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Sample records for cmos current mirrors

  1. A CURRENT MIRROR BASED TWO STAGE CMOS CASCODE OP-AMP FOR HIGH FREQUENCY APPLICATION

    Directory of Open Access Journals (Sweden)

    RAMKRISHNA KUNDU

    2017-03-01

    Full Text Available This paper presents a low power, high slew rate, high gain, ultra wide band two stage CMOS cascode operational amplifier for radio frequency application. Current mirror based cascoding technique and pole zero cancelation technique is used to ameliorate the gain and enhance the unity gain bandwidth respectively, which is the novelty of the circuit. In cascading technique a common source transistor drive a common gate transistor. The cascoding is used to enhance the output resistance and hence improve the overall gain of the operational amplifier with less complexity and less power dissipation. To bias the common gate transistor, a current mirror is used in this paper. The proposed circuit is designed and simulated using Cadence analog and digital system design tools of 45 nanometer CMOS technology. The simulated results of the circuit show DC gain of 63.62 dB, unity gain bandwidth of 2.70 GHz, slew rate of 1816 V/µs, phase margin of 59.53º, power supply of the proposed operational amplifier is 1.4 V (rail-to-rail ±700 mV, and power consumption is 0.71 mW. This circuit specification has encountered the requirements of radio frequency application.

  2. Analytical Expressions for Harmonic Distortion at Low Frequencies due to Device Mismatch in CMOS Current Mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1999-01-01

    One of the origins of harmonic distortion in current mirrors is the inevitable mismatch between the mirror transistors. In this brief we examine both single current mirrors and complementary class AB current mirrors and develop analytical expressions for the mismatch induced harmonic distortion. ...

  3. CMOS current controlled fully balanced current conveyor

    International Nuclear Information System (INIS)

    Wang Chunhua; Zhang Qiujing; Liu Haiguang

    2009-01-01

    This paper presents a current controlled fully balanced second-generation current conveyor circuit (CF-BCCII). The proposed circuit has the traits of fully balanced architecture, and its X-Y terminals are current controllable. Based on the CFBCCII, two biquadratic universal filters are also proposed as its applications. The CFBCCII circuits and the two filters were fabricated with chartered 0.35-μm CMOS technology; with ±1.65 V power supply voltage, the total power consumption of the CFBCCII circuit is 3.6 mW. Comparisons between measured and HSpice simulation results are also given.

  4. Low Voltage Current Mode Switched-Current-Mirror Mixer

    Directory of Open Access Journals (Sweden)

    Chunhua Wang

    2009-09-01

    Full Text Available A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror. Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which are alternatively activated. For ideal switching, the operation is equivalent to a conventional active mixer. This paper analyzes the performance of the SCM mixer, in comparison with the conventional mixer, demonstrating competitive performance at a lower supply voltage. Moreover, the new mixer’s die, without any passive components, is very small, and the conversion gain is easy to adjust. An experimental prototype was designed and simulated in standard chartered 0.18μm RF CMOS Process with Spectre in Cadence Design Systems. Experimental results show satisfactory mixer performance at 2.4 GHz.

  5. CMOS switched current phase-locked loop

    NARCIS (Netherlands)

    Leenaerts, D.M.W.; Persoon, G.G.; Putter, B.M.

    1997-01-01

    The authors present an integrated circuit realisation of a switched current phase-locked loop (PLL) in standard 2.4 µm CMOS technology. The centre frequency is tunable to 1 MHz at a clock frequency of 5.46 MHz. The PLL has a measured maximum phase error of 21 degrees. The chip consumes

  6. CMOS Current-mode Operational Amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1992-01-01

    current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2......A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

  7. A CMOS current-mode operational amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1993-01-01

    current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2......A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

  8. Design of a CMOS temperature sensor with current output

    NARCIS (Netherlands)

    Kolling, A.; Kölling, Arjan; Bak, Frans; Bergveld, Piet; Seevinck, E.; Seevinck, Evert

    1990-01-01

    In this paper a CMOS temperature-to-current converter is presented of which the output current is the difference between a PTC current and an NTC current. The PTC current is derived from a PTAT cell, while the NTC current is derived from a threshold voltage reference source. It is shown that this

  9. CMOS technology and current-feedback op-amps

    DEFF Research Database (Denmark)

    Bruun, Erik

    1993-01-01

    Some of the problems related to the application of CMOS technology to current-feedback operational amplifiers (CFB op-amps) are identified. Problems caused by the low device transconductance and by the absence of matching between p-channel and n-channel transistors are examined, and circuit...

  10. A CMOS four-quadrant analog current multiplier

    NARCIS (Netherlands)

    Wiegerink, Remco J.

    1991-01-01

    A CMOS four-quadrant analog current multiplier is described. The circuit is based on the square-law characteristic of an MOS transistor and is insensitive to temperature and process variations. The circuit is insensitive to the body effect so it is not necessary to place transistors in individual

  11. Noise Properties of CMOS Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1996-01-01

    The definition of the current conveyor is presented and it is shown how different generations of current conveyors can all be combined into a single definition of a multiple-output second generation current conveyor (CCII). Next, noise sources are introduced into the model, and a general noise...

  12. CMOS Current-mode Operational Amplifier

    OpenAIRE

    Kaulberg, Thomas

    1992-01-01

    A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-r...

  13. Current results of the tandem mirror experiment

    International Nuclear Information System (INIS)

    Drake, R.P.

    1980-01-01

    The basic operating characteristics of the Tandem Mirror Experiment, (TMX) at the Lawrence Livermore Laboratory in the USA have been established. Tandem-mirror plasmas have been produced using neutral-beam-fueled end plugs and a gas-fueled center cell. An axial potential well between the end plugs has been measured. There is direct evidence that this potential well enhances the axial confinement of the center-cell ions. The observed densities and loss currents are consistent with preliminary studies of the particle sources and losses near the magnetic axis. The observed confinement is consistent with theory when plasma fluctuations are low. When the requirement of drift-cyclotron loss-cone mode stability is violated, the plasma fluctuations degrade the center-cell confinement

  14. Maximum Bandwidth Enhancement of Current Mirror using Series-Resistor and Dynamic Body Bias Technique

    Directory of Open Access Journals (Sweden)

    V. Niranjan

    2014-09-01

    Full Text Available This paper introduces a new approach for enhancing the bandwidth of a low voltage CMOS current mirror. The proposed approach is based on utilizing body effect in a MOS transistor by connecting its gate and bulk terminals together for signal input. This results in boosting the effective transconductance of MOS transistor along with reduction of the threshold voltage. The proposed approach does not affect the DC gain of the current mirror. We demonstrate that the proposed approach features compatibility with widely used series-resistor technique for enhancing the current mirror bandwidth and both techniques have been employed simultaneously for maximum bandwidth enhancement. An important consequence of using both techniques simultaneously is the reduction of the series-resistor value for achieving the same bandwidth. This reduction in value is very attractive because a smaller resistor results in smaller chip area and less noise. PSpice simulation results using 180 nm CMOS technology from TSMC are included to prove the unique results. The proposed current mirror operates at 1Volt consuming only 102 µW and maximum bandwidth extension ratio of 1.85 has been obtained using the proposed approach. Simulation results are in good agreement with analytical predictions.

  15. On Dynamic Range Limitations of CMOS Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1999-01-01

    frequency band and for the situation where the conveyor is used over the full bandwidth achievable. Finally, the optimisation of the current input range is related to the distortion characteristics and it is pointed out that to a first order approximation the distortion is independent of the current range.......This paper is concerned with the dynamic range of continuous time CMOS current mode circuits. As a representative current mode device a class AB current conveyor is examined. First, the voltage input range of the high impedance Y input is investigated. Next, the current input range of the low...... impedance X input is investigated. It is compared to the thermal noise in the X to Z signal path in order to evaluate the dynamic range, and the dependencies of the dynamic range on the supply voltage and the transistor lay-out is derived, both for the situation where the conveyor is used over a narrow...

  16. Dynamic range of low-voltage cascode current mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik; Shah, Peter Jivan

    1995-01-01

    Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use....... The proposed configuration has the advantage of simplicity combined with a complete elimination of the need for fixed bias voltages or bias currents in the current mirror. A disadvantage is that it requires a higher input voltage to the current mirror...

  17. Design Considerations for CMOS Current Mode Operational Amplifiers and Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    implementations of current mode opamps in CMOS technology are described. Also, current conveyor configurations with multiple outputs and flexible feedback connections from outputs to inputs are introduced. The dissertation includes several examples of circuit configurations ranging from simple class A and class......This dissertation is about CMOS current conveyors and current mode operational amplifiers (opamps). They are generic devices for continuous time signal processing in circuits and systems where signals are represented by currents.Substantial advancements are reported in the dissertation, both...... related to circuit implementations and system configurations and to an analysis of the fundamental limitations of the current mode technique.In the field of system configurations and circuit implementations different configurations of high gain current opamps are introduced and some of the first...

  18. First principle leakage current reduction technique for CMOS devices

    CSIR Research Space (South Africa)

    Tsague, HD

    2015-12-01

    Full Text Available This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations...

  19. A multiwire ionization chamber readout circuit using current mirrors

    International Nuclear Information System (INIS)

    Rawnsley, W.R.; Smith, D.; Moskven, T.

    1997-01-01

    A circuit which utilizes current mirrors has been used to apply high voltage bias to the wires of a multiwire ionization chamber (MWIC) profile monitor while still allowing measurement of the beam-induced ion-electron currents collected on the wires. Bias voltages of up to 250 V have been used while wire currents over a range of 0.5 nA to 50 nA have been measured. The circuit is unipolar but can be designed for positive or negative bias. The mirrors also provide a current gain of 10, reducing the effects of transistor leakage and extending the useful range of the circuit to lower signal levels. A module containing 32 Wilson current mirrors has been constructed and is used with a MWIC monitor in TRIUMF close-quote s Parity experiment beamline. copyright 1997 American Institute of Physics

  20. Design of a Programmable Gain, Temperature Compensated Current-Input Current-Output CMOS Logarithmic Amplifier.

    Science.gov (United States)

    Ming Gu; Chakrabartty, Shantanu

    2014-06-01

    This paper presents the design of a programmable gain, temperature compensated, current-mode CMOS logarithmic amplifier that can be used for biomedical signal processing. Unlike conventional logarithmic amplifiers that use a transimpedance technique to generate a voltage signal as a logarithmic function of the input current, the proposed approach directly produces a current output as a logarithmic function of the input current. Also, unlike a conventional transimpedance amplifier the gain of the proposed logarithmic amplifier can be programmed using floating-gate trimming circuits. The synthesis of the proposed circuit is based on the Hart's extended translinear principle which involves embedding a floating-voltage source and a linear resistive element within a translinear loop. Temperature compensation is then achieved using a translinear-based resistive cancelation technique. Measured results from prototypes fabricated in a 0.5 μm CMOS process show that the amplifier has an input dynamic range of 120 dB and a temperature sensitivity of 230 ppm/°C (27 °C- 57°C), while consuming less than 100 nW of power.

  1. Low Voltage CMOS Fully Differential Current Feedback Amplifier with Controllable 3-dB Bandwidth

    International Nuclear Information System (INIS)

    Madian, A.H.; Mahmoud, S.A.; Ashour, M.A.; Soliman, A.M.

    2008-01-01

    This paper presents a new CMOS fully differential current feedback operational amplifier with controllable 3-dB bandwidth suitable for analog data processing and acquisition applications. The FDCFOA has the advantage of a wide range controllable 3-dB bandwidth (∼57 MHz to 500 MHz) without changing the feedback resistance this guarantee the stability of the circuit. The FDCFOA has a standby current of 320μA. PSpice simulations of the FDCFOA block were given using 0.25μm CMOS technology from AMI MOSIS and dual supply voltages ±0.75 V

  2. Mirroring

    DEFF Research Database (Denmark)

    Wegener, Charlotte; Wegener, Gregers

    2016-01-01

    and metaphorical value of mirroring for creativity theory across two different research fields — neuroscience and learning. We engage in a mutual (possibly creative) exploration of mirroring from ‘mirror neurons’ to mirroring in social learning theory. One of the most fascinating aspects of mirroring...... as a neurobiological and as a learning phenomenon is that it points to the embodied and unconscious aspects of social interaction. Thus, mirroring should not be reduced to the non-creative, mechanical repetition of the original, outstanding creativity. To mirror is a human capability built into our capacity to create......Most definitions of creativity emphasise originality. The creative product is recognised as distinct from other products and the creative person as someone who stands out from the crowd. What tend to be overlooked are acts of mirroring as a crucial element of the creative process. The human ability...

  3. Analysis of the Noise Characteristics of CMOS Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1997-01-01

    The definition of the current conveyor is reviewed and a multiple-output second generation current conveyor (CCII) is shown to combine the different generations of current conveyors presently existing. Next, noise sources are introduced, and a general noise model for the current conveyor is descr......The definition of the current conveyor is reviewed and a multiple-output second generation current conveyor (CCII) is shown to combine the different generations of current conveyors presently existing. Next, noise sources are introduced, and a general noise model for the current conveyor...

  4. A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies

    Directory of Open Access Journals (Sweden)

    A. Schmitz

    2005-01-01

    Full Text Available Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate. To maintain the high switching performance, the threshold voltage must be scaled according with the supply voltage. However, this leads to an increased subthreshold current of the transistors in standby mode (VGS=0. Another source of leakage is gate current, which becomes significant for gate oxides of 3nm and below. We propose a Self-Biasing Virtual Rails (SBVR - CMOS technique which acts like an adaptive local supply voltage in case of standby mode. Most important sources of leakage currents are reduced by this technique. Moreover, SBVR-CMOS is capable of conserving stored information in sleep mode, which is vital for memory circuits. Memories are exposed to radiation causing soft errors. This well-known problem becomes even worse in standby mode of typical SRAMs, that have low driving performance to withstand alpha particle hits. In this paper, a 16-transistor SRAM cell is proposed, which combines the advantage of extremely low leakage currents with a very high soft error stability.

  5. Current-Mode CMOS A/D Converter for pA to nA Input Currents

    DEFF Research Database (Denmark)

    Breten, Madalina; Lehmann, Torsten; Bruun, Erik

    1999-01-01

    This paper describes a current mode A/D converter designed for a maximum input current range of 5nA and a resolution of the order of 1pA. The converter is designed for a potentiostat for amperometric chemical sensors and provides a constant polarization voltage for the measuring electrode....... A prototype chip using the dual slope conversion method has been fabricated in a 0.7micron CMOS process. Experimental results from this converter are reported. Design problems and limitations of the converter are discussed and a new conversion technique providing a larger dynamic range and easy calibration...

  6. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    Science.gov (United States)

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-05

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

  7. Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    Goiffon, V.; Virmontois, C.; Magnan, P.; Cervantes, P.; Place, S.; Estribeau, M.; Martin-Gonthier, P.; Gaillardin, M.; Girard, S.; Paillet, P.

    2012-01-01

    This paper presents an investigation of Total Ionizing Dose (TID) induced dark current sources in Pinned Photodiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral shallow trench isolation does not seem to play a role in the degradation. The PPD area and a transfer gate contribution independent of the pixel dimensions appear to be the main sources of the TID induced dark current increase. This study also demonstrates that applying a negative voltage on the transfer gate during integration strongly reduces the radiation induced dark current. (authors)

  8. A Novel Programmable CMOS Fuzzifiers Using Voltage-to-Current Converter Circuit

    Directory of Open Access Journals (Sweden)

    K. P. Abdulla

    2012-01-01

    Full Text Available This paper presents a new voltage-input, current-output programmable membership function generator circuit (MFC using CMOS technology. It employs a voltage-to-current converter to provide the required current bias for the membership function circuit. The proposed MFC has several advantageous features. This MFC can be reconfigured to perform triangular, trapezoidal, S-shape, Z-Shape, and Gaussian membership forms. This membership function can be programmed in terms of its width, slope, and its center locations in its universe of discourses. The easily adjustable characteristics of the proposed circuit and its accuracy make it suitable for embedded system and industrial control applications. The proposed MFC is designed using the spice software, and simulation results are obtained.

  9. Negative Offset Operation of Four-Transistor CMOS Image Pixels for Increased Well Capacity and Suppressed Dark Current

    OpenAIRE

    Mheen, B.; Song, Y.J.; Theuwissen, J.P.

    2008-01-01

    This letter presents an electrical method to reduce dark current as well as increase well capacity of four-transistor pixels in a CMOS image sensor, utilizing a small negative offset voltage to the gate of the transfer (TX) transistor particularly only when the TX transistor is off. As a result, using a commercial pixel in a 0.18 ?m CMOS process, the voltage drop due to dark current of the pinned photodiode (PPD) is reduced by 6.1 dB and the well capacity is enhanced by 4.4 dB, which is attri...

  10. A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver

    International Nuclear Information System (INIS)

    Xu Jian; Zhou Zheng; Wu Yiqiang; Wang Zhigong; Chen Jianping

    2015-01-01

    A passive current switch mixer was designed for the second IF down-conversion in a DRM/DAB receiver. The circuit consists of an input transconductance stage, a passive current switching stage, and a current amplifier stage. The input transconductance stage employs a self-biasing current reusing technique, with a resistor shunt feedback to increase the gain and output impedance. A dynamic bias technique is used in the switching stage to ensure the stability of the overdrive voltage versus the PVT variations. A current shunt feedback is introduced to the conventional low-voltage second-generation fully balanced multi-output current converter (FBMOCCII), which provides very low input impedance and high output impedance. With the circuit working in current mode, the linearity is effectively improved with low supply voltages. Especially, the transimpedance stage can be removed, which simplifies the design considerably. The design is verified with a SMIC 0.18 μm RF CMOS process. The measurement results show that the voltage conversation gain is 1.407 dB, the NF is 16.22 dB, and the IIP3 is 4.5 dBm, respectively. The current consumption is 9.30 mA with a supply voltage of 1.8 V. This exhibits a good compromise among the gain, noise, and linearity for the second IF mixer in DRM/DAB receivers. (paper)

  11. Analysis of dark current images of a CMOS camera during gamma irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Náfrádi, Gábor, E-mail: nafradi@reak.bme.hu [INT, BME, EURATOM Association, H-1111 Budapest (Hungary); Czifrus, Szabolcs, E-mail: czifrus@reak.bme.hu [INT, BME, EURATOM Association, H-1111 Budapest (Hungary); Kocsis, Gábor, E-mail: kocsis.gabor@wigner.mta.hu [Wigner RCP, RMI, EURATOM Association, POB 49, 1525 Budapest (Hungary); Pór, Gábor, E-mail: por@reak.bme.hu [INT, BME, EURATOM Association, H-1111 Budapest (Hungary); Szepesi, Tamás, E-mail: szepesi.tamas@wigner.mta.hu [Wigner RCP, RMI, EURATOM Association, POB 49, 1525 Budapest (Hungary); Zoletnik, Sándor, E-mail: zoletnik.sandor@wigner.mta.hu [Wigner RCP, RMI, EURATOM Association, POB 49, 1525 Budapest (Hungary)

    2013-12-15

    Highlights: • Radiation tolerance of a fast framing CMOS camera EDICAM examined. • We estimate the expected gamma dose and spectrum of EDICAM with MCNP. • We irradiate EDICAM by 23.5 Gy in 70 min in a fission rector. • Dose rate normalised average brightness of frames grows linearly with the dose. • Dose normalised average brightness of frames follows the dose rate time evolution. -- Abstract: We report on the behaviour of the dark current images of the Event Detection Intelligent Camera (EDICAM) when placed into an irradiation field of gamma rays. EDICAM is an intelligent fast framing CMOS camera operating in the visible spectral range, which is designed for the video diagnostic system of the Wendelstein 7-X (W7-X) stellarator. Monte Carlo calculations were carried out in order to estimate the expected gamma spectrum and dose for an entire year of operation in W7-X. EDICAM was irradiated in a pure gamma field in the Training Reactor of BME with a dose of approximately 23.5 Gy in 1.16 h. During the irradiation, numerous frame series were taken with the camera with exposure times 20 μs, 50 μs, 100 μs, 1 ms, 10 ms, 100 ms. EDICAM withstood the irradiation, but suffered some dynamic range degradation. The behaviour of the dark current images during irradiation is described in detail. We found that the average brightness of dark current images depends on the total ionising dose that the camera is exposed to and the dose rate as well as on the applied exposure times.

  12. A study of different types of current mirrors using polysilicon TFTs

    International Nuclear Information System (INIS)

    Pappas, I; Nalpantidis, L; Kalenteridis, V; Siskos, S; Dimitriadis, C A; Hatzopoulos, A A

    2005-01-01

    Polysilicon thin-film technology has become of great interest due to the demand for large area electronic devices. Active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting displays (AMOLEDs) are among the fields where polysilicon thin-film transistors (poly-Si TFTs) are most commonly used. Such devices, generally, require analog signal processing. This fact makes the performance of basic analog blocks, such as current mirrors implemented with poly-Si TFTs, crucial. This paper examines the performance of various current mirror designs through simulation. Finally, a novel design of a current mirror is proposed aimed to be used in low voltage applications

  13. Self-amplified CMOS image sensor using a current-mode readout circuit

    Science.gov (United States)

    Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

    2014-05-01

    The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

  14. Negative Offset Operation of Four-Transistor CMOS Image Pixels for Increased Well Capacity and Suppressed Dark Current

    NARCIS (Netherlands)

    Mheen, B.; Song, Y.J.; Theuwissen, J.P.

    2008-01-01

    This letter presents an electrical method to reduce dark current as well as increase well capacity of four-transistor pixels in a CMOS image sensor, utilizing a small negative offset voltage to the gate of the transfer (TX) transistor particularly only when the TX transistor is off. As a result,

  15. A current to voltage converter for cryogenics using a CMOS operational amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, K; Saitoh, K; Shibayama, Y; Shirahama, K [Department of Physics, Keio University, Yokohama 223-8522 (Japan)], E-mail: khayashi@a2.keio.jp

    2009-02-01

    We have constructed a versatile current to voltage (I-V) converter operating at liquid helium temperature, using a commercially available all-CMOS OPamp. It is valuable for cryogenic measurements of electrical current of nano-pico amperes, for example, in scanning probe microscopy. The I-V converter is thermally linked to liquid helium bath and self-heated up to 10.7 K. We have confirmed its capability of a transimpedance gain of 10{sup 6} V/A and a bandwidth from DC to 200 kHz. In order to test the practical use for a frequency-modulation atomic force microscope, we have measured the resonance frequency shift of a quartz tuning fork at 32 kHz. In the operation of the I-V converter close to the sensor at liquid helium temperature, the signal-to-noise ratio has been improved to a factor of 13.6 compared to the operation at room temperature.

  16. A current to voltage converter for cryogenics using a CMOS operational amplifier

    International Nuclear Information System (INIS)

    Hayashi, K; Saitoh, K; Shibayama, Y; Shirahama, K

    2009-01-01

    We have constructed a versatile current to voltage (I-V) converter operating at liquid helium temperature, using a commercially available all-CMOS OPamp. It is valuable for cryogenic measurements of electrical current of nano-pico amperes, for example, in scanning probe microscopy. The I-V converter is thermally linked to liquid helium bath and self-heated up to 10.7 K. We have confirmed its capability of a transimpedance gain of 10 6 V/A and a bandwidth from DC to 200 kHz. In order to test the practical use for a frequency-modulation atomic force microscope, we have measured the resonance frequency shift of a quartz tuning fork at 32 kHz. In the operation of the I-V converter close to the sensor at liquid helium temperature, the signal-to-noise ratio has been improved to a factor of 13.6 compared to the operation at room temperature.

  17. Low power fast settling multi-standard current reusing CMOS fractional-N frequency synthesizer

    Institute of Scientific and Technical Information of China (English)

    Lou Wenfeng; Feng Peng; Wang Haiyong; Wu Nanjian

    2012-01-01

    A low power fast settling multi-standard CMOS fractional-N frequency synthesizer is proposed.The current reusing and frequency presetting techniques are adopted to realize the low power fast settling multi-standard fractional-N frequency synthesizer.An auxiliary non-volatile memory (NVM) is embedded to avoid the repetitive calibration process and to save power in practical application.This PLL is implemented in a 0.18μm technology.The frequency range is 0.3 to 2.54 GHz and the settling time is less than 5μs over the entire frequency range.The LC-VCO with the stacked divide-by-2 has a good figure of merit of-193.5 dBc/Hz.The measured phase noise of frequency synthesizer is about -115 dBc/Hz at 1 MHz offset when the carrier frequency is 2.4 GHz and the reference spurs are less than -52 dBc.The whole frequency synthesizer consumes only 4.35 mA @ 1.8 V.

  18. Low power fast settling multi-standard current reusing CMOS fractional-N frequency synthesizer

    International Nuclear Information System (INIS)

    Lou Wenfeng; Feng Peng; Wang Haiyong; Wu Nanjian

    2012-01-01

    A low power fast settling multi-standard CMOS fractional-N frequency synthesizer is proposed. The current reusing and frequency presetting techniques are adopted to realize the low power fast settling multi-standard fractional-N frequency synthesizer. An auxiliary non-volatile memory (NVM) is embedded to avoid the repetitive calibration process and to save power in practical application. This PLL is implemented in a 0.18 μm technology. The frequency range is 0.3 to 2.54 GHz and the settling time is less than 5 μs over the entire frequency range. The LC-VCO with the stacked divide-by-2 has a good figure of merit of −193.5 dBc/Hz. The measured phase noise of frequency synthesizer is about −115 dBc/Hz at 1 MHz offset when the carrier frequency is 2.4 GHz and the reference spurs are less than −52 dBc. The whole frequency synthesizer consumes only 4.35 mA and 1.8 V. (semiconductor integrated circuits)

  19. 10-bit segmented current steering DAC in 90nm CMOS technology

    International Nuclear Information System (INIS)

    Bringas, R Jr; Dy, F; Gerasta, O J

    2015-01-01

    This special project presents a 10-Bit 1Gs/s 1.2V/3.3V Digital-to-Analog Converter using1 Poly 9 Metal SAED 90-nm CMOS Technology intended for mixed-signal and power IC applications. To achieve maximum performance with minimum area, the DAC has been implemented in 6+4 Segmentation. The simulation results show a static performance of ±0.56 LSB INL and ±0.79 LSB DNL with a total layout chip area of 0.683 mm 2 .The segmented architecture is implemented using two sub DAC's, which are the LSB and MSB section with certain number bits. The DAC is designed using 4-BitBinary Weighted DAC for the LSB section and 6-BitThermometer-coded DAC for the MSB section. The thermometer-coded architecture provides the most optimized results in terms of linearity through reducing the clock feed-through effect especially in hot switching between multiple transistors. The binary- weighted architecture gives better linearity output in higher frequencies with better saturation in current sources. (paper)

  20. Dark current spectroscopy of space and nuclear environment induced displacement damage defects in pinned photodiode based CMOS image sensors

    International Nuclear Information System (INIS)

    Belloir, Jean-Marc

    2016-01-01

    CMOS image sensors are envisioned for an increasing number of high-end scientific imaging applications such as space imaging or nuclear experiments. Indeed, the performance of high-end CMOS image sensors has dramatically increased in the past years thanks to the unceasing improvements of microelectronics, and these image sensors have substantial advantages over CCDs which make them great candidates to replace CCDs in future space missions. However, in space and nuclear environments, CMOS image sensors must face harsh radiation which can rapidly degrade their electro-optical performances. In particular, the protons, electrons and ions travelling in space or the fusion neutrons from nuclear experiments can displace silicon atoms in the pixels and break the crystalline structure. These displacement damage effects lead to the formation of stable defects and to the introduction of states in the forbidden bandgap of silicon, which can allow the thermal generation of electron-hole pairs. Consequently, non ionizing radiation leads to a permanent increase of the dark current of the pixels and thus a decrease of the image sensor sensitivity and dynamic range. The aim of the present work is to extend the understanding of the effect of displacement damage on the dark current increase of CMOS image sensors. In particular, this work focuses on the shape of the dark current distribution depending on the particle type, energy and fluence but also on the image sensor physical parameters. Thanks to the many conditions tested, an empirical model for the prediction of the dark current distribution induced by displacement damage in nuclear or space environments is experimentally validated and physically justified. Another central part of this work consists in using the dark current spectroscopy technique for the first time on irradiated CMOS image sensors to detect and characterize radiation-induced silicon bulk defects. Many types of defects are detected and two of them are identified

  1. Utilization of Faraday Mirror in Fiber Optic Current Sensors

    Directory of Open Access Journals (Sweden)

    P. Fiala

    2008-12-01

    Full Text Available Fiber optic sensors dispose of some advantages in the field of electrical current and magnetic field measurement, like large bandwidth, linearity, light transmission possibilities. Unfortunately, they suffer from some parasitic phenomena. The crucial issue is the presence of induced and latent linear birefringence, which is imposed by the fiber manufacture imperfections as well as mechanical stress by fiber bending. In order to the linear birefringence compensation a promising method was chosen for pulsed current sensor design. The method employs orthogonal polarization conjugation by the back direction propagation of the light wave in the fiber. The Jones calculus analysis presents its propriety. An experimental fiber optic current sensor has been designed and realized. The advantage of the proposed method was proved considering to the sensitivity improvement.

  2. Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers

    Science.gov (United States)

    Katti, R. R.; Zou, D.; Reed, D.; Schipper, D.; Hynes, O.; Shaw, G.; Kaakani, H.

    2003-05-01

    Prior work has shown that current-in-plane (CIP) giant magnetoresistive (GMR) pseudo-spin-valve (PSV) devices grown on bulk Si wafers and bulk complementary metal-oxide semiconductor (CMOS) underlayers exhibit write and read characteristics that are suitable for application as nonvolatile memory devices. In this work, CIP GMR PSV devices fabricated on silicon-on-insulator CMOS underlayers are shown to support write and read performance. Reading and writing fields for selected devices are shown to be approximately 25%-50% that of unselected devices, which provides a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits. The switching characteristics of experimental devices were compared to and found to be similar with Landau-Lifschitz-Gilbert micromagnetic modeling results, which allowed inferring regions of reversible and irreversible rotations in magnetic reversal processes.

  3. Reflecting on the mirror neuron system in autism: a systematic review of current theories.

    Science.gov (United States)

    Hamilton, Antonia F de C

    2013-01-01

    There is much interest in the claim that dysfunction of the mirror neuron system in individuals with autism spectrum condition causes difficulties in social interaction and communication. This paper systematically reviews all published studies using neuroscience methods (EEG/MEG/TMS/eyetracking/EMG/fMRI) to examine the integrity of the mirror system in autism. 25 suitable papers are reviewed. The review shows that current data are very mixed and that studies using weakly localised measures of the integrity of the mirror system are hard to interpret. The only well localised measure of mirror system function is fMRI. In fMRI studies, those using emotional stimuli have reported group differences, but studies using non-emotional hand action stimuli do not. Overall, there is little evidence for a global dysfunction of the mirror system in autism. Current data can be better understood under an alternative model in which social top-down response modulation is abnormal in autism. The implications of this model and future research directions are discussed. Copyright © 2012 Elsevier Ltd. All rights reserved.

  4. Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode 0.18 mu{m} CMOS Image Sensors

    Science.gov (United States)

    Martin, E.; Nuns, T.; David, J.-P.; Gilard, O.; Vaillant, J.; Fereyre, P.; Prevost, V.; Boutillier, M.

    2014-02-01

    The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.

  5. A 200 mV low leakage current subthreshold SRAM bitcell in a 130 nm CMOS process

    International Nuclear Information System (INIS)

    Bai Na; Lü Baitao

    2012-01-01

    A low leakage current subthreshold SRAM in 130 nm CMOS technology is proposed for ultra low voltage (200 mV) applications. Almost all of the previous subthreshold works ignore the leakage current in both active and standby modes. To minimize leakage, a self-adaptive leakage cut off scheme is adopted in the proposed design without any extra dynamic energy dissipation or performance penalty. Combined with buffering circuit and reconfigurable operation, the proposed design ensures both read and standby stability without deteriorating writability in the subthreshold region. Compared to the referenced subthreshold SRAM bitcell, the proposed bitcell shows: (1) a better critical state noise margin, and (2) smaller leakage current in both active and standby modes. Measurement results show that the proposed SRAM functions well at a 200 mV supply voltage with 0.13 μW power consumption at 138 kHz frequency. (semiconductor integrated circuits)

  6. Pseudo-differential CMOS analog front-end circuit for wide-bandwidth optical probe current sensor

    Science.gov (United States)

    Uekura, Takaharu; Oyanagi, Kousuke; Sonehara, Makoto; Sato, Toshiro; Miyaji, Kousuke

    2018-04-01

    In this paper, we present a pseudo-differential analog front-end (AFE) circuit for a novel optical probe current sensor (OPCS) aimed for high-frequency power electronics. It employs a regulated cascode transimpedance amplifier (RGC-TIA) to achieve a high gain and a large bandwidth without using an extremely high performance operational amplifier. The AFE circuit is designed in a 0.18 µm standard CMOS technology achieving a high transimpedance gain of 120 dB Ω and high cut off frequency of 16 MHz. The measured slew rate is 70 V/µs and the input referred current noise is 1.02 pA/\\sqrt{\\text{Hz}} . The magnetic resolution and bandwidth of OPCS are estimated to be 1.29 mTrms and 16 MHz, respectively; the bandwidth is higher than that of the reported Hall effect current sensor.

  7. Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

    Science.gov (United States)

    Ichino, Shinya; Mawaki, Takezo; Teramoto, Akinobu; Kuroda, Rihito; Park, Hyeonwoo; Wakashima, Shunichi; Goto, Tetsuya; Suwa, Tomoyuki; Sugawa, Shigetoshi

    2018-04-01

    Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a floor noise of 35 µV rms. In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

  8. Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit

    Institute of Scientific and Technical Information of China (English)

    Ding Lili; Guo Hongxia; Chen Wei; Fan Ruyu

    2012-01-01

    Radiation-induced inter-device leakage is studied using an analytical model and TCAD simulation.There were some different opinions in understanding the process of defect build-up in trench oxide and parasitic leakage path turning on from earlier studies.To reanalyze this problem and make it beyond argument,every possible variable is considered using theoretical analysis,not just the change of electric field or oxide thickness independently.Among all possible inter-device leakage paths,parasitic structures with N-well as both drain and source are comparatively more sensitive to the total dose effect when a voltage discrepancy exists between the drain and source region.Since N-well regions are commonly connected to the same power supply,these kinds of structures will not be a problem in a real CMOS integrated circuit.Generally speaking,conduction paths of inter-device leakage existing in a real integrated circuit and under real electrical circumstances are not very sensitive to the total ionizing dose effect.

  9. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

    Science.gov (United States)

    Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

    2016-02-22

    The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.

  10. A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

    Science.gov (United States)

    Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

    2013-04-01

    In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats.

  11. Ultra-low-power, class-AB, CMOS four-quadrant current multiplier

    NARCIS (Netherlands)

    Sawigun, C.; Serdijn, W.A.

    2009-01-01

    A class-AB four-quadrant current multiplier constituted by a class-AB current amplifier and a current splitter which can handle input signals in excess of ten times the bias current is presented. The proposed circuit operation is based on the exponential characteristic of BJTs or subthreshold

  12. A current mode feed-forward gain control system for a 0.8 V CMOS hearing aid

    Energy Technology Data Exchange (ETDEWEB)

    Li Fanyang; Yang Haigang; Liu Fei; Yin Tao, E-mail: yanghg@mail.ie.ac.cn [Institute of Electronics, Chinese Academy of Sciences, Beijing 100080 (China)

    2011-06-15

    A current mode feed-forward gain control (CMFGC) technique is presented, which is applied in the front-end system of a hearing aid chip. Compared with conventional automatic gain control (AGC), CMFGC significantly improves the total harmonic distortion (THD) by digital gain control. To attain the digital gain control codes according to the extremely weak output signal from the microphone, a rectifier and a state controller implemented in current mode are proposed. A prototype chip has been designed based on a 0.13 {mu}m standard CMOS process. The measurement results show that the supply voltage can be as low as 0.6 V. And with the 0.8 V supply voltage, the THD is improved and below 0.06% (-64 dB) at the output level of 500 mV{sub p-p}, yet the power consumption is limited to 40 {mu}W. In addition, the input referred noise is only 4 {mu}V{sub rms} and the maximum gain is maintained at 33 dB. (semiconductor integrated circuits)

  13. A current mode feed-forward gain control system for a 0.8 V CMOS hearing aid

    International Nuclear Information System (INIS)

    Li Fanyang; Yang Haigang; Liu Fei; Yin Tao

    2011-01-01

    A current mode feed-forward gain control (CMFGC) technique is presented, which is applied in the front-end system of a hearing aid chip. Compared with conventional automatic gain control (AGC), CMFGC significantly improves the total harmonic distortion (THD) by digital gain control. To attain the digital gain control codes according to the extremely weak output signal from the microphone, a rectifier and a state controller implemented in current mode are proposed. A prototype chip has been designed based on a 0.13 μm standard CMOS process. The measurement results show that the supply voltage can be as low as 0.6 V. And with the 0.8 V supply voltage, the THD is improved and below 0.06% (-64 dB) at the output level of 500 mV p-p , yet the power consumption is limited to 40 μW. In addition, the input referred noise is only 4 μV rms and the maximum gain is maintained at 33 dB. (semiconductor integrated circuits)

  14. Simple BiCMOS CCCTA design and resistorless analog function realization.

    Science.gov (United States)

    Tangsrirat, Worapong

    2014-01-01

    The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA) in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (R x) and current transfer (i o/i z), are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

  15. Simple BiCMOS CCCTA Design and Resistorless Analog Function Realization

    Directory of Open Access Journals (Sweden)

    Worapong Tangsrirat

    2014-01-01

    Full Text Available The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (Rx and current transfer (io/iz, are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

  16. Mirror fusion reactors

    International Nuclear Information System (INIS)

    Anon.

    1978-01-01

    Conceptual design studies were made of fusion reactors based on the three current mirror-confinement concepts: the standard mirror, the tandem mirror, and the field-reversed mirror. Recent studies of the standard mirror have emphasized its potential as a fusion-fission hybrid reactor, designed to produce fuel for fission reactors. We have designed a large commercial hybrid and a small pilot-plant hybrid based on standard mirror confinement. Tandem mirror designs include a commercial 1000-MWe fusion power plant and a nearer term tandem mirror hybrid. Field-reversed mirror designs include a multicell commercial reactor producing 75 MWe and a single-cell pilot plant

  17. Mirror fusion reactors

    International Nuclear Information System (INIS)

    Carlson, G.A.; Moir, R.W.

    1978-01-01

    We have carried out conceptual design studies of fusion reactors based on the three current mirror confinement concepts: the standard mirror, the tandem mirror, and the field-reversed mirror. Recent studies of the standard mirror have emphasized its potential as a fusion-fission hybrid reactor, designed to produce fission fuel for fission reactors. We have designed a large commercial hybrid based on standard mirror confinement, and also a small pilot plant hybrid. Tandem mirror designs include a commercial 1000 MWe fusion power plant and a nearer term tandem mirror hybrid. Field-reversed mirror designs include a multicell commercial reactor producing 75 MWe and a single cell pilot plant

  18. Electron currents in field reversed mirror dynamics: Theory and hybrid simulation

    International Nuclear Information System (INIS)

    Stark, R.A.

    1987-01-01

    To model the dynamics of the Field-Reversed Mirror (FRM) as a whole we have developed a 1-D radical hybrid code which also incorporates the above electron null current model. This code, named FROST, models the plasma as azimuthally symmetric with no axial dependence. A multi-group method in energy and canonical angular momentum describes the large-orbit ions from the beam. Massless fluid equations describe electrons and low energy ions. Since a fluid treatment for electrons is invalid near a field null, the null region electron current model discussed above has been included for this region, a unique feature. Results of simulation of neutral beam start-up in a 2XIIB-like plasma is discussed. There FROST predicts that electron currents will retard, but not prevent reversal of the magnetic field at the plasma center. These results are optimistic when compared to actual reversal experiments in 2XIIB, because there finite axial length effects and micro-instabilities substantially deteriorated the ion confinement. Nevertheless, because of the importance of the electron current in a low field region in the FRM, FROST represents a valuable intermediate step toward a more complete description of FRM dynamics. 54 refs., 50 figs., 3 tabs

  19. Built-in current sensor for ΔIDDQ testing of deep submicron digital CMOS ICs

    NARCIS (Netherlands)

    Vazquez, J.R.; Pineda de Gyvez, J.

