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Sample records for cmos detector array

  1. Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System

    Directory of Open Access Journals (Sweden)

    Jong-Ryul Yang

    2016-03-01

    Full Text Available A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s.

  2. Characterization of an x-ray hybrid CMOS detector with low interpixel capacitive crosstalk

    OpenAIRE

    Griffith, Christopher V.; Bongiorno, Stephen D.; Burrows, David N.; Falcone, Abraham D.; Prieskorn, Zachary R.

    2012-01-01

    We present the results of x-ray measurements on a hybrid CMOS detector that uses a H2RG ROIC and a unique bonding structure. The silicon absorber array has a 36{\\mu}m pixel size, and the readout array has a pitch of 18{\\mu}m; but only one readout circuit line is bonded to each 36x36{\\mu}m absorber pixel. This unique bonding structure gives the readout an effective pitch of 36{\\mu}m. We find the increased pitch between readout bonds significantly reduces the interpixel capacitance of the CMOS ...

  3. Encapsulated thermopile detector array for IR microspectrometer

    NARCIS (Netherlands)

    Wu, H.; Emadi, A.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    The miniaturized IR spectrometer discussed in this paper is comprised of: slit, planar imaging diffraction grating and Thermo-Electric (TE) detector array, which is fabricated using CMOS compatible MEMS technology. The resolving power is maximized by spacing the TE elements at an as narrow as

  4. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-04-08

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  5. Small Pixel Hybrid CMOS X-ray Detectors

    Science.gov (United States)

    Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

    2018-01-01

    Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

  6. A CMOS ASIC Design for SiPM Arrays.

    Science.gov (United States)

    Dey, Samrat; Banks, Lushon; Chen, Shaw-Pin; Xu, Wenbin; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

    2011-12-01

    Our lab has previously reported on novel board-level readout electronics for an 8×8 silicon photomultiplier (SiPM) array featuring row/column summation technique to reduce the hardware requirements for signal processing. We are taking the next step by implementing a monolithic CMOS chip which is based on the row-column architecture. In addition, this paper explores the option of using diagonal summation as well as calibration to compensate for temperature and process variations. Further description of a timing pickoff signal which aligns all of the positioning (spatial channels) pulses in the array is described. The ASIC design is targeted to be scalable with the detector size and flexible to accommodate detectors from different vendors. This paper focuses on circuit implementation issues associated with the design of the ASIC to interface our Phase II MiCES FPGA board with a SiPM array. Moreover, a discussion is provided for strategies to eventually integrate all the analog and mixed-signal electronics with the SiPM, on either a single-silicon substrate or multi-chip module (MCM).

  7. Linear analysis of signal and noise characteristics of a nonlinear CMOS active-pixel detector for mammography

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Seungman [School of Mechanical Engineering, Pusan National University, Busan 46241 (Korea, Republic of); Kim, Ho Kyung, E-mail: hokyung@pusan.ac.kr [School of Mechanical Engineering, Pusan National University, Busan 46241 (Korea, Republic of); Center for Advanced Medical Engineering Research, Pusan National University, Busan 46241 (Korea, Republic of); Han, Jong Chul; Kam, Soohwa [School of Mechanical Engineering, Pusan National University, Busan 46241 (Korea, Republic of); Youn, Hanbean [Department of Radiation Oncology, Pusan National University Yangsan Hospital, Yangsan, Gyeongsangnam-do 50612 (Korea, Republic of); Cunningham, Ian A. [Robarts Research Institute, Western University, London, Ontario N6A 5C1 (Canada)

    2017-03-01

    The imaging properties of a complementary metal-oxide-semiconductor (CMOS) active-pixel photodiode array coupled to a thin gadolinium-based granular phosphor screen with a fiber-optic faceplate are investigated. It is shown that this system has a nonlinear response at low detector exposure levels (<10 mR), resulting in an over-estimation of the detective quantum efficiency (DQE) by a factor of two in some cases. Errors in performance metrics on this scale make it difficult to compare new technologies with established systems and predict performance benchmarks that can be achieved in practice and help understand performance bottlenecks. It is shown the CMOS response is described by a power-law model that can be used to linearize image data. Linearization removed an unexpected dependence of the DQE on detector exposure level. - Highlights: • A nonlinear response of a CMOS detector at low exposure levels can overestimate DQE. • A power-law form can model the response of a CMOS detector at low exposure levels, and can be used to linearize image data. • Performance evaluation of nonlinear imaging systems must incorporate adequate linearizations.

  8. Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

    International Nuclear Information System (INIS)

    Zhang, L.; Wang, M.; Fu, M.; Zhang, Y.; Yan, W.

    2017-01-01

    The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm 2 .

  9. Characterizing Subpixel Spatial Resolution of a Hybrid CMOS Detector

    Science.gov (United States)

    Bray, Evan; Burrows, Dave; Chattopadhyay, Tanmoy; Falcone, Abraham; Hull, Samuel; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

    2018-01-01

    The detection of X-rays is a unique process relative to other wavelengths, and allows for some novel features that increase the scientific yield of a single observation. Unlike lower photon energies, X-rays liberate a large number of electrons from the silicon absorber array of the detector. This number is usually on the order of several hundred to a thousand for moderate-energy X-rays. These electrons tend to diffuse outward into what is referred to as the charge cloud. This cloud can then be picked up by several pixels, forming a specific pattern based on the exact incident location. By conducting the first ever “mesh experiment" on a hybrid CMOS detector (HCD), we have experimentally determined the charge cloud shape and used it to characterize responsivity of the detector with subpixel spatial resolution.

  10. Fully integrated CMOS pixel detector for high energy particles

    International Nuclear Information System (INIS)

    Vanstraelen, G.; Debusschere, I.; Claeys, C.; Declerck, G.

    1989-01-01

    A novel type of position and energy sensitive, monolithic pixel array with integrated readout electronics is proposed. Special features of the design are a reduction of the number of output channels and of the amount of output data, and the use of transistors on the high resistivity silicon. The number of output channels for the detector array is reduced by handling in parallel a number of pixels, chosen as a function of the time resolution required for the system, and by the use of an address decoder. A further reduction of data is achieved by reading out only those pixels which have been activated. The pixel detector circuit will be realized in a 3 μm p-well CMOS process, which is optimized for the full integration of readout electronics and detector diodes on high resistivity Si. A retrograde well is formed by means of a high energy implantation, followed by the appropriate temperature steps. The optimization of the well shape takes into account the high substrate bias applied during the detector operation. The design is largely based on the use of MOS transistors on the high resistivity silicon itself. These have proven to perform as well as transistors on standard doped substrate. The basic building elements as well as the design strategy of the integrated pixel detector are presented in detail. (orig.)

  11. Recent X-ray hybrid CMOS detector developments and measurements

    Science.gov (United States)

    Hull, Samuel V.; Falcone, Abraham D.; Burrows, David N.; Wages, Mitchell; Chattopadhyay, Tanmoy; McQuaide, Maria; Bray, Evan; Kern, Matthew

    2017-08-01

    The Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors (TIS), have progressed their efforts to improve soft X-ray Hybrid CMOS detector (HCD) technology on multiple fronts. Having newly acquired a Teledyne cryogenic SIDECARTM ASIC for use with HxRG devices, measurements were performed with an H2RG HCD and the cooled SIDECARTM. We report new energy resolution and read noise measurements, which show a significant improvement over room temperature SIDECARTM operation. Further, in order to meet the demands of future high-throughput and high spatial resolution X-ray observatories, detectors with fast readout and small pixel sizes are being developed. We report on characteristics of new X-ray HCDs with 12.5 micron pitch that include in-pixel CDS circuitry and crosstalk-eliminating CTIA amplifiers. In addition, PSU and TIS are developing a new large-scale array Speedster-EXD device. The original 64 × 64 pixel Speedster-EXD prototype used comparators in each pixel to enable event driven readout with order of magnitude higher effective readout rates, which will now be implemented in a 550 × 550 pixel device. Finally, the detector lab is involved in a sounding rocket mission that is slated to fly in 2018 with an off-plane reflection grating array and an H2RG X-ray HCD. We report on the planned detector configuration for this mission, which will increase the NASA technology readiness level of X-ray HCDs to TRL 9.

  12. Large Format CMOS-based Detectors for Diffraction Studies

    Science.gov (United States)

    Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

    2013-03-01

    Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

  13. Large Format CMOS-based Detectors for Diffraction Studies

    International Nuclear Information System (INIS)

    Thompson, A C; Westbrook, E M; Nix, J C; Achterkirchen, T G

    2013-01-01

    Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

  14. Infrared detectors and focal plane arrays II; Proceedings of the Meeting, Orlando, FL, Apr. 23, 24, 1992

    Science.gov (United States)

    Dereniak, Eustace L.; Sampson, Robert E.

    The present conference discusses Schottky-barrier IR image sensors, SWIR and MWIR Schottky-barrier imagers, a 640 x 640 PtSi, models of nonlinearities in focal plane arrays, retinal function relative to IRT focal plane arrays, a solid-state pyroelectric imager, and electrolyte electroreflectance spectroscopies for the ion-implanted HgCdTe with thermal annealing. Also discussed are HgCdTe hybrid focal plane arrays for thermoelectrically cooled applications, a novel IR detector plasma-edge detector, and IR detector circuits using monolithic CMOS amps with InSb detectors. (No individual items are abstracted in this volume)

  15. Contact CMOS imaging of gaseous oxygen sensor array.

    Science.gov (United States)

    Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

    2011-10-01

    We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

  16. Standard practice for radiological examination using digital detector arrays

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice establishes the minimum requirements for radiological examination for metallic and nonmetallic material using a digital detector array (DDA) system. 1.2 The requirements in this practice are intended to control the quality of radiologic images and are not intended to establish acceptance criteria for parts or materials. 1.3 This practice covers the radiologic examination with DDAs including DDAs described in Practice E2597 such as a device that contains a photoconductor attached to a Thin Film Transistor (TFT) read out structure, a device that has a phosphor coupled directly to an amorphous silicon read-out structure, and devices where a phosphor is coupled to a CMOS (Complementary metal–oxide–semiconductor) array, a Linear Detector Array (LDA) or a CCD (charge coupled device) crystalline silicon read-out structure. 1.4 The DDA shall be selected for an NDT application based on knowledge of the technology described in Guide , and of the selected DDA properties provided by the manufactu...

  17. Cryogenic and radiation-hard asic for interfacing large format NIR/SWIR detector arrays

    Science.gov (United States)

    Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

    2017-11-01

    For scientific and earth observation space missions, weight and power consumption is usually a critical factor. In order to obtain better vehicle integration, efficiency and controllability for large format NIR/SWIR detector arrays, a prototype ASIC is designed. It performs multiple detector array interfacing, power regulation and data acquisition operations inside the cryogenic chambers. Both operation commands and imaging data are communicated via the SpaceWire interface which will significantly reduce the number of wire goes in and out the cryogenic chamber. This "ASIC" prototype is realized in 0.18um CMOS technology and is designed for radiation hardness.

  18. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  19. Application of CMOS charge-sensitive preamplifier in triple-GEM detector

    International Nuclear Information System (INIS)

    Lai Yongfang; Li Jin; Chinese Academy of Sciences, Beijing; Deng Zhi; Li Yulan; Liu Yinong; Li Yuanjing

    2006-01-01

    Among the various micro-pattern gas detectors (MPGD) that are available, the gas electron multiplier (GEM) detector is an attractive gas detector that has been used in particle physics experiments. However the GEM detector usually needs thousands of preamplifier units for its large number of micro-pattern readout strips or pads, which leads to considerable difficulties and complexities for front end electronics (FEE). Nowadays, by making use of complementary metal-oxide semiconductor (CMOS)-based application specific integrated circuit (ASIC), it is feasible to integrate hundreds of preamplifier units and other signal process circuits in a small-sized chip, which can be bound to the readout strips or pads of a micro-pattern particle detector (MPPD). Therefore, CMOS ASIC may provide an ideal solution to the readout problem of MPPD. In this article, a triple GEM detector is constructed and one of its readout strips is connected to a CMOS charge-sensitive preamplifier chip. The chip was exposed to an 55 Fe source of 5.9 kev X-ray, and the amplitude spectrum of the chip was tested, and it was found that the energy resolution was approximately 27%, which indicates that the chip can be used in triple GEM detectors. (authors)

  20. A 10 MHz micropower CMOS front end for direct readout of pixel detectors

    International Nuclear Information System (INIS)

    Campbell, M.; Heijne, E.H.M.; Jarron, P.; Krummenacher, F.; Enz, C.C.; Declercq, M.; Vittoz, E.; Viertel, G.

    1990-01-01

    In the framework of the CERN-LAA project for detector R and D, a micropower circuit of 200 μmx200 μm with a current amplifier, a latched comparator and a digital memory element has been tested electrically and operated in connection with linear silicon detector arrays. The experimental direct-readout (DRO) chip comprises a matrix of 9x12 circuit cells and has been manufactured in a 3 μm CMOS technology. Particles and X-ray photons below 22 keV were detected, and thresholds can be set between 2000 and 20000 e - . The noise is less than 4 keV FWHM or 500 e - rms and the power dissipation per pixel element is 30 μW. The chip can be coupled to a detector matrix using bump bonding. (orig.)

  1. Development of a lens-coupled CMOS detector for an X-ray inspection system

    International Nuclear Information System (INIS)

    Kim, Ho Kyung; Ahn, Jung Keun; Cho, Gyuseong

    2005-01-01

    A digital X-ray imaging detector based on a complementary metal-oxide-semiconductor (CMOS) image sensor has been developed for X-ray non-destructive inspection applications. This is a cost-effective solution because of the availability of cheap commercial standard CMOS image sensors. The detector configuration adopts an indirect X-ray detection method by using scintillation material and lens assembly. As a feasibility test of the developed lens-coupled CMOS detector as an X-ray inspection system, we have acquired X-ray projection images under a variety of imaging conditions. The results show that the projected image is reasonably acceptable in typical non-destructive testing (NDT). However, the developed detector may not be appropriate for laminography due to a low light-collection efficiency of lens assembly. In this paper, construction of the lens-coupled CMOS detector and its specifications are described, and the experimental results are presented. Using the analysis of quantum accounting diagram, inefficiency of the lens-coupling method is discussed

  2. Development of Fast and High Precision CMOS Pixel Sensors for an ILC Vertex Detector

    CERN Document Server

    Hu-Guo, Christine

    2010-01-01

    The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \\mu s read-out time. Its performances are quite close to the ILD vertex detector specifications, showing that the sensor architecture can presumably be evolved to meet these specifications exactly. Starting from the existing architecture and achieved performances, the paper will expose the details of how the sensor will be evolved in the coming 2-3 years in perspective of the ILD Detector Baseline Document, to be delivered in 2012. Two different devices are foreseen for this objective, one being optimized for the inner layers and their fast read-out requirement, while the other exploits the dimmed background in the outer layers to reduce the power consumption. The sensor evolution relies on a high resistivity epitaxial layer, on the use of an advanced CMOS process and on the combination of column-level ADCs with a pixel array. The paper will p...

  3. Broadband image sensor array based on graphene-CMOS integration

    Science.gov (United States)

    Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

    2017-06-01

    Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

  4. Photon imaging using post-processed CMOS chips

    NARCIS (Netherlands)

    Melai, J.

    2010-01-01

    This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic

  5. A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology

    Directory of Open Access Journals (Sweden)

    Preethi Padmanabhan

    2018-02-01

    Full Text Available Gallium nitride (GaN and its alloys are becoming preferred materials for ultraviolet (UV detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs, implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e−, obtaining avalanche gains up to 103. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology.

  6. A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology.

    Science.gov (United States)

    Padmanabhan, Preethi; Hancock, Bruce; Nikzad, Shouleh; Bell, L Douglas; Kroep, Kees; Charbon, Edoardo

    2018-02-03

    Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e - , obtaining avalanche gains up to 10³. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology.

  7. CMOS-TDI detector technology for reconnaissance application

    Science.gov (United States)

    Eckardt, Andreas; Reulke, Ralf; Jung, Melanie; Sengebusch, Karsten

    2014-10-01

    The Institute of Optical Sensor Systems (OS) at the Robotics and Mechatronics Center of the German Aerospace Center (DLR) has more than 30 years of experience with high-resolution imaging technology. This paper shows the institute's scientific results of the leading-edge detector design CMOS in a TDI (Time Delay and Integration) architecture. This project includes the technological design of future high or multi-spectral resolution spaceborne instruments and the possibility of higher integration. DLR OS and the Fraunhofer Institute for Microelectronic Circuits and Systems (IMS) in Duisburg were driving the technology of new detectors and the FPA design for future projects, new manufacturing accuracy and on-chip processing capability in order to keep pace with the ambitious scientific and user requirements. In combination with the engineering research, the current generation of space borne sensor systems is focusing on VIS/NIR high spectral resolution to meet the requirements on earth and planetary observation systems. The combination of large-swath and high-spectral resolution with intelligent synchronization control, fast-readout ADC (analog digital converter) chains and new focal-plane concepts opens the door to new remote-sensing and smart deep-space instruments. The paper gives an overview of the detector development status and verification program at DLR, as well as of new control possibilities for CMOS-TDI detectors in synchronization control mode.

  8. Radiation imaging detectors made by wafer post-processing of CMOS chips

    NARCIS (Netherlands)

    Blanco Carballo, V.M.

    2009-01-01

    In this thesis several wafer post-processing steps have been applied to CMOS chips. Amplification gas strucutures are built on top of the microchips. A complete radiation imaging detector is obtained this way. Integrated Micromegas-like and GEM-like structures were fabricated on top of Timepix CMOS

  9. SU-F-T-434: Development of a Fan-Beam Optical Scanner Using CMOS Array for Small Field Dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Brost, E; Warmington, L; Watanabe, Y [Department of Radiation Oncology, University of Minnesota, Minneapolis, MN (United States); Senthilkumar, S [Department of Physics, Vel Tech University, Chennai (India); Departamento de Ingeneria Fisica, DCI, Universidad de Guanajuato, Campus Leon, Guanajuato (Mexico)

    2016-06-15

    Purpose: To design and construct a second generation optical computed tomography (OCT) system using a fan-beam with a CMOS array detector for the 3D dosimetry with polymer gel and radiochromic solid dosimeters. The system was specifically designed for the small field dosimetry. Methods: The optical scanner used a fan-beam laser, which was produced from a collimated red laser beam (λ=620 nm) with a 15-degree laser-line generating lens. The fan-beam was sent through an index-matching bath which holds the sample stage and a sample. The emerging laser light was detected with a 2.54 cm-long CMOS array detector (512 elements). The sample stage rotated through the full 360 degree projection angles at 0.9-degree increments. Each projection was normalized to the unirradiated sample at the projection angle to correct for imperfections in the dosimeter. A larger sample could be scanned by using a motorized mirror and linearly translating the CMOS detector. The height of the sample stage was varied for a full 3D scanning. The image acquisition and motor motion was controlled by a computer. The 3D image reconstruction was accomplished by a fan-beam reconstruction algorithm. All the software was developed inhouse with MATLAB. Results: The scanner was used on both PRESAGE and PAGAT gel dosimeters. Irreconcilable refraction errors were seen with PAGAT because the fan beam laser line refracted away from the detector when the field was highly varying in 3D. With PRESAGE, this type of error was not seen. Conclusion: We could acquire tomographic images of dose distributions by the new OCT system with both polymer gel and radiochromic solid dosimeters. Preliminary results showed that the system was more suited for radiochromic solid dosimeters since the radiochromic dosimeters exhibited minimal refraction and scattering errors. We are currently working on improving the image quality by thorough characterization of the OCT system.

  10. SU-F-T-434: Development of a Fan-Beam Optical Scanner Using CMOS Array for Small Field Dosimetry

    International Nuclear Information System (INIS)

    Brost, E; Warmington, L; Watanabe, Y; Senthilkumar, S

    2016-01-01

    Purpose: To design and construct a second generation optical computed tomography (OCT) system using a fan-beam with a CMOS array detector for the 3D dosimetry with polymer gel and radiochromic solid dosimeters. The system was specifically designed for the small field dosimetry. Methods: The optical scanner used a fan-beam laser, which was produced from a collimated red laser beam (λ=620 nm) with a 15-degree laser-line generating lens. The fan-beam was sent through an index-matching bath which holds the sample stage and a sample. The emerging laser light was detected with a 2.54 cm-long CMOS array detector (512 elements). The sample stage rotated through the full 360 degree projection angles at 0.9-degree increments. Each projection was normalized to the unirradiated sample at the projection angle to correct for imperfections in the dosimeter. A larger sample could be scanned by using a motorized mirror and linearly translating the CMOS detector. The height of the sample stage was varied for a full 3D scanning. The image acquisition and motor motion was controlled by a computer. The 3D image reconstruction was accomplished by a fan-beam reconstruction algorithm. All the software was developed inhouse with MATLAB. Results: The scanner was used on both PRESAGE and PAGAT gel dosimeters. Irreconcilable refraction errors were seen with PAGAT because the fan beam laser line refracted away from the detector when the field was highly varying in 3D. With PRESAGE, this type of error was not seen. Conclusion: We could acquire tomographic images of dose distributions by the new OCT system with both polymer gel and radiochromic solid dosimeters. Preliminary results showed that the system was more suited for radiochromic solid dosimeters since the radiochromic dosimeters exhibited minimal refraction and scattering errors. We are currently working on improving the image quality by thorough characterization of the OCT system.

  11. Macromolecular crystallography with a large format CMOS detector

    Energy Technology Data Exchange (ETDEWEB)

    Nix, Jay C., E-mail: jcnix@lbl.gov [Molecular Biology Consortium 12003 S. Pulaski Rd. #166 Alsip, IL 60803 U.S.A (United States)

    2016-07-27

    Recent advances in CMOS technology have allowed the production of large surface area detectors suitable for macromolecular crystallography experiments [1]. The Molecular Biology Consortium (MBC) Beamline 4.2.2 at the Advanced Light Source in Berkeley, CA, has installed a 2952 x 2820 mm RDI CMOS-8M detector with funds from NIH grant S10OD012073. The detector has a 20nsec dead pixel time and performs well with shutterless data collection strategies. The sensor obtains sharp point response and minimal optical distortion by use of a thin fiber-optic plate between the phosphor and sensor module. Shutterless data collections produce high-quality redundant datasets that can be obtained in minutes. The fine-sliced data are suitable for processing in standard crystallographic software packages (XDS, HKL2000, D*TREK, MOSFLM). Faster collection times relative to the previous CCD detector have resulted in a record number of datasets collected in a calendar year and de novo phasing experiments have resulted in publications in both Science and Nature [2,3]. The faster collections are due to a combination of the decreased overhead requirements of shutterless collections combined with exposure times that have decreased by over a factor of 2 for images with comparable signal to noise of the NOIR-1 detector. The overall increased productivity has allowed the development of new beamline capabilities and data collection strategies.

  12. 32 x 16 CMOS smart pixel array for optical interconnects

    Science.gov (United States)

    Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

    2000-05-01

    Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

  13. Study of prototypes of LFoundry active CMOS pixels sensors for the ATLAS detector

    Science.gov (United States)

    Vigani, L.; Bortoletto, D.; Ambroz, L.; Plackett, R.; Hemperek, T.; Rymaszewski, P.; Wang, T.; Krueger, H.; Hirono, T.; Caicedo Sierra, I.; Wermes, N.; Barbero, M.; Bhat, S.; Breugnon, P.; Chen, Z.; Godiot, S.; Pangaud, P.; Rozanov, A.

    2018-02-01

    Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.

  14. Study of prototypes of LFoundry active CMOS pixels sensors for the ATLAS detector

    CERN Document Server

    Vigani, L.; Ambroz, L.; Plackett, R.; Hemperek, T.; Rymaszewski, P.; Wang, T.; Krueger, H.; Hirono, T.; Caicedo Sierra, I.; Wermes, N.; Barbero, M.; Bhat, S.; Breugnon, P.; Chen, Z.; Godiot, S.; Pangaud, P.; Rozanov, A.

    2018-01-01

    Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.

  15. From vertex detectors to inner trackers with CMOS pixel sensors

    CERN Document Server

    Besson, A.

    2017-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.

  16. TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

    CERN Document Server

    Buckland, Matthew Daniel

    2016-01-01

    The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.

  17. A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology †

    Science.gov (United States)

    Hancock, Bruce; Nikzad, Shouleh; Bell, L. Douglas; Kroep, Kees; Charbon, Edoardo

    2018-01-01

    Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e−, obtaining avalanche gains up to 103. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology. PMID:29401655

  18. A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications.

    Science.gov (United States)

    Kim, Kuk-Hwan; Gaba, Siddharth; Wheeler, Dana; Cruz-Albrecht, Jose M; Hussain, Tahir; Srinivasa, Narayan; Lu, Wei

    2012-01-11

    Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme. © 2011 American Chemical Society

  19. Improved Space Object Orbit Determination Using CMOS Detectors

    Science.gov (United States)

    Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

    2014-09-01

    CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario

  20. Frontend Receiver Electronics for High Frequency Monolithic CMUT-on-CMOS Imaging Arrays

    Science.gov (United States)

    Gurun, Gokce; Hasler, Paul; Degertekin, F. Levent

    2012-01-01

    This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for high-frequency intravascular ultrasound imaging. A custom 8-inch wafer is fabricated in a 0.35 μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulse-echo measurement. Transducer noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 MHz to 20 MHz. PMID:21859585

  1. A 32 x 32 capacitive micromachined ultrasonic transducer array manufactured in standard CMOS.

    Science.gov (United States)

    Lemmerhirt, David F; Cheng, Xiaoyang; White, Robert; Rich, Collin A; Zhang, Man; Fowlkes, J Brian; Kripfgans, Oliver D

    2012-07-01

    As ultrasound imagers become increasingly portable and lower cost, breakthroughs in transducer technology will be needed to provide high-resolution, real-time 3-D imaging while maintaining the affordability needed for portable systems. This paper presents a 32 x 32 ultrasound array prototype, manufactured using a CMUT-in-CMOS approach whereby ultrasonic transducer elements and readout circuits are integrated on a single chip using a standard integrated circuit manufacturing process in a commercial CMOS foundry. Only blanket wet-etch and sealing steps are added to complete the MEMS devices after the CMOS process. This process typically yields better than 99% working elements per array, with less than ±1.5 dB variation in receive sensitivity among the 1024 individually addressable elements. The CMUT pulseecho frequency response is typically centered at 2.1 MHz with a -6 dB fractional bandwidth of 60%, and elements are arranged on a 250 μm hexagonal grid (less than half-wavelength pitch). Multiplexers and CMOS buffers within the array are used to make on-chip routing manageable, reduce the number of physical output leads, and drive the transducer cable. The array has been interfaced to a commercial imager as well as a set of custom transmit and receive electronics, and volumetric images of nylon fishing line targets have been produced.

  2. Experimental observation of the improvement in MTF from backthinning a CMOS direct electron detector

    International Nuclear Information System (INIS)

    McMullan, G.; Faruqi, A.R.; Henderson, R.; Guerrini, N.; Turchetta, R.; Jacobs, A.; Hoften, G. van

    2009-01-01

    The advantages of backthinning monolithic active pixel sensors (MAPS) based on complementary metal oxide semiconductor (CMOS) direct electron detectors for electron microscopy have been discussed previously; they include better spatial resolution (modulation transfer function or MTF) and efficiency at all spatial frequencies (detective quantum efficiency or DQE). It was suggested that a 'thin' CMOS detector would have the most outstanding properties because of a reduction in the proportion of backscattered electrons. In this paper we show, theoretically (using Monte Carlo simulations of electron trajectories) and experimentally that this is indeed the case. The modulation transfer functions of prototype backthinned CMOS direct electron detectors have been measured at 300 keV. At zero spatial frequency, in non-backthinned 700-μm-thick detectors, the backscattered component makes up over 40% of the total signal but, by backthinning to 100, 50 or 35 μm, this can be reduced to 25%, 15% and 10%, respectively. For the 35 μm backthinned detector, this reduction in backscatter increases the MTF by 40% for spatial frequencies between 0.1 and 1.0 Nyquist. As discussed in the main text, reducing backscattering in backthinned detectors should also improve DQE.

  3. CMOS Pixel Sensors for High Precision Beam Telescopes and Vertex Detectors

    International Nuclear Information System (INIS)

    Masi, R. de; Baudot, J.; Fontaine, J.-Ch.

    2009-01-01

    CMOS sensors of the MIMOSA (standing for Minimum Ionising particle MOS Active pixel sensor) series are developed at IPHC since a decade and have ended up with full scale devices used in beam telescopes and in demonstrators of future vertex detectors. The sensors deliver analogue, unfiltered, signals and are therefore limited to read-out frequencies of ∼ 1 kframe/s. Since a few years, a fast architecture is being developed in collaboration with IRFU, which aims to speed up the read-out by 1-2 orders of magnitude. The first full scale sensor based on this architecture was fabricated recently and is being tested. Made of 660,000 pixels (18 μm pitch) covering an active area of ∼ 2 cm 2 , it delivers zero-suppressed binary signals, which allow running at ∼ 10 kframes/s. It will equip the beam telescope of the E.U. project EUDET and serve as a forerunner of the sensor equipping the 2 layers of the PIXEL detector of the STAR experiment at RHIC. The contribution to the conference will overview the main features and test results of this pioneering sensor. It will next describe its evolution towards read-out frequencies approaching 100 kframes/s, as required for the vertex detectors of the CBM experiment at FAIR and at the ILC. Finally, the issue of radiation tolerance will be addressed, in the context of a newly available CMOS process using a depleted substrate. A prototype sensor was fabricated in a such CMOS process. The talk will summarise beam test results showing, for the first time, that fluences of 10 14 n eq /cm 2 may be tolerable for CMOS sensors. Overall, the talk provides an overview of the status and plans of CMOS pixel sensors at the frontier of their achievements and outreach. (author)

  4. Direct photon-counting scintillation detector readout using an SSPM

    International Nuclear Information System (INIS)

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Gamma-ray detector technologies, capable of providing adequate energy information, use photomultiplier tubes (PMTs) or silicon avalanche photodiodes to detect the light pulse from a scintillation crystal. A new approach to detect the light from scintillation materials is to use an array of small photon counting detectors, or a 'detector-on-a-chip' based on a novel 'Solid-state Photomultiplier' (SSPM) concept. A CMOS SSPM coupled to a scintillation crystal uses an array of CMOS Geiger photodiode (GPD) pixels to collect light and produce a signal proportional to the energy of the radiation. Each pixel acts as a binary photon detector, but the summed output is an analog representation of the total photon intensity. We have successfully fabricated arrays of GPD pixels in a CMOS environment, which makes possible the production of miniaturized arrays integrated with the detector electronics in a small silicon chip. This detector technology allows for a substantial cost reduction while preserving the energy resolution needed for radiological measurements. In this work, we compare designs for the SSPM detector. One pixel design achieves maximum detection efficiency (DE) for 632-nm photons approaching 30% with a room temperature dark count rate (DCR) of less than 1 kHz for a 30-μm-diameter pixel. We characterize after pulsing and optical cross talk and discuss their effects on the performance of the SSPM. For 30-μm diameter, passively quenched CMOS GPD pixels, modeling suggests that a pixel spacing of approximately 90 μm optimizes the SSPM performance with respect to DE and cross talk

  5. Smart CMOS image sensor for lightning detection and imaging.

    Science.gov (United States)

    Rolando, Sébastien; Goiffon, Vincent; Magnan, Pierre; Corbière, Franck; Molina, Romain; Tulet, Michel; Bréart-de-Boisanger, Michel; Saint-Pé, Olivier; Guiry, Saïprasad; Larnaudie, Franck; Leone, Bruno; Perez-Cuevas, Leticia; Zayer, Igor

    2013-03-01

    We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor. This evaluation is performed in the frame of the predevelopment phase of the lightning detector that will be implemented in the Meteosat Third Generation Imager satellite for the European Space Agency. The lightning detection process is performed by a smart detector combining an in-pixel frame-to-frame difference comparison with an adjustable threshold and on-chip digital processing allowing an efficient localization of a faint lightning pulse on the entire large format array at a frequency of 1 kHz. A CMOS prototype sensor with a 256×256 pixel array and a 60 μm pixel pitch has been fabricated using a 0.35 μm 2P 5M technology and tested to validate the selected detection approach.

  6. Design of Pixellated CMOS Photon Detector for Secondary Electron Detection in the Scanning Electron Microscope

    Directory of Open Access Journals (Sweden)

    Joon Huang Chuah

    2011-01-01

    Full Text Available This paper presents a novel method of detecting secondary electrons generated in the scanning electron microscope (SEM. The method suggests that the photomultiplier tube (PMT, traditionally used in the Everhart-Thornley (ET detector, is to be replaced with a configurable multipixel solid-state photon detector offering the advantages of smaller dimension, lower supply voltage and power requirements, and potentially cheaper product cost. The design of the proposed detector has been implemented using a standard 0.35 μm CMOS technology with optical enhancement. This microchip comprises main circuit constituents of an array of photodiodes connecting to respective noise-optimised transimpedance amplifiers (TIAs, a selector-combiner (SC circuit, and a postamplifier (PA. The design possesses the capability of detecting photons with low input optical power in the range of 1 nW with 100 μm × 100 μm sized photodiodes and achieves a total amplification of 180 dBΩ at the output.

  7. Analysis of 3D stacked fully functional CMOS Active Pixel Sensor detectors

    International Nuclear Information System (INIS)

    Passeri, D; Servoli, L; Meroli, S

    2009-01-01

    The IC technology trend is to move from 3D flexible configurations (package on package, stacked dies) to real 3D ICs. This is mainly due to i) the increased electrical performances and ii) the cost of 3D integration which may be cheaper than to keep shrinking 2D circuits. Perspective advantages for particle tracking and vertex detectors applications in High Energy Physics can be envisaged: in this work, we will focus on the capabilities of the state-of-the-art vertical scale integration technologies, allowing for the fabrication of very compact, fully functional, multiple layers CMOS Active Pixel Sensor (APS) detectors. The main idea is to exploit the features of the 3D technologies for the fabrication of a ''stack'' of very thin and precisely aligned CMOS APS layers, leading to a single, integrated, multi-layers pixel sensor. The adoption of multiple-layers single detectors can dramatically reduce the mass of conventional, separated detectors (thus reducing multiple scattering issues), at the same time allowing for very precise measurements of particle trajectory and momentum. As a proof of concept, an extensive device and circuit simulation activity has been carried out, aiming at evaluate the suitability of such a kind of CMOS active pixel layers for particle tracking purposes.

  8. Front-end receiver electronics for high-frequency monolithic CMUT-on-CMOS imaging arrays.

    Science.gov (United States)

    Gurun, Gokce; Hasler, Paul; Degertekin, F

    2011-08-01

    This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for highfrequency intravascular ultrasound imaging. A custom 8-inch (20-cm) wafer is fabricated in a 0.35-μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range, and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input-referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulseecho measurement. Transducer-noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 to 20 MHz.

  9. Optical readout of a triple-GEM detector by means of a CMOS sensor

    Energy Technology Data Exchange (ETDEWEB)

    Marafini, M. [INFN Sezione di Roma (Italy); Museo Storico della Fisica e Centro Studi e Ricerche “E. Fermi”, Roma (Italy); Patera, V. [INFN Sezione di Roma (Italy); Museo Storico della Fisica e Centro Studi e Ricerche “E. Fermi”, Roma (Italy); Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy); Pinci, D., E-mail: davide.pinci@roma1.infn.it [INFN Sezione di Roma (Italy); Sarti, A. [Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy); Dipartimento di Scienze di Base e Applicate per Ingegneria, Sapienza Università di Roma (Italy); Sciubba, A. [INFN Sezione di Roma (Italy); Museo Storico della Fisica e Centro Studi e Ricerche “E. Fermi”, Roma (Italy); Dipartimento di Scienze di Base e Applicate per Ingegneria, Sapienza Università di Roma (Italy); Spiriti, E. [Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy)

    2016-07-11

    In last years, the development of optical sensors has produced objects able to provide very interesting performance. Large granularity is offered along with a very high sensitivity. CMOS sensors with millions of pixels able to detect as few as two or three photons per pixel are commercially available and can be used to read-out the optical signals provided by tracking particle detectors. In this work the results obtained by optically reading-out a triple-GEM detector by a commercial CMOS sensor will be presented. A standard detector was assembled with a transparent window below the third GEM allowing the light to get out. The detector is supplied with an Ar/CF{sub 4} based gas mixture producing 650 nm wavelength photons matching the maximum quantum efficiency of the sensor.

  10. Neutron irradiation test of depleted CMOS pixel detector prototypes

    International Nuclear Information System (INIS)

    Mandić, I.; Cindro, V.; Gorišek, A.; Hiti, B.; Kramberger, G.; Mikuž, M.; Zavrtanik, M.; Hemperek, T.; Daas, M.; Hügging, F.; Krüger, H.; Pohl, D.-L.; Wermes, N.; Gonella, L.

    2017-01-01

    Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kΩ cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1 · 10 13 n/cm 2 and 5 · 10 13 n/cm 2 and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1 · 10 15 n/cm 2 is more than 50 μm at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments.

  11. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    International Nuclear Information System (INIS)

    Esposito, M.; Waltham, C.; Allinson, N.M.; Anaxagoras, T.; Evans, P.M.; Poludniowski, G.; Green, S.; Parker, D.J.; Price, T.; Manolopoulos, S.; Nieto-Camero, J.

    2015-01-01

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs

  12. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography.

    Science.gov (United States)

    Esposito, M; Anaxagoras, T; Evans, P M; Green, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Poludniowski, G; Price, T; Waltham, C; Allinson, N M

    2015-06-03

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

  13. Advances in CMOS solid-state photomultipliers for scintillation detector applications

    Energy Technology Data Exchange (ETDEWEB)

    Christian, James F.; Stapels, Christopher J.; Johnson, Erik B.; McClish, Mickel; Dokhale, Purushotthom; Shah, Kanai S.; Mukhopadhyay, Sharmistha; Chapman, Eric [Radiation Monitoring Devices, 44 Hunt Street, Watertownm, MA 02472 (United States); Augustine, Frank L., E-mail: JChristian@RMDInc.co [Augustine Engineering, 2115 Park Dale Ln, Encinitas, CA 92024 (United States)

    2010-12-11

    Solid-state photomultipliers (SSPMs) are a compact, lightweight, potentially low-cost alternative to a photomultiplier tube for a variety of scintillation detector applications, including digital-dosimeter and medical-imaging applications. Manufacturing SSPMs with a commercial CMOS process provides the ability for rapid prototyping, and facilitates production to reduce the cost. RMD designs CMOS SSPM devices that are fabricated by commercial foundries. This work describes the characterization and performance of these devices for scintillation detector applications. This work also describes the terms contributing to device noise in terms of the excess noise of the SSPM, the binomial statistics governing the number of pixels triggered by a scintillation event, and the background, or thermal, count rate. The fluctuations associated with these terms limit the resolution of the signal pulse amplitude. We explore the use of pixel-level signal conditioning, and characterize the performance of a prototype SSPM device that preserves the digital nature of the signal. In addition, we explore designs of position-sensitive SSPM detectors for medical imaging applications, and characterize their performance.

  14. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    International Nuclear Information System (INIS)

    Miucci, A; Gonzalez-Sevilla, S; Ferrere, D; Iacobucci, G; Rosa, A La; Muenstermann, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Obermann, T; Wermes, N; Garcia-Sciveres, M; Backhaus, M; Capeans, M; Feigl, S; Nessi, M; Pernegger, H; Ristic, B; George, M

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

  15. Limits in point to point resolution of MOS based pixels detector arrays

    Science.gov (United States)

    Fourches, N.; Desforge, D.; Kebbiri, M.; Kumar, V.; Serruys, Y.; Gutierrez, G.; Leprêtre, F.; Jomard, F.

    2018-01-01

    In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.

  16. Titanium dioxide nanowire sensor array integration on CMOS platform using deterministic assembly.

    Science.gov (United States)

    Gall, Oren Z; Zhong, Xiahua; Schulman, Daniel S; Kang, Myungkoo; Razavieh, Ali; Mayer, Theresa S

    2017-06-30

    Nanosensor arrays have recently received significant attention due to their utility in a wide range of applications, including gas sensing, fuel cells, internet of things, and portable health monitoring systems. Less attention has been given to the production of sensor platforms in the μW range for ultra-low power applications. Here, we discuss how to scale the nanosensor energy demand by developing a process for integration of nanowire sensing arrays on a monolithic CMOS chip. This work demonstrates an off-chip nanowire fabrication method; subsequently nanowires link to a fused SiO 2 substrate using electric-field assisted directed assembly. The nanowire resistances shown in this work have the highest resistance uniformity reported to date of 18%, which enables a practical roadmap towards the coupling of nanosensors to CMOS circuits and signal processing systems. The article also presents the utility of optimizing annealing conditions of the off-chip metal-oxides prior to CMOS integration to avoid limitations of thermal budget and process incompatibility. In the context of the platform demonstrated here, directed assembly is a powerful tool that can realize highly uniform, cross-reactive arrays of different types of metal-oxide nanosensors suited for gas discrimination and signal processing systems.

  17. A digital output accelerometer using MEMS-based piezoelectric accelerometers and arrayed CMOS inverters with satellite capacitors

    International Nuclear Information System (INIS)

    Kobayashi, T; Okada, H; Maeda, R; Itoh, T; Masuda, T

    2011-01-01

    The present paper describes the development of a digital output accelerometer composed of microelectromechanical systems (MEMS)-based piezoelectric accelerometers and arrayed complementary metal–oxide–semiconductor (CMOS) inverters accompanied by capacitors. The piezoelectric accelerometers were fabricated from multilayers of Pt/Ti/PZT/Pt/Ti/SiO 2 deposited on silicon-on-insulator (SOI) wafers. The fabricated piezoelectric accelerometers were connected to arrayed CMOS inverters. Each of the CMOS inverters was accompanied by a capacitor with a different capacitance called a 'satellite capacitor'. We have confirmed that the output voltage generated from the piezoelectric accelerometers can vary the output of the CMOS inverters from a high to a low level; the state of the CMOS inverters has turned from the 'off-state' into the 'on-state' when the output voltage of the piezoelectric accelerometers is larger than the threshold voltage of the CMOS inverters. We have also confirmed that the CMOS inverters accompanied by the larger satellite capacitor have become 'on-state' at a lower acceleration. On increasing the acceleration, the number of on-state CMOS inverters has increased. Assuming that the on-state and off-state of CMOS inverters correspond to logic '0' and '1', the present digital output accelerometers have expressed the accelerations of 2.0, 3.0, 5.0, and 5.5 m s −2 as digital outputs of 111, 110, 100, and 000, respectively

  18. 3D monolithically stacked CMOS active pixel sensor detectors for particle tracking applications

    International Nuclear Information System (INIS)

    Passeri, D; Placidi, P; Servoli, L; Meroli, S; Magalotti, D; Marras, A

    2012-01-01

    In this work we propose an innovative approach to particle tracking based on CMOS Active Pixel Sensors layers, monolithically integrated in an all-in-one chip featuring multiple, stacked, fully functional detector layers capable to provide momentum measurement (particle impact point and direction) within a single detector. This will results in a very low material detector, thus dramatically reducing multiple scattering issues. To this purpose, we rely on the capabilities of the CMOS vertical scale integration (3D IC) technology. A first chip prototype has been fabricated within a multi-project run using a 130 nm CMOS Chartered/Tezzaron technology, featuring two layers bonded face-to-face. Tests have been carried out on full 3D structures, providing the functionalities of both tiers. To this purpose, laser scans have been carried out using highly focussed spot size obtaining coincidence responses of the two layers. Tests have been made as well with X-ray sources in order to calibrate the response of the sensor. Encouraging results have been found, fostering the suitability of both the adopted 3D-IC vertical scale fabrication technology and the proposed approach for particle tracking applications.

  19. MT3250BA: a 320×256-50µm snapshot microbolometer ROIC for high-resistance detector arrays

    Science.gov (United States)

    Eminoglu, Selim; Akin, Tayfun

    2013-06-01

    This paper reports the development of a new microbolometer readout integrated circuit (MT3250BA) designed for high-resistance detector arrays. MT3250BA is the first microbolometer readout integrated circuit (ROIC) product from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic CMOS imaging sensors and ROICs for hybrid photonic imaging sensors and microbolometers. MT3250BA has a format of 320 × 256 and a pixel pitch of 50 µm, developed with a system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT3250BA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. MT3250BA has 2 analog video outputs and 1 analog reference output for pseudo-differential operation, and the ROIC can be programmed to operate in the 1 or 2-output modes. A unique feature of MT3250BA is that it performs snapshot readout operation; therefore, the image quality will only be limited by the thermal time constant of the detector pixels, but not by the scanning speed of the ROIC, as commonly found in the conventional microbolometer ROICs performing line-by-line (rolling-line) readout operation. The signal integration is performed at the pixel level in parallel for the whole array, and signal integration time can be programmed from 0.1 µs up to 100 ms in steps of 0.1 µs. The ROIC is designed to work with high-resistance detector arrays with pixel resistance values higher than 250 kΩ. The detector bias voltage can be programmed on-chip over a 2 V range with a resolution of 1 mV. The ROIC has a measured input referred noise of 260 µV rms at 300 K. The ROIC can be used to build a microbolometer infrared sensor with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a high detector resistance value (≥ 250 K

  20. Resolution limits achievable with CMOS front-end in X- and γ-ray analysis with semiconductor detectors

    International Nuclear Information System (INIS)

    Manfredi, P.F.; Manghisoni, M.; Ratti, L.; Re, V.; Speziali, V.

    2003-01-01

    During the past 15 years, the CMOS technologies have provided the most widely followed approach to signal processing with microstrip detectors. In more recent times, CMOS front-end systems have been developed to acquire and process signals from pixel detectors. During the past few years, the favor toward CMOS processes in their applications in the broad area of detector signal processing has been enhanced by the technological advancement known as device scaling and by two aspects connected to it. One is the shrinking in channel length L into the deep submicron region. The second one is the related reduction in the gate-oxide thickness t ox to a few nm. The reduction in t ox has, as a consequence of primary importance, a decreased 1/f-noise contribution to the equivalent noise charge (ENC). The thinner gate-oxide and the shrinking in gate length, in some regions of operations, concur to increase the transconductance of the device, which results in a smaller ENC contribution from channel thermal noise. The goal of the present paper is to address the question of whether or not the most advanced CMOS processes may meet the requirements set by high resolution, high dynamic range applications like the energy-dispersive photon analysis with solid-state detectors of comparatively large capacitance

  1. Modeling and evaluation of a high-resolution CMOS detector for cone-beam CT of the extremities.

    Science.gov (United States)

    Cao, Qian; Sisniega, Alejandro; Brehler, Michael; Stayman, J Webster; Yorkston, John; Siewerdsen, Jeffrey H; Zbijewski, Wojciech

    2018-01-01

    Quantitative assessment of trabecular bone microarchitecture in extremity cone-beam CT (CBCT) would benefit from the high spatial resolution, low electronic noise, and fast scan time provided by complementary metal-oxide semiconductor (CMOS) x-ray detectors. We investigate the performance of CMOS sensors in extremity CBCT, in particular with respect to potential advantages of thin (CMOS x-ray detector incorporating the effects of CsI:Tl scintillator thickness was developed. Simulation studies were performed using nominal extremity CBCT acquisition protocols (90 kVp, 0.126 mAs/projection). A range of scintillator thickness (0.35-0.75 mm), pixel size (0.05-0.4 mm), focal spot size (0.05-0.7 mm), magnification (1.1-2.1), and dose (15-40 mGy) was considered. The detectability index was evaluated for both CMOS and a-Si:H flat-panel detector (FPD) configurations for a range of imaging tasks emphasizing spatial frequencies associated with feature size aobj. Experimental validation was performed on a CBCT test bench in the geometry of a compact orthopedic CBCT system (SAD = 43.1 cm, SDD = 56.0 cm, matching that of the Carestream OnSight 3D system). The test-bench studies involved a 0.3 mm focal spot x-ray source and two CMOS detectors (Dalsa Xineos-3030HR, 0.099 mm pixel pitch) - one with the standard CsI:Tl thickness of 0.7 mm (C700) and one with a custom 0.4 mm thick scintillator (C400). Measurements of modulation transfer function (MTF), detective quantum efficiency (DQE), and CBCT scans of a cadaveric knee (15 mGy) were obtained for each detector. Optimal detectability for high-frequency tasks (feature size of ~0.06 mm, consistent with the size of trabeculae) was ~4× for the C700 CMOS detector compared to the a-Si:H FPD at nominal system geometry of extremity CBCT. This is due to ~5× lower electronic noise of a CMOS sensor, which enables input quantum-limited imaging at smaller pixel size. Optimal pixel size for high-frequency tasks was CMOS

  2. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

    Science.gov (United States)

    Zhao, C; Konstantinidis, A C; Zheng, Y; Anaxagoras, T; Speller, R D; Kanicki, J

    2015-12-07

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm(-1) and a DQE of around 0.5 at spatial frequencies  CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

  3. Thin film encapsulated 1D thermoelectric detector in an IR microspectrometer

    NARCIS (Netherlands)

    Wu, H.; Emadi, A.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    A thermopile-based detector array for use in a miniaturized Infrared (IR) spectrometer has been designed and fabricated using CMOS compatible MEMS technology. The emphasis is on the optimal of the detector array at the system level, while considering the thermal design, the dimensional constraints

  4. The surface detector array of the Telescope Array experiment

    Energy Technology Data Exchange (ETDEWEB)

    Abu-Zayyad, T. [University of Utah, High Energy Astrophysics Institute, Salt Lake City, Utah (United States); Aida, R. [University of Yamanashi, Interdisciplinary Graduate School of Medicine and Engineering, Kofu, Yamanashi (Japan); Allen, M.; Anderson, R. [University of Utah, High Energy Astrophysics Institute, Salt Lake City, Utah (United States); Azuma, R. [Tokyo Institute of Technology, Meguro, Tokyo (Japan); Barcikowski, E.; Belz, J.W.; Bergman, D.R.; Blake, S.A.; Cady, R. [University of Utah, High Energy Astrophysics Institute, Salt Lake City, Utah (United States); Cheon, B.G. [Hanyang University, Seongdong-gu, Seoul (Korea, Republic of); Chiba, J. [Tokyo University of Science, Noda, Chiba (Japan); Chikawa, M. [Kinki University, Higashi Osaka, Osaka (Japan); Cho, E.J. [Hanyang University, Seongdong-gu, Seoul (Korea, Republic of); Cho, W.R. [Yonsei University, Seodaemun-gu, Seoul (Korea, Republic of); Fujii, H. [Institute of Particle and Nuclear Studies, KEK, Tsukuba, Ibaraki (Japan); Fujii, T. [Osaka City University, Osaka, Osaka (Japan); Fukuda, T. [Tokyo Institute of Technology, Meguro, Tokyo (Japan); Fukushima, M. [Institute for Cosmic Ray Research, University of Tokyo, Kashiwa, Chiba (Japan); University of Tokyo, Institute for the Physics and Mathematics of the Universe, Kashiwa, Chiba (Japan); Gorbunov, D. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow (Russian Federation); and others

    2012-10-11

    The Telescope Array (TA) experiment, located in the western desert of Utah, USA, is designed for the observation of extensive air showers from extremely high energy cosmic rays. The experiment has a surface detector array surrounded by three fluorescence detectors to enable simultaneous detection of shower particles at ground level and fluorescence photons along the shower track. The TA surface detectors and fluorescence detectors started full hybrid observation in March, 2008. In this article we describe the design and technical features of the TA surface detector.

  5. The surface detector array of the Telescope Array experiment

    International Nuclear Information System (INIS)

    Abu-Zayyad, T.; Aida, R.; Allen, M.; Anderson, R.; Azuma, R.; Barcikowski, E.; Belz, J.W.; Bergman, D.R.; Blake, S.A.; Cady, R.; Cheon, B.G.; Chiba, J.; Chikawa, M.; Cho, E.J.; Cho, W.R.; Fujii, H.; Fujii, T.; Fukuda, T.; Fukushima, M.; Gorbunov, D.

    2012-01-01

    The Telescope Array (TA) experiment, located in the western desert of Utah, USA, is designed for the observation of extensive air showers from extremely high energy cosmic rays. The experiment has a surface detector array surrounded by three fluorescence detectors to enable simultaneous detection of shower particles at ground level and fluorescence photons along the shower track. The TA surface detectors and fluorescence detectors started full hybrid observation in March, 2008. In this article we describe the design and technical features of the TA surface detector.

  6. A silicon pixel detector prototype for the CLIC vertex detector

    CERN Multimedia

    AUTHOR|(INSPIRE)INSPIRE-00714258

    2017-01-01

    A silicon pixel detector prototype for CLIC, currently under study for the innermost detector surrounding the collision point. The detector is made of a High-Voltage CMOS sensor (top) and a CLICpix2 readout chip (bottom) that are glued to each other. Both parts have a size of 3.3 x 4.0 $mm^2$ and consist of an array of 128 x 128 pixels of 25 x 25 $\\micro m^2$ size.

  7. X-ray detector array

    International Nuclear Information System (INIS)

    Houston, J.M.

    1980-01-01

    The object of the invention (an ionization chamber X-ray detector array for use with high speed computerised tomographic imaging apparatus) is to reduce the time required to produce a tomographic image. The detector array described determines the distribution of X-ray intensities in one or more flat, coplanar X-ray beams. It comprises three flat anode sheets parallel to the X-ray beam, a plurality of rod-like cathodes between the anodes, a detector gas between the electrodes and a means for applying a potential between the electrodes. Each of the X-ray sources is collimated to give a narrow, planar section of X-ray photons. Sets of X-ray sources in the array are pulsed simultaneously to obtain X-ray transmission data for tomographic image reconstruction. (U.K.)

  8. High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

    CERN Document Server

    Peric,I et al.

    2013-01-01

    High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 1015 neq=cm2 , nearly 100% detection efficiency and a spatial resolution of about 3 μm were demonstrated. Since 2011 the HV detectors have first applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process.

  9. A vertex detector for the International Linear Collider based on CMOS sensors

    Energy Technology Data Exchange (ETDEWEB)

    Besson, Auguste [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France)]. E-mail: abesson@in2p3.fr; Claus, Gilles [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Colledani, Claude [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Degerli, Yavuz [CEA Saclay, DAPNIA, Gif-sur-Yvette Cedex (France); Deptuch, Grzegorz [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Deveaux, Michael [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France) and GSI, Planckstrasse 1, Darmstadt 64291 (Germany); Dulinski, Wojciech [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Fourches, Nicolas [CEA Saclay, DAPNIA, Gif-sur-Yvette Cedex (France); Goffe, Mathieu [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Grandjean, Damien [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Guilloux, Fabrice [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Heini, Sebastien [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France)]|[GSI, Planckstrasse 1, Darmstadt 64291 (Germany); Himmi, Abdelkader; Hu, Christine; Jaaskelainen, Kimmo [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Li, Yan; Lutz, Pierre; Orsini, Fabienne [CEA Saclay, DAPNIA, Gif-sur-Yvette Cedex (France); Pellicioli, Michel; Scopelliti, Emanuele; Shabetai, Alexandre; Szelezniak, Michal; Valin, Isabelle [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Winter, Marc [Institut de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France)]. E-mail: marc.winter@ires.in2p3.f

    2006-11-30

    The physics programme at the International Linear Collider (ILC) calls for a vertex detector (VD) providing unprecedented flavour tagging performances, especially for c-quarks and {tau} leptons. This requirement makes a very granular, thin and multi-layer VD installed very close to the interaction region mandatory. Additional constraints, mainly on read-out speed and radiation tolerance, originate from the beam background, which governs the occupancy and the radiation level the detector should be able to cope with. CMOS sensors are being developed to fulfil these requirements. This report addresses the ILC requirements (highly related to beamstrahlung), the main advantages and features of CMOS sensors, the demonstrated performances and the specific aspects of a VD based on this technology. The status of the main R and D directions (radiation tolerance, thinning procedure and read-out speed) are also presented.

  10. Aging of imaging properties of a CMOS flat-panel detector for dental cone-beam computed tomography

    Science.gov (United States)

    Kim, D. W.; Han, J. C.; Yun, S.; Kim, H. K.

    2017-01-01

    We have experimentally investigated the long-term stability of imaging properties of a flat-panel detector in conditions used for dental x-ray imaging. The detector consists of a CsI:Tl layer and CMOS photodiode pixel arrays. Aging simulations were carried out using an 80-kVp x-ray beam at an air-kerma rate of approximately 5 mGy s-1 at the entrance surface of the detector with a total air kerma of up to 0.6 kGy. Dark and flood-field images were periodically obtained during irradiation, and the mean signal and noise levels were evaluated for each image. We also evaluated the modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). The aging simulation showed a decrease in both the signal and noise of the gain-offset-corrected images, but there was negligible change in the signal-to-noise performance as a function of the accumulated dose. The gain-offset correction for analyzing images resulted in negligible changes in MTF, NPS, and DQE results over the total dose. Continuous x-ray exposure to a detector can cause degradation in the physical performance factors such the detector sensitivity, but linear analysis of the gain-offset-corrected images can assure integrity of the imaging properties of a detector during its lifetime.

  11. Microwave Imaging Using CMOS Integrated Circuits with Rotating 4 × 4 Antenna Array on a Breast Phantom

    Directory of Open Access Journals (Sweden)

    Hang Song

    2017-01-01

    Full Text Available A digital breast cancer detection system using 65 nm technology complementary metal oxide semiconductor (CMOS integrated circuits with rotating 4 × 4 antenna array is presented. Gaussian monocycle pulses are generated by CMOS logic circuits and transmitted by a 4 × 4 matrix antenna array via two CMOS single-pole-eight-throw (SP8T switching matrices. Radar signals are received and converted to digital signals by CMOS equivalent time sampling circuits. By rotating the 4 × 4 antenna array, the reference signal is obtained by averaging the waveforms from various positions to extract the breast phantom target response. A signal alignment algorithm is proposed to compensate the phase shift of the signals caused by the system jitter. After extracting the scattered signal from the target, a bandpass filter is applied to reduce the noise caused by imperfect subtraction between original and the reference signals. The confocal imaging algorithm for rotating antennas is utilized to reconstruct the breast image. A 1 cm3 bacon block as a cancer phantom target in a rubber substrate as a breast fat phantom can be detected with reduced artifacts.

  12. Detector array and method

    International Nuclear Information System (INIS)

    Timothy, J.G.; Bybee, R.L.

