WorldWideScience

Sample records for cmos compatible magnetometers

  1. Batch Processing of CMOS Compatible Feedthroughs

    DEFF Research Database (Denmark)

    Rasmussen, F.E.; Heschel, M.; Hansen, Ole

    2003-01-01

    This paper presents a technique for batch fabrication of electrical feedthroughs in CMOS wafers. The presented process is designed with specific attention on industrial applicability. The electrical feedthroughs are processed entirely by low temperature, CMOS compatible processes. Hence, the proc......This paper presents a technique for batch fabrication of electrical feedthroughs in CMOS wafers. The presented process is designed with specific attention on industrial applicability. The electrical feedthroughs are processed entirely by low temperature, CMOS compatible processes. Hence....... The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...

  2. CMOS Compatible Ultra-Compact Modulator

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.

    2014-01-01

    A planar layout for an ultra-compact plasmonic modulator is proposed and numerically investigated. Our device utilizes potentially CMOS compatible materials and can achieve 3-dB modulation in just 65nm and insertion loss <1dB at telecommunication wavelengths.......A planar layout for an ultra-compact plasmonic modulator is proposed and numerically investigated. Our device utilizes potentially CMOS compatible materials and can achieve 3-dB modulation in just 65nm and insertion loss

  3. Plasmonic Modulator Using CMOS Compatible Material Platform

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.;

    2014-01-01

    In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device l ayout utilizes alternative plas monic materials such as tr ansparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation...

  4. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  5. Fully CMOS-compatible titanium nitride nanoantennas

    Science.gov (United States)

    Briggs, Justin A.; Naik, Gururaj V.; Petach, Trevor A.; Baum, Brian K.; Goldhaber-Gordon, David; Dionne, Jennifer A.

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  6. CMOS compatible nanoscale nonvolatile resistance switching memory.

    Science.gov (United States)

    Jo, Sung Hyun; Lu, Wei

    2008-02-01

    We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed (5 ns), high on/off ratio (10(3)), long endurance (10(6)), retention time (5 months), and multibit capability. These key performance metrics compare favorably with other emerging nonvolatile memory techniques. Furthermore, both diode-like (rectifying) and resistor-like (nonrectifying) behaviors can be obtained in the device switching characteristics in a controlled fashion. These results suggest that the CMOS compatible, nanoscale Si-based resistance switching devices may be well suited for ultrahigh-density memory applications.

  7. CMOS-compatible spintronic devices: a review

    Science.gov (United States)

    Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

    2016-11-01

    For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

  8. CMOS-compatible LVOF-based visible microspectrometer

    NARCIS (Netherlands)

    Emadi, A.; Wu, H.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    This paper reports on a CMOS-Compatible Linear Variable Optical Filter (LVOF) visible micro-spectrometer. The CMOS-compatible post process for fabrication of the LVOF has been used for integration of the LVOF with a CMOS chip containing a 128-element photodiode array and readout circuitry. Fabricati

  9. CMOS-compatible photonic devices for single-photon generation

    Directory of Open Access Journals (Sweden)

    Xiong Chunle

    2016-09-01

    Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  10. CMOS-compatible photonic devices for single-photon generation

    Science.gov (United States)

    Xiong, Chunle; Bell, Bryn; Eggleton, Benjamin J.

    2016-09-01

    Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal-oxide-semiconductor (CMOS)-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon) and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  11. Monolithic CMOS-compatible zero-index metamaterials

    CERN Document Server

    Vulis, Daryl I; Reshef, Orad; Camayd-Muñoz, Philip; Yin, Mei; Kita, Shota; Lončar, Marko; Mazur, Eric

    2016-01-01

    Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This design is achieved through a Dirac-cone dispersion. The metamaterial is entirely composed of silicon and offers compatibility through low-aspect-ratio structures that can be simply fabricated in a standard device layer. This platform enables mass adoption and exploration of zero-index-based photonic devices at low cost and high fidelity.

  12. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    KAUST Repository

    Saffih, Faycal

    2012-06-01

    In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

  13. New CMOS Compatible Platforms for Integrated Nonlinear Optical Signal Processing

    CERN Document Server

    Moss, D J

    2014-01-01

    Nonlinear photonic chips have succeeded in generating and processing signals all-optically with performance far superior to that possible electronically - particularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics, its high two-photon absorption at telecommunications wavelengths poses a fundamental limitation. This paper reviews some of the recent achievements in CMOS-compatible platforms for nonlinear optics, focusing on amorphous silicon and Hydex glass, highlighting their potential future impact as well as the challenges to achieving practical solutions for many key applications. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation and ultrafast optical pulse generation and measurement.

  14. Spectral_Engineering_with_CMOS_compatible_SOI_Photonic_Molecules

    CERN Document Server

    Barea, Luis A M; de Rezende, Guilherme F M; Frateschi, Newton C

    2013-01-01

    Photonic systems based on microring resonators have a fundamental constrain given by the strict relationship among free spectral range (FSR), total quality factor (QT) and resonator size, intrinsically making filter spacing, photonic lifetime and footprint interdependent. Here we break this paradigm employing CMOS compatible Silicon-on-Insulator (SOI) photonic molecules based on coupled multiple ring resonators. The resonance wavelengths and their respective linewidths are controlled by the hybridization of the quasi-orthogonal photonic states. We demonstrate photonic molecules with doublet and triplet resonances with spectral spliting only achievable with single rings orders of magnitude larger in foot print. Besides, these splitting are potentially controllable based on the coupling (bonds) between resonators. Finally, the spatial distribution of the hybrid states allows up to sevenfold QT enhancement.

  15. MAGNETOMETER

    Science.gov (United States)

    Leavitt, M.A.

    1958-11-18

    A magnetometer ls described, partlcularly to a device which accurately indicates the polarity and intensity of a magnetlc field. The main feature of the invention is a unique probe construction in combinatlon wlth a magnetic fleld detector system. The probe comprises two coils connected in series opposition for energization with an a-c voltage. The voltage lnduced in a third coll on the probe, a pick-up coil, is distorted by the presence of an external field to produce even harmonic voltages. A controlled d-c current is passed through the energized coils to counter the dlstortlon and reduce tbe even harmonic content to a null. When the null point is reached, the d-c current is a measure of the external magnetic field strength, and the phase of the pickup coil voltage indicates tbe field polarlty.

  16. Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility

    OpenAIRE

    2012-01-01

    Deep trench gate is used for latest IGBT to improve device performance. By large difference from deep submicron CMOS structure, there is no process compatibility among CMOS device and trench gate IGBT. We propose IGBT scaling rule for shrinking IGBT cell structure both horizontally and vertically. The scaling rule is theoretically delivered by structure based equations. Device performance improvement was also predicted by TCAD simulations even with very shallow trench gate. The rule enables t...

  17. IGBT Scaling Principle Toward CMOS Compatible Wafer Processes

    OpenAIRE

    2012-01-01

    A scaling principle for trench gate IGBT is proposed. CMOS technology on large diameter wafer enables to produce various digital circuits with higher performance and lower cost. The transistor cell structure becomes laterally smaller and smaller and vertically shallower and shallower. In contrast, latest IGBTs have rather deeper trench structure to obtain lower on-state voltage drop and turn-off loss. In the aspect of the process uniformity and wafer warpage, manufacturing such structure in t...

  18. A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

    Institute of Scientific and Technical Information of China (English)

    Li Chen; Liao Huai-Lin; Huang Ru; Wang Yang-Yuan

    2008-01-01

    In this paper, a complementary metal-oxide semiconductor (CMOS)-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon (SGPS) trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications.

  19. CMOS-compatible PureGaB Ge-on-Si APD pixel arrays

    NARCIS (Netherlands)

    Sammak, Amir; Aminian, Mahdi; Nanver, Lis Karen; Charbon, Edoardo

    2016-01-01

    Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pixels with each a size of 26 × 2

  20. Design and Fabrication of a Monolithic Optoelectronic Integrated Circuit Chip Based on CMOS Compatible Technology

    Institute of Scientific and Technical Information of China (English)

    GUO Wei-Feng; ZHAO Yong; WANG Wan-Jun; SHAO Hai-Feng; YANG Jian-Yi; JIANG Xiao-Qing

    2012-01-01

    A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology.The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function.Test results show that the extinction ratio of the MZM is close to 20dB and the small-signal gain of the CMOS driving circuit is about 26.9dB.A 50m V 10 MHz sine wave signal is amplified by the driving circuit,and then drives the MZM successfully.%A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology. The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function. Test results show that the extinction ratio of the MZM is close to 20 dB and the small-signal gain of the CMOS driving circuit is about 26.9dB. A 50mV 10MHz sine wave signal is amplified by the driving circuit, and then drives the MZM successfully.

  1. CMOS-compatible fabrication of metamaterial-based absorbers for the mid-IR spectral range

    Science.gov (United States)

    Karimi Shahmarvandi, Ehsan; Ghaderi, Mohammadamir; Wolffenbuttel, Reinoud F.

    2016-10-01

    A CMOS-compatible approach is presented for the fabrication of a wideband mid-IR metamaterial-based absorber on top of a Si3N4 membrane, which contains poly-Si thermopiles. The application is in IR microspectrometers that are intended for implementation in portable microsystem for use in absorption spectroscopy. Although Au is the conventional material of choice, we demonstrate by simulation that near-perfect absorption can be achieved over a wider band when using the more CMOS-compatible Al. The absorber design is based on Al disk resonators and an Al backplane, which are separated by a SiO2 layer. The fabrication process involves the deposition of Al and SiO2 layers on top of a Si3N4 membrane, lithography and a lift-off process for patterning of the top Al layer.

  2. Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

    Science.gov (United States)

    Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

    2013-05-20

    We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

  3. Experimental demonstration of CMOS-compatible long-range dielectric-loaded surface plasmon-polariton waveguides (LR-DLSPPWs)

    DEFF Research Database (Denmark)

    Zektzer, R.; Desiatov, B.; Mazurski, N.;

    2014-01-01

    We demonstrate the design, fabrication and experimental characterization of long-range dielectric-loaded surface plasmon-polariton waveguides (LR-DLSPPWs) that are compatible with complementary metal-oxide semiconductor (CMOS) technology. The demonstrated waveguide configuration represents...

  4. Enhancement in open-circuit voltage of implantable CMOS-compatible glucose fuel cell by improving the anodic catalyst

    Science.gov (United States)

    Niitsu, Kiichi; Ando, Takashi; Kobayashi, Atsuki; Nakazato, Kazuo

    2017-01-01

    This paper presents an implantable CMOS-compatible glucose fuel cell that generates an open-circuit voltage (OCV) of 880 mV. The developed fuel cell is solid-catalyst-based and manufactured from biocompatible materials; thus, it can be implanted to the human body. Additionally, since the cell can be manufactured using a semiconductor (CMOS) fabrication process, it can also be manufactured together with CMOS circuits on a single silicon wafer. In the literature, an implantable CMOS-compatible glucose fuel cell has been reported. However, its OCV is 192 mV, which is insufficient for CMOS circuit operation. In this work, we have enhanced the performance of the fuel cell by improving the electrocatalytic ability of the anode. The prototype with the newly proposed Pt/carbon nanotube (CNT) anode structure successfully achieved an OCV of 880 mV, which is the highest ever reported.

  5. CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide.

    Science.gov (United States)

    Djordjevic, Stevan S; Shang, Kuanping; Guan, Binbin; Cheung, Stanley T S; Liao, Ling; Basak, Juthika; Liu, Hai-Feng; Yoo, S J B

    2013-06-17

    We present the design, fabrication and characterization of athermal nano-photonic silicon ring modulators. The athermalization method employs compensation of the silicon core thermo-optic contribution with that from the amorphous titanium dioxide (a-TiO(2)) overcladding with a negative thermo-optic coefficient. We developed a new CMOS-compatible fabrication process involving low temperature RF magnetron sputtering of high-density and low-loss a-TiO(2) that can withstand subsequent elevated-temperature CMOS processes. Silicon ring resonators with 275 nm wide rib waveguide clad with a-TiO(2) showed near complete athermalization and moderate optical losses. Small-signal testing of the micro-resonator modulators showed high extinction ratio and gigahertz bandwidth.

  6. Electroabsorption modulators for CMOS compatible optical interconnects in III-V and group IV materials

    Science.gov (United States)

    Roth, Jonathan Edgar

    device is compatible with both the voltage swing of modern CMOS circuits, and long-distance telecommunications technologies including low-loss optical fiber and erbium-doped fiber amplifiers.

  7. A new laterally conductive bridge random access memory by fully CMOS logic compatible process

    Science.gov (United States)

    Hsieh, Min-Che; Chin, Yung-Wen; Lin, Yu-Cheng; Chih, Yu-Der; Tsai, Kan-Hsueh; Tsai, Ming-Jinn; King, Ya-Chin; Lin, Chrong Jung

    2014-01-01

    This paper proposes a novel laterally conductive bridge random access memory (L-CBRAM) module using a fully CMOS logic compatible process. A contact buffer layer between the poly-Si and contact plug enables the lateral Ti-based atomic layer to provide on/off resistance ratio via bipolar operations. The proposed device reached more than 100 pulse cycles with an on/off ratio over 10 and very stable data retention under high temperature operations. These results make this Ti-based L-CBRAM cell a promising solution for advanced embedded multi-time programmable (MTP) memory applications.

  8. CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

    Science.gov (United States)

    Varlamava, Volha; De Amicis, Giovanni; Del Monte, Andrea; Perticaroli, Stefano; Rao, Rosario; Palma, Fabrizio

    2016-08-01

    In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP.

  9. CMOS-compatible fabrication, micromachining, and bonding strategies for silicon photonics

    Science.gov (United States)

    Heck, John; Jones, Richard; Paniccia, Mario J.

    2011-02-01

    The adoption of optical technologies by high-volume consumer markets is severely limited by the cost and complexity of manufacturing complete optical transceiver systems. This is in large part because "boutique" semiconductor fabrication processes are required for III-V lasers, modulators, and photodetectors; furthermore, precision bonding and painstaking assembly are needed to integrate or assemble such dissimilar devices and materials together. On the other hand, 200mm and 300mm silicon process technology has been bringing ever-increasing computing power to the masses by relentless cost reduction for several decades. Intel's silicon photonics program aims to marry this CMOS infrastructure and recent developments in MEMS manufacturing with the burgeoning field of microphotonics to make low cost, high-speed optical links ubiquitous. In this paper, we will provide an overview of several aspects of silicon photonics technology development in a CMOS fabrication line. First, we will describe fabrication strategies from the MEMS industry for micromachining silicon to create passive optical devices such as mirrors, waveguides, and facets, as well as alignment features. Second, we will discuss some of the challenges of fabricating hybrid III-V lasers on silicon, including such aspects as hybrid integration of InP-based materials with silicon using various bonding methods, etching of InP films, and contact formation using CMOS-compatible metals.

  10. CMOS-Compatible Silicon-Nanowire-Based Coulter Counter for Cell Enumeration.

    Science.gov (United States)

    Chen, Yu; Guo, Jinhong; Muhammad, Hamidullah; Kang, Yuejun; Ary, Sunil K

    2016-02-01

    A silicon-nanowire-based Coulter counter has been designed and fabricated for particle/cell enumeration. The silicon nanowire was fabricated in a fully complementary metal-oxide-semiconductor (CMOS)-compatible process and used as a field effect transistor (FET) device. The Coulter counter device worked on the principle of potential change detection introduced by the passing of microparticles/cells through a sensing channel. Device uniformity was confirmed by scanning electron microscopy and transmission electron microscopy. Current-voltage measurement showed the high sensitivity of the nanowire FET device to the surface potential change. The results revealed that the silicon-nanowire-based Coulter counter can differentiate polystyrene beads with diameters of 8 and 15 μm. Michigan Cancer Foundation-7 (MCF-7) cells have been successfully counted to validate the device. A fully CMOS-compatible fabrication process can help the device integration and facilitate the development of sensor arrays for high throughput application. With appropriate sample preparation steps, it is also possible to expand the work to applications such as rare-cells detection.

  11. Room temperature lasing in GeSn alloys: A path to CMOS-compatible infrared lasers

    Science.gov (United States)

    Li, Zairui; Zhao, Yun; Gallagher, James; Menéndez, José; Kouvetakis, John; Agha, Imad; Mathews, Jay

    The semiconductor industry has been pushing silicon photonics development for many years, resulting in the realization of many CMOS-compatible optoelectronic devices. However, one challenge that has not been overcome is the development of Si-based lasers. Recently, GeSn alloys grown on Si have shown much promise in the field of infrared optoelectronics. These alloy films are compatible with CMOS processing, have band gaps in the infrared, and the band structure of GeSn can be tuned via Sn concentration to induce direct band gap emission. In this work, we report on room temperature lasing in optically-pumped waveguides fabricated from GeSn films grown epitaxially on Si(100) substrates. The waveguides were defined using standard UV photolithography and dry-etched in a Cl plasma. The end facets were mirror polished, and Al was deposited on one facet to enhance cavity quality. The waveguides were optically-pumped using a 976nm wavelength solid-state laser, and the corresponding emission was measured. The dependence of the emission power on the pump power shows a clear transition between spontaneous and stimulated emission, thereby demonstrating room temperature lasing.

  12. Optical modulation techniques for analog signal processing and CMOS compatible electro-optic modulation

    Science.gov (United States)

    Gill, Douglas M.; Rasras, Mahmoud; Tu, Kun-Yii; Chen, Young-Kai; White, Alice E.; Patel, Sanjay S.; Carothers, Daniel; Pomerene, Andrew; Kamocsai, Robert; Beattie, James; Kopa, Anthony; Apsel, Alyssa; Beals, Mark; Mitchel, Jurgen; Liu, Jifeng; Kimerling, Lionel C.

    2008-02-01

    Integrating electronic and photonic functions onto a single silicon-based chip using techniques compatible with mass-production CMOS electronics will enable new design paradigms for existing system architectures and open new opportunities for electro-optic applications with the potential to dramatically change the management, cost, footprint, weight, and power consumption of today's communication systems. While broadband analog system applications represent a smaller volume market than that for digital data transmission, there are significant deployments of analog electro-optic systems for commercial and military applications. Broadband linear modulation is a critical building block in optical analog signal processing and also could have significant applications in digital communication systems. Recently, broadband electro-optic modulators on a silicon platform have been demonstrated based on the plasma dispersion effect. The use of the plasma dispersion effect within a CMOS compatible waveguide creates new challenges and opportunities for analog signal processing since the index and propagation loss change within the waveguide during modulation. We will review the current status of silicon-based electrooptic modulators and also linearization techniques for optical modulation.

  13. Post-CMOS compatible high-throughput fabrication of AlN-based piezoelectric microcantilevers

    Science.gov (United States)

    Pérez-Campos, A.; Iriarte, G. F.; Hernando-Garcia, J.; Calle, F.

    2015-02-01

    A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoelectric cantilevers has been developed. The fabrication process is suitable for standard silicon technology and provides low-cost and high-throughput manufacturing. This work reports design, fabrication and characterization of piezoelectric cantilevers based on aluminum nitride (AlN) thin films synthesized at room temperature. The proposed microcantilever system is a sandwich structure composed of chromium (Cr) electrodes and a sputtered AlN film. The key issue for cantilever fabrication is the growth at room temperature of the AlN layer by reactive sputtering, making possible the innovative compatibility of piezoelectric MEMS devices with CMOS circuits already processed. AlN and Cr have been etched by inductively coupled plasma (ICP) dry etching using a BCl3-Cl2-Ar plasma chemistry. As part of the novelty of the post-CMOS micromachining process presented here, a silicon Si (1 0 0) wafer has been used as substrate as well as the sacrificial layer used to release the microcantilevers. In order to achieve this, the Si surface underneath the structure has been wet etched using an HNA (hydrofluoric acid + nitric acid + acetic acid) based solution. X-ray diffraction (XRD) characterization indicated the high crystalline quality of the AlN film. An atomic force microscope (AFM) has been used to determine the Cr electrode surface roughness. The morphology of the fabricated devices has been studied by scanning electron microscope (SEM). The cantilevers have been piezoelectrically actuated and their out-of-plane vibration modes were detected by vibrometry.

  14. CMOS Compatible 3-Axis Magnetic Field Sensor using Hall Effect Sensing

    Science.gov (United States)

    Locke, Joshua R.

    The purpose of this study is to design, fabricate and test a CMOS compatible 3-axis Hall effect sensor capable of detecting the earth's magnetic field, with strength's of ˜50 muT. Preliminary testing of N-well Van Der Pauw structures using strong neodymium magnets showed proof of concept for hall voltage sensing, however, poor geometry of the structures led to a high offset voltage. A 1-axis Hall effect sensor was designed, fabricated and tested with a sensitivity of 1.12x10-3 mV/Gauss using the RIT metal gate PMOS process. Poor geometry and insufficient design produced an offset voltage of 0.1238 volts in the 1-axis design; prevented sensing of the earth's magnetic field. The new design features improved geometry for sensing application, improved sensitivity and use the RIT sub-CMOS process. The completed 2-axis device showed an average sensitivity to large magnetic fields of 0.0258 muV/Gauss at 10 mA supply current.

  15. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.

    2014-08-01

    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  16. Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process

    CERN Document Server

    Sukhdeo, David S; Gupta, Shashank; Kim, Daeik; Woo, Sungdae; Kim, Youngmin; Vuckovic, Jelena; Saraswat, Krishna C; Nam, Donguk

    2015-01-01

    We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk is compensated by depositing compressively stressed silicon nitride layer. Two-dimensional Raman spectroscopy measurements along with finite-element method simulations confirm a relatively homogeneous strain distribution within the final microdisk structure. Photoluminescence results show clear optical resonances due to whispering gallery modes which are in good agreement with finite-difference time-domain optical simulations. Our bandgap-customizable microdisks present a new route towards an efficient germanium light source for on-chip optical interconnects.

  17. Nonlinear enhancement in photonic crystal slow light waveguides fabricated using CMOS-compatible process.

    Science.gov (United States)

    Shinkawa, Mizuki; Ishikura, Norihiro; Hama, Yosuke; Suzuki, Keijiro; Baba, Toshihiko

    2011-10-24

    We have studied low-dispersion slow light and its nonlinear enhancement in photonic crystal waveguides. In this work, we fabricated the waveguides using Si CMOS-compatible process. It enables us to integrate spotsize converters, which greatly simplifies the optical coupling from fibers as well as demonstration of the nonlinear enhancement. Two-photon absorption, self-phase modulation and four-wave mixing were observed clearly for picosecond pulses in a 200-μm-long device. In comparison with Si wire waveguides, a 60-120 fold higher nonlinearity was evaluated for a group index of 51. Unique intensity response also occurred due to the specific transmission spectrum and enhanced nonlinearities. Such slow light may add various functionalities in Si photonics, while loss reduction is desired for ensuring the advantage of slow light.

  18. Towards parallel, CMOS-compatible fabrication of carbon nanotube single electron transistors

    Science.gov (United States)

    Islam, Muhammad; Joung, Daeha; Khondaker, Saiful

    2014-03-01

    We demonstrate an approach for the parallel fabrication of single electron transistor (SET) using single-walled carbon nanotube (SWNT). The approach is based on the integration of individual SWNT via dielectrophoresis (DEP) and deposition of metal top contact. We fabricate SWNT devices with a channel length of 100 nm and study their electron transport properties. We observe a connection between the SET performance and room temperature resistance (RT) of the devices. Majority (90%) of the devices with 100 K Ω high RT (>1M Ω) , devices show multiple QD behaviors, while QD was not formed for low RT (CMOS-compatible fabrication process will provide a much desired insight towards the wide spread application and commercialization of SWNT SET devices.

  19. Development of a CMOS-compatible PCR chip: comparison of design and system strategies

    Science.gov (United States)

    Erill, Ivan; Campoy, Susana; Rus, José; Fonseca, Luis; Ivorra, Antoni; Navarro, Zenón; Plaza, José A.; Aguiló, Jordi; Barbé, Jordi

    2004-11-01

    In the last decade research in chips for DNA amplification through the polymerase chain reaction (PCR) has been relatively abundant, but has taken very diverse approaches, leaving little common ground for a straightforward comparison of results. Here we report the development of a line of PCR chips that is fully compatible with complementary-metal-oxide-semiconductor (CMOS) technology and its revealing use as a general platform to test and compare a wide range of experimental parameters involved in PCR-chip design and operation. Peltier-heated and polysilicon thin-film driven PCR chips have been produced and directly compared in terms of efficiency, speed and power consumption, showing that thin-film systems run faster and more efficiently than Peltier-based ones, but yield inferior PCR products. Serpentine-like chamber designs have also been compared with standard rectangular designs and with the here reported rhomboidal chamber shape, showing that serpentine-like chambers do not have detrimental effects in PCR efficiency when using non-flow-through schemes, and that chamber design has a strong impact on sample insertion/extraction yields. With an accurate temperature control (±0.2 °C) we have optimized reaction kinetics to yield sound PCR amplifications of 25 µl mixtures in 20 min and with 24.4 s cycle times, confirming that a titrated amount of bovine albumin serum (BSA, 2.5 µg µl-1) is essential to counteract polymerase adsorption at chip walls. The reported use of a CMOS-compatible technological process paves the way for an easy adaption to foundry requirements and for a scalable integration of electro-optic detection and control circuitry.

  20. Microfluidic-optical integrated CMOS compatible devices for label-free biochemical sensing

    Science.gov (United States)

    Blanco, F. J.; Agirregabiria, M.; Berganzo, J.; Mayora, K.; Elizalde, J.; Calle, A.; Dominguez, C.; Lechuga, L. M.

    2006-05-01

    The fabrication, characterization and packaging of novel microfluidic-optical integrated biosensors for label-free biochemical detection is presented in this paper. The integrated device consists of a three-dimensional embedded microchannel network fabricated using enhanced CMOS compatible SU-8 multilevel polymer technology on top of a wafer containing Mach-Zehnder Interferometer (MZI) nanophotonic biosensor devices. PMMA housing provides connection to the macro-world and ensures robust leakage-free flow operation of the devices. This macro-microfluidic module can operate at pressure drops up to 1000 kPa. Fluid flow experiments have been performed in order to demonstrate the robustness of our microfluidic devices. The devices have been designed to operate under continuous flow. Steady-state flow rates ranging from 1 to 100 µl min-1 at pressure drops ranging from 10 to 500 kPa were measured in the laminar flow regime. Experimental results are in good agreement with laminar flow theory. The first interferometric sensing measurements are presented in order to demonstrate the functionality of these novel integrated devices for lab-on-a-chip and label-free biosensing applications. A bulk refractive index detection limit of 3.8 × 10-6 was obtained, close to the minimum detected up to now by label-free biosensor devices without microfluidic integration. As far as we know, this is the first time that a label-free biosensor device is integrated within a microfluidic network using a wafer-level CMOS compatible process technology.

  1. Technological and Physical Compatibilities in Hybrid Integration of Laser and Monolithic Integration of Waveguide, Photodetector and CMOS Circuits on Silicon

    NARCIS (Netherlands)

    Zhou, M.J.; Ikkink, T.; Chalmers, J.; Kranenburg, H. van; Albers, H.; Holleman, J.; Lambeck, P.V.; Joppe, J.L.; Bekman, H.H.P.T.; Krijger, A.J.T. de

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  2. Experimental demonstration of CMOS-compatible long-range dielectric-loaded surface plasmon-polariton waveguides (LR-DLSPPWs)

    DEFF Research Database (Denmark)

    Zektzer, Roy; Desiatov, Boris; Mazurski, Noa;

    2015-01-01

    We demonstrate the design, fabrication and experimental characterization of long-range dielectric-loaded surface plasmon-polariton waveguides (LR-DLSPPWs) that are compatible with complementary metal-oxide semiconductor (CMOS) technology. The demonstrated waveguides feature good mode confinement...

  3. Technological and physical compatibilities in hybrid integration of laser and monolithic integration of waveguide, photodetector and CMOS circuits on silicon

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Ikkink, Ton; Chalmers, John; Kranenburg, van Herma; Albers, Hans; Holleman, Jisk; Lambeck, Paul; Joppe, Jan Leendert; Bekman, Herman; Krijger, de Ton; Lambeck, P.V.

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  4. A CMOS-compatible silicon photonic platform for high-speed integrated opto-electronics

    Science.gov (United States)

    Galland, Christophe; Novack, Ari; Liu, Yang; Ding, Ran; Gould, Michael; Baehr-Jones, Tom; Li, Qi; Yang, Yisu; Ma, Yangjin; Zhang, Yi; Padmaraju, Kishore; Bergmen, Keren; Lim, Andy Eu-Jin; Lo, Guo-Qiang; Hochberg, Michael

    2013-05-01

    We have developed a CMOS-compatible Silicon-on-Insulator photonic platform featuring active components such as pi- n and photoconductive (MIM) Ge-on-Si detectors, p-i-n ring and Mach-Zehnder modulators, and traveling-wave modulators based on a p-n junction driven by an RF transmission line. We have characterized the yield and uniformity of the performance through automated cross-wafer testing, demonstrating that our process is reliable and scalable. The entire platform is capable of more than 40 GB/s data rate. Fabricated at the IME/A-STAR foundry in Singapore, it is available to the worldwide community through OpSIS, a successful multi-project wafer service based at the University of Delaware. After exposing the design, fabrication and performance of the most advanced platform components, we present our newest results obtained after the first public run. These include low loss passives (Y-junctions: 0.28 dB; waveguide crossings: 0.18 dB and cross-talk -41+/-2 dB; non-uniform grating couplers: 3.2+/-0.2 dB). All these components were tested across full 8" wafers and exhibited remarkable uniformity. The active devices were improved from the previous design kit to exhibit 3dB bandwidths ranging from 30 GHz (modulators) to 58 GHz (detectors). We also present new packaging services available to OpSIS users: vertical fiber coupling and edge coupling.

  5. Completely CMOS compatible SiN-waveguide-based fiber coupling structure for Si wire waveguides.

    Science.gov (United States)

    Maegami, Yuriko; Okano, Makoto; Cong, Guangwei; Ohno, Morifumi; Yamada, Koji

    2016-07-25

    For Si wire waveguides, we designed a highly efficient fiber coupling structure consisting of a Si inverted taper waveguide and a CMOS-compatible thin SiN waveguide with an SiO2 spacer inserted between them. By using a small SiN waveguide with a 310 nm-square core, the optical field can be expanded to correspond to a fiber with a 4.0-μm mode field diameter. A coupled waveguide system with the SiN waveguide and Si taper waveguide can provide low-loss and low-polarization-dependent mode conversion. Both losses in fiber-SiN waveguide coupling and SiN-Si waveguide mode conversion are no more than 1 dB in a wide wavelength bandwidth from 1.36 μm to 1.65 μm. Through a detailed analysis of the effective refractive indices in the coupled waveguide system, we can understand mode conversion accurately and also derive guidelines for reducing the polarization dependence and for shortening device length.

  6. CMOS-compatible silicon nitride spectrometers for lab-on-a-chip spectral sensing

    Science.gov (United States)

    Ryckeboer, Eva; Nie, Xiaomin; Subramanian, Ananth Z.; Martens, Daan; Bienstman, Peter; Clemmen, Stephane; Severi, Simone; Jansen, Roelof; Roelkens, Gunther; Baets, Roel

    2016-05-01

    We report on miniaturized optical spectrometers integrated on a photonic integrated circuit (PIC) platform based on silicon nitride waveguides and fabricated in a CMOS-compatible approach. As compared to a silicon- on-insulator PIC-platform, the usage of silicon nitride allows for operation in the visible and near infrared. Furthermore, the moderately high refractive index contrast in silicon-nitride photonic wire waveguides provides a valuable compromise between compactness, optical loss and sensitivity to phase error. Three generic types of on-chip spectrometers are discussed: the arrayed waveguide grating (AWG) spectrometer, the echelle grating or planar concave grating (PCG) spectrometer and the stationary Fourier transform spectrometer (FTS) spectrometer. Both the design as well as experimental results are presented and discussed. For the FTS spectrometer a specific design is described in detail leading to an ultra-small (0.1 mm2) footprint device with a resolution of 1 nm and a spectral range of 100nm. Examples are given of the usage of these spectrometers in refractive index biosensing, absorption spectroscopy and Raman spectroscopy.

  7. Tunable, Room Temperature CMOS-Compatible THz Emitters Based on Nonlinear Mixing in Microdisk Resonators

    Science.gov (United States)

    Sinha, Raju; Karabiyik, Mustafa; Ahmadivand, Arash; Al-Amin, Chowdhury; Vabbina, Phani Kiran; Shur, Michael; Pala, Nezih

    2016-03-01

    We propose and investigate in detail a novel tunable, compact, room temperature terahertz (THz) emitter using individual microdisk resonators for both optical and THz waves with the capability of radiating THz field in 0.5-10 THz range with tuning frequency resolution of 0.05 THz. Enhanced THz generation is achieved by employing a nonlinear optical disk resonator with a high value of second-order nonlinearity ( χ (2)) in order to facilitate the difference-frequency generation (DFG) via nonlinear mixing with the choice of two appropriate input infrared optical waves. Efficient coupling of infrared waves from bus to the nonlinear disk is ensured by satisfying critical coupling condition. Phase matching condition for efficient DFG process is also met by employing modal phase matching technique. Our simulations show that THz output power can be reached up to milliwatt (mW) level with high optical to THz conversion efficiency. The proposed source is Silicon on Insulator (SoI) technology compatible enabling the monolithic integration with Si complementary metal-oxide-semiconductor (CMOS) electronics including plasmonic THz detectors.

  8. Enhanced optical nonlinearities in CMOS-compatible ultra-silicon-rich nitride photonic crystal waveguides

    Science.gov (United States)

    Sahin, E.; Ooi, K. J. A.; Chen, G. F. R.; Ng, D. K. T.; Png, C. E.; Tan, D. T. H.

    2017-09-01

    We present the design, fabrication, and characterization of photonic crystal waveguides (PhCWs) on an ultra-silicon-rich nitride (USRN) platform, with the goal of augmenting the optical nonlinearities. The design goals are to achieve an optimized group index curve on the PhCW band edge with a non-membrane PhCW with symmetric SiO2 undercladding and overcladding, so as to maintain back-end CMOS compatibility and better structural robustness. Linear optical characterization, as well as nonlinear optical characterization of PhCWs on ultra-silicon-rich nitride is performed at the telecommunication wavelengths. USRN's negligible two-photon absorption and free carrier losses at the telecommunication wavelengths ensure that there is no scaling of two-photon related losses with the group index, thus maintaining a high nonlinear efficiency. Self-phase modulation experiments are performed using a 96.6 μm PhCW. A 1.5π phase shift is achieved with an input peak power of 2.5 W implying an effective nonlinear parameter of 1.97 × 104 (W m)-1. This nonlinear parameter represents a 49× enhancement in the nonlinear parameter from the slow light effect, in good agreement with expected scaling from the measured group index.

  9. Fabrication of SU-8 multilayer microstructures based on successive CMOS compatible adhesive bonding and releasing steps.

    Science.gov (United States)

    Agirregabiria, M; Blanco, F J; Berganzo, J; Arroyo, M T; Fullaondo, A; Mayora, K; Ruano-López, J M

    2005-05-01

    This paper describes a novel fabrication process based on successive wafer-level bonding and releasing steps for stacking several patterned layers of the negative photoresist EPON SU-8. This work uses a polyimide film to enhance previous low temperature bonding technology. The film acts as a temporary substrate where the SU-8 is photopatterned. The poor adhesion between the polyimide film and SU-8 allows the film to be released after the bonding process, even though the film is still strong enough to carry out photolithography. Using this technique, successive adhesive bonding steps can be carried out to obtain complex 3-D multilayer structures. Interconnected channels with smooth vertical sidewalls and freestanding structures are fabricated. Unlike previous works, all the layers are photopatterned before the bonding process yielding sealed cavities and complex three-dimensional structures without using a sacrificial layer. Adding new SU-8 layers reduces the bonding quality because each additional layer decreases the thickness uniformity and increases the polymer crosslinking level. The effect of these parameters is quantified in this paper. This process guarantees compatibility with CMOS electronics and MEMS. Furthermore, the releasing step leaves the input and the output of the microchannels in contact with the outside world, avoiding the usual slow drilling process of a cover. Hence, in addition to the straightforward integration of electrodes on a chip, this fabrication method facilitates the packaging of these microfluidic devices.

  10. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Science.gov (United States)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  11. Study of dc micro-discharge arrays made in silicon using CMOS compatible technology

    Science.gov (United States)

    Kulsreshath, M. K.; Schwaederle, L.; Overzet, L. J.; Lefaucheux, P.; Ladroue, J.; Tillocher, T.; Aubry, O.; Woytasik, M.; Schelcher, G.; Dussart, R.

    2012-07-01

    In this paper we present the fabrication technology used to make micro-discharge ‘reactors’ on a silicon (Si) substrate. For the fabrication of these reactors we have used Si wafers with 4 inch diameter and standard cleanroom facilities. The fabrication technology used is compatible with standard CMOS device fabrication and the fabricated micro-discharge reactors can be used to produce dc discharges. These micro-discharges operate at near atmospheric pressure. They were given ring-shaped anodes separated from the cathode by a SiO2 dielectric with a thickness of approximately 5-6 µm rather than the much more common ˜100 µm. The micro-discharge reactors can consist of either a single hole or multiple holes and we have built devices with holes from 25 to 150 µm in diameter. The micro-discharge measurements were obtained for helium and argon dc plasmas between 100 and 1000 Torr. We used a single ballast resistor to produce micro-discharges in multi-hole array. This resistor also acted to limit the discharge power. An average current density of 0.8 A cm-2 was calculated for the 1024 holes array with 100 µm diameter holes. In addition, we will report on stability of micro-discharges depending on the cavity configuration of the micro-reactors and the ignition trends for the micro-discharge arrays. Finally, we discuss the life time of micro-discharge arrays as well as the factors affecting them (cathode sputtering, thermally affected zones, etc).

  12. Ultra-low-loss CMOS-Compatible Waveguide Crossing Arrays Based on Multimode Bloch Waves and Imaginary Coupling

    OpenAIRE

    Liu, Yangyang; Shainline, Jeffrey M.; Zeng, Xiaoge; Popovic, Milos A.

    2013-01-01

    We experimentally demonstrate broadband waveguide crossing arrays showing ultra low loss down to $0.04\\,$dB/crossing ($0.9\\%$), matching theory, and crosstalk suppression over $35\\,$dB, in a CMOS-compatible geometry. The principle of operation is the tailored excitation of a low-loss spatial Bloch wave formed by matching the periodicity of the crossing array to the difference in propagation constants of the 1$^\\text{st}$- and 3$^\\text{rd}$-order TE-like modes of a multimode silicon waveguide....

  13. Development of CMOS Compatible Humidity Sensor%CMOS兼容湿度传感器的研究进展

    Institute of Scientific and Technical Information of China (English)

    严先蔚; 秦明; 黄庆安

    2001-01-01

    In this paper, we present the design principle and fabrication method of six different CMOS compatible humidity sensors and their measuring circuits. The prospect of the humidity sensor is also discussed.%本文主要介绍几种与CMOS工艺兼容的湿度传感器的结构、工艺、特点以及处理电路,并对湿度传感器的发展趋势作了探讨。

  14. Growth and optical properties of CMOS-compatible silicon nanowires for photonic devices

    Science.gov (United States)

    Guichard, Alex Richard

    Silicon (Si) is the dominant semiconductor material in both the microelectronic and photovoltaic industries. Despite its poor optical properties, Si is simply too abundant and useful to be completely abandoned in either industry. Since the initial discovery of efficient room temperature photoluminescence (PL) from porous Si and the following discoveries of PL and time-resolved optical gain from Si nanocrystals (Si-nc) in SiO2, many groups have studied the feasibility of making Si-based, CMOS-compatible electroluminescent devices and electrically pumped lasers. These studies have shown that for Si-ne sizes below about 10 nm, PL can be attributed to radiative recombination of confined excitons and quantum efficiencies can reach 90%. PL peak energies are blue-shifted from the bulk Si band edge of 1.1 eV due to the quantum confinement effect and PL decay lifetimes are on mus timescales. However, many unanswered questions still exist about both the ease of carrier injection and various non-radiative and loss mechanisms that are present. A potential alternative material system to porous Si and Si-nc is Si nanowires (SiNWs). In this thesis, I examine the optical properties of SiNWs with diameters in the range of 3-30 nm fabricated by a number of compound metal oxide semiconductor (CMOS) compatible fabrication techniques including Chemical Vapor Deposition on metal nanoparticle coated substrates, catalytic wet etching of bulk Si and top-down electron-beam lithographic patterning. Using thermal oxidation and etching, we can increase the degree of confinement in the SiNWs. I demonstrate PL peaked in the visible and near-infrared (NIR) wavelength ranges that is tunable by controlling the crystalline SiNW core diameter, which is measured with dark field and high-resolution transmission electron microscopy. PL decay lifetimes of the SiNWs are on the order of 50 mus after proper surface passivation, which suggest that the PL is indeed from confined carriers in the SiNW cores

  15. Design and fabrication of a CMOS-compatible MHP gas sensor

    Directory of Open Access Journals (Sweden)

    Ying Li

    2014-03-01

    Full Text Available A novel micro-hotplate (MHP gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO2 film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3% in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.

  16. Electromagnetic modeling of surface plasmon resonance with Kretschmann configuration for biosensing applications in a CMOS-compatible interface

    Science.gov (United States)

    Salazar, A.; Camacho-Leon, S.; Rossetto, O.; Martínez-Chapa, S. O.

    2013-03-01

    Surface Plasmon Resonance (SPR) is a wave phenomenon occurring at an interface between a dielectric and a metal. SPR has applications in label-free biodetection systems, where advances in microfabrication techniques are fostering the development of SPR-based labs-on-a-chip. This work presents a numerical analysis for the excitation of SPR using Kretschmann's configuration. With a SiO2 prism, an Au metal layer, and water as the dielectric, the system is made to be compatible with a post-CMOS microfabrication process. The results obtained from both theory and software simulation show that for a light source at 633 nm, a 50 nm thick Au film is optimal, with the reflectivity falling to a minimum of ~2% at an angle of ~68.5°, due to maximum electromagnetic SPR coupling. Simulations with a Ti adhesion layer were also performed, showing a negative effect by increasing to ~17% the minimum reflectivity when SPR is achieved, thus reducing the dynamic range of the signal captured by the system's photodetector. SPR biosensors work by monitoring changes on the refractive index close to the SPR interface, these changes were simulated showing that a change of ~10-4 RIU on the dielectric medium produces a ~0.01°change in the SPR angle. These results will facilitate the physical implementation of label-free biosensing platforms with a CMOS image sensor (CIS) photodetection stage.

