columnar structural se-ge: Topics by WorldWideScience.org

Sample records for columnar structural se-ge

Sub-0.1 mu m line fabrication by Focused ion beam and columnar structural Se-Ge resist

CERN Document Server

Lee, H Y; Chung, H B

1998-01-01

As a method to enhance the sensitivity (S) of an inorganic resist for focused-ion-beam (FIB), lithography, sub-0.1 mu m patterning properties of a columnar structural alpha-Se sub 7 sub 5 Ge sub 2 sub 5 resist have been investigated using 30 keV low-energy Ga sup + -FIB exposure and CF sub 4 reactive-ion etching (RIE). development. The Se sub 7 sub 5 Ge sub 2 sub 5 thin films were 60 .deg. and 80 .deg. -obliquely deposited on Si substrate and parts of the films were annealed for several minutes at the glass transition temperature (T sub g =approx 220 .deg. C). Columnar structures with the angles of approximately 40 .deg. and 65 .deg. are observed in 60 .deg. and 80 .deg. -obliquely deposited films, respectively, and they disappear after annealing. Despite the disappearance of the columnar structures, a critical decrease in thickness is not observed. For the FIB exposures with a beam diameter of approx 0.1 mu m and around the threshold dose, the negative-type fine patterns with linewidth of about 0.06 approx 0...
The Ag2Se-HgSe-GeSe2 system and crystal structures of the compounds

International Nuclear Information System (INIS)

Parasyuk, O.V.; Gulay, L.D.; Romanyuk, Ya.E.; Olekseyuk, I.D.; Piskach, L.V.

2003-01-01

The phase diagram of the quasi-ternary Ag 2 Se-HgSe-GeSe 2 system at 298 K was investigated using X-ray phase analysis and metallography. The formation of five intermediate quaternary phases β (Ag ∼7.12-∼6.32 Hg ∼0.44-∼0.82 GeSe 6 ), γ (Ag ∼6.08-∼4.00 Hg ∼0.96-∼2.00 GeSe 6 ), δ (Ag 3.4 Hg 2.3 GeSe 6 ), ε (Ag ∼2.24-∼2.00 Hg ∼2.88-∼3.00 GeSe 6 ) and ∼Ag 1.4 Hg 1.3 GeSe 6 was established. The crystal structure of the β-phase (for the Ag 6.504 Hg 0.912 GeSe 6 composition) was determined using X-ray single crystal diffraction. It crystallizes in a cubic structure (space group F4-bar 3m) with the lattice parameter a=1.09026(4) nm. The crystal structure of the δ-phase (Ag 3.4 Hg 2.3 GeSe 6 ) was determined using X-ray powder diffraction (space group F4-bar 3m, a=1.07767(8) nm). The crystal structure determination of the γ-phase (space group Pmn2 1 ) was performed for the compositions Ag 5.6 Hg 1.2 GeSe 6 , Ag 4.8 Hg 1.6 GeSe 6 and Ag 4 Hg 2 GeSe 6 using X-ray powder diffraction. The crystal structure of the LT-Hg 2 GeSe 4 compound (space group I4-bar , a=0.56786(2), c=1.12579(5) nm) was confirmed by powder diffraction also.
Atomic-scale structure of GeSe2 glass revisited: a continuous or broken network of Ge-(Se1/2)4 tetrahedra?

International Nuclear Information System (INIS)

Petkov, V; Le Messurier, D

2010-01-01

The atomic-scale structure of germanium diselenide (GeSe 2 ) glass has been revisited using a combination of high-energy x-ray diffraction and constrained reverse Monte Carlo simulations. The study shows that the glass structure may be very well described in terms of a continuous network of corner- and edge-sharing Ge-Se 4 tetrahedra. The result is in contrast to other recent studies asserting that the chemical order and, hence, network integrity in GeSe 2 glass are intrinsically broken. It is suggested that more elaborate studies are necessary to resolve the controversy.
Static structure of superionic conducting glass of Ag-Ge-Se system

Energy Technology Data Exchange (ETDEWEB)

Suenaga, R; Nakashima, S; Tahara, S; Takeda, S [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan); Kawakita, Y [Faculty of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan); Kohara, S [Japan Synchrotron Radiation Research Inst., 1-1-1 Kouto, Sayo-cho, Hyogo 679-5198 (Japan)], E-mail: takeda@rc.kyushu-u.ac.jp

2008-02-15

Superionic conducting glasses are the important materials as solid electrolytes. Amorphous Ag-Ge-Se system is well known to exhibit the superionic conducting behavior where silver ions easily migrate into the mixed structure of Ag{sub 2}Se and Ge-Se chalcogenide glass. It will be good material to study how the superionic conducting region distributes in the glassy network, and whether the conducting paths extends to the entire of the material, or the localized and limited area in an isolated region. In this paper, we will present the results of the static structure of Ag-Ge-Se system by high-energy X-ray diffraction measurements.
Origin of structural analogies and differences between the atomic structures of GeSe4 and GeS4 glasses: A first principles study.

Science.gov (United States)

Bouzid, Assil; Le Roux, Sébastien; Ori, Guido; Boero, Mauro; Massobrio, Carlo

2015-07-21

First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe4 and GeS4. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge-Se-Se connections are more frequent than the corresponding Ge-S-S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS4 is rationalized in terms of a higher number of large size rings, accounting for extended Ge-Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge-S bonds when compared to Ge-Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.
Short and medium range structures of 80GeSe2–20Ga2Se3 chalcogenide glasses

Science.gov (United States)

Petracovschi, Elena; Calvez, Laurent; Cormier, Laurent; Le Coq, David; Du, Jincheng

2018-05-01

The short and medium range structures of 80GeSe2–20Ga2Se3 (or Ge23.5Ga11.8Se64.7) chalcogenide glasses have been studied by combining ab initio molecular dynamics (AIMD) simulations and experimental neutron diffraction studies. The structure factor and total correlation function were calculated from glass structures generated from AIMD simulations and compared with neutron diffraction experiments showing reasonable agreement. The atomic structures of ternary chalcogenide glasses were analyzed in detail, and it was found that gallium atoms are four-fold coordinated by selenium (Se) and form [GaSe4] tetrahedra. Germanium atoms on average also have four-fold coordination, among which Se is 3.5 with the remaining being Ge–Ge homo-nuclear bonds. Ga and Ge tetrahedra link together mainly through corner-sharing and some edge-sharing of Se. No homo-nuclear bonds were observed among Ga atoms or between Ge and Ga. In addition, Se–Se homo-nuclear bonds and Se chains with various lengths were observed. A small fraction of Se atom triclusters that bond to three cations of Ge and Ga were also observed, confirming earlier proposals from 77Se solid state nuclear magnetic resonance studies. Furthermore, the electronic structures of ternary chalcogenide glasses were studied in terms of atomic charge and electronic density of states in order to gain insights into the chemical bonding and electronic properties, as well as to provide an explanation of the observed atomic structures in these ternary chalcogenide glasses.
The relationship between structural and optical properties of Se-Ge-As glasses

Science.gov (United States)

Ghayebloo, M.; Rezvani, M.; Tavoosi, M.

2018-05-01

In this study, the structural and optical characterization of bulk Se-Ge-As glasses has been investigated. In this regards, six different Se60Ge40-xAsx (0 ≤ x ≤ 25) glasses were prepared by conventional melt quenching technique in quartz ampoule. The produced samples were characterized using X-ray diffraction (XRD), Raman spectroscopy, differential thermal analysis (DTA), ultraviolet-visible (UV-Vis) and Fourier transform infrared (FTIR) spectroscopy. The fundamental absorption edge for all the glasses was analyzed in terms of the theory proposed by Davis and Mott. According to achieved results, fully amorphous phase can easily form in different Se-Ge-As systems. The thermal and optical characteristic of Se60Ge40-xAsx glasses shows anomalous behavior at 5 mol% of As for the glass transition temperature, transmittance, absorption edge, optical energy gap and Urbach energy. The highest glass transition temperature, transmittance, optical energy gap and Urbach energy properties were achieved in Se60Ge35As5 glass as a result of the highest connectivity of cations and anions in glass network.
Origin of structural analogies and differences between the atomic structures of GeSe{sub 4} and GeS{sub 4} glasses: A first principles study

Energy Technology Data Exchange (ETDEWEB)

Bouzid, Assil; Le Roux, Sébastien; Ori, Guido; Boero, Mauro; Massobrio, Carlo [Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg and CNRS UMR 7504, 23 rue du Loess, BP43, F-67034 Strasbourg Cedex 2 (France)

2015-07-21

First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe{sub 4} and GeS{sub 4}. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge–Se–Se connections are more frequent than the corresponding Ge–S–S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS{sub 4} is rationalized in terms of a higher number of large size rings, accounting for extended Ge–Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge–S bonds when compared to Ge–Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.
The effects of Sn addition on properties and structure in Ge-Se chalcogenide glass

Science.gov (United States)

Fayek, S. A.

2005-01-01

Far infrared transmission spectra of homogeneous compositions in the glassy alloy system Ge 1- xSn xSe 2.5 0⩽ x⩽0.6 have been observed in the spectral range 200-500 cm -1 at room temperature. The infrared absorption spectra show strong bands around 231, 284 and 311 cm -1 which were assigned to GeSe, SeSn, Se-Se. Tin atoms appear to substitute for the germanium atoms in the outrigger sites of Ge(Se 1/2) 4 tetrahedra up to 0.4. For x>0.5, the glasses show a new vibrational band of an isolated F 2 mode of the Ge-centered tetrahedra outside the clusters. A pronounced peculiarity (maximum or minimum) appeared at around the same value of the average coordination number at Z=2.65 for all composition dependence topological phase transition from two-dimensional (2D) layer type to three- dimensional (3D) cross-linked network structures in the glass. It is clear that the theoretical ν-values for Se-Se bond is less than the experimental one and that for Se-Ge is greater than the experimental one. This difference may be due to the existence of more close lying modes which tends to broaden the absorption bands. Quantitative justification of the absorption bands shows that theoretical wave numbers agree with its experimental values for Ge-Se stretching vibration bond.
New quaternary thallium indium germanium selenide TlInGe2Se6: Crystal and electronic structure

Science.gov (United States)

Khyzhun, O. Y.; Parasyuk, O. V.; Tsisar, O. V.; Piskach, L. V.; Myronchuk, G. L.; Levytskyy, V. O.; Babizhetskyy, V. S.

2017-10-01

Crystal structure of a novel quaternary thallium indium germanium selenide TlInGe2Se6 was investigated by means of powder X-ray diffraction method. It was determined that the compound crystallizes in the trigonal space group R3 with the unit cell parameters a = 10.1798(2) Å, c = 9.2872(3) Å. The relationship with similar structures was discussed. The as-synthesized TlInGe2Se6 ingot was tested with X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). In particular, the XPS valence-band and core-level spectra were recorded for initial and Ar+ ion-bombarded surfaces of the sample under consideration. The XPS data allow for statement that the TlInGe2Se6 surface is rigid with respect to Ar+ ion-bombardment. Particularly, Ar+ ion-bombardment (3.0 keV, 5 min duration, ion current density fixed at 14 μA/cm2) did not cause substantial modifications of stoichiometry in topmost surface layers. Furthermore, comparison on a common energy scale of the XES Se Kβ2 and Ge Kβ2 bands and the XPS valence-band spectrum reveals that the principal contributions of the Se 4p and Ge 4p states occur in the upper and central portions of the valence band of TlInGe2Se6, respectively, with also their substantial contributions in other portions of the band. The bandgap energy of TlInGe2Se6 at the level of αg=103 cm-1 is equal to 2.38 eV at room temperature.
Three new chalcohalides, Ba4Ge2PbS8Br2, Ba4Ge2PbSe8Br2 and Ba4Ge2SnS8Br2: Syntheses, crystal structures, band gaps, and electronic structures

International Nuclear Information System (INIS)

Lin, Zuohong; Feng, Kai; Tu, Heng; Kang, Lei; Lin, Zheshuai; Yao, Jiyong; Wu, Yicheng

2014-01-01

Highlights: • Three new chalcohalides: Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have been synthesized. • The MQ 5 Br octahedra and GeQ 4 tetrahedra form a three-dimensional framework with Ba 2+ in the channels. • Band Gaps and electronic structures of the three compounds were studied. - Abstract: Single crystals of three new chalcohalides: Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have been synthesized for the first time. These isostructural compounds crystallize in the orthorhombic space group Pnma. In the structure, the tetra-valent Ge atom is tetrahedrally coordinated with four Q (Q = S, Se) atoms, while the bi-valent M atom (M = Pb, Sn) is coordinated with an obviously distorted octahedron of five Q (Q = S, Se) atoms and one Br atom, showing the stereochemical activity of the ns 2 lone pair electron. The MQ 5 Br (M = Sn, Pb; Q = S, Se) distorted octahedra and the GeQ 4 (Q = S, Se) tetrahedra are connected to each other to form a three-dimensional framework with channels occupied by Ba 2+ cations. Based on UV–vis–NIR spectroscopy measurements and the electronic structure calculations, Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have indirect band gaps of 2.054, 1.952, and 2.066 eV respectively, which are mainly determined by the orbitals from the Ge, M and Q atoms (M = Pb, Sn; Q = S, Se)
Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

Science.gov (United States)

Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.
Specific features of band structure and optical anisotropy of Cu{sub 2}CdGeSe{sub 4} quaternary compounds

Energy Technology Data Exchange (ETDEWEB)

Brik, M.G., E-mail: brik@fi.tartu.ee [College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, PL-42200 Czestochowa (Poland); Parasyuk, O.V. [Department of Chemistry, Eastern European National University, Voli 13, Lutsk 43025 (Ukraine); Myronchuk, G.L. [Department of Physics, Eastern European National University, Voli 13, Lutsk 43025 (Ukraine); Kityk, I.V. [Institute of Materials Science and Engineering, Technical University of Czestochowa, Al. Armii Krajowej 19, 42-200 Czestochowa (Poland)

2014-09-15

Complex theoretical and experimental studies of the band structure and optical functions of a new Cu{sub 2}CdGeSe{sub 4} quaternary crystal are reported. The benchmark band structure calculations were performed using the first-principles methods. As a result, the structural, electronic, optical and elastic properties of Cu{sub 2}CdGeSe{sub 4} were calculated in the general gradient approximation (GGA) and local density approximation (LDA). The calculated dielectric function and optical absorption spectra exhibit some anisotropic behavior. Detailed analysis of the band energy dispersion and effective space charge density helped in establishing the origin of the band structure anisotropy. All calculated properties are compared with the experimental data. An additional comparison with a similar crystal of Cu{sub 2}CdGeSe{sub 4} allowed to reveal the role played by the anions (S or Se) in formation of the optical properties of these two materials. - Highlights: • The structural, electronic, optical properties of Cu{sub 2}CdGeSe{sub 4} were calculated. • Pressure effects on these properties were modeled. • Comparison with a similar compound of Cu{sub 2}CdGeS{sub 4} was performed.
First-principles study of bandgap tuning in Ge1-xPbxSe

Science.gov (United States)

Lohani, Himanshu

2018-03-01

Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.
Structure of amorphous GeSe{sub 9} by neutron diffraction and first-principles molecular dynamics: Impact of trajectory sampling and size effects

Energy Technology Data Exchange (ETDEWEB)

Le Roux, Sébastien; Massobrio, Carlo [Institut de Physique et de Chimie des Matériaux de Strasbourg, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France); Bouzid, Assil [Chaire de Simulation à l’Echelle Atomique (CSEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Kim, Kye Yeop; Han, Seungwu [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Zeidler, Anita; Salmon, Philip S. [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

2016-08-28

The structure of glassy GeSe{sub 9} was investigated by combining neutron diffraction with density-functional-theory-based first-principles molecular dynamics. In the simulations, three different models of N = 260 atoms were prepared by sampling three independent temporal trajectories, and the glass structures were found to be substantially different from those obtained for models in which smaller numbers of atoms or more rapid quench rates were employed. In particular, the overall network structure is based on Se{sub n} chains that are cross-linked by Ge(Se{sub 4}){sub 1/2} tetrahedra, where the latter are predominantly corner as opposed to edge sharing. The occurrence of a substantial proportion of Ge–Se–Se connections does not support a model in which the material is phase separated into Se-rich and GeSe{sub 2}-rich domains. The appearance of a first-sharp diffraction peak in the Bhatia-Thornton concentration-concentration partial structure factor does, however, indicate a non-uniform distribution of the Ge-centered structural motifs on an intermediate length scale.
Investigations on the structure of Pb-Ge-Se glasses

Science.gov (United States)

Kalra, G.; Upadhyay, M.; Sharma, Y.; Abhaya, S.; Murugavel, S.; Amarendra, G.

2016-05-01

Chalcogenide glasses have attracted much attention because of their potential application in various solid state devices. In the present work, we report here the detailed thermal, structural, microstructural studies on PbxGe42-xSe58 with (0 ≤ x ≤ 20) glasses. The influence of Pb content on the glass transition temperature, specific heat, and non-reversing enthalphy is observed and discussed qualitatively The Raman spectroscopic studies on the all the glass compositions are carried out and deconvoluted into different structural units. The positron annihilation life-time spectroscopy (PALS) studies helped to understand the nature of defect states present in the glassy system and its variation with Pb content. The concentration of charged defect centers is found to increase, whereas the open volume defect concentration decreases with Pb content in these glasses.
Investigations on the structure of Pb-Ge-Se glasses

International Nuclear Information System (INIS)

Kalra, G.; Upadhyay, M.; Sharma, Y.; Murugavel, S.; Abhaya, S.; Amarendra, G.

2016-01-01

Chalcogenide glasses have attracted much attention because of their potential application in various solid state devices. In the present work, we report here the detailed thermal, structural, microstructural studies on Pb x Ge 42-x Se 58 with (0 ≤ x ≤ 20) glasses. The influence of Pb content on the glass transition temperature, specific heat, and non-reversing enthalpy is observed and discussed qualitatively The Raman spectroscopic studies on the all the glass compositions are carried out and deconvoluted into different structural units. The positron annihilation life-time spectroscopy (PALS) studies helped to understand the nature of defect states present in the glassy system and its variation with Pb content. The concentration of charged defect centers is found to increase, whereas the open volume defect concentration decreases with Pb content in these glasses.
Study of crystallization kinetics and structural relaxation behavior in phase separated Ag{sub 33}Ge{sub 17}Se{sub 50} glassy alloys

Energy Technology Data Exchange (ETDEWEB)

Kumar, Praveen, E-mail: prafiziks@gmail.com [Semiconductors Laboratory, Department of Physics, GND University, Amritsar 143005 (India); Nanotechnology Research Centre, DAV Institute of Engineering and Technology, Kabir Nagar, Jalandhar 144008 (India); Yannopoulos, S.N. [Foundation for Research and Technology Hellas, Institute of Chemical Engineering and High Temperature Chemical Processes (FORTH/ICE-HT), P.O. Box 1414, GR-26 504, Rio-Patras (Greece); Sathiaraj, T.S. [Department of Physics, University of Botswana, Gaborone (Botswana); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductors Laboratory, Department of Physics, GND University, Amritsar 143005 (India)

2012-07-16

We report on the crystallization processes and structure (crystal phases) of Ag{sub 33}Ge{sub 17}Se{sub 50} glassy alloy using differential scanning calorimetry and x-ray diffraction techniques, respectively. The devitrification that gives rise to the first exothermic peak results in the crystallization of Ag{sub 2}Se and Ag{sub 8}GeSe{sub 6} phases, while the growth of GeSe{sub 2} accompanied by the transformation of Ag{sub 8}GeSe{sub 6} to Ag{sub 2}Se phase occurs during the second crystallization process. Different theoretical models are used to elucidate various kinetic parameters for the crystallization transformation process in this phase separated system. With annealing below the glass transition temperature, an inverse behavior between the variation of the optical gap and the band tailing parameter is observed for the thermally evaporated films. These results are explained as the mixing of different clusters/species in the amorphous state and/or changes caused by structural relaxation of the glassy network for the thermally evaporated films. - Highlights: Black-Right-Pointing-Pointer Phase separation in Ag{sub 33}Ge{sub 17}Se{sub 50} glassy alloy bordering two glass forming regions. Black-Right-Pointing-Pointer Transformation of Ag{sub 8}GeSe{sub 6} {yields} Ag{sub 2}Se along with crystallization GeSe{sub 2} phase. Black-Right-Pointing-Pointer Elucidation of various kinetic parameters for the crystalline transformation. Black-Right-Pointing-Pointer Structural relaxation in thermally evaporated films by optical spectroscopy.
Electronic structure and optical properties of noncentrosymmetric LiGaGe{sub 2}Se{sub 6}, a promising nonlinear optical material

Energy Technology Data Exchange (ETDEWEB)

Lavrentyev, A.A.; Gabrelian, B.V.; Vu, V.T.; Ananchenko, L.N. [Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don (Russian Federation); Isaenko, L.I. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, 2 Pirogova Street, 630090 Novosibirsk (Russian Federation); Yelisseyev, A.; Krinitsin, P.G. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, UA-03142 Kyiv (Ukraine)

2016-11-15

X-ray photoelectron core-level and valence-band spectra are measured for pristine and Ar{sup +} ion-bombarded surfaces of LiGaGe{sub 2}Se{sub 6} single crystal grown by Bridgman-Stockbarger technique. Further, electronic structure of LiGaGe{sub 2}Se{sub 6} is elucidated from both theoretical and experimental viewpoints. Density functional theory (DFT) calculations are made using the augmented plane wave +local orbitals (APW+lo) method to study total and partial densities of states in the LiGaGe{sub 2}Se{sub 6} compound. The present calculations indicate that the principal contributors to the valence band are the Se 4p states: they contribute mainly at the top and in the central portion of the valence band of LiGaGe{sub 2}Se{sub 6}, with also their significant contributions in its lower portion. The Ge 4s and Ge 4p states are among other significant contributors to the valence band of LiGaGe{sub 2}Se{sub 6}, contributing mainly at the bottom and in the central portion, respectively. In addition, the calculations indicate that the bottom of the conduction band is composed mainly from the unoccupied Ge s and Se p states. The present DFT calculations are supported experimentally by comparison on a common energy scale of the X-ray emission bands representing the energy distribution of the 4p states associated with Ga, Ge and Se and the XPS valence-band spectrum of the LiGaGe{sub 2}Se{sub 6} single crystal. The main optical characteristics of the LiGaGe{sub 2}Se{sub 6} compound are elucidated by the first-principles calculations.
Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

Energy Technology Data Exchange (ETDEWEB)

Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

2017-08-14

A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Investigations on the structure of Pb-Ge-Se glasses

Energy Technology Data Exchange (ETDEWEB)

Kalra, G.; Upadhyay, M.; Sharma, Y.; Murugavel, S., E-mail: murug@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi – 110007 (India); Abhaya, S.; Amarendra, G. [Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102 (India)

2016-05-23

Chalcogenide glasses have attracted much attention because of their potential application in various solid state devices. In the present work, we report here the detailed thermal, structural, microstructural studies on Pb{sub x}Ge{sub 42-x}Se{sub 58} with (0 ≤ x ≤ 20) glasses. The influence of Pb content on the glass transition temperature, specific heat, and non-reversing enthalpy is observed and discussed qualitatively The Raman spectroscopic studies on the all the glass compositions are carried out and deconvoluted into different structural units. The positron annihilation life-time spectroscopy (PALS) studies helped to understand the nature of defect states present in the glassy system and its variation with Pb content. The concentration of charged defect centers is found to increase, whereas the open volume defect concentration decreases with Pb content in these glasses.
Third-order nonlinear optical properties of GeSe2-Ga2Se3-PbI2 glasses

International Nuclear Information System (INIS)

Tang Gao; Liu Cunming; Luo Lan; Chen Wei

2010-01-01

The third-order nonlinear optical (NLO) properties of new selenium-based GeSe 2 -Ga 2 Se 3 -PbI 2 glasses have been measured using the optical Kerr effect (OKE) technique, with picosecond and femtosecond laser pulses. The 0.70GeSe 2 -0.15Ga 2 Se 3 -0.15PbI 2 glass has the largest third-order optical nonlinear susceptibility in GeSe 2 -Ga 2 Se 3 -PbI 2 glass system with χ (3) of 5.28x10 12 esu. In addition, the response time of glasses is sub-picosecond, which is predominantly associated with electron cloud. Local structure of the glasses has been identified by using Raman studies, while the origins of the observed nonlinear optical response are discussed. The [Ge(Ga)Se 4 ] tetrahedral and lone-pair electrons from highly polarizable Pb atom in glasses play an important role in enhanced NLO response. These results as well as their good chemical stability indicate that GeSe 2 -Ga 2 Se 3 -PbI 2 glasses are promising materials for photonic applications of third-order nonlinear optical signal processing.
Preparation of special purity Ge - S - I and Ge - Se - I glasses

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

2017-05-01

The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.
Structure and density for As23Se67Ge10 amorphous films

International Nuclear Information System (INIS)

Shchurova, T.N.; Savchenko, N.D.

1999-01-01

The effect of thermal annealing and argon laser irradiation on structure and volume for thin amorphous As 23 Se 67 Ge 10 films deposited by thermal evaporation has been investigated. The short-range structure for the annealed films has been found to be more ordered as compared to the irradiated films. The decrease in film volume under thermal annealing and its increase under laser irradiation have been shown. The changes in film volume have been discussed in the context of non-ergodic model for the amorphous state equilibrium taking into account forces acting from the substrate
On Some Physical Properties of GeSe3-Sb2Se3-ZnSe Thin Films and Their Radiation Response

International Nuclear Information System (INIS)

Hosni, H.M.M.A.

2010-01-01

Thin films of the chalcogenides GeSe 3 , Sb 2 Se 3 , ZnSe, (GeSe 3 )80(Sb 2 Se 3 )20 and (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20, are prepared by thermal evaporation onto glass substrates. The effect of ZnSe incorporation with both GeSe 3 , Sb 2 Se 3 results in amorphous (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 composition as obtained from the X-ray analysis. Electrical measurements reveal a decrease in dc activation energy, ΔEdc, and an increase in ac activation energy, ΔEac, for (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 as compared with (GeSe 3 )80(Sb 2 Se 3 )20. Optical energy gap, Eg, and band tail width, Ee, are estimated in UV/VIS spectral region for fresh and γ-irradiated films, revealing a decrease in Eg and an increase in Ee for ZnSe and (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 compositions, with irradiation dose.
Intermediate-range structure of amorphous GeSe{sub 2} alloy

Energy Technology Data Exchange (ETDEWEB)

Murakami, Y. [Department of Material and Biological Chemistry, Faculty of Science, Yamagata University, Yamagata 990-8560 (Japan)], E-Mail: su105@kdeve.kj.yamagata-u.ac.jp; Usuki, T. [Department of Material and Biological Chemistry, Faculty of Science, Yamagata University, Yamagata 990-8560 (Japan); Sakurai, M. [Institute for Material Research, Tohoku University, Sendai 980-8577 (Japan); Kohara, S. [Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 769-5198 (Japan)

2007-03-25

Neutron and high-energy X-ray diffraction measurements have been carried out at KENS-KEK and SPring-8, in order to investigate detailed structures of amorphous GeSe{sub 2} prepared by the rapid quenching method. Considerable intermediate-range ordering is evident from the presence of a first sharp diffraction peak at low magnetides of the scattering vector. Well-defined first and second peaks are found at around 2.36 and 3.90 A in the pair distribution function g(r). A small shoulder related to the existence of edge-sharing tetrahedral units is observed at a shorter r side of the second peak in g(r). Partial distribution functions, partial structure factors and bond-angle distributions can be obtained by Reverse Monte Carlo simulation. Results suggest that there are homo-polar bonds in tetrahedral structural units, and then the glass network is constructed by not only corner-sharing but also edge-sharing tetrahedra.
Synthesis of GeSe2 Nanobelts Using Thermal Evaporation and Their Photoelectrical Properties

Directory of Open Access Journals (Sweden)

Lijie Zhang

2014-01-01

Full Text Available GeSe2 nanobelts were synthesized via a simple thermal-evaporation process by using gold particles as catalyst and GeSe2 flakes as starting materials. The morphology, crystal structure, and composition were characterized with scanning electron microscopy (SEM, high-resolution transmission electron microscopy (TEM, X-ray diffraction spectroscopy (XRD, X-ray photoelectron spectroscopy (XPS, and energy-dispersive X-ray spectroscopy (EDS. SEM micrographs show that most of GeSe2 nanobelts have distinct segmented structures (wide belt, zigzag belt, and narrow belt. A possible mechanism was proposed for the growth of segmented nanobelts. It is possible that the growth of the segmented nanobelts is dominated by both vapor-liquid-solid and vapor-solid mechanisms. Devices made of single GeSe2 nanobelt have been fabricated and their photoelectrical property has been investigated. Results indicate that these nanobelt devices are potential building blocks for optoelectronic applications.
Columnar structure of reactively sputtered aluminium nitride films

International Nuclear Information System (INIS)

Chen Chisan; Hwang Binghwai; Lu Hongyang; Hsu Tzuchien

2002-01-01

Columnar structure of thin aluminium nitride (AlN) films is examined by x-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The films were deposited on SiO 2 /Si(100) substrate using radiofrequency reactive sputtering method. Strong [0001] preferred orientation is observed by XRD and confirmed by selected area diffraction pattern of TEM. Columnar grains of ∼50-100 nm inclined at an angle of ∼10 deg. to the substrate normal are observed by SEM. As revealed by TEM, each columnar grain is composed of nano-grains of the order of 10 nm and no faceting is observed in the nano-grains and columns. The [0001] preferred orientation results as columnar grains are oriented at various azimuthal angles with their c-axes perpendicular to the substrate surface. A slight tilt of a few tenths of a degree between adjacent nano-grains within a column is also observed. The random azimuthal orientation of columnar grains and small tilt between nano-grains in the films are accommodated by the amorphous phase present in the grain boundaries
Thermoelectric Performance of Na-Doped GeSe

NARCIS (Netherlands)

Shaabani, Laaya; Aminorroaya-Yamini, Sima; Byrnes, Jacob; Akbar Nezhad, Ali; Blake, Graeme R

2017-01-01

Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized
Lattice parameter values and phase transitions for the Cu2Cd1-zMn zGeSe4 and Cu2Cd1-zFe zGeSe4 alloys

International Nuclear Information System (INIS)

Quintero, E.; Tovar, R.; Quintero, M.; Delgado, G.E.; Morocoima, M.; Caldera, D.; Ruiz, J.; Mora, A.E.; Briceno, M.; Fernandez, J.L.

2007-01-01

X-ray powder diffraction measurements and differential thermal analysis (DTA) were made on polycrystalline samples of the Cu 2 Cd 1-z Mn z GeSe 4 and Cu 2 Cd 1-z Fe z GeSe 4 alloy systems. The diffraction patterns were used to show the equilibrium conditions and to derive lattice parameter values. The effect of the annealing temperature and cooling rate to room temperature are discussed. For the Cu 2 Cd 1-z Fe z GeSe 4 system, only two single solid phase fields, the tetragonal stannite α and the wurtz-stannite δ structures were found to occur in the diagram. For the Cu 2 Cd 1-z Mn z GeSe 4 system, in addition to the tetragonal stannite α and the wurtz-stannite δ phases, MnSe was found to exist in the diagram. The DTA experiments showed that the cooling curves for both systems exhibited effects of undercooling
Impact of sulfur content on structural and optical properties of Ge20Se80-xSx chalcogenide glasses thin films

Science.gov (United States)

Dongol, M.; Elhady, A. F.; Ebied, M. S.; Abuelwafa, A. A.

2018-04-01

Chalcogenide system Ge20Se80-xSx (x = 0, 15 and 30%) thin films were prepared by thermal evaporation technique. The amorphous state of the samples was confirmed according to XRD. The structural changes occurring upon replacement Se by S was investigated using Raman spectroscopy. The optical properties of the as-deposited Ge20Se80-xSx thin films have been studied by analysis the transmittance T(λ) measured at room temperature in the wavelength range 200-2500 nm using Swanepoel's method. Urbach energy (Ee) and optical band gap (Eg) were strongly affected by sulfur concentration in the sample. The refractive index evaluated through envelope method was extrapolated by Cauchy dispersion relationship over the whole spectral range. Moreover, the dispersion of refractive index was analyzed in terms of the single-oscillator Wemple-Di Domenico model. The third-order nonlinear susceptibility (χ(3)) and nonlinear refractive index (n2) were calculated and discussed for different Ge20Se80-xSx (x = 0, 15 and 30%).
High temperature XRD of Cu2GeSe3

International Nuclear Information System (INIS)

Premkumar, D. S.; Malar, P.; Chetty, Raju; Mallik, Ramesh Chandra

2015-01-01

The Cu 2 GeSe 3 is prepared by solid state synthesis method. The high temperature XRD has been done at different temperature from 30 °C to 450 °C. The reitveld refinement confirms Cu 2 GeSe 3 phase and orthorhombic crystal structure. The lattice constants are increasing with increase in the temperature and their rate of increase with respect to temperature are used for finding the thermal expansion coefficient. The calculation of the linear and volume coefficient of thermal expansion is done from 30 °C to 400 °C. Decrease in the values of linear expansion coefficients with temperature are observed along a and c axis. Since thermal expansion coefficient is the consequence of the distortion of atoms in the lattice; this can be further used to find the minimum lattice thermal conductivity at given temperature
Processing high-Tc superconductors with GeV heavy ions

International Nuclear Information System (INIS)

Marwick, A.D.; Civale, L.; Krusin-Elbaum, L.; Worthington, T.K.; Holtzberg, F.; Thompson, J.R.; Sun, Y.R.; Kerchner, H.R.

1992-01-01

Irradiation of high-T c superconducting crystals with low doses (10 10 --10 11 ions/cm 2 ) of GeV heavy ions (0.58 GeV Sn-116; 1.0-GeV Au-197) produces a unique microstructure consisting of discrete amorphous columns which are only a few nm in diameter but tens of microns long. It has been found recently that this columnar microstructure causes larger increases in magnetization and critical current at high temperature and high magnetic field than other types of defects in these materials. This can be understood as a consequence of the effective pinning of magnetic vortex lines provided by the columnar defects. Measurements confirm that the pinning is strongest when the magnetic field is aligned with the ion tracks. Differences in the pinning in different materials can be related to differences in their anisotropy, which affects the structure of the vortices and their pinning at columnar defects
Synthesis, crystal structure, and transport properties of Fe substituted rhombohedral skutterudite derivatives Co4−xFexGe6Se6

KAUST Repository

Wei, Kaya

2014-11-01

We report on the synthesis and low temperature transport properties of rhombohedral derivatives of the cubic skutterudite CoSb3, namely Co4-xFexGe6Se6 with x = 0, 1, 1.5. Rietveld refinement and elemental analyses were used to identify the structure and stoichiometry of the compositions. The thermal conductivity was investigated by employing the Debye model with different phonon-scattering parameters. This investigation demonstrates that Fe substitution is feasible in these skutterudite derivatives and can significantly affect the transport properties as compared with Co4Ge6Se6. © 2014 Elsevier B.V. All rights reserved.
Synthesis, crystal structure, and transport properties of Fe substituted rhombohedral skutterudite derivatives Co4−xFexGe6Se6

KAUST Repository

Wei, Kaya; Dong, Yongkwan; Puneet, Pooja; Tritt, Terry M.; Nolas, George S.

2014-01-01

We report on the synthesis and low temperature transport properties of rhombohedral derivatives of the cubic skutterudite CoSb3, namely Co4-xFexGe6Se6 with x = 0, 1, 1.5. Rietveld refinement and elemental analyses were used to identify the structure and stoichiometry of the compositions. The thermal conductivity was investigated by employing the Debye model with different phonon-scattering parameters. This investigation demonstrates that Fe substitution is feasible in these skutterudite derivatives and can significantly affect the transport properties as compared with Co4Ge6Se6. © 2014 Elsevier B.V. All rights reserved.
Structural manifestations of aging in Se-rich glasses

Science.gov (United States)

Dash, S.; Ravindren, S.; Chen, P.; Boolchand, P.

2015-03-01

We examine weakly cross-linked GexSe100-x (0%modulated DSC and Raman scattering experiments. Homogeneity of melts was carefully verified using FT-Raman line profiling. Upon aging at RT for 4 months, we find the width of the glass transition W(x) steadily decreasing from 10C at 7% Ge to 2C for pure Se. The 5-fold reduction of W(x) with a decrease of Ge content is accompanied by a 2-fold increase in the non-reversing enthalpy. Rejuvenation of the aged glasses changes W(x) from 15C at 7% Ge to 7C for pure Se. Tg is found to decrease upon rejuvenation with the difference (Tg(aged)-Tg(rejuv)) showing a maximum near 3% Ge and vanishing for pure Se and 6% of Ge, which are topological thresholds. These results in Se-rich glasses are consistent with aging induced decoupling of Se8 crowns and growth of extended range structural correlations between polymeric Sen chains due to lone pair interactions. At higher x, near 8-10% of Ge, eutectic effects are manifested. Work supported by NSF Grant DMR 08-53957.
Tunnel current through virus particles between columnar structures in mesoporous silicon

Energy Technology Data Exchange (ETDEWEB)

Vashpanov, Yuriy; Jung, Jae-Il; Dal Kwack, Kae [Electrical Engineering and Computer Science Division of Hanyang Institute of Technology, Hanyang University, 17 Haengdang-dong, Seongdong-gu, 133-791 Seoul (Korea, Republic of)

2011-07-15

Earlier we reported on a tunnel charge transport mechanism in mesoporous silicon with columnar structures under adsorption of plant nematode-transmitted polyhedral (NEPO) viruses at room temperature. Additional experiments are performed in this paper to establish that this observed tunnel current is connected to a conduction path through virus particles. The plant NEPO viruses have an orbicular shape with a diameter of around 25-30 nm. This size is matched well to the porous size distribution in manufactured samples. The tunnel charge transport in semiconductor structures was not observed on loading protein macromolecules of smaller sizes. A physical mechanism of the observed phenomena can be interpreted to be the result of a shunting effect through virus particles between the two closely located columnar silicon structures. This effect is likely to result from double points at virus adsorption under the condition of matching of pore and virus sizes. The magnitudes of the tunnel barrier heights depend on the type of loaded plant viruses. The investigated columnar structures of mesoporous silicon can be used for research on the electrical properties of different viruses with corresponding sizes in the range of 20-30 nm. The existence of a tunnel current between columnar structures in mesoporous silicon under virus adsorption can be used as a simple method for their detection in the environment. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Stability of amorphous Ge-As(Sb)-Se films to high-energy electron irradiation

International Nuclear Information System (INIS)

Savchenko, N.D.

1999-01-01

The results of the investigation of high-energy electron (6.5 MeV) irradiation effect on structure, optical, electrical and mechanical properties for thin films obtained by thermal evaporation of Ge-As-Se and Ge-Sb-Se glasses have been presented. The electron-induced changes in film properties versus average coordination number and relative free volume for bulk glasses have been discussed. It has been found that the higher radiation stability is characteristic to the films deposited from the glasses with the lower relative free volume
Crystallographic contribution to the formation of the columnar grain structure in cobalt films

International Nuclear Information System (INIS)

Hara, K.; Itoh, K.; Okamoto, K.; Hashimoto, T.

1996-01-01

In order to clarify the crystallographic contribution to the formation of the columnar grain structure, the geometric and crystallographic alignments of columnar grains in cobalt films were investigated on the basis of magnetic and optical measurements. The films were deposited by sputtering at an incidence angle of 45 on glass substrates heated at 332 K. The film thickness ranged from 20 to 850 nm. Above 50 nm the columnar grains align in the direction parallel to the incidence plane and form a two-degree crystallographic orientation. The packing density of columnar grains decreases with increasing thickness when the thickness exceeds 50 nm. From these results we conclude that the crystal habit appearing on column tops induces the two-degree orientation through geometric selection and aligns the selected columnar grains in the parallel direction. (orig.)
Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

2013-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

Compositional Dependence Of Hardness Of Ge-Sb-Se Glass For Molded Lens Applications

Directory of Open Access Journals (Sweden)

Park J.K.

2015-06-01

Full Text Available Chalcogenide glass in the ternary Ge-Sb-Se system is inherently moldable, thus being considered as a strong candidate material for use in infrared-transmitting lens applications from the viewpoint of thermal and mechanical stability. In an effort to experimentally determine compositional region suitable for the molded lens applications, we evaluate its compositional dependence of hardness. Among the constituent atoms, Ge content turns out to exert a most conspicuous correlation with hardness. This phenomenological behavior is then explained in connection with the structural evolution that Ge brings about.
Effect of Se substitution on the phase change properties of Ge2Sb2Te5

Science.gov (United States)

Shekhawat, Roopali; Rangappa, Ramanna; Gopal, E. S. R.; Ramesh, K.

2018-05-01

Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contrast in electrical resistivity (about 103). The phase change is between amorphous and metastable NaCl structure occurs at about 150°C and not to the stable hexagonal phase which occurs at a high temperature (> 250 °C). In GST, about 50 % of Te substituted by Se (Ge2Sb2Te2.5Se2.5) is found to increase the contrast in electrical resistivity by 7 orders of magnitude (about 4 orders of magnitude higher than GST). The phase transition in Se added GST also found to be between amorphous and the stable hexagonal structure. The threshold voltage at which the Ge2Sb2Te2.5Se2.5 switches to the high conducting state increases to 9V as compared to 2V in GST. Interestingly, the threshold current decrease to 1mA as compared to 1.8mA in GST indicating the Se substitution reduces the power needed for switching between the low and high conducting states. The reduction in power needed for phase change, high contrast in electrical resistivity with high thermal stability makes Ge2Sb2Te2.5Se2.5 as a better candidate for PCRAM.
Lattice parameter values and phase transitions for the Cu{sub 2}Cd{sub 1-z}Mn {sub z}GeSe{sub 4} and Cu{sub 2}Cd{sub 1-z}Fe {sub z}GeSe{sub 4} alloys

Energy Technology Data Exchange (ETDEWEB)

Quintero, E. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Tovar, R. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Quintero, M. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela)]. E-mail: mquinter@ula.ve; Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Morocoima, M. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Caldera, D. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Ruiz, J. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Mora, A.E. [Laboratorio de Analisis Quimico y Estructural de Materiales, Departamento de Fisica, Universidad de Los Andes, Merida 5101 (Venezuela); Briceno, M. [Laboratorio de Analisis Quimico y Estructural de Materiales, Departamento de Fisica, Universidad de Los Andes, Merida 5101 (Venezuela); Fernandez, J.L. [Laboratorio de Analisis Quimico y Estructural de Materiales, Departamento de Fisica, Universidad de Los Andes, Merida 5101 (Venezuela)

2007-04-25

X-ray powder diffraction measurements and differential thermal analysis (DTA) were made on polycrystalline samples of the Cu{sub 2}Cd{sub 1-z}Mn {sub z}GeSe{sub 4} and Cu{sub 2}Cd{sub 1-z}Fe {sub z}GeSe{sub 4} alloy systems. The diffraction patterns were used to show the equilibrium conditions and to derive lattice parameter values. The effect of the annealing temperature and cooling rate to room temperature are discussed. For the Cu{sub 2}Cd{sub 1-z}Fe {sub z}GeSe{sub 4} system, only two single solid phase fields, the tetragonal stannite {alpha} and the wurtz-stannite {delta} structures were found to occur in the diagram. For the Cu{sub 2}Cd{sub 1-z}Mn {sub z}GeSe{sub 4} system, in addition to the tetragonal stannite {alpha} and the wurtz-stannite {delta} phases, MnSe was found to exist in the diagram. The DTA experiments showed that the cooling curves for both systems exhibited effects of undercooling.
Effect of deformation on the valence shell occupancies of {sup 74}Ge, {sup 76}Ge, {sup 76}Se and {sup 78}Se

Energy Technology Data Exchange (ETDEWEB)

Elsharkawy, H.M. [Department of Physics, Faculty of Science, Fayoum University (Egypt); Saleh Yousef, M., E-mail: msyousef12@gmail.com [Department of Physics, Taibah University, Almadinah Almunawwarah (Saudi Arabia); Department of Physics, Cairo University, Giza 12613 (Egypt)

2017-03-15

The set of BCS equations have been solved using both realistic and schematic separable forces to calculate the occupation probability amplitudes for protons and neutrons in the valence shells of {sup 74}Ge, {sup 76}Ge, {sup 76}Se and {sup 78}Se deformed nuclei. A comparison between the calculated occupation probabilities with the experimental measured values is introduced. A big difference is found between the occupation probabilities of protons with the experimental values, while for neutrons the agreement with the experimental values at high deformations is satisfactory.
Thio-, selenido-, and telluridogermanates(III): K/sub 6/Ge/sub 2/S/sub 6/, K/sub 6/Ge/sub 2/Se/sub 6/, and Na/sub 6/Ge/sub 2/Te/sub 6/

Energy Technology Data Exchange (ETDEWEB)

Eisenmann, B; Kieselbach, E; Schaefer, H; Schrod, H [Technische Hochschule Darmstadt (Germany, F.R.). Fachbereich Anorganische Chemie und Kernchemie

1984-09-01

The new compounds K/sub 6/Ge/sub 2/S/sub 6/ and K/sub 6/Ge/sub 2/Se/sub 6/ crystallize in the monoclinic system, space group C2/m (No 12). The compounds are isotypic and form the K/sub 6/Si/sub 2/Te/sub 6/ structure. Na/sub 6/Ge/sub 2/Te/sub 6/ crystallizes in the K/sub 6/Sn/sub 2/Te/sub 6/ structure, monoclinic, space group P2/sub 1//c (No 14). The lattice constants are given.
First-principles study of defect formation in a photovoltaic semiconductor Cu2ZnGeSe4

Science.gov (United States)

Nishihara, Hironori; Maeda, Tsuyoshi; Wada, Takahiro

2018-02-01

The formation energies of neutral Cu, Zn, Ge, and Se vacancies in kesterite-type Cu2ZnGeSe4 were evaluated by first-principles pseudopotential calculations using plane-wave basis functions. The calculations were performed at typical points in Cu-(Zn1/2Ge1/2)-Se and Cu3Se2-ZnSe-GeSe2 pseudoternary phase diagrams for Cu2ZnGeSe4. The results were compared with those for Cu2ZnSnSe4, Cu2ZnGeS4, and Cu2ZnSnS4 calculated using the same version of the CASTEP program code. The results indicate that Cu vacancies are easily formed in Cu2ZnGeSe4 under the Cu-poor condition as in the above compounds and CuInSe2, suggesting that Cu2ZnGeSe4 is also a preferable p-type absorber material for thin-film solar cells. The formation energies of possible antisite defects, such as CuZn and CuGe, and of possible complex defects, such as CuZn+ZnCu, were also calculated and compared within the above materials. The antisite defect of CuZn, which has the smallest formation energy within the possible defects, is concluded to be the most hardly formed in Cu2ZnGeSe4 among the compounds.
Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

Energy Technology Data Exchange (ETDEWEB)

Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

2015-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.
Recent developments of anomalous X-ray scattering for non-crystalline materials with help of reverse Monte Carlo modeling: The example of GeSe{sub 2} glass

Energy Technology Data Exchange (ETDEWEB)

Hosokawa, Shinya [Center for Materials Research Using Third-Generation Synchrotron Facilities, Hiroshima Institute of Technology, Hiroshima 731-5193 (Japan); Physikalische Chemie, Fachbereich Chemie, Philipps Universitaet Marburg, 35032 Marburg (Germany); Pilgrim, Wolf-Christian [Physikalische Chemie, Fachbereich Chemie, Philipps Universitaet Marburg, 35032 Marburg (Germany); Berar, Jean-Francois [Institut Neel, Centre National de la Recherche Scientifique, Universite Joseph Fourier (CNRS/UJF), 38042 Grenoble Cedex 9 (France); Kohara, Shinji [Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), Hyogo 679-5198 (Japan)

2011-11-15

Anomalous X-ray scattering (AXS) experiments on glassy GeSe{sub 2} were carried out at energies close to the Ge and Se K absorption edges in order to explore the atomic structure in the short- and intermediate-ranges. The partial structure factors, S{sub ij}(Q), and the corresponding partial pair-distribution functions, g{sub ij}(r), obtained with help of reverse Monte Carlo (RMC) modeling, are in good agreement with the experimental results from neutron diffraction employing isotopic substitution (NDIS), and with the theoretical data from ab initio molecular dynamics simulation. The prepeak in the total structure factor, S(Q), indicating the existence of intermediate-range order (IRO), does not only result from Ge-Ge atomic correlations, but also contains Ge-Se correlations. From the atomic configuration obtained from RMC modeling, several structural parameters are discussed, such as partial coordination numbers, connections of the Ge(Se{sub 1/2}){sub 4} tetrahedra, and bond angle distributions. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Surfactant-thermal syntheses, structures, and magnetic properties of Mn-Ge-sulfides/selenides

KAUST Repository

Zhang, Guodong

2014-10-06

Although either surfactants or amines have been investigated to direct the crystal growth of metal chalcogenides, the synergic effect of organic amines and surfactants to control the crystal growth has not been explored. In this report, several organic bases (hydrazine monohydrate, ethylenediamine (en), 1,2-propanediamine (1,2-dap), and 1,3-propanediamine (1,3-dap)) have been employed as structure-directing agents (SDAs) to prepare four novel chalcogenides (Mn3Ge2S7(NH3)4 (1), [Mn(en)2(H2O)][Mn(en)2MnGe3Se9] (2), (1,2-dapH)2{[Mn(1,2-dap)2]Ge2Se7} (3), and (1,3-dapH)(puH)MnGeSe4(4) (pu = propyleneurea) under surfactant media (PEG-400). These as-prepared new crystalline materials provide diverse metal coordination geometries, including MnS3N tetrahedra, MnGe2Se7 trimer, and MnGe3Se10 T2 cluster. Compounds 1-3 have been fully characterized by single-crystal X-ray diffraction (XRD), powder XRD, UV-vis spectra, Fourier transform infrared spectroscopy, and thermogravimetric analysis. Moreover, magnetic measurements for compound 1 showed an obvious antiferromagnetic transition at ∼9 K. Our research not only enriches the structural chemistry of the transitional-metal/14/16 chalcogenides but also allows us to better understand the synergic effect of organic amines and surfactants on the crystallization of metal chalcogenides.
Orientation dependent emission properties of columnar quantum dash laser structures

NARCIS (Netherlands)

Hein, S.; Podemski, P.; Sek, G.; Misiewicz, J.; Ridha, P.; Fiore, A.; Patriarche, G.; Höfling, S.; Forchel, A.

2009-01-01

InAs columnar quantum dash (CQDash) structures on (100) InP have been realized by gas source molecular beam epitaxy for stacking numbers of up to 24. Laser devices show low threshold current densities between 0.73 and 3.5 kA/ cm2, dependent on the CQDash orientation within the cavity.
Simulation and observation of line-slip structures in columnar structures of soft spheres

Science.gov (United States)

Winkelmann, J.; Haffner, B.; Weaire, D.; Mughal, A.; Hutzler, S.

2017-07-01

We present the computed phase diagram of columnar structures of soft spheres under pressure, of which the main feature is the appearance and disappearance of line slips, the shearing of adjacent spirals, as pressure is increased. A comparable experimental observation is made on a column of bubbles under forced drainage, clearly exhibiting the expected line slip.
Lattice parameters values and phase diagram for the Cu2Zn1-zFezGeSe4 alloy system

International Nuclear Information System (INIS)

Caldera, D.; Quintero, M.; Morocoima, M.; Quintero, E.; Grima, P.; Marchan, N.; Moreno, E.; Bocaranda, P.; Delgado, G.E.; Mora, A.E.; Briceno, J.M.; Fernandez, J.L.

2008-01-01

X-ray powder diffraction and differential thermal analysis (DTA) measurements were made on polycrystalline samples of the Cu 2 Zn 1-z Fe z GeSe 4 alloy system. The diffraction patterns were used to show the equilibrium conditions and to estimate crystalline parameter values. It was found that, at room temperature, a single phase solid solution with the tetragonal stannite α structure (I4-bar2m) occurs across the whole composition range. The DTA thermograms were used to construct the phase diagram of the Cu 2 Zn 1-z Fe z GeSe 4 alloy system. It was confirmed that the Cu 2 ZnGeSe 4 compound melts incongruently. It was observed that undercooling effects occur for samples with z > 0.9
Homogeneous-inhomogeneous models of Ag x (Ge0.25Se0.75)100-x bulk glasses

International Nuclear Information System (INIS)

Arcondo, B.; Urena, M.A.; Piarristeguy, A.; Pradel, A.; Fontana, M.

2007-01-01

Ge-Se system presents an extensive glass forming composition range even when different metals (Ag, Sb, Bi) are added. In spite that the addition of Ag (up to 30 at%) to Ge-Se does not affect substantially the glass forming tendency, it impacts significantly on the transport properties. (Ge 0.25 Se 0.75 ) 100- x Ag x is a fast ionic conductor with x≥8 at% whereas it is a semiconductor for x 0.25 Se 0.75 ) 100- x Ag x bulk samples. These results appear to sustain this model. However previous structural and thermal studies oppose it. Moessbauer spectrometry on samples (0≤x≤25) containing 0.5 at% of 57 Fe is performed at T≤300 K. The main contribution to the glasses spectra correspond to low spin Fe 2+ in octahedral coordination and high spin Fe 2+ in distorted octahedral environments. The relative population of both sites changes continuously as Ag concentration varies denoting that the change in the transport behavior obeys to a percolation phenomenon. The low temperature results are discussed with the aim to throw light on the controversy about the homogeneity-inhomogeneity of the studied bulk glasses
Columnar Self-Assembly of Electron-Deficient Dendronized Bay-Annulated Perylene Bisimides.

Science.gov (United States)

Gupta, Ravindra Kumar; Shankar Rao, Doddamane S; Prasad, S Krishna; Achalkumar, Ammathnadu S

2018-03-07

Three new heteroatom bay-annulated perylene bisimides (PBIs) have been synthesized by microwave-assisted synthesis in excellent yield. N-annulated and S-annulated perylene bisimides exhibited columnar hexagonal phase, whereas Se-annulated perylene bisimide exhibited low temperature columnar oblique phase in addition to the high temperature columnar hexagonal phase. The cup shaped bay-annulated PBIs pack into columns with enhanced intermolecular interactions. In comparison to PBI, these molecules exhibited lower melting and clearing temperature, with good solubility. A small red shift in the absorption was seen in the case of N-annulated PBI, whereas S- and Se-annulated PBIs exhibited blue-shifted absorption spectra. Bay-annulation increased the HOMO and LUMO levels of the N-annulated perylene bisimide, whereas a slight increase in the LUMO level and a decrease in the HOMO levels were observed in the case of S- and Se-annulated perylene bisimides, in comparison to the simple perylene bisimide. The band gaps of PBI and PBI-N were almost same, whereas an increase in the band gaps were observed in the case of S- and Se-annulated PBIs. The tendency to freeze in the ordered glassy columnar phase for PBI-N and PBI-S will help to overcome the charge traps due to crystallization, which are detrimental to one-dimensional charge carrier mobility. These solution processable electron deficient columnar semiconductors possessing good thermal stability may form an easily accessible promising class of n-type materials. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
First-principles study on the electronic, optical, and transport properties of monolayer α - and β -GeSe

Science.gov (United States)

Xu, Yuanfeng; Zhang, Hao; Shao, Hezhu; Ni, Gang; Li, Jing; Lu, Hongliang; Zhang, Rongjun; Peng, Bo; Zhu, Yongyuan; Zhu, Heyuan; Soukoulis, Costas M.

2017-12-01

The extraordinary properties and the novel applications of black phosphorene induce the research interest in the monolayer group-IV monochalcogenides. Here using first-principles calculations, we systematically investigate the electronic, transport, and optical properties of monolayer α - and β -GeSe, revealing a direct band gap of 1.61 eV for monolayer α -GeSe and an indirect band gap of 2.47 eV for monolayer β -GeSe. For monolayer β -GeSe, the electronic/hole transport is anisotropic, with an extremely high electron mobility of 2.93 ×104cm2/Vs along the armchair direction, comparable to that of black phosphorene. Furthermore, for β -GeSe, robust band gaps nearly independent of the applied tensile strain along the armchair direction are observed. Both monolayer α - and β -GeSe exhibit anisotropic optical absorption in the visible spectrum.
Disorder in Ag{sub 7}GeSe{sub 5}I, a superionic conductor: temperature-dependent anharmonic structural study

Energy Technology Data Exchange (ETDEWEB)

Albert, S.; Pradel, A.; Ribes, M. [CNRS Montpellier Univ., 34 (France). Inst. Charles Gerhardt Montpellier; Pillet, S.; Lecomte, C. [CNRS Nancy Univ., 54 - Vandoeuvre-les-Nancy (France). Lab. de Cristallographie et de Modelisation des Materiaux Mineraux et Biologiques

2008-02-15

A temperature-dependent structural investigation of the substituted argyrodite Ag{sub 7}GeSe{sub 5}I has been carried out on a single crystal from 15 to 475 K, in steps of 50 K, and correlated to its conductivity properties. The argyrodite crystallizes in a cubic cell with the F anti 43m space group. The crystal structure exhibits high static and dynamic disorder which has been efficiently accounted for using a combination of (i) Gram- Charlier development of the Debye-Waller factors for iodine and silver, and (ii) a split-atom model for Ag{sup +} ions. An increased delocalization of the mobile d{sup 10} Ag{sup +} cations with temperature has been clearly shown by the inspection of the joint probability-density functions; the corresponding diffusion pathways have been determined. (orig.)
Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

Directory of Open Access Journals (Sweden)

Bouhafs B.

2012-06-01

Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.
Mean-coordination number dependence of the fragility in Ge-Se-In glass-forming liquids

International Nuclear Information System (INIS)

Saffarini, G.; Saiter, A.; Garda, M.R.; Saiter, J.M.

2007-01-01

Differential scanning calorimetry measurements have been performed on elemental Se as well as on Ge x Se 94- x In 6 (x=4, 8, and 11 at%) and on Ge y Se 88- y In 12 (y=5, 7, and 9 at%) chalcogenide glasses. From the cooling rate dependence of the fictive temperature, the apparent activation energies, Δh*, and the fragility indices, m, as defined in the strong-fragile glass-forming liquid concept, are determined. It is found that, in Ge-Se-In system, there is an evolution from strong (m=67) to fragile (m=116) glass-forming liquids. The dependence of 'm' on the mean-coordination number, Z, is also obtained. This dependence is rationalized by assuming that, in this glassy alloy system, there is a tendency for the formation of In 2 Se 3 clusters
Hierarchical columnar silicon anode structures for high energy density lithium sulfur batteries

Science.gov (United States)

Piwko, Markus; Kuntze, Thomas; Winkler, Sebastian; Straach, Steffen; Härtel, Paul; Althues, Holger; Kaskel, Stefan

2017-05-01

Silicon is a promising anode material for next generation lithium secondary batteries. To significantly increase the energy density of state of the art batteries with silicon, new concepts have to be developed and electrode structuring will become a key technology. Structuring is essential to reduce the macroscopic and microscopic electrode deformation, caused by the volume change during cycling. We report pulsed laser structuring for the generation of hierarchical columnar silicon films with outstanding high areal capacities up to 7.5 mAh cm-2 and good capacity retention. Unstructured columnar electrodes form a micron-sized block structure during the first cycle to compensate the volume expansion leading to macroscopic electrode deformation. At increased silicon loading, without additional structuring, pronounced distortion and the formation of cracks through the current collector causes cell failure. Pulsed laser ablation instead is demonstrated to avoid macroscopic electrode deformation by initial formation of the block structure. A full cell with lithiated silicon versus a carbon-sulfur cathode is assembled with only 15% overbalanced anode and low electrolyte amount (8 μl mgsulfur-1). While the capacity retention over 50 cycles is identical to a cell with high excess lithium anode, the volumetric energy density could be increased by 30%.
Enhanced columnar structure in CsI layer by substrate patterning

Energy Technology Data Exchange (ETDEWEB)

Jing, T.; Cho, G.; Drewery, J.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D. [Lawrence Berkeley Lab., CA (United States); Fujieda, I. [Xerox Palo Alto Research Center, CA (United States)

1991-10-01

Columnar structure in evaporated CsI layers can be controlled by patterning substrates as well as varying evaporation conditions. Mesh-patterned substrates with various dimensions were created by spin-coating polyimide on glass or amorphous silicon substrates and defining patterns with standard photolithography technique. CsI(Tl) layers 200--1000 {mu}m were evaporated. Scintillation properties of these evaporated layers, such as light yield and speed, were equivalent to those of the source materials. Spatial resolution of X-ray detectors consisting of these layers and a linear array of X-ray detectors consisting of these layers and a linear array of Si photodiodes was evaluated by exposing them to a 25{mu}m narrow beam of X-ray. The results obtained with 200{mu}m thick CsI layers coupled to a linear photodiode array with 20 dots/mm resolution showed that the spatial resolution of CsI(Tl) evaporated on patterned substrates was about 75 {mu}m FWHM, whereas that on CsI(Tl) on flat substrates was about 230 {mu}m FWHM. Micrographs taken by SEM revealed that these layers retained the well-defined columnar structure originating from substrate patterns. Adhesion and light transmission of CsI(Tl) were also improved by patterning the substrate.

High-energy γ-irradiation effect on physical ageing in Ge-Se glasses

International Nuclear Information System (INIS)

Golovchak, R.; Kozdras, A.; Kozyukhin, S.; Shpotyuk, O.

