WorldWideScience

Sample records for chemically deposited solar

  1. Chemically Deposited Thin-Film Solar Cell Materials

    Science.gov (United States)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  2. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  3. Properties of Plasma Enhanced Chemical Vapor Deposition Barrier Coatings and Encapsulated Polymer Solar Cells

    International Nuclear Information System (INIS)

    In this paper, we report silicon oxide coatings deposited by plasma enhanced chemical vapor deposition technology (PECVD) on 125 μm polyethyleneterephthalate (PET) surfaces for the purpose of the shelf lifetime extension of sealed polymer solar cells. After optimization of the processing parameters, we achieved a water vapor transmission rate (WVTR) of ca. 10−3 g/m2/day with the oxygen transmission rate (OTR) less than 0.05 cc/m2/day, and succeeded in extending the shelf lifetime to about 400 h in encapsulated solar cells. And then the chemical structure of coatings related to the properties of encapsulated cell was investigated in detail. (plasma technology)

  4. Fabrication of efficient planar perovskite solar cells using a one-step chemical vapor deposition method

    OpenAIRE

    Mohammad Mahdi Tavakoli; Leilei Gu; Yuan Gao; Claas Reckmeier; Jin He; Rogach, Andrey L; Yan Yao; Zhiyong Fan

    2015-01-01

    Organometallic trihalide perovskites are promising materials for photovoltaic applications, which have demonstrated a rapid rise in photovoltaic performance in a short period of time. We report a facile one-step method to fabricate planar heterojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conversion efficiency of up to 11.1%. We performed a systematic optimization of CVD parameters such as temperature and growth time to obtain high quality films of CH...

  5. Cu2ZnSn(S,Se)4 solar cells based on chemical bath deposited precursors

    International Nuclear Information System (INIS)

    A low-cost method has been developed to fabricate Cu2ZnSn(S,Se)4 solar cells. By this method, firstly SnS, CuS, and ZnS layers are successively deposited on a molybdenum/soda lime glass (Mo/SLG) substrate by chemical bath deposition. The Cu2ZnSn(S,Se)4 thin films are obtained by annealing the precursor in a selenium atmosphere utilizing a graphite box in the furnace. The obtained Cu2ZnSn(S,Se)4 thin films show large crystalline grains. By optimizing the preparation process, Cu2ZnSn(S,Se)4 solar cells with efficiencies up to 4.5% are obtained. The results imply that the Cu2ZnSn(S,Se)4/CdS interface and the back contact may be limiting factors for solar cell efficiency. - Highlights: • A chemical bath deposition method is developed to prepare Cu2ZnSn(S,Se)4 thin films. • The Cu2ZnSn(S,Se)4 thin films show good crystallization. • Solar cells with efficiencies up to 4.5% can be prepared based on the Cu2ZnSn(S,Se)4 layer. • The limiting factors for the solar cell efficiency are analyzed

  6. Indium sulfide thin films as window layer in chemically deposited solar cells

    International Nuclear Information System (INIS)

    Indium sulfide (In2S3) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO3)3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In2S3. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In2S3 thin films are photosensitive with an electrical conductivity value in the range of 10−3–10−7 (Ω cm)−1, depending on the film preparation conditions. We have demonstrated that the In2S3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO2:F/In2S3/Sb2S3/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm2. - Highlights: • In2S3 thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In2S3 films. • We made chemically deposited solar cells using the In2S3 thin films

  7. Integration of polymer electrolytes in dye sensitized solar cells by initiated chemical vapor deposition

    International Nuclear Information System (INIS)

    The mesoporous titanium dioxide electrode of dye sensitized solar cells (DSSC) has been successfully filled with polymer electrolyte to replace the conventional liquid electrolyte. Polymer electrolyte was directly synthesized and deposited using the initiated chemical vapor deposition (iCVD) process, and an iodide-triiodide redox couple in different redox solvents was then incorporated into the polymer. We have investigated different candidate polymer electrolytes, including poly(2-hydroxyethyl methacrylate) (PHEMA). The open circuit voltage of cells fabricated with iCVD PHEMA was found to be higher when compared with a liquid electrolyte that is attributed to a lower rate of electron recombination.

  8. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    Science.gov (United States)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  9. All-chemically deposited Bi2S3/PbS solar cells

    International Nuclear Information System (INIS)

    We report on solar cells with a cross-sectional layout: TCO/window/Bi2S3/PbS, in which a commercial SnO2 transparent conductive oxide (TCO-PPG Sungate 500); chemically deposited window layers of CdS, ZnS or their oxides; n-type Bi2S3 (100 nm) and p-type PbS (360-550 nm) absorber films constitute the cell structures. The crystalline structure, optical, and electrical properties of the constituent films are presented. The open circuit voltage (Voc) and short-circuit current density (Jsc), for 1000 W/m2 solar radiation, of these solar cells depend on the window layers, and vary in the range, 130-310 mV and 0.5-5 mA/cm2, respectively. The typical fill factors (FF) of these cells are 0.25-0.42, and conversion efficiency, 0.1-0.4%.

  10. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  11. Chemically vapor-deposited ZrB2 as a selective solar absorber

    International Nuclear Information System (INIS)

    Coatings of ZrB2 and TiB2 for photothermal solar absorber applications were prepared using chemical vapor deposition (CVD) techniques. Oxidation tests suggest a maximum temperature limit for air exposure of 600 K for TiB2 and 800 K for ZrB2. Both materials exhibit innate spectral selectivity with an emittance at 375 K ranging from 0.06 to 0.09, a solar absorptance for ZrB2 ranging from 0.67 to 0.77 and a solar absorptance for TiB2 ranging from 0.46 to 0.59. ZrB2 has better solar selectivity and more desirable oxidation behavior than TiB2. A 0.071 μm antireflection coating of Si3N4 deposited onto the ZrB2 coating leads to an increase in absorptance from 0.77 to 0.93, while the emittance remains unchanged. (Auth.)

  12. Thin film cadmium telluride solar cells by two chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.

    1988-01-15

    Cadmium telluride (CdTe) has long been recognized as a promising thin film photovoltaic material. In this work, polycrystalline p-CdTe films have been deposited by two chemical vapor deposition techniques, namely the combination of vapors of elements (CVE) and close-spaced sublimation (CSS). The CVE technique is more flexible in controlling the composition of deposited films while the CSS technique can provide very high deposition rates. The resistivity of p-CdTe films deposited by the CVE and CSS techniques can be controlled by intrinsic (cadmium vacancies) or extrinsic (arsenic or antimony) doping, and the lowest resistivity obtainable is about 200 ..cap omega.. cm. Both front-wall (CdTe/TCS/glass) and back-wall (TCS/CdTe/substrate) cells have been prepared. The back-wall cells are less efficient because of the high and irreproducible p-CdTe-substrate interface resistance. The CSS technique is superior to the CVE technique because of its simplicity and high deposition rates; however, the cleaning of the substrate in situ is more difficult. The interface cleanliness is an important factor determining the electrical and photovoltaic characteristics of the heterojunction. Heterojunction CdS/CdTe solar cells of area 1 cm/sup 2/ with conversion efficiencies higher than 10% have been prepared and junction properties characterized.

  13. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. PMID:27442970

  14. Investigation of metalorganic chemical vapor deposition grown CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sudharsanan, R.; Rohatgi, A. (Georgia Inst. of Tech., Atlanta (USA). School of Electrical Engineering)

    1991-03-01

    Polycrystalline CdTe films were grown on CdS/SnO{sub 2}/glass substrates by metalorganic chemical vapor deposition (MOCVD) for solar cell applications. Cells fabricated on these films showed efficiency of 9.7% which is the highest efficiency reported so far for MOCVD grown CdTe solar cells. The bias-dependent spectral response of the 9.7% efficient cell showed an external quantum efficiency greater than 0.85 at zero bias but a significant wavelength-independent reduction in spectral response at higher voltages. The interface recombination model was used to calculate the interface collection function term to quantify the open-circuit voltage (V{sub oc}) and fill factor losses in the high efficiency cell. It was found that the interface recombination reduces the V{sub oc} and fill factor by 60 mV and 0.1 respectively. It was estimated that efficiency as high as 13.5% can be achieved by improving CdTe/CdS interface quality. (orig.).

  15. Chemical deposition methods for Cd-free buffer layers in CI(G)S solar cells: Role of window layers

    International Nuclear Information System (INIS)

    It is currently possible to prepare Cd-free Cu(In,Ga)Se2-based solar cells with efficiencies similar or higher than their CdS references. In these cells, higher efficiencies are generally obtained from soft chemical-based techniques giving conformal depositions such as chemical bath deposition (CBD), ion layer gas reaction (ILGAR) or atomic layer deposition (ALD). However most of these devices are characterized by their pronounced transient behaviour. The aim of this paper is to compare these different chemical-based methods (CBD, ALD, ILGAR...) and to try to provide evidence for the dominant influence of the interface between the Cd-free buffer layer and the window layer on the performance and on the metastable electronic behaviour of these solar cells.

  16. Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)

    OpenAIRE

    Villar, Fernando; Antony, Aldrin; Escarré i Palou, Jordi; Ibarz, D.; Roldán, Rubén; Stella, Marco; Muñoz Ramos, David; Asensi López, José Miguel; Bertomeu i Balagueró, Joan

    2009-01-01

    Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the...

  17. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  18. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-06-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  19. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Nouhi, A.; Stirn, R.J.; Meyers, P.V.; Liu, C.H.

    1989-05-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9% have been demonstrated. I--V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd/sub 0.85/Mn/sub 0.15/Te in place of CdTe as an i layer.

  20. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  1. Deposition of Lead Sulfide Nanostructure Films on TiO2 Surface via Different Chemical Methods due to Improving Dye-Sensitized Solar Cells Efficiency

    International Nuclear Information System (INIS)

    Graphical abstract: Display Omitted -- Highlights: • TiO2 surface was fabricated by electrophoresis deposition method. • PbS nanostructure layers were deposited on the TiO2 surface via different chemical methods. • The effects of chemical deposition methods on the optical properties of fabricated surfaces were studied. • Dye-sensitized solar cells (DSSCs) were made with the fabricated TiO2/PbS surfaces. • The effects of different deposition methods on DSSC performance were investigated. -- Abstract: In this work TiO2 P25 was deposited successfully on the FTO glass by electrophoresis method. Different chemical methods were served for deposition of nanosized PbS such as chemical bath deposition (CBD) and successive ion layer adsorption and reaction (SILAR). Also in this paper, nanosized lead sulfide was successfully deposited on TiO2 surface by hydrothermal (HT) and microwave (MW) methods. Also TiO2/PbS nanocomposite was synthesized via a simple hydrothermal method and deposited on FTO glass by doctor blade (DB) technique. Dye sensitized solar cells were fabricated from prepared electrodes, Pt as counter electrode, dye solution and electrolyte. The effect of chemical deposition methods were investigated on surface quality, optical properties and solar cell efficiency. The observation showed that using different chemical methods for deposition of PbS on TiO2 surface is led to fabrication solar cells with different efficiencies and performances. The electrodes were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), cross-section SEM, UV–vis diffuse reflectance spectroscopy (DRS), energy dispersive X-ray analysis (EDX) spectroscopy, atomic force microscopy (AFM), cyclic voltammetry (CV) and UV–Vis spectroscopy. Dye-sensitized solar cells (DSSC) made by the fabricated electrodes as working electrode and then were investigated by current density-voltage (J-V) curve and electrochemical

  2. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    International Nuclear Information System (INIS)

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  3. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Cd1−xZnxS and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd1−xZnxS coatings were applied onto 15 × 15 cm2 float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd0.36Zn0.64S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd0.36Zn0.64S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd0.36Zn0.64S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells

  4. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  5. Oxidative Chemical Vapor Deposition of Neutral Hole Transporting Polymer for Enhanced Solar Cell Efficiency and Lifetime.

    Science.gov (United States)

    Jo, Won Jun; Nelson, Justin T; Chang, Sehoon; Bulović, Vladimir; Gradečak, Silvija; Strano, Michael S; Gleason, Karen K

    2016-08-01

    The concept of a neutral hole-transporting polymer is realized for the first time, by integrating patterned Cl(-) -doped poly(3,4-dimethoxythiophene) thin films into organic solar cells through a vacuum-based polymer vapor printing technique. Due to this novel polymer's neutrality, high transparency, good conductivity, and appropriate energy levels, the solar-cell efficiency and lifetime are significantly enhanced. PMID:27167214

  6. Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells. Temperature-induced morphological changes

    Energy Technology Data Exchange (ETDEWEB)

    Fay, S.; Kroll, U.; Bucher, C.; Vallat-Sauvain, E.; Shah, A. [Institut de Microtechnique IMT, Thin-film Silicon and Photovoltaics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

    2005-03-31

    Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thin-film silicon solar cells. This paper presents a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below the pressures usually applied for the deposition of this kind of material. A temperature series has been deposited, showing a morphological transition around 150{sup o}C. ZnO samples deposited with temperatures just higher than this transition are constituted of large grains highly oriented along a single crystallographic orientation. These 'monocrystals' lead to low resistivity values, showing a clear correlation between the size of the surface grains and the electrical performance of corresponding films. Additionally, these large grains also yield ZnO layers with high transparency and high light-scattering power, specially suitable for solar cell technology based on thin-film silicon.

  7. Understanding and improving the chemical vapor deposition process for solar grade silicon production

    OpenAIRE

    Ramos Cabal, Alba

    2015-01-01

    Esta Tesis Doctoral se centra en la investigación del proceso de producción de polisilicio para aplicaciones fotovoltaicas (FV) por la vía química; mediante procesos de depósito en fase vapor (CVD). El polisilicio para la industria FV recibe el nombre de silicio de grado solar (SoG Si). Por un lado, el proceso que domina hoy en día la producción de SoG Si está basado en la síntesis, destilación y descomposición de triclorosilano (TCS) en un reactor CVD -denominado reactor Siemens-. El materia...

  8. Preparation and characterization of SnO2 thin film by chemical bath deposition method for solar cell application

    International Nuclear Information System (INIS)

    Full text: Tin oxide thin films were synthesized by chemical bath deposition method on glass substrate .The as-deposited thin films were characterized for compositional, structural, surface morphological, optical and electrical properties. The X-ray diffraction patterns of the sample indicate that all samples are polycrystalline structure. AFM images show that the films consist of small uniform grains and are free of pinholes. (author)

  9. Characterization of CuInS2 thin films prepared by chemical bath deposition and their implementation in a solar cell

    International Nuclear Information System (INIS)

    CuInS2 thin films were formed by the sequential deposition of In2S3–CuS layers on glass substrates, by chemical bath deposition technique, and heating these multilayer 1 h at 350 °C and 400 mPa. The morphology and thickness of the CuInS2 thin films were analysed by scanning electron microscopy, showing particles with elongated shape and length about 40 nm, and thickness of 267 and 348 nm for samples from 15 and 24 h of deposition time in the chemical bath of In2S3, respectively. The energy band gap values of the films were around 1.4 eV, whereas the electrical conductivity showed values from 64.91 to 4.11 × 10−3 Ω−1 cm−1 for the samples of 15 and 24 h of In2S3 deposition bath, respectively. The obtained CuInS2 films showed appropriate values for their application as an absorbing layer in photovoltaic structures of the type: glass/SnO2:F/CdS/Sb2S3/CuInS2/PbS/C/Ag. The whole structure was obtained through chemical bath deposition technique. The solar cell corresponding to 15 h of In2S3 deposition duration bath showed energy-conversion efficiency (η) of 0.53% with open circuit voltage (Voc) of 530 mV, short circuit current density (Jsc) of 2.43 mA cm−2, and fill factor (FF) of 0.41. In the case of the structure with 24 h of deposition of In2S3 bath, η = 0.43% was measured with the following parameters: Voc = 330 mV, Jsc = 4.78 mA cm−2 and FF = 0.27. - Highlights: • CuInS2 films were formed by chemical bath deposition followed by a heat treatment. • Prepared CuInS2 thin films can work as an effective absorbing layer in a solar cell. • A complete solar cell structure was made by a chemical bath deposition method

  10. Characterization of CuInS{sub 2} thin films prepared by chemical bath deposition and their implementation in a solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lugo, S.; López, I. [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Peña, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Calixto, M. [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, C.P. 62580, Temixco, Morelos, México (Mexico); Hernández, T. [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Messina, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo”, S/N C.P. 63155, Tepic, Nayarit, México (Mexico); and others

    2014-10-31

    CuInS{sub 2} thin films were formed by the sequential deposition of In{sub 2}S{sub 3}–CuS layers on glass substrates, by chemical bath deposition technique, and heating these multilayer 1 h at 350 °C and 400 mPa. The morphology and thickness of the CuInS{sub 2} thin films were analysed by scanning electron microscopy, showing particles with elongated shape and length about 40 nm, and thickness of 267 and 348 nm for samples from 15 and 24 h of deposition time in the chemical bath of In{sub 2}S{sub 3}, respectively. The energy band gap values of the films were around 1.4 eV, whereas the electrical conductivity showed values from 64.91 to 4.11 × 10{sup −3} Ω{sup −1} cm{sup −1} for the samples of 15 and 24 h of In{sub 2}S{sub 3} deposition bath, respectively. The obtained CuInS{sub 2} films showed appropriate values for their application as an absorbing layer in photovoltaic structures of the type: glass/SnO{sub 2}:F/CdS/Sb{sub 2}S{sub 3}/CuInS{sub 2}/PbS/C/Ag. The whole structure was obtained through chemical bath deposition technique. The solar cell corresponding to 15 h of In{sub 2}S{sub 3} deposition duration bath showed energy-conversion efficiency (η) of 0.53% with open circuit voltage (V{sub oc}) of 530 mV, short circuit current density (J{sub sc}) of 2.43 mA cm{sup −2}, and fill factor (FF) of 0.41. In the case of the structure with 24 h of deposition of In{sub 2}S{sub 3} bath, η = 0.43% was measured with the following parameters: V{sub oc} = 330 mV, J{sub sc} = 4.78 mA cm{sup −2} and FF = 0.27. - Highlights: • CuInS{sub 2} films were formed by chemical bath deposition followed by a heat treatment. • Prepared CuInS{sub 2} thin films can work as an effective absorbing layer in a solar cell. • A complete solar cell structure was made by a chemical bath deposition method.

  11. Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS sub 2 thin film solar cells

    CERN Document Server

    Kaufmann, C A

    2002-01-01

    different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS sub 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) sub x S sub y or In(OH,O) sub x S sub y. In the case of In(OH,O) sub x S sub y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell characteristics could be developed. A CulnS sub 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS sub 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering...

  12. Sonication-assisted sequential chemical bath deposition of CdS nanoparticles into TiO2 nanotube arrays for application in solar cells

    International Nuclear Information System (INIS)

    Highlights: ► CdS sensitized TNTAs photoanode were prepared by sonication-assisted CBD approach. ► Sonication-assisted CBD (SSCBD) prevents CdS aggregating at the top of TNTAs. ► SSCBD promote the deposition quantity of nanoparticles into the TNTAs effectively. ► Compared with classical CBD, S-CdS/TNTAs cells exhibit an increase of η by 65.8%. - Abstract: CdS nanoparticles sensitized TiO2 nanotube arrays photoanode for semiconductors sensitized solar cells (SSSCs) were prepared by sonication-assisted sequential chemical bath deposition (SSCBD) approach and labeled as S-CdS/TNTAs. The S-CdS/TNTAs solar cell was assembled into a typical sandwich structure with backside illumination. Short-circuit current density (Jsc), open circuit potential (Voc), fill factor (FF) and power conversion efficiency (PCE) of the cells under AM 1.5 irradiation were about 4.16 mA cm−2, 446 mV, 43.9% and 0.814%, respectively. Compared with classical sequential chemical bath deposition (SCBD), SSCBD process could effectively prevent CdS nanoparticles aggregating at the top surface of TNTAs and resulted in an increase of PCE by 65.8%. Increased performance of S-CdS/TNTAs solar cell may be attributed to the more efficient charge-transfer process and the lower charge recombination, as evidenced from FESEM and electrochemical impedance spectroscopy (EIS).

  13. Inline atmospheric pressure metal-organic chemical vapour deposition for thin film CdTe solar cells

    International Nuclear Information System (INIS)

    A detailed study has been undertaken to assess the deposition of CdTe for thin film devices via an inline atmospheric pressure metal-organic chemical vapour deposition (AP-MOCVD) reactor. The precursors for CdTe synthesis were released from a showerhead assembly normal to a transparent conductive oxide (TCO)/glass substrate, previously coated with a CdZnS window layer using a conventional batch AP-MOCVD reactor with horizontal flow delivery. Under a simulated illumination with air mass coefficient 1.5 (AM1.5), the initial best cell conversion efficiency (11.2%) for such hybrid cells was comparable to a reference device efficiency (∼ 13%), grown entirely in the AP-MOCVD batch reactor. The performance and structure of the hybrid and conventional devices are compared for spectral response, CdTe grain morphology and crystal structure. These preliminary results reported on the transfer from a batch to an inline AP-MOCVD reactor which holds a good potential for the large-scale production of thin film photovoltaics devices and related materials. - Highlights: • Inline metal-organic chemical vapour deposition (MOCVD) used to grow CdTe films • Desired dopant profiles in CdTe:As achieved with inline MOCVD reactor • Initial conversion efficiency of 11.2% was comparable to batch devices (∼ 13%). • Inline MOCVD holds a good potential for large-scale thin film photovoltaics production

  14. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  15. Improving low pressure chemical vapor deposited zinc oxide contacts for thin film silicon solar cells by using rough glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Steinhauser, J., E-mail: jerome.steinhauser@oerlikon.com; Boucher, J.-F.; Omnes, E.; Borrello, D.; Vallat-Sauvain, E.; Monteduro, G.; Marmelo, M.; Orhan, J.-B.; Wolf, B.; Bailat, J.; Benagli, S.; Meier, J.; Kroll, U.

    2011-12-01

    Compared to zinc oxide grown (ZnO) on flat glass, rough etched glass substrates decrease the sheet resistance (R{sub sq}) of zinc oxide layers grown on it. We explain this R{sub sq} reduction from a higher thickness and an improved electron mobility for ZnO layers deposited on rough etched glass substrates. When using this etched glass substrate, we also obtain a large variety of surface texture by changing the thickness of the ZnO layer grown on it. This new combination of etched glass and ZnO layer shows improved light trapping potential compared to ZnO films grown on flat glass. With this new approach, Micromorph thin film silicon tandem solar cells with high total current densities (sum of the top and bottom cell current density) of up to 26.8 mA cm{sup -2} were fabricated.

  16. Ammonia-free chemical bath deposition of nanocrystalline ZnS thin film buffer layer for solar cells

    International Nuclear Information System (INIS)

    In this work, we prepared zinc sulfide thin films on glass substrates by ammonia-free chemical bath deposition method using thioacetamide as the sulfide source and Ethylene Diamine Tetra Acetic Acid disodium salt as the complexing agent in a solution of pH = 6.0. Thin films of ZnS with different thicknesses of 18-450 nm were prepared. The effect of film thickness and annealing temperature in atmospheric air, on optical properties, band gap energy and grain size of nanocrystals were studied. The X-ray diffraction analysis showed a cubic zinc blend structure and a diameter of about 2-5 nm for ZnS nanocrystals. The Fourier Transform Infrared spectrum of films revealed no peaks due to impurities. The as-deposited ZnS films had more than 70% transmittance in the visible region. The direct band gap of as-deposited films ranged from 3.68 to 3.78 eV and those of annealed films varied from 3.60 to 3.70 eV

  17. Solar chemical heat pipe

    International Nuclear Information System (INIS)

    The performance of a solar chemical heat pipe was studied using CO2 reforming of methane as a vehicle for storage and transport of solar energy. The endothermic reforming reaction was carried out in an Inconel reactor, packed with a Rh catalyst. The reactor was suspended in an insulated box receiver which was placed in the focal plane of the Schaeffer Solar Furnace of the Weizman Institute of Science. The exothermic methanation reaction was run in a 6-stage adiabatic reactor filled with the same Rh catalyst. Conversions of over 80% were achieved for both reactions. In the closed loop mode the products from the reformer and from the metanator were compressed into separate storage tanks. The two reactions were run either separately or 'on-line'. The complete process was repeated for over 60 cycles. The overall performance of the closed loop was quite satisfactory and scale-up work is in progress in the Solar Tower. (authors). 35 refs., 2 figs

  18. The physics of plasma-enhanced chemical vapour deposition for large-area coating: industrial application to flat panel displays and solar cells

    International Nuclear Information System (INIS)

    Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates (∼1 m2) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, and electrical engineering, and material science. In such reactive glow discharge plasma slabs, excited at RF frequency (from 13.56 MHz up to ∼100 MHz), the thin-film deposition uniformity is determined by the gas flow distribution, as well as the RF voltage distribution along the electrodes, and by local plasma perturbations at the reactor boundaries. All these aspects can be approached by analytical and numerical modelling. Moreover, the film properties are largely determined by the plasma chemistry involving the neutral radicals contributing to film growth, the effect of ion bombardment, and the formation and trapping of dust triggered by homogeneous nucleation. This paper will review progress in this field, with particular emphasis on modelling developments. (author)

  19. The physics of plasma-enhanced chemical vapour deposition for large-area coating: industrial application to flat panel displays and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Perrin, Jerome [Unaxis-Balzers A.G., Central R and D, PO Box 1000, FL-9496 Balzers (Liechtenstein); Schmitt, Jacques [Unaxis-France S.A., Display Technology, 5 rue Leon Blum, F-91120, Palaiseau (France); Hollenstein, Christoph; Howling, Alan; Sansonnens, Laurent [Centre de Recherche en Physique des Plasmas, Ecole Polytechnique Federale de Lausanne, PPH Ecublens, CH - 1015 Lausanne (Switzerland)

    2000-12-01

    Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates ({approx}1 m{sup 2}) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, and electrical engineering, and material science. In such reactive glow discharge plasma slabs, excited at RF frequency (from 13.56 MHz up to {approx}100 MHz), the thin-film deposition uniformity is determined by the gas flow distribution, as well as the RF voltage distribution along the electrodes, and by local plasma perturbations at the reactor boundaries. All these aspects can be approached by analytical and numerical modelling. Moreover, the film properties are largely determined by the plasma chemistry involving the neutral radicals contributing to film growth, the effect of ion bombardment, and the formation and trapping of dust triggered by homogeneous nucleation. This paper will review progress in this field, with particular emphasis on modelling developments. (author)

  20. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  1. Chemical bath deposition route for the synthesis of ultra-thin CuIn(S,Se){sub 2} based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo, S. [Universidad Autónoma de Nuevo León (UANL), Fac. de Ciencias Químicas, Av. Universidad S/N, Ciudad Universitaria, San Nicolás de Los Garza, Nuevo León C.P. 66451 (Mexico); Sánchez, Y.; Neuschitzer, M.; Xie, H.; Insignares-Cuello, C.; Izquierdo-Roca, V. [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona (Spain); Peña, Y. [Universidad Autónoma de Nuevo León (UANL), Fac. de Ciencias Químicas, Av. Universidad S/N, Ciudad Universitaria, San Nicolás de Los Garza, Nuevo León C.P. 66451 (Mexico); Saucedo, E., E-mail: esaucedo@irec.cat [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona (Spain)

    2015-05-01

    CuIn(S,Se){sub 2} (CISSe) photovoltaic grade thin films are usually grown by expensive vacuum based methods or chemical routes that require highly toxic precursors. In this work, we present the synthesis of CISSe absorbers by a simple chemical bath deposition (CBD) route. In the first step, In{sub 2}S{sub 3}/Cu{sub 2−x}S stack was deposited as a precursor by CBD on Mo-coated soda lime glass substrates, using respectively thioacetamide and N,N′-dimethylthiourea as S source. Then the CISSe thin films were synthesized by the precursor's selenization at 450 °C. The obtained films were characterized by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The tetragonal chalcopyrite structure of CISSe was identified by XRD and Raman, confirming that the major part of S was replaced by Se. SEM images show a compact and homogeneous film and by cross-section the thickness was estimated to be around 700 nm. Solar cells prepared with these absorbers exhibit an open circuit voltage of 369 mV, a short circuit current density of 13.7 mA/cm{sup 2}, a fill factor of 45% and an efficiency of 2.3%. - Highlights: • Deposition of In{sub 2}S{sub 3}/Cu{sub 2−x}S multi-stacks by chemical bath deposition • Synthesis of CuIn(S,Se){sub 2} via a two stage process • Demonstration of the viability of this low cost method to produce photovoltaic grade CuIn(S,Se){sub 2}.

  2. Simple Chemical Vapor Deposition Experiment

    Science.gov (United States)

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  3. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    Science.gov (United States)

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-01

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV). PMID:26855162

  4. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    OpenAIRE

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; J.K. Rath; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted, as well as thin film silicon single junction and multijunction junction solar cells. The application of HW-SiNx at a deposition rate of 3 nm/s to polycrystalline Si wafer solar cells has led to cell...

  5. The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm(sup -3)) were achieved

  6. Solar Chemical Peculiarities?

    CERN Document Server

    Allende-Prieto, C

    2006-01-01

    Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

  7. Chemical and electronic interface structure of spray pyrolysis deposited undoped and Al-doped ZnO thin films on a commercial Cz-Si solar cell substrate

    Energy Technology Data Exchange (ETDEWEB)

    Gabas, M.; Ramos-Barrado, J.R. [Dpto. de Fisica Aplicada I, Lab. de Materiales y Superficies, Universidad de Malaga 29071 Malaga (Spain); Barrett, N.T. [CEA DSM/IRAMIS/SPCSI, CEA Saclay, 91191 Gif sur Yvette (France); Gota, S. [Laboratoire Leon Brillouin, UMR 012 CEA-CNRS CEA Saclay, 91191 Gif sur Yvette (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, CSIC, Americo Vespucio 49, 41092 Sevilla (Spain); Lopez-Escalante, M.C. [Isofoton S.A., Parque Tecnologico de Andalucia, Severo Ochoa, 50, 29590 Malaga (Spain)

    2009-08-15

    We have studied differences in the interface between undoped and Al-doped ZnO thin films deposited on commercial Si solar cell substrates. The undoped ZnO film is significantly thicker than the Al-doped film for the same deposition time. An extended silicate-like interface is present in both samples. Transmission electron microscopy (TEM) and photoelectron spectroscopy (PES) probe the presence of a zinc silicate and several Si oxides in both cases. Although Al doping improves the conductivity of ZnO, we present evidence for Al segregation at the interface during deposition on the Si substrate and suggest the presence of considerable fixed charge near the oxidized Si interface layer. The induced distortion in the valence band, compared to that of undoped ZnO, could be responsible for considerable reduction in the solar cell performance. (author)

  8. Electrical characterization of annealed chemical-bath-deposited CdS films and their application in superstrate configuration CdTe/CdS solar cells

    International Nuclear Information System (INIS)

    Application of chemical-bath-deposited CdS in the superstrate configuration of CdTe/CdS solar cells involving CdCl2:O2 heat treatment of CdTe/CdS structures at about 400 °C is problematic. Namely, the vertical capillary surfaces (grain boundaries) between the columnar CdS grains perform as fast diffusion channels leading to the emergence of short circuits between the absorber and front contact. It was assumed that the grain boundaries contain residual hydroxy-oxide type compounds and form electrical barriers between columnar grains in the lateral direction of the CdS layer and that the electrical methods should be indicative of the behavior of grain boundaries in the annealing process. All samples were characterized by temperature dependence of DC conductivity in a temperature range of 50-300 K, X-ray diffraction, and scanning electron microscope. It has been found that the deeper layers of H2 and N2 annealed CdS preserve residual hydroxide, which released the gas phase in the recrystallization process of the chloride processing and created porosity on the CdTe/CdS interface. - Highlights: • We examine interface of CdS/CdTe structures after chloride heat treatment. • The mechanism of the formation of porosity in the CdS/CdTe interface is suggested. • Chloride heat treatment causes also recrystallization of CdS. • The gap between CdS and CdTe is minimal due to CdO on the grain boundaries of CdS

  9. Chemical-vapor deposition of silicon from silane

    Science.gov (United States)

    Hsu, G. C.; Lutwack, R.; Praturi, A. K.

    1979-01-01

    Report lists tables of standard free-energy change, equilibrium constant, and heat of reaction for chemical vapor deposition (CVD) of silicon from silane over temperature range of 100 to 1000 K. Data indicates silicon CVD may be a commercially economical process for production of silicon for solar arrays and other applications.

  10. Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells

    Science.gov (United States)

    Hossain, Jaker; Ohki, Tatsuya; Ichikawa, Koki; Fujiyama, Kazuhiko; Ueno, Keiji; Fujii, Yasuhiko; Hanajiri, Tatsuro; Shirai, Hajime

    2016-03-01

    Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated in terms of cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature Ts, and substrate dc bias Vs as variables for efficient PEDOT:PSS/crystalline silicon (c-Si) heterojunction solar cells. The high-speed-camera and differential mobility analysis characterizations revealed that the average size and flux of PEDOT:PSS mist depend on f, type of solvent, and Vs. Film deposition occurred when positive Vs was applied to the c-Si substrate at Ts of 30-40 °C, whereas no deposition of films occurred with negative Vs, implying that the film is deposited mainly from negatively charged mist. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrates by adjusting Ts and Vs. The adhesion of CMD PEDOT:PSS film to c-Si was greatly enhanced by applying substrate dc bias Vs compared with that of spin-coated film. The CMD PEDOT:PSS/c-Si heterojunction solar cell devices on textured c-Si(100) in 2 × 2 cm2 exhibited a power conversion efficiency η of 11.0% with better uniformity of the solar cell parameters. Furthermore, η was increased to 12.5% by adding an AR coating layer of molybdenum oxide MoOx formed by CMD. These findings suggest that CMD with negatively charged mist has great potential for the uniform deposition of organic and inorganic materials on textured c-Si substrates by suitably adjusting Ts and Vs.

  11. Use of different Zn precursors for the deposition of Zn(S,O) buffer layers by chemical bath for chalcopyrite based Cd-free thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saez-Araoz, R.; Lux-Steiner, M.C. [Hahn Meitner Institut, Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Ennaoui, A.; Kropp, T.; Veryaeva, E. [Hahn Meitner Institut, Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co. KG, Munich (Germany)

    2008-10-15

    Progress in fabricating Cu(In,Ga)(S,Se){sub 2} (CIGSSe) solar cells with Zn(S,O) buffer layers prepared by chemical bath deposition (CBD) is discussed. The effect of different Zn salt precursors on solar cell device performance is investigated using production scale CIGSSe absorbers provided by AVANCIS GmbH and Co. KG. The CBD process has been developed at the Hahn-Meitner-Institut (HMI) using zinc nitrate, zinc sulphate or zinc chloride as zinc precursor. An average efficiency of 14.2{+-}0.8% is obtained by using one-layer CBD Zn(S,O) The dominant recombination path for well performing solar cells is discussed based on the results obtained from temperature dependent J(V) analysis. The structure and morphology of buffer layers deposited using zinc nitrate and zinc sulphate has been studied by means of transmission electron micrographs of glass/Mo/CIGSSe/Zn(S,O) structures. Results show a conformal coverage of the absorber by a Zn(S,O) layer of 15-25 nm consisting of nanocrystals with radii of {proportional_to}5 nm. XAES analysis of the buffer layer reveals a similar surface composition for buffer layers deposited with zinc nitrate and zinc sulphate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Wet-Chemical Surface Texturing of Sputter-Deposited ZnO:Al Films as Front Electrode for Thin-Film Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Xia Yan

    2015-01-01

    Full Text Available Transparent conductive oxides (TCOs play a major role as the front electrodes of thin-film silicon (Si solar cells, as they can provide optical scattering and hence improved photon absorption inside the devices. In this paper we report on the surface texturing of aluminium-doped zinc oxide (ZnO:Al or AZO films for improved light trapping in thin-film Si solar cells. The AZO films are deposited onto soda-lime glass sheets via pulsed DC magnetron sputtering. Several promising AZO texturing methods are investigated using diluted hydrochloric (HCl and hydrofluoric acid (HF, through a two-step etching process. The developed texturing procedure combines the advantages of the HCl-induced craters and the smaller and jagged—but laterally more uniform—features created by HF etching. In the two-step process, the second etching step further enhances the optical haze, while simultaneously improving the uniformity of the texture features created by the HCl etch. The resulting AZO films show large haze values of above 40%, good scattering into large angles, and a surface angle distribution that is centred at around 30°, which is known from the literature to provide efficient light trapping for thin-film Si solar cells.

  13. CdS films deposited by chemical bath under rotation

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

    2010-08-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  14. CdS films deposited by chemical bath under rotation

    International Nuclear Information System (INIS)

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl2, KOH, NH4NO3 and CS(NH2)2 as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  15. Influence of Triethanolamine on the Chemical Bath Deposited NiS Thin Films

    OpenAIRE

    Anuar Kassim; Ho S. Min; Tan W. Tee; Ngai C. Fei

    2011-01-01

    Problem statement: Recently, many scientists looking for new chalcogenide materials for the solar cell applications. Nowadays, silicon-based solar cell became dominant products in the market. Because of expensive silicon-based solar cells, scientists hope replaces it with cheaper chalcogenide materials. Approach: The binary chalcogenide materials were deposited onto microscope glass slide using simple chemical bath deposition method. Here, we study the influence of complex...

  16. Performance improvement of inverted organic solar cells by adding ultrathin Al2O3 as an electron selective layer and a plasma enhanced chemical vapor deposition of SiOx encapsulating layer

    International Nuclear Information System (INIS)

    In this paper, we report the performance improvement of inverted organic solar cells by adding an ultrathin electron selective layer of Al2O3 prepared between the indium tin oxide (ITO) electrode and the active transport layer through atomic layer deposition (ALD). We evaluated the cell shelf-life after encapsulating with SiOx-coated polyethylene terephthalate, where the SiOx layer was made by plasma enhanced chemical vapor deposition (PECVD). It was found that the devices with ALD Al2O3 have a higher open circuit voltage than those without the ALD Al2O3 layer. Al2O3 deposited on an ITO electrode decreased the work function of ITO. Furthermore, based on the current density–voltage curves of the initial devices showing a pronounced S-shape, we soaked the cells with the ultraviolet (UV) light process. Then we obtained a higher efficiency in these ALD Al2O3 treated devices. With a careful analysis by atomic force microscopic and X-ray photoelectron spectroscopy, we believe that the UV light soaking process affected both ITO and Al2O3. Further, after the encapsulation by PECVD SiOx, our devices achieved a shelf-life of over 500 h for 50% retained cell efficiency. - Highlights: • Atomic layer deposition of Al2O3 improved the property of inverted organic solar cells. • Ultraviolet light soaking affected electrode work function and Al2O3 conductivity. • SiOx coating enveloped cells can achieve a 500 h shelf-life

  17. Paraffin wax deposits and chemical inhibitors

    Energy Technology Data Exchange (ETDEWEB)

    Mendell, J.L.

    1970-01-01

    Solutions to this problem becomes necessary with the advent of extremely deep production, offshore production, and the probability of ocean-floor completions. The reasons for paraffin-wax accumulations are many and difficult to pinpoint. Inhibition of these paraffin deposits appears to be the best solution. Paraffin solvents and inhibitors are as follows: solvents, wetting agents, dispersants, and crystal modifiers. Solvents are effective, but can harm a refinery catalyst and create health hazards. Wetting agents and dispersants comprise the majority of chemicals used as paraffin wax inhibitors. Crystal modifiers are relatively new and may provide the most efficient means of reducing deposition. Evaluations of chemical paraffin inhibitors are outlined. Field test results which consider the various chemicals tested may give satisfactory results in determining which particular chemical can solve the problem of the particular situation. (38 refs.)

  18. Solar technology applications in chemical waste management

    International Nuclear Information System (INIS)

    Using solar energy to destroy waste chemicals and toxic materials has great appeal to environmentalists, industrialists and the public. Using free sunlight to resolve one of the industrial age's most troublesome problems is destruction must demonstrate that it competes favorably with current approaches in economic and environmental areas. This paper provides an environmental and economic analysis of solar applications in chemical waste management

  19. The atmospheric chemical vapour deposition of coatings on glass

    CERN Document Server

    Sanderson, K D

    1996-01-01

    The deposition of thin films of indium oxide, tin doped indium oxide (ITO) and titanium nitride for solar control applications have been investigated by Atmospheric Chemical Vapour Deposition (APCVD). Experimental details of the deposition system and the techniques used to characterise the films are presented. Results from investigations into the deposition parameters, the film microstructure and film material properties are discussed. A range of precursors were investigated for the deposition of indium oxide. The effect of pro-mixing the vaporised precursor with an oxidant source and the deposition temperature has been studied. Polycrystalline In sub 2 O sub 3 films with a resistivity of 1.1 - 3x10 sup - sup 3 OMEGA cm were obtained with ln(thd) sub 3 , oxygen and nitrogen. The growth of ITO films from ln(thd) sub 3 , oxygen and a range of tin dopants is also presented. The effect of the dopant precursor, the doping concentration, deposition temperature and the effect of additives on film growth and microstr...

  20. Solar System chemical abundances corrected for systematics

    OpenAIRE

    Gonzalez, Guillermo

    2014-01-01

    The relative chemical abundances between CI meteorites and the solar photosphere exhibit a significant trend with condensation temperature. A trend with condensation temperature is also seen when the solar photospheric abundances are compared to those of nearby solar twins. We use both these trends to determine the alteration of the elemental abundances of the meteorties and the photosphere by fractionation and calculate a new set of primordial Solar System abundances.

  1. Sounding of the Atmosphere using Broadband Emission Radiometry observations of daytime mesospheric O2(1Δ) 1.27 μm emission and derivation of ozone, atomic oxygen, and solar and chemical energy deposition rates

    Science.gov (United States)

    Mlynczak, Martin G.; Marshall, B. Thomas; Martin-Torres, F. Javier; Russell, James M.; Thompson, R. Earl; Remsberg, Ellis E.; Gordley, Larry L.

    2007-08-01

    We report observations of the daytime O2(1Δ) airglow emission at 1.27 μm recorded by the Sounding of the Atmosphere using Broadband Emission Radiometry (SABER) instrument on the NASA Thermosphere-Ionosphere-Mesosphere Energetics and Dynamics (TIMED) satellite. The measured limb radiances are inverted to yield vertical profiles of the volume emission rate of energy from the O2 molecule. From these emission rates we subsequently derive the mesospheric ozone concentrations using a nonlocal thermodynamic equilibrium (non-LTE) radiative and kinetic model. Rates of energy deposition due to absorption of ultraviolet radiation in the Hartley band of ozone are also derived, independent of knowledge of the ozone abundance and solar irradiances. Atomic oxygen concentrations are obtained from the ozone abundance using photochemical steady state assumptions. Rates of energy deposition due to exothermic chemical reactions are also derived. The data products illustrated here are from a test day (4 July 2002) of SABER Version 1.07 data which are now becoming publicly available. This test day illustrates the high quality of the SABER O2(1Δ) airglow and ozone data and the variety of fundamental science questions to which they can be applied.