  17. Ultra-low-loss CMOS-Compatible Waveguide Crossing Arrays Based on Multimode Bloch Waves and Imaginary Coupling

    CERN Document Server

    Liu, Yangyang; Zeng, Xiaoge; Popovic, Milos A

    2013-01-01

    We experimentally demonstrate broadband waveguide crossing arrays showing ultra low loss down to $0.04\\,$dB/crossing ($0.9\\%$), matching theory, and crosstalk suppression over $35\\,$dB, in a CMOS-compatible geometry. The principle of operation is the tailored excitation of a low-loss spatial Bloch wave formed by matching the periodicity of the crossing array to the difference in propagation constants of the 1$^\\text{st}$- and 3$^\\text{rd}$-order TE-like modes of a multimode silicon waveguide. Radiative scattering at the crossing points acts like a periodic imaginary-permittivity perturbation that couples two supermodes, which results in imaginary (radiative) propagation-constant splitting and gives rise to a low-loss, unidirectional breathing Bloch wave. This type of crossing array provides a robust implementation of a key component enabling dense photonic integration.

  18. Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration.

    Science.gov (United States)

    Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui

    2012-01-30

    We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.

  19. Local and CMOS-compatible synthesis of CuO nanowires on a suspended microheater on a silicon substrate.

    Science.gov (United States)

    Zhang, Kaili; Yang, Yang; Pun, E Y B; Shen, Ruiqi

    2010-06-11

    This paper presents the synthesis of CuO nanowires using a localized thermal heating method in ambient air. It employs local heat sources defined in micro-resistive heaters fabricated by a standard polysilicon-based surface micromachining process instead of a global furnace heating. Since the synthesis is performed globally at room temperature, the presented process is compatible with standard CMOS. The synthesized CuO nanowires are characterized by scanning electron microscopy, transmission electron microscopy and high resolution transmission electron microscopy. It is found that this approach provides a simple method to locally synthesize suspended CuO nanowires on polysilicon microbridges on silicon substrates, thus allowing for integration of CuO nanowires into silicon-based devices. It provides a significant step towards the process integration of CuO nanowires with MEMS to realize functional devices.

  20. Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitry.

    Science.gov (United States)

    Clemmen, Stéphane; Hermans, Artur; Solano, Eduardo; Dendooven, Jolien; Koskinen, Kalle; Kauranen, Martti; Brainis, Edouard; Detavernier, Christophe; Baets, Roel

    2015-11-15

    We report the fabrication of artificial unidimensional crystals exhibiting an effective bulk second-order nonlinearity. The crystals are created by cycling atomic layer deposition of three dielectric materials such that the resulting metamaterial is noncentrosymmetric in the direction of the deposition. Characterization of the structures by second-harmonic generation Maker-fringe measurements shows that the main component of their nonlinear susceptibility tensor is about 5 pm/V, which is comparable to well-established materials and more than an order of magnitude greater than reported for a similar crystal [Appl. Phys. Lett.107, 121903 (2015)APPLAB0003-695110.1063/1.4931492]. Our demonstration opens new possibilities for second-order nonlinear effects on CMOS-compatible nanophotonic platforms.

  1. Multifunctional Platform with CMOS-Compatible Tungsten Microhotplate for Pirani, Temperature, and Gas Sensor

    Directory of Open Access Journals (Sweden)

    Jiaqi Wang

    2015-10-01

    Full Text Available A multifunctional platform based on the microhotplate was developed for applications including a Pirani vacuum gauge, temperature, and gas sensor. It consisted of a tungsten microhotplate and an on-chip operational amplifier. The platform was fabricated in a standard complementary metal oxide semiconductor (CMOS process. A tungsten plug in standard CMOS process was specially designed as the serpentine resistor for the microhotplate, acting as both heater and thermister. With the sacrificial layer technology, the microhotplate was suspended over the silicon substrate with a 340 nm gap. The on-chip operational amplifier provided a bias current for the microhotplate. This platform has been used to develop different kinds of sensors. The first one was a Pirani vacuum gauge ranging from 1-1 to 105 Pa. The second one was a temperature sensor ranging from -20 to 70 °C. The third one was a thermal-conductivity gas sensor, which could distinguish gases with different thermal conductivities in constant gas pressure and environment temperature. In the fourth application, with extra fabrication processes including the deposition of gas-sensitive film, the platform was used as a metal-oxide gas sensor for the detection of gas concentration.

  2. CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

    Science.gov (United States)

    Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

    2015-12-01

    Frequency reference and timing control devices are ubiquitous in electronic applications. There is at least one resonator required for each of this device. Currently electromechanical resonators such as crystal resonator, ceramic resonator are the ultimate choices. This tendency will probably keep going for many more years. However, current market demands for small size, low power consumption, cheap and reliable products, has divulged many limitations of this type of resonators. They cannot be integrated into standard CMOS (Complement metaloxide- semiconductor) IC (Integrated Circuit) due to material and fabrication process incompatibility. Currently, these devices are off-chip and they require external circuitries to interface with the ICs. This configuration significantly increases the overall size and cost of the entire electronic system. In addition, extra external connection, especially at high frequency, will potentially create negative impacts on the performance of the entire system due to signal degradation and parasitic effects. Furthermore, due to off-chip packaging nature, these devices are quite expensive, particularly for high frequency and high quality factor devices. To address these issues, researchers have been intensively studying on an alternative for type of resonator by utilizing the new emerging MEMS (Micro-electro-mechanical systems) technology. Recent progress in this field has demonstrated a MEMS resonator with resonant frequency of 2.97 GHz and quality factor (measured in vacuum) of 42900. Despite this great achievement, this prototype is still far from being fully integrated into CMOS system due to incompatibility in fabrication process and its high series motional impedance. On the other hand, fully integrated MEMS resonator had been demonstrated but at lower frequency and quality factor. We propose a design and fabrication process for a low cost, high frequency and a high quality MEMS resonator, which can be integrated into a standard

  3. Frequency notching applicable to CMOS implementation of WLAN compatible IR-UWB pulse generators

    DEFF Research Database (Denmark)

    Shen, Ming; Mikkelsen, Jan H.; Jiang, Hao

    2012-01-01

    Due to overlapping frequency bands, IEEE 802.11a WLAN and Ultra Wide-Band systems potentially suffer from mutual interference problems. This paper proposes a method for inserting frequency notches into the IR-UWB power spectrum to ensure compatibility with WLAN systems. In contrast to conventional...

  4. Micromachined ultrasound transducers with improved coupling factors from a CMOS compatible process

    Science.gov (United States)

    Eccardt; Niederer

    2000-03-01

    For medical high frequency acoustic imaging purposes the reduction in size of a single transducer element for one-dimensional and even more for two-dimensional arrays is more and more limited by fabrication and cabling technology. In the fields of industrial distance measurement and simple object recognition low cost phased arrays are lacking. Both problems can be solved with micromachined ultrasound transducers (MUTs). A single transducer is made of a large number of microscopic elements. Because of the array structure of these transducers, groups of elements can be built up and used as a phased array. By integrating parts of the sensor electronics on chip, the cabling effort for arrays can be reduced markedly. In contrast to standard ultrasonic technology, which is based on massive thickness resonators, vibrating membranes are the radiating elements of the MUTs. New micromachining technologies have emerged, allowing a highly reproducible fabrication of electrostatically driven membranes with gap heights below 500 nm. A microelectronic BiCMOS process was extended for surface micromechanics (T. Scheiter et al., Proceedings 11th European Conference on Solid-State Transducers, Warsaw, Vol. 3, 1997, pp. 1595-1598). Additional process steps were included for the realization of the membranes which form sealed cavities with the underlying substrate. Membrane and substrate are the opposite electrodes of a capacitive transducer. The transducers can be integrated monolithically on one chip together with the driving, preamplifying and multiplexing circuitry, thus reducing parasitic capacities and noise level significantly. Owing to their low mass the transducers are very well matched to fluid loads, resulting in a very high bandwidth of 50-100% (C. Eccardt et al., Proceedings Ultrasonics Symposium, San Antonio, Vol. 2, 1996, pp. 959-962; P.C. Eccardt et al., Proceedings of the 1997 Ultrasonics Symposium, Toronto, Vol. 2, 1997, pp. 1609-1618). In the following it is shown how

  5. PARAMETERIZED LAYOUT SYNTHESIS OF A CMOS-COMPATIBLE SCANNING MICROMIRROR WITH ELECTROTHERMAL ACTUATION AND BIMODAL RESONANT BEHAVIOR

    Directory of Open Access Journals (Sweden)

    Sergio Camacho León

    2011-01-01

    Full Text Available Este trabajo presenta una metodología de síntesis de parámetros para la automatización del diseño de un microespejo de escaneado compatible CMOS con comportamiento resonante bimodal. El microespejo está suspendido por actuadores térmicos bimorfos en voladizo con accionamiento fuera del plano. La metodología propone la optimización de espesores y el escaneo en el segundo modo de resonancia como estrategias para superar el conflicto característico entre el desempeño estático y dinámico del dispositivo. El objetivo es obtener automáticamente los parámetros de diseño del dispositivo que, de manera concurrente, maximizan el ángulo de rotación, minimizan el consumo de energía y satisfacen tanto las limitaciones de fabricación de un proceso CMOS estándar como las especificaciones de alto nivel para la posición del eje de rotación en el segundo modo de resonancia, la frecuencia de escaneado y el voltaje máximo de actuación. La metodología utiliza un espacio de diseño de nivel intermedio, definido por la razón de resistencia térmica a resistencia eléctrica del dispositivo a temperatura ambiente, para acoplar las restricciones del esfuerzo térmico máximo con la densidad de corriente eléctrica máxima de los materiales CMOS. El procedimiento de evaluación de funciones objetivos se desarrolla sobre la base de un modelo de elementos concentrados de la resistencia térmica del dispositivo para explorar sistemáticamente el espacio de diseño utilizando variaciones paramétricas. La metodología se aplica para diseñar un microescáner que tiene aplicaciones en sistemas imagenológicos de coherencia óptica. El desempeño del microescáner sintetizado es verificado por simulaciones mediante el método de elementos finitos. Los resultados obtenidos numéricamente presentan un buen ajuste con las especificaciones de alto nivel.

  6. CMOS-compatible InP/InGaAs digital photoreceiver

    Science.gov (United States)

    Lovejoy, Michael L.; Rose, Benny H.; Craft, David C.; Enquist, Paul M.; Slater, Jr., David B.

    1997-01-01

    A digital photoreceiver is formed monolithically on an InP semiconductor substrate and comprises a p-i-n photodetector formed from a plurality of InP/InGaAs layers deposited by an epitaxial growth process and an adjacent heterojunction bipolar transistor (HBT) amplifier formed from the same InP/InGaAs layers. The photoreceiver amplifier operates in a large-signal mode to convert a detected photocurrent signal into an amplified output capable of directly driving integrated circuits such as CMOS. In combination with an optical transmitter, the photoreceiver may be used to establish a short-range channel of digital optical communications between integrated circuits with applications to multi-chip modules (MCMs). The photoreceiver may also be used with fiber optic coupling for establishing longer-range digital communications (i.e. optical interconnects) between distributed computers or the like. Arrays of digital photoreceivers may be formed on a common substrate for establishing a plurality of channels of digital optical communication, with each photoreceiver being spaced by less than about 1 mm and consuming less than about 20 mW of power, and preferably less than about 10 mW. Such photoreceiver arrays are useful for transferring huge amounts of digital data between integrated circuits at bit rates of up to about 1000 Mb/s or more.

  7. CMOS-compatible catalytic growth of graphene on a silicon dioxide substrate

    Science.gov (United States)

    Lee, Jae-Hyun; Kim, Min-Sung; Lim, Jae-Young; Jung, Su-Ho; Kang, Seog-Gyun; Shin, Hyeon-Jin; Choi, Jae-Young; Hwang, Sung-Woo; Whang, Dongmok

    2016-08-01

    We report the direct growth of graphene on a dielectric SiO2 surface by utilizing complementary metal oxide semiconductor compatible germane as a gas-phase catalyst. Results of Raman spectroscopy and XPS confirmed that the synthesized graphene consist of a sp2 hybridized carbon network. We were able to fabricate graphene field effect transistors without the wet etching process, and the calculated mobility was ˜160 cm2/V.s at high carrier concentration (n = 3 × 1012 cm-2). Furthermore, the crystallinity and morphology of graphene is easily controlled from single-layer graphene to graphene nanowall structures by adjusting the reaction conditions. The results of this study verify the promising catalytic graphene growth method on a non-catalytic insulating surface without metal contaminations.

  8. A new generation of CMOS-compatible high frequency micro-inductors with ferromagnetic cores: Theory, fabrication and characterisation

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)]. E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Bekker, V. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2006-07-15

    A new generation of CMOS-compatible micro-inductor prototypes with magnetic cores were realized, characterised as well as theoretically modelled in a frequency range up to 4 GHz, a frequency range where, e.g., mobile communication and global positioning systems (GPS) are operated. The micro-inductor's electrical magnitudes like inductance (L) and quality factor (Q) were theoretically described by means of an equivalent circuit model taking the frequency behaviour of the magnetic film core, expressed by the Landau-Lifschitz and Maxwell equations, into account. Six inch targets were used to deposit metallic layers (Al{sub 99}Si{sub 0.5}Cu{sub 0.5}), diffusion barriers (Si{sub 3}N{sub 4}), insulating layers (SiO{sub 2}) and magnetic films (Fe{sub 39}Co{sub 3}Ta{sub 8}N{sub 23}) by DC or reactive r.-f.-magnetron sputtering. All film materials were patterned by NUV-lithography (Near Ultra Violet), plasma beam milling and reactive ion etching to form the micro-inductors on 4-inch silicon wafers. The inductor windings are arranged in a way that they possess a low resistance and generate a quasi closed flux at the end of the cores to minimise eddy current losses in the silicon substrate. In order to diminish demagnetising effects in an efficient working core the magnetic films were patterned into micro squares with lateral dimensions of 20 and 100 {mu}m with 100 nm in thickness. More magnetic volume and a higher micro-inductor cross-section was achieved by producing 100 nm magnetic double layers separated by a 800 nm thick Si{sub 3}N{sub 4} inter-layer. To guarantee a sufficiently high cut-off frequency of the magnetic films, they were annealed in a static magnetic field at a temperature of 400 deg. C for uniaxial anisotropy induction. This represents a temperature treatment where aluminium CMOS processes take place. As a result of patterning, the magnetic film material exhibited a remarkable increase of the cut-off frequency from 2 GHz in laterally extended films up

  9. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-08-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  10. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

    Science.gov (United States)

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-10-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

  11. A CMOS-compatible poly-Si nanowire device with hybrid sensor/memory characteristics for System-on-Chip applications.

    Science.gov (United States)

    Chen, Min-Cheng; Chen, Hao-Yu; Lin, Chia-Yi; Chien, Chao-Hsin; Hsieh, Tsung-Fan; Horng, Jim-Tong; Qiu, Jian-Tai; Huang, Chien-Chao; Ho, Chia-Hua; Yang, Fu-Liang

    2012-01-01

    This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically V(th)-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady V(th) adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

  12. A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

    Directory of Open Access Journals (Sweden)

    Chia-Hua Ho

    2012-03-01

    Full Text Available This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs in the conventional Complementary Metal-Oxide Semiconductor (CMOS-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH and sensitive deoxyribonucleic acid (DNA detection ability (100 pM at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window. The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

  13. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001 surface: nucleation, morphology, and CMOS compatibility

    Directory of Open Access Journals (Sweden)

    Yuryev Vladimir

    2011-01-01

    Full Text Available Abstract Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001 surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C and high (≳600°C temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001 surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001 quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

  14. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

    Science.gov (United States)

    Yuryev, Vladimir A; Arapkina, Larisa V

    2011-09-05

    Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

  15. Surface-micromachined Bragg Reflectors Based on Multiple Airgap/SiO2 Layers for CMOS-compatible Fabry-perot Filters in the UV-visible Spectral Range

    NARCIS (Netherlands)

    Ghaderi, M.; Ayerden, N.P.; De Graaf, G.; Wolffenbuttel, R.F.

    2014-01-01

    In CMOS-compatible optical filter designs, SiO2 is often used as the low-index material, limiting the optical contrast (nHi/nLo) to about 2. Using the air as low-index material improves the optical contrast by about 50%, thus increasing the reflectivity and bandwidth at a given design complexity.

  16. Surface-micromachined Bragg Reflectors Based on Multiple Airgap/SiO2 Layers for CMOS-compatible Fabry-perot Filters in the UV-visible Spectral Range

    NARCIS (Netherlands)

    Ghaderi, M.; Ayerden, N.P.; De Graaf, G.; Wolffenbuttel, R.F.

    2014-01-01

    In CMOS-compatible optical filter designs, SiO2 is often used as the low-index material, limiting the optical contrast (nHi/nLo) to about 2. Using the air as low-index material improves the optical contrast by about 50%, thus increasing the reflectivity and bandwidth at a given design complexity. Th

  17. Soft magnetic FeCoTaN film cores for new high-frequency CMOS compatible micro-inductors

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)]. E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Ziebert, C. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2007-09-15

    New high-frequency micro-inductors with thin magnetic film cores where developed by R.F.-magnetron sputtering and plasma beam as well as reactive ion etching. In order to realise soft magnetic films with magnetic resonance frequencies in the GHz range determined by frequency-dependent permeability measurements, 6-inch Fe{sub 47}Co{sub 36}Ta{sub 17} and Fe{sub 37}Co{sub 46}Ta{sub 17} targets were used to deposit FeCoTaN-films by reactive R.F.-magnetron sputtering in an Ar/N{sub 2} atmosphere. To obtain soft magnetic film properties with a marked uniaxial in-plane anisotropy needed for the high-frequency suitability, the films were annealed in a static magnetic field at CMOS temperatures of around 400 deg. C. Due to the specific material composition the films possess a nanocrystalline microstructure with a low magnetocrystalline anisotropy. The film material was employed to realise different magnetic cores for new micro-inductor designs fabricated by the CMOS aluminium process.

  18. TTLIC与CMOSIC的兼容性和差异性问题%THE COMPATIBILITY AND DIFFERENCE BETWEEN TTL IC AND CMOS IC

    Institute of Scientific and Technical Information of China (English)

    黄发忠

    2015-01-01

    Along with the rapid development of electronics,communications,computers,internet and other technologies,various functional semiconductor integrated circuits (referred to as IC)ever accelerating progress from small scale,medium -scale,large -scale to very large scale,which are used more and more widely.How to correctly understand and use the IC is an issue we often encounter.Taking the digital IC for ample,this paper discusses the compatibility and difference between TTLIC and CMOS IC from small scale,medium scale,large sale to very large scale,and special attention is paid to the small and medium scale.%伴随着电子、通信、计算机、互联网等技术的飞速发展,各种功能的半导体集成电路(简称 IC)不断地推陈出新,从小规模、中规模、大规模到超大规模,集成电路产品用途越来越广泛。如何正确认识和使用 IC 是大家经常遇到的问题,作者以数字集成电路芯片为例,按照小规模、中规模、大规模到超大规模分类了解,重点探讨中小规模 TTL IC 与 CMOS IC 使用时的兼容性和差异性问题,以便正确区别和选择使用。

  19. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    Science.gov (United States)

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

  20. Design of a 0.18 {mu}m CMOS multi-band compatible low power GNSS receiver RF frontend

    Energy Technology Data Exchange (ETDEWEB)

    Li Bing; Zhuang Yiqi; Long Qiang; Jin Zhao; Li Zhenrong; Jin Gang, E-mail: waxmax@126.com [Key Laboratory of the Ministry of Education for Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2011-03-15

    This paper presents the design and implementation of a fully integrated multi-band RF receiver frontend for GNSS applications on L-band. A single RF signal channel with a low-IF architecture is adopted for multi-band operation on the RF section, which mainly consists of a low noise amplifier (LNA), a down-converter, polyphase filters and summing circuits. An improved cascode source degenerated LNA with a multi-band shared off-chip matching network and band switches is implemented in the first amplifying stage. Also, a re-designed wideband double balance mixer is implemented in the down conversion stage, which provides better gain, noise figure and linearity performances. Using a TSMC 0.18 {mu}m 1P4M RF CMOS process, a compact 1.27 GHz/1.575 GHz dual-band GNSS frontend is realized in the proposed low-IF topology. The measurements exhibit the gains of 45 dB and 43 dB, and noise figures are controlled at 3.35 dB and 3.9 dB of the two frequency bands, respectively. The frontend model consumes about 11.8-13.5 mA current on a 1.8 V power supply. The core occupies 1.91 x 0.53 mm{sup 2} while the total die area with ESD is 2.45 x 2.36 mm{sup 2}. (semiconductor integrated circuits)

  1. A novel CMOS-compatible, monolithically integrated line-scan hyperspectral imager covering the VIS-NIR range

    Science.gov (United States)

    Gonzalez, Pilar; Tack, Klaas; Geelen, Bert; Masschelein, Bart; Charle, Wouter; Vereecke, Bart; Lambrechts, Andy

    2016-05-01

    Imec has developed a process for the monolithic integration of optical filters on top of CMOS image sensors, leading to compact, cost-efficient and faster hyperspectral cameras. Different prototype sensors are available, most notably a 600- 1000 nm line-scan imager, and two mosaic sensors: a 4x4 VIS (470-620 nm range) and a 5x5 VNIR (600-1000 nm). In response to the users' demand for a single sensor able to cover both the VIS and NIR ranges, further developments have been made to enable more demanding applications. As a result, this paper presents the latest addition to imec's family of monolithically-integrated hyperspectral sensors: a line scan sensor covering the range 470-900 nm. This new prototype sensor can acquire hyperspectral image cubes of 2048 pixels over 192 bands (128 bands for the 600- 900 nm range, and 64 bands for the 470-620 nm range) at 340 cubes per second for normal machine vision illumination levels.

  2. AMR magnetometer

    CERN Document Server

    Ripka, P; Platil, A; Doescher, M; Lenssen, K M H; Hauser, H

    2003-01-01

    Simple anisotropic magnetoresistance magnetometer with improved parameters was developed. New flipping circuits deliver optimized current pulse with 2.8 A amplitude. New type of signal processing uses switched integrator to avoid the most noisy time intervals. The achieved linearity is 0.2% in the +-200 mu T range without feedback and 0.04% using integrated feedback coil. The magnetometer noise at 1 Hz is 2 nT/Hz sup 1 sup / sup 2 , uncompensated temperature coefficient of sensitivity is -0.25%/K without the feedback and 0.01%/K with feedback. Temperature offset drift is typically 10 nT/K.

  3. A low-power 802.11 AD compatible 60-GHz phase-locked loop in 65-NM CMOS

    KAUST Repository

    Cheema, Hammad M.

    2015-01-23

    A 60-GHz fundamental frequency phase locked loop (PLL) as part of a highly integrated system-on-chip transmitter with onchip memory and antenna is presented. As a result of localized optimization approach for each component, the PLL core components only consume 30.2 mW from a 1.2 V supply. A systematic design procedure to achieve high phase margin and wide locking range is presented. The reduction of parasitic and fixed capacitance contributions in the voltage controlled oscillator enables the coverage of the complete 802.11 ad frequency band from 57.2 to 65.8 GHz. A new 4-stage distribution network supplying the local oscillator (LO) signal to the mixer, the feedback loop and the external equipment is introduced. The prescaler based on the static frequency division approach is enhanced using shunt-peaking and asymmetric capacitive loading. The current mode logic based divider chain is optimized for low power and minimum silicon foot-print. A dead-zone free phase frequency detector, low leakage charge pump, and an integrated second-order passive filter completes the feedback loop. The PLL implemented in 65 nm CMOS process occupies only 0.6 mm2 of chip space and has a measured locking range from 56.8 to 66.5 GHz. The reference spurs are lower than -40 dBc and the in-band and out-of-band phase noise is -88.12 dBc/Hz and -117 dBc/Hz, respectively.

  4. Design and fabrication of ripple-free CMOS-compatible stacked membranes for airgap optical filters for UV-visible spectrum

    Science.gov (United States)

    Ghaderi, Mohammadamir; de Graaf, Ger; Wolffenbuttel, Reinoud F.

    2016-04-01

    CMOS-compatible fabrication of thin dielectric membranes for the ultraviolet and visible spectrum is presented for use in airgap/SiO2-based interference filter design. A typical optical design consists of multiple membranes of 50-100 nm thickness. Maintaining flatness over a large area, as required by the optical application, is challenging. In such a free-standing membrane, the residual stress is the main force acting on the structure. Although an overall tensile residual stress can effectively stretch the membrane, too much stress would exceed the yield strength of the material and results in fracturing. Furthermore, the presence of a residual stress gradient causes the membrane to deform. In this work, the effect of a stress profile in the thin film has is investigated. Although PECVD SiO2 layers with an average tensile stress level of 178 MPa are used for the fabrication of the membranes, the presence of a stress gradient of about 0:67 MPa=nm results in a deformation in the membrane. A simple straining method is applied to reduce flatness. The preliminary results and discusses the challenges in the fabrication of stacked membranes for optical filters are presented.

  5. A Distributed Magnetometer Network

    CERN Document Server

    Scoville, John; Freund, Friedemann

    2014-01-01

    Various possiblities for a distributed magnetometer network are considered. We discuss strategies such as croudsourcing smartphone magnetometer data, the use of trees as magnetometers, and performing interferometry using magnetometer arrays to synthesize the magnetometers into the world's largest telescope. Geophysical and other applications of such a network are discussed.

  6. Atomic magnetometer

    Science.gov (United States)

    Schwindt, Peter [Albuquerque, NM; Johnson, Cort N [Albuquerque, NM

    2012-07-03

    An atomic magnetometer is disclosed which uses a pump light beam at a D1 or D2 transition of an alkali metal vapor to magnetically polarize the vapor in a heated cell, and a probe light beam at a different D2 or D1 transition to sense the magnetic field via a polarization rotation of the probe light beam. The pump and probe light beams are both directed along substantially the same optical path through an optical waveplate and through the heated cell to an optical filter which blocks the pump light beam while transmitting the probe light beam to one or more photodetectors which generate electrical signals to sense the magnetic field. The optical waveplate functions as a quarter waveplate to circularly polarize the pump light beam, and as a half waveplate to maintain the probe light beam linearly polarized.

  7. Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

    KAUST Repository

    Chen, Min Cheng

    2014-12-01

    Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

  8. Research of CMOS-compatible-integrated micro solar cell for passive UHF RFID tag%应用于无源UHF RFID标签的CMOS兼容集成微型太阳能电池研究

    Institute of Scientific and Technical Information of China (English)

    侯贺刚; 张世林; 郭维廉; 毛陆虹; 谢生; 韩磊

    2012-01-01

    在标准CMOS工艺下,设计了一种与CMOS工艺兼容的片上集成太阳能电池阵列,通过从外部环境收集光能为UHF射频识别(RFID)标签供电。采用SMIC 0.18μm CMOS工艺制备出太阳能电池阵列,其面积约为0.2mm2;在AM1.5、1 000W/m2、25℃标准测试条件下,测得最大输出功率为10.212μW,短路电流和开路电压分别为28.763μA和0.458V,光电转换效率为5.106%。相对于常规Si太阳能电池复杂的制造工艺,本文太阳能电池阵列与CMOS工艺相兼容,可与电路系统集成从而实现片上供电。%In this paper,the CMOS-compatible micro solar cell arrays with chip-scale designed in standard CMOS process are presented,which will receive solar energy from the environment and supply the UHF radio-frequency-identification(RFID) tag.The solar cell test chip is implemented by SMIC 0.18 μm CMOS technology with approximately 0.2 mm2 active area.The maximum output power obtained at AM 1.5,1 000 W/m2 and 25 ℃ is 10.212 μW,and the short-circuit current and open-circuit voltage are 28.763 μA and 0.458 V,respectively.The photoelectric conversion efficiency is 5.106%.In contrast to the complex manufacture processes for conventional solar cell,the CMOS solar cell is compatible with standard CMOS technology and can be integrated on the same chip to supply energy for the system.

  9. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  10. The Magsat scalar magnetometer

    Science.gov (United States)

    Farthing, W. H.

    1980-01-01

    The Magsat scalar magnetometer is derived from optical pumping magnetometers flown on the orbiting geophysical observatories. The basic sensor, a cross-coupled arrangement of absorption cells, photodiodes, and amplifiers, oscillates at the Larmor frequency of atomic moments precessing about the ambient field direction. The Larmor frequency output is accumulated digitally and stored for transfer to the spacecraft telemetry stream. In orbit the instrument has met its principal objective of calibrating the vector magnetometer and providing scalar field data.

  11. Aristoteles magnetometer system

    Science.gov (United States)

    Smith, Edward J.; Marquedant, Roy J.; Langel, Robert; Acuna, Mario

    1991-12-01

    A magnetometer system capable of meeting the stringent requirements of the Aristoteles mission is described. The system will comprise a three axis or Vector Flux gas Magnetometer (VFM) and a highly accurate resonance magnetometer, the Scalar Helium Magnetometer (SHM). Basic operational features of these instruments are described and their performance is related to the scientific objectives of the mission appropriate to the geomagnetic field measurements. The major requirements imposed on the spacecraft are summarized. Photographs and diagrams of both instruments are presented along with graphs of the sensitivity of the SHM to magnetic field orientation.

  12. Tuned cavity magnetometer sensitivity.

    Energy Technology Data Exchange (ETDEWEB)

    Okandan, Murat; Schwindt, Peter

    2009-09-01

    We have developed a high sensitivity (magnetometer that utilizes a novel optical (interferometric) detection technique. Further miniaturization and low-power operation are key advantages of this magnetometer, when compared to systems using SQUIDs which require liquid Helium temperatures and associated overhead to achieve similar sensitivity levels.

  13. Ultralow-loss CMOS copper plasmonic waveguides

    DEFF Research Database (Denmark)

    Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

    2016-01-01

    with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

  14. Nano CMOS

    Directory of Open Access Journals (Sweden)

    Malay Ranjan Tripathy

    2009-05-01

    Full Text Available Complementary metal-oxide-semiconductor (CMOS has become major challenge to scaling and integration. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern because of limitation of process control over statistical variability related to the fundamental discreteness of charge and matter. Different aspects responsible for device variability are discussed in this article. The challenges and opportunities of nano CMOS technology are outlined here.

  15. Dynamic analysis of atomic magnetometer and co-magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shihu, E-mail: 65980623@qq.com; Yu, Linke; Wang, Wei

    2016-03-01

    Some unsteady-state solutions of Bloch equation which well-describe the behavior of a magnetometer are obtained. These solutions are in accord with the experimental result of alkali-metal magnetometer and co-magnetometer gyroscope. Many interesting phenomena can be also achieved via the solutions. First, the measuring direction of a magnetometer changes with the variation of external magnetic field along z axis. And it could be used for measuring high frequency magnetic field. Then it can be extended that the co-magnetometer without compensated field can get better performance than simple atomic magnetometer due to the effect of polarized noble gas. Finally, we discussed the limits (bandwidth and so on) of atomic magnetometer and co-magnetometer with the Bloch equation of spins. These phenomena, which have not been mentioned before, may contribute to the development of atomic magnetometer and co-magnetometer gyroscope.

  16. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis descri...

  17. Nano CMOS

    OpenAIRE

    2009-01-01

    Complementary metal-oxide-semiconductor (CMOS) has become major challenge to scaling and integration. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern because of limitation of process control over statistical variability related to the fundamental discreteness of charge and matter. Different aspects responsible for device variability are discu...

  18. Cavity Optomechanical Magnetometer

    CERN Document Server

    Forstner, S; Knittel, J; van Ooijen, E D; Swaim, J D; Harris, G I; Szorkovszky, A; Bowen, W P; Rubinsztein-Dunlop, H

    2011-01-01

    A cavity optomechanical magnetometer is demonstrated where the magnetic field induced expansion of a magnetostrictive material is transduced onto the physical structure of a highly compliant optical microresonator. The resulting motion is read out optically with ultra-high sensitivity. Detecting the magnetostrictive deformation of Terfenol-D with a toroidal whispering gallery mode (TWGM) resonator a peak sensitivity of 400 nT/Hz^.5 was achieved with theoretical modelling predicting that sensitivities of up to 500 fT/Hz^.5 may be possible. This chip-based magnetometer combines high-sensitivity and large dynamic range with small size and room temperature operation.

  19. Tuned optical cavity magnetometer

    Science.gov (United States)

    Okandan, Murat; Schwindt, Peter

    2010-11-02

    An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.

  20. Cavity optomechanical magnetometer.

    Science.gov (United States)

    Forstner, S; Prams, S; Knittel, J; van Ooijen, E D; Swaim, J D; Harris, G I; Szorkovszky, A; Bowen, W P; Rubinsztein-Dunlop, H

    2012-03-23

    A cavity optomechanical magnetometer is demonstrated. The magnetic-field-induced expansion of a magnetostrictive material is resonantly transduced onto the physical structure of a highly compliant optical microresonator and read out optically with ultrahigh sensitivity. A peak magnetic field sensitivity of 400  nT  Hz(-1/2) is achieved, with theoretical modeling predicting the possibility of sensitivities below 1  pT  Hz(-1/2). This chip-based magnetometer combines high sensitivity and large dynamic range with small size and room temperature operation.

  1. Scalar magnetometers for space applications

    DEFF Research Database (Denmark)

    Primdahl, Fritz

    A survey of existing instrumentation and developments is presented emphasizing instrumentation for in-flight calibration of vector magnetometers on magnetic mapping missions. Proton free or forced precession magnetometers are at the focus as calibration references, because the proton gyromagnetic...

  2. GOES Space Environment Monitor, Magnetometer

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Three orthogonal flux-gate magnetometer elements, (spinning twin fluxgate magnetometer prior to GOES-8) provide magnetic field measurements in three mutually...

  3. A CMOS floating point multiplier

    Science.gov (United States)

    Uya, M.; Kaneko, K.; Yasui, J.

    1984-10-01

    This paper describes a 32-bit CMOS floating point multiplier. The chip can perform 32-bit floating point multiplication (based on the proposed IEEE Standard format) and 24-bit fixed point multiplication (two's complement format) in less than 78.7 and 71.1 ns, respectively, and the typical power dissipation is 195 mW at 10 million operations per second. High-speed multiplication techniques - a modified Booth's allgorithm, a carry save adder scheme, a high-speed CMOS full adder, and a modified carry select adder - are used to achieve the above high performance. The chip is designed for compatibility with 16-bit microcomputer systems, and is fabricated in 2 micron n-well CMOS technology; it contains about 23000 transistors of 5.75 x 5.67 sq mm in size.

  4. The Magnetospheric Multiscale Magnetometers

    Science.gov (United States)

    Russell, C. T.; Anderson, B. J.; Baumjohann, W.; Bromund, K. R.; Dearborn, D.; Fischer, D.; Le, G.; Leinweber, H. K.; Leneman, D.; Magnes, W.; Means, J. D.; Moldwin, M. B.; Nakamura, R.; Pierce, D.; Plaschke, F.; Rowe, K. M.; Slavin, J. A.; Strangeway, R. J.; Torbert, R.; Hagen, C.; Jernej, I.; Valavanoglou, A.; Richter, I.

    2016-03-01

    The success of the Magnetospheric Multiscale mission depends on the accurate measurement of the magnetic field on all four spacecraft. To ensure this success, two independently designed and built fluxgate magnetometers were developed, avoiding single-point failures. The magnetometers were dubbed the digital fluxgate (DFG), which uses an ASIC implementation and was supplied by the Space Research Institute of the Austrian Academy of Sciences and the analogue magnetometer (AFG) with a more traditional circuit board design supplied by the University of California, Los Angeles. A stringent magnetic cleanliness program was executed under the supervision of the Johns Hopkins University's Applied Physics Laboratory. To achieve mission objectives, the calibration determined on the ground will be refined in space to ensure all eight magnetometers are precisely inter-calibrated. Near real-time data plays a key role in the transmission of high-resolution observations stored on board so rapid processing of the low-resolution data is required. This article describes these instruments, the magnetic cleanliness program, and the instrument pre-launch calibrations, the planned in-flight calibration program, and the information flow that provides the data on the rapid time scale needed for mission success.

  5. CMOS-compatible athermal silicon microring resonators.

    Science.gov (United States)

    Guha, Biswajeet; Kyotoku, Bernardo B C; Lipson, Michal

    2010-02-15

    We propose a new class of resonant silicon optical devices, consisting of a ring resonator coupled to a Mach-Zehnder interferometer, which is passively temperature compensated by tailoring the optical mode confinement in the waveguides. We demonstrate operation of the device over a wide temperature range of 80 degrees. The fundamental principle behind this work can be extended to other photonic devices based on resonators such as modulators, routers, switches and filters.

  6. Optical atomic magnetometer

    Science.gov (United States)

    Budker, Dmitry; Higbie, James; Corsini, Eric P

    2013-11-19

    An optical atomic magnetometers is provided operating on the principles of nonlinear magneto-optical rotation. An atomic vapor is optically pumped using linearly polarized modulated light. The vapor is then probed using a non-modulated linearly polarized light beam. The resulting modulation in polarization angle of the probe light is detected and used in a feedback loop to induce self-oscillation at the resonant frequency.

  7. The IRM fluxgate magnetometer

    Science.gov (United States)

    Luehr, H.; Kloecker, N.; Oelschlaegel, W.; Haeusler, B.; Acuna, M.

    1985-01-01

    This report describes the three-axis fluxgate magnetometer instrument on board the AMPTE IRM spacecraft. Important features of the instrument are its wide dynamic range (0.1-60,000 nT), a high resolution (16-bit analog to digital conversion) and the capability to operate automatically or via telecommand in two gain states. In addition, the wave activity is monitored in all three components up to 50 Hz. Inflight checkout proved the nominal functioning of the instrument in all modes.

  8. Iterative Magnetometer Calibration

    Science.gov (United States)

    Sedlak, Joseph

    2006-01-01

    This paper presents an iterative method for three-axis magnetometer (TAM) calibration that makes use of three existing utilities recently incorporated into the attitude ground support system used at NASA's Goddard Space Flight Center. The method combines attitude-independent and attitude-dependent calibration algorithms with a new spinning spacecraft Kalman filter to solve for biases, scale factors, nonorthogonal corrections to the alignment, and the orthogonal sensor alignment. The method is particularly well-suited to spin-stabilized spacecraft, but may also be useful for three-axis stabilized missions given sufficient data to provide observability.

  9. Superconductive imaging surface magnetometer

    Science.gov (United States)

    Overton, Jr., William C.; van Hulsteyn, David B.; Flynn, Edward R.

    1991-01-01

    An improved pick-up coil system for use with Superconducting Quantum Interference Device gradiometers and magnetometers involving the use of superconducting plates near conventional pick-up coil arrangements to provide imaging of nearby dipole sources and to deflect environmental magnetic noise away from the pick-up coils. This allows the practice of gradiometry and magnetometry in magnetically unshielded environments. One embodiment uses a hemispherically shaped superconducting plate with interior pick-up coils, allowing brain wave measurements to be made on human patients. another embodiment using flat superconducting plates could be used in non-destructive evaluation of materials.

  10. CMOS circuits manual

    CERN Document Server

    Marston, R M

    1995-01-01

    CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

  11. Precessing Ferromagnetic Needle Magnetometer.

    Science.gov (United States)

    Jackson Kimball, Derek F; Sushkov, Alexander O; Budker, Dmitry

    2016-05-13

    A ferromagnetic needle is predicted to precess about the magnetic field axis at a Larmor frequency Ω under conditions where its intrinsic spin dominates over its rotational angular momentum, Nℏ≫IΩ (I is the moment of inertia of the needle about the precession axis and N is the number of polarized spins in the needle). In this regime the needle behaves as a gyroscope with spin Nℏ maintained along the easy axis of the needle by the crystalline and shape anisotropy. A precessing ferromagnetic needle is a correlated system of N spins which can be used to measure magnetic fields for long times. In principle, by taking advantage of rapid averaging of quantum uncertainty, the sensitivity of a precessing needle magnetometer can far surpass that of magnetometers based on spin precession of atoms in the gas phase. Under conditions where noise from coupling to the environment is subdominant, the scaling with measurement time t of the quantum- and detection-limited magnetometric sensitivity is t^{-3/2}. The phenomenon of ferromagnetic needle precession may be of particular interest for precision measurements testing fundamental physics.

  12. Scalar Calibration of Vector Magnetometers

    DEFF Research Database (Denmark)

    Merayo, José M.G.; Brauer, Peter; Primdahl, Fritz;

    2000-01-01

    The calibration parameters of a vector magnetometer are estimated only by the use of a scalar reference magnetometer. The method presented in this paper differs from those previously reported in its linearized parametrization. This allows the determination of three offsets or signals in the absence...

  13. Ultra-low Voltage CMOS Cascode Amplifier

    DEFF Research Database (Denmark)

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique...

  14. Kinetic inductance magnetometer.

    Science.gov (United States)

    Luomahaara, Juho; Vesterinen, Visa; Grönberg, Leif; Hassel, Juha

    2014-09-10

    Sensing ultra-low magnetic fields has various applications in the fields of science, medicine and industry. There is a growing need for a sensor that can be operated in ambient environments where magnetic shielding is limited or magnetic field manipulation is involved. To this end, here we demonstrate a new magnetometer with high sensitivity and wide dynamic range. The device is based on the current nonlinearity of superconducting material stemming from kinetic inductance. A further benefit of our approach is of extreme simplicity: the device is fabricated from a single layer of niobium nitride. Moreover, radio frequency multiplexing techniques can be applied, enabling the simultaneous readout of multiple sensors, for example, in biomagnetic measurements requiring data from large sensor arrays.

  15. Optically transduced MEMS magnetometer

    Science.gov (United States)

    Nielson, Gregory N; Langlois, Eric

    2014-03-18

    MEMS magnetometers with optically transduced resonator displacement are described herein. Improved sensitivity, crosstalk reduction, and extended dynamic range may be achieved with devices including a deflectable resonator suspended from the support, a first grating extending from the support and disposed over the resonator, a pair of drive electrodes to drive an alternating current through the resonator, and a second grating in the resonator overlapping the first grating to form a multi-layer grating having apertures that vary dimensionally in response to deflection occurring as the resonator mechanically resonates in a plane parallel to the first grating in the presence of a magnetic field as a function of the Lorentz force resulting from the alternating current. A plurality of such multi-layer gratings may be disposed across a length of the resonator to provide greater dynamic range and/or accommodate fabrication tolerances.

