Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process

Science.gov (United States)

Saleem, Amin M.; Andersson, Rickard; Desmaris, Vincent; Enoksson, Peter

2018-01-01

Complete miniaturized on-chip integrated solid-state capacitors have been fabricated based on conformal coating of vertically aligned carbon nanofibers (VACNFs), using a CMOS temperature compatible microfabrication processes. The 5 μm long VACNFs, operating as electrode, are grown on a silicon substrate and conformally coated by aluminum oxide dielectric using atomic layer deposition (ALD) technique. The areal (footprint) capacitance density value of 11-15 nF/mm2 is realized with high reproducibility. The CMOS temperature compatible microfabrication, ultra-low profile (less than 7 μm thickness) and high capacitance density would enables direct integration of micro energy storage devices on the active CMOS chip, multi-chip package and passives on silicon or glass interposer. A model is developed to calculate the surface area of VACNFs and the effective capacitance from the devices. It is thereby shown that 71% of surface area of the VACNFs has contributed to the measured capacitance, and by using the entire area the capacitance can potentially be increased.

Magnetic resonance imaging-compatible tactile sensing device based on a piezoelectric array.

Science.gov (United States)

Hamed, Abbi; Masamune, Ken; Tse, Zion Tsz Ho; Lamperth, Michael; Dohi, Takeyoshi

2012-07-01

Minimally invasive surgery is a widely used medical technique, one of the drawbacks of which is the loss of direct sense of touch during the operation. Palpation is the use of fingertips to explore and make fast assessments of tissue morphology. Although technologies are developed to equip minimally invasive surgery tools with haptic feedback capabilities, the majority focus on tissue stiffness profiling and tool-tissue interaction force measurement. For greatly increased diagnostic capability, a magnetic resonance imaging-compatible tactile sensor design is proposed, which allows minimally invasive surgery to be performed under image guidance, combining the strong capability of magnetic resonance imaging soft tissue and intuitive palpation. The sensing unit is based on a piezoelectric sensor methodology, which conforms to the stringent mechanical and electrical design requirements imposed by the magnetic resonance environment The sensor mechanical design and the device integration to a 0.2 Tesla open magnetic resonance imaging scanner are described, together with the device's magnetic resonance compatibility testing. Its design limitations and potential future improvements are also discussed. A tactile sensing unit based on a piezoelectric sensor principle is proposed, which is designed for magnetic resonance imaging guided interventions.

Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

Science.gov (United States)

Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

2013-05-20

We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

Science.gov (United States)

DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

2011-12-05

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

A digital output piezoelectric accelerometer using a Pb(Zr, Ti)O3 thin film array electrically connected in series

International Nuclear Information System (INIS)

Kobayashi, T; Okada, H; Maeda, R; Itoh, T; Masuda, T

2010-01-01

A digital output piezoelectric accelerometer is proposed to realize an ultra-low power consumption wireless sensor node. The accelerometer has patterned piezoelectric thin films (piezoelectric plates) electrically connected in series accompanied by CMOS switches at the end of some of the piezoelectric plates. The connected piezoelectric plates amplify the output voltage without the use of amplifiers. The CMOS switches turn on when the output voltage of the piezoelectric plates is higher than the CMOS threshold voltage. The piezoelectric accelerometer converts the acceleration into a number of on-state CMOS switches, which can be called the digital output. The proposed digital output piezoelectric accelerometer, using Pb(Zr, Ti)O 3 (PZT) thin films as the piezoelectric material, was fabricated through a microelectromechanical system (MEMS) microfabrication process. The output voltage was found to be amplified by the number of connected piezoelectric plates. The DC output voltage obtained by using an AC to DC conversion circuit is proportional to the number of connections. The results show the potential for realizing the proposed digital output piezoelectric accelerometer

Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line

Science.gov (United States)

León Pérez, Edgar A. A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader

2018-05-01

We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications. He is currently a Postdoctoral Researcher in the Institute of Nanotechnologies of Lyon (INL), INSA de Lyon, France, in the Electronics Department. His current research include indium oxide nanoparticles for non-volatile memory applications, and the integrations of these devices in CMOS BEOL.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

Science.gov (United States)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

CMOS-compatible batch processing of monolayer MoS2 MOSFETs

Science.gov (United States)

Xiong, Kuanchen; Kim, Hyun; Marstell, Roderick J.; Göritz, Alexander; Wipf, Christian; Li, Lei; Park, Ji-Hoon; Luo, Xi; Wietstruck, Matthias; Madjar, Asher; Strandwitz, Nicholas C.; Kaynak, Mehmet; Lee, Young Hee; Hwang, James C. M.

2018-04-01

Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.

Electrical Interconnections Through CMOS Wafers

DEFF Research Database (Denmark)

Rasmussen, Frank Engel

2003-01-01

Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

On the integration of ultrananocrystalline diamond (UNCD with CMOS chip

Directory of Open Access Journals (Sweden)

Hongyi Mi

2017-03-01

Full Text Available A low temperature deposition of high quality ultrananocrystalline diamond (UNCD film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

Enhancing the piezoelectric properties of flexible hybrid AlN materials using semi-crystalline parylene

Science.gov (United States)

Jackson, Nathan; Mathewson, Alan

2017-04-01

Flexible piezoelectric materials are desired for numerous applications including biomedical, wearable, and flexible electronics. However, most flexible piezoelectric materials are not compatible with CMOS fabrication technology, which is desired for most MEMS applications. This paper reports on the development of a hybrid flexible piezoelectric material consisting of aluminium nitride (AlN) and a semi-crystalline polymer substrate. Various types of semi-crystalline parylene and polyimide materials were investigated as the polymer substrate. The crystallinity and surfaces of the polymer substrates were modified by micro-roughening and annealing in order to determine the effects on the AlN quality. The AlN crystallinity and piezoelectric properties decreased when the polymer surfaces were treated with O2 plasma. However, increasing the crystallinity of the parylene substrate prior to deposition of AlN caused enhanced c-axis (002) AlN crystallinity and piezoelectric response of the AlN. Piezoelectric properties of 200 °C annealed parylene-N substrate resulted in an AlN d 33 value of 4.87 pm V-1 compared to 2.17 pm V-1 for AlN on polyimide and 4.0 pm V-1 for unannealed AlN/parylene-N. The electrical response measurements to an applied force demonstrated that the parylene/AlN hybrid material had higher V pp (0.918 V) than commercial flexible piezoelectric material (PVDF) (V pp 0.36 V). The results in this paper demonstrate that the piezoelectric properties of a flexible AlN hybrid material can be enhanced by increasing the crystallinity of the polymer substrate, and the enhanced properties can function better than previous flexible piezoelectrics.

CMOS compatible route for GaAs based large scale flexible and transparent electronics

KAUST Repository

Nour, Maha A.; Ghoneim, Mohamed T.; Droopad, Ravi; Hussain, Muhammad Mustafa

2014-01-01

Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

CMOS compatible route for GaAs based large scale flexible and transparent electronics

KAUST Repository

Nour, Maha A.

2014-08-01

Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2014-01-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe

National Research Council Canada - National Science Library

An, S

2001-01-01

.... Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step...

Design and fabrication of a CMOS-compatible MHP gas sensor

Directory of Open Access Journals (Sweden)

Ying Li

2014-03-01

Full Text Available A novel micro-hotplate (MHP gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO2 film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3% in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

Science.gov (United States)

Chien, W. C.; Chen, Y. C.; Lai, E. K.; Lee, F. M.; Lin, Y. Y.; Chuang, Alfred T. H.; Chang, K. P.; Yao, Y. D.; Chou, T. H.; Lin, H. M.; Lee, M. H.; Shih, Y. H.; Hsieh, K. Y.; Lu, Chih-Yuan

2011-03-01

Tungsten oxide (WO X ) resistive memory (ReRAM), a two-terminal CMOS compatible nonvolatile memory, has shown promise to surpass the existing flash memory in terms of scalability, switching speed, and potential for 3D stacking. The memory layer, WO X , can be easily fabricated by down-stream plasma oxidation (DSPO) or rapid thermal oxidation (RTO) of W plugs universally used in CMOS circuits. Results of conductive AFM (C-AFM) experiment suggest the switching mechanism is dominated by the REDOX (Reduction-oxidation) reaction—the creation of conducting filaments leads to a low resistance state and the rupturing of the filaments results in a high resistance state. Our experimental results show that the reactions happen at the TE/WO X interface. With this understanding in mind, we proposed two approaches to boost the memory performance: (i) using DSPO to treat the RTO WO X surface and (ii) using Pt TE, which forms a Schottky barrier with WO X . Both approaches, especially the latter, significantly reduce the forming current and enlarge the memory window.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.

2014-06-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

Surface-micromachined Bragg Reflectors Based on Multiple Airgap/SiO2 Layers for CMOS-compatible Fabry-perot Filters in the UV-visible Spectral Range

NARCIS (Netherlands)

Ghaderi, M.; Ayerden, N.P.; De Graaf, G.; Wolffenbuttel, R.F.

2014-01-01

In CMOS-compatible optical filter designs, SiO2 is often used as the low-index material, limiting the optical contrast (nHi/nLo) to about 2. Using the air as low-index material improves the optical contrast by about 50%, thus increasing the reflectivity and bandwidth at a given design complexity.

CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

KAUST Repository

Ghoneim, Mohamed T.; Hanna, Amir; Hussain, Muhammad Mustafa

2014-01-01

Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

KAUST Repository

Ghoneim, Mohamed T.

2014-08-01

Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

Science.gov (United States)

Yuryev, Vladimir A; Arapkina, Larisa V

2011-09-05

Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001 surface: nucleation, morphology, and CMOS compatibility

Directory of Open Access Journals (Sweden)

Yuryev Vladimir

2011-01-01

Full Text Available Abstract Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001 surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C and high (≳600°C temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001 surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001 quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

KAUST Repository

Ghoneim, Mohamed T.; Alfaraj, Nasir; Torres-Sevilla, Galo A.; Fahad, Hossain M.; Hussain, Muhammad Mustafa

2016-01-01

. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied

A photovoltaic-driven and energy-autonomous CMOS implantable sensor.

Science.gov (United States)

Ayazian, Sahar; Akhavan, Vahid A; Soenen, Eric; Hassibi, Arjang

2012-08-01

An energy-autonomous, photovoltaic (PV)-driven and MRI-compatible CMOS implantable sensor is presented. On-chip P+/N-well diode arrays are used as CMOS-compatible PV cells to harvest μW's of power from the light that penetrates into the tissue. In this 2.5 mm × 2.5 mm sub-μW integrated system, the in-vivo physiological signals are first measured by using a subthreshold ring oscillator-based sensor, the acquired data is then modulated into a frequency-shift keying (FSK) signal, and finally transmitted neuromorphically to the skin surface by using a pair of polarized electrodes.

Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Energy Technology Data Exchange (ETDEWEB)

Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

2017-11-15

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Strong piezoelectricity in bioinspired peptide nanotubes.

Science.gov (United States)

Kholkin, Andrei; Amdursky, Nadav; Bdikin, Igor; Gazit, Ehud; Rosenman, Gil

2010-02-23

We show anomalously strong shear piezoelectric activity in self-assembled diphenylalanine peptide nanotubes (PNTs), indicating electric polarization directed along the tube axis. Comparison with well-known piezoelectric LiNbO(3) and lateral signal calibration yields sufficiently high effective piezoelectric coefficient values of at least 60 pm/V (shear response for tubes of approximately 200 nm in diameter). PNTs demonstrate linear deformation without irreversible degradation in a broad range of driving voltages. The results open up a wide avenue for developing new generations of "green" piezoelectric materials and piezonanodevices based on bioactive tubular nanostructures potentially compatible with human tissue.

Ultralow-loss CMOS copper plasmonic waveguides

DEFF Research Database (Denmark)

Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

2016-01-01

with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

CMOS dot matrix microdisplay

Science.gov (United States)

Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

2011-03-01

Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

Poly-SiGe for MEMS-above-CMOS sensors

CERN Document Server

Gonzalez Ruiz, Pilar; Witvrouw, Ann

2014-01-01

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.

Science.gov (United States)

Lee, Myung-Jae; Youn, Jin-Sung; Park, Kang-Yeob; Choi, Woo-Young

2014-02-10

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

Decal electronics for printed high performance cmos electronic systems

KAUST Repository

Hussain, Muhammad Mustafa

2017-11-23

High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

Micromachined high-performance RF passives in CMOS substrate

International Nuclear Information System (INIS)

Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

2016-01-01

This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

Science.gov (United States)

Wallace, Robert M.

2001-03-01

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

Science.gov (United States)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Application of CMOS Technology to Silicon Photomultiplier Sensors

Science.gov (United States)

D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

2017-01-01

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

PARAMETERIZED LAYOUT SYNTHESIS OF A CMOS-COMPATIBLE SCANNING MICROMIRROR WITH ELECTROTHERMAL ACTUATION AND BIMODAL RESONANT BEHAVIOR

Directory of Open Access Journals (Sweden)

Sergio Camacho León

2011-01-01

Full Text Available Este trabajo presenta una metodología de síntesis de parámetros para la automatización del diseño de un microespejo de escaneado compatible CMOS con comportamiento resonante bimodal. El microespejo está suspendido por actuadores térmicos bimorfos en voladizo con accionamiento fuera del plano. La metodología propone la optimización de espesores y el escaneo en el segundo modo de resonancia como estrategias para superar el conflicto característico entre el desempeño estático y dinámico del dispositivo. El objetivo es obtener automáticamente los parámetros de diseño del dispositivo que, de manera concurrente, maximizan el ángulo de rotación, minimizan el consumo de energía y satisfacen tanto las limitaciones de fabricación de un proceso CMOS estándar como las especificaciones de alto nivel para la posición del eje de rotación en el segundo modo de resonancia, la frecuencia de escaneado y el voltaje máximo de actuación. La metodología utiliza un espacio de diseño de nivel intermedio, definido por la razón de resistencia térmica a resistencia eléctrica del dispositivo a temperatura ambiente, para acoplar las restricciones del esfuerzo térmico máximo con la densidad de corriente eléctrica máxima de los materiales CMOS. El procedimiento de evaluación de funciones objetivos se desarrolla sobre la base de un modelo de elementos concentrados de la resistencia térmica del dispositivo para explorar sistemáticamente el espacio de diseño utilizando variaciones paramétricas. La metodología se aplica para diseñar un microescáner que tiene aplicaciones en sistemas imagenológicos de coherencia óptica. El desempeño del microescáner sintetizado es verificado por simulaciones mediante el método de elementos finitos. Los resultados obtenidos numéricamente presentan un buen ajuste con las especificaciones de alto nivel.

A novel multi-actuation CMOS RF MEMS switch

Science.gov (United States)

Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

2008-12-01

This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

International Nuclear Information System (INIS)

Yu Xiaomei; Tang Yaquan; Zhang Haitao

2008-01-01

This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

Science.gov (United States)

Singh, Kirandeep; Kaur, Davinder

2017-02-01

The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

A CMOS 128-APS linear array integrated with a LVOF for highsensitivity and high-resolution micro-spectrophotometry

NARCIS (Netherlands)

Liu, C.; Emadi, A.; Wu, H.; De Graaf, G.; Wolffenbuttel, R.F.

2010-01-01

A linear array of 128 Active Pixel Sensors has been developed in standard CMOS technology and a Linear Variable Optical Filter (LVOF) is added using CMOS-compatible post-process, resulting in a single chip highly-integrated highresolution microspectrometer. The optical requirements imposed by the

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

Science.gov (United States)

Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2017-11-08

Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

KAUST Repository

Chen, Min Cheng; Lin, Chia Yi; Li, Kai Hsin; Li, Lain-Jong; Chen, Chang Hsiao; Chuang, Cheng Hao; Lee, Ming Dao; Chen, Yi Ju; Hou, Yun Fang; Lin, Chang Hsien; Chen, Chun Chi; Wu, Bo Wei; Wu, Cheng San; Yang, Ivy; Lee, Yao Jen; Yeh, Wen Kuan; Wang, Tahui; Yang, Fu Liang; Hu, Chenming

2014-01-01

Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

KAUST Repository

Chen, Min Cheng

2014-12-01

Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

Electromagnetic Investigation of a CMOS MEMS Inductive Microphone

Directory of Open Access Journals (Sweden)

Farès TOUNSI

2009-09-01

Full Text Available This paper presents a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone. We have shown, that the use of an alternative current (AC in the primary fixed inductor results in a substantially higher induced voltage in the secondary inductor comparing to the case when a direct current (DC is used. The expected increase of the induced voltage can be expressed by a voltage ratio of AC and DC solutions that is in the range of 3 to 6. A prototype fabrication of this microphone has been realized using a combination of standard CMOS 0.6 µm process with a CMOS-compatible post-process consisting in a bulk micromachining technology. The output voltage of the electrodynamic microphone that achieves the µV range can be increased by the use of the symmetric dual-layer spiral inductor structure.

Epoxy Chip-in-Carrier Integration and Screen-Printed Metalization for Multichannel Microfluidic Lab-on-CMOS Microsystems.

Science.gov (United States)

Li, Lin; Yin, Heyu; Mason, Andrew J

2018-04-01

The integration of biosensors, microfluidics, and CMOS instrumentation provides a compact lab-on-CMOS microsystem well suited for high throughput measurement. This paper describes a new epoxy chip-in-carrier integration process and two planar metalization techniques for lab-on-CMOS that enable on-CMOS electrochemical measurement with multichannel microfluidics. Several design approaches with different fabrication steps and materials were experimentally analyzed to identify an ideal process that can achieve desired capability with high yield and low material and tool cost. On-chip electrochemical measurements of the integrated assembly were performed to verify the functionality of the chip-in-carrier packaging and its capability for microfluidic integration. The newly developed CMOS-compatible epoxy chip-in-carrier process paves the way for full implementation of many lab-on-CMOS applications with CMOS ICs as core electronic instruments.

CMOS-compatible silicon nanowire field-effect transistors for ultrasensitive and label-free microRNAs sensing.

Science.gov (United States)

Lu, Na; Gao, Anran; Dai, Pengfei; Song, Shiping; Fan, Chunhai; Wang, Yuelin; Li, Tie

2014-05-28

MicroRNAs (miRNAs) have been regarded as promising biomarkers for the diagnosis and prognosis of early-stage cancer as their expression levels are associated with different types of human cancers. However, it is a challenge to produce low-cost miRNA sensors, as well as retain a high sensitivity, both of which are essential factors that must be considered in fabricating nanoscale biosensors and in future biomedical applications. To address such challenges, we develop a complementary metal oxide semiconductor (CMOS)-compatible SiNW-FET biosensor fabricated by an anisotropic wet etching technology with self-limitation which provides a much lower manufacturing cost and an ultrahigh sensitivity. This nanosensor shows a rapid (< 1 minute) detection of miR-21 and miR-205, with a low limit of detection (LOD) of 1 zeptomole (ca. 600 copies), as well as an excellent discrimination for single-nucleotide mismatched sequences of tumor-associated miRNAs. To investigate its applicability in real settings, we have detected miRNAs in total RNA extracted from lung cancer cells as well as human serum samples using the nanosensors, which demonstrates their potential use in identifying clinical samples for early diagnosis of cancer. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector

NARCIS (Netherlands)

Lee, M.J.; Youn, J.S.; Park, K.Y.; Choi, W.Y.

2014-01-01

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche

CMOS MEMS capacitive absolute pressure sensor

International Nuclear Information System (INIS)

Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

2013-01-01

This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

Automatic kelvin probe compatible with ultrahigh vacuum

NARCIS (Netherlands)

Baikie, I.D.; van der Werf, Kees; Oerbekke, H.; Broeze, J.; van Silfhout, Arend

1989-01-01

This article describes a new type of in situ ultrahigh‐vacuum compatible kelvin probe based on a voice‐coil driving mechanism. This design exhibits several advantages over conventional mechanical feed‐through and (in situ) piezoelectric devices in regard to the possibility of multiple probe

Very low drift and high sensitivity of nanocrystal-TiO2 sensing membrane on pH-ISFET fabricated by CMOS compatible process

International Nuclear Information System (INIS)

Bunjongpru, W.; Sungthong, A.; Porntheeraphat, S.; Rayanasukha, Y.; Pankiew, A.; Jeamsaksiri, W.; Srisuwan, A.; Chaisriratanakul, W.; Chaowicharat, E.; Klunngien, N.; Hruanun, C.; Poyai, A.; Nukeaw, J.

2013-01-01

High sensitivity and very low drift rate pH sensors are successfully prepared by using nanocrystal-TiO 2 as sensing membrane of ion sensitive field effect transistor (ISFET) device fabricated via CMOS process. This paper describes the physical properties and sensing characteristics of the TiO 2 membrane prepared by annealing Ti and TiN thin films that deposited on SiO 2 /p-Si substrates through reactive DC magnetron sputtering system. The X-ray diffraction, scanning electron microscopy and Auger electron spectroscopy were used to investigate the structural and morphological features of deposited films after they had been subjected to annealing at various temperatures. The experimental results are interpreted in terms of the effects of amorphous-to-crystalline phase transition and subsequent oxidation of the annealed films. The electrolyte–insulator–semiconductor (EIS) device incorporating Ti-O-N membrane that had been obtained by annealing of TiN thin film at 850 °C exhibited a higher sensitivity (57 mV/pH), a higher linearity (1), a lower hysteresis voltage (1 mV in the pH cycle of 7 → 4 → 7 → 10 → 7), and a smaller drift rate (0.246 mV/h) than did those devices prepared at the other annealing temperatures. Furthermore, this pH-sensing device fabrication process is fully compatible with CMOS fabrication process technology.

Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

Science.gov (United States)

Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

2015-10-01

In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

A back-illuminated megapixel CMOS image sensor

Science.gov (United States)

Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

2005-01-01

In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

Ultra-low Voltage CMOS Cascode Amplifier

OpenAIRE

Lehmann, Torsten; Cassia, Marco

2000-01-01

In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique.

Ultra-low Voltage CMOS Cascode Amplifier

DEFF Research Database (Denmark)

Lehmann, Torsten; Cassia, Marco

2000-01-01

In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique......, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique....

Growth and optical properties of CMOS-compatible silicon nanowires for photonic devices

Science.gov (United States)

Guichard, Alex Richard

Silicon (Si) is the dominant semiconductor material in both the microelectronic and photovoltaic industries. Despite its poor optical properties, Si is simply too abundant and useful to be completely abandoned in either industry. Since the initial discovery of efficient room temperature photoluminescence (PL) from porous Si and the following discoveries of PL and time-resolved optical gain from Si nanocrystals (Si-nc) in SiO2, many groups have studied the feasibility of making Si-based, CMOS-compatible electroluminescent devices and electrically pumped lasers. These studies have shown that for Si-ne sizes below about 10 nm, PL can be attributed to radiative recombination of confined excitons and quantum efficiencies can reach 90%. PL peak energies are blue-shifted from the bulk Si band edge of 1.1 eV due to the quantum confinement effect and PL decay lifetimes are on mus timescales. However, many unanswered questions still exist about both the ease of carrier injection and various non-radiative and loss mechanisms that are present. A potential alternative material system to porous Si and Si-nc is Si nanowires (SiNWs). In this thesis, I examine the optical properties of SiNWs with diameters in the range of 3-30 nm fabricated by a number of compound metal oxide semiconductor (CMOS) compatible fabrication techniques including Chemical Vapor Deposition on metal nanoparticle coated substrates, catalytic wet etching of bulk Si and top-down electron-beam lithographic patterning. Using thermal oxidation and etching, we can increase the degree of confinement in the SiNWs. I demonstrate PL peaked in the visible and near-infrared (NIR) wavelength ranges that is tunable by controlling the crystalline SiNW core diameter, which is measured with dark field and high-resolution transmission electron microscopy. PL decay lifetimes of the SiNWs are on the order of 50 mus after proper surface passivation, which suggest that the PL is indeed from confined carriers in the SiNW cores

High-Field MRI-Compatible Needle Placement Robot for Prostate Interventions

OpenAIRE

SU, Hao; CAMILO, Alex; COLE, Gregory A.; HATA, Nobuhiko; TEMPANY, Clare M.; FISCHER, Gregory S.

2011-01-01

This paper presents the design of a magnetic resonance imaging (MRI) compatible needle placement system actuated by piezoelectric actuators for prostate brachytherapy and biopsy. An MRI-compatible modular 3 degree-of-freedom (DOF) needle driver module coupled with a 3-DOF x-y-z stage is proposed as a slave robot to precisely deliver radioactive brachytherapy seeds under interactive MRI guidance. The needle driver module provides for needle cannula rotation, needle insertion and cannula retrac...

Radiation-hardened CMOS integrated circuits

International Nuclear Information System (INIS)

Pikor, A.; Reiss, E.M.

1980-01-01

Substantial effort has been directed at radiation-hardening CMOS integrated circuits using various oxide processes. While most of these integrated circuits have been successful in demonstrating megarad hardness, further investigations have shown that the 'wet-oxide process' is most compatible with the RCA CD4000 Series process. This article describes advances in the wet-oxide process that have resulted in multimegarad hardness and yield to MIL-M-38510 screening requirements. The implementation of these advances into volume manufacturing is geared towards supplying devices for aerospace requirements such as the Defense Meterological Satellite program (DMSP) and the Global Positioning Satellite (GPS). (author)

High efficiency grating couplers based on shared process with CMOS MOSFETs

International Nuclear Information System (INIS)

Qiu Chao; Sheng Zhen; Wu Ai-Min; Wang Xi; Zou Shi-Chang; Gan Fu-Wan; Li Le; Albert Pang

2013-01-01

Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal—oxide—semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as a gate in the CMOS metal—oxide—semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ∼ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting.

Science.gov (United States)

Lu, Shaohua; Boussaid, Farid

2015-11-19

This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD) capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier.

An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting

Directory of Open Access Journals (Sweden)

Shaohua Lu

2015-11-01

Full Text Available This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier.

CMOS circuits manual

CERN Document Server

Marston, R M

1995-01-01

CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

Science.gov (United States)

Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

2018-03-01

Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

Science.gov (United States)

Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

2018-05-01

Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

UV lithography-based protein patterning on silicon: Towards the integration of bioactive surfaces and CMOS electronics

Energy Technology Data Exchange (ETDEWEB)

Lenci, S., E-mail: silvia.lenci@iet.unipi.it [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Tedeschi, L. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy); Pieri, F. [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Domenici, C. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy)

2011-08-01

A simple and fast methodology for protein patterning on silicon substrates is presented, providing an insight into possible issues related to the interaction between biological and microelectronic technologies. The method makes use of standard photoresist lithography and is oriented towards the implementation of biosensors containing Complementary Metal-Oxide-Semiconductor (CMOS) conditioning circuitry. Silicon surfaces with photoresist patterns were prepared and hydroxylated by means of resist- and CMOS backend-compatible solutions. Subsequent aminosilane deposition and resist lift-off in organic solvents resulted into well-controlled amino-terminated geometries. The discussion is focused on resist- and CMOS-compatibility problems related to the used chemicals. Some samples underwent gold nanoparticle (Au NP) labeling and Scanning Electron Microscopy (SEM) observation, in order to investigate the quality of the silane layer. Antibodies were immobilized on other samples, which were subsequently exposed to a fluorescently labeled antigen. Fluorescence microscopy observation showed that this method provides spatially selective immobilization of protein layers onto APTES-patterned silicon samples, while preserving protein reactivity inside the desired areas and low non-specific adsorption elsewhere. Strong covalent biomolecule binding was achieved, giving stable protein layers, which allows stringent binding conditions and a good binding specificity, really useful for biosensing.

CMOS-compatible plenoptic detector for LED lighting applications.

Science.gov (United States)

Neumann, Alexander; Ghasemi, Javad; Nezhadbadeh, Shima; Nie, Xiangyu; Zarkesh-Ha, Payman; Brueck, S R J

2015-09-07

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

Non-Magnetic On-Chip Resonant Acousto-Optic Isolator at 780 nm

Science.gov (United States)

2017-08-04

actuator on a piezoelectric substrate. We fabricated the device using only CMOS-compatible dielectric materials with the assistance of e- beam...on-chip, without the use of magnetic fields or magneto-optical materials. Our technical approach was to employ momentum-conservation in photon-phonon...interactions to break the propagation symmetry of light using a unidirectional acoustic pump. This acoustic wave was transduced using an RF-driven SAW

Piezoelectric ceramic implants: in vivo results.

Science.gov (United States)

Park, J B; Kelly, B J; Kenner, G H; von Recum, A F; Grether, M F; Coffeen, W W

1981-01-01

The suitability of barium titanate (BaTiO3) ceramic for direct substitution of hard tissues was evaluated using both electrically stimulated (piezoelectric) and inactive (nonpolarized) test implants. Textured cylindrical specimens, half of them made piezoelectric by polarization in a high electric field, were implanted into the cortex of the midshaft region of the femora of dogs for various periods of time. Interfacial healing and bio-compatibility of the implant material were studied using mechanical, microradiographical, and histological techniques. Our results indicate that barium titanate ceramic shows a very high degree of biocompatibility as evidenced by the absence of inflammatory or foreign body reactions at the implant-tissue interface. Furthermore, the material and its surface porosity allowed a high degree of bone ingrowth as evidenced by microradiography and a high degree of interfacial tensile strength. No difference was found between the piezoelectric and the electrically neutral implant-tissue interfaces. Possible reasons for this are discussed. The excellent mechanical properties of barium titanate, its superior biocompatibility, and the ability of bone to form a strong mechanical interfacial bond with it, makes this material a new candidate for further tests for hard tissue replacement.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

International Nuclear Information System (INIS)

Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.

2016-01-01

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

Science.gov (United States)

Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

2016-09-01

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

Energy Technology Data Exchange (ETDEWEB)

Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Affolder, A.; Buckland, M.; Meng, L. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I. [Department of Physics, Oxford University, Oxford (United Kingdom); and others

2016-09-21

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

Science.gov (United States)

Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

2015-12-01

Frequency reference and timing control devices are ubiquitous in electronic applications. There is at least one resonator required for each of this device. Currently electromechanical resonators such as crystal resonator, ceramic resonator are the ultimate choices. This tendency will probably keep going for many more years. However, current market demands for small size, low power consumption, cheap and reliable products, has divulged many limitations of this type of resonators. They cannot be integrated into standard CMOS (Complement metaloxide- semiconductor) IC (Integrated Circuit) due to material and fabrication process incompatibility. Currently, these devices are off-chip and they require external circuitries to interface with the ICs. This configuration significantly increases the overall size and cost of the entire electronic system. In addition, extra external connection, especially at high frequency, will potentially create negative impacts on the performance of the entire system due to signal degradation and parasitic effects. Furthermore, due to off-chip packaging nature, these devices are quite expensive, particularly for high frequency and high quality factor devices. To address these issues, researchers have been intensively studying on an alternative for type of resonator by utilizing the new emerging MEMS (Micro-electro-mechanical systems) technology. Recent progress in this field has demonstrated a MEMS resonator with resonant frequency of 2.97 GHz and quality factor (measured in vacuum) of 42900. Despite this great achievement, this prototype is still far from being fully integrated into CMOS system due to incompatibility in fabrication process and its high series motional impedance. On the other hand, fully integrated MEMS resonator had been demonstrated but at lower frequency and quality factor. We propose a design and fabrication process for a low cost, high frequency and a high quality MEMS resonator, which can be integrated into a standard

Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

Energy Technology Data Exchange (ETDEWEB)

Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2012-11-15

Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

International Nuclear Information System (INIS)

Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

2012-01-01

Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

A database to enable discovery and design of piezoelectric materials

Science.gov (United States)

de Jong, Maarten; Chen, Wei; Geerlings, Henry; Asta, Mark; Persson, Kristin Aslaug

2015-01-01

Piezoelectric materials are used in numerous applications requiring a coupling between electrical fields and mechanical strain. Despite the technological importance of this class of materials, for only a small fraction of all inorganic compounds which display compatible crystallographic symmetry, has piezoelectricity been characterized experimentally or computationally. In this work we employ first-principles calculations based on density functional perturbation theory to compute the piezoelectric tensors for nearly a thousand compounds, thereby increasing the available data for this property by more than an order of magnitude. The results are compared to select experimental data to establish the accuracy of the calculated properties. The details of the calculations are also presented, along with a description of the format of the database developed to make these computational results publicly available. In addition, the ways in which the database can be accessed and applied in materials development efforts are described. PMID:26451252

A database to enable discovery and design of piezoelectric materials.

Science.gov (United States)

de Jong, Maarten; Chen, Wei; Geerlings, Henry; Asta, Mark; Persson, Kristin Aslaug

2015-01-01

Piezoelectric materials are used in numerous applications requiring a coupling between electrical fields and mechanical strain. Despite the technological importance of this class of materials, for only a small fraction of all inorganic compounds which display compatible crystallographic symmetry, has piezoelectricity been characterized experimentally or computationally. In this work we employ first-principles calculations based on density functional perturbation theory to compute the piezoelectric tensors for nearly a thousand compounds, thereby increasing the available data for this property by more than an order of magnitude. The results are compared to select experimental data to establish the accuracy of the calculated properties. The details of the calculations are also presented, along with a description of the format of the database developed to make these computational results publicly available. In addition, the ways in which the database can be accessed and applied in materials development efforts are described.

Advanced CMOS device technologies for 45 nm node and below

Directory of Open Access Journals (Sweden)

A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak and S. Biesemans

2007-01-01

Full Text Available We review and discuss the latest developments and technology options for 45 nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices. One of the main metal gate (MG candidates for scaled CMOS technologies are fully silicided (FUSI gates. In this work, by means of a selective and controlled poly etch-back integration process, dual work-function Ni-based FUSI/HfSiON CMOS circuits with record ring oscillator performance (high-VT are reported (17 ps at VDD=1.1 V and 20 pA/μm Ioff, meeting the ITRS 45 nm node requirement for low-power (LP CMOS. Compatibility of FUSI and other MG with known stress boosters like stressed CESL (contact-etch-stop-layer with high intrinsic stress or embedded SiGe in the pMOS S/D regions is validated. To obtain MuGFET devices that are competitive, as compared to conventional planar bulk devices, and that meet the stringent drive and leakage current requirements for the 32 nm node and beyond, higher channel mobilities are required. Results obtained by several strain engineering methods are presented here.

Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

International Nuclear Information System (INIS)

Miucci, A; Gonzalez-Sevilla, S; Ferrere, D; Iacobucci, G; Rosa, A La; Muenstermann, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Obermann, T; Wermes, N; Garcia-Sciveres, M; Backhaus, M; Capeans, M; Feigl, S; Nessi, M; Pernegger, H; Ristic, B; George, M

2014-01-01

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO2/Si Multilayer Structure

Directory of Open Access Journals (Sweden)

Muhammad Zubair Aslam

2018-05-01

Full Text Available A Finite Element Method (FEM simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO2/Si Surface Acoustic Wave (SAW sensor to low concentrations of Volatile Organic Compounds (VOCs, that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS compatible AlN/SiO2/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO2 layers’ thicknesses over phase velocities and electromechanical coupling coefficients (k2 of two SAW modes (i.e., Rayleigh and Sezawa is analyzed and the optimal thicknesses of AlN and SiO2 layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.

Effects of criticality and disorder on piezoelectric properties of ferroelectrics

International Nuclear Information System (INIS)

Porta, Marcel; Lookman, Turab; Saxena, Avadh

2010-01-01

The piezoelectric response of BaTiO 3 is studied in the vicinity of the cubic to tetragonal phase transition, as a function of temperature and the applied electric field in the polar direction. We also investigate the influence of disorder. In the clean limit we obtain the divergence of the piezoelectric tensor at the critical point. The effect of a small amount of disorder is to translate the critical point in the temperature-electric field phase diagram. For large values of the disorder, the paraelectric to ferroelectric phase transition becomes diffuse but a maximum of the piezoelectric tensor is still obtained even though the divergence of the piezoelectric response is lost. These results are in agreement with experimental observations for the relaxor ferroelectric Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 . We use a Ginzburg-Landau model which explicitly includes the coupling of the polarization to the strain, the electrostatic interaction between polarizations, and a quenched random compressional stress field generated by point defects. The strain field and its associated elastic energy are written in terms of the stress field and the electric polarization by energy minimization subject to elastic compatibility.

Si light-emitting device in integrated photonic CMOS ICs

Science.gov (United States)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

CMOS VLSI Active-Pixel Sensor for Tracking

Science.gov (United States)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

Spiral-Shaped Piezoelectric MEMS Cantilever Array for Fully Implantable Hearing Systems

Directory of Open Access Journals (Sweden)

Péter Udvardi

2017-10-01

Full Text Available Fully implantable, self-powered hearing aids with no external unit could significantly increase the life quality of patients suffering severe hearing loss. This highly demanding concept, however, requires a strongly miniaturized device which is fully implantable in the middle/inner ear and includes the following components: frequency selective microphone or accelerometer, energy harvesting device, speech processor, and cochlear multielectrode. Here we demonstrate a low volume, piezoelectric micro-electromechanical system (MEMS cantilever array which is sensitive, even in the lower part of the voice frequency range (300–700 Hz. The test array consisting of 16 cantilevers has been fabricated by standard bulk micromachining using a Si-on-Insulator (SOI wafer and aluminum nitride (AlN as a complementary metal-oxide-semiconductor (CMOS and biocompatible piezoelectric material. The low frequency and low device footprint are ensured by Archimedean spiral geometry and Si seismic mass. Experimentally detected resonance frequencies were validated by an analytical model. The generated open circuit voltage (3–10 mV is sufficient for the direct analog conversion of the signals for cochlear multielectrode implants.

Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

International Nuclear Information System (INIS)

Iwaki, T; Covington, J A; Udrea, F; Ali, S Z; Guha, P K; Gardner, J W

2005-01-01

This paper describes the design of doped single crystal silicon (SCS) microhotplates for gas sensors. Resistive heaters are formed by an n+/p+ implantation into a Silicon-On-Insulator (SOI) wafer with a post-CMOS deep reactive ion etch to remove the silicon substrate. Hence they are fully compatible with CMOS technologies and allows for the integration of associated drive/detection circuitry. 2D electro-thermal models have been constructed and the results of numerical simulations using FEMLAB[reg] are given. Simulations show these micro-hotplates can operate at temperatures of 500 deg. C with a drive voltage of only 5 V and a power consumption of less than 100 mW

A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications

Science.gov (United States)

Kim, Seonyeong; Shin, Somyeong; Kim, Taekwang; Du, Hyewon; Song, Minho; Kim, Ki Soo; Cho, Seungmin; Lee, Sang Wook; Seo, Sunae

2017-04-01

The modulation of charge carrier concentration allows us to tune the Fermi level (E F) of graphene thanks to the low electronic density of states near the E F. The introduced metal oxide thin films as well as the modified transfer process can elaborately maneuver the amounts of charge carrier concentration in graphene. The self-encapsulation provides a solution to overcome the stability issues of metal oxide hole dopants. We have manipulated systematic graphene p-n junction structures for electronic or photonic application-compatible doping methods with current semiconducting process technology. We have demonstrated the anticipated transport properties on the designed heterojunction devices with non-destructive doping methods. This mitigates the device architecture limitation imposed in previously known doping methods. Furthermore, we employed E F-modulated graphene source/drain (S/D) electrodes in a low dimensional transition metal dichalcogenide field effect transistor (TMDFET). We have succeeded in fulfilling n-type, ambipolar, or p-type field effect transistors (FETs) by moving around only the graphene work function. Besides, the graphene/transition metal dichalcogenide (TMD) junction in either both p- and n-type transistor reveals linear voltage dependence with the enhanced contact resistance. We accomplished the complete conversion of p-/n-channel transistors with S/D tunable electrodes. The E F modulation using metal oxide facilitates graphene to access state-of-the-art complimentary-metal-oxide-semiconductor (CMOS) technology.

