WorldWideScience

Sample records for cmos compatible magnetometers

  1. Batch Processing of CMOS Compatible Feedthroughs

    DEFF Research Database (Denmark)

    Rasmussen, F.E.; Heschel, M.; Hansen, Ole

    2003-01-01

    . The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...... of 2.5 pF. (C) 2003 Elsevier Science B.V. All rights reserved....

  2. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  3. Plasmonic Modulator Using CMOS Compatible Material Platform

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.

    2014-01-01

    In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device l ayout utilizes alternative plas monic materials such as tr ansparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation i...... for integration with existing insulator-metal-insu lator plasmonic waveguides as well as novel photonic/electronic hybrid circuits...

  4. CMOS-compatible spintronic devices: a review

    Science.gov (United States)

    Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

    2016-11-01

    For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

  5. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    KAUST Repository

    Saffih, Faycal; Elshurafa, Amro M.; Mohammad, Mohammad Ali; Nelson-Fitzpatrick, Nathan E.; Evoy, S.

    2012-01-01

    . The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly

  6. CMOS-compatible photonic devices for single-photon generation

    Directory of Open Access Journals (Sweden)

    Xiong Chunle

    2016-09-01

    Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  7. CMOS-compatible high-voltage integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  8. CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

    Science.gov (United States)

    Davidson, Bradley Darren

    This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

  9. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    KAUST Repository

    Saffih, Faycal

    2012-06-01

    In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

  10. Note: Commercial SQUID magnetometer-compatible NMR probe and its application for studying a quantum magnet.

    Science.gov (United States)

    Vennemann, T; Jeong, M; Yoon, D; Magrez, A; Berger, H; Yang, L; Živković, I; Babkevich, P; Rønnow, H M

    2018-04-01

    We present a compact nuclear magnetic resonance (NMR) probe which is compatible with a magnet of a commercial superconducting quantum interference device magnetometer and demonstrate its application to the study of a quantum magnet. We employ trimmer chip capacitors to construct an NMR tank circuit for low temperature measurements. Using a magnetic insulator MoOPO 4 with S = 1/2 (Mo 5+ ) as an example, we show that the T-dependence of the circuit is weak enough to allow the ligand-ion NMR study of magnetic systems. Our 31 P NMR results are compatible with previous bulk susceptibility and neutron scattering experiments and furthermore reveal unconventional spin dynamics.

  11. Note: Commercial SQUID magnetometer-compatible NMR probe and its application for studying a quantum magnet

    Science.gov (United States)

    Vennemann, T.; Jeong, M.; Yoon, D.; Magrez, A.; Berger, H.; Yang, L.; Živković, I.; Babkevich, P.; Rønnow, H. M.

    2018-04-01

    We present a compact nuclear magnetic resonance (NMR) probe which is compatible with a magnet of a commercial superconducting quantum interference device magnetometer and demonstrate its application to the study of a quantum magnet. We employ trimmer chip capacitors to construct an NMR tank circuit for low temperature measurements. Using a magnetic insulator MoOPO4 with S = 1/2 (Mo5+) as an example, we show that the T-dependence of the circuit is weak enough to allow the ligand-ion NMR study of magnetic systems. Our 31P NMR results are compatible with previous bulk susceptibility and neutron scattering experiments and furthermore reveal unconventional spin dynamics.

  12. Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility

    OpenAIRE

    Tanaka, Masahiro; Omura, Ichiro

    2012-01-01

    Deep trench gate is used for latest IGBT to improve device performance. By large difference from deep submicron CMOS structure, there is no process compatibility among CMOS device and trench gate IGBT. We propose IGBT scaling rule for shrinking IGBT cell structure both horizontally and vertically. The scaling rule is theoretically delivered by structure based equations. Device performance improvement was also predicted by TCAD simulations even with very shallow trench gate. The rule enables t...

  13. A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

    International Nuclear Information System (INIS)

    Li Chen; Liao Huailin; Huang Ru; Wang Yangyuan

    2008-01-01

    In this paper, a complementary metal-oxide semiconductor (CMOS)-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon (SGPS) trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications. (cross-disciplinary physics and related areas of science and technology)

  14. CMOS-compatible plenoptic detector for LED lighting applications.

    Science.gov (United States)

    Neumann, Alexander; Ghasemi, Javad; Nezhadbadeh, Shima; Nie, Xiangyu; Zarkesh-Ha, Payman; Brueck, S R J

    2015-09-07

    LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

  15. Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

    Science.gov (United States)

    Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

    2013-05-20

    We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

  16. Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line

    Science.gov (United States)

    León Pérez, Edgar A. A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader

    2018-05-01

    We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications. He is currently a Postdoctoral Researcher in the Institute of Nanotechnologies of Lyon (INL), INSA de Lyon, France, in the Electronics Department. His current research include indium oxide nanoparticles for non-volatile memory applications, and the integrations of these devices in CMOS BEOL.

  17. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    Science.gov (United States)

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-05

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

  18. Optical modulation techniques for analog signal processing and CMOS compatible electro-optic modulation

    Science.gov (United States)

    Gill, Douglas M.; Rasras, Mahmoud; Tu, Kun-Yii; Chen, Young-Kai; White, Alice E.; Patel, Sanjay S.; Carothers, Daniel; Pomerene, Andrew; Kamocsai, Robert; Beattie, James; Kopa, Anthony; Apsel, Alyssa; Beals, Mark; Mitchel, Jurgen; Liu, Jifeng; Kimerling, Lionel C.

    2008-02-01

    Integrating electronic and photonic functions onto a single silicon-based chip using techniques compatible with mass-production CMOS electronics will enable new design paradigms for existing system architectures and open new opportunities for electro-optic applications with the potential to dramatically change the management, cost, footprint, weight, and power consumption of today's communication systems. While broadband analog system applications represent a smaller volume market than that for digital data transmission, there are significant deployments of analog electro-optic systems for commercial and military applications. Broadband linear modulation is a critical building block in optical analog signal processing and also could have significant applications in digital communication systems. Recently, broadband electro-optic modulators on a silicon platform have been demonstrated based on the plasma dispersion effect. The use of the plasma dispersion effect within a CMOS compatible waveguide creates new challenges and opportunities for analog signal processing since the index and propagation loss change within the waveguide during modulation. We will review the current status of silicon-based electrooptic modulators and also linearization techniques for optical modulation.

  19. Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

    Science.gov (United States)

    Schatz, A.; Pantel, D.; Hanemann, T.

    2017-09-01

    Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

  20. CMOS-compatible batch processing of monolayer MoS2 MOSFETs

    Science.gov (United States)

    Xiong, Kuanchen; Kim, Hyun; Marstell, Roderick J.; Göritz, Alexander; Wipf, Christian; Li, Lei; Park, Ji-Hoon; Luo, Xi; Wietstruck, Matthias; Madjar, Asher; Strandwitz, Nicholas C.; Kaynak, Mehmet; Lee, Young Hee; Hwang, James C. M.

    2018-04-01

    Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.

  1. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.; Ghoneim, Mohamed T.; Droopad, Ravi; Hussain, Muhammad Mustafa

    2014-01-01

    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  2. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.

    2014-08-01

    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  3. Experimental demonstration of CMOS-compatible long-range dielectric-loaded surface plasmon-polariton waveguides (LR-DLSPPWs)

    DEFF Research Database (Denmark)

    Zektzer, Roy; Desiatov, Boris; Mazurski, Noa

    2015-01-01

    We demonstrate the design, fabrication and experimental characterization of long-range dielectric-loaded surface plasmon-polariton waveguides (LR-DLSPPWs) that are compatible with complementary metal-oxide semiconductor (CMOS) technology. The demonstrated waveguides feature good mode confinement...

  4. CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe

    National Research Council Canada - National Science Library

    An, S

    2001-01-01

    .... Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step...

  5. Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

    Energy Technology Data Exchange (ETDEWEB)

    Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

    2017-11-15

    The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Scalable production of sub-μm functional structures made of non-CMOS compatible materials on glass

    Science.gov (United States)

    Arens, Winfried

    2014-03-01

    Biophotonic and Life Science applications often require non-CMOS compatible materials to be patterned with sub μm resolution. Whilst the mass production of sub μm patterns is well established in the semiconductor industry, semiconductor fabs are limited to using CMOS compatible materials. IMT of Switzerland has implemented a fully automated manufacturing line that allows cost effective mass manufacturing of consumables for biophotonics in substrate materials like D263 glass or fused silica and layer/coating materials like Cr, SiO2, Cr2O5, Nb2O5, Ta2O5 and with some restrictions even gold with sub-μm patterns. The applied processes (lift-off and RIE) offer a high degree of freedom in the design of the consumable.

  7. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Science.gov (United States)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  8. Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process

    Science.gov (United States)

    Saleem, Amin M.; Andersson, Rickard; Desmaris, Vincent; Enoksson, Peter

    2018-01-01

    Complete miniaturized on-chip integrated solid-state capacitors have been fabricated based on conformal coating of vertically aligned carbon nanofibers (VACNFs), using a CMOS temperature compatible microfabrication processes. The 5 μm long VACNFs, operating as electrode, are grown on a silicon substrate and conformally coated by aluminum oxide dielectric using atomic layer deposition (ALD) technique. The areal (footprint) capacitance density value of 11-15 nF/mm2 is realized with high reproducibility. The CMOS temperature compatible microfabrication, ultra-low profile (less than 7 μm thickness) and high capacitance density would enables direct integration of micro energy storage devices on the active CMOS chip, multi-chip package and passives on silicon or glass interposer. A model is developed to calculate the surface area of VACNFs and the effective capacitance from the devices. It is thereby shown that 71% of surface area of the VACNFs has contributed to the measured capacitance, and by using the entire area the capacitance can potentially be increased.

  9. Growth and optical properties of CMOS-compatible silicon nanowires for photonic devices

    Science.gov (United States)

    Guichard, Alex Richard

    Silicon (Si) is the dominant semiconductor material in both the microelectronic and photovoltaic industries. Despite its poor optical properties, Si is simply too abundant and useful to be completely abandoned in either industry. Since the initial discovery of efficient room temperature photoluminescence (PL) from porous Si and the following discoveries of PL and time-resolved optical gain from Si nanocrystals (Si-nc) in SiO2, many groups have studied the feasibility of making Si-based, CMOS-compatible electroluminescent devices and electrically pumped lasers. These studies have shown that for Si-ne sizes below about 10 nm, PL can be attributed to radiative recombination of confined excitons and quantum efficiencies can reach 90%. PL peak energies are blue-shifted from the bulk Si band edge of 1.1 eV due to the quantum confinement effect and PL decay lifetimes are on mus timescales. However, many unanswered questions still exist about both the ease of carrier injection and various non-radiative and loss mechanisms that are present. A potential alternative material system to porous Si and Si-nc is Si nanowires (SiNWs). In this thesis, I examine the optical properties of SiNWs with diameters in the range of 3-30 nm fabricated by a number of compound metal oxide semiconductor (CMOS) compatible fabrication techniques including Chemical Vapor Deposition on metal nanoparticle coated substrates, catalytic wet etching of bulk Si and top-down electron-beam lithographic patterning. Using thermal oxidation and etching, we can increase the degree of confinement in the SiNWs. I demonstrate PL peaked in the visible and near-infrared (NIR) wavelength ranges that is tunable by controlling the crystalline SiNW core diameter, which is measured with dark field and high-resolution transmission electron microscopy. PL decay lifetimes of the SiNWs are on the order of 50 mus after proper surface passivation, which suggest that the PL is indeed from confined carriers in the SiNW cores

  10. Design and fabrication of a CMOS-compatible MHP gas sensor

    Directory of Open Access Journals (Sweden)

    Ying Li

    2014-03-01

    Full Text Available A novel micro-hotplate (MHP gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO2 film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3% in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.

  11. A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

    Science.gov (United States)

    Chien, W. C.; Chen, Y. C.; Lai, E. K.; Lee, F. M.; Lin, Y. Y.; Chuang, Alfred T. H.; Chang, K. P.; Yao, Y. D.; Chou, T. H.; Lin, H. M.; Lee, M. H.; Shih, Y. H.; Hsieh, K. Y.; Lu, Chih-Yuan

    2011-03-01

    Tungsten oxide (WO X ) resistive memory (ReRAM), a two-terminal CMOS compatible nonvolatile memory, has shown promise to surpass the existing flash memory in terms of scalability, switching speed, and potential for 3D stacking. The memory layer, WO X , can be easily fabricated by down-stream plasma oxidation (DSPO) or rapid thermal oxidation (RTO) of W plugs universally used in CMOS circuits. Results of conductive AFM (C-AFM) experiment suggest the switching mechanism is dominated by the REDOX (Reduction-oxidation) reaction—the creation of conducting filaments leads to a low resistance state and the rupturing of the filaments results in a high resistance state. Our experimental results show that the reactions happen at the TE/WO X interface. With this understanding in mind, we proposed two approaches to boost the memory performance: (i) using DSPO to treat the RTO WO X surface and (ii) using Pt TE, which forms a Schottky barrier with WO X . Both approaches, especially the latter, significantly reduce the forming current and enlarge the memory window.

  12. CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

    Science.gov (United States)

    Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

    2015-12-01

    Frequency reference and timing control devices are ubiquitous in electronic applications. There is at least one resonator required for each of this device. Currently electromechanical resonators such as crystal resonator, ceramic resonator are the ultimate choices. This tendency will probably keep going for many more years. However, current market demands for small size, low power consumption, cheap and reliable products, has divulged many limitations of this type of resonators. They cannot be integrated into standard CMOS (Complement metaloxide- semiconductor) IC (Integrated Circuit) due to material and fabrication process incompatibility. Currently, these devices are off-chip and they require external circuitries to interface with the ICs. This configuration significantly increases the overall size and cost of the entire electronic system. In addition, extra external connection, especially at high frequency, will potentially create negative impacts on the performance of the entire system due to signal degradation and parasitic effects. Furthermore, due to off-chip packaging nature, these devices are quite expensive, particularly for high frequency and high quality factor devices. To address these issues, researchers have been intensively studying on an alternative for type of resonator by utilizing the new emerging MEMS (Micro-electro-mechanical systems) technology. Recent progress in this field has demonstrated a MEMS resonator with resonant frequency of 2.97 GHz and quality factor (measured in vacuum) of 42900. Despite this great achievement, this prototype is still far from being fully integrated into CMOS system due to incompatibility in fabrication process and its high series motional impedance. On the other hand, fully integrated MEMS resonator had been demonstrated but at lower frequency and quality factor. We propose a design and fabrication process for a low cost, high frequency and a high quality MEMS resonator, which can be integrated into a standard

  13. PARAMETERIZED LAYOUT SYNTHESIS OF A CMOS-COMPATIBLE SCANNING MICROMIRROR WITH ELECTROTHERMAL ACTUATION AND BIMODAL RESONANT BEHAVIOR

    Directory of Open Access Journals (Sweden)

    Sergio Camacho León

    2011-01-01

    Full Text Available Este trabajo presenta una metodología de síntesis de parámetros para la automatización del diseño de un microespejo de escaneado compatible CMOS con comportamiento resonante bimodal. El microespejo está suspendido por actuadores térmicos bimorfos en voladizo con accionamiento fuera del plano. La metodología propone la optimización de espesores y el escaneo en el segundo modo de resonancia como estrategias para superar el conflicto característico entre el desempeño estático y dinámico del dispositivo. El objetivo es obtener automáticamente los parámetros de diseño del dispositivo que, de manera concurrente, maximizan el ángulo de rotación, minimizan el consumo de energía y satisfacen tanto las limitaciones de fabricación de un proceso CMOS estándar como las especificaciones de alto nivel para la posición del eje de rotación en el segundo modo de resonancia, la frecuencia de escaneado y el voltaje máximo de actuación. La metodología utiliza un espacio de diseño de nivel intermedio, definido por la razón de resistencia térmica a resistencia eléctrica del dispositivo a temperatura ambiente, para acoplar las restricciones del esfuerzo térmico máximo con la densidad de corriente eléctrica máxima de los materiales CMOS. El procedimiento de evaluación de funciones objetivos se desarrolla sobre la base de un modelo de elementos concentrados de la resistencia térmica del dispositivo para explorar sistemáticamente el espacio de diseño utilizando variaciones paramétricas. La metodología se aplica para diseñar un microescáner que tiene aplicaciones en sistemas imagenológicos de coherencia óptica. El desempeño del microescáner sintetizado es verificado por simulaciones mediante el método de elementos finitos. Los resultados obtenidos numéricamente presentan un buen ajuste con las especificaciones de alto nivel.

  14. Which Photodiode to Use: A Comparison of CMOS-Compatible Structures.

    Science.gov (United States)

    Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

    2009-07-01

    While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n(+)/p-sub, n-well/p-sub and p(+)/n-well/p-sub. All structures were fabricated in a 0.5 mum 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated-the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well/p-sub diode performed best in terms of sensitivity (an improvement of 3.5 x and 1.6 x over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1.5 x and 1.2 x improvement over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) while the p(+)/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity.

  15. Frequency notching applicable to CMOS implementation of WLAN compatible IR-UWB pulse generators

    DEFF Research Database (Denmark)

    Shen, Ming; Mikkelsen, Jan H.; Jiang, Hao

    2012-01-01

    Due to overlapping frequency bands, IEEE 802.11a WLAN and Ultra Wide-Band systems potentially suffer from mutual interference problems. This paper proposes a method for inserting frequency notches into the IR-UWB power spectrum to ensure compatibility with WLAN systems. In contrast to conventional...... approaches where complicated waveform equations are used, the proposed method uses a dual-pulse frequency notching approach to achieve frequency suppression in selected bands. The proposed method offers a solution that is generically applicable to UWB pulse generators using different pulse waveforms...

  16. CMOS-compatible silicon nanowire field-effect transistors for ultrasensitive and label-free microRNAs sensing.

    Science.gov (United States)

    Lu, Na; Gao, Anran; Dai, Pengfei; Song, Shiping; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-05-28

    MicroRNAs (miRNAs) have been regarded as promising biomarkers for the diagnosis and prognosis of early-stage cancer as their expression levels are associated with different types of human cancers. However, it is a challenge to produce low-cost miRNA sensors, as well as retain a high sensitivity, both of which are essential factors that must be considered in fabricating nanoscale biosensors and in future biomedical applications. To address such challenges, we develop a complementary metal oxide semiconductor (CMOS)-compatible SiNW-FET biosensor fabricated by an anisotropic wet etching technology with self-limitation which provides a much lower manufacturing cost and an ultrahigh sensitivity. This nanosensor shows a rapid (< 1 minute) detection of miR-21 and miR-205, with a low limit of detection (LOD) of 1 zeptomole (ca. 600 copies), as well as an excellent discrimination for single-nucleotide mismatched sequences of tumor-associated miRNAs. To investigate its applicability in real settings, we have detected miRNAs in total RNA extracted from lung cancer cells as well as human serum samples using the nanosensors, which demonstrates their potential use in identifying clinical samples for early diagnosis of cancer. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications

    Science.gov (United States)

    Kim, Seonyeong; Shin, Somyeong; Kim, Taekwang; Du, Hyewon; Song, Minho; Kim, Ki Soo; Cho, Seungmin; Lee, Sang Wook; Seo, Sunae

    2017-04-01

    The modulation of charge carrier concentration allows us to tune the Fermi level (E F) of graphene thanks to the low electronic density of states near the E F. The introduced metal oxide thin films as well as the modified transfer process can elaborately maneuver the amounts of charge carrier concentration in graphene. The self-encapsulation provides a solution to overcome the stability issues of metal oxide hole dopants. We have manipulated systematic graphene p-n junction structures for electronic or photonic application-compatible doping methods with current semiconducting process technology. We have demonstrated the anticipated transport properties on the designed heterojunction devices with non-destructive doping methods. This mitigates the device architecture limitation imposed in previously known doping methods. Furthermore, we employed E F-modulated graphene source/drain (S/D) electrodes in a low dimensional transition metal dichalcogenide field effect transistor (TMDFET). We have succeeded in fulfilling n-type, ambipolar, or p-type field effect transistors (FETs) by moving around only the graphene work function. Besides, the graphene/transition metal dichalcogenide (TMD) junction in either both p- and n-type transistor reveals linear voltage dependence with the enhanced contact resistance. We accomplished the complete conversion of p-/n-channel transistors with S/D tunable electrodes. The E F modulation using metal oxide facilitates graphene to access state-of-the-art complimentary-metal-oxide-semiconductor (CMOS) technology.

  18. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.; Hanna, Amir; Hussain, Muhammad Mustafa

    2014-01-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  19. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-08-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  20. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

    Science.gov (United States)

    Yuryev, Vladimir A; Arapkina, Larisa V

    2011-09-05

    Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

  1. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001 surface: nucleation, morphology, and CMOS compatibility

    Directory of Open Access Journals (Sweden)

    Yuryev Vladimir

    2011-01-01

    Full Text Available Abstract Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001 surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C and high (≳600°C temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001 surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001 quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

  2. Very low drift and high sensitivity of nanocrystal-TiO2 sensing membrane on pH-ISFET fabricated by CMOS compatible process

    International Nuclear Information System (INIS)

    Bunjongpru, W.; Sungthong, A.; Porntheeraphat, S.; Rayanasukha, Y.; Pankiew, A.; Jeamsaksiri, W.; Srisuwan, A.; Chaisriratanakul, W.; Chaowicharat, E.; Klunngien, N.; Hruanun, C.; Poyai, A.; Nukeaw, J.

    2013-01-01

    High sensitivity and very low drift rate pH sensors are successfully prepared by using nanocrystal-TiO 2 as sensing membrane of ion sensitive field effect transistor (ISFET) device fabricated via CMOS process. This paper describes the physical properties and sensing characteristics of the TiO 2 membrane prepared by annealing Ti and TiN thin films that deposited on SiO 2 /p-Si substrates through reactive DC magnetron sputtering system. The X-ray diffraction, scanning electron microscopy and Auger electron spectroscopy were used to investigate the structural and morphological features of deposited films after they had been subjected to annealing at various temperatures. The experimental results are interpreted in terms of the effects of amorphous-to-crystalline phase transition and subsequent oxidation of the annealed films. The electrolyte–insulator–semiconductor (EIS) device incorporating Ti-O-N membrane that had been obtained by annealing of TiN thin film at 850 °C exhibited a higher sensitivity (57 mV/pH), a higher linearity (1), a lower hysteresis voltage (1 mV in the pH cycle of 7 → 4 → 7 → 10 → 7), and a smaller drift rate (0.246 mV/h) than did those devices prepared at the other annealing temperatures. Furthermore, this pH-sensing device fabrication process is fully compatible with CMOS fabrication process technology.

  3. Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

    Science.gov (United States)

    Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

    2017-11-08

    Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

  4. Surface-micromachined Bragg Reflectors Based on Multiple Airgap/SiO2 Layers for CMOS-compatible Fabry-perot Filters in the UV-visible Spectral Range

    NARCIS (Netherlands)

    Ghaderi, M.; Ayerden, N.P.; De Graaf, G.; Wolffenbuttel, R.F.

    2014-01-01

    In CMOS-compatible optical filter designs, SiO2 is often used as the low-index material, limiting the optical contrast (nHi/nLo) to about 2. Using the air as low-index material improves the optical contrast by about 50%, thus increasing the reflectivity and bandwidth at a given design complexity.

  5. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    Science.gov (United States)

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

  6. A low-power 802.11 AD compatible 60-GHz phase-locked loop in 65-NM CMOS

    KAUST Repository

    Cheema, Hammad M.; Arsalan, Muhammad; Salama, Khaled N.; Shamim, Atif

    2015-01-01

    A 60-GHz fundamental frequency phase locked loop (PLL) as part of a highly integrated system-on-chip transmitter with onchip memory and antenna is presented. As a result of localized optimization approach for each component, the PLL core components only consume 30.2 mW from a 1.2 V supply. A systematic design procedure to achieve high phase margin and wide locking range is presented. The reduction of parasitic and fixed capacitance contributions in the voltage controlled oscillator enables the coverage of the complete 802.11 ad frequency band from 57.2 to 65.8 GHz. A new 4-stage distribution network supplying the local oscillator (LO) signal to the mixer, the feedback loop and the external equipment is introduced. The prescaler based on the static frequency division approach is enhanced using shunt-peaking and asymmetric capacitive loading. The current mode logic based divider chain is optimized for low power and minimum silicon foot-print. A dead-zone free phase frequency detector, low leakage charge pump, and an integrated second-order passive filter completes the feedback loop. The PLL implemented in 65 nm CMOS process occupies only 0.6 mm2 of chip space and has a measured locking range from 56.8 to 66.5 GHz. The reference spurs are lower than -40 dBc and the in-band and out-of-band phase noise is -88.12 dBc/Hz and -117 dBc/Hz, respectively.

  7. A low-power 802.11 AD compatible 60-GHz phase-locked loop in 65-NM CMOS

    KAUST Repository

    Cheema, Hammad M.

    2015-01-23

    A 60-GHz fundamental frequency phase locked loop (PLL) as part of a highly integrated system-on-chip transmitter with onchip memory and antenna is presented. As a result of localized optimization approach for each component, the PLL core components only consume 30.2 mW from a 1.2 V supply. A systematic design procedure to achieve high phase margin and wide locking range is presented. The reduction of parasitic and fixed capacitance contributions in the voltage controlled oscillator enables the coverage of the complete 802.11 ad frequency band from 57.2 to 65.8 GHz. A new 4-stage distribution network supplying the local oscillator (LO) signal to the mixer, the feedback loop and the external equipment is introduced. The prescaler based on the static frequency division approach is enhanced using shunt-peaking and asymmetric capacitive loading. The current mode logic based divider chain is optimized for low power and minimum silicon foot-print. A dead-zone free phase frequency detector, low leakage charge pump, and an integrated second-order passive filter completes the feedback loop. The PLL implemented in 65 nm CMOS process occupies only 0.6 mm2 of chip space and has a measured locking range from 56.8 to 66.5 GHz. The reference spurs are lower than -40 dBc and the in-band and out-of-band phase noise is -88.12 dBc/Hz and -117 dBc/Hz, respectively.

  8. Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

    Science.gov (United States)

    Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

    2018-05-01

    Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

  9. FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO2/Si Multilayer Structure

    Directory of Open Access Journals (Sweden)

    Muhammad Zubair Aslam

    2018-05-01

    Full Text Available A Finite Element Method (FEM simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO2/Si Surface Acoustic Wave (SAW sensor to low concentrations of Volatile Organic Compounds (VOCs, that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS compatible AlN/SiO2/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO2 layers’ thicknesses over phase velocities and electromechanical coupling coefficients (k2 of two SAW modes (i.e., Rayleigh and Sezawa is analyzed and the optimal thicknesses of AlN and SiO2 layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.

  10. Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

    Science.gov (United States)

    Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

    2018-03-01

    Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

  11. CMOS-compatible fabrication of top-gated field-effect transistor silicon nanowire-based biosensors

    International Nuclear Information System (INIS)

    Ginet, Patrick; Akiyama, Sho; Takama, Nobuyuki; Fujita, Hiroyuki; Kim, Beomjoon

    2011-01-01

    Field-effect transistor (FET) nanowire-based biosensors are very promising tools for medical diagnosis. In this paper, we introduce a simple method to fabricate FET silicon nanowires using only standard microelectromechanical system (MEMS) processes. The key steps of our fabrication process were a local oxidation of silicon (LOCOS) and anisotropic KOH etchings that enabled us to reduce the width of the initial silicon structures from 10 µm to 170 nm. To turn the nanowires into a FET, a top-gate electrode was patterned in gold next to them in order to apply the gate voltage directly through the investigated liquid environment. An electrical characterization demonstrated the p-type behaviour of the nanowires. Preliminary chemical sensing tested the sensitivity to pH of our device. The effect of the binding of streptavidin on biotinylated nanowires was monitored in order to evaluate their biosensing ability. In this way, streptavidin was detected down to a 100 ng mL −1 concentration in phosphate buffered saline by applying a gate voltage less than 1.2 V. The use of a top-gate electrode enabled the detection of biological species with only very low voltages that were compatible with future handheld-requiring applications. We thus demonstrated the potential of our devices and their fabrication as a solution for the mass production of efficient and reliable FET nanowire-based biological sensors

  12. Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

    KAUST Repository

    Chen, Min Cheng

    2014-12-01

    Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

  13. Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

    KAUST Repository

    Chen, Min Cheng; Lin, Chia Yi; Li, Kai Hsin; Li, Lain-Jong; Chen, Chang Hsiao; Chuang, Cheng Hao; Lee, Ming Dao; Chen, Yi Ju; Hou, Yun Fang; Lin, Chang Hsien; Chen, Chun Chi; Wu, Bo Wei; Wu, Cheng San; Yang, Ivy; Lee, Yao Jen; Yeh, Wen Kuan; Wang, Tahui; Yang, Fu Liang; Hu, Chenming

    2014-01-01

    Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

  14. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  15. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.; Sevilla, Galo T.; Velling, Seneca J.; Cordero, Marlon D.; Hussain, Muhammad Mustafa

    2017-01-01

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  16. The MASCOT Magnetometer

    Science.gov (United States)

    Herčík, David; Auster, Hans-Ulrich; Blum, Jürgen; Fornaçon, Karl-Heinz; Fujimoto, Masaki; Gebauer, Kathrin; Güttler, Carsten; Hillenmaier, Olaf; Hördt, Andreas; Liebert, Evelyn; Matsuoka, Ayako; Nomura, Reiko; Richter, Ingo; Stoll, Bernd; Weiss, Benjamin P.; Glassmeier, Karl-Heinz

    2017-07-01

    The Mobile Asteroid Scout (MASCOT) is a small lander on board the Hayabusa2 mission of the Japan Aerospace Exploration Agency to the asteroid 162173 Ryugu. Among the instruments on MASCOT is a fluxgate magnetometer, the MASCOT Magnetometer (MasMag). The magnetometer is a lightweight (˜280 g) and low power (˜0.5 W) triaxial fluxgate magnetometer. Magnetic field measurements during the landing period and during the surface operational phase shall provide information about any intrinsic magnetic field of the asteroid and its remanent magnetization. This could provide important constraints on planet formation and the thermal and aqueous evolution of primitive asteroids.

  17. CMOS dot matrix microdisplay

    Science.gov (United States)

    Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

    2011-03-01

    Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

  18. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

  19. Tuned cavity magnetometer sensitivity.

    Energy Technology Data Exchange (ETDEWEB)

    Okandan, Murat; Schwindt, Peter

    2009-09-01

    We have developed a high sensitivity (magnetometer that utilizes a novel optical (interferometric) detection technique. Further miniaturization and low-power operation are key advantages of this magnetometer, when compared to systems using SQUIDs which require liquid Helium temperatures and associated overhead to achieve similar sensitivity levels.

  20. Ultralow-loss CMOS copper plasmonic waveguides

    DEFF Research Database (Denmark)

    Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

    2016-01-01

    with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

  1. Tuned optical cavity magnetometer

    Science.gov (United States)

    Okandan, Murat; Schwindt, Peter

    2010-11-02

    An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.

  2. GOES Space Environment Monitor, Magnetometer

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Three orthogonal flux-gate magnetometer elements, (spinning twin fluxgate magnetometer prior to GOES-8) provide magnetic field measurements in three mutually...

  3. Scalar magnetometers for space applications

    DEFF Research Database (Denmark)

    Primdahl, Fritz

    A survey of existing instrumentation and developments is presented emphasizing instrumentation for in-flight calibration of vector magnetometers on magnetic mapping missions. Proton free or forced precession magnetometers are at the focus as calibration references, because the proton gyromagnetic...

  4. On the integration of ultrananocrystalline diamond (UNCD with CMOS chip

    Directory of Open Access Journals (Sweden)

    Hongyi Mi

    2017-03-01

    Full Text Available A low temperature deposition of high quality ultrananocrystalline diamond (UNCD film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

  5. The Magnetospheric Multiscale Magnetometers

    Science.gov (United States)

    Russell, C. T.; Anderson, B. J.; Baumjohann, W.; Bromund, K. R.; Dearborn, D.; Fischer, D.; Le, G.; Leinweber, H. K.; Leneman, D.; Magnes, W.; hide

    2014-01-01

    The success of the Magnetospheric Multiscale mission depends on the accurate measurement of the magnetic field on all four spacecraft. To ensure this success, two independently designed and built fluxgate magnetometers were developed, avoiding single-point failures. The magnetometers were dubbed the digital fluxgate (DFG), which uses an ASIC implementation and was supplied by the Space Research Institute of the Austrian Academy of Sciences and the analogue magnetometer (AFG) with a more traditional circuit board design supplied by the University of California, Los Angeles. A stringent magnetic cleanliness program was executed under the supervision of the Johns Hopkins University,s Applied Physics Laboratory. To achieve mission objectives, the calibration determined on the ground will be refined in space to ensure all eight magnetometers are precisely inter-calibrated. Near real-time data plays a key role in the transmission of high-resolution observations stored onboard so rapid processing of the low-resolution data is required. This article describes these instruments, the magnetic cleanliness program, and the instrument pre-launch calibrations, the planned in-flight calibration program, and the information flow that provides the data on the rapid time scale needed for mission success.

  6. THOR Fluxgate Magnetometer (MAG)

    Science.gov (United States)

    Nakamura, Rumi; Eastwood, Jonathan; Magnes, Werner; Carr, Christopher, M.; O'Brien, Helen, L.; Narita, Yasuhito; K, Chen, Christopher H.; Berghofer, Gerhard; Valavanoglou, Aris; Delva, Magda; Plaschke, Ferdinand; Cupido, Emanuele; Soucek, Jan

    2017-04-01

    Turbulence Heating ObserveR (THOR) is the first mission ever flown in space dedicated to plasma turbulence. The fluxgate Magnetometer (MAG) measures the background to low frequency magnetic field. The high sensitivity measurements of MAG enable to characterize the nature of turbulent fluctuations as well as the large-scale context. MAG will provide the reference system for determining anisotropy of field fluctuations, pitch-angle and gyro-phase of particles. The design of the magnetometer consists of two tri-axial sensors and the related magnetometer electronics; the electronics are hosted on printed circuit boards in the common electronics box of the fields and wave processor (FWP). A fully redundant two- sensor system mounted on a common boom and the new miniaturized low noise design based on MMS and Solar Orbiter instruments enable accurate measurement throughout the region of interest for THOR science. The usage of the common electronics hosted by FWP guarantees to fulfill the required timing accuracy with other fields measurements. These improvements are important to obtain precise measurements of magnetic field, which is essential to estimate basic plasma parameters and correctly identify the spatial and temporal scales of the turbulence. Furthermore, THOR MAG provides high quality data with sufficient overlap with the Search Coil Magnetometer (SCM) in frequency space to obtain full coverage of the wave forms over all the frequencies necessary to obtain the full solar wind turbulence spectrum from MHD to kinetic range with sufficient accuracy. We discuss the role of MAG in THOR key science questions and present the new developments during Phase A such as the finalised instrument design, MAG relevant requirement, and new calibraion schemes.

  7. The IRM fluxgate magnetometer

    Science.gov (United States)

    Luehr, H.; Kloecker, N.; Oelschlaegel, W.; Haeusler, B.; Acuna, M.

    1985-01-01

    This report describes the three-axis fluxgate magnetometer instrument on board the AMPTE IRM spacecraft. Important features of the instrument are its wide dynamic range (0.1-60,000 nT), a high resolution (16-bit analog to digital conversion) and the capability to operate automatically or via telecommand in two gain states. In addition, the wave activity is monitored in all three components up to 50 Hz. Inflight checkout proved the nominal functioning of the instrument in all modes.

  8. Cryostats for SQUID magnetometers

    International Nuclear Information System (INIS)

    Testard, O.A.; Locatelli, M.

    1982-05-01

    A non metallic and non magnetic cryostat, with a very low thermal budget and a container type autonomy was developed, to condition S.Q.U.I.D. magnetometers which maximum sensitivity reaches 10 -14 Tesla Hertzsup(-1/2). This instrumentation puts in hand new concepts of composite materials, thermal shock and vibration resistant, multilayer thermal radiative insulation also to the prouve of vibrations with thermal equivalent emissivity lower than 10 -3

  9. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2014-01-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

  10. Scalar Calibration of Vector Magnetometers

    DEFF Research Database (Denmark)

    Merayo, José M.G.; Brauer, Peter; Primdahl, Fritz

    2000-01-01

    The calibration parameters of a vector magnetometer are estimated only by the use of a scalar reference magnetometer. The method presented in this paper differs from those previously reported in its linearized parametrization. This allows the determination of three offsets or signals in the absence...

  11. CMOS circuits manual

    CERN Document Server

    Marston, R M

    1995-01-01

    CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

  12. High Accuracy Vector Helium Magnetometer

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed HAVHM instrument is a laser-pumped helium magnetometer with both triaxial vector and omnidirectional scalar measurement capabilities in a single...

  13. Optical Magnetometer Incorporating Photonic Crystals

    Science.gov (United States)

    Kulikov, Igor; Florescu, Lucia

    2007-01-01

    According to a proposal, photonic crystals would be used to greatly increase the sensitivities of optical magnetometers that are already regarded as ultrasensitive. The proposal applies, more specifically, to a state-of-the-art type of quantum coherent magnetometer that exploits the electromagnetically-induced-transparency (EIT) method for determining a small change in a magnetic field indirectly via measurement of the shift, induced by that change, in the hyperfine levels of resonant atoms exposed to the field.

  14. Magnetogama: an open schematic magnetometer

    Science.gov (United States)

    Wahyudi; Khakhim, Nurul; Kuntoro, Tri; Mardiatno, Djati; Rakhman, Afif; Setyo Handaru, Anas; Akhmad Mufaqih, Adien; Marwan Irnaka, Theodosius

    2017-09-01

    Magnetogama is an open schematic hand-assembled fluxgate magnetometer. Compared to another magnetometer, Magnetogama has more benefit concerning its price and its ease of use. Practically Magnetogama can be utilized either in land or attached to an unmanned aerial vehicle (UAV). Magnetogama was designed to give open access to a cheap and accurate alternative to magnetometer sensor. Therefore it can be used as a standard design which is directly applicable to the low-budget company or education purposes. Schematic, code and several verification tests were presented in this article ensuring its reproducibility. Magnetogama has been tested with two kind of tests: a comparison with two nearest observatories at Learmonth (LRM) and Kakadu (KDU) and the response of magnetic substance.

