WorldWideScience

Sample records for chemically vapour deposited

  1. Hot-wire chemical vapour deposition of carbon nanotubes

    CSIR Research Space (South Africa)

    Cummings, FR

    2006-07-01

    Full Text Available ablation of graphite, carbon-arc discharge and chemical vapour deposition (CVD). However, some of these techniques have been shown to be expensive due to high deposition temperatures and are not easily controllable. Recently hot-wire chemical vapour...

  2. Chemical vapour deposition of carbon nanotubes

    CSIR Research Space (South Africa)

    Arendse, CJ

    2006-02-01

    Full Text Available , effective, more versatile and easily scalable to large substrate sizes. In this paper, we present a design of the hot-wire CVD system constructed at the CSIR for the deposition of CNTs. Additionally, we will report on the structure of CNTs deposited... exhibit exceptional chemical and physical properties related to toughness, chemical inertness, magnetism, and electrical and thermal conductivity. A variety of preparation methods to synthesise CNTs are known, e.g. carbon-arc discharge, laser ablation...

  3. Chemical Vapour Deposition of Large Area Graphene

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget

    Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform......, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, and (2) optimize the process of growing high quality graphene in terms of carrier mobility, and crystal...... structure. Optimization of a process for graphene growth on commercially available copper foil is limited by the number of aluminium oxide particles on the surface of the catalyst. By replacing the copper foil with a thin deposited copper film on a SiO2/Si or c-plane sapphire wafer the particles can...

  4. Chemical vapour deposition of thin-film dielectrics

    International Nuclear Information System (INIS)

    Vasilev, Vladislav Yu; Repinsky, Sergei M

    2005-01-01

    Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

  5. CHEMICAL VAPOUR DEPOSITION FROM A RADIATION-SENSITIVE PRECURSOR

    DEFF Research Database (Denmark)

    2017-01-01

    The present invention relates in one aspect to a method of depositing a thin film on a substrate by chemical vapour deposition (CVD) from a radiation-sensitive precursor substance. The method comprises the steps of: (i) placing the substrate in a reaction chamber of a CVD system; (ii) heating...... heating pulse followed by an idle period; (iii) during at least one of the idle periods, providing a pressure pulse of precursor substance inside the reaction chamber by feeding at least one precursor substance to the reaction chamber so as to establish a reaction partial pressure for thin film deposition...... is formed. According to a further aspect, the invention relates to a chemical vapour deposition (CVD) system for depositing a thin film onto a substrate using precursor substances containing at least one radiation sensitive species....

  6. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    NARCIS (Netherlands)

    Bignardi, L.; Dorp, W.F. van; Gottardi, S.; Ivashenko, O.; Dudin, P.; Barinov, A.; de Hosson, J.T.M.; Stöhr, M.; Rudolf, P.

    2013-01-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron

  7. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Sharma, Uttam; Chauhan, Sachin S; Sharma, Jayshree; Sanyasi, A K; Ghosh, J; Choudhary, K K; Ghosh, S K

    2016-01-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m 2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS. (paper)

  8. Low pressure chemical vapour deposition of temperature resistant colour filters

    International Nuclear Information System (INIS)

    Verheijen, J.; Bongaerts, P.; Verspui, G.

    1987-01-01

    The possibility to deposit multilayer colour filters, based on optical inference, by means of Low Pressure Chemical Vapour Deposition (LPCVD) was investigated. The filters were made in a standard LPCVD system by alternate deposition of Si/sub 3/N/sub 4/ and SiO/sub 2/ layers. This resulted in filters with excellent colour uniformity on glass and quartz substrates. No difference was measured between theoretically calculated transmission and the transmission of the filters deposited by LPCVD. Temperature treatment at 600 0 C in air air showed no deterioration of filter quality and optical properties

  9. Physical properties of chemical vapour deposited nanostructured carbon thin films

    International Nuclear Information System (INIS)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H.; Rajpure, K.Y.

    2011-01-01

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C 10 H 16 )' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp 3 bonds with diamond phase and less for SS shows graphitization effect with dominant sp 2 bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  10. The atmospheric chemical vapour deposition of coatings on glass

    International Nuclear Information System (INIS)

    Sanderson, Kevin David

    1996-01-01

    The deposition of thin films of indium oxide, tin doped indium oxide (ITO) and titanium nitride for solar control applications have been investigated by Atmospheric Chemical Vapour Deposition (APCVD). Experimental details of the deposition system and the techniques used to characterise the films are presented. Results from investigations into the deposition parameters, the film microstructure and film material properties are discussed. A range of precursors were investigated for the deposition of indium oxide. The effect of pro-mixing the vaporised precursor with an oxidant source and the deposition temperature has been studied. Polycrystalline In 2 O 3 films with a resistivity of 1.1 - 3x10 -3 Ω cm were obtained with ln(thd) 3 , oxygen and nitrogen. The growth of ITO films from ln(thd) 3 , oxygen and a range of tin dopants is also presented. The effect of the dopant precursor, the doping concentration, deposition temperature and the effect of additives on film growth and microstructure is discussed. Control over the preferred orientation growth of ITO has been achieved by the addition of acetate species during film growth. Insitu infra-red spectroscopy has been used to identify the gas phase species and identify the species responsible for the film modification. ITO films with a resistivities of 1.5 - 4x10 -4 Ω cm have been achieved. The deposition of titanium nitride by the APCVD of Ti(NMe 2 ) 4 and a mixture of Ti(NMe 2 ) 4 and ammonia is reported. Contamination of the films and pro-reaction between the precursors in the gas phase is discussed, and the synthesis of new precursors for the deposition of titanium nitride is reported. New precursors have been synthesised under anaerobic conditions and characterised by infra-red spectroscopy, 1 H and 13 C NMR, mass spectrometry, thermal gravemetric analysis and three by single crystal X-ray diffraction. Deposition of titanium nitride utilising two new precursors is reported. (author)

  11. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  12. Chemical vapour deposition synthetic diamond: materials, technology and applications

    International Nuclear Information System (INIS)

    Balmer, R S; Brandon, J R; Clewes, S L; Dhillon, H K; Dodson, J M; Friel, I; Inglis, P N; Madgwick, T D; Markham, M L; Mollart, T P; Perkins, N; Scarsbrook, G A; Twitchen, D J; Whitehead, A J; Wilman, J J; Woollard, S M

    2009-01-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

  13. Chemical vapour deposition of freestanding sub-60 nm graphene gyroids

    Science.gov (United States)

    Cebo, Tomasz; Aria, Adrianus I.; Dolan, James A.; Weatherup, Robert S.; Nakanishi, Kenichi; Kidambi, Piran R.; Divitini, Giorgio; Ducati, Caterina; Steiner, Ullrich; Hofmann, Stephan

    2017-12-01

    The direct chemical vapour deposition of freestanding graphene gyroids with controlled sub-60 nm unit cell sizes is demonstrated. Three-dimensional (3D) nickel templates were fabricated through electrodeposition into a selectively voided triblock terpolymer. The high temperature instability of sub-micron unit cell structures was effectively addressed through the early introduction of the carbon precursor, which stabilizes the metallized gyroidal templates. The as-grown graphene gyroids are self-supporting and can be transferred onto a variety of substrates. Furthermore, they represent the smallest free standing periodic graphene 3D structures yet produced with a pore size of tens of nm, as analysed by electron microscopy and optical spectroscopy. We discuss generality of our methodology for the synthesis of other types of nanoscale, 3D graphene assemblies, and the transferability of this approach to other 2D materials.

  14. Polarized Raman spectroscopy of chemically vapour deposited diamond films

    International Nuclear Information System (INIS)

    Prawer, S.; Nugent, K.W.; Weiser, P.S.

    1994-01-01

    Polarized micro-Raman spectra of chemically vapour deposited diamond films are presented. It is shown that important parameters often extracted from the Raman spectra such as the ratio of the diamond to non-diamond component of the films and the estimation of the level of residual stress depend on the orientation of the diamond crystallites with respect to the polarization of the incident laser beam. The dependence originates from the fact that the Raman scattering from the non-diamond components in the films is almost completely depolarized whilst the scattering from the diamond components is strongly polarized. The results demonstrate the importance of taking polarization into account when attempting to use Raman spectroscopy in even a semi-quantitative fashion for the assessment of the purity, perfection and stress in CVD diamond films. 8 refs., 1 tab. 2 figs

  15. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  16. Chemical vapour deposition of vanadium oxide thermochromic thin films

    Science.gov (United States)

    Piccirillo, Clara

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

  17. SiC fibre by chemical vapour deposition on tungsten filament

    Indian Academy of Sciences (India)

    Unknown

    SiC fibre by chemical vapour deposition on tungsten filament ... CMCs), in defence and industrial applications. SiC has attractive ... porosity along with chemical purity. This is lacking .... reactor. Since mercury is very toxic it should be removed.

  18. Long distance spin communication in chemical vapour deposited graphene

    Science.gov (United States)

    Kamalakar, M. Venkata; Groenveld, Christiaan; Dankert, André; Dash, Saroj P.

    2015-04-01

    Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ~6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications.

  19. ZnO based nanowires grown by chemical vapour deposition for selective hydrogenation of acetylene alcohols

    NARCIS (Netherlands)

    Protasova, L.N.; Rebrov, E.; Choy, K.L.; Pung, S.Y.; Engels, V.; Cabaj, M.; Wheatley, A.E.H.; Schouten, J.C.

    2011-01-01

    Vertically aligned ZnO nanowires (NWs) with a length of 1.5–10 µm and a mean diameter of ca. 150 nm were grown by chemical vapour deposition onto a c-oriented ZnO seed layer which was deposited by atomic layer deposition on Si substrates. The substrates were then spin-coated with an ethanol solution

  20. Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

    NARCIS (Netherlands)

    Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2014-01-01

    Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing

  1. ArF Laser -Induced Chemical Vapour Deposition of Polythiene Films from Carbon Disulfide

    Czech Academy of Sciences Publication Activity Database

    Tomovska, R.; Bastl, Zdeněk; Vorlíček, Vladimír; Vacek, Karel; Šubrt, Jan; Plzák, Zbyněk; Pola, Josef

    2003-01-01

    Roč. 107, č. 36 (2003), s. 9793-9801 ISSN 1089-5647 R&D Projects: GA MŠk ME 612 Institutional research plan: CEZ:AV0Z4032918; CEZ:AV0Z4040901 Keywords : laser photolysis * ArF * chemical vapour deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.679, year: 2003

  2. Strain and Structure Heterogeneity in MoS2 Atomic Layers Grown by Chemical Vapour Deposition

    Science.gov (United States)

    2014-11-18

    cture heterogeneity in MoS2 atomiclayers grown by chemical vapour deposition 6. AUTHORS Zheng Liu, Matin Amani, Sina Najmaei, Quan Xu, Xiaolong Zou...deposition Zheng Liu1•2•3·*, Matin Amani4·*, Sina Najmaei5·*, Quan Xu6•7, Xiaolong Zou5, Wu Zhou8, Ting Yu9, Caiyu Qiu9, A Glen Birdwell4, Frank J. Crowne4

  3. Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Zhu Huichao; Zhang Baolin; Li Xiangping; Dong Xin; Li Wancheng; Guan Hesong; Cui Yongguo; Xia Xiaochuan; Yang Tianpeng; Chang Yuchun; Du Guotong

    2007-01-01

    Vertically aligned ZnO films were deposited on n-InP by metalorganic chemical vapour deposition. X-ray diffraction, field emission scanning electron microscopy and photoluminescence measurements demonstrated that the ZnO films had good quality. By evaporating AuZn electrodes on both ZnO and InP surfaces, a ZnO-based light emitting device was fabricated. Under forward voltage, weak green emissions can be observed in darkness

  4. Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

    2008-01-01

    The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

  5. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki

    protective layers of tantalum because of the process’ ability to coat complex geometries and its relative ease to control. This work focuses on studying the CVD of tantalum in long narrow channels with the view that the knowledge gained during the project can be used to optimise the commercial coating...... and that there is a major change in morphology between 850 – 900 °C. The effects of system pressure and precursor partial pressure are also studied, and were found to have relevance to the tantalum distribution along the substrates but little effect on the structural morphology of the deposited layer. In the implemented...

  6. Chemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubes

    Science.gov (United States)

    Lai, Y.-C.; Rafailov, P. M.; Vlaikova, E.; Marinova, V.; Lin, S. H.; Yu, P.; Yu, S.-C.; Chi, G. C.; Dimitrov, D.; Sveshtarov, P.; Mehandjiev, V.; Gospodinov, M. M.

    2016-02-01

    Single-layer graphene films were grown by chemical vapour deposition (CVD) on Cu foil. The CVD process was complemented by plasma enhancement to grow also vertically aligned multiwalled carbon nanotubes using Ni nanoparticles as catalyst. The obtained samples were characterized by Raman spectroscopy analysis. Nature of defects in the samples and optimal growth conditions leading to achieve high quality of graphene and carbon nanotubes are discussed.

  7. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    International Nuclear Information System (INIS)

    Dabirian, Ali; Kuzminykh, Yury; Wagner, Estelle; Benvenuti, Giacomo; Rushworth, Simon; Hoffmann, Patrik

    2014-01-01

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb 2 (OEt) 10 does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt) 5 acts as an octahedral field completing entity and leads to Nb(OEt) 4 (dmae). We show that Nb(OEt) 4 (dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h −1 to values larger than 400 nm·h −1 can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt) 4 (dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt) 4 (dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an atomic layer deposition (ALD) process

  8. Laser diagnostics of a diamond depositing chemical vapour deposition gas-phase environment

    Energy Technology Data Exchange (ETDEWEB)

    Smith, James Anthony

    2002-07-01

    Studies have been carried out to understand the gas-phase chemistry underpinning diamond deposition in hot filament and DC-arcjet chemical vapour deposition (CVD) systems. Resonance enhanced Multiphoton lonisation (REMPI) techniques were used to measure the relative H atom and CH{sub 3} radical number densities and local gas temperatures prevalent in a hot filament reactor, operating on Ch{sub 4}/H{sub 2} and C{sub 2}H{sub 2}/H{sub 2} gas mixtures. These results were compared to a 3D-computer simulation, and hence provided an insight into the nature of the gas-phase chemistry with particular reference to C{sub 2}{yields}C{sub 1} species conversion. Similar experimental and theoretical studies were also carried out to explain the chemistry involved in NH{sub 3}/CH{sub 4}/H{sub 2} and N{sub 2}/CH{sub 4}/H{sub 2} gas mixtures. It was demonstrated that the reactive nature of the filament surface was dependent on the addition of NH{sub 3}, influencing atomic hydrogen production, and thus the H/C/N gas-phase chemistry. Studies of the DC-arcjet diamond CVD reactor consisted of optical emission spectroscopic studies of the plume during deposition from an Ar/H{sub 2}/CH{sub 4}/N{sub 2} gas mixture. Spatially resolved species emission intensity maps were obtained for C{sub 2}(d{yields}a), CN(B{yields}X) and H{sub {beta}} from Abel-inverted datasets. The C{sub 2}(d{yields}a) and CN(B{yields}X) emission intensity maps both show local maxima near the substrate surface. SEM and Laser Raman analyses indicate that N{sub 2} additions lead to a reduction in film quality and growth rate. Photoluminescence and SIMS analyses of the grown films provide conclusive evidence of nitrogen incorporation (as chemically bonded CN). Absolute column densities of C{sub 2}(a) in a DC-arcjet reactor operating on an Ar/H{sub 2}/CH{sub 4} gas mixture, were measured using Cavity ring down spectroscopy. Simulations of the measured C{sub 2}(v=0) transition revealed a rotational temperature of {approx

  9. Laser diagnostics of a diamond depositing chemical vapour deposition gas-phase environment

    International Nuclear Information System (INIS)

    Smith, James Anthony

    2002-01-01

    Studies have been carried out to understand the gas-phase chemistry underpinning diamond deposition in hot filament and DC-arcjet chemical vapour deposition (CVD) systems. Resonance enhanced Multiphoton lonisation (REMPI) techniques were used to measure the relative H atom and CH 3 radical number densities and local gas temperatures prevalent in a hot filament reactor, operating on Ch 4 /H 2 and C 2 H 2 /H 2 gas mixtures. These results were compared to a 3D-computer simulation, and hence provided an insight into the nature of the gas-phase chemistry with particular reference to C 2 →C 1 species conversion. Similar experimental and theoretical studies were also carried out to explain the chemistry involved in NH 3 /CH 4 /H 2 and N 2 /CH 4 /H 2 gas mixtures. It was demonstrated that the reactive nature of the filament surface was dependent on the addition of NH 3 , influencing atomic hydrogen production, and thus the H/C/N gas-phase chemistry. Studies of the DC-arcjet diamond CVD reactor consisted of optical emission spectroscopic studies of the plume during deposition from an Ar/H 2 /CH 4 /N 2 gas mixture. Spatially resolved species emission intensity maps were obtained for C 2 (d→a), CN(B→X) and H β from Abel-inverted datasets. The C 2 (d→a) and CN(B→X) emission intensity maps both show local maxima near the substrate surface. SEM and Laser Raman analyses indicate that N 2 additions lead to a reduction in film quality and growth rate. Photoluminescence and SIMS analyses of the grown films provide conclusive evidence of nitrogen incorporation (as chemically bonded CN). Absolute column densities of C 2 (a) in a DC-arcjet reactor operating on an Ar/H 2 /CH 4 gas mixture, were measured using Cavity ring down spectroscopy. Simulations of the measured C 2 (v=0) transition revealed a rotational temperature of ∼3300 K. This gas temperature is similar to that deduced from optical emission spectroscopy studies of the C 2 (d→a) transition. (author)

  10. TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition

    International Nuclear Information System (INIS)

    Tristao, Juliana Cristina; Moura, Flavia Cristina Camilo; Lago, Rochel Montero; Sapag, Karim

    2010-01-01

    In this work, a TPR (Temperature Programmed Reduction) system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition), The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al 2 O 3 and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields. (author)

  11. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista-UNESP, Avenida Tres de Marco, 511, Alto da Boa Vista, 18087-180, Soracaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Rouxinol, Francisco P.M.; Gelamo, Rogerio V. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Trasferetti, B. Claudio [Present address: Superintendencia Regional da Policia Federal em Sao Paulo, Setor Tecnico-Cientifico, Rua Hugo d' Antola 95/10o Andar, Lapa de Baixo, 05038-090 Sao Paulo, SP (Brazil); Davanzo, C.U. [Instituto de Quimica, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Bica de Moraes, Mario A. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil)

    2008-01-15

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V{sub S}) and of the proportion of TEOS in the mixture (X{sub T}) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V{sub S} and X{sub T} are presented.

  12. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Durrant, Steven F.; Rouxinol, Francisco P.M.; Gelamo, Rogerio V.; Trasferetti, B. Claudio; Davanzo, C.U.; Bica de Moraes, Mario A.

    2008-01-01

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V S ) and of the proportion of TEOS in the mixture (X T ) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V S and X T are presented

  13. Erosion behaviour of physically vapour-deposited and chemically vapour-deposited SiC films coated on molybdenum during oxygenated argon beam thinning

    International Nuclear Information System (INIS)

    Shikama, T.; Kitajima, M.; Fukutomi, M.; Okada, M.

    1984-01-01

    The erosion behaviour during bombardment with a 5 keV argon beam at room temperature was studied for silicon carbide (SiC) films of thickness of about 10 μm coated on molybdenum by physical vapour deposition (PVD) and chemical vapour deposition (CVD). The PVD SiC (plasma-assisted ion plating) exhibited a greater thinning rate than the CVD SiC film. Electron probe X-ray microanalysis revealed that the chemical composition of PVD SiC was changed to a composition enriched in silicon by the bombardment, and there was a notable change in its surface morphology. The CVD SiC retained its initial chemical composition with only a small change in its surface morphology. Auger electron spectroscopy indicated that silicon oxide was formed on the surface of PVD SiC by the bombardment. The greater thinning rate and easier change in chemical composition in PVD SiC could be attributed to its readier chemical reaction with oxygen due to its more non-uniform structure and weaker chemical bonding. Oxygen was present as one of the impurities in the argon beam. (Auth.)

  14. Co3O4 protective coatings prepared by Pulsed Injection Metal Organic Chemical Vapour Deposition

    DEFF Research Database (Denmark)

    Burriel, M.; Garcia, G.; Santiso, J.

    2005-01-01

    of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 degreesC. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects......Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)(3) (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function......, to be used in Intermediate Temperature Solid Oxide Fuel Cells. (C) 2004 Elsevier B.V. All rights reserved....

  15. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  16. Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

    Science.gov (United States)

    Macháč, Petr; Hejna, Ondřej; Slepička, Petr

    2017-01-01

    The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

  17. Pulsed injection metal organic chemical vapour deposition and characterisation of thin CaO films

    International Nuclear Information System (INIS)

    Borges, R.P.; Ferreira, P.; Saraiva, A.; Goncalves, R.; Rosa, M.A.; Goncalves, A.P.; Silva, R.C. da; Magalhaes, S.; Lourenco, M.J.V.; Santos, F.J.V.; Godinho, M.

    2009-01-01

    Thin films of CaO were grown on silicon (Si) and lanthanum aluminate (LaAlO 3 ) substrates by pulsed injection metal-organic chemical vapour deposition in a vertical injection MOCVD system. Growth parameters were systematically varied to study their effect on film growth and quality and to determine the optimal growth conditions for this material. Film quality and growth rate were evaluated by atomic force microscopy, X-ray diffraction and Rutherford Backscattering Spectroscopy measurements. Optimised conditions allowed growing transparent, single phase films textured along the (0 0 l) direction.

  18. Capacitive behavior of Ag doped V2O5 grown by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Vernardou, D.; Marathianou, I.; Katsarakis, N.; Koudoumas, E.; Kazadojev, I.I.; O’Brien, S.; Pemble, M.E.; Povey, I.M.

    2016-01-01

    The growth of silver doped vanadium pentoxide was performed by aerosol assisted chemical vapour deposition and found to be optimal at 450° C. Additionally, an increase in crystallinity and a change in preferred orientation of V 2 O 5 was observed upon increasing the silver content. Silver incorporation also resulted in morphological changes in the thin films from rod to pellet-like structures. For higher silver content films the amount of incorporated charge increased and reversibility and repeatability was demonstrated for 500 cycles. Electrochemical impedance spectroscopy determined that the transfer and diffusion of Li+ ions through the cathode-electrolyte interface was assisted by silver loading, hence, enhancing the capacitive performance.

  19. Thermodynamic analysis of processes proceeding on (111) faces of diamond during chemical vapour deposition

    International Nuclear Information System (INIS)

    Piekarczyk, W.; Prawer, S.

    1992-01-01

    Chemically vapour deposited diamond is commonly synthesized from activated hydrogen-rich, carbon/hydrogen gas mixtures under conditions which should, from a thermodynamic equilibrium point of view, favour the production of graphite. Much remains to be understood about why diamond, and not graphite, forms under these conditions. However, it is well known that the presence of atomic hydrogen, is crucial to the success of diamond deposition. As part of an attempt to better understand the deposition process, a thermodynamic analysis of the process was performed on diamond (111) faces in hydrogen rich environments. It is shown that the key role of atomic hydrogen is to inhibit the reconstruction of the (111) face to an sp 2 -bonded structure, which would provide a template for graphite, rather than diamond formation. The model correctly predicts experimentally determined trends in growth rate and diamond film quality as a function of methane concentration in the stating gas mixture. 17 refs., 4 figs

  20. Field electron emission characteristics of chemical vapour deposition diamond films with controlled sp2 phase concentration

    International Nuclear Information System (INIS)

    Lu, X.; Yang, Q.; Xiao, C.; Hirose, A.

    2008-01-01

    Diamond films were synthesized in a microwave plasma-enhanced chemical vapour deposition reactor. The microstructure and surface morphology of deposited films were characterized by Raman spectroscope and scanning electron microscope. The sp 2 phase concentration in diamond films was varied and its effect on the field electron emission (FEE) properties was investigated. Diamond films deposited under higher methane concentration exhibit better FEE property including lower turn-on electric field and larger emission current. The predominating factor modifying the FEE property is presumed to be the increase of sp 2 phase concentration. The influence of bias voltage on the FEE property of diamond films is not monotonic. Postgrowth acid treatment reduces the sp 2 phase content in diamond films without changing diamond grain sizes. The corresponding FEE property was degraded

  1. Electrical and optical properties of Cu–Cr–O thin films fabricated by chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lunca Popa, P., E-mail: petru.luncapopa@list.lu; Crêpellière, J.; Leturcq, R.; Lenoble, D.

    2016-08-01

    We present electrical and optical properties of CuCrO{sub 2} thin films deposited by chemical vapour deposition, as well as the influence of depositions' parameters on these properties. Oxygen partial pressure and precursor's concentrations have the greatest influence on optical and electrical properties of the films. Values of conductivities ranging from 10{sup −4} to 10 S/cm were obtained using different deposition conditions. The conductivity is thermally activated with an activation energy ranging from 57 to 283 meV. Thermoelectric measurements confirm the p-type conduction, and demonstrate high carrier concentration typical for a degenerate semiconductor. The as-deposited films show a medium degree of crystallinity, a maximum optical transmission up to 80% in the visible range with a corresponding band gap around 3.2 eV. - Highlights: • CuCrO{sub 2} thin films deposited via a new innovative method - DLICVD. • Band gap and electrical conductivity can be tuned by controlling deposition parameters • Key process parameter is the metallic/oxygen atomic ratio involved in the process • Electrical conductivities values spanning 5 orders of magnitudes were obtained using different deposition parameters.

  2. Zinc oxide nanostructures by chemical vapour deposition as anodes for Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Laurenti, M., E-mail: marco.laurenti@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Garino, N. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Porro, S.; Fontana, M. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Gerbaldi, C., E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy)

    2015-08-15

    Highlights: • ZnO nanostructures are grown by simple chemical vapour deposition. • Polycrystalline nanostructured porous thin film is obtained. • Film exhibits stable specific capacity (∼400 mA h g{sup −1}) after prolonged cycling. • CVD-grown ZnO nanostructures show promising prospects as Li-ion battery anode. - Abstract: ZnO nanostructures are grown by a simple chemical vapour deposition method directly on a stainless steel disc current collector and successfully tested in lithium cells. The structural/morphological characterization points out the presence of well-defined polycrystalline nanostructures having different shapes and a preferential orientation along the c-axis direction. In addition, the high active surface of the ZnO nanostructures, which accounts for a large electrode/electrolyte contact area, and the complete wetting with the electrolyte solution are considered to be responsible for the good electrical transport properties and the adequate electrochemical behaviour, as confirmed by cyclic voltammetry and galvanostatic charge/discharge cycling. Indeed, despite no binder or conducting additives are used, when galvanostatically tested in lithium cells, after an initial decay, the ZnO nanostructures can provide a rather stable specific capacity approaching 70 μA h cm{sup −2} (i.e., around 400 mA h g{sup −1}) after prolonged cycling at 1 C, with very high Coulombic efficiency and an overall capacity retention exceeding 62%.

  3. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  4. Chemical vapour deposition - a promising method for production of different kinds of carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Leonhardt, A.; Ritschel, M.; Bartsch, K.; Graff, A.; Taeschner, C.; Fink, J. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany)

    2001-08-01

    Carbon nanostructures (fibres, multi and single walled tubes) have been synthesized by catalytic chemical vapour deposition. The catalyst material, deposition temperature and the used hydrocarbon are the main parameters responsible for the formation of the desired structure. In dependence on these parameters and by optimising the deposition process nanofibres with herringbone structure and tubular multiwalled nanotubes were deposited in large amounts and high purity. In the case of single wall nanotubes synthesis an aftertreatment and process is absolutely necessary to obtain material with high percentage of tubes. Layers of disordered and aligned multiwalled nanotubes were deposited on oxidised silicon substrates coated with thin sputtered metal layers (Co, permalloy) by using the micro-wave assisted plasma CVD process or the bias supported hot filament CVD method. The latter method allows relatively low deposition temperatures (550 - 750 C). The obtained carbon modifications were characterised by scanning and transmission electron microscopy. Furthermore, the electron field emission of the CNT's layers were investigated. (orig.)

  5. Functionalization of Hydrogenated Chemical Vapour Deposition-Grown Graphene by On-Surface Chemical Reactions

    Czech Academy of Sciences Publication Activity Database

    Drogowska, Karolina; Kovaříček, Petr; Kalbáč, Martin

    2017-01-01

    Roč. 23, č. 17 (2017), s. 4022-4022 ISSN 1521-3765 Institutional support: RVO:61388955 Keywords : Chemical vapor deposition * Hydrogenation * Graphene Subject RIV: CF - Physical ; Theoretical Chemistry

  6. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    Science.gov (United States)

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A.; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-03-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

  7. Magnetic and cytotoxic properties of hot-filament chemical vapour deposited diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zanin, Hudson, E-mail: hudsonzanin@gmail.com [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Peterlevitz, Alfredo Carlos; Ceragioli, Helder Jose [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Rodrigues, Ana Amelia; Belangero, William Dias [Laboratorio de Biomateriais em Ortopedia, Faculdade de Ciencias Medicas, Universidade Estadual de Campinas, Rua Cinco de Junho 350 CEP 13083970, Campinas, Sao Paulo (Brazil); Baranauskas, Vitor [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil)

    2012-12-01

    Microcrystalline (MCD) and nanocrystalline (NCD) magnetic diamond samples were produced by hot-filament chemical vapour deposition (HFCVD) on AISI 316 substrates. Energy Dispersive X-ray Spectroscopy (EDS) measurements indicated the presence of Fe, Cr and Ni in the MCD and NCD samples, and all samples showed similar magnetisation properties. Cell viability tests were realised using Vero cells, a type of fibroblastic cell line. Polystyrene was used as a negative control for toxicity (NCT). The cells were cultured under standard cell culture conditions. The proliferation indicated that these magnetic diamond samples were not cytotoxic. - Highlights: Black-Right-Pointing-Pointer Polycrystalline diamonds doped with Fe, Cr and Ni acquire ferromagnetic properties. Black-Right-Pointing-Pointer CVD diamonds have been prepared with magnetic and semiconductor properties. Black-Right-Pointing-Pointer Micro/nanocrystalline diamonds show good cell viability with fibroblast proliferation.

  8. Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

    Directory of Open Access Journals (Sweden)

    Shivan R. Singh

    2010-05-01

    Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

  9. Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

    International Nuclear Information System (INIS)

    Yu Dongqi; Hu Lizhong; Qiao Shuangshuang; Zhang Heqiu; Fu Qiang; Chen Xi; Sun Kaitong; Len, Song-En Andy; Len, L K

    2009-01-01

    Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P 2 O 5 ) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

  10. Preparation of carbon nanotubes with different morphology by microwave plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M. [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan); Mansurov, Zulkhair [Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Tokmoldin, S.Zh. [Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan)

    2010-04-15

    In this work we present a part of our results about the preparation of carbon nanotube with different morphologies by using microwave plasma enhanced chemical vapour deposition MPECVD. Well aligned, curly, carbon nanosheets, coiled carbon sheets and carbon microcoils have been prepared. We have investigated the effect of the different growth condition parameters such as the growth temperature, pressure and the hydrogen to methane flow rate ratio on the morphology of the carbon nanotubes. The results showed that there is a great dependence of the morphology of carbon nanotubes on these parameters. The yield of the carbon microcoils was high when the growth temperature was 700 C. There is a linear relation between the growth rate and the methane to hydrogen ratio. The effect of the gas pressure on the CNTs was also studied. Our samples were investigated by scanning electron microscope and Raman spectroscopy (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Sharma

    2014-01-01

    Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

  12. Optimization of solar cell performance using atmospheric pressure chemical vapour deposition deposited TCOs

    Czech Academy of Sciences Publication Activity Database

    Yates, H.M.; Evans, P.; Sheel, D.W.; Hodgkinson, J.L.; Sheel, P.; Dagkaldiran, U.; Gordijn, A.; Finger, F.; Remeš, Zdeněk; Vaněček, Milan

    2009-01-01

    Roč. 25, č. 8 (2009), s. 789-796 ISSN 1938-5862. [International Chemical Vapor Deposition Symposium (CVD-XVII) /17./. Wien, 04.10.2009-09.10.2009] Grant - others:European Community(XE) Project (STREP) of the 6. FP Institutional research plan: CEZ:AV0Z10100521 Keywords : solar cells * TCO * CVD Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Probing the Gas-Phase Dynamics of Graphene Chemical Vapour Deposition using in-situ UV Absorption Spectroscopy

    DEFF Research Database (Denmark)

    Shivayogimath, Abhay; Mackenzie, David; Luo, Birong

    2017-01-01

    The processes governing multilayer nucleation in the chemical vapour deposition (CVD) of graphene are important for obtaining high-quality monolayer sheets, but remain poorly understood. Here we show that higher-order carbon species in the gas-phase play a major role in multilayer nucleation...

  14. Characterization of chemical vapour deposited diamond films: correlation between hydrogen incorporation and film morphology and quality

    International Nuclear Information System (INIS)

    Tang, C J; Neves, A J; Carmo, M C

    2005-01-01

    In order to tailor diamond synthesized through chemical vapour deposition (CVD) for different applications, many diamond films of different colours and variable quality were deposited by a 5 kW microwave plasma CVD reactor under different growth conditions. The morphology, quality and hydrogen incorporation of these films were characterized using scanning electron microscopy (SEM), Raman and Fourier-transform infrared (FTIR) spectroscopy, respectively. From this study, a general trend between hydrogen incorporation and film colour, morphology and quality was found. That is, as the films sorted by colour gradually become darker, ranging from white through grey to black, high magnification SEM images illustrate that the smoothness of the well defined crystalline facet gradually decreases and second nucleation starts to appear on it, indicating gradual degradation of the crystalline quality. Correspondingly, Raman spectra evidence that the diamond Raman peak at 1332 cm -1 becomes broader and the non-diamond carbon band around 1500 cm -1 starts to appear and becomes stronger, confirming increase of the non-diamond component and decrease of the phase purity of the film, while FTIR spectra show that the CH stretching band and the two CVD diamond specific peaks around 2830 cm -1 rise rapidly, and this indicates that the total amount of hydrogen incorporated into the film increases significantly

  15. Hybrid chemical vapour and nanoceramic aerosol assisted deposition for multifunctional nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Warwick, Michael E.A.; Dunnill, Charles W.; Goodall, Josie; Darr, Jawwad A.; Binions, Russell, E-mail: uccarbi@ucl.ac.uk

    2011-07-01

    Hybrid atmospheric pressure chemical vapour and aerosol assisted deposition via the reaction of vanadium acetylacetonate and a suspension of preformed titanium dioxide or cerium dioxide nanoparticles, led to the production of vanadium dioxide nanocomposite thin films on glass substrates. The preformed nanoparticle oxides used for the aerosol were synthesised using a continuous hydrothermal flow synthesis route involving the rapid reaction of a metal salt solution with a flow of supercritical water in a flow reactor. Multifunctional nanocomposite thin films from the hybrid deposition process were characterised using scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The functional properties of the films were evaluated using variable temperature optical measurements to assess thermochromic behaviour and methylene blue photodecolourisation experiments to assess photocatalytic activity. The tests show that the films are multifunctional in that they are thermochromic (having a large change in infra-red reflectivity upon exceeding the thermochromic transition temperature) and have significant photocatalytic activity under irradiation with 254 nm light.

  16. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    S. Karamat

    2015-08-01

    Full Text Available The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM value of 30 cm−1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm−1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm−1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm−1 as compare to single layer graphene

  17. Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

    CERN Document Server

    Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

    2002-01-01

    The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

  18. Nano sized bismuth oxy chloride by metal organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jagdale, Pravin, E-mail: pravin.jagdale@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy); Castellino, Micaela [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Marrec, Françoise [Laboratory of Condensed Matter Physics, University of Picardie Jules Verne (UPJV), Amiens 80039 (France); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexicom (UNAM), Mexico D.F. 04510 (Mexico); Tagliaferro, Alberto [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy)

    2014-06-01

    Metal organic chemical vapour deposition (MOCVD) method was used to prepare thin films of bismuth based nano particles starting from bismuth salts. Nano sized bismuth oxy chloride (BiOCl) crystals were synthesized from solution containing bismuth chloride (BiCl{sub 3}) in acetone (CH{sub 3}-CO-CH{sub 3}). Self-assembly of nano sized BiOCl crystals were observed on the surface of silicon, fused silica, copper, carbon nanotubes and aluminium substrates. Various synthesis parameters and their significant impact onto the formation of self-assembled nano-crystalline BiOCl were investigated. BiOCl nano particles were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and Micro-Raman spectroscopy. These analyses confirm that bismuth nanometer-sized crystal structures showing a single tetragonal phase were indeed bismuth oxy chloride (BiOCl) square platelets 18–250 nm thick and a few micrometres wide.

  19. Investigation of the nucleation process of chemical vapour deposited diamond films

    International Nuclear Information System (INIS)

    Katai, S.

    2001-01-01

    The primary aim of this work was to contribute to the understanding of the bias enhanced nucleation (BEN) process during the chemical vapour deposition (CVD) of diamond on silicon. The investigation of both the gas phase environment above the substrate surface, by in situ mass selective energy analysis of ions, and of the surface composition and structure by in vacuo surface analytic methods (XPS, EELS) have been carried out. In both cases, the implementation of these measurements required the development and construction of special experimental apparatus as well. The secondary aim of this work was to give orientation to our long term goal of growing diamond films with improved quality. For this reason, (1) contaminant levels at the diamond-silicon interface after growth were studied by SIMS, (2) the internal stress distribution of highly oriented free-standing diamond films were studied by Raman spectroscopy, and (3) an attempt was made to produce spatially regular oriented nuclei formation by nucleating on a pattern created by laser treatment on silicon substrates. (orig.)

  20. Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition

    International Nuclear Information System (INIS)

    David, C; Girardeau, T; Paumier, F; Eyidi, D; Guerin, P; Marteau, M; Lacroix, B; Papathanasiou, N; Tinkham, B P

    2011-01-01

    Zinc oxide (ZnO) thin films have attracted much attention in recent years due to progress in crystal growth for a large variety of technological applications including optoelectronics and transparent electrodes in solar cells. Boron (B)-doped ZnO thin films are deposited by low pressure chemical vapour deposition (LPCVD) on Si(100). These films exhibit a strong (002) texture with a pyramidal grain structure. The ZnO films were annealed after growth; the annealing temperature and the atmosphere appear to strongly impact the layer conductivity. This work will first present the modification of the physical properties (carrier concentration, mobility) extracted from the simulation of layer reflection in the infrared range. At low annealing temperatures the mobility increases slightly before decreasing drastically above a temperature close to 250 deg. C. The chemical and structural evolution (XPS, x-ray diffraction) of the films was also studied to identify the relationship between microstructural modifications and the variations observed in the film conductivity. An in situ XRD study during annealing has been performed under air and low pressure conditions. As observed for electrical properties, the microstructural modifications shift to higher temperatures for vacuum annealing.

  1. Multilayer graphene growth on polar dielectric substrates using chemical vapour deposition

    Science.gov (United States)

    Karamat, S.; Çelik, K.; Shah Zaman, S.; Oral, A.

    2018-06-01

    High quality of graphene is necessary for its applications at industrial scale production. The most convenient way is its direct growth on dielectrics which avoid the transfer route of graphene from metal to dielectric substrate usually followed by graphene community. The choice of a suitable dielectric for the gate material which can replace silicon dioxide (SiO2) is in high demand. Various properties like permittivity, thermodynamic stability, film morphology, interface quality, bandgap and band alignment of other dielectrics with graphene needs more exploration. A potential dielectric material is required which could be used to grow graphene with all these qualities. Direct growth of graphene on magnesium oxide (MgO) substrates is an interesting idea and will be a new addition in the library of 2D materials. The present work is about the direct growth of graphene on MgO substrates by an ambient pressure chemical vapour deposition (CVD) method. We address the surface instability issue of the polar oxides which is the most challenging factor in MgO. Atomic force microscopy (AFM) measurements showed the topographical features of the graphene coated on MgO. X-ray photoelectron spectroscopy (XPS) study is carried out to extract information regarding the presence of necessary elements, their bonding with substrates and to confirm the sp-2 hybridization of carbon, which is a characteristic feature of graphene film. The chemical shift is due to the surface reconstruction of MgO in the prepared samples. For graphene-MgO interface, valence band offset (VBO) and conduction band offset (CBO) extracted from valence band spectra reported. Further, we predicted the energy band diagram for single layer and thin film of graphene. By using the room-temperature energy band gap values of MgO and graphene, the CBO is calculated to be 6.85 eV for single layer and 5.66 eV for few layer (1-3) of graphene layers.

  2. A comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films

    International Nuclear Information System (INIS)

    Garnier, Jerome; Bouteville, Anne; Hamilton, Jeff; Pemble, Martyn E.; Povey, Ian M.

    2009-01-01

    Two different methods of spray chemical vapour deposition have been used to grow ZnO thin films on glass substrates from zinc acetate solution over the temperature range 400 o C to 550 o C. The first of these is named InfraRed Assisted Spray Chemical Vapour Deposition (IRAS-CVD). This method uses intense IR radiation to heat not only the substrate but also the gaseous species entering the reactor. The second method is a more conventional approach known simply as ultrasonic spray CVD, which utilises IR lamps to heat the substrate only. By way of comparing these two approaches we present data obtained from contact angle measurements, crystallinity and mean crystallite size, photoluminescence, electrical and optical properties. Additionally we have examined the role of annealing within the IRAS-CVD reactor environment.

  3. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

    Czech Academy of Sciences Publication Activity Database

    Schäfer, J.; Fricke, K.; Mika, Filip; Pokorná, Zuzana; Zajíčková, L.; Foest, R.

    2017-01-01

    Roč. 630, MAY 30 (2017), s. 71-78 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : plasma jet * liquid assisted plasma enhanced chemical * vapour deposition * silicon oxide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Coating and films Impact factor: 1.879, year: 2016

  4. The thermodynamic approach to boron chemical vapour deposition based on a computer minimization of the total Gibbs free energy

    International Nuclear Information System (INIS)

    Naslain, R.; Thebault, J.; Hagenmuller, P.; Bernard, C.

    1979-01-01

    A thermodynamic approach based on the minimization of the total Gibbs free energy of the system is used to study the chemical vapour deposition (CVD) of boron from BCl 3 -H 2 or BBr 3 -H 2 mixtures on various types of substrates (at 1000 < T< 1900 K and 1 atm). In this approach it is assumed that states close to equilibrium are reached in the boron CVD apparatus. (Auth.)

