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Sample records for cigs solar cell

  1. Degradation of CIGS solar cells

    NARCIS (Netherlands)

    Theelen, M.J.

    2015-01-01

    Thin film CIGS solar cells and individual layers within these solar cells have been tested in order to assess their long term stability. Alongside with the execution of standard tests, in which elevated temperatures and humidity levels are used, the solar cells have also been exposed to a

  2. Degradation of CIGS solar cells

    NARCIS (Netherlands)

    Theelen, M.J.

    2015-01-01

    Large scale commercial introduction of CIGS photovoltaics (PV) requires modules with low costs, high efficiencies and long and predictable lifetimes. Unfortunately,knowledge about the lifetime of CIGS PV is limited, which is reflected in the results of field studies: degradation rates varying from

  3. Numerical modelling of CIGS/CdS solar cell

    Science.gov (United States)

    Devi, Nisha; Aziz, Anver; Datta, Shouvik

    2018-05-01

    In this work, we design and analyze the Cu(In,Ga)Se2 (CIGS) solar cell using simulation software "Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D)". The conventional CIGS solar cell uses various layers, like intrinsic ZnO/Aluminium doped ZnO as transparent oxide, antireflection layer MgF2, and electron back reflection (EBR) layer at CIGS/Mo interface for good power conversion efficiency. We replace this conventional model by a simple model which is easy to fabricate and also reduces the cost of this cell because of use of lesser materials. The new designed model of CIGS solar cell is ITO/CIGS/OVC/CdS/Metal contact, where OVC is ordered vacancy compound. From this simple structure, even at very low illumination we are getting good results. We simulate this CIGS solar cell model by varying various physical parameters of CIGS like thickness, carrier density, band gap and temperature.

  4. TEMPERATUREEFFECT OFELECTRICALPROPERTIES OF CIGS SOLAR CELL

    Directory of Open Access Journals (Sweden)

    A. M. Ferouani

    2015-07-01

    Full Text Available In this paper we are interested in studying the copper–indium–gallium–selenium (CIGS solar cells sandwiched between cadmium sulfide (CdS and ZnO as buffer layers, and Molybdenum (Mo. Thus, we report our simulation results using the capacitance simulator (SCAPS in terms of layer thickness, absorber layer band gap and operating temperature to find out the optimum choice. An efficiency of 20.61% (with Voc of 635.2mV, Jsc of 44.08 mA/cm2 and fill factor of 0.73 has been achieved with CdS used as buffer layer as the reference case. It is also found that the high efficiency CIGS cells with the low temperature were a very high efficiency conversion.

  5. Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

    NARCIS (Netherlands)

    Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

  6. Se interlayer in CIGS absorption layer for solar cell devices

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Kyu; Sim, Jae-Kwan [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of); Kissinger, N.J. Suthan [Department of General Studies, Physics Group, Jubail University College, Royal Commission for Jubail, Jubail 10074 (Saudi Arabia); Song, Il-Seok; Kim, Jin-Soo; Baek, Byung-Joon [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of); Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of)

    2015-06-05

    Highlights: • Se interlayer is deposited between the CuGa and CuIn/In/Mo/STS stacked layer. • Both CIG precursor layers were selenized at 500 °C for 1 h. • SIMS depth profile shows that Ga distribution is uniform by Se interlayer. • The efficiency was improved for the CIGS solar cell by Se interlayer. - Abstract: A CIGS absorber layer with high gallium contents in the space-charge region can reduce the carrier recombination and improve the open circuit voltage V{sub oc}. Therefore, controlling Ga grading on top of CIGS thin film solar cells is the main objective of this experiment. To reduce Selenium (Se) vacancy, it is important that the diffusion of Ga elements into Se vacancy between Mo back contact and CIGS absorption layer would be controlled. In order to reduce Se vacancy and confirm Ga inter-diffusion, two CIGS solar cells were fabricated by converting CIG precursor with and without Se interlayer. The copper-indium metallic precursors were fabricated corresponding to the sequence CuIn/In/Mo/STS on stainless steel (STS) substrates by sequential direct current magnetron sputtering while Se layer was evaporated by rapid thermal annealing (RTA) system to obtain a Se/CuIn/In/Mo/STS stack. CuGa precursor layer was also fabricated on the Se/CuIn/In/Mo/STS stack. Finally, both CuGa/Se/CuIn/In/Mo/STS and CuGa/CuIn/In/Mo/STS stacks were selenized at 500 °C for 1 h. It was clearly observed from the secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) that there was a change between the fabricated CIGS absorption layers and the amount of Ga elements. Furthermore, the Ga elements gradually decreased from the top to the bottom layer of the CIGS absorption layer. We also discussed the effect of Se interlayer in the CIGS absorption layer and its influence on the solar cell’s performance.

  7. Se interlayer in CIGS absorption layer for solar cell devices

    International Nuclear Information System (INIS)

    Lee, Seung-Kyu; Sim, Jae-Kwan; Kissinger, N.J. Suthan; Song, Il-Seok; Kim, Jin-Soo; Baek, Byung-Joon; Lee, Cheul-Ro

    2015-01-01

    Highlights: • Se interlayer is deposited between the CuGa and CuIn/In/Mo/STS stacked layer. • Both CIG precursor layers were selenized at 500 °C for 1 h. • SIMS depth profile shows that Ga distribution is uniform by Se interlayer. • The efficiency was improved for the CIGS solar cell by Se interlayer. - Abstract: A CIGS absorber layer with high gallium contents in the space-charge region can reduce the carrier recombination and improve the open circuit voltage V oc . Therefore, controlling Ga grading on top of CIGS thin film solar cells is the main objective of this experiment. To reduce Selenium (Se) vacancy, it is important that the diffusion of Ga elements into Se vacancy between Mo back contact and CIGS absorption layer would be controlled. In order to reduce Se vacancy and confirm Ga inter-diffusion, two CIGS solar cells were fabricated by converting CIG precursor with and without Se interlayer. The copper-indium metallic precursors were fabricated corresponding to the sequence CuIn/In/Mo/STS on stainless steel (STS) substrates by sequential direct current magnetron sputtering while Se layer was evaporated by rapid thermal annealing (RTA) system to obtain a Se/CuIn/In/Mo/STS stack. CuGa precursor layer was also fabricated on the Se/CuIn/In/Mo/STS stack. Finally, both CuGa/Se/CuIn/In/Mo/STS and CuGa/CuIn/In/Mo/STS stacks were selenized at 500 °C for 1 h. It was clearly observed from the secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) that there was a change between the fabricated CIGS absorption layers and the amount of Ga elements. Furthermore, the Ga elements gradually decreased from the top to the bottom layer of the CIGS absorption layer. We also discussed the effect of Se interlayer in the CIGS absorption layer and its influence on the solar cell’s performance

  8. Surface Passivation of CIGS Solar Cells Using Gallium Oxide

    KAUST Repository

    Garud, Siddhartha

    2018-02-27

    This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

  9. Development of CIGS2 solar cells with lower absorber thickness

    Energy Technology Data Exchange (ETDEWEB)

    Vasekar, Parag S.; Dhere, Neelkanth G. [Florida Solar Energy Center, University of Central Florida, 1679 Clearlake Rd., Cocoa, FL 32922 (United States); Moutinho, Helio [National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401 (United States)

    2009-09-15

    The availability and cost of materials, especially of indium can be a limiting factor as chalcopyrite based thin-film solar cells advance in their commercialization. The required amounts of metals can be lowered by using thinner films. When the thickness of the film decreases, there is possibility of remaining only in the small grain region because the coalescence of grains does not have an opportunity to enhance the grain size to the maximum. Solar cell performance in smaller grain chalcopyrite absorber deteriorates due to larger fraction of grain boundaries. Efforts are being made to reduce the thickness while maintaining the comparable performance. This work presents a study of preparation, morphology and other material properties of CIGS2 absorber layers with decreasing thicknesses up to 1.2 {mu}m and its correlation with the device performance. Encouraging results were obtained demonstrating that reasonable solar cell efficiencies (>10%) can be achieved even for thinner CIGS2 thin-film solar cells. (author)

  10. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.; Christoforo, M. Greyson; Mailoa, Jonathan P.; Bowring, Andrea R.; Unger, Eva L.; Nguyen, William H.; Burschka, Julian; Pellet, Norman; Lee, Jungwoo Z.; Grä tzel, Michael; Noufi, Rommel; Buonassisi, Tonio; Salleo, Alberto; McGehee, Michael D.

    2015-01-01

    solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS

  11. Modeling and simulation of a dual-junction CIGS solar cell using Silvaco ATLAS

    OpenAIRE

    Fotis, Konstantinos

    2012-01-01

    Approved for public release; distribution is unlimited. The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell, using a CIGS bottom cell and different thin-film designs as a top cell, was conducted in order to increase the current record efficiency of 20.3% for a single CIGS cell. This was accomplished through modeling and simulation using Silvaco ATLASTM, an ad...

  12. Development of CIGS2 thin film solar cells

    International Nuclear Information System (INIS)

    Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

    2005-01-01

    Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

  13. All-Nonvacuum-Processed CIGS Solar Cells Using Scalable Ag NWs/AZO-Based Transparent Electrodes.

    Science.gov (United States)

    Wang, Mingqing; Choy, Kwang-Leong

    2016-07-06

    With record cell efficiency of 21.7%, CIGS solar cells have demonstrated to be a very promising photovoltaic (PV) technology. However, their market penetration has been limited due to the inherent high cost of the cells. In this work, to lower the cost of CIGS solar cells, all nonvacuum-processed CIGS solar cells were designed and developed. CIGS absorber was prepared by the annealing of electrodeposited metallic layers in a chalcogen atmosphere. Nonvacuum-deposited Ag nanowires (NWs)/AZO transparent electrodes (TEs) with good transmittance (92.0% at 550 nm) and high conductivity (sheet resistance of 20 Ω/□) were used to replace the vacuum-sputtered window layer. Additional thermal treatment after device preparation was conducted at 220 °C for a few of minutes to improve both the value and the uniformity of the efficiency of CIGS pixel cell on 5 × 5 cm substrate. The best performance of the all-nonvacuum-fabricated CIGS solar cells showed an efficiency of 14.05% with Jsc of 34.82 mA/cm(2), Voc of 0.58 V, and FF of 69.60%, respectively, which is comparable with the efficiency of 14.45% of a reference cell using a sputtered window layer.

  14. Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

    Directory of Open Access Journals (Sweden)

    Md. Billal Hosen

    2017-10-01

    Full Text Available This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.

  15. Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

    NARCIS (Netherlands)

    Lu, J.; Liu, W.; van der Werf, C.H.M.; Kovalgin, A.Y.; Sun, Y.; Schropp, R.E.I.; Schmitz, J.

    2010-01-01

    Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal

  16. CIGS thin film solar cell prepared by reactive co-sputtering

    Science.gov (United States)

    Kim, Jeha; Lee, Ho-Sub; Park, Nae-Man

    2013-09-01

    The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.

  17. An optimized efficient dual junction InGaN/CIGS solar cell: A numerical simulation

    Science.gov (United States)

    Farhadi, Bita; Naseri, Mosayeb

    2016-08-01

    The photovoltaic performance of an efficient double junction InGaN/CIGS solar cell including a CdS antireflector top cover layer is studied using Silvaco ATLAS software. In this study, to gain a desired structure, the different design parameters, including the CIGS various band gaps, the doping concentration and the thickness of CdS layer are optimized. The simulation indicates that under current matching condition, an optimum efficiency of 40.42% is achieved.

  18. High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

    Science.gov (United States)

    Rajanikant, Ray Jayminkumar

    The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a

  19. Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Sharma

    2014-01-01

    Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

  20. Parameters optimization of CIGS solar cell using 2D physical modeling

    Directory of Open Access Journals (Sweden)

    Samar Dabbabi

    Full Text Available In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 µm ZnO:Al, 0.06 µm i-ZnO, 0.04 µm CdS and 3 µm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018 cm−3. The optimized CIGS solar cell characteristics were a current density of short circuit Jsc = 38.75 mA/cm2, an open-circuit voltage V0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency η = 23.20%. This result is in good agreement with experimental efficiencies found in literature. Keywords: CIGS solar cell, Electrical characteristics, Silvaco-Atlas software

  1. Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

    Energy Technology Data Exchange (ETDEWEB)

    Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

    2017-08-01

    Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

  2. Investigation of Some Transparent Metal Oxides as Damp Heat Protective Coating for CIGS Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Pern, F. J.; Yan, F.; Zaaunbrecher, B.; To, B.; Perkins, J.; Noufi, R.

    2012-10-01

    We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85oC and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5-um Al-doped ZnO (AZO) layer and 0.2-um bilayer InZnO were used as 'inherent' part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-um ZnSnO and atomic layer deposited (ALD) 0.1-um Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative -- all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micro-morphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

  3. Improving Efficiency of Multicrystalline Silicon and CIGS Solar Cells by Incorporating Metal Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ming-Jer Jeng

    2015-10-01

    Full Text Available This work studies the use of gold (Au and silver (Ag nanoparticles in multicrystalline silicon (mc-Si and copper-indium-gallium-diselenide (CIGS solar cells. Au and Ag nanoparticles are deposited by spin-coating method, which is a simple and low cost process. The random distribution of nanoparticles by spin coating broadens the resonance wavelength of the transmittance. This broadening favors solar cell applications. Metal shadowing competes with light scattering in a manner that varies with nanoparticle concentration. Experimental results reveal that the mc-Si solar cells that incorporate Au nanoparticles outperform those with Ag nanoparticles. The incorporation of suitable concentration of Au and Ag nanoparticles into mc-Si solar cells increases their efficiency enhancement by 5.6% and 4.8%, respectively. Incorporating Au and Ag nanoparticles into CIGS solar cells improve their efficiency enhancement by 1.2% and 1.4%, respectively. The enhancement of the photocurrent in mc-Si solar cells is lower than that in CIGS solar cells, owing to their different light scattering behaviors and material absorption coefficients.

  4. Thin film CIGS solar cells with a novel low cost process - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, A. N.; Romanyuk, Y.

    2010-01-15

    Novel manufacturing routes for efficient and low-cost Cu(In,Ga)Se{sub 2} (called CIGS) thin film solar cells are explored and patented. CIGS has proven its suitability for highly efficient and extremely stable solar cells. The low-cost methods allow impurity free material synthesis, fast large-area deposition, high material utilization and a very short energy payback time with drastically lower manufacturing costs. Two non-vacuum, solution-based approaches are investigated to deposit thin layers of CIGS. The first approach considers incorporation of copper into indium gallium selenide precursor layers by ion-exchange from aqueous or organic solutions. Organic solutions provide faster copper incorporation and do not corrode the metal back contact. Solar cells processed from selenized precursor films exhibit efficiencies of up to 4.1%. The second approach with paste coating of inorganic salt solution results in a solar cell efficiency of 4% (record 6.7%), where further improvements are hindered by the presence of the residual carbon layer. Using alternative organic binders, pre-deposited selenium layers, non-binder recipes helps to avoid the carbon layer although the obtained layers are inhomogeneous and contain impurity phases. A patent for the ion-exchange approach is pending, and the obtained research results on the paste coating approach will be scrutinized during new European FP7 project 'NOVA-CIGS'. (authors)

  5. Identifying parasitic current pathways in CIGS solar cells by modelling dark J-V response

    NARCIS (Netherlands)

    Williams, B.L.; Smit, S.; Kniknie, B.J.; Bakker, K.J.; Keuning, W.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2015-01-01

    An equivalent circuit model, which allows for the presence of three types of shunting pathways, has been developed to describe the dark J-V characteristics in CIGS solar cells. Excellent agreement between the model and experimental data was apparent throughout a temperature range of 183-323K.

  6. Parameters optimization of CIGS solar cell using 2D physical modeling

    Science.gov (United States)

    Dabbabi, Samar; Nasr, Tarek Ben; Kamoun-Turki, Najoua

    In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 μm ZnO:Al, 0.06 μm i-ZnO, 0.04 μm CdS and 3 μm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018 cm-3. The optimized CIGS solar cell characteristics were a current density of short circuit Jsc = 38.75 mA/cm2, an open-circuit voltage V0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency η = 23.20%. This result is in good agreement with experimental efficiencies found in literature.

  7. Recycling of high purity selenium from CIGS solar cell waste materials

    Energy Technology Data Exchange (ETDEWEB)

    Gustafsson, Anna M.K., E-mail: anna.gustafsson@chalmers.se; Foreman, Mark R.StJ.; Ekberg, Christian

    2014-10-15

    Highlights: • A new method for recycling of selenium from CIGS solar cell materials is presented. • Separation of selenium as selenium dioxide after heating in oxygen atmosphere. • Complete selenium separation after oxidation of <63 μm particles at 800 °C for 1 h. • After reduction of selenium dioxide the selenium purity was higher than 99.999 wt%. - Abstract: Copper indium gallium diselenide (CIGS) is a promising material in thin film solar cell production. To make CIGS solar cells more competitive, both economically and environmentally, in comparison to other energy sources, methods for recycling are needed. In addition to the generally high price of the material, significant amounts of the metals are lost in the manufacturing process. The feasibility of recycling selenium from CIGS through oxidation at elevated temperatures was therefore examined. During oxidation gaseous selenium dioxide was formed and could be separated from the other elements, which remained in solid state. Upon cooling, the selenium dioxide sublimes and can be collected as crystals. After oxidation for 1 h at 800 °C all of the selenium was separated from the CIGS material. Two different reduction methods for reduction of the selenium dioxide to selenium were tested. In the first reduction method an organic molecule was used as the reducing agent in a Riley reaction. In the second reduction method sulphur dioxide gas was used. Both methods resulted in high purity selenium. This proves that the studied selenium separation method could be the first step in a recycling process aimed at the complete separation and recovery of high purity elements from CIGS.

  8. Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process

    Directory of Open Access Journals (Sweden)

    Grace Rajan

    2018-01-01

    Full Text Available In view of the large-scale utilization of Cu(In,GaSe2 (CIGS solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.

  9. Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

    Directory of Open Access Journals (Sweden)

    Gułkowski Sławomir

    2017-01-01

    Full Text Available Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

  10. Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

    Science.gov (United States)

    Gułkowski, Sławomir; Krawczak, Ewelina

    2017-10-01

    Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

  11. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells

    Energy Technology Data Exchange (ETDEWEB)

    Brun, Nadja Rebecca [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Wehrli, Bernhard [Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Fent, Karl, E-mail: karl.fent@fhnw.ch [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland)

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L{sup −1} molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L{sup −1}. From OPV, copper (14 μg L{sup −1}), zinc (87 μg L{sup −1}) and silver (78 μg L{sup −1}) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. - Highlights: • Photovoltaics may be disposed in the environment after usage. • Copper indium gallium selenide (CIGS) and organic (OPV) cells were compared. • Morphological and molecular effects were assessed in zebrafish embryos. • Environmental condition affected metal leaching and ecotoxicological activity. • Damaged CIGS cells pose higher risk to the environment than OPV cells.

  12. Sputtered molybdenum thin films and the application in CIGS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, D.; Zhu, H., E-mail: hongbing1982@hotmail.com; Liang, X.; Zhang, C.; Li, Z.; Xu, Y.; Chen, J.; Zhang, L.; Mai, Y., E-mail: yaohuamai@hbu.edu.cn

    2016-01-30

    Graphical abstract: - Highlights: • Mo thin films are prepared by magnetron sputtering. • The dynamic deposition rate increases with the increasing discharge power. • The surface structure of Mo films varies with discharge power and working pressure. • High efficiency CIGS thin film solar cell of 15.2% has been obtained. - Abstract: Molybdenum (Mo) thin films are prepared by magnetron sputtering with different discharge powers and working pressures for the application in Cu(In, Ga)Se{sub 2} (CIGS) thin film solar cells as back electrodes. Properties of these Mo thin films are systematically investigated. It is found that the dynamic deposition rate increases with the increasing discharge power while decreases with the increasing working pressure. The highest dynamic deposition rate of 15.1 nm m/min is achieved for the Mo thin film deposited at the discharge power of 1200 W and at the working pressure of 0.15 Pa. The achieved lowest resistivity of 3.7 × 10{sup −5} Ω cm is attributed to the large grains in the compact thin film. The discharge power and working pressure have great influence on the sputtered Mo thin films. High efficiency of 12.5% was achieved for the Cu(In, Ga)Se{sub 2} (CIGS) thin film solar cells with Mo electrodes prepared at 1200 W and low working pressures. By further optimizing material and device properties, the conversion efficiency has reached to 15.2%.

  13. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells.

    Science.gov (United States)

    Brun, Nadja Rebecca; Wehrli, Bernhard; Fent, Karl

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L(-1) molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L(-1). From OPV, copper (14 μg L(-1)), zinc (87 μg L(-1)) and silver (78 μg L(-1)) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. Copyright © 2015 Elsevier B.V. All rights reserved.

  14. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.

    2015-01-01

    © 2015 The Royal Society of Chemistry. A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. This work paves the way for integrating perovskites into a low-cost and high-efficiency (>25%) tandem cell.

  15. Optical Metrology for CIGS Solar Cell Manufacturing and its Cost Implications

    Science.gov (United States)

    Sunkoju, Sravan Kumar

    Solar energy is a promising source of renewable energy which can meet the demand for clean energy in near future with advances in research in the field of photovoltaics and cost reduction by commercialization. Availability of a non-contact, in-line, real time robust process control strategies can greatly aid in reducing the gap between cell and module efficiencies, thereby leading to cost-effective large-scale manufacturing of high efficiency CIGS solar cells. In order to achieve proper process monitoring and control for the deposition of the functional layers of CuIn1-xGaxSe 2 (CIGS) based thin film solar cell, optical techniques such as spectroscopic reflectometry and polarimetry are advantageous because they can be set up in an unobtrusive manner in the manufacturing line, and collect data in-line and in-situ. The use of these techniques requires accurate optical models that correctly represent the properties of the layers being deposited. In this study, Spectroscopic ellipsometry (SE) has been applied for the characterization of each individual stage of CIGS layers deposited using the 3-stage co-evaporation process along with the other functional layers. Dielectric functions have been determined for the energy range from 0.7 eV to 5.1 eV. Critical-point line-shape analysis was used in this study to determine the critical point energies of the CIGS based layers. To control the compositional and thickness uniformity of all the functional layers during the fabrication of CIGS solar cells over large areas, multilayer photovoltaics (PV) stack optical models were developed with the help of extracted dielectric functions. In this study, mapping capability of RC2 spectroscopic ellipsometer was used to map all the functional layer thicknesses of a CIGS solar cell in order to probe the spatial non-uniformities that can affect the performance of a cell. The optical functions for each of the stages of CIGS 3-stage deposition process along with buffer layer and transparent

  16. Comparative study of the role of Ga in CIGS solar cells with different thickness

    Energy Technology Data Exchange (ETDEWEB)

    Han, Anjun, E-mail: haj211@mail.sim.ac.cn [Institute of Photo Electronics Thin Film Devices and Technique of Nankai University, Tianjin 300071 (China); Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), 235 Chengbei Road, Jiading, Shanghai 201800 (China); Sun, Yun; Zhang, Yi [Institute of Photo Electronics Thin Film Devices and Technique of Nankai University, Tianjin 300071 (China); Liu, Xiaohui; Meng, Fanying; Liu, Zhengxin [Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), 235 Chengbei Road, Jiading, Shanghai 201800 (China)

    2016-01-01

    Cu(In, Ga)Se{sub 2} (CIGS) thin films with thickness of 1 μm and 2 μm are prepared by co-evaporation process, and the different Ga/(Ga + In) are achieved by varying the temperature of Ga source. The morphology, structure, minimum band gap, and performance of solar cells are comparatively studied. As Ga/(Ga + In) increases, little changes can be observed in the crystal quality of 1 μm CIGS films, while the grain size of 2 μm films decreases significantly. (112) diffraction peak intensities of the 1 μm and 2 μm films decrease and increase, respectively. In the case of the same Ga/(Ga + In), the minimum band gap values of 1 μm films are larger than that of 2 μm films, and the difference becomes large with Ga/(Ga + In) increasing. The minimum band gap values of 1 μm films are more sensitive to variation of the Ga/(Ga + In). As Ga/(Ga + In) increases, a more improvement of the efficiency of solar cells with thickness of 1 μm is obtained due to the large enhancement of the open-circuit voltage, and the efficiency reaches the maximum value when Ga/(Ga + In) is about 0.37. - Highlights: • The role of Ga in CIGS solar cells with different thickness is comparatively studied. • Effect of Ga on the material properties of 1 μm and 2 μm films is totally different. • The minimum band gap of thinned films is more sensitive to variation of Ga/(Ga + In). • Efficiency of thinned solar cells increases more significantly with Ga increasing.

  17. The exposure of CIGS solar cells to different electrical biases in a damp-heat illumination environment

    NARCIS (Netherlands)

    Theelen, M.; Steijvers, H.; Bakker, K.; Vink, J.; Mortazavi, S.; Mulder, A.; Barreau, N.; Roosen, D.; Haverkamp, E.

    2016-01-01

    Two hybrid degradation setups, allowing exposure of solar cells and modules to elevated temperatures and humidity as well as illumination have been built. CIGS solar cells were placed in the degradation setups, allowing real time monitoring of their electrical properties. Under open circuit

  18. The effect of damp heat-illumination exposure on CIGS solar cells: A combined XRD and electrical characterization study

    NARCIS (Netherlands)

    Theelen, M.; Hendrikx, R.; Barreau, N.; Steijvers, H.; Böttger, A.

    2016-01-01

    Unencapsulated CIGS solar cells were simultaneously exposed to damp heat and illumination. In-situ monitoring of their electrical parameters demonstrated a rapid decrease of the efficiency, mainly driven by changes in the series and shunt resistances. The non-degraded and degraded solar cells were

  19. CIGS thin films, solar cells, and submodules fabricated using a rf-plasma cracked Se-radical beam source

    International Nuclear Information System (INIS)

    Ishizuka, Shogo; Yamada, Akimasa; Shibata, Hajime; Fons, Paul; Niki, Shigeru

    2011-01-01

    Coevaporated Cu(In,Ga)Se 2 (CIGS) film growth using a rf-plasma cracked Se-radical beam (R-Se) source leads to a significant reduction in the amount of raw Se source material wasted during growth and exhibits unique film properties such as highly dense, smooth surfaces and large grain size. R-Se grown CIGS solar cells also show concomitant unique properties different from conventional evaporative Se (E-Se) source grown CIGS cells. In the present work, the impact of modified surfaces, interfaces, and bulk crystal properties of R-Se grown CIGS films on the solar cell performance was studied. When a R-Se source was used, Na diffusion into CIGS layers was enhanced while a remarkable diffusion of elemental Ga and Se into Mo back contact layers was observed. Improvements in the bulk crystal quality as manifested by large grain size and increased Na concentration with the use of a R-Se source is expected to be effective to improve photovoltaic performance. Using a R-Se source for the growth of CIGS absorber layers at a relatively low growth temperature, we have successfully demonstrated a monolithically integrated submodule efficiency of 15.0% (17 cells, aperture area of 76.5 cm 2 ) on 0.25-mm thick soda-lime glass substrates.

  20. Enhancement of the CIGS solar cell's efficiency by anti-reflection coating with teflon AF

    Energy Technology Data Exchange (ETDEWEB)

    Bae, Hong-Sub; Kim, Chan; Rhee, Il-Su [Kyungpook National University, Daegu (Korea, Republic of); Jo, Hyun-Jun; Kim, Dae-Hwan [Daegu Gyeongbuk Institute of Science and Technology, Daegu (Korea, Republic of); Hong, Sung-Wook [Daegu University, Gyeongsan (Korea, Republic of)

    2014-11-15

    An anti-reflection (AR) layer of Teflon AF was deposited on the front surface of a Cu(In,Ga)Se{sub 2} (CIGS) solar cell with a structure of grid/TCO/ZnO/CdS/Cu(In,Ga)Se{sub 2}/Mo/glass by using the spin coating method. This AR layer reduced the front-surface reflection, which resulted in high efficiency for the CIGS solar cell. The thickness of the Teflon AF layer was varied to determine the thickness that gave the highest transmittance of incident light into the active absorber of the CIGS solar cell. The optimum thickness of the Teflon AF layer was found to be 105 nm. CIGS solar cells with a Teflon AF layer of 105 nm were constructed, and their efficiencies were compared with those of solar cells without a Teflon AF layer. The average increase in the relative efficiency of the solar cells was 2.63% due to the inclusion of an anti-reflection layer of Teflon AF.

  1. Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Vasekar, Parag S., E-mail: psvasekar@yahoo.co [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States); Jahagirdar, Anant H.; Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States)

    2010-01-31

    Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of {approx} 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 {mu}m CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 {mu}m absorber prepared under similar conditions as that of a 2.7 {mu}m thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10{sup -10} mA/cm{sup 2} to 1.78 x 10{sup -8} mA/cm{sup 2}. This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.

  2. Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

    International Nuclear Information System (INIS)

    Vasekar, Parag S.; Jahagirdar, Anant H.; Dhere, Neelkanth G.

    2010-01-01

    Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of ∼ 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 μm CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 μm absorber prepared under similar conditions as that of a 2.7 μm thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10 -10 mA/cm 2 to 1.78 x 10 -8 mA/cm 2 . This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.

  3. Thin Film CIGS Solar Cells, Photovoltaic Modules, and the Problems of Modeling

    Directory of Open Access Journals (Sweden)

    Antonino Parisi

    2013-01-01

    Full Text Available Starting from the results regarding a nonvacuum technique to fabricate CIGS thin films for solar cells by means of single-step electrodeposition, we focus on the methodological problems of modeling at cell structure and photovoltaic module levels. As a matter of fact, electrodeposition is known as a practical alternative to costly vacuum-based technologies for semiconductor processing in the photovoltaic device sector, but it can lead to quite different structural and electrical properties. For this reason, a greater effort is required to ensure that the perspectives of the electrical engineer and the material scientist are given an opportunity for a closer comparison and a common language. Derived parameters from ongoing experiments have been used for simulation with the different approaches, in order to develop a set of tools which can be used to put together modeling both at single cell structure and complete module levels.

  4. Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

    Science.gov (United States)

    Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

    2016-02-01

    The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

  5. Modeling and Simulation of a Dual-Junction CIGS Solar Cell Using Silvaco ATLAS

    Science.gov (United States)

    2012-12-01

    stage process, thermal evaporation, electrodeposition , deposition temperatures, content, stoichiometry and composition range on CIGS, inducing in...mesh. This location can be any specific region, and for the purposes of this thesis, a pair of cathode , and anode electrodes was assigned in the two...ATLASTM structure file for the dual-junction CIGS cell. In order to extract an overall I–V curve, two sets of anodes and cathodes were placed on the

  6. CIGS Thin Film Solar Cells, phase 2 Uppsala University Final report 2006-01-01 - 2007-06-14

    Energy Technology Data Exchange (ETDEWEB)

    Edoff, Marika (Thin Film Solar Cell group, Dep. Technical Sciences, Uppsala Univ., P.O. Box 534, SE-751 21 Uppsala (Sweden)) (and others)

    2007-06-15

    The project CIGS Thin Film Solar Cells, phase 2 has been going on for 18,5 months and was interrupted in advance on the 14th of June, 2007. The decision to shorten the period was taken by the board of the Swedish Energy Agency the 14th of February. It was decided to reevaluate and re-direct the financial support to the group. A new project, CIGS Thin Film Solar Cells, phase 3, superseded this project and will go on for the initially planned project period (until 2009-12-31). During the project much of the focus has been on research on Cd-free buffer layers, with an emphasis on the interface properties between the CIGS and the buffer layer. (CIGS is a commonly used acronym for Cu(In,Ga)Se{sub 2}, which is the active absorption layer in this type of solar cells) The combination of high quality CIGS and the new buffer layers has been another field of interest. CIGS solar cell module development and computer modelling of solar cells and modules has been the third major research area. The results show that the group still holds a position as one of the leaders in the world in this field. The 18.5 % efficient Cd-free solar cell, which was obtained and independently confirmed is only one percent away from the world record and in addition it is Cd-free using a Zn(O,S) buffer layer (the world record from NREL contains Cd). By alloying ZnO with MgO instead of ZnS almost equally good results can be achieved. During the last half year an 18.1 % cell has been measured with a (Zn,Mg)O buffer layer. Solar cell module technology includes several research issues, both fundamental as e.g. modelling of cell voltage and losses as a function of distance from interconnect to interconnect, but also more development as e.g. encapsulation routines. The harsh environment test (damp heat test) run at 85 deg C and 85 % relative humidity for 1000 hours was passed for both a small (12.5x12.5 cm2) and a large (27.5x30 cm2) module within the degradation limits stated by the IEC standards, using

  7. Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study

    NARCIS (Netherlands)

    Rezaei, N.; Isabella, O.; Vroon, Z.; Zeman, M.

    2018-01-01

    A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless

  8. Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer : A 3-D optical study

    NARCIS (Netherlands)

    Rezaei, N.; Isabella, O.; Vroon, Zeger; Zeman, M.

    2018-01-01

    A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless

  9. A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

    NARCIS (Netherlands)

    Xu, M.; Wachters, A.J.H.; Van Deelen, J.; Mourad, M.C.D.; Buskens, P.J.P.

    2014-01-01

    We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the

  10. Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser

    Directory of Open Access Journals (Sweden)

    Dyi-Cheng Chen

    2014-07-01

    Full Text Available This study used ANSYS simulation software for analyzing an ultraviolet (UV (355 nm laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to SiO2 layer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, andelectrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation results, the laser function time was 135 μs, the UV laser was 0.5 W, and the P2 layer thin films were removed. The experimental results indicated that the electrode pattern of the experiment was similar to that of the simulation result, and the laser process did not damage the base plate. The analysis results confirm that the laser apparatus is effective when applied to a stainless steel CIGS solar cell P2 layer.

  11. Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

    Directory of Open Access Journals (Sweden)

    Chuan Lung Chuang

    2015-01-01

    Full Text Available Indium tin oxide (ITO thin films were grown on glass substrates by direct current (DC reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were -1.6E+20 cm−3, 2.7E+01 cm2/Vs, 1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

  12. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    Science.gov (United States)

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  13. Process parameter impact on properties of sputtered large-area Mo bilayers for CIGS thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Badgujar, Amol C.; Dhage, Sanjay R., E-mail: dhage@arci.res.in; Joshi, Shrikant V.

    2015-08-31

    Copper indium gallium selenide (CIGS) has emerged as a promising candidate for thin film solar cells, with efficiencies approaching those of silicon-based solar cells. To achieve optimum performance in CIGS solar cells, uniform, conductive, stress-free, well-adherent, reflective, crystalline molybdenum (Mo) thin films with preferred orientation (110) are desirable as a back contact on large area glass substrates. The present study focuses on cylindrical rotating DC magnetron sputtered bilayer Mo thin films on 300 mm × 300 mm soda lime glass (SLG) substrates. Key sputtering variables, namely power and Ar gas flow rates, were optimized to achieve best structural, electrical and optical properties. The Mo films were comprehensively characterized and found to possess high degree of thickness uniformity over large area. Best crystallinity, reflectance and sheet resistance was obtained at high sputtering powers and low argon gas flow rates, while mechanical properties like adhesion and residual stress were found to be best at low sputtering power and high argon gas flow rate, thereby indicating a need to arrive at a suitable trade-off during processing. - Highlights: • Sputtering of bilayer molybdenum thin films on soda lime glass • Large area deposition using rotating cylindrical direct current magnetron • Trade of sputter process parameters power and pressure • High uniformity of thickness and best electrical properties obtained • Suitable mechanical and optical properties of molybdenum are achieved for CIGS application.

  14. Stability of CIGS Solar Cells and Component Materials Evaluated by a Step-Stress Accelerated Degradation Test Method: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Pern, F. J.; Noufi, R.

    2012-10-01

    A step-stress accelerated degradation testing (SSADT) method was employed for the first time to evaluate the stability of CuInGaSe2 (CIGS) solar cells and device component materials in four Al-framed test structures encapsulated with an edge sealant and three kinds of backsheet or moisture barrier film for moisture ingress control. The SSADT exposure used a 15oC and then a 15% relative humidity (RH) increment step, beginning from 40oC/40%RH (T/RH = 40/40) to 85oC/70%RH (85/70) as of the moment. The voluminous data acquired and processed as of total DH = 3956 h with 85/70 = 704 h produced the following results. The best CIGS solar cells in sample Set-1 with a moisture-permeable TPT backsheet showed essentially identical I-V degradation trend regardless of the Al-doped ZnO (AZO) layer thickness ranging from standard 0.12 μm to 0.50 μm on the cells. No clear 'stepwise' feature in the I-V parameter degradation curves corresponding to the SSADT T/RH/time profile was observed. Irregularity in I-V performance degradation pattern was observed with some cells showing early degradation at low T/RH < 55/55 and some showing large Voc, FF, and efficiency degradation due to increased series Rs (ohm-cm2) at T/RH ≥ 70/70. Results of (electrochemical) impedance spectroscopy (ECIS) analysis indicate degradation of the CIGS solar cells corresponded to increased series resistance Rs (ohm) and degraded parallel (minority carrier diffusion/recombination) resistance Rp, capacitance C, overall time constant Rp*C, and 'capacitor quality' factor (CPE-P), which were related to the cells? p-n junction properties. Heating at 85/70 appeared to benefit the CIGS solar cells as indicated by the largely recovered CPE-P factor. Device component materials, Mo on soda lime glass (Mo/SLG), bilayer ZnO (BZO), AlNi grid contact, and CdS/CIGS/Mo/SLG in test structures with TPT showed notable to significant degradation at T/RH ≥ 70/70. At T/RH = 85/70, substantial blistering of

  15. Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Pu, Nen-Wen, E-mail: nwpuccit@gmail.com [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Liang, Shih-Chang [Materials & Electro-Optics Research Division, National Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan (China)

    2015-11-01

    Highlights: • Ti-doped indium tin oxide (ITO) films were deposited by DC magnetron sputtering. • Optimal optoelectronic properties were achieved at a sputtering power of 100 W. • Resistivity = 3.2 × 10{sup −4} Ω-cm without substrate heating or post growth annealing. • Mean visible and NIR transmittances of 83 and 80%, respectively, were achieved. • Efficient batteries (11.3%) were fabricated by applying ITO:Ti to CIGS solar cells. - Abstract: In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10{sup −4} Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se{sub 2} solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm{sup 2}, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

  16. Growth and structural properties of reactively co-sputtered CIGS films and their solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeha [Cheongju University, Cheongju (Korea, Republic of); Park, Nae-Man [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

    2014-02-15

    Using reactive sputtering, we fabricated stoichiometric CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) thin films. Both Cu{sub 0.6}Ga{sub 0.4} (CuGa) and Cu{sub 0.4}In{sub 0.6} (CuIn) alloy targets were simultaneously sputtered under the delivery of elemental Se produced from a thermal cracker. By changing the sputtering rates of the CuGa and the CuIn, we were able to obtain the composition ratios of Cu/(Ga+In) and Ga/(Ga+In) in the range of 0.71-0.95 and 0.10-0.30, respectively. Both the grain size and the surface roughness of the CIGS film increased as the Cu/(Ga+In) ratio increased. In the X-ray diffraction analysis on CIGS films of 0.9 m, preferential growth with a [112] orientation was found, and reflections from the (211), (220)/(204), (301), (312)/(116), (400)/(008), and (332)/(316) planes were observed. The CIGS films showed the existence of Cu{sub 2-x}Se phases in the Cu-rich samples and ordered defect compound (ODC) phases in the Cu-poor films, as confirmed in the Raman measurements. A best device performance of η = 8.1%, V{sub oc} = 0.442 V, J{sub sc} = 34.3 mA/cm{sup 2}, and FF = 53.4% was obtained from a cell fabricated with a CIGS layer (t = 0.9 μm) with the Cu/(Ga+In) ratio = 0.71 and the Ga/(Ga+In) ratio = 0.10.

  17. A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

    Science.gov (United States)

    Xu, Man; Wachters, Arthur J H; van Deelen, Joop; Mourad, Maurice C D; Buskens, Pascal J P

    2014-03-10

    We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.

  18. CIGS Solar Cells for Space Applications: Numerical Simulation of the Effect of Traps Created by High-Energy Electron and Proton Irradiation on the Performance of Solar Cells

    Science.gov (United States)

    Dabbabi, Samar; Ben Nasr, Tarek; Turki Kamoun, Najoua

    2018-02-01

    Numerical simulation is carried out using the Silvaco ATLAS software to predict the effect of 1-MeV electron and 4-MeV proton irradiation on the performance of a Cu(In, Ga)Se2 (CIGS) solar cell that operates under the air mass zero spectrum (AM0). As a consequence of irradiation, two types of traps are induced including the donor- and acceptor-type traps. Only one of them (the donor-type trap) is found responsible for the degradation of the open-circuit voltage (V OC), fill factor (FF) and efficiency (η), while the short circuit current (J SC) remains essentially unaffected. The modelling simulation validity is verified by comparison with the experimental data. This article shows that CIGS solar cells are suited for space applications.

  19. Preparation and optimization of a molybdenum electrode for CIGS solar cells

    Directory of Open Access Journals (Sweden)

    Feng Jingxue

    2016-11-01

    Full Text Available Molybdenum (Mo films were deposited by radio frequency (RF, direct current (DC and mixed magnetron sputtering, respectively. With changing the deposition parameters including deposition pressure and power, the films show different surface morphology and crystallinity. Lower resistivity of the films is obtained in the DC mode and better reflectivity of the films is obtained in the RF mode. It is shown that the crystallinity increases when the deposition pressure decreases. The crystallinity and the grain size both increase as the deposition power increasing. The lowest resistivity of the single Mo film is 34×10-6 Ω·cm when the deposition pressure is 0.1 Pa and the deposition power is 300 W in the DC mode. In order to obtain lower resistivity, better adhesion and better reflectivity, bilayer films and tri-layer films were both deposited in different mode. They all show good adhesion and low resistivity. The Mo films deposited in mixed mode show better reflectivity. It is demonstrated that the resistivity of about 65×10-6 Ω·cm is achieved in DC/RF mode and the resistivity of about 61×10-6 Ω·cm is achieved in RF/DC/RF mode. And the tri-layer films achieved in RF/DC/RF mode have better reflectivity than bilayer films achieved in DC/RF mode. The tri-layer films achieved in RF/DC/RF mode is appropriate for using as the electrode of CIGS solar cells.

  20. Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study.

    Science.gov (United States)

    Rezaei, Nasim; Isabella, Olindo; Vroon, Zeger; Zeman, Miro

    2018-01-22

    A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer with low refractive index and proper thickness can significantly reduce absorption in Mo in the long wavelength regime and improve the device's rear reflectance, thus leading to enhanced light absorption in the CIGS layer. Therefore, we optimized a realistic two-layer MgF 2 / Al 2 O 3 dielectric spacer to exploit (i) the passivation properties of ultra-thin Al 2 O 3 on the CIGS side for potential high open-circuit voltage and (ii) the low refractive index of MgF 2 on the Mo side to reduce its optical losses. Combining our realistic spacer with optically-optimized point contacts increases the implied photocurrent density of a 750 nm-thick CIGS layer by 10% for the wavelengths between 700 and 1150 nm with respect to the reference cell. The elimination of plasmonic resonances in the new structure leads to a higher electric field magnitude at the bottom of CIGS layer and justifies the improved optical performance.

  1. Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr{sub 2}O{sub 3} diffusion barrier formed on stainless steel substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sim, Jae-Kwan; Lee, Seung-Kyu; Kim, Jin-Soo; Jeong, Kwang-Un; Ahn, Haeng-Keun; Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr

    2016-12-15

    Highlights: • A chromium oxide layer is formed as diffusion barrier by thermal oxidation process on STS substrate. • A Cr{sub 2}O{sub 3} layer effectively reduces impurities diffusion into the CIGS absorber layer. • The Cr{sub 2}O{sub 3} layer plays an important role in increasing the efficiency by reduction of impurity diffusion. - Abstract: It is known that the efficiency of flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells fabricated on stainless-steel (STS) substrates deteriorates due to iron (Fe) and Cr impurities diffusing into the CIGS absorber layer. To overcome this problem, a nanoscale homomorphic chromium oxide layer was formed as a diffusion barrier by thermal oxidation on the surface of STS substrates for 1 min at 600 °C in oxygen atmosphere. By TEM and grazing-incidence X-ray diffraction (GIXRD), it was confirmed that the formed oxide layer on surface of STS substrates was a Cr{sub 2}O{sub 3} layer. It was found that the formed homomorphic Cr{sub 2}O{sub 3} thin layer of about 15 nm thickness was an effective diffusion barrier to reduce impurity diffusion into the CIGS layer by secondary ion mass spectroscopy (SIMS). In contrast to the efficiency of CIGS solar cell without homomorphic Cr{sub 2}O{sub 3} diffusion layer is 8.6%, whereas with diffusion barrier it increases to 10.6% because of impurities such as Fe and Cr from the STS substrate into the CIGS layer. It reveals that the layer formed on the surface of STS substrate by thermal oxidation process plays an important role in increasing the performance of CIGS solar cells.

  2. Flexible CIGS solar cells on large area polymer foils with in-line deposition methods and application of alternative back contacts - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, A. N.

    2009-08-15

    This illustrated report for the Swiss Federal Office of Energy (SFOE) summarises the work performed within this project and also reports on synergies with other projects that helped to make a significant contribution to the development of CIGS thin film solar cells on flexible substrates such as polymer foils. The project's aims were to learn more about up-scaling issues and to demonstrate the abilities required for the processing of layers on large area polyimide foils for flexible CIGS solar cells. Custom-built evaporators that were designed and constructed in-house are described. A CIGS system for in-line deposition was also modified for roll-to-roll deposition and alternative electrical back contacts to conventional ones were evaluated on flexible polyimide foils. The objectives of the project and the results obtained are looked at and commented on in detail.

  3. Materials Characterization of CIGS solar cells on Top of CMOS chips

    NARCIS (Netherlands)

    Lu, J.; Liu, W.; Kovalgin, A.Y.; Sun, Y.; Schmitz, J.; Venkatasubramanian, R.; Radousky, H.; Liang, H.

