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Sample records for chemical solution deposition

  1. Effects of deposition time in chemically deposited ZnS films in acidic solution

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

    2015-08-31

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

  2. Advanced titania buffer layer architectures prepared by chemical solution deposition

    Science.gov (United States)

    Kunert, J.; Bäcker, M.; Brunkahl, O.; Wesolowski, D.; Edney, C.; Clem, P.; Thomas, N.; Liersch, A.

    2011-08-01

    Chemical solution deposition (CSD) was used to grow high-quality (100) oriented films of SrTiO3 (STO) on CSD CaTiO3 (CTO), Ba0.1Ca0.9TiO3 (BCT) and STO seed and template layers. These template films bridge the lattice misfit between STO and the nickel-tungsten (NiW) substrate, assisting in dense growth of textured STO. Additional niobium (Nb) doping of the STO buffer layer reduces oxygen diffusion which is necessary to avoid undesired oxidation of the NiW. The investigated templates offer suitable alternatives to established standard buffer systems like La2Zr2O7 (LZO) and CeO2 for coated conductors.

  3. Electrical and magnetoresistivity studies in chemical solution deposited La

    Energy Technology Data Exchange (ETDEWEB)

    Angappane, S.; Murugaraj, P.; Sethupathi, K.; Rangarajan, G.; Sastry, V. S.; Chakkaravarthi, A. Arul; Ramasamy, P.

    2001-06-01

    High quality magnetoresistive La{sub (1{minus}x)}Ca{sub x}MnO{sub 3} thin films have been prepared by the chemical solution deposition technique. A solution of propionate precursors of lanthanum, calcium, and manganese in propionic acid was used for this purpose. Films of varying compositions (x varying from 0.1 to 0.4) were spin coated on to LaAlO{sub 3}(100) and SrTiO{sub 3}(100) substrates at room temperature and pyrolyzed in the temperature range 600{endash}850{degree}C. For fixed compositions, annealing at higher temperatures shifts the insulator{endash}metal transition temperature (T{sub I{endash}M}) to higher values accompanied by a reduction in the resistivity values. The T{sub I{endash}M} variation for different x values was found to be less pronounced in the compositions x=0.2, 0.3, and 0.4. Typical T{sub I{endash}M} values of 283 K and 290 K were obtained for La{sub 0.7}Ca{sub 0.3}MnO{sub 3} coated on LaAlO{sub 3} and SrTiO{sub 3} substrates, respectively, when annealed at 850{degree}C. The substrate effect was found to be more pronounced for the x value 0.1 which showed two peaks (one at 271 K and another at 122 K) in the {rho}-T curve. The roles of substrate mismatch, composition variation, and annealing temperatures are discussed. {copyright} 2001 American Institute of Physics.

  4. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Viswanathan S Saji; Han Cheol Choe

    2010-06-01

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was ∼ 2000 and tan ∼ 0.05.

  5. Chemical solution deposition of YBCO thin film by different polymer additives

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.T.; Li, G.; Pu, M.H.; Sun, R.P.; Zhou, H.M.; Zhang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Yang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)], E-mail: yzhao@swjtu.edu.cn

    2008-09-15

    A polymer-assisted chemical solution deposition approach has been proposed for the preparation of YBCO thin film. Different additives like PVB (polyvinyl butyral), PEG (polyethylene glycol) and PVP (polyvinylpyrrolidone) have been used to adjust the final viscosity of the precursor solution and thus the film formation. In this fluorine-free approach, YBCO has been deposited on single crystal substrates with metal acetates being starting materials. Biaxially textured YBCO thin films have been obtained. However, different additives lead to different microstructure. Dense, smooth and crack-free YBCO film prepared with PVB as additive yields sharp superconducting transition around T{sub c} = 90 K as well as high J{sub c} (0 T, 77 K) over 3 MA/cm{sup 2}.

  6. Chemical solution deposition of YBCO thin film by different polymer additives

    Science.gov (United States)

    Wang, W. T.; Li, G.; Pu, M. H.; Sun, R. P.; Zhou, H. M.; Zhang, Y.; Zhang, H.; Yang, Y.; Cheng, C. H.; Zhao, Y.

    2008-09-01

    A polymer-assisted chemical solution deposition approach has been proposed for the preparation of YBCO thin film. Different additives like PVB (polyvinyl butyral), PEG (polyethylene glycol) and PVP (polyvinylpyrrolidone) have been used to adjust the final viscosity of the precursor solution and thus the film formation. In this fluorine-free approach, YBCO has been deposited on single crystal substrates with metal acetates being starting materials. Biaxially textured YBCO thin films have been obtained. However, different additives lead to different microstructure. Dense, smooth and crack-free YBCO film prepared with PVB as additive yields sharp superconducting transition around Tc = 90 K as well as high Jc (0 T, 77 K) over 3 MA/cm 2.

  7. Influence of precursor solution parameters on chemical properties of calcium phosphate coatings prepared using Electrostatic Spray Deposition (ESD).

    NARCIS (Netherlands)

    Leeuwenburgh, S.C.G.; Wolke, J.G.C.; Schoonman, J.; Jansen, J.A.

    2004-01-01

    A novel coating technique, referred to as Electrostatic Spray Deposition (ESD), was used to deposit calcium phosphate (CaP) coatings with a variety of chemical properties. The relationship between the composition of the precursor solutions and the crystal and molecular structure of the deposited coa

  8. Chemical surface deposition of cds thin films from CdI2 aqueous solution

    Directory of Open Access Journals (Sweden)

    G. Il’chuk

    2009-01-01

    Full Text Available For the first time using CdI2 solution CdS films on glass and ITO coated glass substrates were produced by the method of layerwise chemical surface deposition (ChSD. CdS thin films with the widths from 40 nm to 100 nm were obtained for windows in solar cells based on CdS/CdTe heterojunctions. Changes of the structural and optical properties of CdS films due to air annealing are shown.

  9. Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

    Science.gov (United States)

    Starschich, S.; Griesche, D.; Schneller, T.; Waser, R.; Böttger, U.

    2014-05-01

    Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm2. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO2.

  10. Wet Etching of Heat Treated Atomic Layer Chemical Vapor Deposited Zirconium Oxide in HF Based Solutions

    Science.gov (United States)

    Balasubramanian, Sriram; Raghavan, Srini

    2008-06-01

    Alternative materials are being considered to replace silicon dioxide as gate dielectric material. Of these, the oxides of hafnium and zirconium show the most promise. However, integrating these new high-k materials into the existing complementary metal-oxide-semiconductor (CMOS) process remains a challenge. One particular area of concern is the wet etching of heat treated high-k dielectrics. In this paper, work done on the wet etching of heat treated atomic layer chemical vapor deposited (ALCVD) zirconium oxide in HF based solutions is presented. It was found that heat treated material, while refractory to wet etching at room temperature, is more amenable to etching at higher temperatures when methane sulfonic acid is added to dilute HF solutions. Selectivity over SiO2 is still a concern.

  11. Lead-Free Piezoelectric Diaphragm Biosensors Based on Micro-Machining Technology and Chemical Solution Deposition.

    Science.gov (United States)

    Li, Xiaomeng; Wu, Xiaoqing; Shi, Peng; Ye, Zuo-Guang

    2016-01-12

    In this paper, we present a new approach to the fabrication of integrated silicon-based piezoelectric diaphragm-type biosensors by using sodium potassium niobate-silver niobate (0.82KNN-0.18AN) composite lead-free thin film as the piezoelectric layer. The piezoelectric diaphragms were designed and fabricated by micro-machining technology and chemical solution deposition. The fabricated device was very sensitive to the mass changes caused by various targets attached on the surface of diaphragm. The measured mass sensitivity value was about 931 Hz/μg. Its good performance shows that the piezoelectric diaphragm biosensor can be used as a cost-effective platform for nucleic acid testing.

  12. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

    2005-12-22

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

  13. Lead-Free Piezoelectric Diaphragm Biosensors Based on Micro-Machining Technology and Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Xiaomeng Li

    2016-01-01

    Full Text Available In this paper, we present a new approach to the fabrication of integrated silicon-based piezoelectric diaphragm-type biosensors by using sodium potassium niobate-silver niobate (0.82KNN-0.18AN composite lead-free thin film as the piezoelectric layer. The piezoelectric diaphragms were designed and fabricated by micro-machining technology and chemical solution deposition. The fabricated device was very sensitive to the mass changes caused by various targets attached on the surface of diaphragm. The measured mass sensitivity value was about 931 Hz/μg. Its good performance shows that the piezoelectric diaphragm biosensor can be used as a cost-effective platform for nucleic acid testing.

  14. Chemically deposited tin sulphide

    Energy Technology Data Exchange (ETDEWEB)

    Akkari, A., E-mail: anis.akkari@ies.univ-montp2.f [Laboratoire de Physique de la Matiere Condensee, Faculte des Sciences de Tunis El Manar, Tunisie 2092 (Tunisia); Institut d' Electronique du Sud, Unite Mixte de Recherche 5214 UM2-CNRS (ST2i), Universite Montpellier 2, Place Eugene Bataillon, CC 082, 34095 Montpellier Cedex 5 (France); Guasch, C. [Institut d' Electronique du Sud, Unite Mixte de Recherche 5214 UM2-CNRS (ST2i), Universite Montpellier 2, Place Eugene Bataillon, CC 082, 34095 Montpellier Cedex 5 (France); Kamoun-Turki, N. [Laboratoire de Physique de la Matiere Condensee, Faculte des Sciences de Tunis El Manar, Tunisie 2092 (Tunisia)

    2010-02-04

    SnS thin films were deposited on glass substrates after multi-deposition runs by chemical bath deposition from aqueous solution containing 30 ml triethanolamine (TEA) (C{sub 6}H{sub 15}NO{sub 3}) (50%), 10 ml thioacetamide (CH{sub 3}CSNH{sub 2}), 8 ml ammonia (NH{sub 3}) solution and 10 ml of Sn{sup 2+}(0.1 M). These films were characterised with X-ray diffraction (XRD), with scanning electron microscopy, and with spectrophotometric measurements. The obtained thin films exhibit the zinc blend structure, the crystallinity seems to be improved as the film thickness increases and the band gap energy is found to be about 1.76 eV for film prepared after six depositions runs.

  15. Superhydrophobicity of polyvinylidene fluoride membrane fabricated by chemical vapor deposition from solution

    Energy Technology Data Exchange (ETDEWEB)

    Zheng Zhenrong [College of Textiles, Tianjin Polytechnic University, Tianjin 300160 (China); Gu Zhenya, E-mail: zhenyagu@hotmail.com [College of Textiles, Tianjin Polytechnic University, Tianjin 300160 (China); Huo Ruiting; Ye Yonghong [College of Textiles, Tianjin Polytechnic University, Tianjin 300160 (China)

    2009-05-30

    Due to the chemical stability and flexibility, polyvinylidene fluoride (PVDF) membranes are widely used as the topcoat of architectural membrane structures, roof materials of vehicle, tent fabrics, and so on. Further modified PVDF membrane with superhydrophobic property may be even superior as the coating layer surface. The lotus flower is always considered to be a sacred plant, which can protect itself against water, dirt, and dust. The superhydrophobic surface of lotus leaf is rough, showing the micro- and nanometer scale morphology. In this work, the microreliefs of lotus leaf were mimicked using PVDF membrane and the nanometer scale peaks on the top of the microreliefs were obtained by the method of chemical vapor deposition from solution. The surface morphology of PVDF membrane was investigated by scanning electronic microscopy (SEM) and atomic force microscope (AFM). Elemental composition analysis by X-ray photoelectron spectroscopy (XPS) revealed that the material of the nanostructure of PVDF membrane was polymethylsiloxane. On the lotus-leaf-like PVDF membrane, the water contact angle and sliding angle were 155 deg. and 4 deg., respectively, exhibiting superhydrophobic property.

  16. Superhydrophobicity of polyvinylidene fluoride membrane fabricated by chemical vapor deposition from solution

    Science.gov (United States)

    Zheng, Zhenrong; Gu, Zhenya; Huo, Ruiting; Ye, Yonghong

    2009-05-01

    Due to the chemical stability and flexibility, polyvinylidene fluoride (PVDF) membranes are widely used as the topcoat of architectural membrane structures, roof materials of vehicle, tent fabrics, and so on. Further modified PVDF membrane with superhydrophobic property may be even superior as the coating layer surface. The lotus flower is always considered to be a sacred plant, which can protect itself against water, dirt, and dust. The superhydrophobic surface of lotus leaf is rough, showing the micro- and nanometer scale morphology. In this work, the microreliefs of lotus leaf were mimicked using PVDF membrane and the nanometer scale peaks on the top of the microreliefs were obtained by the method of chemical vapor deposition from solution. The surface morphology of PVDF membrane was investigated by scanning electronic microscopy (SEM) and atomic force microscope (AFM). Elemental composition analysis by X-ray photoelectron spectroscopy (XPS) revealed that the material of the nanostructure of PVDF membrane was polymethylsiloxane. On the lotus-leaf-like PVDF membrane, the water contact angle and sliding angle were 155° and 4°, respectively, exhibiting superhydrophobic property.

  17. Role of the buffer solution in the chemical deposition of CdS films for CIGS solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sooho; Kim, Donguk; Baek, Dohyun; Hong, Byoungyou; Yi, Junsin; Lee, Jaehyeong [Sungkyunkwan University, Suwon (Korea, Republic of); Park, Yongseob [Chosun College of Science and and Technology, Gwangju (Korea, Republic of); Choi, Wonseok [Hanbat National University, Daejeon (Korea, Republic of)

    2014-05-15

    In this work, the effects of NH{sub 4}Ac on the structural and the electro-optical properties of CdS films were investigated. CdS thin films were deposited on soda-lime glass and indium-tin-oxide (ITO) coated glass from a chemical bath containing 0.025 M cadmium acetate, 0 M ∼ 0.2 M ammonium acetate, 0.5 M thiourea, and ammonia. Cadmium acetate was the cadmium source, ammonium acetate served as a buffer, ammonia was the complexing agent, and thiourea was the source of sulfur. A commonly- available chemical bath deposition system was successfully modified to obtain precise control over the pH of the solution at 75 .deg. C during the deposition. Chemically deposited CdS films were studied by using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), optical transmittance, and electrical resistivity measurements.

  18. Chemical spray deposition of zinc oxide nanostructured layers from zinc acetate solutions

    Energy Technology Data Exchange (ETDEWEB)

    Dedova, T.; Klauson, J.; Mere, A.; Volobujeva, O.; Krunks, M. [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia); Badre, C.; Pauporte, T. [Laboratoire d' Electrochimie et de Chimie Analytique, UMR 7575, ENSCP, Paris (France); Nisumaa, R. [Centre for Materials Research, Tallinn University of Technology, Tallinn (Estonia)

    2008-10-15

    Zinc oxide (ZnO) films were deposited by chemical spray from zinc acetate aqueous solutions using continuous and pulsed spray modes. ZnO films were characterized by scanning electron microscopy, atomic force microscopy, optical transmittance, and water contact angle (CA) measurements. ZnO films with highly structured surfaces comprising nanoneedles or nanorods with root mean square roughness (Sq) up to 60 nm were grown using the continuous spray mode. Doping with In or using pulsed spray mode leads to smoother ZnO surfaces with Sq of 20 nm. The optical transmittance of the film is controlled by its surface morphology and internal scattering. Water contact angle measurements reveal that as-sprayed ZnO films with nanoneedle or nanorod-like crystals on the surface are hydrophilic with CA{proportional_to}10 . Structured surfaces become hydrophobic with CA{proportional_to}134 after treatment with stearic acid. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Effective surface modification by chemical solution deposition for flexible metal substrates

    Science.gov (United States)

    Du, Wei; Bai, Yue-Ling; Wang, Jing; Fang, Jianhui; Fan, Feng; Liu, Zhiyong; Guo, Yanqun; Bai, Chuanyi; Cai, Chuanbing

    2017-03-01

    Solution deposition planarization (SDP) was used to modify the flexible metal substrates for high temperature superconductor (HTS) tapes to ensure an available and effective surface for subsequent growth of buffer films. The surface morphologies with different tape speeds and coating layers were systematically investigated. 16 layers SDP-films decreased the surface roughness (RMS) from 11.74 to 0.788 nm for Hastelloy C-276 and 12 layers SDP-films decreased the RMS from 20.93 to 0.903 nm for SUS 304. Follow-up study confirmed that the low value of RMS (coated conductor, which further reduced the cost of raw materials.

  20. Microstructure and Mechanics of Superconductor Epitaxy via the Chemical Solution Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Frederick F. Lange

    2006-11-30

    Executive Summary: Initially the funds were sufficient funds were awarded to support one graduate student and one post-doc. Lange, though other funds, also supported a graduate intern from ETH Zurich, Switzerland for a period of 6 months. The initial direction was to study the chemical solution deposition method to understand the microstructural and mechanical phenomena that currently limit the production of thick film, reliable superconductor wires. The study was focused on producing thicker buffer layer(s) on Ni-alloy substrates produced by the RABiTS method. It focused on the development of the microstructure during epitaxy, and the mechanical phenomena that produce cracks during dip-coating, pyrolysis (decomposition of precursors during heating), crystallization and epitaxy. The initial direction of producing thicker layers of a know buffer layer material was redirected by co-workers at ORNL, in an attempt to epitaxially synthesize a potential buffer layer material, LaMnO3, via the solution route. After a more than a period of 6 months that showed that the LaMnO3 reacted with the Ni-W substrate at temperatures that could produce epitaxy, reviewers at the annual program review strongly recommended that the research was not yielding positive results. The only positive result presented at the meeting was that much thicker films could be produce by incorporating a polymer into the precursor that appeared to increase the precursor’s resistance to crack growth. Thus, to continue the program, the objectives were changed to find compositions with the perovskite structure that would be a) chemically compatible with either the Ni-W RABiTS or the MgO IBAD Ni-alloy substrates, and produce a better lattice parameter fit between either of the two substrates. At the start of the second year, the funding was reduced to 2/3’s of the first year level, which required the termination of the post-doc after approximately 5 months into the second year. From then on, further

  1. Epitaxial chemical deposition of ZnO nanocolumns from NaOH solutions.

    Science.gov (United States)

    Peterson, Renee B; Fields, Clark L; Gregg, Brian A

    2004-06-01

    A new method of depositing expitaxial ZnO nanocolumns on sputter-coated ZnO substrates is described that utilizes supersaturated zincate species in sodium hydroxide solutions and requires no complexing agents. Uniform arrays of columns are grown reproducibly over entire substrates in 10-50 min. Columns are 50-2000 nm long and 50-100 nm wide. Strict substrate cleaning and/or preparation was not necessary with this method, in contrast to many other techniques, probably because the high pH generates a reproducible surface. The interfacial properties of the substrate are critical to lowering the activation energy for columnar growth; therefore films grow only on substrates precoated with ZnO, not on bare glass or ITO- or SnO2-coated glass. Factors affecting the column growth are elucidated, and experimental observations are correlated with crystal growth theory.

  2. TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition

    Directory of Open Access Journals (Sweden)

    Zorica Branković

    2012-06-01

    Full Text Available Lanthanum nickelate (LNO is a perovskite oxide material with metallic conductivity in a wide temperature range which makes it suitable for application as electrode material for thin films. In this paper LNO thin films were prepared by polymerizable complex method from the diluted citrate solutions. Precursor solutions were spin coated onto Si-substrates with amorphous layer of SiO2. Deposited layers were thermally treated from the substrate side with low heating rate (1 °/min up to 700 °C and finally annealed for 10 hours. Results of AFM and FESEM showed that films are very smooth (Ra = 4 nm, dense, crack-free and with large square-shaped grains (170 nm. According to FESEM and TEM results the obtained four-layered film was only 65 nm thin. EBSD and XRD analyses confirmed polycrystalline microstructure of the films without preferential orientation. It was concluded that the presence of SiO2 layer on Si substrate prevents epitaxial or oriented growth of LNO.

  3. Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

    Energy Technology Data Exchange (ETDEWEB)

    Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Reguig, B.A.; Khelil, A. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Benchouk, K. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France)], E-mail: Jean-Christian.Bernede@univ-nantes.fr

    2008-07-15

    NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl{sub 2}.6H{sub 2}O), nickel nitrate hexahydrate (Ni(NO{sub 3}){sub 2}.6H{sub 2}O), nickel hydroxide hexahydrate (Ni(OH){sub 2}.6H{sub 2}O), nickel sulfate tetrahydrate (NiSO{sub 4}.4H{sub 2}O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 deg. C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl{sub 2} and Ni(NO{sub 3}){sub 2} precursors. These films have been post-annealed at 425 deg. C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10{sup -2} Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

  4. Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition.

    Science.gov (United States)

    Carretero-Genevrier, Adrián; Gich, Martí

    2015-12-21

    This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of the material to induce the gel crystallization and the growth of the quartz film. The formation of a silica gel is based on the reaction of a tetraethyl orthosilicate and water, catalyzed by HCl, in ethanol. However, the solution contains two additional components that are essential for preparing mesoporous epitaxial quartz films from these silica gels dip-coated on Si. Alkaline earth ions, like Sr(2+) act as glass melting agents that facilitate the crystallization of silica and in combination with cetyl trimethylammonium bromide (CTAB) amphiphilic template form a phase separation responsible of the macroporosity of the films. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth.

  5. Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition

    Indian Academy of Sciences (India)

    Jiwen Xu; Zupei Yang; Yupei Zhang; Xiaowen Zhang; Hua Wang

    2014-12-01

    ZnMn2O4 active layer for resistance random access memory (RRAM) was deposited on p+-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 102 and long retention times of > 105 s. The conduction mechanism of the Ag/ZnMn2O4/p+-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.

  6. Effect of Annealing Temperature on the Optical Spectra of CdS Thin Films Deposited at Low Solution Concentrations by Chemical Bath Deposition (CBD Technique

    Directory of Open Access Journals (Sweden)

    Zahid Rizwan

    2011-02-01

    Full Text Available Two different concentrations of CdCl2 and (NH22CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD technique. CdCl2 (0.000312 M and 0.000625 M was employed as a source of Cd2+ while (NH22CS (0.00125 M and 0.000625 M for S2− at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl2 (0.000312 M. Optical energy band gap (Eg, Urbach energy (Eu and absorption coefficient (α have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97% was obtained for the air-annealed films at higher temperature at CdCl2 (0.000312 M.

  7. Surface engineering of biaxial Gd2Zr2O7 thin films deposited on Ni–5at%W substrates by a chemical solution method

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; Liu, Min;

    2012-01-01

    crystal structure along the film thickness observed by a transmission electron microscope. On the basis of the enhanced understanding of the crystallization processes, we demonstrate a possibility of engineering the surface morphology and texture in the film deposited on technical substrates using...... a chemical solution deposition route....

  8. Effect of annealing temperature on the optical spectra of CdS thin films deposited at low solution concentrations by Chemical Bath Deposition (CBD) Technique.

    Science.gov (United States)

    Rizwan, Zahid; Zakaria, Azmi; Mohd Ghazali, Mohd Sabri; Jafari, Atefeh; Din, Fasih Ud; Zamiri, Reza

    2011-02-22

    Two different concentrations of CdCl(2) and (NH(2))(2)CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD) technique. CdCl(2) (0.000312 M and 0.000625 M) was employed as a source of Cd(2+) while (NH(2))(2)CS (0.00125 M and 0.000625 M) for S(2-) at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl(2) (0.000312 M). Optical energy band gap (E(g)), Urbach energy (E(u)) and absorption coefficient (α) have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97%) was obtained for the air-annealed films at higher temperature at CdCl(2) (0.000312 M).

  9. Chemical solution deposition method of fabricating highly aligned MgO templates

    Science.gov (United States)

    Paranthaman, Mariappan Parans [Knoxville, TN; Sathyamurthy, Srivatsan [Knoxville, TN; Aytug, Tolga [Knoxville, TN; Arendt, Paul N [Los Alamos, NM; Stan, Liliana [Los Alamos, NM; Foltyn, Stephen R [Los Alamos, NM

    2012-01-03

    A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La.sub.2Zr.sub.2O.sub.7 or Gd.sub.2Zr.sub.2O.sub.7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

  10. Approaches Towards the Minimisation of Toxicity in Chemical Solution Deposition Processes of Lead-Based Ferroelectric Thin Films

    Science.gov (United States)

    Bretos, Iñigo; Calzada, M. Lourdes

    The ever-growing environmental awareness in our lives has also been extended to the electroceramics field during the past decades. Despite the strong regulations that have come up (RoHS directive), a number of scientists work on ferroelectric thin film ceramics containing lead. Although the use of these materials in piezoelectric devices is exempt from the RoHS directive, successful ways of decreasing toxic load must be considered a crucial challenge. Within this framework, a few significant advances are presented here, based on different Chemical Solution Deposition strategies. Firstly, the UV sol-gel photoannealing technique (Photochemical Solution Deposition) avoids the volatilisation of hazardous lead from lead-based ferroelectric films, usually observed at conventional annealing temperatures. The key point of this approach lies in the photo-excitation of a few organic components in the gel film. There is also a subsequent annealing of the photo-activated film at temperatures low enough to prevent lead volatilisation, but allowing crystallisation of the pure perovskite phase. Ozonolysis of the films is also promoted when UV-irradiation is carried out in an oxygen atmosphere. This is known to improve electrical response. By this method, nominally stoichiometric solution (i.e., a solution without PbO-excess) derived films with reliable properties, and free of compositional gradients, may be prepared at temperatures as low as 450°C. A PtxPb interlayer between the ferroelectric film and the Pt silicon substrate is observed in the heterostructure of the low-temperature processed films. This is when lead excesses are present in their microstructure. The influence of this interface on the compositional depth profile of the films will be discussed. We will evaluate the feasibility of the UV sol-gel photoannealing technique in fabricating functional films while fulfilling environmental and technological aspects (like integration with silicon IC technology). The second

  11. In-Situ Synchrotron X-ray Study of the Phase and Texture Evolution of Ceria and Superconductor Films Deposited by Chemical Solution Method

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; He, Dong

    2012-01-01

    In situ synchrotron x-ray diffraction is used to study the phase and texture formation of ceria based films and superconductor films deposited by the chemical solution method on technical substrates. Combined analysis using in situ synchrotron x-ray diffraction, thermogravimetry/differential ther......In situ synchrotron x-ray diffraction is used to study the phase and texture formation of ceria based films and superconductor films deposited by the chemical solution method on technical substrates. Combined analysis using in situ synchrotron x-ray diffraction, thermogravimetry...