  2. Determination of electroless deposition by chemical nickeling

    Directory of Open Access Journals (Sweden)

    M. Badida

    2013-07-01

    Full Text Available Increasing of technical level and reliability of machine products in compliance with the economical and ecological terms belongs to the main trends of the industrial development. During the utilisation of these products there arise their each other contacts and the interaction with the environment. That is the reason for their surface degradation by wear effect, corrosion and other influences. The chemical nickel-plating allows autocatalytic deposition of nickel from water solutions in the form of coherent, technically very profitable coating without usage of external source of electric current. The research was aimed at evaluating the surface changes after chemical nickel-plating at various changes of technological parameters.

  3. Determination of electroless deposition by chemical nickeling

    OpenAIRE

    Badida, M.; M. Gombár; L. Sobotová; J. Kmec

    2013-01-01

    Increasing of technical level and reliability of machine products in compliance with the economical and ecological terms belongs to the main trends of the industrial development. During the utilisation of these products there arise their each other contacts and the interaction with the environment. That is the reason for their surface degradation by wear effect, corrosion and other influences. The chemical nickel-plating allows autocatalytic deposition of nickel from water solutions in the fo...

  4. Chemical Vapour Deposition of Large Area Graphene

    OpenAIRE

    Larsen, Martin Benjamin Barbour Spanget; Bøggild, Peter; Booth, Tim; Jørgensen, Anders Michael

    2015-01-01

    Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, ...

  5. Advanced deposition model for thermal activated chemical vapor deposition

    Science.gov (United States)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  6. Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells

    International Nuclear Information System (INIS)

    The effects of varying the conditions for the chemical bath deposition (CBD) of cadmium sulfide (CdS) layers on CdS/Cu(In,Ga)Se2 (CIGS) hetero-junctions were investigated using photoluminescence (PL), electroluminescence (EL), deep level transient spectroscopy (DLTS), and red-light-illuminated current-voltage (I–V) measurements. We demonstrated that varying CBD-CdS conditions such as the temperature and time influenced the recombination pathways around the CdS/CIGS junction via the formation of different electronic defects, which eventually changed the photovoltaic conversion efficiency. As the CBD-CdS time and temperature were increased, the cell efficiency decreased. PL measurements revealed that this degradation of the cell efficiency was accompanied by increases in the defect-related recombination, which were attributed to the existence of donor defects around CdS/CIGS having an energy level of 0.65 eV below conduction band, as revealed by DLTS. Increasing distortions in the red-light-illuminated I–V characteristics suggested that the related defects might also have played a critical role in metastable changes around the CdS/CIGS junction. Because the CBD-CdS time and temperature were considered to influence the diffusion of impurities into the CIGS surface, the evolution of the efficiency, PL spectra, defect populations, and red-light-illuminated I–V characteristics observed in this work could be attributed to the diffusion of impurities during the CBD-CdS process. - Highlights: • CdS layers were grown by chemical bath deposition (CBD). • The CBD-CdS influenced the efficiency of Cu(In,Ga)Se2 (CIGS) solar cell. • It could be related to slight alteration in carrier recombination around CdS/CIGS. • Photo- and electroluminescence spectra detected those alterations in recombination. • The variation of results could be related to the changes in deep-level defects

  7. Chemical Vapour Deposition of Large Area Graphene

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget

    Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform......, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, and (2) optimize the process of growing high quality graphene in terms of carrier mobility, and crystal...... structure. Optimization of a process for graphene growth on commercially available copper foil is limited by the number of aluminium oxide particles on the surface of the catalyst. By replacing the copper foil with a thin deposited copper film on a SiO2/Si or c-plane sapphire wafer the particles can...

  8. Biocompatibility of chemical-vapour-deposited diamond.

    Science.gov (United States)

    Tang, L; Tsai, C; Gerberich, W W; Kruckeberg, L; Kania, D R

    1995-04-01

    The biocompatibility of chemical-vapour-deposited (CVD) diamond surfaces has been assessed. Our results indicate that CVD diamond is as biocompatible as titanium (Ti) and 316 stainless steel (SS). First, the amount of adsorbed and 'denatured' fibrinogen on CVD diamond was very close to that of Ti and SS. Second, both in vitro and in vivo there appears to be less cellular adhesion and activation on the surface of CVD diamond surfaces compared to Ti and SS. This evident biocompatibility, coupled with the corrosion resistance and notable mechanical integrity of CVD diamond, suggests that diamond-coated surfaces may be highly desirable in a number of biomedical applications. PMID:7654876

  9. In situ chemical vapor deposition growth of carbon nanotubes on hollow CoFe2O4 as an efficient and low cost counter electrode for dye-sensitized solar cells

    Science.gov (United States)

    Yuan, Hong; Jiao, Qingze; Zhang, Shenli; Zhao, Yun; Wu, Qin; Li, Hansheng

    2016-09-01

    The composites of hollow CoFe2O4 and carbon nanotubes (h-CoFe2O4@CNTs) are successfully prepared by using a simple hydrothermal process coupling with the in-situ chemical vapor deposition (CVD) as electrocatalytic materials for counter electrode of dye-sensitized solar cells. The CNTs are uniformly grown on the surface of hollow CoFe2O4 particles verified by X-ray powder diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) measurements. The electrochemical performances of hollow CoFe2O4@CNTs composites are evaluated by the EIS, Tafel polarization and CV measurements, and exhibiting high electrocatalytic performance for the reduction of triiodide. The presence of conductive polypyrrole nanoparticles could further improve the conductivity and catalytic performance of the resultant composites. Controlling the thickness of composites film, the optimum photovoltaic conversion efficiency of 6.55% is obtained, which is comparable to that of the cells fabricated with Pt counter electrode (6.61%). In addition, the composites exhibit a good long-term electrochemical stability in I3-/I- electrolyte.

  10. Chemical bath deposition of photosensitive CdS and CdSe thin films and their conversion to n-type for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nair, M.T.S.; Nair, P.K. [Univ. Nacional Autonoma de Mexico, Morelos (Mexico). Lab. de Energia Solar; Zingaro, R.A.; Meyers, E.A. [Texas A and M Univ., College Station, TX (United States). Dept. of Chemistry

    1995-12-31

    Methods for preparing good quality CdS and CdSe thin films of 0.1--0.7 {micro}m thickness from solutions at 24--50 C containing citratocadmium(II) ions and thiourea (for CdS) or N,N-dimethyl selenourea (for CdSe) are presented. The as prepared CdS thin films are photosensitive showing photo- to dark-conductivity ratio (S) of > 10{sup 6} under AM-2 illumination. Annealing of these films at 400--450 C for a few minutes converts them to n-type through partial conversion of the films to non stoichiometric CdO. In the case of CdSe, such annealing improves the photosensitivity of the films from S = 10 (as prepared) to > 10{sup 7} (after annealing) under AM-2 illumination. Either film can be converted to n-type with dark conductivities of > 1 {Omega}{sup {minus}1} cm{sup {minus}1} and S = 1 to 10 under AM-2 illumination using a post deposition treatment in dilute (0.01--0.05 M) HgCl{sub 2} solution followed by heating at 200 C.

  11. Chemical evolution: A solar system perspective

    Science.gov (United States)

    Oro, J.

    1989-01-01

    During the last three decades major advances were made in the understanding of the formation of carbon compounds in the universe and of the occurrence of processes of chemical evolution in the solar system and beyond. This was made possible by the development of new astronomical techniques and by the exploration of the solar system by means of properly instrumented spacecraft. Some of the major findings made as a result of these observations are summarized.

  12. Chemical Vapor Deposition Of Silicon Carbide

    Science.gov (United States)

    Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

    1993-01-01

    Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

  13. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    Energy Technology Data Exchange (ETDEWEB)

    Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London, WC1H 0AJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London, WC1H 0NN (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS (United Kingdom)

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research. - Graphical abstract: Schematic demonstration of the effect of thermochromic glazing on solar radiation (red arrow represents IR radiation, black arrow represents all other solar radiation). - Highlights: • Vanadium dioxide thin films for energy efficient glazing. • Reviews chemical vapour deposition techniques. • Latest results for thin film deposition for vanadium dioxide.

  14. Chemical characteristics of some major uranium deposits in western USA

    International Nuclear Information System (INIS)

    Multi-element chemical analyses of several thousand samples were retrieved from the US Geological Survey's computerized Rock Analysis Storage System and used to estimate the average abundances of various elements in each of several types of uranium deposits, in altered rocks associated with some of these deposits, and in unmineralized parts of the various host rocks. Deposits for which results are presented include the tabular deposits in the Morrison Formation, Ambrosia Lake district, New Mexico; secondary deposits in the Ambrosia Lake district; tabular deposits in the Morrison Formation of the Henry Mountains, Utah; tabular deposits in the Chinle Formation in Utah and Colorado; roll-type deposits in Tertiary rocks from the Texas Gulf district; roll-type deposits in the Tertiary basins of Wyoming; tabular deposits in the Entrada Sandstone in Colorado; and a vein-type deposit in crystalline rocks of the Front Range of Colorado. Statistical treatment of the data identified elements that were notably more or less abundant in the deposits and altered rocks than in the unmineralized parts of the host rocks. Comparisons of the mean abundances of elements in the deposits show that the chemical composition of roll-type deposits varies greatly even among deposits in the same district. By contrast, the chemical characteristics of tabular deposits display little variation; the Ambrosia Lake tabular deposits and those of the Henry Mountains district are particularly similar. The data place some constraints on the geochemical aspects of genetic models and suggest certain elements as potential prospecting guides

  15. Studying chemical vapor deposition processes with theoretical chemistry

    OpenAIRE

    Pedersen, Henrik; Elliott, Simon D.

    2014-01-01

    In a chemical vapor deposition (CVD) process, a thin film of some material is deposited onto a surface via the chemical reactions of gaseous molecules that contain the atoms needed for the film material. These chemical reactions take place on the surface and in many cases also in the gas phase. To fully understand the chemistry in the process and thereby also have the best starting point for optimizing the process, theoretical chemical modeling is an invaluable tool for providing atomic-scale...

  16. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-08-31

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  17. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    International Nuclear Information System (INIS)

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  18. Scalable route to CH3NH3PbI3 perovskite thin films by aerosol assisted chemical vapour deposition

    OpenAIRE

    Bhachu, D. S.; Scanlon, D. O.; Saban, E. J.; Bronstein, H.; Parkin, I. P.; Carmalt, C. J.; Palgrave, R. G.

    2015-01-01

    Methyl-ammonium lead iodide is the archetypal perovskite solar cell material. Phase pure, compositionally uniform methyl-ammonium lead iodide thin films on large glass substrates were deposited using ambient pressure aerosol assisted chemical vapour deposition. This opens up a route to efficient scale up of hybrid perovskite film growth towards industrial deployment.

  19. Photo-electrochemical studies of chemically deposited nanocrystalline meso-porous n-type TiO2 thin films for dye-sensitized solar cell (DSSC) using simple synthesized azo dye

    Science.gov (United States)

    Ezema, C. G.; Nwanya, A. C.; Ezema, B. E.; Patil, B. H.; Bulakhe, R. N.; Ukoha, P. O.; Lokhande, C. D.; Maaza, Malik; Ezema, Fabian I.

    2016-04-01

    Nanocrystalline titanium dioxide (TiO2) thin films were deposited by successive ionic layer adsorption and reaction method onto fluorine doped tin oxide coated glass substrate at room temperature (300 K). Titanium trichloride and sodium hydroxide were used as cationic and anionic sources, respectively. The as-deposited and annealed films were characterized for structural, morphological, optical, electrical and wettability properties. The photoelectrochemical study of TiO2 sensitized with a laboratory synthesized organic dye (azo) was evaluated in the polyiodide electrolyte at 40 mW cm-2 light illumination intensity. The photovoltaic characteristics show a fill factor of 0.24 and solar conversion efficiency value of 0.032 % for a TiO2 thickness of 0.96 µm as compared to efficiency of 0.014 % for rose Bengal of the same thickness.

  20. Chemical vapor deposition. 1975-1978 (citations from the NTIS Data Base). Report for 1975-78

    Energy Technology Data Exchange (ETDEWEB)

    Cavagnaro, D.M.

    1980-07-01

    This bibliography discusses chemical vapor deposition of carbon, carbides, ceramics, metals, and glasses. Applications of this process include coatings, semiconducting films, laser materials, solar cells, composite fabrication, and nuclear reactor material fabrication. The physical, mechanical, and chemical properties of these coatings are covered. (This updated bibliography contains 246 citations, none of which are new entries to the previous edition.)

  1. Chemical vapor deposition. 1979-June 1980 (citations from the NTIS Data Base). Report for 1979-June 1980

    Energy Technology Data Exchange (ETDEWEB)

    Cavagnaro, D.M.

    1980-07-01

    Research on chemical vapor deposition of carbon, carbides, ceramics, metals, and glasses are cited. Applications of this process include optical coatings, semiconducting films, laser materials, solar cells, composite fabrication, and nuclear reactor material fabrication. The physical, mechanical, and chemical properties of these coatings are covered. (This updated bibliography contains 64 citations, 50 of which are new entries to the previous edition.)

  2. Chemical vapor deposition of graphene single crystals.

    Science.gov (United States)

    Yan, Zheng; Peng, Zhiwei; Tour, James M

    2014-04-15

    As a two-dimensional (2D) sp(2)-bonded carbon allotrope, graphene has attracted enormous interest over the past decade due to its unique properties, such as ultrahigh electron mobility, uniform broadband optical absorption and high tensile strength. In the initial research, graphene was isolated from natural graphite, and limited to small sizes and low yields. Recently developed chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene for various applications. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next critical step of graphene growth relies on the synthesis of large graphene single crystals. In this Account, we first discuss graphene grain boundaries and their influence on graphene's properties. Mechanical and electrical behaviors of CVD-derived polycrystalline graphene are greatly reduced when compared to that of exfoliated graphene. We then review four representative pathways of pretreating Cu substrates to make millimeter-sized monolayer graphene grains: electrochemical polishing and high-pressure annealing of Cu substrate, adding of additional Cu enclosures, melting and resolidfying Cu substrates, and oxygen-rich Cu substrates. Due to these pretreatments, the nucleation site density on Cu substrates is greatly reduced, resulting in hexagonal-shaped graphene grains that show increased grain domain size and comparable electrical properties as to exfoliated graphene. Also, the properties of graphene can be engineered by its shape, thickness and spatial structure. Thus, we further discuss recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings. The fundamental growth mechanism and practical applications of these well-shaped graphene structures should be interesting topics and

  3. Chemical evolution of primitive solar system bodies

    Science.gov (United States)

    Oro, J.; Mills, T.

    1989-01-01

    Observations on organic molecules and compounds containing biogenic elements in the interstellar medium and in the primitive bodies of the solar system are reviewed. The discovery of phosphorus molecular species in dense interstellar clouds, the existence of organic ions in the dust and gas phase of the comas of Comet Halley, and the presence of presolar, deuterium-hydrogen ratios in the amino acids of carbonaceous chondrites are discussed. The relationships between comets, dark asteroids, and carbonaceous chondrites are examined. Also, consideration is given to the chemical evolution of Titan, the primitive earth, and early Mars.

  4. Chemical vapour deposition of metal oxides and phosphides.

    OpenAIRE

    Binions, R.

    2006-01-01

    This thesis investigates the deposition of thin films of main group metal phosphide and main group metal oxide compounds on glass substrates by the use of dual source atmospheric pressure chemical vapour deposition. Binary phosphide systems with tin, germanium, silicon, antimony, copper or boron have been examined. Binary oxide systems of gallium, antimony, tin or niobium have also been investigated. Additionally these systems were deposited on gas sensor substrates and evaluated as metal oxi...

  5. Chemical Vapor Deposition of Silicon from Silane Pyrolysis

    Science.gov (United States)

    Praturi, A. K.; Lutwack, R.; Hsu, G.

    1977-01-01

    The four basic elements in the chemical vapor deposition (CVD) of silicon from silane are analytically treated from a kinetic standpoint. These elements are mass transport of silane, pyrolysis of silane, nucleation of silicon, and silicon crystal growth. Rate expressions that describe the various steps involved in the chemical vapor deposition of silicon were derived from elementary principles. Applications of the rate expressions for modeling and simulation of the silicon CVD are discussed.

  6. Chemical vapor deposition growth. Annual report

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R.P.; Manasevit, H.M.; Johnson, R.E.; Kenty, J.L.; Moudy, L.A.; Simpson, W.I.; Yang, J.J.

    1976-10-01

    The formal objective of the contract is development of CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells. The techniques developed are to be directed toward (1) minimum-cost processing, (2) production of sheet having properties adequate to result in cells with terrestrial array efficiency of 10 percent or more, and (3) eventual scale-up to large-quantity production. (WDM)

  7. Surface chemical studies of chemical vapour deposited diamond thin films

    International Nuclear Information System (INIS)

    Polycrystalime diamond grown by low pressure chemical vapour deposition (CVD) techniques has emerged in recent years as a new material with applications in such areas as optics, electronics, radiation detectors, chemical sensors and electrochemistry. A main aim of this thesis has been to advance current knowledge of the surface chemical properties of CVD diamond to underpin the development of our understanding of the properties and potential applications of this material. Cl2 is found to adsorb dissociatively on the clean, hydrogen-free diamond surface up to sub-monolayer coverage with a sticking probability of ∼1.2x10-3. Adsorption is a non-activated process, and the sticking probability and extent of coverage decreased with increasing temperature. This was shown to contrast with the behaviour found for the interaction of chlorine with the hydrogenated diamond surface where increased sticking probabilities and saturation surface coverages were observed, and where the reactivity also increased with temperature. Thermal desorption of atomic Cl occurred over a broad temperature range m both chemisorption systems, indicating the presence of more than one binding state. Atomic hydrogen was successful in efficiently etching the bound Cl from the surface. XeF2 was found to adsorb dissociatively onto the clean diamond surface to give up to monolayer coverages of F, which formed two distinct binding states. The first state, populated at low coverage, was predominantly covalent in character, while the second state, occurring at high surface coverages, had more ionic bonding character. Pre-hydrogenation of the diamond surface increased the reactive sticking probability observed, but decreased the extent of coverage by blocking reactive sites. The semi-ionic F was readily etched by atomic hydrogen, and underwent thermal desorption at temperatures as low as 300 deg C. The covalent form was more stable, being seemingly resistant to etching and persistent to high temperatures

  8. Chemical bath deposition of II-VI compound thin films

    Science.gov (United States)

    Oladeji, Isaiah Olatunde

    II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice. Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films. In this study, the zinc tetraammine complex ([Zn(NH3) 4]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH3)3]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film

  9. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    Science.gov (United States)

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-04-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

  10. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al2O3, we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al2O3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al2O3 film. • Ozone-based Al2O3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

  11. Kinematic Solar Dynamo with Spot Deposition

    Science.gov (United States)

    Karak, Bidya Binay; Miesch, Mark S.

    2016-05-01

    We have recently developed a kinematic dynamo model by including the observed differential rotation and the meridional flow. This model includes the emergence of sunspots from the deep-seated toroidal field and their subsequent decay at the surface, i.e., the Babcock-Leighton process for the generation of poloidal field.We shall show that this model reproduces most of the basic features of the solar magnetic cycle including the polarity reversals, 11 years periodicity, equatorward migration of sunspots at low latitudes and the poleward migration of the radial field at the surface. This model also produces the observed cycle variations when the fluctuations in the active-region tilt are included. North-south asymmetries of cycles from this model will also be demonstrated.

  12. Fabrication of Solar Cells by Deposition of Phosphorous Vapour

    International Nuclear Information System (INIS)

    This paper shows the fabrication of solar cells by deposition of phosphorous vapor using 10x10 cm2 polycrystalline silicon wafer. The diffusion process for forming p-n junction was carried out in the conveyor furnace at temperature of 860, 875, and 950 oC with belt velocities at 2, 3, 4, 5, 71/2 and 10 inches per minute (Ipm). The emphasize of the research is for understanding the characterization of the doping of phosphorous in order to obtain better performance of solar cells. At this initial research, it was found that solar cell efficiency is still around 7.5 - 8 % with short circuit current ISC in the range of 2.6 - 2.75 A. The current - voltage (I-V) measurement as well as the electrical parameters of solar cell are also discussed here. (author)

  13. High-Efficiency P-I-N Microcrystalline and Micromorph Thin Film Silicon Solar Cells Deposited on LPCVD Zno Coated Glass Substrates

    OpenAIRE

    Bailat, Julien; Dominé, Didier; Schlüchter, R.; Steinhauser, Jérôme; Faÿ, Sylvie; F Freitas; Bucher, C.; Feitknecht, Luc; Niquille, Xavier; Tscharner, T.; Shah, Arvind; Ballif, Christophe

    2008-01-01

    The authors report on the fabrication of microcrystalline silicon p-i-n solar cells with efficiencies close to 10%, using glass coated with zinc oxide (ZnO) deposited by low pressure chemical vapor deposition (LPCVD). LPCVD front contacts were optimized for p-i-n microcrystalline silicon solar cells by decreasing the free carrier absorption of the layers and increasing the surface roughness. These modifications resulted in an increased current density of the solar cell but also in significant...

  14. Light-induced chemical vapour deposition painting with titanium dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P

    2003-03-15

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  15. Light-induced chemical vapour deposition painting with titanium dioxide

    Science.gov (United States)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P.

    2003-03-01

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  16. Influence of Triethanolamine on the Chemical Bath Deposited NiS Thin Films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2011-01-01

    Full Text Available Problem statement: Recently, many scientists looking for new chalcogenide materials for the solar cell applications. Nowadays, silicon-based solar cell became dominant products in the market. Because of expensive silicon-based solar cells, scientists hope replaces it with cheaper chalcogenide materials. Approach: The binary chalcogenide materials were deposited onto microscope glass slide using simple chemical bath deposition method. Here, we study the influence of complexing agent in the preparation of thin films. The structural and morphological of the deposited films have been studied using X-ray diffraction and scanning electron microscopy, respectively. Results: The X-ray diffraction data showed that the films had polycrystalline in nature with hexagonal structure. The films deposited using 0.1 M of triethanolamine showed more NiS peaks and larger grain sizes as compared with 0.05M and 0.2 M triethanolamine based on the X-ray diffraction and scanning electron microscopy analysis, respectively. Conclusion: The complexing agent played important role during the deposition process.

  17. Development of suppression method for deposition of radioactive nuclides after chemical decontamination by platinum deposition treatment

    International Nuclear Information System (INIS)

    Noble metal chemical addition (NMCA) technology has been widely adopted for BWR plants in the US as a means to mitigate stress corrosion cracking (SCC). Dose rate of the reactor water recirculation system piping of some BWR plants that apply a combination of NMCA and zinc injection technology have gradually decreased. Chemical decontamination removes 60Co, but also the noble metal from the piping surfaces. Thus, effect of dose rate reduction by NMCA is decreased in the plant operating period after chemical decontamination. We considered that platinum deposition treatment just after chemical decontamination before plant operation would be effective to prevent redeposition of the 60Co. In this platinum deposition treatment process, Sodium hexahydroxyplatinate (IV), hydrazine and ammonia are used as the treatment chemicals. A 60Co deposition reduction effect of 1/2 compared to non-treatment is confirmed for up to 1,000 hours by laboratory experiments. (author)

  18. Chemical solution deposition: a path towards low cost coated conductors

    International Nuclear Information System (INIS)

    The achievement of low cost deposition techniques for high critical current YBa2Cu3O7 coated conductors is one of the major objectives to achieve a widespread use of superconductivity in power applications. Chemical solution deposition techniques are appearing as a very promising methodology to achieve epitaxial oxide thin films at a low cost, so an intense effort is being carried out to develop routes for all chemical coated conductor tapes. In this work recent achievements will be presented towards the goal of combining the deposition of different type of buffer layers on metallic substrates based on metal-organic decomposition with the growth of YBa2Cu3O7 layers using the trifluoroacetate route. The influence of processing parameters on the microstructure and superconducting properties will be stressed. High critical currents are demonstrated in 'all chemical' multilayers

  19. Water Condensation on Zinc Surfaces Treated by Chemical Bath Deposition

    OpenAIRE

    Narhe, R.D. (Ramchandra D.); González-Viñas, W.; Beysens, D.A. (Daniel A.)

    2010-01-01

    Water condensation, a complex and challenging process, is investigated on a metallic (Zn) surface, regularly used as anticorrosive surface. The Zn surface is coated with hydroxide zinc carbonate by chemical bath deposition, a very simple, low-cost and easily applicable process. As the deposition time increases, the surface roughness augments and the contact angle with water can be varied from 75º to 150º , corresponding to changing the surface properties from hydrophobic to ultrahydrophobic a...

  20. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    OpenAIRE

    Sun, Jie; Sun, Yingchun

    2007-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system pH value played an important role in this experiment. The growth rate is 12 nm/h at room temperature. Post-growth annealing not only densifies and purifies the films, but results in film crystallization a...

  1. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    OpenAIRE

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-01-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality compar...

  2. Effects of deposition time in chemically deposited ZnS films in acidic solution

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

    2015-08-31

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

  3. Effects of deposition time in chemically deposited ZnS films in acidic solution

    International Nuclear Information System (INIS)

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h

  4. CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation

    International Nuclear Information System (INIS)

    In this paper we investigated In2S3 as substitute for CdS, which is conventionally used as buffer layer in chalcopyrite based solar cells. In2S3 thin films were deposited by CBD and co-evaporation methods and these were employed as buffer layer in CuGaSe2 based solar cells. Previous to the device fabrication, comparative study was carried out on In2S3 thin films properties deposited from chemical bath containing thioacetamide, Indium Chloride, and sodium citrate, and In2S3 thin films prepared by co-evaporation from its constituents elements. The influence of synthesis conditions on the growth rate, optical, structural and morphological properties of the as-grown In2S3 thin films have been carried out with Spectrophotometry, X-ray diffraction and AFM microscopy techniques. Suitable conditions were found for reproducible and good quality In2S3 thin films synthesis. By depositing In2S3 thin films as buffer layers in CuGaSe2 configuration, a maximum solar cell efficiency of 6% was achieved, whilst the reference solar cell with CdS/CuGaSe2 on similar absorber exhibited 7% efficiency. (author)

  5. Chemical vapor deposition (CVD) of uranium for alpha spectrometry

    International Nuclear Information System (INIS)

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  6. On the development of single and multijunction solar cells with hot-wire CVD deposited active layers

    OpenAIRE

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; Schuttauf, J.A.; van der Werf, C.H.M.; J.K. Rath; Schropp, R.E.I.

    2008-01-01

    We present an overview of the scientific challenges and achievements during the development of thin film silicon based single and multijunction solar cells with hot-wire chemical vapor deposition (HWCVD) of the active silicon layers. The highlights discussed include the development of Ag/ZnO coatings with a proper roughness and morphology for optimal light trapping in single and multijunction thin film silicon solar cells, studies of the structural defects created by a rough substrate surface...

  7. Chemical signatures of planets: beyond solar-twins

    OpenAIRE

    Ramirez, I.; Melendez, J.; Asplund, M.

    2013-01-01

    Elemental abundance studies of solar twin stars suggest that the solar chemical composition contains signatures of the formation of terrestrial planets in the solar system, namely small but significant depletions of the refractory elements. To test this hypothesis, we study stars which, compared to solar twins, have less massive convective envelopes (therefore increasing the amplitude of the predicted effect) or are, arguably, more likely to host planets (thus increasing the frequency of sign...

  8. The effect of heteropolyacids and isopolyacids on the properties of chemically bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lejmi, N.; Savadogo, O. [Laboratoire d' Electrochimie et de Materiaux Energetiques, Ecole Polytechnique de Montreal, C.P. 6079, succ. Centre-ville, P.O. Box 6079, Qc, H3C 3A7 Montreal (Canada)

    2001-12-01

    The deposition of CdS films on ITO/glass substrates from a chemical bath containing cadmium acetate, ammonia, ammonium acetate and thiourea has been carried out with and without small amounts of heteropolyacids (HPA) (phosphotungstic acid (PTA): H{sub 3}[PW{sub 12}O{sub 40}], silicotungstic acid (STA): H{sub 4}[SiW{sub 12}O{sub 40}], phosphomolybdic acid (PMA): H{sub 3}[PMo{sub 12}O{sub 40}]) and isopolyacids (IPA) (tungstic acid (TA): H{sub 2}WO{sub 4} and molybdic acid (MA): H{sub 2}MoO{sub 4}) for different deposition times. The chemical, morphological, structural and optical properties of the films have been determined. The composition in sulphur and in cadmium of the films' surface and volume was determined for various HPA and IPA used in the deposition bath. The HPA and IPA which give the thickest film with the biggest grain size were deduced. The optical transmission at 400nm of CdS films deposited with STA at short time (20min) (50%) is higher than those of CdS deposited at longer time (6h) (7%). The optical transmission of CdS deposited with STA at short time is higher (50%) than that of CdS deposited without STA (20%). The performances of heterojunctions CdS/CdTe solar cells fabricated from CdS films deposited with and without STA and CdTe films deposited without STA have been determined. It was shown that the CdS/CdTe heterojunction solar cells fabricated from CdS films deposited with STA exhibited better photon collection efficiency and solar cell efficiency ({eta}=6%) than CdS/CdTe heterojunction solar cells fabricated from CdS films deposited without STA ({eta}=3.3%)

  9. Chemical vapor deposition (CVD) growth of graphene films

    Czech Academy of Sciences Publication Activity Database

    Frank, Otakar; Kalbáč, Martin

    Cambridge: Woodhead Publishing, 2014 - (Skákalová, V.; Kaiser, A.), s. 27-49. (Woodhead Publishing Series in Electronic and Optical Materials. 57). ISBN 978-0-85709-508-4 R&D Projects: GA MŠk LL1301 Institutional support: RVO:61388955 Keywords : graphene * chemical vapor deposition (CVD) * isotope labeling Subject RIV: CF - Physical ; Theoretical Chemistry

  10. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  11. IR Laser-induced Chemical Vapour Deposition of Polyselenocarbosilane Films

    Czech Academy of Sciences Publication Activity Database

    Santos, M.; Díaz, L.; Pola, Josef

    - : -, 2006, s. 1-2. [Reunión Nacional de Espectroscopia (RNE) y IV Congresso Ibérico de Espectroscopia (CIE) /20./. Ciúdad Real (ES), 10.09.2006-14.09.2006] Institutional research plan: CEZ:AV0Z40720504 Keywords : chemical vapour deposition Subject RIV: CH - Nuclear ; Quantum Chemistry

  12. Structure and physico-chemical properties of Kumkol petroleum deposit

    International Nuclear Information System (INIS)

    Results of study of physico-chemical properties and structure of Kumkol deposit petroleum in Southern Kazakhstan are presented. It is determined, that these petroleums are light, paraffinic, with low sulfur and ash contents, has insignificant concentration of vanadium and nickel, and has not porphyrin complexes. (author)

  13. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef;

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi...... increased the barrier property of the modified low-density polyethylene, polyethylene terephthalate, and polylactide by 96.48%, 99.69%, and 99.25%, respectively....

  14. ZnSe thin films by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Patil, P.S.; Tributsch, H. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CS, Glienicker Strasse-100, D-14109 Berlin (Germany); Ennaoui, A. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CG, Glienicker Strasse-100, D-14109 Berlin (Germany)

    1998-09-04

    The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX, TRMC (time-resolved microwave conductivity), optical absorbance and RBS techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV

  15. Chemical vapour deposition of zeolitic imidazolate framework thin films

    Science.gov (United States)

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials.

  16. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  17. Deposition of diamond and boron nitride films by plasma chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Albella, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Gomez-Aleixandre, C. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Sanchez-Garrido, O. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Vazquez, L. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Martinez-Duart, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.

    1995-01-01

    The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters (i.e. gas mixture, substrate conditioning, plasma discharges etc.) which favour the formation of the cubic phase. Most of the work is devoted to diamond owing to the large progress attained in this material. In fact, the use of diamond as a hard protective coating is now on a commercial scale. By contrast, the preparation of c-BN layers with good characteristics still needs of further research. ((orig.))

  18. Vacuum-deposited diphenyl-diketo-pyrrolopyrrole solar cell structures

    Science.gov (United States)

    Georgieva, G.; Dobrikov, G.; Heinrichova, P.; Karashanova, D.; Dimov, D.; Vala, M.; Weiter, M.; Zhivkov, I.

    2016-03-01

    Photoelectrical parameters were measured of solar cell ITO|PEDOT:PSS|composite| Al samples. The active composite film was deposited in vacuum by co-evaporation of 3,6-bis(5-(benzofuran-2-yl)thiophen-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP(TBFu)2) and fullerene (C60). Additional DPP(TBFu)2:C60 composite films were studied by spectroscopy in the ultraviolet and visible region (UV-VIS) and scanning electron microscopy (SEM). It was found that solvent annealing (SVA) of composite DPP(TBFu)2:C60 vacuum-deposited films with tetrahydrofuran vapors improves the solar cell parameters by increasing the efficiency more than tenfold. This could be related to the more homogenized structure of the SVA composite film, as observed by SEM. The increased light absorption, as shown by UV-VIS spectroscopy, around the peak at 350 nm contributed to the better SVA solar cell performance. Photogeneration in the samples follows a monomolecular mechanism.

  19. Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials.

    Science.gov (United States)

    Stefik, Morgan

    2016-07-01

    The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting. PMID:27246652

  20. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  1. Fundamental studies of chemical vapor deposition diamond growth processes

    International Nuclear Information System (INIS)

    We are developing laser spectroscopic techniques to foster a fundamental understanding of diamond film growth by hot filament chemical vapor deposition (CVD). Several spectroscopic techniques are under investigation to identify intermediate species present in the bulk reactor volume, the thin active volume immediately above the growing film, and the actual growing surface. Such a comprehensive examination of the overall deposition process is necessary because a combination of gas phase and surface chemistry is probably operating. Resonantly enhanced multiphoton ionization (REMPI) techniques have been emphasized. A growth rector that permits through-the-substrate gas sampling for REMPI/time-of-flight mass spectroscopy has been developed. 7 refs., 2 figs

  2. An Overview on Thin Films Prepared by Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Chemical vapor deposition, (CVD); involves the formation of a solid thin layer on a heated substrate surface by means of chemical reaction in gas or vapor phase. CVD techniques have expanded continuously and developed into the most important method for producing films for solid-state devices. CVD is considered to be the major technique for preparing most films used in the fabrication of semiconductor devices and integrated circuits. It has advantages such as the versatility, compatibility, quality, simplicity, reproducibility, and low cost. CVD has some disadvantages of; the use of comparatively high temperatures in many processes and chemical hazards caused by toxic, explosive, or corrosive gases. Chemical vapor deposition processes can be classified according to the type of their activation energy into thermally-activated CVD, plasma-enhanced CVD, laser-induced CVD, photochemical CVD, and electron-beam assisted CVD. In this paper an attempt is made to present all aspects of CVD equipment design and the variables affecting the deposition rate. Finally the preparation requirements and the application of CVD films are also summarized. 5 figs

  3. Research and Development Aspects on Chemical Preparation Techniques of Photoanodes for Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Nilofar Asim

    2014-01-01

    Full Text Available The importance of dye sensitized solar cells (DSSCs as a low-cost and environmentally friendly photovoltaic (PV technology has prompted many researchers to improve its efficiency and durability. The realization of these goals is impossible without taking into account the importance of the materials in DSSCs, so the focus on the preparation/deposition methods is essential. These methods can be either chemical or physical. In this study, the chemical applied methods that utilize chemical reaction to synthesize and deposit the materials are covered and categorized according to their gas phase and liquid phase precursors. Film processing techniques that can be used to enhance the materials' properties postpreparation are also included for further evaluation in this study. However, there is a variety of consideration, and certain criteria must be taken into account when selecting a specific deposition method, due to the fact that the fabrication conditions vary and are unoptimized.

  4. The power source effect on SiOx coating deposition by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    SiOx coatings were prepared by capacitively coupled plasma enhanced chemical vapor deposition on polyethyleneterephtalate substrates in 23 kHz middle-frequency and radio frequency power supplies, respectively, where hexamethyldisiloxane was used as gas source. The influences of discharge conditions on gas phase intermediate species and active radicals for SiOx formation was investigated by mass spectrometry as real-time in-situ diagnosis. The deposited SiOx coating chemical structures were also analyzed by Fourier transform infrared spectroscopy. Meanwhile, the film barrier property, oxygen transmission rate, was measured at 23 oC and 50% humidity circumstance. The better barrier property was obtained in the MF power source depositing SiOx coated PET.

  5. The versatility of hot-filament activated chemical vapor deposition

    International Nuclear Information System (INIS)

    In the field of activated chemical vapor deposition (CVD) of polycrystalline diamond films, hot-filament activation (HF-CVD) is widely used for applications where large deposition areas are needed or three-dimensional substrates have to be coated. We have developed processes for the deposition of conductive, boron-doped diamond films as well as for tribological crystalline diamond coatings on deposition areas up to 50 cm x 100 cm. Such multi-filament processes are used to produce diamond electrodes for advanced electrochemical processes or large batches of diamond-coated tools and parts, respectively. These processes demonstrate the high degree of uniformity and reproducibility of hot-filament CVD. The usability of hot-filament CVD for diamond deposition on three-dimensional substrates is well known for CVD diamond shaft tools. We also develop interior diamond coatings for drawing dies, nozzles, and thread guides. Hot-filament CVD also enables the deposition of diamond film modifications with tailored properties. In order to adjust the surface topography to specific applications, we apply processes for smooth, fine-grained or textured diamond films for cutting tools and tribological applications. Rough diamond is employed for grinding applications. Multilayers of fine-grained and coarse-grained diamond have been developed, showing increased shock resistance due to reduced crack propagation. Hot-filament CVD is also used for in situ deposition of carbide coatings and diamond-carbide composites, and the deposition of non-diamond, silicon-based films. These coatings are suitable as diffusion barriers and are also applied for adhesion and stress engineering and for semiconductor applications, respectively

  6. Coating of metals with titanium diboride by chemical vapor deposition

    International Nuclear Information System (INIS)

    This study is an experimental investigation of the chemical vapor deposition of titanium diboride on metallic substrates by the hydrogen reduction of TiCl4 and BCl3 at temperatures between 8500C and 11000C. Kovar, tantalum, and several stainless steels were found to be suitable substrates since they could withstand the deposition temperature, had adequate resistance to HCl, a by-product of the deposition reaction, and had thermal expansion coefficients sufficiently close to that of TiB2 (less than or equal to10 x 10-6/0C). The TiB2 coatings produced were 68.2% Ti and thus near stoichiometry and had very low impurity content. They had Knoop hardnesses averaging 3300 kg/mm2 and exhibited extraordinary erosion resistance

  7. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    Institute of Scientific and Technical Information of China (English)

    SUN,Jie(孙捷); SUN,Ying-Chun(孙迎春)

    2004-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al2(SO4)3]=0.0837 mol·L-1, [NaHCO3]=0.214 mol·L-1, 15 ℃. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well, Excellent quality of A12O3 films in this work is supported by electron dispersion spectroscopy,Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

  8. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik;

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...... of CVD processes; however very little information on the process and its characteristics can be found. This work presents the state of the art on the CVD of tantalum in long narrow channels and a reaction mechanism is suggested based on a rudimentary model. The effects of the system pressure...

  9. Atomic layer deposition grown MOx thin films for solar water splitting: Prospects and challenges

    International Nuclear Information System (INIS)

    The magnitude of energy challenge not only calls for efficient devices but also for abundant, inexpensive, and stable photoactive materials that can enable efficient light harvesting, charge separation and collection, as well as chemical transformations. Photoelectrochemical systems based on semiconductor materials have the possibility to transform solar energy directly into chemical energy the so-called “solar hydrogen.” The current challenge lies in the harvesting of a larger fraction of electromagnetic spectrum by enhancing the absorbance of electrode materials. In this context, atomically precise thin films of metal oxide semiconductors and their multilayered junctions are promising candidates to integrate high surface areas with well-defined electrode–substrate interface. Given its self-limited growth mechanism, the atomic layer deposition (ALD) technique offers a wide range of capabilities to deposit and modify materials at the nanoscale. In addition, it opens new frontiers for developing precursor chemistry that is inevitable to design new processes. Herein, the authors review the properties and potential of metal oxide thin films deposited by ALD for their application in photoelectrochemical water splitting application. The first part of the review covers the basics of ALD processes followed by a brief discussion on the electrochemistry of water splitting reaction. The second part focuses on different MOx films deposited by atomic layer deposition for water splitting applications; in this section, The authors discuss the most explored MOx semiconductors, namely, Fe2O3, TiO2, WO3, and ZnO, as active materials and refer to their application as protective coatings, conductive scaffolds, or in heterojunctions. The third part deals with the current challenges and future prospects of ALD processed MOx thin films for water splitting reactions

  10. Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in

  11. Physical properties of chemical vapour deposited nanostructured carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India); Rajpure, K.Y., E-mail: rajpure@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India)

    2011-02-03

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C{sub 10}H{sub 16})' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp{sup 3} bonds with diamond phase and less for SS shows graphitization effect with dominant sp{sup 2} bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  12. Carbon nanostructures and networks produced by chemical vapor deposition

    OpenAIRE

    Kowlgi, N.K.K.; Koper, G.J.M.; Raalten, R.A.D.

    2012-01-01

    The invention pertains to a method for manufacturing crystalline carbon nanostructures and/or a network of crystalline carbon nanostructures, comprising: (i) providing a bicontinuous micro-emulsion containing metal nanoparticles having an average particle size between 1and 100nm; (ii) bringing said bicontinuous micro-emulsion into contact with a substrate; and (iii) subjecting said metal nanoparticles and a gaseous carbon source to chemical vapor deposition, thus forming carbon nanostructures...

  13. Chemical vapour deposition synthetic diamond: materials, technology and applications

    OpenAIRE

    Balmer, R. S.; Brandon, J R; Clewes, S L; Dhillon, H. K.; Dodson, J M; Friel, I.; Inglis, P. N.; Madgwick, T D; Markham, M. L.; Mollart, T P; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A J; Wilman, J J

    2009-01-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synt...