  15. Magnetogama: an open schematic magnetometer

    Directory of Open Access Journals (Sweden)

    Wahyudi

    2017-09-01

    Full Text Available Magnetogama is an open schematic hand-assembled fluxgate magnetometer. Compared to another magnetometer, Magnetogama has more benefit concerning its price and its ease of use. Practically Magnetogama can be utilized either in land or attached to an unmanned aerial vehicle (UAV. Magnetogama was designed to give open access to a cheap and accurate alternative to magnetometer sensor. Therefore it can be used as a standard design which is directly applicable to the low-budget company or education purposes. Schematic, code and several verification tests were presented in this article ensuring its reproducibility. Magnetogama has been tested with two kind of tests: a comparison with two nearest observatories at Learmonth (LRM and Kakadu (KDU and the response of magnetic substance.

  16. Digital fluxgate magnetometer: design notes

    International Nuclear Information System (INIS)

    Belyayev, Serhiy; Ivchenko, Nickolay

    2015-01-01

    We presented an approach to understanding the performance of a fully digital fluxgate magnetometer. All elements of the design are important for the performance of the instrument, and the presence of the digital feed-back loop introduces certain peculiarities affecting the noise and dynamic performance of the instrument. Ultimately, the quantisation noise of the digital to analogue converter is found to dominate the noise of the current design, although noise shaping alleviates its effect to some extent. An example of magnetometer measurements on board a sounding rocket is presented, and ways to further improve the performance of the instrument are discussed. (paper)

  17. Digital fluxgate magnetometer: design notes

    Science.gov (United States)

    Belyayev, Serhiy; Ivchenko, Nickolay

    2015-12-01

    We presented an approach to understanding the performance of a fully digital fluxgate magnetometer. All elements of the design are important for the performance of the instrument, and the presence of the digital feed-back loop introduces certain peculiarities affecting the noise and dynamic performance of the instrument. Ultimately, the quantisation noise of the digital to analogue converter is found to dominate the noise of the current design, although noise shaping alleviates its effect to some extent. An example of magnetometer measurements on board a sounding rocket is presented, and ways to further improve the performance of the instrument are discussed.

  18. A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

    Science.gov (United States)

    Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

    1993-01-01

    A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

  19. Incentive Compatibility

    OpenAIRE

    Ledyard, John O.

    1987-01-01

    Incentive compatibility is described and discussed. A summary of the current state of understanding is provided. Key words are: incentive compatibility, game theory, implementation, mechanism, Bayes, Nash, and revelation.

  20. Low Cost, Low Power, High Sensitivity Magnetometer

    Science.gov (United States)

    2008-12-01

    which are used to measure the small magnetic signals from brain. Other types of vector magnetometers are fluxgate , coil based, and magnetoresistance...concentrator with the magnetometer currently used in Army multimodal sensor systems, the Brown fluxgate . One sees the MEMS fluxgate magnetometer is...Guedes, A.; et al., 2008: Hybrid - LOW COST, LOW POWER, HIGH SENSITIVITY MAGNETOMETER A.S. Edelstein*, James E. Burnette, Greg A. Fischer, M.G

  1. An Arduino-Based Magnetometer

    Science.gov (United States)

    McCaughey, Mike

    2017-01-01

    An Arduino-based system with a triple axis magnetometer chip may be used to plot both the strength and direction of the magnetic field of a magnet directly on a sheet of paper. Before taking measurements, it is necessary either to correct for or to eliminate soft and hard iron effects. The same sensor may be used to determine the presence of soft…

  2. Magnetometer calibration and test procedure

    International Nuclear Information System (INIS)

    Squier, D.M.

    1997-01-01

    Nuclear waste has been sluiced and pumped from storage tank 241-AX-104, leaving a contaminated heel volume. These operations did not include measurements of the removed waste volume leaving an unknown heel volume in the tank. A magnetometer transducer will be lowered through tank riser ports to rest on the heel's surface. The heel thickness will control the distance between the transducer and the tank's bottom The instrument's output varies with the distance from a magnetic mass, such as the tank's steel bottom, thereby enabling a measurement of the heel depth. Measurements at several tank locations will permit an estimate of the tank's heel volume. The magnetometer's output is influenced by adjacent magnetic materials, such as the tank walls, air lift circulators or other equipment installed in the tank. An adjacent vertical steel surface produces a voltage offset in the instrument's output. Measurements near a tank wall or other tank components may be corrected by noting the offset before the instrument's output is influenced by the tank bottom. An unlevel or uneven heel surface could orient the magnetometer transducer so that it is not vertically level. The magnetometer readings are influenced by these skewed transducer orientations. The magnitude of these errors and offsets must be characterized to bound the heel volume estimate range. The data collected by this activity will be statistically analyzed by SESC to state the confidence level of the heel volume estimates. A test report will document the results of the measurements

  3. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-11-23

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

  4. Ultra-low Voltage CMOS Cascode Amplifier

    OpenAIRE

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique.

  5. Ultra-low Voltage CMOS Cascode Amplifier

    DEFF Research Database (Denmark)

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique......, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique....

  6. Induction Magnetometers – Design Peculiarities

    Directory of Open Access Journals (Sweden)

    Valeriy KOREPANOV

    2010-09-01

    Full Text Available Induction or search-coil magnetometers (IM are widely used in many branches of science and industry. The frequency range and dynamic range of IMs are probably the widest of all existing magnetometers: they are used for the measurement of magnetic field variations in the frequency band from ~10-4 till ~106 Hz with the intensities from fractions of femtotesla till tens of tesla. This explains the permanent interest to IM design and the attempts to construct the IMs with best possible parameters. The present paper deals with the peculiarities of IM design. An attempt to re-establish the correctness of priorities in the field is made and the approaches to the IM optimization and their quality estimation are described.

  7. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    International Nuclear Information System (INIS)

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  8. Atomic magnetometer for human magnetoencephalograpy.

    Energy Technology Data Exchange (ETDEWEB)

    Schwindt, Peter; Johnson, Cort N.

    2010-12-01

    We have developed a high sensitivity (<5 fTesla/{radical}Hz), fiber-optically coupled magnetometer to detect magnetic fields produced by the human brain. This is the first demonstration of a noncryogenic sensor that could replace cryogenic superconducting quantum interference device (SQUID) magnetometers in magnetoencephalography (MEG) and is an important advance in realizing cost-effective MEG. Within the sensor, a rubidium vapor is optically pumped with 795 laser light while field-induced optical rotations are measured with 780 nm laser light. Both beams share a single optical axis to maximize simplicity and compactness. In collaboration with neuroscientists at The Mind Research Network in Albuquerque, NM, the evoked responses resulting from median nerve and auditory stimulation were recorded with the atomic magnetometer and a commercial SQUID-based MEG system with signals comparing favorably. Multi-sensor operation has been demonstrated with two AMs placed on opposite sides of the head. Straightforward miniaturization would enable high-density sensor arrays for whole-head magnetoencephalography.

  9. Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

    KAUST Repository

    Ghoneim, Mohamed T.; Alfaraj, Nasir; Torres-Sevilla, Galo A.; Fahad, Hossain M.; Hussain, Muhammad Mustafa

    2016-01-01

    . The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied

  10. Vector Fluxgate Magnetometer (VMAG) Development for DSX

    Science.gov (United States)

    2010-06-03

    AFRL-RV-HA-TR-2010-1056 Vector Fluxgate Magnetometer (VMAG) Development for DSX Mark B. Moldwin UCLA Institute of Geophysics... Fluxgate Magnetometer (VMAG) Development for DSX 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62601F 6. AUTHOR(S) Mark B. Moldwin 5d. PROJECT...axis fluxgate magnetometer for the AFRL-mission. The instrument is designed to measure the medium-Earth orbit geomagnetic field with precision of 0.1

  11. DSCOVR Magnetometer Level 2 One Minute Averages

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Interplanetary magnetic field observations collected from magnetometer on DSCOVR satellite - 1-minute average of Level 1 data

  12. DSCOVR Magnetometer Level 2 One Second Averages

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Interplanetary magnetic field observations collected from magnetometer on DSCOVR satellite - 1-second average of Level 1 data

  13. Beyond CMOS nanodevices 2

    CERN Document Server

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

  14. Beyond CMOS nanodevices 1

    CERN Document Server

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

  15. Digitalization of highly precise fluxgate magnetometers

    DEFF Research Database (Denmark)

    Cerman, Ales; Kuna, A.; Ripka, P.

    2005-01-01

    This paper describes the theory behind all three known ways of digitalizing the fluxgate magnetometers: analogue magnetometers with digitalized output using high resolution ADC, application of the delta-sigma modulation to the sensor feedback loop and fully digital signal detection. At present time...... the Delta-Sigma ADCs are mostly used for the digitalization of the highly precise fluxgate magnetorneters. The relevant part of the paper demonstrates some pitfalls of their application studied during the design of the magnetometer for the new Czech scientific satellite MIMOSA. The part discussing...... the application of the A-E modulation to the sensor feedback loop theoretically derives the main advantage of this method-increasing of the modulation order and shows its real potential compared to the analog magnetometer with consequential digitalization. The comparison is realized on the modular magnetometer...

  16. CMOS MEMS capacitive absolute pressure sensor

    International Nuclear Information System (INIS)

    Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

    2013-01-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

  17. Epoxy Chip-in-Carrier Integration and Screen-Printed Metalization for Multichannel Microfluidic Lab-on-CMOS Microsystems.

    Science.gov (United States)

    Li, Lin; Yin, Heyu; Mason, Andrew J

    2018-04-01

    The integration of biosensors, microfluidics, and CMOS instrumentation provides a compact lab-on-CMOS microsystem well suited for high throughput measurement. This paper describes a new epoxy chip-in-carrier integration process and two planar metalization techniques for lab-on-CMOS that enable on-CMOS electrochemical measurement with multichannel microfluidics. Several design approaches with different fabrication steps and materials were experimentally analyzed to identify an ideal process that can achieve desired capability with high yield and low material and tool cost. On-chip electrochemical measurements of the integrated assembly were performed to verify the functionality of the chip-in-carrier packaging and its capability for microfluidic integration. The newly developed CMOS-compatible epoxy chip-in-carrier process paves the way for full implementation of many lab-on-CMOS applications with CMOS ICs as core electronic instruments.

  18. A simple fluxgate magnetometer using amorphous alloys

    International Nuclear Information System (INIS)

    Ghatak, S.K.; Mitra, A.

    1992-01-01

    A simple fluxgate magnetometer is developed using low magnetostrictive ferromagnetic amorphous alloy acting as a sensing element. It uses the fact that the magnetization of sensing element symmetrically magnetized by a sinusoidal field contains even harmonic components in presence of dc signal field H and the amplitude of the second harmonic component of magnetization is proportional to H. The sensitivity and linearity of the magnetometer with signal field are studied for parallel configuration and the field ranging from 10 nT to 10 μT can be measured. The functioning of the magnetometer is demonstrated by studying the shielding and flux-trapping phenomena in high-Tc superconductor. (orig.)

  19. Poly-SiGe for MEMS-above-CMOS sensors

    CERN Document Server

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  20. A CMOS 128-APS linear array integrated with a LVOF for highsensitivity and high-resolution micro-spectrophotometry

    NARCIS (Netherlands)

    Liu, C.; Emadi, A.; Wu, H.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    A linear array of 128 Active Pixel Sensors has been developed in standard CMOS technology and a Linear Variable Optical Filter (LVOF) is added using CMOS-compatible post-process, resulting in a single chip highly-integrated highresolution microspectrometer. The optical requirements imposed by the

  1. Radiation-hardened CMOS integrated circuits

    International Nuclear Information System (INIS)

    Pikor, A.; Reiss, E.M.

    1980-01-01

    Substantial effort has been directed at radiation-hardening CMOS integrated circuits using various oxide processes. While most of these integrated circuits have been successful in demonstrating megarad hardness, further investigations have shown that the 'wet-oxide process' is most compatible with the RCA CD4000 Series process. This article describes advances in the wet-oxide process that have resulted in multimegarad hardness and yield to MIL-M-38510 screening requirements. The implementation of these advances into volume manufacturing is geared towards supplying devices for aerospace requirements such as the Defense Meterological Satellite program (DMSP) and the Global Positioning Satellite (GPS). (author)

  2. Application of CMOS Technology to Silicon Photomultiplier Sensors

    Science.gov (United States)

    D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

    2017-01-01

    We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

  3. All optical vector magnetometer, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I research project will investigate a novel method of operating an atomic magnetometer to simultaneously measure total magnetic fields and vector magnetic...

  4. The Fluxgate Magnetometer Simulation in Comsol Multiphysics

    Directory of Open Access Journals (Sweden)

    Kolomeytsev Andrey

    2018-01-01

    Full Text Available This article describes the fluxgate magnetometer simulation in Comsol Multiphysics software package. The simulation results coincide with the experiment described earlier. Decomposition of the output signal by the Fourier coefficients shows a frequency doubling.

  5. The Pioneer XI high field fluxgate magnetometer

    Science.gov (United States)

    Acuna, M. A.; Ness, N. F.

    1975-01-01

    The high field fluxgate magnetometer experiment flown aboard the Pioneer XI spacecraft is described. This extremely simple instrument was used to extend the spacecraft's upper-limit measurement capability by approximately an order of magnitude (from 0.14 mT to 1.00 mT) with minimum power and volume requirements. This magnetometer was designed to complement the low-field measurements provided by a helium vector magnetometer and utilizes magnetic ring core sensors with biaxial orthogonal sense coils. The instrument is a single-range, triaxial-fluxgate magnetometer capable of measuring fields of up to 1 mT along each orthogonal axis, with a maximum resolution of 1 microT.

  6. The Fluxgate Magnetometer Simulation in Comsol Multiphysics

    OpenAIRE

    Kolomeytsev Andrey; Baranov Pavel; Zatonov Ivan

    2018-01-01

    This article describes the fluxgate magnetometer simulation in Comsol Multiphysics software package. The simulation results coincide with the experiment described earlier. Decomposition of the output signal by the Fourier coefficients shows a frequency doubling.

  7. Magnetometer Data recovered from 35mm film

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The L57 CDMP recovery project takes magnetometer data on 35mm film stored at the archive's climate controlled warehouse and digitizes them.

  8. Development of a nuclear precession magnetometer

    International Nuclear Information System (INIS)

    Virgens Alves, J.G. das.

    1983-12-01

    The objective of this thesis was to develop a proton precession magnetometer for geophysical prospecting and base stations. The proton procession magnetometer measures the total magnetic fields intensity. It operates on the basis of nuclear magnetic resonance by determining the processing frequency of protons of a non viscous liquid in the terrestrial magnetic fields. The instrument was tested in field to evaluate signal/noise ratio, supportable gradient and battery consumption. Application test was carried out to take diurnal variation data and, reconnaissance and detail surveys data on an archaeological site in the Marajo Island-Pa. The test results were confronted with two commercial magnetometers-GP-70, McPhar e G-816, Geometric - and, with data from Observatorio Magnetico Ilha de Tatuoca as well. For all cases, the data comparison showed a good performance of the magnetometer tested. (author)

  9. Wideband CMOS receivers

    CERN Document Server

    Oliveira, Luis

    2015-01-01

    This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

  10. ATS-6 - UCLA fluxgate magnetometer

    Science.gov (United States)

    Mcpherron, R. L.; Coleman, P. J., Jr.; Snare, R. C.

    1975-01-01

    A summary of the design of the University of California at Los Angeles' fluxgate magnetometer is presented. Instrument noise in the bandwidth 0.001 to 1.0 Hz is of order 85 m gamma. The DC field of the spacecraft transverse to the earth-pointing axis is 1.0 + or - 21 gamma in the X direction and -2.4 + or - 1.3 gamma in the Y direction. The spacecraft field parallel to this axis is less than 5 gamma. The small spacecraft field has made possible studies of the macroscopic field not previously possible at synchronous orbit. At the 96 W longitude of Applications Technology Satellite-6 (ATS-6), the earth's field is typically inclined 30 deg to the dipole axis at local noon. Most perturbations of the field are due to substorms. These consist of a rotation in the meridian to a more radial field followed by a subsequent rotation back. The rotation back is normally accompanied by transient variations in the azimuthal field. The exact timing of these perturbations is a function of satellite location and the details of substorm development.

  11. Observatory Magnetometer In-Situ Calibration

    Directory of Open Access Journals (Sweden)

    A Marusenkov

    2011-07-01

    Full Text Available An experimental validation of the in-situ calibration procedure, which allows estimating parameters of observatory magnetometers (scale factors, sensor misalignment without its operation interruption, is presented. In order to control the validity of the procedure, the records provided by two magnetometers calibrated independently in a coil system have been processed. The in-situ estimations of the parameters are in very good agreement with the values provided by the coil system calibration.

  12. CMOS/SOS processing

    Science.gov (United States)

    Ramondetta, P.

    1980-01-01

    Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

  13. Electromagnetic Investigation of a CMOS MEMS Inductive Microphone

    Directory of Open Access Journals (Sweden)

    Farès TOUNSI

    2009-09-01

    Full Text Available This paper presents a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone. We have shown, that the use of an alternative current (AC in the primary fixed inductor results in a substantially higher induced voltage in the secondary inductor comparing to the case when a direct current (DC is used. The expected increase of the induced voltage can be expressed by a voltage ratio of AC and DC solutions that is in the range of 3 to 6. A prototype fabrication of this microphone has been realized using a combination of standard CMOS 0.6 µm process with a CMOS-compatible post-process consisting in a bulk micromachining technology. The output voltage of the electrodynamic microphone that achieves the µV range can be increased by the use of the symmetric dual-layer spiral inductor structure.

  14. Electronic devices fabricated at CMOS backend-compatible temperatures

    NARCIS (Netherlands)

    Brunets, I.

    2009-01-01

    The number of transistors in integrated circuits is exponentially increasing over time, as predicted by Gordon Moore in the 1960s (e.g. 781 million transistors in the current Intel Xeon processor). This leads to higher computing power at a reduced cost per function. However, the future scaling

  15. Directly coupled YBCO dc SQUID magnetometers

    International Nuclear Information System (INIS)

    Petersen, P.R.E.; Shen, Y.Q.; Holst, T.; Larsen, B.H.; Sager, M.P.; Bindslev Hansen, J.

    1999-01-01

    YBa 2 Cu 3 O 7- x magnetometers have been made on 10mmx10mm MgO substrates by directly coupling the magnetometer pick-up loop to a dc SQUID with narrow strip lines. The dc SQUIDs were made with YBa 2 Cu 3 O 7-x step-edge Josephson junctions. The layout of the magnetometer pick-up loop was chosen as a compromise between maximizing the loop effective area and minimizing the loop inductance. The SQUID was designed to have L S ∼100 pH in order to obtain β L =2I 0 L S /Φ 0 approx.= 1 with the single-junction critical current I 0 ∼10 μA. We have made magnetometers with white noise levels down to 55 fT Hz -1/2 and a 1/f knee at 1 Hz (ac biased). Noise measurements were made on a field-cooled magnetometer. The noise measured at 1 Hz when cooled in 'zero field' was 175 fT Hz -1/2 . When cooled in magnetic fields of B = 50 μT and B = 100 μT we measured the noise at 1 Hz to be 430 fT Hz -1 2 and 1.3 pT Hz -1/2 , respectively. (author)

  16. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  17. CMOS analog circuit design

    CERN Document Server

    Allen, Phillip E

    1987-01-01

    This text presents the principles and techniques for designing analog circuits to be implemented in a CMOS technology. The level is appropriate for seniors and graduate students familiar with basic electronics, including biasing, modeling, circuit analysis, and some familiarity with frequency response. Students learn the methodology of analog integrated circuit design through a hierarchically-oriented approach to the subject that provides thorough background and practical guidance for designing CMOS analog circuits, including modeling, simulation, and testing. The authors' vast industrial experience and knowledge is reflected in the circuits, techniques, and principles presented. They even identify the many common pitfalls that lie in the path of the beginning designer--expert advice from veteran designers. The text mixes the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, providing the perfect balance.

  18. Silent Localization of Underwater Sensors Using Magnetometers

    Directory of Open Access Journals (Sweden)

    Jonas Callmer

    2010-01-01

    Full Text Available Sensor localization is a central problem for sensor networks. If the sensor positions are uncertain, the target tracking ability of the sensor network is reduced. Sensor localization in underwater environments is traditionally addressed using acoustic range measurements involving known anchor or surface nodes. We explore the usage of triaxial magnetometers and a friendly vessel with known magnetic dipole to silently localize the sensors. The ferromagnetic field created by the dipole is measured by the magnetometers and is used to localize the sensors. The trajectory of the vessel and the sensor positions are estimated simultaneously using an Extended Kalman Filter (EKF. Simulations show that the sensors can be accurately positioned using magnetometers.

  19. Micromachined high-performance RF passives in CMOS substrate

    International Nuclear Information System (INIS)

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-01-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

  20. A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

    Science.gov (United States)

    Wallace, Robert M.

    2001-03-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  1. Man-Portable Simultaneous Magnetometer and EM System (MSEMS)

    Science.gov (United States)

    2008-12-01

    limited to cesium vapor magnetometers outputting a Larmor signal. It cannot, as presently configured, be used with less expensive fluxgate magnetometers ...pulses to convert the frequency-based Larmor signal into nT. A fluxgate magnetometer does not employ the resonance mechanism of an alkali vapor...Simultaneous Magnetometer and EM System (MSEMS) December 2008 Report Documentation Page Form ApprovedOMB No. 0704-0188 Public reporting burden for the

  2. Determination of the Overhauser magnetometer uncertainty

    Czech Academy of Sciences Publication Activity Database

    Ulvr, M.; Zikmund, A.; Kupec, J.; Janošek, M.; Vlk, Michal; Bayer, Tomáš

    2015-01-01

    Roč. 66, 7/s (2015), s. 26-29 ISSN 1335-3632 Institutional support: RVO:67985530 Keywords : Overhauser magnetometer * Earth `s magnetic field * comparison * uncertainty Subject RIV: DE - Earth Magnetism, Geodesy, Geography Impact factor: 0.407, year: 2015

  3. A photovoltaic-driven and energy-autonomous CMOS implantable sensor.

    Science.gov (United States)

    Ayazian, Sahar; Akhavan, Vahid A; Soenen, Eric; Hassibi, Arjang

    2012-08-01

    An energy-autonomous, photovoltaic (PV)-driven and MRI-compatible CMOS implantable sensor is presented. On-chip P+/N-well diode arrays are used as CMOS-compatible PV cells to harvest μW's of power from the light that penetrates into the tissue. In this 2.5 mm × 2.5 mm sub-μW integrated system, the in-vivo physiological signals are first measured by using a subthreshold ring oscillator-based sensor, the acquired data is then modulated into a frequency-shift keying (FSK) signal, and finally transmitted neuromorphically to the skin surface by using a pair of polarized electrodes.

  4. A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector

    NARCIS (Netherlands)

    Lee, M.J.; Youn, J.S.; Park, K.Y.; Choi, W.Y.

    2014-01-01

    We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche

  5. A novel multi-actuation CMOS RF MEMS switch

    Science.gov (United States)

    Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

    2008-12-01

    This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

  6. Structured Analog CMOS Design

    CERN Document Server

    Stefanovic, Danica

    2008-01-01

    Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The proposed transistor-level design procedure is based on the EKV modeling approach and relies on the device inversion level as a fundament

  7. Planar pixel sensors in commercial CMOS technologies

    Energy Technology Data Exchange (ETDEWEB)

    Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn, Nussallee 12, 53115 Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany)

    2015-07-01

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  8. Vector Magnetometer Application with Moving Carriers

    Directory of Open Access Journals (Sweden)

    Andrii Prystai

    2016-12-01

    Full Text Available In magnetic prospecting the aeromagnetic survey is a widespread method used for research in large territories or in the areas with difficult access (forests, swamps, shallow waters. At present, a new type of mobile carriers – remotely piloted vehicles or drones – is becoming very common. The drones supplied by magnetometer can be also used for underground utility location (for example, steel and concrete constructions, buried power cables, to name a few. For aeromagnetic survey, obtaining of 3-component magnetic field data gives higher processing precision, so the fluxgate magnetometers (FGM seem to be the most preferable by reason of low weight, noise, power consumption and costs. During movement of FGM fixed to a drone practically permanent attitude changes in the Earth’s magnetic field arises with corresponding changes of its projection at FGM axes. Also the electromagnetic interference from the drone motor and uncontrolled oscillations of drone and suspension are the factors which limit the magnetometer sensitivity level. Aroused because of this, signals significantly exceed the expected signals from a studied object and so should be removed by proper interference filtration and use of stabilized towed construction, as well as at data processing. To find the necessary resolution threshold of a drone-portable FGM, the modeling was made to estimate magnetic field value from a small sphere about 1 cm radius at the minimal altitude of drone flight and it was shown that such a small object can be reliably detected if the FGM noise level is less than 0.15 nT. Next requirement is the necessity to decrease as much as possible the FGM power consumption with retention of low noise level. Finally, because of drone movement, the broadening of a frequency range should be done. The LEMI-026 magnetometer was developed satisfying all requirements to the drone-mounted device. The field tests were successfully performed using two of LEMI-026

  9. A Web Server for MACCS Magnetometer Data

    Science.gov (United States)

    Engebretson, Mark J.

    1998-01-01

    NASA Grant NAG5-3719 was provided to Augsburg College to support the development of a web server for the Magnetometer Array for Cusp and Cleft Studies (MACCS), a two-dimensional array of fluxgate magnetometers located at cusp latitudes in Arctic Canada. MACCS was developed as part of the National Science Foundation's GEM (Geospace Environment Modeling) Program, which was designed in part to complement NASA's Global Geospace Science programs during the decade of the 1990s. This report describes the successful use of these grant funds to support a working web page that provides both daily plots and file access to any user accessing the worldwide web. The MACCS home page can be accessed at http://space.augsburg.edu/space/MaccsHome.html.

  10. Midlatitude magnetometer chains during the IMS

    International Nuclear Information System (INIS)

    Mcpherron, R.L.

    1982-01-01

    The International Magnetospheric Study (IMS) is an international program to study global problems of magnetospheric dynamics. A key element of the U.S. participation in this program was the establishment of a ground magnetometer network. This network included a number of arrays at high and low latitudes. This report describes three chains established at midlatitudes, including the IMS Midlatitude Chain, the AFGL Magnetometer Network, and the Bell Lab Conjugate Array. Descriptions of the type of equipment, station locations, types of data display, and availability of data for each chain are presented in this report. A major problem of the data analysis phase of the IMS will be reducing selected subsets of these data to a common format. Currently, there are no plans to do this in a systematic manner

  11. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    International Nuclear Information System (INIS)

    Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.

    2016-01-01

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  12. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    Science.gov (United States)

    Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

    2016-09-01

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  13. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Affolder, A.; Buckland, M.; Meng, L. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I. [Department of Physics, Oxford University, Oxford (United Kingdom); and others

    2016-09-21

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  14. Digital Detection and feedback Fluxgate Magnetometer

    DEFF Research Database (Denmark)

    Piil-Henriksen, J.; Merayo, José M.G.; Nielsen, Otto V

    1996-01-01

    A new full Earth's field dynamic feedback fluxgate magnetometer is described. It is based entirely on digital signal processing and digital feedback control, thereby replacing the classical second harmonic tuned analogue electronics by processor algorithms. Discrete mathematical cross......-correlation routines and substantial oversampling reduce the noise to 71 pT root-mean-square in a 0.25-10 Hz bandwidth for a full Earth's field range instrument....

  15. High temperature superconductive flux gate magnetometer

    International Nuclear Information System (INIS)

    Gershenson, M.

    1991-01-01

    This paper proposes a different type of HTS superconducting magnetometer based on the non-linear magnetic behavior of bulk HTS materials. The device design is based on the generation of second harmonics which arise as a result of non-linear magnetization observed in Type-II superconductors. Even harmonics are generated from the non-linear interaction of an ac excitation signal with an external DC magnetic field which acts as a bias signal

  16. Mathematical model of a fluxgate magnetometer

    OpenAIRE

    Baranov Pavel F.; Baranova Vitalia E.; Nesterenko Tamara G.

    2018-01-01

    In paper analytical equations for calculate the electromotive force in the measuring coil of the fluxgate magnetometer independent of the drive signal frequency content are presented. Also, the equations for es-timation of the fluxgate sensitivity at any harmonic and for study fluxgates operation with a glance to the waveform and the polynomial approximation of the mean magnetization curve of the core are provided.

  17. Mathematical model of a fluxgate magnetometer

    Directory of Open Access Journals (Sweden)

    Baranov Pavel F.

    2018-01-01

    Full Text Available In paper analytical equations for calculate the electromotive force in the measuring coil of the fluxgate magnetometer independent of the drive signal frequency content are presented. Also, the equations for es-timation of the fluxgate sensitivity at any harmonic and for study fluxgates operation with a glance to the waveform and the polynomial approximation of the mean magnetization curve of the core are provided.

  18. Fluxgate magnetometers for outer planets exploration

    Science.gov (United States)

    Acuna, M. H.

    1974-01-01

    The exploration of the interplanetary medium and the magnetospheres of the outer planets requires the implementation of magnetic field measuring instrumentation with wide dynamic range, high stability, and reliability. The fluxgate magnetometers developed for the Pioneer 11 and Mariner-Jupiter-Saturn missions are presented. These instruments cover the range of .01 nT to 2 million nT with optimum performance characteristics and low power consumption.

  19. A CMOS Morlet Wavelet Generator

    Directory of Open Access Journals (Sweden)

    A. I. Bautista-Castillo

    2017-04-01

    Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

  20. A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.

    Science.gov (United States)

    Lee, Myung-Jae; Youn, Jin-Sung; Park, Kang-Yeob; Choi, Woo-Young

    2014-02-10

    We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

  1. The MAGSAT vector magnetometer: A precision fluxgate magnetometer for the measurement of the geomagnetic field

    Science.gov (United States)

    Acuna, M. H.; Scearce, C. S.; Seek, J.; Scheifele, J.

    1978-01-01

    A description of the precision triaxial fluxgate magnetometer to be flown aboard the MAGSAT spacecraft is presented. The instrument covers the range of + or - 64,000 nT with a resolution of + or - 0.5 nT, an intrinsic accuracy of + or - 0.001% of full scale and an angular alignment stability of the order of 2 seconds of arc. It was developed at NASA's Goddard Space Flight Center and represents the state-of-the-art in precision vector magnetometers developed for spaceflight use.

  2. A back-illuminated megapixel CMOS image sensor

    Science.gov (United States)

    Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

    2005-01-01

    In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

  3. Development of a Micro-Fabricated Total-Field Magnetometer

    Science.gov (United States)

    2011-03-01

    are made with fluxgate technologies. Fluxgates have lower sensitivity than Cs magnetometers , yet they continue to be used in small wands simply...extraction process by providing the sensitivity of a Cs magnetometer with the convenience and low cost of a fluxgate wand. Extremely small and low cost...FINAL REPORT Development of a Micro-Fabricated Total-Field Magnetometer SERDP Project MR-1512 MARCH 2011 Mark Prouty Geometrics, Inc

  4. Choice of optimal parameters for the superconductive quantum magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Vasiliev, B V; Ivanenko, A I; Trofimov, V N

    1974-12-31

    The problem of choosing the optimal coupling coefficient and optimal working frequency for superconductive quantum magnetometer is considered. The present experimental signalnoise dependence confirms the drawn conclusions. (auth)

  5. High Tc Josephson Junctions, SQUIDs and magnetometers

    International Nuclear Information System (INIS)

    Clarke, J.

    1991-01-01

    There has recently been considerable progress in the state-of-the-art of high-T c magnetometers based on dc SQUIDs (Superconducting Quantum Interference Devices). This progress is due partly to the development of more manufacturable Josephson junctions, making SQUIDs easier to fabricate, and partly to the development of multiturn flux transformers that convert the high sensitivity of SQUIDs to magnetic flux to a correspondingly high sensitivity to magnetic field. Needless to say, today's high-T c SQUIDs are still considerably less sensitive than their low-T c counterparts, particularly at low frequencies (f) where their level of 1/f noise remains high. Nonetheless, the performance of the high-T c devices has now reached the point where they are adequate for a number of the less demanding applications; furthermore, as we shall see, at least modest improvements in performance are expected in the near future. In this article, the author outlines these various developments. This is far from a comprehensive review of the field, however, and, apart from Sec. 2, he describes largely his own work. He begins in Sec. 2 with an overview of the various types of Josephson junctions that have been investigated, and in Sec. 3, he describes some of the SQUIDs that have been tested, and assess their performance. Section 4 discuss the development of the multilayer structures essential for an interconnect technology, and, in particular, for crossovers and vias. Section 5 shows how this technology enables one to fabricate multiturn flux transformers which, in turn, can be coupled to SQUIDs to make magnetometers. The performance and possible future improvements in these magnetometers are assessed, and some applications mentioned

  6. Corrosion measurement using flux gate magnetometer

    International Nuclear Information System (INIS)

    Rashdi Shah Ahmad; Chong Cheong Wei

    2001-01-01

    The ability of fluxgate magnetometer to detect and measure quantitatively the magnetic field generated by electrochemical corrosion is presented. In this study, each sample (iron plate) was exposed to a range of increasingly corrosive environment. During the exposure, we measured the magnetic field above the sample for specific duration of time. The result shows that there is a clear relationship between corrosivity of the environment and the change in magnitude of magnetic field that was generated by the corrosion reaction. Therefore, the measurement of magnetic field might be used to determine the corrosion rates. (Author)

  7. Automated system for the calibration of magnetometers

    DEFF Research Database (Denmark)

    Petrucha, Vojtech; Kaspar, Petr; Ripka, Pavel

    2009-01-01

    A completely nonmagnetic calibration platform has been developed and constructed at DTU Space (Technical University of Denmark). It is intended for on-site scalar calibration of high-precise fluxgate magnetometers. An enhanced version of the same platform is being built at the Czech Technical Uni...... through custom-made optical incremental sensors. The system is controlled by a microcontroller, which executes commands from a computer. The properties of the system as well as calibration and measurement results will be presented. ©2009 American Institute of Physics...

  8. Performances and place of magnetometers based on amorphous wires compared to conventional magnetometers

    International Nuclear Information System (INIS)

    Robbes, D.; Dolabdjian, C.; Monfort, Y.

    2002-01-01

    We discuss and compare performances of various room temperature magnetometers. The work is directed towards the search of those magnetometers having a high sensitivity (>1000 V/T), a very low noise level (>1 pT/√Hz at white noise) attainable in a volume typically smaller than 1 cm 3 . The choice of this set of parameters is related to the useful comparison of room temperature magnetometers versus cryogenic ones, such as Superconducting Quantum Interferometer Devices (SQUIDs). The latter have highly degraded performances when their working operations needs an open unshielded environment as required for example in industrial application (non-destructive evaluation). SQUIDs have also a rather poor spatial resolution, and could be replaced by room temperature sensors in some magnetic imaging systems, which require a high spatial resolution. The paper is 'highlighted' in the field of magnetic sensors based on amorphous magnetic wires that were used to carry out wide bandwidth (>100 kHz), very low noise flux gate (∼pT/√Hz at white noise) and highly sensitive, low noise magnetometers (∼pT/√Hz at white noise) Colpitts oscillator configuration use by K. Bushida's

  9. Large area CMOS image sensors

    International Nuclear Information System (INIS)

    Turchetta, R; Guerrini, N; Sedgwick, I

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  10. Digital Fluxgate Magnetometer for Detection of Microvibration

    Directory of Open Access Journals (Sweden)

    Menghui Zhi

    2017-01-01

    Full Text Available In engineering practice, instruments, such as accelerometer and laser interferometer, are widely used in vibration measurement of structural parts. A method for using a triaxial fluxgate magnetometer as a microvibration sensor to measure low-frequency pendulum microvibration (not translational vibration is proposed in this paper, so as to detect vibration from low-frequency vibration sources, such as large rotating machine, large engineering structure, earthquake, and microtremor. This method provides vibration detection based on the environmental magnetic field signal to avoid increased measurement difficulty and error due to different relative positions of permanent magnet and magnetometer on the device under test (DUT when using the original magnetic measurement method. After fixedly connecting the fluxgate probe with the DUT during the test, the angular displacement due to vibration can be deduced by measuring the geomagnetic field’s magnetic induction intensity change on the orthogonal three components during the vibration. The test shows that the microvibration sensor has angular resolution of over 0.05° and maximum measuring frequency of 64 Hz. As an exploring test aimed to detect the microvibration of earth-orbiting satellite in the in-orbit process, the simulation experiment successfully provides the real-time microvibration information for attitude and orbit control subsystem.

  11. Automated system for the calibration of magnetometers

    International Nuclear Information System (INIS)

    Petrucha, Vojtech; Kaspar, Petr; Ripka, Pavel; Merayo, Jose M. G.

