Synthesis and thin film growth of alkaline cobaltates Na{sub x}CoO{sub 2} and Li{sub x}CoO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Sandra

2013-02-18

In this study sol-gel synthesis was used to fabricate Na{sub x}CoO{sub 2}, LiNi{sub 1/2}Co{sub 1/2}O{sub 2} and LiNi{sub 1/3}Mn{sub 1/3}Co{sub 1/3}O{sub 2}. By using acetate precursors a lower process temperature was accessible, which has a positive effect on the sodium and lithium loss during synthesis. The lithium based powders were single phase and kept cation stoichiometry after sintering. A small grain size is favourable for battery applications. Sodium content was slightly reduced after temperature treatment compared to the initial cation mixture, due to the high volatility of Na. To fabricate thin films PLD was used for deposition. All films were deposited on SrTiO{sub 3} substrates. The growth mechanism of Na{sub x}CoO{sub 2} on SrTiO{sub 3} was investigated and an in-plane and out-of-plane relation between film an substrate was found. The films grow 15 and 45 rotated with respect to the ab-plane of the substrate and grow in c-axis direction out-of-plane. The sodium content and the crystallinity of the Na{sub x}CoO{sub 2} was investigated as a function of the post deposition treatment. A change of x between 0.38 and 0.84 can be achieved. The γ-phase was preserved in all films despite of the change of the sodium content. The in-situ variation of sodium stoichiometry, allows to tune the film properties in a wide range. This feature is an advantage compared to bulk Na{sub x}CoO{sub 2}, in which only certain stoichiometries can be stabilized. Fabrication of superconducting thin films Na{sub 0.33}CoO{sub 2}.1.3H{sub 2}O was challenging, since the superconducting phase is metastable and hardly to stabilize as a thin film. LiNi{sub 1/3}Mn{sub 1/3}Co{sub 1/3}O{sub 2} and LiNi{sub 1/2}Co{sub 1/2}O{sub 2} thin films were grown by PLD in (104)-orientation. These thin film materials are promising candidates as cathode materials for the development of thin film batteries.

Enhancement of magnetic properties of Co2MnSi Heusler alloy prepared by mechanical alloying method

International Nuclear Information System (INIS)

Rabie, Naeemeh; Gordani, Gholam Reza; Ghasemi, Ali

2017-01-01

Highlights: • Ferromagnetic Heusler alloys of Co 2 MnSi were synthesized at low temperature. • There is an at least 30% reduction in the phase formation temperature. • Saturation magnetization of alloy was increased significantly after annealing. - Abstract: Ferromagnetic Heusler alloys of Co 2 MnSi were synthesized by mechanical alloying method at low temperature. The effect of milling time and annealing process on structural and magnetic properties of ferromagnetic alloy samples were studied by X-ray diffraction, scanning electron microscopy and vibration sample magnetometer methods, respectively. Structural characteristics such as crystallite size, phase percentage, and lattice parameter determined using the Rietveld method. The values of these parameters were obtained 362.9 nm, 5.699 Å and 98.7%, respectively for annealed sample. Magnetization studies show that the Co2MnSi phase is formed at 15 h of milling and is optimized after 20 h of milling. VSM results showed that saturation magnetization (M s ) of milled samples reduces from 112 to 75 (emu/g) with increasing milling time and then increased gradually to 95 emu/g. The effect of post-annealing on the structural and magnetic properties of milled samples was also investigated. The saturation magnetization of annealed sample (120 emu/g) is higher than the optimum milled sample (95 emu/g) due to increasing preferential ordered L2 1 structure.

Epitaxial growth and control of the sodium content in Na{sub x}CoO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Sandra; Komissinskiy, Philipp [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Major, Marton [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); WIGNER RCP, RMKI, H-1525 Budapest, P.O.B. 49 (Hungary); Donner, Wolfgang [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Alff, Lambert, E-mail: alff@oxide.tu-darmstadt.de [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

2013-10-31

Single-phase c-axis oriented Na{sub x}CoO{sub 2} thin films were grown on (001) SrTiO{sub 3} single-crystal substrates, using pulsed laser deposition. X-ray diffraction analysis indicates the epitaxial growth of Na{sub x}CoO{sub 2} thin films in two domains, rotated in-plane by 15 and 45 degrees relative to [100] SrTiO{sub 3}. The sodium stoichiometry x of the films can be controlled in a range of 0.38 < x < 0.84 by in-situ post-deposition annealing the Na{sub x}CoO{sub 2} films at 720 – 760 °C in oxygen for 10 – 30 min. γ - Na{sub x}CoO{sub 2} films are obtained with a full width at half maximum of the (002) Na{sub x}CoO{sub 2} rocking curve below 0.2 degrees. The post-deposition annealing can substitute commonly used chemical deintercalation of Na which is typically associated with a loss in crystallinity. - Highlights: • Single phase Na{sub x}CoO{sub 2} thin films grown by pulsed laser deposition • Epitaxial relations of Na{sub x}CoO{sub 2} thin films on (001) SrTiO{sub 3} substrates • Multi-domain thin films • Control of sodium content by in-situ annealing of Na{sub x}CoO{sub 2} thin films.

Cycling-induced degradation of LiCoO{sub 2} thin-film cathodes at elevated temperature

Energy Technology Data Exchange (ETDEWEB)

Van Sluytman, J.S.; Alamgir, F.M.; Greenbaum, S.G. [Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, NY 10021 (United States); West, W.C.; Whitacre, J.F. [Electrochemical Technologies Group, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 (United States)

2006-04-01

The cycle life of LiCoO{sub 2}-based all solid-state thin-film cells has been studied at room temperature, and at elevated temperatures of 50, 100, and 150{sup o}C. X-ray diffraction, as well as Raman analysis, has been used to complement the electrochemical data in examining structural and chemical changes. XRD and Raman spectroscopy data indicate that elevated temperature soaks of the thin-film batteries in the quiescent state causes no discernible changes in the LiCoO{sub 2} cathode layer. However, when the thin-film batteries are cycled at elevated temperatures, decreases in average grain size of the LiCoO{sub 2} film occur with dramatic concomitant charge and discharge capacity loss. (author)

Point defects in MnSi and YBCO studied by Doppler Broadening Spectroscopy using a positron beam

Energy Technology Data Exchange (ETDEWEB)

Reiner, Markus

2015-10-28

The positron beam NEPOMUC was used in order to investigate MnSi and YBa{sub 2}Cu{sub 3}O{sub 7-δ} (YBCO) single crystals. The Doppler broadening of the annihilation radiation of electron-positron pairs was analyzed. Thus, the concentration of Mn vacancies in MnSi crystals was determined. In thin YBCO films, the Doppler broadening is correlated with the oxygen deficiency δ. Its spatial distribution and its high-temperature behavior were studied using positrons.

Enhancement of magnetic properties of Co{sub 2}MnSi Heusler alloy prepared by mechanical alloying method

Energy Technology Data Exchange (ETDEWEB)

Rabie, Naeemeh; Gordani, Gholam Reza; Ghasemi, Ali, E-mail: ali13912001@yahoo.com

2017-07-15

Highlights: • Ferromagnetic Heusler alloys of Co{sub 2}MnSi were synthesized at low temperature. • There is an at least 30% reduction in the phase formation temperature. • Saturation magnetization of alloy was increased significantly after annealing. - Abstract: Ferromagnetic Heusler alloys of Co{sub 2}MnSi were synthesized by mechanical alloying method at low temperature. The effect of milling time and annealing process on structural and magnetic properties of ferromagnetic alloy samples were studied by X-ray diffraction, scanning electron microscopy and vibration sample magnetometer methods, respectively. Structural characteristics such as crystallite size, phase percentage, and lattice parameter determined using the Rietveld method. The values of these parameters were obtained 362.9 nm, 5.699 Å and 98.7%, respectively for annealed sample. Magnetization studies show that the Co2MnSi phase is formed at 15 h of milling and is optimized after 20 h of milling. VSM results showed that saturation magnetization (M{sub s}) of milled samples reduces from 112 to 75 (emu/g) with increasing milling time and then increased gradually to 95 emu/g. The effect of post-annealing on the structural and magnetic properties of milled samples was also investigated. The saturation magnetization of annealed sample (120 emu/g) is higher than the optimum milled sample (95 emu/g) due to increasing preferential ordered L2{sub 1} structure.

Structural and magnetic properties of [001] CoCr2O4 thin films

NARCIS (Netherlands)

Guzman, Roger; Heuver, Jeroen; Matzen, Sylvia; Magen, Cesar; Noheda, Beatriz

2017-01-01

The spinel CoCr2O4 (CCO) is one of the few bulk multiferroics with net magnetic moment. However, studies on the properties of CCO thin films are scarce. Here, we investigate the interplay between microstructure and magnetism of a series of CCO epitaxial thin films by means of x-ray diffraction,

First-principles study of mechanical, exchange interactions and the robustness in Co{sub 2}MnSi full Heusler compounds

Energy Technology Data Exchange (ETDEWEB)

Akriche, A., E-mail: akricheahmed@gmail.com [Laboratoire de Microscope Electronique et Sciences des Matériaux, Université d’Oran des Sciences et de la Technologie-USTO, Mohamed Boudiaf, Faculté de physique, Département de Génie Physique, Oran (Algeria); Bouafia, H. [Laboratoire de Génie Physique, Université Ibn-Khaldoun, Tiaret 14000 (Algeria); Hiadsi, S. [Laboratoire de Microscope Electronique et Sciences des Matériaux, Université d’Oran des Sciences et de la Technologie-USTO, Mohamed Boudiaf, Faculté de physique, Département de Génie Physique, Oran (Algeria); Abidri, B. [Laboratoire des Matériaux Magnétiques, Université Djillali Liabés, Sidi Bel-Abbes (Algeria); Sahli, B. [Laboratoire de Génie Physique, Université Ibn-Khaldoun, Tiaret 14000 (Algeria); Elchikh, M.; Timaoui, M.A.; Djebour, B. [Laboratoire de Microscope Electronique et Sciences des Matériaux, Université d’Oran des Sciences et de la Technologie-USTO, Mohamed Boudiaf, Faculté de physique, Département de Génie Physique, Oran (Algeria)

2017-01-15

In this work we report the results of ab-initio studies of structural, mechanical, electronic and magnetic properties of Co based Co{sub 2}MnSi Heusler compound in stoichiometric composition. All of which are accurately calculated by the full-potential (FP-LMTO) program combined with the spin polarized generalized gradient approximation in the density functional formalism (DFT). The total energy calculations clearly favor the ferromagnetic ground state. The lattice parameter, elastic constants and their related parameters were also evaluated and compared to experimental and theoretical values whenever possible. In this paper, the electronic properties are treated with GGA+U approach. The magnetic exchange constants temperature has been calculated using a mean field-approximation (MFA). The half-metal to metal transition was observed around 40 GPa. Increasing pressure has no impact on the total magnetic moment or the overall shape of the band structure that indicates the robustness of the electronic structure of this system. - Highlights: • In this work, we have studied some physical properties of Co{sub 2}MnSi Heusler compound. • The exchange-correlation energy is treated within GGA and (GGA+U) approximation. • The electronic band structure shows that Co{sub 2}MnSi is a half-metallic compound.

Thin Co films with tunable ferromagnetic resonance frequency

International Nuclear Information System (INIS)

Maklakov, Sergey S.; Maklakov, Sergey A.; Ryzhikov, Ilya A.; Rozanov, Konstantin N.; Osipov, Alexey V.

2012-01-01

The tailored production of thin Co films of 50 nm thick with ferromagnetic resonance frequency in a range from 2.9 to 7.3 GHz using the DC magnetron sputtering is reported. The ferromagnetic resonance frequency, coercivity, effective magnetic field and nanocrystalline structure parameters are shown to be governed by the Co deposition rate. For this investigation, FMR, VSM and TEM techniques were used. - Highlights: ► Thin Co films with FMR frequency in a range from 2.9 to 7.3 GHz are obtained. ► The films' properties are governed by the deposition rate during DC magnetron sputtering. ► FMR, VSM and TEM techniques were used during the study.

Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

International Nuclear Information System (INIS)

Ahmed, Aziz; Han, Seungwoo

2017-01-01

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

Science.gov (United States)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Pentiptycene-based polyurethane with enhanced mechanical properties and CO2-plasticization resistance for thin film gas separation membranes.

Science.gov (United States)

Pournaghshband Isfahani, Ali; Sadeghi, Morteza; Wakimoto, Kazuki; Shrestha, Binod Babu; Bagheri, Rouhollah; Sivaniah, Easan; Ghalei, Behnam

2018-04-30

Development of thin film composite (TFC) membranes offers an opportunity to achieve the permeability/selectivity requirements for optimum CO2 separation performance. However, the durability and performance of thin film gas separation membranes are mostly challenged by weak mechanical properties and high CO2 plasticization. Here, we designed new polyurethane (PU) structures with bulky aromatic chain extenders that afford preferred mechanical properties for ultra-thin film formation. An improvement of about 1500% in Young's modulus and 600% in hardness was observed for pentiptycene-based PUs compared to typical PU membranes. Single (CO2, H2, CH4, and N2) and mixed (CO2/N2 and CO2/CH4) gas permeability tests were performed on the PU membranes. The resulting TFC membranes showed a high CO2 permeance up to 1400 GPU (10-6 cm3(STP) cm-2s-1 cmHg-1) and the CO2/N2 and CO2/H2 selectivities of about 22 and 2.1, respectively. The enhanced mechanical properties of pentiptycene-based PUs results in high performance thin membranes with the similar selectivity of the bulk polymer. The thin film membranes prepared from pentiptycene-based PUs also showed a two-fold enhanced plasticization resistance compared to non-pentiptycene containing PU membranes.

Thermoelectric properties of cobalt–antimonide thin films prepared by radio frequency co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz; Han, Seungwoo, E-mail: swhan@kimm.re.kr

2015-07-31

Co–Sb thin films with an Sb content in the range 65–76 at.%, were deposited on a thermally oxidized Si (100) substrate preheated at 200 °C using radio-frequency co-sputtering. Evaluation using scanning electron microscopy images and X-ray diffraction reveals that the films were polycrystalline, with a grain size in the range 100–250 nm. Energy-dispersive spectroscopy analysis indicates single-phase CoSb{sub 2} and CoSb{sub 3} films, as well as multiphase thin films with either CoSb{sub 2} or CoSb{sub 3} as the dominant phase. The electrical and thermoelectric properties were measured and found to be strongly dependent on the observed phases and the defect concentrations. The CoSb{sub 2} thin films were found to exhibit a significant n-type thermoelectric effect, which, coupled with the very low electrical resistivity, resulted in a larger power factor than that of the CoSb{sub 3} thin films. We find power factors of 0.73 mWm{sup −1} K{sup −2} and 0.67 mWm{sup −1} K{sup −2} for the CoSb{sub 2} and CoSb{sub 3} thin films, respectively. - Highlights: • Polycrystalline Co–Sb thin films were obtained by present deposition strategy. • CoSb{sub 2} and CoSb{sub 3} have semimetal and semiconductor characteristics respectively. • The Seebeck coefficient depends heavily on defect concentration and impurity phases. • Film properties in the second heating cycle were different from the first. • CoSb{sub 2} is found to possess significant n-type thermopower.

Co-sputtered ZnO:Si thin films as transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

2012-12-01

Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

2017-06-30

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

Science.gov (United States)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Electronic transport properties of nanostructured MnSi-films

Science.gov (United States)

Schroeter, D.; Steinki, N.; Scarioni, A. Fernández; Schumacher, H. W.; Süllow, S.; Menzel, D.

2018-05-01

MnSi, which crystallizes in the cubic B20 structure, shows intriguing magnetic properties involving the existence of skyrmions in the magnetic phase diagram. Bulk MnSi has been intensively investigated and thoroughly characterized, in contrast to MnSi thin film, which exhibits widely varying properties in particular with respect to electronic transport. In this situation, we have set out to reinvestigate the transport properties in MnSi thin films by means of studying nanostructure samples. In particular, Hall geometry nanostructures were produced to determine the intrinsic transport properties.

Influence of the substrate texture on the structural and electrochemical properties of sputtered LiCoO2 thin films

International Nuclear Information System (INIS)

Jung, Ki-Taek; Cho, Gyu-Bong; Kim, Ki-Won; Nam, Tae-Hyun; Jeong, Hyo-Min; Huh, Sun-Chul; Chung, Han-Shik; Noh, Jung-Pil

2013-01-01

LiCoO 2 thin films were fabricated on textured and annealed STS304 substrates by direct current magnetron sputtering method. The effects of the substrate texture on the structural and electrochemical properties of the LiCoO 2 thin film deposited on both the substrates have been investigated. The crystal structures and surface morphologies of the deposited films were analyzed by X-ray diffractometry (XRD), Raman spectroscopy, and field emission scanning electron microscopy (FE-SEM). Based on the XRD analysis, the LiCoO 2 thin film deposited on the textured substrate was found to exhibit (003) preferred orientation, while the film deposited on annealed substrate exhibited (104) preferred orientation. In addition, SEM analysis revealed that the film deposited on the textured substrate showed a smooth morphology. On the other hand, the film deposited on the annealed substrate exhibited a very rough surface morphology, which resulted in a higher surface area. Consequently, the initial discharge capacity of the film deposited on the annealed substrate was higher than that of the film deposited on the textured substrate. The film deposited on the textured substrate exhibited a good cyclic performance compared to the film deposited on the annealed substrate. - Highlights: • The sputtered LiCoO 2 thin films were influenced by the substrate texture. • The film deposited on the annealed substrate exhibited (104) preferred orientation. • The film deposited on the textured substrate exhibited a good cyclic performance

Sensors of the gas CO in thin film of SnO2:Cu

International Nuclear Information System (INIS)

Tirado G, S.; Sanchez Z, F. E.

2011-10-01

Thin films of SnO 2 :Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO 2 were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO 2 :Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO 2 :Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

International Nuclear Information System (INIS)

Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

2011-01-01

Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

Performance evaluation of symmetric supercapacitor based on cobalt hydroxide [Co(OH)2] thin film electrodes

International Nuclear Information System (INIS)

Jagadale, A.D.; Kumbhar, V.S.; Dhawale, D.S.; Lokhande, C.D.

2013-01-01

In the present investigation, we have successfully assembled symmetric supercapacitor device based on cobalt hydroxide [Co(OH) 2 ] thin film electrodes using 1 M KOH as an electrolyte. Initially, potentiodynamic electrodeposition method is employed for the preparation of Co(OH) 2 thin films onto stainless steel substrate. These films are characterized for structural and morphological elucidations using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The XRD reveals formation of β-Co(OH) 2 material with hexagonal crystal structure. The SEM images show formation of nanoflakes like microstructure with average flake width 100 nm. Electrochemical characterizations of Co(OH) 2 based symmetric supercapacitor cell are carried out using cyclic voltammetry, charge–discharge and electrochemical impedance spectroscopy (EIS) techniques. In the performance evaluation the maximum values of specific capacitance, specific energy and specific power are encountered as 44 F g −1 , 3.96 Wh kg −1 and 42 kW kg −1 . The value of equivalent series resistance (ESR) is estimated as 2.3 Ω using EIS

Investigation of interfacial resistance between LiCoO{sub 2} cathode and LiPON electrolyte in the thin film battery

Energy Technology Data Exchange (ETDEWEB)

Jeong, Eunkyung; Hong, Chan; Tak, Yongsug [Department of Chemical Engineering, Inha University, Inchon 402-751 (Korea, Republic of); Nam, Sang Cheol [Nuricell Inc., Jungrang-Ku, Seoul 131-220 (Korea, Republic of); Cho, Sungbaek [Agency for Defense Development, P.O. Box 35, Daejeon (Korea, Republic of)

2006-09-13

All solid-state thin film battery was prepared with conventional sputtering technologies. Low conductivity of lithium phosphorus oxynitride (LiPON) electrolyte and higher resistance at the interface of LiCoO{sub 2}/LiPON was crucial for the development of thin film battery. Presence of thermally treated Al{sub 2}O{sub 3} thin film at the interface of LiCoO{sub 2}/LiPON decreased the interfacial resistance and increased the discharge capacity with the better cycling behaviors. Surface analysis and electrochemical impedance measurement indicate the formation of solid solution LiCo{sub 1-y}Al{sub y}O{sub 2} at the interface of LiCoO{sub 2}/LiPON. (author)

All-solid-state thin film battery based on well-aligned slanted LiCoO{sub 2} nanowires fabricated by glancing angle deposition

Energy Technology Data Exchange (ETDEWEB)

Yoon, Miyoung [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Seunghwan [High Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Daehee [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Joosun, E-mail: joosun@kist.re.kr [High Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Moon, Jooho, E-mail: jmoon@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

2017-08-01

Graphical abstract: We successfully fabricated well-aligned slanted LiCoO{sub 2} nanowires as a one-dimensional nanostructured cathode by glancing angle deposition to enhance the electrochemical performance of all-solid-state thin film batteries. - Highlights: • Well-aligned slanted LiCoO{sub 2} nanowires are fabricated by glancing angle deposition. • One-dimensional nanostructured LiCoO{sub 2} cathode enlarges the contact area. • All-solid-state thin film battery exhibits enhances rate capability and cycling stability. - Abstract: We fabricated all-solid-state thin film batteries based on well-aligned slanted LiCoO{sub 2} nanowires by glancing angle deposition, as a facile template-free method in order to increase the electrochemically active site, i.e., the contact area between the solid electrolyte and the electrode. A highly porous thin film composed of well-separated slanted LiCoO{sub 2} nanowires not only facilitates the penetration of solid electrolyte phase into the cathode, but also alleviates the thermally and mechanically induced stresses during post-annealing and electrochemical cycling. The all-solid-state thin film battery based on the well-aligned slanted LiCoO{sub 2} nanowires, whose contact area between electrolyte and electrode was three times as high as that of a dense thin film, could provide additional migration pathways for lithium ion diffusion due to the enlarged reaction sites. This resulted in enhanced electrochemical kinetics, thereby leading to better rate capability and long-term cyclic stability as compared to the dense LiCoO{sub 2} thin film.

Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

Directory of Open Access Journals (Sweden)

K. Durga Venkata Prasad

2016-07-01

Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

A highly selective and wide range ammonia sensor—Nanostructured ZnO:Co thin film

International Nuclear Information System (INIS)

Mani, Ganesh Kumar; Rayappan, John Bosco Balaguru

2015-01-01

Graphical abstract: - Highlights: • Cobalt doped nanostructured ZnO thin films were spray deposited on glass substrates. • Co-doped ZnO film was highly selective towards ammonia than ethanol, methanol, etc. • The range of ammonia detection was improved significantly by doping cobalt in ZnO. - Abstract: Ammonia sensing characteristics of undoped and cobalt (Co)-doped nanostructured ZnO thin films were investigated. Polycrystalline nature with hexagonal wurtzite structure and high crystalline quality with dominant (0 0 2) plane orientation of Co-doped ZnO film were confirmed by the X-ray diffractogram. Scanning electron micrographs of the undoped film demonstrated the uniform deposition of sphere-shaped grains. But, smaller particles with no clear grain boundaries were observed for Co-doped ZnO thin film. Band gap values were found to be 3.26 eV and 3.22 eV for undoped and Co-doped ZnO thin films. Ammonia sensing characteristics of Co-doped ZnO film at room temperature were investigated in the concentration range of 15–1000 ppm. Variation in the sensing performances of Co-doped and pure ZnO thin films has been analyzed and compared

Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

Science.gov (United States)

Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

2016-08-01

We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

Compositional dependence of Young's moduli for amorphous FeCo-SiO2 thin films

International Nuclear Information System (INIS)

Zhang, L.; Xie, J. L.; Deng, L. J.; Guo, Q.; Zhu, Z. W.; Bi, L.

2011-01-01

Systematic force-deflection measurements with microcantilevers and a combinatorial-deposition method have been used to investigate the Young's moduli of amorphous composite FeCo-SiO 2 thin films as a function of film composition, with high compositional resolution. It is found that the modulus decreases monotonically with increasing FeCo content. Such a trend can be explained in terms of the metalloid atoms having a significant effect on the Young's moduli of metal-metalloid composites, which is associated with the strong chemical interaction between the metalloid and themetallic atoms rather than that between the metallic components themselves. This work provides an efficient and effective method to study the moduli of magnetic thin films over a largecomposition coverage, and to compare the relative magnitudes of moduli for differentcompositions at high compositional resolution.

Study of electronic structure and magnetic properties of epitaxial Co{sub 2}FeAl Heusler Alloy Thin Films

Energy Technology Data Exchange (ETDEWEB)

Soni, S. [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Dalela, S., E-mail: sdphysics@rediffmail.com [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Sharma, S.S. [Department of Physics, Govt. Women Engineering College, Ajmer (India); Liu, E.K.; Wang, W.H.; Wu, G.H. [State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Kumar, M. [Department of Physics, Malviya National Institute of Technology, Jaipur-302017 (India); Garg, K.B. [Department of Physics, University of Rajasthan, Jaipur-302004 (India)

2016-07-25

This work reports the magnetic and electronic characterization of plane magnetized buried Heusler Co{sub 2}FeAl nano thin films of different thickness by X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) measurements. . The spectra on both Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence, corresponding to a ferromagnetically-aligned moments on Fe and Co atoms conditioning the peculiar characteristics of the Co{sub 2}FeAl Heusler compound (a half-metallic ferromagnet). The detailed knowledge of the related magnetic and electronic properties of these samples over a wide range of thickness of films are indispensable for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications. - Highlights: • Electronic structure and Magnetic Properties of Epitaxial Co{sub 2}FeAl Heusler Films. • X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). • Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence. • Calculated Orbital, Spin and total magnetic moments of Fe and Co for 30 nm Co{sub 2}FeAl thin film. • The total magnetic moment of Fe at L{sub 2,3} edges increases with the thickness of the Co2FeAl films.

Optical and electrical properties of Ti(Cr)O_2:N thin films deposited by magnetron co-sputtering

International Nuclear Information System (INIS)

Kollbek, K.; Szkudlarek, A.; Marzec, M.M.; Lyson-Sypien, B.; Cecot, M.; Bernasik, A.; Radecka, M.; Zakrzewska, K.