  16. Miniature Laser Magnetometer

    Science.gov (United States)

    Slocum, Robert; Brown, Andy

    2011-01-01

    A conceptual design has been developed for a miniature laser magnetometer (MLM) that will measure the scalar magnitude and vector components of near-Earth magnetic fields. The MLM incorporates a number of technical innovations to achieve high-accuracy and high-resolution performance while significantly reducing the size of the laser-pumped helium magnetometer for use on small satellites and unmanned aerial vehicles (UAVs). and electronics sections that has the capability of measuring both the scalar magnetic field magnitude and the vector magnetic field components. Further more, the high-accuracy scalar measurements are used to calibrate and correct the vector component measurements in order to achieve superior vector accuracy and stability. The correction algorithm applied to the vector components for calibration and the same cell for vector and scalar measurements are major innovations. The separate sensor and electronics section of the MLM instrument allow the sensor to be installed on a boom or otherwise located away from electronics and other noisy magnetic components. The MLM s miniaturization will be accomplished through the use of advanced miniaturized components and packaging methods for the MLM sensor and electronics. The MLM conceptual design includes three key innovations. The first is a new non-magnetic laser package that will allow the placement of the laser pump source near the helium cell sensing elements. The second innovation is the design of compact, nested, triaxial Braunbek coils used in the vector measurements that reduce the coil size by a factor of two compared to existing Helmholtz coils with similar field-generation performance. The third innovation is a compact sensor design that reduces the sensor volume by a factor of eight compared to MLM s predecessor.

  17. Miniature Laser Magnetometer (MLM) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This 2009 NASA SBIR Phase 1 proposal for an innovative Miniature Laser Magnetometer (MLM) is a response to subtopic S1.06 Particles and Field Sensors and Instrument...

  18. Miniature Laser Magnetometer (MLM) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This 2009 NASA SBIR Phase 2 proposal for an innovative Miniature Laser Magnetometer (MLM) is a response to subtopic S1.06 Particles and Field Sensors and Instrument...

  19. All optical vector magnetometer Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I research project will investigate a novel method of operating an atomic magnetometer to simultaneously measure total magnetic fields and vector magnetic...

  20. Optical Magnetometer Incorporating Photonic Crystals

    Science.gov (United States)

    Kulikov, Igor; Florescu, Lucia

    2007-01-01

    According to a proposal, photonic crystals would be used to greatly increase the sensitivities of optical magnetometers that are already regarded as ultrasensitive. The proposal applies, more specifically, to a state-of-the-art type of quantum coherent magnetometer that exploits the electromagnetically-induced-transparency (EIT) method for determining a small change in a magnetic field indirectly via measurement of the shift, induced by that change, in the hyperfine levels of resonant atoms exposed to the field.

  1. Simulation and Design of a CMOS-Process-Compatible High-Speed Si-Photodetector%与CMOS工艺兼容的硅高速光电探测器模拟与设计

    Institute of Scientific and Technical Information of China (English)

    毛陆虹; 陈弘达; 吴荣汉; 唐君; 梁琨; 粘华; 郭维廉; 李树荣; 吴霞宛

    2002-01-01

    用器件模拟的方法,设计了一种与常规CMOS 工艺兼容的硅高速光电探测器,该探测器可与CMOS接收机电路单片集成,对该探测器进行了器件模拟研究,给出了该探测器的电路模型.通过MOSIS(MOS implementation support project) 0.35μm COMS工艺制做了该探测器,实际测试了该器件的频率响应和波长响应,探测器频率响应在1GHz以上,峰值波长响应在0.69μm.

  2. Reliability engineering in RF CMOS

    OpenAIRE

    2008-01-01

    In this thesis new developments are presented for reliability engineering in RF CMOS. Given the increase in use of CMOS technology in applications for mobile communication, also the reliability of CMOS for such applications becomes increasingly important. When applied in these applications, CMOS is typically referred to as RF CMOS, where RF stands for radio frequencies.

  3. Cryogenic High-Sensitivity Magnetometer

    Science.gov (United States)

    Day, Peter; Chui, Talso; Goodstein, David

    2005-01-01

    A proposed magnetometer for use in a cryogenic environment would be sensitive enough to measure a magnetic-flux density as small as a picogauss (10(exp -16) Tesla). In contrast, a typical conventional flux-gate magnetometer cannot measure a magnetic-flux density smaller that about 1 microgauss (10(exp -10) Tesla). One version of this device, for operation near the low end of the cryogenic temperature range, would include a piece of a paramagnetic material on a platform, the temperature of which would be controlled with a periodic variation. The variation in temperature would be measured by use of a conventional germanium resistance thermometer. A superconducting coil would be wound around the paramagnetic material and coupled to a superconducting quantum interference device (SQUID) magnetometer.

  4. Ultralow-Loss CMOS Copper Plasmonic Waveguides.

    Science.gov (United States)

    Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

    2016-01-13

    Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips.

  5. CMOS-compatible spot-size converter for optical fiber to sub-μm silicon waveguide coupling with low-loss low-wavelength dependence and high tolerance to misalignment

    Science.gov (United States)

    Picard, Marie-Josée.; Latrasse, Christine; Larouche, Carl; Painchaud, Yves; Poulin, Michel; Pelletier, François; Guy, Martin

    2016-03-01

    One of the biggest challenges of silicon photonics is the efficient coupling of light between the sub-micron SiP waveguides and a standard optical fiber (SMF-28). We recently proposed a novel approach based on a spot-size converter (SSC) that fulfills this need. The SSC integrates a tapered silicon waveguide and a superimposed structure made of a plurality of rods of high index material, disposed in an array-like configuration and embedded in a cladding of lower index material. This superimposed structure defines a waveguide designed to provide an efficient adiabatic transfer, through evanescent coupling, to a 220 nm thick Si waveguide tapered down to a narrow tip on one side, while providing a large mode overlap to the optical fiber on the other side. An initial demonstration was made using a SSC fabricated with post-processing steps. Great coupling to a SMF-28 fiber with a loss of 0.6 dB was obtained for TEpolarized light at 1550 nm with minimum wavelength dependence. In this paper, SSCs designed for operation at 1310 and 1550 nm for TE/TM polarizations and entirely fabricated in a CMOS fab are presented.

  6. An Arduino-Based Magnetometer

    Science.gov (United States)

    McCaughey, Mike

    2017-01-01

    An Arduino-based system with a triple axis magnetometer chip may be used to plot both the strength and direction of the magnetic field of a magnet directly on a sheet of paper. Before taking measurements, it is necessary either to correct for or to eliminate soft and hard iron effects. The same sensor may be used to determine the presence of soft…

  7. Scalar magnetometers for space applications

    DEFF Research Database (Denmark)

    Primdahl, Fritz

    ratio is a basic atomic constant for the SI units of magnetic and electric current. The classical proton free precession, the Overhauser forced oscillation and a new field cycling Overhauser are presented. Alkali metal vapor magnetometers, although not absolute in the same sense as the classical proton...

  8. [Portable magnetometers for detecting magnetic pathogenic zones].

    Science.gov (United States)

    Lomaev, G V; Vodenikov, S K; Vasil'ev, M Iu

    1997-01-01

    Perspective magnetometers needed to solve many problems of electromagnetic ecology are presented. A magnetometer block scheme is presented, its work and engineering philosophy described. High thermal stability and linear characteristics of the device are ensured by the compensation measurements. Results of measuring the attenuation of magnetic field of the Earth inside various objects by the magnetometer are presented.

  9. CAOS-CMOS camera.

    Science.gov (United States)

    Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

    2016-06-13

    Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

  10. High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates

    NARCIS (Netherlands)

    Ponomarev, Youri V.; Stolk, Peter A.; Salm, Cora; Schmitz, Jurriaan; Woerlee, P.H.

    2000-01-01

    The use of polycrystalline SiGe as the gate material for deep submicron CMOS has been investigated. A complete compatibility to standard CMOS processing is demonstrated when polycrystalline Si is substituted with SiGe (for Ge fractions below 0.5) to form the gate electrode of the transistors. Perfor

  11. High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates

    NARCIS (Netherlands)

    Ponomarev, Youri V.; Stolk, Peter A.; Salm, Cora; Schmitz, Jurriaan; Woerlee, P.H.

    2000-01-01

    The use of polycrystalline SiGe as the gate material for deep submicron CMOS has been investigated. A complete compatibility to standard CMOS processing is demonstrated when polycrystalline Si is substituted with SiGe (for Ge fractions below 0.5) to form the gate electrode of the transistors.

  12. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... these issues and presents the development leading to applicable technological solutions. The via technology developed in this work enable effective utilization of the available surface area on both sides of the amplifier chip for redistribution as well as placement of passive components and external...... connections. A process for wafer level packaging and assembly of chips with vias is presented in this thesis. Discrete components, capacitors and resistors, are assembled on the backside of the amplifier chips by screen printing of solder paste, pick and place of components, and reflow soldering. Since...

  13. Atomic magnetometer for human magnetoencephalograpy.

    Energy Technology Data Exchange (ETDEWEB)

    Schwindt, Peter; Johnson, Cort N.

    2010-12-01

    We have developed a high sensitivity (<5 fTesla/{radical}Hz), fiber-optically coupled magnetometer to detect magnetic fields produced by the human brain. This is the first demonstration of a noncryogenic sensor that could replace cryogenic superconducting quantum interference device (SQUID) magnetometers in magnetoencephalography (MEG) and is an important advance in realizing cost-effective MEG. Within the sensor, a rubidium vapor is optically pumped with 795 laser light while field-induced optical rotations are measured with 780 nm laser light. Both beams share a single optical axis to maximize simplicity and compactness. In collaboration with neuroscientists at The Mind Research Network in Albuquerque, NM, the evoked responses resulting from median nerve and auditory stimulation were recorded with the atomic magnetometer and a commercial SQUID-based MEG system with signals comparing favorably. Multi-sensor operation has been demonstrated with two AMs placed on opposite sides of the head. Straightforward miniaturization would enable high-density sensor arrays for whole-head magnetoencephalography.

  14. Miniature atomic scalar magnetometer for space based on the rubidium isotope 87Rb

    Science.gov (United States)

    Korth, Haje; Strohbehn, Kim; Tejada, Francisco; Andreou, Andreas G.; Kitching, John; Knappe, Svenja; Lehtonen, S. John; London, Shaughn M.; Kafel, Matiwos

    2016-08-01

    A miniature atomic scalar magnetometer based on the rubidium isotope 87Rb was developed for operation in space. The instrument design implements both Mx and Mz mode operation and leverages a novel microelectromechanical system (MEMS) fabricated vapor cell and a custom silicon-on-sapphire (SOS) complementary metal-oxide-semiconductor (CMOS) integrated circuit. The vapor cell has a volume of only 1 mm3 so that it can be efficiently heated to its operating temperature by a specially designed, low-magnetic-field-generating resistive heater implemented in multiple metal layers of the transparent sapphire substrate of the SOS-CMOS chips. The SOS-CMOS chip also hosts the Helmholtz coil and associated circuitry to stimulate the magnetically sensitive atomic resonance and temperature sensors. The prototype instrument has a total mass of fewer than 500 g and uses less than 1 W of power, while maintaining a sensitivity of 15 pT/√Hz at 1 Hz, comparable to present state-of-the-art absolute magnetometers.

  15. Miniature atomic scalar magnetometer for space based on the rubidium isotope (87)Rb.

    Science.gov (United States)

    Korth, Haje; Strohbehn, Kim; Tejada, Francisco; Andreou, Andreas G; Kitching, John; Knappe, Svenja; Lehtonen, S John; London, Shaughn M; Kafel, Matiwos

    2016-08-01

    A miniature atomic scalar magnetometer based on the rubidium isotope (87)Rb was developed for operation in space. The instrument design implements both Mx and Mz mode operation and leverages a novel microelectromechanical system (MEMS) fabricated vapor cell and a custom silicon-on-sapphire (SOS) complementary metal-oxide-semiconductor (CMOS) integrated circuit. The vapor cell has a volume of only 1 mm(3) so that it can be efficiently heated to its operating temperature by a specially designed, low-magnetic-field-generating resistive heater implemented in multiple metal layers of the transparent sapphire substrate of the SOS-CMOS chips. The SOS-CMOS chip also hosts the Helmholtz coil and associated circuitry to stimulate the magnetically sensitive atomic resonance and temperature sensors. The prototype instrument has a total mass of fewer than 500 g and uses less than 1 W of power, while maintaining a sensitivity of 15 pT/√Hz at 1 Hz, comparable to present state-of-the-art absolute magnetometers.

  16. Beyond CMOS nanodevices 1

    CERN Document Server

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

  17. Beyond CMOS nanodevices 2

    CERN Document Server

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

  18. Composite Rolled Magnetometer and Instrument Boom Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Magnetometers are the most common instrument flown on NASA science missions and interference from onboard electronics requires that these instruments be deployed...

  19. CMOS MEMS capacitive absolute pressure sensor

    Science.gov (United States)

    Narducci, M.; Yu-Chia, L.; Fang, W.; Tsai, J.

    2013-05-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal-oxide-semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa-1 in the pressure range of 0-300 kPa.

  20. A Complete Cubesat Magnetometer System Project

    Science.gov (United States)

    Zesta, Eftyhia

    2014-01-01

    The objective of this work is to provide the center with a fully tested, flexible, low cost, miniaturized science magnetometer system applicable to small satellite programs, like Cubesats, and to rides of opportunity that do not lend themselves to the high integration costs a science magnetometer on a boom necessitates.

  1. Digitalization of highly precise fluxgate magnetometers

    DEFF Research Database (Denmark)

    Cerman, Ales; Kuna, A.; Ripka, P.

    2005-01-01

    This paper describes the theory behind all three known ways of digitalizing the fluxgate magnetometers: analogue magnetometers with digitalized output using high resolution ADC, application of the delta-sigma modulation to the sensor feedback loop and fully digital signal detection. At present time...... the Delta-Sigma ADCs are mostly used for the digitalization of the highly precise fluxgate magnetorneters. The relevant part of the paper demonstrates some pitfalls of their application studied during the design of the magnetometer for the new Czech scientific satellite MIMOSA. The part discussing...... the application of the A-E modulation to the sensor feedback loop theoretically derives the main advantage of this method-increasing of the modulation order and shows its real potential compared to the analog magnetometer with consequential digitalization. The comparison is realized on the modular magnetometer...

  2. Optical magnetometer array for fetal magnetocardiography.

    Science.gov (United States)

    Wyllie, Robert; Kauer, Matthew; Wakai, Ronald T; Walker, Thad G

    2012-06-15

    We describe an array of spin-exchange-relaxation-free optical magnetometers designed for detection of fetal magnetocardiography (fMCG). The individual magnetometers are configured with a small volume with intense optical pumping, surrounded by a large pump-free region. Spin-polarized atoms that diffuse out of the optical pumping region precess in the ambient magnetic field and are detected by a probe laser. Four such magnetometers, at the corners of a 7 cm square, are configured for gradiometry by feeding back the output of one magnetometer to a field coil to null uniform magnetic field noise at frequencies up to 200 Hz. We present the first measurements of fMCG signals using an atomic magnetometer.

  3. High sensitivity optically pumped quantum magnetometer.

    Science.gov (United States)

    Tiporlini, Valentina; Alameh, Kamal

    2013-01-01

    Quantum magnetometers based on optical pumping can achieve sensitivity as high as what SQUID-based devices can attain. In this paper, we discuss the principle of operation and the optimal design of an optically pumped quantum magnetometer. The ultimate intrinsic sensitivity is calculated showing that optimal performance of the magnetometer is attained with an optical pump power of 20 μW and an operation temperature of 48°C. Results show that the ultimate intrinsic sensitivity of the quantum magnetometer that can be achieved is 327 fT/Hz(½) over a bandwidth of 26 Hz and that this sensitivity drops to 130 pT/Hz(½) in the presence of environmental noise. The quantum magnetometer is shown to be capable of detecting a sinusoidal magnetic field of amplitude as low as 15 pT oscillating at 25 Hz.

  4. Poly-SiGe for MEMS-above-CMOS sensors

    CERN Document Server

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  5. Wideband CMOS receivers

    CERN Document Server

    Oliveira, Luis

    2015-01-01

    This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

  6. MicroCMOS design

    CERN Document Server

    Song, Bang-Sup

    2011-01-01

    MicroCMOS Design covers key analog design methodologies with an emphasis on analog systems that can be integrated into systems-on-chip (SoCs). Starting at the transistor level, this book introduces basic concepts in the design of system-level complementary metal-oxide semiconductors (CMOS). It uses practical examples to illustrate circuit construction so that readers can develop an intuitive understanding rather than just assimilate the usual conventional analytical knowledge. As SoCs become increasingly complex, analog/radio frequency (RF) system designers have to master both system- and tran

  7. Nuclear quantum-assisted magnetometer

    Science.gov (United States)

    Häberle, Thomas; Oeckinghaus, Thomas; Schmid-Lorch, Dominik; Pfender, Matthias; de Oliveira, Felipe Fávaro; Momenzadeh, Seyed Ali; Finkler, Amit; Wrachtrup, Jörg

    2017-01-01

    Magnetic sensing and imaging instruments are important tools in biological and material sciences. There is an increasing demand for attaining higher sensitivity and spatial resolution, with implementations using a single qubit offering potential improvements in both directions. In this article we describe a scanning magnetometer based on the nitrogen-vacancy center in diamond as the sensor. By means of a quantum-assisted readout scheme together with advances in photon collection efficiency, our device exhibits an enhancement in signal to noise ratio of close to an order of magnitude compared to the standard fluorescence readout of the nitrogen-vacancy center. This is demonstrated by comparing non-assisted and assisted methods in a T1 relaxation time measurement.

  8. A ocean bottom vector magnetometer

    Science.gov (United States)

    Wang, Xiaomei; Teng, Yuntian; Wang, Chen; Ma, Jiemei

    2017-04-01

    The new development instrument with a compact spherical coil system and Overhauser magnetometer for measuring the total strength of the magnetic field and the vectors of strength, Delta inclination - Delta declination, meanwhile we also use a triaxial fluxgate instrument of the traditional instrument for geomagnetic vector filed measurement. The advantages of this method are be calibrated by each other and get good performances with automatic operation, good stability and high resolution. Firstly, a brief description of the instrument measurement principles and the key technologies are given. The instrument used a spherical coil system with 34 coils to product the homogeneous volume inside the coils which is large enough to accommodate the sensor of Overhauser total field sensor; the rest of the footlocker-sized ocean-bottom vector magnetometer consists of equipment to run the sensors and records its data (batteries and a data logger), weight to sink it to the sea floor, a remote-controlled acoustic release and flotation to bring the instrument back to the surface. Finally, the accuracy of the instrument was tested in the Geomagnetic station, and the measurement accuracies of total strength and components were better than 0.2nT and 1nT respectively. The figure 1 shows the development instrument structure. it includes six thick glass spheres which protect the sensor, data logger and batteries from the pressures of the deep sea, meanwhile they also provide recycling positive buoyancy; To cushion the glass, the spheres then go inside yellow plastic "hardhats". The triaxial fluxgate is inside No.1 glass spheres, data logger and batteries are inside No.2 glass spheres, the new vector sensor is inside No.3 glass spheres, acoustic communication unit is inside No.4 glass spheres, No.5 and No.6 glass spheres are empty which only provide recycling positive buoyancy. The figure 2 shows the development instrument Physical photo.

  9. Silent Localization of Underwater Sensors Using Magnetometers

    Science.gov (United States)

    Callmer, Jonas; Skoglund, Martin; Gustafsson (Eurasipmember), Fredrik

    2010-12-01

    Sensor localization is a central problem for sensor networks. If the sensor positions are uncertain, the target tracking ability of the sensor network is reduced. Sensor localization in underwater environments is traditionally addressed using acoustic range measurements involving known anchor or surface nodes. We explore the usage of triaxial magnetometers and a friendly vessel with known magnetic dipole to silently localize the sensors. The ferromagnetic field created by the dipole is measured by the magnetometers and is used to localize the sensors. The trajectory of the vessel and the sensor positions are estimated simultaneously using an Extended Kalman Filter (EKF). Simulations show that the sensors can be accurately positioned using magnetometers.

  10. Multi-sensor magnetoencephalography with atomic magnetometers

    Science.gov (United States)

    Johnson, Cort N.; Schwindt, P. D. D.; Weisend, M.

    2013-09-01

    The authors have detected magnetic fields from the human brain with two independent, simultaneously operating rubidium spin-exchange-relaxation-free magnetometers. Evoked responses from auditory stimulation were recorded from multiple subjects with two multi-channel magnetometers located on opposite sides of the head. Signal processing techniques enabled by multi-channel measurements were used to improve signal quality. This is the first demonstration of multi-sensor atomic magnetometer magnetoencephalography and provides a framework for developing a non-cryogenic, whole-head magnetoencephalography array for source localization.

  11. Low Temperature PureB Technology for CMOS Compatible Photodetectors

    NARCIS (Netherlands)

    Mohammadi, V.

    2015-01-01

    In this thesis, conventional high temperature (HT, 700 °C) PureB technology is optimized in order to fabricate detectors with improved key parameters such as the spatial uniformity of the responsivity. A novel technology for low temperature (LT, 400 °C) boron deposition is developed providing a unif

  12. Electronic devices fabricated at CMOS backend-compatible temperatures

    NARCIS (Netherlands)

    Brunets, Ihor

    2009-01-01

    The number of transistors in integrated circuits is exponentially increasing over time, as predicted by Gordon Moore in the 1960s (e.g. 781 million transistors in the current Intel Xeon processor). This leads to higher computing power at a reduced cost per function. However, the future scaling persp

  13. Single particle detection in CMOS compatible photonic crystal nanobeam cavities.

    Science.gov (United States)

    Quan, Qimin; Floyd, Daniel L; Burgess, Ian B; Deotare, Parag B; Frank, Ian W; Tang, Sindy K Y; Ilic, Rob; Loncar, Marko

    2013-12-30

    We report the label-free detection of single particles using photonic crystal nanobeam cavities fabricated in silicon-on-insulator platform, and embedded inside microfluidic channels fabricated in poly-dimethylsiloxane (PDMS). Our system operates in the telecommunication wavelength band, thus leveraging the widely available, robust and tunable telecom laser sources. Using this approach, we demonstrated the detection of polystyrene nanoparticles with dimensions down to 12.5nm in radius. Furthermore, binding events of a single streptavidin molecule have been observed.

  14. High-speed polysilicon CMOS photodetector for telecom and datacom

    Science.gov (United States)

    Atabaki, Amir H.; Meng, Huaiyu; Alloatti, Luca; Mehta, Karan K.; Ram, Rajeev J.

    2016-09-01

    Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow ("zero-change" CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysilicon is demonstrated with a strong electric field to enable efficient photo-carrier extraction and high-speed operation. This photodetector has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.

  15. First experimental results on CMOS Integrated Nickel Electroplated Resonators

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Hansen, Ole

    2004-01-01

    This paper presents experimental results on MEMS metallic add-on post-fabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation of the electri......This paper presents experimental results on MEMS metallic add-on post-fabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation...... of the electrical parameters of n-channel and p-channel transistors. The magnetron sputtering technique is shown to be compatible with standard CMOS electronics without any restriction of the metal types and annealing requirements....

  16. Digitalization of highly precise fluxgate magnetometers

    DEFF Research Database (Denmark)

    Cerman, Ales; Kuna, A.; Ripka, P.

    2005-01-01

    allowing configurations with modulator inside and outside the feedback loop. The last principle is demonstrated on the project of the fully digital fluxgate magnetometer based on the digital signal processor (DSP). The results of the presented projects are compared with recently published competitive......This paper describes the theory behind all three known ways of digitalizing the fluxgate magnetometers: analogue magnetometers with digitalized output using high resolution ADC, application of the delta-sigma modulation to the sensor feedback loop and fully digital signal detection. At present time...... the Delta-Sigma ADCs are mostly used for the digitalization of the highly precise fluxgate magnetorneters. The relevant part of the paper demonstrates some pitfalls of their application studied during the design of the magnetometer for the new Czech scientific satellite MIMOSA. The part discussing...

  17. Magnetometer Data recovered from 35mm film

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The L57 CDMP recovery project takes magnetometer data on 35mm film stored at the archive's climate controlled warehouse and digitizes them.

  18. Optically-Modulated Miniature Magnetometer (OMMM) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Design, fabricate, and calibrate a compact helium magnetometer for high-accuracy measurements of Earth’s magnetic field Provide vector and scalar measurements...

  19. Digital Detection and feedback Fluxgate Magnetometer

    DEFF Research Database (Denmark)

    Piil-Henriksen, J.; Merayo, José M.G.; Nielsen, Otto V;

    1996-01-01

    A new full Earth's field dynamic feedback fluxgate magnetometer is described. It is based entirely on digital signal processing and digital feedback control, thereby replacing the classical second harmonic tuned analogue electronics by processor algorithms. Discrete mathematical cross...

  20. Observatory Magnetometer In-Situ Calibration

    Directory of Open Access Journals (Sweden)

    A Marusenkov

    2011-07-01

    Full Text Available An experimental validation of the in-situ calibration procedure, which allows estimating parameters of observatory magnetometers (scale factors, sensor misalignment without its operation interruption, is presented. In order to control the validity of the procedure, the records provided by two magnetometers calibrated independently in a coil system have been processed. The in-situ estimations of the parameters are in very good agreement with the values provided by the coil system calibration.

  1. Spectral measurement using IC-compatible linear variable optical filter

    NARCIS (Netherlands)

    Emadi, A.; Grabarnik, S.; Wu, H.; De Graaf, G.; Hedsten, K.; Enoksson, P.; Correia, J.H.; Wolffenbuttel, R.F.

    2010-01-01

    This paper reports on the functional and spectral characterization of a microspectrometer based on a CMOS detector array covered by an IC-Compatible Linear Variable Optical Filter (LVOF). The Fabry-Perot LVOF is composed of 15 dielectric layers with a tapered middle cavity layer, which has been

  2. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  3. Micromachined high-performance RF passives in CMOS substrate

    Science.gov (United States)

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-11-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications.

  4. Building strong partnerships with CMOs.

    Science.gov (United States)

    Dye, Carson F

    2014-07-01

    CFOs and chief medical officers (CMOs) can build on common traits to form productive partnerships in guiding healthcare organizations through the changes affecting the industry. CFOs can strengthen bonds with CMOs by taking steps to engage physicians on their own turf--by visiting clinical locations and attending medical-executive committee meetings, for example. Steps CFOs can take to help CMOs become more acquainted with the financial operations of health systems include demonstrating the impact of clinical decisions on costs and inviting CMOs to attend finance-related meetings.

  5. Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

    Science.gov (United States)

    Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

    2008-11-01

    This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

  6. Solar cells on CMOS chips as energy harvesters - integration and CMOS compatibility

    NARCIS (Netherlands)

    Lu, Jiwu

    2011-01-01

    Energy harvesting is an interesting topic in the 21st century for electrical engineers from both industry and academia. It will be a core technology for autonomous wireless networks, which is the essential component of the long-lived ubiquitous computing world. There are different ways to achieve th

  7. Automatic magnetometer calibration with small space coverage

    Science.gov (United States)

    Wahdan, Ahmed

    The use of a standalone Global Navigation Satellite System (GNSS) has proved to be insufficient when navigating indoors or in urban canyons due to multipath or obstruction. Recent technological advances in low cost micro-electro-mechanical system (MEMS) -- based sensors (like accelerometers, gyroscopes and magnetometers) enabled the development of sensor-based navigation systems. Although MEMS sensors are low-cost, lightweight, small size, and have low-power consumption, they have complex error characteristics. Accurate computation of the heading angle (azimuth) is one of the most important aspects of any navigation system. It can be computed either by gyroscopes or magnetometers. Gyroscopes are inertial sensors that can provide the angular rate from which the heading can be calculated, however, their outputs drift with time. Moreover, the accumulated errors due to mathematical integration, performed to obtain the heading angle, lead to large heading errors. On the other hand, magnetometers do not suffer from drift and the calculation of heading does not suffer from error accumulation. They can provide an absolute heading from the magnetic north by sensing the earth's magnetic field. However, magnetometer readings are usually affected by magnetic fields, other than the earth magnetic field, and by other error sources; therefore magnetometer calibration is required to use magnetometer as a reliable source of heading in navigation applications. In this thesis, a framework for fast magnetometer calibration is proposed. This framework requires little space coverage with no user involvement in the calibration process, and does not need specific movements to be performed. The proposed techniques are capable of performing both 2-dimensional (2D) and 3-dimensional (3D) calibration for magnetometers. They are developed to consider different scenarios suitable for different applications, and can benefit from natural device movements. Some applications involve tethering the

  8. Spaced-based search coil magnetometers

    Science.gov (United States)

    Hospodarsky, George B.

    2016-12-01

    Search coil magnetometers are one of the primary tools used to study the magnetic component of low-frequency electromagnetic waves in space. Their relatively small size, mass, and power consumption, coupled with a good frequency range and sensitivity, make them ideal for spaceflight applications. The basic design of a search coil magnetometer consists of many thousands of turns of wire wound on a high permeability core. When a time-varying magnetic field passes through the coil, a time-varying voltage is induced due to Faraday's law of magnetic induction. The output of the coil is usually attached to a preamplifier, which amplifies the induced voltage and conditions the signal for transmission to the main electronics (usually a low-frequency radio receiver). Search coil magnetometers are usually used in conjunction with electric field antenna to measure electromagnetic plasma waves in the frequency range of a few hertz to a few tens of kilohertzs. Search coil magnetometers are used to determine the properties of waves, such as comparing the relative electric and magnetic field amplitudes of the waves, or to investigate wave propagation parameters, such as Poynting flux and wave normal vectors. On a spinning spacecraft, they are also sometimes used to determine the background magnetic field. This paper presents some of the basic design criteria of search coil magnetometers and discusses design characteristics of sensors flown on a number of spacecraft.

  9. Analytical balance-based Faraday magnetometer

    Science.gov (United States)

    Riminucci, Alberto; Uhlarz, Marc; De Santis, Roberto; Herrmannsdörfer, Thomas

    2017-03-01

    We introduce a Faraday magnetometer based on an analytical balance in which we were able to apply magnetic fields up to 0.14 T. We calibrated it with a 1 mm Ni sphere previously characterized in a superconducting quantum interference device (SQUID) magnetometer. The proposed magnetometer reached a theoretical sensitivity of 3 × 10-8 A m2. We demonstrated its operation on magnetic composite scaffolds made of poly(ɛ-caprolactone)/iron-doped hydroxyapatite. To confirm the validity of the method, we measured the same scaffold properties in a SQUID magnetometer. The agreement between the two measurements was within 5% at 0.127 T and 12% at 24 mT. With the addition, for a small cost, of a permanent magnet and computer controlled linear translators, we were thus able to assemble a Faraday magnetometer based on an analytical balance, which is a virtually ubiquitous instrument. This will make simple but effective magnetometry easily accessible to most laboratories, in particular, to life sciences ones, which are increasingly interested in magnetic materials.

  10. A photovoltaic-driven and energy-autonomous CMOS implantable sensor.

    Science.gov (United States)

    Ayazian, Sahar; Akhavan, Vahid A; Soenen, Eric; Hassibi, Arjang

    2012-08-01

    An energy-autonomous, photovoltaic (PV)-driven and MRI-compatible CMOS implantable sensor is presented. On-chip P+/N-well diode arrays are used as CMOS-compatible PV cells to harvest μW's of power from the light that penetrates into the tissue. In this 2.5 mm × 2.5 mm sub-μW integrated system, the in-vivo physiological signals are first measured by using a subthreshold ring oscillator-based sensor, the acquired data is then modulated into a frequency-shift keying (FSK) signal, and finally transmitted neuromorphically to the skin surface by using a pair of polarized electrodes.

  11. A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector

    NARCIS (Netherlands)

    Lee, M.J.; Youn, J.S.; Park, K.Y.; Choi, W.Y.

    2014-01-01

    We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche ph

  12. A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector

    NARCIS (Netherlands)

    Lee, M.J.; Youn, J.S.; Park, K.Y.; Choi, W.Y.

    2014-01-01

    We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche ph

  13. Structured Analog CMOS Design

    CERN Document Server

    Stefanovic, Danica

    2008-01-01

    Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The proposed transistor-level design procedure is based on the EKV modeling approach and relies on the device inversion level as a fundament

  14. NMR detection with an atomic magnetometer

    CERN Document Server

    Savukov, I M

    2004-01-01

    We demonstrate detection of NMR signals using a non-cryogenic atomic magnetometer and describe several novel applications of this technique. A water free induction decay (FID) signal in a 0.5 $\\mu$T field is detected using a spin-exchange-relaxation-free K magnetometer and the possibility of using a multi-channel magnetometer for 3-D MRI requiring only a single FID signal is described. We also demonstrate detection of less than $10^{13}$ $^{129}$Xe atoms whose NMR signal is enhanced by a factor of 540 due to Fermi-contact interaction with K atoms. This technique allows detection of less than $10^{9}$ $^{129}$Xe spins in a flowing system suitable for remote NMR applications.

  15. MAGDAS I and II Magnetometers in Peru

    Science.gov (United States)

    Choque, Ed.; Ishitsuka, J.; Yumoto, K.; Veliz, O.; Rosales, D.

    2014-01-01

    The Department of Terrestrial Magnetism of the Car negie Institution of Washington founded in 1919 the Huancayo Observatory, in Peru (Lat. -12.060, Long - 75.210) and installed a classical magnetometer which has provided a long standing flow of data since March 1st, 1922. Today, there are 10 magnetometers in operation in Peru. On October 13th, 2006, Space Environment Research Center - SERC of Kyushu University installed a new Magnetic Dat a Acquisition System MAGDAS I (PI; Prof. K. Yumoto) at Ancon Observatory (Geographic Latitude: -11.790, Longitude: - 77.160 and Geomagnetic Latitude (2000): 3.100 and Longitude (2000): 354.660). On July 13th, 2011, SERC installed a MAGDAS II at Ica Solar Station (Geographic Latitude: - 140 04' Longitude: -750 44'). Details of the magnetometer that we are hosting will be explained in this presentation.

  16. Silent Localization of Underwater Sensors Using Magnetometers

    Directory of Open Access Journals (Sweden)

    Jonas Callmer

    2010-01-01

    Full Text Available Sensor localization is a central problem for sensor networks. If the sensor positions are uncertain, the target tracking ability of the sensor network is reduced. Sensor localization in underwater environments is traditionally addressed using acoustic range measurements involving known anchor or surface nodes. We explore the usage of triaxial magnetometers and a friendly vessel with known magnetic dipole to silently localize the sensors. The ferromagnetic field created by the dipole is measured by the magnetometers and is used to localize the sensors. The trajectory of the vessel and the sensor positions are estimated simultaneously using an Extended Kalman Filter (EKF. Simulations show that the sensors can be accurately positioned using magnetometers.

  17. Temperature dependence of DC SQUID magnetometer performances

    Energy Technology Data Exchange (ETDEWEB)

    Granata, C. E-mail: c.granata@cib.na.cnr.it; Monaco, A.; Di Russo, C.; Lissitski, M.P.; Russo, M

    2004-05-01

    We report experimental results on temperature dependence of the main characteristics of fully integrated DC SQUID magnetometers realized on niobium technology. At T=4.2 K the sensor shown a white magnetic field noise spectral density of 2.9 fT/Hz{sup 1/2}. A slow increase of the field noise (about 20%) was observed with increasing temperature up to 5 K, giving a considerable tolerance of the working temperature of niobium magnetometers in some innovative multichannel systems for magnetoencephalography.

  18. CPT Magnetometer with Atomic Energy Level Modulation

    Institute of Scientific and Technical Information of China (English)

    LIU Guo-Bin; DU Run-Chang; LIU Chao-Yang; GU Si-Hong

    2008-01-01

    We propose and experimentally investigate a coherent population trapping state based magnetometer prototype with87 Rb atoms.Through modulating Zeeman sublevels with an ac magnetic field,not only a phase sensitive detection scheme suitable for miniature magnetometer is realized,but also the detection resolution of magnetic field intensity could be improved by a factor of two.Our study result indicates that it is a promising low power consumption miniature sensitive low magnetic field sensor offering spatially resolved measurement at the sub-millimetre level.

  19. Planar pixel sensors in commercial CMOS technologies

    Energy Technology Data Exchange (ETDEWEB)

    Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn, Nussallee 12, 53115 Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany)

    2015-07-01

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  20. Diffusive Suppression of AC-Stark Shifts in Atomic Magnetometers

    CERN Document Server

    Sulai, I A; Kauer, M; Smetana, G S; Wakai, R T; Walker, T G

    2012-01-01

    In atomic magnetometers, the vector AC-Stark shift associated with circularly polarized light generates spatially varying effective magnetic fields which limit the magnetometer response and serve as sources of noise. We describe a scheme whereby optically pumping a small sub-volume of the magnetometer cell and relying on diffusion to transport polarized atoms allows a magnetometer to be operated with minimal sensitivity to the AC-Stark field.

  1. A compact, high performance atomic magnetometer for biomedical applications.

    Science.gov (United States)

    Shah, Vishal K; Wakai, Ronald T

    2013-11-21

    We present a highly sensitive room-temperature atomic magnetometer (AM), designed for use in biomedical applications. The magnetometer sensor head is only 2 × 2 × 5 cm3 and is constructed using readily available, low-cost optical components. The magnetic field resolution of the AM is magnetometers. We present side-by-side comparisons between our AM and a SQUID magnetometer, and show that equally high quality magnetoencephalography and magnetocardiography recordings can be obtained using our AM.

  2. Anatomical MRI with an atomic magnetometer.

    Science.gov (United States)

    Savukov, I; Karaulanov, T

    2013-06-01

    Ultra-low field (ULF) MRI is a promising method for inexpensive medical imaging with various additional advantages over conventional instruments such as low weight, low power, portability, absence of artifacts from metals, and high contrast. Anatomical ULF MRI has been successfully implemented with SQUIDs, but SQUIDs have the drawback of a cryogen requirement. Atomic magnetometers have sensitivity comparable to SQUIDs and can be in principle used for ULF MRI to replace SQUIDs. Unfortunately some problems exist due to the sensitivity of atomic magnetometers to a magnetic field and gradients. At low frequency, noise is also substantial and a shielded room is needed for improving sensitivity. In this paper, we show that at 85 kHz, the atomic magnetometer can be used to obtain anatomical images. This is the first demonstration of any use of atomic magnetometers for anatomical MRI. The demonstrated resolution is 1.1 mm×1.4 mm in about 6 min of acquisition with SNR of 10. Some applications of the method are discussed. We discuss several measures to increase the sensitivity to reach a resolution 1 mm×1 mm.

  3. Flux-gate magnetometer for Mars exploration

    Science.gov (United States)

    Zhao, Hua; Zhu, G. W.; Yu, P.; Wang, J. D.; Yu, M. F.; Li, L.; Sun, Y. Q.; Chen, S. W.; Liao, H. Z.; Zhou, B.; Feng, Y. Y.

    2008-10-01

    A micro-satellite, Yinghuo-1, would be launched with Russian spacecraft, Phobos-Grunt in October, 2009 to investigate the space environment around Mars. YH-1 and Phobos-Grunt forms a two-point measurement configuration in the Martian space environment. YH-1 and Phobos-Grunt are equipped with similar magnetic field and plasma detecting payload on two spacecraft would give some coordinated exploration around Mars. YH-1 would orbit Mars with periapsis of 800 km above the Martian surface, and apoapsis about 80000km to the center of Mars. The orbit inclination is in the range of 0~7° to the Martian equator. A flux-gate type magnetometer, with two tri-axial sensors, is developed for YH-1 spacecraft. Two sensors are mounted on one-side of the deployable solar panel with a radial separation about 45cm to function as a gradiometer to minimize the affects of platform remanence. The dynamic range of the magnetometer is +/-256nT with a 16-bit ADC converter, and the noise level is better than 0.01nT/√Hz, to measure three-component magnetic field from DC to 10Hz. Flux-gate magnetometer would work together with the Plasma Package onboard of YH-1 to investigate the Martian bow shock, magnetosheath, magnetic pileup region (MPR). A detail description of the flux-gate magnetometer is presented in this paper, with test and calibration results.

  4. Calibration of the fluxgate CSC vector magnetometers

    DEFF Research Database (Denmark)

    Merayo, José M.G.; Risbo, Torben; Primdahl, Fritz

    1995-01-01

    This report shows the results of the calibration of the flight and flight spare CSC magnetometers for the Ørsted satellite. The instrument shows an outstanding behavior as regards of both constant temperature and temperature dependance. Neither transverse effects nor non-linear terms have been fo...

  5. Anatomical MRI with an atomic magnetometer

    CERN Document Server

    Savukov, I

    2012-01-01

    Ultra-low field (ULF) MRI is a promising method for inexpensive medical imaging with various additional advantages over conventional instruments such as low weight, low power, portability, absence of artifacts from metals, and high contrast. Anatomical ULF MRI has been successfully implemented with SQUIDs, but SQUIDs have the drawback of cryogen requirement. Atomic magnetometers have sensitivity comparable to SQUIDs and can be in principle used for ULF MRI to replace SQUIDs. Unfortunately some problems exist due to the sensitivity of atomic magnetometers to magnetic field and gradients. At low frequency, noise is also substantial and a shielded room is needed for improving sensitivity. In this paper, we show that at 85 kHz, the atomic magnetometer can be used to obtain anatomical images. This is the first demonstration of any use of atomic magnetometers for anatomical MRI. The demonstrated resolution is 1.1x1.4 mm2 in about six minutes of acquisition with SNR of 10. Some applications of the method are discuss...

  6. Method of performing MRI with an atomic magnetometer

    Science.gov (United States)

    Savukov, Igor Mykhaylovich; Matlashov, Andrei Nikolaevich; Espy, Michelle A; Volegov, Petr Lvovich; Kraus, Jr., Robert Henry; Zotev, Vadim Sergeyevich

    2013-08-27

    A method and apparatus are provided for performing an in-situ magnetic resonance imaging of an object. The method includes the steps of providing an atomic magnetometer, coupling a magnetic field generated by magnetically resonating samples of the object through a flux transformer to the atomic magnetometer and measuring a magnetic resonance of the atomic magnetometer.