    2004-01-01

    This paper presents the implementation of a built-in current sensor that includes two recently reported new techniques for IDDQ testing to take into account the increased background current of defect-free circuits and its increased variance due to process variations. These techniques are the

  20. A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications

    Science.gov (United States)

    Kim, Seonyeong; Shin, Somyeong; Kim, Taekwang; Du, Hyewon; Song, Minho; Kim, Ki Soo; Cho, Seungmin; Lee, Sang Wook; Seo, Sunae

    2017-04-01

    The modulation of charge carrier concentration allows us to tune the Fermi level (E F) of graphene thanks to the low electronic density of states near the E F. The introduced metal oxide thin films as well as the modified transfer process can elaborately maneuver the amounts of charge carrier concentration in graphene. The self-encapsulation provides a solution to overcome the stability issues of metal oxide hole dopants. We have manipulated systematic graphene p-n junction structures for electronic or photonic application-compatible doping methods with current semiconducting process technology. We have demonstrated the anticipated transport properties on the designed heterojunction devices with non-destructive doping methods. This mitigates the device architecture limitation imposed in previously known doping methods. Furthermore, we employed E F-modulated graphene source/drain (S/D) electrodes in a low dimensional transition metal dichalcogenide field effect transistor (TMDFET). We have succeeded in fulfilling n-type, ambipolar, or p-type field effect transistors (FETs) by moving around only the graphene work function. Besides, the graphene/transition metal dichalcogenide (TMD) junction in either both p- and n-type transistor reveals linear voltage dependence with the enhanced contact resistance. We accomplished the complete conversion of p-/n-channel transistors with S/D tunable electrodes. The E F modulation using metal oxide facilitates graphene to access state-of-the-art complimentary-metal-oxide-semiconductor (CMOS) technology.

  1. Subthreshold currents in CMOS transistors made on oxygen-implanted silicon

    International Nuclear Information System (INIS)

    Foster, D.J.

    1983-01-01

    Kinks have been observed in subthreshold current plots of mesa-shaped n-channel transistors made on oxygen-implanted silicon substrates. The kinks represent additional current flow and are due to overlapping fields from the gate electrode causing early corner inversion and to a Qsub(ss) side-wall effect. Subthreshold currents in n-channel transistors are dominated by the two effects which, as a consequence, reduce threshold voltages especially in narrow n-channel transistors. The subthreshold characteristics of p-channel transistors were not affected in the same way. (author)

  2. ICON, a current model preamplifier in CMOS technology for use with high rate particle detectors

    International Nuclear Information System (INIS)

    Anghinolfi, F.; Aspell, P.; Campbell, M.; Heijne, E.H.M.; Jarron, P.; Meddeler, G.; Santiard, J.C.

    1993-01-01

    The ICON current mode preamplifier is intended for use in experiments at high rate hadron colliders. The transient response and noise performance have been analyzed. One chip has been made using an ICON circuit with resistive feedback to produce a preamplifier with a peaking time of below 10 ns. This fast preamplifier has a gain of 870 mV/pC and a power dissipation of around 1 mW. Another chip was made which uses the ICON circuit as the front-end to a dual port analog memory. The noise measured is between 2,400 e - and 3,000 e - . An important characteristic of ICON is that it can tolerate a detector leakage current of 10 μA at the DC coupled input. Therefore, it is very suitable for silicon detector systems under severe radiation conditions

  3. Wideband CMOS receivers

    CERN Document Server

    Oliveira, Luis

    2015-01-01

    This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

  4. High-Voltage-Input Level Translator Using Standard CMOS

    Science.gov (United States)

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  5. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    Science.gov (United States)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  6. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

  7. General formulation for magnetohydrodynamic wave propagation, fire-hose, and mirror instabilities in Harris-type current sheets

    International Nuclear Information System (INIS)

    Hau, L.-N.; Lai, Y.-T.

    2013-01-01

    Harris-type current sheets with the magnetic field model of B-vector=B x (z)x-caret+B y (z)y-caret have many important applications to space, astrophysical, and laboratory plasmas for which the temperature or pressure usually exhibits the gyrotropic form of p↔=p ∥ b-caretb-caret+p ⊥ (I↔−b-caretb-caret). Here, p ∥ and p ⊥ are, respectively, to be the pressure component along and perpendicular to the local magnetic field, b-caret=B-vector/B. This study presents the general formulation for magnetohydrodynamic (MHD) wave propagation, fire-hose, and mirror instabilities in general Harris-type current sheets. The wave equations are expressed in terms of the four MHD characteristic speeds of fast, intermediate, slow, and cusp waves, and in the local (k ∥ ,k ⊥ ,z) coordinates. Here, k ∥ and k ⊥ are, respectively, to be the wave vector along and perpendicular to the local magnetic field. The parameter regimes for the existence of discrete and resonant modes are identified, which may become unstable at the local fire-hose and mirror instability thresholds. Numerical solutions for discrete eigenmodes are shown for stable and unstable cases. The results have important implications for the anomalous heating and stability of thin current sheets.

  8. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    International Nuclear Information System (INIS)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

    2012-01-01

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

  9. CMOS circuits manual

    CERN Document Server

    Marston, R M

    1995-01-01

    CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

  10. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35microm SiGe BiCMOS technology

    International Nuclear Information System (INIS)

    Niu, G.; Mathew, S.J.; Banerjee, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Subbanna, S.

    1999-01-01

    The effects of gamma irradiation on the Shallow-Trench Isolation (STI) leakage currents in a SiGe BiCMOS technology are investigated for the first time, and shown to be strongly dependent on the irradiation gate bias and operating substrate bias. A positive irradiation gate bias significantly enhances the STI leakage, suggesting a strong field assisted nature of the charge buildup process in the STI. Numerical simulations also suggest the existence of fixed positive charges deep in the bulk along the STI/Si interface. A negative substrate bias, however, effectively suppresses the STI leakage, and can be used to eliminate the leakage produced by the charges deep in the bulk under irradiation

  11. Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC

    CERN Document Server

    Stucci, Stefania Antonia; Lynn, Dave; Kierstead, James; Kuczewski, Philip; van Nieuwenhuizen, Gerrit J; Rosin, Guy; Tricoli, Alessandro

    2017-01-01

    The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipation. As part of the R&D; program for the upgrade of the ATLAS inner detector tracker for the High Luminosity upgrade of the LHC at CERN, a dedicated set of irradiations have been carried out with the $^60$Co gamma-ray source at the Brookhaven National Laboratory. Measurements will be presented that characterise the increase in the digital leakage current in the 130 nm-technology ABC130 readout chips. The variation of the current as a function of time and total ionising dose has been studied under various conditions of dose rate, temperature and power applied to the chip. The range of variation of dose rates and temperatures has been set to be close to those expected at the High Luminosity LHC, i.e. in the range 0...

  12. A wideband current-commutating passive mixer for multi-standard receivers in a 0.18 μm CMOS

    International Nuclear Information System (INIS)

    Bao Kuan; Fan Xiangning; Li Wei; Wang Zhigong

    2013-01-01

    This paper reports a wideband passive mixer for direct conversion multi-standard receivers. A brief comparison between current-commutating passive mixers and active mixers is presented. The effect of source and load impedance on the linearity of a mixer is analyzed. Specially, the impact of the input impedance of the transimpedance amplifier (TIA), which acts as the load impedance of a mixer, is investigated in detail. The analysis is verified by a passive mixer implemented with 0.18 μm CMOS technology. The circuit is inductorless and can operate over a broad frequency range. On wafer measurements show that, with radio frequency (RF) ranges from 700 MHz to 2.3 GHz, the mixer achieves 21 dB of conversion voltage gain with a −1 dB intermediate frequency (IF) bandwidth of 10 MHz. The measured IIP3 is 9 dBm and the measured double-sideband noise figure (NF) is 10.6 dB at 10 MHz output. The chip occupies an area of 0.19 mm 2 and drains a current of 5.5 mA from a 1.8 V supply. (semiconductor integrated circuits)

  13. Mirror monochromator

    Energy Technology Data Exchange (ETDEWEB)

    Mankos, Marian [Electron Optica, Inc., Palo Alto, CA (United States); Shadman, Khashayar [Electron Optica, Inc., Palo Alto, CA (United States)

    2014-12-02

    In this SBIR project, Electron Optica, Inc. (EOI) is developing a mirror electron monochromator (MirrorChrom) attachment to new and retrofitted electron microscopes (EMs) for improving the energy resolution of the EM from the characteristic range of 0.2-0.5 eV to the range of 10-50 meV. This improvement will enhance the characterization of materials by imaging and spectroscopy. In particular, the monochromator will refine the energy spectra characterizing materials, as obtained from transmission EMs [TEMs] fitted with electron spectrometers, and it will increase the spatial resolution of the images of materials taken with scanning EMs (SEMs) operated at low voltages. EOI’s MirrorChrom technology utilizes a magnetic prism to simultaneously deflect the electron beam off the axis of the microscope column by 90° and disperse the electrons in proportional to their energies into a module with an electron mirror and a knife-edge. The knife-edge cuts off the tails of the energy distribution to reduce the energy spread of the electrons that are reflected, and subsequently deflected, back into the microscope column. The knife-edge is less prone to contamination, and thereby charging, than the conventional slits used in existing monochromators, which improves the reliability and stability of the module. The overall design of the MirrorChrom exploits the symmetry inherent in reversing the electron trajectory in order to maintain the beam brightness – a parameter that impacts how well the electron beam can be focused downstream onto a sample. During phase I, EOI drafted a set of candidate monochromator architectures and evaluated the trade-offs between energy resolution and beam current to achieve the optimum design for three particular applications with market potential: increasing the spatial resolution of low voltage SEMs, increasing the energy resolution of low voltage TEMs (beam energy of 5-20 keV), and increasing the energy resolution of conventional TEMs (beam

  14. Magneto-optic current sensor with Faraday mirror for linear birefringence compensation

    OpenAIRE

    Arroyo Breña, Javier; Rodriguez Horche, Paloma; Martín Minguez, Alfredo

    2012-01-01

    Fiber optic sensors have some advantages in subjects related with electrical current and magnetic field measurement. In spite of the optical fiber utilization advantages we have to take into account undesirable effects, which are present in real non-ideal optical fibers. In telecommunication and sensor application fields the presence of inherent and induced birefringence is crucial. The presence of birefringence may cause an undesirable change in the polarization state. In order to compensate...

  15. Smoke and mirrors: the perceived benefits of continued tobacco use among current smokers

    Directory of Open Access Journals (Sweden)

    Hugh Klein

    2014-09-01

    Full Text Available Despite 50+ years of public health efforts to reduce smoking rates in the United States, approximately one-fifth of the adults living in this country continue to smoke cigarettes. Previous studies have examined smokers’ risk perceptions of cigarette smoking, as well as the perceived benefits of quitting smoking. Less research has focused on the perceived benefits of smoking among current cigarette smokers. The latter is the main focus of the present paper. Questionnaire-based interviews were conducted with a community-based sample of 485 adult current cigarette smokers recruited from the Atlanta, Georgia, metropolitan area between 2004 and 2007. Active and passive recruiting approaches were used, along with a targeted sampling strategy. Results revealed that most current cigarette smokers perceive themselves to experience benefits as a result of their cigarette use, including (among others increased relaxation, diminished nervousness in social situations, enjoyment of the taste of cigarettes when smoking, and greater enjoyment of parties when smoking. Perceiving benefits from cigarette smoking was associated with a variety of tobacco use measures, such as smoking more cigarettes, an increased likelihood of chain smoking, and overall negative attitude toward quitting smoking, among others. Several factors were associated with the extent to which smokers perceived themselves to benefit from their tobacco use, including education attainment, the age of first purchasing cigarettes, the proportion of friends who smoked, hiding smoking from others, being internally-oriented regarding locus of control, and self-esteem.

  16. A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

    Energy Technology Data Exchange (ETDEWEB)

    Krit, Salahddine; Qjidaa, Hassan; Affar, Imad El; Khadija, Yafrah; Messghati, Ziani; El-Ghzizal, Yassir, E-mail: krit_salah@yahoo.f, E-mail: qjidah@yahoo.f [Faculty of Sciences Dhar El Mehraz, Laboratory of Electronic, Signal-Systymes and Informatic (LESSI) Fes (Morocco)

    2010-04-15

    This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-{mu}m CMOS technology and operates with a 2.7 to 3.6 V supply voltage. It has an area of 0.4 mm{sup 2}; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption. (semiconductor integrated circuits)

  17. Current-Mode CMOS A/D Converter for Pico Ampere-Range with a Potentiostatic Input

    DEFF Research Database (Denmark)

    Breten, Madalina

    1999-01-01

    amount of a certain gas in a solution, such as oxygen in blood, can be determined by measuring the concentration-dependent current. The circuit that maintains the electrochemical stability in the sensor, as well as buffering the current output is called potentiostat.The DC current at the output....... In this context conversion techniques of the integration-type are preferred, such as dual-slope, multi-slope, or sigma-delta modulation. The performances of the comparator, clock-feedthrough effect, and the offset compensation are the main problems. Furthermore, if an analog circuit is designed as a building......-out. The influence and methods to reduce the nonlinearities of the A/D converter are discussed. At the input of the integrator was implemented a bridge of 4-switches in order to measure the low current with minimum charge injection, and to overcome the drift problems.A new conversion technique is proposed: folded-dual-slope...

  18. 基于DLL的RF CMOS振荡器中电荷泵电流源失配%Current Mismatches in Charge Pumps of DLL-Based RF CMOS Oscillators

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    研究了电荷泵中电流源失配造成的假频分量,推导出了一个用于计算假频分量的公式.提供了两个数表用于直观了解参数改变时假频变化情况.最后对设计基于DLL的RF CMOS振荡器提供了一些参考方法.%A research on the spurious tones due to the current mismatch in charge pumps of DLL (Delay Locked Loop) -based RF CMOS oscillators is performed. An equation for strength evaluation of the spurious tones is derived. Two tables are provided to make it obvious to understand for the characteristics of spurious tones changing with related parameters. Some suggestions are given for the design of a DLL-based RF CMOS oscillators.

  19. 1.5V fully programmable CMOS Membership Function Generator Circuit with proportional DC-voltage control

    Directory of Open Access Journals (Sweden)

    C. Muñiz-Montero

    2013-06-01

    Full Text Available A Membership Function Generator Circuit (MFGC with bias supply of 1.5 Volts and independent DC-voltage programmable functionalities is presented. The realization is based on a programmable differential current mirror and three compact voltage-to-current converters, allowing continuous and quasi-linear adjustment of the center position, height, width and slopes of the triangular/trapezoidal output waveforms. HSPICE simulation results of the proposed circuit using the parameters of a double-poly, three metal layers, 0.5 μm CMOS technology validate the functionality of the proposed architecture, which exhibits a maximum deviation of the linearity in the programmability of 7 %.

  20. Improving motor performance without training: the effect of combining mirror visual feedback with transcranial direct current stimulation.

    Science.gov (United States)

    von Rein, Erik; Hoff, Maike; Kaminski, Elisabeth; Sehm, Bernhard; Steele, Christopher J; Villringer, Arno; Ragert, Patrick

    2015-04-01

    Mirror visual feedback (MVF) during motor training has been shown to improve motor performance of the untrained hand. Here we thought to determine if MVF-induced performance improvements of the left hand can be augmented by upregulating plasticity in right primary motor cortex (M1) by means of anodal transcranial direct current stimulation (a-tDCS) while subjects trained with the right hand. Participants performed a ball-rotation task with either their left (untrained) or right (trained) hand on two consecutive days (days 1 and 2). During training with the right hand, MVF was provided concurrent with two tDCS conditions: group 1 received a-tDCS over right M1 (n = 10), whereas group 2 received sham tDCS (s-tDCS, n = 10). On day 2, performance was reevaluated under the same experimental conditions compared with day 1 but without tDCS. While baseline performance of the left hand (day 1) was not different between groups, a-tDCS exhibited stronger MVF-induced performance improvements compared with s-tDCS. Similar results were observed for day 2 (without tDCS application). A control experiment (n = 8) with a-tDCS over right M1 as outlined above but without MVF revealed that left hand improvement was significantly less pronounced than that induced by combined a-tDCS and MVF. Based on these results, we provide novel evidence that upregulating activity in the untrained M1 by means of a-tDCS is capable of augmenting MVF-induced performance improvements in young normal volunteers. Our findings suggest that concurrent MVF and tDCS might have synergistic and additive effects on motor performance of the untrained hand, a result of relevance for clinical approaches in neurorehabilitation and/or exercise science. Copyright © 2015 the American Physiological Society.

  1. Einstein's Mirror

    Science.gov (United States)

    Gjurchinovski, Aleksandar; Skeparovski, Aleksandar

    2008-01-01

    Reflection of light from a plane mirror in uniform rectilinear motion is a century-old problem, intimately related to the foundations of special relativity. The problem was first investigated by Einstein in his famous 1905 paper by using the Lorentz transformations to switch from the mirror's rest frame to the frame where the mirror moves at a…

  2. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-11-15

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

  3. Real-time mirror steering for improved closed loop neoclassical tearing mode suppression by electron cyclotron current drive in DIII-D

    Energy Technology Data Exchange (ETDEWEB)

    Kolemen, E., E-mail: ekolemen@pppl.gov [Princeton Plasma Physics Laboratory, PO Box 45, Princeton, NJ 08543-0451 (United States); Ellis, R. [Princeton Plasma Physics Laboratory, PO Box 45, Princeton, NJ 08543-0451 (United States); La Haye, R.J.; Humphreys, D.A.; Lohr, J.; Noraky, S.; Penaflor, B.G.; Welander, A.S. [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States)

    2013-11-15

    Highlights: • We developed neoclassical tearing mode (NTM) control system for DIII-D, which uses six sets of real-time steerable mirrors in order to move the electron cyclotron current drive (ECCD) deposition location in plasma. • This algorithm accurately finds the NTM island location employing motional Stark effect EFIT MHD equilibrium reconstruction. • Successful NTM suppression and preemption has been achieved in DIII-D using this control system to automatically switches on and off gyrotrons when NTM is detected and rapidly align the NTM island and the ECCD deposition location. -- Abstract: The development and operation of the neoclassical tearing mode (NTM) avoidance and control system for DIII-D, which uses six sets of real-time steerable mirrors in order to move the electron cyclotron current drive (ECCD) deposition location in plasma, is described. The real-time DIII-D NTM control algorithm residing in the Plasma Control System (PCS) automatically detects an NTM by analysis of the Mirnov diagnostics, employs motional Stark effect (MSE) EFIT MHD equilibrium reconstruction to locate the rational q-surface where the NTM island can be found, then calculates the appropriate mirror position for alignment of the ECCD with the island using ray tracing. The control commands from PCS are sent to the electron cyclotron system to switch on and off or modulate the gyrotrons and to the steerable mirror system to move the steerable mirrors to the requested positions. Successful NTM suppression has been achieved in DIII-D using this control system to rapidly align the NTM island and the ECCD deposition location, and to actively maintain the alignment as plasma conditions change.

  4. Chiral mirrors

    International Nuclear Information System (INIS)

    Plum, Eric; Zheludev, Nikolay I.

    2015-01-01

    Mirrors are used in telescopes, microscopes, photo cameras, lasers, satellite dishes, and everywhere else, where redirection of electromagnetic radiation is required making them arguably the most important optical component. While conventional isotropic mirrors will reflect linear polarizations without change, the handedness of circularly polarized waves is reversed upon reflection. Here, we demonstrate a type of mirror reflecting one circular polarization without changing its handedness, while absorbing the other. The polarization-preserving mirror consists of a planar metasurface with a subwavelength pattern that cannot be superimposed with its mirror image without being lifted out of its plane, and a conventional mirror spaced by a fraction of the wavelength from the metasurface. Such mirrors enable circularly polarized lasers and Fabry-Pérot cavities with enhanced tunability, gyroscopic applications, polarization-sensitive detectors of electromagnetic waves, and can be used to enhance spectroscopies of chiral media

  5. Spiking Neural Networks with Unsupervised Learning Based on STDP Using Resistive Synaptic Devices and Analog CMOS Neuron Circuit.

    Science.gov (United States)

    Kwon, Min-Woo; Baek, Myung-Hyun; Hwang, Sungmin; Kim, Sungjun; Park, Byung-Gook

    2018-09-01

    We designed the CMOS analog integrate and fire (I&F) neuron circuit can drive resistive synaptic device. The neuron circuit consists of a current mirror for spatial integration, a capacitor for temporal integration, asymmetric negative and positive pulse generation part, a refractory part, and finally a back-propagation pulse generation part for learning of the synaptic devices. The resistive synaptic devices were fabricated using HfOx switching layer by atomic layer deposition (ALD). The resistive synaptic device had gradual set and reset characteristics and the conductance was adjusted by spike-timing-dependent-plasticity (STDP) learning rule. We carried out circuit simulation of synaptic device and CMOS neuron circuit. And we have developed an unsupervised spiking neural networks (SNNs) for 5 × 5 pattern recognition and classification using the neuron circuit and synaptic devices. The hardware-based SNNs can autonomously and efficiently control the weight updates of the synapses between neurons, without the aid of software calculations.

  6. U. S. Mirror Program

    International Nuclear Information System (INIS)

    Fowler, T.K.

    1978-01-01

    The mirror approach is now the principal alternate to the tokamak in the U.S. magnetic fusion energy program. The program is now focused on two new concepts that can obtain high values of Q, defined as the ratio of fusion power output to the neutral beam power injected to sustain the reaction. These are the tandem mirror and field reversed mirror concepts. Theoretically both concepts should be able to attain Q = 5 or more, as compared with Q approximately 1 in previous mirror designs. Success with either or both of these approaches would point the way toward fusion power plants with many attractive features. The linear geometry of mirror systems offers a distinct alternative to the toroidal tokamak. As a direct consequence of this difference in geometry, it is generally possible to build mirror systems in smaller units of modular construction that can probably be made to operate in steady-state. During the next 5 years the main mirror facilities in the U.S. will be the 2XIIB (renamed Beta II); a tandem mirror experiment caled TMX; and the Mirror Fusion Test Facility (MFTF) scheduled to be completed in 1981 at a cost of $94 million. As a background for discussing this program and mirror reactor concepts in later lectures, the current status of mirror physics will be reviewed by comparing theory and experimental data in four critical areas. These are adiabatic confinement of individual ions, electron heat losses out of the ends of the machine, the achievement of beta values of order unity; and stabilization of ''loss cone'' modes

  7. Optical transmission of low-level signals with high dynamic range using the optically-coupled current-mirror architecture

    Energy Technology Data Exchange (ETDEWEB)

    Camin, Daniel V. [Dipartimento di Fisica dell' Universita degli Studi di Milano and INFN, Milan (Italy)]. E-mail: Daniel.Victor.Camin@mi.infn.it; Grassi, Valerio [Dipartimento di Fisica dell' Universita degli Studi di Milano and INFN, Milan (Italy); De Donato, Cinzia [Dipartimento di Fisica dell' Universita degli Studi di Milano and INFN, Milan (Italy)

    2007-03-01

    In this paper we illustrate the application of a novel circuit architecture, the Optically-Coupled Current-Mirror (OCCM), conceived for the linear transmission of analogue signals via fibre optics. We installed 880 OCCMs in the PMTs of the first two telescopes of the cosmic-ray experiment Pierre Auger. The Pierre Auger Observatory (PAO) has been designed to increase the statistics of cosmic-rays with energies above 10{sup 18}eV. Two different techniques have been adopted: the Surface Detector (SD) modules that comprise 1600 tanks spaced each other by 1.5km within an area of 3000km{sup 2}. On the other side there are four buildings, the Optical Stations (OS), in which six telescopes are installed in each one of the four OS, at the periphery of the site, looking inwards. The telescopes are sensitive to the UV light created at the moment a high-energy shower develops in the atmosphere and is within the field-of-view (FOV) of the telescopes. The PAO is located in the Northern Patagonia, not far from the Cordillera de Los Andes, in Argentina. Both detector types, FD telescopes and SD modules, are sensitive to the UV light resulting from the interaction of high-energy particles and the nitrogen molecules in the atmosphere. The UV-sensitive telescopes operate only at night when the sky is completely dark. Otherwise, the light collected by the telescopes may give origin to severe damage in particular if those telescopes point at twilight or to artificial light sources. The duty cycle of the telescope's operation is therefore limited to about 10% or slightly more than that, if data are taken also when there is a partial presence of the Moon. The SD modules establish, independently of the telescopes, the geometry of the event. At the same time a shower reconstruction is performed using the telescope's data, independently of the SD modules. Use of both sets of data, taken by the FD telescopes and by the SD modules, allows the hybrid reconstruction that significantly

  8. Optical transmission of low-level signals with high dynamic range using the optically-coupled current-mirror architecture

    International Nuclear Information System (INIS)

    Camin, Daniel V.; Grassi, Valerio; De Donato, Cinzia

    2007-01-01

    In this paper we illustrate the application of a novel circuit architecture, the Optically-Coupled Current-Mirror (OCCM), conceived for the linear transmission of analogue signals via fibre optics. We installed 880 OCCMs in the PMTs of the first two telescopes of the cosmic-ray experiment Pierre Auger. The Pierre Auger Observatory (PAO) has been designed to increase the statistics of cosmic-rays with energies above 10 18 eV. Two different techniques have been adopted: the Surface Detector (SD) modules that comprise 1600 tanks spaced each other by 1.5km within an area of 3000km 2 . On the other side there are four buildings, the Optical Stations (OS), in which six telescopes are installed in each one of the four OS, at the periphery of the site, looking inwards. The telescopes are sensitive to the UV light created at the moment a high-energy shower develops in the atmosphere and is within the field-of-view (FOV) of the telescopes. The PAO is located in the Northern Patagonia, not far from the Cordillera de Los Andes, in Argentina. Both detector types, FD telescopes and SD modules, are sensitive to the UV light resulting from the interaction of high-energy particles and the nitrogen molecules in the atmosphere. The UV-sensitive telescopes operate only at night when the sky is completely dark. Otherwise, the light collected by the telescopes may give origin to severe damage in particular if those telescopes point at twilight or to artificial light sources. The duty cycle of the telescope's operation is therefore limited to about 10% or slightly more than that, if data are taken also when there is a partial presence of the Moon. The SD modules establish, independently of the telescopes, the geometry of the event. At the same time a shower reconstruction is performed using the telescope's data, independently of the SD modules. Use of both sets of data, taken by the FD telescopes and by the SD modules, allows the hybrid reconstruction that significantly improves the data

  9. Analog filters in nanometer CMOS

    CERN Document Server

    Uhrmann, Heimo; Zimmermann, Horst

    2014-01-01

    Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics ...

  10. Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

    CERN Document Server

    Wang, T.

    2017-01-01

    The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

  11. High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

    CERN Document Server

    García, Marcos Fernández; Echeverría, Richard Jaramillo; Moll, Michael; Santos, Raúl Montero; Moya, David; Pinto, Rogelio Palomo; Vila, Iván

    2016-01-01

    For the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. The unprecedented spatial resolution of this new method comes from the fact that measurable free carrier generation in two photon mode only occurs in a micrometric scale voxel around the focus of the beam. Real three-dimensional spatial resolution is achieved by scanning the beam focus within the sample.

  12. High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

    Energy Technology Data Exchange (ETDEWEB)

    García, Marcos Fernández; Sánchez, Javier González; Echeverría, Richard Jaramillo [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Moll, Michael [CERN, Organisation europénne pour la recherche nucléaire, CH-1211 Genéve 23 (Switzerland); Santos, Raúl Montero [SGIker Laser Facility, UPV/EHU, Sarriena, s/n - 48940 Leioa-Bizkaia (Spain); Moya, David [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Pinto, Rogelio Palomo [Departamento de Ingeniería Electrónica, Escuela Superior de Ingenieros Universidad de Sevilla (Spain); Vila, Iván [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain)

    2017-02-11

    For the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. The unprecedented spatial resolution of this new method comes from the fact that measurable free carrier generation in two photon mode only occurs in a micrometric scale voxel around the focus of the beam. Real three-dimensional spatial resolution is achieved by scanning the beam focus within the sample.

  13. Mesmerising mirror neurons.

    Science.gov (United States)

    Heyes, Cecilia

    2010-06-01

    Mirror neurons have been hailed as the key to understanding social cognition. I argue that three currents of thought-relating to evolution, atomism and telepathy-have magnified the perceived importance of mirror neurons. When they are understood to be a product of associative learning, rather than an adaptation for social cognition, mirror neurons are no longer mesmerising, but they continue to raise important questions about both the psychology of science and the neural bases of social cognition. Copyright 2010 Elsevier Inc. All rights reserved.

  14. Mirror symmetry

    CERN Document Server

    Voisin, Claire

    1999-01-01

    This is the English translation of Professor Voisin's book reflecting the discovery of the mirror symmetry phenomenon. The first chapter is devoted to the geometry of Calabi-Yau manifolds, and the second describes, as motivation, the ideas from quantum field theory that led to the discovery of mirror symmetry. The other chapters deal with more specialized aspects of the subject: the work of Candelas, de la Ossa, Greene, and Parkes, based on the fact that under the mirror symmetry hypothesis, the variation of Hodge structure of a Calabi-Yau threefold determines the Gromov-Witten invariants of its mirror; Batyrev's construction, which exhibits the mirror symmetry phenomenon between hypersurfaces of toric Fano varieties, after a combinatorial classification of the latter; the mathematical construction of the Gromov-Witten potential, and the proof of its crucial property (that it satisfies the WDVV equation), which makes it possible to construct a flat connection underlying a variation of Hodge structure in the ...

  15. Einstein's Mirror

    Science.gov (United States)

    Gjurchinovski, Aleksandar; Skeparovski, Aleksandar

    2008-10-01

    Reflection of light from a plane mirror in uniform rectilinear motion is a century-old problem, intimately related to the foundations of special relativity.1-4 The problem was first investigated by Einstein in his famous 1905 paper by using the Lorentz transformations to switch from the mirror's rest frame to the frame where the mirror moves at a constant velocity.5 Einstein showed an intriguing fact that the usual law of reflection would not hold in the case of a uniformly moving mirror, that is, the angles of incidence and reflection of the light would not equal each other. Later on, it has been shown that the law of reflection at a moving mirror can be obtained in various alternative ways,6-10 but none of them seems suitable for bringing this interesting subject into the high school classroom.

  16. CARIOCA : A Fast Binary Front-End Implemented in 0.25Pm CMOS using a Novel Current-Mode Technique for the LHCb Muon Detector

    CERN Multimedia

    2000-01-01

    The CARIOCA front-end is an amplifier discriminator chip, using 0.25mm CMOS technology, developed with a very fast and low noise preamplifier. This prototype was designed to have input impedance below 10W. Measurements showed a peaking time of 14ns and noise of 450e- at zero input capacitance, with a noise slope of 37.4 e-/pF. The sensitivity of 8mV/fC remains almost unchanged up to a detector capacitance of 120pF.

  17. Beyond CMOS nanodevices 2

    CERN Document Server

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

  18. Beyond CMOS nanodevices 1

    CERN Document Server

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

  19. Mirror reactor surface study

    Energy Technology Data Exchange (ETDEWEB)

    Hunt, A. L.; Damm, C. C.; Futch, A. H.; Hiskes, J. R.; Meisenheimer, R. G.; Moir, R. W.; Simonen, T. C.; Stallard, B. W.; Taylor, C. E.

    1976-09-01

    A general survey is presented of surface-related phenomena associated with the following mirror reactor elements: plasma first wall, ion sources, neutral beams, director converters, vacuum systems, and plasma diagnostics. A discussion of surface phenomena in possible abnormal reactor operation is included. Several studies which appear to merit immediate attention and which are essential to the development of mirror reactors are abstracted from the list of recommended areas for surface work. The appendix contains a discussion of the fundamentals of particle/surface interactions. The interactions surveyed are backscattering, thermal desorption, sputtering, diffusion, particle ranges in solids, and surface spectroscopic methods. A bibliography lists references in a number of categories pertinent to mirror reactors. Several complete published and unpublished reports on surface aspects of current mirror plasma experiments and reactor developments are also included.

  20. Mirror reactor surface study

    International Nuclear Information System (INIS)

    Hunt, A.L.; Damm, C.C.; Futch, A.H.; Hiskes, J.R.; Meisenheimer, R.G.; Moir, R.W.; Simonen, T.C.; Stallard, B.W.; Taylor, C.E.

    1976-01-01

    A general survey is presented of surface-related phenomena associated with the following mirror reactor elements: plasma first wall, ion sources, neutral beams, director converters, vacuum systems, and plasma diagnostics. A discussion of surface phenomena in possible abnormal reactor operation is included. Several studies which appear to merit immediate attention and which are essential to the development of mirror reactors are abstracted from the list of recommended areas for surface work. The appendix contains a discussion of the fundamentals of particle/surface interactions. The interactions surveyed are backscattering, thermal desorption, sputtering, diffusion, particle ranges in solids, and surface spectroscopic methods. A bibliography lists references in a number of categories pertinent to mirror reactors. Several complete published and unpublished reports on surface aspects of current mirror plasma experiments and reactor developments are also included

  1. Issues facing the U. S. mirror program

    Energy Technology Data Exchange (ETDEWEB)

    George, T.V.

    1978-07-01

    Some of the current issues associated with the U.S. Magnetic Mirror Program are analyzed. They are presented as five separate papers entitled: (1) Relevant Issues Broughtup by the Mirror Reactor Design Studies. (2) An Assessment of the Design Study of the 1 MeV Neutral Beam Injector Required for a Tandem Mirror Reactor. (3) The Significance of the Radial Plasma Size Measured in Units of Ion Gyroradii in Tandem Mirrors and Field Reversed Mirrors. (4) Producing Field Reversed Mirror Plasmas by Methods used in Field Reversed Theta Pinch. (5) RF Stoppering of Mirror Confined Plasma.

  2. Design of Efficient Mirror Adder in Quantum- Dot Cellular Automata

    Science.gov (United States)

    Mishra, Prashant Kumar; Chattopadhyay, Manju K.

    2018-03-01

    Lower power consumption is an essential demand for portable multimedia system using digital signal processing algorithms and architectures. Quantum dot cellular automata (QCA) is a rising nano technology for the development of high performance ultra-dense low power digital circuits. QCA based several efficient binary and decimal arithmetic circuits are implemented, however important improvements are still possible. This paper demonstrate Mirror Adder circuit design in QCA. We present comparative study of mirror adder cells designed using conventional CMOS technique and mirror adder cells designed using quantum-dot cellular automata. QCA based mirror adders are better in terms of area by order of three.

  3. CMOS circuit design, layout and simulation

    CERN Document Server

    Baker, R Jacob

    2010-01-01

    The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

  4. CMOS Compressed Imaging by Random Convolution

    OpenAIRE

    Jacques, Laurent; Vandergheynst, Pierre; Bibet, Alexandre; Majidzadeh, Vahid; Schmid, Alexandre; Leblebici, Yusuf

    2009-01-01

    We present a CMOS imager with built-in capability to perform Compressed Sensing. The adopted sensing strategy is the random Convolution due to J. Romberg. It is achieved by a shift register set in a pseudo-random configuration. It acts as a convolutive filter on the imager focal plane, the current issued from each CMOS pixel undergoing a pseudo-random redirection controlled by each component of the filter sequence. A pseudo-random triggering of the ADC reading is finally applied to comp...

  5. Storm-associated variations of equatorially mirroring ring current protons, 1--800 keV, at constant first adiabatic invariant

    International Nuclear Information System (INIS)

    Lyons, L.R.; Williams, D.J.

    1976-01-01

    Explorer 45 observations of ring current protons mirroring near the equator, 1--800 keV, are presented at constant first adiabatic invariant μ throughout the period of the December 17, 1971, geomagnetic storm. To obtain μ, simultaneous magnetic field and particle observations are used. Particle deceleration in response to the storm time magnetic field decrease causes ring current measurements viewed at constant energy to underestimate the storm time increase in proton intensities at energies approximately-less-than200 keV. This adiabatic deceleration also accounts for the large flux decreases observed at energies approximately-greater-than200 keV during the storm, in contradiction with previous results (Soraas and Davis, 1968) obtained using a model for the storm time magnetic field

  6. Mirror, mirror on the wall

    CERN Multimedia

    2005-01-01

    RICH 2, one of the two Ring Imaging Cherenkov detectors of the LHCb experiment, is being prepared to join the other detector elements ready for the first proton-proton collisions at LHC. The mirrors of the RICH2 detector are meticulously assembled in a clean room.In a large dark room, men in white move around an immense structure some 7 metres high, 10 metres wide and nearly 2.5 metres deep. Apparently effortlessly, they are installing the two large high-precision spherical mirrors. These mirrors will focus Cherenkov light, created by the charged particles that will traverse this detector, onto the photon detectors. Each spherical mirror wall is made up of facets like a fly's eye. Twenty-eight individual thin glass mirrors will all point to the same point in space to within a few micro-radians. The development of these mirrors has been technically demanding : Ideally they should be massless, sturdy, precise and have high reflectivity. In practice, though not massless, they are made from a mere 6 mm thin gl...

  7. Gasdynamic Mirror Fusion Propulsion Experiment

    Science.gov (United States)

    Emrich, Bill; Rodgers, Stephen L. (Technical Monitor)

    2000-01-01

    A gasdynamic mirror (GDM) fusion propulsion experiment is currently being constructed at the NASA Marshall Space Flight Center (MSFC) to test the feasibility of this particular type of fusion device. Because of the open magnetic field line configuration of mirror fusion devices, they are particularly well suited for propulsion system applications since they allow for the easy ejection of thrust producing plasma. Currently, the MSFC GDM is constructed in three segments. The vacuum chamber mirror segment, the plasma injector mirror segment, and the main plasma chamber segment. Enough magnets are currently available to construct up to three main plasma chamber segments. The mirror segments are also segmented such that they can be expanded to accommodate new end plugging strategies with out requiring the disassembly of the entire mirror segment. The plasma for the experiment is generated in a microwave cavity located between the main magnets and the mirror magnets. Ion heating is accomplished through ambipolar diffusion. The objective of the experiment is to investigate the stability characteristics of the gasdynamic mirror and to map a region of parameter space within which the plasma can be confined in a stable steady state configuration. The mirror ratio, plasma density, and plasma "b" will be varied over a range of values and measurements subsequently taken to determine the degree of plasma stability.

  8. CMOS dot matrix microdisplay

    Science.gov (United States)

    Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

    2011-03-01

    Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

  9. [Mirror neurons].

    Science.gov (United States)

    Rubia Vila, Francisco José

    2011-01-01

    Mirror neurons were recently discovered in frontal brain areas of the monkey. They are activated when the animal makes a specific movement, but also when the animal observes the same movement in another animal. Some of them also respond to the emotional expression of other animals of the same species. These mirror neurons have also been found in humans. They respond to or "reflect" actions of other individuals in the brain and are thought to represent the basis for imitation and empathy and hence the neurobiological substrate for "theory of mind", the potential origin of language and the so-called moral instinct.

  10. CMOS/SOS processing

    Science.gov (United States)

    Ramondetta, P.

    1980-01-01

    Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

  11. Mirror systems.

    Science.gov (United States)

    Fogassi, Leonardo; Ferrari, Pier Francesco

    2011-01-01

    Mirror neurons are a class of visuomotor neurons, discovered in the monkey premotor cortex and in an anatomically connected area of the inferior parietal lobule, that activate both during action execution and action observation. They constitute a circuit dedicated to match actions made by others with the internal motor representations of the observer. It has been proposed that this matching system enables individuals to understand others' behavior and motor intentions. Here we will describe the main features of mirror neurons in monkeys. Then we will present evidence of the presence of a mirror system in humans and of its involvement in several social-cognitive functions, such as imitation, intention, and emotion understanding. This system may have several implications at a cognitive level and could be linked to specific social deficits in humans such as autism. Recent investigations addressed the issue of the plasticity of the mirror neuron system in both monkeys and humans, suggesting also their possible use in rehabilitation. WIREs Cogn Sci 2011 2 22-38 DOI: 10.1002/wcs.89 For further resources related to this article, please visit the WIREs website. Copyright © 2010 John Wiley & Sons, Ltd.

  12. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    International Nuclear Information System (INIS)

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  13. Physics of mirror systems

    International Nuclear Information System (INIS)

    Post, R.F.

    1982-05-01

    In recent years the emphasis in research on the magnetic mirror approach to fusion has been shifted to address what are essentially economically-motivated issues. The introduction of the Tandem Mirror idea solved in principal the problem of low Q (low fusion power gain) of mirror-based fusion systems. In order to optimize the tandem mirror idea from an economic standpoint, some important improvements have been suggested. These improvements include the thermal barrier idea of Baldwin and Logan and the axicell concept of Kesner. These new modifications introduce some special physics considerations. Among these are (1) The MHD stability properties of high energy electron components in the end cells; (2) The optimization of end-cell magnetic field configurations with the objective of minimizing equilibrium parallel currents; (3) The suppression of microstabilities by use of sloshing ion distributions. Following a brief outline of tandem mirror concepts, the above three topics are discussed, with illustrative examples taken from earlier work or from recent design studies

  14. Introduction to tandem mirror physics

    International Nuclear Information System (INIS)

    Kesner, J.; Gerver, M.J.; Lane, B.G.; McVey, B.D.; Catto, P.J.; D'Ippolito, D.A.; Myra, J.R.