    2009-01-01

    A completely nonmagnetic calibration platform has been developed and constructed at DTU Space (Technical University of Denmark). It is intended for on-site scalar calibration of high-precise fluxgate magnetometers. An enhanced version of the same platform is being built at the Czech Technical University. There are three axes of rotation in this design (compared to two axes in the previous version). The addition of the third axis allows us to calibrate more complex devices. An electronic compass based on a vector fluxgate magnetometer and micro electro mechanical systems (MEMS) accelerometer is one example. The new platform can also be used to evaluate the parameters of the compass in all possible variations in azimuth, pitch, and roll. The system is based on piezoelectric motors, which are placed on a platform made of aluminum, brass, plastic, and glass. Position sensing is accomplished through custom-made optical incremental sensors. The system is controlled by a microcontroller, which executes commands from a computer. The properties of the system as well as calibration and measurement results will be presented

  12. Magnetoresistive magnetometer for space science applications

    International Nuclear Information System (INIS)

    Brown, P; Beek, T; Carr, C; O’Brien, H; Cupido, E; Oddy, T; Horbury, T S

    2012-01-01

    Measurement of the in situ dc magnetic field on space science missions is most commonly achieved using instruments based on fluxgate sensors. Fluxgates are robust, reliable and have considerable space heritage; however, their mass and volume are not optimized for deployment on nano or picosats. We describe a new magnetometer design demonstrating science measurement capability featuring significantly lower mass, volume and to a lesser extent power than a typical fluxgate. The instrument employs a sensor based on anisotropic magnetoresistance (AMR) achieving a noise floor of less than 50 pT Hz −1/2 above 1 Hz on a 5 V bridge bias. The instrument range is scalable up to ±50 000 nT and the three-axis sensor mass and volume are less than 10 g and 10 cm 3 , respectively. The ability to switch the polarization of the sensor's easy axis and apply magnetic feedback is used to build a driven first harmonic closed loop system featuring improved linearity, gain stability and compensation of the sensor offset. A number of potential geospace applications based on the initial instrument results are discussed including attitude control systems and scientific measurement of waves and structures in the terrestrial magnetosphere. A flight version of the AMR magnetometer will fly on the TRIO-CINEMA mission due to be launched in 2012. (paper)

  13. Absorbed dose by a CMOS in radiotherapy

    International Nuclear Information System (INIS)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

    2011-10-01

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  14. Battlefield Applications for the Polatomic 2000 Magnetometer/Gradiometer

    National Research Council Canada - National Science Library

    Kuhlman, G

    2002-01-01

    ... He(4) scalar magnetometer/gradiometer. A major innovation in the P-2000 helium magnetometer is the introduction of a laser pump source to replace the conventional RF discharge helium lamp used in the Navy AN/ASQ-81/208 MAD Set...

  15. Choice of Magnetometers and Gradiometers after Signal Space Separation.

    Science.gov (United States)

    Garcés, Pilar; López-Sanz, David; Maestú, Fernando; Pereda, Ernesto

    2017-12-16

    Modern Elekta Neuromag MEG devices include 102 sensor triplets containing one magnetometer and two planar gradiometers. The first processing step is often a signal space separation (SSS), which provides a powerful noise reduction. A question commonly raised by researchers and reviewers relates to which data should be employed in analyses: (1) magnetometers only, (2) gradiometers only, (3) magnetometers and gradiometers together. The MEG community is currently divided with regard to the proper answer. First, we provide theoretical evidence that both gradiometers and magnetometers result from the backprojection of the same SSS components. Then, we compare resting state and task-related sensor and source estimations from magnetometers and gradiometers in real MEG recordings before and after SSS. SSS introduced a strong increase in the similarity between source time series derived from magnetometers and gradiometers (r² = 0.3-0.8 before SSS and r² > 0.80 after SSS). After SSS, resting state power spectrum and functional connectivity, as well as visual evoked responses, derived from both magnetometers and gradiometers were highly similar (Intraclass Correlation Coefficient > 0.8, r² > 0.8). After SSS, magnetometer and gradiometer data are estimated from a single set of SSS components (usually ≤ 80). Equivalent results can be obtained with both sensor types in typical MEG experiments.

  16. Digital fluxgate magnetometer for the "Astrid-2" satellite

    DEFF Research Database (Denmark)

    Pedersen, Erik Bøje; Primdahl, Fritz; Petersen, Jan Raagaard

    1999-01-01

    The design and performance of the Astrid-2 magnetometer are described. The magnetometer uses mathematical routines implemented by software for commercially available digital dignal processors to determine the magnetic field from the fluxgate sensor. The sensor is from the latest generation of amo...

  17. Analysing Harmonic Motions with an iPhone's Magnetometer

    Science.gov (United States)

    Yavuz, Ahmet; Temiz, Burak Kagan

    2016-01-01

    In this paper, we propose an experiment for analysing harmonic motion using an iPhone's (or iPad's) magnetometer. This experiment consists of the detection of magnetic field variations obtained from an iPhone's magnetometer sensor. A graph of harmonic motion is directly displayed on the iPhone's screen using the "Sensor Kinetics"…

  18. CMOS Integrated Carbon Nanotube Sensor

    International Nuclear Information System (INIS)

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-01-01

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  19. Advanced CMOS device technologies for 45 nm node and below

    Directory of Open Access Journals (Sweden)

    A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak and S. Biesemans

    2007-01-01

    Full Text Available We review and discuss the latest developments and technology options for 45 nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices. One of the main metal gate (MG candidates for scaled CMOS technologies are fully silicided (FUSI gates. In this work, by means of a selective and controlled poly etch-back integration process, dual work-function Ni-based FUSI/HfSiON CMOS circuits with record ring oscillator performance (high-VT are reported (17 ps at VDD=1.1 V and 20 pA/μm Ioff, meeting the ITRS 45 nm node requirement for low-power (LP CMOS. Compatibility of FUSI and other MG with known stress boosters like stressed CESL (contact-etch-stop-layer with high intrinsic stress or embedded SiGe in the pMOS S/D regions is validated. To obtain MuGFET devices that are competitive, as compared to conventional planar bulk devices, and that meet the stringent drive and leakage current requirements for the 32 nm node and beyond, higher channel mobilities are required. Results obtained by several strain engineering methods are presented here.

  20. Hall probe magnetometer for SSC magnet cables

    International Nuclear Information System (INIS)

    Cross, R.W.; Goldfarb, R.B.

    1991-01-01

    The authors of this paper constructed a Hall probe magnetometer to measure the magnetization hysteresis loops of Superconducting Super Collider magnet cables. The instrument uses two Hall-effect field sensors to measure the applied field H and the magnetic induction B. Magnetization M is calculated from the difference of the two quantities. The Hall probes are centered coaxially in the bore of a superconducting solenoid with the B probe against the sample's broad surface. An alternative probe arrangement, in which M is measured directly, aligns the sample probe parallel to the field. The authors measured M as a function of H and field cycle rate both with and without a dc transport current. Flux creep as a function of current was measured from the dependence of ac loss on the cycling rate and from the decay of magnetization with time. Transport currents up to 20% of the critical current have minimal effect on magnetization and flux creep

  1. Quantum critical environment assisted quantum magnetometer

    Science.gov (United States)

    Jaseem, Noufal; Omkar, S.; Shaji, Anil

    2018-04-01

    A central qubit coupled to an Ising ring of N qubits, operating close to a critical point is investigated as a potential precision quantum magnetometer for estimating an applied transverse magnetic field. We compute the quantum Fisher information for the central, probe qubit with the Ising chain initialized in its ground state or in a thermal state. The non-unitary evolution of the central qubit due to its interaction with the surrounding Ising ring enhances the accuracy of the magnetic field measurement. Near the critical point of the ring, Heisenberg-like scaling of the precision in estimating the magnetic field is obtained when the ring is initialized in its ground state. However, for finite temperatures, the Heisenberg scaling is limited to lower ranges of N values.

  2. Compatible Lie Bialgebras

    International Nuclear Information System (INIS)

    Wu Ming-Zhong; Bai Cheng-Ming

    2015-01-01

    A compatible Lie algebra is a pair of Lie algebras such that any linear combination of the two Lie brackets is a Lie bracket. We construct a bialgebra theory of compatible Lie algebras as an analogue of a Lie bialgebra. They can also be regarded as a “compatible version” of Lie bialgebras, that is, a pair of Lie bialgebras such that any linear combination of the two Lie bialgebras is still a Lie bialgebra. Many properties of compatible Lie bialgebras as the “compatible version” of the corresponding properties of Lie bialgebras are presented. In particular, there is a coboundary compatible Lie bialgebra theory with a construction from the classical Yang–Baxter equation in compatible Lie algebras as a combination of two classical Yang–Baxter equations in Lie algebras. Furthermore, a notion of compatible pre-Lie algebra is introduced with an interpretation of its close relation with the classical Yang–Baxter equation in compatible Lie algebras which leads to a construction of the solutions of the latter. As a byproduct, the compatible Lie bialgebras fit into the framework to construct non-constant solutions of the classical Yang–Baxter equation given by Golubchik and Sokolov. (paper)

  3. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  4. CMOS VLSI Active-Pixel Sensor for Tracking

    Science.gov (United States)

    Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

    2004-01-01

    An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

  5. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  6. High transition-temperature SQUID magnetometers and practical applications

    International Nuclear Information System (INIS)

    Dantsker, E.; Lawrence Berkeley National Lab., CA

    1997-05-01

    The design, fabrication and performance of SQUID magnetometers based on thin films of the high-transition temperature superconductor YBa 2 Cu 3 O 7-x (YBCO) are described. Essential to the achieving high magnetic field resolution at low frequencies is the elimination of 1/f flux noise due to thermally activated hopping of flux vortices between pinning sites in the superconducting films. Through improvements in processing, 1/f noise in single layer YBCO thin films and YBCO-SrTiO 3 -YBCO trilayers was systematically reduced to allow fabrication of sensitive SQUID magnetometers. Both single-layer directly coupled SQUID magnetometers and multilayer magnetometers were fabricated, based on the dc SQUID with bicrystal grain boundary Josephson junctions. Multilayer magnetometers had a lower magnetic field noise for a given physical size due to greater effective sensing areas. A magnetometer consisting of a SQUID inductively coupled to the multiturn input coil of a flux transformer in a flip-chip arrangement had a field noise of 27 fT Hz -1/2 at 1 Hz and 8.5 fT Hz -1/2 at 1 kHz. A multiloop multilayer SQUID magnetometer had a field noise of 37 fT Hz -1/2 at 1 Hz and 18 fT Hz -1/2 at 1 kHz. A three-axis SQUID magnetometer for geophysical applications was constructed and operated in the field in the presence of 60 Hz and radiofrequency noise. Clinical quality magnetocardiograms were measured using multilayer SQUID magnetometers in a magnetically shielded room

  7. High transition-temperature SQUID magnetometers and practical applications

    Energy Technology Data Exchange (ETDEWEB)

    Dantsker, Eugene [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1997-05-01

    The design, fabrication and performance of SQUID magnetometers based on thin films of the high-transition temperature superconductor YBa2Cu3O7-x (YBCO) are described. Essential to the achieving high magnetic field resolution at low frequencies is the elimination of 1/f flux noise due to thermally activated hopping of flux vortices between pinning sites in the superconducting films. Through improvements in processing, 1/f noise in single layer YBCO thin films and YBCO-SrTiO3-YBCO trilayers was systematically reduced to allow fabrication of sensitive SQUID magnetometers. Both single-layer directly coupled SQUID magnetometers and multilayer magnetometers were fabricated, based on the dc SQUID with bicrystal grain boundary Josephson junctions. Multilayer magnetometers had a lower magnetic field noise for a given physical size due to greater effective sensing areas. A magnetometer consisting of a SQUID inductively coupled to the multiturn input coil of a flux transformer in a flip-chip arrangement had a field noise of 27 fT Hz-1/2 at 1 Hz and 8.5 fT Hz-1/2 at 1 kHz. A multiloop multilayer SQUID magnetometer had a field noise of 37 fT Hz-1/2 at 1 Hz and 18 fT Hz-1/2 at 1 kHz. A three-axis SQUID magnetometer for geophysical applications was constructed and operated in the field in the presence of 60 Hz and radiofrequency noise. Clinical quality magnetocardiograms were measured using multilayer SQUID magnetometers in a magnetically shielded room.

  8. High efficiency grating couplers based on shared process with CMOS MOSFETs

    International Nuclear Information System (INIS)

    Qiu Chao; Sheng Zhen; Wu Ai-Min; Wang Xi; Zou Shi-Chang; Gan Fu-Wan; Li Le; Albert Pang

    2013-01-01

    Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal—oxide—semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as a gate in the CMOS metal—oxide—semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ∼ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  9. A 3-Axis Miniature Magnetic Sensor Based on a Planar Fluxgate Magnetometer with an Orthogonal Fluxguide

    Directory of Open Access Journals (Sweden)

    Chih-Cheng Lu

    2015-06-01

    Full Text Available A new class of tri-axial miniature magnetometer consisting of a planar fluxgate structure with an orthogonal ferromagnetic fluxguide centrally situated over the magnetic cores is presented. The magnetic sensor possesses a cruciform ferromagnetic core placed diagonally upon the square excitation coil under which two pairs of pick-up coils for in-plane field detection are allocated. Effective principles and analysis of the magnetometer for 3-D field vectors are described and verified by numerically electromagnetic simulation for the excitation and magnetization of the ferromagnetic cores. The sensor is operated by applying the second-harmonic detection technique that can verify V-B relationship and device responsivity. Experimental characterization of the miniature fluxgate device demonstrates satisfactory spatial magnetic field detection results in terms of responsivity and noise spectrum. As a result, at an excitation frequency of 50 kHz, a maximum in-plane responsivity of 122.4 V/T appears and a maximum out-of-plane responsivity of 11.6 V/T is obtained as well. The minimum field noise spectra are found to be 0.11 nT/√Hz and 6.29 nT/√Hz, respectively, in X- and Z-axis at 1 Hz under the same excitation frequency. Compared with the previous tri-axis fluxgate devices, this planar magnetic sensor with an orthogonal fluxguide provides beneficial enhancement in both sensory functionality and manufacturing simplicity. More importantly, this novel device concept is considered highly suitable for the extension to a silicon sensor made by the current CMOS-MEMS technologies, thus emphasizing its emerging applications of field detection in portable industrial electronics.

  10. High-Sensitivity Low-Noise Miniature Fluxgate Magnetometers Using a Flip Chip Conceptual Design

    Directory of Open Access Journals (Sweden)

    Chih-Cheng Lu

    2014-07-01

    Full Text Available This paper presents a novel class of miniature fluxgate magnetometers fabricated on a print circuit board (PCB substrate and electrically connected to each other similar to the current “flip chip” concept in semiconductor package. This sensor is soldered together by reversely flipping a 5 cm × 3 cm PCB substrate to the other identical one which includes dual magnetic cores, planar pick-up coils, and 3-D excitation coils constructed by planar Cu interconnections patterned on PCB substrates. Principles and analysis of the fluxgate sensor are introduced first, and followed by FEA electromagnetic modeling and simulation for the proposed sensor. Comprehensive characteristic experiments of the miniature fluxgate device exhibit favorable results in terms of sensitivity (or “responsivity” for magnetometers and field noise spectrum. The sensor is driven and characterized by employing the improved second-harmonic detection technique that enables linear V-B correlation and responsivity verification. In addition, the double magnitude of responsivity measured under very low frequency (1 Hz magnetic fields is experimentally demonstrated. As a result, the maximum responsivity of 593 V/T occurs at 50 kHz of excitation frequency with the second harmonic wave of excitation; however, the minimum magnetic field noise is found to be 0.05 nT/Hz1/2 at 1 Hz under the same excitation. In comparison with other miniature planar fluxgates published to date, the fluxgate magnetic sensor with flip chip configuration offers advances in both device functionality and fabrication simplicity. More importantly, the novel design can be further extended to a silicon-based micro-fluxgate chip manufactured by emerging CMOS-MEMS technologies, thus enriching its potential range of applications in modern engineering and the consumer electronics market.

  11. A 3-Axis Miniature Magnetic Sensor Based on a Planar Fluxgate Magnetometer with an Orthogonal Fluxguide.

    Science.gov (United States)

    Lu, Chih-Cheng; Huang, Jeff

    2015-06-19

    A new class of tri-axial miniature magnetometer consisting of a planar fluxgate structure with an orthogonal ferromagnetic fluxguide centrally situated over the magnetic cores is presented. The magnetic sensor possesses a cruciform ferromagnetic core placed diagonally upon the square excitation coil under which two pairs of pick-up coils for in-plane field detection are allocated. Effective principles and analysis of the magnetometer for 3-D field vectors are described and verified by numerically electromagnetic simulation for the excitation and magnetization of the ferromagnetic cores. The sensor is operated by applying the second-harmonic detection technique that can verify V-B relationship and device responsivity. Experimental characterization of the miniature fluxgate device demonstrates satisfactory spatial magnetic field detection results in terms of responsivity and noise spectrum. As a result, at an excitation frequency of 50 kHz, a maximum in-plane responsivity of 122.4 V/T appears and a maximum out-of-plane responsivity of 11.6 V/T is obtained as well. The minimum field noise spectra are found to be 0.11 nT/√Hz and 6.29 nT/√Hz, respectively, in X- and Z-axis at 1 Hz under the same excitation frequency. Compared with the previous tri-axis fluxgate devices, this planar magnetic sensor with an orthogonal fluxguide provides beneficial enhancement in both sensory functionality and manufacturing simplicity. More importantly, this novel device concept is considered highly suitable for the extension to a silicon sensor made by the current CMOS-MEMS technologies, thus emphasizing its emerging applications of field detection in portable industrial electronics.

  12. High-Sensitivity Low-Noise Miniature Fluxgate Magnetometers Using a Flip Chip Conceptual Design

    Science.gov (United States)

    Lu, Chih-Cheng; Huang, Jeff; Chiu, Po-Kai; Chiu, Shih-Liang; Jeng, Jen-Tzong

    2014-01-01

    This paper presents a novel class of miniature fluxgate magnetometers fabricated on a print circuit board (PCB) substrate and electrically connected to each other similar to the current “flip chip” concept in semiconductor package. This sensor is soldered together by reversely flipping a 5 cm × 3 cm PCB substrate to the other identical one which includes dual magnetic cores, planar pick-up coils, and 3-D excitation coils constructed by planar Cu interconnections patterned on PCB substrates. Principles and analysis of the fluxgate sensor are introduced first, and followed by FEA electromagnetic modeling and simulation for the proposed sensor. Comprehensive characteristic experiments of the miniature fluxgate device exhibit favorable results in terms of sensitivity (or “responsivity” for magnetometers) and field noise spectrum. The sensor is driven and characterized by employing the improved second-harmonic detection technique that enables linear V-B correlation and responsivity verification. In addition, the double magnitude of responsivity measured under very low frequency (1 Hz) magnetic fields is experimentally demonstrated. As a result, the maximum responsivity of 593 V/T occurs at 50 kHz of excitation frequency with the second harmonic wave of excitation; however, the minimum magnetic field noise is found to be 0.05 nT/Hz1/2 at 1 Hz under the same excitation. In comparison with other miniature planar fluxgates published to date, the fluxgate magnetic sensor with flip chip configuration offers advances in both device functionality and fabrication simplicity. More importantly, the novel design can be further extended to a silicon-based micro-fluxgate chip manufactured by emerging CMOS-MEMS technologies, thus enriching its potential range of applications in modern engineering and the consumer electronics market. PMID:25196107

  13. High-sensitivity low-noise miniature fluxgate magnetometers using a flip chip conceptual design.

    Science.gov (United States)

    Lu, Chih-Cheng; Huang, Jeff; Chiu, Po-Kai; Chiu, Shih-Liang; Jeng, Jen-Tzong

    2014-07-30

    This paper presents a novel class of miniature fluxgate magnetometers fabricated on a print circuit board (PCB) substrate and electrically connected to each other similar to the current "flip chip" concept in semiconductor package. This sensor is soldered together by reversely flipping a 5 cm × 3 cm PCB substrate to the other identical one which includes dual magnetic cores, planar pick-up coils, and 3-D excitation coils constructed by planar Cu interconnections patterned on PCB substrates. Principles and analysis of the fluxgate sensor are introduced first, and followed by FEA electromagnetic modeling and simulation for the proposed sensor. Comprehensive characteristic experiments of the miniature fluxgate device exhibit favorable results in terms of sensitivity (or "responsivity" for magnetometers) and field noise spectrum. The sensor is driven and characterized by employing the improved second-harmonic detection technique that enables linear V-B correlation and responsivity verification. In addition, the double magnitude of responsivity measured under very low frequency (1 Hz) magnetic fields is experimentally demonstrated. As a result, the maximum responsivity of 593 V/T occurs at 50 kHz of excitation frequency with the second harmonic wave of excitation; however, the minimum magnetic field noise is found to be 0.05 nT/Hz(1/2) at 1 Hz under the same excitation. In comparison with other miniature planar fluxgates published to date, the fluxgate magnetic sensor with flip chip configuration offers advances in both device functionality and fabrication simplicity. More importantly, the novel design can be further extended to a silicon-based micro-fluxgate chip manufactured by emerging CMOS-MEMS technologies, thus enriching its potential range of applications in modern engineering and the consumer electronics market.

  14. Search Coil vs. Fluxgate Magnetometer Measurements at Interplanetary Shocks

    Science.gov (United States)

    Wilson, L.B., III

    2012-01-01

    We present magnetic field observations at interplanetary shocks comparing two different sample rates showing significantly different results. Fluxgate magnetometer measurements show relatively laminar supercritical shock transitions at roughly 11 samples/s. Search coil magnetometer measurements at 1875 samples/s, however, show large amplitude (dB/B as large as 2) fluctuations that are not resolved by the fluxgate magnetometer. We show that these fluctuations, identified as whistler mode waves, would produce a significant perturbation to the shock transition region changing the interpretation from laminar to turbulent. Thus, previous observations of supercritical interplanetary shocks classified as laminar may have been under sampled.

  15. Self-Compensating Excitation of Fluxgate Sensors for Space Magnetometers

    DEFF Research Database (Denmark)

    Cerman, Alec; Merayo, José M.G.; Brauer, Peter

    2008-01-01

    The paper presents design and implementation of the new self-compensating excitation circuitry to the new generation of high-precise space vector magnetometers. The application starts with complex study including design of new robust model of the non-linear inductor leading to investigation...... of the most crucial points, continuous by design of the self-compensating excitation unit and concludes with unit complex testing and application to the magnetometer. The application of the self-compensation of the excitation decreases temperature drift of the magnetometer offset caused by the temperature...

  16. Analysing harmonic motions with an iPhone’s magnetometer

    Science.gov (United States)

    Yavuz, Ahmet; Kağan Temiz, Burak

    2016-05-01

    In this paper, we propose an experiment for analysing harmonic motion using an iPhone’s (or iPad’s) magnetometer. This experiment consists of the detection of magnetic field variations obtained from an iPhone’s magnetometer sensor. A graph of harmonic motion is directly displayed on the iPhone’s screen using the Sensor Kinetics application. Data from this application was analysed with Eureqa software to establish the equation of the harmonic motion. Analyses show that the use of an iPhone’s magnetometer to analyse harmonic motion is a practical and effective method for small oscillations and frequencies less than 15-20 Hz.

  17. GIOTTO MAGNETOMETER 8 SECOND DATA V1.0

    Data.gov (United States)

    National Aeronautics and Space Administration — The main objective of the Giotto Magnetometer Experiment is the investigation of the interaction between Comet Halley and the solar wind at a distance of 0.9 AU from...

  18. Developement of a Fluxgate Magnetometer for the KITSAT-3 Satellite

    Directory of Open Access Journals (Sweden)

    S. H. Hwang

    1997-12-01

    Full Text Available The magnetometer is one of the most important payloads of scientific satellites to monitor the near-earth space environment. The electromagnetic variations of the space environment can be observed with the electric and magnetic field measurements. In practice, it is well known that the measurement of magnetic fields needs less technical complexities than that of electric fields in space. Therefore the magnetometer has long been recognized as one of the basic payloads for the scientific satellites. In this paper, we discuss the scientific fluxgate magnetometer which will be on board the KITSAT-3. The main circuit design of the present magnetometer is based on that of KISAT-1 and -2 but its facilities have been re-designed to improve the resolution to about 5nT for scientific purpose. The calibration and noise level test of this circuit have been performed at the laboratory of the Tierra Tecnica company in Japan.

  19. Differential Search Coils Based Magnetometers: Conditioning, Magnetic Sensitivity, Spatial Resolution

    Directory of Open Access Journals (Sweden)

    Timofeeva Maria

    2012-03-01

    Full Text Available A theoretical and experimental comparison of optimized search coils based magnetometers, operating either in the Flux mode or in the classical Lenz-Faraday mode, is presented. The improvements provided by the Flux mode in terms of bandwidth and measuring range of the sensor are detailed. Theory, SPICE model and measurements are in good agreement. The spatial resolution of the sensor is studied which is an important parameter for applications in non destructive evaluation. A general expression of the magnetic sensitivity of search coils sensors is derived. Solutions are proposed to design magnetometers with reduced weight and volume without degrading the magnetic sensitivity. An original differential search coil based magnetometer, made of coupled coils, operating in flux mode and connected to a differential transimpedance amplifier is proposed. It is shown that this structure is better in terms of volume occupancy than magnetometers using two separated coils without any degradation in magnetic sensitivity. Experimental results are in good agreement with calculations.

  20. VOYAGER 1 SATURN MAGNETOMETER RESAMPLED DATA 9.60 SEC

    Data.gov (United States)

    National Aeronautics and Space Administration — This data set includes Voyager 1 Saturn encounter magnetometer data that have been resampled at a 9.6 second sample rate. The data set is composed of 6 columns: 1)...

  1. Self-Calibrating Vector Helium Magnetometer (SVHM), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I SBIR proposal describes proposed development of a conceptual design for a Self-Calibrating Vector Helium Magnetometer (SVHM) for design and fabrication...

  2. VOYAGER 2 JUPITER MAGNETOMETER RESAMPLED DATA 48.0 SEC

    Data.gov (United States)

    National Aeronautics and Space Administration — This data set includes Voyager 2 Jupiter encounter magnetometer data that have been resampled at a 48.0 second sample rate. The data set is composed of 6 columns: 1)...

  3. Ultrasensitive magnetometers based on rotational magnetic excitation

    International Nuclear Information System (INIS)

    Hristoforou, E.; Svec, P. Sr.

    2014-01-01

    Three new types of fluxgate magnetometers are presented in this paper, able to monitor the three components of the ambient field, all of them based on the principle of rotational excitation field. The first type is based on Yttrium- Iron Garnet (YIG) single crystal film, magnetized with rotational field on its plane, where the 2"n"d, 4"t"h and 6"t"h harmonics offer the three components of the ambient field with sensitivity better than 1 pT at 0.2 Hz, its size being 25 cm"3. The second type is based on permalloy film, where the rotational excitation field on its plane offers change of magnetoresistance with sensitivity better than 10 pT at 1 Hz, uncertainty of 1 ppm and size ∼ 8 cm"3. The third type, is based on amorphous film, where the rotation field mode offer sensitivity better than 100 pT at 1 Hz, uncertainty of 10 ppm and size ∼ 10 mm"3. (authors)

  4. The Search-Coil Magnetometer for MMS

    Science.gov (United States)

    Le Contel, O.; Leroy, P.; Roux, A.; Coillot, C.; Alison, D.; Bouabdellah, A.; Mirioni, L.; Meslier, L.; Galic, A.; Vassal, M. C.; Torbert, R. B.; Needell, J.; Rau, D.; Dors, I.; Ergun, R. E.; Westfall, J.; Summers, D.; Wallace, J.; Magnes, W.; Valavanoglou, A.; Olsson, G.; Chutter, M.; Macri, J.; Myers, S.; Turco, S.; Nolin, J.; Bodet, D.; Rowe, K.; Tanguy, M.; de la Porte, B.

    2016-03-01

    The tri-axial search-coil magnetometer (SCM) belongs to the FIELDS instrumentation suite on the Magnetospheric Multiscale (MMS) mission (Torbert et al. in Space Sci. Rev. (2014), this issue). It provides the three magnetic components of the waves from 1 Hz to 6 kHz in particular in the key regions of the Earth's magnetosphere namely the subsolar region and the magnetotail. Magnetospheric plasmas being collisionless, such a measurement is crucial as the electromagnetic waves are thought to provide a way to ensure the conversion from magnetic to thermal and kinetic energies allowing local or global reconfigurations of the Earth's magnetic field. The analog waveforms provided by the SCM are digitized and processed inside the digital signal processor (DSP), within the Central Electronics Box (CEB), together with the electric field data provided by the spin-plane double probe (SDP) and the axial double probe (ADP). On-board calibration signal provided by DSP allows the verification of the SCM transfer function once per orbit. Magnetic waveforms and on-board spectra computed by DSP are available at different time resolution depending on the selected mode. The SCM design is described in details as well as the different steps of the ground and in-flight calibrations.

  5. Ultra-sensitive Magnetic Microscopy with an Atomic Magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Jin [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-08-19

    The PowerPoint presentation focused on research goals, specific information about the atomic magnetometer, response and resolution factors of the SERF magnetometer, FC+AM systems, tests of field transfer and resolution on FC, gradient cancellation, testing of AM performance, ideas for a multi-channel AM, including preliminary sensitivity testing, and a description of a 6 channel DAQ system. A few ideas for future work ended the presentation.

  6. Neutron absorbed dose in a pacemaker CMOS

    International Nuclear Information System (INIS)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

    2012-01-01

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

  7. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2012-06-15

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

  8. CMOS test and evaluation a physical perspective

    CERN Document Server

    Bhushan, Manjul

    2015-01-01

    This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

  9. Analog filters in nanometer CMOS

    CERN Document Server

    Uhrmann, Heimo; Zimmermann, Horst

    2014-01-01

    Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics ...

  10. CMOS Analog IC Design: Fundamentals

    OpenAIRE

    Bruun, Erik

    2018-01-01

    This book is intended for use as the main textbook for an introductory course in CMOS analog integrated circuit design. It is aimed at electronics engineering students who have followed basic courses in mathematics, physics, circuit theory, electronics and signal processing. It takes the students directly from a basic level to a level where they can start working on simple analog IC design projects or continue their studies using more advanced textbooks in the field. A distinct feature of thi...

  11. Magnetometer and Gyroscope Calibration Method with Level Rotation

    Directory of Open Access Journals (Sweden)

    Zongkai Wu

    2018-03-01

    Full Text Available Micro electro mechanical system (MEMS gyroscopes and magnetometers are usually integrated into a sensor module or chip and widely used in a variety of applications. In existing integrated gyroscope and magnetometer calibration methods, rotation in all possible orientations is a necessary condition for a good calibration result. However, rotation around two or more axes is difficult to attain, as it is limited by the range of movement of vehicles such as cars, ships, or planes. To solve this problem, this paper proposes an integrated magnetometer and gyroscope calibration method with level rotation. The proposed method presents a redefined magnetometer output model using level attitude. New gyroscope and magnetometer calibration models are then deduced. In addition, a simplified cubature Kalman filter (CKF is established to estimate calibration parameters. This method possesses important value for application in actual systems, as it only needs level rotation for real-time calibration of gyroscopes and magnetometers. Theoretical analysis and test results verify the validity and feasibility of this method.

  12. High-voltage CMOS detectors

    International Nuclear Information System (INIS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-01-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  13. High-voltage CMOS detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

    2016-07-11

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  14. CMOS optimization for radiation hardness

    International Nuclear Information System (INIS)

    Derbenwick, G.F.; Fossum, J.G.

    1975-01-01

    Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

  15. Absorbed dose by a CMOS in radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  16. Microelectronic test structures for CMOS technology

    CERN Document Server

    Ketchen, Mark B

    2011-01-01

    Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

  17. Compatibility of Mating Preferences

    OpenAIRE

    Bingol, Haluk O.; Basar, Omer

    2016-01-01

    Human mating is a complex phenomenon. Although men and women have different preferences in mate selection, there should be compatibility in these preferences since human mating requires agreement of both parties. We investigate how compatible the mating preferences of men and women are in a given property such as age, height, education and income. We use dataset of a large online dating site (N = 44, 255 users). (i) Our findings are based on the "actual behavior" of users trying to find a dat...

  18. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    International Nuclear Information System (INIS)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

    2012-01-01

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

  19. JPL CMOS Active Pixel Sensor Technology

    Science.gov (United States)

    Fossum, E. R.

    1995-01-01

    This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

  20. Design and implementation of JOM-3 Overhauser magnetometer analog circuit

    Science.gov (United States)

    Zhang, Xiao; Jiang, Xue; Zhao, Jianchang; Zhang, Shuang; Guo, Xin; Zhou, Tingting

    2017-09-01

    Overhauser magnetometer, a kind of static-magnetic measurement system based on the Overhauser effect, has been widely used in archaeological exploration, mineral resources exploration, oil and gas basin structure detection, prediction of engineering exploration environment, earthquakes and volcanic eruotions, object magnetic measurement and underground buried booty exploration. Overhauser magnetometer plays an important role in the application of magnetic field measurement for its characteristics of small size, low power consumption and high sensitivity. This paper researches the design and the application of the analog circuit of JOM-3 Overhauser magnetometer. First, the Larmor signal output by the probe is very weak. In order to obtain the signal with high signal to noise rstio(SNR), the design of pre-amplifier circuit is the key to improve the quality of the system signal. Second, in this paper, the effectual step which could improve the frequency characters of bandpass filter amplifier circuit were put forward, and theoretical analysis was made for it. Third, the shaping circuit shapes the amplified sine signal into a square wave signal which is suitable for detecting the rising edge. Fourth, this design elaborated the optimized choice of tuning circuit, so the measurement range of the magnetic field can be covered. Last, integrated analog circuit testing system was formed to detect waveform of each module. By calculating the standard deviation, the sensitivity of the improved Overhauser magnetometer is 0.047nT for Earth's magnetic field observation. Experimental results show that the new magnetometer is sensitive to earth field measurement.

  1. Hybrid CMOS/Molecular Integrated Circuits

    Science.gov (United States)

    Stan, M. R.; Rose, G. S.; Ziegler, M. M.

    CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

  2. Optoelectronic circuits in nanometer CMOS technology

    CERN Document Server

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  3. CMOS foveal image sensor chip

    Science.gov (United States)

    Bandera, Cesar (Inventor); Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Xia, Shu (Inventor)

    2002-01-01

    A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

  4. Si light-emitting device in integrated photonic CMOS ICs

    Science.gov (United States)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  5. Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection.

    Science.gov (United States)

    Nasri, Bayan; Wu, Ting; Alharbi, Abdullah; You, Kae-Dyi; Gupta, Mayank; Sebastian, Sunit P; Kiani, Roozbeh; Shahrjerdi, Davood

    2017-12-01

    We introduce a hybrid CMOS-graphene sensor array for subsecond measurement of dopamine via fast-scan cyclic voltammetry (FSCV). The prototype chip has four independent CMOS readout channels, fabricated in a 65-nm process. Using planar multilayer graphene as biologically compatible sensing material enables integration of miniaturized sensing electrodes directly above the readout channels. Taking advantage of the chemical specificity of FSCV, we introduce a region of interest technique, which subtracts a large portion of the background current using a programmable low-noise constant current at about the redox potentials. We demonstrate the utility of this feature for enhancing the sensitivity by measuring the sensor response to a known dopamine concentration in vitro at three different scan rates. This strategy further allows us to significantly reduce the dynamic range requirements of the analog-to-digital converter (ADC) without compromising the measurement accuracy. We show that an integrating dual-slope ADC is adequate for digitizing the background-subtracted current. The ADC operates at a sampling frequency of 5-10 kHz and has an effective resolution of about 60 pA, which corresponds to a theoretical dopamine detection limit of about 6 nM. Our hybrid sensing platform offers an effective solution for implementing next-generation FSCV devices that can enable precise recording of dopamine signaling in vivo on a large scale.

  6. A CMOS silicon spin qubit

    Science.gov (United States)

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  7. Calibration of three-axis magnetometers with differential evolution algorithm

    International Nuclear Information System (INIS)

    Pang, Hongfeng; Zhang, Qi; Wang, Wei; Wang, Junya; Li, Ji; Luo, Shitu; Wan, Chengbiao; Chen, Dixiang; Pan, Mengchun; Luo, Feilu

    2013-01-01

    The accuracy of three-axis magnetometers is influenced by different scale and bias of each axis and nonorthogonality between axes. One limitation of traditional iteration methods is that initial parameters influence the calibration, thus leading to the local optimal or wrong results. In this paper, a new method is proposed to calibrate three-axis magnetometers. To employ this method, a nonmagnetic rotation platform, a proton magnetometer, a DM-050 three-axis magnetometer and the differential evolution (DE) algorithm are used. The performance of this calibration method is analyzed with simulation and experiment. In simulation, the calibration results of DE, unscented Kalman filter (UKF), recursive least squares (RLS) and genetic algorithm (GA) are compared. RMS error using DE is least, which is reduced from 81.233 nT to 1.567 nT. Experimental results show that comparing with UKF, RLS and GA, the DE algorithm has not only the least calibration error but also the best robustness. After calibration, RMS error is reduced from 68.914 nT to 2.919 nT. In addition, the DE algorithm is not sensitive to initial parameters, which is an important advantage compared with traditional iteration algorithms. The proposed algorithm can avoid the troublesome procedure to select suitable initial parameters, thus it can improve the calibration performance of three-axis magnetometers. - Highlights: • The calibration results and robustness of UKF, GA, RLS and DE algorithm are analyzed. • Calibration error of DE is the least in simulation and experiment. • Comparing with traditional calibration algorithms, DE is not sensitive to initial parameters. • It can improve the calibration performance of three-axis magnetometers

  8. Calibration of the Ørsted vector magnetometer

    DEFF Research Database (Denmark)

    Olsen, Nils; Tøffner-Clausen, Lars; Sabaka, T.J.

    2003-01-01

    The vector fluxgate magnetometer of the Orsted satellite is routinely calibrated by comparing its output with measurements of the absolute magnetic intensity from the Overhauser instrument, which is the second magnetometer of the satellite. We describe the method used for and the result obtained...... coordinate system and the reference system of the star imager. This is done by comparing the magnetic and attitude measurements with a model of Earth's magnetic field. The Euler angles describing this rotation are determined in this way with an accuracy of better than 4 arcsec....

  9. Microfabricated optically pumped magnetometer arrays for biomedical imaging

    Science.gov (United States)

    Perry, A. R.; Sheng, D.; Krzyzewski, S. P.; Geller, S.; Knappe, S.

    2017-02-01

    Optically-pumped magnetometers have demonstrated magnetic field measurements as precise as the best superconducting quantum interference device magnetometers. Our group develops miniature alkali atom-based magnetic sensors using microfabrication technology. Our sensors do not require cryogenic cooling, and can be positioned very close to the sample, making these sensors an attractive option for development in the medical community. We will present our latest chip-scale optically-pumped gradiometer developed for array applications to image magnetic fields from the brain noninvasively. These developments should lead to improved spatial resolution, and potentially sensitive measurements in unshielded environments.