  7. A CMOS Morlet Wavelet Generator

    Directory of Open Access Journals (Sweden)

    A. I. Bautista-Castillo

    2017-04-01

    Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

  8. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Affolder, A.; Buckland, M.; Meng, L. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I. [Department of Physics, Oxford University, Oxford (United Kingdom); and others

    2016-09-21

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  9. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    Science.gov (United States)

    Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

    2016-09-01

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  10. CMOS-Based Biosensor Arrays

    CERN Document Server

    Thewes, R; Schienle, M; Hofmann, F; Frey, A; Brederlow, R; Augustyniak, M; Jenkner, M; Eversmann, B; Schindler-Bauer, P; Atzesberger, M; Holzapfl, B; Beer, G; Haneder, T; Hanke, H -C

    2011-01-01

    CMOS-based sensor array chips provide new and attractive features as compared to today's standard tools for medical, diagnostic, and biotechnical applications. Examples for molecule- and cell-based approaches and related circuit design issues are discussed.

  11. Comparators in nanometer CMOS technology

    CERN Document Server

    Goll, Bernhard

    2015-01-01

    This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties. Starting from the basics of comparators and the transistor characteristics in nanometer CMOS, seven high-performance comparators developed by the authors in 120nm and 65nm CMOS are described extensively. Methods and measurement circuits for the characterization of advanced comparators are introduced. A synthesis of the largely differing aspects of demands on modern comparators and the properties of devices being available in nanometer CMOS, which are posed by the so-called nanometer hell of physics, is accomplished. The book summarizes the state of the art in integrated comparators. Advanced measurement circuits for characterization will be introduced as well as the method of characterization by bit-error analysis usually being used for characterization of optical receivers. ...

  12. A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.

    Science.gov (United States)

    Lee, Myung-Jae; Youn, Jin-Sung; Park, Kang-Yeob; Choi, Woo-Young

    2014-02-10

    We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

  13. CMOS array design automation techniques

    Science.gov (United States)

    Lombardi, T.; Feller, A.

    1976-01-01

    The design considerations and the circuit development for a 4096-bit CMOS SOS ROM chip, the ATL078 are described. Organization of the ATL078 is 512 words by 8 bits. The ROM was designed to be programmable either at the metal mask level or by a directed laser beam after processing. The development of a 4K CMOS SOS ROM fills a void left by available ROM chip types, and makes the design of a totally major high speed system more realizable.

  14. CMOS Nonlinear Signal Processing Circuits

    OpenAIRE

    2010-01-01

    The chapter describes various nonlinear signal processing CMOS circuits, including a high reliable WTA/LTA, simple MED cell, and low-voltage arbitrary order extractor. We focus the discussion on CMOS analog circuit design with reliable, programmable capability, and low voltage operation. It is a practical problem when the multiple identical cells are required to match and realized within a single chip using a conventional process. Thus, the design of high-reliable circuit is indeed needed. Th...

  15. Low Power CMOS Analog Multiplier

    Directory of Open Access Journals (Sweden)

    Shipra Sachan

    2015-12-01

    Full Text Available In this paper Low power low voltage CMOS analog multiplier circuit is proposed. It is based on flipped voltage follower. It consists of four voltage adders and a multiplier core. The circuit is analyzed and designed in 0.18um CMOS process model and simulation results have shown that, under single 0.9V supply voltage, and it consumes only 31.8µW quiescent power and 110MHZ bandwidth.

  16. Complete Tri-Axis Magnetometer Calibration with a Gyro Auxiliary.

    Science.gov (United States)

    Yang, Deng; You, Zheng; Li, Bin; Duan, Wenrui; Yuan, Binwen

    2017-05-26

    Magnetometers combined with inertial sensors are widely used for orientation estimation, and calibrations are necessary to achieve high accuracy. This paper presents a complete tri-axis magnetometer calibration algorithm with a gyro auxiliary. The magnetic distortions and sensor errors, including the misalignment error between the magnetometer and assembled platform, are compensated after calibration. With the gyro auxiliary, the magnetometer linear interpolation outputs are calculated, and the error parameters are evaluated under linear operations of magnetometer interpolation outputs. The simulation and experiment are performed to illustrate the efficiency of the algorithm. After calibration, the heading errors calculated by magnetometers are reduced to 0.5° (1σ). This calibration algorithm can also be applied to tri-axis accelerometers whose error model is similar to tri-axis magnetometers.

  17. Magnetometer Searches for Ultra Low Mass Fields

    Science.gov (United States)

    Romalis, Michael

    2017-01-01

    New spin interactions arise in a variety of extensions to the Standard Model. Well-known spin-dependent effects, such as permanent electric dipole moments and violations of Lorentz and CPT symmetries, have been searched for in many experiments. The existence of low-mass axion-like particles would also generate spin-dependent effects that can be searched for in similar experiments, but often with unique signatures. Since particles with spin also have a magnetic moment, such experiments are automatically sensitive to ordinary magnetic fields and one of the challenges is to eliminate such effects, using for example, two different spin species in a co-magnetometer arrangement. I will describe several past and on-going experiments using co-magnetometers based on nuclear spin-polarized noble gases. These experiments are used to search for both axion-like dark matter and for axion-mediated forces that are independent of dark matter.

  18. A Web Server for MACCS Magnetometer Data

    Science.gov (United States)

    Engebretson, Mark J.

    1998-01-01

    NASA Grant NAG5-3719 was provided to Augsburg College to support the development of a web server for the Magnetometer Array for Cusp and Cleft Studies (MACCS), a two-dimensional array of fluxgate magnetometers located at cusp latitudes in Arctic Canada. MACCS was developed as part of the National Science Foundation's GEM (Geospace Environment Modeling) Program, which was designed in part to complement NASA's Global Geospace Science programs during the decade of the 1990s. This report describes the successful use of these grant funds to support a working web page that provides both daily plots and file access to any user accessing the worldwide web. The MACCS home page can be accessed at http://space.augsburg.edu/space/MaccsHome.html.

  19. All-optical vector atomic magnetometer.

    Science.gov (United States)

    Patton, B; Zhivun, E; Hovde, D C; Budker, D

    2014-07-04

    We demonstrate an all-optical magnetometer capable of measuring the magnitude and direction of a magnetic field using nonlinear magneto-optical rotation in cesium vapor. Vector capability is added by effective modulation of the field along orthogonal axes and subsequent demodulation of the magnetic-resonance frequency. This modulation is provided by the ac Stark shift induced by circularly polarized laser beams. The sensor exhibits a demonstrated rms noise floor of ∼65  fT/√[Hz] in measurement of the field magnitude and 0.5  mrad/√[Hz] in the field direction; elimination of technical noise would improve these sensitivities to 12  fT/√[Hz] and 10  μrad/√[Hz], respectively. Applications for this all-optical vector magnetometer would include magnetically sensitive fundamental physics experiments, such as the search for a permanent electric dipole moment of the neutron.

  20. A Miniature Wide Band Atomic Magnetometer

    Science.gov (United States)

    2011-12-01

    atomic magnetometer CSAC – Chip scale atomic clock DAC – Digital to Analog Converter DARPA – Defense Advanced Research Projects Agency DBR...Finally, the heater frequencies must not beat with the Laser servo’s modulation. Heater amplifiers This circuit is essentially an audio power...amplifier for the heater waveforms. The heater waveforms are made on the DAC board and then amplified in this circuit. The heater PCB consists of 4

  1. Laser threshold magnetometer reaching attotesla precision

    CERN Document Server

    Jeske, Jan; Greentree, Andrew D

    2016-01-01

    We propose a new type of sensor, which uses diamond containing the optically active nitrogen-vacancy (NV) centres as a laser medium. The magnetometer can be operated at room-temperature and generates light that can be readily fibre coupled, thereby permitting use in industrial applications and remote sensing. By combining laser pumping with a radio-frequency Rabi-drive field, an external magnetic field changes the fluorescence of the NV centres. We use this change in fluorescence level to push the laser above threshold, turning it on with an intensity controlled by the external magnetic field, which provides a coherent amplification of the readout signal with very high contrast. This provides the advantage over conventional NV-based magnetometers which use fluorescence measurements, based on incoherent photon emission, and are currently experimentally limited to few $\\rm{nT}/\\sqrt{\\rm{Hz}}$. By contrast we predict that an NV-based laser threshold magnetometer with a volume of 1mm$^3$ can achieve shot-noise li...

  2. Large area CMOS image sensors

    Science.gov (United States)

    Turchetta, R.; Guerrini, N.; Sedgwick, I.

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  3. CMOS bulk-metal design handbook

    Science.gov (United States)

    Edge, T. M.

    1978-01-01

    User's guide describes techniques for generating precision mask artwork for complex CMOS integrated circuits, starting from logic diagram. Techniques are based on standard-cell approach. Guide also includes user guidelines for designing efficient CMOS arrays.

  4. Weyl compatible tensors

    CERN Document Server

    Mantica, Carlo A

    2012-01-01

    The algebraic condition of Riemann compatibility for symmetric tensors generalizes the differential Codazzi condition, but preserves much of the geometric content. The compatibility condition can be extended to other curvature tensors. This paper is about Weyl compatible tensors and vectors. In particular it is shown that the existence of a Weyl compatible vector implies the Weyl tensor to be algebraically special, and it is a necessary and sufficient condition for the magnetic part to vanish. Some theorems (Derdzinski and Shen, Hall) are extended to the broader hypothesis of Weyl or Riemann compatibility. Weyl compatibility includes conditions that were investigated in the literature of general relativity (as McIntosh et al.). Hypersurfaces of pseudo Euclidean spaces provide a simple example of Weyl compatible Ricci tensor.

  5. The atomic magnetometer: A new era in biomagnetism

    Energy Technology Data Exchange (ETDEWEB)

    Wakai, Ronald T., E-mail: rtwakai@wisc.edu [1005 Wisconsin Institutes for Medical Research, 1111 Highland Avenue, University of Wisconsin-Madison, Madison, Wisconsin 53705 (United States)

    2014-11-07

    The high cost and impracticality of SQUID (Superconducting QUantum Interference Device) magnetometers has limited the expansion of magnetoencephalography (MEG) and magnetocardiography (MCG), especially in countries where the cost of liquid helium is high. A recent breakthrough, however, has the potential to radically change this situation. In 2003, a group at Princeton University demonstrated an atomic magnetometer, known as the SERF (spin-exchange free relaxation) magnetometer, with unprecedented sensitivity. Since then, several research groups have utilized SERF magnetometers to record MEG, MCG, and fetal MCG signals. Despite some modest drawbacks, it now seems almost certain that SERF magnetometers can replace SQUIDs for many applications. With a price tag that is likely to be far less than that of SQUIDs, SERF magnetometers can propel the next wave of growth in biomagnetism.

  6. Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

    Science.gov (United States)

    Akturk, Akin; Potbhare, Siddharth; Goldsman, Neil; Holloway, Michael

    2012-01-01

    Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

  7. A Compact, High Performance Atomic Magnetometer for Biomedical Applications

    CERN Document Server

    Shah, Vishal K

    2013-01-01

    We present a highly sensitive room-temperature atomic magnetometer (AM), designed for use in biomedical applications. The magnetometer sensor head is only 2x2x5 cm^3 and it is constructed using readily available, low-cost optical components. The magnetic field resolution of the AM is <10 fT/sqrt(Hz), which is comparable to cryogenically cooled superconducting quantum interference device (SQUID) magnetometers. We present side-by-side comparisons between our AM and a SQUID magnetometer, and show that equally high quality magnetoencephalography (MEG) and magnetocardiography (MCG) recordings can be obtained using our AM.

  8. Autonomous navigation system based on GPS and magnetometer data

    Science.gov (United States)

    Julie, Thienel K. (Inventor); Richard, Harman R. (Inventor); Bar-Itzhack, Itzhack Y. (Inventor)

    2004-01-01

    This invention is drawn to an autonomous navigation system using Global Positioning System (GPS) and magnetometers for low Earth orbit satellites. As a magnetometer is reliable and always provides information on spacecraft attitude, rate, and orbit, the magnetometer-GPS configuration solves GPS initialization problem, decreasing the convergence time for navigation estimate and improving the overall accuracy. Eventually the magnetometer-GPS configuration enables the system to avoid costly and inherently less reliable gyro for rate estimation. Being autonomous, this invention would provide for black-box spacecraft navigation, producing attitude, orbit, and rate estimates without any ground input with high accuracy and reliability.

  9. Magnetic-field-compensation optical vector magnetometer.

    Science.gov (United States)

    Papoyan, Aram; Shmavonyan, Svetlana; Khanbekyan, Alen; Khanbekyan, Karen; Marinelli, Carmela; Mariotti, Emilio

    2016-02-01

    A concept for an optical magnetometer used for the measurement of magnitude and direction of a magnetic field (B-field) in two orthogonal directions is developed based on double scanning of a B-field to compensate the measured field to zero value, which is monitored by a resonant magneto-optical process in an unshielded atomic vapor cell. Implementation of the technique using the nonlinear Hanle effect on the D2 line of rubidium demonstrates viability and efficiency of the proposed concept. The ways to enhance characteristics of the suggested technique and optimize its performance, as well as the possible extension to three-axis magnetometry, are discussed.

  10. Magnetometer Based on Optoelectronic Microwave Oscillator

    Science.gov (United States)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey

    2005-01-01

    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  11. Automated system for the calibration of magnetometers

    DEFF Research Database (Denmark)

    Petrucha, Vojtech; Kaspar, Petr; Ripka, Pavel

    2009-01-01

    A completely nonmagnetic calibration platform has been developed and constructed at DTU Space (Technical University of Denmark). It is intended for on-site scalar calibration of high-precise fluxgate magnetometers. An enhanced version of the same platform is being built at the Czech Technical Uni...... through custom-made optical incremental sensors. The system is controlled by a microcontroller, which executes commands from a computer. The properties of the system as well as calibration and measurement results will be presented. ©2009 American Institute of Physics...

  12. Approaches to measuring entanglement in chemical magnetometers.

    Science.gov (United States)

    Tiersch, M; Guerreschi, G G; Clausen, J; Briegel, H J

    2014-01-01

    Chemical magnetometers are radical pair systems such as solutions of pyrene and N,N-dimethylaniline (Py-DMA) that show magnetic field effects in their spin dynamics and their fluorescence. We investigate the existence and decay of quantum entanglement in free geminate Py-DMA radical pairs and discuss how entanglement can be assessed in these systems. We provide an entanglement witness and propose possible observables for experimentally estimating entanglement in radical pair systems with isotropic hyperfine couplings. As an application, we analyze how the field dependence of the entanglement lifetime in Py-DMA could in principle be used for magnetometry and illustrate the propagation of measurement errors in this approach.

  13. High Q-factor CMOS-MEMS inductor

    CERN Document Server

    Dai, Ching-Liang; Liu, Mao-Chen

    2008-01-01

    This study investigates a high Q-factor spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process. The spiral inductor is manufactured on silicon substrate using the 0.35 micrometers CMOS process. In order to reduce the substrate loss and enhance the Q-factor of the inductor, silicon substrate under the inductor is removed using a post-process. The post-process uses RIE (reactive ion etching) to etch the sacrificial layer of silicon dioxide, and then TMAH (tetra methyl ammonium hydroxide) is employed to remove the underlying silicon substrate and obtain the suspended spiral inductor. The advantage of the post process is compatible with the CMOS process. The Agilent 8510C network analyzer and a Cascade probe station are used to measure the performances of the spiral inductor. Experiments indicate that the spiral inductor has a Q-factor of 15 at 11 GHz, an inductance of 4 nH at 25.5 GHz and a self-resonance frequency of about 27 GHz.

  14. Advanced CMOS device technologies for 45 nm node and below

    Directory of Open Access Journals (Sweden)

    A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak and S. Biesemans

    2007-01-01

    Full Text Available We review and discuss the latest developments and technology options for 45 nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices. One of the main metal gate (MG candidates for scaled CMOS technologies are fully silicided (FUSI gates. In this work, by means of a selective and controlled poly etch-back integration process, dual work-function Ni-based FUSI/HfSiON CMOS circuits with record ring oscillator performance (high-VT are reported (17 ps at VDD=1.1 V and 20 pA/μm Ioff, meeting the ITRS 45 nm node requirement for low-power (LP CMOS. Compatibility of FUSI and other MG with known stress boosters like stressed CESL (contact-etch-stop-layer with high intrinsic stress or embedded SiGe in the pMOS S/D regions is validated. To obtain MuGFET devices that are competitive, as compared to conventional planar bulk devices, and that meet the stringent drive and leakage current requirements for the 32 nm node and beyond, higher channel mobilities are required. Results obtained by several strain engineering methods are presented here.

  15. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  16. A CMOS Switched Transconductor Mixer

    NARCIS (Netherlands)

    Klumperink, Eric A.M.; Louwsma, S.M.; Wienk, Gerhardus J.M.; Nauta, Bram

    A new CMOS active mixer topology can operate at low supply voltages by the use of switches exclusively connected to the supply voltages. Such switches require less voltage headroom and avoid gate-oxide reliability problems. Mixing is achieved by exploiting two transconductors with cross-coupled

  17. Digital Fluxgate Magnetometer for Detection of Microvibration

    Directory of Open Access Journals (Sweden)

    Menghui Zhi

    2017-01-01

    Full Text Available In engineering practice, instruments, such as accelerometer and laser interferometer, are widely used in vibration measurement of structural parts. A method for using a triaxial fluxgate magnetometer as a microvibration sensor to measure low-frequency pendulum microvibration (not translational vibration is proposed in this paper, so as to detect vibration from low-frequency vibration sources, such as large rotating machine, large engineering structure, earthquake, and microtremor. This method provides vibration detection based on the environmental magnetic field signal to avoid increased measurement difficulty and error due to different relative positions of permanent magnet and magnetometer on the device under test (DUT when using the original magnetic measurement method. After fixedly connecting the fluxgate probe with the DUT during the test, the angular displacement due to vibration can be deduced by measuring the geomagnetic field’s magnetic induction intensity change on the orthogonal three components during the vibration. The test shows that the microvibration sensor has angular resolution of over 0.05° and maximum measuring frequency of 64 Hz. As an exploring test aimed to detect the microvibration of earth-orbiting satellite in the in-orbit process, the simulation experiment successfully provides the real-time microvibration information for attitude and orbit control subsystem.

  18. The Search Coil Magnetometer for THEMIS

    Science.gov (United States)

    Roux, A.; Le Contel, O.; Coillot, C.; Bouabdellah, A.; de La Porte, B.; Alison, D.; Ruocco, S.; Vassal, M. C.

    2008-12-01

    THEMIS instruments incorporate a tri-axial Search Coil Magnetometer (SCM) designed to measure the magnetic components of waves associated with substorm breakup and expansion. The three search coil antennas cover the same frequency bandwidth, from 0.1 Hz to 4 kHz, in the ULF/ELF frequency range. They extend, with appropriate Noise Equivalent Magnetic Induction (NEMI) and sufficient overlap, the measurements of the fluxgate magnetometers. The NEMI of the searchcoil antennas and associated pre-amplifiers is smaller than 0.76 pT /sqrt{Hz} at 10 Hz. The analog signals produced by the searchcoils and associated preamplifiers are digitized and processed inside the Digital Field Box (DFB) and the Instrument Data Processing Unit (IDPU), together with data from the Electric Field Instrument (EFI). Searchcoil telemetry includes waveform transmission, FFT processed data, and data from a filter bank. The frequency range covered depends on the available telemetry. The searchcoils and their three axis structures have been precisely calibrated in a calibration facility, and the calibration of the transfer function is checked on board, usually once per orbit. The tri-axial searchcoils implemented on the five THEMIS spacecraft are working nominally.

  19. CMOS VLSI Active-Pixel Sensor for Tracking

    Science.gov (United States)

    Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

    2004-01-01

    An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

  20. Cryogenic magnetometer research at Twente University of Technology

    NARCIS (Netherlands)

    ter Brake, Hermanus J.M.; Flokstra, Jakob

    1984-01-01

    In 1982 we started the project ‘Cryogenic Magnetometers’ with the aim to develop SQUID-magnetometers appropriate to a large variety of applications. The first system we developed is a SQUID-magnetometer with an open-ended horizontal access at room temperature. The measuring space inside the pick-up

  1. Digital fluxgate magnetometer for the "Astrid-2" satellite

    DEFF Research Database (Denmark)

    Pedersen, Erik Bøje; Primdahl, Fritz; Petersen, Jan Raagaard

    1999-01-01

    The design and performance of the Astrid-2 magnetometer are described. The magnetometer uses mathematical routines implemented by software for commercially available digital dignal processors to determine the magnetic field from the fluxgate sensor. The sensor is from the latest generation of amo...

  2. All-optical, Three-axis Fiber Laser Magnetometer

    Science.gov (United States)

    2012-04-16

    E-1 1.  INTRODUCTION ...achieved with other magnetic field sensing technologies such as those based on flux gates and fiber optic magnetostrictive sensors. The deployed...ALL-OPTICAL, THREE-AXIS FIBER LASER MAGNETOMETER 1. INTRODUCTION This report describes the development of an undersea fiber optic magnetometer

  3. Internet Access to ISEE-1 and 2 Magnetometer Data

    Science.gov (United States)

    1997-01-01

    It is reported that the entire ISEE-1 and -2 magnetometer data are placed on-line, using an 8 Gbyte disk drive. The data are stored at 4-s and 60-s resolution. Also, an interactive world wide web page, which allows to plot, on request, any interval for which magnetometer data are available, is developed.

  4. Analysing Harmonic Motions with an iPhone's Magnetometer

    Science.gov (United States)

    Yavuz, Ahmet; Temiz, Burak Kagan

    2016-01-01

    In this paper, we propose an experiment for analysing harmonic motion using an iPhone's (or iPad's) magnetometer. This experiment consists of the detection of magnetic field variations obtained from an iPhone's magnetometer sensor. A graph of harmonic motion is directly displayed on the iPhone's screen using the "Sensor Kinetics"…

  5. A hysteresis model for an orthogonal thin-film magnetometer

    NARCIS (Netherlands)

    Ridder, de René M.; Fluitman, Jan H.

    1990-01-01

    The operation of a ferromagnetic thin-film magnetometer using the anisotropic magnetoresistance effect in a permalloy film is discussed. Measurements showed the presence of a hysteresis effect not predicted by available models. It is shown that the sensitivity of the magnetometer is predicted by app

  6. Cryogenic magnetometer research at Twente University of Technology

    NARCIS (Netherlands)

    Brake, ter H.J.M.; Flokstra, J.

    1984-01-01

    In 1982 we started the project ‘Cryogenic Magnetometers’ with the aim to develop SQUID-magnetometers appropriate to a large variety of applications. The first system we developed is a SQUID-magnetometer with an open-ended horizontal access at room temperature. The measuring space inside the pick-up

  7. Characterization of 4 K CMOS devices and circuits for hybrid Josephson-CMOS systems

    OpenAIRE

    Yoshikawa, Nobuyuki; Tomida, T.; Tokuda, A.; Liu, Q.; Meng, X.(Institute of High Energy Physics, Beijing, China); Whiteley, SR.; VanDuzer, T.

    2005-01-01

    Characterization and modeling of CMOS devices at 4.2 K are carried out in order to simulate low-temperature operation of CMOS circuits for Josephson-CMOS hybrid systems. CMOS devices examined in this study have been fabricated by using 0.18 mu m, 0.25 mu m, and 0.35 mu m commercial CMOS processes. Their static IN characteristics and capacitances are measured at 4.2 K to establish the low-temperature device model based on the BSIM3 SPICE model. The propagation delays of CMOS inverters measured...

  8. 60-GHz array antenna with standard CMOS technology on Schott Borofloat

    Science.gov (United States)

    Jun, Luo; Yan, Wang; Ruifeng, Yue

    2013-11-01

    This design is presented of a 2 × 2 planar array, with a half-wave dipole antenna to be its element, on a new substrate material, Schott Borofloat, with CMOS technology in the 60 GHz band. In the proposed structure, all the designs are based on the CMOS technology and similar performance could be achieved with the same size in contrast to the design on low-temperature co-fired ceramic (LTCC). This could lead to the improving of the compatibility with the CMOS IC process, the design cost and the design precision which is restricted in the LTCC process. The simulated -10 dB bandwidth of the array is from 58 to 64 GHz. A peak gain of 9.4 dBi is achieved. Good agreement on return loss is achieved between simulations and measurements.

  9. Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade

    Science.gov (United States)

    Vilella, E.; Benoit, M.; Casanova, R.; Casse, G.; Ferrere, D.; Iacobucci, G.; Peric, I.; Vossebeld, J.

    2016-01-01

    HV-CMOS sensors can offer important advantages in terms of material budget, granularity and cost for large area tracking systems in high energy physics experiments. This article presents the design and simulated results of an HV-CMOS pixel demonstrator for the High Luminosity-LHC. The pixel demonstrator has been designed in the 0.35 μm HV-CMOS process from ams AG and submitted for fabrication through an engineering run. To improve the response of the sensor, different wafers with moderate to high substrate resistivities are used to fabricate the design. The prototype consists of four large analog and standalone matrices with several pixel flavours, which are all compatible for readout with the FE-I4 ASIC. Details about the matrices and the pixel flavours are provided in this article.

  10. Integration of solid-state nanopores in a 0.5 μm CMOS foundry process.

    Science.gov (United States)

    Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

    2013-04-19

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA-base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide-semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor's 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the n+ polysilicon/SiO2/n+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3, which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3.

  11. Free-Flying Magnetometer Data System

    Science.gov (United States)

    Blaes, B.; Javadi, H.; Spencer, H.

    2000-01-01

    The Free-Flying Magnetometer (FFM) is an autonomous "sensorcraft" developed at the Jet Propulsion Laboratory (JPL) for the Enstrophy sounding rocket mission. This mission was a collaborative project between the University of New Hampshire, Cornell University and JPL. The science goal of the mission was the study of current filamentation phenomena in the northern auroral region through multipoint measurements of magnetic field. The technical objective of the mission was the proof of concept of the JPL FFM design and the demonstration of an in-situ multipoint measurement technique employing many free-flying spacecraft. Four FFMs were successfully deployed from a sounding rocket launched from Poker Flats, Alaska on February 11, 1999. These hockey-puck-sized (80 mm diameter, 38 mm. height, 250 gram mass) free flyers each carry a miniature 3-axis flux-gate magnetometer that output +/- 2 V signals corresponding to a +/- 60,000 nT measurement range for each axis. The FFM uses a synchronized four-channel Sigma(Delta) Analog-to-Digital Converter (ADC) having a dynamic range of +/- 2.5V and converting at a rate of 279 samples/second/channel. Three channels are used to digitize the magnetometer signals to 17-bit (1.144 nT/bit) resolution. The fourth ADC channel is multiplexed for system monitoring of four temperature sensors and two battery voltages. The FFM also contains two sun sensors, a laser diode which emits a fan-shaped beam, a miniature S-band transmitter for direct communication to the ground station antennas, an ultra-stable Temperature Compensated Crystal Oscillator (TCXO) clock, an integrated data subsystem implemented in a Field-Programmable Gate Array (FPGA), a 4 Mbit Static Random Access Memory (SRAM) for data storage and Lithium Thionyl Chloride batteries for power. Communicating commands to the FFM prior to deployment is achieved with an infrared (IR) link. The FFM IR receiver responds to 9-bit pulse coded signals that are generated by an IR Light Emitting

  12. Integrated Inductors for RF Transmitters in CMOS/MEMS Smart Microsensor Systems

    Science.gov (United States)

    Kim, Jong-Wan; Takao, Hidekuni; Sawada, Kazuaki; Ishida, Makoto

    2007-01-01

    This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensor systems that have been developed to monitor the motion and vital signs of humans in various environments. Integration of radio frequency transmitter (RF) technology with complementary metal-oxide-semiconductor/micro electro mechanical systems (CMOS/MEMS) microsensors is required to realize the wireless smart microsensors system. The essential RF components such as a voltage controlled RF-CMOS oscillator (VCO), spiral inductors for an LC resonator and an integrated antenna have been fabricated and evaluated experimentally. The fabricated RF transmitter and integrated antenna were packaged with subminiature series A (SMA) connectors, respectively. For the impedance (50 Ω) matching, a bonding wire type inductor was developed. In this paper, the design and fabrication of the bonding wire inductor for impedance matching is described. Integrated techniques for the RF transmitter by CMOS compatible processes have been successfully developed. After matching by inserting the bonding wire inductor between the on-chip integrated antenna and the VCO output, the measured emission power at distance of 5 m from RF transmitter was -37 dBm (0.2 μW).

  13. Integrated Inductors for RF Transmitters in CMOS/MEMS Smart Microsensor Systems

    Directory of Open Access Journals (Sweden)

    Makoto Ishida

    2007-07-01

    Full Text Available This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS compatible processes for integrated smart microsensorsystems that have been developed to monitor the motion and vital signs of humans invarious environments. Integration of radio frequency transmitter (RF technology withcomplementary metal-oxide-semiconductor/micro electro mechanical systems (CMOS/MEMS microsensors is required to realize the wireless smart microsensors system. Theessential RF components such as a voltage controlled RF-CMOS oscillator (VCO, spiralinductors for an LC resonator and an integrated antenna have been fabricated and evaluatedexperimentally. The fabricated RF transmitter and integrated antenna were packaged withsubminiature series A (SMA connectors, respectively. For the impedance (50 matching,a bonding wire type inductor was developed. In this paper, the design and fabrication of thebonding wire inductor for impedance matching is described. Integrated techniques for theRF transmitter by CMOS compatible processes have been successfully developed. Aftermatching by inserting the bonding wire inductor between the on-chip integrated antennaand the VCO output, the measured emission power at distance of 5 m from RF transmitterwas -37 dBm (0.2 μW.

  14. Analog filters in nanometer CMOS

    CERN Document Server

    Uhrmann, Heimo; Zimmermann, Horst

    2014-01-01

    Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics ...

  15. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2012-06-15

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

  16. Portable design rules for bulk CMOS

    Science.gov (United States)

    Griswold, T. W.

    1982-01-01

    It is pointed out that for the past several years, one school of IC designers has used a simplified set of nMOS geometric design rules (GDR) which is 'portable', in that it can be used by many different nMOS manufacturers. The present investigation is concerned with a preliminary set of design rules for bulk CMOS which has been verified for simple test structures. The GDR are defined in terms of Caltech Intermediate Form (CIF), which is a geometry-description language that defines simple geometrical objects in layers. The layers are abstractions of physical mask layers. The design rules do not presume the existence of any particular design methodology. Attention is given to p-well and n-well CMOS processes, bulk CMOS and CMOS-SOS, CMOS geometric rules, and a description of the advantages of CMOS technology.

  17. CMOS test and evaluation a physical perspective

    CERN Document Server

    Bhushan, Manjul

    2015-01-01

    This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

  18. High transition-temperature SQUID magnetometers and practical applications

    Energy Technology Data Exchange (ETDEWEB)

    Dantsker, Eugene [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1997-05-01

    The design, fabrication and performance of SQUID magnetometers based on thin films of the high-transition temperature superconductor YBa2Cu3O7-x (YBCO) are described. Essential to the achieving high magnetic field resolution at low frequencies is the elimination of 1/f flux noise due to thermally activated hopping of flux vortices between pinning sites in the superconducting films. Through improvements in processing, 1/f noise in single layer YBCO thin films and YBCO-SrTiO3-YBCO trilayers was systematically reduced to allow fabrication of sensitive SQUID magnetometers. Both single-layer directly coupled SQUID magnetometers and multilayer magnetometers were fabricated, based on the dc SQUID with bicrystal grain boundary Josephson junctions. Multilayer magnetometers had a lower magnetic field noise for a given physical size due to greater effective sensing areas. A magnetometer consisting of a SQUID inductively coupled to the multiturn input coil of a flux transformer in a flip-chip arrangement had a field noise of 27 fT Hz-1/2 at 1 Hz and 8.5 fT Hz-1/2 at 1 kHz. A multiloop multilayer SQUID magnetometer had a field noise of 37 fT Hz-1/2 at 1 Hz and 18 fT Hz-1/2 at 1 kHz. A three-axis SQUID magnetometer for geophysical applications was constructed and operated in the field in the presence of 60 Hz and radiofrequency noise. Clinical quality magnetocardiograms were measured using multilayer SQUID magnetometers in a magnetically shielded room.

  19. High transition-temperature SQUID magnetometers and practical applications

    Energy Technology Data Exchange (ETDEWEB)

    Dantsker, E [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1997-05-01

    The design, fabrication and performance of SQUID magnetometers based on thin films of the high-transition temperature superconductor YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) are described. Essential to the achieving high magnetic field resolution at low frequencies is the elimination of 1/f flux noise due to thermally activated hopping of flux vortices between pinning sites in the superconducting films. Through improvements in processing, 1/f noise in single layer YBCO thin films and YBCO-SrTiO{sub 3}-YBCO trilayers was systematically reduced to allow fabrication of sensitive SQUID magnetometers. Both single-layer directly coupled SQUID magnetometers and multilayer magnetometers were fabricated, based on the dc SQUID with bicrystal grain boundary Josephson junctions. Multilayer magnetometers had a lower magnetic field noise for a given physical size due to greater effective sensing areas. A magnetometer consisting of a SQUID inductively coupled to the multiturn input coil of a flux transformer in a flip-chip arrangement had a field noise of 27 fT Hz{sup {minus}1/2} at 1 Hz and 8.5 fT Hz{sup {minus}1/2} at 1 kHz. A multiloop multilayer SQUID magnetometer had a field noise of 37 fT Hz{sup {minus}1/2} at 1 Hz and 18 fT Hz{sup {minus}1/2} at 1 kHz. A three-axis SQUID magnetometer for geophysical applications was constructed and operated in the field in the presence of 60 Hz and radiofrequency noise. Clinical quality magnetocardiograms were measured using multilayer SQUID magnetometers in a magnetically shielded room.

  20. High-Sensitivity Low-Noise Miniature Fluxgate Magnetometers Using a Flip Chip Conceptual Design

    Directory of Open Access Journals (Sweden)

    Chih-Cheng Lu

    2014-07-01

    Full Text Available This paper presents a novel class of miniature fluxgate magnetometers fabricated on a print circuit board (PCB substrate and electrically connected to each other similar to the current “flip chip” concept in semiconductor package. This sensor is soldered together by reversely flipping a 5 cm × 3 cm PCB substrate to the other identical one which includes dual magnetic cores, planar pick-up coils, and 3-D excitation coils constructed by planar Cu interconnections patterned on PCB substrates. Principles and analysis of the fluxgate sensor are introduced first, and followed by FEA electromagnetic modeling and simulation for the proposed sensor. Comprehensive characteristic experiments of the miniature fluxgate device exhibit favorable results in terms of sensitivity (or “responsivity” for magnetometers and field noise spectrum. The sensor is driven and characterized by employing the improved second-harmonic detection technique that enables linear V-B correlation and responsivity verification. In addition, the double magnitude of responsivity measured under very low frequency (1 Hz magnetic fields is experimentally demonstrated. As a result, the maximum responsivity of 593 V/T occurs at 50 kHz of excitation frequency with the second harmonic wave of excitation; however, the minimum magnetic field noise is found to be 0.05 nT/Hz1/2 at 1 Hz under the same excitation. In comparison with other miniature planar fluxgates published to date, the fluxgate magnetic sensor with flip chip configuration offers advances in both device functionality and fabrication simplicity. More importantly, the novel design can be further extended to a silicon-based micro-fluxgate chip manufactured by emerging CMOS-MEMS technologies, thus enriching its potential range of applications in modern engineering and the consumer electronics market.

  1. A 3-Axis Miniature Magnetic Sensor Based on a Planar Fluxgate Magnetometer with an Orthogonal Fluxguide.

    Science.gov (United States)

    Lu, Chih-Cheng; Huang, Jeff

    2015-06-19

    A new class of tri-axial miniature magnetometer consisting of a planar fluxgate structure with an orthogonal ferromagnetic fluxguide centrally situated over the magnetic cores is presented. The magnetic sensor possesses a cruciform ferromagnetic core placed diagonally upon the square excitation coil under which two pairs of pick-up coils for in-plane field detection are allocated. Effective principles and analysis of the magnetometer for 3-D field vectors are described and verified by numerically electromagnetic simulation for the excitation and magnetization of the ferromagnetic cores. The sensor is operated by applying the second-harmonic detection technique that can verify V-B relationship and device responsivity. Experimental characterization of the miniature fluxgate device demonstrates satisfactory spatial magnetic field detection results in terms of responsivity and noise spectrum. As a result, at an excitation frequency of 50 kHz, a maximum in-plane responsivity of 122.4 V/T appears and a maximum out-of-plane responsivity of 11.6 V/T is obtained as well. The minimum field noise spectra are found to be 0.11 nT/√Hz and 6.29 nT/√Hz, respectively, in X- and Z-axis at 1 Hz under the same excitation frequency. Compared with the previous tri-axis fluxgate devices, this planar magnetic sensor with an orthogonal fluxguide provides beneficial enhancement in both sensory functionality and manufacturing simplicity. More importantly, this novel device concept is considered highly suitable for the extension to a silicon sensor made by the current CMOS-MEMS technologies, thus emphasizing its emerging applications of field detection in portable industrial electronics.

  2. Absorbed dose by a CMOS in radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  3. CMOS Image Sensors for High Speed Applications

    Directory of Open Access Journals (Sweden)

    M. Jamal Deen

    2009-01-01

    Full Text Available Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4~5 μm due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps.

  4. CMOS Image Sensors for High Speed Applications.

    Science.gov (United States)

    El-Desouki, Munir; Deen, M Jamal; Fang, Qiyin; Liu, Louis; Tse, Frances; Armstrong, David

    2009-01-01

    Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).

  5. CMOS Law-jitter Clock Driver Design

    OpenAIRE

    2012-01-01

    [ANGLÈS] Design of a low-jitter, low-phase noise clock driver in 40 nm CMOS technology. The work is in the field of analog integrated circuit (IC) design in nanometer CMOS technologies. [CASTELLÀ] Diseño de un circuito integrado "clock driver" de bajo jitter y bajo ruido de fase en tecnología CMOS 40 nm. El trabajo se contextualiza en el campo del diseño de circuitos integrados analógicos en tecnologías CMOS nanométricas. [CATALÀ] Disseny d'un circuit "clock driver" de baix jitter i bai...

  6. Microelectronic test structures for CMOS technology

    CERN Document Server

    Ketchen, Mark B

    2011-01-01

    Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

  7. Absorbed dose by a CMOS in radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  8. Self-Compensating Excitation of Fluxgate Sensors for Space Magnetometers

    DEFF Research Database (Denmark)

    Cerman, Alec; Merayo, José M.G.; Brauer, Peter;

    2008-01-01

    The paper presents design and implementation of the new self-compensating excitation circuitry to the new generation of high-precise space vector magnetometers. The application starts with complex study including design of new robust model of the non-linear inductor leading to investigation...... of the most crucial points, continuous by design of the self-compensating excitation unit and concludes with unit complex testing and application to the magnetometer. The application of the self-compensation of the excitation decreases temperature drift of the magnetometer offset caused by the temperature...

  9. Experimental Investigation on a Highly Sensitive Atomic Magnetometer

    Institute of Scientific and Technical Information of China (English)

    LI Shu-Guang; XU Yun-Fei; WANG Zhao-Ying; LIU Yun-Xian; LIN Qiang

    2009-01-01

    A highly sensitive all-optical atomic magnetometer based on the magnetooptical effect which uses the advanced technique of single laser beam detection is reported and demonstrated experimentally.A sensitivityof 0.5 pT/Hz1/2 is obtained by analyzing the magnetic noise spectrum,which exceeds that of most traditional magnetometers.This kind of atomic magnetometer is very compact,has a low power consumption,and has a high theoretical sensitivity limit,which make it suitable for many applications.

  10. Search Coil vs. Fluxgate Magnetometer Measurements at Interplanetary Shocks

    Science.gov (United States)

    Wilson, L.B., III

    2012-01-01

    We present magnetic field observations at interplanetary shocks comparing two different sample rates showing significantly different results. Fluxgate magnetometer measurements show relatively laminar supercritical shock transitions at roughly 11 samples/s. Search coil magnetometer measurements at 1875 samples/s, however, show large amplitude (dB/B as large as 2) fluctuations that are not resolved by the fluxgate magnetometer. We show that these fluctuations, identified as whistler mode waves, would produce a significant perturbation to the shock transition region changing the interpretation from laminar to turbulent. Thus, previous observations of supercritical interplanetary shocks classified as laminar may have been under sampled.

  11. Analysing harmonic motions with an iPhone’s magnetometer

    Science.gov (United States)

    Yavuz, Ahmet; Kağan Temiz, Burak

    2016-05-01

    In this paper, we propose an experiment for analysing harmonic motion using an iPhone’s (or iPad’s) magnetometer. This experiment consists of the detection of magnetic field variations obtained from an iPhone’s magnetometer sensor. A graph of harmonic motion is directly displayed on the iPhone’s screen using the Sensor Kinetics application. Data from this application was analysed with Eureqa software to establish the equation of the harmonic motion. Analyses show that the use of an iPhone’s magnetometer to analyse harmonic motion is a practical and effective method for small oscillations and frequencies less than 15-20 Hz.

  12. Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies

    OpenAIRE

    Vilella Figueras, Eva; Arbat Casas, Anna; Alonso Casanovas, Oscar; Comerma Montells, Albert; Trenado, J.; Vilà i Arbonès, Anna Maria; Casanova Mohr, Raimon; Garrido Beltrán, Lluís; Diéguez Barrientos, Àngel

    2011-01-01

    Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance o...

  13. Complementary Metal-Oxide-Silicon (CMOS)-Memristor Hybrid Nanoelectronics for Advanced Encryption Standard (AES) Encryption

    Science.gov (United States)

    2016-04-01

    Encryption Standard (AES). This new hybrid CMOS/memristor technology will be available for future novel, emerging unconventional architecture with size...new encryption paradigms by changing the algorithm and building blocks that can fundamentally improve AES architecture and implementation. Thus, the...compatible HfO2 tool. Because of this, we have collaborated with Canon-Anelva ( Japan ), to deposit 15 nm of HfO2 on our M1 wafers by reactive sputtering. After

  14. Self-Calibrating Vector Helium Magnetometer (SVHM) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase 2 SBIR proposal describes the design, fabrication and calibration of a brass-board Self-Calibrating Vector Helium Magnetometer (SVHM). The SVHM instrument...