  5. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    International Nuclear Information System (INIS)

    Park, Joong-Hyun; Han, Sang-Myeon; Park, Sang-Geun; Han, Min-Koo; Shin, Moon-Young

    2006-01-01

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN X ) and silicon dioxide (SiO 2 ), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN X buffer layer is wider than SiO 2 and the maximum grain size slightly increased

  6. Coordination number constraint models for hydrogenated amorphous Si deposited by catalytic chemical vapour deposition

    Science.gov (United States)

    Kawahara, Toshio; Tabuchi, Norikazu; Arai, Takashi; Sato, Yoshikazu; Morimoto, Jun; Matsumura, Hideki

    2005-02-01

    We measured structure factors of hydrogenated amorphous Si by x-ray diffraction and analysed the obtained structures using a reverse Monte Carlo (RMC) technique. A small shoulder in the measured structure factor S(Q) was observed on the larger Q side of the first peak. The RMC results with an unconstrained model did not clearly show the small shoulder. Adding constraints for coordination numbers 2 and 3, the small shoulder was reproduced and the agreement with the experimental data became better. The ratio of the constrained coordination numbers was consistent with the ratio of Si-H and Si-H2 bonds which was estimated by the Fourier transformed infrared spectra of the same sample. This shoulder and the oscillation of the corresponding pair distribution function g(r) at large r seem to be related to the low randomness of cat-CVD deposited a-Si:H.

  7. Coordination number constraint models for hydrogenated amorphous Si deposited by catalytic chemical vapour deposition

    International Nuclear Information System (INIS)

    Kawahara, Toshio; Tabuchi, Norikazu; Arai, Takashi; Sato, Yoshikazu; Morimoto, Jun; Matsumura, Hideki

    2005-01-01

    We measured structure factors of hydrogenated amorphous Si by x-ray diffraction and analysed the obtained structures using a reverse Monte Carlo (RMC) technique. A small shoulder in the measured structure factor S(Q) was observed on the larger Q side of the first peak. The RMC results with an unconstrained model did not clearly show the small shoulder. Adding constraints for coordination numbers 2 and 3, the small shoulder was reproduced and the agreement with the experimental data became better. The ratio of the constrained coordination numbers was consistent with the ratio of Si-H and Si-H 2 bonds which was estimated by the Fourier transformed infrared spectra of the same sample. This shoulder and the oscillation of the corresponding pair distribution function g(r) at large r seem to be related to the low randomness of cat-CVD deposited a-Si:H

  8. Nanoparticulate cerium dioxide and cerium dioxide-titanium dioxide composite thin films on glass by aerosol assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Qureshi, Uzma; Dunnill, Charles W.; Parkin, Ivan P.

    2009-01-01

    Two series of composite thin films were deposited on glass by aerosol assisted chemical vapour deposition (AACVD)-nanoparticulate cerium dioxide and nanoparticulate cerium dioxide embedded in a titanium dioxide matrix. The films were analysed by a range of techniques including UV-visible absorption spectroscopy, X-ray diffraction, scanning electron microscopy and energy dispersive analysis by X-rays. The AACVD prepared films showed the functional properties of photocatalysis and super-hydrophilicity. The CeO 2 nanoparticle thin films displaying photocatalysis and photo-induced hydrophilicity almost comparable to that of anatase titania.

  9. Physical and optical characterisation of carbon-silicon layers produced by rapid thermal chemical vapour deposition

    International Nuclear Information System (INIS)

    McBride, G.M.

    1994-04-01

    The Quplas II reactor is a novel chemical vapour deposition (CVD) system, which was recently designed and built at The Queen's University of Belfast. The system was intended to produce layers of Silicon (Si) for application in advanced bipolar transistor manufacture. It became clear that the system was capable of depositing novel materials such as Silicon-Carbon (Si-C) films which could have application as the emitter material in heterojunction bipolar transistors (HBT's) formed on silicon substrates. This work focuses mainly on the development of analytical techniques to allow characterisation of the deposited layers of Si-C and permit optimisation of both the process conditions and the deposition system. The techniques that were developed to characterise the Si-C films in terms of their physical and optical properties included: Secondary Ion Mass Spectroscopy (SIMS), X-Ray Diffractometry (XRD), Transmission and Scanning Electron Microscopy (TEM and SEM), Near Infrared (NIR) and Ultraviolet/Visible/Near Infrared (UV/VIS/NIR) Spectroscopy. From assessing the data obtained from the analysis of the samples using the techniques mentioned above, it was possible to characterise the Si-C films in terms of: stoichiometry, crystallinity, degree of oxygen contamination, thickness, optical roughness of the film/air and film/substrate interfaces, and energy bandgap. In the fabrication of Si-C films it was found to be necessary to use low process pressures in order to ensure that the film deposition was slow enough to allow for a more ordered growth process. This led to the formation of polycrystalline Si-C films which had greatly reduced levels of oxygen compared to earlier amorphous films. In addition the polycrystalline Si-C films tended to have optically rough film/air and film/substrate interfaces. For most samples it was possible to obtain the thickness of their Si-C films from their SIMS profiles. Based on the method of interferometry, the thickness of the Si-C films

  10. Chemical vapour deposition of silicon under reduced pressure in a hot-wall reactor: Equilibrium and kinetics

    International Nuclear Information System (INIS)

    Langlais, F.; Hottier, F.; Cadoret, R.

    1982-01-01

    Silicon chemical vapour deposition (SiH 2 Cl 2 /H 2 system), under reduced pressure conditions, in a hot-wall reactor, is presented. The vapour phase composition is assessed by evaluating two distinct equilibria. The homogeneous equilibrium , which assumes that the vapour phase is not in equilibrium with solid silicon, is thought to give an adequate description of the vapour phase in the case of low pressure, high gas velocities, good temperature homogeneity conditions. A comparison with heterogeneous equilibrium enables us to calculate the supersaturation so evidencing a highly irreversible growth system. The experimental determination of the growth rates reveals two distinct temperature ranges: below 1000 0 C, polycrystalline films are usually obtained with a thermally activated growth rate (+40 kcal mole -1 ) and a reaction order, with respect to the predominant species SiCl 2 , close to one; above 1000 0 C, the films are always monocrystalline and their growth rate exhibits a much lower or even negative activation energy, the reaction order in SiCl 2 remaining about one. (orig.)

  11. Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

    2016-10-01

    TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

  12. Atmospheric pressure chemical vapour deposition of the nitrides and oxynitrides of vanadium, titanium and chromium

    International Nuclear Information System (INIS)

    Elwin, G.S.

    1999-01-01

    A study has been made into the atmospheric pressure chemical vapour deposition of nitrides and oxynitrides of vanadium, titanium and chromium. Vanadium tetrachloride, vanadium oxychloride, chromyl chloride and titanium tetrachloride have been used as precursors with ammonia, at different flow conditions and temperatures. Vanadium nitride, vanadium oxynitride, chromium oxynitride, titanium/vanadium nitride and titanium/chromium oxynitride have been deposited as thin films on glass. The APCVD reaction of VCl 4 and ammonia leads to films with general composition VN x O y . By raising the ammonia concentration so that it is in excess (0.42 dm 3 min -1 VCl 4 with 1.0 dm 3 min -1 NH 3 at 500 deg. C) a film has been deposited with the composition VN 0.8 O 0.2 . Further investigation discovered similar elemental compositions could be reached by deposition at 350 deg. C (0.42 dm 3 min -1 VCl 4 with 0.5 dm 3 min -1 NH 3 ), followed by annealing at 650 deg. C, and cooled under a flow of ammonia. Only films formed below 400 deg. C were found to contain carbon or chlorine ( 3 and ammonia also lead to films of composition VN x O y the oxygen to nitrogen ratios depending on the deposition conditions. The reaction Of VOCl 3 (0.42 dm 3 min -1 ) and ammonia (0.2 dm 3 min -1 ) at 500 deg. C lead to a film of composition VN 0. 47O 1.06 . The reaction of VOCl 3 (0.42 dm 3 min -1 ) and ammonia (0.5 dm 3 min -1 ) at 650 deg. C lead to a film of composition VN 0.63 O 0.41 . The reaction of chromyl chloride with excess ammonia led to the formation of chromium oxide (Cr 2 O 3 ) films. Mixed metal films were prepared from the reactions of vanadium tetrachloride, titanium tetrachloride and ammonia to prepare V x Ti y N z and chromyl chloride, titanium tetrachloride and ammonia to form TiCr x O y N z . Both reactions produced the intended mixed coating but it was found that the vanadium / titanium nitride contained around 10 % vanadium whatever the conditions used. Oxygen contamination

  13. Properties of alumina films prepared by metal-organic chemical vapour deposition at atmospheric pressure in hte presence of small amounts of water

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Haanappel, V.A.C.; van Corbach, H.D.; Rem, J.B.; Fransen, T.; Gellings, P.J.

    1995-01-01

    Thin alumina films were deposited on stainless steel, type AISI 304. The deposition process was carried out in nitrogen with low partial pressures of water (0–2.6 × 10−2 kPa (0−0.20 mmHg)) by metal-organic chemical vapour deposition (MOCVD) with aluminium-tri-sec-butoxide (ATSB) as the precursor.

  14. LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition

    Czech Academy of Sciences Publication Activity Database

    Stuchlík, Jiří; Ledinský, Martin; Honda, Shinya; Drbohlav, Ivo; Mates, Tomáš; Fejfar, Antonín; Hruška, Karel; Stuchlíková, The-Ha; Kočka, Jan

    2009-01-01

    Roč. 517, č. 24 (2009), s. 6829-6832 ISSN 0040-6090 R&D Projects: GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠk LC510; GA AV ČR IAA1010413 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous hydrogenated silicon * atomic force microscopy * plasma-enhanced chemical vapour deposition, * nucleation * Raman scattering * lithium fluoride Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.727, year: 2009

  15. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Bollani, M; Fedorov, A; Chrastina, D; Sordan, R; Picco, A; Bonera, E

    2010-01-01

    Si 1-x Ge x islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si 1-x Ge x islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s -1 ) and low temperature (650 deg. C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

  16. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

    Science.gov (United States)

    Bollani, M; Chrastina, D; Fedorov, A; Sordan, R; Picco, A; Bonera, E

    2010-11-26

    Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

  17. In situ growth rate measurements during plasma-enhanced chemical vapour deposition of vertically aligned multiwall carbon nanotube films

    International Nuclear Information System (INIS)

    Joensson, M; Nerushev, O A; Campbell, E E B

    2007-01-01

    In situ laser reflectivity measurements are used to monitor the growth of multiwalled carbon nanotube (MWCNT) films grown by DC plasma-enhanced chemical vapour deposition (PECVD) from an iron catalyst film deposited on a silicon wafer. In contrast to thermal CVD growth, there is no initial increase in the growth rate; instead, the initial growth rate is high (as much as 10 μm min -1 ) and then drops off rapidly to reach a steady level (2 μm min -1 ) for times beyond 1 min. We show that a limiting factor for growing thick films of multiwalled nanotubes (MWNTs) using PECVD can be the formation of an amorphous carbon layer at the top of the growing nanotubes. In situ reflectivity measurements provide a convenient technique for detecting the onset of the growth of this layer

  18. Characterization of thin TiO2 films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications

    International Nuclear Information System (INIS)

    Sobczyk-Guzenda, A.; Gazicki-Lipman, M.; Szymanowski, H.; Kowalski, J.; Wojciechowski, P.; Halamus, T.; Tracz, A.

    2009-01-01

    Thin titanium oxide films were deposited using a radio frequency (RF) plasma enhanced chemical vapour deposition method. Their optical properties and thickness were determined by means of ultraviolet-visible absorption spectrophotometry. Films of the optical parameters very close to those of titanium dioxide have been obtained at the high RF power input. Their optical quality is high enough to allow for their use in a construction of stack interference optical filters. At the same time, these materials exhibit strong photocatalytic effects. The results of structural analysis, carried out by Raman Shift Spectroscopy, show that the coatings posses amorphous structure. However, Raman spectra of the same films subjected to thermal annealing at 450 o C disclose an appearance of a crystalline form, namely that of anatase. Surface morphology of the films has also been characterized by Atomic Force Microscopy revealing granular, broccoli-like topography of the films.

  19. Fabrication of nanostructured clay-carbon nanotube hybrid nanofiller by chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Manikandan, Dhanagopal, E-mail: dmani_cat@yahoo.co.in [Department of Materials Engineering, Faculty of Engineering, University of Concepcion, Concepcion (Chile); Mangalaraja, Ramalinga Viswanathan, E-mail: mangal@udec.cl [Department of Materials Engineering, Faculty of Engineering, University of Concepcion, Concepcion (Chile); Siddheswaran, Rajendran [Department of Materials Engineering, Faculty of Engineering, University of Concepcion, Concepcion (Chile); Avila, Ricardo E. [Personal Dosimetry Section, Chilean Nuclear Energy Commission, Santiago (Chile); Ananthakumar, Solaiappan [Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIIST), Trivandrum, Kerala (India)

    2012-03-01

    Growth of multiwalled carbon nanotube (CNT) assemblies by chemical vapour decomposition (CVD) technique was achieved through decomposition of acetylene using iron impregnated montmorillonite (MM) catalysts. Various amounts of iron loaded montmorillonite catalysts were prepared by wet impregnation method and calcined at 450 Degree-Sign C. The catalysts were subjected to X-ray diffraction (XRD) and surface area analyses. Acetylene decomposition at a feed ratio of N{sub 2}:H{sub 2}:C{sub 2}H{sub 2} = 1:1:0.18 was conducted in the presence of iron impregnated montmorillonite catalysts in the CVD reactor for the growth of CNT structures. The role of Fe-activated clay catalyst on the formation of CNT structures has been systematically examined at various temperatures and correlated with the morphological features of CNTs. Catalyst assisted acetylene decomposition results the formation of different carbon nanostructures such as nanotubes, nanofibres and nanoflakes. These clay-CNT products were characterised for their morphological, thermal, qualitative and quantitative analyses. The morphological variations of CNT assemblies reveal Fe-montmorillonite catalysts have high selectivity at given reaction conditions. Thermogravimetric and Raman spectral analyses prove that the CNTs contain a good crystallanity and less structural defects.

  20. Fabrication of nanostructured clay-carbon nanotube hybrid nanofiller by chemical vapour deposition

    International Nuclear Information System (INIS)

    Manikandan, Dhanagopal; Mangalaraja, Ramalinga Viswanathan; Siddheswaran, Rajendran; Avila, Ricardo E.; Ananthakumar, Solaiappan

    2012-01-01

    Growth of multiwalled carbon nanotube (CNT) assemblies by chemical vapour decomposition (CVD) technique was achieved through decomposition of acetylene using iron impregnated montmorillonite (MM) catalysts. Various amounts of iron loaded montmorillonite catalysts were prepared by wet impregnation method and calcined at 450 °C. The catalysts were subjected to X-ray diffraction (XRD) and surface area analyses. Acetylene decomposition at a feed ratio of N 2 :H 2 :C 2 H 2 = 1:1:0.18 was conducted in the presence of iron impregnated montmorillonite catalysts in the CVD reactor for the growth of CNT structures. The role of Fe-activated clay catalyst on the formation of CNT structures has been systematically examined at various temperatures and correlated with the morphological features of CNTs. Catalyst assisted acetylene decomposition results the formation of different carbon nanostructures such as nanotubes, nanofibres and nanoflakes. These clay-CNT products were characterised for their morphological, thermal, qualitative and quantitative analyses. The morphological variations of CNT assemblies reveal Fe-montmorillonite catalysts have high selectivity at given reaction conditions. Thermogravimetric and Raman spectral analyses prove that the CNTs contain a good crystallanity and less structural defects.

  1. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    Ana Amélia Rodrigues

    2013-02-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  2. Gold catalytic Growth of Germanium Nanowires by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    M. Zahedifar

    2013-03-01

    Full Text Available Germanium nanowires (GeNWs were synthesized using chemical vapor deposition (CVD based on vapor–liquid–solid (VLS mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4 as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal solution, which resulted in Au nanoparticles with different sizes. GeNWs were synthesized at 400 °C, which is a low temperature for electrical device fabrication. Effect of different parameters such as Au nanoparticles size, carrier gas (Ar flow and mixture of H2 with the carrier gas on GeNWs diameter and shape was studied by SEM images. The chemical composition of the nanostructure was also examined by energy dispersive X-ray spectroscopy (EDS.

  3. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

    2010-12-15

    In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

  4. Synthesis of suspended carbon nanotubes on silicon inverse-opal structures by laser-assisted chemical vapour deposition

    International Nuclear Information System (INIS)

    Shi, J; Lu, Y F; Wang, H; Yi, K J; Lin, Y S; Zhang, R; Liou, S H

    2006-01-01

    Suspended single-walled carbon nanotubes (SWNTs) have been synthesized on Si inverse-opal structures by laser-assisted chemical vapour deposition (LCVD). A CW CO 2 laser at 10.6 μm was used to directly irradiate the substrates during the LCVD process. At a laser power density of 14.3 MW m -2 , suspended SWNT networks were found predominantly rooted at the sharp edges in the Si inverse-opal structures. Raman spectroscopy indicated that the SWNT networks were composed of high-quality defect-free SWNTs with an average diameter of 1.3 nm. At a lower laser power density (6.4 MW m -2 ), multi-walled carbon nanotubes (MWNTs) were grown on the entire surface of the substrates. The preference for the synthesis of SWNTs or MWNTs was attributed to the difference in the catalyst sizes as well as the growth temperature in the LCVD process

  5. Direct fabrication of a W-C SNS Josephson junction using focused-ion-beam chemical vapour deposition

    International Nuclear Information System (INIS)

    Dai, Jun; Kometani, Reo; Ishihara, Sunao; Warisawa, Shin’ichi; Onomitsu, Koji; Krockenberger, Yoshiharu; Yamaguchi, Hiroshi

    2014-01-01

    A tungsten-carbide (W-C) superconductor/normal metal/superconductor (SNS) Josephson junction has been fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). Under certain process conditions, the component ratio has been tuned from W: C: Ga = 26%: 66%: 8% in the superconducting wires to W: C: Ga = 14%: 79%: 7% in the metallic junction. The critical current density at 2.5 K in the SNS Josephson junction is 1/3 of that in W-C superconducting nanowire. Also, a Fraunhofer-like oscillation of critical current in the junction with four periods is observed. FIB-CVD opens avenues for novel functional superconducting nanodevices. (paper)

  6. Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Jones, B. J.; Nelson, N.

    2016-10-01

    This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp2/sp3 ratio (graphitic/diamond-like bonding ratio) and sp2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions.

  7. Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Jones, B J; Nelson, N

    2016-01-01

    This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp 2 /sp 3 ratio (graphitic/diamond-like bonding ratio) and sp 2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions. (paper)

  8. Transport properties of field effect transistors with randomly networked single walled carbon nanotubes grown by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Park, Wanjun

    2009-01-01

    The transport properties of randomly networked single walled carbon nanotube (SWNT) transistors with different channel lengths of L c = 2-10 μm were investigated. Randomly networked SWNTs were directly grown for the two different densities of ρ ∼ 25 μm -2 and ρ ∼ 50 μm -2 by water plasma enhanced chemical vapour deposition. The field effect transport is governed mainly by formation of the current paths that is related to the nanotube density. On the other hand, the off-state conductivity deviates from linear dependence for both nanotube density and channel length. The field effect mobility of holes is estimated as 4-13 cm 2 V -1 s -1 for the nanotube transistors based on the simple MOS theory. The mobility is increased for the higher density without meaningful dependence on the channel lengths.

  9. Cr2O3 thin films grown at room temperature by low pressure laser chemical vapour deposition

    International Nuclear Information System (INIS)

    Sousa, P.M.; Silvestre, A.J.; Conde, O.

    2011-01-01

    Chromia (Cr 2 O 3 ) has been extensively explored for the purpose of developing widespread industrial applications, owing to the convergence of a variety of mechanical, physical and chemical properties in one single oxide material. Various methods have been used for large area synthesis of Cr 2 O 3 films. However, for selective area growth and growth on thermally sensitive materials, laser-assisted chemical vapour deposition (LCVD) can be applied advantageously. Here we report on the growth of single layers of pure Cr 2 O 3 onto sapphire substrates at room temperature by low pressure photolytic LCVD, using UV laser radiation and Cr(CO) 6 as chromium precursor. The feasibility of the LCVD technique to access selective area deposition of chromia thin films is demonstrated. Best results were obtained for a laser fluence of 120 mJ cm -2 and a partial pressure ratio of O 2 to Cr(CO) 6 of 1.0. Samples grown with these experimental parameters are polycrystalline and their microstructure is characterised by a high density of particles whose size follows a lognormal distribution. Deposition rates of 0.1 nm s -1 and mean particle sizes of 1.85 μm were measured for these films.

  10. Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma-enhanced chemical vapour deposition system

    Czech Academy of Sciences Publication Activity Database

    Taylor, Andrew; Ashcheulov, Petr; Čada, Martin; Fekete, Ladislav; Hubík, Pavel; Klimša, Ladislav; Olejníček, Jiří; Remeš, Zdeněk; Jirka, Ivan; Janíček, P.; Bedel-Pereira, E.; Kopeček, Jaromír; Mistrík, J.; Mortet, Vincent

    2015-01-01

    Roč. 212, č. 11 (2015), s. 2418-2423 ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * electrical conductivity * nanocrystalline materials * optical emission spectroscopy * plasma enhanced chemical vapour deposition * SiC Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

  11. Studies of internal stress in diamond films prepared by DC plasma chemical vapour deposition

    International Nuclear Information System (INIS)

    Wang Wanlu; Gao Jinying; Liao Kejun; Liu Anmin

    1992-01-01

    The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature. Experimental results have shown that total stress in diamond thin films is sensitive to the deposition conditions. The results also indicate that the compressive stress can be explained in terms of amorphous state carbon and hydrogen, and tensile stress is ascribed to the grain boundary relaxation model due to high internal surface area and microstructure with voids

  12. The volatile pivalates of Y, Ba and Cu as prospective precursors for metal-organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iljina, E. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Korjeva, A. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Kuzmina, N. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Troyanov, S. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Dunaeva, K. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Martynenko, L. (Dept. of Chemistry, Moscow State Univ. (Russian Federation))

    1993-04-15

    The volatile pivalates of Y, Ba and Cu were synthesized and characterized by chemical and thermogravimetric analysis, IR spectroscopy, X-ray diffraction and mass spectrometry. The volatilities of metal pivalates was studied; the vapour pressures, thermodynamic characteristics and rates of sublimation were investigated. The volatile pivalates of Y, Ba and Cu are new prospective accessible compounds. (orig.)

  13. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Roro, K T; Dangbegnon, J K; Sivaraya, S; Westraadt, J E; Neethling, J H; Leitch, A W R; Botha, J R; Kassier, G H

    2008-01-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm 2 V −1 s −1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 10 17 cm −3 , as well as a total acceptor concentration of mid-10 15 cm −3 . Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

  14. Electrografting and morphological studies of chemical vapour deposition grown graphene sheets modified by electroreduction of aryldiazonium salts

    International Nuclear Information System (INIS)

    Mooste, Marek; Kibena, Elo; Kozlova, Jekaterina; Marandi, Margus; Matisen, Leonard; Niilisk, Ahti; Sammelselg, Väino; Tammeveski, Kaido

    2015-01-01

    Highlights: • CVD-grown graphene sheets were electrografted with various aryldiazonium salts • Redox grafting was applied to form thick nitrophenyl films • The reduction of the released radicals was in evidence during the redox grafting • Multilayer formation on CVD graphene was confirmed by XPS and AFM measurements • Thickness of different aryl layers on CVD graphene varied from few to 30 nm - Abstract: This work focuses on investigating the electrografting of chemical vapour deposition (CVD) graphene electrodes grown onto Ni foil (Ni/Gra) with different diazonium salts (including azobenzene diazonium tetrafluoroborate, Fast Garnet GBC sulphate salt, Fast Black K salt, 4-bromobenzene diazonium tetrafluoroborate and 4-nitrobenzenediazonium tetrafluoroborate). Various grafting conditions (e.g. “normal” electrografting in the narrow potential range and redox grafting in the wider potential range) were used. The electrochemical grafting behaviour was similar for all diazonium compounds used, except for the 4-nitrobenzenediazonium tetrafluoroborate when redox grafting was applied. The X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy results confirmed the presence of the corresponding aryl layers on Ni/Gra surfaces. The formation of multilayers on Ni/Gra substrates was in evidence since the thickness of different aryl layers varied from few to 30 nm depending on the modification procedures as well as the diazonium compounds used and the XPS analysis revealed a peak at about 400 eV for all aryl-modified Ni/Gra samples suggesting the multilayer formation also through azo linkages

  15. Direct synthesis of solid and hollow carbon nanospheres over NaCl crystals using acetylene by chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chandra Kishore, S.; Anandhakumar, S.; Sasidharan, M., E-mail: sasidharan.m@res.srmuniv.ac.in

    2017-04-01

    Highlights: • Hollow and solid carbon nanospheres were synthesized by CVD method. • NaCl was used as template for direct growth of carbon nanospheres. • Separation of NaCl from the mixture is made easy by dissolving in water. • The hollow carbon nanospheres exhibit high specific capacity in Li-ion batteries than the graphite anodes. - Abstract: Carbon nanospheres (CNS) with hollow and solid morphologies have been synthesised by a simple chemical vapour deposition method using acetylene as a carbon precursor. Sodium chloride (NaCl) powder as a template was used for the direct growth of CNS via facile and low-cost approach. The effect of various temperatures (500 °C, 600 °C and 700 °C) and acetylene flow rates were investigated to study the structural evolution on the carbon products. The purified CNS thus obtained was characterized by various physicochemical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and cyclicvoltametry. The synthesised hollow nanospheres were investigated as anode materials for Li-ion batteries. After 25 cycles of repeated charge/discharge cycles, the discharge and charge capacities were found to be 574 mAh/g and 570 mAh/g, respectively which are significantly higher than the commercial graphite samples.

  16. The role of the gas species on the formation of carbon nanotubes during thermal chemical vapour deposition

    International Nuclear Information System (INIS)

    Ohashi, Fumitaka; Chen, Guan Yow; Stolojan, Vlad; Silva, S Ravi P

    2008-01-01

    In this paper, we investigate the several roles that hydrogen plays in the catalytic growth of carbon nanotubes from the point of view of gas species, catalyst activation and subsequent interaction with the carbon nanotubes. Carbon nanotubes and nanofibres were grown by thermal chemical vapour deposition, using methane and a mixture of hydrogen and helium, for a range of growth temperatures and pre-treatment procedures. Long, straight carbon nanotubes were obtained at 900 deg. C, and although the growth yield increases with the growth temperature, the growth shifts from nanotubes to nanofibres. By introducing a helium purge as part of the pre-treatment procedure, we change the gas chemistry by altering the hydrogen concentration in the initial reaction stage. This simple change in the process resulted in a clear difference in the yield and the structure of the carbon nanofibres produced. We find that the hydrogen concentration in the initial reaction stage significantly affects the morphology of carbon fibres. Although hydrogen keeps the catalyst activated and increases the yield, it prevents the formation of graphitic nanotubes.

  17. Parametric study of waste chicken fat catalytic chemical vapour deposition for controlled synthesis of vertically aligned carbon nanotubes

    Science.gov (United States)

    Suriani, A. B.; Dalila, A. R.; Mohamed, A.; Rosmi, M. S.; Mamat, M. H.; Malek, M. F.; Ahmad, M. K.; Hashim, N.; Isa, I. M.; Soga, T.; Tanemura, M.

    2016-12-01

    High-quality vertically aligned carbon nanotubes (VACNTs) were synthesised using ferrocene-chicken oil mixture utilising a thermal chemical vapour deposition (TCVD) method. Reaction parameters including vaporisation temperature, catalyst concentration and synthesis time were examined for the first time to investigate their influence on the growth of VACNTs. Analysis via field emission scanning electron microscopy and micro-Raman spectroscopy revealed that the growth rate, diameter and crystallinity of VACNTs depend on the varied synthesis parameters. Vaporisation temperature of 570°C, catalyst concentration of 5.33 wt% and synthesis time of 60 min were considered as optimum parameters for the production of VACNTs from waste chicken fat. These parameters are able to produce VACNTs with small diameters in the range of 15-30 nm and good quality (ID/IG 0.39 and purity 76%) which were comparable to those synthesised using conventional carbon precursor. The low turn on and threshold fields of VACNTs synthesised using optimum parameters indicated that the VACNTs synthesised using waste chicken fat are good candidate for field electron emitter. The result of this study therefore can be used to optimise the growth and production of VACNTs from waste chicken fat in a large scale for field emission application.

  18. Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

    Science.gov (United States)

    Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

    2015-06-01

    Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

  19. Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

    Science.gov (United States)

    Jin, Yongzhong; Chen, Jian; Fu, Qingshan; Li, Binghong; Zhang, Huazhi; Gong, Yong

    2015-01-01

    Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry-differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C4H4CuO6 → Cu reaction occurs at ∼250-310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100-400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5-1 μm and fiber diameter of 100-200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system.

  20. Synthesis of carbon nanostructures from high density polyethylene (HDPE) and polyethylene terephthalate (PET) waste by chemical vapour deposition

    Science.gov (United States)

    Hatta, M. N. M.; Hashim, M. S.; Hussin, R.; Aida, S.; Kamdi, Z.; Ainuddin, AR; Yunos, MZ

    2017-10-01

    In this study, carbon nanostructures were synthesized from High Density Polyethylene (HDPE) and Polyethylene terephthalate (PET) waste by single-stage chemical vapour deposition (CVD) method. In CVD, iron was used as catalyst and pyrolitic of carbon source was conducted at temperature 700, 800 and 900°C for 30 minutes. Argon gas was used as carrier gas with flow at 90 sccm. The synthesized carbon nanostructures were characterized by FESEM, EDS and calculation of carbon yield (%). FESEM micrograph shows that the carbon nanostructures were only grown as nanofilament when synthesized from PET waste. The synthesization of carbon nanostructure at 700°C was produced smooth and the smallest diameter nanofilament compared to others. The carbon yield of synthesized carbon nanostructures from PET was lower from HDPE. Furthermore, the carbon yield is recorded to increase with increasing of reaction temperature for all samples. Elemental study by EDS analysis were carried out and the formation of carbon nanostructures was confirmed after CVD process. Utilization of polymer waste to produce carbon nanostructures is beneficial to ensure that the carbon nanotechnology will be sustained in future.

  1. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  2. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  3. Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

    International Nuclear Information System (INIS)

    Thomas, Tegan; Blackman, Christopher S.; Parkin, Ivan P.; Carmalt, Claire J.

    2013-01-01

    Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl 4 or VOCl 3 with t BuAsH 2 . Using the vanadium precursor VCl 4 , films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl 3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl 4 , were silver in appearance. The films deposited using VOCl 3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl 4 or VOCl 3 and t BuAsH 2 . • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl 3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

  4. Optical monitoring of surface processes relevant to thin film growth by chemical vapour deposition

    International Nuclear Information System (INIS)

    Simcock, Michael Neil

    2002-01-01

    This thesis reports on the investigation of the use of reflectance anisotropy spectroscopy (RAS) as an in-situ monitor for the preparation and oxidation of GaAs(100) c(4x4) surfaces using a CVD 2000 MOCVD reactor. These surfaces were oxidised using air. It was found that it was possible to follow surface degradation using RA transients at 2.6eV and 4eV. From this data it was possible to speculate on the nature of the surface oxidation process. A study was performed into the rate of surface degradation under different concentrations of air, it was found that the relation between the air concentration and the surface degradation was complicated but that the behaviour of the first third of the degradation approximated a first order behaviour. An estimation of the activation energy of the process was then made, and an assessment of the potential use of the glove-box for STM studies which is an integral part of the MOCVD equipment was also made. Following this, a description is given of the construction of an interferometer for monitoring thin film growth. An investigation is also described into two techniques designed to evaluate the changes in reflected intensity as measured by an interferometer. The first technique uses an iteration procedure to determine the film thickness from the reflection data. This is done using a Taylor series expansion of the thin film reflection function to iterate for the thickness. Problems were found with the iteration when applied to noisy data, these were solved by using a least squares fit to smooth the data. Problems were also found with the iteration at the turning points these were solved using the derivative of the function and by anticipating the position of the turning points. The second procedure uses the virtual interface method to determine the optical constants of the topmost deposited material, the virtual substrate, and the growth rate. This method is applied by using a Taylor series expansion of the thin film reflection

  5. Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Yongzhong [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Chen, Jian, E-mail: wuhangzs@163.com [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Fu, Qingshan [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Li, Binghong [China Rubber Group Carbon Black Industry Research and Design Institute, 643000 Zigong, Sichuan (China); Zhang, Huazhi; Gong, Yong [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China)

    2015-01-01

    Graphical abstract: - Highlights: • HCNFs were synthesized by one-step CVD using cupric tartrate as a catalyst at temperature below 500 °C. • The synthesis of HCNFs is highly temperature-dependent at the synthesis temperature of 280–480 °C. • The addition of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system. - Abstract: Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry–differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C{sub 4}H{sub 4}CuO{sub 6} → Cu reaction occurs at ∼250–310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100–400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5–1 μm and fiber diameter of 100–200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system.

  6. Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

    International Nuclear Information System (INIS)

    Jin, Yongzhong; Chen, Jian; Fu, Qingshan; Li, Binghong; Zhang, Huazhi; Gong, Yong

    2015-01-01

    Graphical abstract: - Highlights: • HCNFs were synthesized by one-step CVD using cupric tartrate as a catalyst at temperature below 500 °C. • The synthesis of HCNFs is highly temperature-dependent at the synthesis temperature of 280–480 °C. • The addition of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system. - Abstract: Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry–differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C 4 H 4 CuO 6 → Cu reaction occurs at ∼250–310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100–400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5–1 μm and fiber diameter of 100–200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system

  7. Antimicrobial activity of novel nanostructured Cu-SiO2 coatings prepared by chemical vapour deposition against hospital related pathogens.

    Science.gov (United States)

    Varghese, Sajnu; Elfakhri, Souad O; Sheel, David W; Sheel, Paul; Bolton, Frederick J Eric; Foster, Howard A

    2013-09-05

    There is increasing recognition that the healthcare environment acts as an important reservoir for transmission of healthcare acquired infections (HCAI). One method of reducing environmental contamination would be use of antimicrobial materials. The antimicrobial activity of thin silica-copper films prepared by chemical vapour deposition was evaluated against standard strains of bacteria used for disinfectant testing and bacteria of current interest in HCAI. The structure of the coatings was determined using Scanning Electron Microscopy and their hardness and adhesion to the substrate determined. Antimicrobial activity was tested using a method based on BS ISO 22196:2007. The coatings had a pale green-brown colour and had a similar hardness to steel. SEM showed nano-structured aggregates of Cu within a silica matrix. A log10 reduction in viability of >5 could be obtained within 4 h for the disinfectant test strains and within 6 h for producing Acinetobacter baumannii, Klebsiella pneumoniae and Stenotrophomonas maltophilia. Activity against the other hospital isolates was slower but still gave log10 reduction factors of >5 for extended spectrum β-lactamase producing Escherichia coli and >3 for vancomycin resistant Enterococcus faecium, methicillin resistant Staphylococcus aureus and Pseudomonas aeruginosa within 24 h. The results demonstrate the importance of testing antimicrobial materials destined for healthcare use against isolates of current interest in hospitals as well as standard test strains. The coatings used here can also be applied to substrates such as metals and ceramics and have potential applications where reduction of microbial environmental contamination is desirable.

  8. Fe3−δO4/MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition

    International Nuclear Information System (INIS)

    Mantovan, R; Vangelista, S; Kutrzeba-Kotowska, B; Lamperti, A; Fanciulli, M; Manca, N; Pellegrino, L

    2014-01-01

    Fe 3−δ O 4 /MgO/Co magnetic tunnel junctions (MTJs) are synthesized on top of ∼1 inch Si/SiO 2 substrates by conducting a full in situ chemical vapour and atomic layer deposition process with no vacuum break. Tunnel magnetoresistance up to 6% is measured at room temperature, increasing to 12.5% at 120 K. Our results demonstrate the possibility of using full-chemical processes to synthesize functional MTJs, and this could provide a path towards the use of cost-effective methods to produce magnetic devices on a large scale. (fast track communication)

  9. Growth kinetics of nc-Si:H deposited at 200 °C by hot-wire chemical vapour deposition

    CSIR Research Space (South Africa)

    Oliphant, CJ

    2011-05-01

    Full Text Available deposited on single-side polished (100) crystalline silicon and Corning 7059 glass substrates using an ultra-high vacuum HWCVD system [3] from various 3 gas mixtures of SiH4 and H2. The H-dilution ratio, defined as )( 42 2 SiHH HR ?+? ? = , where..., South Africa 2 National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040, South Africa 3 CSIR National Centre for Nano-Structured Materials, P. O. Box 395, Pretoria 0001, South Africa Abstract We report...

  10. Barrier properties to surrogates of hydrogenated carbon nano-films deposited on PET by plasma-enhanced chemical vapour deposition.

    Science.gov (United States)

    Oliveira, Éder C; Echegoyen, Yolanda; Nerin, Cristina; Cruz, Sandra A

    2014-01-01

    Poly(ethylene terephthalate) resin was contaminated with a series of surrogates using a US Food and Drug Administration protocol. The contaminated samples were coated with two different kinds of hydrogenated amorphous carbon thin films (a-C:H): one with diamond-like hydrogenated amorphous carbon and another with polymer-like hydrogenated carbon (PLCH) phases. To evaluate the barrier properties of the a-C:H films, migration assays were performed using food simulants. After the tests, analysis by gas chromatography with different detectors was carried out. The appearance of the films before and after the migration experiments was studied by field emission scanning electron microscopy. The results showed that a-C:H films have good barrier properties for most of the evaluated compounds, mainly when they are deposited as PLCH phase.

  11. Surface engineering of artificial heart valve disks using nanostructured thin films deposited by chemical vapour deposition and sol-gel methods.

    Science.gov (United States)

    Jackson, M J; Robinson, G M; Ali, N; Kousar, Y; Mei, S; Gracio, J; Taylor, H; Ahmed, W

    2006-01-01

    Pyrolytic carbon (PyC) is widely used in manufacturing commercial artificial heart valve disks (HVD). Although PyC is commonly used in HVD, it is not the best material for this application since its blood compatibility is not ideal for prolonged clinical use. As a result thrombosis often occurs and the patients are required to take anti-coagulation drugs on a regular basis in order to minimize the formation of thrombosis. However, anti-coagulation therapy gives rise to some detrimental side effects in patients. Therefore, it is extremely urgent that newer and more technically advanced materials with better surface and bulk properties are developed. In this paper, we report the mechanical properties of PyC-HVD, i.e. strength, wear resistance and coefficient of friction. The strength of the material was assessed using Brinell indentation tests. Furthermore, wear resistance and coefficient of friction values were obtained from pin-on-disk testing. The micro-structural properties of PyC were characterized using XRD, Raman spectroscopy and SEM analysis. Also in this paper we report the preparation of freestanding nanocrystalline diamond films (FSND) using the time-modulated chemical vapour deposition (TMCVD) process. Furthermore, the sol-gel technique was used to uniformly coat PyC-HVD with dense, nanocrystalline-titanium oxide (nc-TiO2) coatings. The as-grown nc-TiO2 coatings were characterized for microstructure using SEM and XRD analysis.

  12. Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Perez, Arllene M; Renero, Francisco J; Zuniga, Carlos; Torres, Alfonso; Santiago, Cesar

    2005-01-01

    Optical, structural and electric properties of (a-(Si 90 Ge 10 ) 1-y B y :H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10 -3 to 10 1 Ω -1 cm -1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV

  13. Chemical vapour deposition at atmospheric pressure of graphene on molybdenum foil: Effect of annealing time on characteristics and corrosion stability of graphene coatings

    International Nuclear Information System (INIS)

    Naghdi, Samira; Jevremović, Ivana; Mišković-Stanković, Vesna; Rhee, Kyong Yop

    2016-01-01

    Highlights: • Atmospheric pressure chemical vapor deposition of graphene on molybdenum foils. • Quality and domain size of graphene layers increased with longer annealing times. • The number of graphene layers decreased with longer annealing times. • Graphene coatings on molybdenum foils exhibited corrosion inhibitive properties. - Abstract: In this work, the effect of pre-annealing of Mo substrate on the quality of graphene layers grown by chemical vapour deposition was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. Moreover, different electrochemical techniques were employed to investigate the corrosion stability of the graphene coated Mo in 0.1 M NaCl. Longer annealing time resulted in less defective graphene coatings with fewer layers. Graphene coating on the annealed Mo provided better protection against corrosion during the initial exposure times, while after prolonged exposure times, both graphene coatings on annealed and non-annealed Mo exhibited nearly the same corrosion inhibitive properties.

  14. IR Laser Decomposition of 1,3-Disilacyclobutane in Presence of Carbon Disulfide: Chemical Vapour Deposition of Polythiacarbosilane

    Czech Academy of Sciences Publication Activity Database

    Urbanová, Markéta; Pola, Josef

    2004-01-01

    Roč. 689, č. 16 (2004), s. 2697-2701 ISSN 0022-328X R&D Projects: GA MŠk ME 612 Institutional research plan: CEZ:AV0Z4072921 Keywords : laser * polythiacarbosilane * chemical vapor deposition Subject RIV: CC - Organic Chemistry Impact factor: 1.905, year: 2004

  15. Modified DLC coatings prepared in a large-scale reactor by dual microwave/pulsed-DC plasma-activated chemical vapour deposition

    International Nuclear Information System (INIS)

    Corbella, C.; Bialuch, I.; Kleinschmidt, M.; Bewilogua, K.

    2008-01-01

    Diamond-Like Carbon (DLC) films find abundant applications as hard and protective coatings due to their excellent mechanical and tribological performances. The addition of new elements to the amorphous DLC matrix tunes the properties of this material, leading to an extension of its scope of applications. In order to scale up their production to a large plasma reactor, DLC films modified by silicon and oxygen additions have been grown in an industrial plant of 1m 3 by means of pulsed-DC plasma-activated chemical vapour deposition (PACVD). The use of an additional microwave (MW) source has intensified the glow discharge, partly by electron cyclotron resonance (ECR), accelerating therefore the deposition process. Hence, acetylene, tetramethylsilane (TMS) and hexamethyldisiloxane (HMDSO) constituted the respective gas precursors for the deposition of a-C:H (DLC), a-C:H:Si and a-C:H:Si:O films by dual MW/pulsed-DC PACVD. This work presents systematic studies of the deposition rate, hardness, adhesion, abrasive wear and water contact angle aimed to optimize the technological parameters of deposition: gas pressure, relative gas flow of the monomers and input power. This study has been completed with measures of the atomic composition of the samples. Deposition rates around 1 μm/h, typical for standard processes held in the large reactor, were increased about by a factor 10 when the ionization source has been operated in ECR mode

  16. Low-pressure chemical vapour deposition of LiCoO2 thin films: a systematic investigation of the deposition parameters

    NARCIS (Netherlands)

    Oudenhoven, J.F.M.; Dongen, van T.; Niessen, R.A.H.; Croon, de M.H.J.M.; Notten, P.H.L.

