Sample records for chemoresponsive monolayer transistors

  1. Gas sensing with self-assembled monolayer field-effect transistors

    NARCIS (Netherlands)

    Andringa, Anne-Marije; Spijkman, Mark-Jan; Smits, Edsger C. P.; Mathijssen, Simon G. J.; van Hal, Paul A.; Setayesh, Sepas; Willard, Nico P.; Borshchev, Oleg V.; Ponomarenko, Sergei A.; Blom, Paul W. M.; de Leeuw, Dago M.

    A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for

  2. Multifunctional Self-Assembled Monolayers for Organic Field-Effect Transistors (United States)

    Cernetic, Nathan

    Organic field effect transistors (OFETs) have the potential to reach commercialization for a wide variety of applications such as active matrix display circuitry, chemical and biological sensing, radio-frequency identification devices and flexible electronics. In order to be commercially competitive with already at-market amorphous silicon devices, OFETs need to approach similar performance levels. Significant progress has been made in developing high performance organic semiconductors and dielectric materials. Additionally, a common route to improve the performance metric of OFETs is via interface modification at the critical dielectric/semiconductor and electrode/semiconductor interface which often play a significant role in charge transport properties. These metal oxide interfaces are typically modified with rationally designed multifunctional self-assembled monolayers. As means toward improving the performance metrics of OFETs, rationally designed multifunctional self-assembled monolayers are used to explore the relationship between surface energy, SAM order, and SAM dipole on OFET performance. The studies presented within are (1) development of a multifunctional SAM capable of simultaneously modifying dielectric and metal surface while maintaining compatibility with solution processed techniques (2) exploration of the relationship between SAM dipole and anchor group on graphene transistors, and (3) development of self-assembled monolayer field-effect transistor in which the traditional thick organic semiconductor is replaced by a rationally designed self-assembled monolayer semiconductor. The findings presented within represent advancement in the understanding of the influence of self-assembled monolayers on OFETs as well as progress towards rationally designed monolayer transistors.

  3. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen


    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  4. N-type self-assembled monolayer field-effect transistors

    NARCIS (Netherlands)

    Ringk, A.; Li, X.; Gholamrezaie, F.; Smits, E.C.P.; Neuhold, A.; Moser, A.; Gelinck, G.H.; Resel, R.; Leeuw, D.M. de; Strohriegl, P.


    Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a

  5. Organosilicon derivatives of BTBT for monolayer organic field effect transistors (United States)

    Agina, Elena V.; Polinskaya, Marina S.; Trul, Askold A.; Chekusova, Viktoria P.; Sizov, Alexey S.; Borshchev, Oleg V.; Ponomarenko, Sergey A.


    Synthesis of novel organosilicon derivatives of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) linked though flexible aliphatic spacers to a disiloxane anchor group is reported. They were successfully used in monolayer OFETs with the charge carrier mobilities up to 0.02 cm2 /Vs, threshold voltage close to 0 V and On/Off ratio up to 10,000. Influence of the chemical structure of the molecules synthesized on the morphology, molecular 2D ordering in the monolayers and their semiconducting properties is considered. The effect of different methods of the ultrathin semiconducting layer preparation, such as Langmuir-Blodgett, Langmuir-Schaefer, spin coating or doctor blade, on the OFET performance is discussed.

  6. Regulating charge injection in ambipolar organic field-effect transistors by mixed self-assembled monolayers. (United States)

    Xu, Yong; Baeg, Kang-Jun; Park, Won-Tae; Cho, Ara; Choi, Eun-Young; Noh, Yong-Young


    We report on a technique using mixed self-assembled monolayers (SAMs) to finely regulate ambipolar charge injection in polymer organic field-effect transistors. Differing from the other works that employ single SAM specifically for efficient charge injection in p-type and n-type transistors, we blend two different SAMs of alkyl- and perfluoroalkyl thiols at different ratios and apply them to ambipolar OFETs and inverter. Thanks to the utilization of ambipolar semiconductor and one SAM mixture, the device and circuit fabrications are facile with only one step for semiconductor deposition and another for SAM treatment. This is much simpler with respect to the conventional scheme for the unipolar-device-based complementary circuitry that demands separate deposition and processing for individual p-channel and n-channel transistors. Our results show that the mixed-SAM treatments not only improve ambipolar charge injection manifesting as higher hole- and electron-mobility and smaller threshold voltage but also gradually tune the device characteristics to reach a desired condition for circuit application. Therefore, this simple but useful approach is promising for ambipolar electronics.

  7. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

    KAUST Repository

    Lin, Che-Yu


    High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.

  8. Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors. (United States)

    Lee, Wi Hyoung; Park, Jaesung; Sim, Sung Hyun; Lim, Soojin; Kim, Kwang S; Hong, Byung Hee; Cho, Kilwon


    Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.

  9. Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

    Directory of Open Access Journals (Sweden)

    Keanchuan Lee


    Full Text Available A silver nanoparticles self-assembled monolayer (SAM was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V and impedance spectroscopy (IS measurements. The I − V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state.

  10. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide (United States)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan


    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  11. Chemical vapor deposition grown monolayer graphene field-effect transistors with reduced impurity concentration (United States)

    Ha, Tae-Jun; Lee, Alvin


    We report on the restoration of the electronic characteristics of waferscale chemical vapor deposition (CVD) monolayer graphene field-effect transistors (GFETs) by reducing the impurity concentration. An optimized electropolishing process on copper foils combined with carbon-fluorine encapsulation using a suitable amorphous fluoropolymer enables reducing the surface roughness of graphene and screening out interfacial impurity scattering, which leads to an improvement in all key device metrics. The conductivity at the Dirac point is substantially reduced, resulting in an increase in the on-off current ratio. In addition, the field-effect mobility increased from 1817 to 3918 cm2/V-s, the impurity concentration decreased from 1.1 × 1012 to 2.1 × 1011 cm-2 and the electron and hole transport became more symmetric. Significantly, favorable shifts toward zero voltage were observed in the Dirac point. We postulate that the smoother surface due to electropolishing and a pool of strong dipole-dipole moments in the flouropolymer coating provide a charge buffer that relaxes the fluctuation in the electron-hole puddles. We also investigate the long-term stability in GFETs encapsulated with fluoropolymer, which exhibit a high hydrophobicity that suppresses the chemical interaction with water molecules. [Figure not available: see fulltext.

  12. High-performance and high-sensitivity applications of graphene transistors with self-assembled monolayers. (United States)

    Yeh, Chao-Hui; Kumar, Vinod; Moyano, David Ricardo; Wen, Shao-Hsuan; Parashar, Vyom; Hsiao, She-Hsin; Srivastava, Anchal; Saxena, Preeti S; Huang, Kun-Ping; Chang, Chien-Chung; Chiu, Po-Wen


    Charge impurities and polar molecules on the surface of dielectric substrates has long been a critical obstacle to using graphene for its niche applications that involve graphene's high mobility and high sensitivity nature. Self-assembled monolayers (SAMs) have been found to effectively reduce the impact of long-range scatterings induced by the external charges. Yet, demonstrations of scalable device applications using the SAMs technique remains missing due to the difficulties in the device fabrication arising from the strong surface tension of the modified dielectric environment. Here, we use patterned SAM arrays to build graphene electronic devices with transport channels confined on the modified areas. For high-mobility applications, both rigid and flexible radio-frequency graphene field-effect transistors (G-FETs) were demonstrated, with extrinsic cutoff frequency and maximum oscillation frequency enhanced by a factor of ~2 on SiO2/Si substrates. For high sensitivity applications, G-FETs were functionalized by monoclonal antibodies specific to cancer biomarker chondroitin sulfate proteoglycan 4, enabling its detection at a concentration of 0.01 fM, five orders of magnitude lower than that detectable by a conventional colorimetric assay. These devices can be very useful in the early diagnosis and monitoring of a malignant disease. Copyright © 2015 Elsevier B.V. All rights reserved.

  13. Novel self-assembled phosphonic acids monolayers applied in N-channel perylene diimide (PDI) organic field effect transistors (United States)

    Cheng, Heng; Huai, Jinyue; Cao, Li; Li, Zhefeng


    Phosphoric acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs). This efficient interface modification is helpful for semiconductor layer to form crystal thin film during vapor deposition. Results show that the PDI-i8C based OFETs with PA SAMs exhibit field-effect mobilities up to 0.014 cm2 V-1 s-1 (with ODPA as SAMs), which is over 500 times higher than the device without SAMs. Also, transistors with Naph6PA as SAMs show up to 1.5 × 10-3 cm2 V-1 s-1. By studying the morphology of semiconductor layer and SAMs surface, it is found that ODPA bilayer structure plays a key role in inducing PDI-i8C to form orderly crystal thin film.

  14. Easily processable highly ordered Langmuir-Blodgett films of quaterthiophene disiloxane dimer for monolayer organic field-effect transistors. (United States)

    Sizov, Alexey S; Anisimov, Daniil S; Agina, Elena V; Borshchev, Oleg V; Bakirov, Artem V; Shcherbina, Maxim A; Grigorian, Souren; Bruevich, Vladimir V; Chvalun, Sergei N; Paraschuk, Dmitry Yu; Ponomarenko, Sergei A


    Self-assembly of highly soluble water-stable tetramethyldisiloxane-based dimer of α,α'-dialkylquaterthiophene on the water-air interface was investigated by Langmuir, grazing incidence X-ray diffraction, and X-ray reflectivity techniques. The conditions for formation of very homogeneous crystalline monolayer Langmuir-Blodgett (LB) films of the oligomer were found. Monolayer organic field-effect transistors (OFETs) based on these LB films as a semiconducting layer showed hole mobilities up to 3 × 10(-3) cm(2)/(V s), on-off ratio of 10(5), small hysteresis, and high long-term stability. The electrical performance of the LB films studied is close to that for the same material in the bulk or in the monolayer OFETs prepared from water vapor sensitive chlorosilyl derivatives of quaterthiophene by self-assembling from solution. These findings show high potential of disiloxane-based LB films in monolayer OFETs for large-area organic electronics.

  15. Reducing leakage currents in n-channel organic field-effect transistors using molecular dipole monolayers on nanoscale oxides. (United States)

    Martínez Hardigree, Josué F; Dawidczyk, Thomas J; Ireland, Robert M; Johns, Gary L; Jung, Byung-Jun; Nyman, Mathias; Osterbacka, Ronald; Marković, Nina; Katz, Howard E


    Leakage currents through the gate dielectric of thin film transistors remain a roadblock to the fabrication of organic field-effect transistors (OFETs) on ultrathin dielectrics. We report the first investigation of a self-assembled monolayer (SAM) dipole as an electrostatic barrier to reduce leakage currents in n-channel OFETs fabricated on a minimal, leaky ∼10 nm SiO2 dielectric on highly doped Si. The electric field associated with 1H,1H,2H,2H-perfluoro-octyltriethoxysilane (FOTS) and octyltriethoxysilane (OTS) dipolar chains affixed to the oxide surface of n-Si gave an order of magnitude decrease in gate leakage current and subthreshold leakage and a two order-of-magnitude increase in ON/OFF ratio for a naphthalenetetracarboxylic diimide (NTCDI) transistor. Identically fabricated devices on p-Si showed similarly reduced leakage and improved performance for oxides treated with the larger dipole FOTS monolayer, while OTS devices showed poorer transfer characteristics than those on bare oxide. Comparison of OFETs on both substrates revealed that relative device performance from OTS and FOTS treatments was dictated primarily by the organosilane chain and not the underlying siloxane-substrate bond. This conclusion is supported by the similar threshold voltages (VT) extrapolated for SAM-treated devices, which display positive relative VT shifts for FOTS on either substrate but opposite VT shifts for OTS treatment on n-Si and p-Si. Our results highlight the potential of dipolar SAMs as performance-enhancing layers for marginal quality dielectrics, broadening the material spectrum for low power, ultrathin organic electronics.

  16. Modeling of anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene metal-oxide semiconductor field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Jiwon [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)


    Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the channel length scaling on device performances. Especially, the role of degenerate conduction band (CB) valleys in monolayer HfS{sub 2} is comprehensively analyzed. Benchmarking monolayer HfS{sub 2} with phosphorene MOSFETs, we predict that the effect of channel orientation on device performances is much weaker in monolayer HfS{sub 2} than in phosphorene due to the degenerate CB valleys of monolayer HfS{sub 2}. Our simulations also reveal that at 10 nm channel length scale, phosphorene MOSFETs outperform monolayer HfS{sub 2} MOSFETs in terms of the on-state current. However, it is observed that monolayer HfS{sub 2} MOSFETs may offer comparable, but a little bit degraded, device performances as compared with phosphorene MOSFETs at 5 nm channel length.

  17. Impact of self-assembled monolayer on low frequency noise of organic thin film transistors

    International Nuclear Information System (INIS)

    Ke Lin; Dolmanan, Surani Bin; Shen Lu; Vijila, Chellappan; Chua, Soo Jin; Png, R.-Q.; Chia, P.-J.; Chua, L.-L.; Ho, Peter K-H.


    Bottom-contact organic field-effect transistors (FETs) based on regioregular poly(3-hexylthiophene) were fabricated with different surface treatments and were evaluated using a low frequency noise (LFN) spectroscopy. The oxygen-plasma (OP) treated device shows the highest mobility with the lowest current fluctuation. Octadecyltrichlorosilane and perfluorodecyldimetylchlorosilane treated device gives a higher noise compared with the OP treated device. Hexamethyldisilazane treated devices show the highest noise but the lowest mobility. The LFN results are correlated with organic FET device mobility and stability, proved by channel material crystallinity and degree of dislocations analysis. LFN measurement provides a nondisruptive and direct methodology to characterize device performance

  18. Electric bistability induced by incorporating self-assembled monolayers/aggregated clusters of azobenzene derivatives in pentacene-based thin-film transistors. (United States)

    Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai


    Composite films of pentacene and a series of azobenzene derivatives are prepared and used as the active channel material in top-contact, bottom-gate field-effect transistors. The transistors exhibit high field-effect mobility as well as large I-V hysteresis as a function of the gate bias history. The azobenzene moieties, incorporated either in the form of self-assembled monolayer or discrete multilayer clusters at the dielectric surface, result in electric bistability of the pentacene-based transistor either by photoexcitation or gate biasing. The direction of threshold voltage shifts, size of hysteresis, response time, and retention characteristics all strongly depend on the substituent on the benzene ring. The results show that introducing a monolayer of azobenzene moieties results in formation of charge carrier traps responsible for slower switching between the bistable states and longer retention time. With clusters of azobenzene moieties as the trap sites, the switching is faster but the retention is shorter. Detailed film structure analyses and correlation with the transistor/memory properties of these devices are provided.

  19. Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor (United States)

    Liu, Pang-Shiuan; Lin, Ching-Ting; Hudec, Boris; Hou, Tuo-Hung


    Carrier transport in layered transition-metal dichalcogenides is highly sensitive to surrounding charges because of the atomically thin thickness. By exploiting this property, we report a new internal current amplification mechanism through positive feedback induced by dielectric hole trapping in a MoS2 back-gate transistor on a tantalum oxide substrate. The device exhibits an extremely steep subthreshold slope of 17 mV/decade, which is strongly dependent on the substrate material and drain bias. The steep subthreshold slope is attributed to the internal current amplification arising from the positive feedback between hole generation in MoS2 triggered by large lateral electric field and Schottky barrier narrowing induced by localized hole trapping in tantalum oxide near the source contact.

  20. Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors (United States)

    Yang, Qizhi; Fang, Jiajia; Zhang, Guangru; Wang, Quan


    The use of two-dimensional nanostructured molybdenum disulfide (MoS2) films in field-effect transistors (FETs) in place of graphene was investigated. Monolayer MoS2 films were fabricated by chemical vapor deposition. The output and transfer curves of supported and suspended MoS2 FETs were measured. The mobility of the suspended device reached 364.2 cm2 V-1 s-1 at 150 °C. The hysteresis of the supported device in transfer curves was much larger than that of the suspended device, and it increased at higher temperatures. These results indicate that the device mobility was limited by Coulomb scattering at ambient temperature, and surface/interface phonon scattering at 150 °C, and the injection of electrons, via quantum tunneling through the Schottky barrier at the contact, was enhanced at higher temperatures and led to the increase of the hysteresis. The suspended MoS2 films show potential for application as a channel material in electronic devices, and further understanding the causes of hysteresis in a material is important for its use in technologies, such as memory devices and sensing cells.

  1. Self-assembled monolayer exchange reactions as a tool for channel interface engineering in low-voltage organic thin-film transistors. (United States)

    Lenz, Thomas; Schmaltz, Thomas; Novak, Michael; Halik, Marcus


    In this work, we compared the kinetics of monolayer self-assembly long-chained carboxylic acids and phosphonic acids on thin aluminum oxide surfaces and investigated their dielectric properties in capacitors and low-voltage organic thin-film transistors. Phosphonic acid anchor groups tend to substitute carboxylic acid molecules on aluminum oxide surfaces and thus allow the formation of mixed or fully exchanged monolayers. With different alkyl chain substituents (n-alkyl or fluorinated alkyl chains), the exchange reaction can be monitored as a function of time by static contact angle measurements. The threshold voltage in α,α'-dihexyl-sexithiophene thin-film transistors composed of such mixed layer dielectrics correlates with the exchange progress and can be tuned from negative to positive values or vice versa depending on the dipole moment of the alkyl chain substituents. The change in the dipole moment with increasing exchange time also shifts the capacitance of these devices. The rate constants for exchange reactions determined by the time-dependent shift of static contact angle, threshold voltage, and capacitance exhibit virtually the same value thus proving the exchange kinetics to be highly controllable. In general, the exchange approach is a powerful tool in interface engineering, displaying a great potential for tailoring of device characteristics.

  2. Surface Decoration on Polymeric Gate Dielectrics for Flexible Organic Field-Effect Transistors via Hydroxylation and Subsequent Monolayer Self-Assembly. (United States)

    Yan, Yan; Huang, Long-Biao; Zhou, Ye; Han, Su-Ting; Zhou, Li; Sun, Qijun; Zhuang, Jiaqing; Peng, Haiyan; Yan, He; Roy, V A L


    A simple photochemical reaction based on confined photocatalytic oxidation (CPO) treatment and hydrolysis was employed to efficiently convert C-H bonds into C-OH groups on polymeric material surfaces, followed by investigation of monolayer self-assembly decoration on polymeric dielectrics via chemical bonding for the organic field-effect transistors (OFETs) applications. This method is a low temperature process and has negligible etching effect on polymeric dielectric layers. Various types of self-assembled monolayers have been tested and successfully attached onto the hydroxylated polymeric dielectric surfaces through chemical bonding, ensuring the stability of decorated functional films during the subsequent device fabrication consisting of solution processing of the polymer active layer. With the surface decoration of functional groups, both n-type and p-type polymers exhibit enhanced carrier mobilities in the unipolar OFETs. In addition, enhanced and balanced mobilities are obtained in the ambipolar OFETs with the blend of polymer semiconductors. The anchored self-assembled monolayers on the dielectric surfaces dramatically preclude the solvent effect, thus enabling an improvement of carrier mobility up to 2 orders of magnitude. Our study opens a way of targeted modifications of polymeric surfaces and related applications in organic electronics.

  3. Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors (United States)

    Kawanago, Takamasa; Ikoma, Ryo; Oba, Tomoaki; Takagi, Hiroyuki


    In this study, radical oxidation is applied to the fabrication of a hybrid self-assembled monolayer (SAM)/hafnium oxide (HfOx) gate dielectric in molybdenum disulfide (MoS2) field-effect transistors. The fabrication process involves radical oxidation to form HfOx at the surface of metallic HfN, SAM formation by immersion, and the deterministic transfer of MoS2 flakes. A subthreshold slope of 75 mV/dec and small hysteresis were demonstrated, indicating superior interfacial properties. Cross-sectional transmission electron microscopy revealed the uniform formation of the HfOx layer at the surface of HfN. The SAM is indispensable for the superior interfacial properties in MoS2 field-effect transistors. The radical oxidation is not restricted to the oxidation of silicon and germanium substrates and was also found to be applicable to the fabrication of a high-k gate dielectric. This study opens up interesting possibilities of radical oxidation for research on functional electronic devices.

  4. Methods for Studying Ciliary-Mediated Chemoresponse in Paramecium. (United States)

    Valentine, Megan Smith; Van Houten, Judith L


    Paramecium is a useful model organism for the study of ciliary-mediated chemical sensing and response. Here we describe ways to take advantage of Paramecium to study chemoresponse.Unicellular organisms like the ciliated protozoan Paramecium sense and respond to chemicals in their environment (Van Houten, Ann Rev Physiol 54:639-663, 1992; Van Houten, Trends Neurosci 17:62-71, 1994). A thousand or more cilia that cover Paramecium cells serve as antennae for chemical signals, similar to ciliary function in a large variety of metazoan cell types that have primary or motile cilia (Berbari et al., Curr Biol 19(13):R526-R535, 2009; Singla V, Reiter J, Science 313:629-633, 2006). The Paramecium cilia also produce the motor output of the detection of chemical cues by controlling swimming behavior. Therefore, in Paramecium the cilia serve multiple roles of detection and response.We present this chapter in three sections to describe the methods for (1) assaying populations of cells for their behavioral responses to chemicals (attraction and repulsion), (2) characterization of the chemoreceptors and associated channels of the cilia using proteomics and binding assays, and (3) electrophysiological analysis of individual cells' responses to chemicals. These methods are applied to wild type cells, mutants, transformed cells that express tagged proteins, and cells depleted of gene products by RNA Interference (RNAi).

  5. The Prognostic 97 Chemoresponse Gene Signature in Ovarian Cancer. (United States)

    Matondo, Abel; Jo, Yong Hwa; Shahid, Muhammad; Choi, Tae Gyu; Nguyen, Minh Nam; Nguyen, Ngoc Ngo Yen; Akter, Salima; Kang, Insug; Ha, Joohun; Maeng, Chi Hoon; Kim, Si-Young; Lee, Ju-Seog; Kim, Jayoung; Kim, Sung Soo


    Patient diagnosis and care would be significantly improved by understanding the mechanisms underlying platinum and taxane resistance in ovarian cancer. Here, we aim to establish a gene signature that can identify molecular pathways/transcription factors involved in ovarian cancer progression, poor clinical outcome, and chemotherapy resistance. To validate the robustness of the gene signature, a meta-analysis approach was applied to 1,020 patients from 7 datasets. A 97-gene signature was identified as an independent predictor of patient survival in association with other clinicopathological factors in univariate [hazard ratio (HR): 3.0, 95% Confidence Interval (CI) 1.66-5.44, p = 2.7E-4] and multivariate [HR: 2.88, 95% CI 1.57-5.2, p = 0.001] analyses. Subset analyses demonstrated that the signature could predict patients who would attain complete or partial remission or no-response to first-line chemotherapy. Pathway analyses revealed that the signature was regulated by HIF1α and TP53 and included nine HIF1α-regulated genes, which were highly expressed in non-responders and partial remission patients than in complete remission patients. We present the 97-gene signature as an accurate prognostic predictor of overall survival and chemoresponse. Our signature also provides information on potential candidate target genes for future treatment efforts in ovarian cancer.

  6. Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors (United States)

    Roh, Jeongkyun; Lee, Taesoo; Kang, Chan-Mo; Kwak, Jeonghun; Lang, Philippe; Horowitz, Gilles; Kim, Hyeok; Lee, Changhee


    We demonstrated modulation of charge carrier densities in all-solution-processed organic field-effect transistors (OFETs) by modifying the injection properties with self-assembled monolayers (SAMs). The all-solution-processed OFETs based on an n-type polymer with inkjet-printed Ag electrodes were fabricated as a test platform, and the injection properties were modified by the SAMs. Two types of SAMs with different dipole direction, thiophenol (TP) and pentafluorobenzene thiol (PFBT) were employed, modifying the work function of the inkjet-printed Ag (4.9 eV) to 4.66 eV and 5.24 eV with TP and PFBT treatments, respectively. The charge carrier densities were controlled by the SAM treatment in both dominant and non-dominant carrier-channel regimes. This work demonstrates that control of the charge carrier densities can be efficiently achieved by modifying the injection property with SAM treatment; thus, this approach can achieve polarity conversion of the OFETs.

  7. Self-organizing properties of triethylsilylethynyl-anthradithiophene on monolayer graphene electrodes in solution-processed transistors. (United States)

    Jang, Jaeyoung; Park, Jaesung; Nam, Sooji; Anthony, John E; Kim, Youngsoo; Kim, Keun Soo; Kim, Kwang S; Hong, Byung Hee; Park, Chan Eon


    Graphene has shown great potential as an electrode material for organic electronic devices such as organic field-effect transistors (FETs) because of its high conductivity, thinness, and good compatibility with organic semiconductor materials. To achieve high performance in graphene-based organic FETs, favorable molecular orientation and good crystallinity of organic semiconductors on graphene are desired. This strongly depends on the surface properties of graphene. Here, we investigate the effects of polymer residues that remain on graphene source/drain electrodes after the transfer/patterning processes on the self-organizing properties and field-effect characteristics of the overlying solution-processed triethylsilylethynyl-anthradithiophene (TES-ADT). A solvent-assisted polymer residue removal process was introduced to effectively remove residues or impurities on the graphene surface. Unlike vacuum-deposited small molecules, TES-ADT displayed a standing-up molecular assembly, which facilitates lateral charge transport, on both the residue-removed clean graphene and as-transferred graphene with polymer residues. However, TES-ADT films grown on the cleaned graphene showed a higher crystallinity and larger grain size than those on the as-transferred graphene. The resulting TES-ADT FETs using cleaned graphene source/drain electrodes therefore exhibited a superior device performance compared to devices using as-transferred graphene electrodes, with mobilities as high as 1.38 cm(2) V(-1) s(-1).

  8. High-Performance n-Channel Organic Transistors Using High-Molecular-Weight Electron-Deficient Copolymers and Amine-Tailed Self-Assembled Monolayers. (United States)

    Wang, Yang; Hasegawa, Tsukasa; Matsumoto, Hidetoshi; Mori, Takehiko; Michinobu, Tsuyoshi


    While high-performance p-type semiconducting polymers are widely reported, their n-type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high-quality n-type polymers with number-average molecular weight up to 10 5 g mol -1 . Furthermore, by sp 2 -nitrogen atoms (sp 2 -N) substitution, three new n-type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp 2 -N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp 2 -N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine-tailed self-assembled monolayer (SAM) is smoothly formed on a Si/SiO 2 substrate by a simple spin-coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n-type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm 2 V -1 s -1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈10 7 is demonstrated for the pSNT-based devices, which are among the highest values for unipolar n-type semiconducting polymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Monolayer Superconductivity in WS2

    NARCIS (Netherlands)

    Zheliuk, Oleksandr; Lu, Jianming; Yang, Jie; Ye, Jianting

    Superconductivity in monolayer tungsten disulfide (2H-WS2) is achieved by strong electrostatic electron doping of an electric double-layer transistor (EDLT). Single crystals of WS2 are grown by a scalable method - chemical vapor deposition (CVD) on standard Si/SiO2 substrate. The monolayers are

  10. Functionalization of Organic Semiconductors and Other Carbon-based Materials by Self-Assembled Monolayers (SAMs) and Charge Transport in Organic Field-effect Transistors (OFETs) (United States)

    Lee, Bumsu

    In the first part of the thesis, studies of the charge carrier transport in organic semiconductors performed using organic field-effect transistors (OFETs) with polymeric gate dielectric (parylene) are presented. By combining OFET and ultraviolet photoelectron spectroscopy (UPS) studies, the effect of bias-stress instability at the semiconductor/insulator interface have been investigated and understood. The effect is understood in terms of the transfer of holes from an accumulation channel of the semiconductor to localized states of the insulator that depends on energetic overlap between HOMO band tails of the semiconductor and the insulator. Second, surface functionalization of various materials such as organic single crystals, conjugated semiconductor polymers, graphene and carbon nanotubes (CNTs) with Self-Assembled Monolayers (SAMs) is described. In most cases, an enhanced surface conductivity is observed as a result of SAM treatment. Especially, fluorinated alkyl-silane (FTS) SAM induces the highest density of p-type charge carriers (in excess of an order of 1013cm-2), which leads to a strong surface hole-doping of these materials. In this thesis, (1) the mechanism of SAM nucleation, growth process and doping effect at the surface of organic single crystals and graphene is revealed. SAM nucleation occurs predominantly at molecular step edges or defect sites present at the surface and a consecutive lateral growth proceeds by cross-linking between SAM molecules. The strong hole-doping is explained by an interfacial charge transfer that during SAM formation. In addition, conductive atomic force microscopy (C-AFM) confirms that conducting paths along the step edges are formed by FTS nucleation at the early stage of FTS growth on rubrene. (2) it is reported that conductivity of solution-deposited thin film of conjugated polymers increases by up to six orders of magnitude, reaching (1.1 ± 0.1) × 103 Scm-1 for poly (2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b

  11. Luminescent Organic Semiconducting Langmuir Monolayers. (United States)

    Agina, Elena V; Mannanov, Artur A; Sizov, Alexey S; Vechter, Olga; Borshchev, Oleg V; Bakirov, Artem V; Shcherbina, Maxim A; Chvalun, Sergei N; Konstantinov, Vladislav G; Bruevich, Vladimir V; Kozlov, Oleg V; Pshenichnikov, Maxim S; Paraschuk, Dmitry Yu; Ponomarenko, Sergei A


    In recent years, monolayer organic field-effect devices such as transistors and sensors have demonstrated their high potential. In contrast, monolayer electroluminescent organic field-effect devices are still in their infancy. One of the key challenges here is to create an organic material that self-organizes in a monolayer and combines efficient charge transport with luminescence. Herein, we report a novel organosilicon derivative of oligothiophene-phenylene dimer D2-Und-PTTP-TMS (D2, tetramethyldisiloxane; Und, undecylenic spacer; P, 1,4-phenylene; T, 2,5-thiophene; TMS, trimethylsilyl) that meets these requirements. The self-assembled Langmuir monolayers of the dimer were investigated by steady-state and time-resolved photoluminescence spectroscopy, atomic force microscopy, X-ray reflectometry, and grazing-incidence X-ray diffraction, and their semiconducting properties were evaluated in organic field-effect transistors. We found that the best uniform, fully covered, highly ordered monolayers were semiconducting. Thus, the ordered two-dimensional (2D) packing of conjugated organic molecules in the semiconducting Langmuir monolayer is compatible with its high-yield luminescence, so that 2D molecular aggregation per se does not preclude highly luminescent properties. Our findings pave the way to the rational design of functional materials for monolayer organic light-emitting transistors and other optoelectronic devices.

  12. Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors. (United States)

    Ma, Hong; Acton, Orb; Hutchins, Daniel O; Cernetic, Nathan; Jen, Alex K-Y


    Insulating and semiconducting molecular phosphonic acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs) for low-power, low-cost flexible electronics. Multifunctional SAMs on ultrathin metal oxides, such as hafnium oxide and aluminum oxide, are shown to enable (1) low-voltage (sub 2 V) OFETs through dielectric and interface engineering on rigid and plastic substrates, (2) simultaneous one-component modification of source-drain and dielectric surfaces in bottom-contact OFETs, and (3) SAM-FETs based on molecular monolayer semiconductors. The combination of excellent dielectric and interfacial properties results in high-performance OFETs with low-subthreshold slopes down to 75 mV dec(-1), high I(on)/I(off) ratios of 10(5)-10(7), contact resistance down to 700 Ω cm, charge carrier mobilities of 0.1-4.6 cm(2) V(-1) s(-1), and general applicability to solution-processed and vacuum-deposited n-type and p-type organic and polymer semiconductors.

  13. Analysing organic transistors based on interface approximation

    International Nuclear Information System (INIS)

    Akiyama, Yuto; Mori, Takehiko


    Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

  14. Modeling the BZ reaction in gels with chemo-responsive crosslinks (United States)

    Yashin, Victor V.; Kuksenok, Olga; Balazs, Anna C.


    We model chemo-responsive polymer gels, which expand and contract periodically in response to the ongoing oscillatory Belousov-Zhabotinsky (BZ) reaction. This behavior is due to a ruthenium catalyst, which is grafted to the polymers and affects the polymer-solvent interactions as it undergoes the redox oscillations in the course of the reaction. We consider a permanently crosslinked polymer gel that encompasses Ru(terpy)2 catalytic units having both the terpyridine ligands chemically bonded to the network. It is known that oxidation of the Ru metal-ion from Ru(II) to Ru(III) results in the dissociation of the Ru(terpy)2 complexes since the Ru(III) ions form only mono-complexes with terpyridine. Hence, the grafted Ru(terpy)2 units would effectively create crosslinks that break and re-form in the response to the BZ reaction. We modified the Oregonator model for the BZ reaction and took into account that the re-formation of Ru(terpy)2 complexes is frustrated by the gel network. The time-dependent elastic contribution of the Ru(terpy)2 crosslinks was described by the BKZ-type constitutive equation. We report on the results of simulations in 1D. We show, in particular, that compression of the sample leads to stiffening of the gel due to an increase in the crosslink density.

  15. Unijunction transistors

    International Nuclear Information System (INIS)


    The electrical characteristics of unijunction transistors can be modified by irradiation with electron beams in excess of 400 KeV and at a dose rate of 10 13 to 10 16 e/cm 2 . Examples are given of the effect of exposing the emitter-base junctions of transistors to such lattice defect causing radiation for a time sufficient to change the valley current of the transistor. (U.K.)

  16. Superconducting transistor

    International Nuclear Information System (INIS)

    Gray, K.E.


    A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

  17. Role of Topoisomerases in Pediatric High Grade Osteosarcomas: TOP2A Gene Is One of the Unique Molecular Biomarkers of Chemoresponse

    Directory of Open Access Journals (Sweden)

    Natacha Entz-Werle


    Full Text Available Currently, the treatment of pediatric high-grade osteosarcomas systematically includes one topoisomerase IIα inhibitor. This chemotherapy is usually adapted to the response to the neo-adjuvant therapy after surgery. The current and unique marker of chemoresponsiveness is the percentage of viable residual cells in the surgical resection. This late patient management marker has to be evaluated earlier in the therapeutic history of the patients on initial biopsy. Therefore, new biomarkers, especially those involved in the topoisomerase IIα inhibitor response might be good candidates. Therefore, our study was designed to target TOP1, TOP2A and TOP2B genes in 105 fresh-frozen diagnostic biopsies by allelotyping and real-time quantitative PCR. Our analyses in those pediatric osteosarcomas, homogeneously treated, highlighted the frequent involvement of topo-isomerase genes. The main and most important observation was the statistical link between the presence of TOP2A amplification and the good response to neo-adjuvant chemotherapy. Compared to adult cancers, the 17q21 amplicon, including TOP2A and ERBB2 genes, seems to be differentially implicated in the osteosarcoma chemoresponsiveness. Surprisingly, there is no ERBB2 gene co-amplification and the patients harboring TOP2A amplification tend to show a worse survival, so TOP2A analyses remain a preliminary, but a good molecular approach for the evaluation at diagnosis of pediatric osteosarcoma chemoresponsiveness.

  18. Perforated monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Regen, S.L.


    Goal of this research program is to create ultrathin organic membranes that possess uniform and adjustable pores ( < 7[angstrom] diameter). Such membranes are expected to possess high permeation selectivity (permselectivity) and high permeability, and to provide the basis for energy-efficient methods of molecular separation. Work carried out has demonstrated feasibility of using perforated monolayer''-based composites as molecular sieve membranes. Specifically, composite membranes derived from Langmuir-Blodgett multilayers of the calix[6]arene-based surfactant shown below plus poly[l-(trimethylsilyl)-l-propyne] (PTMSP) were found to exhibit sieving behavior towards He, N[sub 2] and SF[sub 6]. Results of derivative studies that have also been completed are also described in this report.

  19. Monolayer atomic crystal molecular superlattices (United States)

    Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng


    Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

  20. Magnetic bipolar transistor


    Fabian, Jaroslav; Zutic, Igor; Sarma, S. Das


    A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

  1. Test Equipment Specifications Transistor


    Didiek Andiana Ramadan; Drs. Linga Hermanto, MMSI Drs. Linga Hermanto, MMSI


    In this paper, we design a test apparatus Transistor Specification. Specification is atype of transistor is a transistor and common emitter current reinforcement value ( βDC ). The system will provide information in the form of an LED display emits greenlight when the tested types of NPN transistor and the second LED emits blue lightwhen the tested types of PNP transistors.To test the value of β, whose value is proportional to the display used by the collectorcurrent Ic.

  2. Modeling chemoresponsive polymer gels. (United States)

    Kuksenok, Olga; Deb, Debabrata; Dayal, Pratyush; Balazs, Anna C


    Stimuli-responsive gels are vital components in the next generation of smart devices, which can sense and dynamically respond to changes in the local environment and thereby exhibit more autonomous functionality. We describe recently developed computational methods for simulating the properties of such stimuli-responsive gels in the presence of optical, chemical, and thermal gradients. Using these models, we determine how to harness light to drive shape changes and directed motion in spirobenzopyran-containing gels. Focusing on oscillating gels undergoing the Belousov-Zhabotinksy reaction, we demonstrate that these materials can spontaneously form self-rotating assemblies, or pinwheels. Finally, we model temperature-sensitive gels that encompass chemically reactive filaments to optimize the performance of this system as a homeostatic device for regulating temperature. These studies could facilitate the development of soft robots that autonomously interconvert chemical and mechanical energy and thus perform vital functions without the continuous need of external power sources.

  3. Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors

    DEFF Research Database (Denmark)

    Sandberg, H.G.O.; Frey, G.L.; Shkunov, M.N.


    Ultrathin films of regioregular poly(3-hexyl thiophene) (RR-P3HT) were deposited through a dip-coating technique and utilized as the semiconducting film in field-effect transistors (FETs). Proper selection of the substrate and solution concentration enabled the growth of a monolayer-thick RR-P3HT...... film. Atomic force microscopy (AFM), U-V-vis absorption spectroscopy, X-ray reflectivity, and grazing incidence diffraction were used to study the growth mechanism, thickness and orientation of self-organized monolayer thick RR-P3HT films on SiO2 surfaces. Films were found to adopt a Stranski...

  4. Perforated monolayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Regen. Steven L.


    This STI is a final report for a DOE-supported program, ''Perforated Monolayers,'' which focused on the fabrication of ultrathin membranes for gas separations based on Langmuir-Blodgett chemistry.

  5. Nanoscale Vacuum Channel Transistor. (United States)

    Han, Jin-Woo; Moon, Dong-Il; Meyyappan, M


    Vacuum tubes that sparked the electronics era had given way to semiconductor transistors. Despite their faster operation and better immunity to noise and radiation compared to the transistors, the vacuum device technology became extinct due to the high power consumption, integration difficulties, and short lifetime of the vacuum tubes. We combine the best of vacuum tubes and modern silicon nanofabrication technology here. The surround gate nanoscale vacuum channel transistor consists of sharp source and drain electrodes separated by sub-50 nm vacuum channel with a source to gate distance of 10 nm. This transistor performs at a low voltage (3 microamperes). The nanoscale vacuum channel transistor can be a possible alternative to semiconductor transistors beyond Moore's law.

  6. Ballistic Phosphorene Transistor (United States)


    satisfactory. W911NF-14-1-0572 -II 66414-EL-II.3 TO:(1) Electronics Division (Qiu, Joe) TITLE: Final Report: Ballistic Phosphorene Transistor (x) Material... Transistor ” as a STIP award for the period 09/1/2014 through 5/31/2015. The ARO program director responsible for the grant is Dr. Joe Qiu. The PI is Prof...UU 19-11-2015 1-Sep-2014 31-May-2015 Approved for Public Release; Distribution Unlimited Final Report: Ballistic Phosphorene Transistor The views

  7. Electromechanical field effect transistors based on multilayer phosphorene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Z.T., E-mail:; Lv, Z.T.; Zhang, X.D.


    Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on–off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on–off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields. - Highlights: • Electromechanical transistors are designed with multilayer phosphorene nanoribbons. • Electromechanical synergistic effect can establish the on–off switching more flexibly. • Multilayer transistors, solider and more easily biased, has more transport channels. • Electromechanical transistors can act as strain-controlled transistors or mechanical detectors.

  8. Using white noise to gate organic transistors for dynamic monitoring of cultured cell layers. (United States)

    Rivnay, Jonathan; Leleux, Pierre; Hama, Adel; Ramuz, Marc; Huerta, Miriam; Malliaras, George G; Owens, Roisin M


    Impedance sensing of biological systems allows for monitoring of cell and tissue properties, including cell-substrate attachment, layer confluence, and the "tightness" of an epithelial tissue. These properties are critical for electrical detection of tissue health and viability in applications such as toxicological screening. Organic transistors based on conducting polymers offer a promising route to efficiently transduce ionic currents to attain high quality impedance spectra, but collection of complete impedance spectra can be time consuming (minutes). By applying uniform white noise at the gate of an organic electrochemical transistor (OECT), and measuring the resulting current noise, we are able to dynamically monitor the impedance and thus integrity of cultured epithelial monolayers. We show that noise sourcing can be used to track rapid monolayer disruption due to compounds which interfere with dynamic polymerization events crucial for maintaining cytoskeletal integrity, and to resolve sub-second alterations to the monolayer integrity.