  15. Ørsted Pre-Flight Magnetometer Calibration Mission

    DEFF Research Database (Denmark)

    Risbo, T.; Brauer, Peter; Merayo, José M.G.

    2003-01-01

    The compact spherical coil (CSC) vector-feedback magnetometer on the Danish circle dividersted geomagnetic mapping satellite underwent extensive calibrations and verifications prior to integration and launch. The theory of the 'thin shell' calibration procedure is introduced. Spherical harmonic m...

  16. Low-Fiend Vector Magnetometer (V-400-LF) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This 2010 NASA SBIR Phase 1 proposal for an innovative Low-Field Vector Magnetometer (V-400-LF) is a response to subtopic S1.06 Particles and Field Sensors and...

  17. Correcting GOES-R Magnetometer Data for Stray Fields

    Science.gov (United States)

    Carter, Delano; Freesland, Douglas; Tadikonda, Sivakumar; Kronenwetter, Jeffrey; Todirita, Monica; Dahya, Melissa; Chu, Donald

    2016-01-01

    Time-varying spacecraft magnetic fields, i.e. stray fields, are a problem for magnetometer systems. While constant fields can be removed by calibration, stray fields are difficult to distinguish from ambient field variations. Putting two magnetometers on a long boom and solving for both the ambient and stray fields can help, but this gradiometer solution is more sensitive to noise than a single magnetometer. As shown here for the R-series Geostationary Operational Environmental Satellites (GOES-R), unless the stray fields are larger than the noise, simply averaging the two magnetometer readings gives a more accurate solution. If averaging is used, it may be worthwhile to estimate and remove stray fields explicitly. Models and estimation algorithms to do so are provided for solar array, arcjet and reaction wheel fields.

  18. Multi-channel atomic magnetometer for magnetoencephalography: a configuration study.

    Science.gov (United States)

    Kim, Kiwoong; Begus, Samo; Xia, Hui; Lee, Seung-Kyun; Jazbinsek, Vojko; Trontelj, Zvonko; Romalis, Michael V

    2014-04-01

    Atomic magnetometers are emerging as an alternative to SQUID magnetometers for detection of biological magnetic fields. They have been used to measure both the magnetocardiography (MCG) and magnetoencephalography (MEG) signals. One of the virtues of the atomic magnetometers is their ability to operate as a multi-channel detector while using many common elements. Here we study two configurations of such a multi-channel atomic magnetometer optimized for MEG detection. We describe measurements of auditory evoked fields (AEF) from a human brain as well as localization of dipolar phantoms and auditory evoked fields. A clear N100m peak in AEF was observed with a signal-to-noise ratio of higher than 10 after averaging of 250 stimuli. Currently the intrinsic magnetic noise level is 4fTHz(-1/2) at 10Hz. We compare the performance of the two systems in regards to current source localization and discuss future development of atomic MEG systems.

  19. A full optically operated magnetometer array: an experimental study.

    Science.gov (United States)

    Ijsselsteijn, R; Kielpinski, M; Woetzel, S; Scholtes, T; Kessler, E; Stolz, R; Schultze, V; Meyer, H-G

    2012-11-01

    We show the operation of an optically pumped magnetometer array in a 50 μT magnetic field. The various components for a fully optical and non-magnetic detector unit were constructed and evaluated, from which a prototype unit was assembled with fiber coupled electronics. In this unit the magnetometers were operated using the intensity modulated method and heated with an off-resonant laser. Calculations on the temperature distribution were used to design the magnetometer array. Different magnetometers in such a detector unit were characterized and showed identical performance. Without applying noise reduction schemes, the obtained magnetic field resolution is a factor 2.5 above the shot noise level down to frequencies of about 7 Hz.

  20. Self-Calibrating Vector Helium Magnetometer (SVHM) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I SBIR proposal describes proposed development of a conceptual design for a Self-Calibrating Vector Helium Magnetometer (SVHM) for design and fabrication...

  1. High-Range Scalar Helium Magnetometer (HSHM) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I proposal describes development of a conceptual design for a High-range Scalar Helium Magnetometer (HSHM) for the field range +/-16 Gauss. The HSHM...

  2. Ultra-sensitive Magnetic Microscopy with an Atomic Magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Jin [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-08-19

    The PowerPoint presentation focused on research goals, specific information about the atomic magnetometer, response and resolution factors of the SERF magnetometer, FC+AM systems, tests of field transfer and resolution on FC, gradient cancellation, testing of AM performance, ideas for a multi-channel AM, including preliminary sensitivity testing, and a description of a 6 channel DAQ system. A few ideas for future work ended the presentation.

  3. Multichannel optical atomic magnetometer operating in unshielded environment

    CERN Document Server

    Bevilacqua, Giuseppe; Chessa, Piero; Dancheva, Yordanka

    2016-01-01

    A multi-channel atomic magnetometer operating in an unshielded environment is described and characterised. The magnetometer is based on D1 optical pumping and D2 polarimetry of Cs vapour contained in gas-buffered cells. Several technical implementations are described and discussed in detail. The demonstrated sensitivity of the setup is 100fT/Hz^1/2 when operating in the difference mode.

  4. Optofluidic magnetometer developed in a microstructured optical fiber.

    Science.gov (United States)

    Candiani, A; Konstantaki, M; Margulis, W; Pissadakis, S

    2012-11-01

    A directional, in-fiber optofluidic magnetometer based on a microstructured optical fiber (MOF) Bragg-grating infiltrated with a ferrofluidic defect is presented. Upon application of a magnetic field, the ferrofluidic defect moves along the length of the MOF Bragg grating, modifying its reflection spectrum. The magnetometer is capable of measuring magnetic fields from 317 to 2500 G. The operational principle of such in-fiber magnetic field probe allows the elaboration of directional measurements of the magnetic field flux.

  5. Detection of J-coupling using atomic magnetometer

    Science.gov (United States)

    Ledbetter, Micah P.; Crawford, Charles W.; Wemmer, David E.; Pines, Alexander; Knappe, Svenja; Kitching, John; Budker, Dmitry

    2015-09-22

    An embodiment of a method of detecting a J-coupling includes providing a polarized analyte adjacent to a vapor cell of an atomic magnetometer; and measuring one or more J-coupling parameters using the atomic magnetometer. According to an embodiment, measuring the one or more J-coupling parameters includes detecting a magnetic field created by the polarized analyte as the magnetic field evolves under a J-coupling interaction.

  6. The Search-Coil Magnetometer for MMS

    Science.gov (United States)

    Le Contel, O.; Leroy, P.; Roux, A.; Coillot, C.; Alison, D.; Bouabdellah, A.; Mirioni, L.; Meslier, L.; Galic, A.; Vassal, M. C.; Torbert, R. B.; Needell, J.; Rau, D.; Dors, I.; Ergun, R. E.; Westfall, J.; Summers, D.; Wallace, J.; Magnes, W.; Valavanoglou, A.; Olsson, G.; Chutter, M.; Macri, J.; Myers, S.; Turco, S.; Nolin, J.; Bodet, D.; Rowe, K.; Tanguy, M.; de la Porte, B.

    2016-03-01

    The tri-axial search-coil magnetometer (SCM) belongs to the FIELDS instrumentation suite on the Magnetospheric Multiscale (MMS) mission (Torbert et al. in Space Sci. Rev. (2014), this issue). It provides the three magnetic components of the waves from 1 Hz to 6 kHz in particular in the key regions of the Earth's magnetosphere namely the subsolar region and the magnetotail. Magnetospheric plasmas being collisionless, such a measurement is crucial as the electromagnetic waves are thought to provide a way to ensure the conversion from magnetic to thermal and kinetic energies allowing local or global reconfigurations of the Earth's magnetic field. The analog waveforms provided by the SCM are digitized and processed inside the digital signal processor (DSP), within the Central Electronics Box (CEB), together with the electric field data provided by the spin-plane double probe (SDP) and the axial double probe (ADP). On-board calibration signal provided by DSP allows the verification of the SCM transfer function once per orbit. Magnetic waveforms and on-board spectra computed by DSP are available at different time resolution depending on the selected mode. The SCM design is described in details as well as the different steps of the ground and in-flight calibrations.

  7. Ultrasensitive magnetometer using a single atom

    CERN Document Server

    Baumgart, I; Retzker, A; Plenio, M B; Wunderlich, Ch

    2014-01-01

    Precision sensing, and in particular high precision magnetometry, is a central goal of research into quantum technologies. For magnetometers often trade-offs exist between sensitivity, spatial resolution, and frequency range. The precision, and thus the sensitivity of magnetometry scales as $1/\\sqrt {T_2}$ with the phase coherence time, $T_2$, of the sensing system playing the role of a key determinant. Adapting a dynamical decoupling scheme that allows for extending $T_2$ by orders of magnitude and merging it with a magnetic sensing protocol, we achieve a measurement sensitivity even for high frequency fields close to the standard quantum limit. Using a single atomic ion as a sensor, we experimentally attain a sensitivity of $4$ pT Hz$^{-1/2}$ for an alternating-current (AC) magnetic field near 14 MHz. Based on the principle demonstrated here, this unprecedented sensitivity combined with spatial resolution in the nanometer range and tuneability from direct-current to the gigahertz range could be used for mag...

  8. Magnetoencephalography with Optically Pumped Atomic Magnetometers

    Science.gov (United States)

    Schwindt, Peter; Colombo, Anthony; Jau, Yuan-Yu; Carter, Tony; Berry, Christopher; Young, Amber; McKay, Jim; Weisend, Michael

    2015-05-01

    We are working to develop a 36-channel array of optically pumped atomic magnetometers (AMs) to perform magnetoencephalography (MEG) with the goal of localizing magnetic sources within the human brain. The 36-channel array will consist of nine 4-channel sensor modules where the channels within each sensor will be spaced by 18 mm and each sensor will cover a 40 mm by 40 mm area of the head. In a previous 4-channel AM prototype, we demonstrated the measurement of evoked responses in both the auditory and somatosensory cortexes. This prototype had a 5 fT/Hz1/2 sensitivity. In the current version of the AM under development we are maintaining the previous sensitivity while implementing several improvements, including increasing the bandwidth from 20 Hz to more than 100 Hz, reducing the separation of the active volume of the AM from exterior of the sensor from 25 mm to 10 mm or less, and reducing the active sensor volume by a factor >10 to ~15 mm3. We will present results on the performance of our most recent AM prototype and progress toward developing a complete MEG system including a person-sized magnetic shield to provide a low-noise magnetic environment for MEG measurements.

  9. Magnetometer for measuring planetary magnetic fields

    DEFF Research Database (Denmark)

    Merayo, José M.G.; Brauer, Peter

    The investigation of the magnetism of the Solar system planets is became one of the important issues for understanding their evolution and history. This has special relevance at Mars after the NASA MGS mission unexpectedly detected higher crustal magnetic anomalies than those existing on Earth...... satellite, the instrument (including hardness) weights less than 1 kg and the electronics unit (featuring redundancy) of the instrument and the sensor has dimensions of 100x100x40 mm and 54x46x33 mm. For a lander, station and/or aerial platform, the instrument can be delivered for direct assembly in a board....... In this case the weight is less than 0.25 kg. And the electronics unit and the sensor have dimensions of 100x70x12 mm and 45x28x30 mm, respectively. In order to determine the orientation of the magnetometer, a star tracker providing high precision attitude can be used for an orbiting satellite. For lander...

  10. Ultrasensitive Magnetometer using a Single Atom.

    Science.gov (United States)

    Baumgart, I; Cai, J-M; Retzker, A; Plenio, M B; Wunderlich, Ch

    2016-06-17

    Precision sensing, and in particular high precision magnetometry, is a central goal of research into quantum technologies. For magnetometers, often trade-offs exist between sensitivity, spatial resolution, and frequency range. The precision, and thus the sensitivity of magnetometry, scales as 1/sqrt[T_{2}] with the phase coherence time T_{2} of the sensing system playing the role of a key determinant. Adapting a dynamical decoupling scheme that allows for extending T_{2} by orders of magnitude and merging it with a magnetic sensing protocol, we achieve a measurement sensitivity even for high frequency fields close to the standard quantum limit. Using a single atomic ion as a sensor, we experimentally attain a sensitivity of 4.6  pT/sqrt[Hz] for an alternating-current magnetic field near 14 MHz. Based on the principle demonstrated here, this unprecedented sensitivity combined with spatial resolution in the nanometer range and tunability from direct current to the gigahertz range could be used for magnetic imaging in as of yet inaccessible parameter regimes.

  11. CMOS circuits for analog signal processing

    NARCIS (Netherlands)

    Wallinga, Hans

    1988-01-01

    Design choices in CMOS analog signal processing circuits are presented. Special attention is focussed on continuous-time filter technologies. The basics of MOSFET-C continuous-time filters and CMOS Square Law Circuits are explained at the hand of a graphical MOST characteristics representation.

  12. Nanosecond monolithic CMOS readout cell

    Science.gov (United States)

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  13. Optoelectronic circuits in nanometer CMOS technology

    CERN Document Server

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  14. Design and Fabrication of High-Efficiency CMOS/CCD Imagers

    Science.gov (United States)

    Pain, Bedabrata

    2007-01-01

    An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the

  15. SOI CMOS Imager with Suppression of Cross-Talk

    Science.gov (United States)

    Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao

    2009-01-01

    A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

  16. A CMOS silicon spin qubit

    Science.gov (United States)

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  17. Si light-emitting device in integrated photonic CMOS ICs

    Science.gov (United States)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  18. W-CMOS blanking device for projection multibeam lithography

    Science.gov (United States)

    Jurisch, Michael; Irmscher, Mathias; Letzkus, Florian; Eder-Kapl, Stefan; Klein, Christof; Loeschner, Hans; Piller, Walter; Platzgummer, Elmar

    2010-05-01

    As the designs of future mask nodes become more and more complex the corresponding pattern writing times will rise significantly when using single beam writing tools. Projection multi-beam lithography [1] is one promising technology to enhance the throughput compared to state of the art VSB pattern generators. One key component of the projection multi-beam tool is an Aperture Plate System (APS) to form and switch thousands of individual beamlets. In our present setup a highly parallel beam is divided into 43,008 individual beamlets by a Siaperture- plate. These micrometer sized beams pass through larger openings in a blanking-plate and are individually switched on and off by applying a voltage to blanking-electrodes which are placed around the blanking-plate openings. A charged particle 200x reduction optics demagnifies the beamlet array to the substrate. The switched off beams are filtered out in the projection optics so that only the beams which are unaffected by the blanking-plate are projected to the substrate with 200x reduction. The blanking-plate is basically a CMOS device for handling the writing data. In our work the blanking-electrodes are fabricated using CMOS compatible add on processes like SiO2-etching or metal deposition and structuring. A new approach is the implementation of buried tungsten electrodes for beam blanking.

  19. Overhauser magnetometer sensor design for magnetic field observation

    Science.gov (United States)

    Li, Zan; Chen, Shudong; Zhang, Shuang; Guo, Xin; Cao, Qiong

    2016-10-01

    The Overhauser magnetometer, with its unique set of advantages, such as low power consumption, high precision and fast recording ability has been widely used in geophysical mineral and oil exploration, archeology, environmental survey, ordnance and weapons detection (UXO) and other earth science applications. Compared with the traditional proton magnetometer, which suffers from high power consumption and low precision, the Overhauser magnetometer excite the free radical solution in a cavity with RF signal to enhance nuclear magnetic resonance (NMR). Thus, RF resonator plays a crucial role in reducing power consumption and improving the accuracy of Overhauser magnetometer. There are a wide variety of resonators, but only two of them are chosen for Overhauser magnetometer: birdcage coil and coaxial resonator. In order to get the best RF cavity for Overhauser magnetometer sensor, both resonators are investigated here. Firstly, parameters of two RF resonators are calculated theoretically and simulated with Ansoft HFSS. The results indicate that birdcage coil is characterized by linear polarization while coaxial resonator is characterized by circular polarization. Besides, all RF fields are limited inside of the coaxial resonator while distributed both inside and outside of the birdcage coil. Then, the two resonators are practically manufactured based on the theoretical design. And the S-parameter and Smith chart of these resonators are measured with Agilent 8712ES RF network analyzer. The measured results indicate that the coaxial resonator has a much higher Q value(875) than the birdcage coil(70). All these results reveal a better performance for coaxial resonator. Finally, field experimental shows 0.074nT sensitivity for Overhauser magnetometer with coaxial resonator.

  20. Integrated RF MEMS/CMOS Devices

    CERN Document Server

    Mansour, R R; Bakeri-Kassem, M

    2008-01-01

    A maskless post-processing technique for CMOS chips is developed that enables the fabrication of RF MEMS parallel-plate capacitors with a high quality factor and a very compact size. Simulations and measured results are presented for several MEMS/CMOS capacitors. A 2-pole coupled line tunable bandpass filter with a center frequency of 9.5 GHz is designed, fabricated and tested. A tuning range of 17% is achieved using integrated variable MEMS/CMOS capacitors with a quality factor exceeding 20. The tunable filter occupies a chip area of 1.2 x 2.1 mm2.

  1. Spectrometry with consumer-quality CMOS cameras.

    Science.gov (United States)

    Scheeline, Alexander

    2015-01-01

    Many modern spectrometric instruments use diode arrays, charge-coupled arrays, or CMOS cameras for detection and measurement. As portable or point-of-use instruments are desirable, one would expect that instruments using the cameras in cellular telephones and tablet computers would be the basis of numerous instruments. However, no mass market for such devices has yet developed. The difficulties in using megapixel CMOS cameras for scientific measurements are discussed, and promising avenues for instrument development reviewed. Inexpensive alternatives to use of the built-in camera are also mentioned, as the long-term question is whether it is better to overcome the constraints of CMOS cameras or to bypass them.

  2. Nanopore-CMOS Interfaces for DNA Sequencing.

    Science.gov (United States)

    Magierowski, Sebastian; Huang, Yiyun; Wang, Chengjie; Ghafar-Zadeh, Ebrahim

    2016-08-06

    DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews existing and emerging means of interfacing nanopores to CMOS technology with an emphasis on massively-arrayed structures. It presents this in the context of incumbent DNA sequencing techniques, reviews and quantifies nanopore characteristics and models and presents CMOS circuit methods for the amplification of low-current nanopore signals in such interfaces.

  3. Harmonic Distortion in CMOS Current Mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1998-01-01

    One of the origins of harmonic distortion in CMOS current mirrors is the inevitable mismatch between the MOS transistors involved. In this paper we examine both single current mirrors and complementary class AB current mirrors and develop an analytical model for the mismatch induced harmonic...... distortion. This analytical model is verified through simulations and is used for a discussion of the impact of mismatch on harmonic distortion properties of CMOS current mirrors. It is found that distortion levels somewhat below 1% can be attained by carefully matching the mirror transistors but ultra low...... distortion is not achievable with CMOS current mirrors...

  4. Bridging faults in BiCMOS circuits

    Science.gov (United States)

    Menon, Sankaran M.; Malaiya, Yashwant K.; Jayasumana, Anura P.

    1993-01-01

    Combining the advantages of CMOS and bipolar, BiCMOS is emerging as a major technology for many high performance digital and mixed signal applications. Recent investigations revealed that bridging faults can be a major failure mode in IC's. Effects of bridging faults in BiCMOS circuits are presented. Bridging faults between logical units without feedback and logical units with feedback are considered. Several bridging faults can be detected by monitoring the power supply current (I(sub DDQ) monitoring). Effects of bridging faults and bridging resistance on output logic levels were examined along with their effects on noise immunity.

  5. Carbon Nanotube Integration with a CMOS Process

    OpenAIRE

    Perez, Maximiliano S.; Betiana Lerner; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Pedro M. Julian; Pablo S. Mandolesi; Fabian A. Buffa; Alfredo Boselli; Alberto Lamagna

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new rout...

  6. Carbon nanotube integration with a CMOS process.

    Science.gov (United States)

    Perez, Maximiliano S; Lerner, Betiana; Resasco, Daniel E; Pareja Obregon, Pablo D; Julian, Pedro M; Mandolesi, Pablo S; Buffa, Fabian A; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

  7. Carbon Nanotube Integration with a CMOS Process

    Directory of Open Access Journals (Sweden)

    Maximiliano S. Perez

    2010-04-01

    Full Text Available This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

  8. Carbon Nanotube Integration with a CMOS Process

    Science.gov (United States)

    Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

  9. Aircraft electromagnetic compatibility

    Science.gov (United States)

    Clarke, Clifton A.; Larsen, William E.

    1987-06-01

    Illustrated are aircraft architecture, electromagnetic interference environments, electromagnetic compatibility protection techniques, program specifications, tasks, and verification and validation procedures. The environment of 400 Hz power, electrical transients, and radio frequency fields are portrayed and related to thresholds of avionics electronics. Five layers of protection for avionics are defined. Recognition is given to some present day electromagnetic compatibility weaknesses and issues which serve to reemphasize the importance of EMC verification of equipment and parts, and their ultimate EMC validation on the aircraft. Proven standards of grounding, bonding, shielding, wiring, and packaging are laid out to help provide a foundation for a comprehensive approach to successful future aircraft design and an understanding of cost effective EMC in an aircraft setting.

  10. Human MCG measurements with a high-sensitivity potassium atomic magnetometer.

    Science.gov (United States)

    Kamada, K; Ito, Y; Kobayashi, T

    2012-06-01

    Measuring biomagnetic fields, such as magnetocardiograms (MCGs), is important for investigating biological functions. To address to this need, we developed an optically pumped atomic magnetometer. In this study, human MCGs were acquired using a potassium atomic magnetometer without any modulating systems. The sensitivity of the magnetometer is comparable to that of high-T(c) superconducting quantum interference devices (SQUIDs) and is sufficient for acquiring human MCGs. The activity of a human heart estimated from the MCG maps agrees well with that measured with SQUID magnetometers. Thus, our magnetometer produces reliable results, which demonstrate the potential of our atomic magnetometer for biomagnetic measurements.

  11. Analog CMOS contrastive Hebbian networks

    Science.gov (United States)

    Schneider, Christian; Card, Howard

    1992-09-01

    CMOS VLSI circuits implementing an analog neural network with on-chip contrastive Hebbian learning and capacitive synaptic weight storage have been designed and fabricated. Weights are refreshed by periodic repetition of the training data. To evaluate circuit performance in a medium-sized system, these circuits were used to build a 132 synapse neural network. An adaptive neural system, such as the one described in this paper, can compensate for imperfections in the components from which it is constructed, and thus it is possible to build this type of system using simple, silicon area-efficient analog circuits. Because these analog VLSI circuits are far more compact than their digital counterparts, analog VLSI neural network implementations are potentially more efficient than digital ones.

  12. Assessing and ensuring GOES-R magnetometer accuracy

    Science.gov (United States)

    Carter, Delano; Todirita, Monica; Kronenwetter, Jeffrey; Dahya, Melissa; Chu, Donald

    2016-05-01

    The GOES-R magnetometer subsystem accuracy requirement is 1.7 nanoteslas (nT). During quiet times (100 nT), accuracy is defined as absolute mean plus 3 sigma error per axis. During storms (300 nT), accuracy is defined as absolute mean plus 2 sigma error per axis. Error comes both from outside the magnetometers, e.g. spacecraft fields and misalignments, as well as inside, e.g. zero offset and scale factor errors. Because zero offset and scale factor drift over time, it will be necessary to perform annual calibration maneuvers. To predict performance before launch, we have used Monte Carlo simulations and covariance analysis. With the proposed calibration regimen, both suggest that the magnetometer subsystem will meet its accuracy requirements.

  13. Rotating sample magnetometer for cryogenic temperatures and high magnetic fields.

    Science.gov (United States)

    Eisterer, M; Hengstberger, F; Voutsinas, C S; Hörhager, N; Sorta, S; Hecher, J; Weber, H W

    2011-06-01

    We report on the design and implementation of a rotating sample magnetometer (RSM) operating in the variable temperature insert (VTI) of a cryostat equipped with a high-field magnet. The limited space and the cryogenic temperatures impose the most critical design parameters: the small bore size of the magnet requires a very compact pick-up coil system and the low temperatures demand a very careful design of the bearings. Despite these difficulties the RSM achieves excellent resolution at high magnetic field sweep rates, exceeding that of a typical vibrating sample magnetometer by about a factor of ten. In addition the gas-flow cryostat and the high-field superconducting magnet provide a temperature and magnetic field range unprecedented for this type of magnetometer.

  14. Design and Analyses of a MEMS Based Resonant Magnetometer.

    Science.gov (United States)

    Ren, Dahai; Wu, Lingqi; Yan, Meizhi; Cui, Mingyang; You, Zheng; Hu, Muzhi

    2009-01-01

    A novel design of a MEMS torsional resonant magnetometer based on Lorentz force is presented and fabricated. The magnetometer consists of a silicon resonator, torsional beam, excitation coil, capacitance plates and glass substrate. Working in a resonant condition, the sensor's vibration amplitude is converted into the sensing capacitance change, which reflects the outside magnetic flux-density. Based on the simulation, the key structure parameters are optimized and the air damping effect is estimated. The test results of the prototype are in accordance with the simulation results of the designed model. The resolution of the magnetometer can reach 30 nT. The test results indicate its sensitivity of more than 400 mV/μT when operating in a 10 Pa vacuum environment.

  15. Versatile magnetometer assembly for characterizing magnetic properties of nanoparticles.

    Science.gov (United States)

    Araujo, J F D F; Bruno, A C; Louro, S R W

    2015-10-01

    We constructed a versatile magnetometer assembly for characterizing iron oxide nanoparticles. The magnetometer can be operated at room temperature or inside a cryocooler at temperatures as low as 6 K. The magnetometer's sensor can be easily exchanged and different detection electronics can be used. We tested the assembly with a non-cryogenic commercial Hall sensor and a benchtop multimeter in a four-wire resistance measurement scheme. A magnetic moment sensitivity of 8.5 × 10(-8) Am(2) was obtained with this configuration. To illustrate the capability of the assembly, we synthesized iron oxide nanoparticles coated with different amounts of a triblock copolymer, Pluronic F-127, and characterized their magnetic properties. We determined that the polymer coating does not affect the magnetization of the particles at room temperature and demonstrates that it is possible to estimate the average size of coating layers from measurements of the magnetic field of the sample.

  16. NQR detection of explosive simulants using RF atomic magnetometers

    Science.gov (United States)

    Monti, Mark C.; Alexson, Dimitri A.; Okamitsu, Jeffrey K.

    2016-05-01

    Nuclear Quadrupole Resonance (NQR) is a highly selective spectroscopic method that can be used to detect and identify a number of chemicals of interest to the defense, national security, and law enforcement community. In the past, there have been several documented attempts to utilize NQR to detect nitrogen bearing explosives using induction sensors to detect the NQR RF signatures. We present here our work on the NQR detection of explosive simulants using optically pumped RF atomic magnetometers. RF atomic magnetometers can provide an order of magnitude (or more) improvement in sensitivity versus induction sensors and can enable mitigation of RF interference, which has classically has been a problem for conventional NQR using induction sensors. We present the theory of operation of optically pumped RF atomic magnetometers along with the result of laboratory work on the detection of explosive simulant material. An outline of ongoing work will also be presented along with a path for a fieldable detection system.

  17. Design and Analyses of a MEMS Based Resonant Magnetometer

    Directory of Open Access Journals (Sweden)

    Dahai Ren

    2009-09-01

    Full Text Available A novel design of a MEMS torsional resonant magnetometer based on Lorentz force is presented and fabricated. The magnetometer consists of a silicon resonator, torsional beam, excitation coil, capacitance plates and glass substrate. Working in a resonant condition, the sensor’s vibration amplitude is converted into the sensing capacitance change, which reflects the outside magnetic flux-density. Based on the simulation, the key structure parameters are optimized and the air damping effect is estimated. The test results of the prototype are in accordance with the simulation results of the designed model. The resolution of the magnetometer can reach 30 nT. The test results indicate its sensitivity of more than 400 mV/μT when operating in a 10 Pa vacuum environment.

  18. CMOS circuits for passive wireless microsystems

    CERN Document Server

    Yuan, Fei

    2011-01-01

    Here is a comprehensive examination of CMOS circuits for passive wireless microsystems. Covers design challenges, fundamental issues of ultra-low power wireless communications, radio-frequency power harvesting, and advanced design techniques, and more.

  19. Nanometer CMOS ICs from basics to ASICs

    CERN Document Server

    J M Veendrick, Harry

    2017-01-01

    This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

  20. Mobile high-T{sub c} DC SQUID magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    He, D.F.; Yoshizawa, M

    2003-05-01

    By optimizing the designing, we made a small size and low noise high-T{sub c} DC SQUID readout electronics with the modulation frequency of 80 kHz. The white flux noise was about 30 {mu}PHI{sub 0}/{radical}Hz when Sumitomo high-T{sub c} DC SQUID sensor was used. We also proved mobile high-T{sub c} DC SQUID magnetometer was feasible. By using a special compensation method, the SQUID magnetometer could keep locking when it swung about 20 degree sign in the earth field. Using this system and eddy-current nondestructive evaluation method, we successfully detected the defect in ferromagnetic material.

  1. A high-sensitivity push-pull magnetometer

    Science.gov (United States)

    Breschi, E.; Grujić, Z. D.; Knowles, P.; Weis, A.

    2014-01-01

    We describe our approach to atomic magnetometry based on the push-pull optical pumping technique. Cesium vapor is pumped and probed by a resonant laser beam whose circular polarization is modulated synchronously with the spin evolution dynamics induced by a static magnetic field. The magnetometer is operated in a phase-locked loop, and it has an intrinsic sensitivity below 20fT/√Hz , using a room temperature paraffin-coated cell. We use the magnetometer to monitor magnetic field fluctuations with a sensitivity of 300fT/√Hz .

  2. A high-sensitivity push-pull magnetometer

    CERN Document Server

    Breschi, E; Knowles, P; Weis, A

    2013-01-01

    We describe our approach to atomic magnetometry based on the push-pull optical pumping technique. Cesium vapor is pumped and probed by a resonant laser beam whose circular polarization is modulated synchronously with the spin evolution dynamics induced by a static magnetic field. The magnetometer is operated in a phase-locked loop, and it has an intrinsic sensitivity below 20fT/\\sqrt(Hz) using a room temperature paraffin-coated cell. We use the magnetometer to monitor magnetic field fluctuations with a sensitivity of 300fT/\\sqrt(Hz).

  3. Heisenberg-scaled magnetometer with dipolar spin-1 condensates

    Science.gov (United States)

    Xing, Haijun; Wang, Anbang; Tan, Qing-Shou; Zhang, Wenxian; Yi, Su

    2016-04-01

    We propose a scheme to realize a Heisenberg-scaled magnetometer using dipolar spin-1 condensates. The input state of magnetometer is prepared by slowly sweeping a transverse magnetic field to zero, which yields a highly entangled spin state of N atoms. We show that this process is protected by a parity symmetry such that the state preparation time is within the reach of the current experiment. We also propose a parity measurement with a Stern-Gerlach apparatus which is shown to approach the optimal measurement in the large atom number limit. Finally, we show that the phase estimation sensitivity of the proposed scheme roughly follows the Heisenberg scaling.

  4. Magnetoencephalography with a two-color pump probe atomic magnetometer.

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Cort N.

    2010-07-01

    The authors have detected magnetic fields from the human brain with a compact, fiber-coupled rubidium spin-exchange-relaxation-free magnetometer. Optical pumping is performed on the D1 transition and Faraday rotation is measured on the D2 transition. The beams share an optical axis, with dichroic optics preparing beam polarizations appropriately. A sensitivity of <5 fT/{radical}Hz is achieved. Evoked responses resulting from median nerve and auditory stimulation were recorded with the atomic magnetometer. Recordings were validated by comparison with those taken by a commercial magnetoencephalography system. The design is amenable to arraying sensors around the head, providing a framework for noncryogenic, whole-head magnetoencephalography.

  5. Three-axis atomic magnetometer based on spin precession modulation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, H. C.; Dong, H. F., E-mail: hfdong@buaa.edu.cn; Hu, X. Y.; Chen, L.; Gao, Y. [School of Instrumentation Science and Opto-Electronics Engineering, Beihang University, Beijing 100191 (China)

    2015-11-02

    We demonstrate a three-axis atomic magnetometer with one intensity-modulated pump beam and one orthogonal probe beam. The main field component is measured using the resonance of the pumping light, while the transverse field components are measured simultaneously using the optical rotation of the probe beam modulated by the spin precession. It is an all-optical magnetometer without using any modulation field or radio frequency field. Magnetic field sensitivity of 0.8 pT/Hz{sup 1∕2} is achieved under a bias field of 2 μT.

  6. Electromagnetic induction imaging with a radio-frequency atomic magnetometer

    CERN Document Server

    Deans, Cameron; Hussain, Sarah; Renzoni, Ferruccio

    2016-01-01

    We report on a compact, tunable, and scalable to large arrays imaging device, based on a radio-frequency optically pumped atomic magnetometer operating in magnetic induction tomography modality. Imaging of conductive objects is performed at room temperature, in an unshielded environment and without background subtraction. Conductivity maps of target objects exhibit not only excellent performance in terms of shape reconstruction but also demonstrate detection of sub-millimetric cracks and penetration of conductive barriers. The results presented here demonstrate the potential of a future generation of imaging instruments, which combine magnetic induction tomography and the unmatched performance of atomic magnetometers.

  7. Optimal configuration of receiving coils of SQUID-magnetometer

    CERN Document Server

    Ishikaev, S M

    2002-01-01

    Paper describes a SQUID-magnetometer receiving system based on the second order symmetric gradiometer. Four series connected coils of a superconducting transformer consisting of one niobium-titanium wire turn are cemented onto dewar outside. Due to signal compensation in all coils the given receiving system is unsusceptible to signal from specimen holder and it improves measurement accuracy. Using the described magnetometer one managed to observe abrupt changes of magnetization curves of a 100 x 100 cell square superconducting grid with the Josephson tunnel transitions

  8. Calibration of the Ørsted vector magnetometer

    DEFF Research Database (Denmark)

    Olsen, Nils; Tøffner-Clausen, Lars; Sabaka, T.J.

    2003-01-01

    The vector fluxgate magnetometer of the Orsted satellite is routinely calibrated by comparing its output with measurements of the absolute magnetic intensity from the Overhauser instrument, which is the second magnetometer of the satellite. We describe the method used for and the result obtained ...... coordinate system and the reference system of the star imager. This is done by comparing the magnetic and attitude measurements with a model of Earth's magnetic field. The Euler angles describing this rotation are determined in this way with an accuracy of better than 4 arcsec....

  9. Monolithic integration of GMR sensors for standard CMOS-IC current sensing

    Science.gov (United States)

    De Marcellis, A.; Reig, C.; Cubells-Beltrán, M.-D.; Madrenas, J.; Santos, J. D.; Cardoso, S.; Freitas, P. P.

    2017-09-01

    In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 μA.

  10. DUPIC fuel compatibility assessment

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hang Bok; Rho, G. H.; Park, J. W. [and others

    2000-03-01

    The purpose of this study is to assess the compatibility of DUPIC(Direct Use of Spent PWR Fuel in CANDU Reactors) fuel with the current CANDU 6 reactor, which is one of the technology being developed to utilize the spent PWR fuel in CANDU reactors. The phase 1 study of this project includes the feasibility analysis on applicability of the current core design method, the feasibility analysis on operation of the DUPIC fuel core, the compatibility analysis on individual reactor system, the sensitivity analysis on the fuel composition, and the economic analysis on DUPIC fuel cycle. The results of the validation calculations have confirmed that the current core analysis system is acceptable for the feasibility study of the DUPIC fuel compatibility analysis. The results of core simulations have shown that both natural uranium and DUPIC fuel cores are almost the same from the viewpoint of the operational performance. For individual reactor system including reactively devices, the functional requirements of each system are satisfied in general. However, because of the pronounced power flattening in the DUPIC core, the radiation damage on the critical components increases, which should be investigated more in the future. The DUPIC fuel composition heterogeneity dose not to impose any serious effect on the reactor operation if the fuel composition is adjusted. The economics analysis has been performed through conceptual design studies on the DUPIC fuel fabrication, fuel handling in a plant, and spent fuel disposal, which has shown that the DUPIC fuel cycle is comparable to the once-trough fuel cycle considering uncertainties associated with unit costs of the fuel cycle components. The results of Phase 1 study have shown that it is feasible to use the DUPIC fuel in CANDU reactors without major changes in hardware. However further studies are required to confirm the safety of the reactor under accident condition.

  11. Characteristics and performance of an intensity-modulated optically pumped magnetometer in comparison to the classical M(x) magnetometer.

    Science.gov (United States)

    Schultze, Volkmar; Ijsselsteijn, Rob; Scholtes, Theo; Woetzel, Stefan; Meyer, Hans-Georg

    2012-06-18

    We compare the performance of two methods for the synchronization of the atomic spins in optically pumped magnetometers: intensity modulation of the pump light and the classical M(x) method using B(1) field modulation. Both techniques use the same set-up and measure the resulting features of the light after passing a micro-fabricated Cs cell. The intensity-modulated pumping shows several advantages: better noise-limited magnetic field sensitivity, misalignment between pumping and spin synchronization is excluded, and magnetometer arrays without any cross-talk can be easily set up.

  12. Real-Time Attitude Independent Three Axis Magnetometer Calibration

    Science.gov (United States)

    Crassidis, John L.; Lai, Kok-Lam; Harman, Richard R.

    2003-01-01

    In this paper new real-time approaches for three-axis magnetometer sensor calibration are derived. These approaches rely on a conversion of the magnetometer-body and geomagnetic-reference vectors into an attitude independent observation by using scalar checking. The goal of the full calibration problem involves the determination of the magnetometer bias vector, scale factors and non-orthogonality corrections. Although the actual solution to this full calibration problem involves the minimization of a quartic loss function, the problem can be converted into a quadratic loss function by a centering approximation. This leads to a simple batch linear least squares solution. In this paper we develop alternative real-time algorithms based on both the extended Kalman filter and Unscented filter. With these real-time algorithms, a full magnetometer calibration can now be performed on-orbit during typical spacecraft mission-mode operations. Simulation results indicate that both algorithms provide accurate integer resolution in real time, but the Unscented filter is more robust to large initial condition errors than the extended Kalman filter. The algorithms are also tested using actual data from the Transition Region and Coronal Explorer (TRACE).

  13. Ionospheric travelling convection vortices observed by the Greenland magnetometer chain

    DEFF Research Database (Denmark)

    Kotsiaros, Stavros; Stolle, Claudia; Friis-Christensen, Eigil

    2013-01-01

    The Greenland magnetometer array continuously provides geomagnetic variometer data since the early eighties. With the polar cusp passing over it almost every day, the array is suitable to detect ionospheric traveling convection vortices (TCVs), which were rst detected by Friis-Christensen et al...

  14. Ørsted Pre-Flight Magnetometer Calibration Mission

    DEFF Research Database (Denmark)

    Risbo, T.; Brauer, Peter; Merayo, José M.G.

    2003-01-01

    modelling was developed and tested over several years and used for circle dividersted and other missions at test facilities in Europe, the United States and the Republic of South Africa. The verification of the test coil system using an Overhauser absolute scalar proton magnetometer is explained...

  15. Small Fluxgate Magnetometers: Development and Future Trends in Spain

    Science.gov (United States)

    Ciudad, David; Díaz-Michelena, Marina; Pérez, Lucas; Aroca, Claudio

    2010-01-01

    In this paper, we give an overview of the research on fluxgate magnetometers carried out in Spain. In particular we focus in the development of the planar-type instruments. We summarize the fabrication processes and signal processing developments as well as their use in complex systems and space. PMID:22294904

  16. Beacon Position and Attitude Navigation Aided by a Magnetometer

    Science.gov (United States)

    2010-06-01

    i · B . (12) When the scale and shift influences of the analog circuitry are considered, the actual measurement of the magnetometer is M = s...1350–1351. 22. Carta , D. G.; Lackowski, D. H. Estimation of Orthogonal Transformations in Strapdown Inertial Systems. IEEE Transactions on

  17. Very simple torque magnetometer for measuring magnetic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tejedor, M.; Fernandez, A.; Hernando, B.; Carrizo, J.

    1985-11-01

    A new torque magnetometer has been developed and built in order to measure magnetization saturation and perpendicular anisotropy of magnetic thin films. Its main characteristic is that it employs for counteraction the torque exerted on the sample in the same field used for exciting it. This gives rise to a great simplicity and sensitivity of the measuring system.

  18. Orthogonal thin film magnetometer using the anisotropic magnetoresistance effect

    NARCIS (Netherlands)

    Ridder, de René M.; Fluitman, Jan H.

    1984-01-01

    In an orthogonal thin film magnetometer a driving field oriented in the plane of a permalloy film along its hard-axis, saturates this film periodically in positive and negative direction. On return from saturation and in absence of a magnetic field component along the easy-axis, the magnetization in

  19. Magnetometer Based on the Opto-Electronic Oscillator

    Science.gov (United States)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

    2005-01-01

    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  20. Position-Finding Instrument Built Around a Magnetometer

    Science.gov (United States)

    Ketchum, Eleanor

    2004-01-01

    A coarse-positioning instrument is built around a three-axis magnetometer. The magnetometer is of a type that is made of inexpensive hardware and is suitable for use aboard spacecraft orbiting no more than 1,000 km above the surface of the Earth. A data processor programmed with suitable software and equipped with a central processing unit, random-access memory, programmable read-only memory, and interface circuitry for communication with external equipment are added to the basic magnetometer to convert it into a coarse-positioning instrument. Although the instrument was conceived for use aboard spacecraft, it could be useful for navigation on Earth under some circumstances. A major feature of the proposed instrument is an ability to generate a coarse estimate of its position in real time (that is, without start-up delay). Algorithms needed to solve the position equations have been developed. These include algorithms to work around gaps in measurement data that arise from a singularity near the minimum in the magnetic field of the Earth. Some work has been done to develop a prototype of this instrument incorporating a standard three-axis flux-gate magnetometer and a Pentium P-5 (or equivalent) processor with a clock frequency of 120 MHz. Alternatively, the processor could be of the 486 class. A computer model of the instrument has been completed and tested.