2016-01-01

Graphical abstract: - Highlights: • Co-doped well-crystallized stoichiometric Ti(Cr)O_2:N thin films are deposited. • Magnetron sputtering of ceramic TiO_2 target is a new strategy for co-doping. • Bigger contribution from substitutionally incorporated nitrogen is seen in XPS. • Significant red shift of the fundamental absorption edge is obtained. - Abstract: The paper deals with TiO_2-based thin films, doped with Cr and N, obtained by magnetron co-sputtering from titanium dioxide ceramic and chromium targets in Ar + N_2 atmosphere. Co-doped samples of Ti(Cr)O_2:N are investigated from the point of view of morphological, crystallographic, optical, and electrical properties. Characterization techniques such as: X-ray diffraction, XRD, scanning electron microscopy, SEM, atomic force microscopy, AFM, Energy Dispersive X-ray spectroscopy, EDX, X-ray photoelectron spectroscopy, XPS, optical spectrophotometry as well as impedance spectroscopy are applied. XRD reveals TiO_2 and TiO_2:N thin films are well crystallized as opposed to those of TiO_2:Cr and Ti(Cr)O_2:N. XPS spectra confirm that co-doping has been successfully performed with the biggest contribution from the lower binding energy component of N 1s peak at 396 eV. SEM analysis indicates uniform and dense morphology without columnar growth. Comparison between the band gaps indicates a significant shift of the absorption edge towards visible range from 3.69 eV in the case of non-stoichiometric Ti(Cr)O_2_−_x:N to 2.78 eV in the case of stoichiometric Ti(Cr)O_2:N which should be attributed to the incorporation of both dopants at substitutional positions in TiO_2 lattice. Electrical conductivity of stoichiometric Ti(Cr)O_2:N increases in comparison to co-doped nonstoichiometric TiO_2_−_x thin film and reaches almost the same value as that of TiO_2 stoichiometric film.

Superconductivity in Na{sub 1-x}CoO{sub 2}.yH{sub 2}O thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Sandra; Komissinkiy, Philipp; Alff, Lambert [Institute for Materials Science, TU Darmstadt (Germany); Fritsch, Ingo; Habermeier, Hanns-Ulrich [Max-Planck-Institute for Solid State Research, Stuttgart (Germany); Lemmens, Peter [Institute for Condensed Matter Physics, TU Braunschweig (Germany)

2010-07-01

Sodium cobaltate (Na{sub 1-x}CoO{sub 2}) is a novel material with thermoelectric behavior, charge and spin ordered states dependent on the sodium content in the composition. A superconducting phase was found in water intercalated sodium cobaltate (Na{sub 1-x}CoO{sub 2}.yH{sub 2}O) with x=0.65-0.7 and y=0.9-1.3. The pairing state is still under debate, but there are some indications for a spin-triplet or p-wave superconducting pairing state. First films of Na{sub 1-x}CoO{sub 2}.yH{sub 2}O with a superconducting transition temperature near 5 K have been successfully grown. Here we report on thin films of Na{sub 1-x}CoO{sub 2} grown by pulsed laser deposition technique. The deposition parameters, sodium deintercalation and water intercalation conditions are tuned in order to obtain the superconducting phase. The instability of this phase might be an indication for triplet superconductivity, which is known to be affected strongly by impurities and defects.This observation is in agreement with the fact that so far also no superconducting thin films of the most famous triplet superconductor Sr{sub 2}RuO{sub 4} have been reported.

Resistance switching in epitaxial SrCoOx thin films

Science.gov (United States)

Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

2014-08-01

We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO2.5) and conducting perovskite (SrCoO3-δ) depending on the oxygen content. The current-voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoOx thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO2.5.

Resistance switching in epitaxial SrCoOx thin films

International Nuclear Information System (INIS)

Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

2014-01-01

We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO 3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO 2.5 ) and conducting perovskite (SrCoO 3−δ ) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO x thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO 2.5

Dry lithography of large-area, thin-film organic semiconductors using frozen CO(2) resists.

Science.gov (United States)

Bahlke, Matthias E; Mendoza, Hiroshi A; Ashall, Daniel T; Yin, Allen S; Baldo, Marc A

2012-12-04

To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO(2) resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO(2) is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical and electrical properties of Ti(Cr)O{sub 2}:N thin films deposited by magnetron co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Kollbek, K., E-mail: kamila.kollbek@agh.edu.pl [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Szkudlarek, A.; Marzec, M.M. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Lyson-Sypien, B.; Cecot, M. [Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Bernasik, A. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Radecka, M. [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Zakrzewska, K. [Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland)

2016-09-01

Graphical abstract: - Highlights: • Co-doped well-crystallized stoichiometric Ti(Cr)O{sub 2}:N thin films are deposited. • Magnetron sputtering of ceramic TiO{sub 2} target is a new strategy for co-doping. • Bigger contribution from substitutionally incorporated nitrogen is seen in XPS. • Significant red shift of the fundamental absorption edge is obtained. - Abstract: The paper deals with TiO{sub 2}-based thin films, doped with Cr and N, obtained by magnetron co-sputtering from titanium dioxide ceramic and chromium targets in Ar + N{sub 2} atmosphere. Co-doped samples of Ti(Cr)O{sub 2}:N are investigated from the point of view of morphological, crystallographic, optical, and electrical properties. Characterization techniques such as: X-ray diffraction, XRD, scanning electron microscopy, SEM, atomic force microscopy, AFM, Energy Dispersive X-ray spectroscopy, EDX, X-ray photoelectron spectroscopy, XPS, optical spectrophotometry as well as impedance spectroscopy are applied. XRD reveals TiO{sub 2} and TiO{sub 2}:N thin films are well crystallized as opposed to those of TiO{sub 2}:Cr and Ti(Cr)O{sub 2}:N. XPS spectra confirm that co-doping has been successfully performed with the biggest contribution from the lower binding energy component of N 1s peak at 396 eV. SEM analysis indicates uniform and dense morphology without columnar growth. Comparison between the band gaps indicates a significant shift of the absorption edge towards visible range from 3.69 eV in the case of non-stoichiometric Ti(Cr)O{sub 2−x}:N to 2.78 eV in the case of stoichiometric Ti(Cr)O{sub 2}:N which should be attributed to the incorporation of both dopants at substitutional positions in TiO{sub 2} lattice. Electrical conductivity of stoichiometric Ti(Cr)O{sub 2}:N increases in comparison to co-doped nonstoichiometric TiO{sub 2−x} thin film and reaches almost the same value as that of TiO{sub 2} stoichiometric film.

Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

Science.gov (United States)

Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

2018-04-01

In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

Li ion transport in sputter deposited LiCoO{sub 2} thin films and glassy borate membranes

Energy Technology Data Exchange (ETDEWEB)

Stockhoff, Tobias; Gallasch, Tobias; Schmitz, Guido [Westfaelische Wilhelms-Universitaet Muenster, Institut fuer Materialphysik, Muenster (Germany)

2010-07-01

LiCoO{sub 2} membranes are key components of current battery technology. We investigate sputter-deposited thin films of these materials aiming at the application in all-solid-state thin film batteries. For this, LiCoO{sub 2} films (10-200 nm) were deposited onto ITO-coated glass substrates by ion beam sputtering. In addition, a part of these films are coated by an ion-conductive membrane of Li{sub 2}O-B{sub 2}O{sub 3} glasses in the thickness range of 50 to 300 nm. Structural, chemical and electrical properties of the layers are studied by means of TEM(EELS) and various electrical methods (cyclic voltammetry, chrono-amperometry/-potentiometry). Since the color of the LiCoO{sub 2} films changes from red-brown to grey during de-intercalation of Li and the substrate as well as the glassy membrane deposited on top are optical transparent, reversible Li de- and intercalation can be directly demonstrated and quantified by a measurement of light transmission through the layered system. Samples coated with an ion-conductive membrane reveal a characteristic delay in switching optical transparency which is due to the slower transport across the membrane. Varying the thickness of the glassy membrane, the d.c. ion-conductivity and permeation through the membrane is determined quantitatively. Using thin membranes in the range of a few tens of nanometers the critical current densities are way sufficient for battery applications.

Self-assembled micro-/nanostructured WO3 thin films by aqueous chemical growth and their applications in H2 and CO2 sensing

Science.gov (United States)

Sone, B. T.; Nkosi, S. S.; Nkosi, M. M.; Coetsee-Hugo, E.; Swart, H. C.; Maaza, M.

2018-05-01

Application of thin film technology is increasing in many areas such as energy production, energy saving, telecommunications, protective and smart coatings, etc. This increased application creates a need for simple, cost-effective methods for the synthesis of highly multifunctional metal oxide thin films. The technique of Aqueous Chemical Growth is presented in this paper as a simple inexpensive means of producing WO3 thin films that find applications in gas sensing, electrochromism and photocatalysis. We demonstrate, through this technique, that heterogeneous nucleation and growth of WO3 thin films on plain glass substrates takes place at low pHs and low temperatures (75-95 °C) without the use of surfactants and template directing methods. The substrates used needed no surface-modification. On the plain glass substrates (soda lime silicates) a variety of micro-nanostructures could be observed most important of which were nanoplatelets that acted as a basic building block for the self-assembly of more hierarchical 3-d microspheres and thin films. The dominant crystallographic structure observed through X-ray diffraction analysis was found to be hexagonal-WO3 and monoclinic WO3. The thin films produced showed a fair degree of porosity. Some of the thin films on glass showed ability to sense, unaided, H2 at 250 °C. Sensor responses were observed to be 1 - 2 orders of magnitude. The films also demonstrated potential to sense CO2 even though this could only be achieved using high concentrations of CO2 gas at temperatures of 300 °C and above. The sensor responses at 300 °C were estimated to be less than 1 order of magnitude.

Growth and characterization of thin oriented Co{sub 3}O{sub 4} (111) films obtained by decomposition of layered cobaltates Na{sub x}CoO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Buršík, Josef, E-mail: bursik@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68, Husinec-Řež 1001 (Czech Republic); Soroka, Miroslav, E-mail: soroka@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68, Husinec-Řež 1001 (Czech Republic); Kužel, Radomír, E-mail: kuzel@karlov.mff.cuni.cz [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Praha 2 (Czech Republic); Mika, Filip, E-mail: filip.mika@isibrno.cz [Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, v.v.i., Královopolská 147, 612 64 Brno (Czech Republic)

2015-07-15

The formation and structural characterization of highly (111)-oriented Co{sub 3}O{sub 4} films prepared by a novel procedure from weakly (001)-oriented Na{sub x}CoO{sub 2} is reported. The Na{sub x}CoO{sub 2} films were deposited on both single crystal and amorphous substrates by chemical solution deposition (CSD) method and crystallized at 700 °C. Subsequently they were transformed into (111)-oriented Co{sub 3}O{sub 4} phase during post-growth annealing at 900 °C. The degree of preferred orientation in Co{sub 3}O{sub 4}, which was determined by phi-scan and pole figure measurements, depends on the content of Na in the starting Na{sub x}CoO{sub 2} phase. Surface morphology of the films was investigated using electron microscopy and atomic force microscopy. - Graphical abstract: Structure of growth twins and possible O{sup 2−} stacking sequences in (111)-oriented Co{sub 3}O{sub 4} thin films on α-Al{sub 2}O{sub 3}(001) prepared by chemical solution deposition through the transformation of (001)-oriented Na{sub x}CoO{sub 2} thin film. - Highlights: • Single phase Co{sub 3}O{sub 4} thin films was prepared by means of chemical solution deposition. • Conditions for γ-Na{sub x}CoO{sub 2} to Co{sub 3}O{sub 4} transformation were optimized. • Growth twinning of Co{sub 3}O{sub 4} films due to two possible O{sup 2−} stacking sequences. • Growth with (pseudo)epitaxial relation Co{sub 3}O{sub 4} (111)[−121]//α-Al{sub 2}O{sub 3} (001)[10−10].

Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

2013-11-01

Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

Laser deposition of SnO2 thin films by continuous CO2 laser and their characterizations

International Nuclear Information System (INIS)

Kayed, K.; Awad, F.; Saiof, F.

2003-01-01

There are wide uses of tin oxide thin films, especially in the field of transparent conductors, solar cells, gas sensors and piezoelectric materials. Laser deposition is considered one of the most important techniques followed to obtain these films. In this research, we developed a technique to obtain homogeneous thin films of tin oxide depending on vaporization of pile targets of this oxide by continuous CO 2 laser in the atmosphere, with a fan which guarantees obtaining homogenous films. Some of these films were annealed in different conditions. The optical microscope images revealed the presence of high degree of homogeneity, while the x-ray study showed different crystallization grain orientations which depend on the preparation conditions. The preferred direction is (110). The optical absorption gives information about the value of the effective band gal for the samples before and after thermal annealing. We have found that some films E g =3.2 eV before annealing, and after long annealing they have E g =1.3 eV. In addition, the hard annealed thin films reveal anisotropy in the optical and electrical characteristics, they have different absorption coefficients in two perpendicular directions, also there is an electrical resistance anisotropy along these two directions especially after hard annealing. The E b was 0.73 eV before annealing, it became 0.37 eV for one direction and 0.32 eV for the other direction. (Authors)

Characterisation of magnetron sputtered SmCo5 thin films

International Nuclear Information System (INIS)

Wang, Y.; Sood, D.K.; Kothari

1999-01-01

SmCo 5 thin films were deposited using DC magnetron sputtering on single crystal silicon substrate with chromium and SiO 2 top layers. Deposition was carried out at three different substrate temperatures: room temperature, 400 deg C and 600 deg C. Films were characterised by using Rutherford Backscattering Spectroscopy (RBS), X-ray Diffraction (XRD), Secondary Ion Mass Spectrometry (SIMS) and SQUID magnetometer. RBS analysis indicated that the films have excellent stoichiometry with the Sm to Co ratio of 1:5. This analysis also showed that the films deposited or annealed at high temperatures (≥600 deg C) indicated significant inter-diffusion at the interface between the barrier layer and the film. Oxygen was found to be the major impurity in the films. XRD data indicated that the films formed 1:5 and 2:17 phases under different deposition conditions. The preliminary studies of these films using magnetic force microscopy revealed the presence of magnetic domains

Quantum interference effects in [Co/Bi]n thin films

Directory of Open Access Journals (Sweden)

Athanasopoulos P.

2014-07-01

Full Text Available Magnetoconductivity (MC, Δσ(Β, and Hall coefficient, RH(B, measurements have been performed in polycrystalline thin films of Bi(15nm, Bi(10nm/Co(1nm/Bi(10nm trilayer and [Co(0.7nm/Bi(2nm]10 multilayer, grown by magnetron scattering. The temperature dependence of RH(B curves reveal the existence of a second conduction channel below 250K, that can be assigned to surface states. MC measurements between ±0.4T show at 5K an interplay between weak-antilocalization (WAL in Bi and Bi/Co/Bi films and weal-localization (WL in [Co/Bi]10 multilayer.

Pr and Gd co-doped bismuth ferrite thin films with enhanced

Indian Academy of Sciences (India)

Pr and Gd co-modified Bi0.95−PrGd0.05FeO3 ( = 0.00, 0.05, 0.10) (BPGFO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates were prepared by a sol-gel together with spin coating technique. A detailed study of electrical and magnetic properties of these thin films is reported. X-ray diffraction analysis shows that, with an ...

Phase transformation of the brownmillerite SrCoO{sub 2.5} thin film through alkaline water electrolysis

Energy Technology Data Exchange (ETDEWEB)

Tambunan, Octolia Togibasa; Lee, Min Young; Kim, Deok Hyeon; Parwanta, Kadek Juliana; Jung, Chang Uk [Hankuk University of Foreign Studies, Yongin (Korea, Republic of)

2014-06-15

A phase transformation from insulating brownmillerite SrCoO{sub 2.5} to conducting perovskite SrCoO{sub 3} through electrochemical oxidation has been demonstrated for thin films of SrCoO{sub x} on a SrTiO{sub 3} (001) substrate. The cobalt-oxide film strongly favors the brownmillerite phase of SrCoO{sub 2.5} instead of the perovskite phase of SrCoO{sub 3} on a SrTiO{sub 3} (001) substrate due to its low lattice mismatch. Therefore, the phase transformation has its own retention. The alkaline water electrolysis occurs between the copper cathode and the SrCoO{sub 2.5} film anode. The H{sup +} ions are attracted to the cathode and generate H{sub 2} gas. The OH{sup -} ions are attracted to the film's surface and generate a rich amount of oxygen to fill the oxygen vacancy channel of brownmillerite SrCoO{sub 2.5}. The phase transformation was verified from the change in the out-of-plane lattice constant and the change in the resistivity of the electrolyzed film.

Synthesis, structure and optical properties of thin films from GeS{sub 2}–In{sub 2}S{sub 3} system deposited by thermal co-evaporation

Energy Technology Data Exchange (ETDEWEB)

Todorov, R., E-mail: rossen@iomt.bas.bg [Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Petkov, K. [Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Kincl, M. [Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6 (Czech Republic); Černošková, E. [Faculty of Chemical Technology, University of Pardubice, Studentská 84, 532 10 Pardubice (Czech Republic); Vlček, Mil.; Tichý, L. [Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6 (Czech Republic)

2014-05-02

This paper deals with the properties of the glasses and thin films from multi-component chalcogenide prepared by co-evaporation technique. The thin chalcogenide layers from GeS{sub 2}–In{sub 2}S{sub 3} system were deposited by thermal co-evaporation of GeS{sub 2} and In{sub 2}S{sub 3}. Using X-ray microanalysis it was found that the film compositions are closed to the expected ones. X-ray diffraction analysis shows that the thin films deposited by co-evaporation are amorphous. The refractive index, n and the optical band gap, E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The thin film's structure was investigated by infrared spectroscopy. It was found that the photo-induced optical changes decrease with increase of indium content while significant thermo-induced changes in the optical properties and structure were observed at 14 at.% indium. The infrared spectra demonstrated high transmittance of the thin films in the range 4000–500 cm{sup −1}. The far-infrared spectra indicated that the indium participates in the glass network of the layers from Ge–S–In system in four coordinated InS{sub 4/2}{sup −} tetrahedral and six-coordinated InS{sub 6/2}{sup 3−} octahedral units. The changes in infrared spectra after annealing of the thin films evidence an increase of population of ethane-like S{sub 3}Ge–GeS{sub 3} units and/or structural or phase change of indium contain units. - Highlights: • The thin layers from GeS{sub 2}–In{sub 2}S{sub 3} system were deposited by thermal co-evaporation. • The photo-induced optical changes decrease with increase of indium content. • The thermo-induced changes in the optical properties and structure were investigated. • The structure of the thin films was investigated by infrared spectroscopy.

A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

International Nuclear Information System (INIS)

Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

2012-01-01

Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Fabrication and evaluation of green-light emitting Ta2O5:Er, Ce co-sputtered thin films

Directory of Open Access Journals (Sweden)

K. Miura

2015-01-01

Full Text Available Erbium and cerium co-doped tantalum-oxide (Ta2O5:Er, Ce thin films were fabricated using radio-frequency co-sputtering of Ta2O5, Er2O3, and CeO2 for the first time. Enhanced green-light emission due to Er3+ that seems to be sensitized by Ce3+ was observed from the film annealed at 900 °C for 20 min. From XRD measurements of the films, the β-Ta2O5 (orthorhombic, δ-Ta2O5 (hexagonal, and (201 Ta2O5 phases seem to be very important for obtaining green PL from them. Such Ta2O5:Er, Ce co-sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel green-light-emitting devices, and they will also be used as multi-functional coating films that can work both as anti-reflection and down-conversion films for realizing high-efficiency silicon solar cells.

Nanocrystalline Cobalt-doped SnO2 Thin Film: A Sensitive Cigarette Smoke Sensor

Directory of Open Access Journals (Sweden)

Patil Shriram B.

2011-11-01

Full Text Available This article discusses a sensitive cigarette smoke sensor based on Cobalt doped Tin oxide (Co-SnO2 thin films deposited on glass substrate by a conventional Spray Pyrolysis technique. The Co-SnO2 thin films have been characterized by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM and Energy Dispersive X-ray Spectroscopy (EDAX. The XRD spectrum shows polycrystalline nature of the film with a mixed phase comprising of SnO2 and Co3O4. The SEM image depicts uniform granular morphology covering total substrate surface. The compositional analysis derived using EDAX confirmed presence of Co in addition to Sn and O in the film. Cigarette smoke sensing characteristics of the Co-SnO2 thin film have been studied under atmospheric condition at different temperatures and smoke concentration levels. The sensing parameters such as sensitivity, response time and recovery time are observed to be temperature dependent, exhibiting better results at 330 oC.

Photochemical deposition of NiCoO x thin films from Ni/Co heteronuclear triketonate complexes

International Nuclear Information System (INIS)

Buono-Core, G.E.; Tejos, M.; Cabello, G.; Guzman, N.; Hill, R.H.

2006-01-01

UV light irradiation of thin films of a polyketonate Ni/Co heteronuclear complex, NiCo(DBA) 2 [DBA, dibenzoylacetone)], spin coated on Si(1 0 0) substrates produced NiCoO x mixed oxides as amorphous films. On annealing at 600 deg. C under air, the mixed oxide film decomposed to NiO and CoO as indicated by XRD measurements. The morphology of the as-deposited films was examined by AFM analysis showing a smooth surface with low rms roughness values. The ratio of Ni/Co (1.08) present in the film reflects the stoichiometry in the starting compound within the experimental error, as shown by XPS analysis. The large amount of carbon (20.8%) detected on the surface of the film may be due to the presence of phenyl rings in the precursor complex

Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

International Nuclear Information System (INIS)

Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

2015-01-01

The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nm2 substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

Soft magnetic properties and damping parameter of (FeCo-Al alloy thin films

Directory of Open Access Journals (Sweden)

Isao Kanada

2017-05-01

Full Text Available For high frequency device applications, a systematic study of the soft magnetic properties and magnetization dynamics of (FeCo-Al alloy thin films has been carried out. A low effective damping parameter αeff of 0.002 and a high saturation magnetization of about 1,800 emu/cc are obtained at y=0.2∼0.3 for (Fe1-yCoy98Al2 alloy thin films deposited onto fused silica and MgO(100 at an ambient temperature during deposition. Those films are of the bcc structure with the orientation normal to the film plane. They possess a columnar structure, grown along the film normal. The column width is found to be about 20 nm for y=0.25. It is concluded that the (FeCo-Al thin films with a damping parameter as low as 0.002 and high saturation magnetization of about 1,800 emu/cc have been successfully fabricated, and that they are potential for future high frequency device applications.

Growth and in-plane magnetic anisotropy of inverse spinel Co{sub 2}MnO{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Taeyeong; Kim, Jaeyeong [Pohang University of Science and Technology, Pohang (Korea, Republic of); Song, Jonghyun [Chungnam National University, Daejeon (Korea, Republic of)

2014-11-15

Epitaxial Co{sub 2}MnO{sub 4} thin films were grown on Nb(0.1wt.)-doped SrTiO{sub 3} single-crystal substrates with (100) and (110) crystal orientations by using pulsed laser deposition. Their crystal structures and magnetic properties were investigated. Both samples exhibited ferrimagnetic transitions with enhanced transition temperatures. Isotropic M-H loops were observed on the in-plane surface of Co{sub 2}MnO{sub 4}(00l) grown on Nb(0.1wt)-doped SrTiO{sub 3}(100). Strong magnetic anisotropy was observed on the in-plane surface for Co{sub 2}MnO{sub 4} (ll0) grown on Nb(0.1wt)-doped SrTiO{sub 3}(110). A magnetic easy axis existed along the elongated tetragonal direction. This was attributed to the strong interplay between the spin and lattice degrees of freedom in the Co{sub 2}MnO{sub 4} thin film.

Preparation and thermoelectric properties of RF co-sputtered CoSb{sub 3} skutteruddite thin films

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz [University of Science and Technology, Daejeon (Korea, Republic of); Han, Seungwoo [Korea Institute of Machinery and Materials, Daejeon (Korea, Republic of); University of Science and Technology, Daejeon (Korea, Republic of)

2014-11-15

Various skutterudites have been under investigation because of their potential application in thermoelectric materials and devices. These studies indicate that bulk materials with a skutterudite type structure show reasonable thermoelectric behaviors at elevated temperatures, which make them suitable for high-temperature thermoelectric applications. The results of thermoelectric-property measurements on skutterudite-phase CoSb{sub 3} thin films are presented in this study in order to extend the bulk material concept to micro-device applications by using thin film deposition technology. Thin films are deposited on oxidized silicon substrates by using the RF co-sputtering method. The film's composition is found to depend strongly on the deposition conditions. The temperature at which the deposited films transition from an amorphous state to a crystalline state has been reported to be about 153 .deg. C. Therefore, some experiments are performed with the substrate temperature kept at 200 .deg. C to obtain polycrystalline films. The crystal structure of the film is evaluated by using x-ray diffraction (XRD) measurements. Energy dispersive spectroscopy (EDS) is used to determine the film's composition whereas the surface morphology and the thickness are investigated and measured by using scanning electron microscopy (SEM). Finally, the thermoelectric properties, namely, the electrical resistivity and the Seebeck coefficient, are used to calculate the power factor of the deposited thin films and, their variations with temperature are measured. We report a maximum power factor of 0.41 mW/mK{sup 2} for the film deposited at a 200 .deg. C substrate temperature.

Resistance switching in epitaxial SrCoO{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk, E-mail: cu-jung@hufs.ac.kr [Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of); Kim, Yeon Soo; Park, Bae Ho [Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-791 (Korea, Republic of); Jeong, Huiseong; Park, Ji-Yong [Department of Physics and Division of Energy System Research, Ajou University, Suwon 443-749 (Korea, Republic of); Cho, Myung Rae; Park, Yun Daniel [Department of Physics and Astronomy and Center for Subwavelength Optics, Seoul National University, Seoul 151-747 (Korea, Republic of); Choi, Woo Seok [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Dong-Wook [Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of); Jin, Hyunwoo; Lee, Suyoun [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong [Department of Material Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)

2014-08-11

We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3−δ}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

Structural, optical and magnetic properties of nanocrystalline Co-doped ZnO thin films grown by sol-gel

Energy Technology Data Exchange (ETDEWEB)

Kayani, Zohra Nazir; Shah, Iqra; Zulfiqar, Bareera; Sabah, Aneeqa [Lahore College for Women Univ., Lahore (Pakistan); Riaz, Saira; Naseem, Shahzad [Univ. of the Punjab, Lahore (Pakistan). Centre of Excellence in Solid State Physics

2018-04-01

Cobalt-doped ZnO thin films have been deposited using a sol-gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co{sup 2+} ion takes the place of a Zn{sup 2+} ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

International Nuclear Information System (INIS)

Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

2016-01-01

CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

Science.gov (United States)

Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

2014-11-01

The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

Science.gov (United States)

Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

2018-04-01

ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

Directory of Open Access Journals (Sweden)

Pei-Chung Lin

2016-08-01

Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

Science.gov (United States)

Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

2018-04-01

Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

Gigantic transverse voltage induced via off-diagonal thermoelectric effect in CaxCoO2 thin films

Science.gov (United States)

Takahashi, Kouhei; Kanno, Tsutomu; Sakai, Akihiro; Adachi, Hideaki; Yamada, Yuka

2010-07-01

Gigantic transverse voltages exceeding several tens volt have been observed in CaxCoO2 thin films with tilted c-axis orientation upon illumination of nanosecond laser pulses. The voltage signals were highly anisotropic within the film surface showing close relation with the c-axis tilt direction. The magnitude and the decay time of the voltage strongly depended on the film thickness. These results confirm that the large laser-induced voltage originates from a phenomenon termed the off-diagonal thermoelectric effect, by which a film out-of-plane temperature gradient leads to generation of a film in-plane voltage.