2009-01-01

Effect of Co 60 γ-irradiation on physical ageing in binary Ge x Se 100-x glasses (5 ≤ x ≤ 27) is studied using conventional differential scanning calorimetry method. It is shown, that high-energy irradiation leads to additional increase in the glass transition temperature and endothermic peak area near the glass transition region over the one induced by isochronal storage of these glasses at normal conditions. This γ-induced physical ageing is shown to be well-pronounced in Se-rich glasses (x < 20), while only negligible changes are recorded for glasses of 20 ≤ x ≤ 27 compositions. The effect under consideration is supposed to be associated with γ-activated structural relaxation of the glass network towards thermodynamic equilibrium of supercooled liquid.
High-energy {gamma}-irradiation effect on physical ageing in Ge-Se glasses

Energy Technology Data Exchange (ETDEWEB)

Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202 Stryjska Str., Lviv, UA-79031 (Ukraine); Kozdras, A. [Department of Physics of Opole University of Technology, 75 Ozimska Str., Opole, PL-45370 (Poland); Department of Economy of Academy of Management and Administration in Opole, 18 Niedzialkowski Str., Opole, PL-45085 (Poland); Kozyukhin, S. [Institute of General and Inorganic Chemistry of RAS, Leninsky Pr. 31, Moscow 199991 (Russian Federation); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202 Stryjska Str., Lviv, UA-79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa, PL-42201 (Poland)], E-mail: shpotyuk@novas.lviv.ua

2009-09-01

Effect of Co{sup 60} {gamma}-irradiation on physical ageing in binary Ge{sub x}Se{sub 100-x} glasses (5 {<=} x {<=} 27) is studied using conventional differential scanning calorimetry method. It is shown, that high-energy irradiation leads to additional increase in the glass transition temperature and endothermic peak area near the glass transition region over the one induced by isochronal storage of these glasses at normal conditions. This {gamma}-induced physical ageing is shown to be well-pronounced in Se-rich glasses (x < 20), while only negligible changes are recorded for glasses of 20 {<=} x {<=} 27 compositions. The effect under consideration is supposed to be associated with {gamma}-activated structural relaxation of the glass network towards thermodynamic equilibrium of supercooled liquid.
Lattice parameters values and phase diagram for the Cu{sub 2}Zn{sub 1−z}Mn{sub z}GeSe{sub 4} alloy system

Energy Technology Data Exchange (ETDEWEB)

Caldera, D. [Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101 (Venezuela, Bolivarian Republic of); Quintero, M., E-mail: mquinter@ula.ve [Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101 (Venezuela, Bolivarian Republic of); Morocoima, M.; Moreno, E.; Quintero, E.; Grima-Gallardo, P.; Bocaranda, P. [Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101 (Venezuela, Bolivarian Republic of); Henao, J.A.; Macías, M.A. [Grupo de Investigación en Química Estructural (GIQUE), Facultad de Ciencias, Escuela de Química, Universidad Industrial de Santander, Apartado aéreo 678, Bucaramanga (Colombia); Briceño, J.M.; Mora, A.E. [Laboratorio de Análisis Químico y Estructura de Materiales, Departamento de Física, Universidad de Los Andes, Mérida 5101 (Venezuela, Bolivarian Republic of)

2014-11-25

Highlights: • The samples were annealed at 500 °C for 1 month. • Samples in the ranges 0 < z < 0.375 had the tetragonal stannite α structure (I4{sup ¯}2m). • For 0.725 < z ⩽ 1 the wurtz–stannite δ structure (Pmn2{sub 1}). • Undercooling effects occur for samples in the range 0.725 < z < 0.925. - Abstract: The T(z) phase diagram of the Cu{sub 2}Zn{sub 1−z}Mn{sub z}GeSe{sub 4} alloy system is obtained from X-ray diffraction and differential thermal analysis DTA. At room temperature, the X-ray diffraction data showed that samples in the ranges 0 < z < 0.375 had the tetragonal stannite α structure (I4{sup ¯}2m), while for 0.725 < z ⩽ 1 the wurtz–stannite δ structure (Pmn2{sub 1}). The α and δ fields are separated by a relative wide three-phase field (α + δ + MnSe{sub 2}). The DTA thermograms were used to construct the phase diagram of the Cu{sub 2}Zn{sub 1−z}Mn{sub z}GeSe{sub 4} alloy system. It was confirmed that the Cu{sub 2}ZnGeSe{sub 4} and Cu{sub 2}MnGeSe{sub 4} compounds melt incongruently. It was observed that undercooling effects occur for samples in the range 0.725 < z < 0.925.
First-principles study on the gas sensing property of the Ge, As, and Br doped PtSe2

Science.gov (United States)

Zhang, Jing; Yang, Gui; Tian, Junlong; Ma, Dongwei; Wang, Yuanxu

2018-03-01

Based on first-principles calculations, the adsorption behaviors of H2, O2, CO, CO2, NH3, NO, and NO2 molecules on the Ge-, As- and Br-doped PtSe2 monolayers are theoretically investigated. The results indicate that it is viable for the dopant atoms to be filled into the Se vacancies under Pt-rich conditions. Ge and As act as p-type dopants, while Br acts as n-type dopant. For the adsorption of molecules, the geometrical structures, adsorption energies, charge transfers and the electronic and magnetic properties of the most stable configurations are presented and discussed. It is found that the Ge-doped PtSe2 monolayers exhibit greatly enhanced sensitivity toward O2, CO, NH3, NO and NO2 molecules and the As-doped PtSe2 monolayers are more sensitive toward O2, NH3, NO and NO2 molecules than the pristine ones. This is evident from large adsorption energies, charge transfers, and obvious changes of the electronic states due to the molecule adsorption. However, Br doping cannot enhance the sensing sensitivity of the PtSe2 monolayer. The possible reason is that when substituting for the Se atom, the doped Br with more 4p electrons and less empty orbitals are already chemically saturated by the two of the three neighboring Pt atoms, and thus lose the ability of charge exchange with the adsorbed molecules. On the contrary, the Ge and As as p-type dopants have sizable empty 4p orbitals near the Fermi level to exchange the electrons with the adsorbed molecules, and thus form strong bonds with them.
Columnar recombination for X-ray generated electron-holes in amorphous selenium and its significance in a-Se x-ray detectors

International Nuclear Information System (INIS)

Bubon, O.; Jandieri, K.; Baranovskii, S. D.; Kasap, S. O.; Reznik, A.

2016-01-01

Although amorphous selenium (a-Se) has a long and successful history of application in optical and X-ray imaging, some of its fundamental properties are still puzzling. In particularly, the mechanism of carrier recombination following x-ray excitation and electric field and temperature dependences of the electron-hole pair creation energy (W_e_h_p) remain unclear. Using the combination of X-ray photocurrent and pulse height spectroscopy measurements, we measure W_e_h_p in a wide range of temperatures (218–320 K) and electric fields (10–100 V/µm) and show that the conventional columnar recombination model which assumes Langevin recombination within a column (a primary electron track) fails to explain experimental results in a wide range of electric fields and temperatures. The reason for the failure of the conventional model is revealed in this work, and the theory of the columnar recombination is modified to include the saturation of the recombination rate at high electric field in order to account for the experimental results in the entire range of fields and temperatures.
$\\beta$- decay of the N=Z, rp-process waiting points: $^{64}$Ge, $^{68}$Se and the N=Z+2: $^{66}$Ge, $^{70}$Se for accurate stellar weak-decay rates

CERN Multimedia

The contribution of electron capture to weak-decay rates has been neglected in model calculations of Type I X-ray bursts so far. Nucleosynthesis in these astrophysical events eventually proceeds through the rp-process near the proton drip-line. In particular, several N=Z nuclei such as $^{64}$Ge and $^{68}$Se act as waiting points in the nuclear flow due to the low S${_P}$ values of their Z+1 neighbours. Recent theoretical calculations have shown that, in these high density ($\\thicksim10^{6}$ g/cm$^3$) and high temperature (1 - 2 GK) scenarios, continuum electron capture rates might play an important role, in particular for species at and around these waiting point nuclei. This proposal is aimed at the study of the $\\beta^{+}$/EC-decay of the waiting point nuclei $^{64}$Ge, $^{68}$Se and their N=Z+2 second neighbours $^{66}$Ge and $^{70}$Se with the Total Absorption Spectroscopy method. This will allow for a detailed analysis of their contribution to the EC-decay rates in X-Ray burst explosions. The proposed ...
Preparation and investigation of GaxGe25As15Se60-x (x = 1 ÷ 5) glasses

Science.gov (United States)

Shiryaev, V. S.; Karaksina, E. V.; Velmuzhov, A. P.; Sukhanov, M. V.; Kotereva, T. V.; Plekhovich, A. D.; Churbanov, M. F.; Filatov, A. I.

2017-05-01

Chalcogenide glasses of GaxGe25As15Se60-x (x = 0; 1; 2; 3; 4; 5) compositions are prepared; their transmission range, optical band gap energy, thermal properties and stability against crystallization are studied. It is shown that these glasses have a high transparency in the mid-IR region (from 0.8 to 15 μm), a high glass transition temperature (≥320 °C) and a low tendency to crystallize. The optical band gap energy of GaxGe25As15Se60-x (x = 0; 1; 2; 3; 4; 5) glasses decreases from 1.68 to 1.43 eV as the gallium content increases and the selenium decreases. Their glass network, according to IR spectroscopy data, consists of Ge(Se1/2)4 tetrahedrons and AsSe3/2 pyramids. The Ga2Ge25As15Se58 and Ga3Ge25As15Se57 glasses have highest stability against crystallization. The content of hydrogen and oxygen impurities in the purest glass samples, fabricated using a combination of chemical distillation purification method and vapor transport reaction technique, does not exceed 0.06 ppm (wt) and 0.5 ppm (wt), respectively.
Simulation of the as-cast structure of Al-4.0wt.%Cu ingots with a 5-phase mixed columnar-equiaxed solidification model

International Nuclear Information System (INIS)

Wu, M; Ahmadein, M; Kharicha, A; Ludwig, A; Li, J H; Schumacher, P

2012-01-01

Empirical knowledge about the formation of the as-cast structure, mostly obtained before 1980s, has revealed two critical issues: one is the origin of the equiaxed crystals; one is the competing growth of the columnar and equiaxed structures, and the columnar-to-equiaxed transition (CET). Unfortunately, the application of empirical knowledge to predict and control the as-cast structure was very limited, as the flow and crystal transport were not considered. Therefore, a 5-phase mixed columnar-equiaxed solidification model was recently proposed by the current authors based on modeling the multiphase transport phenomena. The motivation of the recent work is to determine and evaluate the necessary modeling parameters, and to validate the mixed columnar-equiaxed solidification model by comparison with laboratory castings. In this regard an experimental method was recommended for in-situ determination of the nucleation parameters. Additionally, some classical experiments of the Al-Cu ingots were conducted and the as-cast structural information including distinct columnar and equiaxed zones, macrosegregation, and grain size distribution were analysed. The final simulation results exhibited good agreement with experiments in the case of high pouring temperature, whereas disagreement in the case of low pouring temperature. The reasons for the disagreement are discussed.
Simulation of the as-cast structure of Al-4.0wt.%Cu ingots with a 5-phase mixed columnar-equiaxed solidification model

Science.gov (United States)

Wu, M.; Ahmadein, M.; Kharicha, A.; Ludwig, A.; Li, J. H.; Schumacher, P.

2012-07-01

Empirical knowledge about the formation of the as-cast structure, mostly obtained before 1980s, has revealed two critical issues: one is the origin of the equiaxed crystals; one is the competing growth of the columnar and equiaxed structures, and the columnar-to-equiaxed transition (CET). Unfortunately, the application of empirical knowledge to predict and control the as-cast structure was very limited, as the flow and crystal transport were not considered. Therefore, a 5-phase mixed columnar-equiaxed solidification model was recently proposed by the current authors based on modeling the multiphase transport phenomena. The motivation of the recent work is to determine and evaluate the necessary modeling parameters, and to validate the mixed columnar-equiaxed solidification model by comparison with laboratory castings. In this regard an experimental method was recommended for in-situ determination of the nucleation parameters. Additionally, some classical experiments of the Al-Cu ingots were conducted and the as-cast structural information including distinct columnar and equiaxed zones, macrosegregation, and grain size distribution were analysed. The final simulation results exhibited good agreement with experiments in the case of high pouring temperature, whereas disagreement in the case of low pouring temperature. The reasons for the disagreement are discussed.
Formation of {1 0 0} textured columnar grain structure in a non-oriented electrical steel by phase transformation

Energy Technology Data Exchange (ETDEWEB)

Xie, Li; Yang, Ping, E-mail: yangp@mater.ustb.edu.cn; Zhang, Ning; Zong, Cui; Xia, Dongsheng; Mao, Weimin

2014-04-01

This study confirms the effect of anisotropic strain energy on the formation of {1 0 0} textured columnar grain structure induced by temperature gradient during γ to α phase transformation in pure hydrogen atmosphere. Results indicate that high temperature gradient in pure hydrogen atmosphere induces a significant strain energy difference across grain boundaries during γ to α phase transformation, leading to the formation of {1 0 0} texture with columnar grains. Given its simplicity in processing and its ability to obtain good texture-related magnetic properties, the proposed approach is helpful to the development of new types of non-oriented electrical steel. - Highlights: • A strong {1 0 0} texture with columnar grains was obtained. • Good texture and magnetic properties are attributed to the anisotropic strain energy. • The anisotropy in elastic strain energy was induced by the temperature gradient. • The phase transformation rate affects columnar grain morphology.
Photoacoustic spectroscopy of thin films of As2S3, As2Se3 and GeSe2

Indian Academy of Sciences (India)

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As2S3, As2Se3 and GeSe2 exhibit a wide variety of photo-induced phenomena that enable them to be used as optical ...
Application of the generator coordinate method to neutron-rich Se and Ge isotopes

Directory of Open Access Journals (Sweden)

Higashiyama Koji

2014-03-01

Full Text Available The quantum-number projected generator coordinate method (GCM is applied to the neutron-rich Se and Ge isotopes, where the monopole and quadrupole pairing plus quadrupole-quadrupole interaction is employed as an effective interaction. The energy spectra obtained by the GCM are compared to both the shell model results and the experimental data. The GCM reproduces well the energy levels of high-spin states as well as the low-lying states. The structure of the low-lying collective states is analyzed through the GCM wave functions.
Multilayer As{sub 2}Se{sub 3}/GeS{sub 2} quarter wave structures for photonic applications

Energy Technology Data Exchange (ETDEWEB)

Todorov, R; Tasseva, J; Babeva, Tz; Petkov, K, E-mail: rossen@clf.bas.b [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl.109, 1113 Sofia (Bulgaria)

2010-12-22

The optical properties of single layers from As{sub 2}Se{sub 3} and GeS{sub 2}, double-layered stack and quarter-wave multilayer structure consisting of alternating layers from both materials are investigated. For modelling of multilayer coating the thickness dependence of the refractive index of single coatings from both materials is studied. The particularities and scope of application of different spectrophotometric methods for calculation of optical parameters of thin chalcogenide layers are discussed for film thickness, d, in the range {lambda}/25-1.5{lambda} ({lambda} being the operating wavelength). Having acquired the knowledge of optical parameters (refractive index, n, and extinction coefficient, k) of the single layers, we designed and produced a one-dimensional photonic crystal with fundamental reflection band at {lambda} = 850 nm. It was shown that the photoinduced changes of the refractive index of thin chalcogenide films can be used for enhancement of the optical contrast of both materials.
Lattice parameters values and phase diagram for the Cu{sub 2}Zn{sub 1-z}Fe{sub z}GeSe{sub 4} alloy system

Energy Technology Data Exchange (ETDEWEB)

Caldera, D. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Quintero, M. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela)], E-mail: mquinter@ula.ve; Morocoima, M.; Quintero, E.; Grima, P.; Marchan, N.; Moreno, E.; Bocaranda, P. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Mora, A.E.; Briceno, J.M.; Fernandez, J.L. [Laboratorio de Analisis Quimico y Estructura de Materiales, Departamento de Fisica, Universidad de Los Andes, Merida 5101 (Venezuela)

2008-06-12

X-ray powder diffraction and differential thermal analysis (DTA) measurements were made on polycrystalline samples of the Cu{sub 2}Zn{sub 1-z}Fe{sub z}GeSe{sub 4} alloy system. The diffraction patterns were used to show the equilibrium conditions and to estimate crystalline parameter values. It was found that, at room temperature, a single phase solid solution with the tetragonal stannite {alpha} structure (I4-bar2m) occurs across the whole composition range. The DTA thermograms were used to construct the phase diagram of the Cu{sub 2}Zn{sub 1-z}Fe{sub z}GeSe{sub 4} alloy system. It was confirmed that the Cu{sub 2}ZnGeSe{sub 4} compound melts incongruently. It was observed that undercooling effects occur for samples with z > 0.9.
Sintering and microstructure evolution of columnar nickel-based superalloy sheets prepared by EB-PVD

International Nuclear Information System (INIS)

Chen, S.; Qu, S.J.; Liang, J.; Han, J.C.

2010-01-01

Research highlights: → EB-PVD technology is commonly used to deposit thermal barrier coatings (TBCs) and columnar structure is commonly seen in EB-PVD condensates. The unique columnar structure can provide outstanding resistance against thermal shock and mechanical strains for TBCs. However, a number of researchers have found that the columnar structure can affect the mechanical properties of EB-PVD alloy thin sheet significantly. As yet, works on how to reduce this kind of effects are seldom done. In the present article, we tried to reveal the sintering effects on microstructure evolution and mechanical properties of columnar Ni-based superalloy sheet. The results suggests that after sintering, the columnar structure degrades. Degradation depends on sintering temperature and time. Both the ultimate tensile strength and the elongation percentage are effectively improved after sintering. - Abstract: A ∼0.15 mm-thick columnar nickel-based superalloy sheet was obtained by electron beam physical vapor deposition (EB-PVD). The as-deposited alloy sheet was sintered at different conditions. The microstructure of the specimens before and after sintering was characterized by using scanning electron microscopy. An X'Pert texture facility was used to determine the crystallographic orientation of the as-deposited alloy sheet. The phase transformation was investigated by X-ray diffraction. Tensile tests were conducted at room temperature on as-deposited and sintered specimens. The results show that the as-deposited sheet is composed of typical columnar structures. After sintering, however, the columnar structure degrades. The degradation depends on sintering temperature and time. Both the ultimate tensile strength and the elongation percentage are effectively improved after sintering.
Two-dimensional n -InSe/p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

Science.gov (United States)

Xia, Cong-xin; Du, Juan; Huang, Xiao-wei; Xiao, Wen-bo; Xiong, Wen-qi; Wang, Tian-xing; Wei, Zhong-ming; Jia, Yu; Shi, Jun-jie; Li, Jing-bo

2018-03-01

Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n -InSe/p -GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (˜105 ), broad spectrum width, and excellent carrier mobility (˜103c m2V-1s-1 ). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n -InSe/p -GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.
Ensemble averaged multi-phase Eulerian model for columnar/equiaxed solidification of a binary alloy: II. Simulation of the columnar-to-equiaxed transition (CET)

International Nuclear Information System (INIS)

Ciobanas, A I; Fautrelle, Y

2007-01-01

A new multi-phase Eulerian model for the columnar and equiaxed dendritic solidification has been developed. In this paper we first focus on the numerical simulation of quasi-steady solidification experiments in order to obtain corresponding CET maps. We have identified three main zones on the CET map: the pure columnar, the pure equiaxed zone and finally the mixed columnar+equiaxed zone. The mixed c/e zone was further quantified by means of a columnar fraction ε c which quantifies in a rigorous way the two coexisting structures. Since it intrinsically includes the solutal and the mechanical blocking effects, the new ensemble model unifies the semi-empirical Hunt's approach (pure mechanical blocking mechanism) and the Martorano et al approach (pure solutal blocking mechanism). Secondly the present model was used to simulate unidirectional solidification experiments. It was found that the columnar front evolved in a quasi-steady state until a time very close to the critical CET moment. It is also found that the equiaxed nucleation undercooling is close to the maximum columnar dendrite tip undercooling and that the CET is virtually independent of the equiaxed zone ahead of the columnar front. If the equiaxed zone is not taken into account it is observed that the columnar front velocity exhibits a sudden increase at the beginning of the solidification followed by a quasi-plateau corresponding to a quasi-state at the columnar tips and finally, above a critical time, an oscillatory evolution. The beginning of the oscillatory evolution of the columnar front was well correlated with the CET position measured in the experiments. We also find that this oscillatory evolution of the columnar front is very favourable for the fragmentation of the columnar dendrites and thus for the CET. In this respect, it seems that the unsteady regime of the columnar front with respect to the local cooling conditions represents the main cause for the CET phenomena, at least for the non
Determination of core level line widths in XPS of GeS and GeSe

International Nuclear Information System (INIS)

Viljoen, P.E.

1981-01-01

Measured X-ray photoelectron spectra are broadened owing to several factors. They can be regarded as the sums of the instrument response functions and the finite source widths. By measuring the response function and deconvoluting the measured peak, the form of the measured peak, the instrument function and the deconvoluted line were determined. The former two seem to have a Gauss and the latter a Lorentz form. The X-ray source is known to have a Lorentz form. A simple method, using the shapes of all these lines, is proposed to determine the line width. Applied to GeS and GeSe lines it gives values that agree quite well with other determinations. Strictly speaking, the method is only applicable to our or other similar spectrometers, but it can be generally applied if the line shapes are known or can be determined [af
The sublimation kinetics of GeSe single crystals

Science.gov (United States)

Irene, E. A.; Wiedemeier, H.

1975-01-01

The sublimation kinetics of (001) oriented GeSe single crystal platelets was studied by high-temperature mass spectroscopy, quantitative vacuum microbalance techniques, and hot stage optical microscopy. For a mean experimental temperature of 563 K, the activation enthalpy and entropy are found to equal 32.3 kcal/mole and 19.1 eu, respectively. The vaporization coefficient is less than unity for the range of test temperatures, and decreases with increasing temperature. The combined experimental data are correlated by means of a multistep surface adsorption mechanism.
The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Directory of Open Access Journals (Sweden)

Georgios S. E. Antipas

2015-01-01

Full Text Available The atomic environments of two chalcogenide glasses, with compositions GeSe4In10 and GeSe4In15, were studied via Reverse Monte Carlo and Density Functional Theory. Indium content demoted Ge–Se bonding in favor of Se-In while the contribution of Se–Se in the first coordination shell order was faint. Upon transition to the richer In glass, there was formation of rich Ge-centered clusters at radial distances further than 4 Å from the RMC box center, which was taken to signify a reduction of Ge–Se interactions. Cluster coordination by Se promoted stability while, very conclusively, In coordination lowered cluster stability by intervening in the Ge–Se and Se–Se networks.

CH 3 NH 3 PbI 3 /GeSe bilayer heterojunction solar cell with high performance

Science.gov (United States)

Hou, Guo-Jiao; Wang, Dong-Lin; Ali, Roshan; Zhou, Yu-Rong; Zhu, Zhen-Gang; Su, Gang

2018-01-01

Perovskite (CH3NH3PbI3) solar cells have made significant advances recently. In this paper, we propose a bilayer heterojunction solar cell comprised of a perovskite layer combining with a IV-VI group semiconductor layer, which can give a conversion efficiency even higher than the conventional perovskite solar cell. Such a scheme uses a property that the semiconductor layer with a direct band gap can be better in absorption of long wavelength light and is complementary to the perovskite layer. We studied the semiconducting layers such as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is the best, where the optical absorption efficiency in the perovskite/GeSe solar cell is dramatically increased. It turns out that the short circuit current density is enhanced 100% and the power conversion efficiency is promoted 42.7% (to a high value of 23.77%) larger than that in a solar cell with only single perovskite layer. The power conversion efficiency can be further promoted so long as the fill factor and open-circuit voltage are improved. This strategy opens a new way on developing the solar cells with high performance and practical applications.
Anomalous columnar order of charged colloidal platelets

Science.gov (United States)

Morales-Anda, L.; Wensink, H. H.; Galindo, A.; Gil-Villegas, A.

2012-01-01

Monte Carlo computer simulations are carried out for a model system of like-charged colloidal platelets in the isothermal-isobaric ensemble (NpT). The aim is to elucidate the role of electrostatic interactions on the structure of synthetic clay systems at high particle densities. Short-range repulsions between particles are described by a suitable hard-core model representing a discotic particle. This potential is supplemented with an electrostatic potential based on a Yukawa model for the screened Coulombic potential between infinitely thin disklike macro-ions. The particle aspect-ratio and electrostatic parameters were chosen to mimic an aqueous dispersion of thin, like-charged, rigid colloidal platelets at finite salt concentration. An examination of the fluid phase diagram reveals a marked shift in the isotropic-nematic transition compared to the hard cut-sphere reference system. Several statistical functions, such as the pair correlation function for the center-of-mass coordinates and structure factor, are obtained to characterize the structural organization of the platelets phases. At low salinity and high osmotic pressure we observe anomalous hexagonal columnar structures characterized by interpenetrating columns with a typical intercolumnar distance corresponding to about half of that of a regular columnar phase. Increasing the ionic strength leads to the formation of glassy, disordered structures consisting of compact clusters of platelets stacked into finite-sized columns. These so-called "nematic columnar" structures have been recently observed in systems of charge-stabilized gibbsite platelets. Our findings are corroborated by an analysis of the static structure factor from a simple density functional theory.
Chalcopyrite CuInSe2 films prepared by reactive sputtering

International Nuclear Information System (INIS)

Lommasson, T.C.; Burnett, A.F.; Chou, L.H.; Thornton, J.A.; Kim, M.

1987-01-01

Polycrystalline films of CuInSe 2 have been prepared on glass substrates by reactive cosputtering from Cu and In planar magnetron targets using Ar-H 2 Se as a working gas. The film compositions were close to the Cu 2 Se-In 2 Se 3 tie-line of the ternary phase diagram with Cu/In ratios ranging from 0.75 to about 2. This paper reports on measurements of the structural, electronic and optical properties of the films. The coatings on the Cu-rich side of the stoichiometric composition were characterized by a columnar structure with an uneven surface topography
Yield surface evolution for columnar ice

Science.gov (United States)

Zhou, Zhiwei; Ma, Wei; Zhang, Shujuan; Mu, Yanhu; Zhao, Shunpin; Li, Guoyu

A series of triaxial compression tests, which has capable of measuring the volumetric strain of the sample, were conducted on columnar ice. A new testing approach of probing the experimental yield surface was performed from a single sample in order to investigate yield and hardening behaviors of the columnar ice under complex stress states. Based on the characteristic of the volumetric strain, a new method of defined the multiaxial yield strengths of the columnar ice is proposed. The experimental yield surface remains elliptical shape in the stress space of effective stress versus mean stress. The effect of temperature, loading rate and loading path in the initial yield surface and deformation properties of the columnar ice were also studied. Subsequent yield surfaces of the columnar ice have been explored by using uniaxial and hydrostatic paths. The evolution of the subsequent yield surface exhibits significant path-dependent characteristics. The multiaxial hardening law of the columnar ice was established experimentally. A phenomenological yield criterion was presented for multiaxial yield and hardening behaviors of the columnar ice. The comparisons between the theoretical and measured results indicate that this current model is capable of giving a reasonable prediction for the multiaxial yield and post-yield properties of the columnar ice subjected to different temperature, loading rate and path conditions.
Structural and optical properties of Sb65Se35-xGex thin films

Science.gov (United States)

Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

2011-07-01

Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.
Surfactant-thermal syntheses, structures, and magnetic properties of Mn-Ge-sulfides/selenides

KAUST Repository

Zhang, Guodong; Li, Peizhou; Ding, Junfeng; Liu, Yi; Xiong, Weiwei; Nie, Lina; Wu, Tao; Zhao, Yanli; Tok, Alfred Iing Yoong; Zhang, Qichun

2014-01-01

tetrahedra, MnGe2Se7 trimer, and MnGe3Se10 T2 cluster. Compounds 1-3 have been fully characterized by single-crystal X-ray diffraction (XRD), powder XRD, UV-vis spectra, Fourier transform infrared spectroscopy, and thermogravimetric analysis. Moreover
Thermally-induced crystallization behaviour of 80GeSe2–20Ga2Se3 glass as probed by combined X-ray diffraction and PAL spectroscopy

International Nuclear Information System (INIS)

Shpotyuk, O.; Calvez, L.; Petracovschi, E.; Klym, H.; Ingram, A.; Demchenko, P.

2014-01-01

Highlights: • Chalcogenide Ge–Ga–Se glasses were annealed at 380 °C for 10, 25 and 50 h. • Crystallization of glasses during annealing indicates formation of crystals. • Structural changes are described by two-state positron trapping model. • Modification leading to nucleation and fragmentation of free volume of glasses. • The Ge–Ga–Se systems cannot be classified as typical pseudo-binary system. -- Abstract: Crystallization behaviour of 80GeSe 2 –20Ga 2 Se 3 glass caused by thermal annealing at 380 °C for 10, 25 and 50 h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related component in the fit of experimental positron lifetime spectra for annealed glasses testifies in a favour of structural fragmentation of larger free volume entities into smaller ones with preceding nucleation in the initial stage of thermal annealing. Because of strong deviation in defect-free bulk positron lifetime from corresponding additive values proper to boundary constituents, the studied glasses cannot be considered as typical representatives of pseudo-binary cut-section
Band structure analysis in SiGe nanowires

Energy Technology Data Exchange (ETDEWEB)

Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

2012-06-05

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.
Band structure analysis in SiGe nanowires

International Nuclear Information System (INIS)

Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

2012-01-01

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.
Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.
Formation of columnar (In,Ga)As quantum dots on GaAs(100)

International Nuclear Information System (INIS)

He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced
Corrected Article: Simulation and observation of line-slip structures in columnar structures of soft spheres [Phys. Rev. E 96, 012610 (2017)

Science.gov (United States)

Winkelmann, J.; Haffner, B.; Weaire, D.; Mughal, A.; Hutzler, S.

2017-07-01

We present the computed phase diagram of columnar structures of soft spheres under pressure, of which the main feature is the appearance and disappearance of line slips, the shearing of adjacent spirals, as pressure is increased. A comparable experimental observation is made on a column of bubbles under forced drainage, clearly exhibiting the expected line slip.
Energy levels and radiative transition rates for Ge XXXI, As XXXII, and Se XXXIII

Science.gov (United States)

Aggarwal, Sunny; Singh, J.; Jha, A. K. S.; Mohan, Man

2014-07-01

Fine-structure energies of the 67 levels belonging to the 1s2, 1s 2l, 1s3l, 1s4l, 1s5l, and 1s6l configurations of Ge XXXI, As XXXII, and Se XXXIII have been calculated using the General-Purpose Relativistic Atomic Structure Package. In addition, radiative rates, oscillator strengths, transition wavelengths, and line strengths have been calculated for all electric dipole, magnetic dipole, electric quadrupole, and magnetic quadrupole transitions among these levels. Lifetimes are also presented for all excited levels of these three ions. We have compared our results with the results available in the literature and the accuracy of the data is assessed. We predict new energy levels, oscillator strengths, and transition probabilities where no other theoretical or experimental results are available, which will form the basis for future experimental work.
Influence of lanthanum on the physico-chemical properties of solid solutions GeS0.5Se0.5

International Nuclear Information System (INIS)

Murquzov, M.I.; Alekperov, A.S.; Bayramov, R.B.

2010-01-01

By the methods of physical-chemical analysis (X-ray, MSA, as well as measurement of microhardness and density determination) the influence of La on the physico-chemical properties of solid solutions (GeS 0 .5Se 0 .5) 1 -x(La) x was studied and its microdiagram was plotted. At room temperature the GeS 0 .5Se 0 .5 based solid solution extent 4 at. percent of La. The dependence of lanthane microhardness was studied
Preparation and investigation of [GeSe4]100-xIx glasses as promising materials for infrared fiber sensors

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Plekhovich, A. D.; Kotereva, T. V.; Snopatin, G. E.; Gerasimenko, V. V.; Pushkin, A. A.

2016-10-01

The glasses of [GeSe4]100-xIx (x = 1, 3, 5, 8, 10) compositions are prepared; their thermal properties, transparency in the mid-IR range and stability against crystallization are investigated. The glass transition temperature (Tg) in this system decreases monotonically with increasing iodine content from the value of Tg = 176 °C at x = 1 to Tg = 129 °C at x = 10. It has been determined by X-ray diffraction method that the addition of iodine reduces the volume fraction of the crystalline phase in glasses after annealing at 350 °C. Using a single crucible technique, the rod of [GeSe4]95I5 glass was drawn into a single-index fiber of 300 μm diameter and 10 m length. The optical losses were 2-3 dB/m in the spectral range 2.5-8 μm; the minimum optical losses were 1.7 dB/m at a wavelength of 5.5 μm. The content of impurity hydrogen in the form of Se-H in the fiber was about 3.6 ppm(wt), impurity oxygen in the form of Ge-O is 1 ppm(wt). The possibility of use of such [GeSe4]95I5 glass single-index fiber for infrared analysis of liquids by example of crude oil and water solutions of acetone has been demonstrated.
Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated As2Se3 Thin Films

Directory of Open Access Journals (Sweden)

Pankaj Sharma

2008-01-01

Full Text Available The present paper reports the effect of Ge addition on the optical band gap and refractive index of As2Se3 thin films. Thin films of As2Se3 and (As2Se390Ge10 were prepared by thermal evaporation technique at base pressure 10−4 Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to As2Se3. The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.
Level and decay schemes of even-A Se and Ge isotopes from (n,n'γ) reaction studies

Energy Technology Data Exchange (ETDEWEB)

Sigaud, J.; Patin, Y.; McEllistrem, M. T.; Haouat, G.; Lachkar, J.

1975-06-01

The energy levels and the decay schemes of {sup 76}Se, {sup 78}Se, {sup 80}Se, {sup 82}Se and {sup 76}Ge have been studied through the measurements of (n,n'γ) differential cross sections. Gamma-ray excitation functions have been measured between 2.0- and 4.1-MeV incident neutron energy, and angular distribution have been observed for all of these isotopes.
Influence of lanthanium atoms on the physico-chemical properties of GeS0,5Se0,5 solid solutions

International Nuclear Information System (INIS)

Murguzov, M.I.; Alakbarov, A.S.; Bayramov, R.B.

2010-01-01

By the methods of physical-chemical analysis (DTA, X-ray, MSA, as well as measurement of microhardness and density determination) the influence of La on the physico-chemical properties of solid solutions (GeS 0 ,5Se 0 ,5) 1 -x(La) x was studied and its microdiagram was plotted. At room temperature the GeS 0 ,5Se 0 ,5 based solid solid solution extent to 4 at. percent La. The dependence of lanthane microhardness was studied
Thermally-induced crystallization behaviour of 80GeSe{sub 2}–20Ga{sub 2}Se{sub 3} glass as probed by combined X-ray diffraction and PAL spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Scientific Research Company “Carat”, 202, Stryjska str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa 42201 (Poland); Calvez, L.; Petracovschi, E. [Equipe Verres et Céramiques, UMR-CNRS 6226, Institute des Sciences chimiques de Rennes, Université de Rennes 1, 35042 Rennes Cedex (France); Klym, H. [Lviv polytechnic National University, 12 Bandera str., Lviv 79013 (Ukraine); Ingram, A. [Physics Faculty of Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland); Demchenko, P. [Ivan Franko National University of Lviv, 6, Kyryla and Mefodiya Str., Lviv 79005 (Ukraine)

2014-01-05

Highlights: • Chalcogenide Ge–Ga–Se glasses were annealed at 380 °C for 10, 25 and 50 h. • Crystallization of glasses during annealing indicates formation of crystals. • Structural changes are described by two-state positron trapping model. • Modification leading to nucleation and fragmentation of free volume of glasses. • The Ge–Ga–Se systems cannot be classified as typical pseudo-binary system. -- Abstract: Crystallization behaviour of 80GeSe{sub 2}–20Ga{sub 2}Se{sub 3} glass caused by thermal annealing at 380 °C for 10, 25 and 50 h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related component in the fit of experimental positron lifetime spectra for annealed glasses testifies in a favour of structural fragmentation of larger free volume entities into smaller ones with preceding nucleation in the initial stage of thermal annealing. Because of strong deviation in defect-free bulk positron lifetime from corresponding additive values proper to boundary constituents, the studied glasses cannot be considered as typical representatives of pseudo-binary cut-section.
Recent results on some columnar paramagnetic metallomesogens

Indian Academy of Sciences (India)

A broader view on some physical properties of columnar paramagnetic ... was evident by X-ray crystal structure determination in the solid state on a homologous ... leading to interfacial polarization as described for other LC materials before [9]. ... dodecyloxy tail on the phenyl rings) was described to exhibit a Colho phase ...

High-pressure structural behaviour of nanocrystalline Ge

International Nuclear Information System (INIS)

Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus
Characterization of as-grown and Ge-ion implanted CuGaSe{sub 2} thin films prepared by the CCSVT technique

Energy Technology Data Exchange (ETDEWEB)

Doka Yamigno, Serge

2006-08-15

Single phase polycrystalline thin films of CuGaSe{sub 2} in the compositional range of 1.0=[Ga]/[Cu]=1.3, corresponding to a thickness ranging from 1.6 {mu}m to 1.9 {mu}m deposited onto plain or Mo-coated soda lime glass (SLG) were prepared and found to be polycrystalline with a strongly preferred <221> orientation. A combination of microstructural investigations of the films by TEM, EDX within the TEM and ERDA measurements has shown that CuGaSe{sub 2} thin films possess high crystalline bulk quality with Cu, Ga and Se homogeneously distributed within the CuGaSe{sub 2} bulk. One of the main result of this present work was found to be the accumulation of Ga in the region of the CuGaSe2/Mo interface and the dependence of the CuGaSe{sub 2} surface composition on the integral [Ga]/[Cu] ratio in the film, namely Ga- and Cu-poor, Se-rich surface for stoichiometric films; and Cu- poor, and Ga- and Se- rich surface for increasing [Ga]/[Cu] ratios. These observations were also supported by optical measurements carried out through photoluminescence and absorption measurements. In order to gain a better understanding of the influence of the extrinsic doping of the CuGaSe{sub 2} films and why many attempts towards the type inversion in the p-type CuGaSe2 compounds by varying the composition or by doping with extrinsic defects have failed, ion implantation was used to introduce Ge into CuGaSe{sub 2}. Photoluminescence of the Ge containing films has evidenced the presence of new defects such as donor levels in the band gap. Electron spin resonance measurements of the Ge- containing CuGaSe2 films has highlighted an additional ESR resonance observed at g=2.003 ascribed to donors. However, Curie paramagnetism up to room temperature for all the Ge implanted films, characteristic of localized states has been observed for this resonance. (orig.)
Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

Science.gov (United States)

Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

2017-11-29

The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.
Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

Science.gov (United States)

Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

2002-12-01

The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley
GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

Science.gov (United States)

Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

2014-10-01

Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO2/Si counterparts.
Effect of Sn additive on the structure and crystallization kinetics in Ge–Se alloy

Energy Technology Data Exchange (ETDEWEB)

Abd-Elrahman, M.I., E-mail: mostafaia11@yahoo.com; Hafiz, M.M.; Abdelraheem, A.M.; Abu-Sehly, A.A.

2016-08-05

The structure of Ge{sub 20}Se{sub 80−x}Snx glassy alloys and crystallization phases are identified using the X-ray diffraction (XRD) and Scanning Electron Microscope (SEM). The glass transition kinetics and the crystallization mechanism of the system are studied using Differential Scanning Calorimeter (DSC) under non-isothermal condition. The results reveal that glass transition temperature (Tg) increases with increasing Sn content which is attributed to the increase in the coordination number. The increase of the glass transition activation energy (Eg) with increasing Sn content is attributed to the decrease in the internal energy of the system as Sn increases. The compositional dependence of both glass forming ability and thermal stability are studied. From the experimental data, the thermal stability parameter (S) is found to be maximum for Ge{sub 20}Se{sub 78}Sn{sub 2} alloy, which indicates that this alloy is thermally more stable in the composition range under investigation. The effect of composition on the crystallization mechanism is discussed using different kinetic models. The crystallization activation energy (Ec) decreases with increasing Sn. This is attributed to the addition of Sn increases the tendency of crystallization. The calculated values of Avrami exponent (n) indicates the crystallization process occurs in one-and two dimensions for Sn is less than or equals 12 at%, respectively. - Highlights: • Glass and crystallization transitions in Ge{sub 20}Se{sub 80−x}Sn{sub x} candidate for devices. • The addition of Sn increases the tendency of Ge-Se alloy to crystallization. • The glass forming ability and thermal stability increase as Sn decreases. • The dimension of the crystals growth is one or two depending on the Sn content.
Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

International Nuclear Information System (INIS)

Knowlton, W.B.; Lawrence Berkeley Lab., CA

1995-07-01

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 angstrom Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 angstrom, 500 angstrom, and 300 angstrom per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 angstrom/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 angstrom/side appear to correspond with the phonon transmission study
Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

Energy Technology Data Exchange (ETDEWEB)

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.
Columnar apple primary roots share some features of the columnar-specific gene expression profile of aerial plant parts as evidenced by RNA-Seq analysis.

Science.gov (United States)

Petersen, Romina; Djozgic, Haris; Rieger, Benjamin; Rapp, Steffen; Schmidt, Erwin Robert

2015-02-04

Primary roots (radicles) represent the first visible developmental stages of the plant and are crucial for nutrient supply and the integration of environmental signals. Few studies have analyzed primary roots at a molecular level, and were mostly limited to Arabidopsis. Here we study the primary root transcriptomes of standard type, heterozygous columnar and homozygous columnar apple (Malus x domestica) by RNA-Seq and quantitative real-time PCR. The columnar growth habit is characterized by a stunted main axis and the development of short fruit spurs instead of long lateral branches. This compact growth possesses economic potential because it allows high density planting and mechanical harvesting of the trees. Its molecular basis has been identified as a nested Gypsy-44 retrotransposon insertion; however the link between the insertion and the phenotype as well as the timing of the phenotype emergence are as yet unclear. We extend the transcriptomic studies of columnar tissues to the radicles, which are the earliest developmental stage and investigate whether homozygous columnar seedlings are viable. Radicles mainly express genes associated with primary metabolism, growth and development. About 200 genes show differential regulation in a comparison of heterozygous columnar radicles with non-columnar radicles, whereas the comparison of homozygous columnar radicles with non-columnar radicles yields about 300 differentially regulated genes. Genes involved in cellulose and phenylpropanoid biosynthesis, cell wall modification, transcription and translation, ethylene and jasmonate biosynthesis are upregulated in columnar radicles. Genes in the vicinity of the columnar-specific Gypsy-44 insertion experience an especially strong differential regulation: the direct downstream neighbor, dmr6-like, is downregulated in heterozygous columnar radicles, but strongly upregulated in columnar shoot apical meristems. The transcriptomic profile of primary roots reflects their pivotal
Synthesis, structure and electronic structure of a new polymorph of CaGe2

International Nuclear Information System (INIS)

Tobash, Paul H.; Bobev, Svilen

2007-01-01

Reported are the flux synthesis, the crystal structure determination, the properties and the band structure calculations of a new polymorph of CaGe 2 , which crystallizes with the hexagonal space group P6 3 mc (no. 186) with cell parameters of a=3.9966(9) and c=10.211(4)A (Z=2; Pearson's code hP6). The structure can be viewed as puckered layers of three-bonded germanium atoms, ∼ 2 [Ge 2 ] 2- , which are stacked along the direction of the c-axis in an ABAB-fashion. The germanium polyanionic layers are separated by the Ca cations. As such, this structure is closely related to the structure of the other CaGe 2 polymorph, which crystallizes with the rhombohedral CaSi 2 type in the R3-bar m space group (No. 166), where the ∼ 2 [Ge 2 ] 2- layers are arranged in an AA'BB'CC'-fashion, and are also interspaced by Ca 2+ cations. LMTO calculations suggest that in spite of the formal closed-shell configuration for all atoms and the apparent adherence to the Zintl rules for electron counting, i.e., Ca 2+ [3b-Ge 1- ] 2 ), the phase will be a poor metal due to a small Ca-3d-Ge-4p band overlap. Magnetic susceptibility measurements as a function of the temperature indicate that the new CaGe 2 polymorph exhibits weak, temperature independent, Pauli-paramagnetism
Crash worthy capacity of a hybridized epoxy-glass fiber aluminum columnar tube using repeated axial resistive force

International Nuclear Information System (INIS)

Paruka, Perowansa; Siswanto, Waluyo Adi; Maleque, Md Abdul; Shah, Mohd Kamal Mohd

2015-01-01

A combination of aluminum columnar member with composite laminate to form a hybrid structure can be used as collapsible energy absorbers especially in automotive vehicular structures to protect occupants and cargo. A key advantage of aluminum member in composite is that it provides ductile and stable plastic collapse mechanisms with progressive deformation in a stable manner by increasing energy absorption during collision. This paper presents an experimental investigation on the influence of the number of hybrid epoxy glass layers in overwrap composite columnar tubes. Three columnar tube specimens were used and fabricated by hand lay-up method. Aluminum square hollow shape was combined with externally wrapped by using an isophthalic epoxy resin reinforced with glass fiber skin with an orientation angle of 0 .deg. /90 .deg. The aluminum columnar tube was used as reference material. Crushed hybrid-composite columnar tubes were prepared using one, two, and three layers to determine the crash worthy capacity. Quasi-static crush test was conducted using INSTRON machine with an axial loading. Results showed that crush force and the number of layers were related to the enhancement of energy absorption before the collapse of columnar tubes. The energy absorption properties of the crushed hybrid-composite columnar tubes improved significantly with the addition of layers in the overwrap. Microscopic analysis on the modes of epoxy-glass fiber laminate failure was conducted by using scanning electron microscopy.
Crash worthy capacity of a hybridized epoxy-glass fiber aluminum columnar tube using repeated axial resistive force

Energy Technology Data Exchange (ETDEWEB)

Paruka, Perowansa [Jalan Politeknik, Kota Kinabalu (Malaysia); Siswanto, Waluyo Adi [Universiti Tun Hussein Onn Malaysia, Parit Raja (Malaysia); Maleque, Md Abdul [Universiti Islam Antarabangsa Malaysia, Kuala Lumpur (Malaysia); Shah, Mohd Kamal Mohd [Universiti Malaysia Sabah, Kota Kinabalu (Malaysia)

2015-05-15

A combination of aluminum columnar member with composite laminate to form a hybrid structure can be used as collapsible energy absorbers especially in automotive vehicular structures to protect occupants and cargo. A key advantage of aluminum member in composite is that it provides ductile and stable plastic collapse mechanisms with progressive deformation in a stable manner by increasing energy absorption during collision. This paper presents an experimental investigation on the influence of the number of hybrid epoxy glass layers in overwrap composite columnar tubes. Three columnar tube specimens were used and fabricated by hand lay-up method. Aluminum square hollow shape was combined with externally wrapped by using an isophthalic epoxy resin reinforced with glass fiber skin with an orientation angle of 0 .deg. /90 .deg. The aluminum columnar tube was used as reference material. Crushed hybrid-composite columnar tubes were prepared using one, two, and three layers to determine the crash worthy capacity. Quasi-static crush test was conducted using INSTRON machine with an axial loading. Results showed that crush force and the number of layers were related to the enhancement of energy absorption before the collapse of columnar tubes. The energy absorption properties of the crushed hybrid-composite columnar tubes improved significantly with the addition of layers in the overwrap. Microscopic analysis on the modes of epoxy-glass fiber laminate failure was conducted by using scanning electron microscopy.
Leaf micro-environment influence the altered foliar phenotype of columnar apple (Malus x domestica Borkh.) trees

DEFF Research Database (Denmark)

Talwara, Susheela; Grout, Brian William Wilson; Toldam-Andersen, Torben Bo

2015-01-01

in the phenotype of the leaves in the leaf clusters that subtend the fruits of CATs, compared to their standard counterparts. This initial investigation considers standard and columnar trees at different levels of genetic relatedness and records significant increases in leaf area, leaf mass per unit area......Columnar apple trees (CATs) have radically-altered architecture (significantly shorter internodes and lateral branches) when compared to standard apple trees, attributed to a mutation of the Co gene involved in apical dominance. These changes in architecture have been associated with changes......, chlorophyll content and competitive shading in the fruiting leaf clusters of columnar cultivars. Additionally, significant increases in intercepted light have been shown to be associated with the columnar structure, and carbon fixation is also increased. We propose that leaf micro-environment of columnar...
Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

Science.gov (United States)

Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

2015-06-01

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.
Junction parameters and characterization of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction

Energy Technology Data Exchange (ETDEWEB)

El-Nahass, M.M.; El-Shazly, E.A.A. [Ain Shams University, Physics Department, Faculty of Education, Roxy, Cairo (Egypt); Ali, M.H. [Ain Shams University, Physics Department, Faculty of Science, Abassia, Cairo (Egypt); Zedan, I.T. [High Institute of Engineering and Technology, Basic Science Department, El-Arish, North Sinai (Egypt)

2016-08-15

The analysis of the electrical properties of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction is examined. I-V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages (V < 0.25). While, at relatively high forward voltage, the space charge limited conduction is the operating mechanism. The rectification ratio, ideality factor, barrier height, total trap concentration and built-in voltage are determined. The capacitance-voltage (C-V) characteristics of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction are also investigated. The I-V curve of the Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction in the dark and after illumination is clarified. (orig.)
Phase relations in the quasi-binary Cu{sub 2}GeS{sub 3}-ZnS and quasi-ternary Cu{sub 2}S-Zn(Cd)S-GeS{sub 2} systems and crystal structure of Cu{sub 2}ZnGeS{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Parasyuk, O.V. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine)]. E-mail: oleg@lab.univer.lutsk.ua; Piskach, L.V. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine); Romanyuk, Y.E. [Advanced Photonics Laboratory, Institute of Imaging and Applied Optics, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Olekseyuk, I.D. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine); Zaremba, V.I. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, 6 Kyryla and Mefodiya Str., 79005 L' viv (Ukraine); Pekhnyo, V.I. [V.I. Vernadskii Institute of General and Inorganic Chemistry, Ukrainian National Academy of Sciences, Palladina Ave 32-34, 03680 Kiev (Ukraine)

2005-07-19

The isothermal section of the Cu{sub 2}S-Zn(Cd)S-GeS{sub 2} systems at 670K was constructed using X-ray diffraction analysis. At this temperature, two quaternary intermediate phases, Cu{sub 2}CdGeS{sub 4} and {approx}Cu{sub 8}CdGeS{sub 7}, exist in the Cu{sub 2}S-CdS-GeS{sub 2} system, and only one phase, Cu{sub 2}ZnGeS{sub 4}, exists in the Cu{sub 2}S-ZnS-GeS{sub 2} system. The phase diagram of the Cu{sub 2}GeS{sub 3}-ZnS system was constructed using differential-thermal analysis and X-ray diffraction, and the existence of Cu{sub 2}ZnGeS{sub 4} has been confirmed. It forms incongruently at 1359K. Powder X-ray diffraction was used to refine the crystal structure of Cu{sub 2}ZnGeS{sub 4}, which crystallizes in the tetragonal stannite-type structure at 670K (space group I4-bar 2m, a=0.534127(9)nm, c=1.05090(2)nm, R{sub I}=0.0477). The possibility of the formation of quaternary compounds in the quasi-ternary systems A{sup I}{sub 2}X-B{sup II}X-C{sup IV}X{sub 2}, where A{sup I}-Cu, Ag; B{sup II}-Zn, Cd, Hg; C{sup IV}-Si, Ge, Sn and X-S, Se, Te is discussed.
Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

Directory of Open Access Journals (Sweden)

Bo Zhang

2014-01-01

Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.
Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

2008-01-01

Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts
Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells.

Science.gov (United States)

Lee, Ya-Ju; Yao, Yung-Chi; Tsai, Meng-Tsan; Liu, An-Fan; Yang, Min-De; Lai, Jiun-Tsuen

2013-11-04

A III-V multi-junction tandem solar cell is the most efficient photovoltaic structure that offers an extremely high power conversion efficiency. Current mismatching between each subcell of the device, however, is a significant challenge that causes the experimental value of the power conversion efficiency to deviate from the theoretical value. In this work, we explore a promising strategy using CdSe quantum dots (QDs) to enhance the photocurrent of the limited subcell to match with those of the other subcells and to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells. The underlying mechanism of the enhancement can be attributed to the QD's unique capacity for photon conversion that tailors the incident spectrum of solar light; the enhanced efficiency of the device is therefore strongly dependent on the QD's dimensions. As a result, by appropriately selecting and spreading 7 mg/mL of CdSe QDs with diameters of 4.2 nm upon the InGaP/GaAs/Ge solar cell, the power conversion efficiency shows an enhancement of 10.39% compared to the cell's counterpart without integrating CdSe QDs.
Crystal structure of LaFe5Ge3O15 = LaFe5[GeO4][Ge2O7]O4

International Nuclear Information System (INIS)

Genkina, E.A.; Maksimov, B.A.; Mill, B.V.

1991-01-01

The authors have determined the structure of a new lanthanum-iron germanate LaFe 5 [GeO 4 ][GeO 4 ][Ge 2 O 7 ]O 4 (a = 18.040(4), b = 17.012(4), c = 7.591(1) angstrom, V = 2330.2(9) angstrom 3 , Z = 8, ρ t = 4.99 g/cm 3 , space ground Cmca, 1976 I hkl ≥ 3 σ(I), R = 4.5%). The compound is interesting because the framework simultaneously contains ortho- and diorthogroups of Ge and because of a classical set of coordination numbers (4,5,6) characteristic of trivalent iron within the composition of one structure. The coordination polyhedron of La has nine vertices

Fiber sensor on the basis of Ge26As17Se25Te32 glass for FEWS analysis

Science.gov (United States)

Velmuzhov, A. P.; Shiryaev, V. S.; Sukhanov, M. V.; Kotereva, T. V.; Churbanov, M. F.; Zernova, N. S.; Plekhovich, A. D.

2018-01-01

The high-purity Ge26As17Se25Te32 glass sample was prepared by chemical distillation purification method. This glass is characterized by high value of glass transition temperature (263°С), high optical transparency in the spectral range of 2-10 μm, and low content of residual impurities. The Ge26As17Se25Te32 glass rods were drawn into single-index fibers using the "rod" method and the single crucible technique. The optical losses in the 400 μm diameter fiber, fabricated by the "rod" method, were within 0.3-1 dB/m in the spectral range 5.2-9.3 μm. The minimum optical losses in the 320 μm diameter fiber, fabricated by the "crucible" technique, were 1.6-1.7 dB/m in the spectral range 6-8.5 μm. Using these Ge26As17Se25Te32 glass fibers as a sensor, the aqueous solutions of acetone (0-20 mol.%) and ethanol (0-90 mol.%) were analyzed by fiber evanescent wave spectroscopy. Peculiarities in the change of the integrated intensity and spectral position of absorption bands of these organic substances in dependence on the analyte composition and the length of the sensitive zone were established.
Disclosing the temperature of columnar jointing in lavas.

Science.gov (United States)

Lamur, Anthony; Lavallée, Yan; Iddon, Fiona E; Hornby, Adrian J; Kendrick, Jackie E; von Aulock, Felix W; Wadsworth, Fabian B

2018-04-12

Columnar joints form by cracking during cooling-induced contraction of lava, allowing hydrothermal fluid circulation. A lack of direct observations of their formation has led to ambiguity about the temperature window of jointing and its impact on fluid flow. Here we develop a novel thermo-mechanical experiment to disclose the temperature of columnar jointing in lavas. Using basalts from Eyjafjallajökull volcano (Iceland) we show that contraction during cooling induces stress build-up below the solidus temperature (980 °C), resulting in localised macroscopic failure between 890 and 840 °C. This temperature window for incipient columnar jointing is supported by modelling informed by mechanical testing and thermal expansivity measurements. We demonstrate that columnar jointing takes place well within the solid state of volcanic rocks, and is followed by a nonlinear increase in system permeability of <9 orders of magnitude during cooling. Columnar jointing may promote advective cooling in magmatic-hydrothermal environments and fluid loss during geothermal drilling and thermal stimulation.
Glass formation and the third harmonic generation of Cu2Se–GeSe2–As2Se3 glasses

International Nuclear Information System (INIS)

Reshak, A. H.; Klymovych, O. S.; Zmiy, O. F.; Myronchuk, G. L.; Zamuruyeva, O. V.; Alahmed, Z. A.; Chyský, J.; Bila, Jiri; Kamarudin, H.

2014-01-01

We have performed the investigation of the nonlinear optical properties namely the third harmonic generation (THG) of the glass-formation region in the Cu 2 Se–GeSe 2 –As 2 Se 3 system. The samples were synthesized by direct single-temperature method from high-purity elementary substances. We have found that the value of disorder parameter Δ depends on the composition of the glassy alloys. The measurements show that increasing the Cu 2 Se concentration leads to increased slope of the absorption edge, which may be explained by the decrease of the height of random potential relief for the electrons in the tails of the state density which border the band edges. A very sharp increase in the THG at low temperature was observed. Significant enhancement in THG was obtained with decreasing the energy gap, which agreed well with the nonlinear optical susceptibilities obtained from other glasses.
Fabrication of field-effect transistor utilizing oriented thin film of octahexyl-substituted phthalocyanine and its electrical anisotropy based on columnar structure

Science.gov (United States)

Ohmori, Masashi; Nakatani, Mitsuhiro; Kajii, Hirotake; Miyamoto, Ayano; Yoneya, Makoto; Fujii, Akihiko; Ozaki, Masanori

2018-03-01

Field-effect transistors with molecularly oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which characteristically form a columnar structure, have been fabricated, and the electrical anisotropy of C6PcH2 has been investigated. The molecularly oriented thin films of C6PcH2 were prepared by the bar-coating technique, and the uniform orientation in a large area and the surface roughness at a molecular level were observed by polarized spectroscopy and atomic force microscopy, respectively. The field effect mobilities parallel and perpendicular to the column axis of C6PcH2 were estimated to be (1.54 ± 0.24) × 10-2 and (2.10 ± 0.23) × 10-3 cm2 V-1 s-1, respectively. The electrical anisotropy based on the columnar structure has been discussed by taking the simulated results obtained by density functional theory calculation into consideration.
Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

Science.gov (United States)

Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

2017-07-01

Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.
Fish mucus alters the Flavobacterium columnare transcriptome

Science.gov (United States)

Columnaris disease which is caused by Flavobacterium columnare severely impacts the production of freshwater finfish species. Due to the impact on the aquaculture industry, research efforts to better understand the biological processes of F. columnare including the formation of biofilms and their co...
Measurement of oxygen disorder and nano-twin microstructure associated with columnar defects in YBCO

International Nuclear Information System (INIS)

Yan, Y.

1998-01-01

Studies of defects generated by high energy (>1 GeV) heavy ion irradiation in high-Tc superconductors have been performed by transmission electron microscopy (TEM). Our study shows that high dose irradiation leads to the formation of nano-twins, by which the columnar defects are connected. An analysis of the local Fourier components of the image intensity in [001] lattice images indicates that these new ''twin'' boundaries are much more diffuse than pre-existing twin boundaries in YBCO. The mechanism of the formation of nano-twin boundaries on {110} planes and their possible relation to superconducting properties are discussed
Crystal chemistry of germanates: Characteristic structural features of Li,Ge-germanates

International Nuclear Information System (INIS)

Ilyushin, G.D.; Dem'yanets, L.N.

2000-01-01

Crystallochemical classification of eleven compounds from the Li-germanate family is suggested. Depending on the set of the primary building units (PBU) (M-octahedra of the composition [GeO 6 ] and T-tetrahedra of the composition [GeO 4 ]) and the type of their 'condensation', these germanates are divided into three crystallochemical groups: framework MT-structures (four phases), condensed MT-structures (two phases), and tetrahedral T-condensed structures (five phases). The structural characteristics of the framework Li,Ge-germanates are considered, i.e., their symmetry, crystallographically independent sets of the primary building units, framework architecture, and the types of chains and layers of the (Ge,O)-radicals
Electronic Structure of GdCuGe Intermetallic Compound

Science.gov (United States)

Lukoyanov, A. V.; Knyazev, Yu. V.; Kuz'min, Yu. I.

2018-04-01

The electronic structure of GdCuGe intermetallic compound has been studied. Spin-polarized energy spectrum calculations have been performed by the band method with allowance for strong electron correlations in the 4 f-shell of gadolinium ions. Antiferromagnetic ordering of GdCuGe at low temperatures has been obtained in a theoretical calculation, with the value of the effective magnetic moment of gadolinium ions reproduced in fair agreement with experimental data. The electronic density of states has been analyzed. An optical conductivity spectrum has been calculated for GdCuGe; it reveals specific features that are analogous to the ones discovered previously in the GdCuSi compound with a similar hexagonal structure.
Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

Energy Technology Data Exchange (ETDEWEB)

Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

2014-10-15

We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.
A study of the Nb3Ge system by Ge K-edge extended x-ray absorption fine structure and x-ray absorption near-edge structure spectroscopy

International Nuclear Information System (INIS)

Saini, N L; Filippi, M; Wu Ziyu; Oyanagi, H; Ihara, H; Iyo, A; Agrestini, S; Bianconi, A

2002-01-01

The local structure of Nb 3 Ge intermetallic superconductor has been studied by Ge K-edge absorption spectroscopy. Extended x-ray absorption fine structure (EXAFS) experiments show two Ge-Nb distances. In addition to the crystallographic distance of ∼2.87 A, there exists a second Ge-Nb distance, shorter than the first by ∼0.2 A, assigned to a phase with short-range symmetry related to local displacements in the Nb-Nb chains. The x-ray absorption near-edge structure (XANES) spectrum has been simulated by full multiple-scattering calculations considering the local displacements determined by the EXAFS analysis. The XANES spectrum has been well reproduced by considering a cluster of 99 atoms within a radius of about 7 A from the central Ge atom and introducing determined local displacements
Structural study of Ge/GaAs thin films

International Nuclear Information System (INIS)

Lazarov, V K; Lari, L; Lytvyn, P M; Kholevchuk, V V; Mitin, V F

2012-01-01

Ge/GaAs heterostructure research is largely motivated by the application of this material in solar cells, metal-oxide-semiconductor field-effect transistors, mm-wave mixer diodes, temperature sensors and photodetectors. Therefore, understanding of how the properties of Ge/GaAs heterostructure depend on its preparation (growth) is of importance for various high-efficiency devices. In this work, by using thermal Ge evaporation on GaAs(100), we studied structural properties of these films as a function of the deposition rate. Film grains size and morphology show strong dependence of the deposition rate. Low deposition rates results in films with large crystal grains and rough surface. At high deposition rates films become flatter and their crystal grains size decreases, while at very high deposition rates films become amorphous. Cross-sectional TEM of the films show that the Ge films are granular single crystal epitaxially grown on GaAs. The Ge/GaAs interface is atomically abrupt and free from misfit dislocations. Stacking faults along the [111] directions that originate at the interface were also observed. Finally by using the Kelvin probe microscopy we show that work function changes are related to the grain structure of the film.
Optical spectra and band structure of Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals: experiment and theory.