  1. A high precision magnetometer based on pulsed NMR

    NARCIS (Netherlands)

    Prigl, R; Haeberlen, U; Jungmann, K; Putlitz, GZ; vonWalter, P

    1996-01-01

    A magnetometer based on pulsed proton magnetic resonance has been developed and constructed. The system will be employed for an accurate measurement of the absolute magnetic field in the region of 1.45 T in a precision experiment on the muon's anomalous magnetic moment at the Brookhaven National Lab

  2. A new algorithm for attitude-independent magnetometer calibration

    Science.gov (United States)

    Alonso, Roberto; Shuster, Malcolm D.

    1994-01-01

    A new algorithm is developed for inflight magnetometer bias determination without knowledge of the attitude. This algorithm combines the fast convergence of a heuristic algorithm currently in use with the correct treatment of the statistics and without discarding data. The algorithm performance is examined using simulated data and compared with previous algorithms.

  3. Ionospheric travelling convection vortices observed by the Greenland magnetometer chain

    DEFF Research Database (Denmark)

    Kotsiaros, Stavros; Stolle, Claudia; Friis-Christensen, Eigil

    2013-01-01

    The Greenland magnetometer array continuously provides geomagnetic variometer data since the early eighties. With the polar cusp passing over it almost every day, the array is suitable to detect ionospheric traveling convection vortices (TCVs), which were rst detected by Friis-Christensen et al...

  4. Design and analysis of miniature tri-axial fluxgate magnetometer

    Science.gov (United States)

    Zhi, Menghui; Tang, Liang; Qiao, Donghai

    2017-02-01

    The detection technology of weak magnetic field is widely used in Earth resource survey and geomagnetic navigation. Useful magnetic field information can be obtained by processing and analyzing the measurement data from magnetic sensors. A miniature tri-axial fluxgate magnetometer is proposed in this paper. This miniature tri-axial fluxgate magnetometer with ring-core structure has a dynamic range of the Earth’s field ±65,000 nT, resolution of several nT. It has three independent parts placed in three perpendicular planes for measuring three orthogonal magnetic field components, respectively. A field-programmable gate array (FPGA) is used to generate stimulation signal, analog-to-digital (A/D) convertor control signal, and feedback digital-to-analog (D/A) control signal. Design and analysis details are given to improve the dynamic range, sensitivity, resolution, and linearity. Our prototype was measured and compared with a commercial standard Magson fluxgate magnetometer as a reference. The results show that our miniature fluxgate magnetometer can follow the Magson’s change trend well. When used as a magnetic compass, our prototype only has ± 0.3∘ deviation compared with standard magnetic compass.

  5. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-11-15

    The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

  6. New package for CMOS sensors

    Science.gov (United States)

    Diot, Jean-Luc; Loo, Kum Weng; Moscicki, Jean-Pierre; Ng, Hun Shen; Tee, Tong Yan; Teysseyre, Jerome; Yap, Daniel

    2004-02-01

    Cost is the main drawback of existing packages for C-MOS sensors (mainly CLCC family). Alternative packages are thus developed world-wide. And in particular, S.T.Microelectronics has studied a low cost alternative packages based on QFN structure, still with a cavity. Intensive work was done to optimize the over-molding operation forming the cavity onto a metallic lead-frame (metallic lead-frame is a low cost substrate allowing very good mechanical definition of the final package). Material selection (thermo-set resin and glue for glass sealing) was done through standard reliability tests for cavity packages (Moisture Sensitivity Level 3 followed by temperature cycling, humidity storage and high temperature storage). As this package concept is new (without leads protruding the molded cavity), the effect of variation of package dimensions, as well as board lay-out design, are simulated on package life time (during temperature cycling, thermal mismatch between board and package leads to thermal fatigue of solder joints). These simulations are correlated with an experimental temperature cycling test with daisy-chain packages.

  7. CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

  8. Swarm's absolute magnetometer experimental vector mode, an innovative capability for space magnetometry

    DEFF Research Database (Denmark)

    Hulot, Gauthier; Vigneron, Pierre; Leger, Jean-Michel;

    2015-01-01

    ESA's Swarm satellites carry a new generation of 4He absolute magnetometers (ASM), designed by CEA-Leti and developed in partnership with CNES. These instruments are the rst-ever space-born magnetometers to use a common sensor to simultaneously deliver 1Hz independent absolute scalar and vector r...... be monitored from space with such absolute vector magnetometers.......ESA's Swarm satellites carry a new generation of 4He absolute magnetometers (ASM), designed by CEA-Leti and developed in partnership with CNES. These instruments are the rst-ever space-born magnetometers to use a common sensor to simultaneously deliver 1Hz independent absolute scalar and vector...

  9. CMOS integrated switching power converters

    CERN Document Server

    Villar-Pique, Gerard

    2011-01-01

    This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and effi

  10. Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process

    Science.gov (United States)

    Mohammed Napiah, Zul Atfyi Fauzan; Hishiki, Takuya; Iiyama, Koichi

    2017-07-01

    Avalanche photodiodes fabricated by CMOS process (CMOS-APDs) have features of high avalanche gain below 10 V, wide bandwidth over 5 GHz, and easy integration with electronic circuits. In CMOS-APDs, guard ring structure is introduced for high-speed operation by canceling photo-generated carriers in the substrate at the sacrifice of the responsivity. We describe here wavelength dependence of the responsivity and the bandwidth of the CMOS-APDs with shorted and opened guard ring structure.

  11. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    OpenAIRE

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-01-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal a...

  12. Design and implementation of IEEE 802.11ac MAC controller in 65 nm CMOS process

    Science.gov (United States)

    Peng, Cheng; Bin, Wu; Yong, Hei

    2016-02-01

    An IEEE-802.11ac-1*1 wireless LAN system-on-a-chip (SoC) that integrates an analog front end, a digital base-band processor and a media access controller has been implemented in 65 nm CMOS technology. It can provide significantly increased throughput, high efficiency rate selection, and fully backward compatibility with the existing 802.11a/n WLAN protocols. Especially the measured maximum throughput of UDP traffic can be up to 267 Mbps. Project supported by the National Great Specific Project of China (No. 2012ZX03004004_001).

  13. Fourier transform acousto-optic imaging with a custom-designed CMOS smart-pixels array.

    Science.gov (United States)

    Barjean, Kinia; Contreras, Kevin; Laudereau, Jean-Baptiste; Tinet, Éric; Ettori, Dominique; Ramaz, François; Tualle, Jean-Michel

    2015-03-01

    We report acousto-optic imaging (AOI) into a scattering medium using a Fourier Transform (FT) analysis to achieve axial resolution. The measurement system was implemented using a CMOS smart-pixels sensor dedicated to the real-time analysis of speckle patterns. This first proof-of-principle of FT-AOI demonstrates some of its potential advantages, with a signal-to-noise ratio comparable to the one obtained without axial resolution, and with an acquisition rate compatible with a use on living biological tissue.

  14. Delay estimation for CMOS functional cells

    DEFF Research Database (Denmark)

    Madsen, Jan

    1991-01-01

    Presents a new RC tree network model for delay estimation of CMOS functional cells. The model is able to reflect topological changes within a cell, which is of particular interest when doing performance driven layout synthesis. Further, a set of algorithms to perform worst case analysis on arbitr......Presents a new RC tree network model for delay estimation of CMOS functional cells. The model is able to reflect topological changes within a cell, which is of particular interest when doing performance driven layout synthesis. Further, a set of algorithms to perform worst case analysis...... on arbitrary CMOS functional cells using the proposed delay model, is presented. Both model and algorithms have been implemented as a part of a cell compiler (CELLO) working in an experimental silicon compiler environment....

  15. CMOS Integrated Capacitive DC-DC Converters

    CERN Document Server

    Van Breussegem, Tom

    2013-01-01

    This book provides a detailed analysis of all aspects of capacitive DC-DC converter design: topology selection, control loop design and noise mitigation. Readers will benefit from the authors’ systematic overview that starts from the ground up, in-depth circuit analysis and a thorough review of recently proposed techniques and design methodologies.  Not only design techniques are discussed, but also implementation in CMOS is shown, by pinpointing the technological opportunities of CMOS and demonstrating the implementation based on four state-of-the-art prototypes.  Provides a detailed analysis of all aspects of capacitive DC-DC converter design;  Analyzes the potential of this type of DC-DC converter and introduces a number of techniques to unleash their full potential; Combines system theory with practical implementation techniques; Includes unique analysis of CMOS technology for this application; Provides in-depth analysis of four fabricated prototypes.

  16. Noise in sub-micron CMOS image sensors

    NARCIS (Netherlands)

    Wang, X.

    2008-01-01

    CMOS image sensors are devices that convert illumination signals (light intensity) into electronic signals. The goal of this thesis has been to analyze dominate noise sources in CMOS imagers and to improve the image quality by reducing the noise generated in the CMOS image sensor pixels.

  17. An RF (R) MS Power Detector in Standard CMOS

    NARCIS (Netherlands)

    Aa, van der F.H.J.

    2006-01-01

    This Master thesis describes the research towards the integration of RF power detectors for 3G cellular phones and base stations in CMOS technology1. It is a feasibility study with the emphasis on the identification of fundamental limitations of CMOS (particularly CMOS9) and of a number of squaring

  18. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    Science.gov (United States)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  19. 60-GHz CMOS phase-locked loops

    CERN Document Server

    Cheema, Hammad M; van Roermund, Arthur HM

    2010-01-01

    The promising high data rate wireless applications at millimeter wave frequencies in general and 60 GHz in particular have gained much attention in recent years. However, challenges related to circuit, layout and measurements during mm-wave CMOS IC design have to be overcome before they can become viable for mass market. ""60-GHz CMOS Phase-Locked Loops"" focusing on phase-locked loops for 60 GHz wireless transceivers elaborates these challenges and proposes solutions for them. The system level design to circuit level implementation of the complete PLL, along with separate implementations of i

  20. Scaling CMOS devices through alternative structures

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The conventional wisdom holds that CMOS devices cannot be scaled much further from where they are today because of several device physics limitations such as the large tunneling current in very thin gate dielectrics. It is shown that alternative device structures can allow CMOS transistors to scale by another 20 times. That is as large a factor of scaling as what the semiconductor industry accomplished in the past 25 years. There will be many opportunities and challenges in finding novel device structures and new processing techniques, and in understanding the physics of future devices.

  1. CMOS circuit design, layout and simulation

    CERN Document Server

    Baker, R Jacob

    2010-01-01

    The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

  2. Modeling of Amperometric Immunosensor for CMOS Integration

    Institute of Scientific and Technical Information of China (English)

    Ce Li; Haigang Yang; Shanhong Xia; Chao Bian

    2006-01-01

    A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper. The model parameters are extracted with several methods and verified by MATLAB and SPICE simulation. A CMOS potentiostat circuit required for conditioning the Amperometric immunosensor is also included in the circuit model. The mean square error norm of the simulated curve against the measured one is 8.65 × 10-17. The whole circuit has been fabricated in a 0.35am CMOS process.

  3. Integrated 60GHz RF beamforming in CMOS

    CERN Document Server

    Yu, Yikun; van Roermund, Arthur H M

    2011-01-01

    ""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

  4. Data Acquisition System for Russian Arctic Magnetometer Network

    Science.gov (United States)

    Janzhura, A.; Troshichev, O. A.; Takahashi, K.

    2010-12-01

    Monitoring of magnetic activity in the auroral zone is very essential for space weather problem. The big part of northern auroral zone lies in the Russian sector of Arctica. The Russian auroral zone stations are located far from the proper infrastructure and communications, and getting the data from the stations is complicated and nontrivial task. To resolve this problem a new acquisition system for magnetometers was implemented and developed in last few years, with the magnetic data transmission in real time that is important for many forecasting purpose. The system, based on microprocessor modules, is very reliable in hush climatic conditions. The information from the magnetic sensors transmits to AARI data center by satellite communication system and is presented at AARI web pages. This equipment upgrading of Russian polar magnetometer network is supported by the international RapidMag program.

  5. Space magnetometer based on an anisotropic magnetoresistive hybrid sensor

    Science.gov (United States)

    Brown, P.; Whiteside, B. J.; Beek, T. J.; Fox, P.; Horbury, T. S.; Oddy, T. M.; Archer, M. O.; Eastwood, J. P.; Sanz-Hernández, D.; Sample, J. G.; Cupido, E.; O'Brien, H.; Carr, C. M.

    2014-12-01

    We report on the design and development of a low resource, dual sensor vector magnetometer for space science applications on very small spacecraft. It is based on a hybrid device combining an orthogonal triad of commercial anisotropic magnetoresistive (AMR) sensors with a totem pole H-Bridge drive on a ceramic substrate. The drive enables AMR operation in the more sensitive flipped mode and this is achieved without the need for current spike transmission down a sensor harness. The magnetometer has sensitivity of better than 3 nT in a 0-10 Hz band and a total mass of 104 g. Three instruments have been launched as part of the TRIO-CINEMA space weather mission, inter-calibration against the International Geomagnetic Reference Field model makes it possible to extract physical signals such as field-aligned current deflections of 20-60 nT within an approximately 45 000 nT ambient field.

  6. Remote detection of rotating machinery with a portable atomic magnetometer.

    Science.gov (United States)

    Marmugi, Luca; Gori, Lorenzo; Hussain, Sarah; Deans, Cameron; Renzoni, Ferruccio

    2017-01-20

    We demonstrate remote detection of rotating machinery, using an atomic magnetometer at room temperature and in an unshielded environment. The system relies on the coupling of the AC magnetic signature of the target with the spin-polarized, precessing atomic vapor of a radio-frequency optical atomic magnetometer. The AC magnetic signatures of rotating equipment or electric motors appear as sidebands in the power spectrum of the atomic sensor, which can be tuned to avoid noisy bands that would otherwise hamper detection. A portable apparatus is implemented and experimentally tested. Proof-of-concept investigations are performed with test targets mimicking possible applications, and the operational conditions for optimum detection are determined. Our instrument provides comparable or better performance than a commercial fluxgate and allows detection of rotating machinery behind a wall. These results demonstrate the potential for ultrasensitive devices for remote industrial and usage monitoring, security, and surveillance.

  7. Space magnetometer based on an anisotropic magnetoresistive hybrid sensor.

    Science.gov (United States)

    Brown, P; Whiteside, B J; Beek, T J; Fox, P; Horbury, T S; Oddy, T M; Archer, M O; Eastwood, J P; Sanz-Hernández, D; Sample, J G; Cupido, E; O'Brien, H; Carr, C M

    2014-12-01

    We report on the design and development of a low resource, dual sensor vector magnetometer for space science applications on very small spacecraft. It is based on a hybrid device combining an orthogonal triad of commercial anisotropic magnetoresistive (AMR) sensors with a totem pole H-Bridge drive on a ceramic substrate. The drive enables AMR operation in the more sensitive flipped mode and this is achieved without the need for current spike transmission down a sensor harness. The magnetometer has sensitivity of better than 3 nT in a 0-10 Hz band and a total mass of 104 g. Three instruments have been launched as part of the TRIO-CINEMA space weather mission, inter-calibration against the International Geomagnetic Reference Field model makes it possible to extract physical signals such as field-aligned current deflections of 20-60 nT within an approximately 45,000 nT ambient field.

  8. Hansteen's magnetometer and the origin of the magnetic crusade.

    Science.gov (United States)

    Enebakk, Vidar

    2014-12-01

    In the early nineteenth century, Norwegian mathematician and astronomer Christopher Hansteen (1784-1873) contributed significantly to international collaboration in the study of terrestrial magnetism. In particular, Hansteen was influential in the origin and orientation of the magnetic lobby in Britain, a campaign which resulted in a global network of fixed geomagnetic observatories. In retrospect, however, his contribution was diminished, because his four-pole theory in Untersuchungen der Magnetismus der Erde (1819) was ultimately refuted by Carl Friedrich Gauss in Allgemeine Theorie des Erdmagnetismus (1839). Yet Hansteen's main contribution was practical rather than theoretical. His major impact was related to the circulation of his instruments and techniques. From the mid-1820s, 'Hansteen's magnetometer' was distributed all over the British Isles and throughout the international scientific community devoted to studying terrestrial magnetism. Thus in the decades before the magnetic crusade, Hansteen had established an international system of observation, standardization and representation based on measurements with his small and portable magnetometers.

  9. Assessing and Ensuring GOES-R Magnetometer Accuracy

    Science.gov (United States)

    Kronenwetter, Jeffrey; Carter, Delano R.; Todirita, Monica; Chu, Donald

    2016-01-01

    The GOES-R magnetometer accuracy requirement is 1.7 nanoteslas (nT). During quiet times (100 nT), accuracy is defined as absolute mean plus 3 sigma. During storms (300 nT), accuracy is defined as absolute mean plus 2 sigma. To achieve this, the sensor itself has better than 1 nT accuracy. Because zero offset and scale factor drift over time, it is also necessary to perform annual calibration maneuvers. To predict performance, we used covariance analysis and attempted to corroborate it with simulations. Although not perfect, the two generally agree and show the expected behaviors. With the annual calibration regimen, these predictions suggest that the magnetometers will meet their accuracy requirements.

  10. Versatile magnetometer assembly for characterizing magnetic properties of nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, J. F. D. F.; Bruno, A. C.; Louro, S. R. W. [Department of Physics, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22451-900 (Brazil)

    2015-10-15

    We constructed a versatile magnetometer assembly for characterizing iron oxide nanoparticles. The magnetometer can be operated at room temperature or inside a cryocooler at temperatures as low as 6 K. The magnetometer’s sensor can be easily exchanged and different detection electronics can be used. We tested the assembly with a non-cryogenic commercial Hall sensor and a benchtop multimeter in a four-wire resistance measurement scheme. A magnetic moment sensitivity of 8.5 × 10{sup −8} Am{sup 2} was obtained with this configuration. To illustrate the capability of the assembly, we synthesized iron oxide nanoparticles coated with different amounts of a triblock copolymer, Pluronic F-127, and characterized their magnetic properties. We determined that the polymer coating does not affect the magnetization of the particles at room temperature and demonstrates that it is possible to estimate the average size of coating layers from measurements of the magnetic field of the sample.

  11. Laser pumped (4)He magnetometer with light shift suppression.

    Science.gov (United States)

    Lin, Zaisheng; Wang, He; Peng, Xiang; Wu, Teng; Guo, Hong

    2016-11-01

    We report a laser-pumped (4)He atomic magnetometer with light shift suppression through the atomic sensor itself. A linearly polarized light is used to optically align the (4)He metastable atoms and we monitor the magneto-optical double resonance (MODR) signals produced by the left- and right-circularly orthogonal components. It is shown that light shift leads to the atomic alignment to orientation conversion effect, and thus, the difference between the two MODR signals. One of these two MODR signals is locked at the Larmor frequency and is used to measure the ambient magnetic field, while the differential signal is, simultaneously, fed back to suppress the light shift. The scheme could be of the advantage to the design of compact magnetometers by reducing the systematic errors due to light shift.

  12. On-chip magnetometer for characterization of superparamagnetic nanoparticles.

    Science.gov (United States)

    Kim, Kun Woo; Reddy, Venu; Torati, Sri Ramulu; Hu, Xing Hao; Sandhu, Adarsh; Kim, Cheol Gi

    2015-02-07

    An on-chip magnetometer was fabricated by integrating a planar Hall magnetoresistive (PHR) sensor with microfluidic channels. The measured in-plane field sensitivities of an integrated PHR sensor with NiFe/Cu/IrMn trilayer structure were extremely high at 8.5 μV Oe(-1). The PHR signals were monitored during the oscillation of 35 pL droplets of magnetic nanoparticles, and reversed profiles for the positive and negative z-fields were measured, where magnitudes increased with the applied z-field strength. The measured PHR signals for 35 pL droplets of magnetic nanoparticles versus applied z-fields showed excellent agreement with magnetization curves measured by a vibrating sample magnetometer (VSM) of 3 μL volume, where a PHR voltage of 1 μV change is equivalent to 0.309 emu cc(-1) of the volume magnetization with a magnetic moment resolution of ~10(-10) emu.

  13. Combined alternating gradient force magnetometer and susceptometer system

    Energy Technology Data Exchange (ETDEWEB)

    Pérez, M.; Mendizábal Vázquez, I. de; Aroca, C. [Dpto. Física Aplicada, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, Madrid 28040 (Spain); Ranchal, R. [Dpto. Física de Materiales, Facultad Ciencias Físicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, Madrid 28040 (Spain); Cobos, P. [ISOM, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, Madrid 28040 (Spain)

    2015-01-15

    We report the design, fabrication, and characterization of a new system that combines the performances of two different types of magnetic characterization systems, Alternating Gradient Force Magnetometers (AGFM) and susceptometers. The flexibility of our system is demonstrated by its capability to be used as any of them, AGFM or susceptometer, without any modification in the experimental set-up because of the electronics we have developed. Our system has a limit of sensitivity lower than 5 × 10{sup −7} emu. Moreover, its main advantage is demonstrated by the possibility of measuring small quantities of materials under DC or AC magnetic fields that cannot properly be measured with a commercial vibrating sample magnetometers or AGFM.

  14. High-speed polymerase chain reaction in CMOS-compatible chips

    OpenAIRE

    Erill Sagalés, Ivan

    2003-01-01

    Consultable des del TDX Títol obtingut de la portada digitalitzada En la última década del siglo XX, el campo de los microsistemas para análisis total (µ-TAS) y, más concretamente, el de los DNA-chips ha adquirido una importancia preponderante en el ámbito de los microsistemas. En gran parte, el creciente interés por estos dispositivos se debe a las substanciales mejoras que prometen: análisis más rápidos, baratos y automatizados, pero también es debido a la posibilidad de implementar t...

  15. Experimental demonstration of subdiffraction light confinement using all-dielectric CMOS-compatible metamaterials

    CERN Document Server

    Khavasi, Amin; Lu, Zeqin; Bojko, Richard

    2016-01-01

    A recent computational result suggests that the diffraction limit can be overcome by all-dielectric metamaterials (S. Jahani et. al., Optica 1, 96 (2014)). This substantially decreases crosstalk between dielectric waveguides paving the way for high density photonic circuits. Here, we experimentally demonstrate, on an standard silicon-on-insulator (SOI) platform, that using a simple metamaterial between two silicon strip waveguides results in about 10-fold increase in coupling length. The proposed structure may lead to significant reduction of size of devices in silicon photonics.

  16. Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

    Directory of Open Access Journals (Sweden)

    L. Tsybeskov

    2008-01-01

    Full Text Available Three-dimensional SiGe nanostructures grown on Si (SiGe/Si using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3–1.6 μm. At a high level of photoexcitation or carrier injection, thermal quenching of the luminescence intensity is suppressed and the previously confirmed type-II energy band alignment at Si/SiGe cluster heterointerfaces no longer controls radiative carrier recombination. Instead, a recently proposed dynamic type-I energy band alignment is found to be responsible for the strong decrease in carrier radiative lifetime and further increase in the luminescence quantum efficiency.

  17. CMOS-compatible dual-output silicon modulator for analog signal processing.

    Science.gov (United States)

    Spector, S J; Geis, M W; Zhou, G-R; Grein, M E; Gan, F; Popovic, M A; Yoon, J U; Lennon, D M; Ippen, E P; Kärtner, F Z; Lyszczarz, T M

    2008-07-21

    A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.

  18. Significant Crosstalk Reduction Using All-Dielectric CMOS-Compatible Metamaterials

    Science.gov (United States)

    Khavasi, Amin; Chrostowski, Lukas; Lu, Zeqin; Bojko, Richard

    2016-12-01

    A recent computational result suggests that highly confined modes can be realized by all-dielectric metamaterials (S. Jahani et. al., Optica 1, 96 (2014)). This substantially decreases crosstalk between dielectric waveguides, paving the way for high-density photonic circuits. Here, we experimentally demonstrate, on a standard silicon-on-insulator (SOI) platform, that using a simple metamaterial between two silicon strip waveguides results in about a 10-fold increase in coupling length. The proposed structure may lead to significant reduction in the size of devices in silicon photonics.

  19. Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics

    Science.gov (United States)

    Lever, Leon; Ikonić, Zoran; Valavanis, Alex; Kelsall, Robert W.

    2010-02-01

    A simulation technique for modeling optical absorption in Ge/SiGe multiple quantum well (MQW) heterostructures is described, based on a combined 6 × 6 k • p hole wave-function a one-band effective mass electron wavefunction calculation. Using this model, we employ strain engineering to target a specific applications-oriented wavelength, namely 1310 nm, and arrive at a design for a MQW structure to modulate light at this wavelength. The modal confinement in a proposed device is then found using finite-element modeling, and we estimate the performance of a proposed waveguide-integrated electroabsorption modulator.

  20. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-12-01

    Today\\'s mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  1. CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is...

  2. CMOS-Compatible SOI MESFETS for Radiation-Hardened DC-to-DC Converters

    Science.gov (United States)

    Thornton, Trevor; Lepkowski, William; Wilk, Seth

    2013-01-01

    A radiation-tolerant transistor switch has been developed that can operate between 196 and +150 C for DC-to-DC power conversion applications. A prototype buck regulator component was demonstrated to be performing well after a total ionizing dose of 300 krad(Si). The prototype buck converters showed good efficiencies at ultra-high switching speeds in the range of 1 to 10 MHz. Such high switching frequency will enable smaller, lighter buck converters to be developed as part of the next project. Switching regulators are widely used in commercial applications including portable consumer electronics.

  3. Low-power micro-scale CMOS-compatible silicon sensor on a suspended membrane.

    NARCIS (Netherlands)

    Kovalgin, A.Y.; Holleman, J.; Iordache, G.; Jenneboer, A.J.S.M.; Falke, F.; Zieren, V.; Goossens, M.J.

    2006-01-01

    In this paper we describe a new, simple and cheap silicon device operating at high temperature at a very low power of a few mW. The essential part of the device is a nano-size conductive link 10-100 nm in size (the so-called antifuse) formed in between two poly-silicon electrodes separated by a thin

  4. High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

    Science.gov (United States)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

  5. CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion

    Science.gov (United States)

    Turkulets, Yury; Silber, Amir; Ripp, Alexander; Sokolovsky, Mark; Shalish, Ilan

    2016-03-01

    Polysilicon receives attention nowadays as a means to incorporate 3D-structured photonic devices into silicon processes. However, doping of buried layers of a typical 3D structure has been a challenge. We present a method for doping of buried polysilicon layers by solid phase diffusion. Using an underlying silicon oxide layer as a dopant source facilitates diffusion of dopants into the bottom side of the polysilicon layer. The polysilicon is grown on top of the oxide layer, after the latter has been doped by ion implantation. Post-growth heat treatment drives in the dopant from the oxide into the polysilicon. To model the process, we studied the diffusion of the two most common silicon dopants, boron (B) and phosphorus (P), using secondary ion mass spectroscopy profiles. Our results show that shallow concentration profiles can be achieved in a buried polysilicon layer using the proposed technique. We present a quantitative 3D model for the diffusion of B and P in polysilicon, which turns the proposed method into an engineerable technique.

  6. Towards CMOS-compatible nanophotonics: Ultra-compact modulators using alternative plasmonic materials

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.;

    2013-01-01

    We propose several planar layouts of ultra-compact plasmonic modulators that utilize alternative plasmonic materials such as transparent conducting oxides and titanium nitride. The modulation is achieved by tuning the carrier concentration in a transparent conducting oxide layer into and out...... at the telecommunication wavelength. Our multilayer structures can be integrated with existing plasmonic and photonic waveguides as well as novel semiconductor-based hybrid photonic/electronic circuits....

  7. Wavelength Conversion of QPSK and 16-QAM Coherent Signals in a CMOS Compatible Spiral Waveguide

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Porto da Silva, Edson; Zibar, Darko

    2016-01-01

    We characterize a wavelength converter based on a 50-cm long low-loss spiral Hydex waveguide. A 10-nm FWM bandwidth is shown over which low OSNR penalty (< 0.5dB) wavelength conversion of QPSK and 16-QAM is reported....

  8. Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer

    KAUST Repository

    Ng, Tien Khee

    2012-02-10

    A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ?1.2 ?m, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ?11.5 dB in the wavelength range of 1.2-1.6 ?m. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates. © 1989-2012 IEEE.

  9. An Automated Home Made Low Cost Vibrating Sample Magnetometer

    Science.gov (United States)

    Kundu, S.; Nath, T. K.

    2011-07-01

    The design and operation of a homemade low cost vibrating sample magnetometer is described here. The sensitivity of this instrument is better than 10-2 emu and found to be very efficient for the measurement of magnetization of most of the ferromagnetic and other magnetic materials as a function of temperature down to 77 K and magnetic field upto 800 Oe. Both M(H) and M(T) data acquisition are fully automated employing computer and Labview software.

  10. Using Redundancy To Reduce Errors in Magnetometer Readings

    Science.gov (United States)

    Kulikov, Igor; Zak, Michail

    2004-01-01

    A method of reducing errors in noisy magnetic-field measurements involves exploitation of redundancy in the readings of multiple magnetometers in a cluster. By "redundancy"is meant that the readings are not entirely independent of each other because the relationships among the magnetic-field components that one seeks to measure are governed by the fundamental laws of electromagnetism as expressed by Maxwell's equations. Assuming that the magnetometers are located outside a magnetic material, that the magnetic field is steady or quasi-steady, and that there are no electric currents flowing in or near the magnetometers, the applicable Maxwell 's equations are delta x B = 0 and delta(raised dot) B = 0, where B is the magnetic-flux-density vector. By suitable algebraic manipulation, these equations can be shown to impose three independent constraints on the values of the components of B at the various magnetometer positions. In general, the problem of reducing the errors in noisy measurements is one of finding a set of corrected values that minimize an error function. In the present method, the error function is formulated as (1) the sum of squares of the differences between the corrected and noisy measurement values plus (2) a sum of three terms, each comprising the product of a Lagrange multiplier and one of the three constraints. The partial derivatives of the error function with respect to the corrected magnetic-field component values and the Lagrange multipliers are set equal to zero, leading to a set of equations that can be put into matrix.vector form. The matrix can be inverted to solve for a vector that comprises the corrected magnetic-field component values and the Lagrange multipliers.

  11. Magnetometer Response of Commonly Found Munitions Items and Munitions Surrogates

    Science.gov (United States)

    2012-01-12

    Predicted minimum magnetometer anomaly strength for a variety of munitions and surrogate items at a burial depth corresponding to 11x their respective...Response Live Site Demonstrations. The authors would like to thank Craig Murray of Parsons and Stephen Billings of Sky Research for their...variety of munitions and surrogate items at a burial depth corresponding to 11x their respective diameter. The sensor is assumed to be deployed as part

  12. An Automated Home Made Low Cost Vibrating Sample Magnetometer

    CERN Document Server

    Kundu, S

    2011-01-01

    The design and operation of a homemade low cost vibrating sample magnetometer is described here. The sensitivity of this instrument is better than 10-2 emu and found to be very efficient for the measurement of magnetization of most of the ferromagnetic and other magnetic materials as a function of temperature down to 77 K and magnetic field upto 800 Oe. Both M(H) and M(T) data acquisition are fully automated employing computer and Labview software

  13. Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

    KAUST Repository

    Ghoneim, Mohamed T.

    2016-05-18

    We present a comprehensive electrical performance assessment of hafnium silicate (HfSiOₓ) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied along and across the transistor channel lengths through a bending range of 0.5-5 cm radii for n-type and p-type FinFETs. Electrical measurements were carried out before and after bending, and all the bending measurements were taken in the actual flexed (bent) state to avoid relaxation and stress recovery. Global stress from substrate bending affects the devices in different ways compared with the well-studied uniaxial/biaxial localized strain. The global stress is dependent on the type of channel charge carriers, the orientation of the bending axis, and the physical gate length of the device. We, therefore, outline useful insights on the design strategies of flexible FinFETs in future free-form electronic applications.

  14. A 0.18 μm CMOS fluorescent detector system for bio-sensing application

    Institute of Scientific and Technical Information of China (English)

    Liu Nan; Chen Guoping; Hong Zhiliang

    2009-01-01

    A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier (CTIA), and a 12 bit pipelined analog-to-digital converter (ADC), and is implemented in a 0.18 μm standard CMOS process. Some special techniques, such as a "contact imaging" detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodi-ode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm2 and consumes 37 mW.

  15. Analog CMOS Nonlinear Cells and Their Applications in VLSI Signal and Information Processing

    Science.gov (United States)

    Khachab, Nabil Ibrahim

    1990-01-01

    The development of reconfigurable analog CMOS building blocks and their applications in analog VLSI is discussed and introduced in much the same way a logic gate is used in digital VLSI. They simultaneously achieve four -quadrant multiplication and division. These applications include multiplication, signal squaring, division, signal inversion, amplitude modulation. New all MOS implementations of the Hopfield like neural networks are developed by using the new cells. In addition new and novel techniques for sensor linearization and for MOSFET-C programmable-Q and omega_{n} filters are introduced. The new designs are simple, versatile, programmable and make effective use of analog CAD tools. Moreover, they are easily extendable to other technologies such as GaAs and BiCMOS. The objective of these designs is to achieve reduction in Silicon area and power consumption and reduce the interconnections between cells. It is also sought to provide a robust design that is CAD-compatible and make effective use of the standard cell library approach. This will offer more versatility and flexibility for analog signal processing systems and neural networks. Some of these new cells and a 3-neuron neural system are fabricated in a 2mum CMOS process. Experimental results of these circuits verify the validity of this new design approach.

  16. Evaluation of a scientific CMOS camera for astronomical observations

    Institute of Scientific and Technical Information of China (English)

    Peng Qiu; Yong-Na Mao; Xiao-Meng Lu; E Xiang; Xiao-Jun Jiang

    2013-01-01

    We evaluate the performance of the first generation scientific CMOS (sCMOS) camera used for astronomical observations.The sCMOS camera was attached to a 25 cm telescope at Xinglong Observatory,in order to estimate its photometric capabilities.We further compared the capabilities of the sCMOS camera with that of full-frame and electron multiplying CCD cameras in laboratory tests and observations.The results indicate the sCMOS camera is capable of performing photometry of bright sources,especially when high spatial resolution or temporal resolution is desired.

  17. A broadband two axis flux-gate magnetometer

    Directory of Open Access Journals (Sweden)

    P. Palangio

    1998-06-01

    Full Text Available A broadband two axis flux-gate magnetometer was developed to obtain high sensitivity in magnetotelluric measurements. In magnetotelluric sounding, natural low frequency electromagnetic fields are used to estimate the conductivity of the Earth's interior. Because variations in the natural magnetic field have small amplitude(10-100 pT in the frequency range 1 Hz to 100 Hz, highly sensitive magnetic sensors are required. In magnetotelluric measurements two long and heavy solenoids, which must be installed, in the field station, perpendicular to each other (north-south and east-west and levelled in the horizontal plane are used. The coil is a critical component in magnetotelluric measurements because very slight motions create noise voltages, particularly troublesome in wooded areas; generally the installation takes place in a shallow trench. Moreover the coil records the derivative of the variations rather than the magnetic field variations, consequently the transfer function (amplitude and phase of this sensor is not constant throughout the frequency range 0.001-100 Hz. The instrument, developed at L'Aquila Geomagnetic Observatory, has a flat response in both amplitude and phase in the frequency band DC-100 Hz, in addition it has low weight, low power, small volume and it is easier to install in the field than induction magnetometers. The sensivity of this magnetometer is 10 pT rms.

  18. Swarm Optimization-Based Magnetometer Calibration for Personal Handheld Devices

    Directory of Open Access Journals (Sweden)

    Naser El-Sheimy

    2012-09-01

    Full Text Available Inertial Navigation Systems (INS consist of accelerometers, gyroscopes and a processor that generates position and orientation solutions by integrating the specific forces and rotation rates. In addition to the accelerometers and gyroscopes, magnetometers can be used to derive the user heading based on Earth’s magnetic field. Unfortunately, the measurements of the magnetic field obtained with low cost sensors are usually corrupted by several errors, including manufacturing defects and external electro-magnetic fields. Consequently, proper calibration of the magnetometer is required to achieve high accuracy heading measurements. In this paper, a Particle Swarm Optimization (PSO-based calibration algorithm is presented to estimate the values of the bias and scale factor of low cost magnetometers. The main advantage of this technique is the use of the artificial intelligence which does not need any error modeling or awareness of the nonlinearity. Furthermore, the proposed algorithm can help in the development of Pedestrian Navigation Devices (PNDs when combined with inertial sensors and GPS/Wi-Fi for indoor navigation and Location Based Services (LBS applications.

  19. In-Flight Calibration Processes for the MMS Fluxgate Magnetometers

    Science.gov (United States)

    Bromund, K. R.; Leinweber, H. K.; Plaschke, F.; Strangeway, R. J.; Magnes, W.; Fischer, D.; Nakamura, R.; Anderson, B. J.; Russell, C. T.; Baumjohann, W.; Chutter, M.; Torbert, R. B.; Le, G.; Slavin, J. A.; Kepko, L.

    2015-12-01

    The calibration effort for the Magnetospheric Multiscale Mission (MMS) Analog Fluxgate (AFG) and Digital Fluxgate (DFG) magnetometers is a coordinated effort between three primary institutions: University of California, Los Angeles (UCLA); Space Research Institute, Graz, Austria (IWF); and Goddard Space Flight Center (GSFC). Since the successful deployment of all 8 magnetometers on 17 March 2015, the effort to confirm and update the ground calibrations has been underway during the MMS commissioning phase. The in-flight calibration processes evaluate twelve parameters that determine the alignment, orthogonalization, offsets, and gains for all 8 magnetometers using algorithms originally developed by UCLA and the Technical University of Braunschweig and tailored to MMS by IWF, UCLA, and GSFC. We focus on the processes run at GSFC to determine the eight parameters associated with spin tones and harmonics. We will also discuss the processing flow and interchange of parameters between GSFC, IWF, and UCLA. IWF determines the low range spin axis offsets using the Electron Drift Instrument (EDI). UCLA determines the absolute gains and sensor azimuth orientation using Earth field comparisons. We evaluate the performance achieved for MMS and give examples of the quality of the resulting calibrations.

  20. Polarization enhanced Nuclear Quadrupole Resonance with an atomic magnetometer

    Science.gov (United States)

    Malone, Michael W.; Barrall, Geoffrey A.; Espy, Michelle A.; Monti, Mark C.; Alexson, Dimitri A.; Okamitsu, Jeffrey K.

    2016-05-01

    Nuclear Quadrupole Resonance (NQR) has been demonstrated for the detection of 14-N in explosive compounds. Application of a material specific radio-frequency (RF) pulse excites a response typically detected with a wire- wound antenna. NQR is non-contact and material specific, however fields produced by NQR are typically very weak, making demonstration of practical utility challenging. For certain materials, the NQR signal can be increased by transferring polarization from hydrogen nuclei to nitrogen nuclei using external magnetic fields. This polarization enhancement (PE) can enhance the NQR signal by an order of magnitude or more. Atomic magnetometers (AM) have been shown to improve detection sensitivity beyond a conventional antenna by a similar amount. AM sensors are immune to piezo-electric effects that hamper conventional NQR, and can be combined to form a gradiometer for effective RF noise cancellation. In principle, combining polarization enhancement with atomic magnetometer detection should yield improvement in signal-to-noise ratio that is the product of the two methods, 100-fold or more over conventional NQR. However both methods are even more exotic than traditional NQR, and have never been combined due to challenges in operating a large magnetic field and ultra-sensitive magnetic field sensor in proximity. Here we present NQR with and without PE with an atomic magnetometer, demonstrating signal enhancement greater than 20-fold for ammonium nitrate. We also demonstrate PE for PETN using a traditional coil for detection with an enhancement factor of 10. Experimental methods and future applications are discussed.

  1. Results of the Magnetometer Navigation (MAGNAV)lnflight Experiment

    Science.gov (United States)

    Thienel, Julie K.; Harman, Richard R.; Bar-Itzhack, Itzhack Y.; Lambertson, Mike

    2004-01-01

    The Magnetometer Navigation (MAGNAV) algorithm is currently running as a flight experiment as part of the Wide Field Infrared Explorer (WIRE) Post-Science Engineering Testbed. Initialization of MAGNAV occurred on September 4, 2003. MAGNAV is designed to autonomously estimate the spacecraft orbit, attitude, and rate using magnetometer and sun sensor data. Since the Earth's magnetic field is a function of time and position, and since time is known quite precisely, the differences between the computed magnetic field and measured magnetic field components, as measured by the magnetometer throughout the entire spacecraft orbit, are a function of the spacecraft trajectory and attitude errors. Therefore, these errors are used to estimate both trajectory and attitude. In addition, the time rate of change of the magnetic field vector is used to estimate the spacecraft rotation rate. The estimation of the attitude and trajectory is augmented with the rate estimation into an Extended Kalman filter blended with a pseudo-linear Kalman filter. Sun sensor data is also used to improve the accuracy and observability of the attitude and rate estimates. This test serves to validate MAGNAV as a single low cost navigation system which utilizes reliable, flight qualified sensors. MAGNAV is intended as a backup algorithm, an initialization algorithm, or possibly a prime navigation algorithm for a mission with coarse requirements. Results from the first six months of operation are presented.

  2. Results of the Magnetometer Navigation (MAGNAV) Inflight Experiment

    Science.gov (United States)

    Thienel, Julie; Harman, Rick; Bar-Itzhack, Itzhack

    2004-01-01

    The Magnetometer Navigation (MAGNAV) algorithm is currently running as a flight experiment as part of the Wide Field Infrarad Explorer Post-Science Engineer- ing Testbed. Initialization of MAGNAV occured on September 4, 2004. MAGNAV is designed to autonomously estimate the spacecraft orbit, attitude, and rate using magnetometer and sun sensor data. Since the earth s magnetic field is a function of time and position, and since time is known quite precisely, the differences between the computed magnetic field and measured magnetic field components, as measured by the magnetometer throughout the entire spacecraft orbit, are a function of the spacecraft trajectory and attitude errors. Therefore, these errors are used to estimate both trajec- tory and attitude. In addition, the time rate of change of the magnetic field vector is used to estimate the spacecraft rotation rate. The estimation of the attitude and tra- jectory is augmented with the rate estimation into an Extended Kalman filter blended with a pseudc-linear Kalman filter. Sun sensor data is also used to improve the accu- racy and observability of the attitude and rate estimates. This test serves to validate MAGNAV as a single low cost navigation system which utilizes reliable, flight qualified sensors. MAGNAV is intended as a backup algorithm, an initialization algorithm, or possibly a prime navigation algorithm for a mission with coarse constraints.