    2011-01-01

    In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement

  4. Single-graded CIGS with narrow bandgap for tandem solar cells.

    Science.gov (United States)

    Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

    2018-01-01

    Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

  5. Identifying parasitic current pathways in CIGS solar cells by modelling dark J-V response

    NARCIS (Netherlands)

    Williams, B.L.; Smit, S.; Kniknie, B.J.; Bakker, K.; Keuning, W.; Schropp, R.E.I.; Creatore, M.; Kessels, W.M.M.

    2015-01-01

    The non-uniform presence of shunting defects is a significant cause of poor reproducibility across large-area solar cells, or from batch-to-batch for small area cells, but the most commonly used value for shunt parameterisation (the shunt resistance) fails to identify the cause for shunting. Here,

  6. Nanosecond laser scribing of CIGS thin film solar cell based on ITO bottom contact

    Science.gov (United States)

    Kuk, Seungkuk; Wang, Zhen; Fu, Shi; Zhang, Tao; Yu, Yi Yin; Choi, JaeMyung; Jeong, Jeung-hyun; Hwang, David J.

    2018-03-01

    Cu(In,Ga)Se2 (CIGS) thin films, a promising photovoltaic architecture, have mainly relied on Molybdenum for the bottom contact. However, the opaque nature of Molybdenum (Mo) poses limitations in module level fabrication by laser scribing as a preferred method for interconnect. We examined the P1, P2, and P3 laser scribing processes on CIGS photovoltaic architecture on the indium tin oxide (ITO) bottom contact with a cost-effective nanosecond pulsed laser of 532 nm wavelength. Laser illuminated from the substrate side, enabled by the transparent bottom contact, facilitated selective laser energy deposition onto relevant interfaces towards high-quality scribing. Parametric tuning procedures are described in conjunction with experimental and numerical investigation of relevant mechanisms, and preliminary mini-module fabrication results are also presented.

  7. Semi-transparent photovoltaic glazing based on electrodeposited CIGS solar cells on patterned molybdenum/glass substrates

    Directory of Open Access Journals (Sweden)

    Sidali Tarik

    2018-01-01

    Full Text Available In this paper, a new way of preparing semi-transparent solar cells using Cu(In1−xGaxSe2 (CIGS chalcopyrite semiconductors as absorbers for BIPV applications is presented. The key to the elaboration process consists in the co-electrodeposition of Cu-In-Ga mixed oxides on submillimetric hole-patterned molybdenum substrate, followed by thermal reduction to metallic alloys and selenisation. This method has the advantage of being a selective deposition technique where the thin film growth is carried out only on Mo covered areas. Thus, after annealing, the transparency of the sample is always preserved, allowing light to pass through the device. A complete device (5 × 5 cm2 with 535 μm diameter holes and total glass aperture of around 35% shows an open circuit voltage (VOC of 400 mV. Locally, the I-V curves reveal a maximum efficiency of 7.7%, VOC of 460 mV, JSC of 24 mA.cm−2 in an area of 0.1 cm2 with 35% aperture. This efficiency on the semi-transparent area is equivalent to a record efficiency of 11.9% by taking into account only the effective area.

  8. Semi-transparent photovoltaic glazing based on electrodeposited CIGS solar cells on patterned molybdenum/glass substrates

    Science.gov (United States)

    Sidali, Tarik; Bou, Adrien; Coutancier, Damien; Chassaing, Elisabeth; Theys, Bertrand; Barakel, Damien; Garuz, Richard; Thoulon, Pierre-Yves; Lincot, Daniel

    2018-03-01

    In this paper, a new way of preparing semi-transparent solar cells using Cu(In1-xGax)Se2 (CIGS) chalcopyrite semiconductors as absorbers for BIPV applications is presented. The key to the elaboration process consists in the co-electrodeposition of Cu-In-Ga mixed oxides on submillimetric hole-patterned molybdenum substrate, followed by thermal reduction to metallic alloys and selenisation. This method has the advantage of being a selective deposition technique where the thin film growth is carried out only on Mo covered areas. Thus, after annealing, the transparency of the sample is always preserved, allowing light to pass through the device. A complete device (5 × 5 cm2) with 535 μm diameter holes and total glass aperture of around 35% shows an open circuit voltage (VOC) of 400 mV. Locally, the I-V curves reveal a maximum efficiency of 7.7%, VOC of 460 mV, JSC of 24 mA.cm-2 in an area of 0.1 cm2 with 35% aperture. This efficiency on the semi-transparent area is equivalent to a record efficiency of 11.9% by taking into account only the effective area.

  9. Adhesion Improvement and Characterization of Magnetron Sputter Deposited Bilayer Molybdenum Thin Films for Rear Contact Application in CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    Weimin Li

    2016-01-01

    Full Text Available Molybdenum (Mo thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP deposited bottom layer and a low pressure (LP deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.

  10. The Effect of Sputtering Parameters on the Film Properties of Molybdenum Back Contact for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    Peng-cheng Huang

    2013-01-01

    Full Text Available Molybdenum (Mo thin films are widely used as a back contact for CIGS-based solar cells. This paper determines the optimal settings for the sputtering parameters for an Mo thin film prepared on soda lime glass substrates, using direct current (dc magnetron sputtering, with a metal Mo target, in an argon gas environment. A Taguchi method with an L9 orthogonal array, the signal-to-noise ratio, and an analysis of variances is used to determine the performance characteristics of the coating operation. The main sputtering parameters, such as working pressure (mTorr, dc power (W, and substrate temperature (°C, are optimized with respect to the structural features, surface morphology, and electrical properties of the Mo films. An adhesive tape test is performed on each film to determine the adhesion strength of the films. The experimental results show that the working pressure has the dominant effect on electrical resistivity and reflectance. The intensity of the main peak (110 for the Mo film increases and the full width at half maximum decreases gradually as the sputtering power is increased. Additionally, the application of an Mo bilayer demonstrates good adherence and low resistivity.

  11. Zinc Sulfide Buffer Layer for CIGS Solar Cells Prepared by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Rui-Wei You

    2016-11-01

    Full Text Available In this study, ZnS thin films were successfully synthesized by chemical bath deposition (CBD with starting materials of NH2-NH2, SC(NH22, and ZnSO4‧7H2O. ZnS thin films were deposited with different time on glass substrates by CBD at 80oC and pH=9. Based on X-ray diffraction (XRD patterns, it is found that the ZnS thin films exhibit cubic polycrystalline phase. It was found that the optimum deposition time is 90 min for preparing ZnS thin film that is suitable as buffer layer for CuIn1-xGaxSe2 solar cells. The thin film deposited for 90 min has high transmittance up to 80% in the spectra range from 350 nm to 800 nm, and the optical band gap is about 3.59 eV.

  12. Optical Simulation of Light Management in CIGS Thin-Film Solar Cells Using Finite Element Method

    Directory of Open Access Journals (Sweden)

    Nikola Bednar

    2015-12-01

    Full Text Available In this paper we present an optical simulation of light management in Cu(In,GaSe2 thin-film solar cells with reduced absorber layer thickness, with the goal of absorption enhancement in the absorber layer. The light management was achieved by texturing of the substrate layer, and the conformal growth of all the following layers was assumed. Two texturing shapes have been explored: triangular and convex, with different periods and height aspect ratios. The simulations have shown that significant enhancement of absorption within the absorber layer can be achieved using the proposed geometry. The results showed that the triangular textures with small periods (100–200 nm and high aspect ratios have the most prominent effect on the enhancement of absorption within the absorber layer, although they are difficult to achieve experimentally.

  13. Photoelectric properties of variably RTP processed CIGS{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Riediger, Julia; Ohland, Joerg; Knipper, Martin; Parisi, Juergen; Riedel, Ingo [Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg (Germany); Mainz, Roland; Merdes, Saoussen; Klaer, Joachim [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

    2011-07-01

    The open circuit voltage V{sub oc} of CuInS{sub 2} solar cells was found to improve via incorporation of gallium. The Cu(In,Ga)S{sub 2} absorber of the samples studied in this work was prepared by sputtering (Cu,Ga) and In precursors subsequently sulfurized via rapid thermal processing (RTP) in sulfur vapor. Distinctive top/bottom CuInS{sub 2}/CuGaS{sub 2} segregation has been observed which extent depends on the substrate temperature and holding time of the temperature during RTP-process. The insufficient gallium accumulation at the surface impedes high values of V{sub oc}.We studied the consequences of RTP-process parameter variation in regard of the interdiffusion of CuInS{sub 2} and CuGaS{sub 2}. Quantum efficiency (QE) and temperature-/illumination-dependent current-voltage (IV) profiling have been carried out for differently processed samples. These measurements provide the minimum band gap E{sub g} of the graded absorber layer, the temperature dependent V{sub oc} and the activation energy E{sub a} for carrier recombination. Drive level capacitance (DLCP) profiling reveals the spatially resolved in-depth variation of the doping/defect concentration close to the space charge region.

  14. Photoelectrochemical water splitting for hydrogen production using combination of CIGS2 solar cell and RuO2 photocatalyst

    International Nuclear Information System (INIS)

    Dhere, Neelkanth G.; Jahagirdar, Anant H.

    2005-01-01

    This paper presents the development of photoelectrochemical (PEC) cell for water splitting setup using multiple band gap combination of CuIn 1-x Ga x S 2 (CIGS2) thin-film photovoltaic (PV) cell and ruthenium oxide (RuO 2 ) photocatalyst. FSEC PV Materials Lab has developed a PEC setup consisting of two illuminated CIGS2 cells, a ruthenium oxide (RuO 2 ) anode deposited on titanium sheet for oxygen evolution and a platinum foil cathode for hydrogen evolution. With this combination, a PEC efficiency of 4.29% has been achieved. This paper also presents the research aimed at further improvements in the PEC efficiency by employing highly efficient photoanode that can be illuminated by photons not absorbed at the PV cell and by increasing the concentration of electrolyte solution (pH 10). The former will be achieved by employing a p-type transparent and conducting layer at the back of PV cell to transmit the unabsorbed photons, and the latter will reduce the resistance offered by the electrolyte. Concentration of the electrolyte was increased by five times, and the I-V characteristics of both RuO 2 and RuS 2 were measured with and without illumination. The results indicate that PEC efficiencies of over 9% can be achieved using RuS 2 with illumination and five times concentrated pH 10 solution instead of pH 10 with normal concentration

  15. Photoelectrochemical water splitting for hydrogen production using combination of CIGS2 solar cell and RuO{sub 2} photocatalyst

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, Neelkanth G. [University of Central Florida, Florida Solar Energy Center, 1679 Clearlake Road Cocoa, FL 32922-5703 (United States)]. E-mail: dhere@fsec.ucf.edu; Jahagirdar, Anant H. [University of Central Florida, Florida Solar Energy Center, 1679 Clearlake Road Cocoa, FL 32922-5703 (United States)

    2005-06-01

    This paper presents the development of photoelectrochemical (PEC) cell for water splitting setup using multiple band gap combination of CuIn{sub 1-x}Ga {sub x}S{sub 2} (CIGS2) thin-film photovoltaic (PV) cell and ruthenium oxide (RuO{sub 2}) photocatalyst. FSEC PV Materials Lab has developed a PEC setup consisting of two illuminated CIGS2 cells, a ruthenium oxide (RuO{sub 2}) anode deposited on titanium sheet for oxygen evolution and a platinum foil cathode for hydrogen evolution. With this combination, a PEC efficiency of 4.29% has been achieved. This paper also presents the research aimed at further improvements in the PEC efficiency by employing highly efficient photoanode that can be illuminated by photons not absorbed at the PV cell and by increasing the concentration of electrolyte solution (pH 10). The former will be achieved by employing a p-type transparent and conducting layer at the back of PV cell to transmit the unabsorbed photons, and the latter will reduce the resistance offered by the electrolyte. Concentration of the electrolyte was increased by five times, and the I-V characteristics of both RuO{sub 2} and RuS{sub 2} were measured with and without illumination. The results indicate that PEC efficiencies of over 9% can be achieved using RuS{sub 2} with illumination and five times concentrated pH 10 solution instead of pH 10 with normal concentration.

  16. Optical Design of Textured Thin-Film CIGS Solar Cells with Nearly-Invisible Nanowire Assisted Front Contacts

    Directory of Open Access Journals (Sweden)

    Joop van Deelen

    2017-04-01

    Full Text Available The conductivity of transparent front contacts can be improved by patterned metallic nanowires, albeit at the cost of optical loss. The associated optical penalty can be strongly reduced by texturization of the cell stack. Remarkably, the nanowires themselves are not textured and not covered in our design. This was shown by optical modeling where the width of the nanowire, the texture height and the texture period were varied in order to obtain a good insight into the general trends. The optical performance can be improved dramatically as the reflection, which is the largest optical loss, can be reduced by 95% of the original value. The spectra reveal absorption in the Cu(In,GaSe2 (CIGS layer of 95% and reflection below 2% over a large part of the spectrum. In essence, a virtually black CIGS cell stack can be achieved for textured cells with a metal nanogrid. Moreover, it turned out that the ratio between the width of the nanowire and the height of the texture is a critical parameter for optical losses.

  17. Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 1: a new theoretical procedure and comparison with other methodologies

    Science.gov (United States)

    Rangel-Kuoppa, Victor-Tapio; Albor-Aguilera, María-de-Lourdes; Hérnandez-Vásquez, César; Flores-Márquez, José-Manuel; González-Trujillo, Miguel-Ángel; Contreras-Puente, Gerardo-Silverio

    2018-04-01

    A new proposal for the extraction of the shunt resistance (R sh ) and saturation current (I sat ) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is given. First, the Cheung method is extended to obtain the series resistance (R s ), the ideality factor (n) and an upper limit for I sat . In this article which is Part 1 of two parts, two procedures are proposed to obtain fitting values for R sh and I sat within some voltage range. These two procedures are used in two simulated I-V curves (one in darkness and the other one under illumination) to recover the known solar cell parameters R sh , R s , n, I sat and the light current I lig and test its accuracy. The method is compared with two different common parameter extraction methods. These three procedures are used and compared in Part 2 in the I-V curves of CdS-CdTe and CIGS-CdS solar cells.

  18. Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 2: application to experimental IV measurements and comparison with other methods

    Science.gov (United States)

    Rangel-Kuoppa, Victor-Tapio; Albor-Aguilera, María-de-Lourdes; Hérnandez-Vásquez, César; Flores-Márquez, José-Manuel; Jiménez-Olarte, Daniel; Sastré-Hernández, Jorge; González-Trujillo, Miguel-Ángel; Contreras-Puente, Gerardo-Silverio

    2018-04-01

    In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (R sh ) and saturation current (I sat ) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (R s ) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain R sh and I sat . The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.

  19. Adhesion, resistivity and structural, optical properties of molybdenum on steel sheet coated with barrier layer done by sol–gel for CIGS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Amouzou, Dodji, E-mail: dodji.amouzou@fundp.ac.be [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium); Dumont, Jacques [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium); Fourdrinier, Lionel; Richir, Jean-Baptiste; Maseri, Fabrizio [CRM-Group, Boulevard de Colonster, B 57, 4000 Liège (Belgium); Sporken, Robert [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium)

    2013-03-01

    Molybdenum films are investigated on stainless steel substrates coated with polysilazane based sol–gel and SiO{sub x} layers for flexible CIGS solar cell applications. Thermal stability of the multilayer has been studied. The thickness of polysilazane films are significantly reduced (17%) after heat treatment suggesting a thermal degradation. Four different microstructures were found for Mo films by varying argon total pressure from 2.6 × 10{sup −1} Pa to 2.6 Pa. It was shown that continuous films, low sheet resistance (0.5 Ω/□) and well facetted grains can be achieved when Mo films are deposited on heated substrates at homologous temperature, T of 0.2. - Highlights: ► Steel sheet is functionalized for Cu[Inx,Ga(1 − x)Se2] solar cells. ► Varying deposition pressure impacts the microstructure of Mo films. ► High thermal stability of the sol gel based barrier layer has been investigated. ► Low sheet resistance and continuous Mo films have been obtained at 550°C. ► Thermal stability of functionalized steel sheets at 550°C has been investigated.

  20. NIR emitting K2SrCl4:Eu2+, Nd3+ phosphor as a spectral converter for CIGS solar cell

    Science.gov (United States)

    Tawalare, P. K.; Bhatkar, V. B.; Omanwar, S. K.; Moharil, S. V.

    2018-05-01

    Intense near-infrared emitting phosphor K2SrCl4:Eu2+,Nd3+ with various concentrations of Nd3+ were synthesized. These are characterized with X-ray diffraction, reflectance, photoluminescence emission and photoluminescence excitation spectroscopy, PL lifetime measurements. The emission can be excited by a broad band in near ultra violet region as a consequence of Eu2+→Nd3+ energy transfer. The efficiency of Eu2+→Nd3+ energy transfer is as high as 95%. Fluorescence decay curves for Eu2+ doped samples are almost exponential and described by τ = 500 ns. Eu2+ lifetimes are shortened after Nd3+ doping. Near infrared Emission intensity is limited by Nd3+→Nd3+ energy transfer and the consequent concentration quenching. Nd3+ emission matches well with the spectral response of CIGS and CIS solar cells. Absorption of near ultra violet radiations followed by conversion to near infrared indicates the potential application in solar photovoltaics.

  1. CIGS cells with metallized front contact: Longer cells and higher efficiency

    NARCIS (Netherlands)

    Deelen, J. van; Frijters, C.

    2017-01-01

    We have investigated the benefit of a patterned metallization on top of a transparent conductive oxide in CIGS thin-film solar panels. It was found that cells with a grid have a higher efficiency compared to cells with only a TCO. This was observed for all cell lengths used. Furthermore, metallic

  2. Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials

    Directory of Open Access Journals (Sweden)

    Anna M. K. Gustafsson

    2015-01-01

    Full Text Available Recycling of the semiconductor material copper indium gallium diselenide (CIGS is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be −0.5 V and −0.9 V (versus the Ag/AgCl reference electrode, respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective.

  3. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Xu, M. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Delft University of Technology, Optics Group, Van der Waalsweg 8, 2628 CH, Delft (Netherlands); Vroon, Z. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Zuyd Hogeschool, Nieuw Eyckholt 300, 6419 DJ, Heerlen (Netherlands); Belt, R. van de [Kriya Materials BV, Urmonderbaan 22, 6167 RD, Geleen (Netherlands); Buskens, P., E-mail: pascal.buskens@tno.nl, E-mail: buskens@dwi.rwth-aachen.de [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); DWI – Leibniz Institute for Interactive Materials, Forckenbeckstrasse 50, 52056, Aachen (Germany)

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  4. Improving the efficiency of copper indium gallium (Di-selenide (CIGS solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Directory of Open Access Journals (Sweden)

    M. Burghoorn

    2014-12-01

    Full Text Available Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-selenide (CIGS solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%. No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  5. In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Aryal

    2012-01-01

    Full Text Available Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.

  6. Development of Electrodeposited CIGS Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-09-357

    Energy Technology Data Exchange (ETDEWEB)

    Neale, Nathan [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-09-01

    At present, most PV materials are fabricated by vacuum technologies. Some of the many disadvantages of vacuum technology are complicated instrumentation, material waste, high cost of deposition per surface area, and instability of some compounds at the deposition temperature. Solution-based approaches for thin-film deposition on large areas are particularly desirable because of the low capital cost of the deposition equipment, relative simplicity of the processes, ease of doping, uniform deposition on a variety of substrates (including interior and exterior of tubes and various nonplanar devices), and potential compatibility with high-throughput (e.g., roll-to-roll) processing. Of the nonsilicon solar photovoltaic device modules that have been deployed to date, those based on the n-CdS/p-CdTe is a leading candidate. Two features in the optical characteristics of CdTe absorber are particularly attractive for photovoltaic conversion of sunlight; (a) its energy bandgap of 1.5 eV, which provides an optimal match with the solar spectrum and thus facilitates its efficient utilization and (b) the direct mode of the main optical transition which results in a large absorption coefficient and turn permits the use of thin layer (1-2 um) of active material. Thin films of CdTe required for these devices have been fabricated by a variety of methods (e.g., vapor transport deposition, vacuum deposition, screen printing and close-spaced sublimation). Electrodeposition is another candidate deserves more attention. This project will focus on delivering low-cost, high efficiency electrodeposited CdTe-based device.

  7. Monolithic two-terminal hybrid a-Si:H/CIGS tandem cells

    NARCIS (Netherlands)

    Blanker, J.; Vroon, Z.; Zeman, M.; Smets, A.

    2016-01-01

    Copper-indium-gallium-di-selenide (CIGS) is the present record holder in lab-scale thin-film photovoltaics (TFPV). One of the problems of this PV technology is the scarcity of indium. Multi-junction solar cells allow better spectral utilization of the light spectrum, while the required current

  8. Optical Design of Textured Thin-Film CIGS Solar Cells with Nearly-Invisible Nanowire Assisted Front Contacts

    NARCIS (Netherlands)

    Deelen, J. van; Omar, A.; Barink, M.

    2017-01-01

    The conductivity of transparent front contacts can be improved by patterned metallic nanowires, albeit at the cost of optical loss. The associated optical penalty can be strongly reduced by texturization of the cell stack. Remarkably, the nanowires themselves are not textured and not covered in our

  9. Design and long-term monitoring of DSC/CIGS tandem solar module

    International Nuclear Information System (INIS)

    Vildanova, M F; Nikolskaia, A B; Kozlov, S S; Shevaleevskiy, O I

    2015-01-01

    This paper describes the design and development of tandem dye-sensitized/Cu(In, Ga)Se (DSC/CIGS) PV modules. The tandem PV module comprised of the top DSC module and a bottom commercial 0,8 m 2 CIGS module. The top DSC module was made of 10 DSC mini-modules with the field size of 20 × 20 cm 2 each. Tandem DSC/CIGS PV modules were used for providing the long-term monitoring of energy yield and electrical parameters in comparison with standalone CIGS modules under outdoor conditions. The outdoor test facility, containing solar modules of both types and a measurement unit, was located on the roof of the Institute of Biochemical Physics in Moscow. The data obtained during monitoring within the 2014 year period has shown the advantages of the designed tandem DSC/CIGS PV-modules over the conventional CIGS modules, especially for cloudy weather and low-intensity irradiation conditions. (paper)

  10. Improvements in CdTe- and CIGS-based thin-film solar cells and investigation on new materials for photovoltaic applications.

    OpenAIRE

    Rosa, Greta

    2018-01-01

    Currently, thin-film solar cells are one of the most promising technologies for low-cost renewable energy production. CdTe- and CuInGaSe2-based cells, which achieved record efficiencies of 22.1% and 22.6% respectively, are the most attractive among thin-film solar cells. These high efficiencies have had a huge influence in making them highly competitive in the photovoltaic market, with an estimated final cost per module lower than US $ 0.50 per peak-watt. At the Thin Film Laboratory of the...

  11. High throughput CIGS solar cell fabrication via ultra-thin absorber layer with optical confinement and (Cd, CBD)-free heterojunction partner

    Energy Technology Data Exchange (ETDEWEB)

    Marsillac, Sylvain [Old Dominion Univ., Norfolk, VA (United States)

    2015-11-30

    The main objective of this proposal was to use several pathways to reduce the production cost of Cu(In,Ga)Se2 (CIGS) PV modules and therefore the levelized cost of energy (LCOE) associated with this technology. Three high cost drivers were identified, nominally: 1) Materials cost and availability; 2) Large scale uniformity; 3) Improved throughput These three cost drivers were targeted using the following pathways: 1) Reducing the thickness of the CIGS layer while enhancing materials quality; 2) Developing and applying enhanced in-situ metrology via real time spectroscopic ellipsometry; 3) Looking into alternative heterojunction partner, back contact and anti-reflection (AR) coating Eleven main Tasks were then defined to achieve these goals (5 in Phase 1 and 6 in Phase 2), with 11 Milestones and 2 Go/No-go decision points at the end of Phase 1. The key results are summarized below

  12. Mg-doped ZnO thin films deposited by the atomic layer chemical vapor deposition for the buffer layer of CIGS solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhao-Hui [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Center for Photovoltaic and Solar Energy, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen city 518055 (China); Cho, Eou-Sik [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@gachon.ac.kr [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of)

    2014-09-30

    Highlights: • Mg-doped ZnO film as CIGS buffer was prepared by ALD process. • The grain size of ZnO-like hexagonal phase decreased with Mg content. • The transmittance and crystallinity increased but the band gap decreased with temperature. - Abstract: Mg-doped ZnO [(Zn, Mg)O] thin films were prepared by atomic layer chemical vapor deposition (ALCVD) process with different Mg content, using diethyl zinc, biscyclopentadienyl magnesium, and water as the metal and oxygen sources, respectively. The ratio of Mg to Zn was varied by changing the pulse ratio of MgCp{sub 2} to DEZn precursor to study its effect on the properties of (Zn, Mg)O thin films. From the experimental results, it was shown that the grain size of the ZnO-like hexagonal phase (Zn, Mg)O decreased as the Mg content increased. But the transmittance and optical band gap of (Zn, Mg)O films increased with the increase of the Mg content. In addition, the effect of the substrate temperature on the properties of (Zn, Mg)O films was also investigated. The deposition rate, transmittance, and crystallinity of (Zn, Mg)O films increased as the substrate temperature increased. But its band gap decreased slightly with the increase of substrate temperature.

  13. Surface microstructure evolution of highly transparent and conductive Al-doped ZnO thin films and its application in CIGS solar cells

    Science.gov (United States)

    Cheng, Ke; Liu, Jingjing; Jin, Ranran; Liu, Jingling; Liu, Xinsheng; Lu, Zhangbo; Liu, Ya; Liu, Xiaolan; Du, Zuliang

    2017-07-01

    Aluminum-doped zinc oxide (AZO) has attained intensive attention as being a very good transparent conducting oxide for photovoltaic applications. In this work, AZO films have been deposited on glass substrate by radio frequency (RF) magnetron sputtering. The influences of substrate temperatures on morphological, structural, optical and electrical properties of AZO films were systematically investigated. The results indicate that all AZO films have the hexagonal structure with c-axis preferred orientation. Morphological and electrical measurements have revealed that the substrate temperatures have strong influence on the microstructure, optical and electrical properties of AZO films. The AZO film is highly transparent from ultraviolet up to near infrared range with highest average transparency exceeding 83%. The minimum resistivity is as low as 6.1 × 10-4 Ω cm. The carrier concentration and mobility are as high as 3.357 × 1020 cm-3 and 30.48 cm2/Vs, respectively. Finally, the performances of the AZO film are evaluated by its practical application in Cu(In1-xGax)Se2 (CIGS) photovoltaic device as a transparent electrode. Benefited from its highly transparent and conductive feature, the most efficient device reveals an efficiency of 7.8% with a short-circuit current density of 28.99 mA/cm2, an open-circuit voltage of 430 mV, and a fill factor of 62.44 under standard conditions.

  14. Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

    KAUST Repository

    Alsaggaf, Ahmed

    2014-06-01

    Cu(In, Ga)Se2 (CIGS) ink was formulated from CIGS powder, polyvinyl butyral PVB, terpineol and polyester/polyamine co-polymeric dispersant KD-1. Thin films with different thicknesses were deposited on PET substrate using screen-printing followed by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying at 200 °C, which is well below the decomposition temperature of the PET substrate. It was observed by SEM that 20 pulses of 532nm and 60 mJ/cm2 Nd:YAG laser annealing causes atomic diffusion on the near surface area. Furthermore, FIB cross section images were utilized to monitor the effect of laser annealing in the depth of the layer. Laser annealing effects were compared to as deposited layer using XRD in reference to CIGS powder. The measurement shows that crystallinity of deposited CIGS is retained while EDS quantification and atomic ratio result in gradual loss of selenium as laser energy increases. The laser parameters were tuned in an effort to utilize laser annealing of screen-printed CIGS layer as a layer annealing method for solar cell fabrication process.

  15. Optical characteristics of thin CIGS cells on TCO back contact

    NARCIS (Netherlands)

    Deelen, J. van; Kniknie, B.; Vroon, Z.A.E.P.; Wuerz, R.; Kessler, F.

    2014-01-01

    Reduction of CIGS layer thickness could translate in significant cost reduction. CIGS was made on transparent conductive oxide (TCO) to allow for optical characterization. This data was compared with external quantum efficiency (EQE) data. The results suggest that changes in surface morphology are

  16. Controlled formation of MoSe{sub 2} by MoN{sub x} thin film as a diffusion barrier against Se during selenization annealing for CIGS solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Chan-Wook [School of Chemical Engineering, Yeungnam University, Gyeongsangbuk-do 712-749 (Korea, Republic of); Cheon, Taehoon [School of Materials Science and Engineering, Yeungnam University, Gyeongsangbuk-do 712-749 (Korea, Republic of); Center for Core Research Facilities, DaeguGyeongbuk Institute of Science & Technology, Daegu (Korea, Republic of); Kim, Hangil [School of Materials Science and Engineering, Yeungnam University, Gyeongsangbuk-do 712-749 (Korea, Republic of); Kwon, Min-Su [School of Chemical Engineering, Yeungnam University, Gyeongsangbuk-do 712-749 (Korea, Republic of); Kim, Soo-Hyun [School of Materials Science and Engineering, Yeungnam University, Gyeongsangbuk-do 712-749 (Korea, Republic of)

    2015-09-25

    Highlights: • Mo/MoN{sub x}/Mo multilayer was investigated as a back contact for CIGS solar cell. • The MoN{sub x} protected the underlying Mo layer during high temperature selenization. • The formation of MoSe{sub 2} layer was precisely controlled. • The diffusion barrier performance of MoN{sub x} against Se was evaluated using TEM analysis. - Abstract: This study investigated the interfacial reactions and electrical properties of a Mo single layer and Mo/MoN{sub x}/Mo multilayer during high temperature selenization annealing. The Mo single layer was converted easily to MoSe{sub 2}, which was 7 times thicker than the Mo layer consumed ∼900 nm, by selenization at 460 °C for 10 min and the sheet resistance increased 8 fold compared to that of the as-deposited Mo film. On the other hand, in the Mo/MoN{sub x}/Mo structure, transmission electron microscopy (TEM) showed that the MoSe{sub 2} transformation was localized only in the top Mo layer and the bottom Mo layer was completely unaffected, even after selenization at 560 °C. The sheet resistance of the multilayer was relatively unchanged by selenization. This suggests that the MoN{sub x} layer performed well as a diffusion barrier against Se and the thickness of MoSe{sub 2} can be controlled precisely by adjusting the top Mo layer thickness. Furthermore, TEM and energy dispersive spectroscopy analysis showed that the selenized multilayer consisted of MoSe{sub 2}/Mo/MoN{sub x}/Mo, in which the top Mo layer of 60 nm was not fully converted to MoSe{sub 2} and 20 nm was left unreacted. The residual Mo interlayer located at the interface of MoSe{sub 2} and MoN{sub x} is believed to be beneficial for the ohmic contact of the selenized multilayer.

  17. Electrochemical behavior of CIGS electrodeposition for applications to photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyunju; Ji, Changwook; Kim, Yangdo; Hwang, Yoonhwae [Pusan National University, Busan (Korea, Republic of); Lee, Jaeho [Hongik University, Seoul (Korea, Republic of); Jo, Ilguk [Colorado School of Mines, Golden, CO (United States); Kim, Hyoungchan [Korea Institute of Industrial Technology, Busan (Korea, Republic of)

    2014-04-15

    The electrodeposition mechanism of Cu(In,Ga)Se{sub 2} (CIGS) thin films on ITO substrates was examined by using cyclic voltammetry (CV). The CV study was performed in unitary In, binary In-Se, ternary Cu-In-Se, and quaternary Cu-In-Ga-Se systems. CV of the Cu-In-Ga-Se system revealed a reduction peak at -0.6 V with the addition of GaCl{sub 3} and showed that the current density was affected significantly by the concentrations of GaCl{sub 3} and InCl{sub 3}. This is probably due to the adsorption-site competition between In{sup 3+} and Ga{sup 3+} on the electrode surface. Energy dispersive X-ray spectroscopy confirmed the CV results. The composition of Ga in the CIGS films increased with increasing concentration of GaCl{sub 3} in the electrolyte whereas the composition of In decreased sharply. The as-deposited films were annealed at 500 .deg. C in a N{sub 2} atmosphere for crystallization. XRD revealed three major peaks corresponding to the (112), (220) and (312) planes of CIGS chalcopyrite respectively. On the other hand, a secondary phase, such as In{sub 4}Se{sub 3}, was observed in the CIGS films containing a high In composition.

  18. Layer-by-Layer Nanoassembly of Copper Indium Gallium Selenium Nanoparticle Films for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    A. Hemati

    2012-01-01

    Full Text Available Thin films of CIGS nanoparticles interdigited with polymers have been fabricated through a cost-effective nonvacuum film deposition process called layer-by-layer (LbL nanoassembly. CIGS nanoparticles synthesized by heating copper chloride, indium chloride, gallium chloride, and selenium in oleylamine were dispersed in water, and desired surface charges were obtained through pH regulation and by coating the particles with polystyrene sulfonate (PSS. Raising the pH of the nanoparticle dispersion reduced the zeta-potential from +61 mV at pH 7 to −51 mV at pH 10.5. Coating the CIGS nanoparticles with PSS (CIGS-PSS produced a stable dispersion in water with −56.9 mV zeta-potential. Thin films of oppositely charged CIGS nanoparticles (CIGS/CIGS, CIGS nanoparticles and PSS (CIGS/PSS, and PSS-coated CIGS nanoparticles and polyethylenimine (CIGS-PSS/PEI were constructed through the LbL nanoassembly. Film thickness and resistivity of each bilayer of the films were measured, and photoelectric properties of the films were studied for solar cell applications. Solar cell devices fabricated with a 219 nm CIGS film, when illuminated by 50 W light-source, produced 0.7 V open circuit voltage and 0.3 mA/cm2 short circuit current density.

  19. Metal-assisted chemical etching of CIGS thin films for grain size analysis

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

    2016-09-15

    Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Electrodeposition route to synthesize cigs films – an economical way ...

    African Journals Online (AJOL)

    Electrodeposition route to synthesize cigs films – an economical way to harness solar energy. ... for solar cells, how the charge separation in this nano scale photovoltaic (PV) materials occurs which help in absorption of radiation, and the electro-deposition route, a low cost one, produces thin film solar cells are analyzed.

  1. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    NARCIS (Netherlands)

    Burghoorn, M.M.A.; Kniknie, B.J.; Deelen, J. van; Xu, M.; Vroon, Z.A.E.P.; Ee, R.J. van; Belt, R. van de; Buskens, P.J.P.

    2014-01-01

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed

  2. TEMPERATURE EFFECT OF ELECTRICAL PROPERTIES OF CIGS ...

    African Journals Online (AJOL)

    2011-06-30

    Jun 30, 2011 ... Key words: Thin film solar cells, SCAPS, CIGS, temperature, effiency energetic. 1. INTRODUCTION ... technology are the low material consumption and the high efficiency that has been demonstrated, which .... [2] S. Wenham, M. Green, M. Watt, Applied Photovoltaics, The University of New. South Wales ...

  3. Electrochemical etching of molybdenum for shunt removal in thin film solar cells

    NARCIS (Netherlands)

    Hovestad, A.; Bressers, P.M.M.C.; Meertens, R.M.; Frijters, C.H.; Voorthuijzen, W.P.

    2015-01-01

    High yield and reproducible production is a major challenge in up-scaling thin film Cu(In,Ga)Se2(CIGS) solar cells to large area roll-to-roll industrial manufacturing. Pinholes enabling Ohmic contact between the ZnO:Al front-contact and Mo back contact of the CIGS cell create electrical shunts that

  4. A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to achieve low-cost high-efficiency thin-film solar cells, a novel Semiconductor Photovoltaic (PV) active material CuIn1-xGaxSe2 (CIGS) and thin-film Electro-Deposition (ED) technology is explored. Firstly,the PV materials and technologies is investigated, then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported. These results shows that high quality CIGS polycrystalline thin-films can be obtained by the ED method, in which the polycrystalline CIGS is definitely identified by the (112), (204, 220) characteristic peaks of the tetragonal structure, the continuous CIGS thin-film layers with particle average size of about 2μm of length and around 1.6μm of thickness. The thickness and solargrade quality of CIGS thin-films can be produced with good repeatability. Discussion and analysis on the ED technique, CIGS energy band and sodium (Na) impurity properties, were also performed. The alloy CIGS exhibits not only increasing band-gap with increasing x, but also a change in material properties that is relevant to the device operation. The beneficial impurity Na originating from the low-cost soda-lime glass substrate becomes one prerequisite for high quality CIGS films. These novel material and technology are very useful for low-cost high-efficiency thin-film solar cells and other devices.

  5. Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vermang, Bart, E-mail: Bart.Vermang@angstrom.uu.se [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); ESAT-KU Leuven, University of Leuven, Leuven 3001 (Belgium); Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); Gunnarsson, Rickard; Pilch, Iris; Helmersson, Ulf [Plasma & Coatings Physics, University of Linköping, Linköping 58183 (Sweden); Kotipalli, Ratan; Henry, Frederic; Flandre, Denis [ICTEAM/IMNC, Université Catholique de Louvain, Louvain-la-Neuve 1348 (Belgium)

    2015-05-01

    Al{sub 2}O{sub 3} rear surface passivated ultra-thin Cu(In,Ga)Se{sub 2} (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al{sub 2}O{sub 3} layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm{sup 2}; as compared to equivalent CIGS solar cells with a standard back contact. - Highlights: • Proof-of-principle ultra-thin CIGS solar cells have been fabricated. • The cells have Mo nano-particles (NPs) as local rear contacts. • An Al{sub 2}O{sub 3} film passivates the CIGS rear surface between these nano-particles. • [Ga]/([Ga] + [In]) grading is used to reduce Mo-NP/CIGS interface recombination.

  6. Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization

    Energy Technology Data Exchange (ETDEWEB)

    Kang, San; Sharma, Rahul; Sim, Jae-Kwan [Semiconductor Materials Processing Laboratory, School of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Deokjin-dong 664-14, Jeonju 561-756 (Korea, Republic of); Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr [Semiconductor Materials Processing Laboratory, School of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Deokjin-dong 664-14, Jeonju 561-756 (Korea, Republic of)

    2013-06-25

    Highlights: ► Systematic band gap engineering to fabricate tandem Cu(In,Ga)Se{sub 2} absorption layers. ► XRD shows prominent (1 1 2) reflection shift for attributed CIS, CIGS, and CGS phases. ► Optical transmittance and reflectance spectrum are improved towards infrared region. ► The Cu/In + Ga and Ga/In + Ga effect is matched with highest efficient solar cell. ► Tandem CIS/CIGS/CGS layer, the band gap is increased from 1.15 to 2.06 eV. -- Abstract: Band gap engineering was executed to fabricate a multi-junction stacked i.e. tandem Cu(In,Ga)Se{sub 2} (CIGS) absorption layer. The CIGS absorption layers consist of multi-junction stacked CIS/CIGS/CGS thin films from bottom to top with increasing band gap. Tandem CIGS layers were fabricated by using three precursor of CuIn, In/CuGa/In, and CuGa onto the Mo coated soda-lime glass (SLG) by the sequential sputtering of CuIn, CuGa, and In targets. The CIG precursors were converted into CIGS absorption thin film by selenization process. From the X-ray diffraction (XRD) pattern of CIS/CIGS/CGS tandem layer, with the prominent peak shift for (1 1 2) reflections was attributed to the individual CIS, CIGS, and CGS phases at 26.76°, 27.15°, and 27.65° diffraction angles, respectively. The morphologies and atomic (at%) composition uniformity onto the surface and along the depth were extensively analyzed with field effect scanning electron microscope (FESEM) attached energy dispersive spectroscopy (EDS) and secondary ion mass spectroscopy (SIMS). The optical properties such as transmittance, reflectance and absorbance were found to improve in the infrared region for all the tandem CIGS layers. Near the fundamental absorption edge, the absorption coefficient was approached to 10{sup 5} cm{sup −1} for CIS/CIGS/CGS tandem layer. The straight-line behavior indicates that the films have a direct band gap. The band gap was found to increase from 1.15 to 1.74 eV with the Ga-grading along the depth of individual CIS, CIGS

  7. Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization

    International Nuclear Information System (INIS)

    Kang, San; Sharma, Rahul; Sim, Jae-Kwan; Lee, Cheul-Ro

    2013-01-01

    Highlights: ► Systematic band gap engineering to fabricate tandem Cu(In,Ga)Se 2 absorption layers. ► XRD shows prominent (1 1 2) reflection shift for attributed CIS, CIGS, and CGS phases. ► Optical transmittance and reflectance spectrum are improved towards infrared region. ► The Cu/In + Ga and Ga/In + Ga effect is matched with highest efficient solar cell. ► Tandem CIS/CIGS/CGS layer, the band gap is increased from 1.15 to 2.06 eV. -- Abstract: Band gap engineering was executed to fabricate a multi-junction stacked i.e. tandem Cu(In,Ga)Se 2 (CIGS) absorption layer. The CIGS absorption layers consist of multi-junction stacked CIS/CIGS/CGS thin films from bottom to top with increasing band gap. Tandem CIGS layers were fabricated by using three precursor of CuIn, In/CuGa/In, and CuGa onto the Mo coated soda-lime glass (SLG) by the sequential sputtering of CuIn, CuGa, and In targets. The CIG precursors were converted into CIGS absorption thin film by selenization process. From the X-ray diffraction (XRD) pattern of CIS/CIGS/CGS tandem layer, with the prominent peak shift for (1 1 2) reflections was attributed to the individual CIS, CIGS, and CGS phases at 26.76°, 27.15°, and 27.65° diffraction angles, respectively. The morphologies and atomic (at%) composition uniformity onto the surface and along the depth were extensively analyzed with field effect scanning electron microscope (FESEM) attached energy dispersive spectroscopy (EDS) and secondary ion mass spectroscopy (SIMS). The optical properties such as transmittance, reflectance and absorbance were found to improve in the infrared region for all the tandem CIGS layers. Near the fundamental absorption edge, the absorption coefficient was approached to 10 5 cm −1 for CIS/CIGS/CGS tandem layer. The straight-line behavior indicates that the films have a direct band gap. The band gap was found to increase from 1.15 to 1.74 eV with the Ga-grading along the depth of individual CIS, CIGS, and CGS thin films

  8. Annealing enhancement effect by light illumination on proton irradiated Cu(In, Ga)Se2 thin-film solar cells

    International Nuclear Information System (INIS)

    Kawakita, Shirou; Imaizumi, Mitsuru; Matsuda, Sumio; Yamaguchi, Masafumi; Kushiya, Katsumi; Ohshima, Takeshi; Itoh, Hisayoshi

    2002-01-01

    In this paper, we investigated the high radiation tolerance of copper indium gallium di-selenide (CIGS) thin-film solar cells by conducting in situ measurements of short circuit current and open circuit voltage of CIGS thin-film solar cells during and after proton irradiation under short circuit condition. We found that the annealing rate of proton-induced defects in CIGS thin-film solar cells under light illumination with an AM0 solar simulator is higher than that under dark conditions. The activation energy of proton-induced defects in the CIGS thin-film solar cells with (without) light illumination is 0.80 eV (0.92 eV), which implies on enhanced defect annealing rate in CIGS thin-film solar cells due to minority-carrier injection. (author)

  9. Barrier effect of AlN film in flexible Cu(In,Ga)Se{sub 2} solar cells on stainless steel foil and solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Li, Boyan; Li, Jianjun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Wu, Li [The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071 (China); Liu, Wei; Sun, Yun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Zhang, Yi, E-mail: yizhang@nankai.edu.cn [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China)

    2015-04-05

    Highlights: • The adhension between AlN film and Mo are verygood. • AlN film can be effectively used as the barrier of flexible CIGS solar cell on SS substrate. • AlN film is suitable as the insulation barrier of flexible CIGS solar cell on SS substrate. - Abstract: The AlN film deposited by DC magnetron sputtering on stainless steel (SS) foils was used as the barrier in flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells on stainless steel foil and characterized comprehensively by X-ray diffraction (XRD), scanning electron microscopy (SEM), I–V, and QE measurements study. The study of AlN as insulation barrier in the flexible CIGS solar cell showed that the adhesion strength between the SS foil and the deposited AlN film was very strong even after annealing at high temperature at 530 °C. More importantly, a high resistance of over 10 MΩ was remained with the film with thickness of around 200 nm after annealing. This indicates that the AlN film is suitable as an effective insulation barrier in flexible CIGS solar cells based on SS foil. In addition, the XRD and SEM results showed that the AlN film did not influence the crystal structure of the Mo film which was deposited upon the AlN layer and used as the electrical contact in CIGS solar cells. It was found that the AlN film contributed to an improved crystallinity of the Mo contact layer compared to the bare SS foil. The combined results of secondary ion mass spectrometry, I–V and EQE measurements of the corresponding flexible CIGS solar cells confirmed that 1 μm-thick AlN film could be used as an efficient barrier layer in CIGS solar cells on SS foil.