Science.gov (United States)

Reshak, A H; Parasyuk, O V; Fedorchuk, A O; Kamarudin, H; Auluck, S; Chyský, J

2013-12-05

Theoretical and experimental studies of the Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals are performed. These crystals possess a lot of intrinsic defects which are responsible for their optoelectronic features. The theoretical investigations were performed by means of DFT calculations using different exchange-correlation potentials. The experimental studies were carried out using the modulated VUV ellipsometry for dielectric constants and birefringence studies. The comparison of the structure obtained from X-ray with the theoretically optimized structure is presented. The crucial role of the intrinsic defect states is manifested in the choice of the exchange correlation potential used. The data may be applicable for a large number of the ternary chalcogenides which are sensitive to the presence of the local disordered states near the band edges.
Proteomic analysis of the fish pathogen Flavobacterium columnare

Directory of Open Access Journals (Sweden)

Lawrence Mark L

2010-06-01

Full Text Available Abstract Background Flavobacterium columnare causes columnaris disease in cultured and wild fish populations worldwide. Columnaris is the second most prevalent bacterial disease of commercial channel catfish industry in the United States. Despite its economic importance, little is known about the expressed proteins and virulence mechanisms of F. columnare. Here, we report the first high throughput proteomic analysis of F. columnare using 2-D LC ESI MS/MS and 2-DE MALDI TOF/TOF MS. Results Proteins identified in this study and predicted from the draft F. columnare genome were clustered into functional groups using clusters of orthologous groups (COGs, and their subcellular locations were predicted. Possible functional relations among the identified proteins were determined using pathway analysis. The total number of unique F. columnare proteins identified using both 2-D LC and 2-DE approaches was 621, of which 10.95% (68 were identified by both methods, while 77.29% (480 and 11.76% (73 were unique in 2-D LC and 2-DE, respectively. COG groupings and subcellular localizations were similar between our data set and proteins predicted from the whole genome. Twenty eight pathways were significantly represented in our dataset (P Conclusion Results from this study provide experimental evidence for many proteins that were predicted from the F. columnare genome annotation, and they should accelerate functional and comparative studies aimed at understanding virulence mechanisms of this important pathogen.
Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

Science.gov (United States)

Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

2016-12-01

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.
Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

Science.gov (United States)

Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

2018-01-01

A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.
Electrodeposited Ni-W magnetic thin films with columnar nanocrystallites

International Nuclear Information System (INIS)

Sulitanu, N.; Brinza, F.

2002-01-01

Nanocrystalline Ni-W thin films (140 nm) containing from zero to 18 wt % W were electrolytically prepared and structural and magnetic characterized. XRD, SEM and TEM investigations have revealed that all segregated Ni columns are fcc-type whose [111] axis is oriented perpendicular to the film plane and have 140 nm in height and 6-27 nm in diameter. Depending on film composition, two types of nanostructures were observed: (a) single-phase nanostructure ( i nterphases , namely W enriched particles boundaries, and (b) two-phase nanostructure (7-18 wt %) in which a second Ni-W amorphous phase or even amorphous-disordered mixture separates the magnetic columnar Ni nanocrystallites (d = 6-14 nm). The columnar crystallites have an easy magnetization direction along their long axis mainly due to the in-plane internal biaxial stresses. Magnetic characteristics of prepared thin films are presented. (Authors)
Synthesis and structure of Li{sub 4}GeS{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Matsushita, Y [National Inst. of Materials and Chemical Research, Tsukuba (Japan). High Pressure Lab.; Kanatzidis, M G [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry

1998-01-01

The compound Li{sub 4}GeS{sub 4} has been prepared as transparent, light yellow moisture-sensitive crystals. Li{sub 4}GeS{sub 4} belongs to the space group Pnma with a = 14.107(6) A, b = 7.770(3) A and c = 6.162(2) A. The crystal structure was solved by direct-methods. The final R and R{sub w}-values are 1.85 and 1.65% for 866 observed reflections. The Li{sub 4}GeS{sub 4} structure has three crystallographically independent lithium sites and one germanium site. The lithium atoms adopt two different coordination types. The Li1 atom is coordinated to five sulfur atoms in a square pyramidal geometry, while the Li2 and Li3 atoms have distorted tetrahedral coordination. The Ge atom is tetrahedrally coordinated by four sulfur atoms and is found as [GeS{sub 4}]{sup 4-} units. The anisotropic three-dimensional crystal structure of Li{sub 4}GeS{sub 4} is described. (orig.) 57 refs.
Atomic structure of self-organizing iridium induced nanowires on Ge(001)

Energy Technology Data Exchange (ETDEWEB)

Kabanov, N.S., E-mail: n.kabanov@utwente.nl [Faculty of Physics, Moscow State University, 119991 (Russian Federation); Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Heimbuch, R.; Zandvliet, H.J.W. [Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Saletsky, A.M.; Klavsyuk, A.L. [Faculty of Physics, Moscow State University, 119991 (Russian Federation)

2017-05-15

Highlights: • Ir/Ge(001) structure has been studied with DFT calculations and scanning tunneling microscopy. • Ir/Ge(001) nanowires are composed of Ge atoms and Ir atoms are located in subsurface positions. • The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. - Abstract: The atomic structure of self-organizing iridium (Ir) induced nanowires on Ge(001) is studied by density functional theory (DFT) calculations and variable-temperature scanning tunneling microscopy. The Ir induced nanowires are aligned in a direction perpendicular to the Ge(001) substrate dimer rows, have a width of two atoms and are completely kink-less. Density functional theory calculations show that the Ir atoms prefer to dive into the Ge(001) substrate and push up the neighboring Ge substrate atoms. The nanowires are composed of Ge atoms and not Ir atoms as previously assumed. The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. Time-resolved scanning tunneling microscopy measurements reveal that this dynamics is caused by buckled Ge substrate dimers that flip back and forth between their two buckled configurations.
Electronic and geometric structures of Ge{sub n}{sup -} and Ge{sub n}{sup +} (n=5-10) clusters in comparison with corresponding Si{sub n} ions

Energy Technology Data Exchange (ETDEWEB)

Li Baoxing; Cao Peilin; Song Bin; Ye Zhezhen

2003-02-10

Using full-potential linear-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method, we have studied the geometric and electronic structures of ionic Ge{sub 5-10} clusters. Our calculations show that the ground state structures of some Ge cluster ions are different from those of their corresponding neutral Ge clusters. Furthermore, the positive Ge ions have more severe structural distortion than the negative Ge ions due to Jahn-Teller distortion. In addition, there are differences between the ground state structures of Ge ions and Si ions, although most of the Ge ions have similar geometrical configurations to their corresponding Si ions.

Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

International Nuclear Information System (INIS)

Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

2012-01-01

SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.
Incommensurate and commensurate magnetic structures of the ternary germanide CeNiGe3

International Nuclear Information System (INIS)

Durivault, L; Bouree, F; Chevalier, B; Andre, G; Weill, F; Etourneau, J; Martinez-Samper, P; Rodrigo, J G; Suderow, H; Vieira, S

2003-01-01

The structural properties of CeNiGe 3 have been investigated via electron diffraction and neutron powder diffraction (NPD). This ternary germanide crystallizes in the orthorhombic SmNiGe 3 -type structure (Cmmm space group). Electrical resistivity, ac- and dc-magnetization measurements show that CeNiGe 3 orders antiferromagnetically below T N = 5.5(2) K and exclude the occurrence at low temperatures of a spin-glass state for CeNiGe 3 as previously reported. Specific heat measurements and NPD both reveal two magnetic transitions, observed at T N1 = 5.9(2) K and T N2 = 5.0(2) K. Between T N1 and T N2 , the Ce magnetic moments in CeNiGe 3 are ordered in a collinear antiferromagnetic structure associated with the k 1 = (100) wavevector and showing a relationship with the magnetic structure of the Ce 3 Ni 2 Ge 7 ternary germanide. Below T N2 , this k 1 = (100) commensurate magnetic structure coexists with an incommensurate helicoidal magnetic structure associated with k 2 = (00.409(1)1/2). This last magnetic structure is highly preponderant below T N2 (93(5)% in volume). At 1.5 K, the Ce atoms in CeNiGe 3 carry a reduced ordered magnetic moment (0.8(2) μ B ). This value, smaller than that obtained in Ce 3 Ni 2 Ge 7 , results from an important hybridization of the 4f(Ce) orbitals with those of the Ni and Ge ligands
Comparative analysis of the Flavobacterium columnare genomovar I and II genomes

Science.gov (United States)

Columnaris disease caused by Gram-negative rod Flavobacterium columnare is one of the most common diseases of catfish. F. columnare is also a common problem in other cultured fish species worldwide. F. columnare has three major genomovars; we have sequenced a representative strain from genomovar I (...
Sn-Sb-Se based binary and ternary alloys for phase change memory applications

Energy Technology Data Exchange (ETDEWEB)

Chung, Kyung-Min

2008-10-28

In this work, the effect of replacing Ge by Sn and Te by Se was studied for a systematic understanding and prediction of new potential candidates for phase change random access memories applications. The temperature dependence of the electrical/structural properties and crystallization kinetics of the Sn-Se based binary and Sn-Sb-Se based ternary alloys were determined and compared with those of the GeTe and Ge-Sb-Te system. The temperature dependence of electrical and structural properties were investigated by van der Pauw measurements, X-ray diffraction, X-ray reflectometry. By varying the heating rate, the Kissinger analysis has been used to determine the combined activation barrier for crystallization. To screen the kinetics of crystallization, a static laser tester was employed. In case of binary alloys of the type Sn{sub x}Se{sub 1-x}, the most interesting candidate is SnSe{sub 2} since it crystallizes into a single crystalline phase and has high electrical contrast and reasonably high activation energy for crystallization. In addition, the SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloy system also might be sufficient for data retention due to their higher transition temperature and activation energy for crystallization in comparison to GeTe-Sb{sub 2}Te{sub 3} system. Furthermore, SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloys have a higher crystalline resistivity. The desired rapid crystallization speed can be obtained for Sn{sub 1}Sb{sub 2}Se{sub 5} and Sn{sub 2}Sb{sub 2}Se{sub 7} alloys. (orig.)
Optical absorption, piezoelectric effect and second harmonic generation studies of single crystal AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} solid solution

Energy Technology Data Exchange (ETDEWEB)

Myronchuk, G.L.; Krymus, A.S.; Piasecki, M. [Institute of Physics, J. Dlugosz University, Czestochowa (Poland); Eastern European National University, Physics Department, Lutsk (Ukraine); Lakshminarayana, G. [Universiti Putra Malaysia, Wireless and Photonic Networks Research Centre, Faculty of Engineering, Serdang, Selangor (Malaysia); Kityk, I.V. [Czestochowa University of Technology, Faculty of Electrical Engineering, Czestochowa (Poland); Eastern European National University, Physics Department, Lutsk (Ukraine); Parasyuk, O.V. [Eastern European National University, Department of Chemistry, Lutsk (Ukraine); Rudysh, M.Ya.; Shchepanskyi, P.A. [Institute of Physics, J. Dlugosz University, Czestochowa (Poland); Ivan Franko National University of Lviv, Physics Department, Lviv (Ukraine)

2017-03-15

Spectral features of absorption were studied for novel AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} solid-state alloys at different temperatures. The synthesized crystals structure parameters are obtained by the X-ray Rietveld refinement method. During increasing temperature from 100 up to 300 K, the energy gap of AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} decreases linearly from 2.05 up to 1.94 eV at a rate 5.7 x 10{sup -4} eV/K. The magnitudes of piezoelectric coefficients are significantly changed and demonstrate substantial anisotropy. At room temperature, these values are equal to 5.2 pm/V (d{sub 11}), 31.5 pm/V (d{sub 22}) and 35.5 pm/V (d{sub 33}). It is crucial that with an increasing temperature the piezoelectric efficiencies are increased. We have explored temperature and laser-induced changes of piezoelectric coefficients. (orig.)
Thermal analysis studies of Ge additive of Se-Te glasses

International Nuclear Information System (INIS)

Mohamed, M.; Abdel-Rahim, M.A.

2016-01-01

Ge x Se 50 Te 50-x (x= 5, 15, 20, 35 at.%) bulk glasses were synthesized by the melt quenching method. The amorphous nature of the investigated glasses was determined by X-ray diffraction. Results of differential scanning calorimetry (DSC) of the studied compositions under non-isothermal conditions were reported and discussed. The glass transition temperature (T g ), onset crystallization temperature (T c ), and crystallization peak temperature (T p ) were determined from DSC traces at different heating rates. It was found that the values of T g , T c , and T p rely on both composition and heating rate. A double crystallization stages were observed in the DSC results. Various kinetics parameters such as the glass transition energy (E g ), crystallization activation energy (E c ), and rate constant (K p ) were calculated. The glass-forming ability of the studied compositions was discussed as function of the determined kinetics parameters. (orig.)
Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

Science.gov (United States)

Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T

2015-09-04

We investigate the structural properties and strain state of Ge nano-structures selectively grown on Si pillars of about 60 nm diameter with different SiGe buffer layers. A matrix of TEOS SiO2 surrounding the Si nano-pillars causes a tensile strain in the top part at the growth temperature of the buffer that reduces the misfit and supports defect-free initial growth. Elastic relaxation plays the dominant role in the further increase of the buffer thickness and subsequent Ge deposition. This method leads to Ge nanostructures on Si that are free from misfit dislocations and other structural defects, which is not the case for direct Ge deposition on these pillar structures. The Ge content of the SiGe buffer is thereby not a critical parameter; it may vary over a relatively wide range.
Structure of Ag, Fe and Ge microclusters

International Nuclear Information System (INIS)

Montano, P.A.; Shenoy, G.K.; Schulze, W.

1989-01-01

The structures of Ag, Fe and Ge microclusters were determined using EXAFS. The measurements were performed over a wide range of clusters sizes. The clusters were prepared using the gas aggregation technique and isolated in solid argon at 4.2 K. The measurements were performed at the National Synchrotron Light Source (NSLS) at beam line X-18B. A strong contraction of the interatomic distances was observed for Ag dimers and multimers. Silver clusters larger than 12 A mean diameter show a small contraction of the nn distance and a structure consistent with an fcc lattice. By contrast clusters smaller than 12 A show the presence of a small expansion and a strong reduction or absence of nnn in the EXAFS signal. This points towards a different crystallographic structure for Ag microclusters with diameter less than 12 A. In iron clusters we observe a gradual reduction of the nn distance as the cluster size decreases. The interatomic distance for iron dimers was determined to be 1.94 A, in good agreement with earlier measurements. The iron microclusters show a bcc structure down to a mean diameter of 9 A. Iron clusters with 9 A mean diameter show a structure inconsistent with a bcc lattice. The new structure is consistent with an fcc or hcp lattice. The measurements on Ge clusters show the presence of only nearest neighbors. There was clear evidence of temporal annealing as determined by variations in the near edge structure of the K-absorption edge. Absorption edge measurements were also performed for free Ge clusters travelling perpendicular to the direction of the synchrotron radiation beam. The measurements performed on the free clusters were consistent with those obtained for matrix isolated clusters. (orig.)
Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Shklyaev, Alexander, E-mail: shklyaev@isp.nsc.ru [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Bolotov, Leonid; Poborchii, Vladimir; Tada, Tetsuya [National Institute of Advanced Industrial Science and Technology, Higashi 1-1-1, Tsukuba, Ibaraki 305-8562 (Japan)

2015-05-28

The formation of three-dimensional (3D) structures during Ge deposition on Si(111) at about 800 °C is studied with scanning tunneling, Kelvin probe and electron microscopies, and scanning tunneling and Raman spectroscopies. The observed surface morphology is formed by dewetting of Ge from Si(111), since it occurs mainly by means of minimization of surface and interfacial energies. The dewetting proceeds through massive Si eroding around growing 3D structures, providing them to be composed of SiGe with about a 30% Ge content, and leads to the significant reduction of the SiGe/Si interface area. It is found that the SiGe top component of 3D structures forms sharp interfaces with the underlying Si. The minimization of interfacial and strain energies occurs on the way that the 3D structures appear to get the dendrite-like shape. The Ge distribution in the 3D SiGe structures is inhomogeneous in the lateral dimension with a higher Ge concentration in their central areas and Ge segregation on their surface.
Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

International Nuclear Information System (INIS)

Shklyaev, Alexander; Bolotov, Leonid; Poborchii, Vladimir; Tada, Tetsuya

2015-01-01

The formation of three-dimensional (3D) structures during Ge deposition on Si(111) at about 800 °C is studied with scanning tunneling, Kelvin probe and electron microscopies, and scanning tunneling and Raman spectroscopies. The observed surface morphology is formed by dewetting of Ge from Si(111), since it occurs mainly by means of minimization of surface and interfacial energies. The dewetting proceeds through massive Si eroding around growing 3D structures, providing them to be composed of SiGe with about a 30% Ge content, and leads to the significant reduction of the SiGe/Si interface area. It is found that the SiGe top component of 3D structures forms sharp interfaces with the underlying Si. The minimization of interfacial and strain energies occurs on the way that the 3D structures appear to get the dendrite-like shape. The Ge distribution in the 3D SiGe structures is inhomogeneous in the lateral dimension with a higher Ge concentration in their central areas and Ge segregation on their surface
Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

International Nuclear Information System (INIS)

RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

2007-01-01

The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer
Direct nuclear reactions with polarized protons: an experimental study of Ge and Se

International Nuclear Information System (INIS)

Moonen, W.H.L.

1986-01-01

The present investigation, is concerned with excited states of some transitional nuclides, which, through the experimental improvements, became accessible for polarized proton experiments. The aim was to see how nuclei behave when they have a proton and/or neutron number inbetween 28 and 50. Another aim was the completion of the picture of even-even nuclei in general where the research started with the nuclei Fe (Z=26) and Ni (Z=28). Therefore some nuclei were chosen which follow this series: Ge, Z=32, N=38,40,42,44; Se, Z=34, N=42,44,46. (Auth.)
Experimental charge density determination in iso-structural Tellurides: Hf0.85GeTe4 and ZrGeTe4

International Nuclear Information System (INIS)

Israel, S.; Saravana Kumar, S.; Sheeba, R.A.J.R.; Saravanan, R.

2012-01-01

Hf 0.85 GeTe 4 is isostructural with stoichiometric ZrGeTe 4 and their crystal structure adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face sharing Hf/Zr-centered bicapped trigonal prisms and corner sharing Ge- centered tetrahedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps. Single crystal XRD is used for the refinement of the structural parameters. The space group Cmc2 1 was considered and the structure was the refined using the harmonic model by the software called JANA2006. The refined structure factors were then subsequently used in MEM (Maximum Entropy Method) technique for the construction of the charge density in the unit cell using software called PRIMA and then visualized with the help of visualization software called VESTA
Ge22As20Se58 glass ultrafast laser inscribed waveguides for mid-IR integrated optics

DEFF Research Database (Denmark)

Morris, James M.; Mackenzie, Mark D.; Petersen, Christian Rosenberg

2018-01-01

Ultrafast laser inscription has been used to produce channel waveguides in Ge22As20Se58 glass (GASIR-1, Umicore N.V). The mode field diameter and waveguide losses at 2.94 mu m were measured along with the waveguide dispersion in the 1 to 4.5 mu m range, which is used to estimate the zero-dispersi...... ultrafast laser inscribed waveguide devices in GASIR-1 for mid-IR integrated optics applications. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.......Ultrafast laser inscription has been used to produce channel waveguides in Ge22As20Se58 glass (GASIR-1, Umicore N.V). The mode field diameter and waveguide losses at 2.94 mu m were measured along with the waveguide dispersion in the 1 to 4.5 mu m range, which is used to estimate the zero......-dispersion wavelength. Z-scan measurements of bulk samples have also been performed to determine the nonlinear refractive index. Finally, midIR supercontinuum generation has been shown when pumping the waveguides with femtosecond pulses centered at 4.6 mu m. Supercontinuum spanning approximately 4 mu m from 2.5 to 6...
Growth, structure, and properties of GaAs-based (GaAs){sub 1–x–y}(Ge{sub 2}){sub x}(ZnSe){sub y} epitaxial films

Energy Technology Data Exchange (ETDEWEB)

Zaynabidinov, S. Z., E-mail: prof-sirojiddin@mail.ru [Babur Andizhan State University (Uzbekistan); Saidov, A. S.; Leiderman, A. Yu. [Starodubtsev Physical–Technical Institute (Uzbekistan); Kalanov, M. U. [Academy of Sciences of the Republic of Uzbekistan, Institute of Nuclear Physics (Uzbekistan); Usmonov, Sh. N. [Starodubtsev Physical–Technical Institute (Uzbekistan); Rustamova, V. M. [Academy of Sciences of the Republic of Uzbekistan, Institute of Nuclear Physics (Uzbekistan); Boboev, A. Y. [Babur Andizhan State University (Uzbekistan)

2016-01-15

The possibility of growing the (GaAs){sub 1–x–y}(Ge{sub 2}){sub x}(ZnSe){sub y} alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin solution–melt is shown. X-ray diffraction shows that the grown film is single-crystal with the (100) orientation and has the sphalerite structure. The crystal-lattice parameter of the film is a{sub f} = 0.56697 nm. The features of the spectral dependence of the photosensitivity are caused by the formation of various complexes of charged components. It is established that the I–V characteristic of such structures is described by the exponential dependence I = I{sub 0}exp(qV/ckT) at low voltages (no higher than 0.4 V) and by the power dependence J ∼ V{sup α}, where the exponent α varies with increasing voltage at high voltages (V > 0.5 V). The results are treated within the framework of the theory of the drift mechanism of current transfer taking into account the possibility of the exchange of free carriers within the recombination complex.
Fabrication and characterization of Ge20Sb15Se65 chalcogenide glass rib waveguides for telecommunication wavelengths

International Nuclear Information System (INIS)

Li, Jun; Shen, Xiang; Sun, Junqiang; Vu, Khu; Choi, Duk-Yong; Wang, Rongping; Luther-Davies, Barry; Dai, Shixun; Xu, Tiefeng; Nie, Qiuhua

2013-01-01

We report on the fabrication and optical properties of Ge 20 Sb 15 Se 65 chalcogenide glass rib waveguides on a single photonic chip. Radio-frequency magnetron sputtering method is employed to deposit 1.36-μm-thick films and reactive ion etching with CHF 3 is used to pattern 0.76-μm-deep rib waveguides of 1–4 μm wide with low surface roughness and vertical sidewalls. Using lensed fibers, the insertion losses for rib waveguides of different widths are measured and propagation losses are estimated to be lower than 1 dB/cm. Finite difference method simulations and refractive index/curve fitting are used to observe a moderate normal dispersion of the waveguides at 1550 nm. - Highlights: • RF magnetron sputtering was used to deposit uniform Ge 20 Sb 15 Se 65 thin films. • CHF 3 reactive ion etching of rib waveguides vertical profile and smooth sidewall. • Insertion losses at 1550 nm measured and low propagation losses estimated. • Dispersion engineered by finite difference methods and refractive curve fitting
Photoconductivity in the chalcohalide semiconductor, SbSeI: a new candidate for hard radiation detection.

Science.gov (United States)

Wibowo, Arief C; Malliakas, Christos D; Liu, Zhifu; Peters, John A; Sebastian, Maria; Chung, Duck Young; Wessels, Bruce W; Kanatzidis, Mercouri G

2013-06-17

We investigated an antimony chalcohalide compound, SbSeI, as a potential semiconductor material for X-ray and γ-ray detection. SbSeI has a wide band gap of 1.70 eV with a density of 5.80 g/cm(3), and it crystallizes in the orthorhombic Pnma space group with a one-dimensional chain structure comprised of infinite zigzag chains of dimers [Sb2Se4I8]n running along the crystallographic b axis. In this study, we investigate conditions for vertical Bridgman crystal growth using combinations of the peak temperature and temperature gradients as well as translation rate set in a three-zone furnace. SbSeI samples grown at 495 °C peak temperature and 19 °C/cm temperature gradient with 2.5 mm/h translation rate produced a single phase of columnar needlelike crystals aligned along the translational direction of the growth. The ingot sample exhibited an n-type semiconductor with resistivity of ∼10(8) Ω·cm. Photoconductivity measurements on these specimens allowed us to determine mobility-lifetime (μτ) products for electron and hole carriers that were found to be of similar order of magnitude (∼10(-4) cm(2)/V). Further, the SbSeI ingot with well-aligned, one-dimensional columnar needlelike crystals shows an appreciable response of Ag Kα X-ray.
Structural studies of amorphous Mo-Ge alloys using synchrotron radiation

International Nuclear Information System (INIS)

Kortright, J.B.

1984-06-01

Structural changes in sputtered amorphous Mo-Ge alloy films with composition varying from a-Ge to about 70 at. % Mo have been studied with several x-ray techniques. Results of individual techniques are presented and discussed in separate chapters. The complementary nature of information obtained from EXAFS and scattering for these materials is discussed in a separate chapter. A concluding chapter summarizes the results and structural changes with composition
Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

Directory of Open Access Journals (Sweden)

Nigel J. Cook

2015-03-01

Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent
The influence of Ge on optical and thermo- mechanical properties of S-Se chalcogenide glasses

Science.gov (United States)

Samudrala, Kavitha; Babu Devarasetty, Suresh

2018-05-01

S-Se-Ge glasses were prepared by melt quenching method to investigate the effect of Germanium on thermo-mechanical and optical properties of chalcogenide glasses. The glassy nature of the samples has been verified by x-ray diffraction and DSC studies that the samples are glassy in nature. The optical band gap of the samples was estimated by the absorption spectrum fitting method. The optical band gap increased from 1.61 ev for x = 0 sample to 1.90 ev for x = 40 sample and is explained in terms of cohesive energies. The basic thermo-mechanical parameters such as micro-hardness, Volume (Vh) and formation energy (Eh) of micro voids in the glassy network, as well as the modulus of Elasticity (E) have been calculated for prepared glasses.in present glasses. The variation in these parameters with Ge content correlated with heat of atomization of alloys.

Chemical states and electronic structure of a HfO(-2)/Ge(001) interface

International Nuclear Information System (INIS)

Seo, Kang-ill; McIntyre, Paul C.; Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; SLAC, SSRL; Saraswat, Krishna C.; Stanford U., Elect. Eng. Dept.

2005-01-01

We report the chemical bonding structure and valence band alignment at the HfO 2 /Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO 2 film using a dilute HF-solution. We found that a very non-stoichiometric GeO x layer exists at the HfO 2 /Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO x was determined to be ΔE v (Ge-GeO x ) = 2.2 ± 0.15 eV, and that between Ge and HfO 2 , ΔE v (Ge-HfO 2 ) = 2.7 ± 0.15 eV
Effect of temperature and pressure on non-linear conduction in GeTeSe chalcogenide glass

International Nuclear Information System (INIS)

El-Mansy, M.K.

1998-01-01

The I-V characteristic curves were studied in the temperature range 301-359 K and pressure range up to 7.15 x 10 9 Pa which illustrate a non-linear behaviour below (high-resistance region) and beyond (negative-resistance region) a breakdown point characterising Ge 27 Te 62 Se 11 chalcogenide glasses. The general behaviour is shifted towards lower voltage and higher current when the ambient temperature and/or the applied pressure were increased. The non-linear behaviour in the pre breakdown region is discussed according to the Poole-Frenkel field emission of electrons from deep traps located at a depth equal to 0.372eV. The analysis of the effect of field on the non-linear conduction in Ge 27 Te 62 Se 11 chalcogenide glass suggests a modification of the energy difference between filled and empty sites, where the effect of pressure suggests a reduction of the energy gap width. The analysis based on simple thermal effects in the region closer to the breakdown point implies the electrothermal process initiating the negative resistance region. The results of post breakdown region (negative-resistance region) imply the electron hopping between filled and empty localised states at Fermi level. The density of localised states is estimated which lies in the range 5.7 x 10 16 -1.84 x 10 18 cm -3 /eV
Electronic structure of Ag8GeS6

Directory of Open Access Journals (Sweden)

D.I. Bletskan

2017-04-01

Full Text Available For the first time, the energy band structure, total and partial densities of states of Ag8GeS6 crystal were calculated using the ab initio density functional method in LDA and LDA+U approximations. Argyrodite is direct-gap semiconductor with the calculated band gap width Egd = 1.46 eV in the LDA+U approximation. The valence band of argyrodite contains four energy separated groups of occupied subzones. The unique feature of electron-energy structure of Ag8GeS6 crystal is the energy overlapping between the occupied d-states of Ag atoms and the delocalized valence p-states of S atoms in relatively close proximity to the valence band top.
Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD

Directory of Open Access Journals (Sweden)

Yu Wang

2015-11-01

Full Text Available Amorphous Ge-rich Si1−xGex films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD. The structural evolution of the deposited films annealed at various temperatures (Ta is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.
Applications of a pnCCD detector coupled to columnar structure CsI(Tl) scintillator system in ultra high energy X-ray Laue diffraction

Science.gov (United States)

Shokr, M.; Schlosser, D.; Abboud, A.; Algashi, A.; Tosson, A.; Conka, T.; Hartmann, R.; Klaus, M.; Genzel, C.; Strüder, L.; Pietsch, U.

2017-12-01

Most charge coupled devices (CCDs) are made of silicon (Si) with typical active layer thicknesses of several microns. In case of a pnCCD detector the sensitive Si thickness is 450 μm. However, for silicon based detectors the quantum efficiency for hard X-rays drops significantly for photon energies above 10 keV . This drawback can be overcome by combining a pixelated silicon-based detector system with a columnar scintillator. Here we report on the characterization of a low noise, fully depleted 128×128 pixels pnCCD detector with 75×75 μm2 pixel size coupled to a 700 μm thick columnar CsI(Tl) scintillator in the photon range between 1 keV to 130 keV . The excellent performance of the detection system in the hard X-ray range is demonstrated in a Laue type X-ray diffraction experiment performed at EDDI beamline of the BESSY II synchrotron taken at a set of several GaAs single crystals irradiated by white synchrotron radiation. With the columnar structure of the scintillator, the position resolution of the whole system reaches a value of less than one pixel. Using the presented detector system and considering the functional relation between indirect and direct photon events Laue diffraction peaks with X-ray energies up to 120 keV were efficiently detected. As one of possible applications of the combined CsI-pnCCD system we demonstrate that the accuracy of X-ray structure factors extracted from Laue diffraction peaks can be significantly improved in hard X-ray range using the combined CsI(Tl)-pnCCD system compared to a bare pnCCD.
Efecto de la densidad de semillas en la germinación de Isolatocereus dumortieri y Myrtillocactus geometrizans, cactáceas columnares endémicas de México Effect of seed density on germination of Isolatocereus dumortieri and Myrtillocactus geometrizans, endemic columnar cacti species from Mexico

Directory of Open Access Journals (Sweden)

Joel Flores

2009-04-01

Full Text Available Se evaluó el efecto de la densidad de semillas en la germinación de 2 cactáceas columnares: Isolatocereus dumortieri y Myrtillocactus geometrizans. Se utilizaron 5 tratamientos de densidad de semillas (1, 5, 10, 20 y 50 semillas. Isolatocereus dumortieri mostró menor porcentaje de germinación con el aumento de la densidad, mientras que la germinación de M. geometrizans no fue afectada por la densidad de semillas. Estos resultados sugieren que las plántulas de I. dumortieri podrían competir por recursos.The effect of seed density on the germination of 2 columnar cactus species (Isolatocereus dumortieri and Myrtillocactus geometrizans was evaluated using 5 seed density treatments (1, 5, 10, 20 and 50 seeds. Isolatocereus dumortieri had a lower germination percentage with increasing seed density; germination of M. geometrizans was not affected by seed density. These results suggest that I. dumortieri seedlings might compete for resources with siblings.
Short-range order structures of self-assembled Ge quantum dots probed by multiple-scattering extended x-ray absorption fine structure

International Nuclear Information System (INIS)

Sun Zhihu; Wei Shiqiang; Kolobov, A.V.; Oyanagi, H.; Brunner, K.

2005-01-01

Multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) has been used to investigate the local structures around Ge atoms in self-assembled Ge-Si quantum dots (QDs) grown on Si(001) substrate. The MS effect of Ge QDs is dominated by the scattering path Ge 0 →B 1 →B 2 →Ge 0 (DS2), which contributes a signal destructively interfering with that of the second shell single-scattering path (SS2). MS-EXAFS analysis reveals that the degree of Ge-Si intermixing for Ge-Si QDs strongly depends on the temperature at which the silicon cap layer is overgrown. It is found that the interatomic distances (R Ge-Ge and R Ge-Si ) within the third nearest-neighbor shells in Ge-Si QDs indicate the compressively strained nature of QDs. The present study demonstrates that the MS-EXAFS provides detailed information on the QDs strain and the Ge-Si mixing beyond the nearest neighbors
Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

Energy Technology Data Exchange (ETDEWEB)

Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

2010-06-30

Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.
Natural SnGeS₃ from Radvanice near Trutnov (Czech Republic): its description, crystal structure refinement and solid solution with PbGeS₃

DEFF Research Database (Denmark)

Sejkora, Jiri; Berlepsch, Peter; Makovicky, Emil

2001-01-01

geologi, SnGeS3-PbGeS3, Radvanice, Czech Republic, chemical analysis, XRD data, crystal structure......geologi, SnGeS3-PbGeS3, Radvanice, Czech Republic, chemical analysis, XRD data, crystal structure...
Structure of 78Ge from the 76Ge(t,p)78Ge reaction

International Nuclear Information System (INIS)

Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

1978-01-01

The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell
Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide

Energy Technology Data Exchange (ETDEWEB)

Feng Song; Gao Yong; Yang Yuan [Department of Electronic Engineering, Xi' an University of Technology, Xi' an 710048 (China); Feng Yuchun, E-mail: vonfs@yahoo.com.c [Key Laboratories of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen 518060 (China)

2009-08-15

The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method (BPM) and the experimental results. (semiconductor devices)
Optical and structural characterization of Ge clusters embedded in ZrO2

Science.gov (United States)

Agocs, E.; Zolnai, Z.; Rossall, A. K.; van den Berg, J. A.; Fodor, B.; Lehninger, D.; Khomenkova, L.; Ponomaryov, S.; Gudymenko, O.; Yukhymchuk, V.; Kalas, B.; Heitmann, J.; Petrik, P.

2017-11-01

The change of optical and structural properties of Ge nanoclusters in ZrO2 matrix have been investigated by spectroscopic ellipsometry versus annealing temperatures. Radio-frequency top-down magnetron sputtering approach was used to produce the samples of different types, i.e. single-layers of pure Ge, pure ZrO2 and Ge-rich-ZrO2 as well as multi-layers stacked of 40 periods of 5-nm-Ge-rich-ZrO2 layers alternated by 5-nm-ZrO2 ones. Germanium nanoclusters in ZrO2 host were formed by rapid-thermal annealing at 600-800 °C during 30 s in nitrogen atmosphere. Reference optical properties for pure ZrO2 and pure Ge have been extracted using single-layer samples. As-deposited multi-layer structures can be perfectly modeled using the effective medium theory. However, annealed multi-layers demonstrated a significant diffusion of elements that was confirmed by medium energy ion scattering measurements. This fact prevents fitting of such annealed structure either by homogeneous or by periodic multi-layer models.
Ge and As x-ray absorption fine structure spectroscopic study of homopolar bonding, chemical order, and topology in Ge-As-S chalcogenide glasses

International Nuclear Information System (INIS)

Sen, S.; Ponader, C.W.; Aitken, B.G.

2001-01-01

The coordination environments of Ge and As atoms in Ge x As y S 1-x-y glasses with x:y=1:2, 1:1, and 2.5:1 and with wide-ranging S contents have been studied with Ge and As K-edge x-ray absorption fine structure spectroscopy. The coordination numbers of Ge and As atoms are found to be 4 and 3, respectively, in all glasses. The first coordination shells of Ge and As atoms in the stoichiometric and S-excess glasses consist of S atoms only, implying the preservation of chemical order at least over the length scale of the first coordination shell. As-As homopolar bonds are found to appear at low and intermediate levels of S deficiency, whereas Ge-Ge bonds are formed only in strongly S-deficient glasses indicating clustering of metal atoms and violation of chemical order in S-deficient glasses. The composition-dependent variation in chemical order in chalcogenide glasses has been hypothesized to result in topological changes in the intermediate-range structural units. The role of such topological transitions in controlling the structure-property relationships in chalcogenide glasses is discussed
Architecture of Columnar Nacre, and Implications for Its Formation Mechanism

International Nuclear Information System (INIS)

Metzler, Rebecca A.; Olabisi, Ronke M.; Coppersmith, Susan N.; Gilbert, P. U. P. A.; Abrecht, Mike; Frazer, Bradley H.; Ariosa, Daniel; Johnson, Christopher J.

2007-01-01

We analyze the structure of Haliotis rufescens nacre, or mother-of-pearl, using synchrotron spectromicroscopy and x-ray absorption near-edge structure spectroscopy. We observe imaging contrast between adjacent individual nacre tablets, arising because different tablets have different crystal orientations with respect to the radiation's polarization vector. Comparing previous data and our new data with models for columnar nacre growth, we find the data are most consistent with a model in which nacre tablets are nucleated by randomly distributed sites in the organic matrix layers
Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

International Nuclear Information System (INIS)

Zhang, Rui; Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi

2013-01-01

The ultrathin GeO x /Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al 2 O 3 /Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO x layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of ∼0.3 nm with an increase in the GeO x thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of ∼0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO x /Ge interfaces on Ge (100) and (111) surfaces.
Several new phases in RE-Mg-Ge systems (RE = rare earth metal) - syntheses, structures, and chemical bonding

International Nuclear Information System (INIS)

Suen, Nian-Tzu; Bobev, Svilen

2012-01-01

Reported are the synthesis and structural characterization of Ce_5Mg_8Ge_8 (its own structure type), CeMg_2_-_xGe_2_+_x (BaAl_4-type structure), RE_4Mg_7Ge_6 (RE = Ce-Nd, Sm; La_4Mg_7Ge_6-type structure), and RE_4Mg_5Ge_6 (RE = Ce, Pr; Tm_4Zn_5Ge_6-type structure). The structures of these compounds have been established by single-crystal and powder X-ray diffraction. These compounds are closely related to each other not only in their chemical compositions but also in their structures. A common structural feature of all are MgGe_4 tetrahedra, which are connected by corner- and/or edge-sharing into complex polyanionic frameworks with the rare-earth metal atoms filling the ''empty'' space. The structures are compared to known types of structures, and we have investigated the chemical bonding in Ce_5Mg_8Ge_8 with electronic structure calculations, which were carried out by the tight-bonding linear muffin-tin orbital (TB-LMTO) method. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
GeP and (Ge1−xSnx)(P1−yGey) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

International Nuclear Information System (INIS)

Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

2015-01-01

GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge 0.93(3) P 0.95(1) Sn 0.12(3) : a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder
Glass formation and the third harmonic generation of Cu{sub 2}Se–GeSe{sub 2}–As{sub 2}Se{sub 3} glasses

Energy Technology Data Exchange (ETDEWEB)

Reshak, A. H., E-mail: maalidph@yahoo.co.uk [New Technologies-Research Centre, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Klymovych, O. S.; Zmiy, O. F. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, Voli Av. 13, 43025 Lutsk (Ukraine); Myronchuk, G. L.; Zamuruyeva, O. V. [Department of Physics, Lesya Ukrainka Eastern European National University, Voli Av. 13, 43025 Lutsk (Ukraine); Alahmed, Z. A. [Department of Physics and Astronomy, King Saud University, Riyadh 11451 (Saudi Arabia); Chyský, J.; Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia)

2014-10-14

We have performed the investigation of the nonlinear optical properties namely the third harmonic generation (THG) of the glass-formation region in the Cu{sub 2}Se–GeSe{sub 2}–As{sub 2}Se{sub 3} system. The samples were synthesized by direct single-temperature method from high-purity elementary substances. We have found that the value of disorder parameter Δ depends on the composition of the glassy alloys. The measurements show that increasing the Cu{sub 2}Se concentration leads to increased slope of the absorption edge, which may be explained by the decrease of the height of random potential relief for the electrons in the tails of the state density which border the band edges. A very sharp increase in the THG at low temperature was observed. Significant enhancement in THG was obtained with decreasing the energy gap, which agreed well with the nonlinear optical susceptibilities obtained from other glasses.
Revisiting local structural changes in GeO2 glass at high pressure.

Science.gov (United States)

Dong, Juncai; Yao, HuRong; Guo, Zhiying; Jia, Quanjie; Wang, Yan; An, Pengfei; Gong, Yu; Liang, Yaxiang; Chen, Dongliang

2017-09-18

Despite the great importance in fundamental and industrial fields, understanding structural changes for pressure-induced polyamorphism in network-forming glasses remains a formidable challenge. Here, we revisited the local structural transformations in GeO2 glass up to 54 GPa using x-ray absorption fine structure (XAFS) spectroscopy via a combination diamond anvil cell and polycapillary half-lens. Three polyamorphic transitions can be clearly identified by XAFS structure refinement. First, a progressive increase of the nearest Ge-O distance and bond disorder to a maximum at ~5-16 GPa, in the same pressure region of previously observed tetrahedral-octahedral transformation. Second, a markedly decrease of the nearest Ge-O distance at ~16-22.6 GPa but a slight increase at ~22.6-32.7 GPa, with a concomitant decrease of bond disorder. This stage can be related to a second-order-like transition from less dense to dense octahedral glass. Third, another decrease in the nearest Ge-O distance at ~32.7-41.4 GPa but a slight increase up to 54 GPa, synchronized with a gradual increase of bond disorder. This stage provides strong evidence for ultrahigh-pressure polyamorphism with coordination number >6. Furthermore, cooperative modification is observed in more distant shells. Those results provide a unified local structural picture for elucidating the polyamorphic transitions and densification process in GeO2 glass. © 2017 IOP Publishing Ltd.
Revisiting local structural changes in GeO2 glass at high pressure.

Science.gov (United States)

Dong, Juncai; Yao, Hurong; Guo, Zhiying; Jia, Quanjie; Wang, Yan; An, Pengfei; Gong, Yu; Liang, Yaxiang; Chen, Dongliang

2017-10-20

Despite the great importance in fundamental and industrial fields, understanding structural changes for pressure-induced polyamorphism in network-forming glasses remains a formidable challenge. Here, we revisited the local structural transformations in GeO 2 glass up to 54 GPa using x-ray absorption fine structure (XAFS) spectroscopy via a combination diamond anvil cell and polycapillary half-lens. Three polyamorphic transitions can be clearly identified by XAFS structure refinement. First, a progressive increase of the nearest Ge-O distance and bond disorder to a maximum at ~5-16 GPa, in the same pressure region of previously observed tetrahedral-octahedral transformation. Second, a marked decrease of the nearest Ge-O distance at ~16-22.6 GPa but a slight increase at ~22.6-32.7 GPa, with a concomitant decrease of bond disorder. This stage can be related to a second-order-like transition from less dense to dense octahedral glass. Third, another decrease in the nearest Ge-O distance at ~32.7-41.4 GPa but a slight increase up to 54 GPa, synchronized with a gradual increase of bond disorder. This stage provides strong evidence for ultrahigh-pressure polyamorphism with coordination number >6. Furthermore, cooperative modification is observed in more distant shells. Those results provide a unified local structural picture for elucidating the polyamorphic transitions and densification process in GeO 2 glass.

Determination of a new structure type in the Sc-Fe-Ge-Sn system

Energy Technology Data Exchange (ETDEWEB)

Brgoch, Jakoah [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Ran, Sheng [Ames Laboratory, US Department of Energy, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Thimmaiah, Srinivasa [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Ames Laboratory, US Department of Energy, Ames, IA 50011 (United States); Canfield, Paul C. [Ames Laboratory, US Department of Energy, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Miller, Gordon J., E-mail: gmiller@iastate.edu [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Ames Laboratory, US Department of Energy, Ames, IA 50011 (United States)

2013-01-05

Highlights: Black-Right-Pointing-Pointer A new structure type with the composition Sc{sub 4}Fe{sub 5}Ge{sub 6.10(3)}Sn{sub 1.47(2)}. Black-Right-Pointing-Pointer Crystallizes in the space group Immm (No. 71, oI144). Black-Right-Pointing-Pointer Sample obtained using a reactive Sn flux. Black-Right-Pointing-Pointer Electronic structure calculations indicate polar intermetallic bonding network. - Abstract: A new structure type has been discovered in the system Sc-Fe-Ge-Sn by employing Sn as a flux medium. According to single crystal X-ray diffraction, the new structure has a composition of Sc{sub 4}Fe{sub 5}Ge{sub 6.10(3)}Sn{sub 1.47(2)} and crystallizes in the space group Immm (No. 71, oI144) with lattice parameters of a = 5.230(1) A, b = 13.467(3) A, and c = 30.003(6) A. The structure is composed of square anti-prismatic clusters that are condensed into zig-zag chains along the [0 1 0] direction. These chains are further condensed through a split Sn/Ge position, forming a three-dimensional network. Magnetization measurements indicate an antiferromagnetic phase transition near 240 K. Electronic structure calculations identified the most favorable bonding network in this new system. Using crystal orbital Hamilton population (COHP) curves and their integrated values (ICOHP), a polar intermetallic bonding network involving Sc-Ge as well as Fe-Sn and Fe-Ge contacts can be assigned to this new structure type.
Structure cristalline du composé intermétallique Ni18Ge12

Directory of Open Access Journals (Sweden)

Mohammed Kars

2015-03-01

Full Text Available Single crystals of octadecanickel dodecagermanide were grown by chemical transport reaction. The intermetallic compound crystallizes in a superstructure of the hexagonal NiAs type (B8 type. All atoms in the asymmetric unit lie on special positions except one Ni atom (two Ni atoms have site symmetry -6.. and another one has site symmetry .2. while the Ge atoms have site symmetries 32., m.. and 3... In the structure, the Ni atoms are arranged in 11- or 13-vertex polyhedra (CN = 11–13. The coordination polyhedra of the Ge atoms are bicapped square antiprisms (CN = 10 or 11-vertex polyhedra (CN = 11. The structure exhibits strong Ge...Ni interactions, but no close Ge...Ge contacts are observed. The Ni atoms with CN = 13 form infinite chains along [001] with an Ni—Ni distance of 2.491 (2 Å.
Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Energy Technology Data Exchange (ETDEWEB)

Sawano, K., E-mail: sawano@tcu.ac.jp [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Hoshi, Y.; Kubo, S. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Arimoto, K.; Yamanaka, J.; Nakagawa, K. [Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu (Japan); Hamaya, K. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka (Japan); Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka (Japan); Shiraki, Y. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan)

2016-08-31

Structural and electrical properties of a Ge(111) layer directly grown on a Si(111) substrate are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer, where strain-relieving dislocations are confined close to a Ge/Si interface. Consequently, a density of holes, which unintentionally come from crystal defects, is highly suppressed below 4 × 10{sup 16} cm{sup −3}, which leads to significantly high hole Hall mobility exceeding 1500 cm{sup 2}/Vs at room temperature. By layer transfer of the grown Ge layer, we also fabricate a Ge(111)-on-Insulator, which is a promising template for high-performance Ge-based electronic and photonic devices. - Highlights: • A high-quality Ge layer is epitaxially grown on a Si(111) by two-step growth manner. • Growth conditions, such as growth temperatures, are optimized. • Very high hole mobility is obtained from Ge(111) grown on Si(111). • High-quality thin Ge-on-Insulator with (111) orientation is obtained.
Distortion of Local Atomic Structures in Amorphous Ge-Sb-Te Phase Change Materials

Science.gov (United States)

Hirata, A.; Ichitsubo, T.; Guan, P. F.; Fujita, T.; Chen, M. W.

2018-05-01

The local atomic structures of amorphous Ge-Sb-Te phase-change materials have yet to be clarified and the rapid crystal-amorphous phase change resulting in distinct optical contrast is not well understood. We report the direct observation of local atomic structures in amorphous Ge2Sb2Te5 using "local" reverse Monte Carlo modeling dedicated to an angstrom-beam electron diffraction analysis. The results corroborated the existence of local structures with rocksalt crystal-like topology that were greatly distorted compared to the crystal symmetry. This distortion resulted in the breaking of ideal octahedral atomic environments, thereby forming local disordered structures that basically satisfied the overall amorphous structure factor. The crystal-like distorted octahedral structures could be the main building blocks in the formation of the overall amorphous structure of Ge-Sb-Te.
Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

International Nuclear Information System (INIS)

Kajiyama, Hiroshi

1988-01-01

Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)
Internal Flow Structures in Columnar Jointed Basalt from HREPPHÓLAR, Iceland

Science.gov (United States)

Mattsson, H. B.; Bosshard, S. A.; Hetenyi, G.; Almqvist, B.; Hirt, A. M.; Caricchi, L.; Caddick, M.

2010-12-01

Columnar jointed basalt from Hrepphólar in southern Iceland display spectacular internal structures when cut. These structures follow the overall orientation of the columns and display semi-circular to circular features when cross-cut. It was previously believed that these internal structures formed as a result of alteration due to circulation of meteoric water within the column-bounding fractures after emplacement. However, new field observations of viscous fingering within the columns and the fact that approximately 80% of the semi-circular features are found within the column whereas the remaining 20% are cut by the column-bounding fractures clearly shows that these internal structures must have formed prior to crack-propagation (and are thus primary features). Here we present the results of textural and petrological analyses through a cross-section of a column, in combination with magnetic susceptibility and anisotropy measurements of the same samples. The variation in textures and geochemistry can be attributed to the presence of diffuse banding caused by variations in the modal proportions of the main phenocryst phases (i.e., plagioclase, clinopyroxene, olivine and titanomagnetite/ilmenite). Orientation of plagioclase laths and titanomagnetite crystals (based on measurements in thin sections and AMS-measurements) are consistent with vertical flow alignment. Nowhere in the column can evidence for downwards flow be found (excluding the possibility of small-scale convection cells generating these features). It is proposed here, that the volume decrease associated with solidification (typically 10-15 vol.% for basaltic systems) and the increasing weight of the overlying crust results in upwelling of partially crystallized material into the centre of the columns. Preliminary numerical modeling indicates that the isotherms within individual columns become steeper with increasing depth in a lava flow (allowing for larger displacement distances). We propose that
Structural, electronic and optical characteristics of SrGe{sub 2} and BaGe{sub 2}: A combined experimental and computational study

Energy Technology Data Exchange (ETDEWEB)

Kumar, Mukesh, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

2015-05-05

Highlights: • Charge transfer between cation and anion atoms observed first time in digermandies. • Study yields a band gap of ∼1 eV and ∼0.85 eV for SrGe{sub 2} and BaGe{sub 2}, respectively. • Band gap decrease with the application of hydrostatic pressure. • Localized cation d states lead to a large absorption coefficient (>7.5 × 10{sup 4} cm{sup −1}). - Abstract: SrGe{sub 2} and BaGe{sub 2} were characterized for structural, electronic and optical properties by means of diffuse reflectance and first-principles density functional theory. These two germanides crystallize in the BaSi{sub 2}-type structure, in which Ge atoms are arranged in tetrahedral configuration. The calculation indicates a charge transfer from Sr (or Ba) atoms to Ge atoms along with the formation of covalent bonds among Ge atoms in Ge tetrahedral. The computational results confirm that these two germanies are Zintl phase described as Sr{sub 2}Ge{sub 4} (or Ba{sub 2}Ge{sub 4}), which are characterized by positively charged [Sr{sub 2} (or Ba{sub 2})]{sup 2.59+} and negatively charged [Ge{sub 4}]{sup 2.59−} units acting as cation and anion, respectively. These compounds are indirect gap semiconductors with band gap estimated to be E{sub g} = 1.02 eV for BaGe{sub 2} and E{sub g} = 0.89 eV for SrGe{sub 2} which are in good agreement with our experimental measured values (E{sub g} = 0.97 eV for BaGe{sub 2} and E{sub g} = 0.82 eV for SrGe{sub 2}). Our calculations demonstrate that the band gaps are narrowed by application of hydrostatic pressure; the pressure coefficients are estimated to be −10.54 for SrGe{sub 2} and −10.06 meV/GPa for BaGe{sub 2}. Optical properties reveal that these compounds have large absorption coefficient (∼7.5 × 10{sup 4} cm{sup −1} at 1.5 eV) and the estimated high frequency (static) dielectric constant are, ε{sub ∞}(ε{sub 0}) ≈ 12.8(20.97) for BaGe{sub 2} and ε{sub ∞}(ε{sub 0}) ≈ 14.27(22.87) for SrGe{sub 2}.
Columnar cell lesions of the canine mammary gland: pathological features and immunophenotypic analysis

Directory of Open Access Journals (Sweden)

Cassali Geovanni D

2010-02-01

Full Text Available Abstract Background It has been suggested that columnar cell lesions indicate an alteration of the human mammary gland involved in the development of breast cancer. They have not previously been described in canine mammary gland. The aim of this paper is describe the morphologic spectrum of columnar cell lesions in canine mammary gland specimens and their association with other breast lesions. Methods A total of 126 lesions were subjected to a comprehensive morphological review based upon the human breast classification system for columnar cell lesions. The presence of preinvasive (epithelial hyperplasia and in situ carcinoma and invasive lesions was determined and immunophenotypic analysis (estrogen receptor (ER, progesterone receptor (PgR, high molecular weight cytokeratin (34βE-12, E-cadherin, Ki-67, HER-2 and P53 was perfomed. Results Columnar cell lesions were identified in 67 (53.1% of the 126 canine mammary glands with intraepithelial alterations. They were observed in the terminal duct lobular units and characterized at dilated acini may be lined by several layers of columnar epithelial cells with elongated nuclei. Of the columnar cell lesions identified, 41 (61.2% were without and 26 (38.8% with atypia. Association with ductal hyperplasia was observed in 45/67 (67.1%. Sixty (89.5% of the columnar cell lesions coexisted with neoplastic lesions (20 in situ carcinomas, 19 invasive carcinomas and 21 benign tumors. The columnar cells were ER, PgR and E-cadherin positive but negative for cytokeratin 34βE-12, HER-2 and P53. The proliferation rate as measured by Ki-67 appeared higher in the lesions analyzed than in normal TDLUs. Conclusions Columnar cell lesions in canine mammary gland are pathologically and immunophenotypically similar to those in human breast. This may suggest that dogs are a suitable model for the comparative study of noninvasive breast lesions.
Columnar cell lesions of the canine mammary gland: pathological features and immunophenotypic analysis

International Nuclear Information System (INIS)

Ferreira, Enio; Gobbi, Helenice; Saraiva, Bruna S; Cassali, Geovanni D

2010-01-01

It has been suggested that columnar cell lesions indicate an alteration of the human mammary gland involved in the development of breast cancer. They have not previously been described in canine mammary gland. The aim of this paper is describe the morphologic spectrum of columnar cell lesions in canine mammary gland specimens and their association with other breast lesions. A total of 126 lesions were subjected to a comprehensive morphological review based upon the human breast classification system for columnar cell lesions. The presence of preinvasive (epithelial hyperplasia and in situ carcinoma) and invasive lesions was determined and immunophenotypic analysis (estrogen receptor (ER), progesterone receptor (PgR), high molecular weight cytokeratin (34βE-12), E-cadherin, Ki-67, HER-2 and P53) was perfomed. Columnar cell lesions were identified in 67 (53.1%) of the 126 canine mammary glands with intraepithelial alterations. They were observed in the terminal duct lobular units and characterized at dilated acini may be lined by several layers of columnar epithelial cells with elongated nuclei. Of the columnar cell lesions identified, 41 (61.2%) were without and 26 (38.8%) with atypia. Association with ductal hyperplasia was observed in 45/67 (67.1%). Sixty (89.5%) of the columnar cell lesions coexisted with neoplastic lesions (20 in situ carcinomas, 19 invasive carcinomas and 21 benign tumors). The columnar cells were ER, PgR and E-cadherin positive but negative for cytokeratin 34βE-12, HER-2 and P53. The proliferation rate as measured by Ki-67 appeared higher in the lesions analyzed than in normal TDLUs. Columnar cell lesions in canine mammary gland are pathologically and immunophenotypically similar to those in human breast. This may suggest that dogs are a suitable model for the comparative study of noninvasive breast lesions
Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

Science.gov (United States)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.
Crystallographic and magnetic structure of the novel compound ErGe 1.83

Science.gov (United States)

Oleksyn, O.; Schobinger-Papamantellos, P.; Ritter, C.; de Groot, C. H.; Buschow, K. H. J.

1997-02-01

The crystal structure and the magnetic ordering of the novel orthorhombic compound ErGe 2-x has been studied by neutron powder diffraction and magnetic measurements. The crystal structure belongs to the DyGe 1.85-type (space group Cmc2 1)·ErGe 2-x ( x = 0.17 (2)) orders antiferromagnetically below TN = 6 K and displays a metamagnetic behaviour. The magnetic cell has the same size as the chemical unit cell ( q = 0 ). The magnetic space group is Cmc2 1 (Sh 36173). At T = 1.5 K the magnetic moments of the two erbium sites have the same ordered magnetic moment values of 7.63 (6) μB/Er and are antiferromagnetically coupled leading to an uniaxial structure along the a direction.
Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.

Science.gov (United States)

Rouifed, Mohamed Said; Chaisakul, Papichaya; Marris-Morini, Delphine; Frigerio, Jacopo; Isella, Giovanni; Chrastina, Daniel; Edmond, Samson; Le Roux, Xavier; Coudevylle, Jean-René; Vivien, Laurent

2012-10-01

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.
Structure of Se-rich As-Se glasses by high-resolution x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Golovchak, R.; Kovalskiy, A.; Miller, A. C.; Jain, H.; Shpotyuk, O.

2007-01-01

To establish the validity of various proposed structural models, we have investigated the structure of the binary As x Se 100-x chalcogenide glass family (x≤40) by high-resolution x-ray photoelectron spectroscopy. From the composition dependence of the valence band, the contributions to the density of states from the 4p lone pair electrons of Se and the 4p bonding states and 4s electrons of Se and As are identified in the top part of the band. The analysis of Se 3d and As 3d core-level spectra supports the so-called chain crossing model for the atomic structure of Se-rich As x Se 100-x bulk glasses. The results also indicate small deviations (∼3-8%) from this model, especially for glass compositions with short Se chains (25 40 Se 60 and of Se-Se-Se fragments in a glass with composition x=30 is established
Characterization of Ge Nano structures Embedded Inside Porous Silicon for Photonics Application

International Nuclear Information System (INIS)

Rahim, A.F.A.; Hashim, M.R.; Rahim, A.F.A.; Ali, N.K.

2011-01-01

In this work we prepared germanium nano structures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A Ge layer was then deposited onto the PS by thermal evaporation. This was followed by deposition of Si layer by thermal evaporation and anneal at 650 degree Celsius for 30 min. The process was completed by Ni metal deposition using thermal evaporator followed by metal annealing of 400 degree Celsius for 10 min to form metal semiconductor metal (MSM) photodetector. Structural analysis of the samples was performed using energy dispersive x-ray analysis (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). EDX spectrum suggests the presence of Ge inside the pores structure. Raman spectrum showed that good crystalline structure of Ge can be produced inside silicon pores with a phase with the diamond structure by (111), (220) and (400) reflections. Finally current-voltage (I-V) measurement of the MSM photodetector was carried out and showed lower dark currents compared to that of Si control device. Interestingly the device showed enhanced current gain compared to Si device which can be associated with the presence of Ge nano structures in the porous silicon. (author)
Physiological and phenotypic variations between columnar and standard apple (Malus x domestica Borkh.) trees

DEFF Research Database (Denmark)

Talwara, Susheela

Columnar apple trees have very determined growth habit, short internodes, nearly absent branching and can be planted densely in the orchards to obtain higher yields. Such tree architecture provides a possibility for automation and mechanization in agriculture and hence lowering the labour cost wh...... the variations between columnar and standard apple trees. This knowledge provides a better insight on the production abilities of the columnar apple trees which may be useful for future crop improvement strategies.......Columnar apple trees have very determined growth habit, short internodes, nearly absent branching and can be planted densely in the orchards to obtain higher yields. Such tree architecture provides a possibility for automation and mechanization in agriculture and hence lowering the labour cost...... on the physiological and phenotypic characteristics of the columnar apple trees were made by comparing them with the standard traditionally grown non-columnar apple trees. Data from the leaves morphological and anatomical studies and from various physiological investigations have been assembled to compare...
Modeling of columnar and equiaxed solidification of binary mixtures

International Nuclear Information System (INIS)

Roux, P.

2005-12-01

This work deals with the modelling of dendritic solidification in binary mixtures. Large scale phenomena are represented by volume averaging of the local conservation equations. This method allows to rigorously derive the partial differential equations of averaged fields and the closure problems associated to the deviations. Such problems can be resolved numerically on periodic cells, representative of dendritic structures, in order to give a precise evaluation of macroscopic transfer coefficients (Drag coefficients, exchange coefficients, diffusion-dispersion tensors...). The method had already been applied for a model of columnar dendritic mushy zone and it is extended to the case of equiaxed dendritic solidification, where solid grains can move. The two-phase flow is modelled with an Eulerian-Eulerian approach and the novelty is to account for the dispersion of solid velocity through the kinetic agitation of the particles. A coupling of the two models is proposed thanks to an original adaptation of the columnar model, allowing for undercooling calculation: a solid-liquid interfacial area density is introduced and calculated. At last, direct numerical simulations of crystal growth are proposed with a diffuse interface method for a representation of local phenomena. (author)
Optical and structural characterization of Ge clusters embedded in ZrO2

OpenAIRE

Agocs, E; Zolnai, Z.; Rossall, A. K.; Van den Berg, Jakob; Fodor, B.; Lehninger, D.; Khomenkova, L.; Ponomaryov, S.; Gudymenko, O.; Yukhymchuk, V.; Kalas, B.; Heitmann, J.; Petrik, P.