    1978-01-01

    A detector array and method are described in which sets of electrode elements are provided. Each set consists of a number of linear extending parallel electrodes. The sets of electrode elements are disposed at an angle (preferably orthogonal) with respect to one another so that the individual elements intersect and overlap individual elements of the other sets. Electrical insulation is provided between the overlapping elements. The detector array is exposed to a source of charged particles which in accordance with one embodiment comprise electrons derived from a microchannel array plate exposed to photons. Amplifier and discriminator means are provided for each individual electrode element. Detection means are provided to sense pulses on individual electrode elements in the sets, with coincidence of pulses on individual intersecting electrode elements being indicative of charged particle impact at the intersection of the elements. Electronic readout means provide an indication of coincident events and the location where the charged particle or particles impacted. Display means are provided for generating appropriate displays representative of the intensity and locaton of charged particles impacting on the detector array

  13. A CMOS self-powered front-end architecture for subcutaneous event-detector devices

    CERN Document Server

    Colomer-Farrarons, Jordi

    2011-01-01

    A CMOS Self-Powered Front-End Architecture for Subcutaneous Event-Detector Devices presents the conception and prototype realization of a Self-Powered architecture for subcutaneous detector devices. The architecture is designed to work as a true/false (event detector) or threshold level alarm of some substances, ions, etc. that are detected through a three-electrodes amperometric BioSensor approach. The device is conceived as a Low-Power subcutaneous implantable application powered by an inductive link, one emitter antenna at the external side of the skin and the receiver antenna under the ski

  14. A CMOS 128-APS linear array integrated with a LVOF for highsensitivity and high-resolution micro-spectrophotometry

    NARCIS (Netherlands)

    Liu, C.; Emadi, A.; Wu, H.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    A linear array of 128 Active Pixel Sensors has been developed in standard CMOS technology and a Linear Variable Optical Filter (LVOF) is added using CMOS-compatible post-process, resulting in a single chip highly-integrated highresolution microspectrometer. The optical requirements imposed by the

  15. The hyperion particle-γ detector array

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, R.O.; Burke, J.T.; Casperson, R.J.; Ota, S. [Nuclear and Chemical Sciences Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Fisher, S.; Parker, J. [Science, Technology and Engineering Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Beausang, C.W. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Dag, M. [Cyclotron Institute, Texas A& M University, College Station, TX 77840 (United States); Humby, P. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Department of Physics, University of Surrey, Surrey GU27XH (United Kingdom); Koglin, J. [Nuclear and Chemical Sciences Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); McCleskey, E.; McIntosh, A.B.; Saastamoinen, A. [Cyclotron Institute, Texas A& M University, College Station, TX 77840 (United States); Tamashiro, A.S. [Department of Nuclear Science and Engineering, Oregon State University, Corvallis, OR 97331 (United States); Wilson, E. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Wu, T.C. [Department of Physics and Astronomy, University of Utah, Salt Lake City UT 84112-0830 (United States)

    2017-06-01

    Hyperion is a new high-efficiency charged-particle γ-ray detector array which consists of a segmented silicon telescope for charged-particle detection and up to fourteen high-purity germanium clover detectors for the detection of coincident γ rays. The array will be used in nuclear physics measurements and Stockpile Stewardship studies and replaces the STARLiTeR array. This article discusses the features of the array and presents data collected with the array in the commissioning experiment.

  16. High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

    CERN Document Server

    Peric, Ivan; Backhaus, Malte; Barbero, Marlon; Benoit, Mathieu; Berger, Niklaus; Bompard, Frederic; Breugnon, Patrick; Clemens, Jean-Claude; Dannheim, Dominik; Dierlamm, Alexander; Feigl, Simon; Fischer, Peter; Fougeron, Denis; Garcia-Sciveres, Maurice; Heim, Timon; Hügging, Fabian; Kiehn, Moritz; Kreidl, Christian; Krüger, Hans; La Rosa, Alessandro; Liu, Jian; Lütticke, Florian; Mariñas, Carlos; Meng, Lingxin; Miucci, Antonio; Münstermann, Daniel; Nguyen, Hong Hanh; Obermann, Theresa; Pangaud, Patrick; Perrevoort, Ann-Kathrin; Rozanov, Alexandre; Schöning, André; Schwenker, Benjamin; Wiedner, Dirk

    2013-01-01

    High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq = cm 2 , nearly 100% detection ef fi ciency and a spatial resolution of about 3 μ m were demonstrated. Since 2011 the HV detectors have fi rst applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process

  17. Characterization and radiation studies of diode test structures in LFoundry CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

    2016-07-01

    In order to prepare for the High Luminosity upgrade of the LHC, all subdetector systems of the ATLAS experiment will be upgraded. In preparation for this process, different possibilities for new radiation-hard and cost-efficient silicon sensor technologies to be used as part of hybrid pixel detectors in the ATLAS inner tracker are being investigated. One promising way to optimize the cost-efficiency of silicon-based pixel detectors is to use commercially available CMOS technologies such as the 150 nm process by LFoundry. In this talk, several CMOS pixel test structures, such as simple diodes and small pixel arrays, that were manufactured in this technology are characterized regarding general performance and radiation hardness and compared to each other as well as to the current ATLAS pixel detector.

  18. Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

    Science.gov (United States)

    Kremastiotis, I.

    2017-12-01

    The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128×128 square pixels with 25μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (~20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ~20 ns for a power consumption of 5μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (~20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using future assemblies with the readout chip.

  19. Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

    CERN Document Server

    AUTHOR|(SzGeCERN)756402

    2017-01-01

    The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128 × 128 square pixels with 25 μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (∼ 20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ∼ 20 ns for a power consumption of 5 μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (∼ 20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using...

  20. Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

    Science.gov (United States)

    Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2014-07-01

    We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

  1. Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

    Science.gov (United States)

    Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

    2003-06-01

    We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

  2. Modeling Charge Collection in Detector Arrays

    Science.gov (United States)

    Hardage, Donna (Technical Monitor); Pickel, J. C.

    2003-01-01

    A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

  3. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    International Nuclear Information System (INIS)

    Zhao, C; Kanicki, J; Konstantinidis, A C; Zheng, Y; Speller, R D; Anaxagoras, T

    2015-01-01

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm −1 and a DQE of around 0.5 at spatial frequencies  <1 mm −1 . In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNR i ) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (∼1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered. (paper)

  4. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    CERN Document Server

    Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

  5. Evaluation of 320x240 pixel LEC GaAs Schottky barrier X-ray imaging arrays, hybridized to CMOS readout circuit based on charge integration

    CERN Document Server

    Irsigler, R; Alverbro, J; Borglind, J; Froejdh, C; Helander, P; Manolopoulos, S; O'Shea, V; Smith, K

    1999-01-01

    320x240 pixels GaAs Schottky barrier detector arrays were fabricated, hybridized to silicon readout circuits, and subsequently evaluated. The detector chip was based on semi-insulating LEC GaAs material. The square shaped pixel detector elements were of the Schottky barrier type and had a pitch of 38 mu m. The GaAs wafers were thinned down prior to the fabrication of the ohmic back contact. After dicing, the chips were indium bump, flip-chip bonded to CMOS readout circuits based on charge integration, and finally evaluated. A bias voltage between 50 and 100 V was sufficient to operate the detector. Results on I-V characteristics, noise behaviour and response to X-ray radiation are presented. Images of various objects and slit patterns were acquired by using a standard dental imaging X-ray source. The work done was a part of the XIMAGE project financed by the European Community (Brite-Euram). (author)

  6. Analysis of the direct x-ray absorption noise in phosphor-coupled CMOS detectors

    International Nuclear Information System (INIS)

    Han, Jong Chul; Yun, Seung Man; Kim, Ho Kyung; Cunningham, Ian; Achterkirchen, Thorsten

    2009-01-01

    It is known that the indirect conversion detectors have an NPS (noise power spectrum), which decreases with the spatial frequency, and the direct conversion detector have a nearly constant NPS with the spatial frequency (or white NPS). This explains that when a significant amount of x rays are not absorbed in the phosphor layer, then the additional absorption of x-rays in the semiconductor layers (or the photodiodes) with their white noise contributions degrades the total NPS performance. From the fact, we investigated how the direct x-ray affects CMOS detectors in terms of NPS and DQE (detective quantum efficiency)

  7. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  8. X-ray Hybrid CMOS Detectors : Recent progress in development and characterization

    Science.gov (United States)

    Chattopadhyay, Tanmoy; Falcone, Abraham; Burrows, David N.

    2017-08-01

    PennState high energy astronomy laboratory has been working on the development and characterization of Hybrid CMOS Detectors (HCDs) for last few years in collaboration with Teledyne Imaging Sensors (TIS). HCDs are preferred over X-ray CCDs due to their higher and flexible read out rate, radiation hardness and low power which make them more suitable for next generation large area X-ray telescopic missions. An H2RG detector with 36 micron pixel pitch and 18 micron ROIC, has been selected for a sounding rocket flight in 2018. The H2RG detector provides ~2.5 % energy resolution at 5.9 keV and ~7 e- read noise when coupled to a cryo-SIDECAR. We could also detect a clear Oxygen line (~0.5 keV) from the detector implying a lower energy threshold of ~0.3 keV. Further improvement in the energy resolution and read noise is currently under progress. We have been working on the characterization of small pixel HCDs (12.5 micron pixel; smallest pixel HCDs developed so far) which is important for the development of next generation high resolution X-ray spectroscopic instrument based on HCDs. Event recognition in HCDs is another exciting prospect which have been successfully shown to work with a 64 X 64 pixel prototype SPEEDSTAR-EXD which use comparators at each pixel to read out only those pixels having detectable signal, thereby providing an order of magnitude improvement in the read out rate. Currently, we are working on the development of a large area SPEEDSTAR-EXD array for the development of a full fledged instrument. HCDs due to their fast read out, can also be explored as a large FOV instrument to study GRB afterglows and variability and spectroscopic study of other astrophysical transients. In this context, we are characterizing a Lobster-HCD system at multiple energies and multiple off-axis angles for future rocket or CubeSate experiments. In this presentation, I will briefly present these new developments and experiments with HCDs and the analysis techniques.

  9. Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements

    CERN Document Server

    Winter, Marc; Besson, Auguste; Claus, Gilles; Dorokhov, Andrei; Goffe, Mathieu; Hu-Guo, Christine; Morel, Frederic; Valin, Isabelle; Voutsinas, Georgios; Zhang, Liang

    2012-01-01

    CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.

  10. Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

    Science.gov (United States)

    Fossum, E. R.

    1995-01-01

    A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

  11. Solid-state photo-detectors for both CT and PET applications

    CERN Document Server

    Moraes, Danielle; Jarron, Pierre

    2007-01-01

    New semiconductor detectors have recently gained a lot of attention for medical applications in general. Advances in CdZnTe-detector arrays might improve both energy resolution and spatial resolution of clinical X-ray systems. Alternative system designs based on TFA technology combining photo-detector arrays with CMOS electronics open a possibility for compact imaging cameras. This scenario allows for the use of alternative materials such as a-Si:H and HgI2 that can be applied alone or integrated with scintillators. Results obtained with such materials are presented.

  12. Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

    Science.gov (United States)

    Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

    2018-04-01

    We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

  13. Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

    Science.gov (United States)

    Cha, B. K.; Kim, J. Y.; Kim, Y. J.; Yun, S.; Cho, G.; Kim, H. K.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2012-04-01

    In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

  14. High-voltage CMOS detectors

    International Nuclear Information System (INIS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-01-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  15. High-voltage CMOS detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

    2016-07-11

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  16. Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

    International Nuclear Information System (INIS)

    Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

    1996-01-01

    The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

  17. Commercialisation of CMOS Integrated Circuit Technology in Multi-Electrode Arrays for Neuroscience and Cell-Based Biosensors

    Directory of Open Access Journals (Sweden)

    Chris R. Bowen

    2011-05-01

    Full Text Available The adaptation of standard integrated circuit (IC technology as a transducer in cell-based biosensors in drug discovery pharmacology, neural interface systems and electrophysiology requires electrodes that are electrochemically stable, biocompatible and affordable. Unfortunately, the ubiquitous Complementary Metal Oxide Semiconductor (CMOS IC technology does not meet the first of these requirements. For devices intended only for research, modification of CMOS by post-processing using cleanroom facilities has been achieved. However, to enable adoption of CMOS as a basis for commercial biosensors, the economies of scale of CMOS fabrication must be maintained by using only low-cost post-processing techniques. This review highlights the methodologies employed in cell-based biosensor design where CMOS-based integrated circuits (ICs form an integral part of the transducer system. Particular emphasis will be placed on the application of multi-electrode arrays for in vitro neuroscience applications. Identifying suitable IC packaging methods presents further significant challenges when considering specific applications. The various challenges and difficulties are reviewed and some potential solutions are presented.

  18. Spatiotemporal norepinephrine mapping using a high-density CMOS microelectrode array.

    Science.gov (United States)

    Wydallis, John B; Feeny, Rachel M; Wilson, William; Kern, Tucker; Chen, Tom; Tobet, Stuart; Reynolds, Melissa M; Henry, Charles S

    2015-10-21

    A high-density amperometric electrode array containing 8192 individually addressable platinum working electrodes with an integrated potentiostat fabricated using Complementary Metal Oxide Semiconductor (CMOS) processes is reported. The array was designed to enable electrochemical imaging of chemical gradients with high spatiotemporal resolution. Electrodes are arranged over a 2 mm × 2 mm surface area into 64 subarrays consisting of 128 individual Pt working electrodes as well as Pt pseudo-reference and auxiliary electrodes. Amperometric measurements of norepinephrine in tissue culture media were used to demonstrate the ability of the array to measure concentration gradients in complex media. Poly(dimethylsiloxane) microfluidics were incorporated to control the chemical concentrations in time and space, and the electrochemical response at each electrode was monitored to generate electrochemical heat maps, demonstrating the array's imaging capabilities. A temporal resolution of 10 ms can be achieved by simultaneously monitoring a single subarray of 128 electrodes. The entire 2 mm × 2 mm area can be electrochemically imaged in 64 seconds by cycling through all subarrays at a rate of 1 Hz per subarray. Monitoring diffusional transport of norepinephrine is used to demonstrate the spatiotemporal resolution capabilities of the system.

  19. High tracking resolution detectors. Final Technical Report

    International Nuclear Information System (INIS)

    Vasile, Stefan; Li, Zheng

    2010-01-01

    High-resolution tracking detectors based on Active Pixel Sensor (APS) have been valuable tools in Nuclear Physics and High-Energy Physics research, and have contributed to major discoveries. Their integration time, radiation length and readout rate is a limiting factor for the planed luminosity upgrades in nuclear and high-energy physics collider-based experiments. The goal of this program was to demonstrate and develop high-gain, high-resolution tracking detector arrays with faster readout, and shorter radiation length than APS arrays. These arrays may operate as direct charged particle detectors or as readouts of high resolution scintillating fiber arrays. During this program, we developed in CMOS large, high-resolution pixel sensor arrays with integrated readout, and reset at pixel level. Their intrinsic gain, high immunity to surface and moisture damage, will allow operating these detectors with minimal packaging/passivation requirements and will result in radiation length superior to APS. In Phase I, we designed and fabricated arrays with calorimetric output capable of sub-pixel resolution and sub-microsecond readout rate. The technical effort was dedicated to detector and readout structure development, performance verification, as well as to radiation damage and damage annealing.

  20. A Dual-Mode Large-Arrayed CMOS ISFET Sensor for Accurate and High-Throughput pH Sensing in Biomedical Diagnosis.

    Science.gov (United States)

    Huang, Xiwei; Yu, Hao; Liu, Xu; Jiang, Yu; Yan, Mei; Wu, Dongping

    2015-09-01

    The existing ISFET-based DNA sequencing detects hydrogen ions released during the polymerization of DNA strands on microbeads, which are scattered into microwell array above the ISFET sensor with unknown distribution. However, false pH detection happens at empty microwells due to crosstalk from neighboring microbeads. In this paper, a dual-mode CMOS ISFET sensor is proposed to have accurate pH detection toward DNA sequencing. Dual-mode sensing, optical and chemical modes, is realized by integrating a CMOS image sensor (CIS) with ISFET pH sensor, and is fabricated in a standard 0.18-μm CIS process. With accurate determination of microbead physical locations with CIS pixel by contact imaging, the dual-mode sensor can correlate local pH for one DNA slice at one location-determined microbead, which can result in improved pH detection accuracy. Moreover, toward a high-throughput DNA sequencing, a correlated-double-sampling readout that supports large array for both modes is deployed to reduce pixel-to-pixel nonuniformity such as threshold voltage mismatch. The proposed CMOS dual-mode sensor is experimentally examined to show a well correlated pH map and optical image for microbeads with a pH sensitivity of 26.2 mV/pH, a fixed pattern noise (FPN) reduction from 4% to 0.3%, and a readout speed of 1200 frames/s. A dual-mode CMOS ISFET sensor with suppressed FPN for accurate large-arrayed pH sensing is proposed and demonstrated with state-of-the-art measured results toward accurate and high-throughput DNA sequencing. The developed dual-mode CMOS ISFET sensor has great potential for future personal genome diagnostics with high accuracy and low cost.

  1. Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

    Directory of Open Access Journals (Sweden)

    Khalil Jradi

    2014-12-01

    Full Text Available Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 µm down to 5 µm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD.

  2. Advancing the technology of monolithic CMOS detectors for use as x-ray imaging spectrometers

    Science.gov (United States)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Amato, Stephen

    2017-08-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff has been engaged in a multi year effort to advance the technology of monolithic back-thinned CMOS detectors for use as X-ray imaging spectrometers. The long term goal of this campaign is to produce X-ray Active Pixel Sensor (APS) detectors with Fano limited performance over the 0.1-10keV band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Such devices would be ideal for candidate post 2020 decadal missions such as LYNX and for smaller more immediate applications such as CubeX. Devices from a recent fabrication have been back-thinned, packaged and tested for soft X-ray response. These devices have 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels with ˜135μV/electron sensitivity and a highly parallel signal chain. These new detectors are fabricated on 10μm epitaxial silicon and have a 1k by 1k format. We present details of our camera design and device performance with particular emphasis on those aspects of interest to single photon counting X-ray astronomy. These features include read noise, X-ray spectral response and quantum efficiency.

  3. A 0.18 μm CMOS fluorescent detector system for bio-sensing application

    Science.gov (United States)

    Nan, Liu; Guoping, Chen; Zhiliang, Hong

    2009-01-01

    A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm2 and consumes 37 mW.

  4. A 0.18 μm CMOS fluorescent detector system for bio-sensing application

    International Nuclear Information System (INIS)

    Liu Nan; Chen Guoping; Hong Zhiliang

    2009-01-01

    A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm 2 and consumes 37 mW.

  5. The Argonne silicon strip-detector array

    Energy Technology Data Exchange (ETDEWEB)

    Wuosmaa, A H; Back, B B; Betts, R R; Freer, M; Gehring, J; Glagola, B G; Happ, Th; Henderson, D J; Wilt, P [Argonne National Lab., IL (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States). Dept. of Physics

    1992-08-01

    Many nuclear physics experiments require the ability to analyze events in which large numbers of charged particles are detected and identified simultaneously, with good resolution and high efficiency, either alone, or in coincidence with gamma rays. The authors have constructed a compact large-area detector array to measure these processes efficiently and with excellent energy resolution. The array consists of four double-sided silicon strip detectors, each 5x5 cm{sup 2} in area, with front and back sides divided into 16 strips. To exploit the capability of the device fully, a system to read each strip-detector segment has been designed and constructed, based around a custom-built multi-channel preamplifier. The remainder of the system consists of high-density CAMAC modules, including multi-channel discriminators, charge-sensing analog-to-digital converters, and time-to-digital converters. The array`s performance has been evaluated using alpha-particle sources, and in a number of experiments conducted at Argonne and elsewhere. Energy resolutions of {Delta}E {approx} 20-30 keV have been observed for 5 to 8 MeV alpha particles, as well as time resolutions {Delta}T {<=} 500 ps. 4 figs.

  6. A novel CMOS sensor with in-pixel auto-zeroed discrimination for charged particle tracking

    International Nuclear Information System (INIS)

    Degerli, Y; Guilloux, F; Orsini, F

    2014-01-01

    With the aim of developing fast and granular Monolithic Active Pixels Sensors (MAPS) as new charged particle tracking detectors for high energy physics experiments, a new rolling shutter binary pixel architecture concept (RSBPix) with in-pixel correlated double sampling, amplification and discrimination is presented. The discriminator features auto-zeroing in order to compensate process-related transistor mismatches. In order to validate the pixel, a first monolithic CMOS sensor prototype, including a pixel array of 96 × 64 pixels, has been designed and fabricated in the Tower-Jazz 0.18 μm CMOS Image Sensor (CIS) process. Results of laboratory tests are presented

  7. Data acquisition for experiments with multi-detector arrays

    Indian Academy of Sciences (India)

    Experiments with multi-detector arrays have special requirements and place higher demands on computer data acquisition systems. In this contribution we discuss data acquisition systems with special emphasis on multi-detector arrays and in particular we describe a new data acquisition system, AMPS which we have ...

  8. Low-energy CZT detector array for the ASIM mission

    DEFF Research Database (Denmark)

    Cenkeramaddi, Linga Reddy; Genov, Georgi; Kohfeldt, Anja

    2012-01-01

    In this article we introduce the low-energy CZT (CdZnTe) 16 384-pixel detector array on-board the Atmosphere Space Interaction Monitor (ASIM), funded by the European Space Agency. This detector is a part of the larger Modular X-and Gamma-ray sensor (MXGS). The CZT detector array is sensitive...... to photons with energies between 15 keV and 400 keV. The principal objective of the MXGS instrument is to detect Terrestrial Gamma ray Flashes (TGFs), which are related to thunderstorm activity. The concept of the detector array is presented, together with brief descriptions of its mechanical structure...

  9. Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

    Science.gov (United States)

    Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

    2017-03-07

    High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm -1 ) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

  10. A theoretical investigation of spectra utilization for a CMOS based indirect detector for dual energy applications

    International Nuclear Information System (INIS)

    Kalyvas, N; Michail, C; Valais, I; Kandarakis, I; Fountos, G; Martini, N; Koukou, V; Sotiropoulou, P

    2015-01-01

    Dual Energy imaging is a promising method for visualizing masses and microcalcifications in digital mammography. Currently commercially available detectors may be suitable for dual energy mammographic applications. The scope of this work was to theoretically examine the performance of the Radeye CMOS digital indirect detector under three low- and high-energy spectral pairs. The detector was modeled through the linear system theory. The pixel size was equal to 22.5μm and the phosphor material of the detector was a 33.9 mg/cm 2 Gd 2 O 2 S:Tb phosphor screen. The examined spectral pairs were (i) a 40kV W/Ag (0.01cm) and a 70kV W/Cu (0.1cm) target/filter combinations, (ii) a 40kV W/Cd (0.013cm) and a 70kV W/Cu (0.1cm) target/filter combinations and (iii) a 40kV W/Pd (0.008cm) and a 70kV W/Cu (0.1cm) target/filter combinations. For each combination the Detective Quantum Efficiency (DQE), showing the signal to noise ratio transfer, the detector optical gain (DOG), showing the sensitivity of the detector and the coefficient of variation (CV) of the detector output signal were calculated. The second combination exhibited slightly higher DOG (326 photons per X-ray) and lower CV (0.755%) values. In terms of electron output from the RadEye CMOS, the first two combinations demonstrated comparable DQE values; however the second combination provided an increase of 6.5% in the electron output. (paper)

  11. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    International Nuclear Information System (INIS)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-01-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

  12. Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1991-11-01

    A CMOS process that is compatible with silicon p-i-n radiation detectors has been developed and characterized. A total of twelve mask layers are used in the process. The NMOS device is formed in a retrograde well while the PMOS device is fabricated directly in the high-resistivity silicon. Isolation characteristics are similar to a standard foundary CMOS process. Circuit performance using 3 μm design rules has been evaluated. The measured propagation delay and power-delay product for a 51-stage ring oscillator was 1.5 ns and 43 fJ, respectively. Measurements on a simple cascode amplifier results in a gain-bandwidth product of 200 MHz at a bias current of 15 μA. The input-referred noise of the cascode amplifier is 20 nV/√Hz at 1 MHz

  13. Low-power high-accuracy micro-digital sun sensor by means of a CMOS image sensor

    NARCIS (Netherlands)

    Xie, N.; Theuwissen, A.J.P.

    2013-01-01

    A micro-digital sun sensor (?DSS) is a sun detector which senses a satellite’s instant attitude angle with respect to the sun. The core of this sensor is a system-on-chip imaging chip which is referred to as APS+. The APS+ integrates a CMOS active pixel sensor (APS) array of 368×368??pixels , a

  14. Array Detector Modules for Spent Fuel Verification

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, Aleksey

    2018-05-07

    Brookhaven National Laboratory (BNL) proposes to evaluate the arrays of position-sensitive virtual Frisch-grid (VFG) detectors for passive gamma-ray emission tomography (ET) to verify the spent fuel in storage casks before storing them in geo-repositories. Our primary objective is to conduct a preliminary analysis of the arrays capabilities and to perform field measurements to validate the effectiveness of the proposed array modules. The outcome of this proposal will consist of baseline designs for the future ET system which can ultimately be used together with neutrons detectors. This will demonstrate the usage of this technology in spent fuel storage casks.

  15. Development of front-end electronics for LumiCal detector in CMOS 130 nm technology

    CERN Document Server

    Firlej, M; Idzik, M; Moron, J; Swientek, K; Terlecki, P

    2015-01-01

    front-end electronics for luminosity detector at future Linear Collider are presented. The 8-channel prototype was designed and fabricated in a 130 nm CMOS technology. Each channel comprises a charge sensitive preamplifier with pole-zero cancellation circuit and a CR-RC shaper with 50 ns peaking time. The measurements results confirm full functionality of the prototype and compliance with the requirements imposed by the detector specification. The power consumption of the front-end is in the range 0.6–1.5 mW per channel and the noise ENC around 900 e− at 10 pF input capacitance.

  16. Progress on uncooled PbSe detectors for low-cost applications

    Science.gov (United States)

    Vergara, German; Gomez, Luis J.; Villamayor, Victor; Alvarez, M.; Rodrigo, Maria T.; del Carmen Torquemada, Maria; Sanchez, Fernando J.; Verdu, Marina; Diezhandino, Jorge; Rodriguez, Purificacion; Catalan, Irene; Almazan, Rosa; Plaza, Julio; Montojo, Maria T.

    2004-08-01

    This work reports on progress on development of polycrystalline PbSe infrared detectors at the Centro de Investigacion y Desarrollo de la Armada (CIDA). Since mid nineties, the CIDA owns an innovative technology for processing uncooled MWIR detectors of polycrystalline PbSe. Based on this technology, some applications have been developed. However, future applications demand smarter, more complex, faster yet cheaper detectors. Aiming to open new perspectives to polycrystalline PbSe detectors, we are currently working on different directions: 1) Processing of 2D arrays: a) Designing and processing low density x-y addressed arrays with 16x16 and 32x32 elements, as an extension of our standard technology. b) Trying to make compatible standard CMOS and polycrystalline PbSe technologies in order to process monolithic large format arrays. 2) Adding new features to the detector such as monolithically integrated spectral discrimination.

  17. Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection.

    Science.gov (United States)

    Nasri, Bayan; Wu, Ting; Alharbi, Abdullah; You, Kae-Dyi; Gupta, Mayank; Sebastian, Sunit P; Kiani, Roozbeh; Shahrjerdi, Davood

    2017-12-01

    We introduce a hybrid CMOS-graphene sensor array for subsecond measurement of dopamine via fast-scan cyclic voltammetry (FSCV). The prototype chip has four independent CMOS readout channels, fabricated in a 65-nm process. Using planar multilayer graphene as biologically compatible sensing material enables integration of miniaturized sensing electrodes directly above the readout channels. Taking advantage of the chemical specificity of FSCV, we introduce a region of interest technique, which subtracts a large portion of the background current using a programmable low-noise constant current at about the redox potentials. We demonstrate the utility of this feature for enhancing the sensitivity by measuring the sensor response to a known dopamine concentration in vitro at three different scan rates. This strategy further allows us to significantly reduce the dynamic range requirements of the analog-to-digital converter (ADC) without compromising the measurement accuracy. We show that an integrating dual-slope ADC is adequate for digitizing the background-subtracted current. The ADC operates at a sampling frequency of 5-10 kHz and has an effective resolution of about 60 pA, which corresponds to a theoretical dopamine detection limit of about 6 nM. Our hybrid sensing platform offers an effective solution for implementing next-generation FSCV devices that can enable precise recording of dopamine signaling in vivo on a large scale.

  18. An eight channel low-noise CMOS readout circuit for silicon detectors with on-chip front-end FET

    International Nuclear Information System (INIS)

    Fiorini, C.; Porro, M.

    2006-01-01

    We propose a CMOS readout circuit for the processing of signals from multi-channel silicon detectors to be used in X-ray spectroscopy and γ-ray imaging applications. The circuit is composed by eight channels, each one featuring a low-noise preamplifier, a 6th-order semigaussian shaping amplifier with four selectable peaking times, from 1.8 up to 6 μs, a peak stretcher and a discriminator. The circuit is conceived to be used with silicon detectors with a front-end FET integrated on the detector chips itself, like silicon drift detectors with JFET and pixel detectors with DEPMOS. The integrated time constants used for the shaping are implemented by means of an RC-cell, based on the technique of demagnification of the current flowing in a resistor R by means of the use of current mirrors. The eight analog channels of the chip are multiplexed to a single analog output. A suitable digital section provides self-resetting of each channel and trigger output and is able to set independent thresholds on the analog channels by means of a programmable serial register and 3-bit DACs. The circuit has been realized in the 0.35 μm CMOS AMS technology. In this work, the main features of the circuit are presented along with the experimental results of its characterization

  19. Photoacoustic projection imaging using an all-optical detector array

    Science.gov (United States)

    Bauer-Marschallinger, J.; Felbermayer, K.; Berer, T.

    2018-02-01

    We present a prototype for all-optical photoacoustic projection imaging. By generating projection images, photoacoustic information of large volumes can be retrieved with less effort compared to common photoacoustic computed tomography where many detectors and/or multiple measurements are required. In our approach, an array of 60 integrating line detectors is used to acquire photoacoustic waves. The line detector array consists of fiber-optic MachZehnder interferometers, distributed on a cylindrical surface. From the measured variation of the optical path lengths of the interferometers, induced by photoacoustic waves, a photoacoustic projection image can be reconstructed. The resulting images represent the projection of the three-dimensional spatial light absorbance within the imaged object onto a two-dimensional plane, perpendicular to the line detector array. The fiber-optic detectors achieve a noise-equivalent pressure of 24 Pascal at a 10 MHz bandwidth. We present the operational principle, the structure of the array, and resulting images. The system can acquire high-resolution projection images of large volumes within a short period of time. Imaging large volumes at high frame rates facilitates monitoring of dynamic processes.

  20. AIGO: a southern hemisphere detector for the worldwide array of ground-based interferometric gravitational wave detectors

    Energy Technology Data Exchange (ETDEWEB)

    Barriga, P; Blair, D G; Coward, D; Davidson, J; Dumas, J-C; Howell, E; Ju, L; Wen, L; Zhao, C [School of Physics, The University of Western Australia, Crawley, WA 6009 (Australia); McClelland, D E; Scott, S M; Slagmolen, B J J; Inta, R [Department of Physics, Faculty of Science, Australian National University, Canberra, ACT 0200 (Australia); Munch, J; Ottaway, D J; Veitch, P; Hosken, D [Department of Physics, University of Adelaide, Adelaide, SA 5005 (Australia); Melatos, A; Chung, C; Sammut, L, E-mail: pbarriga@cyllene.uwa.edu.a [School of Physics University of Melbourne, Parkville, Vic 3010 (Australia)

    2010-04-21

    This paper describes the proposed AIGO detector for the worldwide array of interferometric gravitational wave detectors. The first part of the paper summarizes the benefits that AIGO provides to the worldwide array of detectors. The second part gives a technical description of the detector, which will follow closely the Advanced LIGO design. Possible technical variations in the design are discussed.

  1. AIGO: a southern hemisphere detector for the worldwide array of ground-based interferometric gravitational wave detectors

    OpenAIRE

    Barriga, P.; Blair, D.; Coward, D.; Davidson, J.; Dumas, J.; Howell, E.; Ju, L.; Wen, L.; Zhao, C.; McClelland, D.; Scott, S.; Slagmolen, B.; Inta, R.; Munch, J.; Ottaway, D.

    2010-01-01

    This paper describes the proposed AIGO detector for the worldwide array of interferometric gravitational wave detectors. The first part of the paper summarizes the benefits that AIGO provides to the worldwide array of detectors. The second part gives a technical description of the detector, which will follow closely the Advanced LIGO design. Possible technical variations in the design are discussed.

  2. Characterisation results of the CMOS VISNIR spectral band detector for the METimage instrument

    Science.gov (United States)

    Pratlong, Jérôme; Schmuelling, Frank; Benitez, Victor; Breart De Boisanger, Michel; Skegg, Michael; Simpson, Robert; Bowring, Steve; Krzizok, Natalie

    2017-09-01

    The METimage instrument is part of the EPS-SG (EUMETSAT Polar System Second Generation) program. It will be situated on the MetOp-SG platform which in operation has an objective of collecting data for meteorology and climate monitoring as well as their forecasting. Teledyne e2v has developed and characterised the CMOS VISNIR detector flight module part of the METimage instrument. This paper will focus on the silicon results obtained from the CMOS VISNIR detector flight model. The detector is a large multi-linear device composed of 7 spectral bands covering a wavelength range from 428 nm to 923 nm (some bands are placed twice and added together to enhance the signal-to-noise performance). This detector uses a 4T pixel, with a size of 250μm square, presenting challenges to achieve good charge transfer efficiency with high conversion factor and good linearity for signal levels up to 2M electrons and with high line rates. Low noise has been achieved using correlated double sampling to suppress the read-out noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. The photodiode occupies a significant fraction of the large pixel area. This makes it possible to meet the detection efficiency when front illuminated. A thicker than standard epitaxial silicon is used to improve NIR response. However, the dielectric stack on top of the sensor produces Fabry-Perot étalon effects, which are problematic for narrow band illumination as this causes the detection efficiency to vary significantly over a small wavelength range. In order to reduce this effect and to meet the specification, the silicon manufacturing process has been modified. The flight model will have black coating deposited between each spectral channel, onto the active silicon regions.

  3. 64 x 64 thresholding photodetector array for optical pattern recognition

    Science.gov (United States)

    Langenbacher, Harry; Chao, Tien-Hsin; Shaw, Timothy; Yu, Jeffrey W.

    1993-10-01

    A high performance 32 X 32 peak detector array is introduced. This detector consists of a 32 X 32 array of thresholding photo-transistor cells, manufactured with a standard MOSIS digital 2-micron CMOS process. A built-in thresholding function that is able to perform 1024 thresholding operations in parallel strongly distinguishes this chip from available CCD detectors. This high speed detector offers responses from one to 10 milliseconds that is much higher than the commercially available CCD detectors operating at a TV frame rate. The parallel multiple peaks thresholding detection capability makes it particularly suitable for optical correlator and optoelectronically implemented neural networks. The principle of operation, circuit design and the performance characteristics are described. Experimental demonstration of correlation peak detection is also provided. Recently, we have also designed and built an advanced version of a 64 X 64 thresholding photodetector array chip. Experimental investigation of using this chip for pattern recognition is ongoing.

  4. Neutron absorbed dose in a pacemaker CMOS

    International Nuclear Information System (INIS)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

    2012-01-01

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

  5. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2012-06-15

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

  6. Recent upgrades and performance of the CACTUS detector array

    International Nuclear Information System (INIS)

    Schiller, A.; Bergholt, L.; Guttormsen, M.

    1998-03-01

    The SCANDITRONIX MC-35 cyclotron laboratory, including the Oslo Cyclotron, has been in operation since 1980. The main auxiliary equipment consists of the multi-detector system CACTUS. During the last years, new, high efficiency Ge(HP) detectors were purchased and integrated in the CACTUS detector array. In this connection, the electronical setup was revised and altered. Several drawbacks of the old setup could be pointed out and eliminated. A test of the performance of all detector array elements was made with high accuracy. 27 refs

  7. Infrared LED Array For Silicon Strip Detector Qualification

    CERN Document Server

    Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

    2003-01-01

    The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

  8. Design and standalone characterisation of a capacitively coupled HV-CMOS sensor chip for the CLIC vertex detector

    Science.gov (United States)

    Kremastiotis, I.; Ballabriga, R.; Campbell, M.; Dannheim, D.; Fiergolski, A.; Hynds, D.; Kulis, S.; Peric, I.

    2017-09-01

    The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial 180 nm HV-CMOS process and contains a matrix of 128×128 square pixels with 25μm pitch. First prototypes have been produced with a standard resistivity of ~20 Ωcm for the substrate and tested in standalone mode. The results show a rise time of ~20 ns, charge gain of 190 mV/ke- and ~40 e- RMS noise for a power consumption of 4.8μW/pixel. The main design aspects, as well as standalone measurement results, are presented.

  9. sCMOS detector for imaging VNIR spectrometry

    Science.gov (United States)

    Eckardt, Andreas; Reulke, Ralf; Schwarzer, Horst; Venus, Holger; Neumann, Christian

    2013-09-01

    The facility Optical Information Systems (OS) at the Robotics and Mechatronics Center of the German Aerospace Center (DLR) has more than 30 years of experience with high-resolution imaging technology. This paper shows the scientific results of the institute of leading edge instruments and focal plane designs for EnMAP VIS/NIR spectrograph. EnMAP (Environmental Mapping and Analysis Program) is one of the selected proposals for the national German Space Program. The EnMAP project includes the technological design of the hyper spectral space borne instrument and the algorithms development of the classification. The EnMAP project is a joint response of German Earth observation research institutions, value-added resellers and the German space industry like Kayser-Threde GmbH (KT) and others to the increasing demand on information about the status of our environment. The Geo Forschungs Zentrum (GFZ) Potsdam is the Principal Investigator of EnMAP. DLR OS and KT were driving the technology of new detectors and the FPA design for this project, new manufacturing accuracy and on-chip processing capability in order to keep pace with the ambitious scientific and user requirements. In combination with the engineering research, the current generations of space borne sensor systems are focusing on VIS/NIR high spectral resolution to meet the requirements on earth and planetary observation systems. The combination of large swath and high spectral resolution with intelligent synchronization control, fast-readout ADC chains and new focal-plane concepts open the door to new remote-sensing and smart deep space instruments. The paper gives an overview over the detector verification program at DLR on FPA level, new control possibilities for sCMOS detectors in global shutter mode and key parameters like PRNU, DSNU, MTF, SNR, Linearity, Spectral Response, Quantum Efficiency, Flatness and Radiation Tolerance will be discussed in detail.

  10. Photon counting arrays for AO wavefront sensors

    CERN Document Server

    Vallerga, J; McPhate, J; Mikulec, Bettina; Clark, Allan G; Siegmund, O; CERN. Geneva

    2005-01-01

    Future wavefront sensors for AO on large telescopes will require a large number of pixels and must operate at high frame rates. Unfortunately for CCDs, there is a readout noise penalty for operating faster, and this noise can add up rather quickly when considering the number of pixels required for the extended shape of a sodium laser guide star observed with a large telescope. Imaging photon counting detectors have zero readout noise and many pixels, but have suffered in the past with low QE at the longer wavelengths (>500 nm). Recent developments in GaAs photocathode technology, CMOS ASIC readouts and FPGA processing electronics have resulted in noiseless WFS detector designs that are competitive with silicon array detectors, though at ~40% the QE of CCDs. We review noiseless array detectors and compare their centroiding performance with CCDs using the best available characteristics of each. We show that for sub-aperture binning of 6x6 and greater that noiseless detectors have a smaller centroid error at flu...

  11. WE-AB-207A-01: BEST IN PHYSICS (IMAGING): High-Resolution Cone-Beam CT of the Extremities and Cancellous Bone Architecture with a CMOS Detector

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Q; Brehler, M; Sisniega, A; Marinetto, E; Stayman, J; Siewerdsen, J; Zbijewski, W [Johns Hopkins University, Baltimore, MD (United States); Zyazin, A; Peters, I [Teledyne DALSA, Eindhoven (Netherlands); Yorkston, J [Carestream Health, Inc, Penfield, NY (United States)

    2016-06-15

    Purpose: Extremity cone-beam CT (CBCT) with an amorphous silicon (aSi) flat-panel detector (FPD) provides low-dose volumetric imaging with high spatial resolution. We investigate the performance of the newer complementary metal-oxide semiconductor (CMOS) detectors to enhance resolution of extremities CBCT to ∼0.1 mm, enabling morphological analysis of trabecular bone. Quantitative in-vivo imaging of bone microarchitecture could present an important advance for osteoporosis and osteoarthritis diagnosis and therapy assessment. Methods: Cascaded systems models of CMOS- and FPD-based extremities CBCT were implemented. Performance was compared for a range of pixel sizes (0.05–0.4 mm), focal spot sizes (0.3–0.6 FS), and x-ray techniques (0.05–0.8 mAs/projection) using detectability of high-, low-, and all-frequency tasks for a nonprewhitening observer. Test-bench implementation of CMOS-based extremity CBCT involved a Teledyne DALSA Xineos3030HR detector with 0.099 mm pixels and a compact rotating anode x-ray source with 0.3 FS (IMD RTM37). Metrics of bone morphology obtained using CMOS-based CBCT were compared in cadaveric specimens to FPD-based system using a Varian PaxScan4030 (0.194 mm pixels). Results: Finer pixel size and reduced electronic noise for CMOS (136 e compared to 2000 e for FPD) resulted in ∼1.9× increase in detectability for high-frequency tasks and ∼1.1× increase for all-frequency tasks. Incorporation of the new x-ray source with reduced focal spot size (0.3 FS vs. 0.5 FS used on current extremities CBCT) improved detectability for CMOS-based CBCT by ∼1.7× for high-frequency tasks. Compared to FPD CBCT, the CMOS detector yielded improved agreement with micro-CT in measurements of trabecular thickness (∼1.7× reduction in relative error), bone volume (∼1.5× reduction), and trabecular spacing (∼3.5× reduction). Conclusion: Imaging performance modelling and experimentation indicate substantial improvements for high

  12. WE-AB-207A-01: BEST IN PHYSICS (IMAGING): High-Resolution Cone-Beam CT of the Extremities and Cancellous Bone Architecture with a CMOS Detector

    International Nuclear Information System (INIS)

    Cao, Q; Brehler, M; Sisniega, A; Marinetto, E; Stayman, J; Siewerdsen, J; Zbijewski, W; Zyazin, A; Peters, I; Yorkston, J

    2016-01-01

    Purpose: Extremity cone-beam CT (CBCT) with an amorphous silicon (aSi) flat-panel detector (FPD) provides low-dose volumetric imaging with high spatial resolution. We investigate the performance of the newer complementary metal-oxide semiconductor (CMOS) detectors to enhance resolution of extremities CBCT to ∼0.1 mm, enabling morphological analysis of trabecular bone. Quantitative in-vivo imaging of bone microarchitecture could present an important advance for osteoporosis and osteoarthritis diagnosis and therapy assessment. Methods: Cascaded systems models of CMOS- and FPD-based extremities CBCT were implemented. Performance was compared for a range of pixel sizes (0.05–0.4 mm), focal spot sizes (0.3–0.6 FS), and x-ray techniques (0.05–0.8 mAs/projection) using detectability of high-, low-, and all-frequency tasks for a nonprewhitening observer. Test-bench implementation of CMOS-based extremity CBCT involved a Teledyne DALSA Xineos3030HR detector with 0.099 mm pixels and a compact rotating anode x-ray source with 0.3 FS (IMD RTM37). Metrics of bone morphology obtained using CMOS-based CBCT were compared in cadaveric specimens to FPD-based system using a Varian PaxScan4030 (0.194 mm pixels). Results: Finer pixel size and reduced electronic noise for CMOS (136 e compared to 2000 e for FPD) resulted in ∼1.9× increase in detectability for high-frequency tasks and ∼1.1× increase for all-frequency tasks. Incorporation of the new x-ray source with reduced focal spot size (0.3 FS vs. 0.5 FS used on current extremities CBCT) improved detectability for CMOS-based CBCT by ∼1.7× for high-frequency tasks. Compared to FPD CBCT, the CMOS detector yielded improved agreement with micro-CT in measurements of trabecular thickness (∼1.7× reduction in relative error), bone volume (∼1.5× reduction), and trabecular spacing (∼3.5× reduction). Conclusion: Imaging performance modelling and experimentation indicate substantial improvements for high

  13. BiCMOS amplifier-discriminator integrated circuit for gas-filled detector readout

    International Nuclear Information System (INIS)

    Herve, C.; Dzahini, D.; Le Caer, T.; Richer, J.-P.; Torki, K.

    2005-01-01

    The paper presents a 16-channel amplifier-discriminator designed in BiCMOS technology. It will be used for the binary parallel readout of gas-filled detectors being designed at the European Synchrotron Radiation Facility. The circuit (named AMS211) has been manufactured. The measured transimpedance gain (400 KΩ), bandwidth (25 MHz) and noise (1570 e - +95 e - /pF ENC) well match the simulated results. The discriminator thresholds are individually controlled by built-in Digital to Analogue Converter. The experience gained with a first prototype of readout electronics indicates that the AMS211 should meet our requirements

  14. BiCMOS amplifier-discriminator integrated circuit for gas-filled detector readout

    Energy Technology Data Exchange (ETDEWEB)

    Herve, C. [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex (France)]. E-mail: herve@esrf.fr; Dzahini, D. [Laboratoire de Physique Subatomique et de Cosmologie, Grenoble (France); Le Caer, T. [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex (France); Richer, J.-P. [Laboratoire de Physique Subatomique et de Cosmologie, Grenoble (France); Torki, K. [Laboratoire TIMA, Grenoble (France)

    2005-03-21

    The paper presents a 16-channel amplifier-discriminator designed in BiCMOS technology. It will be used for the binary parallel readout of gas-filled detectors being designed at the European Synchrotron Radiation Facility. The circuit (named AMS211) has been manufactured. The measured transimpedance gain (400 K{omega}), bandwidth (25 MHz) and noise (1570 e{sup -}+95 e{sup -}/pF ENC) well match the simulated results. The discriminator thresholds are individually controlled by built-in Digital to Analogue Converter. The experience gained with a first prototype of readout electronics indicates that the AMS211 should meet our requirements.

  15. Array detector for neutron pre-emission investigations

    International Nuclear Information System (INIS)

    Petrascu, M.; Cruceru, I.; Bordeanu, C.

    1999-01-01

    It was predicted that in a fusion experiment induced by 11 Li halo nuclei on light targets, due to the very large dimension of 11 Li, one may expect that the valence neutrons will not be absorbed together with the 9 Li core, but will be emitted in the early stage of the fusion process. The experiment aiming at checking this expectation was performed at the RIKEN-RIPS facility. It was found from neutron energy spectra measurements, that an important number of fusions, more than 30%, are preceded by the pre-emission of one or two neutrons. In the position spectra measurements a very narrow neutron component has been found. This component is much narrower than that calculated by using the Cluster Shell Model Approximation (COSMA). The recent results of time- position coincidence measurements show that within the narrow component the neutrons are pre-emitted predominantly as neutron pairs. The Program Advisory Committee of RIKEN has approved a new measurement at RIKEN Ring Cyclotron aiming at investigation of neutron-neutron coincidences by using a new neutron array detector. This detector has been recently accomplished within the collaboration existing between IFIN-HH, Romania and RIKEN, Japan. The array system consists of 81 4 x 4 x 12 cm 3 BC400 plastic scintillators each coupled to XP2972 Phototubes. The mounting and the testing of the new neutron array detector will be done at RIKEN. The components of one of the 81 elements of the array detector are shown in a photo. The Monte Carlo calculated neutron detection efficiencies as a function of energy are shown. This detector will be used for the investigation of neutron-neutron coincidences in the case of Si( 11 Li, fusion) reaction. The cross- talk between adjacent and non adjacent detectors will be determined by using a 9 Li beam. As it is known in the case of Si( 9 Li, fusion) the neutrons are of evaporation origin, and since these neutrons are emitted in 4 π the chance for detecting 2 coincident neutrons in the

  16. CMOS direct time interval measurement of long-lived luminescence lifetimes.

    Science.gov (United States)

    Yao, Lei; Yung, Ka Yi; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

    2011-01-01

    We describe a Complementary Metal-Oxide Semiconductor (CMOS) Direct Time Interval Measurement (DTIM) Integrated Circuit (IC) to detect the decay (fall) time of the luminescence emission when analyte-sensitive luminophores are excited with an optical pulse. The CMOS DTIM IC includes 14 × 14 phototransistor array, transimpedance amplifier, regulated gain amplifier, fall time detector, and time-to-digital convertor. We examined the DTIM system to measure the emission lifetime of oxygen-sensitive luminophores tris(4,7-diphenyl-1, 10-phenanthroline) ruthenium(II) ([Ru(dpp)(3)](2+)) encapsulated in sol-gel derived xerogel thin-films. The DTIM system fabricated using TSMC 0.35 μm process functions to detect lifetimes from 4 μs to 14.4 μs but can be tuned to detect longer lifetimes. The system provides 8-bit digital output proportional to lifetimes and consumes 4.5 mW of power with 3.3 V DC supply. The CMOS system provides a useful platform for the development of reliable, robust, and miniaturized optical chemical sensors.

  17. Development of Single-Event Upset hardened programmable logic devices in deep submicron CMOS; Developpement de circuits logiques programmables resistants aux aleas logiques en technologie CMOS submicrometrique

    Energy Technology Data Exchange (ETDEWEB)

    Bonacini, S

    2007-11-15

    The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust (Single Event Upset) programmable components for application in high energy physics experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 {mu}m CMOS technology. The FPGA under development is a 32*32 logic block array, equivalent to {approx} 25 k gates, in 0.13 {mu}m CMOS. The irradiation test results obtained in the CMOS 0.25 {mu}m technology demonstrate good robustness of the circuit up to an LET (Linear Energy Transfer) of 79.6 cm{sup 2}*MeV/mg, which make it suitable for the target environment. The CMOS 0.13 {mu}m circuit has showed robustness to an LET of 37.4 cm{sup 2}*MeV/mg in the static test mode and has increased sensitivity in the dynamic test mode. This work focused also on the research for an SEU-robust register in both the mentioned technologies. The SEU-robust register is employed as a user data flip-flop in the FPGA and PLD designs and as a configuration cell as well in the FPGA design.

  18. Gamma-spectrometry with Compton suppressed detectors arrays

    International Nuclear Information System (INIS)

    Schueck, C.; Hannachi, F.; Chapman, R.

    1985-01-01

    Recent results of experiments performed with two different Compton-suppressed detectors arrays in Daresbury and Berkeley (/sup 163,164/Yb and 154 Er, respectively), are presented together with a brief description of the national French array presently under construction in Strasbourg. 25 refs., 15 figs

  19. A CMOS Integrating Amplifier for the PHENIX Ring Imaging Cherenkov detector

    International Nuclear Information System (INIS)

    Wintenberg, A.L.; Jones, J.P. Jr.; Young, G.R.; Moscone, C.G.

    1997-11-01

    A CMOS integrating amplifier has been developed for use in the PHENIX Ring Imaging Cherenkov (RICH) detector. The amplifier, consisting of a charge-integrating amplifier followed by a variable gain amplifier (VGA), is an element of a photon measurement system comprising a photomultiplier tube, a wideband, gain of 10 amplifier, the integrating amplifier, and an analog memory followed by an ADC and double correlated sampling implemented in software. The integrating amplifier is designed for a nominal full scale input of 160 pC with a gain of 20 mV/pC and a dynamic range of 1000:1. The VGA is used for equalizing gains prior to forming analog sums for trigger purposes. The gain of the VGA is variable over a 3:1 range using a 5 bits digital control, and the risetime is held to approximately 20 ns using switched compensation in the VGA. Details of the design and results from several prototype devices fabricated in 1.2 microm Orbit CMOS are presented. A complete noise analysis of the integrating amplifier and the correlated sampling process is included as well as a comparison of calculated, simulated and measured results

  20. A CMOS Integrating Amplifier for the PHENIX Ring Imaging Cherenkov detector

    Energy Technology Data Exchange (ETDEWEB)

    Wintenberg, A.L.; Jones, J.P. Jr.; Young, G.R. [Oak Ridge National Lab., TN (United States); Moscone, C.G. [Tennessee Univ., Knoxville, TN (United States)

    1997-11-01

    A CMOS integrating amplifier has been developed for use in the PHENIX Ring Imaging Cherenkov (RICH) detector. The amplifier, consisting of a charge-integrating amplifier followed by a variable gain amplifier (VGA), is an element of a photon measurement system comprising a photomultiplier tube, a wideband, gain of 10 amplifier, the integrating amplifier, and an analog memory followed by an ADC and double correlated sampling implemented in software. The integrating amplifier is designed for a nominal full scale input of 160 pC with a gain of 20 mV/pC and a dynamic range of 1000:1. The VGA is used for equalizing gains prior to forming analog sums for trigger purposes. The gain of the VGA is variable over a 3:1 range using a 5 bits digital control, and the risetime is held to approximately 20 ns using switched compensation in the VGA. Details of the design and results from several prototype devices fabricated in 1.2 {micro}m Orbit CMOS are presented. A complete noise analysis of the integrating amplifier and the correlated sampling process is included as well as a comparison of calculated, simulated and measured results.

  1. Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

    Energy Technology Data Exchange (ETDEWEB)

    Scarcella, Carmelo; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Villa, Federica; Tisa, Simone; Zappa, Franco [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2013-12-15

    We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 μm active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

  2. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    International Nuclear Information System (INIS)

    Esposito, M; Evans, P M; Wells, K; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Allinson, N M

    2014-01-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  3. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

    Science.gov (United States)

    Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

    2014-07-07

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  4. The FPGA Pixel Array Detector

    International Nuclear Information System (INIS)

    Hromalik, Marianne S.; Green, Katherine S.; Philipp, Hugh T.; Tate, Mark W.; Gruner, Sol M.

    2013-01-01

    A proposed design for a reconfigurable x-ray Pixel Array Detector (PAD) is described. It operates by integrating a high-end commercial field programmable gate array (FPGA) into a 3-layer device along with a high-resistivity diode detection layer and a custom, application-specific integrated circuit (ASIC) layer. The ASIC layer contains an energy-discriminating photon-counting front end with photon hits streamed directly to the FPGA via a massively parallel, high-speed data connection. FPGA resources can be allocated to perform user defined tasks on the pixel data streams, including the implementation of a direct time autocorrelation function (ACF) with time resolution down to 100 ns. Using the FPGA at the front end to calculate the ACF reduces the required data transfer rate by several orders of magnitude when compared to a fast framing detector. The FPGA-ASIC high-speed interface, as well as the in-FPGA implementation of a real-time ACF for x-ray photon correlation spectroscopy experiments has been designed and simulated. A 16×16 pixel prototype of the ASIC has been fabricated and is being tested. -- Highlights: ► We describe the novelty and need for the FPGA Pixel Array Detector. ► We describe the specifications and design of the Diode, ASIC and FPGA layers. ► We highlight the Autocorrelation Function (ACF) for speckle as an example application. ► Simulated FPGA output calculates the ACF for different input bitstreams to 100 ns. ► Reduced data transfer rate by 640× and sped up real-time ACF by 100× other methods.

  5. Silicon Drift Detectors - A Novel Technology for Vertex Detectors

    Science.gov (United States)

    Lynn, D.

    1996-10-01

    Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

  6. A Multi-Modality CMOS Sensor Array for Cell-Based Assay and Drug Screening.

    Science.gov (United States)

    Chi, Taiyun; Park, Jong Seok; Butts, Jessica C; Hookway, Tracy A; Su, Amy; Zhu, Chengjie; Styczynski, Mark P; McDevitt, Todd C; Wang, Hua

    2015-12-01

    In this paper, we present a fully integrated multi-modality CMOS cellular sensor array with four sensing modalities to characterize different cell physiological responses, including extracellular voltage recording, cellular impedance mapping, optical detection with shadow imaging and bioluminescence sensing, and thermal monitoring. The sensor array consists of nine parallel pixel groups and nine corresponding signal conditioning blocks. Each pixel group comprises one temperature sensor and 16 tri-modality sensor pixels, while each tri-modality sensor pixel can be independently configured for extracellular voltage recording, cellular impedance measurement (voltage excitation/current sensing), and optical detection. This sensor array supports multi-modality cellular sensing at the pixel level, which enables holistic cell characterization and joint-modality physiological monitoring on the same cellular sample with a pixel resolution of 80 μm × 100 μm. Comprehensive biological experiments with different living cell samples demonstrate the functionality and benefit of the proposed multi-modality sensing in cell-based assay and drug screening.

  7. CMOS-based avalanche photodiodes for direct particle detection

    International Nuclear Information System (INIS)

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

  8. First generation of deep n-well CMOS MAPS with in-pixel sparsification for the ILC vertex detector

    International Nuclear Information System (INIS)

    Traversi, Gianluca; Bulgheroni, Antonio; Caccia, Massimo; Jastrzab, Marcin; Manghisoni, Massimo; Pozzati, Enrico; Ratti, Lodovico; Re, Valerio

    2009-01-01

    In this paper we present the characterization results relevant to a deep n-well (DNW) CMOS active pixel sensor chip designed for vertexing applications at the International Linear Collider. In this chip, named sparsified digital readout (SDR0), for the first time we implemented a sparsification logic at the pixel level. The DNW available in deep submicron CMOS processes is used to collect the charge released in the substrate, and signal processing is performed by a classical optimum amplifying stage for capacitive detectors. In this work, the experimental characterization of the SDR0 chip, including data from radioactive source ( 55 Fe) tests, will be presented.

  9. In-beam test of Neutron detector array facility at IUAC

    International Nuclear Information System (INIS)

    Sugathan, P.; Jhingan, A.; Saneesh, S.

    2014-01-01

    A new experimental facility dedicated for the study of fission dynamics has been installed and commissioned recently at Inter University Accelerator Centre (IUAC), New Delhi. The facility, National Array of Neutron Detectors (NAND) is used for the systematic studies on fission dynamics around Coulomb barrier energies using heavy ion beams from the Tandem plus LINAC accelerator facilities. The detector array consists 100 neutron detectors mounted on a geodesic dome structure at a radial distance of 175 cm from the target and multi wire proportional counters (MWPC) for detection of fission fragments. Each neutron detector is made of 5'' x 5'' cylindrical cell filled with BC501A organic liquid scintillator and coupled to a 5'' photo multiplier tube. A 100 cm diameter spherical vacuum chamber has been installed at the center of the array to house the targets, fission fragment detectors and other ancillary charged particle detectors. The vacuum chamber is made of 4mm thick steel and has target ladder with linear and rotary movements. The detector array is installed on a dedicated beam line of LINAC accelerator facilities at beam hall II. The neutrons are discriminated from gamma rays using pulse shape discrimination (PSD) technique based on conventional analog electronics and the energies of neutrons are measured by the time of flight (TOF) method. For this purpose, custom made electronics modules have been built to process signal from each detector. This module contains the integrated electronics for n - γ discrimination, time of flight (TOF) and light output. The fission fragments are detected in low pressure MWPCs mounted inside the spherical vacuum chamber. The MWPC has been built based on the conventional design using three electrodes, having a central cathode foil electrode sandwiched between two position sensing anode wire/strip frames. In order to acquire data from detector array, the data acquisition system has been implemented using VME based hardware systems

  10. The NSLS 100 element solid state array detector

    International Nuclear Information System (INIS)

    Furenlid, L.R.; Beren, J.; Kraner, H.W.; Rogers, L.C.; Stephani, D.; Beuttenmuller, R.H.; Cramer, S.P.