A 75 ps rms time resolution BiCMOS time to digital converter optimized for high rate imaging detectors

CERN Document Server

Hervé, C

2002-01-01

This paper presents an integrated time to digital converter (TDC) with a bin size adjustable in the range of 125 to 175 ps and a differential nonlinearity of +-0.3%. The TDC has four channels. Its architecture has been optimized for the readout of imaging detectors in use at Synchrotron Radiation facilities. In particular, a built-in logic flags piled-up events. Multi-hit patterns are also supported for other applications. Time measurements are extracted off chip at the maximum throughput of 40 MHz. The dynamic range is 14 bits. It has been fabricated in 0.8 mu m BiCMOS technology. Time critical inputs are PECL compatible whereas other signals are CMOS compatible. A second application specific integrated circuit (ASIC) has been developed which translates NIM electrical levels to PECL ones. Both circuits are used to assemble board level TDCs complying with industry standards like VME, NIM and PCI.

Development, Characterization and Piezoelectric Fatigue Behavior of Lead-Free Perovskite Piezoelectric Ceramics

Science.gov (United States)

Patterson, Eric Andrew

Much recent research has focused on the development lead-free perovskite piezoelectrics as environmentally compatible alternatives to lead zirconate titanate (PZT). Two main categories of lead free perovskite piezoelectric ceramic systems were investigated as potential replacements to lead zirconate titanate (PZT) for actuator devices. First, solid solutions based on Li, Ta, and Sb modified (K0.5Na0.5)NbO3 (KNN) lead-free perovskite systems were created using standard solid state methods. Secondly, Bi-based materials a variety of compositions were explored for (1-x)(Bi 0.5Na0.5)TiO3-xBi(Zn0.5Ti0.5)O 3 (BNT-BZT) and Bi(Zn0.5Ti0.5)O3-(Bi 0.5K0.5)TiO3-(Bi0.5Na0.5)TiO 3 (BZT-BKT-BNT). It was shown that when BNT-BKT is combined with increasing concentrations of Bi(Zn1/2i1/2)O3 (BZT), a transition from normal ferroelectric behavior to a material with large electric field induced strains was observed. The higher BZT containing compositions are characterized by large hysteretic strains(> 0.3%) with no negative strains that might indicate domain switching. This work summarizes and analyzes the fatigue behavior of the new generation of Pb-free piezoelectric materials. In piezoelectric materials, fatigue is observed as a degradation in the electromechanical properties under the application of a bipolar or unipolar cyclic electrical load. In Pb-based materials such as lead zirconate titanate (PZT), fatigue has been studied in great depth for both bulk and thin film applications. In PZT, fatigue can result from microcracking or electrode effects (especially in thin films). Ultimately, however, it is electronic and ionic point defects that are the most influential mechanism. Therefore, this work also analyzes the fatigue characteristics of bulk polycrystalline ceramics of the modified-KNN and BNT-BKT-BZT compositions developed. The defect chemistry that underpins the fatigue behavior will be examined and the results will be compared to the existing body of work on PZT. It will

Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

KAUST Repository

Ghoneim, Mohamed T.

2016-05-18

We present a comprehensive electrical performance assessment of hafnium silicate (HfSiOₓ) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied along and across the transistor channel lengths through a bending range of 0.5-5 cm radii for n-type and p-type FinFETs. Electrical measurements were carried out before and after bending, and all the bending measurements were taken in the actual flexed (bent) state to avoid relaxation and stress recovery. Global stress from substrate bending affects the devices in different ways compared with the well-studied uniaxial/biaxial localized strain. The global stress is dependent on the type of channel charge carriers, the orientation of the bending axis, and the physical gate length of the device. We, therefore, outline useful insights on the design strategies of flexible FinFETs in future free-form electronic applications.

Piezoelectric ZnO nanostructure for energy harvesting

CERN Document Server

Leprince-Wang, Yamin

2015-01-01

Over the past decade, ZnO as an important II-VI semiconductor has attracted much attention within the scientific community over the world owing to its numerous unique and prosperous properties. This material, considered as a "future material", especially in nanostructural format, has aroused many interesting research works due to its large range of applications in electronics, photonics, acoustics, energy and sensing. The bio-compatibility, piezoelectricity & low cost fabrication make ZnO nanostructure a very promising material for energy harvesting.

Design and calibration of a vacuum compatible scanning tunneling microscope

Science.gov (United States)

Abel, Phillip B.

1990-01-01

A vacuum compatible scanning tunneling microscope was designed and built, capable of imaging solid surfaces with atomic resolution. The single piezoelectric tube design is compact, and makes use of sample mounting stubs standard to a commercially available surface analysis system. Image collection and display is computer controlled, allowing storage of images for further analysis. Calibration results from atomic scale images are presented.

A 0.18 μm CMOS fluorescent detector system for bio-sensing application

Science.gov (United States)

Nan, Liu; Guoping, Chen; Zhiliang, Hong

2009-01-01

A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm2 and consumes 37 mW.

A 0.18 μm CMOS fluorescent detector system for bio-sensing application

International Nuclear Information System (INIS)

Liu Nan; Chen Guoping; Hong Zhiliang

2009-01-01

A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm 2 and consumes 37 mW.

A 2- μ m BiCMOS Rectifier-Free AC-DC Piezoelectric Energy Harvester-Charger IC.

Science.gov (United States)

Dongwon Kwon; Rincon-Mora, Gabriel A

2010-12-01

A fundamental problem that miniaturized systems, such as biomedical implants, face is limited space for storing energy, which translates to short operational life. Harvesting energy from the surrounding environment, which is virtually a boundless source at these scales, can overcome this restriction, if losses in the system are sufficiently low. To that end, the 2-μm bi-complementary metal-oxide semiconductor switched-inductor piezoelectric harvester prototype evaluated and presented in this paper eliminates the restrictions associated with a rectifier to produce and channel 30 μW from a periodic 72- μW piezoelectric source into a battery directly. In doing so, the circuit also increases the system's electrical damping force to draw more power and energy from the transducer, effectively increasing its mechanical-electrical efficiency by up to 78%. The system also harnesses up to 659 nJ from nonperiodic mechanical vibrations, which are more prevalent in the environment, with 6.1±1.5% to 8.8±6.9% of end-to-end mechanical-electrical efficiency.

Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon

International Nuclear Information System (INIS)

Holland, S.

1991-11-01

A CMOS process that is compatible with silicon p-i-n radiation detectors has been developed and characterized. A total of twelve mask layers are used in the process. The NMOS device is formed in a retrograde well while the PMOS device is fabricated directly in the high-resistivity silicon. Isolation characteristics are similar to a standard foundary CMOS process. Circuit performance using 3 μm design rules has been evaluated. The measured propagation delay and power-delay product for a 51-stage ring oscillator was 1.5 ns and 43 fJ, respectively. Measurements on a simple cascode amplifier results in a gain-bandwidth product of 200 MHz at a bias current of 15 μA. The input-referred noise of the cascode amplifier is 20 nV/√Hz at 1 MHz

Technology for the compatible integration of silicon detectors with readout electronics

International Nuclear Information System (INIS)

Zimmer, G.

1984-01-01

Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

Science.gov (United States)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

High-Field MRI-Compatible Needle Placement Robot for Prostate Interventions

Science.gov (United States)

SU, Hao; CAMILO, Alex; COLE, Gregory A.; HATA, Nobuhiko; TEMPANY, Clare M.; FISCHER, Gregory S.

2014-01-01

This paper presents the design of a magnetic resonance imaging (MRI) compatible needle placement system actuated by piezoelectric actuators for prostate brachytherapy and biopsy. An MRI-compatible modular 3 degree-of-freedom (DOF) needle driver module coupled with a 3-DOF x-y-z stage is proposed as a slave robot to precisely deliver radioactive brachytherapy seeds under interactive MRI guidance. The needle driver module provides for needle cannula rotation, needle insertion and cannula retraction to enable the brachytherapy procedure with the preloaded needles. The device mimics the manual physician gesture by two point grasping (hub and base) and provides direct force measurement of needle insertion force by fiber optic force sensors. The fabricated prototype is presented and an experiment with phantom trials in 3T MRI is analyzed to demonstrate the system compatibility. PMID:21335868

A General Design Methodology for Synchronous Early-Completion-Prediction Adders in Nano-CMOS DSP Architectures

Directory of Open Access Journals (Sweden)

Mauro Olivieri

2013-01-01

Full Text Available Synchronous early-completion-prediction adders (ECPAs are used for high clock rate and high-precision DSP datapaths, as they allow a dominant amount of single-cycle operations even if the worst-case carry propagation delay is longer than the clock period. Previous works have also demonstrated ECPA advantages for average leakage reduction and NBTI effects reduction in nanoscale CMOS technologies. This paper illustrates a general systematic methodology to design ECPA units, targeting nanoscale CMOS technologies, which is not available in the current literature yet. The method is fully compatible with standard VLSI macrocell design tools and standard adder structures and includes automatic definition of critical test patterns for postlayout verification. A design example is included, reporting speed and power data superior to previous works.

Piezoelectric valve

Science.gov (United States)

Petrenko, Serhiy Fedorovich

2013-01-15

A motorized valve has a housing having an inlet and an outlet to be connected to a pipeline, a saddle connected with the housing, a turn plug having a rod, the turn plug cooperating with the saddle, and a drive for turning the valve body and formed as a piezoelectric drive, the piezoelectric drive including a piezoelectric generator of radially directed standing acoustic waves, which is connected with the housing and is connectable with a pulse current source, and a rotor operatively connected with the piezoelectric generator and kinematically connected with the rod of the turn plug so as to turn the turn plug when the rotor is actuated by the piezoelectric generator.

Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

International Nuclear Information System (INIS)

Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

2011-01-01

This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

Applications of Si/SiGe heterostructures to CMOS devices

International Nuclear Information System (INIS)

Sidek, R.M.

1999-03-01

For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

Which Photodiode to Use: A Comparison of CMOS-Compatible Structures.

Science.gov (United States)

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2009-07-01

While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n(+)/p-sub, n-well/p-sub and p(+)/n-well/p-sub. All structures were fabricated in a 0.5 mum 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated-the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well/p-sub diode performed best in terms of sensitivity (an improvement of 3.5 x and 1.6 x over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1.5 x and 1.2 x improvement over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) while the p(+)/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity.

Reliable Piezoelectricity in Bilayer WSe2 for Piezoelectric Nanogenerators.

Science.gov (United States)

Lee, Ju-Hyuck; Park, Jae Young; Cho, Eun Bi; Kim, Tae Yun; Han, Sang A; Kim, Tae-Ho; Liu, Yanan; Kim, Sung Kyun; Roh, Chang Jae; Yoon, Hong-Joon; Ryu, Hanjun; Seung, Wanchul; Lee, Jong Seok; Lee, Jaichan; Kim, Sang-Woo

2017-08-01

Recently, piezoelectricity has been observed in 2D atomically thin materials, such as hexagonal-boron nitride, graphene, and transition metal dichalcogenides (TMDs). Specifically, exfoliated monolayer MoS 2 exhibits a high piezoelectricity that is comparable to that of traditional piezoelectric materials. However, monolayer TMD materials are not regarded as suitable for actual piezoelectric devices due to their insufficient mechanical durability for sustained operation while Bernal-stacked bilayer TMD materials lose noncentrosymmetry and consequently piezoelectricity. Here, it is shown that WSe 2 bilayers fabricated via turbostratic stacking have reliable piezoelectric properties that cannot be obtained from a mechanically exfoliated WSe 2 bilayer with Bernal stacking. Turbostratic stacking refers to the transfer of each chemical vapor deposition (CVD)-grown WSe 2 monolayer to allow for an increase in degrees of freedom in the bilayer symmetry, leading to noncentrosymmetry in the bilayers. In contrast, CVD-grown WSe 2 bilayers exhibit very weak piezoelectricity because of the energetics and crystallographic orientation. The flexible piezoelectric WSe 2 bilayers exhibit a prominent mechanical durability of up to 0.95% of strain as well as reliable energy harvesting performance, which is adequate to drive a small liquid crystal display without external energy sources, in contrast to monolayer WSe 2 for which the device performance becomes degraded above a strain of 0.63%. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

BioCMOS Interfaces and Co-Design

CERN Document Server

Carrara, Sandro

2013-01-01

The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

Integrated Cu-based TM-pass polarizer using CMOS technology platform

KAUST Repository

Ng, Tien Khee

2010-01-01

A transverse-magnetic-pass (TM-pass) copper (Cu) polarizer is proposed and analyzed using the previously published two-dimensional Method-of-Lines beam-propagation model. The proposed polarizer exhibits a simulated high-pass filter characteristics, with TM0 and TE0 mode transmissivity of >70% and <5%, respectively, in the wavelength regime of 1.2-1.6 μm. The polarization extinction ratio (PER) given by 10 log10 (PTM0)/(PTE0) is +11.5 dB across the high-pass wavelength regime. To the best of the authors\\' knowledge, we report here the smallest footprint CMOS-platform compatible TM-polarizer.

Superior piezoelectric composite films: taking advantage of carbon nanomaterials.

Science.gov (United States)

Saber, Nasser; Araby, Sherif; Meng, Qingshi; Hsu, Hung-Yao; Yan, Cheng; Azari, Sara; Lee, Sang-Heon; Xu, Yanan; Ma, Jun; Yu, Sirong

2014-01-31

Piezoelectric composites comprising an active phase of ferroelectric ceramic and a polymer matrix have recently found numerous sensory applications. However, it remains a major challenge to further improve their electromechanical response for advanced applications such as precision control and monitoring systems. We here investigated the incorporation of graphene platelets (GnPs) and multi-walled carbon nanotubes (MWNTs), each with various weight fractions, into PZT (lead zirconate titanate)/epoxy composites to produce three-phase nanocomposites. The nanocomposite films show markedly improved piezoelectric coefficients and electromechanical responses (50%) besides an enhancement of ~200% in stiffness. The carbon nanomaterials strengthened the impact of electric field on the PZT particles by appropriately raising the electrical conductivity of the epoxy. GnPs have been proved to be far more promising in improving the poling behavior and dynamic response than MWNTs. The superior dynamic sensitivity of GnP-reinforced composite may be caused by the GnPs' high load transfer efficiency arising from their two-dimensional geometry and good compatibility with the matrix. The reduced acoustic impedance mismatch resulting from the improved thermal conductance may also contribute to the higher sensitivity of GnP-reinforced composite. This research pointed out the potential of employing GnPs to develop highly sensitive piezoelectric composites for sensing applications.

Superior piezoelectric composite films: taking advantage of carbon nanomaterials

International Nuclear Information System (INIS)

Saber, Nasser; Araby, Sherif; Meng, Qingshi; Hsu, Hung-Yao; Lee, Sang-Heon; Ma, Jun; Yan, Cheng; Xu, Yanan; Azari, Sara; Yu, Sirong

2014-01-01

Piezoelectric composites comprising an active phase of ferroelectric ceramic and a polymer matrix have recently found numerous sensory applications. However, it remains a major challenge to further improve their electromechanical response for advanced applications such as precision control and monitoring systems. We here investigated the incorporation of graphene platelets (GnPs) and multi-walled carbon nanotubes (MWNTs), each with various weight fractions, into PZT (lead zirconate titanate)/epoxy composites to produce three-phase nanocomposites. The nanocomposite films show markedly improved piezoelectric coefficients and electromechanical responses (50%) besides an enhancement of ∼200% in stiffness. The carbon nanomaterials strengthened the impact of electric field on the PZT particles by appropriately raising the electrical conductivity of the epoxy. GnPs have been proved to be far more promising in improving the poling behavior and dynamic response than MWNTs. The superior dynamic sensitivity of GnP-reinforced composite may be caused by the GnPs’ high load transfer efficiency arising from their two-dimensional geometry and good compatibility with the matrix. The reduced acoustic impedance mismatch resulting from the improved thermal conductance may also contribute to the higher sensitivity of GnP-reinforced composite. This research pointed out the potential of employing GnPs to develop highly sensitive piezoelectric composites for sensing applications. (paper)

Hybrid CMOS/Molecular Integrated Circuits

Science.gov (United States)

Stan, M. R.; Rose, G. S.; Ziegler, M. M.

CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

Ceramic piezoelectric materials

International Nuclear Information System (INIS)

Kaszuwara, W.

2004-01-01

Ceramic piezoelectric materials conert reversibility electric energy into mechanical energy. In the presence of electric field piezoelectric materials exhibit deformations up to 0.15% (for single crystals up to 1.7%). The deformation energy is in the range of 10 2 - 10 3 J/m 3 and working frequency can reach 10 5 Hz. Ceramic piezoelectric materials find applications in many modern disciplines such as: automatics, micromanipulation, measuring techniques, medical diagnostics and many others. Among the variety of ceramic piezoelectric materials the most important appear to be ferroelectric materials such as lead zirconate titanate so called PZT ceramics. Ceramic piezoelectric materials can be processed by methods widely applied for standard ceramics, i.e. starting from simple precursors e.g. oxides. Application of sol-gel method has also been reported. Substantial drawback for many applications of piezoelectric ceramics is their brittleness, thus much effort is currently being put in the development of piezoelectric composite materials. Other important research directions in the field of ceramic piezoelectric materials composite development of lead free materials, which can exhibit properties similar to the PZT ceramics. Among other directions one has to state processing of single crystals and materials having texture or gradient structure. (author)

Load optimised piezoelectric generator for powering battery-less TPMS

Science.gov (United States)

Blažević, D.; Kamenar, E.; Zelenika, S.

2013-05-01

The design of a piezoelectric device aimed at harvesting the kinetic energy of random vibrations on a vehicle's wheel is presented. The harvester is optimised for powering a Tire Pressure Monitoring System (TPMS). On-road experiments are performed in order to measure the frequencies and amplitudes of wheels' vibrations. It is hence determined that the highest amplitudes occur in an unperiodic manner. Initial tests of the battery-less TPMS are performed in laboratory conditions where tuning and system set-up optimization is achieved. The energy obtained from the piezoelectric bimorph is managed by employing the control electronics which converts AC voltage to DC and conditions the output voltage to make it compatible with the load (i.e. sensor electronics and transmitter). The control electronics also manages the sleep/measure/transmit cycles so that the harvested energy is efficiently used. The system is finally tested in real on-road conditions successfully powering the pressure sensor and transmitting the data to a receiver in the car cockpit.

Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

Science.gov (United States)

Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

2014-03-01

We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

Planar pixel sensors in commercial CMOS technologies

Energy Technology Data Exchange (ETDEWEB)

Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn, Nussallee 12, 53115 Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany)

2015-07-01

For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

KAUST Repository

Nassar, Joanna M.

2017-02-07

We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

KAUST Repository

Nassar, Joanna M.; Sevilla, Galo T.; Velling, Seneca J.; Cordero, Marlon D.; Hussain, Muhammad Mustafa

2017-01-01

We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

CMOS MEMS Fabrication Technologies and Devices

Directory of Open Access Journals (Sweden)

Hongwei Qu

2016-01-01

Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

Piezoelectric cantilever sensors

Science.gov (United States)

Shih, Wan Y. (Inventor); Shih, Wei-Heng (Inventor); Shen, Zuyan (Inventor)

2008-01-01

A piezoelectric cantilever with a non-piezoelectric, or piezoelectric tip useful as mass and viscosity sensors. The change in the cantilever mass can be accurately quantified by monitoring a resonance frequency shift of the cantilever. For bio-detection, antibodies or other specific receptors of target antigens may be immobilized on the cantilever surface, preferably on the non-piezoelectric tip. For chemical detection, high surface-area selective absorbent materials are coated on the cantilever tip. Binding of the target antigens or analytes to the cantilever surface increases the cantilever mass. Detection of target antigens or analytes is achieved by monitoring the cantilever's resonance frequency and determining the resonance frequency shift that is due to the mass of the adsorbed target antigens on the cantilever surface. The use of a piezoelectric unimorph cantilever allows both electrical actuation and electrical sensing. Incorporating a non-piezoelectric tip (14) enhances the sensitivity of the sensor. In addition, the piezoelectric cantilever can withstand damping in highly viscous liquids and can be used as a viscosity sensor in wide viscosity range.

Piezoelectric Motors, an Overview

OpenAIRE

Karl Spanner; Burhanettin Koc

2016-01-01

Piezoelectric motors are used in many industrial and commercial applications. Various piezoelectric motors are available in the market. All of the piezoelectric motors use the inverse piezoelectric effect, where microscopically small oscillatory motions are converted into continuous or stepping rotary or linear motions. Methods of obtaining long moving distance have various drive and functional principles that make these motors categorized into three groups: resonance-drive (piezoelectric ult...

On the coupling effects of piezoelectricity and flexoelectricity in piezoelectric nanostructures

Directory of Open Access Journals (Sweden)

Liwen He

2017-10-01

Full Text Available Flexoelectricity is a novel kind of electromechanical coupling phenomenon that is prevalent in all solid dielectrics and usually of vital importance in nanostructures and soft materials. Although the fundamental theory of flexoelectric solids and related beam or plate theories were extensively studied in recent years, the coupling effect of flexoelectricity and piezoelectricity in piezoelectric nanostructures has not been completely clarified yet. In the present work, a geometrically nonlinear piezoelectric plate model is established with a focus on the coupling effect. The constitutive equations for piezoelectric plates are derived under both the electrically short-circuit and open-circuit conditions. It is found that due to the coupling between flexoelectricity and piezoelectricity, stretching-bending coupling stiffness arises in the homogeneous plate and its specific value relies on the applied electrical boundary conditions. The effects of the flexoelectric-piezoelectric coupling on the effective mechanical behavior and the electromechanical behavior of nanobeams and nanoplates are also discussed. The developed model and presented results are expected to benefit the design and analysis of piezoelectric and flexoelectric devices and systems.

Piezoelectric Motors, an Overview

Directory of Open Access Journals (Sweden)

Karl Spanner

2016-02-01

Full Text Available Piezoelectric motors are used in many industrial and commercial applications. Various piezoelectric motors are available in the market. All of the piezoelectric motors use the inverse piezoelectric effect, where microscopically small oscillatory motions are converted into continuous or stepping rotary or linear motions. Methods of obtaining long moving distance have various drive and functional principles that make these motors categorized into three groups: resonance-drive (piezoelectric ultrasonic motors, inertia-drive, and piezo-walk-drive. In this review, a comprehensive summary of piezoelectric motors, with their classification from initial idea to recent progress, is presented. This review also includes some of the industrial and commercial applications of piezoelectric motors that are presently available in the market as actuators.

Size-dependent effective properties of anisotropic piezoelectric composites with piezoelectric nano-particles

International Nuclear Information System (INIS)

Huang, Ming-Juan; Fang, Xue-Qian; Liu, Jin-Xi; Feng, Wen-Jie; Zhao, Yong-Mao

2015-01-01

Based on the electro-elastic surface/interface theory, the size-dependent effective piezoelectric and dielectric coefficients of anisotropic piezoelectric composites that consist of spherically piezoelectric inclusions under a uniform electric field are investigated, and the analytical solutions for the elastic displacement and electric potentials are derived. With consideration of the coupling effects of elasticity, permittivity and piezoelectricity, the effective field method is introduced to derive the effective dielectric and piezoelectric responses in the dilute limit. The numerical examples show that the effective dielectric constant exhibits a significant variation due to the surface/interface effect. The dielectric property of the surface/interface displays greater effect than the piezoelectric property, and the elastic property shows little effect. A comparison with the existing results validates the present approach. (paper)

A piezoelectric transformer

Science.gov (United States)

Won, C. C.

1993-01-01

This work describes a modeling and design method whereby a piezoelectric system is formulated by two sets of second-order equations, one for the mechanical system, and the other for the electrical system, coupled through the piezoelectric effect. The solution to this electromechanical coupled system gives a physical interpretation of the piezoelectric effect as a piezoelectric transformer that is a part of the piezoelectric system, which transfers the applied mechanical force into a force-controlled current source, and short circuit mechanical compliance into capacitance. It also transfers the voltage source into a voltage-controlled relative velocity input, and free motional capacitance into mechanical compliance. The formulation and interpretation simplify the modeling of smart structures and lead to physical insight that aids the designer. Due to its physical realization, the smart structural system can be unconditional stable and effectively control responses. This new concept has been demonstrated in three numerical examples for a simple piezoelectric system.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Directory of Open Access Journals (Sweden)

Sandro Rao

2016-01-01

Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Engineered piezoelectricity in graphene.

Science.gov (United States)

Ong, Mitchell T; Reed, Evan J

2012-02-28

We discover that piezoelectric effects can be engineered into nonpiezoelectric graphene through the selective surface adsorption of atoms. Our calculations show that doping a single sheet of graphene with atoms on one side results in the generation of piezoelectricity by breaking inversion symmetry. Despite their 2D nature, piezoelectric magnitudes are found to be comparable to those in 3D piezoelectric materials. Our results elucidate a designer piezoelectric phenomenon, unique to the nanoscale, that has potential to bring dynamical control to nanoscale electromechanical devices.

Microelectronic test structures for CMOS technology

CERN Document Server

Ketchen, Mark B

2011-01-01

Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

CERN Document Server

Wang, T.

2017-01-01

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

A CMOS Luminescence Intensity and Lifetime Dual Sensor Based on Multicycle Charge Modulation.

Science.gov (United States)

Fu, Guoqing; Sonkusale, Sameer R

2018-06-01

Luminescence plays an important role in many scientific and industrial applications. This paper proposes a novel complementary metal-oxide-semiconductor (CMOS) sensor chip that can realize both luminescence intensity and lifetime sensing. To enable high sensitivity, we propose parasitic insensitive multicycle charge modulation scheme for low-light lifetime extraction benefiting from simplicity, accuracy, and compatibility with deeply scaled CMOS process. The designed in-pixel capacitive transimpedance amplifier (CTIA) based structure is able to capture the weak luminescence-induced voltage signal by accumulating photon-generated charges in 25 discrete gated 10-ms time windows and 10-μs pulsewidth. A pinned photodiode on chip with 1.04 pA dark current is utilized for luminescence detection. The proposed CTIA-based circuitry can achieve 2.1-mV/(nW/cm 2 ) responsivity and 4.38-nW/cm 2 resolution at 630 nm wavelength for intensity measurement and 45-ns resolution for lifetime measurement. The sensor chip is employed for measuring time constants and luminescence lifetimes of an InGaN-based white light-emitting diode at different wavelengths. In addition, we demonstrate accurate measurement of the lifetime of an oxygen sensitive chromophore with sensitivity to oxygen concentration of 7.5%/ppm and 6%/ppm in both intensity and lifetime domain. This CMOS-enabled oxygen sensor was then employed to test water quality from different sources (tap water, lakes, and rivers).

Ultrasonic Fingerprint Sensor With Transmit Beamforming Based on a PMUT Array Bonded to CMOS Circuitry.

Science.gov (United States)

Jiang, Xiaoyue; Tang, Hao-Yen; Lu, Yipeng; Ng, Eldwin J; Tsai, Julius M; Boser, Bernhard E; Horsley, David A

2017-09-01

In this paper, we present a single-chip 65 ×42 element ultrasonic pulse-echo fingerprint sensor with transmit (TX) beamforming based on piezoelectric micromachined ultrasonic transducers directly bonded to a CMOS readout application-specific integrated circuit (ASIC). The readout ASIC was realized in a standard 180-nm CMOS process with a 24-V high-voltage transistor option. Pulse-echo measurements are performed column-by-column in sequence using either one column or five columns to TX the ultrasonic pulse at 20 MHz. TX beamforming is used to focus the ultrasonic beam at the imaging plane where the finger is located, increasing the ultrasonic pressure and narrowing the 3-dB beamwidth to [Formula: see text], a factor of 6.4 narrower than nonbeamformed measurements. The surface of the sensor is coated with a poly-dimethylsiloxane (PDMS) layer to provide good acoustic impedance matching to skin. Scanning laser Doppler vibrometry of the PDMS surface was used to map the ultrasonic pressure field at the imaging surface, demonstrating the expected increase in pressure, and reduction in beamwidth. Imaging experiments were conducted using both PDMS phantoms and real fingerprints. The average image contrast is increased by a factor of 1.5 when beamforming is used.

Applications of Piezoelectric Ceramics

Indian Academy of Sciences (India)

Applications of Piezoelectric Ceramics. Piezoelectric Actuators. Nano and Micropositioners. Vibration Control Systems. Computer Printers. Piezoelectric Transformers,Voltage Generators, Spark Plugs, Ultrasonic Motors,. Ultrasonic Generators and Sensors. Sonars, Medical Diagnostic. Computer Memories. NVFRAM ...

A Shoe-Embedded Piezoelectric Energy Harvester for Wearable Sensors

Directory of Open Access Journals (Sweden)

Jingjing Zhao

2014-07-01

Full Text Available Harvesting mechanical energy from human motion is an attractive approach for obtaining clean and sustainable electric energy to power wearable sensors, which are widely used for health monitoring, activity recognition, gait analysis and so on. This paper studies a piezoelectric energy harvester for the parasitic mechanical energy in shoes originated from human motion. The harvester is based on a specially designed sandwich structure with a thin thickness, which makes it readily compatible with a shoe. Besides, consideration is given to both high performance and excellent durability. The harvester provides an average output power of 1 mW during a walk at a frequency of roughly 1 Hz. Furthermore, a direct current (DC power supply is built through integrating the harvester with a power management circuit. The DC power supply is tested by driving a simulated wireless transmitter, which can be activated once every 2–3 steps with an active period lasting 5 ms and a mean power of 50 mW. This work demonstrates the feasibility of applying piezoelectric energy harvesters to power wearable sensors.

Development of Novel Piezoelectric Biosensor Using PZT Ceramic Resonator for Detection of Cancer Markers.

Science.gov (United States)

Su, Li; Fong, Chi-Chun; Cheung, Pik-Yuan; Yang, Mengsu

2017-01-01

A novel biosensor based on piezoelectric ceramic resonator was developed for direct detection of cancer markers in the study. For the first time, a commercially available PZT ceramic resonator with high resonance frequency was utilized as transducer for a piezoelectric biosensor. A dual ceramic resonators scheme was designed wherein two ceramic resonators were connected in parallel: one resonator was used as the sensing unit and the other as the control unit. This arrangement minimizes environmental influences including temperature fluctuation, while achieving the required frequency stability for biosensing applications. The detection of the cancer markers Prostate Specific Antigen (PSA) and α-Fetoprotein (AFP) was carried out through frequency change measurement. The device showed high sensitivity (0.25 ng/ml) and fast detection (within 30 min) with small samples (1 μl), which is compatible with the requirements of clinical measurements. The results also showed that the ceramic resonator-based piezoelectric biosensor platform could be utilized with different chemical interfaces, and had the potential to be further developed into biosensor arrays with different specificities for simultaneous detection of multiple analytes.

Theoretical and experimental research on the influence of multiple piezoelectric effects on physical parameters of piezoelectric actuator

Directory of Open Access Journals (Sweden)

Liping Shi

2015-04-01

Full Text Available Compared with the traditional actuator of machinery and electricity, the piezoelectric actuator has the advantages of a compact structure, small volume, no mechanical friction, athermancy and no electromagnetic interference. Therefore, it has high application value in the fields of MEMS, bioengineering, medical science and so on. This article draws conclusions from the influence of multiple piezoelectric effects on the physical parameters (dielectric coefficient, equivalent capacity, energy conversion and piezoelectric coefficient of piezoelectric actuators. These data from theoretical and experimental research show the following: (1 The rate between the dielectric coefficient of piezoelectric in mechanical freedom and clamping is obtained from the secondary direct piezoelectric effect, which enhances the dielectric property, increases the dielectric coefficient and decreases the coefficient of dielectric isolation; (2 Under external field, E n ( ex = E 1 , exterior stress T = 0, that is to say, under the boundary condition of mechanical freedom, piezoelectric can store electric energy and elasticity, which obtains power density, elastic density and an electromechanical coupling factor; (3 According to the piezoelectric strain S i ( 1 , piezoelectric displacement D m ( 2 and piezoelectric strain S i ( 3 of multiple piezoelectric effects, when the dielectric coefficient of the first converse piezoelectric effect ε33 is 1326 and the dielectric coefficient of the secondary direct piezoelectric effect increases to 3336, the dielectric coefficient of the ceramic chip increases. When the piezoelectric coefficient of the first converse piezoelectric effect d33 is 595 and the piezoelectric coefficient of the secondary direct piezoelectric effect decreases to 240, the piezoelectric coefficient of the ceramic chip will decrease. It is of major significance both in the applications and in basic theory to research the influence of multiple piezoelectric

Piezoelectric drive circuit

Science.gov (United States)

Treu, C.A. Jr.

1999-08-31

A piezoelectric motor drive circuit is provided which utilizes the piezoelectric elements as oscillators and a Meacham half-bridge approach to develop feedback from the motor ground circuit to produce a signal to drive amplifiers to power the motor. The circuit automatically compensates for shifts in harmonic frequency of the piezoelectric elements due to pressure and temperature changes. 7 figs.

Three-dimensional micro electromechanical system piezoelectric ultrasound transducer

Science.gov (United States)

Hajati, Arman; Latev, Dimitre; Gardner, Deane; Hajati, Azadeh; Imai, Darren; Torrey, Marc; Schoeppler, Martin

2012-12-01

Here we present the design and experimental acoustic test data for an ultrasound transducer technology based on a combination of micromachined dome-shaped piezoelectric resonators arranged in a flexible architecture. Our high performance niobium-doped lead zirconate titanate film is implemented in three-dimensional dome-shaped structures, which form the basic resonating cells. Adjustable frequency response is realized by mixing these basic cells and modifying their dimensions by lithography. Improved characteristics such as high sensitivity, adjustable wide-bandwidth frequency response, low transmit voltage compatible with ordinary integrated circuitry, low electrical impedance well matched to coaxial cabling, and intrinsic acoustic impedance match to water are demonstrated.

Large area CMOS image sensors

International Nuclear Information System (INIS)

Turchetta, R; Guerrini, N; Sedgwick, I

2011-01-01

CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

A Concentric Tube Continuum Robot with Piezoelectric Actuation for MRI-Guided Closed-Loop Targeting

OpenAIRE

Su, Hao; Li, Gang; Rucker, D. Caleb; Webster, Robert J.; Fischer, Gregory S.

2016-01-01

This paper presents the design, modeling and experimental evaluation of a magnetic resonance imaging (MRI)-compatible concentric tube continuum robotic system. This system enables MRI-guided deployment of a precurved and steerable concentric tube continuum mechanism, and is suitable for clinical applications where a curved trajectory is needed. This compact 6 degree-of-freedom (DOF) robotic system is piezoelectrically-actuated, and allows simultaneous robot motion and imaging with no visually...

The development of all-polymer-based piezoelectrically active photocurable resin for 3D printing process (Conference Presentation)

Science.gov (United States)

Baker, Evan; Chu, Weishen; Ware, Henry Oliver T.; Farsheed, Adam C.; Sun, Cheng

2017-02-01

We present in this work the development and experimental validation of a new piezoelectric material (V-Ink) designed for compatibility with projection stereolithography additive manufacturing techniques. Piezoelectric materials generate a voltage output when a stress is applied to the material, and also can be actuated by using an external voltage and power source. This new material opens up new opportunities for functional devices to be developed and rapidly produced at low cost using emerging 3D printing techniques. The new piezoelectric material was able to generate 115mV under 1N of strain after being polled at 80°C for 40 minutes and the optimal results had a piezoelectric coefficient of 105x10^(-3)V.m/N. The current iteration of the material is a suspension, although further work is ongoing to make the resin a true solution. The nature of the suspension was characterized by a time-lapse monitoring and through viscosity testing. The potential exists to further increase the piezoelectric properties of this material by integrating a mechanical to electrical enhancer such as carbon nanotubes or barium titanate into the material. Such materials need to be functionalized to be integrated within the material, which is currently being explored. Printing with this material on a "continuous SLA" printer that we have developed will reduce build times by an order of magnitude to allow for mass manufacturing. Pairing those two advancements will enable faster printing and enhanced piezoelectric properties.

Research on the parallel load sharing principle of a novel self-decoupled piezoelectric six-dimensional force sensor.

Science.gov (United States)

Li, Ying-Jun; Yang, Cong; Wang, Gui-Cong; Zhang, Hui; Cui, Huan-Yong; Zhang, Yong-Liang

2017-09-01

This paper presents a novel integrated piezoelectric six-dimensional force sensor which can realize dynamic measurement of multi-dimensional space load. Firstly, the composition of the sensor, the spatial layout of force-sensitive components, and measurement principle are analyzed and designed. There is no interference of piezoelectric six-dimensional force sensor in theoretical analysis. Based on the principle of actual work and deformation compatibility coherence, this paper deduces the parallel load sharing principle of the piezoelectric six-dimensional force sensor. The main effect factors which affect the load sharing ratio are obtained. The finite element model of the piezoelectric six-dimensional force sensor is established. In order to verify the load sharing principle of the sensor, a load sharing test device of piezoelectric force sensor is designed and fabricated. The load sharing experimental platform is set up. The experimental results are in accordance with the theoretical analysis and simulation results. The experiments show that the multi-dimensional and heavy force measurement can be realized by the parallel arrangement of the load sharing ring and the force sensitive element in the novel integrated piezoelectric six-dimensional force sensor. The ideal load sharing effect of the sensor can be achieved by appropriate size parameters. This paper has an important guide for the design of the force measuring device according to the load sharing mode. Copyright © 2017 ISA. Published by Elsevier Ltd. All rights reserved.

CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties

Directory of Open Access Journals (Sweden)

Pei-Zen Chang

2012-12-01

Full Text Available This paper develops the technologies of mechanical characterization of CMOS-MEMS devices, and presents a robust algorithm for extracting mechanical properties, such as Young’s modulus, and mean stress, through the external electrical circuit behavior of the micro test-key. An approximate analytical solution for the pull-in voltage of bridge-type test-key subjected to electrostatic load and initial stress is derived based on Euler’s beam model and the minimum energy method. Then one can use the aforesaid closed form solution of the pull-in voltage to extract the Young’s modulus and mean stress of the test structures. The test cases include the test-key fabricated by a TSMC 0.18 μm standard CMOS process, and the experimental results refer to Osterberg’s work on the pull-in voltage of single crystal silicone microbridges. The extracted material properties calculated by the present algorithm are valid. Besides, this paper also analyzes the robustness of this algorithm regarding the dimension effects of test-keys. This mechanical properties extracting method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test process is non-destructive.

Optoelectronic circuits in nanometer CMOS technology

CERN Document Server

Atef, Mohamed

2016-01-01

This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

High-Temperature Piezoelectric Sensing

Directory of Open Access Journals (Sweden)

Xiaoning Jiang

2013-12-01

Full Text Available Piezoelectric sensing is of increasing interest for high-temperature applications in aerospace, automotive, power plants and material processing due to its low cost, compact sensor size and simple signal conditioning, in comparison with other high-temperature sensing techniques. This paper presented an overview of high-temperature piezoelectric sensing techniques. Firstly, different types of high-temperature piezoelectric single crystals, electrode materials, and their pros and cons are discussed. Secondly, recent work on high-temperature piezoelectric sensors including accelerometer, surface acoustic wave sensor, ultrasound transducer, acoustic emission sensor, gas sensor, and pressure sensor for temperatures up to 1,250 °C were reviewed. Finally, discussions of existing challenges and future work for high-temperature piezoelectric sensing are presented.

CMOS test and evaluation a physical perspective

CERN Document Server

Bhushan, Manjul

2015-01-01

This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

Absorbed dose by a CMOS in radiotherapy

International Nuclear Information System (INIS)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

2011-10-01

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection.