  14. Dry-transfer of chemical vapour deposited nanocarbon thin films

    OpenAIRE

    Cole, Matthew Thomas

    2012-01-01

    This thesis presents the development of chemical vapour deposited (CVD) graphene and multi-walled carbon nanotubes (MWCNTs) as enabling technologies for flexible transparent conductors offering enhanced functionality. The technologies developed could be employed as thin film field emission sources, optical sensors and substrate-free wideband optical polarisers. Detailed studies were performed on CVD Fe and Ni catalysed carbon nanotubes and nanofibres on indium tin oxide, alu...

  15. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    OpenAIRE

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-01-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comp...

  16. Preparation of potassium tantalate thin films through chemical solution deposition

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Drbohlav, Ivo; Vaněk, Přemysl; Železný, Vladimír

    2004-01-01

    Roč. 24, č. 2 (2004), s. 455-462. ISSN 0955-2219 R&D Projects: GA MŠk LN00A028; GA MŠk OC 528.001; GA ČR GA202/02/0238; GA ČR GA202/00/1245 Institutional research plan: CEZ:AV0Z4032918 Keywords : chemical solution deposition * films * tantalates Subject RIV: CA - Inorganic Chemistry Impact factor: 1.483, year: 2004

  17. Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride

    OpenAIRE

    Besling, W.; van der Put, P.; Schoonman, J.

    1995-01-01

    Laser-induced Chemical Vapour Deposition of silicon carbonitride coatings and powders has been investigated using hexamethyldisilazane (HMDS) and ammonia as reactants. An industrial CW CO2-laser in parallel configuration has been used to heat up the reactant gases. HMDS dissociates in the laser beam and reactive radicals are formed which increase rapidly in molecular weight by an addition mechanism. Dense polymer-like silicon carbonitride thin films and nanosized powders are formed depending ...

  18. Chemical surface deposition of cds thin films from CdI2 aqueous solution

    Directory of Open Access Journals (Sweden)

    G. Il’chuk

    2009-01-01

    Full Text Available For the first time using CdI2 solution CdS films on glass and ITO coated glass substrates were produced by the method of layerwise chemical surface deposition (ChSD. CdS thin films with the widths from 40 nm to 100 nm were obtained for windows in solar cells based on CdS/CdTe heterojunctions. Changes of the structural and optical properties of CdS films due to air annealing are shown.

  19. Chemical reactions driven by concentrated solar energy

    Science.gov (United States)

    Levy, Moshe

    Solar energy can be used for driving endothermic reactions, either photochemically or thermally. The fraction of the solar spectrum that can be photochemically active is quite small. Therefore, it is desirable to be able to combine photochemical and thermal processes in order to increase the overall efficiency. Two thermally driven reactions are being studied: oil shale gasification and methane reforming. In both cases, the major part of the work was done in opaque metal reactors where photochemical reactions cannot take place. We then proceeded working in transparent quartz reactors. The results are preliminary, but they seem to indicate that there may be some photochemical enhancement. The experimental solar facilities used for this work include the 30 kW Schaeffer Solar Furnace and the 3 MW Solar Central Receiver in operation at the Weizmann Institute. The furnace consists of a 96 sq. m flat heliostat, that follows the sun by computer control. It reflects the solar radiation onto a spherical concentrator, 7.3 m in diameter, with a rim angle of 65 degrees. The furnace was characterized by radiometric and calorimetric measurements to show a solar concentration ratio of over 10,000 suns. The central receiver consists of 64 concave heliostats, 54 sq. m each, arranged in a north field and facing a 52 m high tower. The tower has five target levels that can be used simultaneously. The experiments with the shale gasification were carried out at the lowest level, 20 m above ground, which has the lowest solar efficiency and is assigned for low power experiments. We used secondary concentrators to boost the solar flux.

  20. A hybrid solar chemical looping combustion system with a high solar share

    International Nuclear Information System (INIS)

    Highlights: • A novel hybrid solar chemical looping combustion system is presented. • This hybrid CLC system integrates a CLC plant with a solar thermal energy plant. • The oxygen carrier particles are used for chemical and sensible thermal energy storage. • A solar cavity reactor is proposed for fuel reactor. • The calculations show a total solar share of around 60% can be achieved. - Abstract: A novel hybrid solar chemical looping combustion (Hy-Sol-CLC) is presented, in which the oxygen carrier particles in a CLC system are employed to provide thermal energy storage for concentrated solar thermal energy. This hybrid aims to take advantage of key features of a chemical looping combustion (CLC) system that are desirable for solar energy systems, notably their inherent chemical and sensible energy storage systems, the relatively low temperature of the “fuel” reactor (to which the concentrated solar thermal energy is added in a hybrid) relative to that of the final temperature of the product gas and the potential to operate the fuel reactor at a different pressure to the heated gas stream. By this approach, it is aimed to achieve high efficiency of the solar energy, infrastructure sharing, economic synergy, base load power generation and a high solar fraction of the total energy. In the proposed Hy-Sol-CLC system, a cavity solar receiver has been chosen for fuel reactor while for the storage of the oxygen carrier particles two reservoirs have been added to a conventional CLC. A heat exchanger is also proposed to provide independent control of the temperatures of the storage reservoirs from those of solar fuel and air reactors. The system is simulated using Aspen Plus software for the average diurnal profile of normal irradiance for Port Augusta, South Australia. The operating temperature of the fuel reactor, solar absorption efficiency, solar share, fraction of the solar thermal energy stored within the solar reactor, the fractions of sensible and

  1. Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD)

    Institute of Scientific and Technical Information of China (English)

    MA Yu-tian; GONG Zhu-Qing; XU Wei-Hong; HUANG Jian

    2006-01-01

    Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron microscopy, FTIR transmission,UV/VIS/NIR transmission and reflectance. The results show that the films structural and optical properties are influenced by many factors such as film thickness, crystallite size and substrate temperature. The films as thick as 111-133 nm have high IR transmission across the full 8-13 μm band and highly blocking in the solar spectral region elsewhere, which indicates that Te films thickness in this region can be used as good solar radiation shields in radiative cooling devices.

  2. Plasma assisted chemical vapour deposition for optical coatings

    International Nuclear Information System (INIS)

    Full text: Plasma assisted chemical vapour deposition (PECVD) is commonly used in semiconductor fabrication plants for depositing layers of dielectric materials. Reactive gasses are admitted to a chamber at low pressure and applying an electric field, usually a RF field, generates a plasma. The gasses react to form a solid material on the walls of the chamber and substrates. In this project we are exploring the possibility of applying this method to the growth of multilayer optical thin films. A small prototype system was constructed and optical multi layers of up to 24 layers were deposited over a diameter of 90 mm. The system uses 13.56 MHz RF to generate the plasma in a simple capacitive plate chamber. The gasses used were silane, oxygen and nitrogen. This allows SiO2 (RI 1.45) and Si3N4 (RI 1.93) to be deposited. Multilayer coatings were designed using these materials on TFCalc. The required thickness for the various layers were tabulated and fed into a computer controlling the gas flow during deposition. In this way the structures were deposited semi-automatically. The growing films were monitored using a spectrometer looking at light reflected from the growing film over a range from 400 - 800 nm simultaneously. This data was then used to reconstruct the deposition and analyze deviations from the design. An SEM micrograph of the cross-section of the multilayers was used to obtain relative thicknesses of the individual layers. Other structures deposited include rugate notch filters, coloured filters and broad band anti-reflection layers. Running the prototype has proved the concept and the project has moved to a scale up stage in which a larger version is being constructed at Avtronics Pty Ltd. This aims to coat uniformly over a diameter of 600 mm. Initially, the same materials will be used to produce coatings but fixture work will increase the refractive index range of materials which can be deposited and fully automate the coating process. (authors)

  3. Deposition of indium tin oxide by atmospheric pressure chemical vapour deposition

    International Nuclear Information System (INIS)

    We report the deposition of indium tin oxide (ITO) by atmospheric pressure chemical vapour deposition (APCVD). This process is potentially scalable for high throughput, large area production. We utilised a previously unreported precursor combination; dimethylindium acetylacetonate, [Me2In(acac)] and monobutyltintrichloride, MBTC. [Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Monobutyltintrichloride (MBTC) is also easily handled and can be readily vaporised. It is compatible with the process conditions required for using [Me2In(acac)]. Cubic ITO was deposited at a substrate temperature of 550 °C with growth rates exceeding 15 nm/s and growth efficiencies of between 20 and 30%. Resistivity was 3.5 × 10−4 Ω cm and transmission for a 200 nm film was > 85% with less than 2% haze.

  4. Deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition

    International Nuclear Information System (INIS)

    We report the deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition (APCVD) using a previously unreported precursor combination; dimethylindium acetylacetonate, [Me2In(acac)] and trifluoroacetic acid (TFA). This process is potentially scalable for high throughput, large area production. [Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Cubic fluorine doped indium oxide (F.In2O3) was deposited at a substrate temperature of 550 °C with growth rates exceeding 8 nm/s. Resistivity was 8 × 10−4 Ω cm and transmission for a 200 nm film was > 80% with less than 1% haze.

  5. Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition

    CERN Document Server

    Kang, S Y; Lee, S K; Hwang, C S; Kim, H J

    2000-01-01

    Ru thin films were deposited at 300 approx 400 .deg. C by using Ru(C sub 5 H sub 4 C sub 2 H sub 5) sub 2 (Ru(EtCp) sub 2) as a precursor and low-pressure metalorganic chemical vapor deposition. The addition of O sub 2 gas was essential to form Ru thin films. The deposition rates of the films were about 200 A/min. For low oxygen addition and high substrate temperature, RuO sub 2 phases were formed. Also, thermodynamic calculations showed that all the supplied oxygen was consumed to oxidize carbon and hydrogen, cracked from the precursor ligand, rather than Ru. Thus, metal films could be obtained There was an optimum oxygen to precursor ratio at which the pure Ru phase could be obtained with minimum generation of carbon and RuO sub 2

  6. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  7. Deposition pressure effects on material structure and performance of micromorph tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Delli Veneri, Paola; Mercaldo, Lucia V.; Privato, Carlo [Enea, Portici Research Center, Localita Granatello, 80055 Portici, Napoli (Italy)

    2008-01-15

    Tandem solar cells represent an elegant way of overcoming the efficiency limits of single-junction solar cells and reducing the light-induced degradation of amorphous silicon films. Stacked structures consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell allow a good utilization of the solar spectrum due to the band gap values of the two materials. These devices, firstly introduced by the IMT research group, were designated as ''micromorph'' tandem solar cells. To better exploit this concept, it is important to tune parameters like the band gaps and the short-circuit currents. In this work, we have realized micromorph tandem solar cells on Asahi U-type TCO-covered glass substrates. The intrinsic layer of both the amorphous top cell and the microcrystalline bottom cell is grown by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at 100 MHz at low substrate temperature (150{sup o}C). Finally, a ZnO reflector and a metal contact complete the structure. No intermediate optical mirror between the two cells is used at this stage. Undiluted a-Si:H, with reduced band gap when compared to H{sub 2}-diluted amorphous silicon, is used as absorber layer in the top cell. As for the bottom cell, the high-pressure-high-power regime (up to 267 Pa-80 W) has been explored aiming at growing high-quality microcrystalline silicon at large deposition rates. The effect of the structural composition of the microcrystalline absorber layer on the current-voltage characteristic and spectral response of tandem devices has been investigated. An efficiency of 11.3% has been obtained with short-circuit current densities around 13 mA/cm{sup 2}, open-circuit voltages {proportional_to}1.34 V and fill factors {proportional_to}66%. (author)

  8. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  9. In-line silicon epitaxy for photovoltaics using a continous chemical vapour deposition reactor.

    Science.gov (United States)

    Keller, Martin; Reber, Stefan; Schillinger, Norbert; Pocza, David; Arnold, Martin

    2011-09-01

    Thin film solar cell techniques can effectively reduce the costs for photovoltaic solar power. However, most of these techniques still have the disadvantage of a comparatively low efficiency. One way to realize a thin film solar cell concept with high efficiency potential is the crystalline silicon thin-film (cSiTF) concept. Following the high-temperature approach, this concept is based on a silicon epitaxy process. This paper reports the current status of the development of a high throughput epitaxy tool at Fraunhofer ISE and presents first results. Also presented is the development of a simulation tool which is a virtual image of the real setup in order to forecast save deposition conditions. The presented epitaxy tool is the ConCVD (Continuous Chemical Vapour Deposition), in which an improved reactor setup has been installed, based on the experience gained so far. To provide insight into upcoming further advances, the industrial scale epitaxy tool ProConCVD is presented as well. PMID:22097523

  10. Synthesis of mullite coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  11. Chemical Vapour Deposition of Gas Sensitive Metal Oxides

    Directory of Open Access Journals (Sweden)

    Stella Vallejos

    2016-03-01

    Full Text Available This article presents a review of recent research efforts and developments for the fabrication of metal-oxide gas sensors using chemical vapour deposition (CVD, presenting its potential advantages as a materials synthesis technique for gas sensors along with a discussion of their sensing performance. Thin films typically have poorer gas sensing performance compared to traditional screen printed equivalents, attributed to reduced porosity, but the ability to integrate materials directly with the sensor platform provides important process benefits compared to competing synthetic techniques. We conclude that these advantages are likely to drive increased interest in the use of CVD for gas sensor materials over the next decade, whilst the ability to manipulate deposition conditions to alter microstructure can help mitigate the potentially reduced performance in thin films, hence the current prospects for use of CVD in this field look excellent.

  12. Electrospray deposition of isolated chemically synthesized magnetic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Agostini, Pierre; Meffre, Anca; Lacroix, Lise-Marie; Ugnati, Damien [Université de Toulouse (France); INSA, UPS, CNRS, Laboratoire de Physique et Chimie des Nano-objets (LPCNO) (France); Ondarçuhu, Thierry [Centre d’Elaboration de Matériaux et d’Etudes Structurales (CEMES-CNRS) (France); Respaud, Marc; Lassagne, Benjamin, E-mail: lassagne@insa-toulouse.fr [Université de Toulouse (France); INSA, UPS, CNRS, Laboratoire de Physique et Chimie des Nano-objets (LPCNO) (France)

    2016-01-15

    The deposition of isolated magnetic nanoparticles onto a substrate was performed using electrohydrodynamic spraying. Two kinds of nanoparticles were sprayed, 11 nm CoFe carbide nanospheres and 10.5 nm Fe nanocubes. By studying carefully the evolution of the sprayed charged droplets and the mechanism of nanoparticle dispersion in them, we could optimize the nanoparticle concentration within the initial nanoparticle solution (i) to reduce the magnetic interaction and therefore prevent agglomeration and (ii) to obtain in a relatively short period (1 h) a deposit of isolated magnetic nanoparticles with a density of up to 400 nanoparticles per µm{sup 2}. These results open great perspectives for magnetic measurements on single objects using advanced magnetometry techniques as long as spintronics applications based on single chemically synthesized magnetic nanoparticles.

  13. Bath parameter dependence of chemically deposited Copper Selenide thin film

    International Nuclear Information System (INIS)

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation Of Cu2-xSe thin films on to glass substrate. Different thin fms (0.2-0.6/μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that completing the Cu2+ ions with EA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu2-xSe. (author)

  14. Synthesis of Aligned Carbon Nanotubes by Thermal Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Gang; ZHOU Ming; MA Weiwei; CAI Lan

    2009-01-01

    Single crystal silicon was found to be very beneficial to the growth of aligned carbon nanotubes by chemical vapor deposition with C2H2 as carbon source. A thin film of Ni served as catalyst was deposited on the Si substrate by the K575X Peltier Cooled High Resolution Sputter Coater before growth. The growth properties of carbon nanotubes were studied as a function of the Ni catalyst layer thickness. The diameter, growth rate and areal density of the carbon nanotubes were controlled by the initial thickness of the catalyst layer. Steric hindrance between nanotubes forces them to grow in well-aligned manner at an initial stage of growth. Transmission electron microscope analysis revealed that nanotubes grew by a tip growth mechanism.

  15. Kinetics of chemical vapor deposition of boron on molybdenum

    International Nuclear Information System (INIS)

    Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The experiments were conducted at atmospheric pressure. The weight change of the sample was noted by means of a thermobalance. Molybdenum was used as the substrate. It has been found that the outer layer of the deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB, and in the stational state of the reaction, the diffusion in the solid state is considered not to be rate controlling. When mass transport limitation was absent, the reaction orders with respect to boron trichloride and hydrogen were one third and one half, respectively. By comparing these orders with those obtained from Langmuir-Hinshelwood type equations, the rate controlling mechanism is identified to be the desorption of hydrogen chloride from the substrate

  16. Coloration efficiency of chemically deposited electrochromic thin films

    International Nuclear Information System (INIS)

    Transparent nickel oxide and copper oxide thin films were produced by very simple and economic method of chemical deposition. Those films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates. Electrochromic test device (ECTD) was constructed by using these films as working electrodes, together with the FTO as a counter electrode in alkaline environment (0,1 M NaOH aqueous solution). All the obtained films exhibited electrochromic behavior. Nichel oxide films were transparent for visible light in the reduced state, and displayed a dark brown color in the oxidised state and displayed a very dark brown color in the reduced state. The coloration efficiency (CE) at wavelength λ=670 nm was estimated from the slope of the graphical presentation of the optical density as a function of the charge density, during the charge extraction (nickel oxide films) and charge insertion (copper oxide films). (Author)

  17. Ion beam induced conductivity in chemically vapor deposited diamond films

    International Nuclear Information System (INIS)

    Polycrystalline diamond films deposited by the microwave plasma chemical vapor deposition (CVD) technique onto quartz substrates have been irradiated with 100 keV C and 320 keV Xe ions at room temperature and at 200 degree C. The dose dependence of the electrical conductivity measured in situ exhibited complicated, nonmonotonic behavior. High doses were found to induce an increase of up to ten orders of magnitude in the electrical conductivity of the film. The dose dependence of the conductivity for the CVD films was found to be very similar to that measured for natural, type IIa, single-crystal diamonds irradiated under identical conditions. This result suggests that the conduction mechanism in ion beam irradiated polycrystalline CVD diamond films is not dominated by grain boundaries and graphitic impurities as one might have expected, but rather is determined by the intrinsic properties of diamond itself

  18. Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer

    Energy Technology Data Exchange (ETDEWEB)

    Sobajima, Yasushi; Nishino, Mitsutoshi; Fukumori, Taiga; Kurihara, Masanori; Higuchi, Takuya; Nakano, Shinya; Toyama, Toshihiko; Okamoto, Hiroaki [Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Machikaneyama-cho 1-3, Osaka 560-8531 (Japan)

    2009-06-15

    Microcrystalline silicon ({mu}c-Si) films deposited at high growth rates up to 8.1 nm/s prepared by very-high-frequency-plasma-enhanced chemical vapor deposition (VHF-PECVD) at 18-24 Torr have been investigated. The relation between the deposition rates and input power revealed the depletion of silane. Under high-pressure deposition (HPD) conditions, the structural properties were improved. Furthermore, applying {mu}c-Si to n-i-p solar cells, short-circuit current density (J{sub SC}) was increased in accordance with the improvement of microstructure of i-layer. As a result, a conversion efficiency of 6.30% has been achieved employing the i-layer deposited at 8.1 nm/s under the HPD conditions. (author)

  19. Characterisation of TiO 2 deposited by photo-induced chemical vapour deposition

    Science.gov (United States)

    Kaliwoh, Never; Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We report the deposition of thin TiO 2 films on crystalline Si and quartz by photo-induced chemical vapour deposition (CVD) using UV excimer lamps employing a dielectric barrier discharge in krypton chloride (KrCl ∗) to provide intense narrow band radiation at λ=222 nm. The precursor used was titanium isopropoxide (TTIP). Films from around 20-510 nm in thickness with refractive indices from 2.20 to 2.54 were grown at temperatures between 50 and 350 °C. The higher refractive index values compare favourably with the value of 2.58 recorded for the bulk material. The measured deposition rate was around 50 nm/min at 350 °C. Fourier transform infrared spectroscopy (FTIR) revealed the presence of TiO 2 through the observation of a Ti-O absorption peak and the absence of OH in films deposited at 250-350 °C indicated relatively good quality films. The phase of films deposited at 200-350 °C was anatase as determined by X-ray diffraction.

  20. The chemical evolution of the solar neighbourhood

    OpenAIRE

    Vanbeveren, D.; De Donder, E.

    2002-01-01

    Recent models of galactic chemical evolution account for updated evolutionary models of massive stars (with special emphasis on stellar winds) and for the effects of intermediate mass and massive binaries. The results are summarised. We also present a critical discussion on possible effects of stellar rotation on overall galactic chemical evolutionary simulations.

  1. Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

    KAUST Repository

    Alsaggaf, Ahmed

    2015-07-01

    The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive

  2. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  3. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    Science.gov (United States)

    Bignardi, Luca; van Dorp, Willem F.; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-09-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer.

  4. Microscopic characterisation of suspended graphene grown by chemical vapour deposition.

    Science.gov (United States)

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; De Hosson, Jeff Th M; Stöhr, Meike; Rudolf, Petra

    2013-10-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer. PMID:23945527

  5. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    International Nuclear Information System (INIS)

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used

  6. Ballistic transport in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene

  7. Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

    Science.gov (United States)

    Matthews, Kristopher; Cruden, Brett A.; Chen, Bin; Meyyappan, M.; Delzeit, Lance

    2002-01-01

    Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

  8. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface

  9. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

  10. A hybrid solar and chemical looping combustion system for solar thermal energy storage

    International Nuclear Information System (INIS)

    Highlights: ► A novel solar–CLC hybrid system is proposed which integrates a CLC with solar thermal energy. ► The oxygen carrier particles are used as storage medium for thermal energy storage. ► A solar cavity reactor is proposed for fuel reactor. ► The absorbed solar energy is stored in the particles to produce a base heat load. -- Abstract: A novel hybrid of a solar thermal energy and a chemical looping combustion (CLC) system is proposed here, which employs the oxygen carrier particles in a CLC system to provide diurnal thermal energy storage for concentrated solar thermal energy. In taking advantage of the chemical and sensible energy storage systems that are an inherent part of a CLC system, this hybrid offers potential to achieve cost effective, base load power generation for solar energy. In the proposed system, three reservoirs have been added to a conventional CLC system to allow storage of the oxygen carrier particles, while a cavity solar receiver has been chosen for the fuel reactor. The performance of the system is evaluated using ASPEN PLUS software, with the model being validated using independent simulation result reported previously. Operating temperature, solar efficiency, solar fraction, exergy efficiency and the fraction of the solar thermal energy stored for a based load power generation application are reported.

  11. Solar chemical heat pipe in a closed loop

    International Nuclear Information System (INIS)

    The work on the solar CO2 reforming of methane was completed. A computer program was developed for simulation of the whole process. The calculations agree reasonably well with the experimental results. The work was written up and submitted for publication in Solar Energy. A methanator was built and tested first with a CO/H2 mixture from cylinders, and then with the products of the solar reformer. The loop was then closed by recirculating the products from the methanator into the solar reformer. Nine closed loop cycles were performed, so far, with the same original gas mixture. This is the first time that a closed loop solar chemical heat pipe was operated anywhere in the world. (author). 13 refs., 12 figs., 3 tabs

  12. Chemical vapor deposition of conformal, functional, and responsive polymer films.

    Science.gov (United States)

    Alf, Mahriah E; Asatekin, Ayse; Barr, Miles C; Baxamusa, Salmaan H; Chelawat, Hitesh; Ozaydin-Ince, Gozde; Petruczok, Christy D; Sreenivasan, Ramaswamy; Tenhaeff, Wyatt E; Trujillo, Nathan J; Vaddiraju, Sreeram; Xu, Jingjing; Gleason, Karen K

    2010-05-11

    Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed. PMID:20544886

  13. Analysis of post deposition processing for CdTe/CdS thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    McCandless, B.E.; Birkmire, R.W. (Inst. of Energy Conversion, Univ. of Delaware, Newark, DE (United States))

    1991-12-01

    A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400degC heat treatment with CdCl{sub 2} restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdS{sub x}Te{sub 1-x} layer with a narrower band gap than CdTe. Bifacial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage (V{sub oc}) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods. (orig.).

  14. Deposition and characterization of (Zn,Mg)O buffer layers on CIGSSe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hussmann, Benjamin; Erfurth, Felix; Schoell, Achim [Universitaet Wuerzburg (Germany). Experimentelle Physik II; Niesen, Thomas; Palm, Joerg [Avancis GmbH, Muenchen (Germany); Grimm, Alexander [Hahn-Meitner-Institut Berlin (Germany); Umbach, Eberhard [Universitaet Wuerzburg (Germany). Experimentelle Physik II; Forschungszentrum Karlsruhe (Germany)

    2008-07-01

    (Zn, Mg)O buffer layers on Cu(In,Ga)(S,Se){sub 2}(CIGSSe) thin film solar cells are promising alternatives to CdS buffer layers by featuring comparable efficiencies, better environmental compatibility and the possibility to implement the deposition process into a vacuum processing line. The (Zn,Mg)O buffer layers are deposited by radio frequency magnetron co-sputtering from two separate ZnO and MgO ceramic sputter targets to control the Mg-content and therefore the band gap of the buffer layer. In our experimental setup the sputter preparation chamber is connected with a UHV analysis system which allows in-situ characterization with X-ray photoelectron spectroscopy (XPS). The interface between the absorber and the buffer layer is believed to have a major influence on the cell efficiency and is thus of particular interest in this work. This interface has been investigated during layer deposition by sequentially interrupting the sputter process and performing XPS scans. We observed island growth of (Zn,Mg)O on CIGSSe and a strong oxidation of the absorber surface induced by the deposit. In order to complement the chemical and electronic information with structural data, energy dispersive X-ray analysis, X-ray diffraction, and scanning electron microscopy have been applied.

  15. Chemical evolution of the solar nebula: A new model

    Science.gov (United States)

    Trivedi, B. M. P.

    1984-01-01

    The common notion of a hot solar nebula from which meteoritic minerals condensed is not supported by theories of star formation. A model is developed which can give the same sequence of condensation without recourse to hot solar nebula. In this model, the solar nebula was formed from the matter ejected by the Sun during its T Tauri phase and the chemical condensation took place in this outflowing matter. Isotopic anomalies and the unique minerals found in meteorites may be explained by this model.

  16. Improvement of the characteristics of chemical bath deposition-cadmium sulfide films deposited on an O2 plasma-treated polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    We prepared cadmium sulfide (CdS) films on a polyethylene terephthalate (PET) substrate by a chemical bath deposition (CBD) technique. To improve the adhesion between the CdS film and the PET substrate, the substrate was pre-treated with an O2 plasma by an inductively coupled plasma. The surface characterizations of the pre-treated PET substrate were analyzed by a contact angle measurement and atomic force microscopy. The results showed that that O2 plasma-treated PET films had more hydrophilic surface. The hydrophilic property of the substrate is one of the important factors when a film is prepared by CBD. The structural and the optical properties of the CdS films, deposited on PET substrates, were analyzed by using a scanning electron microscope, X-ray diffraction and a UV–visible spectrophotometer. The CdS films were formed on a compact and granular structure. The optical transmittance was also improved. Therefore, the O2 plasma treatment of a PET surface is an effective method of preparing CdS films deposited on substrates by CBD. - Highlights: • Chemical bath deposition of CdS film for flexible solar cells • O2 plasma treatment improved adhesion between the CdS and polymer substrate • Identification of best fabrication condition of CdS window layers for flexible solar cells

  17. Neutron detectors made from chemically vapor deposited semiconductors

    International Nuclear Information System (INIS)

    In this paper, the authors present the results of investigations on the use of semiconductors deposited by chemical vapor deposition (CVD) for the fabrication of neutron detectors. For this purpose, 20 microm thick hydrogenated amorphous silicon (a-Si:H) pin diodes and 100 microm thick polycrystalline diamond resistive detectors were fabricated. The detectors were coupled to a neutron-charged particle converter: a layer of either gadolinium or boron (isotope 10 enriched) deposited by evaporation. They have demonstrated the capability of such neutron detectors to operate at neutron fluxes ranging from 101 to 106 neutrons/cm2.s. The fabrication of large area detectors for neutron counting or cartography through the use of multichannel reading circuits is discussed. The advantages of these detectors include the ability to produce large area detectors at low cost, radiation hardness (∼ 4 Mrad for a-Si:H and ∼ 100 Mrad for diamond), and for diamond, operation at temperatures up to 500 C. These properties enable the use of these devices for neutron detection in harsh environments. Thermal neutron detection efficiency up to 22% and 3% are expected by coupling a-Si:H diodes and diamond detectors to 3 microm thick gadolinium (isotope 157) and 2 microm thick boron layers, respectively

  18. Coating particles by chemical vapor deposition in fluidized bed reactors

    International Nuclear Information System (INIS)

    A technique to deposit a thin, adherent, uniformly dispersed coating onto the individual particles in a batch of granular or powdered material is described. We have been able to apply successfully a number of coatings to a variety of particulate materials using a fluidized-bed chemical vapor deposition (CVD) technique. By means of this technique we used tri-isobutylaluminum to apply adherent coatings of aluminum on powdered mica and powdered nickel. The powdered mica was also coated with titanium in a fluidized bed reactor in which titanium precursors were generated in situ by the reaction between HCl and metallic titanium. Post treatment of the titanium coated mica with ammonia produced agglomerates coated with TiN. These systems demonstrate the potential utility of the fluidized bed reactor for depositing a variety of coatings onto metallic and non-metallic dispersed materials. Preparation of such coated powders is likely to be valuable in a variety of industrial applications, such as the manufacture of composite structures. (orig.)

  19. Solvent-assisted dewetting during chemical vapor deposition.

    Science.gov (United States)

    Chen, Xichong; Anthamatten, Mitchell

    2009-10-01

    This study examines the use of a nonreactive solvent vapor, tert-butanol, during initiated chemical vapor deposition (iCVD) to promote polymer film dewetting. iCVD is a solventless technique to grow polymer thin films directly from gas phase feeds. Using a custom-built axisymmetric hot-zone reactor, smooth poly(methyl methacrylate) films are grown from methyl methacrylate (MMA) and tert-butyl peroxide (TBPO). When solvent vapor is used, nonequilibrium dewetted structures comprising of randomly distributed polymer droplets are observed. The length scale of observed topographies, determined using power spectral density (PSD) analysis, ranges from 5 to 100 microm and is influenced by deposition conditions, especially the carrier gas and solvent vapor flow rates. The use of a carrier gas leads to faster deposition rates and suppresses thin film dewetting. The use of solvent vapor promotes dewetting and leads to larger length scales of the dewetted features. Control over lateral length scale is demonstrated by preparation of hierarchal "bump on bump" topographies. Vapor-induced dewetting is demonstrated on silicon wafer substrate with a native oxide layer and also on hydrophobically modified substrate prepared using silane coupling. Autophobic dewetting of PMMA from SiOx/Si during iCVD is attributed to a thin film instability driven by both long-range van der Waals forces and short-range polar interactions. PMID:19670895

  20. Structural, electrical and optical properties of copper selenide thin films deposited by chemical bath deposition technique

    International Nuclear Information System (INIS)

    A low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films on glass substrates. Structural, electrical and optical properties of these films were investigated. X-ray diffraction (XRD) study of the Cu2-xSe films annealed at 523K suggests a cubic structure with a lattice constant of 5.697A. Chemical composition was investigated by X-ray photoelectron spectroscopy (XPS). It reveals that absorbed oxygen in the film decreases remarkably on annealing above 423K. The Cu/Se ratio was observed to be the same in as-deposited and annealed films. Both as- deposited and annealed films show very low resistivity in the range of (0.04- 0.15) x 10-5 Ω-m. Transmittance and Reflectance were found in the range of 5-50% and 2-20% respectively. Optical absorption of the films results from free carrier absorption in the near infrared region with absorption coefficient of ∼108 m-1. The band gap for direct transition, Eg.dir varies in the range of 2.0-2.3eV and that for indirect transition Eg.indir is in the range of 1.25-1.5eV.1. (author)

  1. Hybrid bioinorganic approach to solar-to-chemical conversion.

    Science.gov (United States)

    Nichols, Eva M; Gallagher, Joseph J; Liu, Chong; Su, Yude; Resasco, Joaquin; Yu, Yi; Sun, Yujie; Yang, Peidong; Chang, Michelle C Y; Chang, Christopher J

    2015-09-15

    Natural photosynthesis harnesses solar energy to convert CO2 and water to value-added chemical products for sustaining life. We present a hybrid bioinorganic approach to solar-to-chemical conversion in which sustainable electrical and/or solar input drives production of hydrogen from water splitting using biocompatible inorganic catalysts. The hydrogen is then used by living cells as a source of reducing equivalents for conversion of CO2 to the value-added chemical product methane. Using platinum or an earth-abundant substitute, α-NiS, as biocompatible hydrogen evolution reaction (HER) electrocatalysts and Methanosarcina barkeri as a biocatalyst for CO2 fixation, we demonstrate robust and efficient electrochemical CO2 to CH4 conversion at up to 86% overall Faradaic efficiency for ≥ 7 d. Introduction of indium phosphide photocathodes and titanium dioxide photoanodes affords a fully solar-driven system for methane generation from water and CO2, establishing that compatible inorganic and biological components can synergistically couple light-harvesting and catalytic functions for solar-to-chemical conversion. PMID:26305947

  2. Effects of Thermal Annealing on the Optical Properties of Titanium Oxide Thin Films Prepared by Chemical Bath Deposition Technique

    Directory of Open Access Journals (Sweden)

    H.U. Igwe

    2010-08-01

    Full Text Available A titanium oxide thin film was prepared by chemical bath deposition technique, deposited on glass substrates using TiO2 and NaOH solution with triethanolamine (TEA as the complexing agent. The films w ere subjected to post deposition annealing under various temperatures, 100, 150, 200, 300 and 399ºC. The thermal treatment streamlined the properties of the oxide films. The films are transparent in the entire regions of the electromagnetic spectrum, firmly adhered to the substrate and resistant to chemicals. The transmittance is between 20 and 95% while the reflectance is between 0.95 and 1%. The band gaps obtained under various thermal treatments are between 2.50 and 3.0 ev. The refractive index is between 1.52 and 2.55. The thickness achieved is in the range of 0.12-0.14 :m.These properties of the oxide film make it suitable for application in solar cells: Liquid and solid dye-sensitized photoelectrochemical solar cells, photo induced water splitting, dye synthesized solar cells, environmental purifications, gas sensors, display devices, batteries, as well as, solar cells with an organic or inorganic extremely thin absorber. These thin films are also of interest for the photooxidation of water, photocatalysis, electro chromic devices and other uses.

  3. A new apparatus for multilayer growth by chemical vapor deposition: The sliding-boat close-spaced technique

    Science.gov (United States)

    Yoshikawa, Akihiko; Yoshihara, Seiji; Kasai, Haruo; Nishimaki, Masao

    1980-10-01

    A new apparatus for multilayer growth by chemical vapor deposition, the sliding-boat close-spaced tecnique (SBCST), is presented. The structure of the SBCST growth apparatus is quite similar to that of the conventional liquid phase epitaxy sliding-boat. The possibility of obtaining thin multilayer films by SBCST is shown. Preliminary experimental results for its application to the growth of n-CdS/p-InP heterojunction solar cells are also shown.

  4. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  5. Thin films of barium fluoride scintillator deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    We have used metal-organic chemical vapor deposition (MOCVD) technology to coat optical substrates with thin (≅ 1-10 μm thick) films of inorganic BaF2 scintillator. Scanning electron microscope (SEM) photographs indicate that high-quality epitaxial crystalline film growth was achieved, with surface defects typically smaller than optical wavelengths. The scintillation light created by the deposition of ionizing radiation in the scintillating films was measured with a photomultiplier and shown to be similar to bulk melt-grown crystals. The results demonstrate the potential of these composite optical materials for planar and fiber scintillation radiation detectors in high energy and nuclear physics, synchrotron radiation research, and in radiation and X-ray imaging and monitoring. (orig.)

  6. SOLAR ORIGINS: PLACE AND CHEMICAL COMPOSITION

    Directory of Open Access Journals (Sweden)

    L. Carigi

    2011-01-01

    Full Text Available Discutimos un modelo de evolución química con rendimientos dependientes de Z que reproduce los gradientes de O/H, C/H y C/O del disco Galáctico y la historia química de la vecindad solar. El modelo ajusta las abundancias de H, He, C y O derivadas a partir de líneas de recombinación en la región H ii M17 (incluyendo la fracción de átomos de C y O embebida en polvo; las abundancias protosolares de H, He, C, O y Fe; y las relaciones C/O-O/H, C/Fe-Fe/H y O/Fe-Fe/H derivadas de estrellas de la vecindad solar. El ajuste del modelo con las abundancias protosolares al tiempo de formación del Sol implica que el Sol se originó en un medio químicamente bien mezclado a una distancia galactocéntrica de 7.6 ± 0.8 kpc.

  7. Electrochemical deposition of black nickel solar absorber coatings on stainless steel AISI316L for thermal solar cells

    OpenAIRE

    Lira-Cantú, Monica; Morales Sabio, Angel; Brustenga, Alex; Gómez-Romero, P.

    2005-01-01

    We report the electrochemical deposition of nanostructured nickel-based solar absorber coatings on stainless steel AISI type 316L. A sol–gel silica-based antireflection coating, from TEOS, was also applied to the solar surface by the dip-coating method. We report our initial results and analyze the influence of the stainless steel substrate on the final total reflectance properties of the solar absorber. The relation between surface morphology, observed by SEM and AFM, the comp...

  8. Early chemical history of the solar system

    Science.gov (United States)

    Grossman, L.; Larimer, J. W.

    1974-01-01

    By using equilibrium thermodynamics, the sequence of condensation of mineral phases from a cooling nebula of solar composition has been calculated. The theoretical models suggest that the chemistry and mineralogy of Ca-Al-rich inclusions in C2 and C3 chondrites were established during condensation at temperatures above 1300 K. Fractionation of such inclusions is necessary to account for the refractory element depletions of ordinary and enstatite chondrites relative to the carbonaceous chondrites. The metal-silicate fractionation in ordinary chondrites took place in the nebula at a temperature below 1000 K and at .00001 atm total pressure. The volatile element depletion of C2 and C3 chondrites relative to C1 chondrites took place during chondrule formation: the most volatile elements are depleted in ordinary chondrites because they accreted before these elements were totally condensed.

  9. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    International Nuclear Information System (INIS)

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface

  10. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: pkuhjf@bit.edu.cn [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Fu, Gan-hua; Krishnakumar, V.; Schimper, Hermann-Josef [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Jaegermann, Wolfram [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Besland, M.P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2015-05-01

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface.

  11. Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

    OpenAIRE

    Temple Boyer, Pierre; Jalabert, L.; Masarotto, L.; Alay, Josep Lluís; Morante i Lleonart, Joan Ramon

    2000-01-01

    Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane SiH4 and ammonia NH3 at high temperature (750°C) and the influences of the NH3/SiH4 gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene SiH2 into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich...

  12. Kesterite Deposited by Spray Pyrolysis for Solar Cell Applications

    OpenAIRE

    Espindola Rodriguez, Moises

    2015-01-01

    Solar cells generate electrical power by direct conversion of solar radiation into electricity using semiconductors. Once produced, the solar cells do not require the use of water; operate in silence and can be easily installed almost everywhere, as solar panels with low technological risk. In this thesis new photovoltaic materials and solar cells are investigated. From the beginning of the semiconductor era, silicon has been present; the semiconductor theory improved with the silicon tec...

  13. Chemical aspects of the gallex solar neutrino experiment

    International Nuclear Information System (INIS)

    The Gallex solar neutrino experiment, described in the previous paper, will utilize 30 tons of gallium, in the form of an aqueous solution of 8M GaCl3, as a radiochemical detector of solar neutrinos. The capture of a neutrino by 71Ga will initiate inverse β decay and produce 71Ge, which decays with an 11.2-day half-life. This talk will focus on the chemical steps that have been devised to separate the minute amounts of product germanium from the gallium solution and to convert the 71Ge to a chemical form suitable for inclusion in a proportional counter. Questions concerning the specification and determination of impurity levels in the GaCl3 solution, so as to preclude reactions on impurities that would mimic the capture of a solar neutrino by 71Ga, will also be discussed

  14. Fuels and chemicals from biomass using solar thermal energy

    Science.gov (United States)

    Giori, G.; Leitheiser, R.; Wayman, M.

    1981-01-01

    The significant nearer term opportunities for the application of solar thermal energy to the manufacture of fuels and chemicals from biomass are summarized, with some comments on resource availability, market potential and economics. Consideration is given to the production of furfural from agricultural residues, and the role of furfural and its derivatives as a replacement for petrochemicals in the plastics industry.

  15. Chemical vapour deposition synthetic diamond: materials, technology and applications

    Science.gov (United States)

    Balmer, R. S.; Brandon, J. R.; Clewes, S. L.; Dhillon, H. K.; Dodson, J. M.; Friel, I.; Inglis, P. N.; Madgwick, T. D.; Markham, M. L.; Mollart, T. P.; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A. J.; Wilman, J. J.; Woollard, S. M.