    1992-01-01

    X-ray absorption studies of dilute samples require fluorescence detection techniques. Since signal-to-noise ratios are governed by the ratio of fluorescent to scattered photons counted by a detector, solid state detectors which can discriminate between fluorescence and scattered photons have become the instruments of choice for trace element measurements. Commercially available 13 element Ge array detectors permitting total count rates < 500 000 counts per second are now in routine use. Since X-ray absorption beamlines at high brightness synchrotron sources can already illuminate most dilute samples with enough flux to saturate the current generation of solid state detectors, the development of next-generation instruments with significantly higher total count rates is essential. We present the design and current status of the 100 elements Si array detector being developed in a collaboration between the NSLS and the Instrumentation Division at Brookhaven National Laboratory. The detecting array consists of a 10 x 10 matrix of 4 mm x 4 mm elements laid out on a single piece of ultrahigh purity silicon mounted at the front end of a liquid nitrogen dewar assembly. A matrix of charge sensitive integrating preamplifiers feed signals to an array of shaping amplifiers, single channel analyzers, and scalers. An electronic switch, delay amplifier, linear gate, digital scope, peak sensing A/D converter, and histogramming memory module provide for complete diagnostics and channel calibration. The entrie instrument is controlled by a LabView 2 application on a MacII ci; the software also provides full control over beamline hardware and performs the data collection. (orig.)

  11. Photon small-field measurements with a CMOS active pixel sensor.

    Science.gov (United States)

    Spang, F Jiménez; Rosenberg, I; Hedin, E; Royle, G

    2015-06-07

    In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm(2). The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications.

  12. Integrated 60GHz RF beamforming in CMOS

    CERN Document Server

    Yu, Yikun; van Roermund, Arthur H M

    2011-01-01

    ""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

  13. Depleted CMOS pixels for LHC proton–proton experiments

    International Nuclear Information System (INIS)

    Wermes, N.

    2016-01-01

    While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

  14. Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

    Science.gov (United States)

    Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio M.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty; hide

    2016-01-01

    The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline pro le leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modi ed to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

  15. An 80x80 microbolometer type thermal imaging sensor using the LWIR-band CMOS infrared (CIR) technology

    Science.gov (United States)

    Tankut, Firat; Cologlu, Mustafa H.; Askar, Hidir; Ozturk, Hande; Dumanli, Hilal K.; Oruc, Feyza; Tilkioglu, Bilge; Ugur, Beril; Akar, Orhan Sevket; Tepegoz, Murat; Akin, Tayfun

    2017-02-01

    This paper introduces an 80x80 microbolometer array with a 35 μm pixel pitch operating in the 8-12 μm wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a novel microbolometer implementation technique developed to reduce the detector cost in order to enable the use of microbolometer type sensors in high volume markets, such as the consumer market and IoT. Unlike the widely used conventional surface micromachined microbolometer approaches, MikroSens' CIR detector technology does not require the use of special high TCR materials like VOx or a-Si, instead, it allows to implement microbolometers with standard CMOS layers, where the suspended bulk micromachined structure is obtained by only few consecutive selective MEMS etching steps while protecting the wirebond pads with a simple lithograpy step. This approach not only reduces the fabrication cost but also increases the production yield. In addition, needing simple subtractive post-CMOS fabrication steps allows the CIR technology to be carried out in any CMOS and MEMS foundry in a truly fabless fashion, where industrially mature and Au-free wafer level vacuum packaging technologies can also be carried out, leading to cost advantage, simplicity, scalability, and flexibility. The CIR approach is used to implement an 80x80 FPA with 35 μm pixel pitch, namely MS0835A, using a 0.18 μm CMOS process. The fabricated sensor is measured to provide NETD (Noise Equivalent Temperature Difference) value of 163 mK at 17 fps (frames per second) and 71 mK at 4 fps with F/1.0 optics in a dewar environment. The measurement results of the wafer level vacuum packaged sensors with one side AR coating shows an NETD values of 112 mK at 4 fps with F/1.1 optics, i.e., demonstrates a good performance for high volume low-cost applications like advanced presence detection and human counting applications. The CIR approach of MikroSens is scalable and can be used to

  16. Hybrid CMOS/Molecular Integrated Circuits

    Science.gov (United States)

    Stan, M. R.; Rose, G. S.; Ziegler, M. M.

    CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

  17. Design considerations for a new, high resolution Micro-Angiographic Fluoroscope based on a CMOS sensor (MAF-CMOS).

    Science.gov (United States)

    Loughran, Brendan; Swetadri Vasan, S N; Singh, Vivek; Ionita, Ciprian N; Jain, Amit; Bednarek, Daniel R; Titus, Albert; Rudin, Stephen

    2013-03-06

    The detectors that are used for endovascular image-guided interventions (EIGI), particularly for neurovascular interventions, do not provide clinicians with adequate visualization to ensure the best possible treatment outcomes. Developing an improved x-ray imaging detector requires the determination of estimated clinical x-ray entrance exposures to the detector. The range of exposures to the detector in clinical studies was found for the three modes of operation: fluoroscopic mode, high frame-rate digital angiographic mode (HD fluoroscopic mode), and DSA mode. Using these estimated detector exposure ranges and available CMOS detector technical specifications, design requirements were developed to pursue a quantum limited, high resolution, dynamic x-ray detector based on a CMOS sensor with 50 μm pixel size. For the proposed MAF-CMOS, the estimated charge collected within the full exposure range was found to be within the estimated full well capacity of the pixels. Expected instrumentation noise for the proposed detector was estimated to be 50-1,300 electrons. Adding a gain stage such as a light image intensifier would minimize the effect of the estimated instrumentation noise on total image noise but may not be necessary to ensure quantum limited detector operation at low exposure levels. A recursive temporal filter may decrease the effective total noise by 2 to 3 times, allowing for the improved signal to noise ratios at the lowest estimated exposures despite consequent loss in temporal resolution. This work can serve as a guide for further development of dynamic x-ray imaging prototypes or improvements for existing dynamic x-ray imaging systems.

  18. Standard guide for digital detector array radiology

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This standard is a user guide, which is intended to serve as a tutorial for selection and use of various digital detector array systems nominally composed of the detector array and an imaging system to perform digital radiography. This guide also serves as an in-detail reference for the following standards: Practices E2597, , and E2737. 1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  19. Novel Hybrid CMOS X-ray Detector Developments for Future Large Area and High Resolution X-ray Astronomy Missions

    Science.gov (United States)

    Falcone, Abe

    In the coming years, X-ray astronomy will require new soft X-ray detectors that can be read very quickly with low noise and can achieve small pixel sizes over a moderately large focal plane area. These requirements will be present for a variety of X-ray missions that will attempt to address science that was highly ranked by the 2010 Decadal Survey, including missions with science that overlaps with that of IXO and Athena, as well as other missions addressing science topics beyond those of IXO and Athena. An X-ray Surveyor mission was recently chosen by NASA for study by a Science & Technology Definition Team (STDT) so it can be considered as an option for an upcom-ing flagship mission. A mission such as this was endorsed by the NASA long term planning document entitled "Enduring Quests, Daring Visions," and a detailed description of one possible reali-zation of such a mission has been referred to as SMART-X, which was described in a recent NASA RFI response. This provides an example of a future mission concept with these requirements since it has high X-ray throughput and excellent spatial resolution. We propose to continue to modify current active pixel sensor designs, in particular the hybrid CMOS detectors that we have been working with for several years, and implement new in-pixel technologies that will allow us to achieve these ambitious and realistic requirements on a timeline that will make them available to upcoming X-ray missions. This proposal is a continuation of our program that has been work-ing on these developments for the past several years. The first 3 years of the program led to the development of a new circuit design for each pixel, which has now been shown to be suitable for a larger detector array. The proposed activity for the next four years will be to incorporate this pixel design into a new design of a full detector array (2k×2k pixels with digital output) and to fabricate this full-sized device so it can be thoroughly tested and

  20. Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Z., E-mail: zhijun.liang@cern.ch [University of California Santa Cruz, Santa Cruz Institute for Particle Physics (SCIPP) (United States); Institute of High Energy Physics, Beijing (China); Affolder, A. [University of Liverpool (United Kingdom); Arndt, K. [University of Oxford (United Kingdom); Bates, R. [SUPA – School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Benoit, M.; Di Bello, F. [University of Geneva (Switzerland); Blue, A. [SUPA – School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Bortoletto, D. [University of Oxford (United Kingdom); Buckland, M. [University of Liverpool (United Kingdom); CERN, European Center for Nuclear Research (Switzerland); Buttar, C. [SUPA – School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Caragiulo, P. [SLAC National Accelerator Laboratory (United States); Das, D.; Dopke, J. [Rutherford Appleton Laboratory, Didcot (United Kingdom); Dragone, A. [SLAC National Accelerator Laboratory (United States); Ehrler, F. [Karlsruhe Institute of Technology (Germany); Fadeyev, V.; Galloway, Z.; Grabas, H. [University of California Santa Cruz, Santa Cruz Institute for Particle Physics (SCIPP) (United States); Gregor, I.M. [Deutsches Elektronen-Synchrotron (Germany); Grenier, P. [SLAC National Accelerator Laboratory (United States); and others

    2016-09-21

    This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for the CMOS sensor is 10 times lower than for a conventional planar sensor, it is crucial to integrate a low noise built-in amplifier on the sensor chip to improve the signal to noise ratio of the system. As part of the investigation for the ATLAS strip detector upgrade, a test chip that comprises several pixel arrays with different geometries, as well as standalone built-in amplifiers and built-in amplifiers in pixel arrays has been fabricated in a 0.35 μm high-voltage CMOS process. Measurements of the gain and the noise of both the standalone amplifiers and built-in amplifiers in pixel arrays were performed before and after gamma radiation of up to 60 Mrad. Of special interest is the variation of the noise as a function of the sensor capacitance. We optimized the configuration of the amplifier for a fast rise time to adapt to the LHC bunch crossing period of 25 ns, and measured the timing characteristics including jitter. Our results indicate an adequate amplifier performance for monolithic structures used in HV-CMOS technology. The results have been incorporated in the next submission of a large-structure chip.

  1. Silicon-CsI detector array for heavy-ion reactions

    CERN Document Server

    Norbeck, E; Pogodin, P I; Cheng, Y W; Ingram, F D; Bjarki, O; Grévy, S; Magestro, D J; Molen, A M V; Westfall, G D

    2000-01-01

    An array of 60 silicon-CsI(Tl) detector telescopes has been developed along with associated electronics. The close packing of the telescopes required novel designs for the photodiodes and the silicon DELTA E detectors. Newly developed electronics include preamplifiers, shaping amplifiers, test pulse circuitry, and a module to monitor leakage currents in the silicon diodes. The array covers angles from 5 deg. to 18 deg. in the 4 pi Array at the National Superconducting Cyclotron Laboratory at Michigan State University. It measures protons to 150 MeV and has isotopic resolution for intermediate mass nuclei.

  2. Muon Detector R&D in Telescope Array Experiment

    Science.gov (United States)

    Nonaka, T.; Takamura, M.; Honda, K.; Matthews, J. N.; Ogio, S.; Sakurai, N.; Sagawa, H.; Stokes, B. T.; Tsujimoto, M.; Yashiro, K.

    The Telescope Array (TA) experiment, located in the western desert of Utah, U.S.A., at 39.38° north and 112.9° west, is collecting data of ultra high energy cosmic rays in the energy range 1018-1020 eV. The experiment has a Surface Detector (SD) array surrounded by three Fluorescence Detector (FD) stations to enable simultaneous detection of shower particles and fluorescence photons generated by the extensive air shower. Measurement of shower particles at the ground level, with different absorber thickness, enables a more detailed studies of the experiment's energy scale and of hadron interaction models. In this report, we present a design and the first observation result of a surface muon detector using lead plates and concrete as absorbers.

  3. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    Science.gov (United States)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  4. A Standard CMOS Humidity Sensor without Post-Processing

    OpenAIRE

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

  5. Development of Single-Event Upset hardened programmable logic devices in deep submicron CMOS

    International Nuclear Information System (INIS)

    Bonacini, S.

    2007-11-01

    The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust (Single Event Upset) programmable components for application in high energy physics experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 μm CMOS technology. The FPGA under development is a 32*32 logic block array, equivalent to ∼ 25 k gates, in 0.13 μm CMOS. The irradiation test results obtained in the CMOS 0.25 μm technology demonstrate good robustness of the circuit up to an LET (Linear Energy Transfer) of 79.6 cm 2 *MeV/mg, which make it suitable for the target environment. The CMOS 0.13 μm circuit has showed robustness to an LET of 37.4 cm 2 *MeV/mg in the static test mode and has increased sensitivity in the dynamic test mode. This work focused also on the research for an SEU-robust register in both the mentioned technologies. The SEU-robust register is employed as a user data flip-flop in the FPGA and PLD designs and as a configuration cell as well in the FPGA design

  6. Signal Attenuation Curve for Different Surface Detector Arrays

    Science.gov (United States)

    Vicha, J.; Travnicek, P.; Nosek, D.; Ebr, J.

    2014-06-01

    Modern cosmic ray experiments consisting of large array of particle detectors measure the signals of electromagnetic or muon components or their combination. The correction for an amount of atmosphere passed is applied to the surface detector signal before its conversion to the shower energy. Either Monte Carlo based approach assuming certain composition of primaries or indirect estimation using real data and assuming isotropy of arrival directions can be used. Toy surface arrays of different sensitivities to electromagnetic and muon components are assumed in MC simulations to study effects imposed on attenuation curves for varying composition or possible high energy anisotropy. The possible sensitivity of the attenuation curve to the mass composition is also tested for different array types focusing on a future apparatus that can separate muon and electromagnetic component signals.

  7. Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector

    International Nuclear Information System (INIS)

    Wembe Tafo Evariste; Su Hong; Qian Yi; Kong Jie; Wang Tongxi

    2010-01-01

    The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip, Si (Li), CdZnTe and CsI detectors, etc., which can be further integrated the whole system and adopted to develop CMOS-based application, specific integrated circuit for Front End Electronics (FEE) of read-out system of nuclear physics, particle physics and astrophysics research, etc. It's why we used only CMOS transistor to develop the entire system. A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC 4 filter, we perform shaping time in the range, 465 ns to 2.76μs with a low output resistance and the linearity almost good. (authors)

  8. Array of germanium detectors for nuclear safeguards

    International Nuclear Information System (INIS)

    Moss, C.E.; Bernard, W.; Dowdy, E.J.; Garcia, C.; Lucas, M.C.; Pratt, J.C.

    1983-01-01

    Our gamma-ray spectrometer system, designed for field use, offers high efficiency and high resolution for safeguards applications. The system consists of three 40% high-purity germanium detectors and a LeCroy 3500 data-acquisition system that calculates a composite spectrum for the three detectors. The LeCroy 3500 mainframe can be operated remotely from the detector array with control exercised through moderns and the telephone system. System performance with a mixed source of 125 Sb, 154 Eu, and 155 Eu confirms the expected efficiency of 120% with an overall resolution that is between the resolution of the best detector and that of the worst

  9. MTF measurement and analysis of linear array HgCdTe infrared detectors

    Science.gov (United States)

    Zhang, Tong; Lin, Chun; Chen, Honglei; Sun, Changhong; Lin, Jiamu; Wang, Xi

    2018-01-01

    The slanted-edge technique is the main method for measurement detectors MTF, however this method is commonly used on planar array detectors. In this paper the authors present a modified slanted-edge method to measure the MTF of linear array HgCdTe detectors. Crosstalk is one of the major factors that degrade the MTF value of such an infrared detector. This paper presents an ion implantation guard-ring structure which was designed to effectively absorb photo-carriers that may laterally defuse between adjacent pixels thereby suppressing crosstalk. Measurement and analysis of the MTF of the linear array detectors with and without a guard-ring were carried out. The experimental results indicated that the ion implantation guard-ring structure effectively suppresses crosstalk and increases MTF value.

  10. Assembly, characterization, and operation of large-scale TES detector arrays for ACTPol

    Science.gov (United States)

    Pappas, Christine Goodwin

    2016-01-01

    The Polarization-sensitive Receiver for the Atacama Cosmology Telescope (ACTPol) is designed to measure the Cosmic Microwave Background (CMB) temperature and polarization anisotropies on small angular scales. Measurements of the CMB temperature and polarization anisotropies have produced arguably the most important cosmological data to date, establishing the LambdaCDM model and providing the best constraints on most of its parameters. To detect the very small fluctuations in the CMB signal across the sky, ACTPol uses feedhorn-coupled Transition-Edge Sensor (TES) detectors. A TES is a superconducting thin film operated in the transition region between the superconducting and normal states, where it functions as a highly sensitive resistive thermometer. In this thesis, aspects of the assembly, characterization, and in-field operation of the ACTPol TES detector arrays are discussed. First, a novel microfabrication process for producing high-density superconducting aluminum/polyimide flexible circuitry (flex) designed to connect large-scale detector arrays to the first stage of readout is presented. The flex is used in parts of the third ACTPol array and is currently being produced for use in the AdvACT detector arrays, which will begin to replace the ACTPol arrays in 2016. Next, we describe methods and results for the in-lab and on-telescope characterization of the detectors in the third ACTPol array. Finally, we describe the ACTPol TES R(T,I) transition shapes and how they affect the detector calibration and operation. Methods for measuring the exact detector calibration and re-biasing functions, taking into account the R(T,I) transition shape, are presented.

  11. CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

    Science.gov (United States)

    Rimoldi, M.

    2017-12-01

    The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detectors based on CMOS technology. Such detectors can provide charge collection, analog amplification and digital processing in the same silicon wafer. The radiation hardness is improved thanks to multiple nested wells which give the embedded CMOS electronics sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC . A number of alternative solutions have been explored and characterised. In this document, test results of the sensors fabricated in different CMOS processes are reported.

  12. Cone beam breast CT with a high pitch (75 μm), thick (500 μm) scintillator CMOS flat panel detector: visibility of simulated microcalcifications.

    Science.gov (United States)

    Shen, Youtao; Zhong, Yuncheng; Lai, Chao-Jen; Wang, Tianpeng; Shaw, Chris C

    2013-10-01

    To measure and investigate the improvement of microcalcification (MC) visibility in cone beam breast CT with a high pitch (75 μm), thick (500 μm) scintillator CMOS/CsI flat panel detector (Dexela 2923, Perkin Elmer). Aluminum wires and calcium carbonate grains of various sizes were embedded in a paraffin cylinder to simulate imaging of calcifications in a breast. Phantoms were imaged with a benchtop experimental cone beam CT system at various exposure levels. In addition to the Dexela detector, a high pitch (50 μm), thin (150 μm) scintillator CMOS/CsI flat panel detector (C7921CA-09, Hamamatsu Corporation, Hamamatsu City, Japan) and a widely used low pitch (194 μm), thick (600 μm) scintillator aSi/CsI flat panel detector (PaxScan 4030CB, Varian Medical Systems) were also used in scanning for comparison. The images were independently reviewed by six readers (imaging physicists). The MC visibility was quantified as the fraction of visible MCs and measured as a function of the estimated mean glandular dose (MGD) level for various MC sizes and detectors. The modulation transfer functions (MTFs) and detective quantum efficiencies (DQEs) were also measured and compared for the three detectors used. The authors have demonstrated that the use of a high pitch (75 μm) CMOS detector coupled with a thick (500 μm) CsI scintillator helped make the smaller 150-160, 160-180, and 180-200 μm MC groups more visible at MGDs up to 10.8, 9, and 10.8 mGy, respectively. It also made the larger 200-212 and 212-224 μm MC groups more visible at MGDs up to 7.2 mGy. No performance improvement was observed for 224-250 μm or larger size groups. With the higher spatial resolution of the Dexela detector based system, the apparent dimensions and shapes of MCs were more accurately rendered. The results show that with the aforementioned detector, a 73% visibility could be achieved in imaging 160-180 μm MCs as compared to 28% visibility achieved by the low pitch (194 μm) aSi/CsI flat

  13. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  14. Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems.

    Science.gov (United States)

    Dey, Samrat; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

    2012-01-01

    Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs).

  15. CMOS detectors: lessons learned during the STC stereo channel preflight calibration

    Science.gov (United States)

    Simioni, E.; De Sio, A.; Da Deppo, V.; Naletto, G.; Cremonese, G.

    2017-09-01

    The Stereo Camera (STC), mounted on-board the BepiColombo spacecraft, will acquire in push frame stereo mode the entire surface of Mercury. STC will provide the images for the global three-dimensional reconstruction of the surface of the innermost planet of the Solar System. The launch of BepiColombo is foreseen in 2018. STC has an innovative optical system configuration, which allows good optical performances with a mass and volume reduction of a factor two with respect to classical stereo camera approach. In such a telescope, two different optical paths inclined of +/-20°, with respect to the nadir direction, are merged together in a unique off axis path and focused on a single detector. The focal plane is equipped with a 2k x 2k hybrid Si-PIN detector, based on CMOS technology, combining low read-out noise, high radiation hardness, compactness, lack of parasitic light, capability of snapshot image acquisition and short exposure times (less than 1 ms) and small pixel size (10 μm). During the preflight calibration campaign of STC, some detector spurious effects have been noticed. Analyzing the images taken during the calibration phase, two different signals affecting the background level have been measured. These signals can reduce the detector dynamics down to a factor of 1/4th and they are not due to dark current, stray light or similar effects. In this work we will describe all the features of these unwilled effects, and the calibration procedures we developed to analyze them.

  16. Pixel readout chips in deep submicron CMOS for ALICE and LHCb tolerant to 10 Mrad and beyond

    International Nuclear Information System (INIS)

    Snoeys, W.; Burns, M.; Campbell, M.; Cantatore, E.; Cencelli, V.; Dinapoli, R.; Heijne, E.; Jarron, P.; Lamanna, P.; Minervini, D.; Morel, M.; O'Shea, V.; Quiquempoix, V.; Bello, D.S.S.D.San Segundo; Van Koningsveld, B.; Wyllie, K.

    2001-01-01

    The ALICE1LHCB chip is a mixed-mode integrated circuit designed to read out silicon pixel detectors for two different applications: particle tracking in the ALICE Silicon Pixel Detector and particle identification in the LHCb Ring Imaging Cherenkov detector. To satisfy the different needs for these two experiments, the chip can be operated in two different modes. In tracking mode all the 50 μmx425 μm pixel cells in the 256x32 array are read out individually, whilst in particle identification mode they are combined in groups of 8 to form a 32x32 array of 400 μmx425 μm cells. Radiation tolerance was enhanced through special circuit layout. Sensitivity to coupling of digital signals into the analog front end was minimized. System issues such as testability and uniformity further constrained the design. The circuit is currently being manufactured in a commercial 0.25 μm CMOS technology

  17. HgCdTe e-avalanche photodiode detector arrays

    Directory of Open Access Journals (Sweden)

    Anand Singh

    2015-08-01

    Full Text Available Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.

  18. Image scanning microscopy using a SPAD detector array (Conference Presentation)

    Science.gov (United States)

    Castello, Marco; Tortarolo, Giorgio; Buttafava, Mauro; Tosi, Alberto; Sheppard, Colin J. R.; Diaspro, Alberto; Vicidomini, Giuseppe

    2017-02-01

    The use of an array of detectors can help overcoming the traditional limitation of confocal microscopy: the compromise between signal and theoretical resolution. Each element independently records a view of the sample and the final image can be reconstructed by pixel reassignment or by inverse filtering (e.g. deconvolution). In this work, we used a SPAD array of 25 detectors specifically designed for this goal and our scanning microscopy control system (Carma) to acquire the partial images and to perform online image processing. Further work will be devoted to optimize the image reconstruction step and to improve the fill-factor of the detector.

  19. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

    Science.gov (United States)

    Yuryev, Vladimir A; Arapkina, Larisa V

    2011-09-05

    Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

  20. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001 surface: nucleation, morphology, and CMOS compatibility

    Directory of Open Access Journals (Sweden)

    Yuryev Vladimir

    2011-01-01

    Full Text Available Abstract Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001 surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C and high (≳600°C temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001 surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001 quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

  1. Proof of principle study of the use of a CMOS active pixel sensor for proton radiography.

    Science.gov (United States)

    Seco, Joao; Depauw, Nicolas

    2011-02-01

    Proof of principle study of the use of a CMOS active pixel sensor (APS) in producing proton radiographic images using the proton beam at the Massachusetts General Hospital (MGH). A CMOS APS, previously tested for use in s-ray radiation therapy applications, was used for proton beam radiographic imaging at the MGH. Two different setups were used as a proof of principle that CMOS can be used as proton imaging device: (i) a pen with two metal screws to assess spatial resolution of the CMOS and (ii) a phantom with lung tissue, bone tissue, and water to assess tissue contrast of the CMOS. The sensor was then traversed by a double scattered monoenergetic proton beam at 117 MeV, and the energy deposition inside the detector was recorded to assess its energy response. Conventional x-ray images with similar setup at voltages of 70 kVp and proton images using commercial Gafchromic EBT 2 and Kodak X-Omat V films were also taken for comparison purposes. Images were successfully acquired and compared to x-ray kVp and proton EBT2/X-Omat film images. The spatial resolution of the CMOS detector image is subjectively comparable to the EBT2 and Kodak X-Omat V film images obtained at the same object-detector distance. X-rays have apparent higher spatial resolution than the CMOS. However, further studies with different commercial films using proton beam irradiation demonstrate that the distance of the detector to the object is important to the amount of proton scatter contributing to the proton image. Proton images obtained with films at different distances from the source indicate that proton scatter significantly affects the CMOS image quality. Proton radiographic images were successfully acquired at MGH using a CMOS active pixel sensor detector. The CMOS demonstrated spatial resolution subjectively comparable to films at the same object-detector distance. Further work will be done in order to establish the spatial and energy resolution of the CMOS detector for protons. The

  2. Conference on physics from large {gamma}-ray detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    The conference on {open_quotes}Physics from Large {gamma}-ray Detector Arrays{close_quotes} is a continuation of the series of conferences that have been organized every two years by the North American Heavy-ion Laboratories. The aim of the conference this year was to encourage discussion of the physics that can be studied with such large arrays. This volume is the collected proceedings from this conference. It discusses properties of nuclear states which can be created in heavy-ion reactions, and which can be observed via such detector systems.

  3. National Array of Neutron Detectors (NAND): A versatile tool for nuclear reaction studies

    Energy Technology Data Exchange (ETDEWEB)

    Golda, K.S., E-mail: goldaks@gmail.com [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Jhingan, A.; Sugathan, P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Singh, Hardev [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Singh, R.P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Behera, B.R. [Department of Physics, Panjab University, Chandigarh 160014 (India); Mandal, S. [Department of Physics and Astrophysics, Delhi University, New Delhi 110007 (India); Kothari, A.; Gupta, Arti; Zacharias, J.; Archunan, M.; Barua, P.; Venkataramanan, S.; Bhowmik, R.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Govil, I.M. [Department of Physics, Panjab University, Chandigarh 160014 (India); Datta, S.K.; Chatterjee, M.B. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2014-11-01

    The first phase of the National Array of Neutron Detectors (NAND) consisting of 26 neutron detectors has been commissioned at the Inter University Accelerator Centre (IUAC), New Delhi. The motivation behind setting up of such a detector system is the need for more accurate and efficient study of reaction mechanisms in the projectile energy range of 5–8 MeV/n using heavy ion beams from a 15 UD Pelletron and an upgraded LINAC booster facility at IUAC. The above detector array can be used for inclusive as well as exclusive measurements of reaction products of which at least one product is a neutron. While inclusive measurements can be made using only the neutron detectors along with the time of flight technique and a pulsed beam, exclusive measurements can be performed by detecting neutrons in coincidence with charged particles and/or fission fragments detected with ancillary detectors. The array can also be used for neutron tagged gamma-ray spectroscopy in (HI, xn) reactions by detecting gamma-rays in coincidence with the neutrons in a compact geometrical configuration. The various features and the performance of the different aspects of the array are described in the present paper. -- Highlights: •We report the design, fabrication and installation of a 26 element modular neutron detection system (NAND). •The array has been designed for the fusion–fission studies at near and above the barrier energies. •The relevant characteristics of the array are studied exhaustively and reported. •The efficiency of the detectors are measured and compared with the monte carlo simulations. •The second phase of the array will be augmented with 80 more neutron detectors which will enable the system to measure the neutron multiplicity distribution.

  4. National Array of Neutron Detectors (NAND): A versatile tool for nuclear reaction studies

    International Nuclear Information System (INIS)

    Golda, K.S.; Jhingan, A.; Sugathan, P.; Singh, Hardev; Singh, R.P.; Behera, B.R.; Mandal, S.; Kothari, A.; Gupta, Arti; Zacharias, J.; Archunan, M.; Barua, P.; Venkataramanan, S.; Bhowmik, R.K.; Govil, I.M.; Datta, S.K.; Chatterjee, M.B.

    2014-01-01

    The first phase of the National Array of Neutron Detectors (NAND) consisting of 26 neutron detectors has been commissioned at the Inter University Accelerator Centre (IUAC), New Delhi. The motivation behind setting up of such a detector system is the need for more accurate and efficient study of reaction mechanisms in the projectile energy range of 5–8 MeV/n using heavy ion beams from a 15 UD Pelletron and an upgraded LINAC booster facility at IUAC. The above detector array can be used for inclusive as well as exclusive measurements of reaction products of which at least one product is a neutron. While inclusive measurements can be made using only the neutron detectors along with the time of flight technique and a pulsed beam, exclusive measurements can be performed by detecting neutrons in coincidence with charged particles and/or fission fragments detected with ancillary detectors. The array can also be used for neutron tagged gamma-ray spectroscopy in (HI, xn) reactions by detecting gamma-rays in coincidence with the neutrons in a compact geometrical configuration. The various features and the performance of the different aspects of the array are described in the present paper. -- Highlights: •We report the design, fabrication and installation of a 26 element modular neutron detection system (NAND). •The array has been designed for the fusion–fission studies at near and above the barrier energies. •The relevant characteristics of the array are studied exhaustively and reported. •The efficiency of the detectors are measured and compared with the monte carlo simulations. •The second phase of the array will be augmented with 80 more neutron detectors which will enable the system to measure the neutron multiplicity distribution

  5. Development of a fast pixel array detector for use in microsecond time-resolved x-ray diffraction

    International Nuclear Information System (INIS)

    Barna, S.L.; Gruner, S.M.; Shepherd, J.A.

    1995-01-01

    A large-area pixel x-ray detector is being developed to collect eight successive frames of wide dynamic range two-dimensional images at 200kHz rates. Such a detector, in conjunction with a synchrotron radiation x-ray source, will enable time-resolved x-ray studies of proteins and other materials on time scales which have previously been inaccessible. The detector will consist of an array of fully-depleted 150 micron square diodes connected to a CMOS integrated electronics layer with solder bump-bonding. During each framing period, the current resulting from the x-rays stopped in the diodes is integrated in the electronics layer, and then stored in one of eight storage capacitors underneath the pixel. After the last frame, the capacitors are read out at standard data transmission rates. The detector has been designed for a well-depth of at least 10,000 x-rays (at 20keV), and a noise level of one x-ray. Ultimately, the authors intend to construct a detector with over one million pixels (1024 by 1024). They present the results of their development effort and various features of the design. The electronics design is discussed, with special attention to the performance requirements. The choice and design of the detective diodes, as they relate to x-ray stopping power and charge collection, are presented. An analysis of various methods of bump bonding is also presented. Finally, the authors discuss the possible need for a radiation-blocking layer, to be placed between the electronics and the detective layer, and various methods they have pursued in the construction of such a layer

  6. Développement de circuits logiques programmables résistants aux alas logiques en technologie CMOS submicrométrique

    CERN Document Server

    Bonacini, Sandro; Kloukinas, Kostas

    2007-01-01

    The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Most of the microelectronics components developed for the first generation of LHC experiments have been designed with very precise experiment-specific goals and are hardly adaptable to other applications. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust programmable components for application in High Energy Physics (HEP) experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 micron CMOS technology. The FPGA under development is instead a 32x32 logic block array, equivalent to ~25k gates, in 0.13 micron CMOS. This wor...

  7. A 65 nm CMOS analog processor with zero dead time for future pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gaioni, L., E-mail: luigi.gaioni@unibg.it [Università di Bergamo, I-24044 Dalmine (Italy); INFN, Sezione di Pavia, I-27100 Pavia (Italy); Braga, D.; Christian, D.C.; Deptuch, G.; Fahim, F. [Fermi National Accelerator Laboratory, Batavia IL (United States); Nodari, B. [Università di Bergamo, I-24044 Dalmine (Italy); INFN, Sezione di Pavia, I-27100 Pavia (Italy); Centre National de Recherche Scientifique, APC/IN2P3, Paris (France); Ratti, L. [Università di Pavia, I-27100 Pavia (Italy); INFN, Sezione di Pavia, I-27100 Pavia (Italy); Re, V. [Università di Bergamo, I-24044 Dalmine (Italy); INFN, Sezione di Pavia, I-27100 Pavia (Italy); Zimmerman, T. [Fermi National Accelerator Laboratory, Batavia IL (United States)

    2017-02-11

    Next generation pixel chips at the High-Luminosity (HL) LHC will be exposed to extremely high levels of radiation and particle rates. In the so-called Phase II upgrade, ATLAS and CMS will need a completely new tracker detector, complying with the very demanding operating conditions and the delivered luminosity (up to 5×10{sup 34} cm{sup −2} s{sup −1} in the next decade). This work is concerned with the design of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier featuring a detector leakage compensation circuit, and a compact, single ended comparator that guarantees very good performance in terms of channel-to-channel dispersion of threshold without needing any pixel-level trimming. A flash ADC is exploited for digital conversion immediately after the charge amplifier. A thorough discussion on the design of the charge amplifier and the comparator is provided along with an exhaustive set of simulation results.

  8. Fast CMOS binary front-end for silicon strip detectors at LHC experiments

    CERN Document Server

    Kaplon, Jan

    2004-01-01

    We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance preamplifier working with an active feedback loop, two stages of the amplifier-integrator circuits providing 22 ns peaking time and two-stage differential discriminator. Particular effort has been made to minimize the current and the power consumption of the preamplifier, while keeping the required noise and timing performance. For a detector capacitance of 20 pF noise below 1500 e/sup -/ ENC has been achieved for 300 mu A bias current in the input transistor, which is comparable with levels achieved in the past for a front-end using bipolar input transistor. The total supply current of the front-end is 600 mu A and the power dissipation is 1.5 mW per channel. The offset spread of the comparator is below 3 mV rms.

  9. Isotropic gates and large gamma detector arrays versus angular distributions

    International Nuclear Information System (INIS)

    Iacob, V.E.; Duchene, G.

    1997-01-01

    Angular information extracted from in-beam γ ray measurements are of great importance for γ ray multipolarity and nuclear spin assignments. In our days large Ge detector arrays became available allowing the measurements of extremely weak γ rays in almost 4π sr solid angle (e.g., EUROGAM detector array). Given the high detector efficiency it is common for the mean suppressed coincidence multiplicity to reach values as high as 4 to 6. Thus, it is possible to gate on particular γ rays in order to enhance the relative statistics of a definite reaction channel and/or a definite decaying path in the level scheme of the selected residual nucleus. As compared to angular correlations, the conditioned angular distribution spectra exhibit larger statistics because in the latter the gate-setting γ ray may be observed by all the detectors in the array, relaxing somehow the geometrical restrictions of the angular correlations. Since the in-beam γ ray emission is anisotropic one could inquire that gate setting as mentioned above, based on anisotropic γ ray which would perturb the angular distributions in the unfolded events. As our work proved, there is no reason to worry about this if the energy gate runs over the whole solid angle in an ideal 4π sr detector, i.e., if the gate is isotropic. In real quasi 4π sr detector arrays the corresponding quasi isotropic gate preserves the angular properties of the unfolded data, too. However extraction of precise angular distribution coefficient especially a 4 , requires the consideration of the deviation of the quasi isotropic gate relative to the (ideal) isotropic gate

  10. A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

    Directory of Open Access Journals (Sweden)

    Cheng-Chun Wu

    2016-10-01

    Full Text Available An electronic nose (E-Nose is one of the applications for surface acoustic wave (SAW sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS readout application-specific integrated circuit (ASIC based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

  11. Radiation hardness of CMOS monolithic active pixel sensors manufactured in a 0.18 μm CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Linnik, Benjamin [Goethe-Universitaet Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

    2015-07-01

    CMOS Monolithic Active Pixels Sensors (MAPS) are considered as the technology of choice for various vertex detectors in particle and heavy-ion physics including the STAR HFT, the upgrade of the ALICE ITS, the future ILC detectors and the CBM experiment at FAIR. To match the requirements of those detectors, their hardness to radiation is being improved, among others in a joined research activity of the Goethe University Frankfurt and the IPHC Strasbourg. It was assumed that combining an improved high resistivity (1-8 kΩcm) sensitive medium with the features of a 0.18 μm CMOS process, is suited to reach substantial improvements in terms of radiation hardness as compared to earlier sensor designs. This strategy was tested with a novel generation of sensor prototypes named MIMOSA-32 and MIMOSA-34. We show results on the radiation hardness of those sensors and discuss its impact on the design of future vertex detectors.

  12. Subpixel mapping and test beam studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS inner detector upgrade

    Science.gov (United States)

    Bisanz, T.; Große-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.

    2017-08-01

    The upgrade to the High Luminosity Large Hadron Collider will increase the instantaneous luminosity by more than a factor of 5, thus creating significant challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives to the well-established hybrid design using passive sensors since they allow for smaller pixel sizes and cost effective production. This article presents studies of a high-voltage CMOS active pixel sensor designed for the ATLAS tracker upgrade. The sensor is glued to the read-out chip of the Insertable B-Layer, forming a capacitively coupled pixel detector. The pixel pitch of the device under test is 33× 125 μm2, while the pixels of the read-out chip have a pitch of 50× 250 μm2. Three pixels of the CMOS device are connected to one read-out pixel, the information of which of these subpixels is hit is encoded in the amplitude of the output signal (subpixel encoding). Test beam measurements are presented that demonstrate the usability of this subpixel encoding scheme.

  13. High resolution imaging detectors and applications

    CERN Document Server

    Saha, Swapan K

    2015-01-01

    Interferometric observations need snapshots of very high time resolution of the order of (i) frame integration of about 100 Hz or (ii) photon-recording rates of several megahertz (MHz). Detectors play a key role in astronomical observations, and since the explanation of the photoelectric effect by Albert Einstein, the technology has evolved rather fast. The present-day technology has made it possible to develop large-format complementary metal oxide–semiconductor (CMOS) and charge-coupled device (CCD) array mosaics, orthogonal transfer CCDs, electron-multiplication CCDs, electron-avalanche photodiode arrays, and quantum-well infrared (IR) photon detectors. The requirements to develop artifact-free photon shot noise-limited images are higher sensitivity and quantum efficiency, reduced noise that includes dark current, read-out and amplifier noise, smaller point-spread functions, and higher spectral bandwidth. This book aims to address such systems, technologies and design, evaluation and calibration, control...

  14. A 90 element CdTe array detector

    Energy Technology Data Exchange (ETDEWEB)

    Iwase, Y.; Onozuka, A.; Ohmori, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Electronic Material and Components Labs.); Funaki, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Materials Development Research Labs.)

    1992-11-15

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 [mu]s, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV [gamma]-rays. (orig.).

  15. A 90 element CdTe array detector

    Science.gov (United States)

    Iwase, Y.; Funaki, M.; Onozuka, A.; Ohmori, M.

    1992-11-01

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 μs, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV γ-rays.

  16. National array of neutron detectors (NAND) a versatile setup for studies on reaction dynamics

    International Nuclear Information System (INIS)

    Golda, K.S.; Singh, R.P.; Zacharias, J.; Archunan, M.; Kothari, A.; Barua, P.; Gupta, Arti; Venkataramanan, S.; Suman, S.K.; Kumar, Rajesh; Kumar, Pankaj; Jhingan, A.; Sugathan, P.; Datta, S.K.; Chatterjee, Mihir; Bhowmik, R.K.; Singh, Hardev; Behera, B.; Kumar, A.; Singh, G.; Ranjit; Mandal, S.

    2006-01-01

    National Array of Neutron Detectors (NAND) is a large array of neutron detectors being setup at Inter University Accelerator Centre. The primary motive behind the development of this array, is the study of reaction dynamics in the energy domain near the Coulomb barrier

  17. Scintillator detector array

    International Nuclear Information System (INIS)

    Cusano, D.A.; Dibianca, F.A.

    1981-01-01

    This patent application relates to a scintillator detector array for use in computerized tomography and comprises a housing including a plurality of chambers, the said housing having a front wall transmissive to x-rays and side walls opaque to x-rays, such as of tungsten and tantalum, a liquid scintillation medium including a soluble fluor, the solvent for the fluor being disposed in the chambers. The solvent comprises either an intrinsically high Z solvent or a solvent which has dissolved therein a high Z compound e.g. iodo or bromonaphthalene; or toluene, xylene or trimethylbenzene with a lead or tin alkyl dissolved therein. Also disposed about the chambers are a plurality of photoelectric devices. (author)

  18. MOS solid-state detector arrays for x-ray imaging

    International Nuclear Information System (INIS)

    Koppel, L.N.

    1977-01-01

    Two types of MOS detector arrays were used to sense directly patterns of soft x-rays, in the Lawrence Livermore Laboratory experimental laser-fusion program. A linear self-scanning photodiode array (SSPA) is used in a wave-length-dispersive spectrometer. A frame transfer charge-coupled device (CCD) facilitates the use of an x-ray microscope. Measurements and calculations of the x-ray sensitivity of these devices are presented. Their linearity and dynamic range are discussed, as well as data recovery systems for each detector. Experiences in using these devices to detect pulses of x-rays in laser-fusion experiments are described

  19. Development of radiation hard CMOS active pixel sensors for HL-LHC

    International Nuclear Information System (INIS)

    Pernegger, Heinz

    2016-01-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  20. Modeling an array of encapsulated germanium detectors

    International Nuclear Information System (INIS)

    Kshetri, R

    2012-01-01

    A probability model has been presented for understanding the operation of an array of encapsulated germanium detectors generally known as composite detector. The addback mode of operation of a composite detector has been described considering the absorption and scattering of γ-rays. Considering up to triple detector hit events, we have obtained expressions for peak-to-total and peak-to-background ratios of the cluster detector, which consists of seven hexagonal closely packed encapsulated HPGe detectors. Results have been obtained for the miniball detectors comprising of three and four seven hexagonal closely packed encapsulated HPGe detectors. The formalism has been extended to the SPI spectrometer which is a telescope of the INTEGRAL satellite and consists of nineteen hexagonal closely packed encapsulated HPGe detectors. This spectrometer comprises of twelve detector modules surrounding the cluster detector. For comparison, we have considered a spectrometer comprising of nine detector modules surrounding the three detector configuration of miniball detector. In the present formalism, the operation of these sophisticated detectors could be described in terms of six probability amplitudes only. Using experimental data on relative efficiency and fold distribution of cluster detector as input, the fold distribution and the peak-to-total, peak-to-background ratios have been calculated for the SPI spectrometer and other composite detectors at 1332 keV. Remarkable agreement between experimental data and results from the present formalism has been observed for the SPI spectrometer.

  1. Self-calibrated humidity sensor in CMOS without post-processing.

    Science.gov (United States)

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2012-01-01

    A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

  2. Self-Calibrated Humidity Sensor in CMOS without Post-Processing

    OpenAIRE

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

  3. CMOS VLSI Active-Pixel Sensor for Tracking

    Science.gov (United States)

    Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

    2004-01-01

    An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

  4. A Fully Integrated Dual-Channel On-Coil CMOS Receiver for Array Coils in 1.5-10.5 T MRI.

    Science.gov (United States)

    Sporrer, Benjamin; Wu, Lianbo; Bettini, Luca; Vogt, Christian; Reber, Jonas; Marjanovic, Josip; Burger, Thomas; Brunner, David O; Pruessmann, Klaas P; Troster, Gerhard; Huang, Qiuting

    2017-12-01

    Magnetic resonance imaging (MRI) is among the most important medical imaging modalities. Coil arrays and receivers with high channel counts (16 and more) have to be deployed to obtain the image quality and acquisition speed required by modern clinical protocols. In this paper, we report the theoretical analysis, the system-level design, and the circuit implementation of the first receiver IC (RXIC) for clinical MRI fully integrated in a modern CMOS technology. The dual-channel RXIC sits directly on the sensor coil, thus eliminating any RF cable otherwise required to transport the information out of the magnetic field. The first stage LNA was implemented using a noise-canceling architecture providing a highly reflective input used to decouple the individual channels of the array. Digitization is performed directly on-chip at base-band by means of a delta-sigma modulator, allowing the subsequent optical transmission of data. The presented receiver, implemented in a CMOS technology, is compatible with MRI scanners up to . It reaches sub- noise figure for MRI units and features a dynamic range up to at a power consumption below per channel, with an area occupation of . Mounted on a small-sized printed circuit board (PCB), the receiver IC has been employed in a commercial MRI scanner to acquire in-vivo images matching the quality of traditional systems, demonstrating the first step toward multichannel wearable MRI array coils.

  5. National Array of Neutron Detectors (NAND): A versatile tool for nuclear reaction studies

    Science.gov (United States)

    Golda, K. S.; Jhingan, A.; Sugathan, P.; Singh, Hardev; Singh, R. P.; Behera, B. R.; Mandal, S.; Kothari, A.; Gupta, Arti; Zacharias, J.; Archunan, M.; Barua, P.; Venkataramanan, S.; Bhowmik, R. K.; Govil, I. M.; Datta, S. K.; Chatterjee, M. B.

    2014-11-01

    The first phase of the National Array of Neutron Detectors (NAND) consisting of 26 neutron detectors has been commissioned at the Inter University Accelerator Centre (IUAC), New Delhi. The motivation behind setting up of such a detector system is the need for more accurate and efficient study of reaction mechanisms in the projectile energy range of 5-8 MeV/n using heavy ion beams from a 15 UD Pelletron and an upgraded LINAC booster facility at IUAC. The above detector array can be used for inclusive as well as exclusive measurements of reaction products of which at least one product is a neutron. While inclusive measurements can be made using only the neutron detectors along with the time of flight technique and a pulsed beam, exclusive measurements can be performed by detecting neutrons in coincidence with charged particles and/or fission fragments detected with ancillary detectors. The array can also be used for neutron tagged gamma-ray spectroscopy in (HI, xn) reactions by detecting gamma-rays in coincidence with the neutrons in a compact geometrical configuration. The various features and the performance of the different aspects of the array are described in the present paper.

  6. Experimental measurement of a high resolution CMOS detector coupled to CsI scintillators under X-ray radiation

    International Nuclear Information System (INIS)

    Michail, C.; Valais, I.; Seferis, I.; Kalyvas, N.; Fountos, G.; Kandarakis, I.

    2015-01-01

    The purpose of the present study was to assess the information content of structured CsI:Tl scintillating screens, specially treated to be compatible to a CMOS digital imaging optical sensor, in terms of the information capacity (IC), based on Shannon's mathematical communication theory. IC was assessed after the experimental determination of the Modulation Transfer Function (MTF) and the Normalized Noise Power Spectrum (NNPS) in the mammography and general radiography energy range. The CMOS sensor was coupled to three columnar CsI:Tl scintillator screens obtained from the same manufacturer with thicknesses of 130, 140 and 170 μm respectively, which were placed in direct contact with the optical sensor. The MTF was measured using the slanted-edge method while NNPS was determined by 2D Fourier transforming of uniformly exposed images. Both parameters were assessed by irradiation under the mammographic W/Rh (130, 140 and 170 μm CsI screens) and the RQA-5 (140 and 170 μm CsI screens) (IEC 62220-1) beam qualities. The detector response function was linear for the exposure range under investigation. At 70 kVp, under the RQA-5 conditions IC values were found to range between 2229 and 2340 bits/mm 2 . At 28 kVp the corresponding IC values were found to range between 2262 and 2968 bits/mm 2 . The information content of CsI:Tl scintillating screens in combination to the high resolution CMOS sensor, investigated in the present study, where found optimized for use in digital mammography imaging systems. - Highlights: • Three structured CsI:Tl screens (130,140 & 170 um) were coupled to a CMOS sensor. • MTF of the CsI/CMOS was higher than GOS:Tb and CsI based digital imaging systems. • IC of CsI:Tl/CMOS was found optimized for use in digital mammography systems

  7. Ultrathin NbN film superconducting single-photon detector array

    International Nuclear Information System (INIS)

    Smirnov, K; Korneev, A; Minaeva, O; Divochiy, A; Tarkhov, M; Ryabchun, S; Seleznev, V; Kaurova, N; Voronov, B; Gol'tsman, G; Polonsky, S

    2007-01-01

    We report on the fabrication process of the 2 x 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes

  8. CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

    CERN Document Server

    Rimoldi, Marco; The ATLAS collaboration

    2017-01-01

    The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detector based on CMOS pixel techology. Such detectors provide charge collection, analog and digital amplification in the same silicon bulk. The radiation hardness is obtained with multiple nested wells that have embedded the CMOS electronics with sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC. A number of alternative solutions have been explored and characterised, and are presented in this document.

  9. Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

    Science.gov (United States)

    Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

    2018-01-01

    Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

  10. Design and Test of a 65nm CMOS Front-End with Zero Dead Time for Next Generation Pixel Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gaioni, L. [INFN, Pavia; Braga, D. [Fermilab; Christian, D. [Fermilab; Deptuch, G. [Fermilab; Fahim. F., Fahim. F. [Fermilab; Nodari, B. [Lyon, IPN; Ratti, L. [INFN, Pavia; Re, V. [INFN, Pavia; Zimmerman, T. [Fermilab

    2017-09-01

    This work is concerned with the experimental characterization of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier with detector leakage compensation circuit, and a compact, single ended comparator able to correctly process hits belonging to two consecutive bunch crossing periods. A 2-bit Flash ADC is exploited for digital conversion immediately after the preamplifier. A description of the circuits integrated in the front-end processor and the initial characterization results are provided

  11. A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

    Science.gov (United States)

    Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

    2016-07-01

    We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

  12. High-performance ferroelectric and magnetoresistive materials for next-generation thermal detector arrays

    Science.gov (United States)

    Todd, Michael A.; Donohue, Paul P.; Watton, Rex; Williams, Dennis J.; Anthony, Carl J.; Blamire, Mark G.

    2002-12-01

    This paper discusses the potential thermal imaging performance achievable from thermal detector arrays and concludes that the current generation of thin-film ferroelectric and resistance bolometer based detector arrays are limited by the detector materials used. It is proposed that the next generation of large uncooled focal plane arrays will need to look towards higher performance detector materials - particularly if they aim to approach the fundamental performance limits and compete with cooled photon detector arrays. Two examples of bolometer thin-film materials are described that achieve high performance from operating around phase transitions. The material Lead Scandium Tantalate (PST) has a paraelectric-to-ferroelectric phase transition around room temperature and is used with an applied field in the dielectric bolometer mode for thermal imaging. PST films grown by sputtering and liquid-source CVD have shown merit figures for thermal imaging a factor of 2 to 3 times higher than PZT-based pyroelectric thin films. The material Lanthanum Calcium Manganite (LCMO) has a paramagnetic to ferromagnetic phase transition around -20oC. This paper describes recent measurements of TCR and 1/f noise in pulsed laser-deposited LCMO films on Neodymium Gallate substrates. These results show that LCMO not only has high TCR's - up to 30%/K - but also low 1/f excess noise, with bolometer merit figures at least an order of magnitude higher than Vanadium Oxide, making it ideal for the next generation of microbolometer arrays. These high performance properties come at the expense of processing complexities and novel device designs will need to be introduced to realize the potential of these materials in the next generation of thermal detectors.

  13. Analysis and simulation of HV-CMOS assemblies for the CLIC vertex detector

    CERN Document Server

    Buckland, Matthew Daniel

    2017-01-01

    One of the design concepts currently under study for the vertex detector at the proposed Compact Linear Collider is a High-Voltage CMOS sensor, fabricated in a commercial 180 nm technology, capacitively coupled to a hybrid readout chip. Tests of the assemblies were carried out at the CERN SPS using 120 GeV/c pions, covering incident angles ranging from 0$^\\circ$ to 80$^\\circ$. The measurements have shown an excellent tracking performance with an efficiency above 99.7% and a spatial resolution of 5–7 $\\mu$m over the tested angular range. These results were then compared to TCAD simulations carried out using simulations, showing a good agreement for the current-voltage, breakdown and charge collection properties. The simulations have also been used to optimise future sensor design.

  14. Cone beam breast CT with a high pitch (75 μm), thick (500 μm) scintillator CMOS flat panel detector: Visibility of simulated microcalcifications

    OpenAIRE

    Shen, Youtao; Zhong, Yuncheng; Lai, Chao-Jen; Wang, Tianpeng; Shaw, Chris C.

    2013-01-01

    Purpose: To measure and investigate the improvement of microcalcification (MC) visibility in cone beam breast CT with a high pitch (75 μm), thick (500 μm) scintillator CMOS/CsI flat panel detector (Dexela 2923, Perkin Elmer).

  15. A novel, SiPM-array-based, monolithic scintillator detector for PET

    International Nuclear Information System (INIS)

    Schaart, Dennis R; Dam, Herman T van; Seifert, Stefan; Beekman, Freek J; Vinke, Ruud; Dendooven, Peter; Loehner, Herbert

    2009-01-01

    Silicon photomultipliers (SiPMs) are of great interest to positron emission tomography (PET), as they enable new detector geometries, for e.g., depth-of-interaction (DOI) determination, are MR compatible, and offer faster response and higher gain than other solid-state photosensors such as avalanche photodiodes. Here we present a novel detector design with DOI correction, in which a position-sensitive SiPM array is used to read out a monolithic scintillator. Initial characterization of a prototype detector consisting of a 4 x 4 SiPM array coupled to either the front or back surface of a 13.2 mm x 13.2 mm x 10 mm LYSO:Ce 3+ crystal shows that front-side readout results in significantly better performance than conventional back-side readout. Spatial resolutions 2 detector, equals 960 ps FWHM.

  16. The detector calibration system for the CUORE cryogenic bolometer array

    Energy Technology Data Exchange (ETDEWEB)

    Cushman, Jeremy S., E-mail: jeremy.cushman@yale.edu [Wright Laboratory, Department of Physics, Yale University, New Haven, CT 06520 (United States); Dally, Adam [Department of Physics, University of Wisconsin, Madison, WI 53706 (United States); Davis, Christopher J. [Wright Laboratory, Department of Physics, Yale University, New Haven, CT 06520 (United States); Ejzak, Larissa; Lenz, Daniel [Department of Physics, University of Wisconsin, Madison, WI 53706 (United States); Lim, Kyungeun E. [Wright Laboratory, Department of Physics, Yale University, New Haven, CT 06520 (United States); Heeger, Karsten M., E-mail: karsten.heeger@yale.edu [Wright Laboratory, Department of Physics, Yale University, New Haven, CT 06520 (United States); Maruyama, Reina H. [Wright Laboratory, Department of Physics, Yale University, New Haven, CT 06520 (United States); Nucciotti, Angelo [Dipartimento di Fisica, Università di Milano-Bicocca, Milano I-20126 (Italy); INFN – Sezione di Milano Bicocca, Milano I-20126 (Italy); Sangiorgio, Samuele [Department of Physics, University of Wisconsin, Madison, WI 53706 (United States); Wise, Thomas [Wright Laboratory, Department of Physics, Yale University, New Haven, CT 06520 (United States); Department of Physics, University of Wisconsin, Madison, WI 53706 (United States)

    2017-02-01

    The Cryogenic Underground Observatory for Rare Events (CUORE) is a ton-scale cryogenic experiment designed to search for neutrinoless double-beta decay of {sup 130}Te and other rare events. The CUORE detector consists of 988 TeO{sub 2} bolometers operated underground at 10 mK in a dilution refrigerator at the Laboratori Nazionali del Gran Sasso. Candidate events are identified through a precise measurement of their energy. The absolute energy response of the detectors is established by the regular calibration of each individual bolometer using gamma sources. The close-packed configuration of the CUORE bolometer array combined with the extensive shielding surrounding the detectors requires the placement of calibration sources within the array itself. The CUORE Detector Calibration System is designed to insert radioactive sources into and remove them from the cryostat while respecting the stringent heat load, radiopurity, and operational requirements of the experiment. This paper describes the design, commissioning, and performance of this novel source calibration deployment system for ultra-low-temperature environments.

  17. Low dark current InGaAs detector arrays for night vision and astronomy

    Science.gov (United States)

    MacDougal, Michael; Geske, Jon; Wang, Chad; Liao, Shirong; Getty, Jonathan; Holmes, Alan

    2009-05-01

    Aerius Photonics has developed large InGaAs arrays (1K x 1K and greater) with low dark currents for use in night vision applications in the SWIR regime. Aerius will present results of experiments to reduce the dark current density of their InGaAs detector arrays. By varying device designs and passivations, Aerius has achieved a dark current density below 1.0 nA/cm2 at 280K on small-pixel, detector arrays. Data is shown for both test structures and focal plane arrays. In addition, data from cryogenically cooled InGaAs arrays will be shown for astronomy applications.