Science.gov (United States)

Nasri, Bayan; Wu, Ting; Alharbi, Abdullah; You, Kae-Dyi; Gupta, Mayank; Sebastian, Sunit P; Kiani, Roozbeh; Shahrjerdi, Davood

2017-12-01

We introduce a hybrid CMOS-graphene sensor array for subsecond measurement of dopamine via fast-scan cyclic voltammetry (FSCV). The prototype chip has four independent CMOS readout channels, fabricated in a 65-nm process. Using planar multilayer graphene as biologically compatible sensing material enables integration of miniaturized sensing electrodes directly above the readout channels. Taking advantage of the chemical specificity of FSCV, we introduce a region of interest technique, which subtracts a large portion of the background current using a programmable low-noise constant current at about the redox potentials. We demonstrate the utility of this feature for enhancing the sensitivity by measuring the sensor response to a known dopamine concentration in vitro at three different scan rates. This strategy further allows us to significantly reduce the dynamic range requirements of the analog-to-digital converter (ADC) without compromising the measurement accuracy. We show that an integrating dual-slope ADC is adequate for digitizing the background-subtracted current. The ADC operates at a sampling frequency of 5-10 kHz and has an effective resolution of about 60 pA, which corresponds to a theoretical dopamine detection limit of about 6 nM. Our hybrid sensing platform offers an effective solution for implementing next-generation FSCV devices that can enable precise recording of dopamine signaling in vivo on a large scale.

Design, fabrication, and properties of 2-2 connectivity cement/polymer based piezoelectric composites with varied piezoelectric phase distribution

International Nuclear Information System (INIS)

Dongyu, Xu; Xin, Cheng; Shifeng, Huang; Banerjee, Sourav

2014-01-01

The laminated 2-2 connectivity cement/polymer based piezoelectric composites with varied piezoelectric phase distribution were fabricated by employing Lead Zirconium Titanate ceramic as active phase, and mixture of cement powder, epoxy resin, and hardener as matrix phase with a mass proportion of 4:4:1. The dielectric, piezoelectric, and electromechanical coupling properties of the composites were studied. The composites with large total volume fraction of piezoelectric phase have large piezoelectric strain constant and relative permittivity, and the piezoelectric and dielectric properties of the composites are independent of the dimensional variations of the piezoelectric ceramic layer. The composites with small total volume fraction of piezoelectric phase have large piezoelectric voltage constant, but also large dielectric loss. The composite with gradually increased dimension of piezoelectric ceramic layer has the smallest dielectric loss, and that with the gradually increased dimension of matrix layer has the largest piezoelectric voltage constant. The novel piezoelectric composites show potential applications in fabricating ultrasonic transducers with varied surface vibration amplitude of the transducer

Neutron absorbed dose in a pacemaker CMOS

International Nuclear Information System (INIS)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

2012-01-01

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2012-06-15

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

Low-loss CMOS copper plasmonic waveguides at the nanoscale (Conference Presentation)

Science.gov (United States)

Fedyanin, Dmitry Y.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.; Volkov, Valentyn S.

2016-05-01

Implementation of optical components in microprocessors can increase their performance by orders of magnitude. However, the size of optical elements is fundamentally limited by diffraction, while miniaturization is one of the essential concepts in the development of high-speed and energy-efficient electronic chips. Surface plasmon polaritons (SPPs) are widely considered to be promising candidates for the next generation of chip-scale technology thanks to the ability to break down the fundamental diffraction limit and manipulate optical signals at the truly nometer scale. In the past years, a variety of deep-subwavelength plasmonic structures have been proposed and investigated, including dielectric-loaded SPP waveguides, V-groove waveguides, hybrid plasmonic waveguides and metal nanowires. At the same time, for practical application, such waveguide structures must be integrated on a silicon chip and be fabricated using CMOS fabrication process. However, to date, acceptable characteristics have been demonstrated only with noble metals (gold and silver), which are not compatible with industry-standard manufacturing technologies. On the other hand, alternative materials introduce enormous propagation losses due absorption in the metal. This prevents plasmonic components from implementation in on-chip nanophotonic circuits. In this work, we experimentally demonstrate for the first time that copper plasmonic waveguides fabricated in a CMOS compatible process can outperform gold waveguides showing the same level of mode confinement and lower propagation losses. At telecommunication wavelengths, the fabricated ultralow-loss deep-subwavelength hybrid plasmonic waveguides ensure a relatively long propagation length of more than 50 um along with strong mode confinement with the mode size down to lambda^2/70, which is confirmed by direct scanning near-field optical microscopy (SNOM) measurements. These results create the backbone for design and development of high

Absorbed dose by a CMOS in radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-10-15

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Wideband CMOS receivers

CERN Document Server

Oliveira, Luis

2015-01-01

This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

A theory of piezoelectric laminates

International Nuclear Information System (INIS)

Giangreco, E.

1997-01-01

A theory of piezoelectric laminates is rationally derived from the three-dimensional Voigt theory of piezoelectricity. The present theory is a generalization to piezoelectric laminates of the Reissner-Mindlin-type layer-wise theory of elastic laminates. Both a differential formulation and a variational formulation of the piezoelectric laminate problem are presented. The proposed theory is adopted in the analysis of simple problems, in order to verify its effectiveness. The results it provides turn out to be in good agreement with the results supplied by the Voigt theory of piezoelectricity

Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

KAUST Repository

Aktakka, Ethem Erkan

2013-10-01

This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.

Wave propagation through a flexoelectric piezoelectric slab sandwiched by two piezoelectric half-spaces.

Science.gov (United States)

Jiao, Fengyu; Wei, Peijun; Li, Yueqiu

2018-01-01

Reflection and transmission of plane waves through a flexoelectric piezoelectric slab sandwiched by two piezoelectric half-spaces are studied in this paper. The secular equations in the flexoelectric piezoelectric material are first derived from the general governing equation. Different from the classical piezoelectric medium, there are five kinds of coupled elastic waves in the piezoelectric material with the microstructure effects taken into consideration. The state vectors are obtained by the summation of contributions from all possible partial waves. The state transfer equation of flexoelectric piezoelectric slab is derived from the motion equation by the reduction of order, and the transfer matrix of flexoelectric piezoelectric slab is obtained by solving the state transfer equation. By using the continuous conditions at the interface and the approach of partition matrix, we get the resultant algebraic equations in term of the transfer matrix from which the reflection and transmission coefficients can be calculated. The amplitude ratios and further the energy flux ratios of various waves are evaluated numerically. The numerical results are shown graphically and are validated by the energy conservation law. Based on these numerical results, the influences of two characteristic lengths of microstructure and the flexoelectric coefficients on the wave propagation are discussed. Copyright © 2017 Elsevier B.V. All rights reserved.

Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

CERN Document Server

El-Khatib, Ziad; Mahmoud, Samy A

2012-01-01

This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

IVVS actuating system compatibility test to ITER gamma radiation conditions

Energy Technology Data Exchange (ETDEWEB)

Rossi, Paolo, E-mail: paolo.rossi@enea.it [Associazione EURATOM-ENEA sulla Fusione, 45 Via Enrico Fermi, 00044 Frascati, Rome (Italy); Collibus, M. Ferri de; Florean, M.; Monti, C.; Mugnaini, G.; Neri, C.; Pillon, M.; Pollastrone, F. [Associazione EURATOM-ENEA sulla Fusione, 45 Via Enrico Fermi, 00044 Frascati, Rome (Italy); Baccaro, S.; Piegari, A. [ENEA CR Casaccia, 301 Via Anguillarese, 00123 Santa Maria di Galeria, Rome (Italy); Damiani, C.; Dubus, G. [Fusion For Energy c/Josep Pla, n° 2 Torres Diagonal Litoral, 08019 Barcelona (Spain)

2013-10-15

Highlights: • ENEA developed and tested a prototype of a laser In Vessel Viewing and ranging System (IVVS) for ITER. • One piezo-motor prototype has been tested on the ENEA Calliope gamma irradiation facility to verify its compatibility to ITER gamma radiation conditions. • After a total dose of more than 4 MGy the piezo-motor maintained almost the same working parameters monitored before test without any evident and significant degradation of functionality. • After the full gamma irradiation test, the same piezo-motor assembly will be tested with 14 MeV neutrons irradiation using ENEA FNG facility. -- Abstract: The In Vessel Viewing System (IVVS) is a fundamental remote handling equipment, which will be used to make a survey of the status of the blanket first wall and divertor plasma facing components. A design and testing activity is ongoing, in the framework of a Fusion for Energy (F4E) grant agreement, to make the IVVS probe design compatible with ITER operating conditions and in particular, but not only, with attention to neutrons and gammas fluxes and both space constraints and interfaces. The paper describes the testing activity performed on the customized piezoelectric motors and the main components of the actuating system of the IVVS probe with reference to ITER gamma radiation conditions. In particular the test is performed on the piezoelectric motor, optical encoder and small scale optical samples .The test is carried out on the ENEA Calliope gamma irradiation facility at ITER relevant gamma fields at rate of about 2.5 kGy/h and doses of 4 MGy. The paper reports in detail the setup arrangement of the test campaign in order to verify significant working capability of the IVVS actuating components and the results are shown in terms of functional performances and parameters. The overall test campaign on IVVS actuating system will be completed on other ENEA testing facilities in order to verify compatibility to Magnetic field, neutrons and thermal

IVVS actuating system compatibility test to ITER gamma radiation conditions

International Nuclear Information System (INIS)

Rossi, Paolo; Collibus, M. Ferri de; Florean, M.; Monti, C.; Mugnaini, G.; Neri, C.; Pillon, M.; Pollastrone, F.; Baccaro, S.; Piegari, A.; Damiani, C.; Dubus, G.

2013-01-01

Highlights: • ENEA developed and tested a prototype of a laser In Vessel Viewing and ranging System (IVVS) for ITER. • One piezo-motor prototype has been tested on the ENEA Calliope gamma irradiation facility to verify its compatibility to ITER gamma radiation conditions. • After a total dose of more than 4 MGy the piezo-motor maintained almost the same working parameters monitored before test without any evident and significant degradation of functionality. • After the full gamma irradiation test, the same piezo-motor assembly will be tested with 14 MeV neutrons irradiation using ENEA FNG facility. -- Abstract: The In Vessel Viewing System (IVVS) is a fundamental remote handling equipment, which will be used to make a survey of the status of the blanket first wall and divertor plasma facing components. A design and testing activity is ongoing, in the framework of a Fusion for Energy (F4E) grant agreement, to make the IVVS probe design compatible with ITER operating conditions and in particular, but not only, with attention to neutrons and gammas fluxes and both space constraints and interfaces. The paper describes the testing activity performed on the customized piezoelectric motors and the main components of the actuating system of the IVVS probe with reference to ITER gamma radiation conditions. In particular the test is performed on the piezoelectric motor, optical encoder and small scale optical samples .The test is carried out on the ENEA Calliope gamma irradiation facility at ITER relevant gamma fields at rate of about 2.5 kGy/h and doses of 4 MGy. The paper reports in detail the setup arrangement of the test campaign in order to verify significant working capability of the IVVS actuating components and the results are shown in terms of functional performances and parameters. The overall test campaign on IVVS actuating system will be completed on other ENEA testing facilities in order to verify compatibility to Magnetic field, neutrons and thermal

An MRI-compatible hand sensory vibrotactile system

International Nuclear Information System (INIS)

Wang, Fa; Lakshminarayanan, Kishor; Slota, Gregory P; Seo, Na Jin; Webster, John G

2015-01-01

Recently, the application of vibrotactile noise to the wrist or back of the hand has been shown to enhance fingertip tactile sensory perception (Enders et al 2013), supporting the potential for an assistive device worn at the wrist, that generates minute vibrations to help the elderly or patients with sensory deficit. However, knowledge regarding the detailed physiological mechanism behind this sensory improvement in the central nervous system, especially in the human brain, is limited, hindering progress in development and use of such assistive devices. To enable investigation of the impact of vibrotactile noise on sensorimotor brain activity in humans, a magnetic resonance imaging (MRI)-compatible vibrotactile system was developed to provide vibrotactile noise during an MRI of the brain. The vibrotactile system utilizes a remote (outside the MR room) signal amplifier which provides a voltage from –40 to +40 V to drive a 12 mm diameter piezoelectric vibrator (inside the MR room). It is portable and is found to be MRI-compatible which enables its use for neurologic investigation with MRI. The system was also found to induce an improvement in fingertip tactile sensation, consistent with the previous study. (note)

Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

Science.gov (United States)

Cernansky, Robert; Martini, Francesco; Politi, Alberto

2018-02-01

We demonstrate on chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible PECVD Silicon Nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high quality Q-factor of 320,000 resulting in a generation rate of 950,000 $\\frac{pairs}{mW}$. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.

Experimental measurement of a high resolution CMOS detector coupled to CsI scintillators under X-ray radiation

International Nuclear Information System (INIS)

Michail, C.; Valais, I.; Seferis, I.; Kalyvas, N.; Fountos, G.; Kandarakis, I.

2015-01-01

The purpose of the present study was to assess the information content of structured CsI:Tl scintillating screens, specially treated to be compatible to a CMOS digital imaging optical sensor, in terms of the information capacity (IC), based on Shannon's mathematical communication theory. IC was assessed after the experimental determination of the Modulation Transfer Function (MTF) and the Normalized Noise Power Spectrum (NNPS) in the mammography and general radiography energy range. The CMOS sensor was coupled to three columnar CsI:Tl scintillator screens obtained from the same manufacturer with thicknesses of 130, 140 and 170 μm respectively, which were placed in direct contact with the optical sensor. The MTF was measured using the slanted-edge method while NNPS was determined by 2D Fourier transforming of uniformly exposed images. Both parameters were assessed by irradiation under the mammographic W/Rh (130, 140 and 170 μm CsI screens) and the RQA-5 (140 and 170 μm CsI screens) (IEC 62220-1) beam qualities. The detector response function was linear for the exposure range under investigation. At 70 kVp, under the RQA-5 conditions IC values were found to range between 2229 and 2340 bits/mm 2 . At 28 kVp the corresponding IC values were found to range between 2262 and 2968 bits/mm 2 . The information content of CsI:Tl scintillating screens in combination to the high resolution CMOS sensor, investigated in the present study, where found optimized for use in digital mammography imaging systems. - Highlights: • Three structured CsI:Tl screens (130,140 & 170 um) were coupled to a CMOS sensor. • MTF of the CsI/CMOS was higher than GOS:Tb and CsI based digital imaging systems. • IC of CsI:Tl/CMOS was found optimized for use in digital mammography systems

Notes on Piezoelectricity

Energy Technology Data Exchange (ETDEWEB)

Redondo, Antonio [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2016-02-03

These notes provide a pedagogical discussion of the physics of piezoelectricity. The exposition starts with a brief analysis of the classical (continuum) theory of piezoelectric phenomena in solids. The main subject of the notes is, however, a quantum mechanical analysis. We first derive the Frohlich Hamiltonian as part of the description of the electron-phonon interaction. The results of this analysis are then employed to derive the equations of piezoelectricity. A couple of examples with the zinc blende and and wurtzite structures are presented at the end

Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies

KAUST Repository

Hussain, Aftab M.

2016-12-01

With the advancement of silicon electronics under threat from physical limits to dimensional scaling, the International Technology Roadmap for Semiconductors (ITRS) released a white paper in 2008, detailing the ways in which the semiconductor industry can keep itself continually growing in the twenty-first century. Two distinct paths were proposed: More-Moore and More-than-Moore. While More-Moore approach focuses on the continued use of state-of-the-art, complementary metal oxide semiconductor (CMOS) technology for next generation electronics, More-than-Moore approach calls for a disruptive change in the system architecture and integration strategies. In this doctoral thesis, we investigate both the approaches to obtain performance improvement in the state-of-the-art, CMOS electronics. We present a novel channel material, SiSn, for fabrication of CMOS circuits. This investigation is in line with the More-Moore approach because we are relying on the established CMOS industry infrastructure to obtain an incremental change in the integrated circuit (IC) performance by replacing silicon channel with SiSn. We report a simple, low-cost and CMOS compatible process for obtaining single crystal SiSn wafers. Tin (Sn) is deposited on silicon wafers in the form of a metallic thin film and annealed to facilitate diffusion into the silicon lattice. This diffusion provides for sufficient SiSn layer at the top surface for fabrication of CMOS devices. We report a lowering of band gap and enhanced mobility for SiSn channel MOSFETs compared to silicon control devices. We also present a process for fabrication of vertically integrated flexible silicon to form 3D integrated circuits. This disruptive change in the state-of-the-art, in line with the More-than-Moore approach, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We

Materials and processing approaches for foundry-compatible transient electronics

Science.gov (United States)

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-07-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

A CMOS Morlet Wavelet Generator

Directory of Open Access Journals (Sweden)

A. I. Bautista-Castillo

2017-04-01

Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

CMOS image sensors: State-of-the-art

Science.gov (United States)

Theuwissen, Albert J. P.

2008-09-01

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

All-CMOS night vision viewer with integrated microdisplay

Science.gov (United States)

Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

2014-02-01

The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

Science.gov (United States)

Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

2018-04-01

We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

Stretchable piezoelectric nanocomposite generator.

Science.gov (United States)

Park, Kwi-Il; Jeong, Chang Kyu; Kim, Na Kyung; Lee, Keon Jae

2016-01-01

Piezoelectric energy conversion that generate electric energy from ambient mechanical and vibrational movements is promising energy harvesting technology because it can use more accessible energy resources than other renewable natural energy. In particular, flexible and stretchable piezoelectric energy harvesters which can harvest the tiny biomechanical motions inside human body into electricity properly facilitate not only the self-powered energy system for flexible and wearable electronics but also sensitive piezoelectric sensors for motion detectors and in vivo diagnosis kits. Since the piezoelectric ZnO nanowires (NWs)-based energy harvesters (nanogenerators) were proposed in 2006, many researchers have attempted the nanogenerator by using the various fabrication process such as nanowire growth, electrospinning, and transfer techniques with piezoelectric materials including polyvinylidene fluoride (PVDF) polymer and perovskite ceramics. In 2012, the composite-based nanogenerators were developed using simple, low-cost, and scalable methods to overcome the significant issues with previously-reported energy harvester, such as insufficient output performance and size limitation. This review paper provides a brief overview of flexible and stretchable piezoelectric nanocomposite generator for realizing the self-powered energy system with development history, power performance, and applications.

Induced piezoelectricity in isotropic biomaterial.

Science.gov (United States)

Zimmerman, R L

1976-01-01

Isotropic material can be made to exhibit piezoelectric effects by the application of a constant electric field. For insulators, the piezoelectric strain constant is proportional to the applied electric field and for semiconductors, an additional out-of-phase component of piezoelectricity is proportional to the electric current density in the sample. The two induced coefficients are proportional to the strain-dependent dielectric constant (depsilon/dS + epsilon) and resistivity (drho/dS - rho), respectively. The latter is more important at frequencies such that rhoepsilonomega less than 1, often the case in biopolymers.Signals from induced piezoelectricity in nature may be larger than those from true piezoelectricity. PMID:990389

Beyond CMOS nanodevices 1

CERN Document Server

Balestra, Francis

2014-01-01

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

Beyond CMOS nanodevices 2

CERN Document Server

Balestra, Francis

2014-01-01

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Piezoelectric effect in strained quantum wells

International Nuclear Information System (INIS)

Dang, L.S.; Andre, R.; Cibert, J.

1995-01-01

This paper describes some physical aspects of the piezoelectric effect which takes place in strained semiconductor heterostructures grown along a polar axis. First we show how piezoelectric fields can be accurately measured by optical spectroscopy. Then we discuss about the origin of the non-linear piezoelectric effect reported recently for CdTe, and maybe for InAs as well. Finally we compare excitonic effects in piezoelectric and non-piezoelectric quantum wells. (orig.)

Piezoelectric MEMS resonators

CERN Document Server

Piazza, Gianluca

2017-01-01

This book introduces piezoelectric microelectromechanical (pMEMS) resonators to a broad audience by reviewing design techniques including use of finite element modeling, testing and qualification of resonators, and fabrication and large scale manufacturing techniques to help inspire future research and entrepreneurial activities in pMEMS. The authors discuss the most exciting developments in the area of materials and devices for the making of piezoelectric MEMS resonators, and offer direct examples of the technical challenges that need to be overcome in order to commercialize these types of devices. Some of the topics covered include: Widely-used piezoelectric materials, as well as materials in which there is emerging interest Principle of operation and design approaches for the making of flexural, contour-mode, thickness-mode, and shear-mode piezoelectric resonators, and examples of practical implementation of these devices Large scale manufacturing approaches, with a focus on the practical aspects associate...

Variation-aware advanced CMOS devices and SRAM

CERN Document Server

Shin, Changhwan

2016-01-01

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

Electromechanical characteristics of piezoelectric ceramic transformers in radial vibration composed of concentric piezoelectric ceramic disk and ring

International Nuclear Information System (INIS)

Lin, Shuyu; Hu, Jing; Fu, Zhiqiang

2013-01-01

A new type of piezoelectric ceramic transformer in radial vibration is presented. The piezoelectric transformer consists of a pairing of a concentric piezoelectric ceramic circular disk and ring. The inner piezoelectric ceramic disk is axially polarized and the outer piezoelectric ring is radially polarized. Based on the plane stress theory, the exact analytical theory for the piezoelectric transformer is developed and its electromechanical equivalent circuit is introduced. The resonance/anti-resonance frequency equations of the transformer are obtained and the relationship between the resonance/anti-resonance frequency, the effective electromechanical coupling coefficient and the geometrical dimensions of the piezoelectric transformer is analyzed. The dependency of the voltage transformation ratio on the frequency is obtained. To verify the analytical theory, a numerical method is used to simulate the electromechanical characteristics of the piezoelectric transformer. It is shown that the analytical resonance/anti-resonance frequencies are in good agreement with the numerical results. (paper)

Design optimization of radiation-hardened CMOS integrated circuits

International Nuclear Information System (INIS)

1975-01-01

Ionizing-radiation-induced threshold voltage shifts in CMOS integrated circuits will drastically degrade circuit performance unless the design parameters related to the fabrication process are properly chosen. To formulate an approach to CMOS design optimization, experimentally observed analytical relationships showing strong dependences between threshold voltage shifts and silicon dioxide thickness are utilized. These measurements were made using radiation-hardened aluminum-gate CMOS inverter circuits and have been corroborated by independent data taken from MOS capacitor structures. Knowledge of these relationships allows one to define ranges of acceptable CMOS design parameters based upon radiation-hardening capabilities and post-irradiation performance specifications. Furthermore, they permit actual design optimization of CMOS integrated circuits which results in optimum pre- and post-irradiation performance with respect to speed, noise margins, and quiescent power consumption. Theoretical and experimental results of these procedures, the applications of which can mean the difference between failure and success of a CMOS integrated circuit in a radiation environment, are presented

A measurement method for piezoelectric material properties under longitudinal compressive stress–-a compression test method for thin piezoelectric materials

International Nuclear Information System (INIS)

Kang, Lae-Hyong; Lee, Dae-Oen; Han, Jae-Hung

2011-01-01

We introduce a new compression test method for piezoelectric materials to investigate changes in piezoelectric properties under the compressive stress condition. Until now, compression tests of piezoelectric materials have been generally conducted using bulky piezoelectric ceramics and pressure block. The conventional method using the pressure block for thin piezoelectric patches, which are used in unimorph or bimorph actuators, is prone to unwanted bending and buckling. In addition, due to the constrained boundaries at both ends, the observed piezoelectric behavior contains boundary effects. In order to avoid these problems, the proposed method employs two guide plates with initial longitudinal tensile stress. By removing the tensile stress after bonding a piezoelectric material between the guide layers, longitudinal compressive stress is induced in the piezoelectric layer. Using the compression test specimens, two important properties, which govern the actuation performance of the piezoelectric material, the piezoelectric strain coefficients and the elastic modulus, are measured to evaluate the effects of applied electric fields and re-poling. The results show that the piezoelectric strain coefficient d 31 increases and the elastic modulus decreases when high voltage is applied to PZT5A, and the compression in the longitudinal direction decreases the piezoelectric strain coefficient d 31 but does not affect the elastic modulus. We also found that the re-poling of the piezoelectric material increases the elastic modulus, but the piezoelectric strain coefficient d 31 is not changed much (slightly increased) by re-poling

Relaxor-PT Single Crystal Piezoelectric Sensors

Directory of Open Access Journals (Sweden)

Xiaoning Jiang

2014-07-01

Full Text Available Relaxor-PbTiO3 piezoelectric single crystals have been widely used in a broad range of electromechanical devices, including piezoelectric sensors, actuators, and transducers. This paper reviews the unique properties of these single crystals for piezoelectric sensors. Design, fabrication and characterization of various relaxor-PT single crystal piezoelectric sensors and their applications are presented and compared with their piezoelectric ceramic counterparts. Newly applicable fields and future trends of relaxor-PT sensors are also suggested in this review paper.

Rare-Earth Calcium Oxyborate Piezoelectric Crystals ReCa4O(BO33: Growth and Piezoelectric Characterizations

Directory of Open Access Journals (Sweden)

Fapeng Yu

2014-07-01

Full Text Available Rare-earth calcium oxyborate crystals, ReCa4O(BO33 (ReCOB, Re = Er, Y, Gd, Sm, Nd, Pr, and La , are potential piezoelectric materials for ultrahigh temperature sensor applications, due to their high electrical resistivity at elevated temperature, high piezoelectric sensitivity and temperature stability. In this paper, different techniques for ReCOB single-crystal growth are introduced, including the Bridgman and Czochralski pulling methods. Crystal orientations and the relationships between the crystallographic and physical axes of the monoclinic ReCOB crystals are discussed. The procedures for dielectric, elastic, electromechanical and piezoelectric property characterization, taking advantage of the impedance method, are presented. In addition, the maximum piezoelectric coefficients for different piezoelectric vibration modes are explored, and the optimized crystal cuts free of piezoelectric cross-talk are obtained by rotation calculations.

A Fabry-Perot Interferometry Based MRI-Compatible Miniature Uniaxial Force Sensor for Percutaneous Needle Placement

OpenAIRE

Shang, Weijian; Su, Hao; Li, Gang; Furlong, Cosme; Fischer, Gregory S.

2013-01-01

Robot-assisted surgical procedures, taking advantage of the high soft tissue contrast and real-time imaging of magnetic resonance imaging (MRI), are developing rapidly. However, it is crucial to maintain tactile force feedback in MRI-guided needle-based procedures. This paper presents a Fabry-Perot interference (FPI) based system of an MRI-compatible fiber optic sensor which has been integrated into a piezoelectrically actuated robot for prostate cancer biopsy and brachytherapy in 3T MRI scan...

Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

Science.gov (United States)

Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

2017-12-01

With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

Vibration energy harvesting using piezoelectric unimorph cantilevers with unequal piezoelectric and nonpiezoelectric lengths

OpenAIRE

Gao, Xiaotong; Shih, Wei-Heng; Shih, Wan Y.

2010-01-01

We have examined a piezoelectric unimorph cantilever (PUC) with unequal piezoelectric and nonpiezoelectric lengths for vibration energy harvesting theoretically by extending the analysis of a PUC with equal piezoelectric and nonpiezoelectric lengths. The theoretical approach was validated by experiments. A case study showed that for a fixed vibration frequency, the maximum open-circuit induced voltage which was important for charge storage for later use occurred with a PUC that had a nonpiezo...

Torsion sensing based on patterned piezoelectric beams

Science.gov (United States)

Cha, Youngsu; You, Hangil

2018-03-01

In this study, we investigated the sensing characteristics of piezoelectric beams under torsional loads. We used partially patterned piezoelectric beams to sense torsion. In particular, the piezoelectric patches are located symmetrically with respect to the line of the shear center of the beam. The patterned piezoelectric beam is modeled as a slender beam, and its electrical responses are obtained by piezoelectric electromechanical equations. To validate the modeling framework, experiments are performed using a setup that forces pure torsional deformation. Three different geometric configurations of the patterned piezoelectric layer are used for the experiments. The frequency and amplitude of the forced torsional load are systematically varied in order to study the behavior of the piezoelectric sensor. Experimental results demonstrate that two voltage outputs of the piezoelectric beam are approximately out of phase with identical amplitude. Moreover, the length of the piezoelectric layers has a significant influence on the sensing properties. Our theoretical predictions using the model support the experimental findings.

A high power ZnO thin film piezoelectric generator

Science.gov (United States)

Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

2016-02-01

A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

Piezoelectric paint: characterization for further applications

International Nuclear Information System (INIS)

Yang, C; Fritzen, C-P

2012-01-01

Piezoelectric paint is a very attractive piezoelectric composite in many fields, such as non-destructive testing, or structural health monitoring. However, there are still many obstacles which restrict the real application of it. One of the main problems is that piezoelectric paint lacks a standard fabrication procedure, thus characterization is needed before use. The work presented here explores the characterization of piezoelectric paint. It starts with fabrication of samples with certain piezoelectric powder weight percentages. The microstructures of the samples are investigated by a scanning electron microscope; the results indicate that the fabrication method can produce high quality samples. This is followed by measurements of Young’s modulus and sensitivity. The piezoelectric charge constant d 31 is then deduced from the experimental data; the results agree well with a published result, which validates the effectiveness of the fabrication and characterization method. The characterized piezoelectric paint can expand its applications into different fields and therefore becomes a more promising and competitive smart material. (paper)

Piezoelectric Transformers: An Historical Review

Directory of Open Access Journals (Sweden)

Alfredo Vazquez Carazo

2016-04-01

Full Text Available Piezoelectric transformers (PTs are solid-state devices that transform electrical energy into electrical energy by means of a mechanical vibration. These devices are manufactured using piezoelectric materials that are driven at resonance. With appropriate design and circuitry, it is possible to step up and step down the voltages between the input and output sections of the piezoelectric transformer, without making use of magnetic materials and obtaining excellent conversion efficiencies. The initial concept of a piezoelectric ceramic transformer was proposed by Charles A. Rosen in 1954. Since then, the evolution of piezoelectric transformers through history has been linked to the relevant work of some excellent researchers as well as to the evolution in materials, manufacturing processes, and driving circuit techniques. This paper summarizes the historical evolution of the technology.

A Piezoelectric Shear Stress Sensor

Science.gov (United States)

Kim, Taeyang; Saini, Aditya; Kim, Jinwook; Gopalarathnam, Ashok; Zhu, Yong; Palmieri, Frank L.; Wohl, Christopher J.; Jiang, Xiaoning

2016-01-01

In this paper, a piezoelectric sensor with a floating element was developed for shear stress measurement. The piezoelectric sensor was designed to detect the pure shear stress suppressing effects of normal stress generated from the vortex lift-up by applying opposite poling vectors to the: piezoelectric elements. The sensor was first calibrated in the lab by applying shear forces and it showed high sensitivity to shear stress (=91.3 +/- 2.1 pC/Pa) due to the high piezoelectric coefficients of PMN-33%PT (d31=-1330 pC/N). The sensor also showed almost no sensitivity to normal stress (less than 1.2 pC/Pa) because of the electromechanical symmetry of the device. The usable frequency range of the sensor is 0-800 Hz. Keywords: Piezoelectric sensor, shear stress, floating element, electromechanical symmetry

A Standard CMOS Humidity Sensor without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

Energy Technology Data Exchange (ETDEWEB)

Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A. [Berkeley Sensor and Actuator Center, University of California, Davis, 1 Shields Avenue, Davis, California 95616 (United States); Tang, H.; Boser, B. E. [Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States); Tsai, J. M.; Daneman, M. [InvenSense, Inc., 1745 Technology Drive, San Jose, California 95110 (United States)

2015-06-29

This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

A nanoscale piezoelectric transformer for low-voltage transistors.

Science.gov (United States)

Agarwal, Sapan; Yablonovitch, Eli

2014-11-12

A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

Structural Origins of Silk Piezoelectricity.

Science.gov (United States)

Yucel, Tuna; Cebe, Peggy; Kaplan, David L

2011-02-22

Uniaxially oriented, piezoelectric silk films were prepared by a two-step method that involved: (1) air drying aqueous, regenerated silk fibroin solutions into films, and (2) drawing the silk films to a desired draw ratio. The utility of two different drawing techniques, zone drawing and water immersion drawing were investigated for processing the silk for piezoelectric studies. Silk films zone drawn to a ratio of λ= 2.7 displayed relatively high dynamic shear piezoelectric coefficients of d(14) = -1.5 pC/N, corresponding to over two orders of magnitude increase in d(14) due to film drawing. A strong correlation was observed between the increase in the silk II, β-sheet content with increasing draw ratio measured by FTIR spectroscopy (C(β)∝ e(2.5) (λ)), the concomitant increasing degree of orientation of β-sheet crystals detected via WAXD (FWHM = 0.22° for λ= 2.7), and the improvement in silk piezoelectricity (d(14)∝ e(2.4) (λ)). Water immersion drawing led to a predominantly silk I structure with a low degree of orientation (FWHM = 75°) and a much weaker piezoelectric response compared to zone drawing. Similarly, increasing the β-sheet crystallinity without inducing crystal alignment, e.g. by methanol treatment, did not result in a significant enhancement of silk piezoelectricity. Overall, a combination of a high degree of silk II, β-sheet crystallinity and crystalline orientation are prerequisites for a strong piezoelectric effect in silk. Further understanding of the structural origins of silk piezoelectricity will provide important options for future biotechnological and biomedical applications of this protein.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

Directory of Open Access Journals (Sweden)

Mohammad Reza Shokrani

2014-01-01

Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

Science.gov (United States)

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-11-15

The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

Miniature Piezoelectric Macro-Mass Balance

Science.gov (United States)

Sherrit, Stewart; Trebi-Ollennu, Ashitey; Bonitz, Robert G.; Bar-Cohen, Yoseph

2010-01-01

Mass balances usually use a strain gauge that requires an impedance measurement and is susceptible to noise and thermal drift. A piezoelectric balance can be used to measure mass directly by monitoring the voltage developed across the piezoelectric balance, which is linear with weight or it can be used in resonance to produce a frequency change proportional to the mass change (see figure). The piezoelectric actuator/balance is swept in frequency through its fundamental resonance. If a small mass is added to the balance, the resonance frequency shifts down in proportion to the mass. By monitoring the frequency shift, the mass can be determined. This design allows for two independent measurements of mass. Additionally, more than one sample can be verified because this invention allows for each sample to be transported away from the measuring device upon completion of the measurement, if required. A piezoelectric actuator, or many piezoelectric actuators, was placed between the collection plate of the sampling system and the support structure. As the sample mass is added to the plate, the piezoelectrics are stressed, causing them to produce a voltage that is proportional to the mass and acceleration. In addition, a change in mass delta m produces a change in the resonance frequency with delta f proportional to delta m. In a microgravity environment, the spacecraft could be accelerated to produce a force on the piezoelectric actuator that would produce a voltage proportional to the mass and acceleration. Alternatively, the acceleration could be used to force the mass on the plate, and the inertial effects of the mass on the plate would produce a shift in the resonance frequency with the change in frequency related to the mass change. Three prototypes of the mass balance mechanism were developed. These macro-mass balances each consist of a solid base and an APA 60 Cedrat flextensional piezoelectric actuator supporting a measuring plate. A similar structure with 3 APA

Frequency notching applicable to CMOS implementation of WLAN compatible IR-UWB pulse generators

DEFF Research Database (Denmark)

Shen, Ming; Mikkelsen, Jan H.; Jiang, Hao

2012-01-01

Due to overlapping frequency bands, IEEE 802.11a WLAN and Ultra Wide-Band systems potentially suffer from mutual interference problems. This paper proposes a method for inserting frequency notches into the IR-UWB power spectrum to ensure compatibility with WLAN systems. In contrast to conventional...... approaches where complicated waveform equations are used, the proposed method uses a dual-pulse frequency notching approach to achieve frequency suppression in selected bands. The proposed method offers a solution that is generically applicable to UWB pulse generators using different pulse waveforms...

Structured Piezoelectric Composites: Materials and Applications

OpenAIRE

Van den Ende, D.A.

2012-01-01

The piezoelectric effect, which causes a material to generate a voltage when it deforms, is very suitable for making integrated sensors, and (micro-) generators. However, conventional piezoelectric materials are either brittle ceramics or certain polymers with a low thermal stability, which limits their practical application to certain specific fields. Piezoelectric composites, which contain an active piezoelectric (ceramic) phase in a robust polymer matrix, can potentially have better proper...

Elastic properties of spherically anisotropic piezoelectric composites

International Nuclear Information System (INIS)

En-Bo, Wei; Guo-Qing, Gu; Ying-Ming, Poon

2010-01-01

Effective elastic properties of spherically anisotropic piezoelectric composites, whose spherically anisotropic piezoelectric inclusions are embedded in an infinite non-piezoelectric matrix, are theoretically investigated. Analytical solutions for the elastic displacements and the electric potentials under a uniform external strain are derived exactly. Taking into account of the coupling effects of elasticity, permittivity and piezoelectricity, the formula is derived for estimating the effective elastic properties based on the average field theory in the dilute limit. An elastic response mechanism is revealed, in which the effective elastic properties increase as inclusion piezoelectric properties increase and inclusion dielectric properties decrease. Moreover, a piezoelectric response mechanism, of which the effective piezoelectric response vanishes due to the symmetry of spherically anisotropic composite, is also disclosed. (condensed matter: structure, thermal and mechanical properties)

The giant piezoelectric effect: electric field induced monoclinic phase or piezoelectric distortion of the rhombohedral parent?

International Nuclear Information System (INIS)

Kisi, E H; Piltz, R O; Forrester, J S; Howard, C J

2003-01-01

Lead zinc niobate-lead titanate (PZN-PT) single crystals show very large piezoelectric strains for electric fields applied along the unit cell edges e.g. [001] R . It has been widely reported that this effect is caused by an electric field induced phase transition from rhombohedral (R3m) to monoclinic (Cm or Pm) symmetry in an essentially continuous manner. Group theoretical analysis using the computer program ISOTROPY indicates phase transitions between R3m and Cm (or Pm) must be discontinuous under Landau theory. An analysis of the symmetry of a strained unit cell in R3m and a simple expansion of the piezoelectric strain equation indicate that the piezoelectric distortion due to an electric field along a cell edge in rhombohedral perovskite-based ferroelectrics is intrinsically monoclinic (Cm), even for infinitesimal electric fields. PZN-PT crystals have up to nine times the elastic compliance of other piezoelectric perovskites and it might be expected that the piezoelectric strains are also very large. A field induced phase transition is therefore indistinguishable from the piezoelectric distortion and is neither sufficient nor necessary to understand the large piezoelectric response of PZN-PT

Nanometer CMOS ICs from basics to ASICs

CERN Document Server

J M Veendrick, Harry

2017-01-01

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

Piezoelectric Transformer Characterization and Application of Electronic Ballast

OpenAIRE

Lin, Ray-Lee

2001-01-01

The characterization and modeling of piezoelectric transformers are studied and developed for use in electronic ballasts. By replacing conventional L-C resonant tanks with piezoelectric transformers, inductor-less piezoelectric transformer electronic ballasts have been developed for use in fluorescent lamps. The piezoelectric transformer is a combination of piezoelectric actuators as the primary side and piezoelectric transducers as the secondary side, both of which work in longitudinal o...

CMOS-sensors for energy-resolved X-ray imaging

International Nuclear Information System (INIS)

Doering, D.; Amar-Youcef, S.; Deveaux, M.; Linnik, B.; Müntz, C.; Stroth, Joachim; Baudot, J.; Dulinski, W.; Kachel, M.

2016-01-01

Due to their low noise, CMOS Monolithic Active Pixel Sensors are suited to sense X-rays with a few keV quantum energy, which is of interest for high resolution X-ray imaging. Moreover, the good energy resolution of the silicon sensors might be used to measure this quantum energy. Combining both features with the good spatial resolution of CMOS sensors opens the potential to build ''color sensitive' X-ray cameras. Taking such colored images is hampered by the need to operate the CMOS sensors in a single photon counting mode, which restricts the photon flux capability of the sensors. More importantly, the charge sharing between the pixels smears the potentially good energy resolution of the sensors. Based on our experience with CMOS sensors for charged particle tracking, we studied techniques to overcome the latter by means of an offline processing of the data obtained from a CMOS sensor prototype. We found that the energy resolution of the pixels can be recovered at the expense of reduced quantum efficiency. We will introduce the results of our study and discuss the feasibility of taking colored X-ray pictures with CMOS sensors

Piezoelectric effects in biomaterials

International Nuclear Information System (INIS)

Zimmerman, R.L.