    1983-09-01

    This monograph, prepared jointly by the MIT Plasma Fusion Center Mirror Fusion group and SAI, Boulder, Colorado, presents a review of the development of mirror fusion theory from its conception some thirty years ago to the present. Pertinent historic experiments and their contribution are discussed to set the stage for a detailed analysis of current experiments and the problems which remain to be solved in bringing tandem mirror magnetic confinement fusion to fruition. In particular, Chapter III discusses in detail the equilibrium and stability questions which must be dealt with before tandem mirror reactors become feasible, while Chapters IV and V discuss some of the current machines and those under construction which will help to resolve critical issues in both physics and engineering whose solutions are necessary to the commercialization of tandem mirror fusion

  15. What do mirror neurons mirror?

    NARCIS (Netherlands)

    Uithol, S.; Rooij, I.J.E.I. van; Bekkering, H.; Haselager, W.F.G.

    2011-01-01

    Single cell recordings in monkeys provide strong evidence for an important role of the motor system in action understanding. This evidence is backed up by data from studies of the (human) mirror neuron system using neuroimaging or TMS techniques, and behavioral experiments. Although the data

  16. Ultra-low Voltage CMOS Cascode Amplifier

    OpenAIRE

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique.

  17. Ultra-low Voltage CMOS Cascode Amplifier

    DEFF Research Database (Denmark)

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique......, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique....

  18. Mirror systems

    International Nuclear Information System (INIS)

    Howells, M.R.

    1985-12-01

    The physics of VUV and x-ray reflection is reviewed. The main functions of mirrors in synchrotron beamlines are stated briefly and include deflection, filtration, power absorption, formation of a real image of the source, focusing, and collimation. Methods of fabrication of optical surfaces are described. Types of imperfections are discussed, including, aberrations, surface figure inaccuracy, roughness, and degradation due to use. Calculation of the photon beam thermal load, including computer modelling, is considered. 50 refs., 7 figs

  19. A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance

    CSIR Research Space (South Africa)

    Reddy, Reeshen

    2015-04-01

    Full Text Available the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-channel metal-oxide semiconductor (NMOS) cascode and NMOS current source to overcome distortion...

  20. CMOS analog circuit design

    CERN Document Server

    Allen, Phillip E

    1987-01-01

    This text presents the principles and techniques for designing analog circuits to be implemented in a CMOS technology. The level is appropriate for seniors and graduate students familiar with basic electronics, including biasing, modeling, circuit analysis, and some familiarity with frequency response. Students learn the methodology of analog integrated circuit design through a hierarchically-oriented approach to the subject that provides thorough background and practical guidance for designing CMOS analog circuits, including modeling, simulation, and testing. The authors' vast industrial experience and knowledge is reflected in the circuits, techniques, and principles presented. They even identify the many common pitfalls that lie in the path of the beginning designer--expert advice from veteran designers. The text mixes the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, providing the perfect balance.

  1. An investigation into the use of CMOS active pixel technology in image-guided radiotherapy

    International Nuclear Information System (INIS)

    Osmond, J P F; Holland, A D; Harris, E J; Ott, R J; Evans, P M; Clark, A T

    2008-01-01

    The increased intelligence, read-out speed, radiation hardness and potential large size of CMOS active pixel sensors (APS) gives them a potential advantage over systems currently used for verification of complex treatments such as IMRT and the tracking of moving tumours. The aim of this work is to investigate the feasibility of using an APS-based system to image the megavoltage treatment beam produced by a linear accelerator (Linac), and to demonstrate the logic which may ultimately be incorporated into future sensor and FPGA design to evaluate treatment and track motion. A CMOS APS was developed by the MI 3 consortium and incorporated into a megavoltage imaging system using the standard lens and mirror configuration employed in camera-based EPIDs. The ability to resolve anatomical structure was evaluated using an Alderson RANDO head phantom, resolution evaluated using a quality control (QC3) phantom and contrast using an in-house developed phantom. A complex intensity-modulated radiotherapy (IMRT) treatment was imaged and two algorithms were used to determine the field-area and delivered dose, and the position of multi-leaf collimator (MLC) leaves off-line. Results were compared with prediction from the prescription and found to agree within a single image frame time for dose delivery and 0.02-0.03 cm for the position of collimator leaves. Such a system therefore shows potential as the basis for an on-line verification system capable of treatment verification and monitoring patient motion

  2. Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

    OpenAIRE

    Hassan Jassim Motlak

    2015-01-01

    A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to...

  3. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    Science.gov (United States)

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  4. Potential measurements in tandem mirrors

    International Nuclear Information System (INIS)

    Glowienka, J.C.

    1985-11-01

    The US mirror program has begun conducting experiments with a thermal barrier tandem mirror configuration. This configuration requires a specific axial potential profile and implies measurements of potential for documentation and optimization of the configuration. This report briefly outlines the motivation for the thermal barrier tandem mirror and then outlines the techniques used to document the potential profile in conventional and thermal barrier tandem mirrors. Examples of typical data sets from the world's major tandem mirror experiments, TMX and TMX-U at Lawrence Livermore National Laboratory (LLNL) and Gamma 10 at Tsukuba University in Japan, and the current interpretation of the data are discussed together with plans for the future improvement of measurements of plasma potential

  5. CMOS-compatible spintronic devices: a review

    Science.gov (United States)

    Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

    2016-11-01

    For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

  6. Mirror fusion test facility

    International Nuclear Information System (INIS)

    Post, R.F.

    1978-01-01

    The MFTF is a large new mirror facility under construction at Livermore for completion in 1981--82. It represents a scaleup, by a factor of 50 in plasma volume, a factor of 5 or more in ion energy, and a factor of 4 in magnetic field intensity over the Livermore 2XIIB experiment. Its magnet, employing superconducting NbTi windings, is of Yin-Yang form and will weigh 200 tons. MFTF will be driven by neutral beams of two levels of current and energy: 1000 amperes of 20 keV (accelerating potential) pulsed beams for plasma startup; 750 amperes of 80 keV beams of 0.5 second duration for temperature buildup and plasma sustainment. Two operating modes for MFTF are envisaged: The first is operation as a conventional mirror cell with n/sup tau/ approximately equal to 10 12 cm -3 sec, W/sub i/ = 50 keV, where the emphasis will be on studying the physics of mirror cells, particularly the issues of improved techniques of stabilization against ion cyclotron modes and of maximization of the electron temperature. The second possible mode is the further study of the Field Reversed Mirror idea, using high current neutral beams to sustain the field-reversed state. Anticipating success in the coming Livermore Tandem Mirror Experiment (TMX) MFTF has been oriented so that it could comprise one end cell of a scaled up TM experiment. Also, if MFTF were to succeed in achieving a FR state it could serve as an essentially full-sized physics prototype of one cell of a FRM fusion power plant

  7. The CMOS Integration of a Power Inverter

    OpenAIRE

    Mannarino, Eric Francis

    2016-01-01

    Due to their falling costs, the use of renewable energy systems is expanding around the world. These systems require the conversion of DC power into grid-synchronous AC power. Currently, the inverters that carry out this task are built using discrete transistors. TowerJazz Semiconductor Corp. has created a commercial CMOS process that allows for blocking voltages of up to 700 V, effectively removing the barrier to integrating power inverters onto a single chip. This thesis explores this proce...

  8. An Analytical Model for Spectral Peak Frequency Prediction of Substrate Noise in CMOS Substrates

    DEFF Research Database (Denmark)

    Shen, Ming; Mikkelsen, Jan H.

    2013-01-01

    This paper proposes an analytical model describing the generation of switching current noise in CMOS substrates. The model eliminates the need for SPICE simulations in existing methods by conducting a transient analysis on a generic CMOS inverter and approximating the switching current waveform us...

  9. Structured Analog CMOS Design

    CERN Document Server

    Stefanovic, Danica

    2008-01-01

    Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The proposed transistor-level design procedure is based on the EKV modeling approach and relies on the device inversion level as a fundament

  10. Mirror agnosia and the mirrored-self misidentification delusion: a hypnotic analogue.

    Science.gov (United States)

    Connors, Michael H; Cox, Rochelle E; Barnier, Amanda J; Langdon, Robyn; Coltheart, Max

    2012-05-01

    Mirrored-self misidentification is the delusional belief that one's reflection in the mirror is a stranger. Current theories suggest that one pathway to the delusion is mirror agnosia (a deficit in which patients are unable to use mirror knowledge when interacting with mirrors). This study examined whether a hypnotic suggestion for mirror agnosia can recreate features of the delusion. Ten high hypnotisable participants were given either a suggestion to not understand mirrors or to see the mirror as a window. Participants were asked to look into a mirror and describe what they saw. Participants were tested on their understanding of mirrors and received a series of challenges. Participants then received a detailed postexperimental inquiry. Three of five participants given the suggestion to not understand mirrors reported seeing a stranger and maintained this belief when challenged. These participants also showed signs of mirror agnosia. No participants given the suggestion to see a window reported seeing a stranger. Results indicate that a hypnotic suggestion for mirror agnosia can be used to recreate the mirrored-self misidentification delusion. Factors influencing the effectiveness of hypnotic analogues of psychopathology, such as participants' expectations and interpretations, are discussed.

  11. E-Beam Effects on CMOS Active Pixel Sensors

    International Nuclear Information System (INIS)

    Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

    2011-01-01

    Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

  12. An eight channel low-noise CMOS readout circuit for silicon detectors with on-chip front-end FET

    International Nuclear Information System (INIS)

    Fiorini, C.; Porro, M.

    2006-01-01

    We propose a CMOS readout circuit for the processing of signals from multi-channel silicon detectors to be used in X-ray spectroscopy and γ-ray imaging applications. The circuit is composed by eight channels, each one featuring a low-noise preamplifier, a 6th-order semigaussian shaping amplifier with four selectable peaking times, from 1.8 up to 6 μs, a peak stretcher and a discriminator. The circuit is conceived to be used with silicon detectors with a front-end FET integrated on the detector chips itself, like silicon drift detectors with JFET and pixel detectors with DEPMOS. The integrated time constants used for the shaping are implemented by means of an RC-cell, based on the technique of demagnification of the current flowing in a resistor R by means of the use of current mirrors. The eight analog channels of the chip are multiplexed to a single analog output. A suitable digital section provides self-resetting of each channel and trigger output and is able to set independent thresholds on the analog channels by means of a programmable serial register and 3-bit DACs. The circuit has been realized in the 0.35 μm CMOS AMS technology. In this work, the main features of the circuit are presented along with the experimental results of its characterization

  13. A CMOS Morlet Wavelet Generator

    Directory of Open Access Journals (Sweden)

    A. I. Bautista-Castillo

    2017-04-01

    Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

  14. Proton and gamma -Rays Irradiation-Induced Dark Current Random Telegraph Signal in a 0.18-mu{{m}} CMOS Image Sensor

    Science.gov (United States)

    Martin, E.; Nuns, T.; Virmontois, C.; David, J.-P.; Gilard, O.

    2013-08-01

    The dark current random telegraph signal (RTS) behavior has been studied in a five-transistor-per-pixel (5T) pinned photodiode 0.18-μm COTS active pixel sensor (APS). Several devices, irradiated using protons and gamma rays, have been studied in order to assess the ionizing and displacement damage effects. The influence of the proton energy, fluence, ionizing dose and applied bias during irradiation on the number of RTS pixels, the number of discrete levels, maximum transition amplitude, and mean switching time constants is investigated.

  15. Materials Characterization of CIGS solar cells on Top of CMOS chips

    NARCIS (Netherlands)

    Lu, J.; Liu, W.; Kovalgin, A.Y.; Sun, Y.; Schmitz, J.; Venkatasubramanian, R.; Radousky, H.; Liang, H.

    2011-01-01

    In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement

  16. Two CMOS BGR using CM and DTMOST techniques

    International Nuclear Information System (INIS)

    Mohd-Yasin, F.; Teh, Y.K.; Choong, F.; Reaz, M.B.I.

    2009-06-01

    Two CMOS BGR using current mode (0.044mm 2 ) and Dynamic Threshold MOST (0.017mm 2 ) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating V DD 1.28V at 25 o C; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support V DD range up to 4V required by passive UHF RFID. (author)

  17. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    CERN Document Server

    Bronuzzi, J.; Moll, M.; Sallese, J.M.

    2016-01-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set ...

  18. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    International Nuclear Information System (INIS)

    Bronuzzi, J.; Mapelli, A.; Moll, M.; Sallese, J.M.

    2016-01-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set in full depletion. In a first step, Synopsys Sentaurus TCAD is used to evaluate the soundness of this technique for interface traps characterization such as it may happen in bonded interfaces. Next, an analytical model is developed in details to give a better insight into the physics behind the TCT for interface layers. Further, this can be used as a simple tool to evidence what are the relevant parameters influencing the TCT signal and to set the basis for preliminary characterizations.

  19. VLSI scaling methods and low power CMOS buffer circuit

    International Nuclear Information System (INIS)

    Sharma Vijay Kumar; Pattanaik Manisha

    2013-01-01

    Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

  20. Electromagnetic Investigation of a CMOS MEMS Inductive Microphone

    Directory of Open Access Journals (Sweden)

    Farès TOUNSI

    2009-09-01

    Full Text Available This paper presents a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone. We have shown, that the use of an alternative current (AC in the primary fixed inductor results in a substantially higher induced voltage in the secondary inductor comparing to the case when a direct current (DC is used. The expected increase of the induced voltage can be expressed by a voltage ratio of AC and DC solutions that is in the range of 3 to 6. A prototype fabrication of this microphone has been realized using a combination of standard CMOS 0.6 µm process with a CMOS-compatible post-process consisting in a bulk micromachining technology. The output voltage of the electrodynamic microphone that achieves the µV range can be increased by the use of the symmetric dual-layer spiral inductor structure.

  1. Current trends in laser fusion driver and beam combination laser system using stimulated Brillouin scattering phase conjugate mirrors for a fusion driver

    International Nuclear Information System (INIS)

    Kong, Hong Jin

    2008-01-01

    Laser fusion energy (LFE) is well known as one of the promising sources if clean energy for mankind. Laser fusion researches have been actively progressed, since Japan and the Soviet Union as well as USA developed ultrahigh power lasers at the beginning of 1970s. At present in USA, NIF (National Ignition Facility), which is the largest laser fusion facility in the world, is under construction and will be completed in 2008. Japan as a leader of the laser fusion research has developed a high energy and high power laser system, Gekko XII, and is under contemplation of FIREX projects for the fast ignition. China also has SG I, II lasers for performing the fusion research, and SG III is under construction as a next step. France is also constructing LMJ (Laser countries, many other developed countries in Europe, such as Russia, Germany, UK, and so on, have their own high energy laser systems for the fusion research. In Korea, the high power laser development started with SinMyung laser in KAIST in 1994, and KLF (KAERI Laser Facility) of KAERI was recently completed in 2007. For the practical use of laser fusion energy, the laser driver should be operated with a high repetition rate around 10Hz. Yet, current high energy laser systems, Such as NIF, Gekko XII, and etc., can be operated with only several shots per day. Some researchers have developed their own techniques to reduce the thermal loads of the laser material, by using laser diodes as pump sources and ceramic laser materials with high thermal energy scaling up for the real fusion driver. For this reason, H. J. Kong et al. proposed the beam combination laser system using stimulated Brillouin scattering phase conjugate mirrors (SBS PCMs) for a fusion driver. Proposed beam combination has many advantages for energy scaling up; it is composed by simple optical systems with small amount of components, there is no interaction between neighbored sub beams, the SBS PCMs can be used for a high energy beam reflection with

  2. SU-F-T-434: Development of a Fan-Beam Optical Scanner Using CMOS Array for Small Field Dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Brost, E; Warmington, L; Watanabe, Y [Department of Radiation Oncology, University of Minnesota, Minneapolis, MN (United States); Senthilkumar, S [Department of Physics, Vel Tech University, Chennai (India); Departamento de Ingeneria Fisica, DCI, Universidad de Guanajuato, Campus Leon, Guanajuato (Mexico)

    2016-06-15

    Purpose: To design and construct a second generation optical computed tomography (OCT) system using a fan-beam with a CMOS array detector for the 3D dosimetry with polymer gel and radiochromic solid dosimeters. The system was specifically designed for the small field dosimetry. Methods: The optical scanner used a fan-beam laser, which was produced from a collimated red laser beam (λ=620 nm) with a 15-degree laser-line generating lens. The fan-beam was sent through an index-matching bath which holds the sample stage and a sample. The emerging laser light was detected with a 2.54 cm-long CMOS array detector (512 elements). The sample stage rotated through the full 360 degree projection angles at 0.9-degree increments. Each projection was normalized to the unirradiated sample at the projection angle to correct for imperfections in the dosimeter. A larger sample could be scanned by using a motorized mirror and linearly translating the CMOS detector. The height of the sample stage was varied for a full 3D scanning. The image acquisition and motor motion was controlled by a computer. The 3D image reconstruction was accomplished by a fan-beam reconstruction algorithm. All the software was developed inhouse with MATLAB. Results: The scanner was used on both PRESAGE and PAGAT gel dosimeters. Irreconcilable refraction errors were seen with PAGAT because the fan beam laser line refracted away from the detector when the field was highly varying in 3D. With PRESAGE, this type of error was not seen. Conclusion: We could acquire tomographic images of dose distributions by the new OCT system with both polymer gel and radiochromic solid dosimeters. Preliminary results showed that the system was more suited for radiochromic solid dosimeters since the radiochromic dosimeters exhibited minimal refraction and scattering errors. We are currently working on improving the image quality by thorough characterization of the OCT system.

  3. SU-F-T-434: Development of a Fan-Beam Optical Scanner Using CMOS Array for Small Field Dosimetry

    International Nuclear Information System (INIS)

    Brost, E; Warmington, L; Watanabe, Y; Senthilkumar, S

    2016-01-01

    Purpose: To design and construct a second generation optical computed tomography (OCT) system using a fan-beam with a CMOS array detector for the 3D dosimetry with polymer gel and radiochromic solid dosimeters. The system was specifically designed for the small field dosimetry. Methods: The optical scanner used a fan-beam laser, which was produced from a collimated red laser beam (λ=620 nm) with a 15-degree laser-line generating lens. The fan-beam was sent through an index-matching bath which holds the sample stage and a sample. The emerging laser light was detected with a 2.54 cm-long CMOS array detector (512 elements). The sample stage rotated through the full 360 degree projection angles at 0.9-degree increments. Each projection was normalized to the unirradiated sample at the projection angle to correct for imperfections in the dosimeter. A larger sample could be scanned by using a motorized mirror and linearly translating the CMOS detector. The height of the sample stage was varied for a full 3D scanning. The image acquisition and motor motion was controlled by a computer. The 3D image reconstruction was accomplished by a fan-beam reconstruction algorithm. All the software was developed inhouse with MATLAB. Results: The scanner was used on both PRESAGE and PAGAT gel dosimeters. Irreconcilable refraction errors were seen with PAGAT because the fan beam laser line refracted away from the detector when the field was highly varying in 3D. With PRESAGE, this type of error was not seen. Conclusion: We could acquire tomographic images of dose distributions by the new OCT system with both polymer gel and radiochromic solid dosimeters. Preliminary results showed that the system was more suited for radiochromic solid dosimeters since the radiochromic dosimeters exhibited minimal refraction and scattering errors. We are currently working on improving the image quality by thorough characterization of the OCT system.

  4. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2003-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0...

  5. Large area CMOS image sensors

    International Nuclear Information System (INIS)

    Turchetta, R; Guerrini, N; Sedgwick, I

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  6. Absorbed dose by a CMOS in radiotherapy

    International Nuclear Information System (INIS)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

    2011-10-01

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  7. Demonstration of Inexact Computing Implemented in the JPEG Compression Algorithm using Probabilistic Boolean Logic applied to CMOS Components

    Science.gov (United States)

    2015-12-24

    manufacturing today (namely, the 14nm FinFET silicon CMOS technology). The JPEG algorithm is selected as a motivational example since it is widely...TIFF images of a U.S. Air Force F-16 aircraft provided by the University of Southern California Signal and Image Processing Institute (SIPI) image...silicon CMOS technology currently in high volume manufac- turing today (the 14 nm FinFET silicon CMOS technology). The main contribution of this

  8. The total dose effects on the 1/f noise of deep submicron CMOS transistors

    International Nuclear Information System (INIS)

    Hu Rongbin; Wang Yuxin; Lu Wu

    2014-01-01

    Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO 2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion. (semiconductor devices)

  9. CMOS latch-up analysis and prevention

    International Nuclear Information System (INIS)

    Shafer, B.D.

    1975-06-01

    An analytical model is presented which develops relationships between ionization rates, minority carrier lifetimes, and latch-up in bulk CMOS integrated circuits. The basic mechanism for latch-up is the SCR action reported by Gregory and Shafer. The SCR is composed of a vertical NPN transistor formed by the N-channel source diffusion, the P-Well, and the N-substrate. The second part of the SCR is the lateral PNP transistor made up of the P-channel source diffusion, the N-substrate, and P-Well. It is shown that the NPN transistor turns on due to photocurrent-induced lateral voltage drops in the base of the transistor. The gain of this double diffused transistor has been shown to be as high as 100. Therefore, the transistor action of this device produces a much larger current flow in the substrate. This transistor current adds to that produced by the P-Well diode photocurrent in the substrate. It is found that the combined flow of current in the substrate forward biases the base emitter junction of the PNP device long before this could occur due to the P-Well photocurrent alone. The analysis indicated that a CD4007A CMOS device biased in the normal mode of operation should latch at about 2 . 10 8 rads/sec. Experimental results produced latch-up at 1 to 3 . 10 8 rads/sec. (U.S.)

  10. Mirror Neurons and Mirror-Touch Synesthesia.

    Science.gov (United States)

    Linkovski, Omer; Katzin, Naama; Salti, Moti

    2016-05-30

    Since mirror neurons were introduced to the neuroscientific community more than 20 years ago, they have become an elegant and intuitive account for different cognitive mechanisms (e.g., empathy, goal understanding) and conditions (e.g., autism spectrum disorders). Recently, mirror neurons were suggested to be the mechanism underlying a specific type of synesthesia. Mirror-touch synesthesia is a phenomenon in which individuals experience somatosensory sensations when seeing someone else being touched. Appealing as it is, careful delineation is required when applying this mechanism. Using the mirror-touch synesthesia case, we put forward theoretical and methodological issues that should be addressed before relying on the mirror-neurons account. © The Author(s) 2016.

  11. Topological mirror superconductivity.

    Science.gov (United States)

    Zhang, Fan; Kane, C L; Mele, E J

    2013-08-02

    We demonstrate the existence of topological superconductors (SCs) protected by mirror and time-reversal symmetries. D-dimensional (D=1, 2, 3) crystalline SCs are characterized by 2(D-1) independent integer topological invariants, which take the form of mirror Berry phases. These invariants determine the distribution of Majorana modes on a mirror symmetric boundary. The parity of total mirror Berry phase is the Z(2) index of a class DIII SC, implying that a DIII topological SC with a mirror line must also be a topological mirror SC but not vice versa and that a DIII SC with a mirror plane is always time-reversal trivial but can be mirror topological. We introduce representative models and suggest experimental signatures in feasible systems. Advances in quantum computing, the case for nodal SCs, the case for class D, and topological SCs protected by rotational symmetries are pointed out.

  12. Temperature Sensors Integrated into a CMOS Image Sensor

    NARCIS (Netherlands)

    Abarca Prouza, A.N.; Xie, S.; Markenhof, Jules; Theuwissen, A.J.P.

    2017-01-01

    In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is needed. The test image sensor consists of

  13. CMOS Integrated Carbon Nanotube Sensor

    International Nuclear Information System (INIS)

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-01-01

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  14. Monolithic CMOS imaging x-ray spectrometers

    Science.gov (United States)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  15. Mirror machine reactors

    International Nuclear Information System (INIS)

    Carlson, G.A.; Moir, R.W.

    1976-01-01

    Recent mirror reactor conceptual design studies are described. Considered in detail is the design of ''standard'' Yin-Yang fusion power reactors with classical and enhanced confinement. It is shown that to be economically competitive with estimates for other future energy sources, mirror reactors require a considerable increase in Q, or major design simplifications, or preferably both. These improvements may require a departure from the ''standard'' configuration. Two attractive possibilities, both of which would use much of the same physics and technology as the ''standard'' mirror, are the field reversed mirror and the end-stoppered mirror

  16. The mirror neuron system.

    Science.gov (United States)

    Cattaneo, Luigi; Rizzolatti, Giacomo

    2009-05-01

    Mirror neurons are a class of neurons, originally discovered in the premotor cortex of monkeys, that discharge both when individuals perform a given motor act and when they observe others perform that same motor act. Ample evidence demonstrates the existence of a cortical network with the properties of mirror neurons (mirror system) in humans. The human mirror system is involved in understanding others' actions and their intentions behind them, and it underlies mechanisms of observational learning. Herein, we will discuss the clinical implications of the mirror system.

  17. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  18. Technology of mirror machines: LLL facilities for magnetic mirror fusion experiments

    International Nuclear Information System (INIS)

    Batzer, T.H.

    1977-01-01

    Significant progress in plasma confinement and temperature has been achieved in the 2XIIB facility at Livermore. These encouraging results, and their theoretical corroboration, have provided a firm basis for the design of a new generation of magnetic mirror experiments, adding support to the mirror concept of a fusion reactor. Two new mirror experiments have been proposed to succeed the currently operating 2XIIB facility. The first of these called TMX (Tandem Mirror Experiment) has been approved and is currently under construction. TMX is designed to utilize the intrinsic positive plasma potential of two strong, and relatively small, minimum B mirror cells to enhance the confinement of a much larger, magnetically weaker, centrally-located mirror cell. The second facility, MFTF (Mirror Fusion Test Facility), is currently in preliminary design with line item approval anticipated for FY 78. MFTF is designed primarily to exploit the experimental and theoretical results derived from 2XIIB. Beyond that, MFTF will develop the technology for the transition from the present small mirror experiments to large steady-state devices such as the mirror FERF/FTR. The sheer magnitude of the plasma volume, magnetic field, neutral beam power, and vacuum pumping capacity, particularly in the case of MFTF, has placed new and exciting demands on engineering technology. An engineering overview of MFTF, TMX, and associated MFE activities at Livermore will be presented

  19. Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

    Science.gov (United States)

    Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

    2017-12-01

    With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

  20. Analysis of the resistive network in a bio-inspired CMOS vision chip

    Science.gov (United States)

    Kong, Jae-Sung; Sung, Dong-Kyu; Hyun, Hyo-Young; Shin, Jang-Kyoo

    2007-12-01

    CMOS vision chips for edge detection based on a resistive circuit have recently been developed. These chips help develop neuromorphic systems with a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends dominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the MOSFET for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160×120 CMOS vision chips have been fabricated by using a standard CMOS technology. The experimental results have been nicely matched with our prediction.

  1. The review of radiation effects of γ total dose in CMOS circuits

    International Nuclear Information System (INIS)

    Chen Panxun; Gao Wenming; Xie Zeyuan; Mi Bang

    1992-01-01

    Radiation performances of commercial and rad-hard CMOS circuits are reviewed. Threshold voltage, static power current, V in -V out characteristic and propagation delay time related with total dose are presented for CMOS circuits from several manufacturing processes. The performance of radiation-annealing of experimental circuits had been observed for two years. The comparison has been made between the CMOS circuits made in China and the commercial RCA products. 60 Co γ source can serve as γ simulator of the nuclear explosion

  2. An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

    Directory of Open Access Journals (Sweden)

    Mohammad Reza Shokrani

    2014-01-01

    Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  3. Magnetic mirrors: history, results, and future prospects

    International Nuclear Information System (INIS)

    Beklemishev, A.D.; Ivanov, A.A.; Kruglyakov, E.P.; Burdakov, A.V.; Ivanov, A.A.; Beklemishev, A.D.; Ivanov, A.A.; Burdakov, A.V.

    2012-01-01

    The evolution of open traps brought them from simple solenoids to highly sophisticated and huge tandem mirrors with quadrupole magnetic stabilizers. They tried to compete with toroidal devices using ambipolar confinement and thermal barriers, but were too late and failed, and are almost extinct. A side branch of open traps went for simplicity and good fast-ion confinement inherent in axially symmetric mirrors. Since simplicity means lower cost of construction and servicing, and lower engineering and materials demands, such type of traps might still have an edge. Axially symmetric mirrors at the Budker Institute of Nuclear Physics in Novosibirsk currently represent the front line of mirror research. We discuss recent experimental results from the multiple-mirror trap, GOL-3, and the gas-dynamic trap, GDT. The next step in this line of research is the GDMT program that will combine the GDT-style fast-ion-dominated central mirror with multiple-mirror end plugs. This superconducting device will be modular and built in stages. The first stage, GDMT-T, will be based on 5m, 7T superconducting solenoid (multiple-mirror plug of the full device). Its 3-year scientific program is oriented primarily on PMI studies.

  4. A BiCMOS Binary Hysteresis Chaos Generator

    Science.gov (United States)

    Ahmadi, S.; Newcomb, R. W.

    A previous op-amp RC circuit which was proven to give chaotic signals is converted to a BiCMOS design more suitable to integrated circuit realization. The structure results from a degree two differential equation which includes binary hysteresis as its nonlinearity. The circuit is realized by differential (voltage to current) pairs feeding two capacitors, which carry the dynamics, with the key component being a (voltage to current) binary hysteresis circuit due to Linares.

  5. Photon detection with CMOS sensors for fast imaging

    International Nuclear Information System (INIS)

    Baudot, J.; Dulinski, W.; Winter, M.; Barbier, R.; Chabanat, E.; Depasse, P.; Estre, N.

    2009-01-01

    Pixel detectors employed in high energy physics aim to detect single minimum ionizing particle with micrometric positioning resolution. Monolithic CMOS sensors succeed in this task thanks to a low equivalent noise charge per pixel of around 10 to 15 e - , and a pixel pitch varying from 10 to a few 10 s of microns. Additionally, due to the possibility for integration of some data treatment in the sensor itself, readout times of 100μs have been reached for 100 kilo-pixels sensors. These aspects of CMOS sensors are attractive for applications in photon imaging. For X-rays of a few keV, the efficiency is limited to a few % due to the thin sensitive volume. For visible photons, the back-thinned version of CMOS sensor is sensitive to low intensity sources, of a few hundred photons. When a back-thinned CMOS sensor is combined with a photo-cathode, a new hybrid detector results (EBCMOS) and operates as a fast single photon imager. The first EBCMOS was produced in 2007 and demonstrated single photon counting with low dark current capability in laboratory conditions. It has been compared, in two different biological laboratories, with existing CCD-based 2D cameras for fluorescence microscopy. The current EBCMOS sensitivity and frame rate is comparable to existing EMCCDs. On-going developments aim at increasing this frame rate by, at least, an order of magnitude. We report in conclusion, the first test of a new CMOS sensor, LUCY, which reaches 1000 frames per second.

  6. CMOS-based avalanche photodiodes for direct particle detection

    International Nuclear Information System (INIS)

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

  7. Small mirror fusion reactors

    International Nuclear Information System (INIS)

    Carlson, G.A.; Schultz, K.R.; Smith, A.C. Jr.

    1978-01-01

    Basic requirements for the pilot plants are that they produce a net product and that they have a potential for commercial upgrade. We have investigated a small standard mirror fusion-fission hybrid, a two-component tandem mirror hybrid, and two versions of a field-reversed mirror fusion reactor--one a steady state, single cell reactor with a neutral beam-sustained plasma, the other a moving ring field-reversed mirror where the plasma passes through a reaction chamber with no energy addition

  8. Neutron absorbed dose in a pacemaker CMOS

    International Nuclear Information System (INIS)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

    2012-01-01

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

  9. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2012-06-15

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

  10. CMOS test and evaluation a physical perspective

    CERN Document Server

    Bhushan, Manjul

    2015-01-01

    This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

  11. Terahertz adaptive optics with a deformable mirror.

    Science.gov (United States)

    Brossard, Mathilde; Sauvage, Jean-François; Perrin, Mathias; Abraham, Emmanuel

    2018-04-01

    We report on the wavefront correction of a terahertz (THz) beam using adaptive optics, which requires both a wavefront sensor that is able to sense the optical aberrations, as well as a wavefront corrector. The wavefront sensor relies on a direct 2D electro-optic imaging system composed of a ZnTe crystal and a CMOS camera. By measuring the phase variation of the THz electric field in the crystal, we were able to minimize the geometrical aberrations of the beam, thanks to the action of a deformable mirror. This phase control will open the route to THz adaptive optics in order to optimize the THz beam quality for both practical and fundamental applications.

  12. CMOS Analog IC Design: Fundamentals

    OpenAIRE

    Bruun, Erik

    2018-01-01

    This book is intended for use as the main textbook for an introductory course in CMOS analog integrated circuit design. It is aimed at electronics engineering students who have followed basic courses in mathematics, physics, circuit theory, electronics and signal processing. It takes the students directly from a basic level to a level where they can start working on simple analog IC design projects or continue their studies using more advanced textbooks in the field. A distinct feature of thi...

  13. Hybrid Josephson-CMOS memory: a solution for the Josephson memory problem

    International Nuclear Information System (INIS)

    Duzer, Theodore van; Feng Yijun; Meng Xiaofan; Whiteley, Stephen R; Yoshikawa, Nobuyuki

    2002-01-01

    The history of the development of superconductive memory for Josephson digital systems is presented along with the several current proposals. The main focus is on a proposed combination of the highly developed CMOS memory technology with Josephson peripheral circuits to achieve memories of significant size with subnanosecond access time. Background material is presented on the cryogenic operation of CMOS. Simulations and experiments on components of memory with emphasis on the important input interface amplifier are presented

  14. High-voltage CMOS detectors

    International Nuclear Information System (INIS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-01-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  15. High-voltage CMOS detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

    2016-07-11

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  16. CMOS optimization for radiation hardness

    International Nuclear Information System (INIS)

    Derbenwick, G.F.; Fossum, J.G.

    1975-01-01

    Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

  17. Absorbed dose by a CMOS in radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  18. Microelectronic test structures for CMOS technology

    CERN Document Server

    Ketchen, Mark B

    2011-01-01

    Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

  19. The CMOS integration of a power inverter

    Science.gov (United States)

    Mannarino, Eric Francis

    Due to their falling costs, the use of renewable energy systems is expanding around the world. These systems require the conversion of DC power into grid-synchronous AC power. Currently, the inverters that carry out this task are built using discrete transistors. TowerJazz Semiconductor Corp. has created a commercial CMOS process that allows for blocking voltages of up to 700 V, effectively removing the barrier to integrating power inverters onto a single chip. This thesis explores this process using two topologies. The first is a cell-based switched-capacitor topology first presented by Ke Zou. The second is a novel topology that explores the advantage of using a bused input-output system, as in digital electronics. Simulations run on both topologies confirm the high-efficiency demonstrated in Zou’s process as well as the advantage the bus-based system has in output voltage levels.

  20. Bronze rainbow hologram mirrors

    Science.gov (United States)

    Dawson, P.

    2006-02-01

    This project draws on holographic embossing techniques, ancient artistic conventions of bronze mirror design and modelling and casting processes to accomplish portraiture of reflection. Laser scanning, 3D computer graphics and holographic imaging are employed to enable a permanent 3D static holographic image to appear integrated with the real-time moving reflection of a viewer's face in a polished bronze disc. The disc and the figure which holds it (caryatid) are cast in bronze from a lost wax model, a technique which has been used for millennia to make personal mirrors. The Caryatid form of bronze mirror which went through many permutations in ancient Egyptian, Greece and Rome shows a plethora of expressive figure poses ranging from sleek nudes to highly embellished multifigure arrangements. The prototype of this series was made for Australian choreographer Graeme Murphy, Artistic Director of the Sydney Dance Company. Each subsequent mirror will be unique in figure and holographic imagery as arranged between artist and subject. Conceptually this project references both the modern experience of viewing mirrors retrieved from ancient tombs, which due to deterioration of the surface no longer reflect, and the functioning of Chinese Magic mirrors, which have the ability to project a predetermined image. Inspired by the metaphorical potential of these mirrors, which do not reflect the immediate reality of the viewer, this bronze hologram mirror series enables each viewer to reflect upon himself or herself observing simultaneously the holographic image and their own partially obliterated reflection.

  1. Mirror fusion reactor design

    International Nuclear Information System (INIS)

    Neef, W.S. Jr.; Carlson, G.A.

    1979-01-01

    Recent conceptual reactor designs based on mirror confinement are described. Four components of mirror reactors for which materials considerations and structural mechanics analysis must play an important role in successful design are discussed. The reactor components are: (a) first-wall and thermal conversion blanket, (b) superconducting magnets and their force restraining structure, (c) neutral beam injectors, and (d) plasma direct energy converters

  2. Contact CMOS imaging of gaseous oxygen sensor array.

    Science.gov (United States)

    Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

    2011-10-01

    We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

  3. Tandem mirror plasma confinement apparatus

    International Nuclear Information System (INIS)

    Fowler, T.K.

    1978-01-01

    Apparatus and method are described for confining a plasma in a center mirror cell by use of two end mirror cells as positively charged end stoppers to minimize leakage of positive particles from the ends of the center mirror cell

  4. Tandem mirror plasma confinement apparatus

    Science.gov (United States)

    Fowler, T. Kenneth

    1978-11-14

    Apparatus and method for confining a plasma in a center mirror cell by use of two end mirror cells as positively charged end stoppers to minimize leakage of positive particles from the ends of the center mirror cell.

  5. PERFORMANCE OF LEAKAGE POWER MINIMIZATION TECHNIQUE FOR CMOS VLSI TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    T. Tharaneeswaran

    2012-06-01

    Full Text Available Leakage power of CMOS VLSI Technology is a great concern. To reduce leakage power in CMOS circuits, a Leakage Power Minimiza-tion Technique (LPMT is implemented in this paper. Leakage cur-rents are monitored and compared. The Comparator kicks the charge pump to give body voltage (Vbody. Simulations of these circuits are done using TSMC 0.35µm technology with various operating temper-atures. Current steering Digital-to-Analog Converter (CSDAC is used as test core to validate the idea. The Test core (eg.8-bit CSDAC had power consumption of 347.63 mW. LPMT circuit alone consumes power of 6.3405 mW. This technique results in reduction of leakage power of 8-bit CSDAC by 5.51mW and increases the reliability of test core. Mentor Graphics ELDO and EZ-wave are used for simulations.

  6. CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

    Science.gov (United States)

    Rimoldi, M.

    2017-12-01

    The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detectors based on CMOS technology. Such detectors can provide charge collection, analog amplification and digital processing in the same silicon wafer. The radiation hardness is improved thanks to multiple nested wells which give the embedded CMOS electronics sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC . A number of alternative solutions have been explored and characterised. In this document, test results of the sensors fabricated in different CMOS processes are reported.

  7. Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

    Science.gov (United States)

    Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

    2005-04-01

    We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

  8. Mirror boxes and mirror mounts for photophysics beamline

    International Nuclear Information System (INIS)

    Raja Rao, P.M.; Raja Sekhar, B.N.; Das, N.C.; Khan, H.A.; Bhattacharya, S.S.; Roy, A.P.

    1996-01-01

    Photophysics beamline makes use of one metre Seya-Namioka monochromator and two toroidal mirrors in its fore optics. The first toroidal mirror (pre mirror) focuses light originating from the tangent point of the storage ring onto the entrance slit of the monochromator and second toroidal mirror (post mirror) collects light from the exit slit of the monochromator and focuses light onto the sample placed at a distance of about one metre away from the 2nd mirror. To steer light through monochromator and to focus it on the sample of 1mm x 1mm size require precision rotational and translational motion of the mirrors and this has been achieved with the help of precision mirror mounts. Since Indus-1 operates at pressures less than 10 -9 m.bar, the mirror mounts should be manipulated under similar ultra high vacuum conditions. Considering these requirements, two mirror boxes and two mirror mounts have been designed and fabricated. The coarse movements to the mirrors are imparted from outside the mirror chamber with the help of x-y tables and precision movements to the mirrors are achieved with the help of mirror mounts. The UHV compatibility and performance of the mirror mounts connected to mirror boxes under ultra high vacuum condition is evaluated. The details of the design, fabrication and performance evaluation are discussed in this report. 5 refs., 9 figs., 1 tab

  9. JPL CMOS Active Pixel Sensor Technology

    Science.gov (United States)

    Fossum, E. R.