  18. Evaluation of detector array technology for the verification of advanced intensity-modulated radiotherapy

    Science.gov (United States)

    Hussien, Mohammad

    Purpose: Quality assurance (QA) for intensity modulated radiotherapy (IMRT) has evolved substantially. In recent years, various ionization chamber or diode detector arrays have become commercially available, allowing pre-treatment absolute dose verification with near real-time results. This has led to a wide uptake of this technology to replace point dose and film dosimetry and to facilitate QA streamlining. However, arrays are limited by their spatial resolution giving rise to concerns about their response to clinically relevant deviations. The common factor in all commercial array systems is the reliance on the gamma index (γ) method to provide the quantitative evaluation of the measured dose distribution against the Treatment Planning System (TPS) calculated dose distribution. The mathematical definition of the gamma index presents computational challenges that can cause a variation in the calculation in different systems. The purpose of this thesis was to evaluate the suitability of detector array systems, combined with their implementation of the gamma index, in the verification and dosimetry audit of advanced IMRT. Method: The response of various commercial detector array systems (Delta4®, ArcCHECK®, and the PTW 2D-Array seven29™ and OCTAVIUS II™ phantom combination, Gafchromic® EBT2 and composite EPID measurements) to simulated deliberate changes in clinical IMRT and VMAT plans was evaluated. The variability of the gamma index calculation in the different systems was also evaluated by comparing against a bespoke Matlab-based gamma index analysis software. A novel methodology for using a commercial detector array in a dosimetry audit of rotational radiotherapy was then developed. Comparison was made between measurements using the detector array and those performed using ionization chambers, alanine and radiochromic film. The methodology was developed as part of the development of a national audit of rotational radiotherapy. Ten cancer centres were

  19. Terahertz computed tomography in three-dimensional using a pyroelectric array detector

    Science.gov (United States)

    Li, Bin; Wang, Dayong; Zhou, Xun; Rong, Lu; Huang, Haochong; Wan, Min; Wang, Yunxin

    2017-05-01

    Terahertz frequency range spans from 0.1 to 10 THz. Terahertz radiation can penetrate nonpolar materials and nonmetallic materials, such as plastics, wood, and clothes. Then the feature makes the terahertz imaging have important research value. Terahertz computed tomography makes use of the penetrability of terahertz radiation and obtains three-dimensional object projection data. In the paper, continuous-wave terahertz computed tomography with a pyroelectric array detectoris presented. Compared with scanning terahertz computed tomography, a pyroelectric array detector can obtain a large number of projection data in a short time, as the acquisition mode of the array pyroelectric detector omit the projection process on the vertical and horizontal direction. With the two-dimensional cross-sectional images of the object are obtained by the filtered back projection algorithm. The two side distance of the straw wall account for 80 pixels, so it multiplied by the pixel size is equal to the diameter of the straw about 6.4 mm. Compared with the actual diameter of the straw, the relative error is 6%. In order to reconstruct the three-dimensional internal structure image of the straw, the y direction range from 70 to 150 are selected on the array pyroelectric detector and are reconstructed by the filtered back projection algorithm. As the pixel size is 80 μm, the height of three-dimensional internal structure image of the straw is 6.48 mm. The presented system can rapidly reconstruct the three-dimensional object by using a pyroelectric array detector and explores the feasibility of on non-destructive evaluation and security testing.

  20. Design and characterization of radiation resistant integrated circuits for the LHC particle detectors using deep sub-micron CMOS technologies

    International Nuclear Information System (INIS)

    Anelli, Giovanni Maria

    2000-01-01

    The electronic circuits associated with the particle detectors of the CERN Large Hadron Collider (LHC) have to work in a highly radioactive environment. This work proposes a methodology allowing the design of radiation resistant integrated circuits using the commercial sub-micron CMOS technology. This method uses the intrinsic radiation resistance of ultra-thin grid oxides, the technology of enclosed layout transistors (ELT), and the protection rings to avoid the radio-induced creation of leakage currents. In order to check the radiation tolerance level, several test structures have been designed and tested with different radiation sources. These tests have permitted to study the physical phenomena responsible for the damages induced by the radiations and the possible remedies. Then, the particular characteristics of ELT transistors and their influence on the design of complex integrated circuits has been explored. The modeling of the W/L ratio, the asymmetries (for instance in the output conductance) and the performance of ELT couplings have never been studied yet. The noise performance of the 0.25 μ CMOS technology, used in the design of several integrated circuits of the LHC detectors, has been characterized before and after irradiation. Finally, two integrated circuits designed using the proposed method are presented. The first one is an analogic memory and the other is a circuit used for the reading of the signals of one of the LHC detectors. Both circuits were irradiated and have endured very high doses practically without any sign of performance degradation. (J.S.)

  1. Design of data acquisition system for 2D-ARRAY ionization chamber detector

    International Nuclear Information System (INIS)

    He Chaohui; Xing Guilai; Wu Zhifang; Wang Zhentao

    2012-01-01

    The introduction is given on the design and development of data acquisition system for 2D-ARRAY ionization chamber detector, which is used for dose verification of tumor radiotherapy. The paper describes the structure and the principle of the 2D-ARRAY ionization chamber detector system in detail, and focuses on the discussion on the design process of the detector's data acquisition system and the development of data acquisition system which is constituted by preamplifier, preamplifier control board and data acquisition board. The client can setup the parameters of the detector system via TCP/IP and do data processing such as high speed data collection and acquisition, further operation and so on. (authors)

  2. A 3D deep n-well CMOS MAPS for the ILC vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Gaioni, L., E-mail: luigi.gaioni@unipv.i [Universita di Pavia, I-27100 Pavia (Italy); INFN, Sezione di Pavia, I-27100 Pavia (Italy); Manghisoni, M. [Universita di Bergamo, I-24044 Dalmine (Bulgaria) (Italy); INFN, Sezione di Pavia, I-27100 Pavia (Italy); Ratti, L. [Universita di Pavia, I-27100 Pavia (Italy); INFN, Sezione di Pavia, I-27100 Pavia (Italy); Re, V.; Traversi, G. [Universita di Bergamo, I-24044 Dalmine (Bulgaria) (Italy); INFN, Sezione di Pavia, I-27100 Pavia (Italy)

    2010-05-21

    This work presents the features of a new kind of deep n-well monolithic active pixel sensor (DNW-MAPS), called SDR1 (Sparsified Data Readout), which exploits the capabilities of vertical integration (3D) processing in view of the design of a high granularity detector for vertexing applications at the International Linear Collider (ILC). SDR1 inherits and extends the functional capabilities of DNW-MAPS fabricated in planar (2D) CMOS technology and is expected to show better collection efficiency with respect to 2D versions. The aim of the paper is to outline the features of analog and digital architecture of the SDR1 chip, together with circuit simulations data. Also some device simulation results concerning detection efficiency will be discussed.

  3. Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging

    Directory of Open Access Journals (Sweden)

    Erwin Hack

    2016-02-01

    Full Text Available In terahertz (THz materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8–14 μm wavelength range, but are based on different absorber materials (i vanadium oxide; (ii amorphous silicon; (iii a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

  4. Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging.

    Science.gov (United States)

    Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P; Zolliker, Peter

    2016-02-06

    In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8-14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

  5. A FPGA-based signal processing unit for a GEM array detector

    International Nuclear Information System (INIS)

    Yen, W.W.; Chou, H.P.

    2013-06-01

    in the present study, a signal processing unit for a GEM one-dimensional array detector is presented to measure the trajectory of photoelectrons produced by cosmic X-rays. The present GEM array detector system has 16 signal channels. The front-end unit provides timing signals from trigger units and energy signals from charge sensitive amplifies. The prototype of the processing unit is implemented using commercial field programmable gate array circuit boards. The FPGA based system is linked to a personal computer for testing and data analysis. Tests using simulated signals indicated that the FPGA-based signal processing unit has a good linearity and is flexible for parameter adjustment for various experimental conditions (authors)

  6. High-speed nonvolatile CMOS/MNOS RAM

    International Nuclear Information System (INIS)

    Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

    1979-01-01

    A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

  7. On site calibration for new fluorescence detectors of the telescope array experiment

    International Nuclear Information System (INIS)

    Tokuno, H.; Murano, Y.; Kawana, S.; Tameda, Y.; Taketa, A.; Ikeda, D.; Udo, S.; Ogio, S.; Fukushima, M.; Azuma, R.; Fukuda, M.; Inoue, N.; Kadota, K.; Kakimoto, F.; Sagawa, H.; Sakurai, N.; Shibata, T.; Takeda, M.; Tsunesada, Y.

    2009-01-01

    The Telescope Array experiment is searching for the origin of ultra-high energy cosmic rays using a ground array of particle detectors and three fluorescence telescope stations. The precise calibration of the fluorescence detectors is important for small systematic errors in shower reconstruction. This paper details the process of calibrating cameras for two of the fluorescence telescope stations. This paper provides the operational results of these camera calibrations.

  8. Units of signals in the surface and underground scintillation detectors of the Yakutsk array

    International Nuclear Information System (INIS)

    Dedenko, L G; Fedorova, G F; Roganova, T M

    2013-01-01

    Signals in the surface and underground scintillation detectors from the extensive air shower particles at the Yakutsk array are measured in some practical units. These units are signals in detectors caused by the near vertical muons. These signals from the near vertical muons in the surface and underground detectors have been simulated with the help of the GEANT4 package. These simulations follow up the real experimental calibration of the surface and underground detectors carried out at the Yakutsk array. Results of simulations show the noticeable difference of ∼5% in energies deposited in these two types of detectors. This difference should be taken into account to interpret correctly data on the fraction of muons observed at the Yakutsk array and to make real conclusions about the composition of the primary cosmic radiation at ultra-high energies.

  9. Technique investigation on large area neutron scintillation detector array

    International Nuclear Information System (INIS)

    Chen Jiabin

    2006-12-01

    The detailed project for developing Large Area Neutron Scintillation Detector Array (LaNSA) to be used for measuring fusion fuel area density on Shenguang III prototype is presented, including experimental principle, detector working principle, electronics system design and the needs for target chamber etc. The detailed parameters for parts are given and the main causes affecting the system function are analyzed. The realization path is introduced. (authors)

  10. Active terahertz imaging with Ne indicator lamp detector arrays

    Science.gov (United States)

    Kopeika, N. S.; Abramovich, A.; Yadid-Pecht, O.; Yitzhaky, Y.

    2009-08-01

    The advantages of terahertz (THz) imaging are well known. They penetrate well most non-conducting media and there are no known biological hazards, This makes such imaging systems important for homeland security, as they can be used to image concealed objects and often into rooms or buildings from the outside. There are also biomedical applications that are arising. Unfortunately, THz imaging is quite expensive, especially for real time systems, largely because of the price of the detector. Bolometers and pyroelectric detectors can each easily cost at least hundreds of dollars if not more, thus making focal plane arrays of them quite expensive. We have found that common miniature commercial neon indicator lamps costing typically about 30 cents each exhibit high sensitivity to THz radiation [1-3], with microsecond order rise times, thus making them excellent candidates for such focal plane arrays. NEP is on the order of 10-10 W/Hz1/2. Significant improvement of detection performance is expected when heterodyne detection is used Efforts are being made to develop focal plane array imagers using such devices at 300 GHz. Indeed, preliminary images using 4x4 arrays have already been obtained. An 8x8 VLSI board has been developed and is presently being tested. Since no similar imaging systems have been developed previously, there are many new problems to be solved with such a novel and unconventional imaging system. These devices act as square law detectors, with detected signal proportional to THz power. This allows them to act as mixers in heterodyne detection, thus allowing NEP to be reduced further by almost two orders of magnitude. Plans are to expand the arrays to larger sizes, and to employ super resolution techniques to improve image quality beyond that ordinarily obtainable at THz frequencies.

  11. A 75 ps rms time resolution BiCMOS time to digital converter optimized for high rate imaging detectors

    CERN Document Server

    Hervé, C

    2002-01-01

    This paper presents an integrated time to digital converter (TDC) with a bin size adjustable in the range of 125 to 175 ps and a differential nonlinearity of +-0.3%. The TDC has four channels. Its architecture has been optimized for the readout of imaging detectors in use at Synchrotron Radiation facilities. In particular, a built-in logic flags piled-up events. Multi-hit patterns are also supported for other applications. Time measurements are extracted off chip at the maximum throughput of 40 MHz. The dynamic range is 14 bits. It has been fabricated in 0.8 mu m BiCMOS technology. Time critical inputs are PECL compatible whereas other signals are CMOS compatible. A second application specific integrated circuit (ASIC) has been developed which translates NIM electrical levels to PECL ones. Both circuits are used to assemble board level TDCs complying with industry standards like VME, NIM and PCI.

  12. Dosimetric characterization of a commercial two-dimensional array detector; Caracterizacao dosimetrica de um detector matricial bidimensional comercial

    Energy Technology Data Exchange (ETDEWEB)

    Gialluisi, Bruno L.; Santos, Gabriela R. dos; Sales, Camila P. de; Resende, Guilherme R.A.; Habitzreuter, Angela B.; Rodrigues, Laura N., E-mail: brunogialluisi@gmail.com [Universidade de Sao Paulo (HCFMRP/USP), Sao Paulo, SP (Brazil). Hospital das Clinicas. Servico de Radioterapia

    2013-04-15

    This paper investigates the dosimetric characteristics and performance of an array detector commercially available. The device is the I'mRT MatriXX® which is a two-dimensional detector array used in the verification of complex radiotherapy plans. It consists of 1,020 parallel plate ion chamber arranged in a 32x32 grid. Dose linearity was studied and its response was linear within the range of 5 to 1000 MU (R{sup 2} = 1). Dose rate dependence showed a maximum deviation of 0,62% comparatively with readings to 320 cGy/min. The detector stability was verified through repeated irradiations. Output factors matched well with measurements made with a Farmer chamber with an average deviation of 1,54%. The detector's effective point of measurement was determined and the inverse square law was also verified with a percentage deviation smaller than 3%. The results show that this detector can be used for quality control in IMRT thus reducing the time spent in the dosimetric verification of radiation fields. (author)

  13. Dosimetric characterization of a commercial two-dimensional array detector; Caracterizacao dosimetrica de um detector matricial bidimensional comercial

    Energy Technology Data Exchange (ETDEWEB)

    Gialluisi, Bruno L.; Santos, Gabriela R. dos; Sales, Camila P. de; Resende, Guilherme R.A.; Habitzreuter, Angela B.; Rodrigues, Laura N., E-mail: brunogialluisi@gmail.com [Universidade de Sao Paulo (HCFMRP/USP), Sao Paulo, SP (Brazil). Hospital das Clinicas. Servico de Radioterapia

    2013-04-15

    This paper investigates the dosimetric characteristics and performance of an array detector commercially available. The device is the I'mRT MatriXX® which is a two-dimensional detector array used in the verification of complex radiotherapy plans. It consists of 1,020 parallel plate ion chamber arranged in a 32x32 grid. Dose linearity was studied and its response was linear within the range of 5 to 1000 MU (R{sup 2} = 1). Dose rate dependence showed a maximum deviation of 0,62% comparatively with readings to 320 cGy/min. The detector stability was verified through repeated irradiations. Output factors matched well with measurements made with a Farmer chamber with an average deviation of 1,54%. The detector's effective point of measurement was determined and the inverse square law was also verified with a percentage deviation smaller than 3%. The results show that this detector can be used for quality control in IMRT thus reducing the time spent in the dosimetric verification of radiation fields. (author)

  14. Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation

    CERN Document Server

    Silvestri, M; Gerardin, Simone; Faccio, Federico; Paccagnella, Alessandro

    2010-01-01

    We present new experimental results on heavy ion-induced gate rupture on deep submicron CMOS transistor arrays. Through the use of dedicated test structures, composed by a large number of 130-nm MOSFETs connected in parallel, we show the response to heavy ion irradiation under high stress voltages of devices previously irradiated with X-rays. We found only a slight impact on gate rupture critical voltage at a LET of 32 MeV cm(2) mg(-1) for devices previously irradiated up to 3 Mrad(SiO2), and practically no change for 100 Mrad(SiO2) irradiation, dose of interest for the future super large hadron collider (SLHC).

  15. Optical detection of ultrasound from optically rough surfaces using a custom CMOS sensor

    International Nuclear Information System (INIS)

    Achamfuo-Yeboah, S O; Light, R A; Sharpies, S D

    2015-01-01

    The optical detection of ultrasound from optically rough surfaces is severely limited when using a conventional interferometric or optical beam deflection (OBD) setup because the detected light is speckled. This means that complicated and expensive setups are required to detect ultrasound optically on rough surfaces. We present a CMOS integrated circuit that can detect laser ultrasound in the presence of speckle. The detector circuit is based on the simple knife edge detector. It is self-adapting and is fast, inxepensive, compact and robust. The CMOS circuit is implemented as a widefield array of 32×32 pixels. At each pixel the received light is compared with an adjacent pixel in order to determine the local light gradient. The result of this comparison is stored and used to connect each pixel to the positive or negative gradient output as appropriate (similar to a balanced knife edge detector). The perturbation of the surface due to ultrasound preserves the speckle distribution whilst deflecting it. The spatial disturbance of the speckle pattern due to the ultrasound is detected by considering each pair of pixels as a knife edge detector. The sensor can adapt itself to match the received optical speckle pattern in less than 0.1 μs, and then detect the ultrasound within 0.5 μs of adaptation. This makes it possible to repeatedly detect ultrasound from optically rough surfaces very quickly. The detector is capable of independent operation controlled by a local microcontroller, or it may be connected to a computer for more sophisticated configuration and control. We present the theory of its operation and discuss results validating the concept and operation of the device. We also present preliminary results from an improved design which grants a higher bandwidth, allowing for optical detection of higher frequency ultrasound

  16. Measurements and simulation-based optimization of TIGRESS HPGe detector array performance

    International Nuclear Information System (INIS)

    Schumaker, M.A.

    2005-01-01

    TIGRESS is a new γ-ray detector array being developed for installation at the new ISAC-II facility at TRIUMF in Vancouver. When complete, it will consist of twelve large-volume segmented HPGe clover detectors, fitted with segmented Compton suppression shields. The combined operation of prototypes of both a TIGRESS detector and a suppression shield has been tested. Peak-to-total ratios, relative photopeak efficiencies, and energy resolution functions have been determined in order to characterize the performance of TIGRESS. This information was then used to refine a GEANT4 simulation of the full detector array. Using this simulation, methods to overcome the degradation of the photopeak efficiency and peak-to-total response that occurs with high γ-ray multiplicity events were explored. These methods take advantage of the high segmentation of both the HPGe clovers and the suppression shields to suppress or sum detector interactions selectively. For a range of γ-ray energies and multiplicities, optimal analysis methods have been determined, which has resulted in significant gains in the expected performance of TIGRESS. (author)

  17. Nanocantilever based mass sensor integrated with cmos circuitry

    DEFF Research Database (Denmark)

    Davis, Zachary James; Abadal, G.; Campabadal, F.

    2003-01-01

    We have demonstrated the successful integration of a cantilever based mass detector with standard CMOS circuitry. The purpose of the circuitry is to facilitate the readout of the cantilever's deflection in order to measure resonant frequency shifts of the cantilever. The principle and design...... of the mass detector are presented showing that miniaturization of such cantilever based resonant devices leads to highly sensitive mass sensors, which have the potential to detect single molecules. The design of the readout circuitry used for the first electrical characterization of an integrated cantilever...... with CMOS circuitry is demonstrated. The electrical characterization of the device shows that the resonant behavior of the cantilever depends on the applied voltages, which corresponds to theory....

  18. A sub-millimeter resolution PET detector module using a multi-pixel photon counter array

    International Nuclear Information System (INIS)

    Song, Tae Yong; Wu Heyu; Komarov, Sergey; Tai, Yuan-Chuan; Siegel, Stefan B

    2010-01-01

    A PET block detector module using an array of sub-millimeter lutetium oxyorthosilicate (LSO) crystals read out by an array of surface-mount, semiconductor photosensors has been developed. The detector consists of a LSO array, a custom acrylic light guide, a 3 x 3 multi-pixel photon counter (MPPC) array (S10362-11-050P, Hamamatsu Photonics, Japan) and a readout board with a charge division resistor network. The LSO array consists of 100 crystals, each measuring 0.8 x 0.8 x 3 mm 3 and arranged in 0.86 mm pitches. A Monte Carlo simulation was used to aid the design and fabrication of a custom light guide to control distribution of scintillation light over the surface of the MPPC array. The output signals of the nine MPPC are multiplexed by a charge division resistor network to generate four position-encoded analog outputs. Flood image, energy resolution and timing resolution measurements were performed using standard NIM electronics. The linearity of the detector response was investigated using gamma-ray sources of different energies. The 10 x 10 array of 0.8 mm LSO crystals was clearly resolved in the flood image. The average energy resolution and standard deviation were 20.0% full-width at half-maximum (FWHM) and ±5.0%, respectively, at 511 keV. The timing resolution of a single MPPC coupled to a LSO crystal was found to be 857 ps FWHM, and the value for the central region of detector module was 1182 ps FWHM when ±10% energy window was applied. The nonlinear response of a single MPPC when used to read out a single LSO was observed among the corner crystals of the proposed detector module. However, the central region of the detector module exhibits significantly less nonlinearity (6.5% for 511 keV). These results demonstrate that (1) a charge-sharing resistor network can effectively multiplex MPPC signals and reduce the number of output signals without significantly degrading the performance of a PET detector and (2) a custom light guide to permit light sharing

  19. Label-free silicon photonic biosensor system with integrated detector array

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

    2010-01-01

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

  20. Label-free silicon photonic biosensor system with integrated detector array.

    Science.gov (United States)

    Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

    2009-08-07

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

  1. Development of a charged particle detector array in Pelletron-LINAC facility

    International Nuclear Information System (INIS)

    John, Bency; Inkar, A.L.; Saxena, A.; Vind, R.P.; Gupta, Y.K.; Biswas, D.C.; Nayak, B.K.; Thomas, R.G.; Danu, L.S.; Choudhury, R.K.; Kailas, S.; Topkar, A.; Venkatramanan, S.; Kumar, Manish; Sunilkumar, S.

    2010-01-01

    A charged particle detector array consisting of 50 Si-CsI detector telescopes for study of heavy-ion reactions is under construction in BARC-TIFR Pelletron-LINAC facility. Developmental work carried out for the detector modules, front-end and pulse shape discrimination electronics, scattering chamber and other mechanical parts are summarized. Some new ideas developed during the course of work are pointed out. (author)

  2. Design considerations for large detector arrays on submillimeter-wave telescopes

    Science.gov (United States)

    Stark, Antony A.

    2000-07-01

    The emerging technology of large (approximately 10,000 pixel) submillimeter-wave bolometer arrays presents a novel optical design problem -- how can such arrays be fed by diffraction- limited telescope optics where the primary mirror is less than 100,000 wavelengths in diameter? Standard Cassegrain designs for radiotelescope optics exhibit focal surface curvature so large that detectors cannot be placed more than 25 beam diameters from the central ray. The problem is worse for Ritchey-Chretien designs, because these minimize coma while increasing field curvature. Classical aberrations, including coma, are usually dominated by diffraction in submillimeter- wave single dish telescopes. The telescope designer must consider (1) diffraction, (2) aberration, (3) curvature of field, (4) cross-polarization, (5) internal reflections, (6) the effect of blockages, (7) means of beam chopping on- and off-source, (8) gravitational and thermal deformations of the primary mirror, (9) the physical mounting of large detector packages, and (10) the effect of gravity and (11) vibration on those detectors. Simultaneous optimization of these considerations in the case of large detector arrays leads to telescopes that differ considerably from standard radiotelescope designs. Offset optics provide flexibility for mounting detectors, while eliminating blockage and internal reflections. Aberrations and cross-polarization can be the same as on-axis designs having the same diameter and focal length. Trade-offs include the complication of primary mirror homology and an increase in overall cost. A dramatic increase in usable field of view can be achieved using shaped optics. Solutions having one to six mirrors will be discussed, including possible six-mirror design for the proposed South Pole 10 m telescope.

  3. Epitaxial Ge-crystal arrays for X-ray detection

    International Nuclear Information System (INIS)

    Kreiliger, T; Falub, C V; Müller, E; Känel, H von; Isa, F; Isella, G; Chrastina, D; Bergamaschini, R; Marzegalli, A; Miglio, L; Kaufmann, R; Niedermann, P; Neels, A; Dommann, A; Meduňa, M

    2014-01-01

    Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%. The electrical characteristics of individual Ge/Si heterojunction diodes are obtained from in-situ measurements inside a scanning electron microscope. The fabrication of monolithically integrated detectors is shown to be compatible with Si-CMOS processing

  4. Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors

    Science.gov (United States)

    Brooke, Martin A.; Lee, Myunghee; Jokerst, Nan Marie; Camperi-Ginestet, C.

    1995-04-01

    While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the circuit designer will soon conclude that a high speed analog-oriented fabrication process provides superior performance advantages to a digital CMOS process. However, for applications where there are overwhelming reasons to integrate the receivers on the same IC as large amounts of conventional digital circuitry, the low yield and high cost of the exotic analog-oriented fabrication is no longer an option. The issues that result from a requirement to use a digital CMOS IC process cut across all aspects of receiver design, and result in significant differences in circuit design philosophy and topology. Digital ICs are primarily designed to yield small, fast CMOS devices for digital logic gates, thus no effort is put into providing accurate or high speed resistances, or capacitors. This lack of any reliable resistance or capacitance has a significant impact on receiver design. Since resistance optimization is not a prerogative of the digital IC process engineer, the wisest option is thus to not use these elements, opting instead for active circuitry to replace the functions normally ascribed to resistance and capacitance. Depending on the application receiver noise may be a dominant design constraint. The noise performance of CMOS amplifiers is different than bipolar or GaAs MESFET circuits, shot noise is generally insignificant when compared to channel thermal noise. As a result the optimal input stage topology is significantly different for the different technologies. It is found that, at speeds of operation approaching the limits of the digital CMOS process, open loop designs have noise-power-gain-bandwidth tradeoff performance superior to feedback designs. Furthermore, the lack of good resisters and capacitors

  5. Geant4-based simulations of charge collection in CMOS Active Pixel Sensors

    International Nuclear Information System (INIS)

    Esposito, M.; Allinson, N.M.; Price, T.; Anaxagoras, T.

    2017-01-01

    Geant4 is an object-oriented toolkit for the simulation of the interaction of particles and radiation with matter. It provides a snapshot of the state of a simulated particle in time, as it travels through a specified geometry. One important area of application is the modelling of radiation detector systems. Here, we extend the abilities of such modelling to include charge transport and sharing in pixelated CMOS Active Pixel Sensors (APSs); though similar effects occur in other pixel detectors. The CMOS APSs discussed were developed in the framework of the PRaVDA consortium to assist the design of custom sensors to be used in an energy-range detector for proton Computed Tomography (pCT). The development of ad-hoc classes, providing a charge transport model for a CMOS APS and its integration into the standard Geant4 toolkit, is described. The proposed charge transport model includes, charge generation, diffusion, collection, and sharing across adjacent pixels, as well as the full electronic chain for a CMOS APS. The proposed model is validated against experimental data acquired with protons in an energy range relevant for pCT.

  6. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  7. Versatile, reprogrammable area pixel array detector for time-resolved synchrotron x-ray applications

    Energy Technology Data Exchange (ETDEWEB)

    Gruner, Sol [Cornell Univ., Ithaca, NY (United States)

    2010-05-01

    The final technical report for DOE grant DE-SC0004079 is presented. The goal of the grant was to perform research, development and application of novel imaging x-ray detectors so as to effectively utilize the high intensity and brightness of the national synchrotron radiation facilities to enable previously unfeasible time-resolved x-ray research. The report summarizes the development of the resultant imaging x-ray detectors. Two types of detector platforms were developed: The first is a detector platform (called a Mixed-Mode Pixel Array Detector, or MM-PAD) that can image continuously at over a thousand images per second while maintaining high efficiency for wide dynamic range signals ranging from 1 to hundreds of millions of x-rays per pixel per image. Research on an even higher dynamic range variant is also described. The second detector platform (called the Keck Pixel Array Detector) is capable of acquiring a burst of x-ray images at a rate of millions of images per second.

  8. Implantable optogenetic device with CMOS IC technology for simultaneous optical measurement and stimulation

    Science.gov (United States)

    Haruta, Makito; Kamiyama, Naoya; Nakajima, Shun; Motoyama, Mayumi; Kawahara, Mamiko; Ohta, Yasumi; Yamasaki, Atsushi; Takehara, Hiroaki; Noda, Toshihiko; Sasagawa, Kiyotaka; Ishikawa, Yasuyuki; Tokuda, Takashi; Hashimoto, Hitoshi; Ohta, Jun

    2017-05-01

    In this study, we have developed an implantable optogenetic device that can measure and stimulate neurons by an optical method based on CMOS IC technology. The device consist of a blue LED array for optically patterned stimulation, a CMOS image sensor for acquiring brain surface image, and eight green LEDs surrounding the CMOS image sensor for illumination. The blue LED array is placed on the CMOS image sensor. We implanted the device in the brain of a genetically modified mouse and successfully demonstrated the stimulation of neurons optically and simultaneously acquire intrinsic optical images of the brain surface using the image sensor. The integrated device can be used for simultaneously measuring and controlling neuronal activities in a living animal, which is important for the artificial control of brain functions.

  9. A passive CMOS pixel sensor for the high luminosity LHC

    Energy Technology Data Exchange (ETDEWEB)

    Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Janssen, Jens; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

    2016-07-01

    The high luminosity upgrade for the Large Hadron Collider at CERN requires a new inner tracking detector for the ATLAS experiment. About 200 m{sup 2} of silicon detectors are needed demanding new, low cost hybridization- and sensor technologies. One promising approach is to use commercial CMOS technologies to produce the passive sensor for a hybrid pixel detector design. In this talk a fully functional prototype of a 300 μm thick, backside biased CMOS pixel sensor in 150 nm LFoundry technology is presented. The sensor is bump bonded to the ATLAS FE-I4 with AC and DC coupled pixels. Results like leakage current, noise performance, and charge collection efficiency are presented and compared to the actual ATLAS pixel sensor design.

  10. Monolithic CMOS imaging x-ray spectrometers

    Science.gov (United States)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  11. A methodology for dosimetry audit of rotational radiotherapy using a commercial detector array

    International Nuclear Information System (INIS)

    Hussein, Mohammad; Tsang, Yatman; Thomas, Russell A.S.; Gouldstone, Clare; Maughan, David; Snaith, Julia A.D.; Bolton, Steven C.; Nisbet, Andrew; Clark, Catharine H.

    2013-01-01

    Purpose: To develop a methodology for the use of a commercial detector array in dosimetry audits of rotational radiotherapy. Materials and methods: The methodology was developed as part of the development of a national audit of rotational radiotherapy. Ten cancer centres were asked to create a rotational radiotherapy treatment plan for a three-dimensional treatment-planning-system (3DTPS) test and audited. Phantom measurements using a commercial 2D ionisation chamber (IC) array were compared with measurements using 0.125 cm 3 IC, Gafchromic film and alanine pellets in the same plane. Relative and absolute gamma index (γ) comparisons were made for Gafchromic film and 2D-Array planes, respectively. Results: Comparisons between individual detectors within the 2D-Array against the corresponding IC and alanine measurement showed a statistically significant concordance correlation coefficient (both ρ c > 0.998, p < 0.001) with mean difference of −1.1 ± 1.1% and −0.8 ± 1.1%, respectively, in a high dose PTV. In the γ comparison between the 2D-Array and film it was that the 2D-Array was more likely to fail planes where there was a dose discrepancy due to the absolute analysis performed. Conclusions: It has been found that using a commercial detector array for a dosimetry audit of rotational radiotherapy is suitable in place of standard systems of dosimetry

  12. CMOS gate array characterization procedures

    Science.gov (United States)

    Spratt, James P.

    1993-09-01

    Present procedures are inadequate for characterizing the radiation hardness of gate array product lines prior to personalization because the selection of circuits to be used, from among all those available in the manufacturer's circuit library, is usually uncontrolled. (Some circuits are fundamentally more radiation resistant than others.) In such cases, differences in hardness can result between different designs of the same logic function. Hardness also varies because many gate arrays feature large custom-designed megacells (e.g., microprocessors and random access memories-MicroP's and RAM's). As a result, different product lines cannot be compared equally. A characterization strategy is needed, along with standardized test vehicle(s), methodology, and conditions, so that users can make informed judgments on which gate arrays are best suited for their needs. The program described developed preferred procedures for the radiation characterization of gate arrays, including a gate array evaluation test vehicle, featuring a canary circuit, designed to define the speed versus hardness envelope of the gate array. A multiplier was chosen for this role, and a baseline multiplier architecture is suggested that could be incorporated into an existing standard evaluation circuit chip.

  13. Test and evaluation of infrared detectors and arrays; Proceedings of the Meeting, Orlando, FL, Mar. 27-29, 1989

    Science.gov (United States)

    Hoke, Forney M.

    Papers on the testing and evaluation of IR detectors and arrays are presented, covering topics such as a short wavelength IR test system, pulse height analysis, the use of an expert system for IR detector testing, low-background IR focal plane testing, electron beam testing, high performance silicide Schottky photodiodes, the SDI organization focal plane test program, the absorption cross section of arsenic in silicon, and long wavelength IR hybrids. Other topics include low background radiometric detector measurements, an ultralow background dewar for IR detector characterization studies, a computer assisted mosaic array test station, a configurable detector array test station, automated detector material characterization capabilities, and a test system for mercury cadmium telluride photoconductor arrays. Additional topics include ionization dosimetry measurements inside a dewar for linac electron and californium-252 neutron environments, a radiation test facility using a variable-flux electron beam source, automated visual inspection of IR focal plane arrays, a titanium cryostat for low temperature radiation effects studies, a low dose rate gamma test facility, and the test and evaluation of stability in IR staring focal plane arrays after nonuniformity correction.

  14. Large arrays of discrete ionizing radiation detectors multiplexed using fluorescent optical converters

    International Nuclear Information System (INIS)

    Koslow, E.E.; Edelman, R.R.

    1985-01-01

    This invention provides a radiation imaging system employing arrays of scintillators. An object of the invention is to produce a detector with high spatial resolution, high gamma-photon absorption efficiency, excellent source and detector scatter rejection, and utilizing low-cost solid state opto-electronic devices. In one embodiment, it provides a radiation detection and conversion apparatus having an array of optically isolated radiation sensitive elements that emit optical radiation upon absorption of ionizing radiation. An array of channels, comprising a material that absorbs and traps the radiation emitted and transports it or radiation that has been shifted to longer wavelengths, is placed near the radiation-sensitive elements. Electro-optical detectors that convert the transported radiation into electrical signals are coupled to the channels. The activation of one of the electro-optical devices by radiation from one of the channels indicates that at least one of the radiation-sensitive elements near that channel has absorbed a quantity of radiation

  15. Lung counting: Comparison of a four detector array that has either metal or carbon fiber end caps, and the effect on array performance characteristics

    International Nuclear Information System (INIS)

    Sabbir Ahmed, Asm; Kramer, Gary H.

    2011-01-01

    This study described the performance of an array of HPGe detectors, made by ORTEC. In the existing system, a metal end cap was used in the detector construction. In general, the natural metal contains some radioactive materials, create high background noises and signals during in vivo counting. ORTEC proposed a novel carbon fiber to be used in end cap, without any radio active content. This paper described the methodology of developing a model of the given HPGe array-detectors, comparing the detection efficiency and cross talk among the detectors using two end cap materials: either metal or carbon fiber and to provide a recommendation about the end cap material. The detector's counting efficiency were studied using point and plane sources. The cross talk among the array detectors were studied using a homogeneous attenuating medium made of tissue equivalent material. The cross talk was significant when single or multiple point sources (simulated to heterogeneous hot spots) were embedded inside the attenuating medium. With carbon fiber, the cross talk increased about 100% for photon energy at about 100 keV. For a uniform distribution of radioactive material, the cross talk increased about 5-10% when the end cap was made of carbon instead of steel. Metal end cap was recommended for the array of HPGe detectors.

  16. Assembly and Integration Process of the First High Density Detector Array for the Atacama Cosmology Telescope

    Science.gov (United States)

    Li, Yaqiong; Choi, Steve; Ho, Shuay-Pwu; Crowley, Kevin T.; Salatino, Maria; Simon, Sara M.; Staggs, Suzanne T.; Nati, Federico; Wollack, Edward J.

    2016-01-01

    The Advanced ACTPol (AdvACT) upgrade on the Atacama Cosmology Telescope (ACT) consists of multichroicTransition Edge Sensor (TES) detector arrays to measure the Cosmic Microwave Background (CMB) polarization anisotropies in multiple frequency bands. The first AdvACT detector array, sensitive to both 150 and 230 GHz, is fabricated on a 150 mm diameter wafer and read out with a completely different scheme compared to ACTPol. Approximately 2000 TES bolometers are packed into the wafer leading to both a much denser detector density and readout circuitry. The demonstration of the assembly and integration of the AdvACT arrays is important for the next generation CMB experiments, which will continue to increase the pixel number and density. We present the detailed assembly process of the first AdvACT detector array.

  17. Characterization and quality control of avalanche photodiode arrays for the Clear-PEM detector modules

    International Nuclear Information System (INIS)

    Abreu, Conceicao; Amaral, Pedro; Carrico, Bruno; Ferreira, Miguel; Luyten, Joan; Moura, Rui; Ortigao, Catarina; Rato, Pedro; Varela, Joao

    2007-01-01

    Clear-PEM is a Positron Emission Mammography (PEM) prototype being developed in the framework of the Crystal Clear Collaboration at CERN. This device is a dedicated PET camera for mammography, based on LYSO:Ce scintillator crystals, Avalanche PhotoDiodes (APD) and a fast, low-noise electronics readout system, designed to examine both the breast and the axillary lymph node areas, and aiming at the detection of tumors down to 2 mm in diameter. The prototype has two planar detector heads, each composed of 96 detector modules. The Clear-PEM detector module is composed of a matrix of 32 identical 2x2x20 mm 3 LYSO:Ce crystals read at both ends by Hamamatsu S8550 APD arrays (4x8) for Depth-of-Interaction (DoI) capability. The APD arrays were characterized by the measurement of gain and dark current as a function of bias voltage, under controlled temperature conditions. Two independent setups were used. The full set of 398 APD arrays followed a well-defined quality control (QC) protocol, aiming at the rejection of arrays not complying within defined specifications. From a total of 398 arrays, only 2 (0.5%) were rejected, reassuring the trust in these detectors for prototype assembly and future developments

  18. Mercuric iodide room-temperature array detectors for gamma-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Patt, B. [Xsirius, Inc, Camarillo, CA (United States)

    1994-11-15

    Significant progress has been made recently in the development of mercuric iodide detector arrays for gamma-ray imaging, making real the possibility of constructing high-performance small, light-weight, portable gamma-ray imaging systems. New techniques have been applied in detector fabrication and then low noise electronics which have produced pixel arrays with high-energy resolution, high spatial resolution, high gamma stopping efficiency. Measurements of the energy resolution capability have been made on a 19-element protypical array. Pixel energy resolutions of 2.98% fwhm and 3.88% fwhm were obtained at 59 keV (241-Am) and 140-keV (99m-Tc), respectively. The pixel spectra for a 14-element section of the data is shown together with the composition of the overlapped individual pixel spectra. These techniques are now being applied to fabricate much larger arrays with thousands of pixels. Extension of these principles to imaging scenarios involving gamma-ray energies up to several hundred keV is also possible. This would enable imaging of the 208 keV and 375-414 keV 239-Pu and 240-Pu structures, as well as the 186 keV line of 235-U.

  19. Advancing the Technology of Monolithic CMOS detectors for their use as X-ray Imaging Spectrometers

    Science.gov (United States)

    Kenter, Almus

    The Smithsonian Astrophysical Observatory (SAO) proposes a two year program to further advance the scientific capabilities of monolithic CMOS detectors for use as x-ray imaging spectrometers. This proposal will build upon the progress achieved with funding from a previous APRA proposal that ended in 2013. As part of that previous proposal, x- ray optimized, highly versatile, monolithic CMOS imaging detectors and technology were developed and tested. The performance and capabilities of these devices were then demonstrated, with an emphasis on the performance advantages these devices have over CCDs and other technologies. The developed SAO/SRI-Sarnoff CMOS devices incorporate: Low noise, high sensitivity ("gain") pixels; Highly parallel on-chip signal chains; Standard and very high resistivity (30,000Ohm-cm) Si; Back-Side thinning and passivation. SAO demonstrated the performance benefits of each of these features in these devices. This new proposal high-lights the performance of this previous generation of devices, and segues into new technology and capability. The high sensitivity ( 135uV/e) 6 Transistor (6T) Pinned Photo Diode (PPD) pixels provided a large charge to voltage conversion gain to the detect and resolve even small numbers of photo electrons produced by x-rays. The on-chip, parallel signal chain processed an entire row of pixels in the same time that a CCD requires to processes a single pixel. The resulting high speed operation ( 1000 times faster than CCD) provide temporal resolution while mitigating dark current and allowed room temperature operation. The high resistivity Si provided full (over) depletion for thicker devices which increased QE for higher energy x-rays. In this proposal, SAO will investigate existing NMOS and existing PMOS devices as xray imaging spectrometers. Conventional CMOS imagers are NMOS. NMOS devices collect and measure photo-electrons. In contrast, PMOS devices collect and measure photo-holes. PMOS devices have various

  20. Gun muzzle flash detection using a single photon avalanche diode array in 0.18µm CMOS technology

    Science.gov (United States)

    Savuskan, Vitali; Jakobson, Claudio; Merhav, Tomer; Shoham, Avi; Brouk, Igor; Nemirovsky, Yael

    2015-05-01

    In this study, a CMOS Single Photon Avalanche Diode (SPAD) 2D array is used to record and sample muzzle flash events in the visible spectrum, from representative weapons. SPADs detect the emission peaks of alkali salts, potassium or sodium, with spectral emission lines around 769nm and 589nm, respectively. The alkali salts are included in the gunpowder to suppress secondary flashes ignited during the muzzle flash event. The SPADs possess two crucial properties for muzzle flash imaging: (i) very high photon detection sensitivity, (ii) a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. The sole noise sources are the ones prior to the readout circuitry (optical signal distribution, avalanche initiation distribution and nonphotonic generation). This enables high sampling frequencies in the kilohertz range without significant SNR degradation, in contrast to regular CMOS image sensors. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength, in the presence of sunlight. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics and signal processing, which will be reported. The frame rate of ~16 KHz was chosen as an optimum between SNR degradation and temporal profile recognition accuracy. In contrast to a single SPAD, the 2D array allows for multiple events to be processed simultaneously. Moreover, a significant field of view is covered, enabling comprehensive surveillance and imaging.

  1. A new detector array for charged particle spectroscopy

    CERN Document Server

    Cowin, R L; Chappell, S P G; Clarke, N M; Freer, M; Fulton, B R; Cunningham, R A; Curtis, N; Dillon, G; Lilley, J; Jones, C D; Lee, P; Rae, W D M

    1999-01-01

    A compact and highly segmented detector array consisting of 44 gas-silicon-caesium iodide, position sensitive, particle identification detector telescopes and up to 10 position-sensitive, silicon strip detectors has been constructed for the study of light-ion-heavy-ion reactions including cluster break-up in the energy range 5-15 MeV/nucleon. The detectors are housed in a purpose built vacuum chamber. The telescopes are placed in fixed positions, covering the forward hemisphere from 3 to 30 deg. in the laboratory with the target placed at 535 mm from the front of the telescopes or 6-52 deg. with the target placed at 215 mm. The strip detectors are placed in any of 30 fixed positions in the forward hemisphere. For 85 MeV sup 1 sup 2 C ions the telescope energy resolution (gas plus silicon) is 345 keV with an angular resolution of 0.03 deg. . Using the gas-silicon section ions with Z up to 21 can be identified. For ions that pass through the silicon isotopic identification is achieved using the silicon-CsI comb...

  2. Recent results with HV-CMOS and planar sensors for the CLIC vertex detector

    CERN Document Server

    AUTHOR|(SzGeCERN)734627

    2017-01-01

    The physics aims for the future multi-TeV e+e- Compact Linear Collider (CLIC) impose high precision requirements on the vertex detector which has to match the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of 3μm, 10 ns time stamping capabilities, low mass (⇠0.2% X0 per layer), low power dissipation and pulsed power operation. Recent results of test beam measurements and GEANT4 simulations for assemblies with Timepix3 ASICs and thin active-edge sensors are presented. The 65 nm CLICpix readout ASIC with 25μm pitch was bump bonded to planar silicon sensors and also capacitively coupled through a thin layer of glue to active HV-CMOS sensors. Test beam results for these two hybridisation concepts are presented.

  3. Study on data acquisition circuit used in SSPA linear array detector X-ray detection

    CERN Document Server

    Wei Biao; Che Zhen Ping

    2002-01-01

    After SSPA used as X-ray array detector is developed, the authors take a research on the data acquisition circuit applied to the detector. The experiment designed has verified the feasibility of application of this array detector and its data acquisition circuit to X-ray computed tomography (X-CT). The preliminary test results indicate that the method of the X-ray detection is feasible for industry X-CT nondestructive testing, which brings about advantage for detecting and measuring with high resolution, good efficiency and low cost

  4. Dual source and dual detector arrays tetrahedron beam computed tomography for image guided radiotherapy

    Science.gov (United States)

    Kim, Joshua; Lu, Weiguo; Zhang, Tiezhi

    2014-02-01

    Cone-beam computed tomography (CBCT) is an important online imaging modality for image guided radiotherapy. But suboptimal image quality and the lack of a real-time stereoscopic imaging function limit its implementation in advanced treatment techniques, such as online adaptive and 4D radiotherapy. Tetrahedron beam computed tomography (TBCT) is a novel online imaging modality designed to improve on the image quality provided by CBCT. TBCT geometry is flexible, and multiple detector and source arrays can be used for different applications. In this paper, we describe a novel dual source-dual detector TBCT system that is specially designed for LINAC radiation treatment machines. The imaging system is positioned in-line with the MV beam and is composed of two linear array x-ray sources mounted aside the electrical portal imaging device and two linear arrays of x-ray detectors mounted below the machine head. The detector and x-ray source arrays are orthogonal to each other, and each pair of source and detector arrays forms a tetrahedral volume. Four planer images can be obtained from different view angles at each gantry position at a frame rate as high as 20 frames per second. The overlapped regions provide a stereoscopic field of view of approximately 10-15 cm. With a half gantry rotation, a volumetric CT image can be reconstructed having a 45 cm field of view. Due to the scatter rejecting design of the TBCT geometry, the system can potentially produce high quality 2D and 3D images with less radiation exposure. The design of the dual source-dual detector system is described, and preliminary results of studies performed on numerical phantoms and simulated patient data are presented.

  5. Development of a small-scale protope of the GOSSIPO-2 chip in 0.13 um CMOS technology

    CERN Document Server

    Kluit, R; Gromov, V

    2007-01-01

    The GOSSIP (Gas On Slimmed Silicon Pixel) detector is a proposed alternative for silicon based pixel detectors. The Gossip Prototype (GOSSIPO) chip is being developed to serve as a prototype read-out chip for such a gas-filled detector. Thanks to the very low capacitance at the preamplifier input, the front-end of the chip demonstrates low-noise performance in combination with a fast peaking time and low analog power dissipation. Measurement of the drift time of every primary electron in the gas volume enables 3D reconstruction of the particle tracks. For this purpose a Time-to- Digital converter must be placed in each pixel. A small-scale prototype of the GOSSIP chip has been developed in the 0.13 μm CMOS technology. The prototype includes a 16 by 16 pixel array where each pixel is equipped with a front-end circuit, threshold DAC, and a 4-bit TDC. The chip is available for testing in May 2007 and after initial tests it will be postprocessed to build a prototype detector. This paper describes the detector de...

  6. Empirical electro-optical and x-ray performance evaluation of CMOS active pixels sensor for low dose, high resolution x-ray medical imaging

    International Nuclear Information System (INIS)

    Arvanitis, C. D.; Bohndiek, S. E.; Royle, G.; Blue, A.; Liang, H. X.; Clark, A.; Prydderch, M.; Turchetta, R.; Speller, R.

    2007-01-01

    Monolithic complementary metal oxide semiconductor (CMOS) active pixel sensors with high performance have gained attention in the last few years in many scientific and space applications. In order to evaluate the increasing capabilities of this technology, in particular where low dose high resolution x-ray medical imaging is required, critical electro-optical and physical x-ray performance evaluation was determined. The electro-optical performance includes read noise, full well capacity, interacting quantum efficiency, and pixels cross talk. The x-ray performance, including x-ray sensitivity, modulation transfer function, noise power spectrum, and detection quantum efficiency, has been evaluated in the mammographic energy range. The sensor is a 525x525 standard three transistor CMOS active pixel sensor array with more than 75% fill factor and 25x25 μm pixel pitch. Reading at 10 f/s, it is found that the sensor has 114 electrons total additive noise, 10 5 electrons full well capacity with shot noise limited operation, and 34% interacting quantum efficiency at 530 nm. Two different structured CsI:Tl phosphors with thickness 95 and 115 μm, respectively, have been optically coupled via a fiber optic plate to the array resulting in two different system configurations. The sensitivity of the two different system configurations was 43 and 47 electrons per x-ray incident on the sensor. The MTF at 10% of the two different system configurations was 9.5 and 9 cycles/mm with detective quantum efficiency of 0.45 and 0.48, respectively, close to zero frequency at ∼0.44 μC/kg (1.72 mR) detector entrance exposure. The detector was quantum limited at low spatial frequencies and its performance was comparable with high resolution a:Si and charge coupled device based x-ray imagers. The detector also demonstrates almost an order of magnitude lower noise than active matrix flat panel imagers. The results suggest that CMOS active pixel sensors when coupled to structured CsI:Tl can

  7. The water Cherenkov detector array for studies of cosmic rays at the University of Puebla

    International Nuclear Information System (INIS)

    Cotzomi, J.; Moreno, E.; Murrieta, T.; Palma, B.; Perez, E.; Salazar, H.; Villasenor, L.

    2005-01-01

    We describe the design and performance of a hybrid extensive air shower detector array built on the Campus of the University of Puebla (19 - bar N, 90 - bar W, 800g/cm 2 ) to measure the energy, arrival direction and composition of primary cosmic rays with energies around 1PeV, i.e., around the knee of the cosmic ray spectrum. The array consists of 3 water Cherenkov detectors of 1.86m 2 cross-section and 12 liquid scintillator detectors of 1m 2 distributed in a square grid with a detector spacing of 20m over an area of 4000m 2 . We discuss the calibration and stability of the array for both sets of detectors and report on preliminary measurements and reconstruction of the lateral distributions for the electromagnetic (EM) and muonic components of extensive air showers. We also discuss how the hybrid character of the array can be used to measure mass composition of the primary cosmic rays by estimating the relative contents of muons with respect to the EM component of extensive air showers. This facility is also used to train students interested in the field of cosmic rays

  8. Pixel front-end development in 65 nm CMOS technology

    International Nuclear Information System (INIS)

    Havránek, M; Hemperek, T; Kishishita, T; Krüger, H; Wermes, N

    2014-01-01

    Luminosity upgrade of the LHC (HL-LHC) imposes severe constraints on the detector tracking systems in terms of radiation hardness and capability to cope with higher hit rates. One possible way of keeping track with increasing luminosity is the usage of more advanced technologies. Ultra deep sub-micron CMOS technologies allow a design of complex and high speed electronics with high integration density. In addition, these technologies are inherently radiation hard. We present a prototype of analog pixel front-end integrated circuit designed in 65 nm CMOS technology with applications oriented towards the ATLAS Pixel Detector upgrade. The aspects of ultra deep sub-micron design and performance of the analog pixel front-end circuits will be discussed

  9. Photon detection with CMOS sensors for fast imaging

    International Nuclear Information System (INIS)

    Baudot, J.; Dulinski, W.; Winter, M.; Barbier, R.; Chabanat, E.; Depasse, P.; Estre, N.

    2009-01-01

    Pixel detectors employed in high energy physics aim to detect single minimum ionizing particle with micrometric positioning resolution. Monolithic CMOS sensors succeed in this task thanks to a low equivalent noise charge per pixel of around 10 to 15 e - , and a pixel pitch varying from 10 to a few 10 s of microns. Additionally, due to the possibility for integration of some data treatment in the sensor itself, readout times of 100μs have been reached for 100 kilo-pixels sensors. These aspects of CMOS sensors are attractive for applications in photon imaging. For X-rays of a few keV, the efficiency is limited to a few % due to the thin sensitive volume. For visible photons, the back-thinned version of CMOS sensor is sensitive to low intensity sources, of a few hundred photons. When a back-thinned CMOS sensor is combined with a photo-cathode, a new hybrid detector results (EBCMOS) and operates as a fast single photon imager. The first EBCMOS was produced in 2007 and demonstrated single photon counting with low dark current capability in laboratory conditions. It has been compared, in two different biological laboratories, with existing CCD-based 2D cameras for fluorescence microscopy. The current EBCMOS sensitivity and frame rate is comparable to existing EMCCDs. On-going developments aim at increasing this frame rate by, at least, an order of magnitude. We report in conclusion, the first test of a new CMOS sensor, LUCY, which reaches 1000 frames per second.

  10. Conceptual design of the early implementation of the NEutron Detector Array (NEDA) with AGATA

    Science.gov (United States)

    Hüyük, Tayfun; Di Nitto, Antonio; Jaworski, Grzegorz; Gadea, Andrés; Javier Valiente-Dobón, José; Nyberg, Johan; Palacz, Marcin; Söderström, Pär-Anders; Jose Aliaga-Varea, Ramon; de Angelis, Giacomo; Ataç, Ayşe; Collado, Javier; Domingo-Pardo, Cesar; Egea, Francisco Javier; Erduran, Nizamettin; Ertürk, Sefa; de France, Gilles; Gadea, Rafael; González, Vicente; Herrero-Bosch, Vicente; Kaşkaş, Ayşe; Modamio, Victor; Moszynski, Marek; Sanchis, Enrique; Triossi, Andrea; Wadsworth, Robert

    2016-03-01

    The NEutron Detector Array (NEDA) project aims at the construction of a new high-efficiency compact neutron detector array to be coupled with large γ-ray arrays such as AGATA. The application of NEDA ranges from its use as selective neutron multiplicity filter for fusion-evaporation reaction to a large solid angle neutron tagging device. In the present work, possible configurations for the NEDA coupled with the Neutron Wall for the early implementation with AGATA has been simulated, using Monte Carlo techniques, in order to evaluate their performance figures. The goal of this early NEDA implementation is to improve, with respect to previous instruments, efficiency and capability to select multiplicity for fusion-evaporation reaction channels in which 1, 2 or 3 neutrons are emitted. Each NEDA detector unit has the shape of a regular hexagonal prism with a volume of about 3.23l and it is filled with the EJ301 liquid scintillator, that presents good neutron- γ discrimination properties. The simulations have been performed using a fusion-evaporation event generator that has been validated with a set of experimental data obtained in the 58Ni + 56Fe reaction measured with the Neutron Wall detector array.

  11. Enhancement of concentration range of chromatographically detectable components with array detector mass spectrometry

    Science.gov (United States)

    Enke, Christie

    2013-02-19

    Methods and instruments for high dynamic range analysis of sample components are described. A sample is subjected to time-dependent separation, ionized, and the ions dispersed with a constant integration time across an array of detectors according to the ions m/z values. Each of the detectors in the array has a dynamically adjustable gain or a logarithmic response function, producing an instrument capable of detecting a ratio of responses or 4 or more orders of magnitude.

  12. A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

    Science.gov (United States)

    Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

    1993-01-01

    A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

  13. Dual source and dual detector arrays tetrahedron beam computed tomography for image guided radiotherapy

    International Nuclear Information System (INIS)

    Kim, Joshua; Zhang, Tiezhi; Lu, Weiguo

    2014-01-01

    Cone-beam computed tomography (CBCT) is an important online imaging modality for image guided radiotherapy. But suboptimal image quality and the lack of a real-time stereoscopic imaging function limit its implementation in advanced treatment techniques, such as online adaptive and 4D radiotherapy. Tetrahedron beam computed tomography (TBCT) is a novel online imaging modality designed to improve on the image quality provided by CBCT. TBCT geometry is flexible, and multiple detector and source arrays can be used for different applications. In this paper, we describe a novel dual source–dual detector TBCT system that is specially designed for LINAC radiation treatment machines. The imaging system is positioned in-line with the MV beam and is composed of two linear array x-ray sources mounted aside the electrical portal imaging device and two linear arrays of x-ray detectors mounted below the machine head. The detector and x-ray source arrays are orthogonal to each other, and each pair of source and detector arrays forms a tetrahedral volume. Four planer images can be obtained from different view angles at each gantry position at a frame rate as high as 20 frames per second. The overlapped regions provide a stereoscopic field of view of approximately 10–15 cm. With a half gantry rotation, a volumetric CT image can be reconstructed having a 45 cm field of view. Due to the scatter rejecting design of the TBCT geometry, the system can potentially produce high quality 2D and 3D images with less radiation exposure. The design of the dual source–dual detector system is described, and preliminary results of studies performed on numerical phantoms and simulated patient data are presented. (paper)

  14. Long term ionization response of several BiCMOS VLSIC technologies

    International Nuclear Information System (INIS)

    Pease, R.L.; Combs, W.; Clark, S.

    1992-01-01

    BiCMOS is emerging as a strong competitor to CMOS for gate arrays and memories because of its performance advantages for the same feature size. In this paper, the authors examine the long term ionization response of five BiCMOS technologies by characterizing test structures which emphasize the various failure modes of CMOS and bipolar. The primary failure modes are found to be associated with the recessed field oxide isolation; edge leakage in the n channel MOSFETs and buried layer to buried layer leakage in the bipolar. The ionization failure thresholds for worst case bias were in the range of 5-20 Krad(Si) for both failure modes in all five technologies

  15. Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990

    Science.gov (United States)

    Dereniak, Eustace L.; Sampson, Robert E.

    1990-09-01

    The papers contained in this volume provide an overview of recent advances and the current state of developments in the field of infrared detectors and focal plane arrays. Topics discussed include nickel silicide Schottky-barrier detectors for short-wavelength infrared applications; high performance PtSi linear and focal plane arrays; and multispectral band Schottky-barrier IRSSD for remote-sensing applications. Papers are also presented on the performance of an Insi hybrid focal array; characterization of IR focal plane test stations; GaAs CCD readout for engineered bandgap detectors; and fire detection system for aircraft cargo bays.

  16. Latch-up and radiation integrated circuit--LURIC: a test chip for CMOS latch-up investigation

    International Nuclear Information System (INIS)

    Estreich, D.B.