  12. Synthesis and characterization of nanoporous strontium-doped lanthanum cobaltite thin film using metal organic chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jun-Sik [Department of Mechanical Convergence Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr [Department of Mechanical Convergence Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2016-01-29

    By employing strontium as a dopant of lanthanum cobaltite (LaCoO{sub 3}), strontium-doped lanthanum cobaltite (La{sub 1−x}Sr{sub x}CoO{sub 3−δ}, LSC) thin film was fabricated using a metal organic chemical solution deposition (MOCSD) method. Lanthanum nitrate hexahydrate [La(NO{sub 3}){sub 3}6H{sub 2}O], strontium acetate [Sr(CH{sub 3}COO){sub 2}], and cobalt acetate tetrahydrate [Co(CH{sub 3}COO){sub 2}4H{sub 2}O] were used as precursors. The coating process was performed through a spin coating method on a substrate, which were then heat treated under various temperature conditions. Electrical properties, microstructures, and crystalline structures with respect to sintering temperature were analyzed. According to these analyses, the change in surface morphology, phase shift, and conductive properties were closely related, which could explain their respective behaviors. Furthermore, sintered strontium-doped lanthanum perovskite oxides showed various conductivities according to the amount of dopant. With the molar ratio of strontium that is stoichiometrically equivalent to lanthanum (La{sub 0.5}Sr{sub 0.5}CoO{sub 3−δ}) thin film showed the best conductivity in the sintering temperature range of 650–700 °C, with perovskite phases formed at this temperature condition. As the electrically conductive properties of the thin film are a function of thickness, the films were coated several times to a thickness of approximately 300 nm, with the lowest resistivity (approximately 9.06 × 10{sup −4} Ω cm) observed at the optimized sintering temperature and solution composition. - Highlights: • LSC thin film was fabricated by metal organic chemical solution deposition (MOCSD). • The film shows good agreement on the electrical conductivity of LSC by conventional methods. • The properties of LSC film are influenced by the surface morphology and crystalline phase. • Optimal molar ratio of strontium for the highest conductivity was investigated.

  13. Fe-doped epitaxial YBCO films prepared by chemical solution deposition

    Institute of Scientific and Technical Information of China (English)

    Hong Zhang; Yong Zhao; Wentao Wang; Min Pan; Ming Lei

    2014-01-01

    YBa2Cu3O7-d (YBCO)-coated conductors have wide-ranging potential in large-scale applications such as superconducting maglev trains and superconducting elec-tric cables, but low current carrying capability restrains the practical application of YBCO-coated conductors at high temperatures and high magnetic fields. It is crucial to develop YBCO-coated conductors with high critical cur-rent density. In this paper, epitaxial, dense, smooth, and crack-free Fe-doped YBCO films were prepared on a LaAlO3 single crystal substrate via a fluorine-free polymer-assisted metal organic deposition method. The effects of the dilute Fe doping on microstructure and superconduc-ting character of YBCO films were investigated. The crit-ical temperature for superconducting of the Fe-doped YBCO films decreases slightly. However, the in-field critical current density of YBCO films improves with dilute Fe doping of amounts less than x=0.005, compared to the pure YBCO film. Therefore, the current carrying capability of YBCO film can improve by doping with appropriate amounts of Fe. This means that dilute Fe doping in YBCO films may be a feasible way to prepare high-performance coated conductors.

  14. Superconducting Dy1-x(Gd,Yb)xBa2Cu3O7-δ thin films made by Chemical Solution Deposition

    DEFF Research Database (Denmark)

    Opata, Yuri Aparecido; Wulff, Anders Christian; Hansen, Jørn Otto Bindslev

    2016-01-01

    Dy1-x(Gd or Yb)xBa2Cu3O7-δ samples were prepared using chemical solution deposition (CSD), based on trifluoroacetate metal-organic decomposition (MOD) methods. X-ray diffraction results demonstrated the formation of the RE123 superconducting phase with a strong in-plane and out-of-plane texture. c...

  15. Preparation of SmBiO3 buffer layer on YSZ substrate by an improved chemical solution deposition route

    Science.gov (United States)

    Zhu, Xiaolei; Pu, Minghua; Zhao, Yong

    2016-12-01

    A quick route for chemical solution deposition (CSD) has been developed to prepare SmBiO3 (SBO) layers on yttria stabilized zirconia (YSZ) substrates rapidly by using of solid state decomposition (SSD) technique. The proper conditions for volatilization of lactic acid, which as solvent in precursor coated layer, and SBO growth are 115°C for 30 min and 794°C for 60 min in flowing Ar gas. The coated layers are amorphous structure of mixture oxides and quasi-crystal structure of SBO before and after growth, respectively. The total time by this quick CSD route for organic solvent volatilization, salts decomposed and layer growth is not up to 2 h, which are much less than that needed for traditional CSD of over 10 h. SBO layer is directly epitaxial growth on YSZ substrate without any lattice rotation. SBO layer prepared by this quick route as well as that by traditional route are suitable for the growth of YBCO. The superconducting transition temperature and critical current density of the coated YBCO layer on SBO/YSZ obtained by this quick route are up to 90 K and 1.66 MA/cm2. These results may be the usable reference for continuous preparation of SBO buffer layer on IBAD-YSZ/Ni-based alloy tapes.

  16. Fatigue property of a bioabsorbable magnesium alloy with a hydroxyapatite coating formed by a chemical solution deposition.

    Science.gov (United States)

    Hiromoto, Sachiko; Tomozawa, Masanari; Maruyama, Norio

    2013-09-01

    A hydroxyapatite (HAp) coating was directly formed on an extruded AZ31 magnesium alloy by a single-step chemical solution deposition. The HAp coating consists of an outer porous HAp layer, an inner continuous HAp layer, and a thin intermediate MgO layer, and the inner HAp and MgO layers are composed of nanocrystals. Tensile and fatigue tests were performed on the HAp-coated AZ31 in air. The HAp coating microscopically showed neither crack nor detachment at 5% static elongation (1.5% residual strain). With further elongation under tensile stress, cracks were formed perpendicularly to the tensile direction, and fragments of the coating detached with a fracture inside the inner continuous HAp layer. The fatigue strengths at 10(7) cycles (fatigue limit) of HAp-coated and mechanically polished AZ31 were ca. 80 MPa and ca. 90 MPa, respectively. The slight decrease in the fatigue limit with the HAp coating is attributed to small pits with a depth of ca. 10 μm formed on the substrate during the HAp-coating treatment. The HAp coating remained on the specimen without cracks after 10(7) cycles at the fatigue limit, which provides ca. 3% cyclic elongation.

  17. Compositionally and structurally modified SrTiO{sub 3} thin films prepared by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Spitzner, Dirk; Gutmann, Emanuel; Reibold, Marianne; Meyer, Dirk C. [Institut fuer Strukturphysik, Technische Universitaet Dresden (Germany); Mahltig, Boris [GMBU e.V., Arbeitsgruppe Funktionelle Schichten, Dresden (Germany)

    2009-07-01

    For electronic and architectural design of functional electroceramic devices, materials with a perovskite-type of structure play a major role. For high-k dielectric, sensing and thermal switching applications the introduction of Barium into SrTiO{sub 3}(STO) allows tuning the electrical properties by tuning the paraelectric-to-ferroelectric transition temperature. For thin film preparation a classic sol-gel route was modified by refluxing as well as solvothermal treatment of the as-synthesized sols. For treated sols the decomposition, phase evolution and transition behaviour differed and from X-ray diffraction (XRD) we observed a supression of foreign phases and a higher degree of compositional homogeneity. In this context also the homologous series of perovskite-related Ruddlesden-Popper (RP) phases promise an engineering of electrical properties by selecting a specific member. Exemplarily we realised the chemical solution deposition of epitaxial thin films of SrO(SrTiO{sub 3}){sub n} RP phases (n=1,2,3) on STO substrates. Structural characteristics of the films were analysed by means of XRD and HRTEM. An application as buffer layers exhibiting tuneable dielectric properties is conceivable.

  18. YBa{sub 2}Cu{sub 3}O{sub 7-x} thin films prepared by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Apetrii, Claudia

    2009-11-25

    The discovery of superconductivity in ceramic materials by Bednorz and Mueller in early 1987, immediately followed by Wu et al., who showed that YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) becomes superconducting (92 K) well above the boiling point of nitrogen (77 K) created a great excitement in superconductivity research. Potential applications of high T{sub c}-superconductors require large critical currents and high-applied magnetic fields. Effective ways to increase the critical current density at high magnetic fields in YBCO are the introduction of nanoparticles and chemical substitution of yttrium by other rare earth elements. Since low costs and environmental compatibility are essential conditions for the preparation of long length YBCO films, the cost effective chemical solution deposition (CSD) procedure was selected, given that no vacuum technology is required. To reveal the flexibility and the good optimization possibilities of the CSD approach two main processes were chosen for comparison: a fluorine-free method, namely the polymer-metal precursor technique, and a fluorine-based method, the metalorganic deposition (MOD) using the trifluoroacetates (TFA) technique. Sharp transition temperature widths {delta}T{sub c} of 1.1 K for the polymer metal method, 0.8 K for TFA method and critical current densities J{sub c} of {approx}3.5 MA/cm{sup 2} shows that high quality YBCO thin films can be produced using both techniques. Especially interesting is the magnetic field dependence of the critical current density J{sub c}(B) of the Y(Dy)BCO (80 %) films showing that for the lower magnetic fields the critical current density J{sub c}(B) is higher for a standard YBCO film, but at fields higher than 4.5 T the critical current density J{sub c}(B) of Y(Dy)BCO is larger than that for the YBCO. Above 8 T, J{sub c}(B) of the Y(Dy)BCO film is more than one order of magnitude higher than in pure YBCO film. (orig.)

  19. Manufacture of Bi-cuprate thin films on MgO single crystal substrates by chemical solution deposition

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Bertelsen, Christian Vinther; Andersen, Niels Hessel

    2014-01-01

    Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors dissolved in xylene. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c...

  20. Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution

    Science.gov (United States)

    Sandoval-Paz, M. G.; Rodríguez, C. A.; Porcile-Saavedra, P. F.; Trejo-Cruz, C.

    2016-07-01

    Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films.

  1. Fluorine doped zinc oxide thin films deposited by chemical spray, starting from zinc pentanedionate and hydrofluoric acid: Effect of the aging time of the solution

    Energy Technology Data Exchange (ETDEWEB)

    Biswal, R.R. [Amity Institute of Nanotechnology, Amity University, Sector-125, Super Express Highway, Noida 201301 (India); Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, CINVESTAV-IPN, SEES, Apartado Postal 14740, Mexico, D.F., 07000 (Mexico); Velumani, S.; Babu, B.J.; Maldonado, A. [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, CINVESTAV-IPN, SEES, Apartado Postal 14740, Mexico, D.F., 07000 (Mexico); Tirado-Guerra, S. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, IPN, Apartado Postal 75-544, Mexico, D.F., 07300 (Mexico); Castaneda, L. [Instituto de Fisica, Universidad Autonoma de Puebla, Apartado Postal J-48, Puebla 72570 (Mexico); Olvera, M. de la L, E-mail: molvera@cinvestav.mx [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, CINVESTAV-IPN, SEES, Apartado Postal 14740, Mexico, D.F., 07000 (Mexico)

    2010-10-25

    Fluorine doped zinc oxide thin films, ZnO:F, were deposited on sodocalcic glass substrates, starting from zinc pentanedionate and hydrofluoric acid, by the chemical spray technique. The effect of the aging time of the starting solution on the electrical, structural, morphological and optical characteristics of the ZnO thin films was studied. Uniform, adherent, and mirror-like films were deposited at different days. A high electrical resistivity, was found in the films deposited the first day. However, a decrease in the resistivity, until a minimum, in the order of 3 x 10{sup -2} {Omega} cm was reached for films deposited after the starting solution was aged for twelve days. The films fit well with the hexagonal, wurtzite-type ZnO structure, with a (0 0 2) preferential growth. Variation in the grain size was observed as a consequence of the aging of the solution. An average crystallite size varied between 17.3 and 22.8 nm due to aging effect, and some variations in surface morphology were encountered. All the films are highly transparent in the near UV-vis range, with an average transmittance oscillating between 83% and 90%.

  2. Fabrication of Lead-Free Bi0.5Na0.5TiO3 Thin Films by Aqueous Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Mads Christensen

    2017-02-01

    Full Text Available Piezoelectric ceramics are widely used in actuator applications, and currently the vast majority of these devices are based on Pb ( Zr , Ti O 3 , which constitutes environmental and health hazards due to the toxicity of lead. One of the most promising lead-free material systems for actuators is based on Bi 0 . 5 Na 0 . 5 TiO 3 (BNT, and here we report on successful fabrication of BNT thin films by aqueous chemical solution deposition. The precursor solution used in the synthesis is based on bismuth citrate stabilized by ethanolamine, NaOH , and a Ti-citrate prepared from titanium tetraisopropoxide and citric acid. BNT thin films were deposited on SrTiO 3 and platinized silicon substrates by spin-coating, and the films were pyrolized and annealed by rapid thermal processing. The BNT perovskite phase formed after calcination at 500 °C in air. The deposited thin films were single phase according to X-ray diffraction, and the microstructures of the films shown by electron microscopy were homogeneous and dense. Decomposition of the gel was thoroughly investigated, and the conditions resulting in phase pure materials were identified. This new aqueous deposition route is low cost, robust, and suitable for development of BNT based thin film for actuator applications.

  3. The Effect of Sintering Oxygen Partial Pressure on a SmBiO3 Buffer Layer for Coated Conductors via Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Xiaolei Zhu

    2016-10-01

    Full Text Available The application of high-temperature YBa2Cu3O7−δ (YBCO superconducting material is a considerable prospect for the growing energy shortages. Here, SmBiO3 (SBO films were deposited on (100-orientated yttrium-stabilized zirconia (YSZ simple crystal substrates via the chemical solution deposition (CSD approach for coated conductors, and the effects of sintering oxygen partial pressure on SBO films were studied. The crystalline structures and surface morphologies of SBO films were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, and atomic force microscope (AFM. The optimized growth temperature, the intensity ratios of the SBO (200 peak to the SBO (111 peak, and the crystallinities of SBO films increased with the sintering oxygen partial pressure. The SEM and AFM images displayed a smooth and well-distributed surface in the argon atmosphere. The subsequent YBCO films with superconducting transition temperatures (Tc = 89.5 K, 90.2 K, and 86.2 K and critical current densities (Jc = 0.88 MA/cm2, 1.69 MA/cm2, and 0.09 MA/cm2; 77 K, self-field were deposited to further check the qualities of the SBO layer. These results indicated that sintering oxygen partial pressure had an effect on the epitaxial growth of the SBO buffer layer and YBCO superconducting properties. The experimental results may be a usable reference for the epitaxial growth of YBCO-coated conductors and other oxides.

  4. Simple Chemical Vapor Deposition Experiment

    Science.gov (United States)

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  5. ELNES study of chemical solution deposited SrO(SrTiO{sub 3}){sub n} Ruddlesden-Popper films: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Riedl, T., E-mail: Thomas.Riedl@tu-dresden.de [IFW Dresden, PF 270116, D-01171 Dresden (Germany); Gemming, T. [IFW Dresden, PF 270116, D-01171 Dresden (Germany); Weissbach, T. [Institut fuer Physikalische Chemie, Technische Universitaet Dresden, D-01062 Dresden (Germany); Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany); Seifert, G. [Institut fuer Physikalische Chemie, Technische Universitaet Dresden, D-01062 Dresden (Germany); Gutmann, E. [Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany); Zschornak, M. [Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany); Forschungszentrum Dresden-Rossendorf, PF 510119, D-01314 Dresden (Germany); Meyer, D.C. [Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany); Gemming, S. [Forschungszentrum Dresden-Rossendorf, PF 510119, D-01314 Dresden (Germany)

    2009-12-15

    This article analyzes electron energy-loss near-edge fine structures of the SrO(SrTiO{sub 3}){sub n=1} Ruddlesden-Popper system and of the parent compounds SrTiO{sub 3} and SrO by comparison with first principles calculations. For that, the fine structures of chemical solution deposited Ruddlesden-Popper films have been experimentally recorded by means of transmission electron microscopy. Moreover, density of states computations using an all-electron density-functional code have been performed. It is shown that the appearance and shape of the experimental O-K and Ti-L{sub 2,3} fine structure features result from the crystallography-dependent electronic structure of the investigated oxides, which display technologically interesting dielectric as well as lattice-structural properties.

  6. Development of One Meter Long Double-Sided CeO2 Buffered Ni-5at.%W Templates by Reel-to-Reel Chemical Solution Deposition Route

    DEFF Research Database (Denmark)

    Yue, Zhao; Konstantopoulou, K.; Wulff, Anders Christian

    2013-01-01

    High performance long-length coated conductors fabricated using various techniques have attracted a lot of interest recently. In this work, a reel-to-reel design for depositing double-sided coatings on long-length flexible metallic tapes via a chemical solution method is proposed and realized....... The major achievement of the design is to combine the dip coating and drying processes in order to overcome the technical difficulties of dealing with the wet films on both sides of the tape. We report the successful application of the design to fabricate a one-meterlong double side coated CeO2/Ni − 5at...... layer are 7.2◦ and 5.8◦ with standard deviation of 0.26◦ and 0.34◦, respectively, being indicative of the high quality epitaxial growth of the films prepared in the continuous manner. An all chemical solution derived YBCOLow−TFA/Ce0.9La0.1O2/Gd2Zr2O7/CeO2 structure is obtained on a short sample...

  7. Growth of thick La{sub 2}Zr{sub 2}O{sub 7} buffer layers for coated conductors by polymer-assisted chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xin, E-mail: xzhang@my.swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Xia, Yudong [State Key Lab of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Guo, Chunsheng [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhang, Yong [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, Han [Department of Physics, Peking University, Beijing 100871 (China)

    2015-06-15

    Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La{sub 2}Zr{sub 2}O{sub 7} (LZO) epitaxial films have been deposited on LaAlO{sub 3} (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm{sup 2} at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors.

  8. Chemically sprayed ZnO:F thin films deposited from diluted solutions: Effect of the time of aging on physical characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Tirado-Guerra, S. [Escuela Superior de Fisica y Matematicas del Instituto Politecnico Nacional, Apdo. Postal 75-544, Mexico D. F., 07300 (Mexico); de la L. Olvera, M.; Maldonado, A. [Departamento de Ingenieria Electrica, SEES, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D. F., 07000 (Mexico); Castaneda, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510, D.F. (Mexico)

    2006-09-22

    Transparent and conductive fluorine-doped zinc oxide (ZnO:F) thin films were deposited on glass substrates by the chemical-spray technique starting from a diluted solution of zinc acetate and hydrofluoric acid. The effect of the aging time of the starting solution on the electrical, structural, morphological and optical characteristics of ZnO:F thin films was observed and analyzed. The resistivity of the ZnO:F thin films decreases as a more aged solution is used, reaching a saturation value of 6x10{sup -2}{omega}cm. X-ray diffraction reveals that the films are polycrystalline in nature with a (100) preferential growth in almost all the cases. High-resolution scanning electron microscopy clearly reveals that the films are composed of nanoparticles of spherical shape, whose average diameter is in the order of 15nm that matches well with the crystallite size calculated from X-ray diffraction. This result shows that fluorine incorporation effectively inhibits grain growth. This, in turn, produces a porous structure. Also, the increase in the time of aging enhances slightly the transmittance of the films. (author)

  9. Transparent and antibacterial Cu{sub 2}Y{sub 2}O{sub 5} thin films by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yung-Po [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan (China); Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan (China); Chang, Chih-Hao [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan (China); Xuan, Caihua; Cheng, Gary J. [Birck Nanotechnology Center and School of Industrial Engineering, Purdue University, West Lafayette, IN 47906 (United States)

    2014-11-03

    A chemical solution method was used to fabricate Cu–Y–O thin film on the glass substrate. The crystal structures, microstructures, optical properties and antibacterial activities of thin films were characterized and investigated by grazing-incidence X-ray diffraction, Scanning electron microscopy, transmittance spectra, and antibiotics test. The fabrication process involved the spinning of mixture of the metal nitrite salts solution and poly oxyethylene(10)octylphenyl ether on the glass substrates, followed by a two-step annealing in a furnace. The X-ray diffraction indicated that a single phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained at 800 °C, while the higher temperature, 900 °C, resulted in the mixture of delafossite-type CuYO{sub 2} and CuO phases. The bandgap of Cu{sub 2}Y{sub 2}O{sub 5} was found to be 3.52 eV as per the transmittance spectra in Tauc plot. The best transmission, 80%, was achieved by the transparent thin film coating of 70 nm thick Cu{sub 2}Y{sub 2}O{sub 5}. The antibacterial efficacy of Escherichia coli on Cu{sub 2}Y{sub 2}O{sub 5} film surface exceeded 99%, demonstrating its potential in the transparent antibacterial coatings. - Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by chemical solution deposition method. • Cu{sub 2}Y{sub 2}O{sub 5} thin films show high transparency and excellent antibacterial properties. • The present study demonstrated a transparent antibacterial coating.

  10. High-throughput analysis for preparation, processing and analysis of TiO{sub 2} coatings on steel by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cuadrado Gil, Marcos, E-mail: Marcos.cuadradogil@ugent.be [SCRIPTS - Department of Inorganic and Physical Chemistry, Ghent University, Krijgslaan 281 (S3) (Belgium); Van Driessche, Isabel, E-mail: Isabel.VanDriessche@ugent.be [SCRIPTS - Department of Inorganic and Physical Chemistry, Ghent University, Krijgslaan 281 (S3) (Belgium); Van Gils, Sake, E-mail: Sake.Vangils@arcelormittal.com [OCAS - ArcelorMittal Gent R and D Centre, Pres. J.F. Kennedylaan 3, Zelzate B-9060 (Belgium); Lommens, Petra, E-mail: Petra.Lommens@ugent.be [SCRIPTS - Department of Inorganic and Physical Chemistry, Ghent University, Krijgslaan 281 (S3) (Belgium); Castelein, Pieter, E-mail: Pieter.Castelein@flamac.be [Flamac - A Division of SIM, Technologiepark 903, Zwijnaarde 9052 (Belgium); De Buysser, Klaartje, E-mail: Klaartje.DeBuysser@ugent.be [SCRIPTS - Department of Inorganic and Physical Chemistry, Ghent University, Krijgslaan 281 (S3) (Belgium)

    2012-11-05

    Highlights: Black-Right-Pointing-Pointer High-throughput preparation of TiO{sub 2} aqueous precursors. Black-Right-Pointing-Pointer Analysis of stability and surface tension. Black-Right-Pointing-Pointer Deposition of TiO{sub 2} coatings. - Abstract: A high-throughput preparation, processing and analysis of titania coatings prepared by chemical solution deposition from water-based precursors at low temperature ( Almost-Equal-To 250 Degree-Sign C) on two different types of steel substrates (Aluzinc Registered-Sign and bright annealed) is presented. The use of the high-throughput equipment allows fast preparation of multiple samples saving time, energy and material; and helps to test the scalability of the process. The process itself includes the use of IR curing for aqueous ceramic precursors and possibilities of using UV irradiation before the final sintering step. The IR curing method permits a much faster curing step compared to normal high temperature treatments in traditional convection devices (i.e., tube furnaces). The formulations, also prepared by high-throughput equipment, are found to be stable in the operational pH range of the substrates (6.5-8.5). Titanium alkoxides itself lack stability in pure water-based environments, but the presence of the different organic complexing agents prevents it from hydrolysis and precipitation reactions. The wetting interaction between the substrates and the various formulations is studied by the determination of the surface free energy of the substrates and the polar and dispersive components of the surface tension of the solutions. The mild temperature program used for preparation of the coatings however does not lead to the formation of pure crystalline material, necessary for the desired photocatalytic and super-hydrophilic behavior of these coatings. Nevertheless, some activity can be reported for these amorphous coatings by monitoring the discoloration of methylene blue in water under UV irradiation.