  10. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  11. Inkjet printed Cu(In,Ga)S{sub 2} nanoparticles for low-cost solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Barbé, Jérémy, E-mail: jeremy.barbe@kaust.edu.sa; Eid, Jessica [King Abdullah University of Science and Technology, Solar and Photovoltaics Engineering Research Center (SPERC), Division of Physical Sciences and Engineering (Saudi Arabia); Ahlswede, Erik; Spiering, Stefanie; Powalla, Michael [Zentrum fur Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW) (Germany); Agrawal, Rakesh [Purdue University, School of Chemical Engineering (United States); Del Gobbo, Silvano, E-mail: silvano.delgobbo@gmail.com [King Abdullah University of Science and Technology, Solar and Photovoltaics Engineering Research Center (SPERC), Division of Physical Sciences and Engineering (Saudi Arabia)

    2016-12-15

    Cu(In,Ga)Se{sub 2} (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S{sub 2} (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

  12. Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

    KAUST Repository

    Barbe, Jeremy

    2016-12-13

    Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

  13. Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

    Science.gov (United States)

    Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

    2014-10-01

    Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

  14. Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

    Science.gov (United States)

    Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

    2014-01-01

    Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

  15. Substrate temperature optimization for Cu(In, Ga)Se{sub 2} solar cells on flexible stainless steels

    Energy Technology Data Exchange (ETDEWEB)

    Liang, X.; Zhu, H.; Chen, J., E-mail: chenjingwei@126.com; Zhou, D.; Zhang, C.; Guo, Y.; Niu, X.; Li, Z.; Mai, Y., E-mail: yaohuamai@hbu.edu.cn

    2016-04-15

    Graphical abstract: - Highlights: • CIGS thin films are deposited on flexible SS substrates at different substrate temperatures. • CIGS thin films deposited at different T{sub S2} show different Ga/(Ga + In) ratio profiles. • All CIGS thin films show (112) and (220/204) preferred orientations with a shift to higher angles. • Conversion efficiency of 11.3% is obtained for CIGS solar cells deposited at 500 °C. - Abstract: Cu(In, Ga)Se{sub 2} (CIGS) thin films are deposited on flexible stainless steel (SS) substrates using the so called 3-stage co-evaporation process at different substrate temperatures ranging from 440 °C to 640 °C during the 2nd stage and the 3rd stage (T{sub S2}). The effects of T{sub S2} on the properties of CIGS thin films are systematically investigated. It is found by secondary ion mass spectrometry measurement that CIGS thin films deposited at different T{sub S2} show different Ga/(Ga + In) ratio (GGI) profiles along the growth direction. High T{sub S2} facilitates the grain growth and leads to larger grain size. However, high T{sub S2} worsens the spectral response of CIGS solar cells in the long wavelength range, which is partly attributed to the too much iron atom diffusion from the SS substrates into the CIGS thin films. All CIGS thin films show (112) preferred orientations with a shift to higher angle due to variation of compositions. A shoulder-like two-peak structure of (112) and (220/204) peaks appears for CIGS thin films deposited at lower T{sub S2}. Conversion efficiency of 11.3% is obtained for CIGS thin film solar cells deposited at the T{sub S2} of 500 °C.

  16. Alternative bufferlayers for CIGS solarcells

    Energy Technology Data Exchange (ETDEWEB)

    Beleanu, A.; Gruhn, T.; Blum, C.G.F.; Balke, B.; Felser, C. [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, Mainz (Germany)

    2010-07-01

    Cadmium sulfide is a highly efficient buffer layer material in Cu(In,Ga)(S,Se2)[CIGS] solar devices, but for environmental reasons and possible gains in efficiency there is a great interest in replacing CdS by a cadmium-free alternative buffer layer. Using standard density functional theory (DFT) methods possible candidates like LiZnP and LiCuS have been proposed as alternative buffer layers. The experimental verification of the DFT results was quite challenging due to the fact that LiCuS was an unknow and completely new material. In a first step, we tried to synthesize LiCuS through solid state reactions in a corund crucible. After optimizing the parameters and successfully synthesizing the material its properties were investigated. In a second step, huge amounts of LiCuS and LiZnP were synthesized and pressed using Spark Plasma Sintering as 3 inch targets. LiCuS and LiZnP films were grown by radio-frequency magnetron sputtering from these target and their properties as an alternative buffer layer in CIGS solar cells were investigated. The 1:1:1 stoichiometry of the films was delivered from in-situ XPS measurements. Absorption measurements show a band gap of {approx}2.0 eV which is in good agreement with the theoretical estimates.

  17. High efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  18. Application of Thin Film Photovoltaic CIGS Cells to Extend the Endurance of Small Unmanned Aerial Systems

    Science.gov (United States)

    2017-06-01

    Source: [10]. ............................................................10  Figure 4.  IV Curve Example at Different Solar Intensity . Adapted from [2...research will show the growing capability and efficiency of using TFPV cells. Figure 4. IV Curve Example at Different Solar Intensity . Adapted from [2...tests were conducted to determine the power output. To determine the power output, we measured the electrical characteristics and solar efficiency

  19. Characterization of Damp-Heat Degradation of CuInGaSe2 Solar Cell Components and Devices by (Electrochemical) Impedance Spectroscopy: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Pern, F. J. J.; Noufi, R.

    2011-09-01

    This work evaluated the capability of (electrochemical) impedance spectroscopy (IS, or ECIS as used here) to monitor damp heat (DH) stability of contact materials, CuInGaSe2 (CIGS) solar cell components, and devices. Cell characteristics and its variation of the CIGS devices were also examined by the ECIS.

  20. Improving efficiency (optimization) of CIGS thin film solar cell using ...

    African Journals Online (AJOL)

    Jsc ,Voc , FF and Quantum efficiency (QE) decrease due to absorption of electrons of electrons to the surface of back connection and their participation in recomposition. Efficiency increases from 20.3399% to 21.3721% by increasing impurity density of absorbent layer and efficiency increases to 28.9266% and the quantum ...

  1. Spatial atmospheric ALD of functional layers for CIGS Solar Cells

    NARCIS (Netherlands)

    Illiberi, A.; Frijters, C.; Balder, J. E.; Poodt, P.; Roozeboom, F.

    2015-01-01

    Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of

  2. Spatial atmospheric ALD of functional layers for CIGS Solar Cells

    NARCIS (Netherlands)

    Illiberi, A.; Frijters, C.; Balder, J.E.; Poodt, P.W.G.; Roozeboom, F.

    2015-01-01

    Spatial Atmosperic Atomic Layer Depositon combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rages (up tot nm/s). In this paper we present a short overview of our research acctivity carried out on S-ALD of

  3. Scale-up issues of CIGS thin film PV modules

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922 (United States)

    2011-01-15

    Photovoltaics cost has been declining following a 70% learning curve. Now the challenge is to bring down the cost of solar electricity to make it competitive with conventional sources within the next decade. In the long run, the module efficiencies tend to reach 80% of the champion cell efficiencies. Using a semiempirical methodology, it has been shown earlier that while the triple junction a-Si:H thin film technology is competitive, CIGS and CdTe thin film module technologies are highly competitive and presently offer the best approach for significantly exceeding the cost/performance levels of standard and non-standard crystalline Si PV technologies. Since 2006, the production of thin film solar cell in the U.S. has surpassed that of c-Si. At present, the production of CIGS PV modules lags considerably behind that of CdTe PV modules. This is mainly because of its complexity. Scale-up issues related to various CIGS preparation technologies such as co-evaporation, metallic precursor deposition by magnetron sputtering and non-vacuum techniques such as ink-jet printing, electroplating or doctor-blade technology followed by their selenization/sulfurization are discussed so as to assist the CIGS technology to attain its full potential. Besides the welcome announcements of large volume production, it is essential to achieve the production cost below $1/Wp in the near term and attain production speeds comparable to CdTe production speeds. Comparable production speeds are expected to be achieved within the next decade. This will enable reduction of CIGS module production costs to {proportional_to}65 cents /Wp that would be comparable to the CdTe module projected production cost. Additionally CIGS will have a higher efficiency premium. (author)

  4. Solar cells

    International Nuclear Information System (INIS)

    1980-01-01

    A method of producing solar cells is described which consists of producing a substantially monocrystalline tubular body of silicon or other suitable semiconductor material, treating this body to form an annular rectifying junction and then cutting it longitudinally to form a number of nearly flat ribbons from which the solar cells are fabricated. The P=N rectifying junction produced by the formation of silicon dioxide on the layers at the inner and outer surfaces of the body can be formed by ion-implantation or diffusion. (U.K.)

  5. Photoluminescence of Cu(In,Ga)Se2 in the solar cell preparation process

    International Nuclear Information System (INIS)

    Sho, Shirakata; Shinji, Yudate; Jyunji, Honda; Naoki, Iwado

    2010-01-01

    Full text : Sequential step by step photoluminescence (PL) measurements have been carried out on Cu(In,Ga)Se 2 (CIGS) films just after each thin-film processes for the fabrication of the CIGS solar cell. These include, (i) the CIGS film deposition on the Mo-coated soda-lime glass substrate by three-stage method (CIGS/Mo/SLG), (ii) the chemical-bath deposition (CBD) of CdS buffer layer, (iii) deposition of undoped ZnO window layer by RF sputtering, (iv) deposition of Al doped ZnO high-conductive window layer by RF sputtering, (v) Al grid electrode deposition for the CIGS solar cell, and (vi) the mechanical scribing for the electrical isolation of small test cells. Roomtemperature PL measurements have been done with the excitation of a He-Ne laser (632.8 nm, 1 mW) focused on the sample surface to 0.2 mm diameter. PL was dispersed by a polycromator (Horiba: MicroHR) and detected by a cooled InGaAs multichannel detector (1024 pixels). In order to study the uniformity of PL within CIGS films, the two dimensional PL spectrum mapping measurement has been done (0.4-0.6 mm step) using an x-y stage operating in the raster scanning mode. Acquisition time of one PL spectrum was 1 s. Once the fresh CIGS film is exposed to the air, intensity of the near-band-edge PL decreases slowly with time. After few days, PL intensity was one order of magnitude weaker than its initial value. Thus, PL measurement was performed just after the deposition. It was shown that PL spectra of CIGS films taken for each process in the CIGS solar cell preparation. PL of the CIGS film exhibited nearband-edge peak at 1.18 eV. The slight increase of PL intensity was observed after depositions of CdS and ZnO films. After the high conductive ZnO:Al deposition, PL intensity decreases to one third of the initial PL intensity of the fresh CIGS film. No change has been observed with respect to the line shape of PL peaks during the process. In the CIGS solar cell (open circuit condition), PL intensity recovers

  6. Ionization effects on Cu(In, Ga)Se{sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Shirou; Imaizumi, Mitsuru [Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0031 (Japan); Ishizuka, Shogo; Shibata, Hajime [Institute of National Advanced Industrial Science and Technology, 1-1 Umezono, Tsukuba 305-8568 (Japan); Okuda, Shuichi [Osaka Prefecture University, 1-2 Gakuenmachi, Sakai 599-8570 (Japan)

    2017-06-15

    Cu (In, Ga) Se{sub 2} (CIGS) solar cells were irradiated with 60, 100, and 250 keV electrons to reveal the characteristics of radiation induced defects. Electrons with less than 200 keV energy cannot generate any displacement defects in CIGS materials. In addition, a low amount of the electrons can improve the roll-over behavior in current-voltage characteristics of CIGS solar cells. However, the deterioration of the electrical performance in CIGS solar cells irradiated with a high amount of electrons was observed. The deterioration rate on the cells irradiated with lower-energy electrons was higher than that induced by electrons with higher-energy. The degradation curve of J{sub SC} based on the ionizing dose estimated from the ionizing energy loss model does not depend on the energy of electrons. Therefore, it implies that the electrons can degrade CIGS solar cells due to the ionization effect. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Investigation of the effect of potassium on Cu(In,Ga)Se{sub 2} layers and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Laemmle, A., E-mail: anke.laemmle@zsw-bw.de; Wuerz, R.; Powalla, M.

    2015-05-01

    We investigate the influence of potassium (K) on the Cu(In,Ga)Se{sub 2} (CIGS) growth kinetics on alkali-free alumina substrates and the electrical parameters of the CIGS solar cell by intentional K doping of the CIGS layer by a KF-precursor layer and KF-post deposition treatment (PDT). Secondary ion mass spectroscopy measurements revealed that K can be incorporated into the CIGS layer by both processes. The CIGS composition of the KF-precursor sample shows a stronger [Ga]/([Ga] + [In]) (GGI) profile. By analysing the samples with scanning electron microscopy we observed smaller CIGS grains for the KF-precursor sample compared to the K-free reference and KF-PDT sample. jV-measurements of the KF-PDT and the KF-precursor sample show an increase in the cell efficiency η from 10.7% to 13.6% and 13.7%, respectively, compared to the K-free reference sample. The external quantum efficiency measurements of the KF-precursor sample show an increased absorption in the infrared region. Capacitance-voltage measurements reveal an increase in the net doping concentration of both samples treated with K. We assume that the enhancement is caused by passivation of grain boundaries and donor-like defects by K, as previously demonstrated for Na. - Highlights: • K-doped Cu(In,Ga)Se{sub 2} (CIGS) layers from KF-precursor and KF-post deposition treatment • Separation of the K-effect from the Na-effect by using alkali-free substrates • Interdiffusion of CIGS elements during CIGS growth is hindered by K • KF-precursor leads to smaller CIGS grains and a stronger Cu depletion at the CIGS surface. • K leads to an increase in the conversion efficiency.

  8. Ultrafast pump-probe reflectance spectroscopy: Why sodium makes Cu(In,Ga)Se2 solar cells better

    KAUST Repository

    Eid, Jessica; Usman, Anwar; Gereige, Issam; Duren, Jeroen Van; Lyssenko, Vadim; Leo, Karl; Mohammed, Omar F.

    2015-01-01

    Although Cu(In,Ga)Se2 (CIGS) solar cells have the highest efficiency of any thin-film solar cell, especially when sodium is incorporated, the fundamental device properties of ultrafast carrier transport and recombination in such cells remain not fully understood. Here, we explore the dynamics of charge carriers in CIGS absorber layers with varying concentrations of Na by femtosecond (fs) broadband pump-probe reflectance spectroscopy with 120 fs time resolution. By analyzing the time-resolved transient spectra in a different time domain, we show that a small amount of Na integrated by NaF deposition on top of sputtered Cu(In,Ga) prior to selenization forms CIGS, which induces slower recombination of the excited carriers. Here, we provide direct evidence for the elongation of carrier lifetimes by incorporating Na into CIGS.

  9. Ultrafast pump-probe reflectance spectroscopy: Why sodium makes Cu(In,Ga)Se2 solar cells better

    KAUST Repository

    Eid, Jessica

    2015-04-14

    Although Cu(In,Ga)Se2 (CIGS) solar cells have the highest efficiency of any thin-film solar cell, especially when sodium is incorporated, the fundamental device properties of ultrafast carrier transport and recombination in such cells remain not fully understood. Here, we explore the dynamics of charge carriers in CIGS absorber layers with varying concentrations of Na by femtosecond (fs) broadband pump-probe reflectance spectroscopy with 120 fs time resolution. By analyzing the time-resolved transient spectra in a different time domain, we show that a small amount of Na integrated by NaF deposition on top of sputtered Cu(In,Ga) prior to selenization forms CIGS, which induces slower recombination of the excited carriers. Here, we provide direct evidence for the elongation of carrier lifetimes by incorporating Na into CIGS.

  10. CuIn{sub 1-x}Ga{sub x}Se{sub 2} photovoltaic devices for tandem solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Seyrling, S. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland)], E-mail: seyrling@phys.ethz.ch; Calnan, S. [Department of Electronic and Electrical Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Buecheler, S. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Huepkes, J. [Institut fuer Energieforschung, Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Wenger, S. [Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, School of Basic Sciences, EPF Lausanne, 1015 Lausanne (Switzerland); Bremaud, D.; Zogg, H. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Tiwari, A.N. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Department of Electronic and Electrical Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2009-02-02

    CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) solar cells show a good spectral response in a wide range of the solar spectrum and the bandgap of CIGS can be adjusted from 1.0 eV to 1.7 eV by increasing the gallium-to-indium ratio of the absorber. While the bandgaps of Ga-rich CIGS or CGS devices make them suitable for top or intermediate cells, the In rich CIGS or CIS devices are well suited to be used as bottom cells in tandem solar cells. The photocurrent can be adapted to the desired value for current matching in tandem cells by changing the composition of CIGS which influences the absorption characteristics. Therefore, CIGS layers with different [Ga]/[In + Ga] ratios were grown on Mo and ZnO:Al coated glass substrates. The grain size, composition of the layers, and morphology strongly depend on the Ga content. Layers with Ga rich composition exhibit smaller grain size and poor photovoltaic performance. The current densities of CIGS solar cells on ZnO:Al/glass varied from 29 mA cm{sup -2} to 13 mA cm{sup -2} depending on the Ga content, and 13.5% efficient cells were achieved using a low temperature process (450 deg. C ). However, Ga-rich solar cells exhibit lower transmission than dye sensitized solar cells (DSC). Prospects of tandem solar cells combining a DSC with CIGS are presented.

  11. Optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, Y.; Warasawa, M. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Takakura, K. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Kimura, S. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, S.F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Ohyama, H. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Sugiyama, M., E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

    2011-08-31

    The optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 x 10{sup 18} cm{sup -2}. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing J{sub SC} and increasing R{sub s} reflected the influence of irradiated ZnO:Al, and decreasing V{sub OC} and increasing R{sub sh} mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.

  12. The influence of Na on metastable defect kinetics in CIGS materials

    International Nuclear Information System (INIS)

    Erslev, Peter T.; Lee, Jin Woo; Shafarman, William N.; Cohen, J. David

    2009-01-01

    The electronic properties of matched pairs of Cu(In x Ga 1-x )Se 2 (CIGS) solar cells, with and without normal sodium levels, were studied by junction capacitance methods including admittance spectroscopy, drive level capacitance profiling (DLCP) and transient photocapacitance spectroscopy (TPC). The capacitance profiling measurements revealed a large deep defect density in the vicinity of the barrier interface that was likely responsible for the lower performance of the reduced Na samples. The metastable properties of CIGS solar cells were also examined, and these revealed marked differences between the two types of samples. These results directly address the predictions of theoretical microscopic models that have been proposed to account for metastable effects in CIGS

  13. Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

    International Nuclear Information System (INIS)

    Cho, Dae-Hyung; Chung, Yong-Duck; Lee, Kyu-Seok; Park, Nae-Man; Kim, Kyung-Hyun; Choi, Hae-Won; Kim, Jeha

    2012-01-01

    We have studied the influence of growth temperature (T G ) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T G . For a T G ≤ 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p–n interface of the device was found to become deteriorated severely at T G > 200 °C. CIGS solar cells with ITO deposited at T G = 200 °C showed the best performance in terms of efficiency.

  14. Thin film solar cell technology in Germany

    International Nuclear Information System (INIS)

    Diehl, W.; Sittinger, V.; Szyszka, B.

    2005-01-01

    Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)

  15. CIG-DB: the database for human or mouse immunoglobulin and T cell receptor genes available for cancer studies

    Directory of Open Access Journals (Sweden)

    Furue Motoki

    2010-07-01

    Full Text Available Abstract Background Immunoglobulin (IG or antibody and the T-cell receptor (TR are pivotal proteins in the immune system of higher organisms. In cancer immunotherapy, the immune responses mediated by tumor-epitope-binding IG or TR play important roles in anticancer effects. Although there are public databases specific for immunological genes, their contents have not been associated with clinical studies. Therefore, we developed an integrated database of IG/TR data reported in cancer studies (the Cancer-related Immunological Gene Database [CIG-DB]. Description This database is designed as a platform to explore public human and murine IG/TR genes sequenced in cancer studies. A total of 38,308 annotation entries for IG/TR proteins were collected from GenBank/DDBJ/EMBL and the Protein Data Bank, and 2,740 non-redundant corresponding MEDLINE references were appended. Next, we filtered the MEDLINE texts by MeSH terms, titles, and abstracts containing keywords related to cancer. After we performed a manual check, we classified the protein entries into two groups: 611 on cancer therapy (Group I and 1,470 on hematological tumors (Group II. Thus, a total of 2,081 cancer-related IG and TR entries were tabularized. To effectively classify future entries, we developed a computational method based on text mining and canonical discriminant analysis by parsing MeSH/title/abstract words. We performed a leave-one-out cross validation for the method, which showed high accuracy rates: 94.6% for IG references and 94.7% for TR references. We also collected 920 epitope sequences bound with IG/TR. The CIG-DB is equipped with search engines for amino acid sequences and MEDLINE references, sequence analysis tools, and a 3D viewer. This database is accessible without charge or registration at http://www.scchr-cigdb.jp/, and the search results are freely downloadable. Conclusions The CIG-DB serves as a bridge between immunological gene data and cancer studies, presenting

  16. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    International Nuclear Information System (INIS)

    Eisenberg, Daniel A.; Yu, Mengjing; Lam, Carl W.; Ogunseitan, Oladele A.; Schoenung, Julie M.

    2013-01-01

    Highlights: • Comparative alternatives assessment of thin film manufacturing technologies. • Development of chemical alternatives assessment in a life cycle context. • Screening of manufacturing and solar cell hazardous substances simultaneously. -- Abstract: Copper–indium–gallium–selenium–sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals™ and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS 2 p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane

  17. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Eisenberg, Daniel A.; Yu, Mengjing; Lam, Carl W. [University of California, Davis, 1 Shields Avenue, Davis, CA 95616 (United States); Ogunseitan, Oladele A. [University of California, Irvine, Irvine, CA 92697 (United States); Schoenung, Julie M., E-mail: jmschoenung@ucdavis.edu [University of California, Davis, 1 Shields Avenue, Davis, CA 95616 (United States)

    2013-09-15

    Highlights: • Comparative alternatives assessment of thin film manufacturing technologies. • Development of chemical alternatives assessment in a life cycle context. • Screening of manufacturing and solar cell hazardous substances simultaneously. -- Abstract: Copper–indium–gallium–selenium–sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals™ and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS{sub 2} p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane.

  18. Fabrication and Characterization of Thin Film Solar Cell Made from CuIn0.75Ga0.25S2 Wurtzite Nanoparticles

    Directory of Open Access Journals (Sweden)

    Fengyan Zhang

    2013-01-01

    Full Text Available CuIn0.75Ga0.25S2 (CIGS thin film solar cells have been successfully fabricated using CIGS Wurtzite phase nanoparticles for the first time. The structure of the cell is Glass/Mo/CIGS/CdS/ZnO/ZnO:Al/Ag. The light absorption layer is made from CIGS Wurtzite phase nanoparticles that are formed from single-source precursors through a microwave irradiation. The Wurtzite phase nanoparticles were converted to Chalcopyrite phase film through a single-step annealing process in the presence of argon and sulfur at 450°C. The solar cell made from Wurtzite phase nanoparticles showed 1.6% efficiency and 0.42 fill factor.

  19. Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

    International Nuclear Information System (INIS)

    Zachmann, H.; Puttnins, S.; Daume, F.; Rahm, A.; Otte, K.

    2011-01-01

    Thin films of Cu(In,Ga)Se 2 (CIGS) absorber layers for thin film solar cells have been manufactured on polyimide foil in a low temperature, ion beam assisted co-evaporation process. In the present work a set of CIGS thin films was produced with varying selenium ion energy. Solar cell devices have been manufactured from the films and characterized via admittance spectroscopy and capacitance-voltage profiling to determine the influence of the selenium ion energy on the electric parameters of the solar cells. It is shown that the impact of energetic selenium ions in the CIGS deposition process leads to a change in the activation energy and defect density and also in the spatial distribution of electrically active defects. For the interpretation of the results two defect models are taken into account.

  20. Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

    Directory of Open Access Journals (Sweden)

    Udai P. Singh

    2010-01-01

    Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

  1. Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

    KAUST Repository

    Barbe, Jeremy; Eid, Jessica; Ahlswede, Erik; Spiering, Stefanie; Powalla, Michael; Agrawal, Rakesh; Del Gobbo, Silvano

    2016-01-01

    Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning

  2. Deep absorption band in Cu(In,Ga)Se{sub 2} thin films and solar cells observed by transparent piezoelectric photothermal spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shirakata, Sho; Atarashi, Akiko [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Yagi, Masakazu [Kagawa National College of Technology, Mitoyo-shi 769-1192 (Japan)

    2015-06-15

    The photo-acoustic spectroscopy (PAS) using a transparent piezoelectric photo-thermal (Tr-PPT) method was carried out on Cu(In,Ga)Se{sub 2} (CIGS) thin films (both CIGS/Mo/SLG and CdS/CIGS/Mo/SLG) and solar cells (ZnO/CdS/CIGS/Mo/SLG). Using the Tr-PPT method, the high background absorption in the below gap region observed in both a microphone and a conventional transducer PAS spectra was strongly reduced. This high background absorption came from the CIGS/Mo interface. This result proves that the Tr-PPT PAS is the surface sensitive method. In the below-band region, a bell-shape deep absorption band has been observed at 0.76 eV, in which a full-width at the half-maximum value was 70-120 meV. This deep absorption band was observed for both CdS/CIGS/Mo/SLG and ZnO/CdS/CIGS/Mo/SLG structures. The peak energy of the absorption band was independent of the alloy composition for 0.25≤Ga/III≤0.58. Intensity of the PA signal was negatively correlated to the Na concentration at the CIGS film surface. The origin of the 0.76 eV peak is discussed with relation to native defects such as a Cu-vacancy-related defect (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. DEGRADATION OF SOLAR CELLS PARAMETERS FABRICATED ON THE BASIS OF Cu(In,GaSe2 SEMICONDUCTOR SOLID SOLUTIONS UNDER ELECTRON IRRADIATION

    Directory of Open Access Journals (Sweden)

    A. V. Mudryi

    2014-01-01

    Full Text Available Polycrystalline Cu(In,GaSe2 (CIGS thin films were grown on molybdenum-coated soda-lime glass substrates by co-evaporation of the elements Cu, In, Ga and Se from independent sources. The effect of electron irradiation on the electrical and optical properties of CIGS thin films and solar cells with the structure ZnO:Al/i-ZnO/CdS/CIGS/Mo/glass was studied. It was found that the degradation of the electrical parameters of solar cells (open-circuit voltage, short-circuit current density and efficiency took place due to the formation of radiation defects (recombination centers with deep energy levels in the bandgap of CIGS. It was revealed that after electron irradiation intensity of near band-edge luminescence band at about 1,1 eV decreased considerably and bands of luminescence with maxima at 0,93 and 0,75 eV appeared.

  4. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics.

    Science.gov (United States)

    Eisenberg, Daniel A; Yu, Mengjing; Lam, Carl W; Ogunseitan, Oladele A; Schoenung, Julie M

    2013-09-15

    Copper-indium-gallium-selenium-sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS₂ p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane. Copyright © 2013 Elsevier B.V. All rights reserved.

  5. Band gap grading and photovoltaic performance of solution-processed Cu(In,Ga)S2 thin-film solar cells.

    Science.gov (United States)

    Sohn, So Hyeong; Han, Noh Soo; Park, Yong Jin; Park, Seung Min; An, Hee Sang; Kim, Dong-Wook; Min, Byoung Koun; Song, Jae Kyu

    2014-12-28

    The photophysical properties of CuInxGa1-xS2 (CIGS) thin films, prepared by solution-based coating methods, are investigated to understand the correlation between the optical properties of these films and the electrical characteristics of solar cells fabricated using these films. Photophysical properties, such as the depth-dependent band gap and carrier lifetime, turn out to be at play in determining the energy conversion efficiency of solar cells. A double grading of the band gap in CIGS films enhances solar cell efficiency, even when defect states disturb carrier collection by non-radiative decay. The combinational stacking of different density films leads to improved solar cell performance as well as efficient fabrication because a graded band gap and reduced shunt current increase carrier collection efficiency. The photodynamics of minority-carriers suggests that the suppression of defect states is a primary area of improvement in CIGS thin films prepared by solution-based methods.

  6. Full space device optimization for solar cells.

    Science.gov (United States)

    Baloch, Ahmer A B; Aly, Shahzada P; Hossain, Mohammad I; El-Mellouhi, Fedwa; Tabet, Nouar; Alharbi, Fahhad H

    2017-09-20

    Advances in computational materials have paved a way to design efficient solar cells by identifying the optimal properties of the device layers. Conventionally, the device optimization has been governed by single or double descriptors for an individual layer; mostly the absorbing layer. However, the performance of the device depends collectively on all the properties of the material and the geometry of each layer in the cell. To address this issue of multi-property optimization and to avoid the paradigm of reoccurring materials in the solar cell field, a full space material-independent optimization approach is developed and presented in this paper. The method is employed to obtain an optimized material data set for maximum efficiency and for targeted functionality for each layer. To ensure the robustness of the method, two cases are studied; namely perovskite solar cells device optimization and cadmium-free CIGS solar cell. The implementation determines the desirable optoelectronic properties of transport mediums and contacts that can maximize the efficiency for both cases. The resulted data sets of material properties can be matched with those in materials databases or by further microscopic material design. Moreover, the presented multi-property optimization framework can be extended to design any solid-state device.

  7. Introduction to solar cell production

    International Nuclear Information System (INIS)

    Kim, Gyeong Hae; Lee, Jun Sin

    2009-08-01

    This book introduces solar cell production. It is made up eight chapters, which are summary of solar cell with structure and prospect of the business, special variable of solar cell on light of the sun and factor causing variable of solar cell, production of solar cell with surface texturing, diffusion, metal printing dry and firing and edge isolation, process of solar cell on silicone wafer for solar cell, forming of electrodes, introduction of thin film solar cell on operating of solar cell, process of production and high efficiency of thin film solar cell, sorting of solar cell and production with background of silicone solar cell and thin film solar cell, structure and production of thin film solar cell and compound solar cell, introduction of solar cell module and the Industrial condition and prospect of solar cell.

  8. Device Modeling of the Performance of Cu(In,GaSe2 Solar Cells with V-Shaped Bandgap Profiles

    Directory of Open Access Journals (Sweden)

    Shou-Yi Kuo

    2014-01-01

    Full Text Available The effect of Cu(In,GaSe2 (CIGS with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.

  9. Influence of encapsulated electron active molecules of single walled-carbon nanotubes on superstrate-type Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jungwoo [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); CRD Laboratory, LG Chem. Research Park, Daejeon 305-738 (Korea, Republic of); Lee, Wonjoo [Department of Defense Ammunitions, Daeduk College, Daejeon 305-715 (Korea, Republic of); Shrestha, Nabeen K.; Lee, Deok Yeon; Lim, Iseul [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); Kang, Soon Hyung [Department of Chemistry Education, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Nah, Yoon-Chae [School of Energy, Materials, and Chemical Engineering, Korea University of Technology and Education, Cheonan 330-708 (Korea, Republic of); Lee, Soo-Hyoung, E-mail: shlee66@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Yi, Whikun, E-mail: wkyi@hanyang.ac.kr [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); Han, Sung-Hwan, E-mail: shhan@hanyang.ac.kr [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-03-01

    Chemical functionalization of carbon nanotubes (CNTs) can strongly affect the efficiency of solar cells due to change of three factors viz. electronic energy structures, interfacial resistance, and electrical field. Therefore, it is worthwhile to investigate the influence of these three factors on the solar cells based on the functionalization of various active molecules in CNTs. In the present study, we investigate the influence of the three factors in the efficiency of superstrate-type Cu(In,Ga)Se{sub 2} (CIGS) solar cells [i.e. F-doped SnO{sub 2}/CNTs/CdS/CIGS/Au] by encapsulation of electron withdrawing and donating organic molecules inside CNTs. The CIGS solar cell was characterized using the electronic diagram, electrochemical impendence spectroscopy, reverse field emission currents, and currents–voltages curves. - Highlights: • We investigated the three effects of CNTs in superstrate-type CIGS solar cells. • Chemical functionalization of CNTs strongly affect the efficiency of solar cells. • The electrical field of solar cell was characterized using the reverse FE-currents.

  10. Nanostructured Organic Solar Cells

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Rubahn, Horst-Günter; Madsen, Morten

    Recent forecasts for alternative energy generation predict emerging importance of supporting state of art photovoltaic solar cells with their organic equivalents. Despite their significantly lower efficiency, number of application niches are suitable for organic solar cells. This work reveals...... the principles of bulk heterojunction organic solar cells fabrication as well as summarises major differences in physics of their operation....

  11. Solar Photovoltaic Cells.

    Science.gov (United States)

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  12. Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Warasawa, Moe [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Kaijo, Akira [Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, 229-0293 (Japan); Sugiyama, Mutsumi, E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

    2012-01-01

    The advantages of using indium zinc oxide (IZO) films instead of conventional Ga-doped zinc oxide (ZnO:Ga) films for Cu(In,Ga)Se{sub 2} (CIGS) solar cells are described. The electrical properties of IZO are independent of film thickness. IZO films have higher mobility (30-40 cm{sup 2}/Vs) and lower resistivity (4-5 Multiplication-Sign 10{sup -4} {Omega} cm) compared to ZnO:Ga films deposited without intentional heating, because the number of grain boundaries in amorphous IZO films is small. The properties of a CIGS solar cell using IZO at the window layer were better than those obtained using a conventional ZnO:Ga at the window layer; moreover, the properties tended to be independent of thickness. These results indicate that use of IZO as a transparent conducting oxide layer is expected to increase the efficiency of CIGS solar cells.

  13. Solar cell concentrating system

    International Nuclear Information System (INIS)

    Garg, H.P.; Sharma, V.K.; Agarwal, R.K.

    1986-11-01

    This study reviews fabrication techniques and testing facilities for different solar cells under concentration which have been developed and tested. It is also aimed to examine solar energy concentrators which are prospective candidates for photovoltaic concentrator systems. This may provide an impetus to the scientists working in the area of solar cell technology

  14. Site selective doping of Zn for the p-type Cu(In,Ga)Se{sub 2} thin film for solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Shirakata, Sho [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Tokyo University of Science, Research Institute for Science and Technology, Noda, Chiba 278-8510 (Japan)

    2017-06-15

    Selective doping of a Zn impurity at the group III site in a Cu(In, Ga)Se{sub 2} (CIGS) film was performed by the doping of Zn at the first stage of the three-stage method. The p-type CIGS:Zn film was obtained, which is in contrast to the n-type CIGS:Zn film obtained by the Zn impurity doping at the second and third-stages. Based on excitation intensity dependence of photoluminescence (PL) at low-temperature, the change in the acceptor level was observed. The enhancement of carrier concentration as a result of Zn-doping in the p-type CIGS:Zn film was observed. The CIGS:Zn solar cells exhibited η of 14.5% and V{sub oc} of 0.658 V, which are higher than that of the corresponding solar cells using the undoped CIGS films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Synthesis of Cu-Poor Copper-Indium-Gallium-Diselenide Nanoparticles by Solvothermal Route for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Chung Ping Liu

    2014-01-01

    Full Text Available Copper-indium-gallium-diselenide (CIGS thin films were fabricated using precursor nanoparticle ink and sintering technology. The precursor was a Cu-poor quaternary compound with constituent ratios of Cu/(In+Ga=0.603, Ga/(In+Ga=0.674, and Se/(Cu+In+Ga=1.036. Cu-poor CIGS nanoparticles of chalcopyrite for solar cells were successfully synthesized using a relatively simple and convenient elemental solvothermal route. After a fixed reaction time of 36 h at 180°C, CIGS nanocrystals with diameters in the range of 20–70 nm were observed. The nanoparticle ink was fabricated by mixing CIGS nanoparticles, a solvent, and an organic polymer. Analytical results reveal that the Cu-poor CIGS absorption layer prepared from a nanoparticle-ink polymer by sintering has a chalcopyrite structure and a favorable composition. For this kind of sample, its mole ratio of Cu : In : Ga : Se is equal to 0.617 : 0.410 : 0.510 : 2.464 and related ratios of Ga/(In+Ga and Cu/(In+Ga are 0.554 and 0.671, respectively. Under the condition of standard air mass 1.5 global illumination, the conversion efficiency of the solar cell fabricated by this kind of sample is 4.05%.

  16. Photovoltaic solar cell

    Science.gov (United States)

    Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

    2015-09-08

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  17. Obtaining Target for Solar Cells with Unconventional Supports

    Directory of Open Access Journals (Sweden)

    Mariana Buga

    2011-09-01

    Full Text Available The main technological aim is to develop experimental models of magnetron targets of CuInS2 and CuInSe2, controlled Ga doped in concentrations ranging between 7% and 17%. Advantage of using CuInS2 in manufacturing of solar cells is the presence of nontoxic sulfur. The optimum concentration of Ga determine surely the best crystalline phase of CuInS2 and results are an improvement of the absorbtion band and therefore an increase of quantum efficiency of the quaternary mixture – CIGS in double thin layer.

  18. Hydrazine-Free Solution-Deposited CuIn(S,Se)2 Solar Cells by Spray Deposition of Metal Chalcogenides.

    Science.gov (United States)

    Arnou, Panagiota; van Hest, Maikel F A M; Cooper, Carl S; Malkov, Andrei V; Walls, John M; Bowers, Jake W

    2016-05-18

    Solution processing of semiconductors, such as CuInSe2 and its alloys (CIGS), can significantly reduce the manufacturing costs of thin film solar cells. Despite the recent success of solution deposition approaches for CIGS, toxic reagents such as hydrazine are usually involved, which introduce health and safety concerns. Here, we present a simple and safer methodology for the preparation of high-quality CuIn(S, Se)2 absorbers from metal sulfide solutions in a diamine/dithiol mixture. The solutions are sprayed in air, using a chromatography atomizer, followed by a postdeposition selenization step. Two different selenization methods are explored resulting in power conversion efficiencies of up to 8%.

  19. Effect of sodium addition on Cu-deficient CuIn{sub 1-x}Ga{sub x}S{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vasekar, Parag S.; Dhere, Neelkanth G. [Florida Solar Energy Center, University of Central Florida, 1679 Clearlake Road, Cocoa, FL 32922 (United States)

    2009-01-15

    Chalcopyrites are important contenders among solar-cell materials due to direct band gap and very high-absorption coefficients. Copper-indium-gallium disulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of 1.5 eV for terrestrial as well as space applications. At FSEC PV Materials Laboratory, record efficiency of 11.99% has been achieved on a 2.7 {mu}m CIGS2 thin film prepared by sulfurization. There are reports of influence of sodium on copper-indium-gallium selenide (CIGS) as well as copper-indium disulfide (CIS2) solar cells. However, this is the first of its kind approach to study the effect of sodium on CIGS2 solar cells and resulting in encouraging efficiencies. Copper-deficient CIGS2 thin films were prepared with and without the addition of sodium fluoride (NaF). Effects of addition of NaF on the microstructure and device electrical properties are presented in this work. (author)

  20. Efficiency enhancement calculations of state-of-the-art solar cells by luminescent layers with spectral shifting, quantum cutting, and quantum tripling function

    NARCIS (Netherlands)

    Ten Kate, O.M.; De Jong, M.; Hintzen, H.T.; Van der Kolk, E.

    2013-01-01

    Solar cells of which the efficiency is not limited by the Shockley-Queisser limit can be obtained by integrating a luminescent spectral conversion layer into the cell structure. We have calculated the maximum efficiency of state-of-the-art c-Si, pc-Si, a-Si, CdTe, GaAs, CIS, CIGS, CGS, GaSb, and Ge

  1. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (CuInSe2 based PV cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (CuInSe2 taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CuInSe2 based PV cell in fiscal 1994. (1) On formation of high-quality CIGS thin films by bilayer method, Mo film was deposited on a glass substrate by sputtering, and CIGS film with different Ga/In ratios was next formed on the substrate by quaternary simultaneous deposition at different In and Ga deposition speeds. In addition, CdS film was deposited on the CIGS film, and ZnO and ITO films were finally deposited on it by sputtering to complete solar cell. This solar cell offered the maximum conversion efficiency among cells using CIGS film. (2) On formation of high-quality CIGS thin films by three-stage method, a certain correlation was found between substrate temperature and CIGS film composition by monitoring substrate temperature in film forming process. This phenomenon allowed rigorous control of CIS film compositions important for CIS thin film solar cells. (3) On low-cost process technology for thin film formation, Cu(In,Ga)S2 solid solution film was fabricated by expanded selenic process. 3 figs.

  2. Microstructural evolution of all-wet-processed CIGS films using Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hee Soo; Choi, Eunmi; Kim, Areum; Pyo, Sung Gyu [School of Integrative Engineering, Chung-Ang University, 221 Heukseok-Dong, Seoul, 156-756 (Korea, Republic of); Yoon, Sung Pil [Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of)

    2014-08-15

    We report a wet process deposition in order to identify a cost-effective processing scheme for CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) layers on molybdenum/soda lime glass substrates from a Cu-In-Ga precursor solution. We employed a spin coater at various settings to evaluate the uniformity of the resulting CIGS solar cell layer. After the CIGS precursor film was deposited, we applied a selenization process. In the selenization process, we used a controlled temperature RTA system and compared it to a noncontrolled temperature system. We investigated the morphological properties for different selenization temperature treatments. We used Raman mapping to detect binary compounds and found the binary compound effect on the film. Raman mapping results show that the density of the binary compound in the CIGS layer increased with selenization temperature, and at 600 C, the density of the binary compounds was highest. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Multilayer Transparent Top Electrode for Solution Processed Perovskite/Cu(In,Ga)(Se,S)2 Four Terminal Tandem Solar Cells.

    Science.gov (United States)

    Yang, Yang Michael; Chen, Qi; Hsieh, Yao-Tsung; Song, Tze-Bin; Marco, Nicholas De; Zhou, Huanping; Yang, Yang

    2015-07-28

    Halide perovskites (PVSK) have attracted much attention in recent years due to their high potential as a next generation solar cell material. To further improve perovskites progress toward a state-of-the-art technology, it is desirable to create a tandem structure in which perovskite may be stacked with a current prevailing solar cell such as silicon (Si) or Cu(In,Ga)(Se,S)2 (CIGS). The transparent top electrode is one of the key components as well as challenges to realize such tandem structure. Herein, we develop a multilayer transparent top electrode for perovskite photovoltaic devices delivering an 11.5% efficiency in top illumination mode. The transparent electrode is based on a dielectric/metal/dielectric structure, featuring an ultrathin gold seeded silver layer. A four terminal tandem solar cell employing solution processed CIGS and perovskite cells is also demonstrated with over 15% efficiency.

  4. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    Science.gov (United States)

    Bhattacharya, Raghu N [Littleton, CO

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  5. Relationship between open-circuit voltage in Cu(In,Ga)Se2 solar cell and peak position of (220/204) preferred orientation near its absorber surface

    International Nuclear Information System (INIS)

    Chantana, J.; Minemoto, T.; Watanabe, T.; Teraji, S.; Kawamura, K.

    2013-01-01

    Cu(In,Ga)Se 2 (CIGS) absorbers with various Ga/III, Ga/(In+Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. It is revealed that open-circuit voltage (V OC ) of CIGS solar cell is primarily dependent on averaged Ga/III near the surface of its absorber. This averaged Ga/III is well predicted by peak position of (220/204) preferred orientation of CIGS film near its surface investigated by glancing-incidence X-ray diffraction with 0.1° incident angle. Finally, the peak position of (220/204) preferred orientation is proposed as a measure of V OC before solar cell fabrication

  6. Degradation of Cu(In, Ga)Se{sub 2} thin-film solar cells due to the ionization effect of low-energy electrons

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Shirou, E-mail: kawakita.shirou@jaxa.jp [Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305-8505 (Japan); Imaizumi, Mitsuru [Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305-8505 (Japan); Ishizuka, Shogo; Shibata, Hajime; Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Okuda, Shuichi [Osaka Prefecture University (OPU), Sakai, Osaka 599-8570 (Japan); Kusawake, Hiroaki [Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305-8505 (Japan)

    2015-05-01

    Cu (In, Ga)Se{sub 2} (CIGS) solar cells were irradiated with 100 keV electrons to reveal the characteristics of created radiation defects. 100 keV electrons cannot produce any displacement defects in CIGS. Low-fluence electrons improve the electrical performance of the CIGS solar cells due to the change in the conductive type of donor to acceptor in a metastable defect, which is equivalent to the light-soaking effect. However, high fluence electrons cause the cell performance to decline. From analysis based on changes in carrier density and electroluminescence, defects causing the decline in performance include donor- and non-radiative types. In addition, red-on-bias experiments showed an increase in III{sub Cu} defects due to electron irradiation. Based on these results, the degradation in the electrical performance of the CIGS solar cells irradiated with high electron fluence would be attributable to a change in the conductive type of III{sub Cu} defects. - Highlights: • Cu(In,Ga)Se2 Solar cells were irradiated with 100 and 250 keV electrons at low temperature. • These electrons degraded the electrical performance of Cu(In,Ga)Se2 sola cells. • The electrons induced ⅢCu defects in Cu(In,Ga)Se2.

  7. Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing

    International Nuclear Information System (INIS)

    Van Delft, J A; Garcia-Alonso, D; Kessels, W M M

    2012-01-01

    Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures. These outstanding properties can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD for photovoltaics (PV) has attracted great interest in academic and industrial research in recent years. In this review, the recent progress of ALD layers applied to various solar cell concepts and their future prospects are discussed. Crystalline silicon (c-Si), copper indium gallium selenide (CIGS) and dye-sensitized solar cells (DSSCs) benefit from the application of ALD surface passivation layers, buffer layers and barrier layers, respectively. ALD films are also excellent moisture permeation barriers that have been successfully used to encapsulate flexible CIGS and organic photovoltaic (OPV) cells. Furthermore, some emerging applications of the ALD method in solar cell research are reviewed. The potential of ALD for solar cells manufacturing is discussed, and the current status of high-throughput ALD equipment development is presented. ALD is on the verge of being introduced in the PV industry and it is expected that it will be part of the standard solar cell manufacturing equipment in the near future. (paper)

  8. Rectenna solar cells

    CERN Document Server

    Moddel, Garret

    2013-01-01

    Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by e

  9. Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing.

    Science.gov (United States)

    Wi, Jae-Hyung; Kim, Tae Gun; Kim, Jeong Won; Lee, Woo-Jung; Cho, Dae-Hyung; Han, Won Seok; Chung, Yong-Duck

    2015-08-12

    We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

  10. A Comprehensive Study of One-Step Selenization Process for Cu(In1-x Ga x )Se2 Thin Film Solar Cells.

    Science.gov (United States)

    Chen, Shih-Chen; Wang, Sheng-Wen; Kuo, Shou-Yi; Juang, Jenh-Yih; Lee, Po-Tsung; Luo, Chih Wei; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2017-12-01

    In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn 1-x Ga x Se 2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H 2 Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe 2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.