    1978-11-01

    A CMOS integrated circuit test chip (Latch-Up and Radiation Integrated Circuit--LURIC) designed for CMOS latch-up and radiation effects research is described. The purpose of LURIC is (a) to provide information on the physics of CMOS latch-up, (b) to study the layout dependence of CMOS latch-up, and (c) to provide special latch-up test structures for the development and verification of a latch-up model. Many devices and test patterns on LURIC are also well suited for radiation effects studies. LURIC contains 86 devices and related test structures. A 12-layer mask set allows both metal gate CMOS and silicon gate ELA (Extended Linear Array) CMOS to be fabricated. Six categories of test devices and related test structures are included. These are (a) the CD4007 metal gate CMOS IC with auxiliary test structures, (b) ELA CMOS cells, (c) field-aided lateral pnp transistors, (d) p-well and substrate spreading resistance test structures, (e) latch-up test structures (simplified symmetrical latch-up paths), and (f) support test patterns (e.g., MOS capacitors, p + n diodes, MOS test transistors, van der Pauw and Kelvin contact resistance test patterns, etc.). A standard probe pattern array has been used on all twenty-four subchips for testing convenience

  17. Simulations of depleted CMOS sensors for high-radiation environments

    CERN Document Server

    Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

    2017-01-01

    After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

  18. Conference on physics from large γ-ray detector arrays

    International Nuclear Information System (INIS)

    1995-01-01

    The conference on open-quotes Physics from Large γ-ray Detector Arraysclose quotes is a continuation of the series of conferences that have been organized every two years by the North American Heavy-ion Laboratories. The aim of the conference this year was to encourage discussion of the physics that can be studied with such large arrays. This volume is the collected proceedings from this conference. It discusses properties of nuclear states which can be created in heavy-ion reactions, and which can be observed via such detector systems

  19. Monolithic circuits for barium fluoride detectors used in nuclear physics experiments. CRADA final report

    International Nuclear Information System (INIS)

    Varner, R.L.; Blankenship, J.L.; Beene, J.R.; Todd, R.A.

    1998-02-01

    Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beam Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF 2 ) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF 2 detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented

  20. An inverter-based capacitive trans-impedance amplifier readout with offset cancellation and temporal noise reduction for IR focal plane array

    Science.gov (United States)

    Chen, Hsin-Han; Hsieh, Chih-Cheng

    2013-09-01

    This paper presents a readout integrated circuit (ROIC) with inverter-based capacitive trans-impedance amplifier (CTIA) and pseudo-multiple sampling technique for infrared focal plane array (IRFPA). The proposed inverter-based CTIA with a coupling capacitor [1], executing auto-zeroing technique to cancel out the varied offset voltage from process variation, is used to substitute differential amplifier in conventional CTIA. The tunable detector bias is applied from a global external bias before exposure. This scheme not only retains stable detector bias voltage and signal injection efficiency, but also reduces the pixel area as well. Pseudo-multiple sampling technique [2] is adopted to reduce the temporal noise of readout circuit. The noise reduction performance is comparable to the conventional multiple sampling operation without need of longer readout time proportional to the number of samples. A CMOS image sensor chip with 55×65 pixel array has been fabricated in 0.18um CMOS technology. It achieves a 12um×12um pixel size, a frame rate of 72 fps, a power-per-pixel of 0.66uW/pixel, and a readout temporal noise of 1.06mVrms (16 times of pseudo-multiple sampling), respectively.

  1. A low-power small-area ADC array for IRFPA readout

    Science.gov (United States)

    Zhong, Shengyou; Yao, Libin

    2013-09-01

    The readout integrated circuit (ROIC) is a bridge between the infrared focal plane array (IRFPA) and image processing circuit in an infrared imaging system. The ROIC is the first part of signal processing circuit and connected to detectors directly, so its performance will greatly affect the detector or even the whole imaging system performance. With the development of CMOS technologies, it's possible to digitalize the signal inside the ROIC and develop the digital ROIC. Digital ROIC can reduce complexity of the whole system and improve the system reliability. More importantly, it can accommodate variety of digital signal processing techniques which the traditional analog ROIC cannot achieve. The analog to digital converter (ADC) is the most important building block in the digital ROIC. The requirements for ADCs inside the ROIC are low power, high dynamic range and small area. In this paper we propose an RC hybrid Successive Approximation Register (SAR) ADC as the column ADC for digital ROIC. In our proposed ADC structure, a resistor ladder is used to generate several voltages. The proposed RC hybrid structure not only reduces the area of capacitor array but also releases requirement for capacitor array matching. Theory analysis and simulation show RC hybrid SAR ADC is suitable for ADC array applications

  2. Conceptual design of the early implementation of the NEutron Detector Array (NEDA) with AGATA

    Energy Technology Data Exchange (ETDEWEB)

    Hueyuek, Tayfun; Gadea, Andres; Domingo-Pardo, Cesar [Universidad de Valencia, Instituto de Fisica Corpuscular, CSIC, Paterna (Valencia) (Spain); Di Nitto, Antonio [Istituto Nazionale di Fisica Nucleare, Napoli (Italy); Johannes Gutenberg-Universitaet Mainz, Mainz (Germany); Jaworski, Grzegorz; Javier Valiente-Dobon, Jose; De Angelis, Giacomo; Modamio, Victor; Triossi, Andrea [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Legnaro (Italy); Nyberg, Johan [Uppsala University, Department of Physics and Astronomy, Uppsala (Sweden); Palacz, Marcin [University of Warsaw, Heavy Ion Laboratory, Warsaw (Poland); Soederstroem, Paer-Anders [RIKEN Nishina Center, Saitama (Japan); Aliaga-Varea, Ramon Jose [Universidad de Valencia, Instituto de Fisica Corpuscular, CSIC, Paterna (Valencia) (Spain); Universidad Politecnica de Valencia, I3M, Valencia (Spain); Atac, Ayse [Ankara University, Department of Physics, Faculty of Sciences, Ankara (Turkey); The Royal Institute of Technology, Stockholm (Sweden); Collado, Javier; Egea, Francisco Javier; Gonzalez, Vicente; Sanchis, Enrique [University of Valencia, Department of Electronic Engineering, Burjassot (Valencia) (Spain); Erduran, Nizamettin [Istanbul Sabahattin Zaim University, Faculty of Engineering and Natural Sciences, Istanbul (Turkey); Ertuerk, Sefa [University of Nigde, Department of Physics, Faculty of Science and Arts, Nigde (Turkey); France, Gilles de [CNRS/IN2P3, GANIL, CEA/DSAM, Caen (France); Gadea, Rafael; Herrero-Bosch, Vicente [Universidad Politecnica de Valencia, I3M, Valencia (Spain); Kaskas, Ayse [Ankara University, Department of Physics, Faculty of Sciences, Ankara (Turkey); Moszynski, Marek [National Centre for Nuclear Research, Otwock-Swierk (Poland); Wadsworth, Robert [University of York, Department of Physics, York (United Kingdom)

    2016-03-15

    The NEutron Detector Array (NEDA) project aims at the construction of a new high-efficiency compact neutron detector array to be coupled with large γ -ray arrays such as AGATA. The application of NEDA ranges from its use as selective neutron multiplicity filter for fusion-evaporation reaction to a large solid angle neutron tagging device. In the present work, possible configurations for the NEDA coupled with the Neutron Wall for the early implementation with AGATA has been simulated, using Monte Carlo techniques, in order to evaluate their performance figures. The goal of this early NEDA implementation is to improve, with respect to previous instruments, efficiency and capability to select multiplicity for fusion-evaporation reaction channels in which 1, 2 or 3 neutrons are emitted. Each NEDA detector unit has the shape of a regular hexagonal prism with a volume of about 3.23l and it is filled with the EJ301 liquid scintillator, that presents good neutron- γ discrimination properties. The simulations have been performed using a fusion-evaporation event generator that has been validated with a set of experimental data obtained in the {sup 58}Ni + {sup 56}Fe reaction measured with the Neutron Wall detector array. (orig.)

  3. Application of a diode-array detector in capillary electrophoresis

    NARCIS (Netherlands)

    Beck, W.; Hoek, van R.; Engelhardt, H.

    1993-01-01

    In the last decade diode-array detection has proved to be extremely useful in high performance liquid chromatography in recording UV-visible spectra directly and on-line in the column effluent. In capillary electrophoresis (CE) only fast-scanning detectors with long scan times (up to 2 s) are

  4. 1024-Pixel CMOS Multimodality Joint Cellular Sensor/Stimulator Array for Real-Time Holistic Cellular Characterization and Cell-Based Drug Screening.

    Science.gov (United States)

    Park, Jong Seok; Aziz, Moez Karim; Li, Sensen; Chi, Taiyun; Grijalva, Sandra Ivonne; Sung, Jung Hoon; Cho, Hee Cheol; Wang, Hua

    2018-02-01

    This paper presents a fully integrated CMOS multimodality joint sensor/stimulator array with 1024 pixels for real-time holistic cellular characterization and drug screening. The proposed system consists of four pixel groups and four parallel signal-conditioning blocks. Every pixel group contains 16 × 16 pixels, and each pixel includes one gold-plated electrode, four photodiodes, and in-pixel circuits, within a pixel footprint. Each pixel supports real-time extracellular potential recording, optical detection, charge-balanced biphasic current stimulation, and cellular impedance measurement for the same cellular sample. The proposed system is fabricated in a standard 130-nm CMOS process. Rat cardiomyocytes are successfully cultured on-chip. Measured high-resolution optical opacity images, extracellular potential recordings, biphasic current stimulations, and cellular impedance images demonstrate the unique advantages of the system for holistic cell characterization and drug screening. Furthermore, this paper demonstrates the use of optical detection on the on-chip cultured cardiomyocytes to real-time track their cyclic beating pattern and beating rate.

  5. The development of a single-crystal fiber-array scintillator area detector

    International Nuclear Information System (INIS)

    Loong, Chun; Vitt, Richard; Sayir, Ali; Sayir, Haluk

    2001-01-01

    The scientific output of a neutron instrument is directly proportional to the effectiveness of its detector system-coverage of scattering area, pixel resolution, counting efficiency, signal-to-noise ratio, life time and cost. The current neutron scintillator detectors employ mainly 6 Li-doped glass and ZnS, both of which present well-know limitations such as low light output, high gamma sensitivity in the case of 6 Li-glass and optical opacity in the case of ZnS. We aim to develop a position-sensitive, flight-time differentiable, efficient and cost-effective neutron detector system based on single-crystal scintillator fiber-arrays. The laser-heated melt modulation fiber growth technology developed at NASA provides the means to grow high-purity single-crystal fibers or rods of variable diameters (200 μm to 5 mm) and essentially unlimited length. Arrays of such fibers can be tailored to meet the requirements of pixel size, geometric configuration, and coverage area for a detector system. We report a plan in the growth and characterization of scintillators based on lithium silicates and boron aluminates using Ce as activator. (author)

  6. Chip development in 65 nm CMOS technology for the high luminosity upgrade of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Germic, Leonard; Hemperek, Tomasz; Kishishita, Tetsuichi; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [University of Bonn, Bonn (Germany)

    2016-07-01

    The LHC High Luminosity upgrade will result in a significant change of environment in which particle detectors are going to operate, especially for devices very close to the interaction point like pixel detector electronics. Challenges arising from the increased hit rate will have to be solved by designing faster and more complex readout electronics that will also have to withstand unprecedented radiation doses. Developing such integrated circuit requires a significant R and D effort and resources, therefore a joint development project between several institutes (including ours) was started. This collaboration, named RD53, aims to develop a pixel readout chip suitable for ATLAS' and CMS' upgrades using a 65nm CMOS technology. During this presentation motivations and benefits of using this very deep-submicron technology are discussed. Most of the talk is allocated to presenting some of the circuits designed by our group (focusing on developments connected to RD53 collaboration), along with their performance measurement results.

  7. Chip development in 65 nm CMOS technology for the high luminosity upgrade of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Germic, Leonard; Hemperek, Tomasz; Kishishita, Testsuichi; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [University of Bonn, Bonn (Germany); Havranek, Miroslav [University of Bonn, Bonn (Germany); Institute of Physics of the Academy of Sciences, Prague (Czech Republic)

    2015-07-01

    The LHC High Luminosity upgrade will result in a significant change of environment in which particle detectors are going to operate, especially for devices very close to the interaction point like pixel detector electronics. Challenges coming from the higher hit rate will have to be solved by designing faster and more complex circuits, while at the same time keeping in mind very high radiation hardness requirements. Therefore matching the specification set by the high luminosity upgrade requires a large R and D effort. Our group is participating in such a joint development * namely the RD53 collaboration * which goal is to design a new pixel chip using an advanced 65 nm CMOS technology. During this presentation motivations and benefits of using this very deep-submicron technology will be shown together with a comparison with older technologies (130 nm, 250 nm). Most of the talk is allocated to presenting some of the circuits designed by our group, along with their performance measurement results.

  8. Superconducting Thin-Film Interconnects for Cryogenic Photon Detector Arrays, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Advanced imaging spectrometers for x-ray astronomy will require significant improvements in the high density interconnects between the detector arrays and the first...

  9. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    International Nuclear Information System (INIS)

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  10. The first fully functional 3D CMOS chip with Deep N-well active pixel sensors for the ILC vertex detector

    International Nuclear Information System (INIS)

    Traversi, G.; Gaioni, L.; Manazza, A.; Manghisoni, M.; Ratti, L.; Re, V.

    2013-01-01

    This work presents the characterization of Deep N-well (DNW) active pixel sensors fabricated in a vertically integrated technology. The DNW approach takes advantage of the triple well structure to lay out a sensor with relatively large charge collecting area (as compared to standard three transistor MAPS), while the readout is performed by a classical signal processing chain for capacitive detectors. This new 3D design relies upon stacking two homogeneous tiers fabricated in a 130 nm CMOS process where the top tier is thinned down to about 12μm to expose through silicon vias (TSV), therefore making connection to the buried circuits possible. This technology has been used to design a fine pitch 3D CMOS sensor with sparsification capabilities, in view of vertexing applications to the International Linear Collider (ILC) experiments. Results from the characterization of different kind of test structures, including single pixels, 3×3 and 8×8 matrices, are presented

  11. A new MBE CdTe photoconductor array detector for X-ray applications

    International Nuclear Information System (INIS)

    Yoo, S.S.; Sivananthan, S.; Faurie, J.P.; Rodricks, B.; Bai, J.; Montano, P.A.; Argonne National Lab., IL

    1994-10-01

    A CdTe photoconductor array x-ray detector was grown using Molecular Beam Epitaxially (MBE) on a Si (100) substrate. The temporal response of the photoconductor arrays is as fast as 21 psec risetime and 38 psec Full Width Half Maximum (FWHM). Spatial and energy responses were obtained using x-rays from a rotating anode and synchrotron radiation source. The spatial resolution of the photoconductor was good enough to provide 75 microm FWHM using a 50 microm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors in particular for the new high brightness synchrotron sources

  12. Status of the digital pixel array detector for protein crystallography

    CERN Document Server

    Datte, P; Beuville, E; Endres, N; Druillole, F; Luo, L; Millaud, J E; Xuong, N H

    1999-01-01

    A two-dimensional photon counting digital pixel array detector is being designed for static and time resolved protein crystallography. The room temperature detector will significantly enhance monochromatic and polychromatic protein crystallographic through-put data rates by more than three orders of magnitude. The detector has an almost infinite photon counting dynamic range and exhibits superior spatial resolution when compared to present crystallographic phosphor imaging plates or phosphor coupled CCD detectors. The detector is a high resistivity N-type Si with a pixel pitch of 150x150 mu m, and a thickness of 300 mu m, and is bump bonded to an application specific integrated circuit. The event driven readout of the detector is based on the column architecture and allows an independent pixel hit rate above 1 million photons/s/pixel. The device provides energy discrimination and sparse data readout which yields minimal dead-time. This type of architecture allows a continuous (frameless) data acquisition, a f...

  13. Single event upset susceptibilities of latchup immune CMOS process programmable gate arrays

    Science.gov (United States)

    Koga, R.; Crain, W. R.; Crawford, K. B.; Hansel, S. J.; Lau, D. D.; Tsubota, T. K.

    Single event upsets (SEU) and latchup susceptibilities of complementary metal oxide semiconductor programmable gate arrays (CMOS PPGA's) were measured at the Lawrence Berkeley Laboratory 88-in. cyclotron facility with Xe (603 MeV), Cu (290 MeV), and Ar (180 MeV) ion beams. The PPGA devices tested were those which may be used in space. Most of the SEU measurements were taken with a newly constructed tester called the Bus Access Storage and Comparison System (BASACS) operating via a Macintosh II computer. When BASACS finds that an output does not match a prerecorded pattern, the state of all outputs, position in the test cycle, and other necessary information is transmitted and stored in the Macintosh. The upset rate was kept between 1 and 3 per second. After a sufficient number of errors are stored, the test is stopped and the total fluence of particles and total errors are recorded. The device power supply current was closely monitored to check for occurrence of latchup. Results of the tests are presented, indicating that some of the PPGA's are good candidates for selected space applications.

  14. Research on influence of energy spectrum response of ICT detector arrays

    International Nuclear Information System (INIS)

    Zhou Rifeng; Gao Fuqiang; Zhang Ping

    2008-01-01

    The energy spectrum response is important characteristic for X-ray ICT detector. But there exist many difficulties to measure these parameters by experiments. The energy spectrum response of CdWO 4 detector was simulated by using the EGSnrc code. Meanwhile the effect of detection efficiency was analyzed by the distribution of accelerator bremsstrahlung spectra and the X-ray spectrum hardening, and some theoretic parameters were offered for the consistent and no-linearity correction of detector arrays. It was applied to ICT image correction, and a satisfying result was obtained. (authors)

  15. Far forward scattering on TOSCA tokamak using a detector array

    International Nuclear Information System (INIS)

    Cote, A.; Evans, D.E.

    1987-01-01

    A gaussian beam from a CW CO 2 , laser is directed across the vertical minor diameter of TOSCA tokamak where it undergoes collective scattering at angles within the beam divergence. Scattered radiation recombines with the unperturbed part of the beam on the detector, generating intensity oscillations whose spatial, temporal, and phase distributions convey information about the strength, scale length, frequency, and propagation direction of the plasma density fluctuations in which they originate. The distribution of these oscillations is measured across the diameter of the probe beam profile, either with a single photoconductive Ge:Hg detector over a sequence of plasma discharges, or with a 12-channel array of Ge:Hg detectors during a single discharge. A model describing counter-rotating waves, such as a poloidal structure encountered twice by the probe beam as it traverses the plasma, is able to furnish a satisfactory fit to the data. Use of the array provides a phase distribution from which the sense of rotation of the waves can be deduced. A dispersion relation with frequencies up to 250 kHz, wavenumbers in the range 60-300 m -1 , and a phase velocity of ≅ 6x10 3 ms -1 is found

  16. Photon Counting Energy Dispersive Detector Arrays for X-ray Imaging.

    Science.gov (United States)

    Iwanczyk, Jan S; Nygård, Einar; Meirav, Oded; Arenson, Jerry; Barber, William C; Hartsough, Neal E; Malakhov, Nail; Wessel, Jan C

    2009-01-01

    The development of an innovative detector technology for photon-counting in X-ray imaging is reported. This new generation of detectors, based on pixellated cadmium telluride (CdTe) and cadmium zinc telluride (CZT) detector arrays electrically connected to application specific integrated circuits (ASICs) for readout, will produce fast and highly efficient photon-counting and energy-dispersive X-ray imaging. There are a number of applications that can greatly benefit from these novel imagers including mammography, planar radiography, and computed tomography (CT). Systems based on this new detector technology can provide compositional analysis of tissue through spectroscopic X-ray imaging, significantly improve overall image quality, and may significantly reduce X-ray dose to the patient. A very high X-ray flux is utilized in many of these applications. For example, CT scanners can produce ~100 Mphotons/mm(2)/s in the unattenuated beam. High flux is required in order to collect sufficient photon statistics in the measurement of the transmitted flux (attenuated beam) during the very short time frame of a CT scan. This high count rate combined with a need for high detection efficiency requires the development of detector structures that can provide a response signal much faster than the transit time of carriers over the whole detector thickness. We have developed CdTe and CZT detector array structures which are 3 mm thick with 16×16 pixels and a 1 mm pixel pitch. These structures, in the two different implementations presented here, utilize either a small pixel effect or a drift phenomenon. An energy resolution of 4.75% at 122 keV has been obtained with a 30 ns peaking time using discrete electronics and a (57)Co source. An output rate of 6×10(6) counts per second per individual pixel has been obtained with our ASIC readout electronics and a clinical CT X-ray tube. Additionally, the first clinical CT images, taken with several of our prototype photon-counting and

  17. X-ray performance of a wafer-scale CMOS flat panel imager for applications in medical imaging and nondestructive testing

    International Nuclear Information System (INIS)

    Cha, Bo Kyung; Jeon, Seongchae; Seo, Chang-Woo

    2016-01-01

    This paper presents a wafer-scale complementary metal-oxide semiconductor (CMOS)-based X-ray flat panel detector for medical imaging and nondestructive testing applications. In this study, our proposed X-ray CMOS flat panel imager has been fabricated by using a 0.35 µm 1-poly/4-metal CMOS process. The pixel size is 100 µm×100 µm and the pixel array format is 1200×1200 pixels, which provide a field-of-view (FOV) of 120mm×120 mm. The 14.3-bit extended counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. The different screens such as thallium-doped CsI (CsI:Tl) and terbium gadolinium oxysulfide (Gd_2O_2S:Tb) scintillators were used as conversion materials for X-rays to visible light photons. The X-ray imaging performance such as X-ray sensitivity as a function of X-ray exposure dose, spatial resolution, image lag and X-ray images of various objects were measured under practical medical and industrial application conditions. This paper results demonstrate that our prototype CMOS-based X-ray flat panel imager has the significant potential for medical imaging and non-destructive testing (NDT) applications with high-resolution and high speed rate.

  18. X-ray performance of a wafer-scale CMOS flat panel imager for applications in medical imaging and nondestructive testing

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Bo Kyung, E-mail: goldrain99@kaist.ac.kr [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Jeon, Seongchae [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Seo, Chang-Woo [Department of Radiological Science, Yonsei University, Gangwon-do 220-710 (Korea, Republic of)

    2016-09-21

    This paper presents a wafer-scale complementary metal-oxide semiconductor (CMOS)-based X-ray flat panel detector for medical imaging and nondestructive testing applications. In this study, our proposed X-ray CMOS flat panel imager has been fabricated by using a 0.35 µm 1-poly/4-metal CMOS process. The pixel size is 100 µm×100 µm and the pixel array format is 1200×1200 pixels, which provide a field-of-view (FOV) of 120mm×120 mm. The 14.3-bit extended counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. The different screens such as thallium-doped CsI (CsI:Tl) and terbium gadolinium oxysulfide (Gd{sub 2}O{sub 2}S:Tb) scintillators were used as conversion materials for X-rays to visible light photons. The X-ray imaging performance such as X-ray sensitivity as a function of X-ray exposure dose, spatial resolution, image lag and X-ray images of various objects were measured under practical medical and industrial application conditions. This paper results demonstrate that our prototype CMOS-based X-ray flat panel imager has the significant potential for medical imaging and non-destructive testing (NDT) applications with high-resolution and high speed rate.

  19. Power and area efficient 4-bit column-level ADC in a CMOS pixel sensor for the ILD vertex detector

    International Nuclear Information System (INIS)

    Zhang, L; Morel, F; Hu-Guo, Ch; Hu, Y

    2013-01-01

    A 48 × 64 pixels prototype CMOS pixel sensor (CPS) integrated with 4-bit column-level, self triggered ADCs for the outer layers of the ILD vertex detector (VTX) was developed and fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation. The ADCs accommodating the pixel read out in a rolling shutter mode complete the conversion by performing a multi-bit/step approximation. The design was optimised for power saving at sampling frequency. The prototype sensor is currently at the stage of being started testing and evaluation. So what is described is based on post simulation results rather than test data. This 4-bit ADC dissipates, at a 3-V supply and 6.25-MS/s sampling rate, 486 μW in its inactive mode, which is by far the most frequent. This value rises to 714 μW in case of the active mode. Its footprint amounts to 35 × 545 μm 2 .

  20. Saturated virtual fluorescence emission difference microscopy based on detector array

    Science.gov (United States)

    Liu, Shaocong; Sun, Shiyi; Kuang, Cuifang; Ge, Baoliang; Wang, Wensheng; Liu, Xu

    2017-07-01

    Virtual fluorescence emission difference microscopy (vFED) has been proposed recently to enhance the lateral resolution of confocal microscopy with a detector array, implemented by scanning a doughnut-shaped pattern. Theoretically, the resolution can be enhanced by around 1.3-fold compared with that in confocal microscopy. For further improvement of the resolving ability of vFED, a novel method is presented utilizing fluorescence saturation for super-resolution imaging, which we called saturated virtual fluorescence emission difference microscopy (svFED). With a point detector array, matched solid and hollow point spread functions (PSF) can be obtained by photon reassignment, and the difference results between them can be used to boost the transverse resolution. Results show that the diffraction barrier can be surpassed by at least 34% compared with that in vFED and the resolution is around 2-fold higher than that in confocal microscopy.

  1. CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

    Science.gov (United States)

    Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

    2011-04-01

    In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

  2. Study and characterization of arrays of detectors for dosimetric verification of radiotherapy, analysis of business solutions

    International Nuclear Information System (INIS)

    Gago Arias, A.; Brualla Gonzalez, L.; Gomez Rodriguez, F.; Gonzalez Castano, D. M.; Pardo Montero, J.; Luna Vega, V.; Mosquera Sueiro, J.; Sanchez Garcia, M.

    2011-01-01

    This paper presents a comparative study of the detector arrays developed by different business houses to the demand for devices that speed up the verification process. Will analyze the effect of spatial response of individual detectors in the measurement of dose distributions, modeling the same and analyzing the ability of the arrays to detect variations in a treatment yield.

  3. Ion traps fabricated in a CMOS foundry

    Energy Technology Data Exchange (ETDEWEB)

    Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2014-07-28

    We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

  4. CMOS pixel development for the ATLAS experiment at HL-LHC

    CERN Document Server

    Rimoldi, Marco; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages, high resistivity wafers for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R$\\&$D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this presentation the challenges for the usage of CMOS pixel...

  5. Trigger and aperture of the surface detector array of the Pierre Auger Observatory

    NARCIS (Netherlands)

    Abraham, J.; Abreu, P.; Aglietta, M.; Ahn, E. J.; Allard, D.; Allekotte, I.; Allen, J.; Alvarez-Muniz, J.; Ambrosio, M.; Anchordoqui, L.; Andringa, S.; Anticic, T.; Anzalone, A.; Aramo, C.; Arganda, E.; Arisaka, K.; Arqueros, F.; Asorey, H.; Assis, P.; Aublin, J.; Ave, M.; Avila, G.; Baecker, T.; Badagnani, D.; Balzer, M.; Barber, K. B.; Barbosa, A. F.; Barroso, S. L. C.; Baughman, B.; Bauleo, P.; Beatty, J. J.; Becker, B. R.; Becker, K. H.; Belletoile, A.; Bellido, J. A.; BenZvi, S.; Berat, C.; Bergmann, T.; Bertou, X.; Biermann, P. L.; Billoir, P.; Blanch-Bigas, O.; Blanco, F.; Blanco, M.; Bleve, C.; Bluemer, H.; Bohacova, M.; Boncioli, D.; Bonifazi, C.; Bonino, R.; Borodai, N.; Brack, J.; Brogueira, P.; Brown, W. C.; Bruijn, R.; Buchholz, P.; Bueno, A.; Burton, R. E.; Busca, N. G.; Caballero-Mora, K. S.; Caramete, L.; Caruso, R.; Castellina, A.; Catalano, O.; Cataldi, G.; Cazon, L.; Cester, R.; Chauvin, J.; Chiavassa, A.; Chinellato, J. A.; Chou, A.; Chudoba, J.; Clay, R. W.; Colombo, E.; Coluccia, M. R.; Conceicao, R.; Contreras, F.; Cook, H.; Cooper, M. J.; Coppens, J.; Cordier, A.; Cotti, U.; Coutu, S.; Covault, C. E.; Creusot, A.; Criss, A.; Cronin, J.; Curutiu, A.; Dagoret-Campagne, S.; Dallier, R.; Daumiller, K.; Dawson, B. R.; de Almeida, R. M.; De Domenico, M.; De Donato, C.; de Jong, S. J.; De La Vega, G.; de Mello Junior, W. J. M.; de Mello Neto, J. R. T.; De Mitri, I.; de Souza, V.; de Vries, K. D.; Decerprit, G.; del Peral, L.; Deligny, O.; Della Selva, A.; Delle Fratte, C.; Dembinski, H.; Di Giulio, C.; Diaz, J. C.; Castro, M. L. Diaz; Diep, P. N.; Dobrigkeit, C.; D'Olivo, J. C.; Dong, P. N.; Dorofeev, A.; dos Anjos, J. C.; Dova, M. T.; D'Urso, D.; Dutan, I.; DuVernois, M. A.; Ebr, J.; Engel, R.; Erdmann, M.; Escobar, C. O.; Etchegoyen, A.; Facal San Luis, P.; Falcke, H.; Farrar, G.; Fauth, A. C.; Fazzini, N.; Ferrero, A.; Fick, B.; Filevich, A.; Filipcic, A.; Fleck, I.; Fliescher, S.; Fracchiolla, C. E.; Fraenkel, E. D.; Froehlich, U.; Fulgione, W.; Gamarra, R. F.; Gambetta, S.; Garcia, B.; Garcia Gamez, D.; Garcia-Pinto, D.; Garrido, X.; Gelmini, G.; Gemmeke, H.; Ghia, P. L.; Giaccari, U.; Giller, M.; Glass, H.; Goggin, L. M.; Gold, M. S.; Golup, G.; Gomez Albarracin, F.; Gomez Berisso, M.; Goncalves, P.; Gonzalez, D.; Gonzalez, J. G.; Gora, D.; Gorgi, A.; Gouffon, P.; Gozzini, S. R.; Grashorn, E.; Grebe, S.; Grigat, M.; Grillo, A. F.; Guardincerri, Y.; Guarino, F.; Guedes, G. P.; Hague, J. D.; Halenka, V.; Hansen, P.; Harari, D.; Harmsma, S.; Harton, J. L.; Haungs, A.; Hebbeker, T.; Heck, D.; Herve, A. E.; Hojvat, C.; Holmes, V. C.; Homola, P.; Hoerandel, J. R.; Horneffer, A.; Hrabovsky, M.; Huege, T.; Hussain, M.; Iarlori, M.; Insolia, A.; Ionita, F.; Italiano, A.; Jiraskova, S.; Kadija, K.; Kaducak, M.; Kampert, K. H.; Karova, T.; Kasper, P.; Kegl, B.; Keilhauer, B.; Keivani, A.; Kelley, J.; Kemp, E.; Kieckhafer, R. M.; Klages, H. O.; Kleifges, M.; Kleinfeller, J.; Knapik, R.; Knapp, J.; Koang, D. -H.; Krieger, A.; Kroemer, O.; Kruppke-Hansen, D.; Kuehn, F.; Kuempel, D.; Kulbartz, K.; Kunka, N.; Kusenko, A.; La Rosa, G.; Lachaud, C.; Lago, B. L.; Lautridou, P.; Leao, M. S. A. B.; Lebrun, D.; Lebrun, P.; Lee, J.; Leigui de Oliveira, M. A.; Lemiere, A.; Letessier-Selvon, A.; Lhenry-Yvon, I.; Lopez, R.; Lopez Aguera, A.; Louedec, K.; Lozano Bahilo, J.; Lucero, A.; Ludwig, M.; Lyberis, H.; Maccarone, M. C.; Macolino, C.; Maldera, S.; Mandat, D.; Mantsch, P.; Mariazzi, A. G.; Marin, V.; Maris, I. C.; Marquez Falcon, H. R.; Marsella, G.; Martello, D.; Martinez Bravo, O.; Mathes, H. J.; Matthews, J.; Matthews, J. A. J.; Matthiae, G.; Maurizio, D.; Mazur, P. O.; McEwen, M.; Medina-Tanco, G.; Melissas, M.; Melo, D.; Menichetti, E.; Menshikov, A.; Meurer, C.; Micanovic, S.; Micheletti, M. I.; Miller, W.; Miramonti, L.; Mollerach, S.; Monasor, M.; Ragaigne, D. Monnier; Montanet, F.; Morales, B.; Morello, C.; Moreno, E.; Moreno, J. C.; Morris, C.; Mostafa, M.; Mueller, S.; Muller, M. A.; Mussa, R.; Navarra, G.; Navarro, J. L.; Navas, S.; Necesal, P.; Nellen, L.; Nhung, P. T.; Nierstenhoefer, N.; Nitz, D.; Nosek, D.; Nozka, L.; Nyklicek, M.; Oehlschlaeger, J.; Olinto, A.; Oliva, P.; Olmos-Gilbaja, V. M.; Ortiz, M.; Pacheco, N.; Selmi-Dei, D. Pakk; Palatka, M.; Pallotta, J.; Palmieri, N.; Parente, G.; Parizot, E.; Parlati, S.; Parra, A.; Parrisius, J.; Parsons, R. D.; Pastor, S.; Paul, T.; Pavlidou, V.; Payet, K.; Pech, M.; Pekala, J.; Pelayo, R.; Pepe, I. M.; Perrone, L.; Pesce, R.; Petermann, E.; Petrera, S.; Petrinca, P.; Petrolini, A.; Petrov, Y.; Petrovic, J.; Pfendner, C.; Piegaia, R.; Pierog, T.; Pimenta, M.; Pirronello, V.; Platino, M.; Ponce, V. H.; Pontz, M.; Privitera, P.; Prouza, M.; Quel, E. J.; Rautenberg, J.; Ravel, O.; Ravignani, D.; Redondo, A.; Revenu, B.; Rezende, F. A. S.; Ridky, J.; Riggi, S.; Risse, M.; Ristori, P.; Riviere, C.; Rizi, V.; Robledo, C.; Rodriguez, G.; Rodriguez Martino, J.; Rodriguez Rojo, J.; Rodriguez-Cabo, I.; Rodriguez-Frias, M. D.; Ros, G.; Rosado, J.; Rossler, T.; Roth, M.; Rouille-d'Orfeuil, B.; Roulet, E.; Rovero, A. C.; Salamida, F.; Salazar, H.; Salina, G.; Sanchez, F.; Santander, M.; Santo, C. E.; Santo, E.; Santos, E. M.; Sarazin, F.; Sarkar, S.; Sato, R.; Scharf, N.; Scherini, V.; Schieler, H.; Schiffer, P.; Schmidt, A.; Schmidt, F.; Schmidt, T.; Scholten, O.; Schoorlemmer, H.; Schovancova, J.; Schovanek, P.; Schroeder, F.; Schulte, S.; Schuessler, F.; Schuster, D.; Sciutto, S. J.; Scuderi, M.; Segreto, A.; Semikoz, D.; Settimo, M.; Shellard, R. C.; Sidelnik, I.; Siffert, B. B.; Sigl, G.; Smialkowski, A.; Smida, R.; Snow, G. R.; Sommers, P.; Sorokin, J.; Spinka, H.; Squartini, R.; Stasielak, J.; Stephan, M.; Strazzeri, E.; Stutz, A.; Suarez, F.; Suomijarvi, T.; Supanitsky, A. D.; Susa, T.; Sutherland, M. S.; Swain, J.; Szadkowski, Z.; Tamashiro, A.; Tamburro, A.; Tapia, A.; Tarutina, T.; Tascau, O.; Tcaciuc, R.; Tcherniakhovski, D.; Tegolo, D.; Thao, N. T.; Thomas, D.; Tiffenberg, J.; Timmermans, C.; Tkaczyk, W.; Peixoto, C. J. Todero; Tome, B.; Tonachini, A.; Travnicek, P.; Tridapalli, D. B.; Tristram, G.; Trovato, E.; Tueros, M.; Ulrich, R.; Unger, M.; Urban, M.; Valdes Galicia, J. F.; Valino, I.; Valore, L.; van den Berg, A. M.; Vazquez, J. R.; Vazquez, R. A.; Veberic, D.; Venters, T.; Verzi, V.; Videla, M.; Villasenor, L.; Vorobiov, S.; Voyvodic, L.; Wahlberg, H.; Wahrlich, P.; Wainberg, O.; Warner, D.; Watson, A. A.; Westerhoff, S.; Whelan, B. J.; Wieczorek, G.; Wiencke, L.; Wilczynska, B.; Wilczynski, H.; Williams, C.; Winchen, T.; Winnick, M. G.; Wundheiler, B.; Yamamoto, T.; Younk, P.; Yuan, G.; Yushkov, A.; Zas, E.; Zavrtanik, D.; Zavrtanik, M.; Zaw, I.; Zepeda, A.; Ziolkowski, M.

    2010-01-01

    The surface detector array of the Pierre Auger Observatory consists of 1600 water-Cherenkov detectors, for the study of extensive air showers (EAS) generated by ultra-high-energy cosmic rays. We describe the trigger hierarchy, from the identification of candidate showers at the level of a single

  6. MUST: A silicon strip detector array for radioactive beam experiments

    International Nuclear Information System (INIS)

    Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.; Marechal, F.; Ottini, S.; Alamanos, N.; Barbier, A.; Beaumel, D.; Bonnereau, B.; Charlet, D.; Clavelin, J.F.; Courtat, P.; Delbourgo-Salvador, P.; Douet, R.; Engrand, M.; Ethvignot, T.; Gillibert, A.; Khan, E.; Lapoux, V.; Lagoyannis, A.; Lavergne, L.; Lebon, S.; Lelong, P.; Lesage, A.; Le Ven, V.; Lhenry, I.; Martin, J.M.; Musumarra, A.; Pita, S.; Petizon, L.; Pollacco, E.; Pouthas, J.; Richard, A.; Rougier, D.; Santonocito, D.; Scarpaci, J.A.; Sida, J.L.; Soulet, C.; Stutzmann, J.S.; Suomijaervi, T.; Szmigiel, M.; Volkov, P.; Voltolini, G.

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated

  7. High density processing electronics for superconducting tunnel junction x-ray detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Warburton, W.K., E-mail: bill@xia.com [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Harris, J.T. [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Friedrich, S. [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States)

    2015-06-01

    Superconducting tunnel junctions (STJs) are excellent soft x-ray (100–2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays – currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I–V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

  8. Isotropic gates in large gamma detector arrays versus angular distributions

    International Nuclear Information System (INIS)

    Iacob, V.E.; Duchene, G.

    1997-01-01

    The quality of the angular distribution information extracted from high-fold gamma-gamma coincidence events is analyzed. It is shown that a correct quasi-isotropic gate setting, available at the modern large gamma-ray detector arrays, essentially preserves the quality of the angular information. (orig.)

  9. Performance of a thermal imager employing a hybrid pyroelectric detector array with MOSFET readout

    International Nuclear Information System (INIS)

    Watton, R.; Mansi, M.V.

    1988-01-01

    A thermal imager employing a two-dimensional hybrid array of pyroelectric detectors with MOSFET readout has been built. The design and theoretical performance of the detector are discussed, and the results of performance measurements are presented. 8 references

  10. Study on single-channel signals of water Cherenkov detector array for the LHAASO project

    Energy Technology Data Exchange (ETDEWEB)

    Li, H.C., E-mail: lihuicai@ihep.ac.cn [University of Nankai, Tianjin 300071 (China); Yao, Z.G.; Chen, M.J. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Yu, C.X. [University of Nankai, Tianjin 300071 (China); Zha, M.; Wu, H.R.; Gao, B.; Wang, X.J. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Liu, J.Y.; Liao, W.Y. [University of Nankai, Tianjin 300071 (China); Huang, D.Z. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2017-05-11

    The Large High Altitude Air Shower Observatory (LHAASO) is planned to be built at Daocheng, Sichuan Province, China. The water Cherenkov detector array (WCDA), with an area of 78,000 m{sup 2} and capacity of 350,000 tons of purified water, is one of the major components of the LHAASO project. A 9-cell detector prototype array has been built at the Yangbajing site, Tibet, China to comprehensively understand the water Cherenkov technique and investigate the engineering issues of WCDA. In this paper, the rate and charge distribution of single-channel signals are evaluated using a full detail Monte Carlo simulation. The results are discussed and compared with the results obtained with prototype array.

  11. An introduction to deep submicron CMOS for vertex applications

    CERN Document Server

    Campbell, M; Cantatore, E; Faccio, F; Heijne, Erik H M; Jarron, P; Santiard, Jean-Claude; Snoeys, W; Wyllie, K

    2001-01-01

    Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.

  12. Advanced ACTPol Cryogenic Detector Arrays and Readout

    Science.gov (United States)

    Henderson, S. W.; Allison, R.; Austermann, J.; Baildon, T.; Battaglia, N.; Beall, J. A.; Becker, D.; De Bernardis, F.; Bond, J. R.; Calabrese, E.; Choi, S. K.; Coughlin, K. P.; Crowley, K. T.; Datta, R.; Devlin, M. J.; Duff, S. M.; Dunkley, J.; Dünner, R.; van Engelen, A.; Gallardo, P. A.; Grace, E.; Hasselfield, M.; Hills, F.; Hilton, G. C.; Hincks, A. D.; Hloẑek, R.; Ho, S. P.; Hubmayr, J.; Huffenberger, K.; Hughes, J. P.; Irwin, K. D.; Koopman, B. J.; Kosowsky, A. B.; Li, D.; McMahon, J.; Munson, C.; Nati, F.; Newburgh, L.; Niemack, M. D.; Niraula, P.; Page, L. A.; Pappas, C. G.; Salatino, M.; Schillaci, A.; Schmitt, B. L.; Sehgal, N.; Sherwin, B. D.; Sievers, J. L.; Simon, S. M.; Spergel, D. N.; Staggs, S. T.; Stevens, J. R.; Thornton, R.; Van Lanen, J.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

    2016-08-01

    Advanced ACTPol is a polarization-sensitive upgrade for the 6 m aperture Atacama Cosmology Telescope, adding new frequencies and increasing sensitivity over the previous ACTPol receiver. In 2016, Advanced ACTPol will begin to map approximately half the sky in five frequency bands (28-230 GHz). Its maps of primary and secondary cosmic microwave background anisotropies—imaged in intensity and polarization at few arcminute-scale resolution—will enable precision cosmological constraints and also a wide array of cross-correlation science that probes the expansion history of the universe and the growth of structure via gravitational collapse. To accomplish these scientific goals, the Advanced ACTPol receiver will be a significant upgrade to the ACTPol receiver, including four new multichroic arrays of cryogenic, feedhorn-coupled AlMn transition edge sensor polarimeters (fabricated on 150 mm diameter wafers); a system of continuously rotating meta-material silicon half-wave plates; and a new multiplexing readout architecture which uses superconducting quantum interference devices and time division to achieve a 64-row multiplexing factor. Here we present the status and scientific goals of the Advanced ACTPol instrument, emphasizing the design and implementation of the Advanced ACTPol cryogenic detector arrays.

  13. A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors

    International Nuclear Information System (INIS)

    Han Ye; Li Quanliang; Shi Cong; Wu Nanjian

    2013-01-01

    This paper presents a high-speed column-parallel cyclic analog-to-digital converter (ADC) for a CMOS image sensor. A correlated double sampling (CDS) circuit is integrated in the ADC, which avoids a stand-alone CDS circuit block. An offset cancellation technique is also introduced, which reduces the column fixed-pattern noise (FPN) effectively. One single channel ADC with an area less than 0.02 mm 2 was implemented in a 0.13 μm CMOS image sensor process. The resolution of the proposed ADC is 10-bit, and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively. The power consumption from 3.3 V supply is only 0.66 mW. An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels. The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors. (semiconductor integrated circuits)

  14. A new ion detector array and digital-signal-processor-based interface

    International Nuclear Information System (INIS)

    Langstaff, D.P.; McGinnity, T.M.; Forbes, D.M.; Birkinshaw, K.; Lawton, M.W.

    1994-01-01

    A new one-dimensional ion detector array on a silicon chip has been developed for use in mass spectrometry. It is much smaller and simpler than electro-optical arrays currently in use and in addition has a higher resolution and a zero noise level. The array consists of a one-dimensional array of metal strips (electrodes) with a pitch of 25 μm on the top surface of a silicon chip, each electrode having its own charge pulse sensor, 8-bit counter and control/interface circuitry. The chip is mounted on a ceramic substrate and is preceded by a micro-channel plate electron multiplier. Chips are butted to give a longer array. Test results show a stable operating region. A digital-signal-processor-based interface is described, which controls the mode of operation and reads the accumulated array data at the maximum rate to avoid counter overflow. (author)

  15. A new ion detector array and digital-signal-processor-based interface

    Energy Technology Data Exchange (ETDEWEB)

    Langstaff, D.P.; McGinnity, T.M.; Forbes, D.M.; Birkinshaw, K. (University Coll. of Wales, Aberystwyth (United Kingdom). Dept. of Physics); Lawton, M.W. (University of Wales Aberystwyth (United Kingdom). Dept. of Computer Science)

    1994-04-01

    A new one-dimensional ion detector array on a silicon chip has been developed for use in mass spectrometry. It is much smaller and simpler than electro-optical arrays currently in use and in addition has a higher resolution and a zero noise level. The array consists of a one-dimensional array of metal strips (electrodes) with a pitch of 25 [mu]m on the top surface of a silicon chip, each electrode having its own charge pulse sensor, 8-bit counter and control/interface circuitry. The chip is mounted on a ceramic substrate and is preceded by a micro-channel plate electron multiplier. Chips are butted to give a longer array. Test results show a stable operating region. A digital-signal-processor-based interface is described, which controls the mode of operation and reads the accumulated array data at the maximum rate to avoid counter overflow. (author).

  16. CMOS Pixel Development for the ATLAS Experiment at HL-LHC

    CERN Document Server

    Ristic, Branislav; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages (HV-MAPS) and high resistivity wafers (HR-MAPS) for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixels with monolithic or hybrid designs concerning their suitability for high rate, fast timing and high radiation operation at LHC. This paper will discuss recent results on the main candidate technologies and the current development towards a monolithic solution.

  17. Large arrays of dual-polarized multichroic TES detectors for CMB measurements with the SPT-3G receiver

    Science.gov (United States)

    Posada, Chrystian M.; Ade, Peter A. R.; Anderson, Adam J.; Avva, Jessica; Ahmed, Zeeshan; Arnold, Kam S.; Austermann, Jason; Bender, Amy N.; Benson, Bradford A.; Bleem, Lindsey; Byrum, Karen; Carlstrom, John E.; Carter, Faustin W.; Chang, Clarence; Cho, Hsiao-Mei; Cukierman, Ari; Czaplewski, David A.; Ding, Junjia; Divan, Ralu N. S.; de Haan, Tijmen; Dobbs, Matt; Dutcher, Daniel; Everett, Wenderline; Gannon, Renae N.; Guyser, Robert J.; Halverson, Nils W.; Harrington, Nicholas L.; Hattori, Kaori; Henning, Jason W.; Hilton, Gene C.; Holzapfel, William L.; Huang, Nicholas; Irwin, Kent D.; Jeong, Oliver; Khaire, Trupti; Korman, Milo; Kubik, Donna L.; Kuo, Chao-Lin; Lee, Adrian T.; Leitch, Erik M.; Lendinez Escudero, Sergi; Meyer, Stephan S.; Miller, Christina S.; Montgomery, Joshua; Nadolski, Andrew; Natoli, Tyler J.; Nguyen, Hogan; Novosad, Valentyn; Padin, Stephen; Pan, Zhaodi; Pearson, John E.; Rahlin, Alexandra; Reichardt, Christian L.; Ruhl, John E.; Saliwanchik, Benjamin; Shirley, Ian; Sayre, James T.; Shariff, Jamil A.; Shirokoff, Erik D.; Stan, Liliana; Stark, Antony A.; Sobrin, Joshua; Story, Kyle; Suzuki, Aritoki; Tang, Qing Yang; Thakur, Ritoban B.; Thompson, Keith L.; Tucker, Carole E.; Vanderlinde, Keith; Vieira, Joaquin D.; Wang, Gensheng; Whitehorn, Nathan; Yefremenko, Volodymyr; Yoon, Ki Won

    2016-07-01

    Detectors for cosmic microwave background (CMB) experiments are now essentially background limited, so a straightforward alternative to improve sensitivity is to increase the number of detectors. Large arrays of multichroic pixels constitute an economical approach to increasing the number of detectors within a given focal plane area. Here, we present the fabrication of large arrays of dual-polarized multichroic transition-edge-sensor (TES) bolometers for the South Pole Telescope third-generation CMB receiver (SPT-3G). The complete SPT-3G receiver will have 2690 pixels, each with six detectors, allowing for individual measurement of three spectral bands (centered at 95 GHz, 150 GHz and 220 GHz) in two orthogonal polarizations. In total, the SPT-3G focal plane will have 16140 detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a niobium microstrip transmission line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed to the respective Ti/Au TES sensors. Detectors are read out using a 64x frequency domain multiplexing (fMux) scheme. The microfabrication of the SPT-3G detector arrays involves a total of 18 processes, including 13 lithography steps. Together with the fabrication process, the effect of processing on the Ti/Au TES's Tc is discussed. In addition, detectors fabricated with Ti/Au TES films with Tc between 400 mK 560 mK are presented and their thermal characteristics are evaluated. Optical characterization of the arrays is presented as well, indicating that the response of the detectors is in good agreement with the design values for all three spectral bands (95 GHz, 150 GHz, and 220 GHz). The measured optical efficiency of the detectors is between 0.3 and 0.8. Results discussed here are extracted from a batch of research of development wafers used to develop the baseline process for the fabrication of the arrays of detectors to be deployed with the SPT-3G receiver. Results from

  18. Charge sharing and charge loss in a cadmium-zinc-telluride fine-pixel detector array

    International Nuclear Information System (INIS)

    Gaskin, J.A.; Sharma, D.P.; Ramsey, B.D.

    2003-01-01

    Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a cadmium-zinc-telluride multi-pixel detector is ideal for hard X-ray astrophysical observation. As part of on-going research at MSFC to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750 μm pitch), 1 mm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300 μm pitch). Future work will enable us to compare the simulated results for the finer array to measured values

  19. Design and analysis of a dual mode CMOS field programmable analog array

    International Nuclear Information System (INIS)

    Cheng Xiaoyan; Yang Haigang; Yin Tao; Wu Qisong; Zhang Hongfeng; Liu Fei

    2014-01-01

    This paper presents a novel field-programmable analog array (FPAA) architecture featuring a dual mode including discrete-time (DT) and continuous-time (CT) operation modes, along with a highly routable connection boxes (CBs) based interconnection lattice. The dual mode circuit for the FPAA is capable of achieving targeted optimal performance in different applications. The architecture utilizes routing switches in a CB not only for the signal interconnection purpose but also for control of the electrical charge transfer required in switched-capacitor circuits. This way, the performance of the circuit in either mode shall not be hampered with adding of programmability. The proposed FPAA is designed and implemented in a 0.18 μm standard CMOS process with a 3.3 V supply voltage. The result from post-layout simulation shows that a maximum bandwidth of 265 MHz through the interconnection network is achieved. The measured results from demonstrated examples show that the maximum signal bandwidth of up to 2 MHz in CT mode is obtained with the spurious free dynamic range of 54 dB, while the signal processing precision in DT mode reaches 96.4%. (semiconductor integrated circuits)

  20. An MLC calibration method using a detector array

    International Nuclear Information System (INIS)

    Simon, Thomas A.; Kahler, Darren; Simon, William E.; Fox, Christopher; Li, Jonathan; Palta, Jatinder; Liu, Chihray

    2009-01-01

    Purpose: The authors have developed a quantitative calibration method for a multileaf collimator (MLC) which measures individual leaf positions relative to the MLC backup jaw on an Elekta Synergy linear accelerator. Methods: The method utilizes a commercially available two-axis detector array (Profiler 2; Sun Nuclear Corporation, Melbourne, FL). To calibrate the MLC bank, its backup jaw is positioned at the central axis and the opposing jaw is retracted to create a half-beam configuration. The position of the backup jaws field edge is then measured with the array to obtain what is termed the radiation defined reference line. The positions of the individual leaf ends relative to this reference line are then inferred by the detector response in the leaf end penumbra. Iteratively adjusting and remeasuring the leaf end positions to within specifications completes the calibration. Using the backup jaw as a reference for the leaf end positions is based on three assumptions: (1) The leading edge of an MLC leaf bank is parallel to its backup jaw's leading edge, (2) the backup jaw position is reproducible, and (3) the measured radiation field edge created by each leaf end is representative of that leaf's position. Data from an electronic portal imaging device (EPID) were used in a similar analysis to check the results obtained with the array. Results: The relative leaf end positions measured with the array differed from those measured with the EPID by an average of 0.11 ±0.09 mm per leaf. The maximum leaf positional change measured with the Profiler 2 over a 3 month period was 0.51 mm. A leaf positional accuracy of ±0.4 mm is easily attainable through the iterative calibration process. The method requires an average of 40 min to measure both leaf banks. Conclusions: This work demonstrates that the Profiler 2 is an effective tool for efficient and quantitative MLC quality assurance and calibration.

  1. An MLC calibration method using a detector array

    Energy Technology Data Exchange (ETDEWEB)

    Simon, Thomas A.; Kahler, Darren; Simon, William E.; Fox, Christopher; Li, Jonathan; Palta, Jatinder; Liu, Chihray [Department of Nuclear and Radiological Engineering, University of Florida, 202 Nuclear Science Building, Gainesville, Florida 32611-8300 (United States); Sun Nuclear Corporation, 425-A Pineda Court, Melbourne, Florida 32940 (United States) and Department of Radiation Oncology, Health Science Center, University of Florida, P.O. Box 100385, Gainesville, Florida 32610-0385 (United States); Department of Radiation Oncology, Health Science Center, University of Florida, P.O. Box 100385, Gainesville, Florida 32610-0385 (United States); Sun Nuclear Corporation, 425-A Pineda Court, Melbourne, Florida 32940 (United States); Department of Radiation Oncology, Tulane University, 1415 Tulane Ave, HC65, New Orleans, Louisiana 70112 (United States); Department of Radiation Oncology, Health Science Center, University of Florida, P.O. Box 100385, Gainesville, Florida 32610-0385 (United States)

    2009-10-15

    Purpose: The authors have developed a quantitative calibration method for a multileaf collimator (MLC) which measures individual leaf positions relative to the MLC backup jaw on an Elekta Synergy linear accelerator. Methods: The method utilizes a commercially available two-axis detector array (Profiler 2; Sun Nuclear Corporation, Melbourne, FL). To calibrate the MLC bank, its backup jaw is positioned at the central axis and the opposing jaw is retracted to create a half-beam configuration. The position of the backup jaws field edge is then measured with the array to obtain what is termed the radiation defined reference line. The positions of the individual leaf ends relative to this reference line are then inferred by the detector response in the leaf end penumbra. Iteratively adjusting and remeasuring the leaf end positions to within specifications completes the calibration. Using the backup jaw as a reference for the leaf end positions is based on three assumptions: (1) The leading edge of an MLC leaf bank is parallel to its backup jaw's leading edge, (2) the backup jaw position is reproducible, and (3) the measured radiation field edge created by each leaf end is representative of that leaf's position. Data from an electronic portal imaging device (EPID) were used in a similar analysis to check the results obtained with the array. Results: The relative leaf end positions measured with the array differed from those measured with the EPID by an average of 0.11 {+-}0.09 mm per leaf. The maximum leaf positional change measured with the Profiler 2 over a 3 month period was 0.51 mm. A leaf positional accuracy of {+-}0.4 mm is easily attainable through the iterative calibration process. The method requires an average of 40 min to measure both leaf banks. Conclusions: This work demonstrates that the Profiler 2 is an effective tool for efficient and quantitative MLC quality assurance and calibration.

  2. Performance of A Compact Multi-crystal High-purity Germanium Detector Array for Measuring Coincident Gamma-ray Emissions

    Energy Technology Data Exchange (ETDEWEB)

    Howard, Chris [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Daigle, Stephen [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Buckner, Matt [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Erikson, Luke E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Runkle, Robert C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Stave, Sean C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Champagne, Art [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Cooper, Andrew [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Downen, Lori [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Glasgow, Brian D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kelly, Keegan [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Sallaska, Anne [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States)

    2015-02-18

    The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the 14N(p,γ)15O* reaction for several transition energies at an effective center of mass energy of 163 keV. Owing to the segmented nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within the uncertainties with the past measurements. Details of the analysis and detector performance will be presented.

  3. Performance of a compact multi-crystal high-purity germanium detector array for measuring coincident gamma-ray emissions

    Energy Technology Data Exchange (ETDEWEB)

    Howard, Chris; Daigle, Stephen; Buckner, Matt [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States); Erikson, Luke E.; Runkle, Robert C. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Stave, Sean C., E-mail: Sean.Stave@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Champagne, Arthur E.; Cooper, Andrew; Downen, Lori [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States); Glasgow, Brian D. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Kelly, Keegan; Sallaska, Anne [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States)

    2015-05-21

    The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the {sup 14}N(p,γ){sup 15}O{sup ⁎} reaction for several transition energies at an effective center-of-mass energy of 163 keV. Owing to the granular nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within their uncertainties with the past measurements. Details of the analysis and detector performance are presented.

  4. Infrared detectors and arrays; Proceedings of the Meeting, Orlando, FL, Apr. 6, 7, 1988

    International Nuclear Information System (INIS)

    Dereniak, E.L.

    1988-01-01

    The papers contained in this volume provide an overview of recent advances in theoretical and experimental research related to IR detector materials and arrays. The major subject areas covered include IR Schottky barrier silicide arrays, HdCdTe developments, SPRITE technology, superlattice or bandgap-engineered devices, extrinsic silicon technology, indium antimonide technology, and pyroelectric arrays. Papers are presented on time division multiplexed time delay integration, spatial noise in staring IR focal plane arrays, pyroelectrics in a harsh environment, and testing of focal plane arrays

  5. Fully Integrated Linear Single Photon Avalanche Diode (SPAD) Array with Parallel Readout Circuit in a Standard 180 nm CMOS Process

    Science.gov (United States)

    Isaak, S.; Bull, S.; Pitter, M. C.; Harrison, Ian.

    2011-05-01

    This paper reports on the development of a SPAD device and its subsequent use in an actively quenched single photon counting imaging system, and was fabricated in a UMC 0.18 μm CMOS process. A low-doped p- guard ring (t-well layer) encircling the active area to prevent the premature reverse breakdown. The array is a 16×1 parallel output SPAD array, which comprises of an active quenched SPAD circuit in each pixel with the current value being set by an external resistor RRef = 300 kΩ. The SPAD I-V response, ID was found to slowly increase until VBD was reached at excess bias voltage, Ve = 11.03 V, and then rapidly increase due to avalanche multiplication. Digital circuitry to control the SPAD array and perform the necessary data processing was designed in VHDL and implemented on a FPGA chip. At room temperature, the dark count was found to be approximately 13 KHz for most of the 16 SPAD pixels and the dead time was estimated to be 40 ns.

  6. Temperature Sensors Integrated into a CMOS Image Sensor

    NARCIS (Netherlands)

    Abarca Prouza, A.N.; Xie, S.; Markenhof, Jules; Theuwissen, A.J.P.