  9. Vertical organic transistors (United States)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl


    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

  10. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet


    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  11. Transistor-based interface circuitry (United States)

    Taubman, Matthew S [Richland, WA


    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  12. Single-layer MoS2 transistors. (United States)

    Radisavljevic, B; Radenovic, A; Brivio, J; Giacometti, V; Kis, A


    Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

  13. Large-area WSe2 electric double layer transistors on a plastic substrate

    KAUST Repository

    Funahashi, Kazuma


    Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.

  14. Polymer transistors fabricated by painting of metallic nanoparticles (United States)

    Li, S. P.; Russell, D. M.; Newsome, C. J.; Kugler, T.; Shimoda, T.


    In this letter the authors describe the fabrication of high performance polymer thin film transistors using an aqueous based silver colloid to form source and drain electrodes patterned by brush painting. The electrode dimensions were controlled by a surface energy pattern defined by soft contact printing of a self-assembled monolayer 1H,1H,2H,2H-perfluorodecyl-trichlorosilane on a SiO2 surface which acted as a dewetting layer for the painted silver particle suspension. Another self-assembled monolayer of 1H ,1H,2H,2H-perfluorodecanethiol was also used to increase the work function of the patterned silver electrodes in order to decrease the barrier for charge injection into the polymer semiconductor. The field-effect mobility of the thin film transistors fabricated by this method approached 0.02cm2V-1s-1 with an on/off current ratio of 105. The relative high mobility may be influenced by the ordering of the poly(3-hexylthiophene) semiconductor layer by the self-assembled monolayer used to define the source and drain electrodes.

  15. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M


    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  16. Transistor scaling with novel materials


    Meikei Ieong; Vijay Narayanan; Dinkar Singh; Anna Topol; Victor Chan; Zhibin Ren


    Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years.

  17. Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

    KAUST Repository

    Pu, Jiang


    The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.

  18. Quantum Thermal Transistor. (United States)

    Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose


    We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

  19. In situ characterization of the film coverage and the charge transport in the alkylated-organic thin film transistor (United States)

    Watanabe, Takeshi; Koganezawa, Tomoyuki; Kikuchi, Mamoru; Muraoka, Hiroki; Ogawa, Satoshi; Yoshimoto, Noriyuki; Hirosawa, Ichiro


    We propose an in situ experimental method of investigating the correlations of the film coverage of the organic semiconductor layers and charge transport properties of organic thin film transistors during vacuum deposition. The coverage of each monolayer was estimated using the intensity of off-specular diffuse scattering and diffraction. Experimental data were obtained from the in situ measurements of two-dimensional grazing incidence X-ray scattering and charge transport. The source-drain current increased over the film coverage of the first monolayer (= 0.48). This is in agreement with the critical percolation coverage, indicating that the conductivities of the first and second monolayers are different.

  20. Theoretical study of phosphorene tunneling field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Jiwon; Hobbs, Chris [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)


    In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe{sub 2} TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe{sub 2} TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

  1. Spin-torque transistor

    NARCIS (Netherlands)

    Bauer, G.E.W.; Brataas, A.; Tserkovnyak, Y.; Van Wees, B.J.


    A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin

  2. Bright monolayer tungsten disulfide via exciton and trion chemical modulations. (United States)

    Tao, Ye; Yu, Xuechao; Li, Jiewei; Liang, Houkun; Zhang, Ying; Huang, Wei; Wang, Qi Jie


    Atomically thin transition metal dichalcogenides (TMDCs) with exceptional electrical and optical properties have drawn tremendous attention for use in novel optoelectronic applications as photodetectors, transistors, light emitters, etc. However, electron bound trions formed through the combination of neutral excitons and electrons significantly decrease the photoluminescence (PL) efficiency of TMDCs. In this study, we report a simple yet efficient chemical doping strategy to modulate the optical properties of monolayer tungsten disulfide (WS2). As a demonstrative example, a chemically doped monolayer of WS2 exhibits remarkable PL enhancement of about one order of magnitude higher than that of pristine WS2. This outstanding PL enhancement is attributed to the fact that excess electrons, which promote the formation of electron-bound trions, are reduced in number through charge transfer from WS2 to the chemical dopant. Furthermore, an improved degree of circular polarization from ∼9.0% to ∼41.5% was also observed in the chemically doped WS2 monolayer. This work describes a feasible strategy to manipulate the optical properties of TMDCs via exciton modulation, making TMDCs promising candidates for versatile semiconductor-based photonic devices.


    Driver, G.E.


    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  4. Organic electrochemical transistors

    KAUST Repository

    Rivnay, Jonathan


    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  5. Mesoscopic photon heat transistor

    DEFF Research Database (Denmark)

    Ojanen, T.; Jauho, Antti-Pekka


    We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

  6. Junctionless Cooper pair transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, K. Yu., E-mail: [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)


    Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  7. Metatronic transistor amplifier (United States)

    Chettiar, Uday K.; Engheta, Nader


    Utilizing the notion of metamaterials, in recent years the concept of a circuit and lumped circuit elements have been extended to the optical domains, providing the paradigm of optical metatronics, i.e., metamaterial-inspired optical nanocircuitry, as a powerful tool for design and study of more complex systems at the nanoscale. In this paper we present a design for a new metatronic element, namely, a metatronic transistor that functions as an amplifier. As shown by our analytical and numerical paper here, this metatronic transistor provides gain as well as isolation between the input and output ports of such two-port device. The cascadability and fan-out aspects of this element are also explored.

  8. Organic electrochemical transistors (United States)

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Róisín M.; Berggren, Magnus; Malliaras, George G.


    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  9. Ion bipolar junction transistors. (United States)

    Tybrandt, Klas; Larsson, Karin C; Richter-Dahlfors, Agneta; Berggren, Magnus


    Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective membranes. The IBJT is the ionic analogue to the conventional semiconductor BJT and is manufactured using standard microfabrication techniques. Transistor characteristics along with a model describing the principle of operation, in which an anionic base current amplifies a cationic collector current, are presented. By employing the IBJT as a bioelectronic circuit element for delivery of the neurotransmitter acetylcholine, its efficacy in modulating neuronal cell signaling is demonstrated.

  10. Polarization induced doped transistor (United States)

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang


    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  11. Phase transitions in surfactant monolayers

    International Nuclear Information System (INIS)

    Casson, B.D.


    Two-dimensional phase transitions have been studied in surfactant monolayers at the air/water interface by sum-frequency spectroscopy and ellipsometry. In equilibrium monolayers of medium-chain alcohols C n H 2n+1 OH (n = 9-14) a transition from a two-dimensional crystalline phase to a liquid was observed at temperatures above the bulk melting point. The small population of gauche defects in the solid phase increased only slightly at the phase transition. A model of the hydrocarbon chains as freely rotating rigid rods allowed the area per molecule and chain tilt in the liquid phase to be determined. The area per molecule, chain tilt and density of the liquid phase all increased with increasing chain length, but for each chain length the density was higher than in a bulk liquid hydrocarbon. In a monolayer of decanol adsorbed at the air/water interface a transition from a two-dimensional liquid to a gas was observed. A clear discontinuity in the coefficient of ellipticity as a function of temperature showed that the transition is first-order. This result suggests that liquid-gas phase transitions in surfactant monolayers may be more widespread than once thought. A solid-liquid phase transition has also been studied in mixed monolayers of dodecanol with an anionic surfactant (sodium dodecyl sulphate) and with a homologous series of cationic surfactants (alkyltrimethylammonium bromides: C n TABs, n = 12, 14, 16). The composition and structure of the mixed monolayers was studied above and below the phase transition. At low temperatures the mixed monolayers were as densely packed as a monolayer of pure dodecanol in its solid phase. At a fixed temperature the monolayers under-went a first-order phase transition to form a phase that was less dense and more conformationally disordered. The proportion of ionic surfactant in the mixed monolayer was greatest in the high temperature phase. As the chain length of the C n TAB increased the number of conformational defects

  12. Schottky Barriers in Bilayer Phosphorene Transistors. (United States)

    Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing


    It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

  13. Organic transistors with high thermal stability for medical applications. (United States)

    Kuribara, Kazunori; Wang, He; Uchiyama, Naoya; Fukuda, Kenjiro; Yokota, Tomoyuki; Zschieschang, Ute; Jaye, Cherno; Fischer, Daniel; Klauk, Hagen; Yamamoto, Tatsuya; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Sekitani, Tsuyoshi; Loo, Yueh-Lin; Someya, Takao


    The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm(2) V(-1)s(-1) within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.

  14. Spin Hall effect transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, Joerg; Park, B.G.; Irvine, A.C.; Zarbo, Liviu; Rozkotová, E.; Němec, P.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš


    Roč. 330, č. 6012 (2010), s. 1801-1804 ISSN 0036-8075 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 31.364, year: 2010

  15. Monolithic metal oxide transistors. (United States)

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho


    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics.

  16. Organic field-effect transistors as a test-bed for molecular electronics : a combined study with large-area molecular junctions

    NARCIS (Netherlands)

    Asadi, K.; Katsouras, I.; Harkema, J.; Gholamrezaie, F.; Smits, E.C.P.; Biscarini, F.; Blom b, P.W.M.; Leeuw, D.M. de


    The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the

  17. Organic field-effect transistors as a test-bed for molecular electronics : A combined study with large-area molecular junctions

    NARCIS (Netherlands)

    Asadi, Kamal; Katsouras, Ilias; Harkema, Jan; Gholamrezaie, Fatemeh; Smits, Edsger C. F.; Biscarini, Fabio; Blom, Paul W. M.; de Leeuw, Dago M.


    The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the

  18. Copper atomic-scale transistors

    Directory of Open Access Journals (Sweden)

    Fangqing Xie


    Full Text Available We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4 in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate. The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (Ubias influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G0 (G0 = 2e2/h; with e being the electron charge, and h being Planck’s constant or 2G0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  19. Anisotropic Negative Differential Resistance in Monolayer Black Phosphorus (United States)

    Zhang, Wanting; Kang, Peng; Chen, Huahui


    The tremendous potential application in emerging two-dimensional layered materials such as black phosphorus (BP) has attracted great attention as nanoscale devices. In this paper, the effect of anisotropic negative differential resistance (NDR) in monolayer black phosphorus field-effect transistors (FETs) is reported by the first-principles computational study based on the non-equilibrium Green’s function approach combined with density functional theory. The transport properties including current-voltage (I-V) relation and transmission spectrum of monolayer BP are investigated at different gate voltages (Vg). Further studies indicate that NDR occurs at a specific gate voltage in the armchair direction rather than in the zigzag direction. The decrease of current in I-V characteristics can be understood from the generation of non-conducting states region moving towards the Fermi level resulting in a reduction of the integration within corresponding energy range in the transmission spectrum. Our results offer useful guidance for designing FETs and other potential applications in nanoelectronic devices based on BP.

  20. Programmable automated transistor test system

    International Nuclear Information System (INIS)

    Truong, L.V.; Sundberg, G.R.


    The paper describes a programmable automated transistor test system (PATTS) and its utilization to evaluate bipolar transistors and Darlingtons, and such MOSFET and special types as can be accommodated with the PATTS base-drive. An application of a pulsed power technique at low duty cycles in a non-destructive test is used to examine the dynamic switching characteristic curves of power transistors. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software. In addition a library of test data is established on disks, tapes, and hard copies for future reference

  1. Structures and shear response of lipid monolayers

    International Nuclear Information System (INIS)

    Dutta, P.; Ketterson, J.B.


    This report discusses our work during the last 3 years using x-ray diffraction and shear measurements to study lipid monolayers (membranes). The report is divided into: (1) structure: phase diagram of saturated fatty acid Langmuir monolayers, effect of head group interactions, studies of transferred monolayers (LB films); (2) mechanical properties: fiber=optic capillary wave probe and centrosymmetric trough, mechanical behavior of heneicosanoic acid monolayer phases

  2. John Bardeen and transistor physics (United States)

    Huff, Howard R.


    John Bardeen and Walter Brattain invented the point-contact semiconductor amplifier (transistor action) in polycrystalline germanium (also observed in polycrystalline silicon) on Dec. 15, 1947, for which they received a patent on Oct. 3, 1950. Bill Shockley was not a co-patent holder on Bardeen and Brattain's point-contact semiconductor amplifier patent since Julius Lilienfeld had already received a patent in 1930 for what would have been Shockley's contribution; namely, the field-effect methodology. Shockley received patents for both his minority-carrier injection concept and junction transistor theory, however, and deservedly shared the Nobel prize with Bardeen and Brattain for his seminal contributions of injection, p-n junction theory and junction transistor theory. We will review the events leading up to the invention of Bardeen and Brattain's point-contact semiconductor amplifier during the magic month of November 17-December 16, 1947 and the invention of Shockley's junction semiconductor amplifier during his magic month of December 24, 1947-January 23, 1948. It was during the course of Bardeen and Brattain's research in November, 1947 that Bardeen also patented the essence of the MOS transistor, wherein the induced minority carriers were confined to the inversion layer enroute to the collector. C. T. Sah has described this device as a sourceless MOS transistor. Indeed, John Bardeen, co-inventor of the point-contact semiconductor amplifier and inventor of the MOS transistor, may rightly be called the father of modern electronics.

  3. Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

    KAUST Repository

    Matsuki, Keiichiro


    We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.

  4. Electrical control of neutral and charged excitons in a monolayer semiconductor. (United States)

    Ross, Jason S; Wu, Sanfeng; Yu, Hongyi; Ghimire, Nirmal J; Jones, Aaron M; Aivazian, Grant; Yan, Jiaqiang; Mandrus, David G; Xiao, Di; Yao, Wang; Xu, Xiaodong


    Monolayer group-VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts), which have thus far been challenging to generate and control in the ultimate two-dimensional limit. Utilizing high-quality monolayer molybdenum diselenide, we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X(+)), neutral (X(o)) and negatively charged (X(-)) excitons in field-effect transistors via photoluminescence. The trion charging energy is large (30 meV), enhanced by strong confinement and heavy effective masses, whereas the linewidth is narrow (5 meV) at temperatures charging energies for X(+) and X(-) to be nearly identical implying the same effective mass for electrons and holes.

  5. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide (United States)

    Sangwan, Vinod K.; Lee, Hong-Sub; Bergeron, Hadallia; Balla, Itamar; Beck, Megan E.; Chen, Kan-Sheng; Hersam, Mark C.


    Memristors are two-terminal passive circuit elements that have been developed for use in non-volatile resistive random-access memory and may also be useful in neuromorphic computing. Memristors have higher endurance and faster read/write times than flash memory and can provide multi-bit data storage. However, although two-terminal memristors have demonstrated capacity for basic neural functions, synapses in the human brain outnumber neurons by more than a thousandfold, which implies that multi-terminal memristors are needed to perform complex functions such as heterosynaptic plasticity. Previous attempts to move beyond two-terminal memristors, such as the three-terminal Widrow-Hoff memristor and field-effect transistors with nanoionic gates or floating gates, did not achieve memristive switching in the transistor. Here we report the experimental realization of a multi-terminal hybrid memristor and transistor (that is, a memtransistor) using polycrystalline monolayer molybdenum disulfide (MoS2) in a scalable fabrication process. The two-dimensional MoS2 memtransistors show gate tunability in individual resistance states by four orders of magnitude, as well as large switching ratios, high cycling endurance and long-term retention of states. In addition to conventional neural learning behaviour of long-term potentiation/depression, six-terminal MoS2 memtransistors have gate-tunable heterosynaptic functionality, which is not achievable using two-terminal memristors. For example, the conductance between a pair of floating electrodes (pre- and post-synaptic neurons) is varied by a factor of about ten by applying voltage pulses to modulatory terminals. In situ scanning probe microscopy, cryogenic charge transport measurements and device modelling reveal that the bias-induced motion of MoS2 defects drives resistive switching by dynamically varying Schottky barrier heights. Overall, the seamless integration of a memristor and transistor into one multi-terminal device could

  6. Fluorinated alkyne-derived monolayers on oxide-free silicon nanowires via one-step hydrosilylation

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Minh, Quyen [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands); Nanosens, IJsselkade 7, 7201 HB Zutphen (Netherlands); Pujari, Sidharam P. [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands); Wang, Bin [The Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 3200003 (Israel); Wang, Zhanhua [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands); Haick, Hossam [The Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 3200003 (Israel); Zuilhof, Han [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands); Rijn, Cees J.M. van, E-mail: [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands)


    Highlights: • Oxide-free H-terminated silicon nanowires undergo efficient surface modification by reaction with fluorinated 1-alkynes (HC≡C−(CH{sub 2}){sub 6}C{sub 8}H{sub 17−x}F{sub x}; x = 0–17). • These surface-modified Si NWs are chemically stable under range of conditions (including acid, base). • The surface coating yields efficient electrical passivation as demonstrated by a near-zero electrochemical activity of the surface. - Abstract: Passivation of oxide-free silicon nanowires (Si NWs) by the formation of high-quality fluorinated 1-hexadecyne-derived monolayers with varying fluorine content has been investigated. Alkyl chain monolayers (C{sub 16}H{sub 30−x}F{sub x}) with a varying number of fluorine substituents (x = 0, 1, 3, 9, 17) were attached onto hydrogen-terminated silicon (Si−H) surfaces with an effective one-step hydrosilylation. This surface chemistry gives well-defined monolayers on nanowires that have a cylindrical core–shell structure, as characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and static contact angle (SCA) analysis. The monolayers were stable under acidic and basic conditions, as well as under extreme conditions (such as UV exposure), and provide excellent surface passivation, which opens up applications in the fields of field effect transistors, optoelectronics and especially for disease diagnosis.

  7. Electromechanical field effect transistors based on multilayer phosphorene nanoribbons (United States)

    Jiang, Z. T.; Lv, Z. T.; Zhang, X. D.


    Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on-off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on-off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields.

  8. Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

    Energy Technology Data Exchange (ETDEWEB)

    Pasadas, Francisco, E-mail:; Jiménez, David [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, 08193 Bellaterra (Spain)


    Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge, and capacitance. In this work, we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been included considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.

  9. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe


    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  10. Magnetic Vortex Based Transistor Operations (United States)

    Kumar, D.; Barman, S.; Barman, A.


    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

  11. Transistor challenges - A DRAM perspective

    International Nuclear Information System (INIS)

    Faul, Juergen W.; Henke, Dietmar


    Key challenges of the transistor scaling from a DRAM perspective will be reviewed. Both, array transistors as well as DRAM support devices face challenges that differ essentially from high performance logic device scaling. As a major difference, retention time and standby current requirements characterize special boundary conditions in the DRAM device design. Array device scaling is determined by a chip size driven aggressive node scaling. To continue scaling, major innovations need to be introduced into state-of-the-art planar array transistors. Alternatively, non planar device concepts will have to be evaluated. Support device design for DRAMs is driven by today's market demand for increased chip performances at little to no extra cost. Major innovations are required to continue that path. Besides this strive for performance increase, special limitations for 'on pitch' circuits at the array edge will come up due to the aggressive cell size scaling

  12. Magnetic Vortex Based Transistor Operations (United States)

    Kumar, D.; Barman, S.; Barman, A.


    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan-out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT).

  13. Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

    KAUST Repository

    Tang, Hao-Ling


    Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.

  14. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun


    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  15. The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors

    Directory of Open Access Journals (Sweden)

    Somayyeh Rahimi


    Full Text Available We report the improvement of the electrical performance of field effect transistors (FETs fabricated on monolayer chemical vapor deposited (CVD MoS2, by applying an interacting fluoropolymer capping layer (Teflon-AF. The electrical characterizations of more than 60 FETs, after applying Teflon-AF cap, show significant improvement of the device properties and reduced device to device variation. The improvement includes: 50% reduction of the average gate hysteresis, 30% reduction of the subthreshold swing and about an order of magnitude increase of the current on-off ratio. These favorable changes in device performance are attributed to the reduced exposure of MoS2 channels to the adsorbates in the ambient which can be explained by the polar nature of Teflon-AF cap. A positive shift in the threshold voltage of all the measured FETs is observed, which translates to the more desirable enhancement mode transistor characteristics.

  16. Photo-electronic current transport in back-gated graphene transistor (United States)

    Srivastava, Ashok; Chen, Xinlu; Pradhan, Aswini K.


    In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.

  17. Field-effect transistors based on self-organized molecular nanostripes

    DEFF Research Database (Denmark)

    Cavallini, M.; Stoliare, P.; Moulin, J.-F.


    Charge transport properties in organic semiconductors depend strongly on molecular order. Here we demonstrate field-effect transistors where drain current flows through a precisely defined array of nanostripes made of crystalline and highly ordered molecules. The molecular stripes are fabricated ...... by the menisci once the critical concentration is reached and self-organizes into molecularly ordered stripes 100-200 nm wide and a few monolayers high. The charge mobility measured along the stripes is 2 orders of magnitude larger than the values measured for spin-coated thin films....

  18. Antibiotic interaction with phospholipid monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Gambinossi, F.; Mecheri, B.; Caminati, G.; Nocentini, M.; Puggelli, M.; Gabrielli, G


    We studied the interactions of tetracycline (TC) antibiotic molecules with phospholipid monolayers with the two-fold aim of elucidating the mechanism of action and providing a first step for the realization of bio-mimetic sensors for such drugs by means of the Langmuir-Blodgett technique. We examined spreading monolayers of three phospholipids in the presence of tetracycline in the subphase by means of surface pressure-area and surface potential-area isotherms as a function of bulk pH. We selected phospholipids with hydrophobic chains of the same length but polar head groups differing either in dimensions and protonation equilibria, i.e. dipalmitoylphosphatidylcholine (DPPC), dipalmitoylphosphatidylethanolamine (DPPE) and dipalmitoylphosphatidic acid (DPPA). The interaction of tetracycline with the three phospholipids was found to be highly dependent on the electric charge of the antibiotic and on the ionization state of the lipid. Significant interactions are established between the negatively charged form of dipalmitoylphosphatidic acid and the zwitterionic form of tetracycline. The drug was found to migrate at the interface where it is adsorbed underneath or/and among the head groups, depending on the surface pressure of the film, whereas penetration through the hydrophobic layer was excluded for all the three phospholipids.

  19. The four-gate transistor (United States)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.


    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  20. Lateral pressure profiles in lipid monolayers

    NARCIS (Netherlands)

    Baoukina, Svetlana; Marrink, Siewert J.; Tieleman, D. Peter


    We have used molecular dynamics simulations with coarse-grained and atomistic models to study the lateral pressure profiles in lipid monolayers. We first consider simple oil/air and oil/water interfaces, and then proceed to lipid monolayers at air/water and oil/water interfaces. The results are

  1. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria


    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  2. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide (United States)

    Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang; Jarillo-Herrero, Pablo


    The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-n junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here, we report ambipolar monolayer WSe2 devices in which two local gates are used to define a p-n junction within the WSe2 sheet. With these electrically tunable p-n junctions, we demonstrate both p-n and n-p diodes with ideality factors better than 2. Under optical excitation, the diodes demonstrate a photodetection responsivity of 210 mA W-1 and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising values for a nearly transparent monolayer material in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a building block for ultrathin, flexible and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.

  3. High-performance organic complementary inverters using monolayer graphene electrodes. (United States)

    Jeong, Yong Jin; Jang, Jaeyoung; Nam, Sooji; Kim, Kyunghun; Kim, Lae Ho; Park, Seonuk; An, Tae Kyu; Park, Chan Eon


    Chemical vapor deposition-grown graphene has been an attractive electrode material for organic electronic devices, such as organic field-effect transistors (OFETs), because it is highly conductive and provides good oxidation and thermal stability properties. However, it still remains a challenge to demonstrate organic complementary circuits using graphene electrodes because of the relatively poor performance of n-type OFETs. Here, we report the development of high-performance organic complementary inverters using graphene as source/drain electrodes and N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) and pentacene as n- and p-type organic semiconductors, respectively. Graphene electrodes were n-doped via the formation of NH2-terminated self-assembled monolayers that lowered the work function and the electron injection barrier between the graphene and PTCDI-C13. Thermal annealing improved the molecular packing among PTCDI-C13 groups on the graphene surface, thereby increasing the crystallinity and grain size. The thermally annealed PTCDI-C13 OFETs prepared using n-doped graphene electrodes exhibited a good field-effect mobility of up to 0.43 cm2/(V s), which was comparable to the values obtained from other p-type pentacene OFETs. By integrating p- and n-type OFETs, we successfully fabricated organic complementary inverters that exhibited highly symmetric operation with an excellent voltage gain of up to 124 and good noise margin.

  4. Self-assembled monolayers in organic electronics

    NARCIS (Netherlands)

    Gholamrezaie, Fatemeh


    In de afgelopen jaren hebben organische (plastic) halfgeleiders steeds meer aandacht gekregen vanwege mogelijk gebruik in elektronische toepassingen zoals zonnecellen, LED’s en veldeffect transistors. Ze kunnen goedkoop op grote schaal gefabriceerd worden en hebben goede mechanische eigenschappen.

  5. Power transistor module for high current applications

    International Nuclear Information System (INIS)

    Cilyo, F.F.


    One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

  6. Single-transistor-clocked flip-flop

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Peiyi; Darwish, Tarek; Bayoumi, Magdy


    The invention provides a low power, high performance flip-flop. The flip-flop uses only one clocked transistor. The single clocked transistor is shared by the first and second branches of the device. A pulse generator produces a clock pulse to trigger the flip-flop. In one preferred embodiment the device can be made as a static explicit pulsed flip-flop which employs only two clocked transistors.

  7. Field Effect Transistor in Nanoscale (United States)


    significant alteration in transport behaviour of these molecular junctions. 15. SUBJECT TERMS Theory , Nanoscale, Field Effect Transistor (FET), Devices...Density Functional Theory (DFT), Non-equilibrium Green Function 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER OF PAGES     13...Keep in mind the amount of funding you received relative to the amount of effort you put into the report. References: 1. J. R. Heath and M

  8. High current transistor pulse generator (United States)

    Nesterov, V.; Cassel, R.


    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability.

  9. High current transistor pulse generator

    International Nuclear Information System (INIS)

    Nesterov, V.; Cassel, R.


    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

  10. Analysis of charge injection and contact resistance as a function of electrode surface treatment in ambipolar polymer transistors (United States)

    Lee, Seon Jeng; Kim, Chaewon; Jung, Seok-Heon; Di Pietro, Riccardo; Lee, Jin-Kyun; Kim, Jiyoung; Kim, Miso; Lee, Mi Jung


    Ambipolar organic field-effect transistors (OFETs) have both of hole and electron enhancements in charge transport. The characteristics of conjugated diketopyrrolopyrrole ambipolar OFETs depend on the metal-contact surface treatment for charge injection. To investigate the charge-injection characteristics of ambipolar transistors, these devices are processed via various types of self-assembled monolayer treatments and annealing. We conclude that treatment by the self-assembled monolayer 1-decanethiol gives the best enhancement of electron charge injection at both 100 and 300 °C annealing temperature. In addition, the contact resistance is calculated by using two methods: One is the gated four-point probe (gFPP) method that gives the voltage drop between channels, and the other is the simultaneous contact resistance extraction method, which extracts the contact resistance from the general transfer curve. We confirm that the gFPP method and the simultaneous extraction method give similar contact resistance, which means that we can extract contact resistance from the general transfer curve without any special contact pattern. Based on these characteristics of ambipolar p- and n-type transistors, we fabricate inverter devices with only one active layer. [Figure not available: see fulltext.

  11. Large Friction Anisotropy of a Polydiacetylene Monolayer

    International Nuclear Information System (INIS)

    Burns, A.R.; Carpick, R.W.; Sasaki, D.Y.


    Friction force microscopy measurements of a polydiacetylene monolayer film reveal a 300% friction anisotropy that is correlated with the film structure. The film consists of a monolayer of the red form of N-(2-ethanol)- 10,12 pentacosadiynamide, prepared on a Langmuir trough and deposited on a mica substrate. As confirmed by atomic force microscopy and fluorescence microscopy, the monolayer consists of domains of linearly oriented conjugated backbones with pendant hydrocarbon side chains above and below the backbones. Maximum friction occurs when the sliding direction is perpendicular to the backbone. We propose that the backbones impose anisotropic packing of the hydrocarbon side chains which leads to the observed friction anisotropy. Friction anisotropy is therefore a sensitive, optically-independent indicator of polymer backbone direction and monolayer structural properties

  12. Molecular diffusion in monolayer and submonolayer nitrogen

    DEFF Research Database (Denmark)

    Hansen, Flemming Yssing; Bruch, Ludwig Walter


    The orientational and translational motions in a monolayer fluid of physisorbed molecular nitrogen are treated using molecular dynamics simulations. Dynamical response functions and several approximations to the coefficient of translational diffusion are determined for adsorption on the basal plane...

  13. Packing of ganglioside-phospholipid monolayers

    DEFF Research Database (Denmark)

    Majewski, J.; Kuhl, T.L.; Kjær, K.


    Using synchrotron grazing-incidence x-ray diffraction (GIXD) and reflectivity, the in-plane and out-of-plane structure of mixed ganglioside-phospholipid monolayers was investigated at the air-water interface. Mixed monolayers of 0, 5, 10, 20, and 100 mol% ganglioside GM, and the phospholipid...... dipaimitoylphosphatidylethanolamine (DPPE) were studied in the solid phase at 23 degreesC and a surface pressure of 45 mN/m. At these concentrations and conditions the two components do not phase-separate and no evidence for domain formation was observed. X-ray scattering measurements reveal that GM, is accommodated within the host...... monolayers did not affect hydrocarbon tail packing (fluidization or condensation of the hydrocarbon region). This is in contrast to previous investigations of lipopolymer-lipid mixtures, where the packing structure of phospholipid monolayers was greatly altered by the inclusion of lipids bearing hydrophilic...

  14. Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

    KAUST Repository

    Lin, Chih-Pin


    We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

  15. Exciton Binding Energy of Monolayer WS2 (United States)

    Zhu, Bairen; Chen, Xi; Cui, Xiaodong


    The optical properties of monolayer transition metal dichalcogenides (TMDC) feature prominent excitonic natures. Here we report an experimental approach to measuring the exciton binding energy of monolayer WS2 with linear differential transmission spectroscopy and two-photon photoluminescence excitation spectroscopy (TP-PLE). TP-PLE measurements show the exciton binding energy of 0.71 +/- 0.01 eV around K valley in the Brillouin zone.

  16. STM studies of synthetic peptide monolayers (United States)

    Bergeron, David J.; Clauss, Wilfried; Pilloud, Denis L.; Leslie Dutton, P.; Johnson, Alan T.


    We have used scanning probe microscopy to investigate self-assembled monolayers of chemically synthesized peptides. We find that the peptides form a dense uniform monolayer, above which is found a sparse additional layer. Using scanning tunneling microscopy, submolecular resolution can be obtained, revealing the alpha helices which constitute the peptide. The nature of the images is not significantly affected by the incorporation of redox cofactors (hemes) in the peptides.

  17. Mass spectrometric analysis of monolayer protected nanoparticles (United States)

    Zhu, Zhengjiang

    Monolayer protected nanoparticles (NPs) include an inorganic core and a monolayer of organic ligands. The wide variety of core materials and the tunable surface monolayers make NPs promising materials for numerous applications. Concerns related to unforeseen human health and environmental impacts of NPs have also been raised. In this thesis, new analytical methods based on mass spectrometry are developed to understand the fate, transport, and biodistributions of NPs in the complex biological systems. A laser desorption/ionization mass spectrometry (LDI-MS) method has been developed to characterize the monolayers on NP surface. LDI-MS allows multiple NPs taken up by cells to be measured and quantified in a multiplexed fashion. The correlations between surface properties of NPs and cellular uptake have also been explored. LDI-MS is further coupled with inductively coupled plasma mass spectrometry (ICP-MS) to quantitatively measure monolayer stability of gold NPs (AuNPs) and quantum dots (QDs), respectively, in live cells. This label-free approach allows correlating monolayer structure and particle size with NP stability in various cellular environments. Finally, uptake, distribution, accumulation, and excretion of NPs in higher order organisms, such as fish and plants, have been investigated to understand the environmental impact of nanomaterials. The results indicate that surface chemistry is a primary determinant. NPs with hydrophilic surfaces are substantially less toxic and present a lower degree of bioaccumulation, making these nanomaterials attractive for sustainable nanotechnology.

  18. Nanowire Field-Effect Transistors : Sensing Simplicity?

    NARCIS (Netherlands)

    Mescher, M.


    Silicon nanowires are structures made from silicon with at least one spatial dimension in the nanometer regime (1-100 nm). From these nanowires, silicon nanowire field-effect transistors can be constructed. Since their introduction in 2001 silicon nanowire field-effect transistors have been studied

  19. Ultrasmall transistor-based light sources

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

    Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

  20. Operation and modeling of the MOS transistor

    CERN Document Server

    Tsividis, Yannis


    Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor - the key element of modern microelectronic chips.

  1. Ferroelectric transistor memory arrays on flexible foils

    NARCIS (Netherlands)

    Breemen, A. van; Kam, B.; Cobb, B.; Rodriguez, F.G.; Heck, G. van; Myny, K.; Marrani, A.; Vinciguerra, V.; Gelinck, G.H.


    In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to

  2. The spinvalve transistor: technologies and progress

    NARCIS (Netherlands)

    Lodder, J.C.; Monsma, D.J.; Vlutters, R.; Shimatsu, T.; Shimatsu, T.


    The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The

  3. Floating-Emitter Solar-Cell Transistor (United States)

    Sah, C. T.; Cheng, L. J.


    Conceptual transistor embedded in photovoltaic diode promises to increase efficiency to more than 20 percent. Solar-cell transistor has front-surface contact, rear contact, and floating emitter. Variety of other contact and junction configurations possible, but do not offer ease of fabrication in combination with high performance.

  4. Universal power transistor base drive control unit (United States)

    Gale, Allan R.; Gritter, David J.


    A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

  5. Magnetoamplification in a bipolar magnetic junction transistor. (United States)

    Rangaraju, N; Peters, J A; Wessels, B W


    We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized.

  6. Nanofluidic diode and bipolar transistor. (United States)

    Daiguji, Hirofumi; Oka, Yukiko; Shirono, Katsuhiro


    Theoretical modeling of ionic distribution and transport in a nanochannel containing a surface charge on its wall, 30 nm high and 5 microm long, suggests that ionic current can be controlled by locally modifying the surface charge density through a gate electrode, even if the electrical double layers are not overlapped. When the surface charge densities at the right and left halves of a channel are the same absolute value but of different signs, this could form the basis of a nanofluidic diode. When the surface charge density at the middle part of a channel is modified, this could form the basis of a nanofluidic bipolar transistor.

  7. Gate Tunable Transport in Graphene/MoS2/(Cr/Au Vertical Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Ghazanfar Nazir


    Full Text Available Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS2/(Cr/Au vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr, the electrical transport in our Gr/MoS2/(Cr/Au vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS2 can be modified by back-gate voltage and the current bias. Vertical resistance (Rvert of a Gr/MoS2/(Cr/Au transistor is compared with planar resistance (Rplanar of a conventional lateral MoS2 field-effect transistor. We have also studied electrical properties for various thicknesses of MoS2 channels in both vertical and lateral transistors. As the thickness of MoS2 increases, Rvert increases, but Rplanar decreases. The increase of Rvert in the thicker MoS2 film is attributed to the interlayer resistance in the vertical direction. However, Rplanar shows a lower value for a thicker MoS2 film because of an excess of charge carriers available in upper layers connected directly to source/drain contacts that limits the conduction through layers closed to source/drain electrodes. Hence, interlayer resistance associated with these layers contributes to planer resistance in contrast to vertical devices in which all layers contribute interlayer resistance.

  8. Directly drawn poly(3-hexylthiophene) field-effect transistors by electrohydrodynamic jet printing: improving performance with surface modification. (United States)

    Jeong, Yong Jin; Lee, Hyungdong; Lee, Byoung-Sun; Park, Seonuk; Yudistira, Hadi Teguh; Choong, Chwee-Lin; Park, Jong-Jin; Park, Chan Eon; Byun, Doyoung


    In this study, direct micropatterning lines of poly(3-hexylthiophene) (P3HT) without any polymer binder were prepared by electrohydrodynamic jet printing to form organic field-effect transistors (OFETs). We controlled the dielectric surface by introducing self-assembled monolayers and polymer thin films to investigate the effect of surface modifications on the characteristics of printed P3HT lines and electrical performances of the OFETs. The morphology of the printed P3HT lines depended on the surface energy and type of substrate. The resulting OFETs exhibited high performance on octadecyltrichlorosilane-modified substrates, which was comparable to that of other printed P3HT OFETs. In order to realize the commercialization of the OFETs, we also fabricated a large-area transistor array, including 100 OFETs and low-operating-voltage flexible OFETs.

  9. Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation (United States)

    Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piaszenski, Guido; Petkov, Nikolay; Hydes, Alan; O'Connell, Dan; Lyons, Colin; Kennedy, Noel; Sheehan, Brendan; Schmidt, Michael; Crupi, Felice; Holmes, Justin D.; Hurley, Paul K.; Connolly, James; Hatem, Chris; Long, Brenda


    The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface.

  10. BN / Graphene / BN RF Transistors (United States)

    Wang, Han; Taychatanapat, Thiti; Hsu, Allen; Jarillo-Herrero, Pablo; Palacios, Tomas


    In this work we demonstrate the first BN/graphene/BN transistor for high frequency RF applications. This sandwich structure allows a significant improvement in the mobility of graphene, which reaches more than 18,000 cm2 /Vs at room temperature. Graphene field effect transistors (GFETs) have been fabricated with LDS = 800 nm and LG = 300 nm. The minimum conduction point of these devices is very close to zero, a result of the negligible substrate doping to the graphene. A current density in excess of 1 A/mm and DC transconductance above 200 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure and initial results show a current-gain cut-off frequency fT = 10 GHz. These experimental results have been combined with simulations of the small-signal model to study the scaling potential of these GFETs for high frequency applications. The impact of the access resistances (Rs , Rd) , the capacitances (Cgs , Cgd , Cds) , and the transconductance (g m) on the frequency performance of the GFETs has also been studied. Finally, the fabricated devices have been compared to GFETs fabricated with Si O2 substrate and Al 2 O3 gate dielectrics. The improved performance obtained by the BN/graphene/BN structure is very promising to enable the next generation of high frequency RF electronics.

  11. Voltage regulator for battery power source. [using a bipolar transistor (United States)

    Black, J. M. (Inventor)


    A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage. A field effect transistor between the base of the bipolar transistor and a junction between the zener diode and resistor regulates base current of the bipolar transistor, thereby regulating the conductivity of the bipolar transistor for control of the output voltage.

  12. Dark excitations in monolayer transition metal dichalcogenides

    DEFF Research Database (Denmark)

    Deilmann, Thorsten; Thygesen, Kristian Sommer


    Monolayers of transition metal dichalcogenides (TMDCs) possess unique optoelectronic properties, including strongly bound excitons and trions. To date, most studies have focused on optically active excitations, but recent experiments have highlighted the existence of dark states, which are equally...... important in many respects. Here, we use ab initio many-body calculations to unravel the nature of the dark excitations in monolayer MoSe2, MoS2, WSe2, andWS(2). Our results show that all these monolayer TMDCs host dark states as their lowest neutral and charged excitations. We further show that dark...... excitons possess larger binding energies than their bright counterparts while the opposite holds for trions....

  13. Tailoring Functional Interlayers in Organic Field-Effect Transistor Biosensors. (United States)

    Magliulo, Maria; Manoli, Kyriaki; Macchia, Eleonora; Palazzo, Gerardo; Torsi, Luisa


    This review aims to provide an update on the development involving dielectric/organic semiconductor (OSC) interfaces for the realization of biofunctional organic field-effect transistors (OFETs). Specific focus is given on biointerfaces and recent technological approaches where biological materials serve as interlayers in back-gated OFETs for biosensing applications. Initially, to better understand the effects produced by the presence of biomolecules deposited at the dielectric/OSC interfacial region, the tuning of the dielectric surface properties by means of self-assembled monolayers is discussed. Afterward, emphasis is given to the modification of solid-state dielectric surfaces, in particular inorganic dielectrics, with biological molecules such as peptides and proteins. Special attention is paid on how the presence of an interlayer of biomolecules and bioreceptors underneath the OSC impacts on the charge transport and sensing performance of the device. Moreover, naturally occurring materials, such as carbohydrates and DNA, used directly as bulk gating materials in OFETs are reviewed. The role of metal contact/OSC interface in the overall performance of OFET-based sensors is also discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Basic matrix algebra and transistor circuits

    CERN Document Server

    Zelinger, G


    Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

  15. Scaling Beyond Moore: Single Electron Transistor and Single Atom Transistor Integration on CMOS


    Deshpande , Veeresh


    Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with 'nanowire channel'is being considered as one feasible enabler of MOSFET scaling to end-of-roadmap. Alongside classical CMOS or Moore's law scaling, many novel device proposals exploiting nanoscale phenomena have been made. Single Electron Transistor (SET), with its unique 'Coulomb Blockade' phenomena, and Single Atom Transistor (SAT), as an ultimately scaled transistor, a...