2017-01-01

The change of optical and structural properties of Ge nanoclusters in ZrO2 matrix have been investigated by spectroscopic ellipsometry versus annealing temperatures. Radio-frequency top-down magnetron sputtering approach was used to produce the samples of different types, i.e. single-layers of pure Ge, pure ZrO2 and Ge-rich-ZrO2 as well as multi-layers stacked of 40 periods of 5-nm-Ge-rich-ZrO2 layers alternated by 5-nm-ZrO2 ones. Germanium nanoclusters in ZrO2 host were formed by rapid-therm...
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Science.gov (United States)

Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

2008-07-01

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.
Vibrational dynamics and band structure of methyl-terminated Ge(111)

Energy Technology Data Exchange (ETDEWEB)

Hund, Zachary M.; Nihill, Kevin J.; Sibener, S. J., E-mail: s-sibener@uchicago.edu [The James Franck Institute and Department of Chemistry, The University of Chicago, 929 E. 57" t" h Street, Chicago, Illinois 60637 (United States); Campi, Davide; Bernasconi, M. [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Wong, Keith T.; Lewis, Nathan S. [Division of Chemistry and Chemical Engineering, Beckman Institute and Kavli Nanoscience Institute, California Institute of Technology, 210 Noyes Laboratory, 127-72, Pasadena, California 91125 (United States); Benedek, G. [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Donostia International Physics Center (DIPC), Universidad del País Vasco (EHU), 20018 Donostia/San Sebastian (Spain)

2015-09-28

A combined synthesis, experiment, and theory approach, using elastic and inelastic helium atom scattering along with ab initio density functional perturbation theory, has been used to investigate the vibrational dynamics and band structure of a recently synthesized organic-functionalized semiconductor interface. Specifically, the thermal properties and lattice dynamics of the underlying Ge(111) semiconductor crystal in the presence of a commensurate (1 × 1) methyl adlayer were defined for atomically flat methylated Ge(111) surfaces. The mean-square atomic displacements were evaluated by analysis of the thermal attenuation of the elastic He diffraction intensities using the Debye-Waller model, revealing an interface with hybrid characteristics. The methyl adlayer vibrational modes are coupled with the Ge(111) substrate, resulting in significantly softer in-plane motion relative to rigid motion in the surface normal. Inelastic helium time-of-flight measurements revealed the excitations of the Rayleigh wave across the surface Brillouin zone, and such measurements were in agreement with the dispersion curves that were produced using density functional perturbation theory. The dispersion relations for H-Ge(111) indicated that a deviation in energy and lineshape for the Rayleigh wave was present along the nearest-neighbor direction. The effects of mass loading, as determined by calculations for CD{sub 3}-Ge(111), as well as by force constants, were less significant than the hybridization between the Rayleigh wave and methyl adlayer librations. The presence of mutually similar hybridization effects for CH{sub 3}-Ge(111) and CH{sub 3}-Si(111) surfaces extends the understanding of the relationship between the vibrational dynamics and the band structure of various semiconductor surfaces that have been functionalized with organic overlayers.
Vibrational dynamics and band structure of methyl-terminated Ge(111)

International Nuclear Information System (INIS)

th Street, Chicago, Illinois 60637 (United States))" data-affiliation=" (The James Franck Institute and Department of Chemistry, The University of Chicago, 929 E. 57th Street, Chicago, Illinois 60637 (United States))" >Hund, Zachary M.; th Street, Chicago, Illinois 60637 (United States))" data-affiliation=" (The James Franck Institute and Department of Chemistry, The University of Chicago, 929 E. 57th Street, Chicago, Illinois 60637 (United States))" >Nihill, Kevin J.; th Street, Chicago, Illinois 60637 (United States))" data-affiliation=" (The James Franck Institute and Department of Chemistry, The University of Chicago, 929 E. 57th Street, Chicago, Illinois 60637 (United States))" >Sibener, S. J.; Campi, Davide; Bernasconi, M.; Wong, Keith T.; Lewis, Nathan S.; Benedek, G.

2015-01-01

A combined synthesis, experiment, and theory approach, using elastic and inelastic helium atom scattering along with ab initio density functional perturbation theory, has been used to investigate the vibrational dynamics and band structure of a recently synthesized organic-functionalized semiconductor interface. Specifically, the thermal properties and lattice dynamics of the underlying Ge(111) semiconductor crystal in the presence of a commensurate (1 × 1) methyl adlayer were defined for atomically flat methylated Ge(111) surfaces. The mean-square atomic displacements were evaluated by analysis of the thermal attenuation of the elastic He diffraction intensities using the Debye-Waller model, revealing an interface with hybrid characteristics. The methyl adlayer vibrational modes are coupled with the Ge(111) substrate, resulting in significantly softer in-plane motion relative to rigid motion in the surface normal. Inelastic helium time-of-flight measurements revealed the excitations of the Rayleigh wave across the surface Brillouin zone, and such measurements were in agreement with the dispersion curves that were produced using density functional perturbation theory. The dispersion relations for H-Ge(111) indicated that a deviation in energy and lineshape for the Rayleigh wave was present along the nearest-neighbor direction. The effects of mass loading, as determined by calculations for CD 3 -Ge(111), as well as by force constants, were less significant than the hybridization between the Rayleigh wave and methyl adlayer librations. The presence of mutually similar hybridization effects for CH 3 -Ge(111) and CH 3 -Si(111) surfaces extends the understanding of the relationship between the vibrational dynamics and the band structure of various semiconductor surfaces that have been functionalized with organic overlayers

Atomic scale insight into the amorphous structure of Cu doped GeTe phase-change material

International Nuclear Information System (INIS)

Zhang, Linchuan; Sa, Baisheng; Zhou, Jian; Sun, Zhimei; Song, Zhitang

2014-01-01

GeTe shows promising application as a recording material for phase-change nonvolatile memory due to its fast crystallization speed and extraordinary amorphous stability. To further improve the performance of GeTe, various transition metals, such as copper, have been doped in GeTe in recent works. However, the effect of the doped transition metals on the stability of amorphous GeTe is not known. Here, we shed light on this problem for the system of Cu doped GeTe by means of ab initio molecular dynamics calculations. Our results show that the doped Cu atoms tend to agglomerate in amorphous GeTe. Further, base on analyzing the pair correlation functions, coordination numbers and bond angle distributions, remarkable changes in the local structure of amorphous GeTe induced by Cu are obviously seen. The present work may provide some clues for understanding the effect of early transition metals on the local structure of amorphous phase-change compounds, and hence should be helpful for optimizing the structure and performance of phase-change materials by doping transition metals.
Structural transition in Ge growth on Si mediated by sub-monolayer carbon

International Nuclear Information System (INIS)

Itoh, Yuhki; Hatakeyama, Shinji; Washio, Katsuyoshi

2014-01-01

Ge growth on Si mediated by sub-monolayer (ML) carbon (C) covered directly on Si surface was studied. C and Ge layers were grown on Si(100) substrates by using solid-source molecular beam epitaxy system. After Si surface cleaning by heating up to 900 °C, C up to 0.45 ML was deposited and then 10 to 15-nm-thick Ge were deposited. Reflection high energy electron diffraction patterns after sub-ML C deposition changed from streaks to halo depending on C coverage. The Ge dots were formed at low C coverage of 0.08–0.16 ML. Octagonal dots had three same facet planes of (001), (111), and (113) and consisted of the mixture of single crystals with dislocations along [111]. This is due to the event that the incorporation of small amount of C into Si surface gave rise to a strain. As a result, Si surface weaved Si(100) 2 × 1 with Si-C c(4 × 4) and Ge atoms adsorbed selectively on Si(100) 2 × 1 forming dome-shaped dots. A drastic structural transition from dots to films occurred at C coverage of 0.20 ML. The Ge films, consisting of relaxed poly- and amorphous-Ge, formed at C coverage of 0.20–0.45 ML. This is because a large amount of Si-C bonds induced strong compressive strain and surface roughening. In consequence, the growth mode changed from three-dimensional (3D) to 2D due to the reduction of Ge diffusion length. - Highlights: • Ge growth on Si mediated by sub-monolayer (ML) carbon (C) was studied. • Ge dots were formed at low C coverage of 0.08–0.16 ML. • Drastic structural transition from dots to films occurred at C coverage of 0.20 ML. • Ge films consisted of relaxed poly- and amorphous-Ge at C coverage of 0.20–0.45 ML
Electronic structure of LaFe{sub 2}X{sub 2} (X = Si,Ge)

Energy Technology Data Exchange (ETDEWEB)

Hase, I., E-mail: i.hase@aist.go.jp [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan); Yanagisawa, T. [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan)

2011-11-15

We have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which well explains the result of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. D(E{sub F}) strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom, as also found in iron-pnictide system. Recently found iron-pnictide superconductor (Ba,K)Fe{sub 2}As{sub 2} and the heavy-fermion superconductor CeCu{sub 2}Si{sub 2} both have the same crystal structure. In this paper we have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. These compounds also have the same crystal structure and closely related to both of (Ba,K)Fe{sub 2}As{sub 2} and CeRu{sub 2}Ge{sub 2}. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which are already found that they well explain the results of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. The density of states at the Fermi level strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom from the two-dimensional Fe plane, as also found in iron-pnictide system. The electronic specific heat coefficient is 11.8 mJ/mol K{sup 2} for LaFe{sub 2}Si{sub 2} and 12.5 mJ/mol K{sup 2} for LaFe{sub 2}Ge{sub 2}, which is about 1/3 and 1/2 of experimental results, respectively.
Effect of Suspension Plasma-Sprayed YSZ Columnar Microstructure and Bond Coat Surface Preparation on Thermal Barrier Coating Properties

Science.gov (United States)

Bernard, Benjamin; Quet, Aurélie; Bianchi, Luc; Schick, Vincent; Joulia, Aurélien; Malié, André; Rémy, Benjamin

2017-08-01

Suspension plasma spraying (SPS) is identified as promising for the enhancement of thermal barrier coating (TBC) systems used in gas turbines. Particularly, the emerging columnar microstructure enabled by the SPS process is likely to bring about an interesting TBC lifetime. At the same time, the SPS process opens the way to a decrease in thermal conductivity, one of the main issues for the next generation of gas turbines, compared to the state-of-the-art deposition technique, so-called electron beam physical vapor deposition (EB-PVD). In this paper, yttria-stabilized zirconia (YSZ) coatings presenting columnar structures, performed using both SPS and EB-PVD processes, were studied. Depending on the columnar microstructure readily adaptable in the SPS process, low thermal conductivities can be obtained. At 1100 °C, a decrease from 1.3 W m-1 K-1 for EB-PVD YSZ coatings to about 0.7 W m-1 K-1 for SPS coatings was shown. The higher content of porosity in the case of SPS coatings increases the thermal resistance through the thickness and decreases thermal conductivity. The lifetime of SPS YSZ coatings was studied by isothermal cyclic tests, showing equivalent or even higher performances compared to EB-PVD ones. Tests were performed using classical bond coats used for EB-PVD TBC coatings. Thermal cyclic fatigue performance of the best SPS coating reached 1000 cycles to failure on AM1 substrates with a β-(Ni,Pt)Al bond coat. Tests were also performed on AM1 substrates with a Pt-diffused γ-Ni/γ'-Ni3Al bond coat for which more than 2000 cycles to failure were observed for columnar SPS YSZ coatings. The high thermal compliance offered by both the columnar structure and the porosity allowed the reaching of a high lifetime, promising for a TBC application.
Low-temperature structure and Fermi surface of (La,Ce)TiGe{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Foerster, Tobias; Grasemann, Jacob; Uhlarz, Marc; Wosnitza, Jochen [Dresden High Magnetic Field Laboratory (HLD), Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Rosner, Helge; Stockert, Oliver [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Kittler, Wolfram; Loehneysen, Hilbert von [Karlsruhe Institute of Technology, Karlsruhe (Germany); Fritsch, Veronika [Institut fuer Physik, Universitaet Augsburg, Augsburg (Germany)

2016-07-01

CeTiGe{sub 3} presents the rare case of a ferromagnetically (T{sub C} ∼ 14 K) ordered Kondo-lattice compound and is probably the first known example of an intermetallic hexagonal perovskite of the BaNiO{sub 3} structure type. LaTiGe{sub 3} may be used as its nonmagnetic reference, since both compounds crystallize in the same crystal structure. To clarify the interplay between structural, localized, and itinerant degrees of freedom an accurate knowledge of the electronic band structure is necessary. Here, we present a detailed electronic-structure study of both compounds applying full potential density functional calculations. Since the Ge's atomic position couples strongly to the band structure at the Fermi energy, a low-temperature, high-resolution structure refinement was made. We attempt to separate the influence of different parameters on the topology of the respective Fermi surfaces and will compare our results with de Haas-van Alphen measurements.
Large effect of columnar defects on the thermodynamic properties of Bi2Sr2CaCu2O8 single crystals

Science.gov (United States)

van der Beek, C. J.; Konczykowski, M.; Li, T. W.; Kes, P. H.; Benoit, W.

1996-07-01

The introduction of columnar defects by irradiation with 5.8-GeV Pb ions is shown to affect significantly the reversible magnetic properties of Bi2Sr2CaCu2O8+δ single crystals. Notably, the suppression of superconducting fluctuations on length scales greater than the separation between columns leads to the disappearance of the ``crossing point'' in the critical fluctuation regime. At lower temperatures, the strong modification of the vortex energy due to pinning leads to an important change of the reversible magnetization. The analysis of the latter permits the direct determination of the pinning energy.
Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

Science.gov (United States)

Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

2017-12-01

Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.
Structure and Magnetism of Mn5Ge3 Nanoparticles

Directory of Open Access Journals (Sweden)

Onur Tosun

2018-04-01

Full Text Available In this work, we investigated the magnetic and structural properties of isolated Mn5Ge3 nanoparticles prepared by the cluster-beam deposition technique. Particles with sizes between 7.2 and 12.6 nm were produced by varying the argon pressure and power in the cluster gun. X-ray diffraction (XRDand selected area diffraction (SAD measurements show that the nanoparticles crystallize in the hexagonal Mn5Si3-type crystal structure, which is also the structure of bulk Mn5Ge3. The temperature dependence of the magnetization shows that the as-made particles are ferromagnetic at room temperature and have slightly different Curie temperatures. Hysteresis-loop measurements show that the saturation magnetization of the nanoparticles increases significantly with particle size, varying from 31 kA/m to 172 kA/m when the particle size increases from 7.2 to 12.6 nm. The magnetocrystalline anisotropy constant K at 50 K, determined by fitting the high-field magnetization data to the law of approach to saturation, also increases with particle size, from 0.4 × 105 J/m3 to 2.9 × 105 J/m3 for the respective sizes. This trend is mirrored by the coercivity at 50 K, which increases from 0.04 T to 0.13 T. A possible explanation for the magnetization trend is a radial Ge concentration gradient.
Synthesis and crystal structure of the rare earth borogermanate EuGeBO{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Chi, Yang; Zhuang, Yan; Guo, Sheng-Ping [Yangzhou Univ., Jiangsu (China). College of Chemistry and Chemical Engineering

2017-03-01

The synthesis and crystal structure of the rare earth borogermanate EuGeBO{sub 5} are reported. It is synthesized by high-temperature solid-state reaction and crystallizes in the monoclinic space group P2{sub 1}/c (no. 14) with the unit cell parameters a=4.8860(5), b=7.5229(8), c=9.9587(10) Aa, and β=91.709(3) . Its crystal structure features a polyanion-type layer (GeBO{sub 5}){sup 3-} constructed by BO{sub 4} and GeO{sub 4} tetrahedra connected alternatingly. Eu{sup 3+} ions are located in cavities and are coordinated by eight O atoms. Various structures of the related compounds REMM'O{sub 5} (RE=rare earth metal; M=Si, Ge, and Sn; M'=B, Al, and Ga) are also discussed.
Results of a search for the neutrinoless double beta decay of 76Ge to the first excited state of 76Se

International Nuclear Information System (INIS)

Morales, A.; Morales, J.; Nunez-Lagos, R.; Puimedon, J.; Villar, J.A.; Larrea, A.

1988-01-01

A search for the neutrinoless double beta decay of 76 Ge to the first excited state E=559.1 KeV of 76 Se has been carried out in the Frejus tunnel using a coincidence technique between Ge and NaI detectors. No peak has been observed in the electron energy spectrum at the value of 1482 KeV. That implies a half-life lower limit of 6 x 10 22 years. However the experimental data display a coincidence, at the level of 2.5 σ, between an energy deposition of 1483.7 ± 0.5 KeV in the Ge detector and 558 ± 15 KeV in the NaI detector. The main features of such a coincidence effect are analysed and, in spite of its small statistical significance, its possible interpretation is discussed
Structural stability, electronic and magnetic behaviour of spin-polarized YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) Heusler alloys

Energy Technology Data Exchange (ETDEWEB)

Rasool, Muhammad Nasir, E-mail: nasir4iub@gmail.com [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan); Hussain, Altaf, E-mail: altafiub@yahoo.com [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan); Javed, Athar [Department of Physics, University of the Punjab, Lahore, 54590 (Pakistan); Khan, Muhammad Azhar; Iqbal, F. [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan)

2016-11-01

The structural stability, electronic and magnetic behaviour of YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) Heusler alloys have been studied by first principle approach. Generalized gradient approximation (GGA) based on density functional theory (DFT) has been applied to investigate the properties of quaternary Heusler alloys. The YCoVSi, YCoVGe, YCoTiSi and YCoTiGe Heusler alloys of Type-3 structure are found to be stable in spin-polarized/magnetic phase. The YCoVSi and YCoVGe alloys exhibit nearly spin gapless semiconductor (SGS) behaviour while YCoTiSi and YCoTiGe alloys show half-metallic ferromagnetic (HMF) behaviour. For YCoVSi, YCoVGe, YCoTiSi and YCoTiGe alloys, the calculated energy band gaps in spin down (↓) channel are 0.60, 0.54, 0.68 and 0.44 eV, respectively. The YCoVZ and YCoTiZ alloys are found to have integral value of total magnetic moment (M{sub T}), thus obeying the Slater-Pauling rule, M{sub T} = (N{sub v}–18)μ{sub B}. - Highlights: • Four Heusler alloys i.e. YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) are studied. • Type-3 crystal structure of all four alloys is stable in magnetic phase. • The compressibility (S) follows the order: S{sub YCoVSi} > S{sub YCoTiSi} > S{sub YCoVGe} > S{sub YCoTiGe}. • Half metallic ferromagnetic behaviour is observed in all four alloys. • All four alloys obey the Slater-Pauling rule, M{sub T} = (N{sub v} – 18)μ{sub B}.
Determination and analysis of optical constants for Ge{sub 15}Se{sub 60}Bi{sub 25} thin films

Energy Technology Data Exchange (ETDEWEB)

Atyia, H.E., E-mail: hebaelghrip@hotmail.com [Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Physics Department, Faculty of Applied Medical Science at Turabah, Taif University, Turabah (Saudi Arabia); Hegab, N.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt)

2014-12-01

Thin films of Ge{sub 15}Se{sub 60}Bi{sub 25} were deposited, at room temperature, on glass substrates by thermal evaporation technique. The optical reflectance and transmittance of amorphous Ge{sub 15}Se{sub 60}Bi{sub 25} films were measured at normal incident in the wavelength range (500–2500 nm). The optical constants, the refractive index n and the absorption index k, were determined and analyzed according to different approximate methods using the transmittance measurements only and accurate method using the transmittance and reflectance measurements. Analysis of the absorption index k data reveal the values of the optical band gap E{sub g}{sup opt}, the width of tails E{sub e} and the type of transitions. Some optical parameters such as, high frequency dielectric constant ε{sub ∞}, dispersion parameters (oscillation energy E{sub s} and the dispersion energy E{sub d}), real and imaginary parts of complex dielectric constant (ε{sub 1} and ε{sub 2}) and dielectric parameters (dissipation factor tan δ, dielectric relaxation time τ, the volume and surface energy loss functions) were estimated by analyzing the refractive index n data.The relative errors for all optical parameters depending on different approximate methods were identified and discussed.
SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

Science.gov (United States)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.
Characterization of Cu(In,Ga)(S,Se)2 thin films prepared by sequential evaporation from ternary compounds

International Nuclear Information System (INIS)

Yamaguchi, T.; Hatori, M.; Niiyama, S.; Miyake, Y.

2006-01-01

Cu(In,Ga)(S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In+Ga):(S+Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ]+[CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S+Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga)(S,Se) 2 thin films had large and columnar grains. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)
The structure of collective bands in 72Ge

International Nuclear Information System (INIS)

Tripathy, K.C.; Sahu, R.

1999-01-01

In recent years, extensive experimental studies of nuclei in the mass region A=80 have led to exciting discoveries of large ground state deformations, coexistence of shapes, band crossings, rapid variations of structure with changing nucleon numbers etc. A theoretical study of 72 Ge is presented
A TEM study of strained SiGe/Si and related heteroepitaxial structures

International Nuclear Information System (INIS)

Benedetti, Alessandro

2002-01-01

The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)
Structural and magnetic properties of MnCo1-xVxGe compounds

International Nuclear Information System (INIS)

Meng, G.H.; Tegus, O.; Zhang, W.G.; Song, L.; Huang, J.H.

2010-01-01

The structural and magnetic properties of MnCo 1-x V x Ge (x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10, 0.20 and 0.30) compounds were investigated by means of X-ray diffraction, scanning electron microscopy and magnetization measurements. The MnCo 1-x V x Ge compounds crystallize in the orthorhombic TiNiSi-type crystal structure for x ≤ 0.02 and in the hexagonal Ni 2 In-type structure for x > 0.02. The magnetization measurements show that the MnCo 1-x V x Ge compounds exhibit a complex magnetic behavior. The Curie temperature can be tuned from 360 K to 148 K by increasing x. The maximal magnetic-entropy change is 3.9 J/kg K for x = 0.06 at a field change from 0 to 1.5 T at about 265 K.
Columnar and Equiaxed Solidification of Al-7 wt.% Si Alloys in Reduced Gravity in the Framework of the CETSOL Project

Science.gov (United States)

Zimmermann, G.; Sturz, L.; Nguyen-Thi, H.; Mangelinck-Noel, N.; Li, Y. Z.; Gandin, C.-A.; Fleurisson, R.; Guillemot, G.; McFadden, S.; Mooney, R. P.; Voorhees, P.; Roosz, A.; Ronaföldi, A.; Beckermann, C.; Karma, A.; Chen, C.-H.; Warnken, N.; Saad, A.; Grün, G.-U.; Grohn, M.; Poitrault, I.; Pehl, T.; Nagy, I.; Todt, D.; Minster, O.; Sillekens, W.

2017-08-01

During casting, often a dendritic microstructure is formed, resulting in a columnar or an equiaxed grain structure, or leading to a transition from columnar to equiaxed growth (CET). The detailed knowledge of the critical parameters for the CET is important because the microstructure affects materials properties. To provide unique data for testing of fundamental theories of grain and microstructure formation, solidification experiments in microgravity environment were performed within the European Space Agency Microgravity Application Promotion (ESA MAP) project Columnar-to-Equiaxed Transition in SOLidification Processing (CETSOL). Reduced gravity allows for purely diffusive solidification conditions, i.e., suppressing melt flow and sedimentation and floatation effects. On-board the International Space Station, Al-7 wt.% Si alloys with and without grain refiners were solidified in different temperature gradients and with different cooling conditions. Detailed analysis of the microstructure and the grain structure showed purely columnar growth for nonrefined alloys. The CET was detected only for refined alloys, either as a sharp CET in the case of a sudden increase in the solidification velocity or as a progressive CET in the case of a continuous decrease of the temperature gradient. The present experimental data were used for numerical modeling of the CET with three different approaches: (1) a front tracking model using an equiaxed growth model, (2) a three-dimensional (3D) cellular automaton-finite element model, and (3) a 3D dendrite needle network method. Each model allows for predicting the columnar dendrite tip undercooling and the growth rate with respect to time. Furthermore, the positions of CET and the spatial extent of the CET, being sharp or progressive, are in reasonably good quantitative agreement with experimental measurements.
An investigation of the structure of disordered materials by using neutron diffraction

International Nuclear Information System (INIS)

Petri, I.

1999-01-01

The structure of several semiconducting, metallic and ionic disordered materials was investigated using neutron diffraction and the results were compared with those obtained from recent ab initio molecular dynamics methods. The method of isotopic substitution was applied to measure the full set of partial structure factors, S αβ (Q), for the liquid semiconductor GeSe and the covalent network glass GeSe 2 . Their short range ordering and for GeSe 2 also the intermediate range ordering were identified and a substantial number of 'defects' such as homopolar bonds were detected in both systems. Further, the structure of liquid GeSe 2 with increasing temperature was studied at the total structure factor level. Also, changes in the topology of Ge x Se 1-x glasses in the range 0 ≤ x ≤ 0.4 were observed and investigated by measuring the total structure factors. As far as possible our results were compared with those from molecular dynamics studies. The Ge-Se system was found to serve as a sensitive test-system for these studies, giving an insight into the strengths and limitations of them. For instance, problems are found in the region of the homopolar bonds for g GeGe (r) and for the first sharp diffraction peak in the Bhatia-Thornton concentration-concentration structure factor that could not be reproduced. The structure of liquid lithium was measured and particular attention was paid to the inelasticity and resolution function corrections. The ion-ion and ion-valence electron partial structure factors were obtained and found to be in good agreement with ab initio molecular dynamics studies. The method of first order difference functions in neutron diffraction in combination with H/D substitution was applied to 2 molal solutions of Cu(ClO 4 ) 2 in perchloric acid to measure the Cu-H and, to a first order approximation, the Cu-O partial structure factor. A (4 + 1) distortion of the hydration shell around the Cu 2+ ion was measured. (author)
Laser induced photoluminescence from Ge{sub 28}Se{sub 60}Sb{sub 12} chalcogenide nano colloids

Energy Technology Data Exchange (ETDEWEB)

Tintu, R., E-mail: tintu_tillanivas@yahoo.co.in [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686560 (India); Nampoori, V.P.N.; Radhakrishnan, P.; Thomas, Sheenu [International School of Photonics, Cochin University of Science and Technology, Cochin 689110 (India); Unnikrishnan, N.V. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686560 (India)

2013-04-01

We report the observation of two-photon induced photoluminescence from Ge{sub 28}Se{sub 60}Sb{sub 12} nano colloid solutions using frequency doubled Nd:YAG laser. Quadratic emission intensity dependence verifies the two photon absorption for the observed luminescence at an excitation of 532 nm. The optical band gap of the material is found to be tunable depending on the cluster size of the nano colloids. The cluster formation and the dependence of the cluster size with concentration were confirmed by the SEM analysis. Confocal imaging was done to confirm the emission from the clusters in the nano colloid solutions.

Electrical isolation of dislocations in Ge layers on Si(001 substrates through CMOS-compatible suspended structures

Directory of Open Access Journals (Sweden)

Vishal Ajit Shah, Maksym Myronov, Chalermwat Wongwanitwatana, Lewis Bawden, Martin J Prest, James S Richardson-Bullock, Stephen Rhead, Evan H C Parker, Terrance E Whall and David R Leadley

2012-01-01

Full Text Available Suspended crystalline Ge semiconductor structures are created on a Si(001 substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have different etch resistance. The structures are aligned to avoid etch-resistive planes in making the suspended regions and to take advantage of these planes to retain the underlying Si to support the structures. The technique is demonstrated by forming suspended microwires, spiderwebs and van der Pauw cross structures. We finally report on the low-temperature electrical isolation of the undoped Ge layers. This novel isolation method increases the Ge resistivity to 280 Ω cm at 10 K, over two orders of magnitude above that of a bulk Ge on Si(001 layer, by removing material containing the underlying misfit dislocation network that otherwise provides the main source of electrical conduction.
Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

Science.gov (United States)

Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Goumri-Said, Souraya; Tahir, S. A.

2018-05-01

Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1-xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1-xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1-xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1-xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1-xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1-xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1-xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.
Effect of chemical structure on the radioactive decay rate of 71Ge

International Nuclear Information System (INIS)

Makariunas, K.; Makariuniene, E.; Dragunas, A.

1979-01-01

The influence of the chemical structure on the electron capture radioactive decay rate of 71 Ge was observed. 71 Ge nuclei in bivalent sulphide GeS decay faster than in quadrivalent sulphide GeS 2 . The relative change Δlambda/lambda of the decay constant lambda is + (11.4 +- 1.7) X 10 -4 . A possibility to use the experimental values of Δlambda/lambda to determine the chemical changes in the electron density at germanium nuclei in germanium chemical compounds is discussed. Quantitative determination of the changes in the electron density is complicated because of insufficient reliability of the published values of exchange and overlap corrections to the electron capture probabilities. (Auth.)
Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

Science.gov (United States)

Nahali, Masoud; Mehri, Ali

2018-06-01

The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.
Structural, Electronic, and Thermodynamic Properties of Tetragonal t-SixGe3−xN4

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Chenxi Han

2018-03-01

Full Text Available The structural, mechanical, anisotropic, electronic, and thermal properties of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 in the tetragonal phase are systematically investigated in the present work. The mechanical stability is proved by the elastic constants of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4. Moreover, they all demonstrate brittleness, because B/G < 1.75, and v < 0.26. The elastic anisotropy of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 is characterized by Poisson’s ratio, Young’s modulus, the percentage of elastic anisotropy for bulk modulus AB, the percentage of elastic anisotropy for shear modulus AG, and the universal anisotropic index AU. The electronic structures of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 are all wide band gap semiconductor materials, with band gaps of 4.26 eV, 3.94 eV, 3.83 eV, and 3.25 eV, respectively, when using the Heyd-Scuseria-Ernzerhof (HSE06 hybrid functional. Moreover, t-Ge3N4 is a quasi-direct gap semiconductor material. The thermodynamic properties of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 are investigated utilizing the quasi-harmonic Debye model. The effects of temperature and pressure on the thermal expansion coefficient, heat capacity, Debye temperature, and Grüneisen parameters are discussed in detail.
Identification of Four Distinct Phylogenetic Groups in Flavobacterium columnare With Fish Host Associations

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Benjamin R. LaFrentz

2018-03-01

Full Text Available Columnaris disease, caused by the Gram-negative bacterium Flavobacterium columnare, is one of the most prevalent fish diseases worldwide. An exceptionally high level of genetic diversity among isolates of F. columnare has long been recognized, whereby six established genomovars have been described to date. However, little has been done to quantify or characterize this diversity further in a systematic fashion. The objective of this research was to perform phylogenetic analyses of 16S rRNA and housekeeping gene sequences to decipher the genetic diversity of F. columnare. Fifty isolates and/or genomes of F. columnare, originating from diverse years, geographic locations, fish hosts, and representative of the six genomovars were analyzed in this study. A multilocus phylogenetic analysis (MLPA of the 16S rRNA and six housekeeping genes supported four distinct F. columnare genetic groups. There were associations between genomovar and genetic group, but these relationships were imperfect indicating that genomovar assignment does not accurately reflect F. columnare genetic diversity. To expand the dataset, an additional 90 16S rRNA gene sequences were retrieved from GenBank and a phylogenetic analysis of this larger dataset also supported the establishment of four genetic groups. Examination of isolate historical data indicated biological relevance to the identified genetic diversity, with some genetic groups isolated preferentially from specific fish species or families. It is proposed that F. columnare isolates be assigned to the four genetic groups defined in this study rather than genomovar in order to facilitate a standard nomenclature across the scientific community. An increased understanding of which genetic groups are most prevalent in different regions and/or aquaculture industries may allow for the development of improved targeted control and treatment measures for columnaris disease.
Investigation of columnar-to-equiaxed transition in solidification processing of AlSi alloys in microgravity – The CETSOL project

International Nuclear Information System (INIS)

Zimmermann, G; Sturz, L; Billia, B; Mangelinck-Noël, N; Thi, H Nguyen; Gandin, Ch- A; Browne, D J; Mirihanage, W U

2011-01-01

Grain structures observed in most casting processes of metallic alloys are the result of a competition between the growth of several arrays of dendrites that develop under constrained and unconstrained conditions. Often this leads to a transition from columnar to equiaxed grain growth during solidification (CET). A microgravity environment results in suppression of buoyancy-driven melt flow and so enables growth of equiaxed grains free of sedimentation and buoyancy effects. This contribution presents first results obtained in experiments on-board the International Space Station (ISS), which were performed in the frame of the ESA-MAP programme CETSOL. Hypoeutectic aluminium-silicon alloys with and without grain refiners were processed successfully in a low gradient furnace (MSL-LGF). First analysis shows that in the non grain refined samples columnar dendritic growth exists, whereas CET is observed in the grain refined samples. From analysis of the thermal data and the grain structure the critical parameters for the temperature gradient and the cooling rate describing CET are determined. These data are used for initial numerical simulations to predict the position of the columnar-to-equiaxed transition and will form a unique database for calibration and further development of numerical CET-modeling.
Optical, electrical and the related parameters of amorphous Ge-Bi-Se thin films

International Nuclear Information System (INIS)

El-Korashy, A.; El-Kabany, N.; El-Zahed, H.

2005-01-01

The related optical and electrical parameters of amorphous Ge-Bi-Se thin films were studied. The dependence of optical and electrical properties on the Bi content was observed in most compositions. At Bi >10at% the behavior show a switch from p to n type conduction mechanism. The correlation between the optical band gap E g and the average heats of atomization H s were observed. The results indicated that both the number of topological constant N con and the radial and angular N α , N β valence force constants exhibit the same trend with increasing Bi content. On the other hand, the mean bond energy increases with increasing Bi content to x=15at%. It may be concluded that is a function of the mean coordination number N co , the type of bonds, the degree of cross-linking and the band energy forming the network
The Age-Precipitations Structure Of Al-Mg-Ge Alloy Aged At 473K

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Kawai A.

2015-06-01

Full Text Available The Al-Mg-Ge alloy is one of the age-hardening aluminum alloy after solution heat treatment. It has been proposed that the age-precipitation behavior of Al-Mg-Ge alloy is different from that of Al-Mg-Si alloy according to our previous works about the microstructure on Al-Mg-Ge alloy over-aged at 523K. For example, The hardness of peak aged Al-1.0mass%Mg2Ge alloy is higher than that of Al-1.0mass%Mg2Si alloy. The precipitates in the over-aged samples have been classified as some metastable phases, such as the β’-phase and Type-A precipitates and equilibrium phase of β-Mg2Ge by TEM observation. There a few reports about microstructure on Al-Mg-Ge alloys observed by TEM for different aging times. The age-precipitations structure of Al-Mg-Ge alloy has not been became clear. In this work, TEM observation was investigated the microstructure on Al-1.0mass%Mg2Ge alloy for difference aging times aged at 473K.
Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts

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Jin-Seok Lee

2012-01-01

Full Text Available In order to obtain optimum growth conditions for desired thickness and more effective silicon feedstock usage, effects of processing parameters such as preheated substrate temperatures, time intervals, moving velocity of substrates, and Ar gas blowing rates on silicon ribbon thickness were investigated in the horizontal growth process. Most of the parameters strongly affected in the control of ribbon thickness with columnar grain structure depended on the solidification rate. The thickness of the silicon ribbon decreased with an increasing substrate temperature, decreasing time interval, and increasing moving velocity of the substrate. However, the blowing of Ar gas onto a liquid layer existing on the surface of solidified ribbon contributed to achieving smooth surface roughness but did not closely affect the change of ribbon thickness in the case of a blowing rate of ≥0.65 Nm3/h because the thickness of the solidified layer was already determined by the exit height of the reservoir.
Walleye Autochthonous Bacteria as Promising Probiotic Candidates against Flavobacterium columnare

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Hamza Seghouani

2017-07-01

Full Text Available Walleye (Sander vitreus is the second most fished freshwater species in Canada. While much sought by anglers, walleye also supports substantial commercial fisheries. To cope with the recent decline of wild walleye populations, fish farmers produce juveniles for lake stocking. However, walleye breeding is particularly tedious, mostly due to high disease susceptibility at larval and juvenile developmental stages. The main threat is the columnaris disease, which is caused by Flavobacterium columnare, an opportunistic bacteria. As F. columnare strains exhibit increasing antibiotic resistance, there is a strong need to develop efficient and sustainable alternative strategies to control columnaris disease. Bacterial probiotics have been shown to mitigate infections either by enhancing host immune response or by inhibiting pathogen growth. Being successfully assessed in many fish/pathogen combinations, we developed a tailored probiotic strategy for walleye to prevent and treat columnaris disease. Thirty-seven endogenous bacterial strains were isolated from healthy walleye’s skin and gut, were tested in vitro against F. columnare. Significant antagonistic effect against F. columnare was measured for 2 out of 37 endogenous strains. These two probiotic strains were identified as Pseudomonas fluorescens. The antagonistic effect of these two successful probiotics was further validated in vivo during a 2-month stress trial: groups receiving probiotic treatments showed on average 53.74% survival improvement.
Structural and electronic properties of Pt induced nanowires on Ge(110)

Energy Technology Data Exchange (ETDEWEB)

Zhang, L.; Bampoulis, P.; Safaei, A.; Zandvliet, H.J.W.; Houselt, A. van, E-mail: A.vanHouselt@utwente.nl

2016-11-30

Highlights: • Deposition of Pt induces regularly spaced (1.13 nm, 1.97 nm and 3.38 nm) nanowires on Ge(110). • In the troughs between the wires spaced 6× the Ge lattice consant pentagons are observed. • Spatially resolved STS reveals a filled electronic state at −0.35 eV. • This state has its highest intensity above the pentagons. • For 2 ML Pt, nanowires coexist with PtGe clusters, which become liquid like above 1040 K. - Abstract: The structural and electronic properties of Pt induced nanowires on Ge(110) surfaces have been studied by scanning tunneling microscopy and low energy electron microscopy. The deposition of a sub-monolayer amount of Pt and subsequent annealing at 1100 (±30) K results into nanowires which are aligned along the densely packed [1–10] direction of the Ge(110) surface. With increasing Pt coverage the nanowires form densely packed arrays with separations of 1.1 ± 0.1 nm, 2.0 ± 0.1 nm and 3.4 ± 0.1 nm. Ge pentagons reside in the troughs for nanowire separations of 3.4 nm, however for smaller nanowire separations no pentagons are found. Spatially resolved scanning tunneling spectroscopy measurements reveal a filled electronic state at −0.35 eV. This electronic state is present in the troughs as well as on the nanowires. The −0.35 eV state has the strongest intensity on the pentagons. For Pt depositions exceeding two monolayers, pentagon free nanowire patches are found, that coexist with Pt/Ge clusters. Upon annealing at 1040 K these Pt/Ge clusters become liquid-like, indicating that we are dealing with eutectic Pt{sub 0.22}Ge{sub 0.78} clusters. Low energy electron microscopy videos reveal the formation and spinodal decomposition of these eutectic Pt/Ge clusters.
Optical properties and thermal stability of germanium oxide (GeO2) nanocrystals with α-quartz structure

International Nuclear Information System (INIS)

Ramana, C.V.; Carbajal-Franco, G.; Vemuri, R.S.; Troitskaia, I.B.; Gromilov, S.A.; Atuchin, V.V.

2010-01-01

Germanium dioxide (GeO 2 ) crystals were prepared by a chemical precipitation method at a relatively low-temperature (100 o C). The grown crystals were characterized by studying their microstructure, optical properties and thermal stability. The results indicate that the grown GeO 2 crystals exhibit α-quartz type crystal structure. The lattice parameters obtained from XRD were a = 4.987(4) A and c = 5.652(5) A. Electron microscopy analysis indicates a high structural quality of GeO 2 crystals grown using the present approach. Optical absorption measurements indicate a direct bandgap of 5.72 eV without any additional bands arising from localized or defect states. Thermogravimetric measurements indicate the temperature stability of the grown GeO 2 nanocrystals. Microscopic analysis coupled with energy dispersive X-ray spectroscopy of the GeO 2 crystals with α-quartz type crystal structure indicates their stability in chemical composition up to a temperature of 400 deg. C. The surface morphology of GeO 2 crystals, however, found to be changing with the increase in temperature.
Does flat epithelial atypia have rounder nuclei than columnar cell change/hyperplasia? A morphometric approach to columnar cell lesions of the breast.

Science.gov (United States)

Yamashita, Yoshiko; Ichihara, Shu; Moritani, Suzuko; Yoon, Han-Seung; Yamaguchi, Masahiro

2016-06-01

Columnar cell lesions of the breast encompass columnar cell change/hyperplasia (CCC/CCH) and flat epithelial atypia (FEA). These have attracted researchers because emerging data suggest that FEA may represent the earliest histologically detectable non-obligate precursor of breast cancer. However, it is occasionally difficult to distinguish FEA from CCC/CCH because of similar histology. Although the nuclei of FEA are frequently described as relatively round compared with those of CCC/CCH, there are few morphometric studies to support this statement. The aim of this study was to provide objective data as to the nuclear shape in columnar cell lesions. As a shape descriptor, we adopted ellipticity that is defined by the formula 2b/2a, where a is the length of the long axis of the ellipse and b is the length of the short axis. Contrary to circularity, ellipticity reflects the overall configuration of an ellipse irrespective of surface irregularity. Our image analysis included generating whole slide images, extracting glandular cell nuclei, measuring nuclear ellipticity, and superimposing graded colors based on execution of results on the captured images. A total of 7917 nuclei extracted from 22 FEA images and 5010 nuclei extracted from 13 CCC/CCH images were analyzed. There was a significant difference in nuclear roundness between FEA and CCC/CCH with mean ellipticity values of 0.723 and 0.679, respectively (p < 0.001, Welch's t test). Furthermore, FEA with malignancy had significantly rounder nuclei than FEA without malignancy (p < 0.001). Our preliminary results suggest that nuclear ellipticity is a key parameter in reproducibly classifying columnar cell lesions of the breast.
Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides

Science.gov (United States)

Cheng, Cheng

Non-crystalline thin film materials are widely used in the semiconductor industry (micro- and optoelectronics) and in green energy, e.g., photovolatic applications. This dissertation under-pins these device application with studies of their electronic structures using derivative X-ray Absorption Spectroscopy (XAS) and derivative Spectroscopic Ellipsometry (SE) for the first time to experimentally determine electronic and intrinsic defect structures. Differences between electron and hole mobilities in c- (and ng-Si) and c- (and ng- Ge), make Ge channels superior to Si channels in for aggressively scaled CMOS field effect transistors (FETs). Bonding between Si and Ge substrates and gate dielectric oxides is the focus this dissertation. The primary objective of this research is to measure and interpret by ab-initio theory the electronic and intrinsic electronic defect structures mirco-electronic thin film materials. This is accomplished for the first time by combining (i) derivative XAS TEY data obtained at the Stanford Synchrotron Radiation Light Source (SSRL) with (ii) derivative Spectroscopic Ellipsometry results obtained at the J.A. Woollam Co. laboratory. All the oxides were deposited in RPECVD system with in-line AES and RHEED. Thins films and gate stacks were annealed in RTA system in Ar to determine temperature dependent changes. 2nd derivative analysis is applied on XAS and SE spectra emphasizing the conduction band (CB) and virtual bound state (VBS) regimes. 2nd derivative SE spectra for ng-Si and ng-Ge each have 3 distinct regimes: (i) 3 excitons, (ii) 2 features in the CB edge region, and (iii) 3 additional exciton features above the IP. Excitonic spectral width provides conductivity electron masses (em0*) and hence electron mobilities. The wider the energy range, the higher the electron mobility in that CB. Spectra of high-K dielectrics have an additional energy regime between the CB edge regime, and the higher eV excitons. This regime has 4 intra-d state
Structural, electric and kinetic parameters of ternary alloys of GeSbTe

Energy Technology Data Exchange (ETDEWEB)

Morales-Sanchez, E. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico)]. E-mail: m6007@ciateq.net.mx; Prokhorov, E.F. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico); Gonzalez-Hernandez, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico); Mendoza-Galvan, A. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico)

2005-01-03

Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge{sub 1}Sb{sub 4}Te{sub 7}, Ge{sub 1}Sb{sub 2}Te{sub 4}, Ge{sub 2}Sb{sub 2}Te{sub 5}, and Ge{sub 4}Sb{sub 1}Te{sub 5.} The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge{sub 4}Sb{sub 1}Te{sub 5} composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 {omega} cm), the greatest E{sub a} (3.09 eV), and the lowest lattice constant (a=5.975 A) in the cubic phase at 170 deg C.
Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

OpenAIRE

Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

2017-01-01

Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...
Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

Energy Technology Data Exchange (ETDEWEB)

Wang, Dong, E-mail: wang.dong.539@m.kyushu-u.ac.jp [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Maekura, Takayuki [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Yamamoto, Keisuke; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

2016-03-01

Direct band gap (DBG) electroluminescence (EL) and photo detection were studied at room temperature for n-type bulk germanium (Ge) diodes with a fin type lateral HfGe/Ge/TiN structure. DBG EL spectra peaked at 1.55 μm were clearly observed due to small hole and electron barrier heights of HfGe/Ge and TiN/Ge contacts. DBG EL peak intensity increased with increasing doping level of Ge substrate due to increased electron population in direct conduction band. The integrated intensity of DBG EL spectrum is proportional to the area of active region, implying a good surface-uniformity of EL efficiency. Small dark current intensity was measured as 2.4 × 10{sup −7} A under a reverse bias voltage of − 1 V, corresponding to dark current densities of 5.3 × 10{sup −10} A/μm or 3.2 × 10{sup −10} A/μm{sup 2}. At the wavelength of 1.55 μm, a linear dependence of photo current intensity on laser power was observed with a responsivity of 0.44 A/W at a reverse bias voltage of − 1 V. - Highlights: • Lateral HfGe/Ge/TiN diodes were fabricated on bulk Ge substrates. • The highest temperature was 400 °C for the entire fabrication process. • Electroluminescence spectra were measured for HfGe/Ge/TiN diodes with different parameters. • Dark current densities were 5.3 × 10{sup −10} A/μm or 3.2 × 10{sup −10} A/μm{sup 2} at − 1 V. • Responsivity was 0.44 A/W, corresponding to an external quantum efficiency of 35.2%.
Complementary information on CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements

International Nuclear Information System (INIS)

Piskorska-Hommel, E.; Holý, V.; Caha, O.; Wolska, A.; Gust, A.; Kruse, C.; Kröncke, H.; Falta, J.; Hommel, D.

2012-01-01

The extended X-ray absorption fine structure (EXAFS) and diffraction anomalous fine structure (DAFS) have been applied to investigate a local structure for the CdSe/ZnSe quantum dots grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE). The aim was to study the intermixing of Cd and Zn atoms, chemical compositions and strain induced by cap-layer. The EXAFS at the Cd K-edge and DAFS at the Se K-edge proved the intermixing of Cd and Zn atoms. The distances Cd–Se (2.61 Å) found from EXAFS and DAFS analysis for h 1 region is closer to that in bulk CdSe (2.62 Å). The DAFS analysis revealed the differences in the local structure in two investigated regions (i.e. different iso-strain volumes) on the quantum dots. It was found that the investigated areas differ in the Cd concentration. To explain the experimental results the theoretical calculation based on a full valence-force field (VFF) model was performed. The theoretical VFF model fully explains the experimental data.
Identification of four distinct phylogenetic groups in Flavobacterium columnare with fish host associations

Science.gov (United States)

Columnaris disease, caused by the Gram-negative bacterium Flavobacterium columnare, is one of the most prevalent fish diseases worldwide. An exceptionally high level of genetic diversity among isolates of F. columnare has long been recognized, whereby six established genomovars have been described t...

SU-E-I-11: Cascaded Linear System Model for Columnar CsI Flat Panel Imagers with Depth Dependent Gain and Blur

International Nuclear Information System (INIS)

Peng, B; Lubinsky, A; Zheng, H; Zhao, W; Teymurazyan, A

2014-01-01

Purpose: To implement a depth dependent gain and blur cascaded linear system model (CLSM) for optimizing columnar structured CsI indirect conversion flat panel imager (FPI) for advanced imaging applications. Methods: For experimental validation, depth dependent escape efficiency, e(z), was extracted from PHS measurement of different CsI scintillators (thickness, substrate and light output). The inherent MTF and DQE of CsI was measured using high resolution CMOS sensor. For CLSM, e(z) and the depth dependent MTF(f,z), were estimated using Monte Carlo simulation (Geant4) of optical photon transport through columnar CsI. Previous work showed that Monte Carlo simulation for CsI was hindered by the non-ideality of its columnar structure. In the present work we allowed variation in columnar width with depth, and assumed diffusive reflective backing and columns. Monte Carlo simulation was performed using an optical point source placed at different depth of the CsI layer, from which MTF(z,f) and e(z) were computed. The resulting e(z) with excellent matching with experimental measurements were then applied to the CLSM, Monte Carlo simulation was repeated until the modeled MTF, DQE(f) also match experimental measurement. Results: For a 150 micron FOS HL type CsI, e(z) varies between 0.56 to 0.45, and the MTF at 14 cycles/mm varies between 62.1% to 3.9%, from the front to the back of the scintillator. The overall MTF and DQE(f) at all frequencies are in excellent agreement with experimental measurements at all frequencies. Conclusion: We have developed a CLSM for columnar CsI scintillators with depth dependent gain and MTF, which were estimated from Monte Carlo simulation with novel optical simulation settings. Preliminary results showed excellent agreement between simulation results and experimental measurements. Future work is aimed at extending this approach to optimize CsI screen optic design and sensor structure for achieving higher DQE(f) in cone-beam CT, which uses
Electronic structure of O-doped SiGe calculated by DFT + U method

Science.gov (United States)

Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

2016-12-01

To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).
Huge operation by energy gap of novel narrow band gap Tl1-x In1-x B x Se2 (B = Si, Ge): DFT, x-ray emission and photoconductivity studies

Science.gov (United States)

Piasecki, M.; Myronchuk, G. L.; Zamurueva, O. V.; Khyzhun, O. Y.; Parasyuk, O. V.; Fedorchuk, A. O.; Albassam, A.; El-Naggar, A. M.; Kityk, I. V.

2016-02-01

It is shown that narrow band gap semiconductors Tl1-x In1-x GexSe2 are able effectively to vary the values of the energy gap. DFT simulations of the principal bands during the cationic substitutions is done. Changes of carrier transport features is explored. Relation with the changes of the near the surface states is explored . Comparison on a common energy scale of the x-ray emission Se Kβ 2 bands, representing energy distribution of the Se 4p states, indicates that these states contribute preliminary to the top of the valence band. The temperature dependence of electrical conductivity and spectral dependence photoconductivity for the Tl1-x In1-x Ge x Se2 and Tl1-x In1-x Si x Se2 single crystals were explored and compared with previously reported Tl1-x In1-x Sn x Se2. Based on our investigations, a model of centre re-charging is proposed. Contrary to other investigated crystals in Tl1-x In1-x Ge x Se2 single crystals for x = 0.1 we observe extraordinarily enormous photoresponse, which exceed more than nine times the dark current. X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces of Tl1-x In1-x GexSe2 (x = 0.1 and 0.2) single crystals have been studied. These results indicate that the relatively low hygroscopicity of the studied single crystals is typical for the Tl1-x In1-x Ge x Se2 crystals, a property that is very important for handling these quaternary selenides as infrared materials operating at ambient conditions.
Structure of eutectic alloys of Au with Si and Ge

Energy Technology Data Exchange (ETDEWEB)

Takeda, S. [Faculty of Sciences, Kyushu University, 4-2-1, Ropponmatsu, Fukuoka 810-8560 (Japan)], E-mail: takeda@rc.kyushu-u.ac.jp; Fujii, H. [Graduate School of Sciences, Kyushu University, 4-2-1, Ropponmatsu, Fukuoka 810-8560 (Japan); Kawakita, Y. [Faculty of Sciences, Kyushu University, 4-2-1, Ropponmatsu, Fukuoka 810-8560 (Japan); Tahara, S.; Nakashima, S. [Graduate School of Sciences, Kyushu University, 4-2-1, Ropponmatsu, Fukuoka 810-8560 (Japan); Kohara, S.; Itou, M. [Japan Synchrotron Radiation Research Institute, 1-1-1 Koto Sayo-cho, Sayo Hyogo 679-5198 (Japan)

2008-03-06

Au-Si and Au-Ge alloy systems have a deep eutectic point in the Au-rich concentration region where the melting point falls down to 633 K. In order to investigate the liquid structure in relation to the glass-forming tendency of these alloys, high-energy X-ray diffraction measurements have been carried out at the eutectic composition and at compositions with excess amounts of Au or IVb element. The nearest neighbor correlations in the eutectic liquids are intense and sharp in the pair distribution function and exhibit a rather small temperature dependence in comparison with those alloys of other than the eutectic composition. Structural models for these liquid alloys are proposed with the aid of reverse Monte Carlo simulation. The reproduced atomic arrangements around the eutectic region exhibit a substitutional-type structure where the dense random packing of Au atoms is preserved and Si or Ge atoms occupy the Au-sites at random.
Crystal and magnetic structure of TbFe{sub 0.25}Ge{sub 2} compound

Energy Technology Data Exchange (ETDEWEB)

Gil, A., E-mail: a.gil@ajd.czest.pl [Faculty of Mathematics and Natural Sciences, Jan Długosz University in Częstochowa, Armii Krajowej 13/15, 42-200 Częstochowa (Poland); Hoser, A. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14-109 Berlin (Germany); Penc, B.; Szytuła, A. [M. Smoluchowski Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Kraków (Poland)

2013-10-15

The crystal and magnetic structure of polycrystalline TbFe{sub 0.25}Ge{sub 2} sample have been determined. X-ray and neutron diffraction studies indicate that this compound has the orthorhombic CeNiSi{sub 2}-type crystal structure (space group Cmcm). The magnetic ordering, based on the neutron diffraction data in low temperature, is described by two components: a collinear antiferromagnetic G-type and a cosine-wave modulated one. In the collinear G-type structure the Tb magnetic moment is equal to 3.81(5) µ{sub B} and it is parallel to the c-axis. The modulated structure is described by the propagation vector k=(0.460(8), 0, 0.305(1)), the Tb magnetic moment equals 7.75(8) µ{sub B,} lies in b–c and forms an angle 23(2)° with the c-axis. The collinear component decreases to zero at 22.6 K while the modulated one at 190.8 K. - Highlights: • We determine crystal and magnetic structure of TbFe{sub 0.25}Ge{sub 2} compound. • We compare the results with other TbT{sub x}Ge{sub 2} compounds. • We observe the complex magnetic structure in TbFe{sub 0.25}Ge{sub 2} with two components: collinear and cosine-wave modulated. • T (3d) element have got significant influence on the interactions in Tb sublattice.
High-speed Si/GeSi hetero-structure Electro Absorption Modulator.

Science.gov (United States)

Mastronardi, L; Banakar, M; Khokhar, A Z; Hattasan, N; Rutirawut, T; Bucio, T Domínguez; Grabska, K M; Littlejohns, C; Bazin, A; Mashanovich, G; Gardes, F Y

2018-03-19

The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.
Electronic structure of germanium selenide investigated using ultra-violet photo-electron spectroscopy

Science.gov (United States)

Mishra, P.; Lohani, H.; Kundu, A. K.; Patel, R.; Solanki, G. K.; Menon, Krishnakumar S. R.; Sekhar, B. R.

2015-07-01

The valence band electronic structure of GeSe single crystals has been investigated using angle resolved photoemission spectroscopy (ARPES) and x-ray photoelectron spectroscopy. The experimentally observed bands from ARPES, match qualitatively with our LDA-based band structure calculations along the Γ-Z, Γ-Y and Γ-T symmetry directions. The valence band maximum occurs nearly midway along the Γ-Z direction, at a binding energy of -0.5 eV, substantiating the indirect band gap of GeSe. Non-dispersive features associated with surface states and indirect transitions have been observed. The difference in hybridization of Se and Ge 4p orbitals leads to the variation of dispersion along the three symmetry directions. The predominance of the Se 4pz orbitals, evidenced from theoretical calculations, may be the cause for highly dispersive bands along the Γ-T direction. Detailed electronic structure analysis reveals the significance of the cation-anion 4p orbitals hybridization in the valence band dispersion of IV-VI semiconductors. This is the first comprehensive report of the electronic structure of a GeSe single crystal using ARPES in conjugation with theoretical band structure analysis.
Electronic structure of germanium selenide investigated using ultra-violet photo-electron spectroscopy

International Nuclear Information System (INIS)

Mishra, P; Lohani, H; Sekhar, B R; Kundu, A K; Menon, Krishnakumar S R; Patel, R; Solanki, G K

2015-01-01

The valence band electronic structure of GeSe single crystals has been investigated using angle resolved photoemission spectroscopy (ARPES) and x-ray photoelectron spectroscopy. The experimentally observed bands from ARPES, match qualitatively with our LDA-based band structure calculations along the Γ–Z, Γ–Y and Γ–T symmetry directions. The valence band maximum occurs nearly midway along the Γ–Z direction, at a binding energy of −0.5 eV, substantiating the indirect band gap of GeSe. Non-dispersive features associated with surface states and indirect transitions have been observed. The difference in hybridization of Se and Ge 4p orbitals leads to the variation of dispersion along the three symmetry directions. The predominance of the Se 4p z orbitals, evidenced from theoretical calculations, may be the cause for highly dispersive bands along the Γ–T direction. Detailed electronic structure analysis reveals the significance of the cation–anion 4p orbitals hybridization in the valence band dispersion of IV–VI semiconductors. This is the first comprehensive report of the electronic structure of a GeSe single crystal using ARPES in conjugation with theoretical band structure analysis. (paper)
UV laser micromachining of ceramic materials: formation of columnar topographies

International Nuclear Information System (INIS)

Oliveira, V.; Vilar, R.; Conde, O.

2001-01-01

Laser machining is increasingly appearing as an alternative for micromachining of ceramics. Using ceramic materials using excimer lasers can result in smooth surfaces or in the formation of cone-like or columnar topography. Potential applications of cone-shaped or columnar surface topography include, for example, light trapping in anti-reflection coatings and improvement of adhesion bonding between ceramic materials. In this communication results of a comparative study of surface topography change during micromachining of several ceramic materials with different ablation behaviors are reported. (orig.)
Low spin structure of 86Se: Confirmation of γ collectivity at N =52

Science.gov (United States)

Materna, T.; Urban, W.; Sieja, K.; Köster, U.; Faust, H.; Czerwiński, M.; RzÄ ca-Urban, T.; Bernards, C.; Fransen, C.; Jolie, J.; Regis, J.-M.; Thomas, T.; Warr, N.

2015-09-01

The 86Se nucleus has been investigated by γ -ray spectroscopy using an array of Ge detectors placed at the exit of the fission-fragment mass separator Lohengrin of the Institut Laue-Langevin. New transitions have been identified by studying the β decay of 86As. An excitation scheme is proposed and includes a 22+ level at 1399 keV and a possible 3+ level that are well reproduced by shell model calculations with the most recent parametrization. The properties of the excitations indicate a possible onset of γ collectivity in 86Se.
Structure and Spatial Distribution of Ge Nanocrystals Subjected to Fast Neutron Irradiation

Directory of Open Access Journals (Sweden)

Alexander N. Ionov

2011-07-01

Full Text Available The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS, High Resolution Transmission Electron Microscopy (HR-TEM and X-ray photoelectron spectroscopy (XPS. The irradiation of Ge- NC samples by a high dose of fast neutrons lead to a partial destruction of the nanocrystals. Full reconstruction of crystallinity was achieved after annealing the radiation damage at 8000C, which resulted in full restoration of the RS spectrum. HR-TEM images show, however, that the spatial distributions of Ge-NC changed as a result of irradiation and annealing. A sharp decrease in NC distribution towards the SiO2 surface has been observed. This was accompanied by XPS detection of Ge oxides and elemental Ge within both the surface and subsurface region.
Structural transformation in mechanosynthesized bcc Fe-Al-Si(Ge) solid solutions during heating

International Nuclear Information System (INIS)

Kubalova, L.M.; Sviridov, I.A.; Vasilyeva, O.Ya.; Fadeeva, V.I.

2007-01-01

X-ray diffractometry and Moessbauer spectroscopy study of Fe 50 Al 25 Si 25 and Fe 50 Al 25 Ge 25 alloys obtained by mechanical alloying (MA) of elementary powders was carried out. Phase transformation during heating of synthesized products was studied using differential scanning calorimetry (DSC). After 2.5 h of MA monophase alloys containing bcc Fe(Al, Ge) solid solutions Fe(Al, Si) are formed. Fe(Al, Si) is partially ordered B2 type and Fe(Al, Ge) is completely disordered. DSC curves of synthesized alloys displayed the presence of exothermal peaks caused by phase transformation. The metastable Fe(Al, Si) solid solution transformed into FeAl 1-x Si x (B2) and FeSi 1-x Al x (B20) equilibrium phases. The Fe(Al, Ge) solid solution transformed into equilibrium phases through intermediate stage of Fe 6 Ge 3 Al 2 metastable phase formation. The Fe 6 Ge 3 Al 2 phase dissociated into three equilibrium phases: FeAl 1-x Ge x (B2), χ-Fe 6 Ge 5 and η-Fe 13 (Ge, Al) 8 (B8 2 ). The structure of Fe 6 Ge 3 Al 2 was calculated by Rietveld method, the distribution of Al and Ge in the elementary cell and its parameters were calculated. Moessbauer study showed that Fe(Al, Si) and Fe(Al, Ge) solid solutions are paramagnetic. In the equilibrium state the alloy containing Si is also paramagnetic while the alloy with Ge showed ferromagnetic properties
Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

International Nuclear Information System (INIS)

Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

2009-01-01

Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.
Vortex trapping by tilted columnar defects

International Nuclear Information System (INIS)

Baladie, I.; Buzdin, A.