  3. GPS/Magnetometer Based Satellite Navigation and Attitude Determination

    Science.gov (United States)

    Deutschmann, Julie; Bar-Itzhack, Itzhack; Harman, Rick; Bauer, Frank H. (Technical Monitor)

    2001-01-01

    In recent years algorithms were developed for orbit, attitude and angular-rate determination of Low Earth Orbiting (LEO) satellites. Those algorithms rely on measurements of magnetometers, which are standard, relatively inexpensive, sensors that are normally installed on every LEO satellite. Although magnetometers alone are sufficient for obtaining the desired information, the convergence of the algorithms to the correct values of the satellite orbital parameters, position, attitude and angular velocity is very slow. The addition of sun sensors reduces the convergence time considerably. However, for many LEO satellites the sun data is not available during portions of the orbit when the spacecraft (SC) is in the earth shadow. It is here where the GPS space vehicles (SV) can provide valuable support. This is clearly demonstrated in the present paper. Although GPS measurements alone can be used to obtain SC position, velocity, attitude and angular-rate, the use of magnetometers improve the results due to the synergistic effect of sensor fusion. Moreover, it is possible to obtain these results with less than three SVs. In this paper we introduce an estimation algorithm, which is a combination of an Extended Kalman Filter (EKF) and a Pseudo Linear Kalman Filter (PSELIKA).

  4. In-Flight Calibration Processes for the MMS Fluxgate Magnetometers

    Science.gov (United States)

    Bromund, K. R.; Leinweber, H. K.; Plaschke, F.; Strangeway, R. J.; Magnes, W.; Fischer, D.; Nakamura, R.; Anderson, B. J.; Russell, C. T.; Baumjohann, W.; Chutter, M.; Torbert, R. B.; Le, G.; Slavin, J. A.; Kepko, E. L.

    2015-01-01

    The calibration effort for the Magnetospheric Multiscale Mission (MMS) Analog Fluxgate (AFG) and DigitalFluxgate (DFG) magnetometers is a coordinated effort between three primary institutions: University of California, LosAngeles (UCLA); Space Research Institute, Graz, Austria (IWF); and Goddard Space Flight Center (GSFC). Since thesuccessful deployment of all 8 magnetometers on 17 March 2015, the effort to confirm and update the groundcalibrations has been underway during the MMS commissioning phase. The in-flight calibration processes evaluatetwelve parameters that determine the alignment, orthogonalization, offsets, and gains for all 8 magnetometers usingalgorithms originally developed by UCLA and the Technical University of Braunschweig and tailored to MMS by IWF,UCLA, and GSFC. We focus on the processes run at GSFC to determine the eight parameters associated with spin tonesand harmonics. We will also discuss the processing flow and interchange of parameters between GSFC, IWF, and UCLA.IWF determines the low range spin axis offsets using the Electron Drift Instrument (EDI). UCLA determines the absolutegains and sensor azimuth orientation using Earth field comparisons. We evaluate the performance achieved for MMS andgive examples of the quality of the resulting calibrations.

  5. Particle swarm optimization algorithm based low cost magnetometer calibration

    Science.gov (United States)

    Ali, A. S.; Siddharth, S., Syed, Z., El-Sheimy, N.

    2011-12-01

    Inertial Navigation Systems (INS) consist of accelerometers, gyroscopes and a microprocessor provide inertial digital data from which position and orientation is obtained by integrating the specific forces and rotation rates. In addition to the accelerometers and gyroscopes, magnetometers can be used to derive the absolute user heading based on Earth's magnetic field. Unfortunately, the measurements of the magnetic field obtained with low cost sensors are corrupted by several errors including manufacturing defects and external electro-magnetic fields. Consequently, proper calibration of the magnetometer is required to achieve high accuracy heading measurements. In this paper, a Particle Swarm Optimization (PSO) based calibration algorithm is presented to estimate the values of the bias and scale factor of low cost magnetometer. The main advantage of this technique is the use of the artificial intelligence which does not need any error modeling or awareness of the nonlinearity. The estimated bias and scale factor errors from the proposed algorithm improve the heading accuracy and the results are also statistically significant. Also, it can help in the development of the Pedestrian Navigation Devices (PNDs) when combined with the INS and GPS/Wi-Fi especially in the indoor environments

  6. A YBCO RF-SQUID magnetometer and its applications

    Science.gov (United States)

    Luwei, Zhou; Jingwu, Qiu; Xienfeng, Zhang; Zhiming, Tank; Yongjia, Qian

    1990-01-01

    An applicable RF-superconducting quantum interference detector (SQUID) magnetometer was made using a bulk sintered yttrium barium copper oxide (YBCO). The temperature range of the magnetometer is 77 to 300 K and the field range 0 to 0.1T. At 77 K, the equivalent flux noise of the SQUID is 5 x 10 to minus 4 power theta sub o/square root of Hz at the frequency range of 20 to 200 Hz. The experiments show that the SQUID noise at low-frequency end is mainly from 1/f noise. A coil test shows that the magnetic moment sensitivity delta m is 10 to the minus 6th power emu. The RF-SQUID is shielded in a YBCO cylinder with a shielding ability B sub in/B sub ex of about 10 to the minus 6th power when external dc magnetic field is about a few Oe. The magnetometer is successfully used in characterizing superconducting thin films.

  7. Detection Range of Airborne Magnetometers in Magnetic Anomaly Detection

    Directory of Open Access Journals (Sweden)

    Chengjing Li

    2015-11-01

    Full Text Available Airborne magnetometers are utilized for the small-range search, precise positioning, and identification of the ferromagnetic properties of underwater targets. As an important performance parameter of sensors, the detection range of airborne magnetometers is commonly set as a fixed value in references regardless of the influences of environment noise, target magnetic properties, and platform features in a classical model to detect airborne magnetic anomalies. As a consequence, deviation in detection ability analysis is observed. In this study, a novel detection range model is proposed on the basis of classic detection range models of airborne magnetometers. In this model, probability distribution is applied, and the magnetic properties of targets and the environment noise properties of a moving submarine are considered. The detection range model is also constructed by considering the distribution of the moving submarine during detection. A cell-averaging greatest-of-constant false alarm rate test method is also used to calculate the detection range of the model at a desired false alarm rate. The detection range model is then used to establish typical submarine search probabilistic models. Results show that the model can be used to evaluate not only the effects of ambient magnetic noise but also the moving and geomagnetic features of the target and airborne detection platform. The model can also be utilized to display the actual operating range of sensor systems.

  8. Exploring Interpersonal Compatibility in Groups.

    Science.gov (United States)

    Keyton, Joann

    This study investigated William Schutz's three-dimensional theory of interpersonal behavior and compatibility (FIRO) to determine its validity as a group measure of compatibility. Data were collected from 248 students enrolled in a multi-section course in small group communications at a large midwestern university. Subjects self-selected…

  9. Materials and processing approaches for foundry-compatible transient electronics

    Science.gov (United States)

    Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

    2017-01-01

    Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries. PMID:28652373

  10. Materials and processing approaches for foundry-compatible transient electronics

    Science.gov (United States)

    Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

    2017-07-01

    Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

  11. Design of Low Power CMOS Circuits using Leakage Control Transistor and Multi-Threshold CMOS Techniques

    OpenAIRE

    2012-01-01

    The scaling down of technology in CMOS circuits, results in the down scaling of threshold voltage thereby increasing the sub-threshold leakage current. An IC consists of many circuits of which some circuits consists critical path like full adder, whereas some circuits like multiplexer and decoder has no specified critical path. LECTOR is a technique for designing leakage power reduced CMOS circuits without affecting the dynamic power dissipation, which can be used for circuits with no specifi...

  12. Compatibility of conditionally specified models.

    Science.gov (United States)

    Chen, Hua Yun

    2010-04-01

    A conditionally specified joint model is convenient to use in fields such as spatial data modeling, Gibbs sampling, and missing data imputation. One potential problem with such an approach is that the conditionally specified models may be incompatible, which can lead to serious problems in applications. We propose an odds ratio representation of a joint density to study the issue and derive conditions under which conditionally specified distributions are compatible and yield a joint distribution. Our conditions are the simplest to verify compared with those proposed in the literature. The proposal also explicitly construct joint densities that are fully compatible with the conditionally specified densities when the conditional densities are compatible, and partially compatible with the conditional densities when they are incompatible. The construction result is then applied to checking the compatibility of the conditionally specified models. Ways to modify the conditionally specified models based on the construction of the joint models are also discussed when the conditionally specified models are incompatible.

  13. Platforms for integrated nonlinear optics compatible with silicon integrated circuits

    CERN Document Server

    Moss, David J

    2014-01-01

    Nonlinear photonic chips are capable of generating and processing signals all-optically with performance far superior to that possible electronically - particularly with respect to speed. Although silicon has been the leading platform for nonlinear optics, its high two-photon absorption at telecommunications wavelengths poses a fundamental limitation. We review recent progress in CMOS-compatible platforms for nonlinear optics, focusing on Hydex glass and silicon nitride and briefly discuss the promising new platform of amorphous silicon. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation, ultrafast optical pulse generation and measurement. We highlight their potential future impact as well as the challenges to achieving practical solutions for many key applications.

  14. A 24GHz Radar Receiver in CMOS

    NARCIS (Netherlands)

    Kwok, K.C.

    2015-01-01

    This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

  15. Low power SEU immune CMOS memory circuits

    Science.gov (United States)

    Liu, M. N.; Whitaker, Sterling

    1992-01-01

    The authors report a design improvement for CMOS static memory circuits hardened against single event upset (SEU) using a recently proposed logic/circuit design technique. This improvement drastically reduces static power consumption, reduces the number of transistors required in a D flip-flop design, and eliminates the possibility of capturing an upset state in the slave section during a clock transition.

  16. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern mul

  17. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

  18. A 24GHz Radar Receiver in CMOS

    NARCIS (Netherlands)

    Kwok, K.C.

    2015-01-01

    This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

  19. Design and realization of CMOS image sensor

    Science.gov (United States)

    Xu, Jian; Xiao, Zexin

    2008-02-01

    A project was presented that instrumental design of an economical CMOS microscope image sensor. A high performance, low price, black-white camera chip OV5116P was used as the core of the sensor circuit; Designing and realizing peripheral control circuit of sensor; Through the control on dial switch to realize different functions of the sensor chip in the system. For example: auto brightness level descending function on or off; gamma correction function on or off; auto and manual backlight compensation mode conversion and so on. The optical interface of sensor is designed for commercialization and standardization. The images of sample were respectively gathered with CCD and CMOS. Result of the experiment indicates that both performances were identical in several aspects as follows: image definition, contrast control, heating degree and the function can be adjusted according to the demand of user etc. The imperfection was that the CMOS with smaller field and higher noise than CCD; nevertheless, the maximal advantage of choosing the CMOS chip is its low cost. And its imaging quality conformed to requirement of the economical microscope image sensor.

  20. Analog IC reliability in nanometer CMOS

    CERN Document Server

    Maricau, Elie

    2013-01-01

    This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed.   The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.   ·         Enables readers to understand long-term reliability of an integrated circuit; ·         Reviews CMOS unreliability effects, with focus on those that will emerge in future CMOS nodes; ·         Provides overview of models for...

  1. CMOS VHF transconductance-C lowpass filter

    NARCIS (Netherlands)

    Nauta, B.

    1990-01-01

    Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response

  2. Linear CMOS transconductance element for VHF filters

    NARCIS (Netherlands)

    Nauta, B.; Seevinck, E.

    1989-01-01

    A differential transconductance element based on CMOS inverters is presented. With this circuit a linear, tunable integrator for very high-frequency continuous-time integrated filters can be made. This integrator has good linearity properties (THD<0.04%, Vipp=1.8 V), nondominant poles in the gigaher

  3. Method and circuitry for CMOS transconductor linearization

    NARCIS (Netherlands)

    Kundur Subramaniyan, Harish; Klumperink, Eric; Srinivasan, Venkatesh; Kiaei, Ali; Nauta, Bram

    2016-01-01

    Third order distortion is reduced in a CMOS transconductor circuit that includes a first N-channel transistor and a first P-channel transistor, gates of the first N-channel transistor and the first P-channel transistor being coupled to receive an input signal. Drains of the first N-channel transisto

  4. Compatible quantum theory.

    Science.gov (United States)

    Friedberg, R; Hohenberg, P C

    2014-09-01

    Formulations of quantum mechanics (QM) can be characterized as realistic, operationalist, or a combination of the two. In this paper a realistic theory is defined as describing a closed system entirely by means of entities and concepts pertaining to the system. An operationalist theory, on the other hand, requires in addition entities external to the system. A realistic formulation comprises an ontology, the set of (mathematical) entities that describe the system, and assertions, the set of correct statements (predictions) the theory makes about the objects in the ontology. Classical mechanics is the prime example of a realistic physical theory. A straightforward generalization of classical mechanics to QM is hampered by the inconsistency of quantum properties with classical logic, a circumstance that was noted many years ago by Birkhoff and von Neumann. The present realistic formulation of the histories approach originally introduced by Griffiths, which we call 'compatible quantum theory (CQT)', consists of a 'microscopic' part (MIQM), which applies to a closed quantum system of any size, and a 'macroscopic' part (MAQM), which requires the participation of a large (ideally, an infinite) system. The first (MIQM) can be fully formulated based solely on the assumption of a Hilbert space ontology and the noncontextuality of probability values, relying in an essential way on Gleason's theorem and on an application to dynamics due in large part to Nistico. Thus, the present formulation, in contrast to earlier ones, derives the Born probability formulas and the consistency (decoherence) conditions for frameworks. The microscopic theory does not, however, possess a unique corpus of assertions, but rather a multiplicity of contextual truths ('c-truths'), each one associated with a different framework. This circumstance leads us to consider the microscopic theory to be physically indeterminate and therefore incomplete, though logically coherent. The completion of the theory

  5. Compatible quantum theory

    Science.gov (United States)

    Friedberg, R.; Hohenberg, P. C.

    2014-09-01

    Formulations of quantum mechanics (QM) can be characterized as realistic, operationalist, or a combination of the two. In this paper a realistic theory is defined as describing a closed system entirely by means of entities and concepts pertaining to the system. An operationalist theory, on the other hand, requires in addition entities external to the system. A realistic formulation comprises an ontology, the set of (mathematical) entities that describe the system, and assertions, the set of correct statements (predictions) the theory makes about the objects in the ontology. Classical mechanics is the prime example of a realistic physical theory. A straightforward generalization of classical mechanics to QM is hampered by the inconsistency of quantum properties with classical logic, a circumstance that was noted many years ago by Birkhoff and von Neumann. The present realistic formulation of the histories approach originally introduced by Griffiths, which we call ‘compatible quantum theory (CQT)’, consists of a ‘microscopic’ part (MIQM), which applies to a closed quantum system of any size, and a ‘macroscopic’ part (MAQM), which requires the participation of a large (ideally, an infinite) system. The first (MIQM) can be fully formulated based solely on the assumption of a Hilbert space ontology and the noncontextuality of probability values, relying in an essential way on Gleason's theorem and on an application to dynamics due in large part to Nistico. Thus, the present formulation, in contrast to earlier ones, derives the Born probability formulas and the consistency (decoherence) conditions for frameworks. The microscopic theory does not, however, possess a unique corpus of assertions, but rather a multiplicity of contextual truths (‘c-truths’), each one associated with a different framework. This circumstance leads us to consider the microscopic theory to be physically indeterminate and therefore incomplete, though logically coherent. The

  6. Electron lithography STAR design guidelines. Part 3: The mosaic transistor array applied to custom microprocessors. Part 4: Stores logic arrays, SLAs implemented with clocked CMOS

    Science.gov (United States)

    Trotter, J. D.

    1982-01-01

    The Mosaic Transistor Array is an extension of the STAR system developed by NASA which has dedicated field cells designed to be specifically used in semicustom microprocessor applications. The Sandia radiation hard bulk CMOS process is utilized in order to satisfy the requirements of space flights. A design philosophy is developed which utilizes the strengths and recognizes the weaknesses of the Sandia process. A style of circuitry is developed which incorporates the low power and high drive capability of CMOS. In addition the density achieved is better than that for classic CMOS, although not as good as for NMOS. The basic logic functions for a data path are designed with compatible interface to the STAR grid system. In this manner either random logic or PLA type structures can be utilized for the control logic.

  7. UV lithography-based protein patterning on silicon: Towards the integration of bioactive surfaces and CMOS electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lenci, S., E-mail: silvia.lenci@iet.unipi.it [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Tedeschi, L. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy); Pieri, F. [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Domenici, C. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy)

    2011-08-01

    A simple and fast methodology for protein patterning on silicon substrates is presented, providing an insight into possible issues related to the interaction between biological and microelectronic technologies. The method makes use of standard photoresist lithography and is oriented towards the implementation of biosensors containing Complementary Metal-Oxide-Semiconductor (CMOS) conditioning circuitry. Silicon surfaces with photoresist patterns were prepared and hydroxylated by means of resist- and CMOS backend-compatible solutions. Subsequent aminosilane deposition and resist lift-off in organic solvents resulted into well-controlled amino-terminated geometries. The discussion is focused on resist- and CMOS-compatibility problems related to the used chemicals. Some samples underwent gold nanoparticle (Au NP) labeling and Scanning Electron Microscopy (SEM) observation, in order to investigate the quality of the silane layer. Antibodies were immobilized on other samples, which were subsequently exposed to a fluorescently labeled antigen. Fluorescence microscopy observation showed that this method provides spatially selective immobilization of protein layers onto APTES-patterned silicon samples, while preserving protein reactivity inside the desired areas and low non-specific adsorption elsewhere. Strong covalent biomolecule binding was achieved, giving stable protein layers, which allows stringent binding conditions and a good binding specificity, really useful for biosensing.

  8. CMOS Image Sensor with a Built-in Lane Detector.

    Science.gov (United States)

    Hsiao, Pei-Yung; Cheng, Hsien-Chein; Huang, Shih-Shinh; Fu, Li-Chen

    2009-01-01

    This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%.

  9. CMOS Image Sensor with a Built-in Lane Detector

    Directory of Open Access Journals (Sweden)

    Li-Chen Fu

    2009-03-01

    Full Text Available This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC or Digital Signal Processor (DSP, the proposed imager, without extra Analog to Digital Converter (ADC circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 x 2,389.8 mm, and the package uses 40 pin Dual-In-Package (DIP. The pixel cell size is 18.45 x 21.8 mm and the core size of photodiode is 12.45 x 9.6 mm; the resulting fill factor is 29.7%.

  10. Graphene/Si CMOS hybrid hall integrated circuits.

    Science.gov (United States)

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-07

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  11. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    Science.gov (United States)

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  12. COMPATIBILITY OF BENTONITE AND DNAPLS

    Science.gov (United States)

    The compatibility of dense non-aqueous phase liquids (DNAPLs), trichloroethylene (TCE), methylene chloride (MC), and creosote with commercially available sodium bentonite pellets was evaluated using stainless steel, double-ring, falling-head permeameters. The Hydraulic conductiv...

  13. Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

    Science.gov (United States)

    Liu, Yu-Chia; Tsai, Ming-Han; Tang, Tsung-Lin; Fang, Weileun

    2011-10-01

    This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

  14. Stray magnetic field compensation with a scalar atomic magnetometer

    Science.gov (United States)

    Belfi, J.; Bevilacqua, G.; Biancalana, V.; Cecchi, R.; Dancheva, Y.; Moi, L.

    2010-06-01

    We describe a system for the compensation of time-dependent stray magnetic fields using a dual channel scalar magnetometer based on nonlinear Faraday rotation in synchronously optically pumped Cs vapor. We detail the active control strategy, with an emphasis on the electronic circuitry, based on a simple phase-locked-loop integrated circuit. The performance and limits of the system developed are tested and discussed. The system was applied to significantly improve the detection of free induction decay signals from protons of remotely magnetized water precessing in an ultralow magnetic field.

  15. Stray Magnetic Field Compensation with a Scalar Atomic Magnetometer

    CERN Document Server

    Belfi, Jacopo; Biancalana, Valerio; Cecchi, Roberto; Dancheva, Yordanka; Moi, Luigi

    2010-01-01

    We describe a system for the compensation of time-dependent stray magnetic fields using a dual channel scalar magnetometer based on non-linear Faraday rotation in synchronously optically pumped Cs vapour. We detail the active control strategy, with an emphasis on the electronic circuitry, based on a simple phase-locked-loop integrated circuit. The performance and limits of the system developed are tested and discussed. The system was applied to significantly improve the detection of free induction decay signals from protons of remotely magnetized water precessing in an ultra-low magnetic field.

  16. Eddy current imaging with an atomic radio-frequency magnetometer

    CERN Document Server

    Wickenbrock, Arne; Blanchard, John W; Budker, Dmitry

    2016-01-01

    We use a radio-frequency $^{85}$Rb alkali-vapor cell magnetometer based on a paraffin-coated cell with long spin-coherence time and a small, low-inductance driving coil to create highly resolved conductivity maps of different objects. We resolve sub-mm features in conductive objects, we characterize the frequency response of our technique, and by operating at frequencies up to 250 kHz we are able to discriminate between differently conductive materials based on the induced response. The method is suited to cover a wide range of driving frequencies and can potentially be used for detecting non-metallic objects with low DC conductivity.

  17. Four-channel optically pumped atomic magnetometer for magnetoencephalography.

    Science.gov (United States)

    Colombo, Anthony P; Carter, Tony R; Borna, Amir; Jau, Yuan-Yu; Johnson, Cort N; Dagel, Amber L; Schwindt, Peter D D

    2016-07-11

    We have developed a four-channel optically pumped atomic magnetometer for magnetoencephalography (MEG) that incorporates a passive diffractive optical element (DOE). The DOE allows us to achieve a long, 18-mm gradiometer baseline in a compact footprint on the head. Using gradiometry, the sensitivities of the channels are 1/2, and the 3-dB bandwidths are approximately 90 Hz, which are both sufficient to perform MEG. Additionally, the channels are highly uniform, which offers the possibility of employing standard MEG post-processing techniques. This module will serve as a building block of an array for magnetic source localization.

  18. Three axis vector atomic magnetometer utilizing polarimetric technique.

    Science.gov (United States)

    Pradhan, Swarupananda

    2016-09-01

    The three axis vector magnetic field measurement based on the interaction of a single elliptically polarized light beam with an atomic system is described. The magnetic field direction dependent atomic responses are extracted by the polarimetric detection in combination with laser frequency modulation and magnetic field modulation techniques. The magnetometer geometry offers additional critical requirements like compact size and large dynamic range for space application. Further, the three axis magnetic field is measured using only the reflected signal (one polarization component) from the polarimeter and thus can be easily expanded to make spatial array of detectors and/or high sensitivity field gradient measurement as required for biomedical application.

  19. Three axis vector atomic magnetometer utilizing polarimetric technique

    CERN Document Server

    Pradhan, Swarupananda

    2016-01-01

    The three axis magnetic field measurement based on the interaction of a single elliptically polarized light beam with an atomic system is described. The magnetic field direction dependent atomic responses are extracted by the polarimetric detection in combination with laser frequency modulation and magnetic field modulation techniques. The magnetometer offers additional critical requirements like compact size and large dynamic range for space application. Further, the three axis magnetic field is measured using only reflected signal from the polarimeter, thus can be easily expanded to make spatial array of detectors or / and high sensitivity field gradient measurement as required for biomedical application.

  20. Magnetometer-Only Attitude and Rate Estimates for Spinning Spacecraft

    Science.gov (United States)

    Challa, M.; Natanson, G.; Ottenstein, N.

    2000-01-01

    A deterministic algorithm and a Kalman filter for gyroless spacecraft are used independently to estimate the three-axis attitude and rates of rapidly spinning spacecraft using only magnetometer data. In-flight data from the Wide-Field Infrared Explorer (WIRE) during its tumble, and the Fast Auroral Snapshot Explorer (FAST) during its nominal mission mode are used to show that the algorithms can successfully estimate the above in spite of the high rates. Results using simulated data are used to illustrate the importance of accurate and frequent data.

  1. Miniature scientific-grade induction magnetometer for cubesats

    Science.gov (United States)

    Pronenko, Vira

    2017-04-01

    One of the main areas of space research is the study and forecasting of space weather. The society is more and more depending nowadays on satellite technology and communications, so it is vital to understand the physical process in the solar-terrestrial system which may disturb them. Besides the solar radiation and Space Weather effects, the Earth's ionosphere is also modified by the ever increasing industrial activity. There have been also multiple reports relating VLF and ELF wave activity to atmospheric storms and geological processes, such as earthquakes and volcanic activity. For advancing in these fields, the AC magnetic field permanent monitoring is crucial. Using the cubesat technology would allow increasing the number of measuring points dramatically. It is necessary to mention that the cubesats use for scientific research requires the miniaturization of scientific sensors what is a serious problem because the reduction of their dimensions leads, as a rule, to the parameters degradation, especially of sensitivity threshold. Today, there is no basic model of a sensitive miniature induction magnetometer. Even the smallest one of the known - for the Bepi-Colombo mission to Mercury - is too big for cubesats. The goal of the present report is to introduce the new design of miniature three-component sensor for measurement of alternative vector magnetic fields - induction magnetometer (IM). The study directions were concentrated on the ways and possibilities to create the miniature magnetometer with best combination of parameters. For this a set of scientific and technological problems, mostly aimed at the sensor construction improvement, was solved. The most important parameter characterizing magnetometer quality is its own magnetic noise level (NL). The analysis of the NL influencing factors is made and the ways to decrease it are discussed in the report. Finally, the LEMI-151 IM was developed for the SEAM cubesat mission with optimal performances within the

  2. High resolution polar Kerr magnetometer for nanomagnetism and nanospintronics.

    Science.gov (United States)

    Cormier, M; Ferré, J; Mougin, A; Cromières, J-P; Klein, V

    2008-03-01

    A new high resolution polar magneto-optical (MO) Kerr magnetometer, devoted to the study of nanometer sized elements with perpendicular magnetic anisotropy, is described. The unique performances of this setup in terms of sensitivity (1.2x10(-15) emu), stability (lateral drift +/-35 nm over 3 h), and resolution (laser spot full width at half maximum down to 470 nm) are demonstrated, and illustrated by Kerr hysteresis loop measurements on a unique ultrathin magnetic nanodot, and over small segments of ultranarrow magnetic tracks. Large scanning MO Kerr microscopy images were also obtained with the same performances.

  3. Three axis vector atomic magnetometer utilizing polarimetric technique

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Swarupananda, E-mail: spradhan@barc.gov.in, E-mail: pradhans75@gmail.com [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Mumbai 400085, India and Homi Bhabha National Institute, Department of Atomic Energy, Mumbai 400094 (India)

    2016-09-15

    The three axis vector magnetic field measurement based on the interaction of a single elliptically polarized light beam with an atomic system is described. The magnetic field direction dependent atomic responses are extracted by the polarimetric detection in combination with laser frequency modulation and magnetic field modulation techniques. The magnetometer geometry offers additional critical requirements like compact size and large dynamic range for space application. Further, the three axis magnetic field is measured using only the reflected signal (one polarization component) from the polarimeter and thus can be easily expanded to make spatial array of detectors and/or high sensitivity field gradient measurement as required for biomedical application.

  4. DESIGN AND IMPLEMETTATION OF CMOS IMAGE SENSOR

    Institute of Scientific and Technical Information of China (English)

    Liu Yu; Wang Guoyu

    2007-01-01

    A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35 μm process along with its design and implementation is introduced in this paper. The pixel architecture of Active Pixel Sensor (APS) is used in the chip, which comprises a 256×256 pixel array together with column amplifiers, scan array circuits, series interface, control logic and Analog-Digital Converter (ADC). With the use of smart layout design, fill factor of pixel cell is 43%. Moreover, a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used.The CMOS image sensor chip is implemented based on the 0.35 μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.

  5. Spatio-temporal simulation in subthreshold CMOS

    Science.gov (United States)

    Neeley, John; Harris, John G.

    1997-05-01

    This paper reports on the design and chip measurements from a CMOS chaotic oscillator operating by itself and connected in a ring of four similar oscillators. The oscillator is autonomous and generates signals with three state variables analogous to Chua's circuit. For commensurate bandwidth, this design utilizes currents and capacitors over 200 times smaller than above threshold CMOS realizations. Also, all circuit elements are on chip. The resulting voltage-controlled bifurcation parameters simplify exploration of the circuit's dynamics, alleviating the need to interchange physical components. This combination of reduced size and variable parameters make the design suitable for single-chip VLSI synthesis of higher dimensional chaotic circuits, including coupled maps generating spatio-temporal chaos and systems exploiting chaos synchronization.

  6. Noise in a CMOS digital pixel sensor

    Institute of Scientific and Technical Information of China (English)

    Zhang Chi; Yao Suying; Xu Jiangtao

    2011-01-01

    Based on the study of noise performance in CMOS digital pixel sensor (DPS),a mathematical model of noise is established with the pulse-width-modulation (PWM) principle.Compared with traditional CMOS image sensors,the integration time is different and A/D conversion is implemented in each PWM DPS pixel.Then,the quantitative calculating formula of system noise is derived.It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region.In this model,photodiode shot noise does not vary with luminance,but dark current shot noise does.According to increasing photodiode capacitance and the comparator's reference voltage or optimizing the mismatch in the comparator,the total noise can be reduced.These results serve as a guideline for the design of PWM DPS.

  7. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2001-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

  8. A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process

    Science.gov (United States)

    Haijun, Gao; Lingling, Sun; Xiaofei, Kuang; Liheng, Lou

    2012-07-01

    A low-phase-noise wideband ring oscillator with coarse and fine tuning techniques implemented in a standard 65 nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and a switched capacitor array is introduced to produce the lower VCO gain required to suppress this effect. A two-dimensional high-density stacked MOM-capacitor was adopted as the switched capacitor to make the proposed ring VCO compatible with standard CMOS processes. The designed ring VCO exhibits an output frequency from 480 to 1100 MHz, resulting in a tuning range of 78%, and the measured phase noise is -120 dBc/Hz @ 1 MHz at 495 MHz output. The VCO core consumes 3.84 mW under a 1.2 V supply voltage and the corresponding FOM is -169 dBc/Hz.

  9. A General Design Methodology for Synchronous Early-Completion-Prediction Adders in Nano-CMOS DSP Architectures

    Directory of Open Access Journals (Sweden)

    Mauro Olivieri

    2013-01-01

    Full Text Available Synchronous early-completion-prediction adders (ECPAs are used for high clock rate and high-precision DSP datapaths, as they allow a dominant amount of single-cycle operations even if the worst-case carry propagation delay is longer than the clock period. Previous works have also demonstrated ECPA advantages for average leakage reduction and NBTI effects reduction in nanoscale CMOS technologies. This paper illustrates a general systematic methodology to design ECPA units, targeting nanoscale CMOS technologies, which is not available in the current literature yet. The method is fully compatible with standard VLSI macrocell design tools and standard adder structures and includes automatic definition of critical test patterns for postlayout verification. A design example is included, reporting speed and power data superior to previous works.

  10. Charge pump-based MOSFET-only 1.5-bit pipelined ADC stage in digital CMOS technology

    Science.gov (United States)

    Singh, Anil; Agarwal, Alpana

    2016-10-01

    A simple low-power and low-area metal-oxide-semiconductor field-effect transistor-only fully differential 1.5-bit pipelined analog-to-digital converter stage is proposed and designed in Taiwan Semiconductor Manufacturing Company 0.18 μm-technology using BSIM3v3 parameters with supply voltage of 1.8 V in inexpensive digital complementary metal-oxide semiconductor (CMOS) technology. It is based on charge pump technique to achieve the desired voltage gain of 2, independent of capacitor mismatch and avoiding the need of power hungry operational amplifier-based architecture to reduce the power, Si area and cost. Various capacitances are implemented by metal-oxide semiconductor capacitors, offering compatibility with cheaper digital CMOS process in order to reduce the much required manufacturing cost.

  11. Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

    CERN Document Server

    El-Khatib, Ziad; Mahmoud, Samy A

    2012-01-01

    This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

  12. Cantilever-Based Biosensors in CMOS Technology

    CERN Document Server

    Kirstein, K -U; Zimmermann, M; Vancura, C; Volden, T; Song, W H; Lichtenberg, J; Hierlemannn, A

    2011-01-01

    Single-chip CMOS-based biosensors that feature microcantilevers as transducer elements are presented. The cantilevers are functionalized for the capturing of specific analytes, e.g., proteins or DNA. The binding of the analyte changes the mechanical properties of the cantilevers such as surface stress and resonant frequency, which can be detected by an integrated Wheatstone bridge. The monolithic integrated readout allows for a high signal-to-noise ratio, lowers the sensitivity to external interference and enables autonomous device operation.

  13. CMOS current amplifiers : speed versus nonlinearity

    OpenAIRE

    2000-01-01

    This work deals with analogue integrated circuit design using various types of current-mode amplifiers. These circuits are analysed and realised using modern CMOS integration technologies. The dynamic nonlinearities of these circuits are discussed in detail as in the literature only linear nonidealities and static nonlinearities are conventionally considered. For the most important open-loop current-mode amplifier, the second-generation current-conveyor (CCII), a macromodel is derived tha...

  14. CMOS Design of Ternary Arithmetic Devices

    Institute of Scientific and Technical Information of China (English)

    吴训威; F.Prosser

    1991-01-01

    This paper presents CMOS circuit designs of a ternary adder and a ternary multiplier,formulated using transmission function theory.Binary carry signals appearing in these designs allow conventional look-ahead carry techniques to be used.compared with previous similar designs,the circuits proposed in this paper have advantages such as low dissipation,low output impedance,and simplicity of construction.

  15. CMOS-array design-automation techniques

    Science.gov (United States)

    Feller, A.; Lombardt, T.

    1979-01-01

    Thirty four page report discusses design of 4,096-bit complementary metal oxide semiconductor (CMOS) read-only memory (ROM). CMOSROM is either mask or laser programable. Report is divided into six sections; section one describes background of ROM chips; section two presents design goals for chip; section three discusses chip implementation and chip statistics; conclusions and recommendations are given in sections four thru six.

  16. CMOS Camera Array With Onboard Memory

    Science.gov (United States)

    Gat, Nahum

    2009-01-01

    A compact CMOS (complementary metal oxide semiconductor) camera system has been developed with high resolution (1.3 Megapixels), a USB (universal serial bus) 2.0 interface, and an onboard memory. Exposure times, and other operating parameters, are sent from a control PC via the USB port. Data from the camera can be received via the USB port and the interface allows for simple control and data capture through a laptop computer.

  17. Advanced CMOS Radiation Effects Testing and Analysis

    Science.gov (United States)

    Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.; Phan, A. M.; Seidleck, C. M.

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  18. CMOS imagers from phototransduction to image processing

    CERN Document Server

    Etienne-Cummings, Ralph

    2004-01-01

    The idea of writing a book on CMOS imaging has been brewing for several years. It was placed on a fast track after we agreed to organize a tutorial on CMOS sensors for the 2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004). This tutorial defined the structure of the book, but as first time authors/editors, we had a lot to learn about the logistics of putting together information from multiple sources. Needless to say, it was a long road between the tutorial and the book, and it took more than a few months to complete. We hope that you will find our journey worthwhile and the collated information useful. The laboratories of the authors are located at many universities distributed around the world. Their unifying theme, however, is the advancement of knowledge for the development of systems for CMOS imaging and image processing. We hope that this book will highlight the ideas that have been pioneered by the authors, while providing a roadmap for new practitioners in this field to exploit exc...

  19. Efficient design of CMOS TSC checkers

    Science.gov (United States)

    Biddappa, Anita; Shamanna, Manjunath K.; Maki, Gary; Whitaker, Sterling

    1990-01-01

    This paper considers the design of an efficient, robustly testable, CMOS Totally Self-Checking (TSC) Checker for k-out-of-2k codes. Most existing implementations use primitive gates and assume the single stuck-at fault model. The self-testing property has been found to fail for CMOS TSC checkers under the stuck-open fault model due to timing skews and arbitrary delays in the circuit. A new four level design using CMOS primitive gates (NAND, NOR, INVERTERS) is presented. This design retains its properties under the stuck-open fault model. Additionally, this method offers an impressive reduction (greater than 70 percent) in gate count, gate inputs, and test set size when compared to the existing method. This implementation is easily realizable and is based on Anderson's technique. A thorough comparative study has been made on the proposed implementation and Kundu's implementation and the results indicate that the proposed one is better than Kundu's in all respects for k-out-of-2k codes.

  20. A logarithmic low dark current CMOS pixel

    Science.gov (United States)

    Brunetti, Alessandro Michel; Choubey, Bhaskar

    2016-04-01

    High dynamic range pixels are required in a number of automotive and scientific applications. CMOS pixels provide different approaches to achieve this. However, these suffer from poor performance under low light conditions due to inherently high leakage current that is present in CMOS processes, also known as dark current. The typical approach to reduce this dark current involves process modifications. Nevertheless, energy considerations suggest that the leakage current will be close to zero at a close to zero voltage on the photodiode. Hence, the reduction in dark current can be achieved by forcing a zero voltage across the photodiode. In this paper, a novel logarithmic CMOS pixel design capable of reducing dark current without any process modifications is proposed. This pixel is also able to produce a wide dynamic range response. This circuit utilizes two current mirrors to force the in-pixel photodiode at a close to zero voltage. Additionally, a bias voltage is used to reduce a higher order effect known as Drain Induced Barrier Lowering (DIBL). In fact, the contribution of this effect can be compensated by increasing the body effect. In this paper, we studied the consequences of a negative bias voltage applied to the body of the current mirror pair to compensate for the DIBL effect thereby achieving a very small voltage drop on the photodiode and consequently, a higher sensitivity in low light conditions.

  1. Small-area and compact CMOS emulator circuit for CMOS/nanoscale memristor co-design.

    Science.gov (United States)

    Shin, Sanghak; Choi, Jun-Myung; Cho, Seongik; Min, Kyeong-Sik

    2013-11-01

    In this paper, a CMOS emulator circuit that can reproduce nanoscale memristive behavior is proposed. The proposed emulator circuit can mimic the pinched hysteresis loops of nanoscale memristor memory's current-voltage relationship without using any resistor array, complicated circuit blocks, etc. that may occupy very large layout area. Instead of using a resistor array, other complicated circuit blocks, etc., the proposed emulator circuit can describe the nanoscale memristor's current-voltage relationship using a simple voltage-controlled resistor, where its resistance can be programmed by the stored voltage at the state variable capacitor. Comparing the layout area between the previous emulator circuit and the proposed one, the layout area of the proposed emulator circuit is estimated to be 32 times smaller than the previous emulator circuit. The proposed CMOS emulator circuit of nanoscale memristor memory will be very useful in developing hybrid circuits of CMOS/nanoscale memristor memory.

  2. Advanced Microgravity Compatible, Integrated Laundry System Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The Advanced Microgravity Compatible, Integrated Laundry (AMCIL) is a microgravity compatible liquid / liquid vapor, two-phase laundry system with water jet...

  3. A Study of Steady Magnetospheric Convection Using High Latitude Magnetometers

    Science.gov (United States)

    de Silva, J. T.; Erickson, K. N.; Engebretson, M. J.; Murr, D. L.; Hughes, W. J.

    2001-05-01

    Magnetometer data from the MACCS and CANOPUS arrays in northern North America have been analyzed during two of the intervals of steady magnetospheric convection identified by the GEM community, January 29-30 and February 3-4, 1998. These intervals were characterized by extended periods of southward interplanetary magnetic field (negative IMF Bz), and by the absence of substorms. The patterns of ionospheric current flow on the dayside were found to be in general agreement with the disturbance current system, SD, originally described by Silsbee and Vestine [1942]. This indicates that during extended periods of southward IMF the convection on the dayside is the same whether or not there are substorms. When plasma flow patterns measured by the SuperDARN auroral radar network were available for comparison, these patterns agreed with the patterns inferred from magnetometers. Further study will investigate convection patterns on the nightside, and a similar study of convection for the southern high latitude region will be conducted using data from Antarctic stations.

  4. A radiation hardened digital fluxgate magnetometer for space applications

    Directory of Open Access Journals (Sweden)

    D. M. Miles

    2013-02-01

    Full Text Available Space-based measurements of the Earth's magnetic field are required to understand the plasma processes responsible for energizing particles in the Van Allen radiation belts and influencing space weather. This paper describes a prototype fluxgate magnetometer instrument developed for the proposed Canadian Space Agency (CSA Outer Radiation Belt Injection, Transport, Acceleration and Loss Satellite (ORBITALS mission and which has applications in other space and suborbital applications. The magnetometer is designed to survive and operate in the harsh environment of the Earth's radiation belts and measure low-frequency magnetic waves, the magnetic signatures of current systems, and the static background magnetic field. The new instrument offers improved science data compared to its predecessors through two key design changes: direct digitisation of the sensor and digital feedback combined with analog temperature compensation. These provide an increase in measurement bandwidth up to 450 Hz with the potential to extend to at least 1500 Hz. The instrument can resolve 8 pT on a 65 000 nT field with a magnetic noise of less than 10 pT per square–root Hz at 1 Hz. The prototype instrument was successfully tested and calibrated at the Natural Resources Canada Geomagnetics Laboratory showing that the mostly-digital design matches or exceeds its radiation-soft analog predecessor in sensitivity, noise, frequency range, and RMS accuracy.

  5. DC SQUID RF magnetometer with 200 MHz bandwidth

    Science.gov (United States)

    Talanov, Vladimir; Lettsome, Nesco; Orozco, Antonio; Cawthorne, Alfred; Borzenets, Valery

    2012-02-01

    Because of periodic flux-to-voltage transfer function, Superconducting QUantum Interference Device (SQUID) magnetometers operate in a closed-loop regime [1], which linearizes the response, and increases the dynamic range and sensitivity. However, a transmission line delay between the SQUID and electronics fundamentally limits the closed-loop bandwidth at 20 MHz [1], although the intrinsic bandwidth of SQUIDs is in gigahertz range. We designed a DC SQUID based RF magnetometer capable of wideband sensing coherent magnetic fields up to 200 MHz. To overcome the closed-loop bandwidth limitation, we utilized a low-frequency flux-modulated closed-loop to simultaneously lock the quasi-static magnetic flux and provide AC bias for the RF flux. The SQUID RF voltage is processed by RF electronics based on a double lock-in technique. This yields a signal proportional to the amplitude and phase of the RF magnetic flux, with more than four decades of a linear response. For YBaCuO SQUID on bi-crystal SrTiO substrate at 77 K we achieved a flux noise density of 4 μφ0/Hz at 190 MHz, which is similar to that measured at kHz frequencies with conventional flux-locked loop. [1] D. Drung, et al., Supercond. Sci. Technol. 19, S235 (2006).