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

  16. Field emission properties of chemical vapor deposited individual graphene

    Energy Technology Data Exchange (ETDEWEB)

    Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

    2014-03-03

    Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10 nA current were found to be 515, 610, and 870 V/μm for vacuum gap of 400, 300, and 200 nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

  17. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  18. Thermoluminescence of Zn O thin films deposited by chemical bath

    International Nuclear Information System (INIS)

    Full text: Zn O films on Si were synthesized using a deposition method by chemical bath and thermally treated at 900 degrees C for 12 h in air. The morphological characterization by scanning electron microscopy reveals that uniform films were obtained. To investigate the thermoluminescent properties of the films were exposed to irradiation with beta particles with doses in the range from 0.5 to 128 Gy. The brightness curves obtained using a heating rate of 5 degrees C have two peaks, one at 124 and another at 270 degrees C, and a linear dependence of the integrated thermoluminescence as a function of dose. The second maximum reveals the existence of localized trapping states of potential utility in thermoluminescent dosimetry. (Author)

  19. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  20. Strain relaxation in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

    2013-12-07

    The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

  1. Characterization of Carbon Nanotubes Grown by Chemical Vapor Deposition

    Science.gov (United States)

    Cochrane, J. C.; Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Since the superior properties of multi-wall carbon nanotubes (MWCNT) could improve numerous devices such as electronics and sensors, many efforts have been made in investigating the growth mechanism of MWCNT to synthesize high quality MWCNT. Chemical vapor deposition (CVD) is widely used for MWCNT synthesis, and scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) are useful methods for analyzing the structure, morphology and composition of MWCNT. Temperature and pressure are two important growth parameters for fabricating carbon nanotubes. In MWCNT growth by CVD, the plasma assisted method is normally used for low temperature growth. However a high temperature environment is required for thermal CVD. A systematic study of temperature and pressure-dependence is very helpful to understanding MWCNT growth. Transition metal particles are commonly used as catalysis in carbon nanotube growth. It is also interesting to know how temperature and pressure affect the interface of carbon species and catalyst particles

  2. Structural properties of zinc oxide deposited using atmospheric pressure combustion chemical vapour deposition

    International Nuclear Information System (INIS)

    In this study the deposition of thin zinc oxide (ZnO) films under atmospheric pressure conditions was investigated. The deposition technique applied was combustion chemical vapour deposition (CCVD), at which a propane–air mixture was combusted in a burner. Dissolved zinc nitrate was used as precursor, which was guided as aerosol droplets by the processing gas flow directly into the reaction zone. Fundamental investigations were performed to form undoped ZnO. The structural properties of the films were analysed in dependence of the substrate temperature during the coating process. The presence of crystalline ZnO structures was proved and differences in film growth and crystallite sizes are revealed. Additionally, the particles generated by the CCVD-flame are characterised. The thin films showed a slight excess of Zn and several states of binding energy could be observed by fitting the core level spectra. Scanning and transmission electron microscopy also indicated ordered structures and additionally different orientations of crystallites were observed. - Highlights: • Columnar growth structures of ZnO by CCVD were observed. • The presence of polycrystalline ZnO with (002) as main orientation was confirmed. • Initial particles significantly differ from crystallite sizes of the resulting films. • The films show an excess of Zn with a Zn-to-O ratio of around 1.7

  3. Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 oC (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF2

  4. Chemical vapor deposition coatings for oxidation protection of titanium alloys

    Science.gov (United States)

    Cunnington, G. R.; Robinson, J. C.; Clark, R. K.

    1991-01-01

    Results of an experimental investigation of the oxidation protection afforded to Ti-14Al-21Nb and Ti-14Al-23Nb-2V titanium aluminides and Ti-17Mo-3Al-3Nb titanium alloy by aluminum-boron-silicon and boron-silicon coatings are presented. These coatings are applied by a combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. The former is for the application of aluminum, and the latter is for codeposition of boron and silicon. Coating thickness is in the range of 2 to 7 microns, and coating weights are 0.6 to 2.0 mg/sq cm. Oxidation testing was performed in air at temperatures to 1255 K in both static and hypersonic flow environments. The degree of oxidation protection provided by the coatings is determined from weight change measurements made during the testing and post test compositional analyses. Temperature-dependent total normal emittance data are also presented for four coating/substrate combinations. Both types of coatings provided excellent oxidation protection for the exposure conditions of this investigation. Total normal emittances were greater than 0.80 in all cases.

  5. Chemical vapour deposition of diamond coatings onto molybdenum dental tools

    International Nuclear Information System (INIS)

    The growth of polycrystalline diamond films onto molybdenum rods and dental burrs by using a new hot filament chemical vapour deposition (CVD) system has been investigated. Negative dc bias voltage relative to the filament was applied to the molybdenum substrate prior to deposition. This led to much improved film adhesion and increased nucleation density. There was a factor of four improvement in the adhesive force from 20 to 80 N when a bias voltage of -300 V was employed to the substrate. The CVD coated molybdenum dental burr was found to give much improved performance and lifetime compared to the conventional sintered diamond burr. The CVD diamond burr showed no signs of deterioration even after 1000 operations whereas the conventional sintered diamond burrs were ineffective after between 30 and 60 operations. This represents a 30-fold improvement when CVD is applied. CVD diamond growth onto dental burrs has the potential for replacing exciting technology by achieving better performance and lifetime in a cost-effective manner

  6. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    Science.gov (United States)

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  7. Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Scholtes, T.L.M.; Nanver, L.K.

    2012-01-01

    The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and

  8. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    Science.gov (United States)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  9. Hydrogen passivation of polycrystalline silicon solar cells by plasma deposition of silicon nitride

    International Nuclear Information System (INIS)

    Plasma-enhanced chemical vapor deposition (PECVD) is used for the deposition of a silicon nitride anti-reflection coating (ARC) onto 10 x 10 cm2 Wacker Silso polycrystalline silicon solar cells. It is found that the short-circuit current Isc is improved by 7 to 10% in comparison to reference cells with a standard screenprinted Ta2O5 coating. Part of the increase in Isc is because of a smaller reflectivity of the silicon nitride ARC. The other part of the improvement comes from an enhanced average minority-carrier diffusion length (Lmin). The increase in Lmin results from hydrogen passivation, and is attributed to the generation of hydrogen ions during PECVD of Si3N4. Furthermore it is shown that the passivation effect by PECVD of Si3N4 is comparable to that obtained with a 1/2 hour hydrogen plasma treatment, and that it is stable during a 1 hour anneal at 700 degrees C. The authors did not observe a significant influence of the substrate temperature during Si3N4 deposition in the range of 350 to 450 degrees C

  10. Laser diagnostics of chemical vapour deposition of diamond films

    CERN Document Server

    Wills, J B

    2002-01-01

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH sub 4 / H sub 2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH sub 3 , NH and C sub 2 H sub 2 in a hot filament (HF) activated gas mixture and CH, C sub 2 and C sub 2 H sub 2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH sub 3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O sub 2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (approx 10 sup 1 sup 3 molecules / cm...

  11. Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

    International Nuclear Information System (INIS)

    Ba(Zr0.05Ti0.95)O3 (BZT) thin films grown on Pt/Ti/SiO2/Si(1 0 0) substrates were prepared by chemical solution deposition. The structural and surface morphology of BZT thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results showed that the random oriented BZT thin film grown on Pt/Ti/SiO2/Si(1 0 0) substrate with a perovskite phase. The SEM surface image showed that the BZT thin film was crack-free. And the average grain size and thickness of the BZT film are 35 and 400 nm, respectively. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Ti, and Zr exist mainly in the forms of BZT perovskite structure.

  12. Vertically aligned peptide nanostructures using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Vasudev, Milana C; Koerner, Hilmar; Singh, Kristi M; Partlow, Benjamin P; Kaplan, David L; Gazit, Ehud; Bunning, Timothy J; Naik, Rajesh R

    2014-02-10

    In this study, we utilize plasma-enhanced chemical vapor deposition (PECVD) for the deposition of nanostructures composed of diphenylalanine. PECVD is a solvent-free approach and allows sublimation of the peptide to form dense, uniform arrays of peptide nanostructures on a variety of substrates. The PECVD deposited d-diphenylalanine nanostructures have a range of chemical and physical properties depending on the specific discharge parameters used during the deposition process. PMID:24400716

  13. Chemical bath deposition of Cu3BiS3 thin films

    Science.gov (United States)

    Deshmukh S., G.; Panchal A., K.; Vipul, Kheraj

    2016-05-01

    First time, copper bismuth sulfide (Cu3BiS3) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu3BiS3 thin films. The optical, surface morphology and structural properties of the Cu3BiS3 thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu3BiS3 film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the order of 105 cm-1. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu3BiS3 films can be applied as an absorber layer for thin film solar cells.

  14. Low-cost plasmonic solar cells prepared by chemical spray pyrolysis

    Directory of Open Access Journals (Sweden)

    Erki Kärber

    2014-12-01

    Full Text Available Solar cells consisting of an extremely thin In2S3/CuInS2 buffer/absorber layer uniformly covering planar ZnO were prepared entirely by chemical spray pyrolysis. Au nanoparticles (Au-NPs were formed via thermal decomposition of a gold(III chloride trihydrate (HAuCl4·3H2O precursor by spraying 2 mmol/L of the aqueous precursor solution onto a substrate held at 260 °C. Current–voltage scans and external quantum efficiency spectra were used to evaluate the solar cell performance. This work investigates the effect of the location of the Au-NP layer deposition (front side vs rear side in the solar cell and the effect of varying the volume (2.5–10 mL of the sprayed Au precursor solution. A 63% increase (from 4.6 to 7.5 mA/cm2 of the short-circuit current density was observed when 2.5 mL of the precursor solution was deposited onto the rear side of the solar cell.

  15. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  16. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  17. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH4 and CH4 precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH4:GeH4 flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH4:GeH4 flow ratio

  18. Thermoelectric Power of Nanocrystalline Silicon Prepared by Hot-Wire Chemical-Vapor Deposition

    Science.gov (United States)

    Kearney, Brian; Liu, Xiao; Jugdersuren, Battogtokh; Queen, Daniel; Metcalf, Thomas; Culbertson, James; Chervin, Christopher; Stroud, Rhonda; Nemeth, William; Wang, Qi

    Although doped bulk silicon possesses a favorable Seebeck coefficient and electrical conductivity, its thermal conductivity is too large for practical thermoelectric applications. Thin film nanocrystalline silicon prepared by hot-wire chemical-vapor deposition (HWCVD) is an established material used in multijunction amorphous silicon solar cells. Its potential in low cost and scalable thermoelectric applications depends on achieving a low thermal conductivity without sacrificing thermoelectric power and electrical conductivity. We examine the thermoelectric power of boron-doped HWCVD nanocrystalline silicon and find that it is comparable to doped nanostructured silicon alloys prepared by other methods. Given the low thermal conductivity and high electrical conductivity of these materials, they can achieve a high thermoelectric figure of merit, ZT. Work supported by the Office of Naval Research.

  19. Simple Chemical Solution Deposition of Co₃O₄ Thin Film Electrocatalyst for Oxygen Evolution Reaction.

    Science.gov (United States)

    Jeon, Hyo Sang; Jee, Michael Shincheon; Kim, Haeri; Ahn, Su Jin; Hwang, Yun Jeong; Min, Byoung Koun

    2015-11-11

    Oxygen evolution reaction (OER) is the key reaction in electrochemical processes, such as water splitting, metal-air batteries, and solar fuel production. Herein, we developed a facile chemical solution deposition method to prepare a highly active Co3O4 thin film electrode for OER, showing a low overpotential of 377 mV at 10 mA/cm(2) with good stability. An optimal loading of ethyl cellulose additive in a precursor solution was found to be essential for the morphology control and thus its electrocatalytic activity. Our results also show that the distribution of Co3O4 nanoparticle catalysts on the substrate is crucial in enhancing the inherent OER catalytic performance. PMID:26489005

  20. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  1. Preparation and characterization of ZnS thin films by the chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Iwashita, Taisuke [Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science 1-14-6 Kudankita, Chiyoda, Tokyo 102-0073 (Japan); Ando, Shizutoshi, E-mail: ando_shi@rs.kagu.tus.ac.jp [Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science 1-14-6 Kudankita, Chiyoda, Tokyo 102-0073 (Japan); Research Institute for Science and Technology, Advanced Device Laboratories (ADL), Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601 (Japan); Research Institute for Science and Technology, Photovoltaic Science and Technology Research Division, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601 (Japan)

    2012-10-01

    ZnS thin films prepared on quartz substrates by the chemical bath deposition (CBD) method with three type temperature profile processes have been investigated by X-ray diffraction, scanning electron microscope, energy dispersive X-ray analysis and light transmission. One is a 1-step growth process, and the other is 2-steps growth and self-catalyst growth processes. The surface morphology of CBD-ZnS thin films prepared by the CBD method with the self-catalyst growth process is flat and smooth compared with that prepared by the 1-step and 2-steps growth processes. The self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement in crystallinity of ZnS thin films prepared by CBD. ZnS thin films prepared by CBD method with self-catalyst growth process can be expected for improvement in the conversion efficiency of Cu(InGa)Se{sub 2}-based thin film solar cells by using it for the buffer layer. - Highlights: Black-Right-Pointing-Pointer ZnS thin films were prepared by chemical bath deposition (CBD) method. Black-Right-Pointing-Pointer The crystallization of CBD-ZnS films was further improved. Black-Right-Pointing-Pointer The crystallinity of CBD-ZnS thin films is dependent on the zinc source material. Black-Right-Pointing-Pointer Self-catalyst growth process is useful for the growth of thin films by CBD method. Black-Right-Pointing-Pointer It is expected to improve the conversion efficiency of CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells.

  2. Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gedelian, Cynthia A. [Department of Physics, Applied Physics, and Astronomy, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy 12180-3590, NY (United States); Rajanna, K.C., E-mail: kcrajannaou@yahoo.com [Department of Chemistry, Osmania University, Hyderabad 500007, Andhra Pradesh (India); Premerlani, Brian; Lu, Toh-Ming [Department of Physics, Applied Physics, and Astronomy, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy 12180-3590, NY (United States)

    2014-01-15

    Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

  3. Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

  4. Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

    OpenAIRE

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; J.K. Rath; Schropp, R.E.I.

    2008-01-01

    Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in the energy conversion efficiency is obtained. Compared to PECVD, the unique characteristics of hot-wire CVD (HWCVD), such as the catalytic reactions, the absence of ion bombardment, the substrate ...

  5. Preparation and Characterization of SnO2 thin films deposited by Chemical Bath Deposition method

    Science.gov (United States)

    Yusuf, Gbadebo T.; Raimi, Adepoju M.; Familusi, Timothy O.; Awodugba, Ayodeji O.; Efunwole, Hezekiah O.

    2013-04-01

    SnO2 thin films have been deposited onto the soda lime glass substrates by the chemical bath deposition method. The structural and optical properties of the SnO2 thin films were investigated. Tin chloride solution (SnCl2) and methanol were used as starting materials at substrate temperature 300^oC. The crystal structure and orientation of the SnO2 thin films were investigated by X-ray diffraction (XRD) patterns. The average grain size of the films was calculated using the Scherer formula and was found to be 29.6 nm which increased to 30.04nm after annealing in air at 400^oC. The optical absorbance and transmittance measurements were recorded by using spectrophotometer. The average transmittance of the film was around 80 % at wavelength 550 nm. The optical band gap of the thin films was determined and found to be 3.71eV. The gas sensing properties of tin oxide thin films obtained in this work could be performed for different gases like CO, CH4, H2S, H2 etc.

  6. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  7. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  8. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    International Nuclear Information System (INIS)

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition

  9. Grain boundaries in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    The scientific literature on grain boundaries (GBs) in graphene was reviewed. The review focuses mainly on the experimental findings on graphene grown by chemical vapor deposition (CVD) under a very wide range of experimental conditions (temperature, pressure hydrogen/hydrocarbon ratio, gas flow velocity and substrates). Differences were found in the GBs depending on the origin of graphene: in micro-mechanically cleaved graphene (produced using graphite originating from high-temperature, high-pressure synthesis), rows of non-hexagonal rings separating two perfect graphene crystallites are found more frequently, while in graphene produced by CVD—despite the very wide range of growth conditions used in different laboratories—GBs with more pronounced disorder are more frequent. In connection with the observed disorder, the stability of two-dimensional amorphous carbon is discussed and the growth conditions that may impact on the structure of the GBs are reviewed. The most frequently used methods for the atomic scale characterization of the GB structures, their possibilities and limitations and the alterations of the GBs in CVD graphene during the investigation (e.g. under e-beam irradiation) are discussed. The effects of GB disorder on electric and thermal transport are reviewed and the relatively scarce data available on the chemical properties of the GBs are summarized. GBs are complex enough nanoobjects so that it may be unlikely that two experimentally produced GBs of several microns in length could be completely identical in all of their atomic scale details. Despite this, certain generalized conclusions may be formulated, which may be helpful for experimentalists in interpreting the results and in planning new experiments, leading to a more systematic picture of GBs in CVD graphene. (paper)

  10. Laser diagnostics of a diamond depositing chemical vapour deposition gas-phase environment

    International Nuclear Information System (INIS)

    Studies have been carried out to understand the gas-phase chemistry underpinning diamond deposition in hot filament and DC-arcjet chemical vapour deposition (CVD) systems. Resonance enhanced Multiphoton lonisation (REMPI) techniques were used to measure the relative H atom and CH3 radical number densities and local gas temperatures prevalent in a hot filament reactor, operating on Ch4/H2 and C2H2/H2 gas mixtures. These results were compared to a 3D-computer simulation, and hence provided an insight into the nature of the gas-phase chemistry with particular reference to C2→C1 species conversion. Similar experimental and theoretical studies were also carried out to explain the chemistry involved in NH3/CH4/H2 and N2/CH4/H2 gas mixtures. It was demonstrated that the reactive nature of the filament surface was dependent on the addition of NH3, influencing atomic hydrogen production, and thus the H/C/N gas-phase chemistry. Studies of the DC-arcjet diamond CVD reactor consisted of optical emission spectroscopic studies of the plume during deposition from an Ar/H2/CH4/N2 gas mixture. Spatially resolved species emission intensity maps were obtained for C2(d→a), CN(B→X) and Hβ from Abel-inverted datasets. The C2(d→a) and CN(B→X) emission intensity maps both show local maxima near the substrate surface. SEM and Laser Raman analyses indicate that N2 additions lead to a reduction in film quality and growth rate. Photoluminescence and SIMS analyses of the grown films provide conclusive evidence of nitrogen incorporation (as chemically bonded CN). Absolute column densities of C2(a) in a DC-arcjet reactor operating on an Ar/H2/CH4 gas mixture, were measured using Cavity ring down spectroscopy. Simulations of the measured C2(v=0) transition revealed a rotational temperature of ∼3300 K. This gas temperature is similar to that deduced from optical emission spectroscopy studies of the C2(d→a) transition. (author)

  11. Solar-driven chemical energy source for a Martian biota

    Science.gov (United States)

    Clark, B. C.

    1979-01-01

    Microorganisms deep in the Martian soil could derive energy indirectly from the sun via chemical reactions involving atmospheric photolysis products of the solar ultraviolet flux. The Viking discovery of a chemically uniform regolith which, though poor in organics, is rich in sulfur-containing compounds suggests reaction sequences in which sulfur is recycled through reduced and oxidized states by biologically catalyzed reactions with photochemically-produced atmospheric constituents. One candidate reaction, reduction of soil sulfate minerals by molecular hydrogen, is already exploited on earth by bacteria of the ubiquitous and tenacious Desulfovibrio genus.

  12. Thin-Film Deposition of Metal Oxides by Aerosol-Assisted Chemical Vapour Deposition: Evaluation of Film Crystallinity

    Science.gov (United States)

    Takeuchi, Masahiro; Maki, Kunisuke

    2007-12-01

    Sn-doped In2O3 (ITO) thin films are deposited on glass substrates using 0.2 M aqueous and methanol solutions of InCl3(4H2O) with 5 mol % SnCl2(2H2O) by aerosol-assisted chemical vapour deposition under positive and negative temperature gradient conditions. The film crystallinity is evaluated by determining the film thickness dependence of X-ray diffraction peak height. When using aqueous solution, the ITO films grow with the same crystallinity during the deposition, but when using methanol solution, the preferred orientation of ITO changes during the deposition.

  13. Anion Effect of Zinc Source on Chemically Deposited ZnS(O,OH Films

    Directory of Open Access Journals (Sweden)

    K. Ernits

    2009-01-01

    Full Text Available The study on the anion effect of different Zn sources—Zn(CH3COO2, ZnCl2, ZnI2, Zn(NO32 and ZnSO4—on the chemical deposition of ZnS(O,OH films revealed that the growth rate and composition of the ZnS(O,OH layer depend on the instability constant (pK value of the corresponding Zn-complex Zn(Ln in the chemical bath solution. In the region of pKZn(NH32+>pKZn(Ln the ZnS(O,OH film's growth rate and ZnS concentration in films increased with the increasing pK value of the used Zn salt complex up to the pK value of the Zn[NH3]2+ complex and decreased in the region where pKZn(NH32+deposited ZnS(O,OH films did not depend on the Zn precursor's instability constant, the ZnS(O,OH film from zinc nitrate containing bath has higher band gap energy (Eg = 3.8 eV. The maximum efficiency of CISSe and CZTSSe monograin layer solar cells was gained with ZnS(O,OH buffer layer deposited from CBD solution containing Zn(CH3COO2 as Zn source, which provided the highest growth rate and ZnS concentration in the ZnS(O,OH film on glass substrates.

  14. Charged impurity-induced scatterings in chemical vapor deposited graphene

    Science.gov (United States)

    Li, Ming-Yang; Tang, Chiu-Chun; Ling, D. C.; Li, L. J.; Chi, C. C.; Chen, Jeng-Chung

    2013-12-01

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  15. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity.

    Science.gov (United States)

    Bérard, Ariane; Patience, Gregory S; Chouinard, Gérald; Tavares, Jason R

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  16. Structure of chemical vapor deposition titania/silica gel

    Energy Technology Data Exchange (ETDEWEB)

    Leboda, R.; Gun' ko, V.M.; Marciniak, M.; Malygin, A.A.; Malkin, A.A.; Grzegorczyk, W.; Trznadel, B.J.; Pakhlov, E.M.; Voronin, E.F.

    1999-10-01

    The structure of porous silica gel/titania synthesized using chemical vapor deposition (CVD) of titania via repeated reactions of TiCl{sub 4} with the surface and subsequent hydrolysis of residual Ti-Cl bonds at different temperatures was investigated by means of low-temperature nitrogen adsorption-desorption, X-ray diffraction (XRD), IR spectroscopy, and theoretical methods. A globular model of porous solids with corpuscular structure was applied to estimate the porosity parameters of titania/silica gel adsorbents. The utilization of this model is useful, for example, to predict conditions for synthesis of titania/silica with a specified structure. Analysis of pore parameters and fractal dimension suggests that the porosity and fractality of samples decrease with increasing amount of TiO{sub 2} covering the silica gel surface in a nonuniform layer, which represents small particles embedded in pores and larger particles formed at the outer surface of silica globules. Theoretical simulation shows that the Si-O-Ti linkages between the cover and the substrate can be easily hydrolyzed, which is in agreement with the IR data corresponding to the absence of a band at 950 cm {sup {minus}1} (characteristic of Si-O-Ti bridges) independent of the concentration of CVD-titania.

  17. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  18. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Science.gov (United States)

    Zubkov, V. I.; Kucherova, O. V.; Bogdanov, S. A.; Zubkova, A. V.; Butler, J. E.; Ilyin, V. A.; Afanas'ev, A. V.; Vikharev, A. L.

    2015-10-01

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120-150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10-13 down to 2 × 10-17 cm2 was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (˜2 × 10-20 cm2). At T > Troom in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  19. Growth of graphene underlayers by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  20. Growth of graphene underlayers by chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Mopeli Fabiane

    2013-11-01

    Full Text Available We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD. Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT to yield poly (methyl methacrylate (PMMA/graphene/glass or (2 inverted transfer (IT to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM and atomic force microscopy (AFM were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  1. Development of microforming process combined with selective chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Koshimizu Kazushi

    2015-01-01

    Full Text Available Microforming has been received much attention in the recent decades due to the wide use of microparts in electronics and medical purpose. For the further functionalization of these micro devices, high functional surface with noble metals and nanomaterials are strongly required in bio- and medical fields, such as bio-sensors. To realize the efficient manufacturing process, which can deform the submillimeter scale bulk structure and can construct the micro to nanometer scale structures in one process, the present study proposes a combined process of microforming for metal foils with a selective chemical vapor deposition (SCVD on the active surface of work materials. To clarify the availability of this proposed process, the feasibility of SCVD of functional materials to active surface of titanium (Ti was investigated. CVD of iron (Fe and carbon nanotubes (CNTs which construct CNTs on the patterned surface of active Ti and non-active oxidation layer were conducted. Ti thin films on silicon substrate and Fe were used as work materials and functional materials, respectively. CNTs were grown on only Ti surface. Consequently, the selectivity of the active surface of Ti to the synthesis of Fe particles in CVD process was confirmed.

  2. Comparison of different electrochemical deposits for contact metallization of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Boulord, C., E-mail: caroline.boulord@gmail.f [Institut des nanotechnologies de Lyon (INL), UMR 5270, INSA de Lyon, 20 rue Albert Einstein, 69621 Villeurbanne Cedex (France); Kaminski, A. [Institut des nanotechnologies de Lyon (INL), UMR 5270, INSA de Lyon, 20 rue Albert Einstein, 69621 Villeurbanne Cedex (France); Veschetti, Y. [CEA-DRT/LITEN/Departements des technologies solaires/Laboratoire des composants solaires, 17 rue des Martyrs Batiment C2 38054 Grenoble Cedex 9 (France); Lemiti, M. [Institut des nanotechnologies de Lyon (INL), UMR 5270, INSA de Lyon, 20 rue Albert Einstein, 69621 Villeurbanne Cedex (France)

    2009-11-25

    The aim of the present work is to compare deposits made by electroless nickel-phosphorous (Ni-P) from two different baths and to see how it can be used for the fabrication of solar cell contacts: deposition on screen-printed contacts or directly on silicon as seed layer for subsequent electrolytic deposition of copper or silver. N-type silicon samples were plated, so as to study the feasibility of such deposits (homogeneity, adhesion). Scanning electron microscope (SEM) and contact resistivity measurements by transmission line model (TLM) were used to check the quality of the deposits. Dark I-V characteristics and external quantum efficiency have also been performed on standard silicon solar cells before and after Ni-P deposition on screen-printed contacts.

  3. Comparison of different electrochemical deposits for contact metallization of silicon solar cells

    International Nuclear Information System (INIS)

    The aim of the present work is to compare deposits made by electroless nickel-phosphorous (Ni-P) from two different baths and to see how it can be used for the fabrication of solar cell contacts: deposition on screen-printed contacts or directly on silicon as seed layer for subsequent electrolytic deposition of copper or silver. N-type silicon samples were plated, so as to study the feasibility of such deposits (homogeneity, adhesion). Scanning electron microscope (SEM) and contact resistivity measurements by transmission line model (TLM) were used to check the quality of the deposits. Dark I-V characteristics and external quantum efficiency have also been performed on standard silicon solar cells before and after Ni-P deposition on screen-printed contacts.

  4. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying substrat

  5. Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

    NARCIS (Netherlands)

    Aresta, G.; Palmans, J.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Organosilicon layers have been deposited from 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3) by means of the initiated-chemical vapor deposition (i-CVD) technique in a deposition setup, ad hoc designed for the engineering of multilayer moisture permeation barriers. The application of Fourier

  6. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    Science.gov (United States)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  7. Low-Temperature Crystalline Titanium Dioxide by Atomic Layer Deposition for Dye-Sensitized Solar Cells

    KAUST Repository

    Chandiran, Aravind Kumar

    2013-04-24

    Low-temperature processing of dye-sensitized solar cells (DSCs) is crucial to enable commercialization with low-cost, plastic substrates. Prior studies have focused on mechanical compression of premade particles on plastic or glass substrates; however, this did not yield sufficient interconnections for good carrier transport. Furthermore, such compression can lead to more heterogeneous porosity. To circumvent these problems, we have developed a low-temperature processing route for photoanodes where crystalline TiO2 is deposited onto well-defined, mesoporous templates. The TiO2 is grown by atomic layer deposition (ALD), and the crystalline films are achieved at a growth temperature of 200 C. The ALD TiO2 thickness was systematically studied in terms of charge transport and performance to lead to optimized photovoltaic performance. We found that a 15 nm TiO2 overlayer on an 8 μm thick SiO2 film leads to a high power conversion efficiency of 7.1% with the state-of-the-art zinc porphyrin sensitizer and cobalt bipyridine redox mediator. © 2013 American Chemical Society.

  8. Corrosion deposits removal from Kozloduy NPP VVER-440 steam generator tubing by chemical cleaning

    International Nuclear Information System (INIS)

    A strict control of primary and secondary circuits metal equipment corrosion of VVER-440 Kozloduy NPP units has been performed for the whole period of operation. This is carried out following a specific program including visual inspection and chemical analysis of equipment corrosion deposits. During their migration, the corrosion products deposit on the metal surface in the so-called standstill zones. One of these is the steam generator. The process results in: deterioration of thermal exchange; deterioration of corrosion conditions under deposits corrosion, pitting corrosion, etc. Using quantity deposits data and deposits chemical consistence, chemical cleaning of steam generator surfaces is performed. Decision for such chemical treatment of secondary circuit equipment is taken when the amount of deposits on the steam generator tubing is greater than 150 g/m2. This limit is based on operational experience and manufacturer requirements. (R.P.)

  9. Chemical energy storage system for Solar Electric Generating System (SEGS) solar thermal power plant

    International Nuclear Information System (INIS)

    This paper reports the Pacific Northwest Laboratory evaluated the potential feasibility of using chemical energy storage at the Solar Electric Generating System (SEGS) power plants developed by Luz International. Like sensible or latent heat energy storage systems, chemical energy storage can be beneficially applied to solar thermal power plants to dampen the impact of cloud transients, extend the daily operating period, and/or allow a higher fraction of power production to occur during high-valued peak demand periods. Higher energy storage densities make chemical energy storage a potentially attractive option. The results of the evaluation indicated that a system based on the reversible reaction, CaO + H2O = Ca(OH)2, could be technically and economically feasible for this application, but many technical and economic issues must be resolved

  10. Early Stages of the Chemical Vapor Deposition of Pyrolytic Carbon Investigated by Atomic Force Microscopy

    OpenAIRE

    Pfrang, Andreas; WAN Yong-Zhong; Schimmel, Thomas

    2009-01-01

    The early stages of chemical vapor deposition of pyrolytic carbon on planar silicon substrates were studied by the atomic force microscopy-based technique of chemical contrast imaging. Short deposition times were chosen to focus on the early stages of the deposition process, and three different types of nucleation were found: random nucleation of single islands, nucleation of carbon islands along lines and secondary nucleation which corresponds to the nucleation of carbon islands at the edges...

  11. Molecular designing of precursors for chemical vapor deposition

    International Nuclear Information System (INIS)

    Both tin oxide and antimony oxide, can act as gas sensing material whose activity/selectivity is enhanced by the incorporation of a second metal. We are interested in the formation of bimetallic and trimetallic carboxylates and alkoxides which can be used as single source precursors for such mixed metal oxides. Sb(dmae)/sub 3/ (dmae=OCH/sub 2/CH/sub 2/(CH/sub 3/)sub 2/ has been prepared from Sb(OC/sub 2/H/sub 5/)/sub 3/ and Hdmae and used to generate the bimetallic materials Sb(dmae)/sub 3/Cd(acac)/sub 2/. Sn(acac)/sub 2/ hydrolyses to yield crystalline cage Sn/sub 4/O/sub 6/(dmae)/sub 4/. Sn(dmae)/sub 2/ can also be used to generate bimetallic materials such as [Sn(dmae)/sub 2/ Cd(acac)/sub 2/]/sub 2/]. Bimetallic and trimetallic carboxylates of general formula [R/sub 3/Ge-CHRCH/sub 2/COO]/sub 4-n/SnRn. [Where R=CH/sub 3/, C/sub 2/H/sub 5/, C/sub 6/H/sub 5/, tolyl, cyclohexyl, (CH/sub 3/)/sub 3/ Si CH/sub 2/-etc.] have been prepared and characterized by various analytic techniques. Chemical vapor deposition using Sb(dmae)/sub 3/ Cd(acac)/sub 2/ and various bimetallic carboxylates yield thin films of Cd/sub 2/Sb/sub 2/O/sub 7/ and SnOGeO respectively. (author)

  12. Review of chemical vapor deposition of graphene and related applications.

    Science.gov (United States)

    Zhang, Yi; Zhang, Luyao; Zhou, Chongwu

    2013-10-15

    Since its debut in 2004, graphene has attracted enormous interest because of its unique properties. Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications since the method was first reported in 2008/2009. In this Account, we review graphene CVD on various metal substrates with an emphasis on Ni and Cu. In addition, we discuss important and representative applications of graphene formed by CVD, including as flexible transparent conductors for organic photovoltaic cells and in field effect transistors. Growth on polycrystalline Ni films leads to both monolayer and few-layer graphene with multiple layers because of the grain boundaries on Ni films. We can greatly increase the percentage of monolayer graphene by using single-crystalline Ni(111) substrates, which have smooth surface and no grain boundaries. Due to the extremely low solubility of carbon in Cu, Cu has emerged as an even better catalyst for the growth of monolayer graphene with a high percentage of single layers. The growth of graphene on Cu is a surface reaction. As a result, only one layer of graphene can form on a Cu surface, in contrast with Ni, where more than one layer can form through carbon segregation and precipitation. We also describe a method for transferring graphene sheets from the metal using polymethyl methacrylate (PMMA). CVD graphene has electronic properties that are potentially valuable in a number of applications. For example, few-layer graphene grown on Ni can function as flexible transparent conductive electrodes for organic photovoltaic cells. In addition, because we can synthesize large-grain graphene on Cu foil, such large-grain graphene has electronic properties suitable for use in field effect transistors. PMID:23480816

  13. Simplified Monte Carlo simulations of chemical vapour deposition diamond growth

    International Nuclear Information System (INIS)

    A simple one-dimensional Monte Carlo model has been developed to simulate the chemical vapour deposition (CVD) of a diamond (100) surface. The model considers adsorption, etching/desorption, lattice incorporation, and surface migration along and across the dimer rows. The top of a step-edge is considered to have an infinite Ehrlich-Schwoebel potential barrier, so that mobile surface species cannot migrate off the edge. The reaction probabilities are taken from experimental or calculated literature values for standard CVD diamond conditions. The criterion used for the critical nucleus needed to form a new layer is considered to be two surface carbon species bonded together, which forms an immobile, unetchable step on the surface. This nucleus can arise from two migrating species meeting, or from direct adsorption of a carbon species next to a migrating species. The analysis includes film growth rate, surface roughness, and the evolving film morphology as a function of varying reaction probabilities. Using standard CVD diamond parameters, the simulations reveal that a smooth film is produced with apparent step-edge growth, with growth rates (∼1 μm h-1) consistent with experiment. The β-scission reaction was incorporated into the model, but was found to have very little effect upon growth rates or film morphology. Renucleation events believed to be due to reactive adsorbates, such as C atoms or CN groups, were modelled by creating random surface defects which form another type of critical nucleus upon which to nucleate a new layer. These were found to increase the growth rate by a factor of ∼10 when the conditions were such that the rate-limiting step for growth was new layer formation. For other conditions these surface defects led to layered 'wedding cake' structures or to rough irregular surfaces resembling those seen experimentally during CVD of nanocrystalline diamond.

  14. Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Teo, K. B. K.; Hash, D. B.; Bell, M. S.; Chhowalla, M.; Cruden, B. A.; Amaratunga, G. A. J.; Meyyappan, M.; Milne, W. I.

    2005-01-01

    Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.

  15. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

    International Nuclear Information System (INIS)

    We have used backscattering spectrometry and 15N(1H,α,γ)12C nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) technique from mixtures of precursors argon, nitrous oxide, and silane at deposition temperature 90 deg. C. The deposition pressure and nitrous oxide-to-silane gas flow rates ratio have been found to have a pronounced influence on the composition of the films. When the deposition pressure was varied for a given nitrous oxide-to-silane gas flow ratio, the amount of silicon and nitrogen increased with the deposition pressure, while the amount of oxygen decreased. For a given deposition pressure, the amount of incorporated nitrogen and hydrogen decreased while that of oxygen increased with increasing nitrous oxide-to-silane gas flow rates ratio. For nitrous oxide-to-silane gas flow ratio of 5, we obtained films which contained neither chemically bonded nor nonbonded nitrogen atoms as revealed by the results of infrared spectroscopy, backscattering spectrometry, and nuclear reaction analysis. Our results demonstrate the nitrogen-free nearly stoichiometric silicon dioxide films can be prepared from a mixture of precursors argon, nitrous oxide, and silane at low substrate temperature using high-density PECVD technique. This avoids the use of a hazardous and an often forbidden pair of silane and oxygen gases in a plasma reactor

  16. Inhomogeneous Chemical Evolution of the Galaxy in the Solar Neighbourhood

    Indian Academy of Sciences (India)

    S. Sahijpal

    2013-12-01

    -body numerical simulations of an inhomogeneous Galactic Chemical Evolution (GCE) of the solar neighbourhood with a high temporal resolution are presented. The solar annular ring is divided into distinct spatial grids of area ∼ 1–2 kpc2. Each grid evolves distinctly in terms of star formation and nucleosynthetic yields from numerous generations of stars. The evolution of the galaxy is simulated by considering discrete episodes of star formation. Subsequent to the evolution of the simulated stars within each grid the stellar nucleosynthetic yields are homogenized within the grid rather than the traditionally adopted criteria of homogenizing over the entire solar annular ring. This provides a natural mechanism of generating heterogeneities in the elemental abundance distribution of stars. A complex chemical evolutionary history is inferred that registers episodes of time-dependent contributions from SN II+Ib/c with respect to SN Ia. It was observed that heterogeneities can remerge even after episodes of large scale homogenizations on scales larger than the grid size. However, a comparison of the deduced heterogeneities with the observed scatter in the elemental abundances of the dwarf stars suggest only a partial match, specifically, for [Fe/H] > -0.5. The deduced heterogeneities in the case of carbon, oxygen, magnesium, silicon, sulphur, calcium and titanium can explain the observed heterogeneities for [Fe/H] < -0.5. It may not be possible to explain the entire observed spread exclusively on the basis of the inhomogeneous GCE.

  17. Polyimide (PI) films by chemical vapor deposition (CVD): Novel design, experiments and characterization

    OpenAIRE

    Puig-Pey González, Jaime; Lamure, Alain; Senocq, François

    2007-01-01

    International audience Polyimide (PI) has been deposited by chemical vapor deposition (CVD) under vacuum over the past 20 years. In the early nineties, studies, experiences and characterization were mostly studied as depositions from the co-evaporation of the dianhydride and diamine monomers. Later on, several studies about its different applications due to its interesting mechanical and electrical properties enhanced its development. Nowadays, not many researches around PI deposition are ...

  18. Effect of PECVD deposition parameters on structural and optoelectronics properties of hydrogenated polymorphous silicon thin films deposited by dichlorosilane for implementation in solar cells

    International Nuclear Information System (INIS)

    Hydrogenated polymorphous silicon (pm-Si: H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD) using SiH2Cl2 as precursor gas. We examine the effect of deposition pressure (250 y 500 mTorr) and H2 dilution (flow rates 25, 50, 75 y 100 sccm) on the structural and optoelectronics properties. The nano-structural properties was confirmed by Raman spectroscopy studies in terms of the changes in crystallite sizes and their volume fractions. On the other hand, by FTIR analysis we notice bond configurations associated to photostability of the nanostructures, which was confirmed by Light soaking experiments during 250h. We found a tunable band gap and important behaviors on the electronic transport properties measurements for samples with high and low incorporation of oxygen whose compositions were determined by XPS measurements. Understanding structural and chemical properties of pm- Si: H thin films is key towards optimizing their electrical and optical properties for applications in solar cells. (full text)

  19. SYNTHESIS OF CARBON NANOSTRUCTURES BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION AT ATMOSPHERIC PRESSURE

    OpenAIRE

    Jašek Ondřej; Synek Petr; Zajíčková Lenka; Eliáš Marek; Kudrle Vít

    2010-01-01

    Carbon nanostructures present leading field in nanotechnology research. Wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. The selection of the ideal growth process depends on the application. Most of PECVD tech...

  20. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    Science.gov (United States)

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers. PMID:27479495

  1. Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

    KAUST Repository

    Roelofs, Katherine E.

    2013-03-21

    Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

  2. Kinematic and chemical components in the solar neighbourhood

    Directory of Open Access Journals (Sweden)

    Navarro J.F.

    2012-02-01

    Full Text Available Abundance data on solar neighbourhood stars suggest the presence of chemically-distinct stellar components in the solar neighbourhood. When the abundances of Fe, α elements, and the r-process element Eu are considered together, stars separate neatly into two groups that delineate the thin and thick disk components of the Milky Way. The group akin to the thin disk is traced by stars of relatively high Fe content and low [α/Fe] ratios. The thick disk-like group overlaps the thin disk in [Fe/H] but has higher abundances of α elements and Eu. Fe-poor stars with low [α/Fe] ratios, however, seem to belong to a separate, dynamically-cold, non-rotating component likely associated with debris from past accretion events. The kinematically-hot stellar halo dominates the sample at the metal-poor end. These results suggest that it may be possible to define the main dynamical components of the solar neighbourhood using only their chemistry, an approach with a number of interesting consequences. For example, the average rotation speed and velocity dispersion of thin disk stars is roughly independent of metallicity, a result unexpected in most current theories of thin-disk formation. In this scenario, the familiar increase in the velocity dispersion of disk stars with decreasing metallicity is the result of the increasing prevalence of the thick disk at lower metallicities, rather than of the sustained operation of a dynamical heating mechanism. The substantial overlap in [Fe/H] and, likely, stellar age, of the various components might affect other reported trends in the properties of stars in the solar neighbourhood. A purely chemical characterization of these components allows the use of their kinematics to assess their origin, an powerful approach denied to traditional ways of apportioning stars to the various Galactic components.