2000-01-01

The irradiation of high-T c superconductors by inclined heavy-ion beam can create columnar defects (CD's) practically at any angle towards the crystal c axis. We calculate the energy of a tilted vortex trapped on an inclined columnar defect within the framework of an electromagnetic model. Under a weak perpendicular magnetic field, and if the CD radius is larger than the superconducting coherence length, vortices always prefer to be on a tilted CD than to be aligned along the external field. We calculate also the interaction energy between two tilted vortices and find that large attractive regions appear. In particular, in the plane defined by c axis and the CD axis, tilted vortices attract each other at long distances, leading to the formation of vortex chains. The equilibrium distance between vortices in a chain is of the order of the magnitude of the in-plane London penetration depth. The existence of the inclined trapped vortices could be revealed by torque measurements, and could also lead to the anisotropy of the in-plane resistivity and the critical current
Density Functional Theory Calculations Revealing Metal-like Band Structures for Ultrathin Ge {111} and {211} Surface Layers.

Science.gov (United States)

Tan, Chih-Shan; Huang, Michael Hsuan-Yi

2018-05-21

To find out if germanium should also possess facet-dependent electrical conductivity properties, surface state density functional theory (DFT) calculations were performed on 1-6 layers of Ge (100), (110), (111), and (211) planes. Tunable Ge (100) and (110) planes always present the same semiconducting band structure with a band gap of 0.67 eV expected of bulk germanium. In contrast, 1, 2, 4, and 5 layers of Ge (111) and (211) plane models show metal-like band structures with continuous density of states (DOS) throughout the entire band. For 3 and 6 layers of Ge (111) and (211) plane models, the normal semiconducting band structure was obtained. The plane layers with metal-like band structures also show Ge-Ge bond length deviations and bond distortions, as well as significantly different 4s and 4p frontier orbital electron count and their relative percentages integrated over the valence and conduction bands from those of the semiconducting state. These differences should contribute to strikingly dissimilar band structures. The calculation results suggest observation of facet-dependent electrical conductivity properties of germanium materials, and transistors made of germanium may also need to consider the facet effects with shrinking dimensions approaching 3 nm. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Micro- and macro-structure of implantation-induced disorder in Ge

CERN Document Server

Glover, C J; Byrne, A P; Yu, K M; Foran, G J; Clerc, C; Hansen, J L; Nylandsted-Larsen, A

2000-01-01

The structure of ion implantation-induced damage in Ge substrates has been investigated with a combination of ion- and photon-based techniques including Rutherford backscattering spectrometry (RBS), perturbed angular correlation (PAC) and extended X-ray absorption fine structure (EXAFS) spectroscopy. For MeV Ge ion implantation at -196 degrees C, the dose dependence of the decrease in local atomic order, determined from EXAFS and PAC, was compared to the number of displaced atoms determined from RBS measurements. An EXAFS determined damage fraction was shown to be a better estimate of amorphous fraction than the number of displaced atoms. PAC was used to elucidate the evolution of defective configurations, and was compared to the RBS and EXAFS results. A fit to the overlap model with the overlap of two ion cascades for complete amorphization best described the experimental results. (16 refs).
High-pressure structural behavior of nanocrystalline Ge

DEFF Research Database (Denmark)

Wang, H.; Liu, J. F.; Yan, H.

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...
EXAFS as a tool for investigation of the local environment of Ge atoms in buried low-dimensional structures

International Nuclear Information System (INIS)

Demchenko, I.N.; Lawniczak-Jablonska, K.; Liliental-Weber, Z.; Zakharov, D.N.; Zhuravlev, K.S.

2005-01-01

In spite of large number of articles dedicated to the investigation of GeSi islands, a lot of problems concerning growth mechanism and island composition, as well as elastic strains inside the QDs, are still unsolved. To solve such problems, the GeSi low dimensional structures were studied by Extended X-Ray Absorption Fine Structure (EXAFS). The aim of this investigation was to get knowledge about the local structure around Ge atoms inside formed quantum dots. The paper presents a series of measurements performed for a single Ge layer buried in the silicon matrix at A1 station at the HASYLAB/DESY (Germany) with the angle of 45 o between the incident beam and sample surface. The fluorescence, total electron yield and the transmission modes of detection were used. To confirm the EXAFS analysis conclusion more measurements were performed using transmission electron microscopy (TEM). The low temperature samples with 8-20 ML of Ge were investigated by cross-section and plan-view TEM. The reported results of TEM studies of the local structure of germanium quantum dots (QDs) in Si/Ge/Si '' sandwich '' structures are in good correlation with EXAFS conclusion
Vacuum deposition and pulsed modification of Ge thin films on Si. Structure and photoluminescence

International Nuclear Information System (INIS)

Batalov, R.I.; Bayazitov, R.M.; Novikov, G.A.; Shustov, V.A.; Bizyaev, D.A.; Gajduk, P.I.; Ivlev, G.D.; Prokop'ev, S.L.

2013-01-01

Vacuum deposition of Ge thin films onto Si substrates by magnetron sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited films by powerful laser or ion beams was performed. The dependence of the structure and optical properties of Ge/Si films on parameters of pulsed treatments was investigated. Optimum parameters of deposition and pulsed treatments resulting into light emitting monocrystalline Ge/Si layers are determined. (authors)
Crystal structure of a Zn-doped derivative of the Li17Ge4 compound

International Nuclear Information System (INIS)

Lacroix-Orio, L.; Tillard, M.; Belin, C.

2008-01-01

The compound Li 17-ε Zn ε Ge 4 has been obtained as a side product during the preparation of the intermetallic compound Li 8 Zn 2 Ge 3 from the elements. Its structure has been determined from single crystal X-ray diffraction intensities measured at 173 K. It crystallizes in the cubic system, F4-bar3m space group, a = 18.842(1) A, Z = 20. Its crystal structure is slightly different from those so far reported in the literature for the Zn-free phase Li 17 Ge 4 , particularly concerned are the positions and the site occupations of Li atoms. Most likely, these structural variations result from the presence of a small Zn concentration in the compound. The Zn doping atom has been found only at the specific Li 4d site (about 3 at.% Zn)

Ge L{sub 3}-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge{sub 2}Sb{sub 2}Te{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Mitrofanov, K. V. [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Kolobov, A. V., E-mail: a.kolobov@aist.go.jp; Fons, P. [Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan and Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan); Wang, X.; Tominaga, J. [Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Tamenori, Y.; Uruga, T. [Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan); Ciocchini, N.; Ielmini, D. [DEIB - Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano (Italy)

2014-05-07

A gradual uncontrollable increase in the resistivity of the amorphous phase of phase-change alloys, such as Ge{sub 2}Sb{sub 2}Te{sub 5}, known as drift, is a serious technological issue for application of phase-change memory. While it has been proposed that drift is related to structural relaxation, no direct structural results have been reported so far. Here, we report the results of Ge L{sub 3}-edge x-ray absorption measurements that suggest that the drift in electrical conductivity is associated with the gradual conversion of tetrahedrally coordinated Ge sites into pyramidal sites, while the system still remains in the amorphous phase. Based on electronic configuration arguments, we propose that during this process, which is governed by the existence of lone-pair electrons, the concentration of free carriers in the system decreases resulting in an increase in resistance despite the structural relaxation towards the crystalline phase.
On Ba2Ge2Te5, a new telluridogermanate(III) with chain structure

International Nuclear Information System (INIS)

Brinkmann, C.; Eisenmann, B.; Schaefer, H.

1984-01-01

The new compound Ba 2 Ge 2 Te 5 crystallizes in the orthorhombic system (space group: Pna2 1 (No. 33)). The lattice constants are given. In the structure distorted Ge 2 Te 6 -trigonal prisms are connected by common corners to infinite chains. (author)
Magnetism and electronic structure of CoFeCrX (X = Si, Ge) Heusler alloys

International Nuclear Information System (INIS)

Jin, Y.; O'Connell, A.; Kharel, P.; Lukashev, P.; Staten, B.; Tutic, I.; Valloppilly, S.; Herran, J.; Mitrakumar, M.; Bhusal, B.; Huh, Y.; Yang, K.; Skomski, R.; Sellmyer, D. J.

2016-01-01

The structural, electronic, and magnetic properties of CoFeCrX (X = Si, Ge) Heusler alloys have been investigated. Experimentally, the alloys were synthesized in the cubic L2 1 structure with small disorder. The cubic phase of CoFeCrSi was found to be highly stable against heat treatment, but CoFeCrGe disintegrated into other new compounds when the temperature reached 402 °C (675 K). Although the first-principle calculation predicted the possibility of tetragonal phase in CoFeCrGe, the tetragonal phase could not be stabilized experimentally. Both CoFeCrSi and CoFeCrGe compounds showed ferrimagnetic spin order at room temperature and have Curie temperatures (T C ) significantly above room temperature. The measured T C for CoFeCrSi is 790 K but that of CoFeCrGe could not be measured due to its dissociation into new compounds at 675 K. The saturation magnetizations of CoFeCrSi and CoFeCrGe are 2.82 μ B /f.u. and 2.78 μ B /f.u., respectively, which are close to the theoretically predicted value of 3 μ B /f.u. for their half-metallic phases. The calculated band gaps for CoFeCrSi and CoFeCrGe are, respectively, 1 eV and 0.5 eV. These materials have potential for spintronic device applications, as they exhibit half-metallic electronic structures with large band gaps, and Curie temperatures significantly above room temperature.
Evolution of orientations and deformation structures within individual grains in cold rolled columnar grained nickel

DEFF Research Database (Denmark)

Wu, G.L.; Godfrey, A.; Winther, Grethe

2011-01-01

Columnar grained Ni is used as a model material allowing simultaneous non-surface investigations of the evolution of crystallographic orientations and deformation microstructures within individual grains as a function of rolling strain up to ε=0.7. Electron channelling contrast and electron...... backscattered diffraction are used to visualise microstructures and crystallographic orientations. It is found that both the microstructural and the textural development depend strongly on the initial grain orientation. A grain size effect is observed on the deformation-induced orientation scatter within...
X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound

Science.gov (United States)

Shcherba, I. D.; Kostyk, L. V.; Noga, H.; Bekenov, L. V.; Uskokovich, D.; Jatsyk, B. M.

2017-09-01

The band structure of Ca3Ga2Ge3О12 with the garnet structure has been determined for the first time by X-ray emission and photoelectron spectroscopy. It has been established that the bottom of the valence band is formed by Ge d states, which are not dominant in the chemical bonding. Strong hybridization of oxygen 2s states with 4p states of Ga and Ge revealed by the presence of an extra structure in the X-ray emission spectra has been found. The middle of the valence band has been demonstrated to be occupied by d states of Ga, while Ga and Ge 4рstates with a considerable admixture of oxygen 2p states form the top of the valence band.
R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd): Crystal structures with nets of Ir atoms

Energy Technology Data Exchange (ETDEWEB)

Yarema, Maksym [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Swiss Federal Laboratories for Materials Science and Technology (EMPA), Ueberlandstr. 129, CH-8600 Duebendorf (Switzerland); Zaremba, Oksana; Gladyshevskii, Roman [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Hlukhyy, Viktor, E-mail: viktor.hlukhyy@lrz.tu-muenchen.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F. [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-12-15

The crystal structures of the new ternary compounds Sm{sub 4}Ir{sub 13}Ge{sub 9} and LaIr{sub 3}Ge{sub 2} were determined and refined on the basis of single-crystal X-ray diffraction data. They belong to the Ho{sub 4}Ir{sub 13}Ge{sub 9} (oP52, Pmmn) and CeCo{sub 3}B{sub 2} (hP5, P6/mmm) structure types, respectively. The formation of isotypic compounds R{sub 4}Ir{sub 13}Ge{sub 9} with R=La, Ce, Pr, Nd, and RIr{sub 3}Ge{sub 2} with R=Ce, Pr, Nd, was established by powder X-ray diffraction. The RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) compounds exist only in as-cast samples and decompose during annealing at 800 Degree-Sign C with the formation of R{sub 4}Ir{sub 13}Ge{sub 9}. The structure of Sm{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting, slightly puckered nets of Ir atoms (4{sup 4})(4{sup 3}.6){sub 2}(4.6{sup 2}){sub 2} and (4{sup 4}){sub 2}(4{sup 3}.6){sub 4}(4.6{sup 2}){sub 2} that are perpendicular to [0 1 1] as well as to [0 -1 1] and [0 0 1]. The Ir atoms are surrounded by Ge atoms that form tetrahedra or square pyramids (where the layers intersect). The Sm and additional Ir atoms (in trigonal-planar coordination) are situated in channels along [1 0 0] (short translation vector). In the structure of LaIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets (3.6.3.6) perpendicular to [0 0 1]. These nets alternate along the short translation vector with layers of La and Ge atoms. - Graphical abstract: The crystal structures contain the nets of Ir atoms as main structural motif: R{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting slightly puckered nets of Ir atoms, whereas in the structure of RIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets. Highlights: Black-Right-Pointing-Pointer The Ir-rich ternary germanides R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) have been synthesized. Black-Right-Pointing-Pointer The RIr{sub 3}Ge{sub 2} compounds exist only in as-cast samples and decompose during annealing at 800
Structure of Ge(100) surfaces for high-efficiency photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Olson, J.M.; McMahon, W.E. [National Renewable Energy Lab., Golden, CO (United States)

1998-09-01

While much is known about the Ge(100) surface in a UHV/MBE environment, little has been published about this surface in an MOCVD environment. The main objective of this study is to determine the structure of the surface of Ge substrates in the typical MOCVD reactor immediately prior to and following the heteronucleation of GaAs and other lattice-matched III-V alloys, and to determine the conditions necessary for the growth of device-quality epilayers. In this paper the authors present the first STM images of the MOCVD-prepared Ge surfaces. Although many of the observed features are very similar to UHV- or MBE-prepared surfaces, there are distinct and important differences. For example, while the As-terminated surfaces for MBE-Ge and MOCVD-Ge are virtually identical, the AsH{sub 3}-treated surfaces in an MOCVD reactor are quite different. The terrace reconstruction is rotated by {pi}/2, and significant step bunching or faceting is also observed. Time-dependent RD kinetic studies also reveal, for the first time, several interesting features: the transition rate from an As-terminated (1 x 2) terrace reconstruction to a stable AsH{sub 3}-annealed surface is a function of the substrate temperature, substrate miscut from (100) and AsH{sub 3} partial pressure, and, for typical prenucleation conditions, is relatively slow. These results explain many of the empirically derived nucleation conditions that have been devised by numerous groups.
Microseismic monitoring of columnar jointed basalt fracture activity: a trial at the Baihetan Hydropower Station, China

Science.gov (United States)

Chen, Bing-Rui; Li, Qing-Peng; Feng, Xia-Ting; Xiao, Ya-Xun; Feng, Guang-Liang; Hu, Lian-Xing

2014-10-01

Severe stress release has occurred to the surrounding rocks of the typically columnar jointed basalt after excavation at the Baihetan Hydropower Station, Jinsha River, China, where cracking, collapse, and other types of failure may take place occasionally due to relaxation fracture. In order to understand the relaxation fracture characteristics of the columnar jointed basalt in the entire excavation process at the diversion tunnel of the Baihetan Hydropower Station, real-time microseismic monitoring tests were performed. First, the applicability of a geophone and accelerometer was analyzed in the columnar jointed basalt tunnel, and the results show that the accelerometer was more applicable to the cracking monitoring of the columnar jointed basalt. Next, the waveform characteristics of the microseismic signals were analyzed, and the microseismic signals were identified as follows: rock fracture signal, drilling signal, electrical signal, heavy vehicle passing signal, and blast signal. Then, the attenuation characteristics of the microseismic signals in the columnar jointed basalt tunnel were studied, as well as the types and characteristics of the columnar jointed basalt fracture. Finally, location analysis was conducted on the strong rock fracture events, in which four or more sensors were triggered, to obtain the temporal and spatial evolution characteristics and laws of the columnar jointed basalt relaxation fracture after excavation. The test results are not only of important reference value to the excavation and support of diversion tunnel at the Baihetan Hydropower Station, but also of great referential significance and value to the conduction of similar tests.
Columnar cell lesions and pseudoangiomatous hyperplasia like stroma: is there an epithelial-stromal interaction?

Science.gov (United States)

Recavarren, Rosemary A; Chivukula, Mamatha; Carter, Gloria; Dabbs, David J

2009-10-10

The significance of association between cancer and its microenvironment has been increasingly recognized. It has been shown in animal models that interaction between neoplastic epithelial cells and adjacent stroma can modulate tumor behavior. Carcinoma associated stromal cells can transform normal epithelial cells into neoplastic cells. In breast, columnar cell lesions are non-obligate precursors of low grade ductal carcinoma in situ. Columnar cell lesions can be seen intimately associated with PASH-like-stroma, a lesion we termed as CCPLS. Our aim is to investigate epithelial-stromal interactions in CCPLS and compare them to PASH without columnar cell lesions in breast core needle biopsies. Normal terminal duct lobular unit (TDLU) epithelium was seen in association with columnar cell lesions as well as PASH. Eight (8) cases of each category were examined by a panel of immunostains: CD117 (C-kit), CD34, CD105, bFGF, AR, ER-beta, MIB-1. We observed a markedly decreased expression of c-kit in columnar cell lesions compared to TDLU-epithelium. CD105 showed a quantitative increase in activated vessels in CCPLS compared to PASH. A subset of CCPLS and PASH were androgen receptor positive. A strong nuclear positivity for ER-beta is observed in the epithelium and stroma of all CCPLS cases. We conclude that (1) activated blood vessels predominate in CCPLS; (2) A molecular alteration is signified by c-kit loss in columnar cell lesions; (3) ER-beta and androgen receptor positivity indicate CCPLS are hormonally responsive lesions. Our study suggests an intimate vascular and hormone dependent epithelial-stromal interaction exists in CCPLS lesions.
Elastic phases in Gex Sb x Se 100-2x ternary glasses

Science.gov (United States)

Gunasekera, K.; Boolchand, P.; Micoulaut, M.

2011-03-01

The rigidity and stress phase transitions in titled ternary glasses are examined in Raman scattering, modulated DSC and molar volume measurements, and found to occur at x c (1) = 14.9% (rigidity) and x c (2) = 17.5% (stress). Raman scattering provides evidence of the structural motifs populated in these networks. Using Size Increasing Cluster Agglomeration, Rigidity theory and the decoded structural motifs, we have calculated the rigidity and stress transitions in the first step of agglomeration to occur at x c (1)t = 15.2 % and x c (2)t = 17.5 % respectively, in reasonable accord with experiments. Theory predicts and experiments confirm that these transitions will coalesce if edge-sharing Ge- tetrahedral motifs were absent in the structure, a circumstance that prevails in the Ge-deficient Ge 7 Sb x Se 93-x ternary, where a narrow IP is reported. These results underscore the central role played by topology in determining the elastic phases of network glasses. Supported by NSF grant DMR 08-53957.
Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

DEFF Research Database (Denmark)

Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

2014-01-01

Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....
Synthesis, structure, optical property, and electronic structure of Ba7AgGa5Se15

International Nuclear Information System (INIS)

Yin, Wenlong; He, Ran; Feng, Kai; Hao, Wenyu; Yao, Jiyong; Wu, Yicheng

2013-01-01

Graphical abstract: -- Highlights: •A new quaternary chalcogenide Ba 7 AgGa 5 Se 15 was synthesized. •It adopts a new structure type in the space group P31c of the trigonal system. •The structure contains a three-dimensional framework built from GaSe 4 and AgSe 4 tetrahedra. •Ba 7 AgGa 5 Se 15 is a direct semiconductor with the band gap of 2.60 (2) eV. •The electronic structure was calculated to explain the optical properties. -- Abstract: A new quaternary chalcogenide Ba 7 AgGa 5 Se 15 was synthesized by solid state reaction. It crystallizes in a new structure type in the noncentrosymmetric space group P31c of the trigonal system. In the structure, three Ga2Se 4 tetrahedra and one Ga1Se 4 tetrahedron are connected to each other by corner-sharing to form [Ga 4 Se 10 ] 8− anion clusters, which are further connected to AgSe 4 tetrahedra by corner-sharing to form a three-dimensional framework with Ba, Se7, and isolated Ga3Se 4 tetrahedra residing in the cavities. The optical band gap of 2.60 (2) eV for Ba 7 AgGa 5 Se 15 was deduced from the diffuse reflectance spectrum. From a band structure calculation, Ba 7 AgGa 5 Se 15 is a direct semiconductor and the transition between Se and Ba plays an important role in the band gap
Effect of pressure on the structural properties and electronic band structure of GaSe

Energy Technology Data Exchange (ETDEWEB)

Schwarz, U.; Olguin, D.; Syassen, K. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany); Cantarero, A. [Department of Materials Sciences, University of Valencia, 46000 Burjasot (Spain); Hanfland, M. [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble (France)

2007-01-15

The structural properties of GaSe have been investigated up to 38 GPa by monochromatic X-ray diffraction. The onset of the phase transition from the {epsilon}-GaSe to a disordered NaCl-type structural motif is observed near 21 GPa. Using the experimentally determined lattice parameters of the layered {epsilon}-phase as input, constrained ab-initio total energy calculations were performed in order to optimize the internal structural parameters at different pressures. The results obtained for the nearest-neighbor Ga-Se distance agree with those derived from recent EXAFS measurements. In addition, information is obtained on the changes of Ga-Ga and Se-Se bond lengths which were not accessible to a direct experimental determination yet. Based on the optimized structural parameters, we report calculations of band gap changes of {epsilon}-GaSe under pressure. The optical response and electronic band structure of the metallic high-pressure phase of GaSe are discussed briefly. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe1-x Sb x compounds

Science.gov (United States)

Guillou, F.; Pathak, A. K.; Hackett, T. A.; Paudyal, D.; Mudryk, Y.; Pecharsky, V. K.

2017-12-01

Experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R = rare-earth, T = transition metal and X = p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions 0.65 ≤slant x ≤slant 0.9 . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions 0 ≤slant x disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.
Application of portfolio analysis to the Dutch generating mix. Reference case and two renewables cases, year 2030, SE and GE scenario

International Nuclear Information System (INIS)

Jansen, J.C.; Beurskens, L.W.M.; Van Tilburg, X.

2006-02-01

This report presents results of an application of Markowitz Portfolio Theory (MPT) to the future portfolio of electricity generating technologies in the Netherlands in year 2030. Projections are made based on two specific scenarios constructed by the Netherlands Bureau for Economic Policy Analysis (CPB), i.e. 'Strong Europe (SE)' and 'Global Economy (GE)'. This study zooms in on the electricity cost risk dimension of the Dutch portfolio of generating technologies. Major results of this study are: (a) In both scenarios, the base variant is not very efficient. Graphical analysis suggests that diversification may yield up to 20% risk reduction at no extra cost; (b) Promotion of renewable energy can greatly decrease the portfolio risk. Defining mixes without renewables results in significantly riskier mixes with relatively small impact on portfolio costs; (c) Because of its relative low risk and high potential, large-scale implementation of offshore wind can reduce cost risk of the Dutch generating portfolio while only in the GE scenario a (small) upward effect on the projected Dutch electricity cost in year 2030 is foreseen. In a SE world large-scale implementation of offshore wind is projected to have a downward effect on Dutch electricity prices by the year 2030
Electronic structure and superconductivity of FeSe-related superconductors.

Science.gov (United States)

Liu, Xu; Zhao, Lin; He, Shaolong; He, Junfeng; Liu, Defa; Mou, Daixiang; Shen, Bing; Hu, Yong; Huang, Jianwei; Zhou, X J

2015-05-13

FeSe superconductors and their related systems have attracted much attention in the study of iron-based superconductors owing to their simple crystal structure and peculiar electronic and physical properties. The bulk FeSe superconductor has a superconducting transition temperature (Tc) of ~8 K and it can be dramatically enhanced to 37 K at high pressure. On the other hand, its cousin system, FeTe, possesses a unique antiferromagnetic ground state but is non-superconducting. Substitution of Se with Te in the FeSe superconductor results in an enhancement of Tc up to 14.5 K and superconductivity can persist over a large composition range in the Fe(Se,Te) system. Intercalation of the FeSe superconductor leads to the discovery of the AxFe2-ySe2 (A = K, Cs and Tl) system that exhibits a Tc higher than 30 K and a unique electronic structure of the superconducting phase. A recent report of possible high temperature superconductivity in single-layer FeSe/SrTiO3 films with a Tc above 65 K has generated much excitement in the community. This pioneering work opens a door for interface superconductivity to explore for high Tc superconductors. The distinct electronic structure and superconducting gap, layer-dependent behavior and insulator-superconductor transition of the FeSe/SrTiO3 films provide critical information in understanding the superconductivity mechanism of iron-based superconductors. In this paper, we present a brief review of the investigation of the electronic structure and superconductivity of the FeSe superconductor and related systems, with a particular focus on the FeSe films.
Comparative investigation of long-wave infrared generation based on ZnGeP{sub 2} and CdSe optical parametric oscillators

Energy Technology Data Exchange (ETDEWEB)

Bao-Quan, Yao; Gang, Li; Guo-Li, Zhu; Pei-Bei, Meng; You-Lun, Ju; Wang Yue-Zhu, E-mail: yaobq08@hit.edu.cn [National Key Laboratory of Tunable Laser Technology Harbin Institute of Technology Harbin 150001 (China)

2012-03-15

Long-wave infrared (IR) generation based on type-II (o{yields}e+o) phase matching ZnGeP{sub 2} (ZGP) and CdSe optical parametric oscillators (OPOs) pumped by a 2.05 {mu}m Tm,Ho:GdVO{sub 4} laser is reported. The comparisons of the bire-fringent walk-off effect and the oscillation threshold between ZGP and CdSe OPOs are performed theoretically and experimentally. For the ZGP OPO, up to 419 mW output at 8.04 {mu}m is obtained at the 8 kHz pump pulse repetition frequency (PRF) with a slope efficiency of 7.6%. This ZGP OPO can be continuously tuned from 7.8 to 8.5 {mu}m. For the CdSe OPO, we demonstrate a 64 mW output at 8.9 {mu}m with a single crystal 28 mm in length. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)
Local atomic structure and chemical order in amorphous SiGe:H and SiC:H alloys

International Nuclear Information System (INIS)

Pisarkiewicz, T.; Stapinski, T.

1994-01-01

The local structure and chemical ordering in amorphous hydrogenated silicon-germanium and silicon-carbon alloys were analyzed mainly with the help of extended x-ray absorption fine structure (EXAFS) spectroscopy, Raman scattering and electron diffraction. Ge-Ge and Ge-Si distances were found to be independent of concentration and the composition of the first coordination shell around Ge is consistent with a random mixing of the two species in a-Si 1-x Ge:H alloy. The first-coordination-shell average bond lengths for Si-Si and SiC in a-Si 1-x C x :H are also constant with concentration x and the comparison of the first coordination shell composition around Si with average concentration indicates that the alloys tends to be chemically ordered. The degree of crystallinity in microcrystalline Si films determined by EXAFS is in agreement with that obtained in Raman scattering analysis. (author). 16 refs, 5 figs
DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces.

Science.gov (United States)

Dash, J K; Rath, A; Juluri, R R; Raman, P Santhana; Müller, K; Rosenauer, A; Satyam, P V

2011-04-06

We report the growth of Ge nanostructures and microstructures on ultraclean, high vicinal angle silicon surfaces and show that self-assembled growth at optimum thickness of the overlayer leads to interesting shape transformations, namely from nanoparticle to trapezoidal structures, at higher thickness values. Thin films of Ge of varying thickness from 3 to 12 ML were grown under ultrahigh vacuum conditions on a Si(5 5 12) substrate while keeping the substrate at a temperature of 600 °C. The substrate heating was achieved by two methods: (i) by heating a filament under the substrate (radiative heating, RH) and (ii) by passing direct current through the samples in three directions (perpendicular, parallel and at 45° to the (110) direction of the substrate). We find irregular, more spherical-like island structures under RH conditions. The shape transformations have been found under DC heating conditions and for Ge deposition more than 8 ML thick. The longer sides of the trapezoid structures are found to be along (110) irrespective of the DC current direction. We also show the absence of such a shape transformation in the case of Ge deposition on Si(111) substrates. Scanning transmission electron microscopy measurements suggested the mixing of Ge and Si. This has been confirmed with a quantitative estimation of the intermixing using Rutherford backscattering spectrometry (RBS) measurements. The role of DC heating in the formation of aligned structures is discussed. Although the RBS simulations show the presence of a possible SiO(x) layer, under the experimental conditions of the present study, the oxide layer would not play a role in determining the formation of the various structures that were reported here.
Structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} and ZnGeN{sub 2}:Mn{sup 2+} for field emission displays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Q.-H. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Guangzhou Research Institute of Non-ferrous Metals, Guangzhou, Guangdong 510651 (China); Wang, J., E-mail: ceswj@mail.sysu.edu.cn [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Yeh, C.-W.; Ke, W.-C.; Liu, R.-S. [Department of Chemistry, National Taiwan University, Taipei 106, Taiwan (China); Tang, J.-K. [Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071 (United States); Xie, M.-B.; Liang, H.-B.; Su, Q. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)

2010-12-15

Yellowish-orange-emitting ZnGeN{sub 2} and orange-red-emitting ZnGeN{sub 2}:Mn were synthesized by a facile and mild gas-reduction-nitridation reaction at 1153 K under NH{sub 3} flow with air-stable raw materials ZnO, GeO{sub 2} and MnCO{sub 3}. The structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} doped with or without Mn{sup 2+} were systematically investigated. Rietveld refinements show that the as-synthesized samples are obtained as single-phase compounds and crystallize as an orthorhombic structure with a space group of Pna2{sub 1}. The actual chemical composition of the as-prepared ZnGeN{sub 2} determined by energy dispersive X-ray spectroscopy suggests that the Ge vacancy defects probably exist in the host. The SEM image reveals that the Zn{sub 0.99}Mn{sub 0.01}GeN{sub 2} particles form aggregates {approx}500-600 nm in size. The diffuse reflection spectrum and photoluminescence excitation spectrum confirm that the band edge absorption of ZnGeN{sub 2} at low energy is 3.3 eV ({approx}376 nm). Upon UV light excitation and electron beam excitation, ZnGeN{sub 2} gives an intense yellowish-orange emission around 580-600 nm, associated with a deep defect level due to the Ge vacancy defects, and ZnGeN{sub 2}:Mn shows an intense red emission at 610 nm due to the {sup 4}T{sub 1g}({sup 4}G) {yields} 6A{sub 1g}({sup 6}S) of Mn{sup 2+}. The unusual red emission of Mn{sup 2+} in tetrahedral Zn{sup 2+} sites is attributed to the strong nephelauxetic effect between Mn{sup 2+} and the surrounding tetrahedrally coordinated nitrogen. The photoluminescence and cathodoluminescence emission colors of ZnGeN{sub 2}:Mn have a high color purity of {approx}93-98%. These results demonstrate that ZnGeN{sub 2}:Mn is a novel, promising red-emitting nitride, potentially applicable to field emission displays with brilliant color-rendering properties and a large color gamut.

Structure and properties of GeS2-Ga2S3-CdI2 chalcohalide glasses

International Nuclear Information System (INIS)

Guo Haitao; Zhai Yanbo; Tao Haizheng; Dong Guoping; Zhao Xiujian

2007-01-01

Chalcohalide glasses in the GeS 2 -Ga 2 S 3 -CdI 2 pseudo-ternary system were prepared by 3-5N pure raw materials. Structures of these glasses were studied with Raman spectroscopy. Several properties, namely, glass transition temperature, optical transmission, density and microhardness have also been measured. Based on the Raman spectra, it can be speculated that the glass network is mainly constituted by [GeS 4 ], [GaS 4 ] tetrahedra with some mixed-anion tetrahedra [S 3 GeI], [S 2 GeI 2 ] and [S 3 GaI], which are interconnected by bridging sulfurs and/or short S-S chains. In the glasses with little CdI 2 , some part of Ge(Ga) exists in the forms of the ethane-like units [S 3 (Ga)Ge-Ge(Ga)S 3 ] because of the lack of sulfur, but the amount of these units will decrease with the addition of CdI 2 . Additionally, in the glasses with high content of CdI 2 , some [CdI n ] structural units (s.u.) will be formed and dispersed homogenously in glass network. These novel glasses have relatively high glass transition temperatures (T g ranges from 512 to 670 K), good thermal stabilities (the maximum of difference between T x and T g is 185 K) and UV-vis optical transmission, large densities (d ranges from 3.162 to 3.863 g/cm 3 ) and microhardness (large than 150 kg/mm 2 generally). All properties evolutions follow the structural variations
Novel Au- and Ge-based two-dimensional materials formed through topotactic transitions of AlB2-like structures

Science.gov (United States)

Tsetseris, Leonidas

2016-07-01

The topotactic reaction of a layered compound, for example CaGe2, with HCl solution is a common and facile method to produce two-dimensional (2D) materials. In this work we demonstrate with first-principles calculations that this technique can potentially lead to a whole new family of 2D materials starting from three-dimensional crystals with AlB2-like structures. As representative cases, we show here that the de-intercalation of Sc and Ca atoms from ScAuGe and Ca2AuGe3 crystals is strongly exothermic and produces the stable 2D monolayers AuGeH and AuGe3H3, respectively. Remarkably, both metals (AuGeH) and semiconductors (AuGe3H3) can be prepared by this method. Based on the broad availability of AlB2-like structures with varying stoichiometries, there are several possibilities to prepare novel functional 2D materials with suitable topotactic transitions.
Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

Science.gov (United States)

Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

2017-10-30

We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.
Investigation of electron exchange between neutral and ionized centers of germanium in PbSe

International Nuclear Information System (INIS)

Terukov, I.E.; Khuzhakulov, Eh.S.

2005-01-01

The 73 As( 73 Ge) emission Moessbauer spectroscopy is applied to study the electron exchange between neutral ionized states of the germanium donor center in PbSe. It is shown that the charge state of the antistructural 73 Ge defect, generating in the anion PbSe sublattice after 73 As radioactive decay, does not depend on the Fermi level location. In contrast to this, the 73 Ge center in the cation PbSe sublattice is the isoelectronic substitution impurity. The analysis of emission Moessbauer spectra of p-type PbSe: 73 As testifies about the presence of the fast electron exchange between neutral and ionized donor Ge centers in PbSe [ru
Columnar apple tree named 'Moonlight'

OpenAIRE

Tupý, J. (Jaroslav); Louda, O. (Otto); Zima, J. (Jan)

2010-01-01

A new and distinct Malus domestica (Borkh.) apple tree variety is provided which exhibits a columnar tree type, weakly vigorous compact growth, predominant bearing on spurs and V.sub.f-resistance against scab. The new variety yields late maturing, medium-sized, globose-conical to conical fruits having good storage quality. The fruit color is yellow-green to yellow with a partial red to orange blush. The fruits have a yellow-colored firm flesh that is crisp and juicy with a good sweet/sour bal...
Effect of Preparation Method on Phase Formation Process and Structural and Magnetic Properties of Mn2.5Ge Samples

Directory of Open Access Journals (Sweden)

R. Sobhani

2016-12-01

Full Text Available In this paper, the phase formation process of Mn2.5Ge samples, prepared by mechanical alloying of Mn and Ge metal powders and annealing, has been studied. Results showed that in the milled samples the stable phase is Mn11Ge8 compound with orthorhombic structure and Pnam space group. The value of saturation magnetization increases by increasing milling time from 0.2 up to 1.95 (Am2Kg-1. The remanece of the samples increases by increasing the milling time while the coercivity decreases. Annealing of 15-hour milled sample results in disappearance of Mn and Ge and the formation of new phases of Mn3Ge, Mn5Ge2, Mn5Ge3 and Mn2.3Ge. Mn3Ge is the main phase with Do22 tetragonal structure and I4/mmm space group which is stable and dominant. The enhancement of saturation magnetization in the annealed sample is related to the formation of three new magnetic phases and the increase of coercivity is due to the presence of Mn3Ge compound with tetragonal structure. Studies were replicated on samples made by arc melting method to compare the results and to investigate the effect of the preparation method on phase formation and structural and magnetic properties of the materials. In these samples the saturation value was in range of 0.2 up to 1.95 (Am2Kg-1 depending on preparation methods. Rietveld refinement shows that Mn2.3Ge sample prepared from arc melted under 620oC anealing is single phase. Magnetic analysis of this sample show a saturation magnetization of 5.252(Am2Kg-1 and 0.005 T coercive field.
Lateral structure of (TiSe2)n(NbSe2)m superlattices

International Nuclear Information System (INIS)

Noh, M.; Shin, H.; Jeong, K.; Spear, J.; Johnson, D.C.; Kevan, S.D.; Warwick, T.

1997-01-01

The structures of a series of (TiSe 2 ) n (NbSe 2 ) m superlattices grown through controlled crystallization of designed multilayer reactants have been studied. X-ray diffraction of the data of the superlattices after crystallization show considerable preferred orientation, with the basal plane of the dichalcogenide structure parallel to the substrate to within 0.1 degree. Lattice refinement using the observed (00scr(l)) diffraction maxima yields lattice parameters along the c axis that are consistent with those expected based on the target superlattices and lattice parameters of the binary constituents. These (00scr(l)) diffraction data, however, contain no information about the crystalline structure in the ab plane of the superlattice associated with the preferred c-axis orientation. Off-specular x-ray diffraction (XRD), scanning electron microscopy, and scanning transmission x-ray microscopy (STXM) were used to explore the structure and homogeneity of the superlattices in the ab plane. XRD results rule out preferred long-range orientational order of the ab plane. Between grains, both the backscattered electron images and STXM images show grain domain structure in the ab plane with a characteristic grain domain size of approximately 50 μm. X-ray absorption microscopy in the STXM mode obtained at the Ti L 2,3 edge shows that the titanium in the superlattices is present as both octahedral Ti consistent with the TiSe 2 structure and metallic Ti. A comparison of the data obtained from these techniques highlights chemical information, which can be deduced on a submicrometer range from the space resolved spectra obtained using STXM. copyright 1997 American Institute of Physics
Synthesis and structure of novel lithium-ion conductor Li{sub 7}Ge{sub 3}PS{sub 12}

Energy Technology Data Exchange (ETDEWEB)

Inoue, Yuki [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Suzuki, Kota [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Matsui, Naoki [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Hirayama, Masaaki [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Kanno, Ryoji, E-mail: kanno@echem.titech.ac.jp [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan)

2017-02-15

The novel lithium-ion conductor Li{sub 7}Ge{sub 3}PS{sub 12} was synthesized by slow cooling from the ternary Li{sub 2}S–GeS{sub 2}–P{sub 2}S{sub 5} system, and was shown to exhibit a cubic argyrodite-type structure. The phase composition was determined by varying the ratio of starting materials; the observed monophasic properties were close to those for the Li{sub 7}Ge{sub 3}PS{sub 12} composition. The lattice parameter (a =9.80192(3) Å) of Li{sub 7}Ge{sub 3}PS{sub 12} was slightly smaller than that of Li{sub 7}PS{sub 6} (a =9.993 Å), indicating that substitution of a Li cation by the smaller Ge cation contracted the cubic lattice. In addition, the novel structure consisted of a framework composed of four isolated (Ge/P)S{sub 4} tetrahedra. Li{sup +} ions occupied tetrahedral sites within the framework, forming a three-dimensional conduction pathway. Finally, Li{sub 7}Ge{sub 3}PS{sub 12} exhibited a high ionic conductivity of 1.1×10{sup −4} S cm{sup −1} at 25 °C and an activation energy of 25 kJ mol{sup −1}. - Graphical abstract: A novel Li{sub 7}Ge{sub 3}PS{sub 12} solid lithium ion conductor, with cubic argyrodite strucuture, shows high ion conductivity of 1.1×10{sup –4} S cm{sup –1} with an activation energy of 25 kJ mol{sup –1}. The argyrodite structure consists of (Ge/P)S{sub 4} tetrahedra units along with partial occupation of lithium and germanium at 48 h site. - Highlights: • A novel lithium-ion conductor Li{sub 7}Ge{sub 3}PS{sub 12} was detected. • This was achieved through slow cooling of the ternary Li{sub 2}S–GeS{sub 2}–P{sub 2}S{sub 5} system. • This novel conductor revealed a cubic argyrodite-type structure. • Li{sub 7}Ge{sub 3}PS{sub 12} exhibited a high ionic conductivity of 1.1×10{sup −4} S cm{sup −1} at 25 °C. • These properties will aid in the design of superior lithium-ion conductors.
Strain engineering on electronic structure and carrier mobility in monolayer GeP3

Science.gov (United States)

Zeng, Bowen; Long, Mengqiu; Zhang, Xiaojiao; Dong, Yulan; Li, Mingjun; Yi, Yougen; Duan, Haiming

2018-06-01

Using density functional theory coupled with the Boltzmann transport equation with relaxation time approximation, we have studied the strain effect on the electronic structure and carrier mobility of two-dimensional monolayer GeP3. We find that the energies of valence band maximum and conduction band minimum are nearly linearly shifted with a biaxial strain in the range of ‑4% to 6%, and the band structure experiences a remarkable transition from semiconductor to metal with the appropriate compression (‑5% strain). Under biaxial strain, the mobility of the electron and hole in monolayer GeP3 reduces and increases by more than one order of magnitude, respectively. It is suggested that it is possible to perform successive transitions from an n-type semiconductor (‑4% strain) to a good performance p-semiconductor (+6% strain) by applying strain in monolayer GeP3, which is potentially useful for flexible electronics and nanosized mechanical sensors.
Sub-barrier fusion of 27Al + 70,72,73,74,76Ge. Evidence for shape transition and structure effects

International Nuclear Information System (INIS)

Aguilera, E.F.; Vega, J.J.; Kolata, J.J.; Tighe, R.G.; Kong, X.J.; Morsad, A.

1990-01-01

Fusion excitation functions were obtained for 27 Al + 70,72,73,74,76 Ge at energies from about 6 MeV below to 7 MeV above the Coulomb barrier. One-dimensional barrier penetration model calculations with one free parameter yield parameters in good agreement with the systematics for fusion above the barrier. Large low-energy enhancements are observed whose trend suggests the presence of a structural change between 70,72 Ge and 73,74,76 Ge. Within the context of simple model calculations, this trend is explained as arising from the odd-A structure of 73 Ge on one hand, and from a spherical (or oblate) to prolate shape transition between 70,72,73 Ge and 74,76 Ge, on the other hand
Neutron diffraction studies on structural and magnetic properties of RE2NiGe3 (RE=La, Ce)

International Nuclear Information System (INIS)

Kalsi, Deepti; Rayaprol, S.; Siruguri, V.; Peter, Sebastian C.

2014-01-01

We report the crystallographic properties of RE 2 NiGe 3 (RE=La, Ce) synthesized by arc melting. Rietveld refinement on the powder neutron diffraction (ND) data suggest both compounds are isostructural and crystallize in the non-centrosymmetric Er 2 RhSi 3 type structure having hexagonal space group P6 ¯ 2c. In the crystal structure of RE 2 NiGe 3 , two dimensional arrangements of nickel and germanium atoms lead to the formation of hexagonal layers with rare earth atoms sandwiched between them. Magnetic susceptibility measurements performed in low fields exhibit antiferromagnetic ordering in cerium compound around (T o =) 3.2 K. Neutron diffraction measurements at 2.8 K (i.e., at TGe 3 and Ce 2 NiGe 3 crystallize in the Er 2 RhSi 3 type. Magnetic susceptibility show antiferromagnetic ordering for Ce 2 NiGe 3 at 3.2 K and neutron diffraction confirms the absence of long range ordering. - Highlights: RE 2 NiGe 3 (RE=La, Ce) crystallize in the ordered superstructure of the AlB 2 type. Magnetic susceptibility measurements exhibit antiferromagnetic ordering in Ce 2 NiGe 3 . Structure and magnetism of RE 2 NiGe 3 (RE=La, Ce) are studied by neutron diffraction
Electronic structure of Co islands grown on the {radical}3 x {radical}3-Ag/Ge(111) surface

Energy Technology Data Exchange (ETDEWEB)

Huang, Xiao-Lan; Chou, Chi-Hao; Lin, Chun-Liang; Tomaszewska, Agnieszka; Fu, Tsu-Yi, E-mail: phtifu@phy.ntnu.edu.tw

2011-09-30

By means of room temperature scanning tunneling spectroscopy (RT STS), we have studied the electronic structure of two different Ag/Ge(111) phases as well as Co islands grown on the {radical}3 x {radical}3-Ag/Ge (111) forming either {radical}13 x {radical}13 or 2 x 2 patterns. The spectrum obtained from 4 x 4-Ag/Ge(111) structure shows the existence of a shoulder at 0.7 V which is also present in the electronic structure of the Ge(111)-c2 x 8 and indicates donation of Ge electrons to electronic states of the Ag-driven phase. However, this fact is not supported by the electronic spectrum taken from the {radical}3 x {radical}3-Ag/Ge (111). The complexity of the Co-{radical}13 x {radical}13 islands bonding with the substrate is mirrored by a large number of peaks in their electronic spectra. The spectra obtained from the Co-2 x 2 islands which had grown on the step differ from those taken from Co-2 x 2 islands located along the edge of the terrace by a number of peaks at negative sample bias. This discrepancy is elucidated in terms of dissimilarities of Co-substrate interaction accompanying Co islands growth on different areas of the stepped surface.
Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

Science.gov (United States)

Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

2018-06-01

Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.
Structural and optical properties of nanocrystalline CdSe and Al:CdSe thin films for photoelectrochemical application

Energy Technology Data Exchange (ETDEWEB)

Gawali, Sanjay A. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004 (India); Bhosale, C.H., E-mail: bhosale_ch@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004 (India)

2011-10-03

Highlights: {yields} The CdSe and Al:CdSe thin films have been successfully deposited by SPT. {yields} Hexagonal cubic structured CdSe and Al: CdSe thin films are observed. {yields} Large number of fine grains, Uniform and compact growth morphology. {yields} Hydrophilic surface nature. {yields} Al:CdSe have better PEC performance than CdSe. - Abstract: Nanocrystalline CdSe and Al:CdSe semiconductor thin films have been successfully synthesized onto amorphous and FTO glass substrates by spray pyrolysis technique. Aqueous solutions containing precursors of Cd and Se have been used to obtain good quality films. The optimized films have been characterized for their structural, morphological, wettability and optical properties. X-ray diffraction (XRD) studies show that the films are polycrystalline in nature with hexagonal crystal structure. Scanning electron microscopy (SEM) studies show that the film surface is smooth, uniform and compact in nature. Water wettability study reveals that the films are hydrophilic behavior. The formation of CdSe and Al:CdSe thin film were confirmed with the help of FTIR spectroscopy. UV-vis spectrophotometric measurement showed a direct allowed band gap lying in the range 1.673-1.87 eV. Output characteristics were studied by using cell configuration n- CdSe/Al:CdSe |1 M (NaOH + Na{sub 2} + S)|C. An efficient solar cell having a power conversion efficiency of 0.38% at illumination 25 mW cm{sup -2} was fabricated.
Evaluation of the hormonal state of columnar apple trees (Malus x domestica) based on high throughput gene expression studies.

Science.gov (United States)

Krost, Clemens; Petersen, Romina; Lokan, Stefanie; Brauksiepe, Bastienne; Braun, Peter; Schmidt, Erwin R

2013-02-01

The columnar phenotype of apple trees (Malus x domestica) is characterized by a compact growth habit with fruit spurs instead of lateral branches. These properties provide significant economic advantages by enabling high density plantings. The columnar growth results from the presence of a dominant allele of the gene Columnar (Co) located on chromosome 10 which can appear in a heterozygous (Co/co) or homozygous (Co/Co) state. Although two deep sequencing approaches could shed some light on the transcriptome of columnar shoot apical meristems (SAMs), the molecular mechanisms of columnar growth are not yet elaborated. Since the influence of phytohormones is believed to have a pivotal role in the establishment of the phenotype, we performed RNA-Seq experiments to study genes associated with hormone homeostasis and clearly affected by the presence of Co. Our results provide a molecular explanation for earlier findings on the hormonal state of columnar apple trees. Additionally, they allow hypotheses on how the columnar phenotype might develop. Furthermore, we show a statistically approved enrichment of differentially regulated genes on chromosome 10 in the course of validating RNA-Seq results using additional gene expression studies.
Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

Directory of Open Access Journals (Sweden)

Wanshun Zhao

2013-04-01

Full Text Available We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC thin films on silicon substrates by using graphene–graphitic carbon nanoflakes (GGNs templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD. The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM. Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200–400 nm are synthesized on the GGNs, which form compact SiC thin films.
Fast Formation of Opal-like Columnar Colloidal Crystals

NARCIS (Netherlands)

van der Beek, D.; Radstake, P.B.; Petukhov, A.V.; Lekkerkerker, H.N.W.

2007-01-01

We demonstrate that highly polydisperse colloidal gibbsite platelets easily form an opal-like columnar crystal with striking iridescent Bragg reflections. The formation process can be accelerated by orders of magnitude under a centrifugation force of 900g without arresting the system in a disordered
The pinning property of Bi-2212 single crystals with columnar defects

International Nuclear Information System (INIS)

Okamura, Kazunori; Kiuchi, Masaru; Otabe, Edmund Soji; Yasuda, Takashi; Matsushita, Teruo; Okayasu, Satoru

2004-01-01

It is qualitatively understood that the condensation energy density in oxide superconductors, which is one of the essential parameters for determining their pinning strength, becomes large with increasing dimensionality of the superconductor. However, the condensation energy density has not yet been evaluated quantitatively. Its value can be estimated from the elementary pinning force of a known defect. Columnar defects created by heavy ion irradiation are candidates for being such defects. That is, the size and number density of columnar defects can be given. In addition, it is known that two-dimensional vortices like those in Bi-2212 are forced into three-dimensional states by these defects in a magnetic field parallel to the defects. Thus, the condensation energy density can be estimated from the pinning property of the columnar defects even for two-dimensional superconductors. A similar analysis was performed also for three-dimensional Y-123. A discussion is given of the relationship between the condensation energy density and the anisotropy parameter estimated from measurements of anisotropic resistivity and peak field
Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

Energy Technology Data Exchange (ETDEWEB)

Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

2016-06-07

In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.
Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

International Nuclear Information System (INIS)

Yan Wensheng; Li Zhongrui; Sun Zhihu; Wei Shiqiang; Kolobov, A. V.

2007-01-01

The formation mechanism of Ge nanocrystals for Ge (60 mol%) embedded in a SiO2 matrix grown on Si(001) and quartz-glass substrates was studied by fluorescence x-ray absorption fine structure (XAFS). It was found that the formation of Ge nanocrystals strongly depends on the properties of the substrate materials. In the as-prepared samples, Ge atoms exist in amorphous Ge and GeO2 phases. At the annealing temperature of 1073 K, on the quartz-glass substrate, Ge nanocrystals are only formed predominantly from the amorphous Ge phase in the as-prepared sample. However, on the Si(100) substrate the Ge nanocrystals are generated partly from amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis revealed that about 10% of GeO2 in as-prepared sample permutated with Si in the wafer and formed Ge nanocrystals

Low temperature magnetic structure of MnSe

Indian Academy of Sciences (India)

Abstract. In this paper we report low temperature neutron diffraction studies on MnSe in order to understand the anomalous behaviour of their magnetic and transport prop- erties. Our study indicates that at low temperatures MnSe has two coexisting crystal structures, high temperature NaCl and hexagonal NiAs. NiAs phase ...
MESOSCALE SIMULATIONS OF MICROSTRUCTURE AND TEXTURE EVOLUTION DURING DEFORMATION OF COLUMNAR GRAINS

International Nuclear Information System (INIS)

Sarma, G.

2001-01-01

In recent years, microstructure evolution in metals during deformation processing has been modeled at the mesoscale by combining the finite element method to discretize the individual grains with crystal plasticity to provide the constitutive relations. This approach allows the simulations to capture the heterogeneous nature of grain deformations due to interactions with neighboring grains. The application of this approach to study the deformations of columnar grains present in solidification microstructures is described. The microstructures are deformed in simple compression, assuming the easy growth direction of the columnar grains to be parallel to the compression axis in one case, and perpendicular in the other. These deformations are similar to those experienced by the columnar zones of a large cast billet when processed by upsetting and drawing, respectively. The simulations show that there is a significant influence of the initial microstructure orientation relative to the loading axis on the resulting changes in grain shape and orientation
FP-(LAPW + lo study of mechanical stability and electronic behavior of CoGe in B20 structure

Directory of Open Access Journals (Sweden)

Timaoui M. A.

2017-10-01

Full Text Available The aim of this work is a theoretical study of structural, elastic, electronic and thermal properties of CoGe compound in B20 structure using All-electron self-consistent Full Potential Augmented Plane Waves plus local orbital “FP(LAPW + lo” within the framework of Density Functional Theory DFT. GGA-PBEsol is the exchange-correlation potential selected in this work. This choice is motivated by the success of this functional in predicting structural and mechanical properties of solids. The values obtained by the study of structural properties are in very good agreement with those found previously. In this work, the elastic constants have been predicted for the first time and the obtained values confirm the mechanical stability of the CoGe compound in its B20 structure. The electronic part of this work shows that CoGe has metallic behavior with a mixed bonding between cobalt and germanium of covalent-metallic type. The effect of temperature and hydrostatic pressure on the lattice parameter - a0, heat capacity at constant volume - CV, thermal expansion coefficient - α and entropy - S of the CoGe have been studied using Debye model.
Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

Science.gov (United States)

Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

2014-03-01

The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.
Columnar discharge mode between parallel dielectric barrier electrodes in atmospheric pressure helium

Energy Technology Data Exchange (ETDEWEB)

Hao, Yanpeng; Zheng, Bin; Liu, Yaoge [School of Electric Power, South China University of Technology, Guangzhou 510640 (China)

2014-01-15

Using a fast-gated intensified charge-coupled device, end- and side-view photographs were taken of columnar discharge between parallel dielectric barrier electrodes in atmospheric pressure helium. Based on three-dimensional images generated from end-view photographs, the number of discharge columns increased, whereas the diameter of each column decreased as the applied voltage was increased. Side-view photographs indicate that columnar discharges exhibited a mode transition ranging from Townsend to glow discharges generated by the same discharge physics as atmospheric pressure glow discharge.
Reproducible challenge model to investigate the virulence of Flavobacterium columnare genomovars in rainbow trout Oncorhynchus mykiss

Science.gov (United States)

Flavobacterium columnare is a Gram-negative bacterium that causes columnaris disease and has significant economic impacts on aquaculture production worldwide. Molecular analyses have demonstrated that there is genetic diversity among F. columnare isolates. A review of the published literature that u...
Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

OpenAIRE

Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

2013-01-01

We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...
Columnar metaplasia in a surgical mouse model of gastro-esophageal reflux disease is not derived from bone marrow-derived cell.

Science.gov (United States)

Aikou, Susumu; Aida, Junko; Takubo, Kaiyo; Yamagata, Yukinori; Seto, Yasuyuki; Kaminishi, Michio; Nomura, Sachiyo

2013-09-01

The incidence of esophageal adenocarcinoma has increased in the last 25 years. Columnar metaplasia in Barrett's mucosa is assumed to be a precancerous lesion for esophageal adenocarcinoma. However, the induction process of Barrett's mucosa is still unknown. To analyze the induction of esophageal columnar metaplasia, we established a mouse gastro-esophageal reflux disease (GERD) model with associated development of columnar metaplasia in the esophagus. C57BL/6 mice received side-to-side anastomosis of the esophagogastric junction with the jejunum, and mice were killed 10, 20, and 40 weeks after operation. To analyze the contribution of bone marrow-derived cells to columnar metaplasia in this surgical GERD model, some mice were transplanted with GFP-marked bone marrow after the operation. Seventy-three percent of the mice (16/22) showed thickened mucosa in esophagus and 41% of mice (9/22) developed columnar metaplasia 40 weeks after the operation with a mortality rate of 4%. Bone marrow-derived cells were not detected in columnar metaplastic epithelia. However, scattered epithelial cells in the thickened squamous epithelia in regions of esophagitis did show bone marrow derivation. The results demonstrate that reflux induced by esophago-jejunostomy in mice leads to the development of columnar metaplasia in the esophagus. However, bone marrow-derived cells do not contribute directly to columnar metaplasia in this mouse model. © 2013 Japanese Cancer Association.
Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy

International Nuclear Information System (INIS)

Hecker, M; Roelke, M; Hermann, P; Zschech, E; Vartanian, V

2010-01-01

Strained silicon underneath the field-effect transistor gate increases significantly the charge carrier mobility and thus improves the performance of leading-edge Complementary Metal Oxide Semiconductor (CMOS) devices. For better understanding of the structure-strain relationship on the nanoscale and for optimization of device structures, the measurement of the local strain state has become essential. Raman spectroscopy is used in the present investigation to analyze the strain distribution in and close to silicon/embedded silicon-germanium (SiGe) line structures in conjunction with strain modeling applying finite element analysis. Both experimental results and modeling indicate the impact of geometry on the stress state. An increase of compressive stress within the Si lines is obtained for increasing SiGe line widths and decreasing Si line widths. The stress state within the Si lines is shown to be a mixed one deviating from a pure uniaxial state. Underneath the SiGe cavities, the presence of a tensile stress was observed. To investigate a procedure to scale down the spatial resolution of the Raman measurements, tip-enhanced Raman scattering experiments have been performed on free-standing SiGe lines with 100nm line width and line distance. The results show superior resolution and strain information not attainable in conventional Raman scans.
A theoretical study of CsI:Tl columnar scintillator image quality parameters by analytical modeling

Energy Technology Data Exchange (ETDEWEB)

Kalyvas, N., E-mail: nkalyvas@teiath.gr; Valais, I.; Michail, C.; Fountos, G.; Kandarakis, I.; Cavouras, D.

2015-04-11

Medical X-ray digital imaging systems such as mammography, radiography and computed tomography (CT), are composed from efficient radiation detectors, which can transform the X-rays to electron signal. Scintillators are materials that emit light when excited by X-rays and incorporated in X-ray medical imaging detectors. Columnar scintillator, like CsI:T1 is very often used for X-ray detection due to its higher performance. The columnar form limits the lateral spread of the optical photons to the scintillator output, thus it demonstrates superior spatial resolution compared to granular scintillators. The aim of this work is to provide an analytical model for calculating the MTF, the DQE and the emission efficiency of a columnar scintillator. The model parameters were validated against published Monte Carlo data. The model was able to predict the overall performance of CsI:Tl scintillators and suggested an optimum thickness of 300 μm for radiography applications. - Highlights: • An analytical model for calculating MTF, DQE and Detector Optical Gain (DOG) of columnar phosphors was developed. • The model was fitted to published efficiency and MTF Monte Carlo data. • A good fit was observed for 300 µm columnar CsI:Tl thickness. • The performance of the 300 µm column thickness CsI:Tl was better in terms of MTF and DOG for radiographic applications.
Ultra-thin ZnSe: Anisotropic and flexible crystal structure

Energy Technology Data Exchange (ETDEWEB)

Bacaksiz, C., E-mail: cihanbacaksiz@iyte.edu.tr [Department of Physics, Izmir Institute of Technology, 35430 Izmir (Turkey); Senger, R.T. [Department of Physics, Izmir Institute of Technology, 35430 Izmir (Turkey); Sahin, H. [Department of Photonics, Izmir Institute of Technology, 35430 Izmir (Turkey)

2017-07-01

Highlights: • Ultra-thin ZnSe is dynamically stable. • Ultra-thin ZnSe is electronically direct-gap semiconductor. • Ultra-thin ZnSe is ultra-flexible. • Ultra-thin ZnSe is mechanically in-plane anisotropic. - Abstract: By performing density functional theory-based calculations, we investigate the structural, electronic, and mechanical properties of the thinnest ever ZnSe crystal . The vibrational spectrum analysis reveals that the monolayer ZnSe is dynamically stable and has flexible nature with its soft phonon modes. In addition, a direct electronic band gap is found at the gamma point for the monolayer structure of ZnSe. We also elucidate that the monolayer ZnSe has angle dependent in-plane elastic parameters. In particular, the in-plane stiffness values are found to be 2.07 and 6.89 N/m for the arm-chair and zig-zag directions, respectively. The angle dependency is also valid for the Poisson ratio of the monolayer ZnSe. More significantly, the in-plane stiffness of the monolayer ZnSe is the one-tenth of Young modulus of bulk zb-ZnSe which indicates that the monolayer ZnSe is a quite flexible single layer crystal. With its flexible nature and in-plane anisotropic mechanical properties, the monolayer ZnSe is a good candidate for nanoscale mechanical applications.
Ultra-thin ZnSe: Anisotropic and flexible crystal structure

International Nuclear Information System (INIS)

Bacaksiz, C.; Senger, R.T.; Sahin, H.

2017-01-01

Highlights: • Ultra-thin ZnSe is dynamically stable. • Ultra-thin ZnSe is electronically direct-gap semiconductor. • Ultra-thin ZnSe is ultra-flexible. • Ultra-thin ZnSe is mechanically in-plane anisotropic. - Abstract: By performing density functional theory-based calculations, we investigate the structural, electronic, and mechanical properties of the thinnest ever ZnSe crystal . The vibrational spectrum analysis reveals that the monolayer ZnSe is dynamically stable and has flexible nature with its soft phonon modes. In addition, a direct electronic band gap is found at the gamma point for the monolayer structure of ZnSe. We also elucidate that the monolayer ZnSe has angle dependent in-plane elastic parameters. In particular, the in-plane stiffness values are found to be 2.07 and 6.89 N/m for the arm-chair and zig-zag directions, respectively. The angle dependency is also valid for the Poisson ratio of the monolayer ZnSe. More significantly, the in-plane stiffness of the monolayer ZnSe is the one-tenth of Young modulus of bulk zb-ZnSe which indicates that the monolayer ZnSe is a quite flexible single layer crystal. With its flexible nature and in-plane anisotropic mechanical properties, the monolayer ZnSe is a good candidate for nanoscale mechanical applications.
Vapour growth of Cd(Zn)Te columnar nanopixels into porous alumina

International Nuclear Information System (INIS)

Sochinskii, N.V.; Abellan, M.; Martin Gonzalez, M.; Saucedo, E.; Dieguez, E.; Briones, F.