    1995-01-01

    This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

  10. Classical mirror symmetry

    CERN Document Server

    Jinzenji, Masao

    2018-01-01

    This book furnishes a brief introduction to classical mirror symmetry, a term that denotes the process of computing Gromov–Witten invariants of a Calabi–Yau threefold by using the Picard–Fuchs differential equation of period integrals of its mirror Calabi–Yau threefold. The book concentrates on the best-known example, the quintic hypersurface in 4-dimensional projective space, and its mirror manifold. First, there is a brief review of the process of discovery of mirror symmetry and the striking result proposed in the celebrated paper by Candelas and his collaborators. Next, some elementary results of complex manifolds and Chern classes needed for study of mirror symmetry are explained. Then the topological sigma models, the A-model and the B-model, are introduced. The classical mirror symmetry hypothesis is explained as the equivalence between the correlation function of the A-model of a quintic hyper-surface and that of the B-model of its mirror manifold. On the B-model side, the process of construct...

  11. A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

    Science.gov (United States)

    Wallace, Robert M.

    2001-03-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  12. Hybrid CMOS/Molecular Integrated Circuits

    Science.gov (United States)

    Stan, M. R.; Rose, G. S.; Ziegler, M. M.

    CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

  13. Optoelectronic circuits in nanometer CMOS technology

    CERN Document Server

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  14. Mirror plasma apparatus

    International Nuclear Information System (INIS)

    Moir, R.W.

    1981-01-01

    A mirror plasma apparatus which utilizes shielding by arc discharge to form a blanket plasma and lithium walls to reduce neutron damage to the wall of the apparatus. An embodiment involves a rotating liquid lithium blanket for a tandem mirror plasma apparatus wherein the first wall of the central mirror cell is made of liquid lithium which is spun with angular velocity great enough to keep the liquid lithium against the first material wall, a blanket plasma preventing the lithium vapor from contaminating the plasma

  15. CMOS foveal image sensor chip

    Science.gov (United States)

    Bandera, Cesar (Inventor); Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Xia, Shu (Inventor)

    2002-01-01

    A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

  16. Field reversal in mirror machines

    International Nuclear Information System (INIS)

    Pearlstein, L.D.; Anderson, D.V.; Boozer, A.H.

    1978-01-01

    This report discusses some of the physics issues anticipated in field-reversed mirrors. The effect of current cancellation due to electrons is described. An estimate is made of the required impurity level to maintain a field-reversed configuration. The SUPERLAYER code is used to simulate the high-β 2XIIB results, and favorable comparisons require inclusion of quasilinear RF turbulence. Impact of a quadrupole field on field-line closure and resonant transport is discussed. A simple self-consistent model of ion currents is presented. Conditions for stability of field-reversed configurations to E x B driven rotations are determined

  17. Graded Mirror Self-Recognition by Clark's Nutcrackers.

    Science.gov (United States)

    Clary, Dawson; Kelly, Debbie M

    2016-11-04

    The traditional 'mark test' has shown some large-brained species are capable of mirror self-recognition. During this test a mark is inconspicuously placed on an animal's body where it can only be seen with the aid of a mirror. If the animal increases the number of actions directed to the mark region when presented with a mirror, the animal is presumed to have recognized the mirror image as its reflection. However, the pass/fail nature of the mark test presupposes self-recognition exists in entirety or not at all. We developed a novel mirror-recognition task, to supplement the mark test, which revealed gradation in the self-recognition of Clark's nutcrackers, a large-brained corvid. To do so, nutcrackers cached food alone, observed by another nutcracker, or with a regular or blurry mirror. The nutcrackers suppressed caching with a regular mirror, a behavioural response to prevent cache theft by conspecifics, but did not suppress caching with a blurry mirror. Likewise, during the mark test, most nutcrackers made more self-directed actions to the mark with a blurry mirror than a regular mirror. Both results suggest self-recognition was more readily achieved with the blurry mirror and that self-recognition may be more broadly present among animals than currently thought.

  18. Tinbergen on mirror neurons

    Science.gov (United States)

    Heyes, Cecilia

    2014-01-01

    Fifty years ago, Niko Tinbergen defined the scope of behavioural biology with his four problems: causation, ontogeny, survival value and evolution. About 20 years ago, there was another highly significant development in behavioural biology—the discovery of mirror neurons (MNs). Here, I use Tinbergen's original four problems (rather than the list that appears in textbooks) to highlight the differences between two prominent accounts of MNs, the genetic and associative accounts; to suggest that the latter provides the defeasible ‘best explanation’ for current data on the causation and ontogeny of MNs; and to argue that functional analysis, of the kind that Tinbergen identified somewhat misleadingly with studies of ‘survival value’, should be a high priority for future research. In this kind of functional analysis, system-level theories would assign MNs a small, but potentially important, role in the achievement of action understanding—or another social cognitive function—by a production line of interacting component processes. These theories would be tested by experimental intervention in human and non-human animal samples with carefully documented and controlled developmental histories. PMID:24778376

  19. Tinbergen on mirror neurons.

    Science.gov (United States)

    Heyes, Cecilia

    2014-01-01

    Fifty years ago, Niko Tinbergen defined the scope of behavioural biology with his four problems: causation, ontogeny, survival value and evolution. About 20 years ago, there was another highly significant development in behavioural biology-the discovery of mirror neurons (MNs). Here, I use Tinbergen's original four problems (rather than the list that appears in textbooks) to highlight the differences between two prominent accounts of MNs, the genetic and associative accounts; to suggest that the latter provides the defeasible 'best explanation' for current data on the causation and ontogeny of MNs; and to argue that functional analysis, of the kind that Tinbergen identified somewhat misleadingly with studies of 'survival value', should be a high priority for future research. In this kind of functional analysis, system-level theories would assign MNs a small, but potentially important, role in the achievement of action understanding-or another social cognitive function-by a production line of interacting component processes. These theories would be tested by experimental intervention in human and non-human animal samples with carefully documented and controlled developmental histories.

  20. Cryogenic Active Mirrors

    Data.gov (United States)

    National Aeronautics and Space Administration — This effort seeks to develop active mirrors that can correct for thermally-induced figure deformations upon cooling from room-temperature at the time of manufacture,...

  1. Manufacturing parabolic mirrors

    CERN Multimedia

    CERN PhotoLab

    1975-01-01

    The photo shows the construction of a vertical centrifuge mounted on an air cushion, with a precision of 1/10000 during rotation, used for the manufacture of very high=precision parabolic mirrors. (See Annual Report 1974.)

  2. Mirror fermions and cosmology

    International Nuclear Information System (INIS)

    Senjanovic, G.; Virginia Polytechnic Inst. and State Univ., Blacksburg

    1984-07-01

    Extended supersymmetry, Kaluza-Klein theory and family unification all suggest the existence of mirror fermions, with same quantum numbers but opposite helicities from ordinary fermions. The laboratory and especially cosmological implications of such particles are reviewed and summarized. (author)

  3. The obsidian mirror The obsidian mirror

    Directory of Open Access Journals (Sweden)

    Maria do Socorro Reis Amorin

    2008-04-01

    Full Text Available The author James Norman is an American who has always lived in Mexico during the summer. He seems to love Mexican - Indian traditions and he is well acquainted with the pre-historic culture as it is shown in his book: "The Obsidian Mirror". "The Obsidian Mirror" is a mysterious story about an archeologist: Quigley that lives in a small village in Mexico-San Marcos. He is searching for antiques that belong to some tribes of pre-historic Indians in order to find out their mysteries. Quigley becomes so engaged in his work that his mind has reached a stage that is impossible to separate between Quigley the archeologist, and Quigley as an ancient Indian. The culture, the myth, the sensation of Omen - characteristics of the Indians are within himself. As a result, Quigley acts sometimes as a real Indian. The author James Norman is an American who has always lived in Mexico during the summer. He seems to love Mexican - Indian traditions and he is well acquainted with the pre-historic culture as it is shown in his book: "The Obsidian Mirror". "The Obsidian Mirror" is a mysterious story about an archeologist: Quigley that lives in a small village in Mexico-San Marcos. He is searching for antiques that belong to some tribes of pre-historic Indians in order to find out their mysteries. Quigley becomes so engaged in his work that his mind has reached a stage that is impossible to separate between Quigley the archeologist, and Quigley as an ancient Indian. The culture, the myth, the sensation of Omen - characteristics of the Indians are within himself. As a result, Quigley acts sometimes as a real Indian.

  4. A passive CMOS pixel sensor for the high luminosity LHC

    Energy Technology Data Exchange (ETDEWEB)

    Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Janssen, Jens; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

    2016-07-01

    The high luminosity upgrade for the Large Hadron Collider at CERN requires a new inner tracking detector for the ATLAS experiment. About 200 m{sup 2} of silicon detectors are needed demanding new, low cost hybridization- and sensor technologies. One promising approach is to use commercial CMOS technologies to produce the passive sensor for a hybrid pixel detector design. In this talk a fully functional prototype of a 300 μm thick, backside biased CMOS pixel sensor in 150 nm LFoundry technology is presented. The sensor is bump bonded to the ATLAS FE-I4 with AC and DC coupled pixels. Results like leakage current, noise performance, and charge collection efficiency are presented and compared to the actual ATLAS pixel sensor design.

  5. Experimental research on transient ionizing radiation effects of CMOS microcontroller

    International Nuclear Information System (INIS)

    Jin Xiaoming; Fan Ruyu; Chen Wei; Wang Guizhen; Lin Dongsheng; Yang Shanchao; Bai Xiaoyan

    2010-01-01

    This paper presents an experimental test system of CMOS microcontroller EE80C196KC20. Based on this system, the transient ionizing radiation effects on microcontroller were investigated using 'Qiangguang-I' accelerator. The gamma pulse width was 20 ns and the dose rate (for the Si atom) was in the range of 6.7 x 10 6 to 2.0 x 10 8 Gy/s in the experimental study. The disturbance and latchup effects were observed at different dose rate levels. Latchup threshold of the microcontroller was obtained. Disturbance interval and the system power supply current have a relationship with the dose rate level. The transient ionizing radiation induces photocurrent in the PN junctions that are inherent in CMOS circuits. The photocurrent is responsible for the electrical and functional degradation. (authors)

  6. A CMOS silicon spin qubit

    Science.gov (United States)

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  7. Geometry of mirror manifolds

    International Nuclear Information System (INIS)

    Aspinwall, P.S.; Luetken, C.A.

    1991-01-01

    We analyze the mirror manifold hypothesis in one and three dimensions using the simplest available representations of the N = 2 superconformal algebra. The symmetries of these tensor models can be divided out to give an explicit representation of the mirror, and we give a simple group theoretical algorithm for determining which symmetries should be used. We show that the mirror of a superconformal field theory does not always have a geometrical interpretation, but when it does, deformations of complex structure of one manifold are reflected in deformations of the Kaehler form of the mirror manifold, and we show how the large radius limit of a manifold corresponds to a large complex structure limit in the mirror manifold. The mirror of the Tian-Yau three generation model is constructed both as a conformal field theory and as an algebraic variety with Euler number six. The Hodge numbers of this manifolds are fixed, but the intersection numbes are highly ambiguous, presumably reflected a rich structure of multicritical points in the moduli space of the field theory. (orig.)

  8. Manufacturability of compact synchrotron mirrors

    Science.gov (United States)

    Douglas, Gary M.

    1997-11-01

    While many of the government funded research communities over the years have put their faith and money into increasingly larger synchrotrons, such as Spring8 in Japan, and the APS in the United States, a viable market appears to exist for smaller scale, research and commercial grade, compact synchrotrons. These smaller, and less expensive machines, provide the research and industrial communities with synchrotron radiation beamline access at a portion of the cost of their larger and more powerful counterparts. A compact synchrotron, such as the Aurora-2D, designed and built by Sumitomo Heavy Industries, Ltd. of japan (SHI), is a small footprint synchrotron capable of sustaining 20 beamlines. Coupled with a Microtron injector, with 150 MeV of injection energy, an entire facility fits within a 27 meter [88.5 ft] square floorplan. The system, controlled by 2 personal computers, is capable of producing 700 MeV electron energy and 300 mA stored current. Recently, an Aurora-2D synchrotron was purchased from SHI by the University of Hiroshima. The Rocketdyne Albuquerque Operations Beamline Optics Group was approached by SHI with a request to supply a group of 16 beamline mirrors for this machine. These mirrors were sufficient to supply 3 beamlines for the Hiroshima machine. This paper will address engineering issues which arose during the design and manufacturing of these mirrors.

  9. Open trap with ambipolar mirrors

    International Nuclear Information System (INIS)

    Dimov, G.I.; Zakajdakov, V.V.; Kishinevskij, M.E.

    1977-01-01

    Results of numerical calculations on the behaviour of a thermonuclear plasma, allowing for α-particles in a trap with longitudinal confinement of the main ions by ambipolar electric fields are presented. This trap is formed by connecting two small-volume ''mirrortrons'' to an ordinary open trap. Into the extreme mirrortrons, approximately 1-MeV ions are introduced continuously by ionization of atomic beams on the plasma, and approximately 10-keV ions are similarly introduced into the main central region of the trap. By a suitable choice of injection currents, the plasma density established in the extreme mirrortrons is higher than in the central region. As a result of the quasi-neutrality condition, a longitudinal ambipolar field forming a potential well not only for electrons but also for the central ions is formed in the plasma. When the depth of the well for the central ions is much greater than their temperature, their life-time considerably exceeds the time of confinement by the magnetic mirrors. As a result, the plasma density is constant over the entire length of the central mirrortron, including the regions near the mirrors, and an ambipolar field is formed only in the extreme mirrortrons. The distribution of central ions and ambipolar potential in the extreme mirrortrons is uniquely determined by the density distribution of fast extreme ions. It is shown in the present study that an amplification coefficient Q as high as desired can, in principle, be reached in the trap under consideration, allowing for α-particles. However, this requires high magnetic fields in the mirrors and a sufficient length of the central mirrotron. It is shown that for moderate values of Q=3-8, it is desirable not to confine the central fast α-particles. To achieve a coefficient of Q=5, it is necessary to create fields of 250 kG in the mirrors, and the length of the trap must not be greater than 100 m. (author)

  10. Carbon Nanotube Integration with a CMOS Process

    Science.gov (United States)

    Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

  11. Single event mirroring and sense amplifier designs for enhanced SE tolerance of DRAMs

    International Nuclear Information System (INIS)

    Gulati, K.; Massengill, L.W.

    1994-01-01

    This paper investigates the applicability of existing SRAM SEU hardening techniques to conventional CMOS cross-coupled sense amplifiers used in DRAM structures. We propose a novel SEU mirroring concept and implementation for hardening DRAMs to bitline hits. Simulations indicate a 24-fold improvement in critical charge during the sensing state using a 10K T-Resistor scheme and a 28-fold improvement during the highly susceptible high impedance state using 2pF dynamic capacitance coupling

  12. CMOS sensors for atmospheric imaging

    Science.gov (United States)

    Pratlong, Jérôme; Burt, David; Jerram, Paul; Mayer, Frédéric; Walker, Andrew; Simpson, Robert; Johnson, Steven; Hubbard, Wendy

    2017-09-01

    Recent European atmospheric imaging missions have seen a move towards the use of CMOS sensors for the visible and NIR parts of the spectrum. These applications have particular challenges that are completely different to those that have driven the development of commercial sensors for applications such as cell-phone or SLR cameras. This paper will cover the design and performance of general-purpose image sensors that are to be used in the MTG (Meteosat Third Generation) and MetImage satellites and the technology challenges that they have presented. We will discuss how CMOS imagers have been designed with 4T pixel sizes of up to 250 μm square achieving good charge transfer efficiency, or low lag, with signal levels up to 2M electrons and with high line rates. In both devices a low noise analogue read-out chain is used with correlated double sampling to suppress the readout noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. Radiation hardness is a particular challenge for CMOS detectors and both of these sensors have been designed to be fully radiation hard with high latch-up and single-event-upset tolerances, which is now silicon proven on MTG. We will also cover the impact of ionising radiation on these devices. Because with such large pixels the photodiodes have a large open area, front illumination technology is sufficient to meet the detection efficiency requirements but with thicker than standard epitaxial silicon to give improved IR response (note that this makes latch up protection even more important). However with narrow band illumination reflections from the front and back of the dielectric stack on the top of the sensor produce Fabry-Perot étalon effects, which have been minimised with process modifications. We will also cover the addition of precision narrow band filters inside the MTG package to provide a complete imaging subsystem. Control of reflected light is also critical in obtaining the

  13. A Glucose Biosensor Using CMOS Potentiostat and Vertically Aligned Carbon Nanofibers.

    Science.gov (United States)

    Al Mamun, Khandaker A; Islam, Syed K; Hensley, Dale K; McFarlane, Nicole

    2016-08-01

    This paper reports a linear, low power, and compact CMOS based potentiostat for vertically aligned carbon nanofibers (VACNF) based amperometric glucose sensors. The CMOS based potentiostat consists of a single-ended potential control unit, a low noise common gate difference-differential pair transimpedance amplifier and a low power VCO. The potentiostat current measuring unit can detect electrochemical current ranging from 500 nA to 7 [Formula: see text] from the VACNF working electrodes with high degree of linearity. This current corresponds to a range of glucose, which depends on the fiber forest density. The potentiostat consumes 71.7 [Formula: see text] of power from a 1.8 V supply and occupies 0.017 [Formula: see text] of chip area realized in a 0.18 [Formula: see text] standard CMOS process.

  14. Advanced CMOS device technologies for 45 nm node and below

    Directory of Open Access Journals (Sweden)

    A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak and S. Biesemans

    2007-01-01

    Full Text Available We review and discuss the latest developments and technology options for 45 nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices. One of the main metal gate (MG candidates for scaled CMOS technologies are fully silicided (FUSI gates. In this work, by means of a selective and controlled poly etch-back integration process, dual work-function Ni-based FUSI/HfSiON CMOS circuits with record ring oscillator performance (high-VT are reported (17 ps at VDD=1.1 V and 20 pA/μm Ioff, meeting the ITRS 45 nm node requirement for low-power (LP CMOS. Compatibility of FUSI and other MG with known stress boosters like stressed CESL (contact-etch-stop-layer with high intrinsic stress or embedded SiGe in the pMOS S/D regions is validated. To obtain MuGFET devices that are competitive, as compared to conventional planar bulk devices, and that meet the stringent drive and leakage current requirements for the 32 nm node and beyond, higher channel mobilities are required. Results obtained by several strain engineering methods are presented here.

  15. 32 x 16 CMOS smart pixel array for optical interconnects

    Science.gov (United States)

    Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

    2000-05-01

    Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

  16. Helically linked mirror arrangement

    International Nuclear Information System (INIS)

    Ranjan, P.

    1986-08-01

    A scheme is described for helical linking of mirror sections, which endeavors to combine the better features of toroidal and mirror devices by eliminating the longitudinal loss of mirror machines, having moderately high average β and steady state operation. This scheme is aimed at a device, with closed magnetic surfaces having rotational transform for equilibrium, one or more axisymmetric straight sections for reduced radial loss, a simple geometrical axis for the links and an overall positive magnetic well depth for stability. We start by describing several other attempts at linking of mirror sections, made both in the past and the present. Then a description of our helically linked mirror scheme is given. This example has three identical straight sections connected by three sections having helical geometric axes. A theoretical analysis of the magnetic field and single-particle orbits in them leads to the conclusion that most of the passing particles would be confined in the device and they would have orbits independent of pitch angle under certain conditions. Numerical results are presented, which agree well with the theoretical results as far as passing particle orbits are concerned

  17. Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime

    Directory of Open Access Journals (Sweden)

    Yasuhisa Omura

    2014-01-01

    Full Text Available This paper describes the performance prospect of scaled cross-current tetrode (XCT CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders higher stems from the “source potential floating effect”, which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand a long device lifetime without recharging the battery.

  18. Ultralow-loss CMOS copper plasmonic waveguides

    DEFF Research Database (Denmark)

    Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

    2016-01-01

    with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

  19. Latch-up in CMOS integrated circuits

    International Nuclear Information System (INIS)

    Estreich, D.B.; Dutton, R.W.

    1978-04-01

    An analysis is presented of latch-up in CMOS integrated circuits. A latch-up prediction algorithm has been developed and used to evaluate methods to control latch-up. Experimental verification of the algorithm is demonstrated

  20. Nanometer CMOS ICs from basics to ASICs

    CERN Document Server

    J M Veendrick, Harry

    2017-01-01

    This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

  1. Variationen und ihre Kompensation in CMOS Digitalschaltungen

    OpenAIRE

    Baumann, Thomas

    2010-01-01

    Variationen bei der Herstellung und während des Betriebs von CMOS Schaltungen beeinflussen deren Geschwindigkeit und erschweren die Verifikation der in der Spezifikation zugesicherten Eigenschaften. In dieser Arbeit wird eine abstraktionsebenenübergreifende Vorgehensweise zur Abschätzung des Einflusses von Prozess- und betriebsbedingten Umgebungsvariationen auf die Geschwindigkeit einer Schaltung vorgestellt. Neben Untersuchungen der Laufzeitsensitivität in low-power CMOS Technologien von...

  2. Batch Processing of CMOS Compatible Feedthroughs

    DEFF Research Database (Denmark)

    Rasmussen, F.E.; Heschel, M.; Hansen, Ole

    2003-01-01

    . The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...... of 2.5 pF. (C) 2003 Elsevier Science B.V. All rights reserved....

  3. A Conceptual Mirror

    DEFF Research Database (Denmark)

    Badie, Farshad

    2017-01-01

    The multilevel interactions between a mentor and her/his learner could exchange various conceptions between them that are supported by their own conceptualisations. Producing the own realisation of a world and developing it in the context of interactions could be said to be the most valuable prod...... will analyse the logical dependencies between learner and men- tor and will check their reflectional symmetrical relationship in a conceptual mirror. The conceptual mirror is a phenomenon that represents the meeting point of the mentor’s and the learner’s conceptual knowledge....

  4. CMOS Voltage-Controlled Oscillator Resilient Design for Wireless Communication Applications

    Directory of Open Access Journals (Sweden)

    Ekavut Kritchanchai

    2015-08-01

    Full Text Available Semiconductor process variation and reliability aging effect on CMOS VCO performance has been studied. A technique to mitigate the effect of process variations on the performances of nano-scale CMOS LC-VCO is presented. The LC-VCO compensation uses a process invariant current source. VCO parameters such as phase noise and core power before and after compensation over a wide range of variability are examined. Analytical equations are derived for physical insight. ADS and Monte-Carlo simulation results show that the use of invariant current source improves the robustness of the VCO performance against process variations and device aging.

  5. Optimization of CMOS active pixels for high resolution digital radiography

    International Nuclear Information System (INIS)

    Kim, Young Soo

    2007-02-01

    CMOS image sensors have poorer performance compared to conventional charge coupled devices (CCDs). Since CMOS Active Pixel Sensors (APSs) in general have higher temporal noise, higher dark current, smaller full well charge capacitance, and lower spectral response, they cannot provide the same wide dynamic range and superior signal-to-noise ratio as CCDs. In view of electronic noise, the main source for the CMOS APS is the pixel, along with other signal processing blocks such as row and column decoder, analog signal processor (ASP), analog-to-digital converter (ADC), and timing and control logic circuitry. Therefore, it is important and necessary to characterize noise of the active pixels in CMOS APSs. We developed our theoretical noise model to account for the temporal noise in active pixels, and then found out the optimum design parameters such as fill actor, each size of the three transistors (source follower, row selection transistor, bias transistor) comprising active pixels, bias current, and load capacitance that can have the maximum signal-to-noise ratio. To develop the theoretical noise model in active pixels, we considered the integration noise of the photodiode and the readout noise of the transistors related to readout. During integration, the shot noise due to the dark current and photocurrent, during readout, the thermal and flicker noise were considered. The developed model can take the input variables such as photocurrent, capacitance of the photodiode, integration time, transconductance of the transistors, channel resistance of the transistors, gate-to-source capacitance of the follower, and load capacitance etc. To validate our noise model, two types of test structures have been realized. Firstly, four types of photodiodes (n_d_i_f_f_u_s_i_o_n/p_s_u_b_s_t_r_a_t_e, n_w_e_l_l/p_s_u_b_s_t_r_a_t_e, n_d_i_f_f_u_s_i_o_n/p_e_p_i_t_a_x_i_a_l/p_s_u_b_s_t_r_a_t_e, n_w_e_l_l/p_e_p_i_t_a_x_i_a_l/p_s_u_b_s_t_r_a_t_e) used in CMOS active pixels were fabricated

  6. TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

    CERN Document Server

    Buckland, Matthew Daniel

    2016-01-01

    The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.

  7. Constraints on mirror models of dark matter from observable neutron-mirror neutron oscillation

    Science.gov (United States)

    Mohapatra, Rabindra N.; Nussinov, Shmuel

    2018-01-01

    The process of neutron-mirror neutron oscillation, motivated by symmetric mirror dark matter models, is governed by two parameters: n -n‧ mixing parameter δ and n -n‧ mass splitting Δ. For neutron mirror neutron oscillation to be observable, the splitting between their masses Δ must be small and current experiments lead to δ ≤ 2 ×10-27 GeV and Δ ≤10-24 GeV. We show that in mirror universe models where this process is observable, this small mass splitting constrains the way that one must implement asymmetric inflation to satisfy the limits of Big Bang Nucleosynthesis on the number of effective light degrees of freedom. In particular we find that if asymmetric inflation is implemented by inflaton decay to color or electroweak charged particles, the oscillation is unobservable. Also if one uses SM singlet fields for this purpose, they must be weakly coupled to the SM fields.

  8. Amorphous Metals and Composites as Mirrors and Mirror Assemblies

    Science.gov (United States)

    Hofmann, Douglas C. (Inventor); Davis, Gregory L. (Inventor); Agnes, Gregory S. (Inventor); Shapiro, Andrew A. (Inventor)

    2016-01-01

    A mirror or mirror assembly fabricated by molding, pressing, assembling, or depositing one or more bulk metal glass (BMG), bulk metal glass composite (BMGMC), or amorphous metal (AM) parts and where the optical surface and backing of the mirror can be fabricated without machining or polishing by utilizing the unique molding capabilities of this class of materials.

  9. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    KAUST Repository

    Saffih, Faycal; Elshurafa, Amro M.; Mohammad, Mohammad Ali; Nelson-Fitzpatrick, Nathan E.; Evoy, S.

    2012-01-01

    . The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly

  10. Analysis of Different Topologies of Inverter in 0.18μm CMOS Technology and its Comparision

    OpenAIRE

    Ashish Panchal; Rajkumar Gehlot; Nidhi Maheshwari; Prafful Dubey

    2011-01-01

    In this paper we study inverter topologies under various criteria and caracteristics using Cadence tool.This paper includes analysis of inveter topologies utilized in VLSI that includes CMOS, Pseudo NMOS and Dynamic families. The characteristics include DC transfer characteristics, current Vs voltage characteristics,area and delay. The inverter topologies has been designed in 0.18μm CMOS technology with 1.8V supply voltage. SPECTRA RF simulator is used for circuit simulation. This paper also ...

  11. Tandem mirror reactor

    International Nuclear Information System (INIS)

    Moir, R.W.; Barr, W.L.; Carlson, G.A.

    1977-01-01

    A parametric analysis and a preliminary conceptual design for a 1000 MWe Tandem Mirror Reactor (TMR) are described. The concept is sufficiently attractive to encourage further work, both for a pure fusion TMR and a low technology TMR Fusion-Fission Hybrid

  12. Advanced Curvature Deformable Mirrors

    Science.gov (United States)

    2010-09-01

    ORGANIZATION NAME(S) AND ADDRESS(ES) University of Hawaii ,Institute for Astronomy,640 North A‘ohoku Place, #209 , Hilo ,HI,96720-2700 8. PERFORMING...Advanced Curvature Deformable Mirrors Christ Ftaclas1,2, Aglae Kellerer2 and Mark Chun2 Institute for Astronomy, University of Hawaii

  13. Mirror reactor blankets

    International Nuclear Information System (INIS)

    Lee, J.D.; Barmore, W.L.; Bender, D.J.; Doggett, J.N.; Galloway, T.R.

    1976-01-01

    The general requirements of a breeding blanket for a mirror reactor are described. The following areas are discussed: (1) facility layout and blanket maintenance, (2) heat transfer and thermal conversion system, (3) materials, (4) tritium containment and removal, and (5) nuclear performance

  14. Minimal mirror twin Higgs

    Energy Technology Data Exchange (ETDEWEB)

    Barbieri, Riccardo [Institute of Theoretical Studies, ETH Zurich,CH-8092 Zurich (Switzerland); Scuola Normale Superiore,Piazza dei Cavalieri 7, 56126 Pisa (Italy); Hall, Lawrence J.; Harigaya, Keisuke [Department of Physics, University of California,Berkeley, California 94720 (United States); Theoretical Physics Group, Lawrence Berkeley National Laboratory,Berkeley, California 94720 (United States)

    2016-11-29

    In a Mirror Twin World with a maximally symmetric Higgs sector the little hierarchy of the Standard Model can be significantly mitigated, perhaps displacing the cutoff scale above the LHC reach. We show that consistency with observations requires that the Z{sub 2} parity exchanging the Standard Model with its mirror be broken in the Yukawa couplings. A minimal such effective field theory, with this sole Z{sub 2} breaking, can generate the Z{sub 2} breaking in the Higgs sector necessary for the Twin Higgs mechanism. The theory has constrained and correlated signals in Higgs decays, direct Dark Matter Detection and Dark Radiation, all within reach of foreseen experiments, over a region of parameter space where the fine-tuning for the electroweak scale is 10-50%. For dark matter, both mirror neutrons and a variety of self-interacting mirror atoms are considered. Neutrino mass signals and the effects of a possible additional Z{sub 2} breaking from the vacuum expectation values of B−L breaking fields are also discussed.

  15. Mirror fusion--fission hybrids

    International Nuclear Information System (INIS)

    Lee, J.D.

    1978-01-01

    The fusion-fission concept and the mirror fusion-fission hybrid program are outlined. Magnetic mirror fusion drivers and blankets for hybrid reactors are discussed. Results of system analyses are presented and a reference design is described

  16. Physics of mirror fusion systems

    International Nuclear Information System (INIS)

    Post, R.F.

    1976-01-01

    Recent experimental results with the 2XIIB mirror machine at Lawrence Livermore Laboratory have demonstrated the stable confinement of plasmas at fusion temperatures and with energy densities equaling or exceeding that of the confining fields. The physics of mirror confinement is discussed in the context of these new results. Some possible approaches to further improving the confinement properties of mirror systems and the impact of these new approaches on the prospects for mirror fusion reactors are discussed

  17. Mirror reactor studies

    International Nuclear Information System (INIS)

    Moir, R.W.; Barr, W.L.; Bender, D.J.

    1977-01-01

    Design studies of a fusion mirror reactor, a fusion-fission mirror reactor, and two small mirror reactors are summarized. The fusion reactor uses 150-keV neutral-beam injectors based on the acceleration of negative ions. The injectors provide over 1 GW of continuous power at an efficiency greater than 80%. The fusion reactor has three-stage, modularized, Venetian blind, plasma direct converter with a predicted efficiency of 59% and a new concept for removal of the lune-shaped blanket: a crane is brought between the two halves of the Yin-Yang magnet, which are separated by a float. The design has desirable features such as steady-state operation, minimal impurity problems, and low first-wall thermal stress. The major disadvantage is low Q resulting in high re-circulating power and hence high cost of electrical power. However, the direct capital cost per unit of gross electrical power is reasonable [$1000/kW(e)]. By contrast, the fusion-fission reactor design is not penalized by re-circulating power and uses relatively near-term fusion technology being developed for the fusion power program. New results are presented on the Th- 233 U and the U- 239 Pu fuel cycles. The purpose of this hybrid is fuel production, with projected costs at $55/g of Pu or $127/g of 233 U. Blanket and cooling system designs, including an emergency cooling system, by General Atomic Company, lead us to the opinion that the reactor can meet expected safety standards for licensing. The smallest mirror reactor having only a shield between the plasma and the coil is the 4.2-m long fusion engineering research facility (FERF) designed for material irradiation. The smallest mirror reactor having both a blanket and shield is the 7.5-m long experimental power reactor (EPR), which has both a fusion and a fusion-fission version. (author)

  18. Mirror neurons and imitation: a computationally guided review.

    Science.gov (United States)

    Oztop, Erhan; Kawato, Mitsuo; Arbib, Michael

    2006-04-01

    Neurophysiology reveals the properties of individual mirror neurons in the macaque while brain imaging reveals the presence of 'mirror systems' (not individual neurons) in the human. Current conceptual models attribute high level functions such as action understanding, imitation, and language to mirror neurons. However, only the first of these three functions is well-developed in monkeys. We thus distinguish current opinions (conceptual models) on mirror neuron function from more detailed computational models. We assess the strengths and weaknesses of current computational models in addressing the data and speculations on mirror neurons (macaque) and mirror systems (human). In particular, our mirror neuron system (MNS), mental state inference (MSI) and modular selection and identification for control (MOSAIC) models are analyzed in more detail. Conceptual models often overlook the computational requirements for posited functions, while too many computational models adopt the erroneous hypothesis that mirror neurons are interchangeable with imitation ability. Our meta-analysis underlines the gap between conceptual and computational models and points out the research effort required from both sides to reduce this gap.

  19. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-11-15

    The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

  20. Review of mirror fusion reactor designs

    International Nuclear Information System (INIS)

    Bender, D.J.

    1977-01-01

    Three magnetic confinement concepts, based on the mirror principle, are described. These mirror concepts are summarized as follows: (1) fusion-fission hybrid reactor, (2) tandem mirror reactor, and (3) reversed field mirror reactor

  1. Thermal performance of the ATST secondary mirror

    Science.gov (United States)

    Cho, Myung K.; DeVries, Joe; Hansen, Eric

    2007-12-01

    The Advanced Technology Solar Telescope (ATST) has a 4.24m off-axis primary mirror designed to deliver diffractionlimited images of the sun. Its baseline secondary mirror (M2) design uses a 0.65m diameter Silicon Carbide mirror mounted kinematically by a bi-pod flexure mechanism at three equally spaced locations. Unlike other common telescopes, the ATST M2 is to be exposed to a significant solar heat loading. A thermal management system (TMS) will be developed to accommodate the solar loading and minimize "mirror seeing effect" by controlling the temperature difference between the M2 optical surface and the ambient air at the site. Thermo-elastic analyses for steady state thermal behaviors of the ATST secondary mirror was performed using finite element analysis by I-DEAS TM and PCRINGE TM for the optical analysis. We examined extensive heat transfer simulation cases and their results were discussed. The goal of this study is to establish thermal models by I-DEAS for an adequate thermal environment. These thermal models will be useful for estimating segment thermal responses. Current study assumes a few sample time dependent thermal loadings to synthesize the operational environment.

  2. Mirror theory applied to toroidal systems

    International Nuclear Information System (INIS)

    Cohen, R.H.

    1987-01-01

    Central features of a mirror plasma are strong departures from Maxwellian distribution functions, ambipolar potentials and densities which vary along a field line, and losses, and the mirror field itself. To examine these features, mirror theorists have developed analytical and numerical techniques to solve the Fokker-Planck equation, evaluate the potentials consistent with the resulting distribution functions, and assess the microstability of these distributions. Various combinations of mirror-plasma fetures are present and important in toroidal plasmas as well, particularly in the edge region and in plasmas with strong r.f. heating. In this paper we survey problems in toroidal plasmas where mirror theory and computational techniques are applicable, and discuss in more detail three specific examples: calculation of the toroidal generalization of the Spitzer-Haerm distribution function (from which trapped-particle effects on current drive can be calculated), evaluation of the nonuniform potential and density set up by pulsed electron-cyclotron heating, and calculation of steady-state distribution functions in the presence of strong r.f. heating and collisions. 37 refs., 3 figs

  3. Mirror theory applied to toroidal systems

    International Nuclear Information System (INIS)

    Cohen, R.H.

    1987-01-01

    Central features of a mirror plasma are strong departures from Maxwellian distribution functions, ambipolar potentials and densities which vary along a field line, end losses, and the mirror field itself. To examine these features, mirror theorists have developed analytical and numerical techniques to solve the Fokker-Planck equation, evaluate the potentials consistent with the resulting distribution functions, and assess the microstability of these distributions. Various combinations of mirror-plasma features are present and important in toroidal plasmas as well, particularly in the edge region and in plasmas with strong rf heating. In this paper we survey problems in toroidal plasmas where mirror theory and computational techniques are applicable, and discuss in more detail three specific examples: calculation of the toroidal generalization of the Spitzer-Haerm distribution function (from which trapped-particle effects on current drive can be calculated), evaluation of the nonuniform potential and density set up by pulsed electron-cyclotron heating, and calculation of steady-state distribution functions in the presence of strong rf heating and collisions. 37 refs

  4. A CMOS smart temperature and humidity sensor with combined readout.

    Science.gov (United States)

    Eder, Clemens; Valente, Virgilio; Donaldson, Nick; Demosthenous, Andreas

    2014-09-16

    A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm2 or 1.2 mm2 were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 µA.

  5. Mirror image agnosia.

    Science.gov (United States)

    Chandra, Sadanandavalli Retnaswami; Issac, Thomas Gregor

    2014-10-01

    Gnosis is a modality-specific ability to access semantic knowledge of an object or stimulus in the presence of normal perception. Failure of this is agnosia or disorder of recognition. It can be highly selective within a mode. self-images are different from others as none has seen one's own image except in reflection. Failure to recognize this image can be labeled as mirror image agnosia or Prosopagnosia for reflected self-image. Whereas mirror agnosia is a well-recognized situation where the person while looking at reflected images of other objects in the mirror he imagines that the objects are in fact inside the mirror and not outside. Five patients, four females, and one male presented with failure to recognize reflected self-image, resulting in patients conversing with the image as a friend, fighting because the person in mirror is wearing her nose stud, suspecting the reflected self-image to be an intruder; but did not have prosopagnosia for others faces, non living objects on self and also apraxias except dressing apraxia in one patient. This phenomena is new to our knowledge. Mirror image agnosia is an unique phenomena which is seen in patients with parietal lobe atrophy without specificity to a category of dementing illness and seems to disappear as disease advances. Reflected self-images probably have a specific neural substrate that gets affected very early in posterior dementias specially the ones which predominantly affect the right side. At that phase most patients are mistaken as suffering from psychiatric disorder as cognition is moderately preserved. As disease becomes more widespread this symptom becomes masked. A high degree of suspicion and proper assessment might help physicians to recognize the organic cause of the symptom so that early therapeutic interventions can be initiated. Further assessment of the symptom with FMRI and PET scan is likely to solve the mystery of how brain handles reflected self-images. A new observation involving failure

  6. CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

    Science.gov (United States)

    Davidson, Bradley Darren

    This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

  7. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

    2017-01-01

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

  8. CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

  9. Computational study of the influence of mirror parameters on FRC (field-reversed configuration) equilibria:

    International Nuclear Information System (INIS)

    Fuentes, N.O.; Sakanaka, P.H.

    1990-01-01

    Field-reversed configuration equilibria are studied by solving the Grad-Shafranov equation. A multiple coil system (main coil and end mirrors) is considered to simulate the coil geometry of CNEA device. First results are presented for computed two-dimensional FRC equilibria produced varying the mirror coil current with two different mirror lenghts. (Author)

  10. A Current-Mode Common-Mode Feedback Circuit (CMFB) with Rail-to-Rail Operation

    Science.gov (United States)

    Suadet, Apirak; Kasemsuwan, Varakorn

    2011-03-01

    This paper presents a current-mode common-mode feedback (CMFB) circuit with rail-to-rail operation. The CMFB is a stand-alone circuit, which can be connected to any low voltage transconductor without changing or upsetting the existing circuit. The proposed CMFB employs current mirrors, operating as common-mode detector and current amplifier to enhance the loop gain of the CMFB. The circuit employs positive feedback to enhance the output impedance and gain. The circuit has been designed using a 0.18 μm CMOS technology under 1V supply and analyzed using HSPICE with BSIM3V3 device models. A pseudo-differential amplifier using two common sources and the proposed CMFB shows rail to rail output swing (± 0.7 V) with low common-mode gain (-36 dB) and power dissipation of 390 μW.

  11. An analysis of latch-up characteristics and latch-up windows in CMOS integrated circuits

    International Nuclear Information System (INIS)

    Xu Xianguo; Yang Huaimin

    2004-01-01

    Because of topology's complexity, there may be several potential parasitic latch-up paths in a CMOS integrated circuit. All of the latch-up paths may have an effect on each other or one another due to different triggering dose rate, holding voltage and holding current and then one or more latch-up windows may appear. After we analyze the latch-up characteristic of CMOS integrated circuits in detail, a 'three-path' latch-up model is developed and used to explain the latch-up window phenomena reasonably. (authors)

  12. Study of prototypes of LFoundry active CMOS pixels sensors for the ATLAS detector

    Science.gov (United States)

    Vigani, L.; Bortoletto, D.; Ambroz, L.; Plackett, R.; Hemperek, T.; Rymaszewski, P.; Wang, T.; Krueger, H.; Hirono, T.; Caicedo Sierra, I.; Wermes, N.; Barbero, M.; Bhat, S.; Breugnon, P.; Chen, Z.; Godiot, S.; Pangaud, P.; Rozanov, A.