  16. Monolayer-by-monolayer growth of platinum films on complex carbon fiber paper structure

    Energy Technology Data Exchange (ETDEWEB)

    Pang, Liuqing; Zhang, Yunxia [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Liu, Shengzhong, E-mail: [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)


    Graphical abstract: A controlled monolayer-by-monolayer deposition process has been developed to fabricate Pt coating on carbon fiber paper with complex network structures using a dual buffer strategy. This development may pave a way to fabricate superior Pt catalysts with the minimal Pt usage. In fact, the present Pt group metal loading is 25 times lower than the U.S. DOE 2017 target value. - Highlights: • Developed a controlled monolayer-by-monolayer Pt deposition using a dual buffer strategy. • The present Pt group metal loading is 25 times lower than the U.S. DOE 2017 target value. • This development may pave a way to fabricate superior Pt catalysts with the minimal Pt usage. - Abstract: A controlled monolayer-by-monolayer deposition process has been developed to fabricate Pt coating on carbon fiber paper with complex network structures using a dual buffer (Au/Ni) strategy. The X-ray diffraction, electrochemical quartz crystal microbalance, current density analyses, and X-ray photoelectron spectroscopy results conclude that the monolayer deposition process accomplishes full coverage on the substrate and that the thickness of the deposition layer can be controlled on a single atom scale. This development may pave a way to fabricate superior Pt catalysts with the minimal Pt usage. In fact, the present Pt group metal loading is 25 times lower than the U.S. DOE 2017 target value.

  17. Correlating the optical properties of WS2 monolayers grown by CVD with isoelectronic Mo doping level(Conference Presentation) (United States)

    Wang, Kai; Cross, Nick; Boulesbaa, Abdelaziz; Pudasaini, Pushpa R.; Tian, Mengkun; Mahjouri-Samani, Masoud; Oxley, Mark P.; Rouleau, Christopher M.; Puretzky, Alexander A.; Rack, Philip D.; Xiao, Kai; Yoon, Mina; Eres, Gyula; Duscher, Gerd; Geohegan, David B.


    Incorporating dopants in monolayer transition metal dichalcogenides (TMD) can enable manipulations of their electrical and optical properties. Previous attempts in amphoteric doping in monolayer TMDs have proven to be challenging. Here we report the incorporation of molybdenum (Mo) atoms in monolayer WS2 during growth by chemical vapor deposition, and correlate the distribution of Mo atoms with the optical properties including photoluminescence and ultrafast transient absorption dynamics. Dark field scanning transmission electron microscopy imaging quantified the isoelectronic doping of Mo in WS2 and revealed its gradual distribution along a triangular WS2 monolayer crystal, increasing from 0% at the edge to 2% in the center of the triangular WS2 triangular crystals. This agrees well with the Raman spectra data that showed two obvious modes between 360 cm-1 and 400 cm-1 that corresponded to MoS2 in the center. This in-plane gradual distribution of Mo in WS2 was found to account for the spatial variations in photoluminescence intensity and emission energy. Transition absorption spectroscopy further indicated that the incorporation of Mo in WS2 regulate the amplitude ratio of XA and XB of WS2. The effect of Mo incorporation on the electronic structure of WS2 was further elucidated by density functional theory. Finally, we compared the electrical properties of Mo incorporated and pristine WS2 monolayers by fabricating field-effect transistors. The isoelectronic doping of Mo in WS2 provides an alternative approach to engineer the bandgap and also enriches our understanding the influence of the doping on the excitonic dynamics.

  18. Sub-THz Characterisation of Monolayer Graphene

    Directory of Open Access Journals (Sweden)

    Ehsan Dadrasnia


    Full Text Available We explore the optical and electrical characteristics of monolayer graphene by using pulsed optoelectronic terahertz time-domain spectroscopy in the frequency range of 325–500 GHz based on fast direct measurements of phase and amplitude. We also show that these parameters can, however, be measured with higher resolution using a free space continuous wave measurement technique associated with a vector network analyzer that offers a good dynamic range. All the scattering parameters (both magnitude and phase are measured simultaneously. The Nicholson-Ross-Weir method is implemented to extract the monolayer graphene parameters at the aforementioned frequency range.

  19. Nonlinear optical studies of organic monolayers

    International Nuclear Information System (INIS)

    Shen, Y.R.


    Second-order nonlinear optical effects are forbidden in a medium with inversion symmetry, but are necessarily allowed at a surface where the inversion summary is broken. They are often sufficiently strong so that a submonolayer perturbation of the surface can be readily detected. They can therefore be used as effective tools to study monolayers adsorbed at various interfaces. We discuss here a number of recent experiments in which optical second harmonic generation (SHG) and sum-frequency generation (SFG) are employed to probe and characterize organic monolayers. 15 refs., 5 figs

  20. Hole mobility enhancement and p -doping in monolayer WSe2 by gold decoration (United States)

    Chen, Chang-Hsiao; Wu, Chun-Lan; Pu, Jiang; Chiu, Ming-Hui; Kumar, Pushpendra; Takenobu, Taishi; Li, Lain-Jong


    Tungsten diselenide (WSe2) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe2 monolayer, where a more p-typed WSe2 field effect transistor is realized by electron transfer from the WSe2 to the gold (Au) decorated on the WSe2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ˜100 (cm2/Vs) and the near ideal subthreshold swing of ˜60 mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe2 also serves as a protection layer to prevent a reaction between the WSe2 and the environment, making the doping stable and promising for future scalable fabrication.

  1. Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration

    KAUST Repository

    Chen, Chang-Hsiao


    Tungsten diselenide (WSe2) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe2 monolayer, where a more p-typed WSe2 field effect transistor is realized by electron transfer from the WSe2 to the gold (Au) decorated on the WSe2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ~100 (cm2/Vs) and the near ideal subthreshold swing of ~60 mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe2 also serves as a protection layer to prevent a reaction between the WSe2 and the environment, making the doping stable and promising for future scalable fabrication.

  2. Spin gated transistors for reprogrammable logic (United States)

    Ciccarelli, Chiara; Gonzalez-Zalba, Fernando; Irvine, Andrew; Campion, Richard; Zarbo, Liviu; Gallagher, Brian; Ferguson, Andrew; Jungwirth, Tomas; Wunderlich, Joerg; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; Hitachi Cambridge Laboratory Team; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; University of Cambridge Team


    In spin-orbit coupled magnetic materials the chemical potential depends on the orientation of the magnetisation. By making the gate of a field effect transistor magnetic, it is possible to tune the channel conductance not only electrically but also magnetically. We show that these magnetic transistor can be used to realise non-volatile reprogrammable Boolean logic. The non-volatile reconfigurable capability resides in the magnetization-dependent band structure of the magnetic stack. A change in magnetization orientation produces a change in the electrochemical potential, which induces a charge accumulation in the correspondent gate electrode. This is readily sensed by a field-effect device such as standard field-effect transistors or more exotic single-electron transistors. We propose circuits for low power consumption applications that can be magnetically switched between NAND and OR logic functions and between NOR and AND logic functions.

  3. Lateral power transistors in integrated circuits

    CERN Document Server

    Erlbacher, Tobias


    This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

  4. Graphene Field Effect Transistors for Radiation Detection (United States)

    National Aeronautics and Space Administration — This is propose to develop Graphene Field Effect Transistor based Radiation Sensors (GFET-RS) for NASA Manned Spaceflight Missions anticipated in next several...

  5. Breakdown of transistors in Marx bank circuit (United States)

    Chatterjee, Amitabh


    We reconsider the mode of operation of a Marx bank circuit and analyze the secondary breakdown of transistors with shorted emitter-base. The mechanism of breakdown of the transistor when a fast rising voltage pulse is applied across is investigated. The device exhibits chaotic behavior at the breakdown point where it can go into two possible modes of breakdown. A new explanation for the working of the circuit consistent with the experimental observations is proposed.

  6. Bipolar transistor in VESTIC technology: prototype (United States)

    Mierzwiński, Piotr; Kuźmicz, Wiesław; Domański, Krzysztof; Tomaszewski, Daniel; Głuszko, Grzegorz


    VESTIC technology is an alternative for traditional CMOS technology. This paper presents first measurement data of prototypes of VES-BJT: bipolar transistors in VESTIC technology. The VES-BJT is a bipolar transistor on the SOI substrate with symmetric lateral structure and both emitter and collector made of polysilicon. The results indicate that VES-BJT can be a device with useful characteristics. Therefore, VESTIC technology has the potential to become a new BiCMOS-type technology with some unique properties.

  7. Interaction of plasma apolipoproteins with lipid monolayers

    NARCIS (Netherlands)

    Jackson, R.L.; Pattus, F.; Demel, R.A.


    The monolayer technique has been used to study the interaction of lipids with plasma apolipoproteins. Apolipoprotein C-II and C-III from human very low density lipoproteins, apolipoprotein A-I from human high density lipoproteins and arginine-rich protein from swine very low density lipoproteins

  8. Semiconductor monolayer assemblies with oriented crystal faces

    KAUST Repository

    Ma, Guijun


    Fabrication of two-dimensional monolayers of crystalline oxide and oxynitride particles was attempted on glass plate substrates. X-Ray diffraction patterns of the assemblies show only specific crystal facets, indicative of the uniform orientation of the particles on the substrate. The selectivity afforded by this immobilization technique enables the organization of randomly distributed polycrystalline powders in a controlled manner.

  9. Nanotubes based on monolayer blue phosphorus

    KAUST Repository

    Montes Muñoz, Enrique


    We demonstrate structural stability of monolayer zigzag and armchair blue phosphorus nanotubes by means of molecular dynamics simulations. The vibrational spectrum and electronic band structure are determined and analyzed as functions of the tube diameter and axial strain. The nanotubes are found to be semiconductors with a sensitive indirect band gap that allows flexible tuning.

  10. Shadow mask evaporation through monolayer modified nanostencils

    NARCIS (Netherlands)

    Kolbel, M.; Tjerkstra, R.W.; Brugger, J.P.; van Rijn, C.J.M.; Nijdam, W.; Huskens, Jurriaan; Reinhoudt, David


    Gradual clogging of the apertures of nanostencils used as miniature shadow masks in metal evaporations can be reduced by coating the stencil with self-assembled monolayers (SAM). This is quantified by the dimensions (height and volume) of gold features obtained by nanostencil evaporation as measured

  11. Compressibility study of quaternary phospholipid blend monolayers. (United States)

    Cavalcanti, Leide P; Tho, Ingunn; Konovalov, Oleg; Fossheim, Sigrid; Brandl, Martin


    The mechanical properties of liposome membranes are strongly dependent on type and ratio of lipid compounds, which can have important role in drug targeting and release processes when liposome is used as drug carrier. In this work we have used Brewster's angle microscopy to monitor the lateral compression process of lipid monolayers containing as helper lipids either distearoyl phosphatidylethanolamine (DSPE) or dioleoyl phophatidylethanolamine (DOPE) molecules on the Langmuir trough. The compressibility coefficient was determined for lipid blend monolayers containing the helper lipids above, cholesterol, distearoyl phosphatidylcholine (DSPC) and pegylated-DSPE at room temperature. Two variables, the cholesterol fraction and the ratio ρ between the helper lipid (either DSPE or DOPE) and the reference lipid DSPC, were studied by multivariate analysis to evaluate their impact on the compressibility coefficient of the monolayers. The cholesterol level was found to be the most significant variable for DSPE blends while the ratio ρ was the most significant one for DOPE blend monolayers. It was also found that these two variables can exhibit positive interaction and the same compressibility value can be obtained with different blend compositions. Copyright © 2011 Elsevier B.V. All rights reserved.

  12. Mode damping in a commensurate monolayer solid

    DEFF Research Database (Denmark)

    Bruch, Ludwig Walter; Hansen, Flemming Yssing


    The normal modes of a commensurate monolayer solid may be damped by mixing with elastic waves of the substrate. This was shown by Hall, Mills, and Black [Phys. Rev. B 32, 4932 (1985)], for perpendicular adsorbate vibrations in the presence of an isotropic elastic medium. That work is generalized...

  13. Imidazolide monolayers for versatile reactive microcontact printing

    NARCIS (Netherlands)

    Hsu, S.H.; Reinhoudt, David; Huskens, Jurriaan; Velders, Aldrik


    Imidazolide monolayers prepared from the reaction of amino SAMs with N,N-carbonyldiimidazole (CDI) are used as a versatile platform for surface patterning with amino-, carboxyl- and alcohol-containing compounds through reactive microcontact printing (µCP). To demonstrate the surface reactivity of

  14. Patterned monolayers of nitronyl nitroxide radicals

    NARCIS (Netherlands)

    Mannini, Matteo; Rovai, Donella; Sorace, Lorenzo; Perl, A.; Ravoo, B.J.; Reinhoudt, David


    We report here the results of the preliminary characterization of the monolayer obtained both by self-assembling and microcontact printing of a di-alkyl sulfide nitronyl nitroxide derivative, 11-decyl sulfanyl-undecanyl nitronyl nitroxide of which we describe the synthesis. The sulfide unit has been

  15. Fullerene monolayer formation by spray coating

    Czech Academy of Sciences Publication Activity Database

    Červenka, Jiří; Flipse, C.F.J.


    Roč. 21, č. 6 (2010), 065302/1-065302/7 ISSN 0957-4484 Institutional research plan: CEZ:AV0Z10100521 Keywords : monolayer * spray coating * fullerene * atomic force microscopy * scanning tunnelling microscopy * electronic structure * graphite * gold Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.644, year: 2010

  16. Elasticity of a quantum monolayer solid

    DEFF Research Database (Denmark)

    Bruch, Ludwig Walter


    A perturbation-theory formulation of the zero-temperature elastic constants is used to verify symmetry relations for a (monolayer) triangluar lattice. A generalization of the Cauchy relation between the two elastic constants of the triangular lattice with central-pair-potential interactions...

  17. Temas de Física para Ingeniería: El transistor de unión


    Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito


    El transistor de unión bipolar. Tensiones y corrientes en el transistor. El transistor como amplificador. El transistor como conmutador. Transistores unipolares o de efecto de campo. El tiristor. Microelectrónica y circuitos integrados.

  18. Unjuk Kerja Catu Daya 12 Volt 2a Dengan Pass Element Transistor Npn Dan Pnp


    Fathoni, Fathoni


    Transistor pelewat (pass element transistor) yang dipasang pada rangkain catu daya yang menggunakan IC regulator 3 terminal adalah untuk booster arus output. Ada dua cara pemasangan transistor pelewat yang umum digunakan, yaitu dengan transistor pnp dan npn. Transistor pnp dipasang dengan basis transistor yang terhubung pada input IC regulator sedangkan transistor npn dipasang dengan basis transistor yang terhubung pada output IC regulator.Untuk mengetahui unjuk kerja dari kedua ...

  19. Wafer-Scale Synthesis of Semiconducting SnO Monolayers from Interfacial Oxide Layers of Metallic Liquid Tin. (United States)

    Daeneke, Torben; Atkin, Paul; Orrell-Trigg, Rebecca; Zavabeti, Ali; Ahmed, Taimur; Walia, Sumeet; Liu, Maning; Tachibana, Yasuhiro; Javaid, Maria; Greentree, Andrew D; Russo, Salvy P; Kaner, Richard B; Kalantar-Zadeh, Kourosh


    Atomically thin semiconductors are one of the fastest growing categories in materials science due to their promise to enable high-performance electronic and optical devices. Furthermore, a host of intriguing phenomena have been reported to occur when a semiconductor is confined within two dimensions. However, the synthesis of large area atomically thin materials remains as a significant technological challenge. Here we report a method that allows harvesting monolayer of semiconducting stannous oxide nanosheets (SnO) from the interfacial oxide layer of liquid tin. The method takes advantage of van der Waals forces occurring between the interfacial oxide layer and a suitable substrate that is brought into contact with the molten metal. Due to the liquid state of the metallic precursor, the surface oxide sheet can be delaminated with ease and on a large scale. The SnO monolayer is determined to feature p-type semiconducting behavior with a bandgap of ∼4.2 eV. Field effect transistors based on monolayer SnO are demonstrated. The synthetic technique is facile, scalable and holds promise for creating atomically thin semiconductors at wafer scale.

  20. Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer

    KAUST Repository

    Lee, Kevin C. J.


    The 2-D transition metal dichalcogenide (TMD) semiconductors, has received great attention due to its excellent optical and electronic properties and potential applications in field-effect transistors, light emitting and sensing devices. Recently surface plasmon enhanced photoluminescence (PL) of the weak 2-D TMD atomic layers was developed to realize the potential optoelectronic devices. However, we noticed that the enhancement would not increase monotonically with increasing of metal plasmonic objects and the emission drop after the certain coverage. This study presents the optimized PL enhancement of a monolayer MoS2 in the presence of gold (Au) nanorods. A localized surface plasmon wave of Au nanorods that generated around the monolayer MoS2 can provide resonance wavelength overlapping with that of the MoS2 gain spectrum. These spatial and spectral overlapping between the localized surface plasmon polariton waves and that from MoS2 emission drastically enhanced the light emission from the MoS2 monolayer. We gave a simple model and physical interpretations to explain the phenomena. The plasmonic Au nanostructures approach provides a valuable avenue to enhancing the emitting efficiency of the 2-D nano-materials and their devices for the future optoelectronic devices and systems.

  1. Nature of electronic states in atomically thin MoS₂ field-effect transistors. (United States)

    Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam


    We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states in all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below ∼30 K, the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.

  2. Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Himadri; Kataria, Satender [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); Aguirre-Morales, Jorge-Daniel; Fregonese, Sebastien; Zimmer, Thomas [IMS Laboratory, Centre National de la Recherche Scientifique, University of Bordeaux, Talence (France); Passi, Vikram [University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany); Iannazzo, Mario; Alarcon, Eduard [Technical University of Catalonia, Department of Electronics Engineering, UPC, Barcelona (Spain); Lemme, Max C. [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany)


    We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Jig protects transistors from heat while tinning leads (United States)

    Pelletier, A. J.; Willis, G. A.


    In tinning transistor leads, an aluminum jig is used to dip the leads into the molten tin. The jigs mass shunts excess heat given off by the molten tin before it reaches and damages the transistor body.

  4. Azobenzene-functionalized gold nanoparticles as hybrid double-floating-gate in pentacene thin-film transistors/memories with enhanced response, retention, and memory windows. (United States)

    Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai


    Gold nanoparticles (Au-NPs) with surfaces covered with a self-assembled monolayer of azobenzene derivatives were prepared at the interface of dielectric insulator SiO2 and pentacene thin film. Transistors constructed with these composite channel materials exhibited electric bistability upon different gate biases, with the monolayer serving as a barrier layer, a work function modulator, as well as additional charge trapping sites at the Au-NPs/semiconductor interface at the same time. In comparison with simple alkanethiol monolayer-covered Au-NPs, the CH3-substituted azobenzene-functionalized Au-NPs result in a transistor memory device with about 70% more charges trapped, much faster response time as well as higher retention time. Besides, depending on the substituent on the azobenzene moieties (CH3, H, or CF3) and the tethering alkyl chain length, the speed at which the carriers are trapped (affecting switching response) and the stability of the carriers that are trapped (affecting memory retention) can be modulated to improve the device performance. The structural characterization and electronic characteristics of these devices will be detailed.

  5. Ambipolar phosphorene field effect transistor. (United States)

    Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas


    In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs.

  6. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz


    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.

  7. Ambipolar Phosphorene Field Effect Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saptarshi [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States; Demarteau, Marcel [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States; Roelofs, Andreas [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States


    Two dimensional materials provide an intriguing platform to investigate rich physical phenomena which could ultimately lead to the development of innovative nanotechnologies (1-17). Semiconducting black phosphorous (BP) with high carrier mobility (18-20), anisotropic transport (21, 22) and tunable bandgap (23, 24) is the most recent addition to this exotic class of two dimensional materials. In this article we experimentally demonstrate room temperature quasi ballistic transport of both holes and electrons in ionic liquid gated black phosphorous (BP) field effect transistors (FET) with sub-100nm channel length. The carrier mean free path (mfp) was found to be 15nm for the holes and 5nm for the electrons. By improving the carrier injection through superior electrostatic gate control (EOT=1.5nm), highly symmetric ambipolar conduction with record high hole current of ~0.78mA/µm and electron current of ~0.68mA/µm are achieved for VDD=0.2V. The extracted record low contact resistance of 220Ω-µm is similar to the state of the art Si technology. This is also the best contact resistance value achieved for any two dimensional metal-semiconductor interfaces. Finally, we provide an analytical framework to compare the experimental results with ballistic simulations which includes quantum capacitance considerations.

  8. Molecular tilt on monolayer-protected nanoparticles

    KAUST Repository

    Giomi, L.


    The structure of the tilted phase of monolayer-protected nanoparticles is investigated by means of a simple Ginzburg-Landau model. The theory contains two dimensionless parameters representing the preferential tilt angle and the ratio ε between the energy cost due to spatial variations in the tilt of the coating molecules and that of the van der Waals interactions which favors the preferential tilt. We analyze the model for both spherical and octahedral particles. On spherical particles, we find a transition from a tilted phase, at small ε, to a phase where the molecules spontaneously align along the surface normal and tilt disappears. Octahedral particles have an additional phase at small ε characterized by the presence of six topological defects. These defective configurations provide preferred sites for the chemical functionalization of monolayer-protected nanoparticles via place-exchange reactions and their consequent linking to form molecules and bulk materials. Copyright © EPLA, 2012.

  9. Epitaxial growth by monolayer restricted galvanic displacement

    Directory of Open Access Journals (Sweden)

    Vasilić Rastko


    Full Text Available The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV and scanning tunneling microscopy (STM are employed to carry out and monitor a “quasi-perfect”, two-dimensional growth of Ag on Au(111, Cu on Ag(111, and Cu on Au(111 by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

  10. Hafnium transistor design for neural interfacing. (United States)

    Parent, David W; Basham, Eric J


    A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

  11. Polyphosphonium-based ion bipolar junction transistors. (United States)

    Gabrielsson, Erik O; Tybrandt, Klas; Berggren, Magnus


    Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that can modulate currents of ions and biomolecules, i.e., ionic transistors and diodes, are needed. One successful approach for modulation of ionic currents is to use oppositely charged ion-selective membranes to form so called ion bipolar junction transistors (IBJTs). Unfortunately, overall IBJT device performance has been hindered due to the typical low mobility of ions, large geometries of the ion bipolar junction materials, and the possibility of electric field enhanced (EFE) water dissociation in the junction. Here, we introduce a novel polyphosphonium-based anion-selective material into npn-type IBJTs. The new material does not show EFE water dissociation and therefore allows for a reduction of junction length down to 2 μm, which significantly improves the switching performance of the ion transistor to 2 s. The presented improvement in speed as well the simplified design will be useful for future development of advanced iontronic circuits employing IBJTs, for example, addressable drug-delivery devices.

  12. High Accuracy Transistor Compact Model Calibrations

    Energy Technology Data Exchange (ETDEWEB)

    Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)


    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  13. Wilhelmy plate artifacts in elastic monolayers (United States)

    Witten, T. A.; Wang, Jin; Pocivavsek, L.; Lee, K. Y. C.


    A recent article [L. Pocivavsek et al., Soft Matter4, 2019 (2008)] by some of us pointed out difficulties in interpreting Wilhelmy plate measurements on elastic Langmuir monolayers that support anisotropic stress. Using a simplified geometry it showed conditions in which the Wilhelmy plate measures significantly different stress from the ambient stress. We correct a serious error in this analysis and strengthen its conclusion, showing that the Wilhelmy stress and the ambient stress can have opposite signs.

  14. Structure of cholesterol/ceramide monolayer mixtures

    DEFF Research Database (Denmark)

    Scheffer, L.; Solomonov, I.; Weygand, M.J.


    The structure of monolayers of cholesterol/ ceramide mixtures was investigated using grazing incidence x-ray diffraction, immunofluorescence, and atomic force microscopy techniques. Grazing incidence x-ray diffraction measurements showed the existence of a crystalline mixed phase of the two....... As ceramide incorporates the lipid backbone common to all sphingolipids, this arrangement may be relevant to the understanding of the molecular organization of lipid rafts....

  15. Janus monolayers of transition metal dichalcogenides

    KAUST Repository

    Lu, Ang-Yu


    Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.

  16. Diffusive spreading and mixing of fluid monolayers

    International Nuclear Information System (INIS)

    Popescu, M N; Dietrich, S; Oshanin, G


    The use of ultra-thin, i.e. monolayer, films plays an important role in the emerging field of nano-fluidics. Since the dynamics of such films is governed by the interplay between substrate-fluid and fluid-fluid interactions, the transport of matter in nanoscale devices may eventually be efficiently controlled by substrate engineering. For such films, the dynamics is expected to be captured by two-dimensional lattice-gas models with interacting particles. Using a lattice-gas model and the non-linear diffusion equation derived from the microscopic dynamics in the continuum limit, we study two problems of relevance in the context of nano-fluidics. The first one is the case in which along the spreading direction of a monolayer a mesoscopic-sized obstacle is present, with a particular focus on the relaxation of the fluid density profile upon encountering and passing the obstacle. The second one is the mixing of two monolayers of different particle species which spread side by side following the merger of two chemical lanes, here defined as domains of high affinity for fluid adsorption surrounded by domains of low affinity for fluid adsorption

  17. Exploring atomic defects in molybdenum disulphide monolayers

    KAUST Repository

    Hong, Jinhua


    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm \\'2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  18. Discrete transistor measuring and matching using a solid core oven. (United States)

    Inkinen, M; Mäkelä, K; Vuorela, T; Palovuori, K


    This paper presents transistor measurements done at a constant temperature. The aim in this research was to develop a reliable and repeatable method for measuring and searching transistor pairs with similar parameters, as in certain applications it is advantageous to use transistors from the same production batch due to the significant variability in batches from different manufacturers. Transistor manufacturing methods are well established, but due to the large variability in tolerance, not even transistors from the same manufacturing batch have identical properties. Transistors' electrical properties are also strongly temperature-dependent. Therefore, when measuring transistor properties, the temperature must be kept constant. For the measurement process, a solid-core oven providing stable temperature was implemented. In the oven, the base-to-emitter voltage (VBE) and DC-current gain (β) of 32 transistors could be measured simultaneously. The oven's temperature was controlled with a programmable thermostat, which allowed accurate constant temperature operation. The oven is formed by a large metal block with an individual chamber for each transistor to be measured. Isolation of individual transistors and the highly thermally conductive metal core structure prevent thermal coupling between transistors. The oven enables repeatable measurements, and thus measurements between different batches are comparable. In this research study, the properties of over 5000 transistors were measured and the variance of the aforementioned properties was analyzed.

  19. Bipolar-FET combinational power transistors for power conversion applications (United States)

    Chen, D. Y.; Chin, S. A.


    Four bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT).

  20. Stretchable transistors with buckled carbon nanotube films as conducting channels (United States)

    Arnold, Michael S; Xu, Feng


    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  1. The boost transistor: a field plate controlled LDMOST

    NARCIS (Netherlands)

    Ferrara, A.; Schmitz, Jurriaan; Boksteen, B.K.; Hueting, Raymond Josephus Engelbart; Steeneken, P.G.; Heringa, A.; Claes, J.; van der Wel, A.P.


    In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in

  2. High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chaure, Nandu B [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Cammidge, Andrew N; Chambrier, Isabelle; Cook, Michael J [School of Chemistry, University of East Anglia, Norwich, NR4 7TJ (United Kingdom); Cain, Markys G; Murphy, Craig E [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Pal, Chandana; Ray, Asim K, E-mail: [The Wolfson Centre for Materials Processing, Brunel University, Uxbridge, Middlesex UB8 3PH (United Kingdom)


    Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc{sub 6}) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO{sub 2}) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4x10{sup -2} cm{sup 2} V{sup -1} s{sup -1} and 10{sup 6} for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

  3. Semiconducting thin films of fluorinated and unsubstituted phthalocyanines for applications in organic field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Brinkmann, Harry; Keil, Christopher; Schlettwein, Derck [Institute of Applied Physics, Justus-Liebig-University Giessen (Germany); Tsaryova, Olga; Woehrle, Dieter [Institute of Organic and Macromolecular Chemistry, University of Bremen (Germany)


    Perfluorinated phthalocyanines (F{sub 16}Pc) show n-type characteristics as active layers in organic field transistors while organic field transistors with unsubstituted phthalocyanines (Pc) exhibit p-type characteristics. The growth of F{sub 16}Pc and Pc films has been studied in OFETs on organic (polyimide, PMMA) and inorganic insulating layers (SiO{sub 2}) with different surface modifications (HMDS treatments). We report here about the dependence of the growth mode of the films and the field effect mobility on the used substrate for the copper complexes. The development of the electrical conduction was studied in-situ during film growth and the field effect mobility was determined for various film thicknesses in different regimes of the Stranski-Krastanov growth mechanism that led to the formation of ultrathin conductive layers in the monolayer range followed by reorganization towards island growth. Optical absorbance was measured in reflection or transmission in dependence of the used substrate to investigate details of the intermolecular coupling.

  4. High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Nandu B Chaure, Andrew N Cammidge, Isabelle Chambrier, Michael J Cook, Markys G Cain, Craig E Murphy, Chandana Pal and Asim K Ray


    Full Text Available Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl copper phthalocyanine (CuPc6 were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2 as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

  5. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors. (United States)

    Wu, Di; Li, Xiao; Luan, Lan; Wu, Xiaoyu; Li, Wei; Yogeesh, Maruthi N; Ghosh, Rudresh; Chu, Zhaodong; Akinwande, Deji; Niu, Qian; Lai, Keji


    The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.

  6. Molecular thermal transistor: Dimension analysis and mechanism (United States)

    Behnia, S.; Panahinia, R.


    Recently, large challenge has been spent to realize high efficient thermal transistors. Outstanding properties of DNA make it as an excellent nano material in future technologies. In this paper, we introduced a high efficient DNA based thermal transistor. The thermal transistor operates when the system shows an increase in the thermal flux despite of decreasing temperature gradient. This is what called as negative differential thermal resistance (NDTR). Based on multifractal analysis, we could distinguish regions with NDTR state from non-NDTR state. Moreover, Based on dimension spectrum of the system, it is detected that NDTR state is accompanied by ballistic transport regime. The generalized correlation sum (analogous to specific heat) shows that an irregular decrease in the specific heat induces an increase in the mean free path (mfp) of phonons. This leads to the occurrence of NDTR.

  7. Fundamentals of nanoscaled field effect transistors

    CERN Document Server

    Chaudhry, Amit


    Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.

  8. EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor (United States)

    Demming, Anna


    Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor

  9. Transistor Small Signal Analysis under Radiation Effects

    International Nuclear Information System (INIS)

    Sharshar, K.A.A.


    A Small signal transistor parameters dedicate the operation of bipolar transistor before and after exposed to gamma radiation (1 Mrad up to 5 Mrads) and electron beam(1 MeV, 25 mA) with the same doses as a radiation sources, the electrical parameters of the device are changed. The circuit Model has been discussed.Parameters, such as internal emitter resistance (re), internal base resistance, internal collector resistance (re), emitter base photocurrent (Ippe) and base collector photocurrent (Ippe). These parameters affect on the operation of the device in its applications, which work as an effective element, such as current gain (hFE≡β)degradation it's and effective parameter in the device operation. Also the leakage currents (IcBO) and (IEBO) are most important parameters, Which increased with radiation doses. Theoretical representation of the change in the equivalent circuit for NPN and PNP bipolar transistor were discussed, the input and output parameters of the two types were discussed due to the change in small signal input resistance of the two types. The emitter resistance(re) were changed by the effect of gamma and electron beam irradiation, which makes a change in the role of matching impedances between transistor stages. Also the transistor stability factors S(Ico), S(VBE) and S(β are detected to indicate the transistor operations after exposed to radiation fields. In low doses the gain stability is modified due to recombination of induced charge generated during device fabrication. Also the load resistance values are connected to compensate the effect

  10. Lateral and Vertical Organic Transistors (United States)

    Al-Shadeedi, Akram

    An extensive study has been performed to provide a better understanding of the operation principles of doped organic field-effect transistors (OFETs), organic p-i-n diodes, Schottky diodes, and organic permeable base transistors (OPBTs). This has been accomplished by a combination of electrical and structural characterization of these devices. The discussion of doped OFETs focuses on the shift of the threshold voltage due to increased doping concentrations and the generation and transport of minority charge carriers. Doping of pentacene OFETs is achieved by co-evaporation of pentacene with the n-dopant W2(hpp)4. It is found that pentacene thin film are efficiently doped and that a conductivity in the range of 2.6 x 10-6 S cm-1 for 1 wt% to 2.5 x 10-4 S cm-1 for 16 wt% is reached. It is shown that n-doped OFET consisting of an n-doped channel and n-doped contacts are ambipolar. This behavior is surprising, as n-doping the contacts should suppress direct injection of minority charge carriers (holes). It was proposed that minority charge carrier injection and hence the ambipolar characteristic of n-doped OFETs can be explained by Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. It is shown that the electric field in this layer is indeed in the range of the breakdown field of pentacene based p-i-n Zener homodiodes. Doping the channel has a profound influence on the onset voltage of minority (hole) conduction. The onset voltage can be shifted by lightly n-doping the channel. The shift of onset voltage can be explained by two mechanisms: first, due to a larger voltage that has to be applied to the gate in order to fully deplete the n-doped layer. Second, it can be attributed to an increase in hole trapping by inactive dopants. Moreover, it has been shown that the threshold voltage of majority (electron) conduction is shifted by an increase in the doping concentration, and that the ambipolar OFETs can be turned into unipolar OFETs at

  11. Static Characteristics of the Ferroelectric Transistor Inverter (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.


    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  12. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J


    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  13. Switching Characteristics of Ferroelectric Transistor Inverters (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.


    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  14. Total Dose Effects in Conventional Bipolar Transistors (United States)

    Johnston, A. H.; Swift, G. W.; Rax, B. G.


    This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.

  15. Graphene Field Effect Transistor for Radiation Detection (United States)

    Li, Mary J. (Inventor); Chen, Zhihong (Inventor)


    The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

  16. VHDL simulation with access to transistor models (United States)

    Gibson, J.


    Hardware description languages such as VHDL have evolved to aid in the design of systems with large numbers of elements and a wide range of electronic and logical abstractions. For high performance circuits, behavioral models may not be able to efficiently include enough detail to give designers confidence in a simulation's accuracy. One option is to provide a link between the VHDL environment and a transistor level simulation environment. The coupling of the Vantage Analysis Systems VHDL simulator and the NOVA simulator provides the combination of VHDL modeling and transistor modeling.

  17. Dielectric Engineered Tunnel Field-Effect Transistor


    Ilatikhameneh, Hesameddin; Ameen, Tarek A.; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib


    The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface stat...

  18. Constructing Diodes and Transistors for Ultracold Atoms (United States)

    Pepino, Ronald; Cooper, John; Anderson, Dana; Holland, Murray


    The ultracold atom-optical analogy to electronic systems is presented, along with the master equation formalism that is applied to this novel physical context of system-reservoir interactions. The proposed formalism lends itself quite readily to not only the study of atomtronic systems, but also transport properties of ultracold atoms in optical lattices. We demonstrate how these systems can be configured so that they emulate the behavior of the electronic diode, field effect transistor (FET), and bipolar junction transistor (BJT). The behavior of simple logic gates: namely, the AND and OR gates are follow as direct consequences of the atomtronic BJTs.

  19. Seeing phenomena in flatland: studies of monolayers by fluorescence microscopy. (United States)

    Knobler, C M


    Monolayers formed at the interface between air and water can be seen with fluorescence microscopy. This allows the phase behavior of these monolayers to be determined by direct observation and opens up the possibility of following the kinetics of phase transformations in two-dimensional systems. Some unexpected morphologies have been discovered that provide information about the nature of monolayer phases and have connections to pattern formation in other systems.

  20. Transistor-based particle detection systems and methods (United States)

    Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful


    Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

  1. Design method for a digitally trimmable MOS transistor structure

    DEFF Research Database (Denmark)

    Ning, Feng; Bruun, Erik


    A digitally trimmable MOS transistor is a MOS transistor consisting of a drain, a source, and a main gate as well as several subgates. The transconductance of the transistor is tunabledigitally by means of connecting subgates either to the main gate or to the source terminal. In this paper......, a systematic design method for a digitally trimmable MOS transistor structure is proposed. Using the proposed method, we have designed a digitally trimmable MOS transistor structure and prototype devices were fabricated in a 2.4 micron n-well CMOS technology. Through measurements on these devices, the design...... method has been experimentally confirmed. The trimmable MOS transistor structure has been applied to a high precision current mirror to reduce mismatch in the current mirror. With the trimmable transistor structure, the mismatch can be reduced by more than one order of magnitude....

  2. High mobility and quantum well transistors design and TCAD simulation

    CERN Document Server

    Hellings, Geert


    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  3. Zitterbewegung in monolayer silicene in a magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Romera, E. [Departamento de Física Atómica, Molecular y Nuclear and Instituto Carlos I de Física Teórica y Computacional, Universidad de Granada, Fuentenueva s/n, 18071 Granada (Spain); Roldán, J.B. [Departamento de Electrónica y Tecnología de Computadores and CITIC, Universidad de Granada, Fuentenueva s/n, 18071 Granada (Spain); Santos, F. de los [Departamento de Electromagnetismo y Física de la Materia, and Instituto Carlos I de Física Teórica y Computacional, Universidad de Granada, Fuentenueva s/n, 18071 Granada (Spain)


    We study the Zitterbewegung in monolayer silicene under a perpendicular magnetic field. Using an effective Hamiltonian, we have investigated the autocorrelation function and the density currents in this material. Moreover, we have analyzed other types of periodicities of the system (classical and revival times). Finally, the above results are compared with their counterparts in two other monolayer materials subject to a magnetic field: graphene and MoS{sub 2}. - Highlights: • We study Zitterbewegung in monolayer silicene in a magnetic field. • We have analyzed other types of periodicities in silicene. • The above results are compared with other monolayer materials (graphene and MoS{sub 2})

  4. Assessment of Phospohrene Field Effect Transistors (United States)


    Promising transistors based on a few layers of phosphorus atoms," in IEEE MTT-5 IMWS- AMP , Suzhou, China, Jul. 2015, pp. 1-3. DOI: 10.1109/LED...2014.2362841. DOI: 10.1109/IMWS- AMP .2015.7324944. Keywords: Contacts, dielectric films, MOSFETs, passivation, stability. [5] X. Luo, K. Xiong, J.C. M. Hwang, Y

  5. Thermal transistor utilizing gas-liquid transition

    KAUST Repository

    Komatsu, Teruhisa S.


    We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter. © 2011 American Physical Society.

  6. Modelling and characterisation of transistors | Akande | Global ...

    African Journals Online (AJOL)

    Models and characterisation of active devices that control the flow of energy operating within and outside the active region of the operating domain are presented. Specifically, the incremental charge carrier and Ebers Moll models of the bipolar junction transistor are presented and the parameters of electrical behaviour of ...

  7. Radiation Damage In Advanced Bipolar Transistors (United States)

    Zoutendyk, John A.; Goben, Charles A.; Berndt, Dale F.


    Report describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.

  8. Advancement in organic nanofiber based transistors

    DEFF Research Database (Denmark)

    Jensen, Per Baunegaard With; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication and characte...

  9. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM


    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  10. Series transistors isolate amplifier from flyback voltage (United States)

    Banks, W.


    Circuit enables high sawtooth currents to be passed through a deflection coil and isolate the coil driving amplifier from the flyback voltage. It incorporates a switch consisting of transistors in series with the driving amplifier and deflection coil. The switch disconnects the deflection coil from the amplifier during the retrace time.

  11. Anomalously fast kinetics of lipid monolayer buckling (United States)

    Oppenheimer, Naomi; Diamant, Haim; Witten, Thomas A.


    We reexamine previous observations of folding kinetics of compressed lipid monolayers in light of the accepted mechanical buckling mechanism recently proposed by L. Pocivavsek [ScienceSCIEAS0036-807510.1126/science.1154069 320, 912 (2008)]. Using simple models, we set conservative limits on (a) the energy released in the mechanical buckling process and (b) the kinetic energy entailed by the observed folding motion. These limits imply a kinetic energy at least 30 times greater than the energy supplied by the buckling instability. We discuss possible extensions of the accepted picture that might resolve this discrepancy.

  12. Defect-Tolerant Monolayer Transition Metal Dichalcogenides

    DEFF Research Database (Denmark)

    Pandey, Mohnish; Rasmussen, Filip Anselm; Kuhar, Korina


    -principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy, while the TMDs based on group IV metals form only...... shallow defect levels and are thus predicted to be defect-tolerant. Interestingly, all the defect sensitive TMDs have valence and conduction bands with a very similar orbital composition. This indicates a bonding/antibonding nature of the gap, which in turn suggests that dangling bonds will fall inside...