  11. Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2 thin-film solar cells

    Science.gov (United States)

    Vilalta-Clemente, Arantxa; Raghuwanshi, Mohit; Duguay, Sébastien; Castro, Celia; Cadel, Emmanuel; Pareige, Philippe; Jackson, Philip; Wuerz, Roland; Hariskos, Dimitrios; Witte, Wolfram

    2018-03-01

    The introduction of a rubidium fluoride post deposition treatment (RbF-PDT) for Cu(In,Ga)Se2 (CIGS) absorber layers has led to a record efficiency up to 22.6% for thin-film solar cell technology. In the present work, high efficiency CIGS samples with RbF-PDT have been investigated by atom probe tomography (APT) to reveal the atomic distribution of all alkali elements present in CIGS layers and compared with non-treated samples. A Scanning Electron Microscopy Dual beam station (Focused Ion Beam-Gas Injection System) as well as Transmission Kikuchi diffraction is used for atom probe sample preparation and localization of the grain boundaries (GBs) in the area of interest. The analysis of the 3D atomic scale APT reconstructions of CIGS samples with RbF-PDT shows that inside grains, Rb is under the detection limit, but the Na concentration is enhanced as compared to the reference sample without Rb. At the GBs, a high concentration of Rb reaching 1.5 at. % was found, and Na and K (diffusing from the glass substrate) are also segregated at GBs but at lower concentrations as compared to Rb. The intentional introduction of Rb leads to significant changes in the chemical composition of CIGS matrix and at GBs, which might contribute to improve device efficiency.

  12. Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se{sub 2} solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Bae, Dowon, E-mail: bae.dowon@yahoo.co.kr; Gho, Junghwan; Shin, Minjung; Kwon, Sehan

    2013-05-01

    Cd{sub (1−x)}Zn{sub x}S (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se{sub 2} (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth. - Highlights: ► CdS:Zn buffer layers were fabricated for Cu(In,Ga)Se{sub 2} (CIGS) photovoltaic (PV) panels. ► Composition of buffer layers on indium–tin–oxide (ITO) and CIGS was investigated. ► Transmittance of CdS:Zn on ITO coated glass showed 5% higher than CdS. ► Efficiency of CdS:Zn solution adopted panels showed 0.47% higher than that with CdS. ► However, it was revealed that only Cd and S ions were found at the surface of CIGS.

  13. Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se2 solar cell

    International Nuclear Information System (INIS)

    Bae, Dowon; Gho, Junghwan; Shin, Minjung; Kwon, Sehan

    2013-01-01

    Cd (1−x) Zn x S (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se 2 (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth. - Highlights: ► CdS:Zn buffer layers were fabricated for Cu(In,Ga)Se 2 (CIGS) photovoltaic (PV) panels. ► Composition of buffer layers on indium–tin–oxide (ITO) and CIGS was investigated. ► Transmittance of CdS:Zn on ITO coated glass showed 5% higher than CdS. ► Efficiency of CdS:Zn solution adopted panels showed 0.47% higher than that with CdS. ► However, it was revealed that only Cd and S ions were found at the surface of CIGS

  14. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  15. Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Di Wei

    2010-03-01

    Full Text Available Dye sensitized solar cell (DSSC is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

  16. Solar cell radiation handbook

    Science.gov (United States)

    Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

    1982-01-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  17. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture next-generation thin film solar cells, development of technologies to manufacture CIS solar cell modules, development of technologies to increase high-quality film area; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Jisedai usumaku taiyo denchi module no seizo gijutsu kaihatsu, CIS taiyo denchi module no seizo gijutsu kaihatsu, kohinshitsumaku no daimensekika gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    With an objective to improve efficiency and reduce cost of CIS-based thin film solar cells, research and development has been made on technologies to increase high-quality CIS film area and technologies to increase speed in the manufacturing process. This paper describes the achievements attained during fiscal 1997. The research covered development of technologies to form high-grade Cu (In, Ga) Se{sub 2} (CIGS) film by using the multi-dimensional deposition process, component technologies for forming a rear electrode, a buffer layer and a transparent electrode, and patterning technologies. As a result of the research, thickness of the CIGS film was reduced to half as much as that of the conventional films, having achieved conversion efficiency of 13.1%, which corresponds to about 90% of the conventional CIGS solar cells. In addition, elucidation was made on the effect of an MoSe{sub 2} layer existing on interface with CIGS/Mo in a CIGS solar cell imposed on solar cell characteristics. In developing an Mo film laser scribing technology, intensity dependence of laser energy was made clear, the energy being required for scribing according to surface condition of the Mo film. (NEDO)

  18. Polymer tandem solar cells

    NARCIS (Netherlands)

    Gilot, J.

    2010-01-01

    Solar cells convert solar energy directly into electricity and are attractive contribute to the increasing energy demand of modern society. Commercial mono-crystalline silicon based devices are infiltrating the energy market but their expensive, time and energy consuming production process

  19. Copper-indium-gallium-diselenide nanoparticles synthesized by a solvothermal method for solar cell application

    Directory of Open Access Journals (Sweden)

    Chiou Chuan-Sheng

    2017-01-01

    Full Text Available Chalcopyrite copper-indium-gallium-diselenide (CIGS nanoparticles are useful for photovoltaic applications. In this study, the synthesis of CIGS powder was examined, and the powder was successfully synthesized using a relatively simple and convenient elemental solvothermal route. From the reactions of elemental Cu, In, Se and Ga(NO33 powders in an autoclave with ethylenediamine as a solvent, spherical CIGS nanoparticles, with diameters ranging from 20-40 nm, were obtained using a temperature of 200°C for 36h. The structure, morphology, chemical composition and optical properties of the as-synthesized CIGS were characterized using X-ray diffraction, transmission electron microscopy, selected area electron diffraction, scanning electron microscopy, inductively coupled plasma-mass spectrometry. In this sample, the mole ratio of Cu:In:Ga:Se was equal to 0.89:0.71:0.29:2.01, and the optical band gap was found to be 1.18 eV. The solar cell obtained a power conversion efficiency of 5.62% under standard air mass 1.5 global illumination.

  20. Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

    NARCIS (Netherlands)

    Frijters, C.H.; Poodt, P.; Illeberi, A.

    2016-01-01

    Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior

  1. 2D Finite Element Model of a CIGS Module

    Energy Technology Data Exchange (ETDEWEB)

    Janssen, G.J.M.; Slooff, L.H.; Bende, E.E. [ECN Solar Energy, P.O.Box 1, NL-1755 ZG Petten (Netherlands)

    2012-06-15

    The performance of thin-film CIGS (Copper indium gallium selenide) modules is often limited due to inhomogeneities in CIGS layers. A 2-dimensional Finite Element Model for CIGS modules is presented that predicts the impact of such inhomogeneities on the module performance. Results are presented of a module with a region of poor diode characteristics. It is concluded that according to this model the effects of poor diodes depend strongly on their location in the module and on their dispersion over the module surface. Due to its generic character the model can also be applied to other series connections of photovoltaic cells.

  2. 2D - Finite element model of a CIGS module

    Energy Technology Data Exchange (ETDEWEB)

    Janssen, G.J.M.; Slooff, L.H.; Bende, E.E. [ECN Solar Energy, Petten (Netherlands)

    2012-09-15

    The performance of thin-film CIGS modules is often limited due to inhomogeneities in CIGS layers. A 2-dimensional Finite Element Model for CIGS modules is demonstrated that predicts the impact of such inhomogeneities on the module performance. Results are presented of a module with a region of poor diode characteristics. It is concluded that according to this model the effects of poor diodes depend strongly on their location in the module and on their dispersion over the module surface. Due to its generic character the model can also be applied to other series connections of photovoltaic cells.

  3. Photovoltaic solar cell

    Science.gov (United States)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  4. Conjugated Polymer Solar Cells

    National Research Council Canada - National Science Library

    Paraschuk, Dmitry Y

    2006-01-01

    This report results from a contract tasking Moscow State University as follows: Conjugated polymers are promising materials for many photonics applications, in particular, for photovoltaic and solar cell devices...

  5. Antimony assisted low-temperature processing of CuIn{sub 1-x}Ga{sub x}Se{sub 2-y}S{sub y} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Min, Yuan [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Mitzi, David B., E-mail: dmitzi@us.ibm.co [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Gunawan, Oki [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Kellock, Andrew J [IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 (United States); Chey, S Jay [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Deline, Vaughn R [IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 (United States)

    2010-11-01

    Application of the Sb-doping method to low-temperature ({<=} 400 {sup o}C) processing of CuIn{sub 1-x}Ga{sub x}Se{sub 2-y}S{sub y} (CIGS) solar cells is explored, using a hydrazine-based approach to deposit the absorber films. Power conversion efficiencies of 10.5% and 8.4% have been achieved for CIGS devices (0.45 cm{sup 2} device area) processed at 400 {sup o}C and 360 {sup o}C, respectively, with an Sb-incorporation level at 1.2 mol % (relative to the moles of CIGS). Significant Sb-induced grain size enhancement was confirmed for these low processing temperatures using cross-sectional scanning electron microscopy, and an average 2-3% absolute efficiency improvement was achieved in Sb-doped samples compared to their Sb-free sister samples. With Sb inclusion, the CIGS film grain growth temperature is lowered to well below 450 {sup o}C, a range compatible with flexible polymer substrate materials such as polyimide. This method opens up access to opportunities in low-temperature processing of CIGS solar cells, an area that is being actively pursued using both traditional vacuum-based as well as other solution-based deposition techniques.

  6. Antimony assisted low-temperature processing of CuIn1-xGaxSe2-ySy solar cells

    International Nuclear Information System (INIS)

    Yuan Min; Mitzi, David B.; Gunawan, Oki; Kellock, Andrew J.; Chey, S. Jay; Deline, Vaughn R.

    2010-01-01

    Application of the Sb-doping method to low-temperature (≤ 400 o C) processing of CuIn 1-x Ga x Se 2-y S y (CIGS) solar cells is explored, using a hydrazine-based approach to deposit the absorber films. Power conversion efficiencies of 10.5% and 8.4% have been achieved for CIGS devices (0.45 cm 2 device area) processed at 400 o C and 360 o C, respectively, with an Sb-incorporation level at 1.2 mol % (relative to the moles of CIGS). Significant Sb-induced grain size enhancement was confirmed for these low processing temperatures using cross-sectional scanning electron microscopy, and an average 2-3% absolute efficiency improvement was achieved in Sb-doped samples compared to their Sb-free sister samples. With Sb inclusion, the CIGS film grain growth temperature is lowered to well below 450 o C, a range compatible with flexible polymer substrate materials such as polyimide. This method opens up access to opportunities in low-temperature processing of CIGS solar cells, an area that is being actively pursued using both traditional vacuum-based as well as other solution-based deposition techniques.

  7. Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

    KAUST Repository

    Alsaggaf, Ahmed; Alarousu, Erkki; Boulfrad, Samir; Rothenberger, Alexander

    2014-01-01

    by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying

  8. Nanocrystal Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Gur, Ilan [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  9. Iron sulphide solar cells

    Science.gov (United States)

    Ennaoui, A.; Tributsch, H.

    1984-12-01

    The abundant, naturally occurring natural compound pyrite (FeS2) can be used as a semiconducting material for photoelectrochemical and photovoltaic solar cells. Unlike most of the intensively studied photoactive materials, pyrite solar cell production would never be limited by the availability of the elements or by their compatibility with the environment. An energy gap of 0.95 eV has been determined for pyrite, and it is noted that the theoretical efficiency limit for solar energy conversion in this material is of the order of 15-20 percent.

  10. Impact of optical properties of front glass substrates on Cu(In,Ga)Se{sub 2} solar cells using lift-off process

    Energy Technology Data Exchange (ETDEWEB)

    Tamura, Akihiro, E-mail: ro005080@ed.ritsumei.ac.jp [College of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-0058 (Japan); Abe, Yasuhiro [Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, Kusatsu, Shiga 525-0058 (Japan); Minemoto, Takashi [College of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-0058 (Japan)

    2013-11-01

    Transmittance of a front glass is one of the important factors in the development of high efficiency superstrate-type Cu(In,Ga)Se{sub 2} (CIGS) solar cells. In this study, we investigated the impact of optical properties of the front glass on the solar cell performance of the CIGS solar cells fabricated using the lift-off process. First, optical properties of quartz substrates and soda-lime glass (SLG) substrates with various thicknesses were investigated. Although optical properties of the SLG substrates depend on the thickness, those of the quartz substrates hardly depend on the thickness. Secondly, the superstrate-type CIGS solar cells were fabricated using 1-mm-thick SLG or 1-mm-thick quartz substrates. As a result, the short-circuit current density of the superstrate-type CIGS solar cell with 1-mm-thick quartz substrate was approximately 7% higher than that with 1-mm-thick SLG substrate, and its conversion efficiency was 7.1%. The external quantum efficiency of the solar cells was also improved using the quartz substrate as a front glass because transmittance and absorptance of the quartz substrate were superior to those of the SLG substrate. We therefore conclude that optical properties of the front glasses play an important role in the improvement of the superstrate-type solar cells. - Highlights: • Superstrate type Cu(In,Ga)Se{sub 2} solar cells are fabricated by lift-off process. • Various glasses are used as front glass for lift-off. • The impact of optical properties of the glasses on cell performance is investigated. • Quartz front glass gives 7% higher short-circuit current than soda-lime glass. • High transmittance is desired for front glass.

  11. Modelling Defects Acceptors And Determination Of Electric Model From The Nyquist Plot And Bode In Thin Film CIGS

    Directory of Open Access Journals (Sweden)

    Demba Diallo

    2015-08-01

    Full Text Available Abstract The performance of the chalcopyrite material CuInGaSe2 CIGS used as an absorber layer in thin-film photovoltaic devices is significantly affected by the presence of native defects. Multivalent defects e.g. double acceptors or simple acceptor are important immaterial used in solar cell production in general and in chalcopyrite materials in particular. We used the thin film solar cell simulation software SCAPS to enable the simulation of multivalent defects with up to five different charge states.Algorithms enabled us to simulate an arbitrary number of possible states of load. The presented solution method avoids numerical inaccuracies caused by the subtraction of two almost equal numbers. This new modelling facility is afterwards used to investigate the consequences of the multivalent character of defects for the simulation of chalcopyrite based CIGS. The capacitance increase with the evolution of the number of defects C- f curves have found to have defect dependence.

  12. Progress on Low-Temperature Pulsed Electron Deposition of CuInGaSe2 Solar Cells

    Directory of Open Access Journals (Sweden)

    Massimo Mazzer

    2016-03-01

    Full Text Available The quest for single-stage deposition of CuInGaSe2 (CIGS is an open race to replace very effective but capital intensive thin film solar cell manufacturing processes like multiple-stage coevaporation or sputtering combined with high pressure selenisation treatments. In this paper the most recent achievements of Low Temperature Pulsed Electron Deposition (LTPED, a novel single stage deposition process by which CIGS can be deposited at 250 °C, are presented and discussed. We show that selenium loss during the film deposition is not a problem with LTPED as good crystalline films are formed very close to the melting temperature of selenium. The mechanism of formation of good ohmic contacts between CIGS and Mo in the absence of any MoSe2 transition layers is also illustrated, followed by a brief summary of the measured characteristics of test solar cells grown by LTPED. The 17% efficiency target achieved by lab-scale CIGS devices without bandgap modulation, antireflection coating or K-doping is considered to be a crucial milestone along the path to the industrial scale-up of LTPED. The paper ends with a brief review of the open scientific and technological issues related to the scale-up and the possible future applications of the new technology.

  13. Review on Alkali Element Doping in Cu(In,GaSe2 Thin Films and Solar Cells

    Directory of Open Access Journals (Sweden)

    Yun Sun

    2017-08-01

    Full Text Available This paper reviews the development history of alkali element doping on Cu(In,GaSe2 (CIGS solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIGS absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride (NaF and KF post-deposition treatment (PDT, we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low-temperature co-evaporation processes. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss. This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect (CdCu+ density, which is transferred from the acceptor defect (VCu− and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.

  14. Characteristics of molybdenum bilayer back contacts for Cu(In,Ga)Se{sub 2} solar cells on Ti foils

    Energy Technology Data Exchange (ETDEWEB)

    Roger, Charles, E-mail: charles.rgr@gmail.com [CEA, LITEN, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Noël, Sébastien; Sicardy, Olivier; Faucherand, Pascal; Grenet, Louis; Karst, Nicolas; Fournier, Hélène; Roux, Frédéric [CEA, LITEN, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Ducroquet, Frédérique [IMEP-LAHC, Minatec, Grenoble-INP, CNRS UMR 5130, 38016 Grenoble (France); Brioude, Arnaud [Laboratoire des Multimatériaux et Interfaces, UMR 5615, Villeurbanne (France); Perraud, Simon [CEA, LITEN, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2013-12-02

    Molybdenum back contact properties are critical for Cu(In,Ga)Se{sub 2} (CIGS) solar cell performance on metallic substrates. In this work, we investigated the properties of sputter-deposited Mo bilayer back contacts on Ti foils. The morphology, electrical resistivity, optical reflectance and residual mechanical stress of the bottom Mo layer were modified by varying the working pressure during its deposition. Working pressures ranging from 0.27 Pa to 4.00 Pa were used. The top Mo layer was deposited using constant conditions at a pressure of 0.13 Pa. It was demonstrated that unlike a Mo monolayer, the use of a Mo bilayer allows controlling the mechanical stress at the Mo/CIGS interface without degrading the optical reflectance and the electrical resistance of the back contact. It was also found that the morphology of the bottom Mo layer affects the growth of the top Mo layer, resulting in a modified back contact surface morphology. This induces changes in the crystalline orientation of the CIGS layer. The resulting solar cell characteristics strongly vary as a function of the bottom Mo layer deposition pressure. A bottom Mo layer growth at 2.93 Pa allows improving the solar cell conversion efficiency by 1.5 times compared to a bottom Mo layer deposited at 0.27 Pa. Using the improved Mo bilayer back contact, a maximum solar cell efficiency of 10.0% was obtained without sodium addition nor anti-reflection coating. - Highlights: • Mo bilayer back contacts for Cu(In,Ga)Se{sub 2} solar cells were grown on Ti substrates. • The sputtering pressure of the bottom Mo layer was varied between 0.27 Pa and 4 Pa. • The top Mo layer controls the optical and electrical properties of the back contact. • The structure of the bottom Mo layer influences the morphology of the top Mo layer. • The back contact affects the CIGS texture, device series resistance and efficiency.

  15. Characteristics of molybdenum bilayer back contacts for Cu(In,Ga)Se2 solar cells on Ti foils

    International Nuclear Information System (INIS)

    Roger, Charles; Noël, Sébastien; Sicardy, Olivier; Faucherand, Pascal; Grenet, Louis; Karst, Nicolas; Fournier, Hélène; Roux, Frédéric; Ducroquet, Frédérique; Brioude, Arnaud; Perraud, Simon

    2013-01-01

    Molybdenum back contact properties are critical for Cu(In,Ga)Se 2 (CIGS) solar cell performance on metallic substrates. In this work, we investigated the properties of sputter-deposited Mo bilayer back contacts on Ti foils. The morphology, electrical resistivity, optical reflectance and residual mechanical stress of the bottom Mo layer were modified by varying the working pressure during its deposition. Working pressures ranging from 0.27 Pa to 4.00 Pa were used. The top Mo layer was deposited using constant conditions at a pressure of 0.13 Pa. It was demonstrated that unlike a Mo monolayer, the use of a Mo bilayer allows controlling the mechanical stress at the Mo/CIGS interface without degrading the optical reflectance and the electrical resistance of the back contact. It was also found that the morphology of the bottom Mo layer affects the growth of the top Mo layer, resulting in a modified back contact surface morphology. This induces changes in the crystalline orientation of the CIGS layer. The resulting solar cell characteristics strongly vary as a function of the bottom Mo layer deposition pressure. A bottom Mo layer growth at 2.93 Pa allows improving the solar cell conversion efficiency by 1.5 times compared to a bottom Mo layer deposited at 0.27 Pa. Using the improved Mo bilayer back contact, a maximum solar cell efficiency of 10.0% was obtained without sodium addition nor anti-reflection coating. - Highlights: • Mo bilayer back contacts for Cu(In,Ga)Se 2 solar cells were grown on Ti substrates. • The sputtering pressure of the bottom Mo layer was varied between 0.27 Pa and 4 Pa. • The top Mo layer controls the optical and electrical properties of the back contact. • The structure of the bottom Mo layer influences the morphology of the top Mo layer. • The back contact affects the CIGS texture, device series resistance and efficiency

  16. Effects of potassium on kesterite solar cells: Similarities, differences and synergies with sodium

    Directory of Open Access Journals (Sweden)

    S. G. Haass

    2018-01-01

    Full Text Available Addition of alkali dopants is essential for achieving high-efficiency conversion efficiency of thin film solar cells based on chalcogenide semiconductors like Cu(In,GaSe2 (CIGS and Cu2ZnSn(S,Se4 (CZTSSe also called kesterite. Whereas the treatment with potassium allows boosting the performance of CIGS solar cells as compared to the conventional sodium doping, it is debated if similar effects can be expected for kesterite solar cells. Here the influence of potassium is investigated by introducing the dopant during the solution processing of kesterite absorbers. It is confirmed that the presence of potassium leads to an enhanced grain growth and a ten-fold lower potassium concentration is sufficient for obtaining grain size similar to sodium-containing absorbers. Potassium is located predominantly at grain boundaries and it suppresses incorporation of sodium into the absorber layer. The potassium doping increases the apparent carrier concentration to ∼2×1016 cm-3 for a potassium concentration of 0.2 at%. The potassium-doped solar cells yield conversion efficiency close to 10%, on par with only sodium-doped samples. Co-doping with potassium and sodium has not revealed any beneficial synergetic effects and it is concluded that both dopants exhibit similar effects on the kesterite solar cell performance.

  17. Four-cell solar tracker

    Science.gov (United States)

    Berdahl, C. M.

    1981-01-01

    Forty cm Sun tracker, consisting of optical telescope and four solar cells, stays pointed at Sun throughout day for maximum energy collection. Each solar cell generates voltage proportional to part of solar image it receives; voltages drive servomotors that keep image centered. Mirrored portion of cylinder extends acquisition angle of device by reflecting Sun image back onto solar cells.

  18. Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

    Science.gov (United States)

    Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

    2018-03-01

    The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

  19. Effect of Thermal Annealing on the Redistribution of Alkali Metals in Cu(In,Ga)Se2 Solar Cells on Glass Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, Harvey L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kamikawa, Yukiko [National Institute of Advanced Industrial Science and Technology (AIST); Nishinaga, Jiro [National Institute of Advanced Industrial Science and Technology (AIST); Ishizuka, Shogo [National Institute of Advanced Industrial Science and Technology (AIST); Tayagaki, Takeshi [National Institute of Advanced Industrial Science and Technology (AIST); Shibata, Hajime [National Institute of Advanced Industrial Science and Technology (AIST); Matsubara, Koji [National Institute of Advanced Industrial Science and Technology (AIST); Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST)

    2018-03-02

    The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

  20. Quantum dot solar cell

    International Nuclear Information System (INIS)

    Ahamefula, U.C.; Sulaiman, M.Y.; Sopian, K.; Ibarahim, Z.; Ibrahim, N.; Alghoul, M.A.; Haw, L.C.; Yahya, M.; Amin, N.; Mat, S.; Ruslan, M.H.

    2009-01-01

    Full text: The much awaited desire of replacing fossil fuel with photovoltaic will remain a fairy tale if the myriad of issues facing solar cell development are marginalized. Foremost in the list is the issue of cost. Silicon has reached a stage where its use on large scale can no longer be lavishly depended upon. The demand for high grade silicon from the microelectronics and solar industries has soared leading to scarcity. New approach has to be sought. Notable is the increased attention on thin films such as cadmium telluride, copper indium gallium diselenide, amorphous silicon, and the not so thin non-crystalline family of silicon. While efforts to address the issues of stability, toxicity and efficiency of these systems are ongoing, another novel approach is quietly making its appearance - quantum dots. Quantum dots seem to be promising candidates for solar cells because of the opportunity to manipulate their energy levels allowing absorption of a wider solar spectrum. Utilization of minute quantity of these nano structures is enough to bring the cost of solar cell down and to ascertain sustainable supply of useful material. The paper outlines the progress that has been made on quantum dot solar cells. (author)

  1. Perovskite Solar Cell

    Indian Academy of Sciences (India)

    Organic–inorganic halide perovskite, a newcomerin the solar cell industry has proved its potential forincreasing efficiency rapidly from 3.8% in 2009 to 22.1% in2016. High efficiency, flexibility, and cell architecture of theemerging hybrid halide perovskite have caught the attentionof researchers and technologists in the field.

  2. Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

    NARCIS (Netherlands)

    Frijters, C.H.; Bolt, P.J.; Poodt, P.W.G.; Knaapen, R.; Brink, J. van den; Ruth, M.; Bremaud, D.; Illiberi, A.

    2016-01-01

    In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale

  3. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of next-generation thin-film solar cell module manufacturing technology - Development of CIS solar cell module manufacturing technology - Development of high-quality film enlargement technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi module no seizo gijutsu kaihatsu / CIS taiyo denchi module no seizo gijutsu kaihatsu / kohinshitsumaku no daimensekika gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The project aims to establish a manufacturing process that enables both high-quality CuInSe{sub 2} (CIS) film solar cell enlargement and cost reduction and to develop a device structure which uses less heavy metal for the purposes of increasing the CIS thin-film solar cell size and efficiency and decreasing environmental impact. Several element technologies have been established for increasing the area of high-efficiency Cu(In, Ga)Se{sub 2} (CIGS) solar cells. Concerning the enlargement of the photoabsorption layer which is to assume the most important role, it is found that a high-quality CIGS film, which is near homogeneous though within a 10cm times 10cm area, is fabricated by an in-line vapor deposition method. As for dead area reduction and high-speed patterning, it is found that laser scribing works effectively in the patterning of the window layer and photoabsorption layer. As for reduction in the use of heavy metal, a high efficiency of 16.2% is attained in a cell not using a CdS film as expected in the case of a cell using a CdS film, this thanks to a CIGS film surface reforming technique. The technique of junction formation for CIGS solar cells is improved, and then a true efficiency of 18.5% is achieved. (NEDO)

  4. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy.

    Science.gov (United States)

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-12-18

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells.

  5. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology, Otaniemi (Finland). Dept. of Electrical and Communications Engineering

    1998-10-01

    Photovoltaic research in the Electron Physics Laboratory started in 1993, when laboratory joined the national TEKES/NEMO 2 research program. Since the beginning of the project, characterization as well as experimentally orientated development of the fabrication process of the solar cells were carried out parallery. The process development research started by the initiatives of the Finnish industry. At the moment a large amount of the laboratory personnel works on solar cell research and the financing comes mainly from external projects. The funding for the research has come from TEKES, Ministry of Education, Finnish Academy, GETA graduate school, special equipment grants of the university, and from the laboratory

  6. Flexible Solar Cells

    Science.gov (United States)

    1994-01-01

    Solar cell "modules" are plastic strips coated with thin films of photovoltaic silicon that collect solar energy for instant conversion into electricity. Lasers divide the thin film coating into smaller cells to build up voltage. Developed by Iowa Thin Film Technologies under NASA and DOE grants, the modules are used as electrical supply for advertising displays, battery rechargers for recreational vehicles, and to power model airplanes. The company is planning other applications both in consumer goods and as a power source in underdeveloped countries.

  7. Ion beam analysis of Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Karydas, A.G. [International Atomic Energy Agency (IAEA), IAEA Laboratories, Nuclear Science and Instrumentation Laboratory, A-2444 Seibersdorf (Austria); Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153 10 Aghia Paraskevi, Athens Greece (Greece); Streeck, C. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Radovic, I. Bogdanovic [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Kaufmann, C.; Rissom, T. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Beckhoff, B. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Jaksic, M. [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E. N. 10, Apartado 21, 2686-953 Sacavém (Portugal)

    2015-11-30

    Graphical abstract: - Highlights: • Elemental depth profiles for various CIGS thin films were quantitatively determined. • Pure absorbers, complete cell and bilayer solar cells were prepared and analyzed. • Synergistic PIXE and RBS analysis of thin solar cells using alpha beam particles. • High energy alpha beam resolved completely the Indium depth profile. • Synchrotron based Reference Free GIXRF quantitative analysis validated IBA results. - Abstract: The present work investigates the potential of ion beam analysis (IBA) techniques such as the Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) using helium ions to provide quantitative in-depth elemental analysis of various types of Cu(In,Ga)Se{sub 2} thin films. These films with a thickness of about 2 μm are used as absorber layers in photovoltaic devices with continuously increasing the performance of this technology. The preparation process generally aims to obtain an in-depth gradient of In and Ga concentrations that optimizes the optoelectronic and electrical properties of the solar cell. The measurements were performed at directly accessible single or double layered CIGS absorbers and at buried absorbers in completed thin film solar cells. The IBA data were analyzed simultaneously in order to derive best fitted profiles that match all experimental RBS and PIXE spectra. For some samples elemental profiles deduced form synchrotron based, reference free grazing incidence X-ray fluorescence analysis were compared with the IBA results and an overall good agreement was observed within quoted uncertainties.

  8. E-Cigs, Menthol & Dip

    Science.gov (United States)

    ... are many types of tobacco products. Learn how e-cigarettes, menthol cigarettes, smokeless tobacco, and other products are ... your health. What We Know About Electronic Cigarettes (E-cigarettes) Some people use e-cigs to quit smoking. ...

  9. E-Cigs, Menthol & Dip

    Science.gov (United States)

    ... Close Search × MENU BACK CLOSE SMOKEFREE.GOV HOME E-Cigs, Menthol & Dip There are many types of tobacco products. Learn how e-cigarettes, menthol cigarettes, smokeless tobacco, and other products ...

  10. Functional layers for CIGS solar cell on-chip fabrication during post-processing

    NARCIS (Netherlands)

    Lu, J.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2008-01-01

    The ubiquitous deploying of wireless electronic devices due to pervasive computing results in the idea of Energy Scavenging, i.e., harvesting ambient energy from surroundings of the electronic devices [1]. As an approach to the most practical realization of such an energy scavenger, copper indium

  11. Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

    NARCIS (Netherlands)

    Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2014-01-01

    Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing

  12. Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions

    Energy Technology Data Exchange (ETDEWEB)

    Bouttemy, M.; Tran-Van, P. [Institut Lavoisier de Versailles (ILV-UMR 8180 CNRS/UVSQ), 45 av. des Etats Unis, 78035 Versailles (France); Gerard, I., E-mail: gerard@chimie.uvsq.fr [Institut Lavoisier de Versailles (ILV-UMR 8180 CNRS/UVSQ), 45 av. des Etats Unis, 78035 Versailles (France); Hildebrandt, T.; Causier, A. [Institut Lavoisier de Versailles (ILV-UMR 8180 CNRS/UVSQ), 45 av. des Etats Unis, 78035 Versailles (France); Pelouard, J.L.; Dagher, G. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), route de Nozay 91460 Marcoussis (France); Jehl, Z.; Naghavi, N. [Institut de Recherche et Developpement sur l' Energie Photovoltaique (IRDEP -UMR 7174 CNRS/EDF/Chimie-ParisTech), 6 quai Watier, 78401 Chatou (France); Voorwinden, G.; Dimmler, B. [Wuerth Elektronik Research GmbH, Industriestr. 4, 70565 Stuttgart (Germany); Powalla, M. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung (ZSW), Industriestr. 6, 70565 Stuttgart (Germany); Guillemoles, J.F. [Institut de Recherche et Developpement sur l' Energie Photovoltaique (IRDEP -UMR 7174 CNRS/EDF/Chimie-ParisTech), 6 quai Watier, 78401 Chatou (France); Lincot, D. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), route de Nozay 91460 Marcoussis (France); Etcheberry, A. [Institut Lavoisier de Versailles (ILV-UMR 8180 CNRS/UVSQ), 45 av. des Etats Unis, 78035 Versailles (France)

    2011-08-31

    CIGSe absorber was etched in HBr/Br{sub 2}/H{sub 2}O to prepare defined thicknesses of CIGSe between 2.7 and 0.5 {mu}m. We established a reproducible method of reducing the absorber thickness via chemical etching. We determine the dissolution kinetics rate of CIGSe using trace analysis by graphite furnace atomic absorption spectrometry of Ga and Cu. The roughness of the etching surface decreases during the first 500 nm of the etching to a steady state value of the root-mean-square roughness near 50 nm. X-ray photoelectron spectroscopy analyses demonstrate an etching process occurring with a constant chemical composition of the treated surface acidic bromine solutions provide a controlled chemical thinning process resulting in an almost flat surface and a very low superficial Se{sup 0} enrichment.

  13. Direct imaging of enhanced current collection on grain boundaries of Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, JunHo, E-mail: jhk@incheon.ac.kr [Department of Physics, Incheon National University, Incheon 406-772 (Korea, Republic of); National Center for Photovoltaics, National Renewable Energy Laboratory (NREL), Golden, Colorado 80401 (United States); Kim, SeongYeon [Department of Physics, Incheon National University, Incheon 406-772 (Korea, Republic of); Jiang, Chun-Sheng; Ramanathan, Kannan; Al-Jassim, Mowafak M. [National Center for Photovoltaics, National Renewable Energy Laboratory (NREL), Golden, Colorado 80401 (United States)

    2014-02-10

    We report on direct imaging of current collection by performing conductive atomic force microscopy (C-AFM) measurement on a complete Cu(In,Ga)Se{sub 2} solar cell. The localized current was imaged by milling away the top conductive layer of the device by repeated C-AFM scans. The result exhibits enhanced photocurrent collection on grain boundaries (GBs) of CIGS films, consistent with the argument for electric-field-assisted carrier collection on the GBs.

  14. The competing roles of i-ZnO in Cu(ln,Ga)Se¬2 solar cells

    NARCIS (Netherlands)

    Williams, B.L.; Zardetto, V.; Kniknie, B.J.; Verheijen, M.A.; Kessels, W.M.M.; Creatore, M.

    2016-01-01

    The electrical role of the highly resistive and transparent (HRT) i-ZnO layer in Cu(In, Ga)Se2(CIGS) solar cells is investigated. By tuning the resistivity of atomic layer deposited (ALD) i-ZnO through the use of post-growth O2-plasma treatments, it is shown that low i-ZnO carrier densities (i.e.

  15. The competing roles of i-ZnO in Cu(In,Ga)Se2 solar cells

    NARCIS (Netherlands)

    Williams, B.L.; Zardetto, V.; Kniknie, B.; Verheijen, M.A.; Kessels, W.M.M.; Creatore, M.

    2016-01-01

    The electrical role of the highly resistive and transparent (HRT) i-ZnO layer in Cu(In, Ga)Se2(CIGS) solar cells is investigated. By tuning the resistivity of atomic layer deposited (ALD) i-ZnO through the use of post-growth O2-plasma treatments, it is shown that low i-ZnO carrier densities (i.e.

  16. Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface

    Energy Technology Data Exchange (ETDEWEB)

    Chantana, J., E-mail: jakapan@fc.ritsumei.ac.jp; Minemoto, T. [Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan); Watanabe, T.; Teraji, S.; Kawamura, K. [Environment and Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2013-11-25

    Cu(In,Ga)Se{sub 2} (CIGS) absorbers with various Ga/III, Ga/(In+Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. It is revealed that open-circuit voltage (V{sub OC}) of CIGS solar cell is primarily dependent on averaged Ga/III near the surface of its absorber. This averaged Ga/III is well predicted by peak position of (220/204) preferred orientation of CIGS film near its surface investigated by glancing-incidence X-ray diffraction with 0.1° incident angle. Finally, the peak position of (220/204) preferred orientation is proposed as a measure of V{sub OC} before solar cell fabrication.

  17. Flexible silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Blakers, A.W.; Armour, T. [Centre for Sustainable Energy Systems, The Australian National University, Canberra ACT 0200 (Australia)

    2009-08-15

    In order to be useful for certain niche applications, crystalline silicon solar cells must be able to sustain either one-time flexure or multiple non-critical flexures without significant loss of strength or efficiency. This paper describes experimental characterisation of the behaviour of thin crystalline silicon solar cells, under either static or repeated flexure, by flexing samples and recording any resulting changes in performance. Thin SLIVER cells were used for the experiment. Mechanical strength was found to be unaffected after 100,000 flexures. Solar conversion efficiency remained at greater than 95% of the initial value after 100,000 flexures. Prolonged one-time flexure close to, but not below, the fracture radius resulted in no significant change of properties. For every sample, fracture occurred either on the first flexure to a given radius of curvature, or not at all when using that radius. In summary, for a given radius of curvature, either the flexed solar cells broke immediately, or they were essentially unaffected by prolonged or multiple flexing. (author)

  18. Flexible Solar Cells

    NARCIS (Netherlands)

    Galagan, Y.

    2018-01-01

    This chapter discusses roll-to-roll (R2R) manufacturing of organic and perovskite solar cells (PSCs), as these emerging photovoltaic (PV) technologies can be fabricated using well-known R2R printing and coating processes that are widely used in the industry. The manufacturing of PV devices starts

  19. Numerical Analysis of Copper-Indium-Gallium-Diselenide-Based Solar Cells by SCAPS-1D

    Directory of Open Access Journals (Sweden)

    S. Ouédraogo

    2013-01-01

    Full Text Available We used a one-dimensional simulation program Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D to investigate Copper-Indium-Gallium-Diselenide- (CIGS- based solar cells properties. Starting with a conventional ZnO-B/i-ZnO/CdS/CIGS structure, we simulated the parameters of current-voltage characteristics and showed how the absorber layer thickness, hole density, and band gap influence the short-circuit current density (Jsc, open-circuit voltage (Voc, fill factor (FF, and efficiency of solar cell. Our simulation results showed that all electrical parameters are greatly affected by the absorber thickness (w below 1000 nm, due to the increase of back-contact recombination and very poor absorption. Increasing hole density (p or absorber band gap (Eg improves Voc and leads to high efficiency, which equals value of 16.1% when p = 1016 cm−3 and Eg=1.2 eV. In order to reduce back-contact recombination, the effect of a very thin layer with high band gap inserted near the back contact and acting as electrons reflector, the so-called back-electron reflector (EBR, has been investigated. The performances of the solar cells are significantly improved, when ultrathin absorbers (w < 500 nm are used; the corresponding gain of Jsc due to the EBR is 3 mA/cm2. Our results are in good agreement with those reported in the literature from experiments.

  20. World's Most Efficient Solar Cell

    Science.gov (United States)

    World's Most Efficient Solar Cell National Renewable Energy Laboratory, Spectrolab Set Record For , 1999 - A solar cell that can convert sunlight to electricity at a record-setting 32 percent efficiency on Earth. Spectrolab of Sylmar, Calif., "grew" the record-setting solar cell. After

  1. Investigations into alterntive substrate, absorber, and buffer layer processing for Cu(In,Ga)Se{sub 2}-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tuttle, J.R.; Berens, T.A.; Keane, J. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    High-performance Cu(In,Ga)Se{sub 2}(CIGS)-based solar cells are presently fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na{sub 2}S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga){sub y}Se buffer layers contribute to cell performance above 10. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.

  2. Confinement - assisted shock-wave-induced thin-film delamination (SWIFD) of copper indium gallium diselenide (CIGS) on a flexible substrate

    Science.gov (United States)

    Lorenz, Pierre; Zagoranskiy, Igor; Ehrhardt, Martin; Han, Bing; Bayer, Lukas; Zimmer, Klaus

    2017-12-01

    The laser structuring of CIGS (copper indium gallium (di)selenide) solar cell material without influence and damaging the functionality of the active layer is a challenge for laser methods The shock-wave-induced thin-film delamination (SWIFD) process allows structuring without thermal modifications due to a spatial separation of the laser absorption from the functional layer removal process. In the present study, SWIFD structuring of CIGS solar cell stacks was investigated. The rear side of the polyimide was irradiated with a KrF-Excimer laser. The laser-induced ablation process generates a traverse shock wave, and the interaction of the shock wave with the layer-substrate interface results in a delamination process. The effect of a water confinement on the SWIFD process was studied where the rear side of the substrate was covered with a ∼2 mm thick water layer. The resultant surface morphology was analysed and discussed. At a sufficient number of laser pulses N and laser fluences Φ, the CIGS layer can be selectively removed from the Mo back contact. The water confinement, as well as the increasing laser beam size A0 and N, results in the reduction of the necessary minimal laser fluence Φth. Further, the delaminated CIGS area increased with increasing Φ, N, and A0.

  3. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology (Finland). Dept. of Electrical and Communications Engineering

    1998-12-31

    Photovoltaic research began at the Electron Physics Laboratory of the Helsinki University of Tehnology in 1993, when the laboratory joined the national NEMO 2 research program. During the early stages of the photovoltaic research the main objective was to establish necessary measurement and characterisation routines, as well as to develop the fabrication process. The fabrication process development work has been supported by characterisation and theoretical modelling of the solar cells. Theoretical investigations have been concerned with systematic studies of solar cell parameters, such as diffusion lengths, surface recombination velocities and junction depths. The main result of the modelling and characterisation work is a method which is based on a Laplace transform of the so-called spatial collection efficiency function of the cell. The basic objective of the research has been to develop a fabrication process cheap enough to be suitable for commercial production

  4. Investigations on electron beam evaporated Cu(In{sub 0.85}Ga{sub 0.15})Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalam, M.; Kannan, M.D.; Prasanna, S.; Jayakumar, S.; Balasundaraprabhu, R. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore (India); Saroja, M. [Department of Electronics, Erode Arts College, Erode (India)

    2009-09-15

    CIGS bulk with composition of CuIn{sub 0.85}Ga{sub 0.15}Se{sub 2} was synthesized by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films were then deposited onto well-cleaned glass substrates using the prepared bulk alloy by electron beam deposition method. The structural properties of the deposited films were studied using X-ray diffraction technique. The as-deposited CIGS films were found to be amorphous. On annealing, the films crystallized with a tetragonal chalcopyrite structure. An intermediate Cu-rich phase precipitated at 200 C and dissociated at higher annealing temperatures. Average grain size calculated from the XRD spectra indicated that the films had a nano-crystalline structure and was further corroborated by AFM analysis of the sample surface. The chemical constituents present in the deposited CIGS films were identified using energy dispersive X-ray analysis. CIGS based solar cells were then fabricated on molybdenum and ITO coated glass substrates and the efficiencies have been evaluated. (author)

  5. Modeling and simulation of CuIn{sub 1−x}Ga{sub x}Se{sub 2} based thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

    2014-04-24

    In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

  6. Solar cell. Taiyo denchi

    Energy Technology Data Exchange (ETDEWEB)

    Kamihara, T; Kondo, S; Mori, K [Matsushita Electric Industrial Co. Ltd., Osaka (Japan)

    1990-10-23

    This invention provides a solar cell having high resistance to strong incident light and high temperature preservability. Reason of performance degradation of the solar cell in high temperature atmosphere thermally diffuses at the boundary surface of the silicon with metal particles. The method of blocking this thermal diffusion is that the film thickness is of the level that the electrons can pass through the film by a quantum dynamical tunnel effect. In this invention, the construction is that a transparent substrate, a transparent electrode, a P-type amorphous silicon, an I-type amorphous silicon, silica and a collector electrode are sequentially laminated and receives the incident light, thus generating a voltage between the two electrodes. Thickness of silica film is 10-100 microns. Materials of the collector electrode are either single element or alloys of Cs, K, Na, Li, Ba, Mg, Cd, Ta, Al, Mo, Zr, Co, Fe, Cu, Ag, W, Cr, Au and Ni. 13 figs., 1 tab.

  7. Solar cell efficiency measurements

    International Nuclear Information System (INIS)

    Ostoja, P.

    1989-01-01

    Solar cells (and solar modules) have to be tested for their performance by means of sound reliable measurement procedures. The need for such measurements arises at various stages of research, of production, and of photovoltaic systems sizing and dimensioning. In fact, accurate measurements are necessary to the researcher, who studies new materials and new processes, to the manufacturer, who has to control his product and, finally, to the user, who needs sound measurements, in order to be in a position to make effective decisions about what kink of product will be needed and with what critical characteristics. In short, standard measurements that allow cells and modules to be characterized serve as a common language, allowing effective communication about products and requirements. 3 refs

  8. Copper variation in Cu(In,Ga)Se{sub 2} solar cells with indium sulphide buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Spiering, S., E-mail: stefanie.spiering@zsw-bw.de [Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Wuerttemberg, Industriestrasse 6, 70565 Stuttgart (Germany); Paetel, S.; Kessler, F. [Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Wuerttemberg, Industriestrasse 6, 70565 Stuttgart (Germany); Igalson, M.; Abdel Maksoud, H. [Warsaw University of Technology (WUT), Faculty of Physics, Koszykowa 75, 00-662 Warszawa (Poland)

    2015-05-01

    In the manufacturing of Cu(In,Ga)Se{sub 2} (CIGS) thin film solar cells the application of a buffer layer on top of the absorber is essential to obtain high efficiency devices. Regarding the roll-to-roll production of CIGS cells and modules a vacuum deposition process for the buffer is preferable to the conventional cadmium sulphide buffer deposited in a chemical bath. Promising results have already been achieved for the deposition of indium sulphide buffer by different vacuum techniques. The solar device performance is very sensitive to the conditions at the absorber-buffer heterojunction. In view of optimization we investigated the influence of the Cu content in the absorber on the current-voltage characteristics. In this work the integral copper content was varied between 19 and 23 at.% in CIGS on glass substrates. An improvement of the cell performance by enhanced open circuit voltage was observed for a reduction to ~ 21 at.% when thermally evaporated indium sulphide was applied as the buffer layer. The influence of stoichiometry deviations on the transport mechanism and secondary barriers in the device was studied using detailed dark and light current-voltage analysis and admittance spectroscopy and compared to the reference CdS-buffered cells. We conclude that the composition of the absorber in the interface region affects current transport in In{sub x}S{sub y}-buffered and CdS-buffered cells in different ways hence optimal Cu content in those two types of devices is different. - Highlights: • Influence of Cu-variation in CIGS cells with In{sub x}S{sub y} buffer layer on cell performance • Enhanced efficiency by slight reduction of Cu-content to 21 at.% • Contribution of tunnelling-enhanced interface recombination for higher Cu-content.