    2009-01-01

    The feasibility of volatile precursor low-pressure chemical vapor deposition (LPCVD) for the production of LiCoO2 cathodes for all solid-state microbatteries was examined. To test this feasibility, and gain insight into the deposition behavior, the influence of the deposition parameters on the

  17. Raman Spectroscopic Study of Carbon Nano tubes Prepared Using Fe/ZnO-Palm Olein-Chemical Vapour Deposition Syazwan

    International Nuclear Information System (INIS)

    Zobir, A.M.; Abdullah, S.; Rusop, M.; Abdullah, S.; Abu Bakar, S.; Zainal, Z.; Sarijo, S.H.; Rusop, M.

    2012-01-01

    Multi walled carbon nano tubes (MWCNTs) were synthesized using Fe/ZnO catalyst by a dual-furnace thermal chemical vapor deposition (CVD) method at 800-1000 degree C using nitrogen gas with a constant flow rate of 150 sccm/min as a gas carrier. Palm olein (PO), ferrocene in the presence of 0.05 M zinc nitrate, and a p-type silicon wafer were used as carbon source, catalyst precursor, and sample target, respectively. D, G, and G' bands were observed at 1336-1364, 1559-1680, and 2667-2682 cm -1 , respectively. Carbon nano tubes (CNTs) with the highest degree of crystallinity were obtained at around 8000 degree C, and the smallest diameter of about 2 nm was deposited on the silicon substrate at 1000 degree C.

  18. Raman Spectroscopic Study of Carbon Nanotubes Prepared Using Fe/ZnO-Palm Olein-Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Syazwan Afif Mohd Zobir

    2012-01-01

    Full Text Available Multiwalled carbon nanotubes (MWCNTs were synthesized using Fe/ZnO catalyst by a dual-furnace thermal chemical vapor deposition (CVD method at 800–1000°C using nitrogen gas with a constant flow rate of 150 sccm/min as a gas carrier. Palm olein (PO, ferrocene in the presence of 0.05 M zinc nitrate, and a p-type silicon wafer were used as carbon source, catalyst precursor, and sample target, respectively. D, G, and G′ bands were observed at 1336–1364, 1559–1680, and 2667–2682 cm-1, respectively. Carbon nanotubes (CNTs with the highest degree of crystallinity were obtained at around 8000°C, and the smallest diameter of about 2 nm was deposited on the silicon substrate at 1000°C.

  19. Cr{sub 2}O{sub 3} thin films grown at room temperature by low pressure laser chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sousa, P.M. [Universidade de Lisboa, Faculdade de Ciencias, Departamento de Fisica and ICEMS, Campo Grande, Ed. C8, 1749-016 Lisboa (Portugal); Silvestre, A.J., E-mail: asilvestre@deq.isel.ipl.p [Instituto Superior de Engenharia de Lisboa and ICEMS, R. Conselheiro Emidio Navarro 1, 1959-007 Lisboa (Portugal); Conde, O. [Universidade de Lisboa, Faculdade de Ciencias, Departamento de Fisica and ICEMS, Campo Grande, Ed. C8, 1749-016 Lisboa (Portugal)

    2011-03-31

    Chromia (Cr{sub 2}O{sub 3}) has been extensively explored for the purpose of developing widespread industrial applications, owing to the convergence of a variety of mechanical, physical and chemical properties in one single oxide material. Various methods have been used for large area synthesis of Cr{sub 2}O{sub 3} films. However, for selective area growth and growth on thermally sensitive materials, laser-assisted chemical vapour deposition (LCVD) can be applied advantageously. Here we report on the growth of single layers of pure Cr{sub 2}O{sub 3} onto sapphire substrates at room temperature by low pressure photolytic LCVD, using UV laser radiation and Cr(CO){sub 6} as chromium precursor. The feasibility of the LCVD technique to access selective area deposition of chromia thin films is demonstrated. Best results were obtained for a laser fluence of 120 mJ cm{sup -2} and a partial pressure ratio of O{sub 2} to Cr(CO){sub 6} of 1.0. Samples grown with these experimental parameters are polycrystalline and their microstructure is characterised by a high density of particles whose size follows a lognormal distribution. Deposition rates of 0.1 nm s{sup -1} and mean particle sizes of 1.85 {mu}m were measured for these films.

  20. Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-29

    Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  1. Autonomous Chemical Vapour Detection by Micro UAV

    Directory of Open Access Journals (Sweden)

    Kent Rosser

    2015-12-01

    Full Text Available The ability to remotely detect and map chemical vapour clouds in open air environments is a topic of significant interest to both defence and civilian communities. In this study, we integrate a prototype miniature colorimetric chemical sensor developed for methyl salicylate (MeS, as a model chemical vapour, into a micro unmanned aerial vehicle (UAV, and perform flights through a raised MeS vapour cloud. Our results show that that the system is capable of detecting MeS vapours at low ppm concentration in real-time flight and rapidly sending this information to users by on-board telemetry. Further, the results also indicate that the sensor is capable of distinguishing “clean” air from “dirty”, multiple times per flight, allowing us to look towards autonomous cloud mapping and source localization applications. Further development will focus on a broader range of integrated sensors, increased autonomy of detection and improved engineering of the system.

  2. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Jany, Ch.

    1998-01-01

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead η to decrease. In contrast, η was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp 2 phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  3. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  4. Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques: The effects of microstructure and chemical composition

    Energy Technology Data Exchange (ETDEWEB)

    Cerqueira, M.F., E-mail: fcerqueira@fisica.uminho.p [Departamento de Fisica, Universidade do Minho, Campus de Gualtar 4710-057 Braga (Portugal); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Via Orabona n.4-70126 Bari (Italy); Stepikhova, M. [Institute for Physics of Microstructures RAS, 603600 Nizhnij Novgorod GSP-105 (Russian Federation); Alpuim, P.; Andres, G. [Departamento de Fisica, Universidade do Minho, Campus de Gualtar 4710-057 Braga (Portugal); Kozanecki, A. [Polish Academy of Sciences, Institute of Physics, PL-02668, Warsaw (Poland); Soares, M.J.; Peres, M. [Departamento de Fisica, Universidade de Aveiro, Campus de Santiago, 3700 Aveiro (Portugal)

    2009-08-31

    Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er{sup 3+} photoluminescence efficiency.

  5. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Husain, Mushahid, E-mail: mush-reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India)

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  6. Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

    2010-01-01

    Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

  7. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  8. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    International Nuclear Information System (INIS)

    Wen-Juan, Hu; Fen-Yan, Xie; Qiang, Chen; Jing, Weng

    2008-01-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films

  9. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Science.gov (United States)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  10. Origin of the 2.45 eV luminescence band observed in ZnO epitaxial layers grown on c-plane sapphire by chemical vapour deposition

    International Nuclear Information System (INIS)

    Saroj, R K; Dhar, S

    2014-01-01

    Zinc oxide epitaxial layers have been grown on c-plane sapphire substrates by the chemical vapour deposition (CVD) technique. A structural study shows (0001)-oriented films with good crystalline quality. The temperature and excitation power dependence of the photoluminescence (PL) characteristics of these layers is studied as a function of various growth parameters, such as the growth temperature, oxygen flow rate and Zn flux, which suggest that the origin of the broad visible luminescence (VL), which peaks at 2.45 eV, is the transition between the conduction band and the Zn vacancy acceptor states. A bound excitonic transition observed at 3.32 eV in low temperature PL has been identified as an exciton bound to the neutral Zn vacancy. Our study also reveals the involvement of two activation processes in the dynamics of VL, which has been explained in terms of the fluctuation of the capture barrier height for the holes trapped in Zn vacancy acceptors. The fluctuation, which might be a result of the inhomogeneous distribution of Zn vacancies, is found to be associated with an average height of 7 and 90 meV, respectively, for the local and global maxima. (paper)

  11. Mechanical characteristics of ultra-long horizontal nanocantilevers grown by real-time feedback control on focused-ion-beam chemical vapour deposition

    International Nuclear Information System (INIS)

    Guo, Dengji; Warisawa, Shin’ichi; Ishihara, Sunao; Kometani, Reo

    2015-01-01

    Focused-ion-beam chemical vapour deposition (FIB-CVD) has been repeatedly proved to be a useful tool for the growth of three-dimensional (3D) micro- and nano-structures. The strategy of real-time feedback control on FIB-CVD was previously proposed and experimentally demonstrated to be effective for growing ultra-long horizontal nanocantilevers. To fabricate various nanoelectromechanical systems that consist of such types of nanocantilever structures, the mechanical characteristics of ultra-long horizontal nanocantilevers should be investigated. In this study, nanocantilevers with an overhang length of up to 35 μm were grown by using a 30 kV Ga + FIB, a beam current of 0.50 pA and phenanthrene (C 14 H 10 ) as the gas source to deposit a diamond-like carbon structure. The Young’s modulus of each nanocantilever was measured by bending the nanocantilever with a nanopillar whose Young’s modulus was known. The average density of each nanocantilever was calculated from the Young’s modulus and the measured resonant frequency. We found that the mechanical characteristics of each nanocantilever depended on the length of the nanocantilever if the strategy of real-time feedback control was applied in fabrication. The Young’s moduli and the averaged densities of the nanocantilevers with a length of 11 to 34 μm were found to be 86 to 254 GPa and 1950 to 5750 kg m −3 , respectively. With the increase of the overhang length, the Young’s modulus and the average density were found to gradually increase. (paper)

  12. Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; Kaufmann, Rolf; Kaenel, Hans von

    2008-01-01

    We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the intrinsic Ge layer, different doping levels of the p and n layers and different diode diameters. Epitaxial Ge was deposited on Si(100) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. Dark current values as low as 0.04 mA/cm 2 were achieved for 1 μm thick p-i-n photodiodes on lightly doped substrates at - 1 V bias, and external quantum efficiencies of 56% at 1.30 μm and 44% at 1.55 μm for 3 μm thick p + -i-n + photodiodes on highly doped substrates under 0.5 V reverse bias. For a 30 μm diameter diode a RC frequency of 21 GHz is obtained at a reverse bias of 1 V. With such characteristics, these diodes are attractive for telecommunication and optoelectronic applications

  13. The effect of ion-beam induced strain on the nucleation density of chemical vapour deposited diamond

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

    1995-01-01

    The effect of ion implantation on the nucleation of CVD diamond on silicon and diamond substrates has been investigated. The strategy employed is to create laterally confined regions of strain in the substrates by focused MeV implantation of light ions. Raman Microscopy has been employed to obtain spatially resolved maps of the strain in these implanted regions. On diamond substrates a homo-epitaxial CVD diamond film was grown on top of both the implanted and unimplanted regions of the substrate. Raman analysis of the film grown on top of the implanted region revealed it to be under slightly tensile strain as compared to that grown on the unimplanted diamond substrate. The film deposited on the implanted portion of the diamond showed a lower fluorescence background; indicating a lower concentration of incorporated defects. These results suggest that the strain and defects in the diamond substrate material have an important influence on the quality of the homo-epitaxially grown diamond films. 6 refs., 5 figs

  14. Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang, E-mail: yang.liu@helmholtz-berlin.de; Plate, Paul, E-mail: paul.plate@helmholtz-berlin.de; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany); Bartsch, Peter [Beuth Hochschule für Technik Berlin, Fachbereich VIII Maschinenbau, Veranstaltungstechnik, Verfahrenstechnik (Germany); Fiechter, Sebastian; Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany); Fischer, Christian-Herbert [Freie Universität Berlin, Institute of Chemistry and Biochemistry (Germany)

    2017-04-15

    Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

  15. Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

    International Nuclear Information System (INIS)

    Liu, Yang; Plate, Paul; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina; Bartsch, Peter; Fiechter, Sebastian; Lux-Steiner, Martha Ch.; Fischer, Christian-Herbert

    2017-01-01

    Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

  16. Growth and properties of Al-rich InxAl1-xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Oh, Tae Su; Suh, Eun-Kyung; Kim, Jong Ock; Jeong, Hyun; Lee, Yong Seok; Nagarajan, S; Lim, Kee Young; Hong, Chang-Hee

    2008-01-01

    An Al-rich In x Al 1-x N ternary alloy was grown on a GaN template by metal-organic chemical vapour deposition (MOCVD). The GaN template was fabricated on a c-plane sapphire with a low temperature GaN nucleation layer. The growth of the 300 nm thick In x Al 1-x N layer was carried out under various growth temperatures and pressures. The surface morphology and the InN molar fraction of the In x Al 1-x N layer were assessed by using atomic force microscopy (AFM) and high resolution x-ray diffraction, respectively. The AFM surface images of the In x Al 1-x N ternary alloy exhibited quantum dot-like grains caused by the 3D island growth mode. The grains, however, disappeared rapidly by increasing diffusion length and mobility of the Al adatoms with increasing growth temperature and the full width at half maximum value of ternary peaks in HR-XRD decreased with decreasing growth pressure. The MOCVD growth condition with the increased growth temperature and decreased growth pressure would be effective to grow the In x Al 1-x N ternary alloy with a smooth surface and improved quality. The optical band edge of In x Al 1-x N ternary alloys was estimated by optical absorbance and, based on the results of HR-XRD and optical absorbance measurements, we obtained the bowing parameter of the In x Al 1-x N ternary alloy at b = 5.3 eV, which was slightly larger than that of previous reports

  17. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Oliphant, C. J.; Jordaan, W. A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Fabiane, M. [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Department of Physics, National University of Lesotho, P.O. Roma 180 (Lesotho)

    2016-01-07

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  18. Investigation of chemical vapour deposition diamond detectors by X-ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    International Nuclear Information System (INIS)

    Olivero, P.; Manfredotti, C.; Vittone, E.; Fizzotti, F.; Paolini, C.; Lo Giudice, A.; Barrett, R.; Tucoulou, R.

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the large hadron collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of 'detector grade' artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro-beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitative study of the inhomogeneity of the charge transport parameter defined as the product of mobility and lifetime for both electron and holes. XBIL represents a technique complementary to ion beam induced luminescence (IBIL), which has already been used by our group, since X-ray energy loss profile in the material is different from that of MeV ions. X-ray induced luminescence maps have been performed simultaneously with induced photocurrent maps, to correlate charge transport and induced luminescence properties of diamond. Simultaneous XBICC and XBIL maps exhibit features of partial complementarity that have been interpreted on the basis of considerations on radiative and non-radiative recombination processes which compete with charge transport efficiency

  19. TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition; Sistema RTP: uma tecnica poderosa para o monitoramento da formacao de nanotubos de carbono durante o processo por deposicao de vapor quimico

    Energy Technology Data Exchange (ETDEWEB)

    Tristao, Juliana Cristina; Moura, Flavia Cristina Camilo; Lago, Rochel Montero, E-mail: rochel@ufmg.b [Universidade Federal de Minas Gerais (DQ/UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Sapag, Karim [Universidade Nacional de San Luis (Argentina). Lab. de Ciencias de Superficies y Medios Porosos

    2010-07-01

    In this work, a TPR (Temperature Programmed Reduction) system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition), The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al{sub 2}O{sub 3} and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields. (author)

  20. Technical committee meeting on aerosol formation, vapour deposits and sodium vapour trapping. Summary report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1977-01-01

    The papers presented at the LMFBR meeting on aerosol formation covered the following four main topics: theoretical studies on aerosol behaviour and comparison with experimental results; techniques for measurement of aerosols; techniques for trapping sodium vapour and aerosols in gas circuits; design of components having to cope with aerosol deposits. The resulting summaries, conclusions and recommendations which were were agreed upon are presented.

  1. Technical committee meeting on aerosol formation, vapour deposits and sodium vapour trapping. Summary report

    International Nuclear Information System (INIS)

    1977-01-01

    The papers presented at the LMFBR meeting on aerosol formation covered the following four main topics: theoretical studies on aerosol behaviour and comparison with experimental results; techniques for measurement of aerosols; techniques for trapping sodium vapour and aerosols in gas circuits; design of components having to cope with aerosol deposits. The resulting summaries, conclusions and recommendations which were were agreed upon are presented

  2. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  3. Ethylene vinylacetate copolymer and nanographite composite as chemical vapour sensor

    International Nuclear Information System (INIS)

    Stepina, Santa; Sakale, Gita; Knite, Maris

    2013-01-01

    Polymer-nanostructured carbon composite as chemical vapour sensor is described, made by the dissolution method of a non-conductive polymer, ethylene vinylacetate copolymer, mixed with conductive nanographite particles (carbon black). Sensor exhibits relative electrical resistance change in chemical vapours, like ethanol and toluene. Since the sensor is relatively cheap, easy to fabricate, it can be used in air quality monitoring and at industries to control hazardous substance concentration in the air, for example, to protect workers from exposure to chemical spills

  4. Chemical vapour deposition of graphene on Nk(111) and Co(0001) and intercalation with Au to study Dirac Cone Formation and Rashba splitting

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Barriga, J.; Vescovo, E.; Varykhalov, A.; Scholz, M.R.; Rader, O.; Marchenko, D.; Rybkin, A.

    2010-01-01

    We show in detail monitoring by photoelectron spectroscopy how graphene can be grown by chemical vapor deposition on the transition-metal surfaces Ni(111) and Co(0001) and intercalated by a monoatomic layer of Au. For both systems, a linear E(k) dispersion of massless Dirac fermions appears in the graphene {pi}-band in the vicinity of the Fermi energy. In order to study ferromagnetism and spin-orbit effects by spin- and angle-resolved photoelectron spectroscopy, the sample must be magnetized in remanence. To this end, a W(110) substrate is prepared, its cleanliness verified by photoemission from W(110) surface states and surface core levels, and epitaxial Ni(111) and Co(0001) thin films are grown on top. Spin-resolved photoemission from the {pi}-band shows that the ferromagnetic polarization of graphene/Ni(111) and graphene/Co(0001) is negligible and that graphene on Ni(111) is after intercalation of Au spin-orbit split by the Rashba effect.

  5. Effect of the substrate surface topology and temperature on the structural properties of ZnO layers obtained by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria)

    2010-04-01

    In this work thin ZnO layers were grown by metal-organic PECVD (RF 13.56 MHz) on Si wafers. Zn acetylacetonate was used as a precursor and oxygen as oxidant. A system for dosed injection of the precursor and oxidant into the plasma reactor was developed. The influence of the substrate surface topology and temperature on the structural properties of the deposited layers was studied. ZnO and graphite powder dispersions were used to modify the silicon wafers before starting the deposition process of the layers. Some of the ZnO layers were deposited on the back, unpolished, side of Si wafers. Depositions at 400 {sup 0}C were performed to examine the effect of the substrate temperatures on the layer growth. The film structure was examined by XRD and SEM. The results show that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along the c-axis direction perpendicular to the substrate surfaces. ZnO layers deposited on thin ZnO seed films and clean Si surface exhibit well-developed grain structures and more c-axis preferred phase with better crystal quality than that of the layers deposited on graphite seed layer or rough, unpolished Si wafer.

  6. Process control by optical emission spectroscopy during growth of a-C:H from a CH4 plasma by plasma-enhanced chemical vapour deposition

    DEFF Research Database (Denmark)

    Barholm-Hansen, C; Bentzon, MD; Vigild, Martin Etchells

    1994-01-01

    During the growth of a-C:H thin films for tribological applications, the characteristic optical emission from a CH4 plasma was used to estimate growth conditions such as the degree of dissociation of the feed gas, the deposition rate and the presence of impurities. Films were fabricated with vari...

  7. Study of three dimensional germanium islands and ultrathin Si{sub x}Ge{sub 1-x} films grown by chemical vapour deposition on Si(111)-(7 x 7)

    Energy Technology Data Exchange (ETDEWEB)

    Gopalakrishnan, Selvi

    2005-07-15

    This work probed at the atomic level, processes that occur during the Ge three dimensional island formation and on ultrathin Si{sub x}Ge{sub 1-x} epitaxial growth by chemical vapour deposition on the Si(111)-(7 x 7) substrate with the aid of surface probe techniques such as STM and AFM, XPS, as well as TEM imaging of any 3D island formation. This work could essentially be divided into two parts. The first part studied the growth of the strained Ge on Si system with emphasis on the characterisation of the CVD grown three dimensional germanium islands on a standard Si(111)-(7 x 7) substrate as well as on a surface modified Si(111)-(7 x 7) substrate. The characterisation was carried out using a combination of techniques. XPS was used to calculate the effective coverages of deposited germanium, the STM was used to image the top most layers whenever possible and AFM, cross-sectional TEM and HRTEM to image the three dimensional islands. The possible causes of the surface modification were also examined. In the second part of this work the growth morphologies ultrathin Si{sub x}Ge{sub 1-x} layers grown on the Si(111)-(7 x 7) substrate at 750 K where the hydrogen desorption rate from the Si(111) surface is low and at 850 K which was the temperature at which the rate of hydrogen desorption from the Si(111) surface was a maximum were investigated. In addition modelling of ultrathin layer growth was carried out using two existing growth models. (orig.)

  8. The role of transparent conducting oxides in metal organic chemical vapour deposition of CdTe/CdS Photovoltaic solar cells

    International Nuclear Information System (INIS)

    Irvine, S.J.C.; Lamb, D.A.; Barrioz, V.; Clayton, A.J.; Brooks, W.S.M.; Rugen-Hankey, S.; Kartopu, G.

    2011-01-01

    A systematic study is made between the relationship of Cd 0.9 Zn 0.1 S/CdTe photovoltaic (PV) device properties for three different commercial transparent conducting oxide (TCO) materials and some experimental CdO to determine the role of the TCO in device performance. The resistance contribution from the TCO was measured after depositing the gold contact architectures directly onto the TCOs. These were compared with the Cd 0.9 Zn 0.1 S/CdTe device properties using the same contact arrangements. Series resistance for the commercial TCOs correlated with their sheet resistance and gave good agreement with the PV device series resistance for the indium tin oxide (ITO) and fluorine doped tin oxide (FTO) 15 Ω/Sq. superstrates. The devices on the thicker FTO 7 Ω/sq superstrates were dominated by a low shunt resistance, which was attributed to the rough surface morphology causing micro-shorts. The device layers on the CdO substrate delaminated but devices were successfully made for ultra-thin CdTe (0.8 μm thick) and compared favourably with the comparable device on ITO. From the measurements on these TCOs it was possible to deduce the back contact resistance and gave an average value of 2 Ω.cm 2 . The correlation of fill factor with series resistance has been compared with the predictions of a 1-D device model and shows excellent agreement. For high efficiency devices the combined series resistance from the TCO and back contact need to be less than 1 Ω.cm 2 .

  9. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Mon-Pérez, E; Salazar, J; Ramos, E; Salazar, J Santoyo; Suárez, A López; Dutt, A; Santana, G; Monroy, B Marel

    2016-11-11

    Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH 2 Cl 2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH 3 /SiH 2 Cl 2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

  10. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition

    Science.gov (United States)

    Mon-Pérez, E.; Salazar, J.; Ramos, E.; Santoyo Salazar, J.; López Suárez, A.; Dutt, A.; Santana, G.; Marel Monroy, B.

    2016-11-01

    Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH2Cl2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH3/SiH2Cl2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

  11. Sistema RTP: uma técnica poderosa para o monitoramento da formação de nanotubos de carbono durante o processo por deposição de vapor químico TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    Juliana Cristina Tristão

    2010-01-01

    Full Text Available In this work, a TPR (Temperature Programmed Reduction system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition, The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al2O3 and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields.

  12. Silicon nanowire arrays as learning chemical vapour classifiers

    International Nuclear Information System (INIS)

    Niskanen, A O; Colli, A; White, R; Li, H W; Spigone, E; Kivioja, J M

    2011-01-01

    Nanowire field-effect transistors are a promising class of devices for various sensing applications. Apart from detecting individual chemical or biological analytes, it is especially interesting to use multiple selective sensors to look at their collective response in order to perform classification into predetermined categories. We show that non-functionalised silicon nanowire arrays can be used to robustly classify different chemical vapours using simple statistical machine learning methods. We were able to distinguish between acetone, ethanol and water with 100% accuracy while methanol, ethanol and 2-propanol were classified with 96% accuracy in ambient conditions.

  13. Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

    Directory of Open Access Journals (Sweden)

    Tsokkou Demetra

    2009-01-01

    Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

  14. The exchange reaction between deuterium and water vapour on platinum deposited over a hydrophobic support

    International Nuclear Information System (INIS)

    Itsuo, Iida; Junko, Kato; Kenzi, Tamuru

    1977-01-01

    Isotope exchange reaction between deuterium gas and water vapour at room temperature and below on platinum deposited on hydrophobic supports such as polytetrafluoroethylene (PTFE) or Porapak Q (copolymer of styrene and divinylbenzene) was studied and the results were compared with those of the exchange reaction on platinum over hydrophilic support such as alumina. It was demonstrated that the exchange reaction at temperatures below the boiling point of water is markedly retarded by the multilayer adsorption of water over the platinum catalyst deposited on hydrophilic support, whereas the platinum catalyst on hydrophobic support exhibited a high catalytic activity, being not retarded by the water, forming no multilayer of adsorbed water over platinum surface. Therefore in the case of the hydrogen isotope exchange reaction on platinum over hydrophobic support, the chemical exchange rate can be measured even under a saturated vapour pressure of water. The surface area of platinum was estimated by hydrogen chemisorption and hydrogen titration and specific activities of the catalyst were calculated at both room temperature and freezing point of water, which revealed that the specific rate of this reaction does not differ so much over various supports. (orig.) [de

  15. Comparison of interaction mechanisms of copper phthalocyanine and nickel phthalocyanine thin films with chemical vapours

    Science.gov (United States)

    Ridhi, R.; Singh, Sukhdeep; Saini, G. S. S.; Tripathi, S. K.

    2018-04-01

    The present study deals with comparing interaction mechanisms of copper phthalocyanine and nickel phthalocyanine with versatile chemical vapours: reducing, stable aromatic and oxidizing vapours namely; diethylamine, benzene and bromine. The variation in electrical current of phthalocyanines with exposure of chemical vapours is used as the detection parameter for studying interaction behaviour. Nickel phthalocyanine is found to exhibit anomalous behaviour after exposure of reducing vapour diethylamine due to alteration in its spectroscopic transitions and magnetic states. The observed sensitivities of copper phthalocyanine and nickel phthalcyanine films are different in spite of their similar bond numbers, indicating significant role of central metal atom in interaction mechanism. The variations in electronic transition levels after vapours exposure, studied using UV-Visible spectroscopy confirmed our electrical sensing results. Bromine exposure leads to significant changes in vibrational bands of metal phthalocyanines as compared to other vapours.

  16. Microstructural development in physical vapour-deposited partially stabilized zirconia thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Sohn, Y. H. (Center for Intelligent Processing of Materials, Worcester Polytechnic Institute, 100 Institute Road, Worcester, MA 01609-2280 (United States)); Biederman, R.R. (Center for Intelligent Processing of Materials, Worcester Polytechnic Institute, 100 Institute Road, Worcester, MA 01609-2280 (United States)); Sisson, R.D. Jr. (Center for Intelligent Processing of Materials, Worcester Polytechnic Institute, 100 Institute Road, Worcester, MA 01609-2280 (United States))

    1994-10-01

    The effects of processing parameters of physical vapour deposition on the microstructure of partially stabilized zirconia (PSZ) thermal barrier coatings have been experimentally investigated. Emphasis has been placed on the crystallographic texture of the PSZ coatings and the microstructure of the top surface of the PSZ coatings as well as the metal-ceramic interface. The variations in the deposition chamber temperature, substrate thickness, substrate rotation and vapour incidence angle resulted in the observation of significant differences in the crystallographic texture and microstructure of the PSZ coatings. ((orig.))

  17. Effects of the oxygen fraction and substrate bias power on the electrical and optical properties of silicon oxide films by plasma enhanced chemical vapour deposition using TMOS/O2 gas

    International Nuclear Information System (INIS)

    Bang, S B; Chung, T H; Kim, Y; Kang, M S; Kim, J K

    2004-01-01

    Thin oxide films are deposited from tetramethoxysilane in an inductively coupled oxygen glow discharge supplied with radio frequency power. The chemical bonding states of deposited films are analysed by Fourier transform infrared spectroscopy. The deposition rate and optical properties are determined from spectroscopic ellipsometry. Capacitance-voltage measurements are performed in MOS capacitors to obtain the electrical properties of the deposited films. With these tools, the effects of the substrate bias power and the oxygen mole fraction in the gas on the properties of the film are investigated. The refractive index first decreases with an increase in the oxygen mole fraction, and then increases again, showing a behaviour opposite to that of the deposition rate. The deposition rate increases with increasing substrate bias power and then saturates, while the refractive index increases slightly with an increase in the substrate bias power. The fixed oxide charge density decreases with increasing oxygen fraction and with increasing substrate bias power, while the interface trap density increases with increasing oxygen fraction and with increasing substrate bias power

  18. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    KAUST Repository

    Shi, Yumeng; Li, Henan; Li, Lain-Jong

    2014-01-01

    In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

  19. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    KAUST Repository

    Shi, Yumeng

    2014-10-20

    In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

  20. Ballistic transport in graphene grown by chemical vapor deposition

    NARCIS (Netherlands)

    Calado, V.E.; Zhu, S.E.; Goswami, S.; Xu, Q.; Watanabe, K.; Taniguchi, T.; Janssen, G.C.A.M.; Vandersypen, L.M.K.

    2014-01-01

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be

  1. Development of a new process for deposition of metallic vapours and ions

    International Nuclear Information System (INIS)

    Gabrielli, O. de.

    1989-01-01

    Surface treatment processes by deposition, enabling surface properties to be altered without altering the volume, are making rapid progress in industry. The description of these processes has led us to consider the role and the importance of methods using plasmas. The new plasma source we have developed is the subject of this experimental research: it is the basis of the deposition process (metallic ion and vapour deposition). The specifications and preliminary results enable us to compare this process with others in use. Fast deposition rates and excellent adhesion are the two main characteristics of this process [fr

  2. Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

    Science.gov (United States)

    Suh, Hyo Seon; Kim, Do Han; Moni, Priya; Xiong, Shisheng; Ocola, Leonidas E.; Zaluzec, Nestor J.; Gleason, Karen K.; Nealey, Paul F.

    2017-07-01

    Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocks of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. The ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications.

  3. Installation for vacuum vapour deposition of nickel, more particularly for manufacturing neutron guides

    International Nuclear Information System (INIS)

    Samuel, F.

    1986-01-01

    The present invention proposes an installation for vacuum vapour deposition of Ni of the type including in a vacuum chamber a device for heating a mass of at least one Ni isotope to be evaporated, and a surface to be covered with deposited Ni facing the heater, is claimed, in which the heater includes a ribbon of W conformed in a middle part into a container in which is placed a refractory crucible in which is placed the Ni to be evaporated, and adapted to be connected at two terminal zones to an electrical circuit. The crucible is Al203. The invention finds an application in neutron guide fabrication, more particularly for Ni58 vapour deposition on the surfaces of the neutron guide [fr

  4. Advancements, Challenges and Prospects of Chemical Vapour Pressure at Atmospheric Pressure on Vanadium Dioxide Structures

    Directory of Open Access Journals (Sweden)

    Charalampos Drosos

    2018-03-01

    Full Text Available Vanadium (IV oxide (VO2 layers have received extensive interest for applications in smart windows to batteries and gas sensors due to the multi-phases of the oxide. Among the methods utilized for their growth, chemical vapour deposition is a technology that is proven to be industrially competitive because of its simplicity when performed at atmospheric pressure (APCVD. APCVD’s success has shown that it is possible to create tough and stable materials in which their stoichiometry may be precisely controlled. Initially, we give a brief overview of the basic processes taking place during this procedure. Then, we present recent progress on experimental procedures for isolating different polymorphs of VO2. We outline emerging techniques and processes that yield in optimum characteristics for potentially useful layers. Finally, we discuss the possibility to grow 2D VO2 by APCVD.

  5. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique; Etude et realisation de detecteurs de rayonnements a base de films de diamant polycristallin elabores par depot chimique en phase vapeur assiste par plasma micro-onde

    Energy Technology Data Exchange (ETDEWEB)

    Jany, Ch

    1998-10-29

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead {eta} to decrease. In contrast, {eta} was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp{sup 2} phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  6. Formation and Yield of Multi-Walled Carbon Nanotubes Synthesized via Chemical Vapour Deposition Routes Using Different Metal-Based Catalysts of FeCoNiAl, CoNiAl and FeNiAl-LDH

    Directory of Open Access Journals (Sweden)

    Mohd Zobir Hussein

    2014-11-01

    Full Text Available Multi-walled carbon nanotubes (MWCNTs were prepared via chemical vapor deposition (CVD using a series of different catalysts, derived from FeCoNiAl, CoNiAl and FeNiAl layered double hydroxides (LDHs. Catalyst-active particles were obtained by calcination of LDHs at 800 °C for 5 h. Nitrogen and hexane were used as the carrier gas and carbon source respectively, for preparation of MWCNTs using CVD methods at 800 °C. MWCNTs were allowed to grow for 30 min on the catalyst spread on an alumina boat in a quartz tube. The materials were subsequently characterized through X-ray diffraction, Fourier transform infrared spectroscopy, surface area analysis, field emission scanning electron microscopy and transmission electron microscopy. It was determined that size and yield of MWCNTs varied depending on the type of LDH catalyst precursor that is used during synthesis. MWCNTs obtained using CoNiAl-LDH as the catalyst precursor showed smaller diameter and higher yield compared to FeCoNiAl and FeNiAl LDHs.

  7. Characterization of TiO{sub 2} thin films obtained by metal-organic chemical vapour deposition; Caracterizacao de filmes finos de TiO{sub 2} obtidos por deposicao quimica em fase vapor

    Energy Technology Data Exchange (ETDEWEB)

    Carriel, Rodrigo Crociati

    2015-07-01

    Titanium dioxide (TiO{sub 2}) thin films were grown on silicon substrate (100) by MOCVD process (chemical deposition of organometallic vapor phase). The films were grown at 400, 500, 600 and 700 ° C in a conventional horizontal equipment. Titanium tetraisopropoxide was used as source of both oxygen and titanium. Nitrogen was used as carrier and purge gas. X-ray diffraction technique was used for the characterization of the crystalline structure. Scanning electron microscopy with field emission gun was used to evaluate the morphology and thickness of the films. The films grown at 400 and 500°C presented anatase phase. The film grown at 600ºC presented rutile besides anatase phase, while the film grown at 700°C showed, in addition to anatase and rutile, brookite phase. In order to evaluate the electrochemical behavior of the films cyclic voltammetry technique was used. The tests revealed that the TiO2 films formed exclusively by the anatase phase exhibit strong capacitive character. The anodic current peak is directly proportional to the square root of the scanning rate for films grown at 500ºC, suggesting that linear diffusion is the predominant mechanism of cations transport. It was observed that in the film grown during 60 minutes the Na+ ions intercalation and deintercalation easily. The films grown in the other conditions did not present the anodic current peak, although charge was accumulated in the film. (author)

  8. Effects of the ion-solid interaction in glow discharge vapour deposition polymerization of pyromellitic dianhydride

    International Nuclear Information System (INIS)

    Maggioni, G.; Carturan, S.; Rigato, V.; Pieri, U.

    2000-01-01

    Low energy He ion bombardment of pyromellitic dianhydride monomer used in glow discharge vapour deposition polymerization (GDVDP) of polyimide coatings and its effects on the film deposition process have been studied. The sublimation of the monomer molecules and the simultaneous formation of a damaged, carbon-rich surface layer on the target are discussed from a theoretical point of view based on simulations of the ion-solid interaction. Optical emission and mass spectrometry have been used to analyse the species emitted from the target. In order to study the time evolution of the PMDA target damage, the deposition rate of monomer molecules has been monitored. FT-IR spectroscopy has been used to determine the molecular damaging of the target monomer and deposited films

  9. Chemical vapour generation of silver: reduced palladium as permanent reaction modifier for enhanced performance

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Tomáš; Sturgeon, R. E.

    2004-01-01

    Roč. 19, č. 8 (2004), s. 1014-1017 ISSN 0267-9477 R&D Projects: GA ČR GA203/01/0453 Institutional research plan: CEZ:AV0Z4031919 Keywords : chemical vapour generation * chemical modification * silver Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.926, year: 2004

  10. The practical use and application of Monte-Carlo studies in physical vapour deposition technology

    International Nuclear Information System (INIS)

    Elsing, R.

    1991-01-01

    Most of the theory of physical vapour deposition processes has been well researched. There has, however, been little attempt to exploit the theoretical results of this research for practical development of these technologies. This paper develops a computer model for the magnetron sputter ion plating process, in which known physical laws are combined with geometry models of the kind used in computer-aided design technology. The model enables deposition rates and incidence angle distributions to be described for any desired substrate geometry and configuration, taking into account the dominant process parameters. Deposition rates and incidence angle distributions are computed for various film materials and process parameters and are compared with measured values, indicating excellent agreement. A final example shows the dependence of film thickness distribution at the bottom of a slot on a notched component on the geometrical nature of the workpiece itself and on its positioning in the process space. (orig.)

  11. Review of analytical techniques to determine the chemical forms of vapours and aerosols released from overheated fuel

    International Nuclear Information System (INIS)

    Bowsher, B.R.; Nichols, A.L.

    1989-12-01

    A comprehensive review has been undertaken of appropriate analytical techniques to monitor and measure the chemical effects that occur in large-scale tests designed to study severe reactor accidents. Various methods have been developed to determine the chemical forms of the vapours, aerosols and deposits generated during and after such integral experiments. Other specific techniques have the long-term potential to provide some of the desired data in greater detail, although considerable efforts are still required to apply these techniques to the study of radioactive debris. Such in-situ and post-test methods of analysis have been also assessed in terms of their applicability to the analysis of samples from the Phebus-FP tests. The recommended in-situ methods of analysis are gamma-ray spectroscopy, potentiometry, mass spectrometry, and Raman/UV-visible absorption spectroscopy. Vapour/aerosol and deposition samples should also be obtained at well-defined time intervals during each experiment for subsequent post-test analysis. No single technique can provide all the necessary chemical data from these samples, and the most appropriate method of analysis involves a complementary combination of autoradiography, AES, IR, MRS, SEMS/EDS, SIMS/LMIS, XPS and XRD

  12. The effect of air permeability of chemical protective clothing material on clothing vapour resistance

    NARCIS (Netherlands)

    Havenith, G.; Vuister, R.; Wammes, L.

    1996-01-01

    One of the major problems associated with Chemical Warfare Protective Clothing (CW) is the additional heat load created by the garments. For CW-overgarments, research in the direction of reducing material thickness and thus heat and vapour resistance have not resulted in major improvements. The

  13. Heat stress in chemical protective clothing: Porosity and vapour resistance

    NARCIS (Netherlands)

    Havenith, G.; Hartog, E.A. den; Martini, S.

    2011-01-01

    Heat strain in chemical protective clothing is an important factor in industrial and military practice. Various improvements to the clothing to alleviate strain while maintaining protection have been attempted. More recently, selectively permeable membranes have been introduced to improve

  14. Neutron diffraction and thermal studies of amorphous CS2 realised by low-temperature vapour deposition

    International Nuclear Information System (INIS)

    Yamamuro, O.; Matsuo, T.; Onoda-Yamamuro, N.; Takeda, K.; Munemura, H.; Tanaka, S.; Misawa, M.

    2003-01-01

    We have succeeded in preparing amorphous carbon disulphide (CS 2 ) by depositing its vapour on a cold substrate at 10 K. Complete formation of the amorphous state has been confirmed by neutron diffraction and differential thermal analysis (DTA). The amorphous sample crystallized at ca. 70 K, which is lower than the hypothetical glass transition temperature (92 K) estimated from the DTA data of the (CS 2 ) x (S 2 Cl 2 ) 1-x binary mixture. CS 2 , a symmetric linear tri-atomic molecule, is the simplest of the amorphized molecular substances whose structural and thermal information has been reported so far. Comparison of the static structure factors S(Q) has shown that the orientational correlation of CS 2 molecules may be much stronger in the amorphous state than in the liquid state at higher temperature. (authors)

  15. Crystalline gamma-Al2O3 physical vapour deposition-coating for steel thixoforging tools.

    Science.gov (United States)

    Bobzin, K; Hirt, G; Bagcivan, N; Khizhnyakova, L; Ewering, M

    2011-10-01

    The process of thixoforming, which has been part of many researches during the last decades, combines the advantages of forging and casting for the shaping of metallic components. But due to the high temperatures of semi-solid steel alloys high demands on the tools are requested. To resists the thermal and mechanical loads (wear, friction, thermal and thermomechanical fatigue) protecting thin films are necessary. In this regard crystalline gamma-Al2O3 deposited via Physical Vapour Deposition (PVD) is a promising candidate: It exhibits high thermal stability, high oxidation resistance and high hot hardness. In the present work the application of a (Ti, Al)N/gamma-Al2O3 coating deposited by means of Magnetron Sputter Ion Plating in an industrial coating unit is presented. The coating was analysed by means of Rockwell test, nanoindentation, and Scanning Electron Microscopy (SEM). The coated tool was tested in thixoforging experiments with steel grade X210CrW12 (AlSI D6). The surface of the coated dies was examined with Scanning Electron Microscope (SEM) after 22, 42, 90 and 170 forging cycles.

  16. Polymer-based nucleation for chemical vapour deposition of diamond

    Czech Academy of Sciences Publication Activity Database

    Domonkos, Mária; Ižák, Tibor; Kromka, Alexander; Varga, Marián

    2016-01-01

    Roč. 133, č. 29 (2016), 1-7, č. článku 43688. ISSN 0021-8995 R&D Projects: GA ČR GC15-22102J Institutional support: RVO:68378271 Keywords : copolymers * composites * diamond * nucleation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.860, year: 2016

  17. Morphology of silicon carbide formed by chemical vapour deposition

    International Nuclear Information System (INIS)

    Pampuch, R.; Stobierski, L.

    1977-01-01

    Silicon carbide polycrystalline layers and particulate crystals were obtained in a modified van Arkel-de Boer apparatus on SiC-covered graphite and molybdenum susceptors. Gaseous SiCl 4 + CCl 4 + H 2 reactive mixtures with Si/C mole ratios varying between 0.9 and 1.4 and with Cl/Cl + H ratios varying between 2.10 -5 and 1.10 -3 were used. The morphology and structure of SiC products obtained at temperatures between 1400 and 1900 0 C and input gas flow rates between 5.10 -4 and 6.10 -2 moles per hour have been systematically investigated by scanning electronmicrographs, X-rays (using the Laue, Weissenberg, and rotation photographers), IR-spectra, and under the polarising microscope. The ranges of temperature and input gas flow rates in which the given habits and forms of the SiC products are formed have been assessed. The habits of the particulate crystals as function of temperature have been interpreted in terms of the existing theories of heterogeneous nucleation assuming layer growth of the crystals by two-dimensional nucleation. The influence of the composition of the gaseous mixtures upon the formation of the 2H polytype as well as the probable reasons for the common occurrence of stacking fault twins in the 3C polytype have been discussed. (author)

  18. Chemical vapour deposition of vanadium oxide thermochromic thin films

    OpenAIRE

    Piccirillo, Clara

    2012-01-01

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thi...

  19. Chemical vapour transport of pyrite (FeS 2) with halogen (Cl, Br, I)

    Science.gov (United States)

    Fiechter, S.; Mai, J.; Ennaoui, A.; Szacki, W.