  13. Fibrinogen monolayer characterization by colloid deposition. (United States)

    Nattich-Rak, Małgorzata; Adamczyk, Zbigniew; Wasilewska, Monika; Sadowska, Marta


    Colloid particle deposition was applied to characterize bovine and human fibrinogen (Fb) monolayers on mica produced by controlled adsorption under diffusion transport at pH 3.5. The surface concentration of Fb was determined by AFM enumeration of single molecules adsorbed over the substrate surface. The electrokinetic properties of Fb monolayers for various ionic strength were studied using the in situ streaming potential measurements. It was shown that Fb adsorbs irreversibly on mica for a broad range of ionic strength of 4 × 10(-4) to 0.15 M, NaCl. The overcharging of initially negative mica surface occurred for fibrinogen surface concentrations higher than 1400 μm(-2). The orientation of fibrinogen molecules in the monolayers was evaluated by the colloid deposition method involving negatively charged polystyrene latex microspheres, 820 nm in diameter. An anomalous deposition of negative latex particles on substrates exhibiting a negative zeta potential was observed, which contradicts the mean-field DLVO predictions. Measurable deposition was observed even at low ionic strength where the minimum approach distance of latex particles to the interface exceeds 70 nm (for 6 × 10(-4) M NaCl). This confirms that, at this pH, fibrinogen molecules adsorb end-on on mica assuming extended conformations with the positive charge located mostly in the end part of the αA chains. This agrees with previous experimental and theoretical results discussed in the literature (Santore, M. M.; Wertz Ch. F. Protein spreading kinetics at liquid-solid interfaces via an adsorption probe method. Langmuir 2005, 21, 10172-10178 (experimental); Adamczyk, Z.; Barbasz, J.; Cieśla, M.; Mechanisms of fibrinogen adsorption at solid substrates. Langmuir, 2011, 25, 6868-6878 (theoretical)). This unusual latex deposition on Fb monolayers was quantitatively interpreted in terms of the model developed in ref 55 (Jin, X.; Wang, N. H. L.; Tarjus, G.; Talbot, J. Irreversible adsorption on nonuniform

  14. Mixed DPPC/POPC Monolayers: All-atom Molecular Dynamics Simulations and Langmuir Monolayer Experiments

    Czech Academy of Sciences Publication Activity Database

    Olžyńska, Agnieszka; Zubek, M.; Roeselová, Martina; Korchowiec, J.; Cwiklik, Lukasz


    Roč. 1858, č. 12 (2016), s. 3120-3130 ISSN 0005-2736 R&D Projects: GA ČR GA15-14292S Institutional support: RVO:61388955 ; RVO:61388963 Keywords : phospholipid monolayers * Lung surfactant * molecular dynamics Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.498, year: 2016

  15. Template-Directed Self-Assembly of Alkanethiol Monolayers: Selective Growth on Preexisting Monolayer Edges

    NARCIS (Netherlands)

    Sharpe, R.B.A.; Burdinski, Dirk; Huskens, Jurriaan; Zandvliet, Henricus J.W.; Reinhoudt, David; Poelsema, Bene


    Self-assembled monolayers were investigated for their suitability as two-dimensional scaffolds for the selective growth of alkanethiol edge structures. Heterostructures with chemical contrast could be grown, whose dimensions were governed by both the initial pattern sizes and the process time.

  16. Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layers. (United States)

    Ting, Guy G; Acton, Orb; Ma, Hong; Ka, Jae Won; Jen, Alex K-Y


    High dielectric constant (k) metal oxides such as hafnium oxide (HfO2) have gained significant interest due to their applications in microelectronics. In order to study and control the surface properties of hafnium oxide, self-assembled monolayers (SAMs) of four different long aliphatic molecules with binding groups of phosphonic acid, carboxylic acid, and catechol were formed and characterized. Surface modification was performed to improve the interface between metal oxide and top deposited materials as well as to create suitable dielectric properties, that is, leakage current and capacitance densities, which are important in organic thin film transistors. Attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, contact angle goniometry, atomic force microscopy (AFM), and simple metal-HfO2-SAM-metal devices were used to characterize the surfaces before and after SAM modification on sol-gel processed hafnium oxide. The alkylphosphonic acid provided the best monolayer formation on sol-gel processed hafnium oxide to generate a well-packed, ultrathin dielectric exhibiting a low leakage current density of 2x10(-8) A/cm2 at an applied voltage of -2.0 V and high capacitance density of 0.55 microF/cm2 at 10 kHz. Dialkylcatechol showed similar characteristics and the potential for using the catechol SAMs to modify HfO2 surfaces. In addition, the integration of this alkylphosphonic acid SAM/hafnium oxide hybrid dielectric into pentacene-based thin film transistors yields low-voltage operation within 1.5 V and improved performance over bare hafnium oxide.

  17. Cavity plasmon polaritons in monolayer graphene

    International Nuclear Information System (INIS)

    Kotov, O.V.; Lozovik, Yu.E.


    Plasmon polaritons in a new system, a monolayer doped graphene embedded in optical microcavity, are studied here. The dispersion law for lower and upper cavity plasmon polaritons is obtained. Peculiarities of Rabi splitting for the system are analyzed; particularly, role of Dirac-like spinor (envelope) wave functions in graphene and corresponding angle factors are considered. Typical Rabi frequencies for maximal (acceptable for Dirac-like electron spectra) Fermi energy and frequencies of polaritons near polariton gap are estimated. The plasmon polaritons in considered system can be used for high-speed information transfer in the THz region. -- Highlights: → Plasmon polaritons in a monolayer doped graphene embedded in optical microcavity, are studied here. → The dispersion law for lower and upper cavity plasmon polaritons is obtained. → Peculiarities of Rabi splitting for the system are analyzed. → Role of Dirac-like wave functions in graphene and corresponding angle factors are considered. → Typical Rabi frequencies and frequencies of polaritons near polariton gap are estimated.

  18. A transistor based on 2D material and silicon junction (United States)

    Kim, Sanghoek; Lee, Seunghyun


    A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

  19. Mercury(II) selective sensors based on AlGaN/GaN transistors

    International Nuclear Information System (INIS)

    Asadnia, Mohsen; Myers, Matthew; Akhavan, N.D.; O'Donnell, Kane; Umana-Membreno, Gilberto A.; Mishra, U.K.; Nener, Brett; Baker, Murray; Parish, Giacinta


    This work presents the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor-type structure by functionalising the gate area with a polyvinyl chloride (PVC) based ion selective membrane. Sensors based on this technology are portable, robust and typically highly sensitive to the target analyte; in this case Hg 2+ . This sensor showed a rapid and stable response when it was introduced to solutions of varying Hg 2+ concentrations. At pH 2.8 in a 10 −2  M KNO 3 ion buffer, a detection limit below 10 −8  M and a linear response range between 10 −8  M-10 −4  M were achieved. This detection limit is an order of magnitude lower than the reported detection limit of 10 −7  M for thioglycolic acid monolayer functionalised AlGaN/GaN HEMT devices. Detection limits of approximately 10 −7  M and 10 −6  M in 10 −2  M Cd(NO 3 ) 2 and 10 −2  M Pb(NO 3 ) 2 ion buffers were also achieved, respectively. Furthermore, we show that the apparent gate response was near-Nernstian under various conditions. X-ray photoelectron spectroscopy (XPS) experiments confirmed that the sensing membrane is reversible after being exposed to Hg 2+ solution and rinsed with deionised water. The success of this study precedes the development of this technology in selectively sensing multiple ions in water with use of the appropriate polymer based membranes on arrays of devices. - Highlights: • This work is the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. • The sensor utilised an AlGaN/GaN transistor by functionalising the gate area with a polyvinyl chloride (PVC) based membrane. • The sensor showed a rapid and linear response between 10 −8 M-10 −4 M for Hg 2+ detection at pH 2.8 in a 10 −2 M KNO 3 ion buffer. • Detection limits of approximately 10 −7 M and 10 −6 M in 10 −2 M Cd(NO 3 ) 2 and 10 −2 M Pb(NO 3 ) 2 ion buffers

  20. Electronic properties of organic monolayers and molecular devices

    Indian Academy of Sciences (India)

    E-mail: Abstract. We review some of our recent experimental results on charge transport in or- ganic nanostructures such as self-assembled monolayer and monolayers of organic semicon- ductors. We describe a molecular rectifying junction made from a sequential self-assembly.

  1. Self-assembled monolayers of metallosalophenes on gold

    NARCIS (Netherlands)

    Beulen, M.W.J.; van Veggel, F.C.J.M.; Reinhoudt, David


    Salophene complexes of transition metals exhibit a reversible electro- chemistry. We have synthesized salophene complexes with sulfur-containing substituents aimed at the formation of self-assembled monolayers on a gold surface. Such monolayers have interesting cation complexating properties. The

  2. Large-area and bright pulsed electroluminescence in monolayer semiconductors

    KAUST Repository

    Lien, Der-Hsien


    Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

  3. Effects of Odd–Even Side Chain Length of Alkyl-Substituted Diphenylbithiophenes on First Monolayer Thin Film Packing Structure

    KAUST Repository

    Akkerman, Hylke B.


    Because of their preferential two-dimensional layer-by-layer growth in thin films, 5,5′bis(4-alkylphenyl)-2,2′-bithiophenes (P2TPs) are model compounds for studying the effects of systematic chemical structure variations on thin-film structure and morphology, which in turn, impact the charge transport in organic field-effect transistors. For the first time, we observed, by grazing incidence X-ray diffraction (GIXD), a strong change in molecular tilt angle in a monolayer of P2TP, depending on whether the alkyl chain on the P2TP molecules was of odd or even length. The monolayers were deposited on densely packed ultrasmooth self-assembled alkane silane modified SiO2 surfaces. Our work shows that a subtle change in molecular structure can have a significant impact on the molecular packing structure in thin film, which in turn, will have a strong impact on charge transport of organic semiconductors. This was verified by quantum-chemical calculations that predict a corresponding odd-even effect in the strength of the intermolecular electronic coupling. © 2013 American Chemical Society.

  4. Recent progress in photoactive organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yutaka Wakayama


    Full Text Available Recent progress in photoactive organic field-effect transistors (OFETs is reviewed. Photoactive OFETs are divided into light-emitting (LE and light-receiving (LR OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  5. Recent progress in photoactive organic field-effect transistors. (United States)

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok


    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  6. Radiation-tolerant, sidewall-hardened SOI/MOS transistors

    International Nuclear Information System (INIS)

    Tsao, S.S.; Fleetwood, D.M.; Weaver, H.T.; Pfeiffer, L.; Celler, G.K.


    Total dose radiation effects were measured for sidewall-hardened n-channel SOI/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. The authors compare the radiation responses of transistors with three types of sidewall or edge configurations: island transistors with passivated edges, island transistors without passivated edges, and edgeless (enclosed-gate) transistors. Data from these three test devices allow clear separation of front-, back-, and edge-channel conduction. Passivated edge channels were hard to Co-60 doses in excess of 24 Mrad(Si). The overall hardness of the passivated-edge transistors is limited only by the radiation-induced threshold voltage shifts (about -1 V at 1.0 Mrad) of the top channel. No significant differences in total-dose response of ZMR and SIMOX devices were observed under the radiation conditions employed

  7. Application of the Johnson criteria to graphene transistors

    International Nuclear Information System (INIS)

    Kelly, M J


    For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications. (fast track communication)

  8. Organic Thin-Film Transistor (OTFT-Based Sensors

    Directory of Open Access Journals (Sweden)

    Daniel Elkington


    Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  9. Vertically Integrated Multiple Nanowire Field Effect Transistor. (United States)

    Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Park, Jun-Young; Bang, Tewook; Jeon, Seung-Bae; Hur, Jae; Lee, Dongil; Choi, Yang-Kyu


    A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple stiction-free and uniformly sized nanowires with the aid of the one-route all-dry etching process (ORADEP). Furthermore, the proposed FET is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality. Thus, this research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling.

  10. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa


    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/ than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  11. Benchmarking organic mixed conductors for transistors

    KAUST Repository

    Inal, Sahika


    Organic mixed conductors have garnered significant attention in applications from bioelectronics to energy storage/generation. Their implementation in organic transistors has led to enhanced biosensing, neuromorphic function, and specialized circuits. While a narrow class of conducting polymers continues to excel in these new applications, materials design efforts have accelerated as researchers target new functionality, processability, and improved performance/stability. Materials for organic electrochemical transistors (OECTs) require both efficient electronic transport and facile ion injection in order to sustain high capacity. In this work, we show that the product of the electronic mobility and volumetric charge storage capacity (µC*) is the materials/system figure of merit; we use this framework to benchmark and compare the steady-state OECT performance of ten previously reported materials. This product can be independently verified and decoupled to guide materials design and processing. OECTs can therefore be used as a tool for understanding and designing new organic mixed conductors.

  12. Nanowire field effect transistors principles and applications

    CERN Document Server

    Jeong, Yoon-Ha


    “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

  13. Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure. (United States)

    Ding, Yi-Min; Shi, Jun-Jie; Xia, Congxin; Zhang, Min; Du, Juan; Huang, Pu; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang


    To enhance the low hole mobility (∼40 cm 2 V -1 s -1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V -1 s -1 ) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 10 4 cm 2 V -1 s -1 , which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 10 3 cm 2 V -1 s -1 . The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

  14. Monolayer adsorption of noble gases on graphene (United States)

    Maiga, Sidi M.; Gatica, Silvina M.


    We report our results of simulations of the adsorption of noble gases (Kr, Ar, Xe) on graphene. For Kr, we consider two configurations: supported and free-standing graphene, where atoms are adsorbed only on one or two sides of the graphene. For Ar and Xe, we studied only the case of supported graphene. For the single-side adsorption, we calculated the two-dimensional gas-liquid critical temperature for each adsorbate. We determined the different phases of the monolayers and constructed the phase diagrams. We found two-dimensional incommensurate solid phases for krypton, argon and xenon, and a two-dimensional commensurate solid phase for krypton. For double side adsorption of Kr, we do not see evidence of an ordering transition driven by the interlayer forces.

  15. Vector assembly of colloids on monolayer substrates (United States)

    Jiang, Lingxiang; Yang, Shenyu; Tsang, Boyce; Tu, Mei; Granick, Steve


    The key to spontaneous and directed assembly is to encode the desired assembly information to building blocks in a programmable and efficient way. In computer graphics, raster graphics encodes images on a single-pixel level, conferring fine details at the expense of large file sizes, whereas vector graphics encrypts shape information into vectors that allow small file sizes and operational transformations. Here, we adapt this raster/vector concept to a 2D colloidal system and realize `vector assembly' by manipulating particles on a colloidal monolayer substrate with optical tweezers. In contrast to raster assembly that assigns optical tweezers to each particle, vector assembly requires a minimal number of optical tweezers that allow operations like chain elongation and shortening. This vector approach enables simple uniform particles to form a vast collection of colloidal arenes and colloidenes, the spontaneous dissociation of which is achieved with precision and stage-by-stage complexity by simply removing the optical tweezers.

  16. Ion beam analysis with monolayer depth resolution (United States)

    Carstanjen, H. D.


    The paper is concerned with the analysis of surfaces and near-surface layers with monolayer depth resolution by means of high resolution Rutherford backscattering (HRBS) and elastic recoil detection (HERDA) of ions with an energy of a few MeV, in combination with an electrostatic spectrometer. With this instrument, which has recently been set up at the 6 MV Pelletron accelerator of the Max-Planck-Institut für Metallforschung in Stuttgart, depth resolutions of 0.1 nm are obtained in HRBS and 0.3 nm in HERDA experiments. This paper gives a short outline of the design and performance of the spectrometer followed by various examples of applications. These comprise examples showing the analyzing power of the instrument, the analysis of an X-ray mirror by HRBS, the study of the initial oxidation of surfaces of aluminum single crystals by HERDA and recent results concerning charge exchange in ion backscattering.

  17. BUSFET -- A radiation-hardened SOI transistor

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.


    The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

  18. Planar graphene tunnel field-effect transistor


    Katkov, V. L.; Osipov, V. A.


    We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.

  19. Acid monolayer functionalized iron oxide nanoparticle catalysts (United States)

    Ikenberry, Myles

    Superparamagnetic iron oxide nanoparticle functionalization is an area of intensely active research, with applications across disciplines such as biomedical science and heterogeneous catalysis. This work demonstrates the functionalization of iron oxide nanoparticles with a quasi-monolayer of 11-sulfoundecanoic acid, 10-phosphono-1-decanesulfonic acid, and 11-aminoundecanoic acid. The carboxylic and phosphonic moieties form bonds to the iron oxide particle core, while the sulfonic acid groups face outward where they are available for catalysis. The particles were characterized by thermogravimetric analysis (TGA), transmission electron microscopy (TEM), potentiometric titration, diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS), inductively coupled plasma optical emission spectrometry (ICP-OES), X-ray photoelectron spectrometry (XPS), and dynamic light scattering (DLS). The sulfonic acid functionalized particles were used to catalyze the hydrolysis of sucrose at 80° and starch at 130°, showing a higher activity per acid site than the traditional solid acid catalyst Amberlyst-15, and comparing well against results reported in the literature for sulfonic acid functionalized mesoporous silicas. In sucrose catalysis reactions, the phosphonic-sulfonic nanoparticles (PSNPs) were seen to be incompletely recovered by an external magnetic field, while the carboxylic-sulfonic nanoparticles (CSNPs) showed a trend of increasing activity over the first four recycle runs. Between the two sulfonic ligands, the phosphonates produced a more tightly packed monolayer, which corresponded to a higher sulfonic acid loading, lower agglomeration, lower recoverability through application of an external magnetic field, and higher activity per acid site for the hydrolysis of starch. Functionalizations with 11-aminoundecanoic acid resulted in some amine groups binding to the surfaces of iron oxide nanoparticles. This amine binding is commonly ignored in iron oxide

  20. Optical driven electromechanical transistor based on tunneling effect. (United States)

    Jin, Leisheng; Li, Lijie


    A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic.

  1. Integral optoelectronic switch based on DMOS-transistors

    Directory of Open Access Journals (Sweden)

    Politanskyy L. F.


    Full Text Available The characteristics of optoelectronic couples photodiodes-DMOS-transistor are studied in the paper. There was developed a mathematical model of volt-ampere characteristic of the given optoelectronic couple which allows to determine interrelation of its electric parameters with constructive and electrophysical parameters of photodiodes and DMOS-transistors. There was suggested a construction of integral optoelectronic switch, based on DMOS-transistors on the silicon with dielectric insulation structures (SDIS. Possible is the optic control of executive devices, connected both to the source and drain circuits of the switching transistor.

  2. Npn double heterostructure bipolar transistor with ingaasn base region (United States)

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.


    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  3. A PWM transistor inverter for an ac electric vehicle drive (United States)

    Slicker, J. M.


    A prototype system consisting of closely integrated motor, inverter, and transaxle has been built in order to demonstrate the feasibility of a three-phase ac transistorized inverter for electric vehicle applications. The microprocessor-controlled inverter employs monolithic power transistors to drive an oil-cooled, three-phase induction traction motor at a peak output power of 30 kW from a 144 V battery pack. Transistor safe switching requirements are discussed, and a circuit is presented for recovering trapped snubber inductor energy at transistor turn-off.

  4. First-principles study of intrinsic phononic thermal transport in monolayer C3N (United States)

    Gao, Yan; Wang, Haifeng; Sun, Maozhu; Ding, Yingchun; Zhang, Lichun; Li, Qingfang


    Very recently, a new graphene-like crystalline, hole-free, 2D-single-layer carbon nitride C3N, has been fabricated by polymerization of 2,3-diaminophenazine and used to fabricate a field-effect transistor device with an on-off current ratio reaching 5. 5 ×1010 (Adv. Mater. 2017, 1605625). Heat dissipation plays a vital role in its practical applications, and therefore the thermal transport properties need to be explored urgently. In this paper, we perform first-principles calculations combined with phonon Boltzmann transport equation to investigate the phononic thermal transport properties of monolayer C3N, and meanwhile, a comparison with graphene is given. Our calculated intrinsic lattice thermal conductivity of C3N is 380 W/mK at room temperature, which is one order of magnitude lower than that of graphene (3550 W/mK at 300 K), but is greatly higher than many other typical 2D materials. The underlying mechanisms governing the thermal transport were thoroughly discussed and compared to graphene, including group velocities, phonon relax time, the contribution from phonon branches, phonon anharmonicity and size effect. The fundamental physics understood from this study may shed light on further studies of the newly fabricated 2D crystalline C3N sheets.

  5. Defect Structure of Localized Excitons in a WSe2 Monolayer

    KAUST Repository

    Zhang, Shuai


    The atomic and electronic structure of intrinsic defects in a WSe2 monolayer grown on graphite was revealed by low temperature scanning tunneling microscopy and spectroscopy. Instead of chalcogen vacancies that prevail in other transition metal dichalcogenide materials, intrinsic defects in WSe2 arise surprisingly from single tungsten vacancies, leading to the hole (p-type) doping. Furthermore, we found these defects to dominate the excitonic emission of the WSe2 monolayer at low temperature. Our work provided the first atomic-scale understanding of defect excitons and paved the way toward deciphering the defect structure of single quantum emitters previously discovered in the WSe2 monolayer.

  6. Mercury(II) selective sensors based on AlGaN/GaN transistors. (United States)

    Asadnia, Mohsen; Myers, Matthew; Akhavan, N D; O'Donnell, Kane; Umana-Membreno, Gilberto A; Mishra, U K; Nener, Brett; Baker, Murray; Parish, Giacinta


    This work presents the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor-type structure by functionalising the gate area with a polyvinyl chloride (PVC) based ion selective membrane. Sensors based on this technology are portable, robust and typically highly sensitive to the target analyte; in this case Hg 2+ . This sensor showed a rapid and stable response when it was introduced to solutions of varying Hg 2+ concentrations. At pH 2.8 in a 10 -2  M KNO 3 ion buffer, a detection limit below 10 -8  M and a linear response range between 10 -8  M-10 -4  M were achieved. This detection limit is an order of magnitude lower than the reported detection limit of 10 -7  M for thioglycolic acid monolayer functionalised AlGaN/GaN HEMT devices. Detection limits of approximately 10 -7  M and 10 -6  M in 10 -2  M Cd(NO 3 ) 2 and 10 -2  M Pb(NO 3 ) 2 ion buffers were also achieved, respectively. Furthermore, we show that the apparent gate response was near-Nernstian under various conditions. X-ray photoelectron spectroscopy (XPS) experiments confirmed that the sensing membrane is reversible after being exposed to Hg 2+ solution and rinsed with deionised water. The success of this study precedes the development of this technology in selectively sensing multiple ions in water with use of the appropriate polymer based membranes on arrays of devices. Crown Copyright © 2016. Published by Elsevier B.V. All rights reserved.

  7. Ambipolar MoS2 Thin Flake Transistors

    NARCIS (Netherlands)

    Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke; Iwasa, Yoshihiro

    Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS2, a

  8. The Smallest Transistor-Based Nonautonomous Chaotic Circuit

    DEFF Research Database (Denmark)

    Lindberg, Erik; Murali, K.; Tamasevicius, Arunas


    A nonautonomous chaotic circuit based on one transistor, two capacitors, and two resistors is described. The mechanism behind the chaotic performance is based on “disturbance of integration.” The forward part and the reverse part of the bipolar transistor are “fighting” about the charging...

  9. Light-emitting ambipolar organic heterostructure field-effect transistor

    NARCIS (Netherlands)

    Rost, Constance; Karg, Siegfried; Riess, Walter; Loi, Maria Antonietta; Murgia, Mauro; Muccini, Michele


    We have investigated ambipolar charge injection and transport in organic field-effect transistors (OFETs) as prerequisites for a light-emitting organic field-effect transistor (LEOFET). OFETs containing a single material as active layer generally function either as a p- or an n-channel device.

  10. Advanced Organic Permeable-Base Transistor with Superior Performance. (United States)

    Klinger, Markus P; Fischer, Axel; Kaschura, Felix; Scholz, Reinhard; Lüssem, Björn; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Kasemann, Daniel; Leo, Karl


    An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. On the 50th Anniversary of the Transistor

    DEFF Research Database (Denmark)

    Stassen, Flemming


    This paper celebrates the 50th anniversary of the invention of the bipolar transistor in 1947. Combined with the inventions of integration and planar technology, the invention of the transistor marks the beginning of a period of unprecedented growth, the industrialization of electronics....

  12. Very High Frequency Two-Port Characterization of Transistors

    DEFF Research Database (Denmark)

    Hertel, Jens Christian; Nour, Yasser; Jørgensen, Ivan Harald Holger

    To properly use transistors in VHF converters, they need to be characterized under similar conditions. This research presents a two-port method, using a network analyzer (NWA) with a S-port setup. The method is a one-shot method, providing fast results of the off-state parasitics of the transistors....

  13. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Organic semiconductor; field effect transistor; phthalocyanine; high mobility. Abstract. Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film prepared by chemical vapour deposition was used as the organic gate insulator. The annealing of the samples was ...

  14. The Complete Semiconductor Transistor and Its Incomplete Forms (United States)

    Binbin, Jie; Chih-Tang, Sah


    This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor, BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

  15. Mn-Promoted Growth and Photoluminescence of Molybdenum Disulphide Monolayer

    Directory of Open Access Journals (Sweden)

    Shengzhong Jin


    Full Text Available Molybdenum disulphide (MoS2 monolayer is a two-dimensional semiconductor material with potential applications in nano electronic devices. However, it is still a challenge to reproducibly synthesize single layer MoS2 in high quality. Herein, we report the growth of monolayer of MoS2 on the SiO2/Si substrate with manganese heterogeneous nucleation. It was shown that the Mn promotes the growth of monolayer MoS2 via heterogeneous nucleation. The growth temperature range expanded two-fold, the nucleation density increased as well. The monolayer prepared in the presence of Mn exhibits a unique red emission peak at 732 nm at room temperature compared to the sample in the absence of Mn.

  16. Experimental study of thermal rectification in suspended monolayer graphene (United States)

    Wang, Haidong; Hu, Shiqian; Takahashi, Koji; Zhang, Xing; Takamatsu, Hiroshi; Chen, Jie


    Thermal rectification is a fundamental phenomenon for active heat flow control. Significant thermal rectification is expected to exist in the asymmetric nanostructures, such as nanowires and thin films. As a one-atom-thick membrane, graphene has attracted much attention for realizing thermal rectification as shown by many molecular dynamics simulations. Here, we experimentally demonstrate thermal rectification in various asymmetric monolayer graphene nanostructures. A large thermal rectification factor of 26% is achieved in a defect-engineered monolayer graphene with nanopores on one side. A thermal rectification factor of 10% is achieved in a pristine monolayer graphene with nanoparticles deposited on one side or with a tapered width. The results indicate that the monolayer graphene has great potential to be used for designing high-performance thermal rectifiers for heat flow control and energy harvesting.

  17. Coexistence of multiple conformations in cysteamine monolayers on Au(111)

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Bilic, A; Reimers, JR


    The structural organization, catalytic function, and electronic properties of cysteamine monolayers on Au(111) have been addressed comprehensively by voltammetry, in situ scanning tunneling microscopy (STM) in anaerobic environment, and a priori molecular dynamics (MD) simulation and STM image si...

  18. Thiophene-based monolayer OFETs prepared by Langmuir techniques (United States)

    Agina, Elena V.; Sizov, Alexey S.; Anisimov, Daniil S.; Trul, Askold A.; Borshchev, Oleg V.; Paraschuk, Dmitry Y.; Shcherbina, Maxim A.; Chvalun, Sergey N.; Ponomarenko, Sergey A.


    A novel fast, easily processible and highly reproducible approach to thiophene-based monolayer OFETs fabrication by Langmuir-Blodgett or Langmuir-Schaefer techniques was developed and successfully applied. It is based on selfassembly of organosilicon derivatives of oligothiophenes or benzothienobenzothiophene on the water-air interface. Influence of the conjugation length and the anchor group chemistry of the self-assembling molecules on the monolayer structure and electric performance of monolayer OFETs was systematically investigated. The efficient monolayer OFETs with the charge carrier mobilities up to 0.01 cm2/Vs and on/off ratio up to 106 were fabricated, and their functionality in integrated circuits under normal air conditions was demonstrated.

  19. Monolayer MoS2 heterojunction solar cells

    KAUST Repository

    Tsai, Menglin


    We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.

  20. Phase emerging from intramonolayer cycloaddition on micro-patterned monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Tajuddin, Hairul A.; Manning, Robert J.; Leggett, Graham J.; Williams, Nicholas H. [Department of Chemistry, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, Malaysia and Department of Chemistry, University of Sheffield, Sheffield S3 7HF (United Kingdom); Department of Chemistry, University of Sheffield, Sheffield S3 7HF (United Kingdom)


    Cu(I)-catalyzed cycloaddition between azide and acetylene, followed by hydrolysis of ester were performed on micro-patterned self-assembled monolayer to produce smaller features. The reactions were initially performed on mixed monolayers and analysed by water contact angle (CA) and confirmed by X-ray Photoelectron Spectroscopy (XPS). The contact angle measurement has shown a drastic wetting of water on the surface of mixed monolayer indicating that the terminal groups on mixed monolayer has changed into carboxylic acid and hydroxyl terminals. The reactions work in a similar way on micro-patterned SAM and analyzed by using friction force microscope. The emerging of the new lines with high friction force on the border suggested a successful intramonolayer reactions on the border of the patterned SAM.

  1. Unsupported single-atom-thick copper oxide monolayers (United States)

    Yin, Kuibo; Zhang, Yu-Yang; Zhou, Yilong; Sun, Litao; Chisholm, Matthew F.; Pantelides, Sokrates T.; Zhou, Wu


    Oxide monolayers may present unique opportunities because of the great diversity of properties of these materials in bulk form. However, reports on oxide monolayers are still limited. Here we report the formation of single-atom-thick copper oxide layers with a square lattice both in graphene pores and on graphene substrates using aberration-corrected scanning transmission electron microscopy. First-principles calculations find that CuO is energetically stable and its calculated lattice spacing matches well with the measured value. Furthermore, free-standing copper oxide monolayers are predicted to be semiconductors with band gaps ∼3 eV. The new wide-bandgap single-atom-thick copper oxide monolayers usher a new frontier to study the highly diverse family of two-dimensional oxides and explore their properties and their potential for new applications.

  2. Tailoring self-assembled monolayers at the electrochemical interface

    Indian Academy of Sciences (India)

    Administrator Abstract. The main focus ... facilitates the packing of the molecules in the monolayers and serves as a linker between the head ..... applications of pharmaceutical and food industries. It has been shown recently that SAMs and mixed.

  3. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors (United States)

    Liu, Erfu; Fu, Yajun; Wang, Yaojia; Feng, Yanqing; Liu, Huimei; Wan, Xiangang; Zhou, Wei; Wang, Baigeng; Shao, Lubin; Ho, Ching-Hwa; Huang, Ying-Sheng; Cao, Zhengyi; Wang, Laiguo; Li, Aidong; Zeng, Junwen; Song, Fengqi; Wang, Xinran; Shi, Yi; Yuan, Hongtao; Hwang, Harold Y.; Cui, Yi; Miao, Feng; Xing, Dingyu


    Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼107) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications. PMID:25947630

  4. Nonequilibrium 2-hydroxyoctadecanoic acid monolayers: effect of electrolytes. (United States)

    Lendrum, Conrad D; Ingham, Bridget; Lin, Binhua; Meron, Mati; Toney, Michael F; McGrath, Kathryn M


    2-Hydroxyacids display complex monolayer phase behavior due to the additional hydrogen bonding afforded by the presence of the second hydroxy group. The placement of this group at the position α to the carboxylic acid functionality also introduces the possibility of chelation, a utility important in crystallization including biomineralization. Biomineralization, like many biological processes, is inherently a nonequilibrium process. The nonequilibrium monolayer phase behavior of 2-hydroxyoctadecanoic acid was investigated on each of pure water, calcium chloride, sodium bicarbonate and calcium carbonate crystallizing subphases as a precursor study to a model calcium carbonate biomineralizing system, each at a pH of ∼6. The role of the bicarbonate co-ion in manipulating the monolayer structure was determined by comparison with monolayer phase behavior on a sodium chloride subphase. Monolayer phase behavior was probed using surface pressure/area isotherms, surface potential, Brewster angle microscopy, and synchrotron-based grazing incidence X-ray diffraction and X-ray reflectivity. Complex phase behavior was observed for all but the sodium chloride subphase with hydrogen bonding, electrostatic and steric effects defining the symmetry of the monolayer. On a pure water subphase hydrogen bonding dominates with three phases coexisting at low pressures. Introduction of calcium ions into the aqueous subphase ensures strong cation binding to the surfactant head groups through chelation. The monolayer becomes very unstable in the presence of bicarbonate ions within the subphase due to short-range hydrogen bonding interactions between the monolayer and bicarbonate ions facilitated by the sodium cation enhancing surfactant solubility. The combined effects of electrostatics and hydrogen bonding are observed on the calcium carbonate crystallizing subphase. © 2011 American Chemical Society

  5. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane. (United States)

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing


    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

  6. Photogalvanic effect in monolayer black phosphorus. (United States)

    Xie, Yiqun; Zhang, Lei; Zhu, Yu; Liu, Lei; Guo, Hong


    We report a first-principles theoretical approach for analyzing linear and circular photogalvanic effects (PGEs) based on density functional theory within the nonequilibrium Green's function formalism. Using this approach we investigate the PGE phenomena in monolayer black phosphorus (MBP) doped with sulfur atoms. The impurity doping breaks the space inversion symmetry of pristine MBP, leading to a C s symmetry with a mirror reflection plane normal to the zigzag direction of the MBP lattice. Governed by this symmetry, a linear PGE is induced in both zigzag and armchair directions, and a circular PGE is induced along the zigzag direction. A robust broadband photoresponse is found from the near-infrared to the visible range for the MBP device. There is a strong anisotropy in PGE: photoresponse in the zigzag direction can be larger by an order of magnitude than that in the armchair direction. We identify the origin of the observed PGE as the inter-band transitions from the impurity and valence bands to the conduction bands, which involves a transfer of angular momentum from photons to electrons.

  7. Specific Ion Effects in Cholesterol Monolayers

    Directory of Open Access Journals (Sweden)

    Teresa Del Castillo-Santaella


    Full Text Available The interaction of ions with interfaces and, in particular, the high specificity of these interactions to the particular ions considered, are central questions in the field of surface forces. Here we study the effect of different salts (NaI, NaCl, CaCl2 and MgCl2 on monolayers made of cholesterol molecules, both experimentally (surface area vs. lateral pressure isotherms measured by a Langmuir Film Balance and theoretically (molecular dynamics (MD all-atomic simulations. We found that surface isotherms depend, both quantitatively and qualitatively, on the nature of the ions by altering the shape and features of the isotherm. In line with the experiments, MD simulations show clear evidences of specific ionic effects and also provide molecular level details on ion specific interactions with cholesterol. More importantly, MD simulations show that the interaction of a particular ion with the surface depends strongly on its counterion, a feature ignored so far in most theories of specific ionic effects in surface forces.

  8. Self-Assembled Monolayers for Dental Implants

    Directory of Open Access Journals (Sweden)

    Sidónio C. Freitas


    Full Text Available Implant-based therapy is a mature approach to recover the health conditions of patients affected by edentulism. Thousands of dental implants are placed each year since their introduction in the 80s. However, implantology faces challenges that require more research strategies such as new support therapies for a world population with a continuous increase of life expectancy, to control periodontal status and new bioactive surfaces for implants. The present review is focused on self-assembled monolayers (SAMs for dental implant materials as a nanoscale-processing approach to modify titanium surfaces. SAMs represent an easy, accurate, and precise approach to modify surface properties. These are stable, well-defined, and well-organized organic structures that allow to control the chemical properties of the interface at the molecular scale. The ability to control the composition and properties of SAMs precisely through synthesis (i.e., the synthetic chemistry of organic compounds with a wide range of functional groups is well established and in general very simple, being commercially available, combined with the simple methods to pattern their functional groups on complex geometry appliances, makes them a good system for fundamental studies regarding the interaction between surfaces, proteins, and cells, as well as to engineering surfaces in order to develop new biomaterials.

  9. Magnetic domain formation in monolayer nanoparticle films (United States)

    Maranville, Brian; Krycka, Kathryn; Borchers, Julie; Hogg, Charles; Majetich, Sara; Ijiri, Yumi


    Self-assembled magnetic nanoparticle films offer promise as data storage media, but an understanding of the interactions is missing. Modified Langmuir-Blodgett methods were used to prepare monolayer films of 7 and 11 nm diameter Fe3O4 nanoparticles with large structural domains. Small-angle neutron scattering (SANS) shows a peak at a wavevector Q corresponding to the particle size and spacing, and scattering at intermediate Q indicating possible long-range correlations. We extend to lower Q with off-specular neutron reflectivity, achieving high intensity by sacrificing resolution along one in-plane direction y while retaining high resolution in the other in-plane direction x and the normal direction z. We measure in saturation and zero field to extract magnetic scattering. In high fields, the specular scattering (Qx=0) is increased, consistent with aligned moments. Preliminary results show weak magnetic scattering for nonzero Qx . Since the maximal Qx roughly corresponds to the lowest Q in SANS, the combination of these techniques allows us to quantify field-dependent magnetic domain size.

  10. Equilibrium electrostatics of responsive polyelectrolyte monolayers. (United States)

    Wang, Kang; Zangmeister, Rebecca A; Levicky, Rastislav


    The physical behavior of polyelectrolytes at solid-liquid interfaces presents challenges both in measurement and in interpretation. An informative, yet often overlooked, property that characterizes the equilibrium organization of these systems is their membrane or rest potential. Here a general classification scheme is presented of the relationship between the rest potential and structural response of polyelectrolyte films to salt concentration. A numerical lattice theory, adapted from the polymer community, is used to analyze the rest potential response of end-tethered polyelectrolyte layers in which electrostatics and short-range contact interactions conspire to bring about different structural states. As an experimental quantity the rest potential is a readily accessible, nonperturbing metric of the equilibrium structure of a polyelectrolyte layer. A first set of measurements is reported on monolayers of end-tethered, single-stranded DNA in monovalent (NaCl) and divalent (MgCl(2)) counterion environments. Intriguingly, in NaCl electrolyte at least two different mechanisms appear by which the DNA layers can structurally relax in response to changing salt conditions. In MgCl(2) the layers appear to collapse. The possible molecular mechanisms behind these behaviors are discussed. These studies provide insight into phenomena more generally underlying polyelectrolyte applications in the chemical, environmental, and biotechnological fields.

  11. Diakoptical reliability analysis of transistorized systems

    International Nuclear Information System (INIS)

    Kontoleon, J.M.; Lynn, J.W.; Green, A.E.


    Limitations both on high-speed core availability and computation time required for assessing the reliability of large-sized and complex electronic systems, such as used for the protection of nuclear reactors, are very serious restrictions which continuously confront the reliability analyst. Diakoptic methods simplify the solution of the electrical-network problem by subdividing a given network into a number of independent subnetworks and then interconnecting the solutions of these smaller parts by a systematic process involving transformations based on connection-matrix elements associated with the interconnecting links. However, the interconnection process is very complicated and it may be used only if the original system has been cut in such a manner that a relation can be established between the constraints appearing at both sides of the cut. Also, in dealing with transistorized systems, one of the difficulties encountered is that of modelling adequately their performance under various operating conditions, since their parameters are strongly affected by the imposed voltage and current levels. In this paper a new interconnection approach is presented which may be of use in the reliability analysis of large-sized transistorized systems. This is based on the partial optimization of the subdivisions of the torn network as well as on the optimization of the torn paths. The solution of the subdivisions is based on the principles of algebraic topology, with an algebraic structure relating the physical variables in a topological structure which defines the interconnection of the discrete elements. Transistors, and other nonlinear devices, are modelled using their actual characteristics, under normal and abnormal operating conditions. Use of so-called k factors is made to facilitate accounting for use of electrical stresses. The approach is demonstrated by way of an example. (author)

  12. Density determination of langmuir-blodgett monolayer films using x-ray reflectivity technique

    International Nuclear Information System (INIS)

    Damar Yoga Kusuma


    Monolayer deposition by Langmuir-Blodgett technique produces monolayer films that are uniform with controllable thickness down to nanometer scale. To evaluate the quality of the monolayer deposition, X-ray reflectivity technique are employed to monitor the monolayers density. Langmuir-Blodgett monolayer with good coverage and uniformity results in film density close to its macroscopic film counterpart whereas films with presence of air gaps shows lower density compared to its macroscopic film counterpart. (author)

  13. Treponema pallidum Invades Intercellular Junctions of Endothelial Cell Monolayers (United States)

    Thomas, D. Denee; Navab, Mahamad; Haake, David A.; Fogelman, Alan M.; Miller, James N.; Lovett, Michael A.


    The pathogenesis of syphilis reflects invasive properties of Treponema pallidum, but the actual mode of tissue invasion is unknown. We have found two in vitro parallels of treponemal invasiveness. We tested whether motile T. pallidum could invade host cells by determining the fate of radiolabeled motile organisms added to a HeLa cell monolayer; 26% of treponemes associated with the monolayer in a trypsin-resistant niche, presumably between the monolayer and the surface to which it adhered, but did not attain intracellularity. Attachment of T. pallidum to cultured human and rabbit aortic and human umbilical vein endothelial cells was 2-fold greater than to HeLa cells. We added T. pallidum to aortic endothelial cells grown on membrane filters under conditions in which tight intercellular junctions had formed. T. pallidum was able to pass through the endothelial cell monolayers without altering tight junctions, as measured by electrical resistance. In contrast, heat-killed T. pallidum and the nonpathogen Treponema phagedenis biotype Reiter failed to penetrate the monolayer. Transmission electron micrographs of sections of the monolayer showed T. pallidum in intercellular junctions. Our in vitro observations suggest that these highly motile spirochetes may leave the circulation by invading the junctions between endothelial cells.