  10. Electromagnetic induction imaging with a radio-frequency atomic magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Deans, Cameron; Marmugi, Luca, E-mail: l.marmugi@ucl.ac.uk; Hussain, Sarah; Renzoni, Ferruccio [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)

    2016-03-07

    We report on a compact, tunable, and scalable to large arrays imaging device, based on a radio-frequency optically pumped atomic magnetometer operating in magnetic induction tomography modality. Imaging of conductive objects is performed at room temperature, in an unshielded environment and without background subtraction. Conductivity maps of target objects exhibit not only excellent performance in terms of shape reconstruction but also demonstrate detection of sub-millimetric cracks and penetration of conductive barriers. The results presented here demonstrate the potential of a future generation of imaging instruments, which combine magnetic induction tomography and the unmatched performance of atomic magnetometers.

  11. Long-term vacuum tests of single-mode vertical cavity surface emitting laser diodes used for a scalar magnetometer

    Science.gov (United States)

    Hagen, C.; Ellmeier, M.; Piris, J.; Lammegger, R.; Jernej, I.; Magnes, W.; Murphy, E.; Pollinger, A.; Erd, C.; Baumjohann, W.

    2017-11-01

    Scalar magnetometers measure the magnitude of the magnetic field, while vector magnetometers (mostly fluxgate magnetometers) produce three-component outputs proportional to the magnitude and the direction of the magnetic field. While scalar magnetometers have a high accuracy, vector magnetometers suffer from parameter drifts and need to be calibrated during flight. In some cases, full science return can only be achieved by a combination of vector and scalar magnetometers.

  12. Socially compatible technology management

    International Nuclear Information System (INIS)

    Tschiedel, R.

    1989-01-01

    The public has a critical eye on the impacts of technology, and there is a growing awareness of the social impacts in addition to health hazards and economic and ecologic impacts. 'Socially compatible technology management' is the magic formula frequently used which has emerged as a political demand in the course of the social controversy about the hazards of large-scale technology. It marks a position in the conflict between those who declare existing market and policy instruments to be sufficient regulatory tools, and those who understand the incidents ranging from inadequacy to desaster as a warning, and call for more precaution in decisions with an impact on the future. The concept of 'social compatibility' has to be given shape by elaborating criteria and methods for achieving this goal. The book shows that social compatibility cannot sufficiently be defined either as a quality of a technology and of a socio-technical system (acceptability), or as the willingness of the people concerned to accept a technology (acceptance). The investigation explains by means of empirical analysis and examples that participation is the only way to combine acceptability and acceptance into a socially compatibly designed technology. The leading theoretical and political formula developed for this purpose is 'acquisition'. To put it in a provocative way: Man has to learn to manage and master technical systems as if they were an integral part of themselves. Which means, man has to acquire the required knowledge and skill in the changing social structures, and the real power of disposal. Sociology of technology is a branch of research that can and should give support in the process of designing and managing technological systems in a way compatible with social needs. (orig./HP) [de

  13. Carbon Nanotube Integration with a CMOS Process

    Science.gov (United States)

    Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

  14. CMOS sensors for atmospheric imaging

    Science.gov (United States)

    Pratlong, Jérôme; Burt, David; Jerram, Paul; Mayer, Frédéric; Walker, Andrew; Simpson, Robert; Johnson, Steven; Hubbard, Wendy

    2017-09-01

    Recent European atmospheric imaging missions have seen a move towards the use of CMOS sensors for the visible and NIR parts of the spectrum. These applications have particular challenges that are completely different to those that have driven the development of commercial sensors for applications such as cell-phone or SLR cameras. This paper will cover the design and performance of general-purpose image sensors that are to be used in the MTG (Meteosat Third Generation) and MetImage satellites and the technology challenges that they have presented. We will discuss how CMOS imagers have been designed with 4T pixel sizes of up to 250 μm square achieving good charge transfer efficiency, or low lag, with signal levels up to 2M electrons and with high line rates. In both devices a low noise analogue read-out chain is used with correlated double sampling to suppress the readout noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. Radiation hardness is a particular challenge for CMOS detectors and both of these sensors have been designed to be fully radiation hard with high latch-up and single-event-upset tolerances, which is now silicon proven on MTG. We will also cover the impact of ionising radiation on these devices. Because with such large pixels the photodiodes have a large open area, front illumination technology is sufficient to meet the detection efficiency requirements but with thicker than standard epitaxial silicon to give improved IR response (note that this makes latch up protection even more important). However with narrow band illumination reflections from the front and back of the dielectric stack on the top of the sensor produce Fabry-Perot étalon effects, which have been minimised with process modifications. We will also cover the addition of precision narrow band filters inside the MTG package to provide a complete imaging subsystem. Control of reflected light is also critical in obtaining the

  15. Evaluating Detection and Estimation Capabilities of Magnetometer-Based Vehicle Sensors

    Science.gov (United States)

    2012-05-01

    fluxgate magnetometers whose operating characteristics are well documented [1, 2]. Such magnetometers measure two perpendicular magnetic components of...of surveillance scenarios. As part of that work, this analysis focuses on UGS utilizing of two-axis fluxgate magnetometers . Two MOPs are 12 -60 -40 -20...Proceedings of the IEEE, 78(6):973–989, June 1990. [2] E. M. Billingsley and S. W. Billingsley. Fluxgate magnetometers . Proceedings of the IEEE, 5090(194

  16. Flexible-CMOS and biocompatible piezoelectric AlN material for MEMS applications

    International Nuclear Information System (INIS)

    Jackson, Nathan; Keeney, Lynette; Mathewson, Alan

    2013-01-01

    The development of a CMOS compatible flexible piezoelectric material is desired for numerous applications and in particular for biomedical MEMS devices. Aluminum nitride (AlN) is the most commonly used CMOS compatible piezoelectric material, which is typically deposited on Si in order to enhance the c-axis (002) crystal orientation which gives AlN its high piezoelectric properties. This paper reports on the successful deposition of AlN on polyimide (PI-2611) material. The AlN deposited has a FWHM (002) value of 5.1° and a piezoelectric d 33 value of 1.12 pm V −1 , and SEM images show high quality columnar grains. The highly crystalline AlN material is due to the semi-crystalline properties of the polyimide film used. Cytotoxicity testing showed the AlN/polyimide material to be non-toxic to 3T3 cells and primary neurons. Surface properties of the AlN/polyimide film were evaluated as they have a significant effect on the adhesion of cells to the film. The results show neurons adhering to the AlN surface. The results of this paper show the characterization of a new flexible-CMOS and biocompatible AlN/polyimide material for MEMS devices with improved crystallinity and piezoelectric properties. (paper)

  17. Design and analysis of miniature tri-axial fluxgate magnetometer

    Science.gov (United States)

    Zhi, Menghui; Tang, Liang; Qiao, Donghai

    2017-02-01

    The detection technology of weak magnetic field is widely used in Earth resource survey and geomagnetic navigation. Useful magnetic field information can be obtained by processing and analyzing the measurement data from magnetic sensors. A miniature tri-axial fluxgate magnetometer is proposed in this paper. This miniature tri-axial fluxgate magnetometer with ring-core structure has a dynamic range of the Earth’s field ±65,000 nT, resolution of several nT. It has three independent parts placed in three perpendicular planes for measuring three orthogonal magnetic field components, respectively. A field-programmable gate array (FPGA) is used to generate stimulation signal, analog-to-digital (A/D) convertor control signal, and feedback digital-to-analog (D/A) control signal. Design and analysis details are given to improve the dynamic range, sensitivity, resolution, and linearity. Our prototype was measured and compared with a commercial standard Magson fluxgate magnetometer as a reference. The results show that our miniature fluxgate magnetometer can follow the Magson’s change trend well. When used as a magnetic compass, our prototype only has ± 0.3∘ deviation compared with standard magnetic compass.

  18. The Pioneer 11 high-field fluxgate magnetometer

    Science.gov (United States)

    Acuna, M. H.; Ness, N. F.

    1973-01-01

    The High Field Fluxgate Magnetometer Experiment flow aboard the Pioneer 11 spacecraft to investigate Jupiter's magnetic field is described. The instrument extends the spacecraft's upper limit measurement capability by more than an order of magnitude to 17.3 gauss with minimum power and volume requirements.

  19. Small Fluxgate Magnetometers: Development and Future Trends in Spain

    Science.gov (United States)

    Ciudad, David; Díaz-Michelena, Marina; Pérez, Lucas; Aroca, Claudio

    2010-01-01

    In this paper, we give an overview of the research on fluxgate magnetometers carried out in Spain. In particular we focus in the development of the planar-type instruments. We summarize the fabrication processes and signal processing developments as well as their use in complex systems and space. PMID:22294904

  20. Observations of interplanetary dust by the Juno magnetometer investigation

    DEFF Research Database (Denmark)

    Benn, Mathias; Jørgensen, John Leif; Denver, Troelz

    2017-01-01

    One of the Juno magnetometer investigation's star cameras was configured to search for unidentified objects during Juno's transit en route to Jupiter. This camera detects and registers luminous objects to magnitude 8. Objects persisting in more than five consecutive images and moving with an appa...... on the distribution and motion of interplanetary (>μm sized) dust....

  1. Ionospheric travelling convection vortices observed by the Greenland magnetometer chain

    DEFF Research Database (Denmark)

    Kotsiaros, Stavros; Stolle, Claudia; Friis-Christensen, Eigil

    2013-01-01

    The Greenland magnetometer array continuously provides geomagnetic variometer data since the early eighties. With the polar cusp passing over it almost every day, the array is suitable to detect ionospheric traveling convection vortices (TCVs), which were rst detected by Friis-Christensen et al...

  2. Small fluxgate magnetometers: development and future trends in Spain.

    Science.gov (United States)

    Ciudad, David; Díaz-Michelena, Marina; Pérez, Lucas; Aroca, Claudio

    2010-01-01

    In this paper, we give an overview of the research on fluxgate magnetometers carried out in Spain. In particular we focus in the development of the planar-type instruments. We summarize the fabrication processes and signal processing developments as well as their use in complex systems and space.

  3. Small Fluxgate Magnetometers: Development and Future Trends in Spain

    OpenAIRE

    Lucas Pérez; Claudio Aroca; Marina Díaz-Michelena; David Ciudad

    2010-01-01

    In this paper, we give an overview of the research on fluxgate magnetometers carried out in Spain. In particular we focus in the development of the planar-type instruments. We summarize the fabrication processes and signal processing developments as well as their use in complex systems and space.

  4. Small Fluxgate Magnetometers: Development and Future Trends in Spain

    Directory of Open Access Journals (Sweden)

    Lucas Pérez

    2010-03-01

    Full Text Available In this paper, we give an overview of the research on fluxgate magnetometers carried out in Spain. In particular we focus in the development of the planar-type instruments. We summarize the fabrication processes and signal processing developments as well as their use in complex systems and space.

  5. Latch-up in CMOS integrated circuits

    International Nuclear Information System (INIS)

    Estreich, D.B.; Dutton, R.W.

    1978-04-01

    An analysis is presented of latch-up in CMOS integrated circuits. A latch-up prediction algorithm has been developed and used to evaluate methods to control latch-up. Experimental verification of the algorithm is demonstrated

  6. Nanometer CMOS ICs from basics to ASICs

    CERN Document Server

    J M Veendrick, Harry

    2017-01-01

    This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

  7. A theoretical and experimental investigation of the proton magnetometer

    International Nuclear Information System (INIS)

    Hancke, G.P.

    1987-01-01

    This study comprises the investigation of the properties of the proton magnetometer based on the free precession of protons. The basic principle of the free precession of protons in the earth's magnetic field is described and the most important factors affecting this free precession are examined. It is shown that very important parameters to keep in mind are the polarization time and the magnitude of the polarization field. A discussion of the errors of a proton magnetometer built on the periodometer principles is given and it is shown that the error in counting of the number of precession periods during the time of measurement contributes most to the total error. The magnitude of this error depends on the signal-to-noise ratio, the instability of the operating threshold of the discriminator of the period counter, it's operating time and the tuning accuracy of the sensor to the precession frequency. The penetration to a magnetometer input of variable magnetic and electric interferences, their influence on the phase of the useful signal, and the resulting measurement errors are examined and methods of reducing the effects of interferences are discussed. The optimization of sensor design is very important in the development of proton magnetometers. The coil geometry, physical size, the working substance and the polarization design are important parameters. The selection of a method for processing the precession signal of a proton magnetometer is examined, given a sensor and signal amplifier with fixed parameters. A method is proposed and compared with known methods. Measurement errors are computed for various signal-to-noise ratios and times of observation of the precession signal, and it is shown that the proposed method is superior to conventional methods found in commercial instruments

  8. Variationen und ihre Kompensation in CMOS Digitalschaltungen

    OpenAIRE

    Baumann, Thomas

    2010-01-01

    Variationen bei der Herstellung und während des Betriebs von CMOS Schaltungen beeinflussen deren Geschwindigkeit und erschweren die Verifikation der in der Spezifikation zugesicherten Eigenschaften. In dieser Arbeit wird eine abstraktionsebenenübergreifende Vorgehensweise zur Abschätzung des Einflusses von Prozess- und betriebsbedingten Umgebungsvariationen auf die Geschwindigkeit einer Schaltung vorgestellt. Neben Untersuchungen der Laufzeitsensitivität in low-power CMOS Technologien von...

  9. Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1991-11-01

    A CMOS process that is compatible with silicon p-i-n radiation detectors has been developed and characterized. A total of twelve mask layers are used in the process. The NMOS device is formed in a retrograde well while the PMOS device is fabricated directly in the high-resistivity silicon. Isolation characteristics are similar to a standard foundary CMOS process. Circuit performance using 3 μm design rules has been evaluated. The measured propagation delay and power-delay product for a 51-stage ring oscillator was 1.5 ns and 43 fJ, respectively. Measurements on a simple cascode amplifier results in a gain-bandwidth product of 200 MHz at a bias current of 15 μA. The input-referred noise of the cascode amplifier is 20 nV/√Hz at 1 MHz

  10. Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

    International Nuclear Information System (INIS)

    Iwaki, T; Covington, J A; Udrea, F; Ali, S Z; Guha, P K; Gardner, J W

    2005-01-01

    This paper describes the design of doped single crystal silicon (SCS) microhotplates for gas sensors. Resistive heaters are formed by an n+/p+ implantation into a Silicon-On-Insulator (SOI) wafer with a post-CMOS deep reactive ion etch to remove the silicon substrate. Hence they are fully compatible with CMOS technologies and allows for the integration of associated drive/detection circuitry. 2D electro-thermal models have been constructed and the results of numerical simulations using FEMLAB[reg] are given. Simulations show these micro-hotplates can operate at temperatures of 500 deg. C with a drive voltage of only 5 V and a power consumption of less than 100 mW

  11. A 75 ps rms time resolution BiCMOS time to digital converter optimized for high rate imaging detectors

    CERN Document Server

    Hervé, C

    2002-01-01

    This paper presents an integrated time to digital converter (TDC) with a bin size adjustable in the range of 125 to 175 ps and a differential nonlinearity of +-0.3%. The TDC has four channels. Its architecture has been optimized for the readout of imaging detectors in use at Synchrotron Radiation facilities. In particular, a built-in logic flags piled-up events. Multi-hit patterns are also supported for other applications. Time measurements are extracted off chip at the maximum throughput of 40 MHz. The dynamic range is 14 bits. It has been fabricated in 0.8 mu m BiCMOS technology. Time critical inputs are PECL compatible whereas other signals are CMOS compatible. A second application specific integrated circuit (ASIC) has been developed which translates NIM electrical levels to PECL ones. Both circuits are used to assemble board level TDCs complying with industry standards like VME, NIM and PCI.

  12. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-11-15

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

  13. Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

    Science.gov (United States)

    Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

    2014-03-01

    We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

  14. Design of a Low-Cost 2-Axes Fluxgate Magnetometer for Small Satellite Applications

    Directory of Open Access Journals (Sweden)

    Su-Jeoung Kim

    2005-03-01

    Full Text Available This paper addresses the design and analysis results of a 2-axes magnetometer for attitude determination of small satellite. A low-cost and efficient 2-axes fluxgate magnetometer was selected as the most suitable attitude sensor for LEO microsatellites which require a low-to-medium level pointing accuracy. An optimization trade-off study has been performed for the development of 2-axes fluxgate magnetometer. All the relevant parameters such as permeability, demagnetization factor, coil diameter, core thickness, and number of coil turns were considered for the sizing of a small satellite magnetometer. The magnetometer which is designed, manufactured, and tested in-house as described in this paper satisfies linearity requirement for determining attitude position of small satellites. On the basis of magnetometer which is designed in Space System Research Lab. (SSRL, commercial magnetometer will be developed.

  15. DUPIC fuel compatibility assessment

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hang Bok; Rho, G. H.; Park, J. W. [and others

    2000-03-01

    The purpose of this study is to assess the compatibility of DUPIC(Direct Use of Spent PWR Fuel in CANDU Reactors) fuel with the current CANDU 6 reactor, which is one of the technology being developed to utilize the spent PWR fuel in CANDU reactors. The phase 1 study of this project includes the feasibility analysis on applicability of the current core design method, the feasibility analysis on operation of the DUPIC fuel core, the compatibility analysis on individual reactor system, the sensitivity analysis on the fuel composition, and the economic analysis on DUPIC fuel cycle. The results of the validation calculations have confirmed that the current core analysis system is acceptable for the feasibility study of the DUPIC fuel compatibility analysis. The results of core simulations have shown that both natural uranium and DUPIC fuel cores are almost the same from the viewpoint of the operational performance. For individual reactor system including reactively devices, the functional requirements of each system are satisfied in general. However, because of the pronounced power flattening in the DUPIC core, the radiation damage on the critical components increases, which should be investigated more in the future. The DUPIC fuel composition heterogeneity dose not to impose any serious effect on the reactor operation if the fuel composition is adjusted. The economics analysis has been performed through conceptual design studies on the DUPIC fuel fabrication, fuel handling in a plant, and spent fuel disposal, which has shown that the DUPIC fuel cycle is comparable to the once-trough fuel cycle considering uncertainties associated with unit costs of the fuel cycle components. The results of Phase 1 study have shown that it is feasible to use the DUPIC fuel in CANDU reactors without major changes in hardware. However further studies are required to confirm the safety of the reactor under accident condition.

  16. DUPIC fuel compatibility assessment

    International Nuclear Information System (INIS)

    Choi, Hang Bok; Rho, G. H.; Park, J. W. and others

    2000-03-01

    The purpose of this study is to assess the compatibility of DUPIC(Direct Use of Spent PWR Fuel in CANDU Reactors) fuel with the current CANDU 6 reactor, which is one of the technology being developed to utilize the spent PWR fuel in CANDU reactors. The phase 1 study of this project includes the feasibility analysis on applicability of the current core design method, the feasibility analysis on operation of the DUPIC fuel core, the compatibility analysis on individual reactor system, the sensitivity analysis on the fuel composition, and the economic analysis on DUPIC fuel cycle. The results of the validation calculations have confirmed that the current core analysis system is acceptable for the feasibility study of the DUPIC fuel compatibility analysis. The results of core simulations have shown that both natural uranium and DUPIC fuel cores are almost the same from the viewpoint of the operational performance. For individual reactor system including reactively devices, the functional requirements of each system are satisfied in general. However, because of the pronounced power flattening in the DUPIC core, the radiation damage on the critical components increases, which should be investigated more in the future. The DUPIC fuel composition heterogeneity dose not to impose any serious effect on the reactor operation if the fuel composition is adjusted. The economics analysis has been performed through conceptual design studies on the DUPIC fuel fabrication, fuel handling in a plant, and spent fuel disposal, which has shown that the DUPIC fuel cycle is comparable to the once-trough fuel cycle considering uncertainties associated with unit costs of the fuel cycle components. The results of Phase 1 study have shown that it is feasible to use the DUPIC fuel in CANDU reactors without major changes in hardware. However further studies are required to confirm the safety of the reactor under accident condition

  17. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-11-15

    The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

  18. Results from the GSFC fluxgate magnetometer on Pioneer 11

    Science.gov (United States)

    Acuna, M. H.; Ness, N. F.

    1976-01-01

    A high-field triaxial fluxgate magnetometer was mounted on Pioneer 11 to measure the main magnetic field of Jupiter. It is found that this planetary magnetic field is more complex than that indicated by the results of the Pioneer 10 vector helium magnetometer. At distances less than 3 Jupiter radii, the magnetic field is observed to increase more rapidly than an inverse-cubed distance law associated with any simple dipole model. Contributions from higher-order multipoles are significant, with the quadrupole and octupole being 24 and 21 percent of the dipole moment, respectively. Implications of the results for the study of trapped particles, planetary radio emission, and planetary interiors are discussed. Major conclusions are that the deviation of the main planetary magnetic field from a simple dipole leads to distortion of the L shells of the charged particles and to warping of the magnetic equator. Enhanced absorption effects associated with Amalthea and Io are predicted.

  19. Fluxgate Magnetometer Array for Geomagnetic Abnormal Phenomena Tracking

    Directory of Open Access Journals (Sweden)

    Xiaomei Wang

    2011-06-01

    Full Text Available The objective of this project is to develop a flexible observation mode for a geomagnetic abnormal phenomena tracking system. The instrument, based on ring core fluxgate magnetometer technology, improves the field environment performance. Using wireless technology provides on-the-spot mobile networking for the observational data, with efficient access to the earthquake precursor observation network. It provides a powerful detection method for earthquake short-term prediction through installation of a low-noise fluxgate magnetometer array, intensely observing the phenomenon of geomagnetic disturbances and abnormal low-frequency electromagnetic signals in different latitudes, then carrying out observational data processing and exploring the relationship between earthquake activity and geomagnetic field changes.

  20. Machine Learning Based Localization and Classification with Atomic Magnetometers

    Science.gov (United States)

    Deans, Cameron; Griffin, Lewis D.; Marmugi, Luca; Renzoni, Ferruccio

    2018-01-01

    We demonstrate identification of position, material, orientation, and shape of objects imaged by a Rb 85 atomic magnetometer performing electromagnetic induction imaging supported by machine learning. Machine learning maximizes the information extracted from the images created by the magnetometer, demonstrating the use of hidden data. Localization 2.6 times better than the spatial resolution of the imaging system and successful classification up to 97% are obtained. This circumvents the need of solving the inverse problem and demonstrates the extension of machine learning to diffusive systems, such as low-frequency electrodynamics in media. Automated collection of task-relevant information from quantum-based electromagnetic imaging will have a relevant impact from biomedicine to security.

  1. General theory of detection of signal induced in vibrating magnetometer

    International Nuclear Information System (INIS)

    Pacyna, A.W.

    1980-01-01

    Assuming the point dipole approximation only and making use of the vectorial notation, signal (EMF) induced in a single-turn pick-up coil of the vibrating magnetometer are calculated for the case of any orientation of the coil, of vibration axis and of the magnetic moment of the sample. On the basis of formula obtained, three types of measurement geometries have been distinquished and for these the qualitative analysis is made. (author)

  2. Athermal fiber laser for the SWARM absolute scalar magnetometer

    Science.gov (United States)

    Fourcault, W.; Léger, J.-M.; Costes, V.; Fratter, I.; Mondin, L.

    2017-11-01

    The Absolute Scalar Magnetometer (ASM) developed by CEA-LETI/CNES is an optically pumped 4He magnetic field sensor based on the Zeeman effect and an electronic magnetic resonance whose effects are amplified by a laser pumping process [1-2]. Consequently, the role of the laser is to pump the 4He atoms at the D0 transition as well as to allow the magnetic resonance signal detection. The ASM will be the scalar magnetic reference instrument of the three ESA Swarm satellites to be launched in 2012 in order to carry out the best ever survey of the Earth magnetic field and its temporal evolution. The sensitivity and accuracy of this magnetometer based on 4He optical pumping depend directly on the characteristics of its light source, which is the key sub-system of the sensor. We describe in this paper the selected fiber laser architecture and its wavelength stabilization scheme. Its main performance in terms of spectral emission, optical power at 1083 nm and intensity noise characteristics in the frequency bands used for the operation of the magnetometer, are then presented. Environmental testing results (thermal vacuum cycling, vibrations, shocks and ageing) are also reported at the end of this paper.

  3. Swarm Optimization-Based Magnetometer Calibration for Personal Handheld Devices

    Directory of Open Access Journals (Sweden)

    Naser El-Sheimy

    2012-09-01

    Full Text Available Inertial Navigation Systems (INS consist of accelerometers, gyroscopes and a processor that generates position and orientation solutions by integrating the specific forces and rotation rates. In addition to the accelerometers and gyroscopes, magnetometers can be used to derive the user heading based on Earth’s magnetic field. Unfortunately, the measurements of the magnetic field obtained with low cost sensors are usually corrupted by several errors, including manufacturing defects and external electro-magnetic fields. Consequently, proper calibration of the magnetometer is required to achieve high accuracy heading measurements. In this paper, a Particle Swarm Optimization (PSO-based calibration algorithm is presented to estimate the values of the bias and scale factor of low cost magnetometers. The main advantage of this technique is the use of the artificial intelligence which does not need any error modeling or awareness of the nonlinearity. Furthermore, the proposed algorithm can help in the development of Pedestrian Navigation Devices (PNDs when combined with inertial sensors and GPS/Wi-Fi for indoor navigation and Location Based Services (LBS applications.

  4. In-Flight Calibration Processes for the MMS Fluxgate Magnetometers

    Science.gov (United States)

    Bromund, K. R.; Leinweber, H. K.; Plaschke, F.; Strangeway, R. J.; Magnes, W.; Fischer, D.; Nakamura, R.; Anderson, B. J.; Russell, C. T.; Baumjohann, W.; hide

    2015-01-01

    The calibration effort for the Magnetospheric Multiscale Mission (MMS) Analog Fluxgate (AFG) and DigitalFluxgate (DFG) magnetometers is a coordinated effort between three primary institutions: University of California, LosAngeles (UCLA); Space Research Institute, Graz, Austria (IWF); and Goddard Space Flight Center (GSFC). Since thesuccessful deployment of all 8 magnetometers on 17 March 2015, the effort to confirm and update the groundcalibrations has been underway during the MMS commissioning phase. The in-flight calibration processes evaluatetwelve parameters that determine the alignment, orthogonalization, offsets, and gains for all 8 magnetometers usingalgorithms originally developed by UCLA and the Technical University of Braunschweig and tailored to MMS by IWF,UCLA, and GSFC. We focus on the processes run at GSFC to determine the eight parameters associated with spin tonesand harmonics. We will also discuss the processing flow and interchange of parameters between GSFC, IWF, and UCLA.IWF determines the low range spin axis offsets using the Electron Drift Instrument (EDI). UCLA determines the absolutegains and sensor azimuth orientation using Earth field comparisons. We evaluate the performance achieved for MMS andgive examples of the quality of the resulting calibrations.

  5. New Magneto-Inductive DC Magnetometer for Space Missions

    Science.gov (United States)

    Moldwin, M.; Bronner, B.; Regoli, L.; Thoma, J.; Shen, A.; Jenkins, G.; Cutler, J.

    2017-12-01

    A new magneto-inductive DC magnetometer is being developed at the University of Michigan that provides fluxgate quality measurements in a low mass, volume, power and cost package. The magnetometer enables constellation-class missions not only due to its low-resource requirements, but also its potential for commercial integrated circuit fabrication. The magneto-inductive operating principle is based on a simple resistance-inductor (RL) circuit and involves measurement of the time it takes to charge and discharge the inductor between an upper and lower threshold by means of a Schmitt trigger oscillator. This time is proportional to the inductance that in turn is proportional to the field strength. We have modeled the operating principle in the circuit simulator SPICE and have built a proto-type using modified commercial sensors. The performance specifications include a dynamic range over the full-Earth's field, sampling rates up to 80 Hz, sensor and electronics mass of about 30 g, circuit board and sensor housing volume of magnetometer.

  6. A spinner magnetometer for large Apollo lunar samples

    Science.gov (United States)

    Uehara, M.; Gattacceca, J.; Quesnel, Y.; Lepaulard, C.; Lima, E. A.; Manfredi, M.; Rochette, P.

    2017-10-01

    We developed a spinner magnetometer to measure the natural remanent magnetization of large Apollo lunar rocks in the storage vault of the Lunar Sample Laboratory Facility (LSLF) of NASA. The magnetometer mainly consists of a commercially available three-axial fluxgate sensor and a hand-rotating sample table with an optical encoder recording the rotation angles. The distance between the sample and the sensor is adjustable according to the sample size and magnetization intensity. The sensor and the sample are placed in a two-layer mu-metal shield to measure the sample natural remanent magnetization. The magnetic signals are acquired together with the rotation angle to obtain stacking of the measured signals over multiple revolutions. The developed magnetometer has a sensitivity of 5 × 10-7 Am2 at the standard sensor-to-sample distance of 15 cm. This sensitivity is sufficient to measure the natural remanent magnetization of almost all the lunar basalt and breccia samples with mass above 10 g in the LSLF vault.

  7. A spinner magnetometer for large Apollo lunar samples.

    Science.gov (United States)

    Uehara, M; Gattacceca, J; Quesnel, Y; Lepaulard, C; Lima, E A; Manfredi, M; Rochette, P

    2017-10-01

    We developed a spinner magnetometer to measure the natural remanent magnetization of large Apollo lunar rocks in the storage vault of the Lunar Sample Laboratory Facility (LSLF) of NASA. The magnetometer mainly consists of a commercially available three-axial fluxgate sensor and a hand-rotating sample table with an optical encoder recording the rotation angles. The distance between the sample and the sensor is adjustable according to the sample size and magnetization intensity. The sensor and the sample are placed in a two-layer mu-metal shield to measure the sample natural remanent magnetization. The magnetic signals are acquired together with the rotation angle to obtain stacking of the measured signals over multiple revolutions. The developed magnetometer has a sensitivity of 5 × 10 -7 Am 2 at the standard sensor-to-sample distance of 15 cm. This sensitivity is sufficient to measure the natural remanent magnetization of almost all the lunar basalt and breccia samples with mass above 10 g in the LSLF vault.

  8. Particle swarm optimization algorithm based low cost magnetometer calibration

    Science.gov (United States)

    Ali, A. S.; Siddharth, S., Syed, Z., El-Sheimy, N.

    2011-12-01

    Inertial Navigation Systems (INS) consist of accelerometers, gyroscopes and a microprocessor provide inertial digital data from which position and orientation is obtained by integrating the specific forces and rotation rates. In addition to the accelerometers and gyroscopes, magnetometers can be used to derive the absolute user heading based on Earth's magnetic field. Unfortunately, the measurements of the magnetic field obtained with low cost sensors are corrupted by several errors including manufacturing defects and external electro-magnetic fields. Consequently, proper calibration of the magnetometer is required to achieve high accuracy heading measurements. In this paper, a Particle Swarm Optimization (PSO) based calibration algorithm is presented to estimate the values of the bias and scale factor of low cost magnetometer. The main advantage of this technique is the use of the artificial intelligence which does not need any error modeling or awareness of the nonlinearity. The estimated bias and scale factor errors from the proposed algorithm improve the heading accuracy and the results are also statistically significant. Also, it can help in the development of the Pedestrian Navigation Devices (PNDs) when combined with the INS and GPS/Wi-Fi especially in the indoor environments

  9. In-Flight Calibration Processes for the MMS Fluxgate Magnetometers

    Science.gov (United States)

    Bromund, K. R.; Leinweber, H. K.; Plaschke, F.; Strangeway, R. J.; Magnes, W.; Fischer, D.; Nakamura, R.; Anderson, B. J.; Russell, C. T.; Baumjohann, W.; Chutter, M.; Torbert, R. B.; Le, G.; Slavin, J. A.; Kepko, L.

    2015-12-01

    The calibration effort for the Magnetospheric Multiscale Mission (MMS) Analog Fluxgate (AFG) and Digital Fluxgate (DFG) magnetometers is a coordinated effort between three primary institutions: University of California, Los Angeles (UCLA); Space Research Institute, Graz, Austria (IWF); and Goddard Space Flight Center (GSFC). Since the successful deployment of all 8 magnetometers on 17 March 2015, the effort to confirm and update the ground calibrations has been underway during the MMS commissioning phase. The in-flight calibration processes evaluate twelve parameters that determine the alignment, orthogonalization, offsets, and gains for all 8 magnetometers using algorithms originally developed by UCLA and the Technical University of Braunschweig and tailored to MMS by IWF, UCLA, and GSFC. We focus on the processes run at GSFC to determine the eight parameters associated with spin tones and harmonics. We will also discuss the processing flow and interchange of parameters between GSFC, IWF, and UCLA. IWF determines the low range spin axis offsets using the Electron Drift Instrument (EDI). UCLA determines the absolute gains and sensor azimuth orientation using Earth field comparisons. We evaluate the performance achieved for MMS and give examples of the quality of the resulting calibrations.

  10. Through-barrier electromagnetic imaging with an atomic magnetometer.

    Science.gov (United States)

    Deans, Cameron; Marmugi, Luca; Renzoni, Ferruccio

    2017-07-24

    We demonstrate the penetration of thick metallic and ferromagnetic barriers for imaging of conductive targets underneath. Our system is based on an 85 Rb radio-frequency atomic magnetometer operating in electromagnetic induction imaging modality in an unshielded environment. Detrimental effects, including unpredictable magnetic signatures from ferromagnetic screens and variations in the magnetic background, are automatically compensated by active compensation coils controlled by servo loops. We exploit the tunability and low-frequency sensitivity of the atomic magnetometer to directly image multiple conductive targets concealed by a 2.5 mm ferromagnetic steel shield and/or a 2.0 mm aluminium shield, in a single scan. The performance of the atomic magnetometer allows imaging without any prior knowledge of the barriers or the targets, and without the need of background subtraction. A dedicated edge detection algorithm allows automatic estimation of the targets' size within 3.3 mm and of their position within 2.4 mm. Our results prove the feasibility of a compact, sensitive and automated sensing platform for imaging of concealed objects in a range of applications, from security screening to search and rescue.

  11. Detection Range of Airborne Magnetometers in Magnetic Anomaly Detection

    Directory of Open Access Journals (Sweden)

    Chengjing Li

    2015-11-01

    Full Text Available Airborne magnetometers are utilized for the small-range search, precise positioning, and identification of the ferromagnetic properties of underwater targets. As an important performance parameter of sensors, the detection range of airborne magnetometers is commonly set as a fixed value in references regardless of the influences of environment noise, target magnetic properties, and platform features in a classical model to detect airborne magnetic anomalies. As a consequence, deviation in detection ability analysis is observed. In this study, a novel detection range model is proposed on the basis of classic detection range models of airborne magnetometers. In this model, probability distribution is applied, and the magnetic properties of targets and the environment noise properties of a moving submarine are considered. The detection range model is also constructed by considering the distribution of the moving submarine during detection. A cell-averaging greatest-of-constant false alarm rate test method is also used to calculate the detection range of the model at a desired false alarm rate. The detection range model is then used to establish typical submarine search probabilistic models. Results show that the model can be used to evaluate not only the effects of ambient magnetic noise but also the moving and geomagnetic features of the target and airborne detection platform. The model can also be utilized to display the actual operating range of sensor systems.

  12. A broadband two axis flux-gate magnetometer

    Directory of Open Access Journals (Sweden)

    P. Palangio

    1998-06-01

    Full Text Available A broadband two axis flux-gate magnetometer was developed to obtain high sensitivity in magnetotelluric measurements. In magnetotelluric sounding, natural low frequency electromagnetic fields are used to estimate the conductivity of the Earth's interior. Because variations in the natural magnetic field have small amplitude(10-100 pT in the frequency range 1 Hz to 100 Hz, highly sensitive magnetic sensors are required. In magnetotelluric measurements two long and heavy solenoids, which must be installed, in the field station, perpendicular to each other (north-south and east-west and levelled in the horizontal plane are used. The coil is a critical component in magnetotelluric measurements because very slight motions create noise voltages, particularly troublesome in wooded areas; generally the installation takes place in a shallow trench. Moreover the coil records the derivative of the variations rather than the magnetic field variations, consequently the transfer function (amplitude and phase of this sensor is not constant throughout the frequency range 0.001-100 Hz. The instrument, developed at L'Aquila Geomagnetic Observatory, has a flat response in both amplitude and phase in the frequency band DC-100 Hz, in addition it has low weight, low power, small volume and it is easier to install in the field than induction magnetometers. The sensivity of this magnetometer is 10 pT rms.

  13. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

    2017-01-01

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

  14. CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

  15. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    Science.gov (United States)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  16. A Standard CMOS Humidity Sensor without Post-Processing

    OpenAIRE

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

  17. Technology CAD for germanium CMOS circuit

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

    2006-12-15

    Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

  18. Technology CAD for germanium CMOS circuit

    International Nuclear Information System (INIS)

    Saha, A.R.; Maiti, C.K.

    2006-01-01

    Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

  19. Ion traps fabricated in a CMOS foundry

    Energy Technology Data Exchange (ETDEWEB)

    Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2014-07-28

    We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

  20. CMOS integrated switching power converters

    CERN Document Server

    Villar-Pique, Gerard

    2011-01-01

    This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and effi

  1. CMOS circuit design, layout and simulation

    CERN Document Server

    Baker, R Jacob

    2010-01-01

    The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

  2. CMOS Compressed Imaging by Random Convolution

    OpenAIRE

    Jacques, Laurent; Vandergheynst, Pierre; Bibet, Alexandre; Majidzadeh, Vahid; Schmid, Alexandre; Leblebici, Yusuf

    2009-01-01

    We present a CMOS imager with built-in capability to perform Compressed Sensing. The adopted sensing strategy is the random Convolution due to J. Romberg. It is achieved by a shift register set in a pseudo-random configuration. It acts as a convolutive filter on the imager focal plane, the current issued from each CMOS pixel undergoing a pseudo-random redirection controlled by each component of the filter sequence. A pseudo-random triggering of the ADC reading is finally applied to comp...