2006-01-01

The vapour phase growth (VPG) of CdTe and Cd 1- x Zn x Te was performed in order to investigate the formation of Cd(Zn)Te columnar nanostructures, which could serve as a basis for micropixels usable for further development of X- and gamma-ray high-resolution imaging devices. The possibility to form the 'Cd(Zn)Te-in-porous alumina' nanostructures by VPG has been demonstrated. The Cd(Zn)Te crystals integrated into nanoporous alumina have shown to have photoluminescence properties compatible with those of the bulk crystals and planar epitaxial layers. Further investigations are going on to improve the structural quality of Cd(Zn)Te nanocrystals
Modification of leaf morphology and anatomy as a consequence of columnar architecture in domestic apple (Malus x domestica Borkh.) trees

DEFF Research Database (Denmark)

Talwara, Susheela; Grout, Brian William Wilson; Toldam-Andersen, Torben Bo

2013-01-01

A quantitative study has been made of the modifications to leaf morphology and anatomy evident in columnar apples trees when compared to standard ones, using the original cultivar and the first columnar mutant derived from it, as well as other closely and more distantly related cultivars. Signifi......A quantitative study has been made of the modifications to leaf morphology and anatomy evident in columnar apples trees when compared to standard ones, using the original cultivar and the first columnar mutant derived from it, as well as other closely and more distantly related cultivars....... Significant increases in leaf number, area, weight per unit area, thickness and midrib angle, together with altered shape, have been recorded consistently for the leaves subtending the developing fruits of the columnar cultivars. Additionally, significant increases in leaf rolling, epicuticular wax, stomatal...... of leaf characteristics is considered in terms of the very open architectural phenotype of columnar trees and the impact this may have on the canopy microclimate that influences leaf development....
Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

International Nuclear Information System (INIS)

Andrikopoulos, K S; Yannopoulos, S N; Voyiatzis, G A; Kolobov, A V; Ribes, M; Tominaga, J

2006-01-01

We report on an inelastic (Raman) light scattering study of the local structure of amorphous GeTe (a-GeTe) films. A detailed analysis of the temperature-reduced Raman spectra has shown that appreciable structural changes occur as a function of temperature. These changes involve modifications of atomic arrangements such as to facilitate the rapid amorphous to crystal transformation, which is the major advantage of phase-change materials used in optical data storage media. A particular structural model, supported by polarization analysis, is proposed which is compatible with the experimental data as regards both the structure of a-GeTe and the crystallization transition. The remarkable difference between the Raman spectrum of the crystal and the glass can thus naturally be accounted for
Laser-induced luminescence of multilayer structures based on polyimides and CdSe and CdSe/ZnS nanocrystals

International Nuclear Information System (INIS)

Chistyakov, A A; Dayneko, S V; Zakharchenko, K V; Kolesnikov, V A; Tedoradze, M G; Mochalov, K E; Oleinikov, V A

2009-01-01

Laser-induced luminescence of multilayer structures based on the solids of CdSe and CdSe/ZnS nanocrystals, different organic semiconductors and on the layers of organic semiconductors with embedded nanocrystals has been investigated. Drastic decrease of luminescence quantum yield is observed in the films of CdSe nanocrystals on organic semiconductors compared to those on optical glasses. The luminescence of the nanocrystals in the matrices of organic semiconductors and in multilayer structures is shown to be suppressed. The effects observed are explained by the transfer of photogenerated carriers from the nanocrystals to the molecules of organic semiconductors. The presence of the charge transfer is confirmed by a drastic increase in the conductivity (by 2 – 4 orders of magnitude) and in photovoltaic effect at the presence of CdSe and CdSe/ZnS nanocrystals in the structures under investigation. The prospects of using the multilayer structures for development new materials for solar cells are discussed
Influence of chirality on the thermal and electric properties of the columnar mesophase exhibited by homomeric dipeptides

Science.gov (United States)

Parthasarathi, Srividhya; Shankar Rao, D. S.; Prabhu, Rashmi; Yelamaggad, C. V.; Krishna Prasad, S.

2017-10-01

We present the first investigation of the influence of chirality on the thermal and electric properties in a biologically important homomeric dipeptide that exhibits a hexagonal columnar liquid crystal mesophase. The peptide employed has two chiral centres, and thus the two possible enantiopures are the (R,R) and (S,S) forms having opposite chirality. The measurements reported the span of the binary phase space between these two enantiopures. Any point in the binary diagram is identified by the enantiomeric excess Xee (the excess content of the R,R enantiopure over its S,S counterpart). We observe that the magnitude of Xee plays a pivotal role in governing the properties as evidenced by X-ray diffraction (XRD), electric polarization (Ps), dielectric relaxation spectroscopy (DRS) measurements, and the isotropic-columnar transition temperature. For example, XRD shows that while other features pointing to a hexagonal columnar phase remain the same, additional short-range ordering, indicating correlated discs within the column, is present for the enantiopures (Xee = ±1) but not for the racemate (Xee = 0). Similarly, an electric-field driven switching whose profile suggests the phase structure to be antiferroelectric is seen over the entire binary space, but the magnitude is dependent on Xee; interestingly the polarization direction is axial, i.e., along the column axis. DRS studies display two dielectric modes over a limited temperature range and one mode (mode 2) connected with the antiferroelectric nature of the columnar structure covering the entire mesophase. The relaxation frequency and the thermal behaviour of mode 2 are strongly influenced by Xee. The most attractive effect of chirality is its influence on the polar order, a measure of which is the magnitude of the axial polarization. This result can be taken to be a direct evidence of the manifestation of molecular recognition and the delicate interplay between chiral perturbations and the magnitude of the
A combined neutron and x-ray diffraction study of short- and intermediate-range structural characteristics of Ge-As sulfide glasses

International Nuclear Information System (INIS)

Uzun, S Soyer; Sen, S; Benmore, C J; Aitken, B G

2008-01-01

A combination of neutron and x-ray diffraction has been employed to study the compositional dependence of the atomic structures of Ge x As x S 100-2x glasses with S concentration varying between 33.3 and 70.0 at.%. The nearest-neighbor coordination numbers of Ge and As atoms are always found to be 4 and 3, respectively, irrespective of the glass composition. Ge and As atoms have primarily heteropolar bonding to S atoms in stoichiometric and S-excess glasses with x≤18.2. Low and intermediate levels of deficiency of S (20≤x≤25) are accommodated via the formation of homopolar As-As bonds while Ge atoms remain primarily bonded to four S atoms, resulting in As-rich regions in the glass structure. Ge starts to participate in metal-metal bonding only in the highly S-deficient glasses with 27.5≤x≤33.3. The intermediate-range order and its topological influence on atomic packing in these three compositional regions, in the order of increasing deficiency in S, are controlled by (a) a mixed GeS 2 and As 2 S 3 network, (b) the coexistence of a GeS 2 network and As clusters, and (c) large Ge-As metal-rich regions. This evolution of the intermediate-range structure with composition is consistent with the corresponding variation of the position, intensity and width of the first sharp diffraction peak in the structure factor
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Science.gov (United States)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.
Deformation strain inhomogeneity in columnar grain nickel

DEFF Research Database (Denmark)

Wu, G.L.; Godfrey, A.; Juul Jensen, D.

2005-01-01

A method is presented for determination of the local deformation strain of individual grains in the bulk of a columnar grain sample. The method, based on measurement of the change in grain area of each grain, is applied to 12% cold rolled nickel. Large variations are observed in the local strain...... associated with each grain. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved....

Studies of Hadronic Event Structure in $e^+ e^-$ Annihilation from 30 GeV to 209 GeV with the L3 Detector

CERN Document Server

Achard, P.; Aguilar-Benitez, M.; Alcaraz, J.; Alemanni, G.; Allaby, J.; Aloisio, A.; Alviggi, M.G.; Anderhub, H.; Andreev, Valery P.; Anselmo, F.; Arefev, A.; Azemoon, T.; Aziz, T.; Bagnaia, P.; Bajo, A.; Baksay, G.; Baksay, L.; Baldew, S.V.; Banerjee, S.; Banerjee, Sw.; Barczyk, A.; Barillere, R.; Bartalini, P.; Basile, M.; Batalova, N.; Battiston, R.; Bay, A.; Becattini, F.; Becker, U.; Behner, F.; Bellucci, L.; Berbeco, R.; Berdugo, J.; Berges, P.; Bertucci, B.; Betev, B.L.; Biasini, M.; Biglietti, M.; Biland, A.; Blaising, J.J.; Blyth, S.C.; Bobbink, G.J.; Bohm, A.; Boldizsar, L.; Borgia, B.; Bottai, S.; Bourilkov, D.; Bourquin, M.; Braccini, S.; Branson, J.G.; Brochu, F.; Burger, J.D.; Burger, W.J.; Cai, X.D.; Capell, M.; Romeo, G.Cara; Carlino, G.; Cartacci, A.; Casaus, J.; Cavallari, F.; Cavallo, N.; Cecchi, C.; Cerrada, M.; Chamizo, M.; Chang, Y.H.; Chemarin, M.; Chen, A.; Chen, G.; Chen, G.M.; Chen, H.F.; Chen, H.S.; Chiefari, G.; Cifarelli, L.; Cindolo, F.; Clare, I.; Clare, R.; Coignet, G.; Colino, N.; Costantini, S.; de la Cruz, B.; Cucciarelli, S.; van Dalen, J.A.; de Asmundis, R.; Deglon, P.; Debreczeni, J.; Degre, A.; Dehmelt, K.; Deiters, K.; della Volpe, D.; Delmeire, E.; Denes, P.; DeNotaristefani, F.; De Salvo, A.; Diemoz, M.; Dierckxsens, M.; Dionisi, C.; Dittmar, M.; Doria, A.; Dova, M.T.; Duchesneau, D.; Duda, M.; Echenard, B.; Eline, A.; El Hage, A.; El Mamouni, H.; Engler, A.; Eppling, F.J.; Extermann, P.; Falagan, M.A.; Falciano, S.; Favara, A.; Fay, J.; Fedin, O.; Felcini, M.; Ferguson, T.; Fesefeldt, H.; Fiandrini, E.; Field, J.H.; Filthaut, F.; Fisher, P.H.; Fisher, W.; Fisk, I.; Forconi, G.; Freudenreich, K.; Furetta, C.; Galaktionov, Iouri; Ganguli, S.N.; Garcia-Abia, Pablo; Gataullin, M.; Gentile, S.; Giagu, S.; Gong, Z.F.; Grenier, Gerald Jean; Grimm, O.; Gruenewald, M.W.; Guida, M.; Gupta, V.K.; Gurtu, A.; Gutay, L.J.; Haas, D.; Hatzifotiadou, D.; Hebbeker, T.; Herve, Alain; Hirschfelder, J.; Hofer, H.; Hohlmann, M.; Holzner, G.; Hou, S.R.; Hu, Y.; Jin, B.N.; Jones, Lawrence W.; de Jong, P.; Josa-Mutuberria, I.; Kaur, M.; Kienzle-Focacci, M.N.; Kim, J.K.; Kirkby, Jasper; Kittel, W.; Klimentov, A.; Konig, A.C.; Kopal, M.; Koutsenko, V.; Kraber, M.; Kraemer, R.W.; Kruger, A.; Kunin, A.; Ladron de Guevara, P.; Laktineh, I.; Landi, G.; Lebeau, M.; Lebedev, A.; Lebrun, P.; Lecomte, P.; Lecoq, P.; Le Coultre, P.; Le Goff, J.M.; Leiste, R.; Levtchenko, M.; Levtchenko, P.; Li, C.; Likhoded, S.; Lin, C.H.; Lin, W.T.; Linde, F.L.; Lista, L.; Liu, Z.A.; Lohmann, W.; Longo, E.; Lu, Y.S.; Luci, C.; Luminari, L.; Lustermann, W.; Ma, W.G.; Malgeri, L.; Malinin, A.; Mana, C.; Mangeol, D.; Mans, J.; Martin, J.P.; Marzano, F.; Mazumdar, K.; McNeil, R.R.; Mele, S.; Merola, L.; Meschini, M.; Metzger, W.J.; Mihul, A.; Milcent, H.; Mirabelli, G.; Mnich, J.; Mohanty, G.B.; Muanza, G.S.; Muijs, A.J.M.; Musicar, B.; Musy, M.; Nagy, S.; Natale, S.; Napolitano, M.; Nessi-Tedaldi, F.; Newman, H.; Nisati, A.; Novak, T.; Kluge, Hannelies; Ofierzynski, R.; Organtini, G.; Pal, I.; Palomares, C.; Paolucci, P.; Paramatti, R.; Passaleva, G.; Patricelli, S.; Paul, Thomas Cantzon; Pauluzzi, M.; Paus, C.; Pauss, F.; Pedace, M.; Pensotti, S.; Perret-Gallix, D.; Petersen, B.; Piccolo, D.; Pierella, F.; Pioppi, M.; Piroue, P.A.; Pistolesi, E.; Plyaskin, V.; Pohl, M.; Pojidaev, V.; Pothier, J.; Prokofev, D.; Quartieri, J.; Rahal-Callot, G.; Rahaman, Mohammad Azizur; Raics, P.; Raja, N.; Ramelli, R.; Rancoita, P.G.; Ranieri, R.; Raspereza, A.; Razis, P.; Ren, D.; Rescigno, M.; Reucroft, S.; Riemann, S.; Riles, Keith; Roe, B.P.; Romero, L.; Rosca, A.; Rosemann, C.; Rosenbleck, C.; Rosier-Lees, S.; Roth, Stefan; Rubio, J.A.; Ruggiero, G.; Rykaczewski, H.; Sakharov, A.; Saremi, S.; Sarkar, S.; Salicio, J.; Sanchez, E.; Schafer, C.; Schegelsky, V.; Schopper, H.; Schotanus, D.J.; Sciacca, C.; Servoli, L.; Shevchenko, S.; Shivarov, N.; Shoutko, V.; Shumilov, E.; Shvorob, A.; Son, D.; Souga, C.; Spillantini, P.; Steuer, M.; Stickland, D.P.; Stoyanov, B.; Straessner, A.; Sudhakar, K.; Sultanov, G.; Sun, L.Z.; Sushkov, S.; Suter, H.; Swain, J.D.; Szillasi, Z.; Tang, X.W.; Tarjan, P.; Tauscher, L.; Taylor, L.; Tellili, B.; Teyssier, D.; Timmermans, Charles; Ting, Samuel C.C.; Ting, S.M.; Tonwar, S.C.; Toth, J.; Tully, C.; Tung, K.L.; Ulbricht, J.; Valente, E.; Van de Walle, R.T.; Vasquez, R.; Veszpremi, V.; Vesztergombi, G.; Vetlitsky, I.; Vicinanza, D.; Viertel, G.; Villa, S.; Vivargent, M.; Vlachos, S.; Vodopianov, I.; Vogel, H.; Vogt, H.; Vorobev, I.; Vorobyov, A.A.; Wadhwa, M.; Wang, Q.; Wang, X.L.; Wang, Z.M.; Weber, M.; Wilkens, H.; Wynhoff, S.; Xia, L.; Xu, Z.Z.; Yamamoto, J.; Yang, B.Z.; Yang, C.G.; Yang, H.J.; Yang, M.; Yeh, S.C.; Zalite, An.; Zalite, Yu.; Zhang, Z.P.; Zhao, J.; Zhu, G.Y.; Zhu, R.Y.; Zhuang, H.L.; Zichichi, A.; Zimmermann, B.; Zoller, M.

2004-01-01

In this Report, QCD results obtained from a study of hadronic event structure in high energy e^+e^- interactions with the L3 detector are presented. The operation of the LEP collider at many different collision energies from 91 GeV to 209 GeV offers a unique opportunity to test QCD by measuring the energy dependence of different observables. The main results concern the measurement of the strong coupling constant, \\alpha_s, from hadronic event shapes and the study of effects of soft gluon coherence through charged particle multiplicity and momentum distributions.
Structure and optical properties of GaSe-CdSe composites driven by Cd intercalation in GaSe lamellar crystals

International Nuclear Information System (INIS)

Caraman, Iuliana; Kantser, Valeriu; Evtodiev, Igor; Untila, Dumitru; Dmitroglo, Liliana; Leontie, Liviu; Arzumanyan, Grigory

2015-01-01

A new composite material composed of GaSe and CdSe has been obtained by treatment of GaSe single-crystal lamellas in Cd vapors at temperatures of 773-853 K and intercalation of Cd interlayers. The structure and optical properties of the GaSe-CdSe composite material have been studied. The content of CdSe crystallites was found to grow with increasing treatment temperature or with increasing duration of treatment at a constant temperature. Analysis of XRD, PL, XPS, AFM, and Raman patterns has shown that the heterogeneous composite composed of micro and nanocrystallites of CdSe in GaSe can be obtained by Cd intercalation in a temperature range of 753-853 K. On the basis of Raman spectrum, the vibrational modes of the composite have been identified. The PL of these materials contains emission bands of free and bound excitons, donor-acceptor bands, and bands of recombination via impurity levels. The PL emission spectra measured at a temperature of 78 and 300 K for the composites result from the overlapping of the emission bands of the components of GaSe doped with Cd and the CdSe crystallites. (authors)
Growth model and structure evolution of Ag layers deposited on Ge films.

Science.gov (United States)

Ciesielski, Arkadiusz; Skowronski, Lukasz; Górecka, Ewa; Kierdaszuk, Jakub; Szoplik, Tomasz

2018-01-01

We investigated the crystallinity and optical parameters of silver layers of 10-35 nm thickness as a function 2-10 nm thick Ge wetting films deposited on SiO 2 substrates. X-ray reflectometry (XRR) and X-ray diffraction (XRD) measurements proved that segregation of germanium into the surface of the silver film is a result of the gradient growth of silver crystals. The free energy of Ge atoms is reduced by their migration from boundaries of larger grains at the Ag/SiO 2 interface to boundaries of smaller grains near the Ag surface. Annealing at different temperatures and various durations allowed for a controlled distribution of crystal dimensions, thus influencing the segregation rate. Furthermore, using ellipsometric and optical transmission measurements we determined the time-dependent evolution of the film structure. If stored under ambient conditions for the first week after deposition, the changes in the transmission spectra are smaller than the measurement accuracy. Over the course of the following three weeks, the segregation-induced effects result in considerably modified transmission spectra. Two months after deposition, the slope of the silver layer density profile derived from the XRR spectra was found to be inverted due to the completed segregation process, and the optical transmission spectra increased uniformly due to the roughened surfaces, corrosion of silver and ongoing recrystallization. The Raman spectra of the Ge wetted Ag films were measured immediately after deposition and ten days later and demonstrated that the Ge atoms at the Ag grain boundaries form clusters of a few atoms where the Ge-Ge bonds are still present.
Ge/SiGe superlattices for nanostructured thermoelectric modules

International Nuclear Information System (INIS)

Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

2013-01-01

Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices
Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

International Nuclear Information System (INIS)

Zhang, R.; Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S.

2016-01-01

We have demonstrated a low temperature formation (300 °C) of higher-k HfO 2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO x interfacial layer. It is found that the cubic phase is dominant in the HfO 2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO 2 film on a 1-nm-thick GeO x form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO 2 can be induced by the formation of six-fold crystalline GeO x structures in the underlying GeO x interfacial layer
Structural and thermodynamic similarities of phases in the Li-Tt (Tt = Si, Ge) systems: redetermination of the lithium-rich side of the Li-Ge phase diagram and crystal structures of Li17Si4.0-xGex for x = 2.3, 3.1, 3.5, and 4 as well as Li4.1Ge.

Science.gov (United States)

Zeilinger, Michael; Fässler, Thomas F

2014-10-28

A reinvestigation of the lithium-rich section of the Li-Ge phase diagram reveals the existence of two new phases, Li17Ge4 and Li4.10Ge (Li16.38Ge4). Their structures are determined by X-ray diffraction experiments of large single crystals obtained from equilibrated melts with compositions Li95Ge5 and Li85Ge15. Excess melt is subsequently removed through isothermal centrifugation at 400 °C and 530 °C, respectively. Li17Ge4 crystallizes in the space group F4[combining macron]3m (a = 18.8521(3) Å, V = 6700.1(2) Å(3), Z = 20, T = 298 K) and Li4.10Ge (Li16.38Ge4) in Cmcm (a = 4.5511(2) Å, b = 22.0862(7) Å, c = 13.2751(4) Å, V = 1334.37(8) Å(3), Z = 16, T = 123 K). Both phases are isotypic with their Si counterparts and are further representative of the Li17Pb4 and Li4.11Si structure types. Additionally, the solid solutions Li17Si4-xGex follows Vegard's law. A comparison of the GeLin coordination polyhedra shows that isolated Ge atoms are 13- and 14-coordinated in Li17Ge4, whereas in Li16.38Ge4 the Ge atoms possess coordination numbers 12 and 13. Regarding the thermodynamic stability, Li16.38Ge4 is assigned a high-temperature phase existing between ∼400 °C and 627 °C, whereas Li17Ge4 decomposes peritectically at 520-522 °C. Additionally, the decomposition of Li16.38Ge4 below ∼400 °C was found to be very sluggish. These findings are manifested by differential scanning calorimetry, long-term annealing experiments and the results from melt equilibration experiments. Interestingly, the thermodynamic properties of the lithium-rich tetrelides Li17Tt4 and Li4.1Tt (Li16.4Tt4) are very similar (Tt = Si, Ge). Besides Li15Tt4, Li14Tt6, Li12Tt7, and LiTt, the title compounds are further examples of isotypic tetrelides in the systems Li-Tt.
Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

International Nuclear Information System (INIS)

Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

2014-01-01

Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.
Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C.

Science.gov (United States)

Storozhevykh, Mikhail S; Arapkina, Larisa V; Yuryev, Vladimir A

2015-12-01

The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown in a flux of Ge atoms arriving on its surface. We conclude that the growth of the pyramids appearing at temperatures greater than 600 °C is controlled by kinetics rather than thermodynamic equilibrium whereas the wetting layer is an equilibrium structure. Primary 68.37.Ef; 68.55.Ac; 68.65.Hb; 81.07.Ta; 81.16.Dn.
Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

International Nuclear Information System (INIS)

Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

2014-01-01

Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3
Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties.

Science.gov (United States)

Sims, Patrick E; Chizmeshya, Andrew V G; Jiang, Liying; Beeler, Richard T; Poweleit, Christian D; Gallagher, James; Smith, David J; Menéndez, José; Kouvetakis, John

2013-08-21

In this work, we extend our strategy previously developed to synthesize functional, crystalline Si(5-2y)(AlX)y {X = N,P,As} semiconductors to a new class of Ge-III-V hybrid compounds, leading to the creation of (InP)(y)Ge(5-2y) analogues. The compounds are grown directly on Ge-buffered Si(100) substrates using gas source MBE by tuning the interaction between Ge-based P(GeH3)3 precursors and In atoms to yield nanoscale "In-P-Ge3" building blocks, which then confer their molecular structure and composition to form the target solids via complete elimination of H2. The collateral production of reactive germylene (GeH2), via partial decomposition of P(GeH3)3, is achieved by simple adjustment of the deposition conditions, leading to controlled Ge enrichment of the solid product relative to the stoichiometric InPGe3 composition. High resolution XRD, XTEM, EDX, and RBS indicate that the resultant monocrystalline (InP)(y)Ge(5-2y) alloys with y = 0.3-0.7 are tetragonally strained and fully coherent with the substrate and possess a cubic diamond-like structure. Molecular and solid-state ab initio density functional theory (DFT) simulations support the viability of "In-P-Ge3" building-block assembly of the proposed crystal structures, which consist of a Ge parent crystal in which the P atoms form a third-nearest-neighbor sublattice and "In-P" dimers are oriented to exclude energetically unfavorable In-In bonding. The observed InP concentration dependence of the lattice constant is closely reproduced by DFT simulation of these model structures. Raman spectroscopy and ellipsometry are also consistent with the "In-P-Ge3" building-block interpretation of the crystal structure, while the observation of photoluminescence suggests that (InP)(y)Ge(5-2y) may have important optoelectronic applications.
Relaxation of mechanical stresses in Si-Ge/Si structures implanted by carbon ions. Study with optical methods

International Nuclear Information System (INIS)

Klyuj, M.Yi.

1998-01-01

Optical properties of Si-Ge/Si structures implanted by carbon ions with the energy of 20 keV and at the doses of 5 centre dot 10 15 - 1- 16 cm -2 are studied by spectro ellipsometry and Raman scattering techniques. From the comparison of experimental data with the results of theoretical calculations, it is shown that, as a result of implantation, a partial relaxation of mechanical stresses in the Si 1-x Ge x film due to introduction of carbon atoms with a small covalent radius into the Si-Ge lattice takes place. An elevated implantation temperature allows one to maintain a high structural perfection of the implanted film
Photophysical properties of columnar phases formed by triphenylene derivatives

International Nuclear Information System (INIS)

Sigal, Herve

1997-01-01

This research thesis reports the study of the spectroscopic properties and of the migration of excitation energy in the singlet state in columnar phases formed by alkyloxy and alkylthio derivatives of triphenylene. First, the author studied the spectroscopic properties of chromophores in solutions, and characterized excited states by using computation codes (CS-INDO-CIPSI). Then, by using the excitonic theory in the case of the considered triphenylene derivatives, the author studied the influence of molecular movements and of the intra-columnar order on the spectroscopic properties. In some circumstances, the non-radiative transfer of excitation energy is governed by a mechanism displaying a random evolution. This stochastic movement is studied by using Monte Carlo simulations. The author shows that the energy migration is one-dimensional on short times, and then becomes three-dimensional. The evolution of excitation energy in space and in time is determined [fr
One- and two-dimensional fluids properties of smectic, lamellar and columnar liquid crystals

CERN Document Server

Jakli, Antal

2006-01-01

Smectic and lamellar liquid crystals are three-dimensional layered structures in which each layer behaves as a two-dimensional fluid. Because of their reduced dimensionality they have unique physical properties and challenging theoretical descriptions, and are the subject of much current research. One- and Two-Dimensional Fluids: Properties of Smectic, Lamellar and Columnar Liquid Crystals offers a comprehensive review of these phases and their applications. The book details the basic structures and properties of one- and two-dimensional fluids and the nature of phase transitions. The later chapters consider the optical, magnetic, and electrical properties of special structures, including uniformly and non-uniformly aligned anisotropic films, lyotropic lamellar systems, helical and chiral structures, and organic anisotropic materials. Topics also include typical and defective features, magnetic susceptibility, and electrical conductivity. The book concludes with a review of current and potential applications ...
Ge 3P 6Si 2O 25: A cage structure closely related to the intersecting tunnel structure KMo 3P 6Si 2O 25

Science.gov (United States)

Leclaire, A.; Raveau, B.

1988-08-01

A germanosilicophosphate Ge 3P 6Si 2O 25 has been isolated. Its structure was solved from a single-crystal study in the space group P overline31c . Its cell parameters are a = b = 7.994(1) Å, c = 16.513(2) Å, Z = 2. The refinement by full-matrix least-squares calculations leads to R = 0.043 with 686 independent reflections. The structure of this oxide is built up from corner-sharing PO 4 and SiO 4 tetrahedra and GeO 6 octahedra. One observes a feature common to several silicophosphates: the presence of the structural unit P 6Si 2O 25 built up from a disilicate group sharing its corners with six PO 4 tetrahedra. The structural relationships between this oxide and the silicophosphates AMo 3P 6Si 2O 25 and Si 3P 6Si 2O 25 (or Ge 3P 6 Ge 2O 25) are described.
Effect of annealing temperature on the stress and structural properties of Ge core fibre

Science.gov (United States)

Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

2017-09-01

Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.
Structure-composition sensitivity in 'Metallic' Zintl phases: A study of Eu(Ga1-xTtx)2 (Tt=Si, Ge, 0≤x≤1)

International Nuclear Information System (INIS)

You, Tae-Soo; Zhao Jingtai; Poettgen, Rainer; Schnelle, Walter; Burkhardt, Ulrich; Grin, Yuri; Miller, Gordon J.

2009-01-01

Two isoelectronic series, Eu(Ga 1-x Tt x ) 2 (Tt=Si, Ge, 0≤x≤1), have been synthesized and characterized by powder and single-crystal X-ray diffraction, physical property measurements, and electronic structure calculations. In Eu(Ga 1-x Si x ) 2 , crystal structures vary from the KHg 2 -type to the AlB 2 -type, and, finally, the ThSi 2 -type structure as x increases. The hexagonal AlB 2 -type structure is identified for compositions 0.18(2)≤x 3 nets. As smaller Si atoms replace Ga atoms while the number of valence electrons increases, the lattice parameters, unit cell volumes, and Ga-Si distances in this phase region decrease significantly. Although aspects of X-ray diffraction results suggest puckering of the 6 3 nets for the Si-richest example of the AlB 2 -type Eu(Ga 1-x Si x ) 2 , the complete experimental evidence remains inconclusive. On the other hand, in Eu(Ga 1-x Ge x ) 2 , six different structural types were observed as x varies. In addition to EuGa 2 (KHg 2 -type; space group Imma) and EuGe 2 (own structure type, space group P3-barm1), the ternary phases studied show four different structures: the AlB 2 -type for Ga-rich compositions; the YPtAs-type structure for EuGaGe; and two new structures, which are intergrowths of the YPtAs-type EuGaGe and EuGe 2 , for Ge-rich compositions. These two Ge-rich phases include: (1) Eu(Ga 0.45(2) Ge 0.55(2) ) 2 containing two YPtAs-type motifs of EuGaGe plus one EuGe 2 motif; and (2) Eu(Ga 0.40(2) Ge 0.60(2) ) 2 containing one YPtAs-type motif alternating with a split site at x=2/3 ,y=1/3 and z=0.4798(2) with ca. 50% site occupancy by Ga and Ge along the c-axis. Magnetic susceptibilities of three Eu(Ga 1-x Ge x ) 2 compounds display Curie-Weiss behavior above ca. 100 K, and show effective magnetic moments indicative of divalent Eu with a 4f 7 electronic configuration, consistent with. X-ray absorption spectra (XAS). Density of states (DOS) and crystal orbital Hamilton population (COHP) analyses, based on first
The study of composition changes in thin film coatings of Ge-As-Se type under relativistic electron irradiation by means of electron Auger spectroscopy

International Nuclear Information System (INIS)

Kesler, L.G.; Dovgoshej, N.I.; Savchenko, N.D.

1991-01-01

Data on the influence of relativistic electrons on depth profile of Ge 33 As 12 Se 55 films were obtained for the first time. It was established that the most sufficient change of element composition of films in result of electron irradiation took place in the surface layer and on film-sublayer interface. It can be explained by increase of diffusion of impurities and free atoms
Ba/sub 2/Ge/sub 2/Te/sub 5/, a new telluridogermanate(III) with chain structure

Energy Technology Data Exchange (ETDEWEB)

Brinkmann, C; Eisenmann, B; Schaefer, H [Technische Hochschule Darmstadt (Germany, F.R.). Fachbereich Anorganische Chemie und Kernchemie

1984-10-01

The new compound Ba/sub 2/Ge/sub 2/Te/sub 5/ crystallizes in the orthorhombic system (space group: Pna2/sub 1/ (No. 33)). The lattice constants are given. In the structure distorted Ge/sub 2/Te/sub 6/-trigonal prisms are connected by common corners to infinite chains.
Structure and physical properties of Cr_5B_3-type Ta_5Si_3 and Ta_5Ge_3

International Nuclear Information System (INIS)

Yuan, Fang; Forbes, Scott; Ramachandran, Krishna Kumar; Mozharivskyj, Yurij

2015-01-01

The Cr_5B_3-type Ta_5Si_3 phase was prepared by arc-melting, while the Cr_5B_3-type Ta_5Ge_3 one was synthesized through sintering at 1000 °C. X-ray single crystal diffraction was employed to elucidate their structure. According to the magnetization measurements, both Ta_5Si_3 and Ta_5Ge_3 are Pauli paramagnets, with Ta_5Ge_3 showing a Curie-Weiss-like paramagnetic behavior at low temperatures likely due to presence of paramagnetic impurity. Both Ta_5Si_3 and Ta_5Ge_3 display a very low electrical resistivity from 2 to 300 K. The resistivity is constant below 20 K, but displays a positive temperature coefficient above 20 K. Electronic structure calculations with the TB-LMTO-ASA method support the metallic character of the two phases and suggest that the bonding is optimized in both phases. - Highlights: • Synthesis of Cr_5B_3-type Ta_5Si_3 and Ta_5Ge_3 phases with high purity by arc-melting and sintering, respectively. • Magnetization data and electrical resistivity of the Cr_5B_3-type Ta_5Si_3 and Ta_5Ge_3 phases. • Crystal and electronic structure analysis for Ta_5Si_3 and Ta_5Ge_3 phase by X-ray diffraction and TB-LMTO-ASA calculations.
Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

International Nuclear Information System (INIS)

Kutsenok, N.L.; Yanson, T.I.

1987-01-01

X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

Evaluation of potassium permanganate against an experimental subacute infection of Flavobacterium columnare in channel catfish, Icatlurus punctatus

Science.gov (United States)

The efficacy of potassium permanganate (KMnO4) as a prophylactic and therapeutic treatment for subacute infection of Flavobacterium columnare was demonstrated in experimentally infected channel catfish, Ictalurus punctatus. Catfish experimentally infected with F. columnare to mimic a subacute infec...
Analysis of EDZ Development of Columnar Jointed Rock Mass in the Baihetan Diversion Tunnel

Science.gov (United States)

Hao, Xian-Jie; Feng, Xia-Ting; Yang, Cheng-Xiang; Jiang, Quan; Li, Shao-Jun

2016-04-01

Due to the time dependency of the crack propagation, columnar jointed rock masses exhibit marked time-dependent behaviour. In this study, in situ measurements, scanning electron microscope (SEM), back-analysis method and numerical simulations are presented to study the time-dependent development of the excavation damaged zone (EDZ) around underground diversion tunnels in a columnar jointed rock mass. Through in situ measurements of crack propagation and EDZ development, their extent is seen to have increased over time, despite the fact that the advancing face has passed. Similar to creep behaviour, the time-dependent EDZ development curve also consists of three stages: a deceleration stage, a stabilization stage, and an acceleration stage. A corresponding constitutive model of columnar jointed rock mass considering time-dependent behaviour is proposed. The time-dependent degradation coefficient of the roughness coefficient and residual friction angle in the Barton-Bandis strength criterion are taken into account. An intelligent back-analysis method is adopted to obtain the unknown time-dependent degradation coefficients for the proposed constitutive model. The numerical modelling results are in good agreement with the measured EDZ. Not only that, the failure pattern simulated by this time-dependent constitutive model is consistent with that observed in the scanning electron microscope (SEM) and in situ observation, indicating that this model could accurately simulate the failure pattern and time-dependent EDZ development of columnar joints. Moreover, the effects of the support system provided and the in situ stress on the time-dependent coefficients are studied. Finally, the long-term stability analysis of diversion tunnels excavated in columnar jointed rock masses is performed.
Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

Science.gov (United States)

Munde, M S; Mehonic, A; Ng, W H; Buckwell, M; Montesi, L; Bosman, M; Shluger, A L; Kenyon, A J

2017-08-24

We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.
Structure and Stability of GeAun, n = 1-10 clusters: A Density Functional Study

International Nuclear Information System (INIS)

Priyanka,; Dharamvir, Keya; Sharma, Hitesh

2011-01-01

The structures of Germanium doped gold clusters GeAu n (n = 1-10) have been investigated using ab initio calculations based on density functional theory (DFT). We have obtained ground state geometries of GeAu n clusters and have it compared with Silicon doped gold clusters and pure gold clusters. The ground state geometries of the GeAu n clusters show patterns similar to silicon doped gold clusters except for n = 5, 6 and 9. The introduction of germanium atom increases the binding energy of gold clusters. The binding energy per atom of germanium doped cluster is smaller than the corresponding silicon doped gold cluster. The HUMO-LOMO gap for Au n Ge clusters have been found to vary between 0.46 eV-2.09 eV. The mullikan charge analysis indicates that charge of order of 0.1e always transfers from germanium atom to gold atom.
Dimorphism in La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}? How exploratory syntheses led to surprising new finds in the La-Ge and Ce-Ge binary phase diagrams

Energy Technology Data Exchange (ETDEWEB)

Suen, Nian-Tzu; Bobev, Svilen [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

2014-04-15

Reported are the synthesis, the crystal structures, and the electronic structures of two new tetragonal phases, La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}. Both title compounds crystallize in the Pu{sub 5}Rh{sub 3} (P4/ncc) structure type, which has close structural relationship with the W{sub 5}Si{sub 3} (I4/mcm) structure type. The synthetic results, supported by thermal analysis suggest that this tetragonal phase is only stable at relatively low temperature and it transforms to the hexagonal form (Mn{sub 5}Si{sub 3} structure type, P6{sub 3}/mcm) at above 850 C. The structural relationship between La{sub 5}Ge{sub 3} (Pu{sub 5}Rh{sub 3} type) and La{sub 5}Sn{sub 3} (W{sub 5}Si{sub 3} type) is discussed as well. Temperature dependent DC magnetization and resistivity measurements indicate that the tetragonal phase La{sub 5}Ge{sub 3} exhibits Pauli-like paramagnetism and is a good metallic conductor. For the tetragonal phase Ce{sub 5}Ge{sub 3}, the magnetic behavior obeys the Curie-Weiss law in the high-temperature regime, while it deviates from the Curie-Weiss law at low temperature. No long-range magnetic ordering was observed down to 5 K, although short-range correlations can be inferred below ca. 50 K. The resistivity measurements of Ce{sub 5}Ge{sub 3} also show metallic-like temperature dependence, although the low-temperature behavior resembling a T{sup 2} law could signify anomalous electron-scattering (e.g., Kondo-like effect). The electronic structures of multiple phases with the same nominal compositions, computed by the TB-LMTO-ASA method, are compared and discussed. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Structural and optical properties of glancing angle deposited In{sub 2}O{sub 3} columnar arrays and Si/In{sub 2}O{sub 3} photodetector

Energy Technology Data Exchange (ETDEWEB)

Mondal, A.; Shougaijam, B.; Goswami, T.; Dhar, J.C.; Singh, N.K. [National Institute of Technology, Department of Electronics and Communication Engineering, Agartala (India); Choudhury, S. [North Eastern Hill University, Department of Electronics and Communication Engineering, Shillong (India); Chattopadhay, K.K. [Jadavpur University, Department of Physics, Kolkata (India)

2014-04-15

Ordered and perpendicular columnar arrays of In{sub 2}O{sub 3} were synthesized on conducting ITO electrode by a simple glancing angle deposition (GLAD) technique. The as-deposited In{sub 2}O{sub 3} columns were investigated by field emission gun-scanning electron microscope (FEG-SEM). The average length and diameter of the columns were estimated ∝400 nm and ∝100 nm, respectively. The morphology of the structure was examined by transmission electron microscopy (TEM). X-ray diffraction (XRD) analysis shows the polycrystalline nature of the sample which was verified by selective area electron diffraction (SAED) analysis. The growth mechanism and optical properties of the columns were also discussed. Optical absorption shows that In{sub 2}O{sub 3} columns have a high band to band transition at ∝3.75 eV. The ultraviolet and green emissions were obtained from the In{sub 2}O{sub 3} columnar arrays. The P-N junction was formed between In{sub 2}O{sub 3} and P-type Si substrate. The GLAD synthesized In{sub 2}O{sub 3} film exhibits low current conduction compared to In{sub 2}O{sub 3} TF. However, the Si/GLAD-In{sub 2}O{sub 3} detector shows ∝1.5 times enhanced photoresponsivity than that of Si/In{sub 2}O{sub 3} TF. (orig.)
Atomic structure of a stable high-index Ge surface: G2(103)-(4x1)

DEFF Research Database (Denmark)

Seehofer, L.; Bunk, O.; Falkenberg, G.

1997-01-01

Based on scanning tunneling microscopy and surface X-ray diffraction, we propose a complex structural model for the Ge(103)-(4 x 1) reconstruction. Each unit cell contains two (103) double steps, which gives rise to the formation of stripes of Ge atoms oriented in the [] direction....... The stripes and the spaces between them are covered with threefold-coordinated Ge adatoms. Charge is transferred from the bulk-like edge atoms of the double steps to the adatoms. The formation of the reconstruction can be explained in terms of stress relief, charge transfer, and minimization of the dangling...
Columnar transmitter based wireless power delivery system for implantable device in freely moving animals.

Science.gov (United States)

Eom, Kyungsik; Jeong, Joonsoo; Lee, Tae Hyung; Lee, Sung Eun; Jun, Sang Bum; Kim, Sung June

2013-01-01

A wireless power delivery system is developed to deliver electrical power to the neuroprosthetic devices that are implanted into animals freely moving inside the cage. The wireless powering cage is designed for long-term animal experiments without cumbersome wires for power supply or the replacement of batteries. In the present study, we propose a novel wireless power transmission system using resonator-based inductive links to increase power efficiency and to minimize the efficiency variations. A columnar transmitter coil is proposed to provide lateral uniformity of power efficiency. Using this columnar transmitter coil, only 7.2% efficiency fluctuation occurs from the maximum transmission efficiency of 25.9%. A flexible polymer-based planar type receiver coil is fabricated and assembled with a neural stimulator and an electrode. Using the designed columnar transmitter coil, the implantable device successfully operates while it moves freely inside the cage.
Composition of Extracellular Polymeric Substances (EPS) produced by Flavobacterium columnare isolated from tropical fish in Brazil.

Science.gov (United States)

de Alexandre Sebastião, Fernanda; Pilarski, Fabiana; Lemos, Manoel Victor Franco

2013-01-01

Thirty nine isolates of Flavobacterium columnare from Brazilian fish farms had their carbohydrate composition of EPS evaluated by high efficiency liquid chromatography, using the phenol-sulfuric acid method of EPS. The occurrence of capsules on F. columnare cells was not directly related to biofilm formation, and the predominant monosaccharide is glucose.
Alignment control of columnar liquid crystals with wavelength tunable CO2 laser irradiation

International Nuclear Information System (INIS)

Monobe, Hirosato; Awazu, Kunio; Shimizu, Yo

2008-01-01

Infrared-induced alignment change with wavelength tunable CO 2 laser irradiation for columnar liquid crystal domains was investigated for a liquid crystalline triphenylene derivative. A uniformly aligned alignment change of domains was observed when a chopped linearly polarized infrared laser light corresponding to the wavelength of the aromatic C-O-C stretching vibration band (9.65 μm) was irradiated. The results strongly imply that the infrared irradiation is a possible technique for device fabrication by use of columnar mesophase as a liquid crystalline semiconductor
Structure and superconducting properties of Nb3Ge prepared in a UHV system

International Nuclear Information System (INIS)

Habermeier, H.U.; Stuttgart Univ.

1981-01-01

Nb 3 Ge films are prepared by coevaporation of Nb and Ge under well defined and controlled conditions. The formation of the A15 Nb 3 Ge phase is studied by varying the processing parameters - composition, deposition temperature, and impurity gas background - systematically. Single phase samples with Tsub(c) onsets as high as 21.5 K and lattice parameters of 0.5148 nm only be obtained in an environment with no added impurities and a Ge concentration of 23.8 at%. Oxygen as impurity gas enhances Tsub(c) slightly in samples of the optimal composition, whereas hydrogen as impurity gas does not affect the formation and the Tsub(c) of the A15 phase at all. The structure, (lattice parameters, grain sizes, and phases present) and the superconducting properties (Tsub(c), Hsub(c2)(0)) of the samples show a systematic correlation of the preparation parameters and the physical properties. The experimental results are explained qualitatively within the frame of the linear chain model of A15 superconductors combined with the introduction of anti-site defects. (author)
Voltage tunable two-band MIR detection based on Si/SiGe quantum cascade injector structures

International Nuclear Information System (INIS)

Grydlik, M.; Rauter, P.; Meduna, M.; Fromherz, T.; Bauer, G.; Falub, C.; Dehlinger, G.; Sigg, H.; Gruetzmacher, D.

2004-01-01

We report the results of photocurrent spectroscopy in the mid-infrared (MIR) spectral region performed on p-type Si/SiGe cascade structures. The samples were grown by MBE and consist of a series of five SiGe quantum wells with ground states that can be coupled through thin Si barriers by aligning them in energy with an externally applied electric field E bi . Quantum wells and barriers are Boron doped to a level of 2.5 10 17 cm -3 . Our samples contain 10 sequences of the 5 quantum wells separated by 500 nm thick, undoped Si barriers. Vertical photocurrent spectroscopy has been performed for various electric fields applied perpendicular to the quantum wells at temperatures between 10 K and 100 K. Depending on the direction of the externally applied electric field relative to E bi , the photoresponse of our samples can be switched between two MIR detection bands with maxima at 230 meV and 400 meV. Due to the inversion asymmetry of the samples, at 0 V external voltage the samples deliver a short circuit current in the high-energy spectral band. Since the quantum cascades are formed in the valence band of the Si/SiGe structures, the quantum well transitions responsible for the observed photocurrents are allowed for radiation polarized parallel to the quantum wells. Therefore, these structures appear to be suitable for voltage tuneable MIR detection under normal incident radiation. By comparing the experimental results to model calculations, design strategies to optimize the responsivity of the Si/SiGe cascade structures are discussed. (author)
Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

International Nuclear Information System (INIS)

Frigeri, C.; Nasi, L.; Serenyi, M.; Khanh, N.Q.; Csik, A.; Szekrenyes, Zs.; Kamaras, K.

2012-01-01

Complete text of publication follows. Among the present available renewable energy sources, energy harvesting from sunlight by means of photovoltaic cells is the most attractive one. In order to win over the traditional energy resources both efficiency and cost effectiveness of photovoltaic conversion must be optimized as far as possible. Efficiency is basically improved by the use of multijunction cells containing semiconductors with different band-gap. In this respect, the III-V compounds guarantee the highest efficiency, up to 41.6 %, but they are quite expensive. The latter drawback also affects other compounds like CdTe and CuIn 1-x Ga x Se 2 (CIGS). Si based solar devices have lower efficiency but are much more cost effective. They can use either crystalline or amorphous Si thin layers or Si nanoparticles. As to the thin films, amorphous Si (a-Si) is preferred to crystalline Si as it has a wider band-gap (1.7 instead of 1.1 eV) thus harvesting a larger portion of solar energy. A tandem cell is formed by using a-SiGe which has a smaller band-gap tunable between 1.1 and 1.7 eV depending on the Ge content. The best value should be 1.4 eV since the material properties seem to degrade below this value whilst the photo-conductivity drops after light soaking if the band gap exceeds 1.4 eV. A key issue of amorphous Si, Ge and SiGe is the high density of defects in the band-gap mostly due to dangling bonds whose density is particularly high (even up to 5 x10 19 cm -3 ) since the lattice is significantly disordered with distorted bond angles and lengths. This increases the probability of rupture of the Si-Si (Ge-Ge) bonds, i.e., formation of dangling bonds. Owing to the fact that hydrogen with its single electron structure can close the dangling bonds, their density can be reduced even by 4 orders of magnitude by doping with hydrogen. However, H is unstable in the host lattice. In fact, several findings showed its evolution from the thin layer upon annealing and that
Structural studies of gels and gel-glasses in the SiO2-GeO2 system using vibrational spectroscopy

Science.gov (United States)

Mukherjee, Shyama P.; Sharma, Shiv K.

1986-01-01

GeO2 gel and gels in the SiO2-GeO2 system synthesized by the hydrolytic polycondensation of metal alkoxides have been studied by infrared and Raman spectroscopic techniques. The molecular structures, hydroxyl contents, and crystallinity of gels and gel-glasses in relation to the thermal history and GeO2 concentration were investigated. The binary compositions having up to 70 mol percent GeO2 were examined.
Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Hung-Pin Hsu

2013-01-01

Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.
Crystal structure of NaPr(SeO4)2

International Nuclear Information System (INIS)

Ovanisyan, S.M.; Iskhakova, L.D.

1989-01-01

NaPr(SeO 4 ) 2 structure is decoded (autodiffractometer CAD-4). Triclinic cell parameters are as follows: a=6.639(2), b=7.118(1), c=7.36(1) A, α=99.16(2) deg, β=96.93(2) deg, γ=89.77 (3) deg, p.gr. P1-bar, Z=2. Structure is of carcass type, built on CaSO 4 anhydride structure base with 2Ca→TR 3+ +Na + -type ordered substitution. Structural comparative crystallochemical analysis of anhydride and NaPr(SeO 4 ) 2 and NaNd(SO 4 ) 2 isostructural double salts is carried out
Hjemløse borgeres sygdom og brug af sundhedsydelser

DEFF Research Database (Denmark)

Benjaminsen, Lars; Birkelund, Jesper Fels; Enemark, Morten Holm

sygdom er meget udbredt blandt hjemløse borgere. Men også når man korrigerer for misbrug og psykisk sygdom, har de hjemløse borgere forøget risiko for en række sygdomme som fx infektionssygdomme, lungebetændelse og KOL. Undersøgelsen identificerer også et merforbrug af sundhedsydelser blandt de hjemløse...... tandlæge og speciallæge. Den stærke oversygelighed i gruppen af hjemløse borgere peger generelt på et behov for at medtænke en sundhedsmæssig dimension i den sociale støtte til disse borgere. Undersøgelsen er finansieret af Helsefonden....
A Moessbauer study of the germanium two-electron donor centers in PbSe

International Nuclear Information System (INIS)

Terukov, E.I.; Khuzhakulov, Eh.S.

2005-01-01

The 73 As( 73 Ge) Moessbauer emission spectroscopy is used for identification of neutral and ionized two-electron germanium centers in PbSe. It is shown that the charge state of antistructural defect 73 Ge, generating in the anion sublattice after 73 As radioactive decay, does not depend on the Fermi level position. In contrast to this, the 73 Ge center in the cation PbSe sublattice represents the electrically active substitution impurity. The emission spectra correspond to the neutral state of the ( 73 Ge 2+ ) donor center in n-type conductors and to the double ionized state of this ( 73 Ge 4+ ) center in p-type conductors [ru
Study of the structure of hadronic events and determination of $\\alpha_{s}$ at $\\sqrt{s}$ = 130 GeV and 136 GeV

CERN Document Server

Acciarri, M; Adriani, O; Aguilar-Benítez, M; Ahlen, S P; Alpat, B; Alcaraz, J; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Antreasyan, D; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Ball, R C; Banerjee, S; Banicz, K; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bencze, G L; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Borgia, B; Boucham, A; Bourilkov, D; Bourquin, Maurice; Boutigny, D; Brambilla, Elena; Branson, J G; Brigljevic, V; Brock, I C; Buijs, A; Bujak, A T; Burger, J D; Burger, W J; Burgos, C; Busenitz, J K; Buytenhuijs, A O; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Caria, M; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Castello, R; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chan, A; Chang, Y H; Chaturvedi, U K; Chemarin, M; Chen, A; Chen, C; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chéreau, X J; Chiefari, G; Chien, C Y; Choi, M T; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Coan, T E; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Commichau, V; Costantini, S; Cotorobai, F; de la Cruz, B; Dai, T S; D'Alessandro, R; De Asmundis, R; De Boeck, H; Degré, A; Deiters, K; Dénes, E; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dorne, I; Dova, M T; Drago, E; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabbretti, R; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Felcini, Marta; Ferguson, T; Fernández, D; Fernández, G; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Forconi, G; Fredj, L; Freudenreich, Klaus; Gailloud, M; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gau, S S; Gentile, S; Gerald, J; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; González, E; Gougas, Andreas; Goujon, D; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gustafson, H R; Gutay, L J; Hangarter, K; Hartmann, B; Hasan, A; He, J T; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hoorani, H; Hou, S R; Hu, G; Ilyas, M M; Innocente, Vincenzo; Janssen, H; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamyshkov, Yu A; Kapinos, P; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kittel, E W; Klimentov, A; Koffeman, E; Köngeter, A; Koutsenko, V F; Koulbardis, A; Krämer, R W; Kramer, T; Krenz, W; Kuijten, H; Kunin, A; Ladrón de Guevara, P; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Lee Jae Sik; Lee, K Y; Leggett, C; Le Goff, J M; Leiste, R; Lenti, M; Leonardi, E; Levchenko, P M; Li Chuan; Lieb, E H; Lin, W T; Linde, Frank L; Lindemann, B; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Ludovici, L; Luminari, L; Lustermann, W; Ma Wen Gan; Macchiolo, A; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangla, S; Maolinbay, M; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; Mazumdar, K; McNally, D; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Möller, M; Monteleoni, B; Moore, R; Morganti, S; Mount, R; Müller, S; Muheim, F; Nagy, E; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nippe, A; Nowak, H; Organtini, G; Ostonen, R; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Raghavan, R; Rahal-Callot, G; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Redaelli, M; Ren, D; Rescigno, M; Reucroft, S; Ricker, A; Riemann, S; Riemers, B C; Riles, K; Rind, O; Ro, S; Robohm, A; Rodin, J; Rodríguez-Calonge, F J; Roe, B P; Röhner, S; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Rykaczewski, H; Salicio, J; Salicio, J M; Sánchez, E; Santocchia, A; Sarakinos, M E; Sarkar, S; Sassowsky, M; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Schneegans, M; Schöneich, B; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schulte, R; Schultze, K; Schwenke, J; Schwering, G; Sciacca, C; Seiler, P G; Sens, Johannes C; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Siedenburg, T; Son, D; Sopczak, André; Soulimov, V; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Sticozzi, F; Stone, H; Stoyanov, B; Strässner, A; Strauch, K; Sudhakar, K; Sultanov, G G; Sun, L Z; Susinno, G F; Suter, H; Swain, J D; Tang, X W; Tauscher, Ludwig; Taylor, L; Ting, Samuel C C; Ting, S M; Toker, O; Tonisch, F; Tonutti, M; Tonwar, S C; Tóth, J; Tsaregorodtsev, A Yu; Tully, C; Tuchscherer, H; Tung, K L; Ulbricht, J; Urbàn, L; Uwer, U; Valente, E; Van de Walle, R T; Vetlitskii, I; Viertel, Gert M; Vivargent, M; Völkert, R; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vuilleumier, L; Wadhwa, M; Wallraff, W; Wang, J C; Wang, X L; Wang, Y F; Wang, Z M; Weber, A; Weill, R; Willmott, C; Wittgenstein, F; Wu, S X; Wynhoff, S; Xu, J; Xu, Z Z; Yang, B Z; Yang, C G; Yao, X Y; Ye, J B; Yeh, S C; You, J M; Zaccardelli, C; Zalite, A; Zemp, P; Zeng, J Y; Zeng, Y; Zhang, Z; Zhang, Z P; Zhou, B; Zhou, G J; Zhou, Y; Zhu, G Y; Zhu, R Y; Zichichi, Antonino; Van der Zwaan, B C C

1996-01-01

We present a study of the structure of hadronic events recorded by the L3 detector at center-of-mass energies of 130 and 136 GeV. The data sample corresponds to an integrated luminosity of 5 pb-1 collected during the high energy run of 1995. The shapes of the event shape distributions and the energy dependence of their mean values are well reproduced by QCD models. From a comparison of the data with resummed O(alpha_s^2) QCD calculations, we determine the strong coupling constant to be alpha_s(133 GeV) = 0.107 +/- 0.005(exp) +/- 0.006(theor).
DFT investigation on two-dimensional GeS/WS2 van der Waals heterostructure for direct Z-scheme photocatalytic overall water splitting

Science.gov (United States)

Ju, Lin; Dai, Ying; Wei, Wei; Li, Mengmeng; Huang, Baibiao

2018-03-01

Recently, extensive attention has been paid to the direct Z-scheme systems for photocatalytic water splitting where carriers migrate directly between the two semiconductors without a redox mediator. In the present work, the electronic structure and related properties of two-dimensional (2D) van de Waals (vdW) GeS/WX2 (X = O, S, Se, Te) heterojunction are systematically investigated by first-principles calculations. Our results demonstrate that, the GeS/WS2 heterojunction could form a direct Z-scheme system for photocatalytic water splitting, whereas the GeS/WX2 (X = O, Se, Te) can't, because of their respective unsuitable electronic structures. For the GeS/WS2 heterojunction, the GeS and WS2 monolayers serve as photocatalysts for the hydrogen evolution reactionand oxygen evolution reaction, respectively. The internal electric field induced by the electron transfer at the interface can promote the separation of photo-generated charge carriers and formation of the interface Z-scheme electron transfer. Remarkably, the designed GeS/WS2 heterojunction not only enhances the hydrogen production activity of GeS and the oxygen production ability of WS2 but also improves the light absorption of the two monolayers by reducing the band gaps. Moreover, it is found that narrowing the interlayer distance could enhance the internal electric field, improving the photocatalytic ability of the vdW heterojunction. This work provides fundamental insights for further design and preparation of emergent metal dichalcogenide catalysts, beneficial for the development in clean energy.

First principles study of structural, electronic and magnetic properties of SnGe n (0, ±1) ( n = 1–17) clusters

Science.gov (United States)

Djaadi, Soumaia; Eddine Aiadi, Kamal; Mahtout, Sofiane

2018-04-01

The structures, relative stability and magnetic properties of pure Ge n +1, neutral cationic and anionic SnGe n (n = 1–17) clusters have been investigated by using the first principles density functional theory implemented in SIESTA packages. We find that with the increasing of cluster size, the Ge n +1 and SnGe n (0, ±1) clusters tend to adopt compact structures. It has been also found that the Sn atom occupied a peripheral position for SnGe n clusters when n 12. The structural and electronic properties such as optimized geometries, fragmentation energy, binding energy per atom, HOMO–LUMO gaps and second-order differences in energy of the pure Ge n +1 and SnGe n clusters in their ground state are calculated and analyzed. All isomers of neutral SnGe n clusters are generally nonmagnetic except for n = 1 and 4, where the total spin magnetic moments is 2μ b. The total (DOS) and partial density of states of these clusters have been calculated to understand the origin of peculiar magnetic properties. The cluster size dependence of vertical ionization potentials, vertical electronic affinities, chemical hardness, adiabatic electron affinities and adiabatic ionization potentials have been calculated and discussed.
Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy

International Nuclear Information System (INIS)

Gouder, S.; Mahamdi, R.; Aouassa, M.; Escoubas, S.; Favre, L.; Ronda, A.; Berbezier, I.

2014-01-01

Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited by molecular beam epitaxy (MBE) on PS substrate. During deposition, the pore network of PS layers has been filled with Ge. We investigate the structure and morphology of PS as fabricated and after annealing at various temperatures. We show that the PS crystalline lattice is distorted and expanded in the direction perpendicular to the substrate plane due to the presence of chemisorbed –OH. An annealing at high temperature (> 500 °C), greatly changes the PS morphology and structure. This change is marked by an increase of the pore diameter while the lattice parameter becomes tensily strained in the plane (compressed in the direction perpendicular). The morphology and structure of Ge layers are investigated by transmission electron microscopy, high resolution X-ray diffraction and atomic force microscopy as a function of the deposition temperature and deposited thickness. The results show that the surface roughness, level of relaxation and Si-Ge intermixing (Ge content) depend on the growth temperature and deposited thickness. Two sub-layers are distinguished: the layer incorporated inside the PS pores (high level of intermixing) and the layer on top of the PS surface (low level of intermixing). When deposited at temperature > 500 °C, the Ge layers are fully relaxed with a top Si 1−x Ge x layer x = 0.74 and a very flat surface. Such layer can serve as fully relaxed ultra-thin SiGe pseudo-substrate with high Ge content. The epitaxy of Ge on sacrificial soft PS pseudo-substrate in the experimental conditions described here provides an easy way to fabricate fully relaxed SiGe pseudo-substrates. Moreover, Ge thin films epitaxially deposited by MBE on PS could be used as relaxed pseudo-substrate in conventional microelectronic technology. - Highlights: • We have developed a rapid and low
Revision of the Ge–Ti phase diagram and structural stability of the new phase Ge4Ti5

International Nuclear Information System (INIS)

Bittner, Roland W.; Colinet, Catherine; Tedenac, Jean-Claude; Richter, Klaus W.

2013-01-01

Highlights: •New compound Ge 4 Ti 5 found by experiments and by DFT ground state calculations. •Enthalpies of formation calculated for different Ge–Ti compounds. •Modifications of the Ge–Ti phase diagram suggested. -- Abstract: The binary phase diagram Ge–Ti was investigated experimentally by powder X-ray diffraction, scanning electron microscopy including EDX analysis, and differential thermal analysis. Total energies of the compounds GeTi 3 , GeTi 2 , Ge 3 Ti 5 , Ge 4 Ti 5 , Ge 5 Ti 6 , GeTi and Ge 2 Ti were calculated for various structure types employing electronic density-functional theory (DFT). Experimental studies as well as electronic calculations show the existence of a new phase Ge 4 Ti 5 (Ge 4 Sm 5 -type, oP36, Pnma) which is formed in a solid state reaction Ge 3 Ti 5 + Ge 5 Ti 6 = Ge 4 Ti 5 . In addition, a significant homogeneity range was observed for the compound Ge 3 Ti 5 and the composition of the liquid phase in the eutectic reaction L = Ge + Ge 2 Ti was found to be at significant higher Ge-content (97.5 at.% Ge) than reported in previous studies. Based on these new results, a modified phase diagram Ge–Ti is suggested. The zero-temperature lattice parameters and the formation enthalpies determined by DTF calculations were found to be in good agreement with experimental data
Observation of a resonance at 4.4 GeV and additional structure near 4.1 GeV in e+e- annihilation

International Nuclear Information System (INIS)

Siegrist, J.; Abrams, G.S.; Boyarski, A.M.; Breidenbach, M.; Bulos, F.; Chinowsky, W.; Feldman, G.J.; Friedberg, C.E.; Fryberger, D.; Goldhaber, G.; Hanson, G.; Hartill, D.L.; Jaros, J.; Jean-Marie, B.; Kadyk, J.A.; Larsen, R.R.; Luke, D.; Luth, V.; Lynch, H.L.; Madaras, R.; Morehouse, C.C.; Nguyen, H.K.; Paterson, J.M.; Perl, M.L.; Peruzzi, I.; Pierre, F.M.; Piccolo, M.; Pun, T.P.; Rapidis, P.; Richter, B.; Sadoulet, B.; Schwitters, R.F.; Tanenbaum, W.; Trilling, G.H.; Vannucci, F.; Whitaker, J.S.; Winkelman, F.C.; Wiss, J.E.