Magnetic properties and high frequency characteristics of FeCoN thin films

Directory of Open Access Journals (Sweden)

Tae-Jong Hwang

2016-05-01

Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

Growth and structure of Co/Au magnetic thin films

International Nuclear Information System (INIS)

Marsot, N.

1999-01-01

We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

Transport properties and pinning analysis for Co-doped BaFe2As2 thin films on metal tapes

Science.gov (United States)

Xu, Zhongtang; Yuan, Pusheng; Fan, Fan; Chen, Yimin; Ma, Yanwei

2018-05-01

We report on the transport properties and pinning analysis of BaFe1.84Co0.16As2 (Ba122:Co) thin films on metal tapes by pulsed laser deposition. The thin films exhibit a large in-plane misorientation of 5.6°, close to that of the buffer layer SrTiO3 (5.9°). Activation energy U 0(H) analysis reveals a power law relationship with field, having three different exponents at different field regions, indicative of variation from single-vortex pinning to a collective flux creep regime. The Ba122:Co coated conductors present {{T}{{c}}}{{onset}} = 20.2 K and {{T}{{c}}}{{zero}} = 19.0 K along with a self-field J c of 1.14 MA cm‑2 and an in-field J c as high as 0.98 and 0.86 MA cm‑2 up to 9 T at 4.2 K for both major crystallographic directions of the applied field, promising for high field applications. Pinning force analysis indicates a significant enhancement compared with similar Ba122:Co coated conductors. By using the anisotropic scaling approach, intrinsic pinning associated with coupling between superconducting blocks can be identified as the pinning source in the vicinity of H//ab, while for H//c random point defects are likely to play a role but correlated defects start to be active at high temperatures.

A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

Energy Technology Data Exchange (ETDEWEB)

Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Synthesis, characterization and application of Co doped TiO2 multilayer thin films

Science.gov (United States)

Khan, M. I.

2018-06-01

To use the visible portion of solar light, 2% cobalt doped TiO2 (Co: TiO2) multilayer thin films having 1, 2, 3 and 4 stacked layers have been deposited on FTO substrates using spray pyrolysis technique. XRD results show that 1 and 2 layers of films have anatase phase. Brookite phase has been appeared at the 3 and 4 layered films. The average grain size of 1, 2, 3 and 4 layers of films are 14.4, 23.5, 29.7 and 33.6 nm respectively. UV-Vis results show that 4th layer film has high absorption in the visible region. The calculated Eg of 1, 2, 3 and 4 layers is 3.54, 3.42, 3.30 and 3.03 eV respectively. The calculated average sheet resistivity of 1, 2, 3 and 4 layers of films is 7.68 × 104, 4.54 × 104, 8.85 × 103 and 7.95 × 102 (ohm-m) respectively, according to four point probe technique. Solar simulator results show that highest solar conversion efficiency (5.6%) has been obtained by using 3 stacked layers photoanode. This new structure in the form of stack layers provides a way to improve the efficiency of optoelectronic devices.

Characterization of Ag-doped vanadium oxide (AgxV2O5) thin film for cathode of thin film battery

International Nuclear Information System (INIS)

Hwang, H.S.; Oh, S.H.; Kim, H.S.; Cho, W.I.; Cho, B.W.; Lee, D.Y.

2004-01-01

The effect of silver co-sputtering on the characteristics of amorphous V 2 O 5 films, grown by dc reactive sputtering, is investigated. The co-sputtering process influences the growth mechanism as well as the characteristics of the V 2 O 5 films. X-ray diffraction (XRD), Inductively coupled plasma-atomic emission spectrometry (ICP-AES), field emission-scanning electron microscopy (FE-SEM), Fourier transform infrared spectrometry (FT-IR) and X-ray photoelectron spectrometry (XPS) results indicate that the microstructure of the V 2 O 5 films is affected by the rf power of the co-sputtered silver. In addition, an all-solid-state thin film battery with full cell structure of Li/LiPON/Ag x V 2 O 5 /Pt has been fabricated. It is found that the silver co-sputtered V 2 O 5 cathode film exhibits better cycle performance than an undoped one

High-permeance crosslinked PTMSP thin-film composite membranes as supports for CO2 selective layer formation

Directory of Open Access Journals (Sweden)

Stepan D. Bazhenov

2016-10-01

Full Text Available In the development of the composite gas separation membranes for post-combustion CO2 capture, little attention is focused on the optimization of the membrane supports, which satisfy the conditions of this technology. The primary requirements to the membrane supports are concerned with their high CO2 permeance. In this work, the membrane supports with desired characteristics were developed as high-permeance gas separation thin film composite (TFC membranes with the thin defect-free layer from the crosslinked highly permeable polymer, poly[1-(trimethylsilyl-1-propyne] (PTMSP. This layer is insoluble in chloroform and can be used as a gutter layer for the further deposition of the СО2-selective materials from the organic solvents. Crosslinking of PTMSP was performed using polyethyleneimine (PEI and poly (ethyleneglycol diglycidyl ether (PEGDGE as crosslinking agents. Optimal concentrations of PEI in PTMSP and PEGDGE in methanol were selected in order to diminish the undesirable effect on the final membrane gas transport characteristics. The conditions of the kiss-coating technique for the deposition of the thin defect-free PTMSP-based layer, namely, composition of the casting solution and the speed of movement of the porous commercial microfiltration-grade support, were optimized. The procedure of post-treatment with alcohols and alcohol solutions was shown to be crucial for the improvement of gas permeance of the membranes with the crosslinked PTMSP layer having thickness ranging within 1–2.5 μm. The claimed membranes showed the following characteristics: CO2 permeance is equal to 50–54 m3(STP/(m2 h bar (18,500–20,000 GPU, ideal CO2/N2 selectivity is 3.6–3.7, and their selective layers are insoluble in chloroform. Thus, the developed high-permeance TFC membranes are considered as a promising supports for further modification by enhanced CO2 selective layer formation. Keywords: Thin-film composite membrane

Terahertz conductivity measurement of FeSe0.5Te0.5 and Co-doped BaFe2As2 thin films

International Nuclear Information System (INIS)

Nakamura, D.; Akiike, T.; Takahashi, H.; Nabeshima, F.; Imai, Y.; Maeda, A.; Katase, T.; Hiramatsu, H.; Hosono, H.; Komiya, S.; Tsukada, I.

2011-01-01

We investigated the THz conductivity of FeSe 0.5 Te 0.5 and Ba (Fe 2-x Co x )As 2 thin films. We estimated the superconducting gap energy values. We found anomolous conductivity spectrum in the antiferromagnetic phase. The terahertz (THz) conductivity of FeSe 0.5 Te 0.5 ('11'-type) and Co-doped BaFe 2 As 2 ('122'-type) thin films are investigated. For '11'-type, the frequency dependence of the complex conductivity can be understood as that of BCS-type superconductor near the superconducting gap energy, and we estimated the superconducting gap energy to be 0.6 meV. For '122'-type, we estimated the superconducting gap energy to be 2.8 meV, which is considered to be the superconducting gap opened at the electron-type Fermi surface near the M point.

Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

2015-01-01

The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nm2} substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

New Method for Fabrication of Co3O4 Thin Film Sensors: Structural, Morphological and Optoelectronic Properties

Directory of Open Access Journals (Sweden)

Vikas PATIL

2011-05-01

Full Text Available Nanocrystalline Co3O4 thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH3 gas-sensing technology. In particular, spectrophotometric and conductivity measurements have been performed in order to determine the optical and electrical properties of Co3O4 thin films. The structure and the morphology of such material have been investigated by X ray diffraction and Scanning electron microscopy. The X-ray diffraction studies confirmed that the films grown by this technique have good crystalline cubic spinel structure and present a random orientation. The morphology of the sol gel derived Co3O4 shows nanocrystalline grains with some overgrown clusters .The optical band gap has been determined from the absorption coefficient. We found that the optical band gap energy decreases from 2.58 eV to 2.07 eV with increasing annealing temperature between 400-700 oC. These mean that the optical quality of Co3O4 films is improved by annealing. The dc electrical conductivity of Co3O4 thin films were increased from 10-4 to 10-2(Ω cm-1 with increase in annealing temperature. The electron carrier concentration (n and mobility (μ of Co3O4 films annealed at 400-700 oC were estimated to be of the order of 2.4 to 4.5 x 1019 cm-3 and 5.2 to 7.0 x 10-5 cm2 V-1 s-1 respectively. It is observed that Co3O4 thin film annealing at 700 oC after deposition provide a smooth and flat texture suited for optoelectronic applications. Gas sensing properties showed that the Co3O4 films (at 700 oC were sensitive as well as fast in responding to NH3. A high sensitivity for ammonia indicates that the Co3O4 films are selective for this gas.

Growth dependent magnetization reversal in Co2MnAl full Heusler alloy thin films

Science.gov (United States)

Barwal, Vineet; Husain, Sajid; Behera, Nilamani; Goyat, Ekta; Chaudhary, Sujeet

2018-02-01

Angular dependent magnetization reversal has been investigated in Co2MnAl (CMA) full Heusler alloy thin films grown on Si(100) at different growth temperatures (Ts) by DC-magnetron sputtering. An M -shaped curve is observed in the in-plane angular (0°-360°) dependent coercivity (ADC) by magneto-optical Kerr effect measurements. The dependence of the magnetization reversal on Ts is investigated in detail to bring out the structure-property correlation with regards to ADC in these polycrystalline CMA thin films. This magnetization reversal ( M -shaped ADC behavior) is well described by the two-phase model, which is a combination of Kondorsky (domain wall motion) and Stoner Wohlfarth (coherent rotation) models. In this model, magnetization reversal starts with depinning of domain walls, with their gradual displacement explained by the Kondorsky model, and at a higher field (when the domain walls merge), the system follows coherent rotation before reaching its saturation following the Stoner Wohlfarth model. Further, the analysis of angular dependent squareness ratio (Mr/Ms) indicates that our films clearly exhibited twofold uniaxial anisotropy, which is related to self-steering effect arising due to the obliquely incident flux during the film-growth.

Carbon isotope exchange between gaseous CO2 and thin solution films: Artificial cave experiments and a complete diffusion-reaction model

Science.gov (United States)

Hansen, Maximilian; Scholz, Denis; Froeschmann, Marie-Louise; Schöne, Bernd R.; Spötl, Christoph

2017-08-01

Speleothem stable carbon isotope (δ13C) records provide important paleoclimate and paleo-environmental information. However, the interpretation of these records in terms of past climate or environmental change remains challenging because of various processes affecting the δ13C signals. A process that has only been sparsely discussed so far is carbon isotope exchange between the gaseous CO2 of the cave atmosphere and the dissolved inorganic carbon (DIC) contained in the thin solution film on the speleothem, which may be particularly important for strongly ventilated caves. Here we present a novel, complete reaction diffusion model describing carbon isotope exchange between gaseous CO2 and the DIC in thin solution films. The model considers all parameters affecting carbon isotope exchange, such as diffusion into, out of and within the film, the chemical reactions occurring within the film as well as the dependence of diffusion and the reaction rates on isotopic mass and temperature. To verify the model, we conducted laboratory experiments under completely controlled, cave-analogue conditions at three different temperatures (10, 20, 30 °C). We exposed thin (≈0.1 mm) films of a NaHCO3 solution with four different concentrations (1, 2, 5 and 10 mmol/l, respectively) to a nitrogen atmosphere containing a specific amount of CO2 (1000 and 3000 ppmV). The experimentally observed temporal evolution of the pH and δ13C values of the DIC is in good agreement with the model predictions. The carbon isotope exchange times in our experiments range from ca. 200 to ca. 16,000 s and strongly depend on temperature, film thickness, atmospheric pCO2 and the concentration of DIC. For low pCO2 (between 500 and 1000 ppmV, as for strongly ventilated caves), our time constants are substantially lower than those derived in a previous study, suggesting a potentially stronger influence of carbon isotope exchange on speleothem δ13C values. However, this process should only have an

Pr and Gd co-doped bismuth ferrite thin films with enhanced ...

Indian Academy of Sciences (India)

in Pr content, the crystal structures of BPGFO thin films retain rhombohedral (R3c) symmetry accompanied by structure distortion. ... Pr and Gd co-modified BiFeO3 thin film; ferroelectric properties; sol-gel. 1. Introduction. In recent years, great attention has been paid to single- phase BiFeO3 (BFO) multiferroic materials ...

Sensors of the gas CO in thin film of SnO{sub 2}:Cu; Sensores del gas CO en pelicula delgada de SnO{sub 2}:Cu

Energy Technology Data Exchange (ETDEWEB)

Tirado G, S.; Sanchez Z, F. E., E-mail: tirado@esfm.ipn.mx [IPN, Escuela Superior de Fisica y Matematicas, Unidad Profesional Adolfo Lopez Mateos, San Pedro Zacatenco, 07738 Mexico D. F. (Mexico)

2011-10-15

Thin films of SnO{sub 2}:Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO{sub 2} were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO{sub 2}:Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO{sub 2}:Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

LiCoO.sub.2./sub. thin-film cathodes grown by RF sputtering

Czech Academy of Sciences Publication Activity Database

Prachařová, Jarmila; Přidal, Jiří; Bludská, Jana; Jakubec, Ivo; Vorlíček, Vladimír; Málková, Zuzana; Makris, D. T.; Giorgi, R.; Jastrabík, Lubomír

2002-01-01

Roč. 108, - (2002), s. 204-212 ISSN 0378-7753 R&D Projects: GA MŠk ME 305 Institutional research plan: CEZ:AV0Z1010914 Keywords : LiCoO 3 * thin-film cathodes * Li- ion batteries Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.777, year: 2002

Solar control on irradiated Ta2O2 thin films

International Nuclear Information System (INIS)

Baydogan, N. D.; Zayim, E. Oe.

2007-01-01

Thin films consisting of Ta 2 O 5 have been used in industry in applications related to thin-film capacitors, optical waveguides, and antireflection coatings on solar cells. Ta 2 O 5 films are used for several special applications as highly refractive material and show different optical properties depending on the deposition methods. Sol-gel technique has been used for the preparation of Ta 2 O 5 thin films. Ta 2 O 5 thin films were prepared by sol-gel proses on glass substrates to obtain good quality films. These films were exposed to gamma radiation from Co-60 radioisotope. Ta 2 O 5 coated thin films were placed against the source and irradiated for 8 different gamma doses; between 0.35 and 21.00 kGy at room temperature. Energetic gamma ray can affect the samples and change its colour. On the other hand some of the Ta 2 O 5 coated thin films were irradiated with beta radiation from Sr-90 radioisotope. The effect of gamma irradiation on the solar properties of Ta 2 O 5 films is compared with that of beta irradiation. The solar properties of the irradiated thin films differ significantly from those of the unirradiated ones. After the irradiation of the samples transmittance and reflectance are measured for solar light between 300 and 2100 nm, by using Perkin Elmer Lambda 9 UV/VIS/NIR Spectrophotometer. Change in the direct solar transmittance, reflectance and absorptance with absorbed dose are determined. Using the optical properties, the redistribution of the absorbed component of the solar radiation and the shading coefficient (SC) are calculated as a function of the convective heat-transfer coefficient. Solar parameters are important for the determination of the shading coefficient. When the secondary internal heat transfer factor (qi), direct solar transmittance (□ e ), and solar factor (g) are known, it is possible to determine shading coefficient via the dose rates. The shading coefficient changes as the dose rate is increased. In this study, the shading

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo; Zheng, Tao; Sun, Ce; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Quevedo-Lopez, Manuel; Gnade, Bruce E.

2017-01-01

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed

Thin Film Microbatteries

International Nuclear Information System (INIS)

Dudney, Nancy J.

2008-01-01

aerosol spray coating, for one or more components of the battery. The active materials used for the thin film cathodes and anodes are familiar intercalation compounds, but the microstructures and often the cycling properties of the thin films may be quite distinct from those of battery electrodes formed from powders. The thin film cathodes are dense and homogeneous with no added phases such as binders or electrolytes. When deposited at ambient temperatures, the films of cathodes, such as LiCoO 2 , V 2 O 5 , LiMn 2 O4 , LiFePO 4 are amorphous or nanocrystalline. But even in this form, they often act as excellent cathodes with large specific capacities and good stability for hundreds to thousands of cycles. Annealing the cathode films at temperatures of 300 to 800 C may be used to induce crystallization and grain growth of the desired intercalation compound. Crystallizing the cathode film generally improves the Li chemical diffusivity in the electrode material, and hence the power delivered by the battery, by 1-2 orders of magnitude. The microstructure is also tailored by the deposition and heat treatment. Figure 3 shows a fracture edge of an annealed LiCoO 2 cathode film on an alumina substrate. The columnar microstructure, which is typical of a vapor deposited film, sinters at high temperatures leaving small fissures between the dense columns. Such crystalline films also may have a preferred crystallographic orientation. For LiCoO 2 films the crystallographic texture differs for films deposited by sputtering versus pulse laser ablation processes. To improve the manufacturability of the thin film batteries, it would be beneficial to eliminate or minimize the temperature or duration of the annealing step. Several efforts have lead to low temperature fabrication of thin film batteries on polyimide substrates, but the battery capacity and rate are lower than those treated at high temperatures. For the battery anode, many designs use a vapor-deposited metallic lithium film as

Hall effect and the magnetotransport properties of Co2MnSi1-xAlx Heusler alloys

Science.gov (United States)

Prestigiacomo, Joseph C.; Young, David P.; Adams, Philip W.; Stadler, Shane

2014-01-01

We have investigated the transport properties of the quaternary Heusler alloys Co2MnSi1-xAlx (0≤x≤1), which have been theoretically predicted to develop a half-metallic band structure as x →0. Resistivity versus temperature measurements as a function of Al concentration (x) revealed a systematic reduction in the residual resistivity ratio as well as a transition from weakly localized to half-metallic conduction as x →0. From measurements of the ordinary and anomalous Hall effects, the charge carrier concentration was found to increase, while the anomalous Hall coefficient decreased by nearly an order of magnitude with each sample as x →0 (Δx=0.25.). Scaling of the anomalous Hall effect with longitudinal resistivity reveals that both the skew-scattering and intrinsic contributions grow quickly as x →1, indicating that disorder and band-structure effects cause the large anomalous Hall effect magnitudes observed for Co2MnAl.

Structure and magnetization of Co4N thin film

Science.gov (United States)

Pandey, Nidhi; Gupta, Mukul; Gupta, Rachana; Rajput, Parasmani; Stahn, Jochen

2018-02-01

In this work, we studied the local structure and the magnetization of Co4N thin films deposited by a reactive dc magnetron sputtering process. The interstitial incorporation of N atoms in a fcc Co lattice is expected to expand the structure. This expansion yields interesting magnetic properties e.g. a larger magnetic moment (than Co) and a very high value of spin polarization ratio in Co4N . By optimizing the growth conditions, we prepared Co4N film having lattice parameter close to its theoretically predicted value. The N concentration was measured using secondary ion mass spectroscopy. Detailed magnetization measurements using bulk magnetization method and polarized neutron reflectivity confirm that the magnetic moment of Co in Co4N is higher than that of Co.

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

Science.gov (United States)

Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

2015-01-01

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

Directory of Open Access Journals (Sweden)

Chao-Ming Hsu

2015-05-01

Full Text Available High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

Room temperature deposition of perpendicular magnetic anisotropic Co{sub 3}Pt thin films on glass substrate

Energy Technology Data Exchange (ETDEWEB)

Chen, Yu-Shen; Dai, Hong-Yu; Hsu, Yi-Wei [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Ou, Sin-Liang, E-mail: slo@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan (China); Chen, Shi-Wei [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China)

2017-03-01

Co{sub 3}Pt alloy thin films were deposited on the glass substrate at room temperature (RT) and 300 °C, which showed high perpendicular magnetic anisotropy (PMA) and isotropy magnetic behaviors, respectively. Co{sub 3}Pt HCP (0002) planes grew along the substrate plane for the films deposited at RT. The easy axis [0001] was consequently vertical to the substrate surface and obtained the predominant PMA. Large magnetic domains and sharp boundary also supported high PMA in RT-deposited samples. On the other hand, the PMA was significantly decreased with increasing the deposition temperature from RT to 300 °C. Hard HCP(0002) and soft A1(111) co-existed in the film and the magnetic exchanged coupling between these two phases induced isotropy magnetic behavior. In addition, the various thicknesses (t) of the RT-deposited Co{sub 3}Pt films were deposited with different base pressures prior to sputtering. The Kerr rotation loops showed high PMA and out-of-plane squareness (S{sub ⊥}) of ~0.9 were found in low base pressure chamber. Within high base pressure chamber, Co{sub 3}Pt films just show magnetic isotropy behaviors. This study provides a fabrication method for the preparation of high PMA HCP-type Co{sub 3}Pt films on the glass substrate without any underlayer at RT. The results could be the base for future development of RT-deposited magnetic alloy thin film with high PMA. - Highlights: • Fabricated high perpendicular magnetic anisotropy Co{sub 3}Pt thin film on glass substrate. • Prepared HCP Co{sub 3}Pt thin film at room temperature. • The key to enhance the PMA of the Co{sub 3}Pt films. • Thinner film is good to fabricate PMA Co{sub 3}Pt thin films.

Temperature-dependent Gilbert damping of Co2FeAl thin films with different degree of atomic order

Science.gov (United States)

Kumar, Ankit; Pan, Fan; Husain, Sajid; Akansel, Serkan; Brucas, Rimantas; Bergqvist, Lars; Chaudhary, Sujeet; Svedlindh, Peter

2017-12-01

Half-metallicity and low magnetic damping are perpetually sought for spintronics materials, and full Heusler compounds in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler compound thin films, and theory has struggled to establish a fundamental understanding of the temperature-dependent Gilbert damping in these systems. Here we present a study of the temperature-dependent Gilbert damping of differently ordered as-deposited Co2FeAl full Heusler compound thin films. The sum of inter- and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states governs the Gilbert damping for the well-ordered phase, in contrast to the damping of partially ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room-temperature intrinsic damping observed for the well-ordered phase, provide fundamental insights into the physical origin of the Gilbert damping in full Heusler compound thin films.

Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

2007-01-01

Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

International Nuclear Information System (INIS)

Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

Co thin film with metastable bcc structure formed on GaAs(111 substrate

Directory of Open Access Journals (Sweden)

Minakawa Shigeyuki

2014-07-01

Full Text Available Co thin films are prepared on GaAs(111 substrates at temperatures ranging from room temperature to 600 ºC by radio-frequency magnetron sputtering. The growth behavior and the detailed resulting film structure are investigated by in-situ reflection high-energy electron diffraction and X-ray diffraction. In early stages of film growth at temperatures lower than 200 ºC, Co crystals with metastable A2 (bcc structure are formed, where the crystal structure is stabilized through hetero-epitaxial growth. With increasing the film thickness beyond 2 nm, the metastable structure starts to transform into more stable A1 (fcc structure through atomic displacements parallel to the A2{110} close-packed planes. The crystallographic orientation relationship between the A2 and the transformed A1 crystals is A1{111} || A2{110}. When the substrate temperature is higher than 400 ºC, Ga atoms of substrate diffuse into the Co films and a Co-Ga alloy with bcc-based ordered structure of B2 is formed.

Thin (111) oriented CoFe{sub 2}O{sub 4} and Co{sub 3}O{sub 4} films prepared by decomposition of layered cobaltates

Energy Technology Data Exchange (ETDEWEB)

Buršík, Josef, E-mail: bursik@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Soroka, Miroslav, E-mail: soroka@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Uhrecký, Róbert, E-mail: uhrecky@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Kužel, Radomír, E-mail: kuzel@karlov.mff.cuni.cz [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 5, 121 16 Praha 2 (Czech Republic); Mika, Filip, E-mail: filip.mika@isibrno.cz [Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, v.v.i., Královopolská 147, 612 64 Brno (Czech Republic); Huber, Štěpán, E-mail: stepan.huber@vscht.cz [University of Chemistry and Technology, Faculty of Chemical Technology, Technická 5, 166 28 Prague 6 (Czech Republic)

2016-07-15

Graphical abstract: Pole figures of NaCoO{sub 2} (left) and of CoFe{sub 2}O{sub 4} (right) films formed through the transformation of O3-type NaCoO{sub 2} phase in consequence of sodium deintercalation occurring at 800 °C. Films were prepared by chemical solution deposition on MgO(111) substrate. - Highlights: • Epitaxial Na(CoFe)O{sub 2} thin films by means of chemical solution deposition were prepared. • Oriented spinel films through transformation of Na(CoFe)O{sub 2} were obtained. • Orientation relation to MgO, SrTiO{sub 3} and Zr(Y)O{sub 2} substrates were determined. • Structural aspects of Na(CoFe)O{sub 2} → CoFe{sub 2}O{sub 4} transformation pathway were elucidated. - Abstract: The formation and structural characterization of highly (111)-oriented Co{sub 3}O{sub 4} and CoFe{sub 2}O{sub 4} films prepared by a novel procedure from 00l-oriented NaCoO{sub 2} and Na(CoFe)O{sub 2} is reported. The Na(CoFe)O{sub 2} films were deposited on MgO, SrTiO{sub 3}, LaAlO{sub 3}, and Zr(Y)O{sub 2} single crystals with (100) and (111) orientations by chemical solution deposition method and crystallized at 700 °C. Subsequently they were transformed into (111)-oriented spinel phase during post-growth annealing at 800–1000 °C. Morphology and structure of the films was investigated by means of scanning electron microscopy and X-ray diffraction. While all spinel films exhibit pronounced out-of-plane orientation irrespective of substrate, the rate of in-plane orientation strongly depend on lattice misfit values. Different epitaxial phenomena ranging from true one-to-one epitaxy to the existence of many-to-one epitaxy involving two or more orientations were determined by full 3D texture analysis.