1976-03-01

Precision methods have been developed for the simultaneous measurement of the complex piezoelectric stress constants and the electric conduction and polarization currents. Samples of Collagen, keratin, and chitin are prepared and measured in such a way to optimize the determination of the position and orientation of the electric dipole moments. The temperature and the hydration state of the samples are varied during the measurement of the piezoelectric constants in an effort to understand the role of water in biological material. Above 40 0 C, the inherent piezolectricity is enhanced by the water of hydration, in contrast to the more easily understood reduction observed at lower temperatures. Gelatin, which has no inherent piezoelectricity, displays a piezoelectricity proportional to the currents of conduction and polarization. An analysis of the new effect shows that it is a measure of the variation of the resistivity with deformation (d rho/dS - rho) in the same way that the electric field induced piezoelectricity is a measure of the variation of the dielectric constant with deformation (dk/dS + k). Both are sensitive to electric dipole relaxation effects. (Author) [pt

Piezoelectric Microstructured Fibers via Drawing of Multimaterial Preforms.

Science.gov (United States)

Lu, Xin; Qu, Hang; Skorobogatiy, Maksim

2017-06-06

We demonstrate planar laminated piezoelectric generators and piezoelectric microstructured fibers based on BaTiO 3 -polyvinylidene and carbon-loaded-polyethylene materials combinations. The laminated piezoelectric generators were assembled by sandwiching the electrospun BaTiO 3 -polyvinylidene mat between two carbon-loaded-polyethylene films. The piezoelectric microstructured fiber was fabricated via drawing of the multilayer fiber preform, and features a swissroll geometry that have ~10 alternating piezoelectric and conductive layers. Both piezoelectric generators have excellent mechanical durability, and could retain their piezoelectric performance after 3 day's cyclic bend-release tests. Compared to the laminated generators, the piezoelectric fibers are advantageous as they could be directly woven into large-area commercial fabrics. Potential applications of the proposed piezoelectric fibers include micro-power-generation and remote sensing in wearable, automotive and aerospace industries.

Piezoelectric transducer array microspeaker

KAUST Repository

Carreno, Armando Arpys Arevalo

2016-12-19

In this paper we present the fabrication and characterization of a piezoelectric micro-speaker. The speaker is an array of micro-machined piezoelectric membranes, fabricated on silicon wafer using advanced micro-machining techniques. Each array contains 2n piezoelectric transducer membranes, where “n” is the bit number. Every element of the array has a circular shape structure. The membrane is made out four layers: 300nm of platinum for the bottom electrode, 250nm or lead zirconate titanate (PZT), a top electrode of 300nm and a structural layer of 50

Lead-Free Piezoelectrics

CERN Document Server

Nahm, Sahn

2012-01-01

Ecological restrictions in many parts of the world are demanding the elimination of Pb from all consumer items. At this moment in the piezoelectric ceramics industry, there is no issue of more importance than the transition to lead-free materials. The goal of Lead-Free Piezoelectrics is to provide a comprehensive overview of the fundamentals and developments in the field of lead-free materials and products to leading researchers in the world. The text presents chapters on demonstrated applications of the lead-free materials, which will allow readers to conceptualize the present possibilities and will be useful for both students and professionals conducting research on ferroelectrics, piezoelectrics, smart materials, lead-free materials, and a variety of applications including sensors, actuators, ultrasonic transducers and energy harvesters.

Piezoelectric Vibration Energy Harvesting Device Combined with Damper

Directory of Open Access Journals (Sweden)

Hung-I Lu

2014-05-01

Full Text Available Piezoelectricity is a type of material that enables mechanical energy and electrical energy to be interchangeable, which can be divided into positive piezoelectric effect and inverse piezoelectric effect. The positive piezoelectric effect is that the electric dipole moment of material generates changes when the piezoelectric material is subjected to pressure, resulting in electrical energy. Conversely, the inverse piezoelectric effect is the process of electrical energy converted into mechanical energy.

RESONANCE COMPATIBILITY BETWEEN ENDOSONIC TIPS AND ULTRASONIC DEVICES OF DIFFERENT BRANDS.

Directory of Open Access Journals (Sweden)

Kalin K. Shiyakov

2014-11-01

Full Text Available The aim of the study was to determine the compatibility of 6 piezoelectric scalers - Mini Piezon (EMS, Pyon 2 LED (W&H, Woodpecker HW-3H (GWMI, Varios 550 (NSK, P5 Newtron (Satelec-Acteon and DTE HD-7H (GWMI with 8 types of endosonic tips for separated instruments removal - K-files # 20 and 25 (EMS, ET25 (Satelec, Redo 2 (VDW, CPR-tips 6,7,8 (Obtura Spartan, Proultra Endo tips 6,7,8 (Dentsply-Maillefer, RT3 (EMS, Endo E3 (W&H, E7 (NSK. Methods: Examined and measured was the change in the tips’ displacement amplitude with the power increase of the scalers under total magnification 80x with an optical microscope (Leica MZ6 and an image-measuring software (Klonk Image Measurement. Results: Ultrasonic devices’ compatibility with the examined tips was as follows: Woodpecker – 76,9%, Mini Piezon – 61,5%, Pyon 2 LED - 30,7%, Varios 550 – 83,3%, P5 Newtron – 83,3%, DTE – 33,3%. Lack of compatibility was found in 40,35% of all cases. In 29,82% of the cases of lack of compatibility it was demonstrated as a non-effective vibration, and in the rest of the cases – 10,53% - uncontrolled over-powerful vibration, which was dangerous to use. Conclusion: Endosonic tips should be carefully chosen in accordance with the ultrasonic scaler used.

High-speed nonvolatile CMOS/MNOS RAM

International Nuclear Information System (INIS)

Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

1979-01-01

A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

Science.gov (United States)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

Energy collection via Piezoelectricity

International Nuclear Information System (INIS)

Kumar, Ch Naveen

2015-01-01

In the present days, wireless data transmission techniques are commonly used in electronic devices. For powering them connection needs to be made to the power supply through wires else power may be supplied from batteries. Batteries require charging, replacement and other maintenance efforts. So, some alternative methods need to be developed to keep the batteries full time charged and to avoid the need of any consumable external energy source to charge the batteries. Mechanical energy harvesting utilizes piezoelectric components where deformations produced by different means are directly converted to electrical charge via piezoelectric effect. The proposed work in this research recommends Piezoelectricity as a alternate energy source. The motive is to obtain a pollution-free energy source and to utilize and optimize the energy being wasted. Current work also illustrates the working principle of piezoelectric crystal and various sources of vibration for the crystal. (paper)

JPL CMOS Active Pixel Sensor Technology

Science.gov (United States)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Piezoelectric Transformers: An Historical Review

OpenAIRE

Alfredo Vazquez Carazo

2016-01-01

Piezoelectric transformers (PTs) are solid-state devices that transform electrical energy into electrical energy by means of a mechanical vibration. These devices are manufactured using piezoelectric materials that are driven at resonance. With appropriate design and circuitry, it is possible to step up and step down the voltages between the input and output sections of the piezoelectric transformer, without making use of magnetic materials and obtaining excellent conversion efficiencies. The...

High Temperature, High Power Piezoelectric Composite Transducers

Science.gov (United States)

Lee, Hyeong Jae; Zhang, Shujun; Bar-Cohen, Yoseph; Sherrit, StewarT.

2014-01-01

Piezoelectric composites are a class of functional materials consisting of piezoelectric active materials and non-piezoelectric passive polymers, mechanically attached together to form different connectivities. These composites have several advantages compared to conventional piezoelectric ceramics and polymers, including improved electromechanical properties, mechanical flexibility and the ability to tailor properties by using several different connectivity patterns. These advantages have led to the improvement of overall transducer performance, such as transducer sensitivity and bandwidth, resulting in rapid implementation of piezoelectric composites in medical imaging ultrasounds and other acoustic transducers. Recently, new piezoelectric composite transducers have been developed with optimized composite components that have improved thermal stability and mechanical quality factors, making them promising candidates for high temperature, high power transducer applications, such as therapeutic ultrasound, high power ultrasonic wirebonding, high temperature non-destructive testing, and downhole energy harvesting. This paper will present recent developments of piezoelectric composite technology for high temperature and high power applications. The concerns and limitations of using piezoelectric composites will also be discussed, and the expected future research directions will be outlined. PMID:25111242

The direct piezoelectric effect in the globular protein lysozyme

Science.gov (United States)

Stapleton, A.; Noor, M. R.; Sweeney, J.; Casey, V.; Kholkin, A. L.; Silien, C.; Gandhi, A. A.; Soulimane, T.; Tofail, S. A. M.

2017-10-01

Here, we present experimental evidence of the direct piezoelectric effect in the globular protein, lysozyme. Piezoelectric materials are employed in many actuating and sensing applications because they can convert mechanical energy into electrical energy and vice versa. Although originally studied in inorganic materials, several biological materials including amino acids and bone, also exhibit piezoelectricity. The exact mechanisms supporting biological piezoelectricity are not known, nor is it known whether biological piezoelectricity conforms strictly to the criteria of classical piezoelectricity. The observation of piezoelectricity in protein crystals presented here links biological piezoelectricity with the classical theory of piezoelectricity. We quantify the direct piezoelectric effect in monoclinic and tetragonal aggregate films of lysozyme using conventional techniques based on the Berlincourt Method. The largest piezoelectric effect measured in a crystalline aggregate film of lysozyme was approximately 6.5 pC N-1. These findings raise fundamental questions as to the possible physiological significance of piezoelectricity in lysozyme and the potential for technical applications.

Touching force response of the piezoelectric Braille cell.

Science.gov (United States)

Smithmaitrie, Pruittikorn; Kanjantoe, Jinda; Tandayya, Pichaya

2008-11-01

The objective of this research is to investigate dynamic responses of the piezoelectric Braille cell when it is subjected to both electrical signal and touching force. Physical behavior of the piezoelectric actuator inside the piezoelectric Braille cell is analyzed. The mathematical model of the piezoelectric Braille system is presented. Then, data of visually impaired people using a Braille Note is studied as design information and a reference input for calculation of the piezoelectric Braille response under the touching force. The results show dynamic responses of the piezoelectric Braille cell. The designed piezoelectric bimorph has a settling time of 0.15 second. The relationship between the Braille dot height and applied voltage is linear. The behavior of the piezoelectric Braille dot when it is touched during operation shows that the dot height is decreased as the force increases. The result provides understanding of the piezoelectric Braille cell behavior under both touching force and electrical excitation simultaneously. This is the important issue for the design and development of piezoelectric Braille cells in senses of controlling Braille dot displacement or force-feedback in the future.

Base Metal Co-Fired Multilayer Piezoelectrics

Directory of Open Access Journals (Sweden)

Lisheng Gao

2016-03-01

Full Text Available Piezoelectrics have been widely used in different kinds of applications, from the automobile industry to consumer electronics. The novel multilayer piezoelectrics, which are inspired by multilayer ceramic capacitors, not only minimize the size of the functional parts, but also maximize energy efficiency. Development of multilayer piezoelectric devices is at a significant crossroads on the way to achieving low costs, high efficiency, and excellent reliability. Concerning the costs of manufacturing multilayer piezoelectrics, the trend is to replace the costly noble metal internal electrodes with base metal materials. This paper discusses the materials development of metal co-firing and the progress of integrating current base metal chemistries. There are some significant considerations in metal co-firing multilayer piezoelectrics: retaining stoichiometry with volatile Pb and alkaline elements in ceramics, the selection of appropriate sintering agents to lower the sintering temperature with minimum impact on piezoelectric performance, and designing effective binder formulation for low pO2 burnout to prevent oxidation of Ni and Cu base metal.

SU-F-I-15: Evaluation of a New MR-Compatible Respiratory Motion Device at 3T

Energy Technology Data Exchange (ETDEWEB)

Soliman, A [Sunnybrook Research Institute, Toronto, ON (Canada); Sunnybrook Health Sciences Centre, Toronto, ON (Canada); Chugh, B; Keller, B [Sunnybrook Health Sciences Centre, Toronto, ON (Canada); University of Toronto, Toronto, ON (Canada); Sahgal, A; Song, W [Sunnybrook Research Institute, Toronto, ON (Canada); Sunnybrook Health Sciences Centre, Toronto, ON (Canada); University of Toronto, Toronto, ON (Canada)

2016-06-15

Purpose: Recent advances in MRI-guided radiotherapy has inspired the development of MRI-compatible motion devices that simulate patient periodic motion in the scanner, particularly respiratory motion. Most commercial devices rely on non MR-safe ferromagnetic stepper motors which are not practical for regular QA testing. This work evaluates the motion performance of a new fully MRI compatible respiratory motion device at 3T. Methods: The QUASAR™ MRI-compatible respiratory motion phantom has been recently developed by Modus QA Inc., London, ON, Canada. The prototype is constructed from diamagnetic materials with linear motion generated using MRI-compatible piezoelectric motors that can be safely inserted in the scanner bore. The tumor was represented by a fillable sphere and is attached to the linear motion generator. The spherical tumor-representative and its surroundings were filled with different concentrations of MnCl2 to produce realistic relaxation times. The motion was generated along the longitudinal (H/F) axis of the bore using sinusoidal reference waveform (amplitude = 15 mm, frequency 0.25 Hz). Imaging was then performed on 3T Philips Achieva using a 32-channel cardiac coil. Fast 2D spoiled gradient-echo was used with a spatial resolution of 1.8 × 1.8 mm{sup 2} and slice thickness of 4 mm. The motion waveform was then measured on the resultant image series by tracking the centroid of the sphere through the time series. This image-derived measured motion was compared to the software-generated reference waveform. Results: No visible distortions from the device were observed on the images. Excellent agreement between the measured and the reference waveforms were obtained. Negligible motion was observed in the lateral (R/L) direction. Conclusion: Our investigation demonstrates that this piezo-electric motor design is effective at simulating periodic motion and is a potential candidate for MRI-radiotherapy respiratory motion simulation. Future work should

SU-F-I-15: Evaluation of a New MR-Compatible Respiratory Motion Device at 3T

International Nuclear Information System (INIS)

Soliman, A; Chugh, B; Keller, B; Sahgal, A; Song, W

2016-01-01

Purpose: Recent advances in MRI-guided radiotherapy has inspired the development of MRI-compatible motion devices that simulate patient periodic motion in the scanner, particularly respiratory motion. Most commercial devices rely on non MR-safe ferromagnetic stepper motors which are not practical for regular QA testing. This work evaluates the motion performance of a new fully MRI compatible respiratory motion device at 3T. Methods: The QUASAR™ MRI-compatible respiratory motion phantom has been recently developed by Modus QA Inc., London, ON, Canada. The prototype is constructed from diamagnetic materials with linear motion generated using MRI-compatible piezoelectric motors that can be safely inserted in the scanner bore. The tumor was represented by a fillable sphere and is attached to the linear motion generator. The spherical tumor-representative and its surroundings were filled with different concentrations of MnCl2 to produce realistic relaxation times. The motion was generated along the longitudinal (H/F) axis of the bore using sinusoidal reference waveform (amplitude = 15 mm, frequency 0.25 Hz). Imaging was then performed on 3T Philips Achieva using a 32-channel cardiac coil. Fast 2D spoiled gradient-echo was used with a spatial resolution of 1.8 × 1.8 mm 2 and slice thickness of 4 mm. The motion waveform was then measured on the resultant image series by tracking the centroid of the sphere through the time series. This image-derived measured motion was compared to the software-generated reference waveform. Results: No visible distortions from the device were observed on the images. Excellent agreement between the measured and the reference waveforms were obtained. Negligible motion was observed in the lateral (R/L) direction. Conclusion: Our investigation demonstrates that this piezo-electric motor design is effective at simulating periodic motion and is a potential candidate for MRI-radiotherapy respiratory motion simulation. Future work should focus

Piezoelectric wave motor

Science.gov (United States)

Yerganian, Simon Scott

2001-07-17

A piezoelectric motor having a stator in which piezoelectric elements are contained in slots formed in the stator transverse to the desired wave motion. When an electric field is imposed on the elements, deformation of the elements imposes a force perpendicular to the sides of the slot, deforming the stator. Appropriate frequency and phase shifting of the electric field will produce a wave in the stator and motion in a rotor. In a preferred aspect, the piezoelectric elements are configured so that deformation of the elements in direction of an imposed electric field, generally referred to as the d.sub.33 direction, is utilized to produce wave motion in the stator. In a further aspect, the elements are compressed into the slots so as to minimize tensile stresses on the elements in use.

Piezoelectric energy harvesting

International Nuclear Information System (INIS)

Howells, Christopher A

2009-01-01

Piezoelectric materials can be used to convert oscillatory mechanical energy into electrical energy. This technology, together with innovative mechanical coupling designs, can form the basis for harvesting energy from mechanical motion. Piezoelectric energy can be harvested to convert walking motion from the human body into electrical power. Recently four proof-of-concept Heel Strike Units were developed where each unit is essentially a small electric generator that utilizes piezoelectric elements to convert mechanical motion into electrical power in the form factor of the heel of a boot. The results of the testing and evaluation and the performance of this small electric generator are presented. The generator's conversion of mechanical motion into electrical power, the processes it goes through to produce useable power and commercial applications of the Heel Strike electric generator are discussed.

CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

Science.gov (United States)

Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

2018-04-01

Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches

International Nuclear Information System (INIS)

Klee, M; Boots, H; Kumar, B; Heesch, C van; Mauczok, R; Keur, W; Wild, M de; Esch, H van; Roest, A L; Reimann, K; Leuken, L van; Wunnicke, O; Zhao, J; Schmitz, G; Mienkina, M; Mleczko, M; Tiggelman, M

2010-01-01

Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance devices in small modules. High-K 'Integrated Discretes' devices have been developed, which are based on thin film ferroelectric capacitors integrated together with resistors and ESD protection diodes in a small Si-based chip-scale package. Making use of ferroelectric thin films with relative permittivity of 950-1600 and stacking processes of capacitors, extremely high capacitance densities of 20-520 nF/mm 2 , high breakdown voltages up to 140 V and lifetimes of more than 10 years at operating voltages of 5 V and 85 deg. C are achieved. Thin film high-density capacitors play also an important role as tunable capacitors for applications such as tuneable matching circuits for RF sections of mobile phones. The performance of thin film tuneable capacitors at frequencies between 1 MHz and 1 GHz is investigated. Finally thin film piezoelectric ultrasound transducers, processed in Si- related processes, are attractive for medical imaging, since they enable large bandwidth (>100%), high frequency operation and have the potential to integrate electronics. With these piezoelectric thin film ultrasound transducers real time ultrasound images have been realized. Finally, piezoelectric thin films are used to manufacture galvanic MEMS switches. A model for the quasi-static mechanical behaviour is presented and compared with measurements.

Structure-Property Study of Piezoelectricity in Polyimides

Science.gov (United States)

Ounaies, Zoubeida; Park, Cheol; Harrison, Joycelyn S.; Smith, Joseph G.; Hinkley, Jeffrey

1999-01-01

High performance piezoelectric polymers are of interest to NASA as they may be useful for a variety of sensor applications. Over the past few years research on piezoelectric polymers has led to the development of promising high temperature piezoelectric responses in some novel polyimides. In this study, a series of polyimides have been studied with systematic variations in the diamine monomers that comprise the polyimide while holding the dianhydride constant. The effect of structural changes, including variations in the nature and concentration of dipolar groups, on the remanent polarization and piezoelectric coefficient is examined. Fundamental structure-piezoelectric property insight will enable the molecular design of polymers possessing distinct improvements over state-of-the-art piezoelectric polymers including enhanced polarization, polarization stability at elevated temperatures, and improved processability.

Piezoelectric Structures and Low Power Generation Devices

Directory of Open Access Journals (Sweden)

Irinela CHILIBON

2016-10-01

Full Text Available A short overview of different piezoelectric structures and devices for generating renewable electricity under mechanical actions is presented. A vibrating piezoelectric device differs from a typical electrical power source in that it has capacitive rather than inductive source impedance, and may be driven by mechanical vibrations of varying amplitude. Several techniques have been developed to extract energy from the environment. Generally, “vibration energy” could be converted into electrical energy by three techniques: electrostatic charge, magnetic fields and piezoelectric. Mechanical resonance frequency of piezoelectric bimorph transducers depends on geometric size (length, width, and thickness of each layer, and the piezoelectric coefficients of the piezoelectric material. Manufacturing processes and intended applications of several energy harvesting devices are presented.

Technology CAD for germanium CMOS circuit

Energy Technology Data Exchange (ETDEWEB)

Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

2006-12-15

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

Technology CAD for germanium CMOS circuit

International Nuclear Information System (INIS)

Saha, A.R.; Maiti, C.K.

2006-01-01

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

Resistor Extends Life Of Battery In Clocked CMOS Circuit

Science.gov (United States)

Wells, George H., Jr.

1991-01-01

Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

Carbon Nanotube Integration with a CMOS Process

Science.gov (United States)

Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

2010-01-01

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

Piezoelectric Ceramics Characterization

National Research Council Canada - National Science Library

Jordan, T

2001-01-01

... the behavior of a piezoelectric material. We have attempted to cover the most common measurement methods as well as introduce parameters of interest. Excellent sources for more in-depth coverage of specific topics can be found in the bibliography. In most cases, we refer to lead zirconate titanate (PZT) to illustrate some of the concepts since it is the most widely used and studied piezoelectric ceramic to date.

Depleted CMOS pixels for LHC proton–proton experiments

International Nuclear Information System (INIS)

Wermes, N.

2016-01-01

While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

Single photon detection and localization accuracy with an ebCMOS camera

Energy Technology Data Exchange (ETDEWEB)

Cajgfinger, T. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Dominjon, A., E-mail: agnes.dominjon@nao.ac.jp [Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France); Barbier, R. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France)

2015-07-01

The CMOS sensor technologies evolve very fast and offer today very promising solutions to existing issues facing by imaging camera systems. CMOS sensors are very attractive for fast and sensitive imaging thanks to their low pixel noise (1e-) and their possibility of backside illumination. The ebCMOS group of IPNL has produced a camera system dedicated to Low Light Level detection and based on a 640 kPixels ebCMOS with its acquisition system. After reminding the principle of detection of an ebCMOS and the characteristics of our prototype, we confront our camera to other imaging systems. We compare the identification efficiency and the localization accuracy of a point source by four different photo-detection devices: the scientific CMOS (sCMOS), the Charge Coupled Device (CDD), the Electron Multiplying CCD (emCCD) and the Electron Bombarded CMOS (ebCMOS). Our ebCMOS camera is able to identify a single photon source in less than 10 ms with a localization accuracy better than 1 µm. We report as well efficiency measurement and the false positive identification of the ebCMOS camera by identifying more than hundreds of single photon sources in parallel. About 700 spots are identified with a detection efficiency higher than 90% and a false positive percentage lower than 5. With these measurements, we show that our target tracking algorithm can be implemented in real time at 500 frames per second under a photon flux of the order of 8000 photons per frame. These results demonstrate that the ebCMOS camera concept with its single photon detection and target tracking algorithm is one of the best devices for low light and fast applications such as bioluminescence imaging, quantum dots tracking or adaptive optics.

All-Organic High-Performance Piezoelectric Nanogenerator with Multilayer Assembled Electrospun Nanofiber Mats for Self-Powered Multifunctional Sensors.

Science.gov (United States)

Maity, Kuntal; Mandal, Dipankar

2018-05-30

Rapid development of wearable electronics, piezoelectric nanogenerator (PNG), has been paid a special attention because of its sustainable and accessible energy generation. In this context, we present a simple yet highly efficient design strategy to enhance the output performance of an all-organic PNG (OPNG) based on multilayer assembled electrospun poly(vinylidene fluoride) (PVDF) nanofiber (NF) mats where vapor-phase polymerized poly(3,4-ethylenedioxythiophene)-coated PVDF NFs are assembled as electrodes and neat PVDF NFs are utilized as an active component. In addition to the multilayer assembly, electrode compatibility and durability remain a challenging task to mitigate the primary requirements of wearable electronics. A multilayer networked three-dimensional structure integrated with a compatible electrode thereby provides enhanced output voltage and current (e.g., open-circuit voltage, V oc ≈ 48 V, and short-circuit current, I sc ≈ 6 μA, upon 8.3 kPa of the applied stress amplitude) with superior piezoelectric energy conversion efficiency of 66% compared to the single-mat device. Besides, OPNG also shows ultrasensitivity toward human movements such as foot strikes and walking. The weight measurement mapping is critically explored by principal component analysis that may have enormous applications in medical diagnosis to smart packaging industries. More importantly, fatigue test under continuous mechanical impact (over 6 months) shows great promise as a robust wearable mechanical energy harvester.

Broadband image sensor array based on graphene-CMOS integration

Science.gov (United States)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

CMOS Cell Sensors for Point-of-Care Diagnostics

Science.gov (United States)

Adiguzel, Yekbun; Kulah, Haluk

2012-01-01

The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies. PMID:23112587

CMOS capacitive sensors for lab-on-chip applications a multidisciplinary approach

CERN Document Server

Ghafar-Zadeh, Ebrahim

2010-01-01

The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies,

Using Diffusion Bonding in Making Piezoelectric Actuators

Science.gov (United States)

Sager, Frank E.

2003-01-01

A technique for the fabrication of piezoelectric actuators that generate acceptably large forces and deflections at relatively low applied voltages involves the stacking and diffusion bonding of multiple thin piezoelectric layers coated with film electrodes. The present technique stands in contrast to an older technique in which the layers are bonded chemically, by use of urethane or epoxy agents. The older chemical-bonding technique entails several disadvantages, including the following: It is difficult to apply the bonding agents to the piezoelectric layers. It is difficult to position the layers accurately and without making mistakes. There is a problem of disposal of hazardous urethane and epoxy wastes. The urethane and epoxy agents are nonpiezoelectric materials. As such, they contribute to the thickness of a piezoelectric laminate without contributing to its performance; conversely, for a given total thickness, the performance of the laminate is below that of a unitary piezoelectric plate of the same thickness. The figure depicts some aspects of the fabrication of a laminated piezoelectric actuator by the present diffusion- bonding technique. First, stock sheets of the piezoelectric material are inspected and tested. Next, the hole pattern shown in the figure is punched into the sheets. Alternatively, if the piezoelectric material is not a polymer, then the holes are punched in thermoplastic films. Then both faces of each punched piezoelectric sheet or thermoplastic film are coated with a silver-ink electrode material by use of a silkscreen printer. The electrode and hole patterns are designed for minimal complexity and minimal waste of material. After a final electrical test, all the coated piezoelectric layers (or piezoelectric layers and coated thermoplastic films) are stacked in an alignment jig, which, in turn, is placed in a curved press for the diffusion-bonding process. In this process, the stack is pressed and heated at a specified curing temperature

High-Fidelity Piezoelectric Audio Device

Science.gov (United States)

Woodward, Stanley E.; Fox, Robert L.; Bryant, Robert G.

2003-01-01

ModalMax is a very innovative means of harnessing the vibration of a piezoelectric actuator to produce an energy efficient low-profile device with high-bandwidth high-fidelity audio response. The piezoelectric audio device outperforms many commercially available speakers made using speaker cones. The piezoelectric device weighs substantially less (4 g) than the speaker cones which use magnets (10 g). ModalMax devices have extreme fabrication simplicity. The entire audio device is fabricated by lamination. The simplicity of the design lends itself to lower cost. The piezoelectric audio device can be used without its acoustic chambers and thereby resulting in a very low thickness of 0.023 in. (0.58 mm). The piezoelectric audio device can be completely encapsulated, which makes it very attractive for use in wet environments. Encapsulation does not significantly alter the audio response. Its small size (see Figure 1) is applicable to many consumer electronic products, such as pagers, portable radios, headphones, laptop computers, computer monitors, toys, and electronic games. The audio device can also be used in automobile or aircraft sound systems.

A Capacitance-Based Methodology for the Estimation of Piezoelectric Coefficients of Poled Piezoelectric Materials

KAUST Repository

Al Ahmad, Mahmoud; Alshareef, Husam N.

2010-01-01

A methodology is proposed to estimate the piezoelectric coefficients of bulk piezoelectric materials using simple capacitance measurements. The extracted values of d33 and d31 from the capacitance measurements were 506 pC/N and 247 p

CMOS optimization for radiation hardness

International Nuclear Information System (INIS)

Derbenwick, G.F.; Fossum, J.G.

1975-01-01

Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

Piezoelectric energy harvesting

Energy Technology Data Exchange (ETDEWEB)

Howells, Christopher A [Power Technology Branch, US Army, CERDEC, C2D, Ft. Belvoir, VA 22060-5816 (United States)

2009-07-15

Piezoelectric materials can be used to convert oscillatory mechanical energy into electrical energy. This technology, together with innovative mechanical coupling designs, can form the basis for harvesting energy from mechanical motion. Piezoelectric energy can be harvested to convert walking motion from the human body into electrical power. Recently four proof-of-concept Heel Strike Units were developed where each unit is essentially a small electric generator that utilizes piezoelectric elements to convert mechanical motion into electrical power in the form factor of the heel of a boot. The results of the testing and evaluation and the performance of this small electric generator are presented. The generator's conversion of mechanical motion into electrical power, the processes it goes through to produce useable power and commercial applications of the Heel Strike electric generator are discussed. (author)

Piezoelectricity in polymers

International Nuclear Information System (INIS)

Kepler, R.G.; Anderson, R.A.

1980-01-01

Piezoelectricity and related properties of polymers are reviewed. After presenting a historical overview of the field, the mathematical basis of piezo- and pyroelectricity is summarized. We show how the experimentally measured quantities are related to the changes in polarization and point out the serious inequlity between direct and converse piezoelectric coefficients in polymers. Theoretical models of the various origins of piezo- and pyroelectricity, which include piezoelectricity due to inhomogeneous material properties and strains, are reviewed. Relaxational effects are also considered. Experimental techniques are examined and the results for different materials are presented. Because of the considerable work in recent years polyimylidene fluoride, this polymer receives the majority of the attention. The numerous applications of piezo-and pyroelectric polymers are mentioned. This article concludes with a discussion of the possible role of piezo- and pyroelectricity in biological system

Orthotropic Piezoelectricity in 2D Nanocellulose.

Science.gov (United States)

García, Y; Ruiz-Blanco, Yasser B; Marrero-Ponce, Yovani; Sotomayor-Torres, C M

2016-10-06

The control of electromechanical responses within bonding regions is essential to face frontier challenges in nanotechnologies, such as molecular electronics and biotechnology. Here, we present Iβ-nanocellulose as a potentially new orthotropic 2D piezoelectric crystal. The predicted in-layer piezoelectricity is originated on a sui-generis hydrogen bonds pattern. Upon this fact and by using a combination of ab-initio and ad-hoc models, we introduce a description of electrical profiles along chemical bonds. Such developments lead to obtain a rationale for modelling the extended piezoelectric effect originated within bond scales. The order of magnitude estimated for the 2D Iβ-nanocellulose piezoelectric response, ~pm V -1 , ranks this material at the level of currently used piezoelectric energy generators and new artificial 2D designs. Such finding would be crucial for developing alternative materials to drive emerging nanotechnologies.

Orthotropic Piezoelectricity in 2D Nanocellulose

Science.gov (United States)

García, Y.; Ruiz-Blanco, Yasser B.; Marrero-Ponce, Yovani; Sotomayor-Torres, C. M.

2016-10-01

The control of electromechanical responses within bonding regions is essential to face frontier challenges in nanotechnologies, such as molecular electronics and biotechnology. Here, we present Iβ-nanocellulose as a potentially new orthotropic 2D piezoelectric crystal. The predicted in-layer piezoelectricity is originated on a sui-generis hydrogen bonds pattern. Upon this fact and by using a combination of ab-initio and ad-hoc models, we introduce a description of electrical profiles along chemical bonds. Such developments lead to obtain a rationale for modelling the extended piezoelectric effect originated within bond scales. The order of magnitude estimated for the 2D Iβ-nanocellulose piezoelectric response, ~pm V-1, ranks this material at the level of currently used piezoelectric energy generators and new artificial 2D designs. Such finding would be crucial for developing alternative materials to drive emerging nanotechnologies.

Recent Advances in the Control of Piezoelectric Actuators

Directory of Open Access Journals (Sweden)

Ziqiang Chi

2014-11-01

Full Text Available The micro/nano positioning field has made great progress towards enabling the advance of micro/nano technology. Micro/nano positioning stages actuated by piezoelectric actuators are the key devices in micro/nano manipulation. The control of piezoelectric actuators has emerged as a hot topic in recent years. Piezoelectric materials have inherent hysteresis and creep nonlinearity, which can reduce the accuracy of the manipulation, even causing the instability of the whole system. Remarkable efforts have been made to compensate for the nonlinearity of piezoelectric actuation through the mathematical modelling and control approaches. This paper provides a review of recent advances on the control of piezoelectric actuators. After a brief introduction of basic components of typical piezoelectric micro/nano positioning platforms, the working principle and modelling of piezoelectric actuators are outlined in this paper. This is followed with the major control method and recent progress is presented in detail. Finally, some open issues and future work on the control of piezoelectric actuators are extensively discussed.

A Single-Transistor Active Pixel CMOS Image Sensor Architecture

International Nuclear Information System (INIS)

Zhang Guo-An; He Jin; Zhang Dong-Wei; Su Yan-Mei; Wang Cheng; Chen Qin; Liang Hai-Lang; Ye Yun

2012-01-01

A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

Nonlinear kinematics for piezoelectricity in ALEGRA-EMMA.

Energy Technology Data Exchange (ETDEWEB)

Mitchell, John Anthony; Fuller, Timothy Jesse

2013-09-01

This report develops and documents nonlinear kinematic relations needed to implement piezoelectric constitutive models in ALEGRA-EMMA [5], where calculations involving large displacements and rotations are routine. Kinematic relationships are established using Gausss law and Faradays law; this presentation on kinematics goes beyond piezoelectric materials and is applicable to all dielectric materials. The report then turns to practical details of implementing piezoelectric models in an application code where material principal axes are rarely aligned with user defined problem coordinate axes. This portion of the report is somewhat pedagogical but is necessary in order to establish documentation for the piezoelectric implementation in ALEGRA-EMMA. This involves transforming elastic, piezoelectric, and permittivity moduli from material principal axes to problem coordinate axes. The report concludes with an overview of the piezoelectric implementation in ALEGRA-EMMA and small verification examples.

Backside illuminated CMOS-TDI line scan sensor for space applications

Science.gov (United States)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

The giant piezoelectric effect: electric field induced monoclinic phase or piezoelectric distortion of the rhombohedral parent?

CERN Document Server

Kisi, E H; Forrester, J S; Howard, C J

2003-01-01

Lead zinc niobate-lead titanate (PZN-PT) single crystals show very large piezoelectric strains for electric fields applied along the unit cell edges e.g. [001] sub R. It has been widely reported that this effect is caused by an electric field induced phase transition from rhombohedral (R3m) to monoclinic (Cm or Pm) symmetry in an essentially continuous manner. Group theoretical analysis using the computer program ISOTROPY indicates phase transitions between R3m and Cm (or Pm) must be discontinuous under Landau theory. An analysis of the symmetry of a strained unit cell in R3m and a simple expansion of the piezoelectric strain equation indicate that the piezoelectric distortion due to an electric field along a cell edge in rhombohedral perovskite-based ferroelectrics is intrinsically monoclinic (Cm), even for infinitesimal electric fields. PZN-PT crystals have up to nine times the elastic compliance of other piezoelectric perovskites and it might be expected that the piezoelectric strains are also very large. ...

A Concentric Tube Continuum Robot with Piezoelectric Actuation for MRI-Guided Closed-Loop Targeting

Science.gov (United States)

Su, Hao; Li, Gang; Rucker, D. Caleb; Webster, Robert J.; Fischer, Gregory S.

2017-01-01

This paper presents the design, modeling and experimental evaluation of a magnetic resonance imaging (MRI)-compatible concentric tube continuum robotic system. This system enables MRI-guided deployment of a precurved and steerable concentric tube continuum mechanism, and is suitable for clinical applications where a curved trajectory is needed. This compact 6 degree-of-freedom (DOF) robotic system is piezoelectrically-actuated, and allows simultaneous robot motion and imaging with no visually observable image artifact. The targeting accuracy is evaluated with optical tracking system and gelatin phantom under live MRI-guidance with Root Mean Square (RMS) errors of 1.94 and 2.17 mm respectively. Furthermore, we demonstrate that the robot has kinematic redundancy to reach the same target through different paths. This was evaluated in both free space and MRI-guided gelatin phantom trails, with RMS errors of 0.48 and 0.59 mm respectively. As the first of its kind, MRI-guided targeted concentric tube needle placements with ex vivo porcine liver are demonstrated with 4.64 mm RMS error through closed-loop control of the piezoelectrically-actuated robot. PMID:26983842

Self-calibrated humidity sensor in CMOS without post-processing.

Science.gov (United States)

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2012-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Self-Calibrated Humidity Sensor in CMOS without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Theoretical analysis of dynamic property for piezoelectric cantilever triple-layer benders with large piezoelectric and electromechanical coupling coefficients

Directory of Open Access Journals (Sweden)

Li Jiao Gong

2016-09-01

Full Text Available Ferroelectric single crystals, such as PZN-PT, provide novel prospects in piezoelectric bending devices such as actuators, sensors or energy harvesters because of their extraordinarily large piezoelectric coefficients. However, large errors may occur in some analyses on electromechanical behaviors using the conventional models. We find the bending rigidity of piezoelectric composited bender is affected not only by thickness, width and the modulus of elasticity of the different layers but also electromechanical coupling coefficients (EMCCs of the piezoelectric material and the larger EMCCs mean more marked effect. This paper focuses on the derivation of the applied input excitation and output response characteristics in the circular frequency domain for piezoelectric cantilever triple-layer benders (PCTBs, taking into account the secondary piezoelectric effect. Analytic dynamic descriptions of such actuators and transducers are obtained. Based on the presented models dynamic features of PCTB composed of PZN-8%PT are calculated, and numerical results coincide with simulations using the finite element method (FEM.

Radiation-hardened bulk CMOS technology

International Nuclear Information System (INIS)

Dawes, W.R. Jr.; Habing, D.H.

1979-01-01

The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

CMOS/SOS processing

Science.gov (United States)

Ramondetta, P.

1980-01-01

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

Directory of Open Access Journals (Sweden)

Jose Luis Muñoz-Gamarra

2016-02-01

Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

Multistage Force Amplification of Piezoelectric Stacks

Science.gov (United States)

Xu, Tian-Bing (Inventor); Siochi, Emilie J. (Inventor); Zuo, Lei (Inventor); Jiang, Xiaoning (Inventor); Kang, Jin Ho (Inventor)

2015-01-01

Embodiments of the disclosure include an apparatus and methods for using a piezoelectric device, that includes an outer flextensional casing, a first cell and a last cell serially coupled to each other and coupled to the outer flextensional casing such that each cell having a flextensional cell structure and each cell receives an input force and provides an output force that is amplified based on the input force. The apparatus further includes a piezoelectric stack coupled to each cell such that the piezoelectric stack of each cell provides piezoelectric energy based on the output force for each cell. Further, the last cell receives an input force that is the output force from the first cell and the last cell provides an output apparatus force In addition, the piezoelectric energy harvested is based on the output apparatus force. Moreover, the apparatus provides displacement based on the output apparatus force.

Simulations of depleted CMOS sensors for high-radiation environments

CERN Document Server

Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

2017-01-01

After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

Piezoelectric materials for tissue regeneration: A review.