1976-01-01

We observe a resonancelike structure in the total cross section for hadron production by e + e - colliding beams at a mass of 4414 +- 7 MeV having a total width GAMMA = 33 +- 10 MeV. From the area under this resonance, we deduce the partial width to electron pairs to be GAMMA/sub ee/ = 440 +- 140 eV. Further structure of comparable width is present near 4.1 GeV
Solid state synthesis of Mn{sub 5}Ge{sub 3} in Ge/Ag/Mn trilayers: Structural and magnetic studies

Energy Technology Data Exchange (ETDEWEB)

Myagkov, V.G.; Bykova, L.E.; Matsynin, A.A.; Volochaev, M.N.; Zhigalov, V.S.; Tambasov, I.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Mikhlin, Yu L. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation); Velikanov, D.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Bondarenko, G.N. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation)

2017-02-15

The thin-film solid-state reaction between elemental Ge and Mn across chemically inert Ag layers with thicknesses of (0, 0.3, 1 and 2.2 µm) in Ge/Ag/Mn trilayers was studied for the first time. The initial samples were annealed at temperatures between 50 and 500 °C at 50 °C intervals for 1 h. The initiation temperature of the reaction for Ge/Mn (without a Ag barrier layer) was ~ 120 °C and increased slightly up to ~ 250 °C when the Ag barrier layer thickness increased up to 2.2 µm. In spite of the Ag layer, only the ferromagnetic Mn{sub 5}Ge{sub 3} compound and the Nowotny phase were observed in the initial stage of the reaction after annealing at 500 °C. The cross-sectional studies show that during Mn{sub 5}Ge{sub 3} formation the Ge is the sole diffusing species. The magnetic and cross-sectional transmission electron microscopy (TEM) studies show an almost complete transfer of Ge atoms from the Ge film, via a 2.2 µm Ag barrier layer, into the Mn layer. We attribute the driving force of the long-range transfer to the long-range chemical interactions between reacting Mn and Ge atoms. - Graphical abstract: The direct visualization of the solid state reaction between Mn and Ge across a Ag buffer layer at 500 °C. - Highlights: • The migration of Ge, via an inert 2.2 µm Ag barrier, into a Mn layer. • The first Mn{sub 5}Ge{sub 3} phase was observed in reactions with different Ag layers. • The Ge is the sole diffusing species during Mn{sub 5}Ge{sub 3} formation • The long-range chemical interactions control the Ge atomic transfer.
Computer-aided vaccine designing approach against fish pathogens Edwardsiella tarda and Flavobacterium columnare using bioinformatics softwares

Directory of Open Access Journals (Sweden)

Mahendran R

2016-05-01

Full Text Available Radha Mahendran,1 Suganya Jeyabaskar,1 Gayathri Sitharaman,1 Rajamani Dinakaran Michael,2 Agnal Vincent Paul1 1Department of Bioinformatics, 2Centre for Fish Immunology, School of Life Sciences, Vels University, Pallavaram, Chennai, Tamil Nadu, India Abstract: Edwardsiella tarda and Flavobacterium columnare are two important intracellular pathogenic bacteria that cause the infectious diseases edwardsiellosis and columnaris in wild and cultured fish. Prediction of major histocompatibility complex (MHC binding is an important issue in T-cell epitope prediction. In a healthy immune system, the T-cells must recognize epitopes and induce the immune response. In this study, T-cell epitopes were predicted by using in silico immunoinformatics approach with the help of bioinformatics tools that are less expensive and are not time consuming. Such identification of binding interaction between peptides and MHC alleles aids in the discovery of new peptide vaccines. We have reported the potential peptides chosen from the outer membrane proteins (OMPs of E. tarda and F. columnare, which interact well with MHC class I alleles. OMPs from E. tarda and F. columnare were selected and analyzed based on their antigenic and immunogenic properties. The OMPs of the genes TolC and FCOL_04620, respectively, from E. tarda and F. columnare were taken for study. Finally, two epitopes from the OMP of E. tarda exhibited excellent protein–peptide interaction when docked with MHC class I alleles. Five epitopes from the OMP of F. columnare had good protein–peptide interaction when docked with MHC class I alleles. Further in vitro studies can aid in the development of potential peptide vaccines using the predicted peptides. Keywords: E. tarda, F. columnare, edwardsiellosis, columnaris, T-cell epitopes, MHC class I, peptide vaccine, outer membrane proteins
Virulence of Flavobacterium columnare genomovars in rainbow trout Oncorhynchus mykiss.

Science.gov (United States)

Evenhuis, Jason P; LaFrentz, Benjamin R

2016-08-09

Flavobacterium columnare is the causative agent of columnaris disease and is responsible for significant economic losses in aquaculture. F. columnare is a Gram-negative bacterium, and 5 genetic types or genomovars have been described based on restriction fragment length polymorphism of the 16S rRNA gene. Previous research has suggested that genomovar II isolates are more virulent than genomovar I isolates to multiple species of fish, including rainbow trout Oncorhynchus mykiss. In addition, improved genotyping methods have shown that some isolates previously classified as genomovar I, and used in challenge experiments, were in fact genomovar III. Our objective was to confirm previous results with respect to genomovar II virulence, and to determine the susceptibility of rainbow trout to other genomovars. The virulence of 8 genomovar I, 4 genomovar II, 3 genomovar II-B, and 5 genomovar III isolates originating from various sources was determined through 3 independent challenges in rainbow trout using an immersion challenge model. Mean cumulative percent mortality (CPM) of ~49% for genomovar I isolates, ~1% for genomovar II, ~5% for the II-B isolates, and ~7% for the III isolates was observed. The inability of genomovar II isolates to produce mortalities in rainbow trout was unanticipated based on previous studies, but may be due to a number of factors including rainbow trout source and water chemistry. The source of fish and/or the presence of sub-optimal environment may influence the susceptibility of rainbow trout to different F. columnare genomovars.
Structural characterization and compositional dependence of the optical properties of Ge-Ga-La-S chalcohalide glass system

Science.gov (United States)

Li, Lini; Jiao, Qing; Lin, Changgui; Dai, Shixun; Nie, Qiuhua

2018-04-01

In this paper, chalcogenide glasses of 80GeS2sbnd (20sbnd x)Ga2S3sbnd xLa2S3 (x = 0, 1, 3, 5 mol%) were synthesized through the traditional melt-quenching technique. The effects of La2S3 addition on the thermal, optical, and structural properties of Gesbnd Gasbnd S glasses were investigated. Results showed that the synthesized glasses possessed considerably high glass transition temperature, improved glass forming ability, high refractive index, and excellent infrared transmittance. A redshift at the visible absorbing cut-off edge lower than 500 nm was observed with increasing of La2S3 content. Direct and indirect optical band gap values were calculated. SEM result suggested that this glass system owned better glass forming ability and uniformity. Raman spectral analysis indicated that the introduction of La2S3 induced the dissociation of Gesbnd Ge metal bonds and transformed the [S3Gesbnd GeS3] structure to GeS4 tetrahedrons. Consequently, the connectivity between tetrahedrons of the vitreous network was enhanced. This work suggests that La2S3 modified Ge-Gasbnd Lasbnd S glass is a promising material for infrared optical research.
X-ray structural study of Ge(001):Te 1x1 performed at the advanced photon source. Current status of the surface-interface structure beamline at SPring-8

CERN Document Server

Sakata, O

2002-01-01

This article is composed of two parts. In the first half, we describe a study that we performed at 5ID-C of the Dupont- Northwestern University-Dow (DND) CAT in the Advanced Photon Source, the Argonne National Laboratory for 1998 to 2000. A surface structure of Ge(001):Te 1x1 was determined by least-squares fits of x-ray scattered intensities with calculations based on some surface atomic structural models. The fitted structural model has a characteristic that a direction of a Ge-Ge dimer bond on the first Ge atomic layer is perpendicular to a Te missing row. It was distinct from those based on first-principles total energy calculations. In the second half, we introduce up-to-the-minute status of BL13XU for surface-interface structural studies at SPring-8. Scientific research goals we desire are mentioned as well. (author)
Phase equilibria, crystal chemistry, electronic structure and physical properties of Ag-Ba-Ge clathrates

Energy Technology Data Exchange (ETDEWEB)

Zeiringer, I.; Chen Mingxing [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Bednar, I.; Royanian, E.; Bauer, E. [Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstr. 8-10, 1040 Wien (Austria); Podloucky, R.; Grytsiv, A. [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Rogl, P., E-mail: peter.franz.rogl@univie.ac.at [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Effenberger, H. [Institute of Mineralogy and Crystallography, University of Vienna, A-1090 Wien (Austria)

2011-04-15

In the Ag-Ba-Ge system the clathrate type-{Iota} solid solution, Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y}, extends at 800 deg. C from binary Ba{sub 8}Ge{sub 43{open_square}3} ({open_square} is a vacancy) to Ba{sub 8}Ag{sub 5.3}Ge{sub 40.7}. For the clathrate phase (1 {<=} x {<=} 5.3) the cubic space group Pm3-bar n was established by X-ray powder diffraction and confirmed by X-ray single-crystal analyses of the samples Ba{sub 8}Ag{sub 2.3}Ge{sub 41.9{open_square}1.8} and Ba{sub 8}Ag{sub 4.4}Ge{sub 41.3{open_square}0.3}. Increasing the concentration of Ag causes the lattice parameters of the solid solution to increase linearly from a value of a = 1.0656 (x = 0, y = 3) to a = 1.0842 (x = 4.8, y = 0) nm. Site preference determination using X-ray refinement reveals that Ag atoms preferentially occupy the 6d site randomly mixed with Ge and vacancies, which become filled in the compound Ba{sub 8}Ag{sub 4.8}Ge{sub 41.2} when the Ag content increases. At 600 {sup o}C the phase region of the clathrate solution Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} becomes separated from the Ba-Ge boundary and extends from 6.6 to 9.8 at.% Ag. The compound Ba{sub 6}Ge{sub 25} (clathrate type-{Iota}X) dissolves at 800 {sup o}C a maximum of 1.5 at.% Ag. The homogeneity regions of the two ternary compounds BaAg{sub 2-x}Ge{sub 2+x} (ThCr{sub 2}Si{sub 2}-type, 0.2 {<=} x {<=} 0.7) and Ba(Ag{sub 1-x}Ge{sub x}){sub 2} (AlB{sub 2}-type, 0.65 {<=} x {<=} 0.75) were established at 800 deg. C. Studies of transport properties for the series of Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} compounds evidenced that electrons are the predominant charge carriers with the Fermi energy close to a gap. Its position can be fine-tuned by the substitution of Ge by Ag atoms and by mechanical processing of the starting material, Ba{sub 8}Ge{sub 43}. The proximity of the electronic structure at Fermi energy of Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} to a gap is also corroborated by density
Structural and optical properties of Ni doped ZnSe nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Yadav, Kanta; Dwivedi, Y.; Jaggi, Neena, E-mail: neena_jaggi@rediffmail.com

2015-02-15

In the present work synthesis of ZnSe:Ni nanoparticles using a simple solvothermal method has been discussed. The structural characterizations of as synthesized materials were done by powder X-ray diffraction (XRD), Transmission electron microscope (TEM) and High resolution transmission microscope (HRTEM) imaging techniques, which revealed formation of core–shell nanoparticles with crystallite size 2–4 nm. The structural parameters such as lattice constants, internal strain, dislocation density etc. of ZnSe and Ni doped ZnSe nanocrystals were estimated. Nickel doping in ZnSe host is verified by the Raman spectroscopy. Optical properties were diagnosed by UV–vis absorption and photoluminescence (PL) techniques. The observed blue-shift in UV–vis absorption edge of the prepared sample of ZnSe as compared to its value for the bulk counterpart indicates formation of nanosized particles. PL spectra of Ni{sup 2+} doped samples indicate red-shift and improved emission intensity. - Highlights: • Synthesis of core shell structures of the ZnSe by simple approach. • Enhancement of the photoluminescence emission with the increase in the concentration of Ni a transition metal into the host material. • Increase in the dislocation density and strain with decrease in grain size.
Influence of defect structure on magnetic and electronic properties of Hg1-x Crx Se and Hg1-x Cox Se

International Nuclear Information System (INIS)

Prozorovskij, V.D.; Reshidova, I.Yu.; Puzynya, A.I.; Paranchich, Yu.S.

1996-01-01

The results of experimental investigations of the Shubnikov-de Haas oscillations at superhigh frequencies, electron spin resonance, magnetic susceptibility, relaxation dielectric losses, and galvanomagnetic measurements in the Hg 1-x Cr x Se and Hg 1-x Co x Se single crystal samples are presented. Analysis of the results Hg 1-x Cr x Se and Hg 1-x Co x Se depend on the defect structure of the substance and the type of defects making this structure. The manifestation of critical phenomena in Hg 1-x Cr x Se also depends on the defect structure
Gradual pressure-induced change in the magnetic structure of the noncollinear antiferromagnet Mn3Ge

Science.gov (United States)

Sukhanov, A. S.; Singh, Sanjay; Caron, L.; Hansen, Th.; Hoser, A.; Kumar, V.; Borrmann, H.; Fitch, A.; Devi, P.; Manna, K.; Felser, C.; Inosov, D. S.

2018-06-01

By means of powder neutron diffraction we investigate changes in the magnetic structure of the coplanar noncollinear antiferromagnet Mn3Ge caused by an application of hydrostatic pressure up to 5 GPa. At ambient conditions the kagomé layers of Mn atoms in Mn3Ge order in a triangular 120∘ spin structure. Under high pressure the spins acquire a uniform out-of-plane canting, gradually transforming the magnetic texture to a noncoplanar configuration. With increasing pressure the canted structure fully transforms into the collinear ferromagnetic one. We observed that magnetic order is accompanied by a noticeable magnetoelastic effect, namely, spontaneous magnetostriction. The latter induces an in-plane magnetostrain of the hexagonal unit cell at ambient pressure and flips to an out-of-plane strain at high pressures in accordance with the change of the magnetic structure.
Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

Science.gov (United States)

Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

2017-07-01

Ge(x)[SiO2](1-x) (0.1 ⩽ x ⩽ 0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x ⩾ 0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.
Change in local atomic and chemical bonding structures of Ge2Sb2Te5 alloys by isothermal heat treatment

International Nuclear Information System (INIS)

Lim, Woo-Sik; Cho, Sung-June; Lee, Hyun-Yong

2008-01-01

In this work, we report evaluation of the atomic-scale phase transformation characteristics in one of the most comprehensively utilized phase change materials today, Ge 2 Sb 2 Te 5 thin film. The phase transformation of Ge 2 Sb 2 Te 5 thin film from amorphous to hexagonal structure via fcc structure was confirmed by XRD measurements. The approximate values of optical energy gap are 0.72 and 0.50 eV, with slopes (B 1/2 ) in the extended absorption region of 5.3 x 10 5 and 10 x 10 5 cm -1 ·eV -1 for the amorphous and fcc-crystalline structures, respectively. In addition, X-ray photoelectron spectroscopy analysis revealed strengthening of the Te-Te bond as well as weakening of the Ge-Te bond during the amorphous-to-crystalline transition. This trend was also observed in extended X-ray absorption fine structure analysis where the Ge metallic bond lengths in the amorphous, fcc, and hexagonal structures were 0.262, 0.280, and 0.290 nm
Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

Energy Technology Data Exchange (ETDEWEB)

Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

2016-07-15

Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.
Structural and optical properties of CdSe nanosheets

Science.gov (United States)

Solanki, Rekha Garg; Rajaram, P.; Arora, Aman

2018-04-01

Nanosheets of CdSe have been synthesized using a solvothermal route using citric acid as an additive. It is found that the citric acid effectively controls the structural and optical properties of CdSe nanostructures. XRD studies confirm the formation of hexagonal wurtzite phase of CdSe. The FESEM micrographs show that the obtained CdSe nanocrystals are in the form of very thin sheets (nanosheets). Optical absorption studies as well as Photoluminescence spectra show that the optical gap is around 1.76 eV which is close to the reported bulk value of 1.74 eV. The prepared CdSe nanosheets because of large surface area may be useful for catalytic activities in medicine, biotechnology and environmental chemistry and in biomedical imaging for in vitro detection of a breast cancer cells.
A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

Science.gov (United States)

Zhou, Xilin; Dong, Weiling; Zhang, Hao; Simpson, Robert E

2015-06-11

Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into GeO2 and TeO2, which inhibits the technologically useful abrupt change in properties. Increasing the oxygen content in GeTe-O reduces the difference in film thickness and mass density between the amorphous and crystalline states. For oxygen concentrations between 5 and 6 at.%, the amorphous material and the crystalline material have the same density. Above 6 at.% O doping, crystallisation exhibits an anomalous density change, where the volume of the crystalline state is larger than that of the amorphous. The high thermal stability and zero-density change characteristic of Oxygen-incorporated GeTe, is recommended for efficient and low stress phase change memory devices that may operate at elevated temperatures.
70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

International Nuclear Information System (INIS)

Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

1978-01-01

The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape
Measurement of the Deuteron Spin Structure Function g_1^d(x) for 1 (GeV/c)^2 < Q^2 < 40 (GeV/c)^2

OpenAIRE

E155 Collaboration

1999-01-01

New measurements are reported on the deuteron spin structure function g_1^d. These results were obtained from deep inelastic scattering of 48.3 GeV electrons on polarized deuterons in the kinematic range 0.01 < x < 0.9 and 1 < Q^2 < 40 (GeV/c)^2. These are the first high dose electron scattering data obtained using lithium deuteride (6Li2H) as the target material. Extrapolations of the data were performed to obtain moments of g_1^d, including Gamma_1^d, and the net quark polarization Delta Si...

Measurement of the deuteron spin structure function $g^{d}_1(x)$ for $1\\ (GeV/c)^2 < Q^2 < 40\\ (GeV/c)^2$.

OpenAIRE

Anthony , P.L.; Arnold , R.G.; Averett , T.; Band , H.R.; Berisso , M.C.; Borel , H.; Bosted , P.E.; Bultmann , S.L.; Buenerd , M.; Chupp , T.; Churchwell , S.; Court , G.R.; Crabb , D.; Day , D.; Decowski , P.

1999-01-01

New measurements are reported on the deuteron spin structure function g_1^d. These results were obtained from deep inelastic scattering of 48.3 GeV electrons on polarized deuterons in the kinematic range 0.01 < x < 0.9 and 1 < Q^2 < 40 (GeV/c)^2. These are the first high dose electron scattering data obtained using lithium deuteride (6Li2H) as the target material. Extrapolations of the data were performed to obtain moments of g_1^d, including Gamma_1^d, and the net quark polarization Delta Si...
Fractional Hoppinglike Motion in Columnar Mesophases of Semiflexible Rodlike Particles

NARCIS (Netherlands)

Naderi, S.; Pouget, E.; Ballesta, P.; van der Schoot, P. P. A. M.; Lettinga, M.P.; Grelet, E

2013-01-01

We report on single-particle dynamics of strongly interacting filamentous fd virus particles in the liquid-crystalline columnar state in aqueous solution. From fluorescence microscopy, we find that rare, discrete events take place, in which individual particles engage in sudden, jumplike motion
Yield of 73Se for various reactions and its chemical processing

International Nuclear Information System (INIS)

Nozaki, T.; Itoh, Y.; Ogawa, K.

1979-01-01

Excitation curves for the formation of 73 Se by the following reactions were measured up to proton energy of 50 MeV and 3 He- and α-particle energies of 40 MeV, together with those for byproduct formation reactions: (1) 75 As(p, 3n) 73 Se, (2) Ge + 3 He → 73 Se, and (3) Ge + α → 73 Se. The proton reaction has proved to be much superior to the other reactions both in yield and product purity. Volatilization of 73 Se from a solution of condensed polyphosphoric acid was found to give an excellent method of 73 Se separation from various arsenic targets without carrier. Also, solvent extraction of red selenium 73 Se with a minute amount of carrier was shown to be a useful separation method. (author)
Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

International Nuclear Information System (INIS)

Prokofieva, Violetta K.; Pavlova, Lydia M.

2014-01-01

Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition
Transitional basal cells at the squamous-columnar junction generate Barrett’s oesophagus

Science.gov (United States)

Jiang, Ming; Li, Haiyan; Zhang, Yongchun; Yang, Ying; Lu, Rong; Liu, Kuancan; Lin, Sijie; Lan, Xiaopeng; Wang, Haikun; Wu, Han; Zhu, Jian; Zhou, Zhongren; Xu, Jianming; Lee, Dong-Kee; Zhang, Lanjing; Lee, Yuan-Cho; Yuan, Jingsong; Abrams, Julian A.; Wang, Timothy G.; Sepulveda, Antonia R.; Wu, Qi; Chen, Huaiyong; Sun, Xin; She, Junjun; Chen, Xiaoxin; Que, Jianwen

2017-01-01

In several organ systems the transitional zone between different types of epithelia is a hotspot for pre-neoplastic metaplasia and malignancy1–3. However, the cell-of-origin for the metaplastic epithelium and subsequent malignancy, remains obscure1–3. In the case of Barrett’s oesophagus (BE), intestinal metaplasia occurs at the gastro-oesophageal junction, where stratified squamous epithelium transitions into simple columnar cells4. Based on different experimental models, several alternative cell types have been proposed as the source of the metaplasia, but in all cases the evidence is inconclusive and no model completely mimics BE with the presence of intestinal goblet cells5–8. Here, we describe a novel transitional columnar epithelium with distinct basal progenitor cells (p63+ KRT5+ KRT7+) in the squamous-columnar junction (SCJ) in the upper gastrointestinal tract of the mouse. We use multiple models and lineage tracing strategies to show that this unique SCJ basal cell population serves as a source of progenitors for the transitional epithelium. Moreover, upon ectopic expression of CDX2 these transitional basal progenitors differentiate into intestinal-like epithelium including goblet cells, thus reproducing Barrett’s metaplasia. A similar transitional columnar epithelium is present at the transitional zones of other mouse tissues, including the anorectal junction, and, importantly, at the gastro-oesophageal junction in the human gut. Acid reflux-induced oesophagitis and the multilayered epithelium (MLE) believed to be a precursor of BE are both characterized by the expansion of the transitional basal progenitor cells. Taken together our findings reveal the presence of a previously unidentified transitional zone in the epithelium of the upper gastrointestinal tract and provide evidence that the p63+ KRT7+ basal cells in this zone are the cell-of-origin for MLE and BE. PMID:29019984
Properties of thin optical Ge films related to their technology dependent structure

Energy Technology Data Exchange (ETDEWEB)

Schirmer, G; Duparre, A; Heerdegen, W; Kuehn, H J; Lehmann, A; Richter, W; Schroeter, B [Dept. of Physics, Friedrich-Schiller Univ., Jena (Germany, F.R.); Hacker, E; Meyer, J [Jenaoptik GmbH Carl Zeiss, Jena (Germany, F.R.)

1991-03-16

Sputtered and evaporated optical Ge films are investigated using electron microscopy and diffraction, total integrated scattering, infrared reflection absorption spectroscopy. Auger electron spectroscopy, and optical transmission measurements to observe differences of the chemical composition, atomic structure, morphology, optical constants, and degradation in relation to the parameters of technology during preparation. (orig.).
Ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) – New representatives of the YIrGe{sub 2} type

Energy Technology Data Exchange (ETDEWEB)

Voßwinkel, Daniel; Heletta, Lukas; Hoffmann, Rolf-Dieter; Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de

2016-11-15

The YIrGe{sub 2} type ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) were synthesized from the elements by arc-melting and characterized by powder X-ray diffraction. The structure of DyRhGe{sub 2} was refined from single crystal X-ray diffractometer data: Immm, a = 426.49(9), b = 885.0(2), c = 1577.4(3) pm, wR2 = 0.0533, 637 F{sup 2} values, 30 variables (300 K data). The structure contains two crystallographically independent dysprosium atoms in pentagonal prismatic and hexagonal prismatic coordination. The three-dimensional [RhGe{sub 2}] polyanion is stabilized through covalent Rh–Ge (243–261 pm) and Ge–Ge (245–251 pm) bonding. The close structural relationship with the slightly rhodium-poorer germanides RE{sub 5}Rh{sub 4}Ge{sub 10} (≡ RERh{sub 0.8}Ge{sub 2}) is discussed. Temperature-dependent magnetic susceptibility measurements reveal Pauli paramagnetism for YRhGe{sub 2} and Curie-Weiss paramagnetism for RERhGe{sub 2} with RE = Gd, Tb, Dy and Ho. These germanides order antiferromagnetically at T{sub N} = 7.2(5), 10.6(5), 8.1(5), and 6.4(5) K, respectively. - Graphical abstract: The germanides RERhGe{sub 2} (RE = Y, Gd-Ho) are new representatives of the YIrGe{sub 2} type.
Magnetic ordering in the monoclinic structure of Nd5Si1.45Ge2.55 and Pr5Si1.5Ge2.5 studied by means of neutron powder diffraction

International Nuclear Information System (INIS)

Magen, C; Ritter, C; Morellon, L; Algarabel, P A; Ibarra, M R

2004-01-01

The compounds Nd 5 Si 1.45 Ge 2.55 and Pr 5 Si 1.5 Ge 2.5 have been investigated by means of magnetization measurements and neutron powder diffraction techniques. These alloys present a room-temperature monoclinic Gd 5 Si 2 Ge 2 -type crystallographic structure and, on cooling, both systems order ferromagnetically, at T C = 56 and 32 K, respectively, from a high-temperature paramagnetic to a low-temperature complex canted ferromagnetic state. The monoclinic crystallographic structure remains unchanged upon cooling down to 4 K, demonstrating the existence of a monoclinic ferromagnetic phase, and the possibility of a full decoupling of magnetic and crystallographic degrees of freedom in the 5:4 lanthanide intermetallic compounds
GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures

Science.gov (United States)

Zhou, Liqin; Guo, Yu; Zhao, Jijun

2018-01-01

Two dimensional (2D) materials provide a versatile platform for nanoelectronics, optoelectronics and clean energy conversion. Based on first-principles calculations, we propose a novel kind of 2D materials - GeAs and SiAs monolayers and investigate their atomic structure, thermodynamic stability, and electronic properties. The calculations show that monolayer GeAs and SiAs sheets are energetically and dynamically stable. Their small interlayer cohesion energies (0.191 eV/atom for GeAs and 0.178 eV/atom for SiAs) suggest easy exfoliation from the bulk solids that exist in nature. As 2D semiconductors, GeAs and SiAs monolayers possess band gap of 2.06 eV and 2.50 eV from HSE06 calculations, respectively, while their band gap can be further engineered by the number of layers. The relatively small and anisotropic carrier effective masses imply fast electric transport in these 2D semiconductors. In particular, monolayer SiAs is a direct gap semiconductor and a potential photocatalyst for water splitting. These theoretical results shine light on utilization of monolayer or few-layer GeAs and SiAs materials for the next-generation 2D electronics and optoelectronics with high performance and satisfactory stability.
Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

2016-01-01

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.
Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang

2016-10-28

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.
Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

OpenAIRE

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2016-01-01

The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...
Suppression of surface barriers in superconductors by columnar defects

International Nuclear Information System (INIS)

Koshelev, A. E.; Vinokur, V. M.

2001-01-01

We investigate the influence of columnar defects in layered superconductors on the thermally activated penetration of pancake vortices through the surface barrier. Columnar defects, located near the surface, facilitate penetration of vortices through the surface barrier, by creating ''weak spots,'' through which pancakes can penetrate into the superconductor. Penetration of a pancake mediated by an isolated column, located near the surface, is a two-stage process involving hopping from the surface to the column and the detachment from the column into the bulk; each stage is controlled by its own activation barrier. The resulting effective energy is equal to the maximum of those two barriers. For a given external field there exists an optimum location of the column for which the barriers for the both processes are equal and the reduction of the effective penetration barrier is maximal. At high fields the effective penetration field is approximately 2 times smaller than in unirradiated samples. We also estimate the suppression of the effective penetration field by column clusters. This mechanism provides further reduction of the penetration field at low temperatures
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

Science.gov (United States)

Mio, Antonio M; Privitera, Stefania M S; Bragaglia, Valeria; Arciprete, Fabrizio; Bongiorno, Corrado; Calarco, Raffaella; Rimini, Emanuele

2017-02-10

The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently ordered crystalline phases are the logic states. A detailed knowledge of the stacking plane sequence, of the local composition and of the vacancy distribution is therefore crucial in order to understand the underlying mechanism of phase transformations in the crystalline state and to evaluate the retention properties. This information is provided, as reported in this paper, by scanning transmission electron microscopy analysis of polycrystalline and epitaxial Ge 2 Sb 2 Te 5 thin samples, using the Z-contrast high-angle annular dark field method. Electron diffraction clearly confirms the presence of compositional mixing with stacking blocks of 11, 9 or 7 planes corresponding to Ge 3 Sb 2 Te 6 , Ge 2 Sb 2 Te 5 , and GeSb 2 Te 4 , alloys respectively in the same trigonal phase. By increasing the degree of order (according to the annealing temperature, the growth condition, etc) the spread in the statistical distribution of the blocks reduces and the distribution of the atoms in the cation planes also changes from a homogenous Ge/Sb mixing towards a Sb-enrichment in the planes closest to the van der Waals gaps. Therefore we show that the trigonal phase of Ge 2 Sb 2 Te 5 , the most studied chalcogenide for phase-change memories, is actually obtained in different configurations depending on the distribution of the stacking blocks (7-9-11 planes) and on the atomic occupation (Ge/Sb) at the cation planes. These results give an insight in the factors determining the stability of the trigonal phase and suggest a dynamic path evolution that could have a key role in the switching mechanism of interfacial phase change memories
Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

Science.gov (United States)

Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

2014-03-01

The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.
Complete genome sequence analysis of the fish pathogen Flavobacterium columnare provides insights into antibiotic resistance and pathogenicity related genes.

Science.gov (United States)

Zhang, Yulei; Zhao, Lijuan; Chen, Wenjie; Huang, Yunmao; Yang, Ling; Sarathbabu, V; Wu, Zaohe; Li, Jun; Nie, Pin; Lin, Li

2017-10-01

We analyzed here the complete genome sequences of a highly virulent Flavobacterium columnare Pf1 strain isolated in our laboratory. The complete genome consists of a 3,171,081 bp circular DNA with 2784 predicted protein-coding genes. Among these, 286 genes were predicted as antibiotic resistance genes, including 32 RND-type efflux pump related genes which were associated with the export of aminoglycosides, indicating inducible aminoglycosides resistances in F. columnare. On the other hand, 328 genes were predicted as pathogenicity related genes which could be classified as virulence factors, gliding motility proteins, adhesins, and many putative secreted proteases. These genes were probably involved in the colonization, invasion and destruction of fish tissues during the infection of F. columnare. Apparently, our obtained complete genome sequences provide the basis for the explanation of the interactions between the F. columnare and the infected fish. The predicted antibiotic resistance and pathogenicity related genes will shed a new light on the development of more efficient preventional strategies against the infection of F. columnare, which is a major worldwide fish pathogen. Copyright © 2017 Elsevier Ltd. All rights reserved.
Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation

International Nuclear Information System (INIS)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Xiong, Yuhua; Zhang, Jing; Zhao, Chao

2015-01-01

Highlights: • The dominant key to achieve superior Ge passivation by GeO x is investigated. • The interface state density decreases with increasing the GeO x thickness. • The Ge 3+ oxide component is the dominant key to passivate the Ge surface. • The atomic structure at the GeO x /Ge interface is built by XPS. - Abstract: The dominant key to achieve superior Ge surface passivation by GeO x interfacial layer is investigated based on ozone oxidation. The interface state density (D it ) measured from low temperature conduction method is found to decrease with increasing the GeO x thickness (0.26–1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeO x /Ge with different GeO x thicknesses. And the XPS results show that Ge 3+ oxide component is responsible to the decrease of the D it due to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge 3+ component is the dominant key to achieve low D it for Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeO x regardless of the oxidation methods to grow the GeO x interfacial layer. As a result, to explore a growth process that can realize sufficient Ge 3+ component in the GeO x interlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.
Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

2015-10-14

Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.
Ion current prediction model considering columnar recombination in alpha radioactivity measurement using ionized air transportation

International Nuclear Information System (INIS)

Naito, Susumu; Hirata, Yosuke; Izumi, Mikio; Sano, Akira; Miyamoto, Yasuaki; Aoyama, Yoshio; Yamaguchi, Hiromi

2007-01-01

We present a reinforced ion current prediction model in alpha radioactivity measurement using ionized air transportation. Although our previous model explained the qualitative trend of the measured ion current values, the absolute values of the theoretical curves were about two times as large as the measured values. In order to accurately predict the measured values, we reinforced our model by considering columnar recombination and turbulent diffusion, which affects columnar recombination. Our new model explained the considerable ion loss in the early stage of ion diffusion and narrowed the gap between the theoretical and measured values. The model also predicted suppression of ion loss due to columnar recombination by spraying a high-speed air flow near a contaminated surface. This suppression was experimentally investigated and confirmed. In conclusion, we quantitatively clarified the theoretical relation between alpha radioactivity and ion current in laminar flow and turbulent pipe flow. (author)
Local structure and defect chemistry of [(SnSe)1.15]m(TaSe2) ferecrystals – A new type of layered intergrowth compound

International Nuclear Information System (INIS)

Grosse, Corinna; Atkins, Ryan; Kirmse, Holm; Mogilatenko, Anna; Neumann, Wolfgang; Johnson, David C.

2013-01-01

Highlights: •The crystal structure of [(SnSe) 1.15 ] m (TaSe 2 ) ferecrystals was analyzed by TEM. •The layers exhibit turbostratic disorder, but we also observed a local ordering. •The structures of the SnSe and TaSe 2 layers are similar to binary SnSe and 2H-TaSe 2 . •An increasing in-plane SnSe grain size with increasing m was observed. •Defect areas with missing, substituted or additional layers were found. -- Abstract: The atomic structure of the family of ferecrystals [(SnSe) 1.15 ] m (TaSe 2 ) (m = 1, 3, and 6) was investigated by means of transmission electron microscopy. The tantalum in the TaSe 2 layers was observed to have trigonal prismatic coordination similar to that found in the 2H polytype of bulk TaSe 2 . The structure of the SnSe constituent was found to be similar to that of orthorhombic α-SnSe. In the compounds with m = 1 and m = 3, regions with a local ordering of the layers along a commensurate axis, similar to the ordering in conventional misfit layer compounds, were observed. However, on a longer range the ferecrystals were found to exhibit a turbostratically disordered structure. Stacking defects were occasionally found in the samples in which a layer is interrupted and the surrounding layers are bent around these defects, while maintaining abrupt interfaces instead of interdiffusing. Volume defects were found in one sample of [(SnSe) 1.15 ] 1 (TaSe 2 ) 1 in which a SnSe layer locally substitutes a part of a TaSe 2 layer without interrupting the surrounding layers

New members of the A2 M ‧ M2″ structure family (A=Ca, Sr, Yb, La; M ‧ = In , Sn , Pb; M ″ = Si , Ge)

Science.gov (United States)

Jehle, Michael; Dürr, Ines; Fink, Saskia; Lang, Britta; Langenmaier, Michael; Steckhan, Julia; Röhr, Caroline

2015-01-01

The new mixed tetrelides Sr2PbGe2 and Yb2SnGe2, several mixed Ca/Sr (AII) germanides A2II (Sn, Pb)Ge2 and two polymorphs of La2 InSi2 represent new members of the general structure family of ternary alkaline-earth/lanthanoid main group silicides/germanides A2 M ‧ M2″ (M ‧ = In , Sn , Pb ; M ″ = Si , Ge). All compounds were synthesized from melts of the elements and their crystal structures have been determined by means of single crystal X-ray diffraction. Sr2PbGe2 (Cmmm, a=402.36(11), b=1542.3(4), c=463.27(10) pm) crystallizes with the Mn2AlB2 -type structure. In exhibiting infinite planar Ge zig-zag chains, it represents one border of the compound series. The other borderline case, where only [Ge2 ] dumbbells are left as Ge building units, is represented by the Ca/Yb tin germanides Ca2SnGe2 and Yb2SnGe2 (Mo2FeB2 -type; P4/mbm, a=748.58(13)/740.27(7), c=445.59(8)/435.26(5) pm). In between these two border structures compounds with variable Si/Ge chain lengths could be obtained by varying the averaged size of the AII cations: Ca0.45Sr1.55PbGe2 (new structure type; Pbam, a=791.64(5), b=2311.2(2), c=458.53(3) pm) contains planar six-membered chain segments [Ge6 ]. Tetrameric pieces [Ge4 ] are the conspicuous structure elements in Ca1.16Sr0.84SnGe2 and La2 InSi2 (La2InNi2 -type; Pbam, a=781.01(2)/762.01(13), b=1477.95(3)/1494.38(6), c=457.004(9)/442.1(3) pm). The tetragonal form of 'La2 In Si2‧ (exact composition: La2In1.07Si1.93, P4/mbm, a=1309.11(12), c=443.32(4) pm) also crystallizes in a new structure type, containing only [Si3 ] trimers as cutouts of the planar chains. In all structures the Si/Ge zig-zag chains/chain segments are connected by In/Sn/Pb atoms to form planar M layers, which are separated by pure A layers. Band structure calculations within the FP-LAPW DFT approach together with the Zintl formalism, extended by the presence of hypervalent bonding of the heavier M ‧ elements, give insight into the chemical bonding of this series of p
Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

Directory of Open Access Journals (Sweden)

Song Feng

2018-01-01

Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.
The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

International Nuclear Information System (INIS)

Mahmodi, H.; Hashim, M. R.

2010-01-01

In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.
Crystal structure and thermal expansion of Mn(1-x)Fe(x)Ge.

Science.gov (United States)

Dyadkin, Vadim; Grigoriev, Sergey; Ovsyannikov, Sergey V; Bykova, Elena; Dubrovinsky, Leonid; Tsvyashchenko, Anatoly; Fomicheva, L N; Chernyshov, Dmitry

2014-08-01

A series of temperature-dependent single-crystal and powder diffraction experiments has been carried out using synchrotron radiation in order to characterize the monogermanides of Mn, Fe and their solid solutions. The MnGe single crystal is found to be enantiopure and we report the absolute structure determination. The thermal expansion, parametrized with the Debye model, is discussed from the temperature-dependent powder diffraction measurements for Mn(1-x)Fe(x)Ge (x = 0, 0.1, 0.2, 0.25, 0.3, 0.4, 0.5, 0.6, 0.7, 0.75, 0.8, 0.9). Whereas the unit-cell dimension and the Debye temperature follow a linear trend as a function of composition, the thermal expansion coefficient deviates from linear dependence with increasing Mn content. No structural phase transformations have been observed for any composition in the temperature range 80-500 K for both single-crystal and powder diffraction, indicating that the phase transition previously observed with neutron powder diffraction most probably has a magnetic origin.
Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

Energy Technology Data Exchange (ETDEWEB)

Dong, Yi; Rehman, Habib ur; Springborg, Michael [Physical and Theoretical Chemistry, University of Saarland, 66123 Saarbrücken (Germany)

2015-01-22

The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.
Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

DEFF Research Database (Denmark)

Shim, Irene; Baba, M. Sai; Gingerich, K.A.

2002-01-01

The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term and for t......The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term...... excited states are presented. Thermal functions based on the theoretically determined molecular parameters were used to derive the thermodynamic properties of the Ge-2 molecule from new mass spectrometric equilibrium data. The literature value for the dissociation energy of Ge-2 has been re...
Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

Science.gov (United States)

Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

2016-07-29

The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.
Sickeningly sweet: L-rhamnose stimulates Flavobacterium columnare biofilm formation and virulence

Science.gov (United States)

Flavobacterium columnare, the causative agent of columnaris disease causes substantial mortality worldwide in numerous freshwater finfish species. Due to its global significance and impact on the aquaculture industry continual efforts to better understand basic mechanisms that contribute to disease ...
An investigation of proton pair correlations relevant to the neutrinoless double beta decay of 76Ge

Science.gov (United States)

Ticehurst, David R.

The observation of neutrinoless double beta decay (0nubetabeta ) would demonstrate that the neutrino is a Majorana particle and allow determination of its mass by comparing the measured decay rate to the calculated rate. The main uncertainty in the calculation of the 0 nubetabeta rate is due to uncertainties in the nuclear structure models used in the computation of the nuclear matrix elements for the decay process. This project tested the validity of using wavefunctions for the nuclear states involved in the 0nubetabeta process that are based on a first-order application of the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. In the BCS approximation, most of the strength for two-nucleon transfer reactions should be for transitions to the 0 + ground state of the final nucleus (i.e., little strength should go to the 0+ excited states). This experiment measured the strength to the first 0+ excited state for the 74Ge( 3He,n)76Se and 76Ge( 3He,n)78Se reactions relative to the strength for transition to the 0+ ground state in selenium. For both nuclei, and at 3He beam energies of 15 and 21 MeV, the observed relative strength for transfer to the first 0+ excited state was less than 13%. This result supports the validity of using the BCS approximation to describe the ground state of both 76Se and 78Se and is consistent with the results of recent ( 3He,n) cross section measurements on 74Ge and 76Ge. In addition, the magnitude and shape of the measured angular distributions suggest that contribution of the sequential two-nucleon transfer process, which is an indicator of long-range nucleon-nucleon correlations, is over-predicted by the DWBA code FRESCO.
Innovative Columnar Type of Grid Array SJ BIST HALT Method, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Ridgetop will develop a superior method for testing and qualifying columnar type of grid arrays such as field programmable gate arrays (FPGAs) packaged in column...
Electronic structures of GeSi nanoislands grown on pit-patterned Si(001 substrate

Directory of Open Access Journals (Sweden)

Han Ye

2014-11-01

Full Text Available Patterning pit on Si(001 substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in {105} pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.
Optical Properties of Multilayer CdSe/POLYMER Structures

Science.gov (United States)

Red'Ko, V. P.; Voitenkov, A. I.; Kovalenko, O. E.

The effects of preparation condition, concentration and size of particles upon optical and photoelectrical characteristics of multilayer structures CdSe/polyethylene terephthalate obtained by electron-beam evaporation were investigated.
Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

International Nuclear Information System (INIS)

Chen, Wen-Hua; Liu, Chang-Hai; Li, Qin-Liang; Sun, Qi-Jun; Liu, Jie; Gao, Xu; Sun, Xuhui; Wang, Sui-Dong

2014-01-01

Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide. (paper)
Growth and characterization of Ge nano-structures on Si(113) by adsorbate-mediated epitaxy; Wachstum und Charakterisierung von Ge-Nanostrukturen auf Si(113) durch Adsorbat-modifizierte Epitaxie

Energy Technology Data Exchange (ETDEWEB)

Clausen, T.

2006-11-15

In the work presented here Ge nano-structures on Si(113) substrates have been grown by adsorbate-mediated epitaxy at sample temperatures between 400 C and 700 C. The Ge nano-islands and nano-layers have been investigated regarding their atomic reconstruction, morphology, strain state, chemical composition and defect structure. Various in-situ and ex-situ experimental techniques have been used, as there are low-energy electron diffraction, low-energy electron microscopy, X-ray photoemission electron microscopy, spot profile analysis low-energy electron diffraction, grazing incidence X-ray diffraction, scanning tunneling microscopy, atomic force microscopy, scanning electron microscopy and transmission electron microscopy. On a clean Si(113) surface Ge preferentially nucleates at surface step edges and forms a wetting layer exhibiting a Ge-(2 x 2) surface reconstruction. With increasing growth temperature the Ge islands are elongated in the [33 anti 2] direction. Simultaneously, the average island size increases with decreasing island density. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced. At 600 C the Si concentration of the islands amounts to about 41% and the residual lattice strain of the islands is found to about 23 %. The adsorption of Gallium on a clean Si(113) substrate leads to the formation of well ordered surface facets in the [1 anti 10] direction with a periodicity of about 43 nm in the [33 anti 2] direction. From reciprocal space maps in different ({kappa} {sub perpendicular} {sub to} -{kappa} {sub parallel}) planes both facet angles are determined to be about 9.8 with respect to the [113] direction. Thus the facet orientations are identified to be (112) and (115), showing (6 x 1) and (4 x 1) surface reconstructions, respectively. Ge deposition on the faceted Si(113) leads to a high density of ordered 3D Ge nano-islands beaded at the surface facets. The size of these islands is
Low temperature formation of higher-k cubic phase HfO{sub 2} by atomic layer deposition on GeO{sub x}/Ge structures fabricated by in-situ thermal oxidation

Energy Technology Data Exchange (ETDEWEB)

Zhang, R., E-mail: zhang@mosfet.t.u-tokyo.ac.jp [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Information Science and Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027 (China); Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S. [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-02-01

We have demonstrated a low temperature formation (300 °C) of higher-k HfO{sub 2} using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO{sub x} interfacial layer. It is found that the cubic phase is dominant in the HfO{sub 2} film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO{sub 2} film on a 1-nm-thick GeO{sub x} form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO{sub 2} can be induced by the formation of six-fold crystalline GeO{sub x} structures in the underlying GeO{sub x} interfacial layer.
Study of the influence of volume fraction of ceramic inclusions in NiCr-TiC composite with columnar structure on its mechanical behavior

Science.gov (United States)

Eremina, Galina M.; Smolin, Alexey Yu.; Shilko, Evgeny V.

2017-12-01

Metal-ceramic materials are characterized by high mechanical and tribological properties. The surface treatment of the composite by an electron beam in inert gas plasma leads to a qualitative and quantitative change in its microstructure as well as to a change in mechanical properties of the components: a columnar structure forms in the modified layer. Different treatment regimes result in different concentrations of inclusions in the surface layer. In this paper, the effect of the volume concentration of inclusions on the integral mechanical properties of a dispersion-strengthened NiCr-TiC composite is studied on the basis of 3D numerical simulation. The results of computer simulation show that the change in concentration significantly affects the integral mechanical characteristics of the composite material as well as the nature of the nucleation and development of damages in it.
Effect of substrate temperature on the optical parameters of thermally evaporated Ge-Se-Te thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Pankaj, E-mail: pks_phy@yahoo.co.i [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India); Katyal, S.C. [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India)

2009-05-01

Thin films of Ge{sub 10}Se{sub 90-x}Te{sub x} (x = 0, 10, 20, 30, 40, 50) glassy alloys were deposited at three substrate temperatures (303 K, 363 K and 423 K) using conventional thermal evaporation technique at base pressure of {approx} 10{sup -4} Pa. X-ray diffraction results show that films deposited at 303 K are of amorphous nature while films deposited at 363 K and 423 K are of polycrystalline nature. The optical parameters, refractive index and optical gap have been derived from the transmission spectra (using UV-Vis-NIR spectrophotometer) of the thin films in the spectral region 400-1500 nm. This has been observed that refractive index values remain almost constant while the optical gap is found to decrease considerably with the increase of substrate temperature. The decrease in optical gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of substrate temperature. The optical gap has also been observed to decrease with the increase of Te content.
Preparation and electrical characterization of the compound CuAgGeSe{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Villarreal, M A; Chalbaud, L M de; Fernandez, B J; Velasquez-Velasquez, A; Pirela, M, E-mail: mavu@ula.v, E-mail: clio@ula.v [Laboratorio de Temperaturas Bajas, Centro de Estudios en Semiconductores, Departamento de Fisica, Universidad de Los Andes, Apartado de Correos No 1, La Hechicera, Merida 5251 (Venezuela, Bolivarian Republic of)

2009-05-01

This work reports the synthesis and electrical characterization of the compound CuAgGeSe{sub 3}. This material was synthesized by direct melting of the constituent elements, in their stoiochiometric ratio inside an evacuated quartz ampoule. The chemical analysis (EDX) confirmed the 1:1:1:3 stoichiometric ratios for the compound. The differential thermal analysis showed the existence of a principal phase that melts at 558 deg. C and a second phase at 636{sup 0}C. The X-ray powder diffraction analysis indicated that the compound crystallizes in the monoclinic system, space group Cc, with unit cell parameters: a = 6.776(0) A, b = 11.901(5) A, c = 6.772(0) and beta = 108.2(0){sup 0}. The study of the electrical properties was realized in the temperature range from 80 to 300 K and under a magnetic field of 14 kG. Employing the Mott transition model, we were able to obtain the temperature dependence of the resistivity and we estimated that the activation energy is 25.3 meV in the low temperatures region. The mobility temperature dependence is analyzed by taking into account the scattering of charge carriers by acoustic phonons, polar optic phonons and thermally activated hopping. From the analysis, the activation energy is estimated to be around 38 meV and the characteristic temperature of the phonons is estimated to be around 400 K.
Comparative study of GeO{sub 2}/Ge and SiO{sub 2}/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Mori, Daichi; Kawai, Kentaro; Morita, Mizuho; Arima, Kenta, E-mail: arima@prec.eng.osaka-u.ac.jp [Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871 (Japan); Oka, Hiroshi; Hosoi, Takuji; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871 (Japan); Crumlin, Ethan J.; Liu, Zhi [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2016-09-07

The energy difference between the oxide and bulk peaks in X-ray photoelectron spectroscopy (XPS) spectra was investigated for both GeO{sub 2}/Ge and SiO{sub 2}/Si structures with thickness-controlled water films. This was achieved by obtaining XPS spectra at various values of relative humidity (RH) of up to ∼15%. The increase in the energy shift is more significant for thermal GeO{sub 2} on Ge than for thermal SiO{sub 2} on Si above ∼10{sup −4}% RH, which is due to the larger amount of water molecules that infiltrate into the GeO{sub 2} film to form hydroxyls. Analyzing the origins of this energy shift, we propose that the positive charging of a partially hydroxylated GeO{sub 2} film, which is unrelated to X-ray irradiation, causes the larger energy shift for GeO{sub 2}/Ge than for SiO{sub 2}/Si. A possible microscopic mechanism of this intrinsic positive charging is the emission of electrons from adsorbed water species in the suboxide layer of the GeO{sub 2} film to the Ge bulk, leaving immobile cations or positively charged states in the oxide. This may be related to the reported negative shift of flat band voltages in metal-oxide-semiconductor diodes with an air-exposed GeO{sub 2} layer.
Determination of the proton spin structure functions for 0.05 GeV2 using CLAS

Science.gov (United States)

Fersch, R. G.; Guler, N.; Bosted, P.; Deur, A.; Griffioen, K.; Keith, C.; Kuhn, S. E.; Minehart, R.; Prok, Y.; Adhikari, K. P.; Adhikari, S.; Akbar, Z.; Amaryan, M. J.; Anefalos Pereira, S.; Asryan, G.; Avakian, H.; Ball, J.; Balossino, I.; Baltzell, N. A.; Battaglieri, M.; Bedlinskiy, I.; Biselli, A. S.; Briscoe, W. J.; Brooks, W. K.; Bültmann, S.; Burkert, V. D.; Thanh Cao, Frank; Carman, D. S.; Careccia, S.; Celentano, A.; Chandavar, S.; Charles, G.; Chetry, T.; Ciullo, G.; Clark, L.; Colaneri, L.; Cole, P. L.; Compton, N.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Djalali, C.; Dodge, G. E.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fanchini, E.; Fedotov, G.; Filippi, A.; Fleming, J. A.; Forest, T. A.; Garçon, M.; Gavalian, G.; Ghandilyan, Y.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Gleason, C.; Golovatch, E.; Gothe, R. W.; Guidal, M.; Guo, L.; Hafidi, K.; Hakobyan, H.; Hanretty, C.; Harrison, N.; Hattawy, M.; Heddle, D.; Hicks, K.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Jenkins, D.; Joo, K.; Keller, D.; Khachatryan, G.; Khachatryan, M.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F. J.; Kubarovsky, V.; Lagerquist, V. G.; Lanza, L.; Lenisa, P.; Livingston, K.; Lu, H. Y.; McKinnon, B.; Meyer, C. A.; Mirazita, M.; Mokeev, V.; Montgomery, R. A.; Movsisyan, A.; Munoz Camacho, C.; Murdoch, G.; Nadel-Turonski, P.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Osipenko, M.; Ostrovidov, A. I.; Paolone, M.; Paremuzyan, R.; Park, K.; Pasyuk, E.; Phelps, W.; Pierce, J.; Pisano, S.; Pogorelko, O.; Price, J. W.; Protopopescu, D.; Raue, B. A.; Ripani, M.; Riser, D.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatié, F.; Salgado, C.; Schumacher, R. A.; Sharabian, Y. G.; Simonyan, A.; Skorodumina, Iu.; Smith, G. D.; Sokhan, D.; Sparveris, N.; Stankovic, I.; Stepanyan, S.; Strakovsky, I. I.; Strauch, S.; Taiuti, M.; Tian, Ye; Torayev, B.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Weinstein, L. B.; Zachariou, N.; Zhang, J.; CLAS Collaboration

2017-12-01

We present the results of our final analysis of the full data set of g1p(Q2) , the spin structure function of the proton, collected using CLAS at Jefferson Laboratory in 2000-2001. Polarized electrons with energies of 1.6, 2.5, 4.2, and 5.7 GeV were scattered from proton targets (NH153 dynamically polarized along the beam direction) and detected with CLAS. From the measured double spin asymmetries, we extracted virtual photon asymmetries A1p and A2p and spin structure functions g1p and g2p over a wide kinematic range (0.05 GeV2GeV2 and 1.08 GeV GeV) and calculated moments of g1p. We compare our final results with various theoretical models and expectations, as well as with parametrizations of the world data. Our data, with their precision and dense kinematic coverage, are able to constrain fits of polarized parton distributions, test pQCD predictions for quark polarizations at large x , offer a better understanding of quark-hadron duality, and provide more precise values of higher twist matrix elements in the framework of the operator product expansion.

Structural and electronic properties of Si{sub 1–x}Ge{sub x} alloy nanowires

Energy Technology Data Exchange (ETDEWEB)

Iori, Federico [Dipartimento di Scienze e Metodi dell' Ingegneria, Centro Interdipartimentale Intermech and En and tech, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); European Theoretical Spectroscopy Facility (ETSF) and Institut de Ciència de Materials de Barcelona (ICMAB–CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain); Ossicini, Stefano [Dipartimento di Scienze e Metodi dell' Ingegneria, Centro Interdipartimentale Intermech and En and tech, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); “Centro S3”, CNR-Istituto di Nanoscienze, Via Campi 213/A, 41125 Modena (Italy); Rurali, Riccardo, E-mail: rrurali@icmab.es [Institut de Ciència de Materials de Barcelona (ICMAB–CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain)

2014-10-21

We present first-principles density-functional calculations of Si{sub 1–x}Ge{sub x} alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a pure Ge nanowire of the same diameter. The same holds, to some extent, also for electronic properties such as the band-gap. We also assess to what extend the band-gap varies as a function of disorder, i.e., how it changes for different random realization of a given concentration. These results make possible to tailor the desired properties of SiGe alloy nanowires starting directly from the data relative to the pristine wires.
Nano-structured Cu(In,Al)Se{sub 2} near-infrared photodetectors

Energy Technology Data Exchange (ETDEWEB)

Chang, Ruo-Ping [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

2013-02-01

We have demonstrated nano-structured Cu(In,Al)Se{sub 2} (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al–CIAS–Al metal–semiconductor–metal structure and vertical structure with CIAS/ZnSe NWs annular p–n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p–n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm. - Highlights: ► We demonstrate nano-structured Cu(In,Al)Se{sub 2} near-infrared photodetectors. ► Photodetectors were fabricated on ZnO nanowires/ZnO/Mo/ITO glass substrate. ► Two detection schemes studied: a plain MSM structure and a vertical structure. ► Photocurrent amplification for the vertical structure is two orders of magnitude. ► Photocurrent amplification for the MSM structure is one order of magnitude.
Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O3 layer

International Nuclear Information System (INIS)

Paleari, S.; Molle, A.; Accetta, F.; Lamperti, A.; Cianci, E.; Fanciulli, M.

2014-01-01

The electrical activity of Ge dangling bonds is investigated at the interface between GeO 2 -passivated Ge(1 1 1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al 2 O 3 /GeO 2 /Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices ( 10 cm −2 ). In particular, it is shown that capping the GeO 2 -passivated Ge(1 1 1) with Al 2 O 3 has no impact on the microstructure of the Ge dangling bond.
Scales of columnar jointing in igneous rocks: field measurements and controlling factors

Science.gov (United States)

Hetényi, György; Taisne, Benoît; Garel, Fanny; Médard, Étienne; Bosshard, Sonja; Mattsson, Hannes B.

2012-03-01

Columnar jointing is a common feature of solidified lavas, sills and dikes, but the factors controlling the characteristic stoutness of columns remain debated, and quantitative field observations are few in number. In this paper, we provide quantitative measurements on sizing of columnar joint sets and our assessment of the principal factors controlling it. We focus on (1) chemistry, as it is the major determinant of the physical (mechanical and thermal) properties of the lava, and (2) geology, as it influences the style of emplacement and lava geometry, setting boundary conditions for the cooling process and the rate of heat loss. In our analysis, we cover lavas with a broad range of chemical compositions (from basanite to phonolite, for six of which we provide new geochemical analyses) and of geological settings. Our field measurements cover 50 columnar jointing sites in three countries. We provide reliable, manually digitized data on the size of individual columns and focus the mathematical analysis on their geometry (23,889 data on side length, of which 17,312 are from full column sections and 3,033 data on cross-sectional area and order of polygonality). The geometrical observations show that the variation in characteristic size of columns between different sites exceeds one order of magnitude (side length ranging from 8 to 338 cm) and that the column-bounding polygons' average order is less than 6. The network of fractures is found to be longer than required by a minimum-energy hexagonal configuration, indicating a non-equilibrium, geologically quick process. In terms of the development and characteristic sizing of columnar joint sets, our observations suggest that columns are the result of an interplay between the geological setting of emplacement and magma chemistry. When the geological setting constrains the geometry of the emplaced body, it exerts a stronger control on characteristic column stoutness. At unconstrained geometries (e.g. unconfined lava
CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

International Nuclear Information System (INIS)

Sedova, I. V.; Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

2007-01-01

A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is Δa/a ∼ 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 ± 1.5 nm). In the photoluminescence spectra, a noticeable (∼150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs
Development of a reproducible challenge model to investigate the virulence of Flavobacterium columnare genomovars in rainbow trout Oncorhynchus mykiss (Walbaum)

Science.gov (United States)

Flavobacterium columnare is a Gram-negative bacterium that causes columnaris disease and has significant economic impacts on aquaculture production worldwide. Molecular analyses have demonstrated that there is genetic diversity among F. columnare isolates. A review of the published literature that...
Structural and electrical evaluation for strained Si/SiGe on insulator

International Nuclear Information System (INIS)

Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

2006-01-01

Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed
Quantum depinning of flux lines from columnar defects

International Nuclear Information System (INIS)

Chudnovsky, E.M.; Ferrera, A.; Vilenkin, A.

1995-01-01

The depinning of a flux line from a columnar defect is studied within the path-integral approach. Instantons of the quantum field theory in 1+1 dimensions are computed for the flux line whose dynamics is dominated by the Magnus force. The universal temperature dependence of the decay rate in the proximity of the critical current is obtained. This problem provides an example of macroscopic quantum tunneling, which is accessible to the direct comparison between theory and experiment
Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Kocak, B.; Ciftci, Y.O., E-mail: yasemin@gazi.edu.tr

2016-05-15

Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.
Vortex Matter dynamics in a thin film of Nb with columnar indentations

Energy Technology Data Exchange (ETDEWEB)

Nunes, J.S. [Grupo de Supercondutividade e Magnetism, Departamento de Fisica, Universidade Federal de Sao Carlos, Sao Carlos, SP (Brazil)], E-mail: julianakapp@gmail.com; Zadorosny, R.; Oliveira, A.A.M. [Grupo de Supercondutividade e Magnetism, Departamento de Fisica, Universidade Federal de Sao Carlos, Sao Carlos, SP (Brazil); Lepienski, C.M. [Departamento de Fisica, Universidade Federal do Parana, Curitiba, PR (Brazil); Patino, E.J.; Blamire, M.G. [Department of Materials Science, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Ortiz, W.A. [Grupo de Supercondutividade e Magnetism, Departamento de Fisica, Universidade Federal de Sao Carlos, Sao Carlos, SP (Brazil)

2008-07-15

A superconducting film with columnar defects constitutes a rich scenario for studying Vortex Matter dynamics. This paper reports on the magnetic response of a 200 nm thick Nb film, pierced with a set of 900 columnar indentations of nearly triangular cross section, forming a square lattice. The column diameter is 1 {mu}m and the distance between columns is 10 {mu}m. To probe the interaction of Vortex Matter with the array of antidots, we have excited the sample with a significantly large AC-field, so that flux originally trapped by the columns could be unpinned and admitted into the superconducting sea surrounding the defects. The melting line of this system has a kink separating two different regimes, suggesting a crossover from the efficient pinning regime, at lower temperatures, to a temperature-induced depinning.
Vortex Matter dynamics in a thin film of Nb with columnar indentations

International Nuclear Information System (INIS)

Nunes, J.S.; Zadorosny, R.; Oliveira, A.A.M.; Lepienski, C.M.; Patino, E.J.; Blamire, M.G.; Ortiz, W.A.