  6. Multi-flux-transformer MRI detection with an atomic magnetometer.

    Science.gov (United States)

    Savukov, Igor; Karaulanov, Todor

    2014-12-01

    Recently, anatomical ultra-low field (ULF) MRI has been demonstrated with an atomic magnetometer (AM). A flux-transformer (FT) has been used for decoupling MRI fields and gradients to avoid their negative effects on AM performance. The field of view (FOV) was limited because of the need to compromise between the size of the FT input coil and MRI sensitivity per voxel. Multi-channel acquisition is a well-known solution to increase FOV without significantly reducing sensitivity. In this paper, we demonstrate twofold FOV increase with the use of three FT input coils. We also show that it is possible to use a single atomic magnetometer and single acquisition channel to acquire three independent MRI signals by applying a frequency-encoding gradient along the direction of the detection array span. The approach can be generalized to more channels and can be critical for imaging applications of non-cryogenic ULF MRI where FOV needs to be large, including head, hand, spine, and whole-body imaging. Copyright © 2014 Elsevier Inc. All rights reserved.

  7. High-resolution fully vectorial scanning Kerr magnetometer.

    Science.gov (United States)

    Flajšman, Lukáš; Urbánek, Michal; Křižáková, Viola; Vaňatka, Marek; Turčan, Igor; Šikola, Tomáš

    2016-05-01

    We report on the development of a high-resolution scanning magnetometer, which fully exploits the vectorial nature of the magneto-optical Kerr effect. The three-dimensional nature of magnetization is at the basis of many micromagnetic phenomena and from these data, we can fully characterize magnetization processes of nanostructures in static and dynamic regimes. Our scanning Kerr magnetometer uses a high numerical aperture microscope objective where the incident light beam can be deterministically deviated from the objective symmetry axis, therefore, both in-plane (via the longitudinal Kerr effect) and out-of-plane (via the polar Kerr effect) components of the magnetization vector may be detected. These components are then separated by exploiting the symmetries of the polar and longitudinal Kerr effects. From four consecutive measurements, we are able to directly obtain the three orthogonal components of the magnetization vector with a resolution of 600 nm. Performance of the apparatus is demonstrated by a measurement of 3D magnetization vector maps showing out-of-plane domains and in-plane domain walls in an yttrium-iron-garnet film and on a study of magnetization reversal in a 4-μm-wide magnetic disk.

  8. Lunar electrical conductivity, permeability and temperature from Apollo magnetometer experiments

    Science.gov (United States)

    Dyal, P.; Parkin, C. W.; Daily, W. D.

    1977-01-01

    Magnetometers were deployed at four Apollo sites on the moon to measure remanent and induced lunar magnetic fields. Measurements from this network of instruments were used to calculate the electrical conductivity, temperature, magnetic permeability, and iron abundance of the lunar interior. The measured lunar remanent fields range from 3 gammas minimum at the Apollo 15 site to 327 gammas maximum at the Apollo 16 site. Simultaneous magnetic field and solar plasma pressure measurements show that the remanent fields at the Apollo 12 and 16 sites interact with, and are compressed by, the solar wind. Remanent fields at Apollo 12 and Apollo 16 are increased 16 gammas and 32 gammas, respectively, by a solar plasma bulk pressure increase of 1.5 X 10 to the -7th power dynes/sq cm. Global lunar fields due to eddy currents, induced in the lunar interior by magnetic transients, were analyzed to calculate an electrical conductivity profile for the moon. From nightside magnetometer data in the solar wind it was found that deeper than 170 km into the moon the conductivity rises from .0003 mhos/m to .10 mhos/m at 100 km depth. Recent analysis of data obtained in the geomagnetic tail, in regions free of complicating plasma effects, yields results consistent with nightside values.

  9. Amplitude modulated Lorentz force MEMS magnetometer with picotesla sensitivity

    Science.gov (United States)

    Kumar, Varun; Ramezany, Alireza; Mahdavi, Mohammad; Pourkamali, Siavash

    2016-10-01

    This paper demonstrates ultra-high sensitivities for a Lorentz force resonant MEMS magnetometer enabled by internal-thermal piezoresistive vibration amplification. A detailed model of the magneto-thermo-electro-mechanical internal amplification is described and is in good agreement with the experimental results. Internal amplification factors up to ~1620 times have been demonstrated by artificially boosting the effective quality factor of the resonator from 680 to 1.14  ×  106 by tuning the bias current. The increase in the resonator bias current in addition to the improvement in the quality factor of the device led to a sensitivity enhancement by ~2400 times. For a bias current of 7.245 mA, where the effective quality factor of the device and consequently the sensitivity is maximum (2.107 mV nT-1), the noise floor is measured to be as low as 2.8 pT (√Hz)-1. This is by far the most sensitive Lorentz force MEMS magnetometer demonstrated to date.

  10. Optical design of microlens array for CMOS image sensors

    Science.gov (United States)

    Zhang, Rongzhu; Lai, Liping

    2016-10-01

    The optical crosstalk between the pixel units can influence the image quality of CMOS image sensor. In the meantime, the duty ratio of CMOS is low because of its pixel structure. These two factors cause the low detection sensitivity of CMOS. In order to reduce the optical crosstalk and improve the fill factor of CMOS image sensor, a microlens array has been designed and integrated with CMOS. The initial parameters of the microlens array have been calculated according to the structure of a CMOS. Then the parameters have been optimized by using ZEMAX and the microlens arrays with different substrate thicknesses have been compared. The results show that in order to obtain the best imaging quality, when the effect of optical crosstalk for CMOS is the minimum, the best distance between microlens array and CMOS is about 19.3 μm. When incident light successively passes through microlens array and the distance, obtaining the minimum facula is around 0.347 um in the active area. In addition, when the incident angle of the light is 0o 22o, the microlens array has obvious inhibitory effect on the optical crosstalk. And the anti-crosstalk distance between microlens array and CMOS is 0 μm 162 μm.

  11. Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

    CERN Document Server

    Wang, T.

    2017-01-01

    The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

  12. Development of autonomous magnetometer rotorcraft for wide area assessment

    Energy Technology Data Exchange (ETDEWEB)

    Roelof Versteeg; Matt Anderson; Les Beard; Eric Corban; Darryl Curley; Jeff Gamey; Ross Johnson; Dwight Junkin; Mark McKay; Jared Salzmann; Mikhail Tchernychev; Suraj Unnikrishnan; Scott Vinson

    2010-04-01

    Large areas across the United States are potentially contaminated with UXO, with some ranges encompassing tens to hundreds of thousands of acres. Technologies are needed which will allow for cost effective wide area scanning with 1) near 100 % coverage and 2) near 100 % detection of subsurface ordnance or features indicative of subsurface ordnance. The current approach to wide area assessment is a multi-level one, in which medium - altitude fixed wing optical imaging is used for an initial site assessment. This assessment is followed with low altitude manned helicopter based magnetometry. Subsequent to this wide area assessment targeted surface investigations are performed using either towed geophysical sensor arrays or man portable sensors. In order to be an effective tool for small UXO detection, the sensing altitude for magnetic site investigations needs to be on the order of 1 – 3 meters. These altitude requirements mean that manned helicopter surveys will generally only be feasible in large, open and relatively flat terrains. While such surveys are effective in mapping large areas relatively fast there are substantial mobilization/demobilization, staffing and equipment costs associated with these surveys (resulting in costs of approximately $100-$150/acre). In addition, due to the low altitude there are substantial risks to pilots and equipment. Surface towed arrays provide high resolution maps but have other limitations, e.g. in their ability to navigate rough terrain effectively. There is thus a need for other systems which can be used for effective data collection. An UAV (Unmanned Aerial Vehicle) magnetometer platform is an obvious alternative. The motivation behind such a system is that it reduces risk to operators, is lower in initial and Operational and Maintenance (O&M) costs (and can thus potentially be applied to smaller sites) and has the potential of being more effective in terms of detection and possibly characterization (through the use of

  13. A 3 He-129 Xe co-magnetometer with 87 Rb magnetometry

    Science.gov (United States)

    Limes, Mark; Sheng, Dong; Romalis, Mike

    2016-05-01

    We report progress on a 3 He-129 Xe co-magnetometer detected with a 87 Rb magnetometer. The noble-gas co-magnetometer is insensitive to any long-term bias field drifts, but the presence of hot Rb can cause instability in the ratio of 3 He-129 Xe precession frequencies. We use a sequence of Rb π pulses to suppress the instability due to Rb-noble gas interactions by a factor of 104 along all three spatial axes. For detection, our 87 Rb magnetometer operates using single-axis 87 Rb π pulses with σ+ /σ- pumping-this technique decouples the 87 Rb magnetometer from bias fields, and allows for SERF operation. We are presently investigating systematic effects due to combinations of several imperfections, such as longitudinal noble gas polarization, imperfect 87 Rb π pulses, and 87 Rb pump light shifts. Thus far, our 87 Rb magnetometer has a sensitivity of 40 fT/√{Hz}, and our 3 He-129 Xe co-magnetometer has achieved a single-shot precession frequency ratio error of 20 nHz and a long-term bias drift of 8 nHz at 7 h. We are developing the co-magnetometer for use as an NMR gyro, and to search for possible spin-gravity interactions. Supported by DARPA and NSF.

  14. Electromagnetic Imaging with Atomic Magnetometers: A Novel Approach to Security and Surveillance

    CERN Document Server

    Hussain, Sarah; Deans, Cameron; Renzoni, Ferruccio

    2016-01-01

    We describe our research programme on the use of atomic magnetometers to detect conductive objects via electromagnetic induction. The extreme sensitivity of atomic magnetometers at low frequencies, up to seven orders of magnitude higher than a coil-based system, permits deep penetration through different media and barriers, and in various operative environments. This eliminates the limitations usually associated with electromagnetic detection.

  15. Phantom study quantifying the depth performance of a handheld magnetometer for sentinel lymph node biopsy

    NARCIS (Netherlands)

    Pouw, Joost J.; Bastiaan, Daniel M.C.; Klaase, Joost M.; Haken, ten Bennie

    2016-01-01

    Purpose The use of a magnetic nanoparticle tracer and handheld magnetometer for sentinel lymph node biopsy (SLNB) was recently introduced to overcome drawbacks associated with the use of radioisotope tracers. Unlike the gamma probe, the used magnetometers are not only sensitive to the tracer, but a

  16. SQUID-magnetometer with open-ended horizontal room-temperature access

    NARCIS (Netherlands)

    Brake, ter H.J.M.; Ulfman, J.A.; Flokstra, J.

    1984-01-01

    A new, SQUID-based magnetometer has been developed for measurements of remanent and induced magnetisation. The advantage of this system compared to conventional SQUID-magnetometers is its horizontal access to the sensing coils. The access at room temperature is open at both ends. Main benefits of th

  17. Closed-cycle gas flow system for cooling of high Tc d.c. SQUID magnetometers

    NARCIS (Netherlands)

    Bosch, van den P.J.; Holland, H.J.; Brake, ter H.J.M.; Rogalla, H.

    1995-01-01

    A high Tc.d.c SQUID based magnetometer for magnetocardiography is currently under development at the University of Twente. Since such a magnetometer should be simple to use, the cooling of the system can be realized most practically by means of a cryocooler. A closed-cycle gas flow cooling system in

  18. SiCOH-based resistive random access memory for backend of line compatible nonvolatile memory application

    Science.gov (United States)

    Zheng, Liang; Dai, Ya-Wei; Yu, Lin-Jie; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-04-01

    We investigated the resistive switching characteristics of a SiCOH low-k-material-based resistive random access memory (RRAM) in this study. This SiCOH-based RRAM is fully compatible with backend CMOS technology, which is extremely important for its applicability. The device demonstrated here had higher performance characteristics than a conventional SiO2-based RRAM, such as a higher ON/OFF ratio (around 102), and a higher cycling endurance in an ambient environment. Taken together, these characteristics make the device a promising candidate for next-generation nonvolatile applications.

  19. Spatial compatibility and affordance compatibility in patients with chronic schizophrenia.

    Science.gov (United States)

    Kume, Yu; Sato, Fumiyasu; Hiraoka, Yuya; Suzuki, Shingo; Niyama, Yoshitsugu

    2016-12-01

    A deterioration in information-processing performance is commonly recognized in patients with chronic schizophrenia. Although the enhancement of cognitive skills in patients with schizophrenia is important, the types of external stimuli that influence performance have not received much attention. The aim of present study was to clarify the effects of spatial and affordance compatibility in patients with schizophrenia, compared with those in healthy people. The subjects (25 patients with schizophrenia and 25 healthy controls) participated in two experiment examining the effects of the spatial location of stimuli and the action-relevance of objects. The results showed that the effect of spatial compatibility was similar in both the patients and the controls, whereas the influence of action-relevant objects was not highlighted in either patients with chronic schizophrenia or healthy controls. These findings provide important evidence of a normal spatial compatibility effect in patients with chronic schizophrenia. However, further research examining the affordance compatibility effect is needed, taking into consideration the symptomatology and the severity of the social functioning level in patients with schizophrenia. Copyright © 2016 Elsevier B.V. All rights reserved.

  20. Correlation between fluxgate and SQUID magnetometer data sets for geomagnetic storms

    Directory of Open Access Journals (Sweden)

    Matladi Thabang

    2014-01-01

    Full Text Available There has always been a need to monitor the near Earth's magnetic field, as this monitoring provides understanding and possible predictions of Space Weather events such as geomagnetic storms. Conventional magnetometers such as fluxgates have been used for decades for Space Weather research. The use of highly sensitive magnetometers such as Superconducting QUantum Interference Devices (SQUIDs, promise to give more insight into Space Weather. SQUIDs are relatively recent types of magnetometers that exploit the superconductive effects of flux quantization and Josephson tunneling to measure magnetic flux. SQUIDs have a very broad bandwidth compared to most conventional magnetometers and can measure magnetic flux as low as a few femtotesla. Since SQUIDs have never been used in Space Weather research, unshielded, it is necessary to investigate if they can be reliable Space Weather instruments. The validation is performed by comparing the frequency content of the SQUID and fluxgate magnetometers, as reported by Phiri.

  1. Swarm Absolute Scalar Magnetometers first in-orbit results

    Science.gov (United States)

    Fratter, Isabelle; Léger, Jean-Michel; Bertrand, François; Jager, Thomas; Hulot, Gauthier; Brocco, Laura; Vigneron, Pierre

    2016-04-01

    The ESA Swarm mission will provide the best ever survey of the Earth's magnetic field and its temporal evolution. This will be achieved by a constellation of three identical satellites, launched together on the 22nd of November 2013. In order to observe the magnetic field thoroughly, each satellite carries two magnetometers: a Vector Field Magnetometer (VFM) coupled with a star tracker camera, to measure the direction of the magnetic field in space, and an Absolute Scalar Magnetometer (ASM), to measure its intensity. The ASM is the French contribution to the Swarm mission. This new generation instrument was designed by CEA-Leti and developed in close partnership with CNES, with scientific support from IPGP. Its operating principle is based on the atomic spectroscopy of the helium 4 metastable state. It makes use of the Zeeman's effect to transduce the magnetic field into a frequency, the signal being amplified by optical pumping. The primary role of the ASM is to provide absolute measurements of the magnetic field's strength at 1 Hz, for the in-flight calibration of the VFM. As the Swarm magnetic reference, the ASM scalar performance is crucial for the mission's success. Thanks to its innovative design, the ASM offers the best precision, resolution and absolute accuracy ever attained in space, with similar performance all along the orbit. In addition, thanks to an original architecture, the ASM implements on an experimental basis a capacity for providing simultaneously vector measurements at 1 Hz. This new feature makes it the first instrument capable of delivering both scalar and vector measurements simultaneously at the same point. Swarm offers a unique opportunity to validate the ASM vector data in orbit by comparison with the VFM's. Furthermore, the ASM can provide scalar data at a much higher sampling rate, when run in "burst" mode at 250 Hz, with a 100 Hz measurement bandwidth. An analysis of the spectral content of the magnetic field above 1 Hz becomes thus

  2. Electromagnetic compatibility in power electronics

    CERN Document Server

    Costa , François; Revol , Bertrand

    2014-01-01

    Scientists largely attribute the recent deterioration of the electromagnetic environment to power electronics. This realization has spurred the study of methodical approaches to electromagnetic compatibility designs as explored in this text. The book addresses major challenges, such as handling numerous parameters vital to predicting electro magnetic effects and achieving compliance with line-harmonics norms, while proposing potential solutions.

  3. Atuarfitsialak: Greenland's Cultural Compatible Reform

    Science.gov (United States)

    Wyatt, Tasha R.

    2012-01-01

    In 2002, Greenlandic reform leaders launched a comprehensive, nation-wide reform to create culturally compatible education. Greenland's reform work spans the entire educational system and includes preschool through higher education. To assist their efforts, reform leaders adopted the Standards for Effective Pedagogy developed at the Center for…

  4. Compatibility optimization of passenger cars

    NARCIS (Netherlands)

    Nastic, T.; Schoofs, A.J.G.; Mooi, H.G.

    1999-01-01

    Nowadays traffic safety and occupant protection get a lot of attention due to the large number of fatalities and injuries in car accidents. The occupant protection in two-vehicle crashes can be improved by car-to-car compatibility, which means well balanced crashworthiness characteristics of both

  5. Design optimization for car compatibility

    NARCIS (Netherlands)

    Nastic, T.; Schoofs, A.J.G.; Mooi, H.G.

    1999-01-01

    Nowadays traffic safety and occupant protection get a lot of attention due to the large number of fatalities and injuries in car accidents. The occupant protection in two-vehicle crashes can be improved by car-to-car compatibility, which means well balanced crashworthiness characteristics of both

  6. Scaling and Pixel Crosstalk Considerations for CMOS Image Sensor

    Institute of Scientific and Technical Information of China (English)

    JIN Xiang-liang; CHEN Jie(member,IEEE); QIU Yu-lin

    2003-01-01

    With the scaling development of the minimum lithographic size,the scaling trend of CMOS imager pixel size and fill factor has been computed according to the Moore rule.When the CMOS minimum lithographic feature scales down to 0.35 μm,the CCD image pixel size is not so easy to be reduced and but the CMOS image pixel size benefits from the scaling minimum lithographic feature. However, when the CMOS technology is downscaled to or under 0.35 μm,the fabrication of CMOS image sensors will be limited by the standard CMOS process in both ways of shallow trench isolation and source/drain junction,which results in pixel crosstalk.The impact of the crosstalk on the active pixel CMOS image sensor is analyzed based on the technology scaling.Some suppressed crosstalk methods have been reviewed.The best way is that combining the advantages of CMOS and SOI technology to fabricate the image sensors will reduce the pixel crosstalk.

  7. BioCMOS Interfaces and Co-Design

    CERN Document Server

    Carrara, Sandro

    2013-01-01

    The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

  8. Lab-on-CMOS integration of microfluidics and electrochemical sensors.

    Science.gov (United States)

    Huang, Yue; Mason, Andrew J

    2013-10-07

    This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms.

  9. Charge-Transfer CMOS Image Sensors: Device and Radiation Aspects

    NARCIS (Netherlands)

    Ramachandra Rao, P.

    2009-01-01

    The aim of this thesis was twofold: investigating the effect of ionizing radiation on 4-T CMOS image sensors and the possibility of realizing a CCD like sensor in standard 0.18-μm CMOS technology (for medical applications). Both the aims are complementary; borrowing and lending many aspects of radia

  10. From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

    DEFF Research Database (Denmark)

    Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.;

    2008-01-01

    This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process...

  11. Construction and Operation of a Differential Hall Element Magnetometer

    Science.gov (United States)

    Calkins, Matthew W.; Javernick, Philip D.; Quintero, Pedro A.; Calm, Yitzi M.; Meisel, Mark W.

    2012-02-01

    A Differential Hall Element Magnetometer (DHEM) was constructed to measure the magnetic saturation and coercive fields of small samples consisting of magnetic nanoparticles that may have biomedical applications. The device consists of two matched Hall elements that can be moved through the room temperature bore of a 9 Tesla superconducting magnet. The Hall elements are wired in opposition such that a null response, to within a small offset, is measured in the absence of a sample that may be located on top of one unit. A LabVIEW program controls the current through the Hall elements and measures the net Hall voltage while simultaneously moving the probe through the magnetic field by regulating a linear stepper motor. Ultimately, the system will be tested to obtain a figure of merit using successively smaller samples. Details of the apparatus will be provided along with preliminary data.

  12. Eddy current imaging with an atomic radio-frequency magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Wickenbrock, Arne, E-mail: wickenbr@uni-mainz.de [Johannes Gutenberg-Universität Mainz, 55128 Mainz (Germany); Leefer, Nathan; Blanchard, John W. [Helmholtz Institut Mainz, 55099 Mainz (Germany); Budker, Dmitry [Johannes Gutenberg-Universität Mainz, 55128 Mainz (Germany); Helmholtz Institut Mainz, 55099 Mainz (Germany); Department of Physics, University of California, Berkeley, California 94720-7300 (United States); Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2016-05-02

    We use a radio-frequency {sup 85}Rb alkali-vapor cell magnetometer based on a paraffin-coated cell with long spin-coherence time and a small, low-inductance driving coil to create highly resolved conductivity maps of different objects. We resolve sub-mm features in conductive objects, we characterize the frequency response of our technique, and by operating at frequencies up to 250 kHz we are able to discriminate between differently conductive materials based on the induced response. The method is suited to cover a wide range of driving frequencies and can potentially be used for detecting non-metallic objects with low DC conductivity.

  13. Modified electrical transport probe design for standard magnetometer

    CERN Document Server

    Assaf, Badih A; Wei, Peng; Katmis, Ferhat; Moodera, Jagadeesh S; Heiman, Don

    2012-01-01

    Making electrical transport measurements on a material is often a time consuming process that involves testing a large number of samples. It is thus inconvenient to wire up and rewire samples on to a sample probe. We therefore present a method of modifying Quantum Design's MPMS SQUID magnetometer transport probe that simplifies the process of sample mounting. One of the difficulties to overcome is the small diameter of the sample space. A small socket is designed and mounted on the probe so that various samples mounted on individual headers can be readily exchanged in the socket. We also present some test results on the topological insulator Bi2Te2Se using the modified probe.

  14. Magnetoencephalography using a Multilayer hightc DC SQUID Magnetometer

    Science.gov (United States)

    Faley, M. I.; Poppe, U.; Borkowski, R. E. Dunin; Schiek, M.; Boers, F.; Chocholacs, H.; Dammers, J.; Eich, E.; Shah, N. J.; Ermakov, A. B.; Slobodchikov, V. Yu.; Maslennikov, Yu. V.; Koshelets, V. P.

    We describe tests of the use of a multilayer highTc DC SQUID magnetometer for magnetoencephalography (MEG) and compare our measurements with results obtained using a lowTc SQUID sensor. The integration of bias reversal readout electronics for highTc DC SQUID magnetometry into a commercial MEG data acquisition system is demonstrated. Results of measurements performed on a salinefilled head phantom are shown and the detection of an auditory evoked magnetic response of the human cortex elicited by a stimulus is illustrated. Future modifications of highTc DC SQUID sensors for applications in MEG, in order to reach a resolution of 1 fT/√Hz at 77.5 K over a wide frequency band, are outlined.

  15. Magnetometer-Augmented IMU Simulator: In-Depth Elaboration

    Directory of Open Access Journals (Sweden)

    Thomas Brunner

    2015-03-01

    Full Text Available The location of objects is a growing research topic due, for instance, to the expansion of civil drones or intelligent vehicles. This expansion was made possible through the development of microelectromechanical systems (MEMS, inexpensive and miniaturized inertial sensors. In this context, this article describes the development of a new simulator which generates sensor measurements, giving a specific input trajectory. This will allow the comparison of pose estimation algorithms. To develop this simulator, the measurement equations of every type of sensor have to be analytically determined. To achieve this objective, classical kinematic equations are used for the more common sensors, i.e., accelerometers and rate gyroscopes. As nowadays, the MEMS inertial measurement units (IMUs are generally magnetometer-augmented, an absolute world magnetic model is implemented. After the determination of the perfect measurement (through the error-free sensor models, realistic error models are developed to simulate real IMU behavior. Finally, the developed simulator is subjected to different validation tests.

  16. Highly stable atomic vector magnetometer based on free spin precession.

    Science.gov (United States)

    Afach, S; Ban, G; Bison, G; Bodek, K; Chowdhuri, Z; Grujić, Z D; Hayen, L; Hélaine, V; Kasprzak, M; Kirch, K; Knowles, P; Koch, H-C; Komposch, S; Kozela, A; Krempel, J; Lauss, B; Lefort, T; Lemière, Y; Mtchedlishvili, A; Naviliat-Cuncic, O; Piegsa, F M; Prashanth, P N; Quéméner, G; Rawlik, M; Ries, D; Roccia, S; Rozpedzik, D; Schmidt-Wellenburg, P; Severjins, N; Weis, A; Wursten, E; Wyszynski, G; Zejma, J; Zsigmond, G

    2015-08-24

    We present a magnetometer based on optically pumped Cs atoms that measures the magnitude and direction of a 1 μT magnetic field. Multiple circularly polarized laser beams were used to probe the free spin precession of the Cs atoms. The design was optimized for long-time stability and achieves a scalar resolution better than 300 fT for integration times ranging from 80 ms to 1000 s. The best scalar resolution of less than 80 fT was reached with integration times of 1.6 to 6 s. We were able to measure the magnetic field direction with a resolution better than 10 μrad for integration times from 10 s up to 2000 s.

  17. Magnetometer-augmented IMU simulator: in-depth elaboration.

    Science.gov (United States)

    Brunner, Thomas; Lauffenburger, Jean-Philippe; Changey, Sébastien; Basset, Michel

    2015-03-04

    The location of objects is a growing research topic due, for instance, to the expansion of civil drones or intelligent vehicles. This expansion was made possible through the development of microelectromechanical systems (MEMS), inexpensive and miniaturized inertial sensors. In this context, this article describes the development of a new simulator which generates sensor measurements, giving a specific input trajectory. This will allow the comparison of pose estimation algorithms. To develop this simulator, the measurement equations of every type of sensor have to be analytically determined. To achieve this objective, classical kinematic equations are used for the more common sensors, i.e., accelerometers and rate gyroscopes. As nowadays, the MEMS inertial measurement units (IMUs) are generally magnetometer-augmented, an absolute world magnetic model is implemented. After the determination of the perfect measurement (through the error-free sensor models), realistic error models are developed to simulate real IMU behavior. Finally, the developed simulator is subjected to different validation tests.

  18. Simultaneously improving the sensitivity and absolute accuracy of CPT magnetometer.

    Science.gov (United States)

    Liang, Shang-Qing; Yang, Guo-Qing; Xu, Yun-Fei; Lin, Qiang; Liu, Zhi-Heng; Chen, Zheng-Xiang

    2014-03-24

    A new method to improve the sensitivity and absolute accuracy simultaneously for coherent population trapping (CPT) magnetometer based on the differential detection method is presented. Two modulated optical beams with orthogonal circular polarizations are applied, in one of which two magnetic resonances are excited simultaneously by modulating a 3.4GHz microwave with Larmor frequency. When a microwave frequency shift is introduced, the difference in the power transmitted through the cell in each beam shows a low noise resonance. The sensitivity of 2pT/Hz @ 10Hz is achieved. Meanwhile, the absolute accuracy of ± 0.5nT within the magnetic field ranging from 20000nT to 100000nT is realized.

  19. A three-axis SQUID-based absolute vector magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Schönau, T.; Schmelz, M.; Stolz, R.; Anders, S.; Linzen, S.; Meyer, H.-G. [Department of Quantum Detection, Leibniz Institute of Photonic Technology, Jena 07745 (Germany); Zakosarenko, V.; Meyer, M. [Supracon AG, An der Lehmgrube 11, Jena 07751 (Germany)

    2015-10-15

    We report on the development of a three-axis absolute vector magnetometer suited for mobile operation in the Earth’s magnetic field. It is based on low critical temperature dc superconducting quantum interference devices (LTS dc SQUIDs) with sub-micrometer sized cross-type Josephson junctions and exhibits a white noise level of about 10 fT/Hz{sup 1/2}. The width of superconducting strip lines is restricted to less than 6 μm in order to avoid flux trapping during cool-down in magnetically unshielded environment. The long-term stability of the flux-to-voltage transfer coefficients of the SQUID electronics is investigated in detail and a method is presented to significantly increase their reproducibility. We further demonstrate the long-term operation of the setup in a magnetic field varying by about 200 μT amplitude without the need for recalibration.

  20. A three-axis SQUID-based absolute vector magnetometer.

    Science.gov (United States)

    Schönau, T; Zakosarenko, V; Schmelz, M; Stolz, R; Anders, S; Linzen, S; Meyer, M; Meyer, H-G

    2015-10-01

    We report on the development of a three-axis absolute vector magnetometer suited for mobile operation in the Earth's magnetic field. It is based on low critical temperature dc superconducting quantum interference devices (LTS dc SQUIDs) with sub-micrometer sized cross-type Josephson junctions and exhibits a white noise level of about 10 fT/Hz(1/2). The width of superconducting strip lines is restricted to less than 6 μm in order to avoid flux trapping during cool-down in magnetically unshielded environment. The long-term stability of the flux-to-voltage transfer coefficients of the SQUID electronics is investigated in detail and a method is presented to significantly increase their reproducibility. We further demonstrate the long-term operation of the setup in a magnetic field varying by about 200 μT amplitude without the need for recalibration.

  1. Observations of interplanetary dust by the Juno magnetometer investigation

    DEFF Research Database (Denmark)

    Benn, Mathias; Jørgensen, John Leif; Denver, Troelz

    2017-01-01

    One of the Juno magnetometer investigation's star cameras was configured to search for unidentified objects during Juno's transit en route to Jupiter. This camera detects and registers luminous objects to magnitude 8. Objects persisting in more than five consecutive images and moving...... with an apparent angular rate of between 2 and 18,000 arcsec/s were recorded. Among the objects detected were a small group of objects tracked briefly in close proximity to the spacecraft. The trajectory of these objects demonstrates that they originated on the Juno spacecraft, evidently excavated...... by micrometeoroid impacts on the solar arrays. The majority of detections occurred just prior to and shortly after Juno's transit of the asteroid belt. This rather novel detection technique utilizes the Juno spacecraft's prodigious 60 m2 of solar array as a dust detector and provides valuable information...

  2. Associating ground magnetometer observations with current or voltage generators

    DEFF Research Database (Denmark)

    Hartinger, M. D.; Xu, Z.; Clauer, C. R.

    2017-01-01

    A circuit analogy for magnetosphere-ionosphere current systems has two extremes for driversof ionospheric currents: ionospheric elec tric fields/voltages constant while current/conductivity vary—the“voltage generator”—and current constant while electric field/conductivity vary—the “current generator.......”Statistical studies of ground magnetometer observations associated with dayside Transient High LatitudeCurrent Systems (THLCS) driven by similar mechanisms find contradictory results using this paradigm:some studies associate THLCS with voltage generators, others with current generators. We argue that mostof...... these two assumptions substantially alter expectations for magnetic perturbations associatedwith either a current or a voltage generator. Our results demonstrate that before interpreting groundmagnetometer observations of THLCS in the context of current/voltage generators, the location...

  3. Miniaturized digital fluxgate magnetometer for small spacecraft applications

    Science.gov (United States)

    Forslund, Åke; Belyayev, Serhiy; Ivchenko, Nickolay; Olsson, Göran; Edberg, Terry; Marusenkov, Andriy

    2008-01-01

    A novel design of an Earth field digital fluxgate magnetometer is presented, the small magnetometer in low-mass experiment (SMILE). The combination of a number of new techniques results in significant miniaturization of both sensor and electronics. The design uses a sensor with volume compensation, combining three dual rod cores in a Macor® cube with the side dimension of 20 mm. Use of volume compensation provides high geometrical stability of the axes and improved performance compared to component compensated sensors. The sensor is operated at an excitation frequency of 8 kHz. Most of the instrument functionality is combined in a digital signal processing core, implemented in a field programmable gate array (FPGA). The pick-up signal is digitized after amplification and filtering, and values of compensation currents for each of the axes are determined by a digital correlation algorithm, equivalent to a matched filter, and are fed to a hybrid pulse-width modulation/delta-sigma digital-to-analogue converter driving the currents through the compensation coils. Using digital design makes the instrument very flexible, reduces power consumption and opens possibilities for the customization of the operation modes. The current implementation of the design is based on commercial off-the-shelf components. A calibration of the SMILE instrument was carried out at the Nurmijärvi Geophysical Observatory, showing high linearity (within 6 nT on the whole ±50 µT scale), good orthogonality (22 arcmin) and very good temperature stability of the axes.

  4. First Results of the Juno Magnetometer Investigation in Jupiter's Magnetosphere

    Science.gov (United States)

    Connerney, Jack; Oliversen, Ronald; Espley, Jared; Kotsiaros, Stavros; Joergensen, John; Joergensen, Peter; Merano, Jose; Denver, Troelz; Benn, Mathias; Bloxham, Jeremy; Bolton, Scott; Levin, Steve

    2017-04-01

    The Juno spacecraft entered polar orbit about Jupiter on July 4, 2016, after a Jupiter Orbit Insertion (JOI) main engine burn lasting 35 minutes. Juno's science instruments were not powered during the critical maneuver sequence ( 5 days) but were fully operational shortly afterward. The 53.5-day capture orbit provides Juno's science instruments with the opportunity to sample the Jovian environment close up (to 1.06 Jovian radii, Rj) and in polar orbit extending to the outer reaches of the Jovian magnetosphere. Jupiter's gravity and magnetic fields will be globally mapped with unprecedented accuracy as Juno conducts a study of Jupiter's interior structure and composition, as well as the first comprehensive exploration of the polar magnetosphere. The magnetic field investigation onboard Juno is equipped with two magnetometer sensor suites, located at 10 and 12 m from the spacecraft body at the end of one of the three solar panel wings. Each contains a vector fluxgate magnetometer (FGM) sensor and a pair of co-located non-magnetic star tracker camera heads which provide accurate attitude determination for the FGM sensors. The first few periapsis passes available to date revealed an extraordinary spatial variation of the magnetic field close to the planet's surface, suggesting that Juno may be sampling the field closer to the dynamo region than widely anticipated, i.e., portending a dynamo surface extending to relatively large radial distance ( 0.9Rj?). We present the first observations of Jupiter's magnetic field obtained in close proximity to the planet, and speculate on what wonders await as more longitudes are drawn across the global map (32 polar orbits separated by designed to acquire.

  5. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2003-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0...

  6. A CMOS current-mode operational amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1993-01-01

    A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...... current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2...

  7. CMOS Current-mode Operational Amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1992-01-01

    A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...... current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2...

  8. CMOS biomicrosystems where electronics meets biology

    CERN Document Server

    2011-01-01

    "The book will address the-state-of-the-art in integrated Bio-Microsystems that integrate microelectronics with fluidics, photonics, and mechanics. New exciting opportunities in emerging applications that will take system performance beyond offered by traditional CMOS based circuits are discussed in detail. The book is a must for anyone serious about microelectronics integration possibilities for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with electronics background that want to learn about integrated microsystems. The book will be also used as a recommended reading and supplementary material in graduate course curriculum"--

  9. Analysis of bipolar and CMOS amplifiers

    CERN Document Server

    Sodagar, Amir M

    2007-01-01

    The classical approach to analog circuit analysis is a daunting prospect to many students, requiring tedious enumeration of contributing factors and lengthy calculations. Most textbooks apply this cumbersome approach to small-signal amplifiers, which becomes even more difficult as the number of components increases. Analysis of Bipolar and CMOS Amplifiers offers students an alternative that enables quick and intuitive analysis and design: the analysis-by-inspection method.This practical and student-friendly text demonstrates how to achieve approximate results that fall within an acceptable ran

  10. Vertical Isolation for Photodiodes in CMOS Imagers

    Science.gov (United States)

    Pain, Bedabrata

    2008-01-01

    In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

  11. An Approach for Low Power CMOS Design

    Directory of Open Access Journals (Sweden)

    Ravindra kumar chejara

    2015-03-01

    Full Text Available Power dissipation has emerged an important parameter in design of Low Power CMOS circuits. For this level converter and dual supply voltage assignments are used to reduce the power dissipation and propagation delay. In this paper, variable supply-voltage scheme (dual-VS scheme for dual power supplies along with voltage level converter is presented. Also paper presents an overall comparative analysis among various methods to achieve voltage level shifter even in lower technology comparative to higher ones and help user to select the best methods for same at this technology.

  12. Nano-CMOS gate dielectric engineering

    CERN Document Server

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  13. RF Circuit Design in Nanometer CMOS

    OpenAIRE

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern multi-band communication systems as these systems move toward software-defined radio. These trends in technology and system design call for a re-thinking of analog and RF circuit design in nanometer C...

  14. Method and circuitry for CMOS transconductor linearization

    OpenAIRE

    Kundur Subramaniyan, Harish; Klumperink, Eric; Srinivasan, Venkatesh; Kiaei, Ali; Nauta, Bram

    2016-01-01

    Third order distortion is reduced in a CMOS transconductor circuit that includes a first N-channel transistor and a first P-channel transistor, gates of the first N-channel transistor and the first P-channel transistor being coupled to receive an input signal. Drains of the first N-channel transistor and first P-channel transistor are coupled to an output conductor. A first degeneration resistor is coupled between a source of the first P-channel transistor and a first supply voltage and a sec...

  15. Silicon Light Emitting Devices in CMOS Technology

    Institute of Scientific and Technical Information of China (English)

    CHEN Hong-Da; LIU Hai-Jun; LIU Jin-Bin; GU Ming; HUANG Bei-Ju

    2007-01-01

    @@ Two silicon light emitting devices with different structures are realized in standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6nW and 12.1 nW are measured at 10 V and 100 mA, respectively, and both the calculated light emission intensities are more than 1 mW/cm2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.

  16. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  17. Variation-aware advanced CMOS devices and SRAM

    CERN Document Server

    Shin, Changhwan

    2016-01-01

    This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

  18. Design of high speed camera based on CMOS technology

    Science.gov (United States)

    Park, Sei-Hun; An, Jun-Sick; Oh, Tae-Seok; Kim, Il-Hwan

    2007-12-01

    The capacity of a high speed camera in taking high speed images has been evaluated using CMOS image sensors. There are 2 types of image sensors, namely, CCD and CMOS sensors. CMOS sensor consumes less power than CCD sensor and can take images more rapidly. High speed camera with built-in CMOS sensor is widely used in vehicle crash tests and airbag controls, golf training aids, and in bullet direction measurement in the military. The High Speed Camera System made in this study has the following components: CMOS image sensor that can take about 500 frames per second at a resolution of 1280*1024; FPGA and DDR2 memory that control the image sensor and save images; Camera Link Module that transmits saved data to PC; and RS-422 communication function that enables control of the camera from a PC.

  19. Theoretical performance analysis for CMOS based high resolution detectors.

    Science.gov (United States)

    Jain, Amit; Bednarek, Daniel R; Rudin, Stephen

    2013-03-06

    High resolution imaging capabilities are essential for accurately guiding successful endovascular interventional procedures. Present x-ray imaging detectors are not always adequate due to their inherent limitations. The newly-developed high-resolution micro-angiographic fluoroscope (MAF-CCD) detector has demonstrated excellent clinical image quality; however, further improvement in performance and physical design may be possible using CMOS sensors. We have thus calculated the theoretical performance of two proposed CMOS detectors which may be used as a successor to the MAF. The proposed detectors have a 300 μm thick HL-type CsI phosphor, a 50 μm-pixel CMOS sensor with and without a variable gain light image intensifier (LII), and are designated MAF-CMOS-LII and MAF-CMOS, respectively. For the performance evaluation, linear cascade modeling was used. The detector imaging chains were divided into individual stages characterized by one of the basic processes (quantum gain, binomial selection, stochastic and deterministic blurring, additive noise). Ranges of readout noise and exposure were used to calculate the detectors' MTF and DQE. The MAF-CMOS showed slightly better MTF than the MAF-CMOS-LII, but the MAF-CMOS-LII showed far better DQE, especially for lower exposures. The proposed detectors can have improved MTF and DQE compared with the present high resolution MAF detector. The performance of the MAF-CMOS is excellent for the angiography exposure range; however it is limited at fluoroscopic levels due to additive instrumentation noise. The MAF-CMOS-LII, having the advantage of the variable LII gain, can overcome the noise limitation and hence may perform exceptionally for the full range of required exposures; however, it is more complex and hence more expensive.

  20. High-temperature compatible 3D-integration processes for a vacuum-sealed CNT-based NEMS

    Science.gov (United States)

    Gueye, R.; Lee, S. W.; Akiyama, T.; Briand, D.; Roman, C.; Hierold, C.; de Rooij, N. F.

    2013-03-01

    A System-in-Package (SiP) concept for the 3D-integration of a Single Wall Carbon Nanotube (SWCNT) resonator with its CMOS driving electronics is presented. The key element of this advanced SiP is the monolithic 3D-integration of the MEMS with the CMOS electronics using Through Silicon Vias (TSVs) on an SOI wafer. This SiP includes: A glass cap vacuum-sealed to the main wafer using an eutectic bonding process: a low leak rate of 2.7 10-9 mbar•l/s was obtained; Platinum-TSVs, compatible with the SWCNT growth and release process; The TSVs were developed in a "via first" process and characterized at high-temperature — up to 850 °C. An ohmic contact between the Pt-metallization and the SOI silicon device layer was obtained; The driving CMOS electronic device is assembled to the MEMS using an Au stud bump technology. Keywords: System-in-Package (SiP), vacuum packaging, eutectic bonding, "via-first" TSVs, high-temperature platinum interconnects, ohmic contacts, Au-stud bumps assembly, CMOS electronics.