    2018-02-01

    Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.

  13. Study of prototypes of LFoundry active CMOS pixels sensors for the ATLAS detector

    CERN Document Server

    Vigani, L.; Ambroz, L.; Plackett, R.; Hemperek, T.; Rymaszewski, P.; Wang, T.; Krueger, H.; Hirono, T.; Caicedo Sierra, I.; Wermes, N.; Barbero, M.; Bhat, S.; Breugnon, P.; Chen, Z.; Godiot, S.; Pangaud, P.; Rozanov, A.

    2018-01-01

    Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.

  14. CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

    CERN Document Server

    Rimoldi, Marco; The ATLAS collaboration

    2017-01-01

    The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detector based on CMOS pixel techology. Such detectors provide charge collection, analog and digital amplification in the same silicon bulk. The radiation hardness is obtained with multiple nested wells that have embedded the CMOS electronics with sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC. A number of alternative solutions have been explored and characterised, and are presented in this document.

  15. CMOS Pixel Development for the ATLAS Experiment at HL-LHC

    CERN Document Server

    Ristic, Branislav; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages (HV-MAPS) and high resistivity wafers (HR-MAPS) for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixels with monolithic or hybrid designs concerning their suitability for high rate, fast timing and high radiation operation at LHC. This paper will discuss recent results on the main candidate technologies and the current development towards a monolithic solution.

  16. Dynamic coherent backscattering mirror

    Energy Technology Data Exchange (ETDEWEB)

    Zeylikovich, I.; Xu, M., E-mail: mxu@fairfield.edu [Physics Department, Fairfield University, Fairfield, CT 06824 (United States)

    2016-02-15

    The phase of multiply scattered light has recently attracted considerable interest. Coherent backscattering is a striking phenomenon of multiple scattered light in which the coherence of light survives multiple scattering in a random medium and is observable in the direction space as an enhancement of the intensity of backscattered light within a cone around the retroreflection direction. Reciprocity also leads to enhancement of backscattering light in the spatial space. The random medium behaves as a reciprocity mirror which robustly converts a diverging incident beam into a converging backscattering one focusing at a conjugate spot in space. Here we first analyze theoretically this coherent backscattering mirror (CBM) phenomenon and then demonstrate the capability of CBM compensating and correcting both static and dynamic phase distortions occurring along the optical path. CBM may offer novel approaches for high speed dynamic phase corrections in optical systems and find applications in sensing and navigation.

  17. Neutral beams for mirrors

    International Nuclear Information System (INIS)

    Fink, J.H.

    1983-01-01

    An important demonstration of negative ion technology is proposed for FY92 in the MFTF-α+T, an upgrade of the Mirror Fusion Test Facility at the Lawrence Livermore National Laboratory. This facility calls for 200-keV negative ions to form neutral beams that generate sloshing ions in the reactor end plugs. Three different beam lines are considered for this application. Their advantages and disadvantages are discussed

  18. Mirror reactor studies

    International Nuclear Information System (INIS)

    Moir, R.W.; Barr, W.L.; Bender, D.J.

    1976-01-01

    Design studies of a fusion mirror reactor, a fusion-fission mirror reactor, and two small mirror reactors are summarized. The fusion reactor uses 150-keV neutral-beam injectors based on the acceleration of negative ions. The injectors provide over 1 GW of continuous power at an efficiency greater than 80 percent. The fusion reactor has three-stage, modularized, Venetian blind, plasma direct converter with a predicted efficiency of 59 percent and a new concept for removal of the lune-shaped blanket: a crane is brought between the two halves of the Yin-Yang magnet, which are separated by a float. The design has desirable features such as steady-state operation, minimal impurity problems, and low first-wall thermal stress. The major disadvantage is low Q resulting in high recirculating power and hence high cost of electrical power. However, the direct capital cost per unit of gross electrical power is reasonable [$1000/kW(e)

  19. Mirror-Image Equivalence and Interhemispheric Mirror-Image Reversal.

    Science.gov (United States)

    Corballis, Michael C

    2018-01-01

    Mirror-image confusions are common, especially in children and in some cases of neurological impairment. They can be a special impediment in activities such as reading and writing directional scripts, where mirror-image patterns (such as b and d ) must be distinguished. Treating mirror images as equivalent, though, can also be adaptive in the natural world, which carries no systematic left-right bias and where the same object or event can appear in opposite viewpoints. Mirror-image equivalence and confusion are natural consequences of a bilaterally symmetrical brain. In the course of learning, mirror-image equivalence may be established through a process of symmetrization, achieved through homotopic interhemispheric exchange in the formation of memory circuits. Such circuits would not distinguish between mirror images. Learning to discriminate mirror-image discriminations may depend either on existing brain asymmetries, or on extensive learning overriding the symmetrization process. The balance between mirror-image equivalence and mirror-image discrimination may nevertheless be precarious, with spontaneous confusions or reversals, such as mirror writing, sometimes appearing naturally or as a manifestation of conditions like dyslexia.

  20. Mirror-Image Equivalence and Interhemispheric Mirror-Image Reversal

    Directory of Open Access Journals (Sweden)

    Michael C. Corballis

    2018-04-01

    Full Text Available Mirror-image confusions are common, especially in children and in some cases of neurological impairment. They can be a special impediment in activities such as reading and writing directional scripts, where mirror-image patterns (such as b and d must be distinguished. Treating mirror images as equivalent, though, can also be adaptive in the natural world, which carries no systematic left-right bias and where the same object or event can appear in opposite viewpoints. Mirror-image equivalence and confusion are natural consequences of a bilaterally symmetrical brain. In the course of learning, mirror-image equivalence may be established through a process of symmetrization, achieved through homotopic interhemispheric exchange in the formation of memory circuits. Such circuits would not distinguish between mirror images. Learning to discriminate mirror-image discriminations may depend either on existing brain asymmetries, or on extensive learning overriding the symmetrization process. The balance between mirror-image equivalence and mirror-image discrimination may nevertheless be precarious, with spontaneous confusions or reversals, such as mirror writing, sometimes appearing naturally or as a manifestation of conditions like dyslexia.

  1. Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection.

    Science.gov (United States)

    Nasri, Bayan; Wu, Ting; Alharbi, Abdullah; You, Kae-Dyi; Gupta, Mayank; Sebastian, Sunit P; Kiani, Roozbeh; Shahrjerdi, Davood

    2017-12-01

    We introduce a hybrid CMOS-graphene sensor array for subsecond measurement of dopamine via fast-scan cyclic voltammetry (FSCV). The prototype chip has four independent CMOS readout channels, fabricated in a 65-nm process. Using planar multilayer graphene as biologically compatible sensing material enables integration of miniaturized sensing electrodes directly above the readout channels. Taking advantage of the chemical specificity of FSCV, we introduce a region of interest technique, which subtracts a large portion of the background current using a programmable low-noise constant current at about the redox potentials. We demonstrate the utility of this feature for enhancing the sensitivity by measuring the sensor response to a known dopamine concentration in vitro at three different scan rates. This strategy further allows us to significantly reduce the dynamic range requirements of the analog-to-digital converter (ADC) without compromising the measurement accuracy. We show that an integrating dual-slope ADC is adequate for digitizing the background-subtracted current. The ADC operates at a sampling frequency of 5-10 kHz and has an effective resolution of about 60 pA, which corresponds to a theoretical dopamine detection limit of about 6 nM. Our hybrid sensing platform offers an effective solution for implementing next-generation FSCV devices that can enable precise recording of dopamine signaling in vivo on a large scale.

  2. A Standard CMOS Humidity Sensor without Post-Processing

    OpenAIRE

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

  3. Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

    Directory of Open Access Journals (Sweden)

    Zhen Li

    2015-09-01

    Full Text Available This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed.

  4. A 10-bit 100 MSamples/s BiCMOS D/A Converter

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Herald Holger; Tunheim, Svein Anders

    1997-01-01

    This paper presents a 10-bit Digital-to-Analogue Converter (DAC) based on the current steering principle. The DAC is processed in a 0.8 micron BiCMOS process and is designed to operate at a sampling rate of 100MSamples/s. The DAC is intended for applications using direct digital synthesis...

  5. Technology CAD for germanium CMOS circuit

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

    2006-12-15

    Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

  6. Technology CAD for germanium CMOS circuit

    International Nuclear Information System (INIS)

    Saha, A.R.; Maiti, C.K.

    2006-01-01

    Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

  7. Ion traps fabricated in a CMOS foundry

    Energy Technology Data Exchange (ETDEWEB)

    Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2014-07-28

    We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

  8. Integrated 60GHz RF beamforming in CMOS

    CERN Document Server

    Yu, Yikun; van Roermund, Arthur H M

    2011-01-01

    ""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

  9. Challenges & Roadmap for Beyond CMOS Computing Simulation.

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, Arun F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Frank, Michael P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    Simulating HPC systems is a difficult task and the emergence of “Beyond CMOS” architectures and execution models will increase that difficulty. This document presents a “tutorial” on some of the simulation challenges faced by conventional and non-conventional architectures (Section 1) and goals and requirements for simulating Beyond CMOS systems (Section 2). These provide background for proposed short- and long-term roadmaps for simulation efforts at Sandia (Sections 3 and 4). Additionally, a brief explanation of a proof-of-concept integration of a Beyond CMOS architectural simulator is presented (Section 2.3).

  10. Radiation-hardened bulk CMOS technology

    International Nuclear Information System (INIS)

    Dawes, W.R. Jr.; Habing, D.H.

    1979-01-01

    The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

  11. Do 'literate' pigeons (Columba livia) show mirror-word generalization?

    Science.gov (United States)

    Scarf, Damian; Corballis, Michael C; Güntürkün, Onur; Colombo, Michael

    2017-09-01

    Many children pass through a mirror stage in reading, where they write individual letters or digits in mirror and find it difficult to correctly utilize letters that are mirror images of one another (e.g., b and d). This phenomenon is thought to reflect the fact that the brain does not naturally discriminate left from right. Indeed, it has been argued that reading acquisition involves the inhibition of this default process. In the current study, we tested the ability of literate pigeons, which had learned to discriminate between 30 and 62 words from 7832 nonwords, to discriminate between words and their mirror counterparts. Subjects were sensitive to the left-right orientation of the individual letters, but not the order of letters within a word. This finding may reflect the fact that, in the absence of human-unique top-down processes, the inhibition of mirror generalization may be limited.

  12. Thermal effects on beryllium mirrors

    International Nuclear Information System (INIS)

    Weinswig, S.

    1989-01-01

    Beryllium is probably the most frequently used material for spaceborne system scan mirrors. Beryllium's properties include lightweightedness, high Young's modulus, high stiffness value, high resonance value. As an optical surface, beryllium is usually nickel plated in order to produce a higher quality surface. This process leads to the beryllium mirror acting like a bimetallic device. The mirror's deformation due to the bimetallic property can possibly degrade the performance of the associated optical system. As large space borne systems are designed and as temperature considerations become more crucial in the instruments, the concern about temporal deformation of the scan mirrors becomes a prime consideration. Therefore, two sets of tests have been conducted in order to ascertain the thermal effects on nickel plated beryllium mirrors. These tests are categorized. The purpose of this paper is to present the values of the bimetallic effect on typical nickel plated beryllium mirrors

  13. On the integration of ultrananocrystalline diamond (UNCD with CMOS chip

    Directory of Open Access Journals (Sweden)

    Hongyi Mi

    2017-03-01

    Full Text Available A low temperature deposition of high quality ultrananocrystalline diamond (UNCD film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

  14. Mirror symmetry II

    CERN Document Server

    Greene, Brian R

    1997-01-01

    Mirror symmetry has undergone dramatic progress during the last five years. Tremendous insight has been gained on a number of key issues. This volume surveys these results. Some of the contributions in this work have appeared elsewhere, while others were written specifically for this collection. The areas covered are organized into 4 sections, and each presents papers by both physicists and mathematicians. This volume collects the most important developments that have taken place in mathematical physics since 1991. It is an essential reference tool for both mathematics and physics libraries and for students of physics and mathematics.

  15. Introduction: Mirrors of Passing

    DEFF Research Database (Denmark)

    Seebach, Sophie Hooge; Willerslev, Rane

    How is death, time, and materiality interconnected? How to approach an understanding of the world of the dead? In this introduction, we seek to understand how the experience of material decay, of the death of those around us, makes us aware of the passing of time. Through the literary lens of Neil...... Gaiman’s The Graveyard Book, we explore how the world of the dead and the world of the living can intersect; how time and materiality shifts and changes depending on who experiences it. These revelations, based on fiction, provide a mirror through which the reader can experience the varied chapters...

  16. Complex/Symplectic Mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Chuang, Wu-yen; Kachru, Shamit; /Stanford U., ITP /SLAC; Tomasiello, Alessandro; /Stanford U., ITP

    2005-10-28

    We construct a class of symplectic non-Kaehler and complex non-Kaehler string theory vacua, extending and providing evidence for an earlier suggestion by Polchinski and Strominger. The class admits a mirror pairing by construction. Comparing hints from a variety of sources, including ten-dimensional supergravity and KK reduction on SU(3)-structure manifolds, suggests a picture in which string theory extends Reid's fantasy to connect classes of both complex non-Kaehler and symplectic non-Kaehler manifolds.

  17. Trieste lectures on mirror symmetry

    Energy Technology Data Exchange (ETDEWEB)

    Hori, K [Department of Physics and Department of Mathematics, University of Toronto, Toronto, Ontario (Canada)

    2003-08-15

    These are pedagogical lectures on mirror symmetry given at the Spring School in ICTP, Trieste, March 2002. The focus is placed on worldsheet descriptions of the physics related to mirror symmetry. We start with the introduction to general aspects of (2,2) supersymmetric field theories in 1 + 1 dimensions. We next move on to the study and applications of linear sigma model. Finally, we provide a proof of mirror symmetry in a class of models. (author)

  18. Mirror Fusion Test Facility (MFTF)

    International Nuclear Information System (INIS)

    Thomassen, K.I.

    1978-01-01

    A large, new Mirror Fusion Test Facility is under construction at LLL. Begun in FY78 it will be completed at the end of FY78 at a cost of $94.2M. This facility gives the mirror program the flexibility to explore mirror confinement principles at a signficant scale and advances the technology of large reactor-like devices. The role of MFTF in the LLL program is described here

  19. Fully depleted CMOS pixel sensor development and potential applications

    Energy Technology Data Exchange (ETDEWEB)

    Baudot, J.; Kachel, M. [Universite de Strasbourg, IPHC, 23 rue du Loess 67037 Strasbourg (France); CNRS, UMR7178, 67037 Strasbourg (France)

    2015-07-01

    CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) high resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a

  20. Low noise monolithic CMOS front end electronics

    International Nuclear Information System (INIS)

    Lutz, G.; Bergmann, H.; Holl, P.; Manfredi, P.F.

    1987-01-01

    Design considerations for low noise charge measurement and their application in CMOS electronics are described. The amplifier driver combination whose noise performance has been measured in detail as well as the analog multiplexing silicon strip detector readout electronics are designed with low power consumption and can be operated in pulsed mode so as to reduce heat dissipation even further in many applications. (orig.)

  1. CMOS VHF transconductance-C lowpass filter

    NARCIS (Netherlands)

    Nauta, Bram

    1990-01-01

    Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response

  2. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

  3. CMOS digital integrated circuits a first course

    CERN Document Server

    Hawkins, Charles; Zarkesh-Ha, Payman

    2016-01-01

    This book teaches the fundamentals of modern CMOS technology and covers equal treatment to both types of MOSFET transistors that make up computer circuits; power properties of logic circuits; physical and electrical properties of metals; introduction of timing circuit electronics and introduction of layout; real-world examples and problem sets.

  4. A 24GHz Radar Receiver in CMOS

    NARCIS (Netherlands)

    Kwok, K.C.

    2015-01-01

    This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

  5. Toward CMOS image sensor based glucose monitoring.

    Science.gov (United States)

    Devadhasan, Jasmine Pramila; Kim, Sanghyo

    2012-09-07

    Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

  6. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  7. Plasma cleaning of ITER first mirrors

    Science.gov (United States)

    Moser, L.; Marot, L.; Steiner, R.; Reichle, R.; Leipold, F.; Vorpahl, C.; Le Guern, F.; Walach, U.; Alberti, S.; Furno, I.; Yan, R.; Peng, J.; Ben Yaala, M.; Meyer, E.

    2017-12-01

    Nuclear fusion is an extremely attractive option for future generations to compete with the strong increase in energy consumption. Proper control of the fusion plasma is mandatory to reach the ambitious objectives set while preserving the machine’s integrity, which requests a large number of plasma diagnostic systems. Due to the large neutron flux expected in the International Thermonuclear Experimental Reactor (ITER), regular windows or fibre optics are unusable and were replaced by so-called metallic first mirrors (FMs) embedded in the neutron shielding, forming an optical labyrinth. Materials eroded from the first wall reactor through physical or chemical sputtering will migrate and will be deposited onto mirrors. Mirrors subject to net deposition will suffer from reflectivity losses due to the deposition of impurities. Cleaning systems of metallic FMs are required in more than 20 optical diagnostic systems in ITER. Plasma cleaning using radio frequency (RF) generated plasmas is currently being considered the most promising in situ cleaning technique. An update of recent results obtained with this technique will be presented. These include the demonstration of cleaning of several deposit types (beryllium, tungsten and beryllium proxy, i.e. aluminium) at 13.56 or 60 MHz as well as large scale cleaning (mirror size: 200 × 300 mm2). Tests under a strong magnetic field up to 3.5 T in laboratory and first experiments of RF plasma cleaning in EAST tokamak will also be discussed. A specific focus will be given on repetitive cleaning experiments performed on several FM material candidates.

  8. Edge diagnostics for tandem mirror machines

    International Nuclear Information System (INIS)

    Allen, S.L.

    1984-01-01

    The edge plasma in a tandem mirror machine shields the plasma core from cold neutral gas and impurities. A variety of diagnostics are used to measure the fueling, shielding, and confinement of the edge plasma in both the end plug and central cell regions. Fast ion gauges and residual gas analyzers measure the gas pressure and composition outside of the plasma. An array of Langmuir probes is used to measure the electron density and temperature. Extreme ultraviolet (euv) and visible spectroscopy are used to measure both the impurity and deuterium densities and to estimate the shielding factor for the core plasma. The linear geometry of a tandem mirror also allows direct measurements of the edge plasma by sampling the ions and electrons lost but the ends of the machine. Representative data obtained by these diagnostics during operation of the Tandem Mirror Experiment (TMX) and Tandem Mirror Experiment-Upgrade (TMX-U) experiments are presented. Diagnostics that are currently being developed to diagnose the edge plasma are also discussed

  9. CMOS MEMS capacitive absolute pressure sensor

    International Nuclear Information System (INIS)

    Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

    2013-01-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

  10. Overview of CMOS process and design options for image sensor dedicated to space applications

    Science.gov (United States)

    Martin-Gonthier, P.; Magnan, P.; Corbiere, F.

    2005-10-01

    With the growth of huge volume markets (mobile phones, digital cameras...) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain. Space applications can of course benefit from these improvements. To illustrate this evolution, this paper reports results from three technologies that have been evaluated with test vehicles composed of several sub arrays designed with some space applications as target. These three technologies are CMOS standard, improved and sensor optimized process in 0.35μm generation. Measurements are focussed on quantum efficiency, dark current, conversion gain and noise. Other measurements such as Modulation Transfer Function (MTF) and crosstalk are depicted in [1]. A comparison between results has been done and three categories of CMOS process for image sensors have been listed. Radiation tolerance has been also studied for the CMOS improved process in the way of hardening the imager by design. Results at 4, 15, 25 and 50 krad prove a good ionizing dose radiation tolerance applying specific techniques.

  11. Optimization of ultra-low-power CMOS transistors

    International Nuclear Information System (INIS)

    Stockinger, M.

    2000-01-01

    Ultra-low-power CMOS integrated circuits have constantly gained importance due to the fast growing portable electronics market. High-performance applications like mobile telephones ask for high-speed computations and low stand-by power consumption to increase the actual operating time. This means that transistors with low leakage currents and high drive currents have to be provided. Common fabrication methods will soon reach their limits if the on-chip feature size of CMOS technology continues to shrink at this very fast rate. New device architectures will help to keep track with the roadmap of the semiconductor industry. Especially doping profiles offer much freedom for performance improvements as they determine the 'inner functioning' of a transistor. In this work automated doping profile optimization is performed on MOS transistors within the TCAD framework SIESTA. The doping between and under the source/drain wells is discretized on an orthogonal optimization grid facilitating almost arbitrary two-dimensional shapes. A linear optimizer issued to find the optimum doping profile by variation of the doping parameters utilizing numerical device simulations with MINIMOS-NT. Gaussian functions are used in further optimization runs to make the doping profiles smooth. Two device generations are considered, one with 0.25 μm, the other with 0.1 μm gate length. The device geometries and source/drain doping profiles are kept fixed during optimization and supply voltages are chosen suitable for ultra-low-power purposes. In a first optimization study the drive current of NMOS transistors is maximized while keeping the leakage current below a limit of 1 pA/μm. This results in peaking channel doping devices (PCD) with narrow doping peaks placed asymmetrically in the channel. Drive current improvements of 45 % and 71 % for the 0.25 μm and 0.1 μm devices, respectively, are achieved compared to uniformly doped devices. The PCD device is studied in detail and explanations for

  12. Mirror profile optimization for nano-focusing KB mirror

    International Nuclear Information System (INIS)

    Zhang Lin; Baker, Robert; Barrett, Ray; Cloetens, Peter; Dabin, Yves

    2010-01-01

    A KB focusing mirror width profile has been optimized to achieve nano-focusing for the nano-imaging end-station ID22NI at the ESRF. The complete mirror and flexure bender assembly has been modeled in 3D with finite element analysis using ANSYS. Bender stiffness, anticlastic effects and geometrical non-linear effects have been considered. Various points have been studied: anisotropy and crystal orientation, stress in the mirror and bender, actuator resolution and the mirror-bender adhesive bonding... Extremely high performance of the mirror is expected with residual slope error smaller than 0.6 μrad, peak-to-valley, compared to the bent slope of 3000 μrad.

  13. Neutron irradiation test of depleted CMOS pixel detector prototypes

    International Nuclear Information System (INIS)

    Mandić, I.; Cindro, V.; Gorišek, A.; Hiti, B.; Kramberger, G.; Mikuž, M.; Zavrtanik, M.; Hemperek, T.; Daas, M.; Hügging, F.; Krüger, H.; Pohl, D.-L.; Wermes, N.; Gonella, L.

    2017-01-01

    Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kΩ cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1 · 10 13 n/cm 2 and 5 · 10 13 n/cm 2 and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1 · 10 15 n/cm 2 is more than 50 μm at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments.

  14. CMOS-TDI detector technology for reconnaissance application

    Science.gov (United States)

    Eckardt, Andreas; Reulke, Ralf; Jung, Melanie; Sengebusch, Karsten

    2014-10-01

    The Institute of Optical Sensor Systems (OS) at the Robotics and Mechatronics Center of the German Aerospace Center (DLR) has more than 30 years of experience with high-resolution imaging technology. This paper shows the institute's scientific results of the leading-edge detector design CMOS in a TDI (Time Delay and Integration) architecture. This project includes the technological design of future high or multi-spectral resolution spaceborne instruments and the possibility of higher integration. DLR OS and the Fraunhofer Institute for Microelectronic Circuits and Systems (IMS) in Duisburg were driving the technology of new detectors and the FPA design for future projects, new manufacturing accuracy and on-chip processing capability in order to keep pace with the ambitious scientific and user requirements. In combination with the engineering research, the current generation of space borne sensor systems is focusing on VIS/NIR high spectral resolution to meet the requirements on earth and planetary observation systems. The combination of large-swath and high-spectral resolution with intelligent synchronization control, fast-readout ADC (analog digital converter) chains and new focal-plane concepts opens the door to new remote-sensing and smart deep-space instruments. The paper gives an overview of the detector development status and verification program at DLR, as well as of new control possibilities for CMOS-TDI detectors in synchronization control mode.

  15. Improvement to the signaling interface for CMOS pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhan, E-mail: sz1134@163.com [Dalian University of Technology, No.2 Linggong Road, 116024 Dalian (China); Tang, Zhenan, E-mail: tangza@dlut.edu.cn [Dalian University of Technology, No.2 Linggong Road, 116024 Dalian (China); Feng, Chong [Dalian University of Technology, No.2 Linggong Road, 116024 Dalian (China); Dalian Minzu University, No.18 Liaohe West Road, 116600 Dalian (China); Cai, Hong [Dalian University of Technology, No.2 Linggong Road, 116024 Dalian (China)

    2016-10-01

    The development of the readout speed of CMOS pixel sensors (CPS) is motivated by the demanding requirements of future high energy physics (HEP) experiments. As the interface between CPS and the data acquisition (DAQ) system, which inputs clock from the DAQ system and outputs data from CPS, the signaling interface should also be improved in terms of data rates. Meanwhile, the power consumption of the signaling interface should be maintained as low as possible. Consequently, a reduced swing differential signaling (RSDS) driver was adopted instead of a low-voltage differential signaling (LVDS) driver to transmit data from CPS to the DAQ system. In order to increase the capability of data rates, a serial source termination technique was employed. A LVDS/RSDS receiver was employed for transmitting clock from the DAQ system to CPS. A new method of generating hysteresis and a special current comparator were used to achieve a higher speed with lower power consumption. The signaling interface was designed and submitted for fabrication in a 0.18 µm CMOS image sensor (CIS) process. Measurement results indicate that the RSDS driver and the LVDS receiver can operate correctly at a data rate of 2 Gb/s with a power consumption of 19.1 mW.

  16. Development of mirror coatings for gravitational-wave detectors

    Science.gov (United States)

    Steinlechner, J.

    2018-05-01

    Gravitational waves are detected by measuring length changes between mirrors in the arms of kilometre-long Michelson interferometers. Brownian thermal noise arising from thermal vibrations of the mirrors can limit the sensitivity to distance changes between the mirrors, and, therefore, the ability to measure gravitational-wave signals. Thermal noise arising from the highly reflective mirror coatings will limit the sensitivity both of current detectors (when they reach design performance) and of planned future detectors. Therefore, the development of coatings with low thermal noise, which at the same time meet strict optical requirements, is of great importance. This article gives an overview of the current status of coatings and of the different approaches for coating improvement. This article is part of a discussion meeting issue `The promises of gravitational-wave astronomy'.

  17. Virtual Mirror gaming in libraries

    NARCIS (Netherlands)

    Speelman, M.; Kröse, B.; Nijholt, A.; Poppe, R.

    2008-01-01

    This paper presents a study on a natural interface game in the context of a library. We developed a camera-based Virtual Mirror (VM) game, in which the player can see himself on the screen as if he looks at a mirror image. We present an overview of the different aspects of VM games and technologies

  18. TCV mirrors cleaned by plasma

    Directory of Open Access Journals (Sweden)

    L. Marot

    2017-08-01

    Full Text Available Metallic mirrors exposed in TCV tokamak were cleaned by plasma in laboratory. A gold (Au mirror was deposited with 185–285nm of amorphous carbon (aC:D film coming from the carbon tiles of TCV. Another molybdenum (Mo mirror had a thicker deposit due to a different location within the tokamak. The thickness measurements were carried out using ellipsometry and the reflectivity measurements performed by spectrophotometry revealed a decrease of the specular reflectivity in the entire range (250–2500nm for the Mo mirror and specifically in the visible spectrum for the Au. Comparison of the simulated reflectivity using a refractive index of 1.5 and a Cauchy model for the aC:D gives good confidence on the estimated film thickness. Plasma cleaning using radio frequency directly applied to a metallic plate where the mirrors were fixed demonstrated the ability to remove the carbon deposits. A mixture of 50% hydrogen and 50% helium was used with a −200V self-bias. Due to the low sputtering yield of He and the low chemical erosion of hydrogen leading to volatile molecules, 20h of cleaning were needed for Au mirror and more than 60h for Mo mirror. Recovery of the reflectivity was not complete for the Au mirror most likely due to damage of the surface during tokamak exposure (breakdown phenomena.

  19. Mirroring patients – or not

    DEFF Research Database (Denmark)

    Davidsen, Annette Sofie; Fosgerau, Christina Fogtmann

    2015-01-01

    on studies of imitative behaviour within linguistics and psychology, we argue that interactional mirroring is an important aspect of displaying implicit mentalization. We aimed to explore if, and in that case how, mirroring is displayed by general practitioners (GPs) and psychiatrists in consultations...... with patients with depression. We wanted to see how implicit mentalizing unfolds in physician–patient interactions. Consultations were videorecorded and analysed within the framework of conversation analysis. GPs and psychiatrists differed substantially in their propensity to mirror body movements and verbal...... and acoustic features of speech. GPs mirrored their patients more than psychiatrists in all modalities and were more flexible in their interactional behaviour. Psychiatrists seemed more static, regardless of the emotionality displayed by patients. Implicitly mirroring and attuning to patients could signify...

  20. LLL mirror fusion program: summary

    International Nuclear Information System (INIS)

    Fowler, T.K.

    1977-01-01

    During 1976, new Mirror Program plans have been laid out to take into account the significant advances during the last 18 months. The program is now focused on two new mirror concepts, field reversal and the tandem mirror, that can obtain high Q, defined as the ratio of fusion power output to the neutral-beam power injected to sustain the reaction. Theoretically, both concepts can attain Q = 5 or more, as compared to Q = 1 in previous mirror designs. Experimental planning for the next 5 years is complete in broad outline, and we are turning attention to what additional steps are necessary to reach our long-range goal of an experimental mirror reactor operating by 1990. Highlights of the events that have led to the above circumstance are listed, and experimental program plans are outlined

  1. Genetics Home Reference: congenital mirror movement disorder

    Science.gov (United States)

    ... Health Conditions Congenital mirror movement disorder Congenital mirror movement disorder Printable PDF Open All Close All Enable ... view the expand/collapse boxes. Description Congenital mirror movement disorder is a condition in which intentional movements ...

  2. A 3 A sink/source current fast transient response low-dropout G{sub m} driven linear regulator

    Energy Technology Data Exchange (ETDEWEB)

    Chu Xiuqin; Li Qingwei; Lai Xinquan; Yuan Bing [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China); Li Yanming [School of Electronic and Control Engineering, Chang' an University, Xi' an 710064 (China); Zhao Yongrui, E-mail: liqw309@163.com, E-mail: xqchu@mail.xidian.edu.cn [Key Laboratory of High-Speed Circuit Design and EMC, Ministry of Education, Xidian University, Xi' an 710071 (China)

    2011-06-15

    A 3 A sink/source G{sub m}-driven CMOS low-dropout regulator (LDO), specially designed for low input voltage and low cost, is presented by utilizing the structure of a current mirror G{sub m} (transconductance) driving technique, which provides high stability as well as a fast load transient response. The proposed LDO was fabricated by a 0.5 {mu}m standard CMOS process, and the die size is as small as 1.0 mm{sup 2}. The proposed LDO dissipates 220 {mu}A of quiescent current in no-load conditions and is able to deliver up to 3 A of load current. The measured results show that the output voltage can be resumed within 2 {mu}s with a less than 1 mV overshoot and undershoot in the output current step from -1.8 to 1.8 A with a 0.1 {mu}s rising and falling time at three 10 {mu}F ceramic capacitors. (semiconductor integrated circuits)

  3. A 3 A sink/source current fast transient response low-dropout Gm driven linear regulator

    International Nuclear Information System (INIS)

    Chu Xiuqin; Li Qingwei; Lai Xinquan; Yuan Bing; Li Yanming; Zhao Yongrui

    2011-01-01

    A 3 A sink/source G m -driven CMOS low-dropout regulator (LDO), specially designed for low input voltage and low cost, is presented by utilizing the structure of a current mirror G m (transconductance) driving technique, which provides high stability as well as a fast load transient response. The proposed LDO was fabricated by a 0.5 μm standard CMOS process, and the die size is as small as 1.0 mm 2 . The proposed LDO dissipates 220 μA of quiescent current in no-load conditions and is able to deliver up to 3 A of load current. The measured results show that the output voltage can be resumed within 2 μs with a less than 1 mV overshoot and undershoot in the output current step from -1.8 to 1.8 A with a 0.1 μs rising and falling time at three 10 μF ceramic capacitors. (semiconductor integrated circuits)

  4. Distributed sensing signal analysis of deformable plate/membrane mirrors

    Science.gov (United States)

    Lu, Yifan; Yue, Honghao; Deng, Zongquan; Tzou, Hornsen

    2017-11-01

    Deformable optical mirrors usually play key roles in aerospace and optical structural systems applied to space telescopes, radars, solar collectors, communication antennas, etc. Limited by the payload capacity of current launch vehicles, the deformable mirrors should be lightweight and are generally made of ultra-thin plates or even membranes. These plate/membrane mirrors are susceptible to external excitations and this may lead to surface inaccuracy and jeopardize relevant working performance. In order to investigate the modal vibration characteristics of the mirror, a piezoelectric layer is fully laminated on its non-reflective side to serve as sensors. The piezoelectric layer is segmented into infinitesimal elements so that microscopic distributed sensing signals can be explored. In this paper, the deformable mirror is modeled as a pre-tensioned plate and membrane respectively and sensing signal distributions of the two models are compared. Different pre-tensioning forces are also applied to reveal the tension effects on the mode shape and sensing signals of the mirror. Analytical results in this study could be used as guideline of optimal sensor/actuator placement for deformable space mirrors.

  5. Review Essay: Mirror Neurons in the Discourse of Social Sciences

    Directory of Open Access Journals (Sweden)

    Henning Pätzold

    2010-08-01

    Full Text Available Since their discovery in the mid-1990s, mirror neurons have been the subject of continuous discussions in neurosciences as well as in the social sciences. The interest of scientists outside the life sciences in mirror neurons is primarily based on the fact that mirror neurons not only have epistemological meaning, but also seem to play an important role in processes of social insights and emotions, like empathy. With her book, Nadia ZABOURA provides a new contribution from a social and cultural sciences point of view, which critically reflects the discussion on mirror neurons and its consequences on the social sciences and humanities. Starting off from philosophical approaches to the mind-matter-dualism and the question of intersubjectivity, she explores the meaning of mirror neurons for the debate on empathy and communication. By discussing concepts of philosophy and communication sciences as well as current knowledge on mirror neurons, she concludes that they do not provide a stable basis for any material reductionism, which would explain phenomena like intersubjectivity only by recordable neuronal processes. The book refers to a variety of related theories (ranging from DESCARTES through to MEAD and TOMASELLO; these references are inspiring, yet they stay cursory for the most part. All in all the book offers avenues for further inquiry on the issues in focus, and can rather be taken as "tour of suggestions" through the topical field of mirror neurons and the related research. URN: urn:nbn:de:0114-fqs1003245

  6. Prototyping iridium coated mirrors for x-ray astronomy

    Science.gov (United States)

    Döhring, Thorsten; Probst, Anne-Catherine; Stollenwerk, Manfred; Emmerich, Florian; Stehlíková, Veronika; Inneman, Adolf

    2017-05-01

    X-ray astronomy uses space-based telescopes to overcome the disturbing absorption of the Earth's atmosphere. The telescope mirrors are operating at grazing incidence angles and are coated with thin metal films of high-Z materials to get sufficient reflectivity for the high-energy radiation to be observed. In addition the optical payload needs to be light-weighted for launcher mass constrains. Within the project JEUMICO, an acronym for "Joint European Mirror Competence", the Aschaffenburg University of Applied Sciences and the Czech Technical University in Prague started a collaboration to develop mirrors for X-ray telescopes. The X-ray telescopes currently developed within this Bavarian- Czech project are of Lobster eye type optical design. Corresponding mirror segments use substrates of flat silicon wafers which are coated with thin iridium films, as this material is promising high reflectivity in the X-ray range of interest. The deposition of the iridium films is based on a magnetron sputtering process. Sputtering with different parameters, especially by variation of the argon gas pressure, leads to iridium films with different properties. In addition to investigations of the uncoated mirror substrates the achieved surface roughness has been studied. Occasional delamination of the iridium films due to high stress levels is prevented by chromium sublayers. Thereby the sputtering parameters are optimized in the context of the expected reflectivity of the coated X-ray mirrors. In near future measurements of the assembled mirror modules optical performances are planned at an X-ray test facility.

  7. Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

    Science.gov (United States)

    Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

    2016-02-01

    Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

  8. Performance simulation and analysis of a CMOS/nano hybrid nanoprocessor system

    International Nuclear Information System (INIS)

    Cabe, Adam C; Das, Shamik

    2009-01-01

    This paper provides detailed simulation results and analysis of the prospective performance of hybrid CMOS/nanoelectronic processor systems based upon the field-programmable nanowire interconnect (FPNI) architecture. To evaluate this architecture, a complete design was developed for an FPNI implementation using 90 nm CMOS with 15 nm wide nanowire interconnects. Detailed simulations of this design illustrate that critical design choices and tradeoffs exist beyond those specified by the architecture. This includes the selection of the types of junction nanodevices, as well as the implementation of low-level circuits. In particular, the simulation results presented here show that only nanodevices with an 'on/off' current ratio of 200 or more are suitable to produce correct system-level behaviour. Furthermore, the design of the CMOS logic gates in the FPNI system must be customized to accommodate the resistances of both 'on'-state and 'off'-state nanodevices. Using these customized designs together with models of suitable nanodevices, additional simulations demonstrate that, relative to conventional 90 nm CMOS FPGA systems, performance gains can be obtained of up to 70% greater speed or up to a ninefold reduction in energy consumption.

  9. High-speed imaging using CMOS image sensor with quasi pixel-wise exposure

    Science.gov (United States)

    Sonoda, T.; Nagahara, H.; Endo, K.; Sugiyama, Y.; Taniguchi, R.

    2017-02-01

    Several recent studies in compressive video sensing have realized scene capture beyond the fundamental trade-off limit between spatial resolution and temporal resolution using random space-time sampling. However, most of these studies showed results for higher frame rate video that were produced by simulation experiments or using an optically simulated random sampling camera, because there are currently no commercially available image sensors with random exposure or sampling capabilities. We fabricated a prototype complementary metal oxide semiconductor (CMOS) image sensor with quasi pixel-wise exposure timing that can realize nonuniform space-time sampling. The prototype sensor can reset exposures independently by columns and fix these amount of exposure by rows for each 8x8 pixel block. This CMOS sensor is not fully controllable via the pixels, and has line-dependent controls, but it offers flexibility when compared with regular CMOS or charge-coupled device sensors with global or rolling shutters. We propose a method to realize pseudo-random sampling for high-speed video acquisition that uses the flexibility of the CMOS sensor. We reconstruct the high-speed video sequence from the images produced by pseudo-random sampling using an over-complete dictionary.

  10. Frontend Receiver Electronics for High Frequency Monolithic CMUT-on-CMOS Imaging Arrays

    Science.gov (United States)

    Gurun, Gokce; Hasler, Paul; Degertekin, F. Levent

    2012-01-01

    This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for high-frequency intravascular ultrasound imaging. A custom 8-inch wafer is fabricated in a 0.35 μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulse-echo measurement. Transducer noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 MHz to 20 MHz. PMID:21859585

  11. Front-end receiver electronics for high-frequency monolithic CMUT-on-CMOS imaging arrays.

    Science.gov (United States)

    Gurun, Gokce; Hasler, Paul; Degertekin, F

    2011-08-01

    This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for highfrequency intravascular ultrasound imaging. A custom 8-inch (20-cm) wafer is fabricated in a 0.35-μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range, and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input-referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulseecho measurement. Transducer-noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 to 20 MHz.

  12. A review on high-resolution CMOS delay lines: towards sub-picosecond jitter performance.

    Science.gov (United States)

    Abdulrazzaq, Bilal I; Abdul Halin, Izhal; Kawahito, Shoji; Sidek, Roslina M; Shafie, Suhaidi; Yunus, Nurul Amziah Md

    2016-01-01

    A review on CMOS delay lines with a focus on the most frequently used techniques for high-resolution delay step is presented. The primary types, specifications, delay circuits, and operating principles are presented. The delay circuits reported in this paper are used for delaying digital inputs and clock signals. The most common analog and digitally-controlled delay elements topologies are presented, focusing on the main delay-tuning strategies. IC variables, namely, process, supply voltage, temperature, and noise sources that affect delay resolution through timing jitter are discussed. The design specifications of these delay elements are also discussed and compared for the common delay line circuits. As a result, the main findings of this paper are highlighting and discussing the followings: the most efficient high-resolution delay line techniques, the trade-off challenge found between CMOS delay lines designed using either analog or digitally-controlled delay elements, the trade-off challenge between delay resolution and delay range and the proposed solutions for this challenge, and how CMOS technology scaling can affect the performance of CMOS delay lines. Moreover, the current trends and efforts used in order to generate output delayed signal with low jitter in the sub-picosecond range are presented.