Effect of Coulomb interactions and Hartree-Fock exchange on structural, elastic, optoelectronic and magnetic properties of Co{sub 2}MnSi Heusler: A comparative study

Energy Technology Data Exchange (ETDEWEB)

Lantri, T. [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria); Bentata, S., E-mail: sam_bentata@yahoo.com [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria); Bouadjemi, B.; Benstaali, W. [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria); Bouhafs, B. [Modelling and Simulation in Materials Science Laboratory, Djillali Liabès University of Sidi Bel-Abbès, 22000 Sidi Bel-Abbes (Algeria); Abbad, A. [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria); Modelling and Simulation in Materials Science Laboratory, Djillali Liabès University of Sidi Bel-Abbès, 22000 Sidi Bel-Abbes (Algeria); Zitouni, A. [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria)

2016-12-01

Using the first-principle calculations, we have investigated the structural, elastic, optoelectronic and magnetic properties of Co{sub 2}MnSi Heusler alloy. Based on the density functional theory (DFT) and hiring the full-potential linearized augmented plane wave (FP-LAPW) method, we have used five approaches: the Hybrid on-site exact exchange, the Local Spin Density Approximation (LSDA), the LSDA+U, the Generalized Gradient Approximation GGA and GGA+U; where the Hubbard on-site Coulomb interaction correction U is calculated by constraint local density approximation for Co and Mn atoms. Our results show that the highly-ordered Co{sub 2}MnSi alloy is a ductile, stiff and anisotropic material. It has a half-metallic ferromagnetic character with an integer magnetic moment of 5 µB which is in good agreement with the Slater-Pauling rule. - Highlights: • Each approach gives a half magnetic compound. • EECE gives the largest gap. • Elastic properties show a stiff, ductile and anisotropic material. • Electronic properties are similar for the five approaches. • Total magnetic moment is the same for the five approaches (5 µB).

Valence control of cobalt oxide thin films by annealing atmosphere

International Nuclear Information System (INIS)

Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

2011-01-01

The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

2013-01-01

The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

OpenAIRE

Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

2015-01-01

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the...

Laser deposition of SmCo thin film and coating on different substrates

International Nuclear Information System (INIS)

Allocca, L; Bonavolonta, C; Valentino, M; Giardini, A; Lopizzo, T; Morone, A; Verrastro, M F; Viggiano, V

2008-01-01

Thin films and coatings of permanent magnetic materials are very important for different electronic and micromechanical applications. This paper deals with the fabrication, using pulsed laser deposition (PLD) technique, of good quality magnetic SmCo thin films on polycarbonate, steel, silicon and amorphous quartz substrates, for low cost electronic applications like radio frequency identification (RFID) antennas and electromechanical devices for fuel feeding control in the automotive. X-ray fluorescence and magnetic scanning measurements using giant magneto-resistive (GMR) sensors have been performed to study the functional magnetic properties of the deposited thin films.

Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

Science.gov (United States)

Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

2013-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

Growth and characterization of textured YBaCo2O5+δ thin films grown on (001)-SrTiO3 via DC magnetron sputtering

International Nuclear Information System (INIS)

Galeano, V.; Arnache, O.; Supelano, I.; Vargas, C.A. Parra; Morán, O.

2016-01-01

Thin films of the layered cobaltite YBaCo 2 O 5+δ were successfully grown on (001)-oriented SrTiO 3 single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo 2 O 5+δ thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo 2 O 5+δ , the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo 2 O 5+δ thin films are grown on SrTiO 3 substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

Pulsed laser deposition of nanostructured Co-B-O thin films as efficient catalyst for hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Jadhav, H., E-mail: jadhav.hs2013@gmail.com [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Singh, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Patel, N.; Fernandes, R.; Gupta, S.; Kothari, D.C. [Department of Physics and National Centre for Nanosciences & Nanotechnology, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400098 (India); Miotello, A. [Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo, Trento (Italy); Sinha, S. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2016-11-30

Highlights: • Pulsed laser deposition was used to deposit Co-B-O film nanocatalyst. • Co-B-O NPs are well separated, stable and immobilized on film surface. • Catalytic H{sub 2} production was studied by hydrolysis of Sodium Borohydride. • Four times higher H{sub 2} production rate was recorded for Co-B-O film than Co-B-O powder. • High particle density, polycrystalline nature and good stability against agglomeration of Co NPs. - Abstract: Nanoparticles assembled Co-B-O thin film catalysts were synthesized by pulsed laser deposition (PLD) technique for hydrolysis of Sodium Borohydride (SBH). Surface morphology of the deposited films was investigated using SEM and TEM, while compositional analysis was studied using XPS. Structural properties of Co-B-O films were examined using XRD and HRTEM. Laser process is able to produce well separated and immobilized Co-B-O NPs on the film surface which act as active centers leading to superior catalytic activity producing hydrogen at a significantly higher rate as compared to bulk powder. Co-B-O thin film catalyst produces hydrogen at a maximum rate of ∼4400 ml min{sup −1} g{sup −1} of catalyst, which is four times higher than powder catalyst. PLD parameters such as laser fluence and substrate-target distance were varied during deposition in order to understand the role of size and density of the immobilized Co-B-O NPs in the catalytic process. Films deposited at 3–5 cm substrate-target distance showed better performance than that deposited at 6 cm, mainly on account of the higher density of active Co-B-O NPs on the films surface. Features such as high particle density, polycrystalline nature of Co NPs and good stability against agglomeration mainly contribute towards the superior catalytic activity of Co-B-O films deposited by PLD.

Structural, morphological and optical properties of LiCo0.5Ni0.45Ag0.05O2 thin films

Science.gov (United States)

Haider, Adawiya J.; AL-Rsool, Rusul Abed; AL-Tabbakh, Ahmed A.; Al-Gebori, Abdul Nasser M.; Mohamed, Aliaa

2018-05-01

Pulsed Laser Deposition (PLD) method has been successfully used for the synthesized of nano-crystalline cathode m aterial LiCo0.5Ni0.45Ag0.05O2 (LCNAO) thin film. LCNAO Ferromagnetic using pulsed Nd-YAG laser with wavelength (λ = 532 nm) and duration (10 ns) and energy fluence (1.4 J/cm2) with different substrate temperature (100, 200, 300) ˚C and O2 pressure at 10 mbar. The structural, morphological and optical properties of the films were determined by X-ray Diffraction (XRD), Scan Electron Microscopy (SEM), Atomic Force microscope (AFM) and UV-VIS spectroscopy respectively. It is observed that partial layer to spinel transformation takes place during post annealing and the average particle size of the LiCo0.5Ni0.45Ag0.05O2 is found to be (1-12) nm from SEM measurement. Finally the optical properties of the thin films have been studied at different Substrate temperature. It found the energy gap decreases from 4.2 to 3.8 eV when the substrate's temperature increasing from 100° C into 300 °C of the LCNAO films. These mean that the optical quality of LCNAO films is improved due to the increase in crystalline size and reduction of defect sites.

Composition and structural analysis of Sm-Co thin films on (100)Si

International Nuclear Information System (INIS)

Ghantasala, M.; Sood, D.K.; Mohan, S.

1998-01-01

Full text: The necessity of integration of magnetics with silicon processing technology became essential with the advent of Micro Electromechanical Systems (MEMS). The need to control the crystalline and magnetic properties of the magnetic thin films on silicon substrates has been the primary motivation for this work. The major objective of this work is to prepare the stoichiometric and crystalline SmCo 5 thin films with good magnetic properties on single crystal silicon substrate. We have prepared the SmCo think films on single crystal (100) silicon substrates using DC magnetron sputtering. Films have been prepared in pure argon as the sputter media at two different pressures 2 x 10 -2 torr and 2 x 10 3 torr with the substrates kept at room temperature, 500 and 700 deg C separately. These films have been characterised using RBS, XRD and SEM. RBS analysis showed that the films are nearly stoichiometric (1:4.9) and have significant amounts of oxygen as impurity. But XRD studies indicated that the as deposited films (at all substrate temperatures) are yet to form the crystalline structure. Some of the films have been subjected to rapid thermal annealing at two different temperatures at 800 and 1000 deg C for 30 secs in an effort to crystallise the films. RBS analysis of these films indicated that the room temperature and post annealed films at 1000 deg C resulted in considerable interdiffusion characteristics, whereas the high temperature deposited (500 and 700 deg C) and annealed films showed relatively very stable characteristics with minimal diffusion between the film and the substrate. XRD and SEM analysis of the films is in progress. The detailed results of these investigations will be presented

The Microstructures and Electrical Resistivity of (Al, Cr, TiFeCoNiOx High-Entropy Alloy Oxide Thin Films

Directory of Open Access Journals (Sweden)

Chun-Huei Tsau

2015-01-01

Full Text Available The (Al, Cr, TiFeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

CO2 laser treatment of As-S chalcogenide thin films

International Nuclear Information System (INIS)

Andriesch, A.M.; Bertolotti, M.; Ferrari, A.; Popesku, A.A.

1990-01-01

The changes of the refractive index of As 2 S 3 and As 2 S 5 films deposited on glass substrates upon CO 2 laser irradiation have been studied. The possibility of writing with the CO 2 laser a waveguiding channel in As 2 S 3 is demonstrated

Transparent conducting thin films by co-sputtering of ZnO-ITO targets

Energy Technology Data Exchange (ETDEWEB)

Carreras, Paz; Antony, Aldrin; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo Antonio; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

2010-04-15

Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67% as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Valence control of cobalt oxide thin films by annealing atmosphere

Energy Technology Data Exchange (ETDEWEB)

Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

2011-02-01

The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

High coercivity Sm-Co thin films from elemental Sm/Co multilayer deposition and their microstructural aspects

Energy Technology Data Exchange (ETDEWEB)

Krishnan, M. [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India); Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Predeep, P. [Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Sridhara Rao, D.V. [Defence Metallurgical Research Laboratories, Hyderabad 500058 (India); Prajapat, C.L.; Singh, M.R. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Barshilia, Harish C. [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India); Chowdhury, P., E-mail: pchowdhury@nal.res.in [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India)

2017-05-15

Hard magnetic thin films with high coercivity were fabricated by magnetron sputtering on MgO(100) and quartz substrates. The films were grown by depositing sequentially Sm and Co layers at an elevated substrate temperature of 500 °C. Subsequent post-annealing was carried out at various temperatures in range of 500–700 °C to form Sm-Co hard magnetic thin films. X-ray diffraction studies revealed the formation of randomly oriented SmCo{sub 5} crystallites on quartz substrate, whereas, a textured growth of Sm{sub 2}Co{sub 7} with strong (110) crystalline phases was observed on MgO substrate. Microstructural analyses were carried out using Transmission Electron Microscopy (TEM) for samples grown on MgO substrate at 650 °C and inferred the presence of high density planar defects along with large grain boundaries. Further microdiffraction studies confirmed the presence of SmCo{sub 3} as an impurity phase in the films. Magnetic hysteresis measurements indicate the square hysteresis behaviors with high coercivity value of 3.1 T and 2.7 T for 650 °C annealed samples on both MgO and quartz substrates, respectively. The origin of such high coercivity value was then correlated with pinning type of spin reversal mechanism as confirmed through the analyses of demagnetization curves. The magnetic force microscopy images for films on MgO substrate, annealed at 650 °C, revealed the presence of magnetic domains with size higher than 1 µm. The formed magnetic domains lacked well defined boundaries indicating an enhanced exchange coupling between the grain clusters. - Highlights: • Ewald technique in micromagnetic simulations with periodic boundary conditions. • Effect of micromagnetic parameters on hysteresis in exchange spring magnets. • Importance of the interface exchange coupling for hard-soft nanocomposites. • Geometry dependence of the optimal soft phase size in exchange spring magnets.

Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Ehsani, M.H., E-mail: Ehsani@semnan.ac.ir [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Mehrabad, M. Jalali [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Kameli, P. [Department of Physics, Isfahan University of technology, Isfahan 8415683111 (Iran, Islamic Republic of)

2016-11-01

In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films. - Graphical abstract: Simulation results of the cobalt particles tracing sputtered from the source to substrate with an external magnetic field. Convergence of the particles flux (left) and also the spiral motion of the cobalt particles (right) increase dramatically as they approach the substrate and NdFe35 magnet. - Highlights: • The external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. • Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. • The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. • To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field

Growth and characterisation of potentiostatically electrodeposited Cu2O and Cu thin films

International Nuclear Information System (INIS)

Wijesundera, R.P.; Hidaka, M.; Koga, K.; Sakai, M.; Siripala, W.

2006-01-01

Cuprous oxide and copper thin films were potentiostatically electrodeposited in an acetate bath. Voltammetric curves were used to investigate the growth parameters; deposition potential, pH and temperature of the bath. Deposition potential dependency on the structural, morphological, optical and electronic properties of the films were investigated by the X-ray diffraction measurements, scanning electron micrographs, absorption measurements and dark and light current-voltage characterisations. It was observed that single phase polycrystalline Cu 2 O can be deposited from 0 to - 300 mV Vs saturated calomel electrode (SCE) and co-deposition of Cu and Cu 2 O starts at - 400 mV Vs SCE. Further increase in deposition potential from - 700 mV Vs SCE produces single phase Cu thin films. Single phase polycrystalline Cu 2 O thin films with cubic grains of 1-2 μm can be possible within the very narrow potential domain around - 200 mV Vs SCE. Enhanced photoresponse in a photoelectrochemical cell is produced by the Cu 2 O thin film prepared at - 400 mV Vs SCE, where Cu is co-deposited with Cu 2 O with random distribution of Cu spheres on the Cu 2 O surface. This study reveals that a single deposition bath can be used to deposit both Cu and Cu 2 O separately and an admixture of Cu-Cu 2 O by controlling the deposition parameters

Plasma-assisted co-evaporation of {beta}-indium sulfide thin films

Energy Technology Data Exchange (ETDEWEB)

Kosaraju, Sreenivas; Marino, Joseph A.; Harvey, John A.; Wolden, Colin A. [Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

2006-05-05

This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of {beta}-In{sub 2}S{sub 3} thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H{sub 2}S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H{sub 2}S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. {beta}-In{sub 2}S{sub 3} was formed as low as 100{sup o}C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced. (author)

Yellow light emission from Ta2O5:Er, Eu, Ce thin films deposited using a simple co-sputtering method

Directory of Open Access Journals (Sweden)

K. Miura

2015-01-01

Full Text Available Erbium, europium, and cerium co-doped tantalum oxide (Ta2O5:Er, Eu, Ce thin films were prepared using a simple co-sputtering method, and yellow light emission was observed by the naked eye from a sample annealed at 900 °C for 20 min. The hexagonal Ta2O5 phase is very important, but the hexagonal CeTa7O19 phase should be avoided to obtain strong yellow light emission from Ta2O5:Er, Eu, Ce films. The co-sputtered films can be used as high-refractive-index and yellow-light-emitting materials of autocloned photonic crystals that can be applied to novel light-emission devices, and they will also be used as anti-reflection and down-conversion layers toward high-efficiency silicon solar cells.

THIN FILM-BASED SENSOR FOR MOTOR VEHICLE EXHAUST GAS, NH3, AND CO DETECTION

Directory of Open Access Journals (Sweden)

S. Sujarwata

2016-10-01

Full Text Available A copper phthalocyanine (CuPc thin film based gas sensor with FET structure and channel length 100 μm has been prepared by VE method and lithography technique to detect NH3, motor cycle exhaust gases and CO. CuPc material layer was deposited on SiO2 by the vacuum evaporator (VE method at room temperature and pressure of 8 x10-4 Pa. The stages of manufacturing gas sensor were Si/SiO2 substrate blenching with ethanol in an ultrasonic cleaner, source, and drain electrodes deposition on the substrate by using a vacuum evaporator, thin film deposition between the source/drain and gate deposition. The sensor response times to NH3, motorcycle exhaust gases and CO were 75 s, 135 s, and 150, respectively. The recovery times were 90 s, 150 s and 225, respectively. It is concluded that the CuPc thin film-based gas sensor with FET structure is the best sensor to detect the NH3 gas.Sensor gas berbasis film tipis copper phthalocyanine (CuPc berstruktur FET dengan panjang channel 100 μm telah dibuatdengan metode VE dan teknik lithography untuk mendeteksi NH3 gas buang kendaraan bermotor dan CO. Lapisan bahan CuPc dideposisikan pada permukaan silikon dioksida (SiO2 dengan metode vacuum evaporator (VE pada temperatur ruang dengan tekanan 8 x10-4 Pa. Tahapan pembuatan sensor gas adalah pencucian substrat Si/SiO2 dengan etanol dalam ultrasonic cleaner, deposisi elektroda source dan drain di atas substrat dengan metode vacuum evaporator, deposisi film tipis diantara source/drain dan deposisi gate. Waktu tanggap sensor terhadap NH3, gas buang kendaraan bermotor dan CO berturut-turut adalah 75 s, 135 s,dan 150 s. Waktu pemulihan berturut-turut adalah 90 s, 150 s,dan 225 s. Disimpulkan bahwa sensor gas berstruktur FET berbasis film tipis CuPc merupakan sensor paling baik untuk mendeteksi adanya gas NH3.

Properties of fluorine and tin co-doped ZnO thin films deposited by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Zhang, Pengwei; Tian, Xinlong; Cheng, Guo; Xie, Yinghao; Zhang, Huangchu; Zeng, Xiangfu; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2013-01-01

Highlights: •F and Sn co-doped ZnO thin films were synthesized by sol–gel method. •The effects of different F doping concentrations were investigated. •The co-doped nanocrystals exhibit good crystal quality. •The origin of the photoluminescence emissions was discussed. •The films showed high transmittance and low resistivity. -- Abstract: Highly transparent and conducting fluorine (F) and tin (Sn) co-doped ZnO (FTZO) thin films were deposited on glass substrates by the sol–gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) with various F doping concentrations. SEM images showed that the hexagonal ZnO crystals were well-arranged on the glass substrates and the HRTEM images indicated that the individual nanocrystals are highly oriented and exhibited a perfect lattice structure. Owing to its high carrier concentration and mobility, as well as good crystal quality, a minimum resistivity of 1 × 10 −3 Ω cm was obtained from the FTZO thin film with 3% F doping, and the average optical transmittance in the entire visible wavelength region was higher than 90%. The X-ray photoelectron spectroscopy (XPS) study confirmed the substitution of Zn 2+ by Sn ions and Room temperature photoluminescence (PL) observed for pure and FTZO thin films suggested the films exhibit a good crystallinity with a very low defect concentration

CO2 gas sensitivity of sputtered zinc oxide thin films

Indian Academy of Sciences (India)

TECS

Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

Influence of temperature on thermoelectric properties of Fe{sub x}Co{sub 1−x}S{sub 2} thin films: A semiconductor to semimetal conversion

Energy Technology Data Exchange (ETDEWEB)

Clamagirand, J.M.; Ares, J.R., E-mail: joser.ares@uam.es; Flores, E.; Diaz-Chao, P.; Leardini, F.; Ferrer, I.J.; Sánchez, C.

2016-02-01

In this work, we investigate the thermoelectric properties of p and n-type thin films obtained by cobalt doping of FeS{sub 2}. Films were synthesized by direct sulfuration of Co–Fe thin bilayers at 300 °C. It is found that at room temperature (RT), the Seebeck coefficient is reduced from 80 μV/K to − 70 μV/K when Co concentration is increased and the electrical resistivity of the films is decreased two orders of magnitude. X-ray diffraction and Raman measurements point out that Co is replacing Fe into the pyrite lattice and, subsequently is promoting a semiconductor to semimetal conversion. The influence of temperature on transport properties of different Fe{sub x}Co{sub 1−x}S{sub 2} films has been investigated. Whereas the Seebeck coefficient is hardly modified, the film resistivity is drastically decreased when temperature increases what has been attributed to the thermal activation of electrical carriers. The influence of Co doping on the band scheme of FeS{sub 2} is shown. To this aim, donor and acceptor states are included into its forbidden gap. Whereas the band scheme of FeS{sub 2} exhibits an acceptor level with an E = 0.11 ± 0.03 eV above the top of the valence band due to iron vacancies, a wide donor level close to the bottom of the conduction band (E = 0.08 ± 0.05 eV) is created by the progressive replacement of iron by cobalt into the FeS{sub 2} lattice. - Highlights: • Thermoelectric properties of pyrite and Co-doped pyrite thin films were measured. • Whereas ρ decreases, S remains practically unaltered on increasing temperature (RT-300 °C). • On increasing Co-concentration, films exhibit a p semiconductor to n type semimetal conversion. • Donor states close to the botton of the conduction band are created by Co doping. • Energy of the donor level decreases and gets wider due to Co-concentration.

TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

International Nuclear Information System (INIS)

Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

2011-01-01

We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

Science.gov (United States)

Yan, Chang; Liu, Fang-Yang; Lai, Yan-Qing; Li, Jie; Liu, Ye-Xiang

2011-10-01

We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 2θ shifting to larger values. The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.

Structure and magnetization in CoPd thin films and nanocontacts

International Nuclear Information System (INIS)

Morgan, Caitlin; Schmalbuch, Klaus; García-Sánchez, Felipe; Schneider, Claus M.; Meyer, Carola

2013-01-01

We present results showing the structural and magnetic properties of MBE-grown extended films and nanostructured elements of various CoPd alloys. X-ray diffraction studies show that the thin films are polycrystalline, yet exhibit a strong preferential growth orientation along the (111) direction. Magnetic force microscopy and SQUID are used to gain an understanding of the magnetic behavior of the CoPd system with respect to competing anisotropy contributions, based on temperature-dependent SQUID data, collected between 4 and 300 K. The idea and potential implications of using CoPd as a contact material to achieve spin injection in carbon nanotube-based devices is discussed. - Highlights: ► In-plane magnetization of CoPd films increases with added Co content. ► Quasi single-domain nanostructures of Co 50 Pd 50 exhibit almost no OOP component. ► Nanostructures exhibit decrease in coercive field with initial temperature decrease. ► Magnetic behavior is influenced by the anti-FM oxide and magnetoelastic effect.

Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

Science.gov (United States)

Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2017-11-01

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

Structural and magnetic characterization of mixed valence Co(II, III)xZn1−xO epitaxial thin films

International Nuclear Information System (INIS)

Negi, D.S.; Loukya, B.; Dileep, K.; Sahu, R.; Shetty, S.; Kumar, N.; Ghatak, J.; Pachauri, N.; Gupta, A.; Datta, R.

2014-01-01

In this article, we report on the Co atom incorporation, secondary phase formation and composition-dependent magnetic and optical properties of mixed valence Co(II, III) x Zn 1−x O epitaxial thin films grown by pulsed laser deposition. The intended total Co concentration is varied between ∼6–60 at.% with relatively higher concentration of +3 over +2 charge state. Mixed valence Co(II, III) shows high solubility in ZnO (up to 38 at.%) and ferromagnetism is observed in samples with total Co incorporation of ∼29 and 38 at.%. Electron diffraction pattern and high resolution transmission electron microscopy images reveal single crystalline nature of the thin films with wurtzite structure. Co oxide interlayer, with both rock salt and spinel structure, are observed to be formed between the substrate and wurtzite film for total Co concentration at ∼17 at.% and above. Magnetization shows composition dependence with a saturation moment value of ∼93 emu cm −3 and a coercive field of ∼285 Oe observed for ∼38 at.% Co:ZnO films. Ferromagnetism was not observed for films with Co concentration 17 and 9 at.%. The Co oxide interlayer does not show any ferromagnetism. All the films are n-type with carrier concentration ∼10 19 cm −3 . The observed magnetism is probably resulting from direct antiferromagntic exchange interaction between Co 2+ and Co 3+ ions favored by heavy Co alloying giving rise to ferrimagnetism in the system. - Highlights: • Mixed valence Co doped ZnO ferromagnetic single crystal thin film. • Secondary phase formation in terms of CoO and Co3O4 and magnetism is observed only for high Co alloying. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations

Multi-jump magnetic switching in ion-beam sputtered amorphous Co20Fe60B20 thin films

International Nuclear Information System (INIS)

Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

2013-01-01

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co 20 Fe 60 B 20 (5–75 nm) thin films grown on Si/amorphous SiO 2 are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices

The origin of magnetism in transition metal-doped ZrO2 thin films: Experiment and theory

KAUST Repository

Hong, Nguyenhoa

2013-10-04

We have investigated the magnetic properties of Fe/Co/Ni-doped ZrO 2 laser ablated thin films in comparison with the known results of Mn-doped ZrO2, which is thought to be a promising material for spintronics applications. It is found that doping with a transition metal can induce room temperature ferromagnetism in \\'fake\\' diamond. Theoretical analysis based on density functional theory confirms the experimental measurements, by revealing that the magnetic moments of Mn- and Ni-doped ZrO2 thin films are much larger than that of Fe- or Co-doped ZrO2 thin films. Most importantly, our calculations confirm that Mn- and Ni-doped ZrO2 show a ferromagnetic ground state in comparison to Co- and Fe-doped ZrO 2, which favor an antiferromagnetic ground state. © 2013 IOP Publishing Ltd.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

Science.gov (United States)

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Formation of p-type ZnO thin film through co-implantation

Science.gov (United States)

Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

2017-01-01

We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

Fabrication of highly spin-polarized Co2FeAl0.5Si0.5 thin-films

Directory of Open Access Journals (Sweden)

M. Vahidi

2014-04-01

Full Text Available Ferromagnetic Heusler Co2FeAl0.5Si0.5 epitaxial thin-films have been fabricated in the L21 structure with saturation magnetizations over 1200 emu/cm3. Andreev reflection measurements show that the spin polarization is as high as 80% in samples sputtered on unheated MgO (100 substrates and annealed at high temperatures. However, the spin polarization is considerably smaller in samples deposited on heated substrates.

Reversal of lattice, electronic structure, and magnetism in epitaxial SrCoOx thin films

Science.gov (United States)

Jeen, H.; Choi, W. S.; Lee, J. H.; Cooper, V. R.; Lee, H. N.; Seo, S. S. A.; Rabe, K. M.