    2017-01-01

    In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is needed. The test image sensor consists of

  7. SU-D-206-06: Task-Specific Optimization of Scintillator Thickness for CMOS-Detector Based Cone-Beam Breast CT

    Energy Technology Data Exchange (ETDEWEB)

    Vedantham, S; Shrestha, S; Shi, L; Vijayaraghavan, G; Karellas, A [University of Massachusetts Medical School, Worcester, MA (United States)

    2016-06-15

    Purpose: To optimize the cesium iodide (CsI:Tl) scintillator thickness in a complimentary metal-oxide semiconductor (CMOS)-based detector for use in dedicated cone-beam breast CT. Methods: The imaging task considered was the detection of a microcalcification cluster comprising six 220µm diameter calcium carbonate spheres, arranged in the form of a regular pentagon with 2 mm spacing on its sides and a central calcification, similar to that in ACR-recommended mammography accreditation phantom, at a mean glandular dose of 4.5 mGy. Generalized parallel-cascades based linear systems analysis was used to determine Fourier-domain image quality metrics in reconstructed object space, from which the detectability index inclusive of anatomical noise was determined for a non-prewhitening numerical observer. For 300 projections over 2π, magnification-associated focal-spot blur, Monte Carlo derived x-ray scatter, K-fluorescent emission and reabsorption within CsI:Tl, CsI:Tl quantum efficiency and optical blur, fiberoptic plate transmission efficiency and blur, CMOS quantum efficiency, pixel aperture function and additive noise, and filtered back-projection to isotropic 105µm voxel pitch with bilinear interpolation were modeled. Imaging geometry of a clinical prototype breast CT system, a 60 kV Cu/Al filtered x-ray spectrum from 0.3 mm focal spot incident on a 14 cm diameter semi-ellipsoidal breast were used to determine the detectability index for 300–600 µm thick (75µm increments) CsI:Tl. The CsI:Tl thickness that maximized the detectability index was considered optimal. Results: The limiting resolution (10% modulation transfer function, MTF) progressively decreased with increasing CsI:Tl thickness. The zero-frequency detective quantum efficiency, DQE(0), in projection space increased with increasing CsI:Tl thickness. The maximum detectability index was achieved with 525µm thick CsI:Tl scintillator. Reduced MTF at mid-to-high frequencies for 600µm thick CsI:Tl lowered

  8. A 32-channel, 025 mum CMOS ASIC for the readout of the silicon drift detectors of the ALICE experiment

    CERN Document Server

    Mazza, G; Anghinolfi, F; Martínez, M I; Rivetti, A; Rotondo, F

    2004-01-01

    In this paper we present a 32 channel ASIC prototype for the readout of the silicon drift detectors (SDDs) of the ALICE experiment. The ASIC integrates on the same substrate 32 transimpedance amplifiers, a 32 x 256 cell analogue memory and 16 successive approximation 10 bit A/D converters. The circuit amplifies and samples at 40 MS/s the input signal in a continuous way. When an external trigger signal validates the acquisition, the sampling is stopped and the data are digitized at lower speed (0.5 MS/s). The chip has been designed and fabricated in a commercial 0.25 mum CMOS technology. It has been extensively tested both on a bench and connected with a detector in several beam tests. In this paper both design issues and test results are presented. The radiation tolerance of the design has been increased by special layout techniques. Total dose irradiation tests are also presented.

  9. EUV high resolution imager on-board solar orbiter: optical design and detector performances

    Science.gov (United States)

    Halain, J. P.; Mazzoli, A.; Rochus, P.; Renotte, E.; Stockman, Y.; Berghmans, D.; BenMoussa, A.; Auchère, F.

    2017-11-01

    The EUV high resolution imager (HRI) channel of the Extreme Ultraviolet Imager (EUI) on-board Solar Orbiter will observe the solar atmospheric layers at 17.4 nm wavelength with a 200 km resolution. The HRI channel is based on a compact two mirrors off-axis design. The spectral selection is obtained by a multilayer coating deposited on the mirrors and by redundant Aluminum filters rejecting the visible and infrared light. The detector is a 2k x 2k array back-thinned silicon CMOS-APS with 10 μm pixel pitch, sensitive in the EUV wavelength range. Due to the instrument compactness and the constraints on the optical design, the channel performance is very sensitive to the manufacturing, alignments and settling errors. A trade-off between two optical layouts was therefore performed to select the final optical design and to improve the mirror mounts. The effect of diffraction by the filter mesh support and by the mirror diffusion has been included in the overall error budget. Manufacturing of mirror and mounts has started and will result in thermo-mechanical validation on the EUI instrument structural and thermal model (STM). Because of the limited channel entrance aperture and consequently the low input flux, the channel performance also relies on the detector EUV sensitivity, readout noise and dynamic range. Based on the characterization of a CMOS-APS back-side detector prototype, showing promising results, the EUI detector has been specified and is under development. These detectors will undergo a qualification program before being tested and integrated on the EUI instrument.

  10. Past and future detector arrays for complete event reconstruction in heavy-ion reactions

    Science.gov (United States)

    Cardella, G.; Acosta, L.; Auditore, L.; Boiano, C.; Castoldi, A.; D'Andrea, M.; De Filippo, E.; Dell'Aquila, D.; De Luca, S.; Fichera, F.; Giudice, N.; Gnoffo, B.; Grimaldi, A.; Guazzoni, C.; Lanzalone, G.; Librizzi, F.; Lombardo, I.; Maiolino, C.; Maffesanti, S.; Martorana, N. S.; Norella, S.; Pagano, A.; Pagano, E. V.; Papa, M.; Parsani, T.; Passaro, G.; Pirrone, S.; Politi, G.; Previdi, F.; Quattrocchi, L.; Rizzo, F.; Russotto, P.; Saccà, G.; Salemi, G.; Sciliberto, D.; Trifirò, A.; Trimarchi, M.; Vigilante, M.

    2017-11-01

    Complex and more and more complete detector arrays have been developed in the last two decades, or are in advanced design stage, in different laboratories. Such arrays are necessary to fully characterize nuclear reactions induced by stable and exotic beams. The need for contemporary detection of charged particles, and/or γ -rays, and/or neutrons, has been stressed in many fields of nuclear structure and reaction dynamics, with particular attention to the improvement of both high angular and energy resolution. Some examples of detection systems adapted to various energy ranges is discussed. Emphasis is given to the possible update of relatively old 4π detectors with new electronics and new detection methods.

  11. Past and future detector arrays for complete event reconstruction in heavy-ion reactions

    International Nuclear Information System (INIS)

    Cardella, G.; Acosta, L.; Auditore, L.

    2016-01-01

    Complex and more and more complete detector arrays have been developed in the last two decades, or are in advanced design stage, in different laboratories. Such arrays are necessary to fully characterize nuclear reactions induced by stable and exotic beams. The need for contemporary detection of charged particles, and/or γ-rays, and/or neutrons, has been stressed in many fields of nuclear structure and reaction dynamics, with particular attention to the improvement of both high angular and energy resolution. Some examples of detection systems adapted to various energy ranges is discussed. Emphasis is given to the possible update of relatively old 4π detectors with new electronics and new detection methods.

  12. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    Science.gov (United States)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  13. 3D circuit integration for Vertex and other detectors

    Energy Technology Data Exchange (ETDEWEB)

    Yarema, Ray; /Fermilab

    2007-09-01

    High Energy Physics continues to push the technical boundaries for electronics. There is no area where this is truer than for vertex detectors. Lower mass and power along with higher resolution and radiation tolerance are driving forces. New technologies such as SOI CMOS detectors and three dimensional (3D) integrated circuits offer new opportunities to meet these challenges. The fundamentals for SOI CMOS detectors and 3D integrated circuits are discussed. Examples of each approach for physics applications are presented. Cost issues and ways to reduce development costs are discussed.

  14. Four-layer DOI PET detectors using a multi-pixel photon counter array and the light sharing method

    Energy Technology Data Exchange (ETDEWEB)

    Nishikido, Fumihiko, E-mail: funis@nirs.go.jp; Inadama, Naoko; Yoshida, Eiji; Murayama, Hideo; Yamaya, Taiga

    2013-11-21

    Silicon photomultipliers (SiPMs) provide many advantages for PET detectors, such as their high internal gain, high photon detection efficiency and insensitivity to magnetic fields. The number of detectable scintillation photons of SiPMs, however, is limited by the number of microcells. Therefore, pulse height of PET detectors using SiPMs is saturated when large numbers of scintillation photons enter the SiPM pixels. On the other hand, we previously presented a depth-of-interaction (DOI) encoding method that is based on the light sharing method. Since our encoding method detects scintillation photons with multiple readout pixels, the saturation effect can be suppressed. We constructed two prototype four-layer DOI detectors using a SiPM array and evaluated their performances. The two prototype detectors consisted of four layers of a 6×6 array of Lu{sub 2(1−x)}Y{sub 2x}SiO{sub 5} (LYSO) crystals and a SiPM (multi-pixel photon detector, MPPC, Hamamatsu Photonics K.K.) array of 4×4 pixels. The size of each LYSO crystal element was 1.46 mm×1.46 mm×4.5 mm and all surfaces of the crystal elements were chemically etched. We used two types of MPPCs. The first one had 3600 microcells and high photon detection efficiency (PDE). The other one had 14,400 microcells and lower PDE. In the evaluation experiment, all the crystals of the detector using the MPPC which had the high PDE were clearly identified. The respective energy and timing resolutions of lower than 15% and 1.0 ns were achieved for each crystal element. No saturation of output signals was observed in the 511 keV energy region due to suppression of the saturation effect by detecting scintillation photons with several MPPC pixels by the light sharing method. -- Highlights: •We constructed and evaluated four-layer DOI detectors by the light sharing method using a MPPC array. •The detectors using two types of the MPPC array were compared. •The energy and timing resolutions of lower than 15% and 1.0 ns were

  15. Four-layer DOI PET detectors using a multi-pixel photon counter array and the light sharing method

    International Nuclear Information System (INIS)

    Nishikido, Fumihiko; Inadama, Naoko; Yoshida, Eiji; Murayama, Hideo; Yamaya, Taiga

    2013-01-01

    Silicon photomultipliers (SiPMs) provide many advantages for PET detectors, such as their high internal gain, high photon detection efficiency and insensitivity to magnetic fields. The number of detectable scintillation photons of SiPMs, however, is limited by the number of microcells. Therefore, pulse height of PET detectors using SiPMs is saturated when large numbers of scintillation photons enter the SiPM pixels. On the other hand, we previously presented a depth-of-interaction (DOI) encoding method that is based on the light sharing method. Since our encoding method detects scintillation photons with multiple readout pixels, the saturation effect can be suppressed. We constructed two prototype four-layer DOI detectors using a SiPM array and evaluated their performances. The two prototype detectors consisted of four layers of a 6×6 array of Lu 2(1−x) Y 2x SiO 5 (LYSO) crystals and a SiPM (multi-pixel photon detector, MPPC, Hamamatsu Photonics K.K.) array of 4×4 pixels. The size of each LYSO crystal element was 1.46 mm×1.46 mm×4.5 mm and all surfaces of the crystal elements were chemically etched. We used two types of MPPCs. The first one had 3600 microcells and high photon detection efficiency (PDE). The other one had 14,400 microcells and lower PDE. In the evaluation experiment, all the crystals of the detector using the MPPC which had the high PDE were clearly identified. The respective energy and timing resolutions of lower than 15% and 1.0 ns were achieved for each crystal element. No saturation of output signals was observed in the 511 keV energy region due to suppression of the saturation effect by detecting scintillation photons with several MPPC pixels by the light sharing method. -- Highlights: •We constructed and evaluated four-layer DOI detectors by the light sharing method using a MPPC array. •The detectors using two types of the MPPC array were compared. •The energy and timing resolutions of lower than 15% and 1.0 ns were achieved for

  16. Gross beta determination in drinking water using scintillating fiber array detector.

    Science.gov (United States)

    Lv, Wen-Hui; Yi, Hong-Chang; Liu, Tong-Qing; Zeng, Zhi; Li, Jun-Li; Zhang, Hui; Ma, Hao

    2018-04-04

    A scintillating fiber array detector for measuring gross beta counting is developed to monitor the real-time radioactivity in drinking water. The detector, placed in a stainless-steel tank, consists of 1096 scintillating fibers, both sides of which are connected to a photomultiplier tube. The detector parameters, including working voltage, background counting rate and stability, are tested, and the detection efficiency is calibrated using standard potassium chloride solution. Water samples are measured with the detector and the results are compared with those by evaporation method. The results show consistency with those by evaporation method. The background counting rate of the detector is 38.131 ± 0.005 cps, and the detection efficiency for β particles is 0.37 ± 0.01 cps/(Bq/l). The MDAC of this system can be less than 1.0 Bq/l for β particles in 120 min without pre-concentration. Copyright © 2018 Elsevier Ltd. All rights reserved.

  17. Real-time imaging systems for superconducting nanowire single-photon detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Hofherr, Matthias

    2014-07-01

    Superconducting nanowire singe-photon detectors (SNSPD) are promising detectors in the field of applications, where single-photon resolution is required like in quantum optics, spectroscopy or astronomy. These cryogenic detectors gain from a broad spectrum in the optical and infrared range and deliver low dark counts and low jitter. This work provides a piece of deeper physical understanding of detector functionality in combination with highly engineered readout development. A detailed analysis focuses on the intrinsic detection mechanism of SNSPDs related to the detection in the infrared regime and the evolution of dark counts. With this fundamental knowledge, the next step is the development of a multi-pixel readout at cryogenic conditions. It is demonstrated, how two auspicious multi-pixel readout concepts can be realized, which enables statistical framing like in imaging applications using RSFQ electronics with fast framing rates and the readout of a detector array with continuous real-time single-photon resolution.

  18. A high resolution germanium detector array for hypernuclear studies at PANDA

    Energy Technology Data Exchange (ETDEWEB)

    Bleser, Sebastian; Sanchez Lorente, Alicia; Steinen, Marcell [Helmholtz-Institut Mainz (Germany); Gerl, Juergen; Kojouharova, Jasmina; Kojouharov, Ivan [GSI Darmstadt (Germany); Iazzi, Felice [Politecnico, Torino (Italy); INFN, Torino (Italy); Pochodzalla, Josef; Rittgen, Kai; Sahin, Cihan [Institute for Nuclear Physics, JGU Mainz (Germany)

    2014-07-01

    The PANDA experiment, planned at the FAIR facility in Darmstadt, aims at the high resolution γ-spectroscopy of double Λ hypernuclei. For this purpose a devoted detector setup is required, consisting of a primary nuclear target, an active secondary target and a germanium detector array for the γ-spectroscopy. Due to the limited space within the PANDA detector a compact design is required. In particular the conventional LN{sub 2} cooling system must be replaced by an electro mechanical device and a new arrangement of the crystals is needed. This presentation shows the progress in the development of the germanium detectors. First results of in-beam measurements at COSY with a new electro mechanically cooled single crystal prototype are presented. Digital pulse shape analysis is used to disentangle pile up events due to the high event rate. This analysis technique also allows to recover the high original energy resolution in case of neutron damage. Finally the status of the new triple crystal detector prototype is given.

  19. Optimization of a large-area detector-block based on SiPM and pixelated LYSO crystal arrays.

    Science.gov (United States)

    Calva-Coraza, E; Alva-Sánchez, H; Murrieta-Rodríguez, T; Martínez-Dávalos, A; Rodríguez-Villafuerte, M

    2017-10-01

    We present the performance evaluation of a large-area detector module based on the ArrayC-60035-64P, an 8×8 array of tileable, 7.2mm pitch, silicon photomultipliers (SiPM) by SensL, covering a total area of 57.4mm×57.4mm. We characterized the ArrayC-60035-64P, operating at room temperature, using LYSO pixelated crystal arrays of different pitch sizes (1.075, 1.430, 1.683, 2.080 and 2.280mm) to determine the resolvable crystal size. After an optimization process, a 7mm thick coupling light guide was used for all crystal pitches. To identify the interaction position a 16-channel (8 columns, 8 rows) symmetric charge division (SCD) readout board together with a center-of-gravity algorithm was used. Based on this, we assembled the detector modules using a 40×40 LYSO, 1.43mm pitch array, covering the total detector area. Calibration was performed using a 137 Cs source resulting in excellent crystal maps with minor geometric distortion, a mean 4.1 peak-to-valley ratio and 9.6% mean energy resolution for 662keV photons in the central region. The resolvability index was calculated in the x and y directions with values under 0.42 in all cases. We show that these large area SiPM arrays, combined with a 16-channel SCD readout board, can offer high spatial resolution, without processing a big number of signals, attaining excellent energy resolution and detector uniformity. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  20. CMOS pixel development for the ATLAS experiment at HL-LHC

    CERN Document Server

    Risti{c}, Branislav; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

  1. Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

    CERN Document Server

    Turchetta, R; Manolopoulos, S; Tyndel, M; Allport, P P; Bates, R; O'Shea, V; Hall, G; Raymond, M

    2003-01-01

    Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to ta...

  2. CMOS Pixel Development for the ATLAS Experiment at HL-LHC

    CERN Document Server

    Gaudiello, Andrea; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

  3. Performance evaluation of a fully depleted monolithic pixel detector chip in 150 nm CMOS technology

    International Nuclear Information System (INIS)

    Obermann, Theresa

    2017-06-01

    The depleted monolithic active pixel sensor (DMAPS) is a new concept integrating full CMOS circuitry onto a (fully) depletable silicon substrate wafer. The realization of prototypes of the DMAPS concept relies on the availability of multiple well CMOS processes and highly resistive substrates. The CMOS foundry ESPROS Photonics offers both and was chosen for prototyping. Two prototypes, EPCB01 and EPCB02, developed in a 150 nm process on a highly resistive n-type wafer of 50 μm thickness, were characterized. The prototypes have 352 square pixels of 40 μm pitch and a small n-well charge collection node with very low capacitance of 5 fF (n + -implantation size: 5 μm x 5 μm) and about 150 transistors per pixel (CSA and discriminator plus a small digital part). The characterization of the prototypes demonstrates the proof of principle of the concept. Prior to irradiation the prototypes show a signal from a minimum ionizing particle ranging from 2400 e - to 3000 e - while the noise is 30 e - due to the low capacitance. After the irradiation of the prototypes with neutrons up to a fluence of 5 x 10 14 neutrons/cm 2 the performance suffers from the radiation damage leading to a signal of 1000 e - and a higher noise of 60 e - due to the increase of the leakage current. The detection efficiency of the prototypes reduces from 94 % to 26 % after the fluence of 5 x 10 14 particles/cm 2 . Due to the small fill factor the detection efficiency shows are strong dependence on the position within the pixel after irradiation. Thus the DMAPS concept with low fill factor can be used for precise vertex reconstruction in High Energy Physics experiments without severe performance loss up to moderate fluences (< 1 x 10 14 particles/cm 2 ). The expected particle fluences inside of the volume of the upgrade of the ATLAS pixel detector exceed this limit. However, possible applications could be at future linear collider (ILC or CLIC) experiments and B-factories where the low material budget

  4. A high resolution germanium detector array for hypernuclear studies at PANDA

    Energy Technology Data Exchange (ETDEWEB)

    Bleser, Sebastian; Sanchez Lorente, Alicia; Steinen, Marcell [Helmholtz-Institut Mainz (Germany); Gerl, Juergen; Kojouharov, Ivan [GSI, Darmstadt (Germany); Iazzi, Felice [Politecnico, Torino, Turin (Italy); INFN, Torino, Turin (Italy); Pochodzalla, Josef; Rittgen, Kai; Sahin, Cihan [Institute for Nuclear Physics, JGU Mainz (Germany); Collaboration: PANDA-Collaboration

    2013-07-01

    The PANDA experiment, planned at the FAIR facility in Darmstadt, aims at the high resolution γ-spectroscopy of double Λ hypernuclei. For this purpose a devoted detector setup is required, consisting of a primary nuclear target, an active secondary target and a germanium detector array for the γ-spectroscopy. Due to the limited space within the PANDA detector a compact design is required. In particular the conventional LN{sub 2} cooling system must be replaced by an electro-mechanical device and a new arrangement of the crystals is needed. This poster shows the ongoing development of the germanium detectors. Test measurements of a single crystal prototype with an improved cooling concept are shown. Thermal simulations for a triple crystal detector are presented. Aditionally studies of the optimization of the detector arrangement inside the PANDA barrel spectrometer are shown. Finally the status on digital pulse shape analysis is presented which will be necessary to deal with high counting rates and to recover the high original energy resolution in case of neutron damage.

  5. Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

    CERN Document Server

    Despeisse, M; Commichau, S C; Dissertori, G; Garrigos, A; Jarron, P; Miazza, C; Moraes, D; Shah, A; Wyrsch, N; Viertel, Gert M; 10.1016/j.nima.2003.11.022

    2004-01-01

    We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.

  6. X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector

    CERN Document Server

    Schwarz, C; Göppert, R; Heijne, Erik H M; Ludwig, J; Meddeler, G; Mikulec, B; Pernigotti, E; Rogalla, M; Runge, K; Smith, K M; Snoeys, W; Söldner-Rembold, S; Watt, J

    1999-01-01

    The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (...

  7. Frequency-multiplexed bias and readout of a 16-pixel superconducting nanowire single-photon detector array

    Science.gov (United States)

    Doerner, S.; Kuzmin, A.; Wuensch, S.; Charaev, I.; Boes, F.; Zwick, T.; Siegel, M.

    2017-07-01

    We demonstrate a 16-pixel array of microwave-current driven superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, which reduces the required number of bias and readout lines to a single microwave feed line. The electrical behavior of the photon-sensitive nanowires, embedded in a resonant circuit, as well as the optical performance and timing jitter of the single detectors is discussed. Besides the single pixel measurements, we also demonstrate the operation of a 16-pixel array with a temporal, spatial, and photon-number resolution.

  8. Development and Production of Array Barrier Detectors at SCD

    Science.gov (United States)

    Klipstein, P. C.; Avnon, E.; Benny, Y.; Berkowicz, E.; Cohen, Y.; Dobromislin, R.; Fraenkel, R.; Gershon, G.; Glozman, A.; Hojman, E.; Ilan, E.; Karni, Y.; Klin, O.; Kodriano, Y.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nevo, I.; Nitzani, M.; Pivnik, I.; Rappaport, N.; Rosenberg, O.; Shtrichman, I.; Shkedy, L.; Snapi, N.; Talmor, R.; Tessler, R.; Weiss, E.; Tuito, A.

    2017-09-01

    XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced "HOT Pelican D", a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ˜150 K. Its low power (˜3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, "HOT Hercules" was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ("HOT Blackbird") is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch "Pelican-D LW" XB p type II superlattice (T2SL) detector has a ˜9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ˜50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7.

  9. Digital readouts for large microwave low-temperature detector arrays

    International Nuclear Information System (INIS)

    Mazin, Benjamin A.; Day, Peter K.; Irwin, Kent D.; Reintsema, Carl D.; Zmuidzinas, Jonas

    2006-01-01

    Over the last several years many different types of low-temperature detectors (LTDs) have been developed that use a microwave resonant circuit as part of their readout. These devices include microwave kinetic inductance detectors (MKID), microwave SQUID readouts for transition edge sensors (TES), and NIS bolometers. Current readout techniques for these devices use analog frequency synthesizers and IQ mixers. While these components are available as microwave integrated circuits, one set is required for each resonator. We are exploring a new readout technique for this class of detectors based on a commercial-off-the-shelf technology called software defined radio (SDR). In this method a fast digital to analog (D/A) converter creates as many tones as desired in the available bandwidth. Our prototype system employs a 100MS/s 16-bit D/A to generate an arbitrary number of tones in 50MHz of bandwidth. This signal is then mixed up to the desired detector resonant frequency (∼10GHz), sent through the detector, then mixed back down to baseband. The baseband signal is then digitized with a series of fast analog to digital converters (80MS/s, 14-bit). Next, a numerical mixer in a dedicated integrated circuit or FPGA mixes the resonant frequency of a specified detector to 0Hz, and sends the complex detector output over a computer bus for processing and storage. In this paper we will report on our results in using a prototype system to readout a MKID array, including system noise performance, X-ray pulse response, and cross-talk measurements. We will also discuss how this technique can be scaled to read out many thousands of detectors

  10. Application of neural networks to digital pulse shape analysis for an array of silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Flores, J.L. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain); Martel, I. [Dpto de Física Aplicada, Universidad de Huelva (Spain); CERN, ISOLDE, CH 1211 Geneva, 23 (Switzerland); Jiménez, R. [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Galán, J., E-mail: jgalan@diesia.uhu.es [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Salmerón, P. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain)

    2016-09-11

    The new generation of nuclear physics detectors that used to study nuclear reactions is considering the use of digital pulse shape analysis techniques (DPSA) to obtain the (A,Z) values of the reaction products impinging in solid state detectors. This technique can be an important tool for selecting the relevant reaction channels at the HYDE (HYbrid DEtector ball array) silicon array foreseen for the Low Energy Branch of the FAIR facility (Darmstadt, Germany). In this work we study the feasibility of using artificial neural networks (ANNs) for particle identification with silicon detectors. Multilayer Perceptron networks were trained and tested with recent experimental data, showing excellent identification capabilities with signals of several isotopes ranging from {sup 12}C up to {sup 84}Kr, yielding higher discrimination rates than any other previously reported.

  11. A scalable neural chip with synaptic electronics using CMOS integrated memristors

    International Nuclear Information System (INIS)

    Cruz-Albrecht, Jose M; Derosier, Timothy; Srinivasa, Narayan

    2013-01-01

    The design and simulation of a scalable neural chip with synaptic electronics using nanoscale memristors fully integrated with complementary metal–oxide–semiconductor (CMOS) is presented. The circuit consists of integrate-and-fire neurons and synapses with spike-timing dependent plasticity (STDP). The synaptic conductance values can be stored in memristors with eight levels, and the topology of connections between neurons is reconfigurable. The circuit has been designed using a 90 nm CMOS process with via connections to on-chip post-processed memristor arrays. The design has about 16 million CMOS transistors and 73 728 integrated memristors. We provide circuit level simulations of the entire chip performing neuronal and synaptic computations that result in biologically realistic functional behavior. (paper)

  12. High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

    Science.gov (United States)

    Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

    2012-05-07

    This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

  13. Array capabilities and future arrays

    International Nuclear Information System (INIS)

    Radford, D.

    1993-01-01

    Early results from the new third-generation instruments GAMMASPHERE and EUROGAM are confirming the expectation that such arrays will have a revolutionary effect on the field of high-spin nuclear structure. When completed, GAMMASHPERE will have a resolving power am order of magnitude greater that of the best second-generation arrays. When combined with other instruments such as particle-detector arrays and fragment mass analysers, the capabilites of the arrays for the study of more exotic nuclei will be further enhanced. In order to better understand the limitations of these instruments, and to design improved future detector systems, it is important to have some intelligible and reliable calculation for the relative resolving power of different instrument designs. The derivation of such a figure of merit will be briefly presented, and the relative sensitivities of arrays currently proposed or under construction presented. The design of TRIGAM, a new third-generation array proposed for Chalk River, will also be discussed. It is instructive to consider how far arrays of Compton-suppressed Ge detectors could be taken. For example, it will be shown that an idealised open-quote perfectclose quotes third-generation array of 1000 detectors has a sensitivity an order of magnitude higher again than that of GAMMASPHERE. Less conventional options for new arrays will also be explored

  14. Advances in detector technologies for visible and infrared wavefront sensing

    Science.gov (United States)

    Feautrier, Philippe; Gach, Jean-Luc; Downing, Mark; Jorden, Paul; Kolb, Johann; Rothman, Johan; Fusco, Thierry; Balard, Philippe; Stadler, Eric; Guillaume, Christian; Boutolleau, David; Destefanis, Gérard; Lhermet, Nicolas; Pacaud, Olivier; Vuillermet, Michel; Kerlain, Alexandre; Hubin, Norbert; Reyes, Javier; Kasper, Markus; Ivert, Olaf; Suske, Wolfgang; Walker, Andrew; Skegg, Michael; Derelle, Sophie; Deschamps, Joel; Robert, Clélia; Vedrenne, Nicolas; Chazalet, Frédéric; Tanchon, Julien; Trollier, Thierry; Ravex, Alain; Zins, Gérard; Kern, Pierre; Moulin, Thibaut; Preis, Olivier

    2012-07-01

    detector with a readout noise of 3 e (goal 1e) at 700 Hz frame rate. The LGSD is a scaling of the NGSD with 1760x1680 pixels and 3 e readout noise (goal 1e) at 700 Hz (goal 1000 Hz) frame rate. New technologies will be developed for that purpose: advanced CMOS pixel architecture, CMOS back thinned and back illuminated device for very high QE, full digital outputs with signal digital conversion on chip. In addition, the CMOS technology is extremely robust in a telescope environment. Both detectors will be used on the European ELT but also interest potentially all giant telescopes under development. Additional developments also started for wavefront sensing in the infrared based on a new technological breakthrough using ultra low noise Avalanche Photodiode (APD) arrays within the RAPID project. Developed by the SOFRADIR and CEA/LETI manufacturers, the latter will offer a 320x240 8 outputs 30 microns IR array, sensitive from 0.4 to 3.2 microns, with 2 e readout noise at 1500 Hz frame rate. The high QE response is almost flat over this wavelength range. Advanced packaging with miniature cryostat using liquid nitrogen free pulse tube cryocoolers is currently developed for this programme in order to allow use on this detector in any type of environment. First results of this project are detailed here. These programs are held with several partners, among them are the French astronomical laboratories (LAM, OHP, IPAG), the detector manufacturers (e2v technologies, Sofradir, CEA/LETI) and other partners (ESO, ONERA, IAC, GTC). Funding is: Opticon FP6 and FP7 from European Commission, ESO, CNRS and Université de Provence, Sofradir, ONERA, CEA/LETI and the French FUI (DGCIS).

  15. CARIOCA : A Fast Binary Front-End Implemented in 0.25Pm CMOS using a Novel Current-Mode Technique for the LHCb Muon Detector

    CERN Multimedia

    2000-01-01

    The CARIOCA front-end is an amplifier discriminator chip, using 0.25mm CMOS technology, developed with a very fast and low noise preamplifier. This prototype was designed to have input impedance below 10W. Measurements showed a peaking time of 14ns and noise of 450e- at zero input capacitance, with a noise slope of 37.4 e-/pF. The sensitivity of 8mV/fC remains almost unchanged up to a detector capacitance of 120pF.

  16. Power pulsing of the CMOS sensor Mimosa 26

    International Nuclear Information System (INIS)

    Kuprash, Oleg

    2013-01-01

    Mimosa 26 is a monolithic active pixel sensor developed by IPHC (Strasbourg) and IRFU (Saclay) as a prototype for the ILC vertex detector studies. The resolution requirements for the ILC tracking detector are very extreme, demanding very low material in the detector, thus only air cooling can be considered. Power consumption has to be reduced as far as possible. The beam structure of the ILC allows the possibility of power pulsing: only for about the 1 ms long bunch train full power is required, and during the 199 ms long pauses between the bunch trains the power can be reduced to a minimum. Not being adapted for the power pulsing, the sensor shows in laboratory tests a good performance under power pulsing. The power pulsing allows to significantly reduce the heating of the chip and divides power consumption approximately by a factor of 6. In this report a summary of power pulsing studies using the digital readout of Mimosa 26 is given. -- Highlights: • First power pulsing studies using digital readout of Mimosa 26 CMOS sensor were done. • Fake hit rates under power pulsing conditions and under normal conditions were compared. • The measurements demonstrate that there is so far no showstopper to operate CMOS pixel sensors in power pulsing mode

  17. A photovoltaic-driven and energy-autonomous CMOS implantable sensor.

    Science.gov (United States)

    Ayazian, Sahar; Akhavan, Vahid A; Soenen, Eric; Hassibi, Arjang

    2012-08-01

    An energy-autonomous, photovoltaic (PV)-driven and MRI-compatible CMOS implantable sensor is presented. On-chip P+/N-well diode arrays are used as CMOS-compatible PV cells to harvest μW's of power from the light that penetrates into the tissue. In this 2.5 mm × 2.5 mm sub-μW integrated system, the in-vivo physiological signals are first measured by using a subthreshold ring oscillator-based sensor, the acquired data is then modulated into a frequency-shift keying (FSK) signal, and finally transmitted neuromorphically to the skin surface by using a pair of polarized electrodes.

  18. Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

    Science.gov (United States)

    Giese, Malte; Vehring, Sönke; Böck, Georg; Jacob, Arne F.

    2017-09-01

    This paper presents requirements and front-end solutions for low-cost communication systems with data rates of 100 Gbit/s. Link budget analyses in different mass-market applications are conducted for that purpose. It proposes an implementation of the front-end as an active antenna array with support for beam steering and polarization multiplexing over the full W-band. The critical system components are investigated and presented. This applies to a transformer coupled power amplifier (PA) in 40 nm bulk CMOS. It shows saturated output power of more than 10 dBm and power-added-efficiency of more than 10 % over the full W-band. Furthermore, the performance of microstrip-to-waveguide transitions is shown exemplarily as an important part of the active antenna as it interfaces active circuitry and antenna in a polymer-and-metal process. The transition test design shows less than 0.9 dB insertion loss and more than 12 dB return loss for the differential transition over the full W-band.

  19. The acceptance of surface detector arrays for high energy cosmological muon neutrinos

    International Nuclear Information System (INIS)

    Vo Van Thuan; Hoang Van Khanh

    2011-01-01

    In order to search for ultra-high energy cosmological earth-skimming muon neutrinos by the surface detector array (SD) similar to one of the Pierre Auger Observatory (PAO), we propose to use the transition electromagnetic radiation at the medium interface induced by earth-skimming muons for triggering a few of aligned neighboring Cherenkov SD stations. Simulations of the acceptance of a modeling SD array have been done to estimate the detection probability of earth-skimming muon neutrinos.

  20. Design and operation of a 2-D thin-film semiconductor neutron detector array for use as a beamport monitor

    International Nuclear Information System (INIS)

    Unruh, Troy C.; Bellinger, Steven L.; Huddleston, David E.; McNeil, Walter J.; Patterson, Eric; Sobering, Tim J.; McGregor, Douglas S.

    2009-01-01

    Silicon-based diodes coated with a thin film of neutron reactive materials have been shown to produce excellent low-efficiency neutron detectors. This work employs the same technology, but groups 25 equally sized and spaced diodes on a single 29 mm by 29 mm substrate. A 5x5 array was fabricated and coated with a thin film of 6 LiF for use as a low-efficiency neutron beam monitor. The 5x5 neutron detector array is coupled to an array of amplifiers, allowing the response to be interpreted using a LabVIEW FPGA. The 5x5 array has been characterized in a diffracted neutron beam. This work is a part of on-going research to develop various designs of high- and low-efficiency semiconductor neutron detectors.

  1. Low noise monolithic CMOS front end electronics

    International Nuclear Information System (INIS)

    Lutz, G.; Bergmann, H.; Holl, P.; Manfredi, P.F.

    1987-01-01

    Design considerations for low noise charge measurement and their application in CMOS electronics are described. The amplifier driver combination whose noise performance has been measured in detail as well as the analog multiplexing silicon strip detector readout electronics are designed with low power consumption and can be operated in pulsed mode so as to reduce heat dissipation even further in many applications. (orig.)

  2. Arrays of Segmented, Tapered Light Guides for Use With Large, Planar Scintillation Detectors

    Science.gov (United States)

    Raylman, Raymond R.; Vaigneur, Keith; Stolin, Alexander V.; Jaliparthi, Gangadhar

    2015-06-01

    Metabolic imaging techniques can potentially improve detection and diagnosis of cancer in women with radiodense and/or fibrocystic breasts. Our group has previously developed a high-resolution positron emission tomography imaging and biopsy device (PEM-PET) to detect and guide the biopsy of suspicious breast lesions. Initial testing revealed that the imaging field-of-view (FOV) of the scanner was smaller than the physical size of the detector's active area, which could hinder sampling of breast areas close to the chest wall. The purpose of this work was to utilize segmented, tapered light guides for optically coupling the scintillator arrays to arrays of position-sensitive photomultipliers to increase both the active FOV and identification of individual scintillator elements. Testing of the new system revealed that the optics of these structures made it possible to discern detector elements from the complete active area of the detector face. In the previous system the top and bottom rows and left and right columns were not identifiable. Additionally, use of the new light guides increased the contrast of individual detector elements by up to 129%. Improved element identification led to a spatial resolution increase by approximately 12%. Due to attenuation of light in the light guides the detector energy resolution decreased from 18.5% to 19.1%. Overall, these improvements should increase the field-of-view and spatial resolution of the dedicated breast-PET system.

  3. High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

    Science.gov (United States)

    Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

    2010-12-15

    A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging. Copyright © 2010 Elsevier B.V. All rights reserved.

  4. Chemical imaging of cotton fibers using an infrared microscope and a focal-plane array detector

    Science.gov (United States)

    In this presentation, the chemical imaging of cotton fibers with an infrared microscope and a Focal-Plane Array (FPA) detector will be discussed. Infrared spectroscopy can provide us with information on the structure and quality of cotton fibers. In addition, FPA detectors allow for simultaneous spe...

  5. Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989

    Science.gov (United States)

    Dereniak, Eustace L.; Sampson, Robert T.

    1989-10-01

    The present conference on advancements in IR detectors, Schottky-barrier focal plane arrays, CCD image analysis, and HgCdTe materials gives attention to a 256 x 256 PtSi array for IR astronomy, proposals for a second-generation meteosat's advanced optical payload, cryogenic bipolar technology for on-focal-plane signal processing, a parallel cellular processing system for fast generation of perspective plots, and ultrahigh-speed CCD image sensors for scanning applications. Also discussed are MBE GaAs rib waveguide experiments at 10.6 microns, an interferometric thermal detector, the development status of superconducting IR detector research, the absorption coefficients of n-type Hg(1-x)Cd(x)Te samples, and the influence of the surface channel on crosstalk in HgCdTe photovoltaic arrays.

  6. Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

    International Nuclear Information System (INIS)

    Despeisse, M.; Anelli, G.; Commichau, S.; Dissertori, G.; Garrigos, A.; Jarron, P.; Miazza, C.; Moraes, D.; Shah, A.; Wyrsch, N.; Viertel, G.

    2004-01-01

    We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25 μm CMOS technology. Experimental results presented have been obtained with a 600 nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed

  7. A 32-channels, 025 mu m CMOS ASIC for the readout of the Silicon Drift Detectors of the ALICE experiment

    CERN Document Server

    Mazza, G; Anelli, G; Anghinolfi, F; Martínez, M I; Rotondo, F

    2004-01-01

    In this paper we present a 32 channel ASIC prototype for the readout of the Silicon Drift Detectors (SDDs) of the ALICE experiment. The ASIC integrates on the same chip 32 transimpedance amplifiers, a 32*256 cells analogue memory and 16 successive approximation 10 bit A /D converters. The circuit amplifies and samples at 40 MS/s the input signal in a continuous way; when an external trigger signal validates the acquisition, the sampling is stopped and the data are digitized at lower speed (0.5 MS/s). The chip has been designed and fabricated in a commercial. 0.25 mu m CMOS technology. It has been extensively tested both on a bench and connected with the detector in several beam tests. In this paper both design issues and test results are presented. The commercial technology used for the design has been yield radiation tolerant with special layout techniques. Total dose irradiation tests are also presented. (13 refs).

  8. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    International Nuclear Information System (INIS)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

  9. Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

    Science.gov (United States)

    Cha, B. K.; kim, J. Y.; Kim, T. J.; Sim, C.; Cho, G.; Lee, D. H.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2011-01-01

    In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd2O2S:Tb and 6LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd2O2S:Tb and 6LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm2 active area and 48μm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x106n/cm2/s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.

  10. CMOS circuits manual

    CERN Document Server

    Marston, R M

    1995-01-01

    CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

  11. Direct reading of charge multipliers with a self-triggering CMOS analog chip with 105k pixels at 50 micron pitch

    CERN Document Server

    Bellazzini, R; Minuti, M; Baldini, L; Brez, A; Cavalca, F; Latronico, L; Omodei, N; Massai, M M; Sgro, C; Costa, E; Krummenacher, P S F; De Oliveira, R

    2006-01-01

    We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50 micron pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in the remaining five metal and two poly-silicon layers of a 0.18 micron VLSI technology. The chip has customizable self-triggering capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way it is possible to reduce significantly the readout time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. The ve...

  12. Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process

    Science.gov (United States)

    Zhang, Ying; Zhu, Hongbo; Zhang, Liang; Fu, Min

    2016-09-01

    The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex detector, which will play a critical role in heavy-flavor tagging, must be constructed with fine-pitched silicon pixel sensors with low power consumption and fast readout. CMOS pixel sensor (CPS), as one of the most promising candidate technologies, has already demonstrated its excellent performance in several high energy physics experiments. Therefore it has been considered for R&D for the CEPC vertex detector. In this paper, we present the preliminary studies to improve the collected signal charge over the equivalent input capacitance ratio (Q / C), which will be crucial to reduce the analog power consumption. We have performed detailed 3D device simulation and evaluated potential impacts from diode geometry, epitaxial layer properties and non-ionizing radiation damage. We have proposed a new approach to improve the treatment of the boundary conditions in simulation. Along with the TCAD simulation, we have designed the exploratory prototype utilizing the TowerJazz 0.18 μm CMOS imaging sensor process and we will verify the simulation results with future measurements.

  13. Optimization Design Method for the CMOS-type Capacitive Micro-Machined Ultrasonic Transducer

    Directory of Open Access Journals (Sweden)

    D. Y. Chiou

    2011-12-01

    Full Text Available In this study, an integrated modeling technique for characterization and optimization design of the complementary metal-oxide-semiconductor (CMOS capacitive micro-arrayed ultrasonic transducer (pCMOS-CMUT is presented. Electromechanical finite element simulations are performed to investigate its operational characteristics, such as the collapse voltage and the resonant frequency. Both the numerical and experimental results are in good agreement. In order to simultaneously customize the resonant frequency and minimize the collapse voltage, the genetic algorithm (GA is applied to optimize dimensional parameters of the transducer. From the present results, it is concluded that the FE/GA coupling approach provides another efficient numerical tool for multi-objective design of the pCMOS-CMUT.

  14. An ancient form of position-sensitive detector - the individual counter array

    International Nuclear Information System (INIS)

    Hewat, A.W.

    1983-01-01

    Large position sensitive detectors (PSDs) have been very successful as high efficiency neutron powder diffractometers. Complete powder patterns can be obtained within minutes, making possible real-time measurements of structural changes accompanying chemical and electrochemical reactions. The angular resolution of such machines is determined by the diameter of the sample, and not simply by the resolution of the detector itself. It is argued that since sample diameters are usually 5mm to 10mm, it is possible to use an array of individual counters of similar diameter rather than a true PSD. Such a low to medium resolution individual counter array (ICA) can be made more efficient than the true PSD, produces an identical diffraction pattern, and has several practical advantages, including covering a greater solid angle. For high resolution powder diffraction, it has already been demonstrated that an ICA, in this case associated with Soller collimators, is again the most efficient solution. This is because the sample volume (and intensity) of a high resolution PSD decreases quadratically with the diameter of the sample. The only alternative to very small samples would be a large sample-detector distance, and then large vertical divergences cannot be achieved because of mechanical limitations on gas-filled PSD apertures; again intensity is lost. The resolution and efficiency of the ICA are discussed. (author)

  15. Determination of the detective quantum efficiency (DQE) of CMOS/CsI imaging detectors following the novel IEC 62220-1-1:2015 International Standard

    International Nuclear Information System (INIS)

    Michail, C.; Valais, I.; Martini, N.; Koukou, V.; Kalyvas, N.; Bakas, A.; Kandarakis, I.; Fountos, G.

    2016-01-01

    The purpose of the present study was to determine the Detective Quantum Efficiency (DQE) of CMOS imaging detectors, coupled to structured CsI:Tl and Gd_2O_2S:Tb scintillating screens, following the new IEC 62220-1-1:2015 International Standard. DQE was assessed after the experimental determination of the Modulation Transfer Function (MTF) and the Normalized Noise Power Spectrum (NNPS) in the general radiography energy range. Two CMOS sensors were used; one with a pixel size of 22.5 μmcoupled to a columnar CsI:Tl scintillator screen with thickness of 490 μm, which was placed in direct contact with the optical sensor and one with a pixel size of 74.8 μmcoupled to a 200 μmcolumnar CsI:Tl scintillator screen. The MTF was measured using the slanted-edge method (following both the IEC 62220-1:2003 and IEC 62220-1-1:2015 methods) while NNPS was determined by 2D Fourier transforming uniformly exposed images. Both parameters were assessed by irradiation under the RQA-3 and RQA-5 (IEC 62220-1-1:2015) beam qualities. The detector response functions were linear for the exposure ranges under investigation. MTFs calculated following the 62220-1:2003 protocol, were found in all cases overestimated in the higher frequency range (spatial frequencies higher than 2 cycles/mm). DQE values, determined with the IEC 62220-1:2003 method, were also found overestimated (spatial frequencies higher than 2 cycles/mm), due to the influence of both MTF and NNPS. The influence of both additive and multiplicative lag effects were found below 0.005, insuring that lag contributes less than 0.5% of the effective exposure. - Highlights: • DQE was measured with the novel 62220-1-1:2015 protocol and compared to 62220-1:2003. • Two CMOS sensors were evaluated. • DQE of the 62220-1:2003 was overestimated due to the addition of noise when averaging MTFs.

  16. Spatial resolution of 2D ionization chamber arrays for IMRT dose verification: single-detector size and sampling step width

    International Nuclear Information System (INIS)

    Poppe, Bjoern; Djouguela, Armand; Blechschmidt, Arne; Willborn, Kay; Ruehmann, Antje; Harder, Dietrich

    2007-01-01

    The spatial resolution of 2D detector arrays equipped with ionization chambers or diodes, used for the dose verification of IMRT treatment plans, is limited by the size of the single detector and the centre-to-centre distance between the detectors. Optimization criteria with regard to these parameters have been developed by combining concepts of dosimetry and pattern analysis. The 2D-ARRAY Type 10024 (PTW-Freiburg, Germany), single-chamber cross section 5 x 5 mm 2 , centre-to-centre distance between chambers in each row and column 10 mm, served as an example. Additional frames of given dose distributions can be taken by shifting the whole array parallel or perpendicular to the MLC leaves by, e.g., 5 mm. The size of the single detector is characterized by its lateral response function, a trapezoid with 5 mm top width and 9 mm base width. Therefore, values measured with the 2D array are regarded as sample values from the convolution product of the accelerator generated dose distribution and this lateral response function. Consequently, the dose verification, e.g., by means of the gamma index, is performed by comparing the measured values of the 2D array with the values of the convolution product of the treatment planning system (TPS) calculated dose distribution and the single-detector lateral response function. Sufficiently small misalignments of the measured dose distributions in comparison with the calculated ones can be detected since the lateral response function is symmetric with respect to the centre of the chamber, and the change of dose gradients due to the convolution is sufficiently small. The sampling step width of the 2D array should provide a set of sample values representative of the sampled distribution, which is achieved if the highest spatial frequency contained in this function does not exceed the 'Nyquist frequency', one half of the sampling frequency. Since the convolution products of IMRT-typical dose distributions and the single-detector

  17. GOSSIP: A vertex detector combining a thin gas layer as signal generator with a CMOS readout pixel array

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, M. [CERN/MediPix Consortium, Geneva (Switzerland); Heijne, E.H.M. [CERN/MediPix Consortium, Geneva (Switzerland); Llopart, X. [CERN/MediPix Consortium, Geneva (Switzerland); Colas, P. [DAPNIA, CEA Saclay, 91191 Gif sur Yvette Cedex (France); Giganon, A. [DAPNIA, CEA Saclay, 91191 Gif sur Yvette Cedex (France); Giomataris, Y. [DAPNIA, CEA Saclay, 91191 Gif sur Yvette Cedex (France); Chefdeville, M. [NIKHEF, Amsterdam (Netherlands); Colijn, A.P. [NIKHEF, Amsterdam (Netherlands); Fornaini, A. [NIKHEF, Amsterdam (Netherlands); Graaf, H. van der [NIKHEF, Amsterdam (Netherlands)]. E-mail: vdgraaf@nikhef.nl; Kluit, P. [NIKHEF, Amsterdam (Netherlands); Timmermans, J. [NIKHEF, Amsterdam (Netherlands); Visschers, J.L. [NIKHEF, Amsterdam (Netherlands); Schmitz, J. [University of Twente/MESA (Netherlands)

    2006-05-01

    A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed 50{mu}m above the chip, and electron multiplication occurred in the gap. With a He/isobutane 80/20 mixture, gas multiplication factors up to tens of thousands were achieved, resulting in an efficiency for detecting single electrons of better than 90%. With this new readout technology for gas-filled detectors we recorded many image frames containing 2D images with tracks from cosmic muons. Along these tracks, electron clusters were observed, as well as {delta}-rays. With a gas layer thickness of only 1mm, the device could be applied as vertex detector, outperforming all Si-based detectors.

  18. GOSSIP: A vertex detector combining a thin gas layer as signal generator with a CMOS readout pixel array

    International Nuclear Information System (INIS)

    Campbell, M.; Heijne, E.H.M.; Llopart, X.; Colas, P.; Giganon, A.; Giomataris, Y.; Chefdeville, M.; Colijn, A.P.; Fornaini, A.; Graaf, H. van der; Kluit, P.; Timmermans, J.; Visschers, J.L.; Schmitz, J.

    2006-01-01

    A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed 50μm above the chip, and electron multiplication occurred in the gap. With a He/isobutane 80/20 mixture, gas multiplication factors up to tens of thousands were achieved, resulting in an efficiency for detecting single electrons of better than 90%. With this new readout technology for gas-filled detectors we recorded many image frames containing 2D images with tracks from cosmic muons. Along these tracks, electron clusters were observed, as well as δ-rays. With a gas layer thickness of only 1mm, the device could be applied as vertex detector, outperforming all Si-based detectors

  19. GOSSIP: A vertex detector combining a thin gas layer as signal generator with a CMOS readout pixel array

    Science.gov (United States)

    Campbell, M.; Heijne, E. H. M.; Llopart, X.; Colas, P.; Giganon, A.; Giomataris, Y.; Chefdeville, M.; Colijn, A. P.; Fornaini, A.; van der Graaf, H.; Kluit, P.; Timmermans, J.; Visschers, J. L.; Schmitz, J.

    2006-05-01

    A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed 50 μm above the chip, and electron multiplication occurred in the gap. With a He/isobutane 80/20 mixture, gas multiplication factors up to tens of thousands were achieved, resulting in an efficiency for detecting single electrons of better than 90%. With this new readout technology for gas-filled detectors we recorded many image frames containing 2D images with tracks from cosmic muons. Along these tracks, electron clusters were observed, as well as δ-rays. With a gas layer thickness of only 1 mm, the device could be applied as vertex detector, outperforming all Si-based detectors.

  20. Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

    International Nuclear Information System (INIS)

    Re, V.; Gaioni, L.; Manghisoni, M.; Ratti, L.; Traversi, G.

    2010-01-01

    The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the design of very compact front-end systems with advanced integrated functionalities. This is especially true in the case of pixel detectors, both for monolithic devices (MAPS) and for hybrid implementations where a high resistivity sensor is connected to a CMOS readout chip. Technologies beyond the 100 nm frontier have peculiar features, such as the evolution of the device gate material to reduce tunneling currents through the thin dielectric. These new physical device parameters may impact on functional properties such as noise and radiation hardness. On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies.

  1. Array element of a space-based synchrotron radiation detector

    International Nuclear Information System (INIS)

    Lee, M.W.; Commichau, S.C.; Kim, G.N.; Son, D.; Viertel, G.M.

    2006-01-01

    A synchrotron radiation detector (SRD) has been proposed as part of the Alpha Magnetic Spectrometer experiment on the International Space Station to study cosmic ray electrons and positrons in the TeV energy range. The SRD will identify these particles by detecting their emission of synchrotron radiation in the Earth's magnetic field. This article reports on the study of key technical parameters for the array elements which form the SRD, including the choice of the detecting medium, the sensor and the readout system

  2. Advanced Antenna-Coupled Superconducting Detector Arrays for CMB Polarimetry

    Science.gov (United States)

    Bock, James

    2014-01-01

    We are developing high-sensitivity millimeter-wave detector arrays for measuring the polarization of the cosmic microwave background (CMB). This development is directed to advance the technology readiness of the Inflation Probe mission in NASA's Physics of the Cosmos program. The Inflation Probe is a fourth-generation CMB satellite that will measure the polarization of the CMB to astrophysical limits, characterizing the inflationary polarization signal, mapping large-scale structure based on polarization induced by gravitational lensing, and mapping Galactic magnetic fields through measurements of polarized dust emission. The inflationary polarization signal is produced by a background of gravitational waves from the epoch of inflation, an exponential expansion of space-time in the early universe, with an amplitude that depends on the physical mechanism producing inflation. The inflationary polarization signal may be distinguished by its unique 'B-mode' vector properties from polarization from the density variations that predominantly source CMB temperature anisotropy. Mission concepts for the Inflation Probe are being developed in the US, Europe and Japan. The arrays are based on planar antennas that provide integral beam collimation, polarization analysis, and spectral band definition in a compact lithographed format that eliminates discrete fore-optics such as lenses and feedhorns. The antennas are coupled to transition-edge superconducting bolometers, read out with multiplexed SQUID current amplifiers. The superconducting sensors and readouts developed in this program share common technologies with NASA X-ray and FIR detector applications. Our program targets developments required for space observations, and we discuss our technical progress over the past two years and plans for future development. We are incorporating arrays into active sub-orbital and ground-based experiments, which advance technology readiness while producing state of the art CMB

  3. A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

    Science.gov (United States)

    Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

    2002-01-01

    Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

  4. MEGHNAD – A multi element detector array for heavy ion collision ...

    Indian Academy of Sciences (India)

    When heavy ion beam available from such machines fall on a target and undergo collision, very rich and often pristine fields of research open up. In order to carry on such activities, we have taken up a project to build a multi element gamma, heavy ion and neutron array of detectors (MEGHNAD) to detect and study the ...

  5. New submillimeter detectors and antenna arrays

    International Nuclear Information System (INIS)

    Fetterman, H.R.; Reible, S.A.; Sollner, G.; Parker, C.D.

    1982-01-01

    Preliminary investigation has been made into the use of SIS (superconductor--insulator--superconductor) diodes for possible roles in sub-millimeter imaging systems. That is, extremely low noise, millimeter wave detectors and mixers have recently been reported which depend on single-particle tunnelling between two superconducting films separated by a thin oxide layer. The combination of excellent low-frequency sensitivity and well-developed fabrication technology make the SIS mixers particularly attractive for the systems using antenna structures and arrays in millimeter and submillimeter regions. The SIS diodes of Nb-Nb 2 O 5 -Pb showed a strong video response to the radiation which could be differentiated from the regular Josephson effect since it was not affected by a magnetic field. In exploring the three-terminal devices for possible detector and source applications in submillimeter region, the authors first determined that millimeter and submillimeter radiation could be effectively coupled to and detected in high-frequency FETs. Video response was readily obtained at 800 GHz, and carcinotron radiation at 350 GHz was mixed with the 5th harmonic of a 70 GHz klystron, producing over 45 db signal-to-noise ratio in the intermediate frequency. Since FET can function as a three-terminal oscillator simultaneously detecting submillimeter radiation or optical beats, it has interesting possibility, such as self-oscillating mixers or subharmonic local oscillators. (Wakatsuki, Y.)

  6. Performance evaluation of a fully depleted monolithic pixel detector chip in 150 nm CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Obermann, Theresa

    2017-06-15

    The depleted monolithic active pixel sensor (DMAPS) is a new concept integrating full CMOS circuitry onto a (fully) depletable silicon substrate wafer. The realization of prototypes of the DMAPS concept relies on the availability of multiple well CMOS processes and highly resistive substrates. The CMOS foundry ESPROS Photonics offers both and was chosen for prototyping. Two prototypes, EPCB01 and EPCB02, developed in a 150 nm process on a highly resistive n-type wafer of 50 μm thickness, were characterized. The prototypes have 352 square pixels of 40 μm pitch and a small n-well charge collection node with very low capacitance of 5 fF (n{sup +}-implantation size: 5 μm x 5 μm) and about 150 transistors per pixel (CSA and discriminator plus a small digital part). The characterization of the prototypes demonstrates the proof of principle of the concept. Prior to irradiation the prototypes show a signal from a minimum ionizing particle ranging from 2400 e{sup -} to 3000 e{sup -} while the noise is 30 e{sup -} due to the low capacitance. After the irradiation of the prototypes with neutrons up to a fluence of 5 x 10{sup 14} neutrons/cm{sup 2} the performance suffers from the radiation damage leading to a signal of 1000 e{sup -} and a higher noise of 60 e{sup -} due to the increase of the leakage current. The detection efficiency of the prototypes reduces from 94 % to 26 % after the fluence of 5 x 10{sup 14} particles/cm{sup 2}. Due to the small fill factor the detection efficiency shows are strong dependence on the position within the pixel after irradiation. Thus the DMAPS concept with low fill factor can be used for precise vertex reconstruction in High Energy Physics experiments without severe performance loss up to moderate fluences (< 1 x 10{sup 14} particles/cm{sup 2}). The expected particle fluences inside of the volume of the upgrade of the ATLAS pixel detector exceed this limit. However, possible applications could be at future linear collider (ILC or CLIC

  7. Characterization of active CMOS pixel sensors on high resistive substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

    2016-07-01

    Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  8. Analyzing CMOS/SOS fabrication for LSI arrays

    Science.gov (United States)

    Ipri, A. C.

    1978-01-01

    Report discusses set of design rules that have been developed as result of work with test arrays. Set of optimum dimensions is given that would maximize process output and would correspondingly minimize costs in fabrication of large-scale integration (LSI) arrays.

  9. A cryogenic thermal source for detector array characterization

    Science.gov (United States)

    Chuss, David T.; Rostem, Karwan; Wollack, Edward J.; Berman, Leah; Colazo, Felipe; DeGeorge, Martin; Helson, Kyle; Sagliocca, Marco

    2017-10-01

    We describe the design, fabrication, and validation of a cryogenically compatible quasioptical thermal source for characterization of detector arrays. The source is constructed using a graphite-loaded epoxy mixture that is molded into a tiled pyramidal structure. The mold is fabricated using a hardened steel template produced via a wire electron discharge machining process. The absorptive mixture is bonded to a copper backplate enabling thermalization of the entire structure and measurement of the source temperature. Measurements indicate that the reflectance of the source is <0.001 across a spectral band extending from 75 to 330 GHz.