Science.gov (United States)

Rajabi, Amir Hossein; Jaffe, Michael; Arinzeh, Treena Livingston

2015-09-01

The discovery of piezoelectricity, endogenous electric fields and transmembrane potentials in biological tissues raised the question whether or not electric fields play an important role in cell function. It has kindled research and the development of technologies in emulating biological electricity for tissue regeneration. Promising effects of electrical stimulation on cell growth and differentiation and tissue growth has led to interest in using piezoelectric scaffolds for tissue repair. Piezoelectric materials can generate electrical activity when deformed. Hence, an external source to apply electrical stimulation or implantation of electrodes is not needed. Various piezoelectric materials have been employed for different tissue repair applications, particularly in bone repair, where charges induced by mechanical stress can enhance bone formation; and in neural tissue engineering, in which electric pulses can stimulate neurite directional outgrowth to fill gaps in nervous tissue injuries. In this review, a summary of piezoelectricity in different biological tissues, mechanisms through which electrical stimulation may affect cellular response, and recent advances in the fabrication and application of piezoelectric scaffolds will be discussed. The discovery of piezoelectricity, endogenous electric fields and transmembrane potentials in biological tissues has kindled research and the development of technologies using electrical stimulation for tissue regeneration. Piezoelectric materials generate electrical activity in response to deformations and allow for the delivery of an electrical stimulus without the need for an external power source. As a scaffold for tissue engineering, growing interest exists due to its potential of providing electrical stimulation to cells to promote tissue formation. In this review, we cover the discovery of piezoelectricity in biological tissues, its connection to streaming potentials, biological response to electrical stimulation and

CMOS Enabled Microfluidic Systems for Healthcare Based Applications

KAUST Repository

Khan, Sherjeel M.; Gumus, Abdurrahman; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2018-01-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications

KAUST Repository

Khan, Sherjeel M.

2018-02-27

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond

International Nuclear Information System (INIS)

Kim, Y; Pham, C; Chang, J P

2015-01-01

This review focuses on recent accomplishments on complex metal oxide based multifunctional materials and the potential they hold in advancing integrated circuits. It begins with metal oxide based high-κ materials to highlight the success of their integration since 45 nm complementary metal–oxide–semiconductor (CMOS) devices. By simultaneously offering a higher dielectric constant for improved capacitance as well as providing a thicker physical layer to prevent the quantum mechanical tunnelling of electrons, high-κ materials have enabled the continued down-scaling of CMOS based devices. The most recent technology driver has been the demand to lower device power consumption, which requires the design and synthesis of novel materials, such as complex metal oxides that exhibit remarkable tunability in their ferromagnetic, ferroelectric and multiferroic properties. These properties make them suitable for a wide variety of applications such as magnetoelectric random access memory, radio frequency band pass filters, antennae and magnetic sensors. Single-phase multiferroics, while rare, offer unique functionalities which have motivated much scientific and technological research to ascertain the origins of their multiferroicity and their applicability to potential devices. However, due to the weak magnetoelectric coupling for single-phase multiferroics, engineered multiferroic composites based on magnetostrictive ferromagnets interfacing piezoelectrics or ferroelectrics have shown enhanced multiferroic behaviour from effective strain coupling at the interface. In addition, nanostructuring of the ferroic phases has demonstrated further improvement in the coupling effect. Therefore, single-phase and engineered composite multiferroics consisting of complex metal oxides are reviewed in terms of magnetoelectric coupling effects and voltage controlled ferromagnetic properties, followed by a review on the integration challenges that need to be overcome to realize the

Prevention of CMOS latch-up by gold doping

International Nuclear Information System (INIS)

Dawes, W.R.; Derbenwick, G.F.

1976-01-01

CMOS integrated circuits fabricated with the bulk silicon technology typically exhibit latch-up effects in either an ionizing radiation environment or an overvoltage stress condition. The latch-up effect has been shown to arise from regenerative switching, analogous to an SCR, in the adjacent parasitic bipolar transistors formed during the fabrication of a bulk CMOS device. Once latch-up has been initiated, it is usually self-sustaining and eventually destructive. Naturally, the circuit is inoperative during latch-up. This paper discusses a generic process technique that prevents the latch-up mechanism in CMOS devices

Piezoelectric energy harvesting through shear mode operation

International Nuclear Information System (INIS)

Malakooti, Mohammad H; Sodano, Henry A

2015-01-01

Piezoelectric materials are excellent candidates for use in energy harvesting applications due to their high electromechanical coupling properties that enable them to convert input mechanical energy into useful electric power. The electromechanical coupling coefficient of the piezoelectric material is one of the most significant parameters affecting energy conversion and is dependent on the piezoelectric mode of operation. In most piezoceramics, the d 15 piezoelectric shear coefficient is the highest coefficient compared to the commonly used axial and transverse modes that utilize the d 33 and the d 31 piezoelectric strain coefficients. However, complicated electroding methods and challenges in evaluating the performance of energy harvesting devices operating in the shear mode have slowed research in this area. The shear deformation of a piezoelectric layer can be induced in a vibrating sandwich beam with a piezoelectric core. Here, a model based on Timoshenko beam theory is developed to predict the electric power output from a cantilever piezoelectric sandwich beam under base excitations. It is shown that the energy harvester operating in the shear mode is able to generate ∼50% more power compared to the transverse mode for a numerical case study. Reduced models of both shear and transverse energy harvesters are obtained to determine the optimal load resistance in the system and perform an efficiency comparison between two models with fixed and adaptive resistances. (paper)

Toward CMOS image sensor based glucose monitoring.

Science.gov (United States)

Devadhasan, Jasmine Pramila; Kim, Sanghyo

2012-09-07

Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

High-voltage CMOS detectors

International Nuclear Information System (INIS)

Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

2016-01-01

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

High-voltage CMOS detectors

Energy Technology Data Exchange (ETDEWEB)

Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

2016-07-11

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

Science.gov (United States)

Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

2009-05-01

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

New design for inertial piezoelectric motors

Science.gov (United States)

Liu, Lige; Ge, Weifeng; Meng, Wenjie; Hou, Yubin; Zhang, Jing; Lu, Qingyou

2018-03-01

We have designed, implemented, and tested a novel inertial piezoelectric motor (IPM) that is the first IPM to have controllable total friction force, which means that it sticks with large total friction forces and slips with severely reduced total friction forces. This allows the IPM to work with greater robustness and produce a larger output force at a lower threshold voltage while also providing higher rigidity. This is a new IPM design that means that the total friction force can be dramatically reduced or even canceled where necessary by pushing the clamping points at the ends of a piezoelectric tube that contains the sliding shaft inside it in the opposite directions during piezoelectric deformation. Therefore, when the shaft is propelled forward by another exterior piezoelectric tube, the inner piezoelectric tube can deform to reduce the total friction force acting on the shaft instantly and cause more effective stepping movement of the shaft. While our new IPM requires the addition of another piezoelectric tube, which leads to an increase in volume of 120% when compared with traditional IPMs, the average step size has increased by more than 400% and the threshold voltage has decreased by more than 50 V. The improvement in performance is far more significant than the increase in volume. This enhanced performance will allow the proposed IPM to work under large load conditions where a simple and powerful piezoelectric motor is needed.

Nano-Scale Positioning Design with Piezoelectric Materials

Directory of Open Access Journals (Sweden)

Yung Yue Chen

2017-12-01

Full Text Available Piezoelectric materials naturally possess high potential to deliver nano-scale positioning resolution; hence, they are adopted in a variety of engineering applications widely. Unfortunately, unacceptable positioning errors always appear because of the natural hysteresis effect of the piezoelectric materials. This natural property must be mitigated in practical applications. For solving this drawback, a nonlinear positioning design is proposed in this article. This nonlinear positioning design of piezoelectric materials is realized by the following four steps: 1. The famous Bouc–Wen model is utilized to present the input and output behaviors of piezoelectric materials; 2. System parameters of the Bouc–Wen model that describe the characteristics of piezoelectric materials are simultaneously identified with the particle swam optimization method; 3. Stability verification for the identified Bouc–Wen model; 4. A nonlinear feedback linearization control design is derived for the nano-scale positioning design of the piezoelectric material, mathematically. One important contribution of this investigation is that the positioning error between the output displacement of the controlled piezoelectric materials and the desired trajectory in nano-scale level can be proven to converge to zero asymptotically, under the effect of the hysteresis.

Laminated piezoelectric transformer

Science.gov (United States)

Vazquez Carazo, Alfredo (Inventor)

2006-01-01

A laminated piezoelectric transformer is provided using the longitudinal vibration modes for step-up voltage conversion applications. The input portions are polarized to deform in a longitudinal plane and are bonded to an output portion. The deformation of the input portions is mechanically coupled to the output portion, which deforms in the same longitudinal direction relative to the input portion. The output portion is polarized in the thickness direction relative its electrodes, and piezoelectrically generates a stepped-up output voltage.

Piezoelectric energy harvesting from flow-induced vibration

International Nuclear Information System (INIS)

Wang, D-A; Ko, H-H

2010-01-01

A new piezoelectric energy harvester for harnessing energy from flow-induced vibration is developed. It converts flow energy into electrical energy by piezoelectric conversion with oscillation of a piezoelectric film. A finite element model is developed in order to estimate the generated voltage of the piezoelectric laminate subjected to a distributed load. Prototypes of the energy harvester are fabricated and tested. Experimental results show that an open circuit output voltage of 2.2 V pp and an instantaneous output power of 0.2 µW are generated when the excitation pressure oscillates with an amplitude of 1.196 kPa and a frequency of about 26 Hz. The solution of the generated voltage based on the finite element model agrees well with the experiments. Based on the finite element model, the effects of the piezoelectric film dimensions, the fluid pressure applied to the harvester and types of piezoelectric layer on the output voltage of the harvester can be investigated.

Piezoelectric ceramic-reinforced metal matrix composites

OpenAIRE

2004-01-01

Composite materials comprising piezoelectric ceramic particulates dispersed in a metal matrix are capable of vibration damping. When the piezoelectric ceramic particulates are subjected to strain, such as the strain experienced during vibration of the material, they generate an electrical voltage that is converted into Joule heat in the surrounding metal matrix, thereby dissipating the vibrational energy. The piezoelectric ceramic particulates may also act as reinforcements to improve the mec...

Characterization of Piezoelectric Energy Harvesting MEMS

Science.gov (United States)

2015-12-01

of previously fabricated MEMS piezoelectric energy harvesters and use the results to optimize an advanced finite element model to be used in...possibilities of using solar power and the piezoelectric effect to harvest energy [12]. The design goal was to develop an energy harvester with a resonant... The piezoelectric properties of AlN are also relatively constant over a wide range of temperatures [7]. AlN was further characterized

Large Format CMOS-based Detectors for Diffraction Studies

Science.gov (United States)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

Large Format CMOS-based Detectors for Diffraction Studies

International Nuclear Information System (INIS)

Thompson, A C; Westbrook, E M; Nix, J C; Achterkirchen, T G

2013-01-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

Transmission of wireless neural signals through a 0.18 µm CMOS low-power amplifier.

Science.gov (United States)

Gazziro, M; Braga, C F R; Moreira, D A; Carvalho, A C P L F; Rodrigues, J F; Navarro, J S; Ardila, J C M; Mioni, D P; Pessatti, M; Fabbro, P; Freewin, C; Saddow, S E

2015-01-01

In the field of Brain Machine Interfaces (BMI) researchers still are not able to produce clinically viable solutions that meet the requirements of long-term operation without the use of wires or batteries. Another problem is neural compatibility with the electrode probes. One of the possible ways of approaching these problems is the use of semiconductor biocompatible materials (silicon carbide) combined with an integrated circuit designed to operate with low power consumption. This paper describes a low-power neural signal amplifier chip, named Cortex, fabricated using 0.18 μm CMOS process technology with all electronics integrated in an area of 0.40 mm(2). The chip has 4 channels, total power consumption of only 144 μW, and is impedance matched to silicon carbide biocompatible electrodes.

Avalanche-mode silicon LEDs for monolithic optical coupling in CMOS technology

NARCIS (Netherlands)

Dutta, Satadal

2017-01-01

Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit (IC) technology is the most commercially successful platform in modern electronic and control systems. So called "smart power" technologies such as Bipolar CMOS DMOS (BCD), combine the computational power of CMOS with high voltage

Design of CMOS imaging system based on FPGA

Science.gov (United States)

Hu, Bo; Chen, Xiaolai

2017-10-01

In order to meet the needs of engineering applications for high dynamic range CMOS camera under the rolling shutter mode, a complete imaging system is designed based on the CMOS imaging sensor NSC1105. The paper decides CMOS+ADC+FPGA+Camera Link as processing architecture and introduces the design and implementation of the hardware system. As for camera software system, which consists of CMOS timing drive module, image acquisition module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The ISE 14.6 emulator ISim is used in the simulation of signals. The imaging experimental results show that the system exhibits a 1280*1024 pixel resolution, has a frame frequency of 25 fps and a dynamic range more than 120dB. The imaging quality of the system satisfies the requirement of the index.

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

Directory of Open Access Journals (Sweden)

Haitao Li

2016-12-01

Full Text Available Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

Piezoelectric power converter with bi-directional power transfer

DEFF Research Database (Denmark)

2014-01-01

The present invention relates to a bi-directional piezoelectric power converter com¬ prising a piezoelectric transformer. The piezoelectric transformer comprises an input electrode electrically coupled to a primary section of the piezoelectric transformer and an output electrode electrically...... coupled to an output section of the piezoelectric transformer to provide a transformer output signal. A bi-directional switching circuit is coupled between the output electrode and a DC or AC output voltage of the power converter. Forward and reverse current conducting periods of the bi......, a reverse current is conducted through the bi-directional switching circuit from the DC or AC output voltage to the output electrode to discharge the DC or AC output voltage and return power to the primary section of the piezoelectric transformer....

A self-powered piezoelectric energy harvesting interface circuit with efficiency-enhanced P-SSHI rectifier

Science.gov (United States)

Liu, Lianxi; Pang, Yanbo; Yuan, Wenzhi; Zhu, Zhangming; Yang, Yintang

2018-04-01

The key to self-powered technique is initiative to harvest energy from the surrounding environment. Harvesting energy from an ambient vibration source utilizing piezoelectrics emerged as a popular method. Efficient interface circuits become the main limitations of existing energy harvesting techniques. In this paper, an interface circuit for piezoelectric energy harvesting is presented. An active full bridge rectifier is adopted to improve the power efficiency by reducing the conduction loss on the rectifying path. A parallel synchronized switch harvesting on inductor (P-SSHI) technique is used to improve the power extraction capability from piezoelectric harvester, thereby trying to reach the theoretical maximum output power. An intermittent power management unit (IPMU) and an output capacitor-less low drop regulator (LDO) are also introduced. Active diodes (AD) instead of traditional passive ones are used to reduce the voltage loss over the rectifier, which results in a good power efficiency. The IPMU with hysteresis comparator ensures the interface circuit has a large transient output power by limiting the output voltage ranges from 2.2 to 2 V. The design is fabricated in a SMIC 0.18 μm CMOS technology. Simulation results show that the flipping efficiency of the P-SSHI circuit is over 80% with an off-chip inductor value of 820 μH. The output power the proposed rectifier can obtain is 44.4 μW, which is 6.7× improvement compared to the maximum output power of a traditional rectifier. Both the active diodes and the P-SSHI help to improve the output power of the proposed rectifier. LDO outputs a voltage of 1.8 V with the maximum 90% power efficiency. The proposed P-SSHI rectifier interface circuit can be self-powered without the need for additional power supply. Project supported by the National Natural Science Foundation of China (Nos. 61574103, U1709218) and the Key Research and Development Program of Shaanxi Province (No. 2017ZDXM-GY-006).

E-Beam Effects on CMOS Active Pixel Sensors

International Nuclear Information System (INIS)

Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

2011-01-01

Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

V-stack piezoelectric actuator

Science.gov (United States)

Ardelean, Emil V.; Clark, Robert L.

2001-07-01

Aeroelastic control of wings by means of a distributed, trailing-edge control surface is of interest with regards to maneuvers, gust alleviation, and flutter suppression. The use of high energy density, piezoelectric materials as motors provides an appealing solution to this problem. A comparative analysis of the state of the art actuators is currently being conducted. A new piezoelectric actuator design is presented. This actuator meets the requirements for trailing edge flap actuation in both stroke and force. It is compact, simple, sturdy, and leverages stroke geometrically with minimum force penalties while displaying linearity over a wide range of stroke. The V-Stack Piezoelectric Actuator, consists of a base, a lever, two piezoelectric stacks, and a pre-tensioning element. The work is performed alternately by the two stacks, placed on both sides of the lever. Pre-tensioning can be readily applied using a torque wrench, obviating the need for elastic elements and this is for the benefit of the stiffness of the actuator. The characteristics of the actuator are easily modified by changing the base or the stacks. A prototype was constructed and tested experimentally to validate the theoretical model.

An improved resonantly driven piezoelectric gas pump

International Nuclear Information System (INIS)

Wu, Yue; Liu, Yong; Liu, Jianfang; Jiao, Xiaoyang; Yang, Zhigang; Wang, Long

2013-01-01

Piezoelectric pumps have the potential to be used in a variety of applications, such as in air circulation and compression. However, piezoelectric membrane pumps do not have enough driving capacity, and the heat induced during the direct contact between the driving part and the gas medium cannot be dissipated smoothly. When the gas is blocked, the piezoelectric vibrator generates heat quickly, which may eventually lead to damage. Resonantly driven piezoelectric stack pumps have high performance but no price advantage. In this situation, a novel, resonantly driven piezoelectric gas pump with annular bimorph as the driver is presented. In the study, the working principle of the novel pump was analyzed, the vibration mechanics model was determined, and the displacement amplified theory was studied. The outcome indicates that the displacement amplification factor is related with the original displacement provided by the piezoelectric bimorph. In addition, the displacement amplification effect is related to the stiffness of the spring lamination, adjustment spring, and piezoelectric vibrator, as well as to the systematic damping factor and the driving frequency. The experimental prototypes of the proposed pump were designed, and the displacement amplification effect and gas output performance were measured. At 70 V of sinusoidal AC driving voltage, the improved pump amplified the piezoelectric vibrator displacement by 4.2 times, the maximum gas output flow rate reached 1685 ml/min, and the temperature of the bimorph remained normal after 2000 hours of operation when the gas medium was blocked.

Calculations for Piezoelectric Ultrasonic Transducers

DEFF Research Database (Denmark)

Jensen, Henrik

1986-01-01

Analysis of piezoelectric ultrasonic transducers implies a solution of a boundary value problem, for a boay which consists of different materials, including a piezoelectric part. The problem is dynamic at frequencies, where a typical wavelength is somewhat less than the size of the body. Radiation...

Bone-Inspired Spatially Specific Piezoelectricity Induces Bone Regeneration.

Science.gov (United States)

Yu, Peng; Ning, Chengyun; Zhang, Yu; Tan, Guoxin; Lin, Zefeng; Liu, Shaoxiang; Wang, Xiaolan; Yang, Haoqi; Li, Kang; Yi, Xin; Zhu, Ye; Mao, Chuanbin

2017-01-01

The extracellular matrix of bone can be pictured as a material made of parallel interspersed domains of fibrous piezoelectric collagenous materials and non-piezoelectric non-collagenous materials. To mimic this feature for enhanced bone regeneration, a material made of two parallel interspersed domains, with higher and lower piezoelectricity, respectively, is constructed to form microscale piezoelectric zones (MPZs). The MPZs are produced using a versatile and effective laser-irradiation technique in which K 0.5 Na 0.5 NbO 3 (KNN) ceramics are selectively irradiated to achieve microzone phase transitions. The phase structure of the laser-irradiated microzones is changed from a mixture of orthorhombic and tetragonal phases (with higher piezoelectricity) to a tetragonal dominant phase (with lower piezoelectricity). The microzoned piezoelectricity distribution results in spatially specific surface charge distribution, enabling the MPZs to bear bone-like microscale electric cues. Hence, the MPZs induce osteogenic differentiation of stem cells in vitro and bone regeneration in vivo even without being seeded with stem cells. The concept of mimicking the spatially specific piezoelectricity in bone will facilitate future research on the rational design of tissue regenerative materials.

Ferroelectric materials for piezoelectric actuators by optimal design

International Nuclear Information System (INIS)

Jayachandran, K.P.; Guedes, J.M.; Rodrigues, H.C.

2011-01-01

Research highlights: → Microstructure optimization of ferroelectric materials by stochastic optimization. → Polycrystalline ferroelectrics possess better piezo actuation than single crystals. → Randomness of the grain orientations would enhance the overall piezoelectricity. - Abstract: Optimization methods provide a systematic means of designing heterogeneous materials with tailored properties and microstructures focussing on a specific objective. An optimization procedure incorporating a continuum modeling is used in this work to identify the ideal orientation distribution of ferroelectrics (FEs) for application in piezoelectric actuators. Piezoelectric actuation is dictated primarily by the piezoelectric strain coefficients d iμ . Crystallographic orientation is inextricably related to the piezoelectric properties of FEs. This suggests that piezoelectric properties can be tailored by a proper choice of the parameters which control the orientation distribution. Nevertheless, this choice is complicated and it is impossible to analyze all possible combinations of the distribution parameters or the angles themselves. Stochastic optimization combined with a generalized Monte Carlo scheme is used to optimize the objective functions, the effective piezoelectric coefficients d 31 and d 15 . The procedure is applied to heterogeneous, polycrystalline, FE ceramics which are essentially an aggregate of variously oriented grains (crystallites). Global piezoelectric properties are calculated using the homogenization method at each grain configuration chosen by the optimization algorithm. Optimal design variables and microstructure that would generate polycrystalline configurations that multiply the macroscopic piezoelectricity are identified.

Energy harvesting from low frequency applications using piezoelectric materials

International Nuclear Information System (INIS)

Li, Huidong; Tian, Chuan; Deng, Z. Daniel

2014-01-01

In an effort to eliminate the replacement of the batteries of electronic devices that are difficult or impractical to service once deployed, harvesting energy from mechanical vibrations or impacts using piezoelectric materials has been researched over the last several decades. However, a majority of these applications have very low input frequencies. This presents a challenge for the researchers to optimize the energy output of piezoelectric energy harvesters, due to the relatively high elastic moduli of piezoelectric materials used to date. This paper reviews the current state of research on piezoelectric energy harvesting devices for low frequency (0–100 Hz) applications and the methods that have been developed to improve the power outputs of the piezoelectric energy harvesters. Various key aspects that contribute to the overall performance of a piezoelectric energy harvester are discussed, including geometries of the piezoelectric element, types of piezoelectric material used, techniques employed to match the resonance frequency of the piezoelectric element to input frequency of the host structure, and electronic circuits specifically designed for energy harvesters

Preisach model of hysteresis for the Piezoelectric Actuator Drive

DEFF Research Database (Denmark)

Zsurzsan, Tiberiu-Gabriel; Andersen, Michael A. E.; Zhang, Zhe

2015-01-01

The Piezoelectric Actuator Drive (PAD) is a precise piezoelectric motor generating high-torque rotary motion, which employs piezoelectric stack actuators in a wobblestyle actuation to generate rotation. The piezoelectric stacked ceramics used as the basis for motion in the motor suffer from...

Small Pixel Hybrid CMOS X-ray Detectors

Science.gov (United States)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

Polymer-ceramic piezoelectric composites (PZT)

International Nuclear Information System (INIS)

Bassora, L.A.; Eiras, J.A.

1992-01-01

Polymer-ceramic piezoelectric transducers, with 1-3 of connectivity were prepared with different concentration of ceramic material. Piezoelectric composites, with equal electromechanical coupling factor and acoustic impedance of one third from that ceramic transducer, were obtained when the fractionary volume of PZT reach 30%. (C.G.C.)

CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

Science.gov (United States)

Khan, Sherjeel M; Gumus, Abdurrahman; Nassar, Joanna M; Hussain, Muhammad M

2018-04-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CMOS serial link for fully duplexed data communication

Science.gov (United States)

Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

1995-04-01

This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

Polarization Stability of Amorphous Piezoelectric Polyimides

Science.gov (United States)

Park, C.; Ounaies, Z.; Su, J.; Smith, J. G., Jr.; Harrison, J. S.

2000-01-01

Amorphous polyimides containing polar functional groups have been synthesized and investigated for potential use as high temperature piezoelectric sensors. The thermal stability of the piezoelectric effect of one polyimide was evaluated as a function of various curing and poling conditions under dynamic and static thermal stimuli. First, the polymer samples were thermally cycled under strain by systematically increasing the maximum temperature from 50 C to 200 C while the piezoelectric strain coefficient was being measured. Second, the samples were isothermally aged at an elevated temperature in air, and the isothermal decay of the remanent polarization was measured at room temperature as a function of time. Both conventional and corona poling methods were evaluated. This material exhibited good thermal stability of the piezoelectric properties up to 100 C.

Piezoelectric Accelerometers Development

DEFF Research Database (Denmark)

Liu, Bin; Bang, Lisbet Fogh

1999-01-01

The paper describes the development of piezoelectric accelerometers using Finite Element (FE) approach. Brüel & Kjær Accelerometer Type 8325 is chosen as an example to illustrate the advanced accelerometer development procedure. The deviation between simulated results and measured results of Type...... 8325 are below 6%. It is proved that the specifications of the accelerometer can be effectively predicted using the FE method, especially when modifications of the accelerometer are required. The development process of piezoelectric accelerometers in Brüel & Kjær is becoming more efficient...

Piezoelectric accelerometeres development

DEFF Research Database (Denmark)

Liu, Bin

1999-01-01

The paper describes the development of piezoelectric accelerometers using Finite Element (FE) approach. Brüel & Kjær Accelerometer Type 8325 is chosen as an example to illustrate the advanced accelerometer development procedure. The deviation between simulated results and measured results of Type...... 8325 are below 6%. It is proved that the specifications of the accelerometer can be effectively predicted using the FE method, especially when modifications of the accelerometer are required. The development process of piezoelectric accelerometers in Brüel & Kjær is becoming more efficient....

Multimodal piezoelectric devices optimization for energy harvesting

Directory of Open Access Journals (Sweden)

G Acciani

2016-09-01

Full Text Available The use of the piezoelectric effect to convert ambient vibration into useful electrical energy constitutes one of the most studied areas in Energy Harvesting (EH research. This paper presents a typical cantilevered Energy Harvester device, which relates the electrical outputs to the vibration mode shape easily. The dynamic strain induced in the piezoceramic layer results in an alternating voltage output. The first six modes of frequencies and the deformation pattern of the beam are carried out basing on an eigenfrequency analysis conducted by the MEMS modules of the COMSOL Multiphysic® v3.5a to perform the Finite Element Analysis of the model. Subsequently, the piezoelectric material is cut around the inflection points to minimize the voltage cancellation effect occurring when the sign changes in the material. This study shows that the voltage produced by the device, increases in as the dimensions of the cuts vary in the piezoelectric layer. Such voltage reaches the optimum amount of piezoelectric material and cuts positioning. This proves that the optimized piezoelectric layer is 16% more efficient than the whole piezoelectric layer.

Decal electronics for printed high performance cmos electronic systems

KAUST Repository

Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

2017-01-01

High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

Data.gov (United States)

Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

CMOS Compressed Imaging by Random Convolution

OpenAIRE

Jacques, Laurent; Vandergheynst, Pierre; Bibet, Alexandre; Majidzadeh, Vahid; Schmid, Alexandre; Leblebici, Yusuf

2009-01-01

We present a CMOS imager with built-in capability to perform Compressed Sensing. The adopted sensing strategy is the random Convolution due to J. Romberg. It is achieved by a shift register set in a pseudo-random configuration. It acts as a convolutive filter on the imager focal plane, the current issued from each CMOS pixel undergoing a pseudo-random redirection controlled by each component of the filter sequence. A pseudo-random triggering of the ADC reading is finally applied to comp...

Shear wave propagation in piezoelectric-piezoelectric composite layered structure

Directory of Open Access Journals (Sweden)

Anshu Mli Gaur

Full Text Available The propagation behavior of shear wave in piezoelectric composite structure is investigated by two layer model presented in this approach. The composite structure comprises of piezoelectric layers of two different materials bonded alternatively. Dispersion equations are derived for propagation along the direction normal to the layering and in direction of layering. It has been revealed that thickness and elastic constants have significant influence on propagation behavior of shear wave. The phase velocity and wave number is numerically calculated for alternative layer of Polyvinylidene Difluoride (PVDF and Lead Zirconate Titanate (PZT-5H in composite layered structure. The analysis carried out in this paper evaluates the effect of volume fraction on the phase velocity of shear wave.

The challenge of sCMOS image sensor technology to EMCCD

Science.gov (United States)

Chang, Weijing; Dai, Fang; Na, Qiyue

2018-02-01

In the field of low illumination image sensor, the noise of the latest scientific-grade CMOS image sensor is close to EMCCD, and the industry thinks it has the potential to compete and even replace EMCCD. Therefore we selected several typical sCMOS and EMCCD image sensors and cameras to compare their performance parameters. The results show that the signal-to-noise ratio of sCMOS is close to EMCCD, and the other parameters are superior. But signal-to-noise ratio is very important for low illumination imaging, and the actual imaging results of sCMOS is not ideal. EMCCD is still the first choice in the high-performance application field.

A Capacitance-Based Methodology for the Estimation of Piezoelectric Coefficients of Poled Piezoelectric Materials

KAUST Repository

Al Ahmad, Mahmoud

2010-10-04

A methodology is proposed to estimate the piezoelectric coefficients of bulk piezoelectric materials using simple capacitance measurements. The extracted values of d33 and d31 from the capacitance measurements were 506 pC/N and 247 pC/N, respectively. The d33 value is in agreement with that obtained from the Berlincourt method, which gave a d33 value of 500 pC/N. In addition, the d31 value is in agreement with the value obtained from the optical method, which gave a d 31 value of 223 pC/V. These results suggest that the proposed method is a viable way to quickly estimate piezoelectric coefficients of bulk unclamped samples. © 2010 The Electrochemical Society.

Self-oscillating loop based piezoelectric power converter

DEFF Research Database (Denmark)

2013-01-01

The present invention relates to a piezoelectric power converter comprising an input driver electrically coupled directly to an input or primary electrode of the piezoelectric transformer without any intervening series or parallel inductor. A feedback loop is operatively coupled between an output......- oscillation loop within a zero-voltage-switching (ZVS) operation range of the piezoelectric transformer....

Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

Piezoelectric Energy Harvesting Solutions

Science.gov (United States)

Caliò, Renato; Rongala, Udaya Bhaskar; Camboni, Domenico; Milazzo, Mario; Stefanini, Cesare; de Petris, Gianluca; Oddo, Calogero Maria

2014-01-01

This paper reviews the state of the art in piezoelectric energy harvesting. It presents the basics of piezoelectricity and discusses materials choice. The work places emphasis on material operating modes and device configurations, from resonant to non-resonant devices and also to rotational solutions. The reviewed literature is compared based on power density and bandwidth. Lastly, the question of power conversion is addressed by reviewing various circuit solutions. PMID:24618725

Variationen und ihre Kompensation in CMOS Digitalschaltungen

OpenAIRE

Baumann, Thomas

2010-01-01

Variationen bei der Herstellung und während des Betriebs von CMOS Schaltungen beeinflussen deren Geschwindigkeit und erschweren die Verifikation der in der Spezifikation zugesicherten Eigenschaften. In dieser Arbeit wird eine abstraktionsebenenübergreifende Vorgehensweise zur Abschätzung des Einflusses von Prozess- und betriebsbedingten Umgebungsvariationen auf die Geschwindigkeit einer Schaltung vorgestellt. Neben Untersuchungen der Laufzeitsensitivität in low-power CMOS Technologien von...

CMOS Image Sensor with a Built-in Lane Detector

Directory of Open Access Journals (Sweden)

Li-Chen Fu

2009-03-01

Full Text Available This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC or Digital Signal Processor (DSP, the proposed imager, without extra Analog to Digital Converter (ADC circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 x 2,389.8 mm, and the package uses 40 pin Dual-In-Package (DIP. The pixel cell size is 18.45 x 21.8 mm and the core size of photodiode is 12.45 x 9.6 mm; the resulting fill factor is 29.7%.

CMOS Image Sensor with a Built-in Lane Detector.

Science.gov (United States)

Hsiao, Pei-Yung; Cheng, Hsien-Chein; Huang, Shih-Shinh; Fu, Li-Chen

2009-01-01

This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%.

CMOS Integrated Carbon Nanotube Sensor

International Nuclear Information System (INIS)

Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

2009-01-01

Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

CMOS analog circuit design

CERN Document Server

Allen, Phillip E

1987-01-01

This text presents the principles and techniques for designing analog circuits to be implemented in a CMOS technology. The level is appropriate for seniors and graduate students familiar with basic electronics, including biasing, modeling, circuit analysis, and some familiarity with frequency response. Students learn the methodology of analog integrated circuit design through a hierarchically-oriented approach to the subject that provides thorough background and practical guidance for designing CMOS analog circuits, including modeling, simulation, and testing. The authors' vast industrial experience and knowledge is reflected in the circuits, techniques, and principles presented. They even identify the many common pitfalls that lie in the path of the beginning designer--expert advice from veteran designers. The text mixes the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, providing the perfect balance.

CMOS pixel development for the ATLAS experiment at HL-LHC

CERN Document Server

Rimoldi, Marco; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages, high resistivity wafers for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R$\\&$D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this presentation the challenges for the usage of CMOS pixel...

Characterization of active CMOS sensors for capacitively coupled pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

2015-07-01

Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

Peritubular dentin lacks piezoelectricity.

Science.gov (United States)

Habelitz, S; Rodriguez, B J; Marshall, S J; Marshall, G W; Kalinin, S V; Gruverman, A

2007-09-01

Dentin is a mesenchymal tissue, and, as such, is based on a collagenous matrix that is reinforced by apatite mineral. Collagen fibrils show piezoelectricity, a phenomenon that is used by piezoresponse force microscopy (PFM) to obtain high-resolution images. We applied PFM to image human dentin with 10-nm resolution, and to test the hypothesis that zones of piezoactivity, indicating the presence of collagen fibrils, can be distinguished in dentin. Piezoelectricity was observed by PFM in the dentin intertubular matrix, while the peritubular dentin remained without response. High-resolution imaging of chemically treated intertubular dentin attributed the piezoelectric effect to individual collagen fibrils that differed in the signal strength, depending on the fibril orientation. This study supports the hypothesis that peritubular dentin is a non-collagenous tissue and is thus an exception among mineralized tissues that derive from the mesenchyme.

Nanoscans of piezoelectric activity using an atomic force microscope

International Nuclear Information System (INIS)

Zheng, Z.; Guy, I.L.; Butcher, K.S.A.; Tansley, T.L.

2002-01-01

Full text: Any crystal which lacks a centre of symmetry is piezoelectric. This includes all of the ferroelectric crystals used in photonics and virtually all compound semiconductors. Such crystals, when grown in thin film form invariably exist in a strained state and thus possess internal piezoelectric fields which can affect their electronic properties. A knowledge of the piezoelectric properties of such crystals is thus important in understanding how they behave in practical devices. It also provides a tool for analysing the crystal structure of such materials. Using an atomic force microscope (AFM) as a probe of piezoelectric activity allows the study of variations in crystal structure on a nanoscale. The AFM piezoelectric technique has been used by several groups to study structures of ceramic materials with large piezoelectric coefficients, intended for applications in piezoelectric actuators. In the AFM method, a driving signal of a few volts at a frequency well below the AFM tip resonance, is applied to a sample of the material mounted in the AFM. This voltage causes the sample dimensions to change in ways determined by the piezoelectric properties of the sample. The AFM signal thus contains the normal surface profile information and an additional component generated by the piezoelectric vibrations of the sample. A lockin amplifier is used to separate the piezoelectric signal from the normal AFM surface profile signal. The result is the simultaneous acquisition of the surface profile and a piezoelectric map of the surface of the material under study. We will present results showing the results of such measurements in materials such as lithium niobate and gallium nitride. These materials have piezoelectric coefficients which are much lower than those of materials to which the technique has normally been applied

Long term ionization response of several BiCMOS VLSIC technologies

International Nuclear Information System (INIS)

Pease, R.L.; Combs, W.; Clark, S.

1992-01-01

BiCMOS is emerging as a strong competitor to CMOS for gate arrays and memories because of its performance advantages for the same feature size. In this paper, the authors examine the long term ionization response of five BiCMOS technologies by characterizing test structures which emphasize the various failure modes of CMOS and bipolar. The primary failure modes are found to be associated with the recessed field oxide isolation; edge leakage in the n channel MOSFETs and buried layer to buried layer leakage in the bipolar. The ionization failure thresholds for worst case bias were in the range of 5-20 Krad(Si) for both failure modes in all five technologies

Enhanced piezoelectricity of monolayer phosphorene oxides: a theoretical study.

Science.gov (United States)

Yin, Huabing; Zheng, Guang-Ping; Gao, Jingwei; Wang, Yuanxu; Ma, Yuchen

2017-10-18

Two-dimensional (2D) piezoelectric materials have potential applications in miniaturized sensors and energy conversion devices. In this work, using first-principles simulations at different scales, we systematically study the electronic structures and piezoelectricity of a series of 2D monolayer phosphorene oxides (POs). Our calculations show that the monolayer POs have tunable band gaps along with remarkable piezoelectric properties. The calculated piezoelectric coefficient d 11 of 54 pm V -1 in POs is much larger than those of 2D transition metal dichalcogenide monolayers and the widely used bulk α-quartz and AlN, and almost reaches the level of the piezoelectric effect in recently discovered 2D GeS. Furthermore, two other considerable piezoelectric coefficients, i.e., d 31 and d 26 with values of -10 pm V -1 and 21 pm V -1 , respectively, are predicted in some monolayer POs. We also examine the correlation between the piezoelectric coefficients and energy stability. The enhancement of piezoelectricity for monolayer phosphorene by oxidation will broaden the applications of phosphorene and phosphorene derivatives in nano-sized electronic and piezotronic devices.

Piezoelectricity

CERN Document Server

Lubitz, Karl

2008-01-01

Piezoelectric materials play a key role in an innovative market. Advances in applications derive from new materials and their development, as well as to new market requirements. This report elucidates these developments by a broad spectrum of examples, comprising ultrasound in medicine and defence industry, and frequency control.

First principle leakage current reduction technique for CMOS devices

CSIR Research Space (South Africa)

Tsague, HD

2015-12-01

Full Text Available This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations...

Giant piezoelectricity on Si for hyperactive MEMS.

Science.gov (United States)

Baek, S H; Park, J; Kim, D M; Aksyuk, V A; Das, R R; Bu, S D; Felker, D A; Lettieri, J; Vaithyanathan, V; Bharadwaja, S S N; Bassiri-Gharb, N; Chen, Y B; Sun, H P; Folkman, C M; Jang, H W; Kreft, D J; Streiffer, S K; Ramesh, R; Pan, X Q; Trolier-McKinstry, S; Schlom, D G; Rzchowski, M S; Blick, R H; Eom, C B

2011-11-18

Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO(3) template layer with superior piezoelectric coefficients (e(31,f) = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

Science.gov (United States)

Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

2015-06-29

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

Observation of piezoelectricity in free-standing monolayer MoS₂.

Science.gov (United States)

Zhu, Hanyu; Wang, Yuan; Xiao, Jun; Liu, Ming; Xiong, Shaomin; Wong, Zi Jing; Ye, Ziliang; Ye, Yu; Yin, Xiaobo; Zhang, Xiang

2015-02-01

Piezoelectricity allows precise and robust conversion between electricity and mechanical force, and arises from the broken inversion symmetry in the atomic structure. Reducing the dimensionality of bulk materials has been suggested to enhance piezoelectricity. However, when the thickness of a material approaches a single molecular layer, the large surface energy can cause piezoelectric structures to be thermodynamically unstable. Transition-metal dichalcogenides can retain their atomic structures down to the single-layer limit without lattice reconstruction, even under ambient conditions. Recent calculations have predicted the existence of piezoelectricity in these two-dimensional crystals due to their broken inversion symmetry. Here, we report experimental evidence of piezoelectricity in a free-standing single layer of molybdenum disulphide (MoS₂) and a measured piezoelectric coefficient of e₁₁ = 2.9 × 10(-10) C m(-1). The measurement of the intrinsic piezoelectricity in such free-standing crystals is free from substrate effects such as doping and parasitic charges. We observed a finite and zero piezoelectric response in MoS₂ in odd and even number of layers, respectively, in sharp contrast to bulk piezoelectric materials. This oscillation is due to the breaking and recovery of the inversion symmetry of the two-dimensional crystal. Through the angular dependence of electromechanical coupling, we determined the two-dimensional crystal orientation. The piezoelectricity discovered in this single molecular membrane promises new applications in low-power logic switches for computing and ultrasensitive biological sensors scaled down to a single atomic unit cell.