2014-03-01

SrCoOx (x = 2.5 - 3.0, SCO) is an ideal material to study the role of oxygen content for electronic structure and magnetism, since SCO has two distinct topotactic phases: the antiferromagnetic insulating brownmillerite SrCoO2.5 and the ferromagnetic metallic perovskite SrCoO3. In this presentation, we report direct observation of a reversible lattice and electronic structure evolution in SrCoOx epitaxial thin films as well as different magnetic and electronic ground states between the topotactic phases.[2] By magnetization measurements, optical absorption, and transport measurements drastically different electronic and magnetic ground states are found in the epitaxially grown SrCoO2.5 and SrCoO3 thin films by pulsed laser epitaxy. First-principles calculations confirm substantial, which originate from the modification in the Co valence states and crystallographic structures. By real-time spectroscopic ellipsometry, the two electronically and magnetically different phases can be reversibly changed by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

Microstructure and Electrical Properties of Fe,Cu Substituted (Co,Mn)3O4 Thin Films

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Molin, Sebastian; Hendriksen, Peter Vang

2017-01-01

In this work, thin films (~1000 nm) of a pure MnCo2O4 spinel together with its partially substituted derivatives (MnCo1.6Cu0.2Fe0.2O4, MnCo1.6Cu0.4O4, MnCo1.6Fe0.4O4) were prepared by spray pyrolysis and were evaluated for electrical conductivity. Doping by Cu increases the electrical conductivit...

Structural Characteristics and Magnetic Properties of Al2O3 Matrix-Based Co-Cermet Nanogranular Films

Directory of Open Access Journals (Sweden)

Giap Van Cuong

2015-01-01

Full Text Available Magnetic micro- and nanogranular materials prepared by different methods have been used widely in studies of magnetooptical response. However, among them there seems to be nothing about magnetic nanogranular thin films prepared by a rf cosputtering technique for both metals and insulators till now. This paper presented and discussed preparation, structural characteristics, and magnetic properties of alumina (Al2O3 matrix-based granular Co-cermet thin films deposited by means of the cosputtering technique for both Co and Al2O3. By varying the ferromagnetic (Co atomic fraction, x, from 0.04 to 0.63, several dominant features of deposition for these thin films were shown. Structural characteristics by X-ray diffraction confirmed a cermet-type structure for these films. Furthermore, magnetic behaviours presented a transition from paramagnetic- to superparamagnetic- and then to ferromagnetic-like properties, indicating agglomeration and growth following Co components of Co clusters or nanoparticles. These results show a typical granular Co-cermet feature for the Co-Al2O3 thin films prepared, in which Co magnetic nanogranules are dispersed in a ceramic matrix. Such nanomaterials can be applied suitably for our investigations in future on the magnetooptical responses of spinplasmonics.

The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

International Nuclear Information System (INIS)

Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.; Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Koetschau, I.; Schock, H.-W.

2009-01-01

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu 2 ZnSnS 4 based thin film solar cells. A kesterite based solar cell (size 0.5 cm 2 ) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu 2 SnS 3 and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu 3 Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu 6 Sn 5 and Sn phases were detected. The formation mechanism of Cu 2 SnS 3 involves the binary sulphides Cu 2-x S and SnS 2 in the absence of the binary precursor phase Cu 6 Sn 5 . The presence of Cu 6 Sn 5 leads to a preferred formation of Cu 2 SnS 3 via the reaction educts Cu 2-x S and SnS 2 in the presence of a SnS 2 (Cu 4 SnS 6 ) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase

A comparative study of Co thin film deposited on GaAs (1 0 0) and glass substrates

International Nuclear Information System (INIS)

Sharma, A.; Brajpuriya, R.; Tripathi, S.; Jain, D.; Dubey, R.; Shripathi, T.; Chaudhari, S.M.

2006-01-01

The structural, magnetic and transport properties of Co/GaAs (1 0 0) and Co/glass thin films have been investigated. The structural measurements reveal the crystalline nature of Co thin film grown on GaAs, while microcrystalline nature in case of glass substrate. The film grown on GaAs shows higher coercivity (49.0 G), lower saturation magnetization (3.65 x 10 -4 ) and resistivity (8 μΩ cm) values as compared to that on glass substrate (22 G, 4.77 x 10 -4 and 18 μΩ cm). The grazing incidence X-ray reflectivity and photoemission spectroscopy results show the interaction between Co and GaAs at the interface, while the Co layer grown on glass remains unaffected. These observed results are discussed and interpreted in terms of different growth morphologies and structures of as grown Co thin film on both substrates

Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)

2016-02-29

In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.

Thin-film Rechargeable Lithium Batteries for Implantable Devices

Science.gov (United States)

Bates, J. B.; Dudney, N. J.

1997-05-01

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

Oriented thin films of Na0.6CoO2 and Ca3Co4O9 deposited by spin-coating method on polycrystalline substrate

Czech Academy of Sciences Publication Activity Database

Buršík, Josef; Soroka, Miroslav; Knížek, Karel; Hirschner, Jan; Levinský, Petr; Hejtmánek, Jiří

2016-01-01

Roč. 603, MAR (2016), s. 400-403 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GA14-18392S; GA ČR(CZ) GA13-03708S Institutional support: RVO:61388980 ; RVO:68378271 Keywords : Cobaltates * Thermoelectrics * NaxCoO2 * Ca3Co4O9 * Thin film s * ZrO2 Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.879, year: 2016

Structure and magnetization in CoPd thin films and nanocontacts

Energy Technology Data Exchange (ETDEWEB)

Morgan, Caitlin, E-mail: c.morgan@fz-juelich.de [Peter Gruenberg Institut, Forschungszentrum Juelich (Germany); JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany); Schmalbuch, Klaus [JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany); Physikalisches Institut, RWTH Aachen University, Otto-Blumenthal-Strasse, 52074 Aachen (Germany); Garcia-Sanchez, Felipe [Peter Gruenberg Institut, Forschungszentrum Juelich (Germany); JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany); Schneider, Claus M. [Peter Gruenberg Institut, Forschungszentrum Juelich (Germany); JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany); Fakultaet f. Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universitaet Duisburg-Essen, D-47048 Duisburg (Germany); Meyer, Carola [Peter Gruenberg Institut, Forschungszentrum Juelich (Germany); JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany)

2013-01-15

We present results showing the structural and magnetic properties of MBE-grown extended films and nanostructured elements of various CoPd alloys. X-ray diffraction studies show that the thin films are polycrystalline, yet exhibit a strong preferential growth orientation along the (111) direction. Magnetic force microscopy and SQUID are used to gain an understanding of the magnetic behavior of the CoPd system with respect to competing anisotropy contributions, based on temperature-dependent SQUID data, collected between 4 and 300 K. The idea and potential implications of using CoPd as a contact material to achieve spin injection in carbon nanotube-based devices is discussed. - Highlights: Black-Right-Pointing-Pointer In-plane magnetization of CoPd films increases with added Co content. Black-Right-Pointing-Pointer Quasi single-domain nanostructures of Co{sub 50}Pd{sub 50} exhibit almost no OOP component. Black-Right-Pointing-Pointer Nanostructures exhibit decrease in coercive field with initial temperature decrease. Black-Right-Pointing-Pointer Magnetic behavior is influenced by the anti-FM oxide and magnetoelastic effect.

Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

International Nuclear Information System (INIS)

Luo, Shi; Jang, Dongchan; Greer, Julia R.; Lee, Jiun-Haw; Liu, Chee-Wee; Shieh, Jia-Min; Shen, Chang-Hong; Wu, Tsung-Ta

2014-01-01

This work examines Cu(In,Ga)Se 2 thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

Investigation of AgInS2 thin films grown by coevaporation

Science.gov (United States)

Arredondo, C. A.; Clavijo, J.; Gordillo, G.

2009-05-01

AgInS2 thin films were grown on soda-lime glass substrates by co-evaporation of the precursors in a two-step process. X-ray diffraction (XRD) measurements indicated that these compounds grow in different phases and with different crystalline structure depending upon the deposition conditions. However, through a parameter study, conditions were found to grow thin films containing only the AgInS2 phase with chalcopyrite type structure. In samples containing a mixture of several phases, the contribution in percentage terms of each phase to the whole compound was estimated with the help of the PowderCell simulation package. It was also found that the AgInS2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.95 eV, indicating that this compound has good properties to perform as absorbent layer in thin film tandem solar cells. The effect of the deposition conditions on the optical and morphological properties was also investigated through spectral transmitance and atomic force microscopy (AFM) measurements.

Influence of co-electrodeposited Gold particles on the electrocatalytic properties of CoHCF thin films

International Nuclear Information System (INIS)

Kumar, Alam Venugopal Narendra; Joseph, James

2014-01-01

The electrochemical modification of solid electrodes with metal hexacyanoferrate thin films for enhancing the interfacial properties has created interest for over the past three decades. The preparation of Prussian blue (PB) Au nano composites for the enhancement in the electrocatalytic properties of PB on glassy carbon electrode has been reported by us. The incorporation of Au nano particles in Cobalt hexacyanoferrate (CoHCF) films on Glassy carbon by co-electrodeposition is expected to benefit its interfacial electron transfer properties. The present work describes the effect on the interfacial properties by incorporated Au particles in CoHCF (CoHCF(Au)) modified electrodes. The CoHCF(Au) modified electrodes were characterized by UV-Vis spectrophotometry, Cyclic Voltammetry, AC Impedance, FE-SEM etc., Influence on the electrocatalytic properties of CoHCF(Au) films have been explored by performing two important reactions i) Hydrazine elecrtro-oxidation ii) Oxygen evolution reaction. Our results reveal that CoHCF(Au) modified GC electrode perform better in terms of charge transport in the redox film and also for the electrooxidation of hydrazine in comparision with simple CoHCF modified electrodes. By using the current-transient technique (chrono method i vs t curve) the hydrazine diffusion coefficient (D 0 ) were calculated. Diffusion coefficient of hydrazine was approximately three times higher on CoHCF(Au) electrode, 9.5 × 10 −5 cm 2 s −1 compared with simple CoHCF modified electrode, 3.3× 10 −5 cm 2 s −1 . Similarly, we also discuss results which reveal that CoHCF(Au) electrodes enhances electrocatalytic activity in splitting water to oxygen in 0.1 M NaOH solution compared to simple CoHCF and Au deposited on GC electrodes

Characteristics of hydrogen co-doped ZnO : Al thin films

International Nuclear Information System (INIS)

Lee, S H; Lee, T S; Lee, K S; Cheong, B; Kim, W M; Kim, Y D

2008-01-01

ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing 1 wt% Al 2 O 3 on Corning glass at a substrate temperature of 150 deg. C with Ar and H 2 /Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with low Al content on the electrical, the optical and the structural properties of the as-grown films as well as the vacuum- and air-annealed films were examined. Secondary ion mass spectroscopy analysis showed that the hydrogen concentration increased with increasing H 2 in sputter gas. For the as-deposited films, the free carrier number increased with increasing H 2 . The Hall mobility increased at low hydrogen content, reaching a maximum before decreasing with a further increase of H 2 content in sputter gas. Annealing at 300 deg. C resulted in the removal of hydrogen, causing a decrease in the carrier concentration. It was shown that hydrogen might exist as single isolated interstitial hydrogen bound with oxygen, thereby acting like an anionic dopant. Also, it was shown that the addition of hydrogen to ZnO films doped with low metallic dopant concentration could yield transparent conducting films with very low absorption loss as well as with proper electrical properties, which is suitable for thin film solar cell applications

Electrochemical Characterization of La0.58Sr0.4Co0.2Fe0.8O3-δ Thin Film Electrodes Prepared by Pulsed Laser Deposition

DEFF Research Database (Denmark)

Plonczak, Pawel; Søgaard, Martin; Bieberle-Hütter, Anja

2012-01-01

Electrochemical properties of La0.58Sr0.4Co0.2Fe0.8O3-δ (LSCF) thin films with well defined microstructures have been investigated. Symmetrical cells were characterized by impedance spectroscopy in the temperature range from 625 to 750°C and the oxygen partial pressure, range from 10-2 to 1 atm...... have only an area specific resistance of 0.38 Ω cm2. It is shown that the polarization resistance of thin films is approximately proportional to the inverse of the surface area of the porous cathodes in the temperature regime 625 to 750°C. The activation energy of the surface oxygen exchange process...... depends on the thin film microstructure as it decreased from 2.4 eV for dense films to 1.6 eV for porous films....

Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

Science.gov (United States)

Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

2014-04-22

Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

International Nuclear Information System (INIS)

Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit

2017-01-01

A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm"2 is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit [Sardar Vallabhbhai National Institute of Technology, Chemical Engineering Department, Surat, Gujarat (India)

2017-08-15

A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm{sup 2} is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

KAUST Repository

Yave, Wilfredo; Car, Anja; Wind, Jan; Peinemann, Klaus Viktor

2010-01-01

Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

Science.gov (United States)

Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

2018-04-24

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo

2017-05-22

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

Surface properties of Co-doped BaFe{sub 2}As{sub 2} thin films deposited on MgO with Fe buffer layer and CaF{sub 2} substrates

Energy Technology Data Exchange (ETDEWEB)

Sobota, R. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Plecenik, T., E-mail: tomas.plecenik@fmph.uniba.sk [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Gregor, M.; Truchly, M.; Satrapinskyy, L.; Vidis, M.; Secianska, K. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Kurth, F.; Holzapfel, B.; Iida, K. [Institute for Metallic Materials, IFW Dresden, PO Box 270116, D-01171 Dresden (Germany); Kus, P.; Plecenik, A. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia)

2014-09-01

Highlights: • Surfaces of Co-doped Ba-122 films on various substrates were studied. • Substrate influences topography and surface conductivity distribution of the films. • Surface conductivity of Co-doped Ba-122 is highly inhomogeneous. • Point contact spectroscopy results can be affected by the surface differences. - Abstract: Surface properties of Co-doped BaFe{sub 2}As{sub 2} (Ba-122) thin films prepared by pulsed laser deposition on MgO with Fe buffer layer and CaF{sub 2} substrates were inspected by atomic force microscopy, scanning spreading resistance microscopy, scanning tunneling microscopy, X-ray photoelectron spectroscopy, auger electron spectroscopy/microscopy and point contact spectroscopy (PCS). Selected PCS spectra were fitted by extended 1D BTK model. The measurements were done on as-received as well as ion beam etched surfaces. Our results show that the substrate is considerably influencing the surface properties of the films, particularly the topography and surface conductivity distribution, what can affect results obtained by surface-sensitive techniques like PCS.

Oriented thin films of Na {sub 0.6}CoO {sub 2} and Ca {sub 3}Co {sub 4}O {sub 9} deposited by spin-coating method on polycrystalline substrate

Energy Technology Data Exchange (ETDEWEB)

Buršík, J., E-mail: bursik@iic.cas.cz [Institute of Inorganic Chemistry ASCR, 250 68 Řež near Prague (Czech Republic); Soroka, M. [Institute of Inorganic Chemistry ASCR, 250 68 Řež near Prague (Czech Republic); Knížek, K.; Hirschner, J.; Levinský, P.; Hejtmánek, J. [Institute of Physics ASCR, Cukrovarnická 10, 162 00 Prague 6 (Czech Republic)

2016-03-31

Thin film of two thermoelectric materials, Na {sub x}CoO {sub 2} (x ~ 0.6) and Ca {sub 3}Co {sub 4}O {sub 9}, was deposited using the sol–gel spin-coating method on a polycrystalline yttria-stabilized zirconia (YSZ) substrate. Despite the polycrystalline character of the substrate, the c-axis preferred orientation was obtained, suggesting self-assembly growth mechanism. The deposition procedure used offers several benefits, namely simplicity, high deposition rate, low fabrication cost as well as low price of the substrate, and low thermal conductivity of the substrate suitable for characterization of thermoelectric properties and for applications. The thermoelectric properties of the thin films are comparable with bulk materials. The samples exhibit power factor 0.23 - 0.26 × 10{sup -3} W ⋅ m {sup -1} ⋅ K {sup -2} at 750 K. - Highlights: • Thin film of thermoelectric cobaltates was deposited using the spincoating method. • The c-axis preferred orientation was obtained on polycrystalline YSZ substrate. • Benefits of the chosen procedure are simplicity, low cost, and low thermal conductivity of the substrate.

Scaling of Hall coefficient in Co-Bi granular thin films

Directory of Open Access Journals (Sweden)

Speliotis Th.

2013-01-01

Full Text Available A series of Co-Bi thin films with Co concentrations c=0, 0.05, 0.2, 0.26, 0.3, 0.333, 0.375, 0.545, were grown by magnetron sputtering on Si(100/SiNX substrates. Resistivity measurements at zero field (ρxx as a function of temperature-T exhibit an exponential variation with T in the region of 240KCo concentration diverges as log|c-0.3|0.3 for c<0.333, indicating a scaling of RH nearby a percolation threshold pc=0.3. Only after proper scaling of the anomalous Hall coefficient RS the conventional RS∝(ρxxn dependence can be satisfied.

Effect of hydrogen doping on the properties of Al and F co-doped ZnO films for thin film silicon solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Yang, Tung-Hsin

2016-04-30

Aluminum and fluorine co-doped zinc oxide (AFZO) thin films were prepared in Ar + H{sub 2} atmospheres by rf magnetron sputtering at room temperature. The structural, electrical, and optical properties of the prepared films were investigated using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, X-ray photoelectron spectroscopy, and ultraviolet–visible spectrometry, and their dependence on deposition atmosphere (i.e. H{sub 2} / (H{sub 2} + Ar) ratio) was studied. The resulting films showed a (0 0 2) diffraction peak, indicating a typical wurtzite structure, and the optimal film crystallinity was obtained with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%. The electrical resistivity of AFZO films decreased to 9.16 × 10{sup −4} Ω-cm, which was lower than ZnO:Al and ZnO:F films due to double doping effect of Al and F. The resistivity further decreased to below 5 × 10{sup −4} Ω-cm for the AFZO film with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%–5%. All the films regardless of hydrogen content displayed high transmittances (> 92%) in the visible wavelength range. Applying the developed AFZO films as front transparent electrodes, amorphous Si thin film solar cells were fabricated and the open-circuit voltage, fill factor, and efficiency of the cell with the hydrogenated AFZO film were improved in contrast to those without the hydrogenated film. - Highlights: • H{sub 2} doping improves optoelectronic properties of Al, F co-doped ZnO (AFZO) films. • Resistivity of AFZO films decreases to 4.4 × 10{sup −4} Ω-cm with the 3% H{sub 2}/(Ar + H{sub 2}) ratio. • AFZO films show high average visible transmittances of above 92%. • Efficiency of a-Si thin film solar cells is improved by AFZO:H as front electrode.

Growth and characterization of textured YBaCo{sub 2}O{sub 5+δ} thin films grown on (001)-SrTiO{sub 3} via DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Galeano, V. [Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Cerámicos y Vítreos, A.A. 568, Medellín (Colombia); Arnache, O. [Grupo de Estado Sólido, Departamento de Física, Universidad de Antioquia, A.A. 1226, Medellín (Colombia); Supelano, I.; Vargas, C.A. Parra [Universidad Pedagógica y Tecnológica de Colombia, Departamento de Física, Avenida Central del Norte 39-115, Tunja (Colombia); Morán, O., E-mail: omoranc@unal.edu.co [Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Cerámicos y Vítreos, A.A. 568, Medellín (Colombia)

2016-06-30

Thin films of the layered cobaltite YBaCo{sub 2}O{sub 5+δ} were successfully grown on (001)-oriented SrTiO{sub 3} single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo{sub 2}O{sub 5+δ} thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo{sub 2}O{sub 5+δ}, the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo{sub 2}O{sub 5+δ} thin films are grown on SrTiO{sub 3} substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

Micromachined thin-film sensors for SOI-CMOS co-integration

CERN Document Server

Laconte, Jean; Raskin, Jean-Pierre

2006-01-01

Co-integration of MEMS and MOS in SOI technology is promising and well demonstrated hereThe impact of Micromachining on SOI devices is deeply analyzed for the first timeInclude extensive TMAH etching, residual stress, microheaters, gas-flow sensors reviewResidual stresses in thin films need to be more and more monitored in MEMS designsTMAH micromachining is an attractive alternative to KOH.

Electronic and magnetic properties of TTF and TCNQ covered Co thin films

Energy Technology Data Exchange (ETDEWEB)

Geijn, Elmer van, E-mail: e.vangeijn@utwente.nl; Wang, Kai; Jong, Michel P. de [NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2016-05-07

Interfacial effects like orbital hybridization and charge transfer strongly influence the transfer of spins from ferromagnetic metals to organic semiconductors and can lead to the formation of interfacial states with distinct magnetic properties. The changes in the electronic and magnetic properties of a thin Co film upon adsorption of a layer of either the molecular organic electron donor tetrathiafulvalene (TTF) or the acceptor tetracyanoquinodimethane (TCNQ) have been investigated by X-ray absorption spectroscopy and X-ray magnetic circular dichroism using synchrotron radiation. Clear differences between the spectra of the adsorbed molecules and the neutral molecules show the hybridization of the molecular orbitals with the Co interface. Deposition of both organic materials leads to a small increase of the ratio of the orbital magnetic moment to the spin magnetic moment of the Co atoms at the interface. The main effect of overlayer deposition is a modification of the magnetic hysteresis of the Co film: The TCNQ slightly reduces the coercivity of the Co, while the TTF increases the coercivity by a factor of ∼1.5. These complementary effects of either a molecular organic electron donor or acceptor on the interfacial properties of a metal ferromagnetic thin film are a promising result for the controlled modification of the magnetic structure of hybrid interfaces.

Co+ -ion implantation induced doping of nanocrystalline CdS thin films: structural, optical, and vibrational properties

International Nuclear Information System (INIS)

Chandramohan, S.; Sarangi, S.N.; Majumder, S.; Som, T.; Kanjilal, A.; Sathyamoorthy, R.

2009-01-01

Full text: Transition metal (Mn, Fe, Co and Ni) doped CdS nanostructures and nanocrystalline thin films have attracted much attention due to their anticipated applications in magneto-optical, non-volatile memory and future spintronics devices. Introduction of impurities in substitutional positions is highly desirable for such applications. Ion implantation is known to provide many advantages over conventional methods for efficient doping and possibility of its seamless integration with device processing steps. It is not governed by equilibrium thermodynamics and offers the advantages of high spatial selectivity and to overcome the solubility limits. In this communication, we report on modifications of structural morphological, optical, and vibrational properties of 90 keV Co + -ion implanted CdS thin films grown by thermal evaporation. Co + -ion implantation was performed in the fluence range of 0.1-3.6x10 16 ions cm -2 These fluences correspond to Co concentration in the range of 0.34-10.8 at % at the peak position of profile. Implantation was done at an elevated temperature of 573 K in order to avoid amorphization and to enhance the solubility of Co ions in the CdS lattice. Films were characterized by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), optical absorption, and micro-Raman spectroscopy. Implantation does not lead to any secondary phase formation either in the form of impurity or the metallic clusters. However, implantation improves the crystalline quality of the samples and leads to supersaturation of Co ions in the CdS lattice. Thus, nanocrystalline CdS thin films can be considered as a good radiation- resistant material, which can be employed for prolonged use in solar cells for space applications. The optical band gap is found to decrease systematically with increasing ion fluence from 2.39 to 2.28 eV. Implantation leads to agglomeration of grains and a systematic increase in the surface roughness. Both GAXRD and micro

Structural, linear and nonlinear optical properties of co-doped ZnO thin films

Science.gov (United States)

Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

2016-01-01

Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

Strength, stiffness, and microstructure of Cu(In,Ga)Se{sub 2} thin films deposited via sputtering and co-evaporation

Energy Technology Data Exchange (ETDEWEB)

Luo, Shi; Jang, Dongchan; Greer, Julia R., E-mail: jrgreer@caltech.edu [Division of Applied Science and Engineering, California Institute of Technology, 1200 E California Blvd., Pasadena, California 91125 (United States); Lee, Jiun-Haw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, No. 1, Sec 4 Roosevelt, Taipei 10617, Taiwan (China); Liu, Chee-Wee [Department of Electrical Engineering, National Taiwan University, No 1, Sec 4 Roosevelt, Taipei 10617, Taiwan (China); Shieh, Jia-Min; Shen, Chang-Hong; Wu, Tsung-Ta [National Nano Device Laboratories, Hsinchu Science Park, No. 26, Prosperity Road I, Hsinchu 30078, Taiwan (China)

2014-07-07

This work examines Cu(In,Ga)Se{sub 2} thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

Characterization of Cu(In,Ga)(S,Se)2 thin films prepared by sequential evaporation from ternary compounds

International Nuclear Information System (INIS)

Yamaguchi, T.; Hatori, M.; Niiyama, S.; Miyake, Y.

2006-01-01

Cu(In,Ga)(S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In+Ga):(S+Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ]+[CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S+Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga)(S,Se) 2 thin films had large and columnar grains. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Substrate bias effects on composition and coercivity of CoCrTa/Cr thin films on canasite and glass

Science.gov (United States)

Deng, Y.; Lambeth, D. N.; Sui, X.; Lee, L.-L.; Laughlin, D. E.

1993-05-01

CoCrTa/Cr thin films were prepared by rf diode sputtering onto canasite and glass substrates at various bias voltages from two targets of different compositions (Co82.8Cr14.6Ta2.6 and Co86Cr12Ta2). While Auger depth profile analysis indicates that there is some broadening at the CoCrTa-Cr interface, x-ray fluorescence spectroscopy reveals that changes in alloy composition due to the resputtering processes are even more prominent. For both targets, as the substrate bias increases the Co content in the films declines, and the magnetization decreases. The maximum film coercivity appears to correlate to the final film composition. By investigating the results from both targets, it is concluded that the coercivity reaches a maximum when the film composition is in the neighborhood of Co84Cr13Ta3. Thus, to optimize the coercivity different bias voltages are required for each target. Excessive substrate bias, however, leads to films with low magnetization and coercivity.

Nb and Ta Co-Doped TiO2 Transparent Conductive Thin Films by Magnetron Sputtering: Fabrication, Structure, and Characteristics

Science.gov (United States)

Liu, Yang; Peng, Qian; Qiao, Yadong; Yang, Guang

2018-06-01

Nb and Ta co-doped anatase titanium dioxide (NTTO) nanocrystalline thin films were deposited on quartz and Si (100) substrates by RF magnetron sputtering. The influence of RF power on the growth, structure, morphology, and properties of the samples are discussed in detail. X-ray diffraction measurements show that the films are polycrystalline with anatase tetragonal structure, which is further confirmed by Raman spectroscopy analysis. Meanwhile, Raman spectroscopy results indicate that the peak width of E g(1) mode, which is directly correlated to the carrier density, changes obviously with RF power. It is found that the substitution of Nb5+ and Ta5+ at Ti site is significantly improved with the increase of RF power from 150 W to 210 W. For the sample deposited at 210 W, the optical transmittance is above 82% in the visible range and the electrical resistivity is as low as 1.3 × 10-3 Ω cm with carrier density of 1.1 × 1021 cm-3 and Hall mobility of 4.5 cm2 V-1 s-1. The optical and electrical properties of NTTO thin films can be compared to those of Nb or Ta doped anatase TiO2. However, co-doping with Nb and Ta gives a possible platform to complement the limitations of each individual dopant.