  3. Integrated 60GHz RF beamforming in CMOS

    CERN Document Server

    Yu, Yikun; van Roermund, Arthur H M

    2011-01-01

    ""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

  4. Challenges & Roadmap for Beyond CMOS Computing Simulation.

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, Arun F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Frank, Michael P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    Simulating HPC systems is a difficult task and the emergence of “Beyond CMOS” architectures and execution models will increase that difficulty. This document presents a “tutorial” on some of the simulation challenges faced by conventional and non-conventional architectures (Section 1) and goals and requirements for simulating Beyond CMOS systems (Section 2). These provide background for proposed short- and long-term roadmaps for simulation efforts at Sandia (Sections 3 and 4). Additionally, a brief explanation of a proof-of-concept integration of a Beyond CMOS architectural simulator is presented (Section 2.3).

  5. Radiation-hardened bulk CMOS technology

    International Nuclear Information System (INIS)

    Dawes, W.R. Jr.; Habing, D.H.

    1979-01-01

    The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

  6. Fertilization compatibility of spawning corals

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set includes experimental results of fertilization assays to characterize genetic compatibility between individual parental genotypes. Targeted species...

  7. Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

    KAUST Repository

    Ghoneim, Mohamed T.

    2016-05-18

    We present a comprehensive electrical performance assessment of hafnium silicate (HfSiOₓ) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied along and across the transistor channel lengths through a bending range of 0.5-5 cm radii for n-type and p-type FinFETs. Electrical measurements were carried out before and after bending, and all the bending measurements were taken in the actual flexed (bent) state to avoid relaxation and stress recovery. Global stress from substrate bending affects the devices in different ways compared with the well-studied uniaxial/biaxial localized strain. The global stress is dependent on the type of channel charge carriers, the orientation of the bending axis, and the physical gate length of the device. We, therefore, outline useful insights on the design strategies of flexible FinFETs in future free-form electronic applications.

  8. A 0.18 μm CMOS fluorescent detector system for bio-sensing application

    Science.gov (United States)

    Nan, Liu; Guoping, Chen; Zhiliang, Hong

    2009-01-01

    A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm2 and consumes 37 mW.

  9. A 0.18 μm CMOS fluorescent detector system for bio-sensing application

    International Nuclear Information System (INIS)

    Liu Nan; Chen Guoping; Hong Zhiliang

    2009-01-01

    A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a 'contact imaging' detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm 2 and consumes 37 mW.

  10. A CMOS Luminescence Intensity and Lifetime Dual Sensor Based on Multicycle Charge Modulation.

    Science.gov (United States)

    Fu, Guoqing; Sonkusale, Sameer R

    2018-06-01

    Luminescence plays an important role in many scientific and industrial applications. This paper proposes a novel complementary metal-oxide-semiconductor (CMOS) sensor chip that can realize both luminescence intensity and lifetime sensing. To enable high sensitivity, we propose parasitic insensitive multicycle charge modulation scheme for low-light lifetime extraction benefiting from simplicity, accuracy, and compatibility with deeply scaled CMOS process. The designed in-pixel capacitive transimpedance amplifier (CTIA) based structure is able to capture the weak luminescence-induced voltage signal by accumulating photon-generated charges in 25 discrete gated 10-ms time windows and 10-μs pulsewidth. A pinned photodiode on chip with 1.04 pA dark current is utilized for luminescence detection. The proposed CTIA-based circuitry can achieve 2.1-mV/(nW/cm 2 ) responsivity and 4.38-nW/cm 2 resolution at 630 nm wavelength for intensity measurement and 45-ns resolution for lifetime measurement. The sensor chip is employed for measuring time constants and luminescence lifetimes of an InGaN-based white light-emitting diode at different wavelengths. In addition, we demonstrate accurate measurement of the lifetime of an oxygen sensitive chromophore with sensitivity to oxygen concentration of 7.5%/ppm and 6%/ppm in both intensity and lifetime domain. This CMOS-enabled oxygen sensor was then employed to test water quality from different sources (tap water, lakes, and rivers).

  11. Materials and processing approaches for foundry-compatible transient electronics

    Science.gov (United States)

    Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

    2017-07-01

    Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

  12. CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

    International Nuclear Information System (INIS)

    Kropelnicki, P; Mu, X J; Randles, A B; Cai, H; Ang, W C; Tsai, J M; Muckensturm, K-M; Vogt, H

    2013-01-01

    This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm thick device layer. The sensor chip was mounted on a pressure test package and pressure was applied to the backside of the membrane, with a range of 20–100 psi. The temperature coefficient of frequency (TCF) was experimentally measured in the temperature range of −50 °C to 300 °C. By using the modified Butterworth–van Dyke model, coupling coefficients and quality factor were extracted. Temperature-dependent Young's modulus of composite structure was determined using resonance frequency and sensor interdigital transducer (IDT) wavelength which is mainly dominated by an AlN layer. Absolute sensor phase noise was measured at resonance to estimate the sensor pressure and temperature sensitivity. This paper demonstrates an AlN-based pressure sensor which can operate in harsh environment such as oil and gas exploration, automobile and aeronautic applications. (paper)

  13. CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is...

  14. CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Turkulets, Yury [Micron Semiconductor Israel Ltd., Qiryat Gat 82109 (Israel); Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 8410501 (Israel); Silber, Amir; Ripp, Alexander; Sokolovsky, Mark [Micron Semiconductor Israel Ltd., Qiryat Gat 82109 (Israel); Shalish, Ilan, E-mail: shalish@bgu.ac.il [Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 8410501 (Israel)

    2016-03-28

    Polysilicon receives attention nowadays as a means to incorporate 3D-structured photonic devices into silicon processes. However, doping of buried layers of a typical 3D structure has been a challenge. We present a method for doping of buried polysilicon layers by solid phase diffusion. Using an underlying silicon oxide layer as a dopant source facilitates diffusion of dopants into the bottom side of the polysilicon layer. The polysilicon is grown on top of the oxide layer, after the latter has been doped by ion implantation. Post-growth heat treatment drives in the dopant from the oxide into the polysilicon. To model the process, we studied the diffusion of the two most common silicon dopants, boron (B) and phosphorus (P), using secondary ion mass spectroscopy profiles. Our results show that shallow concentration profiles can be achieved in a buried polysilicon layer using the proposed technique. We present a quantitative 3D model for the diffusion of B and P in polysilicon, which turns the proposed method into an engineerable technique.

  15. Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer

    KAUST Repository

    Ng, Tien Khee

    2012-02-10

    A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ?1.2 ?m, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ?11.5 dB in the wavelength range of 1.2-1.6 ?m. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates. © 1989-2012 IEEE.

  16. Wavelength conversion of QAM signals in a low loss CMOS compatible spiral waveguide

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Porto da Silva, Edson; Zibar, Darko

    2017-01-01

    We demonstrate wavelength conversion of quadrature amplitude modulation (QAM) signals, including 32-GBd quadrature phase-shift keying and 10-GBd 16-QAM, in a 50-cm long high index doped glass spiral waveguide. The quality of the generated idlers for up to 20 nm of wavelength shift is sufficient...... to achieve a BER performance below the hard decision forward error correction threshold BER performance (...

  17. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-12-01

    Today\\'s mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  18. Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer

    KAUST Repository

    Ng, Tien Khee; Khan, Mohammed Zahed Mustafa; Al-Jabr, Ahmad Ali; Ooi, Boon S.

    2012-01-01

    for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM

  19. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Kutbee, Arwa T.; Hanna, Amir; Hussain, Muhammad Mustafa

    2014-01-01

    Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  20. Towards CMOS-compatible nanophotonics: Ultra-compact modulators using alternative plasmonic materials

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.

    2013-01-01

    We propose several planar layouts of ultra-compact plasmonic modulators that utilize alternative plasmonic materials such as transparent conducting oxides and titanium nitride. The modulation is achieved by tuning the carrier concentration in a transparent conducting oxide layer into and out of t...

  1. Low noise monolithic CMOS front end electronics

    International Nuclear Information System (INIS)

    Lutz, G.; Bergmann, H.; Holl, P.; Manfredi, P.F.

    1987-01-01

    Design considerations for low noise charge measurement and their application in CMOS electronics are described. The amplifier driver combination whose noise performance has been measured in detail as well as the analog multiplexing silicon strip detector readout electronics are designed with low power consumption and can be operated in pulsed mode so as to reduce heat dissipation even further in many applications. (orig.)

  2. CMOS VHF transconductance-C lowpass filter

    NARCIS (Netherlands)

    Nauta, Bram

    1990-01-01

    Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response

  3. CMOS switched current phase-locked loop

    NARCIS (Netherlands)

    Leenaerts, D.M.W.; Persoon, G.G.; Putter, B.M.

    1997-01-01

    The authors present an integrated circuit realisation of a switched current phase-locked loop (PLL) in standard 2.4 µm CMOS technology. The centre frequency is tunable to 1 MHz at a clock frequency of 5.46 MHz. The PLL has a measured maximum phase error of 21 degrees. The chip consumes

  4. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

  5. CMOS digital integrated circuits a first course

    CERN Document Server

    Hawkins, Charles; Zarkesh-Ha, Payman

    2016-01-01

    This book teaches the fundamentals of modern CMOS technology and covers equal treatment to both types of MOSFET transistors that make up computer circuits; power properties of logic circuits; physical and electrical properties of metals; introduction of timing circuit electronics and introduction of layout; real-world examples and problem sets.

  6. A 24GHz Radar Receiver in CMOS

    NARCIS (Netherlands)

    Kwok, K.C.

    2015-01-01

    This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

  7. Toward CMOS image sensor based glucose monitoring.

    Science.gov (United States)

    Devadhasan, Jasmine Pramila; Kim, Sanghyo

    2012-09-07

    Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

  8. Miniature scientific-grade induction magnetometer for cubesats

    Science.gov (United States)

    Pronenko, Vira

    2017-04-01

    One of the main areas of space research is the study and forecasting of space weather. The society is more and more depending nowadays on satellite technology and communications, so it is vital to understand the physical process in the solar-terrestrial system which may disturb them. Besides the solar radiation and Space Weather effects, the Earth's ionosphere is also modified by the ever increasing industrial activity. There have been also multiple reports relating VLF and ELF wave activity to atmospheric storms and geological processes, such as earthquakes and volcanic activity. For advancing in these fields, the AC magnetic field permanent monitoring is crucial. Using the cubesat technology would allow increasing the number of measuring points dramatically. It is necessary to mention that the cubesats use for scientific research requires the miniaturization of scientific sensors what is a serious problem because the reduction of their dimensions leads, as a rule, to the parameters degradation, especially of sensitivity threshold. Today, there is no basic model of a sensitive miniature induction magnetometer. Even the smallest one of the known - for the Bepi-Colombo mission to Mercury - is too big for cubesats. The goal of the present report is to introduce the new design of miniature three-component sensor for measurement of alternative vector magnetic fields - induction magnetometer (IM). The study directions were concentrated on the ways and possibilities to create the miniature magnetometer with best combination of parameters. For this a set of scientific and technological problems, mostly aimed at the sensor construction improvement, was solved. The most important parameter characterizing magnetometer quality is its own magnetic noise level (NL). The analysis of the NL influencing factors is made and the ways to decrease it are discussed in the report. Finally, the LEMI-151 IM was developed for the SEAM cubesat mission with optimal performances within the

  9. Multilayer Based Technology to Build RTD Fluxgate Magnetometer

    Directory of Open Access Journals (Sweden)

    B. ANDO

    2006-03-01

    Full Text Available In this paper we discuss the main features of the Residence Times Difference Fluxgate Magnetometer. A low-cost technology, negligible onboard power requirements and the intrinsic digital form of the readout signal are the main advantages of the proposed strategy. Results obtained show the possibility to realise low-cost devices exploiting Printed Circuit Board (PCB technology for applications requiring resolution in the nanotesla range as the ferrous object (or particles detection, being the performance obtained suitable to detect the presence or the transit of ferrous materials via their interaction with the geomagnetic field.

  10. Three axis vector atomic magnetometer utilizing polarimetric technique

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Swarupananda, E-mail: spradhan@barc.gov.in, E-mail: pradhans75@gmail.com [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Mumbai 400085, India and Homi Bhabha National Institute, Department of Atomic Energy, Mumbai 400094 (India)

    2016-09-15

    The three axis vector magnetic field measurement based on the interaction of a single elliptically polarized light beam with an atomic system is described. The magnetic field direction dependent atomic responses are extracted by the polarimetric detection in combination with laser frequency modulation and magnetic field modulation techniques. The magnetometer geometry offers additional critical requirements like compact size and large dynamic range for space application. Further, the three axis magnetic field is measured using only the reflected signal (one polarization component) from the polarimeter and thus can be easily expanded to make spatial array of detectors and/or high sensitivity field gradient measurement as required for biomedical application.

  11. The simple procedure for the fluxgate magnetometers calibration

    Science.gov (United States)

    Marusenkov, Andriy

    2014-05-01

    The fluxgate magnetometers are widely used in geophysics investigations including the geomagnetic field monitoring at the global network of geomagnetic observatories as well as for electromagnetic sounding of the Earth's crust conductivity. For solving these tasks the magnetometers have to be calibrated with an appropriate level of accuracy. As a particular case, the ways to satisfy the recent requirements to the scaling and orientation errors of 1-second INTERNAGNET magnetometers are considered in the work. The goal of the present study was to choose a simple and reliable calibration method for estimation of scale factors and angular errors of the three-axis magnetometers in the field. There are a large number of the scalar calibration methods, which use a free rotation of the sensor in the calibration field followed by complicated data processing procedures for numerical solution of the high-order equations set. The chosen approach also exploits the Earth's magnetic field as a calibrating signal, but, in contrast to other methods, the sensor has to be oriented in some particular positions in respect to the total field vector, instead of the sensor free rotation. This allows to use very simple and straightforward linear computation formulas and, as a result, to achieve more reliable estimations of the calibrated parameters. The estimation of the scale factors is performed by the sequential aligning of each component of the sensor in two positions: parallel and anti-parallel to the Earth's magnetic field vector. The estimation of non-orthogonality angles between each pair of components is performed after sequential aligning of the components at the angles +/- 45 and +/- 135 degrees of arc in respect to the total field vector. Due to such four positions approach the estimations of the non-orthogonality angles are invariant to the zero offsets and non-linearity of transfer functions of the components. The experimental justifying of the proposed method by means of the

  12. A simple vibrating sample magnetometer for macroscopic samples

    Science.gov (United States)

    Lopez-Dominguez, V.; Quesada, A.; Guzmán-Mínguez, J. C.; Moreno, L.; Lere, M.; Spottorno, J.; Giacomone, F.; Fernández, J. F.; Hernando, A.; García, M. A.

    2018-03-01

    We here present a simple model of a vibrating sample magnetometer (VSM). The system allows recording magnetization curves at room temperature with a resolution of the order of 0.01 emu and is appropriated for macroscopic samples. The setup can be mounted with different configurations depending on the requirements of the sample to be measured (mass, saturation magnetization, saturation field, etc.). We also include here examples of curves obtained with our setup and comparison curves measured with a standard commercial VSM that confirms the reliability of our device.

  13. On the control of magnetic perturbing field onboard landers: the Magnetometer Protection program for the ESA ExoMars/Humboldt MSMO magnetometer experiment

    DEFF Research Database (Denmark)

    Menvielle, M.; Primdahl, Fritz; Brauer, Peter

    to planetary research. The major difficulty in implementing a magnetometer experiment onboard a lander is to achieve at acceptable costs a good Magnetometer Protection, namely to control the perturbing magnetic field generated by the lander during operations at the planetary surfa ce, so as to achieve...... scientific payload in the frame of the ESA ExoMars mission. Experience from previous missions constitutes the background for the MSMO Magnetometer Protection strategy. DC and AC lander generated magnetic perturbations are discussed, with particular attention to those related to solar generators. Emphasis...... and very resource consuming....

  14. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    International Nuclear Information System (INIS)

    Miucci, A; Gonzalez-Sevilla, S; Ferrere, D; Iacobucci, G; Rosa, A La; Muenstermann, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Obermann, T; Wermes, N; Garcia-Sciveres, M; Backhaus, M; Capeans, M; Feigl, S; Nessi, M; Pernegger, H; Ristic, B; George, M

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

  15. Compatible quantum theory

    International Nuclear Information System (INIS)

    Friedberg, R; Hohenberg, P C

    2014-01-01

    Formulations of quantum mechanics (QM) can be characterized as realistic, operationalist, or a combination of the two. In this paper a realistic theory is defined as describing a closed system entirely by means of entities and concepts pertaining to the system. An operationalist theory, on the other hand, requires in addition entities external to the system. A realistic formulation comprises an ontology, the set of (mathematical) entities that describe the system, and assertions, the set of correct statements (predictions) the theory makes about the objects in the ontology. Classical mechanics is the prime example of a realistic physical theory. A straightforward generalization of classical mechanics to QM is hampered by the inconsistency of quantum properties with classical logic, a circumstance that was noted many years ago by Birkhoff and von Neumann. The present realistic formulation of the histories approach originally introduced by Griffiths, which we call ‘compatible quantum theory (CQT)’, consists of a ‘microscopic’ part (MIQM), which applies to a closed quantum system of any size, and a ‘macroscopic’ part (MAQM), which requires the participation of a large (ideally, an infinite) system. The first (MIQM) can be fully formulated based solely on the assumption of a Hilbert space ontology and the noncontextuality of probability values, relying in an essential way on Gleason's theorem and on an application to dynamics due in large part to Nistico. Thus, the present formulation, in contrast to earlier ones, derives the Born probability formulas and the consistency (decoherence) conditions for frameworks. The microscopic theory does not, however, possess a unique corpus of assertions, but rather a multiplicity of contextual truths (‘c-truths’), each one associated with a different framework. This circumstance leads us to consider the microscopic theory to be physically indeterminate and therefore incomplete, though logically coherent. The

  16. Technology for the compatible integration of silicon detectors with readout electronics

    International Nuclear Information System (INIS)

    Zimmer, G.

    1984-01-01

    Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

  17. UV lithography-based protein patterning on silicon: Towards the integration of bioactive surfaces and CMOS electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lenci, S., E-mail: silvia.lenci@iet.unipi.it [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Tedeschi, L. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy); Pieri, F. [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Domenici, C. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy)

    2011-08-01

    A simple and fast methodology for protein patterning on silicon substrates is presented, providing an insight into possible issues related to the interaction between biological and microelectronic technologies. The method makes use of standard photoresist lithography and is oriented towards the implementation of biosensors containing Complementary Metal-Oxide-Semiconductor (CMOS) conditioning circuitry. Silicon surfaces with photoresist patterns were prepared and hydroxylated by means of resist- and CMOS backend-compatible solutions. Subsequent aminosilane deposition and resist lift-off in organic solvents resulted into well-controlled amino-terminated geometries. The discussion is focused on resist- and CMOS-compatibility problems related to the used chemicals. Some samples underwent gold nanoparticle (Au NP) labeling and Scanning Electron Microscopy (SEM) observation, in order to investigate the quality of the silane layer. Antibodies were immobilized on other samples, which were subsequently exposed to a fluorescently labeled antigen. Fluorescence microscopy observation showed that this method provides spatially selective immobilization of protein layers onto APTES-patterned silicon samples, while preserving protein reactivity inside the desired areas and low non-specific adsorption elsewhere. Strong covalent biomolecule binding was achieved, giving stable protein layers, which allows stringent binding conditions and a good binding specificity, really useful for biosensing.

  18. Exploiting nonlinear dynamics in a coupled-core fluxgate magnetometer

    International Nuclear Information System (INIS)

    Bulsara, Adi R; In, Visarath; Kho, Andy; Longhini, Patrick; Neff, Joe; Anderson, Gregory; Obra, Christopher; Palacios, Antonio; Baglio, Salvatore; Ando, Bruno

    2008-01-01

    Unforced bistable dynamical systems having dynamics of the general form τ F x-dot (t)=-∇ x U(x) cannot oscillate (i.e. switch between their stable attractors). However, a number of such systems subject to carefully crafted coupling schemes have been shown to exhibit oscillatory behavior under carefully chosen operating conditions. This behavior, in turn, affords a new mechanism for the detection and quantification of target signals having magnitude far smaller than the energy barrier height in the potential energy function U(x) for a single (uncoupled) element. The coupling-induced oscillations are a feature that appears to be universal in systems described by bi- or multi-stable potential energy functions U(x), and are being exploited in a new class of dynamical sensors being developed by us. In this work we describe one of these devices, a coupled-core fluxgate magnetometer (CCFM), whose operation is underpinned by this dynamic behavior. We provide an overview of the underlying dynamics and, also, quantify the performance of our test device; in particular, we provide a quantitative performance comparison to a conventional (single-core) fluxgate magnetometer via a 'resolution' parameter that embodies the device sensitivity (the slope of its input–output transfer characteristic) as well as the noise floor

  19. A radiation hardened digital fluxgate magnetometer for space applications

    Science.gov (United States)

    Miles, D. M.; Bennest, J. R.; Mann, I. R.; Millling, D. K.

    2013-09-01

    Space-based measurements of Earth's magnetic field are required to understand the plasma processes responsible for energising particles in the Van Allen radiation belts and influencing space weather. This paper describes a prototype fluxgate magnetometer instrument developed for the proposed Canadian Space Agency's (CSA) Outer Radiation Belt Injection, Transport, Acceleration and Loss Satellite (ORBITALS) mission and which has applications in other space and suborbital applications. The magnetometer is designed to survive and operate in the harsh environment of Earth's radiation belts and measure low-frequency magnetic waves, the magnetic signatures of current systems, and the static background magnetic field. The new instrument offers improved science data compared to its predecessors through two key design changes: direct digitisation of the sensor and digital feedback from two cascaded pulse-width modulators combined with analog temperature compensation. These provide an increase in measurement bandwidth up to 450 Hz with the potential to extend to at least 1500 Hz. The instrument can resolve 8 pT on a 65 000 nT field with a magnetic noise of less than 10 pT/√Hz at 1 Hz. This performance is comparable with other recent digital fluxgates for space applications, most of which use some form of sigma-delta (ΣΔ) modulation for feedback and omit analog temperature compensation. The prototype instrument was successfully tested and calibrated at the Natural Resources Canada Geomagnetics Laboratory.

  20. Multi-flux-transformer MRI detection with an atomic magnetometer.

    Science.gov (United States)

    Savukov, Igor; Karaulanov, Todor

    2014-12-01

    Recently, anatomical ultra-low field (ULF) MRI has been demonstrated with an atomic magnetometer (AM). A flux-transformer (FT) has been used for decoupling MRI fields and gradients to avoid their negative effects on AM performance. The field of view (FOV) was limited because of the need to compromise between the size of the FT input coil and MRI sensitivity per voxel. Multi-channel acquisition is a well-known solution to increase FOV without significantly reducing sensitivity. In this paper, we demonstrate twofold FOV increase with the use of three FT input coils. We also show that it is possible to use a single atomic magnetometer and single acquisition channel to acquire three independent MRI signals by applying a frequency-encoding gradient along the direction of the detection array span. The approach can be generalized to more channels and can be critical for imaging applications of non-cryogenic ULF MRI where FOV needs to be large, including head, hand, spine, and whole-body imaging. Copyright © 2014 Elsevier Inc. All rights reserved.

  1. Development of autonomous magnetometer rotorcraft for wide area assessment

    Energy Technology Data Exchange (ETDEWEB)

    Roelof Versteeg; Matt Anderson; Les Beard; Eric Corban; Darryl Curley; Jeff Gamey; Ross Johnson; Dwight Junkin; Mark McKay; Jared Salzmann; Mikhail Tchernychev; Suraj Unnikrishnan; Scott Vinson

    2010-04-01

    Large areas across the United States are potentially contaminated with UXO, with some ranges encompassing tens to hundreds of thousands of acres. Technologies are needed which will allow for cost effective wide area scanning with 1) near 100 % coverage and 2) near 100 % detection of subsurface ordnance or features indicative of subsurface ordnance. The current approach to wide area assessment is a multi-level one, in which medium - altitude fixed wing optical imaging is used for an initial site assessment. This assessment is followed with low altitude manned helicopter based magnetometry. Subsequent to this wide area assessment targeted surface investigations are performed using either towed geophysical sensor arrays or man portable sensors. In order to be an effective tool for small UXO detection, the sensing altitude for magnetic site investigations needs to be on the order of 1 – 3 meters. These altitude requirements mean that manned helicopter surveys will generally only be feasible in large, open and relatively flat terrains. While such surveys are effective in mapping large areas relatively fast there are substantial mobilization/demobilization, staffing and equipment costs associated with these surveys (resulting in costs of approximately $100-$150/acre). In addition, due to the low altitude there are substantial risks to pilots and equipment. Surface towed arrays provide high resolution maps but have other limitations, e.g. in their ability to navigate rough terrain effectively. There is thus a need for other systems which can be used for effective data collection. An UAV (Unmanned Aerial Vehicle) magnetometer platform is an obvious alternative. The motivation behind such a system is that it reduces risk to operators, is lower in initial and Operational and Maintenance (O&M) costs (and can thus potentially be applied to smaller sites) and has the potential of being more effective in terms of detection and possibly characterization (through the use of

  2. A refractory metal gate approach for micronic CMOS technology

    International Nuclear Information System (INIS)

    Lubowiecki, V.; Ledys, J.L.; Plossu, C.; Balland, B.

    1987-01-01

    In the future, devices scaling down, integration density and performance improvements are going to bring a number of conventional circuit design and process techniques to their fundamental limits. To avoid any severe limitations in MOS ULSI (Ultra Large Scale Integration) technologies, interconnection materials and schemes are required to emerge, in order to face the Megabits memory field. Among those, the gate approach will obviously take a keyrole, when the operating speed of ULSI chips will reach the practical upper limits imposed by parasitic resistances and capacitances which stem from the circuit interconnect wiring. Even if fairly suitable for MOS process, doped polycrystalline silicon is being gradually replaced by refractory metal silicide or polycide structures, which match better with low resistivity requirements. However, as we approach the submicronic IC's, higher conductivity materials will be paid more and more attention. Recently, works have been devoted and published on refractory metal gate technologies. Molybdenum or tungsten, deposited either by CVD or PVD methods, are currently reported even if some drawbacks in their process integration still remain. This paper is willing to present such an approach based on tungsten (more reliable than Molybdenum deposited by LPCVD (giving more conductive and more stable films than PVD). Deposition process will be first described. Then CMOS process flow will allow us to focus on specific refractory metal gate issues. Finally, electrical and physical properties will be assessed, which will demonstrate the feasibility of such a technology as well as the compatibility of the tungsten with most of the usual techniques

  3. CMOS Image Sensor with a Built-in Lane Detector

    Directory of Open Access Journals (Sweden)

    Li-Chen Fu

    2009-03-01

    Full Text Available This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC or Digital Signal Processor (DSP, the proposed imager, without extra Analog to Digital Converter (ADC circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 x 2,389.8 mm, and the package uses 40 pin Dual-In-Package (DIP. The pixel cell size is 18.45 x 21.8 mm and the core size of photodiode is 12.45 x 9.6 mm; the resulting fill factor is 29.7%.

  4. CMOS Image Sensor with a Built-in Lane Detector.

    Science.gov (United States)

    Hsiao, Pei-Yung; Cheng, Hsien-Chein; Huang, Shih-Shinh; Fu, Li-Chen

    2009-01-01

    This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%.

  5. Calibration of a fluxgate magnetometer array and its application in magnetic object localization

    International Nuclear Information System (INIS)

    Pang, Hongfeng; Luo, Shitu; Zhang, Qi; Li, Ji; Chen, Dixiang; Pan, Mengchun; Luo, Feilu

    2013-01-01

    The magnetometer array is effective for magnetic object detection and localization. Calibration is important to improve the accuracy of the magnetometer array. A magnetic sensor array built with four three-axis DM-050 fluxgate magnetometers is designed, which is connected by a cross aluminum frame. In order to improve the accuracy of the magnetometer array, a calibration process is presented. The calibration process includes magnetometer calibration, coordinate transformation and misalignment calibration. The calibration system consists of a magnetic sensor array, a GSM-19T proton magnetometer, a two-dimensional nonmagnetic rotation platform, a 12 V-dc portable power device and two portable computers. After magnetometer calibration, the RMS error has been decreased from an original value of 125.559 nT to a final value of 1.711 nT (a factor of 74). After alignment, the RMS error of misalignment has been decreased from 1322.3 to 6.0 nT (a factor of 220). Then, the calibrated array deployed on the nonmagnetic rotation platform is used for ferromagnetic object localization. Experimental results show that the estimated errors of X, Y and Z axes are −0.049 m, 0.008 m and 0.025 m, respectively. Thus, the magnetometer array is effective for magnetic object detection and localization in three dimensions. (paper)

  6. Swarm's absolute magnetometer experimental vector mode, an innovative capability for space magnetometry

    DEFF Research Database (Denmark)

    Hulot, Gauthier; Vigneron, Pierre; Leger, Jean-Michel

    2015-01-01

    , combining ASM scalar data with independent uxgate magnetometer vector data. The high level of agreement between these models demonstrates the potential of the ASM's vector mode for data quality control and as a stand alone magnetometer, and illustrates the way the evolution of key eld features can easily...

  7. Preliminary Report: DESiGN and Test Result of KSR-3 Rocket Magnetometers

    Directory of Open Access Journals (Sweden)

    Hyo-Min Kim

    2000-12-01

    Full Text Available The solar wind contributes to the formation of unique space environment called the Earth's magnetosphere by various interactions with the Earth's magnetic field. Thus the solar-terrestrial environment affects the Earth's magnetic field, which can be observed with an instrument for the magnetic field measurement, the magnetometer usually mounted on the rocket and the satellite and based on the ground observatory. The magnetometer is a useful instrument for the spacecraft attitude control as well as the Earth's magnetic field measurements for a scientific purpose. In this paper, we present the preliminary design and test results of the two onboard magnetometers of KARI's (Korea Aerospace Research Institute sounding rocket, KSR-3, which will be launched four times during the period of 2001-02. The KSR-3 magnetometers consist of the fluxgate magnetometer, MAG/AIM (Attitude Information Magnetometer for acquiring the rocket flight attitude information, and of the search-coil magnetometer, MAG/SIM (Scientific Investigation Magnetometer for the observation of the Earth's magnetic field fluctuations. With the MAG/AIM, the 3-axis attitude information can be acquired by the comparison of the resulting dc magnetic vector field with the IGRF (International Geomagnetic Reference Field. The Earth's magnetic field fluctuations ranging from 10 to 1,000 Hz can also be observed with the MAG/SIM measurement.

  8. Calibration of a fluxgate magnetometer array and its application in magnetic object localization

    Science.gov (United States)

    Pang, Hongfeng; Luo, Shitu; Zhang, Qi; Li, Ji; Chen, Dixiang; Pan, Mengchun; Luo, Feilu

    2013-07-01

    The magnetometer array is effective for magnetic object detection and localization. Calibration is important to improve the accuracy of the magnetometer array. A magnetic sensor array built with four three-axis DM-050 fluxgate magnetometers is designed, which is connected by a cross aluminum frame. In order to improve the accuracy of the magnetometer array, a calibration process is presented. The calibration process includes magnetometer calibration, coordinate transformation and misalignment calibration. The calibration system consists of a magnetic sensor array, a GSM-19T proton magnetometer, a two-dimensional nonmagnetic rotation platform, a 12 V-dc portable power device and two portable computers. After magnetometer calibration, the RMS error has been decreased from an original value of 125.559 nT to a final value of 1.711 nT (a factor of 74). After alignment, the RMS error of misalignment has been decreased from 1322.3 to 6.0 nT (a factor of 220). Then, the calibrated array deployed on the nonmagnetic rotation platform is used for ferromagnetic object localization. Experimental results show that the estimated errors of X, Y and Z axes are -0.049 m, 0.008 m and 0.025 m, respectively. Thus, the magnetometer array is effective for magnetic object detection and localization in three dimensions.

  9. Closed-cycle gas flow system for cooling a HTc dc-SQUID magnetometer

    NARCIS (Netherlands)

    Bosch, van den P.J.; Holland, H.J.; Brake, ter H.J.M.; Rogalla, H.

    1994-01-01

    A closed-cycle gas flow system for cooling a high-crit. temp. d.c.-superconducting quantum interference device (SQUID) magnetometer by means of a cryocooler has been designed, constructed and tested. The magnetometer is aimed to measure heart signals with a sensitivity of 0.1 pT/Hz1/2. The required

  10. The absolute magnetometers on board Swarm, lessons learned from more than two years in space

    DEFF Research Database (Denmark)

    Hulot, Gauthier; Leger, Jean-Michel; Vigneron, Pierre

    ESA's Swarm satellites carry 4He absolute magnetometers (ASM), designed by CEA-Léti and developed in partnership with CNES. These instruments are the first-ever space-borne magnetometers to use a common sensor to simultaneously deliver 1Hz independent absolute scalar and vector readings of the ma...

  11. Correlation between fluxgate and SQUID magnetometer data sets for geomagnetic storms

    Directory of Open Access Journals (Sweden)

    Matladi Thabang

    2014-01-01

    Full Text Available There has always been a need to monitor the near Earth's magnetic field, as this monitoring provides understanding and possible predictions of Space Weather events such as geomagnetic storms. Conventional magnetometers such as fluxgates have been used for decades for Space Weather research. The use of highly sensitive magnetometers such as Superconducting QUantum Interference Devices (SQUIDs, promise to give more insight into Space Weather. SQUIDs are relatively recent types of magnetometers that exploit the superconductive effects of flux quantization and Josephson tunneling to measure magnetic flux. SQUIDs have a very broad bandwidth compared to most conventional magnetometers and can measure magnetic flux as low as a few femtotesla. Since SQUIDs have never been used in Space Weather research, unshielded, it is necessary to investigate if they can be reliable Space Weather instruments. The validation is performed by comparing the frequency content of the SQUID and fluxgate magnetometers, as reported by Phiri.

  12. Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

    International Nuclear Information System (INIS)

    Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

    2011-01-01

    This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

  13. A General Design Methodology for Synchronous Early-Completion-Prediction Adders in Nano-CMOS DSP Architectures

    Directory of Open Access Journals (Sweden)

    Mauro Olivieri

    2013-01-01

    Full Text Available Synchronous early-completion-prediction adders (ECPAs are used for high clock rate and high-precision DSP datapaths, as they allow a dominant amount of single-cycle operations even if the worst-case carry propagation delay is longer than the clock period. Previous works have also demonstrated ECPA advantages for average leakage reduction and NBTI effects reduction in nanoscale CMOS technologies. This paper illustrates a general systematic methodology to design ECPA units, targeting nanoscale CMOS technologies, which is not available in the current literature yet. The method is fully compatible with standard VLSI macrocell design tools and standard adder structures and includes automatic definition of critical test patterns for postlayout verification. A design example is included, reporting speed and power data superior to previous works.

  14. Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

    CERN Document Server

    El-Khatib, Ziad; Mahmoud, Samy A

    2012-01-01

    This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

  15. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2001-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

  16. Recent developments with CMOS SSPM photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Stapels, Christopher J. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)], E-mail: CStapels@RMDInc.com; Barton, Paul [University of Michigan, Ann Arbor, MI (United States); Johnson, Erik B. [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Wehe, David K. [University of Michigan, Ann Arbor, MI (United States); Dokhale, Purushottam; Shah, Kanai [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Augustine, Frank L. [Augustine Engineering, Encinitas, CA (United States); Christian, James F. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)

    2009-10-21

    Experiments and simulations using various solid-state photomultiplier (SSPM) designs have been performed to evaluate pixel layouts and explore design choices. SPICE simulations of a design for position-sensing SSPMs showed charge division in the resistor network, and anticipated timing performance of the device. The simulation results predict good position information for resistances in the range of 1-5 k{omega} and 150-{omega} preamplifier input impedance. Back-thinning of CMOS devices can possibly increase the fill factor to 100%, improve spectral sensitivity, and allow for the deposition of anti-reflective coatings after fabrication. We report initial results from back illuminating a CMOS SSPM, and single Geiger-mode avalanche photodiode (GPD) pixels, thinned to 50 {mu}m.

  17. Desenvolvimento de uma matriz de portas CMOS

    OpenAIRE

    Jose Geraldo Mendes Taveira

    1991-01-01

    Resumo: É apresentado o projeto de uma matriz deportas CMOS. O capítulo 11 descreve as etapas de projeto, incluindo desde a escolha da topologia das células internas e de interface, o projeto e a simulação elétrica, até a geração do lay-out. Ocaprtulo III apresenta o projeto dos circuitos de aplicação, incluídos para permitir a validação da matriz. Os circuitos de apl icação são : Oscilador em anel e comparador de códigos. A matriz foi difundida no Primeiro Projeto Multi-Usuário CMOS Brasile...

  18. CMOS SPDT switch for WLAN applications

    International Nuclear Information System (INIS)

    Bhuiyan, M A S; Reaz, M B I; Rahman, L F; Minhad, K N

    2015-01-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal. (paper)

  19. Cmos spdt switch for wlan applications

    Science.gov (United States)

    Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

    2015-04-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

  20. Registration of Large Motion Blurred CMOS Images

    Science.gov (United States)

    2017-08-28

    raju@ee.iitm.ac.in - Institution : Indian Institute of Technology (IIT) Madras, India - Mailing Address : Room ESB 307c, Dept. of Electrical ...AFRL-AFOSR-JP-TR-2017-0066 Registration of Large Motion Blurred CMOS Images Ambasamudram Rajagopalan INDIAN INSTITUTE OF TECHNOLOGY MADRAS Final...NUMBER 5f.  WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) INDIAN INSTITUTE OF TECHNOLOGY MADRAS SARDAR PATEL ROAD Chennai, 600036

  1. The CMOS Integration of a Power Inverter

    OpenAIRE

    Mannarino, Eric Francis

    2016-01-01

    Due to their falling costs, the use of renewable energy systems is expanding around the world. These systems require the conversion of DC power into grid-synchronous AC power. Currently, the inverters that carry out this task are built using discrete transistors. TowerJazz Semiconductor Corp. has created a commercial CMOS process that allows for blocking voltages of up to 700 V, effectively removing the barrier to integrating power inverters onto a single chip. This thesis explores this proce...