2008-01-01

A superconducting film with columnar defects constitutes a rich scenario for studying Vortex Matter dynamics. This paper reports on the magnetic response of a 200 nm thick Nb film, pierced with a set of 900 columnar indentations of nearly triangular cross section, forming a square lattice. The column diameter is 1 μm and the distance between columns is 10 μm. To probe the interaction of Vortex Matter with the array of antidots, we have excited the sample with a significantly large AC-field, so that flux originally trapped by the columns could be unpinned and admitted into the superconducting sea surrounding the defects. The melting line of this system has a kink separating two different regimes, suggesting a crossover from the efficient pinning regime, at lower temperatures, to a temperature-induced depinning
Structural properties of templated Ge quantum dot arrays: impact of growth and pre-pattern parameters.

Science.gov (United States)

Tempeler, J; Danylyuk, S; Brose, S; Loosen, P; Juschkin, L

2018-07-06

In this study we analyze the impact of process and growth parameters on the structural properties of germanium (Ge) quantum dot (QD) arrays. The arrays were deposited by molecular-beam epitaxy on pre-patterned silicon (Si) substrates. Periodic arrays of pits with diameters between 120 and 20 nm and pitches ranging from 200 nm down to 40 nm were etched into the substrate prior to growth. The structural perfection of the two-dimensional QD arrays was evaluated based on SEM images. The impact of two processing steps on the directed self-assembly of Ge QD arrays is investigated. First, a thin Si buffer layer grown on a pre-patterned substrate reshapes the pre-pattern pits and determines the nucleation and initial shape of the QDs. Subsequently, the deposition parameters of the Ge define the overall shape and uniformity of the QDs. In particular, the growth temperature and the deposition rate are relevant and need to be optimized according to the design of the pre-pattern. Applying this knowledge, we are able to fabricate regular arrays of pyramid shaped QDs with dot densities up to 7.2 × 10 10 cm -2 .
Single crystal growth and structure refinements of CsMxTe2-xO6 (M = Al, Ga, Ge, In) pyrochlores

International Nuclear Information System (INIS)

Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

2011-01-01

Graphical abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown and structure refinements indicate deviations from ideal stoichiometry presumably related to mixed valency of tellurium. Highlights: → Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown. → Structure refinements from single crystal X-ray diffraction data confirm e structure. → Deviations from ideal stoichiometry suggest mixed valency of tellurium and hence conductivity. -- Abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown from a TeO 2 flux. Structure refinements from single crystal X-ray diffraction data are reported. These results are used to discuss deviations from ideal stoichiometry that result in electronic conductivity presumably related to mixed valency of tellurium.
Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

Science.gov (United States)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

2015-05-01

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.
Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

International Nuclear Information System (INIS)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

2015-01-01

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement
Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

Energy Technology Data Exchange (ETDEWEB)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Strachan, Alejandro, E-mail: strachan@purdue.edu [School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

2015-05-07

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.
Revision of the Ge–Ti phase diagram and structural stability of the new phase Ge{sub 4}Ti{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Bittner, Roland W. [University of Vienna, Department of Inorganic Chemistry/Materials Chemistry, Währingerstraße 42, 1090 Wien (Austria); Colinet, Catherine [Science et Ingénierie des Matériaux et Procédés, Grenoble INP, UJF, CNRS, 38402 Saint Martin d’Hères Cedex (France); Tedenac, Jean-Claude [Institut de Chimie Moléculaire et des Matériaux I.C.G., UMR-CNRS 5253, Université Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex 5 (France); Richter, Klaus W., E-mail: klaus.richter@univie.ac.at [University of Vienna, Department of Inorganic Chemistry/Materials Chemistry, Währingerstraße 42, 1090 Wien (Austria)

2013-11-15

Highlights: •New compound Ge{sub 4}Ti{sub 5} found by experiments and by DFT ground state calculations. •Enthalpies of formation calculated for different Ge–Ti compounds. •Modifications of the Ge–Ti phase diagram suggested. -- Abstract: The binary phase diagram Ge–Ti was investigated experimentally by powder X-ray diffraction, scanning electron microscopy including EDX analysis, and differential thermal analysis. Total energies of the compounds GeTi{sub 3}, GeTi{sub 2}, Ge{sub 3}Ti{sub 5}, Ge{sub 4}Ti{sub 5}, Ge{sub 5}Ti{sub 6}, GeTi and Ge{sub 2}Ti were calculated for various structure types employing electronic density-functional theory (DFT). Experimental studies as well as electronic calculations show the existence of a new phase Ge{sub 4}Ti{sub 5} (Ge{sub 4}Sm{sub 5}-type, oP36, Pnma) which is formed in a solid state reaction Ge{sub 3}Ti{sub 5} + Ge{sub 5}Ti{sub 6} = Ge{sub 4}Ti{sub 5}. In addition, a significant homogeneity range was observed for the compound Ge{sub 3}Ti{sub 5} and the composition of the liquid phase in the eutectic reaction L = Ge + Ge{sub 2}Ti was found to be at significant higher Ge-content (97.5 at.% Ge) than reported in previous studies. Based on these new results, a modified phase diagram Ge–Ti is suggested. The zero-temperature lattice parameters and the formation enthalpies determined by DTF calculations were found to be in good agreement with experimental data.
Effects of hydrogenation on magnetism of UNiGe

Energy Technology Data Exchange (ETDEWEB)

Adamska, A.M., E-mail: anna@mag.mff.cuni.cz [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Cracow (Poland); Havela, L. [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Prochazka, J. [Faculty of Sports and Physical Education, Charles University, Jose Martiho 31, 16252, Prague 6 (Czech Republic); Andreev, A.V. [Institute of Physics, Academy of Sciences, Na Slovance 2, 18221 Prague (Czech Republic); Skourski, Y. [Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany)

2011-12-15

U-based intermetallic compound UNiGe absorbs hydrogen up to the stoichiometry UNiGeH{sub 1.2}. In analogy to other compounds with the TiNiSi-type of structure, the structure is modified into hexagonal. The zig-zag U-chains are stretched, the U-U spacing is largely enhanced and the ordering temperature increases up to 100 K. The ordered state has a spontaneous moment, but it is unlikely to be a simple ferromagnet. - Highlights: > UNiGe exhibits a variety of magnetic properties. > Hydrogenation modifies the crystal, electronic structure, and the magnetic properties. > Upon hydrogenation, the crystal symmetry of UNiGe increases from orthorhombic to hexagonal. > Magnetic ordering temperature of UNiGe (T{sub N}=44 K) is double in the hydride, possible second phase transition.
Chemical and structural evolution in the Th-SeO3(2-)/SeO4(2-) system: from simple selenites to cluster-based selenate compounds.

Science.gov (United States)

Xiao, Bin; Langer, Eike; Dellen, Jakob; Schlenz, Hartmut; Bosbach, Dirk; Suleimanov, Evgeny V; Alekseev, Evgeny V

2015-03-16

While extensive success has been gained in the structural chemistry of the U-Se system, the synthesis and characterization of Th-based Se structures are widely unexplored. Here, four new Th-Se compounds, α-Th(SeO3)2, β-Th(SeO3)2, Th(Se2O5)2, and Th3O2(OH)2(SeO4)3, have been obtained from mild hydrothermal or low-temperature (180-220 °C) flux conditions and were subsequently structurally and spectroscopically characterized. The crystal structures of α-Th(SeO3)2 and β-Th(SeO3)2 are based on ThO8 and SeO3 polyhedra, respectively, featuring a three-dimensional (3D) network with selenite anions filling in the Th channels along the a axis. Th(Se2O5)2 is a 3D framework composed of isolated ThO8 polyhedra interconnected by [Se2O5](2-) dimers. Th3O2(OH)2(SeO4)3 is also a 3D framework constructed by octahedral hexathorium clusters [Th6(μ3-O)4(μ3-OH)4](12+), which are interlinked by selenate groups SeO4(2-). The positions of the vibrational modes associated with both Se(IV)O3(2-) and Se(VI)O4(2-) units, respectively, were determined for four compounds, and the Raman spectra of α- and β-Th(SeO3)2 are compared and discussed in detail.
Thermal transport property of Ge34 and d-Ge investigated by molecular dynamics and the Slack's equation

International Nuclear Information System (INIS)

Han-Fu, Wang; Wei-Guo, Chu; Yan-Jun, Guo; Hao, Jin

2010-01-01

In this study, we evaluate the values of lattice thermal conductivity κ L of type II Ge clathrate (Ge 34 ) and diamond phase Ge crystal (d-Ge) with the equilibrium molecular dynamics (EMD) method and the Slack's equation. The key parameters of the Slack's equation are derived from the thermodynamic properties obtained from the lattice dynamics (LD) calculations. The empirical Tersoff's potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack's equation are consistent with the EMD results above 250 K for both Ge 34 and d-Ge. In a temperature range of 200–1000 K, the κ L value of d-Ge is about several times larger than that of Ge 34 . (condensed matter: structure, thermal and mechanical properties)

Structural, elastic, and electronic properties of new 211 MAX phase Nb{sub 2}GeC from first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Shein, I.R. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg 620990 (Russian Federation); Ivanovskii, A.L., E-mail: ivanovskii@ihim.uran.ru [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg 620990 (Russian Federation)

2013-02-01

Very recently (2012, Phys. Rev Lett., 109, 035502) a new hexagonal (s.g. P63/mmc, Music-Sharp-Sign 194) ternary phase Nb{sub 2}GeC, which belongs to so-called 211-like MAX phases, was discovered. In order to get a systematic insight into the structural, elastic, and electronic properties of Nb{sub 2}GeC, we used two complementary DFT-based first-principles approaches (as implemented in the VASP and Wien2k packages) to calculate the optimized structural parameters, band structure, densities of state, Fermi surface, and a set of elastic parameters: elastic constants (C{sub ij}), bulk modulus (B), compressibility ({beta}), shear modulus (G), Young's modulus (Y), and elastic anisotropy indexes, which were discussed in comparison with available data. Besides, the inter-atomic bonding picture for Nb{sub 2}GeC was discussed using electron density maps and Bader's charge analysis.
CONCENTRACIÓN DE Ge, As y Hg EN CARBONES DEL NOROESTE DE VENEZUELA

Directory of Open Access Journals (Sweden)

Arnoldo González

2011-01-01

Full Text Available Se determinó la concentración de Ge, As y Hg en muestras de carbones venezolanos provenientes de los estados Falcón y Lara, aplicándose un procedimiento de preconcentración para la detección de Ge y As y detección mediante ET AAS. El Hg fue determinado mediante CV AFS. La exactitud y precisión de las metodologías de análisis fue evaluada empleando el material certificado de referencia SARM-19. Los contenidos promedios determinados, 0,2, 2,7 y 0,18 μg g-1 para Ge, As y Hg respectivamente, indican que los carbones analizados no se encuentran enriquecidos con Ge, y que su empleo como fuente de energía generaría un bajo impacto ambiental, de acuerdo a las emisiones de As y Hg. Asimismo, se encontró que el contenido de As disminuye en el carbón de acuerdo al nivel de madurez, siguiendo el orden: turba > lignito >bituminoso > antracita.
Influence of columnar defects on the thermodynamic properties of BSCCO

Science.gov (United States)

van der Beek, C. J.; Indenbom, M. V.; Berseth, V.; Konczykowski, M.; Li, T. W.; Kes, P. H.; Benoit, W.

1996-03-01

Amorphous columnar defects strongly affect the reversible magnetization of Bi2Sr2CaCu2O8+δ single crystals both in the vortex solid, where the change reflects the change in vortex energy due to pinning, and in the vortex liquid, where the randomly positioned columns disrupt the interaction between superconducting fluctuations.
Behaviors of Deformation, Recrystallization and Textures Evolution of Columnar Grains in 3%Si Electrical Steel Slabs

Directory of Open Access Journals (Sweden)

SHAO Yuan-yuan

2017-11-01

Full Text Available The behaviors of deformation and recrystallization and textures evolution of 3% (mass fraction Si columnar-grained electrical steel slabs were investigated by electron backscatter diffractometer technique and X-ray diffraction. The results indicate that the three columnar-grained samples have different initial textures with the long axes arranged along rolling, transverse and normal directions. Three shear orientations can be obtained in surface layer after hot rolling, of which Goss orientation is formed easily. The α and γ fibre rolling orientations are obtained in RD sample, while strong γ fibre orientations in TD sample and sharp {100} orientations in ND sample are developed respectively. In addition, cube orientation can be found in all the three samples. The characteristics of hot rolled orientations in center region reveal distinct dependence on initial columnar-grained orientations. Strong {111}〈112〉 orientation in RD and TD samples separately comes from Goss orientation of hot rolled sheets, and sharp rotated cube orientation in ND sample originates from the initial {100} orientation of hot rolled sheets after cold rolling. Influenced by initial deviated orientations and coarse grain size, large orientation gradient of rotated cube oriented grain can be observed in ND sample. The coarse {100} orientated grains of center region in the annealed sheets show the heredity of the initial columnar-grained orientations.
A supramolecular ''Double-cable'' structure with a 129{sub 44} helix in a columnar porphyrin-C{sub 60} dyad and its application in polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Chien-Lung [College of Polymer Science and Polymer Engineering, The University of Akron, Akron, OH (United States); Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan (China); Zhang, Wen-Bin; Sun, Hao-Jan; Van Horn, Ryan M.; Kulkarni, Rahul R.; Tsai, Chi-Chun; Gong, Xiong; Cheng, Stephen Z.D. [College of Polymer Science and Polymer Engineering, The University of Akron, Akron, OH (United States); Hsu, Chain-Shu [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan (China); Lotz, Bernard [Institut Charles Sadron, Strasbourg (France)

2012-11-15

A novel porphyrin-C{sub 60} dyad (PCD1) is designed and synthesized to investigate and manipulate the supramolecular structure where geometrically isotropic [such as [60]fullerene (C{sub 60})] and anisotropic [such as porphyrin (Por)] units coexist. It is observed that PCD1 possesses an enantiomeric phase behavior. The melting temperature of the stable PCD1 thermotropic phase is 160 C with a latent heat ({Delta}H) of 18.5 kJ mol{sup -1}. The phase formation is majorly driven by the cooperative intermolecular Por-Por and C{sub 60}-C{sub 60} interactions. Structural analysis reveals that this stable phase possesses a supramolecular ''double-cable'' structure with one p-type Por core columnar channel and three helical n-type C{sub 60} peripheral channels. These ''double-cable'' columns further pack into a hexagonal lattice with a = b = 4.65 nm, c = 41.3 nm, {alpha} = {beta} = 90 , and {gamma} = 120 . The column repeat unit is determined to possess a 129{sub 44} helix. With both donor (D; Pro) and acceptor (A; C{sub 60}) units having their own connecting channels as well as the large D/A interface within the supramolecular ''double-cable'' structure, PCD1 has photogenerated carriers with longer lifetimes compared to the conventional electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester. A phase-separated columnar morphology is observed in a bulk-heterojunction (BHJ) material made by the physical blend of a low band-gap conjugated polymer, poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothia-diazole)] (PCPDTBT), and PCD1. With a specific phase structure in the solid state and in the blend, PCD1 is shown to be a promising candidate as a new electron acceptor in high performance BHJ polymer solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Crystal structure of HgGa{sub 2}Se{sub 4} under compression

Energy Technology Data Exchange (ETDEWEB)

Gomis, Oscar, E-mail: osgohi@fis.upv.es [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Vilaplana, Rosario [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Manjón, Francisco Javier [Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Santamaría-Pérez, David [Departamento de Química Física I, Universidad Complutense de Madrid, MALTA Consolider Team, Avenida Complutense s/n, 28040 Madrid (Spain); Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia (Spain); Errandonea, Daniel [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia (Spain); and others

2013-06-01

Highlights: ► Single crystals of HgGa{sub 2}Se{sub 4} with defect-chalcopyrite structure were synthesized. ► HgGa{sub 2}Se{sub 4} exhibits a phase transition to a disordered rock salt structure at 17 GPa. ► HgGa{sub 2}Se{sub 4} undergoes a phase transition below 2.1 GPa to a disordered zinc blende. - Abstract: We report on high-pressure x-ray diffraction measurements up to 17.2 GPa in mercury digallium selenide (HgGa{sub 2}Se{sub 4}). The equation of state and the axial compressibilities for the low-pressure tetragonal phase have been determined and compared to related compounds. HgGa{sub 2}Se{sub 4} exhibits a phase transition on upstroke toward a disordered rock-salt structure beyond 17 GPa, while on downstroke it undergoes a phase transition below 2.1 GPa to a phase that could be assigned to a metastable zinc-blende structure with a total cation-vacancy disorder. Thermal annealing at low- and high-pressure shows that kinetics plays an important role on pressure-driven transitions.
Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

International Nuclear Information System (INIS)

Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

2013-01-01

The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)
XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

International Nuclear Information System (INIS)

Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

2005-01-01

Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments
Phase stabilities of pyrite-related MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te): A systematic DFT study

International Nuclear Information System (INIS)

Bachhuber, Frederik; Krach, Alexander; Furtner, Andrea; Söhnel, Tilo; Peter, Philipp; Rothballer, Jan; Weihrich, Richard

2015-01-01

Pyrite-type and related systems appear for a wide range of binary and ternary combinations of transition metals and main group elements that form Zintl type dumbbell anion units. Those representatives with 20 valence electrons exhibit an extraordinary structural flexibility and interesting properties as low-gap semiconductors or thermoelectric and electrode materials. This work is devoted to the systematic exploration of novel compounds within the class of MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te) by means of density functional calculations. Their preferred structures are predicted from an extended scheme of colored pyrites and marcasites. To determine their stabilities, competing binary MT 2 and MCh 2 boundary phases are taken into account as well as ternary M 3 T 2 Ch 2 and M 2 T 3 Ch 3 systems. Recently established stability diagrams are presented to account for MTCh ordering phenomena with a focus on a not-yet-reported ordering variant of the NiAs 2 type. Due to the good agreement with experimental data available for several PtTCh systems, the predictions for the residual systems are considered sufficiently accurate. - Graphical abstract: Compositional and structural stability of MTCh compounds is investigated from first principle calculations. A conceptional approach is presented to study and predict novel stable and metastable compounds and structures of low gap semiconductors with TCh dumbbell units that are isoelectronic and structurally related to pyrite (FeS 2 ). - Highlights: • Study of compositional stability of MTCh vs. M 3 T 2 Ch 2 and M 2 T 3 Ch 3 compounds. • Study of structural stability of known and novel MTCh compounds. • Prediction of novel stable and metastable structures and compounds isoelectronic to pyrite, FeS 2
Band alignment in ZnSe/Zn1-x-yCdxMnySe quantum-well structures

International Nuclear Information System (INIS)

Yu, W.Y.; Salib, M.S.; Petrou, A.; Jonker, B.T.; Warnock, J.

1997-01-01

We present a magneto-optical study of ZnSe/Zn 1-x-y Cd x Mn y Se quantum-well structures in which a suitable choice of the Cd composition leads to a system that is type I at zero magnetic field. When a magnetic field is applied perpendicular to the layers of the structure, the band edges split in such a way as to make the upper σ - (1/2, t 3/2) exciton transition type II, while the ground state σ + (-1/2, -3/2) exciton component remains type I at all field values. This alignment reduces the probability for carrier relaxation from the higher-energy exciton component and opens the possibility of hole-spin population inversion via optical pumping. copyright 1997 The American Physical Society
Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

International Nuclear Information System (INIS)

Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

2004-01-01

Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix
Local structure of liquid Ge{sub 1}Sb{sub 2}Te{sub 4} for rewritable data storage use

Energy Technology Data Exchange (ETDEWEB)

Sun Zhimei; Zhou Jian [Department of Materials Science and Engineering, College of Materials, Xiamen University, 361005 (China); Blomqvist, Andreas; Ahuja, Rajeev [Division for Materials Theory, Department of Physics and Materials Science, Uppsala University, Box 530, SE-751 21, Uppsala (Sweden); Xu Lihua [Department of Inorganic Non-metallic Materials Science, School of Materials and Engineering, University of Science and Technology Beijing, 100083 (China)], E-mail: zhmsun2@yahoo.com, E-mail: zmsun@xmu.edu.cn

2008-05-21

Phase-change materials based on chalcogenide alloys have been widely used for optical data storage and are promising materials for nonvolatile electrical memory use. However, the mechanism behind the utilization is unclear as yet. Since the rewritable data storage involved an extremely fast laser melt-quenched process for chalcogenide alloys, the liquid structure of which is one key to investigating the mechanism of the fast reversible phase transition and hence rewritable data storage, here by means of ab initio molecular dynamics we have studied the local structure of liquid Ge{sub 1}Sb{sub 2}Te{sub 4}. The results show that the liquid structure gives a picture of most Sb atoms being octahedrally coordinated, and the coexistence of tetrahedral and fivefold coordination at octahedral sites for Ge atoms, while Te atoms are essentially fourfold and threefold coordinated at octahedral sites, as characterized by partial pair correlation functions and bond angle distributions. The local structure of liquid Ge{sub 1}Sb{sub 2}Te{sub 4} generally resembles that of the crystalline form, except for the much lower coordination number. It may be this unique liquid structure that results in the fast and reversible phase transition between crystalline and amorphous states.
Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Keisuke; Nakashima, Hiroshi, E-mail: nakasima@astec.kyushu-u.ac.jp [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Noguchi, Ryutaro; Wang, Dong [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Mitsuhara, Masatoshi; Nishida, Minoru [Department of Engineering Sciences for Electronics and Materials, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Hara, Toru [National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2015-09-21

Electrical and structural properties were investigated for group-4 transition-metal nitride contacts on Ge (TiN/Ge, ZrN/Ge, and HfN/Ge), which were prepared by direct sputter depositions using nitride targets. These contacts could alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. It was revealed that this phenomenon is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the nitride/Ge interfaces. The strength of FLP alleviation positively depended on the thickness of a-IL. TiN/Ge and ZrN/Ge contacts with ∼2 nm-thick a-ILs showed strong FLP alleviations with hole barrier heights (Φ{sub BP}) in the range of 0.52–56 eV, and a HfN/Ge contact with an ∼1 nm-thick a-IL showed a weaker one with a Φ{sub BP} of 0.39 eV. However, TaN/Ge contact without a-IL did not show such FLP alleviation. Based on the results of depth distributions for respective elements, we discussed the formation kinetics of a-ILs at TiN/Ge and ZrN/Ge interfaces. Finally, we proposed an interfacial dipole model to explain the FLP alleviation.
First-principles study on the structure and electronic property of gas molecules adsorption on Ge2Li2 monolayer

Science.gov (United States)

Hu, Yiwei; Long, Linbo; Mao, Yuliang; Zhong, Jianxin

2018-06-01

Using first-principles methods, we have studied the adsorption of gas molecules (CO2, CH4, H2S, H2 and NH3) on two dimensional Ge2Li2 monolayer. The adsorption geometries, adsorption energies, charge transfer, and band structures of above mentioned gas molecules adsorption on Ge2Li2 monolayer are analyzed. It is found that the adsorption of CO2 on Ge2Li2 monolayer is a kind of strong chemisorption, while other gas molecules such as CH4, H2S, H2 and NH3 are physisorption. The strong covalent binding is formed between the CO2 molecule and the nearest Ge atom in Ge2Li2 monolayer. This adsorption of CO2 molecule on Ge2Li2 monolayer leads to a direct energy gap of 0.304 eV. Other gas molecules exhibit mainly ionic binding to the nearest Li atoms in Ge2Li2 monolayer, which leads to indirect energy gap after adsorptions. Furthermore, it is found that the work function of Ge2Li2 monolayer is sensitive with the variation of adsorbents. Our results reveal that the Ge2Li2 monolayer can be used as a kind of nano device for gas molecules sensor.
CAFE simulation of columnar-to-equiaxed transition in Al-7wt%Si alloys directionally solidified under microgravity

Science.gov (United States)

Liu, D. R.; Mangelinck-Noël, N.; Gandin, Ch-A.; Zimmermann, G.; Sturz, L.; Nguyen Thi, H.; Billia, B.

2016-03-01

A two-dimensional multi-scale cellular automaton - finite element (CAFE) model is used to simulate grain structure evolution and microsegregation formation during solidification of refined Al-7wt%Si alloys under microgravity. The CAFE simulations are first qualitatively compared with the benchmark experimental data under microgravity. Qualitative agreement is obtained for the position of columnar to equiaxed transition (CET) and the CET transition mode (sharp or progressive). Further comparisons of the distributions of grain elongation factor and equivalent diameter are conducted and reveal a fair quantitative agreement.
C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

International Nuclear Information System (INIS)

Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

2008-01-01

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel
C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

2008-07-30

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.
Strain relaxation of germanium-tin (GeSn) fins

Science.gov (United States)

Kang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia

2018-02-01

Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patterning and dry etching. The strain in the Ge1-xSnx fins having fin widths (WFin) ranging from 1 μm down to 80 nm was characterized using micro-Raman spectroscopy. Raman measurements show that the strain relaxation increases with decreasing WFin. Finite element (FE) simulation shows that the strain component in the transverse direction relaxes with decreasing WFin, while the strain component along the fin direction remains unchanged. For various Ge1-xSnx fin widths, transverse strain relaxation was further extracted using micro-Raman spectroscopy, which is consistent with the simulation results.
Metamorphoses of electronic structure of FeSe-based superconductors (Review Article)

International Nuclear Information System (INIS)

Pustovit, Yu.V.; Kordyuk, A.A.

2016-01-01

The electronic structure of FeSe, the simplest iron-based superconductor (Fe-SC), conceals a potential of dramatic increase of Tc that realizes under pressure or in a single layer film. This is also the system where nematicity, the phenomenon of a keen current interest, is most easy to study since it is not accompanied by the antiferromagnetic transition like in all other Fe-SC. Here we overview recent experimental data on electronic structure of FeSe-based superconductors: isovalently doped crystals, intercalates, and single layer films, trying to clarify its topology and possible relation of this topology to superconductivity. We argue that the marked differences between the experimental and calculated band structures for all FeSe compounds can be described by a hoping selective renormalization model for a spin/orbital correlated state that may naturally ex-plain both the evolution of the band structure with temperature and nematicity.
Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

International Nuclear Information System (INIS)

Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

2000-01-01

The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

The Analysis Of Structure For The Multi-Layered Of Ge/TiO2 Films Prepared By The Differential Prressure Co-Sputtering

Directory of Open Access Journals (Sweden)

Adachi Y.

2015-06-01

Full Text Available We tried to fabricate the Ge/TiO2 composite films with the differential pressure (pumping co-sputtering (DPCS apparatus in order to improve the optical properties. In the study, the micro structure of these thin films has been evaluated. TEM image revealed that the thin film was alternately layered with TiO2 and Ge, lattice fringes were observed both of Ge layer and TiO2 layer. There were portions that lattice fringe of Ge was disturbed near the interface of Ge and TiO2. X-ray photoelectron spectroscopy elucidated that there were few germanium oxides and a part with the thin film after annealed.
Framework 'interstitial' oxygen in La10(GeO4)5-(GeO5)O2 apatite electrolyte

International Nuclear Information System (INIS)

Pramana, S.S.; White, T.J.

2007-01-01

Oxygen conduction at low temperatures in apatites make these materials potentially useful as electrolytes in solid-oxide fuel cells, but our understanding of the defect structures enabling ion migration is incomplete. While conduction along [001] channels is dominant, considerable inter-tunnel mobility has been recognized. Using neutron powder diffraction of stoichiometric 'La 10 (GeO 4 ) 6 O 3 ', it has been shown that this compound is more correctly described as an La 10 (GeO 4 ) 5- (GeO 5 )O 2 apatite, in which high concentrations of interstitial oxygen reside within the channel walls. It is suggested that these framework interstitial O atoms provide a reservoir of ions that can migrate into the conducting channels of apatite, via a mechanism of inter-tunnel oxygen diffusion that transiently converts GeO 4 tetrahedra to GeO 5 distorted trigonal bipyramids. This structural modification is consistent with known crystal chemistry and may occur generally in oxide apatites. (orig.)
The carbohydrate L-rhamnose promotes biofilm formation which enhances Flavobacterium columnare virulence

Science.gov (United States)

Flavobacterium columnare, the causative agent of columnaris disease causes substantial mortality worldwide in numerous freshwater finfish species. Due to its global significance and impact on the aquaculture industry, continual efforts to better understand basic mechanisms that contribute to disease...
Thin SiGe virtual substrates for Ge heterostructures integration on silicon

International Nuclear Information System (INIS)

Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

2014-01-01

The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach
A first-principles study on the structural, mechanical, electronic and optical properties of the Cr2(AlxGe1−x)C alloys

International Nuclear Information System (INIS)

Zhao-Yong, Jiao; Shu-Hong, Ma; Xiao-Fen, Huang

2014-01-01

Highlights: • The structural, mechanical and optical properties of Cr 2 (Al x Ge 1−x )C are studied. • The sound velocity and the Debye temperatures for the Cr 2 (Al x Ge 1−x )C are predicted. • Results classify the Cr 2 (Al x Ge 1−x )C (x ⩽ 0.5) as ductile while (x = 0.75, 1) as brittle. • Cr 2 (Al x Ge 1−x )C are predicted to be promising good coating materials. -- Abstract: According to the new experimentally discovered Cr 2 (Al x Ge 1−x )C (x = 0, 0.25, 0.5, 0.75, 1) alloys, we have studied the structural, mechanical, electronic and optical properties based on the first-principles calculation. Obtained structural parameters and distortion parameters are in good agreement with experimental results. It is shown that all the considered compounds are elastically stable and present results classify the Cr 2 (Al x Ge 1−x )C (x ⩽ 0.5) alloys as ductile while the Cr 2 (Al 0.75 Ge 0.25 )C and Cr 2 AlC as brittle. Electronic and optical properties demonstrate that all the considered M 2 AX compounds have a metallic character, and they are predictive of promising good coating materials
Colorimetric Method of Loop-Mediated Isothermal Amplification with the Pre-Addition of Calcein for Detecting Flavobacterium columnare and its Assessment in Tilapia Farms.

Science.gov (United States)

Suebsing, Rungkarn; Kampeera, Jantana; Sirithammajak, Sarawut; Withyachumnarnkul, Boonsirm; Turner, Warren; Kiatpathomchai, Wansika

2015-03-01

Flavobacterium columnare, the causative agent of columnaris disease in fish, affects many economically important freshwater fish species. A colorimetric method of loop-mediated isothermal amplification with the pre-addition of calcein (LAMP-calcein) was developed and used to detect the presence of F. columnare in farmed tilapia (Nile Tilapia Oreochromis niloticus and red tilapia [Nile Tilapia × Mozambique Tilapia O. mossambicus]) and rearing water. The detection method, based on a change in color from orange to green, could be performed within 45 min at 63°C. The method was highly specific, as it had no cross-detections with 14 other bacterial species, including other fish pathogens and two Flavobacterium species. The method has a minimum detection limit of 2.2 × 10(2) F. columnare CFU; thus, it is about 10 times more sensitive than conventional PCR. With this method, F. columnare was detected in gonad, gill, and blood samples from apparently healthy tilapia broodstock as well as in samples of fertilized eggs, newly hatched fry, and rearing water. The bacteria isolated from the blood were further characterized biochemically and found to be phenotypically identical to F. columnare. The amplified products from the LAMP-calcein method had 97% homology with the DNA sequence of F. columnare.
Improving the opto-microwave performance of SiGe/Si phototransistor through edge-illuminated structure

Science.gov (United States)

Tegegne, Z. G.; Viana, C.; Polleux, J. L.; Grzeskowiak, M.; Richalot, E.

2016-03-01

This paper demonstrates the experimental study of edge and top illuminated SiGe phototransistors (HPT) implemented using the existing industrial SiGe2RF Telefunken GmbH BiCMOS technology for opto-microwave (OM) applications using 850nm Multi-Mode Fibers (MMF). Its technology and structure are described. Two different optical window size HPTs with top illumination (5x5μm2, 10x10μm2) and an edge illuminated HPTs having 5μm x5μm size are presented and compared. A two-step post fabrication process was used to create an optical access on the edge of the HPT for lateral illumination with a lensed MMF through simple polishing and dicing techniques. We perform Opto-microwave Scanning Near-field Optical Microscopy (OM-SNOM) analysis on edge and top illuminated HPTs in order to observe the fastest and the highest sensitive regions of the HPTs. This analysis also allows understanding the parasitic effect from the substrate, and thus draws a conclusion on the design aspect of SiGe/Si HPT. A low frequency OM responsivity of 0.45A/W and a cutoff frequency, f-3dB, of 890MHz were measured for edge illuminated HPT. Compared to the top illuminated HPT of the same size, the edge illuminated HPT improves the f-3dB by a factor of more than two and also improves the low frequency responsivity by a factor of more than four. These results demonstrate that a simple etched HPT is still enough to achieve performance improvements compared to the top illuminated HPT without requiring a complex coupling structure. Indeed, it also proves the potential of edge coupled SiGe HPT in the ultra-low-cost silicon based optoelectronics circuits with a new approach of the optical packaging and system integration to 850nm MMF.
Crystal structure and transport properties of Pd5HgSe

Czech Academy of Sciences Publication Activity Database

Laufek, F.; Vymazalová, A.; Drábek, M.; Navrátil, Jiří; Plecháček, T.; Drahokoupil, Jan

2012-01-01

Roč. 14, č. 10 (2012), s. 1476-1479 ISSN 1293-2558 R&D Projects: GA ČR GAP108/10/1315 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : Pd5HgSe * Pd-Hg-Se system * crystal structure Subject RIV: CA - Inorganic Chemistry Impact factor: 1.671, year: 2012
Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

2014-01-01

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization
Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

Energy Technology Data Exchange (ETDEWEB)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

2016-02-21

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.
Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

International Nuclear Information System (INIS)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

2016-01-01

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.
Synthesis and first-principle calculations of the structural and electronic properties of Ge-substituted type-VIII Ba{sub 8}Ga{sub 16}Sn{sub 30} clathrate

Energy Technology Data Exchange (ETDEWEB)

Shen, Lanxian [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China); Li, Decong [College of Optoelectronic Engineering, Yunnan Open University, Kunming 650500 (China); Liu, Hongxia; Liu, Zuming [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China); Deng, Shukang, E-mail: skdeng@126.com [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China)

2016-12-01

In this study, the structural and electronic structural properties of Ba{sub 8}Ga{sub 16}Sn{sub 30−x}Ge{sub x} (0≤x≤30) are determined by the first-principle method on the basis of density functional theory. Consistent with experimental findings, calculated results reveal that Ge atoms preferentially occupy the 2a and 24g sites in these compounds. As the content of Ge in Ge-substituted clathrate is increased, the lattice parameter is decreased, and the structural stability is enhanced. The bandgaps of the compound at 1≤x≤10 are smaller than those of Ba{sub 8}Ga{sub 16}Sn{sub 30}. By contrast, the bandgaps of the compound at x>10 are larger than those of Ba{sub 8}Ga{sub 16}Sn{sub 30}. The substitution of Ge for Sn affects p-type conductivity but not n-type conductivity. As Ge content increases, the whole conduction band moves to the direction of high energy, and the density of states of valence-band top decreases. The calculated potential energy versus displacement of Ba indicates that the vibration energy of this atom increases as cage size decreases. Because Ge substitution also affects clathrate structural symmetry, the distance of Ba atom deviation from the center of the cage initially increases and subsequently decreases as the Ge content increases.
Study of Ge loss during Ge condensation process

International Nuclear Information System (INIS)

Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

2014-01-01

Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface
Cluster self-organization of germanate systems: suprapolyhedral precursor clusters and self-assembly of K2Nd4Ge4O13(OH)4, K2YbGe4O10(OH), K2Sc2Ge2O7(OH)2, and KScGe2O6(PYR)

International Nuclear Information System (INIS)

Ilyushin, G.D.; Dem'yanets, L.N.

2008-01-01

One performed the computerized (the TOPOS 4.0 software package) geometric and topological analyses of all known types of K, TR-germanates (TR = La-Lu, Y, Sc, In). The skeleton structure are shown as three-dimensional 3D, K, TR, Ge-patterns (graphs) with remote oxygen atoms. TR 4 3 3 4 3 3 + T 4 3 4 3, K 2 YbGe 4 O 14 (OH) pattern, TR 6 6 3 6 + T1 6 8 6 + T2 3 6 8, K 2 Sc 2 Ge 2 O 7 (OH) 2 , TR 6 4 6 4 + T 6 4 6 and KScGe 2 O 6 - TR 6 6 3 6 3 4 + T1 6 3 6 + T2 6 4 3 patterns served as crystal-forming 2D TR,Ge-patterns for K 2 Nd 4 Ge 4 O 13 (OH) 4 . One performed the 3D-simulation of the mechanism of self-arrangement of the crystalline structures: cluster-precursor - parent chain - microlayer - microskeleton (super-precursor). Within K 2 Nd 4 Ge 4 O 13 (OH) 4 , K 2 Sc 2 Ge 2 O 7 (OH) 2 and KScGe 2 O 6 one identified the invariant type of the cyclic hexapolyhedral cluster-precursor consisting of TR-octahedrons linked by diorthogroups stabilized by K atoms. For K 2 Nd 4 Ge 4 O 13 (OH) 4 one determined the type of the cyclic tetrapolyhedral cluster-precursor consisting of TR-octavertices linked by tetrahedrons. The cluster CN within the layer just for KScGe 2 O 6 water-free germanate (the PYR pyroxene analog) is equal to 6 (the maximum possible value), while in the rest OH-containing germanates it constitutes 4. One studied the formation mechanism of Ge-radicals in the form of Ge 2 O 7 and Ge 4 O 13 groupings, GeO 3 chain and the tubular structure consisting of Ge 8 O 20 fixed cyclic groupings [ru
Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

International Nuclear Information System (INIS)

Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

2011-01-01

Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.
Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Energy Technology Data Exchange (ETDEWEB)

Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

2016-08-29

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.
Growth and characterization of Ge nanostructures selectively grown on patterned Si

International Nuclear Information System (INIS)

Cheng, M.H.; Ni, W.X.; Luo, G.L.; Huang, S.C.; Chang, J.J.; Lee, C.Y.

2008-01-01

By utilizing different distribution of strain fields around the edges of oxide, which are dominated by a series of sizes of oxide-patterned windows, long-range ordered self-assembly Ge nanostructures, such as nano-rings, nano-disks and nano-dots, were selectively grown by ultra high vacuum chemical vapor deposition (UHV-CVD) on Si (001) substrates. High-resolution double-crystal symmetrical ω/2θ scans and two-dimensional reciprocal space mapping (2D-RSM) technologies employing the triple axis X-ray diffractometry have been used to evaluate the quality and strain status of as-deposited as well as in-situ annealed Ge nanostructures. Furthermore, we also compare the quality and strain status of Ge epilayers grown on planar unpatterned Si substrates. It was found that the quality of all Ge epitaxial structures is improved after in-situ annealing process and the quality of Ge nano-disk structures is better than that of Ge epilayers on planar unpatterned Si substrates, because oxide sidewalls are effective dislocation sinks. We also noted that the degree of relaxation for as-deposited Ge epilayers on planar unpatterned Si substrates is less than that for as-deposited Ge nano-disk structures. After in-situ annealing process, all Ge epitaxial structures are almost at full relaxation whatever Ge epitaxial structures grew on patterned or unpatterned Si substrates
Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

Science.gov (United States)

Ito, Koichi; Ohta, Akio; Kurosawa, Masashi; Araidai, Masaaki; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

The growth of a two-dimensional crystal of Ge atoms on an atomically flat Ag(111) surface has been demonstrated by the thermal annealing of a heteroepitaxial Ag/Ge structure in N2 ambient at atmospheric pressure. The surface morphology and chemical bonding features of heteroepitaxial Ag(111) grown on wet-cleaned Ge(111) after annealing at different temperatures and for various times have been systematically investigated to control the surface segregation of Ge atoms and the planarization of the heteroepitaxial Ag(111) surface.
Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

Science.gov (United States)

Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

2018-01-01

The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.
Structure fields in the solidifying cast iron roll

Directory of Open Access Journals (Sweden)

W.S. Wołczyński

2010-01-01

Full Text Available Some properties of the rolls depend on the ratio of columnar structure area to equiaxed structure area created during roll solidification. The transition is fundamental phenomenon that can be apply to characterize massive cast iron rolls produced by the casting house. As the first step of simulation, a temperature field for solidifying cast iron roll was created. The convection in the liquid is not comprised since in the first approximation, the convection does not influence the studied occurrence of the (columnar to equiaxed grains transition in the roll. The obtained temperature field allows to study the dynamics of its behavior observed in the middle of the mould thickness. This midpoint of the mould thickness was treated as an operating point for the transition. A full accumulation of the heat in the mould was postulated for the transition. Thus, a plateau at the curve was observed at the midpoint. The range of the plateau existence corresponded to the incubation period , that appeared before fully equiaxed grains formation. At the second step of simulation, behavior of the thermal gradients field was studied. Three ranges within the filed were visible: EC→EC→EC→EC→(tTECtt↔RERCtt↔a/ for the formation of columnar structure (the C – zone: ( and 0>>T&0>>=−>−=REREttGttG.The columnar structure formation was significantly slowed down during incubation period. It resulted from a competition between columnar growth and equiaxed growth expected at that period of time. The 0≈=−=RERCttGttG relationship was postulated to correspond well with the critical thermal gradient, known in the Hunt’s theory. A simulation was performed for the cast iron rolls solidifying as if in industrial condition. Since the incubation divides the roll into two zones: C and E; (the first with columnar structure and the second with fully equiaxed structure some experiments dealing with solidification were made on semi-industrial scale.

CAFE simulation of columnar-to-equiaxed transition in Al-7wt%Si alloys directionally solidified under microgravity

International Nuclear Information System (INIS)

Liu, D R; Mangelinck-Noël, N; Thi, H Nguyen; Billia, B; Gandin, Ch-A; Zimmermann, G; Sturz, L

2016-01-01

A two-dimensional multi-scale cellular automaton - finite element (CAFE) model is used to simulate grain structure evolution and microsegregation formation during solidification of refined Al-7wt%Si alloys under microgravity. The CAFE simulations are first qualitatively compared with the benchmark experimental data under microgravity. Qualitative agreement is obtained for the position of columnar to equiaxed transition (CET) and the CET transition mode (sharp or progressive). Further comparisons of the distributions of grain elongation factor and equivalent diameter are conducted and reveal a fair quantitative agreement. (paper)
Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Kozlovskii, Vladimir I; Korostelin, Yurii V; Skasyrsky, Yan K; Shapkin, P V; Trubenko, P A; Dianov, Evgenii M

1998-01-01

The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a scanning electron beam of E e = 40 - 70 keV energy. At T = 80 K for E e = 65 keV the threshold current density was 60 A cm -2 and the output power was 0.15 W at the 465 nm wavelength. At T= 300 K the lasing (λ= 474 nm) occurred in the ZnSe substrate. (lasers)
Influence of native catfish mucus on Flavobacterium columnare growth and proteolytic activity

Science.gov (United States)

Flavobacterium columnare causes columnaris disease of farmed and wild freshwater fish. Skin mucus is an important factor in early stages of columnaris pathogenesis, albeit little studied. Our objectives were to 1) characterize the terminal glycosylation pattern (TGP) of catfish mucus, 2) determine t...
Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Directory of Open Access Journals (Sweden)

Wei-Ting eLai

2016-02-01

Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.
Magnetic properties of TbTiGe

International Nuclear Information System (INIS)

Prokes, K.; Tegus, O.; Brueck, E.; Gortenmulder, T.J.; Boer, F.R. de; Buschow, K.H.J.

2001-01-01

We have studied the magnetic properties of the compound TbTiGe by means of neutron diffraction in the temperature range 1.7-310 K. We also report on magnetization measurements made at different temperatures and fields. The compound TbTiGe adopts the tetragonal CeFeSi-structure type and orders antiferromagnetically at T N =286 K. The structure is collinear antiferromagnetic in the whole temperature range below T N , with the magnetic moments aligned along the tetragonal c-axis. The uncommon shape of the temperature dependence of the magnetization observed in our sample is attributed to small amounts of the ferromagnetic low-temperature modification of TbTiGe
Evidence for momentum-dependent heavy-fermionic electronic structures: Soft x-ray ARPES for the superconductor CeNi2Ge2 in the normal state

Science.gov (United States)

Nakatani, Y.; Aratani, H.; Fujiwara, H.; Mori, T.; Tsuruta, A.; Tachibana, S.; Yamaguchi, T.; Kiss, T.; Yamasaki, A.; Yasui, A.; Yamagami, H.; Miyawaki, J.; Ebihara, T.; Saitoh, Y.; Sekiyama, A.

2018-03-01

We present clear experimental evidence for the momentum-dependent heavy fermionic electronic structures of the 4 f -based strongly correlated system CeNi2Ge2 by soft x-ray angle-resolved photoemission spectroscopy. A comparison between the experimental three-dimensional quasiparticle dispersion of LaNi2Ge2 and CeNi2Ge2 has revealed that heavy fermionic electronic structures are seen in the region surrounding a specific momentum. Furthermore, the wave vectors between the observed "heavy spots" are consistent with a result of neutron scattering reflecting magnetic correlations, which could be a trigger for the superconductivity in CeNi2Ge2 .
Crystal structure of RbCe(SeO4)2 · 5H2O

International Nuclear Information System (INIS)

Ovanesyan, S.M.; Iskhakova, L.D.; Trunov, V.K.

1987-01-01

RbTR(SeO 4 ) 2 x5H 2 O TR=La-Pr are synthesized. Crystal structure of RbCe(SeO 4 ) 2 x5H 2 O is studied. Monoclinic unit parameters are: a=7,200(2), b=8,723(1), c=19,258(6) A, Β=90,88(2), ρ (calc) =3,304 sp.gr. P2 1 /c. Within the structure the Ce nine vertex cages are united by Se(1)- and Se(2)-tetrahedrons in (Ce(SeO 4 ) 2 (H 2 O) 5 ) 2 ∞ n- layers. Some crystal structure regularities of the laminated MTR(EO 4 ) 2 xnH 2 O (M=NH 4 ,K,Rb,Cs; TR=La-Ln, E=S,Se) are considered
Electronic structure of YbNiX{sub 3} (X =Si, Ge) studied by hard X-ray photoemission spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Sato, Hitoshi; Shimada, Kenya; Namatame, Hirofumi [Hiroshima Synchrotron Radiation Center, Hiroshima University, Kagamiyama 2-313, Higashi-Hiroshima 739-0046 (Japan); Utsumi, Yuki [Max-Planck Institute for Chemical Physics of Solids, 01187 Dresden (Germany); Kodama, Junichi; Nagata, Heisuke [Graduate School of Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8526 (Japan); Avila, Marcos A.; Ribeiro, Raquel A. [Centro de Ciencias Naturais e Humanas, Universidade Federal do ABC, Santo Andre - SP, 09210-580 (Brazil); Umeo, Kazunori [Cryogenics and Instrumental Analysis Division, N-BARD, Hiroshima University, Higashi-Hiroshima 739-8526 (Japan); Takabatake, Toshiro [Department of Quantum Matter, AdSM, Hiroshima University, Higashi-Hiroshima 739-8530 (Japan); Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530 (Japan); Mimura, Kojiro; Motonami, Satoru; Anzai, Hiroaki [Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531 (Japan); Ueda, Shigenori [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148 (Japan); Taniguchi, Masaki [Hiroshima Synchrotron Radiation Center, Hiroshima University, Kagamiyama 2-313, Higashi-Hiroshima 739-0046 (Japan); Graduate School of Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8526 (Japan)

2015-06-15

lectronic structure of the Kondo lattices YbNiX{sub 3} (X =Si, Ge) has been investigated by means of hard x-ray photoemission spectroscopy (HAXPES) with hν = 5.95 keV. From the Yb 3d HAXPES spectra, the Yb valence in YbNiSi{sub 3} is estimated to be ∝ 2.92, which is almost temperature-independent. On the other hand, the valence in YbNiGe{sub 3} is estimated to be 2.48 at 300 K, showing significant valence fluctuation, and gradually decreases to 2.41 at 20 K on cooling. The Ni 2p{sub 3/2} and Yb{sup 3+} 4f peaks exhibit opposite energy shifts amounting to ∝ 0.6 eV between YbNiSi{sub 3} and YbNiGe{sub 3}. We propose a simple model for the electronic structure of YbNiX{sub 3} based on the HAXPES results. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Experimental study on combustion characteristics of sodium fire in a columnar flow

International Nuclear Information System (INIS)

Zhang Zhigang; Peng Kangwei; Guo Ming; Huo Yan

2014-01-01

In the operation of the sodium-cooled fast reactor, the accident caused by the leakage and combustion of liquid sodium is common and frequent in sodium-related facilities. This paper is based on an experimental study of sodium fire in a columnar flow, which was carried out to focus on the burning characteristics by analyzing the temperature fields in the burner. The injection of 200°C liquid sodium with the flux of 0.5 m 3 /h was poured into a 7.9 m 3 volume stainless steel cylindrical burner to shape a sodium fire, and the data of temperature fields in the burner have been collected by dozens of thermocouples which are laid in the combustion space and sodium collection plate. These results show that the sodium fire in a columnar flow is composed of the foregoing centered columnar fire, the subsequent spray fire caused by atomization and the pool fire on the collection plate. The temperature close to the burning sodium flow maximally reaches up to 950°C. The radial temperatures apart from the sodium flow are relatively low and generally about 200°C, and maximally just 300°C even when close to the sodium collection plate. The maximum temperature of the burning sodium dropping on the collection plate rises in the center of plate, about 528°C. This study is helpful to evaluate the combustion characteristics, formation process and composing forms of the sodium fire in the sodium-related facilities. (author)
The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)

International Nuclear Information System (INIS)

Zhang, Shiyan; Mei, Dajiang; Du, Xin; Lin, Zheshuai; Zhong, Junbo; Wu, Yuandong; Xu, Jingli

2016-01-01

Ag 1−x Ga 1−x Si x Se 2 solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe 4 has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe 4 is composed of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ga) tetrahedra. AgGaSiSe 4 is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe 4 and the value is 0.33 eV larger than that of Ag 3 Ga 3 SiSe 8 (2.30 eV). - Graphical abstract: The Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe 4 was synthesized for the first time. AgGaSiSe 4 crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe 4 . • AgGaSiSe 4 crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe 4 is enlarged compared with Ag 3 Ga 3 SiSe 8 .
Morphological and physiological characteristics of columnar apple trees

OpenAIRE

Gelvonauskis, Bronislovas; Brazaitytė, Aušra; Sasnauskas, Audrius; Duchovskis, Pavelas; Gelvonauskienė, Dalia

2006-01-01

There were investigated two columnar apple cultivars ‘Arbat’ and No. 24217 and apple cultivar ‘Aldas’ in an orchard at the Lithuanian Institute of Horticulture. The two latter cultivars were released at the Lithuanian Institute of Horticulture, ‘Arbat’ – in Russia. Cultivars and selections were budded on rootstocks P 60, M.26 and MM.106. In orchard apple trees were spaced at 1.0 x 3.5 m. Tree height, stem diameter, total length of one-year-old shoot, leaf area on a tree was measured and numbe...
Self-Organization of +-Crown Ether Derivatives into Double-Columnar Arrays Controlled by Supramolecular Isomers of Hydrogen-Bonded Anionic Biimidazolate Ni Complexes

Directory of Open Access Journals (Sweden)

Makoto Tadokoro

2012-01-01

Full Text Available Anionic tris (biimidazolate nickelate (II ([Ni(Hbim3]−, which is a hydrogen-bonding (H-bonding molecular building block, undergoes self-organization into honeycomb-sheet superstructures connected by complementary intermolecular H-bonds. The crystal obtained from the stacking of these sheets is assembled into channel frameworks, approximately 2 nm wide, that clathrate two cationic K+-crown ether derivatives organised into one-dimensional (1D double-columnar arrays. In this study, we have shown that all five cationic guest-included crystals form nanochannel structures that clathrate the 1-D double-columnar arrays of one of the four types of K+-crown ether derivatives, one of which induces a polymorph. This is accomplished by adaptably fitting two types of anionic [Ni(Hbim3]− host arrays. One is a ΔΛ−ΔΛ−ΔΛ⋯ network with H-bonded linkages alternating between the two different optical isomers of the Δ and Λ types with flexible H-bonded [Ni(Hbim3]−. The other is a ΔΔΔ−ΛΛΛ⋯ network of a racemate with 1-D H-bonded arrays of the same optical isomer for each type. Thus, [Ni(Hbim3]− can assemble large cations such as K+ crown-ether derivatives into double-columnar arrays by highly recognizing flexible H-bonding arrangements with two host networks of ΔΛ−ΔΛ−ΔΛ⋯ and ΔΔΔ−ΛΛΛ⋯.
Structure of the novel ternary hydrides Li4Tt2D (Tt=Si and Ge)

International Nuclear Information System (INIS)

Wu Hui; Rush, J.J.; Maryland Univ., College Park, MD; Hartman, M.R.; Oregon State Univ., Corvallis, OR; Udovic, T.J.; Zhou Wei; Pennsylvania Univ., Philadelphia, PA; Bowman, R.C. Jr.; Vajo, J.J.

2007-01-01

The crystal structures of newly discovered Li 4 Ge 2 D and Li 4 Si 2 D ternary phases were solved by direct methods using neutron powder diffraction data. Both structures can be described using a Cmmm orthorhombic cell with all hydrogen atoms occupying Li 6 -octahedral interstices. The overall crystal structure and the geometry of these interstices are compared with those of other related phases, and the stabilization of this novel class of ternary hydrides is discussed. (orig.)
P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

2016-07-15

Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.
Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

KAUST Repository

Liu, E. K.; Zhang, H. G.; Xu, G. Z.; Zhang, X. M.; Ma, R. S.; Wang, W. H.; Chen, J. L.; Zhang, H. W.; Wu, G. H.; Feng, L.; Zhang, Xixiang

2013-01-01

An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting
Syntheses, structures, and properties of Ag4(Mo2O5)(SeO4)2(SeO3) and Ag2(MoO3)3SeO3

International Nuclear Information System (INIS)

Ling Jie; Albrecht-Schmitt, Thomas E.

2007-01-01

Ag 4 (Mo 2 O 5 )(SeO 4 ) 2 (SeO 3 ) has been synthesized by reacting AgNO 3 , MoO 3 , and selenic acid under mild hydrothermal conditions. The structure of this compound consists of cis-MoO 2 2+ molybdenyl units that are bridged to neighboring molybdenyl moieties by selenate anions and by a bridging oxo anion. These dimeric units are joined by selenite anions to yield zigzag one-dimensional chains that extended down the c-axis. Individual chains are polar with the C 2 distortion of the Mo(VI) octahedra aligning on one side of each chain. However, the overall structure is centrosymmetric because neighboring chains have opposite alignment of the C 2 distortion. Upon heating Ag 4 (Mo 2 O 5 )(SeO 4 ) 2 (SeO 3 ) looses SeO 2 in two distinct steps to yield Ag 2 MoO 4 . Crystallographic data: (193 K; MoKα, λ=0.71073 A): orthorhombic, space group Pbcm, a=5.6557(3), b=15.8904(7), c=15.7938(7) A, V=1419.41(12), Z=4, R(F)=2.72% for 121 parameters with 1829 reflections with I>2σ(I). Ag 2 (MoO 3 ) 3 SeO 3 was synthesized by reacting AgNO 3 with MoO 3 , SeO 2 , and HF under hydrothermal conditions. The structure of Ag 2 (MoO 3 ) 3 SeO 3 consists of three crystallographically unique Mo(VI) centers that are in 2+2+2 coordination environments with two long, two intermediate, and two short bonds. These MoO 6 units are connected to form a molybdenyl ribbon that extends along the c-axis. These ribbons are further connected together through tridentate selenite anions to form two-dimensional layers in the [bc] plane. Crystallographic data: (193 K; MoKα, λ=0.71073 A): monoclinic, space group P2 1 /n, a=7.7034(5), b=11.1485(8), c=12.7500(9) A, β=105.018(1) V=1002.7(2), Z=4, R(F)=3.45% for 164 parameters with 2454 reflections with I>2σ(I). Ag 2 (MoO 3 ) 3 SeO 3 decomposes to Ag 2 Mo 3 O 10 on heating above 550 deg. C. - Graphical abstract: A view of the one-dimensional [(Mo 2 O 5 )(SeO 4 ) 2 (SeO 3 )] 4- chains that extend down the c-axis in the structure of Ag 4 (Mo 2 O 5 )(SeO 4
Electronic and atomic structures of KFe2Se2 grain boundaries

International Nuclear Information System (INIS)

Fan, Wei; Liu, Da-Yong; Zeng, Zhi

2014-01-01

Highlights: •Twist grain boundary has lower grain-boundary energy. •Twist grain-boundary has similar electronic structure to that in crystal. •Charge and magnetic-moment fluctuations are large within tilt grain boundary. •Bi-collinear AFM is most stable even with existence of grain boundary. •Insulating Fe-vacancy phase is stable with existence of twist grain boundary. -- Abstract: The electronic and atomic structures of the twist and tilt grain boundaries (GB) of the iron-based superconductor KFe 2 Se 2 are studied based on the simulations of the first principles density functional theory. Our results have clarified that the Σ5[0 0 1] twist grain boundary of KFe 2 Se 2 with layered structure has the lower grain-boundary energy. The local structure and the main features of the basic electronic structure within the [0 0 1] twist grain-boundary region have small differences compared with those in KFe 2 Se 2 crystal. The large fluctuations of the charges and magnetic moments are found in the [0 0 1] tilt grain-boundary regions, especially the former are more prominent. The bi-collinear anti-ferromagnetic order is the most stable magnetic order even with grain boundaries in the bulk. The √(5)a×√(5)a superstructure of Fe-vacancies in K 2 Fe 4 Se 5 phase is intrinsically related to the coincident-site lattice of Σ5[0 0 1] twist grain boundary
Effect of controlling recrystallization from the melt on the residual stress and structural properties of the Silica-clad Ge core fiber

Science.gov (United States)

Zhao, Ziwen; Cheng, Xueli; He, Ting; Xue, Fei; Zhang, Wei; Chen, Na; Wen, Jianxiang; Zeng, Xianglong; Wang, Tingyun

2017-09-01

Effect of controlling recrystallization from the melt (1000 °C) on the residual stress and structural properties of a Ge core fiber via molten core drawing (MCD) method is investigated. Ge core fibers is investigated using Raman spectroscopy, scanning electron microscope (SEM), and X-ray diffraction (XRD). Compared with the as-drawn Ge fiber, the Raman peak of the recrystallized Ge fiber shift from 300 cm-1 to 300.6 cm-1 and full width at half maximum (FWHM) decreased from 5.36 cm-1 to 4.48 cm-1. The Ge crystal grains which sizes are of 200-600 nm were formed during the process of recrystallization; the XRD peak of (1 1 1) plane is observed after recrystallization. These results show that controlling recrystallization allows the release of the thermal stress, and improvement of the crystal quality of Ge core.
Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO{sub 2} interface after capping with Al{sub 2}O{sub 3} layer

Energy Technology Data Exchange (ETDEWEB)

Paleari, S., E-mail: s.paleari6@campus.unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Molle, A. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Accetta, F. [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Lamperti, A.; Cianci, E. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Fanciulli, M., E-mail: marco.fanciulli@unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy)

2014-02-01

The electrical activity of Ge dangling bonds is investigated at the interface between GeO{sub 2}-passivated Ge(1 1 1) substrate and Al{sub 2}O{sub 3} grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al{sub 2}O{sub 3}/GeO{sub 2}/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (<10{sup 10} cm{sup −2}). In particular, it is shown that capping the GeO{sub 2}-passivated Ge(1 1 1) with Al{sub 2}O{sub 3} has no impact on the microstructure of the Ge dangling bond.
Element-resolved atomic structure imaging of rocksalt Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change material

Energy Technology Data Exchange (ETDEWEB)

Zhang, Bin; Chen, Yongjin; Han, Xiaodong, E-mail: wzhang0@mail.xjtu.edu.cn, E-mail: ema@jhu.edu, E-mail: xdhan@bjut.edu.cn [Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124 (China); Zhang, Wei, E-mail: wzhang0@mail.xjtu.edu.cn, E-mail: ema@jhu.edu, E-mail: xdhan@bjut.edu.cn [Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); I. Institute of Physics (IA), RWTH Aachen University, 52056 Aachen (Germany); Institute for Theoretical Solid-State Physics, RWTH Aachen University, 52056 Aachen (Germany); Shen, Zhenju; Li, Jixue [Department of Materials Science and Engineering, Center of Electron Microscopy and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Zhang, Shengbai [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang, Ze [Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124 (China); Department of Materials Science and Engineering, Center of Electron Microscopy and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Wuttig, Matthias [I. Institute of Physics (IA), RWTH Aachen University, 52056 Aachen (Germany); Mazzarello, Riccardo [Institute for Theoretical Solid-State Physics, RWTH Aachen University, 52056 Aachen (Germany); and others

2016-05-09

Disorder-induced electron localization and metal-insulator transitions (MITs) have been a very active research field starting from the seminal paper by Anderson half a century ago. However, pure Anderson insulators are very difficult to identify due to ubiquitous electron-correlation effects. Recently, an MIT has been observed in electrical transport measurements on the crystalline state of phase-change GeSbTe compounds, which appears to be exclusively disorder driven. Subsequent density functional theory simulations have identified vacancy disorder to localize electrons at the Fermi level. Here, we report a direct atomic scale chemical identification experiment on the rocksalt structure obtained upon crystallization of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5}. Our results confirm the two-sublattice structure resolving the distribution of chemical species and demonstrate the existence of atomic disorder on the Ge/Sb/vacancy sublattice. Moreover, we identify a gradual vacancy ordering process upon further annealing. These findings not only provide a structural underpinning of the observed Anderson localization but also have implications for the development of novel multi-level data storage within the crystalline phases.

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