  3. Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

    International Nuclear Information System (INIS)

    In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 3800C and 4200C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

  4. Laser diagnostics of chemical vapour deposition of diamond films

    International Nuclear Information System (INIS)

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH4 / H2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH3, NH and C2H2 in a hot filament (HF) activated gas mixture and CH, C2 and C2H2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (∼1013 molecules / cm3) sufficient for it to play an important role in the diamond film growth, with CH approximately equivalent in abundance. The average gas temperatures of both C2 and CH radicals in the DC arc jet are found to be 3200 ± 300 K in the free flowing plasma plume, as measured from Boltzmann plots and Doppler line widths. Both number densities and gas temperatures rise significantly within 5 mm of the substrate surface in what is termed the boundary layer. Temperatures rise to 4800 ± 400 K within 1 mm from the substrate surface where the average C2 and CH concentrations are a factor of approximately four greater than in the free flowing plume. The effects of changing process parameters such as methane fraction in the feed gas and activation input power on number densities and temperatures have also been investigated. In addition to these advances in our understanding of the diamond CVD process, a new spectroscopic technique, continuous wave cavity ring down spectroscopy (cw CRDS) using tuneable, continuous wave diode lasers, has

  5. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  6. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    International Nuclear Information System (INIS)

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σdark changed by 5 order of magnitude under illumination, Vd was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH4, H2, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σRT), activation energy (Ea), and optical band gap (Eg). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications

  7. Enhancing performance of amorphous SiGe single junction solar cells by post-deposition thermal annealing

    International Nuclear Information System (INIS)

    In this work, amorphous silicon-germanium (a-SiGe:H) p-i-n single junction solar cells are fabricated using a 40 MHz plasma-enhanced chemical vapor deposition system. Their s-curve characteristics were observed by current density-voltage measurements. Thermal annealing of cells at 150 °C in a vacuum effectively overcame the s-curve behavior. Additionally, comparing the external quantum efficiency spectra of annealed samples with those of as-deposited samples revealed that the spectral response of annealed cells was higher in the long wavelength range (600 ∼ 900 nm). Raman spectroscopy and electrical conductivity analyses revealed that the n-type microcrystalline silicon (n-μc-Si:H) layers of as-deposited cells were not optimal. Experimental results indicate that the i/n barrier heights of the as-deposited and annealed samples were 0.31 eV and 0.20 eV , respectively. The high energy barrier implies that the bad collection ability of charge carriers near the i/n interfaces of solar cells. An energy conversion efficiency of 6.38% was achieved after post-deposition annealing. The improvement in efficiency is concluded to have been caused largely by retention of n-μc-Si:H layers of high crystallinity and electrical conductivity after annealing. - Highlights: ► Demonstration of thermal annealing in overcoming the s-curve behavior. ► Annealing treatments lead to better n-type microcrystalline silicon thin films. ► Energy conversion efficiency of 6.38% was achieved after post-deposition annealing

  8. Fabrication of CdTe solar cells by laser-driven physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bhat, A.; Tabory, C.; Liu, S.; Nguyen, M.; Aydinli, A.; Tsien, L.H.; Bohn, R.G. (Toledo Univ., OH (USA). Dept. of Physics and Astronomy)

    1991-05-01

    Polycrystalline cadmium sulfide-cadmium telluride heterojunction solar cells were fabricated for the first time using a laser-driven physical vapor deposition method. An XeCl excimer laser was used to deposit both of the II-VI semiconductor layers in a single vacuum chamber from pressed powder targets. Results are presented from optical absorption. Raman scattering, X-ray diffraction, and electrical characterization of the films. Solar cells were fabricated by deposition onto SnO{sub 2}-coated glass with top contacts produced by gold evaporation. Device performance was evaluated from the spectral quantum efficiency and current-voltage measurements in the dark and with air mass 1.5 solar illumination. (orig.).

  9. Spray-deposited ITO-CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Adeeb, N.; Kretsu, I.V.; Sherban, D.A.; Simashkevich, A.V.; Sushkevich, K.D.

    1987-01-01

    The properties of an indium-tin-oxide (ITO)/CdTe solar cell fabricated by spraying an alcolholic solution of indium chloride and tin chloride on n-type single crystal CdTe, have been investigated by measuring the electrical and photoelectrical properties of the device. The maximum sensitivity of the cells in the visible range attains 0.42 A/W. The efficiency of the solar cells without antireflection coating at AM1 condition is 6.2%. Detailed numerical calculations have been made for the effect of interface state density and localized charges in the interfacial layer on the performance of the cell. 21 refs.

  10. µc-Si solar cells by direct deposition with APCVD

    Czech Academy of Sciences Publication Activity Database

    Rachow, T.; Ledinský, Martin; Janz, S.; Reber, S.; Fejfar, Antonín

    München: WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG, 2012 - (Nowak, S.), s. 2386-2392 ISBN 3-936338-28-0. [European Photovoltaic Solar Energy Conference and Exhibition (PVSEC) /17./. Frankfurt (DE), 24.09.2012-28.09.2012] R&D Projects: GA MŠk 7E10061; GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 240826 - POLYSIMODE Institutional research plan: CEZ:AV0Z10100521 Keywords : epitaxy * thin film solar cell * a-Si/µ-Si * microcrystalline silicon * Si film Subject RIV: BM - Solid Matter Physics ; Magnetism

  11. Metallization on FDM Parts Using the Chemical Deposition Technique

    Directory of Open Access Journals (Sweden)

    Azhar Equbal

    2014-08-01

    Full Text Available Metallization of ABS (acrylonitrile-butadiene-styrene parts has been studied on flat part surfaces. These parts are fabricated on an FDM (fused deposition modeling machine using the layer-wise deposition principle using ABS as a part material. Electroless copper deposition on ABS parts was performed using two different surface preparation processes, namely ABS parts prepared using chromic acid for etching and ABS parts prepared using a solution mixture of sulphuric acid and hydrogen peroxide (H2SO4/H2O2 for etching. After surface preparations using these routes, copper (Cu is deposited electrolessly using four different acidic baths. The acidic baths used are 5 wt% CuSO4 (copper sulfate with 15 wt% of individual acids, namely HF (hydrofluoric acid, H2SO4 (sulphuric acid, H3PO4 (phosphoric acid and CH3COOH (acetic acid. Cu deposition under different acidic baths used for both the routes is presented and compared based on their electrical performance, scanning electron microscopy (SEM and energy dispersive X-ray spectrometry (EDS. The result shows that chromic acid etched samples show better electrical performance and Cu deposition in comparison to samples etched via H2SO4/H2O2.

  12. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  13. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    We clarify the difference between the SiH4 consumption efficiency η and the SiH4 depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH4 consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH4 concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH4 concentration in the plasma cp, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH4 density measurements throughout the ignition and the termination of a plasma

  14. Chemical deposition of selenium layers for selenization of sputtered and electrodeposited Cu–Zn–Sn metallic layers for photovoltaic application

    International Nuclear Information System (INIS)

    One of the key steps for high efficiency kesterite based solar cells is the control of the growth conditions of the kesterite phase from precursors. In this work, chemical deposition was used to introduce the selenium needed for Cu–Zn–Sn selenization and Cu2ZnSnSe4 (CZTSe) synthesis. The influence of annealing time and precursor morphology based on deposition techniques (electrodeposition or sputtering) on the reaction path and kinetics of growth and degradation of kesterite phase was studied using scanning electron microscopy, X-ray diffraction and Raman characterizations. Important differences were detected between porous electrodeposited precursors and dense sputtered precursors. It was suggested that this difference comes from the morphology of the precursors, and that a control of the morphology is critical for the control of the annealing processes in CZTSe synthesis. - Highlights: • Cu–Zn–Sn metallic precursors deposited by co-sputtering and co-electrodeposition • Annealing of Cu2ZnSnSe4 (CZTSe) using chemical deposition of Se layer • Kinetics of the formation and decomposition of CZTSe • Role of the morphology and composition of precursors on the CZTSe properties

  15. Chemical deposition of selenium layers for selenization of sputtered and electrodeposited Cu–Zn–Sn metallic layers for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Delbos, Sebastien; Benmoussa, Marya; Bodeux, Romain; Gougaud, Corentin; Naghavi, Negar, E-mail: negar.naghavi@edf.fr

    2015-08-31

    One of the key steps for high efficiency kesterite based solar cells is the control of the growth conditions of the kesterite phase from precursors. In this work, chemical deposition was used to introduce the selenium needed for Cu–Zn–Sn selenization and Cu{sub 2}ZnSnSe{sub 4} (CZTSe) synthesis. The influence of annealing time and precursor morphology based on deposition techniques (electrodeposition or sputtering) on the reaction path and kinetics of growth and degradation of kesterite phase was studied using scanning electron microscopy, X-ray diffraction and Raman characterizations. Important differences were detected between porous electrodeposited precursors and dense sputtered precursors. It was suggested that this difference comes from the morphology of the precursors, and that a control of the morphology is critical for the control of the annealing processes in CZTSe synthesis. - Highlights: • Cu–Zn–Sn metallic precursors deposited by co-sputtering and co-electrodeposition • Annealing of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) using chemical deposition of Se layer • Kinetics of the formation and decomposition of CZTSe • Role of the morphology and composition of precursors on the CZTSe properties.

  16. The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mikolášek, Miroslav, E-mail: miroslav.mikolasek@stuba.sk [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Nemec, Michal; Kováč, Jaroslav [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Foti, Marina; Gerardi, Cosimo [IMS-R and D, STMicroelectronics, Stradale Primosole, 50, 95121 Catania (Italy); Mannino, Giovanni; Valenti, Luca; Lombardo, Salvatore [CNR-IMM, Zona Industriale, Ottava Strada, 5, 95121 Catania (Italy)

    2014-11-15

    Highlights: • We studied the impact of the thermal annealing on the silicon heterojunction solar cells. • Compared were samples deposited by ICP-CVD and PE-CVD methods. • Annealing up to 250 °C improves output performance of both solar cells. • Annealing above 250 °C increases defect states density at the interface and in the amorphous emitter. • Samples deposited by ICP-CVD shows better resistance against annealing. - Abstract: This paper presents a comparative study of the influence of post-deposition annealing on amorphous silicon/crystalline silicon heterojunction solar cells deposited by ICP-CVD and PE-CVD techniques. Two major effects on the solar cell efficiency occur caused by thermal annealing. The first effect is a slight improvement of the performance on annealing up to 250 °C. The second effect, for annealing temperatures above 250 °C, reveals deterioration of the solar cell performance. It is suggested that both effects are related to thermally activated diffusion of hydrogen. For low annealing temperatures, diffusion of weakly bonded hydrogen allows to passivate the defects in the amorphous emitter and at the heterointerface. In the high temperature annealing region, outdiffusion of hydrogen is assumed to be responsible for an increase of defect states in the structures. The results indicate a better stability after high temperature treatment for the sample prepared by ICP-CVD technology.

  17. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Energy Technology Data Exchange (ETDEWEB)

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  18. CdTeO3 Deposited Mesoporous NiO Photocathode for a Solar Cell

    OpenAIRE

    Chuan Zhao; Xiaoping Zou; Sheng He

    2014-01-01

    Semiconductor sensitized NiO photocathodes have been fabricated by successive ionic layer adsorption and reaction (SILAR) method depositing CdTeO3 quantum dots onto mesoscopic NiO films. A solar cell using CdTeO3 deposited NiO mesoporous photocathode has been fabricated. It yields a photovoltage of 103.7 mV and a short-circuit current density of 0.364 mA/cm2. The incident photon to current conversion efficiency (IPCE) value is found to be 12% for the newly designed NiO/CdTeO3 solar cell. It s...

  19. Influences of deposition temperature on characteristics of B-doped ZnO films deposited by metal–organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Boron-doped zinc oxide films were fabricated by metal–organic chemical vapor deposition at deposition temperatures (Td) from 150 to 210 °C. The deposition rate increases abruptly and monotonically with increasing Td. The resistivity also varies drastically, and a minimum resistivity of 1.6 × 10−3Ω cm is obtained at Td = 175 °C. The crystal orientation and surface texture show Td dependence. These characteristics correlate with each other. The dependence of these characteristics on Td is caused by the reactivity of the source materials. - Highlights: • Transparent conducting boron-doped zinc oxide films were deposited and characterized. • Comparing various characteristics, these characteristics correlate each other. • These characteristics were influenced by chemical vapor reactions strongly

  20. Fabrication of Isotropic Pyrocarbon at 1400℃ by Thermal Gradient Chemical Vapor Deposition Apparatus

    Institute of Scientific and Technical Information of China (English)

    GUO Lingjun; ZHANG Dongsheng; LI Kezhi; LI Hejun

    2009-01-01

    An experiment was designed to prepare isotropic pyrocarbon by thermal gradient chemical vapor deposition apparatus.The deposition was performed under ambient atmosphere at 1400℃,with natural gas volume flow of 3.5 m~3/h for 80 h.The results show that the thickness and the bulk density of the deposit are about 1.95 g/cm~3 and 10 mm,respectively.The microstructure of the deposit was examined by polarized light microscopy and scanning electron microscopy,which shows that the deposit is constituted of sphere isotropic pyrocarbon,pebble pyrocarbon and laminar pyrocarbon.

  1. The power source effect on SiO{sub x} coating deposition by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Junfeng [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China); Chen Qiang, E-mail: chenqiang@bigc.edu.c [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China); Zhang Yuefei; Liu Fuping; Liu Zhongwei [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China)

    2009-05-29

    SiOx coatings were prepared by capacitively coupled plasma enhanced chemical vapor deposition on polyethyleneterephtalate substrates in 23 kHz middle-frequency and radio frequency power supplies, respectively, where hexamethyldisiloxane was used as gas source. The influences of discharge conditions on gas phase intermediate species and active radicals for SiOx formation was investigated by mass spectrometry as real-time in-situ diagnosis. The deposited SiOx coating chemical structures were also analyzed by Fourier transform infrared spectroscopy. Meanwhile, the film barrier property, oxygen transmission rate, was measured at 23 {sup o}C and 50% humidity circumstance. The better barrier property was obtained in the MF power source depositing SiOx coated PET.

  2. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    Science.gov (United States)

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  3. Effect of deposition temperature on boron-doped carbon coatings deposited from a BCl3-C3H6-H2 mixture using low pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    A mixture of propylene, hydrogen and boron trichloride was used to fabricate boron-doped carbon coatings by using low pressure chemical vapor deposition (LPCVD) technique. Effect of deposition temperature on deposition rate, morphologies, compositions and bonding states of boron-doped carbon coatings was investigated. Below 1273 K, the deposition rate is controlled by reaction dynamics. The deposition rate increases with increasing deposition temperature. The activation energy is 208.74 kJ/mol. Above 1273 K, the deposition rate decreases due to smaller critical radius rc and higher nuclei formation rate J with increasing temperature. Scanning electron microscopy shows that the structure changes from glass-like to nano-laminates with increasing deposition temperature. The boron concentration decreases with increasing deposition temperature, corresponding with increasing carbon concentration. The five types of bonding states are B-C, B-sub-C, BC2O, BCO2 and B-O. B-sub-C and BC2O are the main bonding states. The reactions are dominant at all temperatures, in which the B-sub-C and PyC are formed.

  4. Hot wire CVD deposition of nanocrystalline silicon solar cells on rough substrates

    OpenAIRE

    Li, H. B. T.; van der Werf, C.H.M.; J.K. Rath; Schropp, R.E.I.

    2009-01-01

    In silicon thin film solar cell technology, frequently rough or textured substrates are used to scatter the light and enhance its absorption. The important issue of the influence of substrate roughness on silicon nanocrystal growth has been investigated through a series of nc-Si:H single junction p-i-n solar cells containing i-layers deposited with Hot-wire CVD. It is shown that silicon grown on the surface of an unoptimized rough substrate contains structural defects, which deteriorate solar...

  5. Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline Si films for thin film photovoltaic applications

    International Nuclear Information System (INIS)

    P-type nanocrystalline Si (p-nc-Si) films were deposited by hot-wire chemical vapor deposition (HWCVD) system using SiH4, B2H6, and H2 as reactants. The effect of H2 flow rate on the material properties of p-nc-Si films were investigated using Raman spectroscopy, X-ray diffractormeter, ultraviolet–visible-near infrared spectrophotometer, Fourier transform infrared spectroscopy, field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). Moreover, the electrical properties, such as carrier concentration, activation energy, dark conductivity, and Hall mobility, of p-nc-Si films were also measured. It was found that H2 flow rate played an important role in forming of p-nc-Si, decreasing the deposition rate, and increasing the crystallinity of p-nc-Si films. FESEM and TEM micrographs also showed the enhancement of crystallinity with adding H2 flow rate. Furthermore, the change of microstructure at various H2 flow rates was found to affect the electrical properties of p-nc-Si films. Details of the growth mechanism in p-nc-Si films will be discussed also. Moreover, the optimum p-nc-Si film was used as window layer in n-type crystalline Si heterojunction (HJ) solar cell. After the deposition parameters were optimized, the Si HJ solar cell with the open-circuit voltage of 0.58 V, short-circuit current density of 33.46 mA/cm2, fill factor of 64.44%, and the conversion efficiency of 12.5% could be obtained. - Highlights: ► p-nc-Si films prepared by hot-wire chemical vapor deposition. ► H2 flow rate had an important role in decreasing the deposition rate of p-nc-Si films. ► H2 flow rate had an important role in increasing the crystallinity of p-nc-Si films. ► Change of microstructure found to affect the electrical properties of p-nc-Si films. ► A simple Si heterojunction solar cell with a conversion efficiency of 12.5 % was achieved.

  6. Light conversion materials for solar cells by atomic layer deposition

    OpenAIRE

    2014-01-01

    There are many different solar cell technologies which aim at producing electricity from sunlight cheap and/or efficient. As the efficiency of silicon cells is slowly but continuously climbing, price plummeting, and production skyrocketing, there is in my opinion little room for other technologies unless they can beat silicon on efficiency. Commercial cells at over 20 % efficiency are available and lab cells have been reported at above 27 %. Comparing this to the theoretical maximum efficienc...

  7. Low pressure chemical vapor deposition of niobium coating on silicon carbide

    International Nuclear Information System (INIS)

    Nb coatings were prepared on a SiC substrate by low pressure chemical vapor deposition using NbCl5. Thermodynamic calculations were performed to study the effect of temperature and partial pressure of NbCl5 on the final products. The as-deposited coatings were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy. The Nb coatings are oriented and grow in the preferred (2 0 0) plane and (2 1 1) plane, at 1173 K and 1223-1423 K, respectively. At 1123-1273 K, the deposition is controlled by the surface kinetic processes. The activation energy is found to be 133 kJ/mol. At 1273-1373 K, the deposition is controlled by the mass transport processes. The activation energy is found to be 46 kJ/mol. The growth mechanism of the chemical vapor deposited Nb is also discussed based on the morphologies and the deposition rates.

  8. Bifacial solar cell with SnS absorber by vapor transport deposition

    International Nuclear Information System (INIS)

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  9. Bifacial solar cell with SnS absorber by vapor transport deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wangperawong, Artit [Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Faculty of Engineering, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F., E-mail: sbent@stanford.edu [Stanford University, Stanford, California 94305 (United States)

    2014-10-27

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  10. Bifacial solar cell with SnS absorber by vapor transport deposition

    Science.gov (United States)

    Wangperawong, Artit; Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F.

    2014-10-01

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  11. Electro-Optical Properties of Carbon Nanotubes Obtained by High Density Plasma Chemical Vapor Deposition

    OpenAIRE

    Ana Paula Mousinho; Ronaldo D. Mansano

    2011-01-01

    In this work, we studied the electro-optical properties of high-aligned carbon nanotubes deposited at room temperature. For this, we used the High Density Plasma Chemical Vapor Deposition system. This system uses a new concept of plasma generation: a planar coil is coupled to an RF system for plasma generation. This was used together with an electrostatic shield, for plasma densification, thereby obtaining high-density plasmas. The carbon nanotubes were deposited using pure methane plasmas. T...

  12. Sealing of micromachined cavities using chemical vapor deposition methods: characterization and optimization

    OpenAIRE

    Liu, Chang; Tai, Yu-Chong

    1999-01-01

    This paper presents results of a systematic investigation to characterize the sealing of micromachined cavities using chemical vapor deposition (CVD) methods. We have designed and fabricated a large number and variety of surface-micromachined test structures with different etch-channel dimensions. Each cavity is then subjected to a number of sequential CVD deposition steps with incremental thickness until the cavity is successfully sealed. At etch deposition interval, the sealing status of ev...

  13. Chemical deposition in CdSe thin films using cadmium trithanolamine complex

    Energy Technology Data Exchange (ETDEWEB)

    Eid, A.H.; Mahmoud, S. (National Research centre, Dokki, Cairo (EG). Dept. of Electron Microscopy and Thin Films)

    1992-07-01

    Thin layers of metal chalcogenides are important for photovoltaic cells, photoconductors and other electro-optical devices. These materials can be obtained in thin-layer form by sputtering, spray pyrolysis, vacuum deposition and sintering. Chemical deposition is the simplest way of obtaining thin layers of high quality and good reproducibility. In the recent work the triethanolamine (TEA) complex of Cd{sup 2+} ion was used for CdSe thin-film deposition. (author).

  14. Plasma enhanced chemical vapor deposition of zirconium nitride thin films

    International Nuclear Information System (INIS)

    Depositions of high quality zirconium nitride, (Zr3N4), films using the metal-organic precursor Zr(NEt2)4 were carried out in a microwave argon/ammonia plasma (2.45 GHz). The films were deposited on crystalline silicon wafers and quartz substrates at temperatures of 200--400 C. The transparent yellow films have resistivity values greater than MΩ cm. The stoichiometry is N/Zr = 1.3, with less than 5 atom % carbon and little or no oxygen. The hydrogen content is less than 9 atom %, and it does not vary with deposition temperature. The growth rates range from 600 to 1,200 angstrom/min, depending on the flow rates and precursor bubbler temperature. X-ray diffraction studies show a Zr3N4 film deposited at 400 C is polycrystalline with some (220) orientation. The crystallite size is approximately 30 angstrom. The band gap, as estimated from transmission spectra, is 3.1 eV

  15. Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

    OpenAIRE

    Jourdain, Vincent; Bichara, Christophe

    2013-01-01

    Due to its higher degree of control and its scalability, catalytic chemical vapour deposition is now the prevailing synthesis method of carbon nanotubes. Catalytic chemical vapour deposition implies the catalytic conversion of a gaseous precursor into a solid material at the surface of reactive particles or of a continuous catalyst film acting as a template for the growing material. Significant progress has been made in the field of nanotube synthesis by this method although nanotube samples ...

  16. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  17. Titanium-based coatings on copper by chemical vapor deposition in fluidized bed reactors

    International Nuclear Information System (INIS)

    Titanium, TiN and TiOx coatings were deposited on copper and Cu-Ni alloys by chemical vapor deposition in fluidized bed reactors. These coatings provide the copper with a tenfold increase in corrosion resistance in chloride aqueous environments, as determined by a.c. impedance studies. (orig.)

  18. Effect of deposition pressure on the properties of magnetron-sputter-deposited molybdenum back contacts for CIGS solar cells

    Science.gov (United States)

    Li, Weimin; Yan, Xia; Aberle, Armin G.; Venkataraj, Selvaraj

    2015-08-01

    Molybdenum (Mo) thin films were deposited onto soda-lime glass substrates by DC magnetron sputtering of a Mo target at various chamber pressures ranging from 1.5 × 10-3 to 7.5 × 10-3 mbar. The film properties were analysed with regards to their application as back electrode in copper indium gallium diselenide (CIGS) solar cells. It is observed that the resulting film morphology and microstructure were strongly affected by deposition pressure. Mo films deposited at a low pressure possess a high density and a low sheet resistance. These films also have a compact microstructure and a compressive strain, which lead to poor adhesion. The adhesion can be improved by increasing the chamber pressure, which has negative effects on the sheet resistance, optical reflection and porosity of the films. On the basis of these results, a method has been established to fabricate low-resistivity Mo films on soda-lime glass with very good adhesion for CIGS solar cell applications.

  19. Electron emission from nano-structured carbon films fabricated by hot-filament chemical-vapor deposition and microwave plasma-enhanced chemical vapor deposition

    CERN Document Server

    Park, K H; Lee, K M; Oh, S G; Lee, S I; Koh, K H

    2000-01-01

    The electron-emission characteristics of nano-structured carbon films fabricated by using the HFCVD (hot- filament chemical-vapor deposition) and the MPECVD (microwave plasma-enhanced chemical-vapor deposition) methods with a metal catalyst are presented. According to our observation, neither the formation nor the alignment of nano tubes is absolutely necessary to realize carbon-based electron emitters. However, utilization of chrome as an interlayer between Si substrates and metal catalyst particles results in a great improvement in the emission characteristics and the mechanical stability. Also, fabrication of good electron-emitting carbon films on glass substrates, with sputter-deposited chrome electrodes,at a nominal temperature approx 615 .deg. C was demonstrated.

  20. Chemical vapour deposition of vanadium oxide thermochromic thin films

    OpenAIRE

    Piccirillo, Clara

    2012-01-01

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thi...

  1. PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    M. Hofmann

    2008-01-01

    Full Text Available A novel plasma-enhanced chemical vapour deposited (PECVD stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing and below 30 cm/s (after forming gas anneal were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.

  2. Solar Flux Deposition And Heating Rates In Jupiter's Atmosphere

    Science.gov (United States)

    Perez-Hoyos, Santiago; Sánchez-Lavega, A.

    2009-09-01

    We discuss here the solar downward net flux in the 0.25 - 2.5 µm range in the atmosphere of Jupiter and the associated heating rates under a number of vertical cloud structure scenarios focusing in the effect of clouds and hazes. Our numerical model is based in the doubling-adding technique to solve the radiative transfer equation and it includes gas absorption by CH4, NH3 and H2, in addition to Rayleigh scattering by a mixture of H2 plus He. Four paradigmatic Jovian regions have been considered (hot-spots, belts, zones and Polar Regions). The hot-spots are the most transparent regions with downward net fluxes of 2.5±0.5 Wm-2 at the 6 bar level. The maximum solar heating is 0.04±0.01 K/day and occurs above 1 bar. Belts and zones characterization result in a maximum net downward flux of 0.5 Wm-2 at 2 bar and 0.015 Wm-2 at 6 bar. Heating is concentrated in the stratospheric and tropospheric hazes. Finally, Polar Regions are also explored and the results point to a considerable stratospheric heating of 0.04±0.02 K/day. In all, these calculations suggest that the role of the direct solar forcing in the Jovian atmospheric dynamics is limited to the upper 1 - 2 bar of the atmosphere except in the hot-spot areas. Acknowledgments: This work has been funded by Spanish MEC AYA2006-07735 with FEDER support and Grupos Gobierno Vasco IT-464-07.

  3. Chemical Vapour Deposition of Graphene with Re-useable Pt and Cu substrates for Flexible Electronics

    Science.gov (United States)

    Karamat, Shumaila; Sonusen, Selda; Celik, Umit; Uysalli, Yigit; Oral, Ahmet

    2015-03-01

    Graphene has gained the attention of scientific world due to its outstanding physical properties. The future demand of flexible electronics such as solar cells, light emitting diodes, photo-detectors and touch screen technology requires more exploration of graphene properties on flexible substrates. The most interesting application of graphene is in organic light emitting diodes (OLED) where efforts are in progress to replace brittle indium tin oxide (ITO) electrode with a flexible graphene electrode because ITO raw materials are becoming increasingly expensive, and its brittle nature makes it unsuitable for flexible devices. In this work, we grow graphene on Pt and Cu substrates using chemical vapour deposition (CVD) and transferred it to a polymer material (PVA) using lamination technique. We used hydrogen bubbling method for separating graphene from Pt and Cu catalyst to reuse the substrates many times. After successful transfer of graphene on polymer samples, we checked the resistivity values of the graphene sheet which varies with growth conditions. Furthermore, Raman, atomic force microscopy (AFM), I-V and Force-displacement measurements will be presented for these samples.

  4. CdTe-based solar cells prepared by physical vapor deposition and close-spaced sublimation methods

    International Nuclear Information System (INIS)

    Full text : In the photovoltaic material family, cadmium telluride is regarded as one of the most promising material for fabrication of high efficiency polycrystalline CdTe/CdS thin film solar cells because of its near-optimum band gap of about 1.46 eV and high optical absorption coefficient in visible range. The maximum efficiency of about 16.5 percent of the laboratory samples of polycrystalline CdTe based thin film solar cells was achieved by using nanostructured CdS:O window layer and the modified device structure. In spite of the large lattice mismatch between cubic CdTe and hexagonal CdS (nearly 9.7 percent) the CdTe/CdS solar cells are characterized by essentially high efficiencies caused by interdiffusion at the junction interface removing the lattice mismatch. To identify the structural mechanisms leading to the solar cell efficiency increase we have studied the effect of CdCl2 treatment on the output parameters of CdS/CdTe-based solar cells and crystal structure of the base layers deposited on glass substrates by different ways. In the first way both of CdS and CdTe layers were deposited by physical vapor deposition (PVD) method meanwhile in the second way the chemical bath deposition (CBD) and close-spaced sublimation (CSS) methods were used for CdS and CdTe films deposition, respectively. For the PVD structures. The average grain size of the film increases from 1 μm to 4 μm due to the lattice strain caused by macrodeformations and stacking faults. The maximum efficiency (ηA=10.3 percent) of solar cells on the basis of cadmium telluride layers deposited by PVD method corresponds to 0,35 μm CdRl2 thickness at CdCl2 treatment. CBD/CSS samples were exposed to CdCl2 vapor at 400 degrees Celsium for 5-7 min in vacuum chamber in the presence of 100 torr oxygen and 400 torr helium. As-grown CdTe films were characterized by clearly faceted surface morphology and an average grain size of about 3-4 μm. Unlike the thermally evaporated CdTe films, no

  5. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    Energy Technology Data Exchange (ETDEWEB)

    Deelen, J. van, E-mail: joop.vandeelen@tno.nl [TNO, Department of Thin Film Technology, De Rondom 1, 5612 AP Eindhoven (Netherlands); Illiberi, A.; Kniknie, B.; Beckers, E.H.A. [TNO, Department of Thin Film Technology, De Rondom 1, 5612 AP Eindhoven (Netherlands); Simons, P.J.P.M.; Lankhorst, A. [Celsian, De Rondom 1, 5612 AP Eindhoven (Netherlands)

    2014-03-31

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/min were obtained. The reaction kinetics were studied and detailed process modeling based on a reaction mechanism that includes the formation of an alkylzinc alkoxide intermediate product is discussed. This mechanism can explain the temperature dependent variety in deposition profiles observed in the static deposition experiments. The capability of modeling to gain insight in the local process conditions inside a reactor is demonstrated. - Highlights: • ZnO deposition at high rates of 800 nm/min • Modeling based on two step mechanism gives good fit. • Modeling gives insight in the inside of the reactor. • Modeling can even predict static deposition profiles.

  6. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    International Nuclear Information System (INIS)

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/min were obtained. The reaction kinetics were studied and detailed process modeling based on a reaction mechanism that includes the formation of an alkylzinc alkoxide intermediate product is discussed. This mechanism can explain the temperature dependent variety in deposition profiles observed in the static deposition experiments. The capability of modeling to gain insight in the local process conditions inside a reactor is demonstrated. - Highlights: • ZnO deposition at high rates of 800 nm/min • Modeling based on two step mechanism gives good fit. • Modeling gives insight in the inside of the reactor. • Modeling can even predict static deposition profiles

  7. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  8. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor depositionDeposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  9. Graphene growth with giant domains using chemical vapor deposition

    OpenAIRE

    Yong, Virginia; Hahn, H. Thomas

    2011-01-01

    We report the first demonstration of the growth of giant graphene domains on platinum (Pt), which results in a uniform bilayer graphene film with domain sizes of millimetre scale. These giant graphene domains are attributed to the giant Pt grains attained in post-deposition annealed Pt thin films that exhibit a strong dependency on the Pt film thickness. Giant grains have been claimed to occur in other metallic materials under appropriate film thicknesses and processing conditions. Our findin...

  10. Aluminium nitride coatings preparation using a chemical vapour deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Armas, B.; Combescure, C.; Icaza Herrera, M. de; Sibieude, F. [Centre National de la Recherche Scientifique (CNRS), 66 - Font-Romeu (France). Inst. de Science et du Genie des Materiaux et des Procedes

    2000-07-01

    Aluminium nitride was obtained in a cold wall reactor using AlCl{sub 3} and NH{sub 3} as precursors and N{sub 2} as a carrier gas. AlCl{sub 3} was synthesized << in situ >> by means of an original method based on the reaction of SiCl{sub 4(g)} with Al{sub (S)}. The substrate used was a cylinder of graphite coated with SiC and heated by high frequency induction. The deposition rate was studied as a function of temperature in the range 900 - 1500 C, the total pressure varying from 2 to 180 hPa. At low temperatures an Arrhenius type representation of the kinetics for several pressures indicated a thermally activated process with an apparent activation energy of about 80 kJ.mol{sup -1}. At high deposition temperatures, the deposition rate was almost constant, indicating that the growth was controlled by a diffusion process. The influence of gas composition and total AlCl{sub 3} flow rate was also discussed. The different layers were characterised particularly by means of X-ray diffraction and SEM. The influence of temperature and total pressure on crystallization and morphology was studied. (orig.)

  11. Hydrazine-Free Solution-Deposited CuIn(S,Se)2 Solar Cells by Spray Deposition of Metal Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Arnou, Panagiota; van Hest, Maikel F. A. M.; Cooper, Carl S.; Malkov, Andrei V.; Walls, John M.; Bowers, Jake W.

    2016-05-18

    Solution processing of semiconductors, such as CuInSe2 and its alloys (CIGS), can significantly reduce the manufacturing costs of thin film solar cells. Despite the recent success of solution deposition approaches for CIGS, toxic reagents such as hydrazine are usually involved, which introduce health and safety concerns. Here, we present a simple and safer methodology for the preparation of high-quality CuIn(S, Se)2 absorbers from metal sulfide solutions in a diamine/dithiol mixture. The solutions are sprayed in air, using a chromatography atomizer, followed by a postdeposition selenization step. Two different selenization methods are explored resulting in power conversion efficiencies of up to 8%.

  12. Physical properties of nitrogen-doped diamond-like amorphous carbon films deposited by supermagnetron plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Diamond-like amorphous carbon films doped with nitrogen (DAC:N) were deposited on Si and glass wafers intermittently using i-C4H10/N2 repetitive supermagnetron plasma chemical vapor deposition. Deposition duration, which is equal to a plasma heating time of wafer, was selected to be 40 or 60 s, and several layers were deposited repetitively to form one thick film. DAC:N films were deposited at a lower-electrode temperature of 100 deg. C as a function of upper- and lower-electrode rf powers (200 W/200 W-1 kW/1 kW) and N2 concentration (0%-80%). With an increase in N2 concentration and rf power, the resistivity and the optical band gap decreased monotonously. With increase of the deposition duration from 40 to 60 s, resistivity decreased to 0.03Ω cm and optical band gap decreased to 0.02 eV (substantially equal to 0 eV within the range of experimental error), at an N2 concentration of 80% and rf power of 1 kW(/1 kW)

  13. Metal organic chemical vapor deposition of environmental barrier coatings for the inhibition of solid deposit formation from heated jet fuel

    Science.gov (United States)

    Mohan, Arun Ram

    Solid deposit formation from jet fuel compromises the fuel handling system of an aviation turbine engine and increases the maintenance downtime of an aircraft. The deposit formation process depends upon the composition of the fuel, the nature of metal surfaces that come in contact with the heated fuel and the operating conditions of the engine. The objective of the study is to investigate the effect of substrate surfaces on the amount and nature of solid deposits in the intermediate regime where both autoxidation and pyrolysis play an important role in deposit formation. A particular focus has been directed to examining the effectiveness of barrier coatings produced by metal organic chemical vapor deposition (MOCVD) on metal surfaces for inhibiting the solid deposit formation from jet fuel degradation. In the first part of the experimental study, a commercial Jet-A sample was stressed in a flow reactor on seven different metal surfaces: AISI316, AISI 321, AISI 304, AISI 347, Inconel 600, Inconel 718, Inconel 750X and FecrAlloy. Examination of deposits by thermal and microscopic analysis shows that the solid deposit formation is influenced by the interaction of organosulfur compounds and autoxidation products with the metal surfaces. The nature of metal sulfides was predicted by Fe-Ni-S ternary phase diagram. Thermal stressing on uncoated surfaces produced coke deposits with varying degree of structural order. They are hydrogen-rich and structurally disordered deposits, spherulitic deposits, small carbon particles with relatively ordered structures and large platelets of ordered carbon structures formed by metal catalysis. In the second part of the study, environmental barrier coatings were deposited on tube surfaces to inhibit solid deposit formation from the heated fuel. A new CVD system was configured by the proper choice of components for mass flow, pressure and temperature control in the reactor. A bubbler was designed to deliver the precursor into the reactor

  14. Chemical vapor deposition and characterization of titanium dioxide thin films

    Science.gov (United States)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  15. Parameters influencing the deposition of methylammonium lead halide iodide in hole conductor free perovskite-based solar cells

    OpenAIRE

    Bat-El Cohen; Shany Gamliel; Lioz Etgar

    2014-01-01

    Perovskite is a promising light harvester for use in photovoltaic solar cells. In recent years, the power conversion efficiency of perovskite solar cells has been dramatically increased, making them a competitive source of renewable energy. An important parameter when designing high efficiency perovskite-based solar cells is the perovskite deposition, which must be performed to create complete coverage and optimal film thickness. This paper describes an in-depth study on two-step deposition, ...

  16. V2O5 thin film deposition for application in organic solar cells

    Science.gov (United States)

    Arbab, Elhadi A. A.; Mola, Genene Tessema

    2016-04-01

    Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

  17. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    Science.gov (United States)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  18. An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chu Juan [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); Jin Zhengguo, E-mail: zhgjin@tju.edu.cn [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Cai Shu [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Yang Jingxia [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Hong Zhanglian, E-mail: hong_zhanglian@zju.edu.cn [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2012-01-01

    Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV-Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm-19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.

  19. An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

    International Nuclear Information System (INIS)

    Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV–Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm–19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.

  20. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    Science.gov (United States)

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  1. ZnS thin film deposited with chemical bath deposition process directed by different stirring speeds

    International Nuclear Information System (INIS)

    In this combined film thickness, scanning electron microscopy (SEM), X-ray diffraction and optical properties study, we explore the effects of different stirring speeds on the growth and optical properties of ZnS film deposited by CBD method. From the disclosed changes of thickness of ZnS film, we conclude that film thickness is independent of the stirring speeds in the heterogeneous process (deposition time less than 40 min), but increases with the stirring speeds and/or deposition time increasing in the homogeneous process. Grazing incident X-ray diffraction (GIXRD) and the study of optical properties disclosed that the ZnS films grown with different stirring speeds show partially crystallized film and exhibit good transmittance (70-88% in the visible region), but the stirring speeds cannot give much effects on the structure and optical properties in the homogeneous process.

  2. Selective epitaxial Si based layers and TiSi 2 deposition by integrated chemical vapor deposition

    Science.gov (United States)

    Regolini, J. L.; Margail, J.; Bodnar, S.; Maury, D.; Morin, C.

    1996-07-01

    High performance IC manufacturing requirements, such as large diameter wafer uniformity, reproducibility, throughput and reliability can be fulfilled by commercial integrated processing, single wafer cluster tools. This paper presents results obtained on an industrial cluster reactor for 200 mm wafers by combining epitaxial silicon related materials and selective deposition of TiSi 2. Low temperature epitaxial Si and SiGe alloys are studied for buried thin layers used in CMOS and HBT devices. The doping profile abruptness for B and P are within SIMS resolution limits. TheTiSi 2/Si selective deposition is also investigated, sequentially and in situ, as a technique for future salicidedS/D with a reduction in technological steps and interface contamination. Statistical electrical results obtained using 0.35 and 0.25 μm CMOS technologies in which the CVD silicide deposition is tested, are presented and compared with the standard salicide technique.

  3. Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor

    Energy Technology Data Exchange (ETDEWEB)

    Song Xuemei; Gopireddy, Deepthi [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G. [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)], E-mail: takoudis@uic.edu

    2008-07-31

    In this study, we investigate the use of an amide-based Ti-containing precursor, namely tetrakis(diethylamido)titanium (TDEAT), for TiN{sub x}O{sub y} film deposition at low temperature. Traditionally, alkoxide-based Ti-containing precursor, such as titanium tetra-isopropoxide (TTIP), along with NH{sub 3} is used for titanium oxynitride (TiN{sub x}O{sub y}) film deposition. When TTIP is used, at low temperatures it is difficult to form TiN{sub x}O{sub y} films with high N/O ratios. In this study, by using TDEAT, TiN{sub x}O{sub y} films are deposited on H-passivated Si (100) substrates in a cold wall reactor at 300 {sup o}C and 106 Pa. Rutherford backscattering spectroscopy analysis shows nitrogen incorporation in the TiN{sub x}O{sub y} films to be as high as 28 at.%. X-ray photoelectron spectroscopy analysis of as-deposited films confirms the formation of{sub .} TiN{sub x}O{sub y}, while Fourier transform infrared and Raman spectra indicate that the films have amorphous structure. Moreover, there is no detectable bulk carbon impurity and no SiO{sub 2} formation at the TiN{sub x}O{sub y}/Si interface. Upon annealing the as-deposited films in air at 750 deg. C for 30 min, they oxidize to TiO{sub 2} and crystallize to form a rutile structure with a small amount of anatase phase. Based on these results, TDEAT appears to be a promising precursor for both TiN{sub x}O{sub y} and TiO{sub 2} film deposition.

  4. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki

    protective layers of tantalum because of the process’ ability to coat complex geometries and its relative ease to control. This work focuses on studying the CVD of tantalum in long narrow channels with the view that the knowledge gained during the project can be used to optimise the commercial coating...... that there is a major change in morphology between 850 – 900 °C. The effects of system pressure and precursor partial pressure are also studied, and were found to have relevance to the tantalum distribution along the substrates but little effect on the structural morphology of the deposited layer. In...

  5. Coating of ceramic powders by chemical vapor deposition techniques (CVD)

    International Nuclear Information System (INIS)

    New ceramic materials with selected advanced properties can be designed by coating of ceramic powders prior to sintering. By variation of the core and coating material a large number of various powders and ceramic materials can be produced. Powders which react with the binder phase during sintering can be coated with stable materials. Thermal expansion of the ceramic materials can be adjusted by varying the coating thickness (ratio core/layer). Electrical and wear resistant properties can be optimized for electrical contacts. A fluidized bed reactor will be designed which allow the deposition of various coatings on ceramic powders. (author)

  6. Fabrication and characterization of indium sulfide thin films deposited on SAMs modified substrates surfaces by chemical bath deposition

    International Nuclear Information System (INIS)

    In an effort to explore the optoelectronic properties of nanostructured indium sulfide (In2S3) thin films for a wide range of applications, the In2S3 thin films were successfully deposited on the APTS layers (-NH2-terminated) modified ITO glass substrates using the chemical bath deposition technique. The surface morphology, structure and composition of the resultant In2S3 thin films were characterized by FESEM, XRD, and XPS, respectively. Also, the correlations between the optical properties, photocurrent response and the thickness of thin films were established. According to the different deposition mechanisms on the varying SAMs terminational groups, the positive and negative micropatterned In2S3 thin films were successfully fabricated on modified Si substrates surface combining with the ultraviolet lithography process. This offers an attractive opportunity to fabricate patterned In2S3 thin films for controlling the spatial positioning of functional materials in microsystems.

  7. Damage mechanisms in thin film solar cells during sputtering deposition of transparent conductive coatings

    International Nuclear Information System (INIS)

    Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process

  8. High-efficiency micromorph silicon solar cells with in-situ intermediate reflector deposited on various rough LPCVD ZnO

    OpenAIRE

    Dominé, D.; Buehlmann, P; Bailat, J.; Billet, A.; Feltrin, A.; Ballif, C.

    2008-01-01

    Light management using intermediate reflector layers (IRL) and advanced front transparent conductive oxide (TCO) morphologies is needed to rise the short-circuit current density (Jsc) of micromorph tandem solar cells above 14 mA/cm2. For micromorph cells deposited on surface-textured ZnO layers grown by low-pressure chemical vapour deposition (LPCVD), we study the interplay between the front TCO layer and the IRL and its impact on fill factor and current matching conditions. The key role of t...