  9. BM Solar Cells

    KAUST Repository

    Firdaus, Yuliar

    2018-05-02

    Fullerene‐based materials are widely used as electron acceptors in organic bulk‐heterojunction solar cells; yet, they have rarely been used as the only photoactive component due to their low absorbance and limited charge generation efficiency. However, blending the wide‐bandgap p‐type material copper (I) thiocyanate (CuSCN) with [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC70BM) leads to the formation of a unique mesostructured p‐n like heterointerface between CuSCN and PC70BM and solar cells with a power conversion efficiency (PCE) of up to 5.4%. Here, we examine in detail the reasons for the surprisingly good device performance and elucidate the charge photogeneration and recombination mechanisms in CuSCN‐based devices with PC70BM as the exclusive light‐absorbing material. Our studies clearly demonstrate that a substantial fraction of the photocurrent in the CuSCN‐based devices results from improved dissociation of fullerene excitons and efficient charge transfer at the CuSCN:PC70BM interface combined with reduced geminate and nongeminate charge recombination losses. Our results have implications beyond the fullerene‐based devices studied here, as they demonstrate that careful selection of a mesostructured p‐type transparent semiconductor paves the path to a new type of efficient single photoactive material solar cells.

  10. BM Solar Cells

    KAUST Repository

    Firdaus, Yuliar; Seitkhan, Akmaral; Eisner, Flurin; Sit, Wai-Yu; Kan, Zhipeng; Wehbe, Nimer; Balawi, Ahmed H.; Yengel, Emre; Karuthedath, Safakath; Laquai, Fré dé ric; Anthopoulos, Thomas D.

    2018-01-01

    Fullerene‐based materials are widely used as electron acceptors in organic bulk‐heterojunction solar cells; yet, they have rarely been used as the only photoactive component due to their low absorbance and limited charge generation efficiency. However, blending the wide‐bandgap p‐type material copper (I) thiocyanate (CuSCN) with [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC70BM) leads to the formation of a unique mesostructured p‐n like heterointerface between CuSCN and PC70BM and solar cells with a power conversion efficiency (PCE) of up to 5.4%. Here, we examine in detail the reasons for the surprisingly good device performance and elucidate the charge photogeneration and recombination mechanisms in CuSCN‐based devices with PC70BM as the exclusive light‐absorbing material. Our studies clearly demonstrate that a substantial fraction of the photocurrent in the CuSCN‐based devices results from improved dissociation of fullerene excitons and efficient charge transfer at the CuSCN:PC70BM interface combined with reduced geminate and nongeminate charge recombination losses. Our results have implications beyond the fullerene‐based devices studied here, as they demonstrate that careful selection of a mesostructured p‐type transparent semiconductor paves the path to a new type of efficient single photoactive material solar cells.

  11. Solar cell. Taiyo denchi

    Energy Technology Data Exchange (ETDEWEB)

    Amemiya, S.; Hashimoto, Y. (Canon Inc., Tokyo (Japan))

    1991-05-17

    This invention provides a cheap solar cell having a transparent surface protective layer which satisfies both controversial properties such as high electroconductivity and high water repellency and also abated the reduction of photoelectric conversion. In other words, this invention provides a solar cell having a surface-protective layer prepared by lamination of a mixture of a transparent water-repelling resin and a transparent electroconductive oxide powder; said protective layer is grounded at the surface resistance of 1 {times} 10 {sup 10} ohm or less and the contact angle of water on said protective layer is 90 degrees or more. The transparent water-repelling resin used is a fliorine resin such as PTFE and a silicone resin such as organopolysiloxane. The transparent electrodonductive oxide powder used is tin oxide, indium oxide or a complex compound of ton oxide and antimony oxide. The solar cell of this invention can be used for a long time because the adhesion of the dusts and the contamination by dirty water are restricted. 1 fig., 1 tab.

  12. Applications of AMPS-1D for solar cell simulation

    Science.gov (United States)

    Zhu, Hong; Kalkan, Ali Kaan; Hou, Jingya; Fonash, Stephen J.

    1999-03-01

    The AMPS-1D PC computer program is now used by over 70 groups world-wide for detector and solar cell analysis. It has proved to be a very powerful tool in understanding device operation and physics for single crystal, poly-crystalline and amorphous structures. For example, AMPS-1D has been successful in explaining the "red kink" [1] and the "transient effect" in CdS/CIGS poly-crystalline solar cells. It has been used to show that thin film poly-Si structures, with reasonable light trapping, are capable of competitive solar cell conversion efficiencies. In the case of a-Si:H structures, it has been used, for example, to settle the discrepancies in bandgap measurement, to predict the effective QE>1 phenomenon later seen in these materials [2], to determine the relative roles of interface and bulk properties, and to point the direction toward 16% triple junction structures. In general AMPS-1D is used for cell and detector design, material parameter sensitivity studies, and parameter extraction. Recently we have shown that it can be used to determine optimum structure and light and voltage biasing conditions in the material parameter extraction function. Information on AMPS can be found at www.psu.edu/dept/AMPS/amps_web/AMPS.html and at other web sites set up by user groups.

  13. Transparent solar cell window module

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

    2010-03-15

    A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

  14. Silicon heterojunction solar cells

    CERN Document Server

    Fahrner, W R; Neitzert, H C

    2006-01-01

    The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made

  15. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  16. The development of hydrazine-processed Cu(In,Ga)(Se,S){sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bob, Brion; Lei, Bao; Chung, Choong-Heui; Yang, Wenbing; Hsu, Wan-Ching; Duan, Hsin-Sheng; Hou, William Wei-Jen; Li, Sheng-Han; Yang, Yang [Department of Materials Science and Engineering, University of California, Los Angeles, CA (United States)

    2012-05-15

    The hydrazine-based deposition of Cu(In,Ga)(S,Se){sub 2} (CIGS) thin films has attracted considerable attention in recent years due to its potential for the high-throughput production of photovoltaic devices based on this absorber material. This article provides an introduction as well as presenting a complete picture of the current status of hydrazine-based CIGS solar-cell fabrication, including the three major steps of this deposition process: dissolution of the precursor materials in hydrazine, deposition of a film from the resulting precursor solution, and the completion and characterization of a photovoltaic device following absorber deposition. Recent discoveries are then discussed, regarding the dissolution chemistry of the relevant precursor complexes in hydrazine, which together represent the true foundation of this processing method. Recent studies on CIGS film formation are then summarized, including the control and analysis of the crystalline phase, electronic bandgap, and film morphology. Finally, the latest progress in high-performance device fabrication is highlighted, with a focus on optoelectronic characterization including current-voltage, junction capacitance, and minority carrier lifetime measurements. Finally, a discussion and future outlook is provided. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Cascade Organic Solar Cells

    KAUST Repository

    Schlenker, Cody W.

    2011-09-27

    We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C 60/bathocuproine/Al. Using a tetracene layer grown in a descending energy cascade on 5,6-diphenyl-tetracene and capped with 5,6,11,12-tetraphenyl- tetracene, where the accessibility of the π-system in each material is expected to influence the rate of parasitic carrier leakage and charge recombination at the donor/acceptor interface, we observe an increase in open circuit voltage (Voc) of approximately 40% (corresponding to a change of +200 mV) compared to that of a single tetracene donor. Little change is observed in other parameters such as fill factor and short circuit current density (FF = 0.50 ± 0.02 and Jsc = 2.55 ± 0.23 mA/cm2) compared to those of the control tetracene-C60 solar cells (FF = 0.54 ± 0.02 and Jsc = 2.86 ± 0.23 mA/cm2). We demonstrate that this cascade architecture is effective in reducing losses due to polaron pair recombination at donor-acceptor interfaces, while enhancing spectral coverage, resulting in a substantial increase in the power conversion efficiency for cascade organic photovoltaic cells compared to tetracene and pentacene based devices with a single donor layer. © 2011 American Chemical Society.

  18. Cascade Organic Solar Cells

    KAUST Repository

    Schlenker, Cody W.; Barlier, Vincent S.; Chin, Stephanie W.; Whited, Matthew T.; McAnally, R. Eric; Forrest, Stephen R.; Thompson, Mark E.

    2011-01-01

    We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C 60/bathocuproine/Al. Using a tetracene layer grown in a descending energy cascade on 5,6-diphenyl-tetracene and capped with 5,6,11,12-tetraphenyl- tetracene, where the accessibility of the π-system in each material is expected to influence the rate of parasitic carrier leakage and charge recombination at the donor/acceptor interface, we observe an increase in open circuit voltage (Voc) of approximately 40% (corresponding to a change of +200 mV) compared to that of a single tetracene donor. Little change is observed in other parameters such as fill factor and short circuit current density (FF = 0.50 ± 0.02 and Jsc = 2.55 ± 0.23 mA/cm2) compared to those of the control tetracene-C60 solar cells (FF = 0.54 ± 0.02 and Jsc = 2.86 ± 0.23 mA/cm2). We demonstrate that this cascade architecture is effective in reducing losses due to polaron pair recombination at donor-acceptor interfaces, while enhancing spectral coverage, resulting in a substantial increase in the power conversion efficiency for cascade organic photovoltaic cells compared to tetracene and pentacene based devices with a single donor layer. © 2011 American Chemical Society.

  19. Industrial Silicon Wafer Solar Cells

    OpenAIRE

    Neuhaus, Dirk-Holger; Münzer, Adolf

    2007-01-01

    In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

  20. Solar cell materials developing technologies

    CERN Document Server

    Conibeer, Gavin J

    2014-01-01

    This book presents a comparison of solar cell materials, including both new materials based on organics, nanostructures and novel inorganics and developments in more traditional photovoltaic materials. It surveys the materials and materials trends in the field including third generation solar cells (multiple energy level cells, thermal approaches and the modification of the solar spectrum) with an eye firmly on low costs, energy efficiency and the use of abundant non-toxic materials.

  1. Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells

    Science.gov (United States)

    Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

    2010-12-01

    We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell.

  2. Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se{sub 2} junction properties in Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Han-Kyu; Ok, Eun-A [Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Kim, Won-Mok; Park, Jong-Keuk [Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Seong, Tae-Yeon [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Lee, Dong Wha; Cho, Hoon Young [Department of Physics, College of Engineering, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, Jeung-hyun, E-mail: jhjeong@kist.re.kr [Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of)

    2013-11-01

    The effects of varying the conditions for the chemical bath deposition (CBD) of cadmium sulfide (CdS) layers on CdS/Cu(In,Ga)Se{sub 2} (CIGS) hetero-junctions were investigated using photoluminescence (PL), electroluminescence (EL), deep level transient spectroscopy (DLTS), and red-light-illuminated current-voltage (I–V) measurements. We demonstrated that varying CBD-CdS conditions such as the temperature and time influenced the recombination pathways around the CdS/CIGS junction via the formation of different electronic defects, which eventually changed the photovoltaic conversion efficiency. As the CBD-CdS time and temperature were increased, the cell efficiency decreased. PL measurements revealed that this degradation of the cell efficiency was accompanied by increases in the defect-related recombination, which were attributed to the existence of donor defects around CdS/CIGS having an energy level of 0.65 eV below conduction band, as revealed by DLTS. Increasing distortions in the red-light-illuminated I–V characteristics suggested that the related defects might also have played a critical role in metastable changes around the CdS/CIGS junction. Because the CBD-CdS time and temperature were considered to influence the diffusion of impurities into the CIGS surface, the evolution of the efficiency, PL spectra, defect populations, and red-light-illuminated I–V characteristics observed in this work could be attributed to the diffusion of impurities during the CBD-CdS process. - Highlights: • CdS layers were grown by chemical bath deposition (CBD). • The CBD-CdS influenced the efficiency of Cu(In,Ga)Se{sub 2} (CIGS) solar cell. • It could be related to slight alteration in carrier recombination around CdS/CIGS. • Photo- and electroluminescence spectra detected those alterations in recombination. • The variation of results could be related to the changes in deep-level defects.

  3. Dye solar cell research

    CSIR Research Space (South Africa)

    Cummings, F

    2009-11-01

    Full Text Available Cummings Energy and Processes Materials Science and Manufacturing Council for Scientific and Industrial Research P.O. Box 395 Pretoria 0001, South Africa 27 November 2009 CONTENT head2rightBackground head2rightCSIR Dye Solar Cell Research head2... rightCollaborations and Links © CSIR 2007 www.csir.co.za head2rightAcknowledgements BACKGROUND head2rightSA is dry: Annual rainfall average of 450 mm compared with a world average of 860 mm head2rightOn upside, we have some...

  4. Dye Sensitized Solar Cell, DSSC

    Directory of Open Access Journals (Sweden)

    Pongsatorn Amornpitoksuk

    2003-07-01

    Full Text Available A dye sensitized solar cell is a new type of solar cell. The operating system of this solar cell type is similar to plant’s photosynthesis process. The sensitizer is available for absorption light and transfer electrons to nanocrystalline metal oxide semiconductor. The ruthenium(II complexes with polypyridyl ligands are usually used as the sensitizers in solar cell. At the present time, the complex of [Ru(2,2',2'’-(COOH3- terpy(NCS3] is the most efficient sensitizer. The total photon to current conversion efficiency was approximately 10% at AM = 1.5.

  5. Space Solar Cell Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Measures, characterizes, and analyzes photovoltaic materials and devices. The primary focus is the measurement and characterization of solar cell response...

  6. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  7. Emerging Solar Technologies: Perovskite Solar Cell

    Indian Academy of Sciences (India)

    energy technologies and ... cost-effective and feasible non-silicon solar cell technologies. ..... storing in the air for long periods, and the stability reached up to .... [12] Y Liu, L A Renna, M Bag, Z A Page, P Kim, J Choi, T Emrick, D Venkatara-.

  8. One-pot Synthesis of Soluble Nanoscale CIGS Photoactive Functional Materials

    Directory of Open Access Journals (Sweden)

    Yan Aixia

    2007-01-01

    Full Text Available Abstract Promising alternatives for solar energy utilization are thin film technologies involving various new materials. This contribution describes an easy and inexpensive synthetic method that can be used to prepare soluble nanoscale triphenyl phosphine-coordinated CIGS (TPP-CIGS photoactive functional materials. This complex is stable in the solid state under the irradiation of the ambient light, but its solution becomes a little bit unstable under the illumination of the low intensity laser.

  9. Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

    2015-05-01

    The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

  10. Recycling of Indium From CIGS Photovoltaic Cells: Potential of Combining Acid-Resistant Nanofiltration with Liquid-Liquid Extraction.

    NARCIS (Netherlands)

    Zimmermann, Y.S.; Niewersch, C.; Lenz, M.; Corvini, P.F.X.; Schäffer, A.; Wintgens, T.

    2014-01-01

    Electronic consumer products such as smartphones, TV, computers, light-emitting diodes, and photovoltaic cells crucially depend on metals and metalloids. So-called “urban mining” considers them as secondary resources since they may contain precious elements at concentrations many times higher than

  11. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  12. Performance of Photovoltaic Modules of Different Solar Cells

    Directory of Open Access Journals (Sweden)

    Ankita Gaur

    2013-01-01

    Full Text Available In this paper, an attempt of performance evaluation of semitransparent and opaque photovoltaic (PV modules of different generation solar cells, having the maximum efficiencies reported in the literature at standard test conditions (STC, has been carried out particularly for the months of January and June. The outdoor performance is also evaluated for the commercially available semitransparent and opaque PV modules. Annual electrical energy, capitalized cost, annualized uniform cost (unacost, and cost per unit electrical energy for both types of solar modules, namely, semitransparent and opaque have also been computed along with their characteristics curves. Semitransparent PV modules have shown higher efficiencies compared to the opaque ones. Calculations show that for the PV modules made in laboratory, CdTe exhibits the maximum annual electrical energy generation resulting into minimum cost per unit electrical energy, whereas a-Si/nc-Si possesses the maximum annual electrical energy generation giving minimum cost per unit electrical energy when commercially available solar modules are concerned. CIGS has shown the lowest capitalized cost over all other PV technologies.

  13. Solar cell reloaded; Solarzelle reloaded

    Energy Technology Data Exchange (ETDEWEB)

    Iken, Joern

    2013-06-06

    Who comes up with something special, he may also compete with Chinese. The German-Scandinavian company Innotech Solar extends its solar module production capacity even in the midst of the crisis. Innotech Solar restores damaged cells. For this, the damaged areas are isolated and inactivated. [German] Wer sich etwas Besonderes einfallen laesst, kann auch mit chinesischer Konkurrenz bestehen. Das deutsch-skandinavische Unternehmen Innotech Solar erweitert seine Kapazitaet zur Modulherstellung sogar mitten in der Krise. Das Geschaeftsmodell der Innotech Solar sieht vor, vorgeschaedigte Solarzellen wiederherzustellen. Dafuer werden die schadhaften Stellen isoliert und stillgelegt.

  14. Upconversion in solar cells

    Science.gov (United States)

    2013-01-01

    The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Modification of the spectrum requires down- and/or upconversion or downshifting of the spectrum, meaning that the energy of photons is modified to either lower (down) or higher (up) energy. Nanostructures such as quantum dots, luminescent dye molecules, and lanthanide-doped glasses are capable of absorbing photons at a certain wavelength and emitting photons at a different (shorter or longer) wavelength. We will discuss upconversion by lanthanide compounds in various host materials and will further demonstrate upconversion to work for thin-film silicon solar cells. PMID:23413889

  15. Back wall solar cell

    Science.gov (United States)

    Brandhorst, H. W., Jr. (Inventor)

    1978-01-01

    A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

  16. Photon management in solar cells

    CERN Document Server

    Rau, Uwe; Gombert, Andreas

    2015-01-01

    Written by renowned experts in the field of photon management in solar cells, this one-stop reference gives an introduction to the physics of light management in solar cells, and discusses the different concepts and methods of applying photon management. The authors cover the physics, principles, concepts, technologies, and methods used, explaining how to increase the efficiency of solar cells by splitting or modifying the solar spectrum before they absorb the sunlight. In so doing, they present novel concepts and materials allowing for the cheaper, more flexible manufacture of solar cells and systems. For educational purposes, the authors have split the reasons for photon management into spatial and spectral light management. Bridging the gap between the photonics and the photovoltaics communities, this is an invaluable reference for materials scientists, physicists in industry, experimental physicists, lecturers in physics, Ph.D. students in physics and material sciences, engineers in power technology, appl...

  17. Nanostructuring of Solar Cell Surfaces

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... texturing of different Si solar cells. Theoretically the nanostructure topology may be described as a graded refractive index in a mean-field approximation between air and Si. The optical properties of the developed black Si were simulated and experimentally measured. Total AM1.5G-weighted average...

  18. Beneficial effect of post-deposition treatment in high-efficiency Cu(In,Ga)Se{sub 2} solar cells through reduced potential fluctuations

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, S. A., E-mail: Soren.Jensen@nrel.gov, E-mail: Darius.Kuciauskas@nrel.gov; Glynn, S.; Kanevce, A.; Dippo, P.; Li, J. V.; Levi, D. H.; Kuciauskas, D., E-mail: Soren.Jensen@nrel.gov, E-mail: Darius.Kuciauskas@nrel.gov [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2016-08-14

    World-record power conversion efficiencies for Cu(In,Ga)Se{sub 2} (CIGS) solar cells have been achieved via a post-deposition treatment with alkaline metals, which increases the open-circuit voltage and fill factor. We explore the role of the potassium fluoride (KF) post-deposition treatment in CIGS by employing energy- and time-resolved photoluminescence spectroscopy and electrical characterization combined with numerical modeling. The bulk carrier lifetime is found to increase with post-deposition treatment from 255 ns to 388 ns, which is the longest charge carrier lifetime reported for CIGS, and within ∼40% of the radiative limit. We find evidence that the post-deposition treatment causes a decrease in the electronic potential fluctuations. These potential fluctuations have previously been shown to reduce the open-circuit voltage and the device efficiency in CIGS. Additionally, numerical simulations based on the measured carrier lifetimes and mobilities show a diffusion length of ∼10 μm, which is ∼4 times larger than the film thickness. Thus, carrier collection in the bulk is not a limiting factor for device efficiency. By considering differences in doping, bandgap, and potential fluctuations, we present a possible explanation for the voltage difference between KF-treated and untreated samples.

  19. CTS and CZTS for solar cells made by pulsed laser deposition and pulsed electron deposition

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt

    This thesis concerns the deposition of thin films for solar cells using pulsed laser deposition (PLD) and pulsed electron deposition (PED). The aim was to deposit copper tin sulfide (CTS) and zinc sulfide (ZnS) by pulsed laser deposition to learn about these materials in relation to copper zinc tin...... time. We compared the results of CZTS deposition by PLD at DTU in Denmark to CZTS made by PED at IMEM-CNR, where CIGS solar cells have successfully been fabricated at very low processing temperatures. The main results of this work were as follows: Monoclinic-phase CTS films were made by pulsed laser...... deposition followed by high temperature annealing. The films were used to understand the double band gap that we and other groups observed in the material. The Cu-content of the CTS films varied depending on the laser fluence (the laser energy per pulse and per area). The material transfer from...

  20. Development of Enhanced Window layers for CIGS Photovoltaic Devices

    Science.gov (United States)

    Alexander, J. Nicholas

    One of the most promising thin film devices right now is the Copper Indium Gallium Selenide (CIGS) solar cell with maximum reported power conversion efficiency of 22.3%. The Transparent Conducting Oxide (TCO) which is the top layer of the CIGS device also known as the window layer, is responsible for collecting the electrons generated in the CIGS device and conducting them to the circuit. Development of a very low resistivity film with a high optical transmission is crucial for optimal performance of devices as well as the ability to be deployed without changes to their properties for several decades. Current TCOs such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) are met with limitations with either using large amounts of expensive materials such as indium, often requiring and anneal step to obtain good conductivity, or have shown poor long term reliability. This thesis is focused on development of InZnO and zirconium doped InZnO as a potential replacement TCO to obtain high conductivity and high transmission like the leading TCOs without needing heated depositions, post deposition annealing, and maintain a good film reliability. Zirconium doping was employed to farther enhance both the optical and electrical properties through enhancement of the films high frequency permittivity of InZnO while providing improved reliability to the film. The films were grown through a mix of DC and RF co-sputtering. InZnO films were deposited at varying indium concentration ( 10-30%) and samples were able to achieve low resistivity ( 7x10-4 O-cm), high mobility (>30 cm2/v.s), high carrier concentration (>10 20 cm-3), while maintaining high transmission (> 80%) in the visible and near-infrared region. After zirconium was incorporated into the InZnO films by replacement of the ZnO target with a ZrO2/ZnO (5:95) target, films of Zr:InZnO were deposit through the same method to achieve films that maintained very similar electrical and optical properties. The little

  1. Dust Removal from Solar Cells

    Science.gov (United States)

    Ashpis, David E. (Inventor)

    2015-01-01

    A solar panel cleaning device includes a solar panel having a plurality of photovoltaic cells arranged in rows and embedded in the solar panel with space between the rows. A transparent dielectric overlay is affixed to the solar panel. A plurality of electrode pairs each of which includes an upper and a lower electrode are arranged on opposite sides of the transparent dielectric and are affixed thereto. The electrodes may be transparent electrodes which may be arranged without concern for blocking sunlight to the solar panel. The solar panel may be a dielectric and its dielectric properties may be continuously and spatially variable. Alternatively the dielectric used may have dielectric segments which produce different electrical field and which affects the wind "generated."

  2. Solar cell with back side contacts

    Science.gov (United States)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

    2013-12-24

    A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

  3. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  4. A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

    International Nuclear Information System (INIS)

    Park, Se Jin; Moon, Sung Hwan; Min, Byoung Koun; Cho, Yunae; Kim, Ji Eun; Kim, Dong-Wook; Lee, Doh-Kwon; Gwak, Jihye; Kim, Jihyun

    2014-01-01

    Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(In x Ga 1−x )S 2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(In x Ga 1−x )(S 1−y Se y ) 2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm −2 . The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films. (paper)

  5. Radiation hard solar cell and array

    International Nuclear Information System (INIS)

    Russell, R.L.

    1975-01-01

    A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

  6. A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se4 and Cu(In,GaSe2 thin film solar cells

    Directory of Open Access Journals (Sweden)

    Mohammad Abdul Halim

    2016-03-01

    Full Text Available A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se4 (CZTSSe and the CuInGaSe2 (CIGS solar cells has been carried out. For this purpose, electroluminescence (EL and also bias-dependent time resolved photoluminescence (TRPL using femtosecond (fs laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

  7. A comparative study on charge carrier recombination across the junction region of Cu{sub 2}ZnSn(S,Se){sub 4} and Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Halim, Mohammad Abdul, E-mail: halimtsukuba2012@gmail.com; Islam, Muhammad Monirul; Luo, Xianjia; Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki [Energy Solution Business Center, Showa Shell Sekiyu K.K., Minato, Tokyo 135-8074 (Japan); Tampo, Hitoshi; Shibata, Hajime; Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2016-03-15

    A comparative study with focusing on carrier recombination properties in Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) and the CuInGaSe{sub 2} (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent V{sub OC} suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

  8. Solar electron source and thermionic solar cell

    Directory of Open Access Journals (Sweden)

    Parham Yaghoobi

    2012-12-01

    Full Text Available Common solar technologies are either photovoltaic/thermophotovoltaic, or use indirect methods of electricity generation such as boiling water for a steam turbine. Thermionic energy conversion based on the emission of electrons from a hot cathode into vacuum and their collection by an anode is also a promising route. However, thermionic solar conversion is extremely challenging as the sunlight intensity is too low for heating a conventional cathode to thermionic emission temperatures in a practical manner. Therefore, compared to other technologies, little has been done in this area, and the devices have been mainly limited to large experimental apparatus investigated for space power applications. Based on a recently observed “Heat Trap” effect in carbon nanotube arrays, allowing their efficient heating with low-power light, we report the first compact thermionic solar cell. Even using a simple off-the-shelf focusing lens, the device delivered over 1 V across a load. The device also shows intrinsic storage capacity.

  9. Luminescence investigation of Cu(In,Ga)Se{sub 2}solar cells with different Ga-contents grown in a three-stage-process on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wendt, Kristin; Mueller, Mathias; Hempel, Thomas; Bertram, Frank; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin for Materials and Energy (Germany)

    2011-07-01

    A fundamental advantage of Cu(In,Ga)Se{sub 2} (CIGS) alloys as absorber materials in thin-film solar cells is their direct band gap energies which can be varied between 1.04 eV (CuInSe{sub 2}) and 1.68 eV (CuGaSe{sub 2}). Photoluminescence (PL) spectra of complete CIGS solar cells with a systematic variation of the Ga-content in the absorber layer will be presented. The CIGS cells investigated were grown on a Mo back contact sputtered on soda lime glass and have a Ga-concentration ranging over the entire range from CuInSe{sub 2} to CuGaSe{sub 2}. Samples with Ga-contents between 100 % and 33 % show two broad luminescence bands. In contrast, CuInSe{sub 2} exhibits only one broad luminescence band. Each band is composed of two or three different transitions. Varying excitation density over four orders of magnitude results for samples with Ga-content of 0 % and 33 % in a blueshift of the main peak with increasing excitation density. For higher Ga-concentrations, first a blue- and then a redshift of the dominating peak with increasing excitation density is visible. The temperature dependence of the PL spectra is investigated going from 4 K to 300 K.

  10. Electronic defect study on low temperature processed Cu(In,Ga)Se2 thin-film solar cells and the influence of an Sb layer

    International Nuclear Information System (INIS)

    Van Puyvelde, L; Lauwaert, J; Devulder, W; Detavernier, C; Vrielinck, H; Tempez, A; Nishiwaki, S; Pianezzi, F; Tiwari, A N

    2015-01-01

    A way to lower the manufacturing cost of Cu(In,Ga)Se 2 (CIGS) thin-film solar cells is to use flexible polymer substrates instead of rigid glass. Because such substrates require lower temperature during absorber deposition, the grain growth of the absorber layer can be hindered which leads to a lower cell performance. Partial compensation of this efficiency loss might be accomplished by growing the absorber in the presence of Sb, which is reported to promote grain growth. In this work CIGS solar cells, deposited on glass substrates, at a reduced substrate temperature with a thin Sb layer (7, 12 nm) on top of the Mo contact are investigated. The diffusion profile of Sb is measured with plasma profiling time of flight mass spectrometry. The beneficial effect of Sb on efficiency and grain size is shown in quantum efficiency measurements and with scanning electron microscopy, respectively. Electric spectroscopy is used to explore the possible effects on the defect structure, more in particular on the dominant shallow acceptor. Admittance spectra exhibit a capacitance step to the geometric capacitance plateau at low temperature (5–60 K). Analyzing this capacitance step, we obtained a good estimate of the activation energy of the intrinsic defects that provide the p-type conductivity of the CIGS absorber. The measurements did not show a change in the nature of the dominant acceptor upon Sb treatment. (paper)

  11. Flexible Cu(In,Ga)Se2 thin-film solar cells for space application

    International Nuclear Information System (INIS)

    Otte, Karsten; Makhova, Liudmila; Braun, Alexander; Konovalov, Igor

    2006-01-01

    Thin film solar cells (TFSC) with Cu(In,Ga)Se 2 (CIGS) as absorber layer have been produced on rigid glass substrates for the terrestrial market. There exist, however, different investigations for manufacturing of TFSC on flexible substrates in order to achieve very thin and highly flexible (rollable) solar cells. Besides their capability to open new terrestrial market segments, they are considered as competitive candidates for future flexible thin film space power generators compared to traditional crystalline solar cells. This paper explains the advantages of flexible TFSC for usage in space, including:-low mass and storage volume, -high power/mass ratio [>100 W/kg at array level], -high radiation resistance against proton and electron radiation and, -lower production costs. These cells can be produced on flexible conductive and insulating substrate materials and have efficiency potentials of up to 15%. We report on the current development steps to adopt the TFSC technology to space requirements as well as the first European industrial approach to the roll-to-roll production of flexible CIGS-TFSC on polyimide as substrate material. Stability issues in space environment concern not only the TFSC itself, but all system components such as interconnects, cell assembly and flexible blankets. The adhesion of the back-contact to the substrate, the emissivity control in the infrared wavelength range, the electrical contacting and interconnection as well as flexible encapsulation are currently under investigation and are discussed in the paper. The production costs for TFSC for space application can be further reduced by sharing resources for the production of flexible TFSC for the terrestrial market; namely by using both, the existing terrestrial investment in production facilities as well as the synergies in R and D

  12. Hydrogenated indium oxide window layers for high-efficiency Cu(In,Ga)Se2 solar cells

    International Nuclear Information System (INIS)

    Jäger, Timo; Romanyuk, Yaroslav E.; Nishiwaki, Shiro; Bissig, Benjamin; Pianezzi, Fabian; Fuchs, Peter; Gretener, Christina; Tiwari, Ayodhya N.; Döbeli, Max

    2015-01-01

    High mobility hydrogenated indium oxide is investigated as a transparent contact for thin film Cu(In,Ga)Se 2 (CIGS) solar cells. Hydrogen doping of In 2 O 3 thin films is achieved by injection of H 2 O water vapor or H 2 gas during the sputter process. As-deposited amorphous In 2 O 3 :H films exhibit a high electron mobility of ∼50 cm 2 /Vs at room temperature. A bulk hydrogen concentration of ∼4 at. % was measured for both optimized H 2 O and H 2 -processed films, although the H 2 O-derived film exhibits a doping gradient as detected by elastic recoil detection analysis. Amorphous IOH films are implemented as front contacts in CIGS based solar cells, and their performance is compared with the reference ZnO:Al electrodes. The most significant feature of IOH containing devices is an enhanced open circuit voltage (V OC ) of ∼20 mV regardless of the doping approach, whereas the short circuit current and fill factor remain the same for the H 2 O case or slightly decrease for H 2 . The overall power conversion efficiency is improved from 15.7% to 16.2% by substituting ZnO:Al with IOH (H 2 O) as front contacts. Finally, stability tests of non-encapsulated solar cells in dry air at 80 °C and constant illumination for 500 h demonstrate a higher stability for IOH-containing devices

  13. Concentrator-solar-cell development

    Science.gov (United States)

    Grenon, L.

    1982-07-01

    A program is described which is a continuation of earlier programs for the development of high-efficiency, low-cost, silicon concentrator solar cells. The base-line process steps and process sequences identified in these earlier contracts were evaluated and specific processes reviewed. In particular, emphasis on the use of Czochralski-grown silicon wafers rather than float-zone wafers were examined. Additionally, a study of the trade-offs between textured and nontextured cells was initiated, and the limits within which the low-cost plated nickel copper metallization can be used in concentrator solar cell applications was identified.

  14. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  15. Solar cell power source system

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Yoichi; Toma, Kunio; Fukuwa, Shinji

    1988-05-14

    This invention aims to supply a power source system with stable power output by reducing the power loss due to switching in the voltage stabilization even when the power source is a solar cell with frequent voltage variation. For this purpose, in a solar cell power source system consisting of a solar cell, a storage battery, a switching regulator placed between the storage cell and the load, and a load, arrangement was made that, by judging the input voltage from the storage battery, switch-acting the transistor of the switching regulator, if the input voltage is higher than the specified voltage; is the input voltage is lower than the specified voltage, the transistor is put in a full-on state. By this, the supply voltage can be stabilized even when the voltage fluctuates, and system gets more efficient as the switching loss decreases in the voltage stabilizing means. (1 fig)

  16. Controlling the physical parameters of crystalline CIGS nanowires for use in superstrate configuration using vapor phase epitaxy

    Science.gov (United States)

    Lee, Dongjin; Jeon, H. C.; Kang, T. W.; Kumar, Sunil

    2018-03-01

    Indium tin oxide (ITO) is a suitable candidate for smart windows and bifacial semi-transparent solar cell applications. In this study, highly crystalline CuInGaSe2 (CIGS) nanowires were successfully grown by horizontal-type vapor phase epitaxy on an ITO substrate. Length, diameter, and density of the nanowires were studied by varying the growth temperature (500, 520, and 560 °C), time (3.5, 6.5, and 9.5 h), and type of catalyst (In, Au, and Ga). Length, diameter, and density of the nanowires were found to be highly dependent on the growth conditions. At an optimized growth period and temperature of 3.5 h and 520 °C, respectively, the length and diameter of the nanowires were found to increase when grown in a catalyst-free environment. However, the density of the nanowires was found to be higher while using a catalyst during growth. Even in a catalyst-free environment, an Indium cluster formed at the bottom of the nanowires. The source of these nanowires is believed to be Indium from the ITO substrate which was observed in the EDS measurement. TEM-based EDS and line EDS indicated that the nanowires are made up of CIGS material with a very low Gallium content. XRD measurements also show the appearance of wurtzite CIS nanowires grown on ITO in addition to the chalcopyrite phase. PL spectroscopy was done to see the near-band-edge emission for finding band-to-band optical transition in this material. Optical response of the CIGS nanowire network was also studied to see the photovoltaic effect. This work creates opportunities for making real solar cell devices in superstrate configuration.

  17. Solar energy utilization by solar cells and superblack absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Bonnet, D; Selders, M

    1975-10-31

    A review is presented of the physical principles responsible for the characteristics of solar cells, with particular reference to Si homojunction and CdS--Cu/sub 2/S thin film devices. Electric power generation from solar cells still appears uncompetitive economically except in special circumstances, but heating from solar energy using selective absorbers with low reemission is more promising.

  18. Differential in-depth characterization of co-evaporated Cu(In,Ga)Se{sub 2} thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Klinkert, Torben; Jubault, Marie; Donsanti, Frédérique; Lincot, Daniel; Guillemoles, Jean-François

    2014-05-02

    In this paper we report an alternative approach to perform in-depth characterisation of Cu(In,Ga)Se{sub 2} (CIGS) absorber layers. While usually groups stop their co-evaporation process at different points and analyse the precursor or intermediate phases, we perform in-depth analysis on the finished absorber layer as it will be used in the solar cell. A co-evaporated CIGS layer was cut to several samples, which then were chemically etched to different thicknesses. Compared to sputtering ablation techniques, this avoids the selective abrasion of atoms with different binding energies. The samples were analysed by Raman spectroscopy and X-ray diffraction. In-depth information is obtained by differentiating the signals of samples with different thicknesses after etching and a first order correction for absorption losses was executed. The Ga/(Ga + In) ratio extracted from X-ray diffraction measurements is in good agreement with the double gradient observed by glow discharge optical emission spectroscopy. A slight variation might indicate residual stress in the CIGS layer. A preferred (112) orientation across the whole film together with changing (220), (116) and (312) orientation preferences is reported and explained on the basis of the CIGS crystal structure. Raman signals attributed to ordered vacancy compounds are found throughout the whole sample thickness and not only close to the surface, as often reported in the literature. - Highlights: • Co-evaporated CIGS with double Ga gradient was chemically etched to different thicknesses. • X-ray diffractograms were differentiated to gain in-depth information. • (116)-oriented grains are found to tend to grow on (312)-oriented grains. • Change of preferred orientation was linked to crystal structure at grain boundaries. • Ga gradient from Vegard's law of XRD peaks is in agreement with GDOES measurement.

  19. Rehydrating dye sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Christian Hellert

    2017-05-01

    Full Text Available Dye sensitized solar cells (DSSCs are silicon free, simply producible solar cells. Longevity, however, is a longstanding problem for DSSCs. Due to liquid electrolytes being commonly used, evaporation of the electrolyte causes a dramatic drop in electric output as cells continue to be used unmaintained. Stopping evaporation has been tried in different ways in the past, albeit with differing degrees of success. In a recent project, a different route was chosen, exploring ways of revitalizing DSSCs after varying periods of usage. For this, we focused on rehydration of the cells using distilled water as well as the electrolyte contained in the cells. The results show a significant influence of these rehydration procedures on the solar cell efficiency. In possible applications of DSSCs in tents etc., morning dew may thus be used for rehydration of solar cells. Refillable DSSCs can also be used in tropical climates or specific types of farms and greenhouses where high humidity serves the purpose of rehydrating DSSCs.

  20. Plastic solar cells : understanding the special additive

    NARCIS (Netherlands)

    van Franeker, H.; Janssen, R.A.J.

    2015-01-01

    Solar cells use freely available sunlight to make electricity. At the present time, solar electricity does not come cheap, because solar panels are rather expensive. Now imagine that we could reduce costs by printing solar panels like we print newspapers! We can do just that with plastic solar

  1. Characterization of multicrystalline solar cells

    International Nuclear Information System (INIS)

    Malik, A.Q.; Chong Chew Hah; Chan Siang Khwang; Tan Kha Sheng; Lim Chee Ming

    2006-01-01

    The evaluation and assessment of the performance of photovoltaic (PV) cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Most noticeable of all these parameters in the PV conversion efficiency η, defined as the maximum electrical power P max produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (Sc). These conditions refer to the spectrum (AM 1.5), solar radiation intensity (1000 Wm -2 ), cell temperature (25 ± 2 degree C) and wind speed (2 mph). Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstrate that the short circuit current (I SC ) of the solar cell decreases when irradiance is less than 1000 Wm -2 irrespective of the working temperature of the cell

  2. Characterisation of multicrystalline solar cells

    Directory of Open Access Journals (Sweden)

    A.Q. Malik

    2017-10-01

    Full Text Available The evaluation and assessment of the performance of photovoltaic (PV cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Mo st noticeable of all these parameters is the PV conversion efficiency η, defined as the maximum electrical power Pmax produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (STC. These conditions refer to the spectrum (AM 1.5, solar radiation intensity (1000 Wm-2, cell temperature (25 ±2oC and wind speed (2 mph. Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstratethat the short circuit current (ISC of the solar cell decreases when irradiance is less than 1000 Wm-2 irrespective of the working temperature of the cell.

  3. Computational Infrastructure for Geodynamics (CIG)

    Science.gov (United States)

    Gurnis, M.; Kellogg, L. H.; Bloxham, J.; Hager, B. H.; Spiegelman, M.; Willett, S.; Wysession, M. E.; Aivazis, M.

    2004-12-01

    Solid earth geophysicists have a long tradition of writing scientific software to address a wide range of problems. In particular, computer simulations came into wide use in geophysics during the decade after the plate tectonic revolution. Solution schemes and numerical algorithms that developed in other areas of science, most notably engineering, fluid mechanics, and physics, were adapted with considerable success to geophysics. This software has largely been the product of individual efforts and although this approach has proven successful, its strength for solving problems of interest is now starting to show its limitations as we try to share codes and algorithms or when we want to recombine codes in novel ways to produce new science. With funding from the NSF, the US community has embarked on a Computational Infrastructure for Geodynamics (CIG) that will develop, support, and disseminate community-accessible software for the greater geodynamics community from model developers to end-users. The software is being developed for problems involving mantle and core dynamics, crustal and earthquake dynamics, magma migration, seismology, and other related topics. With a high level of community participation, CIG is leveraging state-of-the-art scientific computing into a suite of open-source tools and codes. The infrastructure that we are now starting to develop will consist of: (a) a coordinated effort to develop reusable, well-documented and open-source geodynamics software; (b) the basic building blocks - an infrastructure layer - of software by which state-of-the-art modeling codes can be quickly assembled; (c) extension of existing software frameworks to interlink multiple codes and data through a superstructure layer; (d) strategic partnerships with the larger world of computational science and geoinformatics; and (e) specialized training and workshops for both the geodynamics and broader Earth science communities. The CIG initiative has already started to

  4. New mounting improves solar-cell efficiency

    Science.gov (United States)

    Shepard, N. F., Jr.

    1980-01-01

    Method boosts output by about 20 percent by trapping and redirecting solar radiation without increasing module depth. Mounted solar-cell array is covered with internally reflecting plate. Plate is attached to each cell by transparent adhesive, and space between cells is covered with layer of diffusely reflecting material. Solar energy falling on space between cells is diffused and reflected internally by plate until it is reflected onto solar cell.

  5. 13.7%-efficient Zn(Se,OH){sub x}/Cu(In,Ga)(S,Se){sub 2} thin-film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Ennaoui, A. [Hahn-Meitner-Institut, Bereich Physikalische Chemie, Berlin (Germany); Blieske, U.; Lux-Steiner, M.Ch. [Hahn-Meitner-Institut, Bereich Festkoerperphysik, Berlin (Germany)

    1998-12-01

    Cu(In,Ga)Se{sub 2} (CIGS) and related semiconducting compounds have demonstrated their high potential for high-efficiency thin-film solar cells. The highest efficiency for CIGS based thin-film solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as chemical based deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, Zn(Se,OH){sub x} buffer layers were deposited by CBD on polycrystalline Cu(In,Ga)(S,Se){sub 2} (CIGSS). A total-area conversion efficiency of 13.7% was certified by the Fraunhofer Institute for Solar Energy Systems. The CIGSS absorber was fabricated by Siemens Solar Industries (California). For device optimisation, the thickness and good surface coverage were controlled by XPS-UPS photoemission spectroscopy. A Zn(Se,OH){sub x} thickness below 7 nm has been found to be optimum for achieving a homogeneous and compact buffer film on CIGSS, with open-circuit photovoltage V{sub oc} = 535 mV, fill factor FF = 70.76% and a high short-circuit photocurrent density J{sub sc} 36.1 mA cm{sup -2}. (Author)

  6. Improved open-circuit voltage in Cu(In,Ga)Se2 solar cells with high work function transparent electrodes

    International Nuclear Information System (INIS)

    Jäger, Timo; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N.; Schwenk, Johannes

    2015-01-01

    Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se 2 (CIGS) solar cells, leading to an open circuit voltage V OC enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V OC . Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V OC . Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V OC increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V OC of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability

  7. Development of Inorganic Solar Cells by Nanotechnology

    Institute of Scientific and Technical Information of China (English)

    Yafei Zhang; Huijuan Geng; Zhihua Zhou; Jiang Wu; Zhiming Wang; Yaozhong Zhang; Zhongli Li; Liying Zhang; Zhi Yang; Huey Liang Hwang

    2012-01-01

    Inorganic solar cells, as durable photovoltaic devices for harvesting electric energy from sun light,have received tremendous attention due to the fear of exhausting the earth’s energy resources and damaging the living environment due to greenhouse gases. Some recent developments in nanotechnology have opened up new avenues for more relevant inorganic solar cells produced by new photovoltaic conversion concepts and effective solar energy harvesting nanostructures. In this review, the multiple exciton generation effect solar cells, hot carrier solar cells, one dimensional material constructed asymmetrical schottky barrier arrays, noble nanoparticle induced plasmonic enhancement, and light trapping nanostructured semiconductor solar cells are highlighted.

  8. The optimization of molybdenum back contact films for Cu(In,Ga)Se{sub 2} solar cells by the cathodic arc ion plating method

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Yong Ki, E-mail: choyk@kitech.re.kr [Heat Treatment and Surface Engineering R and D Group, Korea Institute of Industrial Technology, Incheon 406-840 (Korea, Republic of); Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Gang Sam; Song, Young Sik; Lim, Tae Hong [Heat Treatment and Surface Engineering R and D Group, Korea Institute of Industrial Technology, Incheon 406-840 (Korea, Republic of); Jung, Donggeun [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-12-02

    Molybdenum back contact films for Cu(In,Ga)Se{sub 2} (CIGS) solar cells have been deposited using DC magnetron sputtering methods. The electronic pathway properties of the molybdenum film have been highly dependent on the working gas pressure in magnetron sputtering, which should be carefully controlled to obtain high conductivity and adhesion. A coating method, cathodic arc ion plating, was used for molybdenum back contact electrode fabrication. The aim of this work was to find a metallization method for CIGS solar cells, which has less sensitivity on the working pressure. The resistivity, grain size, growth structures, stress, and efficiency of the films in CIGS solar cells were investigated. The results reveal that the growth structures of the molybdenum films mainly affect the conductivity. The lowest electrical resistivity of the ion-plated molybdenum films was 6.9 μΩ-cm at a pressure of 0.7 Pa. The electrical resistivity variation showed a gently increasing slope with linearity under a working gas pressure of 13.3 Pa. However, a high value of the residual stress of over 1.3 GPa was measured. In order to reduce stress, titanium film was selected as the buffer layer material, and the back contact films were optimized by double-layer coating of two kinds of hetero-materials with arc ion plating. CIGS solar cells prepared molybdenum films to measure the efficiency and to examine the effects of the back contact electrode. The resistivity, grain size, and surface morphology of molybdenum films were measured by four-point probe, X-ray diffraction, and a scanning electron microscope. The residual stress of the films was calculated from differences in bending curvatures measured using a laser beam. - Highlights: • Molybdenum back contact films for Cu(In,Ga)Se{sub 2} solar cells were prepared by the cathodic arc ion plating. • The lowest electrical resistivity of molybdenum film was 6.9 μΩ-cm. • Titanium buffer layer reduced the compressive residual stress

  9. Neutral Color Semitransparent Microstructured Perovskite Solar Cells

    KAUST Repository

    Eperon, Giles E.; Burlakov, Victor M.; Goriely, Alain; Snaith, Henry J.