    1986-12-01

    A systematic study of chemical vapour transport (CVT) of pyrite with halogen, hydrogen halides and ammonium halides as transporting agents has shown that the transport with chlorine and bromine in a temperature gradient Δ T = 920-820 K yields the highest transport rates (˜6 mg/h) with crystals up to 5 mm edge length. Computing thermochemical equilibria and flux functions in the system Fe-S-Hal (Hal = Cl, Br, I) it has been confirmed that the transport velocity of pyrite is limited by the concentration of FeHal 2 in the vapour phase, the equilibrium position between FeHal 2(g) and FeHal 3(g) and the flux directions of the iron gas species.

  20. Ballistic transport in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Calado, V. E.; Goswami, S.; Xu, Q.; Vandersypen, L. M. K.; Zhu, Shou-En; Janssen, G. C. A. M.; Watanabe, K.; Taniguchi, T.

    2014-01-01

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene

  1. Ballistic transport in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Calado, V. E.; Goswami, S.; Xu, Q.; Vandersypen, L. M. K., E-mail: l.m.k.vandersypen@tudelft.nl [Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands); Zhu, Shou-En; Janssen, G. C. A. M. [Micro and Nano Engineering Laboratory, Precision and Microsystems Engineering, Delft University of Technology, 2628 CD Delft (Netherlands); Watanabe, K.; Taniguchi, T. [Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-01-13

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

  2. Preparation and physical properties of vapour-deposited carbon-carbon composites

    International Nuclear Information System (INIS)

    Loll, Philippe

    1976-01-01

    In its first part, this research thesis reports a bibliographical study on methods of preparation of various types of vapour-deposited (CVD) carbons, and the author notices that only structure and texture properties of these macroscopically homogeneous pyro-carbons have been studied in detail. For a better understanding of the behaviour of carbon-carbon composites, this thesis thus reports the study of the relationships between physical properties, macroscopic texture and microscopic structure. A densification installation and methods of characterisation have been developed. The fabrication process and its installation are presented (oven with its temperature and gas rate controls, study of its thermal gradient, substrate, heat treatments), and the study and characterisation of carbon-carbon composites are reported: structure and texture properties (studied by optic and scanning electronic microscopy, density measurements, and X-ray diffraction), physical properties (electronic paramagnetic resonance, static magnetism, electric and thermal conductivity). In the last part, the author comments and discusses the obtained results: conditions of preparation, existence, physical properties of the different observed microstructures [fr

  3. The vapour phase deposition of boron on titanium by the reaction between gaseous boron trichloride and titanium metal. Final report

    International Nuclear Information System (INIS)

    Cameron, D.J.; Shelton, R.A.J.

    1965-03-01

    The reaction, between boron trichloride vapour and titanium has been investigated in the temperature range 200 - 1350 deg. C. It has been found that an initial reaction leads to the formation of titanium tetrachloride and the deposition of boron on titanium, but that except for reactions between 900 and 1000 deg. C, the system is complicated by the formation of lower titanium chlorides due to secondary reactions between the titanium and titanium tetrachloride

  4. Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defects

    Energy Technology Data Exchange (ETDEWEB)

    Elrawemi, Mohamed, E-mail: Mohamed.elrawemi@hud.ac.uk [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Blunt, Liam; Fleming, Leigh [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Bird, David, E-mail: David.Bird@uk-cpi.com [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Robbins, David [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Sweeney, Francis [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom)

    2014-11-03

    Transparent barrier films such as Al{sub 2}O{sub 3} used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules. However, the existence of micro-scale defects in the barrier surface topography has been shown to have the potential to facilitate water vapour ingress, thereby reducing cell efficiency and causing internal electrical shorts. Previous work has shown that small defects (≤ 3 μm lateral dimension) were less significant in determining water vapour ingress. In contrast, larger defects (≥ 3 μm lateral dimension) seem to be more detrimental to the barrier functionality. Experimental results based on surface topography segmentation analysis and a model presented in this paper will be used to test the hypothesis that the major contributing defects to water vapour transmission rate are small numbers of large defects. The model highlighted in this study has the potential to be used for gaining a better understanding of photovoltaic module efficiency and performance. - Highlights: • A model of water vapour permeation through barrier defects is presented. • The effect of the defects on the water vapour permeability is investigated. • Defect density correlates with water vapour permeability. • Large defects may dominate the permeation properties of the barrier film.

  5. Thermal plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Heberlein, J.; Pfender, E.

    1993-01-01

    Thermal plasmas, with temperatures up to and even exceeding 10 4 K, are capable of producing high density vapor phase precursors for the deposition of relatively thick films. Although this technology is still in its infancy, it will fill the void between the relatively slow deposition processes such as physical vapor deposition and the high rate thermal spray deposition processes. In this chapter, the present state-of-the-art of this field is reviewed with emphasis on the various types of reactors proposed for this emerging technology. Only applications which attracted particular attention, namely diamond and high T c superconducting film deposition, are discussed in greater detail. (orig.)

  6. Chemical Selectivity and Sensitivity of a 16-Channel Electronic Nose for Trace Vapour Detection

    Directory of Open Access Journals (Sweden)

    Drago Strle

    2017-12-01

    Full Text Available Good chemical selectivity of sensors for detecting vapour traces of targeted molecules is vital to reliable detection systems for explosives and other harmful materials. We present the design, construction and measurements of the electronic response of a 16 channel electronic nose based on 16 differential microcapacitors, which were surface-functionalized by different silanes. The e-nose detects less than 1 molecule of TNT out of 10+12 N2 molecules in a carrier gas in 1 s. Differently silanized sensors give different responses to different molecules. Electronic responses are presented for TNT, RDX, DNT, H2S, HCN, FeS, NH3, propane, methanol, acetone, ethanol, methane, toluene and water. We consider the number density of these molecules and find that silane surfaces show extreme affinity for attracting molecules of TNT, DNT and RDX. The probability to bind these molecules and form a surface-adsorbate is typically 10+7 times larger than the probability to bind water molecules, for example. We present a matrix of responses of differently functionalized microcapacitors and we propose that chemical selectivity of multichannel e-nose could be enhanced by using artificial intelligence deep learning methods.

  7. Neutron diffraction and thermal studies of amorphous CS{sub 2} realised by low-temperature vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yamamuro, O.; Matsuo, T. [Osaka Univ., Dept. of Chemistry, Graduate School of Sciences (Japan); Onoda-Yamamuro, N. [Tokyo Denki Univ., College of Sciences and Technology (Japan); Takeda, K. [Naruto Univ., Dept. of Chemistry, Tokushima (Japan); Munemura, H.; Tanaka, S.; Misawa, M. [Niigata Univ. (Japan). Faculty of Science

    2003-08-01

    We have succeeded in preparing amorphous carbon disulphide (CS{sub 2}) by depositing its vapour on a cold substrate at 10 K. Complete formation of the amorphous state has been confirmed by neutron diffraction and differential thermal analysis (DTA). The amorphous sample crystallized at ca. 70 K, which is lower than the hypothetical glass transition temperature (92 K) estimated from the DTA data of the (CS{sub 2}){sub x}(S{sub 2}Cl{sub 2}){sub 1-x} binary mixture. CS{sub 2}, a symmetric linear tri-atomic molecule, is the simplest of the amorphized molecular substances whose structural and thermal information has been reported so far. Comparison of the static structure factors S(Q) has shown that the orientational correlation of CS{sub 2} molecules may be much stronger in the amorphous state than in the liquid state at higher temperature. (authors)

  8. Laser-induced chemical vapor deposition reactions

    International Nuclear Information System (INIS)

    Teslenko, V.V.

    1990-01-01

    The results of investigation of chemical reactions of deposition of different substances from the gas phase when using the energy of pulse quasicontinuous and continuous radiation of lasers in the wave length interval from 0.193 to 10.6 μm are generalized. Main attetion is paid to deposition of inorganic substances including nonmetals (C, Si, Ge and others), metals (Cu, Au, Zn, Cd, Al, Cr, Mo, W, Ni) and some simple compounds. Experimental data on the effect of laser radiation parameters and reagent nature (hydrides, halogenides, carbonyls, alkyl organometallic compounds and others) on the deposition rate and deposit composition are described in detail. Specific features of laser-chemical reactions of deposition and prospects of their application are considered

  9. Investigation and application of microwave electron cyclotron resonance plasma physical vapour deposition

    International Nuclear Information System (INIS)

    Ren Zhaoxing; Sheng Yanya; Shi Yicai; Wen Haihu; Cao Xiaowen

    1991-06-01

    The evaporating deposition of Ti film and Cu film by using microwave electron cyclotron resonance (ECR) technique was investigated. It deposition rate was about 50 nm/min and the temperature of the substrate was 50∼150 deg C. The thin amorphous films with strong adherent force were obtained. The sputtering deposition with ECR plasma was studied by employing higher plasma density and ionicity and negative substrate potential to make YBaCuO superconducting film. Its film was compact and amorphous with a thickness of 1.0 μm and the deposition rate was about 10 nm/min. The results show that this technique can initiate a high density and high ionicity plasma at lower gas pressure (10 -2 ∼10 -3 Pa). This plasma is the most suitable plasma source in thin film deposition process and surface treatment technique

  10. Towards engineered branch placement: Unreal™ match between vapour-liquid-solid glancing angle deposition nanowire growth and simulation

    International Nuclear Information System (INIS)

    Taschuk, M. T.; Tucker, R. T.; LaForge, J. M.; Beaudry, A. L.; Kupsta, M. R.; Brett, M. J.

    2013-01-01

    The vapour-liquid-solid glancing angle deposition (VLS-GLAD) process is capable of producing complex nanotree structures with control over azimuthal branch orientation and height. We have developed a thin film growth simulation including ballistic deposition, simplified surface diffusion, and droplet-mediated cubic crystal growth for the VLS-GLAD process using the Unreal TM Development Kit. The use of a commercial game engine has provided an interactive environment while allowing a custom physics implementation. Our simulation's output is verified against experimental data, including a volumetric film reconstruction produced using focused ion beam and scanning-electron microscopy (SEM), crystallographic texture, and morphological characteristics such as branch orientation. We achieve excellent morphological and texture agreement with experimental data, as well as qualitative agreement with SEM imagery. The simplified physics in our model reproduces the experimental films, indicating that the dominant role flux geometry plays in the VLS-GLAD competitive growth process responsible for azimuthally oriented branches and biaxial crystal texture evolution. The simulation's successful reproduction of experimental data indicates that it should have predictive power in designing novel VLS-GLAD structures

  11. Towards engineered branch placement: Unreal™ match between vapour-liquid-solid glancing angle deposition nanowire growth and simulation

    Science.gov (United States)

    Taschuk, M. T.; Tucker, R. T.; LaForge, J. M.; Beaudry, A. L.; Kupsta, M. R.; Brett, M. J.

    2013-12-01

    The vapour-liquid-solid glancing angle deposition (VLS-GLAD) process is capable of producing complex nanotree structures with control over azimuthal branch orientation and height. We have developed a thin film growth simulation including ballistic deposition, simplified surface diffusion, and droplet-mediated cubic crystal growth for the VLS-GLAD process using the UnrealTM Development Kit. The use of a commercial game engine has provided an interactive environment while allowing a custom physics implementation. Our simulation's output is verified against experimental data, including a volumetric film reconstruction produced using focused ion beam and scanning-electron microscopy (SEM), crystallographic texture, and morphological characteristics such as branch orientation. We achieve excellent morphological and texture agreement with experimental data, as well as qualitative agreement with SEM imagery. The simplified physics in our model reproduces the experimental films, indicating that the dominant role flux geometry plays in the VLS-GLAD competitive growth process responsible for azimuthally oriented branches and biaxial crystal texture evolution. The simulation's successful reproduction of experimental data indicates that it should have predictive power in designing novel VLS-GLAD structures.

  12. Study of a new hybrid process combining slurry infiltration and Reactive Chemical Vapour Infiltration for the realisation of Ceramic Matrix Composites

    International Nuclear Information System (INIS)

    Ledain, Olivier

    2014-01-01

    Ceramic matrix composites were originally developed for aerospace,military aeronautics or energy applications thanks to their good properties at high temperature. They are generally made by Chemical Vapor Infiltration (CVI). A new short hybrid process combining fiber preform slurry impregnation of ceramic powders with an innovative Reactive CVI (RCVI) route is proposed to reduce the production time. This route is based on the combination of Reactive Chemical Vapour Deposition (RCVD), which is often used to deposit coatings on fibres, with the Chemical Vapor Infiltration (CVI).In RCVD, the absence of one element of the deposited carbide in the initial gas phase involves the consumption/conversion of the solid substrate. In this work, the RCVD growth and the associated consumption were studied with different parameters in the Ti-H-Cl-C chemical system. The study has been completed with the chemical products analysis, combining XRD, XPS and FTIR. Then, the partial conversion of sub-micrometer carbon powders into titanium carbide and the consolidation of green bodies by RCVI from H 2 /TiCl 4 gaseous infiltration were studied. The residual porosity and the final TiC content were measured in the bulk of the infiltrated powders by image analysis from scanning electron microscopy. Depending on temperature, few hundred micrometers-depth infiltrations are obtained.Finally, the results have been transposed to the RCVI into CMC-type pre-forms. Despite a minimal TiC content of 25% in the overall preform, the results shown a bad homogeneity of the infiltration and a poor cohesion of fibres with RCVI consolidated powder of their environment. (author) [fr

  13. Surfactant assisted chemical vapour generation of silver for AAS and ICP-OES: a mechanistic study

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Tomáš; Sturgeon, R. E.

    2003-01-01

    Roč. 18, č. 5 (2003), s. 487-494 ISSN 0267-9477 Institutional research plan: CEZ:AV0Z4031919 Keywords : vapour generation * ICP-OES * silver Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.200, year: 2003

  14. Size dependent optical characteristics of chemically deposited

    Indian Academy of Sciences (India)

    Keywords. Thin film; ZnS; CBD method; optical properties. Abstract. ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S2- and Zn2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the ...

  15. Chemical effect on ozone deposition over seawater

    Science.gov (United States)

    Surface layer resistance plays an important role in determining ozone deposition velocity over seawater. Recent studies suggest that surface layer resistance over sea-water is influenced by wind-speed and chemical interaction at the air-water interface. Here, we investigate the e...

  16. Sodium vapour aerosol formation and sodium deposition current work within the United Kingdom

    Energy Technology Data Exchange (ETDEWEB)

    Hawtin, P [Chemical Engineering Division, Atomic Energy Research Establishment, Harwell, Didcot, Oxon (United Kingdom); Seed, G [Nuclear Power Company (Risley) Ltd, Risley, Warrington, Cheshire (United Kingdom)

    1977-01-01

    The significance to reactor operation of sodium transport through the cover gas of a sodium-cooled fast reactor and its subsequent deposition on cooled reactor surfaces is fully appreciated in the UK. A programme of work is therefore underway designed to understand the mechanism of sodium transport under these conditions. This paper described the work which has so far been completed, discussed the work presently in progress, and outlines future plans. (author)

  17. Vapour and electro-deposited metal films on copper: structure and reactivity

    OpenAIRE

    McEvoy, Thomas F.

    2004-01-01

    The systems studied involve deposition of metals of a larger atomic diameter on a Cu{100} single crystal surface under vacuum and determining the structures formed along with the effect on the Cu{100} substrate. Cu microelectrodes were fabricated and characterised with Indium electrodeposited on the electrode surface. The In on Cu{ 100} growth mode is compared with the growth mode of electrodeposited Indium on Cu microelectrodes. The Cu{100}/In system has been studied for the In coverage ...

  18. Functionalization of Hydrogenated Chemical Vapour Deposition-Grown Graphene by On-Surface Chemical Reactions

    Czech Academy of Sciences Publication Activity Database

    Drogowska, Karolina; Kovaříček, Petr; Kalbáč, Martin

    2017-01-01

    Roč. 23, č. 17 (2017), s. 4073-4078 ISSN 0947-6539 R&D Projects: GA MŠk LL1301; GA MŠk(CZ) LM2015073 Grant - others:AVČR PPPLZ(CZ) L200401551 Institutional support: RVO:61388955 Keywords : functionalization * graphene * hydrogen ation * Raman spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 5.317, year: 2016

  19. Functionalization of Hydrogenated Chemical Vapour Deposition-Grown Graphene by On-Surface Chemical Reactions

    Czech Academy of Sciences Publication Activity Database

    Drogowska, Karolina; Kovaříček, Petr; Kalbáč, Martin

    2017-01-01

    Roč. 23, č. 17 (2017), s. 4073-4078 ISSN 0947-6539 R&D Projects: GA MŠk LL1301; GA MŠk(CZ) LM2015073 Grant - others:AVČR PPPLZ(CZ) L200401551 Institutional support: RVO:61388955 Keywords : functionalization * graphene * hydrogenation * Raman spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 5.317, year: 2016

  20. Microstructural and chemical variation of TiO{sub 2} electrodes in DSSCs after ethanol vapour treatment

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yanhui [School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Zhang, Hongzhou, E-mail: hongzhou.zhang@tcd.ie [School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Fox, Daniel [School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Faulkner, Colm C. [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Jeng, David; Bari, Mazhar [SolarPrint Ltd, Dublin 18 (Ireland)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer A simple ethanol vapour post-treatment was applied to the TiO{sub 2} electrode in a DSSC. Black-Right-Pointing-Pointer A stable efficiency improvement was evident after this post-treatment. Black-Right-Pointing-Pointer Structural and chemical modifications of the treatment were systematically investigated using advanced electron microscopy. Black-Right-Pointing-Pointer Morphology changes in favour of the efficiency improvement were identified (increased porosity and reduced TiO{sub 2} particle size). Black-Right-Pointing-Pointer EELS study confirmed that stronger coupling formed between the dye and the treated TiO{sub 2}. - Abstract: TiO{sub 2} based dye-sensitized solar cells (DSSCs) have great potential to solve many energy challenges, however, their low energy conversion rate is still a barrier for further applications. Ethanol vapour post-treatment can improve the DSSC's conversion efficiency without changing its architecture, and a stable 2-3% improvement was found in our experiments. Microstructural and chemical factors were investigated using scanning electron microscopy and analytical electron microscopy on treated and untreated electrodes. The vapour treatment improved the porosity and surface-to-volume ratio of the TiO{sub 2} particles, decreased electron transport loss between TiO{sub 2} and fluorine doped tin oxide, and increased hydroxyl sites on the TiO{sub 2} particle's surface. The modification therefore enhanced the dye uptake and dye-TiO{sub 2} coupling, and it reduced the energy loss during the carrier transfer.

  1. Silver deposition on chemically treated carbon monolith

    Directory of Open Access Journals (Sweden)

    Jovanović Zoran M.

    2009-01-01

    Full Text Available Carbon monolith was treated with HNO3, KOH and H2O2. Effects of these treatments on the surface functional groups and on the amount of silver deposited on the CM surface were studied by temperature programmed desorption (TPD and atomic absorption spectrometry (AAS. As a result of chemical treatment there was an increase in the amount of surface oxygen complexes. The increase in the amount of silver deposit is proportional to the amount of surface groups that produce CO under decomposition. However, the high amount of CO groups, decomposing above 600°C, induces the smaller Ag crystallite size. Therefore, the high temperature CO evolving oxides are, most likely, the initial centers for Ag deposition.

  2. Synthesis and characterization of Bi.sub.1-x./sub.Nd.sub.x./sub.FeO.sub.3./sub. thin films deposited using a high throughput physical vapour deposition technique

    Czech Academy of Sciences Publication Activity Database

    Darby, M.S.B.; Karpinsky, D.V.; Pokorný, Jan; Guerin, D.; Kholkin, A. L.; Miao, S.; Haydn, B.E.; Reaney, I. M.

    2013-01-01

    Roč. 531, MAR (2013), s. 56-60 ISSN 0040-6090 Institutional support: RVO:68378271 Keywords : bismuth ferrite * piezoelectric * neodymium doped * high throughput * combinatorial * physical vapour deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.867, year: 2013 http://www.sciencedirect.com/science/article/pii/S004060901201646X

  3. Determination of electroless deposition by chemical nickeling

    Directory of Open Access Journals (Sweden)

    M. Badida

    2013-07-01

    Full Text Available Increasing of technical level and reliability of machine products in compliance with the economical and ecological terms belongs to the main trends of the industrial development. During the utilisation of these products there arise their each other contacts and the interaction with the environment. That is the reason for their surface degradation by wear effect, corrosion and other influences. The chemical nickel-plating allows autocatalytic deposition of nickel from water solutions in the form of coherent, technically very profitable coating without usage of external source of electric current. The research was aimed at evaluating the surface changes after chemical nickel-plating at various changes of technological parameters.

  4. Advanced deposition model for thermal activated chemical vapor deposition

    Science.gov (United States)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  5. Chemical deposition methods using supercritical fluid solutions

    Science.gov (United States)

    Sievers, Robert E.; Hansen, Brian N.

    1990-01-01

    A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent. A chemical reaction is induced in the resulting mixture so that a film of the desired material is deposited.

  6. Hair analysis as a useful procedure for detection of vapour exposure to chemical warfare agents: simulation of sulphur mustard with methyl salicylate.

    Science.gov (United States)

    Spiandore, Marie; Piram, Anne; Lacoste, Alexandre; Josse, Denis; Doumenq, Pierre

    2014-06-01

    Chemical warfare agents (CWA) are highly toxic compounds which have been produced to kill or hurt people during conflicts or terrorist attacks. Despite the fact that their use is strictly prohibited according to international convention, populations' exposure still recently occurred. Development of markers of exposure to CWA is necessary to distinguish exposed victims from unexposed ones. We present the first study of hair usage as passive sampler to assess contamination by chemicals in vapour form. This work presents more particularly the hair adsorption capacity for methyl salicylate used as a surrogate of the vesicant sulphur mustard. Chemical vapours toxicity through the respiratory route has historically been defined through Haber's law's concentration-time (Ct) product, and vapour exposure of hair to methyl salicylate was conducted with various times or doses of exposure in the range of incapacitating and lethal Ct products corresponding to sulphur mustard. Following exposure, extraction of methyl salicylate from hair was conducted by simple soaking in dichloromethane. Methyl salicylate could be detected on hair for vapour concentration corresponding to about one fifth of the sulphur mustard concentration that would kill 50% of exposed individuals (LCt50). The amount of methyl salicylate recovered from hair increased with time or dose of exposure. It showed a good correlation with the concentration-time product, suggesting that hair could be used like a passive sampler to assess vapour exposure to chemical compounds. It introduces great perspectives concerning the use of hair as a marker of exposure to CWA. Copyright © 2014 John Wiley & Sons, Ltd.

  7. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

    OpenAIRE

    Alassaad, Kassem; Soulière, Véronique; Cauwet, François; Peyre, Hervé; Carole, Davy; Kwasnicki, Pawel; Juillaguet, Sandrine; Kups, Thomas; Pezoldt, Jörg; Ferro, Gabriel

    2014-01-01

    8 pages; International audience; In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth par...

  8. Origin and chemical composition of evaporite deposits

    Science.gov (United States)

    Moore, George William

    1960-01-01

    A comparative study of marine evaporite deposits forming at the present time along the pacific coast of central Mexico and evaporite formations of Permian age in West Texas Basin was made in order to determine if the modern sediments provide a basis for understanding environmental conditions that existed during deposition of the older deposits. The field work was supplemented by investigations of artificial evaporite minerals precipitated in the laboratory and by study of the chemical composition of halite rock of different geologic ages. The environment of deposition of contemporaneous marine salt deposits in Mexico is acidic, is strongly reducing a few centimeters below the surface, and teems with microscopic life. Deposition of salt, unlike that of many other sediments, is not wholly a constructional phenomenon. Permanent deposits result only if a favorable balance exists between deposition in the dry season and dissolution in the wet season. Evaporite formations chosen for special study in the West Texas Basin are, in ascending order, the Castile, Salado, and Rustler formations, which have a combined thickness of 1200 meters. The Castile formation is largely composed of gypsum rock, the Salado, halite rock, and the Rustler, quartz and carbonate sandstone. The lower part of the Castile formation is bituminous and contains limestone laminae. The Castile and Rustler formations thicken to the south at the expense of salt of the intervening Salado formation. The clastic rocks of the Rustler formation are interpreted as the deposits of a series of barrier islands north of which halite rock of the Salado was deposited. The salt is believed to have formed in shallow water of uniform density that was mixed by the wind. Where water depth exceeded the depth of the wind mixing, density stratification developed, and gypsum was deposited. Dense water of high salinity below the density discontinuity was overlain by less dense, more normally saline water which was derived from

  9. Liquid and vapour-phase antifungal activities of selected essential oils against candida albicans: microscopic observations and chemical characterization of cymbopogon citratus

    Directory of Open Access Journals (Sweden)

    Malik Anushree

    2010-11-01

    Full Text Available Abstract Background Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent essential oil. Methods Minimum Inhibitory concentration (MIC of different essential oils in liquid phase, assayed through agar plate dilution, broth dilution & 96-well micro plate dilution method and vapour phase activity evaluated through disc volatilization method. Reduction of C. albicans cells with vapour exposure was estimated by kill time assay. Morphological alteration in treated/untreated C. albicans cells was observed by the Scanning electron microscopy (SEM/Atomic force microscopy (AFM and chemical analysis of the strongest antifungal agent/essential oil has been done by GC, GC-MS. Results Lemon grass (Cymbopogon citratus essential oil exhibited the strongest antifungal effect followed by mentha (Mentha piperita and eucalyptus (Eucalyptus globulus essential oil. The MIC of lemon grass essential oil in liquid phase (288 mg/l was significantly higher than that in the vapour phase (32.7 mg/l and a 4 h exposure was sufficient to cause 100% loss in viability of C. albicans cells. SEM/AFM of C. albicans cells treated with lemon grass essential oil at MIC level in liquid and vapour phase showed prominent shrinkage and partial degradation, respectively, confirming higher efficacy of vapour phase. GC-MS analysis revealed that lemon grass essential oil was dominated by oxygenated monoterpenes (78.2%; α-citral or geranial (36.2% and β-citral or neral (26.5%, monoterpene hydrocarbons (7.9% and sesquiterpene hydrocarbons (3.8%. Conclusion Lemon grass essential oil is highly effective in vapour phase against C. albicans, leading to deleterious

  10. Construction of conductive multilayer films of biogenic triangular gold nanoparticles and their application in chemical vapour sensing

    Science.gov (United States)

    Singh, Amit; Chaudhari, Minakshi; Sastry, Murali

    2006-05-01

    Metal nanoparticles are interesting building blocks for realizing films for a number of applications that include bio- and chemical sensing. To date, spherical metal nanoparticles have been used to generate functional electrical coatings. In this paper we demonstrate the synthesis of electrically conductive coatings using biologically prepared gold nanotriangles as the building blocks. The gold nanotriangles are prepared by the reduction of aqueous chloroaurate ions using an extract of the lemongrass plant (Cymbopogon flexuosus) which are thereafter assembled onto a variety of substrates by simple solution casting. The conductivity of the film shows a drastic fall upon mild heat treatment, leading to the formation of electrically conductive thin films of nanoparticles. We have also investigated the possibility of using the gold nanotriangle films in vapour sensing. A large fall in film resistance is observed upon exposure to polar molecules such as methanol, while little change occurs upon exposure to weakly polar molecules such as chloroform.

  11. Development of new duplex treatments on 100Cr6steel combining Thermochemical Treatments, Laser Shock Peening and Physical Vapour Deposition

    International Nuclear Information System (INIS)

    Osés, J.; Fuentes, G. G.; Santo Domingo, S.; Miguel, I.; Gimeno, S.; Carreras, L.; Peyre, P.; Gorny, C.

    2017-01-01

    100Cr6 steel (AISI 52100) is one of the most used steel grades in the manufacturing of through hardening bearings mainly due to its properties: controlled impurities during steel making process, high hardenability and well known mechanical properties such as wear and fatigue resistance on clean environments. These characteristics play an important role on the performance of a bearing together with the bearing design, loads and environment. However, there is an increasing set of demanding applications where the above mentioned steel does not fulfil the required needs and thus, bearing manufacturers continuously work on the development of technologies to improve the bearing performance. Nowadays thermochemical treatments (TCT), such as carbonitriding are being applied to this steel in order to enhance the performance of such pieces in contaminated environment, where particles can produce defects on the raceway, increasing the onset of defects that eventually lead to premature fail. These treatments induce the formation of carbides and nitrides which are directly related to the enhancement of the wear resistance and also to increasing the amount of Retained Austenite (RA) in the surface which may have a beneficial effect as it delays the crack propagation on subsurface regions, then increasing bearing fatigue life. In this work, different TCTs have been applied to 100Cr6 steel flat samples. Using a tribometer (ball-on-disc configuration) and a grinding machine, surface and in-depth wear resistance measurements have been carried out, obtaining wear resistance profiles that have been correlated with the microstructure, microhardness profiles and RA content. The most promising TCT has been combined either with Laser Shock Peening (LSP) treatments or carbonaceous Physical Vapour Deposition (PVD) coatings with the aim of improving not only the wear resistance but also the CoF of the duplex treated sample. The results obtained on flat samples are promising; the combination

  12. Applicability of chemical vapour polishing of additive manufactured parts to meet production-quality

    DEFF Research Database (Denmark)

    Pedersen, D. B.; Hansen, H. N.; Nielsen, J. S.

    2014-01-01

    The Fused Deposition Modelling (FDM) method is the most rapidly growing Additive Manufacturing (AM) method[1]. FDM employs a 2.5D deposition scheme which induce a step-ladder shaped surface definition [2], with seams of the individual layers clearly visible[3]. This paper investigate to which...... of FDM manufactured parts can be taken from their current quality into the precision engineering domain....

  13. Low-pressure chemical vapor deposition as a tool for deposition of thin film battery materials

    NARCIS (Netherlands)

    Oudenhoven, J.F.M.; Dongen, van T.; Niessen, R.A.H.; Croon, de M.H.J.M.; Notten, P.H.L.

    2009-01-01

    Low Pressure Chemical Vapor Deposition was utilized for the deposition of LiCoO2 cathode materials for all-solid-state thin-film micro-batteries. To obtain insight in the deposition process, the most important process parameters were optimized for the deposition of crystalline electrode films on

  14. Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2016-08-01

    Full Text Available We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA self-assembled monolayer. The HDF-PA self-assembled Al2O3 nanoparticle thin film acts as a liquid-vapour separation filter, allowing the passage of chemical vapour while blocking liquids. Prevention of the liquid from contacting the SnO2 nanowire and source-drain electrodes is required in order to avoid abnormal operation. Using this characteristic, the concentration of chemical substances in water could be evaluated by measuring the current changes in the SnO2 nanowire transistor covered with the HDF-PA self-assembled Al2O3 nanoparticle thin film.

  15. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  16. Optical fibre sensor coated with porous silica layers for gas and chemical vapour detection

    Czech Academy of Sciences Publication Activity Database

    Abdelghani, A.; Chovelon, J. M.; Jaffrezic-Renault, N.; Lacroix, M.; Gagnaire, H.; Veillas, C.; Berková, Daniela; Chomát, Miroslav; Matějec, Vlastimil

    B44, l/3 (1997), s. 495-498 ISSN 0925-4005 R&D Projects: GA ČR GA102/95/0871; GA ČR GA102/96/0939 Grant - others:EU COPERNICUS(XE) CIPA-CT94-0140 Keywords : nonelectric sensing devices * optical fibres * chemical sensors * sol-gel processing Subject RIV: JB - Sensors, Measurment, Regulation Impact factor: 0.858, year: 1997

  17. Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique

    International Nuclear Information System (INIS)

    Patel, Kaushik; Prajapati, Jagdish; Vaidya, Rajiv; Patel, S.G.

    2005-01-01

    Single crystals of the lamellar compound, ZrSe 3 , were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700-1450 nm. The indirect as well as direct band gap of ZrSe 3 were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical resistivity measurements were performed on this crystal in the temperature range 303-423 K. The crystals were found to exhibit semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal. Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting nature of ZrSe 3 single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail. (author)

  18. Chemical deposits in volcanic caves of Argentina

    Directory of Open Access Journals (Sweden)

    Carlos Benedetto

    1998-01-01

    Full Text Available During the last Conference of the FEALC (Speleological Federation of Latin America and Caribbean Islands which was held in the town of Malargue, Mendoza, in February 1997, two volcanic caves not far from that town were visited and sampled for cave mineral studies. The first cave (Cueva del Tigre opens close to the Llancanelo lake, some 40 kms far from Malargue and it is a classical lava tube. Part of the walls and of the fallen lava blocks are covered by white translucent fibres and grains. The second visited cave is a small tectonic cavity opened on a lava bed some 100 km southward of Malargue. The cave “El Abrigo de el Manzano” is long no more than 10-12 meters with an average width of 3 meters and it hosts several bird nests, the larger of which is characterized by the presence of a relatively thick pale yellow, pale pink flowstone. Small broken or fallen samples of the secondary chemical deposits of both these caves have been collected in order to detect their mineralogical composition. In the present paper the results of the detailed mineralogical analyses carried out on the sampled material are shortly reported. In the Cueva del Tigre lava tube the main detected minerals are Sylvite, Thenardite, Bloedite and Kieserite, all related to the peculiar dry climate of that area. The flowstone of “El Abrigo de el Manzano” consists of a rather complex admixture of several minerals, the large majority of which are phosphates but also sulfates and silicates, not all yet identified. The origin of all these minerals is related to the interaction between bird guano and volcanic rock.

  19. Gas analysis during the chemical vapor deposition of carbon

    International Nuclear Information System (INIS)

    Lieberman, M.L.; Noles, G.T.

    1973-01-01

    Gas chromatographic analyses were performed during the chemical vapor deposition of carbon in both isothermal and thermal gradient systems. Such data offer insight into the gas phase processes which occur during deposition and the interrelations which exist between gas composition, deposition rate, and resultant structure of the deposit. The results support a carbon CVD model presented previously. The application of chromatographic analysis to research, development, and full-scale facilities is shown. (U.S.)

  20. Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics

    Science.gov (United States)

    Qi, Junjie; Lan, Yann-Wen; Stieg, Adam Z.; Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong; Zhang, Yue; Wang, Kang L.

    2015-01-01

    High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS2 strain/force sensor built using a monolayer MoS2 triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical–electronic nanodevices. PMID:26109177

  1. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    International Nuclear Information System (INIS)

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  2. Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics

    KAUST Repository

    Qi, Junjie

    2015-06-25

    High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS2 strain/force sensor built using a monolayer MoS2 triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical–electronic nanodevices.

  3. Growth of Self-Catalyzed InP Nanowires by Metalorganic Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Lv Xiao-Long; Zhang Xia; Yan Xin; Liu Xiao-Long; Cui Jian-Gong; Li Jun-Shuai; Huang Yong-Qing; Ren Xiao-Min

    2012-01-01

    The fabrication of self-catalyzed InP nanowires (NWs) is investigated under different growth conditions. Indium droplets induced by surface reconstruction act as nucleation sites for NW growth. Vertical standing NWs with uniform cross sections are obtained under optimized conditions. It is confirmed that the growth rate of NWs is strongly affected by the surface diffusion adatoms while contributions from the direct impingement of vapor species onto the In droplets can be negligible. The results indicate that the droplet acts as an adatom collector rather than a catalyst. Moreover, the diffusion flow rate of adatoms increases with time at the beginning of growth and stabilizes as the growth proceeds

  4. A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Trwoga, P.F.

    1998-01-01

    Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

  5. Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics

    KAUST Repository

    Qi, Junjie; Lan, Yann-Wen; Stieg, Adam Z.; Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong; Zhang, Yue; Wang, Kang L.

    2015-01-01

    High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study

  6. Understanding the chemical vapor deposition of diamond: recent progress

    International Nuclear Information System (INIS)

    Butler, J E; Mankelevich, Y A; Cheesman, A; Ma, Jie; Ashfold, M N R

    2009-01-01

    In this paper we review and provide an overview to the understanding of the chemical vapor deposition (CVD) of diamond materials with a particular focus on the commonly used microwave plasma-activated chemical vapor deposition (MPCVD). The major topics covered are experimental measurements in situ to diamond CVD reactors, and MPCVD in particular, coupled with models of the gas phase chemical and plasma kinetics to provide insight into the distribution of critical chemical species throughout the reactor, followed by a discussion of the surface chemical process involved in diamond growth.

  7. Predicting Vapour Pressures of Organic Compounds from Their Chemical Structure for Classification According to the VOCDirective and Risk Assessment in General

    Directory of Open Access Journals (Sweden)

    Frands Nielsen

    2001-03-01

    Full Text Available The use of organic compounds in the European Union will in the future be regulated in accordance with the Council Directive 1999/13/EC of 11 March 1999 [1]. In this directive, any organic compound is considered to be a volatile organic compound (VOC if it has a vapour pressure of 10 Pa or more at 20oC, or has a corresponding volatility under the particular condition of use. Introduction of such a limit will sometimes create problems, because vapour pressures cannot be determined with an infinite accuracy. Published data on vapour pressures for a true VOC will sometimes be found to be below 10 Pa and vice versa. When the same limit was introduced in the USA, a considerable amount of time and money were spent in vain on comparing incommensurable data [2]. In this paper, a model is presented for prediction of the vapour pressures of VOCs at 20oC from their chemical (UNIFAC structure. The model is implemented in a computer program, named P_PREDICT, which has larger prediction power close to 10 Pa at 20oC than the other models tested. The main advantage of the model, however, is that no experimental data, which will introduce uncertainty in the predictions, is needed. Classification using P_PREDICT, which only predicts one value for a given UNIFAC structure, is proposed. Organic compounds, which can be described by the UNIFAC groups in the present version of P_PREDICT, therefore, can be classified unambiguously as either VOCs or non-VOCs. Most people, including the present authors, feel uneasy about prioritising precision above accuracy. Modelling vapour pressures, however, could save a lot of money and the errors introduced are not large enough to have any substantial adverse effects for neither human beings nor the environment. A method for calculating vapour pressures at other temperatures than 20oC is tested with a dubious result. This method is used for EU risk assessment of new and existing chemicals.

  8. Characterisation of Pristine and Recoated electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings on AISI M2 steel and WC-Co substrates

    International Nuclear Information System (INIS)

    Avelar-Batista, J.C.; Spain, E.; Housden, J.; Fuentes, G.G.; Rebole, R.; Rodriguez, R.; Montala, F.; Carreras, L.J.; Tate, T.J.

    2005-01-01

    This paper is focussed on the characterisation of electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings deposited on AISI M2 steel and hardmetal (K10) substrates in two different conditions: Pristine (i.e., coated) and Recoated (i.e., stripped and recoated). Analytical methods, including X-ray diffraction (XRD), scanning electron microscopy, scratch adhesion and pin-on-disc tests were used to evaluate several coating properties. XRD analyses indicated that both Pristine and Recoated coatings consisted of a mixture of hexagonal Cr 2 N and cubic CrN, regardless of substrate type. For the M2 steel substrate, only small differences were found in terms of coating phases, microstructure, adhesion, friction and wear coefficients between Pristine and Recoated. Recoated on WC-Co (K10) exhibited a less dense microstructure and significant inferior adhesion compared to Pristine on WC-Co (K10). The wear coefficient of Recoated on WC-Co was 100 times higher than those exhibited by all other specimens. The results obtained confirm that the stripping process did not adversely affect the Cr-N properties when this coating was deposited onto M2 steel substrates, but it is clear from the unsatisfactory tribological performance of Recoated on WC-Co that the stripping process is unsuitable for hardmetal substrates

  9. Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

    DEFF Research Database (Denmark)

    2000-01-01

    Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...

  10. Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Ok [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Kang, Woo Seok, E-mail: kang@kimm.re.kr [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of); Hur, Min; Lee, Jin Young [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Song, Young-Hoon [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of)

    2015-12-31

    This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. - Highlights: • Zirconium oxide was deposited by atmospheric-pressure plasma-enhanced chemical vapor deposition. • Homogeneous plasma was maintained by counterbalancing between discharge gas and precursors. • Several deposition steps were observed affected by the gas flow stream and precursor depletion. • Thin film layer was uniformly grown when the substrate underwent a sweeping motion.

  11. Atomic force microscopy indentation of fluorocarbon thin films fabricated by plasma enhanced chemical deposition at low radio frequency power

    International Nuclear Information System (INIS)

    Sirghi, L.; Ruiz, A.; Colpo, P.; Rossi, F.

    2009-01-01

    Atomic force microscopy (AFM) indentation technique is used for characterization of mechanical properties of fluorocarbon (CF x ) thin films obtained from C 4 F 8 gas by plasma enhanced chemical vapour deposition at low r.f. power (5-30 W) and d.c. bias potential (10-80 V). This particular deposition method renders films with good hydrophobic property and high plastic compliance. Commercially available AFM probes with stiff cantilevers (10-20 N/m) and silicon sharpened tips (tip radius < 10 nm) are used for indentations and imaging of the resulted indentation imprints. Force depth curves and imprint characteristics are used for determination of film hardness, elasticity modulus and plasticity index. The measurements show that the decrease of the discharge power results in deposition of films with decreased hardness and stiffness and increased plasticity index. Nanolithography based on AFM indentation is demonstrated on thin films (thickness of 40 nm) with good plastic compliance.

  12. Structural, optical and electrical properties of chemically deposited ...

    Indian Academy of Sciences (India)

    Structural, optical and electrical properties of chemically deposited nonstoichiometric copper ... One of these compounds, CuInSe2, with its optical absorption .... is clear from SEM images that the number of grains goes on increasing with the ...

  13. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  14. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  15. Chemical vapor deposition of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Vyrovets, I.I.; Gritsyna, V.I.; Dudnik, S.F.; Opalev, O.A.; Reshetnyak, O.M.; Strel'nitskij, V.E.

    2008-01-01

    The brief review of the literature is devoted to synthesis of nanocrystalline diamond films. It is shown that the CVD method is an effective way for deposition of such nanostructures. The basic technological methods that allow limit the size of growing diamond crystallites in the film are studied.