  9. Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Meier, J.; Kroll, U.; Spitznagel, J. [Unaxis SPTec, Neuchatel (Switzerland); Vallat-Sauvain, E.; Graf, U.; Shah, A. [Institut de Microtechnique, Neuchatel (Switzerland)

    2004-12-01

    During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called 'very high frequency glow discharge (VHF-GD)' technique, a method that leads to a considerable enhancement in the deposition rate of amorphous and microcrystalline silicon layers. As a direct consequence of reduced plasma impedances at higher plasma excitation frequencies, silane dissociation is enhanced and the maximum energy of ions bombarding the growing surface is reduced. Due to softer ion bombardment on the growing surface, the VHF process also favours the formation of microcrystalline silicon. Based on these beneficial properties of VHF plasmas, for the growth of thin silicon films, plasma excitation frequencies f{sub exc} in the range 30-300 MHz, i.e. clearly higher than the standard 13.56 MHz, are indeed scheduled to play an important role in future production equipment. (2) In 1994, IMT pioneered a novel thin-film solar cell, the microcrystalline silicon solar cell. This new type of thin-film absorber material - a form of crystalline silicon - opens up the way for a new concept, the so-called 'micromorph' tandem solar cell concept. This term stands for the combination of a microcrystalline silicon bottom cell and an amorphous silicon top cell. Thanks to the lower band gap and to the stability of microcrystalline silicon solar cells, a better use of the full solar spectrum is possible, leading, thereby, to higher efficiencies than those obtained with solar cells based solely on amorphous silicon. Both the VHF-GD deposition technique and the 'micromorph' tandem solar cell concept are considered to be essential for future thin-film PV modules, as they bear the potential for combining high-efficiency devices with low-cost manufacturing processes. (author)

  10. Comparison of optical coatings deposited by novel physical and chemical techniques

    International Nuclear Information System (INIS)

    The authors have undertaken a systematic study of various methods of depositing good quality thin films of optically interesting materials by different physical and chemical methods in an effort to identify promising techniques for producing low-absorbing, low-scatter, high damage-threshold coatings. The deposition methods studied include e-beam deposition in a UHV environment, sol-gel processes utilizing hot isostatic pressing (HIP) to densify the films, photochemical deposition using organometallic reagents entrained in inert or potentially reactive gas flows, and ion-beam deposition in a reactive environment. The deposited single-layer films were analyzed using various surface analysis techniques to provide information on film composition, stoichiometry, and impurity level

  11. Two dimensional transition metal dichalcogenides grown by chemical vapor deposition

    OpenAIRE

    Tsang, Ka-yi; 曾家懿

    2014-01-01

    An atomically thin film of semiconducting transition metal dichalcogenides (TMDCs) is emerging as a class of key materials in chemistry and physics due to their remarkable chemical and electronic properties. The TMDCs are layered materials with weak out-of-plane van der Waals (vdW) interaction and strong in-plane covalent bonding enabling scalable exfoliation into two-dimensional (2D) layers of atomic thickness. The growth techniques to prepare these 2D TMDC materials in high yield and large ...

  12. Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid

    Indian Academy of Sciences (India)

    A Mefoued; M Fathi; J Bhatt; A Messaoud; B Palahouane; N Benrekaa

    2011-12-01

    In this study, we have improved electrical characteristics such as the efficiency () and the fill factor (FF) of finished multicrystalline silicon (-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These -Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on -type -Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

  13. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  14. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    Science.gov (United States)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  15. Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization

    International Nuclear Information System (INIS)

    Nanocrystalline silicon carbide (SiC) thin films were deposited by plasma enhanced chemical vapor deposition technique at different deposition temperatures (Td) ranging from 80 to 575 deg. C and different gas flow ratios (GFRs). While diethylsilane was used as the source for the preparation of SiC films, hydrogen, argon and helium were used as dilution gases in different concentrations. The effects of Td, GFR and dilution gases on the structural and optical properties of these films were investigated using high resolution transmission electron microscope (HRTEM), micro-Raman, Fourier transform infrared (FTIR) and ultraviolet-visible optical absorption techniques. Detailed analysis of the FTIR spectra indicates the onset of formation of SiC nanocrystals embedded in the amorphous matrix of the films deposited at a temperature of 300 deg. C. The degree of crystallization increases with increasing Td and the crystalline fraction (fc) is 65%±2.2% at 575 deg. C. The fc is the highest for the films deposited with hydrogen dilution in comparison with the films deposited with argon and helium at the same Td. The Raman spectra also confirm the occurrence of crystallization in these films. The HRTEM measurements confirm the existence of nanocrystallites in the amorphous matrix with a wide variation in the crystallite size from 2 to 10 nm. These results are in reasonable agreement with the FTIR and the micro-Raman analysis. The variation of refractive index (n) with Td is found to be quite consistent with the structural evolution of these films. The films deposited with high dilution of H2 have large band gap (Eg) and these values vary from 2.6 to 4.47 eV as Td is increased from 80 to 575 deg. C. The size dependent shift in the Eg value has also been investigated using effective mass approximation. Thus, the observed large band gap is attributed to the presence of nanocrystallites in the films

  16. Chemical Weathering of New Pyroclastic Deposits from Mt. Merapi (Java), Indonesia

    Energy Technology Data Exchange (ETDEWEB)

    Fiantis, Dian; Nelson, Malik; Van Ranst, Eric; Shamshudin, Josup; Qafoku, Nikolla

    2009-09-01

    Java Island, Indonesia with abundant amount of pyroclastic deposits is located in the very active and dynamic Pacific Ring of Fires. Studying the geochemical weathering indices of these pyroclastic deposits is important to get a clear picture about weathering profiles on deposits resulting from the eruption of Mt. Merapi. Immediately after the first phase of the eruption (March to June 2006), moist and leached pyroclastic deposits were collected. These pyroclastic deposits were found to be composed of volcanic glass, plagioclase feldspar in various proportions, orthopyroxene, clinopyroxene, olivine, amphibole, and titanomagnetite. Total elemental composition of the bulk samples (including trace elements and heavy metals) were determined by wet chemical methods and X-ray fluorescence (XRF) analyses. Weathering of the pyroclastic deposits was studied using various weathering indices. The Ruxton ratio, weathering index of Parker, Vought resudual index and chemical index of weathering of moist pyroclastic are lower than the leached sample but the alteration indices (chemical and plagioclase) are slightly higher in the moist compared to the leached pyroclastic deposits.

  17. Impact of nanocrystal spray deposition on inorganic solar cells.

    Science.gov (United States)

    Townsend, Troy K; Yoon, Woojun; Foos, Edward E; Tischler, Joseph G

    2014-05-28

    Solution-synthesized inorganic cadmium telluride nanocrystals (∼4 nm; 1.45 eV band gap) are attractive elements for the fabrication of thin-film-based low-cost photovoltaic (PV) devices. Their encapsulating organic ligand shell enables them to be easily dissolved in organic solvents, and the resulting solutions can be spray-cast onto indium-tin oxide (ITO)-coated glass under ambient conditions to produce photoactive thin films of CdTe. Following annealing at 380 °C in the presence of CdCl2(s) and evaporation of metal electrode contacts (glass/ITO/CdTe/Ca/Al), Schottky-junction PV devices were tested under simulated 1 sun conditions. An improved PV performance was found to be directly tied to control over the film morphology obtained by the adjustment of spray parameters such as the solution concentration, delivery pressure, substrate distance, and surface temperature. Higher spray pressures produced thinner layers (CdTe spray deposition was then applied to heterojunction devices (ITO/CdTe/ZnO/Al) to reach 3.0% efficiency after light soaking under forward bias. The film thickness, surface morphology, and light absorption were examined with scanning electron microscopy, optical profilometry, and UV/vis spectroscopy. PMID:24755091

  18. Thin-film solar cells from sputtered and vapor-deposited amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, W.; Ruebel, H.; Iselborn, S.; Arenas, G.; Wagner, C.; Schroeder, B.; Geiger, J.

    1984-01-01

    The properties of sputtered and evaporated a-Si:H, and the application of this material for the preparation of solar cells were investigated. Correlations are found between the photoelectrical properties of the films and the amount and bonding configuration of the hydrogen incorporated, both influencing the film structure. Optimally passivated sputtered material containing 10 at % hydrogen is deposited for preparation of Schottky and pin-type solar cells. Conversion efficiencies 2% are measured. A possible efficiency of 5% is calculated taking the best values obtained for cell parameters. Progress in the defect passivation of reactively evaporated a-Si:H films is reported. (ESA)

  19. Poly(3-hexylthiophene) films by electrospray deposition for crystalline silicon/organic hybrid junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hiate, Taiga; Miyauchi, Naoto; Tang, Zeguo; Ishikawa, Ryo; Ueno, Keiji; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 858-3676 (Japan)

    2012-10-15

    The electrospray deposition (ESD) of poly(3-hexylthiophene) (P3HT) and conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on P3HT for use in crystalline silicon/organic hybrid heterojunction solar cells on CZ crystalline silicon (c-Si) (100) wafer was investigated using real-time characterization by spectroscopic ellipsometry (SE). In contrast to the nonuniform deposition of products frequently obtained by conventional spin-coating, a uniform deposition of P3HT and PEDOT:PSS films were achieved on flat and textured hydrophobic c-Si(100) wafers by adjusting the deposition conditions. The c-Si/P3HT/PEDOT:PSS heterojunction solar cells exhibited efficiencies of 4.1 and 6.3% on flat and textured c-Si(100) wafers, respectively. These findings suggest that ESD is a promising method for the uniform deposition of P3HT and PEDOT:PSS films on flat and textured hydrophobic substrates. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. (Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells

    KAUST Repository

    Tétreault, Nicolas

    2011-01-01

    Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al 2O 3, ZnO, SnO 2, Nb 2O 5, HfO 2, Ga 2O 3 and TiO 2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy. ©The Electrochemical Society.

  1. Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Evolution of chemical bonding configurations for the films deposited from hexamethyldisiloxane (HMDSO) diluted with H2 during plasma assisted chemical vapour deposition is investigated. In the experiment a small amount of CH4 was added to adjust the plasma environment and modify the structure of the deposited films. The measurements of Raman spectroscopy and X-ray diffraction (XRD) revealed the production of 6H-SiC embedded in the amorphous matrix without the input of CH4. As CH4 was introduced into the deposition reaction, the transition of 6H-SiC to cubic SiC in the films took place, and also the film surfaces changed from a structure of ellipsoids to cauliflower-like shapes. With a further increase of CH4 in the flow ratio, the obtained films varied from Si-C bonding dominant to a sp2/sp3 carbon-rich composition. (low temperature plasma)

  2. Metastable phase formation during chemical vapor deposition of niobium-germanium films

    International Nuclear Information System (INIS)

    Regularities of different metastable phase formation during chemical vapor deposition of niobium-germanium coatings were investigated. These coatings were deposited on wire and band metal substrates by method of chemical transport reactions with the use of iodine as transporting agent. It was shown that it was possible to deposite the metastable Nb5Ge3 phase with structure of T2 type and X phase with cubic structure and hypothetical Nb2Ge composition during iodide process using Nb3Ge alloy as initial material together with phases existing at state diagram. Metastable T2 and X phases are formed only at high total pressure (more 250-500 Pa) and deposition rate less 1 μm/min. Coatings on the base of Nb3Ge with germanium content from 11 to 23 at.% were obtained

  3. Discrete formulation of mixed finite element methods for vapor deposition chemical reaction equations

    Institute of Scientific and Technical Information of China (English)

    LUO Zhen-dong; ZHOU Yan-jie; ZHU Jiang

    2007-01-01

    The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical modes by the following governing nonlinear partial differential equations containing velocity vector,temperature field,pressure field,and gas mass field.The mixed finite element(MFE)method is employed to study the system of equations for the vapor deposition chemical reaction processes.The semidiscrete and fully discrete MFE formulations are derived.And the existence and convergence(error estimate)of the semidiscrete and fully discrete MFE solutions are deposition chemical reaction processes,the numerical solutions of the velocity vector,the temperature field,the pressure field,and the gas mass field can be found out simultaneonsly.Thus,these researches are not only of important theoretical means,but also of extremely extensive applied vistas.

  4. Selective light induced chemical vapour deposition of titanium dioxide thin films

    OpenAIRE

    Wagner, Estelle; Hoffmann, Patrik

    2005-01-01

    Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substrate temperature, allowing even the use of polymer substrates. A home made LICVD reactor was set up, consisting of a main chamber in which the substrate was placed on a temperature controlled plate and could be irradiated perpendicularly thro...

  5. Selective light induced chemical vapour deposition of titanium dioxide thin films

    OpenAIRE

    Wagner, Estelle

    2003-01-01

    Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substrate temperature, allowing even the use of polymer substrates. A home made LICVD reactor was set up, consisting of a main chamber in which the substrate was placed on a temperature controlled plate and could be irradiated perpendicularly thro...

  6. Super-Hydrophobic and Oloephobic Crystalline Coatings by Initiated Chemical Vapor Deposition

    OpenAIRE

    Coclite, Anna Maria; Shi, Yujun; Gleason, Karen K.

    2013-01-01

    Preferred crystallographic orientation (texture) in thin films frequently has a strong effect on the properties of the materials and it is important for stable surface properties. Organized molecular films of poly-perfluorodecylacrylate p(PFDA) were deposited by initiated Chemical Vapor Deposition (iCVD). The high tendency of p(PFDA) to crystallize has been fully retained in the polymers prepared by iCVD. The degree of crystallinity and the preferred orientation of the perfluoro side chains, ...

  7. Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure

    OpenAIRE

    Croonen, Y.; Verspui, G.

    1993-01-01

    Laser induced Chemical Vapour Deposition of a wide variety of materials has been studied extensively at reduced pressures. However, for this technique to be economically and industrially applicable, processes at atmospheric pressure are preferred. A model study was made on the substrate-coating system molybdenum-titaniumnitride focussing on the feasibility to deposit TiN films locally at atmospheric pressure. The results of this study turned out to be very promising. A Nd-YAG laser beam ([MAT...

  8. Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Vertically aligned ZnO films were deposited on n-InP by metalorganic chemical vapour deposition. X-ray diffraction, field emission scanning electron microscopy and photoluminescence measurements demonstrated that the ZnO films had good quality. By evaporating AuZn electrodes on both ZnO and InP surfaces, a ZnO-based light emitting device was fabricated. Under forward voltage, weak green emissions can be observed in darkness

  9. Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Huichao [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang Baolin [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Li Xiangping [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Dong Xin [State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116023 (China); Li Wancheng [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Guan Hesong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Cui Yongguo [State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116023 (China); Xia Xiaochuan [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Yang Tianpeng [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Chang Yuchun [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Du Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2007-09-07

    Vertically aligned ZnO films were deposited on n-InP by metalorganic chemical vapour deposition. X-ray diffraction, field emission scanning electron microscopy and photoluminescence measurements demonstrated that the ZnO films had good quality. By evaporating AuZn electrodes on both ZnO and InP surfaces, a ZnO-based light emitting device was fabricated. Under forward voltage, weak green emissions can be observed in darkness.

  10. Remote Microwave Plasma Enhanced Chemical Vapour Deposition of SiO2 Films : Oxygen Plasma Diagnostic

    OpenAIRE

    Regnier, C.; Desmaison, J.; Tristant, P.; Merle, D.

    1995-01-01

    Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). The silica films are produced by exciting oxygen in a microwave discharge while a mixture of 5% of silane diluted in argon is introduced downstream. In the afterglow, double Langmuir probe measurements and rotational temperatures deduced from optical emission spectroscopy (OES), show that the electron energy is transferred to the gas when the pressure increases (19 - 26 Pa). Therefore the elec...

  11. Physico-chemical study of the focused electron beam induced deposition process

    OpenAIRE

    Bret, Tristan; Hoffmann, Patrik

    2007-01-01

    The focused electron beam induced deposition process is a promising technique for nano and micro patterning. Electrons can be focused in sub-angström dimensions, which allows atomic-scale resolution imaging, analysis, and processing techniques. Before the process can be used in controlled applications, the precise nature of the deposition mechanism must be described and modelled. The aim of this research work is to present a physical and chemical description of the focused electron beam induc...

  12. High Temperature Nanocomposites For Nuclear Thermal Propulsion and In-Space Fabrication by Hyperbaric Pressure Laser Chemical Vapor Deposition

    Science.gov (United States)

    Maxwell, J. L.; Webb, N. D.; Espinoza, M.; Cook, S.; Houts, M.; Kim, T.

    Nuclear Thermal Propulsion (NTP) is an indispensable technology for the manned exploration of the solar system. By using Hyperbaric Pressure Laser Chemical Vapor Deposition (HP-LCVD), the authors propose to design and build a promising next-generation fuel element composed of uranium carbide UC embedded in a latticed matrix of highly refractory Ta4HfC5 for an NTP rocket capable of sustaining temperatures up to 4000 K, enabling an Isp of up to 1250 s. Furthermore, HP-LCVD technology can also be harnessed to enable 3D rapid prototyping of a variety of materials including metals, ceramics and composites, opening up the possibility of in-space fabrication of components, replacement parts, difficult-to-launch solar sails and panels and a variety of other space structures. Additionally, rapid prototyping with HP-LCVD makes a feasible "live off the land" strategy of interplanetary and interstellar exploration ­ the precursors commonly used in the technology are found, often in abundance, on other solar system bodies either as readily harvestable gas (e.g. methane) or as a raw material that could be converted into a suitable precursor (e.g. iron oxide into ferrocene on Mars).

  13. Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    QU Quan-yan; QIU Wan-qi; ZENG De-chang; LIU Zhong-wu; DAI Ming-jiang; ZHOU Ke-song

    2009-01-01

    The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K-cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

  14. Atmospheric and Aqueous Deposition of Polycrystalline Metal Oxides Using Mist-CVD for Highly Efficient Inverted Polymer Solar Cells.

    Science.gov (United States)

    Zhu, Xiaodan; Kawaharamura, Toshiyuki; Stieg, Adam Z; Biswas, Chandan; Li, Lu; Ma, Zhu; Zurbuchen, Mark A; Pei, Qibing; Wang, Kang L

    2015-08-12

    Large scale, cost-effective processing of metal oxide thin films is critical for the fabrication of many novel thin film electronics. To date, however, most of the reported solution-based techniques require either extended thermal anneals or additional synthetic steps. Here we report mist chemical vapor deposition as a solution-based, readily scalable, and open-air method to produce high-quality polycrystalline metal oxide thin films. Continuous, smooth, and conformal deposition of metal oxide thin films is achieved by tuning the solvent chemistry of Leidenfrost droplets to promote finer control over the surface-local dissociation process of the atomized zinc-bearing precursors. We demonstrate the deposited ZnO as highly efficient electron transport layers for inverted polymer solar cells to show the power of the approach. A highest efficiency of 8.7% is achieved with a fill factor of 73%, comparable to that of conventional so-gel ZnO, which serves as an indication of the efficient vertical transport and electron collection achievable using this material. PMID:26146797

  15. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    Science.gov (United States)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  16. Stress control of plasma enhanced chemical vapor deposited silicon oxide film from tetraethoxysilane

    International Nuclear Information System (INIS)

    Thin silicon dioxide films have been studied as a function of deposition parameters and annealing temperatures. Films were deposited by tetraethoxysilane (TEOS) dual-frequency plasma enhanced chemical vapor deposition with different time interval fractions of high-frequency and low-frequency plasma depositions. The samples were subsequently annealed up to 930 °C to investigate their stress behavior. Films that were deposited in high-frequency dominated plasma were found to have tensile residual stress after annealing at temperatures higher than 800 °C. The residual stress can be controlled to slightly tensile by changing the annealing temperature. High tensile stress was observed during the annealing of high-frequency plasma-deposited films, leading to film cracks that limit the film thickness, as predicted by the strain energy release rate equation. Thick films without cracks were obtained by iterating deposition and annealing to stack multiple layers. A series of wet cleaning experiments were conducted, and we discovered that water absorption in high-frequency plasma-deposited films causes the residual stress to decrease. A ∼40 nm thick low-frequency deposited oxide cap is sufficient to prevent water from diffusing through the film. Large-area free-standing tensile stressed oxide membranes without risk of buckling were successfully fabricated. (technical note)

  17. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    Science.gov (United States)

    Liu, Y.

    2010-02-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modules on a plastic substrate. The first objective includes the development of suitable ZnO:Al TCO for nc Si:H single junction solar cells, fabrication of the aimed micromorph tandem solar cells on glass, and finally the optimization of the nc-Si:H i-layer for the depositions afterwards on Al foil. Chapter 3 addresses the improvement of texture etching of ZnO:Al by studying the HCl etching effect on ZnO:Al films sputter-deposited in a set substrate heater temperature series. With the texture-etched ZnO:Al front TCO, a single junction nc-Si:H solar cell was deposited with an initial efficiency of 8.33%. Chapter 4 starts with studying the light soaking and annealing effects on micromorph tandem solar cell. In the end, a highly stabilized bottom cell current limited tandem cell was made. The tandem shows an initial efficiency of 10.2%, and degraded only 6.9% after 1600 h of light soaking. In Chapter 5, the nc-Si:H i-layers were studied in 3 pressure and inter-electrode distance series. The correlations between plasma physics and the consequent i-layers’ properties are investigated. We show that the Raman crystalline ratio and porosity of the nc-Si:H layer have an interesting relation with the p•d product. By varying p and d, device quality nc-Si:H layer can be deposited at a high rate of 0.6 nm/s. These results in fact are a very important step for the second objective. The second objective is covered by the entire Chapter 6. All silicon layers are deposited on special aluminum

  18. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    OpenAIRE

    Liu, Y

    2010-01-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modu...

  19. Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique

    OpenAIRE

    Meier, Johannes; Kroll, U.; Vallat-Sauvain, Evelyne; Spitznagel, J.; U. Graf; Shah, Arvind

    2008-01-01

    During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called “very high frequency glow discharge (VHF-GD)” technique, a method that leads to a considerable enhancement in the deposition rate of amorphous and microcrystalline silicon layers. As a direct consequence of reduced plasma impedances at higher plasma excitation frequencies, silane dis...

  20. Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Silicon nitride (SiN x) films have been prepared at extremely high deposition rates by the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique on Si(001) wafers from gas mixtures containing He, H2, SiH4 and N2 or NH3. A 150 MHz very high frequency (VHF) power supply was used to generate high-density radicals in the atmospheric pressure plasma. Deposition rate, composition and morphology of the SiN x films prepared with various deposition parameters were studied by scanning electron microscopy and Auger electron spectroscopy. Fourier transformation infrared (FTIR) absorption spectroscopy was also used to characterize the structure and the chemical bonding configurations of the films. Furthermore, etching rate with buffered hydrofluoric acid (BHF) solution, refractive index and capacitance-voltage (C-V) characteristics were measured to evaluate the dielectric properties of the films. It was found that effective passivation of dangling bonds and elimination of excessive hydrogen atoms at the film-growing surface seemed to be the most important factor to form SiN x film with a dense Si-N network. The C-V curve of the optimized film showed good interface properties, although further improvement was necessary for use in the industrial metal-insulator-semiconductor (MIS) applications

  1. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ozaydin-Ince, Gozde, E-mail: gozdeince@sabanciuniv.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Matin, Asif, E-mail: amatin@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Khan, Zafarullah, E-mail: zukhan@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Zaidi, S.M. Javaid, E-mail: zaidismj@kfupm.edu.sa [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gleason, Karen K., E-mail: kkgleasn@mit.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2013-07-31

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling.

  2. Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD)

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Min; Blackman, Chris [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

    2015-07-15

    Aerosol assisted chemical vapour deposition (AACVD) is used to deposit tungsten oxide thin films from tungsten hexacarbonyl (W(CO){sub 6}) at 339 to 358 C on quartz substrate. The morphologies of as-deposited thin films, which are comprised of two phases (W{sub 25}O{sub 73} and W{sub 17}O{sub 47}), vary from planar to nanorod (NR) structures as the distance from the inlet towards the outlet of the reactor is traversed. This is related to variation of the actual temperature on the substrate surface (ΔT = 19 C), which result in a change in growth mode due to competition between growth rate (perpendicular to substrate) and nucleation rate (parallel to substrate). When the ratio of perpendicular growth rate to growth rate contributed by nucleation is higher than 7.1, the as-deposited tungsten oxide thin film forms as NR. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Surface transformations of carbon (graphene, graphite, diamond, carbide), deposited on polycrystalline nickel by hot filaments chemical vapour deposition

    International Nuclear Information System (INIS)

    The deposition of carbon has been studied at high temperature on polycrystalline nickel by hot filaments activated chemical vapor deposition (HFCVD). The sequences of carbon deposition are studied by surface analyses: Auger electron spectroscopy (AES), electron loss spectroscopy (ELS), X-ray photoelectron spectroscopy (XPS) in a chamber directly connected to the growth chamber. A general scale law of the (C/Ni) intensity lines is obtained with a reduced time. Both, shape analysis of the AES C KVV line and the C1s relative intensity suggest a three-step process: first formation of graphene and a highly graphitic layer, then multiphase formation with graphitic, carbidic and diamond-like carbon and finally at a critical temperature that strongly depends on the pretreatment of the polycrystalline nickel surface, a rapid transition to diamond island formation. Whatever the substrate diamond is always the final product and some graphene layers the initial product. Moreover it is possible to stabilize a few graphene layers at the initial sequences of carbon deposition. The duration of this stabilization step is strongly depending however on the pre-treatment of the Ni surface.

  4. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    International Nuclear Information System (INIS)

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling

  5. LASER-INDUCED DECOMPOSITION OF METAL CARBONYLS FOR CHEMICAL VAPOR DEPOSITION OF MICROSTRUCTURES

    OpenAIRE

    Tonneau, D.; Auvert, G.; Pauleau, Y.

    1989-01-01

    Tungsten and nickel carbonyls were used to produce metal microstructures by laser-induced chemical vapor deposition (CVD) on various substrates. The deposition rate of microstructures produced by thermodecomposition of W(CO)6 on Si substrates heated with a cw Ar+ laser beam was relatively low (10 to 30 nm/s) even at high temperatures (above 900°C). Ni microstructures were deposited on quartz substrates irradiated with a CO2 laser beam. Relatively high laser powers were needed to heat the Ni s...

  6. Deposition of air-borne 238Pu near a chemical separation facility

    International Nuclear Information System (INIS)

    Three methods were compared to measure deposition of 238Pu released from a chemical separation facility at the Savannah River Plant, Aiken, SC. The following methods were used: adhesive paper; a collector of rain and dryfall; and soil samples. Excellent agreement among the three methods was found. The measured deposition for the particular source term and meteorological conditions at the Savannah River Plant is described by y proportional to x/sup -1.36/ where y is the pCi of 238Pu deposited per square meter per mC: 238Pu released, and x is distance in meters from the source

  7. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    NI Jie; LI Zhengcao; ZHANG Zhengjun

    2007-01-01

    In this paper,we report a simple approach to synthesize silicon carbide(SiC)nanowires by solid phase source chemical vapor deposition(CVD) at relatively low temperatures.3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates,and the nanowires are 20-80 am in diameter and several μm in length,with a growth direction of[200].The growth of the nanowires agrees well on vapor-liquid-solid (VLS)process and the film deposited on the substrates plays an important role in the formation of nanowires.

  8. Growth of Mg-doped InN by Metal Organic Chemical Vapor Deposition

    Science.gov (United States)

    Khan, N.; Nepal, N.; Lin, J. Y.; Jiang, H. X.

    2007-03-01

    InN with an energy gap of ˜ 0.7 eV, has recently attracted extensive attention due to its potential applications in semiconductor devices such as light emitting diodes, lasers, and high efficiency solar cells. However the ability to grow both p-type and n-type InN is essential to realize these devices. All as grown unintentionally doped InN are n-type. The tendency of native defects in InN to form donors manifests itself severely at surfaces where high levels of electron accumulation are observed. The highly n-type conductive layer at the surface of InN films creates difficulties in the demonstration of p-type InN. Nevertheless it is important to investigate the optical and structural properties of Mg-doped InN. We report here on the growth of Mg-doped InN epilayers by metal organic chemical vapor deposition. Photoluminescence (PL) was employed to study the effects of different growth conditions of Mg-doped InN. PL studies revealed that in addition to emission peak at ˜ 0.82 eV in undoped InN layers, Mg-doped InN layers exhibit an emission peak at ˜ 0.75 eV. The peak at ˜ 0.75eV for Mg-doped InN could be related to defects generated by Mg doping in InN. Various other measurements such as Hall effect measurement, X-ray diffraction and atomic force microscopy were carried out to provide further understanding.

  9. The chemical evolution of a travertine-depositing stream: geochemical processes and mass transfer reactions

    Science.gov (United States)

    Lorah, M.M.; Herman, J.S.

    1988-01-01

    Focuses on quantiatively defining the chemical changes occurring in Falling Spring Creek, a travertine-depositing stream located in Alleghany County, Virgina. The processes of CO2 outgassing and calcite precipitation or dissolution control the chemical evolution of the stream. Physical evidence for calcite precipitation exists in the travertine deposits which are first observed immediately above the waterfall and extend for at least 1.0 km below the falls. Net calcite precipitation occurs at all times of the year but is greatest during low-flow conditions in the summer and early fall. -from Authors

  10. Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

    OpenAIRE

    Sharma, Subash; Kalita, Golap; Vishwakarma, Riteshkumar; Zulkifli, Zurita; Tanemura, Masaki

    2015-01-01

    In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal w...

  11. Metal-AlN cermet solar selective coatings deposited by direct current magnetron sputtering technology

    Science.gov (United States)

    Zhang, Qi-Chu

    1998-02-01

    A series of metal-aluminium nitride (M-AlN) cermet materials for solar selective coatings was deposited by a novel direct current (d.c.) magnetron sputtering technology. Aluminium nitride was used as the ceramic component in the cermets, and stainless steel (SS), nickel-based alloy 0022-3727/31/4/003/img1 (NiCr), molybdenum-based alloy 0022-3727/31/4/003/img2 (TZM) and tungsten were used as the metallic components. The aluminium nitride ceramic and metallic components of the cermets were deposited by simultaneously running both an aluminium target and another metallic target in a gas mixture of argon and nitrogen. The ceramic component was deposited by d.c. reactive sputtering and the metallic component by d.c. non-reactive sputtering. The total sputtering gas pressure was 0.8-1.0 Pa and the partial pressure of reactive nitrogen gas was set at 0.020-0.025 Pa which is sufficiently high to ensure that a nearly pure AlN ceramic sublayer was deposited by d.c. reactive sputtering. Because of the excellent nitriding resistance of stainless steel and the other alloys and metal, a nearly pure metallic sublayer was deposited by d.c. sputtering at this low nitrogen partial pressure. A multilayered system, consisting of alternating metallic and AlN ceramic sublayers, was deposited by substrate rotation. This multisublayer system can be considered as a macrohomogeneous cermet layer with metal volume fraction determined by controlling the thicknesses of metallic and ceramic sublayers. Following this procedure, M-AlN cermet solar selective coatings with a double cermet layer structure were deposited. The films of these selective surfaces have the following structure: a low metal volume fraction cermet layer is placed on a high metal volume fraction cermet layer which in turn is placed on an aluminium metal infrared reflection layer. The top surface layer consists of an aluminium nitride antireflection layer. A solar absorptance of 0.92-0.96 and a normal emittance of 0.03-0.05 at

  12. Differentially pumped spray deposition as a rapid screening tool for organic and perovskite solar cells

    Science.gov (United States)

    Jung, Yen-Sook; Hwang, Kyeongil; Scholes, Fiona H.; Watkins, Scott E.; Kim, Dong-Yu; Vak, Doojin

    2016-01-01

    We report a spray deposition technique as a screening tool for solution processed solar cells. A dual-feed spray nozzle is introduced to deposit donor and acceptor materials separately and to form blended films on substrates in situ. Using a differential pump system with a motorised spray nozzle, the effect of film thickness, solution flow rates and the blend ratio of donor and acceptor materials on device performance can be found in a single experiment. Using this method, polymer solar cells based on poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61 butyric acid methyl ester (PC61BM) are fabricated with numerous combinations of thicknesses and blend ratios. Results obtained from this technique show that the optimum ratio of materials is consistent with previously reported values confirming this technique is a very useful and effective screening method. This high throughput screening method is also used in a single-feed configuration. In the single-feed mode, methylammonium iodide solution is deposited on lead iodide films to create a photoactive layer of perovskite solar cells. Devices featuring a perovskite layer fabricated by this spray process demonstrated a power conversion efficiencies of up to 7.9%. PMID:26853266

  13. Differentially pumped spray deposition as a rapid screening tool for organic and perovskite solar cells

    Science.gov (United States)

    Jung, Yen-Sook; Hwang, Kyeongil; Scholes, Fiona H.; Watkins, Scott E.; Kim, Dong-Yu; Vak, Doojin

    2016-02-01

    We report a spray deposition technique as a screening tool for solution processed solar cells. A dual-feed spray nozzle is introduced to deposit donor and acceptor materials separately and to form blended films on substrates in situ. Using a differential pump system with a motorised spray nozzle, the effect of film thickness, solution flow rates and the blend ratio of donor and acceptor materials on device performance can be found in a single experiment. Using this method, polymer solar cells based on poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61 butyric acid methyl ester (PC61BM) are fabricated with numerous combinations of thicknesses and blend ratios. Results obtained from this technique show that the optimum ratio of materials is consistent with previously reported values confirming this technique is a very useful and effective screening method. This high throughput screening method is also used in a single-feed configuration. In the single-feed mode, methylammonium iodide solution is deposited on lead iodide films to create a photoactive layer of perovskite solar cells. Devices featuring a perovskite layer fabricated by this spray process demonstrated a power conversion efficiencies of up to 7.9%.

  14. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    The costs of manufacturing electrochromic WO3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF6, sputtering cost is dominated by labor and depreciation

  15. Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHAO Guo-Liang; LIN Bi-Xia; HONG Liang; MENG Xiang-Dong; FU Zhu-Xi

    2004-01-01

    ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source used here is zinc acetate, (CHsCOO)2Zn, and the carrier gas is nitrogen. The sample, which was prepared at 550℃ during growth and then annealed in air at 900℃ , has only a ZnO (002) diffraction peak at 34.6° with its FWHM of 0.23° in the XRD pattern. The room-temperature PL spectrum shows a strong ultraviolet emission with the peak centred at 380nm. We analysed the effects of many factors, such as the source, substrates, growth and annealing temperatures, and annealing ambience, on the structural and optical properties of our prepared ZnO films.

  16. Hydrazine-Free Solution-Deposited CuIn(S,Se)2 Solar Cells by Spray Deposition of Metal Chalcogenides.

    Science.gov (United States)

    Arnou, Panagiota; van Hest, Maikel F A M; Cooper, Carl S; Malkov, Andrei V; Walls, John M; Bowers, Jake W

    2016-05-18

    Solution processing of semiconductors, such as CuInSe2 and its alloys (CIGS), can significantly reduce the manufacturing costs of thin film solar cells. Despite the recent success of solution deposition approaches for CIGS, toxic reagents such as hydrazine are usually involved, which introduce health and safety concerns. Here, we present a simple and safer methodology for the preparation of high-quality CuIn(S, Se)2 absorbers from metal sulfide solutions in a diamine/dithiol mixture. The solutions are sprayed in air, using a chromatography atomizer, followed by a postdeposition selenization step. Two different selenization methods are explored resulting in power conversion efficiencies of up to 8%. PMID:27135679

  17. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    International Nuclear Information System (INIS)

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of ∼ 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  18. Titanium dioxide antireflection coating for silicon solar cells by spray deposition

    Science.gov (United States)

    Kern, W.; Tracy, E.

    1980-01-01

    A high-speed production process is described for depositing a single-layer, quarter-wavelength thick antireflection coating of titanium dioxide on metal-patterned single-crystal silicon solar cells for terrestrial applications. Controlled atomization spraying of an organotitanium solution was selected as the most cost-effective method of film deposition using commercial automated equipment. The optimal composition consists of titanium isopropoxide as the titanium source, n-butyl acetate as the diluent solvent, sec-butanol as the leveling agent, and 2-ethyl-1-hexanol to render the material uniformly depositable. Application of the process to the coating of circular, large-diameter solar cells with either screen-printed silver metallization or with vacuum-evaporated Ti/Pd/Ag metallization showed increases of over 40% in the electrical conversion efficiency. Optical characteristics, corrosion resistance, and several other important properties of the spray-deposited film are reported. Experimental evidence indicates a wide tolerance in the coating thickness upon the overall efficiency of the cell. Considerations pertaining to the optimization of AR coatings in general are discussed, and a comprehensive critical survey of the literature is presented.

  19. The Influence of Electrophoretic Deposition for Fabricating Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    Jung-Chuan Chou

    2014-01-01

    Full Text Available Titanium dioxide (TiO2 film was deposited on fluorine-doped tin oxide (FTO glass substrate by electrophoretic deposition method (EPD. TiO2 films were prepared with different I2 dosages, electric field intensities and deposition time (D.T., electrophotic deposition times. By different I2 dosages, electric field intensities, deposition time, electrophotic deposition times fabricated TiO2 films and compared photoelectric characteristics of TiO2 films to find optimal parameters which were the highest photovoltaic conversion efficiency. And use electrochemical impedance spectroscopy (EIS to measure the Nyquist plots under different conditions and analyze the impendence of dye-sensitized solar cells at the internal heterojunction. According to the experimental results, the I2 dosage was 0.025 g which obtained the optimal characteristic parameters. Thickness of TiO2 film was 10.6 μm, the open-circuit voltage (Voc was 0.77 V, the short-circuit current density (Jsc was 7.20 mA/cm2, the fill factor (F.F. was 53.41%, and photovoltaic conversion efficiency (η was 2.96%.

  20. Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

    International Nuclear Information System (INIS)

    Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

  1. Physical properties of chemically deposited Bi2S3 thin films using two post-deposition treatments

    International Nuclear Information System (INIS)

    Highlights: • The post-deposition treatment by Ar plasma is a viable alternative to enhance the optical, electrical, morphological and structural properties of Bi2S3 semiconductor thin films. • The plasma treatment avoids the loss in thickness of the chemically deposited Bi2S3 thin films. • The Eg values were 1.60 eV for the thermally annealed samples and 1.56 eV for the Ar plasma treated samples. • The highest value obtained for the electrical conductivity was 7.7 × 10−2 (Ω cm)−1 in plasma treated samples. - Abstract: As-deposited bismuth sulfide (Bi2S3) thin films prepared by chemical bath deposition technique were treated with thermal annealed in air atmosphere and argon AC plasma. The as-deposited, thermally annealing and plasma treatment Bi2S3 thin films have been characterized by X-ray diffraction (XRD) analysis, atomic force microscopy analysis (AFM), transmission, specular reflectance and electrical measurements. The structural, morphological, optical and electrical properties of the films are compared. The XRD analysis showed that both post-deposition treatments, transform the thin films from amorphous to a crystalline phase. The atomic force microscopy (AFM) measurement showed a reduction of roughness for the films treated in plasma. The energy band gap value of the as-prepared film was Eg = 1.61 eV, while for the film thermally annealed was Eg = 1.60 eV and Eg = 1.56 eV for film treated with Plasma. The electrical conductivity under illumination of the as-prepared films was 3.6 × 10−5 (Ω cm)−1, whereas the conductivity value for the thermally annealed films was 2.0 × 10−3 (Ω cm)−1 and for the plasma treated films the electrical conductivity increases up to 7.7 × 10−2 (Ω cm)−1

  2. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

    OpenAIRE

    Zhu, Wenjuan; Low, Tony; Lee, Yi-Hsien; Wang, Han; Farmer, Damon B.; Kong, Jing; Xia, Fengnian; Avouris, Phaedon

    2013-01-01

    Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic pr...

  3. Growth and properties of few-layer graphene prepared by chemical vapor deposition

    OpenAIRE

    Park, Hye Jin; Meyer, Jannik; Roth, Siegmar; Skakalova, Viera

    2009-01-01

    The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM) images show highly crystalline single layer parts of the sample changing to multilayer domains where crystal boundaries are connected by chemical bonds. This suggests two different growth mechanisms. CVD and carbon segregation participate in the growth process ...

  4. Global Auroral Energy Deposition during Substorm Onset Compared with Local Time and Solar Wind IMF Conditions

    Science.gov (United States)

    Spann, J. F.; Brittnacher, M.; Fillingim, M. O.; Germany, G. A.; Parks, G. K.

    1998-01-01

    The global images made by the Ultraviolet Imager (UVI) aboard the IASTP/Polar Satellite are used to derive the global auroral energy deposited in the ionosphere resulting from electron precipitation. During a substorm onset, the energy deposited and its location in local time are compared to the solar wind IMF conditions. Previously, insitu measurements of low orbiting satellites have made precipitating particle measurements along the spacecraft track and global images of the auroral zone, without the ability to quantify energy parameters, have been available. However, usage of the high temporal, spatial, and spectral resolution of consecutive UVI images enables quantitative measurement of the energy deposited in the ionosphere not previously available on a global scale. Data over an extended period beginning in January 1997 will be presented.

  5. Growth and characterization of chemical bath deposited Cd{sub 1-x}Zn{sub x}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mariappan, R. [Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020 (India); Ragavendar, M. [Department of Physics, RVS College of Engineering and Technology, Coimbatore 641 042 (India); Ponnuswamy, V., E-mail: marijpr@gmail.com [Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020 (India)

    2011-07-07

    Highlights: > In this study we examine the Cd{sub 1-x}Zn{sub x}S thin films prepared at Chemical bath deposition method. This method used because it is a simple and economic and viable technique, which produces films of good quality for device application. > In this study we conclude that chemical bath deposition technique is suitable for the preparation of smooth and uniform films suitable for sensors and solar cells > X-ray is a good way for crystal structure characterization > - Abstract: Cd{sub 1-x}Zn{sub x}S (0 {<=} x {<=} 1) thin films have been deposited by chemical bath deposition method on glass substrates from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 80 {+-} 5 deg. C and after annealed at 350 deg. C. The structural, morphological, compositional and optical properties of the deposited Cd{sub 1-x}Zn{sub x}S thin films have been studied by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), photoluminescence (PL) and UV-vis spectrophotometer, respectively. X-ray diffraction analysis shows that for x < 0.8, the crystal structure of Cd{sub 1-x}Zn{sub x}S thin films was hexagonal structure. For x > 0.6, however, the Cd{sub 1-x}Zn{sub x}S films were grown with cubic structure. Annealing the samples at 350 deg. C in air for 45 min resulted in increase in intensity as well as a shift towards lower scattering angles. The parameters such as crystallite size, strain, dislocation density and texture coefficient are calculated from X-ray diffraction studies. SEM studies reveal the formation of Cd{sub 1-x}Zn{sub x}S films with uniformly distributed grains over the entire surface of the substrate. The EDX analysis shows the content of atomic percentage. Optical method was used to determine the band gap of the films. The photoluminescence spectra of films have been studied and the results are discussed.

  6. Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zanfoni, N.; Avril, L.; Imhoff, L.; Domenichini, B., E-mail: bruno.domenichini@u-bourgogne.fr; Bourgeois, S.

    2015-08-31

    Thin films of Pt-doped CeO{sub 2} were grown by direct liquid injection chemical vapor deposition on silicon wafer covered by native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to the deposition way. For platinum deposited on top of cerium oxide thin films previously grown, metallic platinum particles were obtained. Cerium and platinum codeposition allowed obtaining a Pt{sup 0} and Pt{sup 2+} mixture with the Pt{sup 2+} to Pt ratio strongly dependent on the platinum flow rate during the deposition. Indeed, the lower the platinum precursor flow rate is, the higher the Pt{sup 2+} to Pt ratio is. Moreover, surface and cross-sectional morphologies obtained by scanning electron microscopy evidenced porous layers in any case. - Highlights: • Pt-doped ceria were synthesized. • Films were obtained by direct liquid injection chemical vapor deposition. • Simultaneous deposition of Pt and Ce was used to obtain homogeneous films. • Pt{sup 2+} was revealed through X-ray photoelectron spectroscopy. • Different routes were used to exalt Pt{sup 2+}/Pt ratio.

  7. Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

    International Nuclear Information System (INIS)

    Thin films of Pt-doped CeO2 were grown by direct liquid injection chemical vapor deposition on silicon wafer covered by native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to the deposition way. For platinum deposited on top of cerium oxide thin films previously grown, metallic platinum particles were obtained. Cerium and platinum codeposition allowed obtaining a Pt0 and Pt2+ mixture with the Pt2+ to Pt ratio strongly dependent on the platinum flow rate during the deposition. Indeed, the lower the platinum precursor flow rate is, the higher the Pt2+ to Pt ratio is. Moreover, surface and cross-sectional morphologies obtained by scanning electron microscopy evidenced porous layers in any case. - Highlights: • Pt-doped ceria were synthesized. • Films were obtained by direct liquid injection chemical vapor deposition. • Simultaneous deposition of Pt and Ce was used to obtain homogeneous films. • Pt2+ was revealed through X-ray photoelectron spectroscopy. • Different routes were used to exalt Pt2+/Pt ratio

  8. Solar physical vapor deposition: A new approach for preparing magnesium titanate nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Apostol, Irina [S.C. IPEE Amiral Trading Impex S.A., 115300 Curtea de Arges (Romania); Saravanan, K. Venkata, E-mail: vsk@ua.pt [Department of Materials and Ceramic Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Monty, Claude J.A. [CNRS-PROMES Laboratory, Odeillo 66120, Font Romeu (France); Vilarinho, Paula M. [Department of Materials and Ceramic Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal)

    2013-11-15

    Solar energy is a major factor in the equation of energy, because of the unlimited potential of the sun that eclipses all other renewable sources of energy. Solar physical vapor deposition (SPVD) is a core innovative, original and environmentally friendly process to prepare nanocrystalline materials in a powder form. The principle of this process is to melt the material under concentrated solar radiation, which evaporates and condenses as nanopowders on a cold surface. We synthesized nanopowders of magnesium titanate by the SPVD process at PROMES Laboratory in Odeillo-Font Romeu, France. The SPVD system consists of a parabolic mirror concentrator, a mobile plane mirror (“heliostat”) tracking the sun and a solar reactor “heliotron”. The synthesized nanopowders were analyzed by X-ray diffraction (XRD) to know their crystalline structure and scanning electron microscopy (SEM) was used for determining the surface morphology. We have shown that the characteristics of obtained nanotitanates were determined by the targets’ composition and SPVD process parameters such as the working pressure inside the solar reactor and evaporation duration (process time).

  9. CHEMICALLY DEPOSITED SILVER FILM USED AS A SERS-ACTIVE OVER COATING LAYER FOR POLYMER FILM

    Institute of Scientific and Technical Information of China (English)

    Xiao-ning Liu; Gi Xue; Yun Lu; Jun Zhang; Fen-ting Li; Chen-chen Xue; Stephen Z.D. Cheng

    2001-01-01

    When colloidal silver particles were chemically deposited onto polymer film as an over-coating layer, surfaceenhanced Raman scattering (SERS) spectra could be collected for the surface analysis. SERS measurements of liquid crystal film were successfully performed without disturbing the surface morphology.

  10. Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

    OpenAIRE

    Cao, H. L.; Yu, Q. K.; Jauregui, L. A.; Tian, J; Wu, W.; Z. Liu; Jalilian, R.; Benjamin, D. K.; Jiang, Z.; J. Bao; Pei, S S; Chen, Y P

    2009-01-01

    We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field ...

  11. Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Well-aligned ZnO nanowires were grown on Si substrate by chemical vapor deposition.The experimental results showed that the density of nanowires was related to the heating process and growth temperature.High-density ZnO nanowires were obtained under optimal conditions.The growth mechanism of the ZnO nanowires was presented as well.

  12. Thermoluminescence Characteristics of a New Production of Chemical Vapour Deposition Diamond

    Energy Technology Data Exchange (ETDEWEB)

    Furetta, C.; Kitis, G.; Brambilla, A.; Jany, C.; Bergonzo, P.; Foulon, F

    1999-07-01

    The dosimetric properties are presented of a recent production of chemical vapour deposition diamond growth. Experimental data concerning the TL response as a function of dose, the energy response and fading behaviour are reported. Very preliminary results suggest that diamond can be used in TL mode as well as an activation detector. (author)

  13. The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

    Science.gov (United States)

    Maraeva, E. V.; Alexandrova, O. A.; Forostyanaya, N. A.; Levitskiy, V. S.; Mazing, D. S.; Maskaeva, L. N.; Markov, V. Ph; Moshnikov, V. A.; Shupta, A. A.; Spivak, Yu M.; Tulenin, S. S.

    2015-11-01

    In this study lead sulphide - cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements.

  14. Control of tin oxide film morphology by addition of hydrocarbons to the chemical vapour deposition process

    Czech Academy of Sciences Publication Activity Database

    Yates, H.M.; Evans, P.; Sheel, D.W.; Remeš, Zdeněk; Vaněček, Milan

    2010-01-01

    Roč. 519, č. 4 (2010), s. 1334-1340. ISSN 0040-6090 EU Projects: European Commission(XE) 214134 - N2P; European Commission(XE) 38885 - SE-POWERFOIL Institutional research plan: CEZ:AV0Z10100521 Keywords : alcohol * chemical vapour deposition * morphology * tin oxide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.909, year: 2010

  15. Chemical deposition and characterization of thorium-alloyed lead sulfide thin films

    International Nuclear Information System (INIS)

    We present a chemical bath deposition process for alloying PbS thin films with 232Th, a stable isotope of thorium, to provide a model system for radiation damage studies. Variation of deposition parameters such as temperature, reagent concentrations and time allows controlling the properties of the resulting films. Small amounts of incorporated thorium (0.5%) strongly affected the surface topography and the orientation of the films and slowed down the growth rate. The Th appears to be incorporated as substitutional ions in the PbS lattice. - Highlights: • Chemical bath deposition has been used for alloying lead sulfide films with 232Th. • The effect of Th on the structural and optical properties of the films was studied. • Incorporation of Th affected surface topography, orientation, Eg and growth rate

  16. Chemical vapor deposition of ZrC within a spouted bed by bromide process

    Science.gov (United States)

    Ogawa, T.; Ikawa, K.; Iwamoto, K.

    1981-03-01

    ZrC coatings by chemical vapor deposition were applied to particles of ThO 2, UO 2 and Al 2O 3 at 1623-1873 K. The feed gas mixture consisted of ZrBr 4, CH 4, H 2 and Ar. The results were compared with the calculated chemical equilibria in the Zr-C-H-Br system. It was shown that the weight and composition of the deposit can be calculated by thermochemical analysis after correcting the methane flow rate for a pyrolysis efficiency. Predominant reaction presumably occurring were derived by a mass balance consideration on the calculated equilibrium species. A simplified model of the ZrC deposition was proposed.

  17. A Study on Medium Temperature Chemical Vapor Deposition (MT-CVD) Technology and Super Coating Materials

    Institute of Scientific and Technical Information of China (English)

    GAO Jian; LI Jian-ping; ZENG Xiang-cai; MA Wen-cun

    2004-01-01

    In this paper, the dense and columnar crystalline TiCN coating layers with very good bonding strength between a layer and another layer was deposited using Medium Temperature Chemical Vapor Deposition (MT-CVD) where CH3CN organic composite with C/N atomic clusters etc. was utilized at 700 ~ 900 ℃. Effect of coating processing parameters, such as coating temperature, pressure and different gas flow quantity on structures and properties of TiCN coating layers were investigated. The super coating mechanis mand structures were analyzed. The new coating processing parameters and properties of carbide inserts with super coating layers were gained by using the improved high temperature chemical vapor deposition (HTCVD) equipment and HT-CVD, in combination with MT-CVD technology.

  18. Fabrication and characterization of indium sulfide thin films deposited on SAMs modified substrates surfaces by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng Xu [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Lu Yongjuan; Zhang Xiaoliang [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Graduate School of Chinese Academy of Sciences, Beijing, 10049 (China); Yang Baoping [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Yi Gewen [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Jia Junhong, E-mail: jhjia@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)

    2011-11-01

    In an effort to explore the optoelectronic properties of nanostructured indium sulfide (In{sub 2}S{sub 3}) thin films for a wide range of applications, the In{sub 2}S{sub 3} thin films were successfully deposited on the APTS layers (-NH{sub 2}-terminated) modified ITO glass substrates using the chemical bath deposition technique. The surface morphology, structure and composition of the resultant In{sub 2}S{sub 3} thin films were characterized by FESEM, XRD, and XPS, respectively. Also, the correlations between the optical properties, photocurrent response and the thickness of thin films were established. According to the different deposition mechanisms on the varying SAMs terminational groups, the positive and negative micropatterned In{sub 2}S{sub 3} thin films were successfully fabricated on modified Si substrates surface combining with the ultraviolet lithography process. This offers an attractive opportunity to fabricate patterned In{sub 2}S{sub 3} thin films for controlling the spatial positioning of functional materials in microsystems.

  19. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  20. Deposition kinetics and characterization of stable ionomers from hexamethyldisiloxane and methacrylic acid by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Urstöger, Georg; Resel, Roland; Koller, Georg; Coclite, Anna Maria

    2016-04-01

    A novel ionomer of hexamethyldisiloxane and methacrylic acid was synthesized by plasma enhanced chemical vapor deposition (PECVD). The PECVD process, being solventless, allows mixing of monomers with very different solubilities, and for polymers formed at high deposition rates and with high structural stability (due to the high number of cross-links and covalent bonding to the substrate) to be obtained. A kinetic study over a large set of parameters was run with the aim of determining the optimal conditions for high stability and proton conductivity of the polymer layer. Copolymers with good stability over 6 months' time in air and water were obtained, as demonstrated by ellipsometry, X-Ray reflectivity, and FT-IR spectroscopy. Stable coatings showed also proton conductivity as high as 1.1 ± 0.1 mS cm-1. Chemical analysis showed that due to the high molecular weight of the chosen precursors, it was possible to keep the plasma energy-input-per-mass low. This allowed limited precursor fragmentation and the functional groups of both monomers to be retained during the plasma polymerization.

  1. Single-chamber process development of microcrystalline sicicon solar cells and high-rate deposited intrinsic layers

    OpenAIRE

    Graf, Urs Samuel; Shah, Arvind

    2005-01-01

    The "Micromorph" tandem solar cell concept consisting of an amorphous and a microcrystalline silicon solar cell is considered to be one of the most promising concepts for the next solar cell generation. To translate this concept into action, efficient industrial processes have to be developed. Thereby important issues have to be considered, such as e.g. the development of an economical single-chamber process and the achievement of high deposition rates for intrinsic microcrystalline silicon (...

  2. A comparison of reversible chemical reactions for solar thermochemical power generation

    OpenAIRE

    Williams, O. M.

    1980-01-01

    Reversible chemical reactions operating in a thermochemical energy transfer system have been proposed for solar electricity generation in order to solve not only the problem of energy transport from the solar collection field to a central power plant, but also potentially the long term lossless energy storage problem through underground storage of the reaction products. A number of reactions have been proposed for solar thermochemical power generation and in this paper the thermodynamic and c...

  3. Textured indium tin oxide thin films by chemical solution deposition and rapid thermal processing

    International Nuclear Information System (INIS)

    The microstructure of state-of-the-art chemical solution deposited indium tin oxide thin films typically consists of small randomly oriented grains, high porosity and poor homogeneity. The present study demonstrates how the thin film microstructure can be improved significantly by tailoring the precursor solutions and deposition conditions to be kinetically and thermodynamically favorable for generation of homogeneous textured thin films. This is explained by the occurrence of a single heterogeneous nucleation mechanism. The as-deposited thin films, crystallized at 800 deg. C, have a high apparent density, based on a refractive index of ∼ 1.98 determined by single wavelength ellipsometry at 633 nm. The microstructure of the films consists of columnar grains with preferred orientation as determined by X-ray diffraction and transmission electron microscopy. The resistivity, measured by the four point probe method, is ∼ 2 x 10-3 Ω cm prior to post-deposition treatments

  4. Selective chemical vapor deposition of tungsten films on titanium-ion-irradiated silicon dioxide

    International Nuclear Information System (INIS)

    Selective area deposition of adherent tungsten (W) film on titanium (Ti)-ion-irradiated silicon dioxide (SiO2 is achieved. First, Ti-ion irradiation through a stencil mask is performed at 600 eV for 1.1 x 1016 atoms/cm2 in a reaction chamber. Next, ArF excimer laser (λ = 193 nm) chemical vapor deposition (CVD) with tungsten hexafluoride (WF6) and hydrogen (H2) is carried out for 40 seconds at 400 K. Finally, low-pressure (LP) CVD is carried out at 600 K and then W films are deposited selectively on the ion-irradiated SiO2. Without the laser CVD step, the ion-irradiation pattern disappears during LPCVD and no W film deposition occurs

  5. Laser chemical vapor deposition of W on Si and SiO2/Si

    International Nuclear Information System (INIS)

    Direct write of W on bare Si and native SiO2/Si substrates has been investigated in an laser chemical vapor deposition (LCVD) system. W deposits on bare Si surface via the Si and/or H2 reduction of WF6 were self-limited in thickness to 200 - 600 Angstrom in both cases. Auger electron spectroscopic analysis showed that Si-H bonds could be poisoning the further growth of W. W deposits on native SiO2/Si were only obtainable via the H2 reduction WF6 in our laser direct-write system. The authors' experimental kinetic study indicates that HF desorption from the surface is the rate-controlling step for W deposition via the H2 reduction WF6

  6. Synthesis of low leakage current chemical vapour deposited (CVD) diamond films for particle detection

    International Nuclear Information System (INIS)

    We report on synthesis of diamond films by direct current glow discharge chemical vapour deposition (CVD) prepared at different deposition conditions, for application in high energy physics. The synthesis apparatus is briefly described. Continuous undoped diamond samples have been grown onto Mo substrates with a deposition area up to 1 cm2 and an electrical resistivity as high as 1013 Ωcm. The deposition parameters are related to the material properties of the diamonds, investigated by optical spectroscopy, electron microscopy and diffraction analysis. Decreasing the linear growth rate results in good quality films with small remnants of graphite-like phases. The high crystalline quality and phase purity of the films are related to very low values of leakage currents. The particle induced conductivity of these samples is also studied and preliminary results on charge collection efficiency are presented. (orig.)

  7. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  8. Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    We present a simple, low-cost and high-effective method for synthesizing high-quality, large-area graphene using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on SiO2/Si substrate covered with Ni thin film at relatively low temperatures (650 deg. C). During deposition, the trace amount of carbon (CH4 gas flow rate of 2 sccm) is introduced into PECVD chamber and the deposition time is only 30 s, in which the carbon atoms diffuse into the Ni film and then segregate on its surface, forming single-layer or few-layer graphene. After deposition, Ni is removed by wet etching, and the obtained single continuous graphene film can easily be transferred to other substrates. This investigation provides a large-area, low temperature and low-cost synthesis method for graphene as a practical electronic material.

  9. Sputter deposition of transition-metal carbide films — A critical review from a chemical perspective

    International Nuclear Information System (INIS)

    Thin films based on transition-metal carbides exhibit many interesting physical and chemical properties making them attractive for a variety of applications. The most widely used method to produce metal carbide films with specific properties at reduced deposition temperatures is sputter deposition. A large number of papers in this field have been published during the last decades, showing that large variations in structure and properties can be obtained. This review will summarise the literature on sputter-deposited carbide films based on chemical aspects of the various elements in the films. By considering the chemical affinities (primarily towards carbon) and structural preferences of different elements, it is possible to understand trends in structure of binary transition-metal carbides and the ternary materials based on these carbides. These trends in chemical affinity and structure will also directly affect the growth process during sputter deposition. A fundamental chemical perspective of the transition-metal carbides and their alloying elements is essential to obtain control of the material structure (from the atomic level), and thereby its properties and performance. This review covers a wide range of materials: binary transition-metal carbides and their nanocomposites with amorphous carbon; the effect of alloying carbide-based materials with a third element (mainly elements from groups 3 through 14); as well as the amorphous binary and ternary materials from these elements deposited under specific conditions or at certain compositional ranges. Furthermore, the review will also emphasise important aspects regarding materials characterisation which may affect the interpretation of data such as beam-induced crystallisation and sputter-damage during surface analysis

  10. Chemical Signatures of Interstellar Dusts Preserved in Primitive Chondrites and Inner Planets of the Solar System

    Science.gov (United States)

    Yin, Qing-Zhu

    2002-01-01

    We show that the inheritance of interstellar materials by the solar system is not only documented by the presence of presolar grains, various isotopic anomalies, but also expressed in the chemical element distribution in the inner solar system. Additional information is contained in the original extended abstract.

  11. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  12. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    International Nuclear Information System (INIS)

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy

  13. Quantum Chemical Simulation of Carbon Nanotube Nucleation on Al2O3 Catalysts via CH4 Chemical Vapor Deposition.

    Science.gov (United States)

    Page, Alister J; Saha, Supriya; Li, Hai-Bei; Irle, Stephan; Morokuma, Keiji

    2015-07-29

    We present quantum chemical simulations demonstrating how single-walled carbon nanotubes (SWCNTs) form, or "nucleate", on the surface of Al2O3 nanoparticles during chemical vapor deposition (CVD) using CH4. SWCNT nucleation proceeds via the formation of extended polyyne chains that only interact with the catalyst surface at one or both ends. Consequently, SWCNT nucleation is not a surface-mediated process. We demonstrate that this unusual nucleation sequence is due to two factors. First, the π interaction between graphitic carbon and Al2O3 is extremely weak, such that graphitic carbon is expected to desorb at typical CVD temperatures. Second, hydrogen present at the catalyst surface actively passivates dangling carbon bonds, preventing a surface-mediated nucleation mechanism. The simulations reveal hydrogen's reactive chemical pathways during SWCNT nucleation and that the manner in which SWCNTs form on Al2O3 is fundamentally different from that observed using "traditional" transition metal catalysts. PMID:26148208

  14. Chemical vapor deposition of atomically thin materials for membrane dialysis applications

    Science.gov (United States)

    Kidambi, Piran; Mok, Alexander; Jang, Doojoon; Boutilier, Michael; Wang, Luda; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Atomically thin 2D materials like graphene and h-BN represent a new class of membranes materials. They offer the possibility of minimum theoretical membrane transport resistance along with the opportunity to tune pore sizes at the nanometer scale. Chemical vapor deposition has emerged as the preferable route towards scalable, cost effective synthesis of 2D materials. Here we show selective molecular transport through sub-nanometer diameter pores in graphene grown via chemical vapor deposition processes. A combination of pressure driven and diffusive transport measurements shows evidence for size selective transport behavior which can be used for separation by dialysis for applications such as desalting of biomolecular or chemical solutions. Principal Investigator

  15. Amorphous silicon thin-film solar cells deposited on flexible substrates using different zinc oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Alpuim, P.; Samantilleke, A.; Marins, E.; Rebouta, L. [Centro de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Oliveira, F.; Cerqueira, M.F. [Centro de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Stefanov, S.; Chiussi, S. [Departamento de Fisica Aplicada, E.T.S.I. Industriales, Universidade de Vigo, Campus Universitario Lagoas Marcosende, 36310 Vigo (Spain); Serra, C. [Departamento de Fisica Aplicada, E.T.S.I. Industriales, Universidade de Vigo, Campus Universitario Lagoas Marcosende, 36310 Vigo (Spain); C.A.C.T.I., Universidade de Vigo, Campus Universitario Lagoas Marcosende, 36310 Vigo (Spain); Bouree, J.E. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France)

    2010-04-15

    In order to improve the transparent contact layer in amorphous silicon solar cells fabricated on low-temperature plastic substrates, Al and Ga doped ZnO films were deposited at room temperature on plastic and glass and their optical, electronic and structural properties were correlated and optimized. Aiming to explore light trapping effects, plastic substrates were laser textured and their haze and total transmittance and reflectance were compared with those of untextured substrates. Although the haze increased dramatically, from 1.7 to 78.9%, the total transmittance of PET coated with ZnO:Ga decreased from 83.9%, in the untextured substrate, to 58.5% in the textured PET. The haze in reflected light of PET coated with Al increased from 4.3% to 66.2% after texturing but the total reflectance decreased from 70.1% to 36.8%. Therefore the untextured substrates were used in the solar cells. a-Si:H solar cells were deposited at a substrate temperature of 150 C on plastic, in the superstrate p-i-n configuration, and on stainless steel, in the substrate n-i-p configuration. The efficiency is {proportional_to}5% in both types of devices, limited by low J{sub sc} and low fill factor. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Solar photocatalytic degradation of phenol using pyrolitic TiO2 films deposited inside a tubing

    International Nuclear Information System (INIS)

    Solar photocatalytic degradation of phenol was obtained using TiO2 films deposited inside glass tubing. TiO2 thin films inside tubing were obtained by spray-gel technique using a titanium isopropoxide solution conveniently diluted in ethanol. The gas carrier flux, air pressure and temperature were kept during deposition at 5 L/min, 200 kPa, and 200 oC, respectively. Experiments were performed using either the solar radiation or a 300 W lamp simulating the UVA solar radiation component. In order to concentrate the radiation a reflective surface was placed in the back part of the tube. The initial concentration of phenol solution was 20 ppm, and the phenol concentration during the experiment was followed using a standard colorimetric method when aminoantipirine reacts in the sample giving a colored complex. The volume of the phenol solution was limited with a solid aluminum rod placed axially to the glass tube. The obtained TiO2 films were amorphous, but after an annealing at 450oC for 1 h the films crystallize to anatase structure and present photocatalytic activity. The films morphology observed by scanning electron microscopy presented a uniform film and agglomerates of TiO2, the size of the agglomerates increases as Ti isopropoxide/ethanol molar ratio of the starting solution decreases. The precursor concentration solution and film thickness of TiO2 for phenol degradation was optimized. (author)

  17. Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Yu-Tsu Lee

    2016-05-01

    Full Text Available In this paper, we propose a chemically grown titanium oxide (TiO2 on Si to form a heterojunction for photovoltaic devices. The chemically grown TiO2 does not block hole transport. Ultraviolet photoemission spectroscopy was used to study the band alignment. A substantial band offset at the TiO2/Si interface was observed. X-ray photoemission spectroscopy (XPS revealed that the chemically grown TiO2 is oxygen-deficient and contains numerous gap states. A multiple-trap-assisted tunneling (TAT model was used to explain the high hole injection rate. According to this model, the tunneling rate can be 105 orders of magnitude higher for holes passing through TiO2 than for flow through SiO2. With 24-nm-thick TiO2, a Si solar cell achieves a 33.2 mA/cm2 photocurrent on a planar substrate, with a 9.4% power conversion efficiency. Plan-view scanning electron microscopy images indicate that a moth-eye-like structure formed during TiO2 deposition. This structure enables light harvesting for a high photocurrent. The high photocurrent and ease of production of chemically grown TiO2 imply that it is a suitable candidate for future low-cost, high-efficiency solar cell applications.

  18. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

    Energy Technology Data Exchange (ETDEWEB)

    Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

    2016-04-26

    A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

  19. Review on advanced of solar assisted chemical heat pump dryer for agriculture produce

    International Nuclear Information System (INIS)

    Over the past three decades there has been nearly exponential growth in drying R and D on a global scale. Improving of the drying operation to save energy, improve product quality as well as reduce environmental effect remained as the main objectives of any development of drying system. A solar assisted chemical heat pump dryer is a new solar drying system, which have contributed to better cost-effectiveness and better quality dried products as well as saving energy. A solar collector is adapted to provide thermal energy in a reactor so a chemical reaction can take place. This reduces the dependency of the drying technology on fossil energy for heating. In this paper a review on advanced of solar assisted chemical heat pump dryer is presented (the system model and the results from experimental studies on the system performance are discussed). The review of heat pump dryers and solar assisted heat pump dryer is presented. Description of chemical heat pump types and the overview of chemical heat pump dryer are discussed. The combination of chemical heat pump and solar technology gives extra efficiency in utilizing energy. (author)

  20. Review on advanced of solar assisted chemical heat pump dryer for agriculture produce

    Energy Technology Data Exchange (ETDEWEB)

    Fadhel, M.I. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka (Malaysia); Sopian, K.; Daud, W.R.W.; Alghoul, M.A. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2011-02-15

    Over the past three decades there has been nearly exponential growth in drying R and D on a global scale. Improving of the drying operation to save energy, improve product quality as well as reduce environmental effect remained as the main objectives of any development of drying system. A solar assisted chemical heat pump dryer is a new solar drying system, which have contributed to better cost-effectiveness and better quality dried products as well as saving energy. A solar collector is adapted to provide thermal energy in a reactor so a chemical reaction can take place. This reduces the dependency of the drying technology on fossil energy for heating. In this paper a review on advanced of solar assisted chemical heat pump dryer is presented (the system model and the results from experimental studies on the system performance are discussed). The review of heat pump dryers and solar assisted heat pump dryer is presented. Description of chemical heat pump types and the overview of chemical heat pump dryer are discussed. The combination of chemical heat pump and solar technology gives extra efficiency in utilizing energy. (author)

  1. Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells

    Science.gov (United States)

    Jin, Bin Bin; Wang, Ye Feng; Wang, Xue Qing; Zeng, Jing Hui

    2016-04-01

    Lead selenide (PbSe) thin films were deposited on fluorine doped tin oxide (FTO) glass by a facile one-step pulse voltage electrodeposition method, and used as counter electrode (CE) in CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). A power conversion efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells, which is much better than that of 2.39% received using Pt CEs. The enhanced performance is attributed to the extended absorption in the near infrared region, superior electrocatalytic activity and p-type conductivity with a reflection of the incident light at the back electrode in addition. The physical and chemical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), reflectance spectra, electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The present work provides a facile pathway to an efficient CE in the QDSSCs.

  2. Development of a method to lower recontamination after chemical decontamination by depositing Pt nano particles

    International Nuclear Information System (INIS)

    The Pt coating (Pt-C) process has been developed to lower recontamination by radioactive elements after chemical decontamination of piping surfaces. In this process, a layer of fine Pt nano particles is formed in aqueous solution on the base metal of the piping following the chemical decontamination. In this study, we confirmed the suppression effect by the Pt-C toward 60Co deposition on type 316 stainless steel using a 60Co deposition test under hydrogen water chemistry. The deposition amounts of 60Co which were incorporated in oxides after 1000 h with and without the Pt-C process were about 90 and 10.2 Bq/cm2, respectively. The amount of 60Co deposition with Pt-C is about 10% that of non-coated specimens. The 60Co incorporation for the Pt-C specimen was suppressed by decreasing the formation of oxides. We considered this phenomenon from experimental results and concluded that oxides were chemically reduced by the effect of Pt and hydrogen radicals which were produced in the reaction between H2 and Pt, and then oxides were dissolved into the water. (author)

  3. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (VS) and of the proportion of TEOS in the mixture (XT) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on VS and XT are presented

  4. Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

    International Nuclear Information System (INIS)

    Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively. The electric fields were generated by applying a potential difference between the inter-digitated electrodes of the gas sensor substrates during the deposition. The deposited films were characterised using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The application of an electric field, encouraged the formation of interesting and unusual nanostructured morphologies, with a change in scale length and island packing. It was also noted that crystallographic orientation of the films could be controlled as a function of electric field type and strength. The gas sensor properties of the films were also examined; it was found that a two to three fold enhancement in the gas response could be observed from sensors with enhanced morphologies compared to control sensors grown without application of an electric field. - Highlights: • Electric field assisted chemical vapour deposition method • Ability to create high surface area film architectures • Can produce enhanced sensor response • Good control over film properties

  5. Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Naik, Anupriya J.T.; Bowman, Christopher; Panjwani, Naitik [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London WC1H 0HY (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2013-10-01

    Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively. The electric fields were generated by applying a potential difference between the inter-digitated electrodes of the gas sensor substrates during the deposition. The deposited films were characterised using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The application of an electric field, encouraged the formation of interesting and unusual nanostructured morphologies, with a change in scale length and island packing. It was also noted that crystallographic orientation of the films could be controlled as a function of electric field type and strength. The gas sensor properties of the films were also examined; it was found that a two to three fold enhancement in the gas response could be observed from sensors with enhanced morphologies compared to control sensors grown without application of an electric field. - Highlights: • Electric field assisted chemical vapour deposition method • Ability to create high surface area film architectures • Can produce enhanced sensor response • Good control over film properties.

  6. Chemical vapour deposition diamond coating on tungsten carbide dental cutting tools

    International Nuclear Information System (INIS)

    Diamond coatings on Co cemented tungsten carbide (WC-Co) hard metal tools are widely used for cutting non-ferrous metals. It is difficult to deposit diamond onto cutting tools, which generally have a complex geometry, using a single step growth process. This paper focuses on the deposition of polycrystalline diamond films onto dental tools, which possess 3D complex or cylindrical shape, employing a novel single step chemical vapour deposition (CVD) growth process. The diamond deposition is carried out in a hot filament chemical vapour deposition (HFCVD) reactor with a modified filament arrangement. The filament is mounted vertically with the drill held concentrically in between the filament coils, as opposed to the commonly used horizontal arrangement. This is a simple and inexpensive filament arrangement. In addition, the problems associated with adhesion of diamond films on WC-Co substrates are amplified in dental tools due to the very sharp edges and unpredictable cutting forces. The presence of Co, used as a binder in hard metals, generally causes poor adhesion. The amount of metallic Co on the surface can be reduced using a two step pre-treatment employing Murakami etching followed by an acid treatment. Diamond films are examined in terms of their growth rate, morphology, adhesion and cutting efficiency. We found that in the diamond coated dental tool the wear rate was reduced by a factor of three as compared to the uncoated tool

  7. Chemically deposited TiO2/CdS bilayer system for photoelectrochemical properties

    Indian Academy of Sciences (India)

    P R Deshmukh; U M Patil; K V Gurav; S B Kulkarni; C D Lokhande

    2012-12-01

    In the present investigation, TiO2, CdS and TiO2/CdS bilayer system have been deposited on the fluorine doped tin oxide (FTO) coated glass substrate by chemical methods. Nanograined TiO2 was deposited on FTO coated glass substrates by successive ionic layers adsorption and reaction (SILAR) method. Chemical bath deposition (CBD)method was employed to deposit CdS thin film on pre-deposited TiO2 film. A further study has beenmade for structural, surface morphological, optical and photoelectrochemical (PEC) properties of FTO/TiO2, FTO/CdS and FTO/TiO2/CdS bilayers system. PEC behaviour of FTO/TiO2/CdS bilayers was studied and compared with FTO/CdS single system. FTO/TiO2/CdS bilayers system showed improved performance of PEC properties over individual FTO/CdS thin films.

  8. Influence of precursor solution parameters on chemical properties of calcium phosphate coatings prepared using Electrostatic Spray Deposition (ESD).

    NARCIS (Netherlands)

    Leeuwenburgh, S.C.G.; Wolke, J.G.C.; Schoonman, J.; Jansen, J.A.

    2004-01-01

    A novel coating technique, referred to as Electrostatic Spray Deposition (ESD), was used to deposit calcium phosphate (CaP) coatings with a variety of chemical properties. The relationship between the composition of the precursor solutions and the crystal and molecular structure of the deposited coa

  9. Models of Gas-phase and Surface Chemistry for Plasma Enhanced Chemical Vapor Deposition

    Science.gov (United States)

    Meeks, Ellen

    1996-10-01

    Plasma enhanced chemical vapor deposition for inter-metal-layer gap-fill processes are increasingly important in semiconductor device manufacture, as the devices include increasing numbers of metal layers with decreasing linewidth and spacing. Optimization of these processes requires knowledge of the microscopic consequences of variations in reactor operating conditions. Topographical simulation can address the gap-fill performance of a depositing film, but the predictive capabiliities are limited by the ability of the model user to accurately supply ion and radical fluxes at a gas/surface interface. Critical to determining this information are the chemical kinetics between gas-phase species and the deposition surfaces. Recent improvements and extensions to the CHEMKIN and Surface CHEMKIN software allow general inclusion of detailed chemical mechanisms in plasma simulations and in models of plasma-surface interactions. In the results presented here (This work represents a collaboration with R. Larson and P. Ho at Sandia, J. Rey and J. Li at TMA, S. M. Han and E. Aydil of UCSB, and S. Huang at Lam Research Corporation), we have used a CHEMKIN-based well mixed reactor model of a high-density SiH_4/O_2/Ar plasma to predict and characterize species fluxes, oxide-deposition rates, and ion-milling rates on a flat surface. These calculated rates can be used as direct input to a topographical simulator. The gas-phase chemistry in the plasma reactor model is comprised of electron impact reactions with silane, oxygen, hydrogen, and argon, as well as neutral radical recombination, abstraction, and oxidation reactions. The surface reaction mechanism contains four classes of reactions: silicon-containing radical deposition, radical abstraction, ion-induced desorption, and physical ion sputtering. We include relative thermochemistry of the surface and gas species to allow reversible reaction dynamics. The plasma model results show good agreement with measured ion densities, as

  10. Microstructural characterization and chemical compatibility of pulsed laser deposited yttria coatings on high density graphite

    International Nuclear Information System (INIS)

    Yttria coatings were deposited on high density (HD) graphite substrate by pulsed laser deposition method and subsequently annealing in vacuum at 1373 K was carried out to evaluate the thermal stability of the coatings. Yttria deposited on HD graphite samples were exposed to molten LiCl–KCl salt at 873 K for 3 h to evaluate the corrosion behavior of the coating for the purpose of pyrochemical reprocessing applications. The microstructure and the corrosion behavior of the yttria coating deposited on HD graphite in molten LiCl–KCl salt were evaluated by several characterization techniques. X-ray diffraction and Laser Raman patterns confirmed the presence of cubic phase of yttria in the coating. The surface morphology of yttria coating on HD graphite examined by scanning electron microscope and atomic force microscopy revealed the agglomeration of oxide particles and formation of clusters. After annealing at 1373 K, no appreciable grain growth of yttria particles could be observed. X-ray photoelectron spectroscopy analysis was carried out for elemental analysis before and after chemical compatibility test of the coated samples in molten LiCl–KCl salt to identify the corrosive elements present on the yttria coatings. The chemical compatibility and thermal stability of the yttria coating on HD graphite in molten LiCl–KCl salt medium have been established. - Highlights: • Y2O3 coating was deposited on graphite by pulsed laser deposition method. • Chemical compatibility of Y2O3 coating in LiCl–KCl salt at 873 K was studied. • Gibbs free energy change was positive for Y2O3 reaction with Cl2, U and UCl3. • Y2O3 coating exhibited better corrosion performance in molten LiCl–KCl salt

  11. Microstructural characterization and chemical compatibility of pulsed laser deposited yttria coatings on high density graphite

    Energy Technology Data Exchange (ETDEWEB)

    Sure, Jagadeesh [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Mishra, Maneesha [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Tarini, M. [SRM University, Kattankulathur-603 203 (India); Shankar, A. Ravi; Krishna, Nanda Gopala [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Kuppusami, P. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Mallika, C. [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Mudali, U. Kamachi, E-mail: kamachi@igcar.gov.in [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India)

    2013-10-01

    Yttria coatings were deposited on high density (HD) graphite substrate by pulsed laser deposition method and subsequently annealing in vacuum at 1373 K was carried out to evaluate the thermal stability of the coatings. Yttria deposited on HD graphite samples were exposed to molten LiCl–KCl salt at 873 K for 3 h to evaluate the corrosion behavior of the coating for the purpose of pyrochemical reprocessing applications. The microstructure and the corrosion behavior of the yttria coating deposited on HD graphite in molten LiCl–KCl salt were evaluated by several characterization techniques. X-ray diffraction and Laser Raman patterns confirmed the presence of cubic phase of yttria in the coating. The surface morphology of yttria coating on HD graphite examined by scanning electron microscope and atomic force microscopy revealed the agglomeration of oxide particles and formation of clusters. After annealing at 1373 K, no appreciable grain growth of yttria particles could be observed. X-ray photoelectron spectroscopy analysis was carried out for elemental analysis before and after chemical compatibility test of the coated samples in molten LiCl–KCl salt to identify the corrosive elements present on the yttria coatings. The chemical compatibility and thermal stability of the yttria coating on HD graphite in molten LiCl–KCl salt medium have been established. - Highlights: • Y{sub 2}O{sub 3} coating was deposited on graphite by pulsed laser deposition method. • Chemical compatibility of Y{sub 2}O{sub 3} coating in LiCl–KCl salt at 873 K was studied. • Gibbs free energy change was positive for Y{sub 2}O{sub 3} reaction with Cl{sub 2}, U and UCl{sub 3}. • Y{sub 2}O{sub 3} coating exhibited better corrosion performance in molten LiCl–KCl salt.

  12. Effect of power on growth of nanocrystalline silicon films deposited by VHF PECVD technique for solar cell applications

    Science.gov (United States)

    Juneja, Sucheta; Verma, Payal; Savelyev, Dmitry A.; Khonina, Svetlana N.; Sudhakar, S.; Kumar, Sushil

    2016-04-01

    An investigation of the effect of power on the deposition of nanocrystalline silicon thin films were carried out using a gaseous mixture of silane and hydrogen in the 60MHz assisted VHF plasma enhanced chemical vapor deposition (PECVD) technique. The power was varied from 10 to 50 watt maintaining all other parameters constant. Corresponding layer properties w.r.t. material microstructure, optical, hydrogen content and electrical transport are studied in detail. The structural properties have been studied by Raman spectroscopy and x-ray diffraction (XRD). The presence of nano-sized crystals and their morphology have been investigated using atomic force microscopy (AFM). The role of bonded hydrogen content in the films have been studied from the results of Fourier transform infrared spectroscopy. It was observed from the results that with increase in power, crystalline volume fraction increases and crystallite size changes from 4 to 9 nm. The optical band gap varies from 1.7 to 2.1eV due to quantum confinement effect and which further can be explained with reduced hydrogen content. These striking features of nc-Si films can be used to fabricate stable thin film solar cells.

  13. Characterization of Boron Carbonitride (BCN Thin Films Deposited by Radiofrequency and Microwave Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. A. Mannan

    2008-01-01

    Full Text Available Boron carbonitride (BCN thin films with a thickness of ~4 µ­m were synthesized on Si (100 substrate by radiofrequency and microwave plasma enhanced chemical vapor deposition using trimethylamine borane [(CH33N.BH3] as a molecular precursor. The microstructures of the films were evaluated using field emission scanning electron microscopy (FE-SEM and X-ray diffractometry (XRD. Fourier transform infrared spectroscopy (FT-IR and X-ray photoelectron spectroscopy (XPS were used to analyze the chemical bonding state and composition of the films. It has been observed that the films were adhered well to the silicon substrate even after being broken mechanically. XRD and FE-SEM results showed that the films were x-ray amorphous, rough surface with inhomogeneous microstructure. The micro hardness was measured by nano-indentation tester and was found to be approximately 2~7 GPa. FT-IR suggested the formation of the hexagonal boron carbonitride (h-BCN phase in the films. Broadening of the XPS peaks revealed that B, C and N atoms have different chemical bonds such as B-N, B-C and C-N. The impurity oxygen was detected (13~15 at.% as B-O and/or N-O.

  14. Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

    OpenAIRE

    Chia-Hsun Hsu; In-Cha Hsieh; Chia-Chi Tsou; Shui-Yang Lien

    2013-01-01

    Amorphous-like silicon (a-Si:H-like) thin films are prepared by 27.12 MHz plasma-enhanced chemical vapor deposition technique. The films are applied to p-i-n single junction thin film solar cells with varying i-layer thickness to observe the effects on the short-circuit current density, as well as the open-circuit voltage, fill factor, and conversion efficiency. The most significant experimental result is that Jsc has two different behaviors with increasing the i-layer thickness, which can be...