  13. Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Rizzo, G., E-mail: rizzo@pi.infn.it [Università degli Studi di Pisa (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Pisa (Italy); Comott, D. [Università degli Studi di Bergamo (Italy); Manghisoni, M.; Re, V.; Traversi, G. [Università degli Studi di Bergamo (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Pavia (Italy); Fabbri, L.; Gabrielli, A. [Università degli Studi di Bologna (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Giorgi, F.; Pellegrini, G.; Sbarra, C. [Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Semprini-Cesari, N.; Valentinetti, S.; Villa, M.; Zoccoli, A. [Università degli Studi di Bologna (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Berra, A.; Lietti, D.; Prest, M. [Università dell' Insubria, Como (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano Bicocca (Italy); Bevan, A. [School of Physics and Astronomy, Queen Mary, University of London, London E1 4NS (United Kingdom); Wilson, F. [STFC, Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX (United Kingdom); Beck, G. [School of Physics and Astronomy, Queen Mary, University of London, London E1 4NS (United Kingdom); and others

    2013-08-01

    In the design of the Silicon Vertex Tracker for the high luminosity SuperB collider, very challenging requirements are set by physics and background conditions on its innermost Layer0: small radius (about 1.5 cm), resolution of 10–15μm in both coordinates, low material budget <1%X{sub 0}, and the ability to withstand a background hit rate of several tens of MHz/cm{sup 2}. Thanks to an intense R and D program the development of Deep NWell CMOS MAPS (with the ST Microelectronics 130 nm process) has reached a good level of maturity and allowed for the first time the implementation of thin CMOS sensors with similar functionalities as in hybrid pixels, such as pixel-level sparsification and fast time stamping. Further MAPS performance improvements are currently under investigation with two different approaches: the INMAPS CMOS process, featuring a quadruple well and a high resistivity substrate, and 3D CMOS MAPS, realized with vertical integration technology. In both cases specific features of the processes chosen can improve charge collection efficiency, with respect to a standard DNW MAPS design, and allow to implement a more complex in-pixel logic in order to develop a faster readout architecture. Prototypes of MAPS matrix, suitable for application in the SuperB Layer0, have been realized with the INMAPS 180 nm process and the 130 nm Chartered/Tezzaron 3D process and results of their characterization will be presented in this paper.

  14. CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

    Science.gov (United States)

    Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

    2011-04-01

    In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

  15. Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

    International Nuclear Information System (INIS)

    Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

    2011-01-01

    This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

  16. Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

    CERN Document Server

    El-Khatib, Ziad; Mahmoud, Samy A

    2012-01-01

    This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

  17. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2001-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

  18. Recent developments with CMOS SSPM photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Stapels, Christopher J. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)], E-mail: CStapels@RMDInc.com; Barton, Paul [University of Michigan, Ann Arbor, MI (United States); Johnson, Erik B. [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Wehe, David K. [University of Michigan, Ann Arbor, MI (United States); Dokhale, Purushottam; Shah, Kanai [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Augustine, Frank L. [Augustine Engineering, Encinitas, CA (United States); Christian, James F. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)

    2009-10-21

    Experiments and simulations using various solid-state photomultiplier (SSPM) designs have been performed to evaluate pixel layouts and explore design choices. SPICE simulations of a design for position-sensing SSPMs showed charge division in the resistor network, and anticipated timing performance of the device. The simulation results predict good position information for resistances in the range of 1-5 k{omega} and 150-{omega} preamplifier input impedance. Back-thinning of CMOS devices can possibly increase the fill factor to 100%, improve spectral sensitivity, and allow for the deposition of anti-reflective coatings after fabrication. We report initial results from back illuminating a CMOS SSPM, and single Geiger-mode avalanche photodiode (GPD) pixels, thinned to 50 {mu}m.

  19. Desenvolvimento de uma matriz de portas CMOS

    OpenAIRE

    Jose Geraldo Mendes Taveira

    1991-01-01

    Resumo: É apresentado o projeto de uma matriz deportas CMOS. O capítulo 11 descreve as etapas de projeto, incluindo desde a escolha da topologia das células internas e de interface, o projeto e a simulação elétrica, até a geração do lay-out. Ocaprtulo III apresenta o projeto dos circuitos de aplicação, incluídos para permitir a validação da matriz. Os circuitos de apl icação são : Oscilador em anel e comparador de códigos. A matriz foi difundida no Primeiro Projeto Multi-Usuário CMOS Brasile...

  20. CMOS SPDT switch for WLAN applications

    International Nuclear Information System (INIS)

    Bhuiyan, M A S; Reaz, M B I; Rahman, L F; Minhad, K N

    2015-01-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal. (paper)

  1. Cmos spdt switch for wlan applications

    Science.gov (United States)

    Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

    2015-04-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

  2. Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line

    Science.gov (United States)

    León Pérez, Edgar A. A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader

    2018-05-01

    We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications. He is currently a Postdoctoral Researcher in the Institute of Nanotechnologies of Lyon (INL), INSA de Lyon, France, in the Electronics Department. His current research include indium oxide nanoparticles for non-volatile memory applications, and the integrations of these devices in CMOS BEOL.

  3. Registration of Large Motion Blurred CMOS Images

    Science.gov (United States)

    2017-08-28

    raju@ee.iitm.ac.in - Institution : Indian Institute of Technology (IIT) Madras, India - Mailing Address : Room ESB 307c, Dept. of Electrical ...AFRL-AFOSR-JP-TR-2017-0066 Registration of Large Motion Blurred CMOS Images Ambasamudram Rajagopalan INDIAN INSTITUTE OF TECHNOLOGY MADRAS Final...NUMBER 5f.  WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) INDIAN INSTITUTE OF TECHNOLOGY MADRAS SARDAR PATEL ROAD Chennai, 600036

  4. Advanced CMOS Radiation Effects Testing and Analysis

    Science.gov (United States)

    Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.; hide

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  5. Plasmonic Modulator Using CMOS Compatible Material Platform

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.

    2014-01-01

    In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device l ayout utilizes alternative plas monic materials such as tr ansparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation i...... for integration with existing insulator-metal-insu lator plasmonic waveguides as well as novel photonic/electronic hybrid circuits...

  6. Aging sensor for CMOS memory cells

    OpenAIRE

    Santos, Hugo Fernandes da Silva

    2016-01-01

    Dissertação de Mestrado, Engenharia e Tecnologia, Instituto Superior de Engenharia, Universidade do Algarve, 2016 As memórias Complementary Metal Oxide Semiconductor (CMOS) ocupam uma percentagem de área significativa nos circuitos integrados e, com o desenvolvimento de tecnologias de fabrico a uma escala cada vez mais reduzida, surgem problemas de performance e de fiabilidade. Efeitos como o BTI (Bias Thermal Instability), TDDB (Time Dependent Dielectric Breakdown), HCI (Hot Carrier Injec...

  7. Bio-medical CMOS ICs

    CERN Document Server

    Yoo, Hoi-Jun

    2011-01-01

    This book is based on a graduate course entitled, Ubiquitous Healthcare Circuits and Systems, that was given by one of the editors. It includes an introduction and overview to biomedical ICs and provides information on the current trends in research.

  8. Advanced Mirror & Modelling Technology Development

    Science.gov (United States)

    Effinger, Michael; Stahl, H. Philip; Abplanalp, Laura; Maffett, Steven; Egerman, Robert; Eng, Ron; Arnold, William; Mosier, Gary; Blaurock, Carl

    2014-01-01

    The 2020 Decadal technology survey is starting in 2018. Technology on the shelf at that time will help guide selection to future low risk and low cost missions. The Advanced Mirror Technology Development (AMTD) team has identified development priorities based on science goals and engineering requirements for Ultraviolet Optical near-Infrared (UVOIR) missions in order to contribute to the selection process. One key development identified was lightweight mirror fabrication and testing. A monolithic, stacked, deep core mirror was fused and replicated twice to achieve the desired radius of curvature. It was subsequently successfully polished and tested. A recently awarded second phase to the AMTD project will develop larger mirrors to demonstrate the lateral scaling of the deep core mirror technology. Another key development was rapid modeling for the mirror. One model focused on generating optical and structural model results in minutes instead of months. Many variables could be accounted for regarding the core, face plate and back structure details. A portion of a spacecraft model was also developed. The spacecraft model incorporated direct integration to transform optical path difference to Point Spread Function (PSF) and between PSF to modulation transfer function. The second phase to the project will take the results of the rapid mirror modeler and integrate them into the rapid spacecraft modeler.

  9. Survey of mirror machine reactors

    International Nuclear Information System (INIS)

    Condit, W.C.

    1978-01-01

    The Magnetic Mirror Fusion Program is one of the two main-line fusion efforts in the United States. Starting from the simple axisymmetric mirror concept in the 1950's, the program has successfully overcome gross flute-type instabilities (using minimum-B magnetic fields), and the most serious of the micro-instabilities which plagued it (the drift-cyclotron loss-cone mode). Dense plasmas approaching the temperature range of interest for fusion have been created (n/sub p/ = 10 14 /cc at 10 to 12 keV). At the same time, rather extensive conceptual design studies of possible mirror configurations have led to three principle designs of interest: the standard mirror fission-fusion hybrid, tandem mirror, and the field-reversed mirror. The lectures will discuss these three concepts in turn. There will be no discussion of diagnostics for the mirror machine in these lectures, but typical plasma parameters will be given for each type of machine, and the diagnostic requirements will be apparent. In a working fusion reactor, diagnostics will be required for operational control, and remarks will be made on this subject

  10. Vacuum-Flex Figuring of Primary Telescope Mirrors

    Science.gov (United States)

    Albin, E. F. M.

    2004-12-01

    In the current investigation, details on the construction and performance of a vacuum-flexed (i.e., figured) 51 cm (20-inch) mirror, with a fast f/4 focal ratio, are presented. A vacuum has the chief advantage of being able to pull with a uniform or isotropic stress across a large surface area, which will naturally form a parabolic surface. The essence of the idea is to grind and polish a spherical mirror and then warp or flex it into a near perfect paraboloid, thus avoiding tedious figuring altogether. To date, telescope makers around the globe have experimented with small flexed mirrors with considerable success. In these instances, mirrors have been flexed by exerting tension on a bolt or sponge-pad adhered to the back of the mirror. The prototype mirror consists of two 51 cm disks of plate glass -- each slumped to an f/4 focal ratio. The front-plate (19 mm in thickness) is separated from the back-plate (13 mm in thickness) back a flexible 9.5 mm air filled gasket. Although the rubber gasket makes a fairly good vacuum seal, silicon cement was placed about the outer edge in order to produce a perfectly tight seal. A vacuum of 8 kPa on the back of the mirror resulted in approximately 164 kilograms of negative pressure, which is required to flex the mirror into the required paraboloid. Ronchi test show a nice smooth paraboloid free from astigmatism while foucault zonal measurements display a figure better than 1/20 wave. Preliminary star testing show promising results as well. Vacuum-flexed mirrors may have benefits for both amateur and professional telescope makers alike. A US patent is pending on the aforementioned design.

  11. [Mirror neurons: from anatomy to pathophysiological and therapeutic implications].

    Science.gov (United States)

    Mathon, B

    2013-04-01

    Mirror neurons are a special class of neurons discovered in the 1990s. They respond when we perform an action and also when we see someone else perform that action. They play a role in the pathophysiology of some neuropsychiatric diseases. Mirror neurons have been identified in humans: in Broca's area and the inferior parietal cortex. Their responses are qualitative and selective depending on the observed action. Emotions (including disgust) and empathy seem to operate according to a mirror mechanism. Indeed, the mirror system allows us to encode the sensory experience and to simulate the emotional state of others. This results in our improved identification of the emotions in others. Additionally, mirror neurons can encode an observed action in motor stimuli and allow its reproduction; thus, they are involved in imitation and learning. Current studies are assessing the role of mirror neurons in the pathopysiology of social-behavior disorders, including autism and schizophrenia. Understanding this mirror system will allow us to develop psychotherapy practices based on empathic resonance between the patient and the therapist. Also, some authors report that a passive rehabilitation technique, based on stimulation of the mirror-neuron system, has a beneficial effect in the treatment of patients with post-stroke motor deficits. Mirror neurons are an anatomical entity that enables improved understanding of behavior and emotions, and serves as a base for developing new cognitive therapies. Additional studies are needed to clarify the exact role of this neuronal system in social cognition and its role in the development of some neuropsychiatric diseases. Copyright © 2013 Elsevier Masson SAS. All rights reserved.

  12. MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

    Science.gov (United States)

    Jang, Munseon; Yun, Kwang-Seok

    2017-12-01

    In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

  13. Tandem mirror and field-reversed mirror experiments

    Energy Technology Data Exchange (ETDEWEB)

    Coensgen, F.H.; Simonen, T.C.; Turner, W.C.

    1979-08-21

    This paper is largely devoted to tandem mirror and field-reversed mirror experiments at the Lawrence Livermore Laboratory (LLL), and briefly summarizes results of experiments in which field-reversal has been achieved. In the tandem experiment, high-energy, high-density plasmas (nearly identical to 2XIIB plasmas) are located at each end of a solenoid where plasma ions are electrostatically confined by the high positive poentials arising in the end plug plasma. End plug ions are magnetically confined, and electrons are electrostatically confined by the overall positive potential of the system. The field-reversed mirror reactor consists of several small field-reversed mirror plasmas linked together for economic reasons. In the LLL Beta II experiment, generation of a field-reversed plasma ring will be investigated using a high-energy plasma gun with a transverse radial magnetic field. This plasma will be further heated and sustained by injection of intense, high-energy neutral beams.

  14. CMOS image sensors: State-of-the-art

    Science.gov (United States)

    Theuwissen, Albert J. P.

    2008-09-01

    This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

  15. Edificio Daily Mirror

    Directory of Open Access Journals (Sweden)

    Williams, Owen

    1963-07-01

    Full Text Available The building has 18 levels. The Press occupies the 4 basement floors. The ground floor is taken up with the entrance hall, and an indoor carriage way. A snack bar and the telephone operators are situated on the second floor. The production department and the medical services are located on the third storey, whilst the fourth is occupied by the offices and library. The fifth floor is the beginning of the higher section of the building. This floor and up to including the 11th floor are devoted to office space, except for the 10th storey, which contains the office apartments of the directors and the Council Chamber. Equipment related to various services of the building is housed on the 12th storey. Finally, this tall building constitutes a fine landmark in the London skyline. The Daily Mirror building is outstanding for the appropriate nature, the completeness and the quality of its installations, which thus provide the most widely read paper in the world with outstandingly efficient offices.Este edificio consta de 18 plantas. El cuerpo de Prensa se aloja en los cuatro sótanos; los vestíbulos de entrada y una calzada interior para vehículos se hallan en la planta baja; la primera alberga un snack-bar y centralita telefónica; la segunda, el departamento de producción y centro de asistencia médica, y la tercera, las oficinas y biblioteca principales. La cuarta planta señala el comienzo del bloque alto; esta planta, junto con las quinta, sexta, séptima, octava y décima, están dedicadas a oficinas. La novena contiene las oficinas-apartamentos de los directores y salas de Consejo, y la undécima, la maquinaria para las diversas instalaciones del edificio. La elevada torre constituye un grandioso hito de referencia en esta zona de Londres. El «Daily Mirror» se distingue por el acierto, número y perfección de sus instalaciones, que proporcionan, al periódico de mayor actualidad mundial, las más adecuadas y amplias oficinas modernas.

  16. Kodak AMSD Mirror Development Program

    Science.gov (United States)

    Matthews, Gary; Dahl, Roger; Barrett, David; Bottom, John; Russell, Kevin (Technical Monitor)

    2002-01-01

    The Advanced Mirror System Demonstration Program is developing minor technology for the next generation optical systems. Many of these systems will require extremely lightweight and stable optics due to the overall size of the primary mirror. These segmented, deployable systems require new technology that AMSD is developing. The on-going AMSD program is a critical enabler for Next Generation Space Telescope (NGST) which will start in 2002. The status of Kodak's AMSD mirror and future plans will be discussed with respect to the NGST program.

  17. A CMOS frequency generation module for 60-GHz applications

    International Nuclear Information System (INIS)

    Zhou Chunyuan; Zhang Lei; Wang Hongrui; Qian He

    2012-01-01

    A frequency generation module for 60-GHz transceivers and phased array systems is presented in this paper. It is composed of a divide-by-2 current mode logic divider (CML) and a doubler in push-push configuration. Benefiting from the CML structure and push-push configuration, the proposed frequency generation module has a wide operating frequency range to cover process, voltage, and temperature variation. It is implemented in a 90-nm CMOS process, and occupies a chip area of 0.64 × 0.65 mm 2 including pads. The measurement results show that the designed frequency generation module functions properly with input frequency over 15 GHz to 25 GHz. The whole chip dissipates 12.1 mW from a 1.2-V supply excluding the output buffers. (semiconductor integrated circuits)

  18. Photocatalytic, antifogging mirror

    International Nuclear Information System (INIS)

    Takagi, K.; Makimoto, T.; Hiraiwa, H.; Negishi, T.

    2001-01-01

    This article is about the coating of thin titanium dioxide film by sputter deposition. When irradiated with solar light, thin titanium dioxide film exhibits high oxidizing power and provides sterilizing, cleaning, decomposing, and hydrophylic effects. This technique has already been used for coating building walls by the sol-gel method and by others and has been partly commercialized to make automotive sideview mirrors. There have been no practical applications of the sputter deposition method so far, but establishment of the coating method is expected because of its excellent properties of film production techniques such as film thickness uniformity, film quality durability, and freedom from environmental pollution. In this article we discuss the establishment of the method of evaluating the quality of thin titanium dioxide film, establishment of sputter-deposition conditions, and the results of observation by x-ray diffraction and atomic force microscopy of the thin film. It was found that titanium dioxide films, 200 nm or more in thickness, have the above mentioned performance and that sputter deposition allows the film to form without heating

  19. Stabilized thermally compensated mirror

    International Nuclear Information System (INIS)

    Dunn, C. III; Tobin, R.D.; Bergstreser, N.E.; Heinz, T.A.

    1975-01-01

    A thermally compensated mirror is described that is formed by a laminated structure. The structure is comprised of a front plate having a reflective front surface and having a plurality of grooves formed in the rear surface for conducting coolant fluid in heat exchanging relation with said reflective surface, a rear plate having coolant inlet and coolant outlet openings extending therethrough, a minimum temperature plate interposed between said front and rear plates and formed with a plurality of coolant distribution passageways coupled to receive coolant fluid from said coolant inlet and oriented to distribute said coolant fluid in a manner to establish a minimum temperature plane parallel to said reflective surface, a temperature stabilization plate interposed between said front plate and said minimum temperature plate and formed with a plurality of coolant distribution channels coupled to receive said coolant fluid after said coolant fluid has passed in heat exchanging relation with said reflective surface and oriented to distribute said coolant fluid in a manner to establish a uniform temperature plane parallel to said reflective surface, and means for circulating said coolant fluid through said structure in a predetermined path. (U.S.)

  20. Europe in the Balkan mirror

    Directory of Open Access Journals (Sweden)

    Milutinović Zoran

    2015-01-01

    Full Text Available The article discusses the three dominant, Europe-wide, constructions of Europe in the nineteenth and twentieth centuries, and claims that all three found their proponents in the Balkans in the same period, while no specifically Balkan construction of Europe can be identified. The discourses which constructed Europe were transnational, and every search for national discourses must recognize that they are always fractured and contradictory, composed of various elements originating in Europe-wide discourses on Europe. Throughout this period the dominant discourse of Europe was shaped by the discourse of modernity and modernization, not only in Europe but in other parts of the globe as well. Several commentators have already noted that the current challenge of the interwar construction of Europe - peace, prosperity, democracy and human rights - mirrors the crisis of Yugoslavia, and many examples point to the unsustainability of this construction at the beginning of the twenty-first century. Gadamer’s hermeneutics offers a valuable lesson in humility and defines the oft-repeated phrase of “belonging together” as listening to the other in the belief that the other may be right, which should be taken as a starting point for any future construction of Europe.

  1. Kodak AMSD Concept Overview and Status (Semi-Rigid Mirror with Sparse Actuators)

    Science.gov (United States)

    Matthews, Gary; Maji, Arup K. (Technical Monitor)

    2001-01-01

    This talk will review Kodak's current AMSD technical and schedule status. For AMSD, Kodak is fabricating a semi-rigid closed-back egg-crate glass mirror, a graphite composite reaction structure, and 16 force actuators for figure control. The mirror is currently on schedule for cryotesting in early '02.

  2. Radiation-hardened CMOS/SOS LSI circuits

    International Nuclear Information System (INIS)

    Aubuchon, K.G.; Peterson, H.T.; Shumake, D.P.

    1976-01-01

    The recently developed technology for building radiation-hardened CMOS/SOS devices has now been applied to the fabrication of LSI circuits. This paper describes and presents results on three different circuits: an 8-bit adder/subtractor (Al gate), a 256-bit shift register (Si gate), and a polycode generator (Al gate). The 256-bit shift register shows very little degradation after 1 x 10 6 rads (Si), with an increase from 1.9V to 2.9V in minimum operating voltage, a decrease of about 20% in maximum frequency, and little or no change in quiescent current. The p-channel thresholds increase from -0.9V to -1.3V, while the n-channel thresholds decrease from 1.05 to 0.23V, and the n-channel leakage remains below 1nA/mil. Excellent hardening results were also obtained on the polycode generator circuit. Ten circuits were irradiated to 1 x 10 6 rads (Si), and all continued to function well, with an increase in minimum power supply voltage from 2.85V to 5.85V and an increase in quiescent current by a factor of about 2. Similar hardening results were obtained on the 8-bit adder, with the minimum power supply voltage increasing from 2.2V to 4.6V and the add time increasing from 270 to 350 nsec after 1 x 10 6 rads (Si). These results show that large CMOS/SOS circuits can be hardened to above 1 x 10 6 rads (Si) with either the Si gate or Al gate technology. The paper also discusses the relative advantages of the Si gate versus the Al gate technology

  3. Transmission X-ray mirror

    International Nuclear Information System (INIS)

    Lairson, B.M.; Bilderback, D.H.

    1982-01-01

    Transmission X-ray mirrors have been made from 400 A to 10 000 A thick soap films and have been shown to have novel properties. Using grazing angles of incidence, low energy X-rays were reflected from the front surface while more energetic X-rays were transmitted through the mirror largely unattenuated. A wide bandpass monochromator was made from a silicon carbide mirror followed by a soap film transmission mirror and operated in the white beam at the cornell High Energy Synchrotron Source (CHESS). Bandpasses of ΔE/E=12% to 18% were achieved at 13 keV with peak efficiencies estimated to be between 55% and 75%, respectively. Several wide angle scattering photographs of stretched polyethylene and a phospholipid were obtained in 10 s using an 18% bandpass. (orig.)

  4. Mirror symmetry and loop operators

    Energy Technology Data Exchange (ETDEWEB)

    Assel, Benjamin [Department of Mathematics, King’s College London,The Strand, London WC2R 2LS (United Kingdom); Gomis, Jaume [Perimeter Institute for Theoretical Physics,Waterloo, Ontario, N2L 2Y5 (Canada)

    2015-11-09

    Wilson loops in gauge theories pose a fundamental challenge for dualities. Wilson loops are labeled by a representation of the gauge group and should map under duality to loop operators labeled by the same data, yet generically, dual theories have completely different gauge groups. In this paper we resolve this conundrum for three dimensional mirror symmetry. We show that Wilson loops are exchanged under mirror symmetry with Vortex loop operators, whose microscopic definition in terms of a supersymmetric quantum mechanics coupled to the theory encode in a non-trivial way a representation of the original gauge group, despite that the gauge groups of mirror theories can be radically different. Our predictions for the mirror map, which we derive guided by branes in string theory, are confirmed by the computation of the exact expectation value of Wilson and Vortex loop operators on the three-sphere.

  5. Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

    Science.gov (United States)

    Schatz, A.; Pantel, D.; Hanemann, T.

    2017-09-01

    Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

  6. Mirror Neurons from Associative Learning

    OpenAIRE

    Catmur, Caroline; Press, Clare; Heyes, Cecilia

    2016-01-01

    Mirror neurons fire both when executing actions and observing others perform similar actions. Their sensorimotor matching properties have generally been considered a genetic adaptation for social cognition; however, in the present chapter we argue that the evidence in favor of this account is not compelling. Instead we present evidence supporting an alternative account: that mirror neurons’ matching properties arise from associative learning during individual development. Notably, this proces...

  7. MARS: Mirror Advanced Reactor Study

    International Nuclear Information System (INIS)

    Logan, B.G.

    1984-01-01

    A recently completed two-year study of a commercial tandem mirror reactor design [Mirror Advanced Reactor Study (MARS)] is briefly reviewed. The end plugs are designed for trapped particle stability, MHD ballooning, balanced geodesic curvature, and small radial electric fields in the central cell. New technologies such as lithium-lead blankets, 24T hybrid coils, gridless direct converters and plasma halo vacuum pumps are highlighted

  8. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

    International Nuclear Information System (INIS)

    Barnaby, Hugh J.; Mclain, Michael; Esqueda, Ivan Sanchez

    2007-01-01

    This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments on shallow trench isolation (STI) field oxide MOS capacitors (FOXCAP) indicate a characteristic build-up of radiation-induced defects in the dielectric. In this paper, capacitors fabricated with STI, thermal, SIMOX and bipolar base oxides of similar thickness are compared and show the STI oxide to be most susceptible to radiation effects. Experimental data on irradiated shift registers and n-channel MOSFETs are also presented. These data indicate that radiation damage to the STI can increase the off-state current of n-channel devices and the standby current of CMOS integrated circuits

  9. A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

    International Nuclear Information System (INIS)

    Binkley, D.M.; Paulus, M.J.; Casey, M.E.; Rochelle, J.M.

    1992-01-01

    In this paper, a low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2μ CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6nV/Hz 1/2 , and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured 22 Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 BGO/APD detector module coupled to the preamplifier is comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 1--kΩ to 50-kΩ range

  10. Break-before-make CMOS inverter for power-efficient delay implementation.

    Science.gov (United States)

    Puhan, Janez; Raič, Dušan; Tuma, Tadej; Bűrmen, Árpád

    2014-01-01

    A modified static CMOS inverter with two inputs and two outputs is proposed to reduce short-circuit current in order to increment delay and reduce power overhead where slow operation is required. The circuit is based on bidirectional delay element connected in series with the PMOS and NMOS switching transistors. It provides differences in the dynamic response so that the direct-path current in the next stage is reduced. The switching transistors are never ON at the same time. Characteristics of various delay element implementations are presented and verified by circuit simulations. Global optimization procedure is used to obtain the most power-efficient transistor sizing. The performance of the modified CMOS inverter chain is compared to standard implementation for various delays. The energy (charge) per delay is reduced up to 40%. The use of the proposed delay element is demonstrated by implementing a low-power delay line and a leading-edge detector cell.

  11. Sensitivity Enhancement of a Vertical-Type CMOS Hall Device for a Magnetic Sensor

    Directory of Open Access Journals (Sweden)

    Sein Oh

    2018-01-01

    Full Text Available This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of 16 μm and a height of 2 μm is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

  12. Constraints on mirror models of dark matter from observable neutron-mirror neutron oscillation

    Directory of Open Access Journals (Sweden)

    Rabindra N. Mohapatra

    2018-01-01

    Full Text Available The process of neutron-mirror neutron oscillation, motivated by symmetric mirror dark matter models, is governed by two parameters: n−n′ mixing parameter δ and n−n′ mass splitting Δ. For neutron mirror neutron oscillation to be observable, the splitting between their masses Δ must be small and current experiments lead to δ≤2×10−27 GeV and Δ≤10−24 GeV. We show that in mirror universe models where this process is observable, this small mass splitting constrains the way that one must implement asymmetric inflation to satisfy the limits of Big Bang Nucleosynthesis on the number of effective light degrees of freedom. In particular we find that if asymmetric inflation is implemented by inflaton decay to color or electroweak charged particles, the oscillation is unobservable. Also if one uses SM singlet fields for this purpose, they must be weakly coupled to the SM fields.

  13. Advances in telescope mirror cleaning

    Science.gov (United States)

    Blanken, Maarten F.; Chopping, Alan K.; Dee, Kevin M.

    2004-09-01

    Metrology and cleaning techniques for telescope mirrors are generally well established. CO2 cleaning and water washing are mainly used. Water washing has proven to be the best method of removing oil and water stains and restoring the aluminium to nearly fresh values. The risk of water getting to unwanted places such as electronics or other optics prevents this method from being employed more often. Recently the Isaac Newton Group introduced a new cleaning technique for their telescope mirrors, which reduces the risks discussed above. This technique uses water vapour instead of water to wash the mirror. The advantage of this method is that the amount of water needed is drastically reduced. In addition the pressure of the vapour will blow away any large dust particles on the mirror and the temperature shock between the vapour and the mirror will help to de-bond the dust particles. Adding a soapy solution will help to clean oil and watermarks of the mirror. This paper describes the vapour cleaning method, tests that have been done and the overall findings.

  14. Evolution of the mirror machine

    International Nuclear Information System (INIS)

    Damm, C.C.

    1983-01-01

    The history of the magnetic-mirror approach to a fusion reactor is primarily the history of our understanding and control of several crucial physics issues, coupled with progress in the technology of heating and confining a reacting plasma. The basic requirement of an MHD-stable plasma equilibrium was achieved following the early introduction of minimum-B multipolar magnetic fields. In refined form, the same magnetic-well principle carries over to our present experiments and to reactor designs. The higher frequency microinstabilities, arising from the non-Maxwellian particle distributions inherent in mirror machines, have gradually come under control as theoretical prescriptions for distribution functions have been applied in the experiments. Even with stability, the classical plasma leakage through the mirrors posed a serious question for reactor viability until the principle of electrostatic axial stoppering was applied in the tandem mirror configuration. Experiments to test this principle successfully demonstrated the substantial improvement in confinement predicted. Concurrent with advances in mirror plasma physics, development of both high-power neutral beam injectors and high-speed vacuum pumping techniques has played a crucial role in ongoing experiments. Together with superconducting magnets, cryogenic pumping, and high-power radiofrequency heating, these technologies have evolved to a level that extrapolates readily to meet the requirements of a tandem mirror fusion reactor

  15. Back End of Line Nanorelays for Ultra-low Power Monolithic Integrated NEMS-CMOS Circuits

    KAUST Repository

    Lechuga Aranda, Jesus Javier

    2016-05-01

    Since the introduction of Complementary-Metal-Oxide-Semiconductor (CMOS) technology, the chip industry has enjoyed many benefits of transistor feature size scaling, including higher speed and device density and improved energy efficiency. However, in the recent years, the IC designers have encountered a few roadblocks, namely reaching the physical limits of scaling and also increased device leakage which has resulted in a slow-down of supply voltage and power density scaling. Therefore, there has been an extensive hunt for alternative circuit architectures and switching devices that can alleviate or eliminate the current crisis in the semiconductor industry. The Nano-Electro-Mechanical (NEM) relay is a promising alternative switch that offers zero leakage and abrupt turn-on behaviour. Even though these devices are intrinsically slower than CMOS transistors, new circuit design techniques tailored for the electromechanical properties of such devices can be leveraged to design medium performance, ultra-low power integrated circuits. In this thesis, we deal with a new generation of such devices that is built in the back end of line (BEOL) CMOS process and is an ideal option for full integration with current CMOS transistor technology. Simulation and verification at the circuit and system level is a critical step in the design flow of microelectronic circuits, and this is especially important for new technologies that lack the standard design infrastructure and well-known verification platforms. Although most of the physical and electrical properties of NEM structures can be simulated using standard electronic automation software, there is no report of a reliable behavioural model for NEMS switches that enable large circuit simulations. In this work, we present an optimised model of a BEOL nano relay that encompasses all the electromechanical characteristics of the device and is robust and lightweight enough for VLSI applications that require simulation of thousands of

  16. The compact mirrors with high pressure plasmas

    International Nuclear Information System (INIS)

    Anikeev, A.V.; Bagryansky, P.A.; Ivanov, A.A.; Lizunov, A.A.; Murakhtin, S.V.; Prikhodko, V.V.; Collatz, S.; Noack, K.

    2004-01-01

    The gas dynamic trap (GDP) experimental facility at the Budker Institute Novosibirsk is a long axial-symmetric mirror system with a high mirror ratio variable in the range of 12.5 - 100 for the confinement of a two-component plasma. One component is a collisional plasma with ion and electron temperatures up to 100 eV and density up to 10 14 cm -3 . The second component is the population of high-energetic fast ions with energies of 2-18 keV and a density up to 10 13 cm -3 which is produced by neutral beam injection (NBI). GDP is currently undergoing an upgrade whose first stage is the achievement of the synthesized hot ion plasmoid experiment (SHIP). This experiment aims at the investigation of plasmas and at the knowledge of plasma parameters that have never been achieved before in magnetic mirrors. The paper presents the physical concept of the SHIP experiment, the results of numerical pre-calculations and draws conclusions regarding possible scenarios of experiments. The simulation of a maximal NBI power regime with hydrogen injection gave a fast ion density of 1.2*10 14 cm -3 with a mean energy of 14 keV. The calculation of the deuterium injection regime with 2 MW NBI power gave a maximal fast ion density of 1.9*10 14 cm -3 with a beam energy of 9 keV. The calculation of an experimental scenario with reduced magnetic field resulted in a maximal β-value of 62%, so this regime is recommended for the study of high-β effects in plasmas confined in axial-symmetric mirrors

  17. An auto-biased 0.5 um CMOS transconductor for very high frequency applications

    OpenAIRE

    Garrido, Nuno; Franca, José E.

    1998-01-01

    This paper describes a CMOS transconductance cell for the implementation of very high frequency current-mode gm-C filters. It features simple pseudo-differential circuitry employing small device size transistors and yielding a power dissipation of less than 1 mW/pole at nominal 3.0 V supply voltage. Self-biased common-mode voltage designed to minimize mismatch errors, improves noise and stability behavior. Short channel effects are analyzed and simulation results are presented.

  18. Engineering aspects of a fully mirrored endoscope

    International Nuclear Information System (INIS)

    Terra, A.; Huber, A.; Schweer, B.; Mertens, Ph.; Arnoux, G.; Balshaw, N.; Brezinsek, S.; Egner, S.; Hartl, M.; Kampf, D.; Klammer, J.; Lambertz, H.T.; Morlock, C.; Murari, A.; Reindl, M.; Sanders, S.; Sergienko, G.; Spencer, G.

    2013-01-01

    Highlights: ► Replacement of JET diagnostics to match the new ITER-like Wall. ► The endoscope test ITER-like design with only mirror based optics. ► Withstanding and diagnostic capability during Plasma operation and disruptions. ► Engineering process from design to installation and procurement. -- Abstract: The development of optical diagnostics, like endoscopes, compatible with the ITER environment (metallic plasma facing components, neutron proof optics, etc.) is a challenge, but current tokamaks such as JET provide opportunities to test fully working concepts. This paper describes the engineering aspects of a fully mirrored endoscope that has recently been designed, procured and installed on JET. The system must operate in a very strict environment with high temperature, high magnetic fields up to B = 4 T and rapid field variations (∂B/∂t ∼ 100 T/s) that induce high stresses due to eddy currents in the front mirror assembly. It must be designed to withstand high mechanical loads especially during disruptions, which lead to acceleration of about 7 g at 14 Hz. For the JET endoscope, when the plasma thermal loading, direct and indirect, was added to the assumed disruption loads, the reserve factor, defined as a ratio of yield strength over summed up von Mises stresses, was close to 1 for the mirror components. To ensure reliable operation, several analyses were performed to evaluate the thermo-mechanical performance of the endoscope and a final validation was obtained from mechanical and thermal tests, before the system's final installation in May 2011. During the tests, stability of the field of view angle variation was kept below 1° despite the high thermal gradient on endoscope head (∂T/∂x ∼ 500 K/m). In parallel, to ensure long time operation and to prevent undesirable performance degradation, a shutter system was also implemented in order to reduce impurity deposition on in-vessel mirrors but also to allow in situ transmission calibration

  19. BioCMOS Interfaces and Co-Design

    CERN Document Server

    Carrara, Sandro

    2013-01-01

    The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

  20. Cryo-CMOS Circuits and Systems for Quantum Computing Applications

    NARCIS (Netherlands)

    Patra, B; Incandela, R.M.; van Dijk, J.P.G.; Homulle, H.A.R.; Song, Lin; Shahmohammadi, M.; Staszewski, R.B.; Vladimirescu, A.; Babaie, M.; Sebastiano, F.; Charbon, E.E.E.

    2018-01-01

    A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising

  1. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2014-01-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

  2. From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

    DEFF Research Database (Denmark)

    Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.

    2008-01-01

    This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

  3. High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

    Science.gov (United States)

    Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

    2012-05-07

    This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

  4. A Novel Leakage-tolerant Domino Logic Circuit With Feedback From Footer Transistor In Ultra Deep Submicron CMOS

    DEFF Research Database (Denmark)

    Moradi, Farshad; Peiravi, Ali; Mahmoodi, Hamid

    As the CMOS manufacturing process scales down into the ultra deep sub-micron regime, the leakage current becomes an increasingly more important consideration in VLSI circuit design. In this paper, a high speed and noise immune domino logic circuit is presented which uses the property of the footer...

  5. Variation-aware advanced CMOS devices and SRAM

    CERN Document Server

    Shin, Changhwan

    2016-01-01

    This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

  6. Simulations of depleted CMOS sensors for high-radiation environments

    CERN Document Server

    Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

    2017-01-01

    After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

  7. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-11-23

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

  8. Broadband image sensor array based on graphene-CMOS integration

    Science.gov (United States)

    Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

    2017-06-01

    Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

  9. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  10. Radiation-hardened CMOS integrated circuits

    International Nuclear Information System (INIS)

    Pikor, A.; Reiss, E.M.

    1980-01-01

    Substantial effort has been directed at radiation-hardening CMOS integrated circuits using various oxide processes. While most of these integrated circuits have been successful in demonstrating megarad hardness, further investigations have shown that the 'wet-oxide process' is most compatible with the RCA CD4000 Series process. This article describes advances in the wet-oxide process that have resulted in multimegarad hardness and yield to MIL-M-38510 screening requirements. The implementation of these advances into volume manufacturing is geared towards supplying devices for aerospace requirements such as the Defense Meterological Satellite program (DMSP) and the Global Positioning Satellite (GPS). (author)

  11. Nano-CMOS gate dielectric engineering

    CERN Document Server

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  12. CMOS biomicrosystems where electronics meets biology

    CERN Document Server

    2011-01-01

    "The book will address the-state-of-the-art in integrated Bio-Microsystems that integrate microelectronics with fluidics, photonics, and mechanics. New exciting opportunities in emerging applications that will take system performance beyond offered by traditional CMOS based circuits are discussed in detail. The book is a must for anyone serious about microelectronics integration possibilities for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with electronics background that want to learn about integrated microsystems. The book will be also used as a recommended reading and supplementary material in graduate course curriculum"--

  13. A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

    Science.gov (United States)

    Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

    2014-01-01

    This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

  14. Tandem mirror and tokamak reactor maintainability comparison

    International Nuclear Information System (INIS)

    Zahn, H.S.

    1981-01-01

    The analysis proceeds through estimates of downtime and resources required for selected maintenance actions and optimization of the replacement fraction, availability and cost of electricity. Scheduled downtime estimates and availability goals provide a basis for determining allowable forced outage downtimes. These analyses have been conducted with the assumption of redundancy wherever feasible but without the impact of maintenance equipment outages. Annual maintenance cost estimates and availabilities for both reactors are found to be approximately equal. However, the tandem mirror reactor capital costs are higher. Reduction of these costs appears feasible with the trend of current design studies toward smaller and more accessible machines

  15. Electrocurtain coating process for coating solar mirrors

    Science.gov (United States)

    Kabagambe, Benjamin; Boyd, Donald W.; Buchanan, Michael J.; Kelly, Patrick; Kutilek, Luke A.; McCamy, James W.; McPheron, Douglas A.; Orosz, Gary R.; Limbacher, Raymond D.

    2013-10-15

    An electrically conductive protective coating or film is provided over the surface of a reflective coating of a solar mirror by flowing or directing a cation containing liquid and an anion containing liquid onto the conductive surface. The cation and the anion containing liquids are spaced from, and preferably out of contact with one another on the surface of the reflective coating as an electric current is moved through the anion containing liquid, the conductive surface between the liquids and the cation containing liquid to coat the conductive surface with the electrically conductive coating.