  16. Chronic nitrogen deposition influences the chemical dynamics ...

    Science.gov (United States)

    Atmospheric nitrogen deposition induces a forest carbon sink across broad parts of the Northern Hemisphere; this carbon sink may partly result from slower litter decomposition. Although microbial responses to experimental nitrogen deposition have been well-studied, evidence linking these microbial responses to changes in the degradation of specific compounds in decaying litter is sparse. We used wet chemistry and Fourier transform infrared spectroscopy (FTIR) methodologies to study the effects of chronic simulated nitrogen deposition on leaf litter and fine root chemistry during a three-year decomposition experiment at four northern hardwood forests in the north-central USA. Leaf litter and fine roots were highly different in initial chemistry such as concentrations of acid-insoluble fraction (AIF, or Klason lignin) and condensed tannins (CTs). These initial differences persisted over the course of decomposition. Results from gravimetrically-defined AIF and lignin/carbohydrate reference IR peak ratios both provide evidence that lignin in fine roots was selectively preserved under simulated nitrogen deposition. Lignin/carbohydrate peak ratios were strongly correlated with AIF, suggesting that AIF is a good predictor of lignin. Because AIF is abundant in fine roots, slower AIF degradation was the major driver of the slower fine root decomposition under nitrogen enrichment, explaining 73.9 % of the additional root mass retention. Nitrogen enrichment also slowed the

  17. Stress evaluation of chemical vapor deposited silicon dioxide films

    International Nuclear Information System (INIS)

    Maeda, Masahiko; Itsumi, Manabu

    2002-01-01

    Film stress of chemical vapor deposited silicon dioxide films was evaluated. All of the deposited films show tensile intrinsic stresses. Oxygen partial pressure dependence of the intrinsic stress is very close to that of deposition rate. The intrinsic stress increases with increasing the deposition rate under the same deposition temperature, and decreases with increasing substrate temperature. Electron spin resonance (ESR) active defects in the films were observed when the films were deposited at 380 deg. C and 450 deg. C. The ESR signal intensity decreases drastically with increasing deposition temperature. The intrinsic stress correlates very closely to the intensity of the ESR-active defects, that is, the films with larger intrinsic stress have larger ESR-active defects. It is considered that the intrinsic stress was generated because the voids caused by local bond disorder were formed during random network formation among the SiO 4 tetrahedra. This local bond disorder also causes the ESR-active defects

  18. Fission product vapour - aerosol interactions in the containment: simulant fuel studies

    International Nuclear Information System (INIS)

    Beard, A.M.; Benson, C.G.; Bowsher, B.R.

    1988-12-01

    Experiments have been conducted in the Falcon facility to study the interaction of fission product vapours released from simulant fuel samples with control rod aerosols. The aerosols generated from both the control rod and fuel sample were chemically distinct and had different deposition characteristics. Extensive interaction was observed between the fission product vapours and the control rod aerosol. The two dominant mechanisms were condensation of the vapours onto the aerosol, and chemical reactions between the two components; sorption phenomena were believed to be only of secondary importance. The interaction of fission product vapours and reactor materials aerosols could have a major impact on the transport characteristics of the radioactive emission from a degrading core. (author)

  19. Journal of Chemical Sciences | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Chemical vapour deposition (CVD); boron carbide nitride nanotubes (BCNTs); BCNT-modified electrode; NO electrooxidation. ... Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Key Laboratory of Material Chemistry, School of Chemistry and Chemical Engineering, Heilongjiang University, ...

  20. Si substrate by chemical solution deposition

    Indian Academy of Sciences (India)

    ZnMn2O4 active layer for resistance random access memory (RRAM) was ... The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor ... nal electric field were first proposed by Chua (1971). In ... In this work, the spinel ZnMn2O4 films were deposited .... The typical I–V curves plotted in double logarithmic.

  1. Deposition of chemically reactive and repellent sites on biosensor chips for reduced non-specific binding.

    Science.gov (United States)

    Gandhiraman, R P; Gubala, V; Le, N C H; Nam, Le Cao Hoai; Volcke, C; Doyle, C; James, B; Daniels, S; Williams, D E

    2010-08-01

    The performances of new polymeric materials with excellent optical properties and good machinability have led the biomedical diagnostics industry to develop cheap disposable biosensor platforms appropriate for point of care applications. Zeonor, a type of cycloolefin polymer (COP), is one such polymer that presents an excellent platform for biosensor chips. These polymer substrates have to be modified to have suitable physico-chemical properties for immobilizing proteins. In this work, we have demonstrated the amine functionalization of COP substrates, by plasma enhanced chemical vapour deposition (PECVD), through codeposition of ethylene diamine and 3-aminopropyltriethoxysilane precursors, for building chemistries on the plastic chip. The elemental composition, adhesion, ageing and reactivity of the plasma polymerized film were examined. The Si-O functionality present in amino silane contributed for a good interfacial adhesion of the coating to COP substrates and also acted as a network building layer for plasma polymerization. Wet chemical modification was then carried out on the amine functionalized chips to create chemically reactive isothiocyanate sites and protein repellent fluorinated sites on the same chip. The density of the reactive and repellent sites was altered by choosing appropriate mixtures of homofunctional phenyldiisothiocyanate (PDITC), pentafluoroisothiocyanate (5FITC) and phenylisothiocyanate (PITC) compounds. By tailoring the density of reactive binding sites and protein repellent sites, the non-specific binding of ssDNA has been decreased to a significant extent. Copyright 2010 Elsevier B.V. All rights reserved.

  2. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

  3. The chemical vapor deposition of zirconium carbide onto ceramic substrates

    International Nuclear Information System (INIS)

    Glass A, John Jr.; Palmisiano, Nick Jr.; Welsh R, Edward

    1999-01-01

    Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system

  4. Chemical solution deposition techniques for epitaxial growth of complex oxides

    NARCIS (Netherlands)

    ten Elshof, Johan E.; Koster, G.; Huijben, Mark; Rijnders, G.

    2015-01-01

    The chemical solution deposition (CSD) process is a wet-chemical process that is employed to fabricate a wide variety of amorphous and crystalline oxide thin films. This chapter describes the typical steps in a CSD process and their influence on the final microstructure and properties of films, and

  5. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  6. Tandem solar cells deposited using hot-wire chemical vapor deposition

    NARCIS (Netherlands)

    Veen, M.K. van

    2003-01-01

    In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique

  7. CdS films deposited by chemical bath under rotation

    International Nuclear Information System (INIS)

    Oliva-Aviles, A.I.; Patino, R.; Oliva, A.I.

    2010-01-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl 2 , KOH, NH 4 NO 3 and CS(NH 2 ) 2 as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  8. CdS films deposited by chemical bath under rotation

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

    2010-08-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  9. Chemical vapor deposition of tetraboron silicide whiskers

    International Nuclear Information System (INIS)

    Motozima, Seizi; Sugiyama, Kozoh; Takahashi, Yasutaka

    1975-01-01

    Growth conditions of B 4 Si whiskers were investigated at the temperature range of 1000 - 1100 0 C. Optimum composition of halides was determined as BCl 3 /SiCl 4 =2 - 0.5, and BCl 3 =1 - 6 vol%, SiCl 4 =1 - 7 vol%. Gold had an excellent impurity effect with optimum concentration of 20 - 50 μg/cm 2 on whisker growth, and gave wool like whiskers of 0.1 - 1 μ in thickness and 0.5 - 2 mm in length. B 4 Si whisker growth was explained in terms of a tip VLS mechanism, for a drop-like deposit of impurity was observed on each tip. (auth.)

  10. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  11. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source...... effect of single-layer coatings deposited under different reaction conditions was studied. The coating thickness and the carbon content in the coatings were found to be the critical parameters for the barrier property. The novel barrier coating was applied on different polymeric materials...

  12. 3D-printed poly(vinylidene fluoride)/carbon nanotube composites as a tunable, low-cost chemical vapour sensing platform

    Energy Technology Data Exchange (ETDEWEB)

    Kennedy, Z. C.; Christ, J. F.; Evans, K. A.; Arey, B. W.; Sweet, L. E.; Warner, M. G.; Erikson, R. L.; Barrett, C. A.

    2017-01-01

    We report the production of flexible, highly-conductive poly(vinylidene flouride) (PVDF) and multi-walled carbon nanotube (MWCNT) composites as filament feedstock for 3D-printing. This account further describes, for the first-time, fused deposition modelling (FDM) derived 3D-printed objects with chemiresistive properties in response to volatile organic compounds. The typically prohibitive thermal expansion and die swell characteristics of PVDF were minimized by the presence of MWCNTs in the composites enabling straightforward processing and printing. The nanotubes form a dispersed network as characterized by helium ion microscopy, contributing to excellent conductivity (1 x 10-2 S / cm). The printed composites contain little residual metal particulate relative to parts from commercial PLA-nanocomposite material visualized by micro X-ray computed tomography (μ-CT) and corroborated with thermogravimetric analysis. Printed sensing strips, with MWCNT loadings up to 15 % mass, function as reversible vapour sensors with the strongest responses arising with organic compounds capable of readily intercalating, and subsequently swelling the PVDF matrix (acetone and ethyl acetate). A direct correlation between MWCNT concentration and resistance change was also observed, with larger responses (up to 161 % after 3 minutes) generated with decreased MWCNT loadings. These findings highlight the utility of FDM printing in generating low-cost sensors that respond strongly and reproducibly to target vapours. Furthermore, the sensors can be easily printed in different geometries, expanding their utility to wearable form factors. The proposed formulation strategy may be tailored to sense diverse sets of vapour classes through structural modification of the polymer backbone and/or functionalization of the nanotubes within the composite.

  13. Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

    2001-01-01

    Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

  14. Effects of deposition time in chemically deposited ZnS films in acidic solution

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

    2015-08-31

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

  15. Networks of ultra-fine Ag nanocrystals in a Teflon AF (registered) matrix by vapour phase e-beam-assisted deposition

    International Nuclear Information System (INIS)

    Biswas, A; Bayer, I S; Marken, B; Pounds, T D; Norton, M G

    2007-01-01

    We have fabricated nanocomposite thin films comprising silver (Ag) nanoparticles dispersed in a Teflon AF (registered) polymer matrix using electron-beam-assisted physical vapour deposition. Four different Ag nanoparticle volume fillings (20%, 35%, 70% and 75%) were achieved by varying the relative metal-polymer evaporation rates with the formation of highly crystalline Ag nanoparticles regardless of the filling ratio. The present fabrication technique allowed full control over dispersion uniformity of nanoparticles in the polymer network. At 20% and 35% metal volume fillings, the nanocomposite film morphology consists of a uniformly dispersed assembly of equiaxed isolated Ag nanoparticles. At higher metal volume fractions the nanocomposite structures displayed two different and unique Ag nanoparticle arrangements within the polymer matrix. In particular, at 70% metal filling, the formation of irregularly shaped clusters of individually assembled nanocrystals was observed. At a slightly higher volume filling (75%), larger irregularly shaped Ag nanocrystals that appeared to be the result of coalescence and grain growth were observed. Finally, a composite theory developed by Tandon and Weng was used to estimate various elastic properties of the nanocomposite films. At high metal filling, the reinforcing effect of the Ag nanoparticles was reflected as approximately a sixfold increase in the elastic modulus compared to the virgin polymer film. Possible applications of such ultra-fine metal nanoparticles networks are discussed

  16. Fabrication and evaluation of chemically vapor deposited tungsten heat pipe.

    Science.gov (United States)

    Bacigalupi, R. J.

    1972-01-01

    A network of lithium-filled tungsten heat pipes is being considered as a method of heat extraction from high temperature nuclear reactors. The need for material purity and shape versatility in these applications dictates the use of chemically vapor deposited (CVD) tungsten. Adaptability of CVD tungsten to complex heat pipe designs is shown. Deposition and welding techniques are described. Operation of two lithium-filled CVD tungsten heat pipes above 1800 K is discussed.

  17. Chemical solution deposition: a path towards low cost coated conductors

    International Nuclear Information System (INIS)

    Obradors, X; Puig, T; Pomar, A; Sandiumenge, F; Pinol, S; Mestres, N; Castano, O; Coll, M; Cavallaro, A; Palau, A; Gazquez, J; Gonzalez, J C; Gutierrez, J; Roma, N; Ricart, S; Moreto, J M; Rossell, M D; Tendeloo, G van

    2004-01-01

    The achievement of low cost deposition techniques for high critical current YBa 2 Cu 3 O 7 coated conductors is one of the major objectives to achieve a widespread use of superconductivity in power applications. Chemical solution deposition techniques are appearing as a very promising methodology to achieve epitaxial oxide thin films at a low cost, so an intense effort is being carried out to develop routes for all chemical coated conductor tapes. In this work recent achievements will be presented towards the goal of combining the deposition of different type of buffer layers on metallic substrates based on metal-organic decomposition with the growth of YBa 2 Cu 3 O 7 layers using the trifluoroacetate route. The influence of processing parameters on the microstructure and superconducting properties will be stressed. High critical currents are demonstrated in 'all chemical' multilayers

  18. Chemical vapor deposition (CVD) of uranium for alpha spectrometry

    International Nuclear Information System (INIS)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F.

    2015-09-01

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  19. Metalorganic chemical vapor deposition of iron disulfide and its use for solar energy conversion

    Science.gov (United States)

    Ennaoui, Ahmed; Fiechter, Sebastian; Vogel, Ralf; Giersig, M.; Weller, Horst; Tributsch, Helmut

    1992-12-01

    Thin polycrystalline films of iron disulfide have been grown on different substrates by chemical vapour deposition. The films were characterized using optical absorption and TEM. RBS and EDAX analysis has been used to explore the chemical stoichiometry. XRD and FTIR allowed the identification of both FeS2 phases pyrite and marcasite. A novel method for sensitization of highly porous Ti02 elecrodes with ultra thin (10-20 nm) polycrystalline films of FeS2 (pyrite) is presented. Photoelectrochemical solar cell using the above electrode generated high photovoltage of up to 600mV compared with single crystalline electrode (200 mV). In this device the semiconductor with a small band gap and high absorption coefficient (FeS2 pyrite; EG = 0.9 eV; a = 6 x 105 cm-1) absorbs the light and injects electrons into the conduction band the wide band gap semiconductor (Ti02 anatase; EG = 3.2 eV). Regeneration of holes is taking place by electron transfer from redox system in the electrolyte.

  20. Chemical vapor deposition: A technique for applying protective coatings

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, T.C. Sr.; Bowman, M.G.

    1979-01-01

    Chemical vapor deposition is discussed as a technique for applying coatings for materials protection in energy systems. The fundamentals of the process are emphasized in order to establish a basis for understanding the relative advantages and limitations of the technique. Several examples of the successful application of CVD coating are described. 31 refs., and 18 figs.

  1. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  2. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  3. ZnSe thin films by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Patil, P.S.; Tributsch, H. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CS, Glienicker Strasse-100, D-14109 Berlin (Germany); Ennaoui, A. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CG, Glienicker Strasse-100, D-14109 Berlin (Germany)

    1998-09-04

    The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX, TRMC (time-resolved microwave conductivity), optical absorbance and RBS techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV

  4. Preparation of hafnium carbide by chemical vapor deposition

    International Nuclear Information System (INIS)

    Hertz, Dominique.

    1974-01-01

    Hard, adhesive coatings of single-phase hafnium carbide were obtained by chemical vapor reaction in an atmosphere containing hafnium tetrachloride, methane and a large excess of hydrogen. By varying the gas phase composition and temperature the zones of formation of the different solid phases were studied and the growth of elementary hafnium and carbon deposits evaluated separately. The results show that the mechanism of hafnium carbide deposition does not hardly involve phenomene of homogeneous-phase methane decomposition or tetrachloride reduction by hydrogen unless the atmosphere is very rich or very poor in methane with respect to tetrachloride. However, hydrogen acting inversely on these two reactions, affects the stoichiometry of the substance deposited. The methane decomposition reaction is fairly slow, the reaction leading to hafnium carbide deposition is faster and that of tetrachloride reduction by hydrogen is quite fast [fr

  5. Surface polish of PLA parts in FDM using dichloromethane vapour

    Directory of Open Access Journals (Sweden)

    Jin Yifan

    2017-01-01

    Full Text Available Fused deposition modelling has become one of the most diffused rapid prototyping techniques, which is widely used to fabricate prototypes. However, further application of this technology is severely limited by poor surface roughness. Thus it is necessary to adopt some operations to improve surface quality. Chemical finishing is typically employed to finish parts in fused deposition modelling (FDM. The purpose of this paper is to decrease the surface roughness for polylactic acid (PLA parts in FDM. The chemical reaction mechanism during the treating process is analysed. Then NaOH solution and dichloromethane vapour are used to treat FDM specimens respectively. A 3D laser microscope has been applied to assess the effects in terms of surface topography and roughness. The experimental results show that treatment using dichloromethane vapour performs much better than NaOH solution. Compared with the untreated group, surface roughness obtained through vapour treatment decreases by 88 per cent. This research has been conducted to provide a better method to treat PLA parts using chemical reagents.

  6. Atomic layer deposition of Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/TiO{sub 2} barrier coatings to reduce the water vapour permeability of polyetheretherketone

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadzada, Tamkin, E-mail: tahm4852@uni.sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, NSW 2006 (Australia); McKenzie, David R.; James, Natalie L.; Yin, Yongbai [School of Physics, University of Sydney, NSW 2006 (Australia); Li, Qing [School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, NSW 2006 (Australia)

    2015-09-30

    We demonstrate significantly enhanced barrier properties of polyetheretherketone (PEEK) against water vapour penetration by depositing Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/TiO{sub 2} nanofilms grown by atomic layer deposition (ALD). Nanoindentation analysis revealed good adhesion strength of a bilayer Al{sub 2}O{sub 3}/TiO{sub 2} coating to PEEK, while the single layer Al{sub 2}O{sub 3} coating displayed flaking and delamination. We identified three critical design parameters for achieving the optimum barrier properties of ALD Al{sub 2}O{sub 3}/TiO{sub 2} coatings on PEEK. These are a minimum total thickness dependent on the required water vapour transmission rate, the use of an Al{sub 2}O{sub 3}/TiO{sub 2} bilayer coating and the application of the coating to both sides of the PEEK film. Using these design parameters, we achieved a reduction in moisture permeability of PEEK of over two orders of magnitude while maintaining good adhesion strength of the polymer–thin film system. - Highlights: • Atomic layer deposition of Al{sub 2}O{sub 3}/TiO{sub 2} coatings reduced water vapour permeability. • Bilayer coatings reduced the permeability more than single layer coatings. • Bilayer coatings displayed higher adhesion strength than the single layer coatings. • Double-sided coatings performed better than single-sided coatings. • Correlation was found between total thickness and reduced water vapour permeability.

  7. Vertically aligned carbon nanotube growth by pulsed laser deposition and thermal chemical vapor deposition methods

    International Nuclear Information System (INIS)

    Sohn, Jung Inn; Nam, Chunghee; Lee, Seonghoon

    2002-01-01

    We have grown vertically aligned carbon nanotubes on the various substrates such as a planar p-type Si(1 0 0) wafer, porous Si wafer, SiO 2 , Si 3 N 4 , Al 2 O 3 , and Cr by thermal chemical vapor deposition (CVD) at 800 deg.C, using C 2 H 2 gas as a carbon source and Fe catalyst films deposited by a pulsed laser on the substrates. The Fe films were deposited for 5 min by pulsed laser deposition (PLD). The advantage of Fe deposition by PLD over other deposition methods lies in the superior adhesion of Fe to a Si substrate due to high kinetic energies of the generated Fe species. Scanning electron microscopy (SEM) images show that vertically well-aligned carbon nanotubes are grown on Fe nanoparticles formed from the thermal annealing of the Fe film deposited by PLD on the various substrates. Atomic force microscopy (AFM) images show that the Fe film annealed at 800 deg.C is broken to Fe nanoparticles of 10-50 nm in size. We show that the appropriate density of Fe nanoparticles formed from the thermal annealing of the film deposited by PLD is crucial in growing vertically aligned carbon nanotubes. Using a PLD and a lift-off method, we developed the selective growth of carbon nanotubes on a patterned Fe-coated Si substrate

  8. Kinetics of chemical vapor deposition of boron on molybdenum

    International Nuclear Information System (INIS)

    Tanaka, W.; Nakaanishi, N.; Kato, E.

    1987-01-01

    Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The reaction orders with respect to the partial pressures of hydrogen and boron trichloride are one half and one third, respectively. It has been found that the outer layer of a deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB by the use of X-ray diffraction and EPMA line analysis

  9. How deposition parameters control growth dynamics of nc-Si deposited by hot-wire chemical vapor deposition

    International Nuclear Information System (INIS)

    Moutinho, H.R.; To, B.; Jiang, C.-S.; Xu, Y.; Nelson, B.P.; Teplin, C.W.; Jones, K.M.; Perkins, J.; Al-Jassim, M.M.

    2006-01-01

    We studied the growth of silicon films deposited by hot-wire chemical vapor deposition under different values of filament current, substrate temperature, and hydrogen dilution ratio. The physical and electrical properties of the films were studied by Raman spectroscopy, x-ray diffraction, atomic force microscopy, conductive-atomic force microscopy, and transmission electron microscopy. There is an interdependence of the growth parameters, and films grown with different parameters can have similar structures. We discuss why this interdependence occurs and how it influences the properties of the deposited films, as well as the deposition rate. In general, the films have a complex structure, with a mixture of amorphous (220)-oriented crystalline and nanocrystalline phases present in most cases. The amount of each phase can be controlled by the variation of one or more of the growth parameters at a time

  10. The versatility of hot-filament activated chemical vapor deposition

    International Nuclear Information System (INIS)

    Schaefer, Lothar; Hoefer, Markus; Kroeger, Roland

    2006-01-01

    In the field of activated chemical vapor deposition (CVD) of polycrystalline diamond films, hot-filament activation (HF-CVD) is widely used for applications where large deposition areas are needed or three-dimensional substrates have to be coated. We have developed processes for the deposition of conductive, boron-doped diamond films as well as for tribological crystalline diamond coatings on deposition areas up to 50 cm x 100 cm. Such multi-filament processes are used to produce diamond electrodes for advanced electrochemical processes or large batches of diamond-coated tools and parts, respectively. These processes demonstrate the high degree of uniformity and reproducibility of hot-filament CVD. The usability of hot-filament CVD for diamond deposition on three-dimensional substrates is well known for CVD diamond shaft tools. We also develop interior diamond coatings for drawing dies, nozzles, and thread guides. Hot-filament CVD also enables the deposition of diamond film modifications with tailored properties. In order to adjust the surface topography to specific applications, we apply processes for smooth, fine-grained or textured diamond films for cutting tools and tribological applications. Rough diamond is employed for grinding applications. Multilayers of fine-grained and coarse-grained diamond have been developed, showing increased shock resistance due to reduced crack propagation. Hot-filament CVD is also used for in situ deposition of carbide coatings and diamond-carbide composites, and the deposition of non-diamond, silicon-based films. These coatings are suitable as diffusion barriers and are also applied for adhesion and stress engineering and for semiconductor applications, respectively

  11. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  12. Structural characterization of chemically deposited PbS thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.A.; Gonzalez-Alfaro, Y.; Larramendi, E.M.; Fonseca Filho, H.D.; Maia da Costa, M.E.H.; Freire, F.L.; Prioli, R.; Avillez, R.R. de; Silveira, E.F. da; Calzadilla, O.; Melo, O. de; Pedrero, E.; Hernandez, E.

    2007-01-01

    Polycrystalline thin films of lead sulfide (PbS) grown using substrate colloidal coating chemical bath depositions were characterized by RBS, XPS, AFM and GIXRD techniques. The films were grown on glass substrates previously coated with PbS colloidal particles in a polyvinyl alcohol solution. The PbS films obtained with the inclusion of the polymer showed non-oxygen-containing organic contamination. All samples maintained the Pb:S 1:1 stoichiometry throughout the film. The amount of effective nucleation centers and the mean grain size have being controlled by the substrate colloidal coating. The analysis of the polycrystalline PbS films showed that a preferable (1 0 0) lattice plane orientation parallel to the substrate surface can be obtained using a substrate colloidal coating chemical bath deposition, and the orientation increases when a layer of colloid is initially dried on the substrate

  13. Physical-chemical and technological aspects of the preparation of think layers of the high temperature superconductors Bi-Sr-Ca-Cu-O by method of metal organic vapour phase epitaxy

    International Nuclear Information System (INIS)

    Stejskal, J.; Nevriva, M.; Leitner, J.

    1995-01-01

    The method of metal organic vapour phase epitaxy (MO VPE) was used for preparation of think layers of the high temperature superconductors Bi-Sr-Ca-Cu-O. The suitable chemical precursors (β-diketonates) on the literature data and of the own thermodynamic calculations were selected. The optimal thermodynamic data and thermodynamic stability of the prepared samples were determined

  14. Research on chemical vapor deposition processes for advanced ceramic coatings

    Science.gov (United States)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  15. GE NANOCLUSTERS IN PLANAR GLASS WAVEGUIDES DEPOSITED BY PECVD

    DEFF Research Database (Denmark)

    Haiyan, Ou; Olsen, Johnny H.; Rottwitt, Karsten

    2004-01-01

    Germanium (Ge) has been widely used as the dopant in the core layer of planar glass waveguides to increase the refractive index because it gives a small propagation loss. Plasma enhanced chemical vapour deposition (PECVD) and flame hydrolysis deposition (FHD) are two main material deposition meth...

  16. Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

    Science.gov (United States)

    Baril, Neil F; He, Rongrui; Day, Todd D; Sparks, Justin R; Keshavarzi, Banafsheh; Krishnamurthi, Mahesh; Borhan, Ali; Gopalan, Venkatraman; Peacock, Anna C; Healy, Noel; Sazio, Pier J A; Badding, John V

    2012-01-11

    Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells. © 2011 American Chemical Society

  17. Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Feng, Z.C.; Liu, W.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Yang, T.R.; Zhao, J.

    2006-01-01

    The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully

  18. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  19. Deposition characteristics of titanium coating deposited on SiC fiber by cold-wall chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Xian, E-mail: luo_shenfan@hotmail.com; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

    2016-12-01

    The deposition characteristics of titanium coating on SiC fiber using TiCl{sub 4}-H{sub 2}-Ar gas mixture in a cold-wall chemical vapor deposition were studied by the combination of thermodynamic analysis and experimental studies. The thermodynamic analysis of the reactions in the TiCl{sub 4}-H{sub 2}-Ar system indicates that TiCl{sub 4} transforms to titanium as the following paths: TiCl{sub 4} → TiCl{sub 3} → Ti, or TiCl{sub 4} → TiCl{sub 3} → TiCl{sub 2} → Ti. The experimental results show that typical deposited coating contains two distinct layers: a TiC reaction layer close to SiC fiber and titanium coating which has an atomic percentage of titanium more than 70% and that of carbon lower than 30%. The results illustrate that a carbon diffusion barrier coating needs to be deposited if pure titanium is to be prepared. The deposition rate increases with the increase of temperature, but higher temperature has a negative effect on the surface uniformity of titanium coating. In addition, appropriate argon gas flow rate has a positive effect on smoothing the surface morphology of the coating. - Highlights: • Both thermodynamic analysis and experimental studies were adopted in this work. • The transformation paths of TiCl{sub 4} to Ti is: TiCl{sub 4} → TiCl{sub 3} → Ti, or TiCl{sub 4} → TiCl{sub 3} → TiCl{sub 2} → Ti. • Typical deposited Ti coating on SiC fiber contained two distinct layers. • Deposition temperature is important on deposition rate and morphologies. • Appropriate argon gas flow rate has a positive effect on smoothing of the coating.

  20. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    Abstract. Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ... Cadmium sulfide; chemical bath deposition; doping; optical window. 1. ..... at low temperature (10 K), finding similar trends than.

  1. Transport mechanisms through PE-CVD coatings: influence of temperature, coating properties and defects on permeation of water vapour

    International Nuclear Information System (INIS)

    Kirchheim, Dennis; Jaritz, Montgomery; Hopmann, Christian; Dahlmann, Rainer; Mitschker, Felix; Awakowicz, Peter; Gebhard, Maximilian; Devi, Anjana; Brochhagen, Markus; Böke, Marc

    2017-01-01

    Gas transport mechanisms through plastics are usually described by the temperature-dependent Arrhenius-model and compositions of several plastic layers are represented by the CLT. When it comes to thin films such as plasma-enhanced chemical vapour deposition (PE-CVD) or plasma-enhanced atomic layer deposition (PE-ALD) coatings on substrates of polymeric material, a universal model is lacking. While existing models describe diffusion through defects, these models presume that permeation does not occur by other means of transport mechanisms. This paper correlates the existing transport models with data from water vapour transmission experiments. (paper)

  2. Short review on chemical bath deposition of thin film and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Mugle, Dhananjay, E-mail: dhananjayforu@gmail.com; Jadhav, Ghanshyam, E-mail: ghjadhav@rediffmail.com [Depertment of Physics, Shri Chhatrapati Shivaji College, Omerga-413606 (India)

    2016-05-06

    This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

  3. Thermodynamic approach to the conditions of chemical deposition of boron by contact with an inert substrate

    International Nuclear Information System (INIS)

    Thebault, J.; Naslain, R.; Hagenmuller, P.; Bernard, C.

    1978-01-01

    The optimum conditions for the synthesis of boron by chemical vapour deposition (CVD) from BCl 3 -H 2 or BBr 3 -H 2 mixtures onto an inert substrate (boron or boronized metals) have been studied by a thermodynamic approach. This approach, which postulates that states close to equilibrium are reached in the vicinity of the hot substrate, is based on the minimization of the total Gibbs free energy of the system. Between 1200 and 1900 K and under a total pressure of 1 atm, the hydrogen reduction of BCl 3 can lead to two types of by-products: BHCl 2 at all temperatures, and BCl 2 or BCl subhalides at high temperatures; BHCl 2 is the main product of the reduction at the lowest temperatures. The hydrogen reduction of BCl 3 is never complete for the conditions commonly used for the synthesis of boron. The amount of by-products and of BBr 3 which must be recycled can be minimized by utilizing BCl 3 -H 2 mixtures rich in hydrogen. The amount of boron deposited exhibits a maximum for a temperature close to 1700 K. Similar results have been obtained for BBr 3 . However, between 1000 and 1500 K and under a total pressure of 1 atm the amount of by-products (BHBr 2 and BBr 2 ) is smaller than in the case of BCl 3 . The boron yield from the reduction of BBr 3 is higher than that from BCl 3 and the percentage of boron halide which must be recycled is lower in the case of BBr 3 . Thus, BBr 3 appears to be a better source than BCl 3 for the CVD of boron. (Auth.)

  4. TL and OSL studies on undoped diamond films grown by hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Soni, Anuj, E-mail: anujsoni.phy@gmail.com [Radiological Physics and Advisory Division, Bhabha Atomic Research Center, Mumbai 400 085 (India); Choudhary, R.K. [Materials Processing Division, Bhabha Atomic Research Center, Mumbai 400 085 (India); Polymeris, G.S. [Ankara University, Institute of Nuclear Sciences (Turkey); Mishra, D.R. [Radiological Physics and Advisory Division, Bhabha Atomic Research Center, Mumbai 400 085 (India); Mishra, P. [Materials Processing Division, Bhabha Atomic Research Center, Mumbai 400 085 (India); Kulkarni, M.S. [Radiation Safety Systems Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)

    2016-09-15

    In this work, approximately 0.5 µm thick diamond films were grown on a silicon substrate by hot filament chemical vapour deposition (HFCVD) method in a gas mixture of hydrogen and methane. The batch to batch reproducibility of the sample using this technique was found to be very good. The obtained film was characterized by micro laser Raman spectroscopy (MLRS), grazing incidence X-ray diffractometry (GIXRD), scanning electron microscopy (SEM) and atomic force miscroscopy (AFM) techniques. MLRS and GIXRD results confirmed the formation of diamond whereas SEM and AFM analyses indicated uniform morphology of the film with an average grain size of 200 nm. The deposited film was studied for ionizing radiation dosimetry applications using the thermoluminescence (TL) and optically stimulated luminescence (OSL) techniques after irradiating the film by a calibrated 5 mCi, {sup 90}Sr/{sup 90}Y beta source. In the TL measurement, for a heating rate of 4 K/s, broad glow curve was obtained which was deconvoluted into seven TL peaks. The integrated TL counts were found to vary linearly with increasing the radiation dose up to 10 kGy. The characteristic TL output seen in the temperature range 200–300 °C, may be considered good for thermal stability of the film and it could also avoid TL fading during storage and non-interference of any black body radiation during the measurement. However, in comparison to TL output, the OSL response for 470 nm LED stimulation was found to be lesser. The CW–OSL decay curve has shown two components contributing to the OSL signal, having photoionization cross-section 1.5×10{sup −18} and 5.2×10{sup −19} cm{sup 2} respectively. The studies have revealed the possibility of using diamond film for high dose radiation dosimetry with TL/OSL method.

  5. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  6. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  7. Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells

    International Nuclear Information System (INIS)

    Avellaneda, David; Delgado, Guadalupe; Nair, M.T.S.; Nair, P.K.

    2007-01-01

    Chemically deposited SnS thin films possess p-type electrical conductivity. We report a photovoltaic structure: SnO 2 :F-CdS-SnS-(CuS)-silver print, with V oc > 300 mV and J sc up to 5 mA/cm 2 under 850 W/m 2 tungsten halogen illumination. Here, SnO 2 :F is a commercial spray-CVD (Pilkington TEC-8) coating, and the rest deposited from different chemical baths: CdS (80 nm) at 333 K, SnS (450 nm) and CuS (80 nm) at 293-303 K. The structure may be heated in nitrogen at 573 K, before applying the silver print. The photovoltaic behavior of the structure varies with heating: V oc ∼ 400 mV and J sc 2 , when heated at 423 K in air, but V oc decreases and J sc increases when heated at higher temperatures. These photovoltaic structures have been found to be stable over a period extending over one year by now. The overall cost of materials, simplicity of the deposition process, and possibility of easily varying the parameters to improve the cell characteristics inspire further work. Here we report two different baths for the deposition of SnS thin films of about 500 nm by chemical deposition. There is a considerable difference in the nature of growth, crystalline structure and chemical stability of these films under air-heating at 623-823 K or while heating SnS-CuS layers, evidenced in XRF and grazing incidence angle XRD studies. Heating of SnS-CuS films results in the formation of SnS-Cu x SnS y . 'All-chemically deposited photovoltaic structures' involving these materials are presented

  8. Chemical vapor deposition of refractory metals and ceramics III

    International Nuclear Information System (INIS)

    Gallois, B.M.; Lee, W.Y.; Pickering, M.A.

    1995-01-01

    The papers contained in this volume were originally presented at Symposium K on Chemical Vapor Deposition of Refractory Metals and Ceramics III, held at the Fall Meeting of the Materials Research Society in Boston, Massachusetts, on November 28--30, 1994. This symposium was sponsored by Morton International Inc., Advanced Materials, and by The Department of Energy-Oak Ridge National Laboratory. The purpose of this symposium was to exchange scientific information on the chemical vapor deposition (CVD) of metallic and ceramic materials. CVD technology is receiving much interest in the scientific community, in particular, to synthesize new materials with tailored chemical composition and physical properties that offer multiple functionality. Multiphase or multilayered films, functionally graded materials (FGMs), ''smart'' material structures and nanocomposites are some examples of new classes of materials being produced via CVD. As rapid progress is being made in many interdisciplinary research areas, this symposium is intended to provide a forum for reporting new scientific results and addressing technological issues relevant to CVD materials and processes. Thirty four papers have been processed separately for inclusion on the data base

  9. Synthesis of mullite coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  10. Bath parameter dependence of chemically deposited Copper Selenide thin film

    International Nuclear Information System (INIS)

    Al-Mamun; Islam, A.B.M.O.

    2004-09-01

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation Of Cu 2-x Se thin films on to glass substrate. Different thin fms (0.2-0.6/μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that completing the Cu 2+ ions with EA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu 2-x Se. (author)

  11. Kinetics of chemical vapor deposition of boron on molybdenum

    International Nuclear Information System (INIS)

    Tanaka, H.; Nakanishi, N.; Kato, E.

    1987-01-01

    Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The experiments were conducted at atmospheric pressure. The weight change of the sample was noted by means of a thermobalance. Molybdenum was used as the substrate. It has been found that the outer layer of the deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB, and in the stational state of the reaction, the diffusion in the solid state is considered not to be rate controlling. When mass transport limitation was absent, the reaction orders with respect to boron trichloride and hydrogen were one third and one half, respectively. By comparing these orders with those obtained from Langmuir-Hinshelwood type equations, the rate controlling mechanism is identified to be the desorption of hydrogen chloride from the substrate

  12. Optimization of chemical displacement deposition of copper on porous silicon.

    Science.gov (United States)

    Bandarenka, Hanna; Redko, Sergey; Nenzi, Paolo; Balucani, Marco; Bondarenko, Vitaly

    2012-11-01

    Copper (II) sulfate was used as a source of copper to achieve uniform distribution of Cu particles deposited on porous silicon. Layers of the porous silicon were formed by electrochemical anodization of Si wafers in a mixture of HF, C3H7OH and deionized water. The well-known chemical displacement technique was modified to grow the copper particles of specific sizes. SEM and XRD analysis revealed that the outer surface of the porous silicon was covered with copper particles of the crystal orientation inherited from the planes of porous silicon skeleton. The copper crystals were found to have the cubic face centering elementary cell. In addition, the traces of Cu2O cubic primitive crystalline phases were identified. The dimensions of Cu particles were determined by the Feret's analysis of the SEM images. The sizes of the particles varied widely from a few to hundreds of nanometers. A phenomenological model of copper deposition was proposed.

  13. New luminescence lines in nanodiamonds obtained by chemical vapor deposition

    Science.gov (United States)

    Golubev, V. G.; Grudinkin, S. A.; Davydov, V. Yu.; Smirnov, A. N.; Feoktistov, N. A.

    2017-12-01

    The spectral characteristics of the photoluminescence lines detected for nanodiamonds obtained by the reactive ion etching of diamond particles in oxygen plasma, deposited by chemical vapor deposition on a silicon substrate, are studied. At room temperature, narrow lines are observed in the visible and infrared spectral regions, with a full width at half-maximum in the range of 1-2 nm at an almost complete absence of a broadband photoluminescence background signal. At decreasing temperature, the lines narrowed to 0.2-0.6 nm at T = 79 K, and the minimum line width was 0.055 nm at T = 10 K. With increasing temperature, the narrow lines shifted to the long-wavelength region of the spectrum, and their intensity decreased.

  14. Handbook of chemical vapor deposition principles, technology and applications

    CERN Document Server

    Pierson, Hugh O

    1999-01-01

    Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

  15. MEDUSA: The ExoMars experiment for in-situ monitoring of dust and water vapour

    Science.gov (United States)

    Colangeli, L.; Lopez-Moreno, J. J.; Nørnberg, P.; Della Corte, V.; Esposito, F.; Mazzotta Epifani, E.; Merrison, J.; Molfese, C.; Palumbo, P.; Rodriguez-Gomez, J. F.; Rotundi, A.; Visconti, G.; Zarnecki, J. C.; The International Medusa Team

    2009-07-01

    Dust and water vapour are fundamental components of the Martian atmosphere. In view of tracing the past environmental conditions on Mars, that possibly favoured the appearing of life forms, it is important to study the present climate and its evolution. Here dust and water vapour have (and have had) strong influence. Of major scientific interest is the quantity and physical, chemical and electrical properties of dust and the abundance of water vapour dispersed in the atmosphere and their exchange with the surface. Moreover, in view of the exploration of the planet with automated systems and in the future by manned missions, it is of primary importance to analyse the hazards linked to these environmental factors. The Martian Environmental Dust Systematic Analyser (MEDUSA) experiment, included in the scientific payload of the ESA ExoMars mission, accommodates a complement of sensors, based on optical detection and cumulative mass deposition, that aims to study dust and water vapour in the lower Martian atmosphere. The goals are to study, for the first time, in-situ and quantitatively, physical properties of the airborne dust, including the cumulative dust mass flux, the dust deposition rate, the physical and electrification properties, the size distribution of sampled particles and the atmospheric water vapour abundance versus time.

  16. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kumar, A.; Voevodin, A.A.; Paul, R.; Altfeder, I.; Zemlyanov, D.; Zakharov, D.N.; Fisher, T.S.

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface

  17. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A., E-mail: kumar50@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, A.A. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Paul, R. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Altfeder, I. [Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Zemlyanov, D.; Zakharov, D.N. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Fisher, T.S., E-mail: tsfisher@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface.

  18. ZnS nanoflakes deposition by modified chemical method

    International Nuclear Information System (INIS)

    Desai, Mangesh A.; Sartale, S. D.

    2014-01-01

    We report deposition of zinc sulfide nanoflakes on glass substrates by modified chemical method. The modified chemical method involves adsorption of zinc–thiourea complex on the substrate and its dissociation in presence of hydroxide ions to release sulfur ions from thiourea which react with zinc ions present in the complex to form zinc sulfide nanoflakes at room temperature. Influence of zinc salt and thiourea concentrations ratios on the morphology of the films was investigated by scanning electron microscope (SEM). The ratio of zinc and thiourea in the zinc–thiourea complex significantly affect the size of the zinc sulfide nanoflakes, especially width and density of the nanoflakes. The X-ray diffraction analysis exhibits polycrystalline nature of the zinc sulfide nanoflakes with hexagonal phase

  19. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  20. Comparative study of tantalum deposition by chemical vapor deposition and electron beam vacuum evaporation

    International Nuclear Information System (INIS)

    Spitz, J.; Chevallier, J.

    1975-01-01

    The coating by tantalum of steel parts has been carried out by the two following methods: chemical vapor deposition by hydrogen reduction of TaCl 5 (temperature=1100 deg C, pressure=200 mmHg, H 2 /TaCl 5 =10); electron beam vacuum evaporation. In this case Ta was firstly condensed by ion plating (P(Ar)=5x10 -3 up to 2x10 -2 mmHg; U(c)=3 to -4kV and J(c)=0.2 to 1mAcm -2 ) in order to ensure a good adhesion between deposit and substrate; then by vacuum condensation (substrate temperature: 300 to 650 deg C) to ensure that the coating is impervious to HCl an H 2 SO 4 acids. The advantages and inconveniences of each method are discussed [fr

  1. Pengaruh Temperatur, Massa Zink, Substrat Dan Waktu Tahan Terhadap Struktur Dan Morfologi Zno Hasil Sintesis Dengan Metode Chemical Vapour Transport (CVT

    Directory of Open Access Journals (Sweden)

    Arisela Distyawan

    2013-09-01

    Full Text Available Normal 0 false false false MicrosoftInternetExplorer4 Material Zink Oksida (ZnO telah berhasil disintesis menggunakan metode Chemical Vapour Transport dengan bahan dasar prekursor berupa serbuk Zn yang dipanaskan hingga mencapai temperatur uap dalam furnace horisontal. Adapun variasi yang diberikan dalam penelitian adalah berupa temperatur pemanasan (850, 900, dan 950oC, massa prekursor Zn (0,15, 0,25, dan 0,35g, lama waktu sputtering substrat (90 dan 180 detik, dan waktu tahan khusus untuk mengetahui initial growth ZnO (10, 20, 30, 40, 50, dan 60 menit. Pembentukan Zink Oksida (ZnO dikonfirmasi melalui data X-RD, dimana telah terbentuk material ZnO dengan struktur hexagonal wurtzite. Berdarsarkan data XRD juga diketahui ukuran kristal pada sampel sputtering 90 detik mengalami penurunan bersamaan penambahan massa Zn. Dari hasil pengamatan SEM didapatkan bahwa morfologi permukaan lapisan tipis ZnO terdiri dari berbagai macam bentuk berupa nanoparticle, nanowires, nanorods, dan nanotetrapod. Lapisan Zno paling tebal sebesar ±350 nm pada sampel 950oC-0,15g sputter 90 detik. Semakin tinggi temperatur operasi berdampak peningkatan ukuran partikel. Pengujian FTIR turut menguatkan terbentuknya lapisan tipis di permukaan substrat Alumina. Hal ini didasarkan terjadinya penyerapan vibrasi yang membentuk lekukan pada kisaran area 509 cm-1 dari masing-masing sampel.