  14. Surface Charge Transfer Doping of Monolayer Phosphorene via Molecular Adsorption. (United States)

    He, Yuanyuan; Xia, Feifei; Shao, Zhibin; Zhao, Jianwei; Jie, Jiansheng


    Monolayer phosphorene has attracted much attention owing to its extraordinary electronic, optical, and structural properties. Rationally tuning the electrical transport characteristics of monolayer phosphorene is essential to its applications in electronic and optoelectronic devices. Herein, we study the electronic transport behaviors of monolayer phosphorene with surface charge transfer doping of electrophilic molecules, including 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), NO2, and MoO3, using density functional theory combined with the nonequilibrium Green's function formalism. F4TCNQ shows optimal performance in enhancing the p-type conductance of monolayer phosphorene. Static electronic properties indicate that the enhancement is originated from the charge transfer between adsorbed molecule and phosphorene layer. Dynamic transport behaviors demonstrate that additional channels for hole transport in host monolayer phosphorene were generated upon the adsorption of molecule. Our work unveils the great potential of surface charge transfer doping in tuning the electronic properties of monolayer phosphorene and is of significance to its application in high-performance devices.

  15. Biomembrane modeling: molecular dynamics simulation of phospholipid monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, T.R.


    As a first step toward a computer model of a biomembrane-like bilayer, a dynamic, deterministric model of a phospholipid monolayer has been constructed. The model moves phospholipid-like centers of force according to an integrated law of motion in finite difference form. Forces on each phospholipid analogue are derived from the gradient of the local potential, itself the sum of Coulombic and short-range terms. The Coulombic term is approximated by use of a finite-difference form of Poisson's equation, while the short-range term results from finite-radius, pairwise summation of a Lennard-Jones potential. Boundary potentials are treated in such a way that the model is effectively infinite in extent in the plane of the monolayer. The two-dimensional virial theorem is used to find the surface pressure of the monolayer as a function of molecular area. Pressure-versus-area curves for simulated monolayers are compared to those of real monolayers. Dependence of the simulator's behavior on Lennard-Jones parameters and the specific geometry of the molecular analogue is discussed. Implications for the physical theory of phospholipid monolayers and bilayers are developed.

  16. Functional organic field-effect transistors. (United States)

    Guo, Yunlong; Yu, Gui; Liu, Yunqi


    Functional organic field-effect transistors (OFETs) have attracted increasing attention in the past few years due to their wide variety of potential applications. Research on functional OFETs underpins future advances in organic electronics. In this review, different types of functional OFETs including organic phototransistors, organic memory FETs, organic light emitting FETs, sensors based on OFETs and other functional OFETs are introduced. In order to provide a comprehensive overview of this field, the history, current status of research, main challenges and prospects for functional OFETs are all discussed.

  17. Hafnium transistor process design for neural interfacing. (United States)

    Parent, David W; Basham, Eric J


    A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.

  18. Pass-transistor asynchronous sequential circuits (United States)

    Whitaker, Sterling R.; Maki, Gary K.


    Design methods for asynchronous sequential pass-transistor circuits, which result in circuits that are hazard- and critical-race-free and which have added degrees of freedom for the input signals, are discussed. The design procedures are straightforward and easy to implement. Two single-transition-time state assignment methods are presented, and hardware bounds for each are established. A surprising result is that the hardware realizations for each next state variable and output variable is identical for a given flow table. Thus, a state machine with N states and M outputs can be constructed using a single layout replicated N + M times.

  19. Microwave Enhanced Cotunneling in SET Transistors

    DEFF Research Database (Denmark)

    Manscher, Martin; Savolainen, M.; Mygind, Jesper


    Cotunneling in single electron tunneling (SET) devices is an error process which may severely limit their electronic and metrologic applications. Here is presented an experimental investigation of the theory for adiabatic enhancement of cotunneling by coherent microwaves. Cotunneling in SET...... transistors has been measured as function of temperature, gate voltage, frequency, and applied microwave power. At low temperatures and applied power levels, including also sequential tunneling, the results can be made consistent with theory using the unknown damping in the microwave line as the only free...

  20. Dose Rate Effects in Linear Bipolar Transistors (United States)

    Johnston, Allan; Swimm, Randall; Harris, R. D.; Thorbourn, Dennis


    Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.

  1. Radiation strength of magnetosensitive silicon transistors (United States)

    Vikulin, I. M.; Glauberman, M. A.; Kanishcheva, N. A.; Kozel, V. V.; Prokhorov, V. A.


    The effects of penetrating radiation on the magnetosensitivity of transistors exposed to fast electrons and gamma radiation from a Co-60 source are experimentally studied. The results indicate that double-collector magnetotransistors are quite resistant to radiation, and that their magnetosensitivity can be enhanced by exposing them to appropriate amounts of electron or gamma radiation. It is shown that the sensitivity depends on the properties of the material (in particular, the carrier lifetime) and on the change in the effective length of the base and the redistribution of the emitter-injected carriers between the collectors in the presence of an external magnetic field.

  2. Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals

    KAUST Repository

    Kozawa, Daichi


    Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

  3. Detection of prostate-specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Li, Jia-dong; Miao, Bin; Wei, Xiao-wei; Xie, Jie; Wu, Dong-min; Cheng, Jun-jie; Zhang, Jin-cheng; Zhang, Zhi-qiang


    In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening. (paper)

  4. Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals (United States)

    Kozawa, Daichi; Pu, Jiang; Shimizu, Ryo; Kimura, Shota; Chiu, Ming-Hui; Matsuki, Keiichiro; Wada, Yoshifumi; Sakanoue, Tomo; Iwasa, Yoshihiro; Li, Lain-Jong; Takenobu, Taishi


    Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p-n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p-n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

  5. Products and Kinetics of the Reactions of an Alkane Monolayer and a Terminal Alkene Monolayer with NO₃ Radicals

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Simone; Bertram, Allan K.


    The reactions of an alkanethiol and a terminal alkenethiol self-assembled monolayer with NO₃ radicals (in the presence of NO₂ and O₂) were studied. For the alkane monolayer, infrared (IR) spectroscopy and time-of-flight secondary ion mass spectrometry (ToF-SIMS) confirmed the formation of organonitrates (RONO₂). The observation of organonitrates is in contrast to the recent X-ray photoelectron spectroscopy (XPS) data, which showed very little nitrogen-containing surface species. The identification of organonitrates may help explain why significant volatilization of the organic chain was not observed in recent studies of alkane monolayer oxidation by NO₃ radicals. The reactive uptake coefficient (g) of NO₃ on alkene monolayers determined in our study is higher than the values obtained in a recent study using liquid and solid alkene bulk films. A possible reason for this difference may be the location of the double bond at the interface. Using the g value determined in our studies, we show that under conditions where NO₃ is high the lifetime of an alkene monolayer in the atmosphere may be short (approximately 20 min). XPS, IR, and ToF-SIMS were used to identify surface functional groups after the oxidation of the alkene monolayers by NO₃. The results are consistent with the formation of C-O, aldehyde/ketone, carboxylic groups, and nitrogen containing species.

  6. Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides

    KAUST Repository

    Zheng, Yu Jie


    © 2016 American Chemical Society. The nature and extent of electronic screening at heterointerfaces and their consequences on energy level alignment are of profound importance in numerous applications, such as solar cells, electronics etc. The increasing availability of two-dimensional (2D) transition metal dichalcogenides (TMDs) brings additional opportunities for them to be used as interlayers in "van der Waals (vdW) heterostructures" and organic/inorganic flexible devices. These innovations raise the question of the extent to which the 2D TMDs participate actively in dielectric screening at the interface. Here we study perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) monolayers adsorbed on single-layer tungsten diselenide (WSe2), bare graphite, and Au(111) surfaces, revealing a strong dependence of the PTCDA HOMO-LUMO gap on the electronic screening effects from the substrate. The monolayer WSe2 interlayer provides substantial, but not complete, screening at the organic/inorganic interface. Our results lay a foundation for the exploitation of the complex interfacial properties of hybrid systems based on TMD materials.

  7. Stable organic thin-film transistors (United States)

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard


    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  8. Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe (United States)

    Guo, Yuzheng; Robertson, John


    We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.

  9. Kelvin-probe studies of n-conductive organic field-effect transistors during operation

    Energy Technology Data Exchange (ETDEWEB)

    Luettich, Franziska; Graaf, Harald; Borczyskowski, Christian von [Chemnitz University of Technology, Institute of Physics, Optical Spectroscopy and Molecular Physics, 09126 Chemnitz (Germany); Lehmann, Daniel; Zahn, Dietrich R.T. [Chemnitz University of Technology, Institute of Physics, Semiconductor Physics, 09126 Chemnitz (Germany)


    We report on our investigations of the structural and electronic properties of n-conductive organic field-effect transistors (OFETs). For this purpose we employed the atomic force microscopy (AFM) and Kelvin-probe force microscopy (KPFM) in dual frequency mode. This study facilitates the determination of the local potential in the channel of active OFETs. We studied the influence of insulator treatment on the electrical potential and field distribution within the channel using a self-assembled monolayer of N-octadecyltrichlorosilane (OTS). For the investigated OFETs we used air-stable and electron conducting N,N{sup '}-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN{sub 2}). It appears that the insulator treatment improves the performance even if the surface topography did not change. These results can lead to a better understanding of the charge transport and injection and pave the way towards the optimisation of the electronical properties of active organic devices (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Simplified detection of the hybridized DNA using a graphene field effect transistor (United States)

    Manoharan, Arun Kumar; Chinnathambi, Shanmugavel; Jayavel, Ramasamy; Hanagata, Nobutaka


    Abstract Detection of disease-related gene expression by DNA hybridization is a useful diagnostic method. In this study a monolayer graphene field effect transistor (GFET) was fabricated for the detection of a particular single-stranded DNA (target DNA). The probe DNA, which is a single-stranded DNA with a complementary nucleotide sequence, was directly immobilized onto the graphene surface without any linker. The VDirac was shifted to the negative direction in the probe DNA immobilization. A further shift of VDirac in the negative direction was observed when the target DNA was applied to GFET, but no shift was observed upon the application of non-complementary mismatched DNA. Direct immobilization of double-stranded DNA onto the graphene surface also shifted the VDirac in the negative direction to the same extent as that of the shift induced by the immobilization of probe DNA and following target DNA application. These results suggest that the further shift of VDirac after application of the target DNA to the GFET was caused by the hybridization between the probe DNA and target DNA. PMID:28179957

  11. Implementing Silicon Nanoribbon Field-Effect Transistors as Arrays for Multiple Ion Detection. (United States)

    Stoop, Ralph L; Wipf, Mathias; Müller, Steffen; Bedner, Kristine; Wright, Iain A; Martin, Colin J; Constable, Edwin C; Fanget, Axel; Schönenberger, Christian; Calame, Michel


    Ionic gradients play a crucial role in the physiology of the human body, ranging from metabolism in cells to muscle contractions or brain activities. To monitor these ions, inexpensive, label-free chemical sensing devices are needed. Field-effect transistors (FETs) based on silicon (Si) nanowires or nanoribbons (NRs) have a great potential as future biochemical sensors as they allow for the integration in microscopic devices at low production costs. Integrating NRs in dense arrays on a single chip expands the field of applications to implantable electrodes or multifunctional chemical sensing platforms. Ideally, such a platform is capable of detecting numerous species in a complex analyte. Here, we demonstrate the basis for simultaneous sodium and fluoride ion detection with a single sensor chip consisting of arrays of gold-coated SiNR FETs. A microfluidic system with individual channels allows modifying the NR surfaces with self-assembled monolayers of two types of ion receptors sensitive to sodium and fluoride ions. The functionalization procedure results in a differential setup having active fluoride- and sodium-sensitive NRs together with bare gold control NRs on the same chip. Comparing functionalized NRs with control NRs allows the compensation of non-specific contributions from changes in the background electrolyte concentration and reveals the response to the targeted species.

  12. Implementing Silicon Nanoribbon Field-Effect Transistors as Arrays for Multiple Ion Detection

    Directory of Open Access Journals (Sweden)

    Ralph L. Stoop


    Full Text Available Ionic gradients play a crucial role in the physiology of the human body, ranging from metabolism in cells to muscle contractions or brain activities. To monitor these ions, inexpensive, label-free chemical sensing devices are needed. Field-effect transistors (FETs based on silicon (Si nanowires or nanoribbons (NRs have a great potential as future biochemical sensors as they allow for the integration in microscopic devices at low production costs. Integrating NRs in dense arrays on a single chip expands the field of applications to implantable electrodes or multifunctional chemical sensing platforms. Ideally, such a platform is capable of detecting numerous species in a complex analyte. Here, we demonstrate the basis for simultaneous sodium and fluoride ion detection with a single sensor chip consisting of arrays of gold-coated SiNR FETs. A microfluidic system with individual channels allows modifying the NR surfaces with self-assembled monolayers of two types of ion receptors sensitive to sodium and fluoride ions. The functionalization procedure results in a differential setup having active fluoride- and sodium-sensitive NRs together with bare gold control NRs on the same chip. Comparing functionalized NRs with control NRs allows the compensation of non-specific contributions from changes in the background electrolyte concentration and reveals the response to the targeted species.

  13. Probing quantum Hall states with single-electron transistors at high magnetic fields (United States)

    Gustafsson, Martin; Yankowitz, Matthew; Forsythe, Carlos; Zhu, Xiaoyang; Dean, Cory

    The sequence of fractional quantum Hall states in graphene is not yet fully understood, largely due to disorder-induced limitations of conventional transport studies. Measurements of magnetotransport in other 2D crystals are further complicated by the difficulties in making ohmic contact to the materials. On the other hand, bulk electronic compressibility can provide clear signatures of the integer and fractional quantum Hall effects, does not require ohmic contact, and can be localized to regions of low disorder. The single-electron transistor (SET) is a suitable tool for such experiments due to its small size and high charge sensitivity, which allow electric fields penetrating the 2D electron system to be detected locally and with high fidelity. Here we report studies of exfoliated 2D van der Waals materials fully encapsulated in flakes of hexagonal boron nitride. SETs are fabricated lithographically on top of the encapsulation, yielding a structure which lends itself to experiments at high electric and magnetic fields. We demonstrate the method on monolayer graphene, where we observe fractional quantum Hall states at all filling factors ν = n / 3 up to n = 17 and extract their associated energy gaps for magnetic fields up to 31 tesla.

  14. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim


    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  15. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang


    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  16. FET immunosensor for hemoglobin A1c using a gold nanofilm grown by a seed-mediated technique and covered with mixed self-assembled monolayers

    International Nuclear Information System (INIS)

    Xue, Q.; Bian, C.; Tong, J.; Sun, J.; Zhang, H.; Xia, S.


    A micro FET-based immunosensor was developed for the determination of hemoglobin-A1c (HbA1c). The HbA1c/hemoglobin ratio is an important index in diabetes control. The sensor was fabricated by Complementary Metal-Oxide-Semiconductor Transistor (CMOS) and Micro Electronic Mechanical System (MEMS) techniques. The antibodies were immobilized via mixed self-assembled monolayers (SAMs) on a gold nanofilm. The nanofilm was deposited on a gold electrode by seed-mediated growth and gave a uniform and well distributed coverage. Nonspecific sites and interferences by noise were eliminated by covering the AuNPs with mixed SAMs. Compared to the immunosensor fabricated via the mixed SAMs method without gold nanofilm, the immunosensor displays a more than 2-fold sensitivity. The immunosensor is capable of detecting HbA1c and hemoglobin in hemolyzed and diluted whole blood, and results showed good agreement with the established clinical method. (author)

  17. Two-dimensional square ternary Cu2MX4 (M = Mo, W; X = S, Se) monolayers and nanoribbons predicted from density functional theory

    KAUST Repository

    Gan, Liyong


    Two-dimensional (2D) materials often adopt a hexagonal lattice. We report on a class of 2D materials, Cu2MX4 (M = Mo, W; X = S, Se), that has a square lattice. Up to three monolayers, the systems are kinetically stable. All of them are semiconductors with band gaps from 2.03 to 2.48 eV. Specifically, the states giving rise to the valence band maximum are confined to the Cu and X atoms, while those giving rise to the conduction band minimum are confined to the M atoms, suggesting that spontaneous charge separation occurs. The semiconductive nature makes the materials promising for transistors, optoelectronics, and solar energy conversion. Moreover, the ferromagnetism on the edges of square Cu2MX4 nanoribbons opens applications in spintronics.

  18. Organic semiconductors for organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yoshiro Yamashita


    Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

  19. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David


    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  20. Toward complementary ionic circuits: the npn ion bipolar junction transistor. (United States)

    Tybrandt, Klas; Gabrielsson, Erik O; Berggren, Magnus


    Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable transistor characteristics over extensive time of operation and ion current switch times below 10 s. Our results promise complementary chemical circuits similar to the electronic equivalence, which has proven invaluable in conventional electronic applications.

  1. A gallium phosphide high-temperature bipolar junction transistor (United States)

    Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.


    Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

  2. Modeling of Transistor's Tracking Behavior in Compact Models

    Directory of Open Access Journals (Sweden)

    Ning Lu


    Full Text Available We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous (−1/2 tracking relations among transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among transistors.

  3. Phase behavior of lipid monolayers containing DPPC and cholesterol analogs. (United States)

    Stottrup, Benjamin L; Keller, Sarah L


    We investigate the miscibility phase behavior of lipid monolayers containing a wide variety of sterols. Six of the sterols satisfy a definition from an earlier study of "membrane-active sterols" in bilayers (cholesterol, epicholesterol, lathosterol, dihydrocholesterol, ergosterol, and desmosterol), and six do not (25-hydroxycholesterol, lanosterol, androstenolone, coprostanol, cholestane, and cholestenone). We find that monolayers containing dipalmitoyl phosphatidylcholine mixed with membrane-active sterols generally produce phase diagrams containing two distinct regions of immiscible liquid phases, whereas those with membrane-inactive sterols generally do not. This observation establishes a correlation between lipid monolayers and bilayers. It also demonstrates that the ability to form two regions of immiscibility in monolayers is not one of the biophysical attributes that explains cholesterol's predominance in animal cell membranes. Furthermore, we find unusual phase behavior for dipalmitoyl phosphatidylcholine monolayers containing 25-hydroxycholesterol, which produce both an upper and a lower miscibility transition. The lower transition correlates with a sharp change of slope in the pressure-area isotherm.

  4. Study of iridium silicide monolayers using density functional theory (United States)

    Popis, Minh D.; Popis, Sylvester V.; Oncel, Nuri; Hoffmann, Mark R.; ćakır, Deniz


    In this study, we investigated physical and electronic properties of possible two-dimensional structures formed by Si (silicon) and Ir (iridium). To this end, different plausible structures were modeled by using density functional theory and the cohesive energies calculated for the geometry of optimized structures, with the lowest equilibrium lattice constants. Among several candidate structures, we identified three mechanically (via elastic constants and Young's modulus), dynamically (via phonon calculations), and thermodynamically stable iridium silicide monolayer structures. The lowest energy structure has a chemical formula of Ir2Si4 (called r-IrSi2), with a rectangular lattice (Pmmn space group). Its cohesive energy was calculated to be -0.248 eV (per IrSi2 unit) with respect to bulk Ir and bulk Si. The band structure indicates that the Ir2Si4 monolayer exhibits metallic properties. Other stable structures have hexagonal (P-3m1) and tetragonal (P4/nmm) cell structures with 0.12 and 0.20 eV/f.u. higher cohesive energies, respectively. Our calculations showed that Ir-Si monolayers are reactive. Although O2 molecules exothermically dissociate on the surface of the free-standing iridium silicide monolayers with large binding energies, H2O molecules bind to the monolayers with a rather weak interaction.

  5. Structure and function evolution of thiolate monolayers on gold

    Energy Technology Data Exchange (ETDEWEB)

    Edwards, Grant Alvin [Iowa State Univ., Ames, IA (United States)


    The use of n-alkanethiolate self-assembled monolayers on gold has blossomed in the past few years. These systems have functioned as models for common interfaces. Thiolate monolayers are ideal because they are easily modified before or after deposition. The works contained within this dissertation include interfacial characterization (infrared reflection absorption spectroscopy, ellipsometry, contact angle, scanning probe microscopy, and heterogeneous electron-transfer kinetics) and various modeling scenarios. The results of these characterizations present ground-breaking insights into the structure, function, and reproducible preparation of these monolayers. Surprisingly, three interfacial properties (electron-transfer, contact angle, and ellipsometry) were discovered to depend directly on the odd-even character of the monolayer components. Molecular modeling was utilized to investigate adlayer orientation, and suggests that these effects are adlayer structure specific. Finally, the electric force microscopy and theoretical modeling investigations of monolayer samples are presented, which show that the film dielectric constant, thickness, and dipole moment directly affect image contrast. In addition, the prospects for utilization of this emerging technique are outlined.

  6. Structure and Function Evolution of Thiolate Monolayers on Gold

    Energy Technology Data Exchange (ETDEWEB)

    Edwards, Grant Alvin [Iowa State Univ., Ames, IA (United States)


    The use of n-alkanethiolate self-assembled monolayers on gold has blossomed in the past few years. These systems have functioned as models for common interfaces. Thiolate monolayers are ideal because they are easily modified before or after deposition. The works contained within this dissertation include interfacial characterization (inbred reflection absorption spectroscopy, ellipsometry, contact angle, scanning probe microscopy, and heterogeneous electron-transfer kinetics) and various modeling scenarios. The results of these characterizations present ground-breaking insights into the structure, function, and reproducible preparation of these monolayers. Surprisingly, three interfacial properties (electron-transfer, contact angle, and ellipsometry) were discovered to depend directly on the odd-even character of the monolayer components. Molecular modeling was utilized to investigate adlayer orientation, and suggests that these effects are adlayer structure specific. Finally, the electric force microscopy and theoretical modeling investigations of monolayer samples are presented, which show that the film dielectric constant, thickness, and dipole moment directly affect image contrast. In addition, the prospects for utilization of this emerging technique are outlined.

  7. Evidence of indirect gap in monolayer WSe2

    KAUST Repository

    Hsu, Wei-Ting


    Monolayer transition metal dichalcogenides, such as MoS2 and WSe2, have been known as direct gap semiconductors and emerged as new optically active materials for novel device applications. Here we reexamine their direct gap properties by investigating the strain effects on the photoluminescence of monolayer MoS2 and WSe2. Instead of applying stress, we investigate the strain effects by imaging the direct exciton populations in monolayer WSe2–MoS2 and MoSe2–WSe2 lateral heterojunctions with inherent strain inhomogeneity. We find that unstrained monolayer WSe2 is actually an indirect gap material, as manifested in the observed photoluminescence intensity–energy correlation, from which the difference between the direct and indirect optical gaps can be extracted by analyzing the exciton thermal populations. Our findings combined with the estimated exciton binding energy further indicate that monolayer WSe2 exhibits an indirect quasiparticle gap, which has to be reconsidered in further studies for its fundamental properties and device applications.

  8. Enhanced piezoelectricity of monolayer phosphorene oxides: a theoretical study. (United States)

    Yin, Huabing; Zheng, Guang-Ping; Gao, Jingwei; Wang, Yuanxu; Ma, Yuchen


    Two-dimensional (2D) piezoelectric materials have potential applications in miniaturized sensors and energy conversion devices. In this work, using first-principles simulations at different scales, we systematically study the electronic structures and piezoelectricity of a series of 2D monolayer phosphorene oxides (POs). Our calculations show that the monolayer POs have tunable band gaps along with remarkable piezoelectric properties. The calculated piezoelectric coefficient d 11 of 54 pm V -1 in POs is much larger than those of 2D transition metal dichalcogenide monolayers and the widely used bulk α-quartz and AlN, and almost reaches the level of the piezoelectric effect in recently discovered 2D GeS. Furthermore, two other considerable piezoelectric coefficients, i.e., d 31 and d 26 with values of -10 pm V -1 and 21 pm V -1 , respectively, are predicted in some monolayer POs. We also examine the correlation between the piezoelectric coefficients and energy stability. The enhancement of piezoelectricity for monolayer phosphorene by oxidation will broaden the applications of phosphorene and phosphorene derivatives in nano-sized electronic and piezotronic devices.

  9. Thermal conductivity of a h-BCN monolayer. (United States)

    Zhang, Ying-Yan; Pei, Qing-Xiang; Liu, Hong-Yuan; Wei, Ning


    A hexagonal graphene-like boron-carbon-nitrogen (h-BCN) monolayer, a new two-dimensional (2D) material, has been synthesized recently. Herein we investigate for the first time the thermal conductivity of this novel 2D material. Using molecular dynamics simulations based on the optimized Tersoff potential, we found that the h-BCN monolayers are isotropic in the basal plane with close thermal conductivity magnitudes. Though h-BCN has the same hexagonal lattice as graphene and hexagonal boron nitride (h-BN), it exhibits a much lower thermal conductivity than the latter two materials. In addition, the thermal conductivity of h-BCN monolayers is found to be size-dependent but less temperature-dependent. Modulation of the thermal conductivity of h-BCN monolayers can also be realized by strain engineering. Compressive strain leads to a monotonic decrease in the thermal conductivity while the tensile strain induces an up-then-down trend in the thermal conductivity. Surprisingly, the small tensile strain can facilitate the heat transport of the h-BCN monolayers.

  10. Piezoelectric effect on the thermal conductivity of monolayer gallium nitride (United States)

    Zhang, Jin


    Using molecular dynamics and density functional theory simulations, in this work, we find that the heat transport property of the monolayer gallium nitride (GaN) can be efficiently tailored by external electric field due to its unique piezoelectric characteristic. As the monolayer GaN possesses different piezoelectric properties in armchair and zigzag directions, different effects of the external electric field on thermal conductivity are observed when it is applied in the armchair and zigzag directions. Our further study reveals that due to the elastoelectric effect in the monolayer GaN, the external electric field changes the Young's modulus and therefore changes the phonon group velocity. Also, due to the inverse piezoelectric effect, the applied electric field induces in-plane stress in the monolayer GaN subject to a length constraint, which results in the change in the lattice anharmonicity and therefore affects the phonon mean free path. Furthermore, for relatively long GaN monolayers, the in-plane stress may trigger the buckling instability, which can significantly reduce the phonon mean free path.

  11. Growth of cells superinoculated onto irradiated and nonirradiated confluent monolayers

    International Nuclear Information System (INIS)

    Matsuoka, H.; Ueo, H.; Sugimachi, K.


    We prepared confluent monolayers of normal BALB/c 3T3 cells and compared differences in the growth of four types of cells superinoculated onto these nonirradiated and irradiated monolayers. The test cells were normal BALB/c 3T3 A31 cells, a squamous cell carcinoma from a human esophageal cancer (KSE-1), human fetal fibroblasts, and V-79 cells from Chinese hamster lung fibroblasts. Cell growth was checked by counting the cell number, determining [3H]thymidine incorporation and assessing colony formation. We found that on nonirradiated monolayers, colony formation of human fetal fibroblasts and normal BALB/c 3T3 cells was completely inhibited. On irradiated cells, test cells did exhibit some growth. KSE-1 cells, which had a low clonogenic efficiency on plastic surfaces, formed colonies on both irradiated and nonirradiated cells. On these monolayers, the clonogenic efficiency of V-79 cells was also higher than that on plastic surfaces. We conclude that the nonirradiated monolayer of BALB/c 3T3 cells completely inhibits the growth of superinoculated normal BALB/c 3T3 and human fetal fibroblasts, while on the other hand, they facilitate the growth of neoplastic KSE-1 and V-79 cells by providing a surface for cell adherence and growth, without affecting the presence of normal cells in co-cultures

  12. Pressure Sensitive Insulated Gate Field Effect Transistor (United States)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  13. Direct coupled amplifiers using field effect transistors

    International Nuclear Information System (INIS)

    Fowler, E.P.


    The concept of the uni-polar field effect transistor (P.E.T.) was known before the invention of the bi-polar transistor but it is only recently that they have been made commercially. Being produced as yet only in small quantities, their price imposes a restriction on use to circuits where their peculiar properties can be exploited to the full. One such application is described here where the combination of low voltage drift and relatively low input leakage current are necessarily used together. One of the instruments used to control nuclear reactors has a logarithmic response to the mean output current from a polarised ionisation chamber. The logarithmic signal is then differentiated electrically, the result being displayed on a meter calibrated to show the reactor divergence or doubling time. If displayed in doubling time the scale is calibrated reciprocally. Because of the wide range obtained in the logarithmic section and the limited supply voltage, an output of 1 volt per decade change in ionisation current is used. Differentiating this gives a current of 1.5 x 10 -8 A for p.s.D. (20 sec. doubling time) in the differentiating amplifier. To overcome some of the problems of noise due to statistical variations in input current, the circuit design necessitates a resistive path to ground at the amplifier input of 20 M.ohms. A schematic diagram is shown. 1. It is evident that a zero drift of 1% can be caused by a leakage current of 1.5 x 10 -10 A or an offset voltage of 3 mV at the amplifier input. Although the presently used electrometer valve is satisfactory from the point of view of grid current, there have been sudden changes in grid to grid voltage (the valve is a double triode) of up to 10 m.V. It has been found that a pair of F.E.T's. can be used to replace the electrometer valve so long as care is taken in correct balance of the two devices. An investigation has been made into the characteristics of some fourteen devices to see whether those with very

  14. Light Emitting Transistors of Organic Single Crystals (United States)

    Iwasa, Yoshihiro


    Organic light emitting transistors (OLETs) are attracting considerable interest as a novel function of organic field effect transistors (OFETs). Besides a smallest integration of light source and current switching devices, OLETs offer a new opportunity in the fundamental research on organic light emitting devices. The OLET device structure allows us to use organic single crystals, in contrast to the organic light emitting diodes (OLEDs), the research of which have been conducted predominantly on polycrystalline or amorphous thin films. In the case of OFETs, use of single crystals have produced a significant amount of benefits in the studies of pursuit for the highest performance limit of FETs, intrinsic transport mechanism in organic semiconductors, and application of the single crystal transistors. The study on OLETs have been made predominantly on polycrystalline films or multicomponent heterojunctions, and single crystal study is still limited to tetracene [1] and rubrene [2], which are materials with relatively high mobility, but with low photoluminescence efficiency. In this paper, we report fabrication of single crystal OLETs of several kinds of highly luminescent molecules, emitting colorful light, ranging from blue to red. Our strategy is single crystallization of monomeric or oligomeric molecules, which are known to have a very high photoluminescence efficiency. Here we report the result on single crystal LETs of rubrene (red), 4,4'-bis(diphenylvinylenyl)-anthracene (green), 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) (green), and 1,3,6,8-tetraphenylpyrene (TPPy) (blue), all of which displayed ambipolar transport as well as peculiar movement of voltage controlled movement of recombination zone, not only from the surface of the crystal but also from the edges of the crystals, indicting light confinement inside the crystal. Realization of ambipolar OLET with variety of single crystals indicates that the fabrication method is quite versatile to various light

  15. Fullerene nanostructures, monolayers and thin films

    International Nuclear Information System (INIS)

    Cotier, B.N.


    The interaction of submonolayer, monolayer and multilayer coverages of C 60 with the Ag/Si(111)-(√3x√3)R30 deg. (√3Ag/Si) and Si(111)-7x7 surfaces has been investigated using atomic force microscopy (AFM), photoelectron spectroscopy (PES) and ultra high vacuum scanning tunneling microscopy (UHV-STM). It is shown that it is possible to preserve the √3Ag/Si surface, normally corrupted by exposure to air, in ambient conditions when immersed beneath a few layers of C 60 molecules. Upon removal of the fullerene layers in the UHV-STM some corruption is observed which is linked to the morphology of the fullerene film (defined by the nature of the interaction of C 60 with √3Ag/Si). This technique opens up the possibility of performing experiments on the clean √3Ag/Si surface outside of UHV conditions. With the discovery of techniques whereby structures may be formed that are composed of only a few atoms/molecules, there is a need to perform electrical measurements in order to probe the fascinating properties of these 'nano-scale' devices. Using AFM, PES and STM evaporated metals and ion implantation have been investigated as materials for use in forming sub-micron scale contacts to nanostructures. It is found that ion implantation is a more promising approach after studying the response to annealing of treated surfaces. Electrical measurements between open/short circuited contacts and through Ag films clearly demonstrate the validity of the method, further confirmed by a PES study which probes the chemical nature of the near surface region of ion-implanted samples. Attempts have been made to form nanostructure templates between sub-micron scale contacts as a possible precursor to forming nanostructures. The bonding state of C 60 molecules on the Si(111)-7x7 surface has been in dispute for many years. To properly understand the system a comprehensive AFM, PES and STM study has been performed. PES results indicate covalent bond formation, with the number of bonds

  16. Individual SWCNT based ionic field effect transistor (United States)

    Pang, Pei; He, Jin; Park, Jae Hyun; Krstic, Predrag; Lindsay, Stuart


    Here we report that the ionic current through a single-walled carbon nanotube (SWCNT) can be effectively gated by a perpendicular electrical field from a top gate electrode, working as ionic field effect transistor. Both our experiment and simulation confirms that the electroosmotic current (EOF) is the main component in the ionic current through the SWCNT and is responsible for the gating effect. We also studied the gating efficiency as a function of solution concentration and pH and demonstrated that the device can work effectively in the physiological relevant condition. This work opens the door to use CNT based nanofluidics for ion and molecule manipulation. This work was supported by the DNA Sequencing Technology Program of the National Human Genome Research Institute (1RC2HG005625-01, 1R21HG004770-01), Arizona Technology Enterprises and the Biodesign Institute.

  17. Printed Thin Film Transistors: Research from China. (United States)

    Tong, Sichao; Sun, Jia; Yang, Junliang


    Thin film transistors (TFTs) have experienced tremendous development during the past decades and show great potential applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFTs components including semiconductors, dielectrics and electrodes, as well as fully-printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed as well.

  18. Antiferromagnetic Spin Wave Field-Effect Transistor (United States)

    Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; Xiao, Di


    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale. PMID:27048928

  19. Modeling quantization effects in field effect transistors

    CERN Document Server

    Troger, C


    Numerical simulation in the field of semiconductor device development advanced to a valuable, cost-effective and flexible facility. The most widely used simulators are based on classical models, as they need to satisfy time and memory constraints. To improve the performance of field effect transistors such as MOSFETs and HEMTs these devices are continuously scaled down in their dimensions. Consequently the characteristics of such devices are getting more and more determined by quantum mechanical effects arising from strong transversal fields in the channel. In this work an approach based on a two-dimensional electron gas is used to describe the confinement of the carriers. Quantization is considered in one direction only. For the derivation of a one-dimensional Schroedinger equation in the effective mass framework a non-parabolic correction for the energy dispersion due to Kane is included. For each subband a non-parabolic dispersion relation characterized by subband masses and subband non-parabolicity coeffi...

  20. Transistorized pulse amplifiers (A.I.T.)

    International Nuclear Information System (INIS)

    Feyt, J.; Couly, J.P.


    The two amplifiers whose design and operation are described in this report have been studied for neutron detection units used in piles. They are designed to allow an important reduction of the volume and of the weight of the detector and its amplifier, and to simplify the operation of the detection assembly. To these characteristics can be added the mechanical and electrical robustness and the very reduced micro-phony. The first transistorized amplifier (AIT.1) is simple, very robust, and can be used for radioprotection installations. The second (AIT.4) has a better performance and makes it possible to replace the APT.2 in most of its applications (it has even been used satisfactorily in an apparatus where the micro-phony and the sensitivity to interference of the APT.2 made this latter unusable). (author) [fr

  1. Marrying Excitons and Plasmons in Monolayer Transition-Metal Dichalcogenides (United States)

    Van Tuan, Dinh; Scharf, Benedikt; Žutić, Igor; Dery, Hanan


    Just as photons are the quanta of light, plasmons are the quanta of orchestrated charge-density oscillations in conducting media. Plasmon phenomena in normal metals, superconductors, and doped semiconductors are often driven by long-wavelength Coulomb interactions. However, in crystals whose Fermi surface is comprised of disconnected pockets in the Brillouin zone, collective electron excitations can also attain a shortwave component when electrons transition between these pockets. In this work, we show that the band structure of monolayer transition-metal dichalcogenides gives rise to an intriguing mechanism through which shortwave plasmons are paired up with excitons. The coupling elucidates the origin for the optical sideband that is observed repeatedly in monolayers of WSe2 and WS2 but not understood. The theory makes it clear why exciton-plasmon coupling has the right conditions to manifest itself distinctly only in the optical spectra of electron-doped tungsten-based monolayers.

  2. Nanomechanical resonators based on group IV element monolayers (United States)

    He, Ji-Dong; Sun, Jia-Sheng; Jiang, Jin-Wu


    We perform molecular dynamics simulations to investigate the energy dissipation of the resonant oscillation for the group IV monolayers of puckered configuration, in which the oscillation is driven with different actuation velocities. We find that, in the moderate actuation velocity regime, the nonlinear coupling between the resonant oscillation mode and other high-frequency modes will lead to the non-resonant motion of the system. For the larger actuation velocity, the effective strain generated during the resonant oscillating causes a structural transition from the puckered configuration into the planar configuration, which is a characteristic energy dissipation mechanism for the resonant oscillation of these group IV puckered monolayers. Our findings shed light on mechanical applications of the group IV monolayers in the nanomechanical resonator field.

  3. Infrared spectroscopy of self-assembled monolayer films on silicon (United States)

    Rowell, N. L.; Tay, Lilin; Boukherroub, R.; Lockwood, D. J.


    Infrared vibrational spectroscopy in an attenuated total reflection (ATR) geometry has been employed to investigate the presence of organic thin layers on Si-wafer surfaces. The phenomena have been simulated to show there can be a field enhancement with the presented single-reflection ATR (SR-ATR) approach which is substantially larger than for conventional ATR or specular reflection. In SR-ATR, a discontinuity of the field normal to the film contributes a field enhancement in the lower index thin film causing a two order of magnitude increase in sensitivity. SR-ATR was employed to characterize a single monolayer of undecylenic acid self-assembled on Si(1 1 1) and to investigate a two monolayer system obtained by adding a monolayer of bovine serum albumin protein.

  4. Triptycene-terminated thiolate and selenolate monolayers on Au(111

    Directory of Open Access Journals (Sweden)

    Jinxuan Liu


    Full Text Available To study the implications of highly space-demanding organic moieties on the properties of self-assembled monolayers (SAMs, triptycyl thiolates and selenolates with and without methylene spacers on Au(111 surfaces were comprehensively studied using ultra-high vacuum infrared reflection absorption spectroscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure spectroscopy and thermal desorption spectroscopy. Due to packing effects, the molecules in all monolayers are substantially tilted. In the presence of a methylene spacer the tilt is slightly less pronounced. The selenolate monolayers exhibit smaller defect densities and therefore are more densely packed than their thiolate analogues. The Se–Au binding energy in the investigated SAMs was found to be higher than the S–Au binding energy.

  5. Self assembled monolayers of octadecyltrichlorosilane for dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vijay, E-mail: [Centre for Nanoscience and Engineering, Indian Institute of Science-Bangalore (India); Mechanical Engineering Department, Birla Institute of Technology and Science-Pilani (India); Puri, Paridhi; Nain, Shivani [Mechanical Engineering Department, Birla Institute of Technology and Science-Pilani (India); Bhat, K. N. [Centre for Nanoscience and Engineering, Indian Institute of Science-Bangalore (India); Sharma, N. N. [Mechanical Engineering Department, Birla Institute of Technology and Science-Pilani (India); School of Automobile, Mechanical & Mechatronics, Manipal University-Jaipur (India)


    Treatment of surfaces to change the interaction of fluids with them is a critical step in constructing useful microfluidics devices, especially those used in biological applications. Selective modification of inorganic materials such as Si, SiO{sub 2} and Si{sub 3}N{sub 4} is of great interest in research and technology. We evaluated the chemical formation of OTS self-assembled monolayers on silicon substrates with different dielectric materials. Our investigations were focused on surface modification of formerly used common dielectric materials SiO{sub 2}, Si{sub 3}N{sub 4} and a-poly. The improvement of wetting behaviour and quality of monolayer films were characterized using Atomic force microscope, Scanning electron microscope, Contact angle goniometer, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) monolayer deposited oxide surface.

  6. Measuring the Edge Recombination Velocity of Monolayer Semiconductors. (United States)

    Zhao, Peida; Amani, Matin; Lien, Der-Hsien; Ahn, Geun Ho; Kiriya, Daisuke; Mastandrea, James P; Ager, Joel W; Yablonovitch, Eli; Chrzan, Daryl C; Javey, Ali


    Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS 2 monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τ effective , as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on nonradiative carrier recombination. The unpassivated WS 2 monolayer disks yield an ERV ∼ 4 × 10 4 cm/s. This work quantifies the nonradiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization approach that can be used to experimentally explore edge passivation methods for 2D materials.

  7. Controlled electrodeposition of Au monolayer film on ionic liquid (United States)

    Ma, Qiang; Pang, Liuqing; Li, Man; Zhang, Yunxia; Ren, Xianpei; Liu, Shengzhong Frank


    Gold (Au) nanoparticles have been attractive for centuries for their vibrant appearance enhanced by their interaction with sunlight. Nowadays, there have been tremendous research efforts to develop them for high-tech applications including therapeutic agents, sensors, organic photovoltaics, medical applications, electronics and catalysis. However, there remains to be a challenge to fabricate a monolayer Au coating with complete coverage in controlled fashion. Here we present a facile method to deposit a uniform Au monolayer (ML) film on the [BMIM][PF6] ionic liquid substrate using an electrochemical deposition process. It demonstrates that it is feasible to prepare a solid phase coating on the liquid-based substrate. Moreover, the thickness of the monolayer coating can be controlled to a layer-by-layer accuracy.