  16. The mirror-neuron system.

    Science.gov (United States)

    Rizzolatti, Giacomo; Craighero, Laila

    2004-01-01

    A category of stimuli of great importance for primates, humans in particular, is that formed by actions done by other individuals. If we want to survive, we must understand the actions of others. Furthermore, without action understanding, social organization is impossible. In the case of humans, there is another faculty that depends on the observation of others' actions: imitation learning. Unlike most species, we are able to learn by imitation, and this faculty is at the basis of human culture. In this review we present data on a neurophysiological mechanism--the mirror-neuron mechanism--that appears to play a fundamental role in both action understanding and imitation. We describe first the functional properties of mirror neurons in monkeys. We review next the characteristics of the mirror-neuron system in humans. We stress, in particular, those properties specific to the human mirror-neuron system that might explain the human capacity to learn by imitation. We conclude by discussing the relationship between the mirror-neuron system and language.

  17. Metamaterial mirrors in optoelectronic devices

    KAUST Repository

    Esfandyarpour, Majid

    2014-06-22

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

  18. Metamaterial mirrors in optoelectronic devices

    KAUST Repository

    Esfandyarpour, Majid; Garnett, Erik C.; Cui, Yi; McGehee, Michael D.; Brongersma, Mark L.

    2014-01-01

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

  19. Vertex algebras and mirror symmetry

    International Nuclear Information System (INIS)

    Borisov, L.A.

    2001-01-01

    Mirror Symmetry for Calabi-Yau hypersurfaces in toric varieties is by now well established. However, previous approaches to it did not uncover the underlying reason for mirror varieties to be mirror. We are able to calculate explicitly vertex algebras that correspond to holomorphic parts of A and B models of Calabi-Yau hypersurfaces and complete intersections in toric varieties. We establish the relation between these vertex algebras for mirror Calabi-Yau manifolds. This should eventually allow us to rewrite the whole story of toric mirror symmetry in the language of sheaves of vertex algebras. Our approach is purely algebraic and involves simple techniques from toric geometry and homological algebra, as well as some basic results of the theory of vertex algebras. Ideas of this paper may also be useful in other problems related to maps from curves to algebraic varieties.This paper could also be of interest to physicists, because it contains explicit description of holomorphic parts of A and B models of Calabi-Yau hypersurfaces and complete intersections in terms of free bosons and fermions. (orig.)

  20. Multiple-mirror plasma confinement

    International Nuclear Information System (INIS)

    Lichtenberg, A.J.; Lieberman, M.A.; Logan, B.G.

    1975-01-01

    A large enhancement of the confinement time can be achieved in a straight system of multiple mirrors over an equal length uniform magnetic field. The scaling is diffusive rather than that of flow, thereby scaling the square of the system length rather than linear with system length. Probably the most economic mode of operation for a reactor occurs when lambda/M is approximately l/sub c/, where lambda is the mean free path, M the mirror ratio, and l/sub c/ the length between mirrors; but where the scale length of the mirror field l/sub m/ is much less than lambda. The axial confinement time has been calculated theoretically and numerically for all important parameter regimes, and confirmed experimentally. A typical reactor calculation gives Q/sub E/ = 2 for a 400 meter system with 3000 MW(e) output. The main concern of a multiple-mirror system is stability. Linked quadrupoles can achieve average minimum-B stabilization of flute modes, and experiments have demonstrated this stabilization. Localized instabilities at finite β and enhanced diffusion resulting from the distorted flux surfaces and possibly from turbulent higher order modes still remain to be investigated

  1. Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zujun, E-mail: wangzujun@nint.ac.cn; Ma, Wuying; Huang, Shaoyan; Yao, Zhibin; Liu, Minbo; He, Baoping; Sheng, Jiangkun; Xue, Yuan [State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024 (China); Liu, Jing [School of Materials Science and Engineering, Xiangtan University, Hunan (China)

    2016-03-15

    The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a {sup 60}Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

  2. Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1991-11-01

    A CMOS process that is compatible with silicon p-i-n radiation detectors has been developed and characterized. A total of twelve mask layers are used in the process. The NMOS device is formed in a retrograde well while the PMOS device is fabricated directly in the high-resistivity silicon. Isolation characteristics are similar to a standard foundary CMOS process. Circuit performance using 3 μm design rules has been evaluated. The measured propagation delay and power-delay product for a 51-stage ring oscillator was 1.5 ns and 43 fJ, respectively. Measurements on a simple cascode amplifier results in a gain-bandwidth product of 200 MHz at a bias current of 15 μA. The input-referred noise of the cascode amplifier is 20 nV/√Hz at 1 MHz

  3. Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

    Directory of Open Access Journals (Sweden)

    Shojan P. Pavunny

    2014-03-01

    Full Text Available A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS, bipolar (Bi and BiCMOS chips applications, is presented in this review article.

  4. A novel input-parasitic compensation technique for a nanopore-based CMOS DNA detection sensor

    Science.gov (United States)

    Kim, Jungsuk

    2016-12-01

    This paper presents a novel input-parasitic compensation (IPC) technique for a nanopore-based complementary metal-oxide-semiconductor (CMOS) DNA detection sensor. A resistive-feedback transimpedance amplifier is typically adopted as the headstage of a DNA detection sensor to amplify the minute ionic currents generated from a nanopore and convert them to a readable voltage range for digitization. But, parasitic capacitances arising from the headstage input and the nanopore often cause headstage saturation during nanopore sensing, thereby resulting in significant DNA data loss. To compensate for the unwanted saturation, in this work, we propose an area-efficient and automated IPC technique, customized for a low-noise DNA detection sensor, fabricated using a 0.35- μm CMOS process; we demonstrated this prototype in a benchtop test using an α-hemolysin ( α-HL) protein nanopore.

  5. A highly sensitive CMOS digital Hall sensor for low magnetic field applications.

    Science.gov (United States)

    Xu, Yue; Pan, Hong-Bin; He, Shu-Zhuan; Li, Li

    2012-01-01

    Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.

  6. Characterization and radiation studies of diode test structures in LFoundry CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

    2016-07-01

    In order to prepare for the High Luminosity upgrade of the LHC, all subdetector systems of the ATLAS experiment will be upgraded. In preparation for this process, different possibilities for new radiation-hard and cost-efficient silicon sensor technologies to be used as part of hybrid pixel detectors in the ATLAS inner tracker are being investigated. One promising way to optimize the cost-efficiency of silicon-based pixel detectors is to use commercially available CMOS technologies such as the 150 nm process by LFoundry. In this talk, several CMOS pixel test structures, such as simple diodes and small pixel arrays, that were manufactured in this technology are characterized regarding general performance and radiation hardness and compared to each other as well as to the current ATLAS pixel detector.

  7. CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

    International Nuclear Information System (INIS)

    Sawadsaringkarn, Y; Kimura, H; Maezawa, Y; Nakajima, A; Kobayashi, T; Sasagawa, K; Noda, T; Tokuda, T; Ohta, J

    2012-01-01

    A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

  8. Preliminary design of a tandem mirror reactor

    International Nuclear Information System (INIS)

    Strohmayer, J.N.

    1984-04-01

    The purpose of this thesis is to examine the TARA mirror experiment as a possible tandem mirror reactor configuration. This is a preliminary study to size the coil structure based on using the smallest end cell axial length that physics and engineering allow, zeroing the central cell parallel currents and having interchange stability. The input powers are estimated for the final reactor design so a Q value may be estimated. The Q value is defined as the fusion power divided by the total injected power absorbed by the plasma. A computer study was performed on the effect of the transition size, the transition vertical spacing and transition current. These parameters affect the central cell parallel currents, the recircularization of the flux tube and the ratio of central cell beta to anchor beta needed for marginal stability. Two designs were identified. The first uses 100 keV and 13 keV neutral beams to pump the ions that trap in the thermal barrier. The Q value of this reactor is 11.3. The second reactor uses a pump beam at 40 keV. This energy is chosen because there is a resonance for the charge exchange cross section between D 0 and He 2+ at this energy, thus the alpha ash will be pumped along with the deuterium and tritium. The Q value of this reactor is 11.6

  9. A Biologically Inspired CMOS Image Sensor

    CERN Document Server

    Sarkar, Mukul

    2013-01-01

    Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with their own photoreceptor arrays.  The visual system of insects allows them to fly with a limited intelligence and brain processing power. A CMOS image sensor replicating the perception of vision in insects is discussed and designed in this book for industrial (machine vision) and medical applications. The CMOS metal layer is used to create an embedded micro-polarizer able to sense polarization information. This polarization information is shown to be useful in applications like real time material classification and autonomous agent navigation. Further the sensor is equipped with in pixel analog and digital memories which allow variation of the dynamic range and in-pixel b...

  10. A new CMOS Hall angular position sensor

    Energy Technology Data Exchange (ETDEWEB)

    Popovic, R.S.; Drljaca, P. [Swiss Federal Inst. of Tech., Lausanne (Switzerland); Schott, C.; Racz, R. [SENTRON AG, Zug (Switzerland)

    2001-06-01

    The new angular position sensor consists of a combination of a permanent magnet attached to a shaft and of a two-axis magnetic sensor. The permanent magnet produces a magnetic field parallel with the magnetic sensor plane. As the shaft rotates, the magnetic field also rotates. The magnetic sensor is an integrated combination of a CMOS Hall integrated circuit and a thin ferromagnetic disk. The CMOS part of the system contains two or more conventional Hall devices positioned under the periphery of the disk. The ferromagnetic disk converts locally a magnetic field parallel with the chip surface into a field perpendicular to the chip surface. Therefore, a conventional Hall element can detect an external magnetic field parallel with the chip surface. As the direction of the external magnetic field rotates in the chip plane, the output voltage of the Hall element varies as the cosine of the rotation angle. By placing the Hall elements at the appropriate places under the disk periphery, we may obtain the cosine signals shifted by 90 , 120 , or by any other angle. (orig.)

  11. Planar pixel sensors in commercial CMOS technologies

    Energy Technology Data Exchange (ETDEWEB)

    Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn, Nussallee 12, 53115 Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany)

    2015-07-01

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  12. AN OVERVIEW OF POWER DISSIPATION AND CONTROL TECHNIQUES IN CMOS TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    N. B. ROMLI

    2015-03-01

    Full Text Available Total power dissipation in CMOS circuits has become a huge challenging in current semiconductor industry due to the leakage current and the leakage power. The exponential growth of both static and dynamic power dissipations in any CMOS process technology option has increased the cost and efficiency of the system. Technology options are used for the execution specifications and usually it depends on the optimisation and the performance constraints over the chip. This article reviews the relevant researches of the source or power dissipation, the mechanism to reduce the dynamic power dissipation as well as static power dissipation and an overview of various circuit techniques to control them. Important device parameters including voltage threshold and switching capacitance impact to the circuit performance in lowering both dynamic and static power dissipation are presented. The demand for the reduction of power dissipation in CMOS technology shall remain a challenging and active area of research for years to come. Thus, this review shall work as a guideline for the researchers who wish to work on power dissipation and control techniques.

  13. Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

    International Nuclear Information System (INIS)

    Re, V.; Gaioni, L.; Manghisoni, M.; Ratti, L.; Traversi, G.

    2010-01-01

    The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the design of very compact front-end systems with advanced integrated functionalities. This is especially true in the case of pixel detectors, both for monolithic devices (MAPS) and for hybrid implementations where a high resistivity sensor is connected to a CMOS readout chip. Technologies beyond the 100 nm frontier have peculiar features, such as the evolution of the device gate material to reduce tunneling currents through the thin dielectric. These new physical device parameters may impact on functional properties such as noise and radiation hardness. On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies.

  14. Engagement: Looking beyond the mirror to understand action understanding.

    Science.gov (United States)

    Reddy, Vasudevi; Uithol, Sebo

    2016-03-01

    In this paper, we argue that the current focus on mirroring as the route to explaining the development of action understanding is misleading and problematic. It facilitates a fundamentally spectatorial stance, ignoring engagement and dialogue; it focuses on similarity between self and other and neglects difference; and it succumbs to the static terminology of mechanism rather than a dynamic language of process. Contrary to this view, dialogic exchanges are evident from the start of life, revealing infants' ability to engage with and respond appropriately to actions that are outside their own motor repertoire. We suggest that engagement rather than mirroring better accounts for many current findings in action understanding. The neurological evidence to date shows that action perception involves a process of continuous synchronization and change, suggesting that it might be more fruitful for research and theory to look beyond mirroring and instead adopt dynamic processual explanations of action understanding within interaction. © 2015 The British Psychological Society.

  15. Anomalous transport in mirror systems

    International Nuclear Information System (INIS)

    Post, R.F.

    1979-01-01

    As now being explored for fusion applications confinement systems based on the mirror principle embody two kinds of plasma regimes. These two regimes are: (a) high-beta plasmas, stabilized against MHD and other low frequency plasma instabilities by magnetic-well fields, but characterized by non-Maxwellian ion distributions; (b) near-Maxwellian plasmas, confined electrostatically (as in the tandem mirror) or in a field-reversed region within the mirror cell. Common to both situations are the questions of anomalous transport owing to high frequency instabilities in the non-maxwellian portions of the plasmas. This report will summarize the status of theory and of experimental data bearing on these questions, with particular reference to the high temperature regimes of interest for fusion power

  16. Diagnostic mirrors for ITER: A material choice and the impact of erosion and deposition on their performance

    International Nuclear Information System (INIS)

    Litnovsky, A.; Wienhold, P.; Philipps, V.; Sergienko, G.; Schmitz, O.; Kirschner, A.; Kreter, A.; Droste, S.; Samm, U.; Mertens, Ph.; Donne, A.H.; Rudakov, D.; Allen, S.; Boivin, R.; McLean, A.; Stangeby, P.; West, W.; Wong, C.; Lipa, M.; Schunke, B.; De Temmerman, G.; Pitts, R.; Costley, A.; Voitsenya, V.; Vukolov, K.; Oelhafen, P.; Rubel, M.; Romanyuk, A.

    2007-01-01

    Metal mirrors will be implemented in about half of the ITER diagnostics. Mirrors in ITER will have to withstand radiation loads, erosion by charge-exchange neutrals, deposition of impurities, particle implantation and neutron irradiation. It is believed that the optical properties of diagnostic mirrors will be primarily influenced by erosion and deposition. A solution is needed for optimal performance of mirrors in ITER throughout the entire lifetime of the machine. A multi-machine research on diagnostic mirrors is currently underway in fusion facilities at several institutions and laboratories worldwide. Among others, dedicated investigations of ITER-candidate mirror materials are ongoing in Tore-Supra, TEXTOR, DIII-D, TCV, T-10 and JET. Laboratory studies are underway at IPP Kharkov (Ukraine), Kurchatov Institute (Russia) and the University of Basel (Switzerland). An overview of current research on diagnostic mirrors along with an outlook on future investigations is the subject of this paper

  17. A monolithic 640 × 512 CMOS imager with high-NIR sensitivity

    Science.gov (United States)

    Lauxtermann, Stefan; Fisher, John; McDougal, Michael

    2014-06-01

    In this paper we present first results from a backside illuminated CMOS image sensor that we fabricated on high resistivity silicon. Compared to conventional CMOS imagers, a thicker photosensitive membrane can be depleted when using silicon with low background doping concentration while maintaining low dark current and good MTF performance. The benefits of such a fully depleted silicon sensor are high quantum efficiency over a wide spectral range and a fast photo detector response. Combining these characteristics with the circuit complexity and manufacturing maturity available from a modern, mixed signal CMOS technology leads to a new type of sensor, with an unprecedented performance spectrum in a monolithic device. Our fully depleted, backside illuminated CMOS sensor was designed to operate at integration times down to 100nsec and frame rates up to 1000Hz. Noise in Integrate While Read (IWR) snapshot shutter operation for these conditions was simulated to be below 10e- at room temperature. 2×2 binning with a 4× increase in sensitivity and a maximum frame rate of 4000 Hz is supported. For application in hyperspectral imaging systems the full well capacity in each row can individually be programmed between 10ke-, 60ke- and 500ke-. On test structures we measured a room temperature dark current of 360pA/cm2 at a reverse bias of 3.3V. A peak quantum efficiency of 80% was measured with a single layer AR coating on the backside. Test images captured with the 50μm thick VGA imager between 30Hz and 90Hz frame rate show a strong response at NIR wavelengths.

  18. Fokker-Planck equation in mirror research

    International Nuclear Information System (INIS)

    Post, R.F.

    1983-01-01

    Open confinement systems based on the magnetic mirror principle depend on the maintenance of particle distributions that may deviate substantially from Maxwellian distributions. Mirror research has therefore from the beginning relied on theoretical predictions of non-equilibrium rate processes obtained from solutions to the Fokker-Planck equation. The F-P equation plays three roles: Design of experiments, creation of classical standards against which to compare experiment, and predictions concerning mirror based fusion power systems. Analytical and computational approaches to solving the F-P equation for mirror systems will be reviewed, together with results and examples that apply to specific mirror systems, such as the tandem mirror

  19. Neoclassical resonant transport of a mirror cell

    International Nuclear Information System (INIS)

    Ito, T.; Katanuma, I.

    2005-01-01

    The neoclassical resonant plateau transport in a mirror cell is studied theoretically. The analytical expression for a non-square-well magnetic field is obtained. The analytical result is applied to the GAMMA10 tandem mirror [T. Cho, M. Yoshida, J. Kohagura et al., Phys. Rev. Lett. 94, 085002-1 (2005)], which consists of several mirror cells in it, and the confinement time due to the neoclassical resonant plateau transport is determined in each mirror cell. It is found that the neoclassical resonant transport of ions trapped in the nonaxisymmetric anchor mirror cell and transition mirror cells is significantly smaller than those trapped in the central cell

  20. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    International Nuclear Information System (INIS)

    Esposito, M; Evans, P M; Wells, K; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Allinson, N M

    2014-01-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  1. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

    Science.gov (United States)

    Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

    2014-07-07

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  2. Mirror Advanced Reactor Study (MARS)

    International Nuclear Information System (INIS)

    Logan, B.G.

    1983-01-01

    Progress in a two year study of a 1200 MWe commercial tandem mirror reactor (MARS - Mirror Advanced Reactor Study) has reached the point where major reactor system technologies are identified. New design features of the magnets, blankets, plug heating systems and direct converter are described. With the innovation of radial drift pumping to maintain low plug density, reactor recirculating power fraction is reduced to 20%. Dominance of radial ion and impurity losses into the halo permits gridless, circular direct converters to be dramatically reduced in size. Comparisons of MARS with the Starfire tokamak design are made

  3. The Mirror in the Ground

    DEFF Research Database (Denmark)

    Shepherd, Nick

    An important and original contribution to the study of the archive, The Mirror in the Ground approaches the discipline of archaeology in South Africa from the perspective of an interest in visualities. Author Nick Shepherd argues that it makes sense to talk about an archaeological aesthetics...... at the University of Cape Town, where he convenes a graduate programme on Public Culture and Heritage. The Mirror in the Ground is the first volume in the relaunched Series in Visual Histories, produced by the Centre for Curating the Archive (CCA) at the University of Cape Town....

  4. Mirror Fusion Test Facility magnet

    International Nuclear Information System (INIS)

    Henning, C.H.; Hodges, A.J.; Van Sant, J.H.; Hinkle, R.E.; Horvath, J.A.; Hintz, R.E.; Dalder, E.; Baldi, R.; Tatro, R.

    1979-01-01

    The Mirror Fusion Test Facility (MFTF) is the largest of the mirror program experiments for magnetic fusion energy. It seeks to combine and extend the near-classical plasma confinement achieved in 2XIIB with the most advanced neutral-beam and magnet technologies. The product of ion density and confinement time will be improved more than an order of magnitude, while the superconducting magnet weight will be extrapolated from the 15 tons in Baseball II to 375 tons in MFTF. Recent reactor studies show that the MFTF will traverse much of the distance in magnet technology towards the reactor regime. Design specifics of the magnet are given

  5. Sneaking a peek: pigeons use peripheral vision (not mirrors) to find hidden food.

    Science.gov (United States)

    Ünver, Emre; Garland, Alexis; Tabrik, Sepideh; Güntürkün, Onur

    2017-07-01

    A small number of species are capable of recognizing themselves in the mirror when tested with the mark-and-mirror test. This ability is often seen as evidence of self-recognition and possibly even self-awareness. Strangely, a number of species, for example monkeys, pigs and dogs, are unable to pass the mark test but can locate rewarding objects by using the reflective properties of a mirror. Thus, these species seem to understand how a visual reflection functions but cannot apply it to their own image. We tested this discrepancy in pigeons-a species that does not spontaneously pass the mark test. Indeed, we discovered that pigeons can successfully find a hidden food reward using only the reflection, suggesting that pigeons can also use and potentially understand the reflective properties of mirrors, even in the absence of self-recognition. However, tested under monocular conditions, the pigeons approached and attempted to walk through the mirror rather than approach the physical food, displaying similar behavior to patients with mirror agnosia. These findings clearly show that pigeons do not use the reflection of mirrors to locate reward, but actually see the food peripherally with their near-panoramic vision. A re-evaluation of our current understanding of mirror-mediated behavior might be necessary-especially taking more fully into account species differences in visual field. This study suggests that use of reflections in a mirrored surface as a tool may be less widespread than currently thought.

  6. All-CMOS night vision viewer with integrated microdisplay

    Science.gov (United States)

    Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

    2014-02-01

    The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

  7. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

    Directory of Open Access Journals (Sweden)

    Jose Luis Muñoz-Gamarra

    2016-02-01

    Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

  8. Timecourse of mirror and counter-mirror effects measured with transcranial magnetic stimulation.

    Science.gov (United States)

    Cavallo, Andrea; Heyes, Cecilia; Becchio, Cristina; Bird, Geoffrey; Catmur, Caroline

    2014-08-01

    The human mirror system has been the subject of much research over the past two decades, but little is known about the timecourse of mirror responses. In addition, it is unclear whether mirror and counter-mirror effects follow the same timecourse. We used single-pulse transcranial magnetic stimulation to investigate the timecourse of mirror and counter-mirror responses in the human brain. Experiment 1 demonstrated that mirror responses can be measured from around 200 ms after observed action onset. Experiment 2 demonstrated significant effects of counter-mirror sensorimotor training at all timepoints at which a mirror response was found in Experiment 1 (i.e. from 200 ms onward), indicating that mirror and counter-mirror responses follow the same timecourse. By suggesting similarly direct routes for mirror and counter-mirror responses, these results support the associative account of mirror neuron origins whereby mirror responses arise as a result of correlated sensorimotor experience during development. More generally, they contribute to theorizing regarding mirror neuron function by providing some constraints on how quickly mirror responses can influence social cognition. © The Author (2013). Published by Oxford University Press. For Permissions, please email: journals.permissions@oup.com.

  9. Development of a CMOS process using high energy ion implantation

    International Nuclear Information System (INIS)

    Stolmeijer, A.

    1986-01-01

    The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

  10. Prevention of CMOS latch-up by gold doping

    International Nuclear Information System (INIS)

    Dawes, W.R.; Derbenwick, G.F.

    1976-01-01

    CMOS integrated circuits fabricated with the bulk silicon technology typically exhibit latch-up effects in either an ionizing radiation environment or an overvoltage stress condition. The latch-up effect has been shown to arise from regenerative switching, analogous to an SCR, in the adjacent parasitic bipolar transistors formed during the fabrication of a bulk CMOS device. Once latch-up has been initiated, it is usually self-sustaining and eventually destructive. Naturally, the circuit is inoperative during latch-up. This paper discusses a generic process technique that prevents the latch-up mechanism in CMOS devices

  11. CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

    2000-08-10

    In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

  12. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    KAUST Repository

    Saffih, Faycal

    2012-06-01

    In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

  13. On four dimensional mirror symmetry

    International Nuclear Information System (INIS)

    Losev, A.; Nekrasov, N.; Shatashvili, S.

    2000-01-01

    A conjecture relating instanton calculus in four dimensional supersymmetric theories and the deformation theory of Lagrangian submanifolds in C 2r invariant under a (subgroup of) Sp(2r,Z) is formulated. This is a four dimensional counterpart of the mirror symmetry of topological strings (relating Gromov-Witten invariants and generalized variations of Hodge structure). (orig.)

  14. Mirror model for sterile neutrinos

    International Nuclear Information System (INIS)

    Berezinsky, Veniamin; Narayan, Mohan; Vissani, Francesco

    2003-01-01

    Sterile neutrinos are studied as subdominant contribution to solar neutrino physics. The mirror-matter neutrinos are considered as sterile neutrinos. We use the symmetric mirror model with gravitational communication between mirror and visible sectors. This communication term provides mixing between visible and mirror neutrinos with the basic scale μ=v EW 2 /M Pl =2.5x10 -6 eV, where v EW =174 GeV is the vacuum expectation value of the standard electroweak group and M Pl is the Planckian mass. It is demonstrated that each mass eigenstate of active neutrinos splits into two states separated by small Δm 2 . Unsuppressed oscillations between active and sterile neutrinos (ν a ↔ν s ) occur only in transitions between each of these close pairs ('windows'). These oscillations are characterized by very small Δm 2 and can suppress the flux and distort spectrum of pp-neutrinos in detectable way. The other observable effect is anomalous seasonal variation of neutrino flux, which appears in LMA solution. The considered subdominant neutrino oscillations ν a ↔ν s can reveal itself as big effects in observations of supernova neutrinos and high-energy (HE) neutrinos. In the case of HE neutrinos they can provide a very large diffuse flux of active neutrinos unconstrained by the e-m cascade upper limit

  15. Mirror Confinement Systems: project summaries

    International Nuclear Information System (INIS)

    1980-07-01

    This report contains descriptions of the projects supported by the Mirror Confinement Systems (MCS) Division of the Office of Fusion Energy. The individual project summaries were prepared by the principal investigators, in collaboration with MCS staff office, and include objectives and milestones for each project. In addition to project summaries, statements of Division objectives and budget summaries are also provided

  16. MHD stability of tandem mirrors

    International Nuclear Information System (INIS)

    Poulsen, P.; Molvik, A.; Shearer, J.

    1982-01-01

    The TMX-Upgrade experiment was described, and the manner in which various plasma parameters could be affected was discussed. The initial analysis of the MHD stability of the tandem mirror was also discussed, with emphasis on the negative tandem configuration

  17. Status of tandem mirror theory

    International Nuclear Information System (INIS)

    Baldwin, D.E.

    1979-01-01

    This report contains the text and slides used for the review talk on tandem mirror theory presented at the meeting of the Division of Plasma Physics, A.P.S., Boston, MA, November 12-16, 1979. Topics covered include classical confinement, equilibria, MHD- and micro-stability, radial transport, and thermal barriers

  18. Mirror research: status and prospects

    International Nuclear Information System (INIS)

    Baldwin, D.E.

    1983-01-01

    The tandem mirror program has evolved considerably in the last decade. Of significance is the viable reactor concept embodied in the MARS design. An aggressive experimental program culminating in the operation of MFTF-B in late 1986, will provide a firm basis for refining the MARS design as necessary for constructing a reactor prototype in the 1990s

  19. Three mirror pairs of fermion families

    International Nuclear Information System (INIS)

    Montvay, I.

    1988-01-01

    A simple model with three mirror pairs of fermion families is considered which allows for a substantial mixing between the mirror fermion partners without conflicting with known phenomenology. (orig.)

  20. Deformable mirrors : Design fundamentals for force actuation of continuous facesheets

    NARCIS (Netherlands)

    Ravensbergen, S.K.; Hamelinck, R.F.H.M.; Rosielle, P.C.J.N.; Steinbuch, M.

    2009-01-01

    Adaptive Optics is established as essential technology in current and future ground based (extremely) large telescopes to compensate for atmospheric turbulence. Deformable mirrors for astronomic purposes have a high number of actuators (> 10k), a relatively large stroke (> 10µm) on a small spacing

  1. Chip-To-Chip Optical Interconnection Using MEMS Mirrors

    Science.gov (United States)

    2009-03-26

    power generated through a resistor is a function of this common current but different resistances, different amounts of heat are generated in the two...Chiu, “Modeling and control of piezo - electric cantilever beam micro mirror and micro laser arrays to reduce image band- ing in electrophotographic

  2. Smoke & Mirrors: The Canadian Tobacco War | CRDI - Centre de ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    "An outstanding achievement." Tobacco Control: An International Journal. "A must read for potential or current lobbyists against tobacco consumption in Canada and in developing countries" Annals of the Royal College of Physicians and Surgeons of Canada. Smoke & Mirrors provides an insider's view of the Canadian ...

  3. 270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

    2011-11-01

    TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

  4. A 0.18 μm CMOS fluorescent detector system for bio-sensing application

    Science.gov (United States)

    Nan, Liu; Guoping, Chen; Zhiliang, Hong

    2009-01-01

    A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm2 and consumes 37 mW.

  5. Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip

    Science.gov (United States)

    Nakane, R.; Shuto, Y.; Sukegawa, H.; Wen, Z. C.; Yamamoto, S.; Mitani, S.; Tanaka, M.; Inomata, K.; Sugahara, S.

    2014-12-01

    We demonstrate monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depends on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition on it and successive chemical-mechanical polish (CMP) process for the surface, the fabricated MTJs on the chip exhibits a sufficiently large TMR ratio (>140%) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs show clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90% is achieved. These magnetocurrent behaviour is quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.

  6. A 0.18 μm CMOS fluorescent detector system for bio-sensing application

    International Nuclear Information System (INIS)

    Liu Nan; Chen Guoping; Hong Zhiliang

    2009-01-01

    A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm 2 and consumes 37 mW.

  7. A CMOS Luminescence Intensity and Lifetime Dual Sensor Based on Multicycle Charge Modulation.

    Science.gov (United States)

    Fu, Guoqing; Sonkusale, Sameer R

    2018-06-01

    Luminescence plays an important role in many scientific and industrial applications. This paper proposes a novel complementary metal-oxide-semiconductor (CMOS) sensor chip that can realize both luminescence intensity and lifetime sensing. To enable high sensitivity, we propose parasitic insensitive multicycle charge modulation scheme for low-light lifetime extraction benefiting from simplicity, accuracy, and compatibility with deeply scaled CMOS process. The designed in-pixel capacitive transimpedance amplifier (CTIA) based structure is able to capture the weak luminescence-induced voltage signal by accumulating photon-generated charges in 25 discrete gated 10-ms time windows and 10-μs pulsewidth. A pinned photodiode on chip with 1.04 pA dark current is utilized for luminescence detection. The proposed CTIA-based circuitry can achieve 2.1-mV/(nW/cm 2 ) responsivity and 4.38-nW/cm 2 resolution at 630 nm wavelength for intensity measurement and 45-ns resolution for lifetime measurement. The sensor chip is employed for measuring time constants and luminescence lifetimes of an InGaN-based white light-emitting diode at different wavelengths. In addition, we demonstrate accurate measurement of the lifetime of an oxygen sensitive chromophore with sensitivity to oxygen concentration of 7.5%/ppm and 6%/ppm in both intensity and lifetime domain. This CMOS-enabled oxygen sensor was then employed to test water quality from different sources (tap water, lakes, and rivers).

  8. Radiation damage studies on STAR250 CMOS sensor at 300 keV for electron microscopy

    International Nuclear Information System (INIS)

    Faruqi, A.R.; Henderson, R.; Holmes, J.

    2006-01-01

    There is a pressing need for better electronic detectors to replace film for recording high-resolution images using electron cryomicroscopy. Our previous work has shown that direct electron detection in CMOS sensors is promising in terms of resolution and efficiency at 120 keV [A.R. Faruqi, R. Henderson, M. Prydderch, R. Turchetta, P. Allport, A. Evans, Nucl. Instr. and Meth. 546 (2005) 170], but in addition, the detectors must not be damaged by the electron irradiation. We now present new measurements on the radiation tolerance of a 25 μm pitch CMOS active-pixel sensor, the STAR250, which was designed by FillFactory using radiation-hard technology for space applications. Our tests on the STAR250 aimed to establish the imaging performance at 300 keV following irradiation. The residual contrast, measured on shadow images of a 300 mesh grid, was >80% after corrections for increased dark current, following irradiation with up to 5x10 7 electrons/pixel (equivalent to 80,000 electron/μm 2 ). A CMOS sensor with this degree of radiation tolerance would survive a year of normal usage for low-dose electron cryomicroscopy, which is a very useful advance

  9. The Axisymmetric Tandem Mirror: A Magnetic Mirror Concept Game Changer Magnet Mirror Status Study Group

    International Nuclear Information System (INIS)

    Simonen, T.; Cohen, R.; Correll, D.; Fowler, K.; Post, D.; Berk, H.; Horton, W.; Hooper, E.B.; Fisch, N.; Hassam, A.; Baldwin, D.; Pearlstein, D.; Logan, G.; Turner, B.; Moir, R.; Molvik, A.; Ryutov, D.; Ivanov, A.A; Kesner, J.; Cohen, B.; McLean, H.; Tamano, T.; Tang, X.Z.; Imai, T.

    2008-01-01

    Experimental results, theory and innovative ideas now point with increased confidence to the possibility of a Gas Dynamic Trap (GDT) neutron source which would be on the path to an attractively simple Axisymmetric Tandem Mirror (ATM) power plant. Although magnetic mirror research was terminated in the US 20 years ago, experiments continued in Japan (Gamma 10) and Russia (GDT), with a very small US effort. This research has now yielded data, increased understanding, and generated ideas resulting in the new concepts described here. Early mirror research was carried out with circular axisymmetric magnets. These plasmas were MHD unstable due to the unfavorable magnetic curvature near the mid-plane. Then the minimum-B concept emerged in which the field line curvature was everywhere favorable and the plasma was situated in a MHD stable magnetic well (70% average beta in 2XII-B). The Ioffe-bar or baseball-coil became the standard for over 40 years. In the 1980's, driven by success with minimum-B stabilization and the control of ion cyclotron instabilities in PR6 and 2XII-B, mirrors were viewed as a potentially attractive concept with near-term advantages as a lower Q neutron source for applications such as a hybrid fission fuel factory or toxic waste burner. However there are down sides to the minimum-B geometry: coil construction is complex; restraining magnetic forces limit field strength and mirror ratios. Furthermore, the magnetic field lines have geodesic curvature which introduces resonant and neoclassical radial transport as observed in early tandem mirror experiments. So what now leads us to think that simple axisymmetric mirror plasmas can be stable? The Russian GDT experiment achieves on-axis 60% beta by peaking of the kinetic plasma pressure near the mirror throat (where the curvature is favorable) to counter-balance the average unfavorable mid-plane curvature. Then a modest augmentation of plasma pressure in the expander results in stability. The GDT

  10. The Axisymmetric Tandem Mirror: A Magnetic Mirror Concept Game Changer Magnet Mirror Status Study Group

    Energy Technology Data Exchange (ETDEWEB)

    Simonen, T; Cohen, R; Correll, D; Fowler, K; Post, D; Berk, H; Horton, W; Hooper, E B; Fisch, N; Hassam, A; Baldwin, D; Pearlstein, D; Logan, G; Turner, B; Moir, R; Molvik, A; Ryutov, D; Ivanov, A A; Kesner, J; Cohen, B; McLean, H; Tamano, T; Tang, X Z; Imai, T

    2008-10-24

    Experimental results, theory and innovative ideas now point with increased confidence to the possibility of a Gas Dynamic Trap (GDT) neutron source which would be on the path to an attractively simple Axisymmetric Tandem Mirror (ATM) power plant. Although magnetic mirror research was terminated in the US 20 years ago, experiments continued in Japan (Gamma 10) and Russia (GDT), with a very small US effort. This research has now yielded data, increased understanding, and generated ideas resulting in the new concepts described here. Early mirror research was carried out with circular axisymmetric magnets. These plasmas were MHD unstable due to the unfavorable magnetic curvature near the mid-plane. Then the minimum-B concept emerged in which the field line curvature was everywhere favorable and the plasma was situated in a MHD stable magnetic well (70% average beta in 2XII-B). The Ioffe-bar or baseball-coil became the standard for over 40 years. In the 1980's, driven by success with minimum-B stabilization and the control of ion cyclotron instabilities in PR6 and 2XII-B, mirrors were viewed as a potentially attractive concept with near-term advantages as a lower Q neutron source for applications such as a hybrid fission fuel factory or toxic waste burner. However there are down sides to the minimum-B geometry: coil construction is complex; restraining magnetic forces limit field strength and mirror ratios. Furthermore, the magnetic field lines have geodesic curvature which introduces resonant and neoclassical radial transport as observed in early tandem mirror experiments. So what now leads us to think that simple axisymmetric mirror plasmas can be stable? The Russian GDT experiment achieves on-axis 60% beta by peaking of the kinetic plasma pressure near the mirror throat (where the curvature is favorable) to counter-balance the average unfavorable mid-plane curvature. Then a modest augmentation of plasma pressure in the expander results in stability. The GDT

  11. Mounting and Alignment of IXO Mirror Segments

    Science.gov (United States)

    Chan, Kai-Wing; Zhang, William; Evans, Tyler; McClelland, Ryan; Hong, Melinda; Mazzarella, James; Saha, Timo; Jalota, Lalit; Olsen, Lawrence; Byron, Glenn

    2010-01-01

    A suspension-mounting scheme is developed for the IXO (International X-ray Observatory) mirror segments in which the figure of the mirror segment is preserved in each stage of mounting. The mirror, first fixed on a thermally compatible strongback, is subsequently transported, aligned and transferred onto its mirror housing. In this paper, we shall outline the requirement, approaches, and recent progress of the suspension mount processes.

  12. Plasma impact on diagnostic mirrors in JET

    OpenAIRE

    A. Garcia-Carrasco; P. Petersson; M. Rubel; A. Widdowson; E. Fortuna-Zalesna; S. Jachmich; M. Brix; L. Marot

    2017-01-01

    Metallic mirrors will be essential components of all optical systems for plasma diagnosis in ITER. This contribution provides a comprehensive account on plasma impact on diagnostic mirrors in JET with the ITER-Like Wall. Specimens from the First Mirror Test and the lithium-beam diagnostic have been studied by spectrophotometry, ion beam analysis and electron microscopy. Test mirrors made of molybdenum were retrieved from the main chamber and the divertor after exposure to the 2013–2014 experi...

  13. Floating Gate CMOS Dosimeter With Frequency Output

    Science.gov (United States)

    Garcia-Moreno, E.; Isern, E.; Roca, M.; Picos, R.; Font, J.; Cesari, J.; Pineda, A.

    2012-04-01

    This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.

  14. Whistler mode startup in the Michigan Mirror Machine

    International Nuclear Information System (INIS)

    Booske, J.; Getty, W.D.; Gilgenbach, R.M.; Goodman, T.; Whaley, D.; Olivieri, R.; Pitcher, E.; Simonetti, L.

    1985-01-01

    Results of investigations of whistler mode ECRH plasma startup in the Michigan Mirror Machine are presented. Electron-velocity-distribution and plasma-spatial-distribution time evolution are characterized by measurements from axially and radially moveable Langmuir probes, an endloss current detector, an electron cyclotron emission radiometer, a foil-filtered X-ray detector, and a diamagnetic loop at the mirror midplane. Measurements of the buildup of both electron density and perpendicular pressure (nkT/sub perpendicular/) are compared to predictions from various numerical models. Both modeling and data suggest the creation of a highly anisotropic electron velocity distribution function with a ''sloshing electron'' axial density profile

  15. Elastoconductivity as a probe of broken mirror symmetries

    Energy Technology Data Exchange (ETDEWEB)

    Hlobil, Patrik; Maharaj, Akash V.; Hosur, Pavan; Shapiro, M. C.; Fisher, I. R.; Raghu, S.

    2015-07-27

    We propose the possible detection of broken mirror symmetries in correlated two-dimensional materials by elastotransport measurements. Using linear response theory we calculate the“shear conductivity” Γ x x , x y , defined as the linear change of the longitudinal conductivity σ x x due to a shear strain ε x y . This quantity can only be nonvanishing when in-plane mirror symmetries are broken and we discuss how candidate states in the cuprate pseudogap regime (e.g., various loop current or charge orders) may exhibit a finite shear conductivity. We also provide a realistic experimental protocol for detecting such a response.

  16. CMOS image sensor with contour enhancement

    Science.gov (United States)

    Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

    2010-10-01

    Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

  17. A Multipurpose CMOS Platform for Nanosensing

    Directory of Open Access Journals (Sweden)

    Alberto Bonanno

    2016-11-01

    Full Text Available This paper presents a customizable sensing system based on functionalized nanowires (NWs assembled onto complementary metal oxide semiconductor (CMOS technology. The Micro-for-Nano (M4N chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  18. A Multipurpose CMOS Platform for Nanosensing.

    Science.gov (United States)

    Bonanno, Alberto; Sanginario, Alessandro; Marasso, Simone L; Miccoli, Beatrice; Bejtka, Katarzyna; Benetto, Simone; Demarchi, Danilo

    2016-11-30

    This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW-229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  19. X-ray imaging with toroidal mirror

    International Nuclear Information System (INIS)

    Aoki, Sadao; Sakayanagi, Yoshimi

    1978-01-01

    X-ray imaging is made with a single toroidal mirror or two successive toroidal mirrors. Geometrical images at the Gaussian image plane are described by the ray trace. Application of a single toroidal mirror to small-angle scattering is presented. (author)

  20. Connection between adiabaticity and the mirror mode

    International Nuclear Information System (INIS)

    Cohen, R.H.