Piezoelectric nanomaterials for biomedical applications

CERN Document Server

Menciassi, Arianna

2012-01-01

Nanoscale structures and materials have been explored in many biological applications because of their novel and impressive physical and chemical properties. Such properties allow remarkable opportunities to study and interact with complex biological processes. This book analyses the state of the art of piezoelectric nanomaterials and introduces their applications in the biomedical field. Despite their impressive potentials, piezoelectric materials have not yet received significant attention for bio-applications. This book shows that the exploitation of piezoelectric nanoparticles in nanomedicine is possible and realistic, and their impressive physical properties can be useful for several applications, ranging from sensors and transducers for the detection of biomolecules to “sensible” substrates for tissue engineering or cell stimulation.

Development of piezoelectric composites for transducers

Science.gov (United States)

Safari, A.

1994-07-01

For the past decade and a half, many different types of piezoelectric ceramic-polymer composites have been developed intended for transducer applications. These diphasic composites are prepared from non-active polymer, such as epoxy, and piezoelectric ceramic, such as PZT, in the form of filler powders, elongated fibers, multilayer and more complex three-dimensional structures. For the last four years, most of the efforts have been given to producing large area and fine scale PZT fiber composites. In this paper, processing of piezoelectric ceramic-polymer composites with various connectivity patterns are reviewed. Development of fine scale piezoelectric composites by lost mold, injection molding and the relic method are described. Research activities of different groups for preparing large area piezocomposites for hydrophone and actuator applications are briefly reviewed. Initial development of electrostrictive ceramics and composites are also

Vibrations of thin piezoelectric shallow shells: Two-dimensional ...

Indian Academy of Sciences (India)

R. Narasimhan (Krishtel eMaging) 1461 1996 Oct 15 13:05:22

In this paper we consider the eigenvalue problem for piezoelectric shallow shells and we show that, as the thickness of the shell goes to zero, the eigensolutions of the three-dimensional piezoelectric shells converge to the eigensolutions of a two- dimensional eigenvalue problem. Keywords. Vibrations; piezoelectricity ...

Anomalous piezoelectricity in two-dimensional graphene nitride nanosheets.

Science.gov (United States)

Zelisko, Matthew; Hanlumyuang, Yuranan; Yang, Shubin; Liu, Yuanming; Lei, Chihou; Li, Jiangyu; Ajayan, Pulickel M; Sharma, Pradeep

2014-06-27

Piezoelectricity is a unique property of materials that permits the conversion of mechanical stimuli into electrical and vice versa. On the basis of crystal symmetry considerations, pristine carbon nitride (C3N4) in its various forms is non-piezoelectric. Here we find clear evidence via piezoresponse force microscopy and quantum mechanical calculations that both atomically thin and layered graphitic carbon nitride, or graphene nitride, nanosheets exhibit anomalous piezoelectricity. Insights from ab inito calculations indicate that the emergence of piezoelectricity in this material is due to the fact that a stable phase of graphene nitride nanosheet is riddled with regularly spaced triangular holes. These non-centrosymmetric pores, and the universal presence of flexoelectricity in all dielectrics, lead to the manifestation of the apparent and experimentally verified piezoelectric response. Quantitatively, an e11 piezoelectric coefficient of 0.758 C m(-2) is predicted for C3N4 superlattice, significantly larger than that of the commonly compared α-quartz.

Finite element analysis of piezoelectric materials

International Nuclear Information System (INIS)

Lowrie, F.; Stewart, M.; Cain, M.; Gee, M.

1999-01-01

This guide is intended to help people wanting to do finite element analysis of piezoelectric materials by answering some of the questions that are peculiar to piezoelectric materials. The document is not intended as a complete beginners guide for finite element analysis in general as this is better dealt with by the individual software producers. The guide is based around the commercial package ANSYS as this is a popular package amongst piezoelectric material users, however much of the information will still be useful to users of other finite element codes. (author)

Ion traps fabricated in a CMOS foundry

Energy Technology Data Exchange (ETDEWEB)

Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

CMOS front ends for millimeter wave wireless communication systems

CERN Document Server

Deferm, Noël

2015-01-01

This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

Applications of piezoelectric materials in oilfield services.

Science.gov (United States)

Goujon, Nicolas; Hori, Hiroshi; Liang, Kenneth K; Sinha, Bikash K

2012-09-01

Piezoelectric materials are used in many applications in the oilfield services industry. Four illustrative examples are given in this paper: marine seismic survey, precision pressure measurement, sonic logging-while-drilling, and ultrasonic bore-hole imaging. In marine seismics, piezoelectric hydrophones are deployed on a massive scale in a relatively benign environment. Hence, unit cost and device reliability are major considerations. The remaining three applications take place downhole in a characteristically harsh environment with high temperature and high pressure among other factors. The number of piezoelectric devices involved is generally small but otherwise highly valued. The selection of piezoelectric materials is limited, and the devices have to be engineered to withstand the operating conditions. With the global demand for energy increasing in the foreseeable future, the search for hydrocarbon resources is reaching into deeper and hotter wells. There is, therefore, a continuing and pressing need for high-temperature and high-coupling piezoelectric materials.

Merits of CMOS/SIMOX technology for low-voltage SRAM macros

CERN Document Server

Kumagai, K; Yamada, T; Nakamura, H; Onishi, H; Matsubara, Y; Imai, K; Kurosawa, S

1999-01-01

A 128-kbit SRAM (static random access memory) macro with the 0.35 mu m FD (fully-depleted) CMOS/SIMOX (separation by implantation of oxygen) technology has been developed to demonstrate the merits of that technology for low-voltage $9 applications. Its access time at Vdd =1.5 V was comparable with that obtained with the 0.35 mu m standard bulk CMOS technology at Vdd=3.3 V, due to the combination of the small S/D capacitance and the small back-bias effect. As the $9 yield of the 128-kbit SRAM macros was almost the same as the standard bulk CMOS technology, the manufacturability of the 0.35 mu m FD-CMOS/SIMOX technology has also been demonstrated. (7 refs).

Hybrid Josephson-CMOS Memory in Advanced Technologies and Larger Sizes

International Nuclear Information System (INIS)

Liu, Q; Van Duzer, T; Fujiwara, K; Yoshikawa, N

2006-01-01

Recent progress on demonstrating components of the 64 kb Josephson-CMOS hybrid memory has encouraged exploration of the advancement possible with use of advanced technologies for both the Josephson and CMOS parts of the memory, as well as considerations of the effect of memory size on access time and power dissipation. The simulations to be reported depend on the use of an approximate model for 90 nm CMOS at 4 K. This model is an extension of the one we developed for 0.25 μm CMOS and have already verified. For the Josephson parts, we have chosen 20 kA/cm 2 technology, which was recently demonstrated. The calculations show that power dissipation and access time increase rather slowly with increasing size of the memory

CMOS Imaging Sensor Technology for Aerial Mapping Cameras

Science.gov (United States)

Neumann, Klaus; Welzenbach, Martin; Timm, Martin

2016-06-01

In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

NARCIS (Netherlands)

Patra, B; Incandela, R.M.; van Dijk, J.P.G.; Homulle, H.A.R.; Song, Lin; Shahmohammadi, M.; Staszewski, R.B.; Vladimirescu, A.; Babaie, M.; Sebastiano, F.; Charbon, E.E.E.

2018-01-01

A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising

From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

DEFF Research Database (Denmark)

Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.

2008-01-01

This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

A review on one dimensional perovskite nanocrystals for piezoelectric applications

Directory of Open Access Journals (Sweden)

Li-Qian Cheng

2016-03-01

Full Text Available In recent years, one-dimensional piezoelectric nanomaterials have become a research topic of interest because of their special morphology and excellent piezoelectric properties. This article presents a short review on one dimensional perovskite piezoelectric materials in different systems including Pb(Zr,TiO3, BaTiO3 and (K,NaNbO3 (KNN. We emphasize KNN as a promising lead-free piezoelectric compound with a high Curie temperature and high piezoelectric properties and describe its synthesis and characterization. In particular, details are presented for nanoscale piezoelectricity characterization of a single KNN nanocrystal by piezoresponse force microscopy. Finally, this review describes recent progress in applications based on one dimensional piezoelectric nanostructures with a focus on energy harvesting composite materials.

Structured Piezoelectric Composites : Materials and Applications

NARCIS (Netherlands)

Van den Ende, D.A.

2012-01-01

The piezoelectric effect, which causes a material to generate a voltage when it deforms, is very suitable for making integrated sensors, and (micro-) generators. However, conventional piezoelectric materials are either brittle ceramics or certain polymers with a low thermal stability, which limits

Piezoelectrically Actuated Robotic System for MRI-Guided Prostate Percutaneous Therapy

Science.gov (United States)

Su, Hao; Shang, Weijian; Cole, Gregory; Li, Gang; Harrington, Kevin; Camilo, Alexander; Tokuda, Junichi; Tempany, Clare M.; Hata, Nobuhiko; Fischer, Gregory S.

2014-01-01

This paper presents a fully-actuated robotic system for percutaneous prostate therapy under continuously acquired live magnetic resonance imaging (MRI) guidance. The system is composed of modular hardware and software to support the surgical workflow of intra-operative MRI-guided surgical procedures. We present the development of a 6-degree-of-freedom (DOF) needle placement robot for transperineal prostate interventions. The robot consists of a 3-DOF needle driver module and a 3-DOF Cartesian motion module. The needle driver provides needle cannula translation and rotation (2-DOF) and stylet translation (1-DOF). A custom robot controller consisting of multiple piezoelectric motor drivers provides precision closed-loop control of piezoelectric motors and enables simultaneous robot motion and MR imaging. The developed modular robot control interface software performs image-based registration, kinematics calculation, and exchanges robot commands and coordinates between the navigation software and the robot controller with a new implementation of the open network communication protocol OpenIGTLink. Comprehensive compatibility of the robot is evaluated inside a 3-Tesla MRI scanner using standard imaging sequences and the signal-to-noise ratio (SNR) loss is limited to 15%. The image deterioration due to the present and motion of robot demonstrates unobservable image interference. Twenty-five targeted needle placements inside gelatin phantoms utilizing an 18-gauge ceramic needle demonstrated 0.87 mm root mean square (RMS) error in 3D Euclidean distance based on MRI volume segmentation of the image-guided robotic needle placement procedure. PMID:26412962

Counting neutrons with a commercial S-CMOS camera

Science.gov (United States)

Patrick, Van Esch; Paolo, Mutti; Emilio, Ruiz-Martinez; Estefania, Abad Garcia; Marita, Mosconi; Jon, Ortega

2018-01-01

It is possible to detect individual flashes from thermal neutron impacts in a ZnS scintillator using a CMOS camera looking at the scintillator screen, and off line image processing. Some preliminary results indicated that the efficiency of recognition could be improved by optimizing the light collection and the image processing. We will report on this ongoing work which is a result from the collaboration between ESS Bilbao and the ILL. The main progress to be reported is situated on the level of the on-line treatment of the imaging data. If this technology is to work on a genuine scientific instrument, it is necessary that all the processing happens on line, to avoid the accumulation of large amounts of image data to be analyzed off line. An FPGA-based real-time full-deca mode VME-compatible CameraLink board has been developed at the SCI of the ILL, which is able to manage the data flow from the camera and convert it in a reasonable "neutron impact" data flow like from a usual neutron counting detector. The main challenge of the endeavor is the optical light collection from the scintillator. While the light yield of a ZnS scintillator is a priori rather important, the amount of light collected with a photographic objective is small. Different scintillators and different light collection techniques have been experimented with and results will be shown for different setups improving upon the light recuperation on the camera sensor. Improvements on the algorithm side will also be presented. The algorithms have to be at the same time efficient in their recognition of neutron signals, in their rejection of noise signals (internal and external to the camera) but also have to be simple enough to be easily implemented in the FPGA. The path from the idea of detecting individual neutron impacts with a CMOS camera to a practical working instrument detector is challenging, and in this paper we will give an overview of the part of the road that has already been walked.

Counting neutrons with a commercial S-CMOS camera

Directory of Open Access Journals (Sweden)

Patrick Van Esch

2018-01-01

Full Text Available It is possible to detect individual flashes from thermal neutron impacts in a ZnS scintillator using a CMOS camera looking at the scintillator screen, and off line image processing. Some preliminary results indicated that the efficiency of recognition could be improved by optimizing the light collection and the image processing. We will report on this ongoing work which is a result from the collaboration between ESS Bilbao and the ILL. The main progress to be reported is situated on the level of the on-line treatment of the imaging data. If this technology is to work on a genuine scientific instrument, it is necessary that all the processing happens on line, to avoid the accumulation of large amounts of image data to be analyzed off line. An FPGA-based real-time full-deca mode VME-compatible CameraLink board has been developed at the SCI of the ILL, which is able to manage the data flow from the camera and convert it in a reasonable “neutron impact” data flow like from a usual neutron counting detector. The main challenge of the endeavor is the optical light collection from the scintillator. While the light yield of a ZnS scintillator is a priori rather important, the amount of light collected with a photographic objective is small. Different scintillators and different light collection techniques have been experimented with and results will be shown for different setups improving upon the light recuperation on the camera sensor. Improvements on the algorithm side will also be presented. The algorithms have to be at the same time efficient in their recognition of neutron signals, in their rejection of noise signals (internal and external to the camera but also have to be simple enough to be easily implemented in the FPGA. The path from the idea of detecting individual neutron impacts with a CMOS camera to a practical working instrument detector is challenging, and in this paper we will give an overview of the part of the road that has

Analysis of active piezoelectric energy harvester

Directory of Open Access Journals (Sweden)

Yiliang CUI

2018-02-01

Full Text Available Most of the existing piezoelectric traps are designed for a narrow frequency range of vibration, but the surrounding environment has a very wide frequency range, and the frequency may also be subject to change, causing the problem of difficult to achieve energy capture or capture inefficiency. In order to solve problem, a new T-type piezoelectric cantilever is proposed as a capture energy structure in the paper. To begin with the aspects of structural design and circuit design, the static analysis, modal analysis and resonance analysis of the structure are carried out and the natural frequency and excitation frequency of the device are analyzed. The design and calculation of the power consumption and the loss of the components of the circuit are analyzed by the simulation and verification of the active capture energy circuit, and the active and passive techniques are compared and analyzed, the simulation of the active capture circuit is verified by analyzing the power consumption of the circuit and the maximum power obtained by the active technology is 5 times of that of the passive technology. And then the voltage-controlled active boundary control method can be used for interface circuit design, taking the initiative to use each piezoelectric transduction cycle triggered by the electrical boundary conditions to effectively increase the input piezoelectric pump energy, and then increase output power. The way of utilizing the active trapping of piezoelectric materials is innovated, which has a positive effect on the development of piezoelectric traps.

Dielectric loss against piezoelectric power harvesting

Science.gov (United States)

Liang, Junrui; Shu-Hung Chung, Henry; Liao, Wei-Hsin

2014-09-01

Piezoelectricity is one of the most popular electromechanical transduction mechanisms for constructing kinetic energy harvesting systems. When a standard energy harvesting (SEH) interface circuit, i.e., bridge rectifier plus filter capacitor, is utilized for collecting piezoelectric power, the previous literature showed that the power conversion can be well predicted without much consideration for the effect of dielectric loss. Yet, as the conversion power gets higher by adopting power-boosting interface circuits, such as synchronized switch harvesting on inductor (SSHI), the neglect of dielectric loss might give rise to deviation in harvested power estimation. Given the continuous progress on power-boosting interface circuits, the role of dielectric loss in practical piezoelectric energy harvesting (PEH) systems should receive attention with better evaluation. Based on the integrated equivalent impedance network model, this fast track communication provides a comprehensive study on the susceptibility of harvested power in PEH systems under different conditions. It shows that, dielectric loss always counteracts piezoelectric power harvesting by causing charge leakage across piezoelectric capacitance. In particular, taking corresponding ideal lossless cases as references, the counteractive effect might be aggravated under one of the five conditions: larger dielectric loss tangent, lower vibration frequency, further away from resonance, weaker electromechanical coupling, or using power-boosting interface circuit. These relationships are valuable for the study of PEH systems, as they not only help explain the role of dielectric loss in piezoelectric power harvesting, but also add complementary insights for material, structure, excitation, and circuit considerations towards holistic evaluation and design for practical PEH systems.

Dielectric loss against piezoelectric power harvesting

International Nuclear Information System (INIS)

Liang, Junrui; Shu-Hung Chung, Henry; Liao, Wei-Hsin

2014-01-01

Piezoelectricity is one of the most popular electromechanical transduction mechanisms for constructing kinetic energy harvesting systems. When a standard energy harvesting (SEH) interface circuit, i.e., bridge rectifier plus filter capacitor, is utilized for collecting piezoelectric power, the previous literature showed that the power conversion can be well predicted without much consideration for the effect of dielectric loss. Yet, as the conversion power gets higher by adopting power-boosting interface circuits, such as synchronized switch harvesting on inductor (SSHI), the neglect of dielectric loss might give rise to deviation in harvested power estimation. Given the continuous progress on power-boosting interface circuits, the role of dielectric loss in practical piezoelectric energy harvesting (PEH) systems should receive attention with better evaluation. Based on the integrated equivalent impedance network model, this fast track communication provides a comprehensive study on the susceptibility of harvested power in PEH systems under different conditions. It shows that, dielectric loss always counteracts piezoelectric power harvesting by causing charge leakage across piezoelectric capacitance. In particular, taking corresponding ideal lossless cases as references, the counteractive effect might be aggravated under one of the five conditions: larger dielectric loss tangent, lower vibration frequency, further away from resonance, weaker electromechanical coupling, or using power-boosting interface circuit. These relationships are valuable for the study of PEH systems, as they not only help explain the role of dielectric loss in piezoelectric power harvesting, but also add complementary insights for material, structure, excitation, and circuit considerations towards holistic evaluation and design for practical PEH systems. (fast track communications)

Radial-Electric-Field Piezoelectric Diaphragm Pumps

Science.gov (United States)

Bryant, Robert G.; Working, Dennis C.; Mossi, Karla; Castro, Nicholas D.; Mane, Pooma

2009-01-01

In a recently invented class of piezoelectric diaphragm pumps, the electrode patterns on the piezoelectric diaphragms are configured so that the electric fields in the diaphragms have symmetrical radial (along-the-surface) components in addition to through-the-thickness components. Previously, it was accepted in the piezoelectric-transducer art that in order to produce the out-of-plane bending displacement of a diaphragm needed for pumping, one must make the electric field asymmetrical through the thickness, typically by means of electrodes placed on only one side of the piezoelectric material. In the present invention, electrodes are placed on both sides and patterned so as to produce substantial radial as well as through-the-thickness components. Moreover, unlike in the prior art, the electric field can be symmetrical through the thickness. Tests have shown in a given diaphragm that an electrode configuration according to this invention produces more displacement than does a conventional one-sided electrode pattern. The invention admits of numerous variations characterized by various degrees of complexity. Figure 1 is a simplified depiction of a basic version. As in other piezoelectric diaphragm pumps of similar basic design, the prime mover is a piezoelectric diaphragm. Application of a suitable voltage to the electrodes on the diaphragm causes it to undergo out-of-plane bending. The bending displacement pushes a fluid out of, or pulls the fluid into, a chamber bounded partly by the diaphragm. Also as in other diaphragm pumps in general, check valves ensure that the fluid flows only in through one port and only out through another port.

CMOS Image Sensors: Electronic Camera On A Chip

Science.gov (United States)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

Phase structure and piezoelectric properties of Li-modified NKLN lead-free piezoelectric ceramics

International Nuclear Information System (INIS)

Kim, Sin-Woong; Lee, Sung-Chan; Kim, Min-Soo; Jeong, Soon-Jong; Kim, In-Sung; Song, Jae-Sung

2012-01-01

Through the low-temperature sintering method, a sintered body with excellent characteristics was produced in an eco-friendly niobate-based piezoelectric ceramic, whose application was low in expectation due to poor sinterability. Li 2 CO 3 was added in excess to (Na 0.49 K 0.45 Li 0.06 )NbO 3 , and ceramics were manufactured using a commercial sintering method. Then, the sinterability and the piezoelectric properties of the specimens containing varying amounts of Li 2 CO 3 were investigated. The microstructure demonstrated the typical abnormal grain growth tendencies with the addition of Li 2 CO 3 , and this was explained through changes in the critical driving force in the interface reaction-controlled nucleation and growth theory. When the specimen had been sintered at 1000 .deg. C for 4 hours in air after the addition of 1.5 mol% Li 2 CO 3 , the sintered body showed outstanding characteristics with a piezoelectric coefficient of 180 pC/N, an electromechanical coupling coefficient of 0.32, and a dielectric constant of 975. These results showed that eco-friendly niobate-based ceramics, whose use in applications was expected to be difficult in spite of their excellent properties, could be used to produce piezoelectric materials with outstanding properties through a commercial low-temperature sintering method using additives.

Phase structure and piezoelectric properties of Li-modified NKLN lead-free piezoelectric ceramics

Energy Technology Data Exchange (ETDEWEB)

Kim, Sin-Woong; Lee, Sung-Chan; Kim, Min-Soo; Jeong, Soon-Jong; Kim, In-Sung; Song, Jae-Sung [Korea Electrotechnology Research Institute, Changwon (Korea, Republic of)

2012-09-15

Through the low-temperature sintering method, a sintered body with excellent characteristics was produced in an eco-friendly niobate-based piezoelectric ceramic, whose application was low in expectation due to poor sinterability. Li{sub 2}CO{sub 3} was added in excess to (Na{sub 0.49}K{sub 0.45}Li{sub 0.06})NbO{sub 3}, and ceramics were manufactured using a commercial sintering method. Then, the sinterability and the piezoelectric properties of the specimens containing varying amounts of Li{sub 2}CO{sub 3} were investigated. The microstructure demonstrated the typical abnormal grain growth tendencies with the addition of Li{sub 2}CO{sub 3}, and this was explained through changes in the critical driving force in the interface reaction-controlled nucleation and growth theory. When the specimen had been sintered at 1000 .deg. C for 4 hours in air after the addition of 1.5 mol% Li{sub 2}CO{sub 3}, the sintered body showed outstanding characteristics with a piezoelectric coefficient of 180 pC/N, an electromechanical coupling coefficient of 0.32, and a dielectric constant of 975. These results showed that eco-friendly niobate-based ceramics, whose use in applications was expected to be difficult in spite of their excellent properties, could be used to produce piezoelectric materials with outstanding properties through a commercial low-temperature sintering method using additives.

Development of High Performance Piezoelectric Polyimides

Science.gov (United States)

Simpson, Joycelyn O.; St.Clair, Terry L.; Welch, Sharon S.

1996-01-01

In this work a series of polyimides are investigated which exhibit a strong piezoelectric response and polarization stability at temperatures in excess of 100 C. This work was motivated by the need to develop piezoelectric sensors suitable for use in high temperature aerospace applications.

Vibrations of Thin Piezoelectric Shallow Shells

Indian Academy of Sciences (India)

Abstract. In this paper we consider the eigenvalue problem for piezoelectric shallow shells and we show that, as the thickness of the shell goes to zero, the eigensolutions of the three-dimensional piezoelectric shells converge to the eigensolutions of a two-dimensional eigenvalue problem.

CMOS image sensor-based immunodetection by refractive-index change.

Science.gov (United States)

Devadhasan, Jasmine P; Kim, Sanghyo

2012-01-01

A complementary metal oxide semiconductor (CMOS) image sensor is an intriguing technology for the development of a novel biosensor. Indeed, the CMOS image sensor mechanism concerning the detection of the antigen-antibody (Ag-Ab) interaction at the nanoscale has been ambiguous so far. To understand the mechanism, more extensive research has been necessary to achieve point-of-care diagnostic devices. This research has demonstrated a CMOS image sensor-based analysis of cardiovascular disease markers, such as C-reactive protein (CRP) and troponin I, Ag-Ab interactions on indium nanoparticle (InNP) substrates by simple photon count variation. The developed sensor is feasible to detect proteins even at a fg/mL concentration under ordinary room light. Possible mechanisms, such as dielectric constant and refractive-index changes, have been studied and proposed. A dramatic change in the refractive index after protein adsorption on an InNP substrate was observed to be a predominant factor involved in CMOS image sensor-based immunoassay.

Dielectric and piezoelectric properties of percolative three-phase piezoelectric polymer composites

Science.gov (United States)

Sundar, Udhay

Three-phase piezoelectric bulk composites were fabricated using a mix and cast method. The composites were comprised of lead zirconate titanate (PZT), aluminum (Al) and an epoxy matrix. The volume fraction of the PZT and Al were varied from 0.1 to 0.3 and 0.0 to 0.17, respectively. The influences of three entities on piezoelectric and dielectric properties: inclusion of an electrically conductive filler (Al), poling process (contact and Corona) and Al surface treatment, were observed. The piezoelectric strain coefficient, d33, effective dielectric constant, epsilon r, capacitance, C, and resistivity were measured and compared according to poling process, volume fraction of constituent phases and Al surface treatment. The maximum values of d33 were 3.475 and 1.0 pC/N for Corona and contact poled samples respectively, for samples with volume fractions of 0.40 and 0.13 of PZT and Al (surface treated) respectively. Also, the maximum dielectric constant for the surface treated Al samples was 411 for volume fractions of 0.40 and 0.13 for PZT and Al respectively. The percolation threshold was observed to occur at an Al volume fraction of 0.13. The composites achieved a percolated state for Al volume fractions >0.13 for both contact and corona poled samples. In addition, a comparative time study was conducted to examine the influence of surface treatment processing time of Al particles. The effectiveness of the surface treatment, sample morphology and composition was observed with the aid of SEM and EDS images. These images were correlated with piezoelectric and dielectric properties. PZT-epoxy-aluminum thick films (200 mum) were also fabricated using a two-step spin coat deposition and annealing method. The PZT volume fraction were varied from 0.2, 0.3 and 0.4, wherein the Aluminum volume fraction was varied from 0.1 to 0.17 for each PZT volume fraction, respectively. The two-step process included spin coating the first layer at 500 RPM for 30 seconds, and the second

Multilayer modal actuator-based piezoelectric transformers.

Science.gov (United States)

Huang, Yao-Tien; Wu, Wen-Jong; Wang, Yen-Chieh; Lee, Chih-Kung

2007-02-01

An innovative, multilayer piezoelectric transformer equipped with a full modal filtering input electrode is reported herein. This modal-shaped electrode, based on the orthogonal property of structural vibration modes, is characterized by full modal filtering to ensure that only the desired vibration mode is excited during operation. The newly developed piezoelectric transformer is comprised of three layers: a multilayered input layer, an insulation layer, and a single output layer. The electrode shape of the input layer is derived from its structural vibration modal shape, which takes advantage of the orthogonal property of the vibration modes to achieve a full modal filtering effect. The insulation layer possesses two functions: first, to couple the mechanical vibration energy between the input and output, and second, to provide electrical insulation between the two layers. To meet the two functions, a low temperature, co-fired ceramic (LTCC) was used to provide the high mechanical rigidity and high electrical insulation. It can be shown that this newly developed piezoelectric transformer has the advantage of possessing a more efficient energy transfer and a wider optimal working frequency range when compared to traditional piezoelectric transformers. A multilayer piezoelectric, transformer-based inverter applicable for use in LCD monitors or portable displays is presented as well.

Cylindrical Piezoelectric Fiber Composite Actuators

Science.gov (United States)

Allison, Sidney G.; Shams, Qamar A.; Fox, Robert L.

2008-01-01

The use of piezoelectric devices has become widespread since Pierre and Jacques Curie discovered the piezoelectric effect in 1880. Examples of current applications of piezoelectric devices include ultrasonic transducers, micro-positioning devices, buzzers, strain sensors, and clocks. The invention of such lightweight, relatively inexpensive piezoceramic-fiber-composite actuators as macro fiber composite (MFC) actuators has made it possible to obtain strains and displacements greater than those that could be generated by prior actuators based on monolithic piezoceramic sheet materials. MFC actuators are flat, flexible actuators designed for bonding to structures to apply or detect strains. Bonding multiple layers of MFC actuators together could increase force capability, but not strain or displacement capability. Cylindrical piezoelectric fiber composite (CPFC) actuators have been invented as alternatives to MFC actuators for applications in which greater forces and/or strains or displacements may be required. In essence, a CPFC actuator is an MFC or other piezoceramic fiber composite actuator fabricated in a cylindrical instead of its conventional flat shape. Cylindrical is used here in the general sense, encompassing shapes that can have circular, elliptical, rectangular or other cross-sectional shapes in the planes perpendicular to their longitudinal axes.

CMOS circuit design, layout and simulation

CERN Document Server

Baker, R Jacob

2010-01-01

The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

Photothermoacoustic effect in solids with piezoelectric detection

International Nuclear Information System (INIS)

Kozachenko, V. V.; Kucherov, I.Ya.

2004-01-01

Full text: In the last few years, a growing interest has been expressed in studies of substances in different aggregate states which were performed with the help of the photothermoacoustic PTA effect. Main in this method is use of thermal waves as the carrier of the information about properties of explored substance. The excitation of thermal waves is carried out, as a rule, by modulated light flux. A specific feature of the PTA effect is the dependence of the information obtained from it on the method used for detecting thermal waves. One of the most sensitive methods for detecting a PTA signal is the piezoelectric method. For studies of solids, the PTA effect in plates offers considerable promise. In this work, PTA effect in a solid-piezoelectric layered structure is studied theoretically and experimentally. The layered plate consisting of an isotropic solid and piezoelectric crystal of a class 6 mm (or piezoelectric ceramics) is considered. The surface of a solid body is uniformly irradiated with a modulated light flux. The sample is heated and the thermal waves are generated. In the sample, the temperature field of thermal waves generates, due to the thermoelastic effect, acoustic vibration and waves that are registered by a piezoelectric. Expressions for the potential difference U across an arbitrary layer of piezoelectric transducer are derived. The solid bodies with various optical and thermal properties for cases of one-layer and two-layer piezoelectric transducer are analyzed. In particular, is shown, that for the case two-layer piezoelectric transducer, in the high-frequency region, the amplitude ratio U 1 / U 2 the tangent of the phase difference tg(Δφ) of signals taken from individual layers of the transducer depend almost linearly on the inverse square root of the frequency f -1/2 . With use of these features, the new method of definition of some elastic and thermal parameters of solid bodies offered. An experiment is performed with samples Cu, Fe

Piezoelectric Active Humidity Sensors Based on Lead-Free NaNbO3 Piezoelectric Nanofibers

Directory of Open Access Journals (Sweden)

Li Gu

2016-06-01

Full Text Available The development of micro-/nano-scaled energy harvesters and the self-powered sensor system has attracted great attention due to the miniaturization and integration of the micro-device. In this work, lead-free NaNbO3 piezoelectric nanofibers with a monoclinic perovskite structure were synthesized by the far-field electrospinning method. The flexible active humidity sensors were fabricated by transferring the nanofibers from silicon to a soft polymer substrate. The sensors exhibited outstanding piezoelectric energy-harvesting performance with output voltage up to 2 V during the vibration process. The output voltage generated by the NaNbO3 sensors exhibited a negative correlation with the environmental humidity varying from 5% to 80%, where the peak-to-peak value of the output voltage generated by the sensors decreased from 0.40 to 0.07 V. The sensor also exhibited a short response time, good selectively against ethanol steam, and great temperature stability. The piezoelectric active humidity sensing property could be attributed to the increased leakage current in the NaNbO3 nanofibers, which was generated due to proton hopping among the H3O+ groups in the absorbed H2O layers under the driving force of the piezoelectric potential.

Photon detection with CMOS sensors for fast imaging

International Nuclear Information System (INIS)

Baudot, J.; Dulinski, W.; Winter, M.; Barbier, R.; Chabanat, E.; Depasse, P.; Estre, N.

2009-01-01

Pixel detectors employed in high energy physics aim to detect single minimum ionizing particle with micrometric positioning resolution. Monolithic CMOS sensors succeed in this task thanks to a low equivalent noise charge per pixel of around 10 to 15 e - , and a pixel pitch varying from 10 to a few 10 s of microns. Additionally, due to the possibility for integration of some data treatment in the sensor itself, readout times of 100μs have been reached for 100 kilo-pixels sensors. These aspects of CMOS sensors are attractive for applications in photon imaging. For X-rays of a few keV, the efficiency is limited to a few % due to the thin sensitive volume. For visible photons, the back-thinned version of CMOS sensor is sensitive to low intensity sources, of a few hundred photons. When a back-thinned CMOS sensor is combined with a photo-cathode, a new hybrid detector results (EBCMOS) and operates as a fast single photon imager. The first EBCMOS was produced in 2007 and demonstrated single photon counting with low dark current capability in laboratory conditions. It has been compared, in two different biological laboratories, with existing CCD-based 2D cameras for fluorescence microscopy. The current EBCMOS sensitivity and frame rate is comparable to existing EMCCDs. On-going developments aim at increasing this frame rate by, at least, an order of magnitude. We report in conclusion, the first test of a new CMOS sensor, LUCY, which reaches 1000 frames per second.

Contact CMOS imaging of gaseous oxygen sensor array.

Science.gov (United States)

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

Single-chip RF communications systems in CMOS

DEFF Research Database (Denmark)

Olesen, Ole

1997-01-01

The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone.......The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

CMOS sigma-delta converters practical design guide

CERN Document Server

De la Rosa, Jose M

2013-01-01

A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations - going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues - from high-level behavioural modelling i

Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide

Science.gov (United States)

Song, Xiaoxue; Hui, Fei; Knobloch, Theresia; Wang, Bingru; Fan, Zhongchao; Grasser, Tibor; Jing, Xu; Shi, Yuanyuan; Lanza, Mario

2017-08-01

The synthesis of piezoelectric two-dimensional (2D) materials is very attractive for implementing advanced energy harvesters and transducers, as these materials provide enormously large areas for the exploitation of the piezoelectric effect. Among all 2D materials, molybdenum disulfide (MoS2) has shown the largest piezoelectric activity. However, all research papers in this field studied just a single material, and this may raise concerns because different setups could provide different values depending on experimental parameters (e.g., probes used and areas analyzed). By using conductive atomic force microscopy, here we in situ demonstrate that the piezoelectric currents generated in MoS2 are gigantic (65 mA/cm2), while the same experiments in graphene just showed noise currents. These results provide the most reliable comparison yet reported on the piezoelectric effect in graphene and MoS2.

Postbuckling Investigations of Piezoelectric Microdevices Considering Damage Effects

Science.gov (United States)

Sun, Zhigang; Wang, Xianqiao

2014-01-01

Piezoelectric material has been emerging as a popular building block in MEMS devices owing to its unique mechanical and electrical material properties. However, the reliability of MEMS devices under buckling deformation environments remains elusive and needs to be further explored. Based on the Talreja's tensor valued internal state damage variables as well as the Helmhotlz free energy of piezoelectric material, a constitutive model of piezoelectric materials with damage is presented. The Kachanvo damage evolution law under in-plane compressive loads is employed. The model is applied to the specific case of the postbuckling analysis of the piezoelectric plate with damage. Then, adopting von Karman's plate theory, the nonlinear governing equations of the piezoelectric plates with initial geometric deflection including damage effects under in-plane compressive loads are established. By using the finite difference method and the Newmark scheme, the damage evolution for damage accumulation is developed and the finite difference procedure for postbuckling equilibrium path is simultaneously employed. Numerical results show the postbuckling behaviors of initial flat and deflected piezoelectric plates with damage or no damage under different sets of electrical loading conditions. The effects of applied voltage, aspect ratio of plate, thick-span ratio of plate, damage as well as initial geometric deflections on the postbuckling behaviors of the piezoelectric plate are discussed. PMID:24618774

High-Voltage-Input Level Translator Using Standard CMOS

Science.gov (United States)

Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

2011-01-01

proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

Advancement of CMOS Doping Technology in an External Development Framework

Science.gov (United States)

Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

2011-01-01

The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

Power enhancement of piezoelectric transformers by adding heat transfer equipment.

Science.gov (United States)

Su, Yu-Hao; Liu, Yuan-Ping; Vasic, Dejan; Wu, Wen-Jong; Costa, François; Lee, Chih-Kung

2012-10-01

It is known that piezoelectric transformers have several inherent advantages compared with conventional electromagnetic transformers. However, the maximum power capacity of piezoelectric transformers is not as large as electromagnetic transformers in practice, especially in the case of high output current. The theoretical power density of piezoelectric transformers calculated by stress boundary can reach 330 W/cm(3), but no piezoelectric transformer has ever reached such a high power density in practice. The power density of piezoelectric transformers is limited to 33 W/cm(3) in practical applications. The underlying reason is that the maximum passing current of the piezoelectric material (mechanical current) is limited by the temperature rise caused by heat generation. To increase this current and the power capacity, we proposed to add a thermal pad to the piezoelectric transformer to dissipate heat. The experimental results showed that the proposed techniques can increase by 3 times the output current of the piezoelectric transformer. A theoretical-phenomenological model which explains the relationship between vibration velocity and generated heat is also established to verify the experimental results.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Science.gov (United States)

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

Transient-induced latchup in CMOS integrated circuits

CERN Document Server

Ker, Ming-Dou

2009-01-01

"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process."--Publisher's description.

Low-energy impact of adaptive cylindrical piezoelectric-composite shells

Energy Technology Data Exchange (ETDEWEB)

Saravanos, D.A. [University of Patras (United Kingdom). Dept. of Mechanical Engineering and Aeronautics; Christoforou, A.P. [Kuwait Univ. (Kuwait). Dept. of Mechanical Engineering

2002-04-01

A theoretical framework for analyzing low-energy impacts of laminated shells with active and sensory piezoelectric layers is presented, including impactor dynamics and contact law. The formulation encompasses a coupled piezoelectric shell theory mixing first order shear displacement assumptions and layerwise variation of electric potential. An exact in-plane Ritz solution for the impact of open cylindrical piezoelectric-composite shells is developed and solved numerically using an explicit time integration scheme. The active impact control problem of adaptive cylindrical shells with distributed curved piezoelectric actuators is addressed. The cases of optimized state feedback controllers and output feedback controllers using piezoelectric sensors are analyzed. Numerical results quantify the impact response of cylindrical shells of various curvatures including the signal of curved piezoelectric sensors. Additional numerical studies quantify the impact response of adaptive cylindrical panels and investigate the feasibility of actively reducing the impact force. (author)

Electronically droplet energy harvesting using piezoelectric cantilevers

KAUST Repository

Al Ahmad, Mahmoud Al; Jabbour, Ghassan E.