  8. Sulfonation of alkyl phenyl ether self-assembled monolayers. (United States)

    Katash, Irit; Luo, Xianglin; Sukenik, Chaim N


    The sulfonation of phenyl ether decorated self-assembled monolayers (SAMs) was studied with an eye toward creating surfaces with a particularly high negative charge density based on a close-packed array of phenyl rings with more than one sulfonic acid group per molecule. The product distribution and kinetics of this process were studied by ultraviolet, infrared, and photoelectron spectroscopies and by monitoring changes in the thickness and wetting properties of the SAM. The sulfonation chemistry could be effected without undermining monolayer integrity and the isomer distribution of ortho- and para-monosulfonated material, along with the percentages of mono- and disulfonated molecules could be established throughout the process. As doubly sulfonated molecules appeared, the reaction slowed drastically. Ultimately, sulfonation stops completely with approximately 60% of the molecules disulfonated and 20% each of the two monosulfonated isomers. This striking constraint on monolayer reactivity and the relationship between the surface chemistry and variations in SAM structure are discussed.

  9. Photo-induced travelling waves in condensed Langmuir monolayers

    CERN Document Server

    Tabe, Y; Yokoyama, H


    We report the detailed properties of photo-induced travelling waves in liquid crystalline Langmuir monolayers composed of azobenzene derivatives. When the monolayer, in which the constituent rodlike molecules are coherently tilted from the layer normal, is weakly illuminated to undergo the trans-cis photo-isomerization, spatio-temporal periodic oscillations of the molecular azimuth begin over the entire excited area and propagate as a two-dimensional orientational wave. The wave formation takes place only when the film is formed at an asymmetric interface with broken up-down symmetry and when the chromophores are continuously excited near the long-wavelength edge of absorption to induce repeated photo-isomerizations between the trans and cis forms. Under proper illumination conditions, Langmuir monolayers composed of a wide variety of azobenzene derivatives have been confirmed to exhibit similar travelling waves with velocity proportional to the excitation power irrespective of the degree of amphiphilicity. T...

  10. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics (United States)

    National Aeronautics and Space Administration — Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to...

  11. Microwave field-efffect transistors theory, design, and application

    CERN Document Server

    Pengelly, Raymond


    This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.

  12. Reaching saturation in patterned source vertical organic field effect transistors (United States)

    Greenman, Michael; Sheleg, Gil; Keum, Chang-min; Zucker, Jonathan; Lussem, Bjorn; Tessler, Nir


    Like most of the vertical transistors, the Patterned Source Vertical Organic Field Effect Transistor (PS-VOFET) does not exhibit saturation in the output characteristics. The importance of achieving a good saturation is demonstrated in a vertical organic light emitting transistor; however, this is critical for any application requiring the transistor to act as a current source. Thereafter, a 2D simulation tool was used to explain the physical mechanisms that prevent saturation as well as to suggest ways to overcome them. We found that by isolating the source facet from the drain-source electric field, the PS-VOFET architecture exhibits saturation. The process used for fabricating such saturation-enhancing structure is then described. The new device demonstrated close to an ideal saturation with only 1% change in the drain-source current over a 10 V change in the drain-source voltage.

  13. Review of Heterojunctin Bipolar Transistor Structure, Applications, and Reliability (United States)

    Lee, C.; Kayali, S.


    Heterojunction Bipolar Transistors (HBTs) are increasingly employed in high frequency, high linerity, and high efficiency applications. As the utilization of these devices becomes more widespread, their operation will be viewed with more scrutiny.

  14. Lateral PNP bipolar transistor with aiding field diffusions (United States)

    Gallagher, R. C.; Mc Cann, D. H.


    Fabrication technique produces field aided lateral PNP transistors compatible with micropower switching circuits. The sub-collector diffusion is performed with phosphorus as the dopant and the epitaxy is grown using the higher temperature silicon tetrachloride process.

  15. Transferred substrate heterojunction bipolar transistors for submillimeter wave applications (United States)

    Fung, A.; Samoska, L.; Siegel, P.; Rodwell, M.; Urteaga, M.; Paidi, V.


    We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.

  16. Controlling charge current through a DNA based molecular transistor

    Energy Technology Data Exchange (ETDEWEB)

    Behnia, S., E-mail:; Fathizadeh, S.; Ziaei, J.


    Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I–V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive. - Highlights: • Modeling a DNA based molecular transistor and studying its transport properties. • Choosing the appropriate DNA sequence using the quantum chaos tools. • Choosing the functional interval for voltages via the inverse participation ratio tool. • Detecting the rectifier and negative differential resistance behavior of DNA.

  17. Great Experiments in Physics-Discovery of Transistor Effect that ...

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 3; Issue 9. Great Experiments in Physics - Discovery of Transistor Effect that Changed the Communication World. Amit Roy. Series Article Volume 3 Issue 9 September 1998 pp 6-13 ...

  18. Langmuir monolayers composed of single and double tail sulfobetaine lipids. (United States)

    Hazell, Gavin; Gee, Anthony P; Arnold, Thomas; Edler, Karen J; Lewis, Simon E


    Owing to structural similarities between sulfobetaine lipids and phospholipids it should be possible to form stable Langmuir monolayers from long tail sulfobetaines. By modification of the density of lipid tail group (number of carbon chains) it should also be possible to modulate the two-dimensional phase behaviour of these lipids and thereby compare with that of equivalent phospholipids. Potentially this could enable the use of such lipids for the wide array of applications that currently use phospholipids. The benefit of using sulfobetaine lipids is that they can be synthesised by a one-step reaction from cheap and readily available starting materials and will degrade via different pathways than natural lipids. The molecular architecture of the lipid can be easily modified allowing the design of lipids for specific purposes. In addition the reversal of the charge within the sulfobetaine head group relative to the charge orientation in phospholipids may modify behaviour and thereby allow for novel uses of these surfactants. Stable Langmuir monolayers were formed composed of single and double tailed sulfobetaine lipids. Surface pressure-area isotherm, Brewster Angle Microscopy and X-ray and neutron reflectometry measurements were conducted to measure the two-dimensional phase behaviour and out-of-plane structure of the monolayers as a function of molecular area. Sulfobetaine lipids are able to form stable Langmuir monolayers with two dimensional phase behaviour analogous to that seen for the well-studied phospholipids. Changing the number of carbon tail groups on the lipid from one to two promotes the existence of a liquid condensed phase due to increased Van der Waals interactions between the tail groups. Thus the structure of the monolayers appears to be defined by the relative sizes of the head and tail groups in a predictable way. However, the presence of sub-phase ions has little effect on the monolayer structure, behaviour that is surprisingly different to

  19. A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory. (United States)

    She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning


    A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Heterojunction bipolar transistor technology for data acquisition and communication (United States)

    Wang, C.; Chang, M.; Beccue, S.; Nubling, R.; Zampardi, P.; Sheng, N.; Pierson, R.


    Heterojunction Bipolar Transistor (HBT) technology has emerged as one of the most promising technologies for ultrahigh-speed integrated circuits. HBT circuits for digital and analog applications, data conversion, and power amplification have been realized, with speed performance well above 20 GHz. At Rockwell, a baseline AlGaAs/GaAs HBT technology has been established in a manufacturing facility. This paper describes the HBT technology, transistor characteristics, and HBT circuits for data acquisition and communication.

  1. Modeling of charge transport in ion bipolar junction transistors. (United States)

    Volkov, Anton V; Tybrandt, Klas; Berggren, Magnus; Zozoulenko, Igor V


    Spatiotemporal control of the complex chemical microenvironment is of great importance to many fields within life science. One way to facilitate such control is to construct delivery circuits, comprising arrays of dispensing outlets, for ions and charged biomolecules based on ionic transistors. This allows for addressability of ionic signals, which opens up for spatiotemporally controlled delivery in a highly complex manner. One class of ionic transistors, the ion bipolar junction transistors (IBJTs), is especially attractive for these applications because these transistors are functional at physiological conditions and have been employed to modulate the delivery of neurotransmitters to regulate signaling in neuronal cells. Further, the first integrated complementary ionic circuits were recently developed on the basis of these ionic transistors. However, a detailed understanding of the device physics of these transistors is still lacking and hampers further development of components and circuits. Here, we report on the modeling of IBJTs using Poisson's and Nernst-Planck equations and the finite element method. A two-dimensional model of the device is employed that successfully reproduces the main characteristics of the measurement data. On the basis of the detailed concentration and potential profiles provided by the model, the different modes of operation of the transistor are analyzed as well as the transitions between the different modes. The model correctly predicts the measured threshold voltage, which is explained in terms of membrane potentials. All in all, the results provide the basis for a detailed understanding of IBJT operation. This new knowledge is employed to discuss potential improvements of ion bipolar junction transistors in terms of miniaturization and device parameters.

  2. Single-dopant resonance in a single-electron transistor


    Golovach, V. N.; Jehl, X.; Houzet, M.; Pierre, M.; Roche, B.; Sanquer, M.; Glazman, L. I.


    Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental resu...

  3. Asymmetric tunable tunneling magnetoresistance in single-electron transistors

    CERN Document Server

    Pirmann, M; Schön, G


    We show that the tunneling magnetoresistance (TMR) of a ferromagnetic single-electron transistor in the sequential tunneling regime shows asymmetric Coulomb blockade oscillations as a function of gate voltage if the individual junction-TMRs differ. The relative amplitude of these oscillations grows significantly if the bias voltage is increased, becoming as large as 30% when the bias voltage is comparable to the charging energy of the single-electron transistor. This might be useful for potential applications requiring a tunable TMR.

  4. Photobleaching-activated micropatterning on self-assembled monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Scrimgeour, Jan; Kodali, Vamsi K; Kovari, Daniel T; Curtis, Jennifer E, E-mail: jennifer.curtis@physics.gatech.ed [School of Physics and Petit Institute for Bioengineering and Biosciences (IBB), Georgia Institute of Technology, 837 State St, Atlanta, GA 30332 (United States)


    Functional chemical micropatterns were fabricated by exploiting the photobleaching of dye-coupled species near methacrylate self-assembled monolayers. Using this approach we have demonstrated that multiple chemistries can be coupled to the monolayer using a standard fluorescence microscope. The surface bound functional groups remain active and patterns with feature sizes down to 3 {mu}m can be readily achieved with excellent signal-to-noise ratio. Control over the ligand binding density was demonstrated to illustrate the convenient route provided by this platform for fabricating complex spatial gradients in ligand density.

  5. Exciton transport phenomena in monolayer MoS2 (United States)

    Onga, Masaru; Zhang, Yijin; Ideue, Toshiya; Iwasa, Yoshihiro

    Monolayer transition metal dichalcogenides exhibit unique optical phenomena owing to the two-dimensional structure and valley degree of freedom. Many researchers have revealed that excitonic states play an important role in optical response, and have observed the diffusion transport of excitons in this system at room temperature. Here we report exciton transport phenomena in monolayer MoS2 at low temperature through photoluminescence mapping. Our results can provide us a new platform for exciton-based optoelectronics with valley degrees of freedom.

  6. Disorder-dependent valley properties in monolayer WSe2

    KAUST Repository

    Tran, Kha


    We investigate the effect of disorder on exciton valley polarization and valley coherence in monolayer WSe2. By analyzing the polarization properties of photoluminescence, the valley coherence (VC) and valley polarization (VP) are quantified across the inhomogeneously broadened exciton resonance. We find that disorder plays a critical role in the exciton VC, while affecting VP less. For different monolayer samples with disorder characterized by their Stokes shift (SS), VC decreases in samples with higher SS while VP does not follow a simple trend. These two methods consistently demonstrate that VC as defined by the degree of linearly polarized photoluminescence is more sensitive to disorder, motivating further theoretical studies.

  7. Monolayer structures of alkyl aldehydes: Odd-membered homologues

    International Nuclear Information System (INIS)

    Phillips, T.K.; Clarke, S.M.; Bhinde, T.; Castro, M.A.; Millan, C.; Medina, S.


    Crystalline monolayers of three aldehydes with an odd number of carbon atoms in the alkyl chain (C 7 , C 9 and C 11 ) at low coverages are observed by a combination of X-ray and neutron diffraction. Analysis of the diffraction data is discussed and possible monolayer crystal structures are proposed; although unique structures could not be ascertained for all molecules. We conclude that the structures are flat on the surface, with the molecules lying in the plane of the layer. The C 11 homologue is determined to have a plane group of either p2, pgb or pgg, and for the C 7 homologue the p2 plane group is preferred.

  8. Ultra-high gain diffusion-driven organic transistor (United States)

    Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio


    Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

  9. Quantum Transport in Ultra-scaled Junctionless Transistors (United States)

    Kim, Sunggeun; Luisier, Mathieu; Klimeck, Gerhard


    As the dimensions of metal-oxide-semiconductor field-effect transistors have been scaled down to a few nano-meters, short channel effects have started to significantly degrade their performance. The junctionless transistor is an alternative device structure which is expected to reduce short channel effects. However, an extreme device scaling raises another issue, namely, source-to-drain tunneling. Junctionless transistors contain several doping atoms in the channel which can enhance tunneling processes and cause electrons to scatter with them. Through self-consistent quantum transport simulations based on the tight-binding model with elelctron-phonon scattering included, it is found that junctionless nanowire transistors with a gate length of 5 nm do not outperform conventional inversion-mode transistors with the same dimension in terms of their on-state characteristics, mainly due to impurity scattering in the channel. The advantage of the junctionless transistor in the the subthreshold region vanishes due to large tunneling currents through doping impurities.

  10. Influence of channel material properties on performance of nanowire transistors (United States)

    Razavi, Pedram; Fagas, Giorgos; Ferain, Isabelle; Yu, Ran; Das, Samaresh; Colinge, Jean-Pierre


    The performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher Ion/Ioff ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics.

  11. Vertical Transistors Based on 2D Materials: Status and Prospects

    Directory of Open Access Journals (Sweden)

    Filippo Giannazzo


    Full Text Available Two-dimensional (2D materials, such as graphene (Gr, transition metal dichalcogenides (TMDs and hexagonal boron nitride (h-BN, offer interesting opportunities for the implementation of vertical transistors for digital and high-frequency electronics. This paper reviews recent developments in this field, presenting the main vertical device architectures based on 2D/2D or 2D/3D material heterostructures proposed so far. For each of them, the working principles and the targeted application field are discussed. In particular, tunneling field effect transistors (TFETs for beyond-CMOS low power digital applications are presented, including resonant tunneling transistors based on Gr/h-BN/Gr stacks and band-to-band tunneling transistors based on heterojunctions of different semiconductor layered materials. Furthermore, recent experimental work on the implementation of the hot electron transistor (HET with the Gr base is reviewed, due to the predicted potential of this device for ultra-high frequency operation in the THz range. Finally, the material sciences issues and the open challenges for the realization of 2D material-based vertical transistors at a large scale for future industrial applications are discussed.

  12. Intégration de transistor mono-électronique et transistor à atome unique sur CMOS


    Deshpande, Veeresh


    Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with ‘nanowire channel' is being considered as one feasible enabler of MOSFET scaling to end-of-roadmap. Alongside classical CMOS or Moore's law scaling, many novel device proposals exploiting nanoscale phenomena have been made either. Single Electron Transistor (SET), with its unique ‘Coulomb Blockade' phenomena, and Single Atom Transistor (SAT), as an ultimately scaled trans...

  13. First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS2 monolayer under applied out-plane strain (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Nguyen, Chuong V.


    In the present work, electronic properties and Schottky contact of graphene adsorbed on the MoS2 monolayer under applied out-plane strain are studied using density functional theory calculations. Our calculations show that weak van derpp Waals interactions between graphene and monolayer MoS2 are dominated at the interlayer distance of 3.34 Å and the binding energy per C atom of - 25.1 meV. A narrow band gap of 3.6 meV has opened in G/MoS2 heterointerface, and it can be modulated by the out-plane strain. Furthermore, the Schottky barrier and Schottky contact types in the G/MoS2 heterointerface can be controlled by the out-plane strain. At the equilibrium state (d = 3.34 Å), the intrinsic electronic structure of G/MoS2 heterointerface is well preserved and forms an n-type Schottky barrier of 0.49 eV. When the interlayer distance decreases, the transition from n-type to p-type Schottky contact occurs at d = 2.74 Å. Our studies promote the application of ultrathin G/MoS2 heterointerface in the next-generation nanoelectronic and photonic devices such as van-der-Waals-based field effect transistors.

  14. Study of interfacial strain at the α-Al2O3/monolayer MoS2 interface by first principle calculations (United States)

    Yu, Sheng; Ran, Shunjie; Zhu, Hao; Eshun, Kwesi; Shi, Chen; Jiang, Kai; Gu, Kunming; Seo, Felix Jaetae; Li, Qiliang


    With the advances in two-dimensional (2D) transition metal dichalcogenides (TMDCs) based metal-oxide-semiconductor field-effect transistor (MOSFET), the interface between the semiconductor channel and gate dielectrics has received considerable attention due to its significant impacts on the morphology and charge transport of the devices. In this study, first principle calculations were utilized to investigate the strain effect induced by the interface between crystalline α-Al2O3 (0001)/h-MoS2 monolayer. The results indicate that the 1.3 nm Al2O3 can induce a 0.3% tensile strain on the MoS2 monolayer. The strain monotonically increases with thicker dielectric layers, inducing more significant impact on the properties of MoS2. In addition, the study on temperature effect indicates that the increasing temperature induces monotonic lattice expansion. This study clearly indicates that the dielectric engineering can effectively tune the properties of 2D TMDCs, which is very attractive for nanoelectronics.

  15. Ultrafast growth of large-area monolayer MoS2 film via gold foil assistant CVD for a highly sensitive photodetector. (United States)

    Nie, Changbin; Yu, Leyong; Wei, Xingzhan; Shen, Jun; Lu, Wenqiang; Chen, Weimin; Feng, Shuanglong; Shi, Haofei


    Two-dimensional molybdenum disulfide (MoS 2 ) is a promising material for ultrasensitive photodetectors owing to its tunable band gap and high absorption coefficient. However, controlled synthesis of high-quality, large-area monolayer molybdenum disulfide (MoS 2 ) is still a challenge in practical application. In this work, we report a gold foil assistant chemical vapor deposition method for the synthesis of large-size (>400 μm) single-crystal MoS 2 film on a silicon dioxide (SiO 2 ) substrate. The influence of Au foil in enlarging the size of single-crystal MoS 2  is investigated systemically using thermal simulation in Ansys workbench 16.0, including thermal conductivity, temperature difference and thermal relaxation time of the interface of SiO 2 substrate and Au foil, which indicate that Au foil can increase the temperature of the SiO 2 substrate rapidly and decrease the temperature difference between the oven and substrate. Finally, the properties of the monolayer MoS 2 film are further confirmed using back-gated field-effect transistors: a high photoresponse of 15.6 A W -1 and a fast photoresponse time of 100 ms. The growth techniques described in this study could be beneficial for the development of other atomically thin two-dimensional transition metal dichalcogenide materials.

  16. Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary

    KAUST Repository

    Chen, Jyun-Hong


    Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS2 of 2D materials also contains 2DEG in an atomic layer as field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS2 through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer MoS2.

  17. Mercury(II) selective sensors based on AlGaN/GaN transistors

    Energy Technology Data Exchange (ETDEWEB)

    Asadnia, Mohsen, E-mail: [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Department of Engineering, Macquarie University, NSW 2109 (Australia); Myers, Matthew [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); CSIRO Energy Flagship, Kensington, Western Australia 6151 (Australia); Akhavan, N.D. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); O' Donnell, Kane [Department of Imaging and Applied Physics, Curtin University, Bentley, Western Australia 6102 (Australia); Umana-Membreno, Gilberto A. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Mishra, U.K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106 (United States); Nener, Brett [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Baker, Murray [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Parish, Giacinta [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia)


    This work presents the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor-type structure by functionalising the gate area with a polyvinyl chloride (PVC) based ion selective membrane. Sensors based on this technology are portable, robust and typically highly sensitive to the target analyte; in this case Hg{sup 2+}. This sensor showed a rapid and stable response when it was introduced to solutions of varying Hg{sup 2+} concentrations. At pH 2.8 in a 10{sup −2} M KNO{sub 3} ion buffer, a detection limit below 10{sup −8} M and a linear response range between 10{sup −8} M-10{sup −4} M were achieved. This detection limit is an order of magnitude lower than the reported detection limit of 10{sup −7} M for thioglycolic acid monolayer functionalised AlGaN/GaN HEMT devices. Detection limits of approximately 10{sup −7} M and 10{sup −6} M in 10{sup −2} M Cd(NO{sub 3}){sub 2} and 10{sup −2} M Pb(NO{sub 3}){sub 2} ion buffers were also achieved, respectively. Furthermore, we show that the apparent gate response was near-Nernstian under various conditions. X-ray photoelectron spectroscopy (XPS) experiments confirmed that the sensing membrane is reversible after being exposed to Hg{sup 2+} solution and rinsed with deionised water. The success of this study precedes the development of this technology in selectively sensing multiple ions in water with use of the appropriate polymer based membranes on arrays of devices. - Highlights: • This work is the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. • The sensor utilised an AlGaN/GaN transistor by functionalising the gate area with a polyvinyl chloride (PVC) based membrane. • The sensor showed a rapid and linear response between 10{sup −8} M-10{sup −4} M for Hg{sup 2+} detection at pH 2.8 in a 10{sup −2} M KNO{sub 3} ion buffer. • Detection limits of

  18. Advanced chemistry of monolayers at interfaces trends in methodology and technology

    CERN Document Server

    Imae, Toyoko


    Advanced Chemistry of Monolayers at Interfaces describes the advanced chemistry of monolayers at interfaces. Focusing on the recent trends of methodology and technology, which are indispensable in monolayer science. They are applied to monolayers of surfactants, amphiphiles, polymers, dendrimers, enzymes, and proteins, which serve many uses.Introduces the methodologies of scanning probe microscopy, surface force instrumentation, surface spectroscopy, surface plasmon optics, reflectometry, and near-field scanning optical microscopy. Modern interface reaction method, lithographic tech

  19. Microcontact Printing onto Oxide-Free Silicon via Highly Reactive Acid Fluoride-Functionalized Monolayers

    NARCIS (Netherlands)

    Scheres, L.M.W.; Maat, ter J.; Giesbers, M.; Zuilhof, H.


    This work describes a new route for patterning organic monolayers on oxide-free silicon by microcontact printing (µCP) on a preformed, reactive, acid-fluoride-terminated monolayer. This indirect printing approach is fast and easily preserves the oxide-free and well-defined monolayer-silicon

  20. Mechanic studies of monolayer formation on H-Si(111) surfaces

    NARCIS (Netherlands)

    Rijksen, B.M.G.


    Covalently attached organic monolayers on silicon surfaces form thermally and chemically stable platforms for (bio)functionalization of the surface. Recent advances in monolayer formation – yielding increases in monolayer quality and the complete exclusion of oxygen at modified surfaces – have

  1. Influencing the binding selectivity of self-assembled cyclodextrin monolayers on gold through their architecture

    NARCIS (Netherlands)

    de Jong, M.R.; Huskens, Jurriaan; Reinhoudt, David


    Cyclodextrin derivatives modified with seven thioether moieties (1) or with one thiol moiety (2) bind to gold. Monolayers on gold of 1 or mixed monolayers of 2 and mercaptoundecanol were characterized by electrochemistry, wettability, and atomic force microscopy (AFM). Monolayers of 1 are

  2. Electrochemical and structural characterization of self-assembled thiol monolayers on gold

    NARCIS (Netherlands)

    Sondag-Huethorst, J.A.M.


    Self-assembled alkanethiol monolayers on gold are used as model systems in a fundamental study of the potential-dependent wetting and of the galvanic metal deposition. For using such monolayers as model systems, well-defined and ordered monolayers are required. In order to control the

  3. Topography and instability of monolayers near domain boundaries

    Energy Technology Data Exchange (ETDEWEB)

    Diamant, H.; Witten, T. A.; Ege, C.; Gopal, A.; Lee, K. Y. C.


    We theoretically study the topography of a biphasic surfactant monolayer in the vicinity of domain boundaries. The differing elastic properties of the two phases generally lead to a nonflat topography of {open_quotes}mesas,{close_quotes} where domains of one phase are elevated with respect to the other phase. The mesas are steep but low, having heights of up to 10 nm. As the monolayer is laterally compressed, the mesas develop overhangs and eventually become unstable at a surface tension of about K({delta}c{sub 0}){sup 2} ({delta}c{sub 0} being the difference in spontaneous curvature and K a bending modulus). In addition, the boundary is found to undergo a topography-induced rippling instability upon compression, if its line tension is smaller than about K{delta}c{sub 0}. The effect of diffuse boundaries on these features and the topographic behavior near a critical point are also examined. We discuss the relevance of our findings to several experimental observations related to surfactant monolayers: (i) small topographic features recently found near domain boundaries; (ii) folding behavior observed in mixed phospholipid monolayers and model lung surfactants; (iii) roughening of domain boundaries seen under lateral compression; (iv) the absence of biphasic structures in tensionless surfactant films.

  4. Overcrowding drives the unjamming transition of gap-free monolayers (United States)

    Lan, Ganhui; Su, Tao

    Collective cell motility plays central roles in various biological phenomena such as wound healing, cancer metastasis and embryogenesis. These are demonstrations of the unjamming transition in biology. However, contradictory to the typical density-driven jamming in particulate assemblies, cellular systems often get unjammed in highly packed, sometimes overcrowding environments. Here, we investigate monolayers' collective behaviors when cell number changes under the gap-free constraint. We report that overcrowding can unjam gap-free monolayers through increasing isotropic compression. We show that the transition boundary is determined by the isotropic compression and the cell-cell adhesion. Furthermore, we construct the free energy landscape for the T1 topological transition during monolayer rearrangement, and discover that the landscape evolves from single-barrier W shape to double-barrier M shape during the unjamming process. We also discover a distributed-to-disordered morphological transition of cells' geometry, coinciding with the unjamming transition. Our analyses reveal that the overcrowding and adhesion induced unjamming reflects the mechanical yielding of the highly deformable monolayer, suggesting an alternative mechanism that cells may robustly gain collective mobility through proliferation in confined environments, which differs from those caused by loosing up a packed particulate assembly. This work is supported by the GWU College Facilitating Funds.

  5. Illustrative view on the magnetocrystalline anisotropy of adatoms and monolayers

    Czech Academy of Sciences Publication Activity Database

    Šipr, Ondřej; Mankovsky, S.; Polesya, S.; Bornemann, S.; Minár, J.; Ebert, H.


    Roč. 93, č. 17 (2016), s. 1-13, č. článku 174409. ISSN 2469-9950 R&D Projects: GA ČR(CZ) GAP108/11/0853 Institutional support: RVO:68378271 Keywords : magnetic anisotropy * adatom * monolayer * spin-orbit coupling Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  6. Ab initio electronic properties of dual phosphorus monolayers in silicon

    DEFF Research Database (Denmark)

    Drumm, Daniel W.; Per, Manolo C.; Budi, Akin


    , investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers’ relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device...

  7. Permethylated 12-Vertex p-Carborane Self-Assembled Monolayers

    Czech Academy of Sciences Publication Activity Database

    Scholz, F.; Nothofer, H. G.; Wessels, J. M.; Nelles, G.; Wrochem von, F.; Roy, S.; Chen, X.; Michl, Josef


    Roč. 115, č. 46 (2011), s. 22998-23007 ISSN 1932-7447 Grant - others:National Science Foundation(US) CHE-0848477 Institutional research plan: CEZ:AV0Z40550506 Keywords : p-carbone * monolayer * scanning tunneling microscopy * ultraviolet photoelectron spectroscopy * X-ray photoelectron Subject RIV: CC - Organic Chemistry Impact factor: 4.805, year: 2011

  8. Friction of different monolayer lubricants in MEMs interfaces.

    Energy Technology Data Exchange (ETDEWEB)

    Carpick, Robert W. (University of Wisconsin, Madison, WI); Street, Mark D. (University of Wisconsin, Madison, WI); Ashurst, William Robert (Auburn University, Auburn, AL); Corwin, Alex David


    This report details results from our last year of work (FY2005) on friction in MEMS as funded by the Campaign 6 program for the Microscale Friction project. We have applied different monolayers to a sensitive MEMS friction tester called the nanotractor. The nanotractor is also a useful actuator that can travel {+-}100 {micro}m in 40 nm steps, and is being considered for several MEMS applications. With this tester, we can find static and dynamic coefficients of friction. We can also quantify deviations from Amontons' and Coulomb's friction laws. Because of the huge surface-to-volume ratio at the microscale, surface properties such as adhesion and friction can dominate device performance, and therefore such deviations are important to quantify and understand. We find that static and dynamic friction depend on the monolayer lubricant applied. The friction data can be modeled with a non-zero adhesion force, which represents a deviation from Amontons' Law. Further, we show preliminary data indicating that the adhesion force depends not only on the monolayer, but also on the normal load applied. Finally, we also observe slip deflections before the transition from static to dynamic friction, and find that they depend on the monolayer.

  9. Direct measurement of the microscale conductivity of conjugated polymer monolayers

    DEFF Research Database (Denmark)

    Bøggild, Peter; Grey, Francois; Hassenkam, T.


    The in-plane conductivity of conjugated polymer monolayers is mapped here for the first time on the microscale using a novel scanning micro four-point probe (see Figure). The probe allows the source, drain, and voltage electrodes to be positioned within the same domain and the mapping results...

  10. Self-assembled monolayers on metal oxides : applications in nanotechnology

    NARCIS (Netherlands)

    Yildirim, O.


    The thesis describes the use of phosph(on)ate-based self-assembled monolayers (SAMs) to modify and pattern metal oxides. Metal oxides have interesting electronic and magnetic properties such as insulating, semiconducting, metallic, ferromagnetic etc. and SAMs can tailor the surface properties. FePt

  11. Magnetic and Structural Phases of Monolayer 02 on Graphite

    DEFF Research Database (Denmark)

    McTague, J. P.; Nielsen, Mourits


    Neutron diffraction studies of O2 thin films physisorbed on the basal plane of graphite show three distinct two-dimensional crystalline phases, all incommensurate with the substrate lattice. The low-temperature monolayer phase has a distorted triangular structure analogous to the closest...

  12. Melting mechanism in monolayers of flexible rod-shaped molecules

    DEFF Research Database (Denmark)

    Hansen, Flemming Yssing; Taub, H.


    The melting of butane and hexane monolayers adsorbed on a graphite basal-plane surface has been studied by molecular-dynamics simulations and experimentally by neutron diffraction. The simulation results are qualitatively consistent with the observed diffraction patterns and suggest a general...

  13. Applications of self-assembled monolayers in materials chemistry

    Indian Academy of Sciences (India)


    Abstract. Self-assembly provides a simple route to organise suitable organic molecules on noble metal and selected nanocluster surfaces by using monolayers of long chain organic molecules with various functionalities like –SH, –COOH, –NH2, silanes etc. These surfaces can be effectively used to build-up interesting ...

  14. Surface plasmon resonance for detecting clenbuterol: Influence of monolayer structure (United States)

    Suherman; Morita, Kinichi; Kawaguchi, Toshikazu


    Surface plasmon resonance sensor equipped with a fabricated immunosensor chip is used for detecting clenbuterol in this study. Since clenbuterol is a small analyte, indirect competitive inhibition immunoassay is employed. For fabricating the immunosurface, the Au-chip was functionalized by succinimidyl-terminated alkanethiol, and the terminal N-hydroxysuccinimide group of the self-assembled monolayer was either replaced with clenbuterol or blocked with ethanolamine. Scanning tunneling microscope experiments and electrochemical measurements depicted the domain structures of the succinimide group of succinimidyl-terminated propanethiol monolayer. The surface concentration and the orientation of succinimide group was significantly dependent on the concentration of dithiobis(succinimidyl) propionate (DSP) used in fabricating the monolayer. Furthermore, the structure of monolayer significantly influenced both the surface concentration and the orientation of clenbuterol on the sensor surface. Consequently, high coverage and standing-up configuration of clenbuterol showed high affinity for clenbuterol antibody. However, high affinity constant exhibited by the sensor surface was coupled with a low sensitivity. By contrast, lowest concentration of DSP solution (0.1 mM) used in fabricating the immunosurface showed a detection sensitivity of 3 ppt - the highest reported sensitivity for clenbuterol. For regeneration the immunosurface, 0.1 M NaOH was used and the same sensor surface could be reused for performing >100 rapid immunoreaction.

  15. Anisotropic growth of buckling-driven wrinkles in graphene monolayer. (United States)

    Liu, XiaoYi; Wang, FengChao; Wu, HengAn


    We theoretically and numerically investigate the growth of buckling-driven wrinkles in graphene monolayers. It is found that the growth of buckling-driven wrinkles in a graphene monolayer is remarkably chirality- and size-dependent. In small sizes, the flexural response of a graphene sheet cannot be accurately described by the classical Euler regime, and the non-continuum effect leads to zigzag-along-preferred buckling. With the increase of size, the width/length ratio α of the compressed region plays an important role in the growth of buckling-driven wrinkles. When α buckling happens in armchair-along compression; when 0.5 buckling. When 1.0 buckling. When α > 3.0, the non-continuum effect and chiral bending stiffness can both be neglected, and the buckling in a graphene monolayer is isotropic. The chirality-along-preferred transition of compressed buckling in a graphene monolayer leads to an improved fundamental understanding of the dynamics mechanism of graphene-based nanodevices, especially for the nanodevices with high frequency response.

  16. Photoresponsive Wettability in Monolayer Films from Sinapinic Acid

    Directory of Open Access Journals (Sweden)

    Cleverson A. S. Moura


    Full Text Available Sinapinic acid is an interesting material because it is both antioxidant and antibacterial agent. In addition, when illuminated with ultraviolet light, it can exhibit the so-called photodimerization process. In this paper, we report on the investigation of monolayer films from 3,5-dimethoxy-4-hydroxycinnamic acid (sinapinic acid, SinA deposited onto poly(allylamine hydrochloride, PAH, films. SinA monolayers were prepared by using the layer-by-layer (LbL self-assembly technique. Adsorption kinetics curves were well fitted by a biexponential function suggesting that the adsorption process is determined by two mechanisms: nucleation and growth of aggregates. By using wetting contact angle analysis, we have found that SinA monolayers exhibit photoresponsive wettability under UV irradiation (365 nm; that is, wettability decreases with increasing UV irradiation time. The photoresponse of wettability was attributed to photodimerization process. This hypothesis was supported by the dependence of surface morphological structure and absorption on UV irradiation time. The mechanism found in the well-known transcinnamic acid crystals is used to explain the photodimerization process in SinA monolayers.

  17. Tailoring self-assembled monolayers at the electrochemical interface

    Indian Academy of Sciences (India)


    SAM could be studied by this method. The IR beam is reflected at a small grazing angle from the monolayer surface and the intensity of the reflected beam is recorded. .... strates a strong decrease in capacity. 3.7b Blocking of electron transfer kinetics: With the decrease in the current for the SAM-covered electrode, one can ...

  18. Applications of self-assembled monolayers in materials chemistry

    Indian Academy of Sciences (India)

    Self-assembly provides a simple route to organise suitable organic molecules on noble metal and selected nanocluster surfaces by using monolayers of long chain organic molecules with various functionalities like -SH, -COOH, -NH2, silanes etc. These surfaces can be effectively used to build-up interesting nano level ...

  19. Single electron transistor in pure silicon (United States)

    Hu, Binhui

    As promising candidates for spin qubits, semiconductor quantum dots (QDs) have attracted tremendous research efforts. Currently most advanced progress is from GaAs QDs. Compared to GaAs, lateral QDs in 28silicon are expected to have a spin coherence time orders of magnitude longer, because 28Si has zero nuclear spin, and there is no hyperfine interaction between electron spins and nuclear spins. We have developed enhancement mode metal-oxide-semiconductor (MOS) single electron transistors (SETs) using pure silicon wafers with a bi-layer gated configuration. In an MOS-SET, the top gate is used to induce a two-dimensional electron gas (2DEG), just as in an MOS field effect transistor. The side gates deplete the 2DEG into a QD and two point contact channels; one connects the QD to the source reservoir, and the other connects the QD to the drain reservoir. We have systematically investigated the MOS-SETs at 4.2 K, and separately in a dilution refrigerator with a base temperature of 10 mK. The data show that there is an intrinsic QD in each point contact channel due to the local potential fluctuations in these SETs. However, after scaling down the SETs, we have found that the intrinsic QDs can be removed and the electrostatically defined dots dominate the device behavior, but these devices currently only work in the many-electron regime. In order to realize single electron confinement, it is necessary to continue scaling down the device and improving the interface quality. To explore the spin dynamics in silicon, we have investigated a single intrinsic QD by applying a magnetic field perpendicular to the sample surface. The magnetic field dependence of the ground-state and excited-state energy levels of the QD mostly can be explained by the Zeeman effect, with no obvious orbital effect up to 9 T. The two-electron singlet-triplet (ST) transition is first time directly observed in a silicon QD by excitation spectroscopy. In this ST transition, electron-electron Coulomb

  20. Outlook and emerging semiconducting materials for ambipolar transistors. (United States)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta


    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor. (United States)

    Chen, Lin; Cai, Fuxi; Otuonye, Ugo; Lu, Wei D


    Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si core/shell nanowires epitaxially grown and integrated on a ⟨111⟩ Si substrate were fabricated and analyzed. Because of efficient gate coupling in the nanowire-GAA transistor structure and the high density one-dimensional hole gas formed in the Ge nanowire core, excellent P-type transistor behaviors with Ion of 750 μA/μm were obtained at a moderate gate length of 544 nm with minimal short-channel effects. The experimental data can be quantitatively modeled by a GAA junctionless transistor model with few fitting parameters, suggesting the nanowire transistors can be fabricated reliably without introducing additional factors that can degrade device performance. Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask film. Analysis of the histogram of different devices yielded a single dominate peak in device parameter distribution, indicating excellent uniformity and high confidence of single nanowire operation. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter with near rail-to-rail output voltage was demonstrated, and device matching in the logic can be conveniently obtained by controlling the number of nanowires employed in different devices rather than modifying device geometry. These studies show that junctionless transistors based on vertical Ge/Si core/shell nanowires can be fabricated in a controlled fashion with excellent performance and may be used in future hybrid, high-performance circuits where bottom-up grown nanowire devices with different functionalities can be directly integrated with an existing Si platform.

  2. Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric

    Directory of Open Access Journals (Sweden)

    Deliris N. Ortiz


    Full Text Available CVD grown MoSe2 monolayers were electrically characterized at room temperature in a field effect transistor (FET configuration using an ionic liquid (IL as the gate dielectric. During the growth, instead of using MoO3 powder, ammonium heptamolybdate was used for better Mo control of the source and sodium cholate added for lager MoSe2 growth areas. In addition, a high specific capacitance (∼7 μF/cm2 IL was used as the gate dielectric to significantly reduce the operating voltage. The device exhibited ambipolar charge transport at low voltages with enhanced parameters during n- and p-FET operation. IL gating thins the Schottky barrier at the metal/semiconductor interface permitting efficient charge injection into the channel and reduces the effects of contact resistance on device performance. The large specific capacitance of the IL was also responsible for a much higher induced charge density compared to the standard SiO2 dielectric. The device was successfully tested as an inverter with a gain of ∼2. Using a common metal for contacts simplifies fabrication of this ambipolar device, and the possibility of radiative recombination of holes and electrons could further extend its use in low power optoelectronic applications.

  3. Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2 (United States)

    Lu, Haichang; Guo, Yuzheng; Robertson, John


    Although monolayer HfS2 and SnS2 do not have a direct bandgap like MoS2, they have much higher carrier mobilities. Their band offsets are favorable for use with WSe2 in tunnel field effect transistors. Here, we study the effective masses, intrinsic defects, and substitutional dopants of these dichalcogenides. We find that HfS2 has surprisingly small effective masses for a compound that might appear partly ionic. The S vacancy in HfS2 is found to be a shallow donor while that in SnS2 is a deep donor. Substitutional dopants at the S site are found to be shallow. This contrasts with MoS2 where donors and acceptors are not always shallow or with black phosphorus where dopants can reconstruct into deep non-doping configurations. It is pointed out that HfS2 is more favorable than MoS2 for semiconductor processing because it has the more convenient CVD precursors developed for growing HfO2.

  4. Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

    Directory of Open Access Journals (Sweden)

    Taekyung Lim


    Full Text Available We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA self-assembled monolayer. The HDF-PA self-assembled Al2O3 nanoparticle thin film acts as a liquid-vapour separation filter, allowing the passage of chemical vapour while blocking liquids. Prevention of the liquid from contacting the SnO2 nanowire and source-drain electrodes is required in order to avoid abnormal operation. Using this characteristic, the concentration of chemical substances in water could be evaluated by measuring the current changes in the SnO2 nanowire transistor covered with the HDF-PA self-assembled Al2O3 nanoparticle thin film.

  5. Application of tosylate-doped poly(3,4ethylenedioxythiophene) (PEDOT) films into bottom contact pentacene organic thin film transistors (OTFTs)

    International Nuclear Information System (INIS)

    Ali, M.A.; Kim, H.H.; Jeong, K.H.; Soh, H.S.; Nam, H.S.; Lee, J.G.; Lee, E.G.