    2014-01-01

    Neutral-colored semitransparent solar cells are commercially desired to integrate solar cells into the windows and cladding of buildings and automotive applications. Here, we report the use of morphological control of perovskite thin films to form

  10. Semi-transparent solar cells

    International Nuclear Information System (INIS)

    Sun, J; Jasieniak, J J

    2017-01-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies. (topical review)

  11. Organic and hybrid solar cells

    CERN Document Server

    Huang, Hui

    2014-01-01

    This book delivers a comprehensive evaluation of organic and hybrid solar cells and identifies their fundamental principles and numerous applications. Great attention is given to the charge transport mechanism, donor and acceptor materials, interfacial materials, alternative electrodes, device engineering and physics, and device stability. The authors provide an industrial perspective on the future of photovoltaic technologies.

  12. Semi-transparent solar cells

    Science.gov (United States)

    Sun, J.; Jasieniak, J. J.

    2017-03-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

  13. Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Acciarri, M.; Binetti, S.; Le Donne, A.; Lorenzi, B.; Caccamo, L.; Miglio, L. [Dipartimento di Scienza dei Materiali e Solar Energy Research Center MIB-SOLAR, Universita di Milano Bicocca, Milan (Italy); Moneta, R.; Marchionna, S.; Meschia, M. [Voltasolar s.r.l, Turate (Italy)

    2011-08-15

    In this paper we report a new method for Cu(In,Ga)Se{sub 2} deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se{sub 2} has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm{sup 2} have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Plastic solar cells

    International Nuclear Information System (INIS)

    Brabec, C.J.; Sariciftci, N.S.; Hummelen, J.C.

    2001-01-01

    Recent developments in conjugated-polymer-based photovoltaic elements are reviewed. The photophysics of such photoactive devices is based on the photo-induced charge transfer from donor-type semiconducting conjugated polymers to acceptor-type conjugated polymers or acceptor molecules such as Buckminsterfullerene, C 60 . This photo-induced charge transfer is reversible, ultrafast (within 100 fs) with a quantum efficiency approaching unity, and the charge-separated state is metastable (up to milliseconds at 80 K). Being similar to the first steps in natural photosynthesis, this photo-induced electron transfer leads to a number of potentially interesting applications, which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are presented and their potential in terrestrial solar energy conversion discussed. Recent progress in the realization of improved photovoltaic elements with 3% power conversion efficiency is reported. (orig.)

  15. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  16. Challenges in amorphous silicon solar cell technology

    NARCIS (Netherlands)

    Swaaij, van R.A.C.M.M.; Zeman, M.; Korevaar, B.A.; Smit, C.; Metselaar, J.W.; Sanden, van de M.C.M.

    2000-01-01

    Hydrogenated amorphous silicon is nowadays extensively used for a range of devices, amongst others solar cells, Solar cell technology has matured over the last two decades and resulted in conversion efficiencies in excess of 15%. In this paper the operation of amorphous silicon solar cells is

  17. Analysis on the Performance of Copper Indium Gallium Selenide (CIGS Based Photovoltaic Thermal

    Directory of Open Access Journals (Sweden)

    Zulkepli Afzam

    2016-01-01

    Full Text Available This paper deals with the efficiency improvement of Copper Indium Gallium Selenide (CIGS Photovoltaic (PV and also solar thermal collector. Photovoltaic thermal (PV/T can improve overall efficiency for PV and also solve the problem of limited roof space at urban area. Objective of this study is to clarify the effect of mass flow rate on the efficiency of the PV/T system. A CIGS solar cell is used with rated output power 65 W and 1.18 m2 of area. 4 set of experiments were carried out, which were: thermal collector with 0.12 kg/s flow rate, PV/T with 0.12 kg/s flow rate, PV/T with 0.09 kg/s flow rate and PV. It was found that PV/T with 0.12 kg/s flow rate had the highest electrical efficiency, 2.92 %. PV/T with 0.09 kg/s flow rate had the lowest electrical efficiency, 2.68 %. It also had 2 % higher overall efficiency. The efficiency gained is low due to several factors. The rated output power of the PV is low for the area of 1.18 m2. The packing factor of the PV also need to be considered as it may not be operated at the optimal packing factor. Furthermore, aluminium sheet of the PV may affect the PV temperature due to high thermal conductivity. Further study on more values of mass flow rate and also other parameters that affect the efficiency of the PV/T is necessary.

  18. Hybrid emitter all back contact solar cell

    Science.gov (United States)

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  19. Zn{sub x}Cd{sub 1-} {sub x}S as a heterojunction partner for CuIn{sub 1-x}Ga{sub x}S{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Bhaskar [Florida Solar Energy Center, University of Central Florida, Cocoa, FL 32922 (United States); Vasekar, Parag [Florida Solar Energy Center, University of Central Florida, Cocoa, FL 32922 (United States)], E-mail: psvasekar@yahoo.com; Pethe, Shirish A.; Dhere, Neelkanth G. [Florida Solar Energy Center, University of Central Florida, Cocoa, FL 32922 (United States); Koishiyev, Galymzhan T. [Physics Department, Colorado State University, Fort Collins, CO 80523 (United States)

    2009-02-02

    Zinc cadmium sulfide (Zn{sub x}Cd{sub 1-x}S) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn{sub 1-x}Ga{sub x}S{sub 2} (CIGS2) solar cells. CIGS2/Zn{sub x}Cd{sub 1-x}S devices have also shown higher open circuit voltage, V{sub oc} indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher V{sub oc} can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/Zn{sub x}Cd{sub 1-x}S devices.

  20. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  1. Role of the buffer solution in the chemical deposition of CdS films for CIGS solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sooho; Kim, Donguk; Baek, Dohyun; Hong, Byoungyou; Yi, Junsin; Lee, Jaehyeong [Sungkyunkwan University, Suwon (Korea, Republic of); Park, Yongseob [Chosun College of Science and and Technology, Gwangju (Korea, Republic of); Choi, Wonseok [Hanbat National University, Daejeon (Korea, Republic of)

    2014-05-15

    In this work, the effects of NH{sub 4}Ac on the structural and the electro-optical properties of CdS films were investigated. CdS thin films were deposited on soda-lime glass and indium-tin-oxide (ITO) coated glass from a chemical bath containing 0.025 M cadmium acetate, 0 M ∼ 0.2 M ammonium acetate, 0.5 M thiourea, and ammonia. Cadmium acetate was the cadmium source, ammonium acetate served as a buffer, ammonia was the complexing agent, and thiourea was the source of sulfur. A commonly- available chemical bath deposition system was successfully modified to obtain precise control over the pH of the solution at 75 .deg. C during the deposition. Chemically deposited CdS films were studied by using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), optical transmittance, and electrical resistivity measurements.

  2. Multi-Material Front Contact for 19% Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Joop van Deelen

    2016-02-01

    Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

  3. Superior light trapping in thin film silicon solar cells through nano imprint lithography

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W.J.; Dorenkamper, M.S.; Schropp, R.E.I.; Pex, P.P.A.C.

    2013-10-15

    ECN and partners have developed a fabrication process based on nanoimprint lithography (NIL) of textures for light trapping in thin film solar cells such as thin-film silicon, OPV, CIGS and CdTe. The process can be applied in roll-to-roll mode when using a foil substrate or in roll-to-plate mode when using a glass substrate. The lacquer also serves as an electrically insulating layer for cells if steel foil is used as substrate, to enable monolithic series interconnection. In this paper we will show the superior light trapping in thin film silicon solar cells made on steel foil with nanotextured back contacts. We have made single junction a-Si and {mu}c-Si and a-Si/{mu}c-Si tandem cells, where we applied several types of nano-imprints with random and periodic structures. We will show that the nano-imprinted back contact enables more than 30% increase of current in comparison with non-textured back contacts and that optimized periodic textures outperform state-of-the-art random textures. For a-Si cells we obtained Jsc of 18 mA/cm{sup 2} and for {mu}c-Si cells more than 24 mA/cm{sup 2}. Tandem cells with a total Si absorber layer thickness of only 1350 nm have an initial efficiency of 11%.

  4. Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

    Science.gov (United States)

    Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

    2018-01-01

    This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

  5. Work Station For Inverting Solar Cells

    Science.gov (United States)

    Feder, H.; Frasch, W.

    1982-01-01

    Final work station along walking-beam conveyor of solar-array assembly line turns each pretabbed solar cell over, depositing it back-side-up onto landing pad, which centers cell without engaging collector surface. Solar cell arrives at inverting work station collector-side-up with two interconnect tabs attached to collector side. Cells are inverted so that second soldering operation takes place in plain view of operator. Inversion protects collector from damage when handled at later stages of assembly.

  6. Extended Temperature Solar Cell Technology Development

    Science.gov (United States)

    Landis, Geoffrey A.; Jenkins, Phillip; Scheiman, David; Rafaelle, Ryne

    2004-01-01

    Future NASA missions will require solar cells to operate both in regimes closer to the sun, and farther from the sun, where the operating temperatures will be higher and lower than standard operational conditions. NASA Glenn is engaged in testing solar cells under extended temperature ranges, developing theoretical models of cell operation as a function of temperature, and in developing technology for improving the performance of solar cells for both high and low temperature operation.

  7. Hybrid Perovskites: Prospects for Concentrator Solar Cells.

    Science.gov (United States)

    Lin, Qianqian; Wang, Zhiping; Snaith, Henry J; Johnston, Michael B; Herz, Laura M

    2018-04-01

    Perovskite solar cells have shown a meteoric rise of power conversion efficiency and a steady pace of improvements in their stability of operation. Such rapid progress has triggered research into approaches that can boost efficiencies beyond the Shockley-Queisser limit stipulated for a single-junction cell under normal solar illumination conditions. The tandem solar cell architecture is one concept here that has recently been successfully implemented. However, the approach of solar concentration has not been sufficiently explored so far for perovskite photovoltaics, despite its frequent use in the area of inorganic semiconductor solar cells. Here, the prospects of hybrid perovskites are assessed for use in concentrator solar cells. Solar cell performance parameters are theoretically predicted as a function of solar concentration levels, based on representative assumptions of charge-carrier recombination and extraction rates in the device. It is demonstrated that perovskite solar cells can fundamentally exhibit appreciably higher energy-conversion efficiencies under solar concentration, where they are able to exceed the Shockley-Queisser limit and exhibit strongly elevated open-circuit voltages. It is therefore concluded that sufficient material and device stability under increased illumination levels will be the only significant challenge to perovskite concentrator solar cell applications.

  8. Thermochromic halide perovskite solar cells

    Science.gov (United States)

    Lin, Jia; Lai, Minliang; Dou, Letian; Kley, Christopher S.; Chen, Hong; Peng, Fei; Sun, Junliang; Lu, Dylan; Hawks, Steven A.; Xie, Chenlu; Cui, Fan; Alivisatos, A. Paul; Limmer, David T.; Yang, Peidong

    2018-03-01

    Smart photovoltaic windows represent a promising green technology featuring tunable transparency and electrical power generation under external stimuli to control the light transmission and manage the solar energy. Here, we demonstrate a thermochromic solar cell for smart photovoltaic window applications utilizing the structural phase transitions in inorganic halide perovskite caesium lead iodide/bromide. The solar cells undergo thermally-driven, moisture-mediated reversible transitions between a transparent non-perovskite phase (81.7% visible transparency) with low power output and a deeply coloured perovskite phase (35.4% visible transparency) with high power output. The inorganic perovskites exhibit tunable colours and transparencies, a peak device efficiency above 7%, and a phase transition temperature as low as 105 °C. We demonstrate excellent device stability over repeated phase transition cycles without colour fade or performance degradation. The photovoltaic windows showing both photoactivity and thermochromic features represent key stepping-stones for integration with buildings, automobiles, information displays, and potentially many other technologies.

  9. Thermochromic halide perovskite solar cells.

    Science.gov (United States)

    Lin, Jia; Lai, Minliang; Dou, Letian; Kley, Christopher S; Chen, Hong; Peng, Fei; Sun, Junliang; Lu, Dylan; Hawks, Steven A; Xie, Chenlu; Cui, Fan; Alivisatos, A Paul; Limmer, David T; Yang, Peidong

    2018-03-01

    Smart photovoltaic windows represent a promising green technology featuring tunable transparency and electrical power generation under external stimuli to control the light transmission and manage the solar energy. Here, we demonstrate a thermochromic solar cell for smart photovoltaic window applications utilizing the structural phase transitions in inorganic halide perovskite caesium lead iodide/bromide. The solar cells undergo thermally-driven, moisture-mediated reversible transitions between a transparent non-perovskite phase (81.7% visible transparency) with low power output and a deeply coloured perovskite phase (35.4% visible transparency) with high power output. The inorganic perovskites exhibit tunable colours and transparencies, a peak device efficiency above 7%, and a phase transition temperature as low as 105 °C. We demonstrate excellent device stability over repeated phase transition cycles without colour fade or performance degradation. The photovoltaic windows showing both photoactivity and thermochromic features represent key stepping-stones for integration with buildings, automobiles, information displays, and potentially many other technologies.

  10. Semiconductor materials for solar photovoltaic cells

    CERN Document Server

    Wong-Ng, Winnie; Bhattacharya, Raghu

    2016-01-01

    This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

  11. Toward maximum transmittance into absorption layers in solar cells: investigation of lossy-film-induced mismatches between reflectance and transmittance extrema.

    Science.gov (United States)

    Chang, Yin-Jung; Lai, Chi-Sheng

    2013-09-01

    The mismatch in film thickness and incident angle between reflectance and transmittance extrema due to the presence of lossy film(s) is investigated toward the maximum transmittance design in the active region of solar cells. Using a planar air/lossy film/silicon double-interface geometry illustrates important and quite opposite mismatch behaviors associated with TE and TM waves. In a typical thin-film CIGS solar cell, mismatches contributed by TM waves in general dominate. The angular mismatch is at least 10° in about 37%-53% of the spectrum, depending on the thickness combination of all lossy interlayers. The largest thickness mismatch of a specific interlayer generally increases with the thickness of the layer itself. Antireflection coating designs for solar cells should therefore be optimized in terms of the maximum transmittance into the active region, even if the corresponding reflectance is not at its minimum.

  12. Nanostructures for Organic Solar Cells

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jarosław

    2016-01-01

    The experimental work in this thesis is focused on the fabrication of nanostructures that can be implemented in organic solar cell (OSC) architecture for enhancement of the device performance. Solar devices made from organic material are gaining increased attention, compared to their inorganic...... counterparts, due to the promising advantages, such as transparency, flexibility, ease of processing etc. But their efficiencies cannot be compared to the inorganic ones. Boosting the efficiency of OSCs by nanopatterning has thus been puzzling many researchers within the past years. Therefore various methods...... have been proposed to be used for developing efficient nanostructures for OSC devices such as, plasmonic structures, nanowires (NWs), gratings, nanorods etc. The nanostructuring methods applied though, do not offer the possibility of a cheap, rapid, reproducible and scalable fabrication. It is the aim...

  13. Hybrid density functional theory study of Cu(In1−xGaxSe2 band structure for solar cell application

    Directory of Open Access Journals (Sweden)

    Xu-Dong Chen

    2014-08-01

    Full Text Available Cu(In1−xGaxSe2 (CIGS alloy based thin film photovoltaic solar cells have attracted more and more attention due to its large optical absorption coefficient, long term stability, low cost and high efficiency. However, the previous theoretical investigation of this material with first principle calculation cannot fulfill the requirement of experimental development, especially the accurate description of band structure and density of states. In this work, we use first principle calculation based on hybrid density functional theory to investigate the feature of CIGS, with B3LYP applied in the CuIn1−xGaxSe2 stimulation of the band structure and density of states. We report the simulation of the lattice parameter, band gap and chemical composition. The band gaps of CuGaSe2, CuIn0.25Ga0.75Se2, CuIn0.5Ga0.5Se2, CuIn0.75Ga0.25Se2 and CuInSe2 are obtained as 1.568 eV, 1.445 eV, 1.416 eV, 1.275 eV and 1.205 eV according to our calculation, which agree well with the available experimental values. The band structure of CIGS is also in accordance with the current theory.

  14. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao, E-mail: tsong241@gmail.com; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States); Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-06-21

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These

  15. Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

    KAUST Repository

    Alsaggaf, Ahmed

    2015-07-01

    The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive

  16. Single source precursors for fabrication of I-III-VI{sub 2} thin-film solar cells via spray CVD

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, J.A.; Banger, K.K.; Jin, M.H.-C.; Harris, J.D.; Cowen, J.E.; Bohannan, E.W.; Switzer, J.A.; Buhro, W.E.; Hepp, A.F

    2003-05-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors can be used in either a hot, or cold-wall spray chemical vapour deposition reactor, for depositing CuInS{sub 2}, CuGaS{sub 2} and CuGaInS{sub 2} at reduced temperatures (400-450 sign C), which display good electrical and optical properties suitable for photovoltaic devices. X-ray diffraction studies, energy dispersive spectroscopy and scanning electron microscopy confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  17. Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

    Science.gov (United States)

    Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  18. Dye solar cells: a different approach to solar energy

    CSIR Research Space (South Africa)

    Le Roux, Lukas J

    2008-11-01

    Full Text Available An attractive and cheaper alternative to siliconbased photovoltaic (PV) cells for the conversion of solar light into electrical energy is to utilise dyeadsorbed, large-band-gap metal oxide materials such as TiO2 to absorb the solar light...

  19. Quantum Dots for Solar Cell Application

    Science.gov (United States)

    Poudyal, Uma

    Solar energy has been anticipated as the most important and reliable source of renewable energy to address the ever-increasing energy demand. To harvest solar energy efficiently, diverse kinds of solar cells have been studied. Among these, quantum dot sensitized solar cells have been an interesting group of solar cells mainly due to tunable, size-dependent electronic and optical properties of quantum dots. Moreover, doping these quantum dots with transition metal elements such as Mn opens avenue for improved performance of solar cells as well as for spin based technologies. In this dissertation, Mn-doped CdSe QDs (Mn-CdSe) have been synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method. They are used in solar cells to study the effect of Mn doping in the performance of solar cells. Incident photon to current-conversion efficiency (IPCE) is used to record the effect of Mn-doping. Intensity modulated photovoltage and photocurrent spectroscopy (IMVS/PS) has been used to study the carrier dynamics in these solar cells. Additionally, the magnetic properties of Mn-CdSe QDs is studied and its possible origin is discussed. Moreover, CdS/CdSe QDs have been used to study the effect of liquid, gel and solid electrolyte in the performance and stability of the solar cells. Using IPCE spectra, the time decay measurements are presented and the possible reactions between the QD and the electrolytes are explained.

  20. Unconventional device concepts for polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Veenstra, S.C.; Slooff, L.H.; Verhees, W.J.H.; Cobussen-Pool, E.M.; Lenzmann, F.O.; Kroon, J.M. [ECN Solar Energy, Petten (Netherlands); Sessolo, M.; Bolink, H.J. [Instituto de Ciencia Molecular, Universidad de Valencia, Valencia (Spain)

    2009-09-15

    The inclusion of metal-oxide layers in polymer solar cells enables the fabrication of a series of unconventional device architectures. These devices include: semi-transparent polymer solar cells, devices with inverted polarity, as well as devices with air stable electrodes. A proof-of-principle of these devices is presented. The anticipated benefits of these novel device structures over conventional polymer solar cells are discussed.

  1. Device operation of organic tandem solar cells

    NARCIS (Netherlands)

    Hadipour, A.; de Boer, B.; Blom, P. W. M.

    2008-01-01

    A generalized methodology is developed to obtain the current-voltage characteristic of polymer tandem solar cells by knowing the electrical performance of both sub cells. We demonstrate that the electrical characteristics of polymer tandem solar cells are correctly predicted for both the series and

  2. Solar Cells Using Quantum Funnels

    KAUST Repository

    Kramer, Illan J.

    2011-09-14

    Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer the possibility of funneling energy toward an acceptor. Here we report a quantum funnel that efficiently conveys photoelectrons from their point of generation toward an intended electron acceptor. Using this concept we build a solar cell that benefits from enhanced fill factor as a result of this quantum funnel. This concept addresses limitations on transport in soft condensed matter systems and leverages their advantages in large-area optoelectronic devices and systems. © 2011 American Chemical Society.

  3. Machine for welding solar cell connections

    Energy Technology Data Exchange (ETDEWEB)

    Lorans, D.Y.

    1977-08-09

    A machine for welding a connection wire over a solar cell electrode is described which comprises a base, a welding mount for the solar cell which is supported on the base, means for holding the solar cell on the welding mount, welding electrodes, means to lower the welding electrodes over the solar cell and the connection wire superimposed thereon, means for applying electric current pulses to said welding electrodes. It is characterized by the fact that it further comprises means for imparting to said mount an alternating transverse movement in relation to said base before and during the welding operation.

  4. Theoretical investigation on heterojunction solar cell

    International Nuclear Information System (INIS)

    Prema, K.; Geetha, K.

    1986-11-01

    The study of thin film solar cells has proved that the surface is rough. A two-dimensional method based on the integral equation technique to analyse thin film solar cells has been developed by DeMey et al. In this paper we present our analysis of a thin film solar cell using the above techniques. Variation of the minority carrier concentration, the saturation current and the junction current of the solar cell with surface roughness is presented. (author). 8 refs, 4 figs

  5. Influence of laser wavelength on the laser induced breakdown spectroscopy measurement of thin CuIn1−xGaxSe2 solar cell films

    International Nuclear Information System (INIS)

    Kim, Chan Kyu; In, Jung Hwan; Lee, Seok Hee; Jeong, Sungho

    2013-01-01

    Laser induced breakdown spectroscopy (LIBS) measurement of thin CuIn x Ga 1−x Se 2 (CIGS) films (1.2–1.9 μm) with varying Ga to In ratios was carried out using the fundamental (1064 nm) and second harmonic (532 nm) wavelength Nd:YAG lasers (τ = 5 ns, spot diameter = 150 μm, top-hat profile) in air. The concentration ratios of Ga to In, x Ga ≡ Ga/(Ga + In), of the CIGS samples ranged from 0.027 to 0.74 for which the band gap varied nearly proportionally to x Ga from 0.96 to 1.42. It was found that the LIBS signal of 1064 nm (1.17 eV) wavelength laser was significantly influenced by x Ga , whereas that of the 532 nm (2.34 eV) laser was consistent for all values of x Ga . The observed dependency of the LIBS signal intensity on the laser wavelength was attributed to the large difference of photon energy of the two wavelengths that changed the absorption of incident laser energy by the film. The 532 nm wavelength was found to be advantageous for multi-shot analysis that enabled depth profile analysis of the thin CIGS films and for improving measurement precision by averaging the multi-shot LIBS spectra. - Highlights: • The ablation characteristics of CIGS solar cell films change drastically with laser wavelength. • The LIBS signal intensity of 1064 nm wavelength laser depends strongly on Ga concentration. • Multi-shot LIBS analysis using a 532 nm laser is more advantageous for accuracy and consistency

  6. Commercialization of High Efficiency Low Cost CIGS Technology Based on Electroplating: Final Technical Progress Report, 28 September 2007 - 30 June 2009

    Energy Technology Data Exchange (ETDEWEB)

    Basol, B.

    2010-08-01

    This report describes SoloPower's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. The project focused on SoloPower's electrodeposition-based copper indium gallium (di)selenide (CIGS) technology. Under this subcontract, SoloPower improved the quality of its flexible metal substrates, increased the size of its solar cells from 0.5 cm2 to 120 cm2, increased the small-area cell efficiencies from near 11% to near 14%, demonstrated large-area cells, and developed a module manufacturing process.

  7. Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

    NARCIS (Netherlands)

    Lu, J.; Kovalgin, Alexeij Y.; van der Werf, Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

  8. Hydrazine-based deposition route for device-quality CIGS films

    International Nuclear Information System (INIS)

    Mitzi, David B.; Yuan, Min; Liu, Wei; Kellock, Andrew J.; Chey, S. Jay; Gignac, Lynne; Schrott, Alex G.

    2009-01-01

    A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C

  9. Hydrazine-based deposition route for device-quality CIGS films

    Energy Technology Data Exchange (ETDEWEB)

    Mitzi, David B. [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)], E-mail: dmitzi@us.ibm.com; Yuan, Min; Liu, Wei [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Kellock, Andrew J [IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 (United States); Chey, S Jay; Gignac, Lynne; Schrott, Alex G [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)

    2009-02-02

    A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C.

  10. Hydrogenated indium oxide window layers for high-efficiency Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jäger, Timo, E-mail: timo.jaeger@empa.ch; Romanyuk, Yaroslav E.; Nishiwaki, Shiro; Bissig, Benjamin; Pianezzi, Fabian; Fuchs, Peter; Gretener, Christina; Tiwari, Ayodhya N. [Empa – Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, Überlandstrasse 129, 8600 Dübendorf (Switzerland); Döbeli, Max [ETH Zürich, Swiss Federal Institute of Technology, Laboratory of Ion Beam Physics, Otto-Stern-Weg 5, 8093 Zürich (Switzerland)

    2015-05-28

    High mobility hydrogenated indium oxide is investigated as a transparent contact for thin film Cu(In,Ga)Se{sub 2} (CIGS) solar cells. Hydrogen doping of In{sub 2}O{sub 3} thin films is achieved by injection of H{sub 2}O water vapor or H{sub 2} gas during the sputter process. As-deposited amorphous In{sub 2}O{sub 3}:H films exhibit a high electron mobility of ∼50 cm{sup 2}/Vs at room temperature. A bulk hydrogen concentration of ∼4 at. % was measured for both optimized H{sub 2}O and H{sub 2}-processed films, although the H{sub 2}O-derived film exhibits a doping gradient as detected by elastic recoil detection analysis. Amorphous IOH films are implemented as front contacts in CIGS based solar cells, and their performance is compared with the reference ZnO:Al electrodes. The most significant feature of IOH containing devices is an enhanced open circuit voltage (V{sub OC}) of ∼20 mV regardless of the doping approach, whereas the short circuit current and fill factor remain the same for the H{sub 2}O case or slightly decrease for H{sub 2}. The overall power conversion efficiency is improved from 15.7% to 16.2% by substituting ZnO:Al with IOH (H{sub 2}O) as front contacts. Finally, stability tests of non-encapsulated solar cells in dry air at 80 °C and constant illumination for 500 h demonstrate a higher stability for IOH-containing devices.

  11. Nanosolar: Delivering Grid-Parity Solar Electricity

    Energy Technology Data Exchange (ETDEWEB)

    Sager, Brian [Nanosolar, Inc., San Jose, CA (United States)

    2012-05-31

    Nanosolar has developed proprietary technology based on Copper-Indium-Gallium-diSelenide (CIGS) absorber technology that allows the printing of this semiconductor material using a high-speed, high-throughput roll-to-roll manufacturing process. A central challenge in cost-effectively constructing a large-area CIGS-based solar cell or module is that the elements of the CIGS layer must be within a narrow stoichiometric ratio on nano-, meso-, and macroscopic length scale in all three dimensions in order for the resulting cell or module to be highly efficient. Achieving precise stoichiometric composition over relatively large substrate areas is however difficult using traditional vacuum-based deposition processes. For example, it is difficult to uniformly deposit compounds and/or alloys containing more than one element by sputtering or evaporation. Both techniques rely on deposition approaches that are limited to line-of-sight and limited-area sources, tending to result in poor surface coverage. Line-of-sight trajectories and limited-area sources can result in non-uniform three-dimensional distribution of the elements in all three dimensions and/or poor film-thickness uniformity over large areas. These non-uniformities can occur over the nano-, meso-, and/or macroscopic scales. Such non-uniformity also alters the local stoichiometric ratios of the absorber layer, decreasing the potential power conversion efficiency of the complete cell or module. Nanosolar has overcome these challenges by printing nanoparticulate CIGS precursor materials onto low-cost metal foil substrates, and performing a rapid thermal processing to convert the nanoparticulate coating into a CIGS absorber layer By locking in the appropriate stochiometry into the nanoparticulate precursor material, spatial uniformity is ensured in the coated layers, while printing at high speed and throughput minimizes solar cell cost.

  12. Scaling up ITO-Free solar cells

    NARCIS (Netherlands)

    Galagan, Y.O.; Coenen, E.W.C.; Zimmermann, B.; Slooff, L.H.; Verhees, W.J.H.; Veenstra, S.C.; Kroon, J.M.; Jørgensen, M.; Krebs, F.C.; Andriessen, H.A.J.M.

    2014-01-01

    Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm and

  13. Dye-sensitised solar cell (artificial photosynthesis)

    CSIR Research Space (South Africa)

    Le Roux, Lukas J

    2005-07-01

    Full Text Available A novel system that harnesses solar energy is the nano-crystalline TiO dye-sensitised solar cell (DSC), in conjunction with several new concepts, such as nanotechnology and molecular devices. An efficient and low-cost cell can be produced by using...

  14. Improved open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cells with high work function transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Jäger, Timo, E-mail: timo.jaeger@empa.ch; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N. [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, Überlandstrasse 129, 8600 Dübendorf (Switzerland); Schwenk, Johannes [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Nanoscale Materials Science, Überlandstrasse 129, 8600 Dübendorf (Switzerland)

    2015-06-14

    Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se{sub 2} (CIGS) solar cells, leading to an open circuit voltage V{sub OC} enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V{sub OC}. Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V{sub OC}. Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V{sub OC} increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V{sub OC} of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability.

  15. Predicted solar cell edge radiation effects

    International Nuclear Information System (INIS)

    Gates, M.T.

    1993-01-01

    The Advanced Solar Cell Orbital Test (ASCOT) will test six types of solar cells in a high energy proton environment. During the design of the experiment a question was raised about the effects of proton radiation incident on the edge of the solar cells and whether edge radiation shielding was required. Historical geosynchronous data indicated that edge radiation damage is not detectable over the normal end of life solar cell degradation; however because the ASCOT radiation environment has a much higher and more energetic fluence of protons, considerably more edge damage is expected. A computer analysis of the problem was made by modeling the expected radiation damage at the cell edge and using a network model of small interconnected solar cells to predict degradation in the cell's electrical output. The model indicated that the deepest penetration of edge radiation was at the top of the cell near the junction where the protons have access to the cell through the low density cell/cover adhesive layer. The network model indicated that the cells could tolerate high fluences at their edge as long as there was high electrical resistance between the edge radiated region and the contact system on top of the cell. The predicted edge radiation related loss was less than 2% of maximum power for GaAs/Ge solar cells. As a result, no edge radiation protection was used for ASCOT

  16. Fullerene surfactants and their use in polymer solar cells

    Science.gov (United States)

    Jen, Kwan-Yue; Yip, Hin-Lap; Li, Chang-Zhi

    2015-12-15

    Fullerene surfactant compounds useful as interfacial layer in polymer solar cells to enhance solar cell efficiency. Polymer solar cell including a fullerene surfactant-containing interfacial layer intermediate cathode and active layer.

  17. High Radiation Resistance IMM Solar Cell

    Science.gov (United States)

    Pan, Noren

    2015-01-01

    Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

  18. Organic Based Solar Cells with Morphology Control

    DEFF Research Database (Denmark)

    Andersen, Thomas Rieks

    The field of organic solar cells has in the last years gone through an impressive development with efficiencies reported up to 12 %. For organic solar cells to take the leap from primarily being a laboratory scale technology to being utilized as renewable energy source, several issues need...... Microscopy and as solar cells in a blend with PCBM. It was concluded that these particles did not show a potential large enough for continuous work due to a high material loss and low efficiency when applied in solar cells. The second method to achieve was preparation of pre-arranged morphology organic...... nanoparticles consisting of a blend of donor and acceptor in an aqueous dispersion, thereby addressing two of the issues remaining in the field of organic solar cells. This approach was used on six different polymers, which all had the ability to prepare aqueous nanoparticle inks. The morphology...

  19. Theoretical Analysis of Two Novel Hybrid Thermoelectric-Photovoltaic Systems Based on Cu₂ZnSnS₄ Solar Cells.

    Science.gov (United States)

    Lorenzi, Bruno; Contento, Gaetano; Sabatelli, Vincenzo; Rizzo, Antonella; Narducci, Dario

    2017-03-01

    The development and commercialization of Photovoltaic (PV) cells with good cost-efficiency trade-off not using critical raw materials (CRMs) is one of the strategies chosen by the European Community (EC) to address the Energy Roadmap 2050. In this context Cu2ZnSnS4 (CZTS) solar cells are attracting a major interest since they have the potential to combine low price with relatively high conversion efficiencies. Although a ≈9% lab scale efficiency has already been reported for CZTS this technology is still far from being competitive in terms of cost per peak-power (€/Wp) with other common materials. One possible near-future solution to increase the CZTS competiveness comes from thermoelectrics. Actually it has already been shown that Hybrid Thermoelectric-Photovoltaic Systems (HTEPVs) based on CIGS, another kesterite very similar to CZTS, can lead to a significant efficiency improvement. However it has been also clarified how the optimal hybridization strategy cannot come from the simple coupling of solar cells with commercial TEGs, but special layouts have to be implemented. Furthermore, since solar cell performances are well known to decrease with temperature, thermal decoupling strategies of the PV and TEG sections have to be taken. To address these issues, we developed a model for two different HTEPV solutions, both coupled with CZTS solar cells. In the first case we considered a Thermally-Coupled HTEPV device (TC-HTEPV) in which the TEG is placed underneath the solar cell and in thermal contact with it. The second system consists instead of an Optically-Coupled but thermally decoupled device (OC-HTEPV) in which part of the solar spectrum is focused by a non-imaging optical concentrator on the TEG hot side. For both solutions the model returns conversion efficiencies higher than that of the CZTS solar cell alone. Specifically, increases of ≈30% are predicted for both kind of systems considered.

  20. The Theory of Planned Behavior and E-cig Use: Impulsive Personality, E-cig Attitudes, and E-cig Use.

    Science.gov (United States)

    Hershberger, Alexandra; Connors, Miranda; Um, Miji; Cyders, Melissa A

    2018-04-01

    The current paper applied the Theory of Planned Behavior (TPB; Ajzen & Fishbein, 1988) to understand how impulsive personality traits and attitudes concerning e-cig use relate to the likelihood of electronic cigarette (e-cig) use. Seven hundred and fourteen participants (Mean age = 34.04, SD = 10.89, 48.6% female) completed cross-sectional measures of e-cig use attitudes (CEAC) and the Short UPPS-P Impulsive Behavior Scale. A structural path analysis suggested that urgency and deficits in conscientiousness were significantly related to e-cig attitudes (CFI = 0.99, TLI = 0.99, RMSEA = 0.02; urgency: β = 0.32, p = .001; deficits in conscientiousness: β = -0.48, p E-cig attitude scores were significantly higher for e-cig users than non-users, β = 0.85, p e-cig use. Findings provide initial support for a model in which impulsive traits are related to e-cig use through positive e-cig attitudes.

  1. Bonder for Solar-Cell Strings

    Science.gov (United States)

    Garwood, G.; Frasch, W.

    1982-01-01

    String bonder for solar-cell arrays eliminates tedious manual assembly procedure that could damage cell face. Vacuum arm picks up face-down cell from cell-inverting work station and transfers it to string conveyor without changing cell orientation. Arm is activated by signal from microprocessor.

  2. Tandem photovoltaic solar cells and increased solar energy conversion efficiency

    Science.gov (United States)

    Loferski, J. J.

    1976-01-01

    Tandem photovoltaic cells, as proposed by Jackson (1955) to increase the efficiency of solar energy conversion, involve the construction of a system of stacked p/n homojunction photovoltaic cells composed of different semiconductors. It had been pointed out by critics, however, that the total power which could be extracted from the cells in the stack placed side by side was substantially greater than the power obtained from the stacked cells. A reexamination of the tandem cell concept in view of the development of the past few years is conducted. It is concluded that the use of tandem cell systems in flat plate collectors, as originally envisioned by Jackson, may yet become feasible as a result of the development of economically acceptable solar cells for large scale terrestrial power generation.

  3. Solar Cell Panel and the Method for Manufacturing the Same

    Science.gov (United States)

    Richards, Benjamin C. (Inventor); Sarver, Charles F. (Inventor); Naidenkova, Maria (Inventor)

    2016-01-01

    According to an aspect of an embodiment of the present disclosure, there is provided a solar cell panel and a method for manufacturing the same. The solar cell panel comprises: a solar cell for generating electric power from sunlight; a coverglass for covering the solar cell; transparent shims, which are disposed between the solar cell and the coverglass at the points where the distance between the solar cell and the coverglass needs to be controlled, and form a space between the solar cell and the coverglass; and adhesive layer, which fills the space between the solar cell and the coverglass and has the thickness the same as that of the transparent shims.

  4. Deuterium markers in CdS and Zn(O,S) buffer layers deposited by solution growth for Cu(In,Ga)Se{sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Witte, Wolfram; Eicke, Axel; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany); Souza, Roger A. de; Martin, Manfred [Institute of Physical Chemistry, RWTH Aachen University (Germany)

    2017-12-15

    This contribution describes an easy and cheap approach to introduce deuterium (D) as an isotopic marker into the commonly used buffer layer materials CdS and Zn(O,S) for Cu(In,Ga)Se{sub 2} (CIGS) thin-film solar cells. D was successfully incorporated during the growth of Zn(O,S) and CdS buffer layers by chemical bath deposition (CBD) with D{sub 2}O. CIGS solar cells prepared with D-containing buffers grown by CBD exhibit power conversion efficiencies above 16%, that is, the D content has no detrimental effect on the performance or other solar cell parameters of the devices. With depth profiles obtained by time-of-flight secondary ion mass spectrometry (ToF-SIMS) we clearly detect the intentionally incorporated D within the solution-grown Zn(O,S) buffer. Assuming that D is present as OD, we compare the amount of OD within the Zn(O,S) layer with the amount of OH on the surface of the subsequent sputtered (Zn,Mg)O layer. Possible applications and future experiments of the method inserting isotopic markers such as D in functional layers of chalcopyrite-type thin-film solar cells and beyond are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Industrial n-type solar cells with >20% cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

    2013-03-15

    To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

  6. Recent Advances in Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Thomas Kietzke

    2007-01-01

    Full Text Available Solar cells based on organic semiconductors have attracted much attention. The thickness of the active layer of organic solar cells is typically only 100 nm thin, which is about 1000 times thinner than for crystalline silicon solar cells and still 10 times thinner than for current inorganic thin film cells. The low material consumption per area and the easy processing of organic semiconductors offer a huge potential for low cost large area solar cells. However, to compete with inorganic solar cells the efficiency of organic solar cells has to be improved by a factor of 2-3. Several organic semiconducting materials have been investigated so far, but the optimum material still has to be designed. Similar as for organic light emitting devices (OLED small molecules are competing with polymers to become the material of choice. After a general introduction into the device structures and operational principles of organic solar cells the three different basic types (all polymer based, all small molecules based and small molecules mixed with polymers are described in detail in this review. For each kind the current state of research is described and the best of class reported efficiencies are listed.

  7. Semiconductor quantum dot-sensitized solar cells.

    Science.gov (United States)

    Tian, Jianjun; Cao, Guozhong

    2013-10-31

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

  8. Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Kohout, Michal; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2013-01-01

    Roč. 16, č. 2 (2013), s. 314-319 ISSN 1203-8407 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HIPIMS * selenization * nanocrystals * solar energy * sputtering * thin films Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.106, year: 2013 http://www.ingentaconnect.com/content/stn/jaots/2013/00000016/00000002/art00015

  9. Development and Prospect of Nanoarchitectured Solar Cells

    OpenAIRE

    Zhang, Bo; Xie, Wenxu; Xiang, Yong

    2015-01-01

    This paper gives an overview of the development and prospect of nanotechnologies utilized in the solar cell applications. Even though it is not clearly pointed out, nanostructures indeed have been used in the fabrication of conventional solar cells for a long time. However, in those circumstances, only very limited benefits of nanostructures have been used to improve cell performance. During the last decade, the development of the photovoltaic device theory and nanofabrication technology enab...

  10. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    Directory of Open Access Journals (Sweden)

    Hongxia Wang

    2011-01-01

    Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

  11. NREL Scientists Report First Solar Cell Producing More Electrons In

    Science.gov (United States)

    measured in operating quantum dot solar cells at low light intensity; these cells showed significant power Photocurrent Than Solar Photons Entering Cell | News | NREL NREL Scientists Report First Solar Cell Producing More Electrons In Photocurrent Than Solar Photons Entering Cell News Release: NREL

  12. Assessment of market possibilities for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Djukanovic, S. [Advanced School of Business Novi Sad (Czechoslovakia)

    2004-07-01

    Global heating increases profitability of solar energy application in the Balkans. The most important market segments for wider solar cells utilization in Yugoslavia (Serbia and Montenegro) are solar pumps for irrigation in agriculture, traffic lights, lighting of weekend houses, air-conditioning, telecommunications, electric vehicles, solar hydro-electric power plants, sports centers and schools and orthodox monasteries. In addition to these applications of solar modules of relatively high capacity, a wide scope of applications of mini solar modules in consumer goods is given serious consideration (flashlights, bicycle lights, fan caps, beach hats, solar parasols, toys for children, solar watches, minicomputers, walkmans and alike). In this paper is projected gradually increase of solar cells applications in Yugoslavia, from 772 kW in 2006., to 3,901 kW installed photovoltaic power in 2010. year. The largest parts of this projected 3.9 MW in 2010., ought to be solar pumps (498 kW), telecommunications (470 kW) and traffic lights (468 kW). (orig.)

  13. In-situ sol-gel synthesis and thin film deposition of Cu(In,Ga)(S,Se)2 solar cells

    International Nuclear Information System (INIS)

    Oliveira, L.; Lyubenova, T.; Marti, R.; Fraga, D.; Rey, A.; Carda, J.; Kozhukharov, V.

    2013-01-01

    Full text: Nowadays chalcogenide-based solar cells, like Cu(In,Ga)Se 2 , are competitive in the photovoltaic market, due to its improved performances like higher efficiency (20,3%), long-time stability and excellent durability. In addition, CIGS stand out with an exceptionally high absorption coefficient (more than; 105/cm for 1.5eV) and higher energy photons. These properties make it an excellent candidate as an absorber material for large scale production of photovoltaic modules for building-integrated applications. Traditional methods of manufacture involve vacuum processes including co-evaporation and sputtering that increase production costs. With the aim to lower the expenses by using non-vacuum solution processes we propose an ‘in-situ’ sol-gel synthesis route and direct thin film deposition in the same production step. As a result, we achieved better stoichiometric control, simplicity in the procedure and cost reduction. In this work we describe a procedure to obtain CIGS absorber layer by soft chemistry technique and further deposition onto different substrates. Preparation parameters like precursors, chemical composition, solvents, thermal treatment factors (temperature, time, and atmosphere) were detailed studied. Finally, the resulting materials were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) coupled with Energy dispersive X-ray analysis (EDAX), UV-VIS Spectroscopy among others.; key words: sol-gel synthesis, thin film deposition, photovoltaic modules, solar cells

  14. Scaling Up ITO-free solar cells

    DEFF Research Database (Denmark)

    Galagan, Yulia; Coenen, Erica W. C.; Zimmermann, Birger

    2014-01-01

    Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm...... resistances. The performance of ITO-free organic solar cells with different dimensions and different electrode resistances are evaluated for different light intensities. The current generation and electric potential distribution are found to not be uniformly distributed in large-area devices at simulated 1...

  15. Cheap electricity with autonomous solar cell systems

    International Nuclear Information System (INIS)

    Ouwens, C.D.

    1993-01-01

    A comparison has been made between the costs of an autonomous solar cell system and a centralized electricity supply system. In both cases investment costs are the main issue. It is shown that for households in densely populated sunny areas, the use of autonomous solar cell systems is - even with today's market prices - only as expensive or even cheaper than a grid connection, as long as efficient electric appliances are used. The modular nature of solar cell systems makes it possible to start with any number of appliances, depending on the amount of money available to be spent. (author)

  16. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  17. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  18. Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

    Science.gov (United States)

    Wang, Shu-Yi

    To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance

  19. Development and Prospect of Nanoarchitectured Solar Cells

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2015-01-01

    Full Text Available This paper gives an overview of the development and prospect of nanotechnologies utilized in the solar cell applications. Even though it is not clearly pointed out, nanostructures indeed have been used in the fabrication of conventional solar cells for a long time. However, in those circumstances, only very limited benefits of nanostructures have been used to improve cell performance. During the last decade, the development of the photovoltaic device theory and nanofabrication technology enables studies of more complex nanostructured solar cells with higher conversion efficiency and lower production cost. The fundamental principles and important features of these advanced solar cell designs are systematically reviewed and summarized in this paper, with a focus on the function and role of nanostructures and the key factors affecting device performance. Among various nanostructures, special attention is given to those relying on quantum effect.

  20. Recent Advances in Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Umer Mehmood

    2014-01-01

    Full Text Available Solar energy is an abundant and accessible source of renewable energy available on earth, and many types of photovoltaic (PV devices like organic, inorganic, and hybrid cells have been developed to harness the energy. PV cells directly convert solar radiation into electricity without affecting the environment. Although silicon based solar cells (inorganic cells are widely used because of their high efficiency, they are rigid and manufacturing costs are high. Researchers have focused on organic solar cells to overcome these disadvantages. DSSCs comprise a sensitized semiconductor (photoelectrode and a catalytic electrode (counter electrode with an electrolyte sandwiched between them and their efficiency depends on many factors. The maximum electrical conversion efficiency of DSSCs attained so far is 11.1%, which is still low for commercial applications. This review examines the working principle, factors affecting the efficiency, and key challenges facing DSSCs.