  2. Origin of the near-band-edge photoluminescence in ZnO nanorods realised by vapour phase epitaxy and aqueous chemical growth

    Energy Technology Data Exchange (ETDEWEB)

    Bekeny, C.; Hilker, B.; Wischmeier, L.; Voss, T. [IFP, University of Bremen, P.O Box 330440, 28334 Bremen (Germany); Postels, B.; Mofor, A.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, P.O Box 3329, 38023 Braunschweig (Germany)

    2007-07-01

    Well established high temperature growth techniques like the vapourliquid-solid (VLS: 1100 C) and vapour-phase-epitaxy (VPE: 800 C) have been successfully optimized while the low-temperature aqueous chemical growth (ACG: 90 C) is being extended to yield large-scale high quality ZnO nanorods. Here, a detailed and systematic photoluminescence (PL) study is presented to understand the microscopic processes responsible for the near-band-edge (NBE) emission in nanorods obtained from these processes. For the ACG samples, the as-grown nanorods show relatively broad NBE emission (15 meV) attributed to the presence of large donor densities. After annealing in various atmospheres at {proportional_to}800 C, a significant reduction of the linewidth ({proportional_to}4 meV) and even the appearance of relatively sharp excitonic transitions is explained by the drastic reduction of the donor density. In contrast, the as-grown VPE and VLS samples exhibit well-resolved and sharp peaks resulting from exciton-related transitions. There is a shift in the room-temperature PL peak for VLS and VPE samples and is shown to result from contributions of the free exciton peak, its first and second order phonon replicas and not due to quantum confinement and or laser heating as assumed in literature.

  3. NASA evaluation of Type 2 chemical depositions. [effects of deicer deposition on aircraft tire friction performance

    Science.gov (United States)

    Yager, Thomas J.; Stubbs, Sandy M.; Howell, W. Edward; Webb, Granville L.

    1993-01-01

    Recent findings from NASA Langley tests to define effects of aircraft Type 2 chemical deicer depositions on aircraft tire friction performance are summarized. The Aircraft Landing Dynamics Facility (ALDF) is described together with the scope of the tire cornering and braking friction tests conducted up to 160 knots ground speed. Some lower speed 32 - 96 km/hr (20 - 60 mph) test run data obtained using an Instrumented Tire Test Vehicle (ITTV) to determine effects of tire bearing pressure and transverse grooving on cornering friction performance are also discussed. Recommendations are made concerning which parameters should be evaluated in future testing.

  4. Deposition of controllable preferred orientation silicon films on glass by inductively coupled plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Junshuai; Wang Jinxiao; Yin Min; Gao Pingqi; He Deyan; Chen Qiang; Li Yali; Shirai, Hajime

    2008-01-01

    An inductively coupled plasma (ICP) system with the adjustable distance between the inductance coil and substrates was designed to effectively utilize the spatial confinement of ICP discharge, and then control the gas-phase transport process. The effects of the gas phase processes on the crystallinity and preferred orientation of silicon films deposited on glass were systematically investigated. The investigation was conducted in the ICP-chemical vapor deposition process with the precursor gas of a SiH 4 /H 2 mixture at a substrate temperature of 350 deg. Highly crystallized silicon films with different preferred orientations, (111) or (220), could be selectively deposited by adjusting the SiH 4 dilution ratio [R=[SiH 4 ]/([SiH 4 ]+[H 2 ])] or total working pressure. When the total working pressure is 20 Pa, the crystallinity of the silicon films increases with the increase of the SiH 4 dilution ratio, while the preferred orientation was changed from (111) to (220). In the case of the fixed SiH 4 dilution (10%), the silicon film with I (220) /I (111) of about 3.5 and Raman crystalline fraction of about 89.6% has been deposited at 29.7 nm/min when the total working pressure was increased to 40 Pa. At the fixed SiH 4 partial pressure of 2 Pa, the film crystallinity decreases and the preferred orientation is always (111) with increasing the H 2 partial pressure from 18 to 58 Pa. Atomic force microscope reveals that the film deposited at a relatively high H 2 partial pressure has a very rough surface caused by the devastating etching of H atoms to the silicon network

  5. Chemically deposited tungsten fibre-reinforced tungsten – The way to a mock-up for divertor applications

    Directory of Open Access Journals (Sweden)

    J. Riesch

    2016-12-01

    Full Text Available The development of advanced materials is essential for sophisticated energy systems like a future fusion reactor. Tungsten fibre-reinforced tungsten composites (Wf/W utilize extrinsic toughening mechanisms and therefore overcome the intrinsic brittleness of tungsten at low temperature and its sensitivity to operational embrittlement. This material has been successfully produced and tested during the last years and the focus is now put on the technological realisation for the use in plasma facing components of fusion devices. In this contribution, we present a way to utilize Wf/W composites for divertor applications by a fabrication route based on the chemical vapour deposition (CVD of tungsten. Mock-ups based on the ITER typical design can be realized by the implementation of Wf/W tiles. A concept based on a layered deposition approach allows the production of such tiles in the required geometry. One fibre layer after the other is positioned and ingrown into the W-matrix until the final sample size is reached. Charpy impact tests on these samples showed an increased fracture energy mainly due to the ductile deformation of the tungsten fibres. The use of Wf/W could broaden the operation temperature window of tungsten significantly and mitigate problems of deep cracking occurring typically in cyclic high heat flux loading. Textile techniques are utilized to optimise the tungsten wire positioning and process speed of preform production. A new device dedicated to the chemical deposition of W enhances significantly, the available machine time for processing and optimisation. Modelling shows that good deposition results are achievable by the use of a convectional flow and a directed temperature profile in an infiltration process.

  6. Vapour trap development and operational experience

    International Nuclear Information System (INIS)

    Jansing, W.; Kirchner, G.; Menck, J.

    1977-01-01

    Sodium aerosols have the unpleasant characteristic that they deposit at places with low temperature level. This effect can be utilized when sodium aerosols are to be trapped at places which are determined beforehand. Thus vapour traps were developed which can filter sodium vapour from the cover gas. By this means the necessity was eliminated to heat all gas lines and gas systems with trace heaters just as all sodium lines are heated. It was of special interest for the INTERATOM to develop vapour traps which must not be changed or cleaned after a certain limited operating period. The vapour traps were supposed to enable maintenance free operation, i.e. they were to operate 'self cleaning'

  7. Microstructure Evolution of Electron Beam Physical Vapour Deposited Ni-23.5Cr-2.66Co-1.44Al Superalloy Sheet During Annealing at 600 °C

    Directory of Open Access Journals (Sweden)

    Li Mingwei

    2013-02-01

    Full Text Available Microstructure evolution of electron beam physical vapour deposited (EB-PVD Ni‑23.5Cr‑2.66Co‑1.44Al superalloy sheet during annealing at 600 °C was investigated. The results showed that the as-deposited alloy was composed of only g phase. After annealing at 600 °C, the locations of diffraction peaks were still the same. The (220 diffraction peak of the deposition side increased with annealing time. The sheet on deposited side had a tendency toward forming (220 texture during post-annealing. No obvious texture was observed at as-deposited and annealed sheet at 600 °C in substrate side. The count and size of "voids" decreased with time. The size of grains increased obviously with annealing time. The ultimate tensile strength of EB-PVD Ni-23.5Cr-2.66Co-1.44Al alloy sheet increased from 641 MPa to 829 MPa after annealing at 600 °C for 30 hours.

  8. Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

    International Nuclear Information System (INIS)

    Rodriguez-Lazcano, Y.; Pena, Yolanda; Nair, M.T.S.; Nair, P.K.

    2005-01-01

    We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb 2 Se 3 . Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10 -8 (Ω cm) -1 and photoconductivity, about 10 -6 (Ω cm) -1 under tungsten halogen lamp illumination with intensity of 700 W m -2 . An estimate for the mobility life time product for the film is 4 x 10 -9 cm 2 V -1

  9. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    International Nuclear Information System (INIS)

    Shin Jinhong; Waheed, Abdul; Winkenwerder, Wyatt A.; Kim, Hyun-Woo; Agapiou, Kyriacos; Jones, Richard A.; Hwang, Gyeong S.; Ekerdt, John G.

    2007-01-01

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO 2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH 2 (PMe 3 ) 4 (Me = CH 3 ) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase

  10. Chemical vapor deposition of TiB2 on graphite

    International Nuclear Information System (INIS)

    Pierson, H.O.; Randich, E.; Mattox, D.M.

    1978-01-01

    This study is an experimental investigation of the coating of graphite with TiB 2 by chemical vapor deposition (CVD) using the hydrogen reduction of BCl 3 and TiCl 4 at 925 0 C and 1 atm. Reasonable matching of the thermal expansion of TiB 2 and graphite was necessary to eliminate cracking. A suitable graphite was POCO DFP-1. Adhesion was improved by having a slightly rough graphite surface. Heat treatment at 2000 0 C and above resulted in a certain degree of diffusion. No melting or solid phases other than TiB 2 and graphite were detected up to 2400 0 C. The coatings showed no failure when repeatedly submitted to an electron beam pulse of 2 KW/cm 2 for 0.8 sec

  11. Anisotropic Friction of Wrinkled Graphene Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Long, Fei; Yasaei, Poya; Yao, Wentao; Salehi-Khojin, Amin; Shahbazian-Yassar, Reza

    2017-06-21

    Wrinkle structures are commonly seen on graphene grown by the chemical vapor deposition (CVD) method due to the different thermal expansion coefficient between graphene and its substrate. Despite the intensive investigations focusing on the electrical properties, the nanotribological properties of wrinkles and the influence of wrinkle structures on the wrinkle-free graphene remain less understood. Here, we report the observation of anisotropic nanoscale frictional characteristics depending on the orientation of wrinkles in CVD-grown graphene. Using friction force microscopy, we found that the coefficient of friction perpendicular to the wrinkle direction was ∼194% compare to that of the parallel direction. Our systematic investigation shows that the ripples and "puckering" mechanism, which dominates the friction of exfoliated graphene, plays even a more significant role in the friction of wrinkled graphene grown by CVD. The anisotropic friction of wrinkled graphene suggests a new way to tune the graphene friction property by nano/microstructure engineering such as introducing wrinkles.

  12. Thermoluminescence of Zn O thin films deposited by chemical bath

    International Nuclear Information System (INIS)

    Camacho A, M. C.; Cruz V, C.; Bernal H, R.; Berman M, D.; Castano M, V. M.

    2015-10-01

    Full text: Zn O films on Si were synthesized using a deposition method by chemical bath and thermally treated at 900 degrees C for 12 h in air. The morphological characterization by scanning electron microscopy reveals that uniform films were obtained. To investigate the thermoluminescent properties of the films were exposed to irradiation with beta particles with doses in the range from 0.5 to 128 Gy. The brightness curves obtained using a heating rate of 5 degrees C have two peaks, one at 124 and another at 270 degrees C, and a linear dependence of the integrated thermoluminescence as a function of dose. The second maximum reveals the existence of localized trapping states of potential utility in thermoluminescent dosimetry. (Author)

  13. Chemically vapor deposited coatings for multibarrier containment of nuclear wastes

    International Nuclear Information System (INIS)

    Rusin, J.M.; Shade, J.W.; Kidd, R.W.; Browning, M.F.

    1981-01-01

    Chemical vapor deposition (CVD) was selected as a feasible method to coat ceramic cores, since the technology has previously been demonstrated for high-temperature gas-cooled reactor (HTGR) fuel particles. CVD coatings, including SiC, PyC (pyrolytic carbon), SiO 2 , and Al 2 O 3 were studied. This paper will discuss the development and characterization of PyC and Al 2 O 3 CVD coatings on supercalcine cores. Coatings were applied to 2 mm particles in either fluidized or vibrating beds. The PyC coating was deposited in a fluidized bed with ZrO 2 diluent from C 2 H 2 at temperatures between 1100 and 1200 0 C. The Al 2 O 3 coatings were deposited in a vibrated bed by a two-stage process to minimize loss of PyC during the overcoating operation. This process involved applying 10 μm of Al 2 O 3 using water vapor hydrolysis of AlCl 3 and then switching to the more surface-controlled hydrolysis via the H 2 + CO 2 reaction (3CO 2 + 3H 2 + 2AlCl 3 = Al 2 O 3 + 6HCl + 3CO). Typically, 50 to 80 μm Al 2 O 3 coatings were applied over 30 to 40 μm PyC coatings. The coatings were evaluated by metallographic examination, PyC oxidation tests, and leach resistance. After air oxidation for 100 hours at 750 0 C, the duplex PyC/Al 2 O 3 coated particles exhibited a weight loss of 0.01 percent. Leach resistance is being determined for temperatures from 50 to 150 0 C in various solutions. Typical results are given for selected ions. The leach resistance of supercalcine cores is significantly improved by the application of PyC and/or Al 2 O 3 coatings

  14. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  15. Chemical vapor deposition of yttria stabilized zirconia in porous substrates

    International Nuclear Information System (INIS)

    Carolan, M.F.; Michaels, J.N.

    1987-01-01

    Electrochemical vapor deposition (EVD) of yttria stabilized zirconia (YSZ) is the preferred route to the production of thin films of YSZ on porous substrates. This process has been used in the construction of both fuel cells and steam electrolyzers. A critical aspect of the EVD process is an initial chemical vapor deposition phase in which the pores of a porous substrate are plugged by YSZ. In this process, water vapor and a mixture of gaseous zirconium chloride and yttrium chloride diffuse into the porous substrate from opposite sides and react to form YSZ and HCl ga. During the second stage of the process a continuous dense film of electrolyte is formed by a tarnishing-type process. Experimentally it is observed that the pores plug within a few pore diameters of the metal chloride face of the substrate. A kinetic rate expression that is first order in metal chloride but zero order in water is best able to explain this phenomenon. With this rate expression, the pores always plug near the metal chloride face. The model predicts less pore narrowing to occur as the ratio of the reaction rate to the diffusion rate of the metal chloride is increased. A kinetic rate expression that is first order in both water and metal chloride predicts that the pores plug much deeper in the substrate

  16. The Liquid Vapour Interface

    DEFF Research Database (Denmark)

    Als-Nielsen, Jens Aage

    1985-01-01

    In this short review we are concerned with the density variation across the liquid-vapour interface, i.e. from the bulk density of the liquid to the essentially zero density of the vapour phase. This density variation can in principle be determined from the deviation of the reflectivity from...

  17. Chemical vapour deposition diamond. Charge carrier movement at low temperatures and use in time-critical applications

    International Nuclear Information System (INIS)

    Jansen, Hendrik

    2013-09-01

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, over laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  18. Use of calcination in exposing the entrapped Fe particles from multi-walled carbon nanotubes grown by chemical vapour deposition

    CSIR Research Space (South Africa)

    Kesavan Pillai, Sreejarani

    2009-03-01

    Full Text Available behaviour of the as-prepared and calcined samples was investigated by thermogravimetric analysis. Calcination in air, at 400°C for 1 h, was found to be an efficient and simple method to extract metallic impurities from the amorphous carbon shells...

  19. Barium dipivaloylmethanate as the basic compound for the preparation of high temperature superconductivity films by the chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Drozdov, A. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Kuzmina, N. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Troyanov, S. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Martynenko, L. (Dept. of Chemistry, Moscow State Univ. (Russian Federation))

    1993-03-15

    Three different methods for barium bipivaloylmethanate (Ba(thd)[sub 2]) synthesis are compared. The adducts of Ba(thd)[sub 2] with different O- and N-donor ligands have been investigated. It is shown that the presence of additional ligands in these compounds improves the storage stability of Ba(thd)[sub 2]. (orig.)

  20. Large scale synthesis of α-Si3N4 nanowires through a kinetically favored chemical vapour deposition process

    Science.gov (United States)

    Liu, Haitao; Huang, Zhaohui; Zhang, Xiaoguang; Fang, Minghao; Liu, Yan-gai; Wu, Xiaowen; Min, Xin

    2018-01-01

    Understanding the kinetic barrier and driving force for crystal nucleation and growth is decisive for the synthesis of nanowires with controllable yield and morphology. In this research, we developed an effective reaction system to synthesize very large scale α-Si3N4 nanowires (hundreds of milligrams) and carried out a comparative study to characterize the kinetic influence of gas precursor supersaturation and liquid metal catalyst. The phase composition, morphology, microstructure and photoluminescence properties of the as-synthesized products were characterized by X-ray diffraction, fourier-transform infrared spectroscopy, field emission scanning electron microscopy, transmission electron microscopy and room temperature photoluminescence measurement. The yield of the products not only relates to the reaction temperature (thermodynamic condition) but also to the distribution of gas precursors (kinetic condition). As revealed in this research, by controlling the gas diffusion process, the yield of the nanowire products could be greatly improved. The experimental results indicate that the supersaturation is the dominant factor in the as-designed system rather than the catalyst. With excellent non-flammability and high thermal stability, the large scale α-Si3N4 products would have potential applications to the improvement of strength of high temperature ceramic composites. The photoluminescence spectrum of the α-Si3N4 shows a blue shift which could be valued for future applications in blue-green emitting devices. There is no doubt that the large scale products are the base of these applications.

  1. InxGa1−xN fibres grown on Au/SiO2 by chemical vapour deposition

    Indian Academy of Sciences (India)

    As a novelty, the use of a Ga–In metallic alloy to improve the indium incorporation in the InxGa1−xN is proposed. The results of high quality InxGa1−xN films with a thickness of three ..... and Universidad de Sonora for the technical facilities pro-.

  2. InxGa1− xN fibres grown on Au/SiO2 by chemical vapour deposition

    Indian Academy of Sciences (India)

    A morphological comparison between the InGa1−N and GaN films is shown as a function of the indium incorporation. The highest crystalline InGa1−N films structure was obtained with an indium composition of = 0.20. Also, the preferential growth on the (002) plane over In0.2Ga0.8N was observed by means of ...

  3. Chemical Vapour Deposition Diamond - Charge Carrier Movement at Low Temperatures and Use in Time-Critical Applications

    CERN Document Server

    Jansen, Hendrik; Pernegger, Heinz

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, to laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  4. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  5. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films

  6. Hydrogen production by ethanol partial oxidation over nano-iron oxide catalysts produced by chemical vapour synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Wael Ahmed Abou Taleb Sayed

    2011-01-13

    This work presents the experimental results of the synthesis of unsupported and supported SiC iron oxide nanoparticles and their catalytic activity towards ethanol partial oxidation. For comparison, further unsupported iron oxide phases were investigated towards the ethanol partial oxidation. These {gamma}-Fe{sub 2}O{sub 3} and {alpha}/{gamma}-Fe{sub 2}O{sub 3} phase catalysts were prepared by the CVS method using Fe(CO){sub 5} as precursor, supplied by another author. The {alpha}-Fe{sub 2}O{sub 3} and SiC nanoparticles were prepared by the CVS method using a home made hot wall reactor technique at atmospheric pressure. Ferrocene and tetramethylsilane were used as precursor for the production process. Process parameters of precursor evaporation temperature, precursor concentration, gas mixture velocity and gas mixture dilution were investigated and optimised to produce particle sizes in a range of 10 nm. For Fe{sub 2}O{sub 3}/SiC catalyst series production, a new hot wall reactor setup was used. The particles were produced by simultaneous thermal decomposition of ferrocene and tetramethylsilane in one reactor from both sides. The production parameters of inlet tube distance inside the reactor, precursor evaporation temperature and carrier gas flow were investigated to produce a series of samples with different iron oxide content. The prepared catalysts composition, physical and chemical properties were characterized by XRD, EDX, SEM, BET surface area, FTIR, XPS and dynamic light scattering (DLS) techniques. The catalytic activity for the ethanol gas-phase oxidation was investigated in a temperature range from 260 C to 290 C. The product distributions obtained over all catalysts were analysed with mass spectrometry analysis tool. The activity of bulk Fe{sub 2}O{sub 3} and SiC nanoparticles was compared with prepared nano-iron oxide phase catalysts. The reaction parameters, such as reaction temperature and O{sub 2}/ethanol ratio were investigated. The catalysts

  7. Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    Gedelian, Cynthia A.; Rajanna, K.C.; Premerlani, Brian; Lu, Toh-Ming

    2014-01-01

    Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

  8. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  9. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  10. Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

    2008-04-30

    Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

  11. Deposition barium titanate (BaTiO3) doped lanthanum with chemical solution deposition

    International Nuclear Information System (INIS)

    Iriani, Y.; Nurhadi, N.; Jamaludin, A.

    2016-01-01

    Deposition of Barium Titanate (BaTiO 3 ) thin films used Chemical Solution Deposition (CSD) method and prepared with spin coater. BaTiO 3 is doped with lanthanum, 1%, 2%, and 3%. The thermal process use annealing temperature 900°C and holding time for 3 hours. The result of characterization with x-ray diffraction (XRD) equipment show that the addition of La 3+ doped on Barium Titanate caused the change of angle diffraction.The result of refine with GSAS software shows that lanthanum have been included in the structure of BaTiO 3 . Increasing mol dopant La 3+ cause lattice parameter and crystal volume become smaller. Characterization result using Scanning Electron Microscopy (SEM) equipment show that grain size (grain size) become smaller with increasing mole dopant (x) La 3+ . The result of characterization using Sawyer Tower methods show that all the samples (Barium Titanante and Barium Titanate doped lanthanum) are ferroelectric material. Increasing of mole dopant La 3+ cause smaller coercive field and remanent polarization increases. (paper)

  12. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  13. Tritium gas and tritiated water vapour behaviour in the environment from releases into the atmosphere from fusion reactors

    International Nuclear Information System (INIS)

    Velarde, Marta; Perlado, Manuel

    2001-01-01

    The diffusion of tritium from fusion reactors follows different ways according to the present chemical form, tritium gas or tritiated water vapour. The atmospheric conditions, speed and direction of the wind, rain intensity or stability class, are key factors in the dry and wet deposition. The obtained results demonstrate that the wet deposition is critical for the incorporation of the tritiated water vapour to the natural biological chain. However, the dry deposition is the factor that influences in the tritium gas form. The conversion of HT into HTO in the soil is rapid (1-7 days), and 20% of HT deposited in the soil is reemitted to the atmosphere in the form HTO, while the rest incorporates into the biological cycle. The rain factor accelerates the incorporation of tritium to the ground, the superficial waters and the underground waters

  14. Formation of amorphous metal alloys by chemical vapor deposition

    Science.gov (United States)

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  15. Chemical vapor deposition growth of two-dimensional heterojunctions

    Science.gov (United States)

    Cui, Yu; Li, Bo; Li, JingBo; Wei, ZhongMing

    2018-01-01

    The properties of two-dimensional (2D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2D layered materials, the lattice mismatch influences slightly on the growth of 2D heterojunctions, thus providing a flexible design strategy. 2D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition (CVD) method was recently developed and applied for the preparation of 2D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2D heterojunctions for future applications in integrated circuits.

  16. Mineralogical and chemical characteristics of marble of Bela Pola deposite

    International Nuclear Information System (INIS)

    Shijakova-Ivanova, Tena; Boev, Blazho; Panov, Zoran; Pavlov, Dejan

    2009-01-01

    This paper presents mineralogical characteristics of marbles from the Bela Pola deposit. We have made mineralogical-chemical analyses of marbles and associated minerals in them. The investigation was carried out at the Faculty of natural and technical sciences - Shtip. Marbles from Bela Pola are dolomite and dolomite-calcite types. Microscope investigations have shown that marbles from Bela Pola have granoblastic structure but at some places it can be found with porphyroblastic structures. Percentage on calcite and dolomite is: 94.08% dolomite, 6.25% is calcite in white marbles. On the other hand calcite is present with 93% in gray marbles. Except dolomite and calcite also appear the following accessoring minerals: quartz, fluorite, corundum and paragonite. In general, after summarizing all the facts, which have resulted from this research we could say that, the Bela Pola marbles are massive, compact and white with high quality. In accordance to all formerly mentioned features, this marbles can be classified in the commercial group of marbles suitable for external application or internal design

  17. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  18. Growth of graphene underlayers by chemical vapor deposition

    International Nuclear Information System (INIS)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

    2013-01-01

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth

  19. Intelligent process control of fiber chemical vapor deposition

    Science.gov (United States)

    Jones, John Gregory

    Chemical Vapor Deposition (CVD) is a widely used process for the application of thin films. In this case, CVD is being used to apply a thin film interface coating to single crystal monofilament sapphire (Alsb2Osb3) fibers for use in Ceramic Matrix Composites (CMC's). The hot-wall reactor operates at near atmospheric pressure which is maintained using a venturi pump system. Inert gas seals obviate the need for a sealed system. A liquid precursor delivery system has been implemented to provide precise stoichiometry control. Neural networks have been implemented to create real-time process description models trained using data generated based on a Navier-Stokes finite difference model of the process. Automation of the process to include full computer control and data logging capability is also presented. In situ sensors including a quadrupole mass spectrometer, thermocouples, laser scanner, and Raman spectrometer have been implemented to determine the gas phase reactants and coating quality. A fuzzy logic controller has been developed to regulate either the gas phase or the in situ temperature of the reactor using oxygen flow rate as an actuator. Scanning electron microscope (SEM) images of various samples are shown. A hierarchical control structure upon which the control structure is based is also presented.

  20. Chemical solution deposition of CaCu 3 Ti 4 O 12 thin film

    Indian Academy of Sciences (India)

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron ...

  1. Microstructure and chemical bonding of DLC films deposited on ACM rubber by PACVD

    NARCIS (Netherlands)

    Martinez-Martinez, D.; Schenkel, M.; Pei, Y.T.; Sánchez-López, J.C.; Hosson, J.Th.M. De

    2011-01-01

    The microstructure and chemical bonding of DLC films prepared by plasma assisted chemical vapor deposition on acrylic rubber (ACM) are studied in this paper. The temperature variation produced by the ion impingement during plasma cleaning and subsequent film deposition was used to modify the film

  2. Chemical bath deposited and dip coating deposited CuS thin films - Structure, Raman spectroscopy and surface study

    Science.gov (United States)

    Tailor, Jiten P.; Khimani, Ankurkumar J.; Chaki, Sunil H.

    2018-05-01

    The crystal structure, Raman spectroscopy and surface microtopography study on as-deposited CuS thin films were carried out. Thin films deposited by two techniques of solution growth were studied. The thin films used in the present study were deposited by chemical bath deposition (CBD) and dip coating deposition techniques. The X-ray diffraction (XRD) analysis of both the as-deposited thin films showed that both the films possess covellite phase of CuS and hexagonal unit cell structure. The determined lattice parameters of both the films are in agreement with the standard JCPDS as well as reported data. The crystallite size determined by Scherrer's equation and Hall-Williamsons relation using XRD data for both the as-deposited thin films showed that the respective values were in agreement with each other. The ambient Raman spectroscopy of both the as-deposited thin films showed major emission peaks at 474 cm-1 and a minor emmision peaks at 265 cm-1. The observed Raman peaks matched with the covellite phase of CuS. The atomic force microscopy of both the as-deposited thin films surfaces showed dip coating thin film to be less rough compared to CBD deposited thin film. All the obtained results are presented and deliberated in details.

  3. Ternary Ag-In-S polycrystalline films deposited using chemical bath deposition for photoelectrochemical applications

    International Nuclear Information System (INIS)

    Chang, Wen-Sheng; Wu, Ching-Chen; Jeng, Ming-Shan; Cheng, Kong-Wei; Huang, Chao-Ming; Lee, Tai-Chou

    2010-01-01

    This paper describes the preparation and characterization of ternary Ag-In-S thin films deposited on indium tin oxide (ITO)-coated glass substrates using chemical bath deposition (CBD). The composition of the thin films was varied by changing the concentration ratio of [Ag]/[In] in the precursor solutions. The crystal structure, optical properties, and surface morphology of the thin films were analyzed by grazing incidence X-ray diffraction (GIXRD), UV-vis spectroscopy, and field-emission scanning electron microscopy (FE-SEM). GIXRD results indicate that the samples consisted of AgInS 2 and/or AgIn 5 S 8 crystal phases, depending on the composition of the precursor solutions. The film thicknesses, electrical resistivity, flat band potentials, and band gaps of the samples were between 1.12 and 1.37 μm, 3.73 x 10 -3 and 4.98 x 10 4 Ω cm, -0.67 and -0.90 V vs. NHE, and 1.83 and 1.92 eV, respectively. The highest photocurrent density was observed in the sample with [Ag]/[In] = 4. A photocurrent density of 9.7 mA cm -2 was obtained with an applied potential of 0.25 V vs. SCE in the three-electrode system. The photoresponse experiments were conducted in 0.25 M K 2 SO 3 and 0.35 M Na 2 S aqueous electrolyte solutions under irradiation by a 300 W Xe light (100 mW cm -2 ). The results show that ternary Ag-In-S thin film electrodes have potential in water splitting applications.

  4. Ternary Ag-In-S polycrystalline films deposited using chemical bath deposition for photoelectrochemical applications

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Wen-Sheng [Energy and Environmental Laboratories, Industrial Technology Research Institute, 195 Sec. 4, Chung-Hsing Road, Hsin-Chu 310, Taiwan (China); Wu, Ching-Chen [Department of Chemical Engineering, National Chung Cheng University, 168 University Road, Min-Hsiung, Chia-Yi 621, Taiwan (China); Jeng, Ming-Shan [Energy and Environmental Laboratories, Industrial Technology Research Institute, 195 Sec. 4, Chung-Hsing Road, Hsin-Chu 310, Taiwan (China); Cheng, Kong-Wei [Department of Chemical and Materials Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China); Huang, Chao-Ming [Department of Environmental Engineering, Kun Shan University, 949 Da Wan Road, Yung-Kang City, Tainan Hsien 710, Taiwan (China); Lee, Tai-Chou, E-mail: chmtcl@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, 168 University Road, Min-Hsiung, Chia-Yi 621, Taiwan (China)

    2010-04-15

    This paper describes the preparation and characterization of ternary Ag-In-S thin films deposited on indium tin oxide (ITO)-coated glass substrates using chemical bath deposition (CBD). The composition of the thin films was varied by changing the concentration ratio of [Ag]/[In] in the precursor solutions. The crystal structure, optical properties, and surface morphology of the thin films were analyzed by grazing incidence X-ray diffraction (GIXRD), UV-vis spectroscopy, and field-emission scanning electron microscopy (FE-SEM). GIXRD results indicate that the samples consisted of AgInS{sub 2} and/or AgIn{sub 5}S{sub 8} crystal phases, depending on the composition of the precursor solutions. The film thicknesses, electrical resistivity, flat band potentials, and band gaps of the samples were between 1.12 and 1.37 {mu}m, 3.73 x 10{sup -3} and 4.98 x 10{sup 4} {Omega} cm, -0.67 and -0.90 V vs. NHE, and 1.83 and 1.92 eV, respectively. The highest photocurrent density was observed in the sample with [Ag]/[In] = 4. A photocurrent density of 9.7 mA cm{sup -2} was obtained with an applied potential of 0.25 V vs. SCE in the three-electrode system. The photoresponse experiments were conducted in 0.25 M K{sub 2}SO{sub 3} and 0.35 M Na{sub 2}S aqueous electrolyte solutions under irradiation by a 300 W Xe light (100 mW cm{sup -2}). The results show that ternary Ag-In-S thin film electrodes have potential in water splitting applications.

  5. STUDI BANDING PELAPISAN MATERIAL SKD11 DENGAN METODE PHYSICAL VAPOUR DEPOSITION DAN THERMAL DIFUSION PADA KOMPONEN INSERT DIES MESIN STAMPING PRESS

    Directory of Open Access Journals (Sweden)

    Robertus Suryo Bisono

    2017-02-01

    Full Text Available Telah dilakukan pelapisan menggunakan Titanium Alumunium Nitrid (TIAlN dengan metode PVD Coating (Physical Vapour Diposition dan TD (Thermal Difusion  untuk perlakuan permukaan baja perkakas SKD11 sebagai material Insert Die komponen mesin Stamping Press setelah perlakuan hardening. Perlakuan permukaan dimaksudkan untuk meningkatkan kualitas permukaan khususnya kekerasan dan perubahan struktur mikro yang terjadi. Untuk mengetahui tingkat keberhasilan dari perlakuan permukaan tersebut dilakukan dengan memvariasi waktu proses, masing masing 2 sample diproses pada 4 jam, 5 jam dan 6 jam dengan temperatur  proses masing-masing  400ᴼ C. Kemudian satu dari tiap variable sample tersebut di panaskan pada suhu 1000ᴼ C selama 1 jam, pendinginan dilalukan dengan udara bebas tanpa proses quenching Untuk mengetahui hasilnya dilakukan uji kekerasan mikro Vickers, pengamatan struktur mikro Scanning Eectron Microscope (SEM, dan pengujian komposisi dengan Energy Defersif Sepectroscopy (EDS untuk mengetahui tingkat penyerapan material terdifusi. Hasil menunjukan bahwa SKD11 yang dilapisi TiAlN dengan metode PVD selama 6 jam menghasilkan lapisan yang paling keras yaitu 1363 HV dengan ketebalan lapisan 5,3µm. Proses pemanasan 1000⁰C selama 1 jam pada sample mengakibatkan penurunan kekerasan sample dan lapisan permukaan sample menjadi lebih tebal hingga 50µm. Penambahan lapisan diakibatkan oleh terdifusinya atom atom yang menyusun lapisan TiAlN ke dalam substrat serta keluarnya atom atom penyusun lapisan hingga membentuk lapisan kompleks.

  6. Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

    Science.gov (United States)

    1995-01-01

    Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

  7. Single crystal diamond detectors grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Tuve, C.; Angelone, M.; Bellini, V.; Balducci, A.; Donato, M.G.; Faggio, G.; Marinelli, M.; Messina, G.; Milani, E.; Morgada, M.E.; Pillon, M.; Potenza, R.; Pucella, G.; Russo, G.; Santangelo, S.; Scoccia, M.; Sutera, C.; Tucciarone, A.; Verona-Rinati, G.

    2007-01-01

    The detection properties of heteropitaxial (polycrystalline, pCVD) and homoepitaxial (single crystal, scCVD) diamond films grown by microwave chemical vapor deposition (CVD) in the Laboratories of Roma 'Tor Vergata' University are reported. The pCVD diamond detectors were tested with α-particles from different sources and 12 C ions produced by 15MV Tandem accelerator at Southern National Laboratories (LNS) in Catania (Italy). pCVDs were also used to monitor 14MeV neutrons produced by the D-T plasma at Joint European Torus (JET), Culham, U.K. The limit of pCVDs is the poor energy resolution. To overcome this problem, we developed scCVD diamonds using the same reactor parameters that optimized pCVD diamonds. scCVD were grown on a low cost (100) HPHT single crystal substrate. A detector 110μm thick was tested under α-particles and under 14MeV neutron irradiation. The charge collection efficiency spectrum measured under irradiation with a triple α-particle source shows three clearly resolved peaks, with an energy resolution of about 1.1%. The measured spectra under neutron irradiation show a well separated C(n,α 0 ) 9 Be12 reaction peak with an energy spread of 0.5MeV for 14.8MeV neutrons and 0.3MeV for 14.1MeV neutrons, which are fully compatible with the energy spread of the incident neutron beams

  8. Preparation of hydrosol suspensions of elemental and core–shell nanoparticles by co-deposition with water vapour from the gas-phase in ultra-high vacuum conditions

    International Nuclear Information System (INIS)

    Binns, Chris; Prieto, Pilar; Baker, Stephen; Howes, Paul; Dondi, Ruggero; Burley, Glenn; Lari, Leonardo; Kröger, Roland; Pratt, Andrew; Aktas, Sitki; Mellon, John K.

    2012-01-01

    We report a new method to produce liquid suspensions of nanoparticles by co-deposition with water vapour from the gas-phase in ultra-high vacuum (UHV) conditions. The water is injected from outside the vacuum as a molecular beam onto a substrate maintained at 77 K and forms an ice layer with a UHV vapour pressure. Molecular dynamics simulations confirm that the nanoparticles are soft-landed close to the surface of the growing ice layer. We show that the un-agglomerated size distribution within the liquid is similar to the gas-phase size distribution and demonstrate that the inclusion of surfactants in the injected water prevents agglomeration. The method allows the flexibility and tight size control available with gas-phase production methods to be applied to making nanoparticle suspensions with any desired properties. This is important for practical applications, especially in medicine. We have extended the method to include core–shell nanoparticles, in which there is flexible control over the core size and shell thickness and free choice of the material in either. Here, we report the production of suspensions of Cu, Ag and Au elemental nanoparticles and Fe-Au and Fe-Fe-oxide core–shell nanoparticles with diameters in the range 5–15 nm. We demonstrate the power of the method in practical applications in the case of Fe-Fe-oxide nanoparticles, which have a specific absorption rate of an applied oscillating magnetic field that is significantly higher than available Fe-oxide nanoparticle suspensions and the highest yet reported. These will thus have a very high-performance in the treatment of tumours by magnetic nanoparticle hyperthermia.

  9. Luminescent thin films by the chemical aerosol deposition technology (CADT)

    NARCIS (Netherlands)

    Martin, F.J.; Martin, F.J.; Albers, H.; Lambeck, Paul; Popma, T.J.A.; van de Velde, G.M.H.

    1992-01-01

    Zinc sulphide thin films have been deposited with CART using zinc chlorideand zinc acetylacetonate as Zn compounds and thiourea and 1,1,3,3-tetramethylthiourea as S compounds soluted in methanol, ethanol, isopropanol and cellosolve. After optimalization of the deposition process homogeneous layers

  10. Estimating chemical composition of atmospheric deposition fluxes from mineral insoluble particles deposition collected in the western Mediterranean region

    Directory of Open Access Journals (Sweden)

    Y. Fu

    2017-11-01

    Full Text Available In order to measure the mass flux of atmospheric insoluble deposition and to constrain regional models of dust simulation, a network of automatic deposition collectors (CARAGA has been installed throughout the western Mediterranean Basin. Weekly samples of the insoluble fraction of total atmospheric deposition were collected concurrently on filters at five sites including four on western Mediterranean islands (Frioul and Corsica, France; Mallorca, Spain; and Lampedusa, Italy and one in the southern French Alps (Le Casset, and a weighing and ignition protocol was applied in order to quantify their mineral fraction. Atmospheric deposition is both a strong source of nutrients and metals for marine ecosystems in this area. However, there are few data on trace-metal deposition in the literature, since their deposition measurement is difficult to perform. In order to obtain more information from CARAGA atmospheric deposition samples, this study aimed to test their relevance in estimating elemental fluxes in addition to total mass fluxes. The elemental chemical analysis of ashed CARAGA filter samples was based on an acid digestion and an elemental analysis by inductively coupled plasma atomic emission spectroscopy (ICP-AES and mass spectrometry (MS in a clean room. The sampling and analytical protocols were tested to determine the elemental composition for mineral dust tracers (Al, Ca, K, Mg and Ti, nutrients (P and Fe and trace metals (Cd, Co, Cr, Cu, Mn, Ni, V and Zn from simulated wet deposition of dust analogues and traffic soot. The relative mass loss by dissolution in wet deposition was lower than 1 % for Al and Fe, and reached 13 % for P due to its larger solubility in water. For trace metals, this loss represented less than 3 % of the total mass concentration, except for Zn, Cu and Mn for which it could reach 10 %, especially in traffic soot. The chemical contamination during analysis was negligible for all the elements except for Cd

  11. Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

    Science.gov (United States)

    Fenwick, William Edward

    GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen

  12. Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p-i-n structure

    Energy Technology Data Exchange (ETDEWEB)

    Clayton, A.J., E-mail: andy.clayton@optictechnium.com [CSER, Glyndwr University, OpTIC Technium, St Asaph, LL17 0JD (United Kingdom); Irvine, S.J.C.; Barrioz, V.; Brooks, W.S.M. [CSER, Glyndwr University, OpTIC Technium, St Asaph, LL17 0JD (United Kingdom); Zoppi, G.; Forbes, I. [NPAC, Northumbria University, Newcastle upon Tyne, NE1 8ST (United Kingdom); Rogers, K.D.; Lane, D.W.; Hutchings, K.; Roncallo, S. [Centre for Material Science and Engineering, Cranfield University, Swindon, SN6 8LA (United Kingdom)

    2011-08-31

    Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeS{sub x} layer into a CdS/CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS{sub 2} after post growth sulphur (S) annealing of the FeS{sub x} layer between 400 deg. C and 500 deg. C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeS{sub x} layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeS{sub x} layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeS{sub x} interface due to S inter-diffusion during the annealing process.

  13. Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

    International Nuclear Information System (INIS)

    Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

    2008-01-01

    In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

  14. Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Yu-Kuang Liao

    2017-04-01

    Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

  15. Metallization on FDM Parts Using the Chemical Deposition Technique

    Directory of Open Access Journals (Sweden)

    Azhar Equbal

    2014-08-01

    Full Text Available Metallization of ABS (acrylonitrile-butadiene-styrene parts has been studied on flat part surfaces. These parts are fabricated on an FDM (fused deposition modeling machine using the layer-wise deposition principle using ABS as a part material. Electroless copper deposition on ABS parts was performed using two different surface preparation processes, namely ABS parts prepared using chromic acid for etching and ABS parts prepared using a solution mixture of sulphuric acid and hydrogen peroxide (H2SO4/H2O2 for etching. After surface preparations using these routes, copper (Cu is deposited electrolessly using four different acidic baths. The acidic baths used are 5 wt% CuSO4 (copper sulfate with 15 wt% of individual acids, namely HF (hydrofluoric acid, H2SO4 (sulphuric acid, H3PO4 (phosphoric acid and CH3COOH (acetic acid. Cu deposition under different acidic baths used for both the routes is presented and compared based on their electrical performance, scanning electron microscopy (SEM and energy dispersive X-ray spectrometry (EDS. The result shows that chromic acid etched samples show better electrical performance and Cu deposition in comparison to samples etched via H2SO4/H2O2.