  11. Aqueous Chemical Solution Deposition of Novel, Thick and Dense Lattice-Matched Single Buffer Layers Suitable for YBCO Coated Conductors: Preparation and Characterization

    Directory of Open Access Journals (Sweden)

    Isabel van Driessche

    2012-09-01

    Full Text Available In this work we present the preparation and characterization of cerium doped lanthanum zirconate (LCZO films and non-stoichiometric lanthanum zirconate (LZO buffer layers on metallic Ni-5% W substrates using chemical solution deposition (CSD, starting from aqueous precursor solutions. La2Zr2O7 films doped with varying percentages of Ce at constant La concentration (La0.5CexZr1−xOy were prepared as well as non-stoichiometric La0.5+xZr0.5−xOy buffer layers with different percentages of La and Zr ratios. The variation in the composition of these thin films enables the creation of novel buffer layers with tailored lattice parameters. This leads to different lattice mismatches with the YBa2Cu3O7−x (YBCO superconducting layer on top and with the buffer layers or substrate underneath. This possibility of minimized lattice mismatch should allow the use of one single buffer layer instead of the current complicated buffer architectures such as Ni-(5% W/LZO/LZO/CeO2. Here, single, crack-free LCZO and non-stoichiometric LZO layers with thicknesses of up to 140 nm could be obtained in one single CSD step. The crystallinity and microstructure of these layers were studied by XRD, and SEM and the effective buffer layer action was studied using XPS depth profiling.

  12. Determination of electroless deposition by chemical nickeling

    Directory of Open Access Journals (Sweden)

    M. Badida

    2013-07-01

    Full Text Available Increasing of technical level and reliability of machine products in compliance with the economical and ecological terms belongs to the main trends of the industrial development. During the utilisation of these products there arise their each other contacts and the interaction with the environment. That is the reason for their surface degradation by wear effect, corrosion and other influences. The chemical nickel-plating allows autocatalytic deposition of nickel from water solutions in the form of coherent, technically very profitable coating without usage of external source of electric current. The research was aimed at evaluating the surface changes after chemical nickel-plating at various changes of technological parameters.

  13. Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films

    Science.gov (United States)

    Batra, Vaishali; Ramana, C. V.; Kotru, Sushma

    2016-08-01

    We report the effect of post deposition annealing temperature (Ta = 550 and 750 °C) on the surface morphology, chemical bonding and structural development of lanthanum doped lead zirconate titanate (Pb0.95La0.05Zr0.54Ti0.46O3; referred to PLZT) thin films prepared using chemical solution deposition method. Atomic force microscopy demonstrates formation of nanocrystallites in the film annealed at Ta = 750 °C. X-ray photoelectron spectroscopy (XPS) analyses indicate that the binding energies (BE) of the Pb 4f, Zr 3d, and Ti 2p doublet experience a positive energy shift at Ta = 750 °C, whereas the BE of O 1s and La 3d doublet show a negative shift with respect to the BE of the films annealed at Ta = 750 °C. Thermal induced crystallization and chemical modification is evident from XPS results. The Ar+ sputtering of the films reveals change in oxidation state and chemical bonding between the constituent atoms, with respect to Ta. Raman spectroscopy used to study phonon-light interactions show shift in longitudinal and transverse optical modes with the change in Ta, confirming the change in phase and crystallinity of these films. The results suggest annealing at Ta = 750 °C yield crystalline perovskite PLZT films, which is essential to obtain photovoltaic response from devices based on such films.

  14. Comparative study on substitution effects in BiFeO{sub 3} thin films fabricated on FTO substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Xu; Tan, Guoqiang, E-mail: tan3114@163.com; Hao, Hangfei; Ren, Huijun

    2013-10-01

    Pure BiFeO{sub 3} (BFO), BiFe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BFCO) and Bi{sub 0.90}Gd{sub 0.10}Fe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BGFCO) thin films were successfully deposited on FTO substrates by chemical solution deposition technique. The field emission scanning electron microscope reveals that the surface morphology of the BGFCO thin film becomes more compact and uniform than that of the other two films. A slight lattice distortion is created in the BFCO thin film, whereas 10% Gd doping gives rise to tetragonal phase transition and (1 1 0) preferentially oriented film texture for the BGFCO thin film, as evidenced by Raman scattering spectra and X-ray diffraction analyses. X-ray photoelectron spectroscopy analyses clarify that Co-doping results in the increase of oxygen vacancy concentration in the BFCO film, while further introduction of Gd into the BFCO lattice can decrease oxygen vacancy concentration, and the concentrations of Fe{sup 2+} ions in the BFCO and BGFCO thin films are less than that in the BFO counterpart. The BFCO film shows the improved remanent polarization (P{sub r}) of 11.2 μC/cm{sup 2} compared with that of 1.4 μC/cm{sup 2} for the BFO film. The high breakdown strength, low leakage current density in the high electric filed, improved dielectric properties as well as the increased stereochemical activity of Bi ion lone electron pair of the BGFCO thin film all together contribute to the giant P{sub r} of 139.6 μC/cm{sup 2} at room temperature.

  15. Enhanced performance of sulfur-infiltrated bimodal mesoporous carbon foam by chemical solution deposition as cathode materials for lithium sulfur batteries

    Science.gov (United States)

    Jeong, Tae-Gyung; Chun, Jinyong; Cho, Byung-Won; Lee, Jinwoo; Kim, Yong-Tae

    2017-02-01

    The porous carbon matrix is widely recognized to be a promising sulfur reservoir to improve the cycle life by suppressing the polysulfide dissolution in lithium sulfur batteries (LSB). Herein, we synthesized mesocellular carbon foam (MSUF-C) with bimodal mesopore (4 and 30 nm) and large pore volume (1.72 cm2/g) using MSUF silica as a template and employed it as both the sulfur reservoir and the conductive agent in the sulfur cathode. Sulfur was uniformly infiltrated into MSUF-C pores by a chemical solution deposition method (MSUF-C/S CSD) and the amount of sulfur loading was achieved as high as 73% thanks to the large pore volume with the CSD approach. MSUF-C/S CSD showed a high capacity (889 mAh/g after 100 cycles at 0.2 C), an improved rate capability (879 mAh/g at 1C and 420 mAh/g at 2C), and a good capacity retention with a fade rate of 0.16% per cycle over 100 cycles.

  16. Enhanced performance of sulfur-infiltrated bimodal mesoporous carbon foam by chemical solution deposition as cathode materials for lithium sulfur batteries

    Science.gov (United States)

    Jeong, Tae-Gyung; Chun, Jinyong; Cho, Byung-Won; Lee, Jinwoo; Kim, Yong-Tae

    2017-01-01

    The porous carbon matrix is widely recognized to be a promising sulfur reservoir to improve the cycle life by suppressing the polysulfide dissolution in lithium sulfur batteries (LSB). Herein, we synthesized mesocellular carbon foam (MSUF-C) with bimodal mesopore (4 and 30 nm) and large pore volume (1.72 cm2/g) using MSUF silica as a template and employed it as both the sulfur reservoir and the conductive agent in the sulfur cathode. Sulfur was uniformly infiltrated into MSUF-C pores by a chemical solution deposition method (MSUF-C/S CSD) and the amount of sulfur loading was achieved as high as 73% thanks to the large pore volume with the CSD approach. MSUF-C/S CSD showed a high capacity (889 mAh/g after 100 cycles at 0.2 C), an improved rate capability (879 mAh/g at 1C and 420 mAh/g at 2C), and a good capacity retention with a fade rate of 0.16% per cycle over 100 cycles. PMID:28165041

  17. High performance GdBa{sub 2}Cu{sub 3}O{sub 7-z} film preparation by non-fluorine chemical solution deposition approach

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.T.; Pu, M.H.; Wang, W.W. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y., E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)

    2011-11-15

    Biaxially textured GdBa{sub 2}Cu{sub 3}O{sub 7}-z films with Tc above 93 K have been prepared on (0 0 l) by non-fluorine CSD approach. Nanoparticles with homogeneous distribution are introduced into the GdBCO films as effective pinning centers. A high Jc (77 K, 0 T) of 2.28 MA/cm{sup 2} with slow decreasing Jc-B behavior is observed in the films. Biaxially textured GdBa{sub 2}Cu{sub 3}O{sub 7-z} (GdBCO) films with T{sub c} above 93 K have been prepared on (0 0 l) LaAlO{sub 3} substrate by self-developed non-fluorine polymer-assisted chemical solution deposition (PA-CSD) approach. The GdBCO films show smooth and crack-free morphology. Many nanoscale particles with homogeneous distribution are observed in the GdBCO films, which have not been observed yet in the YBa{sub 2}Cu{sub 3}O{sub 7-z} (YBCO) films prepared by the same processing technique. Besides a high J{sub c} (77 K, 0 T) of 2.28 MA/cm{sup 2}, the optimized GdBCO films show a better J{sub c}-B behavior and an improved high-field J{sub c}, compared to the YBCO films.

  18. Transport properties and microstructure of La0.7Sr0.3MnO3 nanocrystalline thin films grown by polymer-assisted chemical solution deposition

    Institute of Scientific and Technical Information of China (English)

    Min Zhang; Li Lv; Zhantao Wei; Xinsheng Yang; Xin Zhang

    2014-01-01

    Perovskite-based materials can be widely used in the aerospace and transportation field. Perovskite man-ganese oxides La0.7Sr0.3MnO3 (LSMO) thin films were grown on LaAlO3 (100) and Si (100) single crystal sub-strates by the polymer-assisted chemical solution deposi-tion (PACSD) method. Electronic transport behavior, microstructure, and magnetoresistance (MR) of LSMO thin films on different substrates were investigated. The resis-tance of LSMO films fabricated on LaAlO3 substrates is smaller than that on the Si substrates. The magnetic field reduces resistance of LSMO films both on Si and LAO in the wide temperature region, when the insulator-metal transition temperature shifts to higher temperature. The low-field magnetoresistance of LSMO films on Si in low temperature range at 1 T is larger than that of LSMO films on LAO. However, the MR of LSMO film on LAO films at room-temperature is about 5.17%. The thin films are smooth and dense with uniform nanocrystal size grain. These results demonstrate that PACSD is an effective technique for producing high quality LSMO films, which is significant to improve the magnetic properties and the application of automotive sensor.

  19. Strong interfacial magnetic coupling in epitaxial bilayers of LaCoO{sub 3}/LaMnO{sub 3} prepared by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Vila-Fungueiriño, José Manuel; Rivas-Murias, Beatriz, E-mail: beatriz.rivas@usc.es; Rivadulla, Francisco

    2014-02-28

    We report the synthesis of high quality epitaxial bilayers of LaMnO{sub 3}/LaCoO{sub 3} (LCO/LMO) on (001) LaAlO{sub 3}, by spin-coating of a polymeric aqueous solutions. The bilayer shows a very large increase of the magnetization coercive field (≈ 3000%) with respect to the isolated LMO or LCO films. We suggest that the origin of this effect is a strong Mn{sup 4+}–O–Co{sup 2+} exchange interaction at the interface. Our results demonstrate that a simple chemical method is able to produce high quality epitaxial heterostructures in which interfacial effects can modify substantially the properties of the individual layers. - Highlights: • Synthesis of high quality epitaxial bilayers of LaMnO{sub 3}/LaCoO{sub 3} on (001) LaAlO{sub 3} • Polymer assisted deposition method • Interfacial effects can modify substantially the properties of the individual layers.

  20. Surface modeling and chemical solution deposition of SrO(SrTiO{sub 3}){sub n} Ruddlesden-Popper phases

    Energy Technology Data Exchange (ETDEWEB)

    Zschornak, M., E-mail: matthias.zschornak@physik.tu-dresden.de [Institut fuer Ionenstrahlphysik und Materialforschung, FZ Dresden-Rossendorf, D-01314 Dresden (Germany)] [Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany); Gemming, S. [Institut fuer Ionenstrahlphysik und Materialforschung, FZ Dresden-Rossendorf, D-01314 Dresden (Germany); Gutmann, E. [Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany); Weissbach, T. [Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany)] [Institut fuer Theoretische Physik, TU Bergakademie Freiberg, D-09596 Freiberg (Germany); Stoecker, H.; Leisegang, T. [Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany); Riedl, T.; Traenkner, M. [IFW Dresden, PF 270116, D-01171 Dresden (Germany)] [Institut fuer Werkstoffwissenschaft, Technische Universitaet Dresden, D-01062 Dresden (Germany); Gemming, T. [IFW Dresden, PF 270116, D-01171 Dresden (Germany); Meyer, D.C. [Institut fuer Strukturphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany)] [Institut fuer Experimentelle Physik, TU Bergakademie Freiberg, D-09596 Freiberg (Germany)

    2010-08-15

    Strontium titanate (STO) is a preferred substrate material for functional oxide growth, whose surface properties can be adjusted through the presence of Ruddlesden-Popper (RP) phases. Here, density functional theory (DFT) is used to model the (1 0 0) and (0 0 1) surfaces of SrO(SrTiO{sub 3}){sub n} RP phases. Relaxed surface structures, electronic properties and stability relations have been determined. In contrast to pure STO, the near-surface SrO-OSr stacking fault can be employed to control surface roughness by adjusting SrO and TiO{sub 2} surface rumpling, to stabilize SrO termination in an SrO-rich surrounding or to increase the band gap in the case of TiO{sub 2} termination. RP thin films have been epitaxially grown on (0 0 1) STO substrates by chemical solution deposition. In agreement with DFT results, the fraction of particular RP phases n = 1-3 changes with varying heating rate and molar ratio Sr:Ti. This is discussed in terms of bulk formation energy.

  1. Microreactor-Assisted Solution Deposition for Compound Semiconductor Thin Films

    Directory of Open Access Journals (Sweden)

    Chang-Ho Choi

    2014-05-01

    Full Text Available State-of-the-art techniques for the fabrication of compound semiconductors are mostly vacuum-based physical vapor or chemical vapor deposition processes. These vacuum-based techniques typically operate at high temperatures and normally require higher capital costs. Solution-based techniques offer opportunities to fabricate compound semiconductors at lower temperatures and lower capital costs. Among many solution-based deposition processes, chemical bath deposition is an attractive technique for depositing semiconductor films, owing to its low temperature, low cost and large area deposition capability. Chemical bath deposition processes are mainly performed using batch reactors, where all reactants are fed into the reactor simultaneously and products are removed after the processing is finished. Consequently, reaction selectivity is difficult, which can lead to unwanted secondary reactions. Microreactor-assisted solution deposition processes can overcome this limitation by producing short-life molecular intermediates used for heterogeneous thin film synthesis and quenching the reaction prior to homogeneous reactions. In this paper, we present progress in the synthesis and deposition of semiconductor thin films with a focus on CdS using microreactor-assisted solution deposition and provide an overview of its prospect for scale-up.

  2. Tungsten chemical vapor deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Hirano, Kiichi; Takeda, Nobuo.

    1993-07-13

    A tungsten chemical vapor deposition method is described, comprising: a first step of selectively growing a first thin tungsten film of a predetermined thickness in a desired region on the surface of a silicon substrate by reduction of a WF[sub 6] gas introduced into an atmosphere of a predetermined temperature containing said silicon substrate; and a second step of selectively growing a second tungsten film of a predetermined thickness on said first thin tungsten film by reduction of said WF[sub 6] with a silane gas further introduced into said atmosphere, wherein the surface state of said substrate is monitored by a pyrometer and the switching from said first step to said second step is performed when the emissivity of infrared light from the substrate surfaces reaches a predetermined value.

  3. Radiative transfer modeling of surface chemical deposits

    Science.gov (United States)

    Reichardt, Thomas A.; Kulp, Thomas J.

    2016-05-01

    Remote detection of a surface-bound chemical relies on the recognition of a pattern, or "signature," that is distinct from the background. Such signatures are a function of a chemical's fundamental optical properties, but also depend upon its specific morphology. Importantly, the same chemical can exhibit vastly different signatures depending on the size of particles composing the deposit. We present a parameterized model to account for such morphological effects on surface-deposited chemical signatures. This model leverages computational tools developed within the planetary and atmospheric science communities, beginning with T-matrix and ray-tracing approaches for evaluating the scattering and extinction properties of individual particles based on their size and shape, and the complex refractive index of the material itself. These individual-particle properties then serve as input to the Ambartsumian invariant imbedding solution for the reflectance of a particulate surface composed of these particles. The inputs to the model include parameters associated with a functionalized form of the particle size distribution (PSD) as well as parameters associated with the particle packing density and surface roughness. The model is numerically inverted via Sandia's Dakota package, optimizing agreement between modeled and measured reflectance spectra, which we demonstrate on data acquired on five size-selected silica powders over the 4-16 μm wavelength range. Agreements between modeled and measured reflectance spectra are assessed, while the optimized PSDs resulting from the spectral fitting are then compared to PSD data acquired from independent particle size measurements.

  4. Physical-chemical conditions of ore deposition

    Science.gov (United States)

    Barton, P.B.

    1981-01-01

    Ore deposits form under a wide range of physical and chemical conditions, but those precipitating from hot, aqueous fluids-i.e. the hydrothermal deposits-form generally below 700??C and at pressures of only 1 or 2 kbar or less. Natural aqueous fluids in rocks may extract metal and sulfur from a variety of rock types or may acquire them as a residual heritage from a crystallizing silicate magma. Ore-forming hydrothermal fluids never appear as hot springs (except in deep, submarine situations) because they boil, mix with surface waters, and cool, thereby losing their ore-bearing ability before reaching the surface. Mineral systems function as chemical buffers and indicators just as buffers and indicators function in a chemical laboratory. By reading the record written in the buffer/indicator assemblages of minerals one can reconstruct many aspects of the former chemical environment. By studying the record of changing conditions one may deduce information regarding the processes functioning to create the succession of chemical environments and the ore deposits they represent. The example of the OH vein at Creede, Colorado, shows a pH buffered by the K-feldspar + muscovite + quartz assemblage and the covariation of S2 and O2 buffered by the assemblage chlorite + pyrite + quartz. Boiling of the ore fluid led to its oxidation to hematite-bearing assemblages and simultaneously produced an intensely altered, sericitic capping over the vein in response to the condensation of vapors bearing acidic components. The solubility of metals as calculated from experimental and theoretical studies of mineral solubility appears too low by at least one or two powers of ten to explain the mineralization at Creede. In contrast to Creede where the mineral stabilities all point to a relatively consistent chemistry, the Mississippi Valley type deposits present a puzzle of conflicting chemical clues that are impossible to reconcile with any single equilibrium situation. Thus we must

  5. Physical-chemical conditions of ore deposition

    Science.gov (United States)

    Barton, Paul B.

    Ore deposits form under a wide range of physical and chemical conditions, but those precipitating from hot, aqueous fluids-i.e. the hydrothermal deposits-form generally below 700°C and at pressures of only 1 or 2 kbar or less. Natural aqueous fluids in rocks may extract metal and sulfur from a variety of rock types or may acquire them as a residual heritage from a crystallizing silicate magma. Ore-forming hydrothermal fluids never appear as hot springs (except in deep, submarine situations) because they boil, mix with surface waters, and cool, thereby losing their ore-bearing ability before reaching the surface. Mineral systems function as chemical buffers and indicators just as buffers and indicators function in a chemical laboratory. By reading the record written in the buffer/indicator assemblages of minerals one can reconstruct many aspects of the former chemical environment. By studying the record of changing conditions one may deduce information regarding the processes functioning to create the succession of chemical environments and the ore deposits they represent. The example of the OH vein at Creede, Colorado, shows a pH buffered by the K-feldspar + muscovite + quartz assemblage and the covariation of S 2 and O 2 buffered by the assemblage chlorite + pyrite + quartz. Boiling of the ore fluid led to its oxidation to hematite-bearing assemblages and simultaneously produced an intensely altered, sericitic capping over the vein in response to the condensation of vapors bearing acidic components. The solubility of metals as calculated from experimental and theoretical studies of mineral solubility appears too low by at least one or two powers of ten to explain the mineralization at Creede. In contrast to Creede where the mineral stabilities all point to a relatively consistent chemistry, the Mississippi Valley type deposits present a puzzle of conflicting chemical clues that are impossible to reconcile with any single equilibrium situation. Thus we must

  6. Phase Evolution of YBa2Cu3O7-x films by all-chemical solution deposition route for coated conductors

    DEFF Research Database (Denmark)

    Yue, Zhao; Tang, Xiao; Wu, Wei;

    2014-01-01

    In order to understand the all-chemical-solution-deposition (CSD) processes for manufacturing coated conductors, we investigated the phase evolution of YBa2Cu3O7 (YBCO) films deposited by a low-fluorine metal-organic solution deposition (LF-MOD) method on CSD derived Ce0.9La0.1O2/Gd2Zr2O7/Ni......W. It is shown that the phase transition from the pyrolyzed film to fully converted YBCO film in the LF-MOD process is similar to that in typical trifluoroacetates-metal organic deposition (TFA-MOD) processes even though the amount of TFA in the solution is reduced by almost one half compared with typical TFA...... deposited at high sintering temperatures. Based on these results, the optimized growth conditions of YBCO films were established, and a high critical current density (Jc) of about 2 MA/cm2 (77 K, self field) is achieved in a 200 nm thick YBCO film in the architecture made by our all CSD route....

  7. Chemical vapor deposition of mullite coatings

    Science.gov (United States)

    Sarin, Vinod; Mulpuri, Rao

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  8. Chemical-vapor-deposition reactor

    Science.gov (United States)

    Chern, S.

    1979-01-01

    Reactor utilizes multiple stacked trays compactly arranged in paths of horizontally channeled reactant gas streams. Design allows faster and more efficient deposits of film on substrates, and reduces gas and energy consumption. Lack of dead spots that trap reactive gases reduces reactor purge time.

  9. Tunnel conduction in epitaxial bilayers of ferromagnetic LaCoO₃/La₂/₃Sr₁/₃MnO₃ deposited by a chemical solution method.

    Science.gov (United States)

    Lucas, Irene; Vila-Fungueiriño, José Manuel; Jiménez-Cavero, Pilar; Rivas-Murias, Beatriz; Magén, César; Morellón, Luis; Rivadulla, Francisco

    2014-12-10

    We report magnetic and electronic transport measurements across epitaxial bilayers of ferromagnetic insulator LaCoO3 and half-metallic ferromagnet La2/3Sr1/3MnO3 (LCO/LSMO: 3.5 nm/20 nm) fabricated by a chemical solution method. The I-V curves at room temperature and 4K measured with conducting atomic force microscopy (CAFM) on well-defined patterned areas exhibit the typical features of a tunneling process. The curves have been fitted to the Simmons model to determine the height (φ) and width (s) of the insulating LCO barrier. The results yield φ = 0.40 ± 0.05 eV (0.50 ± 0.01 eV) at room temperature (4K) and s = 3 nm, in good agreement with the structural analysis. Our results demonstrate that this chemical method is able to produce epitaxial heterostructures with the quality required for this type of fundamental studies and applications.

  10. Laser Velocimetry of Chemical Vapor Deposition Flows

    Science.gov (United States)

    1993-01-01

    Laser velocimetry (LV) is being used to measure the gas flows in chemical vapor deposition (CVD) reactors. These gas flow measurements can be used to improve industrial processes in semiconductor and optical layer deposition and to validate numerical models. Visible in the center of the picture is the graphite susceptor glowing orange-hot at 600 degrees C. It is inductively heated via the copper cool surrounding the glass reactor.

  11. Rapid adsorption of toxic Pb(II) ions from aqueous solution using multiwall carbon nanotubes synthesized by microwave chemical vapor deposition technique.

    Science.gov (United States)

    Mubarak, Nabisab Mujawar; Sahu, Jaya Narayan; Abdullah, Ezzat Chan; Jayakumar, Natesan Subramanian

    2016-07-01

    Multiwall carbon nanotubes (MWCNTs) were synthesized using a tubular microwave chemical vapor deposition technique, using acetylene and hydrogen as the precursor gases and ferrocene as catalyst. The novel MWCNT samples were tested for their performance in terms of Pb(II) binding. The synthesized MWCNT samples were characterized using Fourier Transform Infrared (FT-IR), Brunauer, Emmett and Teller (BET), Field Emission Scanning Electron Microscopy (FESEM) analysis, and the adsorption of Pb(II) was studied as a function of pH, initial Pb(II) concentration, MWCNT dosage, agitation speed, and adsorption time, and process parameters were optimized. The adsorption data followed both Freundlich and Langmuir isotherms. On the basis of the Langmuir model, Qmax was calculated to be 104.2mg/g for the microwave-synthesized MWCNTs. In order to investigate the dynamic behavior of MWCNTs as an adsorbent, the kinetic data were modeled using pseudo first-order and pseudo second-order equations. Different thermodynamic parameters, viz., ∆H(0), ∆S(0) and ∆G(0) were evaluated and it was found that the adsorption was feasible, spontaneous and endothermic in nature. The statistical analysis revealed that the optimum conditions for the highest removal (99.9%) of Pb(II) are at pH5, MWCNT dosage 0.1g, agitation speed 160r/min and time of 22.5min with the initial concentration of 10mg/L. Our results proved that microwave-synthesized MWCNTs can be used as an effective Pb(II) adsorbent due to their high adsorption capacity as well as the short adsorption time needed to achieve equilibrium.