2012-01-01

A report is presented on free falling droplet energy harvesting using piezoelectric cantilevers. The harvester incorporates a multimorph clamped-free cantilever which is composed of five layers of lead zirconate titanate piezoelectric thick films

Design and characterization of piezoelectric ultrasonic motors

Science.gov (United States)

Yener, Serra

This thesis presents modeling and prototype fabrication and characterization of new types of piezoelectric ultrasonic micromotors. Our approach in designing these piezoelectric motors was: (i) to simplify the structure including the poling configuration of piezoelectric elements used in the stator and (ii) to reduce the number of components in order to decrease the cost and enhance the driving reliability. There are two different types of piezoelectric motors designed throughout this research. The first of these designs consists of a metal tube, on which two piezoelectric ceramic plates poled in thickness direction, were bonded. Two orthogonal bending modes of the hollow cylinder were superimposed resulting in a rotational vibration. Since the structure and poling configuration of the active piezoelectric elements used in the stator are simple, this motor structure is very suitable for miniaturization. Moreover, a single driving source can excite two bending modes at the same time, thus generate a wobble motion. Three types of prototypes are included in this design. The piezoelectric stator structure is the same for all. However, the dimensions of the motors are reduced by almost 50 percent. Starting with a 10 mm long stator, we reached to 4 mm in the last prototype. The initial diameter was 2.4 mm, which was reduced to 1.6 mm. In the final design, the rotor part of the motor was changed resulting in the reduction in the number of components. In terms of driving circuit, a single driving source was enough to run the motors and a conventional switching power supply type resonant L-C circuit was used. A simple motor structure with a simple driving circuit were combined successfully and fabricated inexpensively. The second design is a shear type piezoelectric linear motor. The behavior of a single rectangular piezoelectric shear plate was analyzed and after optimizing the dimensions and the mode characteristics, a prototype was fabricated. The prototype consists of

Effect of garment design on piezoelectricity harvesting from joint movement

International Nuclear Information System (INIS)

Yang, Jin-Hee; Cho, Hyun-Seung; Park, Seon-Hyung; Song, Seung-Hwan; Yun, Kwang-Seok; Lee, Joo Hyeon

2016-01-01

The harvesting of piezoelectricity through the human body involves the conversion of mechanical energy, mostly generated by the repeated movements of the body, to electrical energy, irrespective of the time and location. In this research, it was expected that the garment design would play an important role in increasing the efficiency of piezoelectricity scavenged in a garment because the mechanical deformation imposed on the energy harvester could increase through an optimal design configuration for the garment parts supporting a piezoelectricity harvester. With this expectation, this research aimed to analyze the effect of the clothing factors, and that of human factors on the efficiency of piezoelectricity harvesting through clothing in joint movements. These analyses resulted in that the efficiency of the piezoelectricity harvesting was affected from both two clothing factors, tightness level depending upon the property of the textile material and design configuration of the garment part supporting the piezoelectricity harvesting. Among the three proposed designs of the garment part supporting the piezoelectricity harvesting, ‘reinforced 3D module design,’ which maximized the value of radius in the piezoelectricity harvester, showed the highest efficiency across all areas of the joints in the human body. The two human factors, frequency of movement and body part, affected the efficiency of the piezoelectricity harvesting as well. (paper)

Development of a CMOS process using high energy ion implantation

International Nuclear Information System (INIS)

Stolmeijer, A.

1986-01-01

The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

Monitoring eating habits using a piezoelectric sensor-based necklace.

Science.gov (United States)

Kalantarian, Haik; Alshurafa, Nabil; Le, Tuan; Sarrafzadeh, Majid

2015-03-01

Maintaining appropriate levels of food intake and developing regularity in eating habits is crucial to weight loss and the preservation of a healthy lifestyle. Moreover, awareness of eating habits is an important step towards portion control and weight loss. In this paper, we introduce a novel food-intake monitoring system based around a wearable wireless-enabled necklace. The proposed necklace includes an embedded piezoelectric sensor, small Arduino-compatible microcontroller, Bluetooth LE transceiver, and Lithium-Polymer battery. Motion in the throat is captured and transmitted to a mobile application for processing and user guidance. Results from data collected from 30 subjects indicate that it is possible to detect solid and liquid foods, with an F-measure of 0.837 and 0.864, respectively, using a naive Bayes classifier. Furthermore, identification of extraneous motions such as head turns and walking are shown to significantly reduce the false positive rate of swallow detection. Copyright © 2015 Elsevier Ltd. All rights reserved.

Computational and Experimental Insight Into Single-Molecule Piezoelectric Materials

Science.gov (United States)

Marvin, Christopher Wayne

Piezoelectric materials allow for the harvesting of ambient waste energy from the environment. Producing lightweight, highly responsive materials is a challenge for this type of material, requiring polymer, foam, or bio-inspired materials. In this dissertation, I explore the origin of the piezoelectric effect in single molecules through density functional theory (DFT), analyze the piezoresponse of bio-inspired peptidic materials through the use of atomic and piezoresponse force microscopy (AFM and PFM), and develop a novel class of materials combining flexible polyurethane foams and non-piezoelectric, polar dopants. For the DFT calculations, functional group, regiochemical, and heteroatom derivatives of [6]helicene were examined for their influence on the piezoelectric response. An aza[6]helicene derivative was found to have a piezoelectric response (108 pm/V) comparable to ceramics such as lead zirconium titanate (200+ pm/V). These computed materials have the possibility to compete with current field-leading piezomaterials such as lead zirconium titanate (PZT), zinc oxide (ZnO), and polyvinylidene difluoride (PVDF) and its derivatives. The use of AFM/PFM allows for the demonstration of the piezoelectric effect of the selfassembled monolayer (SAM) peptidic systems. Through PFM, the influence that the helicity and sequence of the peptide has on the overall response of the molecule can be analyzed. Finally, development of a novel class of piezoelectrics, the foam-based materials, expands the current understanding of the qualities required for a piezoelectric material from ceramic and rigid materials to more flexible, organic materials. Through the exploration of these novel types of piezoelectric materials, new design rules and figures of merit have been developed.

Shunted Piezoelectric Vibration Damping Analysis Including Centrifugal Loading Effects

Science.gov (United States)

Min, James B.; Duffy, Kirsten P.; Provenza, Andrew J.

2011-01-01

Excessive vibration of turbomachinery blades causes high cycle fatigue problems which require damping treatments to mitigate vibration levels. One method is the use of piezoelectric materials as passive or active dampers. Based on the technical challenges and requirements learned from previous turbomachinery rotor blades research, an effort has been made to investigate the effectiveness of a shunted piezoelectric for the turbomachinery rotor blades vibration control, specifically for a condition with centrifugal rotation. While ample research has been performed on the use of a piezoelectric material with electric circuits to attempt to control the structural vibration damping, very little study has been done regarding rotational effects. The present study attempts to fill this void. Specifically, the objectives of this study are: (a) to create and analyze finite element models for harmonic forced response vibration analysis coupled with shunted piezoelectric circuits for engine blade operational conditions, (b) to validate the experimental test approaches with numerical results and vice versa, and (c) to establish a numerical modeling capability for vibration control using shunted piezoelectric circuits under rotation. Study has focused on a resonant damping control using shunted piezoelectric patches on plate specimens. Tests and analyses were performed for both non-spinning and spinning conditions. The finite element (FE) shunted piezoelectric circuit damping simulations were performed using the ANSYS Multiphysics code for the resistive and inductive circuit piezoelectric simulations of both conditions. The FE results showed a good correlation with experimental test results. Tests and analyses of shunted piezoelectric damping control, demonstrating with plate specimens, show a great potential to reduce blade vibrations under centrifugal loading.

A novel multi-level IC-compatible surface microfabrication technology for MEMS with independently controlled lateral and vertical submicron transduction gaps

Science.gov (United States)

Cicek, Paul-Vahe; Elsayed, Mohannad; Nabki, Frederic; El-Gamal, Mourad

2017-11-01

An above-IC compatible multi-level MEMS surface microfabrication technology based on a silicon carbide structural layer is presented. The fabrication process flow provides optimal electrostatic transduction by allowing the creation of independently controlled submicron vertical and lateral gaps without the need for high resolution lithography. Adopting silicon carbide as the structural material, the technology ensures material, chemical and thermal compatibility with modern semiconductor nodes, reporting the lowest peak processing temperature (i.e. 200 °C) of all comparable works. This makes this process ideally suited for integrating capacitive-based MEMS directly above standard CMOS substrates. Process flow design and optimization are presented in the context of bulk-mode disk resonators, devices that are shown to exhibit improved performance with respect to previous generation flexural beam resonators, and that represent relatively complex MEMS structures. The impact of impending improvements to the fabrication technology is discussed.

A novel multi-level IC-compatible surface microfabrication technology for MEMS with independently controlled lateral and vertical submicron transduction gaps

International Nuclear Information System (INIS)

Cicek, Paul-Vahe; Elsayed, Mohannad; Nabki, Frederic; El-Gamal, Mourad

2017-01-01

An above-IC compatible multi-level MEMS surface microfabrication technology based on a silicon carbide structural layer is presented. The fabrication process flow provides optimal electrostatic transduction by allowing the creation of independently controlled submicron vertical and lateral gaps without the need for high resolution lithography. Adopting silicon carbide as the structural material, the technology ensures material, chemical and thermal compatibility with modern semiconductor nodes, reporting the lowest peak processing temperature (i.e. 200 °C) of all comparable works. This makes this process ideally suited for integrating capacitive-based MEMS directly above standard CMOS substrates. Process flow design and optimization are presented in the context of bulk-mode disk resonators, devices that are shown to exhibit improved performance with respect to previous generation flexural beam resonators, and that represent relatively complex MEMS structures. The impact of impending improvements to the fabrication technology is discussed. (paper)

Ab Initio Prediction of Piezoelectricity in Two-Dimensional Materials.

Science.gov (United States)

Blonsky, Michael N; Zhuang, Houlong L; Singh, Arunima K; Hennig, Richard G

2015-10-27

Two-dimensional (2D) materials present many unique materials concepts, including material properties that sometimes differ dramatically from those of their bulk counterparts. One of these properties, piezoelectricity, is important for micro- and nanoelectromechanical systems applications. Using symmetry analysis, we determine the independent piezoelectric coefficients for four groups of predicted and synthesized 2D materials. We calculate with density-functional perturbation theory the stiffness and piezoelectric tensors of these materials. We determine the in-plane piezoelectric coefficient d11 for 37 materials within the families of 2D metal dichalcogenides, metal oxides, and III-V semiconductor materials. A majority of the structures, including CrSe2, CrTe2, CaO, CdO, ZnO, and InN, have d11 coefficients greater than 5 pm/V, a typical value for bulk piezoelectric materials. Our symmetry analysis shows that buckled 2D materials exhibit an out-of-plane coefficient d31. We find that d31 for 8 III-V semiconductors ranges from 0.02 to 0.6 pm/V. From statistical analysis, we identify correlations between the piezoelectric coefficients and the electronic and structural properties of the 2D materials that elucidate the origin of the piezoelectricity. Among the 37 2D materials, CdO, ZnO, and CrTe2 stand out for their combination of large piezoelectric coefficient and low formation energy and are recommended for experimental exploration.

A CMOS transconductance-C filter technique for very high frequencies

NARCIS (Netherlands)

Nauta, Bram

1992-01-01

CMOS circuits for integrated analog filters at very high frequencies, based on transconductance-C integrators, are presented. First a differential transconductance element based on CMOS inverters is described. With this circuit a linear, tunable integrator for very-high-frequency integrated filters

Piezoelectric polydimethylsiloxane films for MEMS transducers

International Nuclear Information System (INIS)

Wang, Jhih-Jhe; Hsu, Tsung-Hsing; Yeh, Che-Nan; Tsai, Jui-Wei; Su, Yu-Chuan

2012-01-01

We have successfully demonstrated the fabrication of piezoelectric polydimethylsiloxane (PDMS) films utilizing multilayer casting, stacking, surface coating and micro plasma discharge processes. To realize the desired electromechanical sensitivity, cellular PDMS structures with micrometer-sized voids are implanted with bipolar charges on the opposite inner surfaces. The implanted charge pairs function as dipoles, which respond promptly to diverse electromechanical stimulation. In the prototype demonstration, cellular PDMS films with various void geometries are fabricated and internally coated with a thin layer of polytetrafluoroethylene, which can help secure the implanted charges. An electric field up to 35 MV m −1 is applied across the fabricated PDMS films to ionize the air in the voids and to accelerate the resulting bipolar charges to bombard the opposite inner surfaces. The resulting charge-implanted, cellular PDMS films show a low effective elastic modulus (E) of about 500 kPa, and a piezoelectric coefficient (d 33 ) higher than 300 pC N −1 , which is more than ten times higher than those of common piezoelectric polymers (e.g. polyvinylidene fluoride). Furthermore, the piezoelectricity of the PDMS films can be tailored by adjusting the dimensions of the cellular structures. As such, the demonstrated piezoelectric PDMS films could potentially serve as flexible and sensitive electromechanical materials, and fulfill the needs of a variety of sensor and energy harvesting applications. (paper)

Human-computer interface glove using flexible piezoelectric sensors

Science.gov (United States)

Cha, Youngsu; Seo, Jeonggyu; Kim, Jun-Sik; Park, Jung-Min

2017-05-01

In this note, we propose a human-computer interface glove based on flexible piezoelectric sensors. We select polyvinylidene fluoride as the piezoelectric material for the sensors because of advantages such as a steady piezoelectric characteristic and good flexibility. The sensors are installed in a fabric glove by means of pockets and Velcro bands. We detect changes in the angles of the finger joints from the outputs of the sensors, and use them for controlling a virtual hand that is utilized in virtual object manipulation. To assess the sensing ability of the piezoelectric sensors, we compare the processed angles from the sensor outputs with the real angles from a camera recoding. With good agreement between the processed and real angles, we successfully demonstrate the user interaction system with the virtual hand and interface glove based on the flexible piezoelectric sensors, for four hand motions: fist clenching, pinching, touching, and grasping.

Piezoelectric coefficients and spontaneous polarization of ScAlN

International Nuclear Information System (INIS)

Caro, Miguel A; Laurila, Tomi; Zhang, Siyuan; Moram, Michelle A; Riekkinen, Tommi; Ylilammi, Markku; Molarius, Jyrki; Lopez-Acevedo, Olga

2015-01-01

We present a computational study of spontaneous polarization and piezoelectricity in Sc x Al 1−x N alloys in the compositional range from x = 0 to x = 0.5, obtained in the context of density functional theory and the Berry-phase theory of electric polarization using large periodic supercells. We report composition-dependent values of piezoelectric coefficients e ij , piezoelectric moduli d ij and elastic constants C ij . The theoretical findings are complemented with experimental measurement of e 33 for a series of sputtered ScAlN films carried out with a piezoelectric resonator. The rapid increase with Sc content of the piezoelectric response reported in previous studies is confirmed for the available data. A detailed description of the full methodology required to calculate the piezoelectric properties of ScAlN, with application to other complex alloys, is presented. In particular, we find that the large amount of internal strain present in ScAlN and its intricate relation with electric polarization make configurational sampling and the use of large supercells at different compositions necessary in order to accurately derive the piezoelectric response of the material. (paper)

Extrusion and properties of lead zirconate titanate piezoelectric ceramics

DEFF Research Database (Denmark)

Cai, S.; Millar, C.E.; Pedersen, L.

1997-01-01

The purpose of this work was to develop a procedure for fabricating electroceramic actuators with good piezoelectric properties. The preparation of lead zirconate titanate (PZT) piezoelectric ceramic rods and tubes by extrusion processing is described. The microstructure of extrudates was investi......The purpose of this work was to develop a procedure for fabricating electroceramic actuators with good piezoelectric properties. The preparation of lead zirconate titanate (PZT) piezoelectric ceramic rods and tubes by extrusion processing is described. The microstructure of extrudates...

Energy Harvesting From Low Frequency Applications Using Piezoelectric Materials

Energy Technology Data Exchange (ETDEWEB)

Li, Huidong; Tian, Chuan; Deng, Zhiqun

2014-11-06

This paper reviewed the state of research on piezoelectric energy harvesters. Various types of harvester configurations, piezoelectric materials, and techniques used to improve the mechanical-to-electrical energy conversion efficiency were discussed. Most of the piezoelectric energy harvesters studied today have focused on scavenging mechanical energy from vibration sources due to their abundance in both natural and industrial environments. Cantilever beams have been the most studied structure for piezoelectric energy harvester to date because of the high responsiveness to small vibrations.

Characterization of a Piezoelectric Buzzer Using a Michelson Interferometer

Science.gov (United States)

Lloyd, S.; Paetkau, M.

2010-01-01

A piezoelectric material generates an electric potential across its surface when subjected to mechanical stress; conversely, the inverse piezoelectric effect describes the expansion or contraction of the material when subjected to some applied voltage. Piezoelectric materials are used in devices such as doorbell buzzers, barbeque igniters, and…

Nano-electromechanical switch-CMOS hybrid technology and its applications.

Science.gov (United States)

Lee, B H; Hwang, H J; Cho, C H; Lim, S K; Lee, S Y; Hwang, H

2011-01-01

Si-based CMOS technology is facing a serious challenge in terms of power consumption and variability. The increasing costs associated with physical scaling have motivated a search for alternative approaches. Hybridization of nano-electromechanical (NEM)-switch and Si-based CMOS devices has shown a theoretical feasibility for power management, but a huge technical gap must be bridged before a nanoscale NEM switch can be realized due to insufficient material development and the limited understanding of its reliability characteristics. These authors propose the use of a multilayer graphene as a nanoscale cantilever material for a nanoscale NEM switchwith dimensions comparable to those of the state-of-the-art Si-based CMOS devices. The optimal thickness for the multilayer graphene (about five layers) is suggested based on an analytical model. Multilayer graphene can provide the highest Young's modulus among the known electrode materials and a yielding strength that allows more than 15% bending. Further research on material screening and device integration is needed, however, to realize the promises of the hybridization of NEM-switch and Si-based CMOS devices.

Development of radiation hard CMOS active pixel sensors for HL-LHC

International Nuclear Information System (INIS)

Pernegger, Heinz

2016-01-01

New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

Pre-Clinical Tests of an Integrated CMOS Biomolecular Sensor for Cardiac Diseases Diagnosis.

Science.gov (United States)

Lee, Jen-Kuang; Wang, I-Shun; Huang, Chi-Hsien; Chen, Yih-Fan; Huang, Nien-Tsu; Lin, Chih-Ting

2017-11-26

Coronary artery disease and its related complications pose great threats to human health. In this work, we aim to clinically evaluate a CMOS field-effect biomolecular sensor for cardiac biomarkers, cardiac-specific troponin-I (cTnI), N -terminal prohormone brain natriuretic peptide (NT-proBNP), and interleukin-6 (IL-6). The CMOS biosensor is implemented via a standard commercialized 0.35 μm CMOS process. To validate the sensing characteristics, in buffer conditions, the developed CMOS biosensor has identified the detection limits of IL-6, cTnI, and NT-proBNP as being 45 pM, 32 pM, and 32 pM, respectively. In clinical serum conditions, furthermore, the developed CMOS biosensor performs a good correlation with an enzyme-linked immuno-sorbent assay (ELISA) obtained from a hospital central laboratory. Based on this work, the CMOS field-effect biosensor poses good potential for accomplishing the needs of a point-of-care testing (POCT) system for heart disease diagnosis.

Tubular fluoropolymer arrays with high piezoelectric response

Science.gov (United States)

Zhukov, Sergey; Eder-Goy, Dagmar; Biethan, Corinna; Fedosov, Sergey; Xu, Bai-Xiang; von Seggern, Heinz

2018-01-01

Polymers with electrically charged internal air cavities called ferroelectrets exhibit a pronounced piezoelectric effect and are regarded as soft functional materials suitable for sensor and actuator applications. In this work, a simple method for fabricating piezoelectret arrays with open-tubular channels is introduced. A set of individual fluoroethylenepropylene (FEP) tubes is compressed between two heated metal plates. The squeezed FEP tubes are melted together at +270 °C. The resulting structure is a uniform, multi-tubular, flat array that reveals a strong piezoelectric response after a poling step. The fabricated arrays have a high ratio between piezoelectrically active and non-active areas. The optimal charging voltage and stability of the piezoelectric coefficients with pressures and frequency were experimentally investigated for two specific array structures with wall thickness of 50 and 120 μm. The array fabricated from 50 μm thick FEP tubes reveals a stable and high piezoelectric coefficient of {d}33 = 120-160 pC N-1 with a flat frequency response between 0.1 Hz and 10 kHz for pressures between 1 and 100 kPa. An increase of wall thickness to 120 μm is accompanied by a more than twofold decrease in the piezoelectric coefficient as a result of a simultaneously higher effective array stiffness and lower remanent polarization. The obtained experimental results can be used to optimize the array design with regard to the electromechanical performance.

Piezoelectric Templates – New Views on Biomineralization and Biomimetics

Science.gov (United States)

Stitz, Nina; Eiben, Sabine; Atanasova, Petia; Domingo, Neus; Leineweber, Andreas; Burghard, Zaklina; Bill, Joachim

2016-01-01

Biomineralization in general is based on electrostatic interactions and molecular recognition of organic and inorganic phases. These principles of biomineralization have also been utilized and transferred to bio-inspired synthesis of functional materials during the past decades. Proteins involved in both, biomineralization and bio-inspired processes, are often piezoelectric due to their dipolar character hinting to the impact of a template’s piezoelectricity on mineralization processes. However, the piezoelectric contribution on the mineralization process and especially the interaction of organic and inorganic phases is hardly considered so far. We herein report the successful use of the intrinsic piezoelectric properties of tobacco mosaic virus (TMV) to synthesize piezoelectric ZnO. Such films show a two-fold increase of the piezoelectric coefficient up to 7.2 pm V−1 compared to films synthesized on non-piezoelectric templates. By utilizing the intrinsic piezoelectricity of a biotemplate, we thus established a novel synthesis pathway towards functional materials, which sheds light on the whole field of biomimetics. The obtained results are of even broader and general interest since they are providing a new, more comprehensive insight into the mechanisms involved into biomineralization in living nature. PMID:27212583

Low-Temperature Solution Processable Electrodes for Piezoelectric Sensors Applications

Science.gov (United States)

Tuukkanen, Sampo; Julin, Tuomas; Rantanen, Ville; Zakrzewski, Mari; Moilanen, Pasi; Lupo, Donald

2013-05-01

Piezoelectric thin-film sensors are suitable for a wide range of applications from physiological measurements to industrial monitoring systems. The use of flexible materials in combination with high-throughput printing technologies enables cost-effective manufacturing of custom-designed, highly integratable piezoelectric sensors. This type of sensor can, for instance, improve industrial process control or enable the embedding of ubiquitous sensors in our living environment to improve quality of life. Here, we discuss the benefits, challenges and potential applications of piezoelectric thin-film sensors. The piezoelectric sensor elements are fabricated by printing electrodes on both sides of unmetallized poly(vinylidene fluoride) film. We show that materials which are solution processable in low temperatures, biocompatible and environmental friendly are suitable for use as electrode materials in piezoelectric sensors.

State-of-the-art piezoelectric transformer-based switch mode power supplies

DEFF Research Database (Denmark)

Ekhtiari, Marzieh; Zhang, Zhe; Andersen, Michael A. E.

2014-01-01

Inductorless switch mode power supplies based on piezoelectric transformers are used to replace conventional transformers in high power density switch mode power supplies. Even though piezoelectric-based converters exhibit a high d egree of nonlinearity, it is desirable to use piezoelectric transfo...... discusses power supplies with the trend evaluation of piezoelectric transformer-based converter topologies and control methods. The challenges of piezoelectric transformers regarding soft switching capability and nonlinearity are addressed. This paper can be used as a guideline f or choosing a proper...... topology of piezoelectric-based switch mode power supply and a control method for the required application....

Electronically droplet energy harvesting using piezoelectric cantilevers

KAUST Repository

Al Ahmad, Mahmoud Al

2012-01-01

A report is presented on free falling droplet energy harvesting using piezoelectric cantilevers. The harvester incorporates a multimorph clamped-free cantilever which is composed of five layers of lead zirconate titanate piezoelectric thick films. During the impact, the droplet kinetic energy is transferred into the form of mechanical stress forcing the piezoelectric structure to vibrate. Experimental results show energy of 0.3 μJ per droplet. The scenario of moderate falling drop intensity, i.e. 230 drops per second, yields a total energy of 400 μJ. © 2012 The Institution of Engineering and Technology.

Electromechanical displacement of piezoelectric-electrostrictive monolithic bilayer composites

Science.gov (United States)

Ngernchuklin, P.; Akdoǧan, E. K.; Safari, A.; Jadidian, B.

2009-02-01

We examine the electromechanical displacement of piezoelectric-electrostrictive monolithic bilayer composites with various piezoelectric volume percentage obtained by cosintering piezoelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 and electrostrictive 0.9Pb(Mg1/3Nb2/.3)O3-0.1PbTiO3 under unipolar and bipolar electric field excitation up to 10 kV/cm experimentally. It is shown that the effective d33 of the composites is limited by the electrostrictive layer, which acts as a capacitor in series to the piezoelectric layer, causing incomplete poling. We show that by controlling the volume content of the piezoelectric layer and constraining it with an electrostrictor, substantial strain amplification (15 μm for bipolar excitation) can be achieved while inducing asymmetry to the displacement with respect to the polarity of the applied field, which we discuss in the context of symmetry superposition.

Integrated 60GHz RF beamforming in CMOS

CERN Document Server

Yu, Yikun; van Roermund, Arthur H M

2011-01-01

""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

Challenges & Roadmap for Beyond CMOS Computing Simulation.

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Arun F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Frank, Michael P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-12-01

Simulating HPC systems is a difficult task and the emergence of “Beyond CMOS” architectures and execution models will increase that difficulty. This document presents a “tutorial” on some of the simulation challenges faced by conventional and non-conventional architectures (Section 1) and goals and requirements for simulating Beyond CMOS systems (Section 2). These provide background for proposed short- and long-term roadmaps for simulation efforts at Sandia (Sections 3 and 4). Additionally, a brief explanation of a proof-of-concept integration of a Beyond CMOS architectural simulator is presented (Section 2.3).

A Fabry-Perot Interferometry Based MRI-Compatible Miniature Uniaxial Force Sensor for Percutaneous Needle Placement

Science.gov (United States)

Shang, Weijian; Su, Hao; Li, Gang; Furlong, Cosme; Fischer, Gregory S.

2014-01-01

Robot-assisted surgical procedures, taking advantage of the high soft tissue contrast and real-time imaging of magnetic resonance imaging (MRI), are developing rapidly. However, it is crucial to maintain tactile force feedback in MRI-guided needle-based procedures. This paper presents a Fabry-Perot interference (FPI) based system of an MRI-compatible fiber optic sensor which has been integrated into a piezoelectrically actuated robot for prostate cancer biopsy and brachytherapy in 3T MRI scanner. The opto-electronic sensing system design was minimized to fit inside an MRI-compatible robot controller enclosure. A flexure mechanism was designed that integrates the FPI sensor fiber for measuring needle insertion force, and finite element analysis was performed for optimizing the correct force-deformation relationship. The compact, low-cost FPI sensing system was integrated into the robot and calibration was conducted. The root mean square (RMS) error of the calibration among the range of 0–10 Newton was 0.318 Newton comparing to the theoretical model which has been proven sufficient for robot control and teleoperation. PMID:25126153

Performance of a piezoelectric energy harvester in actual rain

International Nuclear Information System (INIS)

Wong, Voon-Kean; Ho, Jee-Hou; Chai, Ai-Bao

2017-01-01

When raindrops impact on the surface of a piezoelectric beam, strain energy produced by the impinging raindrop will be converted to harvestable electrical energy by the piezoelectric layers in a cantilever beam. The novelty of this study is to investigate the performance of the harvester in actual rain and provide practical insights on implementation. The influences of rain parameters such as rain rate, rainfall depth, raindrop count, and drop size distribution (DSD) are discussed in this study. The raindrops accumulated on the surface of the piezoelectric beam will form a water layer. It is described using added mass coefficient in this study. In an actual rain experiment, a piezoelectric beam with surface area of 0.0018 m 2 is able to produce 2076 μJ of energy over a duration of 301 min. The energy generation of a raindrop impact piezoelectric energy harvester is highly dependent on the rain rate. Due to the inconsistency of the energy generation, the piezoelectric energy harvester would require an integration of suitable energy storage device for continuous operation. Nevertheless, this work shows the feasibility of harvesting raindrop energy using a piezoelectric beam. - Highlights: • The performance of a piezoelectric rain energy harvester is tested in actual rain. • The energy generation is highly dependent on the rain rate. • Practical insights on the implementation of the harvester are discussed. • A total energy of 2076 μJ is generated over a duration of 301 min.

Biodegradable Piezoelectric Force Sensor.

Science.gov (United States)

Curry, Eli J; Ke, Kai; Chorsi, Meysam T; Wrobel, Kinga S; Miller, Albert N; Patel, Avi; Kim, Insoo; Feng, Jianlin; Yue, Lixia; Wu, Qian; Kuo, Chia-Ling; Lo, Kevin W-H; Laurencin, Cato T; Ilies, Horea; Purohit, Prashant K; Nguyen, Thanh D

2018-01-30

Measuring vital physiological pressures is important for monitoring health status, preventing the buildup of dangerous internal forces in impaired organs, and enabling novel approaches of using mechanical stimulation for tissue regeneration. Pressure sensors are often required to be implanted and directly integrated with native soft biological systems. Therefore, the devices should be flexible and at the same time biodegradable to avoid invasive removal surgery that can damage directly interfaced tissues. Despite recent achievements in degradable electronic devices, there is still a tremendous need to develop a force sensor which only relies on safe medical materials and requires no complex fabrication process to provide accurate information on important biophysiological forces. Here, we present a strategy for material processing, electromechanical analysis, device fabrication, and assessment of a piezoelectric Poly-l-lactide (PLLA) polymer to create a biodegradable, biocompatible piezoelectric force sensor, which only employs medical materials used commonly in Food and Drug Administration-approved implants, for the monitoring of biological forces. We show the sensor can precisely measure pressures in a wide range of 0-18 kPa and sustain a reliable performance for a period of 4 d in an aqueous environment. We also demonstrate this PLLA piezoelectric sensor can be implanted inside the abdominal cavity of a mouse to monitor the pressure of diaphragmatic contraction. This piezoelectric sensor offers an appealing alternative to present biodegradable electronic devices for the monitoring of intraorgan pressures. The sensor can be integrated with tissues and organs, forming self-sensing bionic systems to enable many exciting applications in regenerative medicine, drug delivery, and medical devices.

VLSI scaling methods and low power CMOS buffer circuit

International Nuclear Information System (INIS)

Sharma Vijay Kumar; Pattanaik Manisha

2013-01-01

Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

Optimal design of robust piezoelectric unimorph microgrippers

DEFF Research Database (Denmark)

Ruiz, David; Díaz-Molina, Alex; Sigmund, Ole

2018-01-01

Topology optimization can be used to design piezoelectric actuators by simultaneous design of host structure and polarization profile. Subsequent micro-scale fabrication leads us to overcome important manufacturing limitations: difficulties in placing a piezoelectric layer on both top and bottom...

Characterization of active CMOS pixel sensors on high resistive substrate

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

2016-07-01

Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

Variational principles for nonlinear piezoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Rodriguez-Ramos, R.; Guinovart-Diaz, R. [Universidad de la Habana, Facultad de Matematica y Computacion, Vedado, Habana (Cuba); Pobedria, B.E. [Moscow State University M. V. Lomonosov, Composites Department, Moscow (Russian Federation); Padilla, P. [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Matematicas Aplicadas y en Sistemas (IIMAS), Cd. Universitaria, Mexico D.F. (Mexico); Bravo-Castillero, J. [Universidad de la Habana, Facultad de Matematica y Computacion, Vedado, Habana (Cuba); Campus Estado de Mexico. Division de Arquitectura e Ingenieria, Instituto Tecnologico de Estudios Superiores de Monterrey, Atizapan de Zaragoza, Estado de Mexico (Mexico); Maugin, G.A. [Universite Pierre et Marie Curie. Case 162, UMR 7607 CNRS, Laboratoire de Modelisation en Mecanique, Paris Cedex 05 (France)

2004-12-01

In the present paper, we consider the behavior of nonlinear piezoelectric materials by generalization for this case of the Hashin-Shtrikman variational principles. The new general formulation used here differs from others, because, it gives the possibility to evaluate the upper and lower Hashin-Shtrikman bounds for specific physical nonlinearities of piezoelectric materials. Geometrical nonlinearities are not considered. (orig.)

Circuit for Driving Piezoelectric Transducers

Science.gov (United States)

Randall, David P.; Chapsky, Jacob

2009-01-01

The figure schematically depicts an oscillator circuit for driving a piezoelectric transducer to excite vibrations in a mechanical structure. The circuit was designed and built to satisfy application-specific requirements to drive a selected one of 16 such transducers at a regulated amplitude and frequency chosen to optimize the amount of work performed by the transducer and to compensate for both (1) temporal variations of the resonance frequency and damping time of each transducer and (2) initially unknown differences among the resonance frequencies and damping times of different transducers. In other words, the circuit is designed to adjust itself to optimize the performance of whichever transducer is selected at any given time. The basic design concept may be adaptable to other applications that involve the use of piezoelectric transducers in ultrasonic cleaners and other apparatuses in which high-frequency mechanical drives are utilized. This circuit includes three resistor-capacitor networks that, together with the selected piezoelectric transducer, constitute a band-pass filter having a peak response at a frequency of about 2 kHz, which is approximately the resonance frequency of the piezoelectric transducers. Gain for generating oscillations is provided by a power hybrid operational amplifier (U1). A junction field-effect transistor (Q1) in combination with a resistor (R4) is used as a voltage-variable resistor to control the magnitude of the oscillation. The voltage-variable resistor is part of a feedback control loop: Part of the output of the oscillator is rectified and filtered for use as a slow negative feedback to the gate of Q1 to keep the output amplitude constant. The response of this control loop is much slower than 2 kHz and, therefore, does not introduce significant distortion of the oscillator output, which is a fairly clean sine wave. The positive AC feedback needed to sustain oscillations is derived from sampling the current through the

Piezoelectric MEMS sensors: state-of-the-art and perspectives

International Nuclear Information System (INIS)

Tadigadapa, S; Mateti, K

2009-01-01

Over the past two decades, several advances have been made in micromachined sensors and actuators. As the field of microelectromechanical systems (MEMS) has advanced, a clear need for the integration of materials other than silicon and its compounds into micromachined transducers has emerged. Piezoelectric materials are high energy density materials that scale very favorably upon miniaturization and that has led to an ever-growing interest in piezoelectric films for MEMS applications. At this time, piezoelectric aluminum-nitride-based film bulk acoustic resonators (FBAR) have already been successfully commercialized. Future innovations and improvements in inertial sensors for navigation, high-frequency crystal oscillators and filters for wireless applications, microactuators for RF applications, chip-scale chemical analysis systems and countless other applications hinge upon the successful miniaturization of components and integration of piezoelectrics and metals into these systems. In this article, a comprehensive review of micromachined piezoelectric transducer technology will be presented. Piezoelectric materials in bulk and thin film forms will be reviewed and fabrication techniques for the integration of these materials for microsensor applications will be presented. Recent advances in various piezoelectric microsensors will be presented through specific examples. This review will conclude with a critical assessment of the future trends and promise of this technology. (topical review)

Longitudinal Modes along Thin Piezoelectric Waveguides for Liquid Sensing Applications

Directory of Open Access Journals (Sweden)

Cinzia Caliendo

2015-06-01

Full Text Available The propagation of longitudinally polarized acoustic modes along thin piezoelectric plates (BN, ZnO, InN, AlN and GaN is theoretically studied, aiming at the design of high frequency electroacoustic devices suitable for work in liquid environments. The investigation of the acoustic field profile across the plate revealed the presence of longitudinally polarized Lamb modes, travelling at velocities close to that of the longitudinal bulk acoustic wave propagating in the same direction. Such waves are suitable for the implementation of high-frequency, low-loss electroacoustic devices operating in liquid environments. The time-averaged power flow density, the phase velocity and the electroacoustic coupling coefficient K2 dispersion curves were studied, for the first (S0 and four higher order (S1, S2, S3, S4 symmetrical modes for different electrical boundary conditions. Two electroacoustic coupling configurations were investigated, based on interdigitated transducers, with or without a metal floating electrode at the opposite plate surface. Enhanced performances, such as a K2 as high as 8.5% and a phase velocity as high as 16,700 m/s, were demostrated for the ZnO- and BN-based waveguides, as an example. The relative velocity changes, and the inertial and viscous sensitivities of the first symmetric and anti-symmetric mode, S0 and A0, propagating along thin plates bordered by a viscous liquid were derived using the perturbation approach. The present study highlights the feasibility of the piezoelectric waveguides to the development of high-frequency, integrated-circuits compatible electroacoustic devices suitable for working in liquid environment.

Design of CMOS RFIC ultra-wideband impulse transmitters and receivers

CERN Document Server

Nguyen, Cam

2017-01-01

This book presents the design of ultra-wideband (UWB) impulse-based transmitter and receiver frontends, operating within the 3.1-10.6 GHz frequency band, using CMOS radio-frequency integrated-circuits (RFICs). CMOS RFICs are small, cheap, low power devices, better suited for direct integration with digital ICs as compared to those using III-V compound semiconductor devices. CMOS RFICs are thus very attractive for RF systems and, in fact, the principal choice for commercial wireless markets.  The book comprises seven chapters. The first chapter gives an introduction to UWB technology and outlines its suitability for high resolution sensing and high-rate, short-range ad-hoc networking and communications. The second chapter provides the basics of CMOS RFICs needed for the design of the UWB RFIC transmitter and receiver presented in this book. It includes the design fundamentals, lumped and distributed elements for RFIC, layout, post-layout simulation, and measurement. The third chapter discusses the basics of U...

CMOS pixel development for the ATLAS experiment at HL-LHC

CERN Document Server

Risti{c}, Branislav; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

CERN Document Server

Turchetta, R; Manolopoulos, S; Tyndel, M; Allport, P P; Bates, R; O'Shea, V; Hall, G; Raymond, M

2003-01-01

Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to ta...

CMOS Pixel Development for the ATLAS Experiment at HL-LHC

CERN Document Server

Gaudiello, Andrea; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

Comparison of effective transverse piezoelectric coefficients e31,f of Pb(Zr,Ti)O3 thin films between direct and converse piezoelectric effects

Science.gov (United States)

Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku

2015-10-01

We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.

Piezoelectric Composites by Solid Freeform Fabrication: A Nature-Inspired Approach

Science.gov (United States)

Safari, A.; Akdoğan, E. K.

Piezoelectrics and electrostrictors are indispensable materials for use in transducer technology, as they inherently possess both direct (sensing) and converse (actuation) effects. A piezoelectric/electrostrictive sensor converts a mechanical input (displacement or force) into a measurable electrical output through piezoelectric/electrostrictive energy conversion. In the case of a piezoelectric, an applied mechanical force (stress) induces a voltage across the terminals of the transducer. On the other hand, an applied mechanical force induces a change in the capacitance of an electrostrictive transducer that could be electrically detected. Hence, the mechanical to electrical energy conversion is accomplished directly when a piezoelectric is used, while the same is obtained indirectly if the electroactive material of choice is an electrostrictor. Conversely, both piezoelectric and electrostrictive materials develop an elastic strain under an applied electric field. The said elastic strain is linearly proportional to the applied field in a piezoelectric, whereas electrostrictive coupling involves the second-order (quadratic) coupling of electric field with elastic strain. While piezoelectricity is possible only in noncentrosymetric point groups, electrostriction is observed in all solids, which make it a much more general solid-state phenomenon. Sensing and actuation functions can coexist in a given transducer by the intelligent use of such materials. Piezoelectrics and electrostrictors, therefore, constitute the backbone of modern transducer technology, as mechanical to electric energy (and vice versa) conversion can be accomplished with great efficiency in a way that is second to none among all phenomena known to date [1,2].

VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications

Science.gov (United States)

Arcamone, Julien; Dupré, Cécilia; Arndt, Grégory; Colinet, Eric; Hentz, Sébastien; Ollier, Eric; Duraffourg, Laurent

2014-10-01

This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association.