  16. Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

    International Nuclear Information System (INIS)

    Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

    2006-01-01

    Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

  17. Laser chemical vapor deposition of millimeter scale three-dimensional shapes

    Science.gov (United States)

    Shaarawi, Mohammed Saad

    2001-07-01

    Laser chemical vapor deposition (LCVD) has been successfully developed as a technique to synthesize millimeter-scale components directly from the gas phase. Material deposition occurs when heat generated by the interaction of a laser beam with a substrate thermally decomposes the gas precursor. Selective illumination or scanning the laser beam over portions of a substrate forms the single thin layer of material that is the building block of this process. Sequential scanning of the laser in a pre-defined pattern on the substrate and subsequent deposit causes the layers to accumulate forming the three-dimensional shape. The primary challenge encountered in LCVD shape forming is the synthesis of uniform layers. Three deposition techniques are studied to address this problem. The most successful technique, Active Surface Deposition, is based on the premise that the most uniform deposits are created by measuring the deposition surface topology and actively varying the deposition rate in response to features at the deposition surface. Defects observed in the other techniques were significantly reduced or completely eliminated using Active Surface Deposition. The second technique, Constant Temperature Deposition, maintains deposit uniformity through the use of closed-loop modulation of the laser power to sustain a constant surface temperature during deposition. The technique was successful in depositing high quality graphite tubes >2 mm tall from an acetylene precursor and partially successful in depositing SiC + C composite tubes from tetramethylsilane (TMS). The final technique, Constant Power Deposition, is based on the premise that maintaining a uniform power output throughout deposition would result in the formation of uniform layers. Constant Power Deposition failed to form coherent shapes. Additionally, LCVD is studied using a combination of analytic and numerical models to gain insight into the deposition process. Thermodynamic modeling is used to predict the

  18. Manufacture of Bi-cuprate thin films on MgO single crystal substrates by chemical solution deposition

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Bertelsen, Christian Vinther; Andersen, Niels Hessel

    2014-01-01

    Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors dissolved in xylene. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c...

  19. Thermodynamic calculations for chemical vapor deposition of silicon carbide

    International Nuclear Information System (INIS)

    Minato, Kazuo; Fukuda, Kousaku; Ikawa, Katsuichi

    1985-03-01

    The composition of vapor and condensed phases at equilibrium and CVD phase diagrams were calculated for the CH 3 SiCl 3 -H 2 -Ar system using a computer code SOLGASMIX-PV, which is based on the free energy minimization method. These calculations showed that β-SiC, β-SiC+C(s), β-SiC+Si(s), β-SiC+Si(l), Si(s), Si(l), or C(s) would be deposited depending on deposition parameters. In the CH 3 SiCl 3 -Ar system, condensed phase was found to be β-SiC+C(s) or C(s). Comparing the calculated CVD phase diagrams with the experimental results from the literature, β-SiC+C(s) and β-SiC+Si(s) were deposited in the experiments at the high temperature (more than 2000K) and low temperature (less than 1700K) parts of a resion, respectively, where only β-SiC would be deposited in the calculations. These are remakable results to consider the deposition mechanism of silicon carbide. (author)

  20. Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    Science.gov (United States)

    Lackey, Jr., Walter J.; Caputo, Anthony J.

    1986-01-01

    A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  1. Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

    KAUST Repository

    Hussain, Aftab M.; Sevilla, Galo T.; Rader, Kelly; Hussain, Muhammad Mustafa

    2013-01-01

    electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace

  2. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

    2010-01-01

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

  3. Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's

    National Research Council Canada - National Science Library

    Sturm, James

    2001-01-01

    ... (such as microprocessors and memory chips) is based. This project examines the scaling of MOSFET's to very small channel dimensions using a vertical structure which is defined by Rapid Thermal Chemical Vapor Deposition...

  4. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    Science.gov (United States)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  5. Metal–organic covalent network chemical vapor deposition for gas separation

    NARCIS (Netherlands)

    Boscher, N.D.; Wang, M.; Perrotta, A.; Heinze, K.; Creatore, A.; Gleason, K.K.

    2016-01-01

    The chemical vapor deposition (CVD) polymerization of metalloporphyrin building units is demonstrated to provide an easily up-scalable one-step method toward the deposition of a new class of dense and defect-free metal–organic covalent network (MOCN) layers. The resulting hyper-thin and flexible

  6. Physical and chemical properties of deposited airborne particulates over the Arabian Red Sea coastal plain

    KAUST Repository

    Engelbrecht, Johann; Stenchikov, Georgiy L.; Prakash, P. Jish; Lersch, Traci; Anisimov, Anatolii; Shevchenko, Illia

    2017-01-01

    ) situated on the Red Sea coastal plain of Saudi Arabia and subjected to the same chemical and mineralogical analysis we conducted on soil samples. Frisbee deposition samplers with foam inserts were used to collect dust and other deposits, for the period

  7. Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

    NARCIS (Netherlands)

    Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

  8. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  9. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor depositionDeposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  10. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  11. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  12. A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

    International Nuclear Information System (INIS)

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

    2010-01-01

    This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  13. Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films

    International Nuclear Information System (INIS)

    Kassim, Anuar; Wee Tee, Tan; Soon Min, Ho.; Nagalingam, Saravanan

    2010-01-01

    Cu 4 SnS 4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer. X-ray diffraction patterns indicated that the films were polycrystalline with prominent peak attributed to (221) plane of orthorhombic crystal structure. The films prepared at 80 min showed significant increased in the intensity of all diffractions. According to AFM images, these films indicated that the surface of substrate was covered completely. The obtained films also produced higher absorption characteristics when compared to the films prepared at other deposition periods based on optical absorption studies. The band gap values of films deposited at different deposition periods were in the range of 1.6-2.1 eV. Deposition for 80 min was found to be the optimum condition to produce good quality thin films under the current conditions. (author).

  14. Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

    Science.gov (United States)

    Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

    2015-04-01

    Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings.

  15. Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

    International Nuclear Information System (INIS)

    Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

    2013-01-01

    Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

  16. Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina

    2016-01-01

    A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar....... According to the model, the predominant tantalum growth species is TaCl3. The temperature is shown to have a pronounced effect onthe morphology and rate of deposition of the tantalum and an apparent change in deposition mechanism occurs between 850–900 °C, resulting in the deposition rate at 900 °C being...

  17. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  18. PREPARATION AND CHARACTERIZATION OF IRON SULPHIDE THIN FILMS BY CHEMICAL BATH DEPOSITION METHOD

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-06-01

    Full Text Available FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films obtained under deposition parameters such as bath temperature (90 °C, deposition period (90 min, electrolyte concentration (0.15 M and pH of the reactive mixture (pH 2.5. The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. X-ray diffraction displayed a pattern consistent with the formation of an orthorhombic structure, with a strong (110 preferred orientation. Atomic force microscopy image showed the substrate surface is well covered with irregular grains. A direct band gap of 1.85 eV was obtained according to optical absorption studies.   Keywords: Iron sulfide, X-ray diffraction, chemical bath deposition, thin films

  19. A comparative chemical network study of HWCVD deposited amorphous silicon and carbon based alloys thin films

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Bibhu P., E-mail: bibhuprasad.swain@gmail.com [Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of Technology, Majitar, Rangpo Sikkim (India); Swain, Bhabani S.; Hwang, Nong M. [Thin Films and Microstructure Laboratory, Department of Materials Science and Engineering, Seoul National University, Seoul (Korea, Republic of)

    2014-03-05

    Highlights: • a-SiC:H, a-SiN:H, a-C:H and a-SiCN:H films were deposited by hot wire chemical vapor deposition. • Evolution of microstructure of a-SiCN:H films deposited at different NH{sub 3} flow rate were analyzed. • The chemical network of Si and C based alloys were studied by FTIR and Raman spectroscopy. -- Abstract: Silicon and carbon based alloys were deposited by hot wire chemical vapor deposition (HWCVD). The microstructure and chemical bonding of these films were characterized by field emission scanning electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The electron microscopy revealed various microstructures were observed for a-C:H, a-SiC:H, a-SiN:H, a-CN:H and a-SiCN:H films. The microstructure of SiN:H films showed agglomerate spherical grains while a-C:H films showed more fractal surface with branched microstructure. However, a-SiC:H, a-CN:H and a-SiCN:H indicated uniform but intermediate surface fractal microstructure. A series of a-SiCN:H films were deposited with variation of NH{sub 3} flow rate. The nitrogen incorporation in a-SiCN:H films alter the carbon network from sp{sup 2} to sp{sup 3} bonding The detail chemical bonding of amorphous films was analyzed by curve fitting method.

  20. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    International Nuclear Information System (INIS)

    Gonzalez, G.; Krishnan, B.; Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K.; Shaji, S.

    2011-01-01

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  1. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Pérez-García Claudia Elena

    2015-01-01

    Full Text Available To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition: SILAR (Successive Ionic Layer Adsorption and Reaction and PCBD (Photo Chemical Bath Deposition, all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap of PbS films can be monitored by deposition process due to porosity-induced quantum confinement which depends on the parameters of the process. We expect that the techniques employed can be successfully used for production of optoelectronic devices.

  2. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-08-31

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  3. An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

    International Nuclear Information System (INIS)

    Chu Juan; Jin Zhengguo; Cai Shu; Yang Jingxia; Hong Zhanglian

    2012-01-01

    Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV–Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm–19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.

  4. Ammonia-free chemical bath method for deposition of microcrystalline cadmium selenide films

    International Nuclear Information System (INIS)

    Lokhande, C.D.; Lee, Eun-Ho; Jung, Kwang-Deog; Joo, Oh-Shim

    2005-01-01

    Chemical deposition of cadmium selenide (CdSe) films has been carried out from alkaline aqueous solution containing Cd 2+ and Se 2- ions. In general, the alkaline pH of the CdSe deposition bath has been adjusted by addition of liquid ammonia. However, the use of ammonia in large-scale chemical deposition method represents an environmental problem due to its volatility and toxicity. The volatility of ammonia changes the pH of deposition bath and results into irreproducible film properties. In the present paper, ammonia-free and weak alkaline (pH < 9.0) chemical method for cadmium selenide film has been developed. The cadmium selenide films are microcrystalline (grain size 0.5-0.7 μm) with hexagonal crystal structure. These films are photoactive and therefore, useful in photo conversion of light into electrical power

  5. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    Science.gov (United States)

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  6. Industrialization of hot wire chemical vapor deposition for thin film applications

    NARCIS (Netherlands)

    Schropp, Ruud

    2015-01-01

    The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical

  7. Impact of acid atmospheric deposition on soils : quantification of chemical and hydrologic processes

    NARCIS (Netherlands)

    Grinsven, van J.J.M.

    1988-01-01

    Atmospheric deposition of SO x , NOx and NHx will cause major changes in the chemical composition of solutions in acid soils, which may affect the biological functions of the soil. This thesis deals with quantification of soil acidification by means of chemical

  8. Electrical characterization of low temperature deposited oxide films ...

    Indian Academy of Sciences (India)

    Unknown

    electronics on the same substrate (Water and Chu 2002). Plasma enhanced chemical vapour deposition (PECVD) .... sion in depletion region is due to the presence of inter- face traps. The total capacitance in inversion ... The conductance technique is used to deter- mine the interface state density throughout the depletion.

  9. Rapid mixing chemical oxidative polymerization: an easy route to ...

    Indian Academy of Sciences (India)

    Administrator

    (SDCNTs)/PANI nanofibres (NFs) has been prepared using an easy in situ rapid mixing chemical ... SDCNTs thin film was obtained using thermal chemical vapour deposition method in ... In the next step, 250 mL of aqueous HCl was taken in a.

  10. Evaluation of physical and chemical properties and their interactions in fat, oil, and grease (FOG) deposits.

    Science.gov (United States)

    Gross, Martin A; Jensen, Jeanette L; Gracz, Hanna S; Dancer, Jens; Keener, Kevin M

    2017-10-15

    Fat, oil and grease (FOG) blockages in sewer systems are a substantial problem in the United States. It has been estimated that over 50% of sewer overflows are a result of FOG blockages. In this work, a thorough laboratory study was undertaken to examine key variables that contribute to FOG deposit formation under controlled conditions. Physical and chemical properties and their interactions were evaluated and conditions that generated deposits that mimicked field FOG deposits were identified. It was found that 96 of the of 128 reaction conditions tested in the laboratory formed FOG deposits with similar physical and chemical characteristics as field FOG deposits. It was also found that FOG deposits can be created through fatty acid crystallization and not just saponification. Furthermore FOG deposits were found to be more complex than previously documented and contain free fatty acids, fatty acid metal salts, triacylglycerol's, diacylglycerol's and, monoacylglycerol's. Lastly it was found that FOG deposits that only contained saturated fatty acids were on average 2.1 times higher yield strength than deposits that contained unsaturated fatty acids. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Coating of ceramic powders by chemical vapor deposition techniques (CVD)

    International Nuclear Information System (INIS)

    Haubner, R.; Lux, B.

    1997-01-01

    New ceramic materials with selected advanced properties can be designed by coating of ceramic powders prior to sintering. By variation of the core and coating material a large number of various powders and ceramic materials can be produced. Powders which react with the binder phase during sintering can be coated with stable materials. Thermal expansion of the ceramic materials can be adjusted by varying the coating thickness (ratio core/layer). Electrical and wear resistant properties can be optimized for electrical contacts. A fluidized bed reactor will be designed which allow the deposition of various coatings on ceramic powders. (author)

  12. Detection of polar vapours

    International Nuclear Information System (INIS)

    Blyth, D.A.

    1980-01-01

    Apparatus for monitoring for polar vapours in a gas consists of (i) a body member defining a passage through which a continuous stream of the gas passes; (ii) an ionising source associated with a region of the passage such that ionization of the gas stream takes place substantially only within the region and also any polar vapour molecules present therein will react with the gas formed to generate ion clusters; and (iii) an electrode for collecting ions carried by the gas stream, the electrode being positioned in the passage downstream of the region and separated from the region by a sufficient distance to ensure that no substantial number of the gas ions formed in said region remains in the gas stream at the collector electrode whilst ensuring that a substantial proportion of the ion clusters formed in the region does remain in the gas stream at the collector electrode. (author)

  13. Chemical analysis of the Assale (Ethiopia) rock salt deposit | Binega ...

    African Journals Online (AJOL)

    contaminants) elements found in the Assale (Ethiopia) rock salt. The results showed that the rock salt is found to be the best natural common salt. This was proved by comparison with the chemical requirement and trace elements in common ...

  14. Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

    International Nuclear Information System (INIS)

    Zaghdoudi, M.; Abdelkrim, M.M.; Fathallah, M.; Mohammed-Brahim, T.; Rogel, R.

    2006-01-01

    The optical and electrical properties of amorphously deposited and then post-crystallized silicon films are studied as a function of the deposition pressure and the phosphorus doping. Amorphous silicon films are deposited in a high pressure regime by SAPCVD (Sub-Atmospheric Pressure Chemical Vapour Deposition) to study the effect of the deposition pressure. They are also deposited in a low pressure regime by LPCVD (Low Pressure Chemical Vapour Deposition) to study the effect of a low phosphorus doping. Both types of amorphous films are then crystallized in the solid phase at 600 deg. C. Using different optical and electrical characterization techniques, the beneficial effect of a high pressure as well as of a weak phosphorus doping on the decrease of the defect density is highlighted. These results give some ways to improve the quality of polysilicon enough to be used in photovoltaic or in thin film electronic devices

  15. Vapour pressure of trideuterioammonia

    Energy Technology Data Exchange (ETDEWEB)

    Calado, J.C.G.; Lopes, J.N.C.; Rebelo, L.P.N. (Instituto Superior Tecnico, Lisbon (Portugal). Centro de Quimica Estrutural)

    1992-09-01

    The H-to-D vapour-pressure isotope effect in liquid ammonia has been measured at 62 temperatures between 228 K and 260 K. The vapour pressures, corrected to 100 per cent nuclidic purity, have been fitted to the equation: T ln r = A+B/T+CT, where r is the vapour-pressure ratio p(NH[sub 3])/p(ND[sub 3]). The fit yielded the parameters: A = -8.22508 K, B = 12338.2 K[sup 2], and C = -0.05544. Comparisons with the results of other authors were made in order to clarify some discrepancies found in the literature. Our values are in accord with the previous results of King et al. and an extrapolation of the fitted equation down to the triple-point temperature gave good agreement with the published results. The fitted equation was used in conjunction with the Clapeyron equation to calculate the difference in the molar enthalpies of vaporization between NH[sub 3] and ND[sub 3]. At T = 230 K that difference is -846 J.mol[sup -1] decreasing to -747 J.mol[sup -1] at 260 K. (author).

  16. Characterization of photoluminescent europium doped yttrium oxide thin-films prepared by metallorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    McKittrick, J.; Bacalski, C.F.; Hirata, G.A.; Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M.

    1998-01-01

    Europium doped yttrium oxide, (Y 1-x Eu x ) 2 O 3 , thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y 2 O 3 , grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y 2 O 3 :Eu 3+ was observed in x-ray diffraction for deposition temperatures ≥600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra

  17. Chemical bath deposition of indium sulphide thin films: preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Ennaoui, A.; Patil, P.S.; Giersig, M.; Diesner, K.; Muller, M.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1999-02-26

    Indium sulphide (In{sub 2}S{sub 3}) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In{sub 2}S{sub 3} thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (element of phase). The optical band gap of In{sub 2}S{sub 3} thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. (orig.) 27 refs.

  18. Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Kim, Gwihyun; Park, Seran; Shin, Hyunsu; Song, Seungho; Oh, Hoon-Jung; Ko, Dae Hong; Choi, Jung-Il; Baik, Seung Jae

    2017-12-01

    Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent feature of AP PECVD. Two dimensional radial gas flows in AP PECVD induces radial variation of mass-transport and that of substrate temperature. The opposite trend of these variations would be the key consideration in the development of uniform deposition process. Another inherent feature of AP PECVD is confined plasma discharge, from which volume power density concept is derived as a key parameter for the control of deposition rate. We investigated deposition rate as a function of volume power density, gas flux, source gas partial pressure, hydrogen partial pressure, plasma source frequency, and substrate temperature; and derived a design guideline of deposition tool and process development in terms of deposition rate and uniformity.

  19. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  20. Chemical characterization of condensates from the Shatlyk deposit

    Energy Technology Data Exchange (ETDEWEB)

    Khankuliev, K.; Makarov, V.V.; Talalaev, E.I.

    1980-01-01

    Condensates from the deposits of Eastern and Western Shatlyk differ little in terms of fractional and group hydrocarbon composition. They are all comparatively light, boil away by 350/sup 0/, while the benzene part (60-200/sup 0/) amounts to 43-44% and the kerosene part (200-300/sup 0/), 39-42%. The basic part of the cyclic hydrocarbons (naphthene and aromatic) is concentrated in the light condensate fractions, which boil away by 150/sup 0/. The total content of the aromatic hydrocarbons in the condensates is at most 10%. The 150-200/sup 0/ fractions is 85% paraffin hydrocarbons, while ramified and nonramified structures of paraffin hydrocarbons are found in equal quantities.

  1. Narrow-gap physical vapour deposition synthesis of ultrathin SnS1-xSex (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties.

    Science.gov (United States)

    Gao, Wei; Li, Yongtao; Guo, Jianhua; Ni, Muxun; Liao, Ming; Mo, Haojie; Li, Jingbo

    2018-05-10

    Here we report ultrathin SnS1-xSex alloyed nanosheets synthesized via a narrow-gap physical vapour deposition approach. The SnS1-xSex alloy presents a uniform quadrangle shape with a lateral size of 5-80 μm and a thickness of several nanometers. Clear orthorhombic symmetries and unique in-plane anisotropic properties of the 2D alloyed nanosheets were found with the help of X-ray diffraction, high resolution transmission electron microscopy and polarized Raman spectroscopy. Moreover, 2D alloyed field-effect transistors were fabricated, exhibiting a unipolar p-type semiconductor behavior. This study also provided a lesson that the thickness of the alloyed channels played the major role in the current on/off ratio, and the high ratio of 2.10 × 102 measured from a large ultrathin SnS1-xSex device was two orders of magnitude larger than that of previously reported SnS, SnSe nanosheet based transistors because of the capacitance shielding effect. Obviously enhanced Raman peaks were also found in the thinner nanosheets. Furthermore, the ultrathin SnS0.5Se0.5 based photodetector showed a highest responsivity of 1.69 A W-1 and a short response time of 40 ms under illumination of a 532 nm laser from 405 to 808 nm. Simultaneously, the corresponding highest external quantum efficiency of 392% and detectivity of 3.96 × 104 Jones were also achieved. Hopefully, the narrow-gap synthesis technique provides us with an improved strategy to obtain large ultrathin 2D nanosheets which may tend to grow into thicker ones for stronger interlayer van der Waals forces, and the enhanced physical and (opto)electrical performances in the obtained ultrathin SnS1-xSex alloyed nanosheets prove their great potential in the future applications for versatile devices.

  2. Deposition of titanium coating on SiC fiber by chemical vapor deposition with Ti-I{sub 2} system

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Xian, E-mail: luo_shenfan@hotmail.com; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

    2017-06-01

    Highlights: • The transformation paths of (Ti + I{sub 2}) powder to Ti coating is: Ti + I{sub 2} → (TiI{sub 2}, TiI{sub 3}) → Ti. • Uniform coating was obtained on SiC fiber, but it contained Si and C elements. • Deposition rate of the coating increased with the increase of temperature. • Deposition thickness increased with time and achieved the maximum at 90 min. - Abstract: Titanium coating was prepared on SiC fiber using titanium-iodine (Ti-I{sub 2}) mixture by hot-wall chemical vapor deposition. Thermodynamic analysis and experimental observation were carried out in this work. The thermodynamic analysis of the reactions in the Ti-I{sub 2} system indicates that Ti and I{sub 2} raw powder materials transform to titanium coating as follows: Ti + I{sub 2} → (TiI{sub 2}, TiI{sub 3}), and (TiI{sub 2}, TiI{sub 3}) → Ti. In theory, the conversions of TiI{sub 3} and TiI{sub 2} reach the maximum when Ti:I{sub 2} is 1:1.5, while in actual experiment that reached the maximum when Ti:I{sub 2} was 1:2, as there existed the waste of I{sub 2} due to sublimation. Typical deposited coating is relatively flat and uniform. However, as SiC is prone to react with Ti at high temperatures, the obtained coating contained some Si and C elements except for Ti. So the coating was not a pure Ti coating but contained some carbides and silicides. Deposition rate of the coating increased with the increase of temperature. The deposited thickness increased with the increase of heat preservation time, and achieved the maximum thickness at 90 min.

  3. Novel morphology of chemical vapor deposited diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Tang, C.J. [I3N and Department of Physics, University of Aveiro (Portugal); Jiangsu Key Laboratory for Advanced Functional Materials and Department of Physics, Changshu Institute of Technology, Changshu (China); TEMA and Department of Mechanical Engineering, University of Aveiro (Portugal); Fernandes, A.J.S.; Abe, I.; Pinto, J.L. [I3N and Department of Physics, University of Aveiro (Portugal); Gracio, J. [TEMA and Department of Mechanical Engineering, University of Aveiro (Portugal); Buijnsters, J.G. [Institute for Molecules and Materials (IMM), Radboud University Nijmegen (Netherlands)

    2010-04-15

    We have obtained simultaneously nanocrystalline and {l_brace}100{r_brace} faceted large-grained polycrystalline diamond films not only on different substrates but also on the same substrate in only one deposition run using a novel approach for substrate arrangement. Furthermore, interesting unusual morphologies and microstructures composed by non-faceted nanostructures and terminated with large smooth {l_brace}100{r_brace} facet-like belt are found near the edges of the top square sample. The morphology variation is likely caused by the so called edge effect, where a strong variation in temperature is also present. We have modelled the temperature distribution on the substrates by computer simulations using the finite element method. The novel feature, namely the coexistence of oval non-faceted nanocrystalline diamond grains and large smooth {l_brace}100{r_brace} facet-like belt in one diamond grain, is in the transition from {l_brace}100{r_brace} faceted polycrystalline diamond to cauliflower-like nanocrystalline diamond. The formation mechanism is discussed based on the temperature analysis and other simulation results described in the literature. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kakiuchi, H.; Nakahama, Y.; Ohmi, H.; Yasutake, K.; Yoshii, K.; Mori, Y.

    2005-01-01

    Silicon nitride (SiN x ) films have been prepared at extremely high deposition rates by the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique on Si(001) wafers from gas mixtures containing He, H 2 , SiH 4 and N 2 or NH 3 . A 150 MHz very high frequency (VHF) power supply was used to generate high-density radicals in the atmospheric pressure plasma. Deposition rate, composition and morphology of the SiN x films prepared with various deposition parameters were studied by scanning electron microscopy and Auger electron spectroscopy. Fourier transformation infrared (FTIR) absorption spectroscopy was also used to characterize the structure and the chemical bonding configurations of the films. Furthermore, etching rate with buffered hydrofluoric acid (BHF) solution, refractive index and capacitance-voltage (C-V) characteristics were measured to evaluate the dielectric properties of the films. It was found that effective passivation of dangling bonds and elimination of excessive hydrogen atoms at the film-growing surface seemed to be the most important factor to form SiN x film with a dense Si-N network. The C-V curve of the optimized film showed good interface properties, although further improvement was necessary for use in the industrial metal-insulator-semiconductor (MIS) applications

  5. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  6. Properties of amorphous silicon thin films synthesized by reactive particle beam assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Choi, Sun Gyu; Wang, Seok-Joo; Park, Hyeong-Ho; Jang, Jin-Nyoung; Hong, MunPyo; Kwon, Kwang-Ho; Park, Hyung-Ho

    2010-01-01

    Amorphous silicon thin films were formed by chemical vapor deposition of reactive particle beam assisted inductively coupled plasma type with various reflector bias voltages. During the deposition, the substrate was heated at 150 o C. The effects of reflector bias voltage on the physical and chemical properties of the films were systematically studied. X-ray diffraction and Raman spectroscopy results showed that the deposited films were amorphous and the films under higher reflector voltage had higher internal energy to be easily crystallized. The chemical state of amorphous silicon films was revealed as metallic bonding of Si atoms by using X-ray photoelectron spectroscopy. An increase in reflector voltage induced an increase of surface morphology of films and optical bandgap and a decrease of photoconductivity.

  7. Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Siwei; Zeng Bin; Feng Zude; Liu Yongsheng; Yang Wenbin; Cheng Laifei; Zhang Litong

    2010-01-01

    A two-layer boron carbide coating is deposited on a graphite substrate by chemical vapor deposition from a CH 4 /BCl 3 /H 2 precursor mixture at a low temperature of 950 o C and a reduced pressure of 10 KPa. Coated substrates are annealed at 1600 o C, 1700 o C, 1800 o C, 1900 o C and 2000 o C in high purity argon for 2 h, respectively. Structural evolution of the coatings is explored by electron microscopy and spectroscopy. Results demonstrate that the as-deposited coating is composed of pyrolytic carbon and amorphous boron carbide. A composition gradient of B and C is induced in each deposition. After annealing, B 4 C crystallites precipitate out of the amorphous boron carbide and grow to several hundreds nanometers by receiving B and C from boron-doped pyrolytic carbon. Energy-dispersive spectroscopy proves that the crystallization is controlled by element diffusion activated by high temperature annealing, after that a larger concentration gradient of B and C is induced in the coating. Quantified Raman spectrum identifies a graphitization enhancement of pyrolytic carbon. Transmission electron microscopy exhibits an epitaxial growth of B 4 C at layer/layer interface of the annealed coatings. Mechanism concerning the structural evolution on the basis of the experimental results is proposed.

  8. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ozaydin-Ince, Gozde, E-mail: gozdeince@sabanciuniv.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Matin, Asif, E-mail: amatin@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Khan, Zafarullah, E-mail: zukhan@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Zaidi, S.M. Javaid, E-mail: zaidismj@kfupm.edu.sa [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gleason, Karen K., E-mail: kkgleasn@mit.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2013-07-31

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling.

  9. Electrochromic and electrochemical capacitive properties of tungsten oxide and its polyaniline nanocomposite films obtained by chemical bath deposition method

    CSIR Research Space (South Africa)

    Nwanya, AC

    2014-05-01

    Full Text Available Polyanine and its nanocomposite WO3/PANI films were deposited on fluorine doped tin oxide (FTO) glassslides by simple chemical bath deposition method. The morphology structure of the composite film wasstudied using atomic force microscopy (AFM...

  10. Facile synthesis of graphene on single mode fiber via chemical vapor deposition

    International Nuclear Information System (INIS)

    Zhang, C.; Man, B.Y.; Jiang, S.Z.; Yang, C.; Liu, M.; Chen, C.S.; Xu, S.C.; Feng, D.J.; Bi, D.; Liu, F.Y.; Qiu, H.W.

    2014-01-01

    Direct deposition of graphene film on the standard single mode fiber is offered using a Cu-vapor-assisted chemical vapor deposition system. The gas flow of H 2 and Ar before the growth process plays a crucial role for the direct deposition of the graphene film and the layers of the graphene can be controlled by the growth time. With a large gas flow, Cu atoms are carried off with the gas flow and hard to deposit on the surface of the single mode fiber before the growth process. Consequently, uniform graphene film is obtained in this case. On the contrary, with a lower one, Cu atoms is facile to deposit on the surface of the single mode fiber and form nanodots acting as active catalytic sites for the growth of carbon nanotubes. This method presents us a promising transfer-free technique for fabrication of the photonic applications.

  11. Chemical Bath Deposition and Characterization of CdS layer for CZTS Thin Film Solar Cell

    OpenAIRE

    Kamal, Tasnim; Parvez, Sheikh; Matin, Rummana; Bashar, Mohammad Shahriar; Hossain, Tasnia; Sarwar, Hasan; Rashid, Mohammad Junaebur

    2016-01-01

    CZTS is a new type of an absorber and abundant materials for thin film solar cells (TFSC). Cadmium sulfide (CdS) is the n-type buffer layer of it with band gap of 2.42 eV. Cadmium sulfide (CdS) buffer layer of CZTS solar cell was deposited on soda-lime glass substrates by the Chemical Bath Deposition(CBD) method, using anhydrous Cadmium chloride(CdCl_2) and Thiourea (CS(NH_2)_2). Deposition of CdS using CBD is based on the slow release of Cd^ ions and S^ ions in an alkaline bath which is achi...

  12. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

    2005-01-01

    The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

  13. An economic analysis of the deposition of electrochromic WO{sub 3} via sputtering or plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garg, D. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States); Henderson, P.B. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States)]. E-mail: henderpb@airproducts.co; Hollingsworth, R.E. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States); Jensen, D.G. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States)

    2005-06-15

    The costs of manufacturing electrochromic WO{sub 3} thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO{sub 3} for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF{sub 6}, sputtering cost is dominated by labor and depreciation.

  14. Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition

    International Nuclear Information System (INIS)

    Swain, Bibhu P.

    2006-01-01

    In the present paper, we report the study of the adsorption behavior of human serum albumin (HSA) onto surfaces of a-SiC:H thin films deposited by using the hot wire chemical vapor deposition (HWCVD) technique. The surface composition and surface energy of the various substrates as well as the evaluation of the adsorbed amount of protein has been carried out by means of X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy, AFM and contact angle measurements. At the immediate effect of HSA interaction with a-SiC:H films N is adsorbed on the surface and stabilized after 3 days. Preliminary observation found that Si and O atom are desorbed from the surface while C and N set adsorbed to the surface of the a-SiC:H film

  15. Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Bibhu P. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay (India) and Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, India, Kanpur 208016 (India)]. E-mail: bibhup@iitb.ac.in

    2006-12-15

    In the present paper, we report the study of the adsorption behavior of human serum albumin (HSA) onto surfaces of a-SiC:H thin films deposited by using the hot wire chemical vapor deposition (HWCVD) technique. The surface composition and surface energy of the various substrates as well as the evaluation of the adsorbed amount of protein has been carried out by means of X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy, AFM and contact angle measurements. At the immediate effect of HSA interaction with a-SiC:H films N is adsorbed on the surface and stabilized after 3 days. Preliminary observation found that Si and O atom are desorbed from the surface while C and N set adsorbed to the surface of the a-SiC:H film.

  16. Near-room temperature deposition of W and WO3 thin films by hydrogen atom assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Lee, W.W.; Reeves, R.R.

    1992-01-01

    A novel near-room temperatures CVD process has been developed using H-atoms reaction with WF 6 to produced tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal WO 3 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

  17. Surface morphology and preferential orientation growth of TaC crystals formed by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiong Xiang, E-mail: Xiong228@sina.co [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China); Chen Zhaoke; Huang Baiyun; Li Guodong [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China); Zheng Feng [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Xiao Peng; Zhang Hongbo [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China)

    2009-04-02

    TaC film was deposited on (002) graphite sheet by isothermal chemical vapor deposition using TaCl{sub 5}-Ar-C{sub 3}H{sub 6} mixtures, with deposition temperature 1200 {sup o}C and pressure about 200 Pa. The influence of deposition position (or deposition rate) on preferential orientation and surface morphology of TaC crystals were investigated by X-ray diffraction and scanning electron microscopy methods. The deposits are TaC plus trace of C. The crystals are large individual columns with pyramidal-shape at deposition rate of 32.4-37.3 {mu}m/h, complex columnar at 37.3-45.6 {mu}m/h, lenticular-like at 45.6-54.6 {mu}m/h and cauliflower-like at 54.6-77.3 {mu}m/h, with <001>, near <001>, <110> and no clear preferential orientation, respectively. These results agree in part with the preditions of the Pangarov's model of the relationship between deposition rate and preferential growth orientation. The growth mechanism of TaC crystals in <001>, near <001>, <111> and no clear preferential orientation can be fairly explained by the growth parameter {alpha} with Van der Drift's model, deterioration model and Meakin model. Furthermore, a nucleation and coalescence model is also proposed to explain the formation mechanism of <110> lenticular-like crystals.

  18. CN distribution in flame deposition of diamond and its relation to the growth rate, morphology, and nitrogen incorporation of the diamond layer

    NARCIS (Netherlands)

    Klein-Douwel, R.J.H.; Schermer, J.J.; Meulen, ter J.J.

    1998-01-01

    Two-dimensional laser-induced fluorescence (2D-LIF) measurements areapplied to the chemical vapour deposition (CVD) of diamond by anoxyacetylene flame to visualize the distribution of CN in the gas phaseduring the diamond growth process. The obtained diamond deposits arecharacterized by optical as

  19. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Administrator

    CaCu3Ti4O12; thin film; chemical solution deposition; dielectric properties. 1. Introduction. The CaCu3Ti4O12. (CCTO) compound has recently attracted considerable ... and Kelvin probe force microscopy (Chung et al 2004). Intrinsic .... SEM images of CCTO thin films as a function of sintering temperature. silicon based ...

  20. Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process

    CSIR Research Space (South Africa)

    Thabethe, BS

    2013-01-01

    Full Text Available The authors report on the synthesis of tin oxide (SnO(sub2)) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050°C for 30 minutes with argon gas continuously passing through the system...

  1. Prospects of chemically deposited CoS-CU2S coatings for solar ...

    African Journals Online (AJOL)

    The thin films of Cu2S deposited on CoS-precoated glass substrates from chemical baths and annealed at 100oC were found to have desirable solar control characteristics superior to commercial tinted glass and magnetron sputtered multilayer metallic solar control coatings. These include: transmission spectra in the ...

  2. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    Science.gov (United States)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  3. Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

    DEFF Research Database (Denmark)

    Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

    2012-01-01

    Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

  4. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei; Fan, Zhongli; Zeng, Gaofeng; Lai, Zhiping

    2013-01-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found

  5. Influence of the catalyst type on the growth of carbon nanotubes via methane chemical vapor deposition

    NARCIS (Netherlands)

    Jodin, Lucie; Dupuis, Anne-Claire; Rouvière, Emmanuelle; Reiss, Peter

    2006-01-01

    The preparation of the catalyst is one of the key parameters which governs the quality of carbon nanotubes (CNTs) grown by catalyzed chemical vapor deposition (CVD). We investigated the influence of three different procedures of catalyst preparation on the type and diameter of CNTs formed under

  6. The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

    Science.gov (United States)

    Maraeva, E. V.; Alexandrova, O. A.; Forostyanaya, N. A.; Levitskiy, V. S.; Mazing, D. S.; Maskaeva, L. N.; Markov, V. Ph; Moshnikov, V. A.; Shupta, A. A.; Spivak, Yu M.; Tulenin, S. S.

    2015-11-01

    In this study lead sulphide - cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements.

  7. The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

    International Nuclear Information System (INIS)

    Maraeva, E V; Alexandrova, O A; Levitskiy, V S; Mazing, D S; Moshnikov, V A; Shupta, A A; Spivak, Yu M; Forostyanaya, N A; Maskaeva, L N; Markov, V Ph; Tulenin, S S

    2015-01-01

    In this study lead sulphide – cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements. (paper)

  8. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Oliveira, M. H.; Viana, G. A.; de Lima, M. M.; Cros, A.; Cantarero, A.; Marques, F. C.

    2010-12-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  9. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH 4 ) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  10. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.

    2005-01-01

    Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical...... in optical waveguides. This means that the annealing temperature must be high enough to break the N-H bonds, but no so high as to produce clusters. Therefore, the process window for an annealing step lies between 1100 and 1150 oC. The chemical composition of amorphous silicon-rich nitride has been...... investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

  11. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

    Science.gov (United States)

    Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

    2018-04-12

    Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

  12. Zinc Sulfide Buffer Layer for CIGS Solar Cells Prepared by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Rui-Wei You

    2016-11-01

    Full Text Available In this study, ZnS thin films were successfully synthesized by chemical bath deposition (CBD with starting materials of NH2-NH2, SC(NH22, and ZnSO4‧7H2O. ZnS thin films were deposited with different time on glass substrates by CBD at 80oC and pH=9. Based on X-ray diffraction (XRD patterns, it is found that the ZnS thin films exhibit cubic polycrystalline phase. It was found that the optimum deposition time is 90 min for preparing ZnS thin film that is suitable as buffer layer for CuIn1-xGaxSe2 solar cells. The thin film deposited for 90 min has high transmittance up to 80% in the spectra range from 350 nm to 800 nm, and the optical band gap is about 3.59 eV.

  13. One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface

    Science.gov (United States)

    Thongrom, Sukrit; Tirawanichakul, Yutthana; Munsit, Nantakan; Deangngam, Chalongrat

    2018-02-01

    We demonstrate a rapid and environmental friendly fabrication technique to produce optically clear superhydrophobic surfaces using poly (dimethylsiloxane) (PDMS) as a sole coating material. The inert PDMS chain is transformed into a 3-D irregular solid network through microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. Thanks to high electron density in the microwave-activated plasma, coating can be done in just a single step with rapid deposition rate, typically much shorter than 10 s. Deposited layers show excellent superhydrophobic properties with water contact angles of ∼170° and roll-off angles as small as ∼3°. The plasma-deposited films can be ultrathin with thicknesses under 400 nm, greatly diminishing the optical loss. Moreover, with appropriate coating conditions, the coating layer can even enhance the transmission over the entire visible spectrum due to a partial anti-reflection effect.

  14. Investigation of CdS/InP heterojunction prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Rakovics, V.; Horvath, Zs.J.; Horvath, Zs.E.; Barsony, I.; Frigeri, C.; Besagni, T.

    2007-01-01

    CdS thin films have been deposited on InP and glass substrates using the chemical bath deposition technique. Baths containing CdSO 4 , thiourea, and NH 3 were used. The temperature of the deposition process was 65 C and the duration of deposition varied between 20 and 160 minutes. The properties of the CdS/InP heterojunction were investigated by TEM, EDS and X-ray diffraction. TEM pictures, EDS and X-ray rocking curves indicate the formation of a β-In 2 S 3 transition layer at the InP-CdS interface, which may reduce the lattice mismatch between InP and CdS. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Textured indium tin oxide thin films by chemical solution deposition and rapid thermal processing

    International Nuclear Information System (INIS)

    Mottern, Matthew L.; Tyholdt, Frode; Ulyashin, Alexander; Helvoort, Antonius T.J. van; Verweij, Henk; Bredesen, Rune

    2007-01-01

    The microstructure of state-of-the-art chemical solution deposited indium tin oxide thin films typically consists of small randomly oriented grains, high porosity and poor homogeneity. The present study demonstrates how the thin film microstructure can be improved significantly by tailoring the precursor solutions and deposition conditions to be kinetically and thermodynamically favorable for generation of homogeneous textured thin films. This is explained by the occurrence of a single heterogeneous nucleation mechanism. The as-deposited thin films, crystallized at 800 deg. C, have a high apparent density, based on a refractive index of ∼ 1.98 determined by single wavelength ellipsometry at 633 nm. The microstructure of the films consists of columnar grains with preferred orientation as determined by X-ray diffraction and transmission electron microscopy. The resistivity, measured by the four point probe method, is ∼ 2 x 10 -3 Ω cm prior to post-deposition treatments

  16. Importance of deposit information in the design and execution of steam generator chemical cleaning

    International Nuclear Information System (INIS)

    Flores, O.; Remark, J.

    1997-01-01

    During the planning stages of the chemical cleaning of the San Onofre Nuclear Generating Station (SONGS) units 2 and 3 steam generators, it was determined that an understanding of the steam generator deposit loading and composition was essential to the design and success of the project. It was also determined that qualification testing, preferably with actual deposits from the SONGS steam generators, was also essential. SONGS units 2 and 3 have Combustion Engineering (CE)-designed pressurized water reactors. Each unit has two CE model 3410 steam generators. Each steam generator has 9350 alloy 600 tubes with 1.9-cm (3/4 in.) outside diameter. Unit 2 began commercial operation in 1983, and unit 3, in 1984. The purpose of this technical paper is to explain the effort and methodology for deposit composition, characterization, and quantification. In addition, the deposit qualification testing and design of the cleaning are discussed

  17. Chemical processes, desired and undesired, in the selective chemical vapor deposition of tungsten

    International Nuclear Information System (INIS)

    Wilson, R.H.

    1988-01-01

    The deposition of tungsten by the hydrogen reduction of tungsten hexafluoride is discussed in the context of its application in integrated circuits. The overall reaction is relatively simple; however, numerous competing reactions and their implications are discussed. In addition, those areas which could benefit from further investigation are identified

  18. On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Handuja Sangeeta

    2010-01-01

    Full Text Available Abstract Carbon nanotubes (CNTs were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.

  19. Limitations of patterning thin films by shadow mask high vacuum chemical vapor deposition

    International Nuclear Information System (INIS)

    Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

    2014-01-01

    A key factor in engineering integrated devices such as electro-optic switches or waveguides is the patterning of high quality crystalline thin films into specific geometries. In this contribution high vacuum chemical vapor deposition (HV-CVD) was employed to grow titanium dioxide (TiO 2 ) patterns onto silicon. The directed nature of precursor transport – which originates from the high vacuum environment during the process – allows shading certain regions on the substrate by shadow masks and thus depositing patterned thin films. While the use of such masks is an emerging field in stencil or shadow mask lithography, their use for structuring thin films within HV-CVD has not been reported so far. The advantage of the employed technique is the precise control of lateral spacing and of the distance between shading mask and substrate surface which is achieved by manufacturing them directly on the substrate. As precursor transport takes place in the molecular flow regime, the precursor impinging rates (and therefore the film growth rates) on the surface can be simulated as function of the reactor and shading mask geometry using a comparatively simple mathematical model. In the current contribution such a mathematical model, which predicts impinging rates on plain or shadow mask structured substrates, is presented. Its validity is confirmed by TiO 2 -deposition on plain silicon substrates (450 °C) using titanium tetra isopropoxide as precursor. Limitations of the patterning process are investigated by the deposition of TiO 2 on structured substrates and subsequent shadow mask lift-off. The geometry of the deposits is according to the mathematical model. Shading effects due to the growing film enables to fabricate deposits with predetermined variations in topography and non-flat top deposits which are complicated to obtain by classical clean room processes. As a result of the enhanced residual pressure of decomposition products and titanium precursors and the

  20. A study of the performance and properties of diamond like carbon (DLC) coatings deposited by plasma chemical vapor deposition (CVD) for two stroke engine components

    Energy Technology Data Exchange (ETDEWEB)

    Tither, D. [BEP Grinding Ltd., Manchester (United Kingdom); Ahmed, W.; Sarwar, M.; Penlington, R. [Univ. of Northumbria, Newcastle-upon-Tyne (United Kingdom)

    1995-12-31

    Chemical vapor deposition (CVD) using microwave and RF plasma is arguably the most successful technique for depositing diamond and diamond like carbon (DLC) films for various engineering applications. However, the difficulties of depositing diamond are nearly as extreme as it`s unique combination of physical, chemical and electrical properties. In this paper, the modified low temperature plasma enhanced CVD system is described. The main focus of this paper will be work related to deposition of DLC on metal matrix composite materials (MMCs) for application in two-stroke engine components and results will be presented from SEM, mechanical testing and composition analysis studies. The authors have demonstrated the feasibility of depositing DLC on MMCs for the first time using a vacuum deposition process.