  12. Structure, optical and electrical properties of Bi{sub 2}VO{sub 5.5} films deposited on ITO/glass substrates by chemical solution method

    Energy Technology Data Exchange (ETDEWEB)

    Guo Ming; Liu Changxin [College of Electronics and Information Engineering, Jingganshan University, ji' an, jiangxi 343009 (China); Shen Yude; Yang Pingxiong, E-mail: pxyang@ee.ecnu.edu.cn [Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, 500 Dongchuan Rd, Shanghai 200241 (China)

    2011-02-01

    Bismuth vanadate (Bi{sub 2}VO{sub 5.5}) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrates by chemical solution method combined with a rapid thermal annealing process. The structure of the films was characterized with X-ray diffraction and atomic force microscopy. The Bi{sub 2}VO{sub 5.5} films annealed at 600 deg. C showed a good match with the ITO coated glass substrates and had a desired perovskite structure with high (00l) preferred orientation. The spherical grains with a homogeneous distribution of high crystallinity and packing density were observed. Optical properties of the Bi{sub 2}VO{sub 5.5} thin films were studied by Raman spectra and the lattice vibration modes of the films were obtained. A low frequency dielectric dispersion was observed in the films. Dielectric constant and loss was about 75 and 0.076 at 10kHz, respectively. The ac conductivity obeyed Jonscher's universal power law, which may be originated a possible hopping mechanism for Bi{sub 2}VO{sub 5.5} thin films. The complex impedance traces revealed material dielectric dispersion nature and the presence of grain effects in the films.

  13. Structure, optical and electrical properties of Bi2VO5.5 films deposited on ITO/glass substrates by chemical solution method

    Science.gov (United States)

    Guo, Ming; Shen, Yude; Liu, Changxin; Yang, Pingxiong

    2011-02-01

    Bismuth vanadate (Bi2VO5.5) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrates by chemical solution method combined with a rapid thermal annealing process. The structure of the films was characterized with X-ray diffraction and atomic force microscopy. The Bi2VO5.5 films annealed at 600 °C showed a good match with the ITO coated glass substrates and had a desired perovskite structure with high (00l) preferred orientation. The spherical grains with a homogeneous distribution of high crystallinity and packing density were observed. Optical properties of the Bi2VO5.5 thin films were studied by Raman spectra and the lattice vibration modes of the films were obtained. A low frequency dielectric dispersion was observed in the films. Dielectric constant and loss was about 75 and 0.076 at 10kHz, respectively. The ac conductivity obeyed Jonscher's universal power law, which may be originated a possible hopping mechanism for Bi2VO5.5 thin films. The complex impedance traces revealed material dielectric dispersion nature and the presence of grain effects in the films.

  14. Chemical vapor deposition coating for micromachines

    Energy Technology Data Exchange (ETDEWEB)

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  15. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  16. Properties of Pb(0.92)La(0.08)Zr(0.52)Ti(0.48)O(3) thin films grown on SrRuO(3) buffered nickel and silicon substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Narayanan, M.; Ma, B.; Tong, S.; Koritala, R.; Balachandran, U. (Energy Systems); ( MSD)

    2012-01-01

    Ferroelectric film-on-foil capacitors are suitable to replace discrete passive components in the quest to develop electronic devices that show superior performance and are smaller in size. The film-on-foil approach is the most practical method to fabricate such components. Films of Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) were deposited on SrRuO{sub 3} (SRO) buffer films over nickel and silicon substrates. High-quality polycrystalline SRO thin-film electrodes were first deposited by chemical solution deposition. A phase pure, dense, uniform microstructure with grain size <100 nm was obtained in films crystallized at 700 C. The room-temperature resistivity of the SRO films crystallized at 700 C was {approx}800-900 {mu}{Omega}-cm. The dielectric properties of sol-gel derived PLZT capacitors on SRO-buffered nickel were evaluated as a function of temperature, bias field, and frequency, and the results were compared to those of the same films on silicon substrates. The comparison demonstrated the integrity of the buffer layer and its compatibility with nickel substrates. Device-quality dielectric properties were measured on PLZT films deposited on SRO-buffered nickel foils and found to be superior to those for PLZT on SRO-buffered silicon and expensive platinized silicon. These results suggest that SRO films can act as an effective barrier layer on nickel substrates suitable for embedded capacitor applications.

  17. Influence of oxygen pressure on critical current density and magnetic flux pinning structures in YBa2Cu3O7-x fabricated by chemical solution deposition

    Institute of Scientific and Technical Information of China (English)

    Ding Fa-Zhu; Gu Hong-Wei; Zhang Teng; Dai Shao-Tao; Xiao Li-Ye

    2011-01-01

    This paper studies the effect of oxygen partial pressure on the fabrication of YBa2Cu3O7-x films on (00/) LaAlO3 substrates by metalorganic deposition using trifluoroacetates (TFA-MOD). As the oxygen partial pressure increases to 1500 Pa, a great increase in the superconducting properties is observed at high magnetic fields parallel to the YBCO c axis. The cross-sectional transmission electron microscope images show that a high density of stacking faults in the size range of 10-15 nm may act as flux pinning centres to enhance the critical current density of the YBCO films

  18. Chemical Vapour Deposition of Large Area Graphene

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget

    structure. Optimization of a process for graphene growth on commercially available copper foil is limited by the number of aluminium oxide particles on the surface of the catalyst. By replacing the copper foil with a thin deposited copper film on a SiO2/Si or c-plane sapphire wafer the particles can......Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform......, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, and (2) optimize the process of growing high quality graphene in terms of carrier mobility, and crystal...

  19. Shallow bath chemical deposition of CdS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Y.S. [Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China); Choubey, R.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi, 835 215 (India); Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China); Yu, W.C. [Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China); Hsu, W.T. [Green Energy and Environmental Research Laboratory, Industrial Technology Research Institute, Hsin-Chu, Taiwan (China); Lan, C.W., E-mail: cwlan@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)

    2011-10-31

    Cadmium sulfide thin film was grown by shallow chemical bath deposition technique. This technique used a highly conducted hot plate to heat the substrate, while using a shallow bath for higher thermal gradients. As a result, large area uniformity could be achieved and the homogeneous nucleation was suppressed. More importantly, the solution used was greatly reduced, which is crucial for cost reduction in practice. The effects of temperature and shaking on the growth kinetics and film properties were investigated. The reaction activation energy was obtained to be 0.84 eV, and was not affected much by shaking indicating that the deposition is essentially reaction controlled. Furthermore, the films deposited at low or high temperature conditions had better photoconductivity.

  20. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

    Science.gov (United States)

    Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

    2016-10-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

  1. Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50(Ti0.80Sn0.20O3 Thin Films Prepared Using Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Venkata Sreenivas Puli

    2015-01-01

    Full Text Available Nanoscale switchable ferroelectric (Ba0.50Sr0.50(Ti0.80Sn0.20O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM technique has been employed to acquire out-of-plane (OPP piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

  2. Electrospray deposition of isolated chemically synthesized magnetic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Agostini, Pierre; Meffre, Anca; Lacroix, Lise-Marie; Ugnati, Damien [Université de Toulouse (France); INSA, UPS, CNRS, Laboratoire de Physique et Chimie des Nano-objets (LPCNO) (France); Ondarçuhu, Thierry [Centre d’Elaboration de Matériaux et d’Etudes Structurales (CEMES-CNRS) (France); Respaud, Marc; Lassagne, Benjamin, E-mail: lassagne@insa-toulouse.fr [Université de Toulouse (France); INSA, UPS, CNRS, Laboratoire de Physique et Chimie des Nano-objets (LPCNO) (France)

    2016-01-15

    The deposition of isolated magnetic nanoparticles onto a substrate was performed using electrohydrodynamic spraying. Two kinds of nanoparticles were sprayed, 11 nm CoFe carbide nanospheres and 10.5 nm Fe nanocubes. By studying carefully the evolution of the sprayed charged droplets and the mechanism of nanoparticle dispersion in them, we could optimize the nanoparticle concentration within the initial nanoparticle solution (i) to reduce the magnetic interaction and therefore prevent agglomeration and (ii) to obtain in a relatively short period (1 h) a deposit of isolated magnetic nanoparticles with a density of up to 400 nanoparticles per µm{sup 2}. These results open great perspectives for magnetic measurements on single objects using advanced magnetometry techniques as long as spintronics applications based on single chemically synthesized magnetic nanoparticles.

  3. Synthesis of mullite coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  4. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; Rath, J.K.; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted, a

  5. Chemical solutions for greywater recycling.

    Science.gov (United States)

    Pidou, Marc; Avery, Lisa; Stephenson, Tom; Jeffrey, Paul; Parsons, Simon A; Liu, Shuming; Memon, Fayyaz A; Jefferson, Bruce

    2008-03-01

    Greywater recycling is now accepted as a sustainable solution to the general increase of the fresh water demand, water shortages and for environment protection. However, the majority of the suggested treatments are biological and such technologies can be affected, especially at small scale, by the variability in strength and flow of the greywater and potential shock loading. This investigation presents the study of alternative processes, coagulation and magnetic ion exchange resin, for the treatment of greywater for reuse. The potential of these processes as well as the influence of parameters such as coagulant or resin dose, pH or contact time were investigated for the treatment of two greywaters of low and high organic strengths. The results obtained revealed that magnetic ion exchange resin and coagulation were suitable treatment solutions for low strength greywater sources. However, they were unable to achieve the required level of treatment for the reuse of medium to high strength greywaters. Consequently, these processes could only be considered as an option for greywater recycling in specific conditions that is to say in case of low organic strength greywater or less stringent standards for reuse.

  6. Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST Thin Film Doped with Ferric Oxide on p-type Si (100 Substrate using Chemical Solution Deposition Method

    Directory of Open Access Journals (Sweden)

    Irzaman

    2011-12-01

    Full Text Available In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST and BST doped by Ferric Oxide Fe2O3 (BFST with doping variations of 5%, 10%, and 15% above type-p Silicon (100 substrate using the chemical solution deposition (CSD method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850OC for the Si (100 substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15 % of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003

  7. Investigation of the amorphous to crystalline phase transition of chemical solution deposited Pb(Zr30Ti70)O3 thin films by soft x-ray absorption and soft x-ray emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schneller, T.; Schneller, T.; Kohlstedt, H.; Petraru, A.; Waser, R.; Guo, J.; Denlinger, J.; Learmonth, T.; Glans, Per-Andres; Smith, K. E.

    2008-08-01

    Chemical solution deposited (CSD) complex oxide thin films attract considerable interest in various emerging fields as for example, fuel cells, ferroelectric random access memories or coated conductors. In the present paper the results of soft-x-ray spectroscopy between 100 eV and 500 eV on the amorphous to crystalline phase transition of ferroelectric PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} (PZT) thin films are presented. Five CSD samples derived from the same wafer coated with a PZT film pyrolyzed at 350 C were heat treated at different temperatures between 400 C and 700 C. At first the sample were morphologically and electrically characterized. Subsequently the soft-x-ray absorption and emission experiments were performed at the undulator beamline 8.0 of the Advanced Light Source of the Lawrence Berkeley National Laboratory. Soft-x-ray absorption spectra were acquired for the Ti L{sub 2,3-}, O K-, and C K-edge thresholds by using simultaneously the total electron yield (TEY) and total fluorescence yield (TFY) detection methods. For two samples, annealed at 400 C and 700 C, respectively, the resonant inelastic soft-x-ray spectroscopy (RIXS) was applied for various excitation energies near the Ti L-, O K-edges. We observed clear evidence of a rutile phase at untypically low temperatures. This rutile phase transforms into the perovskite phase upon increasing annealing temperature. These results are discussed in the framework of current microscopic models of the PZT (111) texture selection.

  8. Adherent apatite coating on titanium substrate using chemical deposition.

    Science.gov (United States)

    Rohanizadeh, R; LeGeros, R Z; Harsono, M; Bendavid, A

    2005-03-15

    Plasma-sprayed "HA" coatings on commercial orthopedic and dental implants consist of mixtures of calcium phosphate phases, predominantly a crystalline calcium phosphate phase, hydroxyapatite (HA) and an amorphous calcium phosphate (ACP) with varying HA/ACP ratios. Alternatives to the plasma-spray method are being explored because of some of its disadvantages. The purpose of this study was to deposit an adherent apatite coating on titanium substrate using a two-step method. First, titanium substrates were immersed in acidic solution of calcium phosphate resulting in the deposition of a monetite (CaHPO4) coating. Second, the monetite crystals were transformed to apatite by hydrolysis in NaOH solution. Composition and morphology of the initial and final coatings were identified using X-ray diffraction (XRD), Scanning Electron Microscopy, and Energy Dispersive Spectroscopy (EDS). The final coating was porous and the apatite crystals were agglomerated and followed the outline of the large monetite crystals. EDS revealed the presence of calcium and phosphorous elements on the titanium substrate after removing the coating using tensile or scratching tests. The average tensile bond of the coating was 5.2 MPa and cohesion failures were observed more frequently than adhesion failures. The coating adhesion measured using scratch test with a 200-microm-radius stylus was 13.1N. Images from the scratch tracks demonstrated that the coating materials were squashed without fracturing inside and/or at the border of the tracks until the failure point of the coating. In conclusion, this study showed the potential of a chemical deposition method for depositing a coating consisting of either monetite or apatite. This method has the advantage of producing a coating with homogenous composition on even implants of complex geometry or porosity. This method involves low temperatures and, therefore, can allow the incorporation of growth factors or biogenic molecules.

  9. Variation in chemical wet deposition with meteorological conditions

    Science.gov (United States)

    Raynor, Gilbert S.; Hayes, Janet V.

    Analysis of hourly sequential precipitation samples collected at Brookhaven National Laboratory over a 4-y period shows systematic relationships between amounts of chemicals deposited in precipitation and meteorological conditions. Samples were taken by an automatic, sequential sampler and measured for pH, conductivity and the concentrations of major ions. Concurrent measurements and observations were made of the synoptic situation, precipitation type and rate, wind speed and direction, and temperature. Deposition per unit area was computed for subsets of the data classified by meteorological and time parameters. Results demonstrate that precipitation amount alone is not an adequate predictor of chemical wet deposition because of the variability of concentration in precipitation which is a complex function of emission rates and atmospheric processes. Results, however, document those conditions under which most material is deposited and those circumstances in which deposition occurs at the greatest rate. When classified by season, hydrogen and sulfate ion deposition are greatest in the summer when precipitation is lowest and least in the winter when precipitation is greatest. Nitrogen in both nitrate and ammonium has a similar but less extreme pattern. By synoptic type, all chemicals are deposited most heavily in warm front precipitation but the fraction of hydrogen and sulfate deposited in cold front and squall line hours is greater than the fraction of precipitation. All chemicals are deposited most heavily in steady rain when examined by precipitation type but thundershowers deposit chemicals of anthropogenic origin in amounts disproportionate to precipitation amounts. Results are also presented from data classified by other parameters.

  10. Thin alumina and silica films by chemical vapor deposition (CVD)

    OpenAIRE

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ceramic coatings. The influence of several process steps on the deposition rate and surface morphology is discussed. The deposition of SiO2 at atmospheric pressure is kinetically limited below 833 K ...

  11. Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

    Science.gov (United States)

    Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

    2004-01-01

    With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

  12. Preparation and characterization of Bi2Sr2CaCu2O8+δ thin films on MgO single crystal substrates by chemical solution deposition

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Kepa, Katarzyna; Hlásek, T.

    2013-01-01

    Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c-axis oriented Bi2Sr2Ca...

  13. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Gellings, P.J.; Vendel, van de D.; Metselaar, H.S.C.; Corbach, van H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical pro

  14. Strain relaxation in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

    2013-12-07

    The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

  15. Chemical vapor deposition synthesis of tunable unsubstituted polythiophene.

    Science.gov (United States)

    Nejati, Siamak; Lau, Kenneth K S

    2011-12-20

    Despite having exceptional electroactive properties, applications of unsubstituted polythiophene (PTh) have been limited due to its insolubility. To overcome this challenge, we have employed oxidative chemical vapor deposition (oCVD) as a unique liquid-free technique to enable the oxidative polymerization of PTh using thiophene as the starting monomer and vanadium oxytrichloride as an effective vaporizable oxidant initiator. Vibrational and phototelectron spectroscopy indicated the formation of unsubstituted polythiophene. Cyclic voltammetry revealed its electrochromic behavior in solution. Significantly, polymer conjugation length and electrical conductivity can be tuned by controlling oCVD process variables. Polymerization is found to be adsorption-limited, so by providing sufficient monomer and limiting the amount of initiator at the growth surface, PTh is believed to be formed through α-α thiophene linkages.

  16. Plasma-Enhanced Chemical Vapor Deposition as a Method for the Deposition of Peptide Nanotubes

    Science.gov (United States)

    2013-09-17

    peptide nanotubes, plasma-enhanced chemical vapor deposition, nano assembly 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18...Using physical vapor deposition ( PVD ) well-ordered assemblies of peptide nanotubes (PNTs) composed of dipeptide subunits are obtained on various...for the deposition of thin films (Figure 1b). A. B. Figure 1. (a) Illustration of physical vapor deposition ( PVD ) process of diphenylalanine

  17. Thin alumina and silica films by chemical vapor deposition (CVD)

    NARCIS (Netherlands)

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ce

  18. Electroless Deposition of W-doped Ag Dendrites from HF Solution

    Institute of Scientific and Technical Information of China (English)

    YE Wei-Chun; MA Chuan-Li; CHANG Yan-Long; WANG Chun-Ming

    2008-01-01

    A simple method was developed for the preparation of W-doped Ag dendrites by using electroless deposition from hydrofluoride solution. The samples characterized by XPS, XRD, SEM and TEM techniques, show that the growth of silver is leading and can not be changed essentially by tungstate ions in the Ag-W binary system. A doping mode of W element was proposed, i.e., the doping of W may occur during silver deposition through chemi-sorption-chemical bonding of oxygen atoms of tungstate dimer with silver. Cyclic voltammetry was employed to determine the chemical bonding energy between silver and oxygen.

  19. Discrete formulation of mixed finite element methods for vapor deposition chemical reaction equations

    Institute of Scientific and Technical Information of China (English)

    LUO Zhen-dong; ZHOU Yan-jie; ZHU Jiang

    2007-01-01

    The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical modes by the following governing nonlinear partial differential equations containing velocity vector,temperature field,pressure field,and gas mass field.The mixed finite element(MFE)method is employed to study the system of equations for the vapor deposition chemical reaction processes.The semidiscrete and fully discrete MFE formulations are derived.And the existence and convergence(error estimate)of the semidiscrete and fully discrete MFE solutions are deposition chemical reaction processes,the numerical solutions of the velocity vector,the temperature field,the pressure field,and the gas mass field can be found out simultaneonsly.Thus,these researches are not only of important theoretical means,but also of extremely extensive applied vistas.

  20. Chemical Bath Deposition of Nickel Sulphide (Ni4S3 Thin Films

    Directory of Open Access Journals (Sweden)

    Darren TEO

    2010-12-01

    Full Text Available Thin films of nickel sulphide were deposited from aqueous baths on indium tin oxide glass substrate. The chemical bath contained nickel sulphate, sodium thiosulfate and triethanolamine solutions. The aim of the present study was to analyze the different experimental conditions to prepare Ni4S3 thin films using chemical bath deposition technique. The structural, morphological and optical properties of nickel sulphide thin films were obtained by X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer will be presented. The properties of the films varied with the variation in the deposition parameters. The films deposited at longer deposition time using lower concentration in more acidic medium showed improved crystallinity, good uniformity and better adhesion to the substrate. Films showed band gap of 0.35 eV and exhibited p-type semiconductor behaviour.

  1. Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

    Science.gov (United States)

    Haven, Victor E.

    1999-01-01

    Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

  2. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

  3. Tandem solar cells deposited using hot-wire chemical vapor deposition

    NARCIS (Netherlands)

    Veen, M.K. van

    2003-01-01

    In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique ar

  4. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  5. Epitaxial solution deposition of YBa2Cu3O7-6 coated conductors.

    Energy Technology Data Exchange (ETDEWEB)

    Overmyer, Donald L.; Clem, Paul Gilbert; Siegal, Michael P.; Holesinger, Terry A. (Los Alamos National Laboratory, Los Alamos, NM); Voigt, James A.; Richardson, Jacob J.; Dawley, Jeffrey Todd

    2004-11-01

    A variety of solution deposition routes have been reported for processing complex perovskite-based materials such as ferroelectric oxides and conductive electrode oxides, due to ease of incorporating multiple elements, control of chemical stoichiometry, and feasibility for large area deposition. Here, we report an extension of these methods toward long length, epitaxial film solution deposition routes to enable biaxially oriented YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO)-coated conductors for superconducting transmission wires. Recent results are presented detailing an all-solution deposition approach to YBCO-coated conductors with critical current densities J{sub c} (77 K) > 1 MA/cm{sup 2} on rolling-assisted, biaxially textured, (200)-oriented Ni-W alloy tapes. Solution-deposition methods such as this approach and those of other research groups appear to have promise to compete with vapor phase methods for superconductor electrical properties, with potential advantages for large area deposition and low cost/kA {center_dot} m of wire.

  6. Clean diffusion coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Warnes, B.M.; Punola, D.C. [Howmet Thermatech Coatings, Whitehall, MI (United States)

    1997-10-01

    An experimental program was undertaken to identify diffusion coating impurities introduced by standard aluminizing processes and to evaluate the impact of those impurities on oxidation resistance of the resultant Pt aluminide coating. IN-738 tabs and foils were platinum-electroplated, and then aluminized using three different processes: high-activity pack cementation, high-activity CVD and low-activity CVD. The results suggest that aluminizing processes which involve aluminum bearing alloys in the coating retort with H{sub 2} or H{sub 2}/HCl gas at high temperature can contaminate the diffusion coating during deposition. CVD low-activity aluminizing (coating gas generated at low temperature outside the coating chamber from 99.999% Al) did not introduce any coating impurities. In addition, the data indicates that harmful impurities from the IN-738 substrate (sulfur, boron and tungsten) and the electroplating process (phosphorus) were removed from the coating during deposition. The CVD low-activity Pt aluminide coating was the `cleanest` in the study, and it exhibited the best high-temperature oxidation resistance of the coatings considered. It can be concluded that trace elements in diffusion coatings from the superalloy substrate and/or the aluminizing process can adversely effect the oxidation resistance of those coatings, and that CVD low-activity aluminizing yields cleaner coatings than other commercially available aluminizing techniques. (orig.) 10 refs.

  7. Ultrasonic filtration of industrial chemical solutions

    Science.gov (United States)

    Cosma, T.

    1974-01-01

    The practical results obtained as a result of filtering industrial chemical solutions under continuous flow conditions with the aid of an ultrasonic filter are presented. The main part of the assembly consists of an ultrasonic generator with an output power of about 400 W and the filtration assembly, in which there is a magnetostrictive amplifier constructed for 20.5 kHz. In addition to ensuring a continuous flow of filtered solution, ultrasonic filters can be replaced or cleaned at intervals of time that are 8-10 times greater than in the case of mechanical filters. They yield considerably better results as far as the size of the filtered particles is concerned. The parameters on which filtration quality depends are also presented.

  8. CdS films deposited by chemical bath under rotation

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

    2010-08-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  9. Atomic Force Microscopy Studies on The Surface Morphologies of Chemical Bath Deposited Cus Thin Films

    Directory of Open Access Journals (Sweden)

    Ho Soonmin

    2016-06-01

    Full Text Available In this work, copper sulphide thin films were deposited onto microscope glass slide by chemical bath deposition technique. The tartaric acid was served as complexing agent to chelate with Cu2+ to obtain complex solution. The influence of pH value on the surface morphologies of the films has been particularly investigated using the atomic force microscopy technique. The atomic force microscopy results indicate that the CuS films deposited at pH 1 were uniform, compact and pinhole free. However, the incomplete surface coverage observed for the films prepared at high pH (pH 2 and 2.5 values.