  2. Advanced CMOS Radiation Effects Testing and Analysis

    Science.gov (United States)

    Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.; hide

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  3. Aging sensor for CMOS memory cells

    OpenAIRE

    Santos, Hugo Fernandes da Silva

    2016-01-01

    Dissertação de Mestrado, Engenharia e Tecnologia, Instituto Superior de Engenharia, Universidade do Algarve, 2016 As memórias Complementary Metal Oxide Semiconductor (CMOS) ocupam uma percentagem de área significativa nos circuitos integrados e, com o desenvolvimento de tecnologias de fabrico a uma escala cada vez mais reduzida, surgem problemas de performance e de fiabilidade. Efeitos como o BTI (Bias Thermal Instability), TDDB (Time Dependent Dielectric Breakdown), HCI (Hot Carrier Injec...

  4. MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

    Science.gov (United States)

    Jang, Munseon; Yun, Kwang-Seok

    2017-12-01

    In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

  5. Associating ground magnetometer observations with current or voltage generators

    DEFF Research Database (Denmark)

    Hartinger, M. D.; Xu, Z.; Clauer, C. R.

    2017-01-01

    A circuit analogy for magnetosphere-ionosphere current systems has two extremes for driversof ionospheric currents: ionospheric elec tric fields/voltages constant while current/conductivity vary—the“voltage generator”—and current constant while electric field/conductivity vary—the “current generator.......”Statistical studies of ground magnetometer observations associated with dayside Transient High LatitudeCurrent Systems (THLCS) driven by similar mechanisms find contradictory results using this paradigm:some studies associate THLCS with voltage generators, others with current generators. We argue that mostof...... these two assumptions substantially alter expectations for magnetic perturbations associatedwith either a current or a voltage generator. Our results demonstrate that before interpreting groundmagnetometer observations of THLCS in the context of current/voltage generators, the location...

  6. A three-axis SQUID-based absolute vector magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Schönau, T.; Schmelz, M.; Stolz, R.; Anders, S.; Linzen, S.; Meyer, H.-G. [Department of Quantum Detection, Leibniz Institute of Photonic Technology, Jena 07745 (Germany); Zakosarenko, V.; Meyer, M. [Supracon AG, An der Lehmgrube 11, Jena 07751 (Germany)

    2015-10-15

    We report on the development of a three-axis absolute vector magnetometer suited for mobile operation in the Earth’s magnetic field. It is based on low critical temperature dc superconducting quantum interference devices (LTS dc SQUIDs) with sub-micrometer sized cross-type Josephson junctions and exhibits a white noise level of about 10 fT/Hz{sup 1/2}. The width of superconducting strip lines is restricted to less than 6 μm in order to avoid flux trapping during cool-down in magnetically unshielded environment. The long-term stability of the flux-to-voltage transfer coefficients of the SQUID electronics is investigated in detail and a method is presented to significantly increase their reproducibility. We further demonstrate the long-term operation of the setup in a magnetic field varying by about 200 μT amplitude without the need for recalibration.

  7. Magnetometer-Augmented IMU Simulator: In-Depth Elaboration

    Directory of Open Access Journals (Sweden)

    Thomas Brunner

    2015-03-01

    Full Text Available The location of objects is a growing research topic due, for instance, to the expansion of civil drones or intelligent vehicles. This expansion was made possible through the development of microelectromechanical systems (MEMS, inexpensive and miniaturized inertial sensors. In this context, this article describes the development of a new simulator which generates sensor measurements, giving a specific input trajectory. This will allow the comparison of pose estimation algorithms. To develop this simulator, the measurement equations of every type of sensor have to be analytically determined. To achieve this objective, classical kinematic equations are used for the more common sensors, i.e., accelerometers and rate gyroscopes. As nowadays, the MEMS inertial measurement units (IMUs are generally magnetometer-augmented, an absolute world magnetic model is implemented. After the determination of the perfect measurement (through the error-free sensor models, realistic error models are developed to simulate real IMU behavior. Finally, the developed simulator is subjected to different validation tests.

  8. CMOS image sensors: State-of-the-art

    Science.gov (United States)

    Theuwissen, Albert J. P.

    2008-09-01

    This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

  9. Counting neutrons with a commercial S-CMOS camera

    Directory of Open Access Journals (Sweden)

    Patrick Van Esch

    2018-01-01

    Full Text Available It is possible to detect individual flashes from thermal neutron impacts in a ZnS scintillator using a CMOS camera looking at the scintillator screen, and off line image processing. Some preliminary results indicated that the efficiency of recognition could be improved by optimizing the light collection and the image processing. We will report on this ongoing work which is a result from the collaboration between ESS Bilbao and the ILL. The main progress to be reported is situated on the level of the on-line treatment of the imaging data. If this technology is to work on a genuine scientific instrument, it is necessary that all the processing happens on line, to avoid the accumulation of large amounts of image data to be analyzed off line. An FPGA-based real-time full-deca mode VME-compatible CameraLink board has been developed at the SCI of the ILL, which is able to manage the data flow from the camera and convert it in a reasonable “neutron impact” data flow like from a usual neutron counting detector. The main challenge of the endeavor is the optical light collection from the scintillator. While the light yield of a ZnS scintillator is a priori rather important, the amount of light collected with a photographic objective is small. Different scintillators and different light collection techniques have been experimented with and results will be shown for different setups improving upon the light recuperation on the camera sensor. Improvements on the algorithm side will also be presented. The algorithms have to be at the same time efficient in their recognition of neutron signals, in their rejection of noise signals (internal and external to the camera but also have to be simple enough to be easily implemented in the FPGA. The path from the idea of detecting individual neutron impacts with a CMOS camera to a practical working instrument detector is challenging, and in this paper we will give an overview of the part of the road that has

  10. Counting neutrons with a commercial S-CMOS camera

    Science.gov (United States)

    Patrick, Van Esch; Paolo, Mutti; Emilio, Ruiz-Martinez; Estefania, Abad Garcia; Marita, Mosconi; Jon, Ortega

    2018-01-01

    It is possible to detect individual flashes from thermal neutron impacts in a ZnS scintillator using a CMOS camera looking at the scintillator screen, and off line image processing. Some preliminary results indicated that the efficiency of recognition could be improved by optimizing the light collection and the image processing. We will report on this ongoing work which is a result from the collaboration between ESS Bilbao and the ILL. The main progress to be reported is situated on the level of the on-line treatment of the imaging data. If this technology is to work on a genuine scientific instrument, it is necessary that all the processing happens on line, to avoid the accumulation of large amounts of image data to be analyzed off line. An FPGA-based real-time full-deca mode VME-compatible CameraLink board has been developed at the SCI of the ILL, which is able to manage the data flow from the camera and convert it in a reasonable "neutron impact" data flow like from a usual neutron counting detector. The main challenge of the endeavor is the optical light collection from the scintillator. While the light yield of a ZnS scintillator is a priori rather important, the amount of light collected with a photographic objective is small. Different scintillators and different light collection techniques have been experimented with and results will be shown for different setups improving upon the light recuperation on the camera sensor. Improvements on the algorithm side will also be presented. The algorithms have to be at the same time efficient in their recognition of neutron signals, in their rejection of noise signals (internal and external to the camera) but also have to be simple enough to be easily implemented in the FPGA. The path from the idea of detecting individual neutron impacts with a CMOS camera to a practical working instrument detector is challenging, and in this paper we will give an overview of the part of the road that has already been walked.

  11. Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

    CERN Document Server

    Wang, T.

    2017-01-01

    The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

  12. Miniaturized digital fluxgate magnetometer for small spacecraft applications

    International Nuclear Information System (INIS)

    Forslund, Åke; Ivchenko, Nickolay; Olsson, Göran; Edberg, Terry; Belyayev, Serhiy; Marusenkov, Andriy

    2008-01-01

    A novel design of an Earth field digital fluxgate magnetometer is presented, the small magnetometer in low-mass experiment (SMILE). The combination of a number of new techniques results in significant miniaturization of both sensor and electronics. The design uses a sensor with volume compensation, combining three dual rod cores in a Macor® cube with the side dimension of 20 mm. Use of volume compensation provides high geometrical stability of the axes and improved performance compared to component compensated sensors. The sensor is operated at an excitation frequency of 8 kHz. Most of the instrument functionality is combined in a digital signal processing core, implemented in a field programmable gate array (FPGA). The pick-up signal is digitized after amplification and filtering, and values of compensation currents for each of the axes are determined by a digital correlation algorithm, equivalent to a matched filter, and are fed to a hybrid pulse-width modulation/delta-sigma digital-to-analogue converter driving the currents through the compensation coils. Using digital design makes the instrument very flexible, reduces power consumption and opens possibilities for the customization of the operation modes. The current implementation of the design is based on commercial off-the-shelf components. A calibration of the SMILE instrument was carried out at the Nurmijärvi Geophysical Observatory, showing high linearity (within 6 nT on the whole ±50 µT scale), good orthogonality (22 arcmin) and very good temperature stability of the axes

  13. Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

    Science.gov (United States)

    Cernansky, Robert; Martini, Francesco; Politi, Alberto

    2018-02-01

    We demonstrate on chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible PECVD Silicon Nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high quality Q-factor of 320,000 resulting in a generation rate of 950,000 $\\frac{pairs}{mW}$. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.

  14. Development of Magnetometer Digital Circuit for KSR-3 Rocket and Analytical Study on Calibration Result

    Directory of Open Access Journals (Sweden)

    Eun-Seok Lee

    2002-12-01

    Full Text Available This paper describes the re-design and the calibration results of the MAG digital circuit onboard the KSR-3. We enhanced the sampling rate of magnetometer data. Also, we reduced noise and increased authoritativeness of data. We could confirm that AIM resolution was decreased less than 1nT of analog calibration by a digital calibration of magnetometer. Therefore, we used numerical-program to correct this problem. As a result, we could calculate correction and error of data. These corrections will be applied to magnetometer data after the launch of KSR-3.

  15. Blood compatibility--a perspective.

    Science.gov (United States)

    Ratner, B D

    2000-01-01

    This perspective on blood- materials interactions is intended to introduce the set of papers stemming from the symposium, "Devices and Diagnostics in Contact with Blood: Issues in Blood Compatibility at the Close of the 20th Century," organized on August 4-6, 1999 at the University of Washington by the University of Washington Engineered Biomaterials (UWEB) Engineering Research Center. This article outlines some of the history of blood contacting materials, overviews the work that has originated at the University of Washington over the past 28 years, speculates on the origins of the controversies on blood compatibility and considers the issues that should be addressed in future studies.

  16. BioCMOS Interfaces and Co-Design

    CERN Document Server

    Carrara, Sandro

    2013-01-01

    The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

  17. Cryo-CMOS Circuits and Systems for Quantum Computing Applications

    NARCIS (Netherlands)

    Patra, B; Incandela, R.M.; van Dijk, J.P.G.; Homulle, H.A.R.; Song, Lin; Shahmohammadi, M.; Staszewski, R.B.; Vladimirescu, A.; Babaie, M.; Sebastiano, F.; Charbon, E.E.E.

    2018-01-01

    A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising

  18. First principle leakage current reduction technique for CMOS devices

    CSIR Research Space (South Africa)

    Tsague, HD

    2015-12-01

    Full Text Available This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations...

  19. From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

    DEFF Research Database (Denmark)

    Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.

    2008-01-01

    This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

  20. Variation-aware advanced CMOS devices and SRAM

    CERN Document Server

    Shin, Changhwan

    2016-01-01

    This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

  1. Simulations of depleted CMOS sensors for high-radiation environments

    CERN Document Server

    Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

    2017-01-01

    After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

  2. Broadband image sensor array based on graphene-CMOS integration

    Science.gov (United States)

    Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

    2017-06-01

    Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

  3. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  4. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2003-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0...

  5. CMOS current controlled fully balanced current conveyor

    International Nuclear Information System (INIS)

    Wang Chunhua; Zhang Qiujing; Liu Haiguang

    2009-01-01

    This paper presents a current controlled fully balanced second-generation current conveyor circuit (CF-BCCII). The proposed circuit has the traits of fully balanced architecture, and its X-Y terminals are current controllable. Based on the CFBCCII, two biquadratic universal filters are also proposed as its applications. The CFBCCII circuits and the two filters were fabricated with chartered 0.35-μm CMOS technology; with ±1.65 V power supply voltage, the total power consumption of the CFBCCII circuit is 3.6 mW. Comparisons between measured and HSpice simulation results are also given.

  6. CMOS Current-mode Operational Amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1992-01-01

    current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2......A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

  7. A CMOS current-mode operational amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1993-01-01

    current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2......A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

  8. Monolithic CMOS imaging x-ray spectrometers

    Science.gov (United States)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  9. Nano-CMOS gate dielectric engineering

    CERN Document Server

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  10. CMOS biomicrosystems where electronics meets biology

    CERN Document Server

    2011-01-01

    "The book will address the-state-of-the-art in integrated Bio-Microsystems that integrate microelectronics with fluidics, photonics, and mechanics. New exciting opportunities in emerging applications that will take system performance beyond offered by traditional CMOS based circuits are discussed in detail. The book is a must for anyone serious about microelectronics integration possibilities for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with electronics background that want to learn about integrated microsystems. The book will be also used as a recommended reading and supplementary material in graduate course curriculum"--

  11. Electromagnetic compatibility in power electronics

    CERN Document Server

    Costa , François; Revol , Bertrand

    2014-01-01

    Scientists largely attribute the recent deterioration of the electromagnetic environment to power electronics. This realization has spurred the study of methodical approaches to electromagnetic compatibility designs as explored in this text. The book addresses major challenges, such as handling numerous parameters vital to predicting electro magnetic effects and achieving compliance with line-harmonics norms, while proposing potential solutions.

  12. Socio-compatible energy policies

    International Nuclear Information System (INIS)

    Renn, O.; Albrecht, G.; Kotte, U.; Peters, H.P.; Stegelmann, H.U.

    1985-01-01

    The socio-compatibility project comprises three central analytical elements: 1) The arborescent value analysis: Eminent social groups (such as the trade-unions or the ecological institutes) were questioned on their values and criteria applied to evaluate different energy systems. 2) The energy system and scenario impact analysis: Indicators deduced from the arborescent value analysis serve to approximately cover the value dimensions affected by above criteria. 3) Impact analysis weighing executed by a group of arbitrarily chosen citizens. All reflections considered, it is evident that none of the energy policies discussed may claim the title 'socio-compatible'. The individual, i.e. neither scientist nor politician, cannot decide upon the socio-compatibility of one or the other concept. An altogether socially compatible solution accepted and classified as such by different social groups may only crystallize and be set against different options by the political formation of opinion. The studys' primary concern lies in furnishing information, i.e. aids for politicians having to decide on energy policies. Above all the study aimed at finding out about reactions, social protest, opposition or approval to be coped with by those who, having the say in political matters, want to speak up for one of the energy policies under public discussion. (orig./HSCH) [de

  13. A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

    Science.gov (United States)

    Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

    2014-01-01

    This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

  14. Rad-Hard Sigma-Delta 3-Channel ADC for Fluxgate Magnetometers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The measurement of the magnetic field vector is of fundamental importance to space physics missions. The fluxgate magnetometer is a device developed for precise...

  15. Measuring In-Flight Angular Motion With a Low-Cost Magnetometer

    National Research Council Canada - National Science Library

    Harkins, Thomas E; Wilson, Michael J

    2007-01-01

    A technique for obtaining pitch, yaw, and roll rates of a projectile from a single, low-cost, commercial off-the-shelf magnetometer has been developed at the Advanced Munitions Concepts Branch of the U.S...

  16. Rad-Hard Sigma-Delta 3-channel ADC for Fluxgate Magnetometers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project aims to develop a multi-channel analog to digital converter (ADC) required for a fluxgate magnetometer (EPD) employed on NASA's planetary...

  17. Simplified High-Performance Roll Out Composite Magnetometer Boom, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — In response to NASA's need for compact, low-cost deployable magnetometer booms for CubeSats, Roccor proposes to develop a Simple High-performance Roll-Out Composite...

  18. Basic technical parameters of magnetometers with ferromagnetic transducers and a method to define them

    International Nuclear Information System (INIS)

    Nagiello, Z.

    1980-01-01

    The basic technical parameters of magnetometers with ferromagnetic transducers and measuring methods to define these parameters have been discussed. Special attention was paid to factors which essentially affect the inaccuracy of these measuring instruments. (author)

  19. Venus Lightning: What We Have Learned from the Venus Express Fluxgate Magnetometer

    Science.gov (United States)

    Russell, C. T.; Strangeway, R. J.; Wei, H. Y.; Zhang, T. L.

    2010-03-01

    The Venus Express magnetometer sees short (tens of milliseconds) pulses of EM waves in the Venus ionosphere as predicted by the lightning model for the PVO electric pulses. These waves are stronger than similar terrestrial signals produced by lightning.

  20. Sensitivity optimization of Bell-Bloom magnetometers by manipulation of atomic spin synchronization

    Science.gov (United States)

    Ranjbaran, M.; Tehranchi, M. M.; Hamidi, S. M.; Khalkhali, S. M. H.

    2018-05-01

    Many efforts have been devoted to the developments of atomic magnetometers for achieving the high sensitivity required in biomagnetic applications. To reach the high sensitivity, many types of atomic magnetometers have been introduced for optimization of the creation and relaxation rates of atomic spin polarization. In this paper, regards to sensitivity optimization techniques in the Mx configuration, we have proposed a novelty approach for synchronization of the spin precession in the Bell-Bloom magnetometers. We have utilized the phenomenological Bloch equations to simulate the spin dynamics when modulation of pumping light and radio frequency magnetic field were both used for atomic spin synchronization. Our results showed that the synchronization process, improved the magnetometer sensitivity respect to the classical configurations.

  1. IceBridge Scintrex CS-3 Cesium Magnetometer L1B Geolocated Magnetic Anomalies, Version 1

    Data.gov (United States)

    National Aeronautics and Space Administration — The NASA IceBridge Scintrex CS-3 Cesium Magnetometer L1B Geolocated Magnetic Anomalies (IMCS31B) data set contains magnetic field readings taken over Greenland using...

  2. IceBridge Scintrex CS-3 Cesium Magnetometer L0 Raw Magnetic Field, Version 1

    Data.gov (United States)

    National Aeronautics and Space Administration — The NASA IceBridge Scintrex CS-3 Cesium Magnetometer L0 Raw Magnetic Field data set contains magnetic field readings and fluxgate values taken over Greenland using...

  3. Feasibility study on measurement of magnetocardiography (MCG) using fluxgate magnetometer

    Science.gov (United States)

    Sengottuvel, S.; Sharma, Akash; Biswal, Deepak; Khan, Pathan Fayaz; Swain, Pragyna Parimita; Patel, Rajesh; Gireesan, K.

    2018-04-01

    This paper reports the feasibility of measuring weak magnetic fields generated by the electrical activity of the heart using a portable tri-axial fluxgate magnetometer inside a magnetically shielded room. Measurement of Magnetocardiogram (MCG) signals could be successfully demonstrated from a healthy subject using a novel set-up involving a reference fluxgate sensor which simultaneously measures the magnetic fields associated with the ECG waveform measured on the same subject. The timing information provided by R wave peaks of ECG recorded by the reference sensor is utilized to generate trigger locked average of the sensor output of the measurement fluxgate, and extract MCG signals in all the three orthogonal directions (X, Y and Z) on the anterior thorax. It is expected that such portable room temperature measurements using fluxgate sensor could assist in validating the direction of the equivalent current dipole associated with the electrical activity of the human heart. This is somewhat difficult in conventional MCG measurements using SQUID sensors, which usually furnish only the z component of the magnetic field and its spatial derivatives.

  4. CLUSTER STAFF search coils magnetometer calibration - comparisons with FGM

    Science.gov (United States)

    Robert, P.; Cornilleau-Wehrlin, N.; Piberne, R.; de Conchy, Y.; Lacombe, C.; Bouzid, V.; Grison, B.; Alison, D.; Canu, P.

    2013-12-01

    The main part of Cluster Spatio Temporal Analysis of Field Fluctuations (STAFF) experiment consists of triaxial search coils allowing the measurements of the three magnetic components of the waves from 0.1 Hz up to 4 kHz. Two sets of data are produced, one by a module to filter and transmit the corresponding waveform up to either 10 or 180 Hz (STAFF-SC) and the second by an onboard Spectrum Analyser (STAFF-SA) to compute the elements of the spectral matrix for five components of the waves, 3 × B and 2 × E (from EFW experiment) in the frequency range 8 Hz to 4 kHz. In order to understand the way the output signal of the search coils are calibrated, the transfer functions of the different parts of the instrument are described as well as the way to transform telemetry data into physical units, across various coordinate systems from the spinning sensors to a fixed and known frame. The instrument sensitivity is discussed. Cross-calibration inside STAFF (SC and SA) is presented. Results of cross-calibration between the STAFF search coils and the Cluster Flux Gate Magnetometer (FGM) data are discussed. It is shown that these cross-calibrations lead to an agreement between both data sets at low frequency within a 2% error. By means of statistics done over 10 yr, it is shown that the functionalities and characteristics of both instruments have not changed during this period.

  5. CLUSTER-STAFF search coil magnetometer calibration - comparisons with FGM

    Science.gov (United States)

    Robert, P.; Cornilleau-Wehrlin, N.; Piberne, R.; de Conchy, Y.; Lacombe, C.; Bouzid, V.; Grison, B.; Alison, D.; Canu, P.

    2014-09-01

    The main part of the Cluster Spatio-Temporal Analysis of Field Fluctuations (STAFF) experiment consists of triaxial search coils allowing the measurements of the three magnetic components of the waves from 0.1 Hz up to 4 kHz. Two sets of data are produced, one by a module to filter and transmit the corresponding waveform up to either 10 or 180 Hz (STAFF-SC), and the second by the onboard Spectrum Analyser (STAFF-SA) to compute the elements of the spectral matrix for five components of the waves, 3 × B and 2 × E (from the EFW experiment), in the frequency range 8 Hz to 4 kHz. In order to understand the way the output signals of the search coils are calibrated, the transfer functions of the different parts of the instrument are described as well as the way to transform telemetry data into physical units across various coordinate systems from the spinning sensors to a fixed and known frame. The instrument sensitivity is discussed. Cross-calibration inside STAFF (SC and SA) is presented. Results of cross-calibration between the STAFF search coils and the Cluster Fluxgate Magnetometer (FGM) data are discussed. It is shown that these cross-calibrations lead to an agreement between both data sets at low frequency within a 2% error. By means of statistics done over 10 yr, it is shown that the functionalities and characteristics of both instruments have not changed during this period.

  6. A xylophone bar magnetometer for micro/pico satellites

    Science.gov (United States)

    Lamy, Hervé; Niyonzima, Innocent; Rochus, Pierre; Rochus, Véronique

    2010-10-01

    The Belgian Institute of Space Aeronomy (BIRA-IASB), "Centre Spatial de Liège" (CSL), "Laboratoire de Techniques Aéronautiques et Spatiales" (LTAS) of University of Liège, and the Microwave Laboratory of University of Louvain-La-Neuve (UCL) are collaborating in order to develop a miniature version of a xylophone bar magnetometer (XBM) using Microelectromechanical Systems (MEMS) technology. The device is based on a classical resonating xylophone bar. A sinusoidal current is supplied to the bar oscillating at the fundamental transverse resonant mode of the bar. When an external magnetic field is present, the resulting Lorentz force causes the bar to vibrate at its fundamental frequency with an amplitude directly proportional to the vertical component of the ambient magnetic field. In this paper we illustrate the working principles of the XBM and the challenges to reach the required sensitivity in space applications (measuring magnetic fields with an accuracy of approximately of 0.1 nT). The optimal dimensions of the MEMS XBM are discussed as well as the constraints on the current flowing through the bar. Analytical calculations as well as simulations with finite element methods have been used. Prototypes have been built in the Microwave Laboratory using silicon on insulator (SOI) and bulk micromachining processes. Several methods to accurately measure the displacement of the bar are proposed.

  7. Reducing systematic errors in measurements made by a SQUID magnetometer

    International Nuclear Information System (INIS)

    Kiss, L.F.; Kaptás, D.; Balogh, J.

    2014-01-01

    A simple method is described which reduces those systematic errors of a superconducting quantum interference device (SQUID) magnetometer that arise from possible radial displacements of the sample in the second-order gradiometer superconducting pickup coil. By rotating the sample rod (and hence the sample) around its axis into a position where the best fit is obtained to the output voltage of the SQUID as the sample is moved through the pickup coil, the accuracy of measuring magnetic moments can be increased significantly. In the cases of an examined Co 1.9 Fe 1.1 Si Heusler alloy, pure iron and nickel samples, the accuracy could be increased over the value given in the specification of the device. The suggested method is only meaningful if the measurement uncertainty is dominated by systematic errors – radial displacement in particular – and not by instrumental or environmental noise. - Highlights: • A simple method is described which reduces systematic errors of a SQUID. • The errors arise from a radial displacement of the sample in the gradiometer coil. • The procedure is to rotate the sample rod (with the sample) around its axis. • The best fit to the SQUID voltage has to be attained moving the sample through the coil. • The accuracy of measuring magnetic moment can be increased significantly

  8. Obtaining 'images' from iron objects using a 3-axis fluxgate magnetometer

    International Nuclear Information System (INIS)

    Chilo, Jose; Jabor, Abbas; Lizska, Ludwik; Eide, Age J.; Lindblad, Thomas

    2007-01-01

    Magnetic objects can cause local variations in the Earth's magnetic field that can be measured with a magnetometer. Here we used tri-axial magnetometer measurements and an analysis method employing wavelet techniques to determine the 'signature' or 'fingerprint' of different iron objects. Clear distinctions among the iron samples were observed. The time-dependent changes in the frequency powers were extracted by use of the Morlet wavelet corresponding to frequency bands from 0.1 to 100 Hz

  9. CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties

    Directory of Open Access Journals (Sweden)

    Pei-Zen Chang

    2012-12-01

    Full Text Available This paper develops the technologies of mechanical characterization of CMOS-MEMS devices, and presents a robust algorithm for extracting mechanical properties, such as Young’s modulus, and mean stress, through the external electrical circuit behavior of the micro test-key. An approximate analytical solution for the pull-in voltage of bridge-type test-key subjected to electrostatic load and initial stress is derived based on Euler’s beam model and the minimum energy method. Then one can use the aforesaid closed form solution of the pull-in voltage to extract the Young’s modulus and mean stress of the test structures. The test cases include the test-key fabricated by a TSMC 0.18 μm standard CMOS process, and the experimental results refer to Osterberg’s work on the pull-in voltage of single crystal silicone microbridges. The extracted material properties calculated by the present algorithm are valid. Besides, this paper also analyzes the robustness of this algorithm regarding the dimension effects of test-keys. This mechanical properties extracting method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test process is non-destructive.

  10. A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

    Science.gov (United States)

    Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

    2009-05-01

    Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

  11. High-sensitivity dc field magnetometer using nonlinear resonance magnetoelectric effect

    International Nuclear Information System (INIS)

    Burdin, D.A.; Chashin, D.V.; Ekonomov, N.A.; Fetisov, Y.K.; Stashkevich, A.A.

    2016-01-01

    The design and operation principle of dc field magnetometer using nonlinear resonance magnetoelectric effect in a ferromagnetic–piezoelectric structure are described. It is shown that under action of ac pumping magnetic field the structure generates the output voltage containing higher harmonics whose amplitudes depend on the dc magnetic field. Best performance of the device is obtained if the signal of the third harmonics is used for the dc field measurement. The sensitivity can be considerably (by approximately three orders of magnitude) increased if advantage is taken of the acoustic resonance of the structure at this frequency. There exists the optimal pumping field ensuring the highest sensitivity. Further increasing of this field expands the range of measurable dc fields at the expense of deteriorated sensitivity. The magnetometer fabricated on the basis of a planar langatate-Metglas structure had sensitivity up to ~1 V/Oe and allowed detection of the fields as low as ~10"−"5 Oe. - Highlights: • Operational principle and design of new type dc field magnetometer is described. • Magnetometer uses nonlinear magnetoelectric effect in a langatate-Metglas structure. • Magnetometer has sensitivity of ~1 V/Oe and detects fields as low as 10"−"5 Oe. • The proposed magnetometer can compete with well known fluxgate sensors.

  12. High-sensitivity dc field magnetometer using nonlinear resonance magnetoelectric effect

    Energy Technology Data Exchange (ETDEWEB)

    Burdin, D.A.; Chashin, D.V.; Ekonomov, N.A. [Moscow State University of Information Technologies, Radio Engineering and Electronics, Moscow (Russian Federation); Fetisov, Y.K., E-mail: fetisov@mirea.ru [Moscow State University of Information Technologies, Radio Engineering and Electronics, Moscow (Russian Federation); Stashkevich, A.A. [LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité, 93430 Villetaneuse (France)

    2016-05-01

    The design and operation principle of dc field magnetometer using nonlinear resonance magnetoelectric effect in a ferromagnetic–piezoelectric structure are described. It is shown that under action of ac pumping magnetic field the structure generates the output voltage containing higher harmonics whose amplitudes depend on the dc magnetic field. Best performance of the device is obtained if the signal of the third harmonics is used for the dc field measurement. The sensitivity can be considerably (by approximately three orders of magnitude) increased if advantage is taken of the acoustic resonance of the structure at this frequency. There exists the optimal pumping field ensuring the highest sensitivity. Further increasing of this field expands the range of measurable dc fields at the expense of deteriorated sensitivity. The magnetometer fabricated on the basis of a planar langatate-Metglas structure had sensitivity up to ~1 V/Oe and allowed detection of the fields as low as ~10{sup −5} Oe. - Highlights: • Operational principle and design of new type dc field magnetometer is described. • Magnetometer uses nonlinear magnetoelectric effect in a langatate-Metglas structure. • Magnetometer has sensitivity of ~1 V/Oe and detects fields as low as 10{sup −5} Oe. • The proposed magnetometer can compete with well known fluxgate sensors.

  13. The low cost Proton Precession Magnetometer developed at the Indian Institute of Geomagnetism

    International Nuclear Information System (INIS)

    Mahavarkar, P.; Singh, S.; Labde, S.; Dongre, V.; Patil, A.

    2017-01-01

    Proton magnetometers are the oldest scalar magnetometers. The first commercial units were produced in early 1960s as portable instruments. In continuation airborne instruments appeared with optimized speed of readings and sensitivity, large sensors etc. Later development of Overhauser and optically pumped magnetometers has eliminated Proton magnetometers from airborne surveys. However they remain very popular in various ground surveys and observatories. With this primary purpose of generating the ground based magnetic data, the Indian Institute of Geomagnetism (IIG) for the last 3 decades have been developing low cost Proton Precession Magnetometers (PPM). Beginning with the 1 nT PPM which has undergone several changes in design, the successor PM7 the advanced version has been successfully developed by the institute and is installed at various observatories of the institute. PM7 records the total field 'F' with accuracy of 0.1 nT and a sampling rate of 10 seconds/sample. This article briefly discusses the design and development of this IIG make PM7 and compares the data recorded by this instrument with one of the commercially available Overhauser magnetometer in the world market. The quality of data recorded by PM7 is in excellent agreement with the Overhauser. With the available quality of data generated by this instrument, PM7 is an affordable PPM for scientific institutions, schools and colleges intending to carry out geomagnetic studies. The commercial cost of PM7 is ≈ 20% of the cost of Overhauser available in market.

  14. The low cost Proton Precession Magnetometer developed at the Indian Institute of Geomagnetism

    Science.gov (United States)

    Mahavarkar, P.; Singh, S.; Labde, S.; Dongre, V.; Patil, A.

    2017-05-01

    Proton magnetometers are the oldest scalar magnetometers. The first commercial units were produced in early 1960s as portable instruments. In continuation airborne instruments appeared with optimized speed of readings and sensitivity, large sensors etc. Later development of Overhauser and optically pumped magnetometers has eliminated Proton magnetometers from airborne surveys. However they remain very popular in various ground surveys and observatories. With this primary purpose of generating the ground based magnetic data, the Indian Institute of Geomagnetism (IIG) for the last 3 decades have been developing low cost Proton Precession Magnetometers (PPM). Beginning with the 1 nT PPM which has undergone several changes in design, the successor PM7 the advanced version has been successfully developed by the institute and is installed at various observatories of the institute. PM7 records the total field `F' with accuracy of 0.1 nT and a sampling rate of 10 seconds/sample. This article briefly discusses the design and development of this IIG make PM7 and compares the data recorded by this instrument with one of the commercially available Overhauser magnetometer in the world market. The quality of data recorded by PM7 is in excellent agreement with the Overhauser. With the available quality of data generated by this instrument, PM7 is an affordable PPM for scientific institutions, schools and colleges intending to carry out geomagnetic studies. The commercial cost of PM7 is ≈ 20% of the cost of Overhauser available in market.

  15. A portable Hall magnetometer probe for characterization of magnetic iron oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, Jefferson F.D.F.; Costa, Mateus C.; Louro, Sonia R.W.; Bruno, Antonio C., E-mail: acbruno@puc-rio.br

    2017-03-15

    We have built a portable Hall magnetometer probe, for measuring magnetic properties of iron oxide nanoparticles, that can be used for bulk materials and liquid samples as well. The magnetometer probe consists of four voltage-programmable commercial Hall sensors and a thin acrylic plate for positioning the sensors. In order to operate, it needs to be attached to a pole of an electromagnet and connected to an AD converter and a computer. It acquires a complete magnetization curve in a couple of minutes and has a magnetic moment sensitivity of 3.5×10{sup −7} Am{sup 2}. We tested its performance with magnetic nanoparticles containing an iron oxide core and having coating layers with different sizes. The magnetization results obtained were compared with measurements performed on commercial stand-alone magnetometers, and exhibited errors of about ±0.2 Am{sup 2}/kg (i.e 0.4%) at saturation and below 0.5 Am{sup 2}/kg (i.e. 10%) at remanence. - Highlights: • A low-cost portable Hall magnetometer probe has been built. • The Hall magnetometer probe can be attached to any electromagnet. • The Hall probe was calibrated and successfully compared to industry standard magnetometers. • The Hall probe was able to measure iron oxide nanoparticles with different coatings.

  16. A portable Hall magnetometer probe for characterization of magnetic iron oxide nanoparticles

    International Nuclear Information System (INIS)

    Araujo, Jefferson F.D.F.; Costa, Mateus C.; Louro, Sonia R.W.; Bruno, Antonio C.

    2017-01-01

    We have built a portable Hall magnetometer probe, for measuring magnetic properties of iron oxide nanoparticles, that can be used for bulk materials and liquid samples as well. The magnetometer probe consists of four voltage-programmable commercial Hall sensors and a thin acrylic plate for positioning the sensors. In order to operate, it needs to be attached to a pole of an electromagnet and connected to an AD converter and a computer. It acquires a complete magnetization curve in a couple of minutes and has a magnetic moment sensitivity of 3.5×10 −7 Am 2 . We tested its performance with magnetic nanoparticles containing an iron oxide core and having coating layers with different sizes. The magnetization results obtained were compared with measurements performed on commercial stand-alone magnetometers, and exhibited errors of about ±0.2 Am 2 /kg (i.e 0.4%) at saturation and below 0.5 Am 2 /kg (i.e. 10%) at remanence. - Highlights: • A low-cost portable Hall magnetometer probe has been built. • The Hall magnetometer probe can be attached to any electromagnet. • The Hall probe was calibrated and successfully compared to industry standard magnetometers. • The Hall probe was able to measure iron oxide nanoparticles with different coatings.

  17. Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

    Science.gov (United States)

    Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

    2018-04-01

    We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

  18. A Biologically Inspired CMOS Image Sensor

    CERN Document Server

    Sarkar, Mukul

    2013-01-01

    Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with their own photoreceptor arrays.  The visual system of insects allows them to fly with a limited intelligence and brain processing power. A CMOS image sensor replicating the perception of vision in insects is discussed and designed in this book for industrial (machine vision) and medical applications. The CMOS metal layer is used to create an embedded micro-polarizer able to sense polarization information. This polarization information is shown to be useful in applications like real time material classification and autonomous agent navigation. Further the sensor is equipped with in pixel analog and digital memories which allow variation of the dynamic range and in-pixel b...

  19. A new CMOS Hall angular position sensor

    Energy Technology Data Exchange (ETDEWEB)

    Popovic, R.S.; Drljaca, P. [Swiss Federal Inst. of Tech., Lausanne (Switzerland); Schott, C.; Racz, R. [SENTRON AG, Zug (Switzerland)

    2001-06-01

    The new angular position sensor consists of a combination of a permanent magnet attached to a shaft and of a two-axis magnetic sensor. The permanent magnet produces a magnetic field parallel with the magnetic sensor plane. As the shaft rotates, the magnetic field also rotates. The magnetic sensor is an integrated combination of a CMOS Hall integrated circuit and a thin ferromagnetic disk. The CMOS part of the system contains two or more conventional Hall devices positioned under the periphery of the disk. The ferromagnetic disk converts locally a magnetic field parallel with the chip surface into a field perpendicular to the chip surface. Therefore, a conventional Hall element can detect an external magnetic field parallel with the chip surface. As the direction of the external magnetic field rotates in the chip plane, the output voltage of the Hall element varies as the cosine of the rotation angle. By placing the Hall elements at the appropriate places under the disk periphery, we may obtain the cosine signals shifted by 90 , 120 , or by any other angle. (orig.)

  20. CMOS latch-up analysis and prevention

    International Nuclear Information System (INIS)

    Shafer, B.D.

    1975-06-01

    An analytical model is presented which develops relationships between ionization rates, minority carrier lifetimes, and latch-up in bulk CMOS integrated circuits. The basic mechanism for latch-up is the SCR action reported by Gregory and Shafer. The SCR is composed of a vertical NPN transistor formed by the N-channel source diffusion, the P-Well, and the N-substrate. The second part of the SCR is the lateral PNP transistor made up of the P-channel source diffusion, the N-substrate, and P-Well. It is shown that the NPN transistor turns on due to photocurrent-induced lateral voltage drops in the base of the transistor. The gain of this double diffused transistor has been shown to be as high as 100. Therefore, the transistor action of this device produces a much larger current flow in the substrate. This transistor current adds to that produced by the P-Well diode photocurrent in the substrate. It is found that the combined flow of current in the substrate forward biases the base emitter junction of the PNP device long before this could occur due to the P-Well photocurrent alone. The analysis indicated that a CD4007A CMOS device biased in the normal mode of operation should latch at about 2 . 10 8 rads/sec. Experimental results produced latch-up at 1 to 3 . 10 8 rads/sec. (U.S.)