  10. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

    Energy Technology Data Exchange (ETDEWEB)

    Pellion, D.; Jradi, K.; Brochard, N. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France); Prêle, D. [APC – CNRS/Univ. Paris Diderot, Paris (France); Ginhac, D. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France)

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm{sup 2}) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s{sup −1} while it is 270 count s{sup −1} at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment

  11. A new DOI detector design using discrete crystal array with depth-dependent reflector patterns and single-ended readout

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Jae; Lee, Chaeyeong [Department of Radiological Science, Yonsei University, Wonju 26493 (Korea, Republic of); Kang, Jihoon, E-mail: ray.jihoon.kang@gmail.com [Department of Biomedical Engineering, Chonnam National University, 50 Daehak-ro, Yeosu, Jeonnam 59626 (Korea, Republic of); Chung, Yong Hyun, E-mail: ychung@yonsei.ac.kr [Department of Radiological Science, Yonsei University, Wonju 26493 (Korea, Republic of)

    2017-01-21

    We developed a depth of interaction (DOI) positron emission tomography (PET) detector using depth-dependent reflector patterns in a discrete crystal array. Due to the different reflector patterns at depth, light distribution was changed relative to depth. As a preliminary experiment, we measured DOI detector module crystal identification performance. The crystal consisted of a 9×9 array of 2 mmx2 mmx20 mm lutetium-yttrium oxyorthosilicate (LYSO) crystals. The crystal array was optically coupled to a 64-channel position-sensitive photomultiplier tube with a 2 mmx2 mm anode size and an 18.1 mmx18.1 mm effective area. We obtained the flood image with an Anger-type calculation. DOI layers and 9×9 pixels were well distinguished in the obtained images. Preclinical PET scanners based on this detector design offer the prospect of high and uniform spatial resolution.

  12. A new DOI detector design using discrete crystal array with depth-dependent reflector patterns and single-ended readout

    International Nuclear Information System (INIS)

    Lee, Seung-Jae; Lee, Chaeyeong; Kang, Jihoon; Chung, Yong Hyun

    2017-01-01

    We developed a depth of interaction (DOI) positron emission tomography (PET) detector using depth-dependent reflector patterns in a discrete crystal array. Due to the different reflector patterns at depth, light distribution was changed relative to depth. As a preliminary experiment, we measured DOI detector module crystal identification performance. The crystal consisted of a 9×9 array of 2 mmx2 mmx20 mm lutetium-yttrium oxyorthosilicate (LYSO) crystals. The crystal array was optically coupled to a 64-channel position-sensitive photomultiplier tube with a 2 mmx2 mm anode size and an 18.1 mmx18.1 mm effective area. We obtained the flood image with an Anger-type calculation. DOI layers and 9×9 pixels were well distinguished in the obtained images. Preclinical PET scanners based on this detector design offer the prospect of high and uniform spatial resolution.

  13. Infrared Imaging of Cotton Fiber Bundles Using a Focal Plane Array Detector and a Single Reflectance Accessory

    Directory of Open Access Journals (Sweden)

    Michael Santiago Cintrón

    2016-11-01

    Full Text Available Infrared imaging is gaining attention as a technique used in the examination of cotton fibers. This type of imaging combines spectral analysis with spatial resolution to create visual images that examine sample composition and distribution. Herein, we report on the use of an infrared instrument equipped with a reflection accessory and an array detector system for the examination of cotton fiber bundles. Cotton vibrational spectra and chemical images were acquired by grouping pixels in the detector array. This technique reduced spectral noise and was employed to visualize cell wall development in cotton fibers bundles. Fourier transform infrared spectra reveal band changes in the C–O bending region that matched previous studies. Imaging studies were quick, relied on small amounts of sample and provided a distribution of the cotton fiber cell wall composition. Thus, imaging of cotton bundles with an infrared detector array has potential for use in cotton fiber examinations.

  14. 10μm pitch family of InSb and XBn detectors for MWIR imaging

    Science.gov (United States)

    Gershon, G.; Avnon, E.; Brumer, M.; Freiman, W.; Karni, Y.; Niderman, T.; Ofer, O.; Rosenstock, T.; Seref, D.; Shiloah, N.; Shkedy, L.; Tessler, R.; Shtrichman, I.

    2017-02-01

    There has been a growing demand over the past few years for infrared detectors with a smaller pixel dimension. On the one hand, this trend of pixel shrinkage enables the overall size of a given Focal Plan Array (FPA) to be reduced, allowing the production of more compact, lower power, and lower cost electro-optical (EO) systems. On the other hand, it enables a higher image resolution for a given FPA area, which is especially suitable in infrared systems with a large format that are used with a wide Field of View (FOV). In response to these market trends SCD has developed the Blackbird family of 10 μm pitch MWIR digital infrared detectors. The Blackbird family is based on three different Read- Out Integrated Circuit (ROIC) formats: 1920×1536, 1280×1024 and 640×512, which exploit advanced and mature 0.18 μm CMOS technology and exhibit high functionality with relatively low power consumption. Two types of 10 μm pixel sensing arrays are supported. The first is an InSb photodiode array based on SCD's mature planar implanted p-n junction technology, which covers the full MWIR band, and is designed to operate at 77K. The second type of sensing array covers the blue part of the MWIR band and uses the patented XBn-InAsSb barrier detector technology that provides electro-optical performance equivalent to planar InSb but at operating temperatures as high as 150 K. The XBn detector is therefore ideal for low Size, Weight and Power (SWaP) applications. Both sensing arrays, InSb and XBn, are Flip-chip bonded to the ROICs and assembled into custom designed Dewars that can withstand harsh environmental conditions while minimizing the detector heat load. A dedicated proximity electronics board provides power supplies and timing to the ROIC and enables communication and video output to the system. Together with a wide range of cryogenic coolers, a high flexibility of housing designs and various modes of operation, the Blackbird family of detectors presents solutions for EO

  15. Pixel array detector for X-ray free electron laser experiments

    Energy Technology Data Exchange (ETDEWEB)

    Philipp, Hugh T., E-mail: htp2@cornell.edu [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Hromalik, Marianne [Electrical and Computer Engineering, SUNY Oswego, Oswego, NY 13126 (United States); Tate, Mark; Koerner, Lucas [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M. [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Wilson Laboratory, Cornell University, CHESS, Ithaca, NY 14853 (United States)

    2011-09-01

    X-ray free electron lasers (XFELs) promise to revolutionize X-ray science with extremely high peak brilliances and femtosecond X-ray pulses. This will require novel detectors to fully realize the potential of these new sources. There are many current detector development projects aimed at the many challenges of meeting the XFEL requirements . This paper describes a pixel array detector (PAD) that has been developed for the Coherent X-ray Imaging experiment at the Linac Coherent Light Source (LCLS) at the SLAC National Laboratory . The detector features 14-bit in-pixel digitization; a 2-level in-pixel gain setting that can be used to make an arbitrary 2-D gain pattern that is adaptable to a particular experiment; the ability to handle instantaneous X-ray flux rates of 10{sup 17} photons per second; and continuous frames rates in excess of 120 Hz. The detector uses direct detection of X-rays in a silicon diode. The charge produced by the diode is integrated in a pixilated application specific integrated circuit (ASIC) which digitizes collected holes with single X-ray photon capability. Each ASIC is 194x185 pixels, each pixel is 110{mu}mx110{mu}m on a side. Each pixel can detect up to 2500 X-rays per frame in low-gain mode, yet easily detects single photons at high-gain. Cooled, single-chip detectors have been built and meet all the required specifications. SLAC National Laboratory is engaged in constructing a tiled, multi-chip 1516x1516 pixel detector.

  16. Development of CMOS pixel sensors for tracking and vertexing in high energy physics experiments

    CERN Document Server

    Senyukov, Serhiy; Besson, Auguste; Claus, Giles; Cousin, Loic; Dulinski, Wojciech; Goffe, Mathieu; Hippolyte, Boris; Maria, Robert; Molnar, Levente; Sanchez Castro, Xitzel; Winter, Marc

    2014-01-01

    CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a small pixel pitch ($\\sim 20 \\mu m$) and low material budget ($\\sim 0.2-0.3\\% X_0$) per layer. These characteristics make CPS an attractive option for vertexing and tracking systems of high energy physics experiments. Moreover, thanks to the mass production industrial CMOS processes used for the manufacturing of CPS the fabrication construction cost can be significantly reduced in comparison to more standard semiconductor technologies. However, the attainable performance level of the CPS in terms of radiation hardness and readout speed is mostly determined by the fabrication parameters of the CMOS processes available on the market rather than by the CPS intrinsic potential. The permanent evolution of commercial CMOS processes towards smaller feature sizes and high resistivity ...

  17. Design of readout drivers for ATLAS pixel detectors using field programmable gate arrays

    CERN Document Server

    Sivasubramaniyan, Sriram

    Microstrip detectors are an integral patt of high energy physics research . Special protocols are used to transmit the data from these detectors . To readout the data from such detectors specialized instrumentation have to be designed . To achieve this task, creative and innovative high speed algorithms were designed simulated and implemented in Field Programmable gate arrays, using CAD/CAE tools. The simulation results indicated that these algorithms would be able to perform all the required tasks quickly and efficiently. This thesis describes the design of data acquisition system called the Readout Drivers (ROD) . It focuses on the ROD data path for ATLAS Pixel detectors. The data path will be an integrated part of Readout Drivers setup to decode the data from the silicon micro strip detectors and pixel detectors. This research also includes the design of Readout Driver controller. This Module is used to control the operation of the ROD. This module is responsible for the operation of the Pixel decoders bas...

  18. X-ray detectors in medical imaging

    International Nuclear Information System (INIS)

    Spahn, Martin

    2013-01-01

    Healthcare systems are subject to continuous adaptation, following trends such as the change of demographic structures, the rise of life-style related and chronic diseases, and the need for efficient and outcome-oriented procedures. This also influences the design of new imaging systems as well as their components. The applications of X-ray imaging in the medical field are manifold and have led to dedicated modalities supporting specific imaging requirements, for example in computed tomography (CT), radiography, angiography, surgery or mammography, delivering projection or volumetric imaging data. Depending on the clinical needs, some X-ray systems enable diagnostic imaging while others support interventional procedures. X-ray detector design requirements for the different medical applications can vary strongly with respect to size and shape, spatial resolution, frame rates and X-ray flux, among others. Today, integrating X-ray detectors are in common use. They are predominantly based on scintillators (e.g. CsI or Gd 2 O 2 S) and arrays of photodiodes made from crystalline silicon (Si) or amorphous silicon (a-Si) or they employ semiconductors (e.g. Se) with active a-Si readout matrices. Ongoing and future developments of X-ray detectors will include optimization of current state-of-the-art integrating detectors in terms of performance and cost, will enable the usage of large size CMOS-based detectors, and may facilitate photon counting techniques with the potential to further enhance performance characteristics and foster the prospect of new clinical applications

  19. CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

    Science.gov (United States)

    Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

    1996-01-01

    Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

  20. Testing and assembly of the detectors for the Millimeter Bolometer Array Camera on ACT

    International Nuclear Information System (INIS)

    Marriage, T.A.; Chervenak, J.A.; Doriese, W.B.

    2006-01-01

    The Millimeter Bolometer Array Camera (MBAC) for the Atacama Cosmology Telescope consists of three Transition Edge Sensor (TES) arrays to make simultaneous observations of the Cosmic Microwave Background in three frequency bands. MBAC TESs are NASA Goddard Pop-Up Detectors (PUD) which are read-out by NIST time-domain multiplexers. MBAC is constructed by stacking 1x32 TES columns to form the 32x32 element arrays. The arrays are modular (connectorized) at the 1x32 column level such that array assembly is reversible and camera repair possible. Prior to assembly, each column is tested in a quick (2h) cycling 4 He/ 3 He adsorption refrigerator. Tests include measurements of TES current-voltage curves and TES complex impedance

  1. Testing and assembly of the detectors for the Millimeter Bolometer Array Camera on ACT

    Energy Technology Data Exchange (ETDEWEB)

    Marriage, T.A. [Physics Department, Princeton University, Washington Road, Princeton, NJ 08544 (United States)]. E-mail: marriage@princeton.edu; Chervenak, J.A. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Doriese, W.B. [National Institute of Standards, 325 Broadway, Boulder, CO 80305 (United States)

    2006-04-15

    The Millimeter Bolometer Array Camera (MBAC) for the Atacama Cosmology Telescope consists of three Transition Edge Sensor (TES) arrays to make simultaneous observations of the Cosmic Microwave Background in three frequency bands. MBAC TESs are NASA Goddard Pop-Up Detectors (PUD) which are read-out by NIST time-domain multiplexers. MBAC is constructed by stacking 1x32 TES columns to form the 32x32 element arrays. The arrays are modular (connectorized) at the 1x32 column level such that array assembly is reversible and camera repair possible. Prior to assembly, each column is tested in a quick (2h) cycling {sup 4}He/{sup 3}He adsorption refrigerator. Tests include measurements of TES current-voltage curves and TES complex impedance.

  2. Multi-target electrochemical biosensing enabled by integrated CMOS electronics

    International Nuclear Information System (INIS)

    Rothe, J; Lewandowska, M K; Heer, F; Frey, O; Hierlemann, A

    2011-01-01

    An integrated electrochemical measurement system, based on CMOS technology, is presented, which allows the detection of several analytes in parallel (multi-analyte) and enables simultaneous monitoring at different locations (multi-site). The system comprises a 576-electrode CMOS sensor chip, an FPGA module for chip control and data processing, and the measurement laptop. The advantages of the highly versatile system are demonstrated by two applications. First, a label-free, hybridization-based DNA sensor is enabled by the possibility of large-scale integration in CMOS technology. Second, the detection of the neurotransmitter choline is presented by assembling the chip with biosensor microprobe arrays. The low noise level enables a limit of detection of, e.g., 0.3 µM choline. The fully integrated system is self-contained: it features cleaning, functionalization and measurement functions without the need for additional electrical equipment. With the power supplied by the laptop, the system is very suitable for on-site measurements

  3. Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers

    International Nuclear Information System (INIS)

    Ratti, L.; Gaioni, L.; Manghisoni, M.; Re, V.; Traversi, G.

    2010-01-01

    A fine pitch, deep N-well CMOS monolithic active pixel sensor (DNW CMOS MAPS) with sparsified readout architecture and time stamping capabilities has been designed in a vertical integration (3D) technology. In this process, two 130 nm CMOS wafers are face-to-face bonded by means of thermo-compression techniques ensuring both the mechanical stability of the structure and the electrical interconnection between circuits belonging to different layers. This 3D design represents the evolution of a DNW monolithic sensor already fabricated in a planar 130 nm CMOS technology in view of applications to the vertex detector of the International Linear Collider (ILC). The paper is devoted to discussing the main design features and expected performance of the 3D DNW MAPS. Besides describing the front-end circuits and the general architecture of the detector, the work also provides some results from calculations and Monte Carlo device simulations comparing the old 2D solution with the new 3D one and illustrating the attainable detection efficiency improvements.

  4. Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers

    Energy Technology Data Exchange (ETDEWEB)

    Ratti, L., E-mail: lodovico.ratti@unipv.i [Universita di Pavia, Dipartimento di Elettronica, Via Ferrata 1, I-27100 Pavia (Italy); INFN, Sezione di Pavia, Via Bassi 6, I-27100 Pavia (Italy); Gaioni, L. [Universita di Pavia, Dipartimento di Elettronica, Via Ferrata 1, I-27100 Pavia (Italy); INFN, Sezione di Pavia, Via Bassi 6, I-27100 Pavia (Italy); Manghisoni, M.; Re, V.; Traversi, G. [Universita di Bergamo, Dipartimento di Ingegneria Industriale, Via Marconi 5, I-24044 Dalmine (Bulgaria) (Italy); INFN, Sezione di Pavia, Via Bassi 6, I-27100 Pavia (Italy)

    2010-12-11

    A fine pitch, deep N-well CMOS monolithic active pixel sensor (DNW CMOS MAPS) with sparsified readout architecture and time stamping capabilities has been designed in a vertical integration (3D) technology. In this process, two 130 nm CMOS wafers are face-to-face bonded by means of thermo-compression techniques ensuring both the mechanical stability of the structure and the electrical interconnection between circuits belonging to different layers. This 3D design represents the evolution of a DNW monolithic sensor already fabricated in a planar 130 nm CMOS technology in view of applications to the vertex detector of the International Linear Collider (ILC). The paper is devoted to discussing the main design features and expected performance of the 3D DNW MAPS. Besides describing the front-end circuits and the general architecture of the detector, the work also provides some results from calculations and Monte Carlo device simulations comparing the old 2D solution with the new 3D one and illustrating the attainable detection efficiency improvements.

  5. The Design, Implementation, and Performance of the Astro-H SXS Calorimeter Array and Anti-Coincidence Detector

    Science.gov (United States)

    Kilbourne, Caroline A.; Adams, Joseph S.; Brekosky, Regis P.; Chiao, Meng P.; Chervenak, James A.; Eckart, Megan E.; Figueroa-Feliciano, Enectali; Galeazzi, Masimilliano; Grein, Christoph; Jhabvala, Christine A.; hide

    2016-01-01

    The calorimeter array of the JAXA Astro-H (renamed Hitomi) Soft X-ray Spectrometer (SXS) was designed to provide unprecedented spectral resolution of spatially extended cosmic x-ray sources and of all cosmic x-ray sources in the Fe-K band around 6 keV, enabling essential plasma diagnostics. The SXS has a square array of 36 microcalorimeters at the focal plane. These calorimeters consist of ion-implanted silicon thermistors and HgTe thermalizing x-ray absorbers. These devices have demonstrated a resolution of better than 4.5 eV at 6 keV when operated at a heat-sink temperature of 50 mK. We will discuss the basic physical parameters of this array, including the array layout, thermal conductance of the link to the heat sink, resistance function, absorber details, and means of attaching the absorber to the thermistor-bearing element. We will also present the thermal characterization of the whole array, including thermal conductance and crosstalk measurements and the results of pulsing the frame temperature via alpha particles, heat pulses, and the environmental background. A silicon ionization detector is located behind the calorimeter array and serves to reject events due to cosmic rays. We will briefly describe this anti-coincidence detector and its performance.

  6. Fabrication of Detector Arrays for the SPT-3G Receiver

    Science.gov (United States)

    Posada, C. M.; Ade, P. A. R.; Ahmed, Z.; Anderson, A. J.; Austermann, J. E.; Avva, J. S.; Thakur, R. Basu; Bender, A. N.; Benson, B. A.; Carlstrom, J. E.; Carter, F. W.; Cecil, T.; Chang, C. L.; Cliche, J. F.; Cukierman, A.; Denison, E. V.; de Haan, T.; Ding, J.; Divan, R.; Dobbs, M. A.; Dutcher, D.; Everett, W.; Foster, A.; Gannon, R. N.; Gilbert, A.; Groh, J. C.; Halverson, N. W.; Harke-Hosemann, A. H.; Harrington, N. L.; Henning, J. W.; Hilton, G. C.; Holzapfel, W. L.; Huang, N.; Irwin, K. D.; Jeong, O. B.; Jonas, M.; Khaire, T.; Kofman, A. M.; Korman, M.; Kubik, D.; Kuhlmann, S.; Kuo, C. L.; Lee, A. T.; Lowitz, A. E.; Meyer, S. S.; Michalik, D.; Miller, C. S.; Montgomery, J.; Nadolski, A.; Natoli, T.; Nguyen, H.; Noble, G. I.; Novosad, V.; Padin, S.; Pan, Z.; Pearson, J.; Rahlin, A.; Ruhl, J. E.; Saunders, L. J.; Sayre, J. T.; Shirley, I.; Shirokoff, E.; Smecher, G.; Sobrin, J. A.; Stan, L.; Stark, A. A.; Story, K. T.; Suzuki, A.; Tang, Q. Y.; Thompson, K. L.; Tucker, C.; Vale, L. R.; Vanderlinde, K.; Vieira, J. D.; Wang, G.; Whitehorn, N.; Yefremenko, V.; Yoon, K. W.; Young, M. R.

    2018-05-01

    The South Pole Telescope third-generation (SPT-3G) receiver was installed during the austral summer of 2016-2017. It is designed to measure the cosmic microwave background across three frequency bands centered at 95, 150, and 220 GHz. The SPT-3G receiver has ten focal plane modules, each with 269 pixels. Each pixel features a broadband sinuous antenna coupled to a niobium microstrip transmission line. In-line filters define the desired band-passes before the signal is coupled to six bolometers with Ti/Au/Ti/Au transition edge sensors (three bands × two polarizations). In total, the SPT-3G receiver is composed of 16,000 detectors, which are read out using a 68× frequency-domain multiplexing scheme. In this paper, we present the process employed in fabricating the detector arrays.

  7. Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications

    Directory of Open Access Journals (Sweden)

    Kiyotaka Sasagawa

    2010-12-01

    Full Text Available In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors’ architecture on the basis of the type of electric measurement or imaging functionalities.

  8. Testing the characteristics of a neutron detector array by Monte-Carlo simulations

    International Nuclear Information System (INIS)

    Timis, C.; Cruceru, I.; Sandu, M.; Borcea, C.; Buta, A.; Negoita, F.; Angelique, J.C.; Martin, T.; Peter, J.; Grevy, S.; Lienard, E.; Orr, N.A.

    1998-01-01

    The characteristics of the neutron detector array TONNERRE have been determined experimentally via preliminary tests with a 252 Cf source and by means of simulation using a modified version of the Monte-Carlo program of Cecil et al. Of particular interest is the intrinsic detection efficiency. As it is well known, the neutron detection efficiency for one element of the detector array, depends on the threshold for the light collection (bias) expressed in energy electron equivalent. The experimental efficiencies for five neutron energies and for a bias of 80 KeV ee are presented. The efficiencies for three thresholds and neutron energies between 1-10 MeV are simulated. The neutron energy is determined by TOF over a flight path, s, and the relative energy resolution is given as a function of σ s and σ t (the uncertainties in the flight path), s (uniform as a function of depth) and flight time, t. The mean time resolution was 1.13 ns which gives a TOF resolution of 1.48 ns. That gives a relative energy resolution which increases slowly from 2% at E n =1 MeV to 3.5% at 5 MeV. Position resolution along one module is 12 cm. To help boosting the efficiency, the elements can be arranged in two layers, but that complicates the analysis by enhancing the effects of cross-talk and out-scattering. Cross-talk is the familiar problem of one neutron creating signals in two separate detectors. In out-scattering, a neutron scatters from the non-active part of a detector and is then detected in a different detector with incorrect position and TOF. While methods exist for identifying and eliminating cross-talk events, there are no methods available for identifying out-scattered events. For the case of two layers and a bias of 80 KeV ee, simulated efficiency of two superposed elements versus neutron energy, the out-scattering probability and the probability of cross-talk are presented. The out-scattering probability comes mainly from events when neutrons scatter first on carbon nuclei

  9. Noise analysis and performance of a selfscanned linear InSb detector array

    International Nuclear Information System (INIS)

    Finger, G.; Meyer, M.; Moorwood, A.F.M.

    1987-01-01

    A noise model for detectors operated in the capacitive discharge mode is presented. It is used to analyze the noise performance of the ESO nested timing readout technique applied to a linear 32-element InSb array which is multiplexed by a silicon switched-FET shift register. Analysis shows that KTC noise of the videoline is the major noise contribution; it can be eliminated by weighted double-correlated sampling. Best noise performance of this array is achieved at the smallest possible reverse bias voltage (not more than 20 mV) whereas excess noise is observed at higher reverse bias voltages. 5 references

  10. MUST: A silicon strip detector array for radioactive beam experiments

    CERN Document Server

    Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

  11. Local polarization phenomena in In-doped CdTe x-ray detector arrays

    International Nuclear Information System (INIS)

    Sato, Toshiyuki; Sato, Kenji; Ishida, Shinichiro; Kiri, Motosada; Hirooka, Megumi; Yamada, Masayoshi; Kanamori, Hitoshi

    1995-01-01

    Local polarization phenomena have been studied in detector arrays with the detector element size of 500 microm x 500 microm, which are fabricated from high-resistivity In-doped CdTe crystals grown by the vertical Bridgman technique. It has been found for the first time that a polarization effect, which is characterized by a progressive decrease of the pulse counting rate with increasing photon fluence, strongly depends on the detector elements, that is, the portion of crystals used. The influence of several parameters, such as the applied electric field strength, time, and temperature, on this local polarization effect is also investigated. From the photoluminescence measurements of the inhomogeneity of In dopant, it is concluded that the local polarization effect observed here originates from a deep level associated with In dopant in CdTe crystals

  12. Trigger electronics of the new Fluorescence Detectors of the Telescope Array Experiment

    International Nuclear Information System (INIS)

    Tameda, Yuichiro; Taketa, Akimichi; Smith, Jeremy D.; Tanaka, Manobu; Fukushima, Masaki; Jui, Charles C.H.; Kadota, Ken'ichi; Kakimoto, Fumio; Matsuda, Takeshi; Matthews, John N.; Ogio, Shoichi; Sagawa, Hiroyuki; Sakurai, Nobuyuki; Shibata, Tatsunobu; Takeda, Masahiro; Thomas, Stanton B.; Tokuno, Hisao; Tsunesada, Yoshiki

    2009-01-01

    The Telescope Array Project is an experiment designed to observe Ultra High Energy Cosmic Rays via a 'hybrid' detection technique utilizing both fluorescence light detectors (FDs) and scintillator surface particle detectors (SDs). We have installed three FD stations and 507 SDs in the Utah desert, and initiated observations from March 2008. The northern FD station reuses 14 telescopes from the High Resolution Fly's Eye, HiRes-I station. Each of the two southern FD stations contains 12 new telescopes utilizing new FADC electronics. Each telescope is instrumented with a camera composed of 256 PMTs. Since the detectors are composed of many PMTs and each PMT detects fluorescence photons together with the vast amount of night sky background, a sophisticated triggering system is required. In this paper, we describe the trigger electronics of these new FD stations. We also discuss performance of the FDs with this triggering system, in terms of efficiencies and apertures for various detector configurations.

  13. CMOS Active-Pixel Image Sensor With Simple Floating Gates

    Science.gov (United States)

    Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

    1996-01-01

    Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

  14. MT6425CA: a 640 X 512-25μm CTIA ROIC for SWIR InGaAs detector arrays

    Science.gov (United States)

    Eminoglu, Selim; Mahsereci, Yigit Uygar; Altiner, Caglar; Akin, Tayfun

    2012-06-01

    This paper reports the development of a new CTIA ROIC (MT6425CA) suitable for SWIR InGaAs detector arrays. MT6425CA has a format of 640 × 512 with a pixel pitch of 25 μm and has a system-on-chip architecture, where all the critical timing and biasing for this ROIC are generated by programmable blocks on-chip. MT6425CA is a highly configurable and flexible ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. The ROIC runs on 3.3V supply voltage at nominal clock speed of 10 MHz clock. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While- Read (IWR) modes. The CTIA type pixel input circuitry has a full-well-capacity (FWC) of about 320,000e-, with an input referred read noise of less than 110e- at 300K. MT6425CA has programmable number of outputs, where 4, 2, or 1 output can be selected along with an analog reference for pseudo-differential operation. The integration time can be programmed up to 1s in steps of 0.1μs. The gain and offset in the ROIC can be programmed to adjust the output offset and voltage swing. ROIC dissipates less than 130mW from a 3.3V supply at full speed and full frame size with 4 outputs, providing both low-power and low-noise operation. MT6425CA is fabricated using a modern mixed-signal CMOS process on 200mm CMOS wafers with a high yield above 75%, yielding more than 50 working parts per wafer. It has been silicon verified, and tested parts are available either in wafer and die levels with a complete documentation including test reports and wafer maps. A USB based camera electronics and camera development platform with software are available to help customers to evaluate the imaging performance of MT6425CA in a fast and efficient way.

  15. A Multipurpose CMOS Platform for Nanosensing

    Directory of Open Access Journals (Sweden)

    Alberto Bonanno

    2016-11-01

    Full Text Available This paper presents a customizable sensing system based on functionalized nanowires (NWs assembled onto complementary metal oxide semiconductor (CMOS technology. The Micro-for-Nano (M4N chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  16. A Multipurpose CMOS Platform for Nanosensing.

    Science.gov (United States)

    Bonanno, Alberto; Sanginario, Alessandro; Marasso, Simone L; Miccoli, Beatrice; Bejtka, Katarzyna; Benetto, Simone; Demarchi, Danilo

    2016-11-30

    This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW-229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  17. Far infrared thermal detectors for laser radiometry using a carbon nanotube array

    Energy Technology Data Exchange (ETDEWEB)

    Lehman, John H.; Lee, Bob; Grossman, Erich N.

    2011-07-20

    We present a description of a 1.5 mm long, vertically aligned carbon nanotube array (VANTA) on a thermopile and separately on a pyroelectric detector. Three VANTA samples, having average lengths of 40 {mu}m, 150 {mu}m, and 1.5 mm were evaluated with respect to reflectance at a laser wavelength of 394 {mu}m(760 GHz), and we found that the reflectance decreases substantially with increasing tube length, ranging from 0.38 to 0.23 to 0.01, respectively. The responsivity of the thermopile by electrical heating (98.4 mA/W) was equal to that by optical heating (98.0 mA/W) within the uncertainty of the measurement. We analyzed the frequency response and temporal response and found a thermal decay period of 500 ms, which is consistent with the specific heat of comparable VANTAs in the literature. The extremely low (0.01) reflectance of the 1.5 mm VANTAs and the fact that the array is readily transferable to the detector's surface is, to our knowledge, unprecedented.

  18. Performance studies of X3 silicon detectors for the future ELISSA array at ELI-NP

    Science.gov (United States)

    Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; State, A.

    2018-05-01

    ELISSA is an array of silicon strip detectors under construction at the ELI-NP facility for measurements of photodissociation reactions using high-brilliance, quasi monoenergetic gamma beams. The detection system consists of 35 single-sided position-sensitive X3 detectors arranged in a cylindrical configuration and eight QQQ3 detectors as end-caps. A batch of forty X3 detectors have been tested at ELI-NP. The energy and position resolution, ballistic deficit, leakage currents, and depletion voltage were measured and analyzed. Measurements of the energy resolution were carried out using two read-out electronic chains, one based on multichannel preamplifiers and another based on multiplexers.

  19. Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

    Science.gov (United States)

    Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

    2018-02-01

    HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1-MeV- neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

  20. Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

    International Nuclear Information System (INIS)

    Wang Pengfei; Li Zhankui; Li Haixia

    2014-01-01

    Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

  1. A Biologically Inspired CMOS Image Sensor

    CERN Document Server

    Sarkar, Mukul

    2013-01-01

    Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with their own photoreceptor arrays.  The visual system of insects allows them to fly with a limited intelligence and brain processing power. A CMOS image sensor replicating the perception of vision in insects is discussed and designed in this book for industrial (machine vision) and medical applications. The CMOS metal layer is used to create an embedded micro-polarizer able to sense polarization information. This polarization information is shown to be useful in applications like real time material classification and autonomous agent navigation. Further the sensor is equipped with in pixel analog and digital memories which allow variation of the dynamic range and in-pixel b...

  2. Instrumentation development for an array of water Cherenkov detectors for extensive air shower experiments

    Science.gov (United States)

    Sheidaei, F.; Bahmanabadi, M.; Keivani, A.; Samimi, J.

    2009-11-01

    A new small array of Cherenkov detectors has been deployed in Tehran, 1200 m above sea level. This array contains four tanks of distilled water with a diameter of 64 cm and a height of 130 cm. The effective area of each tank is about 1382 cm2. They are used to detect air showers and to record the arrival time of the secondary particles. We have collected about 640 000 extensive air showers (EAS) in 8298 h of observation time from November 2006 to October 2007. The distribution of air showers in zenith and azimuth angles has been studied and a cosnθ distribution with n = 6.02 ± 0.01 was obtained for the zenith angle distribution. An asymmetry has been observed in the azimuthal distribution of EAS of cosmic rays due to geomagnetic field. The first and second amplitudes of the asymmetry are AI = 0.183 ± 0.001 and AII = 0.038 ± 0.001. Since the recent results are in good agreement with our previous results of scintillation detectors, and tanks of distilled water are cheaper, we prefer to use them instead of scintillators in a future larger array. By simulation, we have improved the size of the detectors to yield the highest efficiency. The best dimensions for each tank with a photomultiplier tube in the center of its lid are 40 cm in diameter and 60 cm in height.

  3. Monte Carlo simulation of the standardization of {sup 22}Na using scintillation detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Y., E-mail: yss.sato@aist.go.j [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Quantum Radiation Division, Radioactivity and Neutron Section, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Murayama, H. [National Institute of Radiological Sciences, 4-9-1, Anagawa, Inage, Chiba 263-8555 (Japan); Yamada, T. [Japan Radioisotope Association, 2-28-45, Hon-komagome, Bunkyo, Tokyo 113-8941 (Japan); National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Quantum Radiation Division, Radioactivity and Neutron Section, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Tohoku University, 6-6, Aoba, Aramaki, Aoba, Sendai 980-8579 (Japan); Hasegawa, T. [Kitasato University, 1-15-1, Kitasato, Sagamihara, Kanagawa 228-8555 (Japan); Oda, K. [Tokyo Metropolitan Institute of Gerontology, 1-1 Nakacho, Itabashi-ku, Tokyo 173-0022 (Japan); Unno, Y.; Yunoki, A. [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Quantum Radiation Division, Radioactivity and Neutron Section, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2010-07-15

    In order to calibrate PET devices by a sealed point source, we contrived an absolute activity measurement method for the sealed point source using scintillation detector arrays. This new method was verified by EGS5 Monte Carlo simulation.

  4. Vertex-Detector R&D for CLIC

    OpenAIRE

    Dannheim, Dominik

    2013-01-01

    A detector concept based on hybrid planar pixel-detector technology is under development for the CLIC vertex detector. It comprises fast, low-power and small-pitch readout ASICs implemented in 65 nm CMOS technology (CLICpix) coupled to ultra-thin sensors via low-mass interconnects. The power dissipation of the readout chips is reduced by means of power pulsing, allowing for a cooling system based on forced gas flow. In this paper the CLIC vertex-detector requirements are reviewed and the curr...

  5. The performance of a prototype array of water Cherenkov detectors for the LHAASO project

    Energy Technology Data Exchange (ETDEWEB)

    An, Q. [University of Science and Technology of China, Hefei 230026 (China); State Key Laboratory of Particle Detection and Electronics, Beijing 100049 (China); Bai, Y.X.; Bi, X.J.; Cao, Z. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chang, J.F. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); State Key Laboratory of Particle Detection and Electronics, Beijing 100049 (China); Chen, G.; Chen, M.J. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, S.M. [Tsinghua University, Beijing 100084 (China); Chen, S.Z. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, T.L. [University of Tibet, Lhasa 851600 (China); Chen, X. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, Y.T. [University of Yunnan, Kunming 650091 (China); Cui, S.W. [Normal University of Hebei, Shijiazhuang 050016 (China); Dai, B.Z. [University of Yunnan, Kunming 650091 (China); Du, Q. [Tsinghua University, Beijing 100084 (China); Danzengluobu [University of Tibet, Lhasa 851600 (China); Feng, C.F. [University of Shandong, Jinan 250100 (China); Feng, S.H.; Gao, B. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Gao, S.Q. [National Space Science Center, Chinese Academy of Sciences, Beijing 100190 (China); and others

    2013-10-01

    A large high-altitude air-shower observatory (LHAASO) is to be built at Shangri-La, Yunnan Province, China. This observatory is intended to conduct sub-TeV gamma astronomy, and as an important component of the LHAASO project, a water Cherenkov detector array (WCDA) is proposed. To investigate engineering issues and fully understand the water Cherenkov technique for detecting air showers, a prototype array at 1% scale of the LHAASO-WCDA has been built at Yang-Ba-Jing, Tibet, China. This paper introduces the prototype array setup and studies its performance by counting rate of each photomultiplier tube (PMT), trigger rates at different PMT multiplicities, and responses to air showers. Finally, the reconstructed shower directions and angular resolutions of the detected showers for the prototype array are given. -- Highlights: • The technique of the water Cherenkov array is studied. • Engineering issues of the water Cherenkov array are investigated. • The PMTs and electronics of the water Cherenkov array are tested. • Some key parameters of the water Cherenkov array are measured.

  6. The performance of a prototype array of water Cherenkov detectors for the LHAASO project

    International Nuclear Information System (INIS)

    An, Q.; Bai, Y.X.; Bi, X.J.; Cao, Z.; Chang, J.F.; Chen, G.; Chen, M.J.; Chen, S.M.; Chen, S.Z.; Chen, T.L.; Chen, X.; Chen, Y.T.; Cui, S.W.; Dai, B.Z.; Du, Q.; Danzengluobu; Feng, C.F.; Feng, S.H.; Gao, B.; Gao, S.Q.

    2013-01-01

    A large high-altitude air-shower observatory (LHAASO) is to be built at Shangri-La, Yunnan Province, China. This observatory is intended to conduct sub-TeV gamma astronomy, and as an important component of the LHAASO project, a water Cherenkov detector array (WCDA) is proposed. To investigate engineering issues and fully understand the water Cherenkov technique for detecting air showers, a prototype array at 1% scale of the LHAASO-WCDA has been built at Yang-Ba-Jing, Tibet, China. This paper introduces the prototype array setup and studies its performance by counting rate of each photomultiplier tube (PMT), trigger rates at different PMT multiplicities, and responses to air showers. Finally, the reconstructed shower directions and angular resolutions of the detected showers for the prototype array are given. -- Highlights: • The technique of the water Cherenkov array is studied. • Engineering issues of the water Cherenkov array are investigated. • The PMTs and electronics of the water Cherenkov array are tested. • Some key parameters of the water Cherenkov array are measured

  7. Precision tracking with a single gaseous pixel detector

    NARCIS (Netherlands)

    Tsigaridas, S.; van Bakel, N.; Bilevych, Y.; Gromov, V.; Hartjes, F.; Hessey, N.P.; de Jong, P.; Kluit, R.

    2015-01-01

    The importance of micro-pattern gaseous detectors has grown over the past few years after successful usage in a large number of applications in physics experiments and medicine. We develop gaseous pixel detectors using micromegas-based amplification structures on top of CMOS pixel readout chips.

  8. A high-speed 0.35μm CMOS optical communication link

    Science.gov (United States)

    Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Bogalecki, Alfons W.; Alberts, Antonie C.; Rademeyer, Pieter

    2012-01-01

    The idea of integrating a light emitter and detector in the cost effective and mature technology which is CMOS remains an attractive one. Silicon light emitters, used in avalanche breakdown, are demonstrated to switch at frequencies above 1 GHz whilst still being electrically detected, a three-fold increase on previous reported results. Utilizing novel BEOLstack reflectors and increased array sizes have resulted in an increased power efficiency allowing multi-Mb/s data rates. In this paper we present an all-silicon optical communication link with data rates exceeding 10 Mb/s at a bit error rate of less than 10-12, representing a ten-fold increase over the previous fastest demonstrated silicon data link. Data rates exceeding 40 Mb/s are also presented and evaluated. The quality of the optical link is established using both eye diagram measurements as well as a digital communication system setup. The digital communication system setup comprises the generation of 232-1 random data, 8B/10B encoding and decoding, data recovery and the subsequent bit error counting.

  9. Technologies for Future Vertex and Tracking Detectors at CLIC

    CERN Document Server

    Spannagel, Simon

    2018-01-01

    CLIC is a proposed linear e$^{+}$e$^{-}$ collider with center-of-mass energies of up to 3 TeV. Its main objectives are precise top quark and Higgs boson measurements, as well as searches for Beyond Standard Model physics. To meet the physics goals, the vertex and tracking detectors require not only a spatial resolution of a few micrometers and a very low material budget, but also timing capabilities with a precision of a few nanoseconds to allow suppression of beam-induced backgrounds. Different technologies using hybrid silicon detectors are explored for the vertex detectors, such as dedicated readout ASICs, small-pitch active edge sensors as well as capacitively coupled High-Voltage CMOS sensors. Monolithic sensors are considered as an option for the tracking detector, and a prototype using a CMOS process with a high-resistivity epitaxial layer is being designed. Different designs using a silicon-on-insulator process are under investigation for both vertex and tracking detector. All prototypes are evaluate...

  10. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-11-15

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

  11. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    International Nuclear Information System (INIS)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

    2012-01-01

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

  12. A LSO scintillator array for a PET detector module with depth of interaction measurement

    International Nuclear Information System (INIS)

    Huber, J.S.; Moses, W.W.; Andreaco, M.S.; Petterson, O.

    2000-01-01

    We present construction methods and performance results for a production scintillator array of 64 optically isolated, 3 mm x 3 mm x 30 mm sized LSO crystals. This scintillator array has been developed for a PET detector module consisting of the 8x8 LSO array coupled on one end to a single photomultiplier tube (PMT) and on the opposite end to a 64 pixel array of silicon photodiodes (PD). The PMT provides an accurate timing pulse and initial energy discrimination, the PD identifies the crystal of interaction, the sum provides a total energy signal, and the PD/(PD+PMT) ratio determines the depth of interaction (DOI). Unlike the previous LSO array prototypes, we now glue Lumirror reflector material directly onto 4 sides of each crystal to obtain an easily manufactured, mechanically rugged array with our desired depth dependence. With 511 keV excitation, we obtain a total energy signal of 3600 electrons, pulse-height resolution of 25% fwhm, and 6-15 mm fwhm DOI resolution

  13. CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

    Science.gov (United States)

    Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

    2010-12-01

    We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

  14. Development of high-resolution gamma detector using sub-mm GAGG crystals coupled to TSV-MPPC array

    International Nuclear Information System (INIS)

    Lipovec, A.; Shimazoe, K.; Takahashi, H.

    2016-01-01

    In this study a high-resolution gamma detector based on an array of sub-millimeter Ce:GAGG (Cerium doped Gd 3 Al 2 Ga 3 O 12 ) crystals read out by an array of surface-mount type of TSV-MPPC was developed. MPPC sensor from Hamamatsu which has a 26 by 26 mm 2 detector area with 64 channels was used. One channel has a 3 by 3 mm 2 photosensitive area with 50 μ m pitch micro cells. MPPC sensor provides 576 mm 2 sensing area and was used to decode 48 by 48 array with 0.4 by 0.4 by 20 mm 3 Ce:GAGG crystals of 500 μ m pitch. The base of the detector with the crystal module was mounted to a read out board which consists of charge division circuit, thus allowing for a read out of four channels to identify the position of the incident event on the board. The read out signals were amplified using charge sensitive amplifiers. The four amplified signals were digitized and analyzed to produce a position sensitive event. For the performance analysis a 137 Cs source was used. The produced events were used for flood histogram and energy analysis. The effects of the glass thickness between the Ce:GAGG and MPPC were analyzed using the experimental flood diagrams and Geant4 simulations. The glass between the scintillator and the detector allows the spread of the light over different channels and is necessary if the channel's sensitive area is bigger than the scintillator's area. The initial results demonstrate that this detector module is promising and could be used for applications requiring compact and high-resolution detectors. Experimental results show that the detectors precision increases using glass guide thickness of 1.35 mm and 1.85 mm; however the precision using 2.5 mm are practically the same as if using 0.8 mm or 1.0 mm glass guide thicknesses. In addition, simulations using Geant4 indicate that the light becomes scarcer if thicker glass is used, thus reducing the ability to indicate which crystal was targeted. When 2.5 mm glass thickness is used, the scarce

  15. 1024x1024 resistive emitter array design and fabrication status

    Science.gov (United States)

    Bryant, Paul T.; Oleson, Jim; McHugh, Stephen W.; Beuville, Eric; Schlesselmann, John D.; Woolaway, James T.; Barskey, Steve; Solomon, Steven L.; Joyner, Thomas W.

    2002-07-01

    Santa Barbara Infrared (SBIR) is producing a high performance 1,024 x 1,024 Large Format Resistive emitter Array (LFRA) for use in the next generation of IR Scene Projectors (IRSPs). LFRA requirements were developed through close cooperation with the Tri-Service IR Scene Projector working group, and through detailed trade studies sponsored by the OSD Central T&E Investment Program (CTEIP) and a Phase I US Navy Small Business Innovative Research (SBIR) contract. The CMOS Read-In Integrated Circuit (RIIC) is being designed by SBIR and Indigo Systems under a Small Business Innovative Research (SBIR) contract. Performance and features include 750 K MWIR maximum apparent temperature, 5 ms radiance rise time, 200 Hz full frame update, and 400 Hz window mode operation. Ten 8-inch CMOS wafers will be fabricated and characterized in mid-2002, followed by emitter fabrication in late 2002. This paper discusses array performance, requirements flow-down, array design, fabrication of 2 X 2-inch CMOS devices, and plans for subsequent RIIC wafer test and emitter pixel fabrication.

  16. Planar pixel sensors in commercial CMOS technologies

    Energy Technology Data Exchange (ETDEWEB)

    Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn, Nussallee 12, 53115 Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany)

    2015-07-01

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  17. An acquisition system for CMOS imagers with a genuine 10 Gbit/s bandwidth

    International Nuclear Information System (INIS)

    Guérin, C.; Mahroug, J.; Tromeur, W.; Houles, J.; Calabria, P.; Barbier, R.

    2012-01-01

    This paper presents a high data throughput acquisition system for pixel detector readout such as CMOS imagers. This CMOS acquisition board offers a genuine 10 Gbit/s bandwidth to the workstation and can provide an on-line and continuous high frame rate imaging capability. On-line processing can be implemented either on the Data Acquisition Board or on the multi-cores workstation depending on the complexity of the algorithms. The different parts composing the acquisition board have been designed to be used first with a single-photon detector called LUSIPHER (800×800 pixels), developed in our laboratory for scientific applications ranging from nano-photonics to adaptive optics. The architecture of the acquisition board is presented and the performances achieved by the produced boards are described. The future developments (hardware and software) concerning the on-line implementation of algorithms dedicated to single-photon imaging are tackled.

  18. The performance of a prototype array of water Cherenkov detectors for the LHAASO project

    Science.gov (United States)

    An, Q.; Bai, Y. X.; Bi, X. J.; Cao, Z.; Chang, J. F.; Chen, G.; Chen, M. J.; Chen, S. M.; Chen, S. Z.; Chen, T. L.; Chen, X.; Chen, Y. T.; Cui, S. W.; Dai, B. Z.; Du, Q.; Danzengluobu; Feng, C. F.; Feng, S. H.; Gao, B.; Gao, S. Q.; Ge, M. M.; Gu, M. H.; Hao, X. J.; He, H. H.; Hou, C.; Hu, H. B.; Hu, X. B.; Huang, J.; Huang, W. P.; Jia, H. Y.; Jiang, K.; Liu, J.; Liu, J. L.; Liu, J. S.; Liu, S. B.; Liu, Y.; Liu, Y. N.; Li, Q. J.; Li, C.; Li, F.; Li, H. C.; Li, X. R.; Lu, H.; Lv, H. K.; Mao, Y. J.; Ma, L. L.; Ma, X. H.; Shao, J.; Shao, M.; Sheng, X. D.; Sun, G. X.; Sun, Z. B.; Tang, Z. B.; Wu, C. Y.; Wu, H. R.; Wu, Q.; Xiao, G.; Xu, Y.; Yang, Q. Y.; Yang, R.; Yao, Z. G.; You, X. H.; Yuan, A. F.; Zhang, B. K.; Zhang, H. M.; Zhang, S. R.; Zhang, S. S.; Zhang, X. Y.; Zhang, Y.; Zhang, L.; Zhai, L. M.; Zhao, J.; Zhao, L.; Zhao, Z. G.; Zha, M.; Zhou, B.; Zhu, F. R.; Zhu, K. J.; Zhuang, J.; Zuo, X.

    2013-10-01

    A large high-altitude air-shower observatory (LHAASO) is to be built at Shangri-La, Yunnan Province, China. This observatory is intended to conduct sub-TeV gamma astronomy, and as an important component of the LHAASO project, a water Cherenkov detector array (WCDA) is proposed. To investigate engineering issues and fully understand the water Cherenkov technique for detecting air showers, a prototype array at 1% scale of the LHAASO-WCDA has been built at Yang-Ba-Jing, Tibet, China. This paper introduces the prototype array setup and studies its performance by counting rate of each photomultiplier tube (PMT), trigger rates at different PMT multiplicities, and responses to air showers. Finally, the reconstructed shower directions and angular resolutions of the detected showers for the prototype array are given.

  19. EROIC: a BiCMOS pseudo-gaussian shaping amplifier for high-resolution X-ray spectroscopy

    Science.gov (United States)

    Buzzetti, Siro; Guazzoni, Chiara; Longoni, Antonio

    2003-10-01

    We present the design and complete characterization of a fifth-order pseudo-gaussian shaping amplifier with 1 μs shaping time. The circuit is optimized for the read-out of signals coming from Silicon Drift Detectors for high-resolution X-ray spectroscopy. The novelty of the designed chip stands in the use of a current feedback loop to place the poles in the desired position on the s-plane. The amplifier has been designed in 0.8 μm BiCMOS technology and fully tested. The EROIC chip comprises also the peak stretcher, the peak detector, the output buffer to drive the external ADC and the pile-up rejection system. The circuit needs a single +5 V power supply and the dissipated power is 5 mW per channel. The digital outputs can be directly coupled to standard digital CMOS ICs. The measured integral-non-linearity of the whole chip is below 0.05% and the achieved energy resolution at the Mn Kα line detected by a 5 mm 2 Peltier-cooled Silicon Drift Detector is 167 eV FWHM.

  20. EROIC: a BiCMOS pseudo-gaussian shaping amplifier for high-resolution X-ray spectroscopy

    International Nuclear Information System (INIS)

    Buzzetti, Siro; Guazzoni, Chiara; Longoni, Antonio

    2003-01-01

    We present the design and complete characterization of a fifth-order pseudo-gaussian shaping amplifier with 1 μs shaping time. The circuit is optimized for the read-out of signals coming from Silicon Drift Detectors for high-resolution X-ray spectroscopy. The novelty of the designed chip stands in the use of a current feedback loop to place the poles in the desired position on the s-plane. The amplifier has been designed in 0.8 μm BiCMOS technology and fully tested. The EROIC chip comprises also the peak stretcher, the peak detector, the output buffer to drive the external ADC and the pile-up rejection system. The circuit needs a single +5 V power supply and the dissipated power is 5 mW per channel. The digital outputs can be directly coupled to standard digital CMOS ICs. The measured integral-non-linearity of the whole chip is below 0.05% and the achieved energy resolution at the Mn Kα line detected by a 5 mm 2 Peltier-cooled Silicon Drift Detector is 167 eV FWHM

  1. A high speed, low power consumption LVDS interface for CMOS pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhan, E-mail: sz1134@163.com [Dalian University of Technology, No. 2 Linggong Road, 116024 Dalian (China); Tang, Zhenan, E-mail: tangza@dlut.edu.cn [Dalian University of Technology, No. 2 Linggong Road, 116024 Dalian (China); Tian, Yong [Dalian University of Technology, No. 2 Linggong Road, 116024 Dalian (China); Pham, Hung; Valin, Isabelle; Jaaskelainen, Kimmo [IPHC, 23 rue du Loess 67037 Strasbourg (France); CNRS, UMR7178, 67037 Strasbourg (France)

    2015-01-01

    The use of CMOS Pixel Sensors (CPSs) offers a promising approach to the design of vertex detectors in High Energy Physics (HEP) experiments. As the CPS equipping the upgraded Solenoidal Tracker at RHIC (STAR) pixel detector, ULTIMATE perfectly illustrates the potential of CPSs for HEP applications. However, further development of CPSs with respect to readout speed is required to fulfill the readout time requirement of the next generation HEP detectors, such as the upgrade of A Large Ion Collider Experiment (ALICE) Inner Tracking System (ITS), the International Linear Collider (ILC), and the Compressed Baryonic Matter (CBM) vertex detectors. One actual limitation of CPSs is related to the speed of the Low-Voltage Differential Signaling (LVDS) circuitry implementing the interface between the sensor and the Data Acquisition (DAQ) system. To improve the transmission rate while keeping the power consumption at a low level, a source termination technique and a special current comparator were adopted for the LVDS driver and receiver, respectively. Moreover, hardening techniques are used. The circuitry was designed and submitted for fabrication in a 0.18-µm CMOS Image Sensor (CIS) process at the end of 2011. The test results indicated that the LVDS driver and receiver can operate properly at the data rate of 1.2 Gb/s with power consumption of 19.6 mW.

  2. A BGO detector array and its application in intermediate energy heavy ion experiments

    International Nuclear Information System (INIS)

    Li Zuyu; Jin Genming; He Zhiyong; Duan Limin; Wu Heyu; Qi Yujin; Luo Qingzheng; Zhang Baoguo; Wen Wanxin; Dai Guangxi

    1996-01-01

    A BGO crystal (Bi 4 Ge 3 O 12 ) as the E detector of ΔE-E for identification of reaction products has been used for detecting the charged particles emitting from the 25 MeV 40 Ar induced reaction. The responses of the BGO crystal to various light charged particles were measured. A close-packed hexagonal array consisting of thirteen ΔE-E telescopes (Si-BGO) has been developed to detect the light charged particles interfering with each other in intermediate-energy heavy-ion induced reactions. Some applications of this telescope array are also described. (orig.)

  3. Assessment of array scintillation detector for follicle thyroid 2-d image acquisition using Monte Carlo simulation

    International Nuclear Information System (INIS)

    Silva, Carlos Borges da; Braz, Delson

    2008-01-01

    Full text: This work presents an innovative study to find out the adequate scintillation inorganic detector array to be used coupled to a specific light photo sensor, a charge coupled device (CCD), through a fiber optic plate. The goal is to choose the type of detector that fits a 2-dimensional imaging acquisition of a cell thyroid tissue application with high resolution and detection efficiency in order to map a follicle image using gamma radiation emission. A point or volumetric source-detector simulation by using a MCNP4B general code, considering different source energies, detector materials and geometry including pixel sizes and reflector types was performed. In this study, simulations were performed for 7 x 7, 31 x 31 and 127 x 127 arrays using CsI(Tl), BGO, CdWO 4 , LSO, GOS and GSO scintillation detectors with pixel dimensions ranging from 1 x 1 cm 2 to 10 x 10 μm 2 and radiation thickness ranging from 1 mm to 10 mm. The effect of all these parameters was investigated to find the best source-detector system that results in an image with the best contrast details. The results showed that it is possible to design a specific imaging system that allows searching for in-vitro studies, specifically in radiobiology applied to endocrine physiology. A 2D image of two thyroid follicles simulated by using MCNP4B code is shown

  4. Efficiency calibration and coincidence summing correction for large arrays of NaI(Tl) detectors in soccer-ball and castle geometries

    International Nuclear Information System (INIS)

    Anil Kumar, G.; Mazumdar, I.; Gothe, D.A.

    2009-01-01

    Efficiency calibration and coincidence summing correction have been performed for two large arrays of NaI(Tl) detectors in two different configurations. They are, a compact array of 32 conical detectors of pentagonal and hexagonal shapes in soccer-ball geometry and an array of 14 straight hexagonal NaI(Tl) detectors in castle geometry. Both of these arrays provide a large solid angle of detection, leading to considerable coincidence summing of gamma rays. The present work aims to understand the effect of coincidence summing of gamma rays while determining the energy dependence of efficiencies of these two arrays. We have carried out extensive GEANT4 simulations with radio-nuclides that decay with a two-step cascade, considering both arrays in their realistic geometries. The absolute efficiencies have been simulated for gamma energies from 700 to 2800 keV using four different double-photon emitters, namely, 60 Co, 46 Sc, 94 Nb and 24 Na. The efficiencies so obtained have been corrected for coincidence summing using the method proposed by Vidmar et al. . The simulations have also been carried out for the same energies assuming mono-energetic point sources, for comparison. Experimental measurements have also been carried out using calibrated point sources of 137 Cs and 60 Co. The simulated and the experimental results are found to be in good agreement. This demonstrates the reliability of the correction method for efficiency calibration of two large arrays in very different configurations.

  5. Efficiency calibration and coincidence summing correction for large arrays of NaI(Tl) detectors in soccer-ball and castle geometries

    Energy Technology Data Exchange (ETDEWEB)

    Anil Kumar, G., E-mail: anilg@tifr.res.i [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India); Mazumdar, I.; Gothe, D.A. [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)

    2009-11-21

    Efficiency calibration and coincidence summing correction have been performed for two large arrays of NaI(Tl) detectors in two different configurations. They are, a compact array of 32 conical detectors of pentagonal and hexagonal shapes in soccer-ball geometry and an array of 14 straight hexagonal NaI(Tl) detectors in castle geometry. Both of these arrays provide a large solid angle of detection, leading to considerable coincidence summing of gamma rays. The present work aims to understand the effect of coincidence summing of gamma rays while determining the energy dependence of efficiencies of these two arrays. We have carried out extensive GEANT4 simulations with radio-nuclides that decay with a two-step cascade, considering both arrays in their realistic geometries. The absolute efficiencies have been simulated for gamma energies from 700 to 2800 keV using four different double-photon emitters, namely, {sup 60}Co, {sup 46}Sc, {sup 94}Nb and {sup 24}Na. The efficiencies so obtained have been corrected for coincidence summing using the method proposed by Vidmar et al. . The simulations have also been carried out for the same energies assuming mono-energetic point sources, for comparison. Experimental measurements have also been carried out using calibrated point sources of {sup 137}Cs and {sup 60}Co. The simulated and the experimental results are found to be in good agreement. This demonstrates the reliability of the correction method for efficiency calibration of two large arrays in very different configurations.

  6. High spin gamma-ray coincidence spectroscopy with large detector arrays

    International Nuclear Information System (INIS)

    Bergstroem, M.H.

    1992-12-01

    In-beam γ-ray spectroscopy has been used to study rapidly rotating nuclei in the rare-earth region. The experiments were performed using the high-resolution multi detector arrays ESSA30 and TESSA3 at the Nuclear Structure Facility, Daresbury Laboratories in Great Britain and the NORDBALL at the Niels Bohr Tandem Accelerator at Risoe in Denmark. The studied nuclei were produced using heavy-ion induced fusion-evaporation reactions. New techniques for the analysis of γ-γ correlation spectra were developed. These involves viewing the two-dimensional γ-γ spectrum as well as projection in both energy axes, determination of centroids and volumes of peaks and full two-dimensional Gauss fits of an arbitrarily shaped area. The data acquisition system of the NORDBALL multi detector array is presented. In two of the studied nuclei ( 167 Lu and 163 Tm) the strongly shape driving πh 9/2 [541]1/2 - is studied. The shift to larger frequency of the neutron AB crossing in these decay sequences is not fully understood. The study of 171 Re revealed a second backbend of the [402]5/2 + band. The observed bandcrossings are interpreted using the CSM and three-band mixing calculations. The study of 171,172 W revealed five new bands and although these nuclei are expected to be stably deformed the small differences in the formation showed to be crucial in order to reproduce data well. (au)

  7. The EUROBALL array

    International Nuclear Information System (INIS)

    Rossi Alvarez, C.