  1. Indium oxide/n-silicon heterojunction solar cells

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  2. Optical characterization of In{sub 2}S{sub 3} solar cell buffer layers grown by chemical bath and physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Trigo, J.F.; Asenjo, B.; Herrero, J.; Gutierrez, M.T. [Department of Energy, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain)

    2008-09-15

    In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In{sub 2}S{sub 3} buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In{sub 2}S{sub 3} thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell. (author)

  3. PbSe Nanocrystal Excitonic Solar Cells

    KAUST Repository

    Choi, Joshua J.; Lim, Yee-Fun; Santiago-Berrios, Mitk’ El B.; Oh, Matthew; Hyun, Byung-Ryool; Sun, Liangfeng; Bartnik, Adam C.; Goedhart, Augusta; Malliaras, George G.; Abruña, Héctor D.; Wise, Frank W.; Hanrath, Tobias

    2009-01-01

    that Is distinct from previously reported Schottky devices and consistent with signatures of excitonic solar cells. Remarkably, despite the limitation of planar junction structure, and without film thickness optimization, the best performing device shows a 1-sun

  4. Black Silicon Solar Cells with Black Ribbons

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io

    2016-01-01

    We present the combination of mask-less reactive ion etch (RIE) texturing and blackened interconnecting ribbons as a method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon made by mask-less reactive ion etching has total, average...... in the range 15.7-16.3%. The KOH-textured reference cell had an efficiency of 17.9%. The combination of black Si and black interconnecting ribbons may result in aesthetic, all-black panels based on conventional, front-contacted silicon solar cells....... reflectance below 0.5% across a 156x156 mm2 silicon (Si) wafer. Black interconnecting ribbons were realized by oxidizing copper resulting in reflectance below 3% in the visible wavelength range. Screen-printed Si solar cells were realized on 156x156 mm2 black Si substrates with resulting efficiencies...

  5. Diketopyrrolopyrrole polymers for organic solar cells

    NARCIS (Netherlands)

    Li, Wei Wei; Hendriks, K.H.; Wienk, M.M.; Janssen, R.A.J.

    2016-01-01

    Conspectus Conjugated polymers have been extensively studied for application in organic solar cells. In designing new polymers, particular attention has been given to tuning the absorption spectrum, molecular energy levels, crystallinity, and charge carrier mobility to enhance performance. As a

  6. Silicon Germanium Quantum Well Solar Cell

    Data.gov (United States)

    National Aeronautics and Space Administration — A single crystal SiGe has enormous potentials for high performance chips and solar cells. This project seeks to fabricate a rudimentary but 1st cut quantum-well...

  7. A Bicontinuous Double Gyroid Hybrid Solar Cell

    KAUST Repository

    Crossland, Edward J. W.; Kamperman, Marleen; Nedelcu, Mihaela; Ducati, Caterina; Wiesner, Ulrich; Smilgies, Detlef -M.; Toombes, Gilman E. S.; Hillmyer, Marc A.; Ludwigs, Sabine; Steiner, Ullrich; Snaith, Henry J.

    2009-01-01

    We report the first successful application of an ordered bicontinuous gyroid semiconducting network in a hybrid bulk heterojunction solar cell. The freestanding gyroid network is fabricated by electrochemical deposition into the 10 nm wide voided

  8. Bismuth-doped Cu(In,Ga)Se{sub 2} absorber prepared by multi-layer precursor method and its solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Chantana, Jakapan; Hironiwa, Daisuke; Minemoto, Takashi [Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan); Watanabe, Taichi; Teraji, Seiki; Kawamura, Kazunori [Environment and Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2015-06-15

    Bismuth (Bi)-doped Cu(In,Ga)Se{sub 2} (CIGS) films were prepared by the so-called ''multi-layer precursor method'', obtained by depositing them onto Bi layers with various thicknesses on Mo-coated soda-lime glass (SLG) substrates. Material composition (Cu, In, Ga, and Se) profiles of the CIGS films are almost identical, whereas sodium (Na) is reduced, when Bi thickness is increased. Moreover, the incorporation of Bi into the CIGS film is enhanced with thicker Bi layer. With Bi thickness from 0 to 70 nm, the 2.4-μm-thick CIGS absorbers demonstrate the increase in CIGS grain size, carrier lifetime, and carrier concentration, thus improving their cell performances, especially open-circuit voltage (V{sub OC}). With further increase in Bi thickness of above 70 nm, the CIGS films show the deterioration of CIGS film quality owing to the formation of Bi compounds such as Bi, BiSe, and Bi{sub 4}Se{sub 3}. Consequently, Bi-doped CIGS absorber with thickness of 2.4 μm, prepared with the 70-nm-thick Bi layer on Mo-coated SLG substrate, gives rise to the improvement of photovoltaic performances, especially V{sub OC}. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Bismuth-doped Cu(In,Ga)Se2 absorber prepared by multi-layer precursor method and its solar cell

    International Nuclear Information System (INIS)

    Chantana, Jakapan; Hironiwa, Daisuke; Minemoto, Takashi; Watanabe, Taichi; Teraji, Seiki; Kawamura, Kazunori

    2015-01-01

    Bismuth (Bi)-doped Cu(In,Ga)Se 2 (CIGS) films were prepared by the so-called ''multi-layer precursor method'', obtained by depositing them onto Bi layers with various thicknesses on Mo-coated soda-lime glass (SLG) substrates. Material composition (Cu, In, Ga, and Se) profiles of the CIGS films are almost identical, whereas sodium (Na) is reduced, when Bi thickness is increased. Moreover, the incorporation of Bi into the CIGS film is enhanced with thicker Bi layer. With Bi thickness from 0 to 70 nm, the 2.4-μm-thick CIGS absorbers demonstrate the increase in CIGS grain size, carrier lifetime, and carrier concentration, thus improving their cell performances, especially open-circuit voltage (V OC ). With further increase in Bi thickness of above 70 nm, the CIGS films show the deterioration of CIGS film quality owing to the formation of Bi compounds such as Bi, BiSe, and Bi 4 Se 3 . Consequently, Bi-doped CIGS absorber with thickness of 2.4 μm, prepared with the 70-nm-thick Bi layer on Mo-coated SLG substrate, gives rise to the improvement of photovoltaic performances, especially V OC . (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Effect of solar-terrestrial phenomena on solar cell's efficiency

    International Nuclear Information System (INIS)

    Zahee, K. B.; Ansari, W.A.; Raza, S.M.M.

    2012-01-01

    It is assumed that the solar cell efficiency of PV device is closely related to the solar irradiance, consider the solar parameter Global Solar Irradiance (G) and the meteorological parameters like daily data of Earth Skin Temperature (E), Average Temperature (T), Relative Humidity (H) and Dew Frost Point (D), for the coastal city Karachi and a non-coastal city Jacobabad, K and J is used as a subscripts for parameters of Karachi and Jacobabad respectively. All variables used here are dependent on the location (latitude and longitude) of our stations except G. To employ ARIMA modeling, the first eighteen years data is used for modeling and forecast is done for the last five years data. In most cases results show good correlation among monthly actual and monthly forecasted values of all the predictors. Next, multiple linear regression is employed to the data obtained by ARIMA modeling and models for mean monthly observed G values are constructed. For each station, two equations are constructed, the R values are above 93% for each model, showing adequacy of the fit. Our computations show that solar cell efficiency can be increased if better modeling for meteorological predictors governs the process. (author)

  11. Perovskite Solar Cells: Progress and Advancements

    Directory of Open Access Journals (Sweden)

    Naveen Kumar Elumalai

    2016-10-01

    Full Text Available Organic–inorganic hybrid perovskite solar cells (PSCs have emerged as a new class of optoelectronic semiconductors that revolutionized the photovoltaic research in the recent years. The perovskite solar cells present numerous advantages include unique electronic structure, bandgap tunability, superior charge transport properties, facile processing, and low cost. Perovskite solar cells have demonstrated unprecedented progress in efficiency and its architecture evolved over the period of the last 5–6 years, achieving a high power conversion efficiency of about 22% in 2016, serving as a promising candidate with the potential to replace the existing commercial PV technologies. This review discusses the progress of perovskite solar cells focusing on aspects such as superior electronic properties and unique features of halide perovskite materials compared to that of conventional light absorbing semiconductors. The review also presents a brief overview of device architectures, fabrication methods, and interface engineering of perovskite solar cells. The last part of the review elaborates on the major challenges such as hysteresis and stability issues in perovskite solar cells that serve as a bottleneck for successful commercialization of this promising PV technology.

  12. Concentrated sunlight for organic solar cells

    DEFF Research Database (Denmark)

    Tromholt, Thomas

    2010-01-01

    . A high solar intensity study of inverted P3HT:PCBM solar cells is presented. Performance peak positions were found to be in the range of 1-5 suns, with smaller cells peaking at higher solar concentrations. Additionally, concentrated sunlight is demonstrated as a practical tool for accelerated stability...... were degraded resulting in acceleration factors in the range of 19-55. This shows that concentrated sunlight can be used as qualitatively to determine the lifetime of polymers under highly accelerated conditions....

  13. Method to manufacture solar cells

    International Nuclear Information System (INIS)

    Hanschmann, H.

    1978-01-01

    An attempt has been made to outwit physics and to improve the solar energy utilization in households and space ships by means of power storers, gravitational drive and other futuristic means. (DG) [de

  14. Nanoparticle Solar Cell Final Technical Report

    Energy Technology Data Exchange (ETDEWEB)

    Breeze, Alison, J; Sahoo, Yudhisthira; Reddy, Damoder; Sholin, Veronica; Carter, Sue

    2008-06-17

    The purpose of this work was to demonstrate all-inorganic nanoparticle-based solar cells with photovoltaic performance extending into the near-IR region of the solar spectrum as a pathway towards improving power conversion efficiencies. The field of all-inorganic nanoparticle-based solar cells is very new, with only one literature publication in the prior to our project. Very little is understood regarding how these devices function. Inorganic solar cells with IR performance have previously been fabricated using traditional methods such as physical vapor deposition and sputtering, and solution-processed devices utilizing IR-absorbing organic polymers have been investigated. The solution-based deposition of nanoparticles offers the potential of a low-cost manufacturing process combined with the ability to tune the chemical synthesis and material properties to control the device properties. This work, in collaboration with the Sue Carter research group at the University of California, Santa Cruz, has greatly expanded the knowledge base in this field, exploring multiple material systems and several key areas of device physics including temperature, bandgap and electrode device behavior dependence, material morphological behavior, and the role of buffer layers. One publication has been accepted to Solar Energy Materials and Solar Cells pending minor revision and another two papers are being written now. While device performance in the near-IR did not reach the level anticipated at the beginning of this grant, we did observe one of the highest near-IR efficiencies for a nanoparticle-based solar cell device to date. We also identified several key parameters of importance for improving both near-IR performance and nanoparticle solar cells in general, and demonstrated multiple pathways which showed promise for future commercialization with further research.

  15. Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

    Science.gov (United States)

    Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

    2010-09-01

    We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

  16. Advanced Solar Cells for Satellite Power Systems

    Science.gov (United States)

    Flood, Dennis J.; Weinberg, Irving

    1994-01-01

    The multiple natures of today's space missions with regard to operational lifetime, orbital environment, cost and size of spacecraft, to name just a few, present such a broad range of performance requirements to be met by the solar array that no single design can suffice to meet them all. The result is a demand for development of specialized solar cell types that help to optimize overall satellite performance within a specified cost range for any given space mission. Historically, space solar array performance has been optimized for a given mission by tailoring the features of silicon solar cells to account for the orbital environment and average operating conditions expected during the mission. It has become necessary to turn to entirely new photovoltaic materials and device designs to meet the requirements of future missions, both in the near and far term. This paper will outline some of the mission drivers and resulting performance requirements that must be met by advanced solar cells, and provide an overview of some of the advanced cell technologies under development to meet them. The discussion will include high efficiency, radiation hard single junction cells; monolithic and mechanically stacked multiple bandgap cells; and thin film cells.

  17. 24% efficient PERL structure silicon solar cells

    International Nuclear Information System (INIS)

    Zhao, J.; Wang, A.; Green, M.A.

    1990-01-01

    This paper reports that the performance of silicon solar cells have been significantly improved using an improved PERL (passivated emitter, rear locally-diffused) cell structure. This structure overcomes deficiencies in an earlier PERC (passivated emitter and rear cell) cell structure by locally diffusing boron into contact areas at the rear of the cells. Terrestrial energy conversion efficiencies up to 24% are reported for silicon cells for the first time. Air Mass O efficiencies approach 21%. The first batches of concentrator cells using the new structure have demonstrated significant improvement with 29% efficient concentrator silicon cells expected in the near future

  18. In-situ X-ray Nanocharacterization of Defect Kinetics in Chalcogenide Solar Cell Materials

    Energy Technology Data Exchange (ETDEWEB)

    Bertoni, Mariana [Arizona State Univ., Tempe, AZ (United States); Lai, Barry [Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Masser, Jorg [Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Buonassisi, Tonio [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2016-09-21

    For decades the optimization of polycrystalline absorbers has been done using an Edisonian approach, where trial and error and complex design of experiments in large parameter spaces have driven efficiencies to the record values we see today – CIGS at 22.5%, 22.1% for CdTe, 21.3% for high purity multi-crystalline silicon. Appropriate growth parameters are critical to ensure good quality crystals with low concentration of structural defects - low dislocation density and large grain sizes. However, to bridge the gap between the efficiencies today and the fundamental Shockley-Queisser limit for these materials a much more fundamental understanding of the role and interaction between composition, structure, defect density and electrical properties is required. In recent years multiple novel characterization techniques have shown the potential that nanoscale characterization can have in deciphering the composition of grain boundaries in materials like CIGS and CdTe. However, high resolution has come at the cost of small sampling areas and number of specimens, making it extremely difficult to draw conclusions based on the characteristic small sampling sizes. The missing links thus far have been: (1) the lack of statistical meaningfulness of the nanosclae studies and (2) the direct correlation of compositional variations to electrical performance with nanoscale resolution. In this work we present the use of synchrotron-based nano-X-ray fluorescence microscopy (nano-XRF), x-ray absorption nanospectroscopy (nano-XAS) coupled with nano-x-ray beam induced current (nano-XBIC) as ideal tools for investigating elemental, chemical and electrical properties of large areas of solar cell materials at the sub-micron scale with very high sensitivity. We show how the technique can provide statistical valuable information regarding the elemental segregation in CIGS and the direct correlation to current collection. For example, we demonstrate that Cu and Ga (and with that, CGI and GGI

  19. Morphology control and device optimization for efficient organic solar cells

    NARCIS (Netherlands)

    Gevaerts, Veronique

    2013-01-01

    Renewable energy is paramount for a sustainable global future. Solar cells convert solar light directly into electricity and are therefore of great interest in meeting the world’s energy demand. Currently crystalline silicon solar cells dominate the market. Solution processed organic solar cells can

  20. Investigation of solar cell radiation damage

    International Nuclear Information System (INIS)

    Bernard, J.; Reulet, R.; Arndt, R.A.

    1974-01-01

    Development of communications satellites has led to the requirement for a greater and longer lived solar cell power source. Accordingly, studies have been undertaken with the aim of determining which solar cell array provides the greatest power at end of life and the amount of degradation. Investigation of the damage done to thin silicon and thin film CdS solar cells is being carried out in two steps. First, irradiations were performed singly with 0.15, 1.0 and 2.0MeV electrons and 0.7, 2.5 and 22MeV proton. Solar cells and their cover materials were irradiated separately in order to locate the sites of the damage. Diffusion length and I.V. characteristics of the cells and transmission properties of the cover materials were measured. All neasurements were made in vacuum immediately after irradiation. In the second part it is intended to study the effect of various combinations of proton, electron and photon irradiation both with and without an electrical load. The results of this part show whether synergism is involved in solar cell damage and the relative importance of each of three radiation sources if synergism is found [fr

  1. Microscopic optoelectronic defectoscopy of solar cells

    Directory of Open Access Journals (Sweden)

    Dallaeva D.

    2013-05-01

    Full Text Available Scanning probe microscopes are powerful tool for micro- or nanoscale diagnostics of defects in crystalline silicon solar cells. Solar cell is a large p-n junction semiconductor device. Its quality is strongly damaged by the presence of defects. If the cell works under low reverse-biased voltage, defects emit a light in visible range. The suggested method combines three different measurements: electric noise measurement, local topography and near-field optical beam induced current and thus provides more complex information. To prove its feasibility, we have selected one defect (truncated pyramid in the sample, which emitted light under low reverse-biased voltage.

  2. Organic solar cells fundamentals, devices, and upscaling

    CERN Document Server

    Rand, Barry P

    2014-01-01

    Solution-Processed DonorsB. Burkhart, B. C. ThompsonSmall-Molecule and Vapor-Deposited Organic Photovoltaics R. R. Lunt, R. J. HolmesAcceptor Materials for Solution-Processed Solar Cells Y. HeInterfacial Layers R. Po, C. Carbonera, A. BernardiElectrodes in Organic Photovoltaic Cells S. Yoo, J.-Y. Lee, H. Kim, J. LeeTandem and Multi-Junction Organic Solar Cells J. Gilot, R. A. J. JanssenBulk Heterojunction Morphology Control and Characterization T. Wang, D. G. LidzeyOptical Modeling and Light Management

  3. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  4. Solar Cell Calibration and Measurement Techniques

    Science.gov (United States)

    Bailey, Sheila; Brinker, Dave; Curtis, Henry; Jenkins, Phillip; Scheiman, Dave

    2004-01-01

    The increasing complexity of space solar cells and the increasing international markets for both cells and arrays has resulted in workshops jointly sponsored by NASDA, ESA and NASA. These workshops are designed to obtain international agreement on standardized values for the AMO spectrum and constant, recommend laboratory measurement practices and establish a set of protocols for international comparison of laboratory measurements. A working draft of an ISO standard, WD15387, "Requirements for Measurement and Calibration Procedures for Space Solar Cells" was discussed with a focus on the scope of the document, a definition of primary standard cell, and required error analysis for all measurement techniques. Working groups addressed the issues of Air Mass Zero (AMO) solar constant and spectrum, laboratory measurement techniques, and te international round robin methodology. A summary is presented of the current state of each area and the formulation of the ISO document.

  5. 7 CFR 1466.27 - Conservation Innovation Grants (CIG).

    Science.gov (United States)

    2010-01-01

    ..., evaluation, and implementation of: (i) Conservation adoption incentive systems, including market-based... 7 Agriculture 10 2010-01-01 2010-01-01 false Conservation Innovation Grants (CIG). 1466.27 Section... PROGRAM Contracts and Payments § 1466.27 Conservation Innovation Grants (CIG). (a) Definitions. In...

  6. Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu(In,Ga)Se2 solar cell application

    Institute of Scientific and Technical Information of China (English)

    Chongyin Yang; DongyunWan; Zhou Wang; Fuqiang Huang

    2011-01-01

    Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (In, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.%Intrinsic zinc oxide films,normally deposited by radio frequency (RF) sputtering,are fabricated by direct current (DC) sputtering.The oxygen-deficient targets are prepared via a newly developed double crucible method.The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film.This is achieved by the widely used RF sputtering,which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells.The optimal ZnO film is used in a Cu (In,Ga) Se2 (C1GS) solar cell with a high efficiency of 11.57%.This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.High resistance transparent intrinsic zinc oxide (i-ZnO)thin film has been widely nsed as the front electrode in transparent electronics and photovoltaic devices because of its low cost and nontoxicity.Owing to its unique characteristics of high transparency and adjustable resistivity in a certain range,the use of i-ZnO thin films as diffusion barrier layers of a-Si/μc-Si,CdTe,and CIGS thin-film solar cells has been advantageous

  7. Dye-sensitised solar cell (artificial photosynthesis)

    CSIR Research Space (South Africa)

    Le Roux, Lukas J

    2006-02-01

    Full Text Available is the nano- crystalline TiO2dye- sensitised solar cell (DSC), in conjunction with several new concepts, such as nanotechnology and molecular devices. An efficient and low-cost cell can be produced by using simple materials. The production process generates...

  8. Walking-Beam Solar-Cell Conveyor

    Science.gov (United States)

    Feder, H.; Frasch, W.

    1982-01-01

    Microprocessor-controlled walking-beam conveyor moves cells between work stations in automated assembly line. Conveyor has arm at each work station. In unison arms pick up all solar cells and advance them one station; then beam retracks to be in position for next step. Microprocessor sets beam stroke, speed, and position.

  9. Polymer-fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Janssen, RAJ; Hummelen, JC; Saricifti, NS

    Nanostructured phase-separated blends, or bulk heterojunctions, of conjugated Polymers and fullerene derivatives form a very attractive approach to large-area, solid-state organic solar cells.The key feature of these cells is that they combine easy, processing from solution on a variety of

  10. High-efficiency concentrator silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

    1990-11-01

    This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

  11. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  12. Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

    Science.gov (United States)

    Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

    2015-10-14

    Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

  13. Development of large area, high efficiency amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

    1996-02-01

    The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

  14. Solar heating of GaAs nanowire solar cells.

    Science.gov (United States)

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

  15. Neutral Color Semitransparent Microstructured Perovskite Solar Cells

    KAUST Repository

    Eperon, Giles E.

    2014-01-28

    Neutral-colored semitransparent solar cells are commercially desired to integrate solar cells into the windows and cladding of buildings and automotive applications. Here, we report the use of morphological control of perovskite thin films to form semitransparent planar heterojunction solar cells with neutral color and comparatively high efficiencies. We take advantage of spontaneous dewetting to create microstructured arrays of perovskite "islands", on a length-scale small enough to appear continuous to the eye yet large enough to enable unattenuated transmission of light between the islands. The islands are thick enough to absorb most visible light, and the combination of completely absorbing and completely transparent regions results in neutral transmission of light. Using these films, we fabricate thin-film solar cells with respectable power conversion efficiencies. Remarkably, we find that such discontinuous films still have good rectification behavior and relatively high open-circuit voltages due to the inherent rectification between the n- and p-type charge collection layers. Furthermore, we demonstrate the ease of "color-tinting" such microstructured perovksite solar cells with no reduction in performance, by incorporation of a dye within the hole transport medium. © 2013 American Chemical Society.

  16. Light-trapping in perovskite solar cells

    Directory of Open Access Journals (Sweden)

    Qing Guo Du

    2016-06-01

    Full Text Available We numerically demonstrate enhanced light harvesting efficiency in both CH3NH3PbI3 and CH(NH22PbI3-based perovskite solar cells using inverted vertical-cone photonic-crystal nanostructures. For CH3NH3PbI3 perovskite solar cells, the maximum achievable photocurrent density (MAPD reaches 25.1 mA/cm2, corresponding to 92% of the total available photocurrent in the absorption range of 300 nm to 800 nm. Our cell shows 6% absorption enhancement compared to the Lambertian limit (23.7 mA/cm2 and has a projected power conversion efficiency of 12.9%. Excellent solar absorption is numerically demonstrated over a broad angular range from 0 to 60 degree for both S- and P- polarizations. For the corresponding CH(NH22PbI3 based perovskite solar cell, with absorption range of 300 nm to 850 nm, we find a MAPD of 29.1 mA/cm2, corresponding to 95.4% of the total available photocurrent. The projected power conversion efficiency of the CH(NH22PbI3 based photonic crystal solar cell is 23.4%, well above the current world record efficiency of 20.1%.

  17. Light-trapping in perovskite solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Du, Qing Guo, E-mail: duqi0001@e.ntu.edu.sg [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); Institute of High Performance Computing, A* STAR, Singapore, 138632 (Singapore); Shen, Guansheng [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); John, Sajeev [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); Department of Physics, Soochow University, Suzhou (China)

    2016-06-15

    We numerically demonstrate enhanced light harvesting efficiency in both CH{sub 3}NH{sub 3}PbI{sub 3} and CH(NH{sub 2}){sub 2}PbI{sub 3}-based perovskite solar cells using inverted vertical-cone photonic-crystal nanostructures. For CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cells, the maximum achievable photocurrent density (MAPD) reaches 25.1 mA/cm{sup 2}, corresponding to 92% of the total available photocurrent in the absorption range of 300 nm to 800 nm. Our cell shows 6% absorption enhancement compared to the Lambertian limit (23.7 mA/cm{sup 2}) and has a projected power conversion efficiency of 12.9%. Excellent solar absorption is numerically demonstrated over a broad angular range from 0 to 60 degree for both S- and P- polarizations. For the corresponding CH(NH{sub 2}){sub 2}PbI{sub 3} based perovskite solar cell, with absorption range of 300 nm to 850 nm, we find a MAPD of 29.1 mA/cm{sup 2}, corresponding to 95.4% of the total available photocurrent. The projected power conversion efficiency of the CH(NH{sub 2}){sub 2}PbI{sub 3} based photonic crystal solar cell is 23.4%, well above the current world record efficiency of 20.1%.

  18. Improvement of the energy conversion efficiency of Cu(In,Ga)Se{sub 2} solar cells using an additional Zn(S,O) buffer

    Energy Technology Data Exchange (ETDEWEB)

    Choi, In-Hwan, E-mail: ihchoi@cau.ac.kr [Chung-Ang University, Department of Physics, Seoul 156-756 (Korea, Republic of); Choi, Chul-Hwan [LG Innotek, Gyeonggi-do, Ansan-si 426-791 (Korea, Republic of)

    2012-12-15

    CuInGaSe{sub 2} (CIGS) solar cells were prepared with two different buffer structures. Sample A had a single, thin CdS buffer, {approx} 25 nm in thickness, and Sample B had a very thin CdS buffer (< 5 nm thickness) with an additional Zn(S,O) buffer layer. The CIGS and CdS layers in these samples were prepared using a 3-step co-evaporation method and chemical bath deposition, respectively, whereas the additional Zn(S,O) buffer and boron (B)-doped ZnO window layer were prepared by metal organic chemical vapor deposition. The current-voltage curves, quantum efficiency, depth profile by secondary ion mass spectrometry, and transmission electron microscopy images of both samples were analyzed. Sample B showed greater open circuit voltage than Sample A, whereas the short circuit current of Sample B was less than that of Sample A. Even though the energy conversion efficiency is not markedly improved compared to the highest recorded value of each sample, it was quite obvious throughout this experiment that the additional buffer cells had higher reliability and homogeneous properties than CdS buffer cells. - Highlights: Black-Right-Pointing-Pointer CuInGaSe{sub 2} solar cells were prepared with two different buffer structures. Black-Right-Pointing-Pointer One sample had a CdS buffer only, and the other had a very thin CdS and Zn(S,O) buffer. Black-Right-Pointing-Pointer Additional Zn(S,O) buffer was prepared by metal organic chemical vapor deposition. Black-Right-Pointing-Pointer Energy conversion efficiency of the additional buffer cells was slightly improved. Black-Right-Pointing-Pointer CdS/Zn(S,O) cells had higher reliability and homogeneous properties than CdS cells.

  19. Quantum-Tuned Multijunction Solar Cells

    Science.gov (United States)

    Koleilat, Ghada I.

    Multijunction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun's broad spectrum. In this dissertation, we first report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device's collecting electrodes---the heterointerface with electron accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact---for maximum efficiency. Room-temperature processing enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low thermal-budget larger-bandgap front cell. We report an electrode strategy that enables a depleted heterojunction CQD PV device to be fabricated entirely at room temperature. We develop a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells suitable for use as the back junction in tandem solar cells. We further report in this work the first efficient CQD tandem solar cells. We use a graded recombination layer (GRL) to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell. The recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We conclude our dissertation by presenting the generalized conditions for design of efficient graded recombination layer solar devices. We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the

  20. Morphology of polymer solar cells

    DEFF Research Database (Denmark)

    Böttiger, Arvid P.L.

    as a function of polymer, type of ink, annealing etc. Ptychography is a new state of the art X-ray imaging technique based on coherent scattering. Together with Scanning X-ray Transmission Microscopy (STXM) it has been used in this study to inspect the morphology of the active layer taken from working solar...

  1. Photovoltaic manufacturing cost and throughput improvements for thin-film CIGS-based modules: Phase 1 technical report, July 1998--July 1999

    Energy Technology Data Exchange (ETDEWEB)

    Wiedeman, S.; Wendt, R.G.

    2000-03-01

    The primary objectives of the Global Solar Energy (GSE) Photovoltaic Manufacturing Technology (PVMaT) subcontract are directed toward reducing cost and expanding the production rate of thin-film CuInGaSe{sub 2} (CIGS)-based PV modules on flexible substrates. Improvements will be implemented in monolithic integration, CIGS deposition, contact deposition, and in-situ CIGS control and monitoring. In Phase 1, GSE has successfully attacked many of the highest risk aspects of each task. All-laser, selective scribing processes for CIGS have been developed, and many end-of-contract goals for scribing speed have been exceeded in the first year. High-speed ink-jet deposition of insulating material in the scribes now appears to be a viable technique, again exceeding some end-of-contract goals in the first year. Absorber deposition of CIGS was reduced corresponding to throughput speeds of up to 24-in/min, also exceeding an end-of-contract goal. Alternate back-contact materials have been identified that show potential as candidates for replacement of higher-cost molybdenum, and a novel, real-time monitoring technique (parallel-detector spectroscopic ellipsometry) has shown remarkable sensitivity to relevant properties of the CIGS absorber layer for use as a diagnostic tool. Currently, one of the bilayers has been baselined by GSE for flexible CIGS on polymeric substrates. Resultant back-contacts meet sheet-resistance goals and exhibit much less intrinsic stress than Mo. CIGS has been deposited, and resultant devices are comparable in performance to pure Mo back-contacts. Debris in the chamber has been substantially reduced, allowing longer roll-length between system cleaning.

  2. Thin-Film CIGS Photovoltaic Technology: Annual Technical Report-Phase II, 16 April 1999-15 April 2000

    Energy Technology Data Exchange (ETDEWEB)

    Delahoy, A.E.; Bruns, J.; Ruppert, A.; Akhtar, M.; Chen, L.; Kiss, Z.J.

    2000-08-24

    A summary of Energy Photovoltaics' Phase II work includes the following: (1) EPV has demonstrated that it can sputter a Mo back-contact capable of supporting very high efficiency cell processing. Using EPV Mo, NREL has deposited a 17.1% CIGS cell (no AR coating). EPV believes it can identify the signature of ``good'' Mo. The Mo was produced on EPV's 0.43 m{sup 2} pilot-line equipment; (2) EPV has performed compound synthesis for several classes of materials, namely non-Cu precursor materials, Cu-containing materials, and ternary buffer materials. Using a ternary compound synthesized at EPV (ZIS) as an evaporation source material for the buffer layer, a Cd-free CIGS device has been produced having an efficiency of 11.5% (560 mV, 32.1 mA/cm{sup 2}, FF 64.3%). The ZIS films are photoconductive, and the devices exhibit no dark-light crossover or light soaking effects; (3) EPV initiated the interest of the University of Oregon in capacitance spectroscopy of CIGS devices. An Urbach tail with characteristic energy E0 < 20meV was identified by transient photocapacitance spectroscopy; (4) Small-area CIGS devices were produced in the pilot-line system with an efficiency of 12.0% (581 mV, 30.1 mA/cm{sup 2}, FF 68.7%), and in an R and D-scale system with 13.3% efficiency (569 mV, 34.1 mA/cm{sup 2}, FF 68.1%); (5) An improved linear evaporation source for Cu delivery has been developed and was used for CIGS formation in the pilot-line system. The deposition width is 45 cm. This technological ``tour de force'' allows EPV to build large-area CIGS systems possessing considerable flexibility. In particular, both EPV's FORNAX process and NREL's 3-stage process have been implemented on the pilot line. A CIGS thickness uniformity of 7% over a 40 cm width has been achieved; (6) A 4-head linear source assembly was designed, constructed, and is in use. Flux monitoring is practiced; (7) Large-area CIGS modules were produced with Voc's up to 36

  3. Thin-Film CIGS Photovoltaic Technology: Annual Technical Report-Phase II, 16 April 1999-15 April 2000; ANNUAL

    International Nuclear Information System (INIS)

    Delahoy, A.E.; Bruns, J.; Ruppert, A.; Akhtar, M.; Chen, L.; Kiss, Z.J.

    2000-01-01

    A summary of Energy Photovoltaics' Phase II work includes the following: (1) EPV has demonstrated that it can sputter a Mo back-contact capable of supporting very high efficiency cell processing. Using EPV Mo, NREL has deposited a 17.1% CIGS cell (no AR coating). EPV believes it can identify the signature of''good'' Mo. The Mo was produced on EPV's 0.43 m(sup 2) pilot-line equipment; (2) EPV has performed compound synthesis for several classes of materials, namely non-Cu precursor materials, Cu-containing materials, and ternary buffer materials. Using a ternary compound synthesized at EPV (ZIS) as an evaporation source material for the buffer layer, a Cd-free CIGS device has been produced having an efficiency of 11.5% (560 mV, 32.1 mA/cm(sup 2), FF 64.3%). The ZIS films are photoconductive, and the devices exhibit no dark-light crossover or light soaking effects; (3) EPV initiated the interest of the University of Oregon in capacitance spectroscopy of CIGS devices. An Urbach tail with characteristic energy E0 and lt; 20meV was identified by transient photocapacitance spectroscopy; (4) Small-area CIGS devices were produced in the pilot-line system with an efficiency of 12.0% (581 mV, 30.1 mA/cm(sup 2), FF 68.7%), and in an R and D-scale system with 13.3% efficiency (569 mV, 34.1 mA/cm(sup 2), FF 68.1%); (5) An improved linear evaporation source for Cu delivery has been developed and was used for CIGS formation in the pilot-line system. The deposition width is 45 cm. This technological''tour de force'' allows EPV to build large-area CIGS systems possessing considerable flexibility. In particular, both EPV's FORNAX process and NREL's 3-stage process have been implemented on the pilot line. A CIGS thickness uniformity of 7% over a 40 cm width has been achieved; (6) A 4-head linear source assembly was designed, constructed, and is in use. Flux monitoring is practiced; (7) Large-area CIGS modules were produced with Voc's up to 36.3 V; (8) EPV has started to construct an

  4. Stability Issues on Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Xing Zhao

    2015-11-01

    Full Text Available Organo lead halide perovskite materials like methylammonium lead iodide (CH3NH3PbI3 and formamidinium lead iodide (HC(NH22PbI3 show superb opto-electronic properties. Based on these perovskite light absorbers, power conversion efficiencies of the perovskite solar cells employing hole transporting layers have increased from 9.7% to 20.1% within just three years. Thus, it is apparent that perovskite solar cell is a promising next generation photovoltaic technology. However, the unstable nature of perovskite was observed when exposing it to continuous illumination, moisture and high temperature, impeding the commercial development in the long run and thus becoming the main issue that needs to be solved urgently. Here, we discuss the factors affecting instability of perovskite and give some perspectives about further enhancement of stability of perovskite solar cell.

  5. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  6. A special issue on solar cells

    Institute of Scientific and Technical Information of China (English)

    Yi-Bing CHENG

    2011-01-01

    @@ The increasing demand for renewable energy has made the solar cell technology as one of the most significantresearch and development areas of today.Silicon based solar cells are the dominant photovoltaic products at the present time, but the relatively high costs are barriers for their broad applications.Research has been active worldwide in developing other photovoltaic technologies that use cheap materials and can be easily manufactured.Organic solar cells have attracted a lot of interests recently due to their potential to be low cost photovoltaic technologies.This special issue of the Frontiers of Optoelectronics in China has collected research articles by a number of Chinese and international experts.It is aimed to broaden the readers' view about some of the recent developments and challenges in this important R&D field.Thirteen excellent papers are in this special issue including 4 review articles and 9 research articles.

  7. Doctor Blade-Coated Polymer Solar Cells

    KAUST Repository

    Cho, Nam Chul

    2016-10-25

    In this work, we report polymer solar cells based on blade-coated P3HT:PC71BM and PBDTTT-EFT:PC71BM bulk heterojunction photoactive layers. Enhanced power conversion efficiency of 2.75 (conventional structure) and 3.03% (inverted structure) with improved reproducibility was obtained from blade-coated P3HT:PC71BM solar cells, compared to spin-coated ones. Furthermore, by demonstrating 3.10% efficiency flexible solar cells using blade-coated PBDTTT-EFT:PC71BM films on the plastic substrates, we suggest the potential applicability of blade coating technique to the high throughput roll-to-roll fabrication systems.

  8. Perovskite Solar Cells: Potentials, Challenges, and Opportunities

    Directory of Open Access Journals (Sweden)

    Muhammad Imran Ahmed

    2015-01-01

    Full Text Available Heralded as a major scientific breakthrough of 2013, organic/inorganic lead halide perovskite solar cells have ushered in a new era of renewed efforts at increasing the efficiency and lowering the cost of solar energy. As a potential game changer in the mix of technologies for alternate energy, it has emerged from a modest beginning in 2012 to efficiencies being claimed at 20.1% in a span of just two years. This remarkable progress, encouraging at one end, also points to the possibility that the potential may still be far from being fully realized. With greater insight into the photophysics involved and optimization of materials and methods, this technology stands to match or even exceed the efficiencies for single crystal silicon solar cells. With thin film solution processability, applicability to flexible substrates, and being free of liquid electrolyte, this technology combines the benefits of Dye Sensitized Solar Cells (DSSCs, Organic Photovoltaics (OPVs, and thin film solar cells. In this review we present a brief historic perspective to this development, take a cognizance of the current state of the art, and highlight challenges and the opportunities.

  9. Questionable effects of antireflective coatings on inefficiently cooled solar cells

    DEFF Research Database (Denmark)

    Akhmatov, Vladislav; Galster, Georg; Larsen, Esben

    1998-01-01

    of the output power and efficiency curves throughout the day the coherence between technical parameters of the solar cells and the climate in the operation region is observed and examined. It is shown how the drop in output power around noon can be avoided by fitting technical parameters of the solar cells......A model for temperature effects in p-n junction solar cells is introduced. The temperature of solar cells and the losses in the solar cell junction region caused by elevating temperature are discussed. The model developed is examined for low-cost silicon solar cells. In order to improve the shape...

  10. Application of porous silicon in solar cell

    Science.gov (United States)

    Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

    2018-05-01

    Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

  11. High throughput solar cell ablation system

    Science.gov (United States)

    Harley, Gabriel; Pass, Thomas; Cousins, Peter John; Viatella, John

    2012-09-11

    A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

  12. Origami-enabled deformable silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

    2014-02-24

    Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

  13. Origami-enabled deformable silicon solar cells

    International Nuclear Information System (INIS)

    Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing; Tu, Hongen; Xu, Yong; Song, Zeming; Jiang, Hanqing; Yu, Hongyu

    2014-01-01

    Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics

  14. Microstructured extremely thin absorber solar cells

    DEFF Research Database (Denmark)

    Biancardo, Matteo; Krebs, Frederik C

    2007-01-01

    In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed by press......In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed...

  15. Design issues for optimum solar cell configuration

    Science.gov (United States)

    Kumar, Atul; Thakur, Ajay D.

    2018-05-01

    A computer based simulation of solar cell structure is performed to study the optimization of pn junction configuration for photovoltaic action. The fundamental aspects of photovoltaic action viz, absorption, separation collection, and their dependence on material properties and deatails of device structures is discussed. Using SCAPS 1D we have simulated the ideal pn junction and shown the effect of band offset and carrier densities on solar cell performance. The optimum configuration can be achieved by optimizing transport of carriers in pn junction under effect of field dependent recombination (tunneling) and density dependent recombination (SRH, Auger) mechanisms.

  16. High efficiency double sided solar cells

    International Nuclear Information System (INIS)

    Seddik, M.M.

    1990-06-01

    Silicon technology state of the art for single crystalline was given to be limited to less than 20% efficiency. A proposed new form of photovoltaic solar cell of high current high efficiency with double sided structures has been given. The new forms could be n ++ pn ++ or p ++ np ++ double side junctions. The idea of double sided devices could be understood as two solar cells connected back-to-back in parallel electrical connection, in which the current is doubled if the cell is illuminated from both sides by a V-shaped reflector. The cell is mounted to the reflector such that each face is inclined at an angle of 45 deg. C to each side of the reflector. The advantages of the new structure are: a) High power devices. b) Easy to fabricate. c) The cells are used vertically instead of horizontal use of regular solar cell which require large area to install. This is very important in power stations and especially for satellite installation. If the proposal is made real and proved to be experimentally feasible, it would be a new era for photovoltaic solar cells since the proposal has already been extended to even higher currents. The suggested structures could be stated as: n ++ pn ++ Vp ++ np ++ ;n ++ pn ++ Vn ++ pn ++ ORp ++ np ++ Vp ++ np ++ . These types of structures are formed in wedged shape to employ indirect illumination by either parabolic; conic or V-shaped reflectors. The advantages of these new forms are low cost; high power; less in size and space; self concentrating; ... etc. These proposals if it happens to find their ways to be achieved experimentally, I think they will offer a short path to commercial market and would have an incredible impact on solar cell technology and applications. (author). 12 refs, 5 figs

  17. Advances in solar cell welding technology

    Energy Technology Data Exchange (ETDEWEB)

    Chidester, L.G.; Lott, D.R.

    1982-09-01

    In addition to developing the rigid substrate welded conventional cell panels for an earlier U.S. flight program, LMSC recently demonstrated a welded lightweight array system using both 2 x 4 and 5.9 x 5.9 cm wraparound solar cells. This weld system uses infrared sensing of weld joint temperature at the cell contact metalization interface to precisely control weld energy on each joint. Modules fabricated using this weld control system survived lowearth-orbit simulated 5-year tests (over 30,000 cycles) without joint failure. The data from these specifically configured modules, printed circuit substrate with copper interconnect and dielectric wraparound solar cells, can be used as a basis for developing weld schedules for additional cell array panel types.

  18. Heteroepitaxially grown InP solar cells

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Brinker, D.J.; Wilt, D.M.

    1990-01-01

    Although they are significantly more radiation resistant than either Si or GaAs solar cells, their high wafer cost presents a barrier to the widespread use of InP solar cells in space. For this reason, the authors have initiated a program aimed at producing high efficiency, radiation resistant solar cells processed from InP heteroepitaxially grown on cheaper substrates. The authors' objective is to present the most recent results emanating from this program together with the results of their initial proton irradiations on these cells. This paper reports that InP cells were processed from a 4 micron layer of InP, grown by OMCVD on a silicon substrate, with a 0.5 micron buffer layer between the InP directly grown on a GaAs substrate. Initial feasibility studies, in a Lewis sponsored program at the Spire corporation, resulted in air mass zero efficiencies of 7.1% for the former cells and 9.1% for the latter. These initial low efficiencies are attributed to the high dislocation densities caused by lattice mismatch. The authors' preirradiation analysis indicates extremely low minority carrier diffusion lengths, in both cell base and emitter, and high values of both the diffusion and recombination components of the diode reverse saturation currents. Irradiation by 10 MeV protons, to a fluence of 10 13 cm -2 , resulted in relatively low degradation in cell efficiency, short circuit current and open circuit voltage

  19. Development of Inorganic Solar Cells by Nano-technology

    Institute of Scientific and Technical Information of China (English)

    Yafei Zhang; HueyLiang Hwang; Huijuan Geng; Zhihua Zhou; Jiang Wu; Zhiming Wang; Yaozhong Zhang; Zhongli Li; Liying Zhang; Zhi Yang

    2012-01-01

    Inorganic solar cells, as durable photovoltaic devices for harvesting electric energy from sun light, have received tremendous attention due to the fear of exhausting the earth’s energy resources and damaging the living environment due to greenhouse gases. Some recent developments in nanotechnology have opened up new avenues for more relevant inorganic solar cells produced by new photovoltaic conversion concepts and effective solar energy harvesting nanostructures. In this review, the multiple exciton generation effect solar cells, hot carrier solar cells, one dimensional material constructed asymmetrical schottky barrier arrays, noble nanoparticle induced plasmonic enhancement, and light trapping nanostructured semiconductor solar cells are highlighted.

  20. Photonic crystal geometry for organic solar cells.

    Science.gov (United States)

    Ko, Doo-Hyun; Tumbleston, John R; Zhang, Lei; Williams, Stuart; DeSimone, Joseph M; Lopez, Rene; Samulski, Edward T

    2009-07-01

    We report organic solar cells with a photonic crystal nanostructure embossed in the photoactive bulk heterojunction layer, a topography that exhibits a 3-fold enhancement of the absorption in specific regions of the solar spectrum in part through multiple excitation resonances. The photonic crystal geometry is fabricated using a materials-agnostic process called PRINT wherein highly ordered arrays of nanoscale features are readily made in a single processing step over wide areas (approximately 4 cm(2)) that is scalable. We show efficiency improvements of approximately 70% that result not only from greater absorption, but also from electrical enhancements. The methodology is generally applicable to organic solar cells and the experimental findings reported in our manuscript corroborate theoretical expectations.

  1. Colloidal quantum dot solar cells exploiting hierarchical structuring

    KAUST Repository

    Labelle, André J.; Thon, Susanna; Masala, Silvia; Adachi, Michael M.; Dong, Haopeng; Farahani, Maryam; Ip, Alexander H.; Fratalocchi, Andrea; Sargent, E. H.

    2015-01-01

    Extremely thin-absorber solar cells offer low materials utilization and simplified manufacture but require improved means to enhance photon absorption in the active layer. Here, we report enhanced-absorption colloidal quantum dot (CQD) solar cells

  2. Generalized detailed balance theory of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kirchartz, Thomas

    2009-12-12

    The principle of detailed balance is the requirement that every microscopic process in a system must be in equilibrium with its inverse process, when the system itself is in thermodynamic equilibrium. This detailed balance principle has been of special importance for photovoltaics, since it allows the calculation of the limiting efficiency of a given solar cell by defining the only fundamental loss process as the radiative recombination of electron/hole pairs followed by the emission of a photon. In equilibrium, i.e. in the dark and without applied voltage, the absorbed and emitted photon flux must be equal due to detailed balance. This equality determines the radiative recombination from absorption and vice versa. While the classical theory of photovoltaic efficiency limits by Shockley and Queisser considers only one detailed balance pair, namely photogeneration and radiative recombination, the present work extends the detailed balance principle to any given process in the solar cell. Applying the detailed balance principle to the whole device leads to two major results, namely (i) a model that is compatible with the Shockley-Queisser efficiency limit for efficient particle transport, while still being able to describe non-ideal and non-linear solar cells, and (ii) an analytical relation between electroluminescent emission and photovoltaic action of a diode that is applied to a variety of different solar cells. This thesis presents several variations of a detailed balance model that are applicable to different types of solar cells. Any typical inorganic solar cell is a mainly bipolar device, meaning that the current is carried by electrons and holes. The detailed balance model for pn-type and pin-type bipolar solar cells is therefore the most basic incorporation of a detailed balance model. The only addition compared to the classical diode theory or compared to standard one-dimensional device simulators is the incorporation of photon recycling, making the model

  3. Doctor Blade-Coated Polymer Solar Cells

    KAUST Repository

    Cho, Nam Chul; Kim, Jong H.