Optical and magneto-optical characterization of TbFeCo and GdFeCo thin films for high-density recording

International Nuclear Information System (INIS)

Hendren, W R; Atkinson, R; Pollard, R J; Salter, I W; Wright, C D; Clegg, W W; Jenkins, D F L

2003-01-01

Thin, optically semi-infinite films of amorphous TbFeCo and GdFeCo, suitable for magneto-optical recording, have been deposited by DC magnetron sputtering onto glass. Ellipsometric techniques have been used to determine the complex refractive index and complex magneto-optical parameter of the films in the wavelength range 400-900 nm, thus characterizing the materials. A review of the literature is presented and shows that the results for the TbFeCo films compare favourably with published results obtained from measurements conducted in situ, with the films protected with ZnS barrier layers. It is found that GdFeCo and TbFeCo are optically very similar, but magneto-optically the materials are quite different

Optical and magneto-optical characterization of TbFeCo and GdFeCo thin films for high-density recording

Energy Technology Data Exchange (ETDEWEB)

Hendren, W R [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Atkinson, R [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Pollard, R J [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Salter, I W [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Wright, C D [School of Engineering and Computer Science, University of Exeter, Exeter EX4 4QF (United Kingdom); Clegg, W W [CRIST, University of Plymouth, Plymouth PL4 8AA (United Kingdom); Jenkins, D F L [CRIST, University of Plymouth, Plymouth PL4 8AA (United Kingdom)

2003-03-12

Thin, optically semi-infinite films of amorphous TbFeCo and GdFeCo, suitable for magneto-optical recording, have been deposited by DC magnetron sputtering onto glass. Ellipsometric techniques have been used to determine the complex refractive index and complex magneto-optical parameter of the films in the wavelength range 400-900 nm, thus characterizing the materials. A review of the literature is presented and shows that the results for the TbFeCo films compare favourably with published results obtained from measurements conducted in situ, with the films protected with ZnS barrier layers. It is found that GdFeCo and TbFeCo are optically very similar, but magneto-optically the materials are quite different.

Growth and structure of Co/Au magnetic thin films; Croissance et structure des couches minces magnetiques Co/Au

Energy Technology Data Exchange (ETDEWEB)

Marsot, N

1999-01-14

We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

2009-02-02

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

Topotactic synthesis of strontium cobalt oxyhydride thin film with perovskite structure

Science.gov (United States)

Katayama, Tsukasa; Chikamatsu, Akira; Kamisaka, Hideyuki; Yokoyama, Yuichi; Hirata, Yasuyuki; Wadati, Hiroki; Fukumura, Tomoteru; Hasegawa, Tetsuya

2015-10-01

The substitution of hydride anions (H-) into transition metal oxides has recently become possible through topotactic reactions or high-pressure synthesis methods. However, the fabrication of oxyhydrides is still difficult because of their inherently less-stable frameworks. In this study, we successfully fabricated perovskite SrCoOxHy thin films via the topotactic hydride doping of brownmillerite SrCoO2.5 epitaxial thin films with CaH2. The perovskite-type cation framework was maintained during the topotactic treatment owing to epitaxial stabilization. Structural and chemical analyses accompanied by X-ray absorption spectroscopy measurements revealed that the doped hydride ions form a two-dimensional network of Co-H--Co bonds, in contrast to other reported perovskite oxyhydrides, SrMO3-xHx (M = Cr, Ti, V). The SrCoOxHy thin film exhibited insulating behavior and had a direct band gap of 2.1 eV. Thus, topotactic hydride doping of transition-metal-oxide thin films on suitable substrates is a promising method for the synthesis of new transition metal oxyhydrides.

Topotactic synthesis of strontium cobalt oxyhydride thin film with perovskite structure

Directory of Open Access Journals (Sweden)

Tsukasa Katayama

2015-10-01

Full Text Available The substitution of hydride anions (H− into transition metal oxides has recently become possible through topotactic reactions or high-pressure synthesis methods. However, the fabrication of oxyhydrides is still difficult because of their inherently less-stable frameworks. In this study, we successfully fabricated perovskite SrCoOxHy thin films via the topotactic hydride doping of brownmillerite SrCoO2.5 epitaxial thin films with CaH2. The perovskite-type cation framework was maintained during the topotactic treatment owing to epitaxial stabilization. Structural and chemical analyses accompanied by X-ray absorption spectroscopy measurements revealed that the doped hydride ions form a two-dimensional network of Co-H−-Co bonds, in contrast to other reported perovskite oxyhydrides, SrMO3−xHx (M = Cr, Ti, V. The SrCoOxHy thin film exhibited insulating behavior and had a direct band gap of 2.1 eV. Thus, topotactic hydride doping of transition-metal-oxide thin films on suitable substrates is a promising method for the synthesis of new transition metal oxyhydrides.

Synchrotron radiation stimulated etching of SiO sub 2 thin films with a Co contact mask for the area-selective deposition of self-assembled monolayer

CERN Document Server

Wang, C

2003-01-01

The area-selective deposition of a self-assembled monolayer (SAM) was demonstrated on a pattern structure fabricated by synchrotron radiation (SR) stimulated etching of a SiO sub 2 thin film on the Si substrate. The etching was conducted by irradiating the SiO sub 2 thin film with SR through a Co contact mask and using a mixture of SF sub 6 + O sub 2 as the reaction gas. The SR etching stopped completely at the SiO sub 2 /Si interface. After the SR etching, the Si surface and the SiO sub 2 surface beneath the Co mask were evaluated by an atomic force microscope (AFM). A dodecene SAM was deposited on the Si surface, and trichlorosilane-derived SAMs (octadecyltrichlorosilane, and octenyltrichlorosilane) were deposited on the SiO sub 2 surface beneath the Co mask. The structure of the deposited SAMs showed a densely packed and well-ordered molecular architecture, which was characterized by infrared spectroscopy, ellipsometry, and water contact angle (WCA) measurements. (author)

Magnetic anisotropies in SmCo thin films

International Nuclear Information System (INIS)

Chen, K.

1993-01-01

A systemic study of the deposition processes and magnetic properties for the Sm-Co film system has been carried out. Films of Sm-Co system with various magnetic anisotropies have been synthesized through sputter deposition in both crystalline and amorphous phases. The origins of various anisotropies have been studied. Thermalized sputter deposition process control was used to synthesize Fe enriched Sm-Co films with rhombohedral Th 2 Zn 17 type structure. The film exhibited unusually strong textures with the crystallographic c axes of the crystallites aligned in the film plane. A large anisotropy was resulted with easy axis in the film plane. A well defined and large in-the-film-plane anisotropy of exceptionally high value of 3.3 x 10 6 erg/cm 3 has been obtained in the amorphous SmCo films by applying a magnetic field in the film plane during deposition. It was found that the in-the-film-plane anisotropy depended essentially on the applied field and Sm concentration. For films not synthesized through thermallized sputtering, the easy axis of the film could reoriented. A perpendicular anisotropy was also presented in the film synthesized through thermallized sputtering deposition. A large in-plane anisotropy was obtained in films deposited above ambient temperatures. It was concluded that the surface induced short range ordering was the origin of the in-the-film-phase anisotropy observed in amorphous film deposited in the presence of a magnetic field. The formation mechanism was different from that of the short range ordering induced by field annealing. The perpendicular anisotropy was shown to be growth induced. Large in-plane anisotropy in amorphous films was resulted form partial crystallization in the film. Both the formation of growth induced structure and partial crystallization in the film prevented the formation of the pair ordering and decreased in-the-film-plane anisotropy

DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

International Nuclear Information System (INIS)

Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

2007-01-01

An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process

International Nuclear Information System (INIS)

Zhang, B.; Dong, X.P.; Wu, J.S.; Xu, X.F.

2008-01-01

Tantalum-doped indium tin oxide thin films were deposited by a cosputtering technique with an ITO target and a Ta 2 O 5 target. The variations of microstructure, electrical and optical properties with substrate temperature and annealing temperature were investigated in some detail. Ta-doped ITO thin films showed better crystalline structure with different prominent plane orientation by different heating process. ITO:Ta thin films deposited at room temperature showed better optical and electrical properties. Increasing substrate temperature and reasonable annealing temperature could remarkably improve the optical and electrical properties of the films. The variation of carrier concentration had an important influence on near-IR reflection, near-UV absorption and optical bandgap. ITO:Ta thin films showed wider optical bandgap. ITO:Ta thin films under the optimum parameters had a sheet resistance of 10-20 and ohm;/sq and a transmittance of 85% with an optical bandgap of above 4.0 eV. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Defects induced magnetic transition in Co doped ZnS thin films: Effects of swift heavy ion irradiations

Energy Technology Data Exchange (ETDEWEB)

Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Patel, M.K; Won, Jonghan [Materials Science and Technology Division, MST-8, P.O.Box 1663, Mail Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra [Physics Department, University of Allahabad, Allahabad 211002 (India)

2012-07-15

The effect of swift heavy ions (SHI) on magnetic ordering in ZnS thin films with Co ions substituted on Zn sites is investigated. The materials have been synthesized by pulsed laser deposition on substrates held at 600 Degree-Sign C for obtaining films with wurtzite crystal structure and it showed ferromagnetic ordering up to room temperature with a paramagnetic component. 120 MeV Ag ions have been used at different fluences of 1 Multiplication-Sign 10{sup 11} ions/cm{sup 2} and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2} for SHI induced modifications. The long range correlation between paramagnetic spins on Co ions was destroyed by irradiation and the material became purely paramagnetic. The effect is ascribed to the formation of cylindrical ion tracks due to the thermal spikes resulting from electron-phonon coupling. - Highlights: Black-Right-Pointing-Pointer Effect of swift heavy ions on magnetic ordering in Co doped ZnS thin films are presented. Black-Right-Pointing-Pointer Magnetization in the pristine films is composed of ferromagnetic and paramagnetic components. Black-Right-Pointing-Pointer The films become purely paramagnetic after swift heavy ions irradiation. Black-Right-Pointing-Pointer The magnetic transition is ascribed to the formation of ion track (or cylindrical defects) due to the thermal spikes.

Atom beam sputtered Ag-TiO{sub 2} plasmonic nanocomposite thin films for photocatalytic applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Jaspal; Sahu, Kavita [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India); Pandey, A. [Solid State Physics Laboratory, Defence Research and Development Organization, Timarpur, Delhi 110054 (India); Kumar, Mohit [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Ghosh, Tapas; Satpati, B. [Saha Institute of Nuclear Physics, HBNI, 1/AF, Bidhannagar, Kolkata 700064 (India); Som, T.; Varma, S. [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Avasthi, D.K. [Amity Institute of Nanotechnology, Noida 201313, Uttar Pradesh (India); Mohapatra, Satyabrata, E-mail: smiuac@gmail.com [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India)

2017-07-31

The development of nanocomposite coatings with highly enhanced photocatalytic activity is important for photocatalytic purification of water and air. We report on the synthesis of Ag-TiO{sub 2} nanocomposite thin films with highly enhanced photocatalytic activity by atom beam co-sputtering technique. The effects of Ag concentration on the structural, morphological, optical, plasmonic and photocatalytic properties of the nanocomposite thin films were investigated. UV–visible DRS studies revealed the presence of surface plasmon resonance (SPR) peak characteristic of Ag nanoparticles together with the excitonic absorption peak originating from TiO{sub 2} nanoparticles in the nanocomposites. XRD studies showed that the nanocomposite thin films consist of Ag nanoparticles and rutile TiO{sub 2} nanoparticles. The synthesized Ag-TiO{sub 2} nanocomposite thin films with 5 at% Ag were found to exhibit highly enhanced photocatalytic activity for sun light driven photocatalytic degradation of methylene blue in water, indicating their potential application in water purification.

Room temperature ferromagnetism in Zn{sub 1-x}Co{sub x}S thin films with wurtzite structure

Energy Technology Data Exchange (ETDEWEB)

Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Chawla, A.K.; Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra, E-mail: lkumarau@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India)

2011-11-15

The magnetic properties of Zn{sub 1-x}Co{sub x}S (x=0.025 and 0.05) thin films grown on {alpha}-quartz substrates at different temperatures (T{sub S}) of 200, 400 and 600 deg. C by means of pulsed laser deposition are presented. The films are crystallized with wurtzite structure. Optical absorption and transmission electron microscopy measurements indicate that Co ions are substituted to Zn on tetrahedral sites. Their magnetic response is composed of ferromagnetic and paramagnetic components of which respective strengths depend on T{sub S} and Co concentration. This behavior is interpreted as due to fluctuations in the magnetic ordering, depending on grain size and site location in grain boundaries or in crystal cores. - Highlights: > Co doped ZnS thin films have been fabricated at different substrate temperatures. > Magnetization in the films changes with changing substrate temperature. > Substitution of Co on Zn sites gives room temperature intrinsic ferromagnetism. > Magnetization in the films is composed of ferromagnetic and paramagnetic components.

Surface composition of magnetron sputtered Pt-Co thin film catalyst for proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Khalakhan, Ivan; Václavů, Michal [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Kovács, Gábor; Kozlov, Sergey M. [Departament de Química Física and Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, c/ Martí i Franquès 1, 08028 Barcelona (Spain); Kúš, Peter; Skála, Tomáš; Tsud, Natalia; Lavková, Jaroslava [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Potin, Valerie [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université Bourgogne, 9 Av. A. Savary, BP 47870, F-21078 Dijon Cedex (France); and others

2016-03-01

Graphical abstract: - Highlights: • Nanostructured Pt-Co thin catalyst films were grown on carbon by magnetron sputtering. • The surface composition of the nanostructured Pt-Co films was investigated by surface analysis techniques. • We carried out modeling of Pt-Co nanoalloys by computational methods. • Both experiment and modeling based on density functional theory showed that the surface of Pt-Co nanoparticles is almost exclusively composed of Pt atoms. - Abstract: Recently we have tested a magnetron sputtered Pt-Co catalyst in a hydrogen-fed proton exchange membrane fuel cell and showed its high catalytic activity for the oxygen reduction reaction. Here we present further investigation of the magnetron sputtered Pt-Co thin film catalyst by both experimental and theoretical methods. Scanning electron microscopy and transmission electron microscopy experiments confirmed the nanostructured character of the catalyst. The surface composition of as-deposited and annealed at 773 K Pt-Co films was investigated by surface analysis techniques, such as synchrotron radiation photoelectron spectroscopy and X-ray photoelectron spectroscopy. Modeling based on density functional theory showed that the surface of 6 nm large 1:1 Pt-Co nanoparticles is almost exclusively composed of Pt atoms (>90%) at typical operation conditions and the Co content does not exceed 20% at 773 K, in agreement with the experimental characterization of such films annealed in vacuum. According to experiment, the density of valence states of surface atoms in Pt-Co nanostructures is shifted by 0.3 eV to higher energies, which can be associated with their higher activity in the oxygen reduction reaction. The changes in electronic structure caused by alloying are also reflected in the measured Pt 4f, Co 3p and Co 2p photoelectron peak binding energies.

Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

CO2-Philic Thin Film Composite Membranes: Synthesis and Characterization of PAN-r-PEGMA Copolymer

Directory of Open Access Journals (Sweden)

Madhavan Karunakaran

2017-07-01

Full Text Available In this work, we report the successful fabrication of CO2-philic polymer composite membranes using a polyacrylonitrile-r-poly(ethylene glycol methyl ether methacrylate (PAN-r-PEGMA copolymer. The series of PAN-r-PEGMA copolymers with various amounts of PEG content was synthesized by free radical polymerization in presence of AIBN initiator and the obtained copolymers were used for the fabrication of composite membranes. The synthesized copolymers show high molecular weights in the range of 44–56 kDa. We were able to fabricate thin film composite (TFC membranes by dip coating procedure using PAN-r-PEGMA copolymers and the porous PAN support membrane. Scanning electron microscopy (SEM and atomic force microscopy (AFM were applied to analyze the surface morphology of the composite membranes. The microscopy analysis reveals the formation of the defect free skin selective layer of PAN-r-PEGMA copolymer over the porous PAN support membrane. Selective layer thickness of the composite membranes was in the range of 1.32–1.42 μm. The resulting composite membrane has CO2 a permeance of 1.37 × 10−1 m3/m2·h·bar and an ideal CO2/N2, selectivity of 65. The TFC membranes showed increasing ideal gas pair selectivities in the order CO2/N2 > CO2/CH4 > CO2/H2. In addition, the fabricated composite membranes were tested for long-term single gas permeation measurement and these membranes have remarkable stability, proving that they are good candidates for CO2 separation.

CO2-Philic Thin Film Composite Membranes: Synthesis and Characterization of PAN-r-PEGMA Copolymer

KAUST Repository

Karunakaran, Madhavan

2017-07-06

In this work, we report the successful fabrication of CO2-philic polymer composite membranes using a polyacrylonitrile-r-poly(ethylene glycol) methyl ether methacrylate (PAN-r-PEGMA) copolymer. The series of PAN-r-PEGMA copolymers with various amounts of PEG content was synthesized by free radical polymerization in presence of AIBN initiator and the obtained copolymers were used for the fabrication of composite membranes. The synthesized copolymers show high molecular weights in the range of 44-56 kDa. We were able to fabricate thin film composite (TFC) membranes by dip coating procedure using PAN-r-PEGMA copolymers and the porous PAN support membrane. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were applied to analyze the surface morphology of the composite membranes. The microscopy analysis reveals the formation of the defect free skin selective layer of PAN-r-PEGMA copolymer over the porous PAN support membrane. Selective layer thickness of the composite membranes was in the range of 1.32-1.42 mu m. The resulting composite membrane has CO2 a permeance of 1.37 x 10(-1) m(3)/m(2).h.bar and an ideal CO2/N-2, selectivity of 65. The TFC membranes showed increasing ideal gas pair selectivities in the order CO2/N-2 > CO2/CH4 > CO2/H-2. In addition, the fabricated composite membranes were tested for long-term single gas permeation measurement and these membranes have remarkable stability, proving that they are good candidates for CO2 separation.

Electrochemical Reduction of CO2 on Compositionally Variant Au-Pt Bimetallic Thin Films

DEFF Research Database (Denmark)

Ma, Ming; Hansen, Heine Anton; Valenti, Marco

2017-01-01

The electrocatalytic reduction of CO2 on Au-Pt bimetallic catalysts with different compositions was evaluated, offering a platform for uncovering the correlation between the catalytic activity and the surface composition of bimetallic electrocatalysts. The Au-Pt alloy films were synthesized...... by a magnetron sputtering co-deposition technique with tunable composition. It was found that the syngas ratio (CO:H2) on the Au-Pt films is able to be tuned by systematically controlling the binary composition. This tunable catalytic selectivity is attributed to the variation of binding strength of COOH and CO...... intermediates, influenced by the surface electronic structure (d-band center energy) which is linked to the surface composition of the bimetallic films. Notably, a gradual shift of the d-band center away from the Fermi level was observed with increasing Au content, which correspondingly reduces the binding...

Al-Sn doped ZnO thin film nanosensor for monitoring NO2 concentration

Directory of Open Access Journals (Sweden)

G.S. Hikku

2017-07-01

Full Text Available The metal oxide semiconductor gas sensor technology is robust and has quick response times. In this work, aluminium and tin co-doped zinc oxide (ASZO thin films were synthesized by a sol–gel dip-coating process as sensors for the greenhouse gas nitrogen dioxide (NO2. The prepared ASZO thin films were characterized using such techniques as X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and photoluminescence (PL emission studies in order to analyze the elemental confirmation, particle size, surface roughness and optical emission properties, respectively. The XRD data reveals the hexagonal structure of ASZO and that the preferential orientation is along 2θ = 36.19°. SEM images of the ASZO thin film exhibit rod-like formations of ASZO on the substrate. The ASZO films show enhanced sensing behaviour, sensing NO2 gas even at 2 ppm at an operating temperature of 170 °C. The response and recovery times were determined to be 30 and 20 s, respectively.

Structural, electrical and magnetic characterization of in-situ crystallized ZnO:Co thin films synthesized by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lardjane, Soumia, E-mail: lardjanesoumia@yahoo.fr [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Division Etude et Prédiction des Matériaux, Unité de Recherche Matériaux et Energies Renouvelables, Université Abou Bekr Belkaid, Tlemcen (Algeria); Pour Yazdi, Mohammad Arab [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Martin, Nicolas [FEMTO-ST, Département MN2S, UMR 6174 CNRS, Université de Franche-Comté, ENSMM, UTBM, 32, Avenue de l’Observatoire, 25044 Besancon Cedex (France); Bellouard, Christine [Laboratoire de Physique des Matériaux, Nancy University, CNRS, 54506 Vandoeuvre-lès-Nancy Cedex (France); Fenineche, Nour-eddine [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Schuler, Andreas [Solar Energy and Buildings Physics Laboratory, EPFL ENAC IIC LESO-PB, Station 18, Bâtiment LE, 1015 Lausanne (Switzerland); Merad, Ghouti [Division Etude et Prédiction des Matériaux, Unité de Recherche Matériaux et Energies Renouvelables, Université Abou Bekr Belkaid, Tlemcen (Algeria); Billard, Alain [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France)

2015-07-01

Zn{sub 1−x}Co{sub x}O (0 < x < 0.146) conductive thin films have been deposited by reactive magnetron sputtering of metallic Zn and Co targets at high pressure and temperature. The structural properties have been investigated by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It has been observed that all as-deposited films are crystallized in pure hcp ZnO structure and neither traces of metallic nor oxide Co-rich clusters were detected. The average grain size estimated from full width at half maximum of XRD results varied between 65 and 83 nm. XPS analyses exhibit that Co ions are successfully entered into ZnO lattice as Co{sup +2}. The electrical properties including conductivity, carrier density and carrier mobility were determined by Hall effect measurements in a temperature range from 300 K to 475 K. The conductivity of the films decreases from σ{sub 300K} = 2.2 × 10{sup 4} to 2.3 × 10{sup −1} Sm{sup −1} as the Co content changes from 0 to 0.146. Magnetic measurements reveal the absence of ferromagnetism even at 3 K and a paramagnetic Curie–Weiss behavior associated to magnetic clusters. - Highlights: • Zn{sub 1−x}Co{sub x}O conductive thin films were synthesized by reactive magnetron sputtering. • Structural characterization exhibited the absence of Co clusters or secondary phases. • The film conductivity decreased with increasing of Co concentration. • No ferromagnetism was observed in all Co doped ZnO samples. • Magnetic properties are described by a Curie–Weiss behavior associated to clusters.

Epitaxial growth and characterization of CoO/Fe(001) thin film layered structures

International Nuclear Information System (INIS)

Brambilla, A.; Sessi, P.; Cantoni, M.; Duo, L.; Finazzi, M.; Ciccacci, F.

2008-01-01

By means of X-ray photoemission spectroscopy and low energy electron diffraction, we show that it is possible to grow good quality thin epitaxial CoO films on Fe(001) substrates, through deposition in oxygen atmosphere. In particular, the composition and the structure of CoO(001)/Fe(001) bilayer systems and Fe(001)/CoO(001)/Fe(001) trilayer systems have been investigated by monitoring the evolution of the chemical interactions at the interfaces as a function of CoO thickness and growth temperature. We observe the presence of Fe oxides at the CoO/Fe interface and of a thin layer of metallic cobalt at the upper Fe/CoO interface of trilayer systems

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

Atomically layer-by-layer diffusion of oxygen/hydrogen in highly epitaxial PrBaCo{sub 2}O{sub 5.5+δ} thin films

Energy Technology Data Exchange (ETDEWEB)

Bao, Shanyong; Xu, Xing; Enriquez, Erik; Mace, Brennan E.; Chen, Garry; Kelliher, Sean P.; Chen, Chonglin, E-mail: cl.chen@utsa.edu [Department of Physics and Astronomy, University of Texas, San Antonio, Texas 78249 (United States); Zhang, Yamei [Department of Physics, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu 212003 (China); Whangbo, Myung-Hwan [North Carolina State University, Raleigh, North Carolina 27695-8204 (United States); Dong, Chuang; Zhang, Qinyu [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China)

2015-12-14

Single-crystalline epitaxial thin films of PrBaCo{sub 2}O{sub 5.5+δ} (PrBCO) were prepared, and their resistance R(t) under a switching flow of oxidizing and reducing gases were measured as a function of the gas flow time t in the temperature range of 200–800 °C. During the oxidation cycle under O{sub 2}, the PrBCO films exhibit fast oscillations in their dR(t)/dt vs. t plots, which reflect the oxidation processes, Co{sup 2+}/Co{sup 3+} → Co{sup 3+} and Co{sup 3+} → Co{sup 3+}/Co{sup 4+}, that the Co atoms of PrBCO undergo. Each oscillation consists of two peaks, with larger and smaller peaks representing the oxygen/hydrogen diffusion through the (BaO)(CoO{sub 2})(PrO)(CoO{sub 2}) layers of PrBCO via the oxygen-vacancy-exchange mechanism. This finding paves a significant avenue for cathode materials operating in low-temperature solid-oxide-fuel-cell devices and for chemical sensors with wide range of operating temperature.

TiO2 and Cu/TiO2 Thin Films Prepared by SPT

Directory of Open Access Journals (Sweden)

S. S. Roy

2015-12-01

Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

Investigation of AgInS{sub 2} thin films grown by coevaporation

Energy Technology Data Exchange (ETDEWEB)

Arredondo, C A; Gordillo, G [Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia); J, Clavijo, E-mail: caarredondoo@unal.edu.c, E-mail: ggordillog@unal.edu.c [Departamento de Quimica, Universidad Nacional de Colombia, Bogota, Cr.30 N0 45-03 (Colombia)

2009-05-01

AgInS{sub 2} thin films were grown on soda-lime glass substrates by co-evaporation of the precursors in a two-step process. X-ray diffraction (XRD) measurements indicated that these compounds grow in different phases and with different crystalline structure depending upon the deposition conditions. However, through a parameter study, conditions were found to grow thin films containing only the AgInS{sub 2} phase with chalcopyrite type structure. In samples containing a mixture of several phases, the contribution in percentage terms of each phase to the whole compound was estimated with the help of the PowderCell simulation package. It was also found that the AgInS{sub 2} films present p-type conductivity, a high absorption coefficient (greater than 10{sub 4} cm{sub -1}) and an energy band gap Eg of about 1.95 eV, indicating that this compound has good properties to perform as absorbent layer in thin film tandem solar cells. The effect of the deposition conditions on the optical and morphological properties was also investigated through spectral transmitance and atomic force microscopy (AFM) measurements.