  10. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  11. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  12. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  13. Finding a solution to internal diesel injector deposits

    Energy Technology Data Exchange (ETDEWEB)

    Barbour, Robert; Quigley, Robert; Panesar, Avtar; Payne, James [Lubrizol Limited, Derby (United Kingdom); Arters, David; Bush, Jim; Stevens, Andrew [Lubrizol Corporation, Wickliffe, OH (United States)

    2013-06-01

    Internal diesel injector deposits (IDIDs) have caused widespread problems in the automotive industry since around 2005. Modem injectors that have been precisely engineered to operate highly controlled injection strategies are experiencing problems in the field due to deposits that have formed on their critical moving parts, such as the needle and control valve. Problems range from rough idling to a failure to start, when the moving parts become stuck. Early studies showed that the composition of these deposits is variable. In some cases the deposit contained noticeable amounts of sodium carboxylate; these are now generally referred to as 'sodium soaps'. In other incidences the dominant chemical functionality observed was an amide group, and hence these deposits are referred to as 'amide lacquers'. A combination of both types has been observed in many cases and other metals, like calcium, have also been detected. Further studies have shown that the sodium soap type can be formed from specific types of corrosion inhibitors. The source of the amide lacquers is less certain, but there are indications that they originate from specific fuel additives that contain critical levels of low molecular weight species. This paper broadly explores this area of high interest. It will report results on the analysis of deposits and the conditions needed to reproduce both types of IDID in bench engine testing. It will also investigate the types of contaminants that are likely to form IDIDs and explore difference in chemical structure that can lead to pro-fouling, non-fouling and anti-fouling behaviour. It will then show that a deposit control additive, specifically designed to control nozzle tip deposits in modem direct injection diesels, is equally effective in controlling IDIDs; both in terms of prevention and removal. Since IDIDS are formed from multiple sources, some of which are difficult to control in today' s market, the use of a broadly acting fuel

  14. Solution Based Deposition of Polyimide Ablators for NIF Capsules

    Energy Technology Data Exchange (ETDEWEB)

    Cook, R

    2002-07-11

    Between June 1997 and March 2002 Luxel Corporation was contracted to explore the possibility of preparing NIF scale capsules with polyimide ablators using solution-based techniques. This work offered a potential alternative to a vapor deposition approach talking place at LLNL. The motivation for pursuing the solution-based approach was primarily two-fold. First, it was expected that much higher strength capsules (relative to vapor deposition) could be prepared since the solution precursors were known to produce high strength films. Second, in applying the ablator as a fluid it was expected that surface tension effects would lead to very smooth surfaces. These potential advantages were offset by expected difficulties, primary among them that the capsules would need to be levitated in some fashion (for example acoustically) during coating and processing, and that application of the coating uniformly to thicknesses of 150 pm on levitated capsules would be difficult. Because of the expected problems with the coupling of levitation and coating, most of the initial effort was to develop coating and processing techniques on stalk-mounted capsules. The program had some success. Using atomizer spray techniques in which application of {approx}5 {micro}m fluid coatings were alternated with heating to remove solvent resulted in up to 70 {micro}m thick coatings that were reasonably smooth at short wavelengths, and showed only about a 1 {micro}m thickness variation over long wavelengths. More controlled deposition with an inkjet devise was also developed. However difficult technical problems remained, and these problems coupled with the relative success of the vapor deposition approach led to the termination of the solution-based work in 2002. What follows is a compilation of the progress reports submitted by Luxel for this work which spanned a number of separate contracts. The reports are arranged chronologically, the last report in the collection has a modest summary of what

  15. A novel induction heater for chemical vapor deposition

    Science.gov (United States)

    Ong, C. W.; Wong, H. K.; Sin, K. S.; Yip, S. T.; Chik, K. P.

    1989-06-01

    We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.

  16. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  17. Effective conductivity of chemically deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Robles, M. [Universidad Autonoma del Estado de Morelos (UAEM), Cuernavaca (Mexico). Fac. de Ciencias; Tagueena-Martinez, J. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar; Del Rio, J.A. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar

    1997-01-30

    Chemically deposited thin films have multiple applications. However, as a result of their complex structure, their physical properties are very difficult to predict. In this paper, we use an effective medium approach to model these heterogeneous systems. We extend Thorpe`s formula for the effective electrical conductivity of elliptical holes randomly distributed in a matrix to a system composed of conducting ellipses in a conducting matrix. This extension is used to calculate the effective electrical conductivity of polycrystalline chemically deposited ZnO thin films. We compare experimental results obtained by two different deposition methods: spray pyrolysis and successive ion layer adsorption and reaction (SILAR) reported here. We select the elliptical geometric parameters from microstructural data. Good agreement between the experimental measurements and our calculation is obtained. In addition, we present a new proof of the reciprocity theorem used to derive the theoretical relation. (orig.)

  18. Nanocrystalline Diamond Films Deposited by Electron Assisted Hot Filament Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.

  19. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  20. Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

    Science.gov (United States)

    Kim, Chan-Soo; Youn, Woong-Kyu; Lee, Dong-Kwon; Seol, Kwang-Soo; Hwang, Nong-Moon

    2009-07-01

    The nanocrystalline alpha silicon nitride (α-Si 3N 4) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH 4 and NH 3. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si 3N 4 nanoparticles increased, but the deposition rate decreased.

  1. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  2. The atmospheric chemical vapour deposition of coatings on glass

    CERN Document Server

    Sanderson, K D

    1996-01-01

    The deposition of thin films of indium oxide, tin doped indium oxide (ITO) and titanium nitride for solar control applications have been investigated by Atmospheric Chemical Vapour Deposition (APCVD). Experimental details of the deposition system and the techniques used to characterise the films are presented. Results from investigations into the deposition parameters, the film microstructure and film material properties are discussed. A range of precursors were investigated for the deposition of indium oxide. The effect of pro-mixing the vaporised precursor with an oxidant source and the deposition temperature has been studied. Polycrystalline In sub 2 O sub 3 films with a resistivity of 1.1 - 3x10 sup - sup 3 OMEGA cm were obtained with ln(thd) sub 3 , oxygen and nitrogen. The growth of ITO films from ln(thd) sub 3 , oxygen and a range of tin dopants is also presented. The effect of the dopant precursor, the doping concentration, deposition temperature and the effect of additives on film growth and microstr...

  3. Structural and Optical Study of Chemical Bath Deposited Nano-Structured CdS Thin Films

    Science.gov (United States)

    Kumar, Suresh; Sharma, Dheeraj; Sharma, Pankaj; Sharma, Vineet; Barman, P. B.; Katyal, S. C.

    2011-12-01

    CdS is commonly used as window layer in polycrystalline solar cells. The paper presents a structural and optical study of CdS nano-structured thin films. High quality CdS thin films are grown on commercial glass by means of chemical bath deposition. It involves an alkaline solution of cadmium salt, a complexant, a chalcogen source and a non-ionic surfactant. The films have been prepared under various process parameters. The chemically deposited films are annealed to estimate its effect on the structural and optical properties of films. These films (as -deposited and annealed) have been characterized by means of XRD, SEM and UV-Visible spectrophotometer. XRD of films show the nano-crystalline nature. The energy gap of films is found to be of direct in nature.

  4. Synthesis and characterization of chemically deposited CdS thin films without toxic precursors.

    Science.gov (United States)

    Fernández-Pérez, A.; Sandoval-Paz, M. G.

    2016-05-01

    Al doped and undoped CdS thin films (CdS:Al) were deposited on glass, copper and bronze substrates by chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. The structural and optical properties of the CdS films were determined by X-ray diffraction (XRD), scanning electron microscope (SEM), and simultaneous transmission- reflection spectroscopy. It was found that the properties of the films depend on the amount of Al in the growth solutions and deposition time. The increase in Al content in the reaction solution led to a smaller crystallite size and higher energy band gap that varies in the range 2.42 eV - 2.59 eV depending on the Al content.

  5. Combustion chemical vapor deposited coatings for thermal barrier coating systems

    Energy Technology Data Exchange (ETDEWEB)

    Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering

    1995-12-31

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

  6. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source....... This configuration enables a gentle treatment of sensitive materials like low-density polyethylene foils and biodegradable materials. SiOx coatings deposited in the novel setup were compared with other state of the art plasma coatings and were found to possess equally good or better barrier properties. The barrier...... effect of single-layer coatings deposited under different reaction conditions was studied. The coating thickness and the carbon content in the coatings were found to be the critical parameters for the barrier property. The novel barrier coating was applied on different polymeric materials...

  7. Metallization on FDM Parts Using the Chemical Deposition Technique

    Directory of Open Access Journals (Sweden)

    Azhar Equbal

    2014-08-01

    Full Text Available Metallization of ABS (acrylonitrile-butadiene-styrene parts has been studied on flat part surfaces. These parts are fabricated on an FDM (fused deposition modeling machine using the layer-wise deposition principle using ABS as a part material. Electroless copper deposition on ABS parts was performed using two different surface preparation processes, namely ABS parts prepared using chromic acid for etching and ABS parts prepared using a solution mixture of sulphuric acid and hydrogen peroxide (H2SO4/H2O2 for etching. After surface preparations using these routes, copper (Cu is deposited electrolessly using four different acidic baths. The acidic baths used are 5 wt% CuSO4 (copper sulfate with 15 wt% of individual acids, namely HF (hydrofluoric acid, H2SO4 (sulphuric acid, H3PO4 (phosphoric acid and CH3COOH (acetic acid. Cu deposition under different acidic baths used for both the routes is presented and compared based on their electrical performance, scanning electron microscopy (SEM and energy dispersive X-ray spectrometry (EDS. The result shows that chromic acid etched samples show better electrical performance and Cu deposition in comparison to samples etched via H2SO4/H2O2.

  8. Optical and structural properties of chemically deposited CdS thin films on polyethylene naphthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Concepcion, Casilla 160-C, Concepcion (Chile); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)

    2011-11-30

    CdS thin films were deposited on polyethylene naphthalate substrates by means of the chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. Three sets of CdS films were grown in precursor solutions with different contents of Cd and thiourea maintaining constant the concentration ratios [Cd]/[thiourea] and [Cd]/[sodium citrate] at 0.2 and 0.1 M/M, respectively. The concentrations of cadmium in the reaction solutions were 0.01, 7.5 Multiplication-Sign 10{sup -3} and 6.8 Multiplication-Sign 10{sup -3} M, respectively. The three sets of CdS films were homogeneous, hard, specularly reflecting, yellowish and adhered very well to the plastic substrates, quite similar to those deposited on glass substrates. The structural and optical properties of the CdS films were determined from X-ray diffraction, optical transmission and reflection spectroscopy and atomic force microscopy measurements. We found that the properties of the films depend on both the amount of Cd in the growth solutions and on the deposition time. The increasing of Cd concentration in the reaction solution yield to thicker CdS films with smaller grain size, shorter lattice constant, and higher energy band gap. The energy band gap of the CdS films varied in the range 2.42-2.54 eV depending on the precursor solution. The properties of the films were analyzed in terms of the growth mechanisms during the chemical deposition of CdS layers.

  9. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  10. Self-organization and nanostructure formation in chemical vapor deposition

    Science.gov (United States)

    Walgraef, Daniel

    2013-10-01

    When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monatomic layers, such models describe the evolution of atomic coverage due to the combined effect of reaction terms representing adsorption-desorption and chemical processes and nonlinear diffusion terms that are of the Cahn-Hilliard type. This combination may lead, below a critical temperature, to the instability of uniform deposited layers. This instability triggers the formation of nanostructures corresponding to regular spatial variations of substrate coverage. Patterns wavelengths and symmetries are selected by dynamical variables and not by variational arguments. According to the balance between reaction- and diffusion-induced nonlinearities, a succession of nanostructures including hexagonal arrays of dots, stripes, and localized structures of various types may be obtained. These structures may initiate different growth mechanisms, including Volmer-Weber and Frank-Van der Merwe types of growth. The relevance of this approach to the study of deposited layers of different species is discussed.

  11. Chemical vapor deposition coating of fibers using microwave application

    Science.gov (United States)

    Barmatz, Martin B. (Inventor); Hoover, Gordon (Inventor); Jackson, Henry W. (Inventor)

    2000-01-01

    Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM0N0 mode, where O is an integer, and produces a field that depends substantially only on radius. The fibers are observed to determine their heating, and their position can be adjusted. Once the fibers are uniformly heated, a CVD reagent is added to process the fibers.

  12. Research on chemical vapor deposition processes for advanced ceramic coatings

    Science.gov (United States)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  13. High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases,the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good,and the underlying SiGe/Si heterointerface is sharply defined.

  14. Solution processed deposition of electron transport layers on perovskite crystal surface-A modeling based study

    Science.gov (United States)

    Mortuza, S. M.; Taufique, M. F. N.; Banerjee, Soumik

    2017-02-01

    The power conversion efficiency (PCE) of planar perovskite solar cells (PSCs) has reached up to ∼20%. However, structural and chemicals defects that lead to hysteresis in the perovskite based thin film pose challenges. Recent work has shown that thin films of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) deposited on the photo absorption layer, using solution processing techniques, minimize surface pin holes and defects thereby increasing the PCE. We developed and employed a multiscale model based on molecular dynamics (MD) and kinetic Monte Carlo (kMC) to establish a relationship between deposition rate and surface coverage on perovskite surface. The MD simulations of PCBMs dispersed in chlorobenzene, sandwiched between (110) perovskite substrates, indicate that PCBMs are deposited through anchoring of the oxygen atom of carbonyl group to the exposed lead (Pb) atom of (110) perovskite surface. Based on rates of distinct deposition events calculated from MD, kMC simulations were run to determine surface coverage at much larger time and length scales than accessible by MD alone. Based on the model, a generic relationship is established between deposition rate of PCBMs and surface coverage on perovskite crystal. The study also provides detailed insights into the morphology of the deposited film.

  15. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    Science.gov (United States)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  16. Characterization of nanocarbon deposited on insulator substrate by alcohol chemical vapor deposition

    Science.gov (United States)

    Tsujimoto, Marina; Murata, Hidenobu; Tachibana, Masaru

    2016-10-01

    Single-layer-graphene-like nanocarbon materials were directly deposited on c-plane sapphire substrates by thermal chemical vapor deposition with ethanol as a carbon source. Scanning electron microscopy (SEM) images show that the deposited materials have sheetlike grains of around 100 nm diameter. Most of them have “hills” with 32 nm diameter on the grains. According to atomic force microscopy (AFM) observation, the height of the sheetlike grains is below 1 nm, which is comparable to that of single-layer graphene, while the hills have a height of several nm. Raman spectra show that the material is similar to graphitic nanocarbon, which has a strong D band. This result implies that there are a number of defects in the nanocarbon materials.

  17. Effect of thermal annealing on the properties of cadmium sulfide deposited via chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Faisal R., E-mail: ahmad@ge.com; Yakimov, Aharon; Davis, Robert J.; Her, Jae-Hyuk; Cournoyer, James R.; Ayensu, Nana Menya

    2013-05-01

    This study elucidates how post-deposition annealing in air of CdS thin films deposited via chemical bath deposition, influences the defects and impurities in the films, which in turn affect the electrical conductivity and optical transparency of the films. The electrical properties of the annealed CdS films were characterized using a van der Pauw Hall effect measurement method. Using low-temperature photoluminescence measurements, a variety of sub-bandgap energy levels were observed and identified that are believed to play a critical role in impacting the concentration of carriers in the films. In addition, we studied the optical transmission and crystalline quality of the films as a function of the different annealing conditions. - Highlights: ► Annealing CdS affects its bandgap, structure and electrical conductivity. ► Low temperature photoluminescence spectra show how annealing affects CdS. ► Carrier concentration affected sulfur vacancies and cadmium interstitials.

  18. 21 CFR 864.1850 - Dye and chemical solution stains.

    Science.gov (United States)

    2010-04-01

    ... synthetic or natural dyes or nondye chemicals in solutions used in staining cells and tissues for diagnostic... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Dye and chemical solution stains. 864.1850 Section... (CONTINUED) MEDICAL DEVICES HEMATOLOGY AND PATHOLOGY DEVICES Biological Stains § 864.1850 Dye and...

  19. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  20. Processes and environmental significance of the subglacial chemical deposits in Tianshan Mountains

    Institute of Scientific and Technical Information of China (English)

    LIU; Gengnian; LUO; Risheng; CAO; Jun

    2005-01-01

    On the bedrock surface of Glacier No.1 in the headwater of Urumqi River, Tianshan Mts., well layered and crystallized subglacial calcite precipitations were discovered. Based on observations and analysis of the surface form, sedimentary texture and structure, and chemical composition of the deposits, clues about the subglacial processes and environment are deduced. The radial-growth crustation texture of the deposits, which builds up in the saturated CaCO3 solution, proves the existence of pressure melting water and water films under Glacier No.1; and their rhythmic beddings, dissolved planes and unconformable contacts show that the water films responsible for the formation of these structures were in a wide range of spatial as well as temporal variations. Though formed under continental glacier in non-limestone area, the deposits are quite similar to those formed under temperate glaciers in limestone areas, a fact that shows a similar process of chemical precipitation between the two. Hence the enrichment of calcium in the subglacial melting water and the process of precipitation have actually little to do with the bedrock lithology and the glacier types. The cemented detritus in the deposits are rich in Fe and Al while depleted in K, Na and Si; also the included clay mineral consists mainly of illite, which reveals some weak chemical weathering under the continental glacier. The subglacial CaCO3 precipitates when plenty of Ca++ melt into the subglacial melting water on a comparatively enclosed ice-bedrock interface under a high CO2 partial pressure, the forming of subglacial chemical deposits therefore offers unequivocal evidence for the ongoing of subglacial chemical reactions.

  1. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  2. Cadmium Sulfide Thin Films Deposited onto MWCNT/Polysulfone Substrates by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    M. Moreno

    2016-01-01

    Full Text Available Cadmium sulfide (CdS thin films were deposited by chemical bath deposition (CBD onto polymeric composites with electric field-aligned multiwall carbon nanotubes (MWCNTs. MWCNT/polysulfone composites were prepared by dispersing low concentrations of MWCNTs within dissolved polysulfone (PSF. An alternating current electric field was “in situ” applied to align the MWCNTs within the dissolved polymer along the field direction until the solvent was evaporated. 80 μm thick solid MWCNT/PSF composites with an electrical conductivity 13 orders of magnitude higher than the conductivity of the neat PSF were obtained. The MWCNT/PSF composites were subsequently used as flexible substrates for the deposition of CdS thin films by CBD. Transparent and adherent CdS thin films with an average thickness of 475 nm were obtained. The values of the energy band gap, average grain size, rms roughness, crystalline structure, and preferential orientation of the CdS films deposited onto the polymeric substrate were very similar to the corresponding values of the CdS deposited onto glass (conventional substrate. These results show that the MWCNT/PSF composites with electric field-tailored MWCNTs represent a suitable option to be used as flexible conducting substrate for CdS thin films, which represents an important step towards the developing of flexible systems for photovoltaic applications.

  3. Synthesis of Aligned Carbon Nanotubes by Thermal Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Gang; ZHOU Ming; MA Weiwei; CAI Lan

    2009-01-01

    Single crystal silicon was found to be very beneficial to the growth of aligned carbon nanotubes by chemical vapor deposition with C2H2 as carbon source. A thin film of Ni served as catalyst was deposited on the Si substrate by the K575X Peltier Cooled High Resolution Sputter Coater before growth. The growth properties of carbon nanotubes were studied as a function of the Ni catalyst layer thickness. The diameter, growth rate and areal density of the carbon nanotubes were controlled by the initial thickness of the catalyst layer. Steric hindrance between nanotubes forces them to grow in well-aligned manner at an initial stage of growth. Transmission electron microscope analysis revealed that nanotubes grew by a tip growth mechanism.

  4. Electronic structure and chemical reaction of Ca deposition on regioregular poly(3-hexylthiophene) surfaces

    Institute of Scientific and Technical Information of China (English)

    ZHAO Wei; GUO YuXian; FENG XueFei; ZHANG Liang; ZHANG WenHua; ZHU JunFa

    2009-01-01

    Conjugated polymer, regioregular poly(3-hexylthiophene) (rr-P3HT), films were prepared by spin-coating the rr-P3HT chloroform solution onto clean silicon wafer surfaces. The chemical re-action and electronic structure of Ca deposition on rr-P3HT surfaces were in situ investigated by synchrotron radiation photoemission spectroscopy (SRPES) and X-ray photoemission spectros-copy (XPS). Upon Ca deposition, Ca-induced band bending of rr-P3HT is observed. In addition, Ca atoms preferentially react with S atoms of rr-P3HT. No obvious reaction between Ca and C atoms can be found. Through the investigation of the evolution of valence band spectra and secondary electron cut-off of rr-P3HT during the process of Ca deposition, an energy level alignment diagram at the Ca/rr-P3HT interface is derived.

  5. Chemical-milling solution for invar alloy

    Science.gov (United States)

    Batiuk, W.

    1980-01-01

    Excellent surface finishes and tolerances are achieved using two formulations. Solution A gives finish of 3.17 micrometers after milling at 57 to 63 deg C. Constituents of A are: Hydrofluoric acid (70%), 5,8 oz/gal; nitric acid (40-42) degrees Baume), 40 oz/gal. Alternative solution gives 2.16 micrometer finish, and differs from A by addition of 7% phosphoric acid. Formulations eliminate channeling at root fillets, dishing, island formation, and overhangs.

  6. Chemical solution seed layer for rabits tapes

    Science.gov (United States)

    Goyal, Amit; Paranthaman, Mariappan; Wee, Sung-Hun

    2014-06-10

    A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

  7. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  8. Handbook of chemical vapor deposition principles, technology and applications

    CERN Document Server

    Pierson, Hugh O

    1999-01-01

    Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

  9. Recovery of metal values from spent lithium-ion batteries with chemical deposition and solvent extraction

    Science.gov (United States)

    Nan, Junmin; Han, Dongmei; Zuo, Xiaoxi

    This paper describes a new recycling process of metal values from spent lithium-ion batteries (LIBs). After the dismantling of the spent batteries steel crusts, the leaching of battery internal substances with alkaline solution and the dissolving of the residues with H 2SO 4 solution were carried out. Then mass cobalt was chemically deposited as oxalate, and Acorga M5640 and Cyanex272 extracted the small quantities of copper and cobalt, respectively. Lithium was recovered as deposition of lithium carbonate. It is shown that about 90% cobalt was deposited as oxalate with less than 0.5% impurities, and Acorga M5640 and Cyanex272 were efficient and selective for the extraction of copper and cobalt in sulfate solution. Over 98% of the copper and 97% of the cobalt was recovered in the given process. In addition, the waste solution was treated innocuously, and LiCoO 2 positive electrode material with good electrochemical performance was also synthesized by using the recovered compounds of cobalt and lithium as precursors. The process is feasible for the recycling of spent LIBs in scale-up.

  10. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  11. Initiated chemical vapor deposition of antimicrobial polymer coatings.

    Science.gov (United States)

    Martin, T P; Kooi, S E; Chang, S H; Sedransk, K L; Gleason, K K

    2007-02-01

    The vapor phase deposition of polymeric antimicrobial coatings is reported. Initiated chemical vapor deposition (iCVD), a solventless low-temperature process, is used to form thin films of polymers on fragile substrates. For this work, finished nylon fabric is coated by iCVD with no affect on the color or feel of the fabric. Infrared characterization confirms the polymer structure. Coatings of poly(dimethylaminomethyl styrene) of up to 540 microg/cm2 were deposited on the fabric. The antimicrobial properties were tested using standard method ASTM E2149-01. A coating of 40 microg/cm2 of fabric was found to be very effective against gram-negative Escherichia coli, with over a 99.99%, or 4 log, kill in just 2 min continuing to over a 99.9999%, or 6 log, reduction in viable bacteria in 60 min. A coating of 120 microg/cm2 was most effective against the gram-positive Bacillus subtilis. Further tests confirmed that the iCVD polymer did not leach off the fabric.

  12. Deposition from dopamine solutions at Ge substrates: an in situ ATR-FTIR study.

    Science.gov (United States)

    Müller, Martin; Kessler, Bernd

    2011-10-18

    Deposition from dopamine (DA) solutions at germanium (Ge) model substrates was monitored under stationary conditions using surface sensitive in situ attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. ATR-FTIR spectra of the interfacial organic layer formed upon contact of TRIS buffered aqueous DA solutions to a Ge internal reflection element (IRE) showed conveniently strong diagnostic IR absorption bands, which were increasing with deposition time up to at least 6 h. Comparison of IR spectra of unreacted pristine DA, surface reacted, and bulk reacted material confirmed chemical reactions of DA to a polymerizate according to the literature. The found IR bands could be assigned to aromatic as well as C-O single bond moieties. The kinetic courses of the diagnostic band integrals showed an initial increase and saturation of the deposition after around 300 min, which could be empirically represented by an exponential damping function revealing a rather small kinetic constant. Highest deposition levels were found at pH = 8.5 (TRIS buffer or NaOH) in contrast to pH = 6.2, where no deposition occurred. Minor deposition was found in the presence of salt or at ZnSe instead of Ge due to the absence of reactive hydroxyl groups. The concentration dependence of DA deposition showed an initial increase and a saturation beginning at around 0.4 mg/mL (0.0022 M), where around 50 nm thick films featuring granular surface morphologies are formed. The adsorbed species are suggested to be smaller bulk reacted DA polymerizate particles with reactive end groups. Rinsing the formed films by pure TRIS buffer resulted in a time dependent release of deposited organic material by ≈23%, which could be represented by an exponential decay function. A saturation of the release after around 100 min and a larger kinetic constant compared to deposition could be determined. The released material is suggested to be larger aggregated bulk reacted DA polymerizate particles

  13. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  14. Magnetic and transport properties of chemical solution deposited (100)-textured La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and La{sub 0.7}Ca{sub 0.3}MnO{sub 3} nanocrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kartopu, Giray [Institute for Materials and Surface Technology, University of Applied Sciences Kiel, Grenzstrasse 3, 24149 Kiel (Germany); Yalcin, Orhan [Department of Physics, Faculty of Science, Nigde University, 51240 Nigde (Turkey); Serdar Demiray, A, E-mail: o.yalcin@nigde.edu.t, E-mail: orhanyalcin@gmail.co [Department of Physics, Gebze Institute of Technology, 41400 Gebze, Kocaeli (Turkey)

    2011-01-15

    A study of the magnetic and electrical properties of (100)-oriented La{sub 0.7}(Sr,Ca){sub 0.3}MnO{sub 3} thin films prepared by an optimized chemical solution deposition process on a (100) SrTiO{sub 3} single-crystal substrate is reported in this paper. The films were studied by high-resolution scanning electron microscopy, x-ray diffraction, vibrating sample magnetometer, ferromagnetic resonance and four-point-probe electrical measurements. A characteristic nanocrystalline texture with {approx}15 nm crystallites is observed in both films. Remarkably, the resistivities of these films are three orders of magnitude smaller compared with unoptimized films grown even on the same substrate. The magnetotransport properties were determined as a function of temperature and applied field magnitude, and compared with bulk crystals and vacuum-deposited single crystalline (epitaxial) thin films as well as manganite nanostructures reported in the literature. Both films display large values of colossal magnetoresistance at around room temperature. Significantly, the magnetoresistance in (100) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin film is observed to be highly linear even at low fields near the metal-insulator transition temperature. However, the dependence of these promising properties on the nanocrystal size remains to be explored.