    The effect of iron(III) p-toluenesulfonate hexahydrate (Fe(PTS) 3 ) concentration on the formation and patternability of poly(3,4ethylenedioxythiophene) (PEDOT) films on (3-aminopropyl)trimethoxysilane (APS) monolayer was investigated. Low deposition rate yielded highly conductive and very smooth PEDOT films. However, the spin-coated oxidants in low Fe(PTS) 3 concentrations were susceptible to moistures, leading to the poorly patterned PEDOT films. Increasing Fe(PTS) 3 concentration enabled the fine patterning of the films. The fabricated thin film transistors with PEDOT electrodes formed on 30 wt.% Fe(PTS) 3 revealed the saturation mobility of 0.16 cm 2 /V s and subthreshold slope of 0.5 V/decade. The obtained low contact resistance was 12 kΩ cm, possibly due to the negligible interface morphological discontinuity at the pentacene-PEDOT interface.

  6. Advanced insulated gate bipolar transistor gate drive (United States)

    Short, James Evans [Monongahela, PA; West, Shawn Michael [West Mifflin, PA; Fabean, Robert J [Donora, PA


    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  7. Two-dimensional bipolar junction transistors (United States)

    Gharekhanlou, Behnaz; Khorasani, Sina; Sarvari, Reza


    Recent development in fabrication technology of planar two-dimensional (2D) materials has introduced the possibility of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate patterned doping of 2D semiconductors, ideal exponential I-V characteristics may be expected. However, the theory of 2D junctions turns out to be very different to that of standard bulk junctions. Based on this theory of 2D diodes, we construct for the first time a model to describe 2D bipolar junction transistors (2D-BJTs). We derive the small-signal equivalent model, and estimate the performance of a 2D-BJT device based on graphone as the example material. A current gain of about 138 and maximum threshold frequency of 77 GHz, together with a power-delay product of only 4 fJ per 1 μm lateral width is expected at an operating voltage of 5 V. In addition, we derive the necessary formulae and a new approximate solution for the continuity equation in the 2D configuration, which have been verified against numerical solutions.

  8. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors (United States)

    Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish


    Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor.

  9. Specifics of Pulsed Arc Welding Power Supply Performance Based On A Transistor Switch


    Krampit, Nataliya Yurievna; Kust, Tatiana Sergeevna; Krampit, Maksim Andreevich


    Specifics of designing a pulsed arc welding power supply device are presented in the paper. Electronic components for managing large current was analyzed. Strengths and shortcomings of power supply circuits based on thyristor, bipolar transistor and MOSFET are outlined. As a base unit for pulsed arc welding was chosen MOSFET transistor, which is easy to manage. Measures to protect a transistor are given. As for the transistor control device is a microcontroller Arduino which has a low cost an...

  10. Inexpensive Measuring System for the Characterization of Organic Transistors

    Directory of Open Access Journals (Sweden)

    Clara Pérez-Fuster


    Full Text Available A measuring module has been specifically designed for the electrical characterization of organic semiconductor devices such as organic field effect transistors (OFETs and organic electrochemical transistors (OECTs according to the IEEE 1620-2008 standard. This device has been tested with OFETs based on 6,13-bis(triisopropylsilylethinylpentacene (TIPS-pentacene. The measuring system has been constructed using a NI-PXIe-1073 chassis with integrated controller and two NI-PXI-4132 programmable high-precision source measure units (SMUs that offer a four-quadrant ± 100 V output, with resolution down to 10 pA. LabVIEW™ has been used to develop the appropriate program. Most of the main OFET parameters included in the IEEE 1620 standard can be measured by means of this device. Although nowadays expensive devices for the characterization of Si-based transistors are available, devices for the characterization of organic transistors are not yet widespread in the market. Fabrication of a specific and flexible module that can be used to characterize this type of transistors would provide a powerful tool to researchers.

  11. Evolution of the MOS transistor - From conception to VLSI

    International Nuclear Information System (INIS)

    Sah, C.T.


    Historical developments of the metal-oxide-semiconductor field-effect-transistor (MOSFET) during the last sixty years are reviewed, from the 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triodes structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which led to the laboratory demonstration of the modern silicon MOSFET thirty years later in 1960. A survey is then made of the milestones of the past thirty years leading to the latest submicron silicon logic CMOS (Complementary MOS) and BICMOS (Bipolar-Junction-Transistor CMOS combined) arrays and the three-dimensional and ferroelectric extensions of Dennard's one-transistor dynamic random access memory (DRAM) cell. Status of the submicron lithographic technologies (deep ultra-violet light, X-ray, electron-beam) are summarized. Future trends of memory cell density and logic gate speed are projected. Comparisons of the switching speed of the silicon MOSFET with that of silicon bipolar and GaAs field-effect transistors are reviewed. Use of high-temperature superconducting wires and GaAs-on-Si monolithic semiconductor optical clocks to break the interconnect-wiring delay barrier is discussed. Further needs in basic research and mathematical modeling on the failure mechanisms in submicron silicon transistors at high electric fields (hot electron effects) and in interconnection conductors at high current densities and low as well as high electric fields (electromigration) are indicated

  12. Charge carrier velocity in graphene field-effect transistors (United States)

    Bonmann, Marlene; Vorobiev, Andrei; Andersson, Michael A.; Stake, Jan


    To extend the frequency range of transistors into the terahertz domain, new transistor technologies, materials, and device concepts must be continuously developed. The quality of the interface between the involved materials is a highly critical factor. The presence of impurities can degrade device performance and reliability. In this paper, we present a method that allows the study of the charge carrier velocity in a field-effect transistor vs impurity levels. The charge carrier velocity is found using high-frequency scattering parameter measurements followed by delay time analysis. The limiting factors of the saturation velocity and the effect of impurities are then analysed by applying analytical models of the field-dependent and phonon-limited carrier velocity. As an example, this method is applied to a top-gated graphene field-effect transistor (GFET). We find that the extracted saturation velocity is ca. 1.4 ×107 cm/s and is mainly limited by silicon oxide substrate phonons. Within the considered range of residual charge carrier concentrations, charged impurities do not limit the saturation velocity directly by the phonon mechanism. Instead, the impurities act as traps that emit charge carriers at high fields, preventing the current from saturation and thus limiting power gain of the GFETs. The method described in this work helps to better understand the influence of impurities and clarifies methods of further transistor development. High quality interfaces are required to achieve current saturation via velocity saturation in GFETs.

  13. Photo-induced locomotion of chemo-responsive polymer gels (United States)

    Dayal, Pratyush; Kuksenok, Olga; Balazs, Anna C.


    The need to translate chemical energy into a mechanical response, a characteristic of many biological processes, has motivated the study of stimuli-responsive polymer gels. Recently, it has been shown experimentally that by coupling the mechanical properties of the gel with the Belousov-Zhabotinsky (BZ) reaction it is possible to induce self-sustained oscillations in the gel. One of the means for controlling these chemical oscillations is using light as an external stimulus. To study the effect of light on the mechanical behavior of the gel, we use our recently developed a 3D gel lattice spring model (gLSM) which couples the BZ reaction kinetics to the gel dynamics. In this model, the polymer-solvent interactions were taken into account by adding a coupling term to the Flory-Huggins free energy. By virtue of this coupling term, the swelling---de-swelling behavior of the gel was captured in 3D. In order to include the effect of the polymer on the reaction kinetics, the Oregonator model for the photo-sensitive BZ reaction was also modified. Using gLSM model, we probed the effect of non-uniform light irradiation on the gel dynamics. We were able to manipulate the direction and velocity of locomotion of the gel using light as a control parameter. This ability to control the movement of the gel can be utilized in a variety of applications, ranging from bio-actuators to controlled drug release systems.

  14. Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb

    KAUST Repository

    Zhang, Qingyun


    Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer As and AsSb. While the pristine monolayers are semiconductors (direct band gap at the Γ point), fluorination results in Dirac cones at the K points. Fluorinated monolayer As shows a band gap of 0.16 eV due to spin-orbit coupling, and fluorinated monolayer AsSb a larger band gap of 0.37 eV due to inversion symmetry breaking. Spin-orbit coupling induces spin splitting similar to monolayer MoS2. Phonon calculations confirm that both materials are dynamically stable. Calculations of the edge states of nanoribbons by the tight-binding method demonstrate that fluorinated monolayer As is topologically nontrivial in contrast to fluorinated monolayer AsSb.

  15. Structural, electronic and magnetic properties of Au-based monolayer derivatives in honeycomb structure

    Energy Technology Data Exchange (ETDEWEB)

    Kapoor, Pooja, E-mail:; Sharma, Munish; Ahluwalia, P. K. [Physics Department, Himachal Pradesh University, Shimla, Himachal Pradesh, India 171005 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India, 151001 (India)


    We present electronic properties of atomic layer of Au, Au{sub 2}-N, Au{sub 2}-O and Au{sub 2}-F in graphene-like structure within the framework of density functional theory (DFT). The lattice constant of derived monolayers are found to be higher than the pristine Au monolayer. Au monolayer is metallic in nature with quantum ballistic conductance calculated as 4G{sub 0}. Similarly, Au{sub 2}-N and Au{sub 2}-F monolayers show 4G{sub 0} and 2G{sub 0} quantum conductance respectively while semiconducting nature with calculated band gap of 0.28 eV has been observed for Au{sub 2}-O monolayer. Most interestingly, half metalicity has been predicted for Au{sub 2}-N and Au{sub 2}-F monolayers. Our findings may have importance for the application of these monolayers in nanoelectronic and spintronics.

  16. Theoretical values of various parameters in the Gummel-Poon model of a bipolar junction transistor (United States)

    Benumof, R.; Zoutendyk, J.


    Various parameters in the Gummel-Poon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. A consistent theoretical approach is used which facilitates an understanding of the foundations and limitations of the derived formulas. The results enable one to predict how changes in the geometry and composition of a transistor would affect performance.

  17. Investigation of Impact of the Gate Circuitry on IGBT Transistor Dynamic Parameters

    Directory of Open Access Journals (Sweden)

    Vytautas Bleizgys


    Full Text Available The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.Article in Lithuanian

  18. Fermilab main accelerator quadrupole transistorized regulators for improved tune stability

    International Nuclear Information System (INIS)

    Yarema, R.J.; Pfeffer, H.


    During early operation of the Fermilab Main Accelerator, tune fluctuations, caused by the SCR-controlled power supplies in the quad bus, limited the beam aperature at low energies. To correct this problem, two transistorized power supplies were built in 1975 to regulate and filter the main ring quad magnet current during injection and beam acceleration through the rf transistion region. There is one power supply in series with each quad bus. Each supply uses 320 parallel power transistors and is rated at 300A, 120V. Since the voltage and current capabilities of the transistorized supplies are limited, the supplies are turned-off at about 25GeV. A real-time computer system initiates turn-on of the SCR-controlled power supplies and regulation takeover by the SCR-controlled supplies, at the appropriate times

  19. Nanowire transistors physics of devices and materials in one dimension

    CERN Document Server

    Colinge, Jean-Pierre


    From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in ...

  20. Transistorized PWM inverter-induction motor drive system (United States)

    Peak, S. C.; Plunkett, A. B.


    This paper describes the development of a transistorized PWM inverter-induction motor traction drive system. A vehicle performance analysis was performed to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of inverter and motor specifications. The inverter was a transistorized three-phase bridge using General Electric power Darlington transistors. The description of the design and development of this inverter is the principal object of this paper. The high-speed induction motor is a design which is optimized for use with an inverter power source. The primary feedback control is a torque angle control with voltage and torque outer loop controls. A current-controlled PWM technique is used to control the motor voltage. The drive has a constant torque output with PWM operation to base motor speed and a constant horsepower output with square wave operation to maximum speed. The drive system was dynamometer tested and the results are presented.

  1. Planar transistors and impatt diodes with ion implantation

    International Nuclear Information System (INIS)

    Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.


    Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

  2. Fully printed metabolite sensor using organic electrochemical transistor (United States)

    Scheiblin, Gaëtan; Aliane, Abdelkader; Coppard, Romain; Owens, Róisín. M.; Mailley, Pascal; Malliaras, George G.


    As conducting polymer based devices, organic electrochemical transistors (OECTs) are suited for printing process. The convenience of the screen-printing techniques allowed us to design and fabricate OECTs with a selected design and using different gate material. Depending on the material used, we were able to tune the transistor for different biological application. Ag/AgCl gate provided transistor with good transconductance, and electrochemical sensitivity to pH was provided by polyaniline ink. Finally, we validate the enzymatic sensing of glucose and lactate with a Poly(3,4-ethylene dioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) gate often used due to its biocompatible properties. The screen-printing process allowed us to fabricate a large amount of devices in a short period of time, using only commercially available grades of ink, showing by this way the possible transfer to industrial purpose.

  3. Quantum engineering of transistors based on 2D materials heterostructures (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca


    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  4. Vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi


    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.

  5. Modeling and PSPICE simulation of NBTI effects in VDMOS transistors

    Directory of Open Access Journals (Sweden)

    Marjanović Miloš


    Full Text Available In this paper the results of modeling and simulation of NBTI effects in p-channel power VDMOS transistor have been presented. Based on the experimental results, the threshold voltage shifts and changes of transconductance during the NBT stress have been modeled and implemented in the PSPICE model of the IRF9520 transistor. By predefining the threshold voltage value before the NBT stress, and by assigning the stress time, transfer characteristics of the transistor are simulated. These characteristics are within (1.33÷11.25% limits in respect to the measured ones, which represents a good agreement. [Projekat Ministarstva nauke Republike Srbije, br. OI 171026 i br. TR 32026

  6. Transistor and memory devices based on novel organic and biomaterials (United States)

    Tseng, Jia-Hung

    Organic semiconductor devices have aroused considerable interest because of the enormous potential in many technological applications. Organic electroluminescent devices have been extensively applied in display technology. Rapid progress has also been made in transistor and memory devices. This thesis considers aspects of the transistor based on novel organic single crystals and memory devices using hybrid nanocomposites comprising polymeric/inorganic nanoparticles, and biomolecule/quantum dots. Organic single crystals represent highly ordered structures with much less imperfections compared to amorphous thin films for probing the intrinsic charge transport in transistor devices. We demonstrate that free-standing, thin organic single crystals with natural flexing ability can be fabricated as flexible transistors. We study the surface properties of the organic crystals to determine a nearly perfect surface leading to high performance transistors. The flexible transistors can maintain high performance under reversible bending conditions. Because of the high quality crystal technique, we further develop applications on organic complementary circuits and organic single crystal photovoltaics. In the second part, two aspects of memory devices are studied. We examine the charge transfer process between conjugated polymers and metal nanoparticles. This charge transfer process is essential for the conductance switching in nanoseconds to induce the memory effect. Under the reduction condition, the charge transfer process is eliminated as well as the memory effect, raising the importance of coupling between conjugated systems and nanoparticle accepters. The other aspect of memory devices focuses on the interaction of virus biomolecules with quantum dots or metal nanoparticles in the devices. We investigate the impact of memory function on the hybrid bio-inorganic system. We perform an experimental analysis of the charge storage activation energy in tobacco mosaic virus with

  7. Surface investigation of chitosan film with fatty acid monolayers

    Directory of Open Access Journals (Sweden)

    Esam A. El-hefian


    Full Text Available The surface pressure- molecular area (-A isotherm curves of two fatty acids of different chain lengths, i.e. stearic (C18 and arachidic (C20 acids, were obtained by using Langmuir-Blodgett (LB technique. Results showed clear isotherm plots with limiting mean molecular area around 21 Å2 for both acids. However, the monolayer was found to collapse at higher than 33 mN m-1 and 21 mN m-1 for stearic acid and arachidic acid respectively. The effect of Langmuir-Blodgett monolayers of the acids was investigated by atomic force microscopy (AFM. Chitosan film, before and after dipping in water, was also studied by means of AFM so that it could be used for comparison. It was found that the surface of chitosan was more homogeneous and smoother after dipping in water. In addition, more homogeneous surfaces were achieved after transferring a layer of the fatty acid onto the substrate.

  8. MgO monolayer epitaxy on Ni (100) (United States)

    Sarpi, B.; Putero, M.; Hemeryck, A.; Vizzini, S.


    The growth of two-dimensional oxide films with accurate control of their structural and electronic properties is considered challenging for engineering nanotechnological applications. We address here the particular case of MgO ultrathin films grown on Ni (100), a system for which neither crystallization nor extended surface ordering has been established previously in the monolayer range. Using Scanning Tunneling Microscopy and Auger Electron Spectroscopy, we report on experiments showing MgO monolayer (ML) epitaxy on a ferromagnetic nickel surface, down to the limit of atomic thickness. Alternate steps of Mg ML deposition, O2 gas exposure, and ultrahigh vacuum thermal treatment enable the production of a textured film of ordered MgO nano-domains. This study could open interesting prospects for controlled epitaxy of ultrathin oxide films with a high magneto-resistance ratio on ferromagnetic substrates, enabling improvement in high-efficiency spintronics and magnetic tunnel junction devices.

  9. Microculture system for studying monolayers of functional beta-cells. (United States)

    Dobersen, M J; Scharff, J E; Notkins, A L


    A method is described for growing monolayers of newborn rat beta-cells in microculture trays. After disruption of the pancreas with collagenase, islets were isolated by Ficoll density gradient centrifugation, trypsinized to obtain individual cells, and plated in 96-well tissue culture trays. The cells were incubated for the first 3 days in growth medium containing 0.1 mM 3-isobutyl-1-methylxanthine to promote monolayer formation. The cultures could be maintained in a functional state, as defined by their responsiveness to known modulators of insulin secretion, for at least 2 weeks. As few as 1 X 10(3) islet cells/well gave results that were reproducible within +/- 10%. It is suggested that the microculture system for islet cells might prove to be a rapid and reproducible screening technique for studying drugs, viruses, or other agents that affect beta-cell function.

  10. Valley-selective optical Stark effect in monolayer WS2 (United States)

    Gedik, Nuh

    Monolayer semiconducting transition-metal dichalcogenides (TMDs) have a pair of valleys that, by time-reversal symmetry, are energetically degenerate. Lifting the valley degeneracy in these materials is of great interest because it would allow for valley specific band engineering and offer additional control in valleytronic applications. In this talk, I will show that circularly polarized light, which breaks time-reversal symmetry, can be used to lift the valley degeneracy by means of the optical Stark effect. We demonstrate that this effect is capable of raising the exciton level in monolayer TMD WS2 by as much as 18 meV in a controllable valley-selective manner. The resulting energy shift is extremely large, comparable to the shift that would be obtained using a very high magnetic field (approximately 100 Tesla). These results offer a novel way to control valley degree of freedom, and may provide a means to realize new valley-selective Floquet topological state of matter.

  11. Neutron Reflectivity Measurement for Polymer Dynamics near Graphene Oxide Monolayers (United States)

    Koo, Jaseung

    We investigated the diffusion dynamics of polymer chains confined between graphene oxide layers using neutron reflectivity (NR). The bilayers of polymethylmetacrylate (PMMA)/ deuterated PMMA (d-PMMA) films and polystyrene (PS)/d-PS films with various film thickness sandwiched between Langmuir-Blodgett (LB) monolayers of graphene oxide (GO) were prepared. From the NR results, we found that PMMA diffusion dynamics was reduced near the GO surface while the PS diffusion was not significantly changed. This is due to the different strength of GO-polymer interaction. In this talk, these diffusion results will be compared with dewetting dynamics of polymer thin films on the GO monolayers. This has given us the basis for development of graphene-based nanoelectronics with high efficiency, such as heterojunction devices for polymer photovoltaic (OPV) applications.

  12. Monolayers and mixed-layers on copper towards corrosion protection

    Energy Technology Data Exchange (ETDEWEB)

    Sinapi, F. [Fonds pour la Formation a la Recherche dans l' Industrie et dans l' Agriculture, Rue d' Egmont 5, B-1000 Brussels (Belgium); Julien, S.; Auguste, D.; Hevesi, L.; Delhalle, J. [Laboratory of Chemistry and Electrochemistry of Surfaces, University of Namur, FUNDP, Rue de Bruxelles, 61, B-5000 Namur (Belgium); Mekhalif, Z. [Laboratory of Chemistry and Electrochemistry of Surfaces, University of Namur, FUNDP, Rue de Bruxelles, 61, B-5000 Namur (Belgium)], E-mail:


    In order to improve the protection abilities of (3-mercaptopropy)trimethoxysilane (MPTS) self-assembled monolayers on copper surfaces, mixed monolayers have been formed successfully by successive immersions in MPTS and in n-dodecanethiol (DT). A newly synthesised molecule, (11-mercaptoundecyl)trimethoxysilane (MUTS), has also been employed to form a thicker organic film on copper surfaces and, thereby, enhance the inhibitory action of the coating. The grafting has been confirmed by X-ray photoelectron spectroscopy (XPS), polarization modulation infrared reflection adsorption spectroscopy (PM-IRRAS) and water contact angle. The protective efficiency of each protective organic film has been evidenced by cyclic voltammetry (CV) and polarization curve measurements (CP). It was shown that the MUTS and unhydrolyzed MPTS/DT films exhibited significant corrosion protection properties.

  13. Defective interfering particles in monolayer-propagated Newcastle disease virus

    International Nuclear Information System (INIS)

    Roman, J.M.; Simon, E.H.


    Newcastle disease virus (NDV) serially passaged in chick embryo fibroblasts (M-NDV) gives rise to defective interfering (NDV-DI) particles, while NDV passaged in embryonated eggs (E-NDV) does not. Co-infection with these particles and infectious virions results in a 99 percent reduction in yield. Interference is not due to interferon or to prevention of absorption of infectious virions and is specific for NDV. The particles mediating interference sediment at the same velocity as infectious virions. The accumulation of NDV-DI particles in monolayers but not in eggs may be a consequence of the fact that M-NDV virions are larger and probably contain more RNA, or it may reflect differences in NDV replicative processes in eggs and monolayers, or both

  14. Functional Molecular Junctions Derived from Double Self-Assembled Monolayers. (United States)

    Seo, Sohyeon; Hwang, Eunhee; Cho, Yunhee; Lee, Junghyun; Lee, Hyoyoung


    Information processing using molecular junctions is becoming more important as devices are miniaturized to the nanoscale. Herein, we report functional molecular junctions derived from double self-assembled monolayers (SAMs) intercalated between soft graphene electrodes. Newly assembled molecular junctions are fabricated by placing a molecular SAM/(top) electrode on another molecular SAM/(bottom) electrode by using a contact-assembly technique. Double SAMs can provide tunneling conjugation across the van der Waals gap between the terminals of each monolayer and exhibit new electrical functions. Robust contact-assembled molecular junctions can act as platforms for the development of equivalent contact molecular junctions between top and bottom electrodes, which can be applied independently to different kinds of molecules to enhance either the structural complexity or the assembly properties of molecules. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Point defect weakened thermal contraction in monolayer graphene. (United States)

    Zha, Xian-Hu; Zhang, Rui-Qin; Lin, Zijing


    We investigate the thermal expansion behaviors of monolayer graphene and three configurations of graphene with point defects, namely the replacement of one carbon atom with a boron or nitrogen atom, or of two neighboring carbon atoms by boron-nitrogen atoms, based on calculations using first-principles density functional theory. It is found that the thermal contraction of monolayer graphene is significantly decreased by point defects. Moreover, the corresponding temperature for negative linear thermal expansion coefficient with the maximum absolute value is reduced. The cause is determined to be point defects that enhance the mechanical strength of graphene and then reduce the amplitude and phonon frequency of the out-of-plane acoustic vibration mode. Such defect weakening of graphene thermal contraction will be useful in nanotechnology to diminish the mismatching or strain between the graphene and its substrate.


    Energy Technology Data Exchange (ETDEWEB)



    The remarkable catalytic properties of electrode surfaces modified by monolayer amounts of metal adatoms obtained by underpotential deposition (UPD) have been the subject of a large number of studies during the last couple of decades. This interest stems from the possibility of implementing strictly surface modifications of electrocatalysts in an elegant, well-controlled way, and these bi-metallic surfaces can serve as models for the design of new catalysts. In addition, some of these systems may have potential for practical applications. The UPD of metals, which in general involves the deposition of up to a monolayer of metal on a foreign substrate at potentials positive to the reversible thermodynamic potential, facilitates this type of surface modification, which can be performed repeatedly by potential control. Recent studies of these surfaces and their catalytic properties by new in situ surface structure sensitive techniques have greatly improved the understanding of these systems.

  17. Mixed multilayered vertical heterostructures utilizing strained monolayer WS2 (United States)

    Sheng, Yuewen; Xu, Wenshuo; Wang, Xiaochen; He, Zhengyu; Rong, Youmin; Warner, Jamie H.


    Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by CVD directly on Si substrates with SiO2 surface are easily washed off by water and this makes aqueous based transfer methods challenging for creating vertical stacks on the growth substrate. 2D hexagonal Boron Nitride films are used to provide an insulating layer that limits interactions with a top graphene layer and preserve the strong photoluminescence from the WS2. This transfer method is suitable for layer by layer control of 2D material vertical stacks and is shown to be possible for all CVD grown samples, which opens up pathways for the rapid large scale fabrication of vertical heterostructure systems with atomic thickness depth control and large area coverage.Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by

  18. Influence of calcium on ceramide-1-phosphate monolayers

    Directory of Open Access Journals (Sweden)

    Joana S. L. Oliveira


    Full Text Available Ceramide-1-phosphate (C1P plays an important role in several biological processes, being identified as a key regulator of many protein functions. For instance, it acts as a mediator of inflammatory responses. The mediation of the inflammation process happens due to the interaction of C1P with the C2 domain of cPLA2α, an effector protein that needs the presence of submicromolar concentrations of calcium ions. The aim of this study was to determine the phase behaviour and structural properties of C1P in the presence and absence of millimolar quantities of calcium in a well-defined pH environment. For that purpose, we used monomolecular films of C1P at the soft air/liquid interface with calcium ions in the subphase. The pH was varied to change the protonation degree of the C1P head group. We used surface pressure versus molecular area isotherms coupled with other monolayer techniques as Brewster angle microscopy (BAM, infrared reflection–absorption spectroscopy (IRRAS and grazing incidence X-ray diffraction (GIXD. The isotherms indicate that C1P monolayers are in a condensed state in the presence of calcium ions, regardless of the pH. At higher pH without calcium ions, the monolayer is in a liquid-expanded state due to repulsion between the negatively charged phosphate groups of the C1P molecules. When divalent calcium ions are added, they are able to bridge the highly charged phosphate groups, enhancing the regular arrangement of the head groups. Similar solidification of the monolayer structure can be seen in the presence of a 150 times larger concentration of monovalent sodium ions. Therefore, calcium ions have clearly a strong affinity for the phosphomonoester of C1P.

  19. Superior Gas Sensing Properties of Monolayer PtSe2

    KAUST Repository

    Sajjad, Muhammad


    First-principles calculations of the structural and electronic properties of monolayer 1T-PtSe2 with adsorbed (a) NO2, (b) NO, (c) NH3, (d) H2O, (e) CO2, and (f) CO molecules are discussed. The results point to great potential of the material in gas sensor applications. Superior sensitivity is demonstrated by transport calculations using the nonequilibrium Green\\'s function method.

  20. Shadow-mask evaporation through monolayer-modified nanostencils


    Kolbel, M; Tjerkstra, RW; Brugger, J; van Rijn, CJM; Nijdam, W; Huskens, J; Reinhoudt, DN


    Gradual clogging of the apertures of nanostencils used as miniature shadow masks in metal evaporations can be reduced by coating the stencil with self-assembled monolayers (SAM). This is quantified by the dimensions (height and volume) of gold features obtained by nanostencil evaporation as measured by scanning electron microscopy (SEM) and atomic force microscopy (AFM). An increase in material deposition through the apertures by more than 100% can be achieved with SAM-coated stencils, which ...

  1. UV-Induced Reaction Kinetics of Dilinoleoylphosphatidylethanolamine Monolayers


    Viitala, Tapani; Peltonen, Jouko


    The UV-induced reactivity of dilinoleoylphosphatidylethanolamine (DLiPE) Langmuir and Langmuir-Blodgett films has been studied by in situ measurements of the changes in the mean molecular area, UV-vis and Fourier transform infrared spectroscopy, and atomic force microscopy (AFM). Optimum orientation and packing density of the DLiPE molecules in the monolayer were achieved by adding uranyl acetate to the subphase. A first-order reaction kinetic model was successfully fitted to the experimental...

  2. In situ Raman spectroelectrochemistry of azobenzene monolayers on glassy carbon. (United States)

    Itoh, Takashi; McCreery, Richard L


    In situ Raman spectra of chemisorbed azobenzene (AB) monolayers on glassy carbon (GC) electrodes were observed under potentiostatic conditions in acetonitrile (ACN) with tetrabutyl-ammonium tetrafluoroborate (TBA-BF4). The Raman intensities of these spectra were high below -1000 mV, and this is attributed to the change in absorbance of AB on GC. In this paper, we describe chemisorbed AB molecules on GC electrode surfaces under potentiostatic conditions.

  3. Vanadium oxide monolayer catalysts. I. Preparation, characterization, and thermal stability

    NARCIS (Netherlands)

    Roozeboom, F.; Fransen, T.; Mars, P.; Gellings, P.J.


    Vanadium oxide catalysts of the monolayer type have been prepared by means of chemisorption of vanadate(V)-anions from aqueous solutions and by chemisorption of gaseous V2O3(OH)4. Using Al2O3, Cr2O3, TiO2, CeO2 and ZrO2, catalysts with an approximately complete monomolecular layer of vanadium(V)

  4. Assembly of citrate gold nanoparticles on hydrophilic monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Vikholm-Lundin, Inger, E-mail: [University of Tampere, BioMediTech, Tampere (Finland); Fimlab Laboratories Ltd., Tampere (Finland); Rosqvist, Emil; Ihalainen, Petri [Abo Akademi University, Center for Functional Materials, Laboratory of Physical Chemistry (Finland); Munter, Tony [VTT Technical Research Centre of Finland, Process Chemistry end Environmental Engineering, Tampere (Finland); Honkimaa, Anni [University of Tampere, Department of Virology, School of Medicine, Tampere (Finland); Marjomäki, Varpu [University of Jyväskylä, Department of Biological and Environmental Science, Nanoscience Center, Jyväskylä (Finland); Albers, Willem M. [BioNavis Oy Ltd., Ylöjärvi, Tampere (Finland); Peltonen, Jouko [Abo Akademi University, Center for Functional Materials, Laboratory of Physical Chemistry (Finland)


    Highlights: • The self-assembled layers were all hydrophilic with Lipa-pTHMMAA exhibiting close to full wetting. • The polyacrylamide layers smoothen the gold surface to a higher extent than the polyethylene glycol and lipoic acid terminated with an amino group. • SPR resonance curves shift to higher angles and become increasingly damped when large nanoparticles assembled on the surface. • Topographical images confirmed that the highest number of particles were assembled on the polyethylene glycol monolayer. • By increasing the interaction time more particles could be assembled on the surface. - Abstract: Self-assembled monolayers (SAMs) as model surfaces were linked onto planar gold films thorough lipoic acid or disulfide groups. The molecules used were polyethylene glycol (EG-S-S), N-[tris-(hydroxymethyl)methyl]acrylamide polymers with and without lipoic acid (Lipa-pTHMMAA and pTHMMAA) and a lipoic acid triazine derivative (Lipa-MF). All the layers, but Lipa-MF with a primary amino group were hydroxyl terminated. The layers were characterized by contact angle measurements and atomic force microscopy, AFM. Citrate stabilized nanoparticles, AuNPs in water and phosphate buffer were allowed to assemble on the layers for 10 min and the binding was followed in real-time with surface plasmon resonance, SPR. The SPR resonance curves were observed to shift to higher angles and become increasingly damped, while also the peaks strongly broaden when large nanoparticles assembled on the surface. Both the angular shift and the damping of the curve was largest for nanoparticles assembling on the EG-S-S monolayer. High amounts of particles were also assembled on the pTHMMAA layer without the lipoic acid group, but the damping of the curve was considerably lower with a more even distribution of the particles. Topographical images confirmed that the highest number of particles were assembled on the polyethylene glycol monolayer. By increasing the interaction time more

  5. Properties of thiolate monolayers formed on different amalgam electrodes

    Czech Academy of Sciences Publication Activity Database

    Josypčuk, Bohdan; Mareček, Vladimír


    Roč. 653, 1-2 (2011), s. 7-13 ISSN 1572-6657 R&D Projects: GA AV ČR IAA400400806; GA ČR GAP206/11/1638; GA MŠk(CZ) LC06063 Institutional research plan: CEZ:AV0Z40400503 Keywords : thiolate monolayer * reductive desorption * charge effect Subject RIV: CG - Electrochemistry Impact factor: 2.905, year: 2011

  6. Series resistance in different operation regime of junctionless transistors (United States)

    Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gérard


    Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.

  7. Recent progress in photoactive organic field-effect transistors


    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok


    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These ar...

  8. Transistor device for multi-bit non-volatile storage

    International Nuclear Information System (INIS)

    Tan, S.G.; Jalil, M.B.A.; Kumar, Vimal; Liew, Thomas; Teo, K.L.; Chong, T.C.


    We propose a transistor model that incorporates multiple storage elements within a single transistor device. This device is thus smaller in size compared to the magnetoresistive random access memory (MRAM) with the same number of storage bits. The device model can function in both the current as well as voltage detection mode. Simulations were carried out at higher temperature, taking into consideration the spread of electron density above the Fermi level. We found that linear detection of conductance variation with the stored binary value can be achieved for a 3-bit storage device up to a temperature of 350 K

  9. All diamond self-aligned thin film transistor (United States)

    Gerbi, Jennifer [Champaign, IL


    A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

  10. Nanophotonic quantum computer based on atomic quantum transistor

    International Nuclear Information System (INIS)

    Andrianov, S N; Moiseev, S A


    We propose a scheme of a quantum computer based on nanophotonic elements: two buses in the form of nanowaveguide resonators, two nanosized units of multiatom multiqubit quantum memory and a set of nanoprocessors in the form of photonic quantum transistors, each containing a pair of nanowaveguide ring resonators coupled via a quantum dot. The operation modes of nanoprocessor photonic quantum transistors are theoretically studied and the execution of main logical operations by means of them is demonstrated. We also discuss the prospects of the proposed nanophotonic quantum computer for operating in high-speed optical fibre networks. (quantum computations)

  11. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    Energy Technology Data Exchange (ETDEWEB)

    Betz, A. C., E-mail:; Broström, M.; Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tagliaferri, M. L. V. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Universit di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Vinet, M. [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France); Sanquer, M. [SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France); Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)


    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  12. Single-dopant resonance in a single-electron transistor (United States)

    Golovach, V. N.; Jehl, X.; Houzet, M.; Pierre, M.; Roche, B.; Sanquer, M.; Glazman, L. I.


    Single dopants in semiconductor nanostructures have been studied in great detail recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report the coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate-equation theory developed in parallel with the experiment.

  13. Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls


    Sylvia, Somaia Sarwat


    The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling cu...

  14. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    International Nuclear Information System (INIS)

    Betz, A. C.; Broström, M.; Gonzalez-Zalba, M. F.; Tagliaferri, M. L. V.; Vinet, M.; Sanquer, M.; Ferguson, A. J.


    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  15. Characterization of a Common-Source Amplifier Using Ferroelectric Transistors (United States)

    Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.


    This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

  16. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper


    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz shielding including resistive coaxial lines, that prevents spurious electromagnetic radiation and especially high energy......, we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...

  17. Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor. (United States)

    Kim, Yo-Han; Lee, Eun Yeol; Lee, Hyun Ho; Seo, Tae Seok


    Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 10 1 and mobility of 5.005 cm 2 /V·s. For the memory capacitor, the flat-band voltage shift (ΔV FB ) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔV th ) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

  18. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor (United States)

    Shin, Hyun Wook; Son, Jong Yeog


    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  19. Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers (United States)


    junction transistor ( BJT ) which is completely free of ion implantation and hence is free of the implantation- induced crystal damages and high-temperature...Index Terms—Silicon carbide, bipolar junction transistors ( BJTs ), power transistors ...Std Z39-18 I. INTRODUCTION 4H-SiC bipolar junction transistor ( BJT ) is an important switching device for high power and high temperature

  20. Self assembly of highly-ordered nanoparticle monolayers.

    Energy Technology Data Exchange (ETDEWEB)

    Bigioni, T. P.; Lin, X.-M.; Nguyen, T. T.; Corwin, E. I.; Witten, T. A.; Jaeger, H. M.; Univ. of Chicago


    When a drop of a colloidal solution of nanoparticles dries on a surface, it leaves behind coffee-stain-like rings of material with lace-like patterns or clumps of particles in the interior. These non-uniform mass distributions are manifestations of far-from-equilibrium effects, such as fluid flows and solvent fluctuations during late-stage drying. However, recently a strikingly different drying regime promising highly uniform, long-range-ordered nanocrystal monolayers has been found. Here we make direct, real-time and real-space observations of nanocrystal self-assembly to reveal the mechanism. We show how the morphology of drop-deposited nanoparticle films is controlled by evaporation kinetics and particle interactions with the liquid-air interface. In the presence of an attractive particle-interface interaction, rapid early-stage evaporation dynamically produces a two-dimensional solution of nanoparticles at the liquid-air interface, from which nanoparticle islands nucleate and grow. This self-assembly mechanism produces monolayers with exceptional long-range ordering that are compact over macroscopic areas, despite the far-from-equilibrium evaporation process. This new drop-drying regime is simple, robust and scalable, is insensitive to the substrate material and topography, and has a strong preference for forming monolayer films. As such, it stands out as an excellent candidate for the fabrication of technologically important ultra thin film materials for sensors, optical devices and magnetic storage media.

  1. A trough for improved SFG spectroscopy of lipid monolayers (United States)

    Franz, Johannes; van Zadel, Marc-Jan; Weidner, Tobias


    Lipid monolayers are indispensable model systems for biological membranes. The main advantage over bilayer model systems is that the surface pressure within the layer can be directly and reliably controlled. The sensitive interplay between surface pressure and temperature determines the molecular order within a model membrane and consequently determines the membrane phase behavior. The lipid phase is of crucial importance for a range of membrane functions such as protein interactions and membrane permeability. A very reliable method to probe the structure of lipid monolayers is sum frequency generation (SFG) vibrational spectroscopy. Not only is SFG extremely surface sensitive but it can also directly access critical parameters such as lipid order and orientation, and it can provide valuable information about protein interactions along with interfacial hydration. However, recent studies have shown that temperature gradients caused by high power laser beams perturb the lipid layers and potentially obscure the spectroscopic results. Here we demonstrate how the local heating problem can be effectively reduced by spatially distributing the laser pulses on the sample surface using a translating Langmuir trough for SFG experiments at lipid monolayers. The efficiency of the trough is illustrated by the detection of enhanced molecular order due to reduced heat load.

  2. Strain engineering on transmission carriers of monolayer phosphorene (United States)

    Zhang, Wei; Li, Feng; Hu, Junsong; Zhang, Ping; Yin, Jiuren; Tang, Xianqiong; Jiang, Yong; Wu, Bozhao; Ding, Yanhuai


    The effects of uniaxial strain on the structure, band gap and transmission carriers of monolayer phosphorene were investigated by first-principles calculations. The strain induced semiconductor-metal as well as direct–indirect transitions were studied in monolayer phosphorene. The position of CBM which belonged to indirect gap shifts along the direction of the applied strain. We have concluded the change rules of the carrier effective mass when plane strains are applied. In band structure, the sudden decrease of band gap or the new formation of CBM (VBM) causes the unexpected change in carrier effective mass. The effects of zigzag and armchair strain on the effective electron mass in phosphorene are different. The strain along zigzag direction has effects on the electrons effective mass along both zigzag and armchair direction. By contrast, armchair-direction strain seems to affect only on the free electron mass along zigzag direction. For the holes, the effective masses along zigzag direction are largely affected by plane strains while the effective mass along armchair direction exhibits independence in strain processing. The carrier density of monolayer phosphorene at 300 K is calculated about 1.25× {{10}6} cm‑2, which is greatly influenced by the temperature and strain. Strain engineering is an efficient method to improve the carrier density in phosphorene.

  3. Simulation of a lipid monolayer using molecular dynamics (United States)

    Kox, A. J.; Michels, J. P. J.; Wiegel, F. W.


    Numerical simulation is often a useful tool f or investigating the behaviour of complex systems with many degrees of freedom. Of the two major methods in this field, the Monte Carlo method and the molecular dynamics method, only the first has been applied to realistic models of lipid monolayers1-5. The term lipid monolayer is used here to describe a class of systems consisting of chain molecules on a liquid substrate, the characteristic properties of which can be summarized as follows. (1) The constituent molecules are amphipathic, that is they consist of a hydrophilic (polar) head group and one or more hydrophobic hydrocarbon chains. (2) Due to the amphipathic character of the molecules, the head groups are constrained to the plane of the substrate, whereas the tails are directed outwards from this plane. (3) The collective properties of the molecules are determined by their short-range repulsive and long-range attractive interactions and by the steric repulsion of the tails. We now present what we believe to be the first molecular dynamics simulation of a realistic model of a lipid monolayer. The model system, which has all three properties enumerated above, shows a first order phase transition from an ordered fluid-like state to a disordered, gas-like state.