Research progress of VO2 thin film as laser protecting material

Science.gov (United States)

Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

2018-03-01

With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

Optical and structural study of In{sub 2}S{sub 3} thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu{sub 3}BiS{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Mesa, F., E-mail: fgmesar@unal.edu.co [Unidad de Estudios Universitarios, Colegio Mayor de Nuestra Señora del Rosario, Cra. 24 N° 63C-69, Bogotá (Colombia); Chamorro, W. [Université de Lorraine, Institut Jean Lamour, Nancy (France); Hurtado, M. [Departamento de Quimica, Universidad Nacional de Colombia, Cra. 30 N° 45-03, Bogotá (Colombia); Departamento de Física, Universidad de los Andes, Calle 21 No. 1-20, Bogotá (Colombia)

2015-09-30

Highlights: • In{sub 2}S{sub 3} thin films usually grow like an ultrathin. • Samples grown by CBD have a higher degree of coverage of the substrate unlike co-evaporation method. • Solar cells of Al/TCO/In{sub 2}S{sub 3}/Cu{sub 3}BiS{sub 3}/Mo structure. • In{sub 2}S{sub 3} thin films were deposited on Cu{sub 3}BiS{sub 3} (CBS), with of In{sub 2}S{sub 3} β-phase with tetragonal structure. - Abstract: We present the growth of In{sub 2}S{sub 3} onto Cu{sub 3}BiS{sub 3} layers and soda-lime glass (SLG) substrates by using chemical bath deposition (CBD) and physical co-evaporation. The results reveal that the microstructure and the optical properties of the In{sub 2}S{sub 3} films are highly dependent on the growth method. X-ray diffractrograms show that In{sub 2}S{sub 3} films have a higher crystallinity when growing by co-evaporation than by CBD. In{sub 2}S{sub 3} thin films grown by CBD with a thickness below 170 nm have an amorphous structure however when increasing the thickness the films exhibit two diffraction peaks associated to the (1 0 3) and (1 0 7) planes of the β-In{sub 2}S{sub 3} tetragonal structure. It was also found that the In{sub 2}S{sub 3} films present an energy bandgap (E{sub g}) of about 2.75 eV, regardless of the thickness of the samples.

Topotactic synthesis of strontium cobalt oxyhydride thin film with perovskite structure

Energy Technology Data Exchange (ETDEWEB)

Katayama, Tsukasa [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Kamisaka, Hideyuki [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Yokoyama, Yuichi; Hirata, Yasuyuki; Wadati, Hiroki [Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581 (Japan); Fukumura, Tomoteru [CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Department of Chemistry, Tohoku University, Miyagi 980-8578 (Japan); Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

2015-10-15

The substitution of hydride anions (H{sup −}) into transition metal oxides has recently become possible through topotactic reactions or high-pressure synthesis methods. However, the fabrication of oxyhydrides is still difficult because of their inherently less-stable frameworks. In this study, we successfully fabricated perovskite SrCoO{sub x}H{sub y} thin films via the topotactic hydride doping of brownmillerite SrCoO{sub 2.5} epitaxial thin films with CaH{sub 2}. The perovskite-type cation framework was maintained during the topotactic treatment owing to epitaxial stabilization. Structural and chemical analyses accompanied by X-ray absorption spectroscopy measurements revealed that the doped hydride ions form a two-dimensional network of Co-H{sup −}-Co bonds, in contrast to other reported perovskite oxyhydrides, SrMO{sub 3−x}H{sub x} (M = Cr, Ti, V). The SrCoO{sub x}H{sub y} thin film exhibited insulating behavior and had a direct band gap of 2.1 eV. Thus, topotactic hydride doping of transition-metal-oxide thin films on suitable substrates is a promising method for the synthesis of new transition metal oxyhydrides.

Multiferroic fluoride BaCoF4 Thin Films Grown Via Molecular Beam Epitaxy

Science.gov (United States)

Borisov, Pavel; Johnson, Trent; García-Castro, Camilo; Kc, Amit; Schrecongost, Dustin; Cen, Cheng; Romero, Aldo; Lederman, David

Multiferroic materials exhibit exciting physics related to the simultaneous presence of multiple long-range orders, in many cases consisting of antiferromagnetic (AF) and ferroelectric (FE) orderings. In order to provide a new, promising route for fluoride-based multiferroic material engineering, we grew multiferroic fluoride BaCoF4 in thin film form on Al2O3 (0001) substrates by molecular beam epitaxy. The films grow with the orthorhombic b-axis out-of-plane and with three in-plane structural twin domains along the polar c-axis directions. The FE ordering in thin films was verified by FE remanent hysteresis loops measurements at T = 14 K and by room temperature piezoresponse force microscopy (PFM). An AF behavior was found below Neel temperature TN ~ 80 K, which is in agreement with the bulk properties. At lower temperatures two additional magnetic phase transitions at 19 K and 41 K were found. First-principles calculations demonstrated that the growth strain applied to the bulk BaCoF4 indeed favors two canted spin orders, along the b- and a-axes, respectively, in addition to the main AF spin order along the c-axis. Supported by FAME (Contract 2013-MA-2382), WV Research Challenge Grant (HEPC.dsr.12.29), and DMREF-NSF 1434897.

Highly textured fresnoite thin films synthesized in situ by pulsed laser deposition with CO2 laser direct heating

International Nuclear Information System (INIS)

Lorenz, Michael; Stölzel, Marko; Brachwitz, Kerstin; Hochmuth, Holger; Grundmann, Marius; De Pablos-Martin, Araceli; Patzig, Christian; Höche, Thomas

2014-01-01

Fresnoite Ba 2 TiSi 2 O 8 (BTS) thin films were grown and crystallized in situ using pulsed laser deposition (PLD) with CO 2 laser direct heating of the a-plane sapphire (1 1 0) substrates up to 1250 °C. Starting with 775 °C growth temperature, (0 0 1)- and (1 1 0)-textured BTS and BaTiO 3 phases, respectively, could be assigned in the films, and the typical fern-like BTS crystallization patterns appear. For higher process temperatures of 1100 to 1250 °C, atomically smooth, terraced surface of the films was found, accompanied by crystalline high-temperature phases of Ba–Ti–Si oxides. HAADF micrographs taken in both scanning transmission electron microscopy and energy-dispersive x-ray spectrometry mode show details of morphology and elemental distribution inside the films and at the interface. To balance the inherent Si deficiency of the BTS films, growth from glassy BTS × 2 SiO 2 and BTS × 2.5 SiO 2 targets was considered as well. The latter targets are ideal for PLD since the employed glasses possess 100% of the theoretical density and are homogeneous at the atomic scale. (paper)

Damping constant of Co/Pt multilayer thin-film media

International Nuclear Information System (INIS)

Fujita, N.; Inaba, N.; Kirino, F.; Igarashi, S.; Koike, K.; Kato, H.

2008-01-01

Gilbert's damping constants, α, of Co(t Co )/Pt (1.4 nm) multilayer thin films are investigated by Q-band FMR analysis. α is calculated from the resonance width of the FMR spectrum. With decreasing t Co , the α value decreases from 0.034 (t Co =8.7 nm) to 0.023 (t Co =1.8 nm), and then increases to 0.037 (t Co =1.0 nm). The decrease of α with t Co >1.8 nm is probably due to the eddy current loss effects. The increase of α with t Co <1.8 nm would be caused by the increase of the distortion between the Co and the Pt layers at the interface. When the magnetic field direction was changed from θ=90 deg. (parallel to the specimen) to θ=0 deg. (perpendicular to the specimen), the α of all the specimens increased, and a sharp step in α was observed around θ=40 deg., where the α has the maximum value

Semiconductor thin films directly from minerals—study of structural, optical, and transport characteristics of Cu2O thin films from malachite mineral and synthetic CuO

International Nuclear Information System (INIS)

Balasubramaniam, K.R.; Kao, V.M.; Ravichandran, J.; Rossen, P.B.; Siemons, W.; Ager, J.W.

2012-01-01

We demonstrate the proof-of-concept of using an abundantly occurring natural ore, malachite (Cu 2 CO 3 (OH) 2 ) to directly yield the semiconductor Cu 2 O to be used as an active component of a functional thin film based device. Cu 2 O is an archetype hole-conducting semiconductor that possesses several interesting characteristics particularly useful for solar cell applications, including low cost, non-toxicity, good hole mobility, large minority carrier diffusion length, and a direct energy gap ideal for efficient absorption. In this article, we compare the structural, optical, and electrical transport characteristics of Cu 2 O thin films grown from the natural mineral malachite and synthetic CuO targets. Growth from either source material results in single-phase, fully epitaxial cuprous oxide thin films as determined by x-ray diffraction. The films grown from malachite have strong absorption coefficients ( 10 4 cm −1 ), a direct allowed optical bandgap ( 2.4 eV), and majority carrier hole mobilities ( 35 cm 2 V −1 s −1 at room temperature) that compare well with films grown from the synthetic target as well as with previously reported values. Our work demonstrates that minerals could be useful to directly yield the active components in functional devices and suggests a route for the exploration of low cost energy conversion and storage technologies. - Highlights: ► Semiconductor thin films directly from minerals ► Chemistry and structure evolution of the films obtained from mineral target is very similar to that films obtained from high-purity synthetic targets. ► Quite interestingly, transport and optical characteristics are also found to be similar.

Characterization of diamond thin films deposited by a CO{sub 2} laser-assisted combustion-flame method

Energy Technology Data Exchange (ETDEWEB)

McKindra, Travis, E-mail: mckindra@mst.edu [Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); O' Keefe, Matthew J. [Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); Xie Zhiqiang; Lu Yongfeng [Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States)

2010-06-15

Diamond thin films were deposited by a CO{sub 2} laser-assisted O{sub 2}/C{sub 2}H{sub 2}/C{sub 2}H{sub 4} combustion-flame process. The effect of the deposition parameters, in particular the laser wavelength and power, on the film surface morphology, microstructure and phases present was the primary focus of the work. The laser power was set at 100, 400 and 800 W while the wavelength was varied and set at 10.591 {mu}m in the untuned condition and set at 10.532 {mu}m to resonantly match the CH{sub 2}-wagging vibrational mode of the C{sub 2}H{sub 4} molecule when in the tuned condition. When the laser was coupled to the combustion flame during deposition the diamond film growth was enhanced as the lateral grain size increased from 1 {mu}m to greater than 5 {mu}m. The greatest increase in grain size occurred when the wavelength was in the tuned condition. Scanning transmission electron microscopy images from focused-ion beam cross-sectioned samples revealed a sub-layer of smaller grains less than 1 {mu}m in size near the substrate surface at the lower laser powers and untuned wavelength. X-ray diffraction results showed a more intense Diamond (111) peak as the laser power increased from 100 to 800 W for the films deposited with the tuned laser wavelength. Micro-Raman spectra showed a diamond peak nearly twice as intense from the films with the tuned laser wavelength.

Room-temperature synthesis and characterization of porous CeO2 thin films

International Nuclear Information System (INIS)

Chu, Dewei; Masuda, Yoshitake; Ohji, Tatsuki; Kato, Kazumi

2012-01-01

CeO 2 thin films with hexagonal-shaped pores were successfully prepared by a facile electrodeposition at room temperature combined with an etching process. By using electrodeposited ZnO nanorods as a soft template, the morphology, and microstructure of the CeO 2 could be controlled. TEM observation indicated that as-prepared CeO 2 film is composed of nanocrystals with average size of several nanometers, while XPS analysis showed the coexistence of Ce 3+ and Ce 4+ in the film. The photoluminescence properties of CeO 2 films were measured, which showed much higher sensitivity compared to bare substrate. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki Yeon; Lee, Jeong Soo

2008-02-15

This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

Structure and optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Todorov, R; Pirov, J; Petkov, K [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl.109, 1113 Sofia (Bulgaria); Tsankov, D, E-mail: rossen@clf.bas.bg [Institute of Organic Chemistry with Centre of Phytochemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev St. bl.9, 1113 Sofia (Bulgaria)

2011-08-03

This paper deals with the optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films. The thin layers were deposited by thermal co-evaporation of As{sub 2}S{sub 3} and In{sub 2}S{sub 3}. The composition of the coatings was controlled by x-ray microanalysis; it was found to be close to the expected one. The refractive index n and optical band gap E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The results showed that the refractive index of thin As-S films is not affected by the addition of 1 at% indium and it increases from 2.46 to 2.58 for thin film with 13 at% In. A decrease in the changes in the refractive index, {Delta}n, after exposure to light or annealing with addition of indium in arsenic sulfide is observed. To explain the influence of the indium on the photoinduced changes in the optical properties of thin As-S-In films, the glass structure was investigated by infrared spectroscopy. The calculated values of the optical constants were compared with those obtained from ellipsometric measurements.

Preparation and characterization of highly L21-ordered full-Heusler alloy Co2FeAl0.5Si0.5 thin films for spintronics device applications

International Nuclear Information System (INIS)

Wang Wenhong; Sukegawa, Hiroaki; Shan Rong; Furubayashi, Takao; Inomata, Koichiro

2008-01-01

We report the investigation of structure and magnetic properties of full-Heusler alloy Co 2 FeAl 0.5 Si 0.5 (CFAS) thin films grown on MgO-buffered MgO (001) substrates through magnetron sputtering. It was found that single-crystal CFAS thin films with high degree of L2 1 ordering and sufficiently flat surface could be obtained after postdeposition annealing. All the films show a distinct uniaxial magnetic anisotropy with the easy axis of magnetization along the in-plane [110] direction. These results indicate that the use of the MgO buffer for CFAS is a promising approach for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications

Structure and electrical properties of (La, Zn) Co-doped BiFeO3 thin films prepared by using chemical solution deposition

Science.gov (United States)

Kim, Y. J.; Kim, H. J.; Kim, J. W.; Raghavan, C. M.; Kim, S. S.

2012-08-01

We prepared pure BiFeO3 (BFO) and (Bi0.9La0.1)(Fe0.975Zn0.025)O3- δ (BLFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BLFZO thin film. The leakage current density of the BLFZO thin film was four orders of magnitude lower than that of the pure BFO, 4.17 × 10-7 A/cm2 at 100 kV/cm. The remnant polarization (2 P r ) and the coercive electric field (2 E c ) of the BLFZO thin film were 97 µC/cm2 and 903 kV/cm at an applied electric field of 972 kV/cm and at a frequency of 1 kHz, and the values decreased with increasing measurement frequency to 63 µC/cm2 and 679 kV/cm at 10 kHz, respectively. Also, after 1.44 × 1010 cycles, a better fatigue endurance was observed in the BLFZO thin film, which was 90% of its initial value. We also confirmed that the remnant polarization (2 P r ) and the coercive electric field (2 E c ) were fairly saturated above a measurement frequency of 15 kHz for the BLFZO thin film.

Photocatalytic properties of porous TiO2/Ag thin films

International Nuclear Information System (INIS)

Chang, C.-C.; Chen, J.-Y.; Hsu, T.-L.; Lin, C.-K.; Chan, C.-C.

2008-01-01

In this study, nanocrystalline TiO 2 /Ag composite thin films were prepared by a sol-gel spin-coating technique. By introducing polystyrene (PS) spheres into the precursor solution, porous TiO 2 /Ag thin films were prepared after calcination at a temperature of 500 deg. C for 4 h. Three different sizes (50, 200, and 400 nm) of PS spheres were used to prepare porous TiO 2 films. The as-prepared TiO 2 and TiO 2 /Ag thin films were characterized by X-ray diffractometry (XRD) and by scanning electron microscopy to reveal structural and morphological differences. In addition, the photocatalytic properties of these films were investigated by degrading methylene blue under UV irradiation. When PS spheres of different sizes were introduced after calcination, the as-prepared TiO 2 films exhibited different porous structures. XRD results showed that all TiO 2 /Ag films exhibited a major anatase phase. The photodegradation of porous TiO 2 thin films prepared with 200 nm PS spheres and doped with 1 mol% Ag exhibited the best photocatalytic efficiency where ∼ 100% methylene blue was decomposed within 8 h under UV exposure

Magnetic domain observation of FeCo thin films fabricated by alternate monoatomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Ohtsuki, T., E-mail: ohtsuki@spring8.or.jp; Kotsugi, M.; Ohkochi, T. [Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Kojima, T.; Mizuguchi, M.; Takanashi, K. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2014-01-28

FeCo thin films are fabricated by alternate monoatomic layer deposition method on a Cu{sub 3}Au buffer layer, which in-plane lattice constant is very close to the predicted value to obtain a large magnetic anisotropy constant. The variation of the in-plane lattice constant during the deposition process is investigated by reflection high-energy electron diffraction. The magnetic domain images are also observed by a photoelectron emission microscope in order to microscopically understand the magnetic structure. As a result, element-specific magnetic domain images show that Fe and Co magnetic moments align parallel. A series of images obtained with various azimuth reveal that the FeCo thin films show fourfold in-plane magnetic anisotropy along 〈110〉 direction, and that the magnetic domain structure is composed only of 90∘ wall.

Structural, electrical and magnetic studies of Co:SnO{sub 2} and (Co,Mo):SnO{sub 2} films prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Dalui, S., E-mail: ssdalui@fc.ul.pt [University of Lisbon, Physics Dept. and ICEMS, 1749-016 Lisboa (Portugal); Instituto Superior de Engenharia de Lisboa and ICEMS, 1959-007 Lisboa (Portugal); Rout, S. [University of Lisbon, Physics Dept. and ICEMS, 1749-016 Lisboa (Portugal); Silvestre, A.J. [Instituto Superior de Engenharia de Lisboa and ICEMS, 1959-007 Lisboa (Portugal); Lavareda, G. [New University of Lisbon, Mater. Sci. Dept. and CTS, 2829-516 Caparica (Portugal); Pereira, L.C.J. [Instituto Superior Técnico, ITN and CFMCUL, 2686-953 Sacavém (Portugal); Brogueira, P. [Instituto Superior Técnico, Physics Dept. and ICEMS, 1049-001 Lisboa (Portugal); Conde, O. [University of Lisbon, Physics Dept. and ICEMS, 1749-016 Lisboa (Portugal)

2013-08-01

Here we report on the structural, optical, electrical and magnetic properties of Co-doped and (Co,Mo)-codoped SnO{sub 2} thin films deposited on r-cut sapphire substrates by pulsed laser deposition. Substrate temperature during deposition was kept at 500 °C. X-ray diffraction analysis showed that the undoped and doped films are crystalline with predominant orientation along the [1 0 1] direction regardless of the doping concentration and doping element. Optical studies revealed that the presence of Mo reverts the blue shift trend observed for the Co-doped films. For the Co and Mo doping concentrations studied, the incorporation of Mo did not contribute to increase the conductivity of the films or to enhance the ferromagnetic order of the Co-doped films.

Structural and Magnetic Properties of Co-Mn-Sb Thin films

Energy Technology Data Exchange (ETDEWEB)

Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

2009-12-17

Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

CeCo5 thin films with perpendicular anisotropy grown by molecular beam epitaxy

Science.gov (United States)

Sharma, S.; Hildebrandt, E.; Major, M.; Komissinskiy, P.; Radulov, I.; Alff, L.

2018-04-01

Buffer-free, highly textured (0 0 1) oriented CeCo5 thin films showing perpendicular magnetic anisotropy were synthesized on (0 0 1) Al2O3 substrates by molecular beam epitaxy. Ce exists in a mixture of Ce3+ and Ce4+ valence states as shown by X-ray photoelectron spectroscopy. The first anisotropy constant, K1, as measured by torque magnetometry was 0.82 MJ/m3 (8.2 ×106erg /cm3) . A maximum coercivity of 5.16 kOe with a negative temperature coefficient of -0.304%K-1 and a magnetization of 527.30 emu/cm3 was measured perpendicular to the film plane at 5 K. In addition, a large anisotropy of the magnetic moment of 15.5% was observed. These magnetic parameters make CeCo5 a potential candidate material for spintronic and magnetic recording applications.

Optical and electrical properties of chemical bath deposited cobalt sulphide thin films

Energy Technology Data Exchange (ETDEWEB)

Govindasamy, Geetha [R& D Centre, Bharathiar University, Coimbatore (India); Murugasen, Priya, E-mail: priyamurugasen15@gmail.com [Department of Physics, Saveetha Engineering, Chennai, Tamil Nadu (India); Sagadevan, Suresh [Department of Physics, AMET University, Chennai, Tamil Nadu (India)

2017-01-15

Cobalt sulphide (CoS) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and the crystallite size of CoS thin film. Scanning Electron Microscope (SEM) studies reveal the surface morphology of these films. The optical properties of the CoS thin films were determined using UV-Visible absorption spectrum. The optical band gap of the thin films was found to be 1.6 eV. Optical constants such as the refractive index, the extinction coefficient and the electric susceptibility were determined. The dielectric studies were carried out at different frequencies and at different temperatures for the prepared CoS thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the thin films were determined. The AC electrical conductivity measurement was also carried out for the thin films. The activation energy was determined by using DC electrical conductivity measurement. (author)

Highly coercive thin-film nanostructures

International Nuclear Information System (INIS)

Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

2005-01-01

The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

Synthesis of nanocrystalline TiO2 thin films by liquid phase ...

Indian Academy of Sciences (India)

WINTEC

goes degradation efficiently in presence of TiO2 thin films by exposing its aqueous solution to .... Figure 6. Photodegradation of IGOR organic dye by a. bare TiO2 thin film and b. ... Meng L-J and Dos Santos M P 1993 Thin Solid Films 226 22.

A Novel Ternary CoFe2O4/CuO/CoFe2O4 as a Giant Magnetoresistance Sensor

Directory of Open Access Journals (Sweden)

Ramli

2016-12-01

Full Text Available This paper reports the results of a study relating to the synthesis of a novel ternary CoFe2O4/CuO/CoFe2O4 thin film as a giant magnetoresistance (GMR sensor. The CoFe2O4/CuO/CoFe2O4 thin film was prepared onto silicon substrate via DC magnetron sputtering with the targets facing each other. X-ray diffraction was used to determine the structure of the thin film and a 4-point method was used to measure the MR ratio. The GMR ratio is highly dependent on the ferrimagnetic (CoFe2O4 and nonmagnetic (CuO layer thickness. The maximum GMR ratio at room temperature obtained in the CoFe2O4/CuO/CoFe2O4 thin film was 70% when the CoFe2O4 and the CuO layer had a thickness of 62.5 nm and 14.4 nm respectively.

thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

Ferrite thin films: Synthesis, characterization and gas sensing properties towards LPG

Energy Technology Data Exchange (ETDEWEB)

Rao, Pratibha; Godbole, R.V. [Department of Physics, Abasaheb Garware College, Karve Road, Pune 411 004 (India); Phase, D.M. [UGC-DAE CSR Centre, Indore (India); Chikate, R.C. [Department of Chemistry, Abasaheb Garware College, Karve Road, Pune 411 004 (India); Bhagwat, Sunita, E-mail: smb.agc@gmail.com [Department of Physics, Abasaheb Garware College, Karve Road, Pune 411 004 (India)

2015-01-15

Nanocrystalline (Co, Cu, Ni, Zn) ferrite thin films have been deposited onto the Si (100) and alumina substrates by spray pyrolysis deposition technique. Respective metal chlorides and iron chloride were used as precursors. The structural properties of (Co, Cu, Ni, Zn) ferrite thin films were investigated by X-ray diffraction (XRD) technique which confirms polycrystalline nature and single phase spinel structure. The surface morphology was studied using scanning electron microscopy (SEM) which reveals spherical morphology for these films except NiFe{sub 2}O{sub 4} films that exhibit petal like structure. The optical transmittance and reflectance measurements were recorded using a double beam spectrophotometer. The optical studies reveal that the transition is direct band gap energy. The VSM analyzes reveal the predominant ferrimagnetic nature for CuFe{sub 2}O{sub 4} films. The gas sensing properties towards Liquid Petroleum Gas (LPG) revealed that ZnFe{sub 2}O{sub 4} films are sensitive at lower temperature while NiFe{sub 2}O{sub 4} films show steep rise at higher temperature. - Highlights: • (Co, Cu, Ni, Zn) ferrite thin films are synthesized by simple spray pyrolysis technique. • Homogenization of substituent within ferrite structure. • CuFe{sub 2}O{sub 4} film exhibits predominantly ferrimagnetic nature. • LPG sensing at lower temperature for ZnFe{sub 2}O{sub 4} film. • High sensitivity for NiFe{sub 2}O{sub 4} film at higher temperature due to defects created in the structure.

Electrochemically synthesized nanocrystalline spinel thin film for high performance supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Gupta, Vinay [Carbon Technology Unit, Engineering Materials Division, National Physical Laboratory, New-Delhi, 110012 (India); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan); Japan Science and Technology Agency, Kawaguchi-shi, Saitama, 332-0012 (Japan); Gupta, Shubhra; Miura, Norio [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan)

2010-06-01

Spinels are not known for their supercapacitive nature. Here, we have explored electrochemically synthesized nanostructured NiCo{sub 2}O{sub 4} spinel thin-film electrode for electrochemical supercapacitors. The nanostructured NiCo{sub 2}O{sub 4} spinel thin film exhibited a high specific capacitance value of 580 F g{sup -1} and an energy density of 32 Wh kg{sup -1} at the power density of 4 kW kg{sup -1}, accompanying with good cyclic stability. (author)

Damping constant of Co/Pt multilayer thin-film media

Energy Technology Data Exchange (ETDEWEB)

Fujita, N. [Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan); Inaba, N. [Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan)], E-mail: inaba@yz.yamagata-u.ac.jp; Kirino, F. [National University of Fine Arts and Music, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8577 (Japan); Igarashi, S.; Koike, K.; Kato, H. [Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan)

2008-11-15

Gilbert's damping constants, {alpha}, of Co(t{sub Co})/Pt (1.4 nm) multilayer thin films are investigated by Q-band FMR analysis. {alpha} is calculated from the resonance width of the FMR spectrum. With decreasing t{sub Co}, the {alpha} value decreases from 0.034 (t{sub Co}=8.7 nm) to 0.023 (t{sub Co}=1.8 nm), and then increases to 0.037 (t{sub Co}=1.0 nm). The decrease of {alpha} with t{sub Co}>1.8 nm is probably due to the eddy current loss effects. The increase of {alpha} with t{sub Co}<1.8 nm would be caused by the increase of the distortion between the Co and the Pt layers at the interface. When the magnetic field direction was changed from {theta}=90 deg. (parallel to the specimen) to {theta}=0 deg. (perpendicular to the specimen), the {alpha} of all the specimens increased, and a sharp step in {alpha} was observed around {theta}=40 deg., where the {alpha} has the maximum value.