  15. Chemical Solutions of Fire Protection Problems

    Directory of Open Access Journals (Sweden)

    Vakhitova, L.M.

    2015-11-01

    Full Text Available The modern approaches to the creation of fire protective coatings by modifying intumescent systems by nanomaterials with study of the chemical reaction mechanisms under the high temperatures influence were considered. A systematic study of the interactions of components of polyphosphate type intumescent blend were carried out, a well-defined correlations between the directions of chemical processes and fire retardant properties of intumescent coatings were found. Efficient ways to simultaneous increase of fireprotective efficiency and performance characteristics of intumescent coatings (operatin life, resistance to environmental factors and bioсontamination were proposed. The results of fundamental research allowed to develop new formulations of flame retardant compositions, whose properties have been confirmed by tests in accordance with existing standardized methods, these results were introduced into production.

  16. Chemical milling solution produces smooth surface finish on aluminum

    Science.gov (United States)

    Lorenzen, H. C.

    1966-01-01

    Elementary sulfur mixed into a solution of caustic soda and salts produces an etchant which will chemically mill end-grain surfaces on aluminum plate. This composition results in the least amount of thickness variation and pitting.

  17. Picoliter solution deposition for total reflection X-ray fluorescence analysis of semiconductor samples

    Energy Technology Data Exchange (ETDEWEB)

    Sparks, Chris M., E-mail: chris.sparks@svtc.co [Analytical Services, SVTC Technologies, Austin, TX 78741 (United States); Fittschen, Ursula E.A. [Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Institute of Inorganic and Applied Chemistry, University of Hamburg, 20146 Hamburg (Germany); Havrilla, George J. [Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2010-09-15

    A deposition system capable of delivering picoliter quantities of solution in programmable arrays was investigated as a method for sample preparation for total reflection X-ray fluorescence (TXRF) spectroscopy. Arrays of trace metals in solution were deposited on Si wafers. The array deposits provide a capability of depositing closely spaced (100 {mu}m or less), typically 5-20 {mu}m diameter droplets in an area that can be matched to the analysis spot of the TXRF detector. The dried depositions were physically characterized and the effect of deposition type and matrix on the TXRF signal was investigated.

  18. Silica-titania composite aerogel photocatalysts by chemical liquid deposition of titania onto nanoporous silica scaffolds.

    Science.gov (United States)

    Zu, Guoqing; Shen, Jun; Wang, Wenqin; Zou, Liping; Lian, Ya; Zhang, Zhihua

    2015-03-11

    Silica-titania composite aerogels were synthesized by chemical liquid deposition of titania onto nanoporous silica scaffolds. This novel deposition process was based on chemisorption of partially hydrolyzed titanium alkoxides from solution onto silica nanoparticle surfaces and subsequent hydrolysis and condensation to afford titania nanoparticles on the silica surface. The titania is homogeneously distributed in the silica-titania composite aerogels, and the titania content can be effectively controlled by regulating the deposition cycles. The resultant composite aerogel with 15 deposition cycles possessed a high specific surface area (SSA) of 425 m(2)/g, a small particle size of 5-14 nm, and a large pore volume and pore size of 2.41 cm(3)/g and 18.1 nm, respectively, after heat treatment at 600 °C and showed high photocatalytic activity in the photodegradation of methylene blue under UV-light irradiation. Its photocatalytic activity highly depends on the deposition cycles and heat treatment. The combination of small particle size, high SSA, and enhanced crystallinity after heat treatment at 600 °C contributes to the excellent photocatalytic property of the silica-titania composite aerogel. The higher SSAs compared to those of the reported titania aerogels (aerogels promising candidates as photocatalysts.

  19. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    Science.gov (United States)

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results.

  20. Chemical models for martian weathering profiles: Insights into formation of layered phyllosilicate and sulfate deposits

    Science.gov (United States)

    Zolotov, Mikhail Yu.; Mironenko, Mikhail V.

    2016-09-01

    Numerical chemical models for water-basalt interaction have been used to constrain the formation of stratified mineralogical sequences of Noachian clay-bearing rocks exposed in the Mawrth Vallis region and in other places on cratered martian highlands. The numerical approaches are based on calculations of water-rock type chemical equilibria and models which include rates of mineral dissolution. Results show that the observed clay-bearing sequences could have formed through downward percolation and neutralization of acidic H2SO4-HCl solutions. A formation of weathering profiles by slightly acidic fluids equilibrated with current atmospheric CO2 requires large volumes of water and is inconsistent with observations. Weathering by solutions equilibrated with putative dense CO2 atmospheres leads to consumption of CO2 to abundant carbonates which are not observed in clay stratigraphies. Weathering by H2SO4-HCl solutions leads to formation of amorphous silica, Al-rich clays, ferric oxides/oxyhydroxides, and minor titanium oxide and alunite at the top of weathering profiles. Mg-Fe phyllosilicates, Ca sulfates, zeolites, and minor carbonates precipitate from neutral and alkaline solutions at depth. Acidic weathering causes leaching of Na, Mg, and Ca from upper layers and accumulation of Mg-Na-Ca sulfate-chloride solutions at depth. Neutral MgSO4 type solutions dominate in middle parts of weathering profiles and could occur in deeper layers owing to incomplete alteration of Ca minerals and a limited trapping of Ca to sulfates. Although salts are not abundant in the Noachian geological formations, the results suggest the formation of Noachian salty solutions and their accumulation at depth. A partial freezing and migration of alteration solutions could have separated sulfate-rich compositions from low-temperature chloride brines and contributed to the observed diversity of salt deposits. A Hesperian remobilization and release of subsurface MgSO4 type solutions into newly

  1. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  2. Modeling Complex Chemical Systems: Problems and Solutions

    Science.gov (United States)

    van Dijk, Jan

    2016-09-01

    Non-equilibrium plasmas in complex gas mixtures are at the heart of numerous contemporary technologies. They typically contain dozens to hundreds of species, involved in hundreds to thousands of reactions. Chemists and physicists have always been interested in what are now called chemical reduction techniques (CRT's). The idea of such CRT's is that they reduce the number of species that need to be considered explicitly without compromising the validity of the model. This is usually achieved on the basis of an analysis of the reaction time scales of the system under study, which identifies species that are in partial equilibrium after a given time span. The first such CRT that has been widely used in plasma physics was developed in the 1960's and resulted in the concept of effective ionization and recombination rates. It was later generalized to systems in which multiple levels are effected by transport. In recent years there has been a renewed interest in tools for chemical reduction and reaction pathway analysis. An example of the latter is the PumpKin tool. Another trend is that techniques that have previously been developed in other fields of science are adapted as to be able to handle the plasma state of matter. Examples are the Intrinsic Low Dimension Manifold (ILDM) method and its derivatives, which originate from combustion engineering, and the general-purpose Principle Component Analysis (PCA) technique. In this contribution we will provide an overview of the most common reduction techniques, then critically assess the pros and cons of the methods that have gained most popularity in recent years. Examples will be provided for plasmas in argon and carbon dioxide.

  3. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  4. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G.

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnOx-CVD layers.

  5. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers.

  6. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  7. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  8. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  9. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Shin Jinhong [Texas Materials Institute, University of Texas at Austin, Austin, TX 78750 (United States); Waheed, Abdul [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Winkenwerder, Wyatt A. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Kim, Hyun-Woo [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Agapiou, Kyriacos [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Jones, Richard A. [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Hwang, Gyeong S. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States)]. E-mail: ekerdt@che.utexas.edu

    2007-05-07

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO{sub 2} containing {approx} 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH{sub 2}(PMe{sub 3}){sub 4} (Me = CH{sub 3}) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

  10. Field emission properties of chemical vapor deposited individual graphene

    Energy Technology Data Exchange (ETDEWEB)

    Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

    2014-03-03

    Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10 nA current were found to be 515, 610, and 870 V/μm for vacuum gap of 400, 300, and 200 nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

  11. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki

    use as a construction material for process equipment, with the cheaper alternative being the construction of equipment from steel and then protecting it with a thin but efficacious layer of tantalum. Chemical Vapour Deposition (CVD) is chosen as the most effective process to apply thin corrosion...... protective layers of tantalum because of the process’ ability to coat complex geometries and its relative ease to control. This work focuses on studying the CVD of tantalum in long narrow channels with the view that the knowledge gained during the project can be used to optimise the commercial coating...... process that Tantaline A/S and Alfa Laval (Sweden) use to manufacture tantalum coated plate heat exchangers. Experiments are done by coating the inner side of long, thin stainless steel tubes in the temperature range of 700 – 950 °C and pressure range of 25 – 990 mbar while using different reactant...

  12. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  13. Chemical vapor deposition coatings for oxidation protection of titanium alloys

    Science.gov (United States)

    Cunnington, G. R.; Robinson, J. C.; Clark, R. K.

    1991-01-01

    Results of an experimental investigation of the oxidation protection afforded to Ti-14Al-21Nb and Ti-14Al-23Nb-2V titanium aluminides and Ti-17Mo-3Al-3Nb titanium alloy by aluminum-boron-silicon and boron-silicon coatings are presented. These coatings are applied by a combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. The former is for the application of aluminum, and the latter is for codeposition of boron and silicon. Coating thickness is in the range of 2 to 7 microns, and coating weights are 0.6 to 2.0 mg/sq cm. Oxidation testing was performed in air at temperatures to 1255 K in both static and hypersonic flow environments. The degree of oxidation protection provided by the coatings is determined from weight change measurements made during the testing and post test compositional analyses. Temperature-dependent total normal emittance data are also presented for four coating/substrate combinations. Both types of coatings provided excellent oxidation protection for the exposure conditions of this investigation. Total normal emittances were greater than 0.80 in all cases.

  14. Shape controllability and photoluminescence properties of ZnO nanorods grown by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Terasako, Tomoaki, E-mail: terasako.tomoaki.mz@ehime-u.ac.jp [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Murakami, Toshihiro [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Yagi, Masakazu [Kagawa National College of Technology, 551 Koda, Takuma-cho, Mitoyo-shi, Kagawa 769-1192 (Japan); Shirakata, Sho [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan)

    2013-12-31

    Zinc oxide (ZnO) nanorods (NRs) were synthesized on glass substrates and Au seed layers by chemical bath deposition from the aqueous solution of ZnCl{sub 2} and the mixed aqueous solution of zinc acetate dihydrate (ZnAc) and hexamethylenetetramine (HMT) at a low temperature of ∼ 90 °C. Vertically aligned NRs were successfully grown on the Au seed layers. For the NRs synthesized from the ZnCl{sub 2} solution of 0.17 M, when the growth time increased from 15 to 180 min, the average diameter and length increase from ∼ 350 to ∼ 1020 nm and from ∼ 1000 to ∼ 5600 nm, respectively. The increase in average diameter with the concentration of solution was observed on the NRs synthesized from the mixed solution of ZnAc and HMT. The influence of additional HMT was found on the shapes and density of the NRs. Photoluminescence (PL) spectra of the NRs synthesized from the solutions of ZnCl{sub 2} exhibited a dominant orange band (OB) emission at ∼ 640 nm associated with the excess-oxygen atoms. On the other hand, the NRs synthesized from the mixed solution of ZnAc and HMT exhibited a strong near-band-edge (NBE) emission at ∼ 380 nm, suggesting their high crystalline quality. For the NRs synthesized from the mixed solution of ZnAc and HMT, the OB emission is effectively excited at the photon energy corresponding to the A free exciton emission. For the NRs synthesized from the solution of ZnCl{sub 2}, however, the secondary phase Zn(OH){sub 2} formed at the surface regions of the NRs contributes to the excitation process for the OB emission. Photoacoustic (PA) measurements revealed that the intra-band-gap absorption band extending from 400 to 660 nm responsible for nonradiative transitions were suppressed in the NRs synthesized from the mixed solutions of ZnAc and HMT in comparison with those from the ZnCl{sub 2} solutions. - Highlights: • ZnO nanorods (NRs) were grown by Chemical bath deposition. • ZnCl{sub 2} and Zinc acetate dihydrate were used as Zn

  15. Structural, morphology and optical properties of chemically deposited Sb{sub 2}S{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Maghraoui-Meherzi, H., E-mail: hajer.maghraoui@laposte.ne [Laboratoire de chimie Analytique et Electrochimie, Faculte des Sciences de Tunis, Campus universitaire 2092 Tunis El Manar (Tunisia); Ben Nasr, T.; Kamoun, N. [Laboratoire de physique de la Matiere Condensee, Faculte des Sciences de Tunis, Campus universitaire 2092 Tunis El Manar (Tunisia); Dachraoui, M. [Laboratoire de chimie Analytique et Electrochimie, Faculte des Sciences de Tunis, Campus universitaire 2092 Tunis El Manar (Tunisia)

    2010-08-01

    Metal chalcogenide thin films prepared by chemical methods are currently attracting considerable attention, as they are relatively inexpensive, simple and convenient for large area deposition. Antimony sulphide (Sb{sub 2}S{sub 3}) films were deposited on glass substrate by chemical bath deposition from solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Characterization of the films was carried out with X-ray diffraction (XRD), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and UV-Vis spectrophotometry. Using these techniques, we have specified the effect of temperature and time deposition on the crystallinity structure of antimony sulphide films. Homogeneous films were found to be crystallized on orthorhombic structure, and indicate a direct band gap of 2.24 eV.

  16. Chemical evaluation of soil-solution in acid forest soils

    Science.gov (United States)

    Lawrence, G.B.; David, M.B.

    1996-01-01

    Soil-solution chemistry is commonly studied in forests through the use of soil lysimeters.This approach is impractical for regional survey studies, however, because lysimeter installation and operation is expensive and time consuming. To address these problems, a new technique was developed to compare soil-solution chemistry among red spruce stands in New York, Vermont, New Hampshire, Maine. Soil solutions were expelled by positive air pressure from soil that had been placed in a sealed cylinder. Before the air pressure was applied, a solution chemically similar to throughfall was added to the soil to bring it to approximate field capacity. After the solution sample was expelled, the soil was removed from the cylinder and chemically analyzed. The method was tested with homogenized Oa and Bs horizon soils collected from a red spruce stand in the Adirondack Mountains of New York, a red spruce stand in east-central Vermont, and a mixed hardwood stand in the Catskill Mountains of New York. Reproducibility, effects of varying the reaction time between adding throughfall and expelling soil solution (5-65 minutes) and effects of varying the chemical composition of added throughfall, were evaluated. In general, results showed that (i) the method was reproducible (coefficients of variation were generally reaction-time did not affect expelled solution concentrations, and (iii) adding and expelling solution did not cause detectable changes in soil exchange chemistry. Concentrations of expelled solutions varied with the concentrations of added throughfall; the lower the CEC, the more sensitive expelled solution concentrations were to the chemical concentrations of added throughfall. Addition of a tracer (NaBr) showed that the expelled solution was a mixture of added solution and solution that preexisted in the soil. Comparisons of expelled solution concentrations with concentrations of soil solutions collected by zero-tension and tension lysimetry indicated that expelled

  17. Bath Parameter Dependence of Chemically-Deposited Copper Selenide Thin Film

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films on to glass substrate. Different thin films (0.2-0.6 μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that complexing the Cu2+ ions with TEA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu2-xSe.

  18. Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

    2010-02-24

    Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

  19. The Physico-Chemical Conditions for Mobilization of Gold in Mobin Gold Deposit, Southwest Hunan, China

    Institute of Scientific and Technical Information of China (English)

    谷俐; 杨华; 戴塔根; 刘利萍

    2002-01-01

    Experiments on water-rock interaction were carried out on wall-rock samples from the Mobin gold deposit, Southwest Hunan, China, with the aim of determining the optimum physical and chemical conditions for the mobilization of gold in solution. Results indicate that gold is most easily mobilized from the wall rock-tuffaceous slate of the Mobin Deposit. Mobi lization is optimized if fluids are neutral to slightly alkaline and contain both chlorine and sulphur ions at the concentration and composition of about [0.25M (NH4)2S + 1M NaCl]. The amount of gold leached from the tuffaceous slate increases with temperature although the effect decreases above about 200℃ .

  20. Laser diagnostics of chemical vapour deposition of diamond films

    CERN Document Server

    Wills, J B

    2002-01-01

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH sub 4 / H sub 2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH sub 3 , NH and C sub 2 H sub 2 in a hot filament (HF) activated gas mixture and CH, C sub 2 and C sub 2 H sub 2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH sub 3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O sub 2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (approx 10 sup 1 sup 3 molecules / cm...

  1. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  2. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  3. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  4. Fabrication of ZnO nanorod using spray-pyrolysis and chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Ramadhani, Muhammad F., E-mail: brian@tf.itb.ac.id; Pasaribu, Maruli A. H., E-mail: brian@tf.itb.ac.id; Yuliarto, Brian, E-mail: brian@tf.itb.ac.id; Nugraha, E-mail: brian@tf.itb.ac.id [Advanced Functional Materials Laboratory, Engineering Physics Department Faculty of Industrial Technology, Institut Teknologi Bandung (Indonesia)

    2014-02-24

    ZnO thin films with nanorod structure were deposited using Ultrasonic Spray Pyrolysis method for seed growth, and Chemical Bath Deposition (CBD) for nanorod growth. High purity Zn-hydrate and Urea are used to control Ph were dissolved in ethanol and aqua bidest in Ultrasonic Spray Pyrolysis process. Glass substrate was placed above the heater plate of reaction chamber, and subsequently sprayed with the range duration of 5, 10 and 20 minutes at the temperatures of 3500 C. As for the Chemical Bath Deposition, the glass substrate with ZnO seed on the surface was immerse to Zn-hydrate, HMTA (Hexa Methylene Tetra Amine) and deionized water solution for duration of 3, 5 and 7 hour and temperatures of 600 C, washed in distilled water, dried, and annealed at 3500 C for an hour. The characterization of samples was carried out to reveal the surface morphology using Scanning Electron Microscopy (SEM). From the data, the combination of 5 minutes of Ultrasonic Spray Pyrolysis process and 3 hour of CBD has showed the best structure of nanorod. Meanwhile the longer Spraying process and CBD yield the bigger nanorod structure that have been made, and it makes the films more dense which make the nanorod collide each other and as a result produce unsymetric nanorod structure.

  5. Microstructural and Electrical Characterization of Barium Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

    Science.gov (United States)

    2003-04-03

    Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition DISTRIBUTION: Approved for public...Society H2.4 Microstructural and Electrical Characterization of Barium Strontium Titanate- based Solid Solution Thin Films Deposited on Ceramic...investigated and report the microstructural and electrical characterization of selected barium strontium titanate-based solid solution thin films

  6. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  7. Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Science.gov (United States)

    Uno, Kazuyuki; Yamasaki, Yuichiro; Tanaka, Ichiro

    2017-01-01

    The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

  8. Shallow chemical bath deposition of ZnS buffer layer for environmentally benign solar cell devices

    Science.gov (United States)

    Choubey, R. K.; Kumar, Sunil; Lan, C. W.

    2014-06-01

    Zinc sulfide (ZnS) thin film was grown by a shallow chemical bath deposition (SCBD) technique. In this technique a highly conducting hot plate was used to heat the substrate, while higher thermal gradient was achieved by a shallow bath of the ZnS solution. Consequently, homogeneous nucleation is reduced and quality of ZnS thin films can be improved by shaking. The main advantage of this technique over a traditional one is that the use of solution can be reduced greatly, which is crucial for cost reduction in practice. The effects of shaking on growth kinetics and film properties were investigated by characterizing the as-grown ZnS thin films by x-ray diffraction, transmittance and scanning electron microscopy (SEM).

  9. The effect of different complexing agents on the properties of zinc sulfide thin films deposited from aqueous solutions

    OpenAIRE

    2016-01-01

    The zinc sulfide (ZnS) thin films were prepared on glass substrates by chemical bath deposition using the aqueous solutions of zinc chloride, thiourea, pH regulator and complexing agent (ammonia and hydrazine hydrate, trisodium citrate or sodium hydroxide). The calculations of boundary conditions for formation of zinc sulfide and zinc hydroxide were made at various zinc salt concentrations with different complexing agents. The structural, morphology and optical properties of the ZnS thin film...

  10. Molecular Dynamics Simulations of Solutions at Constant Chemical Potential

    CERN Document Server

    Perego, Claudio; Parrinello, Michele

    2015-01-01

    Molecular Dynamics studies of chemical processes in solution are of great value in a wide spectrum of applications, that range from nano-technology to pharmaceutical chemistry. However, these calculations are affected by severe finite-size effects, such as the solution being depleted as the chemical process proceeds, that influence the outcome of the simulations. To overcome these limitations, one must allow the system to exchange molecules with a macroscopic reservoir, thus sampling a Grand-Canonical ensemble. Despite the fact that different remedies have been proposed, this still represents a key challenge in molecular simulations. In the present work we propose the C$\\mu$MD method, which introduces an external force that controls the environment of the chemical process of interest. This external force, drawing molecules from a finite reservoir, maintains the chemical potential constant in the region where the process takes place. We have applied the C$\\mu$MD method to the paradigmatic case of urea crystall...

  11. (0 0 l)-oriented Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub y} and Ca{sub 3}Co{sub 4}O{sub 9} films: Self-assembly orientation and growth mechanism by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Xuebin, E-mail: xbzhu@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)] [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Shi Dongqi; Dou Shixue [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Sun Yuping [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Li Qi; Wang Lin; Li Wenxian [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Yeoh Weikong; Zheng Rongkun [Australian Key Centre for Microscopy and Microanalysis, University of Sydney, Sydney, NSW 2006 (Australia); Chen Zhixin [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Kong Chunxiu [Electron Microscope Unit, University of New South Wales, NSW 2052, Sydney (Australia)

    2010-07-15

    In this study, two typical cobaltate-based thermoelectric films, Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub y} (BSC) and Ca{sub 3}Co{sub 4}O{sub 9} (CCO), with structures of [Bi{sub 2}Sr{sub 2}O{sub 4}][CoO{sub 2}]{sub 2} and [Ca{sub 2}CoO{sub 3}]{sup RS}[CoO{sub 2}], respectively, are prepared by a simple chemical solution deposition on SrTiO{sub 3} (1 0 0), (1 1 0), and (1 1 1) single crystal substrates. X-ray results reveal that all films are c-axis oriented regardless of the orientation of the substrate, suggesting self-assembly orientation. Transmission electron microscopy reveals amorphous/delamination regions for BSC film on SrTiO{sub 3} (1 1 0), and the c-axis stripes of CCO on SrTiO{sub 3} (1 1 1) are inclined at 30{sup o} to the interface, whereas the c-axis stripes are parallel to the interfaces for other films. The growth mechanism is established, and the driving force for self-assembly c-axis orientation is attributed to the syneresis stress due to solvent evaporation. The microstructures and properties are also studied and discussed, with the conclusion that self-assembly c-axis oriented layered cobaltates films are good candidates for thermoelectric applications.

  12. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  13. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  14. On The Stability Of Model Flows For Chemical Vapour Deposition

    Science.gov (United States)

    Miller, Robert

    2016-11-01

    The flow in a chemical vapour deposition (CVD) reactor is assessed. The reactor is modelled as a flow over an infinite-radius rotating disk, where the mean flow and convective instability of the disk boundary layer are measured. Temperature-dependent viscosity and enforced axial flow are used to model the steep temperature gradients present in CVD reactors and the pumping of the gas towards the disk, respectively. Increasing the temperature-dependence parameter of the fluid viscosity (ɛ) results in an overall narrowing of the fluid boundary layer. Increasing the axial flow strength parameter (Ts) accelerates the fluid both radially and axially, while also narrowing the thermal boundary layer. It is seen that when both effects are imposed, the effects of axial flow generally dominate those of the viscosity temperature dependence. A local stability analysis is performed and the linearized stability equations are solved using a Galerkin projection in terms of Chebyshev polynomials. The neutral stability curves are then plotted for a range of ɛ and Ts values. Preliminary results suggest that increasing Ts has a stabilising effect on both type I and type II stationary instabilities, while small increases in ɛ results in a significant reduction to the critical Reynolds number.