  4. Monolayer MoS{sub 2} self-switching diodes

    Energy Technology Data Exchange (ETDEWEB)

    Al-Dirini, Feras, E-mail:; Hossain, Md Sharafat [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Victorian Research Laboratory, National ICT Australia, West Melbourne, Victoria (Australia); Hossain, Faruque M.; Skafidas, Efstratios [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Mohammed, Mahmood A. [Princess Sumaya University for Technology, Amman (Jordan); Nirmalathas, Ampalavanapillai [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Melbourne Networked Society Institute (MNSI), University of Melbourne, Victoria (Australia)


    This paper presents a new molybdenum disulphide (MoS{sub 2}) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS{sub 2} monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS{sub 2} results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

  5. Monolayer MoS2 self-switching diodes

    International Nuclear Information System (INIS)

    Al-Dirini, Feras; Hossain, Md Sharafat; Hossain, Faruque M.; Skafidas, Efstratios; Mohammed, Mahmood A.; Nirmalathas, Ampalavanapillai


    This paper presents a new molybdenum disulphide (MoS 2 ) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS 2 monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS 2 results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70

  6. Lipid monolayers and adsorbed polyelectrolytes with different degrees of polymerization. (United States)

    Ortmann, Thomas; Ahrens, Heiko; Lawrenz, Frank; Gröning, Andreas; Nestler, Peter; Günther, Jens-Uwe; Helm, Christiane A


    Polystyrene sulfonate (PSS) of different molecular weight M(w) is adsorbed to oppositely charged DODAB monolayers from dilute solutions (0.01 mmol/L). PSS adsorbs flatly in a lamellar manner, as is shown by X-ray reflectivity and grazing incidence diffraction (exception: PSS with M(w) below 7 kDa adsorbs flatly disordered to the liquid expanded phase). The surface coverage and the separation of the PSS chains are independent of PSS M(w). On monolayer compression, the surface charge density increases by a factor of 2, and the separation of the PSS chains decreases by the same factor. Isotherms show that on increase of PSS M(w) the transition pressure of the LE/LC (liquid expanded/liquid condensed) phase transition decreases. When the contour length exceeds the persistence length (21 nm), the transition pressure is low and constant. For low-M(w) PSS (<7 kDa) the LE/LC transition of the lipids and the disordered/ordered transition of adsorbed PSS occur simultaneously, leading to a maximum in the contour length dependence of the transition enthalpy. These findings show that lipid monolayers at the air/water interface are a suitable model substrate with adjustable surface charge density to study the equilibrium conformation of adsorbed polyelectrolytes as well as their interactions with a model membrane.

  7. Photo-induced travelling waves in condensed Langmuir monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Tabe, Y [Yokoyama Nano-Structured Liquid Crystal Project, ERATO, Japan Science and Technology Corporation, 5-9-9 Tokodai, Tsukuba, Ibaraki 300-2635, Japan (Japan); Yamamoto, T [Yokoyama Nano-Structured Liquid Crystal Project, ERATO, Japan Science and Technology Corporation, 5-9-9 Tokodai, Tsukuba, Ibaraki 300-2635, Japan (Japan); Yokoyama, H [Yokoyama Nano-Structured Liquid Crystal Project, ERATO, Japan Science and Technology Corporation, 5-9-9 Tokodai, Tsukuba, Ibaraki 300-2635, Japan (Japan)


    We report the detailed properties of photo-induced travelling waves in liquid crystalline Langmuir monolayers composed of azobenzene derivatives. When the monolayer, in which the constituent rodlike molecules are coherently tilted from the layer normal, is weakly illuminated to undergo the trans-cis photo-isomerization, spatio-temporal periodic oscillations of the molecular azimuth begin over the entire excited area and propagate as a two-dimensional orientational wave. The wave formation takes place only when the film is formed at an asymmetric interface with broken up-down symmetry and when the chromophores are continuously excited near the long-wavelength edge of absorption to induce repeated photo-isomerizations between the trans and cis forms. Under proper illumination conditions, Langmuir monolayers composed of a wide variety of azobenzene derivatives have been confirmed to exhibit similar travelling waves with velocity proportional to the excitation power irrespective of the degree of amphiphilicity. The dynamics can be qualitatively explained by the modified reaction-diffusion model proposed by Reigada, Sagues and Mikhailov.

  8. Gold nanoparticles with patterned surface monolayers for nanomedicine: current perspectives. (United States)

    Pengo, Paolo; Şologan, Maria; Pasquato, Lucia; Guida, Filomena; Pacor, Sabrina; Tossi, Alessandro; Stellacci, Francesco; Marson, Domenico; Boccardo, Silvia; Pricl, Sabrina; Posocco, Paola


    Molecular self-assembly is a topic attracting intense scientific interest. Various strategies have been developed for construction of molecular aggregates with rationally designed properties, geometries, and dimensions that promise to provide solutions to both theoretical and practical problems in areas such as drug delivery, medical diagnostics, and biosensors, to name but a few. In this respect, gold nanoparticles covered with self-assembled monolayers presenting nanoscale surface patterns-typically patched, striped or Janus-like domains-represent an emerging field. These systems are particularly intriguing for use in bio-nanotechnology applications, as presence of such monolayers with three-dimensional (3D) morphology provides nanoparticles with surface-dependent properties that, in turn, affect their biological behavior. Comprehensive understanding of the physicochemical interactions occurring at the interface between these versatile nanomaterials and biological systems is therefore crucial to fully exploit their potential. This review aims to explore the current state of development of such patterned, self-assembled monolayer-protected gold nanoparticles, through step-by-step analysis of their conceptual design, synthetic procedures, predicted and determined surface characteristics, interactions with and performance in biological environments, and experimental and computational methods currently employed for their investigation.

  9. Measurement of Exciton Binding Energy of Monolayer WS2 (United States)

    Chen, Xi; Zhu, Bairen; Cui, Xiaodong

    Excitonic effects are prominent in monolayer crystal of transition metal dichalcogenides (TMDCs) because of spatial confinement and reduced Coulomb screening. Here we use linear differential transmission spectroscopy and two-photon photoluminescence excitation spectroscopy (TP-PLE) to measure the exciton binding energy of monolayer WS2. Peaks for excitonic absorptions of the direct gap located at K valley of the Brillouin zone and transitions from multiple points near Γ point of the Brillouin zone, as well as trion side band are shown in the linear absorption spectra of WS2. But there is no gap between distinct excitons and the continuum of the interband transitions. Strong electron-phonon scattering, overlap of excitons around Γ point and the transfer of the oscillator strength from interband continuum to exciton states make it difficult to resolve the electronic interband transition edge even down to 10K. The gap between excited states of the band-edge exciton and the single-particle band is probed by TP-PLE measurements. And the energy difference between 1s exciton and the single-particle gap gives the exciton binding energy of monolayer WS2 to be about 0.71eV. The work is supported by Area of excellency (AoE/P-04/08), CRF of Hong Kong Research Grant Council (HKU9/CRF/13G) and SRT on New Materials of The University of Hong Kong.

  10. Phase diagram of the CF₄ monolayer and bilayer on graphite. (United States)

    Thomas, Petros; Hess, George B


    We report an experimental study of physisorbed monolayers and bilayers of CF4 on graphite using infrared reflection absorption spectroscopy supplemented by ellipsometry. The symmetric C-F stretch mode ν3 near 1283 cm(-1) in the gas is strongly blue shifted in the film by dynamic dipole coupling. This blue shift provides a very sensitive measure of the inter-molecular spacing in the monolayer and, less directly, in the bilayer. We find that important corrections are necessary to the volumetric coverage scales used in previous heat capacity and x-ray diffraction studies of this system. This requires quantitative and some qualitative changes to the previously proposed phase diagram. We find evidence for a new phase transition in the middle of the hexagonal incommensurate region and construct new phase diagrams in both the variables coverage-temperature and chemical potential-temperature. We determine the compressibility and thermal expansion in the low-pressure hexagonal incommensurate phase and values for the entropy change in several phase transitions. Below about 55 K there is evidence of solution of up to 7% of an impurity, most likely CO, in our monolayer but not the bilayer film.

  11. On the choice of a head element for low-noise bipolar transistor amplifier

    International Nuclear Information System (INIS)

    Krasnokutskij, R.N.; Kurchaninov, L.L.; Fedyakin, N.N.; Shuvalov, R.S.


    The measurement results of equivalent noise charge (ENC) for KT382 transistor depending on detector capacity, formation duration and collector current are given. It is shown that the measurement results for this transistor in good agreement with calculations according to the noise model, time-consuming ENC measurements can be replaced by preliminary transistor rejection according to the distributed base resistance, current gain and simple calculations. In applications in the field of nuclear electronics the KT382 transistor enables to attain the same noise parameters as NE578, NE021 transistors (Japan) and it can be recommended for using as a head element of amplifiers

  12. Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs

    CERN Document Server

    Gerardin, S; Cornale, D; Ding, L; Mattiazzo, S; Paccagnella, A; Faccio, F; Michelis, S


    We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample variability due to the exposure. At doses smaller than 1 Mrad( SiO2) variability in pMOSFETs is also practically unaffected, whereas at very high doses-in excess of tens of Mrad( SiO2)-variability in the on-current is enhanced in a way not correlated to pre-rad variability. The phenomenon is likely due to the impact of random dopant fluctuations on total ionizing dose effects.

  13. Subcellular topological effect of particle monolayers on cell shapes and functions. (United States)

    Miura, Manabu; Fujimoto, Keiji


    We studied topological effects of subcellular roughness displayed by a closely packed particle monolayer on adhesion and growth of endothelial cells. Poly(styrene-co-acrylamide) (SA) particles were prepared by soap-free emulsion copolymerization. Particle monolayers were prepared by Langmuir-Blodgett deposition using particles, which were 527 (SA053) and 1270 nm (SA127) in diameter. After 24-h incubation, cells tightly adhered on a tissue culture polystyrene dish and randomly spread. On the other hand, cells attached on particle monolayers were stretched into a narrow stalk-like shape. Lamellipodia spread from the leading edge of cells attached on SA053 monolayer to the top of the particles and gradually gathered to form clusters. This shows that cell-cell adhesion became stronger than cell-substrate interaction. Cells attached to SA127 monolayer extended to the reverse side of a particle monolayer and engulfed particles. They remained immobile without migration 24h after incubation. This shows that the inhibition of extensions on SA127 monolayer could inhibit cell migration and cell proliferation. Cell growth on the particle monolayers was suppressed compared with a flat TCPS dish. The number of cells on SA053 gradually increased, whereas that on SA127 decreased with time. When the cell seeding density was increased to 200,000 cells cm(-2), some adherent cells gradually became into contact with adjacent cells. F-actin condensations were formed at the frame of adherent cells and the thin filaments grew from the edges to connect each other with time. For the cell culture on SA053 monolayer, elongated cells showed a little alignment. Cells showed not arrangement of actin stress fibers but F-actin condensation at the contact regions with neighboring cells. Interestingly, the formed cell monolayer could be readily peeled from the particle monolayer. These results indicate that endothelial cells could recognize the surface roughness displayed by particle monolayers and

  14. Monolayer arrangement of fatty hydroxystearic acids on graphite: Influence of hydroxyl groups

    Energy Technology Data Exchange (ETDEWEB)

    Medina, S. [Laboratorio de Rayos-X, Centro de Investigación Tecnología e Innovación, de la Universidad de Sevilla (CITIUS), Universidad de Sevilla, Avenida Reina Mercedes, 4B. 41012, Sevilla (Spain); Benítez, J.J.; Castro, M.A. [Instituto de Ciencia de Materiales de Sevilla, Consejo Superior de Investigaciones Científicas-Universidad de Sevilla, Avenida Américo Vespucio, 49. 41092, Sevilla (Spain); Cerrillos, C. [Servicio de Microscopía, Centro de Investigación Tecnología e Innovación, de la Universidad de Sevilla (CITIUS), Universidad de Sevilla, Avenida Reina Mercedes, 4B. 41012, Sevilla (Spain); Millán, C. [Instituto de Ciencia de Materiales de Sevilla, Consejo Superior de Investigaciones Científicas-Universidad de Sevilla, Avenida Américo Vespucio, 49. 41092, Sevilla (Spain); Alba, M.D., E-mail: [Instituto de Ciencia de Materiales de Sevilla, Consejo Superior de Investigaciones Científicas-Universidad de Sevilla, Avenida Américo Vespucio, 49. 41092, Sevilla (Spain)


    Previous studies have indicated that long-chain linear carboxylic acids form commensurate packed crystalline monolayers on graphite even at temperatures above their melting point. This study examines the effect on the monolayer formation and structure of adding one or more secondary hydroxyl, functional groups to the stearic acid skeleton (namely, 12-hydroxystearic and 9,10-dihydroxystearic acid). Moreover, a comparative study of the monolayer formation on recompressed and monocrystalline graphite has been performed through X-ray diffraction (XRD) and Scanning Tunneling Microscopy (STM), respectively. The Differential Scanning Calorimetry (DSC) and XRD data were used to confirm the formation of solid monolayers and XRD data have provided a detailed structural analysis of the monolayers in good correspondence with obtained STM images. DSC and XRD have demonstrated that, in stearic acid and 12-hydroxystearic acid adsorbed onto graphite, the monolayer melted at a higher temperature than the bulk form of the carboxylic acid. However, no difference was observed between the melting point of the monolayer and the bulk form for 9,10-dihydroxystearic acid adsorbed onto graphite. STM results indicated that all acids on the surface have a rectangular p2 monolayer structure, whose lattice parameters were uniaxially commensurate on the a-axis. This structure does not correlate with the initial structure of the pure compounds after dissolving, but it is conditioned to favor a) hydrogen bond formation between the carboxylic groups and b) formation of hydrogen bonds between secondary hydroxyl groups, if spatially permissible. Therefore, the presence of hydroxyl functional groups affects the secondary structure and behavior of stearic acid in the monolayer. - Highlights: • Hydroxyl functional groups affect structure and behavior of acids in the monolayer. • Acids on the surface have a rectangular p2 monolayer structure. • Lattice parameters of acids are uniaxially


    Directory of Open Access Journals (Sweden)

    T. A. Ismailov


    Full Text Available Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods. The paper provides a comparative analysis of the advantages of bipolar static induction transistor compared to the bipolar power transistors, MOSFETs and insulated-gate bipolar transistor (IGBT. Considered are structural and technological parameters that influence the resistance of BSIT-transistor.Result. As a result of experimental study on silicon substrates were formed test prototypes of BSIT transistor structure, are presented calculation and experimental works. Obtained are the resistance dependencies of the transistor cell on the thickness of the epitaxial film; the resistance dependencies of BSIT transistor cell on the effective gate length for different values of the impurity concentration in the epitaxial film; dependencies resistance of the transistor cell on the gate length at different values of the epitaxial film thickness; the resistance dependencies of BSIT transistor cell on the distance between the mask for the p-region and the gate; dependencies on the multiplication the cell resistance by its area on the gate length.Conclusion. When increasing the gate length (Lk and the mask length for the p-region (lp + in the transistor structure, the resistance decreases and the dependence of multiplication of the cell resistance by its area Q on the gate length has this case the minimum.

  16. Site-selective biofunctionalization of aluminum nitride surfaces using patterned organosilane self-assembled monolayers. (United States)

    Chiu, Chi-Shun; Lee, Hong-Mao; Gwo, Shangjr


    Surface biochemical functionalization of group-III nitride semiconductors has recently attracted much interest because of their biocompatibility, nontoxicity, and long-term chemical stability under demanding physiochemical conditions for chemical and biological sensing. Among III-nitrides, aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) are particularly important because they are often used as the sensing surfaces for sensors based on field-effect transistor or surface acoustic wave (SAW) sensor structures. To demonstrate the possibility of site-selective biofunctionalization on AlN surfaces, we have fabricated two-dimensional antibody micropatterns on AlN surfaces by using patterned self-assembled monolayer (SAM) templates. Patterned SAM templates are composed of two types of organosilane molecules terminated with different functional groups (amino and methyl), which were fabricated on AlN/sapphire substrates by combining photolithography, lift-off process, and self-assembly technique. Because the patterned SAM templates have different surface properties on the same surface, clear imaging contrast of SAM micropatterns can be observed by field-emission scanning electron microscopy (FE-SEM) operating at a low accelerating voltage in the range of 0.5-1.5 kV. Furthermore, the contrast in surface potential of the binary SAM microstructures was confirmed by selective adsorption of negatively charged colloidal gold nanoparticles (AuNPs). The immobilization of AuNPs was limited on the positively charged amino-terminated regions, while they were scarcely found on the surface regions terminated by methyl groups. In this work, selective immobilization of green fluorescent protein (GFP) antibodies was demonstrated by the specific protein binding of enhanced GFP (EGFP) labeling. The observed strong fluorescent signal from antibody functionalized regions on the SAM-patterned AlN surface indicates the retained biological activity of specific molecular recognition

  17. Grafted organic monolayer for single electron transport and for quantum dots solar cells (United States)

    Caillard, Louis Marie

    Functionalization of oxide-free silicon and silicon oxide surfaces is important for a number of applications. In this work, organic monolayers are grafted (GOM) on oxide-free silicon surfaces using thermal and ultraviolet-activated hydrosilylation of hydrogen-terminated silicon surfaces, primarily using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy for characterization. The resulting amine-terminated GOM have been used for depositing nanoparticles, selecting the end group for two very specific applications: single electron devices and nano-quantum-dot (NQD) enhanced Si photovoltaic cells. To perform single-electron transport measurements, colloidal gold nanoparticles have been deposited on amine-functionalized silicon surfaces and tunneling measurements performed with a scanning tunneling microscope in an ultra-high vacuum chamber. Using a double-barrier tunneling junction (with the GOM as the first barrier and the vacuum between the scanning tip and the gold nanoparticle as the second one), single-electron transport was observed at 30K through a Coulomb staircase phenomenon. The critical parameters were identified to improve reproducibility. Finally, recently developed advanced modeling, based on traditional "orthodox" theory, was optimized to account for the observations (e.g. I-V dependence on band bending). This work provides a basis for the development of single-electron transistors that are compatible with current silicon based technology. To enhance standard silicon-based solar cells, GOM is also needed to graft strongly absorbing II-VI NQDs and optimize their energy transfer to the silicon substrate. Recent photoluminescence spectroscopy has demonstrated that energy transfer occurs through both radiative and non-radiative mechanisms between NQDs and the substrate. With grafting technology, the aim was to optimize absorption, as probed by photoluminescence, in two ways. First, silicon nanopillars were fabricated to increase the

  18. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M


    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  19. Quantum transport in molybdenum disulfide and germanane transistors

    NARCIS (Netherlands)

    Chen, Qihong


    In the past decades, electronic devices are getting smaller and more powerful, following the Moore’s Law. Nevertheless, silicon-based field effect transistors are rapidly approaching their scaling limit. Thus, exploring new channel materials as well as novel device architectures are highly demanded

  20. Organic transistors in optical displays and microelectronic applications

    NARCIS (Netherlands)

    Gelinck, G.H.; Heremans, P.; Nomoto, K.; Anthopoulos, T.D.


    Organic thin-film transistors (OTFTs) offer unprecedented opportunities for implementation in a broad range of technological applications spanning from large-volume microelectronics and optical displays to chemical and biological sensors. In this Progress Report, we review the application of organic

  1. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Mater. Sci., Vol. 37, No. 1, February 2014, pp. 95–99. c Indian Academy of Sciences. High mobility polymer gated organic field effect transistor using zinc phthalocyanine. K R RAJESH. ∗. , V KANNAN, M R KIM, Y S CHAE and J K RHEE. Millimeter- Wave Innovation Technology Research Centre (MINT), Dongguk University,.

  2. Ambipolar light-emitting organic field-effect transistor

    NARCIS (Netherlands)

    Rost, Constance; Karg, Siegfried; Riess, Walter; Loi, Maria Antonietta; Murgia, Mauro; Muccini, Michele


    We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α-quinquethiophene (α-5T) as hole-transport material and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide


    A transistor-regulated multivoltage power supply has been designed to power a microwave transmitter. A battery voltage of 32 = 5 v is regulated...respectively. The power supply maintains this stability over a temperature range of -54C to +75C. Two of the output voltages are completely isolated from the input. (Author)

  4. Transistors-From Point Contact to Single Electron

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 2; Issue 12. Transistors – From Point Contact to Single Electron. D N Bose. General Article Volume 2 Issue 12 December 1997 pp 39-54. Fulltext. Click here to view fulltext PDF. Permanent link: ...

  5. Transistor-like behavior of transition metal complexes

    DEFF Research Database (Denmark)

    Albrecht, Tim; Guckian, A; Ulstrup, Jens


    scanning tunneling microscope (in situ STM). This configuration resembles a single-molecule transistor, where the reference electrode corresponds to the gate electrode. It operates at room temperature in a condensed matter (here aqueous) environment. Amplification on-off ratios up to 50 are found when...

  6. Multiple facets of tightly coupled transducer-transistor structures. (United States)

    Heidari, Hadi; Dahiya, Ravinder


    The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials, which sometimes acquire superior electronic properties. The transduction-based transistor switching mechanism is one such possibility, which exploits the change in electrical properties of the transducer as a function of a mechanically induced deformation. Originally developed for deformation sensors, the technique is now moving to the centre stage of the electronic industry as the basis for new transistor concepts to circumvent the gate voltage bottleneck in transistor miniaturization. In issue 37 of Nanotechnology, Chang et al show the piezoelectronic transistor (PET), which uses a fast, low-power mechanical transduction mechanism to propagate an input gate voltage signal into an output resistance modulation. The findings by Chang et al will spur further research into piezoelectric scaling, and the PET fabrication techniques needed to advance this type of device in the future.

  7. The spin-valve transistor: a preview and outlook

    NARCIS (Netherlands)

    Jansen, R.


    Combining ferromagnetic and semiconductor materials is a challenging route to create new options for electronic devices in which the spin of the electron is employed. The spin-valve transistor (SVT) is the first of such hybrid devices shown to work successfully. This review describes the basic

  8. Quantum thermal rectification to design thermal diodes and transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joulain, Karl; Ezzahri, Younes; Ordonez-Miranda, Jose [Univ. de Poitiers, Futuroscope Chasseneuil (France). Inst. Pprime, CNRS


    We study in this article how heat can be exchanged between two-level systems, each of them being coupled to a thermal reservoir. Calculations are performed solving a master equation for the density matrix using the Born-Markov approximation. We analyse the conditions for which a thermal diode and a thermal transistor can be obtained as well as their optimisation.

  9. Bimolecular recombination in ambipolar organic field effect transistors

    NARCIS (Netherlands)

    Charrier, D.S.H.; Vries, T. de; Mathijssen, S.G.J.; Geluk, E.-J.; Smits, E.C.P.; Kemerink, M.; Janssen, R.A.J.


    In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy

  10. Selected Transistor Material for the Information-Seeking Adult. (United States)

    Ringold, Dorman R.

    This study was undertaken to identify and organize meaningful and useful basic materials on transistor principles and applications, and to explore some of the elements required for adult teaching. It was limited to the apparent needs of information-seeking adults in greater Los Angeles who desired occupational skills. A literature review…

  11. Bipolar Transistors Can Detect Charge in Electrostatic Experiments (United States)

    Dvorak, L.


    A simple charge indicator with bipolar transistors is described that can be used in various electrostatic experiments. Its behaviour enables us to elucidate links between 'static electricity' and electric currents. In addition it allows us to relate the sign of static charges to the sign of the terminals of an ordinary battery. (Contains 7 figures…

  12. Experiments with Charge Indicator Based on Bipolar Transistors (United States)

    Dvorak, Leos; Planinsic, Gorazd


    A simple charge indicator with bipolar transistors described recently enables us to perform a number of experiments suitable for high-school physics. Several such experiments are presented and discussed in this paper as well as some features of the indicator important for its use in schools, namely its sensitivity and robustness, i.e. the…

  13. Modeling of the bipolar transistor under different pulse ionizing radiations (United States)

    Antonova, A. M.; Skorobogatov, P. K.


    This paper describes a 2D model of the bipolar transistor 2T312 under gamma, X-ray and laser pulse ionizing radiations. Both the Finite Element Discretization and Semiconductor module of Comsol 5.1 are used. There is an analysis of energy deposition in this device under different radiations and the results of transient ionizing current response for some different conditions.

  14. The spin-valve transistor: Fabrication, characterization and physics

    NARCIS (Netherlands)

    Jansen, R.; van 't Erve, O.M.J.; Kim, S.D.; Vlutters, R.; Anil Kumar, P.S.; Lodder, J.C.


    An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We

  15. Electronic properties of germanane field-effect transistors

    NARCIS (Netherlands)

    Madhushankar, B.N.; Kaverzin, A.; Giousis, T.; Potsi, G.; Gournis, D.; Rudolf, P.; Blake, G.R.; van der Wal, C.H.; van Wees, B.J.


    A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in

  16. Multiple facets of tightly coupled transducer-transistor structures (United States)

    Heidari, Hadi; Dahiya, Ravinder


    The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials, which sometimes acquire superior electronic properties. The transduction-based transistor switching mechanism is one such possibility, which exploits the change in electrical properties of the transducer as a function of a mechanically induced deformation. Originally developed for deformation sensors, the technique is now moving to the centre stage of the electronic industry as the basis for new transistor concepts to circumvent the gate voltage bottleneck in transistor miniaturization. In issue 37 of Nanotechnology, Chang et al show the piezoelectronic transistor (PET), which uses a fast, low-power mechanical transduction mechanism to propagate an input gate voltage signal into an output resistance modulation. The findings by Chang et al will spur further research into piezoelectric scaling, and the PET fabrication techniques needed to advance this type of device in the future.

  17. Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav


    Roč. 129, May (2015), 95-99 ISSN 0927-7765 R&D Projects: GA ČR GAP108/12/0996 Grant - others:AVČR(CZ) M100101209 Institutional support: RVO:68378271 Keywords : field-effect transistors * nanocrystalline diamond * osteoblastic cells * leakage currents Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.902, year: 2015

  18. Current-Induced Transistor Sensorics with Electrogenic Cells

    Directory of Open Access Journals (Sweden)

    Peter Fromherz


    Full Text Available The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand–activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned.

  19. Discontinuous pn-heterojunction for organic thin film transistors

    NARCIS (Netherlands)

    Cho, B.; Yu, S.H.; Kim, M.; Lee, M.H.; Huh, W.; Lee, J.; Kim, J.; Cho, J.H.; Lee, J.Y.; Song, Y.J.; Kang, M.S.


    Utilization of discontinuous pn-oragnic heterojunction is introduced as a versatile method to improve charge transport in organic thin film transistors (OTFTs). The method is demonstrated by depositing n-type dioctyl perylene tetracarboxylic diimide (PTCDI-C8) discontinuously onto base p-type

  20. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator. (United States)

    Zhu, Weinan; Yogeesh, Maruthi N; Yang, Shixuan; Aldave, Sandra H; Kim, Joon-Seok; Sonde, Sushant; Tao, Li; Lu, Nanshu; Akinwande, Deji


    High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

  1. Field-Induced Superconductivity in Electric Double Layer Transistors

    NARCIS (Netherlands)

    Ueno, Kazunori; Shimotani, Hidekazu; Yuan, Hongtao; Ye, Jianting; Kawasaki, Masashi; Iwasa, Yoshihiro

    Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electric-field-induced superconductivity was believed to be

  2. Development of the spin valve transistor (invited paper)

    NARCIS (Netherlands)

    Monsma, D.J.; Vlutters, R.; Shimatsu, T.; Shimatsu, T.; Keim, Enrico G.; Mollema, R.H.; Lodder, J.C.


    As the easiest experimental approach, GMR (giant magnetoresistance) is usually measured using the current in plane (CIP)-GMR. The spin-valve transistor has previously been presented as a spectroscopic tool to measure current perpendicular to the planes (CPP)-GMR. Hot electrons cross the magnetic

  3. Single-molecule probes in organic field-effect transistors

    NARCIS (Netherlands)

    Nicolet, Aurélien Armel Louis


    The goal of this thesis is to study charge transport phenomena in organic materials. This is done optically by means of single-molecule spectroscopy in a field-effect transistor based on a molecular crystal. We present (in Chapter 2) a fundamental requirement for single-molecule spectroscopy

  4. Physics of organic ferroelectric field-effect transistors

    NARCIS (Netherlands)

    Brondijk, J.J.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de


    Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model

  5. Microwave flexible transistors on cellulose nanofibrillated fiber substrates (United States)

    Jung-Hun Seo; Tzu-Hsuan Chang; Jaeseong Lee; Ronald Sabo; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma


    In this paper, we demonstrate microwave flexible thin-film transistors (TFTs) on biodegradable substrates towards potential green portable devices. The combination of cellulose nanofibrillated fiber (CNF) substrate, which is a biobased and biodegradable platform, with transferrable single crystalline Si nanomembrane (Si NM), enables the realization of truly...

  6. BUSFET - A Novel Radiation-Hardened SOI Transistor

    International Nuclear Information System (INIS)

    Dodd, P.E.; Draper, B.L.; Schwank, J.R.; Shaneyfelt, M.R.


    A partially-depleted SOI transistor structure has been designed that does not require the use of specially-processed hardened buried oxides for total-dose hardness and maintains the intrinsic SEU and dose rate hardness advantages of SOI technology

  7. Nanoscaled biological gated field effect transistors for cytogenetic analysis

    DEFF Research Database (Denmark)

    Kwasny, Dorota; Dimaki, Maria; Andersen, Karsten Brandt


    Cytogenetic analysis is the study of chromosome structure and function, and is often used in cancer diagnosis, as many chromosome abnormalities are linked to the onset of cancer. A novel label free detection method for chromosomal translocation analysis using nanoscaled field effect transistors...

  8. Metal-nanoparticle single-electron transistors fabricated using electromigration

    DEFF Research Database (Denmark)

    Bolotin, K I; Kuemmeth, Ferdinand; Pasupathy, A N


    We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all...

  9. Operational Stability of Organic Field‐Effect Transistors

    NARCIS (Netherlands)

    Bobbert, P.A.; Sharma, A.; Matthijssen, S.J.G.; Kemerink, M.; de Leeuw, D.M.


    Organic field-effect transistors (OFETs) are considered in technological applications for which low cost or mechanical flexibility are crucial factors. The environmental stability of the organic semiconductors used in OFETs has improved to a level that is now sufficient for commercialization.

  10. Influence of halo doping profiles on MOS transistor mismatch

    NARCIS (Netherlands)

    Andricciola, P.; Tuinhout, H.


    Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The

  11. Solution-gated Field Effect Transistors based on CVD grown Graphene for chemical and bio sensing applications (United States)

    Mailly Giacchetti, Benjamin; Hsu, Allen; Wang, Han; Kim, Ki Kang; Kong, Jing; Palacios, Tomas


    Graphene holds great potential for bioelectronic applications and, more specifically, for fast high-sensitivity pH measurements and biosensing. Its monolayer structure (just one carbon atom thick) in combination with its very high carrier mobility enable very high transconductance, low noise and biocompatibility which are key parameters for chemical sensors with electronic readout. In fact, single molecule detection has already been demonstrated in graphene gas sensors. In this paper we report on the fabrication and characterization of solution-gated field effect transistors (SGFET) arrays based on CVD grown graphene films on copper that can operate in various liquid environments. These devices exhibit transconductances around 20 μ Siemens, which highlights their excellent sensitivity. We also performed some pH sensing experiments and demonstrated that the transfer characteristics of the GFET are pH dependent with a pH sensitivity of 14 mV/pH. These results drive the way for chemical and bio-sensing by functionalized graphene, which is the aim of our future work.

  12. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors (United States)

    Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang


    Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

  13. Selective sodium sensing with gold-coated silicon nanowire field-effect transistors in a differential setup. (United States)

    Wipf, Mathias; Stoop, Ralph L; Tarasov, Alexey; Bedner, Kristine; Fu, Wangyang; Wright, Iain A; Martin, Colin J; Constable, Edwin C; Calame, Michel; Schönenberger, Christian


    Ion-sensitive field-effect transistors based on silicon nanowires with high dielectric constant gate oxide layers (e.g., Al2O3 or HfO2) display hydroxyl groups which are known to be sensitive to pH variations but also to other ions present in the electrolyte at high concentration. This intrinsically nonselective sensitivity of the oxide surface greatly complicates the selective sensing of ionic species other than protons. Here, we modify individual nanowires with thin gold films as a novel approach to surface functionalization for the detection of specific analytes. We demonstrate sodium ion (Na(+)) sensing by a self-assembled monolayer (SAM) of thiol-modified crown ethers in a differential measurement setup. A selective Na(+) response of ≈-44 mV per decade in a NaCl solution is achieved and tested in the presence of protons (H(+)), potassium (K(+)), and chloride (Cl(-)) ions, by measuring the difference between a nanowire with a gold surface functionalized by the SAM (active) and a nanowire with a bare gold surface (control). We find that the functional SAM does not affect the unspecific response of gold to pH and background ionic species. This represents a clear advantage of gold compared to oxide surfaces and makes it an ideal candidate for differential measurements.

  14. Collapse of Langmuir monolayer at lower surface pressure: Effect of hydrophobic chain length

    Energy Technology Data Exchange (ETDEWEB)

    Das, Kaushik, E-mail:; Kundu, Sarathi [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Vigyan Path, Paschim Boragaon, Garchuk, Guwahati, Assam 781035 (India)


    Long chain fatty acid molecules (e.g., stearic and behenic acids) form a monolayer on water surface in the presence of Ba{sup 2+} ions at low subphase pH (≈ 5.5) and remain as a monolayer before collapse generally occurs at higher surface pressure (π{sub c} > 50 mN/m). Monolayer formation is verified from the surface pressure vs. area per molecule (π-A) isotherms and also from the atomic force microscopy (AFM) analysis of the films deposited by single upstroke of hydrophilic Si (001) substrate through the monolayer covered water surface. At high subphase pH (≈ 9.5), barium stearate molecules form multilayer structure at lower surface pressure which is verified from the π-A isotherms and AFM analysis of the film deposited at 25 mN/m. Such monolayer to multilayer structure formation or monolayer collapse at lower surface pressure is unusual as at this surface pressure generally fatty acid salt molecules form a monolayer on the water surface. Formation of bidentate chelate coordination in the metal containing headgroups is the reason for such monolayer to multilayer transition. However, for longer chain barium behenate molecules only monolayer structure is maintained at that high subphase pH (≈ 9.5) due to the presence of relatively more tail-tail hydrophobic interaction.

  15. Active cell-matrix coupling regulates cellular force landscapes of cohesive epithelial monolayers (United States)

    Zhao, Tiankai; Zhang, Yao; Wei, Qiong; Shi, Xuechen; Zhao, Peng; Chen, Long-Qing; Zhang, Sulin


    Epithelial cells can assemble into cohesive monolayers with rich morphologies on substrates due to competition between elastic, edge, and interfacial effects. Here we present a molecularly based thermodynamic model, integrating monolayer and substrate elasticity, and force-mediated focal adhesion formation, to elucidate the active biochemical regulation over the cellular force landscapes in cohesive epithelial monolayers, corroborated by microscopy and immunofluorescence studies. The predicted extracellular traction and intercellular tension are both monolayer size and substrate stiffness dependent, suggestive of cross-talks between intercellular and extracellular activities. Our model sets a firm ground toward a versatile computational framework to uncover the molecular origins of morphogenesis and disease in multicellular epithelia.

  16. Monitoring the hydration of DNA self-assembled monolayers using an extensional nanomechanical resonator

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Kosaka, Priscila; Tamayo, Javier


    We have fabricated an ultrasensitive nanomechanical resonator based on the extensional vibration mode to weigh the adsorbed water on self-assembled monolayers of DNA as a function of the relative humidity. The water adsorption isotherms provide the number of adsorbed water molecules per nucleotide...... for monolayers of single stranded (ss) DNA and after hybridization with the complementary DNA strand. Our results differ from previous data obtained with bulk samples, showing the genuine behavior of these self-assembled monolayers. The hybridization cannot be inferred from the water adsorption isotherms due...... on the interaction between water and self-assembled monolayers of nucleic acids....

  17. Thermodynamic and real-space structural evidence of a 2D critical point in phospholipid monolayers

    DEFF Research Database (Denmark)

    Nielsen, Lars K.; Bjørnholm, Thomas; Mouritsen, Ole G.


    The two-dimensional phase diagram of phospholipid monolayers at air-water interfaces has been constructed from Langmuir compression isotherms. The coexistence region between the solid and fluid phases of the monolayer ends at the critical temperature of the transition. The small-scale lateral...... structure of the monolayers has been imaged by atomic force microscopy in the nm to mu m range at distinct points in the phase diagram. The lateral structure is immobilized by transferring the monolayer from an air-water interface to a solid mica support using Langmuir-Blodgett techniques. A transfer...

  18. Transport of curcumin derivatives in Caco-2 cell monolayers. (United States)

    Zeng, Zhen; Shen, Zhe L; Zhai, Shuo; Xu, Jia L; Liang, Hui; Shen, Qin; Li, Qing Y


    Curcumin (Cur) is a strong natural antioxidant, who can prevent multiple diseases such as anti-cancer, anti-inflammatory, have a resistance to alzheimer's disease and various malignant diseases. But it has poor oral bioavailability due to its poor aqueous solubility, as well as instability. While its novel derivatives (CB and FE), showed better anti-tumor activity, better anti-oxidant activity and better stability than the original drug (Cur). The aim of this study was to study the intestinal transport of Cur, CB and FE using an in vitro Caco-2 cell monolayer model. The results showed that Cur had a lower permeability coefficient (1.13×10 -6 ±0.11×10 -6 cm/s) for apical-to-basolated (AP-BL) transport at 25μM, while the transport rate for AP to BL flux of CB (3.18×10 -6 ±0.31×10 -6 cm/s) and FE (5.28×10 -6 ±0.83×10 -6 cm/s) were significantly greater than that of Cur. The efflux ratio (ER) value at the concentration of 25μM was 1.31 for Cur, 1.26 for CB and 1.33 for FE, suggesting there was no active efflux involved in the translocation across the Caco-2 cell monolayers for the three compounds. Furthermore, the transport flux of CB and FE was in a concentration dependent manner, suggesting the intestinal transport mechanism in them was passive transport. In summary, the results demonstrated that both the intestinal permeability of CB and FE across Caco-2 cell monolayers was significantly improved compare to Cur. Thus they might show a higher oral bioavailability in vivo, and show the potential application in clinic or nutraceutical. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. Metal adsorption on monolayer blue phosphorene: A first principles study (United States)

    Khan, Imran; Son, Jicheol; Hong, Jisang


    We investigated the electronic structure, adsorption energies, magnetic properties, dipole moment and work function of metal adatoms (Mg, Cr, Mo, Pd, Pt, and Au) adsorption on a blue phosphorene monolayer. For Mg, Pt and Au metals, the most stable state was found in hollow site while for Cr, Mo and Pd metals we found an adsorption in valley site. We suggest that the Pd and Pt atoms prefer 2D growth mode while the Mg, Cr, Mo and Au atoms prefer 3D island growth mode on monolayer phosphorene. The electronic band structures and magnetic properties were dependent on the doping site and dopant materials. For instance, the semiconducting features were preserved in Mg, Pd, Pt, and Au doped systems. However, the Cr and Mo doped systems displayed half-metallic band structures. The total magnetic moment of 4.05, 2.0 and 0.77 μB /impurity atom were obtained in Cr, Mo and Au doped systems whereas the Mg, Pd and Pt doped systems remained nonmagnetic. We also investigated the magnetic interaction between two transition metal impurities. We observed ferromagnetic coupling between two transition metal impurities in Cr and Mo doped systems while the Au doped system displayed almost degenerated magnetic state. For Mg, Cr, and Mo adsorptions, we found relatively large values of dipole moments compared to those in the Pd, Pt and Au adsorptions. This resulted in a significant suppression of the work function in Mg, Cr and Mo adsorptions. Overall, adsorption can tune the physical and magnetic properties of phosphorene monolayer.

  20. Large-area monolayer hexagonal boron nitride on Pt foil. (United States)

    Park, Ji-Hoon; Park, Jin Cheol; Yun, Seok Joon; Kim, Hyun; Luong, Dinh Hoa; Kim, Soo Min; Choi, Soo Ho; Yang, Woochul; Kong, Jing; Kim, Ki Kang; Lee, Young Hee


    Hexagonal boron nitride (h-BN) has recently been in the spotlight due to its numerous applications including its being an ideal substrate for two-dimensional electronics, a tunneling material for vertical tunneling devices, and a growth template for heterostructures. However, to obtain a large area of h-BN film while maintaining uniform thickness is still challenging and has not been realized. Here, we report the systematical study of h-BN growth on Pt foil by using low pressure chemical vapor deposition with a borazine source. The monolayer h-BN film was obtained over the whole Pt foil (2 × 5 cm(2)) under foil size. A borazine source was catalytically decomposed on the Pt surface, leading to the self-limiting growth of the monolayer without the associating precipitation, which is very similar to the growth of graphene on Cu. The orientation of the h-BN domains was largely confined by the Pt domain, which is confirmed by polarizing optical microscopy (POM) assisted by the nematic liquid crystal (LC) film. The total pressure and orientation of the Pt lattice plane are crucial parameters for thickness control. At high pressure (∼0.5 Torr), thick film was grown on Pt (111), and in contrast, thin film was grown on Pt (001). Our advances in monolayer h-BN growth will play an important role to further develop a high quality h-BN film that can be used for vertical tunneling, optoelectronic devices and growth templates for a variety of heterostructures.