    1998-01-01

    The quality of the multidetector array EUROBALL is described, with emphasis on the history and formal organization of the related European collaboration. The detector layout is presented together with the electronics and Data Acquisition capabilities. The status of the instrument, its performances and the main features of some recently developed ancillary detectors will also be described. The EUROBALL array is operational in Legnaro National Laboratory (Italy) since April 1997 and is expected to run up to November 1998. The array represents a significant improvement in detector efficiency and sensitivity with respect to the previous generation of multidetector arrays

  8. Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

    International Nuclear Information System (INIS)

    Bloomfield, P.

    1992-01-01

    The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

  9. Radiation damage studies on STAR250 CMOS sensor at 300 keV for electron microscopy

    International Nuclear Information System (INIS)

    Faruqi, A.R.; Henderson, R.; Holmes, J.

    2006-01-01

    There is a pressing need for better electronic detectors to replace film for recording high-resolution images using electron cryomicroscopy. Our previous work has shown that direct electron detection in CMOS sensors is promising in terms of resolution and efficiency at 120 keV [A.R. Faruqi, R. Henderson, M. Prydderch, R. Turchetta, P. Allport, A. Evans, Nucl. Instr. and Meth. 546 (2005) 170], but in addition, the detectors must not be damaged by the electron irradiation. We now present new measurements on the radiation tolerance of a 25 μm pitch CMOS active-pixel sensor, the STAR250, which was designed by FillFactory using radiation-hard technology for space applications. Our tests on the STAR250 aimed to establish the imaging performance at 300 keV following irradiation. The residual contrast, measured on shadow images of a 300 mesh grid, was >80% after corrections for increased dark current, following irradiation with up to 5x10 7 electrons/pixel (equivalent to 80,000 electron/μm 2 ). A CMOS sensor with this degree of radiation tolerance would survive a year of normal usage for low-dose electron cryomicroscopy, which is a very useful advance

  10. A CMOS 130nm Evaluation digitzer chip for silicon strips readout

    CERN Document Server

    Da Silva, W; Dhellot, M; Fougeron, D; Genat, J F; Hermel, R; Huppert, J f; Kapusta, F; Lebbolo, H; Pham, T H; Rossel, F; Savoy-navarro, A; Sefri, R; Vilalte

    2007-01-01

    A CMOS 130nm evaluation chip intended to read Silicon strip detectors at the ILC has been designed and successfully tested. Optimized for a detector capacitance of 10 pF, it includes four channels of charge integration, pulse shaping, a 16-deep analogue sampler triggered on input analogue sums, and parallel analogue to digital conversion. Tests results of the full chain are reported, demonstrating the behaviour and performance of the full sampling process and analogue to digital conversion. Each channel dissipates less than one milli-Watt static power.

  11. A CMOS integrated pulse mode alpha-particle counter for application in radon monitoring

    International Nuclear Information System (INIS)

    Ahmed, A.; Walkey, D.J.; Tarr, N.G.

    1997-01-01

    A custom integrated circuit for detecting alpha particles for application in the monitoring of radon has been designed and tested. The design uses the reverse-biased well to a substrate capacitance of a p-n junction in a conventional CMOS process as a sense capacitor for incident alpha particles. A simple CMOS inverter is used as an analog amplifier to detect the small potential change induced by an alpha-particle strike on the sense capacitor. The design was implemented in a 1.2-microm conventional CMOS process with a sense capacitor area of 110 microm 2 . Tests carried out under vacuum conditions using a calibrated 241 Am alpha-particle source showed an output voltage swing of ≥2.0 V for an alpha event. The detector is also shown to have good immunity to noise and high-quantum efficiency for alpha particles

  12. Development of multi-channel gated integrator and PXI-DAQ system for nuclear detector arrays

    International Nuclear Information System (INIS)

    Kong Jie; Su Hong; Chen Zhiqiang; Dong Chengfu; Qian Yi; Gao Shanshan; Zhou Chaoyang; Lu Wan; Ye Ruiping; Ma Junbing

    2010-01-01

    A multi-channel gated integrator and PXI based data acquisition system have been developed for nuclear detector arrays with hundreds of detector units. The multi-channel gated integrator can be controlled by a programmable GI controller. The PXI-DAQ system consists of NI PXI-1033 chassis with several PXI-DAQ cards. The system software has a user-friendly GUI which is written in C language using LabWindows/CVI under Windows XP operating system. The performance of the PXI-DAQ system is very reliable and capable of handling event rate up to 40 kHz.

  13. An automatic gain matching method for {gamma}-ray spectra obtained with a multi-detector array

    Energy Technology Data Exchange (ETDEWEB)

    Pattabiraman, N.S.; Chintalapudi, S.N.; Ghugre, S.S. E-mail: ssg@alpha.iuc.res.in

    2004-07-01

    The increasing size of data sets from large multi-detector arrays makes the traditional approach to the pre-evaluation of the data difficult and time consuming. The pre-sorting involves detection and correction of the observed on-line drifts followed by calibration of the raw data. A new method for automatic detection and correction of these instrumental drifts is presented. An application of this method to the data acquired using a multi-Clover array is discussed.

  14. An automatic gain matching method for γ-ray spectra obtained with a multi-detector array

    International Nuclear Information System (INIS)

    Pattabiraman, N.S.; Chintalapudi, S.N.; Ghugre, S.S.

    2004-01-01

    The increasing size of data sets from large multi-detector arrays makes the traditional approach to the pre-evaluation of the data difficult and time consuming. The pre-sorting involves detection and correction of the observed on-line drifts followed by calibration of the raw data. A new method for automatic detection and correction of these instrumental drifts is presented. An application of this method to the data acquired using a multi-Clover array is discussed

  15. Dosimetric performance and array assessment of plastic scintillation detectors for stereotactic radiosurgery quality assurance.

    Science.gov (United States)

    Gagnon, Jean-Christophe; Thériault, Dany; Guillot, Mathieu; Archambault, Louis; Beddar, Sam; Gingras, Luc; Beaulieu, Luc

    2012-01-01

    To compare the performance of plastic scintillation detectors (PSD) for quality assurance (QA) in stereotactic radiosurgery conditions to a microion-chamber (IC), Gafchromic EBT2 films, 60 008 shielded photon diode (SD) and unshielded diodes (UD), and assess a new 2D crosshair array prototype adapted to small field dosimetry. The PSD consists of a 1 mm diameter by 1 mm long scintillating fiber (BCF-60, Saint-Gobain, Inc.) coupled to a polymethyl-methacrylate optical fiber (Eska premier, Mitsubishi Rayon Co., Ltd., Tokyo, Japan). Output factors (S(c,p)) for apertures used in radiosurgery ranging from 4 to 40 mm in diameter have been measured. The PSD crosshair array (PSDCA) is a water equivalent device made up of 49 PSDs contained in a 1.63 cm radius area. Dose profiles measurements were taken for radiosurgery fields using the PSDCA and were compared to other dosimeters. Moreover, a typical stereotactic radiosurgery treatment using four noncoplanar arcs was delivered on a spherical phantom in which UD, IC, or PSD was placed. Using the Xknife planning system (Integra Radionics Burlington, MA), 15 Gy was prescribed at the isocenter, where each detector was positioned. Output Factors measured by the PSD have a mean difference of 1.3% with Gafchromic EBT2 when normalized to a 10 × 10 cm(2) field, and 1.0% when compared with UD measurements normalized to the 35 mm diameter cone. Dose profiles taken with the PSD crosshair array agreed with other single detectors dose profiles in spite of the presence of the 49 PSDs. Gamma values comparing 1D dose profiles obtained with PSD crosshair array with Gafchromic EBT2 and UD measured profiles shows 98.3% and 100.0%, respectively, of detector passing the gamma acceptance criteria of 0.3 mm and 2%. The dose measured by the PSD for a complete stereotactic radiosurgery treatment is comparable to the planned dose corrected for its SD-based S(c,p) within 1.4% and 0.7% for 5 and 35 mm diameter cone, respectively. Furthermore

  16. Dosimetric performance and array assessment of plastic scintillation detectors for stereotactic radiosurgery quality assurance

    Energy Technology Data Exchange (ETDEWEB)

    Gagnon, Jean-Christophe; Theriault, Dany; Guillot, Mathieu; Archambault, Louis; Beddar, Sam; Gingras, Luc; Beaulieu, Luc [Departement de Physique, de Genie Physique et d' Optique, Universite Laval, Quebec, Quebec G1K 7P4 (Canada) and Departement de Radio-Oncologie, Hotel-Dieu de Quebec, Centre Hospitalier Universitaire de Quebec, Quebec G1R 2J6 (Canada); Departement de Radio-Oncologie, Hotel-Dieu de Quebec, Centre Hospitalier Universitaire de Quebec, Quebec G1R 2J6 (Canada); Departement de Physique, de Genie Physique et d' Optique, Universite Laval, Quebec, Quebec G1K 7P4 (Canada) and Departement de Radio-Oncologie, Hotel-Dieu de Quebec, Centre Hospitalier Universitaire de Quebec, Quebec G1R 2J6 (Canada); Department of Radiation Physics, Unit 94, University of Texas M. D. Anderson Cancer Center, 1515 Holcombe Boulevard, Houston, Texas 77030 (United States); Departement de Physique, de Genie Physique et d' Optique, Universite Laval, Quebec, Quebec G1K 7P4 (Canada) and Departement de Radio-Oncologie, Hotel-Dieu de Quebec, Centre Hospitalier Universitaire de Quebec, Quebec G1R 2J6 (Canada)

    2012-01-15

    Purpose: To compare the performance of plastic scintillation detectors (PSD) for quality assurance (QA) in stereotactic radiosurgery conditions to a microion-chamber (IC), Gafchromic EBT2 films, 60 008 shielded photon diode (SD) and unshielded diodes (UD), and assess a new 2D crosshair array prototype adapted to small field dosimetry. Methods: The PSD consists of a 1 mm diameter by 1 mm long scintillating fiber (BCF-60, Saint-Gobain, Inc.) coupled to a polymethyl-methacrylate optical fiber (Eska premier, Mitsubishi Rayon Co., Ltd., Tokyo, Japan). Output factors (S{sub c,p}) for apertures used in radiosurgery ranging from 4 to 40 mm in diameter have been measured. The PSD crosshair array (PSDCA) is a water equivalent device made up of 49 PSDs contained in a 1.63 cm radius area. Dose profiles measurements were taken for radiosurgery fields using the PSDCA and were compared to other dosimeters. Moreover, a typical stereotactic radiosurgery treatment using four noncoplanar arcs was delivered on a spherical phantom in which UD, IC, or PSD was placed. Using the Xknife planning system (Integra Radionics Burlington, MA), 15 Gy was prescribed at the isocenter, where each detector was positioned. Results: Output Factors measured by the PSD have a mean difference of 1.3% with Gafchromic EBT2 when normalized to a 10 x 10 cm{sup 2} field, and 1.0% when compared with UD measurements normalized to the 35 mm diameter cone. Dose profiles taken with the PSD crosshair array agreed with other single detectors dose profiles in spite of the presence of the 49 PSDs. Gamma values comparing 1D dose profiles obtained with PSD crosshair array with Gafchromic EBT2 and UD measured profiles shows 98.3% and 100.0%, respectively, of detector passing the gamma acceptance criteria of 0.3 mm and 2%. The dose measured by the PSD for a complete stereotactic radiosurgery treatment is comparable to the planned dose corrected for its SD-based S{sub c,p} within 1.4% and 0.7% for 5 and 35 mm diameter cone

  17. Dosimetric performance and array assessment of plastic scintillation detectors for stereotactic radiosurgery quality assurance

    International Nuclear Information System (INIS)

    Gagnon, Jean-Christophe; Theriault, Dany; Guillot, Mathieu; Archambault, Louis; Beddar, Sam; Gingras, Luc; Beaulieu, Luc

    2012-01-01

    Purpose: To compare the performance of plastic scintillation detectors (PSD) for quality assurance (QA) in stereotactic radiosurgery conditions to a microion-chamber (IC), Gafchromic EBT2 films, 60 008 shielded photon diode (SD) and unshielded diodes (UD), and assess a new 2D crosshair array prototype adapted to small field dosimetry. Methods: The PSD consists of a 1 mm diameter by 1 mm long scintillating fiber (BCF-60, Saint-Gobain, Inc.) coupled to a polymethyl-methacrylate optical fiber (Eska premier, Mitsubishi Rayon Co., Ltd., Tokyo, Japan). Output factors (S c,p ) for apertures used in radiosurgery ranging from 4 to 40 mm in diameter have been measured. The PSD crosshair array (PSDCA) is a water equivalent device made up of 49 PSDs contained in a 1.63 cm radius area. Dose profiles measurements were taken for radiosurgery fields using the PSDCA and were compared to other dosimeters. Moreover, a typical stereotactic radiosurgery treatment using four noncoplanar arcs was delivered on a spherical phantom in which UD, IC, or PSD was placed. Using the Xknife planning system (Integra Radionics Burlington, MA), 15 Gy was prescribed at the isocenter, where each detector was positioned. Results: Output Factors measured by the PSD have a mean difference of 1.3% with Gafchromic EBT2 when normalized to a 10 x 10 cm 2 field, and 1.0% when compared with UD measurements normalized to the 35 mm diameter cone. Dose profiles taken with the PSD crosshair array agreed with other single detectors dose profiles in spite of the presence of the 49 PSDs. Gamma values comparing 1D dose profiles obtained with PSD crosshair array with Gafchromic EBT2 and UD measured profiles shows 98.3% and 100.0%, respectively, of detector passing the gamma acceptance criteria of 0.3 mm and 2%. The dose measured by the PSD for a complete stereotactic radiosurgery treatment is comparable to the planned dose corrected for its SD-based S c,p within 1.4% and 0.7% for 5 and 35 mm diameter cone, respectively

  18. Detector block based on arrays of 144 SiPMs and monolithic scintillators: A performance study

    International Nuclear Information System (INIS)

    González, A.J.; Conde, P.; Iborra, A.; Aguilar, A.; Bellido, P.; García-Olcina, R.; Hernández, L.; Moliner, L.; Rigla, J.P.; Rodríguez-Álvarez, M.J.; Sánchez, F.; Seimetz, M.; Soriano, A.; Torres, J.; Vidal, L.F.; Benlloch, J.M.

    2015-01-01

    We have developed a detector block composed by a monolithic LYSO scintillator coupled to a custom made 12×12 SiPMs array. The design is mainly focused to applications such as Positron Emission Tomography. The readout electronics is based on 3 identical and scalable Application Specific Integrated Circuits (ASIC). We have determined the main performance of the detector block namely spatial, energy, and time resolution but also the system capability to determine the photon depth of interaction, for different crystal surface treatments. Intrinsic detector spatial resolution values as good as 1.7 mm FWHM and energies of 15% for black painted crystals were measured

  19. Performance of a high-resolution depth-encoding PET detector module using linearly-graded SiPM arrays

    Science.gov (United States)

    Du, Junwei; Bai, Xiaowei; Gola, Alberto; Acerbi, Fabio; Ferri, Alessandro; Piemonte, Claudio; Yang, Yongfeng; Cherry, Simon R.

    2018-02-01

    The goal of this study was to exploit the excellent spatial resolution characteristics of a position-sensitive silicon photomultiplier (SiPM) and develop a high-resolution depth-of-interaction (DOI) encoding positron emission tomography (PET) detector module. The detector consists of a 30  ×  30 array of 0.445  ×  0.445  ×  20 mm3 polished LYSO crystals coupled to two 15.5  ×  15.5 mm2 linearly-graded SiPM (LG-SiPM) arrays at both ends. The flood histograms show that all the crystals in the LYSO array can be resolved. The energy resolution, the coincidence timing resolution and the DOI resolution were 21.8  ±  5.8%, 1.23  ±  0.10 ns and 3.8  ±  1.2 mm, respectively, at a temperature of -10 °C and a bias voltage of 35.0 V. The performance did not degrade significantly for event rates of up to 130 000 counts s-1. This detector represents an attractive option for small-bore PET scanner designs that simultaneously emphasize high spatial resolution and high detection efficiency, important, for example, in preclinical imaging of the rodent brain with neuroreceptor ligands.

  20. Digital pulse-timing technique for the neutron detector array NEDA

    Energy Technology Data Exchange (ETDEWEB)

    Modamio, V., E-mail: victor.modamio@lnl.infn.it [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, I-35020 Legnaro (Italy); Valiente-Dobón, J.J. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, I-35020 Legnaro (Italy); Jaworski, G. [Faculty of Physics, Warsaw University of Technology, 00-662 Warszawa (Poland); Heavy Ion Laboratory, University of Warsaw, 02-093 Warszawa (Poland); Hüyük, T. [Instituto de Física Corpuscular, CSIC-Universitat de València, E-46980 Valencia (Spain); Triossi, A. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, I-35020 Legnaro (Italy); Egea, J. [Instituto de Física Corpuscular, CSIC-Universitat de València, E-46980 Valencia (Spain); Department of Electronic Engineering, Universitat de València, E-46100 Burjassot (Spain); Di Nitto, A. [Johannes Gutenberg-Universität Mainz, D-55099 Mainz (Germany); Söderström, P.-A. [RIKEN Nishina Center, 2-1 Hirosawa, Wako-shi, 351-0198 Saitama (Japan); Agramunt Ros, J. [Instituto de Física Corpuscular, CSIC-Universitat de València, E-46980 Valencia (Spain); Angelis, G. de [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, I-35020 Legnaro (Italy); France, G. de [GANIL, CEA/DSAM and CNRS/IN2P3, F-14076 Caen (France); Erduran, M.N. [Faculty of Engineering and Natural Sciences, Istanbul Sabahattin Zaim University, 34303 Istanbul (Turkey); and others

    2015-03-01

    A new digital pulse-timing algorithm, to be used with the future neutron detector array NEDA, has been developed and tested. The time resolution of four 5 in. diameter photomultiplier tubes (XP4512, R4144, R11833-100, and ET9390-kb), coupled to a cylindrical 5 in. by 5 in. BC501A liquid scintillator detector was measured by employing digital sampling electronics and a constant fraction discriminator (CFD) algorithm. The zero crossing of the CFD algorithm was obtained with a cubic spline interpolation, which was continuous up to the second derivative. The performance of the algorithm was studied at sampling rates of 500 MS/s and 200 MS/s. The time resolution obtained with the digital electronics was compared to the values acquired with a standard analog CFD. The result of this comparison shows that the time resolution from the analog and the digital measurements at 500 MS/s and at 200 MS/s are within 15% for all the tested photomultiplier tubes.

  1. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter.

    Science.gov (United States)

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-03-03

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) deletedCMOS terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz.

  2. Backside illuminated CMOS-TDI line scan sensor for space applications

    Science.gov (United States)

    Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

    2018-05-01

    A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

  3. Design of a Dry Dilution Refrigerator for MMC Gamma Detector Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, Stephan [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Boyd, Stephen [Univ. of New Mexico, Albuquerque, NM (United States); Cantor, Robin

    2017-04-03

    The goal of this LCP is to develop an ultra-high resolution gamma detector based on magnetic microcalorimeters (MMCs) for accurate non-destructive analysis (NDA) of nuclear materials. For highest energy resolution, we will introduce erbium-doped silver (Ag:Er) as a novel sensor material to replace current Au:Er sensors. The detector sensitivity will be increased by developing arrays of 32 Ag:Er pixels read out by 16 SQUID preamplifiers. MMC detectors require operating temperatures of ~15 mK and thus the use of a dilution refrigerator, and the desire for user-friendly operation without cryogenic liquids requires that this refrigerator use pulse-tube pre-cooling to ~4 K. For long-term reliability, we intend to re-design the heat switch that is needed to apply the magnetizing current to the Ag:Er sensor and that used to fail in earlier designs after months of operation. A cryogenic Compton veto will be installed to reduce the spectral background of the MMC, especially at low energies where ultra-high energy resolution is most important. The goals for FY16 were 1) to purchase a liquid-cryogen-free dilution refrigerator and adapt it for MMC operation, and 2) to fabricate Ag:Er-based MMC γ-detectors with improved performance and optimize their response. This report discusses the design of the instruments, and progress in MMC detector fabrication. Details of the MMC fabrication have been discussed in an April 2016 report to DOE.

  4. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    International Nuclear Information System (INIS)

    Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.

    2016-01-01

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  5. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    Science.gov (United States)

    Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

    2016-09-01

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  6. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Affolder, A.; Buckland, M.; Meng, L. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I. [Department of Physics, Oxford University, Oxford (United Kingdom); and others

    2016-09-21

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  7. Signal encoding method for a time-of-flight PET detector using a silicon photomultiplier array

    Science.gov (United States)

    Kwon, Sun Il; Lee, Jae Sung

    2014-10-01

    The silicon photomultiplier (SiPM) is a promising photosensor for magnetic resonance (MR) compatible time-of-flight (TOF) positron emission tomography (PET) scanners. The compact size of the SiPM allows direct one-to-one coupling between the scintillation crystal and the photosensor, yielding better timing and energy resolutions than the light sharing methods that have to be used in photomultiplier tube (PMT) PET systems. However, the one-to-one coupling scheme requires a huge volume of readout and processing electronics if no electric signal multiplexing or encoding scheme is properly applied. In this paper, we develop an electric signal encoding scheme for SiPM array based TOF PET detector blocks with the aim of reducing the complexity and volume of the signal readout and processing electronics. In an M×N SiPM array, the output signal of each channel in the SiPM array is divided into two signal lines. These output lines are then tied together in row and column lines. The row and column signals are used to measure the energy and timing information (or vice versa) of each incident gamma-ray event, respectively. Each SiPM channel was directly coupled to a 3×3×20 mm3 LGSO crystal. The reference detector, which was used to measure timing, consisted of an R9800 PMT and a 4×4×10 mm3 LYSO crystal and had a single time resolution of ~200 ps (FWHM). Leading edge discriminators were used to determine coincident events. Dedicated front-end electronics were developed, and the timing and energy resolutions of SiPM arrays with different array sizes (4×4, 8×8, and 12×12) were compared. Breakdown voltage of each SiPM channel was measured using energy spectra within various bias voltages. Coincidence events were measured using a 22Na point source. The average coincidence time resolution of 4×4, 8×8, and 12×12 SiPM arrays were 316 ps, 320 ps, and 335 ps (FWHM), respectively. The energy resolution of 4×4, 8×8, and 12×12 SiPM arrays were 11.8%, 12.5%, and 12.8% (FWHM

  8. Design of fundamental building blocks for fast binary readout CMOS sensors used in high-energy physics experiments

    Energy Technology Data Exchange (ETDEWEB)

    Degerli, Yavuz [CEA Saclay, IRFU/SEDI, 91191 Gif-sur-Yvette Cedex (France)], E-mail: degerli@cea.fr

    2009-04-21

    In this paper, design details of key building blocks for fast binary readout CMOS monolithic active pixel sensors developed for charged particle detection are presented. Firstly, an all-NMOS pixel architecture with in-pixel amplification and reset noise suppression which allows fast readout is presented. This pixel achieves high charge-to-voltage conversion factors (CVF) using a few number of transistors inside the pixel. It uses a pre-amplifying stage close to the detector and a simple double sampling (DS) circuitry to store the reset level of the detector. The DS removes the offset mismatches of amplifiers and the reset noise of the detector. Offset mismatches of the source follower are also corrected by a second column-level DS stage. The second important building block of these sensors, a low-power auto-zeroed column-level discriminator, is also presented. These two blocks transform the charge of the impinging particle into binary data. Finally, some experimental results obtained on CMOS chips designed using these blocks are presented.

  9. A CMOS In-Pixel CTIA High Sensitivity Fluorescence Imager.

    Science.gov (United States)

    Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

    2011-10-01

    Traditionally, charge coupled device (CCD) based image sensors have held sway over the field of biomedical imaging. Complementary metal oxide semiconductor (CMOS) based imagers so far lack sensitivity leading to poor low-light imaging. Certain applications including our work on animal-mountable systems for imaging in awake and unrestrained rodents require the high sensitivity and image quality of CCDs and the low power consumption, flexibility and compactness of CMOS imagers. We present a 132×124 high sensitivity imager array with a 20.1 μm pixel pitch fabricated in a standard 0.5 μ CMOS process. The chip incorporates n-well/p-sub photodiodes, capacitive transimpedance amplifier (CTIA) based in-pixel amplification, pixel scanners and delta differencing circuits. The 5-transistor all-nMOS pixel interfaces with peripheral pMOS transistors for column-parallel CTIA. At 70 fps, the array has a minimum detectable signal of 4 nW/cm(2) at a wavelength of 450 nm while consuming 718 μA from a 3.3 V supply. Peak signal to noise ratio (SNR) was 44 dB at an incident intensity of 1 μW/cm(2). Implementing 4×4 binning allowed the frame rate to be increased to 675 fps. Alternately, sensitivity could be increased to detect about 0.8 nW/cm(2) while maintaining 70 fps. The chip was used to image single cell fluorescence at 28 fps with an average SNR of 32 dB. For comparison, a cooled CCD camera imaged the same cell at 20 fps with an average SNR of 33.2 dB under the same illumination while consuming over a watt.

  10. Development of a High Dynamic Range Pixel Array Detector for Synchrotrons and XFELs

    Science.gov (United States)

    Weiss, Joel Todd

    Advances in synchrotron radiation light source technology have opened new lines of inquiry in material science, biology, and everything in between. However, x-ray detector capabilities must advance in concert with light source technology to fully realize experimental possibilities. X-ray free electron lasers (XFELs) place particularly large demands on the capabilities of detectors, and developments towards diffraction-limited storage ring sources also necessitate detectors capable of measuring very high flux [1-3]. The detector described herein builds on the Mixed Mode Pixel Array Detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging, and the Adaptive Gain Integrating Pixel Detector (AGIPD) developed for the European XFEL by a collaboration between Deustsches Elektronen-Synchrotron (DESY), the Paul-Scherrer-Institute (PSI), the University of Hamburg, and the University of Bonn, led by Heinz Graafsma [4, 5]. The feasibility of combining adaptive gain with charge removal techniques to increase dynamic range in XFEL experiments is assessed by simulating XFEL scatter with a pulsed infrared laser. The strategy is incorporated into pixel prototypes which are evaluated with direct current injection to simulate very high incident x-ray flux. A fully functional 16x16 pixel hybrid integrating x-ray detector featuring several different pixel architectures based on the prototypes was developed. This dissertation describes its operation and characterization. To extend dynamic range, charge is removed from the integration node of the front-end amplifier without interrupting integration. The number of times this process occurs is recorded by a digital counter in the pixel. The parameter limiting full well is thereby shifted from the size of an integration capacitor to the depth of a digital counter. The result is similar to that achieved by counting pixel array detectors, but the integrators presented here are designed to tolerate a

  11. Time over threshold based multi-channel LuAG-APD PET detector

    International Nuclear Information System (INIS)

    Shimazoe, Kenji; Orita, Tadashi; Nakamura, Yasuaki; Takahashi, Hiroyuki

    2013-01-01

    To achieve efficient signal processing, several time-based positron emission tomography (PET) systems using a large number of granulated gamma-ray detectors have recently been proposed. In this work described here, a 144-channel Pr:LuAG avalanche photodiode (APD) PET detector that uses time over threshold (ToT) and pulse train methods was designed and fabricated. The detector is composed of 12×12 Pr:LuAG crystals, each of which produces a 2 mm×2 mm×10 mm pixel individually coupled to a 12×12 APD array, which in turn is connected pixel-by-pixel with one channel of a time over threshold based application-specific integrated circuit (ToT-ASIC) that was designed and fabricated using a 0.25 μm 3.3 V Taiwan Semiconductor Company complementary metal oxide semiconductor (TSMC CMOS) process. The ToT outputs are connected through a field-programmable gate array (FPGA) to a data acquisition (DAQ) system. Three front-end ASIC boards—each incorporating a ToT-ASIC chip, threshold control digital-to-analog converters (DACs), and connectors, and dissipating power at about 230 mW per board—are used to read from the 144-channel LuAG-APD detector. All three boards are connected through an FPGA board that is programmed to calibrate the individual thresholds of the ToT circuits to allow digital multiplexing to form an integrated PET module with a measured timing resolution of 4.2 ns. Images transmitted by this PET system can be successfully acquired through collimation masks. As a further implementation of this technology, an animal PET system consisting of eight gamma pixel modules forming a ring is planned

  12. A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System.

    Science.gov (United States)

    Pérez-Bailón, Jorge; Márquez, Alejandro; Calvo, Belén; Medrano, Nicolás

    2018-05-02

    This paper presents a fully integrated 0.18 μm CMOS Low-Dropout (LDO) Voltage Regulator specifically designed to meet the stringent requirements of a battery-operated impedance spectrometry multichannel CMOS micro-instrument. The proposed LDO provides a regulated 1.8 V voltage from a 3.6 V to 1.94 V battery voltage over a −40 °C to 100 °C temperature range, with a compact topology (sensors.

  13. Research-grade CMOS image sensors for demanding space applications

    Science.gov (United States)

    Saint-Pé, Olivier; Tulet, Michel; Davancens, Robert; Larnaudie, Franck; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Belliot, Pierre

    2017-11-01

    Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle...) and Universe observation (space telescope focal planes, guiding sensors...). This market has been dominated by CCD technology for long. Since the mid- 90s, CMOS Image Sensors (CIS) have been competing with CCDs for more and more consumer domains (webcams, cell phones, digital cameras...). Featuring significant advantages over CCD sensors for space applications (lower power consumption, smaller system size, better radiations behaviour...), CMOS technology is also expanding in this field, justifying specific R&D and development programs funded by national and European space agencies (mainly CNES, DGA, and ESA). All along the 90s and thanks to their increasingly improving performances, CIS have started to be successfully used for more and more demanding applications, from vision and control functions requiring low-level performances to guidance applications requiring medium-level performances. Recent technology improvements have made possible the manufacturing of research-grade CIS that are able to compete with CCDs in the high-performances arena. After an introduction outlining the growing interest of optical instruments designers for CMOS image sensors, this talk will present the existing and foreseen ways to reach high-level electro-optics performances for CIS. The developments of CIS prototypes built using an imaging CMOS process and of devices based on improved designs will be presented.

  14. Nanosecond-laser induced crosstalk of CMOS image sensor

    Science.gov (United States)

    Zhu, Rongzhen; Wang, Yanbin; Chen, Qianrong; Zhou, Xuanfeng; Ren, Guangsen; Cui, Longfei; Li, Hua; Hao, Daoliang

    2018-02-01

    The CMOS Image Sensor (CIS) is photoelectricity image device which focused the photosensitive array, amplifier, A/D transfer, storage, DSP, computer interface circuit on the same silicon substrate[1]. It has low power consumption, high integration,low cost etc. With large scale integrated circuit technology progress, the noise suppression level of CIS is enhanced unceasingly, and its image quality is getting better and better. It has been in the security monitoring, biometrice, detection and imaging and even military reconnaissance and other field is widely used. CIS is easily disturbed and damaged while it is irradiated by laser. It is of great significance to study the effect of laser irradiation on optoelectronic countermeasure and device for the laser strengthening resistance is of great significance. There are some researchers have studied the laser induced disturbed and damaged of CIS. They focused on the saturation, supersaturated effects, and they observed different effects as for unsaturation, saturation, supersaturated, allsaturated and pixel flip etc. This paper research 1064nm laser interference effect in a typical before type CMOS, and observring the saturated crosstalk and half the crosstalk line. This paper extracted from cmos devices working principle and signal detection methods such as the Angle of the formation mechanism of the crosstalk line phenomenon are analyzed.

  15. Three-dimensional optoacoustic tomography using a conventional ultrasound linear detector array: whole-body tomographic system for small animals.

    Science.gov (United States)

    Gateau, Jerome; Caballero, Miguel Angel Araque; Dima, Alexander; Ntziachristos, Vasilis

    2013-01-01

    Optoacoustic imaging relies on the detection of ultrasonic waves induced by laser pulse excitations to map optical absorption in biological tissue. A tomographic geometry employing a conventional ultrasound linear detector array for volumetric optoacoustic imaging is reported. The geometry is based on a translate-rotate scanning motion of the detector array, and capitalizes on the geometrical characteristics of the transducer assembly to provide a large solid angular detection aperture. A system for three-dimensional whole-body optoacoustic tomography of small animals is implemented. The detection geometry was tested using a 128-element linear array (5.0∕7.0 MHz, Acuson L7, Siemens), moved by steps with a rotation∕translation stage assembly. Translation and rotation range of 13.5 mm and 180°, respectively, were implemented. Optoacoustic emissions were induced in tissue-mimicking phantoms and ex vivo mice using a pulsed laser operating in the near-IR spectral range at 760 nm. Volumetric images were formed using a filtered backprojection algorithm. The resolution of the optoacoustic tomography system was measured to be better than 130 μm in-plane and 330 μm in elevation (full width half maximum), and to be homogenous along a 15 mm diameter cross section due to the translate-rotate scanning geometry. Whole-body volumetric optoacoustic images of mice were performed ex vivo, and imaged organs and blood vessels through the intact abdominal and head regions were correlated to the mouse anatomy. Overall, the feasibility of three-dimensional and high-resolution whole-body optoacoustic imaging of small animal using a conventional linear array was demonstrated. Furthermore, the scanning geometry may be used for other linear arrays and is therefore expected to be of great interest for optoacoustic tomography at macroscopic and mesoscopic scale. Specifically, conventional detector arrays with higher central frequencies may be investigated.

  16. Performance study of monochromatic synchrotron X-ray computed tomography using a linear array detector

    Energy Technology Data Exchange (ETDEWEB)

    Kazama, Masahiro; Takeda, Tohoru; Itai, Yuji [Tsukuba Univ., Ibaraki (Japan). Inst. of Clinical Medicine; Akiba, Masahiro; Yuasa, Tetsuya; Hyodo, Kazuyuki; Ando, Masami; Akatsuka, Takao

    1997-09-01

    Monochromatic x-ray computed tomography (CT) using synchrotron radiation (SR) is being developed for detection of non-radioactive contrast materials at low concentration for application in clinical diagnosis. A new SR-CT system with improved contrast resolution, was constructed using a linear array detector which provides wide dynamic ranges and a double monochromator. The performance of this system was evaluated in a phantom and a rat model of brain ischemia. This system consists of a silicon (111) double crystal monochromator, an x-ray shutter, an ionization chamber, x-ray slits, a scanning table for the target organ, and an x-ray linear array detector. The research was carried out at the BLNE-5A bending magnet beam line of the Tristan Accumulation Ring in KEK, Japan. In this experiment, the reconstructed image of the spatial-resolution phantom clearly showed the 1 mm holes. At 1 mm slice thickness, the above K-edge image of the phantom showed contrast resolution at the concentration of 200 {mu}g/ml iodine-based contrast materials whereas the K-edge energy subtraction image showed contrast resolution at the concentration of 500 {mu}g/ml contrast materials. The cerebral arteries filled with iodine microspheres were clearly revealed, and the ischemic regions at the right temporal lobe and frontal lobe were depicted as non-vascular regions. The measured minimal detectable concentration of iodine on the above K-edge image is about 6 times higher than the expected value of 35.3 {mu}g/ml because of the high dark current of this detector. Thus, the use of a CCD detector which is cooled by liquid nitrogen to improve the dynamic range of the detector, is being under construction. (author)

  17. Application of Faraday cup array detector in measurement of electron-beam distribution homogeneity

    International Nuclear Information System (INIS)

    Xu Zhiguo; Wang Jinchuan; Xiao Guoqing; Guo Zhongyan; Wu Lijie; Mao Ruishi; Zhang Li

    2005-01-01

    It is described that a kind of Faraday cup array detector, which consists of Faraday cup, suppressor electrode insulation PCB board, Base etc. The homogeneity of electron-beam distribution is measured and the absorbed dose for the irradiated sample is calculated. The results above provide the important parameters for the irradiation experiment and the improvement for the quality of electron beam. (authors)

  18. Gamma-ray multiplicity measurement of the spontaneous fission decay of 252Cf in a segmented HPGe/BGO detector array

    Energy Technology Data Exchange (ETDEWEB)

    Bleuel, D L; Bernstein, L A; Burke, J T; Gibelin, J; Heffner, M D; Mintz, J; Norman, E B; Phair, L; Scielzo, N D; Sheets, S A; Snyderman, N J; Stoyer, M A; Wiedeking, M

    2008-04-23

    Coincident {gamma} rays from a {sup 252}Cf source were measured using an array of six segmented high-purity germanium (HPGe) Clover detectors each enclosed by 16 bismuth-germanate (BGO) detectors. The detectors were arranged in a cubic pattern around a 1 {micro}Ci {sup 252}Cf source to cover a large solid angle for {gamma}-ray measurement with a reasonable reconstruction of the multiplicity. Neutron multiplicity was determined in certain cases by identifying the prompt {gamma} rays from individual fission fragment pairs. Multiplicity distributions from previous experiments and theoretical models were convolved with the response function of the array and compared to the present results. These results suggest a {gamma}-ray multiplicity spectrum broader than previous measurements and models, and provide no evidence of correlation with neutron multiplicity.

  19. Irradiation of the CLARO-CMOS chip, a fast ASIC for single-photon counting

    International Nuclear Information System (INIS)

    Andreotti, M.; Baldini, W.; Calabrese, R.; Carniti, P.; Cassina, L.; Cotta Ramusino, A.; Fiorini, M.; Giachero, A.; Gotti, C.; Luppi, E.; Maino, M.; Malaguti, R.; Pessina, G.; Tomassetti, L.

    2015-01-01

    The CLARO-CMOS is a prototype ASIC that allows fast photon counting with low power consumption, built in AMS 0.35 μm CMOS technology. It is intended to be used as a front-end readout for the upgraded LHCb RICH detectors. In this environment, assuming 10 years of operation at the nominal luminosity expected after the upgrade, the ASIC must withstand a total fluence of about 6×10 12 1 MeV n eq /cm 2 and a total ionising dose of 400 krad. Long term stability of the electronics front-end is essential and the effects of radiation damage on the CLARO-CMOS performance must be carefully studied. This paper describes results of multi-step irradiation tests with protons up to the dose of ~8 Mrad, including measurement of single event effects during irradiation and chip performance evaluation before and after each irradiation step

  20. Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

    CERN Document Server

    Ristic, Branislav

    2016-09-21

    Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement amplifier and discriminator stages directly in insulating deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150V leading to a depletion depth of several 10um. Prototype sensors in the ams H18 180nm and H35 350nm HV-CMOS processes have been manufactured, acting as a potential drop-in replacement for the current ATLAS Pixel sensors, thus leaving higher level processing such as trigger handling to dedicated read-out chips. Sensors were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiation with X-rays and protons revealed a tolerance to ionizing doses o...

  1. A high-spatial-resolution three-dimensional detector array for 30-200 keV X-rays based on structured scintillators

    DEFF Research Database (Denmark)

    Olsen, Ulrik Lund; Schmidt, Søren; Poulsen, Henning Friis

    2008-01-01

    A three-dimensional X-ray detector for imaging 30-200 keV photons is described. It comprises a set of semi-transparent structured scintillators, where each scintillator is a regular array of waveguides in silicon, and with pores filled with CsI. The performance of the detector is described...

  2. High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

    Science.gov (United States)

    Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

    2016-03-01

    A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

  3. Improved detection limits for electrospray ionization on a magnetic sector mass spectrometer by using an array detector.

    Science.gov (United States)

    Cody, R B; Tamura, J; Finch, J W; Musselman, B D

    1994-03-01

    Array detection was compared with point detection for solutions of hen egg-white lysozyme, equine myoglobin, and ubiquitin analyzed by electrospray ionization with a magnetic sector mass spectrometer. The detection limits for samples analyzed by using the array detector system were at least 10 times lower than could be achieved by using a point detector on the same mass spectrometer. The minimum detectable quantity of protein corresponded to a signal-to-background ratio of approximately 2∶1 for a 500 amol/μL solution of hen egg-white lysozyme. However, the ultimate practical sample concentrations appeared to be in the 10-100 fmol/μL range for the analysis of dilute solutions of relatively pure proteins or simple mixtures.

  4. Prospects for charge sensitive amplifiers in scaled CMOS

    Science.gov (United States)

    O'Connor, Paul; De Geronimo, Gianluigi

    2002-03-01

    Due to its low cost and flexibility for custom design, monolithic CMOS technology is being increasingly employed in charge preamplifiers across a broad range of applications, including both scientific research and commercial products. The associated detectors have capacitances ranging from a few tens of fF to several hundred pF. Applications call for pulse shaping from tens of ns to tens of μs, and constrain the available power per channel from tens of μW to tens of mW. At the same time a new technology generation, with changed device parameters, appears every 2 years or so. The optimum design of the front-end circuitry is examined taking into account submicron device characteristics, weak inversion operation, the reset system, and power supply scaling. Experimental results from recent prototypes will be presented. We will also discuss the evolution of preamplifier topologies and anticipated performance limits as CMOS technology scales down to the 0.1 μm/1.0 V generation in 2006.

  5. Prospects for charge sensitive amplifiers in scaled CMOS

    International Nuclear Information System (INIS)

    O'Connor, Paul; De Geronimo, Gianluigi

    2002-01-01

    Due to its low cost and flexibility for custom design, monolithic CMOS technology is being increasingly employed in charge preamplifiers across a broad range of applications, including both scientific research and commercial products. The associated detectors have capacitances ranging from a few tens of fF to several hundred pF. Applications call for pulse shaping from tens of ns to tens of μs, and constrain the available power per channel from tens of μW to tens of mW. At the same time a new technology generation, with changed device parameters, appears every 2 years or so. The optimum design of the front-end circuitry is examined taking into account submicron device characteristics, weak inversion operation, the reset system, and power supply scaling. Experimental results from recent prototypes will be presented. We will also discuss the evolution of preamplifier topologies and anticipated performance limits as CMOS technology scales down to the 0.1 μm/1.0 V generation in 2006

  6. Characteristics of NaI detector in positron imaging device HEADTOME employing circular ring array

    International Nuclear Information System (INIS)

    Miura, Shuichi; Kanno, Iwao; Aizawa, Yasuo; Murakami, Matsutaro; Uemura, Kazuo

    1984-01-01

    In positron emission computed tomographs employing circular ring arrays of detectors, the performance of the imaging device has been specified ultimately by the characteristics of the detector. The responses of NaI detector were studied when detecting positron annihilation photon (511 keV). The study was mainly by using the NaI detector used in hybrid emission computed tomography (CT) ''HEADTOME'' we had developed. A series of measurements were carried out positioning two detectors with 40 cm distance and scanning 22 Na point source in water. Both detectors was inclined from 0 0 through 30 0 to change incident angle of positron annihilation toward crystal face. Energy window was set from 100 to 700 keV. The results were presented as follows; 1 Shortening the crystal length from 7 to 5 cm made sensitivity decrease about 10% and resolution deteriorate about 1 mm (FWHM). 2 As the results of varying the width of the crystal, 20 mm width was optimal at any incident angle. 3 The lead septum between the detectors was the thickness of 4 mm enough to reject multiple detector interactions (crosstalk). 4 Beam mask which was made of lead in order to improve spatial resolution and placed on crystal face worked effectively for incident angles from 0 0 to 15 0 but degraded uniformity of spatial resolution from 0 0 to through 30 0 . (author)

  7. Development of CMOS Monolithic Active Pixel Sensors for the ALICE-ITS Outer Barrel and for the CBM-MVD

    CERN Document Server

    Deveaux, Michael

    2015-01-01

    After more than a decade of R&D;, CMOS Monolithic Active Pixel Sensors (MAPS or CPS) have proven to offer concrete answers to the demanding requirements of subatomic physics experi- ments. Their main advantages result from their low material budget, their very high granularity and their integrated signal processing circuitry, which allows coping with high particle rates. Moreover, they offer a valuable radiation tolerance and may be produced at low cost. Sensors of the MIMOSA series have offered an opportunity for nuclear and particle physics exper- iments to address with improved sensitivity physics studies requiring an accurate reconstruction of short living and soft particles. One of their major applications is the STAR-PXL detector, which is the first vertex detector based on MAPS. While this experiment is successfully taking data since two years, it was found that the 0.35 m CMOS technology used for this purpose is not suited for upcoming applications like the CBM micro-vertex detector (MVD) and the ...

  8. A silicon strip detector array for energy verification and quality assurance in heavy ion therapy.

    Science.gov (United States)

    Debrot, Emily; Newall, Matthew; Guatelli, Susanna; Petasecca, Marco; Matsufuji, Naruhiro; Rosenfeld, Anatoly B

    2018-02-01

    The measurement of depth dose profiles for range and energy verification of heavy ion beams is an important aspect of quality assurance procedures for heavy ion therapy facilities. The steep dose gradients in the Bragg peak region of these profiles require the use of detectors with high spatial resolution. The aim of this work is to characterize a one dimensional monolithic silicon detector array called the "serial Dose Magnifying Glass" (sDMG) as an independent ion beam energy and range verification system used for quality assurance conducted for ion beams used in heavy ion therapy. The sDMG detector consists of two linear arrays of 128 silicon sensitive volumes each with an effective size of 2mm × 50μm × 100μm fabricated on a p-type substrate at a pitch of 200 μm along a single axis of detection. The detector was characterized for beam energy and range verification by measuring the response of the detector when irradiated with a 290 MeV/u 12 C ion broad beam incident along the single axis of the detector embedded in a PMMA phantom. The energy of the 12 C ion beam incident on the detector and the residual energy of an ion beam incident on the phantom was determined from the measured Bragg peak position in the sDMG. Ad hoc Monte Carlo simulations of the experimental setup were also performed to give further insight into the detector response. The relative response profiles along the single axis measured with the sDMG detector were found to have good agreement between experiment and simulation with the position of the Bragg peak determined to fall within 0.2 mm or 1.1% of the range in the detector for the two cases. The energy of the beam incident on the detector was found to vary less than 1% between experiment and simulation. The beam energy incident on the phantom was determined to be (280.9 ± 0.8) MeV/u from the experimental and (280.9 ± 0.2) MeV/u from the simulated profiles. These values coincide with the expected energy of 281 MeV/u. The sDMG detector

  9. Overview of CMOS process and design options for image sensor dedicated to space applications

    Science.gov (United States)

    Martin-Gonthier, P.; Magnan, P.; Corbiere, F.

    2005-10-01

    With the growth of huge volume markets (mobile phones, digital cameras...) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain. Space applications can of course benefit from these improvements. To illustrate this evolution, this paper reports results from three technologies that have been evaluated with test vehicles composed of several sub arrays designed with some space applications as target. These three technologies are CMOS standard, improved and sensor optimized process in 0.35μm generation. Measurements are focussed on quantum efficiency, dark current, conversion gain and noise. Other measurements such as Modulation Transfer Function (MTF) and crosstalk are depicted in [1]. A comparison between results has been done and three categories of CMOS process for image sensors have been listed. Radiation tolerance has been also studied for the CMOS improved process in the way of hardening the imager by design. Results at 4, 15, 25 and 50 krad prove a good ionizing dose radiation tolerance applying specific techniques.

  10. Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays

    Science.gov (United States)

    Forsberg, Fredrik; Roxhed, Niclas; Fischer, Andreas C.; Samel, Björn; Ericsson, Per; Hoivik, Nils; Lapadatu, Adriana; Bring, Martin; Kittilsland, Gjermund; Stemme, Göran; Niklaus, Frank

    2013-09-01

    Imaging in the long wavelength infrared (LWIR) range from 8 to 14 μm is an extremely useful tool for non-contact measurement and imaging of temperature in many industrial, automotive and security applications. However, the cost of the infrared (IR) imaging components has to be significantly reduced to make IR imaging a viable technology for many cost-sensitive applications. This paper demonstrates new and improved fabrication and packaging technologies for next-generation IR imaging detectors based on uncooled IR bolometer focal plane arrays. The proposed technologies include very large scale heterogeneous integration for combining high-performance, SiGe quantum-well bolometers with electronic integrated read-out circuits and CMOS compatible wafer-level vacuum packing. The fabrication and characterization of bolometers with a pitch of 25 μm × 25 μm that are arranged on read-out-wafers in arrays with 320 × 240 pixels are presented. The bolometers contain a multi-layer quantum well SiGe thermistor with a temperature coefficient of resistance of -3.0%/K. The proposed CMOS compatible wafer-level vacuum packaging technology uses Cu-Sn solid-liquid interdiffusion (SLID) bonding. The presented technologies are suitable for implementation in cost-efficient fabless business models with the potential to bring about the cost reduction needed to enable low-cost IR imaging products for industrial, security and automotive applications.

  11. Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy

    Science.gov (United States)

    Finger, G.; Baker, I.; Downing, M.; Alvarez, D.; Ives, D.; Mehrgan, L.; Meyer, M.; Stegmeier, J.; Weller, H. J.

    2017-11-01

    Large format near infrared HgCdTe 2Kx2K and 4Kx4K MBE arrays have reached a level of maturity which meets most of the specifications required for near infrared (NIR) astronomy. The only remaining problem is the persistence effect which is device specific and not yet fully under control. For ground based multi-object spectroscopy on 40 meter class telescopes larger pixels would be advantageous. For high speed near infrared fringe tracking and wavefront sensing the only way to overcome the CMOS noise barrier is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. A readout chip for a 320x256 pixel HgCdTe eAPD array will be presented which has 32 parallel video outputs being arranged in such a way that the full multiplex advantage is also available for small sub-windows. In combination with the high APD gain this allows reducing the readout noise to the subelectron level by applying nondestructive readout schemes with subpixel sampling. Arrays grown by MOVPE achieve subelectron readout noise and operate with superb cosmetic quality at high APD gain. Efforts are made to reduce the dark current of those arrays to make this technology also available for large format focal planes of NIR instruments offering noise free detectors for deep exposures. The dark current of the latest MOVPE eAPD arrays is already at a level adequate for noiseless broad and narrow band imaging in scientific instruments.

  12. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, A. E., E-mail: bolotnik@bnl.gov; Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Mahler, G.; Maritato, M.; Roy, U.; Salwen, C.; Vernon, E.; Yang, G.; James, R. B. [Brookhaven National Laboratory, Upton, New York 11793 (United States); Hodges, D. [University of Texas at El Paso, El Paso, Texas 79968 (United States); Lee, W. [Korea University, Seoul 136-855 (Korea, Republic of); Petryk, M. [SUNY Binghamton, Vestal, New York 13902 (United States)

    2015-07-15

    We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm{sup 3} detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

  13. Tracking Detectors in the STAR Experiment at RHIC

    Science.gov (United States)

    Wieman, Howard

    2015-04-01

    The STAR experiment at RHIC is designed to measure and identify the thousands of particles produced in 200 Gev/nucleon Au on Au collisions. This talk will focus on the design and construction of two of the main tracking detectors in the experiment, the TPC and the Heavy Flavor Tracker (HFT) pixel detector. The TPC is a solenoidal gas filled detector 4 meters in diameter and 4.2 meters long. It provides precise, continuous tracking and rate of energy loss in the gas (dE/dx) for particles at + - 1 units of pseudo rapidity. The tracking in a half Tesla magnetic field measures momentum and dE/dX provides particle ID. To detect short lived particles tracking close to the point of interaction is required. The HFT pixel detector is a two-layered, high resolution vertex detector located at a few centimeters radius from the collision point. It determines origins of the tracks to a few tens of microns for the purpose of extracting displaced vertices, allowing the identification of D mesons and other short-lived particles. The HFT pixel detector uses detector chips developed by the IPHC group at Strasbourg that are based on standard IC Complementary Metal-Oxide-Semiconductor (CMOS) technology. This is the first time that CMOS pixel chips have been incorporated in a collider application.

  14. Minority n out of m coincidence circuits for time-differential experiments with multi-detector arrays

    International Nuclear Information System (INIS)

    Braunsfurth, J.; Geske, K.

    1976-01-01

    Two n out of m minority coincidence circuits (n<=8, 15<=m<=31), employed for time-differential experiments are presented. Specifications like obtainable prompt coincidence resolution time, expandability to higher detector numbers m, implementation variants and their consequences, and some application modes are discussed. Hardware expenses on electronics for m-detector arrays usually rise nearly proportional to m factorial. In the coincidence system proposed here, the rise in hardware expenses can be reduced to slightly more than proportional to m, without sacrifice in experimental quality and flexibility. (Auth.)

  15. Time-resolved optical spectrometer based on a monolithic array of high-precision TDCs and SPADs

    Science.gov (United States)

    Tamborini, Davide; Markovic, Bojan; Di Sieno, Laura; Contini, Davide; Bassi, Andrea; Tisa, Simone; Tosi, Alberto; Zappa, Franco

    2013-12-01

    We present a compact time-resolved spectrometer suitable for optical spectroscopy from 400 nm to 1 μm wavelengths. The detector consists of a monolithic array of 16 high-precision Time-to-Digital Converters (TDC) and Single-Photon Avalanche Diodes (SPAD). The instrument has 10 ps resolution and reaches 70 ps (FWHM) timing precision over a 160 ns full-scale range with a Differential Non-Linearity (DNL) better than 1.5 % LSB. The core of the spectrometer is the application-specific integrated chip composed of 16 pixels with 250 μm pitch, containing a 20 μm diameter SPAD and an independent TDC each, fabricated in a 0.35 μm CMOS technology. In front of this array a monochromator is used to focus different wavelengths into different pixels. The spectrometer has been used for fluorescence lifetime spectroscopy: 5 nm spectral resolution over an 80 nm bandwidth is achieved. Lifetime spectroscopy of Nile blue is demonstrated.

  16. A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

    Science.gov (United States)

    Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

    2014-01-01

    This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

  17. SOLID2: an antibody array-based life-detector instrument in a Mars Drilling Simulation Experiment (MARTE).

    Science.gov (United States)

    Parro, Víctor; Fernández-Calvo, Patricia; Rodríguez Manfredi, José A; Moreno-Paz, Mercedes; Rivas, Luis A; García-Villadangos, Miriam; Bonaccorsi, Rosalba; González-Pastor, José Eduardo; Prieto-Ballesteros, Olga; Schuerger, Andrew C; Davidson, Mark; Gómez-Elvira, Javier; Stoker, Carol R

    2008-10-01

    A field prototype of an antibody array-based life-detector instrument, Signs Of LIfe Detector (SOLID2), has been tested in a Mars drilling mission simulation called MARTE (Mars Astrobiology Research and Technology Experiment). As one of the analytical instruments on the MARTE robotic drilling rig, SOLID2 performed automatic sample processing and analysis of ground core samples (0.5 g) with protein microarrays that contained 157 different antibodies. Core samples from different depths (down to 5.5 m) were analyzed, and positive reactions were obtained in antibodies raised against the Gram-negative bacterium Leptospirillum ferrooxidans, a species of the genus Acidithiobacillus (both common microorganisms in the Río Tinto area), and extracts from biofilms and other natural samples from the Río Tinto area. These positive reactions were absent when the samples were previously subjected to a high-temperature treatment, which indicates the biological origin and structural dependency of the antibody-antigen reactions. We conclude that an antibody array-based life-detector instrument like SOLID2 can detect complex biological material, and it should be considered as a potential analytical instrument for future planetary missions that search for life.

  18. Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

    International Nuclear Information System (INIS)

    Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

    2014-01-01

    The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

  19. A low-power and small-area column-level ADC for high frame-rate CMOS pixel sensor

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L., E-mail: liang.zhang@iphc.cnrs.fr [School of Physics, Key Laboratory of Particle Physics and Particle Irradiation, Shandong University, 250100 Jinan (China); Institut Pluridisciplinaire Hubert Curien, University of Strasbourg, CNRS/IN2P3/UDS, 23 rue du loess, BP 28, 67037 Strasbourg (France); Morel, F.; Hu-Guo, C.; Hu, Y. [Institut Pluridisciplinaire Hubert Curien, University of Strasbourg, CNRS/IN2P3/UDS, 23 rue du loess, BP 28, 67037 Strasbourg (France)

    2014-07-01

    CMOS pixel sensors (CPS) have demonstrated performances meeting the specifications of the International Linear Collider (ILC) vertex detector (VTX). This paper presents a low-power and small-area 4-bit column-level analog-to-digital converter (ADC) for CMOS pixel sensors. The ADC employs a self-timed trigger and completes the conversion by performing a multi-bit/step approximation. As in the outer layers of the ILC vertex detector hit density is of the order of a few per thousand, in order to reduce power consumption, the ADC is designed to work in two modes: active mode and idle mode. The ADC is fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. It is implemented with 48 columns in a sensor prototype. Each column ADC covers an area of 35 ×545 μm{sup 2}. The measured temporal noise and Fixed Pattern Noise (FPN) are 0.96 mV and 0.40 mV, respectively. The power consumption, for a 3 V supply and 6.25 MS/s sampling rate, is 486 μW during idle time, which is by far the most frequently employed one. This value rises to 714 μW in the case of the active mode. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.49/−0.28 LSB and 0.29/−0.20 LSB, respectively. - Highlights: • CMOS sensor integrated with column-level ADC is proposed for ILC VTX outer layers. • A low-power and small-area column-level ADC for high frame-rate CPS is presented. • The test results demonstrate the power and area efficiency. • The architecture is suitable for the outer layer CMOS sensors.

  20. A low-power and small-area column-level ADC for high frame-rate CMOS pixel sensor

    International Nuclear Information System (INIS)

    Zhang, L.; Morel, F.; Hu-Guo, C.; Hu, Y.

    2014-01-01

    CMOS pixel sensors (CPS) have demonstrated performances meeting the specifications of the International Linear Collider (ILC) vertex detector (VTX). This paper presents a low-power and small-area 4-bit column-level analog-to-digital converter (ADC) for CMOS pixel sensors. The ADC employs a self-timed trigger and completes the conversion by performing a multi-bit/step approximation. As in the outer layers of the ILC vertex detector hit density is of the order of a few per thousand, in order to reduce power consumption, the ADC is designed to work in two modes: active mode and idle mode. The ADC is fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. It is implemented with 48 columns in a sensor prototype. Each column ADC covers an area of 35 ×545 μm 2 . The measured temporal noise and Fixed Pattern Noise (FPN) are 0.96 mV and 0.40 mV, respectively. The power consumption, for a 3 V supply and 6.25 MS/s sampling rate, is 486 μW during idle time, which is by far the most frequently employed one. This value rises to 714 μW in the case of the active mode. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.49/−0.28 LSB and 0.29/−0.20 LSB, respectively. - Highlights: • CMOS sensor integrated with column-level ADC is proposed for ILC VTX outer layers. • A low-power and small-area column-level ADC for high frame-rate CPS is presented. • The test results demonstrate the power and area efficiency. • The architecture is suitable for the outer layer CMOS sensors