  15. Charged impurity-induced scatterings in chemical vapor deposited graphene

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ming-Yang; Tang, Chiu-Chun [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ling, D. C. [Department of Physics, Tamkang University, Tamsui Dist., New Taipei 25137, Taiwan (China); Li, L. J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Chi, C. C.; Chen, Jeng-Chung [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2013-12-21

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  16. Chemical vapor deposited silica coatings for solar mirror protection

    Science.gov (United States)

    Gulino, Daniel A.; Dever, Therese M.; Banholzer, William F.

    1988-01-01

    A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica films, and hence such films would be desirable for this application.

  17. High surface area graphene foams by chemical vapor deposition

    Science.gov (United States)

    Drieschner, Simon; Weber, Michael; Wohlketzetter, Jörg; Vieten, Josua; Makrygiannis, Evangelos; Blaschke, Benno M.; Morandi, Vittorio; Colombo, Luigi; Bonaccorso, Francesco; Garrido, Jose A.

    2016-12-01

    Three-dimensional (3D) graphene-based structures combine the unique physical properties of graphene with the opportunity to get high electrochemically available surface area per unit of geometric surface area. Several preparation techniques have been reported to fabricate 3D graphene-based macroscopic structures for energy storage applications such as supercapacitors. Although reaserch has been focused so far on achieving either high specific capacitance or high volumetric capacitance, much less attention has been dedicated to obtain high specific and high volumetric capacitance simultaneously. Here, we present a facile technique to fabricate graphene foams (GF) of high crystal quality with tunable pore size grown by chemical vapor deposition. We exploited porous sacrificial templates prepared by sintering nickel and copper metal powders. Tuning the particle size of the metal powders and the growth temperature allow fine control of the resulting pore size of the 3D graphene-based structures smaller than 1 μm. The as-produced 3D graphene structures provide a high volumetric electric double layer capacitance (165 mF cm-3). High specific capacitance (100 Fg-1) is obtained by lowering the number of layers down to single layer graphene. Furthermore, the small pore size increases the stability of these GFs in contrast to the ones that have been grown so far on commercial metal foams. Electrodes based on the as-prepared GFs can be a boost for the development of supercapacitors, where both low volume and mass are required.

  18. Electrical Conductivity and Chemical Composition of Soil Solution: Comparison of Solution Samplers in Tropical Soils

    Directory of Open Access Journals (Sweden)

    Davi Lopes do Carmo

    2016-01-01

    Full Text Available ABSTRACT Soil solution samplers may have the same working principle, but they differ in relation to chemical and physical characteristics, cost and handling, and these aspects exert influence on the chemical composition of the soil solution obtained. This study was carried out to evaluate, over time, the chemical composition of solutions extracted by Suolo Acqua, with the hydrophilic membrane (HM as a standard, using soils with contrasting characteristics, and to determine the relationship between electrical conductivity (EC and concentration of ions and pH of soil solution samples. This study was carried out under laboratory conditions, using three soils samples with different clay and organic matter (OM contents. Soil solution contents of F−, Cl−, NO−3, Br−, SO42−, Na+, NH4+, K+, Mg2+, Ca2+, were analyzed, as well as inorganic, organic, and total C contents, pH, and EC, in four successive sampling times. Soil solution chemical composition extracted by the Suolo Acqua sampler is similar to that collected by the HM, but the Suolo Acqua extracted more Na+ and soluble organic C than the HM solution. Solution EC, cation and anion concentrations, and soluble C levels are higher in the soil with greater clay and OM contents (Latossolo and Cambissolo in this case. Soil solution composition varied over time, with considerable changes in pH, EC, and nutrient concentrations, especially associated with soil OM. Thus, single and isolated sampling of the soil solution must be avoided, otherwise composition of the soil solution may not be correctly evaluated. Soil solution EC was regulated by pH, as well as the sum of cation and anion concentrations, and the C contents determined in the soil liquid phase.

  19. Influence of a Propagating Megahertz Surface Acoustic Wave on the Pattern Deposition of Solute Mass off an Evaporating Solution.

    Science.gov (United States)

    Mhatre, Sameer; Zigelman, Anna; Abezgauz, Ludmila; Manor, Ofer

    2016-09-20

    We study the influence of a megahertz Rayleigh surface acoustic wave (SAW), propagating in a solid substrate, on the pattern deposition of a solute mass off an evaporating solution. An experimental procedure, where a film of a solution undergoes a controlled evaporation in a chamber, shows that the SAW alters the state of the pattern deposition. Increasing the power of the SAW supports an increase in the density of the deposited patterns. Beyond threshold conditions, the deposited patterns merge and we observe the deposition of a solid film. A simplified theory suggests that the SAW deforms the geometry of the film, which is predominantly governed by the capillary stress. The deformation of the film taking place alongside with the evaporation of the solution increases the concentration near the pinned three phase contact line at the front of the film, which is closer to the source of the SAW, on the expense of the concentration at the rear. The increased concentration translates to the deposition of solute mass over an increased area near the front of the film, which explains the experimental observation.

  20. Hydrazine-Free Solution-Deposited CuIn(S,Se)2 Solar Cells by Spray Deposition of Metal Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Arnou, Panagiota; van Hest, Maikel F. A. M.; Cooper, Carl S.; Malkov, Andrei V.; Walls, John M.; Bowers, Jake W.

    2016-05-18

    Solution processing of semiconductors, such as CuInSe2 and its alloys (CIGS), can significantly reduce the manufacturing costs of thin film solar cells. Despite the recent success of solution deposition approaches for CIGS, toxic reagents such as hydrazine are usually involved, which introduce health and safety concerns. Here, we present a simple and safer methodology for the preparation of high-quality CuIn(S, Se)2 absorbers from metal sulfide solutions in a diamine/dithiol mixture. The solutions are sprayed in air, using a chromatography atomizer, followed by a postdeposition selenization step. Two different selenization methods are explored resulting in power conversion efficiencies of up to 8%.

  1. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  2. Chemical bath deposition and characterization of Cu2O-CuxS thin films

    OpenAIRE

    EYA, D. D. O.

    2010-01-01

    Cu2O-CuxS thin films have been deposited on glass substrate by chemical bath deposition technique. The films were obtained by depositing Copper Sulphide (CuxS) on Copper (I) Oxide (Cu2O) and then Cu2O on CuxS. The peak solar transmittance across the thin films were found to be

  3. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying substrat

  4. Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

    NARCIS (Netherlands)

    Aresta, G.; Palmans, J.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Organosilicon layers have been deposited from 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3) by means of the initiated-chemical vapor deposition (i-CVD) technique in a deposition setup, ad hoc designed for the engineering of multilayer moisture permeation barriers. The application of Fourier

  5. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method.

    Science.gov (United States)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-07-08

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]n(RS)[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures.

  6. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    Science.gov (United States)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  7. Combined physical and chemical nonequilibrium transport model for solution conduits.

    Science.gov (United States)

    Field, Malcolm S; Leij, Feike J

    2014-02-01

    Solute transport in karst aquifers is primarily constrained to relatively complex and inaccessible solution conduits where transport is often rapid, turbulent, and at times constrictive. Breakthrough curves generated from tracer tests in solution conduits are typically positively-skewed with long tails evident. Physical nonequilibrium models to fit breakthrough curves for tracer tests in solution conduits are now routinely employed. Chemical nonequilibrium processes are likely important interactions, however. In addition to partitioning between different flow domains, there may also be equilibrium and nonequilibrium partitioning between the aqueous and solid phases. A combined physical and chemical nonequilibrium (PCNE) model was developed for an instantaneous release similar to that developed by Leij and Bradford (2009) for a pulse release. The PCNE model allows for partitioning open space in solution conduits into mobile and immobile flow regions with first-order mass transfer between the two regions to represent physical nonequilibrium in the conduit. Partitioning between the aqueous and solid phases proceeds either as an equilibrium process or as a first-order process and represents chemical nonequilibrium for both the mobile and immobile regions. Application of the model to three example breakthrough curves demonstrates the applicability of the combined physical and chemical nonequilibrium model to tracer tests conducted in karst aquifers, with exceptionally good model fits to the data. The three models, each from a different state in the United States, exhibit very different velocities, dispersions, and other transport properties with most of the transport occurring via the fraction of mobile water. Fitting the model suggests the potentially important interaction of physical and chemical nonequilibrium processes.

  8. Control of crystallite size in diamond film chemical vapor deposition

    Science.gov (United States)

    Moran, Mark B.; Johnson, Linda F.; Klemm, Karl A.

    1992-12-01

    In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.

  9. Zinc oxide nanostructures by chemical vapour deposition as anodes for Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Laurenti, M., E-mail: marco.laurenti@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Garino, N. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Porro, S.; Fontana, M. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Gerbaldi, C., E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy)

    2015-08-15

    Highlights: • ZnO nanostructures are grown by simple chemical vapour deposition. • Polycrystalline nanostructured porous thin film is obtained. • Film exhibits stable specific capacity (∼400 mA h g{sup −1}) after prolonged cycling. • CVD-grown ZnO nanostructures show promising prospects as Li-ion battery anode. - Abstract: ZnO nanostructures are grown by a simple chemical vapour deposition method directly on a stainless steel disc current collector and successfully tested in lithium cells. The structural/morphological characterization points out the presence of well-defined polycrystalline nanostructures having different shapes and a preferential orientation along the c-axis direction. In addition, the high active surface of the ZnO nanostructures, which accounts for a large electrode/electrolyte contact area, and the complete wetting with the electrolyte solution are considered to be responsible for the good electrical transport properties and the adequate electrochemical behaviour, as confirmed by cyclic voltammetry and galvanostatic charge/discharge cycling. Indeed, despite no binder or conducting additives are used, when galvanostatically tested in lithium cells, after an initial decay, the ZnO nanostructures can provide a rather stable specific capacity approaching 70 μA h cm{sup −2} (i.e., around 400 mA h g{sup −1}) after prolonged cycling at 1 C, with very high Coulombic efficiency and an overall capacity retention exceeding 62%.

  10. Chemical Stability of Titania and Alumina Thin Films Formed by Atomic Layer Deposition.

    Science.gov (United States)

    Correa, Gabriela C; Bao, Bo; Strandwitz, Nicholas C

    2015-07-15

    Thin films formed by atomic layer deposition (ALD) are being examined for a variety of chemical protection and diffusion barrier applications, yet their stability in various fluid environments is not well characterized. The chemical stability of titania and alumina thin films in air, 18 MΩ water, 1 M KCl, 1 M HNO3, 1 M H2SO4, 1 M HCl, 1 M KOH, and mercury was studied. Films were deposited at 150 °C using trimethylaluminum-H2O and tetrakis(dimethylamido)titanium-H2O chemistries for alumina and titania, respectively. A subset of samples were heated to 450 and 900 °C in inert atmosphere. Films were examined using spectroscopic ellipsometry, atomic force microscopy, optical microscopy, scanning electron microscopy, and X-ray diffraction. Notably, alumina samples were found to be unstable in pure water, acid, and basic environments in the as-synthesized state and after 450 °C thermal treatment. In pure water, a dissolution-precipitation mechanism is hypothesized to cause surface roughening. The stability of alumina films was greatly enhanced after annealing at 900 °C in acidic and basic solutions. Titania films were found to be stable in acid after annealing at or above 450 °C. All films showed a composition-independent increase in measured thickness when immersed in mercury. These results provide stability-processing relationships that are important for controlled etching and protective barrier layers.

  11. Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Lately, there has been a sharp increase in the publication of papers on chemical bath deposition of CdS thin films and related materials due to successful results obtained using this method to fabricate CdS thin-film buffer layers for CuInSe{sub 2}- and CdTe-based polycrystalline thin-film solar cells. Generally, these papers focus on previously proposed methods of studying film characteristics without a systematic study of the influence of deposition conditions on film characteristics. In this paper the authors present an exhaustive study of the chemical bath-deposited CdS thin films electro-optical properties dependence on deposition variables. The authors propose not only a set of conditions for obtaining CdS thin films by this method but additionally, suitable deposition process conditions for certain application requirements, such as buffer layers for thin-film solar cells. The observed electro-optical characteristics dependence on the deposition variables corroborates the chemical mechanism that they proposed previously for this process.

  12. Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis

    Science.gov (United States)

    Juma, A.; Oja Acik, I.; Oluwabi, A. T.; Mere, A.; Mikli, V.; Danilson, M.; Krunks, M.

    2016-11-01

    Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO2 thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO2 thin films were uniform and homogeneous showing much smaller grains than the undoped TiO2 films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO2 film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO4 phase started forming after annealing at 800 °C. The optical band gap for TiO2 decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO2:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

  13. A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2015-03-01

    Full Text Available The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H thin film transistors (TFTs has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD and hot-wire chemical vapor deposition (HW-CVD at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50% can be deposited by HW-CVD all the way down to room temperature.

  14. Dopamine-melanin film deposition depends on the used oxidant and buffer solution.

    Science.gov (United States)

    Bernsmann, Falk; Ball, Vincent; Addiego, Frédéric; Ponche, Arnaud; Michel, Marc; Gracio, José Joaquin de Almeida; Toniazzo, Valérie; Ruch, David

    2011-03-15

    The deposition of "polydopamine" films, from an aqueous solution containing dopamine or other catecholamines, constitutes a new and versatile way to functionalize solid-liquid interfaces. Indeed such films can be deposited on almost all kinds of materials. Their deposition kinetics does not depend markedly on the surface chemistry of the substrate, and the films can reach thickness of a few tens of nanometers in a single reaction step. Up to now, even if a lot is known about the oxidation mechanism of dopamine in solution, only little information is available to describe the deposition mechanism on surfaces either by oxidation in solution or by electrodeposition. The deposition kinetics of melanin was only investigated from dopamine solutions using oxygen or ammonium persulfate as an oxidant and from a tris(hydroxymethyl) aminomethane (Tris) containing buffer solutions at pH 8.5. Many other oxidants could be used, and the buffer agent containing a primary amine group may influence the deposition process. Herein we show that the deposition kinetics of melanin from dopamine containing buffers at pH 8.5 can be markedly modified using Cu(2+) instead of O2 as an oxidant: the deposition kinetics remains linear up to thicknesses of more than 70 nm, whereas the film growth stops at 45 ± 5 nm in the presence of 02. In addition, the films prepared from Cu(2+) containing solutions display an absorption spectrum with defined peaks at 320 and 370 nm, which are absent in the spectra of films prepared in oxygenated solutions. The replacement of Tris buffer by phosphate buffer also has a marked effect on the melanin deposition kinetics.

  15. Fabrication of complex oxide microstructures by combinatorial chemical beam vapour deposition through stencil masks

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, E. [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Sandu, C.S., E-mail: cosmin.sandu@3d-oxides.com [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, Station 12, CH-1015 Lausanne (Switzerland); Harada, S.; Benvenuti, G. [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Savu, V. [Laboratoire de Microsystèmes 1, Ecole Polytechnique Fédérale de Lausanne, Station 17, CH-1015 Lausanne (Switzerland); Muralt, P. [Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, Station 12, CH-1015 Lausanne (Switzerland)

    2015-07-01

    Chemical Beam Vapour Deposition is a gas phase deposition technique, operated under high vacuum conditions, in which evaporated chemical precursors are thermally decomposed on heated substrates to form a film. In the particular equipment used in this work, different chemical beams effuse from a plurality of punctual precursor sources with line of sight trajectory to the substrate. A shadow mask is used to produce 3D-structures in a single step, replicating the apertures of a stencil as deposits on the substrate. The small gap introduced between substrate and mask induces a temperature difference between both surfaces and is used to deposit selectively solely on the substrate without modifying the mask, taking advantage of the deposition rate dependency on temperature. This small gap also enables the deposition of complex patterned structures resulting from the superposition of many patterns obtained using several precursor beams from different directions through a single mask aperture. A suitable process parameter window for precursor flow and substrate temperature is evidenced to maximize resolution. - Highlights: • Micro-feature growth with stencil mask by Chemical Beam Vapour Deposition • Growth of complex structured oxide films in one step • The gap between substrate and mask avoids deposition on the stencil. • Fabrication of 3D structures by superposing deposits from several beams • The versatile setup combines few chemical beams, variable geometry and stencil mask patterns.

  16. Solution Layer Deposition: A Technique for the Growth of Ultra-Pure Manganese Oxides on Silica at Room Temperature.

    Science.gov (United States)

    Cure, Jérémy; Piettre, Kilian; Coppel, Yannick; Beche, Eric; Esvan, Jérôme; Collière, Vincent; Chaudret, Bruno; Fau, Pierre

    2016-02-24

    With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high-purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal-organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal-organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid-state (29) Si MAS NMR, XPS, SIMS, and HRTEM.

  17. Functionalization of Hydrogenated Chemical Vapour Deposition-Grown Graphene by On-Surface Chemical Reactions.

    Science.gov (United States)

    Drogowska, Karolina; Kovaříček, Petr; Kalbáč, Martin

    2017-03-23

    The reactivity of hydrogenated graphene when treated with oxidising agents, KMnO4 and KIO4 , as well as alkylated with benzyl bromide (BnBr) was studied. The probed reactions are strictly limited to the partly hydrogenated form of graphene in which most of the hydrogen atoms are located in activated benzylic/allylic positions. This, in turn, clearly demonstrates the presence of hydrogen attached to the graphene lattice. Attachment of the benzyl group was also unequivocally demonstrated by characteristic vibrations recorded in the surface-enhanced Raman spectra, and all reactions were shown to proceed solely on hydrogenated graphene as evidenced by the comparison with pristine chemical vapour deposition-grown graphene.

  18. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  19. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    OpenAIRE

    2015-01-01

    To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition): SILAR (Successive Ionic Layer Adsorption and Reaction) and PCBD (Photo Chemical Bath Deposition), all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap ...

  20. Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    Science.gov (United States)

    Sheikholeslami, M. Z.; Jasinski, T.; Fretz, K. W.

    1988-01-01

    In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.

  1. Delay chemical master equation: direct and closed-form solutions

    Science.gov (United States)

    Leier, Andre; Marquez-Lago, Tatiana T.

    2015-01-01

    The stochastic simulation algorithm (SSA) describes the time evolution of a discrete nonlinear Markov process. This stochastic process has a probability density function that is the solution of a differential equation, commonly known as the chemical master equation (CME) or forward-Kolmogorov equation. In the same way that the CME gives rise to the SSA, and trajectories of the latter are exact with respect to the former, trajectories obtained from a delay SSA are exact representations of the underlying delay CME (DCME). However, in contrast to the CME, no closed-form solutions have so far been derived for any kind of DCME. In this paper, we describe for the first time direct and closed solutions of the DCME for simple reaction schemes, such as a single-delayed unimolecular reaction as well as chemical reactions for transcription and translation with delayed mRNA maturation. We also discuss the conditions that have to be met such that such solutions can be derived. PMID:26345616

  2. Fabrication of Isotropic Pyrocarbon at 1400℃ by Thermal Gradient Chemical Vapor Deposition Apparatus

    Institute of Scientific and Technical Information of China (English)

    GUO Lingjun; ZHANG Dongsheng; LI Kezhi; LI Hejun

    2009-01-01

    An experiment was designed to prepare isotropic pyrocarbon by thermal gradient chemical vapor deposition apparatus.The deposition was performed under ambient atmosphere at 1400℃,with natural gas volume flow of 3.5 m~3/h for 80 h.The results show that the thickness and the bulk density of the deposit are about 1.95 g/cm~3 and 10 mm,respectively.The microstructure of the deposit was examined by polarized light microscopy and scanning electron microscopy,which shows that the deposit is constituted of sphere isotropic pyrocarbon,pebble pyrocarbon and laminar pyrocarbon.

  3. Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles

    Science.gov (United States)

    Zdansky, K.; Kacerovsky, P.; Zavadil, J.; Lorincik, J.; Fojtik, A.

    2007-09-01

    Pd nanoparticles were prepared with reverse micelles of water/AOT/isooctane solution and deposited onto silicon or InP substrates by electrophoresis. A large change of capacitance-voltage characteristics of mercury contacts on a semiconductor was found after Pd deposition. This change could be modified when the Pd deposition is followed by a partial removal of the deposited AOT. The deposited Pd nanoparticles were investigated by optical mictroscopy, SIMS and SEM. Finally, Schottky diodes with barrier height as high as 1.07 eV were prepared by deposition of Pd nanoparticles on n-type InP and by a partial removal of superfluous AOT. These diodes are prospective structures for further testing as hydrogen sensors.

  4. Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles

    Directory of Open Access Journals (Sweden)

    Fojtik A

    2007-01-01

    Full Text Available AbstractPd nanoparticles were prepared with reverse micelles of water/AOT/isooctane solution and deposited onto silicon or InP substrates by electrophoresis. A large change of capacitance-voltage characteristics of mercury contacts on a semiconductor was found after Pd deposition. This change could be modified when the Pd deposition is followed by a partial removal of the deposited AOT. The deposited Pd nanoparticles were investigated by optical mictroscopy, SIMS and SEM. Finally, Schottky diodes with barrier height as high as 1.07 eV were prepared by deposition of Pd nanoparticles on n-type InP and by a partial removal of superfluous AOT. These diodes are prospective structures for further testing as hydrogen sensors.

  5. Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD

    Directory of Open Access Journals (Sweden)

    Denis V. Nazarov

    2015-12-01

    Full Text Available In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD, chemical etching and atomic layer deposition (ALD. For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions and the etching time have a significant qualitative impact on the nanotitanium surface structure both at the nano- and microscale. The etched samples were coated with crystalline biocompatible TiO2 films with a thickness of 20 nm by Atomic Layer Deposition (ALD. Comparative study of the adhesive and spreading properties of human osteoblasts MG-63 has demonstrated that presence of nano- and microscale structures and crystalline titanium oxide on the surface of nanotitanium improve bioactive properties of the material.

  6. A Two-Level Undercut-Profile Substrate for Chemical-Solution-Based Filamentary Coated Conductors

    DEFF Research Database (Denmark)

    Wulff, Anders Christian; Lundeman, Jesper H.; Hansen, Jørn B.

    2016-01-01

    . In the present study, the 2LUPS concept is applied to a commercial cube-textured Ni-5at.% W tape, and the surface of the 2LUPS coated with two Gd2Zr2O7 buffer layers using chemical solution deposition is examined. Except for narrow regions near the edge of upper plateaus, the plateaus are found to be covered......A recently developed two-level undercut-profile substrate (2LUPS), containing two levels of plateaus connected by a curved wall with an undercut profile, enables self-forming filaments in a coated conductor during physical line-of-sight deposition of buffer and superconducting layers...... by strongly textured Gd2Zr2O7 buffer layers after dip coating and sintering....

  7. Composition and morphological characteristics of chemically sprayed fluorine-doped zinc oxide thin films deposited on Si(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Castaneda, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510 D. F. (Mexico); Departamento de Fisica y Matematicas, Division de Ciencia, Arte y Tecnologia, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D. F. (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Apartado Postal 14740, Mexico, D.F. 07000 (Mexico); Cheang-Wong, J.C. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Apartado Postal 20-364, Mexico, D.F. 01000 (Mexico); Terrones, M. [Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas, 4a. seccion, San Luis Potosi, 78216 (Mexico); Departamento de Fisica y Matematicas, Division de Ciencia, Arte y Tecnologia, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D. F. (Mexico); Olvera, M. de la L [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Apartado Postal 14740, Mexico, D.F. 07000 (Mexico)]. E-mail: molvera@cinvestav.mx

    2007-03-01

    Fluorine-doped zinc oxide thin films (ZnO:F) were deposited on Si(1 0 0) substrates by the chemical spray technique (CST) from an aged-solution. The effect of the substrate temperature on the morphology and composition of the ZnO:F thin films was studied. The films were polycrystalline, with a preferential growth along the ZnO (0 0 2) plane, irrespective of the deposition temperature. The average crystal size within the films was ca. 35 nm and the morphology of the surface was found to be dependent on the substrate temperature. At low substrate temperatures irregular-shaped grains were observed, whereas at higher temperatures uniform flat grains were obtained. Elemental analysis showed that the composition of the films is close to stoichiometric ZnO and that samples contain quite a low fluorine concentration, which decreases as a function of the deposition temperature.