Recent developments with CMOS SSPM photodetectors

Energy Technology Data Exchange (ETDEWEB)

Stapels, Christopher J. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)], E-mail: CStapels@RMDInc.com; Barton, Paul [University of Michigan, Ann Arbor, MI (United States); Johnson, Erik B. [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Wehe, David K. [University of Michigan, Ann Arbor, MI (United States); Dokhale, Purushottam; Shah, Kanai [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Augustine, Frank L. [Augustine Engineering, Encinitas, CA (United States); Christian, James F. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)

2009-10-21

Experiments and simulations using various solid-state photomultiplier (SSPM) designs have been performed to evaluate pixel layouts and explore design choices. SPICE simulations of a design for position-sensing SSPMs showed charge division in the resistor network, and anticipated timing performance of the device. The simulation results predict good position information for resistances in the range of 1-5 k{omega} and 150-{omega} preamplifier input impedance. Back-thinning of CMOS devices can possibly increase the fill factor to 100%, improve spectral sensitivity, and allow for the deposition of anti-reflective coatings after fabrication. We report initial results from back illuminating a CMOS SSPM, and single Geiger-mode avalanche photodiode (GPD) pixels, thinned to 50 {mu}m.

Propellant Flow Actuated Piezoelectric Igniter for Combustion Engines

Science.gov (United States)

Wollen, Mark A. (Inventor)

2018-01-01

A propellant flow actuated piezoelectric igniter device using one or more hammer balls retained by one or more magnets, or other retaining method, until sufficient fluid pressure is achieved in one or more charging chambers to release and accelerate the hammer ball, such that it impacts a piezoelectric crystal to produce an ignition spark. Certain preferred embodiments provide a means for repetitively capturing and releasing the hammer ball after it impacts one or more piezoelectric crystals, thereby oscillating and producing multiple, repetitive ignition sparks. Furthermore, an embodiment is presented for which oscillation of the hammer ball and repetitive impact to the piezoelectric crystal is maintained without the need for a magnet or other retaining mechanism to achieve this oscillating impact process.

Study on the sandwich piezoelectric ceramic ultrasonic transducer in thickness vibration

International Nuclear Information System (INIS)

Lin Shuyu; Tian Hua

2008-01-01

A sandwich piezoelectric ceramic ultrasonic transducer in thickness vibration is studied. The transducer consists of front and back metal masses, and coaxially segmented, thickness polarized piezoelectric ceramic thin rings. For this kind of sandwich piezoelectric transducers in thickness vibration, it is required that the lateral dimension of the transducer is sufficiently large compared with its longitudinal dimension so that no lateral displacements in the transducer can occur (laterally clamped). In this paper, the thickness vibration of the piezoelectric ceramic stack consisting of a number of identical piezoelectric ceramic thin rings is analysed and its electro-mechanical equivalent circuit is obtained. The resonance frequency equation for the sandwich piezoelectric ceramic ultrasonic transducer in thickness vibration is derived. Based on the frequency equation, two sandwich piezoelectric ceramic ultrasonic transducers are designed and manufactured, and their resonance frequencies are measured. It is shown that the measured resonance frequencies are in good agreement with the theoretical results. This kind of sandwich piezoelectric ultrasonic transducer is expected to be used in megasonic ultrasonic cleaning and sonochemistry where high power and high frequency ultrasound is needed

All-solution-processed flexible thin film piezoelectric nanogenerator

Energy Technology Data Exchange (ETDEWEB)

Chung, Sung Yun; Kim, Sunyoung; Kim, Kyongjun [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744 (Korea, Republic of); Lee, Ju-Hyuck; Kim, Sang-Woo [SKKU Advanced Institute of Nanotechnology, School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of); Kang, Chong-Yun; Yoon, Seok-Jin [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kim, Youn Sang [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744 (Korea, Republic of); Advanced Institutes of Convergence Technology, 864-1 Iui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-270 (Korea, Republic of)

2012-11-27

An all-solution-processed flexible thin film piezoelectric nanogenerator is demonstrated using reactive zinc hydroxo-condensation and a screen-printing method. The highly elastic thin film allows the piezoelectric energy to be generated through the mechanical rolling and muscle stretching of the piezoelectric unit. This flexible all solution-processed nanogenerator is promising for use in future energy harvesters such as wearable human patches and mobile electronics. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

Science.gov (United States)

Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

2010-12-15

A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging. Copyright © 2010 Elsevier B.V. All rights reserved.

CMOS-based avalanche photodiodes for direct particle detection

International Nuclear Information System (INIS)

Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

2007-01-01

Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

Cellulose Nanofibril Film as a Piezoelectric Sensor Material.

Science.gov (United States)

Rajala, Satu; Siponkoski, Tuomo; Sarlin, Essi; Mettänen, Marja; Vuoriluoto, Maija; Pammo, Arno; Juuti, Jari; Rojas, Orlando J; Franssila, Sami; Tuukkanen, Sampo

2016-06-22

Self-standing films (45 μm thick) of native cellulose nanofibrils (CNFs) were synthesized and characterized for their piezoelectric response. The surface and the microstructure of the films were evaluated with image-based analysis and scanning electron microscopy (SEM). The measured dielectric properties of the films at 1 kHz and 9.97 GHz indicated a relative permittivity of 3.47 and 3.38 and loss tangent tan δ of 0.011 and 0.071, respectively. The films were used as functional sensing layers in piezoelectric sensors with corresponding sensitivities of 4.7-6.4 pC/N in ambient conditions. This piezoelectric response is expected to increase remarkably upon film polarization resulting from the alignment of the cellulose crystalline regions in the film. The CNF sensor characteristics were compared with those of polyvinylidene fluoride (PVDF) as reference piezoelectric polymer. Overall, the results suggest that CNF is a suitable precursor material for disposable piezoelectric sensors, actuators, or energy generators with potential applications in the fields of electronics, sensors, and biomedical diagnostics.

PLZT-based photovoltaic Piezoelectric Transformer with light feedback

Energy Technology Data Exchange (ETDEWEB)

Kozielski, L [University of Silesia, Dep. Materials Sc, 2, Sniezna St. Sosnowiec, 41-200 Poland (Poland); Adamczyk, M [University of Silesia, Institute Phys., 4, Uniwersytecka St. Katowice, 40-007 Poland (Poland); Erhart, J, E-mail: lucjan.kozielski@us.edu.pl [Technical University of Liberec, Studencka St. 2, CZ-461 17 Liberec (Czech Republic)

2011-10-29

Piezoelectric Transformer (PT) converts an electrical AC input voltage into ultrasonic vibrations and reconverts back to an output as AC voltage. Hard lead zirconate titanate (PZT) ceramics is typically used for fabrications of such devices. In case of lanthaniun ion La{sup 3+} addition in PZT solid solution we can achieve piezoelectric ceramics with good transparency exhibiting both optical Pockels and Kerr effects. Values of these coefficients in the PLZT system are much bigger than in LiNbO{sub 3} or SBN single crystals. Among the various PLZT compositions 8/65/35, near the morphotropic boundary, exhibit large electrooptic effect and thus have found applications in light shutters and displays. In the present study we have investigated radial mode piezoelectric transformer based on optically transparent PLZT8/65/35 ceramics. The effect of the UV light generated photovoltage and photostriction on the efficiency and voltage step-up ratio of piezoelectric transformer have been demonstrated. Novel functions of this device is proposed by superimposing two sophistically coupled effects of piezoelectricity and photostriction.

The total dose effects on the 1/f noise of deep submicron CMOS transistors

International Nuclear Information System (INIS)

Hu Rongbin; Wang Yuxin; Lu Wu

2014-01-01

Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO 2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion. (semiconductor devices)

Piezoelectric Resonance Investigation of Zr-rich PZT at Room Temperature

NARCIS (Netherlands)

Cereceda, N.; Noheda, B.; Fernandez-del-Castillo, J.R.; Gonzalo, J.A.; Frutos, J. De

1999-01-01

We study the piezoelectric resonances in poled PZT ceramics by means of a microscopic model. It connects the microscopic vibrations of the ionic units, cooperatively producing the piezoelectric effect, with the macroscopic piezoelectric parameters. The behaviour at the resonance is well described in

Eigenstates of coupling factor and loss factor of piezoelectric ceramics

International Nuclear Information System (INIS)

Smits, J.G.

1978-01-01

A short history of piezoelectricity is given and its occurence in nature described. The physical background of piezoelectric loss is discussed together with how material coefficients like susceptibilities can be used to describe the relation between canonical variables and to determine the dissipation of energy. The piezoelectric coupling factor, the applications of the eigencoupling state, elastic and piezoelectric digenstates are dealt with. The composition of the measurement system is described and experimental values of ceramics given. (C.F.)

Tailored piezoelectric thin films for energy harvester

NARCIS (Netherlands)

Wan, X.

2013-01-01

Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

Piezoelectricity of a ferroelectric liquid crystal with a glass transition.

Science.gov (United States)

Jákli, A; Tóth-Katona, T; Scharf, T; Schadt, M; Saupe, A

2002-07-01

Pressure-electric (hydrostatic piezoelectric) measurements are reported on bookshelf textures of a ferroelectric smectic-C (Sm C*) liquid crystal with a glass transition. The continuous variation of a partially fluid state to the solid glass enables one to trace how the piezoelectric effect depends on the consistency of the material. It was observed that in the Sm C* samples with poled glass the piezoelectric constants are comparable to conventional piezoelectric crystals and poled piezoelectric polymers. This implies their application possibilities. The magnitude of the piezoelectric constant in the glassy state depends very much on the poling conditions. The studies indicate that there are two counteracting effects, which cancel each other out in the Sm C* phase near the glass transition. Our analysis indicates that the pressure-induced director tilt change has a dominating effect both in the fluid and the glassy Sm C* states.

Piezoelectric actuation of helicopter rotor blades

Science.gov (United States)

Lieven, Nicholas A. J.

2001-07-01

The work presented in this paper is concerned with the application of embedded piezo-electric actuators in model helicopter rotor blades. The paper outlines techniques to define the optimal location of actuators to excite particular modes of vibration whilst the blade is rotating. Using composite blades the distribution of strain energy is defined using a Finite Element model with imposed rotor-dynamic and aerodynamics loads. The loads are specified through strip theory to determine the position of maximum bending moment and thus the optimal location of the embedded actuators. The effectiveness of the technique is demonstrated on a 1/4 scale fixed cyclic pitch rotor head. Measurement of the blade displacement is achieved by using strain gauges. In addition a redundant piezo-electric actuator is used to measure the blades' response characteristics. The addition of piezo-electric devices in this application has been shown to exhibit adverse aeroelastic effects, such as counter mass balancing and increased drag. Methods to minimise these effects are suggested. The outcome of the paper is a method for defining the location and orientation of piezo-electric devices in rotor-dynamic applications.

PERFORMANCE OF DIFFERENT CMOS LOGIC STYLES FOR LOW POWER AND HIGH SPEED

OpenAIRE

Sreenivasa Rao.Ijjada; Ayyanna.G; G.Sekhar Reddy; Dr.V.Malleswara Rao

2011-01-01

Designing high-speed low-power circuits with CMOS technology has been a major research problem for many years. Several logic families have been proposed and used to improve circuit performance beyond that of conventional static CMOS family. Fast circuit families are becoming attractive in deep sub micron technologies since the performance benefits obtained from process scaling are decreasing as feature size decreases. This paper presents CMOS differential circuit families such as Dual rail do...

Piezoelectric properties and thermal stabilities of cobalt-modified potassium bismuth titanate

International Nuclear Information System (INIS)

Guo, Zhen-Lei; Wang, Chun-Ming; Zhao, Tian-Long; Yu, Si-Long; Cao, Zhao-Peng

2013-01-01

The cobalt-modified potassium bismuth titanate (K 0.5 Bi 4.5 Ti 4 O 15 , KBT) piezoelectric ceramics have been prepared using conventional solid–state reaction. X-ray diffraction analysis revealed that the cobalt-modified KBT ceramics have a pure four-layer (m = 4) Aurivillius-type structure. The dielectric, ferroelectric, and piezoelectric properties of cobalt-modified KBT ceramics were investigated in detail. The piezoelectric activities of KBT ceramics were significantly improved by the cobalt modification. The reasons for piezoelectric activities enhancement with cobalt modification were given. The piezoelectric coefficient d 33 and Curie temperature T c for the 5 mol% cobalt-modified KBT ceramics (KBT-Co5) were found to be 28 pC/N and 575 °C, respectively. The DC resistivity, frequency constants (N p and N t ), and electromechanical properties at elevated temperature were investigated, indicating the cobalt-modified KBT piezoelectric ceramics possess stable piezoelectric properties up to 500 °C. The results show the cobalt-modified KBT ceramics are potential materials for high temperature piezoelectric applications. - Highlights: • We examine the piezoelectric properties of the cobalt-modified K 0.5 Bi 4.5 Ti 4 O 15 . • A high level of piezoelectric activities (d 33 = 28 pC/N) are obtained. • High Curie temperature (T c = 575 °C) is acquired for the optimal composition. • The Co-modified K 0.5 Bi 4.5 Ti 4 O 15 is promising as high temperature materials

Enhanced active piezoelectric 0-3 nanocomposites fabricated through electrospun nanowires

International Nuclear Information System (INIS)

Feenstra, Joel; Sodano, Henry A.

2008-01-01

The use of monolithic piezoceramic materials in sensing and actuation applications has become quite common over the past decade. However, these materials have several properties that limit their application in practical systems. These materials are very brittle due to the ceramic nature of the monolithic material, making them vulnerable to accidental breakage during handling and bonding procedures. In addition, they have very poor ability to conform to curved surfaces and result in large add-on mass associated with using a typically lead-based ceramic. These limitations have motivated the development of alternative methods of applying the piezoceramic material, including piezoceramic fiber composites and piezoelectric 0-3 composites (also known as piezoelectric paint). Piezoelectric paint is desirable because it can be spayed or painted on and can be used with abnormal surfaces. However, the piezoelectric paint developed in prior studies has resulted in low coupling, limiting its application. In order to increase the coupling of the piezoelectric paint, this effort has investigated the use of piezoelectric nanowires rather than spherical piezoelectric particle, which are difficult to strain when embedded in a polymer matrix. The piezoceramic wires were electrospun from a barium titanate (BaTiO 3 ) sol gel to produce fibers with 500-1000 nm diameters and subsequently calcinated to acquire perovskite BaTiO 3 . An active nanocomposite paint was formed using the resulting piezoelectric wires and was compared to the same paint with piezoelectric nanoparticles. The results show that the piezoceramic wires produce 0-3 nanocomposites with as high as 300% increase in electromechanical coupling

Compatible Lie Bialgebras

International Nuclear Information System (INIS)

Wu Ming-Zhong; Bai Cheng-Ming

2015-01-01

A compatible Lie algebra is a pair of Lie algebras such that any linear combination of the two Lie brackets is a Lie bracket. We construct a bialgebra theory of compatible Lie algebras as an analogue of a Lie bialgebra. They can also be regarded as a “compatible version” of Lie bialgebras, that is, a pair of Lie bialgebras such that any linear combination of the two Lie bialgebras is still a Lie bialgebra. Many properties of compatible Lie bialgebras as the “compatible version” of the corresponding properties of Lie bialgebras are presented. In particular, there is a coboundary compatible Lie bialgebra theory with a construction from the classical Yang–Baxter equation in compatible Lie algebras as a combination of two classical Yang–Baxter equations in Lie algebras. Furthermore, a notion of compatible pre-Lie algebra is introduced with an interpretation of its close relation with the classical Yang–Baxter equation in compatible Lie algebras which leads to a construction of the solutions of the latter. As a byproduct, the compatible Lie bialgebras fit into the framework to construct non-constant solutions of the classical Yang–Baxter equation given by Golubchik and Sokolov. (paper)

Preparation and piezoelectric properties of (K0.5Na0.5)NbO3 lead-free piezoelectric ceramics with pressure-less sintering

International Nuclear Information System (INIS)

Du Hongliang; Li Zhimin; Tang Fusheng; Qu Shaobo; Pei Zhibin; Zhou Wancheng

2006-01-01

Lead-free piezoelectric ceramics (K 0.5 Na 0.5 )NbO 3 (abbreviated as KNN) with the relative density of 97.6% have been synthesized by press-less sintering owing to the careful control of processing conditions. The phase structure of KNN ceramics with different sintering temperature and heating rate was analyzed. Results show that the pure perovskite phase with orthorhombic symmetry is in all ceramics specimens. The effect of heating rate and sintering temperature on microstructure and piezoelectric properties of KNN ceramics was investigated. The densification behavior and piezoelectric properties of KNN ceramics were enhanced by improving heating rate and sintering temperature. Pure KNN ceramics sintered at 1120 deg. C with heating rate of 5 deg. C/min showed optimized densification and piezoelectric properties (ρ = 4.4 g/cm 3 , d 33 = 120 pC/N -1 , k p = 0.40 and T c = 400 deg. C). The results show that KNN is a promising candidate for lead-free piezoelectric ceramics

Fabrication and in vitro biological properties of piezoelectric bioceramics for bone regeneration

Science.gov (United States)

Tang, Yufei; Wu, Cong; Wu, Zixiang; Hu, Long; Zhang, Wei; Zhao, Kang

2017-02-01

The piezoelectric effect of biological piezoelectric materials promotes bone growth. However, the material should be subjected to stress before it can produce an electric charge that promotes bone repair and reconstruction conducive to fracture healing. A novel method for in vitro experimentation of biological piezoelectric materials with physiological load is presented. A dynamic loading device that can simulate the force of human motion and provide periodic load to piezoelectric materials when co-cultured with cells was designed to obtain a realistic expression of piezoelectric effect on bone repair. Hydroxyapatite (HA)/barium titanate (BaTiO3) composite materials were fabricated by slip casting, and their piezoelectric properties were obtained by polarization. The d33 of HA/BaTiO3 piezoelectric ceramics after polarization was 1.3 pC/N to 6.8 pC/N with BaTiO3 content ranging from 80% to 100%. The in vitro biological properties of piezoelectric bioceramics with and without cycle loading were investigated. When HA/BaTiO3 piezoelectric bioceramics were affected by cycle loading, the piezoelectric effect of BaTiO3 promoted the growth of osteoblasts and interaction with HA, which was better than the effect of HA alone. The best biocompatibility and bone-inducing activity were demonstrated by the 10%HA/90%BaTiO3 piezoelectric ceramics.

Experiments to Demonstrate Piezoelectric and Pyroelectric Effects

Science.gov (United States)

Erhart, Jirí

2013-01-01

Piezoelectric and pyroelectric materials are used in many current applications. The purpose of this paper is to explain the basic properties of pyroelectric and piezoelectric effects and demonstrate them in simple experiments. Pyroelectricity is presented on lead zirconium titanate (PZT) ceramics as an electric charge generated by the temperature…

Advances in Piezoelectric Systems: An Application-Based Approach

DEFF Research Database (Denmark)

Zsurzsan, Tiberiu-Gabriel

with their low manufacturing costs and high robustness has enabled wide-spread usage in applications ranging from simple spark lighters or pressure sensors to much more complicated energy harvesting systems and piezoelectric transformers. One governing property of piezoelectric devices is the existence....... These three distinct behaviors encountered in any piezoelectric device represents the ba- sis of discussion in the thesis. Therefore the present PhD dissertation is an application-based approach to researching all three behaviors individually, while nding solutions to the challenges encountered along the way...... bidirectional operation of a self-oscillating converter. Feasibility of using the converter in an MRI scanner is demonstrated. The third and nal behavior researched is the resistive behavior. This is widely encountered since most piezoelectric motors, ultrasonic baths and some energy harvesting systems operate...

Recent Progress on PZT Based Piezoelectric Energy Harvesting Technologies

Directory of Open Access Journals (Sweden)

Min-Gyu Kang

2016-02-01

Full Text Available Energy harvesting is the most effective way to respond to the energy shortage and to produce sustainable power sources from the surrounding environment. The energy harvesting technology enables scavenging electrical energy from wasted energy sources, which always exist everywhere, such as in heat, fluids, vibrations, etc. In particular, piezoelectric energy harvesting, which uses a direct energy conversion from vibrations and mechanical deformation to the electrical energy, is a promising technique to supply power sources in unattended electronic devices, wireless sensor nodes, micro-electronic devices, etc., since it has higher energy conversion efficiency and a simple structure. Up to now, various technologies, such as advanced materials, micro- and macro-mechanics, and electric circuit design, have been investigated and emerged to improve performance and conversion efficiency of the piezoelectric energy harvesters. In this paper, we focus on recent progress of piezoelectric energy harvesting technologies based on PbZrxTi1-xO3 (PZT materials, which have the most outstanding piezoelectric properties. The advanced piezoelectric energy harvesting technologies included materials, fabrications, unique designs, and properties are introduced to understand current technical levels and suggest the future directions of piezoelectric energy harvesting.

Piezoelectric Nanotube Array for Broadband High-Frequency Ultrasonic Transducer.

Science.gov (United States)

Liew, Weng Heng; Yao, Kui; Chen, Shuting; Tay, Francis Eng Hock

2018-03-01

Piezoelectric materials are vital in determining ultrasonic transducer and imaging performance as they offer the function for conversion between mechanical and electrical energy. Ultrasonic transducers with high-frequency operation suffer from performance degradation and fabrication difficulty of the demanded piezoelectric materials. Hence, we propose 1-D polymeric piezoelectric nanostructure with controlled nanoscale features to overcome the technical limitations of high-frequency ultrasonic transducers. For the first time, we demonstrate the integration of a well-aligned piezoelectric nanotube array to produce a high-frequency ultrasonic transducer with outstanding performance. We find that nanoconfinement-induced polarization orientation and unique nanotube structure lead to significantly improved piezoelectric and ultrasonic transducing performance over the conventional piezoelectric thin film. A large bandwidth, 126% (-6 dB), is achieved at high center frequency, 108 MHz. Transmission sensitivity of nanotube array is found to be 46% higher than that of the monolithic thin film transducer attributed to the improved electromechanical coupling effectiveness and impedance match. We further demonstrate high-resolution scanning, ultrasonic imaging, and photoacoustic imaging using the obtained nanotube array transducers, which is valuable for biomedical imaging applications in the future.

Piezoelectric materials involved in road traffic applications test system

International Nuclear Information System (INIS)

Vazquez Rodriguez, M.; Jimenez Martinez, F.; Frutos, J. de

2011-01-01

The test bench system described in this paper performs experiments on piezoelectric materials used in road traffic applications, covering a range between 14 and 170 km/h, which is considered enough for testing under standard traffic conditions. A software has been developed to control the three phase induction motor driver and to acquire all the measurement data of the piezoelectric materials. The mass over each systems axis can be selected, with a limit of 60 kg over each wheel. The test bench is used to simulate the real behaviour of buried piezoelectric cables in road traffic applications for both light and heavy vehicles. This new test bed system is a powerful research tool and can be applied to determine the optimal installation and configuration of the piezoelectric cable sensors and opens a new field of research: the study of energy harvesting techniques based on piezoelectric materials. (Author) 10 refs.

A review of piezoelectric polymers as functional materials for electromechanical transducers

International Nuclear Information System (INIS)

Ramadan, Khaled S; Evoy, S; Sameoto, D

2014-01-01

Polymer based MEMS and microfluidic devices have the advantages of mechanical flexibility, lower fabrication cost and faster processing over silicon based ones. Also, many polymer materials are considered biocompatible and can be used in biological applications. A valuable class of polymers for microfabricated devices is piezoelectric functional polymers. In addition to the normal advantages of polymers, piezoelectric polymers can be directly used as an active material in different transduction applications. This paper gives an overview of piezoelectric polymers based on their operating principle. This includes three main categories: bulk piezoelectric polymers, piezocomposites and voided charged polymers. State-of-the-art piezopolymers of each category are presented with a focus on fabrication techniques and material properties. A comparison between the different piezoelectric polymers and common inorganic piezoelectric materials (PZT, ZnO, AlN and PMN–PT) is also provided in terms of piezoelectric properties. The use of piezopolymers in different electromechanical devices is also presented. This includes tactile sensors, energy harvesters, acoustic transducers and inertial sensors. (topical review)

Hysteresis compensation for piezoelectric actuators in single-point diamond turning

Science.gov (United States)

Wang, Haifeng; Hu, Dejin; Wan, Daping; Liu, Hongbin

2006-02-01

In recent years, interests have been growing for fast tool servo (FTS) systems to increase the capability of existing single-point diamond turning machines. Although piezoelectric actuator is the most universal base of FTS system due to its high stiffness, accuracy and bandwidth, nonlinearity in piezoceramics limits both the static and dynamic performance of piezoelectric-actuated control systems evidently. To compensate the nonlinear hysteresis behavior of piezoelectric actuators, a hybrid model coupled with Preisach model and feedforward neural network (FNN) has been described. Since the training of FNN does not require a special calibration sequence, it is possible for on-line identification and real-time implementation with general operating data of a specific piezoelectric actuator. To describe the rate dependent behavior of piezoelectric actuators, a hybrid dynamic model was developed to predict the response of piezoelectric actuators in a wider range of input frequency. Experimental results show that a maximal error of less than 3% was accomplished by this dynamic model.

Piezoelectric peptide-based nanogenerator enhanced by single-electrode triboelectric nanogenerator

Directory of Open Access Journals (Sweden)

Vu Nguyen

2017-07-01

Full Text Available Peptide has recently been demonstrated as a sustainable and smart material for piezoelectric energy conversion. Although the power output was improved compared to other biomaterials, the use of a piezoelectric device alone can only capture the energy from the minute deformation in materials. In comparison, the triboelectric effect can convert mechanical energy from large motion. Consequently, utilizing both piezoelectric and triboelectric effects is of significant research interest due to their complementary energy conversion mechanisms. Here we demonstrated a hybrid nanogenerator that combined a peptide-based piezoelectric nanogenerator with a single-electrode triboelectric nanogenerator. Our device structure enabled the voltage and current outputs of each individual type of nanogenerator to be superposed in the hybrid nanogenerator, producing overall constructive outputs. The design of our device also enabled a simplified configuration of hybrid nanogenerator. This study is important not only for the enhancement of peptide-based piezoelectric device but also for the future design of hybrid piezoelectric and triboelectric nanogenerators.

CMOS SPDT switch for WLAN applications

International Nuclear Information System (INIS)

Bhuiyan, M A S; Reaz, M B I; Rahman, L F; Minhad, K N

2015-01-01

WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal. (paper)

Cmos spdt switch for wlan applications

Science.gov (United States)

Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

2015-04-01

WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

Theoretical and Experimental Study on Secondary Piezoelectric Effect Based on PZT-5

International Nuclear Information System (INIS)

Zhang, Z H; Sun, B Y; Shi, L P

2006-01-01

The purpose of this paper is to confirm the existence of secondary and multiple piezoelectric effect theoretically and experimentally. Based on Heckmann model showing the relationship among mechanical, electric and heat energy and the physical model on mechanical, electric, heat, and magnetic energy, theoretical analysis of multiple piezoelectric effect is made through four kinds of piezoelectric equations. Experimental research of secondary direct piezoelectric effect is conducted through adopting PZT-5 piles. The result of the experiment indicates that charge generated by secondary direct piezoelectric effect as well as displacement caused by first converse piezoelectric effect keeps fine linearity with the applied voltage

A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process

International Nuclear Information System (INIS)

Ji Xu; Li Zhihong; Li Juan; Wang Yangyuan; Xi Jianzhong

2008-01-01

This paper presents a post-CMOS process to monolithically integrate a piezoresistive cantilever for lateral force detection and signal processing circuitry. The fabrication process includes a standard CMOS process and one more lithography step to micromachine the cantilever structure in the post-CMOS process. The piezoresistors are doped in the CMOS process but defined in the post-CMOS micromachining process without any extra process required. A partially split cantilever configuration is developed for the lateral force detection. The piezoresistors are self-aligned to the split cantilever, and therefore the width of the beam is only limited by lithography. Consequently, this kind of cantilever potentially has a high resolution. The preliminary experimental results show expected performances of the fabricated piezoresistors and electronic circuits

Polarization and Piezoelectric Properties of a Nitrile Substituted Polyimide

Science.gov (United States)

Simpson, Joycelyn; Ounaies, Zoubeida; Fay, Catharine

1997-01-01

This research focuses on the synthesis and characterization of a piezoelectric (beta-CN)- APB/ODPA polyimide. The remanent polarization and piezoelectric d(sub 31) and g(sub 33) coefficients are reported to assess the effect of synthesis variations. Each of the materials exhibits a level of piezoelectricity which increases with temperature. The remanent polarization is retained at temperatures close to the glass transition temperature of the polyimide.

Acoustics of the piezo-electric pressure probe

Science.gov (United States)

Dutt, G. S.

1974-01-01

Acoustical properties of a piezoelectric device are reported for measuring the pressure in the plasma flow from an MPD arc. A description and analysis of the acoustical behavior in a piezoelectric probe is presented for impedance matching and damping. The experimental results are presented in a set of oscillographic records.

Energy harvesting from high-rise buildings by a piezoelectric harvester device

International Nuclear Information System (INIS)

Xie, X.D.; Wang, Q.; Wang, S.J.

2015-01-01

A novel piezoelectric technology of harvesting energy from high-rise buildings is developed. While being used to harness vibration energy of a building, the technology is also helpful to dissipate vibration of the building by the designed piezoelectric harvester as a tuned mass damper. The piezoelectric harvester device is made of two groups of series piezoelectric generators connected by a shared shaft. The shaft is driven by a linking rod hinged on a proof mass on the tip of a cantilever fixed on the roof of the building. The influences of some practical considerations, such as the mass ratio of the proof mass to the main structure, the ratios of the length and flexural rigidity of the cantilever to those of the main structure, on the root mean square (RMS) of the generated electric power and the energy harvesting efficiency of the piezoelectric harvester device are discussed. The research provides a new method for an efficient and practical energy harvesting from high-rise buildings by piezoelectric harvesters. - Highlights: • A new piezoelectric technology in energy harvesting from high-rise buildings is introduced. • A new mathematics model to calculate the energy harvested by the piezoelectric device is developed. • A novel efficient design of the piezoelectric harvester device in provided. • An electric power up to 432 MW under a seismic excitation at a frequency of 30 rad/s is achieved.

System and Method for Monitoring Piezoelectric Material Performance

Science.gov (United States)

Moses, Robert W. (Inventor); Fox, Christopher L. (Inventor); Fox, Melanie L. (Inventor); Chattin, Richard L. (Inventor); Shams, Qamar A. (Inventor); Fox, Robert L. (Inventor)

2007-01-01

A system and method are provided for monitoring performance capacity of a piezoelectric material that may form part of an actuator or sensor device. A switch is used to selectively electrically couple an inductor to the piezoelectric material to form an inductor-capacitor circuit. Resonance is induced in the inductor-capacitor circuit when the switch is operated to create the circuit. The resonance of the inductor-capacitor circuit is monitored with the frequency of the resonance being indicative of performance capacity of the device's piezoelectric material.

CMOS Pixel Development for the ATLAS Experiment at HL-LHC

CERN Document Server

Ristic, Branislav; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages (HV-MAPS) and high resistivity wafers (HR-MAPS) for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixels with monolithic or hybrid designs concerning their suitability for high rate, fast timing and high radiation operation at LHC. This paper will discuss recent results on the main candidate technologies and the current development towards a monolithic solution.

Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process...

CMOS voltage references an analytical and practical perspective

CERN Document Server

Kok, Chi-Wah

2013-01-01

A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

Electromechanical-Traffic Model of Compression-Based Piezoelectric Energy Harvesting

Directory of Open Access Journals (Sweden)

Kok B.C.

2016-01-01

Full Text Available Piezoelectric energy harvesting has advantages over other alternative sources due to its large power density, ease of applications, and capability to be fabricated at different scales: macro, micro, and nano. This paper presents an electromechanical-traffic model for roadway compression-based piezoelectric energy harvesting system. A two-degree-of-freedom (2-DOF electromechanical model has been developed for the piezoelectric energy harvesting unit to define its performance in power generation under a number of external excitations on road surface. Lead Zirconate Titanate (PZT-5H is selected as the piezoelectric material to be used in this paper due to its high Piezoelectric Charge Constant (d and Piezoelectric Voltage Constant (g values. The main source of vibration energy that has been considered in this paper is the moving vehicle on the road. The effect of various frequencies on possible generated power caused by different vibration characteristics of moving vehicle has been studied. A single unit of circle-shape Piezoelectric Cymbal Transducer (PCT with diameter of 32 mm and thickness of 0.3 mm be able to generate about 0.12 mW and 13 mW of electric power under 4 Hz and 20 Hz of excitation, respectively. The estimated power to be generated for multiple arrays of PCT is approximately 150 kW/ km. Thus, the developed electromechanical-traffic model has enormous potential to be used in estimating the macro scale of roadway power generation system.

BIOMINERALOGICAL INVESTIGATION OF APATITE PIEZOELECTRICITY

Directory of Open Access Journals (Sweden)

M. Pawlikowski

2016-01-01

Full Text Available Investigation of apatite piezoelectricity was conducted in order to assess piezoelectric properties of bone. In the first stage, mineralogical analysis of different apatite crystals, regarding their purity and fitness for the experiments was performed. After the crystals had been chosen, 0.8 mm-thick plates were cut, perpendicular and parallel to the crystallographic Z axis. The plates were then polished and dusted with gold. Electrodes were attached to the opposite surfaces of the plates with conductive glue. So prepared plates were hooked up to the EEG machine used for measuring electrical activity in the brain. The plates were then gently tapped to observe and register currents generated in them. Acquired data was processed by subtracting from the resulting graphs those generated by a hand movement, without tapping the plate. Results indicate that apatite plates have weak piezoelectric properties. Observed phenomenon may be translated to bone apatite, which would explain, at least partially, piezoelectric properties of bone. Acquired results suggest that there is a relation between the mechanical workload of bones (bone apatite and theirelectrical properties. Considering the massive internal surface of bones, they may be treated as a kind of internal “antenna” reacting not only to mechanical stimuli, but to changes in electromagnetic field as well. Observed phenomena no doubt significantly influence the biological processes occurring in bones and the whole human body.

Fundamental analysis of piezocatalysis process on the surfaces of strained piezoelectric materials.

Science.gov (United States)

Starr, Matthew B; Wang, Xudong

2013-01-01

Recently, the strain state of a piezoelectric electrode has been found to impact the electrochemical activity taking place between the piezoelectric material and its solution environment. This effect, dubbed piezocatalysis, is prominent in piezoelectric materials because the strain state and electronic state of these materials are strongly coupled. Herein we develop a general theoretical analysis of the piezocatalysis process utilizing well-established piezoelectric, semiconductor, molecular orbital and electrochemistry frameworks. The analysis shows good agreement with experimental results, reproducing the time-dependent voltage drop and H₂ production behaviors of an oscillating piezoelectric Pb(Mg₁/₃Nb₂/₃)O₃-32PbTiO₃ (PMN-PT) cantilever in deionized water environment. This study provides general guidance for future experiments utilizing different piezoelectric materials, such as ZnO, BaTiO₃, PbTiO₃, and PMN-PT. Our analysis indicates a high piezoelectric coupling coefficient and a low electrical conductivity are desired for enabling high electrochemical activity; whereas electrical permittivity must be optimized to balance piezoelectric and capacitive effects.

Latch-up and radiation integrated circuit--LURIC: a test chip for CMOS latch-up investigation

International Nuclear Information System (INIS)

Estreich, D.B.

1978-11-01

A CMOS integrated circuit test chip (Latch-Up and Radiation Integrated Circuit--LURIC) designed for CMOS latch-up and radiation effects research is described. The purpose of LURIC is (a) to provide information on the physics of CMOS latch-up, (b) to study the layout dependence of CMOS latch-up, and (c) to provide special latch-up test structures for the development and verification of a latch-up model. Many devices and test patterns on LURIC are also well suited for radiation effects studies. LURIC contains 86 devices and related test structures. A 12-layer mask set allows both metal gate CMOS and silicon gate ELA (Extended Linear Array) CMOS to be fabricated. Six categories of test devices and related test structures are included. These are (a) the CD4007 metal gate CMOS IC with auxiliary test structures, (b) ELA CMOS cells, (c) field-aided lateral pnp transistors, (d) p-well and substrate spreading resistance test structures, (e) latch-up test structures (simplified symmetrical latch-up paths), and (f) support test patterns (e.g., MOS capacitors, p + n diodes, MOS test transistors, van der Pauw and Kelvin contact resistance test patterns, etc.). A standard probe pattern array has been used on all twenty-four subchips for testing convenience

Electromechanical Modeling of Piezoelectric Energy Harvesters

OpenAIRE

Erturk, Alper

2009-01-01

Vibration-based energy harvesting has been investigated by several researchers over the last decade. The ultimate goal in this research field is to power small electronic components (such as wireless sensors) by using the vibration energy available in their environment. Among the basic transduction mechanisms that can be used for vibration-to-electricity conversion, piezoelectric transduction has received the most attention in the literature. Piezoelectric materials are preferred in energy ha...

LC Circuits for Diagnosing Embedded Piezoelectric Devices

Science.gov (United States)

Chattin, Richard L.; Fox, Robert Lee; Moses, Robert W.; Shams, Qamar A.

2005-01-01

A recently invented method of nonintrusively detecting faults in piezoelectric devices involves measurement of the resonance frequencies of inductor capacitor (LC) resonant circuits. The method is intended especially to enable diagnosis of piezoelectric sensors, actuators, and sensor/actuators that are embedded in structures and/or are components of multilayer composite material structures.

A low-power 802.11 AD compatible 60-GHz phase-locked loop in 65-NM CMOS

KAUST Repository

Cheema, Hammad M.; Arsalan, Muhammad; Salama, Khaled N.; Shamim, Atif

2015-01-01

A 60-GHz fundamental frequency phase locked loop (PLL) as part of a highly integrated system-on-chip transmitter with onchip memory and antenna is presented. As a result of localized optimization approach for each component, the PLL core components only consume 30.2 mW from a 1.2 V supply. A systematic design procedure to achieve high phase margin and wide locking range is presented. The reduction of parasitic and fixed capacitance contributions in the voltage controlled oscillator enables the coverage of the complete 802.11 ad frequency band from 57.2 to 65.8 GHz. A new 4-stage distribution network supplying the local oscillator (LO) signal to the mixer, the feedback loop and the external equipment is introduced. The prescaler based on the static frequency division approach is enhanced using shunt-peaking and asymmetric capacitive loading. The current mode logic based divider chain is optimized for low power and minimum silicon foot-print. A dead-zone free phase frequency detector, low leakage charge pump, and an integrated second-order passive filter completes the feedback loop. The PLL implemented in 65 nm CMOS process occupies only 0.6 mm2 of chip space and has a measured locking range from 56.8 to 66.5 GHz. The reference spurs are lower than -40 dBc and the in-band and out-of-band phase noise is -88.12 dBc/Hz and -117 dBc/Hz, respectively.

A low-power 802.11 AD compatible 60-GHz phase-locked loop in 65-NM CMOS

KAUST Repository

Cheema, Hammad M.

2015-01-23

A 60-GHz fundamental frequency phase locked loop (PLL) as part of a highly integrated system-on-chip transmitter with onchip memory and antenna is presented. As a result of localized optimization approach for each component, the PLL core components only consume 30.2 mW from a 1.2 V supply. A systematic design procedure to achieve high phase margin and wide locking range is presented. The reduction of parasitic and fixed capacitance contributions in the voltage controlled oscillator enables the coverage of the complete 802.11 ad frequency band from 57.2 to 65.8 GHz. A new 4-stage distribution network supplying the local oscillator (LO) signal to the mixer, the feedback loop and the external equipment is introduced. The prescaler based on the static frequency division approach is enhanced using shunt-peaking and asymmetric capacitive loading. The current mode logic based divider chain is optimized for low power and minimum silicon foot-print. A dead-zone free phase frequency detector, low leakage charge pump, and an integrated second-order passive filter completes the feedback loop. The PLL implemented in 65 nm CMOS process occupies only 0.6 mm2 of chip space and has a measured locking range from 56.8 to 66.5 GHz. The reference spurs are lower than -40 dBc and the in-band and out-of-band phase noise is -88.12 dBc/Hz and -117 dBc/Hz, respectively.