    2016-01-01

    In this work, we report polymer solar cells based on blade-coated P3HT:PC71BM and PBDTTT-EFT:PC71BM bulk heterojunction photoactive layers. Enhanced power conversion efficiency of 2.75 (conventional structure) and 3.03% (inverted structure

  4. Baselines for Lifetime of Organic Solar Cells

    DEFF Research Database (Denmark)

    Gevorgyan, Suren; Espinosa Martinez, Nieves; Ciammaruchi, Laura

    2016-01-01

    The process of accurately gauging lifetime improvements in organic photovoltaics (OPVs) or other similar emerging technologies, such as perovskites solar cells is still a major challenge. The presented work is part of a larger effort of developing a worldwide database of lifetimes that can help...

  5. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    Film adhesion in amorphous silicon solar cells. A R M YUSOFF*, M N SYAHRUL and K HENKEL. Malaysia Energy Centre, 8th Floor, North Wing, Sapura @ Mines, 7, Jalan Tasik, The Mines Resort City,. 43300 Seri Kembangan, Selangor Darul Ehsan. MS received 11 April 2007. Abstract. A major issue encountered ...

  6. Electrical Characterization of HIT type solar cells

    NARCIS (Netherlands)

    Rath, J.K.

    2012-01-01

    The silicon heterojunction solar cell (SHJ) has made rapid progress in reaching high efficiency and it is already developed as an industrially viable product. However, much of its progress has come through process development while there is scarce knowledge on the microscopic nature of the

  7. Characterization of HIT type solar cells

    NARCIS (Netherlands)

    Rath, J.K.

    2011-01-01

    The silicon heterojunction solar cell (SHJ) has made rapid progress in reaching high efficiency and it is already developed as an industrially viable product. However, much of its progress has come through process development while there is scarce knowledge on the microscopic nature of the

  8. Fullerenes and nanostructured plastic solar cells

    NARCIS (Netherlands)

    Knol, Joop; Hummelen, Jan C.; Kuzmany, H; Fink, J; Mehring, M; Roth, S

    1998-01-01

    We report on the present on the present status of the plastic solar cell and on the design of fullerene derivatives and pi-conjugated donor molecules that can function as acceptor-donor pairs and (supra-) molecular building blocks in organized, nanostructured interpenetrating networks, forming a

  9. Photochromic dye-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Noah M. Johnson

    2015-11-01

    Full Text Available We report the fabrication and characterization of photochromic dye sensitized solar cells that possess the ability to change color depending on external lighting conditions. This device can be used as a “smart” window shade that tints, collects the sun's energy, and blocks sunlight when the sun shines, and is completely transparent at night.

  10. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo

    2012-06-13

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  11. Solar Cell Efficiency Tables (Version 51)

    Energy Technology Data Exchange (ETDEWEB)

    Levi, Dean H [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Green, Martin A. [University of New South Wales; Hishikawa, Yoshihiro [National Institute of Advanced Industrial Science and Technology (AIST); Dunlop, Ewan D. [European Commission-Joint Research Centre; Hohl-Ebinger, Jochen [Fraunhofer Institute for Solar Energy Systems; Ho-Baillie, Anita W. Y. [University of New South Wales

    2017-12-14

    Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2017 are reviewed, together with progress over the last 25 years. Appendices are included documenting area definitions and also listing recognised test centres.

  12. Distributed series resistance effects in solar cells

    DEFF Research Database (Denmark)

    Nielsen, Lars Drud

    1982-01-01

    A mathematical treatment is presented of the effects of one-dimensional distributed series resistance in solar cells. A general perturbation theory is developed, including consistently the induced spatial variation of diode current density and leading to a first-order equivalent lumped resistance...

  13. Hybrid solar cells : Perovskites under the Sun

    NARCIS (Netherlands)

    Loi, Maria Antonietta; Hummelen, Jan C.

    2013-01-01

    Mixed-halide organic–inorganic hybrid perovskites are reported to display electron–hole diffusion lengths over 1 μm. This observation provides important insight into the charge-carrier dynamics of this class of semiconductors and increases the expectations for highly efficient and cheap solar cells.

  14. Energy. From firewood to solar cell

    International Nuclear Information System (INIS)

    Reijnders, L.

    2006-01-01

    An outline is given of the development of energy and the options to secure the energy supply for the future. Much information is given about energy efficiency, the exploitation of tar sands, reopening of the coal mines in the Netherlands, nuclear fusion and fission, wave energy and solar cells, etc [nl

  15. Fuel Cell / electrolyser, Solar Photovoltaic Powered

    Directory of Open Access Journals (Sweden)

    Chioncel Cristian Paul

    2012-01-01

    Full Text Available The paper presents experimental obtained results in the operation ofelectrolyzer powered by solar photovoltaic modules, for the waterelectrolysis and with the obtained hydrogen and oxygen proceeds tothe operation in fuel cell mode, type PEM. The main operatingparameters and conditions to optimize the energy conversion on thesolar-hydrogen-electricity cycle are highlighted, so that those arecomparable or superior to conventional cycles.

  16. Numerical simulation model of multijunction solar cell

    NARCIS (Netherlands)

    Babar, M.; Al-Ammar, E.A.; Malik, N.H.

    2012-01-01

    Multi-junction solar cells play an important and significant role in the Concentrated Photovoltaic (CPV) Systems. Recent developments in Concentrated Photovoltaic concerning high power production and cost effective- ness along with better efficiency are due to the advancements in multi-junction

  17. Solar cells for space applications (part 2)

    International Nuclear Information System (INIS)

    Gomez, T.J.

    1992-01-01

    This lecture focusses on qualification and verification tests and procedures on solar cells designed for space applications. The series of tests should produce orbital performance under determined illumination, temperature and irradiance. Tests are divided in outdoor and laboratory experiments. Environmental tests include durability, qualification (mechanical and electrical), I-V curves, Spectral response

  18. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo; Garnett, Erik C.; Wang, Shuang; Yu, Zongfu; Fan, Shanhui; Brongersma, Mark L.; McGehee, Michael D.; Cui, Yi

    2012-01-01

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  19. Passivated emitters in silicon solar cells

    International Nuclear Information System (INIS)

    King, R.R.; Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

    1990-01-01

    In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, J o , of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration was extracted. The lowest observed values of J o which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data have been applied to two types of backside-contact solar cells with large area (37.5 cm 2 ) and one-sun efficiencies up to 22.7%

  20. Diketopyrrolopyrrole Polymers for Organic Solar Cells.

    Science.gov (United States)

    Li, Weiwei; Hendriks, Koen H; Wienk, Martijn M; Janssen, René A J

    2016-01-19

    Conjugated polymers have been extensively studied for application in organic solar cells. In designing new polymers, particular attention has been given to tuning the absorption spectrum, molecular energy levels, crystallinity, and charge carrier mobility to enhance performance. As a result, the power conversion efficiencies (PCEs) of solar cells based on conjugated polymers as electron donor and fullerene derivatives as electron acceptor have exceeded 10% in single-junction and 11% in multijunction devices. Despite these efforts, it is notoriously difficult to establish thorough structure-property relationships that will be required to further optimize existing high-performance polymers to their intrinsic limits. In this Account, we highlight progress on the development and our understanding of diketopyrrolopyrrole (DPP) based conjugated polymers for polymer solar cells. The DPP moiety is strongly electron withdrawing and its polar nature enhances the tendency of DPP-based polymers to crystallize. As a result, DPP-based conjugated polymers often exhibit an advantageously broad and tunable optical absorption, up to 1000 nm, and high mobilities for holes and electrons, which can result in high photocurrents and good fill factors in solar cells. Here we focus on the structural modifications applied to DPP polymers and rationalize and explain the relationships between chemical structure and organic photovoltaic performance. The DPP polymers can be tuned via their aromatic substituents, their alkyl side chains, and the nature of the π-conjugated segment linking the units along the polymer chain. We show that these building blocks work together in determining the molecular conformation, the optical properties, the charge carrier mobility, and the solubility of the polymer. We identify the latter as a decisive parameter for DPP-based organic solar cells because it regulates the diameter of the semicrystalline DPP polymer fibers that form in the photovoltaic blends with

  1. Application of femtosecond laser ablation inductively coupled plasma mass spectrometry for quantitative analysis of thin Cu(In,Ga)Se{sub 2} solar cell films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seokhee [School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of); Gonzalez, Jhanis J. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Yoo, Jong H. [Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Chirinos, Jose R. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Facultad de Ciencias, Universidad Central de Venezuela, Caracas 1041A (Venezuela, Bolivarian Republic of); Russo, Richard E. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Jeong, Sungho, E-mail: shjeong@gist.ac.kr [School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of)

    2015-02-27

    This work reports that the composition of Cu(In,Ga)Se{sub 2} (CIGS) thin solar cell films can be quantitatively predicted with high accuracy and precision by femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS). It is demonstrated that the results are strongly influenced by sampling conditions during fs-laser beam (λ = 1030 nm, τ = 450 fs) scanning on the CIGS surface. The fs-LA-ICP-MS signals measured at optimal sampling conditions generally provide a straight line calibration with respect to the reference concentrations measured by inductively coupled plasma optical emission spectroscopy (ICP-OES). The concentration ratios predicted by fs-LA-ICP-MS showed high accuracy, to 95–97% of the values measured with ICP-OES, for Cu, In, Ga, and Se elements. - Highlights: • Laser ablation inductively coupled plasma mass spectrometry of thin film is reported. • Concentration ratio prediction with a confidence level of 95–97% is achieved. • Quantitative determination of composition is demonstrated.

  2. Carbon- and oxygen-free Cu(InGa)(SSe)₂ solar cell with a 4.63% conversion efficiency by electrostatic spray deposition.

    Science.gov (United States)

    Yoon, Hyun; Na, Seung Heon; Choi, Jae Young; Kim, Min Woo; Kim, Hayong; An, Hee Sang; Min, Byoung Koun; Ahn, SeJin; Yun, Jae Ho; Gwak, Jihye; Yoon, KyungHoon; Kolekar, Sanjay S; van Hest, Maikel F A M; Al-Deyab, Salem S; Swihart, Mark T; Yoon, Sam S

    2014-06-11

    We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm(2) area, with Voc = 0.4 V, Jsc = 21 mA/cm(2), and FF = 0.53.

  3. How the relative permittivity of solar cell materials influences solar cell performance

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Huss-Hansen, Mathias K.; Hansen, Ole

    2017-01-01

    of the materials permittivity on the physics and performance of the solar cell by means of numerical simulation supported by analytical relations. We demonstrate that, depending on the specific solar cell configuration and materials properties, there are scenarios where the relative permittivity has a major......The relative permittivity of the materials constituting heterojunction solar cells is usually not considered as a design parameter when searching for novel combinations of heterojunction materials. In this work, we investigate the validity of such an approach. Specifically, we show the effect...... the heterojunction partner has a high permittivity, solar cells are consistently more robust against several non-idealities that are especially likely to occur in early-stage development, when the device is not yet optimized....

  4. Back surface studies of Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Simchi, Hamed

    resulting in a 9.7% cell (with 0.3 microm thickness) which has the highest efficiency reported for ultrathin CIGS solar cells to date. In addition, sulfized back contacts including ITO-S and MoS 2 are compared. Interface properties of different contact layers with (Ag,Cu)(In,Ga)Se2 absorber layers with various Ga/(Ga+In) and Ag/(Ag+Cu) ratios are discussed based on the XPS analysis and thermodynamics of reactions.

  5. Nanocluster production for solar cell applications

    International Nuclear Information System (INIS)

    Al Dosari, Haila M.; Ayesh, Ahmad I.

    2013-01-01

    This research focuses on the fabrication and characterization of silver (Ag) and silicon (Si) nanoclusters that might be used for solar cell applications. Silver and silicon nanoclusters have been synthesized by means of dc magnetron sputtering and inert gas condensation inside an ultra-high vacuum compatible system. We have found that nanocluster size distributions can be tuned by various source parameters, such as the sputtering discharge power, flow rate of argon inert gas, and aggregation length. Quadrupole mass filter and transmission electron microscopy were used to evaluate the size distribution of Ag and Si nanoclusters. Ag nanoclusters with average size in the range of 3.6–8.3 nm were synthesized (herein size refers to the nanocluster diameter), whereas Si nanoclusters' average size was controlled to range between 2.9 and 7.4 nm by controlling the source parameters. This work illustrates the ability of controlling the Si and Ag nanoclusters' sizes by proper optimization of the operation conditions. By controlling nanoclusters' sizes, one can alter their surface properties to suit the need to enhance solar cell efficiency. Herein, Ag nanoclusters were deposited on commercial polycrystalline solar cells. Short circuit current (I SC ), open circuit voltage (V OC ), fill factor, and efficiency (η) were obtained under light source with an intensity of 30 mW/cm 2 . A 22.7% enhancement in solar cell efficiency could be measured after deposition of Ag nanoclusters, which demonstrates that Ag nanoclusters generated in this work are useful to enhance solar cell efficiency

  6. Solar cell radiation handbook. Addendum 1: 1982-1988

    International Nuclear Information System (INIS)

    Anspaugh, B.E.

    1989-02-01

    The Solar Cell Radiation Handbook (JPL Publication 82-69) is updated. In order to maintain currency of solar cell radiation data, recent solar cell designs have been acquired, irradiated with 1 MeV electrons, and measured. The results of these radiation experiments are reported

  7. NREL Solar Cell Wins Federal Technology Transfer Prize | News | NREL

    Science.gov (United States)

    Solar Cell Wins Federal Technology Transfer Prize News Release: NREL Solar Cell Wins Federal Technology Transfer Prize May 7, 2009 A new class of ultra-light, high-efficiency solar cells developed by the U.S. Department of Energy's National Renewable Energy Laboratory has been awarded a national prize

  8. Flexible thermal cycle test equipment for concentrator solar cells

    Science.gov (United States)

    Hebert, Peter H [Glendale, CA; Brandt, Randolph J [Palmdale, CA

    2012-06-19

    A system and method for performing thermal stress testing of photovoltaic solar cells is presented. The system and method allows rapid testing of photovoltaic solar cells under controllable thermal conditions. The system and method presents a means of rapidly applying thermal stresses to one or more photovoltaic solar cells in a consistent and repeatable manner.

  9. A cost roadmap for silicon heterojunction solar cells

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.; Schropp, R.E.I.; Faaij, A.

    2016-01-01

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  10. A Cost Roadmap for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  11. High-efficient solar cells with porous silicon

    International Nuclear Information System (INIS)

    Migunova, A.A.

    2002-01-01

    It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

  12. C-Si solar cell modules

    International Nuclear Information System (INIS)

    Tomita, Takashi

    2005-01-01

    In order to meet the rapidly growing demand for solar power photovoltaic systems which is based on public consciousness of global environmental issues, SHARP has increased the production of solar cells and modules over 10-fold in the last 5 years. Silicon-based technologies are expected to be dominant in the coming decade. In the course of an increase of the annual production scale to 1000 MW, the efficiency of modules will be improved and the thickness of wafers will be decreased and all this will lead to a drastic price reduction of PV systems. (Author)

  13. Characterisation of multicrystalline solar cells

    OpenAIRE

    A.Q. Malik; Chong Chew Hah; Chan Siang Khwang; Lim Chee Ming; Tan Kha Sheng

    2017-01-01

    The evaluation and assessment of the performance of photovoltaic (PV) cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Mo st noticeable of all these parameters is the PV conversion efficiency η, defined as the maximum electrical power Pmax produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (STC). These conditions re...

  14. Laser scanning of experimental solar cells

    Science.gov (United States)

    Plunkett, B. C.; Lasswell, P. G.

    1980-01-01

    A description is presented of a laser scanning instrument which makes it possible to display and measure the spatial response of a solar cell. Examples are presented to illustrate the use of generated micrographs in the isolation of flaws and features of the cell. The laser scanner system uses a 4 mW, CW helium-neon laser, operating a wavelength of 0.633 micrometers. The beam is deflected by two mirror galvanometers arranged to scan in orthogonal directions. After being focused on the solar cell by the beam focusing lens, the moving light spot raster scans the specimen. The current output of the photovoltaic device under test, as a function of the scan dot position, can be displayed in several modes. The laser scanner has proved to be a very useful diagnostic tool in optimizing the process design of transparent metal film photovoltaic devices on Zn3P2, a relatively new photovoltaic material.

  15. TRANSPARENT COATINGS FOR SOLAR CELLS RESEARCH

    Energy Technology Data Exchange (ETDEWEB)

    Glatkowski, P. J.; Landis, D. A.

    2013-04-16

    Todays solar cells are fabricated using metal oxide based transparent conductive coatings (TCC) or metal wires with optoelectronic performance exceeding that currently possible with Carbon Nanotube (CNT) based TCCs. The motivation for replacing current TCC is their inherent brittleness, high deposition cost, and high deposition temperatures; leading to reduced performance on thin substrates. With improved processing, application and characterization techniques Nanofiber and/or CNT based TCCs can overcome these shortcomings while offering the ability to be applied in atmospheric conditions using low cost coating processes At todays level of development, CNT based TCC are nearing commercial use in touch screens, some types of information displays (i.e. electronic paper), and certain military applications. However, the resistivity and transparency requirements for use in current commercial solar cells are more stringent than in many of these applications. Therefore, significant research on fundamental nanotube composition, dispersion and deposition are required to reach the required performance commanded by photovoltaic devices. The objective of this project was to research and develop transparent conductive coatings based on novel nanomaterial composite coatings, which comprise nanotubes, nanofibers, and other nanostructured materials along with binder materials. One objective was to show that these new nanomaterials perform at an electrical resistivity and optical transparency suitable for use in solar cells and other energy-related applications. A second objective was to generate new structures and chemistries with improved resistivity and transparency performance. The materials also included the binders and surface treatments that facilitate the utility of the electrically conductive portion of these composites in solar photovoltaic devices. Performance enhancement venues included: CNT purification and metallic tube separation techniques, chemical doping, CNT

  16. Solar Airplanes and Regenerative Fuel Cells

    Science.gov (United States)

    Bents, David J.

    2007-01-01

    A solar electric aircraft with the potential to "fly forever" has captured NASA's interest, and the concept for such an aircraft was pursued under Aeronautics Environmental Research Aircraft and Sensor Technology (ERAST) project. Feasibility of this aircraft happens to depend on the successful development of solar power technologies critical to NASA's Exploration Initiatives; hence, there was widespread interest throughout NASA to bring these technologies to a flight demonstration. The most critical is an energy storage system to sustain mission power during night periods. For the solar airplane, whose flight capability is already limited by the diffuse nature of solar flux and subject to latitude and time of year constraints, the feasibility of long endurance flight depends on a storage density figure of merit better than 400-600 watt-hr per kilogram. This figure of merit is beyond the capability of present day storage technologies (other than nuclear) but may be achievable in the hydrogen-oxygen regenerative fuel cell (RFC). This potential has led NASA to undertake the practical development of a hydrogen-oxygen regenerative fuel cell, initially as solar energy storage for a high altitude UAV science platform but eventually to serve as the primary power source for NASAs lunar base and other planet surface installations. Potentially the highest storage capacity and lowest weight of any non-nuclear device, a flight-weight RFC aboard a solar-electric aircraft that is flown continuously through several successive day-night cycles will provide the most convincing demonstration that this technology's widespread potential has been realized. In 1998 NASA began development of a closed cycle hydrogen oxygen PEM RFC under the Aeronautics Environmental Research Aircraft and Sensor Technology (ERAST) project and continued its development, originally for a solar electric airplane flight, through FY2005 under the Low Emissions Alternative Power (LEAP) project. Construction of

  17. BODIPYs for Dye-Sensitized Solar Cells.

    Science.gov (United States)

    Klfout, Hafsah; Stewart, Adam; Elkhalifa, Mahmoud; He, Hongshan

    2017-11-22

    BODIPY, abbreviation of boron-dipyrromethene, is one class of robust organic molecules that has been used widely in bioimaging, sensing, and logic gate design. Recently, BODIPY dyes have been explored for dye-sensitized solar cells (DSCs). Studies demonstrate their potential as light absorbers for the conversion of solar energy to electricity. However, their photovoltaic performance is inferior to many other dyes, including porphyrin dyes. In this review, several synthetic strategies of BODIPY dyes for DSCs and their further functionalization are described. The photophysical properties of dye molecules and their photovoltaic performances in DSCs are summarized. We aim to provide readers a clear picture of the field and expect to shed light on the next generation of BODIPY dyes for their applications in solar energy conversion.

  18. Electrodeposition route to synthesize cigs films – an economical way ...

    African Journals Online (AJOL)

    user

    Unlike binary conductors CIGS film preparation needs highly ... This argument also holds well in forming a hetero-junction partner CdS ..... successfully electrodeposited onto indium tin oxide substrate and it is recently reported (Li et al., 2010).

  19. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  20. Solar Cell Production in Nigeria: Prospects, Options and Problems

    International Nuclear Information System (INIS)

    Fasasi, A. Y.; Siyanbola, W.O.; Ibitoye, F. I.; Pelemo, D. A.

    2002-01-01

    The prospects and problems facing solar cell production in Nigeria are discussed. The paper reviews many proven solar cell materials in terms of their current efficiencies and production costs. Silicon solar cell production appears to be the best technology option for Nigeria because of the abundant quartz sand and waste products from our phosphate fertiliser company that can be employed as starting materials to produce solar grade silicon. Factors affecting solar cell efficiency, choice of solar cell as well as financial and material problems limiting the progress on silicon solar cell production are also discussed. Finally, the paper recommends the simultaneous production of solar grade silicon and coordinated development of the balance of system components as first steps towards actualizing this objective

  1. Semiconductor Nanocrystals as Light Harvesters in Solar Cells

    Directory of Open Access Journals (Sweden)

    Lioz Etgar

    2013-02-01

    Full Text Available Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

  2. Semiconductor Nanocrystals as Light Harvesters in Solar Cells.

    Science.gov (United States)

    Etgar, Lioz

    2013-02-04

    Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

  3. Semiconductor Nanocrystals as Light Harvesters in Solar Cells

    Science.gov (United States)

    Etgar, Lioz

    2013-01-01

    Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered. PMID:28809318

  4. Vaping cannabis (marijuana): parallel concerns to e-cigs?

    OpenAIRE

    Budney, Alan J.; Sargent, James D.; Lee, Dustin C.

    2015-01-01

    The proliferation of vaporization (‘vaping’) as a method for administering cannabis raises many of the same public health issues being debated and investigated in relation to e-cigarettes (e-cigs). Good epidemiological data on the prevalence of vaping cannabis are not yet available, but with current trends towards societal approval of medicinal and recreational use of cannabis, the pros and cons of vaping cannabis warrant study. As with e-cigs, vaping cannabis portends putative health benefit...

  5. Rational Strategies for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Seo, Jangwon; Noh, Jun Hong; Seok, Sang Il

    2016-03-15

    A long-standing dream in the large scale application of solar energy conversion is the fabrication of solar cells with high-efficiency and long-term stability at low cost. The realization of such practical goals depends on the architecture, process and key materials because solar cells are typically constructed from multilayer heterostructures of light harvesters, with electron and hole transporting layers as a major component. Recently, inorganic-organic hybrid lead halide perovskites have attracted significant attention as light absorbers for the fabrication of low-cost and high-efficiency solar cells via a solution process. This mainly stems from long-range ambipolar charge transport properties, low exciton binding energies, and suitable band gap tuning by managing the chemical composition. In our pioneering work, a new photovoltaic platform for efficient perovskite solar cells (PSCs) was proposed, which yielded a high power conversion efficiency (PCE) of 12%. The platform consisted of a pillared architecture of a three-dimensional nanocomposite of perovskites fully infiltrating mesoporous TiO2, resulting in the formation of continuous phases and perovskite domains overlaid with a polymeric hole conductor. Since then, the PCE of our PSCs has been rapidly increased from 3% to over 20% certified efficiency. The unprecedented increase in the PCE can be attributed to the effective integration of the advantageous attributes of the refined bicontinuous architecture, deposition process, and composition of perovskite materials. Specifically, the bicontinuous architectures used in the high efficiency comprise a layer of perovskite sandwiched between mesoporous metal-oxide layer, which is a very thinner than that of used in conventional dye-sensitized solar cells, and hole-conducting contact materials with a metal back contact. The mesoporous scaffold can affect the hysteresis under different scan direction in measurements of PSCs. The hysteresis also greatly depends on

  6. METHOD AND APPARATUS FOR CHARACTERIZATION OF A SOLAR CELL

    DEFF Research Database (Denmark)

    2017-01-01

    ; and estimating variations in the solar cell, thereby electrically characterizing the solar cell. The disclosure further relates to a solar cell characterization apparatus for characterization of a solar cell, comprising: a light source for generating an optical probe light; a modulation unit, configured...... to produce modulated probe light by modulating the optical probe light with a modulation frequency of between 100 kHz and 0 MHz; a light scanning unit for scanning the modulated probe light such that said modulated probe light is incident on at least a part of the surface of the solar cell; and a 1 signal...

  7. Fabrication and Characterization of Dye-Sensitized Solar Cells

    OpenAIRE

    Mohamed FATHALLAH; Ahmed TORCHANI; Rached GHARBI

    2014-01-01

    Dye-sensitized solar cell (DSSC) constitutes a real revolution in the conversion of solar energy into electricity after 40 years of the invention of silicon solar cells. The working mechanism is based on a photoelectrochemical system, similar to the photosynthesis in plant leaves. The efficiencies of the DSSC are high as those obtained from amorphous silicon solar cells (10-11 %) and intensive efforts are done in different directions to improve this efficiency.

  8. Fabrication and Characterization of Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Mohamed FATHALLAH

    2014-05-01

    Full Text Available Dye-sensitized solar cell (DSSC constitutes a real revolution in the conversion of solar energy into electricity after 40 years of the invention of silicon solar cells. The working mechanism is based on a photoelectrochemical system, similar to the photosynthesis in plant leaves. The efficiencies of the DSSC are high as those obtained from amorphous silicon solar cells (10-11 % and intensive efforts are done in different directions to improve this efficiency.

  9. Recent advances in sensitized mesoscopic solar cells.

    Science.gov (United States)

    Grätzel, Michael

    2009-11-17

    Perhaps the largest challenge for our global society is to find ways to replace the slowly but inevitably vanishing fossil fuel supplies by renewable resources and, at the same time, avoid negative effects from the current energy system on climate, environment, and health. The quality of human life to a large degree depends upon the availability of clean energy sources. The worldwide power consumption is expected to double in the next 3 decades because of the increase in world population and the rising demand of energy in the developing countries. This implies enhanced depletion of fossil fuel reserves, leading to further aggravation of the environmental pollution. As a consequence of dwindling resources, a huge power supply gap of 14 terawatts is expected to open up by year 2050 equaling today's entire consumption, thus threatening to create a planetary emergency of gigantic dimensions. Solar energy is expected to play a crucial role as a future energy source. The sun provides about 120,000 terawatts to the earth's surface, which amounts to 6000 times the present rate of the world's energy consumption. However, capturing solar energy and converting it to electricity or chemical fuels, such as hydrogen, at low cost and using abundantly available raw materials remains a huge challenge. Chemistry is expected to make pivotal contributions to identify environmentally friendly solutions to this energy problem. One area of great promise is that of solar converters generally referred to as "organic photovoltaic cells" (OPV) that employ organic constituents for light harvesting or charge carrier transport. While this field is still in its infancy, it is receiving enormous research attention, with the number of publications growing exponentially over the past decade. The advantage of this new generation of solar cells is that they can be produced at low cost, i.e., potentially less than 1 U.S. $/peak watt. Some but not all OPV embodiments can avoid the expensive and energy

  10. Highly efficient light management for perovskite solar cells.

    Science.gov (United States)

    Wang, Dong-Lin; Cui, Hui-Juan; Hou, Guo-Jiao; Zhu, Zhen-Gang; Yan, Qing-Bo; Su, Gang

    2016-01-06

    Organic-inorganic halide perovskite solar cells have enormous potential to impact the existing photovoltaic industry. As realizing a higher conversion efficiency of the solar cell is still the most crucial task, a great number of schemes were proposed to minimize the carrier loss by optimizing the electrical properties of the perovskite solar cells. Here, we focus on another significant aspect that is to minimize the light loss by optimizing the light management to gain a high efficiency for perovskite solar cells. In our scheme, the slotted and inverted prism structured SiO2 layers are adopted to trap more light into the solar cells, and a better transparent conducting oxide layer is employed to reduce the parasitic absorption. For such an implementation, the efficiency and the serviceable angle of the perovskite solar cell can be promoted impressively. This proposal would shed new light on developing the high-performance perovskite solar cells.

  11. Recent progress in Si thin film technology for solar cells

    Science.gov (United States)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  12. To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell

    Directory of Open Access Journals (Sweden)

    Yu-Jen Hsiao

    2013-01-01

    Full Text Available The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%.

  13. Molybdenum thin film deposited by in-line DC magnetron sputtering as a back contact for Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li Zhaohui; Cho, Eou-Sik [Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam city, Kyunggi-do, 461-701 (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@kyungwon.ac.kr [Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam city, Kyunggi-do, 461-701 (Korea, Republic of)

    2011-09-01

    In this paper, we reported the effect of the power and the working pressure on the molybdenum (Mo) films deposited using an in-line direct current (DC) magnetron sputtering system. The electrical and the structural properties of Mo film were improved by increasing DC power from 1 to 3 kW. On the other side, the resistivity of the Mo films became higher with the increasing working pressure. However, the adhesion property was improved when the working pressure was higher. In this work, in order to obtain an optimal Mo film as a back metal contact of Cu(In,Ga)Se{sub 2} (CIGS) solar cells, a bilayer Mo film was formed through the different film structures depending on the working pressure. The first layer was formed at a high pressure of 12 mTorr for a better adhesion and the second layer was formed at a low pressure of 3 mTorr for a lower resistivity.

  14. FY 2000 report on the results of the development of technology for commercialization of the photovoltaic power system - Development of production technology of thin film solar cells. Separate Volume 1. Development of production technology of low cost/large area modules (Investigational study on the commercialization analysis); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu {sup H}akumaku taiyodenchi no seizo gijutsu kaihatsu{sup -} Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Jitsuyoka kaiseki ni kansuru chosa kenkyu) - 1

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of supporting the study of commercialization of thin film solar cells for electric power use and the study of production technology of thin film solar cells, survey of the technical trend of the thin film solar cell was conducted, and the FY 2000 results were summed up. The typical Si system thin film solar cell is the amorphous Si solar cell, and the quantity production has already started in Japan and abroad. Further, with the aim of making use of characteristics of the amorphous Si solar cell and also making its defects up, the development of Si thin film solar cell using microcrystal Si and polycrystal Si is greatly expected. Among those, attention is paid to the hybrid type that was proposed for the remarkable improvement in the conversion efficiency of amorphous Si solar cell. In the compound thin film system, the Cu(InGa)Se{sub 2}(CiGS) solar cell was put on the market as product by SSI, though the market scale is small. Further, as to the CdTe thin film solar cell, trial manufacture of the large area module was made in view of the housing use. In addition, there was seen great progress in the color sensitized cell and organic semiconducting solar cell mainly in the U.S. and Europe. (NEDO)

  15. Perovskite Materials: Solar Cell and Optoelectronic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bin [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  16. Thin-film polycrystalline silicon solar cells

    Science.gov (United States)

    Funghnan, B. W.; Blanc, J.; Phillips, W.; Redfield, D.

    1980-08-01

    Thirty-four new solar cells were fabricated on Wacker Sislo substrates and the AM-1 parameters were measured. A detailed comparison was made between the measurement of minority carrier diffusion length by the OE method and the penetrating light laser scan grain boundary photoresponse linewidth method. The laser scan method has more experimental uncertainty and agrees within 10 to 50% with the QE method. It allows determination of L over a large area. Atomic hydrogen passivation studies continued on Wacker material by three techniques. A method of determining surface recombination velocity, s, from laser scan data was developed. No change in s in completed solar cells after H-plasma treatment was observed within experimental error. H-passivation of bare silicon cars as measured by the new laser scan photoconductivity technique showed very large effects.

  17. A Bicontinuous Double Gyroid Hybrid Solar Cell

    KAUST Repository

    Crossland, Edward J. W.

    2009-08-12

    We report the first successful application of an ordered bicontinuous gyroid semiconducting network in a hybrid bulk heterojunction solar cell. The freestanding gyroid network is fabricated by electrochemical deposition into the 10 nm wide voided channels of a self-assembled, selectively degradable block copolymer film. The highly ordered pore structure is ideal for uniform infiltration of an organic hole transporting material, and solid-state dye-sensitized solar cells only 400 nm thick exhibit up to 1.7% power conversion efficiency. This patterning technique can be readily extended to other promising heterojunction systems and is a major step toward realizing the full potential of self-assembly in the next generation of device technologies. © 2009 American Chemical Society.

  18. Plasmonic Dye-Sensitized Solar Cells

    KAUST Repository

    Ding, I-Kang

    2010-12-14

    This image presents a scanning electron microscopy image of solid state dye-sensitized solar cell with a plasmonic back reflector, overlaid with simulated field intensity plots when monochromatic light is incident on the device. Plasmonic back reflectors, which consist of 2D arrays of silver nanodomes, can enhance absorption through excitation of plasmonic modes and increased light scattering, as reported by Michael D. McGehee, Yi Cui, and co-workers.

  19. Milestones Toward 50% Efficient Solar Cell Modules

    Science.gov (United States)

    2007-09-01

    efficiency, both at solar cells and module level. The optical system consists of a tiled nonimaging concentrating system, coupled with a spectral...which combines a nonimaging optical concentrator (which does not require tracking and is called a static concentrator) with spectral splitting...DESIGN AND RESULTS The optical design is based on non-symmetric, nonimaging optics, tiled into an array. The central issues in the optical system

  20. Nanostructured dye-sensitized solar cells

    OpenAIRE

    Palma, Giuseppina

    2014-01-01

    2012/2013 Dye-sensitized solar cells (DSSCs) represent a promising alternative to silicon-based technology. From the first publications about DSSCs in the 90s, they are considered an important breakthrough for achieving high efficiency by using relatively inexpensive and abundant materials. Stability and efficiency are two crucial points in the development of this new class of hybrid photovoltaic devices. Most of the DSSC studies carried out over the past twenty years are based on the o...

  1. Assessing Rare Metal Availability Challenges for Solar Energy Technologies

    Directory of Open Access Journals (Sweden)

    Leena Grandell

    2015-08-01

    Full Text Available Solar energy is commonly seen as a future energy source with significant potential. Ruthenium, gallium, indium and several other rare elements are common and vital components of many solar energy technologies, including dye-sensitized solar cells, CIGS cells and various artificial photosynthesis approaches. This study surveys solar energy technologies and their reliance on rare metals such as indium, gallium, and ruthenium. Several of these rare materials do not occur as primary ores, and are found as byproducts associated with primary base metal ores. This will have an impact on future production trends and the availability for various applications. In addition, the geological reserves of many vital metals are scarce and severely limit the potential of certain solar energy technologies. It is the conclusion of this study that certain solar energy concepts are unrealistic in terms of achieving TW scales.

  2. Accelerated stress testing of terrestrial solar cells

    Science.gov (United States)

    Lathrop, J. W.; Hawkins, D. C.; Prince, J. L.; Walker, H. A.

    1982-01-01

    The development of an accelerated test schedule for terrestrial solar cells is described. This schedule, based on anticipated failure modes deduced from a consideration of IC failure mechanisms, involves bias-temperature testing, humidity testing (including both 85-85 and pressure cooker stress), and thermal-cycle thermal-shock testing. Results are described for 12 different unencapsulated cell types. Both gradual electrical degradation and sudden catastrophic mechanical change were observed. These effects can be used to discriminate between cell types and technologies relative to their reliability attributes. Consideration is given to identifying laboratory failure modes which might lead to severe degradation in the field through second quadrant operation. Test results indicate that the ability of most cell types to withstand accelerated stress testing depends more on the manufacturer's design, processing, and worksmanship than on the particular metallization system. Preliminary tests comparing accelerated test results on encapsulated and unencapsulated cells are described.

  3. PbSe Nanocrystal Excitonic Solar Cells

    KAUST Repository

    Choi, Joshua J.

    2009-11-11

    We report the design, fabrication, and characterization of colloidal PbSe nanocrystal (NC)-based photovoltaic test structures that exhibit an excitonic solar cell mechanism. Charge extraction from the NC active layer is driven by a photoinduced chemical potential energy gradient at the nanostructured heterojunction. By minimizing perturbation to PbSe NC energy levels and thereby gaining insight into the "intrinsic" photovoltaic properties and charge transfer mechanism of PbSe NC, we show a direct correlation between interfacial energy level offsets and photovoltaic device performance. Size dependent PbSe NC energy levels were determined by cyclic voltammetry and optical spectroscopy and correlated to photovoltaic measurements. Photovoltaic test structures were fabricated from PbSe NC films sandwiched between layers of ZnO nanoparticles and PEDOT:PSS as electron and hole transporting elements, respectively. The device current-voltage characteristics suggest a charge separation mechanism that Is distinct from previously reported Schottky devices and consistent with signatures of excitonic solar cells. Remarkably, despite the limitation of planar junction structure, and without film thickness optimization, the best performing device shows a 1-sun power conversion efficiency of 3.4%, ranking among the highest performing NC-based solar cells reported to date. © 2009 American Chemical Society.

  4. Crossed BiOI flake array solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Kewei; Jia, Falong; Zhang, Lizhi [Key Laboratory of Pesticide and Chemical Biology of Ministry of Education, College of Chemistry, Central China Normal University, Wuhan (China); Zheng, Zhi [Institute of Surface Micro and Nano Materials, Xuchang University (China)

    2010-12-15

    We report a new kind of solar cell based on crossed flake-like BiOI arrays for the first time. The BiOI flake arrays were fabricated on an FTO glass with a TiO{sub 2} block layer at room temperature by successive ionic layer adsorption and reaction (SILAR) method. The resulting BiOI flake array solar cell exhibited enhanced photovoltaic performance under solar illumination. This work provides an attractive and new solar cell system and a facile route to fabricate low cost and non-toxic solar cell. (author)

  5. Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

    International Nuclear Information System (INIS)

    Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

    2012-01-01

    Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

  6. Alloyed Aluminum Contacts for Silicon Solar Cells

    International Nuclear Information System (INIS)

    Tin Tin Aye

    2010-12-01

    Aluminium is usually deposited and alloyed at the back of p-p silicon solar cell for making a good ohmic contact and establishing a back electric field which avoids carrier recombination of the back surface. It was the deposition of aluminum on multicrystalline silicon (mc-Si) substrate at various annealing temperature. Physical and elemental analysis was carried out by using scanning electron microscopy (SEM) and X-rays diffraction (XRD). The electrical (I-V) characteristic of the photovoltaic cell was also measured.

  7. Recent Advances in High Efficiency Solar Cells

    Institute of Scientific and Technical Information of China (English)

    Yoshio; Ohshita; Hidetoshi; Suzuki; Kenichi; Nishimura; Masafumi; Yamaguchi

    2007-01-01

    1 Results The conversion efficiency of sunlight to electricity is limited around 25%,when we use single junction solar cells. In the single junction cells,the major energy losses arise from the spectrum mismatching. When the photons excite carriers with energy well in excess of the bandgap,these excess energies were converted to heat by the rapid thermalization. On the other hand,the light with lower energy than that of the bandgap cannot be absorbed by the semiconductor,resulting in the losses. One way...

  8. Solar energy powered microbial fuel cell with a reversible bioelectrode

    NARCIS (Netherlands)

    Strik, D.P.B.T.B.; Hamelers, H.V.M.; Buisman, C.J.N.

    2010-01-01

    The solar energy powered microbial fuel cell is an emerging technology for electricity generation via electrochemically active microorganisms fueled by solar energy via in situ photosynthesized metabolites from algae, cyanobacteria, or living higher plants. A general problem with microbial fuel

  9. Interactive Visual Analysis for Organic Photovoltaic Solar Cells

    KAUST Repository

    Abouelhassan, Amal A.

    2017-01-01

    Organic Photovoltaic (OPV) solar cells provide a promising alternative for harnessing solar energy. However, the efficient design of OPV materials that achieve better performance requires support by better-tailored visualization tools than

  10. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  11. High Temperature InGaN-based Solar Cells

    Data.gov (United States)

    National Aeronautics and Space Administration — An efficient generation of solar power in a space environment is an enduring challenging for all NASA missions. The current available solar cells, however, suffer...

  12. Temperature dependence of organic solar cell parameters

    Energy Technology Data Exchange (ETDEWEB)

    Richter, Matthias; Mueller, Klaus; Philip, Shine; Paloumpa, Ioanna; Henkel, Karsten; Schmeisser, Dieter [Brandenburgische Technische Universitaet Cottbus (Germany). Angewandte Physik - Sensorik

    2009-07-01

    The influence of an annealing step on the parameters of bulk heterojunction organic solar cells is investigated. In order to fabricate the solar cells we use glass coated with ITO (indium-tin oxide) as a substrate on which the active layer consisting of P3HT and PCBM is spincoated. Al-electrodes are evaporated on top of the active layer. We use PEDOT:PSS as buffer layer. Each sample is annealed at different temperatures for a short time. Between every temperature step the I-V characteristic of the cell is measured. The following parameters are derived afterwards: FF, I{sub sc} (density), V{sub oc}. Also the efficiency is estimated. The results show a maximum cell efficiency for drying at 100 C for 20sec. A further important step for preparation is the drying procedure of the PEDOT:PSS layer. Here an improvement of about 50% in cell efficiency is measured after drying at 50 C for 5 days under inert gas atmosphere.

  13. Materials That Enhance Efficiency and Radiation Resistance of Solar Cells

    Science.gov (United States)

    Sun, Xiadong; Wang, Haorong

    2012-01-01

    A thin layer (approximately 10 microns) of a novel "transparent" fluorescent material is applied to existing solar cells or modules to effectively block and convert UV light, or other lower solar response waveband of solar radiation, to visible or IR light that can be more efficiently used by solar cells for additional photocurrent. Meanwhile, the layer of fluorescent coating material remains fully "transparent" to the visible and IR waveband of solar radiation, resulting in a net gain of solar cell efficiency. This innovation alters the effective solar spectral power distribution to which an existing cell gets exposed, and matches the maximum photovoltaic (PV) response of existing cells. By shifting a low PV response waveband (e.g., UV) of solar radiation to a high PV response waveband (e.g. Vis-Near IR) with novel fluorescent materials that are transparent to other solar-cell sensitive wavebands, electrical output from solar cells will be enhanced. This approach enhances the efficiency of solar cells by converting UV and high-energy particles in space that would otherwise be wasted to visible/IR light. This innovation is a generic technique that can be readily implemented to significantly increase efficiencies of both space and terrestrial solar cells, without incurring much cost, thus bringing a broad base of economical, social, and environmental benefits. The key to this approach is that the "fluorescent" material must be very efficient, and cannot block or attenuate the "desirable" and unconverted" waveband of solar radiation (e.g. Vis-NIR) from reaching the cells. Some nano-phosphors and novel organometallic complex materials have been identified that enhance the energy efficiency on some state-of-the-art commercial silicon and thin-film-based solar cells by over 6%.

  14. Enhancing Solar Cell Efficiency Using Photon Upconversion Materials.

    Science.gov (United States)

    Shang, Yunfei; Hao, Shuwei; Yang, Chunhui; Chen, Guanying

    2015-10-27

    Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous), gallium arsenide (GaAs) solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed.

  15. Enhancing Solar Cell Efficiency Using Photon Upconversion Materials

    Directory of Open Access Journals (Sweden)

    Yunfei Shang

    2015-10-01

    Full Text Available Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous, gallium arsenide (GaAs solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed

  16. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Volume 1. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture low-cost large-area modules and survey and research on analyzing how to put products into practical use); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu 1))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to assist research and development to put thin film solar cells for power use into practical use and a research to put thin film solar cell manufacturing technologies into practical use, survey and research have been performed on trends in the technologies inside and outside the country. Characteristic points in thin film solar cells during the current fiscal year include: expansion of production scale of amorphous silicon solar cells, rapid progress in poly-crystalline silicon thin film solar cell technologies, and enhancement of performance in large-area modules in the a-Si, CIGS, and CdTe systems. In the trends in research and development of amorphous systems, expectation is heightening on elucidation of optical deterioration phenomena, and establishment of suppression technologies thereof. Although the highest efficiency was not renewed in thin film solar cells of small areas, progress was seen in the post-stabilization efficiency in large-area modules. A thin film solar cell manufacturing plant having an annual production capacity of 20 MW was put into operation in October in Japan. Micro (poly) crystalline silicon based solar cells have high possibility of being compatible in cost reduction and performance improvement, and energetic researches are being carried out on them in recent years as the most promising candidate of the next generation solar cells. (NEDO)

  17. Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

    Science.gov (United States)

    Kim, Jekyung; Shin, Byungha

    2017-09-01

    Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

  18. Si Wire-Array Solar Cells

    Science.gov (United States)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  19. Applications of Laser Precisely Processing Technology in Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    According to the design method of laser resonator cavity, we optimized the primary parameters of resonator and utilized LD arrays symmetrically pumping manner to implementing output of the high-brightness laser in our laser cutter, then which was applied to precisely cutting the conductive film of CuInSe2 solar cells, the buried contact silicon solar cells' electrode groove, and perforating in wafer which is used to the emitter wrap through silicon solar cells. Laser processing precision was less than 40μm, the results have met solar cell's fabrication technology, and made finally the buried cells' conversion efficiency be improved from 18% to 21% .

  20. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer