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Sample records for chemically deposited solar

  1. Chemical bath deposition for the fabrication of antireflective coating of spherical silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro [College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

    2006-12-15

    A CdS film as an antireflective (AR) coating has been successfully deposited on spherical silicon solar cells by chemical bath deposition, which is a novel deposition method of AR coatings for spherical silicon solar cells. The CBD method is a growth method in an aqueous solution and enables film formation for electronic devices with arbitrary shapes. The solar cell performance of the cell with the CdS film showed a 16% increase in short circuit current compared to that without an ARC. The result confirms that the CBD method is useful for the ARC fabrication of spherical silicon solar cells. (author)

  2. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  3. Fabrication of efficient planar perovskite solar cells using a one-step chemical vapor deposition method

    OpenAIRE

    Mohammad Mahdi Tavakoli; Leilei Gu; Yuan Gao; Claas Reckmeier; Jin He; Rogach, Andrey L; Yan Yao; Zhiyong Fan

    2015-01-01

    Organometallic trihalide perovskites are promising materials for photovoltaic applications, which have demonstrated a rapid rise in photovoltaic performance in a short period of time. We report a facile one-step method to fabricate planar heterojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conversion efficiency of up to 11.1%. We performed a systematic optimization of CVD parameters such as temperature and growth time to obtain high quality films of CH...

  4. Cu2ZnSn(S,Se)4 solar cells based on chemical bath deposited precursors

    International Nuclear Information System (INIS)

    A low-cost method has been developed to fabricate Cu2ZnSn(S,Se)4 solar cells. By this method, firstly SnS, CuS, and ZnS layers are successively deposited on a molybdenum/soda lime glass (Mo/SLG) substrate by chemical bath deposition. The Cu2ZnSn(S,Se)4 thin films are obtained by annealing the precursor in a selenium atmosphere utilizing a graphite box in the furnace. The obtained Cu2ZnSn(S,Se)4 thin films show large crystalline grains. By optimizing the preparation process, Cu2ZnSn(S,Se)4 solar cells with efficiencies up to 4.5% are obtained. The results imply that the Cu2ZnSn(S,Se)4/CdS interface and the back contact may be limiting factors for solar cell efficiency. - Highlights: • A chemical bath deposition method is developed to prepare Cu2ZnSn(S,Se)4 thin films. • The Cu2ZnSn(S,Se)4 thin films show good crystallization. • Solar cells with efficiencies up to 4.5% can be prepared based on the Cu2ZnSn(S,Se)4 layer. • The limiting factors for the solar cell efficiency are analyzed

  5. Indium sulfide thin films as window layer in chemically deposited solar cells

    International Nuclear Information System (INIS)

    Indium sulfide (In2S3) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO3)3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In2S3. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In2S3 thin films are photosensitive with an electrical conductivity value in the range of 10−3–10−7 (Ω cm)−1, depending on the film preparation conditions. We have demonstrated that the In2S3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO2:F/In2S3/Sb2S3/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm2. - Highlights: • In2S3 thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In2S3 films. • We made chemically deposited solar cells using the In2S3 thin films

  6. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    Science.gov (United States)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  7. Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Sharma

    2014-01-01

    Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

  8. All-chemically deposited Bi2S3/PbS solar cells

    International Nuclear Information System (INIS)

    We report on solar cells with a cross-sectional layout: TCO/window/Bi2S3/PbS, in which a commercial SnO2 transparent conductive oxide (TCO-PPG Sungate 500); chemically deposited window layers of CdS, ZnS or their oxides; n-type Bi2S3 (100 nm) and p-type PbS (360-550 nm) absorber films constitute the cell structures. The crystalline structure, optical, and electrical properties of the constituent films are presented. The open circuit voltage (Voc) and short-circuit current density (Jsc), for 1000 W/m2 solar radiation, of these solar cells depend on the window layers, and vary in the range, 130-310 mV and 0.5-5 mA/cm2, respectively. The typical fill factors (FF) of these cells are 0.25-0.42, and conversion efficiency, 0.1-0.4%.

  9. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  10. Thin film cadmium telluride solar cells by two chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.

    1988-01-15

    Cadmium telluride (CdTe) has long been recognized as a promising thin film photovoltaic material. In this work, polycrystalline p-CdTe films have been deposited by two chemical vapor deposition techniques, namely the combination of vapors of elements (CVE) and close-spaced sublimation (CSS). The CVE technique is more flexible in controlling the composition of deposited films while the CSS technique can provide very high deposition rates. The resistivity of p-CdTe films deposited by the CVE and CSS techniques can be controlled by intrinsic (cadmium vacancies) or extrinsic (arsenic or antimony) doping, and the lowest resistivity obtainable is about 200 ..cap omega.. cm. Both front-wall (CdTe/TCS/glass) and back-wall (TCS/CdTe/substrate) cells have been prepared. The back-wall cells are less efficient because of the high and irreproducible p-CdTe-substrate interface resistance. The CSS technique is superior to the CVE technique because of its simplicity and high deposition rates; however, the cleaning of the substrate in situ is more difficult. The interface cleanliness is an important factor determining the electrical and photovoltaic characteristics of the heterojunction. Heterojunction CdS/CdTe solar cells of area 1 cm/sup 2/ with conversion efficiencies higher than 10% have been prepared and junction properties characterized.

  11. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. PMID:27442970

  12. Investigation of metalorganic chemical vapor deposition grown CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sudharsanan, R.; Rohatgi, A. (Georgia Inst. of Tech., Atlanta (USA). School of Electrical Engineering)

    1991-03-01

    Polycrystalline CdTe films were grown on CdS/SnO{sub 2}/glass substrates by metalorganic chemical vapor deposition (MOCVD) for solar cell applications. Cells fabricated on these films showed efficiency of 9.7% which is the highest efficiency reported so far for MOCVD grown CdTe solar cells. The bias-dependent spectral response of the 9.7% efficient cell showed an external quantum efficiency greater than 0.85 at zero bias but a significant wavelength-independent reduction in spectral response at higher voltages. The interface recombination model was used to calculate the interface collection function term to quantify the open-circuit voltage (V{sub oc}) and fill factor losses in the high efficiency cell. It was found that the interface recombination reduces the V{sub oc} and fill factor by 60 mV and 0.1 respectively. It was estimated that efficiency as high as 13.5% can be achieved by improving CdTe/CdS interface quality. (orig.).

  13. Chemical deposition methods for Cd-free buffer layers in CI(G)S solar cells: Role of window layers

    International Nuclear Information System (INIS)

    It is currently possible to prepare Cd-free Cu(In,Ga)Se2-based solar cells with efficiencies similar or higher than their CdS references. In these cells, higher efficiencies are generally obtained from soft chemical-based techniques giving conformal depositions such as chemical bath deposition (CBD), ion layer gas reaction (ILGAR) or atomic layer deposition (ALD). However most of these devices are characterized by their pronounced transient behaviour. The aim of this paper is to compare these different chemical-based methods (CBD, ALD, ILGAR...) and to try to provide evidence for the dominant influence of the interface between the Cd-free buffer layer and the window layer on the performance and on the metastable electronic behaviour of these solar cells.

  14. Cu{sub 2}ZnSn(S,Se){sub 4} solar cells based on chemical bath deposited precursors

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao, E-mail: chao.gao@kit.edu [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Schnabel, Thomas; Abzieher, Tobias [Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Krämmer, Christoph [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Powalla, Michael [Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Light Technology Institute (LTI), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Kalt, Heinz; Hetterich, Michael [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany)

    2014-07-01

    A low-cost method has been developed to fabricate Cu{sub 2}ZnSn(S,Se){sub 4} solar cells. By this method, firstly SnS, CuS, and ZnS layers are successively deposited on a molybdenum/soda lime glass (Mo/SLG) substrate by chemical bath deposition. The Cu{sub 2}ZnSn(S,Se){sub 4} thin films are obtained by annealing the precursor in a selenium atmosphere utilizing a graphite box in the furnace. The obtained Cu{sub 2}ZnSn(S,Se){sub 4} thin films show large crystalline grains. By optimizing the preparation process, Cu{sub 2}ZnSn(S,Se){sub 4} solar cells with efficiencies up to 4.5% are obtained. The results imply that the Cu{sub 2}ZnSn(S,Se){sub 4}/CdS interface and the back contact may be limiting factors for solar cell efficiency. - Highlights: • A chemical bath deposition method is developed to prepare Cu{sub 2}ZnSn(S,Se){sub 4} thin films. • The Cu{sub 2}ZnSn(S,Se){sub 4} thin films show good crystallization. • Solar cells with efficiencies up to 4.5% can be prepared based on the Cu{sub 2}ZnSn(S,Se){sub 4} layer. • The limiting factors for the solar cell efficiency are analyzed.

  15. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  16. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-06-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  17. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Nouhi, A.; Stirn, R.J.; Meyers, P.V.; Liu, C.H.

    1989-05-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9% have been demonstrated. I--V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd/sub 0.85/Mn/sub 0.15/Te in place of CdTe as an i layer.

  18. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  19. Deposition of Lead Sulfide Nanostructure Films on TiO2 Surface via Different Chemical Methods due to Improving Dye-Sensitized Solar Cells Efficiency

    International Nuclear Information System (INIS)

    Graphical abstract: Display Omitted -- Highlights: • TiO2 surface was fabricated by electrophoresis deposition method. • PbS nanostructure layers were deposited on the TiO2 surface via different chemical methods. • The effects of chemical deposition methods on the optical properties of fabricated surfaces were studied. • Dye-sensitized solar cells (DSSCs) were made with the fabricated TiO2/PbS surfaces. • The effects of different deposition methods on DSSC performance were investigated. -- Abstract: In this work TiO2 P25 was deposited successfully on the FTO glass by electrophoresis method. Different chemical methods were served for deposition of nanosized PbS such as chemical bath deposition (CBD) and successive ion layer adsorption and reaction (SILAR). Also in this paper, nanosized lead sulfide was successfully deposited on TiO2 surface by hydrothermal (HT) and microwave (MW) methods. Also TiO2/PbS nanocomposite was synthesized via a simple hydrothermal method and deposited on FTO glass by doctor blade (DB) technique. Dye sensitized solar cells were fabricated from prepared electrodes, Pt as counter electrode, dye solution and electrolyte. The effect of chemical deposition methods were investigated on surface quality, optical properties and solar cell efficiency. The observation showed that using different chemical methods for deposition of PbS on TiO2 surface is led to fabrication solar cells with different efficiencies and performances. The electrodes were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), cross-section SEM, UV–vis diffuse reflectance spectroscopy (DRS), energy dispersive X-ray analysis (EDX) spectroscopy, atomic force microscopy (AFM), cyclic voltammetry (CV) and UV–Vis spectroscopy. Dye-sensitized solar cells (DSSC) made by the fabricated electrodes as working electrode and then were investigated by current density-voltage (J-V) curve and electrochemical

  20. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    International Nuclear Information System (INIS)

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  1. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  2. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Cd1−xZnxS and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd1−xZnxS coatings were applied onto 15 × 15 cm2 float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd0.36Zn0.64S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd0.36Zn0.64S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd0.36Zn0.64S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells

  3. Cu(In,Ga)Se{sub 2} solar cells with double layered buffers grown by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.Q.; Shi, J.H.; Zhang, D.W.; Liu, Q.Q.; Sun, Z.; Chen, Y.W. [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062 (China); Yang, Z. [Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240 (China); Huang, S.M., E-mail: engp5591@yahoo.com [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062 (China)

    2011-10-31

    In based mixture In{sub x}(OH,S){sub y} buffer layers deposited by chemical bath deposition technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. We report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)Se{sub 2} (CIGS) absorber and CdS or ZnS buffer by addition of a thin In based mixture layer. It is shown that the presence of thin In{sub x}(OH,S){sub y} at the CIGS absorber/CdS or ZnS buffer interfaces greatly improve the solar cell performances. The performances of CIGS cells using dual buffer layers composed of In{sub x}(OH,S){sub y}/CdS or In{sub x}(OH,S){sub y}/ZnS increased by 22.4% and 51.6%, as compared to the single and standard CdS or ZnS buffered cells, respectively.

  4. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  5. Oxidative Chemical Vapor Deposition of Neutral Hole Transporting Polymer for Enhanced Solar Cell Efficiency and Lifetime.

    Science.gov (United States)

    Jo, Won Jun; Nelson, Justin T; Chang, Sehoon; Bulović, Vladimir; Gradečak, Silvija; Strano, Michael S; Gleason, Karen K

    2016-08-01

    The concept of a neutral hole-transporting polymer is realized for the first time, by integrating patterned Cl(-) -doped poly(3,4-dimethoxythiophene) thin films into organic solar cells through a vacuum-based polymer vapor printing technique. Due to this novel polymer's neutrality, high transparency, good conductivity, and appropriate energy levels, the solar-cell efficiency and lifetime are significantly enhanced. PMID:27167214

  6. Understanding and improving the chemical vapor deposition process for solar grade silicon production

    OpenAIRE

    Ramos Cabal, Alba

    2015-01-01

    Esta Tesis Doctoral se centra en la investigación del proceso de producción de polisilicio para aplicaciones fotovoltaicas (FV) por la vía química; mediante procesos de depósito en fase vapor (CVD). El polisilicio para la industria FV recibe el nombre de silicio de grado solar (SoG Si). Por un lado, el proceso que domina hoy en día la producción de SoG Si está basado en la síntesis, destilación y descomposición de triclorosilano (TCS) en un reactor CVD -denominado reactor Siemens-. El materia...

  7. Characterization of CuInS{sub 2} thin films prepared by chemical bath deposition and their implementation in a solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lugo, S.; López, I. [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Peña, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Calixto, M. [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, C.P. 62580, Temixco, Morelos, México (Mexico); Hernández, T. [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Messina, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo”, S/N C.P. 63155, Tepic, Nayarit, México (Mexico); and others

    2014-10-31

    CuInS{sub 2} thin films were formed by the sequential deposition of In{sub 2}S{sub 3}–CuS layers on glass substrates, by chemical bath deposition technique, and heating these multilayer 1 h at 350 °C and 400 mPa. The morphology and thickness of the CuInS{sub 2} thin films were analysed by scanning electron microscopy, showing particles with elongated shape and length about 40 nm, and thickness of 267 and 348 nm for samples from 15 and 24 h of deposition time in the chemical bath of In{sub 2}S{sub 3}, respectively. The energy band gap values of the films were around 1.4 eV, whereas the electrical conductivity showed values from 64.91 to 4.11 × 10{sup −3} Ω{sup −1} cm{sup −1} for the samples of 15 and 24 h of In{sub 2}S{sub 3} deposition bath, respectively. The obtained CuInS{sub 2} films showed appropriate values for their application as an absorbing layer in photovoltaic structures of the type: glass/SnO{sub 2}:F/CdS/Sb{sub 2}S{sub 3}/CuInS{sub 2}/PbS/C/Ag. The whole structure was obtained through chemical bath deposition technique. The solar cell corresponding to 15 h of In{sub 2}S{sub 3} deposition duration bath showed energy-conversion efficiency (η) of 0.53% with open circuit voltage (V{sub oc}) of 530 mV, short circuit current density (J{sub sc}) of 2.43 mA cm{sup −2}, and fill factor (FF) of 0.41. In the case of the structure with 24 h of deposition of In{sub 2}S{sub 3} bath, η = 0.43% was measured with the following parameters: V{sub oc} = 330 mV, J{sub sc} = 4.78 mA cm{sup −2} and FF = 0.27. - Highlights: • CuInS{sub 2} films were formed by chemical bath deposition followed by a heat treatment. • Prepared CuInS{sub 2} thin films can work as an effective absorbing layer in a solar cell. • A complete solar cell structure was made by a chemical bath deposition method.

  8. Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS sub 2 thin film solar cells

    CERN Document Server

    Kaufmann, C A

    2002-01-01

    different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS sub 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) sub x S sub y or In(OH,O) sub x S sub y. In the case of In(OH,O) sub x S sub y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell characteristics could be developed. A CulnS sub 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS sub 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering...

  9. Optimization of the ZnS Buffer Layer by Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cells.

    Science.gov (United States)

    Jeon, Dong-Hwan; Hwang, Dae-Kue; Kim, Dae-Hwan; Kang, Jin-Kyu; Lee, Chang-Seop

    2016-05-01

    We evaluated a ZnS buffer layer prepared using a chemical bath deposition (CBD) process for application in cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells. The ZnS buffer layer showed good transmittance (above 90%) in the spectral range from 300 to 800 nm and was non-toxic compared with the CdS buffer layers normally used in CIGS solar cells. The CBD process was affected by several deposition conditions. The deposition rate was dependent on the ammonia concentration (complexing agent). When the ammonia concentration was either too high or low, a decrease in the deposition rate was observed. In addition, post heat treatments at high temperatures had detrimental influences on the ZnS buffer layers because portions of the ZnS thin films were transformed into ZnO. With optimized deposition conditions, a CIGS solar cell with a ZnS buffer layer showed an efficiency of 14.18% with a 0.23 cm2 active area under 100 mW/cm2 illumination.

  10. Performance and Loss Analyses of High-Efficiency Chemical Bath Deposition (CBD)-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells

    Science.gov (United States)

    Pudov, Alexei; Sites, James; Nakada, Tokio

    2002-06-01

    Chemically deposited ZnS has been investigated as a buffer layer alternative to cadmium sulfide (CdS) in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency of up to 18.1% based on chemical bath deposition (CBD)-ZnS{\\slash}CIGS heterostructures have been fabricated. This paper presents the performance and loss analyses of these cells based on the current-voltage (J-V) and spectral response curves, as well as comparisons with high efficiency CBD-CdS/CIGS and crystalline silicon counterparts. The CBD-ZnS/CIGS devices have effectively reached the efficiency of the current record CBD-CdS/CIGS cell. The effects of the superior current of the CBD-ZnS/CIGS cell and the superior junction quality of the CBD-CdS/CIGS cell on overall performance nearly cancel each other.

  11. Low-pressure, chemical vapor deposition polysilicon

    Science.gov (United States)

    Gallagher, B. D.; Crotty, G. C.

    1986-01-01

    The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system.

  12. Inline atmospheric pressure metal-organic chemical vapour deposition for thin film CdTe solar cells

    International Nuclear Information System (INIS)

    A detailed study has been undertaken to assess the deposition of CdTe for thin film devices via an inline atmospheric pressure metal-organic chemical vapour deposition (AP-MOCVD) reactor. The precursors for CdTe synthesis were released from a showerhead assembly normal to a transparent conductive oxide (TCO)/glass substrate, previously coated with a CdZnS window layer using a conventional batch AP-MOCVD reactor with horizontal flow delivery. Under a simulated illumination with air mass coefficient 1.5 (AM1.5), the initial best cell conversion efficiency (11.2%) for such hybrid cells was comparable to a reference device efficiency (∼ 13%), grown entirely in the AP-MOCVD batch reactor. The performance and structure of the hybrid and conventional devices are compared for spectral response, CdTe grain morphology and crystal structure. These preliminary results reported on the transfer from a batch to an inline AP-MOCVD reactor which holds a good potential for the large-scale production of thin film photovoltaics devices and related materials. - Highlights: • Inline metal-organic chemical vapour deposition (MOCVD) used to grow CdTe films • Desired dopant profiles in CdTe:As achieved with inline MOCVD reactor • Initial conversion efficiency of 11.2% was comparable to batch devices (∼ 13%). • Inline MOCVD holds a good potential for large-scale thin film photovoltaics production

  13. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  14. Improving low pressure chemical vapor deposited zinc oxide contacts for thin film silicon solar cells by using rough glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Steinhauser, J., E-mail: jerome.steinhauser@oerlikon.com; Boucher, J.-F.; Omnes, E.; Borrello, D.; Vallat-Sauvain, E.; Monteduro, G.; Marmelo, M.; Orhan, J.-B.; Wolf, B.; Bailat, J.; Benagli, S.; Meier, J.; Kroll, U.

    2011-12-01

    Compared to zinc oxide grown (ZnO) on flat glass, rough etched glass substrates decrease the sheet resistance (R{sub sq}) of zinc oxide layers grown on it. We explain this R{sub sq} reduction from a higher thickness and an improved electron mobility for ZnO layers deposited on rough etched glass substrates. When using this etched glass substrate, we also obtain a large variety of surface texture by changing the thickness of the ZnO layer grown on it. This new combination of etched glass and ZnO layer shows improved light trapping potential compared to ZnO films grown on flat glass. With this new approach, Micromorph thin film silicon tandem solar cells with high total current densities (sum of the top and bottom cell current density) of up to 26.8 mA cm{sup -2} were fabricated.

  15. The physics of plasma-enhanced chemical vapour deposition for large-area coating: industrial application to flat panel displays and solar cells

    International Nuclear Information System (INIS)

    Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates (∼1 m2) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, and electrical engineering, and material science. In such reactive glow discharge plasma slabs, excited at RF frequency (from 13.56 MHz up to ∼100 MHz), the thin-film deposition uniformity is determined by the gas flow distribution, as well as the RF voltage distribution along the electrodes, and by local plasma perturbations at the reactor boundaries. All these aspects can be approached by analytical and numerical modelling. Moreover, the film properties are largely determined by the plasma chemistry involving the neutral radicals contributing to film growth, the effect of ion bombardment, and the formation and trapping of dust triggered by homogeneous nucleation. This paper will review progress in this field, with particular emphasis on modelling developments. (author)

  16. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  17. Solar chemical heat pipe

    International Nuclear Information System (INIS)

    The performance of a solar chemical heat pipe was studied using CO2 reforming of methane as a vehicle for storage and transport of solar energy. The endothermic reforming reaction was carried out in an Inconel reactor, packed with a Rh catalyst. The reactor was suspended in an insulated box receiver which was placed in the focal plane of the Schaeffer Solar Furnace of the Weizman Institute of Science. The exothermic methanation reaction was run in a 6-stage adiabatic reactor filled with the same Rh catalyst. Conversions of over 80% were achieved for both reactions. In the closed loop mode the products from the reformer and from the metanator were compressed into separate storage tanks. The two reactions were run either separately or 'on-line'. The complete process was repeated for over 60 cycles. The overall performance of the closed loop was quite satisfactory and scale-up work is in progress in the Solar Tower. (authors). 35 refs., 2 figs

  18. Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells.

    Science.gov (United States)

    Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

    2015-09-23

    Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

  19. Photoluminescence characteristics of CdS layers deposited in a chemical bath and their correlation to CdS/CdTe solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Perez, R.; Aguilar-Hernandez, J.; Sastre-Hernandez, J.; Ximello-Quiebras, N.; Contreras-Puente, G.; Vigil-Galan, O.; Moreno-Garcia, E. [Escuela Superior de Fisica y Matematicas del IPN, Edificio 9, UPALM, DF 07738 (Mexico); Santana-Rodriguez, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Coyoacan 04510, DF (Mexico); Morales-Acevedo, A. [CINVESTAV-IPN, Depto. de Ingenieria Electrica, Avenida IPN No. 2508, DF 07360 (Mexico)

    2006-06-15

    In this work, we study CdS films processed by chemical bath deposition (CBD) using different thiourea concentrations in the bath solution with post-thermal treatments using CdCl{sub 2}. We study the effects of the thiourea concentration on the photovoltaic performance of the CdS/CdTe solar cells, by the analysis of the I-V curve, for S/Cd ratios in the CBD solution from 3 to 8. In this range of S/Cd ratios the CdS/CdTe solar cells show variations of the open circuit voltage (V{sub oc}), the short circuit current (J{sub sc}) and the fill factor (FF). Other experimental data such as the optical transmittance and photoluminescence were obtained in order to correlate to the I-V characteristics of the solar cells. The best performance of CdS-CdTe solar cells made with CdS films obtained with a S/Cd ratio of 6 is explained in terms of the sulfur vacancies to sulfur interstitials ratio in the CBD-CdS layers. (author)

  20. Chemical bath deposition route for the synthesis of ultra-thin CuIn(S,Se){sub 2} based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo, S. [Universidad Autónoma de Nuevo León (UANL), Fac. de Ciencias Químicas, Av. Universidad S/N, Ciudad Universitaria, San Nicolás de Los Garza, Nuevo León C.P. 66451 (Mexico); Sánchez, Y.; Neuschitzer, M.; Xie, H.; Insignares-Cuello, C.; Izquierdo-Roca, V. [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona (Spain); Peña, Y. [Universidad Autónoma de Nuevo León (UANL), Fac. de Ciencias Químicas, Av. Universidad S/N, Ciudad Universitaria, San Nicolás de Los Garza, Nuevo León C.P. 66451 (Mexico); Saucedo, E., E-mail: esaucedo@irec.cat [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona (Spain)

    2015-05-01

    CuIn(S,Se){sub 2} (CISSe) photovoltaic grade thin films are usually grown by expensive vacuum based methods or chemical routes that require highly toxic precursors. In this work, we present the synthesis of CISSe absorbers by a simple chemical bath deposition (CBD) route. In the first step, In{sub 2}S{sub 3}/Cu{sub 2−x}S stack was deposited as a precursor by CBD on Mo-coated soda lime glass substrates, using respectively thioacetamide and N,N′-dimethylthiourea as S source. Then the CISSe thin films were synthesized by the precursor's selenization at 450 °C. The obtained films were characterized by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The tetragonal chalcopyrite structure of CISSe was identified by XRD and Raman, confirming that the major part of S was replaced by Se. SEM images show a compact and homogeneous film and by cross-section the thickness was estimated to be around 700 nm. Solar cells prepared with these absorbers exhibit an open circuit voltage of 369 mV, a short circuit current density of 13.7 mA/cm{sup 2}, a fill factor of 45% and an efficiency of 2.3%. - Highlights: • Deposition of In{sub 2}S{sub 3}/Cu{sub 2−x}S multi-stacks by chemical bath deposition • Synthesis of CuIn(S,Se){sub 2} via a two stage process • Demonstration of the viability of this low cost method to produce photovoltaic grade CuIn(S,Se){sub 2}.

  1. Humid environment stability of low pressure chemical vapor deposited boron doped zinc oxide used as transparent electrodes in thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steinhauser, Jerome, E-mail: jerome.steinhauser@oerlikon.com [Institute of Microtechnology (IMT), University of Neuchatel, CH-2000 Neuchatel (Switzerland); Meyer, Stefan; Schwab, Marlene; Fay, Sylvie; Ballif, Christophe [Institute of Microtechnology (IMT), University of Neuchatel, CH-2000 Neuchatel (Switzerland); Kroll, U.; Borrello, D. [Oerlikon Solar-Lab, 2000 Neuchatel (Switzerland)

    2011-10-31

    The stability in humid environment of low pressure chemical vapor deposited boron doped zinc oxide (LPCVD ZnO:B) used as transparent conductive oxide in thin film silicon solar cells is investigated. Damp heat treatment (exposure to humid and hot atmosphere) induces a degradation of the electrical properties of unprotected LPCVD ZnO:B layers. By combining analyses of the electrical and optical properties of the films, we are able to attribute this behavior to an increase of electron grain boundary scattering. This is in contrast to the intragrain scattering mechanisms, which are not affected by damp heat exposure. The ZnO stability is enhanced for heavily doped films due to easier tunneling through potential barrier at grain boundaries.

  2. Effects of annealing temperature on crystallisation kinetics and properties of polycrystalline Si thin films and solar cells on glass fabricated by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tao Yuguo, E-mail: yuguo.tao@hotmail.com [Photovoltaics Centre of Excellence, University of New South Wales, Sydney NSW 2052 (Australia); Varlamov, Sergey; Jin, Guangyao [Photovoltaics Centre of Excellence, University of New South Wales, Sydney NSW 2052 (Australia); Wolf, Michael; Egan, Renate [CSG Solar Pty Ltd, Sydney, NSW (Australia)

    2011-10-31

    Solid-phase crystallisation of Si thin films on glass fabricated by plasma enhanced chemical vapour deposition is compared at different annealing temperatures. Four independent techniques, optical transmission microscopy, Raman and UV reflectance spectroscopy, and X-ray diffraction, are used to characterise the crystallisation kinetics and film properties. The 1.5 {mu}m thick films with the n+/p-/p+ solar cell structure have incubation times of about 300, 53, and 14 min and full crystallisation times of about 855, 128, and 30 min at 600 deg. C, 640 deg. C, and 680 deg. C respectively. Estimated activation energies for incubation and crystal growth are 2.7 and 3.2 eV respectively. The average grain size in the resulting polycrystalline Si films measured from scanning electron microscopy images gradually decreases with a higher annealing temperature and the crystal quality becomes poorer according to the Raman, UV reflection, and X-ray diffraction results. The dopant activation and majority carrier mobilities in heavily doped n+ and p+ layers are similar for all crystallisation temperatures. Both the open-circuit voltage and the spectral response are lower for the cells crystallised at higher temperatures and the minority carrier diffusion lengths are shorter accordingly although they are still longer than the cell thickness for all annealing temperatures. The results indicate that shortening the crystallisation time by merely increasing the crystallisation temperature offers little or no merits for PECVD polycrystalline Si thin-film solar cells on glass.

  3. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    Science.gov (United States)

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-01

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV). PMID:26855162

  4. Simple Chemical Vapor Deposition Experiment

    Science.gov (United States)

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  5. Preparation of Cauliflower-like ZnO Films by Chemical Bath Deposition:Photovoltaic Performance and Equivalent Circuit of Dye-sensitized Solar Cells

    Institute of Scientific and Technical Information of China (English)

    Yuqiao Wang; Xia Cui; Yuan Zhang; Xiaorui Gao; Yueming Sun

    2013-01-01

    The uniform cauliflower-like ZnO films were deposited on the conducting substrate by a chemical bath deposition in urea/water solution.The film structure and morphology were characterized by X-ray diffraction,thermogravimetric differential thermal analysis,energy dispersive spectroscopy,selected area electron diffraction,field emission scanning electron microscopy and high resolution transmission electron microscopy.The average diameter of ZnO nanoparticles and the petal thickness were 25 nm and 8 μm,respectively.Dyesensitized solar cells based on the cauliflower-like ZnO film electrode showed the short-circuit current density of 6.08 mA/cm2,the open-circuit photovoltage of 0.66 V,the fill factor of 0.55 and the overall conversion efficiency of 2.18%.The equivalent circuit of cells based on the ZnO film electrodes was measured by the electrochemical impedance spectroscopy.Furthermore,the analysis of equivalent circuit provided the relationship between the cell performance and the interfacial resistance,such as the shunt resistance and the series resistance.

  6. The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm(sup -3)) were achieved

  7. Chemical and electronic interface structure of spray pyrolysis deposited undoped and Al-doped ZnO thin films on a commercial Cz-Si solar cell substrate

    Energy Technology Data Exchange (ETDEWEB)

    Gabas, M.; Ramos-Barrado, J.R. [Dpto. de Fisica Aplicada I, Lab. de Materiales y Superficies, Universidad de Malaga 29071 Malaga (Spain); Barrett, N.T. [CEA DSM/IRAMIS/SPCSI, CEA Saclay, 91191 Gif sur Yvette (France); Gota, S. [Laboratoire Leon Brillouin, UMR 012 CEA-CNRS CEA Saclay, 91191 Gif sur Yvette (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, CSIC, Americo Vespucio 49, 41092 Sevilla (Spain); Lopez-Escalante, M.C. [Isofoton S.A., Parque Tecnologico de Andalucia, Severo Ochoa, 50, 29590 Malaga (Spain)

    2009-08-15

    We have studied differences in the interface between undoped and Al-doped ZnO thin films deposited on commercial Si solar cell substrates. The undoped ZnO film is significantly thicker than the Al-doped film for the same deposition time. An extended silicate-like interface is present in both samples. Transmission electron microscopy (TEM) and photoelectron spectroscopy (PES) probe the presence of a zinc silicate and several Si oxides in both cases. Although Al doping improves the conductivity of ZnO, we present evidence for Al segregation at the interface during deposition on the Si substrate and suggest the presence of considerable fixed charge near the oxidized Si interface layer. The induced distortion in the valence band, compared to that of undoped ZnO, could be responsible for considerable reduction in the solar cell performance. (author)

  8. Electrical characterization of annealed chemical-bath-deposited CdS films and their application in superstrate configuration CdTe/CdS solar cells

    International Nuclear Information System (INIS)

    Application of chemical-bath-deposited CdS in the superstrate configuration of CdTe/CdS solar cells involving CdCl2:O2 heat treatment of CdTe/CdS structures at about 400 °C is problematic. Namely, the vertical capillary surfaces (grain boundaries) between the columnar CdS grains perform as fast diffusion channels leading to the emergence of short circuits between the absorber and front contact. It was assumed that the grain boundaries contain residual hydroxy-oxide type compounds and form electrical barriers between columnar grains in the lateral direction of the CdS layer and that the electrical methods should be indicative of the behavior of grain boundaries in the annealing process. All samples were characterized by temperature dependence of DC conductivity in a temperature range of 50-300 K, X-ray diffraction, and scanning electron microscope. It has been found that the deeper layers of H2 and N2 annealed CdS preserve residual hydroxide, which released the gas phase in the recrystallization process of the chloride processing and created porosity on the CdTe/CdS interface. - Highlights: • We examine interface of CdS/CdTe structures after chloride heat treatment. • The mechanism of the formation of porosity in the CdS/CdTe interface is suggested. • Chloride heat treatment causes also recrystallization of CdS. • The gap between CdS and CdTe is minimal due to CdO on the grain boundaries of CdS

  9. Electrical characterization of annealed chemical-bath-deposited CdS films and their application in superstrate configuration CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Graf, A., E-mail: aleksandr.graf@gmail.com [Department of Physics, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Department of Materials Science, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Maticiuc, N.; Spalatu, N.; Mikli, V. [Department of Materials Science, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Mere, A. [Department of Physics, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Department of Materials Science, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Gavrilov, A. [Department of Physics, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Hiie, J. [Department of Materials Science, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia)

    2015-05-01

    Application of chemical-bath-deposited CdS in the superstrate configuration of CdTe/CdS solar cells involving CdCl{sub 2}:O{sub 2} heat treatment of CdTe/CdS structures at about 400 °C is problematic. Namely, the vertical capillary surfaces (grain boundaries) between the columnar CdS grains perform as fast diffusion channels leading to the emergence of short circuits between the absorber and front contact. It was assumed that the grain boundaries contain residual hydroxy-oxide type compounds and form electrical barriers between columnar grains in the lateral direction of the CdS layer and that the electrical methods should be indicative of the behavior of grain boundaries in the annealing process. All samples were characterized by temperature dependence of DC conductivity in a temperature range of 50-300 K, X-ray diffraction, and scanning electron microscope. It has been found that the deeper layers of H{sub 2} and N{sub 2} annealed CdS preserve residual hydroxide, which released the gas phase in the recrystallization process of the chloride processing and created porosity on the CdTe/CdS interface. - Highlights: • We examine interface of CdS/CdTe structures after chloride heat treatment. • The mechanism of the formation of porosity in the CdS/CdTe interface is suggested. • Chloride heat treatment causes also recrystallization of CdS. • The gap between CdS and CdTe is minimal due to CdO on the grain boundaries of CdS.

  10. Solar energy conversion. Chemical aspects

    Energy Technology Data Exchange (ETDEWEB)

    Likhtenshtein, Gertz [Ben-Gurion Univ. of the Negev, Beersheba (Israel). Dept. of Chemistry

    2012-07-01

    Finally filling a gap in the literature for a text that also adopts the chemist's view of this hot topic, Professor Likhtenshtein, an experienced author and internationally renowned scientist, considers different physical and engineering aspects in solar energy conversion. From theory to real-life systems, he shows exactly which chemical reactions take place when converting light energy, providing an overview of the chemical perspective from fundamentals to molecular harvesting systems and solar cells. This essential guide will thus help researchers in academia and industry better understand solar energy conversion, and so ultimately help this promising, multibillion euro/dollar field to expand. (orig.)

  11. Aerosol Deposition and Solar Panel Performance

    Science.gov (United States)

    Arnott, W. P.; Rollings, A.; Taylor, S. J.; Parks, J.; Barnard, J.; Holmes, H.

    2015-12-01

    Passive and active solar collector farms are often located in relatively dry desert regions where cloudiness impacts are minimized. These farms may be susceptible to reduced performance due to routine or episodic aerosol deposition on collector surfaces. Intense episodes of wind blown dust deposition may negatively impact farm performance, and trigger need to clean collector surfaces. Aerosol deposition rate depends on size, morphology, and local meteorological conditions. We have developed a system for solar panel performance testing under real world conditions. Two identical 0.74 square meter solar panels are deployed, with one kept clean while the other receives various doses of aerosol deposition or other treatments. A variable load is used with automation to record solar panel maximum output power every 10 minutes. A collocated sonic anemometer measures wind at 10 Hz, allowing for both steady and turbulent characterization to establish a link between wind patterns and particle distribution on the cells. Multispectral photoacoustic instruments measure aerosol light scattering and absorption. An MFRSR quantifies incoming solar radiation. Solar panel albedo is measured along with the transmission spectra of particles collected on the panel surface. Key questions are: At what concentration does aerosol deposition become a problem for solar panel performance? What are the meteorological conditions that most strongly favor aerosol deposition, and are these predictable from current models? Is it feasible to use the outflow from an unmanned aerial vehicle hovering over solar panels to adequately clean their surface? Does aerosol deposition from episodes of nearby forest fires impact performance? The outlook of this research is to build a model that describes environmental effects on solar panel performance. Measurements from summer and fall 2015 will be presented along with insights gleaned from them.

  12. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  13. Use of different Zn precursors for the deposition of Zn(S,O) buffer layers by chemical bath for chalcopyrite based Cd-free thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saez-Araoz, R.; Lux-Steiner, M.C. [Hahn Meitner Institut, Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Ennaoui, A.; Kropp, T.; Veryaeva, E. [Hahn Meitner Institut, Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co. KG, Munich (Germany)

    2008-10-15

    Progress in fabricating Cu(In,Ga)(S,Se){sub 2} (CIGSSe) solar cells with Zn(S,O) buffer layers prepared by chemical bath deposition (CBD) is discussed. The effect of different Zn salt precursors on solar cell device performance is investigated using production scale CIGSSe absorbers provided by AVANCIS GmbH and Co. KG. The CBD process has been developed at the Hahn-Meitner-Institut (HMI) using zinc nitrate, zinc sulphate or zinc chloride as zinc precursor. An average efficiency of 14.2{+-}0.8% is obtained by using one-layer CBD Zn(S,O) The dominant recombination path for well performing solar cells is discussed based on the results obtained from temperature dependent J(V) analysis. The structure and morphology of buffer layers deposited using zinc nitrate and zinc sulphate has been studied by means of transmission electron micrographs of glass/Mo/CIGSSe/Zn(S,O) structures. Results show a conformal coverage of the absorber by a Zn(S,O) layer of 15-25 nm consisting of nanocrystals with radii of {proportional_to}5 nm. XAES analysis of the buffer layer reveals a similar surface composition for buffer layers deposited with zinc nitrate and zinc sulphate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Wet-Chemical Surface Texturing of Sputter-Deposited ZnO:Al Films as Front Electrode for Thin-Film Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Xia Yan

    2015-01-01

    Full Text Available Transparent conductive oxides (TCOs play a major role as the front electrodes of thin-film silicon (Si solar cells, as they can provide optical scattering and hence improved photon absorption inside the devices. In this paper we report on the surface texturing of aluminium-doped zinc oxide (ZnO:Al or AZO films for improved light trapping in thin-film Si solar cells. The AZO films are deposited onto soda-lime glass sheets via pulsed DC magnetron sputtering. Several promising AZO texturing methods are investigated using diluted hydrochloric (HCl and hydrofluoric acid (HF, through a two-step etching process. The developed texturing procedure combines the advantages of the HCl-induced craters and the smaller and jagged—but laterally more uniform—features created by HF etching. In the two-step process, the second etching step further enhances the optical haze, while simultaneously improving the uniformity of the texture features created by the HCl etch. The resulting AZO films show large haze values of above 40%, good scattering into large angles, and a surface angle distribution that is centred at around 30°, which is known from the literature to provide efficient light trapping for thin-film Si solar cells.

  15. Chemical-vapor-deposition reactor

    Science.gov (United States)

    Chern, S.

    1979-01-01

    Reactor utilizes multiple stacked trays compactly arranged in paths of horizontally channeled reactant gas streams. Design allows faster and more efficient deposits of film on substrates, and reduces gas and energy consumption. Lack of dead spots that trap reactive gases reduces reactor purge time.

  16. CdS films deposited by chemical bath under rotation

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

    2010-08-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  17. Influence of Triethanolamine on the Chemical Bath Deposited NiS Thin Films

    OpenAIRE

    Anuar Kassim; Ho S. Min; Tan W. Tee; Ngai C. Fei

    2011-01-01

    Problem statement: Recently, many scientists looking for new chalcogenide materials for the solar cell applications. Nowadays, silicon-based solar cell became dominant products in the market. Because of expensive silicon-based solar cells, scientists hope replaces it with cheaper chalcogenide materials. Approach: The binary chalcogenide materials were deposited onto microscope glass slide using simple chemical bath deposition method. Here, we study the influence of complex...

  18. Performance improvement of inverted organic solar cells by adding ultrathin Al2O3 as an electron selective layer and a plasma enhanced chemical vapor deposition of SiOx encapsulating layer

    International Nuclear Information System (INIS)

    In this paper, we report the performance improvement of inverted organic solar cells by adding an ultrathin electron selective layer of Al2O3 prepared between the indium tin oxide (ITO) electrode and the active transport layer through atomic layer deposition (ALD). We evaluated the cell shelf-life after encapsulating with SiOx-coated polyethylene terephthalate, where the SiOx layer was made by plasma enhanced chemical vapor deposition (PECVD). It was found that the devices with ALD Al2O3 have a higher open circuit voltage than those without the ALD Al2O3 layer. Al2O3 deposited on an ITO electrode decreased the work function of ITO. Furthermore, based on the current density–voltage curves of the initial devices showing a pronounced S-shape, we soaked the cells with the ultraviolet (UV) light process. Then we obtained a higher efficiency in these ALD Al2O3 treated devices. With a careful analysis by atomic force microscopic and X-ray photoelectron spectroscopy, we believe that the UV light soaking process affected both ITO and Al2O3. Further, after the encapsulation by PECVD SiOx, our devices achieved a shelf-life of over 500 h for 50% retained cell efficiency. - Highlights: • Atomic layer deposition of Al2O3 improved the property of inverted organic solar cells. • Ultraviolet light soaking affected electrode work function and Al2O3 conductivity. • SiOx coating enveloped cells can achieve a 500 h shelf-life

  19. Paraffin wax deposits and chemical inhibitors

    Energy Technology Data Exchange (ETDEWEB)

    Mendell, J.L.

    1970-01-01

    Solutions to this problem becomes necessary with the advent of extremely deep production, offshore production, and the probability of ocean-floor completions. The reasons for paraffin-wax accumulations are many and difficult to pinpoint. Inhibition of these paraffin deposits appears to be the best solution. Paraffin solvents and inhibitors are as follows: solvents, wetting agents, dispersants, and crystal modifiers. Solvents are effective, but can harm a refinery catalyst and create health hazards. Wetting agents and dispersants comprise the majority of chemicals used as paraffin wax inhibitors. Crystal modifiers are relatively new and may provide the most efficient means of reducing deposition. Evaluations of chemical paraffin inhibitors are outlined. Field test results which consider the various chemicals tested may give satisfactory results in determining which particular chemical can solve the problem of the particular situation. (38 refs.)

  20. Chemical vapor deposition coating for micromachines

    Energy Technology Data Exchange (ETDEWEB)

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  1. The atmospheric chemical vapour deposition of coatings on glass

    CERN Document Server

    Sanderson, K D

    1996-01-01

    The deposition of thin films of indium oxide, tin doped indium oxide (ITO) and titanium nitride for solar control applications have been investigated by Atmospheric Chemical Vapour Deposition (APCVD). Experimental details of the deposition system and the techniques used to characterise the films are presented. Results from investigations into the deposition parameters, the film microstructure and film material properties are discussed. A range of precursors were investigated for the deposition of indium oxide. The effect of pro-mixing the vaporised precursor with an oxidant source and the deposition temperature has been studied. Polycrystalline In sub 2 O sub 3 films with a resistivity of 1.1 - 3x10 sup - sup 3 OMEGA cm were obtained with ln(thd) sub 3 , oxygen and nitrogen. The growth of ITO films from ln(thd) sub 3 , oxygen and a range of tin dopants is also presented. The effect of the dopant precursor, the doping concentration, deposition temperature and the effect of additives on film growth and microstr...

  2. Solar System chemical abundances corrected for systematics

    OpenAIRE

    Gonzalez, Guillermo

    2014-01-01

    The relative chemical abundances between CI meteorites and the solar photosphere exhibit a significant trend with condensation temperature. A trend with condensation temperature is also seen when the solar photospheric abundances are compared to those of nearby solar twins. We use both these trends to determine the alteration of the elemental abundances of the meteorties and the photosphere by fractionation and calculate a new set of primordial Solar System abundances.

  3. Ag2S deposited on oxidized polypropylene as composite material for solar light absorption

    NARCIS (Netherlands)

    Krylovaa, V.; Milbrat, A.; Embrachts, A.; Baltrusaitis, J.

    2014-01-01

    Thin film metal chalcogenides are superior solar light absorbers and can be combined into a functional material when deposited on polymeric substrates. Ag2S composite materials were synthesized on oxidized polypropylene using chemical bath deposition method and their properties were explored using X

  4. Sounding of the Atmosphere using Broadband Emission Radiometry observations of daytime mesospheric O2(1Δ) 1.27 μm emission and derivation of ozone, atomic oxygen, and solar and chemical energy deposition rates

    Science.gov (United States)

    Mlynczak, Martin G.; Marshall, B. Thomas; Martin-Torres, F. Javier; Russell, James M.; Thompson, R. Earl; Remsberg, Ellis E.; Gordley, Larry L.

    2007-08-01

    We report observations of the daytime O2(1Δ) airglow emission at 1.27 μm recorded by the Sounding of the Atmosphere using Broadband Emission Radiometry (SABER) instrument on the NASA Thermosphere-Ionosphere-Mesosphere Energetics and Dynamics (TIMED) satellite. The measured limb radiances are inverted to yield vertical profiles of the volume emission rate of energy from the O2 molecule. From these emission rates we subsequently derive the mesospheric ozone concentrations using a nonlocal thermodynamic equilibrium (non-LTE) radiative and kinetic model. Rates of energy deposition due to absorption of ultraviolet radiation in the Hartley band of ozone are also derived, independent of knowledge of the ozone abundance and solar irradiances. Atomic oxygen concentrations are obtained from the ozone abundance using photochemical steady state assumptions. Rates of energy deposition due to exothermic chemical reactions are also derived. The data products illustrated here are from a test day (4 July 2002) of SABER Version 1.07 data which are now becoming publicly available. This test day illustrates the high quality of the SABER O2(1Δ) airglow and ozone data and the variety of fundamental science questions to which they can be applied.

  5. Determination of electroless deposition by chemical nickeling

    Directory of Open Access Journals (Sweden)

    M. Badida

    2013-07-01

    Full Text Available Increasing of technical level and reliability of machine products in compliance with the economical and ecological terms belongs to the main trends of the industrial development. During the utilisation of these products there arise their each other contacts and the interaction with the environment. That is the reason for their surface degradation by wear effect, corrosion and other influences. The chemical nickel-plating allows autocatalytic deposition of nickel from water solutions in the form of coherent, technically very profitable coating without usage of external source of electric current. The research was aimed at evaluating the surface changes after chemical nickel-plating at various changes of technological parameters.

  6. Chemical Vapour Deposition of Large Area Graphene

    OpenAIRE

    Larsen, Martin Benjamin Barbour Spanget; Bøggild, Peter; Booth, Tim; Jørgensen, Anders Michael

    2015-01-01

    Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, ...

  7. Determination of electroless deposition by chemical nickeling

    OpenAIRE

    Badida, M.; M. Gombár; L. Sobotová; J. Kmec

    2013-01-01

    Increasing of technical level and reliability of machine products in compliance with the economical and ecological terms belongs to the main trends of the industrial development. During the utilisation of these products there arise their each other contacts and the interaction with the environment. That is the reason for their surface degradation by wear effect, corrosion and other influences. The chemical nickel-plating allows autocatalytic deposition of nickel from water solutions in the fo...

  8. Radiative transfer modeling of surface chemical deposits

    Science.gov (United States)

    Reichardt, Thomas A.; Kulp, Thomas J.

    2016-05-01

    Remote detection of a surface-bound chemical relies on the recognition of a pattern, or "signature," that is distinct from the background. Such signatures are a function of a chemical's fundamental optical properties, but also depend upon its specific morphology. Importantly, the same chemical can exhibit vastly different signatures depending on the size of particles composing the deposit. We present a parameterized model to account for such morphological effects on surface-deposited chemical signatures. This model leverages computational tools developed within the planetary and atmospheric science communities, beginning with T-matrix and ray-tracing approaches for evaluating the scattering and extinction properties of individual particles based on their size and shape, and the complex refractive index of the material itself. These individual-particle properties then serve as input to the Ambartsumian invariant imbedding solution for the reflectance of a particulate surface composed of these particles. The inputs to the model include parameters associated with a functionalized form of the particle size distribution (PSD) as well as parameters associated with the particle packing density and surface roughness. The model is numerically inverted via Sandia's Dakota package, optimizing agreement between modeled and measured reflectance spectra, which we demonstrate on data acquired on five size-selected silica powders over the 4-16 μm wavelength range. Agreements between modeled and measured reflectance spectra are assessed, while the optimized PSDs resulting from the spectral fitting are then compared to PSD data acquired from independent particle size measurements.

  9. Physical-chemical conditions of ore deposition

    Science.gov (United States)

    Barton, Paul B.

    Ore deposits form under a wide range of physical and chemical conditions, but those precipitating from hot, aqueous fluids-i.e. the hydrothermal deposits-form generally below 700°C and at pressures of only 1 or 2 kbar or less. Natural aqueous fluids in rocks may extract metal and sulfur from a variety of rock types or may acquire them as a residual heritage from a crystallizing silicate magma. Ore-forming hydrothermal fluids never appear as hot springs (except in deep, submarine situations) because they boil, mix with surface waters, and cool, thereby losing their ore-bearing ability before reaching the surface. Mineral systems function as chemical buffers and indicators just as buffers and indicators function in a chemical laboratory. By reading the record written in the buffer/indicator assemblages of minerals one can reconstruct many aspects of the former chemical environment. By studying the record of changing conditions one may deduce information regarding the processes functioning to create the succession of chemical environments and the ore deposits they represent. The example of the OH vein at Creede, Colorado, shows a pH buffered by the K-feldspar + muscovite + quartz assemblage and the covariation of S 2 and O 2 buffered by the assemblage chlorite + pyrite + quartz. Boiling of the ore fluid led to its oxidation to hematite-bearing assemblages and simultaneously produced an intensely altered, sericitic capping over the vein in response to the condensation of vapors bearing acidic components. The solubility of metals as calculated from experimental and theoretical studies of mineral solubility appears too low by at least one or two powers of ten to explain the mineralization at Creede. In contrast to Creede where the mineral stabilities all point to a relatively consistent chemistry, the Mississippi Valley type deposits present a puzzle of conflicting chemical clues that are impossible to reconcile with any single equilibrium situation. Thus we must

  10. Biocompatibility of chemical-vapour-deposited diamond.

    Science.gov (United States)

    Tang, L; Tsai, C; Gerberich, W W; Kruckeberg, L; Kania, D R

    1995-04-01

    The biocompatibility of chemical-vapour-deposited (CVD) diamond surfaces has been assessed. Our results indicate that CVD diamond is as biocompatible as titanium (Ti) and 316 stainless steel (SS). First, the amount of adsorbed and 'denatured' fibrinogen on CVD diamond was very close to that of Ti and SS. Second, both in vitro and in vivo there appears to be less cellular adhesion and activation on the surface of CVD diamond surfaces compared to Ti and SS. This evident biocompatibility, coupled with the corrosion resistance and notable mechanical integrity of CVD diamond, suggests that diamond-coated surfaces may be highly desirable in a number of biomedical applications. PMID:7654876

  11. Enhanced photovoltaic performance and time varied controllable growth of a CuS nanoplatelet structured thin film and its application as an efficient counter electrode for quantum dot-sensitized solar cells via a cost-effective chemical bath deposition.

    Science.gov (United States)

    Thulasi-Varma, Chebrolu Venkata; Rao, S Srinivasa; Kumar, Challa Shesha Sai Pavan; Gopi, Chandu V V M; Durga, I Kanaka; Kim, Soo-Kyoung; Punnoose, Dinah; Kim, Hee-Je

    2015-11-28

    For the first time we report a simple synthetic strategy to prepare copper sulfide counter electrodes on fluorine-doped tin oxide (FTO) substrates using the inexpensive chemical bath deposition method in the presence of hydrochloric acid (HCl) at different deposition times. CuS nanoplatelet structures were uniformly grown on the FTO substrate with a good dispersion and optimized conditions. The growth process of the CuS nanoplatelets can be controlled by changing the deposition time in the presence of HCl. HCl acts as a complexing agent as well as improving S(2-) concentration against S atoms in this one-step preparation. The photovoltaic performance was significantly improved in terms of the power conversion efficiency (PCE), short-circuit density (J(sc)), open-circuit voltage (V(oc)), and the fill factor (FF). The optimized deposition time of CuS 60 min resulted in a higher PCE of 4.06%, J(sc) of 12.92 mA cm(-2), V(oc) of 0.60 V, and a FF of 0.52 compared to CuS 50 min, CuS 70 min, and a Pt CE. The superior performance of the 60 min sample is due to the greater electrocatalytic activity and low charge transfer resistance at the interface of the CE and the polysulfide electrolyte. The concentration of Cu/S also had an important role in the formation of the CuS nanoplatelet structures. The optical bandgaps for the CuS with different morphologies were measured to be in the range of 1.98-2.28 eV. This improved photovoltaic performance is mainly attributed to the greater number of active reaction sites created by the CuS layer on the FTO substrate, which results large specific surface, superior electrical conductivity, low charge transfer resistance, and faster electron transport in the presence of HCl. Cyclic voltammetry, electrochemical impedance spectroscopy and Tafel-polarization measurements were used to investigate the electrocatalytic activity of the CuS and Pt CEs. This synthetic procedure not only provides high electrocatalytic activity for QDSSCs but could

  12. Enhanced photovoltaic performance and time varied controllable growth of a CuS nanoplatelet structured thin film and its application as an efficient counter electrode for quantum dot-sensitized solar cells via a cost-effective chemical bath deposition.

    Science.gov (United States)

    Thulasi-Varma, Chebrolu Venkata; Rao, S Srinivasa; Kumar, Challa Shesha Sai Pavan; Gopi, Chandu V V M; Durga, I Kanaka; Kim, Soo-Kyoung; Punnoose, Dinah; Kim, Hee-Je

    2015-11-28

    For the first time we report a simple synthetic strategy to prepare copper sulfide counter electrodes on fluorine-doped tin oxide (FTO) substrates using the inexpensive chemical bath deposition method in the presence of hydrochloric acid (HCl) at different deposition times. CuS nanoplatelet structures were uniformly grown on the FTO substrate with a good dispersion and optimized conditions. The growth process of the CuS nanoplatelets can be controlled by changing the deposition time in the presence of HCl. HCl acts as a complexing agent as well as improving S(2-) concentration against S atoms in this one-step preparation. The photovoltaic performance was significantly improved in terms of the power conversion efficiency (PCE), short-circuit density (J(sc)), open-circuit voltage (V(oc)), and the fill factor (FF). The optimized deposition time of CuS 60 min resulted in a higher PCE of 4.06%, J(sc) of 12.92 mA cm(-2), V(oc) of 0.60 V, and a FF of 0.52 compared to CuS 50 min, CuS 70 min, and a Pt CE. The superior performance of the 60 min sample is due to the greater electrocatalytic activity and low charge transfer resistance at the interface of the CE and the polysulfide electrolyte. The concentration of Cu/S also had an important role in the formation of the CuS nanoplatelet structures. The optical bandgaps for the CuS with different morphologies were measured to be in the range of 1.98-2.28 eV. This improved photovoltaic performance is mainly attributed to the greater number of active reaction sites created by the CuS layer on the FTO substrate, which results large specific surface, superior electrical conductivity, low charge transfer resistance, and faster electron transport in the presence of HCl. Cyclic voltammetry, electrochemical impedance spectroscopy and Tafel-polarization measurements were used to investigate the electrocatalytic activity of the CuS and Pt CEs. This synthetic procedure not only provides high electrocatalytic activity for QDSSCs but could

  13. In situ chemical vapor deposition growth of carbon nanotubes on hollow CoFe2O4 as an efficient and low cost counter electrode for dye-sensitized solar cells

    Science.gov (United States)

    Yuan, Hong; Jiao, Qingze; Zhang, Shenli; Zhao, Yun; Wu, Qin; Li, Hansheng

    2016-09-01

    The composites of hollow CoFe2O4 and carbon nanotubes (h-CoFe2O4@CNTs) are successfully prepared by using a simple hydrothermal process coupling with the in-situ chemical vapor deposition (CVD) as electrocatalytic materials for counter electrode of dye-sensitized solar cells. The CNTs are uniformly grown on the surface of hollow CoFe2O4 particles verified by X-ray powder diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) measurements. The electrochemical performances of hollow CoFe2O4@CNTs composites are evaluated by the EIS, Tafel polarization and CV measurements, and exhibiting high electrocatalytic performance for the reduction of triiodide. The presence of conductive polypyrrole nanoparticles could further improve the conductivity and catalytic performance of the resultant composites. Controlling the thickness of composites film, the optimum photovoltaic conversion efficiency of 6.55% is obtained, which is comparable to that of the cells fabricated with Pt counter electrode (6.61%). In addition, the composites exhibit a good long-term electrochemical stability in I3-/I- electrolyte.

  14. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  15. Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Lately, there has been a sharp increase in the publication of papers on chemical bath deposition of CdS thin films and related materials due to successful results obtained using this method to fabricate CdS thin-film buffer layers for CuInSe{sub 2}- and CdTe-based polycrystalline thin-film solar cells. Generally, these papers focus on previously proposed methods of studying film characteristics without a systematic study of the influence of deposition conditions on film characteristics. In this paper the authors present an exhaustive study of the chemical bath-deposited CdS thin films electro-optical properties dependence on deposition variables. The authors propose not only a set of conditions for obtaining CdS thin films by this method but additionally, suitable deposition process conditions for certain application requirements, such as buffer layers for thin-film solar cells. The observed electro-optical characteristics dependence on the deposition variables corroborates the chemical mechanism that they proposed previously for this process.

  16. Chemical Vapor Deposition Of Silicon Carbide

    Science.gov (United States)

    Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

    1993-01-01

    Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

  17. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    Energy Technology Data Exchange (ETDEWEB)

    Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London, WC1H 0AJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London, WC1H 0NN (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS (United Kingdom)

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research. - Graphical abstract: Schematic demonstration of the effect of thermochromic glazing on solar radiation (red arrow represents IR radiation, black arrow represents all other solar radiation). - Highlights: • Vanadium dioxide thin films for energy efficient glazing. • Reviews chemical vapour deposition techniques. • Latest results for thin film deposition for vanadium dioxide.

  18. Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

    Science.gov (United States)

    Rocheleau, Richard E.; Hegedus, Steven S.; Buchanan, Wayne A.; Jackson, Scott C.

    1987-07-01

    A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H2O, CO2, N2) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3×1015 eV-1 cm-3 and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.

  19. Studying chemical vapor deposition processes with theoretical chemistry

    OpenAIRE

    Pedersen, Henrik; Elliott, Simon D.

    2014-01-01

    In a chemical vapor deposition (CVD) process, a thin film of some material is deposited onto a surface via the chemical reactions of gaseous molecules that contain the atoms needed for the film material. These chemical reactions take place on the surface and in many cases also in the gas phase. To fully understand the chemistry in the process and thereby also have the best starting point for optimizing the process, theoretical chemical modeling is an invaluable tool for providing atomic-scale...

  20. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.

    1999-10-20

    This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

  1. Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

    NARCIS (Netherlands)

    A.D. Verkerk; M.M. de Jong; J.K. Rath; M. Brinza; R.E.I. Schropp; W.J. Goedheer; V.V. Krzhizhanovskaya; Y.E. Gorbachev; K.E. Orlov; E.M. Khilkevitch; A.S. Smirnov

    2008-01-01

    In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by l

  2. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-08-31

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  3. Variation in chemical wet deposition with meteorological conditions

    Science.gov (United States)

    Raynor, Gilbert S.; Hayes, Janet V.

    Analysis of hourly sequential precipitation samples collected at Brookhaven National Laboratory over a 4-y period shows systematic relationships between amounts of chemicals deposited in precipitation and meteorological conditions. Samples were taken by an automatic, sequential sampler and measured for pH, conductivity and the concentrations of major ions. Concurrent measurements and observations were made of the synoptic situation, precipitation type and rate, wind speed and direction, and temperature. Deposition per unit area was computed for subsets of the data classified by meteorological and time parameters. Results demonstrate that precipitation amount alone is not an adequate predictor of chemical wet deposition because of the variability of concentration in precipitation which is a complex function of emission rates and atmospheric processes. Results, however, document those conditions under which most material is deposited and those circumstances in which deposition occurs at the greatest rate. When classified by season, hydrogen and sulfate ion deposition are greatest in the summer when precipitation is lowest and least in the winter when precipitation is greatest. Nitrogen in both nitrate and ammonium has a similar but less extreme pattern. By synoptic type, all chemicals are deposited most heavily in warm front precipitation but the fraction of hydrogen and sulfate deposited in cold front and squall line hours is greater than the fraction of precipitation. All chemicals are deposited most heavily in steady rain when examined by precipitation type but thundershowers deposit chemicals of anthropogenic origin in amounts disproportionate to precipitation amounts. Results are also presented from data classified by other parameters.

  4. Scalable route to CH3NH3PbI3 perovskite thin films by aerosol assisted chemical vapour deposition

    OpenAIRE

    Bhachu, D. S.; Scanlon, D. O.; Saban, E. J.; Bronstein, H.; Parkin, I. P.; Carmalt, C. J.; Palgrave, R. G.

    2015-01-01

    Methyl-ammonium lead iodide is the archetypal perovskite solar cell material. Phase pure, compositionally uniform methyl-ammonium lead iodide thin films on large glass substrates were deposited using ambient pressure aerosol assisted chemical vapour deposition. This opens up a route to efficient scale up of hybrid perovskite film growth towards industrial deployment.

  5. Photo-electrochemical studies of chemically deposited nanocrystalline meso-porous n-type TiO2 thin films for dye-sensitized solar cell (DSSC) using simple synthesized azo dye

    Science.gov (United States)

    Ezema, C. G.; Nwanya, A. C.; Ezema, B. E.; Patil, B. H.; Bulakhe, R. N.; Ukoha, P. O.; Lokhande, C. D.; Maaza, Malik; Ezema, Fabian I.

    2016-04-01

    Nanocrystalline titanium dioxide (TiO2) thin films were deposited by successive ionic layer adsorption and reaction method onto fluorine doped tin oxide coated glass substrate at room temperature (300 K). Titanium trichloride and sodium hydroxide were used as cationic and anionic sources, respectively. The as-deposited and annealed films were characterized for structural, morphological, optical, electrical and wettability properties. The photoelectrochemical study of TiO2 sensitized with a laboratory synthesized organic dye (azo) was evaluated in the polyiodide electrolyte at 40 mW cm-2 light illumination intensity. The photovoltaic characteristics show a fill factor of 0.24 and solar conversion efficiency value of 0.032 % for a TiO2 thickness of 0.96 µm as compared to efficiency of 0.014 % for rose Bengal of the same thickness.

  6. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Gellings, P.J.; Vendel, van de D.; Metselaar, H.S.C.; Corbach, van H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical pro

  7. Chemical vapor deposition. 1975-1978 (citations from the NTIS Data Base). Report for 1975-78

    Energy Technology Data Exchange (ETDEWEB)

    Cavagnaro, D.M.

    1980-07-01

    This bibliography discusses chemical vapor deposition of carbon, carbides, ceramics, metals, and glasses. Applications of this process include coatings, semiconducting films, laser materials, solar cells, composite fabrication, and nuclear reactor material fabrication. The physical, mechanical, and chemical properties of these coatings are covered. (This updated bibliography contains 246 citations, none of which are new entries to the previous edition.)

  8. Chemical vapor deposition. 1979-June 1980 (citations from the NTIS Data Base). Report for 1979-June 1980

    Energy Technology Data Exchange (ETDEWEB)

    Cavagnaro, D.M.

    1980-07-01

    Research on chemical vapor deposition of carbon, carbides, ceramics, metals, and glasses are cited. Applications of this process include optical coatings, semiconducting films, laser materials, solar cells, composite fabrication, and nuclear reactor material fabrication. The physical, mechanical, and chemical properties of these coatings are covered. (This updated bibliography contains 64 citations, 50 of which are new entries to the previous edition.)

  9. Chemical vapor deposition of graphene single crystals.

    Science.gov (United States)

    Yan, Zheng; Peng, Zhiwei; Tour, James M

    2014-04-15

    As a two-dimensional (2D) sp(2)-bonded carbon allotrope, graphene has attracted enormous interest over the past decade due to its unique properties, such as ultrahigh electron mobility, uniform broadband optical absorption and high tensile strength. In the initial research, graphene was isolated from natural graphite, and limited to small sizes and low yields. Recently developed chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene for various applications. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next critical step of graphene growth relies on the synthesis of large graphene single crystals. In this Account, we first discuss graphene grain boundaries and their influence on graphene's properties. Mechanical and electrical behaviors of CVD-derived polycrystalline graphene are greatly reduced when compared to that of exfoliated graphene. We then review four representative pathways of pretreating Cu substrates to make millimeter-sized monolayer graphene grains: electrochemical polishing and high-pressure annealing of Cu substrate, adding of additional Cu enclosures, melting and resolidfying Cu substrates, and oxygen-rich Cu substrates. Due to these pretreatments, the nucleation site density on Cu substrates is greatly reduced, resulting in hexagonal-shaped graphene grains that show increased grain domain size and comparable electrical properties as to exfoliated graphene. Also, the properties of graphene can be engineered by its shape, thickness and spatial structure. Thus, we further discuss recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings. The fundamental growth mechanism and practical applications of these well-shaped graphene structures should be interesting topics and

  10. Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

    Science.gov (United States)

    Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

    2016-05-01

    HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure.

  11. Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

    Science.gov (United States)

    Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

    2016-05-01

    HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure. PMID:27483880

  12. Chemical vapour deposition of metal oxides and phosphides.

    OpenAIRE

    Binions, R.

    2006-01-01

    This thesis investigates the deposition of thin films of main group metal phosphide and main group metal oxide compounds on glass substrates by the use of dual source atmospheric pressure chemical vapour deposition. Binary phosphide systems with tin, germanium, silicon, antimony, copper or boron have been examined. Binary oxide systems of gallium, antimony, tin or niobium have also been investigated. Additionally these systems were deposited on gas sensor substrates and evaluated as metal oxi...

  13. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al2O3, we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al2O3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al2O3 film. • Ozone-based Al2O3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

  14. Kinematic Solar Dynamo with Spot Deposition

    Science.gov (United States)

    Karak, Bidya Binay; Miesch, Mark S.

    2016-05-01

    We have recently developed a kinematic dynamo model by including the observed differential rotation and the meridional flow. This model includes the emergence of sunspots from the deep-seated toroidal field and their subsequent decay at the surface, i.e., the Babcock-Leighton process for the generation of poloidal field.We shall show that this model reproduces most of the basic features of the solar magnetic cycle including the polarity reversals, 11 years periodicity, equatorward migration of sunspots at low latitudes and the poleward migration of the radial field at the surface. This model also produces the observed cycle variations when the fluctuations in the active-region tilt are included. North-south asymmetries of cycles from this model will also be demonstrated.

  15. Surface chemical studies of chemical vapour deposited diamond thin films

    International Nuclear Information System (INIS)

    Polycrystalime diamond grown by low pressure chemical vapour deposition (CVD) techniques has emerged in recent years as a new material with applications in such areas as optics, electronics, radiation detectors, chemical sensors and electrochemistry. A main aim of this thesis has been to advance current knowledge of the surface chemical properties of CVD diamond to underpin the development of our understanding of the properties and potential applications of this material. Cl2 is found to adsorb dissociatively on the clean, hydrogen-free diamond surface up to sub-monolayer coverage with a sticking probability of ∼1.2x10-3. Adsorption is a non-activated process, and the sticking probability and extent of coverage decreased with increasing temperature. This was shown to contrast with the behaviour found for the interaction of chlorine with the hydrogenated diamond surface where increased sticking probabilities and saturation surface coverages were observed, and where the reactivity also increased with temperature. Thermal desorption of atomic Cl occurred over a broad temperature range m both chemisorption systems, indicating the presence of more than one binding state. Atomic hydrogen was successful in efficiently etching the bound Cl from the surface. XeF2 was found to adsorb dissociatively onto the clean diamond surface to give up to monolayer coverages of F, which formed two distinct binding states. The first state, populated at low coverage, was predominantly covalent in character, while the second state, occurring at high surface coverages, had more ionic bonding character. Pre-hydrogenation of the diamond surface increased the reactive sticking probability observed, but decreased the extent of coverage by blocking reactive sites. The semi-ionic F was readily etched by atomic hydrogen, and underwent thermal desorption at temperatures as low as 300 deg C. The covalent form was more stable, being seemingly resistant to etching and persistent to high temperatures

  16. Chemical bath deposition of II-VI compound thin films

    Science.gov (United States)

    Oladeji, Isaiah Olatunde

    II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice. Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films. In this study, the zinc tetraammine complex ([Zn(NH3) 4]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH3)3]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film

  17. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    Science.gov (United States)

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-04-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

  18. Fabrication of Solar Cells by Deposition of Phosphorous Vapour

    International Nuclear Information System (INIS)

    This paper shows the fabrication of solar cells by deposition of phosphorous vapor using 10x10 cm2 polycrystalline silicon wafer. The diffusion process for forming p-n junction was carried out in the conveyor furnace at temperature of 860, 875, and 950 oC with belt velocities at 2, 3, 4, 5, 71/2 and 10 inches per minute (Ipm). The emphasize of the research is for understanding the characterization of the doping of phosphorous in order to obtain better performance of solar cells. At this initial research, it was found that solar cell efficiency is still around 7.5 - 8 % with short circuit current ISC in the range of 2.6 - 2.75 A. The current - voltage (I-V) measurement as well as the electrical parameters of solar cell are also discussed here. (author)

  19. High-Efficiency P-I-N Microcrystalline and Micromorph Thin Film Silicon Solar Cells Deposited on LPCVD Zno Coated Glass Substrates

    OpenAIRE

    Bailat, Julien; Dominé, Didier; Schlüchter, R.; Steinhauser, Jérôme; Faÿ, Sylvie; F Freitas; Bucher, C.; Feitknecht, Luc; Niquille, Xavier; Tscharner, T.; Shah, Arvind; Ballif, Christophe

    2008-01-01

    The authors report on the fabrication of microcrystalline silicon p-i-n solar cells with efficiencies close to 10%, using glass coated with zinc oxide (ZnO) deposited by low pressure chemical vapor deposition (LPCVD). LPCVD front contacts were optimized for p-i-n microcrystalline silicon solar cells by decreasing the free carrier absorption of the layers and increasing the surface roughness. These modifications resulted in an increased current density of the solar cell but also in significant...

  20. Light-induced chemical vapour deposition painting with titanium dioxide

    Science.gov (United States)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P.

    2003-03-01

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  1. Influence of Triethanolamine on the Chemical Bath Deposited NiS Thin Films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2011-01-01

    Full Text Available Problem statement: Recently, many scientists looking for new chalcogenide materials for the solar cell applications. Nowadays, silicon-based solar cell became dominant products in the market. Because of expensive silicon-based solar cells, scientists hope replaces it with cheaper chalcogenide materials. Approach: The binary chalcogenide materials were deposited onto microscope glass slide using simple chemical bath deposition method. Here, we study the influence of complexing agent in the preparation of thin films. The structural and morphological of the deposited films have been studied using X-ray diffraction and scanning electron microscopy, respectively. Results: The X-ray diffraction data showed that the films had polycrystalline in nature with hexagonal structure. The films deposited using 0.1 M of triethanolamine showed more NiS peaks and larger grain sizes as compared with 0.05M and 0.2 M triethanolamine based on the X-ray diffraction and scanning electron microscopy analysis, respectively. Conclusion: The complexing agent played important role during the deposition process.

  2. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  3. Water Condensation on Zinc Surfaces Treated by Chemical Bath Deposition

    OpenAIRE

    Narhe, R.D. (Ramchandra D.); González-Viñas, W.; Beysens, D.A. (Daniel A.)

    2010-01-01

    Water condensation, a complex and challenging process, is investigated on a metallic (Zn) surface, regularly used as anticorrosive surface. The Zn surface is coated with hydroxide zinc carbonate by chemical bath deposition, a very simple, low-cost and easily applicable process. As the deposition time increases, the surface roughness augments and the contact angle with water can be varied from 75º to 150º , corresponding to changing the surface properties from hydrophobic to ultrahydrophobic a...

  4. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    OpenAIRE

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-01-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality compar...

  5. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    OpenAIRE

    Sun, Jie; Sun, Yingchun

    2007-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system pH value played an important role in this experiment. The growth rate is 12 nm/h at room temperature. Post-growth annealing not only densifies and purifies the films, but results in film crystallization a...

  6. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  7. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  8. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik;

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...... of CVD processes; however very little information on the process and its characteristics can be found. This work presents the state of the art on the CVD of tantalum in long narrow channels and a reaction mechanism is suggested based on a rudimentary model. The effects of the system pressure, temperature...... and process-setup on the deposition rates and material distribution are also presented....

  9. Chemical vapor deposition (CVD) of uranium for alpha spectrometry

    International Nuclear Information System (INIS)

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  10. The effect of heteropolyacids and isopolyacids on the properties of chemically bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lejmi, N.; Savadogo, O. [Laboratoire d' Electrochimie et de Materiaux Energetiques, Ecole Polytechnique de Montreal, C.P. 6079, succ. Centre-ville, P.O. Box 6079, Qc, H3C 3A7 Montreal (Canada)

    2001-12-01

    The deposition of CdS films on ITO/glass substrates from a chemical bath containing cadmium acetate, ammonia, ammonium acetate and thiourea has been carried out with and without small amounts of heteropolyacids (HPA) (phosphotungstic acid (PTA): H{sub 3}[PW{sub 12}O{sub 40}], silicotungstic acid (STA): H{sub 4}[SiW{sub 12}O{sub 40}], phosphomolybdic acid (PMA): H{sub 3}[PMo{sub 12}O{sub 40}]) and isopolyacids (IPA) (tungstic acid (TA): H{sub 2}WO{sub 4} and molybdic acid (MA): H{sub 2}MoO{sub 4}) for different deposition times. The chemical, morphological, structural and optical properties of the films have been determined. The composition in sulphur and in cadmium of the films' surface and volume was determined for various HPA and IPA used in the deposition bath. The HPA and IPA which give the thickest film with the biggest grain size were deduced. The optical transmission at 400nm of CdS films deposited with STA at short time (20min) (50%) is higher than those of CdS deposited at longer time (6h) (7%). The optical transmission of CdS deposited with STA at short time is higher (50%) than that of CdS deposited without STA (20%). The performances of heterojunctions CdS/CdTe solar cells fabricated from CdS films deposited with and without STA and CdTe films deposited without STA have been determined. It was shown that the CdS/CdTe heterojunction solar cells fabricated from CdS films deposited with STA exhibited better photon collection efficiency and solar cell efficiency ({eta}=6%) than CdS/CdTe heterojunction solar cells fabricated from CdS films deposited without STA ({eta}=3.3%)

  11. Chemical signatures of planets: beyond solar-twins

    OpenAIRE

    Ramirez, I.; Melendez, J.; Asplund, M.

    2013-01-01

    Elemental abundance studies of solar twin stars suggest that the solar chemical composition contains signatures of the formation of terrestrial planets in the solar system, namely small but significant depletions of the refractory elements. To test this hypothesis, we study stars which, compared to solar twins, have less massive convective envelopes (therefore increasing the amplitude of the predicted effect) or are, arguably, more likely to host planets (thus increasing the frequency of sign...

  12. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef;

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi...... increased the barrier property of the modified low-density polyethylene, polyethylene terephthalate, and polylactide by 96.48%, 99.69%, and 99.25%, respectively....

  13. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  14. A novel induction heater for chemical vapor deposition

    Science.gov (United States)

    Ong, C. W.; Wong, H. K.; Sin, K. S.; Yip, S. T.; Chik, K. P.

    1989-06-01

    We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.

  15. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  16. Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials.

    Science.gov (United States)

    Stefik, Morgan

    2016-07-01

    The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting. PMID:27246652

  17. Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials.

    Science.gov (United States)

    Stefik, Morgan

    2016-07-01

    The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting.

  18. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  19. Deposition of diamond and boron nitride films by plasma chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Albella, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Gomez-Aleixandre, C. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Sanchez-Garrido, O. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Vazquez, L. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Martinez-Duart, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.

    1995-01-01

    The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters (i.e. gas mixture, substrate conditioning, plasma discharges etc.) which favour the formation of the cubic phase. Most of the work is devoted to diamond owing to the large progress attained in this material. In fact, the use of diamond as a hard protective coating is now on a commercial scale. By contrast, the preparation of c-BN layers with good characteristics still needs of further research. ((orig.))

  20. Fundamental studies of chemical vapor deposition diamond growth processes

    International Nuclear Information System (INIS)

    We are developing laser spectroscopic techniques to foster a fundamental understanding of diamond film growth by hot filament chemical vapor deposition (CVD). Several spectroscopic techniques are under investigation to identify intermediate species present in the bulk reactor volume, the thin active volume immediately above the growing film, and the actual growing surface. Such a comprehensive examination of the overall deposition process is necessary because a combination of gas phase and surface chemistry is probably operating. Resonantly enhanced multiphoton ionization (REMPI) techniques have been emphasized. A growth rector that permits through-the-substrate gas sampling for REMPI/time-of-flight mass spectroscopy has been developed. 7 refs., 2 figs

  1. Combustion chemical vapor deposited coatings for thermal barrier coating systems

    Energy Technology Data Exchange (ETDEWEB)

    Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering

    1995-12-31

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

  2. The power source effect on SiOx coating deposition by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    SiOx coatings were prepared by capacitively coupled plasma enhanced chemical vapor deposition on polyethyleneterephtalate substrates in 23 kHz middle-frequency and radio frequency power supplies, respectively, where hexamethyldisiloxane was used as gas source. The influences of discharge conditions on gas phase intermediate species and active radicals for SiOx formation was investigated by mass spectrometry as real-time in-situ diagnosis. The deposited SiOx coating chemical structures were also analyzed by Fourier transform infrared spectroscopy. Meanwhile, the film barrier property, oxygen transmission rate, was measured at 23 oC and 50% humidity circumstance. The better barrier property was obtained in the MF power source depositing SiOx coated PET.

  3. Atomic layer deposition grown MOx thin films for solar water splitting: Prospects and challenges

    International Nuclear Information System (INIS)

    The magnitude of energy challenge not only calls for efficient devices but also for abundant, inexpensive, and stable photoactive materials that can enable efficient light harvesting, charge separation and collection, as well as chemical transformations. Photoelectrochemical systems based on semiconductor materials have the possibility to transform solar energy directly into chemical energy the so-called “solar hydrogen.” The current challenge lies in the harvesting of a larger fraction of electromagnetic spectrum by enhancing the absorbance of electrode materials. In this context, atomically precise thin films of metal oxide semiconductors and their multilayered junctions are promising candidates to integrate high surface areas with well-defined electrode–substrate interface. Given its self-limited growth mechanism, the atomic layer deposition (ALD) technique offers a wide range of capabilities to deposit and modify materials at the nanoscale. In addition, it opens new frontiers for developing precursor chemistry that is inevitable to design new processes. Herein, the authors review the properties and potential of metal oxide thin films deposited by ALD for their application in photoelectrochemical water splitting application. The first part of the review covers the basics of ALD processes followed by a brief discussion on the electrochemistry of water splitting reaction. The second part focuses on different MOx films deposited by atomic layer deposition for water splitting applications; in this section, The authors discuss the most explored MOx semiconductors, namely, Fe2O3, TiO2, WO3, and ZnO, as active materials and refer to their application as protective coatings, conductive scaffolds, or in heterojunctions. The third part deals with the current challenges and future prospects of ALD processed MOx thin films for water splitting reactions

  4. Research and Development Aspects on Chemical Preparation Techniques of Photoanodes for Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Nilofar Asim

    2014-01-01

    Full Text Available The importance of dye sensitized solar cells (DSSCs as a low-cost and environmentally friendly photovoltaic (PV technology has prompted many researchers to improve its efficiency and durability. The realization of these goals is impossible without taking into account the importance of the materials in DSSCs, so the focus on the preparation/deposition methods is essential. These methods can be either chemical or physical. In this study, the chemical applied methods that utilize chemical reaction to synthesize and deposit the materials are covered and categorized according to their gas phase and liquid phase precursors. Film processing techniques that can be used to enhance the materials' properties postpreparation are also included for further evaluation in this study. However, there is a variety of consideration, and certain criteria must be taken into account when selecting a specific deposition method, due to the fact that the fabrication conditions vary and are unoptimized.

  5. The versatility of hot-filament activated chemical vapor deposition

    International Nuclear Information System (INIS)

    In the field of activated chemical vapor deposition (CVD) of polycrystalline diamond films, hot-filament activation (HF-CVD) is widely used for applications where large deposition areas are needed or three-dimensional substrates have to be coated. We have developed processes for the deposition of conductive, boron-doped diamond films as well as for tribological crystalline diamond coatings on deposition areas up to 50 cm x 100 cm. Such multi-filament processes are used to produce diamond electrodes for advanced electrochemical processes or large batches of diamond-coated tools and parts, respectively. These processes demonstrate the high degree of uniformity and reproducibility of hot-filament CVD. The usability of hot-filament CVD for diamond deposition on three-dimensional substrates is well known for CVD diamond shaft tools. We also develop interior diamond coatings for drawing dies, nozzles, and thread guides. Hot-filament CVD also enables the deposition of diamond film modifications with tailored properties. In order to adjust the surface topography to specific applications, we apply processes for smooth, fine-grained or textured diamond films for cutting tools and tribological applications. Rough diamond is employed for grinding applications. Multilayers of fine-grained and coarse-grained diamond have been developed, showing increased shock resistance due to reduced crack propagation. Hot-filament CVD is also used for in situ deposition of carbide coatings and diamond-carbide composites, and the deposition of non-diamond, silicon-based films. These coatings are suitable as diffusion barriers and are also applied for adhesion and stress engineering and for semiconductor applications, respectively

  6. Coating of metals with titanium diboride by chemical vapor deposition

    International Nuclear Information System (INIS)

    This study is an experimental investigation of the chemical vapor deposition of titanium diboride on metallic substrates by the hydrogen reduction of TiCl4 and BCl3 at temperatures between 8500C and 11000C. Kovar, tantalum, and several stainless steels were found to be suitable substrates since they could withstand the deposition temperature, had adequate resistance to HCl, a by-product of the deposition reaction, and had thermal expansion coefficients sufficiently close to that of TiB2 (less than or equal to10 x 10-6/0C). The TiB2 coatings produced were 68.2% Ti and thus near stoichiometry and had very low impurity content. They had Knoop hardnesses averaging 3300 kg/mm2 and exhibited extraordinary erosion resistance

  7. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    Institute of Scientific and Technical Information of China (English)

    SUN,Jie(孙捷); SUN,Ying-Chun(孙迎春)

    2004-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al2(SO4)3]=0.0837 mol·L-1, [NaHCO3]=0.214 mol·L-1, 15 ℃. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well, Excellent quality of A12O3 films in this work is supported by electron dispersion spectroscopy,Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

  8. Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in

  9. Self-organization and nanostructure formation in chemical vapor deposition

    Science.gov (United States)

    Walgraef, Daniel

    2013-10-01

    When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monatomic layers, such models describe the evolution of atomic coverage due to the combined effect of reaction terms representing adsorption-desorption and chemical processes and nonlinear diffusion terms that are of the Cahn-Hilliard type. This combination may lead, below a critical temperature, to the instability of uniform deposited layers. This instability triggers the formation of nanostructures corresponding to regular spatial variations of substrate coverage. Patterns wavelengths and symmetries are selected by dynamical variables and not by variational arguments. According to the balance between reaction- and diffusion-induced nonlinearities, a succession of nanostructures including hexagonal arrays of dots, stripes, and localized structures of various types may be obtained. These structures may initiate different growth mechanisms, including Volmer-Weber and Frank-Van der Merwe types of growth. The relevance of this approach to the study of deposited layers of different species is discussed.

  10. Carbon nanostructures and networks produced by chemical vapor deposition

    OpenAIRE

    Kowlgi, N.K.K.; Koper, G.J.M.; Raalten, R.A.D.

    2012-01-01

    The invention pertains to a method for manufacturing crystalline carbon nanostructures and/or a network of crystalline carbon nanostructures, comprising: (i) providing a bicontinuous micro-emulsion containing metal nanoparticles having an average particle size between 1and 100nm; (ii) bringing said bicontinuous micro-emulsion into contact with a substrate; and (iii) subjecting said metal nanoparticles and a gaseous carbon source to chemical vapor deposition, thus forming carbon nanostructures...

  11. Chemical vapour deposition synthetic diamond: materials, technology and applications

    OpenAIRE

    Balmer, R. S.; Brandon, J R; Clewes, S L; Dhillon, H. K.; Dodson, J M; Friel, I.; Inglis, P. N.; Madgwick, T D; Markham, M. L.; Mollart, T P; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A J; Wilman, J J

    2009-01-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synt...

  12. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    OpenAIRE

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-01-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comp...

  13. Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride

    OpenAIRE

    Besling, W.; van der Put, P.; Schoonman, J.

    1995-01-01

    Laser-induced Chemical Vapour Deposition of silicon carbonitride coatings and powders has been investigated using hexamethyldisilazane (HMDS) and ammonia as reactants. An industrial CW CO2-laser in parallel configuration has been used to heat up the reactant gases. HMDS dissociates in the laser beam and reactive radicals are formed which increase rapidly in molecular weight by an addition mechanism. Dense polymer-like silicon carbonitride thin films and nanosized powders are formed depending ...

  14. Chemical surface deposition of cds thin films from CdI2 aqueous solution

    Directory of Open Access Journals (Sweden)

    G. Il’chuk

    2009-01-01

    Full Text Available For the first time using CdI2 solution CdS films on glass and ITO coated glass substrates were produced by the method of layerwise chemical surface deposition (ChSD. CdS thin films with the widths from 40 nm to 100 nm were obtained for windows in solar cells based on CdS/CdTe heterojunctions. Changes of the structural and optical properties of CdS films due to air annealing are shown.

  15. High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases,the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good,and the underlying SiGe/Si heterointerface is sharply defined.

  16. A new modular multichamber plasma enhanced chemical vapor deposition system

    Science.gov (United States)

    Madan, A.; Rava, P.; Schropp, R. E. I.; von Roedern, B.

    1993-06-01

    The present work reports on a new modular UHV multichamber PECVD system with characteristics which prevent both the incorporation of residual impurities and cross contamination between different layers. A wide range of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) materials have been produced and single junction pin solar cells with an efficiency greater than 10% have been readily obtained with little optimization. The system contains three UHV modular process zones (MPZ's); the MPZ's and a load lock chamber are located around a central isolation and transfer zone which contains the transport mechanism consisting of an arm with radial and linear movement. This configuration allows for introduction of the substrate into the MPZ's in any sequence so that any type of multilayer device can be produced. The interelectrode distance in the MPZ's can be adjusted between 1 and 5 cm. This has been found to be an important parameter in the optimisation of the deposition rate and of the uniformity. The multichamber concept also allows individually optimized deposition temperatures and interelectrode distances for the various layers. The system installed in Utrecht will be employed for further optimization of single junction solar cells and for research and development of stable a-Si:H tandem cells.

  17. Chemical reactions driven by concentrated solar energy

    Science.gov (United States)

    Levy, Moshe

    Solar energy can be used for driving endothermic reactions, either photochemically or thermally. The fraction of the solar spectrum that can be photochemically active is quite small. Therefore, it is desirable to be able to combine photochemical and thermal processes in order to increase the overall efficiency. Two thermally driven reactions are being studied: oil shale gasification and methane reforming. In both cases, the major part of the work was done in opaque metal reactors where photochemical reactions cannot take place. We then proceeded working in transparent quartz reactors. The results are preliminary, but they seem to indicate that there may be some photochemical enhancement. The experimental solar facilities used for this work include the 30 kW Schaeffer Solar Furnace and the 3 MW Solar Central Receiver in operation at the Weizmann Institute. The furnace consists of a 96 sq. m flat heliostat, that follows the sun by computer control. It reflects the solar radiation onto a spherical concentrator, 7.3 m in diameter, with a rim angle of 65 degrees. The furnace was characterized by radiometric and calorimetric measurements to show a solar concentration ratio of over 10,000 suns. The central receiver consists of 64 concave heliostats, 54 sq. m each, arranged in a north field and facing a 52 m high tower. The tower has five target levels that can be used simultaneously. The experiments with the shale gasification were carried out at the lowest level, 20 m above ground, which has the lowest solar efficiency and is assigned for low power experiments. We used secondary concentrators to boost the solar flux.

  18. Chemical bath deposition of CdS thin films: An approach to the chemical mechanism through study of the film microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Many papers have been published lately on chemical bath deposition of CdS (CBD-CdS) thin films and related materials due to the promising results obtained using CBD-CdS for the fabrication of thin-film solar cells. In spite of this little of the research proposes a realistic chemical mechanism for the deposition process based on the determination of kinetic parameters. In this paper the authors present an exhaustive study of the CBD-CdS kinetic from which they propose a new chemical mechanism which agrees with the kinetic parameters determined supported by heterogeneous catalysis concepts. Simultaneously, the dependence of the deposited film structure on the kinetic variables is studied and the results obtained corroborate the proposed mechanism. These studies have allowed the authors to establish a standard set of conditions for the fabrication of homogeneous and continuous very thin CdS films.

  19. Deposition pressure effects on material structure and performance of micromorph tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Delli Veneri, Paola; Mercaldo, Lucia V.; Privato, Carlo [Enea, Portici Research Center, Localita Granatello, 80055 Portici, Napoli (Italy)

    2008-01-15

    Tandem solar cells represent an elegant way of overcoming the efficiency limits of single-junction solar cells and reducing the light-induced degradation of amorphous silicon films. Stacked structures consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell allow a good utilization of the solar spectrum due to the band gap values of the two materials. These devices, firstly introduced by the IMT research group, were designated as ''micromorph'' tandem solar cells. To better exploit this concept, it is important to tune parameters like the band gaps and the short-circuit currents. In this work, we have realized micromorph tandem solar cells on Asahi U-type TCO-covered glass substrates. The intrinsic layer of both the amorphous top cell and the microcrystalline bottom cell is grown by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at 100 MHz at low substrate temperature (150{sup o}C). Finally, a ZnO reflector and a metal contact complete the structure. No intermediate optical mirror between the two cells is used at this stage. Undiluted a-Si:H, with reduced band gap when compared to H{sub 2}-diluted amorphous silicon, is used as absorber layer in the top cell. As for the bottom cell, the high-pressure-high-power regime (up to 267 Pa-80 W) has been explored aiming at growing high-quality microcrystalline silicon at large deposition rates. The effect of the structural composition of the microcrystalline absorber layer on the current-voltage characteristic and spectral response of tandem devices has been investigated. An efficiency of 11.3% has been obtained with short-circuit current densities around 13 mA/cm{sup 2}, open-circuit voltages {proportional_to}1.34 V and fill factors {proportional_to}66%. (author)

  20. Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD)

    Institute of Scientific and Technical Information of China (English)

    MA Yu-tian; GONG Zhu-Qing; XU Wei-Hong; HUANG Jian

    2006-01-01

    Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron microscopy, FTIR transmission,UV/VIS/NIR transmission and reflectance. The results show that the films structural and optical properties are influenced by many factors such as film thickness, crystallite size and substrate temperature. The films as thick as 111-133 nm have high IR transmission across the full 8-13 μm band and highly blocking in the solar spectral region elsewhere, which indicates that Te films thickness in this region can be used as good solar radiation shields in radiative cooling devices.

  1. Characterization of nanocarbon deposited on insulator substrate by alcohol chemical vapor deposition

    Science.gov (United States)

    Tsujimoto, Marina; Murata, Hidenobu; Tachibana, Masaru

    2016-10-01

    Single-layer-graphene-like nanocarbon materials were directly deposited on c-plane sapphire substrates by thermal chemical vapor deposition with ethanol as a carbon source. Scanning electron microscopy (SEM) images show that the deposited materials have sheetlike grains of around 100 nm diameter. Most of them have “hills” with 32 nm diameter on the grains. According to atomic force microscopy (AFM) observation, the height of the sheetlike grains is below 1 nm, which is comparable to that of single-layer graphene, while the hills have a height of several nm. Raman spectra show that the material is similar to graphitic nanocarbon, which has a strong D band. This result implies that there are a number of defects in the nanocarbon materials.

  2. Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition

    CERN Document Server

    Kang, S Y; Lee, S K; Hwang, C S; Kim, H J

    2000-01-01

    Ru thin films were deposited at 300 approx 400 .deg. C by using Ru(C sub 5 H sub 4 C sub 2 H sub 5) sub 2 (Ru(EtCp) sub 2) as a precursor and low-pressure metalorganic chemical vapor deposition. The addition of O sub 2 gas was essential to form Ru thin films. The deposition rates of the films were about 200 A/min. For low oxygen addition and high substrate temperature, RuO sub 2 phases were formed. Also, thermodynamic calculations showed that all the supplied oxygen was consumed to oxidize carbon and hydrogen, cracked from the precursor ligand, rather than Ru. Thus, metal films could be obtained There was an optimum oxygen to precursor ratio at which the pure Ru phase could be obtained with minimum generation of carbon and RuO sub 2

  3. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  4. Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer

    Energy Technology Data Exchange (ETDEWEB)

    Sobajima, Yasushi; Nishino, Mitsutoshi; Fukumori, Taiga; Kurihara, Masanori; Higuchi, Takuya; Nakano, Shinya; Toyama, Toshihiko; Okamoto, Hiroaki [Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Machikaneyama-cho 1-3, Osaka 560-8531 (Japan)

    2009-06-15

    Microcrystalline silicon ({mu}c-Si) films deposited at high growth rates up to 8.1 nm/s prepared by very-high-frequency-plasma-enhanced chemical vapor deposition (VHF-PECVD) at 18-24 Torr have been investigated. The relation between the deposition rates and input power revealed the depletion of silane. Under high-pressure deposition (HPD) conditions, the structural properties were improved. Furthermore, applying {mu}c-Si to n-i-p solar cells, short-circuit current density (J{sub SC}) was increased in accordance with the improvement of microstructure of i-layer. As a result, a conversion efficiency of 6.30% has been achieved employing the i-layer deposited at 8.1 nm/s under the HPD conditions. (author)

  5. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  6. Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

    KAUST Repository

    Alsaggaf, Ahmed

    2015-07-01

    The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive

  7. Novel deposition method of anti-reflective coating for spherical silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro [Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga, 525-8577 (Japan); Murozono, Mikio (Clean Venture 21 co.); Yamaguchi, Yukio (The University of Tokyo)

    2006-11-23

    The liquid-phase deposition (LPD) as a novel deposition method of anti-reflective coating (ARC) for spherical silicon solar cells has been proposed. The LPD is a growth method in aqueous solution and can deposit thin films with uniform coverage over a spherical surface. The solar cell performance of the spherical silicon solar cell with an ARC shows more than 10% increase in short-circuit current density compared to that without an ARC. The result confirms that the LPD method is useful for ARC fabrications of spherical silicon solar cells. (author)

  8. Characterisation of TiO 2 deposited by photo-induced chemical vapour deposition

    Science.gov (United States)

    Kaliwoh, Never; Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We report the deposition of thin TiO 2 films on crystalline Si and quartz by photo-induced chemical vapour deposition (CVD) using UV excimer lamps employing a dielectric barrier discharge in krypton chloride (KrCl ∗) to provide intense narrow band radiation at λ=222 nm. The precursor used was titanium isopropoxide (TTIP). Films from around 20-510 nm in thickness with refractive indices from 2.20 to 2.54 were grown at temperatures between 50 and 350 °C. The higher refractive index values compare favourably with the value of 2.58 recorded for the bulk material. The measured deposition rate was around 50 nm/min at 350 °C. Fourier transform infrared spectroscopy (FTIR) revealed the presence of TiO 2 through the observation of a Ti-O absorption peak and the absence of OH in films deposited at 250-350 °C indicated relatively good quality films. The phase of films deposited at 200-350 °C was anatase as determined by X-ray diffraction.

  9. Synthesis of Aligned Carbon Nanotubes by Thermal Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Gang; ZHOU Ming; MA Weiwei; CAI Lan

    2009-01-01

    Single crystal silicon was found to be very beneficial to the growth of aligned carbon nanotubes by chemical vapor deposition with C2H2 as carbon source. A thin film of Ni served as catalyst was deposited on the Si substrate by the K575X Peltier Cooled High Resolution Sputter Coater before growth. The growth properties of carbon nanotubes were studied as a function of the Ni catalyst layer thickness. The diameter, growth rate and areal density of the carbon nanotubes were controlled by the initial thickness of the catalyst layer. Steric hindrance between nanotubes forces them to grow in well-aligned manner at an initial stage of growth. Transmission electron microscope analysis revealed that nanotubes grew by a tip growth mechanism.

  10. Coloration efficiency of chemically deposited electrochromic thin films

    International Nuclear Information System (INIS)

    Transparent nickel oxide and copper oxide thin films were produced by very simple and economic method of chemical deposition. Those films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates. Electrochromic test device (ECTD) was constructed by using these films as working electrodes, together with the FTO as a counter electrode in alkaline environment (0,1 M NaOH aqueous solution). All the obtained films exhibited electrochromic behavior. Nichel oxide films were transparent for visible light in the reduced state, and displayed a dark brown color in the oxidised state and displayed a very dark brown color in the reduced state. The coloration efficiency (CE) at wavelength λ=670 nm was estimated from the slope of the graphical presentation of the optical density as a function of the charge density, during the charge extraction (nickel oxide films) and charge insertion (copper oxide films). (Author)

  11. Electrospray deposition of isolated chemically synthesized magnetic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Agostini, Pierre; Meffre, Anca; Lacroix, Lise-Marie; Ugnati, Damien [Université de Toulouse (France); INSA, UPS, CNRS, Laboratoire de Physique et Chimie des Nano-objets (LPCNO) (France); Ondarçuhu, Thierry [Centre d’Elaboration de Matériaux et d’Etudes Structurales (CEMES-CNRS) (France); Respaud, Marc; Lassagne, Benjamin, E-mail: lassagne@insa-toulouse.fr [Université de Toulouse (France); INSA, UPS, CNRS, Laboratoire de Physique et Chimie des Nano-objets (LPCNO) (France)

    2016-01-15

    The deposition of isolated magnetic nanoparticles onto a substrate was performed using electrohydrodynamic spraying. Two kinds of nanoparticles were sprayed, 11 nm CoFe carbide nanospheres and 10.5 nm Fe nanocubes. By studying carefully the evolution of the sprayed charged droplets and the mechanism of nanoparticle dispersion in them, we could optimize the nanoparticle concentration within the initial nanoparticle solution (i) to reduce the magnetic interaction and therefore prevent agglomeration and (ii) to obtain in a relatively short period (1 h) a deposit of isolated magnetic nanoparticles with a density of up to 400 nanoparticles per µm{sup 2}. These results open great perspectives for magnetic measurements on single objects using advanced magnetometry techniques as long as spintronics applications based on single chemically synthesized magnetic nanoparticles.

  12. Bath parameter dependence of chemically deposited Copper Selenide thin film

    International Nuclear Information System (INIS)

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation Of Cu2-xSe thin films on to glass substrate. Different thin fms (0.2-0.6/μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that completing the Cu2+ ions with EA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu2-xSe. (author)

  13. Chemical Vapour Deposition of Gas Sensitive Metal Oxides

    Directory of Open Access Journals (Sweden)

    Stella Vallejos

    2016-03-01

    Full Text Available This article presents a review of recent research efforts and developments for the fabrication of metal-oxide gas sensors using chemical vapour deposition (CVD, presenting its potential advantages as a materials synthesis technique for gas sensors along with a discussion of their sensing performance. Thin films typically have poorer gas sensing performance compared to traditional screen printed equivalents, attributed to reduced porosity, but the ability to integrate materials directly with the sensor platform provides important process benefits compared to competing synthetic techniques. We conclude that these advantages are likely to drive increased interest in the use of CVD for gas sensor materials over the next decade, whilst the ability to manipulate deposition conditions to alter microstructure can help mitigate the potentially reduced performance in thin films, hence the current prospects for use of CVD in this field look excellent.

  14. Synthesis of mullite coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  15. Handbook of chemical vapor deposition principles, technology and applications

    CERN Document Server

    Pierson, Hugh O

    1999-01-01

    Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

  16. Microwave transmission properties of chemical vapor deposition graphene

    Science.gov (United States)

    Wu, Yunqiu; Xu, Yuehang; Wang, Zegao; Xu, Cao; Tang, Zongxi; Chen, Yuanfu; Xu, Ruimin

    2012-07-01

    In this letter, the microwave transmission properties of graphene grown by the chemical vapor deposition are studied by using a multiple-layer coplanar-waveguide transmission-line based measurement method. Remarkable energy loss and phase shift have been observed in graphene from the measured scattering parameters through vector network analyzer. The effective permittivity is deduced by partial-capacitance technique, and the complex permittivity of graphene are extracted in the frequency range of 500 MHz to 6 GHz. Different from conventional dielectric material, the permittivity of graphene shows frequency-dependent below 4 GHz and has an magnitude larger than 104 for both real and imaginary parts.

  17. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    International Nuclear Information System (INIS)

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used

  18. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  19. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    Science.gov (United States)

    Bignardi, Luca; van Dorp, Willem F.; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-09-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer.

  20. Microscopic characterisation of suspended graphene grown by chemical vapour deposition.

    Science.gov (United States)

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; De Hosson, Jeff Th M; Stöhr, Meike; Rudolf, Petra

    2013-10-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer. PMID:23945527

  1. Ballistic transport in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene

  2. Analysis of post deposition processing for CdTe/CdS thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    McCandless, B.E.; Birkmire, R.W. (Inst. of Energy Conversion, Univ. of Delaware, Newark, DE (United States))

    1991-12-01

    A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400degC heat treatment with CdCl{sub 2} restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdS{sub x}Te{sub 1-x} layer with a narrower band gap than CdTe. Bifacial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage (V{sub oc}) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods. (orig.).

  3. Deposition and characterization of (Zn,Mg)O buffer layers on CIGSSe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hussmann, Benjamin; Erfurth, Felix; Schoell, Achim [Universitaet Wuerzburg (Germany). Experimentelle Physik II; Niesen, Thomas; Palm, Joerg [Avancis GmbH, Muenchen (Germany); Grimm, Alexander [Hahn-Meitner-Institut Berlin (Germany); Umbach, Eberhard [Universitaet Wuerzburg (Germany). Experimentelle Physik II; Forschungszentrum Karlsruhe (Germany)

    2008-07-01

    (Zn, Mg)O buffer layers on Cu(In,Ga)(S,Se){sub 2}(CIGSSe) thin film solar cells are promising alternatives to CdS buffer layers by featuring comparable efficiencies, better environmental compatibility and the possibility to implement the deposition process into a vacuum processing line. The (Zn,Mg)O buffer layers are deposited by radio frequency magnetron co-sputtering from two separate ZnO and MgO ceramic sputter targets to control the Mg-content and therefore the band gap of the buffer layer. In our experimental setup the sputter preparation chamber is connected with a UHV analysis system which allows in-situ characterization with X-ray photoelectron spectroscopy (XPS). The interface between the absorber and the buffer layer is believed to have a major influence on the cell efficiency and is thus of particular interest in this work. This interface has been investigated during layer deposition by sequentially interrupting the sputter process and performing XPS scans. We observed island growth of (Zn,Mg)O on CIGSSe and a strong oxidation of the absorber surface induced by the deposit. In order to complement the chemical and electronic information with structural data, energy dispersive X-ray analysis, X-ray diffraction, and scanning electron microscopy have been applied.

  4. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

  5. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki

    use as a construction material for process equipment, with the cheaper alternative being the construction of equipment from steel and then protecting it with a thin but efficacious layer of tantalum. Chemical Vapour Deposition (CVD) is chosen as the most effective process to apply thin corrosion......Tantalum’s resistance to corrosion in hot acidic environments and its superior metallic properties have made it a prime solution as a construction material or protective coating to equipment intended for use in such harsh chemical and physical conditions. The high price of tantalum metal limits its...... protective layers of tantalum because of the process’ ability to coat complex geometries and its relative ease to control. This work focuses on studying the CVD of tantalum in long narrow channels with the view that the knowledge gained during the project can be used to optimise the commercial coating...

  6. Structural, electrical and optical properties of copper selenide thin films deposited by chemical bath deposition technique

    International Nuclear Information System (INIS)

    A low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films on glass substrates. Structural, electrical and optical properties of these films were investigated. X-ray diffraction (XRD) study of the Cu2-xSe films annealed at 523K suggests a cubic structure with a lattice constant of 5.697A. Chemical composition was investigated by X-ray photoelectron spectroscopy (XPS). It reveals that absorbed oxygen in the film decreases remarkably on annealing above 423K. The Cu/Se ratio was observed to be the same in as-deposited and annealed films. Both as- deposited and annealed films show very low resistivity in the range of (0.04- 0.15) x 10-5 Ω-m. Transmittance and Reflectance were found in the range of 5-50% and 2-20% respectively. Optical absorption of the films results from free carrier absorption in the near infrared region with absorption coefficient of ∼108 m-1. The band gap for direct transition, Eg.dir varies in the range of 2.0-2.3eV and that for indirect transition Eg.indir is in the range of 1.25-1.5eV.1. (author)

  7. Chemical vapor deposition of conformal, functional, and responsive polymer films.

    Science.gov (United States)

    Alf, Mahriah E; Asatekin, Ayse; Barr, Miles C; Baxamusa, Salmaan H; Chelawat, Hitesh; Ozaydin-Ince, Gozde; Petruczok, Christy D; Sreenivasan, Ramaswamy; Tenhaeff, Wyatt E; Trujillo, Nathan J; Vaddiraju, Sreeram; Xu, Jingjing; Gleason, Karen K

    2010-05-11

    Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed. PMID:20544886

  8. Neutron detectors made from chemically vapor deposited semiconductors

    International Nuclear Information System (INIS)

    In this paper, the authors present the results of investigations on the use of semiconductors deposited by chemical vapor deposition (CVD) for the fabrication of neutron detectors. For this purpose, 20 microm thick hydrogenated amorphous silicon (a-Si:H) pin diodes and 100 microm thick polycrystalline diamond resistive detectors were fabricated. The detectors were coupled to a neutron-charged particle converter: a layer of either gadolinium or boron (isotope 10 enriched) deposited by evaporation. They have demonstrated the capability of such neutron detectors to operate at neutron fluxes ranging from 101 to 106 neutrons/cm2.s. The fabrication of large area detectors for neutron counting or cartography through the use of multichannel reading circuits is discussed. The advantages of these detectors include the ability to produce large area detectors at low cost, radiation hardness (∼ 4 Mrad for a-Si:H and ∼ 100 Mrad for diamond), and for diamond, operation at temperatures up to 500 C. These properties enable the use of these devices for neutron detection in harsh environments. Thermal neutron detection efficiency up to 22% and 3% are expected by coupling a-Si:H diodes and diamond detectors to 3 microm thick gadolinium (isotope 157) and 2 microm thick boron layers, respectively

  9. Effects of Thermal Annealing on the Optical Properties of Titanium Oxide Thin Films Prepared by Chemical Bath Deposition Technique

    Directory of Open Access Journals (Sweden)

    H.U. Igwe

    2010-08-01

    Full Text Available A titanium oxide thin film was prepared by chemical bath deposition technique, deposited on glass substrates using TiO2 and NaOH solution with triethanolamine (TEA as the complexing agent. The films w ere subjected to post deposition annealing under various temperatures, 100, 150, 200, 300 and 399ºC. The thermal treatment streamlined the properties of the oxide films. The films are transparent in the entire regions of the electromagnetic spectrum, firmly adhered to the substrate and resistant to chemicals. The transmittance is between 20 and 95% while the reflectance is between 0.95 and 1%. The band gaps obtained under various thermal treatments are between 2.50 and 3.0 ev. The refractive index is between 1.52 and 2.55. The thickness achieved is in the range of 0.12-0.14 :m.These properties of the oxide film make it suitable for application in solar cells: Liquid and solid dye-sensitized photoelectrochemical solar cells, photo induced water splitting, dye synthesized solar cells, environmental purifications, gas sensors, display devices, batteries, as well as, solar cells with an organic or inorganic extremely thin absorber. These thin films are also of interest for the photooxidation of water, photocatalysis, electro chromic devices and other uses.

  10. Electrochemical deposition of black nickel solar absorber coatings on stainless steel AISI316L for thermal solar cells

    OpenAIRE

    Lira-Cantú, Monica; Morales Sabio, Angel; Brustenga, Alex; Gómez-Romero, P.

    2005-01-01

    We report the electrochemical deposition of nanostructured nickel-based solar absorber coatings on stainless steel AISI type 316L. A sol–gel silica-based antireflection coating, from TEOS, was also applied to the solar surface by the dip-coating method. We report our initial results and analyze the influence of the stainless steel substrate on the final total reflectance properties of the solar absorber. The relation between surface morphology, observed by SEM and AFM, the comp...

  11. Structural, Optical and Electrical Properties of Nanocrystalline Cuprous Oxide Thin Film Deposited By Chemical Method

    Directory of Open Access Journals (Sweden)

    Prakash Bansilal Ahirrao

    2010-06-01

    Full Text Available Cuprous oxide (Cu2O is an interesting p-type semiconductor material used in solar cell applications.  The Modified Chemical Bath Deposition (M-CBD method is suitable for growing thin multilayer structure due to low deposition temperature. This method does not require any sophisticated instrument and substrate need not to be conductive. The nanocrystalline Cu2O thin films were deposited on glass substrates by M-CBD method. The deposited films were characterized by different characterization techniques to study structural, surface morphological, optical and electrical properties. The structural studies show that, the formation of Cu2O thin films with an average crystallite size of 14 nm. Optical studies show a direct band gap 2.48 eV. The room temperature electrical resistivity is of the order of 1.3 kW-cm and activation energy 0.33 eV. The films exhibit p-type electrical conductivity as seen by thermo-emf measurements.

  12. Thin films of barium fluoride scintillator deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    We have used metal-organic chemical vapor deposition (MOCVD) technology to coat optical substrates with thin (≅ 1-10 μm thick) films of inorganic BaF2 scintillator. Scanning electron microscope (SEM) photographs indicate that high-quality epitaxial crystalline film growth was achieved, with surface defects typically smaller than optical wavelengths. The scintillation light created by the deposition of ionizing radiation in the scintillating films was measured with a photomultiplier and shown to be similar to bulk melt-grown crystals. The results demonstrate the potential of these composite optical materials for planar and fiber scintillation radiation detectors in high energy and nuclear physics, synchrotron radiation research, and in radiation and X-ray imaging and monitoring. (orig.)

  13. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  14. Kesterite Deposited by Spray Pyrolysis for Solar Cell Applications

    OpenAIRE

    Espindola Rodriguez, Moises

    2015-01-01

    Solar cells generate electrical power by direct conversion of solar radiation into electricity using semiconductors. Once produced, the solar cells do not require the use of water; operate in silence and can be easily installed almost everywhere, as solar panels with low technological risk. In this thesis new photovoltaic materials and solar cells are investigated. From the beginning of the semiconductor era, silicon has been present; the semiconductor theory improved with the silicon tec...

  15. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    International Nuclear Information System (INIS)

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface

  16. SOLAR ORIGINS: PLACE AND CHEMICAL COMPOSITION

    Directory of Open Access Journals (Sweden)

    L. Carigi

    2011-01-01

    Full Text Available Discutimos un modelo de evolución química con rendimientos dependientes de Z que reproduce los gradientes de O/H, C/H y C/O del disco Galáctico y la historia química de la vecindad solar. El modelo ajusta las abundancias de H, He, C y O derivadas a partir de líneas de recombinación en la región H ii M17 (incluyendo la fracción de átomos de C y O embebida en polvo; las abundancias protosolares de H, He, C, O y Fe; y las relaciones C/O-O/H, C/Fe-Fe/H y O/Fe-Fe/H derivadas de estrellas de la vecindad solar. El ajuste del modelo con las abundancias protosolares al tiempo de formación del Sol implica que el Sol se originó en un medio químicamente bien mezclado a una distancia galactocéntrica de 7.6 ± 0.8 kpc.

  17. Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

    OpenAIRE

    Temple Boyer, Pierre; Jalabert, L.; Masarotto, L.; Alay, Josep Lluís; Morante i Lleonart, Joan Ramon

    2000-01-01

    Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane SiH4 and ammonia NH3 at high temperature (750°C) and the influences of the NH3/SiH4 gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene SiH2 into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich...

  18. A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2016-08-01

    We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

  19. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    Science.gov (United States)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  20. Structural properties of zinc oxide deposited using atmospheric pressure combustion chemical vapour deposition

    International Nuclear Information System (INIS)

    In this study the deposition of thin zinc oxide (ZnO) films under atmospheric pressure conditions was investigated. The deposition technique applied was combustion chemical vapour deposition (CCVD), at which a propane–air mixture was combusted in a burner. Dissolved zinc nitrate was used as precursor, which was guided as aerosol droplets by the processing gas flow directly into the reaction zone. Fundamental investigations were performed to form undoped ZnO. The structural properties of the films were analysed in dependence of the substrate temperature during the coating process. The presence of crystalline ZnO structures was proved and differences in film growth and crystallite sizes are revealed. Additionally, the particles generated by the CCVD-flame are characterised. The thin films showed a slight excess of Zn and several states of binding energy could be observed by fitting the core level spectra. Scanning and transmission electron microscopy also indicated ordered structures and additionally different orientations of crystallites were observed. - Highlights: • Columnar growth structures of ZnO by CCVD were observed. • The presence of polycrystalline ZnO with (002) as main orientation was confirmed. • Initial particles significantly differ from crystallite sizes of the resulting films. • The films show an excess of Zn with a Zn-to-O ratio of around 1.7

  1. Structural properties of zinc oxide deposited using atmospheric pressure combustion chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zunke, I., E-mail: iz@innovent-jena.de [Innovent e.V. Technology Development, Department of Surface Engineering, Prüssingstr. 27B, 07745 Jena (Germany); Wolf, S. [University of Jena, Institute for Solid State Physics, Helmholtzweg 3/5, 07745 Jena (Germany); Heft, A.; Schimanski, A.; Grünler, B. [Innovent e.V. Technology Development, Department of Surface Engineering, Prüssingstr. 27B, 07745 Jena (Germany); Ronning, C.; Seidel, P. [University of Jena, Institute for Solid State Physics, Helmholtzweg 3/5, 07745 Jena (Germany)

    2014-08-28

    In this study the deposition of thin zinc oxide (ZnO) films under atmospheric pressure conditions was investigated. The deposition technique applied was combustion chemical vapour deposition (CCVD), at which a propane–air mixture was combusted in a burner. Dissolved zinc nitrate was used as precursor, which was guided as aerosol droplets by the processing gas flow directly into the reaction zone. Fundamental investigations were performed to form undoped ZnO. The structural properties of the films were analysed in dependence of the substrate temperature during the coating process. The presence of crystalline ZnO structures was proved and differences in film growth and crystallite sizes are revealed. Additionally, the particles generated by the CCVD-flame are characterised. The thin films showed a slight excess of Zn and several states of binding energy could be observed by fitting the core level spectra. Scanning and transmission electron microscopy also indicated ordered structures and additionally different orientations of crystallites were observed. - Highlights: • Columnar growth structures of ZnO by CCVD were observed. • The presence of polycrystalline ZnO with (002) as main orientation was confirmed. • Initial particles significantly differ from crystallite sizes of the resulting films. • The films show an excess of Zn with a Zn-to-O ratio of around 1.7.

  2. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers.

  3. Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Lazcano, Y. [Department of Solar Energy Materials, Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos-62580 (Mexico); Pena, Yolanda [Department of Solar Energy Materials, Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos-62580 (Mexico); Nair, M.T.S. [Department of Solar Energy Materials, Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos-62580 (Mexico)]. E-mail: mtsn@cie.unam.mx; Nair, P.K. [Department of Solar Energy Materials, Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos-62580 (Mexico)

    2005-12-22

    We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb{sub 2}Se{sub 3}. Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10{sup -8} ({omega} cm){sup -1} and photoconductivity, about 10{sup -6} ({omega} cm){sup -1} under tungsten halogen lamp illumination with intensity of 700 W m{sup -2}. An estimate for the mobility life time product for the film is 4 x 10{sup -9} cm{sup 2} V{sup -1}.

  4. Strain relaxation in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

    2013-12-07

    The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

  5. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Shin Jinhong [Texas Materials Institute, University of Texas at Austin, Austin, TX 78750 (United States); Waheed, Abdul [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Winkenwerder, Wyatt A. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Kim, Hyun-Woo [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Agapiou, Kyriacos [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Jones, Richard A. [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Hwang, Gyeong S. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States)]. E-mail: ekerdt@che.utexas.edu

    2007-05-07

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO{sub 2} containing {approx} 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH{sub 2}(PMe{sub 3}){sub 4} (Me = CH{sub 3}) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

  6. Field emission properties of chemical vapor deposited individual graphene

    Energy Technology Data Exchange (ETDEWEB)

    Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

    2014-03-03

    Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10 nA current were found to be 515, 610, and 870 V/μm for vacuum gap of 400, 300, and 200 nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

  7. Chemical vapour deposition synthetic diamond: materials, technology and applications

    Science.gov (United States)

    Balmer, R. S.; Brandon, J. R.; Clewes, S. L.; Dhillon, H. K.; Dodson, J. M.; Friel, I.; Inglis, P. N.; Madgwick, T. D.; Markham, M. L.; Mollart, T. P.; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A. J.; Wilman, J. J.; Woollard, S. M.

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

  8. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  9. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  10. Advanced titania buffer layer architectures prepared by chemical solution deposition

    Science.gov (United States)

    Kunert, J.; Bäcker, M.; Brunkahl, O.; Wesolowski, D.; Edney, C.; Clem, P.; Thomas, N.; Liersch, A.

    2011-08-01

    Chemical solution deposition (CSD) was used to grow high-quality (100) oriented films of SrTiO3 (STO) on CSD CaTiO3 (CTO), Ba0.1Ca0.9TiO3 (BCT) and STO seed and template layers. These template films bridge the lattice misfit between STO and the nickel-tungsten (NiW) substrate, assisting in dense growth of textured STO. Additional niobium (Nb) doping of the STO buffer layer reduces oxygen diffusion which is necessary to avoid undesired oxidation of the NiW. The investigated templates offer suitable alternatives to established standard buffer systems like La2Zr2O7 (LZO) and CeO2 for coated conductors.

  11. Early chemical history of the solar system

    Science.gov (United States)

    Grossman, L.; Larimer, J. W.

    1974-01-01

    By using equilibrium thermodynamics, the sequence of condensation of mineral phases from a cooling nebula of solar composition has been calculated. The theoretical models suggest that the chemistry and mineralogy of Ca-Al-rich inclusions in C2 and C3 chondrites were established during condensation at temperatures above 1300 K. Fractionation of such inclusions is necessary to account for the refractory element depletions of ordinary and enstatite chondrites relative to the carbonaceous chondrites. The metal-silicate fractionation in ordinary chondrites took place in the nebula at a temperature below 1000 K and at .00001 atm total pressure. The volatile element depletion of C2 and C3 chondrites relative to C1 chondrites took place during chondrule formation: the most volatile elements are depleted in ordinary chondrites because they accreted before these elements were totally condensed.

  12. Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Scholtes, T.L.M.; Nanver, L.K.

    2012-01-01

    The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and

  13. An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Nanver, L.K.

    2012-01-01

    In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon waf

  14. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    Science.gov (United States)

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  15. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  16. Chemical vapor deposition coatings for oxidation protection of titanium alloys

    Science.gov (United States)

    Cunnington, G. R.; Robinson, J. C.; Clark, R. K.

    1991-01-01

    Results of an experimental investigation of the oxidation protection afforded to Ti-14Al-21Nb and Ti-14Al-23Nb-2V titanium aluminides and Ti-17Mo-3Al-3Nb titanium alloy by aluminum-boron-silicon and boron-silicon coatings are presented. These coatings are applied by a combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. The former is for the application of aluminum, and the latter is for codeposition of boron and silicon. Coating thickness is in the range of 2 to 7 microns, and coating weights are 0.6 to 2.0 mg/sq cm. Oxidation testing was performed in air at temperatures to 1255 K in both static and hypersonic flow environments. The degree of oxidation protection provided by the coatings is determined from weight change measurements made during the testing and post test compositional analyses. Temperature-dependent total normal emittance data are also presented for four coating/substrate combinations. Both types of coatings provided excellent oxidation protection for the exposure conditions of this investigation. Total normal emittances were greater than 0.80 in all cases.

  17. Chemical aspects of the gallex solar neutrino experiment

    International Nuclear Information System (INIS)

    The Gallex solar neutrino experiment, described in the previous paper, will utilize 30 tons of gallium, in the form of an aqueous solution of 8M GaCl3, as a radiochemical detector of solar neutrinos. The capture of a neutrino by 71Ga will initiate inverse β decay and produce 71Ge, which decays with an 11.2-day half-life. This talk will focus on the chemical steps that have been devised to separate the minute amounts of product germanium from the gallium solution and to convert the 71Ge to a chemical form suitable for inclusion in a proportional counter. Questions concerning the specification and determination of impurity levels in the GaCl3 solution, so as to preclude reactions on impurities that would mimic the capture of a solar neutrino by 71Ga, will also be discussed

  18. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    Science.gov (United States)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  19. Laser diagnostics of chemical vapour deposition of diamond films

    CERN Document Server

    Wills, J B

    2002-01-01

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH sub 4 / H sub 2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH sub 3 , NH and C sub 2 H sub 2 in a hot filament (HF) activated gas mixture and CH, C sub 2 and C sub 2 H sub 2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH sub 3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O sub 2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (approx 10 sup 1 sup 3 molecules / cm...

  20. Vertically aligned peptide nanostructures using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Vasudev, Milana C; Koerner, Hilmar; Singh, Kristi M; Partlow, Benjamin P; Kaplan, David L; Gazit, Ehud; Bunning, Timothy J; Naik, Rajesh R

    2014-02-10

    In this study, we utilize plasma-enhanced chemical vapor deposition (PECVD) for the deposition of nanostructures composed of diphenylalanine. PECVD is a solvent-free approach and allows sublimation of the peptide to form dense, uniform arrays of peptide nanostructures on a variety of substrates. The PECVD deposited d-diphenylalanine nanostructures have a range of chemical and physical properties depending on the specific discharge parameters used during the deposition process. PMID:24400716

  1. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  2. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  3. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  4. Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

  5. Low-cost plasmonic solar cells prepared by chemical spray pyrolysis

    Directory of Open Access Journals (Sweden)

    Erki Kärber

    2014-12-01

    Full Text Available Solar cells consisting of an extremely thin In2S3/CuInS2 buffer/absorber layer uniformly covering planar ZnO were prepared entirely by chemical spray pyrolysis. Au nanoparticles (Au-NPs were formed via thermal decomposition of a gold(III chloride trihydrate (HAuCl4·3H2O precursor by spraying 2 mmol/L of the aqueous precursor solution onto a substrate held at 260 °C. Current–voltage scans and external quantum efficiency spectra were used to evaluate the solar cell performance. This work investigates the effect of the location of the Au-NP layer deposition (front side vs rear side in the solar cell and the effect of varying the volume (2.5–10 mL of the sprayed Au precursor solution. A 63% increase (from 4.6 to 7.5 mA/cm2 of the short-circuit current density was observed when 2.5 mL of the precursor solution was deposited onto the rear side of the solar cell.

  6. Preparation and characterization of ZnS thin films by the chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Iwashita, Taisuke [Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science 1-14-6 Kudankita, Chiyoda, Tokyo 102-0073 (Japan); Ando, Shizutoshi, E-mail: ando_shi@rs.kagu.tus.ac.jp [Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science 1-14-6 Kudankita, Chiyoda, Tokyo 102-0073 (Japan); Research Institute for Science and Technology, Advanced Device Laboratories (ADL), Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601 (Japan); Research Institute for Science and Technology, Photovoltaic Science and Technology Research Division, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601 (Japan)

    2012-10-01

    ZnS thin films prepared on quartz substrates by the chemical bath deposition (CBD) method with three type temperature profile processes have been investigated by X-ray diffraction, scanning electron microscope, energy dispersive X-ray analysis and light transmission. One is a 1-step growth process, and the other is 2-steps growth and self-catalyst growth processes. The surface morphology of CBD-ZnS thin films prepared by the CBD method with the self-catalyst growth process is flat and smooth compared with that prepared by the 1-step and 2-steps growth processes. The self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement in crystallinity of ZnS thin films prepared by CBD. ZnS thin films prepared by CBD method with self-catalyst growth process can be expected for improvement in the conversion efficiency of Cu(InGa)Se{sub 2}-based thin film solar cells by using it for the buffer layer. - Highlights: Black-Right-Pointing-Pointer ZnS thin films were prepared by chemical bath deposition (CBD) method. Black-Right-Pointing-Pointer The crystallization of CBD-ZnS films was further improved. Black-Right-Pointing-Pointer The crystallinity of CBD-ZnS thin films is dependent on the zinc source material. Black-Right-Pointing-Pointer Self-catalyst growth process is useful for the growth of thin films by CBD method. Black-Right-Pointing-Pointer It is expected to improve the conversion efficiency of CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells.

  7. Thermogravimetric analysis of cobalt-filled carbon nanotubes deposited by chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh, Babu P. [Materials Ireland Polymer Research Centre, Trinity College, Dublin-1 (Ireland); Blau, W.J. [Materials Ireland Polymer Research Centre, Trinity College, Dublin-1 (Ireland); Tyagi, P.K. [Department of Physics, Indian Institute of Technology, Bombay (India); Misra, D.S. [Department of Physics, Indian Institute of Technology, Bombay (India); Ali, N. [Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Gracio, J. [Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Cabral, G. [Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Titus, E. [Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal)]. E-mail: elby@mec.ua.pt

    2006-01-03

    In this paper, we report results from an investigation studying the purification of Co-filled carbon nanotubes (CNTs) using Thermogravimetric analysis (TGA). The as-grown CNTs were prepared using Microwave Plasma Chemical Vapour Deposition (MPCVD). Transmission electron microscopy (TEM), Fourier Transform Infrared (FTIR) and Raman spectroscopy were used to characterise the CNT samples. The CNTs produced by MPCVD were filled with cobalt and consisted of thick multi-walls. After TGA purification at 900 deg. C, 30 wt.% Co-filled CNTs remained in the TGA pan. However, while investigating the un-filled commercial CNTs (thin multiwalled), the sample completely burnt out at around 650 deg. C in the TGA furnace. The high thermal stability and the ability of thick-walled CNTs to act as an effective protective shield which prevents the oxidation of encapsulated cobalt have been demonstrated.

  8. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  9. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  10. Electro deposition of cuprous oxide for thin film solar cell applications

    Science.gov (United States)

    Shahrestani, Seyed Mohammad

    p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the

  11. Grain boundaries in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    The scientific literature on grain boundaries (GBs) in graphene was reviewed. The review focuses mainly on the experimental findings on graphene grown by chemical vapor deposition (CVD) under a very wide range of experimental conditions (temperature, pressure hydrogen/hydrocarbon ratio, gas flow velocity and substrates). Differences were found in the GBs depending on the origin of graphene: in micro-mechanically cleaved graphene (produced using graphite originating from high-temperature, high-pressure synthesis), rows of non-hexagonal rings separating two perfect graphene crystallites are found more frequently, while in graphene produced by CVD—despite the very wide range of growth conditions used in different laboratories—GBs with more pronounced disorder are more frequent. In connection with the observed disorder, the stability of two-dimensional amorphous carbon is discussed and the growth conditions that may impact on the structure of the GBs are reviewed. The most frequently used methods for the atomic scale characterization of the GB structures, their possibilities and limitations and the alterations of the GBs in CVD graphene during the investigation (e.g. under e-beam irradiation) are discussed. The effects of GB disorder on electric and thermal transport are reviewed and the relatively scarce data available on the chemical properties of the GBs are summarized. GBs are complex enough nanoobjects so that it may be unlikely that two experimentally produced GBs of several microns in length could be completely identical in all of their atomic scale details. Despite this, certain generalized conclusions may be formulated, which may be helpful for experimentalists in interpreting the results and in planning new experiments, leading to a more systematic picture of GBs in CVD graphene. (paper)

  12. Anion Effect of Zinc Source on Chemically Deposited ZnS(O,OH Films

    Directory of Open Access Journals (Sweden)

    K. Ernits

    2009-01-01

    Full Text Available The study on the anion effect of different Zn sources—Zn(CH3COO2, ZnCl2, ZnI2, Zn(NO32 and ZnSO4—on the chemical deposition of ZnS(O,OH films revealed that the growth rate and composition of the ZnS(O,OH layer depend on the instability constant (pK value of the corresponding Zn-complex Zn(Ln in the chemical bath solution. In the region of pKZn(NH32+>pKZn(Ln the ZnS(O,OH film's growth rate and ZnS concentration in films increased with the increasing pK value of the used Zn salt complex up to the pK value of the Zn[NH3]2+ complex and decreased in the region where pKZn(NH32+deposited ZnS(O,OH films did not depend on the Zn precursor's instability constant, the ZnS(O,OH film from zinc nitrate containing bath has higher band gap energy (Eg = 3.8 eV. The maximum efficiency of CISSe and CZTSSe monograin layer solar cells was gained with ZnS(O,OH buffer layer deposited from CBD solution containing Zn(CH3COO2 as Zn source, which provided the highest growth rate and ZnS concentration in the ZnS(O,OH film on glass substrates.

  13. Growth of graphene underlayers by chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Mopeli Fabiane

    2013-11-01

    Full Text Available We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD. Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT to yield poly (methyl methacrylate (PMMA/graphene/glass or (2 inverted transfer (IT to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM and atomic force microscopy (AFM were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  14. Development of microforming process combined with selective chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Koshimizu Kazushi

    2015-01-01

    Full Text Available Microforming has been received much attention in the recent decades due to the wide use of microparts in electronics and medical purpose. For the further functionalization of these micro devices, high functional surface with noble metals and nanomaterials are strongly required in bio- and medical fields, such as bio-sensors. To realize the efficient manufacturing process, which can deform the submillimeter scale bulk structure and can construct the micro to nanometer scale structures in one process, the present study proposes a combined process of microforming for metal foils with a selective chemical vapor deposition (SCVD on the active surface of work materials. To clarify the availability of this proposed process, the feasibility of SCVD of functional materials to active surface of titanium (Ti was investigated. CVD of iron (Fe and carbon nanotubes (CNTs which construct CNTs on the patterned surface of active Ti and non-active oxidation layer were conducted. Ti thin films on silicon substrate and Fe were used as work materials and functional materials, respectively. CNTs were grown on only Ti surface. Consequently, the selectivity of the active surface of Ti to the synthesis of Fe particles in CVD process was confirmed.

  15. Growth of graphene underlayers by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  16. Structure of chemical vapor deposition titania/silica gel

    Energy Technology Data Exchange (ETDEWEB)

    Leboda, R.; Gun' ko, V.M.; Marciniak, M.; Malygin, A.A.; Malkin, A.A.; Grzegorczyk, W.; Trznadel, B.J.; Pakhlov, E.M.; Voronin, E.F.

    1999-10-01

    The structure of porous silica gel/titania synthesized using chemical vapor deposition (CVD) of titania via repeated reactions of TiCl{sub 4} with the surface and subsequent hydrolysis of residual Ti-Cl bonds at different temperatures was investigated by means of low-temperature nitrogen adsorption-desorption, X-ray diffraction (XRD), IR spectroscopy, and theoretical methods. A globular model of porous solids with corpuscular structure was applied to estimate the porosity parameters of titania/silica gel adsorbents. The utilization of this model is useful, for example, to predict conditions for synthesis of titania/silica with a specified structure. Analysis of pore parameters and fractal dimension suggests that the porosity and fractality of samples decrease with increasing amount of TiO{sub 2} covering the silica gel surface in a nonuniform layer, which represents small particles embedded in pores and larger particles formed at the outer surface of silica globules. Theoretical simulation shows that the Si-O-Ti linkages between the cover and the substrate can be easily hydrolyzed, which is in agreement with the IR data corresponding to the absence of a band at 950 cm {sup {minus}1} (characteristic of Si-O-Ti bridges) independent of the concentration of CVD-titania.

  17. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity.

    Science.gov (United States)

    Bérard, Ariane; Patience, Gregory S; Chouinard, Gérald; Tavares, Jason R

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  18. Characterization of Defects in Chemical Vapour Deposited Diamonds

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ming-Long; XIA Yi-Ben; WANG Lin-Jun; GU Bei-Bei

    2005-01-01

    @@ Room-temperature Raman and PL spectra, photocurrent (PC) and thermally stimulated current (TSC) were measured to investigate the mid-gap defects in diamonds grown by using a hot-filament chemical vapour deposition (CVD) technique. The [Si-V]0 centres caused by the Si-C bonds in diamond grains and at grain boundaries are located at 1.68eV. We firstly detect the level 1.55eV by using PL and it is tentatively attributed to the zero-phonon luminescence line or vibronic band of the [Si-V]0 induced by the Si-O bonds. The 2.7-3.2eV and 1.9-2.1 eV PC peaks were detected and discussed. The [N-V] complex may be attributed to these defect levels.Some shallow energy levels lower than 1.0eV were also observed in the CVD diamond.

  19. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity

    Science.gov (United States)

    Bérard, Ariane; Patience, Gregory S.; Chouinard, Gérald; Tavares, Jason R.

    2016-08-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle.

  20. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  1. Charged impurity-induced scatterings in chemical vapor deposited graphene

    Science.gov (United States)

    Li, Ming-Yang; Tang, Chiu-Chun; Ling, D. C.; Li, L. J.; Chi, C. C.; Chen, Jeng-Chung

    2013-12-01

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  2. Large Storm Energy Deposition and Solar Wind Drivers: A Study of Geoeffectiveness

    Science.gov (United States)

    Turner, N. E.; Lopez, R. E.

    2004-12-01

    We examine the role of solar wind driving conditions in the deposition of large amounts of energy in the magnetosphere-ionosphere system. Our database consists of eight storms ranging in size, including especially the October and November 2003 superstorms. We estimate energy deposition into the ring current, ionospheric Joule heating, and auroral precipitation for each event and compare with relevant solar wind data. Results suggest that the magnetosonic Mach number of the solar wind may be a useful parameter in identifying the potential for large amounts of energy deposition, possibly because of the role of the bow shock in modulating the magnetosheath field, and therefore its influence of reconnection rates. We use Dst, ionospheric indices, and MHD simulation results where available to investigate the magnetospheric response to different types of solar wind energy input. Our results are examined with a focus on superstorms and the driving conditions observed in connection with them.

  3. Low-Temperature Crystalline Titanium Dioxide by Atomic Layer Deposition for Dye-Sensitized Solar Cells

    KAUST Repository

    Chandiran, Aravind Kumar

    2013-04-24

    Low-temperature processing of dye-sensitized solar cells (DSCs) is crucial to enable commercialization with low-cost, plastic substrates. Prior studies have focused on mechanical compression of premade particles on plastic or glass substrates; however, this did not yield sufficient interconnections for good carrier transport. Furthermore, such compression can lead to more heterogeneous porosity. To circumvent these problems, we have developed a low-temperature processing route for photoanodes where crystalline TiO2 is deposited onto well-defined, mesoporous templates. The TiO2 is grown by atomic layer deposition (ALD), and the crystalline films are achieved at a growth temperature of 200 C. The ALD TiO2 thickness was systematically studied in terms of charge transport and performance to lead to optimized photovoltaic performance. We found that a 15 nm TiO2 overlayer on an 8 μm thick SiO2 film leads to a high power conversion efficiency of 7.1% with the state-of-the-art zinc porphyrin sensitizer and cobalt bipyridine redox mediator. © 2013 American Chemical Society.

  4. Solar-driven chemical energy source for a Martian biota

    Science.gov (United States)

    Clark, B. C.

    1979-01-01

    Microorganisms deep in the Martian soil could derive energy indirectly from the sun via chemical reactions involving atmospheric photolysis products of the solar ultraviolet flux. The Viking discovery of a chemically uniform regolith which, though poor in organics, is rich in sulfur-containing compounds suggests reaction sequences in which sulfur is recycled through reduced and oxidized states by biologically catalyzed reactions with photochemically-produced atmospheric constituents. One candidate reaction, reduction of soil sulfate minerals by molecular hydrogen, is already exploited on earth by bacteria of the ubiquitous and tenacious Desulfovibrio genus.

  5. ZnO/CdS/CuInSe{sub 2} photovoltaic cells fabricated using chemical bath deposited CdS buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, S.N.; Lam, W.W.; Qiu, C.X.; Shih, I. [Department of Electrical Engineering, McGill University, Montreal, PQ (Canada)

    1997-04-14

    CdS thin films have been prepared by using chemical bath deposition. The effects of bath temperature and concentration of NH{sub 4}OH were studied. Optimum deposition conditions were established. The resulted CdS thin films exhibit optical transmissions in excess of 90 over the majority of the solar spectrum. ZnO/CdS/CuInSe{sub 2} solar cells were fabricated on electrodeposited CuInSe{sub 2} thin films. A conversion efficiency of 6.3 was obtained with an active area of 7.8 mm{sup 2} (no AR coating)

  6. Chemical signatures of planets: beyond solar-twins

    CERN Document Server

    Ramirez, I; Asplund, M

    2013-01-01

    Elemental abundance studies of solar twin stars suggest that the solar chemical composition contains signatures of the formation of terrestrial planets in the solar system, namely small but significant depletions of the refractory elements. To test this hypothesis, we study stars which, compared to solar twins, have less massive convective envelopes (therefore increasing the amplitude of the predicted effect) or are, arguably, more likely to host planets (thus increasing the frequency of signature detections). We measure relative atmospheric parameters and elemental abundances of a late-F type dwarf sample (52 stars) and a sample of metal-rich solar analogs (59 stars). We detect refractory-element depletions with amplitudes up to about 0.15 dex. The distribution of depletion amplitudes for stars known to host gas giant planets is not different from that of the rest of stars. The maximum amplitude of depletion increases with effective temperature from 5650 K to 5950 K, while it appears to be constant for warme...

  7. Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

    NARCIS (Netherlands)

    Aresta, G.; Palmans, J.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Organosilicon layers have been deposited from 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3) by means of the initiated-chemical vapor deposition (i-CVD) technique in a deposition setup, ad hoc designed for the engineering of multilayer moisture permeation barriers. The application of Fourier

  8. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying substrat

  9. Corrosion deposits removal from Kozloduy NPP VVER-440 steam generator tubing by chemical cleaning

    International Nuclear Information System (INIS)

    A strict control of primary and secondary circuits metal equipment corrosion of VVER-440 Kozloduy NPP units has been performed for the whole period of operation. This is carried out following a specific program including visual inspection and chemical analysis of equipment corrosion deposits. During their migration, the corrosion products deposit on the metal surface in the so-called standstill zones. One of these is the steam generator. The process results in: deterioration of thermal exchange; deterioration of corrosion conditions under deposits corrosion, pitting corrosion, etc. Using quantity deposits data and deposits chemical consistence, chemical cleaning of steam generator surfaces is performed. Decision for such chemical treatment of secondary circuit equipment is taken when the amount of deposits on the steam generator tubing is greater than 150 g/m2. This limit is based on operational experience and manufacturer requirements. (R.P.)

  10. Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current

    Science.gov (United States)

    Song, Ying; Ichimura, Masaya

    2012-10-01

    Cu2O thin films were deposited on indium-tin-oxide-coated glass from an aqueous solution containing CuSO4, lactic acid and KOH by the galvanostatic electrochemical deposition at 40 °C with several different current densities. The photo-absorption of Cu2O was increased and the conduction type was changed from weak p-type to clear p-type by raising the current value. Cu2O(2)/Cu2O(1)/ZnO three-layer heterojunctions were fabricated electrochemically by modulation of deposition current density of Cu2O. The first Cu2O layer Cu2O(1) was deposited at a lower deposition current, and the second one Cu2O(2) at a higher current. Under the optimized condition, the conversion efficiency of a Cu2O(2)/Cu2O(1)/ZnO solar cell was found to be higher than that of a Cu2O(1)/ZnO solar cell.

  11. Structure and composition of Zn(x)Cd(1-xS) films synthesized through chemical bath deposition.

    Science.gov (United States)

    Tosun, B Selin; Pettit, Chelsea; Campbell, Stephen A; Aydil, Eray S

    2012-07-25

    Zinc cadmium sulfide (ZnxCd1-xS) thin films grown through chemical bath deposition are used in chalcopyrite solar cells as the buffer layer between the n-type zinc oxide and the p-type light absorbing chalcopyrite film. To optimize energetic band alignment and optical absorption, advanced solar cell architectures require the ability to manipulate x as a function of distance from the absorber-ZnCdS interface. Herein, we investigate the fundamental factors that govern the evolution of the composition as a function of depth in the film. By changing the initial concentrations of Zn and Cd salts in the bath, the entire range of overall compositions ranging from primarily cubic ZnS to primarily hexagonal CdS could be deposited. However, films are inhomogeneous and x varies significantly as function of distance from the film-substrate interface. Films with high overall Zn concentration (x > 0.5) exhibit a Cd-rich layer near the film-substrate interface because Cd is more reactive than Zn. This layer is typically beneath a nearly pure ZnS film that forms after the Cd-rich layers are deposited and Cd is depleted in the bath. In films with high overall Cd concentration (x < 0.5) the Zn concentration rises towards the film's surface. Fortunately, these gradients are favorable for solar cells based on low band gap chalcopyrite films.

  12. Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

    Science.gov (United States)

    Kim, Hye Jin; Kim, Chae-Woong; Jung, Duk Young; Jeong, Chaehwan

    2016-05-01

    This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells. Room temperature time-resolved photoluminescence (TR-PL) measurements were performed on the Cu(In,Ga)Se2 (CIGS) thin film and CdS/CIGS samples to determine the recombination process of the photo-generated minority carrier. The device performance was found to be dependent on the thickness of the CdS layer. As the thickness of the CdS increases, the fill factor and the series resistance increased to 61.66% and decreased to 8.35 Ω, respectively. The best condition was observed at a reaction temperature of 60 degrees C, and its conversion efficiency was 12.20%.

  13. Electrical and magnetoresistivity studies in chemical solution deposited La

    Energy Technology Data Exchange (ETDEWEB)

    Angappane, S.; Murugaraj, P.; Sethupathi, K.; Rangarajan, G.; Sastry, V. S.; Chakkaravarthi, A. Arul; Ramasamy, P.

    2001-06-01

    High quality magnetoresistive La{sub (1{minus}x)}Ca{sub x}MnO{sub 3} thin films have been prepared by the chemical solution deposition technique. A solution of propionate precursors of lanthanum, calcium, and manganese in propionic acid was used for this purpose. Films of varying compositions (x varying from 0.1 to 0.4) were spin coated on to LaAlO{sub 3}(100) and SrTiO{sub 3}(100) substrates at room temperature and pyrolyzed in the temperature range 600{endash}850{degree}C. For fixed compositions, annealing at higher temperatures shifts the insulator{endash}metal transition temperature (T{sub I{endash}M}) to higher values accompanied by a reduction in the resistivity values. The T{sub I{endash}M} variation for different x values was found to be less pronounced in the compositions x=0.2, 0.3, and 0.4. Typical T{sub I{endash}M} values of 283 K and 290 K were obtained for La{sub 0.7}Ca{sub 0.3}MnO{sub 3} coated on LaAlO{sub 3} and SrTiO{sub 3} substrates, respectively, when annealed at 850{degree}C. The substrate effect was found to be more pronounced for the x value 0.1 which showed two peaks (one at 271 K and another at 122 K) in the {rho}-T curve. The roles of substrate mismatch, composition variation, and annealing temperatures are discussed. {copyright} 2001 American Institute of Physics.

  14. Review of chemical vapor deposition of graphene and related applications.

    Science.gov (United States)

    Zhang, Yi; Zhang, Luyao; Zhou, Chongwu

    2013-10-15

    Since its debut in 2004, graphene has attracted enormous interest because of its unique properties. Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications since the method was first reported in 2008/2009. In this Account, we review graphene CVD on various metal substrates with an emphasis on Ni and Cu. In addition, we discuss important and representative applications of graphene formed by CVD, including as flexible transparent conductors for organic photovoltaic cells and in field effect transistors. Growth on polycrystalline Ni films leads to both monolayer and few-layer graphene with multiple layers because of the grain boundaries on Ni films. We can greatly increase the percentage of monolayer graphene by using single-crystalline Ni(111) substrates, which have smooth surface and no grain boundaries. Due to the extremely low solubility of carbon in Cu, Cu has emerged as an even better catalyst for the growth of monolayer graphene with a high percentage of single layers. The growth of graphene on Cu is a surface reaction. As a result, only one layer of graphene can form on a Cu surface, in contrast with Ni, where more than one layer can form through carbon segregation and precipitation. We also describe a method for transferring graphene sheets from the metal using polymethyl methacrylate (PMMA). CVD graphene has electronic properties that are potentially valuable in a number of applications. For example, few-layer graphene grown on Ni can function as flexible transparent conductive electrodes for organic photovoltaic cells. In addition, because we can synthesize large-grain graphene on Cu foil, such large-grain graphene has electronic properties suitable for use in field effect transistors. PMID:23480816

  15. Molecular designing of precursors for chemical vapor deposition

    International Nuclear Information System (INIS)

    Both tin oxide and antimony oxide, can act as gas sensing material whose activity/selectivity is enhanced by the incorporation of a second metal. We are interested in the formation of bimetallic and trimetallic carboxylates and alkoxides which can be used as single source precursors for such mixed metal oxides. Sb(dmae)/sub 3/ (dmae=OCH/sub 2/CH/sub 2/(CH/sub 3/)sub 2/ has been prepared from Sb(OC/sub 2/H/sub 5/)/sub 3/ and Hdmae and used to generate the bimetallic materials Sb(dmae)/sub 3/Cd(acac)/sub 2/. Sn(acac)/sub 2/ hydrolyses to yield crystalline cage Sn/sub 4/O/sub 6/(dmae)/sub 4/. Sn(dmae)/sub 2/ can also be used to generate bimetallic materials such as [Sn(dmae)/sub 2/ Cd(acac)/sub 2/]/sub 2/]. Bimetallic and trimetallic carboxylates of general formula [R/sub 3/Ge-CHRCH/sub 2/COO]/sub 4-n/SnRn. [Where R=CH/sub 3/, C/sub 2/H/sub 5/, C/sub 6/H/sub 5/, tolyl, cyclohexyl, (CH/sub 3/)/sub 3/ Si CH/sub 2/-etc.] have been prepared and characterized by various analytic techniques. Chemical vapor deposition using Sb(dmae)/sub 3/ Cd(acac)/sub 2/ and various bimetallic carboxylates yield thin films of Cd/sub 2/Sb/sub 2/O/sub 7/ and SnOGeO respectively. (author)

  16. Atomic layer deposition grown MO{sub x} thin films for solar water splitting: Prospects and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Trilok; Lehnen, Thomas; Leuning, Tessa; Mathur, Sanjay, E-mail: sanjay.mathur@uni-koeln.de [Institute of Inorganic Chemistry, University of Cologne, Greinstrasse 6, D-50939 Cologne (Germany)

    2015-01-15

    The magnitude of energy challenge not only calls for efficient devices but also for abundant, inexpensive, and stable photoactive materials that can enable efficient light harvesting, charge separation and collection, as well as chemical transformations. Photoelectrochemical systems based on semiconductor materials have the possibility to transform solar energy directly into chemical energy the so-called “solar hydrogen.” The current challenge lies in the harvesting of a larger fraction of electromagnetic spectrum by enhancing the absorbance of electrode materials. In this context, atomically precise thin films of metal oxide semiconductors and their multilayered junctions are promising candidates to integrate high surface areas with well-defined electrode–substrate interface. Given its self-limited growth mechanism, the atomic layer deposition (ALD) technique offers a wide range of capabilities to deposit and modify materials at the nanoscale. In addition, it opens new frontiers for developing precursor chemistry that is inevitable to design new processes. Herein, the authors review the properties and potential of metal oxide thin films deposited by ALD for their application in photoelectrochemical water splitting application. The first part of the review covers the basics of ALD processes followed by a brief discussion on the electrochemistry of water splitting reaction. The second part focuses on different MO{sub x} films deposited by atomic layer deposition for water splitting applications; in this section, The authors discuss the most explored MO{sub x} semiconductors, namely, Fe{sub 2}O{sub 3}, TiO{sub 2}, WO{sub 3}, and ZnO, as active materials and refer to their application as protective coatings, conductive scaffolds, or in heterojunctions. The third part deals with the current challenges and future prospects of ALD processed MO{sub x} thin films for water splitting reactions.

  17. Polyimide (PI) films by chemical vapor deposition (CVD): Novel design, experiments and characterization

    OpenAIRE

    Puig-Pey González, Jaime; Lamure, Alain; Senocq, François

    2007-01-01

    International audience Polyimide (PI) has been deposited by chemical vapor deposition (CVD) under vacuum over the past 20 years. In the early nineties, studies, experiences and characterization were mostly studied as depositions from the co-evaporation of the dianhydride and diamine monomers. Later on, several studies about its different applications due to its interesting mechanical and electrical properties enhanced its development. Nowadays, not many researches around PI deposition are ...

  18. Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

    KAUST Repository

    Roelofs, Katherine E.

    2013-03-21

    Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

  19. Inhomogeneous Chemical Evolution of the Galaxy in the Solar Neighbourhood

    Indian Academy of Sciences (India)

    S. Sahijpal

    2013-12-01

    -body numerical simulations of an inhomogeneous Galactic Chemical Evolution (GCE) of the solar neighbourhood with a high temporal resolution are presented. The solar annular ring is divided into distinct spatial grids of area ∼ 1–2 kpc2. Each grid evolves distinctly in terms of star formation and nucleosynthetic yields from numerous generations of stars. The evolution of the galaxy is simulated by considering discrete episodes of star formation. Subsequent to the evolution of the simulated stars within each grid the stellar nucleosynthetic yields are homogenized within the grid rather than the traditionally adopted criteria of homogenizing over the entire solar annular ring. This provides a natural mechanism of generating heterogeneities in the elemental abundance distribution of stars. A complex chemical evolutionary history is inferred that registers episodes of time-dependent contributions from SN II+Ib/c with respect to SN Ia. It was observed that heterogeneities can remerge even after episodes of large scale homogenizations on scales larger than the grid size. However, a comparison of the deduced heterogeneities with the observed scatter in the elemental abundances of the dwarf stars suggest only a partial match, specifically, for [Fe/H] > -0.5. The deduced heterogeneities in the case of carbon, oxygen, magnesium, silicon, sulphur, calcium and titanium can explain the observed heterogeneities for [Fe/H] < -0.5. It may not be possible to explain the entire observed spread exclusively on the basis of the inhomogeneous GCE.

  20. Conversion of Concentrated Solar Thermal Energy into Chemical Energy

    Energy Technology Data Exchange (ETDEWEB)

    Tamaura, Yutaka (Dept. of Chemistry, Science and Engineering, Tokyo Inst. of Technology, Meguro-ku, Tokyo (Japan)), E-mail: ytamaura@chem.titech.ac.jp

    2012-03-15

    When a concentrated solar beam is irradiated to the ceramics such as Ni-ferrite, the high-energy flux in the range of 1500-2500 kW/m2 is absorbed by an excess Frenkel defect formation. This non-equilibrium state defect is generated not by heating at a low heating-rate (30 K/min), but by irradiating high flux energy of concentrated solar beam rapidly at a high heating rate (200 K/min). The defect can be spontaneously converted to chemical energy of a cation-excess spinel structure (reduced-oxide form) at the temperature around 1773 K. Thus, the O{sub 2} releasing reaction (alpha-O{sub 2} releasing reaction) proceeds in two-steps; (1) high flux energy of concentrated solar beam absorption by formation of the non-equilibrium Frenkel defect and (2) the O{sub 2} gas formation from the O2- in the Frenkel defect even in air atmosphere. The 2nd step proceeds without the solar radiation. We may say that the 1st step is light reaction, and 2nd step, dark reaction, just like in photosynthesis process

  1. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    Science.gov (United States)

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

  2. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    Science.gov (United States)

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers. PMID:27479495

  3. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Mokurala, Krishnaiah; Baranowski, Lauryn L.; de Souza Lucas, Francisco W.; Siol, Sebastian; van Hest, Maikel F. A. M.; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

  4. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  5. Fabrication of CdTe solar cells by laser-driven physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bhat, A.; Tabory, C.; Liu, S.; Nguyen, M.; Aydinli, A.; Tsien, L.H.; Bohn, R.G. (Toledo Univ., OH (USA). Dept. of Physics and Astronomy)

    1991-05-01

    Polycrystalline cadmium sulfide-cadmium telluride heterojunction solar cells were fabricated for the first time using a laser-driven physical vapor deposition method. An XeCl excimer laser was used to deposit both of the II-VI semiconductor layers in a single vacuum chamber from pressed powder targets. Results are presented from optical absorption. Raman scattering, X-ray diffraction, and electrical characterization of the films. Solar cells were fabricated by deposition onto SnO{sub 2}-coated glass with top contacts produced by gold evaporation. Device performance was evaluated from the spectral quantum efficiency and current-voltage measurements in the dark and with air mass 1.5 solar illumination. (orig.).

  6. Kinematic and chemical components in the solar neighbourhood

    Directory of Open Access Journals (Sweden)

    Navarro J.F.

    2012-02-01

    Full Text Available Abundance data on solar neighbourhood stars suggest the presence of chemically-distinct stellar components in the solar neighbourhood. When the abundances of Fe, α elements, and the r-process element Eu are considered together, stars separate neatly into two groups that delineate the thin and thick disk components of the Milky Way. The group akin to the thin disk is traced by stars of relatively high Fe content and low [α/Fe] ratios. The thick disk-like group overlaps the thin disk in [Fe/H] but has higher abundances of α elements and Eu. Fe-poor stars with low [α/Fe] ratios, however, seem to belong to a separate, dynamically-cold, non-rotating component likely associated with debris from past accretion events. The kinematically-hot stellar halo dominates the sample at the metal-poor end. These results suggest that it may be possible to define the main dynamical components of the solar neighbourhood using only their chemistry, an approach with a number of interesting consequences. For example, the average rotation speed and velocity dispersion of thin disk stars is roughly independent of metallicity, a result unexpected in most current theories of thin-disk formation. In this scenario, the familiar increase in the velocity dispersion of disk stars with decreasing metallicity is the result of the increasing prevalence of the thick disk at lower metallicities, rather than of the sustained operation of a dynamical heating mechanism. The substantial overlap in [Fe/H] and, likely, stellar age, of the various components might affect other reported trends in the properties of stars in the solar neighbourhood. A purely chemical characterization of these components allows the use of their kinematics to assess their origin, an powerful approach denied to traditional ways of apportioning stars to the various Galactic components.

  7. The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mikolášek, Miroslav, E-mail: miroslav.mikolasek@stuba.sk [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Nemec, Michal; Kováč, Jaroslav [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Foti, Marina; Gerardi, Cosimo [IMS-R and D, STMicroelectronics, Stradale Primosole, 50, 95121 Catania (Italy); Mannino, Giovanni; Valenti, Luca; Lombardo, Salvatore [CNR-IMM, Zona Industriale, Ottava Strada, 5, 95121 Catania (Italy)

    2014-11-15

    Highlights: • We studied the impact of the thermal annealing on the silicon heterojunction solar cells. • Compared were samples deposited by ICP-CVD and PE-CVD methods. • Annealing up to 250 °C improves output performance of both solar cells. • Annealing above 250 °C increases defect states density at the interface and in the amorphous emitter. • Samples deposited by ICP-CVD shows better resistance against annealing. - Abstract: This paper presents a comparative study of the influence of post-deposition annealing on amorphous silicon/crystalline silicon heterojunction solar cells deposited by ICP-CVD and PE-CVD techniques. Two major effects on the solar cell efficiency occur caused by thermal annealing. The first effect is a slight improvement of the performance on annealing up to 250 °C. The second effect, for annealing temperatures above 250 °C, reveals deterioration of the solar cell performance. It is suggested that both effects are related to thermally activated diffusion of hydrogen. For low annealing temperatures, diffusion of weakly bonded hydrogen allows to passivate the defects in the amorphous emitter and at the heterointerface. In the high temperature annealing region, outdiffusion of hydrogen is assumed to be responsible for an increase of defect states in the structures. The results indicate a better stability after high temperature treatment for the sample prepared by ICP-CVD technology.

  8. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Energy Technology Data Exchange (ETDEWEB)

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  9. CdTeO3 Deposited Mesoporous NiO Photocathode for a Solar Cell

    OpenAIRE

    Chuan Zhao; Xiaoping Zou; Sheng He

    2014-01-01

    Semiconductor sensitized NiO photocathodes have been fabricated by successive ionic layer adsorption and reaction (SILAR) method depositing CdTeO3 quantum dots onto mesoscopic NiO films. A solar cell using CdTeO3 deposited NiO mesoporous photocathode has been fabricated. It yields a photovoltage of 103.7 mV and a short-circuit current density of 0.364 mA/cm2. The incident photon to current conversion efficiency (IPCE) value is found to be 12% for the newly designed NiO/CdTeO3 solar cell. It s...

  10. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  11. Microcrystalline silicon from very high frequency plasma deposition and hot-wire CVD for ``micromorph`` tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brummack, H.; Brueggemann, R.; Wanka, H.N.; Hierzenberger, A.; Schubert, M.B. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

    1997-12-31

    The authors have grown microcrystalline silicon from a glow discharge at very high frequencies of 55 MHz and 170 MHz with high hydrogen dilution, and also, at more than 10 times higher growth rates, similar films by hot-wire chemical vapor deposition. Both kinds of materials have extensively been characterized and compared in terms of structural, optical and electronic properties, which greatly improve by deposition in a multi- instead of a single-chamber system. Incorporation of these different materials into pin solar cells results in open circuit voltages of about 400 mV as long as the doped layers are microcrystalline and rise to more than 870 mV if amorphous p- and n-layers are used. Quantum efficiencies and fill factors are still poor but leave room for further improvement, as clearly demonstrated by a remarkable reverse bias quantum efficiency gain.

  12. Metallization on FDM Parts Using the Chemical Deposition Technique

    Directory of Open Access Journals (Sweden)

    Azhar Equbal

    2014-08-01

    Full Text Available Metallization of ABS (acrylonitrile-butadiene-styrene parts has been studied on flat part surfaces. These parts are fabricated on an FDM (fused deposition modeling machine using the layer-wise deposition principle using ABS as a part material. Electroless copper deposition on ABS parts was performed using two different surface preparation processes, namely ABS parts prepared using chromic acid for etching and ABS parts prepared using a solution mixture of sulphuric acid and hydrogen peroxide (H2SO4/H2O2 for etching. After surface preparations using these routes, copper (Cu is deposited electrolessly using four different acidic baths. The acidic baths used are 5 wt% CuSO4 (copper sulfate with 15 wt% of individual acids, namely HF (hydrofluoric acid, H2SO4 (sulphuric acid, H3PO4 (phosphoric acid and CH3COOH (acetic acid. Cu deposition under different acidic baths used for both the routes is presented and compared based on their electrical performance, scanning electron microscopy (SEM and energy dispersive X-ray spectrometry (EDS. The result shows that chromic acid etched samples show better electrical performance and Cu deposition in comparison to samples etched via H2SO4/H2O2.

  13. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    Science.gov (United States)

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  14. Chemical deposition of selenium layers for selenization of sputtered and electrodeposited Cu–Zn–Sn metallic layers for photovoltaic application

    International Nuclear Information System (INIS)

    One of the key steps for high efficiency kesterite based solar cells is the control of the growth conditions of the kesterite phase from precursors. In this work, chemical deposition was used to introduce the selenium needed for Cu–Zn–Sn selenization and Cu2ZnSnSe4 (CZTSe) synthesis. The influence of annealing time and precursor morphology based on deposition techniques (electrodeposition or sputtering) on the reaction path and kinetics of growth and degradation of kesterite phase was studied using scanning electron microscopy, X-ray diffraction and Raman characterizations. Important differences were detected between porous electrodeposited precursors and dense sputtered precursors. It was suggested that this difference comes from the morphology of the precursors, and that a control of the morphology is critical for the control of the annealing processes in CZTSe synthesis. - Highlights: • Cu–Zn–Sn metallic precursors deposited by co-sputtering and co-electrodeposition • Annealing of Cu2ZnSnSe4 (CZTSe) using chemical deposition of Se layer • Kinetics of the formation and decomposition of CZTSe • Role of the morphology and composition of precursors on the CZTSe properties

  15. Chemical deposition of selenium layers for selenization of sputtered and electrodeposited Cu–Zn–Sn metallic layers for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Delbos, Sebastien; Benmoussa, Marya; Bodeux, Romain; Gougaud, Corentin; Naghavi, Negar, E-mail: negar.naghavi@edf.fr

    2015-08-31

    One of the key steps for high efficiency kesterite based solar cells is the control of the growth conditions of the kesterite phase from precursors. In this work, chemical deposition was used to introduce the selenium needed for Cu–Zn–Sn selenization and Cu{sub 2}ZnSnSe{sub 4} (CZTSe) synthesis. The influence of annealing time and precursor morphology based on deposition techniques (electrodeposition or sputtering) on the reaction path and kinetics of growth and degradation of kesterite phase was studied using scanning electron microscopy, X-ray diffraction and Raman characterizations. Important differences were detected between porous electrodeposited precursors and dense sputtered precursors. It was suggested that this difference comes from the morphology of the precursors, and that a control of the morphology is critical for the control of the annealing processes in CZTSe synthesis. - Highlights: • Cu–Zn–Sn metallic precursors deposited by co-sputtering and co-electrodeposition • Annealing of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) using chemical deposition of Se layer • Kinetics of the formation and decomposition of CZTSe • Role of the morphology and composition of precursors on the CZTSe properties.

  16. Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    Science.gov (United States)

    Sheikholeslami, M. Z.; Jasinski, T.; Fretz, K. W.

    1988-01-01

    In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.

  17. The power source effect on SiO{sub x} coating deposition by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Junfeng [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China); Chen Qiang, E-mail: chenqiang@bigc.edu.c [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China); Zhang Yuefei; Liu Fuping; Liu Zhongwei [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China)

    2009-05-29

    SiOx coatings were prepared by capacitively coupled plasma enhanced chemical vapor deposition on polyethyleneterephtalate substrates in 23 kHz middle-frequency and radio frequency power supplies, respectively, where hexamethyldisiloxane was used as gas source. The influences of discharge conditions on gas phase intermediate species and active radicals for SiOx formation was investigated by mass spectrometry as real-time in-situ diagnosis. The deposited SiOx coating chemical structures were also analyzed by Fourier transform infrared spectroscopy. Meanwhile, the film barrier property, oxygen transmission rate, was measured at 23 {sup o}C and 50% humidity circumstance. The better barrier property was obtained in the MF power source depositing SiOx coated PET.

  18. Fabrication of Isotropic Pyrocarbon at 1400℃ by Thermal Gradient Chemical Vapor Deposition Apparatus

    Institute of Scientific and Technical Information of China (English)

    GUO Lingjun; ZHANG Dongsheng; LI Kezhi; LI Hejun

    2009-01-01

    An experiment was designed to prepare isotropic pyrocarbon by thermal gradient chemical vapor deposition apparatus.The deposition was performed under ambient atmosphere at 1400℃,with natural gas volume flow of 3.5 m~3/h for 80 h.The results show that the thickness and the bulk density of the deposit are about 1.95 g/cm~3 and 10 mm,respectively.The microstructure of the deposit was examined by polarized light microscopy and scanning electron microscopy,which shows that the deposit is constituted of sphere isotropic pyrocarbon,pebble pyrocarbon and laminar pyrocarbon.

  19. Spectral response of CdS/CdTe solar cells obtained with different S/Cd ratios for the CdS chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O.; Sastre-Hernandez, J.; Contreras-Puente, G.; Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico D. F. (Mexico); Arias-Carbajal, A. [Facultad de Quimica, IMRE, Universidad de La Habana, 10400 La Habana (Cuba); Mendoza-Perez, R. [Universidad Autonoma de la Ciudad de Mexico, 09970 Mexico, D. F. (Mexico); Santana, G. [Instituto de Investigacion en Materiales, UNAM, 04510 Mexico, D. F. (Mexico); Morales-Acevedo, A. [Departamento de Ingenieria Electrica, CINVESTAV-IPN, 07360 Mexico, D. F. (Mexico)

    2006-09-22

    In this work, the influence of the variation of chemical bath thiourea concentration in the solution for depositing CdS layers upon the spectral response of chemical bath deposition (CBD)-CdS/CdTe solar cells is studied. Although changes in the short and long wavelength range for the spectral response of the cells were observed in dependence of the thiourea concentration, no significant changes were observed in the diffusion length of minority carriers in the CdTe layer, as determined from the constant photocurrent method, when the thiourea concentration is increased in the CdS deposition solution. (author)

  20. Effect of deposition pressure on the properties of magnetron-sputter-deposited molybdenum back contacts for CIGS solar cells

    Science.gov (United States)

    Li, Weimin; Yan, Xia; Aberle, Armin G.; Venkataraj, Selvaraj

    2015-08-01

    Molybdenum (Mo) thin films were deposited onto soda-lime glass substrates by DC magnetron sputtering of a Mo target at various chamber pressures ranging from 1.5 × 10-3 to 7.5 × 10-3 mbar. The film properties were analysed with regards to their application as back electrode in copper indium gallium diselenide (CIGS) solar cells. It is observed that the resulting film morphology and microstructure were strongly affected by deposition pressure. Mo films deposited at a low pressure possess a high density and a low sheet resistance. These films also have a compact microstructure and a compressive strain, which lead to poor adhesion. The adhesion can be improved by increasing the chamber pressure, which has negative effects on the sheet resistance, optical reflection and porosity of the films. On the basis of these results, a method has been established to fabricate low-resistivity Mo films on soda-lime glass with very good adhesion for CIGS solar cell applications.

  1. Low pressure chemical vapor deposition of niobium coating on silicon carbide

    International Nuclear Information System (INIS)

    Nb coatings were prepared on a SiC substrate by low pressure chemical vapor deposition using NbCl5. Thermodynamic calculations were performed to study the effect of temperature and partial pressure of NbCl5 on the final products. The as-deposited coatings were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy. The Nb coatings are oriented and grow in the preferred (2 0 0) plane and (2 1 1) plane, at 1173 K and 1223-1423 K, respectively. At 1123-1273 K, the deposition is controlled by the surface kinetic processes. The activation energy is found to be 133 kJ/mol. At 1273-1373 K, the deposition is controlled by the mass transport processes. The activation energy is found to be 46 kJ/mol. The growth mechanism of the chemical vapor deposited Nb is also discussed based on the morphologies and the deposition rates.

  2. Solar Flux Deposition And Heating Rates In Jupiter's Atmosphere

    Science.gov (United States)

    Perez-Hoyos, Santiago; Sánchez-Lavega, A.

    2009-09-01

    We discuss here the solar downward net flux in the 0.25 - 2.5 µm range in the atmosphere of Jupiter and the associated heating rates under a number of vertical cloud structure scenarios focusing in the effect of clouds and hazes. Our numerical model is based in the doubling-adding technique to solve the radiative transfer equation and it includes gas absorption by CH4, NH3 and H2, in addition to Rayleigh scattering by a mixture of H2 plus He. Four paradigmatic Jovian regions have been considered (hot-spots, belts, zones and Polar Regions). The hot-spots are the most transparent regions with downward net fluxes of 2.5±0.5 Wm-2 at the 6 bar level. The maximum solar heating is 0.04±0.01 K/day and occurs above 1 bar. Belts and zones characterization result in a maximum net downward flux of 0.5 Wm-2 at 2 bar and 0.015 Wm-2 at 6 bar. Heating is concentrated in the stratospheric and tropospheric hazes. Finally, Polar Regions are also explored and the results point to a considerable stratospheric heating of 0.04±0.02 K/day. In all, these calculations suggest that the role of the direct solar forcing in the Jovian atmospheric dynamics is limited to the upper 1 - 2 bar of the atmosphere except in the hot-spot areas. Acknowledgments: This work has been funded by Spanish MEC AYA2006-07735 with FEDER support and Grupos Gobierno Vasco IT-464-07.

  3. PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    M. Hofmann

    2008-01-01

    Full Text Available A novel plasma-enhanced chemical vapour deposited (PECVD stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing and below 30 cm/s (after forming gas anneal were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.

  4. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    Science.gov (United States)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  5. CdTe-based solar cells prepared by physical vapor deposition and close-spaced sublimation methods

    International Nuclear Information System (INIS)

    Full text : In the photovoltaic material family, cadmium telluride is regarded as one of the most promising material for fabrication of high efficiency polycrystalline CdTe/CdS thin film solar cells because of its near-optimum band gap of about 1.46 eV and high optical absorption coefficient in visible range. The maximum efficiency of about 16.5 percent of the laboratory samples of polycrystalline CdTe based thin film solar cells was achieved by using nanostructured CdS:O window layer and the modified device structure. In spite of the large lattice mismatch between cubic CdTe and hexagonal CdS (nearly 9.7 percent) the CdTe/CdS solar cells are characterized by essentially high efficiencies caused by interdiffusion at the junction interface removing the lattice mismatch. To identify the structural mechanisms leading to the solar cell efficiency increase we have studied the effect of CdCl2 treatment on the output parameters of CdS/CdTe-based solar cells and crystal structure of the base layers deposited on glass substrates by different ways. In the first way both of CdS and CdTe layers were deposited by physical vapor deposition (PVD) method meanwhile in the second way the chemical bath deposition (CBD) and close-spaced sublimation (CSS) methods were used for CdS and CdTe films deposition, respectively. For the PVD structures. The average grain size of the film increases from 1 μm to 4 μm due to the lattice strain caused by macrodeformations and stacking faults. The maximum efficiency (ηA=10.3 percent) of solar cells on the basis of cadmium telluride layers deposited by PVD method corresponds to 0,35 μm CdRl2 thickness at CdCl2 treatment. CBD/CSS samples were exposed to CdCl2 vapor at 400 degrees Celsium for 5-7 min in vacuum chamber in the presence of 100 torr oxygen and 400 torr helium. As-grown CdTe films were characterized by clearly faceted surface morphology and an average grain size of about 3-4 μm. Unlike the thermally evaporated CdTe films, no

  6. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  7. Hydrazine-Free Solution-Deposited CuIn(S,Se)2 Solar Cells by Spray Deposition of Metal Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Arnou, Panagiota; van Hest, Maikel F. A. M.; Cooper, Carl S.; Malkov, Andrei V.; Walls, John M.; Bowers, Jake W.

    2016-05-18

    Solution processing of semiconductors, such as CuInSe2 and its alloys (CIGS), can significantly reduce the manufacturing costs of thin film solar cells. Despite the recent success of solution deposition approaches for CIGS, toxic reagents such as hydrazine are usually involved, which introduce health and safety concerns. Here, we present a simple and safer methodology for the preparation of high-quality CuIn(S, Se)2 absorbers from metal sulfide solutions in a diamine/dithiol mixture. The solutions are sprayed in air, using a chromatography atomizer, followed by a postdeposition selenization step. Two different selenization methods are explored resulting in power conversion efficiencies of up to 8%.

  8. Chemical vapour deposition of vanadium oxide thermochromic thin films

    OpenAIRE

    Piccirillo, Clara

    2012-01-01

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thi...

  9. V2O5 thin film deposition for application in organic solar cells

    Science.gov (United States)

    Arbab, Elhadi A. A.; Mola, Genene Tessema

    2016-04-01

    Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

  10. Chemical Vapour Deposition of Graphene with Re-useable Pt and Cu substrates for Flexible Electronics

    Science.gov (United States)

    Karamat, Shumaila; Sonusen, Selda; Celik, Umit; Uysalli, Yigit; Oral, Ahmet

    2015-03-01

    Graphene has gained the attention of scientific world due to its outstanding physical properties. The future demand of flexible electronics such as solar cells, light emitting diodes, photo-detectors and touch screen technology requires more exploration of graphene properties on flexible substrates. The most interesting application of graphene is in organic light emitting diodes (OLED) where efforts are in progress to replace brittle indium tin oxide (ITO) electrode with a flexible graphene electrode because ITO raw materials are becoming increasingly expensive, and its brittle nature makes it unsuitable for flexible devices. In this work, we grow graphene on Pt and Cu substrates using chemical vapour deposition (CVD) and transferred it to a polymer material (PVA) using lamination technique. We used hydrogen bubbling method for separating graphene from Pt and Cu catalyst to reuse the substrates many times. After successful transfer of graphene on polymer samples, we checked the resistivity values of the graphene sheet which varies with growth conditions. Furthermore, Raman, atomic force microscopy (AFM), I-V and Force-displacement measurements will be presented for these samples.

  11. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    International Nuclear Information System (INIS)

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/min were obtained. The reaction kinetics were studied and detailed process modeling based on a reaction mechanism that includes the formation of an alkylzinc alkoxide intermediate product is discussed. This mechanism can explain the temperature dependent variety in deposition profiles observed in the static deposition experiments. The capability of modeling to gain insight in the local process conditions inside a reactor is demonstrated. - Highlights: • ZnO deposition at high rates of 800 nm/min • Modeling based on two step mechanism gives good fit. • Modeling gives insight in the inside of the reactor. • Modeling can even predict static deposition profiles

  12. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  13. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor depositionDeposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  14. Graphene growth with giant domains using chemical vapor deposition

    OpenAIRE

    Yong, Virginia; Hahn, H. Thomas

    2011-01-01

    We report the first demonstration of the growth of giant graphene domains on platinum (Pt), which results in a uniform bilayer graphene film with domain sizes of millimetre scale. These giant graphene domains are attributed to the giant Pt grains attained in post-deposition annealed Pt thin films that exhibit a strong dependency on the Pt film thickness. Giant grains have been claimed to occur in other metallic materials under appropriate film thicknesses and processing conditions. Our findin...

  15. Chemical vapor deposition of silicon carbide for large area mirrors

    Science.gov (United States)

    Gentilman, R. L.; Maguire, E. A.

    1982-05-01

    CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/alpha ratio and its ability to be super-polished to less than or equal to 10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.

  16. Metal organic chemical vapor deposition of environmental barrier coatings for the inhibition of solid deposit formation from heated jet fuel

    Science.gov (United States)

    Mohan, Arun Ram

    Solid deposit formation from jet fuel compromises the fuel handling system of an aviation turbine engine and increases the maintenance downtime of an aircraft. The deposit formation process depends upon the composition of the fuel, the nature of metal surfaces that come in contact with the heated fuel and the operating conditions of the engine. The objective of the study is to investigate the effect of substrate surfaces on the amount and nature of solid deposits in the intermediate regime where both autoxidation and pyrolysis play an important role in deposit formation. A particular focus has been directed to examining the effectiveness of barrier coatings produced by metal organic chemical vapor deposition (MOCVD) on metal surfaces for inhibiting the solid deposit formation from jet fuel degradation. In the first part of the experimental study, a commercial Jet-A sample was stressed in a flow reactor on seven different metal surfaces: AISI316, AISI 321, AISI 304, AISI 347, Inconel 600, Inconel 718, Inconel 750X and FecrAlloy. Examination of deposits by thermal and microscopic analysis shows that the solid deposit formation is influenced by the interaction of organosulfur compounds and autoxidation products with the metal surfaces. The nature of metal sulfides was predicted by Fe-Ni-S ternary phase diagram. Thermal stressing on uncoated surfaces produced coke deposits with varying degree of structural order. They are hydrogen-rich and structurally disordered deposits, spherulitic deposits, small carbon particles with relatively ordered structures and large platelets of ordered carbon structures formed by metal catalysis. In the second part of the study, environmental barrier coatings were deposited on tube surfaces to inhibit solid deposit formation from the heated fuel. A new CVD system was configured by the proper choice of components for mass flow, pressure and temperature control in the reactor. A bubbler was designed to deliver the precursor into the reactor

  17. Physical properties of nitrogen-doped diamond-like amorphous carbon films deposited by supermagnetron plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Diamond-like amorphous carbon films doped with nitrogen (DAC:N) were deposited on Si and glass wafers intermittently using i-C4H10/N2 repetitive supermagnetron plasma chemical vapor deposition. Deposition duration, which is equal to a plasma heating time of wafer, was selected to be 40 or 60 s, and several layers were deposited repetitively to form one thick film. DAC:N films were deposited at a lower-electrode temperature of 100 deg. C as a function of upper- and lower-electrode rf powers (200 W/200 W-1 kW/1 kW) and N2 concentration (0%-80%). With an increase in N2 concentration and rf power, the resistivity and the optical band gap decreased monotonously. With increase of the deposition duration from 40 to 60 s, resistivity decreased to 0.03Ω cm and optical band gap decreased to 0.02 eV (substantially equal to 0 eV within the range of experimental error), at an N2 concentration of 80% and rf power of 1 kW(/1 kW)

  18. Aluminium nitride coatings preparation using a chemical vapour deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Armas, B.; Combescure, C.; Icaza Herrera, M. de; Sibieude, F. [Centre National de la Recherche Scientifique (CNRS), 66 - Font-Romeu (France). Inst. de Science et du Genie des Materiaux et des Procedes

    2000-07-01

    Aluminium nitride was obtained in a cold wall reactor using AlCl{sub 3} and NH{sub 3} as precursors and N{sub 2} as a carrier gas. AlCl{sub 3} was synthesized << in situ >> by means of an original method based on the reaction of SiCl{sub 4(g)} with Al{sub (S)}. The substrate used was a cylinder of graphite coated with SiC and heated by high frequency induction. The deposition rate was studied as a function of temperature in the range 900 - 1500 C, the total pressure varying from 2 to 180 hPa. At low temperatures an Arrhenius type representation of the kinetics for several pressures indicated a thermally activated process with an apparent activation energy of about 80 kJ.mol{sup -1}. At high deposition temperatures, the deposition rate was almost constant, indicating that the growth was controlled by a diffusion process. The influence of gas composition and total AlCl{sub 3} flow rate was also discussed. The different layers were characterised particularly by means of X-ray diffraction and SEM. The influence of temperature and total pressure on crystallization and morphology was studied. (orig.)

  19. Chemical vapor deposition and characterization of titanium dioxide thin films

    Science.gov (United States)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  20. Prospects for conversion of solar energy into chemical fuels: the concept of a solar fuels industry.

    Science.gov (United States)

    Harriman, Anthony

    2013-08-13

    There is, at present, no solar fuels industry anywhere in the world despite the well-publicized needs to replace our depleting stock of fossil fuels with renewable energy sources. Many obstacles have to be overcome in order to store sunlight in the form of chemical potential, and there are severe barriers to surmount in order to produce energy on a massive scale, at a modest price and in a convenient form. It is also essential to allow for the intermittent nature of sunlight, its diffusiveness and variability and to cope with the obvious need to use large surface areas for light collection. Nonetheless, we have no alternative but to devise viable strategies for storage of sunlight as biomass or chemical feedstock. Simple alternatives, such as solar heating, are attractive in terms of quick demonstrations but are not the answer. Photo-electrochemical devices might serve as the necessary machinery by which to generate electronic charge but the main problem is to couple these charges to the multi-electron catalysis needed to drive energy-storing chemical reactions. Several potential fuels (CO, H₂, HCOOH, NH₃, O₂, speciality organics, etc.) are possible, but the photochemical reduction of CO₂ deserves particular mention because of ever-growing concerns about overproduction of greenhouse gases. The prospects for achieving these reactions under ambient conditions are considered herein.

  1. ZnS thin film deposited with chemical bath deposition process directed by different stirring speeds

    International Nuclear Information System (INIS)

    In this combined film thickness, scanning electron microscopy (SEM), X-ray diffraction and optical properties study, we explore the effects of different stirring speeds on the growth and optical properties of ZnS film deposited by CBD method. From the disclosed changes of thickness of ZnS film, we conclude that film thickness is independent of the stirring speeds in the heterogeneous process (deposition time less than 40 min), but increases with the stirring speeds and/or deposition time increasing in the homogeneous process. Grazing incident X-ray diffraction (GIXRD) and the study of optical properties disclosed that the ZnS films grown with different stirring speeds show partially crystallized film and exhibit good transmittance (70-88% in the visible region), but the stirring speeds cannot give much effects on the structure and optical properties in the homogeneous process.

  2. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    Science.gov (United States)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  3. PARTICLE COATING BY CHEMICAL VAPOR DEPOSITION IN A FLUIDI7ED BED REACTOR

    Institute of Scientific and Technical Information of China (English)

    Gregor; Czok; Joachim; Werther

    2005-01-01

    Aluminum coatings were created onto glass beads by chemical vapor deposition in a fluidized bed reactor at different temperatures. Nitrogen was enriched with Triisobutylaluminum (TIBA) vapor and the latter was thermally decomposed inside the fluidized bed to deposit the elemental aluminum. To ensure homogeneous coating on the bed material, the fluidizing conditions necessary to avoid agglomeration were investigated for a broad range of temperatures.The deposition reaction was modeled on the basis of a discrete particle simulation to gain insight into homogeneity and thickness of the coating throughout the bed material. In particular, the take-up of aluminum was traced for selected particles that exhibited a large mass of deposited aluminum.

  4. Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor

    Energy Technology Data Exchange (ETDEWEB)

    Song Xuemei; Gopireddy, Deepthi [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G. [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)], E-mail: takoudis@uic.edu

    2008-07-31

    In this study, we investigate the use of an amide-based Ti-containing precursor, namely tetrakis(diethylamido)titanium (TDEAT), for TiN{sub x}O{sub y} film deposition at low temperature. Traditionally, alkoxide-based Ti-containing precursor, such as titanium tetra-isopropoxide (TTIP), along with NH{sub 3} is used for titanium oxynitride (TiN{sub x}O{sub y}) film deposition. When TTIP is used, at low temperatures it is difficult to form TiN{sub x}O{sub y} films with high N/O ratios. In this study, by using TDEAT, TiN{sub x}O{sub y} films are deposited on H-passivated Si (100) substrates in a cold wall reactor at 300 {sup o}C and 106 Pa. Rutherford backscattering spectroscopy analysis shows nitrogen incorporation in the TiN{sub x}O{sub y} films to be as high as 28 at.%. X-ray photoelectron spectroscopy analysis of as-deposited films confirms the formation of{sub .} TiN{sub x}O{sub y}, while Fourier transform infrared and Raman spectra indicate that the films have amorphous structure. Moreover, there is no detectable bulk carbon impurity and no SiO{sub 2} formation at the TiN{sub x}O{sub y}/Si interface. Upon annealing the as-deposited films in air at 750 deg. C for 30 min, they oxidize to TiO{sub 2} and crystallize to form a rutile structure with a small amount of anatase phase. Based on these results, TDEAT appears to be a promising precursor for both TiN{sub x}O{sub y} and TiO{sub 2} film deposition.

  5. An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chu Juan [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); Jin Zhengguo, E-mail: zhgjin@tju.edu.cn [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Cai Shu [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Yang Jingxia [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Hong Zhanglian, E-mail: hong_zhanglian@zju.edu.cn [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2012-01-01

    Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV-Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm-19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.

  6. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    Science.gov (United States)

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  7. High-efficiency micromorph silicon solar cells with in-situ intermediate reflector deposited on various rough LPCVD ZnO

    OpenAIRE

    Dominé, D.; Buehlmann, P; Bailat, J.; Billet, A.; Feltrin, A.; Ballif, C.

    2008-01-01

    Light management using intermediate reflector layers (IRL) and advanced front transparent conductive oxide (TCO) morphologies is needed to rise the short-circuit current density (Jsc) of micromorph tandem solar cells above 14 mA/cm2. For micromorph cells deposited on surface-textured ZnO layers grown by low-pressure chemical vapour deposition (LPCVD), we study the interplay between the front TCO layer and the IRL and its impact on fill factor and current matching conditions. The key role of t...

  8. Fabrication and characterization of indium sulfide thin films deposited on SAMs modified substrates surfaces by chemical bath deposition

    International Nuclear Information System (INIS)

    In an effort to explore the optoelectronic properties of nanostructured indium sulfide (In2S3) thin films for a wide range of applications, the In2S3 thin films were successfully deposited on the APTS layers (-NH2-terminated) modified ITO glass substrates using the chemical bath deposition technique. The surface morphology, structure and composition of the resultant In2S3 thin films were characterized by FESEM, XRD, and XPS, respectively. Also, the correlations between the optical properties, photocurrent response and the thickness of thin films were established. According to the different deposition mechanisms on the varying SAMs terminational groups, the positive and negative micropatterned In2S3 thin films were successfully fabricated on modified Si substrates surface combining with the ultraviolet lithography process. This offers an attractive opportunity to fabricate patterned In2S3 thin films for controlling the spatial positioning of functional materials in microsystems.

  9. Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Meier, J.; Kroll, U.; Spitznagel, J. [Unaxis SPTec, Neuchatel (Switzerland); Vallat-Sauvain, E.; Graf, U.; Shah, A. [Institut de Microtechnique, Neuchatel (Switzerland)

    2004-12-01

    During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called 'very high frequency glow discharge (VHF-GD)' technique, a method that leads to a considerable enhancement in the deposition rate of amorphous and microcrystalline silicon layers. As a direct consequence of reduced plasma impedances at higher plasma excitation frequencies, silane dissociation is enhanced and the maximum energy of ions bombarding the growing surface is reduced. Due to softer ion bombardment on the growing surface, the VHF process also favours the formation of microcrystalline silicon. Based on these beneficial properties of VHF plasmas, for the growth of thin silicon films, plasma excitation frequencies f{sub exc} in the range 30-300 MHz, i.e. clearly higher than the standard 13.56 MHz, are indeed scheduled to play an important role in future production equipment. (2) In 1994, IMT pioneered a novel thin-film solar cell, the microcrystalline silicon solar cell. This new type of thin-film absorber material - a form of crystalline silicon - opens up the way for a new concept, the so-called 'micromorph' tandem solar cell concept. This term stands for the combination of a microcrystalline silicon bottom cell and an amorphous silicon top cell. Thanks to the lower band gap and to the stability of microcrystalline silicon solar cells, a better use of the full solar spectrum is possible, leading, thereby, to higher efficiencies than those obtained with solar cells based solely on amorphous silicon. Both the VHF-GD deposition technique and the 'micromorph' tandem solar cell concept are considered to be essential for future thin-film PV modules, as they bear the potential for combining high-efficiency devices with low-cost manufacturing processes. (author)

  10. Highly oriented polycrystalline Cu2O film formation using RF magnetron sputtering deposition for solar cells

    Science.gov (United States)

    Noda, S.; Shima, H.; Akinaga, H.

    2014-02-01

    Room temperature sputtering deposition and re-crystallization of the deposited thin films by rapid thermal annealing have been evaluating in detail as a formation method of Cu2O active layer for solar cells, which minimize thermal budget in fabrication processes. Single phase polycrystalline Cu2O films were obtained by a magnetron rf sputtering deposition and its crystallinity and electrical characteristics were controlled by the annealing. Hall mobility was improved up to 17 cm2V-1s-1 by the annealing at 600°C for 30s. Since this value was smaller than 47 cm2V-1s-1 of the film deposited under thermal equilibrium state using pulsed laser deposition at 600°C, some contrivances were necessary to compensate the deficiency. It was understood that the sputter-deposited Cu2O films on (111)-oriented Pt films were strongly oriented to (111) face also by the self-assembly and the crystallinity was improved by the annealing preserving its orientation. The sputter-deposited film quality was expected to become equivalent to the pulsed laser deposition film from the results of X-ray diffractometry and photoluminescence.

  11. Effect of Thermal Annealing on the Band GAP and Optical Properties of Chemical Bath Deposited ZnSe Thin Films

    Science.gov (United States)

    Ezema, F. I.; Ekwealor, A. B. C.; Osuji, R. U.

    2006-05-01

    Zinc selenide (ZnSe) thin films were deposited on glass substrate using the chemical bath deposition method at room temperature from aqueous solutions of zinc sulphate and sodium selenosulfate in which sodium hydroxide was employed as complexing agents. The `as-deposited' ZnSe thin films are red in color and annealed in oven at 473 K for 1 hour and on a hot plate in open air at 333 K for 5 minutes, affecting the morphological and optical properties. Optical properties such as absorption coefficient a and extinction coefficient k, were determined using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. The films have transmittance in VIS-NIR regions that range between 26 and 87%. From absorbance and transmittance spectra, the band gap energy determined ranged between 1.60 eV and 1.75 for the `as deposited' samples, and the annealed samples exhibited a band gap shift of 0.15 eV. The high transmittance of the films together with its large band gap made them good materials for selective coatings for solar cells.

  12. Role of the conducting layer substrate on TiO2 nucleation when using microwave activated chemical bath deposition

    Science.gov (United States)

    Zumeta, I.; Espinosa, R.; Ayllón, J. A.; Vigil, E.

    2002-12-01

    Nanostructured TiO2 is used in novel dye sensitized solar cells. Because of their interaction with light, thin TiO2 films are also used as coatings for self-cleaning glasses and tiles. Microwave activated chemical bath deposition represents a simple and cost-effective way to obtain nanostructured TiO2 films. It is important to study, in this technique, the role of the conducting layer used as the substrate. The influence of microwave-substrate interactions on TiO2 deposition is analysed using different substrate positions, employing substrates with different conductivities, and also using different microwave radiation powers for film deposition. We prove that a common domestic microwave oven with a large cavity and inhomogeneous radiation field can be used with equally satisfactory results. The transmittance spectra of the obtained films were studied and used to analyse film thickness and to obtain gap energy values. The results, regarding different indium-tin oxide resistivities and different substrate positions in the oven cavity, show that the interaction of the microwave field with the conducting layer is determinant in layer deposition. It has also been found that film thickness increases with the power of the applied radiation while the gap energies of the TiO2 films decrease approaching the 3.2 eV value reported for bulk anatase. This indicates that these films are not crystalline and it agrees with x-ray spectra that do not reveal any peak.

  13. Impact of nanocrystal spray deposition on inorganic solar cells.

    Science.gov (United States)

    Townsend, Troy K; Yoon, Woojun; Foos, Edward E; Tischler, Joseph G

    2014-05-28

    Solution-synthesized inorganic cadmium telluride nanocrystals (∼4 nm; 1.45 eV band gap) are attractive elements for the fabrication of thin-film-based low-cost photovoltaic (PV) devices. Their encapsulating organic ligand shell enables them to be easily dissolved in organic solvents, and the resulting solutions can be spray-cast onto indium-tin oxide (ITO)-coated glass under ambient conditions to produce photoactive thin films of CdTe. Following annealing at 380 °C in the presence of CdCl2(s) and evaporation of metal electrode contacts (glass/ITO/CdTe/Ca/Al), Schottky-junction PV devices were tested under simulated 1 sun conditions. An improved PV performance was found to be directly tied to control over the film morphology obtained by the adjustment of spray parameters such as the solution concentration, delivery pressure, substrate distance, and surface temperature. Higher spray pressures produced thinner layers (CdTe spray deposition was then applied to heterojunction devices (ITO/CdTe/ZnO/Al) to reach 3.0% efficiency after light soaking under forward bias. The film thickness, surface morphology, and light absorption were examined with scanning electron microscopy, optical profilometry, and UV/vis spectroscopy. PMID:24755091

  14. Comparison of optical coatings deposited by novel physical and chemical techniques

    International Nuclear Information System (INIS)

    The authors have undertaken a systematic study of various methods of depositing good quality thin films of optically interesting materials by different physical and chemical methods in an effort to identify promising techniques for producing low-absorbing, low-scatter, high damage-threshold coatings. The deposition methods studied include e-beam deposition in a UHV environment, sol-gel processes utilizing hot isostatic pressing (HIP) to densify the films, photochemical deposition using organometallic reagents entrained in inert or potentially reactive gas flows, and ion-beam deposition in a reactive environment. The deposited single-layer films were analyzed using various surface analysis techniques to provide information on film composition, stoichiometry, and impurity level

  15. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  16. Two dimensional transition metal dichalcogenides grown by chemical vapor deposition

    OpenAIRE

    Tsang, Ka-yi; 曾家懿

    2014-01-01

    An atomically thin film of semiconducting transition metal dichalcogenides (TMDCs) is emerging as a class of key materials in chemistry and physics due to their remarkable chemical and electronic properties. The TMDCs are layered materials with weak out-of-plane van der Waals (vdW) interaction and strong in-plane covalent bonding enabling scalable exfoliation into two-dimensional (2D) layers of atomic thickness. The growth techniques to prepare these 2D TMDC materials in high yield and large ...

  17. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    Science.gov (United States)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  18. Poly(3-hexylthiophene) films by electrospray deposition for crystalline silicon/organic hybrid junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hiate, Taiga; Miyauchi, Naoto; Tang, Zeguo; Ishikawa, Ryo; Ueno, Keiji; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 858-3676 (Japan)

    2012-10-15

    The electrospray deposition (ESD) of poly(3-hexylthiophene) (P3HT) and conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on P3HT for use in crystalline silicon/organic hybrid heterojunction solar cells on CZ crystalline silicon (c-Si) (100) wafer was investigated using real-time characterization by spectroscopic ellipsometry (SE). In contrast to the nonuniform deposition of products frequently obtained by conventional spin-coating, a uniform deposition of P3HT and PEDOT:PSS films were achieved on flat and textured hydrophobic c-Si(100) wafers by adjusting the deposition conditions. The c-Si/P3HT/PEDOT:PSS heterojunction solar cells exhibited efficiencies of 4.1 and 6.3% on flat and textured c-Si(100) wafers, respectively. These findings suggest that ESD is a promising method for the uniform deposition of P3HT and PEDOT:PSS films on flat and textured hydrophobic substrates. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Chemical Weathering of New Pyroclastic Deposits from Mt. Merapi (Java), Indonesia

    Energy Technology Data Exchange (ETDEWEB)

    Fiantis, Dian; Nelson, Malik; Van Ranst, Eric; Shamshudin, Josup; Qafoku, Nikolla

    2009-09-01

    Java Island, Indonesia with abundant amount of pyroclastic deposits is located in the very active and dynamic Pacific Ring of Fires. Studying the geochemical weathering indices of these pyroclastic deposits is important to get a clear picture about weathering profiles on deposits resulting from the eruption of Mt. Merapi. Immediately after the first phase of the eruption (March to June 2006), moist and leached pyroclastic deposits were collected. These pyroclastic deposits were found to be composed of volcanic glass, plagioclase feldspar in various proportions, orthopyroxene, clinopyroxene, olivine, amphibole, and titanomagnetite. Total elemental composition of the bulk samples (including trace elements and heavy metals) were determined by wet chemical methods and X-ray fluorescence (XRF) analyses. Weathering of the pyroclastic deposits was studied using various weathering indices. The Ruxton ratio, weathering index of Parker, Vought resudual index and chemical index of weathering of moist pyroclastic are lower than the leached sample but the alteration indices (chemical and plagioclase) are slightly higher in the moist compared to the leached pyroclastic deposits.

  20. Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid

    Indian Academy of Sciences (India)

    A Mefoued; M Fathi; J Bhatt; A Messaoud; B Palahouane; N Benrekaa

    2011-12-01

    In this study, we have improved electrical characteristics such as the efficiency () and the fill factor (FF) of finished multicrystalline silicon (-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These -Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on -type -Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

  1. (Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells

    KAUST Repository

    Tétreault, Nicolas

    2011-01-01

    Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al 2O 3, ZnO, SnO 2, Nb 2O 5, HfO 2, Ga 2O 3 and TiO 2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy. ©The Electrochemical Society.

  2. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    Science.gov (United States)

    Liu, Y.

    2010-02-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modules on a plastic substrate. The first objective includes the development of suitable ZnO:Al TCO for nc Si:H single junction solar cells, fabrication of the aimed micromorph tandem solar cells on glass, and finally the optimization of the nc-Si:H i-layer for the depositions afterwards on Al foil. Chapter 3 addresses the improvement of texture etching of ZnO:Al by studying the HCl etching effect on ZnO:Al films sputter-deposited in a set substrate heater temperature series. With the texture-etched ZnO:Al front TCO, a single junction nc-Si:H solar cell was deposited with an initial efficiency of 8.33%. Chapter 4 starts with studying the light soaking and annealing effects on micromorph tandem solar cell. In the end, a highly stabilized bottom cell current limited tandem cell was made. The tandem shows an initial efficiency of 10.2%, and degraded only 6.9% after 1600 h of light soaking. In Chapter 5, the nc-Si:H i-layers were studied in 3 pressure and inter-electrode distance series. The correlations between plasma physics and the consequent i-layers’ properties are investigated. We show that the Raman crystalline ratio and porosity of the nc-Si:H layer have an interesting relation with the p•d product. By varying p and d, device quality nc-Si:H layer can be deposited at a high rate of 0.6 nm/s. These results in fact are a very important step for the second objective. The second objective is covered by the entire Chapter 6. All silicon layers are deposited on special aluminum

  3. Atmospheric and Aqueous Deposition of Polycrystalline Metal Oxides Using Mist-CVD for Highly Efficient Inverted Polymer Solar Cells.

    Science.gov (United States)

    Zhu, Xiaodan; Kawaharamura, Toshiyuki; Stieg, Adam Z; Biswas, Chandan; Li, Lu; Ma, Zhu; Zurbuchen, Mark A; Pei, Qibing; Wang, Kang L

    2015-08-12

    Large scale, cost-effective processing of metal oxide thin films is critical for the fabrication of many novel thin film electronics. To date, however, most of the reported solution-based techniques require either extended thermal anneals or additional synthetic steps. Here we report mist chemical vapor deposition as a solution-based, readily scalable, and open-air method to produce high-quality polycrystalline metal oxide thin films. Continuous, smooth, and conformal deposition of metal oxide thin films is achieved by tuning the solvent chemistry of Leidenfrost droplets to promote finer control over the surface-local dissociation process of the atomized zinc-bearing precursors. We demonstrate the deposited ZnO as highly efficient electron transport layers for inverted polymer solar cells to show the power of the approach. A highest efficiency of 8.7% is achieved with a fill factor of 73%, comparable to that of conventional so-gel ZnO, which serves as an indication of the efficient vertical transport and electron collection achievable using this material. PMID:26146797

  4. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    OpenAIRE

    Liu, Y

    2010-01-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modu...

  5. Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique

    OpenAIRE

    Meier, Johannes; Kroll, U.; Vallat-Sauvain, Evelyne; Spitznagel, J.; U. Graf; Shah, Arvind

    2008-01-01

    During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called “very high frequency glow discharge (VHF-GD)” technique, a method that leads to a considerable enhancement in the deposition rate of amorphous and microcrystalline silicon layers. As a direct consequence of reduced plasma impedances at higher plasma excitation frequencies, silane dis...

  6. Metastable phase formation during chemical vapor deposition of niobium-germanium films

    International Nuclear Information System (INIS)

    Regularities of different metastable phase formation during chemical vapor deposition of niobium-germanium coatings were investigated. These coatings were deposited on wire and band metal substrates by method of chemical transport reactions with the use of iodine as transporting agent. It was shown that it was possible to deposite the metastable Nb5Ge3 phase with structure of T2 type and X phase with cubic structure and hypothetical Nb2Ge composition during iodide process using Nb3Ge alloy as initial material together with phases existing at state diagram. Metastable T2 and X phases are formed only at high total pressure (more 250-500 Pa) and deposition rate less 1 μm/min. Coatings on the base of Nb3Ge with germanium content from 11 to 23 at.% were obtained

  7. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

    Science.gov (United States)

    Hazbun, Ramsey; Hart, John; Hickey, Ryan; Ghosh, Ayana; Fernando, Nalin; Zollner, Stefan; Adam, Thomas N.; Kolodzey, James

    2016-06-01

    The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

  8. Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    QU Quan-yan; QIU Wan-qi; ZENG De-chang; LIU Zhong-wu; DAI Ming-jiang; ZHOU Ke-song

    2009-01-01

    The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K-cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

  9. Differentially pumped spray deposition as a rapid screening tool for organic and perovskite solar cells

    Science.gov (United States)

    Jung, Yen-Sook; Hwang, Kyeongil; Scholes, Fiona H.; Watkins, Scott E.; Kim, Dong-Yu; Vak, Doojin

    2016-01-01

    We report a spray deposition technique as a screening tool for solution processed solar cells. A dual-feed spray nozzle is introduced to deposit donor and acceptor materials separately and to form blended films on substrates in situ. Using a differential pump system with a motorised spray nozzle, the effect of film thickness, solution flow rates and the blend ratio of donor and acceptor materials on device performance can be found in a single experiment. Using this method, polymer solar cells based on poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61 butyric acid methyl ester (PC61BM) are fabricated with numerous combinations of thicknesses and blend ratios. Results obtained from this technique show that the optimum ratio of materials is consistent with previously reported values confirming this technique is a very useful and effective screening method. This high throughput screening method is also used in a single-feed configuration. In the single-feed mode, methylammonium iodide solution is deposited on lead iodide films to create a photoactive layer of perovskite solar cells. Devices featuring a perovskite layer fabricated by this spray process demonstrated a power conversion efficiencies of up to 7.9%. PMID:26853266

  10. Differentially pumped spray deposition as a rapid screening tool for organic and perovskite solar cells

    Science.gov (United States)

    Jung, Yen-Sook; Hwang, Kyeongil; Scholes, Fiona H.; Watkins, Scott E.; Kim, Dong-Yu; Vak, Doojin

    2016-02-01

    We report a spray deposition technique as a screening tool for solution processed solar cells. A dual-feed spray nozzle is introduced to deposit donor and acceptor materials separately and to form blended films on substrates in situ. Using a differential pump system with a motorised spray nozzle, the effect of film thickness, solution flow rates and the blend ratio of donor and acceptor materials on device performance can be found in a single experiment. Using this method, polymer solar cells based on poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61 butyric acid methyl ester (PC61BM) are fabricated with numerous combinations of thicknesses and blend ratios. Results obtained from this technique show that the optimum ratio of materials is consistent with previously reported values confirming this technique is a very useful and effective screening method. This high throughput screening method is also used in a single-feed configuration. In the single-feed mode, methylammonium iodide solution is deposited on lead iodide films to create a photoactive layer of perovskite solar cells. Devices featuring a perovskite layer fabricated by this spray process demonstrated a power conversion efficiencies of up to 7.9%.

  11. Super-Hydrophobic and Oloephobic Crystalline Coatings by Initiated Chemical Vapor Deposition

    OpenAIRE

    Coclite, Anna Maria; Shi, Yujun; Gleason, Karen K.

    2013-01-01

    Preferred crystallographic orientation (texture) in thin films frequently has a strong effect on the properties of the materials and it is important for stable surface properties. Organized molecular films of poly-perfluorodecylacrylate p(PFDA) were deposited by initiated Chemical Vapor Deposition (iCVD). The high tendency of p(PFDA) to crystallize has been fully retained in the polymers prepared by iCVD. The degree of crystallinity and the preferred orientation of the perfluoro side chains, ...

  12. Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure

    OpenAIRE

    Croonen, Y.; Verspui, G.

    1993-01-01

    Laser induced Chemical Vapour Deposition of a wide variety of materials has been studied extensively at reduced pressures. However, for this technique to be economically and industrially applicable, processes at atmospheric pressure are preferred. A model study was made on the substrate-coating system molybdenum-titaniumnitride focussing on the feasibility to deposit TiN films locally at atmospheric pressure. The results of this study turned out to be very promising. A Nd-YAG laser beam ([MAT...

  13. Physico-chemical study of the focused electron beam induced deposition process

    OpenAIRE

    Bret, Tristan; Hoffmann, Patrik

    2007-01-01

    The focused electron beam induced deposition process is a promising technique for nano and micro patterning. Electrons can be focused in sub-angström dimensions, which allows atomic-scale resolution imaging, analysis, and processing techniques. Before the process can be used in controlled applications, the precise nature of the deposition mechanism must be described and modelled. The aim of this research work is to present a physical and chemical description of the focused electron beam induc...

  14. Discrete formulation of mixed finite element methods for vapor deposition chemical reaction equations

    Institute of Scientific and Technical Information of China (English)

    LUO Zhen-dong; ZHOU Yan-jie; ZHU Jiang

    2007-01-01

    The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical modes by the following governing nonlinear partial differential equations containing velocity vector,temperature field,pressure field,and gas mass field.The mixed finite element(MFE)method is employed to study the system of equations for the vapor deposition chemical reaction processes.The semidiscrete and fully discrete MFE formulations are derived.And the existence and convergence(error estimate)of the semidiscrete and fully discrete MFE solutions are deposition chemical reaction processes,the numerical solutions of the velocity vector,the temperature field,the pressure field,and the gas mass field can be found out simultaneonsly.Thus,these researches are not only of important theoretical means,but also of extremely extensive applied vistas.

  15. High Temperature Nanocomposites For Nuclear Thermal Propulsion and In-Space Fabrication by Hyperbaric Pressure Laser Chemical Vapor Deposition

    Science.gov (United States)

    Maxwell, J. L.; Webb, N. D.; Espinoza, M.; Cook, S.; Houts, M.; Kim, T.

    Nuclear Thermal Propulsion (NTP) is an indispensable technology for the manned exploration of the solar system. By using Hyperbaric Pressure Laser Chemical Vapor Deposition (HP-LCVD), the authors propose to design and build a promising next-generation fuel element composed of uranium carbide UC embedded in a latticed matrix of highly refractory Ta4HfC5 for an NTP rocket capable of sustaining temperatures up to 4000 K, enabling an Isp of up to 1250 s. Furthermore, HP-LCVD technology can also be harnessed to enable 3D rapid prototyping of a variety of materials including metals, ceramics and composites, opening up the possibility of in-space fabrication of components, replacement parts, difficult-to-launch solar sails and panels and a variety of other space structures. Additionally, rapid prototyping with HP-LCVD makes a feasible "live off the land" strategy of interplanetary and interstellar exploration ­ the precursors commonly used in the technology are found, often in abundance, on other solar system bodies either as readily harvestable gas (e.g. methane) or as a raw material that could be converted into a suitable precursor (e.g. iron oxide into ferrocene on Mars).

  16. Fabrication of homojunction Cu2O solar cells by electrochemical deposition

    Science.gov (United States)

    Hsu, Yu-Kuei; Wu, Jan-Rung; Chen, Mei-Hsin; Chen, Ying-Chu; Lin, Yan-Gu

    2015-11-01

    Homostructural Cu2O solar cells were fabricated with consecutive electrochemical depositions of a p-Cu2O thin film and a n-Cu2O layer on a transparent conductive substrate. The parameters of growth Coulomb number for n-type and p-type Cu2O films, which determine the film thickness of Cu2O, were fine-tuned to investigate their effects on the performance of homojunction solar cells. According to XRD and SEM analyses, the crystalline structure and the optimum thickness of Cu2O films were accomplished at growth Coulomb numbers 0.135 C for n-Cu2O and 0.208 C for p-Cu2O. Significantly, the best performance of the homojunction Cu2O cell achieved conversion efficiency 0.42% with Voc = 0.42 V, Jsc = 2.68 mA cm-2 and FF = 0.38. This work hence demonstrates that the proposed strategy to improve the performance of solar cells realized by electrochemical deposition has the potential to produce cheap and environmental friendly solar cells.

  17. Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD)

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Min; Blackman, Chris [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

    2015-07-15

    Aerosol assisted chemical vapour deposition (AACVD) is used to deposit tungsten oxide thin films from tungsten hexacarbonyl (W(CO){sub 6}) at 339 to 358 C on quartz substrate. The morphologies of as-deposited thin films, which are comprised of two phases (W{sub 25}O{sub 73} and W{sub 17}O{sub 47}), vary from planar to nanorod (NR) structures as the distance from the inlet towards the outlet of the reactor is traversed. This is related to variation of the actual temperature on the substrate surface (ΔT = 19 C), which result in a change in growth mode due to competition between growth rate (perpendicular to substrate) and nucleation rate (parallel to substrate). When the ratio of perpendicular growth rate to growth rate contributed by nucleation is higher than 7.1, the as-deposited tungsten oxide thin film forms as NR. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    International Nuclear Information System (INIS)

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling

  19. Surface transformations of carbon (graphene, graphite, diamond, carbide), deposited on polycrystalline nickel by hot filaments chemical vapour deposition

    International Nuclear Information System (INIS)

    The deposition of carbon has been studied at high temperature on polycrystalline nickel by hot filaments activated chemical vapor deposition (HFCVD). The sequences of carbon deposition are studied by surface analyses: Auger electron spectroscopy (AES), electron loss spectroscopy (ELS), X-ray photoelectron spectroscopy (XPS) in a chamber directly connected to the growth chamber. A general scale law of the (C/Ni) intensity lines is obtained with a reduced time. Both, shape analysis of the AES C KVV line and the C1s relative intensity suggest a three-step process: first formation of graphene and a highly graphitic layer, then multiphase formation with graphitic, carbidic and diamond-like carbon and finally at a critical temperature that strongly depends on the pretreatment of the polycrystalline nickel surface, a rapid transition to diamond island formation. Whatever the substrate diamond is always the final product and some graphene layers the initial product. Moreover it is possible to stabilize a few graphene layers at the initial sequences of carbon deposition. The duration of this stabilization step is strongly depending however on the pre-treatment of the Ni surface.

  20. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ozaydin-Ince, Gozde, E-mail: gozdeince@sabanciuniv.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Matin, Asif, E-mail: amatin@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Khan, Zafarullah, E-mail: zukhan@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Zaidi, S.M. Javaid, E-mail: zaidismj@kfupm.edu.sa [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gleason, Karen K., E-mail: kkgleasn@mit.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2013-07-31

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling.

  1. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    Science.gov (United States)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  2. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    NI Jie; LI Zhengcao; ZHANG Zhengjun

    2007-01-01

    In this paper,we report a simple approach to synthesize silicon carbide(SiC)nanowires by solid phase source chemical vapor deposition(CVD) at relatively low temperatures.3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates,and the nanowires are 20-80 am in diameter and several μm in length,with a growth direction of[200].The growth of the nanowires agrees well on vapor-liquid-solid (VLS)process and the film deposited on the substrates plays an important role in the formation of nanowires.

  3. LASER-INDUCED DECOMPOSITION OF METAL CARBONYLS FOR CHEMICAL VAPOR DEPOSITION OF MICROSTRUCTURES

    OpenAIRE

    Tonneau, D.; Auvert, G.; Pauleau, Y.

    1989-01-01

    Tungsten and nickel carbonyls were used to produce metal microstructures by laser-induced chemical vapor deposition (CVD) on various substrates. The deposition rate of microstructures produced by thermodecomposition of W(CO)6 on Si substrates heated with a cw Ar+ laser beam was relatively low (10 to 30 nm/s) even at high temperatures (above 900°C). Ni microstructures were deposited on quartz substrates irradiated with a CO2 laser beam. Relatively high laser powers were needed to heat the Ni s...

  4. Deposition of air-borne 238Pu near a chemical separation facility

    International Nuclear Information System (INIS)

    Three methods were compared to measure deposition of 238Pu released from a chemical separation facility at the Savannah River Plant, Aiken, SC. The following methods were used: adhesive paper; a collector of rain and dryfall; and soil samples. Excellent agreement among the three methods was found. The measured deposition for the particular source term and meteorological conditions at the Savannah River Plant is described by y proportional to x/sup -1.36/ where y is the pCi of 238Pu deposited per square meter per mC: 238Pu released, and x is distance in meters from the source

  5. Growth of Mg-doped InN by Metal Organic Chemical Vapor Deposition

    Science.gov (United States)

    Khan, N.; Nepal, N.; Lin, J. Y.; Jiang, H. X.

    2007-03-01

    InN with an energy gap of ˜ 0.7 eV, has recently attracted extensive attention due to its potential applications in semiconductor devices such as light emitting diodes, lasers, and high efficiency solar cells. However the ability to grow both p-type and n-type InN is essential to realize these devices. All as grown unintentionally doped InN are n-type. The tendency of native defects in InN to form donors manifests itself severely at surfaces where high levels of electron accumulation are observed. The highly n-type conductive layer at the surface of InN films creates difficulties in the demonstration of p-type InN. Nevertheless it is important to investigate the optical and structural properties of Mg-doped InN. We report here on the growth of Mg-doped InN epilayers by metal organic chemical vapor deposition. Photoluminescence (PL) was employed to study the effects of different growth conditions of Mg-doped InN. PL studies revealed that in addition to emission peak at ˜ 0.82 eV in undoped InN layers, Mg-doped InN layers exhibit an emission peak at ˜ 0.75 eV. The peak at ˜ 0.75eV for Mg-doped InN could be related to defects generated by Mg doping in InN. Various other measurements such as Hall effect measurement, X-ray diffraction and atomic force microscopy were carried out to provide further understanding.

  6. The Influence of Electrophoretic Deposition for Fabricating Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    Jung-Chuan Chou

    2014-01-01

    Full Text Available Titanium dioxide (TiO2 film was deposited on fluorine-doped tin oxide (FTO glass substrate by electrophoretic deposition method (EPD. TiO2 films were prepared with different I2 dosages, electric field intensities and deposition time (D.T., electrophotic deposition times. By different I2 dosages, electric field intensities, deposition time, electrophotic deposition times fabricated TiO2 films and compared photoelectric characteristics of TiO2 films to find optimal parameters which were the highest photovoltaic conversion efficiency. And use electrochemical impedance spectroscopy (EIS to measure the Nyquist plots under different conditions and analyze the impendence of dye-sensitized solar cells at the internal heterojunction. According to the experimental results, the I2 dosage was 0.025 g which obtained the optimal characteristic parameters. Thickness of TiO2 film was 10.6 μm, the open-circuit voltage (Voc was 0.77 V, the short-circuit current density (Jsc was 7.20 mA/cm2, the fill factor (F.F. was 53.41%, and photovoltaic conversion efficiency (η was 2.96%.

  7. Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

    International Nuclear Information System (INIS)

    Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

  8. Titanium dioxide antireflection coating for silicon solar cells by spray deposition

    Science.gov (United States)

    Kern, W.; Tracy, E.

    1980-01-01

    A high-speed production process is described for depositing a single-layer, quarter-wavelength thick antireflection coating of titanium dioxide on metal-patterned single-crystal silicon solar cells for terrestrial applications. Controlled atomization spraying of an organotitanium solution was selected as the most cost-effective method of film deposition using commercial automated equipment. The optimal composition consists of titanium isopropoxide as the titanium source, n-butyl acetate as the diluent solvent, sec-butanol as the leveling agent, and 2-ethyl-1-hexanol to render the material uniformly depositable. Application of the process to the coating of circular, large-diameter solar cells with either screen-printed silver metallization or with vacuum-evaporated Ti/Pd/Ag metallization showed increases of over 40% in the electrical conversion efficiency. Optical characteristics, corrosion resistance, and several other important properties of the spray-deposited film are reported. Experimental evidence indicates a wide tolerance in the coating thickness upon the overall efficiency of the cell. Considerations pertaining to the optimization of AR coatings in general are discussed, and a comprehensive critical survey of the literature is presented.

  9. The chemical evolution of a travertine-depositing stream: geochemical processes and mass transfer reactions

    Science.gov (United States)

    Lorah, M.M.; Herman, J.S.

    1988-01-01

    Focuses on quantiatively defining the chemical changes occurring in Falling Spring Creek, a travertine-depositing stream located in Alleghany County, Virgina. The processes of CO2 outgassing and calcite precipitation or dissolution control the chemical evolution of the stream. Physical evidence for calcite precipitation exists in the travertine deposits which are first observed immediately above the waterfall and extend for at least 1.0 km below the falls. Net calcite precipitation occurs at all times of the year but is greatest during low-flow conditions in the summer and early fall. -from Authors

  10. Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

    OpenAIRE

    Sharma, Subash; Kalita, Golap; Vishwakarma, Riteshkumar; Zulkifli, Zurita; Tanemura, Masaki

    2015-01-01

    In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal w...

  11. Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHAO Guo-Liang; LIN Bi-Xia; HONG Liang; MENG Xiang-Dong; FU Zhu-Xi

    2004-01-01

    ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source used here is zinc acetate, (CHsCOO)2Zn, and the carrier gas is nitrogen. The sample, which was prepared at 550℃ during growth and then annealed in air at 900℃ , has only a ZnO (002) diffraction peak at 34.6° with its FWHM of 0.23° in the XRD pattern. The room-temperature PL spectrum shows a strong ultraviolet emission with the peak centred at 380nm. We analysed the effects of many factors, such as the source, substrates, growth and annealing temperatures, and annealing ambience, on the structural and optical properties of our prepared ZnO films.

  12. Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Gu Guang-Rui; Wu Bao-Jia; Jin Zhe; Ito Toshimichi

    2008-01-01

    This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture.The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy,respectively.The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm2 and a current density of 3.2mA/cm2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%.The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

  13. Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

    Science.gov (United States)

    Gu, Guang-Rui; Wu, Bao-Jia; Jin, Zhe; Ito, Toshimichi

    2008-02-01

    This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm2 and a current density of 3.2mA/cm2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

  14. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    International Nuclear Information System (INIS)

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of ∼ 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  15. Hot wire chemical vapor deposition: limits and opportunities of protecting the tungsten catalyzer from silicide with a cavity

    Energy Technology Data Exchange (ETDEWEB)

    Frigeri, P.A. [Dept. de Fisica Aplicada i Optica, Universitat de Barcelona, Barcelona-08028 (Spain); Nos, O., E-mail: oriol_nos@ub.ed [Dept. de Fisica Aplicada i Optica, Universitat de Barcelona, Barcelona-08028 (Spain); Ecotecnia (ALSTOM Group) (Spain); Bengoechea, S.; Frevert, C.; Asensi, J.M.; Bertomeu, J. [Dept. de Fisica Aplicada i Optica, Universitat de Barcelona, Barcelona-08028 (Spain)

    2009-04-30

    Hot Wire Chemical Vapor Deposition (HW-CVD) is one of the most promising techniques for depositing the intrinsic microcrystalline silicon layer for the production of micro-morph solar cells. However, the silicide formation at the colder ends of the tungsten wire drastically reduces the lifetime of the catalyzer, thus limiting its industrial exploitation. A simple but interesting strategy to decrease the silicide formation is to hide the electrical contacts of the catalyzer in a long narrow cavity which reduces the probability of the silane molecules to reach the colder ends of the wire. In this paper, the working mechanism of the cavity is elucidated. Measurements of the thickness profile of the silicon deposited in the internal walls of the cavity have been compared with those predicted using a simple diffusion model based on the assumption of Knudsen flow. A lifetime study of the protected and unprotected wires has been carried out. The different mechanisms which determine the deterioration of the catalyzer have been identified and discussed.

  16. Physical properties of chemically deposited Bi2S3 thin films using two post-deposition treatments

    International Nuclear Information System (INIS)

    Highlights: • The post-deposition treatment by Ar plasma is a viable alternative to enhance the optical, electrical, morphological and structural properties of Bi2S3 semiconductor thin films. • The plasma treatment avoids the loss in thickness of the chemically deposited Bi2S3 thin films. • The Eg values were 1.60 eV for the thermally annealed samples and 1.56 eV for the Ar plasma treated samples. • The highest value obtained for the electrical conductivity was 7.7 × 10−2 (Ω cm)−1 in plasma treated samples. - Abstract: As-deposited bismuth sulfide (Bi2S3) thin films prepared by chemical bath deposition technique were treated with thermal annealed in air atmosphere and argon AC plasma. The as-deposited, thermally annealing and plasma treatment Bi2S3 thin films have been characterized by X-ray diffraction (XRD) analysis, atomic force microscopy analysis (AFM), transmission, specular reflectance and electrical measurements. The structural, morphological, optical and electrical properties of the films are compared. The XRD analysis showed that both post-deposition treatments, transform the thin films from amorphous to a crystalline phase. The atomic force microscopy (AFM) measurement showed a reduction of roughness for the films treated in plasma. The energy band gap value of the as-prepared film was Eg = 1.61 eV, while for the film thermally annealed was Eg = 1.60 eV and Eg = 1.56 eV for film treated with Plasma. The electrical conductivity under illumination of the as-prepared films was 3.6 × 10−5 (Ω cm)−1, whereas the conductivity value for the thermally annealed films was 2.0 × 10−3 (Ω cm)−1 and for the plasma treated films the electrical conductivity increases up to 7.7 × 10−2 (Ω cm)−1

  17. Solar physical vapor deposition: A new approach for preparing magnesium titanate nanopowders

    Science.gov (United States)

    Apostol, Irina; Saravanan, K. Venkata; Monty, Claude J. A.; Vilarinho, Paula M.

    2013-11-01

    Solar energy is a major factor in the equation of energy, because of the unlimited potential of the sun that eclipses all other renewable sources of energy. Solar physical vapor deposition (SPVD) is a core innovative, original and environmentally friendly process to prepare nanocrystalline materials in a powder form. The principle of this process is to melt the material under concentrated solar radiation, which evaporates and condenses as nanopowders on a cold surface. We synthesized nanopowders of magnesium titanate by the SPVD process at PROMES Laboratory in Odeillo-Font Romeu, France. The SPVD system consists of a parabolic mirror concentrator, a mobile plane mirror ("heliostat") tracking the sun and a solar reactor "heliotron". The synthesized nanopowders were analyzed by X-ray diffraction (XRD) to know their crystalline structure and scanning electron microscopy (SEM) was used for determining the surface morphology. We have shown that the characteristics of obtained nanotitanates were determined by the targets' composition and SPVD process parameters such as the working pressure inside the solar reactor and evaporation duration (process time).

  18. Solar physical vapor deposition: A new approach for preparing magnesium titanate nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Apostol, Irina [S.C. IPEE Amiral Trading Impex S.A., 115300 Curtea de Arges (Romania); Saravanan, K. Venkata, E-mail: vsk@ua.pt [Department of Materials and Ceramic Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Monty, Claude J.A. [CNRS-PROMES Laboratory, Odeillo 66120, Font Romeu (France); Vilarinho, Paula M. [Department of Materials and Ceramic Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal)

    2013-11-15

    Solar energy is a major factor in the equation of energy, because of the unlimited potential of the sun that eclipses all other renewable sources of energy. Solar physical vapor deposition (SPVD) is a core innovative, original and environmentally friendly process to prepare nanocrystalline materials in a powder form. The principle of this process is to melt the material under concentrated solar radiation, which evaporates and condenses as nanopowders on a cold surface. We synthesized nanopowders of magnesium titanate by the SPVD process at PROMES Laboratory in Odeillo-Font Romeu, France. The SPVD system consists of a parabolic mirror concentrator, a mobile plane mirror (“heliostat”) tracking the sun and a solar reactor “heliotron”. The synthesized nanopowders were analyzed by X-ray diffraction (XRD) to know their crystalline structure and scanning electron microscopy (SEM) was used for determining the surface morphology. We have shown that the characteristics of obtained nanotitanates were determined by the targets’ composition and SPVD process parameters such as the working pressure inside the solar reactor and evaporation duration (process time).

  19. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

    OpenAIRE

    Zhu, Wenjuan; Low, Tony; Lee, Yi-Hsien; Wang, Han; Farmer, Damon B.; Kong, Jing; Xia, Fengnian; Avouris, Phaedon

    2013-01-01

    Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic pr...

  20. Growth and properties of few-layer graphene prepared by chemical vapor deposition

    OpenAIRE

    Park, Hye Jin; Meyer, Jannik; Roth, Siegmar; Skakalova, Viera

    2009-01-01

    The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM) images show highly crystalline single layer parts of the sample changing to multilayer domains where crystal boundaries are connected by chemical bonds. This suggests two different growth mechanisms. CVD and carbon segregation participate in the growth process ...

  1. Single-chamber process development of microcrystalline sicicon solar cells and high-rate deposited intrinsic layers

    OpenAIRE

    Graf, Urs Samuel; Shah, Arvind

    2005-01-01

    The "Micromorph" tandem solar cell concept consisting of an amorphous and a microcrystalline silicon solar cell is considered to be one of the most promising concepts for the next solar cell generation. To translate this concept into action, efficient industrial processes have to be developed. Thereby important issues have to be considered, such as e.g. the development of an economical single-chamber process and the achievement of high deposition rates for intrinsic microcrystalline silicon (...

  2. CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    Zhang Yong-ping; Gu You-song; Chang Xiang-rong; Tian Zhong-zhuo; Shi Dong-xia; Zhang Xiu-fang; Yuan lei

    2000-01-01

    The crystalline carbon nitride thin films have beenprepared on Si (100) substrates using microwave plasma chemical vapordeposition technique. The experimental X-ray diffractionpattern of the films prepared contain all the strongpeaks of -C3N4 and -C3N4, but most of thepeaks are overlapped.The films are composed of -C3N4 and -C3N4.The N/C atomic ratio isclose to the stoichiometric value 1.33. X-ray photoelectronspectroscopic analysis indicated that thebinding energies of C 1s and N 1s are 286.43eV and 399.08 eV respectively.The shifts are attributed to the polarization of C-N bond. Bothobserved Raman and Fourier transform infrared spectra werecompared with the theoretical calculations. The results support theexistence of C-N covalent bond in - and -C3N4 mixture.

  3. Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

    International Nuclear Information System (INIS)

    Thin films of Pt-doped CeO2 were grown by direct liquid injection chemical vapor deposition on silicon wafer covered by native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to the deposition way. For platinum deposited on top of cerium oxide thin films previously grown, metallic platinum particles were obtained. Cerium and platinum codeposition allowed obtaining a Pt0 and Pt2+ mixture with the Pt2+ to Pt ratio strongly dependent on the platinum flow rate during the deposition. Indeed, the lower the platinum precursor flow rate is, the higher the Pt2+ to Pt ratio is. Moreover, surface and cross-sectional morphologies obtained by scanning electron microscopy evidenced porous layers in any case. - Highlights: • Pt-doped ceria were synthesized. • Films were obtained by direct liquid injection chemical vapor deposition. • Simultaneous deposition of Pt and Ce was used to obtain homogeneous films. • Pt2+ was revealed through X-ray photoelectron spectroscopy. • Different routes were used to exalt Pt2+/Pt ratio

  4. Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zanfoni, N.; Avril, L.; Imhoff, L.; Domenichini, B., E-mail: bruno.domenichini@u-bourgogne.fr; Bourgeois, S.

    2015-08-31

    Thin films of Pt-doped CeO{sub 2} were grown by direct liquid injection chemical vapor deposition on silicon wafer covered by native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to the deposition way. For platinum deposited on top of cerium oxide thin films previously grown, metallic platinum particles were obtained. Cerium and platinum codeposition allowed obtaining a Pt{sup 0} and Pt{sup 2+} mixture with the Pt{sup 2+} to Pt ratio strongly dependent on the platinum flow rate during the deposition. Indeed, the lower the platinum precursor flow rate is, the higher the Pt{sup 2+} to Pt ratio is. Moreover, surface and cross-sectional morphologies obtained by scanning electron microscopy evidenced porous layers in any case. - Highlights: • Pt-doped ceria were synthesized. • Films were obtained by direct liquid injection chemical vapor deposition. • Simultaneous deposition of Pt and Ce was used to obtain homogeneous films. • Pt{sup 2+} was revealed through X-ray photoelectron spectroscopy. • Different routes were used to exalt Pt{sup 2+}/Pt ratio.

  5. Thermoluminescence Characteristics of a New Production of Chemical Vapour Deposition Diamond

    Energy Technology Data Exchange (ETDEWEB)

    Furetta, C.; Kitis, G.; Brambilla, A.; Jany, C.; Bergonzo, P.; Foulon, F

    1999-07-01

    The dosimetric properties are presented of a recent production of chemical vapour deposition diamond growth. Experimental data concerning the TL response as a function of dose, the energy response and fading behaviour are reported. Very preliminary results suggest that diamond can be used in TL mode as well as an activation detector. (author)

  6. Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina;

    2016-01-01

    A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar...

  7. Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

    OpenAIRE

    Cao, H. L.; Yu, Q. K.; Jauregui, L. A.; Tian, J; Wu, W.; Z. Liu; Jalilian, R.; Benjamin, D. K.; Jiang, Z.; J. Bao; Pei, S S; Chen, Y P

    2009-01-01

    We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field ...

  8. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.;

    2005-01-01

    investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

  9. Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Well-aligned ZnO nanowires were grown on Si substrate by chemical vapor deposition.The experimental results showed that the density of nanowires was related to the heating process and growth temperature.High-density ZnO nanowires were obtained under optimal conditions.The growth mechanism of the ZnO nanowires was presented as well.

  10. CHEMICALLY DEPOSITED SILVER FILM USED AS A SERS-ACTIVE OVER COATING LAYER FOR POLYMER FILM

    Institute of Scientific and Technical Information of China (English)

    Xiao-ning Liu; Gi Xue; Yun Lu; Jun Zhang; Fen-ting Li; Chen-chen Xue; Stephen Z.D. Cheng

    2001-01-01

    When colloidal silver particles were chemically deposited onto polymer film as an over-coating layer, surfaceenhanced Raman scattering (SERS) spectra could be collected for the surface analysis. SERS measurements of liquid crystal film were successfully performed without disturbing the surface morphology.

  11. Chemical vapor deposition of ZrC within a spouted bed by bromide process

    Science.gov (United States)

    Ogawa, T.; Ikawa, K.; Iwamoto, K.

    1981-03-01

    ZrC coatings by chemical vapor deposition were applied to particles of ThO 2, UO 2 and Al 2O 3 at 1623-1873 K. The feed gas mixture consisted of ZrBr 4, CH 4, H 2 and Ar. The results were compared with the calculated chemical equilibria in the Zr-C-H-Br system. It was shown that the weight and composition of the deposit can be calculated by thermochemical analysis after correcting the methane flow rate for a pyrolysis efficiency. Predominant reaction presumably occurring were derived by a mass balance consideration on the calculated equilibrium species. A simplified model of the ZrC deposition was proposed.

  12. A Study on Medium Temperature Chemical Vapor Deposition (MT-CVD) Technology and Super Coating Materials

    Institute of Scientific and Technical Information of China (English)

    GAO Jian; LI Jian-ping; ZENG Xiang-cai; MA Wen-cun

    2004-01-01

    In this paper, the dense and columnar crystalline TiCN coating layers with very good bonding strength between a layer and another layer was deposited using Medium Temperature Chemical Vapor Deposition (MT-CVD) where CH3CN organic composite with C/N atomic clusters etc. was utilized at 700 ~ 900 ℃. Effect of coating processing parameters, such as coating temperature, pressure and different gas flow quantity on structures and properties of TiCN coating layers were investigated. The super coating mechanis mand structures were analyzed. The new coating processing parameters and properties of carbide inserts with super coating layers were gained by using the improved high temperature chemical vapor deposition (HTCVD) equipment and HT-CVD, in combination with MT-CVD technology.

  13. Chemical deposition and characterization of thorium-alloyed lead sulfide thin films

    International Nuclear Information System (INIS)

    We present a chemical bath deposition process for alloying PbS thin films with 232Th, a stable isotope of thorium, to provide a model system for radiation damage studies. Variation of deposition parameters such as temperature, reagent concentrations and time allows controlling the properties of the resulting films. Small amounts of incorporated thorium (0.5%) strongly affected the surface topography and the orientation of the films and slowed down the growth rate. The Th appears to be incorporated as substitutional ions in the PbS lattice. - Highlights: • Chemical bath deposition has been used for alloying lead sulfide films with 232Th. • The effect of Th on the structural and optical properties of the films was studied. • Incorporation of Th affected surface topography, orientation, Eg and growth rate

  14. Fabrication and characterization of indium sulfide thin films deposited on SAMs modified substrates surfaces by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng Xu [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Lu Yongjuan; Zhang Xiaoliang [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Graduate School of Chinese Academy of Sciences, Beijing, 10049 (China); Yang Baoping [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Yi Gewen [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Jia Junhong, E-mail: jhjia@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)

    2011-11-01

    In an effort to explore the optoelectronic properties of nanostructured indium sulfide (In{sub 2}S{sub 3}) thin films for a wide range of applications, the In{sub 2}S{sub 3} thin films were successfully deposited on the APTS layers (-NH{sub 2}-terminated) modified ITO glass substrates using the chemical bath deposition technique. The surface morphology, structure and composition of the resultant In{sub 2}S{sub 3} thin films were characterized by FESEM, XRD, and XPS, respectively. Also, the correlations between the optical properties, photocurrent response and the thickness of thin films were established. According to the different deposition mechanisms on the varying SAMs terminational groups, the positive and negative micropatterned In{sub 2}S{sub 3} thin films were successfully fabricated on modified Si substrates surface combining with the ultraviolet lithography process. This offers an attractive opportunity to fabricate patterned In{sub 2}S{sub 3} thin films for controlling the spatial positioning of functional materials in microsystems.

  15. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  16. Deposition kinetics and characterization of stable ionomers from hexamethyldisiloxane and methacrylic acid by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Urstöger, Georg; Resel, Roland; Koller, Georg; Coclite, Anna Maria

    2016-04-01

    A novel ionomer of hexamethyldisiloxane and methacrylic acid was synthesized by plasma enhanced chemical vapor deposition (PECVD). The PECVD process, being solventless, allows mixing of monomers with very different solubilities, and for polymers formed at high deposition rates and with high structural stability (due to the high number of cross-links and covalent bonding to the substrate) to be obtained. A kinetic study over a large set of parameters was run with the aim of determining the optimal conditions for high stability and proton conductivity of the polymer layer. Copolymers with good stability over 6 months' time in air and water were obtained, as demonstrated by ellipsometry, X-Ray reflectivity, and FT-IR spectroscopy. Stable coatings showed also proton conductivity as high as 1.1 ± 0.1 mS cm-1. Chemical analysis showed that due to the high molecular weight of the chosen precursors, it was possible to keep the plasma energy-input-per-mass low. This allowed limited precursor fragmentation and the functional groups of both monomers to be retained during the plasma polymerization.

  17. Chemical Alteration Pathways Resulting in High-Silica Deposits on Mars

    Science.gov (United States)

    Yen, A. S.; Gellert, R.; Clark, B. C.; Ming, D. W.; Morris, R. V.; Mittlefehldt, D. W.

    2015-12-01

    The chemical compositions of nearly 1000 targets at the surface of Mars have been established by the cross-calibrated Alpha-Particle X-ray Spectrometers (APXS) onboard the Mars Science Laboratory (MSL) and the two Mars Exploration Rovers (MER). Comparing and contrasting these measurements provides greater insight into martian surface processes than the standalone use of data from an individual mission. For example, the combination of MER and MSL APXS data indicate two distinct pathways for silicate weathering: 1. Open system alteration at circumneutral pH. Fracture-filling deposits in impact breccias at the rim of Endeavour Crater analyzed by the Opportunity rover show the highest SiO2 concentrations at Meridiani Planum (62 wt%) with correlated Si and Al (Si:Al ~0.3). These Mg and Fe-depleted veins have chemical signatures consistent with an Al-rich smectite and likely formed as a precipitate from non-acidic aqueous solutions. Similar high Si and Al deposits found at the Gusev landing site by the Spirit rover were interpreted as montmorillonite. 2. Open system, acid-sulfate alteration. In sharp contrast to Si and Al-rich deposits, a group of high-Si targets have low concentrations of Al. Deposits in Gusev Crater near "Home Plate," a hydrothermal locale with nearby fumarolic deposits, fall into this category. Acid-sulfate processes are likely responsible for mobilizing most other elements, including Al, leaving behind a Si-rich, and generally Ti-rich, residue. Recent high-Si samples (up to 72 wt% SiO2) analyzed by the Curiosity rover exhibit similar chemical patterns, including elevated TiO2 concentrations, suggestive that acidic leaching may also have been an important process in the development of deposits found within Gale Crater. The framework of chemical analyses established through years of Mars surface operations provides the basis against which future measurements by Opportunity, Curiosity and the Mars 2020 rover can be compared.

  18. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

    Energy Technology Data Exchange (ETDEWEB)

    Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

    2016-04-26

    A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

  19. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  20. Synthesis of low leakage current chemical vapour deposited (CVD) diamond films for particle detection

    International Nuclear Information System (INIS)

    We report on synthesis of diamond films by direct current glow discharge chemical vapour deposition (CVD) prepared at different deposition conditions, for application in high energy physics. The synthesis apparatus is briefly described. Continuous undoped diamond samples have been grown onto Mo substrates with a deposition area up to 1 cm2 and an electrical resistivity as high as 1013 Ωcm. The deposition parameters are related to the material properties of the diamonds, investigated by optical spectroscopy, electron microscopy and diffraction analysis. Decreasing the linear growth rate results in good quality films with small remnants of graphite-like phases. The high crystalline quality and phase purity of the films are related to very low values of leakage currents. The particle induced conductivity of these samples is also studied and preliminary results on charge collection efficiency are presented. (orig.)

  1. Processes and environmental significance of the subglacial chemical deposits in Tianshan Mountains

    Institute of Scientific and Technical Information of China (English)

    LIU; Gengnian; LUO; Risheng; CAO; Jun

    2005-01-01

    On the bedrock surface of Glacier No.1 in the headwater of Urumqi River, Tianshan Mts., well layered and crystallized subglacial calcite precipitations were discovered. Based on observations and analysis of the surface form, sedimentary texture and structure, and chemical composition of the deposits, clues about the subglacial processes and environment are deduced. The radial-growth crustation texture of the deposits, which builds up in the saturated CaCO3 solution, proves the existence of pressure melting water and water films under Glacier No.1; and their rhythmic beddings, dissolved planes and unconformable contacts show that the water films responsible for the formation of these structures were in a wide range of spatial as well as temporal variations. Though formed under continental glacier in non-limestone area, the deposits are quite similar to those formed under temperate glaciers in limestone areas, a fact that shows a similar process of chemical precipitation between the two. Hence the enrichment of calcium in the subglacial melting water and the process of precipitation have actually little to do with the bedrock lithology and the glacier types. The cemented detritus in the deposits are rich in Fe and Al while depleted in K, Na and Si; also the included clay mineral consists mainly of illite, which reveals some weak chemical weathering under the continental glacier. The subglacial CaCO3 precipitates when plenty of Ca++ melt into the subglacial melting water on a comparatively enclosed ice-bedrock interface under a high CO2 partial pressure, the forming of subglacial chemical deposits therefore offers unequivocal evidence for the ongoing of subglacial chemical reactions.

  2. Sputter deposition of transition-metal carbide films — A critical review from a chemical perspective

    Energy Technology Data Exchange (ETDEWEB)

    Jansson, Ulf, E-mail: ulf.jansson@kemi.uu.se [Department of Chemistry, Ångström, Uppsala Universitet (Sweden); Lewin, Erik [Laboratory for Nanoscale Materials Science, Empa (Switzerland); Department of Chemistry, Ångström, Uppsala Universitet (Sweden)

    2013-06-01

    Thin films based on transition-metal carbides exhibit many interesting physical and chemical properties making them attractive for a variety of applications. The most widely used method to produce metal carbide films with specific properties at reduced deposition temperatures is sputter deposition. A large number of papers in this field have been published during the last decades, showing that large variations in structure and properties can be obtained. This review will summarise the literature on sputter-deposited carbide films based on chemical aspects of the various elements in the films. By considering the chemical affinities (primarily towards carbon) and structural preferences of different elements, it is possible to understand trends in structure of binary transition-metal carbides and the ternary materials based on these carbides. These trends in chemical affinity and structure will also directly affect the growth process during sputter deposition. A fundamental chemical perspective of the transition-metal carbides and their alloying elements is essential to obtain control of the material structure (from the atomic level), and thereby its properties and performance. This review covers a wide range of materials: binary transition-metal carbides and their nanocomposites with amorphous carbon; the effect of alloying carbide-based materials with a third element (mainly elements from groups 3 through 14); as well as the amorphous binary and ternary materials from these elements deposited under specific conditions or at certain compositional ranges. Furthermore, the review will also emphasise important aspects regarding materials characterisation which may affect the interpretation of data such as beam-induced crystallisation and sputter-damage during surface analysis.

  3. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  4. On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Handuja Sangeeta

    2010-01-01

    Full Text Available Abstract Carbon nanotubes (CNTs were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.

  5. Chemical vapor deposition of atomically thin materials for membrane dialysis applications

    Science.gov (United States)

    Kidambi, Piran; Mok, Alexander; Jang, Doojoon; Boutilier, Michael; Wang, Luda; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Atomically thin 2D materials like graphene and h-BN represent a new class of membranes materials. They offer the possibility of minimum theoretical membrane transport resistance along with the opportunity to tune pore sizes at the nanometer scale. Chemical vapor deposition has emerged as the preferable route towards scalable, cost effective synthesis of 2D materials. Here we show selective molecular transport through sub-nanometer diameter pores in graphene grown via chemical vapor deposition processes. A combination of pressure driven and diffusive transport measurements shows evidence for size selective transport behavior which can be used for separation by dialysis for applications such as desalting of biomolecular or chemical solutions. Principal Investigator

  6. A comparison of reversible chemical reactions for solar thermochemical power generation

    OpenAIRE

    Williams, O. M.

    1980-01-01

    Reversible chemical reactions operating in a thermochemical energy transfer system have been proposed for solar electricity generation in order to solve not only the problem of energy transport from the solar collection field to a central power plant, but also potentially the long term lossless energy storage problem through underground storage of the reaction products. A number of reactions have been proposed for solar thermochemical power generation and in this paper the thermodynamic and c...

  7. Hybrid solar cells using CdS thin films deposited via spray pyrolysis technique

    International Nuclear Information System (INIS)

    The paper presents the photovoltaic performance of hybrid solar cells comprising of thin films of cadmium sulphide and poly(3-hexyl)thiophene. Cadmium sulphide thin films were deposited using spray pyrolysis technique. Current-voltage characterizations were performed for cadmium sulphide/poly(3-hexyl)thiophene heterojunctions in dark and under illumination (100 mWcm−2). The best device yields a short circuit current density of 1.54 mA/cm2, an open circuit voltage of 343 mV, and a power conversion efficiency of 0.15%. - Highlights: • Hybrid solar cells were fabricated using CdS and poly(3-hexyl)thiophene. • CdS thin films were grown by spray pyrolysis technique. • The best cell performance was achieved for the 100 nm thick CdS films. • The highest short circuit current was measured as 1.54 mAcm−2 for the best cell

  8. Chemical Signatures of Interstellar Dusts Preserved in Primitive Chondrites and Inner Planets of the Solar System

    Science.gov (United States)

    Yin, Qing-Zhu

    2002-01-01

    We show that the inheritance of interstellar materials by the solar system is not only documented by the presence of presolar grains, various isotopic anomalies, but also expressed in the chemical element distribution in the inner solar system. Additional information is contained in the original extended abstract.

  9. Sequential deposition as a route to high-performance perovskite-sensitized solar cells

    KAUST Repository

    Burschka, Julian

    2013-07-10

    Following pioneering work, solution-processable organic-inorganic hybrid perovskites - such as CH 3 NH 3 PbX 3 (X = Cl, Br, I) - have attracted attention as light-harvesting materials for mesoscopic solar cells. So far, the perovskite pigment has been deposited in a single step onto mesoporous metal oxide films using a mixture of PbX 2 and CH 3 NH 3 X in a common solvent. However, the uncontrolled precipitation of the perovskite produces large morphological variations, resulting in a wide spread of photovoltaic performance in the resulting devices, which hampers the prospects for practical applications. Here we describe a sequential deposition method for the formation of the perovskite pigment within the porous metal oxide film. PbI 2 is first introduced from solution into a nanoporous titanium dioxide film and subsequently transformed into the perovskite by exposing it to a solution of CH 3 NH 3 I. We find that the conversion occurs within the nanoporous host as soon as the two components come into contact, permitting much better control over the perovskite morphology than is possible with the previously employed route. Using this technique for the fabrication of solid-state mesoscopic solar cells greatly increases the reproducibility of their performance and allows us to achieve a power conversion efficiency of approximately 15 per cent (measured under standard AM1.5G test conditions on solar zenith angle, solar light intensity and cell temperature). This two-step method should provide new opportunities for the fabrication of solution-processed photovoltaic cells with unprecedented power conversion efficiencies and high stability equal to or even greater than those of today\\'s best thin-film photovoltaic devices. © 2013 Macmillan Publishers Limited. All rights reserved.

  10. Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Yu-Tsu Lee

    2016-05-01

    Full Text Available In this paper, we propose a chemically grown titanium oxide (TiO2 on Si to form a heterojunction for photovoltaic devices. The chemically grown TiO2 does not block hole transport. Ultraviolet photoemission spectroscopy was used to study the band alignment. A substantial band offset at the TiO2/Si interface was observed. X-ray photoemission spectroscopy (XPS revealed that the chemically grown TiO2 is oxygen-deficient and contains numerous gap states. A multiple-trap-assisted tunneling (TAT model was used to explain the high hole injection rate. According to this model, the tunneling rate can be 105 orders of magnitude higher for holes passing through TiO2 than for flow through SiO2. With 24-nm-thick TiO2, a Si solar cell achieves a 33.2 mA/cm2 photocurrent on a planar substrate, with a 9.4% power conversion efficiency. Plan-view scanning electron microscopy images indicate that a moth-eye-like structure formed during TiO2 deposition. This structure enables light harvesting for a high photocurrent. The high photocurrent and ease of production of chemically grown TiO2 imply that it is a suitable candidate for future low-cost, high-efficiency solar cell applications.

  11. Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells

    International Nuclear Information System (INIS)

    Atomic layer deposition (ALD) of TiS2 is investigated with titanium tetrachloride and hydrogen sulfide precursors. In-situ quartz crystal microbalance and ex-situ x-ray reflectivity measurements are carried out to study self-limiting deposition chemistry and material growth characteristics. The saturated growth rate is found to be ca. 0.5 Å/cycle within the ALD temperature window of 125–200 °C. As grown material is found poorly crystalline. ALD grown TiS2 is applied as a photon harvesting material for solid state sensitized solar cells with TiO2 as electron transport medium. Initial results with Spiro-OMeTAD as hole conducting layer show ca. 0.6% energy conversion efficiency under 1 sun illumination

  12. Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell

    Institute of Scientific and Technical Information of China (English)

    赵占霞; 崔容强; 孟凡英; 于化丛; 周之斌

    2004-01-01

    This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si ∶ H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h.

  13. Influence of precursor solution parameters on chemical properties of calcium phosphate coatings prepared using Electrostatic Spray Deposition (ESD).

    NARCIS (Netherlands)

    Leeuwenburgh, S.C.G.; Wolke, J.G.C.; Schoonman, J.; Jansen, J.A.

    2004-01-01

    A novel coating technique, referred to as Electrostatic Spray Deposition (ESD), was used to deposit calcium phosphate (CaP) coatings with a variety of chemical properties. The relationship between the composition of the precursor solutions and the crystal and molecular structure of the deposited coa

  14. Chemically deposited TiO2/CdS bilayer system for photoelectrochemical properties

    Indian Academy of Sciences (India)

    P R Deshmukh; U M Patil; K V Gurav; S B Kulkarni; C D Lokhande

    2012-12-01

    In the present investigation, TiO2, CdS and TiO2/CdS bilayer system have been deposited on the fluorine doped tin oxide (FTO) coated glass substrate by chemical methods. Nanograined TiO2 was deposited on FTO coated glass substrates by successive ionic layers adsorption and reaction (SILAR) method. Chemical bath deposition (CBD)method was employed to deposit CdS thin film on pre-deposited TiO2 film. A further study has beenmade for structural, surface morphological, optical and photoelectrochemical (PEC) properties of FTO/TiO2, FTO/CdS and FTO/TiO2/CdS bilayers system. PEC behaviour of FTO/TiO2/CdS bilayers was studied and compared with FTO/CdS single system. FTO/TiO2/CdS bilayers system showed improved performance of PEC properties over individual FTO/CdS thin films.

  15. Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Naik, Anupriya J.T.; Bowman, Christopher; Panjwani, Naitik [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London WC1H 0HY (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2013-10-01

    Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively. The electric fields were generated by applying a potential difference between the inter-digitated electrodes of the gas sensor substrates during the deposition. The deposited films were characterised using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The application of an electric field, encouraged the formation of interesting and unusual nanostructured morphologies, with a change in scale length and island packing. It was also noted that crystallographic orientation of the films could be controlled as a function of electric field type and strength. The gas sensor properties of the films were also examined; it was found that a two to three fold enhancement in the gas response could be observed from sensors with enhanced morphologies compared to control sensors grown without application of an electric field. - Highlights: • Electric field assisted chemical vapour deposition method • Ability to create high surface area film architectures • Can produce enhanced sensor response • Good control over film properties.

  16. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  17. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista-UNESP, Avenida Tres de Marco, 511, Alto da Boa Vista, 18087-180, Soracaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Rouxinol, Francisco P.M.; Gelamo, Rogerio V. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Trasferetti, B. Claudio [Present address: Superintendencia Regional da Policia Federal em Sao Paulo, Setor Tecnico-Cientifico, Rua Hugo d' Antola 95/10o Andar, Lapa de Baixo, 05038-090 Sao Paulo, SP (Brazil); Davanzo, C.U. [Instituto de Quimica, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Bica de Moraes, Mario A. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil)

    2008-01-15

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V{sub S}) and of the proportion of TEOS in the mixture (X{sub T}) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V{sub S} and X{sub T} are presented.

  18. Characterization of Boron Carbonitride (BCN Thin Films Deposited by Radiofrequency and Microwave Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. A. Mannan

    2008-01-01

    Full Text Available Boron carbonitride (BCN thin films with a thickness of ~4 µ­m were synthesized on Si (100 substrate by radiofrequency and microwave plasma enhanced chemical vapor deposition using trimethylamine borane [(CH33N.BH3] as a molecular precursor. The microstructures of the films were evaluated using field emission scanning electron microscopy (FE-SEM and X-ray diffractometry (XRD. Fourier transform infrared spectroscopy (FT-IR and X-ray photoelectron spectroscopy (XPS were used to analyze the chemical bonding state and composition of the films. It has been observed that the films were adhered well to the silicon substrate even after being broken mechanically. XRD and FE-SEM results showed that the films were x-ray amorphous, rough surface with inhomogeneous microstructure. The micro hardness was measured by nano-indentation tester and was found to be approximately 2~7 GPa. FT-IR suggested the formation of the hexagonal boron carbonitride (h-BCN phase in the films. Broadening of the XPS peaks revealed that B, C and N atoms have different chemical bonds such as B-N, B-C and C-N. The impurity oxygen was detected (13~15 at.% as B-O and/or N-O.

  19. Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

    OpenAIRE

    Chia-Hsun Hsu; In-Cha Hsieh; Chia-Chi Tsou; Shui-Yang Lien

    2013-01-01

    Amorphous-like silicon (a-Si:H-like) thin films are prepared by 27.12 MHz plasma-enhanced chemical vapor deposition technique. The films are applied to p-i-n single junction thin film solar cells with varying i-layer thickness to observe the effects on the short-circuit current density, as well as the open-circuit voltage, fill factor, and conversion efficiency. The most significant experimental result is that Jsc has two different behaviors with increasing the i-layer thickness, which can be...

  20. The protective properties of thin alumina films deposited by metal organic chemical vapour deposition against high-temperature corrosion of stainless steels

    NARCIS (Netherlands)

    Morssinkhof, R.W.J.; Fransen, T.; Heusinkveld, M.M.D.; Gellings, P.J.

    1989-01-01

    Coatings of Al2O3 were deposited on Incoloy 800H and AISI 304 by means of metal organic chemical vapour deposition. Diffusion limitation was the rate-determining step above 420 °C. Below this temperature, the activation energy of the reaction appeared to be 30 kJ mol−1. Coating with Al2O3 increases

  1. Microstructural characterization and chemical compatibility of pulsed laser deposited yttria coatings on high density graphite

    International Nuclear Information System (INIS)

    Yttria coatings were deposited on high density (HD) graphite substrate by pulsed laser deposition method and subsequently annealing in vacuum at 1373 K was carried out to evaluate the thermal stability of the coatings. Yttria deposited on HD graphite samples were exposed to molten LiCl–KCl salt at 873 K for 3 h to evaluate the corrosion behavior of the coating for the purpose of pyrochemical reprocessing applications. The microstructure and the corrosion behavior of the yttria coating deposited on HD graphite in molten LiCl–KCl salt were evaluated by several characterization techniques. X-ray diffraction and Laser Raman patterns confirmed the presence of cubic phase of yttria in the coating. The surface morphology of yttria coating on HD graphite examined by scanning electron microscope and atomic force microscopy revealed the agglomeration of oxide particles and formation of clusters. After annealing at 1373 K, no appreciable grain growth of yttria particles could be observed. X-ray photoelectron spectroscopy analysis was carried out for elemental analysis before and after chemical compatibility test of the coated samples in molten LiCl–KCl salt to identify the corrosive elements present on the yttria coatings. The chemical compatibility and thermal stability of the yttria coating on HD graphite in molten LiCl–KCl salt medium have been established. - Highlights: • Y2O3 coating was deposited on graphite by pulsed laser deposition method. • Chemical compatibility of Y2O3 coating in LiCl–KCl salt at 873 K was studied. • Gibbs free energy change was positive for Y2O3 reaction with Cl2, U and UCl3. • Y2O3 coating exhibited better corrosion performance in molten LiCl–KCl salt

  2. Microstructural characterization and chemical compatibility of pulsed laser deposited yttria coatings on high density graphite

    Energy Technology Data Exchange (ETDEWEB)

    Sure, Jagadeesh [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Mishra, Maneesha [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Tarini, M. [SRM University, Kattankulathur-603 203 (India); Shankar, A. Ravi; Krishna, Nanda Gopala [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Kuppusami, P. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Mallika, C. [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Mudali, U. Kamachi, E-mail: kamachi@igcar.gov.in [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India)

    2013-10-01

    Yttria coatings were deposited on high density (HD) graphite substrate by pulsed laser deposition method and subsequently annealing in vacuum at 1373 K was carried out to evaluate the thermal stability of the coatings. Yttria deposited on HD graphite samples were exposed to molten LiCl–KCl salt at 873 K for 3 h to evaluate the corrosion behavior of the coating for the purpose of pyrochemical reprocessing applications. The microstructure and the corrosion behavior of the yttria coating deposited on HD graphite in molten LiCl–KCl salt were evaluated by several characterization techniques. X-ray diffraction and Laser Raman patterns confirmed the presence of cubic phase of yttria in the coating. The surface morphology of yttria coating on HD graphite examined by scanning electron microscope and atomic force microscopy revealed the agglomeration of oxide particles and formation of clusters. After annealing at 1373 K, no appreciable grain growth of yttria particles could be observed. X-ray photoelectron spectroscopy analysis was carried out for elemental analysis before and after chemical compatibility test of the coated samples in molten LiCl–KCl salt to identify the corrosive elements present on the yttria coatings. The chemical compatibility and thermal stability of the yttria coating on HD graphite in molten LiCl–KCl salt medium have been established. - Highlights: • Y{sub 2}O{sub 3} coating was deposited on graphite by pulsed laser deposition method. • Chemical compatibility of Y{sub 2}O{sub 3} coating in LiCl–KCl salt at 873 K was studied. • Gibbs free energy change was positive for Y{sub 2}O{sub 3} reaction with Cl{sub 2}, U and UCl{sub 3}. • Y{sub 2}O{sub 3} coating exhibited better corrosion performance in molten LiCl–KCl salt.

  3. Cycle Evaluations of Reversible Chemical Reactions for Solar Thermochemical Energy Storage in Support of Concentrating Solar Power Generation Systems

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, Shankar; Palo, Daniel R.; Wegeng, Robert S.

    2010-07-25

    The production and storage of thermochemical energy is a possible route to increase capacity factors and reduce the Levelized Cost of Electricity from concentrated solar power generation systems. In this paper, we present the results of cycle evaluations for various thermochemical cycles, including a well-documented ammonia closed-cycle along with open- and closed-cycle versions of hydrocarbon chemical reactions. Among the available reversible hydrocarbon chemical reactions, catalytic reforming-methanation cycles are considered; specifically, various methane-steam reforming cycles are compared to the ammonia cycle. In some cases, the production of an intermediate chemical, methanol, is also included with some benefit being realized. The best case, based on overall power generation efficiency and overall plant capacity factor, was found to be an open cycle including methane-steam reforming, using concentrated solar energy to increase the chemical energy content of the reacting stream, followed by combustion to generate heat for the heat engine.

  4. Review on advanced of solar assisted chemical heat pump dryer for agriculture produce

    Energy Technology Data Exchange (ETDEWEB)

    Fadhel, M.I. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka (Malaysia); Sopian, K.; Daud, W.R.W.; Alghoul, M.A. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2011-02-15

    Over the past three decades there has been nearly exponential growth in drying R and D on a global scale. Improving of the drying operation to save energy, improve product quality as well as reduce environmental effect remained as the main objectives of any development of drying system. A solar assisted chemical heat pump dryer is a new solar drying system, which have contributed to better cost-effectiveness and better quality dried products as well as saving energy. A solar collector is adapted to provide thermal energy in a reactor so a chemical reaction can take place. This reduces the dependency of the drying technology on fossil energy for heating. In this paper a review on advanced of solar assisted chemical heat pump dryer is presented (the system model and the results from experimental studies on the system performance are discussed). The review of heat pump dryers and solar assisted heat pump dryer is presented. Description of chemical heat pump types and the overview of chemical heat pump dryer are discussed. The combination of chemical heat pump and solar technology gives extra efficiency in utilizing energy. (author)

  5. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  6. Chemical vapor deposition of tungsten (CVD W) as submicron interconnection and via stud

    International Nuclear Information System (INIS)

    Blanket-deposited chemical vapor deposition of tungsten (CVD W) has been developed and implemented in a 4-Mbit DRAM and equivalent submicron VLSI technologies. CVD W was applied as contact stud, interconnect, and interlevel via stud. The technologies have been proven reliable under several reliability stress conditions. Major technical problems involved in CVD W processing, such as adhesion, contact resistance, etchability, and hole fill are discussed. A novel technique that uses TiN as a contact and adhesion layer is presented. This technique has lead to the resolution of the above technical problem and significantly improved the manufacturability of blanket CVD W processes

  7. Preparation of Dispersed Platinum Nanoparticles on a Carbon Nanostructured Surface Using Supercritical Fluid Chemical Deposition

    Directory of Open Access Journals (Sweden)

    Mineo Hiramatsu

    2010-03-01

    Full Text Available We have developed a method of forming platinum (Pt nanoparticles using a metal organic chemical fluid deposition (MOCFD process employing a supercritical fluid (SCF, and have demonstrated the synthesis of dispersed Pt nanoparticles on the surfaces of carbon nanowalls (CNWs, two-dimensional carbon nanostructures, and carbon nanotubes (CNTs. By using SCF-MOCFD with supercritical carbon dioxide as a solvent of metal-organic compounds, highly dispersed Pt nanoparticles of 2 nm diameter were deposited on the entire surface of CNWs and CNTs. The SCF-MOCFD process proved to be effective for the synthesis of Pt nanoparticles on the entire surface of intricate carbon nanostructures with narrow interspaces.

  8. The pyrolytic decomposition of ATSB during chemical vapour deposition of thin alumina films

    OpenAIRE

    Haanappel, V.A.C.; Corbach, van, H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    The effect of the deposition temperature and the partial pressure of water on the thermal decomposition chemistry of aluminium-tri-sec-butoxide (ATSB) during metal organic chemical vapour deposition (MOCVD) is reported. The MOCVD experiments were performed in nitrogen at atmospheric pressure. The partial pressure of ATSB was 0.026 kPa (0.20 mmHg) and that of water was between 0 and 0.026 kPa (0–0.20 mmHg). The pyrolytic decomposition chemistry of ATSB was studied by mass spectrometry at tempe...

  9. Studies on chemical bath deposited zinc sulphide thin films with special optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Ladar, Maria [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); ' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Popovici, Elisabeth-Jeanne [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania)]. E-mail: jennypopovici@yahoo.com; Baldea, Ioan [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); Grecu, Rodica [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Indrea, Emil [National Institute for R and D of Isotopic and Molecular Technology, Donath 71-103, 400293 Cluj-Napoca (Romania)

    2007-05-31

    Adherent and uniform zinc sulphide thin films were deposited on optical glass platelets from chemical bath containing thiourea, zinc acetate, ammonia and sodium citrate. The samples, as they were prepared were investigated by UV-vis absorption/reflection spectroscopy, fluorescence spectroscopy and X-ray diffraction. The effects of growth conditions such as reagent concentration and deposition technique (mono- and multi-layer) on optical and structural properties of the ZnS thin films have been studied. The ability of ZnS films to exhibit luminescent properties has also been investigated.

  10. CdS thin films growth by ammonia free chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Jaber, A.Y.; Alamri, S.N.; Aida, M.S., E-mail: aida_salah2@yahoo.fr

    2012-02-29

    Cadmium Sulfide CdS thin films were deposited by chemical bath deposition technique using ethanolamine as complexing agent instead of commonly used ammonia to avoid its toxicity and volatility during film preparation. In order to investigate the film growth mechanism samples were prepared with different deposition times. A set of substrates were dropped in the same bath and each 30 minutes a sample is withdrawn from the bath, by this way all the obtained films were grown in the same condition. The films structure was analyzed by X rays diffraction. In early stage of growth the obtained films are amorphous, with increasing the deposition time, the films exhibits a pure hexagonal structure with (101) preferential orientation. The film surface morphology was studied by atomic force microscopy. From these observations we concluded that the early growth stage starts in the 3D Volmer-Weber mode, followed by a transition to the Stransky-Krastanov mode with increasing deposition time. The critical thickness of this transition is 120 nm. CdS quantum dots were formed at end of the film growth. The optical transmittance characterization in the UV-Visible range shows that the prepared films have a high transparency ranging from 60 to 80% for photons having wavelength greater than 600 nm. - Highlights: Black-Right-Pointing-Pointer CdS thin films are deposited by ammonia-free chemical bath deposition. Black-Right-Pointing-Pointer Films have hexagonal structure with (101) preferential orientation. Black-Right-Pointing-Pointer Growth begins in the Volmer-Weber mode and changes to the Stransky-Krastanov mode. Black-Right-Pointing-Pointer CdS quantum dots are formed in the late stage of growth.

  11. Growth of TiO2 anti-reflection layer on textured Si (100) wafer substrate by metal-organic chemical vapor deposition method.

    Science.gov (United States)

    Nam, Sang-Hun; Choi, Jin-Woo; Cho, Sang-Jin; Kimt, Keun Soo; Boo, Jin-Hyo

    2011-08-01

    Recently anti-reflective films (AR) have been intensely studied. Particularly for textured silicon solar cells, the AR films can further reduce the reflection of the incident light through trapping the incident light into the cells. In this work, TiO2 anti-reflection films have been grown on the textured Si (100) substrate which is processed in two steps, and the films are deposited using metal-organic chemical vapor deposition (MOCVD) with a precursor of titanium tetra-isopropoxide (TTIP). The effect of the substrate texture and the growth conditions of TiO2 films on the reflectance has been investigated. Pyramid size of textured silicon had approximately 2-9 microm. A well-textured silicon surface can lower the reflectance to 10%. For more reduced reflection, TiO2 anti-reflection films on the textured silicon were deposited at 600 degrees C using titanium tetra-isopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD), and the deposited TiO2 layers were then treated by annealing for 2 h in air at 600 and 1000 degrees C, respectively. In this process, the treated samples by annealing showed anatase and rutile phases, respectively. The thickness of TiO2 films was about 75 +/- 5 nm. The reflectance at specific wavelength can be reduced to 3% in optimum layer. PMID:22103185

  12. Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

    International Nuclear Information System (INIS)

    We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis due to its high heat and mass transfer efficiency and well-controlled flow parameters. Experimental studies of CVD microreactor technology are slow and expensive. Analytical solution of the governing equations is impossible due to the complexity of intertwined non-linear physical and chemical processes. Computer simulation is the most effective tool for design and optimization of microreactors. Our computational fluid dynamics model employs mass, momentum and energy balance equations for a laminar transient flow of a chemically reacting gas mixture at low Reynolds number. Simulation results show the influence of microreactor configuration and process parameters on SiO2 deposition rate and uniformity. We simulated three microreactors with the central channel diameter of 5, 10, 20 micrometers, varying gas flow rate in the range of 5-100 microliters per hour and temperature in the range of 300-800 °C. For each microchannel diameter we found an optimal set of process parameters providing the best quality of deposited material. The model will be used for optimization of the microreactor configuration and technological parameters to facilitate the experimental stage of this research

  13. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization.

    Science.gov (United States)

    Güzeldir, Betül; Sağlam, Mustafa

    2015-11-01

    Different chemical methods such as Successive Ionic Layer Adsorption and Reaction (SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide thin films on the glass substrates. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) spectroscopy and UV-vis spectrophotometry. The XRD and SEM studies showed that all the films exhibit polycrystalline nature and crystallinity of copper selenide thin films prepared with spray pyrolysis greater than spin coating and SILAR methods. From SEM and AFM images, it was observed copper selenide films were uniform on the glass substrates without any visible cracks or pores. The EDX spectra showed that the expected elements exist in the thin films. Optical absorption studies showed that the band gaps of copper selenide thin films were in the range 2.84-2.93 eV depending on different chemical methods. The refractive index (n), optical static and high frequency dielectric constants (ε0, ε∞) values were calculated by using the energy bandgap values for each deposition method. The obtained results from different chemical methods revealed that the spray pyrolysis technique is the best chemical deposition method to fabricate copper selenide thin films. This absolute advantage was lead to play key roles on performance and efficiency electrochromic and photovoltaic devices. PMID:26037495

  14. Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2 chemistry

    Science.gov (United States)

    Wang, Junkang; Bulkin, Pavel; Florea, Ileana; Maurice, Jean-Luc; Johnson, Erik

    2016-07-01

    For the growth of hydrogenated microcrystalline silicon (μc-Si:H) thin films by low temperature plasma-enhanced chemical vapor deposition (PECVD), silicon tetrafluoride (SiF4) has recently attracted interest as a precursor due to the resilient optoelectronic performance of the resulting material and devices. In this work, μc-Si:H films are deposited at high rates (7 Å s‑1) from a SiF4 and hydrogen (H2) gas mixture by matrix-distributed electron cyclotron resonance PECVD (MDECR-PECVD). Increased substrate temperature and moderate ion bombardment energy (IBE) are demonstrated to be of vital importance to achieve high quality μc-Si:H films under such low process pressure and high plasma density conditions, presumably due to thermally-induced and ion-induced enhancement of surface species migration. Two well-defined IBE thresholds at 12 eV and 43 eV, corresponding respectively to SiF+ ion-induced surface and bulk atomic displacement, are found to be determinant to the final film properties, namely the surface roughness, feature size and crystalline content. Moreover, a study of the growth dynamics shows that the primary challenge to producing highly crystallized μc-Si:H films by MDECR-PECVD appears to be the nucleation step. By employing a two-step method to first prepare a highly crystallized seed layer, μc-Si:H films lacking any amorphous incubation layer have been obtained. A crystalline volume fraction of 68% is achieved with a substrate temperature as low as 120 °C, which is of great interest to broaden the process window for solar cell applications.

  15. The effects of chemical oxide on the deposition of tungsten by the silicon reduction of tungsten hexaflouride

    International Nuclear Information System (INIS)

    The effects of thin (chemical) oxide grown during the chemical cleaning of silicon wafers on the silicon reduction of tungsten hexaflouride have been investigated. Unlike tungsten deposition on samples without the chemical oxide, deposition thickness on those with the chemical oxide was found to be substantially thicker. Inspection by cross sectional SEM and TEM revealed the existence of micro-channels penetrating the tungsten film, reaching all the way from the surface of the film to the tungsten/silicon interface. These channels enable tungsten hexaflouride to reach the substrate, thus causing unlimited tungsten growth. Because the silicon surface participates directly in the reaction, it should be expected that the reaction itself be influenced by the chemical treatment of the surface prior to tungsten deposition. Under certain deposition conditions, and for properly prepared silicon surfaces, silicon reduction is known to result in self limiting tungsten deposition

  16. Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition

    OpenAIRE

    Alpuim, P.; Chu, Virginia; Conde, João Pedro

    1999-01-01

    The effect of hydrogen dilution on the optical, transport, and structural properties of amorphous and microcrystalline silicon thin films deposited by hot-wire (HW) chemical vapor deposition and radio-frequency (rf) plasma-enhanced chemical vapor deposition using substrate temperatures (T-sub) of 100 and 25 degrees C is reported. Microcrystalline silicon (mu c-Si:H) is obtained using HW with a large crystalline fraction and a crystallite size of similar to 30 nm for hydrogen dilutions above 8...

  17. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    Science.gov (United States)

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-01

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films. PMID:16448130

  18. Mechanical properties of carbon-modified silicon oxide barrier films deposited by plasma enhanced chemical vapor deposition on polymer substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bieder, A. [Institute of Process Engineering, ETH Zurich, CH-8092 Zurich (Switzerland); Gondoin, V. [Institute of Process Engineering, ETH Zurich, CH-8092 Zurich (Switzerland); Leterrier, Y. [Laboratoire de Technologie des Composites et Polymeres (LTC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Tornare, G. [Laboratoire de Technologie des Composites et Polymeres (LTC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Rohr, Ph. Rudolf von [Institute of Process Engineering, ETH Zurich, CH-8092 Zurich (Switzerland)]. E-mail: vonrohr@ipe.mavt.ethz.ch; Manson, J.-A. E. [Laboratoire de Technologie des Composites et Polymeres (LTC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2007-05-07

    Cohesive and adhesive properties of silicon oxide barrier coatings deposited from an oxygen/hexamethyldisiloxane gas mixture by plasma enhanced chemical vapor deposition, with controlled incorporation of carbon on 12 {mu}m thick polyethylene terephtalate films were investigated. The reactor was equipped with a 2.45 GHz slot antenna plasma source and a 13.56 MHz-biased substrate holder. The two plasma sources were operated separately or in a dual mode. It was found that no or negligible internal stresses were introduced in the silicon oxide coatings as long as the increase of energy experienced by the film was compensated by the densification of the oxide. For a range of process parameters and carbon content on the changes of the crack onset strain, adhesion, and cohesion were found to be similar. Generally a high crack onset strain or good adhesion and cohesion were measured for films with an increased carbon content, although this was obtained at the expense of the gas barrier performance. Promising approaches towards high-barrier thin films with good mechanical integrity are proposed, based on coatings with a gradient in the carbon content and in the mechanical properties, on nano-composite laminates, and on organo-silane treatments.

  19. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    International Nuclear Information System (INIS)

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiNX) and silicon dioxide (SiO2), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiNX buffer layer is wider than SiO2 and the maximum grain size slightly increased

  20. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Park, Joong-Hyun [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Han, Sang-Myeon [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Park, Sang-Geun [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Han, Min-Koo [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Shin, Moon-Young [LTPS Team, AMLCD Business, Samsung Electronics Co., Giheung, Yongin City (Korea, Republic of)

    2006-09-01

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN{sub X}) and silicon dioxide (SiO{sub 2}), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,{lambda}=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN{sub X} buffer layer is wider than SiO{sub 2} and the maximum grain size slightly increased.

  1. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes

    International Nuclear Information System (INIS)

    Silicon (Si) thin films were produced using an aerosol assisted atmospheric pressure chemical vapor deposition technique with liquid hydrosilane precursors cyclopentasilane (CPS, Si5H10) and cyclohexasilane (CHS, Si6H12). Thin films were deposited at temperatures between 300 and 500 °C, with maximum observed deposition rates of 55 and 47 nm/s for CPS and CHS, respectively, at 500 °C. Atomic force microscopic analyses of the films depict smooth surfaces with roughness of 4–8 nm. Raman spectroscopic analysis indicates that the Si films deposited at 300 °C and 350 °C consist of a hydrogenated amorphous Si (a-Si:H) phase while the films deposited at 400, 450, and 500 °C are comprised predominantly of a hydrogenated nanocrystalline Si (nc-Si:H) phase. The wide optical bandgaps of 2–2.28 eV for films deposited at 350–400 °C and 1.7–1.8 eV for those deposited at 450–500 °C support the Raman data and depict a transition from a-Si:H to nc-Si:H. Films deposited at 450 oC possess the highest photosensitivity of 102–103 under AM 1.5G illumination. Based on the growth model developed for other silanes, we suggest a mechanism that governs the film growth using CPS and CHS. - Highlights: • Si films via AA-APCVD are realized using cyclopentasilane (CPS) and cyclohexasilane (CHS). • Low activation energies of CPS and CHS allow Si thin films at low temperatures (300 °C). • High growth rates of 47–55 nm/s were obtained at 500 °C • Near device quality Si thin films with 2–3 orders of photosensitivity • Si thin films via AA-APCVD are amenable to continuous roll-to-roll manufacturing

  2. Analysis of solar chemical processes for hydrogen production from water splitting thermochemical cycles

    International Nuclear Information System (INIS)

    This paper presents a process analysis of ZnO/Zn, Fe3O4/FeO and Fe2O3/Fe3O4 thermochemical cycles as potential high efficiency, large scale and environmentally attractive routes to produce hydrogen by concentrated solar energy. Mass and energy balances allowed estimation of the efficiency of solar thermal energy to hydrogen conversion for current process data, accounting for chemical conversion limitations. Then, the process was optimized by taking into account possible improvements in chemical conversion and heat recoveries. Coupling of the thermochemical process with a solar tower plant providing concentrated solar energy was considered to scale up the system. An economic assessment gave a hydrogen production cost of 7.98$ kg-1 and 14.75$ kg-1 of H2 for, respectively a 55 MWth and 11 MWth solar tower plant operating 40 years

  3. Synthesis and Growth Mechanism of Carbon Filaments by Chemical Vapor Deposition without Catalyst

    Institute of Scientific and Technical Information of China (English)

    Shuhe Liu; Feng Li; Shuo Bai

    2009-01-01

    Carbon filaments with diameter from several to hundreds micrometers were synthesized by chemical vapor deposition of methane without catalyst. The morphology, microstructure and mechanical properties of the carbon filament were investigated by scanning electronic microscopy, optical microscopy, X-ray diffraction and mechanical testing. The results show that the carbon filament is inverted cone shape and grows up along the gas flow direction. The stem of it is formed of annular carbon layers arranged in a tree ring structure while the head is made up of concentrical layers. The tensile strength of the carbon filament is increased after graphitization for the restructuring and growing large of graphene. The growth mechanism of carbon filament was proposed according to the results of two series of experiments with different deposition time and intermittent deposition cycles.

  4. The Synthesized of Carbon Nano tubes from Palm Oil by Topas Atomizer Chemical Vapor Deposition Method

    International Nuclear Information System (INIS)

    This paper focused on preparation of Carbon Nano tubes (CNTs) based on palm oil as a natural resource precursor. The Topas Atomizer was utilized to vapor up the carbon gas into the reaction chamber of Chemical Vapor Deposition (CVD) to yield the CNTs in powder form at the inner wall of the Quartz tube. The purpose of this work was to investigate the effects of deposition temperature from 650 - 850 degree Celsius. The samples characteristics were analyzed by Raman spectroscopy. The results revealed that the increasing of the deposition temperature, the ID/IG ratio decreased from 650 - 850 degree Celsius. The results of Field Emission Scanning Electron Microscopy (FESEM) are also presented. (author)

  5. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm−1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm

  6. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Viswanathan S Saji; Han Cheol Choe

    2010-06-01

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was ∼ 2000 and tan ∼ 0.05.

  7. Synthesis and characterization of chemically deposited CdS thin films without toxic precursors.

    Science.gov (United States)

    Fernández-Pérez, A.; Sandoval-Paz, M. G.

    2016-05-01

    Al doped and undoped CdS thin films (CdS:Al) were deposited on glass, copper and bronze substrates by chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. The structural and optical properties of the CdS films were determined by X-ray diffraction (XRD), scanning electron microscope (SEM), and simultaneous transmission- reflection spectroscopy. It was found that the properties of the films depend on the amount of Al in the growth solutions and deposition time. The increase in Al content in the reaction solution led to a smaller crystallite size and higher energy band gap that varies in the range 2.42 eV - 2.59 eV depending on the Al content.

  8. High quality antireflective ZnS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tec-Yam, S.; Rojas, J.; Rejon, V. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico); Oliva, A.I., E-mail: oliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico)

    2012-10-15

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl{sub 2}, NH{sub 4}NO{sub 3}, and CS(NH{sub 2}){sub 2} were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 Degree-Sign C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300-800 nm wavelength range, and a reflectance below 25% in the UV-Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: Black-Right-Pointing-Pointer High quality ZnS thin films were prepared by chemical bath deposition (CBD). Black-Right-Pointing-Pointer Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. Black-Right-Pointing-Pointer Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  9. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    International Nuclear Information System (INIS)

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 deg. C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs

  11. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Ferroelectric thin films of lead zirconate titanate Pb(ZrxTi1-x)O3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  12. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    Science.gov (United States)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  13. High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

    Science.gov (United States)

    Zhang, W. J.; Jiang, X.; Matsumoto, S.

    2001-12-01

    Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface.

  14. LOW PRESSURE CHEMICAL VAPOR DEPOSITION (CVD) ON OXIDE AND NONOXIDE CERAMIC CUTTING TOOLS

    OpenAIRE

    Layyous, A.; Wertheim, R.

    1989-01-01

    Cutting tools made of Al2O3+TiC, silicon nitride, carbide, and stabilized ZrO2 were coated by chemical vapor deposition (CVD) with a multilayer of TiN, TiCN, TiC and Al2O3 in different combinations. The adhesion of the coated layers to the substrate, and the structure of the layers were investigated by optical microscopy, scanning electron microscopy (SEM) and Auger spectroscopy. This made it possible to analyze the chemical interaction between the substrate and the TiN at 1000°C. The cutting...

  15. The effect of an external electric field on thermally-deposited thin CdS/CdTe-based solar cells

    Science.gov (United States)

    Wan, Ke Ming; Zhang, Yu Jun; Li, Ping; Wang, Gang; Xiang, Jin; Ding, Bao Fu; Alameh, Kamal; Song, Qun Liang

    2015-11-01

    Conventional and inverted thin CdS/CdTe-based solar cells are fabricated using thermal deposition techniques, and their performance under an external electric field is investigated. Results show that both positive and negative electric fields can change the performance of the developed solar cells and that the latter recover to their initial state after switching the external electric field off. Heat treatment experiments confirm the negligible impact of the temperature on the solar cell performance. Transient photocurrent experiments show that the carrier transfer efficiency is modulated directly by an external electric field. By taking into account the CdS nanodipole, the effect of an external electric field on the solar cell performance can be well explained. The results presented in this paper open the way toward the realization of solar cells through carrier separation by an electric field provided by the CdS nanodipoles rather than the solar cell junction.

  16. Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

    Science.gov (United States)

    Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

    2006-01-01

    Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

  17. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  18. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    International Nuclear Information System (INIS)

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects

  19. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  20. Spectroscopy of Individual Single-Walled Carbon Nanotubes and their Synthesis via Chemical Vapor Deposition

    OpenAIRE

    Kiowski, Oliver

    2008-01-01

    A chemical vapor deposition (CVD) reactor was designed, built and used to grow vertically and horizontally aligned carbon nanotube arrays. The as-grown nanotubes were investigated on a single tube level using nearinfrared photoluminescence (PL) microscopy as well as Raman, atomic force and scanning electron microscopy (SEM). For photoluminescence excitation (PLE) spectroscopy of individual, semiconducting single-walled carbon nanotubes (SWNTs), a specialized PL set-up was constructed.

  1. Corrosion resistant chemical vapor deposited coatings for SiC and Si3N4

    OpenAIRE

    Graham, David W

    1993-01-01

    Silicon carbide and silicon nitride turbine engine components are susceptible to hot corrosion by molten sodium sulfate salts which are formed from impurities in the engine's fuel and air intake. Several oxide materials were identified which may be able to protect these components from corrosion and preserve their structural properties. Ta20, coatings were identified as one of the most promising candidates. Thermochemical calculations showed that the chemical vapor deposition(CVD) of tantalum...

  2. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    OpenAIRE

    Sung-Jin Chang; Moon Seop Hyun; Sung Myung; Min-A Kang; Jung Ho Yoo; Lee, Kyoung G.; Bong Gill Choi; Youngji Cho; Gaehang Lee; Tae Jung Park

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from R...

  3. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition

    OpenAIRE

    Friel, I.; Clewes, S L; Dhillon, H. K.; Perkins, N.; Twitchen, D. J.; Scarsbrook, G. A.

    2009-01-01

    In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers, control over surface and bulk crystalline quality is of great importance. Inductively coupled plasma (ICP) etching using an Ar/Cl gas mixture is demonstrated to remove sub-surface damage of mechanically processed surfaces, whilst maintaining macro...

  4. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    P. Haniam

    2014-01-01

    Full Text Available Thin films of cobalt oxides (CoO and Co3O4 fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures.

  5. Fundamental Studies of the Chemical Vapour Deposition of Graphene on Copper

    OpenAIRE

    Lewis, Amanda

    2014-01-01

    The chemical vapour deposition (CVD) of graphene is the most promising route for production of large-area graphene films. However there are still major challenges faced by the field, including control of the graphene coverage, quality, and the number of layers. These challenges can be overcome by developing a fundamental understanding of the graphene growth process. This thesis contributes to the growing body of work on graphene CVD by uniquely exploring the gas phas...

  6. Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition.

    Science.gov (United States)

    Wang, Huan; Zhou, Yu; Wu, Di; Liao, Lei; Zhao, Shuli; Peng, Hailin; Liu, Zhongfan

    2013-04-22

    Substitutionally boron-doped monolayer graphene film is grown on a large scale by using a sole phenylboronic acid as the source in a low-pressure chemical vapor deposition system. The B-doped graphene film is a homogeneous monolayer with high crystalline quality, which exhibits a stable p-type doping behavior with a considerably high room-temperature carrier mobility of about 800 cm(2) V(-1) s(-1) . PMID:23463717

  7. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    OpenAIRE

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C; Jung, W.; Kim, M.; Park, C. -Y.

    2011-01-01

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall trans...

  8. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition

    OpenAIRE

    Ma, Teng; Ren, Wencai; Zhang, Xiuyun; Liu, Zhibo; Gao, Yang; Yin, Li-Chang; Ma, Xiu-Liang; Ding, Feng; Cheng, Hui-Ming

    2013-01-01

    Controlled synthesis of wafer-sized single crystalline high-quality graphene is a great challenge of graphene growth by chemical vapor deposition because of the complicated kinetics at edges that govern the growth process. Here we report the synthesis of single-crystal graphene domains with tunable edges from zigzag to armchair via a growth–etching–regrowth process. Both growth and etching of graphene are strongly dependent on the edge structure. This growth/etching behavior is well explained...

  9. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  10. Growth of Aligned Carbon Nanotubes through Microwave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    王升高; 汪建华; 马志斌; 王传新; 满卫东

    2005-01-01

    Aligned carbon nanotubes (CNTs) were synthesized on glass by microwave plasma chemical vapor deposition (MWPCVD) with a mixture of methane and hydrogen gases at the low temperature of 550 ℃. The experimental results show that both the self-bias potential and the density of the catalyst particles are responsible for the alignment of CNTs. When the catalyst particle density is high enough, strong interactions among the CNTs can inhibit CNTs from growing randomly and result in parallel alignment.

  11. Laser-assisted chemical liquid-phase deposition of metals for micro- and optoelectronics

    OpenAIRE

    Kordás, K. (Krisztián)

    2002-01-01

    Abstract The demands toward the development of simple and cost-effective fabrication methods of metallic structures with high lateral resolution on different substrates - applied in many fields of technology, such as in microelectronics, optoelectronics, micromechanics as well as in sensor and actuator applications - gave the idea to perform this research. Due to its simplicity, laser-assisted chemical liquid-phase deposition (LCLD) has been investigated and applied for the metallization o...

  12. High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

    OpenAIRE

    Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of...

  13. Fluidized bed as a solid precursor delivery system in a chemical vapor deposition reactor

    OpenAIRE

    Vahlas, Constantin; Caussat, Brigitte; Senocq, François; Gladfelter, Wayne L.; Sarantopoulos, Christos; Toro, David; Moersch, Tyler

    2005-01-01

    Chemical vapor deposition (CVD) using precursors that are solids at operating temperatures and pressures, presents challenges due to their relatively low vapor pressures. In addition, the sublimation rates of solid state precursors in fixed bed reactors vary with particle and bed morphology. In a recent patent application, the use of fluidized bed (FB) technology has been proposed to provide high, reliable, and reproducible flux of such precursors in CVD processes. In the present contribution...

  14. Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

    Indian Academy of Sciences (India)

    R H Bari; L A Patil; P P Patil

    2006-10-01

    Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted.

  15. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  16. Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition

    International Nuclear Information System (INIS)

    Highlights: ► Process parameters to control hot-wire CVD of WO3−x are categorized. ► Growth time, oxygen partial pressure, filament and substrate temperature are varied. ► Chemical and crystal structure, optical bandgap and morphology are determined. ► Oxygen partial pressure determines the deposition rate up to as high as 36 μm min−1. ► Nanostructures, viz. wires, crystallites and closed crystallite films, are controllably deposited. - Abstract: We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was varied from 6.0 × 10−6 to 1.0 mbar and the current through the filaments was varied from 4.0 to 9.0 A, which constitutes a filament temperature of 1390–2340 °C in vacuum. It is observed that the deposition rate of the films is predominantly determined by the oxygen partial pressure; it changes from about 1 to about 36,000 nm min−1 in the investigated range. Regardless of the oxygen partial pressure and filament temperature used, thin films with a nanogranular morphology are obtained, provided that the depositions last for 30 min or shorter. The films consist either of amorphous or partially crystallized WO3−x with high averaged transparencies of over 70% and an indirect optical band gap of 3.3 ± 0.1 eV. A prolonged deposition time entails an extended exposure of the films to thermal radiation from the filaments, which causes crystallization to monoclinic WO3 with diffraction maxima due to the (0 0 2), (2 0 0) and (0 2 0) crystallographic planes, furthermore the nanograins sinter and the films exhibit a cone-shaped growth. By simultaneously influencing the surface mobility, by heating the substrates to Tsurface = 700 ± 100 °C, and the deposition rate, a very good control of the morphology of the

  17. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  18. Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ying; Frank Leung-Yuk Lam; HU Xijun; YAN Zifeng

    2006-01-01

    Copper nanorods have been synthesized in mesoporous SBA-15 by a low-temperature metal organic chemical vapor deposition (MOCVD)employing copper (Ⅱ) acetylacetonate, Cu(acac)2,and hydrogen as a precursor and reactant gas, respectively. The hydrogen plays an important role in chemical reduction of oganometallic precursor which enhances mass transfer in the interior of the SBA-15 porous substrate. Such copper nanostructures are of great potentials in the semiconductor due to their unusual optical, magnetic and electronic properties.In addition, it has been found that chemically modifying the substrate surface by carbon deposition is crucial to such synthesis of copper nanostructures in the interior of the SBA-15, which is able to change the surface properties of SBA-15 from hydrophilic to hydrophobic to promote the adsorption of organic cupric precursor. It has also been found that the copper nanoparticles deposited on the external surface are almost eliminated and the copper nanorods are more distinct while the product was treated with ammonia. This approach could be achieved under a mild condition: a low temperature (400℃) and vacuum (2 kPa) which is extremely milder than the conventional method. It actually sounds as a foundation which is the first time to synthesize a copper nanorod at a mild condition of a low reaction temperature and pressure.

  19. Synthesis and modeling of uniform complex metal oxides by close-proximity atmospheric pressure chemical vapor deposition.

    Science.gov (United States)

    Hoye, Robert L Z; Muñoz-Rojas, David; Musselman, Kevin P; Vaynzof, Yana; MacManus-Driscoll, Judith L

    2015-05-27

    A close-proximity atmospheric pressure chemical vapor deposition (AP-CVD) reactor is developed for synthesizing high quality multicomponent metal oxides for electronics. This combines the advantages of a mechanically controllable substrate-manifold spacing and vertical gas flows. As a result, our AP-CVD reactor can rapidly grow uniform crystalline films on a variety of substrate types at low temperatures without requiring plasma enhancements or low pressures. To demonstrate this, we take the zinc magnesium oxide (Zn(1-x)Mg(x)O) system as an example. By introducing the precursor gases vertically and uniformly to the substrate across the gas manifold, we show that films can be produced with only 3% variation in thickness over a 375 mm(2) deposition area. These thicknesses are significantly more uniform than for films from previous AP-CVD reactors. Our films are also compact, pinhole-free, and have a thickness that is linearly controllable by the number of oscillations of the substrate beneath the gas manifold. Using photoluminescence and X-ray diffraction measurements, we show that for Mg contents below 46 at. %, single phase Zn(1-x)Mg(x)O was produced. To further optimize the growth conditions, we developed a model relating the composition of a ternary oxide with the bubbling rates through the metal precursors. We fitted this model to the X-ray photoelectron spectroscopy measured compositions with an error of Δx = 0.0005. This model showed that the incorporation of Mg into ZnO can be maximized by using the maximum bubbling rate through the Mg precursor for each bubbling rate ratio. When applied to poly(3-hexylthiophene-2,5-diyl) hybrid solar cells, our films yielded an open-circuit voltage increase of over 100% by controlling the Mg content. Such films were deposited in short times (under 2 min over 4 cm(2)). PMID:25939729

  20. Silica-titania composite aerogel photocatalysts by chemical liquid deposition of titania onto nanoporous silica scaffolds.

    Science.gov (United States)

    Zu, Guoqing; Shen, Jun; Wang, Wenqin; Zou, Liping; Lian, Ya; Zhang, Zhihua

    2015-03-11

    Silica-titania composite aerogels were synthesized by chemical liquid deposition of titania onto nanoporous silica scaffolds. This novel deposition process was based on chemisorption of partially hydrolyzed titanium alkoxides from solution onto silica nanoparticle surfaces and subsequent hydrolysis and condensation to afford titania nanoparticles on the silica surface. The titania is homogeneously distributed in the silica-titania composite aerogels, and the titania content can be effectively controlled by regulating the deposition cycles. The resultant composite aerogel with 15 deposition cycles possessed a high specific surface area (SSA) of 425 m(2)/g, a small particle size of 5-14 nm, and a large pore volume and pore size of 2.41 cm(3)/g and 18.1 nm, respectively, after heat treatment at 600 °C and showed high photocatalytic activity in the photodegradation of methylene blue under UV-light irradiation. Its photocatalytic activity highly depends on the deposition cycles and heat treatment. The combination of small particle size, high SSA, and enhanced crystallinity after heat treatment at 600 °C contributes to the excellent photocatalytic property of the silica-titania composite aerogel. The higher SSAs compared to those of the reported titania aerogels (aerogels promising candidates as photocatalysts.

  1. Self-assembly of octadecyltrichlorosilane monolayers on silicon-based substrates by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dong Jinping [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Wang Anfeng [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Ng, K.Y. Simon [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Mao Guangzhao [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States)]. E-mail: gzmao@eng.wayne.edu

    2006-12-05

    Increasingly, organosilane self-assembled monolayers (SAMs) are used to modify the surfaces of silicon-based sensors and atomic force microscope (AFM) probes. Organosilane SAMs are preferred due to their fast and easy preparation, stability, and applicability to a wide range of substrates. The traditional dip coating method from solution often yields ill-defined particulate aggregates on the two-dimensional SAM. The presence of such three-dimensional aggregates seriously reduces the performance of miniaturized biosensor devices and AFM probes. It is difficult to control the amount of water in solution-based deposition. This paper describes a chemical vapor deposition (CVD) method to deposit octadecyltrichlorosilane (OTS) monolayers on silicon wafers and AFM probes under vacuum condition. OTS coated surfaces with static water contact angle ranging from 20{sup o} to 107{sup o} can be obtained by controlling the deposition conditions. The silicon substrates and AFM probes after CVD are characterized by AFM, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and contact angle goniometry. The OTS monolayer is in a uniform low-density state below 65%. Above 65%, densely packed crystalline-like domains start to form. It takes 24 h to reach the adsorption saturation. The time span in the CVD deposition is much longer than the solution case and thus allowing precise variation of the substrate hydrophobicity for biosensor applications.

  2. Incorporation of Nitrogen into Amorphous Carbon Films Produced by Surface-Wave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    Wu Yuxiang(吴玉祥); Zhu Xiaodong(朱晓东); Zhan Rujuan(詹如娟)

    2003-01-01

    In order to study the influence of nitrogen incorporated into amorphous carbon films,nitrogenated amorphous carbon films have been deposited by using surface wave plasma chemical vapor deposition under various ratios of N2/CH4 gas flow. Optical emission spectroscopy has been used to monitor plasma features near the deposition zone. After deposition, the samples are checked by Raman spectroscopy and x-ray photo spectroscopy (XPS). Optical emission intensities of CH and N atom in the plasma are found to be enhanced with the increase in the N2/CH4 gas flow ratio, and then reach their maximums when the N2/CH4 gas flow ratio is 5%. A contrary variation is found in Raman spectra of deposited films. The intensity ratio of the D band to the G band (ID/IG) and the peak positions of the G and D bands all reach their minimums when the N2/CH4 gas flow ratio is 5%. These show that the structure of amorphous carbon films has been significantly modified by introduction of nitrogen.

  3. Latest innovations in large area web coating technology via plasma enhanced chemical vapor deposition source technology

    International Nuclear Information System (INIS)

    In this article, the authors discuss the latest results of our development of large area plasma enhanced chemical vapor deposition (PECVD) source technologies for flexible substrates. A significant challenge is the economical application of thin films for use as vapor barriers, transparent conductive oxides, and optical interference thin films. Here at General Plasma the authors have developed two innovative PECVD source technologies that provide an economical alternative to low temperature sputtering technologies and enable some thin film materials not accessible by sputtering. The Penning Discharge Plasma (PDP trade mark sign ) source is designed for high rate direct PECVD deposition on insulating, temperature sensitive web [J. Modocks, Proceedings of the Society of Vacuum Coaters, 2003 (unpublished), p. 187]. This technology has been utilized to deposit SiO2 and SiC:H for barrier applications [V. Shamamian et al. Proceedings of the Flexible Displays and Manufacturing Conferrence, 2006 (unpublished)]. The Plasma Beam Source (PBS trade mark sign ) is a remote plasma source that is more versatile for deposition on not only insulating flexible substrates but also conductive or rigid substrates for deposition of thin films that are sensitive to the high ion bombardment flux inherent to the PDP trade mark sign technology. The authors have developed PBS thin film processes in our laboratory for deposition of SiO2, SiC:O, SiN:C, SiN:H, ZnO, FeOx, and Al2O3. [M. A. George, Conference Proceedings of the Association of Industrial Metallizers, Coaters, and Laminators (AIMCAL), 2007 (unpublished)]. The authors discuss the design of the patented sources, plasma physics, and chemistry of the deposited thin films.

  4. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  5. Temporal and spatial trends of chemical composition of wet deposition samples collected in Austria

    Science.gov (United States)

    Schreiner, Elisabeth; Kasper-Giebl, Anne; Lohninger, Hans

    2016-04-01

    Triggered by the occurrence of acid rain a sampling network for the collection of wet deposition samples was initiated in Austria in the early 1980s. Now the data set covers a time period of slightly more than 30 years for the stations being operable since the beginning. Sampling of rain water and snow was and is performed with Wet and Dry Only Samplers (WADOS) on a daily basis. Chemical analysis of rain water and snow samples comprised anions (chloride, nitrate, sulfate) and cations (sodium, ammonium, potassium, calcium and magnesium) as well as pH and electrical conductivity. Here we evaluate and discuss temporal trends of both, ion concentrations and wet deposition data for twelve sampling stations, which were operable for most of the observation period of 30 years. As expected concentrations and wet deposition loads of sulfate and acidity decreased significantly during the last three decades - which is also reflected by a strong decrease of sulfur emissions in Austria and neighboring countries. Regarding nitrate the decrease of concentrations and wet deposition loads is less pronounced. Again this is in accordance with changes in emission data. In case of ammonium even less stations showed a significant decrease of annual average concentrations and depositions. Reasons for that might be twofold. On one hand emissions of ammonia did not decrease as strongly as e.g. sulfur emissions. Furthermore local sources will be more dominant and can influence the year to year variability. Seasonality of ion concentrations and deposition loads were investigated using Fourier analysis. Sulfate, nitrate, ammonium, acidity and also precipitation amount showed characteristic seasonal patterns for most of the sites and for concentrations as well as deposition loads. However the maxima in ion concentrations and deposition loads were observed during different times of the year. Concentrations of basic cations and chloride, on the contrary, hardly showed any seasonality. However, as

  6. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

    OpenAIRE

    Cong Chen; Yu Cheng; Qilin Dai; Hongwei Song

    2015-01-01

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp lay...

  7. Parameters influencing the deposition of methylammonium lead halide iodide in hole conductor free perovskite-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, Bat-El; Gamliel, Shany; Etgar, Lioz, E-mail: lioz.etgar@mail.huji.ac.il [Institute of Chemistry, Casali Center for Applied Chemistry, The Hebrew University of Jerusalem, Jerusalem 90400 (Israel)

    2014-08-01

    Perovskite is a promising light harvester for use in photovoltaic solar cells. In recent years, the power conversion efficiency of perovskite solar cells has been dramatically increased, making them a competitive source of renewable energy. An important parameter when designing high efficiency perovskite-based solar cells is the perovskite deposition, which must be performed to create complete coverage and optimal film thickness. This paper describes an in-depth study on two-step deposition, separating the perovskite deposition into two precursors. The effects of spin velocity, annealing temperature, dipping time, and methylammonium iodide concentration on the photovoltaic performance are studied. Observations include that current density is affected by changing the spin velocity, while the fill factor changes mainly due to the dipping time and methylammonium iodide concentration. Interestingly, the open circuit voltage is almost unaffected by these parameters. Hole conductor free perovskite solar cells are used in this work, in order to minimize other possible effects. This study provides better understanding and control over the perovskite deposition through highly efficient, low-cost perovskite-based solar cells.

  8. Parameters influencing the deposition of methylammonium lead halide iodide in hole conductor free perovskite-based solar cells

    Directory of Open Access Journals (Sweden)

    Bat-El Cohen

    2014-08-01

    Full Text Available Perovskite is a promising light harvester for use in photovoltaic solar cells. In recent years, the power conversion efficiency of perovskite solar cells has been dramatically increased, making them a competitive source of renewable energy. An important parameter when designing high efficiency perovskite-based solar cells is the perovskite deposition, which must be performed to create complete coverage and optimal film thickness. This paper describes an in-depth study on two-step deposition, separating the perovskite deposition into two precursors. The effects of spin velocity, annealing temperature, dipping time, and methylammonium iodide concentration on the photovoltaic performance are studied. Observations include that current density is affected by changing the spin velocity, while the fill factor changes mainly due to the dipping time and methylammonium iodide concentration. Interestingly, the open circuit voltage is almost unaffected by these parameters. Hole conductor free perovskite solar cells are used in this work, in order to minimize other possible effects. This study provides better understanding and control over the perovskite deposition through highly efficient, low-cost perovskite-based solar cells.

  9. Parameters influencing the deposition of methylammonium lead halide iodide in hole conductor free perovskite-based solar cells

    International Nuclear Information System (INIS)

    Perovskite is a promising light harvester for use in photovoltaic solar cells. In recent years, the power conversion efficiency of perovskite solar cells has been dramatically increased, making them a competitive source of renewable energy. An important parameter when designing high efficiency perovskite-based solar cells is the perovskite deposition, which must be performed to create complete coverage and optimal film thickness. This paper describes an in-depth study on two-step deposition, separating the perovskite deposition into two precursors. The effects of spin velocity, annealing temperature, dipping time, and methylammonium iodide concentration on the photovoltaic performance are studied. Observations include that current density is affected by changing the spin velocity, while the fill factor changes mainly due to the dipping time and methylammonium iodide concentration. Interestingly, the open circuit voltage is almost unaffected by these parameters. Hole conductor free perovskite solar cells are used in this work, in order to minimize other possible effects. This study provides better understanding and control over the perovskite deposition through highly efficient, low-cost perovskite-based solar cells

  10. Microcrystalline n-i-p solar cells deposited at 10 Å/s by VHF-GD

    OpenAIRE

    Feitknecht, Luc; Kluth, O.; Ziegler, Y.; Niquille, X.; Torres, Pedro; Meier, Johannes; Wyrsch, Nicolas; Shah, Arvind

    2008-01-01

    In the present paper, we report on thin-film microcrystalline silicon solar cells grown at high deposition rates on back-reflectors with optimised light-scattering capabilities. A single-junction solar cell with a conversion efficiency of η=7.8% (2 μm thickness) was fabricated at a deposition rate of 7.4 Å/s. Another microcrystalline cell was successfully implemented in a “micromorph” tandem (i.e. a microcrystalline/amorphous tandem cell with n–i–p–n–i–p configuration); the resulting initial ...

  11. Solar desalination, brine and fine chemicals - a preliminary report

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Nagarajan, R.

    Solar stills put into operation by taking known quantities of sea water of different salinities varying from 27. 75 - 36.27 x 103 during April-May 1990, indicated fresh water yield of 55-68% (av. 64) The volumes of brine as well as those of bitterns...

  12. Solar desalination, brine and fine chemicals - a preliminary report

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Nagarajan, R.

    Solar stills put into operation by taking known quantities of sea water of different salinities varying from 27.75-36.27 x 10 super(3) during April-May 1990, indicated fresh water yield of 55-68% (av. 64). The volumes of brine as well as those...

  13. Physical Property Characterization of Pb2+-Doped CdS Nanofilms Deposited by Chemical-Bath Deposition at Low Temperature

    Science.gov (United States)

    Díaz-Reyes, J.; Contreras-Rascón, J. I.; Galván-Arellano, M.; Arias-Cerón, J. S.; Gutiérrez-Arias, J. E. M.; Flores-Mena, J. E.; Morín-Castillo, M. M.

    2016-08-01

    Pb2 +-doped CdS nanofilms are prepared using the growth technique chemical bath deposition (CBD) under optimum conditions lead acetate at the reservoir temperature of 20 ± 2 °C. The Pb2+ molar concentration was in the range 0.0 ≤ x ≤ 0.19.67, which was determined by energy-dispersive X-ray spectroscopy (EDS). The X-ray diffraction results show that the films are of PbS-CdS composites with individual CdS and PbS planes. The X-ray diffraction (XRD) analysis and Raman scattering reveal that CdS-deposited films showed the zincblende (ZB) crystalline phase. The average grain size of the CdS films ranged from 1.21 to 6.67 nm that was determined by the Debye-Scherrer equation from ZB (111) direction, and it was confirmed by high-resolution transmission electron microscopy (HRTEM). Raman scattering shows that the lattice dynamics is characteristic of bimodal behaviour and the multipeaks adjust of the first optical longitudinal mode for the Pb2+-doped CdS denotes the Raman shift of the characteristic peak in the range of 305-298 cm-1 of the CdS crystals, which is associated with the lead ion incorporation. The films exhibit three direct bandgaps, ~2.44 eV attributed to CdS; the other varies continuously from 1.67 to 1.99 eV and another disappears as Pb2+ molar fraction increases.

  14. Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Alloying elemental high-k metal oxides (such as HfO2) with other metals is seen as an effective method of controlling the properties of the dielectric based on the concentration of cations in the mixture; in particular, mixing HfO2 with Al2O3, and forming hafnium aluminate layers which will still have a relatively high dielectric constant (typically k ∼ 15) and remain amorphous up to high processing temperatures. This paper summarizes the results of physical and electrical characterisation of hafnium aluminate (HfAl xO y) films prepared by Metal-Organic Chemical Vapour Deposition. We show how, using ultraviolet-visible, single angle ellipsometry, the thickness and composition of the deposited and of the transition/interfacial layers can be extracted, and further used for the estimation of the relative dielectric constant. Moreover, a methodology for extracting the band gap of these materials and its dependence on the aluminium concentration is presented. This has been achieved by using a simple parameterization model (Wemple-Di Domenico) to account for the optical dispersion of the films. Preparing thin films with a relatively high dielectric constant and with an amorphous structure even at high processing temperatures, are not the only requirements to be achieved when such layers are to be used as gate dielectrics. The electrical characteristics - such as leakage current, density of interface states, fixed charge in the oxide - are extremely important. The results obtained through capacitance-voltage and current-voltage measurements show the possibility of adjusting the relative dielectric constant of the layers in a wide range (9-16), when the aluminium concentration varies between 4% and 38%. The minimum leakage current occurs for Al concentrations up to 9%. The thinner films show Fowler-Nordheim conduction even at higher concentrations of Al into the film, while thicker films show a higher hysteresis due to an increased number of slow trapping centres in the

  15. Effect of Ph on the Physical Properties of ZnIn2Se4 Thin Films Grown by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    P. Babu

    2011-01-01

    Full Text Available ZnIn2Se4 (ZIS due to its potential applications in various fields, particularly as a buffer layer in the fabrication of heterojuction solar cells. In the present work, thin films of ZIS have been synthesized by a simple and economic method, chemical bath deposition at different pH values that vary from 9 to 11. The deposition was carried out for a fixed bath temperature (Tb of 90 °C and constant reaction time of 60 min. Ammonia and hydrazine hydrate were used as complexing agents. The chemical and physical properties of the deposited ZIS films were analyzed using appropriate techniques. The X-ray diffraction analysis revealed that the deposited films were polycrystalline and showed (112 peak as the preferred orientation. Scanning electron micrographs revealed that the samples had large number of granule like particles in different sizes. The optical transmittance of these samples was found to be > 75 % in the visible region and the evaluated energy band gap varied from 2.15 eV to 2.64 eV with the change of pH value in the range, 9 - 11. The detailed study of these results were presented and discussed.

  16. Supercritical fluid chemical deposition of Pd nanoparticles on magnesium–scandium alloy for hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Couillaud, Samuel; Kirikova, Marina [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Zaïdi, Warda; Bonnet, Jean-Pierre [LRCS, UMR CNRS 6007, 33 rue Saint-Leu, 80039-Amiens (France); Marre, Samuel; Aymonier, Cyril [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Zhang, Junxian; Cuevas, Fermin; Latroche, Michel [ICMPE, CNRS-UPEC, UMR 7182, 2-8 rue Henri Dunant, 94320-Thiais (France); Aymard, Luc [LRCS, UMR CNRS 6007, 33 rue Saint-Leu, 80039-Amiens (France); Bobet, Jean-Louis, E-mail: bobet@icmcb-bordeaux.cnrs.fr [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2013-10-15

    Highlights: •Nanoparticles of Pd were deposed on the binary compound Mg{sub 0.65}Sc{sub 0.35} using the Supercritical Fluid Chemical Deposition (SFCD) method. •Numerous parameters were tested and optimized in order to obtain a homogeneous deposition. •At the first step, Pd@Mg0.65Sc0.35 decomposes into ScH{sub 2} and MgH{sub 2} under hydrogen pressure (1 MPa) at 330 °C. •The mixture, after decomposition absorbs hydrogen reversibly on Mg/MgH{sub 2} couple with good kinetics. -- Abstract: The deposition of Pd nanoparticles on the binary compound Mg{sub 0.65}Sc{sub 0.35} using the Supercritical Fluid Chemical Deposition (SFCD) method was performed. There, the SFCD operating parameters (co-solvent, temperature, CO{sub 2} and hydrogen pressure, reaction time) have been optimized to obtain homogeneous deposition of Pd nanoparticles (around 10 nm). The hydrogenation properties of the optimized Pd@Mg{sub 0.65}Sc{sub 0.35} material were determined and compared to those of Mg{sub 0.65}Sc{sub 0.35}Pd{sub 0.024}. The latter compound forms at 300 °C and 1 MPa of H{sub 2} a hydride that crystallizes in the fluorite structure, absorbs reversibly 1.5 wt.% hydrogen and exhibits fast kinetics. In contrast, Pd@Mg{sub 0.65}Sc{sub 0.35} compound decomposes into ScH{sub 2} and MgH{sub 2} during hydrogen absorption under the same conditions. However, reversible sorption reaches 3.3 wt.% of hydrogen while keeping good kinetics. The possible roles of Pd on the hydrogen-induced alloy decomposition are discussed.

  17. Relation of lifetime to surface passivation for atomic-layer-deposited Al2O3 on crystalline silicon solar cell

    International Nuclear Information System (INIS)

    Highlights: • We investigated the relation of potassium contamination on Si solar wafer to lifetime. • We deposited Al2O3 layer by atomic layer deposition (ALD) on Si solar wafer after several cleaning process. • Potassium can be left on Si surface by incomplete cleaning process and degrade the Al2O3 passivation quality. - Abstract: We investigated the relation of potassium contamination on a crystalline silicon (c-Si) surface after potassium hydroxide (KOH) etching to the lifetime of the c-Si solar cell. Alkaline solution was employed for saw damage removal (SDR), texturing, and planarization of a textured c-Si solar wafer prior to atomic layer deposition (ALD) Al2O3 growth. In the solar-cell manufacturing process, ALD Al2O3 passivation is utilized to obtain higher conversion efficiency. ALD Al2O3 shows excellent surface passivation, though minority carrier lifetime varies with cleaning conditions. In the present study, we investigated the relation of potassium contamination to lifetime in solar-cell processing. The results showed that the potassium-contaminated samples, due to incomplete cleaning of KOH, had a short lifetime, thus establishing that residual potassium can degrade Al2O3 surface passivation

  18. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Highlights: • Carbon nitride films were prepared by using radio frequency plasma enhanced chemical vapour deposition system by altering the electrode distance. • The effect of electrode distance on surface morphology, surface roughness, chemical bonding and hydrophobic behaviour has been studied. • Hydrophobic behaviour were studied by measuring contact angle and calculating surface energy. • CNx nanostructures show super-hydrophobic behaviour. • We report a tunable transition of hydrophilic to super-hydrophobic behaviour of film as electrode distance is reduced. - Abstract: Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films’ structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films’ surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of C=N to C=C and N−H to O−H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films’ characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface

  19. A new sampler for collecting separate dry and wet atmospheric depositions of trace organic chemicals

    Science.gov (United States)

    Waite, Don T.; Cessna, Allan J.; Gurprasad, Narine P.; Banner, James

    Studies conducted in Saskatchewan and elsewhere have demonstrated the atmospheric transport of agricultural pesticides and other organic contaminants and their deposition into aquatic ecosystems. To date these studies have focused on ambient concentrations in the atmosphere and in wet precipitation. To measure the dry deposition of organic chemicals, a new sampler was designed which uses a moving sheet of water to passively trap dry particles and gasses. The moving sheet of water drains into a reservoir and, during recirculation through the sampler, is passed through an XAD-2 resin column which adsorbs the trapped organic contaminants. All surfaces which contact the process water are stainless steel or Teflon. Chemicals collected can be related to airborne materials depositing into aquatic ecosystems. The sampler has received a United States patent (number 5,413,003 - 9 May 1996) with the Canadian patent pending. XAD-2 resin adsorption efficiencies for 10 or 50 μg fortifications of ten pesticides ranged from 76% for atrazine (2-chloro-4-ethylamino-6-isopropylamino- S-triazine) to 110% for triallate [ S-(2,3,3-trichloro-2-phenyl)bis(1-methylethyl)carbamothioate], dicamba (2-methoxy-3,6-dichlorobenzoic acid) and toxaphene (chlorinated camphene mixture). Field testing using duplicate samplers showed good reproducibility and amounts trapped were consistent with those from high volume and bulk pan samplers located on the same site. Average atmospheric dry deposition rates of three chemicals, collected for 5 weeks in May and June, were: dicamba, 69 ng m -2 da -1; 2,4-D (2,4-dichlorophenoxyacetic acid), 276 ng m -2 da -1: and, γ-HCH ( γ-1, 2, 3, 4, 5, 6-hexachlorocyclohexane), 327 ng m -2 da -1.

  20. Performance analysis of solar-assisted chemical heat-pump dryer

    Energy Technology Data Exchange (ETDEWEB)

    Fadhel, M.I. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450, Melaka (Malaysia); Sopian, K.; Daud, W.R.W. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2010-11-15

    A solar-assisted chemical heat-pump dryer has been designed, fabricated and tested. The performance of the system has been studied under the meteorological conditions of Malaysia. The system consists of four main components: solar collector (evacuated tubes type), storage tank, solid-gas chemical heat pump unit and dryer chamber. A solid-gas chemical heat pump unit consists of reactor, condenser and evaporator. The reaction used in this study (CaCl2-NH{sub 3}). A simulation has been developed, and the predicted results are compared with those obtained from experiments. The maximum efficiency for evacuated tubes solar collector of 80% has been predicted against the maximum experiment of 74%. The maximum values of solar fraction from the simulation and experiment are 0.795 and 0.713, respectively, whereas the coefficient of performance of chemical heat pump (COP{sup h}) maximum values 2.2 and 2 are obtained from simulation and experiments, respectively. The results show that any reduction of energy at condenser as a result of the decrease in solar radiation will decrease the coefficient of performance of chemical heat pump as well as decrease the efficiency of drying. (author)

  1. Solar energy deposition rates in the mesosphere derived from airglow measurements: Implications for the ozone model deficit problem

    Science.gov (United States)

    Mlynczak, Martin G.; Garcia, Rolando R.; Roble, Raymond G.; Hagan, Maura

    2000-07-01

    We derive rates of energy deposition in the mesosphere due to the absorption of solar ultraviolet radiation by ozone. The rates are derived directly from measurements of the 1.27-μm oxygen dayglow emission, independent of knowledge of the ozone abundance, the ozone absorption cross sections, and the ultraviolet solar irradiance in the ozone Hartley band. Fifty-six months of airglow data taken between 1982 and 1986 by the near-infrared spectrometer on the Solar-Mesosphere Explorer satellite are analyzed. The energy deposition rates exhibit altitude-dependent annual and semi-annual variations. We also find a positive correlation between temperatures and energy deposition rates near 90 km at low latitudes. This correlation is largely due to the semiannual oscillation in temperature and ozone and is consistent with model calculations. There is also a suggestion of possible tidal enhancement of this correlation based on recent theoretical and observational analyses. The airglow-derived rates of energy deposition are then compared with those computed by multidimensional numerical models. The observed and modeled deposition rates typically agree to within 20%. This agreement in energy deposition rates implies the same agreement exists between measured and modeled ozone volume mixing ratios in the mesosphere. Only in the upper mesosphere at midlatitudes during winter do we derive energy deposition rates (and hence ozone mixing ratios) consistently and significantly larger than the model calculations. This result is contrary to previous studies that have shown a large model deficit in the ozone abundance throughout the mesosphere. The climatology of solar energy deposition and heating presented in this paper is available to the community at the Middle Atmosphere Energy Budget Project web site at http://heat.budget.gats.inc.com.

  2. Solar Energy Deposition Rates in the Mesosphere Derived from Airglow Measurements: Implications for the Ozone Model Deficit Problem

    Science.gov (United States)

    Mlynczak, Martin G.; Garcia, Rolando R.; Roble, Raymond G.; Hagan, Maura

    2000-01-01

    We derive rates of energy deposition in the mesosphere due to the absorption of solar ultraviolet radiation by ozone. The rates are derived directly from measurements of the 1.27-microns oxygen dayglow emission, independent of knowledge of the ozone abundance, the ozone absorption cross sections, and the ultraviolet solar irradiance in the ozone Hartley band. Fifty-six months of airglow data taken between 1982 and 1986 by the near-infrared spectrometer on the Solar-Mesosphere Explorer satellite are analyzed. The energy deposition rates exhibit altitude-dependent annual and semi-annual variations. We also find a positive correlation between temperatures and energy deposition rates near 90 km at low latitudes. This correlation is largely due to the semiannual oscillation in temperature and ozone and is consistent with model calculations. There is also a suggestion of possible tidal enhancement of this correlation based on recent theoretical and observational analyses. The airglow-derived rates of energy deposition are then compared with those computed by multidimensional numerical models. The observed and modeled deposition rates typically agree to within 20%. This agreement in energy deposition rates implies the same agreement exists between measured and modeled ozone volume mixing ratios in the mesosphere. Only in the upper mesosphere at midlatitudes during winter do we derive energy deposition rates (and hence ozone mixing ratios) consistently and significantly larger than the model calculations. This result is contrary to previous studies that have shown a large model deficit in the ozone abundance throughout the mesosphere. The climatology of solar energy deposition and heating presented in this paper is available to the community at the Middle Atmosphere Energy Budget Project web site at http://heat-budget.gats-inc.com.

  3. Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

    2015-09-15

    A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

  4. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

    2015-05-20

    In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

  5. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  6. Zr-ZrO2 cermet solar coatings designed by modelling calculations and deposited by dc magnetron sputtering

    Science.gov (United States)

    Zhang, Qi-Chu; Hadavi, M. S.; Lee, K.-D.; Shen, Y. G.

    2003-03-01

    High solar performance Zr-ZrO2 cermet solar coatings were designed using a numerical computer model and deposited experimentally. The layer thickness and Zr metal volume fraction for the Zr-ZrO2 cermet solar selective coatings on a Zr or Al reflector with a surface ZrO2 or Al2O3 anti-reflection layer were optimized to achieve maximum photo-thermal conversion efficiency at 80°C under concentration factors of 1-20 using the downhill simplex method in multi-dimensions in the numerical calculation. The dielectric function and the complex refractive index of Zr-ZrO2 cermet materials were calculated using Sheng's approximation. Optimization calculations show that Al2O3/Zr-ZrO2/Al solar coatings with two cermet layers and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimized Al2O3/Zr-ZrO2/Al solar coating film with two cermet layers has a high solar absorptance value of 0.97 and low hemispherical emittance value of 0.05 at 80°C for a concentration factor of 2. The Al2O3/Zr-ZrO2/Al solar selective coatings with two cermet layers were deposited using dc magnetron sputtering technology. During the deposition of Zr-ZrO2 cermet layer, a Zr metallic target was run in a gas mixture of argon and oxygen. By control of oxygen flow rate the different metal volume fractions in the cermet layers were achieved using dc reactive sputtering. A solar absorptance of 0.96 and normal emittance of 0.05 at 80°C were achieved.

  7. Zr-ZrO{sub 2} cermet solar coatings designed by modelling calculations and deposited by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Qichu [School of Physics, University of Sydney, NSW 2006 (Australia); Hadavi, M S [School of Physics, University of Sydney, NSW 2006 (Australia); Lee, K-D [School of Physics, University of Sydney, NSW 2006 (Australia); Shen, Y G [Department of Manufacturing Engineering and Engineering Management, City University of Hong Kong, Hong Kong (China)

    2003-03-21

    High solar performance Zr-ZrO{sub 2} cermet solar coatings were designed using a numerical computer model and deposited experimentally. The layer thickness and Zr metal volume fraction for the Zr-ZrO{sub 2} cermet solar selective coatings on a Zr or Al reflector with a surface ZrO{sub 2} or Al{sub 2}O{sub 3} anti-reflection layer were optimized to achieve maximum photo-thermal conversion efficiency at 80 deg. C under concentration factors of 1-20 using the downhill simplex method in multi-dimensions in the numerical calculation. The dielectric function and the complex refractive index of Zr-ZrO{sub 2} cermet materials were calculated using Sheng's approximation. Optimization calculations show that Al{sub 2}O{sub 3}/Zr-ZrO{sub 2}/Al solar coatings with two cermet layers and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimized Al{sub 2}O{sub 3}/Zr-ZrO{sub 2}/Al solar coating film with two cermet layers has a high solar absorptance value of 0.97 and low hemispherical emittance value of 0.05 at 80 deg. C for a concentration factor of 2. The Al{sub 2}O{sub 3}/Zr-ZrO{sub 2}/Al solar selective coatings with two cermet layers were deposited using dc magnetron sputtering technology. During the deposition of Zr-ZrO{sub 2} cermet layer, a Zr metallic target was run in a gas mixture of argon and oxygen. By control of oxygen flow rate the different metal volume fractions in the cermet layers were achieved using dc reactive sputtering. A solar absorptance of 0.96 and normal emittance of 0.05 at 80 deg. C were achieved.

  8. Atomic Layer Deposition TiO2 Films and TiO2/SiNx Stacks Applied for Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Zu-Po Yang

    2016-08-01

    Full Text Available Titanium oxide (TiO2 films and TiO2/SiNx stacks have potential in surface passivation, anti-reflection coatings and carrier-selective contact layers for crystalline Si solar cells. A Si wafer, deposited with 8-nm-thick TiO2 film by atomic layer deposition, has a surface recombination velocity as low as 14.93 cm/s at the injection level of 1.0 × 1015 cm−3. However, the performance of silicon surface passivation of the deposited TiO2 film declines as its thickness increases, probably because of the stress effects, phase transformation, atomic hydrogen and thermal stability of amorphous TiO2 films. For the characterization of 66-nm-thick TiO2 film, the results of transmission electron microscopy show that the anatase TiO2 crystallinity forms close to the surface of the Si. Secondary ion mass spectrometry shows the atomic hydrogen at the interface of TiO2 and Si which serves for chemical passivation. The crystal size of anatase TiO2 and the homogeneity of TiO2 film can be deduced by the measurements of Raman spectroscopy and spectroscopic ellipsometry, respectively. For the passivating contacts of solar cells, in addition, a stack composed of 8-nm-thick TiO2 film and a plasma-enhanced chemical-vapor-deposited 72-nm-thick SiNx layer has been investigated. From the results of the measurement of the reflectivity and effective carrier lifetime, TiO2/SiNx stacks on Si wafers perform with low reflectivity and some degree of surface passivation for the Si wafer.

  9. Electrochemical preparation of MoO{sub 3} buffer layer deposited onto the anode in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gacitua, M.; Soto, G.; Valle, M.A. del [Pontificia Universidad Catolica de Chile, Facultad de Quimica, Laboratorio de Electroquimica de Polimeros (LEP), Santiago (Chile); Boutaleb, Y.; Rehamnia, R. [Laboratoire d' Electrochimie, Universite Badji Mokhtar, Annaba (Algeria); Cattin, L.; Louarn, G. [Universite de Nantes, Nantes Atlantique Universites, Institut des Materiaux Jean Rouxel (IMN)-CNRS, Faculte des Sciences et Techniques, Nantes (France); Abe, S.Y. [Laboratoire de Physique de la Matiere Condensee et de Technologie (LPMCT), Universite de Cocody (Ivory Coast); Lare, Y. [Laboratoire d' Energie Solaire, Universite de Lome, Lome (Togo); Morsli, M; Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, Nantes (France); Drici, A. [LEREC Departement de physique, Universite Badji Mokhtar, Annaba (Algeria)

    2010-08-15

    In this work the authors have studied the advantages of using electrochemically deposited molybdenum oxide as a buffer layer in an organic bilayer heterojunction solar cell arrangement. Furthermore, it has been probed that electrochemistry provides an alternative low cost, reproducible and less laborious method to prepare thin layered deposits. The precursor solution is composed by a concentrated molybdic acid solution in a sulphuric media in order to ensure the obtainment of low reduced molybdenum species. Therefore, by means of potentiostatic techniques, ITO/molybdenum oxide transparent anodes were tested for the photovoltaic device showing improved surface properties. XDR and AFM techniques were used to characterize the morphology of the deposits. The films with optimum thickness (5 nm) are amorphous. XPS analysis indicates that the best results in solar cell performance are in hand with a heterogeneous composition of the molybdenum oxide film presenting Mo{sup V} and Mo{sup VI} as predominant species. The MoO{sub 3} films deposited by cyclic voltammetry are not as homogeneous as those deposited by potentiostatic technique and only Mo{sup VI} species are present. These differences may justify the different behaviour of the solar cells using these different buffer layers. Only buffer layers deposited by potentiostatic technique allow improving the cells performances in the same way than those achieved by evaporation. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Solar Photocatalytic Removal of Chemical and Bacterial Pollutants from Water Using Pt/TiO2-Coated Ceramic Tiles

    Directory of Open Access Journals (Sweden)

    S. P. Devipriya

    2012-01-01

    Full Text Available Semiconductor photocatalysis has become an increasingly promising technology in environmental wastewater treatment. The present work reports a simple technique for the preparation of platinum-deposited TiO2 catalysts and its immobilization on ordinary ceramic tiles. The Pt/TiO2 is characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive X-ray spectroscopy (EDAX, and diffuse reflectance spectroscopy (DRS. Deposition of Pt on TiO2 extends the optical absorption of the latter to the visible region which makes it attractive for solar energy application. Optimum loading of Pt on TiO2 was found to be 0.5%. The Pt/TiO2 is coated on ceramic tiles and immobilized. This catalyst was found effective for the solar photocatalytic removal of chemical and bacterial pollutants from water. Once the parameters are optimized, the Pt/TiO2/tile can find application in swimming pools, hospitals, water theme parks, and even industries for the decontamination of water.

  11. Dye sensitized solar cell applications of CdTiO3–TiO2 composite thin films deposited from single molecular complex

    International Nuclear Information System (INIS)

    A heterobimetallic complex [Cd2Ti4(μ-O)6(TFA)8(THF)6]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO3–TiO2 composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO3–TiO2 composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO3–TiO2 composite oxides photoanode film has been fabricated from single source precursor [Cd2Ti4(μ-O)6(TFA)8(THF)6]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO3–TiO2 thin film photoelectrode. • Application as dye sensitized photoanode for solar application

  12. Dye sensitized solar cell applications of CdTiO{sub 3}–TiO{sub 2} composite thin films deposited from single molecular complex

    Energy Technology Data Exchange (ETDEWEB)

    Ehsan, Muhammad Ali [Nanotechnology and Catalysis Centre (NANOCAT), University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Khaledi, Hamid [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Pandikumar, Alagarsamy; Huang, Nay Ming [Department of Physics, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Arifin, Zainudin [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Mazhar, Muhammad, E-mail: mazhar42pk@yahoo.com [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia)

    2015-10-15

    A heterobimetallic complex [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO{sub 3}–TiO{sub 2} composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO{sub 3}–TiO{sub 2} composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO{sub 3}–TiO{sub 2} composite oxides photoanode film has been fabricated from single source precursor [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO{sub 3}–TiO{sub 2} thin film photoelectrode. • Application as dye sensitized photoanode for solar application.

  13. Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Lan; ZHAO De-Gang; YANG Hui; LIANG Jun-Wu

    2007-01-01

    A high-Al-content AlCaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire bylow pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity,and twisted mosaicity on the conditions of the AlCaN epilayer deposition is evaluated. An AlCaN epilayer withfavourable surface morphology and crystal quality is deposited on a 20nm low-temperature-deposited AlN buffer at a low Ⅴ/Ⅲ flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.

  14. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    KAUST Repository

    Ip, Alexander H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

  15. MBMS studies of gas-phase kinetics in diamond chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fox, C.A. [Stanford Univ., CA (United States); McMaster, M.C. [IBM San Jose, CA (United States); Tung, D.M. [Sandia National Labs., Livermore, CA (United States)] [and others

    1995-03-01

    A molecular beam mass spectrometer system (MBMS) has been used to determine the near-surface gaseous composition involved in the low pressure chemical vapor deposition of diamond. With this system, radical and stable species can be detected with a sensitivity better than 10 ppm. Threshold ionization techniques have been employed to distinguish between radical species in the deposition environment from radical species generated by parent molecule cracking. An extensive calibration procedure was used to enable the quantitative determination of H-atom and CH{sub 3} radical mole fractions. Using the MBMS system, the gaseous composition involved in LPCVD of diamond has been measured for a wide variety of deposition conditions, including hot-filament gas activation, microwave-plasma gas activation, and a variety of precursor feed mixtures (ex: CH{sub 4}/H{sub 2}, C{sub 2}H{sub 2}/H{sub 2}). For microwave-plasma activation (MPCVD), the radical concentrations (H-atom and CH{sub 3} radicals) are independent of the identity of the precursor feed gas provided the input carbon mole fraction is constant. However, in hot-filament diamond deposition (HFCVD), the atomic hydrogen concentration decreased by an order of magnitude as the mole fraction of carbon in the precursor mixture is increased to .07; this sharp reduction has been attributed to filament poisoning of the catalytic tungsten surface via hydrocarbon deposition. Additionally, the authors find that the H-atom concentration is independent of the substrate temperature for both hot-filament and microwave plasma deposition; radial H-atom diffusion is invoked to explain this observation.

  16. Low-temperature chemical bath deposition of crystalline ZnO

    Science.gov (United States)

    Jacobs, Klaus; Balitsky, Denis; Armand, Pascale; Papet, Philippe

    2010-03-01

    ZnO crystals can be grown from alkaline aqueous solution not only by the standard hydrothermal technique at temperatures between 350 °C and 400 °C, but also by chemical bath deposition (CBD) at temperatures below 100 °C. In the presence of ZnO and ScAlMgO 4 (SCAM) substrates almost all ZnO deposits on the substrate, with different habits, however. Under optimized conditions even homoepitaxial layers can be obtained, while rod-like structures are obtained on SCAM substrates. The chemistry and the driving forces behind the two processes are considered in detail and the temperature dependence of the solution composition has been calculated. The driving force for the ZnO crystal growth in the standard hydrothermal technique is the difference in the ZnO solubility in alkaline solutions at different temperatures. In contrast, the driving force for the chemical bath deposition of ZnO at low temperatures is the decay of zinc ion complex molecules with increasing temperature.

  17. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Elen, Ken [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Strategisch Initiatief Materialen (SIM), SoPPoM Program (Belgium); Capon, Boris [Strategisch Initiatief Materialen (SIM), SoPPoM Programm (Belgium); Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); De Dobbelaere, Christopher [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Dewulf, Daan [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Peys, Nick [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Kapeldreef 75, B-3001 Heverlee (Belgium); Detavernier, Christophe [Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); Hardy, An [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium)

    2014-03-31

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum.

  18. YBCO coated conductors prepared by chemical solution deposition: A TEM study

    International Nuclear Information System (INIS)

    Recently large attention has been devoted to chemical solution deposition (CSD) as a promising method for fabricating low-cost YBCO coated conductors. We present an extensive transmission electron microscopy (TEM) cross-section analysis of CSD grown La2Zr2O7 (LZO) buffer layers on flexible Ni-5at%W substrates. The high performance of these chemical solution derived buffer layers was confirmed by a YBCO critical current density Jc of 0.84 MA/cm2 achieved for a coated conductor sample with a layer sequence Ni-5at%W/LZO (CSD)/CeO2 (CSD)/YBCO, where the YBCO film was deposited by pulsed laser deposition (PLD). TEM sample preparation was carried out by conventional mechanical polishing and ion milling techniques. TEM bright-field images of the LZO films and nickel substrates were acquired under two-beam conditions. The layer thicknesses and nanovoid size were determined for the LZO buffer layers. Moreover, the interfaces between the different layers were investigated and identified. Electron diffraction patterns were obtained in order to determine the microscopic texture of the samples. Despite the presence of nanovoids in the LZO buffer layers, they act as efficient Ni diffusion barriers

  19. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    International Nuclear Information System (INIS)

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum

  20. Functional metal oxide coatings by molecule-based thermal and plasma chemical vapor deposition techniques.

    Science.gov (United States)

    Mathur, S; Ruegamer, T; Donia, N; Shen, H

    2008-05-01

    Deposition of thin films through vaccum processes plays an important role in industrial processing of decorative and functional coatings. Many metal oxides have been prepared as thin films using different techniques, however obtaining compositionally uniform phases with a control over grain size and distribution remains an enduring challenge. The difficulties are largely related to complex compositions of functional oxide materials, which makes a control over kinetics of nucleation and growth processes rather difficult to control thus resulting in non-uniform material and inhomogeneous grain size distribution. Application of tailor-made molecular precursors in low pressure or plasma-enhanced chemical vapor deposition (CVD) techniques offers a viable solution for overcoming thermodynamic impediments involved in thin film growth. In this paper molecule-based CVD of functional coatings is demonstrated for iron oxide (Fe2O3, Fe3O4), vanadium oxide (V2O5, VO2) and hafnium oxide (HfO2) phases followed by the characterization of their microstructural, compositional and functional properties which support the advantages of chemical design in simplifying deposition processes and optimizing functional behavior. PMID:18572690

  1. Fabrication of ZnO nanorod using spray-pyrolysis and chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Ramadhani, Muhammad F., E-mail: brian@tf.itb.ac.id; Pasaribu, Maruli A. H., E-mail: brian@tf.itb.ac.id; Yuliarto, Brian, E-mail: brian@tf.itb.ac.id; Nugraha, E-mail: brian@tf.itb.ac.id [Advanced Functional Materials Laboratory, Engineering Physics Department Faculty of Industrial Technology, Institut Teknologi Bandung (Indonesia)

    2014-02-24

    ZnO thin films with nanorod structure were deposited using Ultrasonic Spray Pyrolysis method for seed growth, and Chemical Bath Deposition (CBD) for nanorod growth. High purity Zn-hydrate and Urea are used to control Ph were dissolved in ethanol and aqua bidest in Ultrasonic Spray Pyrolysis process. Glass substrate was placed above the heater plate of reaction chamber, and subsequently sprayed with the range duration of 5, 10 and 20 minutes at the temperatures of 3500 C. As for the Chemical Bath Deposition, the glass substrate with ZnO seed on the surface was immerse to Zn-hydrate, HMTA (Hexa Methylene Tetra Amine) and deionized water solution for duration of 3, 5 and 7 hour and temperatures of 600 C, washed in distilled water, dried, and annealed at 3500 C for an hour. The characterization of samples was carried out to reveal the surface morphology using Scanning Electron Microscopy (SEM). From the data, the combination of 5 minutes of Ultrasonic Spray Pyrolysis process and 3 hour of CBD has showed the best structure of nanorod. Meanwhile the longer Spraying process and CBD yield the bigger nanorod structure that have been made, and it makes the films more dense which make the nanorod collide each other and as a result produce unsymetric nanorod structure.

  2. Nanocomposite Coatings Codeposited with Nanoparticles Using Aerosol-Assisted Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Xianghui Hou

    2013-01-01

    Full Text Available Incorporating nanoscale materials into suitable matrices is an effective route to produce nanocomposites with unique properties for practical applications. Due to the flexibility in precursor atomization and delivery, aerosol-assisted chemical vapour deposition (AACVD process is a promising way to synthesize desired nanocomposite coatings incorporating with preformed nanoscale materials. The presence of nanoscale materials in AACVD process would significantly influence deposition mechanism and thus affect microstructure and properties of the nanocomposites. In the present work, inorganic fullerene-like tungsten disulfide (IF-WS2 has been codeposited with Cr2O3 coatings using AACVD. In order to understand the codeposition process for the nanocomposite coatings, chemical reactions of the precursor and the deposition mechanism have been studied. The correlation between microstructure of the nanocomposite coatings and the codeposition mechanism in the AACVD process has been investigated. The heterogeneous reaction on the surface of IF-WS2 nanoparticles, before reaching the substrate surface, is the key feature of the codeposition in the AACVD process. The agglomeration of nanoparticles in the nanocomposite coatings is also discussed.

  3. Fabrication of ZnO nanorod using spray-pyrolysis and chemical bath deposition method

    International Nuclear Information System (INIS)

    ZnO thin films with nanorod structure were deposited using Ultrasonic Spray Pyrolysis method for seed growth, and Chemical Bath Deposition (CBD) for nanorod growth. High purity Zn-hydrate and Urea are used to control Ph were dissolved in ethanol and aqua bidest in Ultrasonic Spray Pyrolysis process. Glass substrate was placed above the heater plate of reaction chamber, and subsequently sprayed with the range duration of 5, 10 and 20 minutes at the temperatures of 3500 C. As for the Chemical Bath Deposition, the glass substrate with ZnO seed on the surface was immerse to Zn-hydrate, HMTA (Hexa Methylene Tetra Amine) and deionized water solution for duration of 3, 5 and 7 hour and temperatures of 600 C, washed in distilled water, dried, and annealed at 3500 C for an hour. The characterization of samples was carried out to reveal the surface morphology using Scanning Electron Microscopy (SEM). From the data, the combination of 5 minutes of Ultrasonic Spray Pyrolysis process and 3 hour of CBD has showed the best structure of nanorod. Meanwhile the longer Spraying process and CBD yield the bigger nanorod structure that have been made, and it makes the films more dense which make the nanorod collide each other and as a result produce unsymetric nanorod structure

  4. Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Chia-Hsun Hsu

    2013-01-01

    Full Text Available Amorphous-like silicon (a-Si:H-like thin films are prepared by 27.12 MHz plasma-enhanced chemical vapor deposition technique. The films are applied to p-i-n single junction thin film solar cells with varying i-layer thickness to observe the effects on the short-circuit current density, as well as the open-circuit voltage, fill factor, and conversion efficiency. The most significant experimental result is that Jsc has two different behaviors with increasing the i-layer thickness, which can be related to carrier collection efficiency in the long wavelength region. Furthermore, technology computer-aided design simulation software is used to gain better insight into carrier generation and recombination of the solar cells, showing that for the i-layer thickness of 200 to 300 nm the generation dominates the carrier density and thus Jsc, whereas for the i-layer thickness of 300 to 400 nm the recombination becomes the leading factor. The simulation results of cell performances are in good agreement with experimental data, indicating that our simulation has great reliability. In addition, the a-Si:H-like solar cells have low light-induced degradation, which in turn can have a great potential to be used for stable and high-efficiency solar cells.

  5. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro, E-mail: takeuchi@umd.edu [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States); Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  6. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    International Nuclear Information System (INIS)

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure

  7. Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure

    International Nuclear Information System (INIS)

    Metal-organic chemical vapour deposition (MOCVD) of various phases in PrOx system has been studied in relation with deposition temperature (450-750 deg. C) and oxygen partial pressure (0.027-100 Pa or 0.2-750 mTorr). Depositions were carried out by pulsed liquid injection MOCVD using Pr(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) precursor dissolved in toluene or monoglyme. By varying deposition temperature and oxygen partial pressure amorphous films or various crystalline PrOx phases (Pr2O3, Pr7O12, Pr6O11) and their mixtures can be grown. The pure crystalline Pr2O3 phase grows only in a narrow range of partial oxygen pressure and temperature, while high oxygen pressure (40-100 Pa) always leads to the most stable Pr6O11 phase. The influence of annealing under vacuum at 750 deg. C on film phase composition was also studied. Near 90% step coverage conformity was achieved for PrOx films on structured silicon substrates with aspect ratio 1:10. In air degradation of Pr2O3 films with transformation to Pr(OH)3 was observed in contrast to Pr6O11 films

  8. Morphology of CdSe films prepared by chemical bath deposition: The role of substrate

    Energy Technology Data Exchange (ETDEWEB)

    Simurda, M. [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Nemec, P. [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic)]. E-mail: nemec@karlov.mff.cuni.cz; Formanek, P. [Institut fuer Strukturphysik, Technische Universitaet Dresden, Zellescher Weg 16, D-01062 Dresden (Germany); Nemec, I. [Charles University in Prague, Faculty of Science, Albertov 6, 128 43 Prague 2 (Czech Republic); Nemcova, Y. [Charles University in Prague, Faculty of Science, Albertov 6, 128 43 Prague 2 (Czech Republic); Maly, P. [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic)

    2006-07-26

    We combine optical spectroscopy and transmission electron microscopy to study the growth and the structural morphology of CdSe films prepared by chemical bath deposition (CBD) on two considerably different substrates. The films grown on glass are compact and strongly adherent to the substrate. On the contrary, the films deposited on carbon-coated glass (with approx. 20 nm thick amorphous carbon layer) are only loosely adherent to the substrate. Using transmission electron microscopy we revealed that even though the films grown on both substrates are assembled from closely spaced nanocrystals with diameter of about 5 nm, the films morphology on the sub-micrometer scale is considerably different in the two cases. While the films deposited on glass are rather compact, the films prepared on carbon layer have high porosity and are formed by interconnected spheres which size is dependent on the duration of deposition (e.g. 155 nm for 6 h and 350 nm for 24 h). This shows that the choice of the substrate for CBD has a stronger influence on the sub-micrometer film morphology than on the properties of individual nanocrystals forming the film.

  9. Morphology of CdSe films prepared by chemical bath deposition: The role of substrate

    International Nuclear Information System (INIS)

    We combine optical spectroscopy and transmission electron microscopy to study the growth and the structural morphology of CdSe films prepared by chemical bath deposition (CBD) on two considerably different substrates. The films grown on glass are compact and strongly adherent to the substrate. On the contrary, the films deposited on carbon-coated glass (with approx. 20 nm thick amorphous carbon layer) are only loosely adherent to the substrate. Using transmission electron microscopy we revealed that even though the films grown on both substrates are assembled from closely spaced nanocrystals with diameter of about 5 nm, the films morphology on the sub-micrometer scale is considerably different in the two cases. While the films deposited on glass are rather compact, the films prepared on carbon layer have high porosity and are formed by interconnected spheres which size is dependent on the duration of deposition (e.g. 155 nm for 6 h and 350 nm for 24 h). This shows that the choice of the substrate for CBD has a stronger influence on the sub-micrometer film morphology than on the properties of individual nanocrystals forming the film

  10. Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wimmer, M., E-mail: mark.wimmer@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Gerlach, D.; Wilks, R.G.; Scherf, S.; Félix, R. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Lupulescu, C. [Institute for Optics and Atomic Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Ruske, F.; Schondelmaier, G.; Lips, K. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Hüpkes, J. [Institute for Energy Research, Forschungszentrum Jülich GmbH, Leo-Brandt-Straße, 52425 Jülich (Germany); Gorgoi, M. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Eberhardt, W. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institute for Optics and Atomic Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Rech, B. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Bär, M., E-mail: marcus.baer@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus, Konrad-Wachsmann-Allee 1, 03046 Cottbus (Germany)

    2013-10-15

    Highlights: •We used HAXPES to identify chemical interactions at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. •The results indicate a diffusion of zinc and aluminum into the silicon upon annealing procedures which are part of the solar cell processing. •The contamination of the silicon may be detrimental for the solar cell performance. -- Abstract: Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface – more pronounced for aluminum than for zinc – as explanation. Based on these insights the complex chemical interface structure is discussed.

  11. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  12. To the partnership in Kanegafuchi Chemical Industry and solar cell; Kaneka, taiyo denchi de teikei he

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-07-01

    Kanegafuchi Chemical Ind. clarified that the consultation was advanced in the direction in which the business cooperates with BP Amoco Corp. in international oil majors on the solar cell business on 11 th capital. In full amount fund subsidiary of the bell pool chemistry, the solar cell making and selling company is established in the joint venture in Europe and America, Asia, when the BP Amoco Corp. does capital participation in money mosquito solar tech which is the production marketer of solar cell. The plan which develops the amorphous solar cell of low cost which the bell pool chemistry developed in the world. The consultation of the partnership is also arranging prospect in the end June, and it seems to greatly jump by uniting with the BP Amoco Corp. of the largest hand. (translated by NEDO)

  13. Photocatalytic Functional Coating of TiO2 Thin Film Deposited by Cyclic Plasma Chemical Vapor Deposition at Atmospheric Pressure

    Science.gov (United States)

    Kwon, Jung-Dae; Rha, Jong-Joo; Nam, Kee-Seok; Park, Jin-Seong

    2011-08-01

    Photocatalytic TiO2 thin films were prepared with titanium tetraisopropoxide (TTIP) using cyclic plasma chemical vapor deposition (CPCVD) at atmospheric pressure. The CPCVD TiO2 films contain carbon-free impurities up to 100 °C and polycrystalline anatase phases up to 200 °C, due to the radicals and ion-bombardments. The CPCVD TiO2 films have high transparency in the visible wavelength region and absorb wavelengths below 400 nm (>3.2 eV). The photocatalytic effects of the CPCVD TiO2 and commercial sprayed TiO2 films were measured by decomposing methylene blue (MB) solution under UV irradiation. The smooth CPCVD TiO2 films showed a relatively lower photocatalytic efficiency, but superior catalyst-recycling efficiency, due to their high adhesion strength on the substrates. This CPCVD technique may provide the means to produce photocatalytic thin films with low cost and high efficiency, which would be a reasonable candidate for practical photocatalytic applications, because of the reliability and stability of their photocatalytic efficiency in a practical environment.

  14. Comparison of Chemical and Microbiological Parameters of Charcoal Versus Gas and Solar Energy Treated Milk

    Directory of Open Access Journals (Sweden)

    Mohamed Osman Mohamed Abdalla

    2010-09-01

    Full Text Available The effect of heat treatment using different sources of heat on the chemical composition and microbial quality of milk was studied. Raw cow, goat and sheep milk were heated with charcoal, gas and solar energy at 99ºC for 12 min, cooled to 20ºC and chemical (fat, protein, total solids, ash (titratable acidity, vitamin C composition as well as microbiological examination (total viable bacteria count were carried out. Results showed that fat, total solids and ash contents w ere high in cow milk heated with solar energy, while protein content was high when milk was heated with gas, and the titratable acidity was high in milk heated with charcoal and gas. The fat, total solids and ash contents of goat milk w ere high when milk was heated with gas, while the protein content and titratable acidity were high when milk was heated with solar energy. The fat contents of sheep milk was high when milk was heated with gas, while the protein and total solids content were high in milk heated with solar energy, and ash content and titratable acidity were high in milk heated with charcoal. Vitamin C content was high for all milks when heated with solar energy, while the total viable bacteria count was high in milks of all species when heated with charcoal. Solar energy was shown to be suitable for heating milk from chemical view point, while heat treatment of milk with gas was found to be better microbiologically.

  15. Ion-beam analysis of CuInSe2 solar cells deposited on polyimide foil.

    Science.gov (United States)

    Spemann, D; Lorenz, M; Butz, T; Otte, K

    2004-06-01

    CuInSe(2) (CIS) solar cells deposited on polyimide foil by the Solarion company in a web-coater-based process using sputter and evaporation techniques were investigated in the ion beam laboratory LIPSION of the University of Leipzig by means of Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) using high-energy broad ion beams and microbeams. From these measurements the composition of the absorber and the lateral homogeneity and film thicknesses of the individual layers could be determined on the basis of some reasonable assumptions. For the first time, quantitative depth profiling of the individual elements was performed by microPIXE measurements on a beveled section prepared by ion-beam etching of a CIS solar cell. Within the CIS absorber layer no significant concentration-depth gradients were found for Cu, In, and Se, in contrast with results from secondary neutral mass spectrometry (SNMS) depth profiling, which was applied to the same samples for comparison. Furthermore, both PIXE and SNMS showed the presence of a remarkable amount of Cd from the CdS buffer layer in the underlying absorber. PMID:15179537

  16. Chemical Bath Deposition of Aluminum Oxide Buffer on Curved Surfaces for Growing Aligned Carbon Nanotube Arrays.

    Science.gov (United States)

    Wang, Haitao; Na, Chongzheng

    2015-07-01

    Direct growth of vertically aligned carbon nanotube (CNT) arrays on substrates requires the deposition of an aluminum oxide buffer (AOB) layer to prevent the diffusion and coalescence of catalyst nanoparticles. Although AOB layers can be readily created on flat substrates using a variety of physical and chemical methods, the preparation of AOB layers on substrates with highly curved surfaces remains challenging. Here, we report a new solution-based method for preparing uniform layers of AOB on highly curved surfaces by the chemical bath deposition of basic aluminum sulfate and annealing. We show that the thickness of AOB layer can be increased by extending the immersion time of a substrate in the chemical bath, following the classical Johnson-Mehl-Avrami-Kolmogorov crystallization kinetics. The increase of AOB thickness in turn leads to the increase of CNT length and the reduction of CNT curviness. Using this method, we have successfully synthesized dense aligned CNT arrays of micrometers in length on substrates with highly curved surfaces including glass fibers, stainless steel mesh, and porous ceramic foam. PMID:26053766

  17. Computational Study of Fluid Flow in a Rotational Chemical Vapor Deposition (CVD) Reactor

    Science.gov (United States)

    Wong, Sun; Jaluria, Yogesh

    2015-11-01

    In a typical Chemical Vapor Deposition (CVD) reactor, the flow of the reacting gases is one of the most important considerations that must be precisely controlled in order to obtain desired film quality. In general, the fluids enter the reactor chamber, travel over to the heated substrate area, where chemical reactions lead to deposition, and then exit the chamber. However, the flow inside the reactor chamber is not that simple. It would often develop recirculation at various locations inside the reactor due to reactor geometry, flow conditions, buoyancy effects from temperature differences and rotational effects cause by the rotating substrate. This recirculation causes hot spots and affects the overall performance of the reactor. A recirculation fluid packet experiences a longer residence time inside the reactor and, thus, it heats up to higher temperatures causing unwanted chemical reactions and decomposition. It decreases the grow rate and uniformity on the substrate. A mathematical and computational model has been developed to help identify these unwanted hot spots occurring inside the CVD reactor. The model can help identify the user parameters needed to reduce the recirculation effects and better control the flow. Flow rates, pressures, rotational speeds and temperatures can all affect the severity of the recirculation within the reactor. The model can also help assist future designs as the geometry plays a big role in controlling fluid flow. The model and the results obtained are discussed in detail.

  18. Preparation of diamond/Cu microchannel heat sink by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    刘学璋; 罗浩; 苏栩; 余志明

    2015-01-01

    A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition (HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray detector (EDX). Results show that the nucleation density is found to be up to 1010 cm−2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.

  19. The Physico-Chemical Conditions for Mobilization of Gold in Mobin Gold Deposit, Southwest Hunan, China

    Institute of Scientific and Technical Information of China (English)

    谷俐; 杨华; 戴塔根; 刘利萍

    2002-01-01

    Experiments on water-rock interaction were carried out on wall-rock samples from the Mobin gold deposit, Southwest Hunan, China, with the aim of determining the optimum physical and chemical conditions for the mobilization of gold in solution. Results indicate that gold is most easily mobilized from the wall rock-tuffaceous slate of the Mobin Deposit. Mobi lization is optimized if fluids are neutral to slightly alkaline and contain both chlorine and sulphur ions at the concentration and composition of about [0.25M (NH4)2S + 1M NaCl]. The amount of gold leached from the tuffaceous slate increases with temperature although the effect decreases above about 200℃ .

  20. MgB{sub 2} thin films by hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xi, X.X. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]. E-mail: xxx4@psu.edu; Pogrebnyakov, A.V. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Zhuang, C.G. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Physics, Peking University, Beijing 100871 (China); Li, Qi [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D.R. [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Y.B.; Tian, W.; Pan, X.Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Cybart, S.A. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Dynes, R.C. [Department of Physics, University of California, Berkeley, CA 94720 (United States)

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB{sub 2} thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB{sub 2} films. The epitaxial pure MgB{sub 2} films grown by HPCVD show higher-than-bulk T {sub c} due to tensile strain in the films. The HPCVD films are the cleanest MgB{sub 2} materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB{sub 2}. The carbon-alloyed HPCVD films demonstrate record-high H {sub c2} values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB{sub 2} Josephson junctions.