  1. Physical and chemical properties of deposited airborne particulates over the Arabian Red Sea coastal plain

    KAUST Repository

    Engelbrecht, Johann

    2017-09-27

    Mineral dust is the most abundant aerosol, having a profound impact on the global energy budget. This research continues our previous studies performed on surface soils in the Arabian Peninsula, focusing on the mineralogical, physical and chemical composition of dust deposits from the atmosphere at the Arabian Red Sea coast. For this purpose, aerosols deposited from the atmosphere are collected during 2015 at six sites on the campus of the King Abdullah University of Science and Technology (KAUST) situated on the Red Sea coastal plain of Saudi Arabia and subjected to the same chemical and mineralogical analysis we conducted on soil samples. Frisbee deposition samplers with foam inserts were used to collect dust and other deposits, for the period December 2014 to December 2015. The average deposition rate measured at KAUST for this period was 14 g m−2 per month, with lowest values in winter and increased deposition rates in August to October. The particle size distributions provide assessments of  < 10 and  < 2.5 µm dust deposition rates, and it is suggested that these represent proxies for PM10 (coarse) and PM2. 5 (fine) particle size fractions in the dust deposits. X-ray diffraction (XRD) analysis of a subset of samples confirms variable amounts of quartz, feldspars, micas, and halite, with lesser amounts of gypsum, calcite, dolomite, hematite, and amphibole. Freeze-dried samples were re-suspended onto the Teflon® filters for elemental analysis by X-ray fluorescence (XRF), while splits from each sample were analyzed for water-soluble cations and anions by ion chromatography. The dust deposits along the Red Sea coast are considered to be a mixture of dust emissions from local soils and soils imported from distal dust sources. Airborne mineral concentrations are greatest at or close to dust sources, compared to those through medium- and long-range transport. It is not possible to identify the exact origin of deposition samples from the

  2. Effect of deposition temperature on the structural, morphological and optical band gap of lead selenide thin films synthesized by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Hone, Fekadu Gashaw, E-mail: fekeye@gmail.com [Hawassa University, Department of Physics, Hawassa (Ethiopia); Ampong, Francis Kofi [Kwame Nkrumah University of Science and Technology, Department of Physics, Kumasi (Ghana)

    2016-11-01

    Lead selenide (PbSe) nanocrystalline thin films have been deposited on silica glass substrates by the chemical bath deposition technique. The samples were deposited at the bath temperatures of 60, 75 and 90 °C respectively and characterized by a variety of techniques. The XRD results revealed that the PbSe thin film deposited at 60 °C was amorphous in nature. Films deposited at higher temperatures exhibited sharp and intense diffraction peaks, indicating an improvement in crystallinety. The deposition temperature also had a strong influence on the preferred orientation of the crystallites as well as other structural parameters such as microstrain and dislocation density. From the SEM study it was observed that film deposited at 90 °C had well defined crystallites, uniformly distributed over the entire surface of the substrate. The EDAX study confirmed that the samples deposited at the higher temperature had a better stoichiometric ratio. The optical band gap varied from 2.26 eV to 1.13 eV with increasing deposition temperature. - Highlights: • The crystallinety of the films improved as the deposition temperature increased. • The deposition temperature strongly influenced the preferred orientations. • Microstrain and dislocation density are decreased linearly with deposition temperature. • Band gap decreased from 2.26 eV to 1.13 eV as the deposition temperature increased.

  3. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  4. Young Investigator Proposal, Research Area 7.4 Reactive Chemical Systems: Multifunctional, Bimetallic Nanomaterials Prepared by Atomic Layer Electroless Deposition

    Science.gov (United States)

    2017-09-30

    Report: Young Investigator Proposal, Research Area 7.4 Reactive Chemical Systems: Multifunctional, Bimetallic Nanomaterials Prepared by Atomic Layer ...Chemical Systems: Multifunctional, Bimetallic Nanomaterials Prepared by Atomic Layer Electroless Deposition Report Term: 0-Other Email: pcappillino... Layer Electroless Deposition (ALED, Figure 1) is the ability to tune growth mechanism, hence growth morphology, by altering conditions. In this

  5. Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Yujun, E-mail: shiy@ucalgary.ca; Tong, Ling; Mulmi, Suresh [Department of Chemistry, University of Calgary, Calgary, Alberta T2N 1N4 (Canada)

    2016-09-15

    Metal filament plays a key role in the technique of catalytic chemical vapor deposition (Cat-CVD) as it serves as a catalyst in dissociating the source gas to form reactive species. These reactive species initiate the gas-phase reaction chemistry and final thin film and nanostructure formation. At the same time, they also react with the metal itself, leading to the formation of metal alloys and other deposits. The deposits on the tungsten filaments when exposed to 1,1-dimethylsilacyclobutane (DMSCB), a single-source precursor for silicon carbide thin films, in the process of Cat-CVD were studied in this work. It has been demonstrated that a rich variety of deposits, including tungsten carbides (W{sub 2}C and WC), tungsten silicide (W{sub 5}Si{sub 3}), silicon carbide, amorphous carbon, and graphite, form on the W filament surfaces. The structural and morphological changes in the tungsten filaments depend strongly on the DMSCB pressure and filament temperature. At 1000 and 2000 °C, the formation of WC and W{sub 2}C dominates. In addition, a thin amorphous carbon layer has been found at 1500 °C with the 0.12 and 0.24 Torr of DMSCB and a lower temperature of 1200 °C with the 0.48 Torr of DMSCB. An increase in the DMSCB sample pressure gives rise to higher Si and C contents. As a result, the formation of SiC and W{sub 5}Si{sub 3} has been observed with the two high-pressure DMSCB samples (i.e., 0.24 and 0.48 Torr). The rich decomposition chemistry of DMSCB on the W surfaces is responsible for the extensive changes in the structure of the W filament, providing support for the close relationship between the gas-phase decomposition chemistry and the nature of alloy formation on the metal surface. The understanding of the structural changes obtained from this work will help guide the development of efficient methods to solve the filament aging problem in Cat-CVD and also to achieve a controllable deposition process.

  6. Morphology and growth behavior of O_2-free chemical bath deposited ZnS thin films

    International Nuclear Information System (INIS)

    Jet Meitzner, K.; Tillotson, Brock M.; Siedschlag, Amanda T.; Moore, Frederick G.; Kevan, Stephen D.; Richmond, Geraldine L.

    2015-01-01

    We investigate the role of reagent concentrations and ambient O_2 on the morphology and growth behavior of ZnS thin films grown with the chemical bath deposition method. We investigate the role of substrate on film morphology, and find significant differences between films deposited on SiO_2 versus Si. The films are also sensitive to dissolved O_2 in the bath, as it causes a layer of SiO_2 to form at the ZnS/Si interface during deposition. Degassing of solutions and an N_2 atmosphere are effective to minimize this oxidation, allowing deposition of ZnS films directly onto Si. Under these conditions, we examine film properties as they relate to reagent bath concentrations. As the reagent concentrations are decreased, both the film roughness and growth rate decrease linearly. We also observe deformation and shifting of X-ray diffraction peaks that increases with decreasing reagent concentrations. The shifts are characteristic of lattice compression (caused by the substitution of oxygen for sulfur), and the deformation is characteristic of distortion of the lattice near crystal grain interfaces (caused by tensile stress from interatomic forces between neighboring crystal grains). At the weakest concentrations, the low roughness suggests a mixed growth mode in which both clusters and individual ZnS nanocrystallites contribute to film growth. With increasing reagent concentrations, the growth mode shifts and becomes dominated by deposition of clusters. - Highlights: • We deposit ZnS thin films by chemical bath deposition in an O_2-free environment. • The O_2-free environment is effective to minimize oxidation of the Si substrate. • The dominant growth mechanism changes with reagent concentrations. • Film morphology and composition change with reagent concentrations. • X-ray diffraction reveals tensile stress between ZnS crystal grains.

  7. Precise control of multiwall carbon nanotube diameters using thermal chemical vapor deposition

    Science.gov (United States)

    Siegal, M. P.; Overmyer, D. L.; Provencio, P. P.

    2002-03-01

    We grow multiwall carbon nanotube (CNT) films using thermal chemical vapor deposition at atmospheric pressure using a mixture of acetylene and nitrogen from a 4-nm-thick Ni film catalyst. CNTs are characterized using electron microscopy and Rutherford backscattering spectrometry. CNTs grown with this method are extremely uniform in diameter, both throughout the sample and within the lengths of individual tubes. Nanotube outer diameters, ranging from 5-350 nm, and the total deposition of carbon material, increase exponentially with growth temperature from 630 °C-790 °C.

  8. Physical and chemical properties of deposited airborne particulates over the Arabian Red Sea coastal plain

    Science.gov (United States)

    Engelbrecht, Johann P.; Stenchikov, Georgiy; Jish Prakash, P.; Lersch, Traci; Anisimov, Anatolii; Shevchenko, Illia

    2017-09-01

    Mineral dust is the most abundant aerosol, having a profound impact on the global energy budget. This research continues our previous studies performed on surface soils in the Arabian Peninsula, focusing on the mineralogical, physical and chemical composition of dust deposits from the atmosphere at the Arabian Red Sea coast. For this purpose, aerosols deposited from the atmosphere are collected during 2015 at six sites on the campus of the King Abdullah University of Science and Technology (KAUST) situated on the Red Sea coastal plain of Saudi Arabia and subjected to the same chemical and mineralogical analysis we conducted on soil samples. Frisbee deposition samplers with foam inserts were used to collect dust and other deposits, for the period December 2014 to December 2015. The average deposition rate measured at KAUST for this period was 14 g m-2 per month, with lowest values in winter and increased deposition rates in August to October. The particle size distributions provide assessments of particle size fractions in the dust deposits.X-ray diffraction (XRD) analysis of a subset of samples confirms variable amounts of quartz, feldspars, micas, and halite, with lesser amounts of gypsum, calcite, dolomite, hematite, and amphibole. Freeze-dried samples were re-suspended onto the Teflon® filters for elemental analysis by X-ray fluorescence (XRF), while splits from each sample were analyzed for water-soluble cations and anions by ion chromatography. The dust deposits along the Red Sea coast are considered to be a mixture of dust emissions from local soils and soils imported from distal dust sources. Airborne mineral concentrations are greatest at or close to dust sources, compared to those through medium- and long-range transport. It is not possible to identify the exact origin of deposition samples from the mineralogical and chemical results alone. These aerosol data are the first of their kind from the Red Sea region. They will help assess their potential

  9. Chemical bath deposited PbS thin films on ZnO nanowires for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Gertman, Ronen [Dept of Chemistry, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Osherov, Anna; Golan, Yuval [Dept of Materials Engineering, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Visoly-Fisher, Iris, E-mail: irisvf@bgu.ac.il [Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, Jacob Blaustein Institutes for Desert Research, Ben Gurion University of the Negev, Sede Boqer Campus 84990 (Israel)

    2014-01-01

    Photovoltaic devices usually exploit mid-range band-gap semiconductors which absorb in the visible range of the solar spectrum. However, much energy is lost in the IR and near-IR range. We combined the advantages of small band-gap, bulk-like PbS deposited by facile, cheap and direct chemical bath deposition (CBD), with the good electronic properties of ZnO and the large surface area of nanowires, towards low cost photovoltaic devices utilizing IR and near-IR light. Surprisingly, CBD of PbS on ZnO, and particularly on ZnO nanowires, was not studied hitherto. Therefore, the mechanism of PbS growth by chemical bath deposition on ZnO nanowires was studied in details. A visible proof is shown for a growth mechanism starting from amorphous Pb(OH){sub 2} layer, that evolved into the ‘ion-by-ion’ growth mechanism. The growth mechanism and the resulting morphology at low temperatures were controlled by the thiourea concentration. The grain size affected the magnitude of the band-gap and was controlled by the deposition temperatures. Deposition above 40 °C resulted in bulk-like PbS with an optical band-gap of 0.4 eV. Methods were demonstrated for achieving complete PbS coverage of the complex ZnO NW architecture, a crucial requirement in optoelectronic devices to prevent shorts. Measurements of photocurrents under white and near-IR (784 nm) illumination showed that despite a 200 meV barrier for electron transfer at the PbS/ZnO interface, extraction of photo-electrons from PbS to the ZnO was feasible. The ability to harvest electrons from a narrow band-gap semiconductor deposited on a large surface-area electrode can advance the field towards high efficiency, low cost IR and near-IR sensors and third generation solar cells. - Highlights: • PbS was deposited on ZnO nanowires using chemical bath deposition. • At 50 °C the growth mechanism starts from an amorphous Pb(OH){sub 2} layer. • At 5 °C the growth mechanism of PbS can be controlled by thiourea concentrations

  10. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Shaji, S.; Garcia, L.V.; Loredo, S.L.; Krishnan, B.

    2017-01-01

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb_2S_3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb_2S_3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb_2S_3 thin films for optoelectronic applications.

  11. Dissolution of synthetic uranium dibutyl phosphate deposits in oxidizing and reducing chemical formulations

    International Nuclear Information System (INIS)

    Rufus, A.L.; Sathyaseelan, V.S.; Narasimhan, S.V.; Velmurugan, S.

    2013-01-01

    Graphical abstract: SEM of the U-DBP coated stainless steel coupon before and after exposure to chemical formulation containing acid permanganate at 80 °C. -- Highlights: •Combination of oxidation and reduction processes efficiently dissolves U-DBP deposits. •NP and NAC formulations are compatible with SS-304. •Dissolved uranium and added chemicals are effectively removed via ion exchangers. -- Abstract: Permanganate and nitrilotriacetic acid (NTA) based dilute chemical formulations were evaluated for the dissolution of uranium dibutyl phosphate (U-DBP), a compound that deposits over the surfaces of nuclear reprocessing plants and waste storage tanks. A combination of an acidic, oxidizing treatment (nitric acid with permanganate) followed by reducing treatment (NTA based formulation) efficiently dissolved the U-DBP deposits. The dissolution isotherm of U-DBP in its as precipitated form followed a logarithmic fit. The same chemical treatment was also effective in dissolving U-DBP coated on the surface of 304-stainless steel, while resulting in minimal corrosion of the stainless steel substrate material. Investigation of uranium recovery from the resulting decontamination solutions by ion exchange with a bed of mixed anion and cation resins showed quantitative removal of uranium

  12. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); Garcia, L.V. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); Loredo, S.L. [Centro de Investigación en Materiales Avanzados (CIMAV), Unidad Monterrey, PIIT, Apodaca, Nuevo León (Mexico); Krishnan, B. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); and others

    2017-01-30

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb{sub 2}S{sub 3}) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb{sub 2}S{sub 3} thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb{sub 2}S{sub 3} thin films for optoelectronic applications.

  13. Dissolution of synthetic uranium dibutyl phosphate deposits in oxidizing and reducing chemical formulations

    Energy Technology Data Exchange (ETDEWEB)

    Rufus, A.L.; Sathyaseelan, V.S.; Narasimhan, S.V.; Velmurugan, S., E-mail: svelu@igcar.gov.in

    2013-06-15

    Graphical abstract: SEM of the U-DBP coated stainless steel coupon before and after exposure to chemical formulation containing acid permanganate at 80 °C. -- Highlights: •Combination of oxidation and reduction processes efficiently dissolves U-DBP deposits. •NP and NAC formulations are compatible with SS-304. •Dissolved uranium and added chemicals are effectively removed via ion exchangers. -- Abstract: Permanganate and nitrilotriacetic acid (NTA) based dilute chemical formulations were evaluated for the dissolution of uranium dibutyl phosphate (U-DBP), a compound that deposits over the surfaces of nuclear reprocessing plants and waste storage tanks. A combination of an acidic, oxidizing treatment (nitric acid with permanganate) followed by reducing treatment (NTA based formulation) efficiently dissolved the U-DBP deposits. The dissolution isotherm of U-DBP in its as precipitated form followed a logarithmic fit. The same chemical treatment was also effective in dissolving U-DBP coated on the surface of 304-stainless steel, while resulting in minimal corrosion of the stainless steel substrate material. Investigation of uranium recovery from the resulting decontamination solutions by ion exchange with a bed of mixed anion and cation resins showed quantitative removal of uranium.

  14. Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System

    Directory of Open Access Journals (Sweden)

    Shiu-Ko JangJian

    2007-01-01

    Full Text Available The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS, respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS. The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and the CuOx bonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced by NF3 ddissociation in the RPS and that induces the drastic decrease on PCR.

  15. Optical and structural characterization of nickel oxide-based thin films obtained by chemical bath deposition

    International Nuclear Information System (INIS)

    Vidales-Hurtado, M.A.; Mendoza-Galvan, A.

    2008-01-01

    Nickel oxide-based thin films were obtained using the chemical bath deposition method on glass and silicon substrates. The precursor solution used was a mixture of nickel nitrate, urea, and deionized water. Molar concentration of nickel (0.3-1.0 M), deposition time, and immersing cycles were considered as deposition variables. Infrared spectroscopy and X-ray diffraction data reveal that all as-deposited films correspond to the transparent turbostratic phase α(II)-Ni(OH) 2 . However, the rate of deposition depends on nickel content in the solution. After annealing in air at temperatures above of 300 deg. C, the films are transformed to the NiO phase and show a grey/black color. In these films, scanning electron microscopy images show aggregates of thin stacked sheets on their surface, such aggregates can be easily removed leaving only a thin NiO layer of about 30 nm adhered firmly to the substrate, regardless of nickel concentration in the solution and deposition time. In order to obtain thicker NiO films with good optical properties a procedure is developed performing several immersing-annealing cycles

  16. Kinetics of low pressure chemical vapor deposition of tungsten silicide from dichlorocilane reduction of tungsten hexafluoride

    International Nuclear Information System (INIS)

    Srinivas, D.; Raupp, G.B.; Hillman, J.

    1990-01-01

    The authors report on experiments to determine the intrinsic surface reaction rate dependences and film properties' dependence on local reactant partial pressures and wafer temperature in low pressure chemical vapor deposition (LPCVD) of tungsten silicide from dichlorosilane reduction of tungsten hexafluoride. Films were deposited in a commercial-scale Spectrum CVD cold wall single wafer reactor under near differential, gradientless conditions. Over the range of process conditions investigated, deposition rate was found to be first order in dichlorosillane and negative second order in tungsten hexafluoride partial pressure. The apparent activation energy in the surface reaction limited regime was found to be 70-120 kcal/mol. The silicon to tungsten ratio of as deposited silicide films ranged from 1.1 to 2.4, and increased with increasing temperature and dichlorosillane partial pressure, and decreased with increasing tungsten hexafluoride pressure. These results suggest that the apparent silicide deposition rate and composition are controlled by the relative rates of at least two competing reactions which deposit stoichiometric tungsten silicides and/or silicon

  17. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu Xuanyong; Chu, Paul K.; Ding Chuanxian

    2007-01-01

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans

  18. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuanyong [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: xyliu@mail.sic.ac.cn; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk; Ding Chuanxian [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

    2007-01-15

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter <1 0 0> silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans.

  19. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  20. Diamond-coated three-dimensional GaN micromembranes: effect of nucleation and deposition techniques

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Vanko, G.; Babchenko, Oleg; Potocký, Štěpán; Marton, M.; Vojs, M.; Choleva, P.; Kromka, Alexander

    2015-01-01

    Roč. 252, č. 11 (2015), s. 2585-2590 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GP14-16549P Institutional support: RVO:68378271 Keywords : diamond film * GaN micromembranes * microwave chemical vapour deposition * polymer-based nucleation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.522, year: 2015

  1. Chemical nature of catalysts of oxide nanoparticles in environment

    Indian Academy of Sciences (India)

    Carbon nanostructures (CNS) are often grown using oxide nanoparticles as catalyst in chemical vapour deposition and these oxides are not expected to survive as such during growth. In the present study, the catalysts of cobalt- and nickel oxide-based nanoparticles of sizes varying over a range have been reduced at 575 ...

  2. Growth of different phases and morphological features of MnS thin films by chemical bath deposition: Effect of deposition parameters and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com; Maghraoui-Meherzi, Hager

    2017-03-15

    Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferential orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like. - Graphical Abstract: We report the preparation of different phases of manganese sulfide thin films (γ, β and α-MnS) by chemical bath deposition method. The effects of deposition parameters such as deposition time and temperature, concentrations of precursors and multi-layer deposition on MnS thin films structure and morphology were investigated. The influence of thermal annealing under nitrogen atmosphere at different temperature on MnS properties was also studied. Different manganese precursors as well as different complexing agent were also used. - Highlights: • γ and β-MnS films were deposited on substrate using the chemical bath deposition. • The effect of deposition parameters on MnS film properties has been investigated. • Multi-layer deposition was also studied to increase film thickness. • The effect of annealing under N{sub 2} at different temperature was investigated.

  3. Effect of protic solvents on CdS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Pin-Chuan, E-mail: pcyao@mail.dyu.edu.tw; Chen, Chun-Yu

    2015-03-31

    In this study, cadmium sulfide (CdS) thin films are grown on glass substrates by chemical bath deposition (CBD) in an aqueous bath containing 10–20 vol.% alcohol. The roles of ethanol as a protic solvent that substantially improves the quality of films are explored extensively. The deposited films in an alcohol bath are found to be more compact and smoother with smaller CdS grains. The X-ray diffractograms of the samples confirm that all films were polycrystalline with mixed wurtzite (hexagonal) and zinkblende (cubic) phases. Raman spectra indicate that, for a film deposited in an alcohol bath, the position of 1LO is closer to the value for single crystal CdS, indicating that these films have a high degree of crystallinity. The as-deposited CdS thin films in a 10 vol.% alcohol bath were found to have the highest visible transmittance of 81.9%. XPS analysis reveals a stronger signal of C1s for samples deposited in the alcohol baths, indicating that there are more carbonaceous residues on the films with protic solvent than on the films with water. A higher XPS S/Cd atomic ratio for films deposited in an alcohol bath indicates that undesirable surface reactions (leading to sulfur containing compounds other than CdS) occur less frequently over the substrates. - Highlights: • Study of CBD-CdS films grown in an alcohol-containing aqueous bath is reported. • The deposited films in an alcohol bath are more compact with smaller CdS grains. • Raman spectra show that in an alcohol bath, the CdS film has a better crystallinity. • XPS reveals more carbon residues remain on the films deposited using alcohol bath. • In an alcohol bath, the undesirable surface reactions with Cd ions were hindered.

  4. Coating of carbon short fibers with thin ceramic layers by chemical vapor deposition

    International Nuclear Information System (INIS)

    Hackl, Gerrit; Gerhard, Helmut; Popovska, Nadejda

    2006-01-01

    Carbon short fiber bundles with a length of 6 mm were uniformly coated using specially designed, continuous chemical vapor deposition (CVD) equipment. Thin layers of titanium nitride, silicon nitride (SiC) and pyrolytic carbon (pyC) were deposited onto several kilograms of short fibers in this large scale CVD reactor. Thermo-gravimetric analyses and scanning electron microscopy investigations revealed layer thicknesses between 20 and 100 nm on the fibers. Raman spectra of pyC coated fibers show a change of structural order depending on the CVD process parameters. For the fibers coated with SiC, Raman investigations showed a deposition of amorphous SiC. The coated carbon short fibers will be applied as reinforcing material in composites with ceramic and metallic matrices

  5. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

    Science.gov (United States)

    Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

    2018-04-01

    Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

  6. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  7. Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

    Directory of Open Access Journals (Sweden)

    Valentina V. Utochnikova

    2012-01-01

    Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

  8. Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

    Science.gov (United States)

    Thurn, Jeremy; Cook, Robert F.

    2002-02-01

    The mechanical response of plasma-enhanced chemical vapor deposited SiO2 to thermal cycling is examined by substrate curvature measurement and depth-sensing indentation. Film properties of deposition stress and stress hysteresis that accompanied thermal cycling are elucidated, as well as modulus, hardness, and coefficient of thermal expansion. Thermal cycling is shown to result in major plastic deformation of the film and a switch from a compressive to a tensile state of stress; both athermal and thermal components of the net stress alter in different ways during cycling. A mechanism of hydrogen incorporation and release from as-deposited silanol groups is proposed that accounts for the change in film properties and state of stress.

  9. Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

    2018-06-01

    Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

  10. High quality antireflective ZnS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

    2012-01-01

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  11. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Lecarpentier, F.; Daglish, M.; Kemmitt, T.

    2001-01-01

    Ferroelectric thin films of lead zirconate titanate Pb(Zr x Ti 1-x )O 3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  12. Chemical, mechanical, and tribological properties of pulsed-laser-deposited titanium carbide and vanadium carbide

    International Nuclear Information System (INIS)

    Krzanowski, J.E.; Leuchtner, R.E.

    1997-01-01

    The chemical, mechanical, and tribological properties of pulsed-laser-deposited TiC and VC films are reported in this paper. Films were deposited by ablating carbide targets using a KrF (λ = 248 nm) laser. Chemical analysis of the films by XPS revealed oxygen was the major impurity; the lowest oxygen concentration obtained in a film was 5 atom%. Oxygen was located primarily on the carbon sublattice of the TiC structure. The films were always substoichiometric, as expected, and the carbon in the films was identified primarily as carbidic carbon. Nanoindentation hardness tests gave values of 39 GPa for TiC and 26 GPa for VC. The friction coefficient for the TiC films was 0.22, while the VC film exhibited rapid material transfer from the steel ball to the substrate resulting in steel-on-steel tribological behavior

  13. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.; Smith, Casey; Hussain, Muhammad Mustafa

    2014-01-01

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Complete long-term corrosion protection with chemical vapor deposited graphene

    DEFF Research Database (Denmark)

    Yu, Feng; Camilli, Luca; Wang, Ting

    2018-01-01

    Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer-graphene......Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer......-graphene hybrid coating, comprising two single layers of CVD graphene sandwiched by three layers of polyvinyl butyral, which provides complete corrosion protection of commercial aluminum alloys even after 120 days of exposure to simulated seawater. The essential role played by graphene in the hybrid coating...

  16. Room temperature synthesis and characterization of CdO nanowires by chemical bath deposition (CBD) method

    International Nuclear Information System (INIS)

    Dhawale, D.S.; More, A.M.; Latthe, S.S.; Rajpure, K.Y.; Lokhande, C.D.

    2008-01-01

    A chemical synthesis process for the fabrication of CdO nanowires is described. In the present work, transparent and conductive CdO films were synthesized on the glass substrate using chemical bath deposition (CBD) at room temperature. These films were annealed in air at 623 K and characterized for the structural, morphological, optical and electrical properties were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical and electrical resistivity. The XRD analysis showed that the as-deposited amorphous can be converted in to polycrystalline after annealing. Annealed CdO nanowires are 60-65 nm in diameter and length ranges typically from 2.5 to 3 μm. The optical properties revealed the presence of direct and indirect band gaps with energies 2.42 and 2.04 eV, respectively. Electrical resistivity measurement showed semiconducting behavior and thermoemf measurement showed n-type electrical conductivity

  17. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    International Nuclear Information System (INIS)

    Kagan, Harris; Gan, K.K.; Kass, Richard

    2009-01-01

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  18. Metalorganic chemical vapor deposition and characterization of ZnO materials

    Science.gov (United States)

    Sun, Shangzu; Tompa, Gary S.; Hoerman, Brent; Look, David C.; Claflin, Bruce B.; Rice, Catherine E.; Masaun, Puneet

    2006-04-01

    Zinc oxide is attracting growing interest for potential applications in electronics, optoelectronics, photonics, and chemical and biochemical sensing, among other applications. We report herein our efforts in the growth and characterization of p- and n-type ZnO materials by metalorganic chemical vapor deposition (MOCVD), focusing on recent nitrogen-doped films grown using diethyl zinc as the zinc precursor and nitric oxide (NO) as the dopant. Characterization results, including resistivity, Hall measurements, photoluminescence, and SIMS, are reported and discussed. Electrical behavior was observed to be dependent on illumination, atmosphere, and heat treatment, especially for p-type material.

  19. Fabrication of cuprous chloride films on copper substrate by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Ting; Ci, Ji-Wei; Tu, Wei-Chen [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Lan, Shan-Ming [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Shen, Chin-Chang; Wu, Chih-Hung [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China)

    2015-09-30

    Polycrystalline CuCl films were fabricated by chemical bath deposition (CBD) on a Cu substrate at a low solution temperature of 90 °C. Continuous CuCl films were prepared using the copper (II) chloride (CuCl{sub 2}) compound as the precursor for both the Cu{sup 2+} and Cl{sup −} sources, together with repeated HCl dip treatments. An HCl dip pretreatment of the substrate favored the nucleation of CuCl crystallites. Further, interrupting the film deposition and including an HCl dip treatment of the film growth surface facilitated the deposition of a full-coverage CuCl film. A dual beam (FIB/SEM) system with energy dispersive spectrometry facilities attached revealed a homogeneous CuCl layer with a flat-top surface and an average thickness of about 1 μm. Both the excitonic and biexcitonic emission lines were well-resolved in the 6.4 K photoluminescence spectra. In particular, the free exciton emission line was observable at room temperature, indicating the good quality of the CuCl films prepared by CBD. - Highlights: • Cuprous chloride (CuCl) was prepared on Cu substrate by chemical bath deposition. • HCl dip treatments facilitated the deposition of a full-coverage CuCl film. • A homogeneous elemental distribution was recognized for the deposited CuCl layer. • Excitonic and biexcitonic photoluminescence lines of CuCl films were well-resolved. • The free exciton emission line of CuCl films was observable at room temperature.

  20. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

    2015-01-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  1. Chemical Controls of Ozone Dry Deposition to the Sea Surface Microlayer

    Science.gov (United States)

    Carpenter, L.; Chance, R.; Tinel, L.; Saint, A.; Sherwen, T.; Loades, D.; Evans, M. J.; Boxhall, P.; Hamilton, J.; Stolle, C.; Wurl, O.; Ribas-Ribas, M.; Pereira, R.

    2017-12-01

    Oceanic dry deposition of atmospheric ozone (O3) is both the largest and most uncertain O3 depositional sink, and is widely acknowledged to be controlled largely by chemical reactions in the sea surface microlayer (SML) involving iodide (I-) and dissolved organic material (DOM). These reactions not only determine how quickly O3 can be removed from the atmosphere, but also result in emissions of trace gases including volatile organic compounds and may constitute a source of secondary organic aerosols to the marine atmosphere. Iodide concentrations at the sea surface vary by approximately an order of magnitude spatially, leading to more than fivefold variation in ozone deposition velocities (and volatile iodine fluxes). Sea-surface temperature is a reasonable predictor of [I-], however two recent parameterisations for surface I- differ by a factor of two at low latitudes. The nature and reactivity of marine DOM to O3 is almost completely unknown, although studies have suggested approximately equivalent chemical control of I- and DOM on ozone deposition. Here we present substantial new measurements of oceanic I- in both bulk seawater and the overlying SML, and show improved estimates of the global sea surface iodide distribution. We also present analyses of water-soluble DOM isolated from the SML and bulk seawater, and corresponding laboratory studies of ozone uptake to bulk and SML seawater, with the aim of characterizing the reactivity of O3 towards marine DOM.

  2. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  3. Laser-induced chemical liquid deposition of discontinuous and continuous copper films

    Czech Academy of Sciences Publication Activity Database

    Ouchi, A.; Bastl, Zdeněk; Boháček, Jaroslav; Šubrt, Jan; Pola, Josef

    2007-01-01

    Roč. 201, č. 8 (2007), s. 4728-4733 ISSN 0257-8972 R&D Projects: GA AV ČR 1ET400400413 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z40320502; CEZ:AV0Z40720504 Keywords : copper films * laser photolysis * Cu(II) acetylacetonate * chemical liquid deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.678, year: 2007

  4. Electronic and Mechanical Properties of GrapheneGermanium Interfaces Grown by Chemical Vapor Deposition

    Science.gov (United States)

    2015-10-27

    that graphene acts as a diffusion barrier to ambient contaminants, as similarly prepared bare Ge exposed to ambient conditions possesses a much...in-plane order underneath the graphene (Figure 1b,f). The stabilization of Ge terraces with half-step heights indicates that the graphene modifies the...Electronic and Mechanical Properties of Graphene −Germanium Interfaces Grown by Chemical Vapor Deposition Brian Kiraly,†,‡ Robert M. Jacobberger

  5. Characterization for rbs of layers de grown cdznse for chemical deposition (cbd)

    International Nuclear Information System (INIS)

    Pedrero, E.; Larramendi, E.; Calzadilla, O.

    1999-01-01

    Depth and composition of CdZnSe thin films grown by Chemical Bath Deposition were characterized by Rutherford Backscattering Spectrometry. Depth and the relative cuantitity of Se, both decrease when annealed in air. The films have a non-stoichiometric Cd:Zn:Se composition constant from the substrate to the surface , with vacancies of Se. After annealing all the films come up to a similar composition: Cd( Zn 0.2 )Se

  6. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  7. Preparation of potassium tantalate niobate thin films by chemical solution deposition and their characterization

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Železný, Vladimír; Vaněk, Přemysl

    2005-01-01

    Roč. 25, č. 12 (2005), s. 2151-2154 ISSN 0955-2219 R&D Projects: GA ČR GA202/02/0238; GA MŠk(CZ) LN00A028; GA MŠk OC 528.001 Institutional research plan: CEZ:AV0Z40320502 Keywords : films * tantalates * chemical solution deposition Subject RIV: CA - Inorganic Chemistry Impact factor: 1.567, year: 2005

  8. Direct dry transfer of chemical vapor deposition graphene to polymeric substrates

    OpenAIRE

    Fechine, Guilhermino J. M.; Martin-Fernandez, Inigo; Yiapanis, George; de Oliveira, Ricardo V. Bof; Hu, Xiao; Yarovsky, Irene; Neto, Antonio H. Castro; Ozyilmaz, Barbaros

    2014-01-01

    We demonstrate the direct dry transfer of large area Chemical Vapor Deposition graphene to several polymers (low density polyethylene, high density polyethylene, polystyrene, polylactide acid and poly(vinylidenefluoride-co-trifluoroethylene) by means of only moderate heat and pressure, and the later mechanical peeling of the original graphene substrate. Simulations of the graphene-polymer interactions, rheological tests and graphene transfer at various experimental conditions show that contro...

  9. Chemically vapor-deposited tungsten: its high temperature strength and ductility

    International Nuclear Information System (INIS)

    Bryant, W.A.

    1977-01-01

    The high temperature tensile ductility (as measured by total elongation normal to the growth direction) of chemically vapor-deposited tungsten was found to be significantly greater than previously reported. A correlation was found between ductility and void content. However, voids were found to have essentially no effect on the high temperature strength of this material, which is considerably weaker than powder metallurgy tungsten. (Auth.)

  10. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  11. Mathematical Calculations Of Heat Transfer For The CNC Deposition Platform Based On Chemical Thermal Method

    Science.gov (United States)

    Essa, Mohammed Sh.; Chiad, Bahaa T.; Hussein, Khalil A.

    2018-05-01

    Chemical thermal deposition techniques are highly depending on deposition platform temperature as well as surface substrate temperatures, so in this research thermal distribution and heat transfer was calculated to optimize the deposition platform temperature distribution, determine the power required for the heating element, to improve thermal homogeneity. Furthermore, calculate the dissipated thermal power from the deposition platform. Moreover, the thermal imager (thermal camera) was used to estimate the thermal destitution in addition to, the temperature allocation over 400cm2 heated plate area. In order to reach a plate temperature at 500 oC, a plate supported with an electrical heater of power (2000 W). Stainless steel plate of 12mm thickness was used as a heated plate and deposition platform and subjected to lab tests using element analyzer X-ray fluorescence system (XRF) to check its elemental composition and found the grade of stainless steel and found to be 316 L. The total heat losses calculated at this temperature was 612 W. Homemade heating element was used to heat the plate and can reach 450 oC with less than 15 min as recorded from the system.as well as the temperatures recorded and monitored using Arduino/UNO microcontroller with cold-junction-compensated K-thermocouple-to-digital converter type MAX6675.

  12. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

    2007-01-01

    The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH 3 species, and lower k is shown to correlate with increased concentration of Si-CH 3 . NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH x ) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH x ) content and the presence of C=O and C=C functional groups

  13. Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

    Science.gov (United States)

    Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

    1994-01-01

    Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

  14. Computer Simulation of Temperature Parameter for Diamond Formation by Using Hot-Filament Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Chang Weon Song

    2017-12-01

    Full Text Available To optimize the deposition parameters of diamond films, the temperature, pressure, and distance between the filament and the susceptor need to be considered. However, it is difficult to precisely measure and predict the filament and susceptor temperature in relation to the applied power in a hot filament chemical vapor deposition (HF-CVD system. In this study, the temperature distribution inside the system was numerically calculated for the applied powers of 12, 14, 16, and 18 kW. The applied power needed to achieve the appropriate temperature at a constant pressure and other conditions was deduced, and applied to actual experimental depositions. The numerical simulation was conducted using the commercial computational fluent dynamics software ANSYS-FLUENT. To account for radiative heat-transfer in the HF-CVD reactor, the discrete ordinate (DO model was used. The temperatures of the filament surface and the susceptor at different power levels were predicted to be 2512–2802 K and 1076–1198 K, respectively. Based on the numerical calculations, experiments were performed. The simulated temperatures for the filament surface were in good agreement with the experimental temperatures measured using a two-color pyrometer. The results showed that the highest deposition rate and the lowest deposition of non-diamond was obtained at a power of 16 kW.

  15. Study of the fluidized bed chemical vapor deposition process on very dense powder for nuclear applications

    International Nuclear Information System (INIS)

    Vanni, Florence

    2015-01-01

    This thesis is part of the development of low-enriched nuclear fuel, for the Materials Test Reactors (MTRs), constituted of uranium-molybdenum particles mixed with an aluminum matrix. Under certain conditions under irradiations, the U(Mo) particles interact with the aluminum matrix, causing unacceptable swelling of the fuel plate. To inhibit this phenomenon, one solution consists in depositing on the surface of the U(Mo) particles, a thin silicon layer to create a barrier effect. This thesis has concerned the study of the fluidized bed chemical vapor deposition (CVD) process to deposit silicon from silane, on the U(Mo) powder, which has an exceptional density of 17,500 kg/m 3 . To achieve this goal, two axes were treated during the thesis: the study and the optimization of the fluidization of a so dense powder, and then those of the silicon deposition process. For the first axis, a series of tests was performed on a surrogate tungsten powder in different columns made of glass and made of steel with internal diameters ranging from 2 to 5 cm, at room temperature and at high temperature (650 C) close to that of the deposits. These experiments helped to identify wall effects phenomena within the fluidized bed, which can lead to heterogeneous deposits or particles agglomeration. Some dimensions of the fluidization columns and operating conditions allowing a satisfactory fluidization of the powder were identified, paving the way for the study of silicon deposition. Several campaigns of deposition experiments on the surrogate powder and then on the U(Mo) powder were carried out in the second axis of the study. The influence of the bed temperature, the inlet molar fraction of silane diluted in argon, and the total gas flow of fluidization, was examined for different diameters of reactor and for various masses of powder. Morphological and structural characterization analyses (SEM, XRD..) revealed a uniform silicon deposition on all the powder and around each particle

  16. A predictive model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system

    Energy Technology Data Exchange (ETDEWEB)

    Toprac, A.J.; Trachtenberg, I.; Edgar, T.F. (Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering)

    1994-06-01

    The chemical vapor deposition of polysilicon from thermally activated silane in a cold wall, single-wafer rapid thermal system was studied by experimentation at a variety of low pressure conditions, including very high temperatures. The effect of diluent gas on polysilicon deposition rates was examined using hydrogen, helium, and krypton. A mass-transfer model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system was developed. This model was used to produce an empirical rate expression for silicon deposition from silane by regressing kinetic parameters to fit experimental data. The resulting model provided accurate predictions over widely varying conditions in the experimental data.

  17. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  18. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  19. Chemical Vapor Deposition of Photocatalyst Nanoparticles on PVDF Membranes for Advanced Oxidation Processes

    Directory of Open Access Journals (Sweden)

    Giovanni De Filpo

    2018-06-01

    Full Text Available The chemical binding of photocatalytic materials, such as TiO2 and ZnO nanoparticles, onto porous polymer membranes requires a series of chemical reactions and long purification processes, which often result in small amounts of trapped nanoparticles with reduced photocatalytic activity. In this work, a chemical vapor deposition technique was investigated in order to allow the nucleation and growth of ZnO and TiO2 nanoparticles onto polyvinylidene difluoride (PVDF porous membranes for application in advanced oxidation processes. The thickness of obtained surface coatings by sputtered nanoparticles was found to depend on process conditions. The photocatalytic efficiency of sputtered membranes was tested against both a model drug and a model organic pollutant in a small continuous flow reactor.

  20. SiO2 coating of silver nanoparticles by photoinduced chemical vapor deposition

    International Nuclear Information System (INIS)

    Boies, Adam M; Girshick, Steven L; Roberts, Jeffrey T; Zhang Bin; Nakamura, Toshitaka; Mochizuki, Amane

    2009-01-01

    Gas-phase silver nanoparticles were coated with silicon dioxide (SiO 2 ) by photoinduced chemical vapor deposition (photo-CVD). Silver nanoparticles, produced by inert gas condensation, and a SiO 2 precursor, tetraethylorthosilicate (TEOS), were exposed to vacuum ultraviolet (VUV) radiation at atmospheric pressure and varying temperatures. The VUV photons dissociate the TEOS precursor, initiating a chemical reaction that forms SiO 2 coatings on the particle surfaces. Coating thicknesses were measured for a variety of operation parameters using tandem differential mobility analysis and transmission electron microscopy. The chemical composition of the particle coatings was analyzed using energy dispersive x-ray spectrometry and Fourier transform infrared spectroscopy. The highest purity films were produced at 300-400 0 C with low flow rates of additional oxygen. The photo-CVD coating technique was shown to effectively coat nanoparticles and limit core particle agglomeration at concentrations up to 10 7 particles cm -3 .