  1. Integrated Cu-based TM-pass polarizer using CMOS technology platform

    KAUST Repository

    Ng, Tien Khee

    2010-01-01

    A transverse-magnetic-pass (TM-pass) copper (Cu) polarizer is proposed and analyzed using the previously published two-dimensional Method-of-Lines beam-propagation model. The proposed polarizer exhibits a simulated high-pass filter characteristics, with TM0 and TE0 mode transmissivity of >70% and <5%, respectively, in the wavelength regime of 1.2-1.6 μm. The polarization extinction ratio (PER) given by 10 log10 (PTM0)/(PTE0) is +11.5 dB across the high-pass wavelength regime. To the best of the authors\\' knowledge, we report here the smallest footprint CMOS-platform compatible TM-polarizer.

  2. Transmission of wireless neural signals through a 0.18 µm CMOS low-power amplifier.

    Science.gov (United States)

    Gazziro, M; Braga, C F R; Moreira, D A; Carvalho, A C P L F; Rodrigues, J F; Navarro, J S; Ardila, J C M; Mioni, D P; Pessatti, M; Fabbro, P; Freewin, C; Saddow, S E

    2015-01-01

    In the field of Brain Machine Interfaces (BMI) researchers still are not able to produce clinically viable solutions that meet the requirements of long-term operation without the use of wires or batteries. Another problem is neural compatibility with the electrode probes. One of the possible ways of approaching these problems is the use of semiconductor biocompatible materials (silicon carbide) combined with an integrated circuit designed to operate with low power consumption. This paper describes a low-power neural signal amplifier chip, named Cortex, fabricated using 0.18 μm CMOS process technology with all electronics integrated in an area of 0.40 mm(2). The chip has 4 channels, total power consumption of only 144 μW, and is impedance matched to silicon carbide biocompatible electrodes.

  3. All-CMOS night vision viewer with integrated microdisplay

    Science.gov (United States)

    Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

    2014-02-01

    The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

  4. Materials compatibility information data bank

    International Nuclear Information System (INIS)

    Mead, K.E.

    1977-01-01

    A major concern in the design of weapons systems is the compatibility of the materials used with each other and with the enclosed environment. Usually these systems require long term storage with a high reliability for proper function at the end of this storage period. Materials selection is then based on both past experience and laboratory accelerated aging experiments to assure this long term reliability. To assist in the task of materials selection a computerized materials compatibility data bank is being established. This data bank will provide a source of annotated information and references to personnel and documents for both the designer and materials engineer to draw on for guidance in materials selection. The data bank storage and information retrieval philosophy will be discussed and procedures for information gathering outlined. Examples of data entries and search routines will be presented to demonstrate the usefulness and versatility of the proposed system

  5. Low-loss CMOS copper plasmonic waveguides at the nanoscale (Conference Presentation)

    Science.gov (United States)

    Fedyanin, Dmitry Y.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.; Volkov, Valentyn S.

    2016-05-01

    Implementation of optical components in microprocessors can increase their performance by orders of magnitude. However, the size of optical elements is fundamentally limited by diffraction, while miniaturization is one of the essential concepts in the development of high-speed and energy-efficient electronic chips. Surface plasmon polaritons (SPPs) are widely considered to be promising candidates for the next generation of chip-scale technology thanks to the ability to break down the fundamental diffraction limit and manipulate optical signals at the truly nometer scale. In the past years, a variety of deep-subwavelength plasmonic structures have been proposed and investigated, including dielectric-loaded SPP waveguides, V-groove waveguides, hybrid plasmonic waveguides and metal nanowires. At the same time, for practical application, such waveguide structures must be integrated on a silicon chip and be fabricated using CMOS fabrication process. However, to date, acceptable characteristics have been demonstrated only with noble metals (gold and silver), which are not compatible with industry-standard manufacturing technologies. On the other hand, alternative materials introduce enormous propagation losses due absorption in the metal. This prevents plasmonic components from implementation in on-chip nanophotonic circuits. In this work, we experimentally demonstrate for the first time that copper plasmonic waveguides fabricated in a CMOS compatible process can outperform gold waveguides showing the same level of mode confinement and lower propagation losses. At telecommunication wavelengths, the fabricated ultralow-loss deep-subwavelength hybrid plasmonic waveguides ensure a relatively long propagation length of more than 50 um along with strong mode confinement with the mode size down to lambda^2/70, which is confirmed by direct scanning near-field optical microscopy (SNOM) measurements. These results create the backbone for design and development of high

  6. Multiparty Compatibility for Concurrent Objects

    Directory of Open Access Journals (Sweden)

    Roly Perera

    2016-06-01

    Full Text Available Objects and actors are communicating state machines, offering and consuming different services at different points in their lifecycle. Two complementary challenges arise when programming such systems. When objects interact, their state machines must be "compatible", so that services are requested only when they are available. Dually, when objects refine other objects, their state machines must be "compliant", so that services are honoured whenever they are promised. In this paper we show how the idea of multiparty compatibility from the session types literature can be applied to both of these problems. We present an untyped language in which concurrent objects are checked automatically for compatibility and compliance. For simple objects, checking can be exhaustive and has the feel of a type system. More complex objects can be partially validated via test cases, leading to a methodology closer to continuous testing. Our proof-of-concept implementation is limited in some important respects, but demonstrates the potential value of the approach and the relationship to existing software development practices.

  7. Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies

    KAUST Repository

    Hussain, Aftab M.

    2016-12-01

    With the advancement of silicon electronics under threat from physical limits to dimensional scaling, the International Technology Roadmap for Semiconductors (ITRS) released a white paper in 2008, detailing the ways in which the semiconductor industry can keep itself continually growing in the twenty-first century. Two distinct paths were proposed: More-Moore and More-than-Moore. While More-Moore approach focuses on the continued use of state-of-the-art, complementary metal oxide semiconductor (CMOS) technology for next generation electronics, More-than-Moore approach calls for a disruptive change in the system architecture and integration strategies. In this doctoral thesis, we investigate both the approaches to obtain performance improvement in the state-of-the-art, CMOS electronics. We present a novel channel material, SiSn, for fabrication of CMOS circuits. This investigation is in line with the More-Moore approach because we are relying on the established CMOS industry infrastructure to obtain an incremental change in the integrated circuit (IC) performance by replacing silicon channel with SiSn. We report a simple, low-cost and CMOS compatible process for obtaining single crystal SiSn wafers. Tin (Sn) is deposited on silicon wafers in the form of a metallic thin film and annealed to facilitate diffusion into the silicon lattice. This diffusion provides for sufficient SiSn layer at the top surface for fabrication of CMOS devices. We report a lowering of band gap and enhanced mobility for SiSn channel MOSFETs compared to silicon control devices. We also present a process for fabrication of vertically integrated flexible silicon to form 3D integrated circuits. This disruptive change in the state-of-the-art, in line with the More-than-Moore approach, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We

  8. Experimental measurement of a high resolution CMOS detector coupled to CsI scintillators under X-ray radiation

    International Nuclear Information System (INIS)

    Michail, C.; Valais, I.; Seferis, I.; Kalyvas, N.; Fountos, G.; Kandarakis, I.

    2015-01-01

    The purpose of the present study was to assess the information content of structured CsI:Tl scintillating screens, specially treated to be compatible to a CMOS digital imaging optical sensor, in terms of the information capacity (IC), based on Shannon's mathematical communication theory. IC was assessed after the experimental determination of the Modulation Transfer Function (MTF) and the Normalized Noise Power Spectrum (NNPS) in the mammography and general radiography energy range. The CMOS sensor was coupled to three columnar CsI:Tl scintillator screens obtained from the same manufacturer with thicknesses of 130, 140 and 170 μm respectively, which were placed in direct contact with the optical sensor. The MTF was measured using the slanted-edge method while NNPS was determined by 2D Fourier transforming of uniformly exposed images. Both parameters were assessed by irradiation under the mammographic W/Rh (130, 140 and 170 μm CsI screens) and the RQA-5 (140 and 170 μm CsI screens) (IEC 62220-1) beam qualities. The detector response function was linear for the exposure range under investigation. At 70 kVp, under the RQA-5 conditions IC values were found to range between 2229 and 2340 bits/mm 2 . At 28 kVp the corresponding IC values were found to range between 2262 and 2968 bits/mm 2 . The information content of CsI:Tl scintillating screens in combination to the high resolution CMOS sensor, investigated in the present study, where found optimized for use in digital mammography imaging systems. - Highlights: • Three structured CsI:Tl screens (130,140 & 170 um) were coupled to a CMOS sensor. • MTF of the CsI/CMOS was higher than GOS:Tb and CsI based digital imaging systems. • IC of CsI:Tl/CMOS was found optimized for use in digital mammography systems

  9. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

    Directory of Open Access Journals (Sweden)

    Jose Luis Muñoz-Gamarra

    2016-02-01

    Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

  10. Development of Autonomous Magnetometer Rotorcraft For Wide Area Assessment

    Energy Technology Data Exchange (ETDEWEB)

    Mark D. McKay; Matthew O. Anderson

    2011-08-01

    Large areas across the United States and internationally are potentially contaminated with unexploded ordinance (UXO), with some ranges encompassing tens to hundreds of thousands of acres. Technologies are needed which will allow for cost effective wide area scanning with (1) near 100% coverage and (2) near 100% detection of subsurface ordnance or features indicative of subsurface ordnance. The current approach to wide area assessment is a multi-level one, in which medium - altitude fixed wing optical imaging is used for an initial site assessment. This assessment is followed with low altitude manned helicopter based magnetometry. Subsequent to this wide area assessment targeted surface investigations are performed using either towed geophysical sensor arrays or man portable sensors. In order to be an effective tool for small UXO detection, the sensing altitude for magnetic site investigations needs to be on the order of 1 to 3 meters. These altitude requirements mean that manned helicopter surveys will generally only be feasible in large, open and relatively flat terrains. While such surveys are effective in mapping large areas relatively fast there are substantial mobilization/demobilization, staffing and equipment costs associated with these surveys, resulting in costs of approximately $100-$150/acre. In addition, due to the low altitude there are substantial risks to pilots and equipment. Surface towed arrays provide highresolution maps but have other limitations, e.g. in their ability to navigate rough terrain effectively. Thus there is a need for other systems, which can be used for effective data collection. An Unmanned Aerial Vehicle (UAV) magnetometer platform is an obvious alternative. The motivation behind such a system is that it reduces risk to operators, is lower in initial and Operational and Maintenance (O&M) costs (and can thus potentially be applied to smaller sites) and has the potential of being more effective in terms of detection and possibly

  11. In-Flight Calibration of the MMS Fluxgate Magnetometers

    Science.gov (United States)

    Bromund, K. R.; Plaschke, F.; Strangeway, R. J.; Anderson, B. J.; Huang, B. G.; Magnes, W.; Fischer, D.; Nakamura, R.; Leinweber, H. K.; Russell, C. T.; hide

    2017-01-01

    We present an overview of the approach to in-flight calibration, which is a coordinated effort between the University of California Los Angeles (UCLA), Space Research Institute, Graz, Austria (IWF) and the NASA Goddard Space Flight Center (GSFC). We present details of the calibration effort at GSFC. During the first dayside season of the Magnetospheric Multiscale (MMS) mission, the in-flight calibration process for the Fluxgate magnetometers (FGM) implemented an algorithm that selected a constant offset (zero-level) for each sensor on each orbit. This method was generally able to reduce the amplitude of residual spin tone to less than 0.2 nT within the region of interest. However, there are times when the offsets do show significant short-term variations. These variations are most prominent in the nighttime season (phase 1X), when eclipses are accompanied by offset changes as large as 1 nT. Eclipses are followed by a recovery period as long as 12 hours where the offsets continue to change as temperatures stabilize. Understanding and compensating for these changes will become critical during Phase 2 of the mission in 2017, when the nightside will become the focus of MMS science. Although there is no direct correlation between offset and temperature, the offsets are seen for the period of any given week to be well-characterized as function of instrument temperature. Using this property, a new calibration method has been developed that has proven effective in compensating for temperature-dependent offsets during phase 1X of the MMS mission and also promises to further refine calibration quality during the dayside season.

  12. Development of a CMOS process using high energy ion implantation

    International Nuclear Information System (INIS)

    Stolmeijer, A.

    1986-01-01

    The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

  13. Prevention of CMOS latch-up by gold doping

    International Nuclear Information System (INIS)

    Dawes, W.R.; Derbenwick, G.F.

    1976-01-01

    CMOS integrated circuits fabricated with the bulk silicon technology typically exhibit latch-up effects in either an ionizing radiation environment or an overvoltage stress condition. The latch-up effect has been shown to arise from regenerative switching, analogous to an SCR, in the adjacent parasitic bipolar transistors formed during the fabrication of a bulk CMOS device. Once latch-up has been initiated, it is usually self-sustaining and eventually destructive. Naturally, the circuit is inoperative during latch-up. This paper discusses a generic process technique that prevents the latch-up mechanism in CMOS devices

  14. CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

    2000-08-10

    In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

  15. Radiation tolerance of a spin-dependent tunnelling magnetometer for space applications

    International Nuclear Information System (INIS)

    Persson, Anders; Thornell, Greger; Nguyen, Hugo

    2011-01-01

    To meet the increasing demand for miniaturized space instruments, efforts have been made to miniaturize traditional magnetometers, e.g. fluxgate and spin-exchange relaxation-free magnetometers. These have, for different reasons, turned out to be difficult. New technologies are needed, and promising in this respect are tunnelling magnetoresistive (TMR) magnetometers, which are based on thin film technology. However, all new space devices first have to be qualified, particularly in terms of radiation resistance. A study on TMR magnetometers' vulnerability to radiation is crucial, considering the fact that they employ a dielectric barrier, which can be susceptible to charge trapping from ionizing radiation. Here, a TMR-based magnetometer, called the spin-dependent tunnelling magnetometer (SDTM), is presented. A magnetometer chip consisting of three Wheatstone bridges, with an angular pitch of 120°, was fabricated using microstructure technology. Each branch of the Wheatstone bridges consists of eight pairs of magnetic tunnel junctions (MTJs) connected in series. Two such chips are used to measure the three-dimensional magnetic field vector. To investigate the SDTM's resistance to radiation, one branch of a Wheatstone bridge was irradiated with gamma rays from a Co 60 source with a dose rate of 10.9 rad min −1 to a total dose of 100 krad. The TMR of the branch was monitored in situ, and the easy axis TMR loop and low-frequency noise characteristics of a single MTJ were acquired before and after irradiation with the total dose. It was concluded that radiation did not influence the MTJs in any noticeable way in terms of the TMR ratio, coercivity, magnetostatic coupling or low-frequency noise

  16. The CMOS integration of a power inverter

    Science.gov (United States)

    Mannarino, Eric Francis

    Due to their falling costs, the use of renewable energy systems is expanding around the world. These systems require the conversion of DC power into grid-synchronous AC power. Currently, the inverters that carry out this task are built using discrete transistors. TowerJazz Semiconductor Corp. has created a commercial CMOS process that allows for blocking voltages of up to 700 V, effectively removing the barrier to integrating power inverters onto a single chip. This thesis explores this process using two topologies. The first is a cell-based switched-capacitor topology first presented by Ke Zou. The second is a novel topology that explores the advantage of using a bused input-output system, as in digital electronics. Simulations run on both topologies confirm the high-efficiency demonstrated in Zou’s process as well as the advantage the bus-based system has in output voltage levels.

  17. Floating Gate CMOS Dosimeter With Frequency Output

    Science.gov (United States)

    Garcia-Moreno, E.; Isern, E.; Roca, M.; Picos, R.; Font, J.; Cesari, J.; Pineda, A.

    2012-04-01

    This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.

  18. CMOS image sensor with contour enhancement

    Science.gov (United States)

    Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

    2010-10-01

    Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

  19. A Multipurpose CMOS Platform for Nanosensing

    Directory of Open Access Journals (Sweden)

    Alberto Bonanno

    2016-11-01

    Full Text Available This paper presents a customizable sensing system based on functionalized nanowires (NWs assembled onto complementary metal oxide semiconductor (CMOS technology. The Micro-for-Nano (M4N chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  20. A Multipurpose CMOS Platform for Nanosensing.

    Science.gov (United States)

    Bonanno, Alberto; Sanginario, Alessandro; Marasso, Simone L; Miccoli, Beatrice; Bejtka, Katarzyna; Benetto, Simone; Demarchi, Danilo

    2016-11-30

    This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW-229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  1. CMOS front ends for millimeter wave wireless communication systems

    CERN Document Server

    Deferm, Noël

    2015-01-01

    This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

  2. CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

    Science.gov (United States)

    Khan, Sherjeel M; Gumus, Abdurrahman; Nassar, Joanna M; Hussain, Muhammad M

    2018-04-01

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

    Science.gov (United States)

    Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

    2006-01-01

    This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

  4. Design of CMOS imaging system based on FPGA

    Science.gov (United States)

    Hu, Bo; Chen, Xiaolai

    2017-10-01

    In order to meet the needs of engineering applications for high dynamic range CMOS camera under the rolling shutter mode, a complete imaging system is designed based on the CMOS imaging sensor NSC1105. The paper decides CMOS+ADC+FPGA+Camera Link as processing architecture and introduces the design and implementation of the hardware system. As for camera software system, which consists of CMOS timing drive module, image acquisition module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The ISE 14.6 emulator ISim is used in the simulation of signals. The imaging experimental results show that the system exhibits a 1280*1024 pixel resolution, has a frame frequency of 25 fps and a dynamic range more than 120dB. The imaging quality of the system satisfies the requirement of the index.

  5. CMOS Enabled Microfluidic Systems for Healthcare Based Applications

    KAUST Repository

    Khan, Sherjeel M.; Gumus, Abdurrahman; Nassar, Joanna M.; Hussain, Muhammad Mustafa

    2018-01-01

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

  6. CMOS serial link for fully duplexed data communication

    Science.gov (United States)

    Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

    1995-04-01

    This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

  7. CMOS Enabled Microfluidic Systems for Healthcare Based Applications

    KAUST Repository

    Khan, Sherjeel M.

    2018-02-27

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

  8. A Single-Transistor Active Pixel CMOS Image Sensor Architecture

    International Nuclear Information System (INIS)

    Zhang Guo-An; He Jin; Zhang Dong-Wei; Su Yan-Mei; Wang Cheng; Chen Qin; Liang Hai-Lang; Ye Yun

    2012-01-01

    A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

  9. Depleted CMOS pixels for LHC proton–proton experiments

    International Nuclear Information System (INIS)

    Wermes, N.

    2016-01-01

    While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

  10. CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

    Directory of Open Access Journals (Sweden)

    Haitao Li

    2016-12-01

    Full Text Available Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

  11. Inheritance of graft compatibility in Douglas fir.

    Science.gov (United States)

    D.L. Copes

    1973-01-01

    Graft compatibility of genetically related and unrelated rootstock-scion combinations was compared. Scion clones were 75% compatible when grafted on half-related rootstocks but only 56% compatible when grafted on unrelated rootstocks. Most variance associated with graft incompatibility in Douglas-fir appears to be caused by multiple genes.

  12. Electromagnetic compatibility principles and applications

    CERN Document Server

    Weston, David A

    2001-01-01

    This totally revised and expanded reference/text provides comprehensive, single-source coverage of the design, problem solving, and specifications of electromagnetic compatibility (EMC) into electrical equipment/systems-including new information on basic theories, applications, evaluations, prediction techniques, and practical diagnostic options for preventing EMI through cost-effective solutions. Offers the most recent guidelines, safety limits, and standards for human exposure to electromagnetic fields! Containing updated data on EMI diagnostic verification measurements, as well as over 900 drawings, photographs, tables, and equations-500 more than the previous edition

  13. A novel CMOS SRAM feedback element for SEU environments

    International Nuclear Information System (INIS)

    Verghese, S.; Wortman, J.J.; Kerns, S.E.

    1987-01-01

    A hardened CMOS SRAM has been proposed which utilizes a leaky polysilicon Schottky diode placed in the feedback path to attain the SEU immunity of resistor-coupled SRAMs while improving the access speed of the cell. Novel polysilicon hybrid Schottky-resistor structures which emulate the leaky diodes have been designed and fabricated. The elements' design criteria and methods of fulfilling them are presented along with a practical implementation scheme for CMOS SRAM cells

  14. Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

    OpenAIRE

    Hassan Jassim Motlak

    2015-01-01

    A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to...

  15. CMOS Image Sensors: Electronic Camera On A Chip

    Science.gov (United States)

    Fossum, E. R.

    1995-01-01

    Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

  16. Nonlinear temperature compensation of fluxgate magnetometers with a least-squares support vector machine

    International Nuclear Information System (INIS)

    Pang, Hongfeng; Chen, Dixiang; Pan, Mengchun; Luo, Shitu; Zhang, Qi; Luo, Feilu

    2012-01-01

    Fluxgate magnetometers are widely used for magnetic field measurement. However, their accuracy is influenced by temperature. In this paper, a new method was proposed to compensate the temperature drift of fluxgate magnetometers, in which a least-squares support vector machine (LSSVM) is utilized. The compensation performance was analyzed by simulation, which shows that the LSSVM has better performance and less training time than backpropagation and radical basis function neural networks. The temperature characteristics of a DM fluxgate magnetometer were measured with a temperature experiment box. Forty-five measured data under different magnetic fields and temperatures were obtained and divided into 36 training data and nine test data. The training data were used to obtain the parameters of the LSSVM model, and the compensation performance of the LSSVM model was verified by the test data. Experimental results show that the temperature drift of magnetometer is reduced from 109.3 to 3.3 nT after compensation, which suggests that this compensation method is effective for the accuracy improvement of fluxgate magnetometers. (paper)

  17. A dumbbell-shaped hybrid magnetometer operating in DC-10 kHz

    Science.gov (United States)

    Shi, Hongyu; Wang, Yanzhang; Chen, Siyu; Lin, Jun

    2017-12-01

    This study is motivated by the need to design a hybrid magnetometer operating in a wide-frequency band from DC to 10 kHz. To achieve this objective, a residence times difference fluxgate magnetometer (RTDFM) and an induction magnetometer (IM) have been integrated into a compact form. The hybrid magnetometer has a dumbbell-shaped structure in which the RTDFM transducer is partially inserted into the tube cores of the IM. Thus, the sensitivity of the RTDFM is significantly improved due to the flux amplification. The optimal structure, which has maximum sensitivity enhancement, was obtained through FEM analysis. To validate the theoretical analysis, the optimal hybrid magnetometer was manufactured, and its performance was evaluated. The device has a sensitivity of 45 mV/nT at 1 kHz in IM mode and 0.38 μs/nT in RTDFM mode, which is approximately 3.45 times as large as that of the single RTDFM structure. Furthermore, to obtain a lower noise performance in the entire frequency band, two operation modes switch at the cross frequency (0.16 Hz) of their noise levels. The noise level is 30 pT/√Hz in RTDFM mode and 0.07 pT/√Hz at 1 kHz in IM mode.

  18. Nonlinear temperature compensation of fluxgate magnetometers with a least-squares support vector machine

    Science.gov (United States)

    Pang, Hongfeng; Chen, Dixiang; Pan, Mengchun; Luo, Shitu; Zhang, Qi; Luo, Feilu

    2012-02-01

    Fluxgate magnetometers are widely used for magnetic field measurement. However, their accuracy is influenced by temperature. In this paper, a new method was proposed to compensate the temperature drift of fluxgate magnetometers, in which a least-squares support vector machine (LSSVM) is utilized. The compensation performance was analyzed by simulation, which shows that the LSSVM has better performance and less training time than backpropagation and radical basis function neural networks. The temperature characteristics of a DM fluxgate magnetometer were measured with a temperature experiment box. Forty-five measured data under different magnetic fields and temperatures were obtained and divided into 36 training data and nine test data. The training data were used to obtain the parameters of the LSSVM model, and the compensation performance of the LSSVM model was verified by the test data. Experimental results show that the temperature drift of magnetometer is reduced from 109.3 to 3.3 nT after compensation, which suggests that this compensation method is effective for the accuracy improvement of fluxgate magnetometers.

  19. NetPICOmag: A low-cost networked magnetometer and its applications

    Science.gov (United States)

    Schofield, I.; Connors, M.; Russell, C. T.

    2012-03-01

    NetPICOmag (NPM) is the culmination of a design effort to build a compact, low-cost, laboratory-grade, networked magnetometer designed for remote autonomous operation, suited for research and education. NPM allows wide placement of magnetometers sensitive enough to detect auroral activity and the daily variation, and is suitable for education projects and a range of geophysical applications. The use of networked microcontrollers and GPS timing is applicable to other small instruments for field or local deployment, and an onboard data logging capability has also been demonstrated. We illustrate the value of the placement of low-cost magnetometers to increase coverage in an area through the study of a Pc 5 pulsation event which took place on September 4, 2010. By combining results with those from auroral zone magnetometers supporting the THEMIS project, we find that the phase velocity of these morning sector pulsations was northward on the ground. The event took place under very quiet solar wind conditions, and credible mapping associates it with the inner magnetosphere. Another aspect beyond increasing areal coverage is increasing density of coverage, which becomes feasible with instruments of very low cost. We examine aspects of the April 5, 2010 space weather event which are possible to deduce from closely spaced magnetometers.

  20. Advancement of CMOS Doping Technology in an External Development Framework

    Science.gov (United States)

    Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

    2011-01-01

    The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

  1. Design optimization of radiation-hardened CMOS integrated circuits

    International Nuclear Information System (INIS)

    1975-01-01

    Ionizing-radiation-induced threshold voltage shifts in CMOS integrated circuits will drastically degrade circuit performance unless the design parameters related to the fabrication process are properly chosen. To formulate an approach to CMOS design optimization, experimentally observed analytical relationships showing strong dependences between threshold voltage shifts and silicon dioxide thickness are utilized. These measurements were made using radiation-hardened aluminum-gate CMOS inverter circuits and have been corroborated by independent data taken from MOS capacitor structures. Knowledge of these relationships allows one to define ranges of acceptable CMOS design parameters based upon radiation-hardening capabilities and post-irradiation performance specifications. Furthermore, they permit actual design optimization of CMOS integrated circuits which results in optimum pre- and post-irradiation performance with respect to speed, noise margins, and quiescent power consumption. Theoretical and experimental results of these procedures, the applications of which can mean the difference between failure and success of a CMOS integrated circuit in a radiation environment, are presented

  2. Detergent-compatible bacterial amylases.

    Science.gov (United States)

    Niyonzima, Francois N; More, Sunil S

    2014-10-01

    Proteases, lipases, amylases, and cellulases are enzymes used in detergent formulation to improve the detergency. The amylases are specifically supplemented to the detergent to digest starchy stains. Most of the solid and liquid detergents that are currently manufactured contain alkaline enzymes. The advantages of using alkaline enzymes in the detergent formulation are that they aid in removing tough stains and the process is environmentally friendly since they reduce the use of toxic detergent ingredients. Amylases active at low temperature are preferred as the energy consumption gets reduced, and the whole process becomes cost-effective. Most microbial alkaline amylases are used as detergent ingredients. Various reviews report on the production, purification, characterization, and application of amylases in different industry sectors, but there is no specific review on bacterial or fungal alkaline amylases or detergent-compatible amylases. In this mini-review, an overview on the production and property studies of the detergent bacterial amylases is given, and the stability and compatibility of the alkaline bacterial amylases in the presence of the detergents and the detergent components are highlighted.

  3. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    Science.gov (United States)

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  4. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Science.gov (United States)

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  5. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    KAUST Repository

    Aktakka, Ethem Erkan

    2013-10-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.

  6. Comparison of a triaxial fluxgate magnetometer and Toftness sensometer for body surface EMF measurement.

    Science.gov (United States)

    Zhang, John; Toftness, Dave; Snyder, Brian; Nosco, Dennis; Balcavage, Walter; Nindl, Gabi

    2004-12-01

    The use of magnetic fields to treat disease has intrigued mankind since the time of the ancient Greeks. More recently it has been shown that electromagnetic field (EMF) treatment aids bone healing, and repetitive transcranial magnetic stimulation (rTMS) appears to be beneficial in treating schizophrenia and depression. Since external EMFs influence internal body processes, we hypothesized that measurement of body surface EMFs might be used to detect disease states and direct the course of subsequent therapy. However, measurement of minute body surface EMFs requires use of a sensitive and well documented magnetometer. In this study we evaluated the sensitivity and frequency response of a fluxgate magnetometer with a triaxial probe for use in detecting body surface EMF and we compared the magnetometer readings with a signal from a Toftness Sensometer, operated by an experienced clinician, in the laboratory and in a clinical setting. A Peavy Audio Amplifier and variable power output Telulex signal generator were used to develop 50 microT EMFs in a three coil Merritt coil system. A calibrated magnetometer was used to set a 60 Hz 50 microT field in the coil and an ammeter was used to measure the current required to develop the 50 microT field. At frequencies other than 60 Hz, the field strength was maintained at 50 microT by adjusting the Telulex signal output to keep the current constant. The field generated was monitored using a 10 turn coil connected to an oscilloscope. The oscilloscope reading indicated that the field strength was the same at all frequencies tested. To determine if there was a correspondence between the signals detected by a fluxgate magnetometer (FGM1) and the Toftness Sensometer both devices were placed in the Merritt coil and readings were recorded from the FGM1 and compared with the ability of a highly experienced Toftness operator to detect the 50 microT field. Subsequently, in a clinical setting, FGM1 readings made by an FGM1 technician and

  7. Construction and calibration of a low cost and fully automated vibrating sample magnetometer

    International Nuclear Information System (INIS)

    El-Alaily, T.M.; El-Nimr, M.K.; Saafan, S.A.; Kamel, M.M.; Meaz, T.M.; Assar, S.T.

    2015-01-01

    A low cost vibrating sample magnetometer (VSM) has been constructed by using an electromagnet and an audio loud speaker; where both are controlled by a data acquisition device. The constructed VSM records the magnetic hysteresis loop up to 8.3 KG at room temperature. The apparatus has been calibrated and tested by using magnetic hysteresis data of some ferrite samples measured by two scientifically calibrated magnetometers; model (Lake Shore 7410) and model (LDJ Electronics Inc. Troy, MI). Our VSM lab-built new design proved success and reliability. - Highlights: • A low cost automated vibrating sample magnetometer VSM has been constructed. • The VSM records the magnetic hysteresis loop up to 8.3 KG at room temperature. • The VSM has been calibrated and tested by using some measured ferrite samples. • Our VSM lab-built new design proved success and reliability

  8. Construction and calibration of a low cost and fully automated vibrating sample magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    El-Alaily, T.M., E-mail: toson_alaily@yahoo.com [Physics Department, Faculty of Science, Tanta University, Tanta (Egypt); El-Nimr, M.K.; Saafan, S.A.; Kamel, M.M.; Meaz, T.M. [Physics Department, Faculty of Science, Tanta University, Tanta (Egypt); Assar, S.T. [Engineering Physics and Mathematics Department, Faculty of Engineering, Tanta University, Tanta (Egypt)

    2015-07-15

    A low cost vibrating sample magnetometer (VSM) has been constructed by using an electromagnet and an audio loud speaker; where both are controlled by a data acquisition device. The constructed VSM records the magnetic hysteresis loop up to 8.3 KG at room temperature. The apparatus has been calibrated and tested by using magnetic hysteresis data of some ferrite samples measured by two scientifically calibrated magnetometers; model (Lake Shore 7410) and model (LDJ Electronics Inc. Troy, MI). Our VSM lab-built new design proved success and reliability. - Highlights: • A low cost automated vibrating sample magnetometer VSM has been constructed. • The VSM records the magnetic hysteresis loop up to 8.3 KG at room temperature. • The VSM has been calibrated and tested by using some measured ferrite samples. • Our VSM lab-built new design proved success and reliability.

  9. Field-Programmable Gate Array-based fluxgate magnetometer with digital integration

    Science.gov (United States)

    Butta, Mattia; Janosek, Michal; Ripka, Pavel

    2010-05-01

    In this paper, a digital magnetometer based on printed circuit board fluxgate is presented. The fluxgate is pulse excited and the signal is extracted by gate integration. We investigate the possibility to perform integration on very narrow gates (typically 500 ns) by using digital techniques. The magnetometer is based on field-programmable gate array (FPGA) card: we will show all the advantages and disadvantages, given by digitalization of fluxgate output voltage by means of analog-to-digital converter on FPGA card, as well as digitalization performed by external digitizer. Due to very narrow gate, it is shown that a magnetometer entirely based on a FPGA card is preferable, because it avoids noise due to trigger instability. Both open loop and feedback operative mode are described and achieved results are presented.

  10. Development of a {sup 3}He magnetometer for a neutron electric dipole moment experiment

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Andreas; Heil, Werner; Lauer, Thorsten; Neumann, Daniel [Johannes Gutenberg University, Institute of Physics, Mainz (Germany); Koch, Hans-Christian [Johannes Gutenberg University, Institute of Physics, Mainz (Germany); University of Fribourg, Physics Department, Fribourg (Switzerland); Daum, Manfred [Paul Scherrer Institute, Villigen (Switzerland); Pazgalev, Anatoly [Ioffe Institute, St Petersburg (Russian Federation); Sobolev, Yuri [Johannes Gutenberg University, Institute of Nuclear Chemistry, Mainz (Germany); Petersburg Nuclear Physics Institute, Gatchina (Russian Federation); Weis, Antoine [University of Fribourg, Physics Department, Fribourg (Switzerland)

    2014-01-01

    We have developed a highly sensitive {sup 3}He magnetometer for the accurate measurement of the magnetic field in an experiment searching for an electric dipole moment of the neutron. By measuring the Larmor frequency of nuclear spin polarized {sup 3}He atoms a sensitivity on the femto-Tesla scale can be achieved. A {sup 3}He/Cs-test facility was established at the Institute of Physics of the Johannes Gutenberg University in Mainz to investigate the readout of {sup 3}He free induction decay with a lamp-pumped Cs magnetometer. For this we designed and built an ultra-compact and transportable polarizer unit which polarizes {sup 3}He gas up to 55% by metastability exchange optical pumping. The polarized {sup 3}He was successfully transfered from the polarizer into a glass cell mounted in a magnetic shield and the {sup 3}He free induction decay was detected by a lamp-pumped Cs magnetometer. (orig.)

  11. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  12. Coherent population trapping magnetometer by differential detecting magneto–optic rotation effect

    International Nuclear Information System (INIS)

    Zhang Fan; Tian Yuan; Zhang Yi; Gu Si-Hong

    2016-01-01

    A pocket coherent population trapping (CPT) atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated. Using the differential detecting magneto–optic rotation effect, a CPT spectrum with the background canceled and a high signal-to-noise ratio is obtained. The experimental results reveal that the sensitivity of the proposed scheme can be improved by half an order, and the ability to detect weak magnetic fields is extended one-fold. Therefore, the proposed scheme is suited to realize a pocket-size CPT magnetometer. (paper)

  13. Obtaining 'images' from iron objects using a 3-axis fluxgate magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Chilo, Jose [University of Gaevle, S-80176 Gaevle (Sweden); Jabor, Abbas [Royal Institute of Technology, Department of Physics, S-106 91 Stockholm (Sweden); Lizska, Ludwik [Swedish Institute of Space Physics in Umea (Sweden); Eide, Age J. [Ostfold University College, N-1757 Halden (Norway); Lindblad, Thomas [Royal Institute of Technology, Department of Physics, S-106 91 Stockholm (Sweden)], E-mail: lindblad@particle.kth.se

    2007-10-01

    Magnetic objects can cause local variations in the Earth's magnetic field that can be measured with a magnetometer. Here we used tri-axial magnetometer measurements and an analysis method employing wavelet techniques to determine the 'signature' or 'fingerprint' of different iron objects. Clear distinctions among the iron samples were observed. The time-dependent changes in the frequency powers were extracted by use of the Morlet wavelet corresponding to frequency bands from 0.1 to 100 Hz.

  14. Construction and calibration of a low cost and fully automated vibrating sample magnetometer

    Science.gov (United States)

    El-Alaily, T. M.; El-Nimr, M. K.; Saafan, S. A.; Kamel, M. M.; Meaz, T. M.; Assar, S. T.

    2015-07-01

    A low cost vibrating sample magnetometer (VSM) has been constructed by using an electromagnet and an audio loud speaker; where both are controlled by a data acquisition device. The constructed VSM records the magnetic hysteresis loop up to 8.3 KG at room temperature. The apparatus has been calibrated and tested by using magnetic hysteresis data of some ferrite samples measured by two scientifically calibrated magnetometers; model (Lake Shore 7410) and model (LDJ Electronics Inc. Troy, MI). Our VSM lab-built new design proved success and reliability.

  15. Integrated high-transition temperature magnetometer with only two superconducting layers

    DEFF Research Database (Denmark)

    Kromann, R.; Kingston, J.J.; Miklich, A.H.

    1993-01-01

    We describe the fabrication and testing of an integrated YBa2Cu3O7-x thin-film magnetometer consisting of a dc superconducting quantum interference device (SQUID), with biepitaxial grain boundary junctions, integrated with a flux transformer on a single substrate. Only two superconducting layers...... are required, the SQUID body serving as the crossunder that completes the multiturn flux transformer. The highest temperature at which any of the magnetometers functioned was 76 K. At 60 K the magnetic field gain of this device was 63, and the magnetic field noise was 160 fT Hz-1/2 at 2 kHz, increasing to 3...

  16. Membrane-based torque magnetometer: Enhanced sensitivity by optical readout of the membrane displacement

    Science.gov (United States)

    Blankenhorn, M.; Heintze, E.; Slota, M.; van Slageren, J.; Moores, B. A.; Degen, C. L.; Bogani, L.; Dressel, M.

    2017-09-01

    The design and realization of a torque magnetometer is reported that reads the deflection of a membrane by optical interferometry. The compact instrument allows for low-temperature measurements of tiny crystals less than a microgram with a significant improvement in sensitivity, signal-to-noise ratio as well as data acquisition time compared with conventional magnetometry and offers an enormous potential for further improvements and future applications in different fields. Magnetic measurements on single-molecule magnets demonstrate the applicability of the membrane-based torque magnetometer.