    1976-01-01

    The size of magnetic moment jumps of a particle in a long, thin equilibrium magnetic mirror field is shown to be related to the complex zeroes of the mirror mode parameter B + 4πdP/sub perpendicular//dB. A consequence is that adiabaticity places a lower limit on β than does the mirror mode

  1. A generalized construction of mirror manifolds

    International Nuclear Information System (INIS)

    Berglund, P.; Huebsch, T.

    1993-01-01

    We generalize the known method for explicit construction of mirror pairs of (2,2)-superconformal field theories, using the formalism of Landau-Ginzburg orbifolds. Geometrically, these theories are realized as Calabi-Yau hypersurfaces in weighted projective spaces. This generalization makes it possible to construct the mirror partners of many manifolds for which the mirror was not previously known. (orig.)

  2. The mirror neuron system : New frontiers

    NARCIS (Netherlands)

    Keysers, Christian; Fadiga, Luciano

    2008-01-01

    Since the discovery of mirror neurons, much effort has been invested into Studying their location and properties in the human brain. Here we review these original findings and introduce the Main topics of this special issue of Social Neuroscience. What does the mirror system code? How is the mirror

  3. Tandem mirror next step conceptual design

    International Nuclear Information System (INIS)

    Doggett, J.N.; Damm, C.C.; Bulmer, R.H.

    1980-01-01

    A study was made to define the features of the experimental mirror fusion device - The Tandem Mirror Next Step, or TMNS - that will bridge the gap between present mirror confinement experiments and a power-producing reactor. We outline the project goals, describe some initial device parameters, and relate the technological requirements to ongoing development programs

  4. High-order adaptive secondary mirrors: where are we?

    Science.gov (United States)

    Salinari, Piero; Sandler, David G.

    1998-09-01

    We discuss the current developments and the perspective performances of adaptive secondary mirrors for high order adaptive a correction on large ground based telescopes. The development of the basic techniques involved a large collaborative effort of public research Institutes and of private companies is now essentially complete. The next crucial step will be the construction of an adaptive secondary mirror for the 6.5 m MMT. Problems such as the fabrication of very thin mirrors, the low cost implementation of fast position sensors, of efficient and compact electromagnetic actuators, of the control and communication electronics, of the actuator control system, of the thermal control and of the mechanical layout can be considered as solved, in some cases with more than one viable solution. To verify performances at system level two complete prototypes have been built and tested, one at ThermoTrex and the other at Arcetri. The two prototypes adopt the same basic approach concerning actuators, sensor and support of the thin mirror, but differ in a number of aspects such as the material of the rigid back plate used as reference for the thin mirror, the number and surface density of the actuators, the solution adopted for the removal of the heat, and the design of the electronics. We discuss how the results obtained by of the two prototypes and by numerical simulations will guide the design of full size adaptive secondary units.

  5. Surface Slope Metrology on Deformable Soft X-ray Mirrors

    International Nuclear Information System (INIS)

    Yuan, Sheng; Yashchuk, Valeriy V.; Goldberg, Kenneth A.; Celestre, Rich; Church, Matthew; McKinney, Wayne R.; Morrison, Greg; Warwick, Tony

    2010-01-01

    We report on the current state of surface slope metrology on deformable mirrors for soft x-rays at the Advanced Light Source (ALS). While we are developing techniques for in situ at-wavelength tuning, we are refining methods of ex situ visible-light optical metrology to achieve sub-100-nrad accuracy. This paper reports on laboratory studies, measurements and tuning of a deformable test-KB mirror prior to its use. The test mirror was bent to a much different optical configuration than its original design, achieving a 0.38 micro-radian residual slope error. Modeling shows that in some cases, by including the image conjugate distance as an additional free parameter in the alignment, along with the two force couples, fourth-order tangential shape errors (the so-called bird shape) can be reduced or eliminated.

  6. Surface Slope Metrology on Deformable Soft X-ray Mirrors

    International Nuclear Information System (INIS)

    Yuan, S.; Yashchuk, V.V.; Goldberg, K.A.; Celestre, R.; Church, M.; McKinney, W.R.; Morrison, G.; Warwick, T.

    2009-01-01

    We report on the current state of surface slope metrology on deformable mirrors for soft x-rays at the Advanced Light Source (ALS). While we are developing techniques for in situ at-wavelength tuning, we are refining methods of ex situvisible-light optical metrology to achieve sub-100-nrad accuracy. This paper reports on laboratory studies, measurements and tuning of a deformable test-KB mirror prior to its use. The test mirror was bent to a much different optical configuration than its original design, achieving a 0.38 micro-radian residual slope error. Modeling shows that in some cases, by including the image conjugate distance as an additional free parameter in the alignment, along with the two force couples, fourth-order tangential shape errors (the so-called bird shape) can be reduced or eliminated.

  7. CMOS front ends for millimeter wave wireless communication systems

    CERN Document Server

    Deferm, Noël

    2015-01-01

    This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

  8. CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

    Science.gov (United States)

    Khan, Sherjeel M; Gumus, Abdurrahman; Nassar, Joanna M; Hussain, Muhammad M

    2018-04-01

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

    Science.gov (United States)

    Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

    2006-01-01

    This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

  10. Design of CMOS imaging system based on FPGA

    Science.gov (United States)

    Hu, Bo; Chen, Xiaolai

    2017-10-01

    In order to meet the needs of engineering applications for high dynamic range CMOS camera under the rolling shutter mode, a complete imaging system is designed based on the CMOS imaging sensor NSC1105. The paper decides CMOS+ADC+FPGA+Camera Link as processing architecture and introduces the design and implementation of the hardware system. As for camera software system, which consists of CMOS timing drive module, image acquisition module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The ISE 14.6 emulator ISim is used in the simulation of signals. The imaging experimental results show that the system exhibits a 1280*1024 pixel resolution, has a frame frequency of 25 fps and a dynamic range more than 120dB. The imaging quality of the system satisfies the requirement of the index.

  11. CMOS Enabled Microfluidic Systems for Healthcare Based Applications

    KAUST Repository

    Khan, Sherjeel M.; Gumus, Abdurrahman; Nassar, Joanna M.; Hussain, Muhammad Mustafa

    2018-01-01

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

  12. CMOS serial link for fully duplexed data communication

    Science.gov (United States)

    Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

    1995-04-01

    This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

  13. CMOS Enabled Microfluidic Systems for Healthcare Based Applications

    KAUST Repository

    Khan, Sherjeel M.

    2018-02-27

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

  14. A Single-Transistor Active Pixel CMOS Image Sensor Architecture

    International Nuclear Information System (INIS)

    Zhang Guo-An; He Jin; Zhang Dong-Wei; Su Yan-Mei; Wang Cheng; Chen Qin; Liang Hai-Lang; Ye Yun

    2012-01-01

    A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

  15. Depleted CMOS pixels for LHC proton–proton experiments

    International Nuclear Information System (INIS)

    Wermes, N.

    2016-01-01

    While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

  16. CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

    Directory of Open Access Journals (Sweden)

    Haitao Li

    2016-12-01

    Full Text Available Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

  17. System-in Package of Integrated Humidity Sensor Using CMOS-MEMS Technology.

    Science.gov (United States)

    Lee, Sung Pil

    2015-10-01

    Temperature/humidity microchips with micropump were fabricated using a CMOS-MEMS process and combined with ZigBee modules to implement a sensor system in package (SIP) for a ubiquitous sensor network (USN) and/or a wireless communication system. The current of a diode temperature sensor to temperature and a normalized current of FET humidity sensor to relative humidity showed linear characteristics, respectively, and the use of the micropump has enabled a faster response. A wireless reception module using the same protocol as that in transmission systems processed the received data within 10 m and showed temperature and humidity values in the display.

  18. EUV multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror

    NARCIS (Netherlands)

    Huang, Qiushi; Louis, Eric; Bijkerk, Frederik; de Boer, Meint J.; von Blanckenhagen, G.

    2016-01-01

    A multilayer mirror (M) reflecting extreme ultraviolet (EUV) radiation from a first wave-length range in a EUV spectral region comprises a substrate (SUB) and a stack of layers (SL) on the substrate, the stack of layers comprising layers comprising a low index material and a high index material, the

  19. Physics issues in mirror and tandem mirror systems

    International Nuclear Information System (INIS)

    Post, R.F.

    1984-01-01

    Over the years the study of the confinement of high temperature plasma in magnetic mirror systems has presented researchers with many unusual physics problems. Many of these issues are by now understood theoretically and documented experimentally. With the advent of the tandem mirror idea, some new issues have emerged and are now under intensive study. These include: (1) the generation and control of ambipolar confining potentials and their effect on axial confinement and, (2) the combined influence of nonaxisymmetric magnetic fields (used to ensure MHD stability) and electric magnetic particle drifts on radial transport. Physics considerations associated with these two categories of issues will be reviewed, including concepts for the control of radial transport, under study or proposed

  20. Mirror Neurons Modeled Through Spike-Timing-Dependent Plasticity are Affected by Channelopathies Associated with Autism Spectrum Disorder.

    Science.gov (United States)

    Antunes, Gabriela; Faria da Silva, Samuel F; Simoes de Souza, Fabio M

    2018-06-01

    Mirror neurons fire action potentials both when the agent performs a certain behavior and watches someone performing a similar action. Here, we present an original mirror neuron model based on the spike-timing-dependent plasticity (STDP) between two morpho-electrical models of neocortical pyramidal neurons. Both neurons fired spontaneously with basal firing rate that follows a Poisson distribution, and the STDP between them was modeled by the triplet algorithm. Our simulation results demonstrated that STDP is sufficient for the rise of mirror neuron function between the pairs of neocortical neurons. This is a proof of concept that pairs of neocortical neurons associating sensory inputs to motor outputs could operate like mirror neurons. In addition, we used the mirror neuron model to investigate whether channelopathies associated with autism spectrum disorder could impair the modeled mirror function. Our simulation results showed that impaired hyperpolarization-activated cationic currents (Ih) affected the mirror function between the pairs of neocortical neurons coupled by STDP.

  1. A novel CMOS SRAM feedback element for SEU environments

    International Nuclear Information System (INIS)

    Verghese, S.; Wortman, J.J.; Kerns, S.E.

    1987-01-01

    A hardened CMOS SRAM has been proposed which utilizes a leaky polysilicon Schottky diode placed in the feedback path to attain the SEU immunity of resistor-coupled SRAMs while improving the access speed of the cell. Novel polysilicon hybrid Schottky-resistor structures which emulate the leaky diodes have been designed and fabricated. The elements' design criteria and methods of fulfilling them are presented along with a practical implementation scheme for CMOS SRAM cells

  2. CMOS Image Sensors: Electronic Camera On A Chip

    Science.gov (United States)

    Fossum, E. R.

    1995-01-01

    Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

  3. Poly-SiGe for MEMS-above-CMOS sensors

    CERN Document Server

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  4. Advancement of CMOS Doping Technology in an External Development Framework

    Science.gov (United States)

    Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

    2011-01-01

    The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

  5. Design optimization of radiation-hardened CMOS integrated circuits

    International Nuclear Information System (INIS)

    1975-01-01

    Ionizing-radiation-induced threshold voltage shifts in CMOS integrated circuits will drastically degrade circuit performance unless the design parameters related to the fabrication process are properly chosen. To formulate an approach to CMOS design optimization, experimentally observed analytical relationships showing strong dependences between threshold voltage shifts and silicon dioxide thickness are utilized. These measurements were made using radiation-hardened aluminum-gate CMOS inverter circuits and have been corroborated by independent data taken from MOS capacitor structures. Knowledge of these relationships allows one to define ranges of acceptable CMOS design parameters based upon radiation-hardening capabilities and post-irradiation performance specifications. Furthermore, they permit actual design optimization of CMOS integrated circuits which results in optimum pre- and post-irradiation performance with respect to speed, noise margins, and quiescent power consumption. Theoretical and experimental results of these procedures, the applications of which can mean the difference between failure and success of a CMOS integrated circuit in a radiation environment, are presented

  6. Mirror confinement systems: Final technical report

    International Nuclear Information System (INIS)

    1988-08-01

    This report contains: (1) A discussion of azimuthal asymmetrics and fluctuations in RFC-XX-M. Both lead to enhanced radial transport in RFC-XX-M, and presumably most other tandem mirror machines as well; A report on four operating modes of RFC-XX-M which were developed and studied as part of the collaboration. These operating modes were the simple tandem mode, the negative (floating) potential mode, the hot electron mode, and the ECH (electron cyclotron heating) mode; A pulsed rf heated discharge cleaning system which was developed for RFC-XX-M. This method of cleaning proved much more effective than normal glow discharge cleaning, and variations of it are currently in use on the GAMMA-10 tandem mirror and the JIPP TII-U tokamak at the Institute for Plasma Physics at Nagoya; Short descriptions of the diagnostics development and improvement done in conjunction with the work on RFC-XX-M; and a compilation of the work performed at the University of Tsukuba on GAMMA-10. Most of the effort on GAMMA-10 involved diagnostics development and improvement. 16 refs., 42 figs., 1 tab

  7. Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

    Science.gov (United States)

    Jukić, Tomislav; Brandl, Paul; Zimmermann, Horst

    2018-04-01

    The excess noise of avalanche photodiodes (APDs) integrated in a high-voltage (HV) CMOS process and in a pin-photodiode CMOS process, both with 0.35-μm structure sizes, is described. A precise excess noise measurement technique is applied using a laser source, a spectrum analyzer, a voltage source, a current meter, a cheap transimpedance amplifier, and a personal computer with a MATLAB program. In addition, usage for on-wafer measurements is demonstrated. The measurement technique is verified with a low excess noise APD as a reference device with known ratio k = 0.01 of the impact ionization coefficients. The k-factor of an APD developed in HV CMOS is determined more accurately than known before. In addition, it is shown that the excess noise of the pin-photodiode CMOS APD depends on the optical power for avalanche gains above 35 and that modulation doping can suppress this power dependence. Modulation doping, however, increases the excess noise.

  8. Development of a Two-Dimensional Array of Individually Addressable Micro-Mirrors for NGST Application

    Science.gov (United States)

    Dutta, S. B.; Mott, D. B.; Allen, C. A.; Ewin, A. J.; Jhabvala, M. D.; Kotecki, C. A.; Kuhn, J. L.; MacKenty, J. W.

    2000-05-01

    NASA's missions of the 21st century will use small, low cost, efficient instruments for Earth and Space Science studies. Development of technologies that accommodate these requirements is essential for space applications. Micro Electro Mechanical Systems (MEMS) technology development for sensors and actuators plays a major role in this effort. We are developing a two dimensional array of individually addressable, cryogenic micro-mirrors, a MEMS based component, specifically for application in the Multi Object Spectrometer (MOS) in NGST. Two-dimensional, individually addressable and tiltable aluminum micro-mirror-arrays (MMA) have been developed and prototype arrays of different sizes have been fabricated in the Detector Development Laboratory of NASA, GSFC. Each micro-mirror of the array has 100micronx100micron pixel size and is capable of tilting +/- 10 degrees by electrostatic actuation. We have completed extensive analytical studies and performed laboratory tests to compare model predictions with actual performance of a 3x3 array. The mirrors have been tested to operate at cryogenic temperature. Recently we have completed the integration of a CMOS based address and driver circuit for the MMA with its mechanical structure. Our goal is to extend the development to a 1024x1024 array, primarily for NGST and also for other imaging and spectroscopy applications. For NGST MOS, MMAs will be used as a reflective slit-mask at a focal plane of the spectrometer providing a large field of view together with diffraction limited angular resolution for a grating spectrometer. Selected areas of the mirror-array will be tilted to select portions of the scene so that observation of up to 1000 simultaneous spectra of sparse targets will be possible. This provides a factor of 100 improvement in observing speed over conventional spectrometers. Details of the technology development along with its application to NGST will be discussed. This work is supported by the GSFC Director

  9. Mirror hybrid reactor optimization studies

    International Nuclear Information System (INIS)

    Bender, D.J.

    1976-01-01

    A system model of the mirror hybrid reactor has been developed. The major components of the model include (1) the reactor description, (2) a capital cost analysis, (3) various fuel management schemes, and (4) an economic analysis that includes the hybrid plus its associated fission burner reactors. The results presented describe the optimization of the mirror hybrid reactor, the objective being to minimize the cost of electricity from the hybrid fission-burner reactor complex. We have examined hybrid reactors with two types of blankets, one containing natural uranium, the other thorium. The major difference between the two optimized reactors is that the uranium hybrid is a significant net electrical power producer, whereas the thorium hybrid just about breaks even on electrical power. Our projected costs for fissile fuel production are approximately 50 $/g for 239 Pu and approximately 125 $/g for 233 U

  10. Mirror Fusion vacuum technology developments

    International Nuclear Information System (INIS)

    Batzer, T.H.; Call, W.R.

    1983-01-01

    Magnetic Mirror Fusion experiments, such as MFTF-B+T (Mirror Fusion Test Facility-B, Tritium Upgrade) and foreseeable follow-on devices, have operational and maintenance requirements that have not yet been fully demonstrated. Among those associated with vacuum technology are the very-high continuous-pumping speeds, 10 7 to 10 8 l/s for D 2 , T 2 and, to a lesser extent, He; the early detection of water leaks from the very-high heat-flux neutral-beam dumps and the detection and location of leaks in the superconducting magnets not protected by guard vacuums. Possible solutions to these problems have been identified and considerable progress has been made toward successfully demonstrating their feasibility

  11. Mirror fusion vacuum technology developments

    International Nuclear Information System (INIS)

    Batzer, T.H.; Call, W.R.

    1983-01-01

    Magnetic Mirror Fusion experiments, such as MFTF-B+T (Mirror Fusion Test Facility-B, Tritium Upgrade) and foreseeable follow-on devices, have operational and maintenance requirements that have not yet been fully demonstrated. Among those associated with vacuum technology are the very-high continuous-pumping speeds, 10 7 to 10 8 l/s for D 2 , T 2 and, to a lesser extent, He; the early detection of water leaks from the very-high heat-flux neutral-beam dumps and the detection and location of leaks in the superconducting magnets not protected by guard vacuums. Possible solutions to these problems have been identified and considerable progress has been made toward successfully demonstrating their feasibility

  12. Imitation, empathy, and mirror neurons.

    Science.gov (United States)

    Iacoboni, Marco

    2009-01-01

    There is a convergence between cognitive models of imitation, constructs derived from social psychology studies on mimicry and empathy, and recent empirical findings from the neurosciences. The ideomotor framework of human actions assumes a common representational format for action and perception that facilitates imitation. Furthermore, the associative sequence learning model of imitation proposes that experience-based Hebbian learning forms links between sensory processing of the actions of others and motor plans. Social psychology studies have demonstrated that imitation and mimicry are pervasive, automatic, and facilitate empathy. Neuroscience investigations have demonstrated physiological mechanisms of mirroring at single-cell and neural-system levels that support the cognitive and social psychology constructs. Why were these neural mechanisms selected, and what is their adaptive advantage? Neural mirroring solves the "problem of other minds" (how we can access and understand the minds of others) and makes intersubjectivity possible, thus facilitating social behavior.

  13. Mirror decay of $^{75}$Sr

    CERN Document Server

    Huikari, J; Algora, A; Cederkäll, J; Courtin, S; Dessagne, P; Fraile-Prieto, L M; Franchoo, S; Fynbo, H O U; Huang Wan Xia; Jokinen, A; Knipper, A; Maréchal, F; Miehé, C; Nácher, E; Peräjärvi, K; Poirier, E; Weissman, L; Äystö, J

    2003-01-01

    The beta -decay of /sup 75/Sr to its mirror nucleus /sup 75/Rb was studied at the ISOLDE PSB facility at CERN by means of beta -delayed gamma and proton spectroscopy. The decay Q-value and beta -delayed gamma intensity were measured for the first time. These results, 10.60+or-0.22 MeV and 4.5/sub -0.7//sup +1.9/%, together with accurate measurements of the beta -decay half-life and beta -delayed proton branching ratio yielded the Gamow-Teller strength 0.35+or-0.05 for the mirror transition. Implications of the results on studies of deformation effects and on the path of the rapid proton capture process are discussed. (24 refs).

  14. MINIMARS tandem mirror reactor study

    International Nuclear Information System (INIS)

    Perkins, L.J.; Logan, B.G.; Doggett, J.N.

    1986-01-01

    During 1985-1986, Lawrence Livermore National Lab., in partnership with the Fusion Engineering Design Center of Oak Ridge National Lab., the Univ. of Wisconsin, TRW, Grumman Aerospace Corporation, General Dynamics/Convair, Argonne National Lab., and the Canadian Fusion Fuels Technology Project, has conducted the conceptual design of MINIMARS, a small commercial tandem mirror reactor with novel octopole end plugs. With a net electric output of 600 MW(e), MINIMARS is expressly designed for short (∼4- to 5-yr) construction time, factory-built modules, and a passively safe blanket and thermal cycle. In this way, we intend to achieve a small reactor based on the tandem mirror principle that will minimize utility financial risk, thereby providing an attractive alternative to the more conventional large fusion plant designs encountered to date

  15. Imitation, mirror neurons and autism

    OpenAIRE

    Williams, Justin H.G.; Whiten, Andrew; Suddendorf, Thomas; Perrett, David I.

    2001-01-01

    Various deficits in the cognitive functioning of people with autism have been documented in recent years but these provide only partial explanations for the condition. We focus instead on an imitative disturbance involving difficulties both in copying actions and in inhibiting more stereotyped mimicking, such as echolalia. A candidate for the neural basis of this disturbance may be found in a recently discovered class of neurons in frontal cortex, 'mirror neurons' (MNs). These neurons show ac...

  16. A Radiation Hardened by Design CMOS ASIC for Thermopile Readouts

    Science.gov (United States)

    Quilligan, G.; Aslam, S.; DuMonthier, J.

    2012-01-01

    A radiation hardened by design (RHBD) mixed-signal application specific integrated circuit (ASIC) has been designed for a thermopile readout for operation in the harsh Jovian orbital environment. The multi-channel digitizer (MCD) ASIC includes 18 low noise amplifier channels which have tunable gain/filtering coefficients, a 16-bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The 18 channels, SDADC and controller were designed to operate with immunity to single event latchup (SEL) and to at least 10 Mrad total ionizing dose (TID). The ASIC also contains a radiation tolerant 16-bit 20 MHz Nyquist ADC for general purpose instrumentation digitizer needs. The ASIC is currently undergoing fabrication in a commercial 180 nm CMOS process. Although this ASIC was designed specifically for the harsh radiation environment of the NASA led JEO mission it is suitable for integration into instrumentation payloads 011 the ESA JUICE mission where the radiation hardness requirements are slightly less stringent.

  17. A refractory metal gate approach for micronic CMOS technology

    International Nuclear Information System (INIS)

    Lubowiecki, V.; Ledys, J.L.; Plossu, C.; Balland, B.

    1987-01-01

    In the future, devices scaling down, integration density and performance improvements are going to bring a number of conventional circuit design and process techniques to their fundamental limits. To avoid any severe limitations in MOS ULSI (Ultra Large Scale Integration) technologies, interconnection materials and schemes are required to emerge, in order to face the Megabits memory field. Among those, the gate approach will obviously take a keyrole, when the operating speed of ULSI chips will reach the practical upper limits imposed by parasitic resistances and capacitances which stem from the circuit interconnect wiring. Even if fairly suitable for MOS process, doped polycrystalline silicon is being gradually replaced by refractory metal silicide or polycide structures, which match better with low resistivity requirements. However, as we approach the submicronic IC's, higher conductivity materials will be paid more and more attention. Recently, works have been devoted and published on refractory metal gate technologies. Molybdenum or tungsten, deposited either by CVD or PVD methods, are currently reported even if some drawbacks in their process integration still remain. This paper is willing to present such an approach based on tungsten (more reliable than Molybdenum deposited by LPCVD (giving more conductive and more stable films than PVD). Deposition process will be first described. Then CMOS process flow will allow us to focus on specific refractory metal gate issues. Finally, electrical and physical properties will be assessed, which will demonstrate the feasibility of such a technology as well as the compatibility of the tungsten with most of the usual techniques

  18. Passive radiation detection using optically active CMOS sensors

    Science.gov (United States)

    Dosiek, Luke; Schalk, Patrick D.

    2013-05-01

    Recently, there have been a number of small-scale and hobbyist successes in employing commodity CMOS-based camera sensors for radiation detection. For example, several smartphone applications initially developed for use in areas near the Fukushima nuclear disaster are capable of detecting radiation using a cell phone camera, provided opaque tape is placed over the lens. In all current useful implementations, it is required that the sensor not be exposed to visible light. We seek to build a system that does not have this restriction. While building such a system would require sophisticated signal processing, it would nevertheless provide great benefits. In addition to fulfilling their primary function of image capture, cameras would also be able to detect unknown radiation sources even when the danger is considered to be low or non-existent. By experimentally profiling the image artifacts generated by gamma ray and β particle impacts, algorithms are developed to identify the unique features of radiation exposure, while discarding optical interaction and thermal noise effects. Preliminary results focus on achieving this goal in a laboratory setting, without regard to integration time or computational complexity. However, future work will seek to address these additional issues.

  19. CMOS Image Sensor with a Built-in Lane Detector

    Directory of Open Access Journals (Sweden)

    Li-Chen Fu

    2009-03-01

    Full Text Available This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC or Digital Signal Processor (DSP, the proposed imager, without extra Analog to Digital Converter (ADC circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 x 2,389.8 mm, and the package uses 40 pin Dual-In-Package (DIP. The pixel cell size is 18.45 x 21.8 mm and the core size of photodiode is 12.45 x 9.6 mm; the resulting fill factor is 29.7%.

  20. Radiation Tolerant Design with 0.18-micron CMOS Technology

    CERN Document Server

    Chen, Li; Durdle , Nelson G.

    This thesis discusse s th e issues r elated to the us e of enclosed-gate layou t trans isto rs and guard rings in a 0.18 μ m CMOS technology in order to im prove the radiation tolerance of ASICs. The thin gate oxides of subm icron technologies ar e inherently m ore radiation tole rant tha n the thick er oxides present in less advanced technologies. Using a commercial deep subm icron technology to bu ild up radiation-ha rdened circuits introduces several advantages com pared to a dedicated radiation-ha rd technology, such as speed, power, area, stability, and expense. Som e novel aspects related to the use of encl osed-gate layout transist ors are presented in this th esis. A m odel to calculate the aspect ratio is introduced and verified. Some im portant electrica l par ameters of the tran sistors such as threshold voltage, leakage current, subthreshold slope, and transconducta nce are studied before and afte...

  1. CMOS Image Sensor with a Built-in Lane Detector.

    Science.gov (United States)

    Hsiao, Pei-Yung; Cheng, Hsien-Chein; Huang, Shih-Shinh; Fu, Li-Chen

    2009-01-01

    This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%.

  2. 10^3 Segment MEMS Deformable-Mirror Process Development, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Iris AO will extend its proven segmented MEMS deformable mirror architecture to large array sizes required for high-contrast astrophysical imagers. Current...

  3. Development of a 750x750 pixels CMOS imager sensor for tracking applications

    Science.gov (United States)

    Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

    2017-11-01

    Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750x750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750x750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest… A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750x750 image sensor such as low power CMOS design (3.3V, power consumption<100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on

  4. The manufacturing and metrology of off-axis mirrors

    Science.gov (United States)

    Penzkofer, Karlheinz; Rascher, Rolf; Küpper, Lutz; Liebl, Johannes

    2015-10-01

    Especially in the area of the large mirror manufacturing only a few manufacturers are capable to produce optical surfaces of high quality. Therefore a deterministic process should be developed in the project IFasO. In the field of telescope optics off-axis optical systems are becoming increasingly important. These systems try to avoid an obstructing of the incoming light by moving the secondary mirror out of the primary mirror's optical axis. This advantage leads to an increasing market for this type of optical surface. Until now off-axis mirrors were difficult or almost impossible to produce. With the processes developed in IFasO, high quality mirrors become possible. For this reason, this paper describes the manufacturing of off-axis surfaces and its problems. The mirror production used in the project IFasO is based on the specific design of the CNC center developed by the company Optotech. This center UPG2000 is capable of grinding, polishing, sagitta measurement and interferometric measurement in one mounting of the specimen. Usually a large optics has to be transported during their manufacturing after every individual process step. There is always a risk of damage of the specimen. The exact orientation of the surface relatively to the tool position is also required. This takes a huge amount of time and makes up most of the production time. In this presentation the use of UPG2000 and the next steps within the process development are described. In the current status the manufacturing of large off-axis elements with a PV < λ/10 rms is reproducible.

  5. Smart Makeup Mirror: Computer Augmented Mirror to Aid Makeup Application

    OpenAIRE

    岩渕, 絵里子; 椎尾, 一郎

    2008-01-01

    In this paper, we present the system that aids people in wearing makeup easily and make the process enjoyable. The proposed system is the Smart Makeup Mirror device, which is an electronic dressing table that facilitates the process of makeup application. In this system, we place a high-resolution camera on top of a computer display. We developed some functions such as Automatic zoom to a specific part of the face, Display our face from various angles , and Simulation of the lighting conditio...

  6. Simulation of SEU transients in CMOS ICs

    International Nuclear Information System (INIS)

    Kaul, N.; Bhuva, B.L.; Kerns, S.E.

    1991-01-01

    This paper reports that available analytical models of the number of single-event-induced errors (SEU) in combinational logic systems are not easily applicable to real integrated circuits (ICs). An efficient computer simulation algorithm set, SITA, predicts the vulnerability of data stored in and processed by complex combinational logic circuits to SEU. SITA is described in detail to allow researchers to incorporate it into their error analysis packages. Required simulation algorithms are based on approximate closed-form equations modeling individual device behavior in CMOS logic units. Device-level simulation is used to estimate the probability that ion-device interactions produce erroneous signals capable of propagating to a latch (or n output node), and logic-level simulation to predict the spread of such erroneous, latched information through the IC. Simulation results are compared to those from SPICE for several circuit and logic configurations. SITA results are comparable to this established circuit-level code, and SITA can analyze circuits with state-of-the-art device densities (which SPICE cannot). At all IC complexity levels, SITAS offers several factors of 10 savings in simulation time over SPICE

  7. Fast Hopping Frequency Generation in Digital CMOS

    CERN Document Server

    Farazian, Mohammad; Gudem, Prasad S

    2013-01-01

    Overcoming the agility limitations of conventional frequency synthesizers in multi-band OFDM ultra wideband is a key research goal in digital technology. This volume outlines a frequency plan that can generate all the required frequencies from a single fixed frequency, able to implement center frequencies with no more than two levels of SSB mixing. It recognizes the need for future synthesizers to bypass on-chip inductors and operate at low voltages to enable the increased integration and efficiency of networked appliances. The author examines in depth the architecture of the dividers that generate the necessary frequencies from a single base frequency and are capable of establishing a fractional division ratio.   Presenting the first CMOS inductorless single PLL 14-band frequency synthesizer for MB-OFDMUWB makes this volume a key addition to the literature, and with the synthesizer capable of arbitrary band-hopping in less than two nanoseconds, it operates well within the desired range on a 1.2-volt power s...

  8. Electrothermal frequency references in standard CMOS

    CERN Document Server

    Kashmiri, S Mahdi

    2013-01-01

    This book describes an alternative method of accurate on-chip frequency generation in standard CMOS IC processes. This method exploits the thermal-diffusivity of silicon, the rate at which heat diffuses through a silicon substrate.  This is the first book describing thermal-diffusivity-based frequency references, including the complete theoretical methodology supported by practical realizations that prove the feasibility of the method.  Coverage also includes several circuit and system-level solutions for the analog electronic circuit design challenges faced.   ·         Surveys the state-of-the-art in all-silicon frequency references; ·         Examines the thermal properties of silicon as a solution for the challenge of on-chip accurate frequency generation; ·         Uses simplified modeling approaches that allow an electronics engineer easily to simulate the electrothermal elements; ·         Follows a top-down methodology in circuit design, in which system-level des...

  9. Experimental verification of on-chip CMOS fractional-order capacitor emulators

    KAUST Repository

    Tsirimokou, G.; Psychalinos, C.; Salama, Khaled N.; Elwakil, A.S.

    2016-01-01

    The experimental results from a fabricated integrated circuit of fractional-order capacitor emulators are reported. The chip contains emulators of capacitors of orders 0.3, 0.4, 0.5, 0.6 and 0.7 with nano-Farad pseudo-capacitances that can be adjusted through a bias current. Two off-chip capacitors are used to set the bandwidth of each emulator independently. The chip was designed in Austria microsystems (AMS) 0.35μ CMOS. © 2016 The Institution of Engineering and Technology.

  10. A Wideband Balun LNA I/Q-Mixer combination in 65nm CMOS

    NARCIS (Netherlands)

    Blaakmeer, S.C.; Klumperink, Eric A.M.; Leenaerts, D.M.W.; Nauta, Bram

    2008-01-01

    An inductor-less LNA-mixer topology merges an I/Q current-commutating mixer with a noise-canceling balun/LNA. The topology achieves >18dB conversion gain, a flat NF<5.5dB, IIP2=+20dBm and IIP3=-3dBm from 500MHz to 7GHz. The core circuit consumes 16mW and occupies less than 0.01mm2 in 65nm CMOS.

  11. Experimental verification of on-chip CMOS fractional-order capacitor emulators

    KAUST Repository

    Tsirimokou, G.

    2016-06-13

    The experimental results from a fabricated integrated circuit of fractional-order capacitor emulators are reported. The chip contains emulators of capacitors of orders 0.3, 0.4, 0.5, 0.6 and 0.7 with nano-Farad pseudo-capacitances that can be adjusted through a bias current. Two off-chip capacitors are used to set the bandwidth of each emulator independently. The chip was designed in Austria microsystems (AMS) 0.35μ CMOS. © 2016 The Institution of Engineering and Technology.

  12. A novel compact model for on-chip stacked transformers in RF-CMOS technology

    Science.gov (United States)

    Jun, Liu; Jincai, Wen; Qian, Zhao; Lingling, Sun

    2013-08-01

    A novel compact model for on-chip stacked transformers is presented. The proposed model topology gives a clear distinction to the eddy current, resistive and capacitive losses of the primary and secondary coils in the substrate. A method to analytically determine the non-ideal parasitics between the primary coil and substrate is provided. The model is further verified by the excellent match between the measured and simulated S -parameters on the extracted parameters for a 1 : 1 stacked transformer manufactured in a commercial RF-CMOS technology.

  13. Radiation hardness evaluation of the commercial 150 nm CMOS process using 60Co source

    International Nuclear Information System (INIS)

    Carna, M; Havranek, M; Hejtmanek, M; Janoska, Z; Marcisovsky, M; Neue, G; Tomasek, L; Vrba, V

    2014-01-01

    We present a study of radiation effects on MOSFET transistors irradiated with a 60 Co source to a total absorbed dose of 1.5 Mrad. The transistor test structures were manufactured using a commercial 150 nm CMOS process and are composed of transistors of different types (NMOS and PMOS), dimensions and insulation from the bulk material by means of deep n-wells. We have observed a degradation of electrical characteristics of both PMOS and NMOS transistors, namely a large increase of the leakage current of the NMOS transistors after irradiation

  14. Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

    Directory of Open Access Journals (Sweden)

    Maria-Alexandra Paun

    2016-01-01

    Full Text Available A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structures. On this occasion, numerical information on the input resistance, Hall voltage, conduction current, and electrical potential distribution has been obtained. Experimental results for the absolute sensitivity, offset, and offset temperature drift have also been provided. A quadratic behavior of the residual offset with the temperature was obtained and the temperature points leading to the minimum offset for the three Hall cells were identified.

  15. Maintenance and testing of anodized aluminum mirrors on the Whipple 10 m Whipple Telescope

    Science.gov (United States)

    Badran, H. M.; Weekes, T. C.

    2001-08-01

    Threshold energy sensitivity depends not only on the high reflectivity of the mirrors used in atmospheric Cherenkov telescopes but also on the maintenance of this reflectivity over months/years. The successful application of a mirror maintenance technique depends on the type of mirror coating and the contamination that must be removed. The uncovered mirrors in use on the 10-m Whipple gamma-ray telescope are anodized aluminum mirrors. A standard cleaning technique for such mirrors is not available. With the aim of extending the life of the aluminum coating exposed to the Mt ˙Hopkins environment, several cleaning procedures were tested on mirrors that had been exposed for three years. Evaluation of the most effective cleaners is presented. Preliminary results are also presented from a long-term experiment using newly coated mirrors at the proposed VERITAS site and at the current 10 m site. This experiment is designed to reveal the rates at which the reflectance degrades as a function of time, depth of anodization, storage direction, degree of covering, and maintenance procedures.

  16. A New CMOS Posicast Pre-shaper for Vibration Reduction of CMOS Op-Amps

    Science.gov (United States)

    Rasoulzadeh, M.; Ghaznavi-Ghoushchi, M. B.

    2010-06-01

    Posicast-based control is a widely used method in vibration reduction of lightly damped oscillatory systems especially in mechanical fields. The target systems to apply Posicast method are the systems which are excited by pulse inputs. Using the Posicast idea, the input pulse is reshaped into a new pulse, which is called Posicast pulse. Applying the generated Posicast pulse reduces the undesired oscillatory manner of under-test systems. In this paper, a fully CMOS Pulse pre-shaper circuit for realization of Posicast command is proposed. Our design is based on delay-and-add approach for the incoming pulses. The delay is done via a modified Schmitt Trigger-like circuit. The adder circuit is implemented by a simple non-binary analog adder terminated by a passive element. Our proposed design has a reasonable flexibility in configuration of time delay and amplitude of the desired pulse-like shapes. The delay is controlled via the delay unit and the pre-shaped pulse's amplitudes are controlled by an analog adder unit. The overall system has 18 MOS transistors, one small capacitor, and one resistor. To verify the effectiveness of the recommended method, it is experienced on a real CMOS Op-Amp. HSPICE simulation results, on 0.25u technology, show a significant reduction on overshoot and settling time of the under-test Op-Amp. The mentioned reduction is more than 95% in overshoot and more than 60% in settling time of the system.

  17. A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Qianneng; Wang Yongsheng; Lai Fengchang, E-mail: qianneng@hit.edu.c [Microelectronics Center, Harbin Institute of Technology, Harbin 150001 (China)

    2009-04-15

    A capacitor-free CMOS low-dropout (LDO) regulator for system-on-chip (SoC) applications is presented. By adopting AC-boosting and active-feedback frequency compensation (ACB-AFFC), the proposed LDO regulator, which is independent of an off-chip capacitor, provides high closed-loop stability. Moreover, a slew rate enhancement circuit is adopted to increase the slew rate and decrease the output voltage dips when the load current is suddenly switched from low to high. The LDO regulator is designed and fabricated in a 0.6 mum CMOS process. The active silicon area is only 770 x 472 mum{sup 2}. Experimental results show that the total error of the output voltage due to line variation is less than +-0.197%. The load regulation is only 0.35 mV/mA when the load current changes from 0 to 100 mA.

  18. A differential low-voltage high gain current-mode integrated RF receiver front-end

    Energy Technology Data Exchange (ETDEWEB)

    Wang Chunhua; Ma Minglin; Sun Jingru; Du Sichun; Guo Xiaorong; He Haizhen, E-mail: wch1227164@sina.com [School of Information Science and Technology, Hunan University, Changsha 410082 (China)

    2011-02-15

    A differential low-voltage high gain current-mode integrated RF front end for an 802.11b WLAN is proposed. It contains a differential transconductance low noise amplifier (G{sub m}-LNA) and a differential current-mode down converted mixer. The single terminal of the G{sub m}-LNA contains just one MOS transistor, two capacitors and two inductors. The gate-source shunt capacitors, C{sub x1} and C{sub x2}, can not only reduce the effects of gate-source C{sub gs} on resonance frequency and input-matching impedance, but they also enable the gate inductance L{sub g1,2} to be selected at a very small value. The current-mode mixer is composed of four switched current mirrors. Adjusting the ratio of the drain channel sizes of the switched current mirrors can increase the gain of the mixer and accordingly increase the gain of RF receiver front-end. The RF front-end operates under 1 V supply voltage. The receiver RFIC was fabricated using a chartered 0.18 {mu}m CMOS process. The integrated RF receiver front-end has a measured power conversion gain of 17.48 dB and an input referred third-order intercept point (IIP3) of -7.02 dBm. The total noise figure is 4.5 dB and the power is only 14 mW by post-simulations. (semiconductor integrated circuits)

  19. Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

    NARCIS (Netherlands)

    Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

  20. Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process...