  15. Study of Metal Organic Chemical Vapour Deposition (MOCVD) semiconductors III-V hyperstructures with Secondary Ion Mass Spectrometry (SIMS)

    International Nuclear Information System (INIS)

    One of the most promising technologies in high efficiency solar cells is based on quaternary structures grown by epitaxial techniques as Metal Organic Chemical Vapour deposition (MOCVD). The semiconductors III-V structures are elaborated under tailored parameters, allowing the use of a broader area of the solar spectrum. Analytical techniques capable of providing accurate and precise information in cross sections about the composition and thickness of the layers are demanded. Secondary Ion Mass Spectrometry (SIMS) has been used for characterization of these structures due to its high depth resolution and sensitivity, stability and reproducibility. It was detected the diffusion process of Al and In across the cell interfaces and the layer diffusion over GaAs substrates. The Al diffusion was associated at incorrect incorporation of elements during growth process and the layer diffusion was associated at changes of manufacturing parameters. Such studies show the SIMS ability to diagnose of faults during the growth process, detection of impurities and incorrect diffusion of dopants that may affect the layer properties and the structure functionality

  16. Hybrid solar cells using CdS thin films deposited via spray pyrolysis technique

    International Nuclear Information System (INIS)

    The paper presents the photovoltaic performance of hybrid solar cells comprising of thin films of cadmium sulphide and poly(3-hexyl)thiophene. Cadmium sulphide thin films were deposited using spray pyrolysis technique. Current-voltage characterizations were performed for cadmium sulphide/poly(3-hexyl)thiophene heterojunctions in dark and under illumination (100 mWcm−2). The best device yields a short circuit current density of 1.54 mA/cm2, an open circuit voltage of 343 mV, and a power conversion efficiency of 0.15%. - Highlights: • Hybrid solar cells were fabricated using CdS and poly(3-hexyl)thiophene. • CdS thin films were grown by spray pyrolysis technique. • The best cell performance was achieved for the 100 nm thick CdS films. • The highest short circuit current was measured as 1.54 mAcm−2 for the best cell

  17. The pyrolytic decomposition of ATSB during chemical vapour deposition of thin alumina films

    OpenAIRE

    Haanappel, V.A.C.; Corbach, van, H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    The effect of the deposition temperature and the partial pressure of water on the thermal decomposition chemistry of aluminium-tri-sec-butoxide (ATSB) during metal organic chemical vapour deposition (MOCVD) is reported. The MOCVD experiments were performed in nitrogen at atmospheric pressure. The partial pressure of ATSB was 0.026 kPa (0.20 mmHg) and that of water was between 0 and 0.026 kPa (0–0.20 mmHg). The pyrolytic decomposition chemistry of ATSB was studied by mass spectrometry at tempe...

  18. Preparation of Dispersed Platinum Nanoparticles on a Carbon Nanostructured Surface Using Supercritical Fluid Chemical Deposition

    Directory of Open Access Journals (Sweden)

    Mineo Hiramatsu

    2010-03-01

    Full Text Available We have developed a method of forming platinum (Pt nanoparticles using a metal organic chemical fluid deposition (MOCFD process employing a supercritical fluid (SCF, and have demonstrated the synthesis of dispersed Pt nanoparticles on the surfaces of carbon nanowalls (CNWs, two-dimensional carbon nanostructures, and carbon nanotubes (CNTs. By using SCF-MOCFD with supercritical carbon dioxide as a solvent of metal-organic compounds, highly dispersed Pt nanoparticles of 2 nm diameter were deposited on the entire surface of CNWs and CNTs. The SCF-MOCFD process proved to be effective for the synthesis of Pt nanoparticles on the entire surface of intricate carbon nanostructures with narrow interspaces.

  19. Chemical vapor deposition of tungsten (CVD W) as submicron interconnection and via stud

    International Nuclear Information System (INIS)

    Blanket-deposited chemical vapor deposition of tungsten (CVD W) has been developed and implemented in a 4-Mbit DRAM and equivalent submicron VLSI technologies. CVD W was applied as contact stud, interconnect, and interlevel via stud. The technologies have been proven reliable under several reliability stress conditions. Major technical problems involved in CVD W processing, such as adhesion, contact resistance, etchability, and hole fill are discussed. A novel technique that uses TiN as a contact and adhesion layer is presented. This technique has lead to the resolution of the above technical problem and significantly improved the manufacturability of blanket CVD W processes

  20. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durmazucar, Hasan H.; Guenduez, Guengoer E-mail: ggunduz@metu.edu.tr

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  1. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    International Nuclear Information System (INIS)

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed

  2. Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum (Mo) as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35–60% in the range 400–4000 cm−1

  3. Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Wang, Qi-Liang; Lü, Xian-Yi; Li, Liu-An; Cheng, Shao-Heng; Li, Hong-Dong

    2010-04-01

    Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum (Mo) as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm-1.

  4. CdS thin films growth by ammonia free chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Jaber, A.Y.; Alamri, S.N.; Aida, M.S., E-mail: aida_salah2@yahoo.fr

    2012-02-29

    Cadmium Sulfide CdS thin films were deposited by chemical bath deposition technique using ethanolamine as complexing agent instead of commonly used ammonia to avoid its toxicity and volatility during film preparation. In order to investigate the film growth mechanism samples were prepared with different deposition times. A set of substrates were dropped in the same bath and each 30 minutes a sample is withdrawn from the bath, by this way all the obtained films were grown in the same condition. The films structure was analyzed by X rays diffraction. In early stage of growth the obtained films are amorphous, with increasing the deposition time, the films exhibits a pure hexagonal structure with (101) preferential orientation. The film surface morphology was studied by atomic force microscopy. From these observations we concluded that the early growth stage starts in the 3D Volmer-Weber mode, followed by a transition to the Stransky-Krastanov mode with increasing deposition time. The critical thickness of this transition is 120 nm. CdS quantum dots were formed at end of the film growth. The optical transmittance characterization in the UV-Visible range shows that the prepared films have a high transparency ranging from 60 to 80% for photons having wavelength greater than 600 nm. - Highlights: Black-Right-Pointing-Pointer CdS thin films are deposited by ammonia-free chemical bath deposition. Black-Right-Pointing-Pointer Films have hexagonal structure with (101) preferential orientation. Black-Right-Pointing-Pointer Growth begins in the Volmer-Weber mode and changes to the Stransky-Krastanov mode. Black-Right-Pointing-Pointer CdS quantum dots are formed in the late stage of growth.

  5. Growth of TiO2 anti-reflection layer on textured Si (100) wafer substrate by metal-organic chemical vapor deposition method.

    Science.gov (United States)

    Nam, Sang-Hun; Choi, Jin-Woo; Cho, Sang-Jin; Kimt, Keun Soo; Boo, Jin-Hyo

    2011-08-01

    Recently anti-reflective films (AR) have been intensely studied. Particularly for textured silicon solar cells, the AR films can further reduce the reflection of the incident light through trapping the incident light into the cells. In this work, TiO2 anti-reflection films have been grown on the textured Si (100) substrate which is processed in two steps, and the films are deposited using metal-organic chemical vapor deposition (MOCVD) with a precursor of titanium tetra-isopropoxide (TTIP). The effect of the substrate texture and the growth conditions of TiO2 films on the reflectance has been investigated. Pyramid size of textured silicon had approximately 2-9 microm. A well-textured silicon surface can lower the reflectance to 10%. For more reduced reflection, TiO2 anti-reflection films on the textured silicon were deposited at 600 degrees C using titanium tetra-isopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD), and the deposited TiO2 layers were then treated by annealing for 2 h in air at 600 and 1000 degrees C, respectively. In this process, the treated samples by annealing showed anatase and rutile phases, respectively. The thickness of TiO2 films was about 75 +/- 5 nm. The reflectance at specific wavelength can be reduced to 3% in optimum layer. PMID:22103185

  6. Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

    International Nuclear Information System (INIS)

    We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis due to its high heat and mass transfer efficiency and well-controlled flow parameters. Experimental studies of CVD microreactor technology are slow and expensive. Analytical solution of the governing equations is impossible due to the complexity of intertwined non-linear physical and chemical processes. Computer simulation is the most effective tool for design and optimization of microreactors. Our computational fluid dynamics model employs mass, momentum and energy balance equations for a laminar transient flow of a chemically reacting gas mixture at low Reynolds number. Simulation results show the influence of microreactor configuration and process parameters on SiO2 deposition rate and uniformity. We simulated three microreactors with the central channel diameter of 5, 10, 20 micrometers, varying gas flow rate in the range of 5-100 microliters per hour and temperature in the range of 300-800 °C. For each microchannel diameter we found an optimal set of process parameters providing the best quality of deposited material. The model will be used for optimization of the microreactor configuration and technological parameters to facilitate the experimental stage of this research

  7. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization.

    Science.gov (United States)

    Güzeldir, Betül; Sağlam, Mustafa

    2015-11-01

    Different chemical methods such as Successive Ionic Layer Adsorption and Reaction (SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide thin films on the glass substrates. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) spectroscopy and UV-vis spectrophotometry. The XRD and SEM studies showed that all the films exhibit polycrystalline nature and crystallinity of copper selenide thin films prepared with spray pyrolysis greater than spin coating and SILAR methods. From SEM and AFM images, it was observed copper selenide films were uniform on the glass substrates without any visible cracks or pores. The EDX spectra showed that the expected elements exist in the thin films. Optical absorption studies showed that the band gaps of copper selenide thin films were in the range 2.84-2.93 eV depending on different chemical methods. The refractive index (n), optical static and high frequency dielectric constants (ε0, ε∞) values were calculated by using the energy bandgap values for each deposition method. The obtained results from different chemical methods revealed that the spray pyrolysis technique is the best chemical deposition method to fabricate copper selenide thin films. This absolute advantage was lead to play key roles on performance and efficiency electrochromic and photovoltaic devices. PMID:26037495

  8. Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Juneja, Sucheta; Sudhakar, S., E-mail: sudhakars@nplindia.org; Gope, Jhuma; Lodhi, Kalpana; Sharma, Mansi; Kumar, Sushil

    2015-09-15

    Graphical abstract: AFM images of boron doped micro/nanocrystalline silicon films at different diborane gas flow. - Highlights: • High deposition rate of 10 Å/s was achieved for boron doped silicon films. • Wide range of optical band gap from 1.32 eV to 1.84 eV observed for the deposited films. - Abstract: Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si:H) thin films have been deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane (SiH{sub 4}) diluted in argon. Diborane (B{sub 2}H{sub 6}) was used as the dopant gas and deposition was carried out at substrate temperature of 200 °C. The diborane flow (F{sub B}) varied in the range 0.00–0.30. Here, we report the effects of B{sub 2}H{sub 6} doping on electronic, optical and structural properties of hydrogenated micro/nanocrystalline silicon films. The structural properties were analyzed by atomic force microscopy (AFM) and X-ray diffraction (XRD). The doped micro/nano crystalline silicon films presented a crystallographic orientation preferentially in the (1 1 1) and (2 2 0) plane. We resolve the deposition parameters that lead to the formation of p-type micro/nanocrystalline silicon thin films with very high value of conductivity and lower optical band gap. Correlations between structural and electrical properties were also studied. Based on temperature dependent conductivity measurements, it has been observed that the room temperature dark conductivity varies in the range 1.45 × 10{sup −4} Ω{sup −1} cm{sup −1} to 2.02 Ω{sup −1} cm{sup −1} for the B-doped films. Meanwhile, the corresponding value of activation energies decreased to 0.06 eV for the B-doped films, which indicates the doped μc/nc-Si films with high conductivity can be achieved and these films prove to be a very good candidate for application in amorphous and micro/nano crystalline silicon solar cells as a p-type window layer.

  9. The effects of chemical oxide on the deposition of tungsten by the silicon reduction of tungsten hexaflouride

    International Nuclear Information System (INIS)

    The effects of thin (chemical) oxide grown during the chemical cleaning of silicon wafers on the silicon reduction of tungsten hexaflouride have been investigated. Unlike tungsten deposition on samples without the chemical oxide, deposition thickness on those with the chemical oxide was found to be substantially thicker. Inspection by cross sectional SEM and TEM revealed the existence of micro-channels penetrating the tungsten film, reaching all the way from the surface of the film to the tungsten/silicon interface. These channels enable tungsten hexaflouride to reach the substrate, thus causing unlimited tungsten growth. Because the silicon surface participates directly in the reaction, it should be expected that the reaction itself be influenced by the chemical treatment of the surface prior to tungsten deposition. Under certain deposition conditions, and for properly prepared silicon surfaces, silicon reduction is known to result in self limiting tungsten deposition

  10. Sequential deposition as a route to high-performance perovskite-sensitized solar cells

    KAUST Repository

    Burschka, Julian

    2013-07-10

    Following pioneering work, solution-processable organic-inorganic hybrid perovskites - such as CH 3 NH 3 PbX 3 (X = Cl, Br, I) - have attracted attention as light-harvesting materials for mesoscopic solar cells. So far, the perovskite pigment has been deposited in a single step onto mesoporous metal oxide films using a mixture of PbX 2 and CH 3 NH 3 X in a common solvent. However, the uncontrolled precipitation of the perovskite produces large morphological variations, resulting in a wide spread of photovoltaic performance in the resulting devices, which hampers the prospects for practical applications. Here we describe a sequential deposition method for the formation of the perovskite pigment within the porous metal oxide film. PbI 2 is first introduced from solution into a nanoporous titanium dioxide film and subsequently transformed into the perovskite by exposing it to a solution of CH 3 NH 3 I. We find that the conversion occurs within the nanoporous host as soon as the two components come into contact, permitting much better control over the perovskite morphology than is possible with the previously employed route. Using this technique for the fabrication of solid-state mesoscopic solar cells greatly increases the reproducibility of their performance and allows us to achieve a power conversion efficiency of approximately 15 per cent (measured under standard AM1.5G test conditions on solar zenith angle, solar light intensity and cell temperature). This two-step method should provide new opportunities for the fabrication of solution-processed photovoltaic cells with unprecedented power conversion efficiencies and high stability equal to or even greater than those of today\\'s best thin-film photovoltaic devices. © 2013 Macmillan Publishers Limited. All rights reserved.

  11. Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition

    OpenAIRE

    Alpuim, P.; Chu, Virginia; Conde, João Pedro

    1999-01-01

    The effect of hydrogen dilution on the optical, transport, and structural properties of amorphous and microcrystalline silicon thin films deposited by hot-wire (HW) chemical vapor deposition and radio-frequency (rf) plasma-enhanced chemical vapor deposition using substrate temperatures (T-sub) of 100 and 25 degrees C is reported. Microcrystalline silicon (mu c-Si:H) is obtained using HW with a large crystalline fraction and a crystallite size of similar to 30 nm for hydrogen dilutions above 8...

  12. Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell

    Institute of Scientific and Technical Information of China (English)

    赵占霞; 崔容强; 孟凡英; 于化丛; 周之斌

    2004-01-01

    This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si ∶ H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h.

  13. Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells

    International Nuclear Information System (INIS)

    Atomic layer deposition (ALD) of TiS2 is investigated with titanium tetrachloride and hydrogen sulfide precursors. In-situ quartz crystal microbalance and ex-situ x-ray reflectivity measurements are carried out to study self-limiting deposition chemistry and material growth characteristics. The saturated growth rate is found to be ca. 0.5 Å/cycle within the ALD temperature window of 125–200 °C. As grown material is found poorly crystalline. ALD grown TiS2 is applied as a photon harvesting material for solid state sensitized solar cells with TiO2 as electron transport medium. Initial results with Spiro-OMeTAD as hole conducting layer show ca. 0.6% energy conversion efficiency under 1 sun illumination

  14. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    Science.gov (United States)

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-01

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films. PMID:16448130

  15. Analysis of solar chemical processes for hydrogen production from water splitting thermochemical cycles

    International Nuclear Information System (INIS)

    This paper presents a process analysis of ZnO/Zn, Fe3O4/FeO and Fe2O3/Fe3O4 thermochemical cycles as potential high efficiency, large scale and environmentally attractive routes to produce hydrogen by concentrated solar energy. Mass and energy balances allowed estimation of the efficiency of solar thermal energy to hydrogen conversion for current process data, accounting for chemical conversion limitations. Then, the process was optimized by taking into account possible improvements in chemical conversion and heat recoveries. Coupling of the thermochemical process with a solar tower plant providing concentrated solar energy was considered to scale up the system. An economic assessment gave a hydrogen production cost of 7.98$ kg-1 and 14.75$ kg-1 of H2 for, respectively a 55 MWth and 11 MWth solar tower plant operating 40 years

  16. The production of zinc by thermal dissociation of zinc oxide - solar chemical reactor design

    Energy Technology Data Exchange (ETDEWEB)

    Haueter, P.; Moeller, S.; Palumbo, R. [Paul Scherrer Institute, Villigen (Switzerland). Solar Process Technology; Steinfeld, A. [Swiss Federal Institute of Technology, Zurich (Switzerland). Dept. of Mechanical and Process Engineering

    1999-07-01

    We describe the design, fabrication, and preliminary test of a novel solar chemical reactor for conducting the thermal dissociation of ZnO into zinc and oxygen at above 2000 K. The reactor configuration features a windowed rotating cavity-receiver lined with ZnO particles that are held by centrifugal force. With this arrangement, ZnO is directly exposed to high-flux solar irradiation and serves simultaneously the functions of radiant absorber, thermal insulator, and chemical reactant. The reactor design respects the constraints imposed by both the chemistry of the decomposition reaction and the transitory nature of solar energy. A 10 kW prototype reactor, made from conventional reliable materials, was tested at PSI's high-flux solar furnace and exposed to peak solar radiation fluxes exceeding 3500 kW m{sup -2}. The reactor system proved to have low thermal inertia and resistance to thermal shocks. (author)

  17. The production of zinc by thermal dissociation of zinc oxide - solar chemical reactor design

    Energy Technology Data Exchange (ETDEWEB)

    Haueter, P.; Moeller, S.; Palumbo, R.; Steinfeld, A. [PSI and ETH Zurich (Switzerland)

    2000-07-01

    We describe the design, fabrication, and preliminary test of a novel solar chemical reactor for conducting the thermal dissociation of ZnO into zinc and oxygen at above 2000 K. The reactor configuration features a windowed rotating cavity-receiver lined with ZnO particles that are held by centrifugal force. With this arrangement, ZnO is directly exposed to high-flux solar irradiation and serves simultaneously the functions of radiant absorber, thermal insulator, and chemical reactant. The reactor design respects the constraints imposed by both the chemistry of the decomposition reaction and the transitory nature of solar energy. A 10 kW prototype reactor, made from conventional reliable materials, was tested at PSI's high-flux solar furnace and exposed to peak solar radiation fluxes exceeding 3500 kWm{sup -2}. The reactor system proved to have low thermal inertia and resistance to thermal shocks. (authors)

  18. Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2 chemistry

    Science.gov (United States)

    Wang, Junkang; Bulkin, Pavel; Florea, Ileana; Maurice, Jean-Luc; Johnson, Erik

    2016-07-01

    For the growth of hydrogenated microcrystalline silicon (μc-Si:H) thin films by low temperature plasma-enhanced chemical vapor deposition (PECVD), silicon tetrafluoride (SiF4) has recently attracted interest as a precursor due to the resilient optoelectronic performance of the resulting material and devices. In this work, μc-Si:H films are deposited at high rates (7 Å s‑1) from a SiF4 and hydrogen (H2) gas mixture by matrix-distributed electron cyclotron resonance PECVD (MDECR-PECVD). Increased substrate temperature and moderate ion bombardment energy (IBE) are demonstrated to be of vital importance to achieve high quality μc-Si:H films under such low process pressure and high plasma density conditions, presumably due to thermally-induced and ion-induced enhancement of surface species migration. Two well-defined IBE thresholds at 12 eV and 43 eV, corresponding respectively to SiF+ ion-induced surface and bulk atomic displacement, are found to be determinant to the final film properties, namely the surface roughness, feature size and crystalline content. Moreover, a study of the growth dynamics shows that the primary challenge to producing highly crystallized μc-Si:H films by MDECR-PECVD appears to be the nucleation step. By employing a two-step method to first prepare a highly crystallized seed layer, μc-Si:H films lacking any amorphous incubation layer have been obtained. A crystalline volume fraction of 68% is achieved with a substrate temperature as low as 120 °C, which is of great interest to broaden the process window for solar cell applications.

  19. Process development for the manufacture of an integrated dispenser cathode assembly using laser chemical vapor deposition

    Science.gov (United States)

    Johnson, Ryan William

    2005-07-01

    Laser Chemical Vapor Deposition (LCVD) has been shown to have great potential for the manufacture of small, complex, two or three dimensional metal and ceramic parts. One of the most promising applications of the technology is in the fabrication of an integrated dispenser cathode assembly. This application requires the deposition of a boron nitride-molybdenum composite structure. In order to realize this structure, work was done to improve the control and understanding of the LCVD process and to determine experimental conditions conducive to the growth of the required materials. A series of carbon fiber and line deposition studies were used to characterize process-shape relationships and study the kinetics of carbon LCVD. These studies provided a foundation for the fabrication of the first high aspect ratio multi-layered LCVD wall structures. The kinetics studies enabled the formulation of an advanced computational model in the FLUENT CFD package for studying energy transport, mass and momentum transport, and species transport within a forced flow LCVD environment. The model was applied to two different material systems and used to quantify deposition rates and identify rate-limiting regimes. A computational thermal-structural model was also developed using the ANSYS software package to study the thermal stress state within an LCVD deposit during growth. Georgia Tech's LCVD system was modified and used to characterize both boron nitride and molybdenum deposition independently. The focus was on understanding the relations among process parameters and deposit shape. Boron nitride was deposited using a B3 N3H6-N2 mixture and growth was characterized by sporadic nucleation followed by rapid bulk growth. Molybdenum was deposited from the MoCl5-H2 system and showed slow, but stable growth. Each material was used to grow both fibers and lines. The fabrication of a boron nitride-molybdenum composite was also demonstrated. In sum, this work served to both advance the

  20. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    International Nuclear Information System (INIS)

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiNX) and silicon dioxide (SiO2), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiNX buffer layer is wider than SiO2 and the maximum grain size slightly increased

  1. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Park, Joong-Hyun [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Han, Sang-Myeon [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Park, Sang-Geun [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Han, Min-Koo [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Shin, Moon-Young [LTPS Team, AMLCD Business, Samsung Electronics Co., Giheung, Yongin City (Korea, Republic of)

    2006-09-01

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN{sub X}) and silicon dioxide (SiO{sub 2}), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,{lambda}=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN{sub X} buffer layer is wider than SiO{sub 2} and the maximum grain size slightly increased.

  2. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes

    International Nuclear Information System (INIS)

    Silicon (Si) thin films were produced using an aerosol assisted atmospheric pressure chemical vapor deposition technique with liquid hydrosilane precursors cyclopentasilane (CPS, Si5H10) and cyclohexasilane (CHS, Si6H12). Thin films were deposited at temperatures between 300 and 500 °C, with maximum observed deposition rates of 55 and 47 nm/s for CPS and CHS, respectively, at 500 °C. Atomic force microscopic analyses of the films depict smooth surfaces with roughness of 4–8 nm. Raman spectroscopic analysis indicates that the Si films deposited at 300 °C and 350 °C consist of a hydrogenated amorphous Si (a-Si:H) phase while the films deposited at 400, 450, and 500 °C are comprised predominantly of a hydrogenated nanocrystalline Si (nc-Si:H) phase. The wide optical bandgaps of 2–2.28 eV for films deposited at 350–400 °C and 1.7–1.8 eV for those deposited at 450–500 °C support the Raman data and depict a transition from a-Si:H to nc-Si:H. Films deposited at 450 oC possess the highest photosensitivity of 102–103 under AM 1.5G illumination. Based on the growth model developed for other silanes, we suggest a mechanism that governs the film growth using CPS and CHS. - Highlights: • Si films via AA-APCVD are realized using cyclopentasilane (CPS) and cyclohexasilane (CHS). • Low activation energies of CPS and CHS allow Si thin films at low temperatures (300 °C). • High growth rates of 47–55 nm/s were obtained at 500 °C • Near device quality Si thin films with 2–3 orders of photosensitivity • Si thin films via AA-APCVD are amenable to continuous roll-to-roll manufacturing

  3. Effect of protic solvents on CdS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    In this study, cadmium sulfide (CdS) thin films are grown on glass substrates by chemical bath deposition (CBD) in an aqueous bath containing 10–20 vol.% alcohol. The roles of ethanol as a protic solvent that substantially improves the quality of films are explored extensively. The deposited films in an alcohol bath are found to be more compact and smoother with smaller CdS grains. The X-ray diffractograms of the samples confirm that all films were polycrystalline with mixed wurtzite (hexagonal) and zinkblende (cubic) phases. Raman spectra indicate that, for a film deposited in an alcohol bath, the position of 1LO is closer to the value for single crystal CdS, indicating that these films have a high degree of crystallinity. The as-deposited CdS thin films in a 10 vol.% alcohol bath were found to have the highest visible transmittance of 81.9%. XPS analysis reveals a stronger signal of C1s for samples deposited in the alcohol baths, indicating that there are more carbonaceous residues on the films with protic solvent than on the films with water. A higher XPS S/Cd atomic ratio for films deposited in an alcohol bath indicates that undesirable surface reactions (leading to sulfur containing compounds other than CdS) occur less frequently over the substrates. - Highlights: • Study of CBD-CdS films grown in an alcohol-containing aqueous bath is reported. • The deposited films in an alcohol bath are more compact with smaller CdS grains. • Raman spectra show that in an alcohol bath, the CdS film has a better crystallinity. • XPS reveals more carbon residues remain on the films deposited using alcohol bath. • In an alcohol bath, the undesirable surface reactions with Cd ions were hindered

  4. The Synthesized of Carbon Nano tubes from Palm Oil by Topas Atomizer Chemical Vapor Deposition Method

    International Nuclear Information System (INIS)

    This paper focused on preparation of Carbon Nano tubes (CNTs) based on palm oil as a natural resource precursor. The Topas Atomizer was utilized to vapor up the carbon gas into the reaction chamber of Chemical Vapor Deposition (CVD) to yield the CNTs in powder form at the inner wall of the Quartz tube. The purpose of this work was to investigate the effects of deposition temperature from 650 - 850 degree Celsius. The samples characteristics were analyzed by Raman spectroscopy. The results revealed that the increasing of the deposition temperature, the ID/IG ratio decreased from 650 - 850 degree Celsius. The results of Field Emission Scanning Electron Microscopy (FESEM) are also presented. (author)

  5. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm−1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm

  6. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    Science.gov (United States)

    Ulutas, Cemal; Gumus, Cebrail

    2016-03-01

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (Eg) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn3O4 phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  7. Growth of cubic boron nitride on diamond particles by microwave plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Saitoh, H.; Yarbrough, W. A.

    1991-06-01

    The nucleation and growth of cubic boron nitride (c-BN) onto diamond powder using solid NaBH4 in low pressure gas mixtures of NH3 and H2 by microwave plasma enhanced chemical vapor deposition has been studied. Boron nitride was deposited on submicron diamond seed crystals scattered on (100) silicon single crystal wafers and evidence was found for the formation of the cubic phase. Diamond powder surfaces appear to preferentially nucleate c-BN. In addition, it was found that the ratio of c-BN to turbostratic structure boron nitride (t-BN) deposited increases with decreasing NH3 concentration in H2. It is suggested that this may be due to an increased etching rate for t-BN by atomic hydrogen whose partial pressure may vary with NH3 concentration.

  8. Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

    Directory of Open Access Journals (Sweden)

    Valentina V. Utochnikova

    2012-01-01

    Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

  9. Simultaneous growth of diamond and nanostructured graphite thin films by hot-filament chemical vapor deposition

    Science.gov (United States)

    Ali, M.; Ürgen, M.

    2012-01-01

    Diamond and graphite films on silicon wafer were simultaneously synthesized at 850 °C without any additional catalyst. The synthesis was achieved in hot-filament chemical vapor deposition reactor by changing distance among filaments in traditional gas mixture. The inter-wire distance for diamond and graphite deposition was kept 5 and 15 mm, whereas kept constant from the substrate. The Raman spectroscopic analyses show that film deposited at 5 mm is good quality diamond and at 15 mm is nanostructured graphite and respective growths confirm by scanning auger electron microscopy. The scanning electron microscope results exhibit that black soot graphite is composed of needle-like nanostructures, whereas diamond with pyramidal featured structure. Transformation of diamond into graphite mainly attributes lacking in atomic hydrogen. The present study develops new trend in the field of carbon based coatings, where single substrate incorporate dual application can be utilized.

  10. A study on the dissolution of steam generator sludge deposit in EDTA based chemical cleaning formulations

    International Nuclear Information System (INIS)

    MAPS reactors faced the problem of heat exchanger failure due to the formation of pin-hole on the steam generator (SG) tubes owing to the accelerated corrosion by the impurities in the crevice between the tube sheet deposits and the SG tubes. EDTA based formulations have been evaluated for the chemical cleaning of the SG deposits with a view to select a suitable pH adjusting and oxidising agents. Based on the studies, a formulation containing EDTA and hydrogen peroxide for the dissolution of copper based constituents of the deposit and EDTA and hydrazine for the rest of the constituents have been recommended. As a pH adjusting agent either ammonia or ethylene diamine (EDA) can be used in formulations. (author)

  11. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Viswanathan S Saji; Han Cheol Choe

    2010-06-01

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was ∼ 2000 and tan ∼ 0.05.

  12. Synthesis and Growth Mechanism of Carbon Filaments by Chemical Vapor Deposition without Catalyst

    Institute of Scientific and Technical Information of China (English)

    Shuhe Liu; Feng Li; Shuo Bai

    2009-01-01

    Carbon filaments with diameter from several to hundreds micrometers were synthesized by chemical vapor deposition of methane without catalyst. The morphology, microstructure and mechanical properties of the carbon filament were investigated by scanning electronic microscopy, optical microscopy, X-ray diffraction and mechanical testing. The results show that the carbon filament is inverted cone shape and grows up along the gas flow direction. The stem of it is formed of annular carbon layers arranged in a tree ring structure while the head is made up of concentrical layers. The tensile strength of the carbon filament is increased after graphitization for the restructuring and growing large of graphene. The growth mechanism of carbon filament was proposed according to the results of two series of experiments with different deposition time and intermittent deposition cycles.

  13. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    Science.gov (United States)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  15. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Ferroelectric thin films of lead zirconate titanate Pb(ZrxTi1-x)O3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  16. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    International Nuclear Information System (INIS)

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 deg. C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs

  17. High quality antireflective ZnS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tec-Yam, S.; Rojas, J.; Rejon, V. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico); Oliva, A.I., E-mail: oliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico)

    2012-10-15

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl{sub 2}, NH{sub 4}NO{sub 3}, and CS(NH{sub 2}){sub 2} were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 Degree-Sign C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300-800 nm wavelength range, and a reflectance below 25% in the UV-Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: Black-Right-Pointing-Pointer High quality ZnS thin films were prepared by chemical bath deposition (CBD). Black-Right-Pointing-Pointer Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. Black-Right-Pointing-Pointer Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  18. Control of polyaniline deposition on microporous cellulose ester membranes by in situ chemical polymerization.

    Science.gov (United States)

    Qaiser, Asif A; Hyland, Margaret M; Patterson, Darrell A

    2009-11-12

    Polyaniline (PANI) can be deposited either on the surface or in the bulk of a microporous membrane by various chemical oxidative polymerization techniques. Each technique has distinctive effects on the PANI site and extent of deposition on the base membrane. In the present study, mixed cellulose ester (ME) membranes with tortuous pore morphology were used as base membranes. The chemical oxidative polymerization techniques employed, included polymerization using an in-house-built two-compartment permeation cell. The resultant composite membranes have been characterized by scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR-ATR), and electrical conductivity measurements. The results showed that PANI was layered on the pore walls of the membrane using two-compartment permeation cell. Vapor-phase polymerization yielded a surface layer of PANI with little deposition in the bulk. A distorted PANI surface layer was achieved by solution-phase (dip) polymerization. Moreover, asymmetric PANI deposition within the membrane bulk was evidenced using two-compartment permeation cell. Composite membranes synthesized using two-compartment cell showed highest levels of conductivity (approximately 10(-2) S/cm) as compared to the membranes modified by single-step solution-phase polymerization. FTIR-ATR results indicated the extent of PANI coating and its oxidation state which was identified as doped emeraldine PANI, from all the employed techniques. Asymmetric deposition and extent have been explained in terms of the physical and chemical reaction steps involved in the heterogeneous aniline polymerization reactions in the two-compartment cell technique. PMID:19888765

  19. XRD and UV-vis results of Tungstein oxide thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    In the experiment, using a simple, economical, chemical bath method for depositing tungstein oxide films, electrochromic tungstein oxide thin films were prepared from an aqueous solution of Na2WO4H2O and diethyl sulfate at boiling temperature on ITO coated glass substrate. The techniques such as X-ray and UV-VIS-spectroscopy diffraction were used for the characterization of the films. According to the results of X-ray and UV-VIS, WOx thin film is very promising material for electrochromic applications and this is simply and economically produced by chemical bath method

  20. LOW PRESSURE CHEMICAL VAPOR DEPOSITION (CVD) ON OXIDE AND NONOXIDE CERAMIC CUTTING TOOLS

    OpenAIRE

    Layyous, A.; Wertheim, R.

    1989-01-01

    Cutting tools made of Al2O3+TiC, silicon nitride, carbide, and stabilized ZrO2 were coated by chemical vapor deposition (CVD) with a multilayer of TiN, TiCN, TiC and Al2O3 in different combinations. The adhesion of the coated layers to the substrate, and the structure of the layers were investigated by optical microscopy, scanning electron microscopy (SEM) and Auger spectroscopy. This made it possible to analyze the chemical interaction between the substrate and the TiN at 1000°C. The cutting...

  1. High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

    Science.gov (United States)

    Zhang, W. J.; Jiang, X.; Matsumoto, S.

    2001-12-01

    Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface.

  2. Some aspects of the genesis of the uranium deposits of the Morrison formation in the Grants Uranium Region, New Mexico, inferred from chemical characteristics of the deposits

    International Nuclear Information System (INIS)

    Statistical treatment of the chemical data for samples from the Church Rock, Smith Lake, Ambrosia Lake, and Laguna districts, all in the Grants uranium region, San Juan basin, indicates that primary ore-forming processes concentrated copper, iron, manganese, molybdenum, selenium, vanadium, yttrium, arsenic, organic carbon, and sulfur, along with uranium. The initial uranium and vanadium mineralization occurred before compaction of the host rocks. A barium halo associated with all of these deposits formed as a result of secondary processes. Calcium and strontium were also enriched in the ores by secondary processes. Comparison of the chemical characteristics of redistributed deposits in the Church Rock district with those of primary deposits in the Grants uranium region indicates that calcium, manganese, strontium, yttrium, copper, iron, molybdenum, lead, selenium and vanadium are chemically separated from uranium during redistribution of the deposits in the Church Rock district. Comparisons of the chemical characteristics of the Church Rock deposits with those of the secondary deposits in the Ambrosia Lake district suggest some differences in the processes that were involved in the genesis of the redistributed deposits in these two areas

  3. Preparation of potassium tantalate niobate thin films by chemical solution deposition and their characterization

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Železný, Vladimír; Vaněk, Přemysl

    2005-01-01

    Roč. 25, č. 12 (2005), s. 2151-2154. ISSN 0955-2219 R&D Projects: GA ČR GA202/02/0238; GA MŠk(CZ) LN00A028; GA MŠk OC 528.001 Institutional research plan: CEZ:AV0Z40320502 Keywords : films * tantalates * chemical solution deposition Subject RIV: CA - Inorganic Chemistry Impact factor: 1.567, year: 2005

  4. Growth of Aligned Carbon Nanotubes through Microwave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    王升高; 汪建华; 马志斌; 王传新; 满卫东

    2005-01-01

    Aligned carbon nanotubes (CNTs) were synthesized on glass by microwave plasma chemical vapor deposition (MWPCVD) with a mixture of methane and hydrogen gases at the low temperature of 550 ℃. The experimental results show that both the self-bias potential and the density of the catalyst particles are responsible for the alignment of CNTs. When the catalyst particle density is high enough, strong interactions among the CNTs can inhibit CNTs from growing randomly and result in parallel alignment.

  5. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  6. Corrosion resistant chemical vapor deposited coatings for SiC and Si3N4

    OpenAIRE

    Graham, David W

    1993-01-01

    Silicon carbide and silicon nitride turbine engine components are susceptible to hot corrosion by molten sodium sulfate salts which are formed from impurities in the engine's fuel and air intake. Several oxide materials were identified which may be able to protect these components from corrosion and preserve their structural properties. Ta20, coatings were identified as one of the most promising candidates. Thermochemical calculations showed that the chemical vapor deposition(CVD) of tantalum...

  7. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition

    OpenAIRE

    Friel, I.; Clewes, S L; Dhillon, H. K.; Perkins, N.; Twitchen, D. J.; Scarsbrook, G. A.

    2009-01-01

    In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers, control over surface and bulk crystalline quality is of great importance. Inductively coupled plasma (ICP) etching using an Ar/Cl gas mixture is demonstrated to remove sub-surface damage of mechanically processed surfaces, whilst maintaining macro...

  8. Laser-assisted chemical liquid-phase deposition of metals for micro- and optoelectronics

    OpenAIRE

    Kordás, K. (Krisztián)

    2002-01-01

    Abstract The demands toward the development of simple and cost-effective fabrication methods of metallic structures with high lateral resolution on different substrates - applied in many fields of technology, such as in microelectronics, optoelectronics, micromechanics as well as in sensor and actuator applications - gave the idea to perform this research. Due to its simplicity, laser-assisted chemical liquid-phase deposition (LCLD) has been investigated and applied for the metallization o...

  9. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    OpenAIRE

    Sung-Jin Chang; Moon Seop Hyun; Sung Myung; Min-A Kang; Jung Ho Yoo; Lee, Kyoung G.; Bong Gill Choi; Youngji Cho; Gaehang Lee; Tae Jung Park

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from R...

  10. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition

    OpenAIRE

    Ma, Teng; Ren, Wencai; Zhang, Xiuyun; Liu, Zhibo; Gao, Yang; Yin, Li-Chang; Ma, Xiu-Liang; Ding, Feng; Cheng, Hui-Ming

    2013-01-01

    Controlled synthesis of wafer-sized single crystalline high-quality graphene is a great challenge of graphene growth by chemical vapor deposition because of the complicated kinetics at edges that govern the growth process. Here we report the synthesis of single-crystal graphene domains with tunable edges from zigzag to armchair via a growth–etching–regrowth process. Both growth and etching of graphene are strongly dependent on the edge structure. This growth/etching behavior is well explained...

  11. A new polarised hot filament chemical vapor deposition process for homogeneous diamond nucleation on Si(100)

    OpenAIRE

    Cojocaru, Costel Sorin; Larijani, Madjid; Misra, D. S.; Singh, Manoj K.; Veis, Pavel; Le Normand, Francois

    2004-01-01

    A new hot filament chemical vapor deposition with direct current plasma assistance (DC HFCVD) chamber has been designed for an intense nucleation and subsequent growth of diamond films on Si(100).Growth process as well as the If(V) characteristics of the DC discharge are reported. Gas phase constituents activation was obtained by a stable glow discharge between two grid electrodes coupled with two sets of parallel hot filaments settled in-between and polarised at the corresponding plasma pote...

  12. Fundamental Studies of the Chemical Vapour Deposition of Graphene on Copper

    OpenAIRE

    Lewis, Amanda

    2014-01-01

    The chemical vapour deposition (CVD) of graphene is the most promising route for production of large-area graphene films. However there are still major challenges faced by the field, including control of the graphene coverage, quality, and the number of layers. These challenges can be overcome by developing a fundamental understanding of the graphene growth process. This thesis contributes to the growing body of work on graphene CVD by uniquely exploring the gas phas...

  13. Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition.

    Science.gov (United States)

    Wang, Huan; Zhou, Yu; Wu, Di; Liao, Lei; Zhao, Shuli; Peng, Hailin; Liu, Zhongfan

    2013-04-22

    Substitutionally boron-doped monolayer graphene film is grown on a large scale by using a sole phenylboronic acid as the source in a low-pressure chemical vapor deposition system. The B-doped graphene film is a homogeneous monolayer with high crystalline quality, which exhibits a stable p-type doping behavior with a considerably high room-temperature carrier mobility of about 800 cm(2) V(-1) s(-1) . PMID:23463717

  14. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    OpenAIRE

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C; Jung, W.; Kim, M.; Park, C. -Y.

    2011-01-01

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall trans...

  15. A new doping method using metalorganics in chemical vapor deposition of 6H-SiC

    Science.gov (United States)

    Yoshida, S.; Sakuma, E.; Misawa, S.; Gonda, S.

    1984-01-01

    Aluminum doping was performed using triethylaluminum as the dopant in chemical vapor deposition of 6H-silicon carbide (SiC). Measurements on the electrical and cathodoluminescent properties of the epilayers indicate that the doping concentration of aluminum can be easily controlled by the flow rate of metalorganics. Electroluminescence was also observed for the pn junctions prepared by the successive growth of a nondoped n layer and a p layer doped with aluminum using metalorganics.

  16. Laser-induced chemical liquid deposition of discontinuous and continuous copper films

    Czech Academy of Sciences Publication Activity Database

    Ouchi, A.; Bastl, Zdeněk; Boháček, Jaroslav; Šubrt, Jan; Pola, Josef

    2007-01-01

    Roč. 201, č. 8 (2007), s. 4728-4733. ISSN 0257-8972 R&D Projects: GA AV ČR 1ET400400413 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z40320502; CEZ:AV0Z40720504 Keywords : copper films * laser photolysis * Cu(II) acetylacetonate * chemical liquid deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.678, year: 2007

  17. Silicon coatings on copper by chemical vapor deposition in fluidized bed reactors

    International Nuclear Information System (INIS)

    A coating technique based on (a) chemical vapor deposition, (b) fluidized bed technology and (c) subhalide chemistry was used to siliconize copper. Copper samples were siliconized in silicon beds kept at temperatures in the range 350-550degC. Alternating current (a.c.) impedance measurements indicate that the corrosion resistance of the coated samples is significantly better than that of uncoated copper. (orig.)

  18. Microstructure of boron nitride coated on nuclear fuels by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Three nuclear fuels, pure urania, 5% and 10% gadolinia containing fuels were coated with boron nitride to improve nuclear and physical properties. Coating was done by plasma enhanced chemical vapor deposition technique by using boron trichloride and ammonia. The specimens were examined under a scanning electron microscope. Boron nitride formed a grainy structure on all fuels. Gadolinia decreased the grain size of boron nitride. The fractal dimensions of fragmentation and of area-perimeter relation were determined. (orig.)

  19. Microstructure of boron nitride coated on nuclear fuels by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durmazucar, H.H. [Cumhuriyet Univ., Sivas (Turkey). Kimya Muehendisligi Boeluemue; Guenduez, G. [Kimya Muehendisligi Boeluemue, Orta Dogu Teknik Ueniversitesi, Ankara 06531 (Turkey); Toker, C. [Elektrik-Elektronik Muehendisligi Boeluemue, Orta Dogu Teknik Ueniversitesi, Ankara 06531 (Turkey)

    1998-08-03

    Three nuclear fuels, pure urania, 5% and 10% gadolinia containing fuels were coated with boron nitride to improve nuclear and physical properties. Coating was done by plasma enhanced chemical vapor deposition technique by using boron trichloride and ammonia. The specimens were examined under a scanning electron microscope. Boron nitride formed a grainy structure on all fuels. Gadolinia decreased the grain size of boron nitride. The fractal dimensions of fragmentation and of area-perimeter relation were determined. (orig.) 19 refs.

  20. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.