  17. Vector magnetometer design study: Analysis of a triaxial fluxgate sensor design demonstrates that all MAGSAT Vector Magnetometer specifications can be met

    Science.gov (United States)

    Adams, D. F.; Hartmann, U. G.; Lazarow, L. L.; Maloy, J. O.; Mohler, G. W.

    1976-01-01

    The design of the vector magnetometer selected for analysis is capable of exceeding the required accuracy of 5 gamma per vector field component. The principal elements that assure this performance level are very low power dissipation triaxial feedback coils surrounding ring core flux-gates and temperature control of the critical components of two-loop feedback electronics. An analysis of the calibration problem points to the need for improved test facilities.

  18. Lunar magnetic anomalies detected by the Apollo substatellite magnetometers

    Science.gov (United States)

    Hood, L.L.; Coleman, P.J.; Russell, C.T.; Wilhelms, D.E.

    1979-01-01

    Properties of lunar crustal magnetization thus far deduced from Apollo subsatellite magnetometer data are reviewed using two of the most accurate presently available magnetic anomaly maps - one covering a portion of the lunar near side and the other a part of the far side. The largest single anomaly found within the region of coverage on the near-side map correlates exactly with a conspicuous, light-colored marking in western Oceanus Procellarum called Reiner Gamma. This feature is interpreted as an unusual deposit of ejecta from secondary craters of the large nearby primary impact crater Cavalerius. An age for Cavalerius (and, by implication, for Reiner Gamma) of 3.2 ?? 0.2 ?? 109 y is estimated. The main (30 ?? 60 km) Reiner Gamma deposit is nearly uniformly magnetized in a single direction, with a minimum mean magnetization intensity of ???7 ?? 10-2 G cm3/g (assuming a density of 3 g/cm3), or about 700 times the stable magnetization component of the most magnetic returned samples. Additional medium-amplitude anomalies exist over the Fra Mauro Formation (Imbrium basin ejecta emplaced ???3.9 ?? 109 y ago) where it has not been flooded by mare basalt flows, but are nearly absent over the maria and over the craters Copernicus, Kepler, and Reiner and their encircling ejecta mantles. The mean altitude of the far-side anomaly gap is much higher than that of the near-side map and the surface geology is more complex, so individual anomaly sources have not yet been identified. However, it is clear that a concentration of especially strong sources exists in the vicinity of the craters Van de Graaff and Aitken. Numerical modeling of the associated fields reveals that the source locations do not correspond with the larger primary impact craters of the region and, by analogy with Reiner Gamma, may be less conspicuous secondary crater ejecta deposits. The reason for a special concentration of strong sources in the Van de Graaff-Aitken region is unknown, but may be indirectly

  19. Simulation of SEU transients in CMOS ICs

    International Nuclear Information System (INIS)

    Kaul, N.; Bhuva, B.L.; Kerns, S.E.

    1991-01-01

    This paper reports that available analytical models of the number of single-event-induced errors (SEU) in combinational logic systems are not easily applicable to real integrated circuits (ICs). An efficient computer simulation algorithm set, SITA, predicts the vulnerability of data stored in and processed by complex combinational logic circuits to SEU. SITA is described in detail to allow researchers to incorporate it into their error analysis packages. Required simulation algorithms are based on approximate closed-form equations modeling individual device behavior in CMOS logic units. Device-level simulation is used to estimate the probability that ion-device interactions produce erroneous signals capable of propagating to a latch (or n output node), and logic-level simulation to predict the spread of such erroneous, latched information through the IC. Simulation results are compared to those from SPICE for several circuit and logic configurations. SITA results are comparable to this established circuit-level code, and SITA can analyze circuits with state-of-the-art device densities (which SPICE cannot). At all IC complexity levels, SITAS offers several factors of 10 savings in simulation time over SPICE

  20. Fast Hopping Frequency Generation in Digital CMOS

    CERN Document Server

    Farazian, Mohammad; Gudem, Prasad S

    2013-01-01

    Overcoming the agility limitations of conventional frequency synthesizers in multi-band OFDM ultra wideband is a key research goal in digital technology. This volume outlines a frequency plan that can generate all the required frequencies from a single fixed frequency, able to implement center frequencies with no more than two levels of SSB mixing. It recognizes the need for future synthesizers to bypass on-chip inductors and operate at low voltages to enable the increased integration and efficiency of networked appliances. The author examines in depth the architecture of the dividers that generate the necessary frequencies from a single base frequency and are capable of establishing a fractional division ratio.   Presenting the first CMOS inductorless single PLL 14-band frequency synthesizer for MB-OFDMUWB makes this volume a key addition to the literature, and with the synthesizer capable of arbitrary band-hopping in less than two nanoseconds, it operates well within the desired range on a 1.2-volt power s...

  1. Electrothermal frequency references in standard CMOS

    CERN Document Server

    Kashmiri, S Mahdi

    2013-01-01

    This book describes an alternative method of accurate on-chip frequency generation in standard CMOS IC processes. This method exploits the thermal-diffusivity of silicon, the rate at which heat diffuses through a silicon substrate.  This is the first book describing thermal-diffusivity-based frequency references, including the complete theoretical methodology supported by practical realizations that prove the feasibility of the method.  Coverage also includes several circuit and system-level solutions for the analog electronic circuit design challenges faced.   ·         Surveys the state-of-the-art in all-silicon frequency references; ·         Examines the thermal properties of silicon as a solution for the challenge of on-chip accurate frequency generation; ·         Uses simplified modeling approaches that allow an electronics engineer easily to simulate the electrothermal elements; ·         Follows a top-down methodology in circuit design, in which system-level des...

  2. A New CMOS Posicast Pre-shaper for Vibration Reduction of CMOS Op-Amps

    Science.gov (United States)

    Rasoulzadeh, M.; Ghaznavi-Ghoushchi, M. B.

    2010-06-01

    Posicast-based control is a widely used method in vibration reduction of lightly damped oscillatory systems especially in mechanical fields. The target systems to apply Posicast method are the systems which are excited by pulse inputs. Using the Posicast idea, the input pulse is reshaped into a new pulse, which is called Posicast pulse. Applying the generated Posicast pulse reduces the undesired oscillatory manner of under-test systems. In this paper, a fully CMOS Pulse pre-shaper circuit for realization of Posicast command is proposed. Our design is based on delay-and-add approach for the incoming pulses. The delay is done via a modified Schmitt Trigger-like circuit. The adder circuit is implemented by a simple non-binary analog adder terminated by a passive element. Our proposed design has a reasonable flexibility in configuration of time delay and amplitude of the desired pulse-like shapes. The delay is controlled via the delay unit and the pre-shaped pulse's amplitudes are controlled by an analog adder unit. The overall system has 18 MOS transistors, one small capacitor, and one resistor. To verify the effectiveness of the recommended method, it is experienced on a real CMOS Op-Amp. HSPICE simulation results, on 0.25u technology, show a significant reduction on overshoot and settling time of the under-test Op-Amp. The mentioned reduction is more than 95% in overshoot and more than 60% in settling time of the system.

  3. Role of value compatibility in IT adoption

    DEFF Research Database (Denmark)

    Bunker, Deborah; Kautz, Karlheinz; Nguyen, Anne Luu Thanh

    2007-01-01

    Compatibility has been recognised as an important element in the adoption of IT innovations in organisations but as a concept it has been generally limited to technical or functional factors. Compatibility is also significant, however, with regard to value compatibility between the organisation......, and the adopted IT innovation. We propose a framework to determine value compatibility analysing the organisation's and information system's structure, practices and culture, and explore the value compatibility of an organisation with its adopted self-service computer-based information system. A case study......-service acceptance and training issues experienced by the case organisation. These findings add insight into the problems experienced with value compatibility and the adoption of the information systems, and show the potential use of the proposed framework in the detection of such problems.Journal of Information...

  4. Electromagnetic Compatibility Design of the Computer Circuits

    Science.gov (United States)

    Zitai, Hong

    2018-02-01

    Computers and the Internet have gradually penetrated into every aspect of people’s daily work. But with the improvement of electronic equipment as well as electrical system, the electromagnetic environment becomes much more complex. Electromagnetic interference has become an important factor to hinder the normal operation of electronic equipment. In order to analyse the computer circuit compatible with the electromagnetic compatibility, this paper starts from the computer electromagnetic and the conception of electromagnetic compatibility. And then, through the analysis of the main circuit and system of computer electromagnetic compatibility problems, we can design the computer circuits in term of electromagnetic compatibility. Finally, the basic contents and methods of EMC test are expounded in order to ensure the electromagnetic compatibility of equipment.

  5. Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

    NARCIS (Netherlands)

    Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

  6. Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process...

  7. CMOS Imaging Sensor Technology for Aerial Mapping Cameras

    Science.gov (United States)

    Neumann, Klaus; Welzenbach, Martin; Timm, Martin

    2016-06-01

    In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

  8. Characterization of active CMOS pixel sensors on high resistive substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

    2016-07-01

    Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  9. VLSI scaling methods and low power CMOS buffer circuit

    International Nuclear Information System (INIS)

    Sharma Vijay Kumar; Pattanaik Manisha

    2013-01-01

    Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

  10. Design and Fabrication of Vertically-Integrated CMOS Image Sensors

    Science.gov (United States)

    Skorka, Orit; Joseph, Dileepan

    2011-01-01

    Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

  11. CMOS Cell Sensors for Point-of-Care Diagnostics

    Science.gov (United States)

    Adiguzel, Yekbun; Kulah, Haluk

    2012-01-01

    The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies. PMID:23112587

  12. Space Weather Magnetometer Set with Automated AC Spacecraft Field Correction for GEO-KOMPSAT-2A

    Science.gov (United States)

    Auster, U.; Magnes, W.; Delva, M.; Valavanoglou, A.; Leitner, S.; Hillenmaier, O.; Strauch, C.; Brown, P.; Whiteside, B.; Bendyk, M.; Hilgers, A.; Kraft, S.; Luntama, J. P.; Seon, J.

    2016-05-01

    Monitoring the solar wind conditions, in particular its magnetic field (interplanetary magnetic field) ahead of the Earth is essential in performing accurate and reliable space weather forecasting. The magnetic condition of the spacecraft itself is a key parameter for the successful performance of the magnetometer onboard. In practice a condition with negligible magnetic field of the spacecraft cannot always be fulfilled and magnetic sources on the spacecraft interfere with the natural magnetic field measured by the space magnetometer. The presented "ready-to-use" Service Oriented Spacecraft Magnetometer (SOSMAG) is developed for use on any satellite implemented without magnetic cleanliness programme. It enables detection of the spacecraft field AC variations on a proper time scale suitable to distinguish the magnetic field variations relevant to space weather phenomena, such as sudden increase in the interplanetary field or southward turning. This is achieved through the use of dual fluxgate magnetometers on a short boom (1m) and two additional AMR sensors on the spacecraft body, which monitor potential AC disturbers. The measurements of the latter sensors enable an automated correction of the AC signal contributions from the spacecraft in the final magnetic vector. After successful development and test of the EQM prototype, a flight model (FM) is being built for the Korean satellite Geo-Kompsat 2A, with launch foreseen in 2018.

  13. Mapping of Ambient Magnetic Fields within Liquid Helium Dewar for Testing of a DC SQUID Magnetometer

    International Nuclear Information System (INIS)

    Newhouse, Randal

    2003-01-01

    In an effort to explore the cavity lights phenomenon, Experimental Facilities Department at SLAC is testing a DC SQUID magnetometer. Due to the nature of the SQUID magnetometer and the intended tests, the earth's magnetic field must be negated. It is proposed to reduce ambient fields using bucking coils. First, however, an accurate map of the magnetic field inside the liquid helium Dewar where the experiment is going to take place needed to be made. This map was made using a three-axis fluxgate magnetometer mounted on a 3D positioning device made for this purpose. A ten inch tall volume within the Dewar was measured at data points approximately an inch from each other in all three axes. A LabVEIW program took readings from the magnetometer at 2 ms intervals for 1000 readings in such a way as to eliminate any ambient 60 Hz signals that may be present in the data. This data was stored in spreadsheet format and was analyzed to determine how the magnetic field within the Dewar was changing as a function of position

  14. Magnetorelaxometry of magnetic nanoparticles with fluxgate magnetometers for the analysis of biological targets

    International Nuclear Information System (INIS)

    Ludwig, Frank; Heim, Erik; Maeuselein, Sascha; Eberbeck, Dietmar; Schilling, Meinhard

    2005-01-01

    A magnetorelaxometry system based on sensitive fluxgate magnetometers for the analysis of the relaxation behavior of magnetic nanoparticles is presented. The system is tested with a dilution series of magnetite. The results are directly compared with data obtained with a SQUID magnetorelaxometry system measured on the same samples. Advantages of using fluxgates rather than SQUIDs for magnetorelaxometry are discussed

  15. Z3 model of Saturns magnetic field and the Pioneer 11 vector helium magnetometer observations

    International Nuclear Information System (INIS)

    Connerney, J.E.P.; Acuna, M.H.; Ness, N.F.

    1984-05-01

    Magnetic field observations obtained by the Pioneer 11 vector helium magnetometer are compared with the Z(sub 3) model magnetic field. These Pioneer 11 observations, obtained at close-in radial distances, constitute an important and independent test of the Z(sub 3) zonal harmonic model, which was derived from Voyager 1 and Voyager 2 fluxgate magnetometer observations. Differences between the Pioneer 11 magnetometer and the Z(sub 3) model field are found to be small (approximately 1%) and quantitatively consistent with the expected instrumental accuracy. A detailed examination of these differences in spacecraft payload coordinates shows that they are uniquely associated with the instrument frame of reference and operation. A much improved fit to the Pioneer 11 observations is obtained by rotation of the instrument coordinate system about the spacecraft spin axis by 1.4 degree. With this adjustment, possibly associated with an instrumental phase lag or roll attitude error, the Pioneer 11 vector helium magnetometer observations are fully consistent with the Voyager Z(sub 3) model

  16. A novel HTS magnetometer, exploiting the low jc of bulk YBCO

    International Nuclear Information System (INIS)

    Gallop, J.C.; Lilleyman, S.; Langham, C.D.; Radcliffe, W.J.; Stewart, M.

    1989-01-01

    The authors report here a novel of magnetometer which is based on the low critical magnetic field H/sub cl/ of sintered samples of the high temperature ceramic superconductor YBa/sub 2/Cu/sub 3/O/sub y/. By driving a sample of the superconductor around a magnetization hysteresis loop, at a frequency of --100 kHz, and detecting the induced voltage in a coil coupled to the sample, at the second harmonic of the drive frequency, the authors find that this voltage is linearly dependent on the aplied d.c. magnetic field in which the sample is situated. They present a model which explains the operation of this magnetometer. This device, while not as sensitive as a SQUID, has the advantage of a wider dynamic range and direct measurement of flux density, unlike a SQUID which is only capable of sensing flux density changes. When operated at 77K the prototype magnetometer has already demonstrated a sensitivity at least 10 times better than that of a commercial fluxgate magnetometer. The system also appears to provide a simple method for investigation of flux flow in these materials

  17. Harmonic detection of magnetic resonance for sensitivity improvement of optical atomic magnetometers

    Energy Technology Data Exchange (ETDEWEB)

    Ranjbaran, M. [Laser and Plasma Research Institute, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Tehranchi, M.M., E-mail: teranchi@sbu.ac.ir [Laser and Plasma Research Institute, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Physics Department, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Hamidi, S.M. [Laser and Plasma Research Institute, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Khalkhali, S.M.H. [Physics Department, Kharazmi University, Tehran (Iran, Islamic Republic of)

    2017-02-15

    Highly sensitive atomic magnetometers use optically detected magnetic resonance of atomic spins to measure extremely weak magnetic field changes. The magnetometer sensitivity is directly proportional to the ratio of intensity to line-shape of the resonance signal. To obtain narrower resonance signal, we implemented harmonic detection of magnetic resonance method in M{sub x} configuration. The nonlinear spin polarization dynamics in detection of the higher harmonics were employed in phenomenological Bloch equations. The measured and simulated harmonic components of the resonance signals in frequency domain yielded significantly narrower line-width accompanying much improved sensitivity. Our results confirm the sensitivity improvement by a factor of two in optical atomic magnetometer via second harmonic signal which can open a new insight in the weak magnetic field measurement system design. - Highlights: • Highly sensitive atomic magnetometers have been used to measure weak magentic filed. • To obtain narrower resonance signal, we impalnted harmonic detection of magnetic resonance. • The nonlinear spin polarization dynamics in detetion of the higher harmonics were imployed.

  18. Performance Improvement of Inertial Navigation System by Using Magnetometer with Vehicle Dynamic Constraints

    Directory of Open Access Journals (Sweden)

    Daehee Won

    2015-01-01

    Full Text Available A navigation algorithm is proposed to increase the inertial navigation performance of a ground vehicle using magnetic measurements and dynamic constraints. The navigation solutions are estimated based on inertial measurements such as acceleration and angular velocity measurements. To improve the inertial navigation performance, a three-axis magnetometer is used to provide the heading angle, and nonholonomic constraints (NHCs are introduced to increase the correlation between the velocity and the attitude equation. The NHCs provide a velocity feedback to the attitude, which makes the navigation solution more robust. Additionally, an acceleration-based roll and pitch estimation is applied to decrease the drift when the acceleration is within certain boundaries. The magnetometer and NHCs are combined with an extended Kalman filter. An experimental test was conducted to verify the proposed method, and a comprehensive analysis of the performance in terms of the position, velocity, and attitude showed that the navigation performance could be improved by using the magnetometer and NHCs. Moreover, the proposed method could improve the estimation performance for the position, velocity, and attitude without any additional hardware except an inertial sensor and magnetometer. Therefore, this method would be effective for ground vehicles, indoor navigation, mobile robots, vehicle navigation in urban canyons, or navigation in any global navigation satellite system-denied environment.

  19. Validation of the GOES-16 magnetometer using multipoint measurements and magnetic field models

    Science.gov (United States)

    Califf, S.; Loto'aniu, P. T. M.; Redmon, R. J.; Sarris, T. E.; Brito, T.

    2017-12-01

    The Geostationary Operational Environmental Satellites (GOES) have been providing continuous geomagnetic field measurements for over 40 years. While the primary purpose of GOES is operational, the magnetometer data are also widely used in the scientific community. In an effort to validate the recently launched GOES-16 magnetometer, we compare the measurements to existing magnetic field models and other GOES spacecraft currently on orbit. There are four concurrent measurements from GOES-13, 14, 15 and 16 spanning 75W to 135W longitude. Also, GOES-13 is being replaced by GOES-16 in the GOES-East location, and during the transition, GOES-13 and GOES-16 will be parked nearby in order to assist with calibration of the new operational satellite. This work explores techniques to quantify the performance of the GOES-16 magnetometer by comparison to data from nearby spacecraft. We also build on previous work to assimilate in situ measurements with existing magnetic field models to assist in comparing data from different spatial locations. Finally, we use this unique dataset from four simultaneous geosynchronous magnetometer measurements and the close separation between GOES-13 and GOES-16 to study the spatial characteristics of ULF waves and other magnetospheric processes.

  20. MgB2 magnetometer with directly coupled pick-up loop

    NARCIS (Netherlands)

    Portesi, C.; Mijatovic, D.; Veldhuis, Dick; Brinkman, Alexander; Monticone, E.; Gonnelli, R.S.

    2006-01-01

    magnetometer with a directly coupled pick-up loop. We used an all in situ technique for fabricating magnesium diboride films, which consists of the co-evaporation of B and Mg by means of an e-gun and a resistive heater respectively. Consequently, we realized the superconducting device, which

  1. Design Principles of A Sigma-delta Flux-gate Magnetometer

    Science.gov (United States)

    Magnes, W.; Valavanoglou, A.; Pierce, D.; Frank, A.; Schwingenschuh, K.

    A state-of-the-art flux-gate magnetometer is characterised by magnetic field resolution of several pT in a wide frequency range, low power consumption, low weight and high robustness. Therefore, flux-gate magnetometers are frequently used for ground-based Earth's field observation as well as for measurements aboard scientific space missions. But both traditional analogue and recently developed digital flux-gate magnetometers need low power and high-resolution analogue-to-digital converters for signal quan- tization. The disadvantage of such converters is the low radiation hardness. This fact has led to the idea of combining a traditional analogue flux-gate regulation circuit with that of a discretely realized sigma-delta converter in order to get a radiation hard and further miniaturized magnetometer. The name sigma-delta converter is derived from putting an integrator in front of a 1-bit delta modulator which forms the sigma-delta loop. It is followed by a digital decimation filter realized in a field-programmable gate array (FPGA). The flux-gate regulation and the sigma-delta loop are quite similar in the way of realizing the integrator and feedback circuit, which makes it easy to com- bine these two systems. The presented talk deals with the design principles and the results of a first bread board model.

  2. The Future of Ground Magnetometer Arrays in Support of Space Weather Monitoring and Research

    Science.gov (United States)

    Engebretson, Mark; Zesta, Eftyhia

    2017-11-01

    A community workshop was held in Greenbelt, Maryland, on 5-6 May 2016 to discuss recommendations for the future of ground magnetometer array research in space physics. The community reviewed findings contained in the 2016 Geospace Portfolio Review of the Geospace Section of the Division of Atmospheric and Geospace Science of the National Science Foundation and discussed the present state of ground magnetometer arrays and possible pathways for a more optimal, robust, and effective organization and scientific use of these ground arrays. This paper summarizes the report of that workshop to the National Science Foundation (Engebretson & Zesta, as well as conclusions from two follow-up meetings. It describes the current state of U.S.-funded ground magnetometer arrays and summarizes community recommendations for changes in both organizational and funding structures. It also outlines a variety of new and/or augmented regional and global data products and visualizations that can be facilitated by increased collaboration among arrays. Such products will enhance the value of ground-based magnetometer data to the community's effort for understanding of Earth's space environment and space weather effects.

  3. Two-channel recoder for magnetometer with energy-independent mass memory device

    International Nuclear Information System (INIS)

    Korzinin, V.N.; Selivanov, A.M.

    1993-01-01

    The paper describes a two-channel digit-to-analog recorder designed for converting the sequence of pulses from proton magnetometer (MMH-203) outlet; the device enables processing of the pulses and their recording in RAM and on the tape of the analog recorder. The availability of nonvolotile RAM allows to transmit digit information to a computer (BK-0010) for its further processing

  4. A nitrogen triple-point thermal storage unit for cooling a SQUID magnetometer

    NARCIS (Netherlands)

    Rijpma, A.P.; Meenderink, D.J.; Reincke, H.A.; Venhorst, G.C.F.; Holland, H.J.; Brake, ter H.J.M.

    2005-01-01

    In order to achieve turnkey operation, the use is planned of cryocoolers to cool a SQUID magnetometer system. To minimize the magnetical and mech. interference from the coolers, they are switched off during the actual measurements. Consequently, a thermal storage unit (TSU) is required with

  5. A nitrogen triple-point thermal storage unit for cooling a SQUID magnetometer

    NARCIS (Netherlands)

    Rijpma, A.P.; Meenderink, D.J.; Reincke, H.A.; Venhorst, G.C.F.; Venhorst, G.C.F.; Holland, Herman J.; ter Brake, Hermanus J.M.

    2005-01-01

    In order to achieve turnkey operation, we plan to use cryocoolers to cool a SQUID magnetometer system. To minimize the magnetical and mechanical interference from the coolers, we intend to switch them off during the actual measurements. Consequently, a thermal storage unit (TSU) is required with

  6. Characterization and demonstration results of a SQUID magnetometer system developed for geomagnetic field measurements

    Science.gov (United States)

    Kawai, J.; Miyamoto, M.; Kawabata, M.; Nosé, M.; Haruta, Y.; Uehara, G.

    2017-08-01

    We characterized a low temperature superconducting quantum interference device (SQUID) magnetometer system developed for high-sensitivity geomagnetic field measurement, and demonstrated the detection of weak geomagnetic signals. The SQUID magnetometer system is comprised of three-axis SQUID magnetometers housed in a glass fiber reinforced plastic cryostat, readout electronics with flux locked loop (FLL), a 24-bit data logger with a global positioning system and batteries. The system noise was approximately 0.2 pT √Hz- 1/2 in the 1-50 Hz frequency range. This performance was determined by including the thermal noise and the shielding effect of the copper shield, which covered the SQUID magnetometers to eliminate high-frequency interference. The temperature drift of the system was ˜0.8 pT °C- 1 in an FLL operation. The system operated for a month using 33 l liquid helium. Using this system, we performed the measurements of geomagnetic field in the open-air, far away from the city. The system could detect weak geomagnetic signals such as the Schumann resonance with sixth harmonics, and the ionospheric Alfvén resonance appearing at night, for the north-south and east-west components of the geomagnetic field. We confirm that the system was capable of high-sensitivity measurement of the weak geomagnetic activities.

  7. Magnetogate: Using an iPhone Magnetometer for Measuring Kinematic Variables

    Science.gov (United States)

    Temiz, Burak Kagan; Yavuz, Ahmet

    2016-01-01

    This paper presents a method to measure the movement of an object from specific locations on a straight line using an iPhone's magnetometer. In this method, called "magnetogate," an iPhone is placed on a moving object (in this case a toy car) and small neodymium magnets are arranged at equal intervals on one side of a straight line. The…

  8. Backside illuminated CMOS-TDI line scan sensor for space applications

    Science.gov (United States)

    Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

    2018-05-01

    A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

  9. Steganalysis based on JPEG compatibility

    Science.gov (United States)

    Fridrich, Jessica; Goljan, Miroslav; Du, Rui

    2001-11-01

    In this paper, we introduce a new forensic tool that can reliably detect modifications in digital images, such as distortion due to steganography and watermarking, in images that were originally stored in the JPEG format. The JPEG compression leave unique fingerprints and serves as a fragile watermark enabling us to detect changes as small as modifying the LSB of one randomly chosen pixel. The detection of changes is based on investigating the compatibility of 8x8 blocks of pixels with JPEG compression with a given quantization matrix. The proposed steganalytic method is applicable to virtually all steganongraphic and watermarking algorithms with the exception of those that embed message bits into the quantized JPEG DCT coefficients. The method can also be used to estimate the size of the secret message and identify the pixels that carry message bits. As a consequence of our steganalysis, we strongly recommend avoiding using images that have been originally stored in the JPEG format as cover-images for spatial-domain steganography.

  10. Constitutional compatibility of energy systems

    International Nuclear Information System (INIS)

    Rossnagel, A.

    1983-01-01

    The paper starts from the results of the Enquiry Commission on 'Future Nuclear Energy Policy' of the 8th Federal German Parliament outlining technically feasible energy futures in four 'pathways'. For the purpose of the project, which was to establish the comparative advantages and disadvantages of different energy systems, these four scenarios were reduced to two alternatives: cases K (= nuclear energy) and S (= solar energy). The question to Ge put is: Which changes within our legal system will be ushered in by certain technological developments and how do these changes relate to the legal condition intended so far. Proceeding in this manner will not lead to the result of a nuclear energy system or a solar energy system being in conformity or in contradiction with the constitutional law, but will provide a catalogue of implications orientated to the aims of legal standards: a person deciding in favour of a nuclear energy system or a solar energy system supports this or that development of constitutional policy, and a person purishing this or that aim of legal policy should be consistent and decide in favour of this or that energy system. The investigation of constitutional compatibility leads to the question what effects different energy systems will have on the forms of political intercourse laid down in the constitutional law, which are orientated to models of a liberal constitutional tradition of citizens. (orig./HSCH) [de

  11. 77 FR 26787 - Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint...

    Science.gov (United States)

    2012-05-07

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2895] Certain CMOS Image Sensors and Products.... International Trade Commission has received a complaint entitled Certain CMOS Image Sensors and Products... importation, and the sale within the United States after importation of certain CMOS image sensors and...

  12. Avalanche-mode silicon LEDs for monolithic optical coupling in CMOS technology

    NARCIS (Netherlands)

    Dutta, Satadal

    2017-01-01

    Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit (IC) technology is the most commercially successful platform in modern electronic and control systems. So called "smart power" technologies such as Bipolar CMOS DMOS (BCD), combine the computational power of CMOS with high voltage

  13. A game-theoretic approach for calibration of low-cost magnetometers under noise uncertainty

    Science.gov (United States)

    Siddharth, S.; Ali, A. S.; El-Sheimy, N.; Goodall, C. L.; Syed, Z. F.

    2012-02-01

    Pedestrian heading estimation is a fundamental challenge in Global Navigation Satellite System (GNSS)-denied environments. Additionally, the heading observability considerably degrades in low-speed mode of operation (e.g. walking), making this problem even more challenging. The goal of this work is to improve the heading solution when hand-held personal/portable devices, such as cell phones, are used for positioning and to improve the heading estimation in GNSS-denied signal environments. Most smart phones are now equipped with self-contained, low cost, small size and power-efficient sensors, such as magnetometers, gyroscopes and accelerometers. A magnetometer needs calibration before it can be properly employed for navigation purposes. Magnetometers play an important role in absolute heading estimation and are embedded in many smart phones. Before the users navigate with the phone, a calibration is invoked to ensure an improved signal quality. This signal is used later in the heading estimation. In most of the magnetometer-calibration approaches, the motion modes are seldom described to achieve a robust calibration. Also, suitable calibration approaches fail to discuss the stopping criteria for calibration. In this paper, the following three topics are discussed in detail that are important to achieve proper magnetometer-calibration results and in turn the most robust heading solution for the user while taking care of the device misalignment with respect to the user: (a) game-theoretic concepts to attain better filter parameter tuning and robustness in noise uncertainty, (b) best maneuvers with focus on 3D and 2D motion modes and related challenges and (c) investigation of the calibration termination criteria leveraging the calibration robustness and efficiency.

  14. A game-theoretic approach for calibration of low-cost magnetometers under noise uncertainty

    International Nuclear Information System (INIS)

    Siddharth, S; Ali, A S; El-Sheimy, N; Goodall, C L; Syed, Z F

    2012-01-01

    Pedestrian heading estimation is a fundamental challenge in Global Navigation Satellite System (GNSS)-denied environments. Additionally, the heading observability considerably degrades in low-speed mode of operation (e.g. walking), making this problem even more challenging. The goal of this work is to improve the heading solution when hand-held personal/portable devices, such as cell phones, are used for positioning and to improve the heading estimation in GNSS-denied signal environments. Most smart phones are now equipped with self-contained, low cost, small size and power-efficient sensors, such as magnetometers, gyroscopes and accelerometers. A magnetometer needs calibration before it can be properly employed for navigation purposes. Magnetometers play an important role in absolute heading estimation and are embedded in many smart phones. Before the users navigate with the phone, a calibration is invoked to ensure an improved signal quality. This signal is used later in the heading estimation. In most of the magnetometer-calibration approaches, the motion modes are seldom described to achieve a robust calibration. Also, suitable calibration approaches fail to discuss the stopping criteria for calibration. In this paper, the following three topics are discussed in detail that are important to achieve proper magnetometer-calibration results and in turn the most robust heading solution for the user while taking care of the device misalignment with respect to the user: (a) game-theoretic concepts to attain better filter parameter tuning and robustness in noise uncertainty, (b) best maneuvers with focus on 3D and 2D motion modes and related challenges and (c) investigation of the calibration termination criteria leveraging the calibration robustness and efficiency. (paper)

  15. Small Pixel Hybrid CMOS X-ray Detectors

    Science.gov (United States)

    Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

    2018-01-01

    Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

  16. Low-voltage CMOS operational amplifiers theory, design and implementation

    CERN Document Server

    Sakurai, Satoshi

    1995-01-01

    Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

  17. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Science.gov (United States)

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-01-01

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

  18. High-speed nonvolatile CMOS/MNOS RAM

    International Nuclear Information System (INIS)

    Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

    1979-01-01

    A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

  19. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Directory of Open Access Journals (Sweden)

    Fangming Deng

    2014-05-01

    Full Text Available This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  20. A CMOS humidity sensor for passive RFID sensing applications.

    Science.gov (United States)

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-05-16

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  1. VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications

    Science.gov (United States)

    Arcamone, Julien; Dupré, Cécilia; Arndt, Grégory; Colinet, Eric; Hentz, Sébastien; Ollier, Eric; Duraffourg, Laurent

    2014-10-01

    This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association.

  2. E-Beam Effects on CMOS Active Pixel Sensors

    International Nuclear Information System (INIS)

    Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

    2011-01-01

    Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

  3. Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

    Science.gov (United States)

    Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-29

    Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

  4. An introduction to deep submicron CMOS for vertex applications

    CERN Document Server

    Campbell, M; Cantatore, E; Faccio, F; Heijne, Erik H M; Jarron, P; Santiard, Jean-Claude; Snoeys, W; Wyllie, K

    2001-01-01

    Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.

  5. CMOS voltage references an analytical and practical perspective

    CERN Document Server

    Kok, Chi-Wah

    2013-01-01

    A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

  6. A 205GHz Amplifier in 90nm CMOS Technology

    Science.gov (United States)

    2017-03-01

    10.5dB power gain, Psat of -1.6dBm, and P1dB ≈ -5.8dBm in a standard 90nm CMOS process. Moreover, the design employs internal (layout-based) /external...other advantages, such as low- cost , reliability, and mixed-mode analog/digital chips, intensifying its usage in the mm-wave band [5]. CMOS has several... disadvantages at the higher frequency range with the worst case scenario happening when the device operates near its fmax. This is chiefly due to

  7. Single-chip RF communications systems in CMOS

    DEFF Research Database (Denmark)

    Olesen, Ole

    1997-01-01

    The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone.......The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

  8. Large Format CMOS-based Detectors for Diffraction Studies

    Science.gov (United States)

    Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

    2013-03-01

    Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

  9. Two CMOS BGR using CM and DTMOST techniques

    International Nuclear Information System (INIS)

    Mohd-Yasin, F.; Teh, Y.K.; Choong, F.; Reaz, M.B.I.

    2009-06-01

    Two CMOS BGR using current mode (0.044mm 2 ) and Dynamic Threshold MOST (0.017mm 2 ) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating V DD 1.28V at 25 o C; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support V DD range up to 4V required by passive UHF RFID. (author)

  10. Large Format CMOS-based Detectors for Diffraction Studies

    International Nuclear Information System (INIS)

    Thompson, A C; Westbrook, E M; Nix, J C; Achterkirchen, T G

    2013-01-01

    Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

  11. Linear CMOS RF power amplifiers a complete design workflow

    CERN Document Server

    Ruiz, Hector Solar

    2013-01-01

    The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

  12. CMOS sigma-delta converters practical design guide

    CERN Document Server

    De la Rosa, Jose M

    2013-01-01

    A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations - going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues - from high-level behavioural modelling i

  13. Tank Farm Waste Transfer Compatibility Program

    International Nuclear Information System (INIS)

    FOWLER, K.D.

    2001-01-01

    The compatibility program described in this document formalizes the process for determining waste compatibility. The primary goal of the program is to ensure that sufficient controls are in place to prevent the formation of incompatible mixtures during future operations. The process described involves characterizing waste, comparing characteristics with criteria, resolving potential incompatibilities and documenting the process

  14. Common Fixed Points for Weakly Compatible Maps

    Indian Academy of Sciences (India)

    The purpose of this paper is to prove a common fixed point theorem, from the class of compatible continuous maps to a larger class of maps having weakly compatible maps without appeal to continuity, which generalized the results of Jungck [3], Fisher [1], Kang and Kim [8], Jachymski [2], and Rhoades [9].

  15. New Commitment Options: Compatibility with Emissions Trading

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    This paper considers different options for quantitative greenhouse gas emission commitments from the standpoint of their technical compatibility with emissions trading. These are dynamic targets, binding targets with price caps, non-binding targets, sector-wide targets/mechanisms, action targets, allowances and endowments, and long-term permits. This paper considers these options from the standpoint of their compatibility with emissions trading.

  16. Is Religious Education Compatible with Science Education?

    Science.gov (United States)

    Mahner, Martin; Bunge, Mario

    1996-01-01

    Addresses the problem of the compatibility of science and religion, and its bearing on science and religious education, challenges the popular view that science and religion are compatible or complementary. Discusses differences at the doctrinal, metaphysical, methodological, and attitudinal levels. Argues that religious education should be kept…

  17. 9 CFR 3.7 - Compatible grouping.

    Science.gov (United States)

    2010-01-01

    ... 9 Animals and Animal Products 1 2010-01-01 2010-01-01 false Compatible grouping. 3.7 Section 3.7... Cats 1 Animal Health and Husbandry Standards § 3.7 Compatible grouping. Dogs and cats that are housed...; (c) Puppies or kittens 4 months of age or less may not be housed in the same primary enclosure with...

  18. Mycelial compatibility groups and pathogenicity of Sclerotinia ...

    African Journals Online (AJOL)

    ... was determined by mycelial compatibility grouping (MCG) and isolate aggressiveness comparisons. MCG, host specificity and aggressiveness of S. sclerotiorum isolates were assessed. Isolate pairs were designated compatible when no barrage zone formed at sites of contact. They were designated incompatible when a ...

  19. Tank Farm Waste Transfer Compatibility Program

    International Nuclear Information System (INIS)

    FOWLER, K.D.

    2000-01-01

    The compatibility program described in this document formalizes the process for determining waste compatibility. The primary goal of the program is to ensure that sufficient controls are in place to prevent the formation of incompatible mixtures during future operations. The process described involves characterizing waste, comparing characteristics with criteria, resolving potential incompatibilities and documenting the process

  20. Single-chip ring resonator-based 1 x 8 optical beam forming network in CMOS-compatible waveguide technology

    NARCIS (Netherlands)

    Zhuang, L.; Roeloffzen, C.G.H.; Heideman, Rene; Borreman, A.; Meijerink, Arjan; van Etten, Wim

    2007-01-01

    Optical ring resonators (ORRs) are good candidates to provide continuously tunable delay in optical beam forming networks (OBFNs) for phased array antenna systems. Delay and splitting/combining elements can be integrated on a single optical chip to form an OBFN. A state-of-the-art ring resonator-