Perpendicular magnetic anisotropy of non-epitaxial hexagonal Co{sub 50}Pt{sub 50} thin films prepared at room temperature

Energy Technology Data Exchange (ETDEWEB)

Yuan, F.T., E-mail: ftyuan@gmail.com [iSentek Ltd., Advanced Sensor Laboratory, New Taipei City 22101, Taiwan (China); Chang, H.W., E-mail: wei0208@gmail.com [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Lee, P.Y.; Chang, C.Y. [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Chi, C.C. [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ouyang, H., E-mail: houyang@mx.nthu.edu.tw [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2015-04-15

Highlights: • In this paper, we propose a non-epitaxially grown PMA thin film of disorder hexagonal Co{sub 50}Pt{sub 50} which can satisfy all the requirements at once. • Although the preparation temperature is at room temperature and no post annealing is required, the film also shows good thermal stability up to 400 °C. • Moreover, the easy-controlling single layer deposition process of the film largely enhances the feasibility of practical production. • Significant PMA is achieved in a wide range of film thickness from 2 nm to 20 nm, which expands the usage form a GMR or TMR magnetic junctions to perpendicular spin polarizer for spin current related engineering. • The presented results may open new opportunities for advanced spintronic devices. - Abstract: Non-epitaxially induced perpendicular magnetic anisotropy (PMA) of Co{sub 50}Pt{sub 50} thin films at room temperature (RT) is reported. The CoPt film having a disordered hcp structure shows a magnetocrystalline anisotropy (K{sub u}{sup RT}) of 1–2 × 10{sup 6} erg/cm{sup 3} in a wide range of layer thickness from 2 to 20 nm. K{sub u}{sup RT} of about 1 × 10{sup 6} erg/cm{sup 3} can be preserved after a 400 °C-thermal cycle in the 5-nm-thick sample. Moderate PMA, large thickness range, simple preparation process, low formation temperature but good thermal stability make presented hcp CoPt become a remarkable option for advanced spintronic devices.

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

International Nuclear Information System (INIS)

Pena, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vazquez, A.; Gomez, I.; Elizondo, P.

2011-01-01

In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2 S 3 ) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Growth and properties of lead iodide thin films by spin coating

Indian Academy of Sciences (India)

X-ray diffraction patterns revealed that the thin films possessed hexagonal structures. The thin films .... of inorganic PbI2 in an organic solvent depends on the co- ordination .... Figure 7b and c shows the absorption coefficient of both samples ...

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

Engineering the microstructure and magnetism of La2CoMnO6−δ thin films by tailoring oxygen stoichiometry

International Nuclear Information System (INIS)

Galceran, R.; Frontera, C.; Balcells, Ll.; Cisneros-Fernández, J.; López-Mir, L.; Bozzo, B.; Pomar, A.; Sandiumenge, F.; Martínez, B.; Roqueta, J.; Santiso, J.; Bagués, N.

2014-01-01

We report on the magnetic and structural properties of ferromagnetic-insulating La 2 CoMnO 6−δ thin films grown on top of (001) SrTiO 3 substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields and remanence) of the hysteresis loops. Both Curie temperature and magnetic hysteresis turn out to be dependent on the oxygen stoichiometry. In situ annealing conditions allow tailoring the oxygen content of the films, therefore controlling their microstructure and magnetic properties

Phase transitions in Fe_0_._5Co_0_._5 (110) thin films

International Nuclear Information System (INIS)

Ramírez-Dámaso, G.; Castillo-Alvarado, F.L.; Rojas-Hernández, E.

2016-01-01

In this paper, we present calculations for two second-order phase transitions in (110) Fe_0_._5Co_0_._5 thin films with 11, 15, and 19 monoatomic layers. The lattice and magnetic transitions are based on thermodynamic equilibrium considerations of the magnetic alloy. The procedure proposed by Valenta and Sukiennicki was applied to calculate the composition x(i), the lattice order parameter t(i), and the magnetic order parameter σ(i) as a function of temperature T. We confirmed that both phase transitions, lattice and magnetic, are of the second order, in accordance with experimental results in the literature. The obtained behavior of these parameters indicates their inhomogeneity due to the boundary conditions on the surfaces of the thin film.

Room-temperature synthesis and characterization of porous CeO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Chu, Dewei; Masuda, Yoshitake; Ohji, Tatsuki; Kato, Kazumi [National Institute of Advanced Industrial Science and Technology (AIST), Anagahora, Shimoshidami, Moriyama-ku, Nagoya (Japan)

2012-01-15

CeO{sub 2} thin films with hexagonal-shaped pores were successfully prepared by a facile electrodeposition at room temperature combined with an etching process. By using electrodeposited ZnO nanorods as a soft template, the morphology, and microstructure of the CeO{sub 2} could be controlled. TEM observation indicated that as-prepared CeO{sub 2} film is composed of nanocrystals with average size of several nanometers, while XPS analysis showed the coexistence of Ce{sup 3+} and Ce{sup 4+} in the film. The photoluminescence properties of CeO{sub 2} films were measured, which showed much higher sensitivity compared to bare substrate. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhancement of the electrical properties of (Eu,Zn) co-doped BiFeO3 thin films prepared by using chemical solution deposition

Science.gov (United States)

Kim, Youn-Jang; Kim, Jin Won; Kim, Hae Jin; Kim, Sang Su

2013-04-01

We prepared pure BiFeO3 (BFO) and (Bi0.9Eu0.1)(Fe0.975Zn0.025)O3-δ (BEFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BEFZO thin film. The leakage current density of the BEFZO thin film was three orders of magnitude lower than that of the pure BFO, 3.93 × 10-6 A/cm2 at 100 kV/cm. The remnant polarization (2 P r ) and the coercive electric field (2 E c ) of the BEFZO thin film were 42 µC/cm2 and 898 kV/cm at an applied electric field of 1000 kV/cm and at a frequency of 1 kHz and the values decreased with increasing measurement frequency to 18 µC/cm2 and 866 kV/cm at 10 kHz, respectively. Also, the fatigue endurances were evaluated at peak voltages of 8-10 V after 1.44 × 1010 cycles in the BEFZO thin films and were 70 ˜ 90% of the initial values. We also confirmed that the 2 P r was fairly saturated at measurement frequency about 30 kHz for the BEFZO thin film.

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

Energy Technology Data Exchange (ETDEWEB)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

International Nuclear Information System (INIS)

Drera, G.; Mozzati, M.C.; Colombi, P.; Salvinelli, G.; Pagliara, S.; Visentin, D.; Sangaletti, L.

2015-01-01

Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al 2 O 3 substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al 2 O 3 substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Drera, G. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Mozzati, M.C. [CNISM, Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy); Colombi, P. [CSMT Gestione s.c.a.r.l, Via Branze 45, 25123 Brescia (Italy); Salvinelli, G.; Pagliara, S.; Visentin, D. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Sangaletti, L., E-mail: sangalet@dmf.unicatt.it [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy)

2015-09-01

Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al{sub 2}O{sub 3} substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al{sub 2}O{sub 3} substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions.

Topotactic synthesis of strontium cobalt oxyhydride thin film with perovskite structure

OpenAIRE

Tsukasa Katayama; Akira Chikamatsu; Hideyuki Kamisaka; Yuichi Yokoyama; Yasuyuki Hirata; Hiroki Wadati; Tomoteru Fukumura; Tetsuya Hasegawa

2015-01-01

The substitution of hydride anions (H−) into transition metal oxides has recently become possible through topotactic reactions or high-pressure synthesis methods. However, the fabrication of oxyhydrides is still difficult because of their inherently less-stable frameworks. In this study, we successfully fabricated perovskite SrCoOxHy thin films via the topotactic hydride doping of brownmillerite SrCoO2.5 epitaxial thin films with CaH2. The perovskite-type cation framework was maintained durin...

Magneto-optic properties and optical parameter of thin MnCo films

Directory of Open Access Journals (Sweden)

E Attaran Kakhki

2009-09-01

Full Text Available Having precise hysterics loop of thin ferroelectric and ferromagnetic layers for optical switching and optical storages are important. A hysterieses loop can be achieved from a phenomenon call the magneto-optic effect. The magneto-optic effect is the rotation of a linear polarized electromagnetic wave propagated through a ferromagnetic medium. When light is transmitted through a layer of magnetic material the result is called the Faraday effects and in the reflection mode Kerr effect. In the present work we prepared a thin layer of MnxCo3-xO4 (0≤ x ≤ 1 and a binary form of MnO/Co3O4 by the spray pyrolysis method. The films have been characterized by a special set up of magneto-optic hysterics loop plotter containing a polarized He- Ne laser beam and a special electronic circuit. Faraday rotation were measured for these films by hysterics loop plotter and their optical properties were also obtained by spatial software designed for this purpose according to Swane Poel theoretical method. The measurements show that the samples at diluted Mn study has are ferromagnetic and the magneto-optic rotation show a good enhance respect to the single Co layers. Also, the study has shown that the MnCo oxide layer have two different energy gaps and by increasing of Mn this energy decreases and fall to 0.13 eV.

Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

Science.gov (United States)

Sathisha, D.; Naik, K. Gopalakrishna

2018-05-01

Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

Structure and characterization of Sn, Al co-doped zinc oxide thin films prepared by sol–gel dip-coating process

Energy Technology Data Exchange (ETDEWEB)

Lee, Min-I [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Legrand, David [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Lerondel, Gilles [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taiwan (China)

2014-11-03

Transparent conductive zinc oxide co-doped with tin and aluminum (TAZO) thin films were prepared via sol–gel dip-coating process. Non-toxic ethanol was used in this study instead of 2-methoxyethanol used in conventional work. Dip-coating was repeated several times to obtain relatively thick films consisting of six layers. The films were then annealed at 500 °C for 1 h in air or in vacuum and not subsequently as employed in other studies. The X-ray diffraction patterns indicated that all the samples revealed a single phase of hexagonal ZnO polycrystalline structure with a main peak of (002). The optical band gap and resistivity of the TAZO films were in the ranges of 3.28 to 3.32 eV and 0.52 to 575.25 Ω cm, respectively. The 1.0 at.% Sn, 1.0 at.% Al co-doped ZnO thin film annealed in vacuum was found to have a better photoelectrochemical performance with photocurrent density of about 0.28 mA/cm{sup 2} at a bias of 0.5 V vs. SCE under a 300 W Xe lamp illumination with the intensity of 100 mW/cm{sup 2}. Compared to the same dopant concentration but annealed in air (∼ 0.05 mA/cm{sup 2} bias 0.5 V vs. SCE), the photocurrent density of the film annealed in vacuum was 5 times higher than the film annealed in air. Through electrochemical measurements, we found that the dopant concentration of Sn plays an important role in TAZO that affected photocurrent density, stability of water splitting and anti-corrosion. - Highlights: • Al, Sn co-doped ZnO (TAZO) films was synthesized by sol–gel process. • The parameters of TAZO films were dopant concentration and annealed ambient. • The photoelectrochemical characteristics of TAZO films were investigated.

Deposition of magnetoelectric hexaferrite thin films on substrates of silicon

Energy Technology Data Exchange (ETDEWEB)

Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

2016-12-15

Magnetoelectric M-type hexaferrite thin films (SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19}) were deposited using Pulsed Laser Deposition (PLD) technique on Silicon substrate. A conductive oxide layer of Indium-Tin Oxide (ITO) was deposited as a buffer layer with the dual purposes of 1) to reduce lattice mismatch between the film and silicon and 2) to lower applied voltages to observe magnetoelectric effects at room temperature on Silicon based devices. The film exhibited magnetoelectric effects as confirmed by vibrating sample magnetometer (VSM) techniques in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe magnetoelectric effects was typically about 1000 times larger. The magnetoelectric thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance techniques. We measured saturation magnetization of 650 G, and coercive field of about 150 Oe for these thin films. The change in remanence magnetization was measured in the presence of DC voltages and the changes in remanence were in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a magnetoelectric coupling, α, of 1.36×10{sup −9} s m{sup −1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

Effect of thermal treatment on the CO and H2O sensing properties of MoO3 thin films

International Nuclear Information System (INIS)

Torres-Luengo, M; Martínez, H M; Torres, J; López-Carreño, L D

2014-01-01

MoO 3 thin films were prepared on Corning glass substrates using the chemical spray pyrolysis technique. A 0.1 M solution of ammonium molybdate tetrahydrate was used as precursor one. 5ml and 20 ml of the precursor solution was sprayed with the substrate temperature maintained at 623 K. Thermal treatment involved drying at 393 K for 8 h with continuous N 2 flow, followed by a vacuum annealing at 473 K for 2 h in a residual inert atmosphere. XRD indicates that the crystallographic structure corresponded to the orthorhombic α-MoO 3 phase. Electrical characterization was carried out in a system operating under high vacuum conditions. The samples could be cooled down to LN 2 temperature and heated in a controlled way up to 473 K. To elucidate the electrical response of the films to CO and H 2 O exposure, the I-V characteristic curve was measured over the whole temperature range. The electrical resistance of the films decreased with increasing temperature. In 5 ml films, the sensitivity to both gases increased which thermal treatment, reaching values between 40% and 60% at room temperature. On the contrary, the 20 ml films' sensitivity decreased almost half of their original values after thermal treatment

Nano structured TiO2 thin films by polymeric precursor method

International Nuclear Information System (INIS)

Stroppa, Daniel Grando; Giraldi, Tania Regina; Leite, Edson Roberto; Varela, Jose Arana; Longo, Elson

2008-01-01

This work focuses in optimizing setup for obtaining TiO 2 thin films by polymeric precursor route due to its advantages on stoichiometric and morphological control. Precursor stoichiometry, synthesis pH, solids concentration and rotation speed at deposition were optimized evaluating thin films morphology and thickness. Thermogravimetry and NMR were applied for precursor's characterization and AFM, XRD and ellipsometry for thin films evaluation. Results showed successful attainment of homogeneous nanocrystalline anatase TiO 2 thin films with outstanding control over morphological characteristics, mean grain size of 17 nm, packing densities between 57 and 75%, estimated surface areas of 90 m 2 /g and monolayers thickness within 20 and 128 nm. (author)

Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

International Nuclear Information System (INIS)

Patel, S.S.; Patel, B.H.; Patel, T.S.

2008-01-01

An Al/p-AgGaTe 2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe 2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Chemically deposited Sb2S3 thin films for optical recording

International Nuclear Information System (INIS)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B; O'Brien, J J; Liu, J

2010-01-01

Laser induced changes in the properties of Sb 2 S 3 thin films prepared by chemical bath deposition are described in this paper. Sb 2 S 3 thin films of thickness 550 nm were deposited from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 0 C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Surface, interface and thin film characterization of nano-materials using synchrotron radiation

International Nuclear Information System (INIS)

Kimura, Shigeru; Kobayashi, Keisuke

2005-01-01

From the results of studies in the nanotechnology support project of the Ministry of Education, Culture, Sports, Science and Technology of Japan, several investigations on the surface, interface and thin film characterization of nano-materials are described; (1) the MgB 2 thin film by X-ray diffraction, (2) the magnetism of the Pt thin film on a Co film by X-ray magnetic circular dichroism measurement, (3) the structure and physical properties of oxygen molecules absorbed in a micro hole of the cheleted polymer crystal by the direct observation in X-ray powder diffraction, and (4) the thin film gate insulator with a large dielectric constant, thermally treated HfO 2 /SiO 2 /Si, by X-ray photoelectron spectroscopy. (M.H.)

NMR-ON on 60CoCo(fcc, hcp, thin film), 52MnCo(fcc), and 90NbCo(fcc)

International Nuclear Information System (INIS)

Zech, E.; Hagn, E.; Ernst, H.; Eska, G.

1978-01-01

With the NMR-ON method the magnetic hyperfine splitting constant of dilute impurities in a ferromagnetic host material (Fe, Ni, Co) can be determined with high accuracy (10 -3 ...10 -4 ). Only few NMR-ON experiments with Co as host lattice have been performed up to now. In constrast to Fe and Ni, two stable modifications exist for Co (fcc and hcp). In the hcp case the magnetic hyperfine field is expected to be anisotropic. Due to the electric field gradient, which is present in this case, a (small) guadrupole interaction is superimposed to the magnetic hyperfine interaction. For 60 CoCo measurements were done on a fcc foil, a hcp single crystal, and on thin films, which were prepared by evaporating Co into glass. For 52 MnCo and 90 NbCo measurements were performed for fcc Co. (Auth.)

Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

Directory of Open Access Journals (Sweden)

Rachana Gupta

2015-09-01

Full Text Available Cobalt nitride (Co-N thin films prepared using a reactive magnetron sputtering process are studied in this work. During the thin film deposition process, the relative nitrogen gas flow (RN2 was varied. As RN2 increases, Co(N, Co4N, Co3N and CoN phases are formed. An incremental increase in RN2, after emergence of Co4N phase at RN2 = 10%, results in a linear increase of the lattice constant (a of Co4N. For RN2 = 30%, a maximizes and becomes comparable to its theoretical value. An expansion in a of Co4N, results in an enhancement of the magnetic moment, to the extent that it becomes even larger than pure Co. Such larger than pure metal magnetic moment for tetra-metal nitrides (M4N have been theoretically predicted. Incorporation of N atoms in M4N configuration results in an expansion of a (relative to pure metal and enhances the itinerary of conduction band electrons leading to larger than pure metal magnetic moment for M4N compounds. Though a higher (than pure Fe magnetic moment for Fe4N thin films has been evidenced experimentally, higher (than pure Co magnetic moment is evidenced in this work.

Review of thin film superconductivity

International Nuclear Information System (INIS)

Kihlstrom, K.E.

1989-01-01

Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds

Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

Directory of Open Access Journals (Sweden)

Olga Korostynska

2002-08-01

Full Text Available Thin films of Tellurium dioxide (TeO2 were investigated for γ-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co γ-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and γ-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time γ-radiation dosimetry.

Density functional study of BiSbTeSe{sub 2} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Mohammadpourrad, Zahra; Abolhassani, Mohammadreza [Department of Physics, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2017-08-15

In this work, using density functional theory calculations, we have investigated the band topology of bulk BiSbTeSe{sub 2} and its thin film electronic properties in several thicknesses. It is one member of the quaternary compounds Bi{sub 2-x}Sb{sub x}Te{sub 3-y}Se{sub y} (BSTS) with the best intrinsic bulk insulating behavior. Based on our calculations we have found that a band inversion at Γ-point is induced when spin-orbit coupling is turned on, with an energy gap of about 0.318 eV. The film thickness has an effect on the surface states such that a gap opens at Dirac point in 6 quintuple-layers film and with decrease in thickness, the magnitude of the gap increases. The atomic contributions have been mapped out for the first few layers of thin films to demonstrate the surface states. The relative charge density has been calculated layer-wise and the penetration depth of the surface states into the bulk region is found to be about 2.5-3.5 quintuple layers, depending on the termination species of thin films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

Directory of Open Access Journals (Sweden)

Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Optical properties of CeO 2 thin films

Indian Academy of Sciences (India)

Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly ...

Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

Science.gov (United States)

Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

2014-04-23

A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thickness dependence of magnetic anisotropy and domains in amorphous Co{sub 40}Fe{sub 40}B{sub 20} thin films grown on PET flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Tang, Zhenhua, E-mail: tangzhenhua1988@163.com [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Ni, Hao [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); College of science, China university of petroleum, Qingdao, Shandong 266580 China (China); Lu, Biao [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Zheng, Ming [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Huang, Yong-An [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Lu, Sheng-Guo, E-mail: sglu@gdut.edu.cn [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Tang, Minghua [Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China); Gao, Ju [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)

2017-03-15

The amorphous Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) films (5–200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film. - Graphical abstract: The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. - Highlights: • The thickness effect on the magnetic properties in amorphous CoFeB thin films grown on flexible substrates was investigated. • The in-plane uniaxial magnetic anisotropy induced by strains was observed. • A critical thickness of ~ 150 nm for the flexible CoFeB thin film on PET substrate was obtained.

Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Luo, Junming; Tian, Xinlong; Wu, Shoukun; Chen, Chun; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2014-01-01

Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

Nonlinear optical properties of Nd3+-Li+ co-doped ZnS-PVP thin films

Science.gov (United States)

Talwatkar, S. S.; Sunatkari, A. L.; Tamgadge, Y. S.; Muley, G. G.

2018-04-01

The nonlinear optical properties of Nd3+-Li+ co-doped ZnS-PVP nanocomposite were studied using a continuous wave (CW) He-Ne laser (λ = 632.8 nm)by z-scan technique. The nonlinear refractive index (n2), absorption coefficient (β) and third order nonlinear susceptibility (χ(3)) of PVP thin films embedded with Nd3+-Li+ co-doped ZnS NPs was found in the order of 10-7 cm2/W, 10-6 cm/W and 10-7 esu respectively. The nonlinearity found increasing with Nd3+-Li+ co-dopant concentration. Based on the results, it is proposed that this material is a new class of luminescent material suitable in optoelectronics devices application, especially in light-emitting devices, electroluminescent devices, display devices, etc.

Tunnelling spectroscopy of BaFe{sub 2}As{sub 2}/Au/PbIn thin film junctions

Energy Technology Data Exchange (ETDEWEB)

Doering, Sebastian; Schmidt, Stefan; Schmidl, Frank; Tympel, Volker; Grosse, Veit; Seidel, Paul [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena (Germany); Haindl, Silvia; Iida, Kazumasa; Kurth, Fritz; Holzapfel, Bernhard [IFW Dresden, Institut fuer Metallische Werkstoffe, Dresden (Germany)

2011-07-01

Tunnelling spectroscopy is an important tool to investigate the properties of iron-based superconductors. In contrast to commonly used point contact Andreev reflection (PCAR) technique, we fabricated hybrid superconductor / normal metal / superconductor (SNS) thin film structures, with tunable barrier thickness and area. For the base electrode we use Ba(Fe{sub 0.9}Co{sub 0.1}){sub 2}As{sub 2} thin films, produced via pulsed laser deposition (PLD). A gold layer was sputtered to form the barrier, while the counter electrode material is the conventional superconductor PbIn with a T{sub c} of 7.2 K. For temperatures below 7.2 K the spectrum shows a subharmonic gap structure (SGS), described by an extended model of Octavio, Tinkham, Blonder and Klapwijk (OTBK), while at higher temperatures the SGS vanishes and an SN-like behaviour can be observed.

Cathodic electrodeposition of CuInSe sub 2 thin films

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Galiano, E; Herrero, J [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1991-01-01

In order to study the preparation process of CuInSe{sub 2} thin films by a one-step electrodeposition method, thin films of the compound were prepared from aqueous citric acid (C{sub 6}H{sub 8}O{sub 7} . H{sub 2}O) plating baths onto titanium substrates. During electrodeposition, the bath composition and deposition potential were changed to obtain stoichiometric thin films. In general, close to stoichiometry, layers rich in selenium were observed, and this excess of selenium was removed after heat treatment. Best quality films were obtained after annealing at 400deg C during 15 min. X-ray diffraction showed the formation of CuInSe{sub 2} films, the chalcopyrite structure, at heating treatment temperatures higher than 350deg C. Optical measurements showed that the band gap of the deposited material was 0.99 eV. (orig.).

Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions

International Nuclear Information System (INIS)

Kaiser, A.; Banerjee, D.; Rata, A.D.; Wiemann, C.; Cramm, S.; Schneider, C.M.

2009-01-01

Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co 2 MnSi (CMS) and Co 2 FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO 2 /V/CMS/MgO/CFS and SiO 2 /V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co 2 MnSi

Influence of Al doping on structural and optical properties of Mg–Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun

2014-01-01

Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of

A comparative investigation on structure and multiferroic properties of bismuth ferrite thin films by multielement co-doping

Energy Technology Data Exchange (ETDEWEB)

Dong, Guohua; Tan, Guoqiang, E-mail: tan3114@163.com; Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

2014-12-15

Highlights: • Multielement (Tb, Cr and Mn) co-doped BiFeO{sub 3} films were fabricated by CSD method. • Multielement co-doping induces a structural transition. • It is found effective to stabilize the valence of Fe ions at +3 by the strategy. • The co-doping at A/B-sites gives rise to the superior multiferroic properties. - Abstract: (Tb, Cr and Mn) multielement co-doped BiFeO{sub 3} (BTFCMO) thin films were prepared by the chemical solution deposition method on fluorine doped tin oxide (FTO) substrates. X-ray diffraction, Rietveld refinement and Raman analyses revealed that a phase transition from rhombohedral to triclinic structure occurs in the multielement co-doped BiFeO{sub 3} films. It is found that the doping is conducive to stabilizing the valence of Fe ions and reducing leakage current. In addition, the highly enhanced ferroelectric properties with a huge remanent polarization (2P{sub r}) of 239.6 μC/cm{sup 2} and a low coercive field (2E{sub c}) of 615.6 kV/cm are ascribed to the well film texture, the structure transition and the reduced leakage current by the co-doping. Moreover, the structure transition is the dominant factor resulting in the significant enhancement observed in magnetization (M{sub s} ∼ 10.5 emu/cm{sup 3}), owing to the collapse of the space-modulated spin structure. In this contribution, these results demonstrate that the multielement co-doping is in favor of the enhanced multiferroic properties of the BFO films for possible multifunctional applications.

One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

Science.gov (United States)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

2017-04-01

Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

Synthesis and magnetic properties of the thin film exchange spring system of MnBi/FeCo

Science.gov (United States)

Sabet, S.; Hildebrandt, E.; Alff, L.

2017-10-01

Manganese bismuth thin films with a nominal thickness of ∼40 nm were grown at room temperature onto quartz glass substrate in a DC magnetron sputtering unit. In contrast to the usual multilayer approach, the MnBi films were deposited using a single sputtering target with a stoichiometry of Mn55Bi45 (at. %). A subsequent in-situ annealing step was performed in vacuum in order to form the ferromagnetic LTP of MnBi. X-ray diffraction confirmed the formation of a textured LTP MnBi hard phase after annealing at 330 °C. This film shows a maximum saturation magnetization of 530 emu/cm3, high out-of-plane coercivity of 15 kOe induced by unreacted bismuth. The exchange coupling effect was investigated by deposition of a second layer of FeCo with 1 nm and 2 nm thickness onto the LTP MnBi films. The MnBi/FeCo double layer showed as expected higher saturation magnetization with increasing thickness of the FeCo layer while the coercive field remained constant. The fabrication of the MnBi/FeCo double layer for an exchange spring magnet was facilitated by deposition from a single stoichiometric target.