  8. All hot wire chemical vapor deposition low substrate temperature transparent thin film moisture barrier

    NARCIS (Netherlands)

    Spee, D.A.; Schipper, M.R.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2013-01-01

    We deposited a silicon nitride/polymer hybrid multilayer moisture barrier for flexible electronics in a hot wire chemical vapor deposition process, entirely below 100 °C. We were able to reach a water vapor transmission rate (WVTR) as low as 5×10−6 g/m2/day at a temperature of 60 °C and a relative h

  9. Low temperature junction growth using hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  10. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  11. Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

    NARCIS (Netherlands)

    Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2014-01-01

    Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO

  12. Solution precursor plasma deposition of nanostructured CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

  13. The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition.

    Science.gov (United States)

    Vorobiev, Yuri V; Horley, Paul P; Hernández-Borja, Jorge; Esparza-Ponce, Hilda E; Ramírez-Bon, Rafael; Vorobiev, Pavel; Pérez, Claudia; González-Hernández, Jesús

    2012-08-29

    This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of the fundamental absorption edge and reduced refractive index in comparison with the corresponding bulk materials. Both effects are attributed to the material porosity which is a typical feature of chemical bath deposition technique. The blueshift is caused by quantum confinement in pores, whereas the refractive index variation is the evident result of the density reduction. Quantum mechanical description of the nanopores in semiconductor is given based on the application of even mirror boundary conditions for the solution of the Schrödinger equation; the results of calculations give a reasonable explanation of the experimental data.

  14. Optimisation of wet chemical silane deposition to improve the interfacial strength of stainless steel/epoxy

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Amit Kumar, E-mail: aghosh@vub.ac.be [Research group of Physical Chemistry and Polymer Science, Vrije Universiteit Brussel (VUB), Pleinlaan 2, B-1050 Brussels (Belgium); Bertels, Ellen; Goderis, Bart; Smet, Mario [Polymer Chemistry and Materials, KU Leuven, Celestijnenlaan 200f-box 2404, B-3001 Heverlee (Belgium); Van Hemelrijck, Danny [Department of Mechanics of Materials and Constructions, Vrije Universiteit Brussel (VUB), Pleinlaan 2, B-1050 Brussels (Belgium); Van Mele, Bruno [Research group of Physical Chemistry and Polymer Science, Vrije Universiteit Brussel (VUB), Pleinlaan 2, B-1050 Brussels (Belgium)

    2015-01-01

    Highlights: • γ-aminopropyltriethoxysilane (APS) wet surface treatment was evaluated to improve the interfacial strength of stainless steel/epoxy hybrid. • The applied methodology seems to be of major importance. • A doubling of the interfacial strength compared to non-treated samples is observed. • The obtained fracture strength value of more than 60 MPa by far exceeds values currently found in literature and approaches the epoxy fracture strength. - Abstract: The evaluation of various wet chemical deposition conditions of γ-aminopropyltriethoxysilane (APS) on stainless steel resulted in stainless steel/epoxy hybrids with improved interfacial strength. Nuclear magnetic resonance spectroscopy (NMR) revealed the working window of the silane solution used, while scanning electron microscopy (SEM) and spectroscopic ellipsometry (SE) served at characterising the final APS film structural properties. With pull-off testing the interfacial strength of surface treated steel plates in contact with an epoxy resin was determined. Fracture surface morphological features allowed identifying the failure mode. Optimisation of the different silane deposition conditions led to a doubling of the interfacial strength compared to non-treated samples. The fracture strength value of more than 60 MPa by far exceeds values currently found in literature and approaches the epoxy fracture strength by which the original adhesive failure mode converts into a more cohesive failure mode.

  15. Hot-filament chemical vapour deposition of diamond onto steel

    NARCIS (Netherlands)

    Buijnsters, Ivan

    2003-01-01

    The main goal of this project was to establish the feasibility of depositing well adhering polycrystalline diamond coatings on steel substrates. It is well known that the growth and adhesion of diamond layers directly onto steels is complicated by the high carbon solubility and the high thermal expa

  16. Apatite formation on alkaline-treated dense TiO2 coatings deposited using the solution precursor plasma spray process.

    Science.gov (United States)

    Chen, Dianying; Jordan, Eric H; Gell, Maurice; Wei, Mei

    2008-05-01

    A dense titania (TiO2) coating was deposited from an ethanol-based solution containing titanium isopropoxide using the solution precursor plasma spray (SPPS) process. XRD and Raman spectrum analyses confirmed that the coating is exclusively composed of rutile TiO2. SEM micrographs show the as-sprayed coating is dense with a uniform thickness and there are no coarse splat boundaries. The as-sprayed coating was chemically treated in 5M NaOH solution at 80 degrees C for 48 h. The bioactivity of as-sprayed and alkaline-treated coatings was investigated by immersing the coatings in simulated body fluid (SBF) for 14-28 days, respectively. After 28 days immersion, there is a complete layer of carbonate-containing apatite formed on the alkaline-treated TiO2 coating surface, but none formed on the as-sprayed coating.

  17. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  18. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  19. Zirconium doped TiO{sub 2} thin films deposited by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Juma, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Department of Physics and Astronomy, Botswana International University of Science and Technology, Private bag 16, Palapye (Botswana); Oja Acik, I., E-mail: ilona.oja@ttu.ee [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Oluwabi, A.T.; Mere, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, V.; Danilson, M. [Chair of Semiconductor Materials Technology, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, M. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

    2016-11-30

    Highlights: • Mean crystallite size of TiO{sub 2}:Zr film decreases with increasing [Zr] in the solution. • Zr doping supresses the anatase to rutile transformation process in TiO{sub 2} films. • Band gap of TiO{sub 2}:Zr film is 3.4 eV irrespective of the annealing temperature. - Abstract: Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO{sub 2} thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO{sub 2} thin films were uniform and homogeneous showing much smaller grains than the undoped TiO{sub 2} films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO{sub 2} film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO{sub 4} phase started forming after annealing at 800 °C. The optical band gap for TiO{sub 2} decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO{sub 2}:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

  20. Solution-gated graphene transistors for chemical and biological sensors.

    Science.gov (United States)

    Yan, Feng; Zhang, Meng; Li, Jinhua

    2014-03-01

    Graphene has attracted much attention in biomedical applications for its fascinating properties. Because of the well-known 2D structure, every atom of graphene is exposed to the environment, so the electronic properties of graphene are very sensitive to charged analytes (ions, DNA, cells, etc.) or an electric field around it, which renders graphene an ideal material for high-performance sensors. Solution-gated graphene transistors (SGGTs) can operate in electrolytes and are thus excellent candidates for chemical and biological sensors, which have been extensively studied in the recent 5 years. Here, the device physics, the sensing mechanisms, and the performance of the recently developed SGGT-based chemical and biological sensors, including pH, ion, cell, bacterial, DNA, protein, glucose sensors, etc., are introduced. Their advantages and shortcomings, in comparison with some conventional techniques, are discussed. Conclusions and challenges for the future development of the field are addressed in the end.

  1. Autopsy report for chemical burns from cresol solution.

    Science.gov (United States)

    Emoto, Yuko; Yoshizawa, Katsuhiko; Shikata, Nobuaki; Tsubura, Airo; Nagasaki, Yasushi

    2016-01-01

    Cresol, which is used as a disinfectant and insecticide, has erosive effects on epidermal and epithelial tissues in the body. Oral exposure causes gastrointestinal corrosive injuries as a direct chemical burn. We report herein a case of suicidal poisoning by ingestion of cresol solution. An octogenarian man with depression was found dead approximately 14 h after exposure to less than 500 mL of saponated cresol solution. Macroscopically, corrosive lesions such as red-to-brown-colored epithelium and edematous thickening of walls were seen in the skin, mouth, oral cavity, esophagus, and stomach. Histopathologically, coagulative necrosis and vascular dilatation were detected from mucosal to muscular layers in the esophagus, stomach, and duodenum. Congestive edema of the lungs, edematous changes in the brain, and proximal tubular necrosis of the kidneys were seen, suggesting acute circulatory disturbance due to shock. This human case offers valuable information on the direct irritation and shock induced by systemic exposure to corrosive substances.

  2. Functionalization and Area-Selective Deposition of Magnetic Carbon-Coated Iron Nanoparticles from Solution

    Directory of Open Access Journals (Sweden)

    Erika Widenkvist

    2011-01-01

    Full Text Available A route to area-selective deposition of carbon-coated iron nanoparticles, involving chemical modification of the surface of the particles, is described. Partial oxidative etching of the coating introduces carboxylic groups, which then are esterified. The functionalized particles can be selectively deposited on the Si areas of Si/SiO2 substrates by a simple dipping procedure. Nanoparticles and nanoassemblies have been analyzed using SEM, TEM, and XPS.

  3. Chemical vapor deposition of silicon carbide for large area mirrors

    Science.gov (United States)

    Gentilman, R. L.; Maguire, E. A.

    1982-05-01

    CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/alpha ratio and its ability to be super-polished to less than or equal to 10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.

  4. Plasma Enhanced Chemical Vapor Deposition Nanocrystalline Tungsten Carbide Thin Film and Its Electro-catalytic Activity

    Institute of Scientific and Technical Information of China (English)

    Huajun ZHENG; Chunan MA; Jianguo HUANG; Guohua LI

    2005-01-01

    Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results show that the film prepared at CH4/WF6concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20~35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V (vs SCE).

  5. Electroless deposition of bismuth on Si(111) wafer from hydrogen fluoride solutions

    Energy Technology Data Exchange (ETDEWEB)

    Romann, T., E-mail: tavo.romann@ut.e [Institute of Chemistry, University of Tartu, 2 Jakobi Street, 51014 Tartu (Estonia); Anderson, E.; Kallip, S. [Institute of Chemistry, University of Tartu, 2 Jakobi Street, 51014 Tartu (Estonia); Maendar, H.; Matisen, L. [Institute of Physics, University of Tartu, 142 Riia Street, 51014 Tartu (Estonia); Lust, E. [Institute of Chemistry, University of Tartu, 2 Jakobi Street, 51014 Tartu (Estonia)

    2010-05-03

    Thin Bi layers were deposited by simple immersion of silicon chip into diluted HF aqueous solution, containing bismuth(III) ions. Bi nanoparticles or continuous up to 300 nm thick Bi film can be grown on silicon by the variation of the temperature and deposition time. Prepared surfaces have been characterized by atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman scattering, photoluminescence and resistivity measurement methods. It was found that thinner Bi layers have a yellowish colour.

  6. A simple method for the deposition of nanostructured tellurium synthesized in ammonia solution

    Science.gov (United States)

    Gutiérrez-Lazos, C. D.; Solís-Pomar, F.; Meléndrez, M. F.; Espinoza-Rivas, A. M.; Pérez-Guzmán, M. A.; Ortega-Amaya, R.; Ortega-López, M.; Pérez-Tijerina, E.

    2016-10-01

    In this work, we report a highly adherent, and uniform deposition of nanostructured tellurium. The deposition of the nanostructured tellurium was realized by the dripping of a modified solution of NaHTe based on the dissolution of NaBH4 and tellurium powder in an aqueous solution of NH4OH. This method allowed the relatively simple manipulation of tellurium nanostructures under laboratory ambient, without requiring the use of organic stabilizers. Transmission electron microscopy (TEM) was realized on a powder sample obtained by the reaction between H2Te and aqueous solution of NH4OH. TEM analysis indicated that tellurium nanorods and Y-type nanostructures are grown from tellurium nanoparticles, such as in a hydrothermal system. Then, the nanoparticles serve as seeds for the growth of more extended tellurium nanostructures. Electron diffraction and X-ray diffraction analysis showed that depositions have the hexagonal structure of tellurium highly oriented on (101) direction.

  7. Speciation and Precipitation of Uranium Complexes in Hydrothermal Solutions Related to Granite—type Uranium Deposits

    Institute of Scientific and Technical Information of China (English)

    陈培荣; 章邦桐; 等

    1992-01-01

    Uranium-bearing hydrothermal solutions during the stage of ore deposition are weakly alkaline and of the Ca2+ -Na+/HCO3- -F- type.UO2(CO3)22- and UO2F4-, are dominant in the hydrothermal solutions with respect to their activity.Wall-rock hydrothermal alterations ,temperature and pressure drop and the reducing capability of rock assemblage (Δeh) led to a decrease in Eh of the hydrothermal solutions and an increase in Eh at which uranium began precipitating.Therefore,the mechanism of uranium precipitation is essentially the reduction of uranium complexes.The granite-type uranium deposits are the most important type of uranium resources in China.Discussions will be made in this paper concerning the hydrothermal speciation and precipitation mech-anisms of uranium complexes in the light of fluid inclusion and geological data from some major de-posits of this type in South China.

  8. A simple method for the deposition of nanostructured tellurium synthesized in ammonia solution

    Directory of Open Access Journals (Sweden)

    C. D. Gutiérrez-Lazos

    2016-02-01

    Full Text Available Abstract In this work, we report a highly adherent, and uniform deposition of nanostructured tellurium. The deposition of the nanostructured tellurium was realized by the dripping of a modified solution of NaHTe based on the dissolution of NaBH4 and tellurium powder in an aqueous solution of NH4OH. This method allowed the relatively simple manipulation of tellurium nanostructures under laboratory ambient, without requiring the use of organic stabilizers. Transmission electron microscopy (TEM was realized on a powder sample obtained by the reaction between H2Te and aqueous solution of NH4OH. TEM analysis indicated that tellurium nanorods and Y-type nanostructures are grown from tellurium nanoparticles, such as in a hydrothermal system. Then, the nanoparticles serve as seeds for the growth of more extended tellurium nanostructures. Electron diffraction and X-ray diffraction analysis showed that depositions have the hexagonal structure of tellurium highly oriented on (101 direction.

  9. PARTICLE COATING BY CHEMICAL VAPOR DEPOSITION IN A FLUIDI7ED BED REACTOR

    Institute of Scientific and Technical Information of China (English)

    Gregor; Czok; Joachim; Werther

    2005-01-01

    Aluminum coatings were created onto glass beads by chemical vapor deposition in a fluidized bed reactor at different temperatures. Nitrogen was enriched with Triisobutylaluminum (TIBA) vapor and the latter was thermally decomposed inside the fluidized bed to deposit the elemental aluminum. To ensure homogeneous coating on the bed material, the fluidizing conditions necessary to avoid agglomeration were investigated for a broad range of temperatures.The deposition reaction was modeled on the basis of a discrete particle simulation to gain insight into homogeneity and thickness of the coating throughout the bed material. In particular, the take-up of aluminum was traced for selected particles that exhibited a large mass of deposited aluminum.

  10. Co3O4 protective coatings prepared by Pulsed Injection Metal Organic Chemical Vapour Deposition

    DEFF Research Database (Denmark)

    Burriel, M.; Garcia, G.; Santiso, J.

    2005-01-01

    Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)(3) (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function...... of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 degreesC. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects...

  11. ZnS thin film deposited with chemical bath deposition process directed by different stirring speeds

    Science.gov (United States)

    Zhang, Y.; Dang, X. Y.; Jin, J.; Yu, T.; Li, B. Z.; He, Q.; Li, F. Y.; Sun, Y.

    2010-09-01

    In this combined film thickness, scanning electron microscopy (SEM), X-ray diffraction and optical properties study, we explore the effects of different stirring speeds on the growth and optical properties of ZnS film deposited by CBD method. From the disclosed changes of thickness of ZnS film, we conclude that film thickness is independent of the stirring speeds in the heterogeneous process (deposition time less than 40 min), but increases with the stirring speeds and/or deposition time increasing in the homogeneous process. Grazing incident X-ray diffraction (GIXRD) and the study of optical properties disclosed that the ZnS films grown with different stirring speeds show partially crystallized film and exhibit good transmittance (70-88% in the visible region), but the stirring speeds cannot give much effects on the structure and optical properties in the homogeneous process.

  12. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-08-31

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  13. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Pérez-García Claudia Elena

    2015-01-01

    Full Text Available To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition: SILAR (Successive Ionic Layer Adsorption and Reaction and PCBD (Photo Chemical Bath Deposition, all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap of PbS films can be monitored by deposition process due to porosity-induced quantum confinement which depends on the parameters of the process. We expect that the techniques employed can be successfully used for production of optoelectronic devices.

  14. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  15. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    Science.gov (United States)

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  16. Synthesis and Characterization of In2S3 Thin Films Deposited by Chemical Bath Deposition on Polyethylene Naphthalate Substrates

    Science.gov (United States)

    Castelo-González, O. A.; Santacruz-Ortega, H. C.; Quevedo-López, M. A.; Sotelo-Lerma, M.

    2012-04-01

    Indium sulfide (In2S3) thin films were deposited on polyethylene naphthalate (PEN) by chemical bath deposition (CBD). The materials were characterized by ultraviolet (UV)-visible spectroscopy, x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), scanning electron microscopy (SEM), and x-ray diffraction (XRD) to investigate the influence of the polymeric substrate on the resulting thin In2S3. The films showed polycrystalline (cubic and tetragonal) structure. A reduction of the ordering of the polymeric chains at the surface of the PEN was also observed, demonstrated by the appearance of two infrared bands at 1094 cm-1 and 1266 cm-1. Presence of oxygen during the early stages of In2S3 growth was also identified. We propose a reaction mechanism for both the equilibrium and nucleation stages. These results demonstrate that In2S3 can be deposited at room temperature on a flexible substrate.

  17. Electrochemical deposition of coatings of highly entropic alloys from non-aqueous solutions

    Directory of Open Access Journals (Sweden)

    Jeníček V.

    2016-03-01

    Full Text Available The paper deals with electrochemical deposition of coatings of highly entropic alloys. These relatively new materials have been recently intensively studied. The paper describes the first results of electrochemical coating with highly entropic alloys by deposition from non-aqueous solutions. An electrochemical device was designed and coatings were deposited. The coatings were characterised with electronic microscopy scanning, atomic absorption spectrometry and X-ray diffraction methods and the combination of methods of thermic analysis of differential scanning calorimetry and thermogravimetry.

  18. JOVIAN STRATOSPHERE AS A CHEMICAL TRANSPORT SYSTEM: BENCHMARK ANALYTICAL SOLUTIONS

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xi; Shia Runlie; Yung, Yuk L., E-mail: xiz@gps.caltech.edu [Division of Geological and Planetary Sciences, California Institute of Technology, Pasadena, CA 91125 (United States)

    2013-04-20

    We systematically investigated the solvable analytical benchmark cases in both one- and two-dimensional (1D and 2D) chemical-advective-diffusive systems. We use the stratosphere of Jupiter as an example but the results can be applied to other planetary atmospheres and exoplanetary atmospheres. In the 1D system, we show that CH{sub 4} and C{sub 2}H{sub 6} are mainly in diffusive equilibrium, and the C{sub 2}H{sub 2} profile can be approximated by modified Bessel functions. In the 2D system in the meridional plane, analytical solutions for two typical circulation patterns are derived. Simple tracer transport modeling demonstrates that the distribution of a short-lived species (such as C{sub 2}H{sub 2}) is dominated by the local chemical sources and sinks, while that of a long-lived species (such as C{sub 2}H{sub 6}) is significantly influenced by the circulation pattern. We find that an equator-to-pole circulation could qualitatively explain the Cassini observations, but a pure diffusive transport process could not. For slowly rotating planets like the close-in extrasolar planets, the interaction between the advection by the zonal wind and chemistry might cause a phase lag between the final tracer distribution and the original source distribution. The numerical simulation results from the 2D Caltech/JPL chemistry-transport model agree well with the analytical solutions for various cases.

  19. Solution of Chemical Dynamic Optimization Using the Simultaneous Strategies

    Institute of Scientific and Technical Information of China (English)

    LIU Xinggao; CHEN Long; HU Yunqing

    2013-01-01

    An approach of simultaneous strategies with two novel techniques is proposed to improve the solution accuracy of chemical dynamic optimization problems.The first technique is to handle constraints on control variables based on the finite-element collocation so as to control the approximation error for discrete optimal problems,where a set of control constraints at element knots are integrated with the procedure for optimization leading to a significant gain in the accuracy of the simultaneous strategies.The second technique is to make the mesh refinement more feasible and reliable by introducing length constraints and guideline in designing appropriate element length boundaries,so that the proposed approach becomes more efficient in adjusting elements to track optimal control profile breakpoints and ensure accurate state and control profiles.Four classic benchmarks of dynamic optimization problems are used as illustrations,and the proposed approach is compared with literature reports.The research results reveal that the proposed approach is preferable in improving the solution accuracy of chemical dynamic optimization problem.

  20. Ultrafine Microstructure Composites Prepared by Chemical Vapor Deposition

    Science.gov (United States)

    1989-12-01

    pressed AIN from Denka , hot pressed BN+AlN from Union Carbide (71%BN, 20%AIN, and 4%B203 ) ..... . 217 5-57 XRD patterns of BN+AlN deposited on A1203 at...side wall of the top section of the graphite extension tube as shown in Figure 3-9. The top end of the extension tube was sealed using graphite cement ...samples) are shown in Figures 5-34 through 5-36. Also, the XRD spectra of uncoated A 20,O and hot-pressed AlN ( Denka , Inc.) are included in Figure 5-34 for

  1. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Science.gov (United States)

    Shaji, S.; Garcia, L. V.; Loredo, S. L.; Krishnan, B.; Aguilar Martinez, J. A.; Das Roy, T. K.; Avellaneda, D. A.

    2017-01-01

    Antimony sulfide (Sb2S3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb2S3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb2S3 thin films for optoelectronic applications.

  2. Silicon doping techniques using chemical vapor dopant deposition

    Energy Technology Data Exchange (ETDEWEB)

    Popadic, M.

    2009-11-12

    Ultrashallow junctions are essential for the achievement of superior transistor performance, both in MOSFET and bipolar transistors. The stringent demands require state-of-the-art fabrication techniques. At the same time, in a different context, the accurate fabrication of various n type doping profiles by low-temperature Si epitaxy is a challenge due to autodoping. In this thesis, these two, apparently unrelated, problems are both addressed as the layer of CVD surface-deposited dopant atoms is used as a doping source. It is demonstrated that a layer of dopants deposited on the Si surface can be used as a doping source by either thermal or laser drive-in for the fabrication of both deep and ultrashallow defect-free junctions. In low-temperature CVD epitaxy, autodoping is a consequence of dopant surface segregation and doping from the surface layer. This process has been characterized, and consequently excellent controllability is achieved. In addition, new results related to the CVD of dopants itself are obtained, and two theoretical achievements are made: the analytical model of arbitrarily shallow junctions is derived, and a new C-V profiling technique suitable for the characterization of ultrashallow junctions is developed.

  3. A new modular multichamber plasma enhanced chemical vapor deposition system

    Science.gov (United States)

    Madan, A.; Rava, P.; Schropp, R. E. I.; von Roedern, B.

    1993-06-01

    The present work reports on a new modular UHV multichamber PECVD system with characteristics which prevent both the incorporation of residual impurities and cross contamination between different layers. A wide range of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) materials have been produced and single junction pin solar cells with an efficiency greater than 10% have been readily obtained with little optimization. The system contains three UHV modular process zones (MPZ's); the MPZ's and a load lock chamber are located around a central isolation and transfer zone which contains the transport mechanism consisting of an arm with radial and linear movement. This configuration allows for introduction of the substrate into the MPZ's in any sequence so that any type of multilayer device can be produced. The interelectrode distance in the MPZ's can be adjusted between 1 and 5 cm. This has been found to be an important parameter in the optimisation of the deposition rate and of the uniformity. The multichamber concept also allows individually optimized deposition temperatures and interelectrode distances for the various layers. The system installed in Utrecht will be employed for further optimization of single junction solar cells and for research and development of stable a-Si:H tandem cells.

  4. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  5. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    Science.gov (United States)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  6. CHEMICAL EQUILIBRIUM OF SOIL SOLUTION IN STEPPE ZONE SOIL

    Directory of Open Access Journals (Sweden)

    A. A. Batukaev

    2014-01-01

    Full Text Available Dynamics of material composition, migration and accumulation of salts is determined by chemical equilibrium in soil solution. Soil solution contains associated electrically neutral ion pairs CaCO30; CaSO40, MgCO30, MgSO40, charged ion pairs CaHCO3+, MgHCO3+, NaCO3-, NaSO4-, CaOH+, MgOH+. Calculation method is proposed for quantitative assessment of real ion forms in the soil solution of chestnut solonetz soil complex. Were proposed equations to calculate free and associated forms of ions. To solve the equations were used an iteration, a linear interpolation of equilibrium constants, a Method of Ionic Pairs including a law of initial concentration preservation, a law of the operating masses of equilibrium system, the concentration constants of ion pair dissociation on the law of operating masses. Was determined the quantity of ion free form and a coefficient of ion association as ratio of ions free form to analytical content ?e = Cass/Can. The association of ions varies in individual soils and soil layer. Increasing soil solution salinity amplifies the ions association. In form of ionic pairs in soil solution are: 11.8-53.8% of Ca2+; 9.4-57.3% of Mg2+; 0.7-11.9% of Na+; 2.2-22.3% of HCO3-, 11.8-62.7% of SO42-. The ion CO32- is high associated, the share of ions in associated form is up to 92.7%. The degree of soil solution saturation was obtained for three level of approximation accounting on analytical concentration, calculated association coefficient, calculated coefficient of association. Relating to thermodynamic solubility product S0, the mathematical product of analytical ionic pairs

  7. Preparation and analysis of chemically gradient functional bioceramic coating formed by pulsed laser deposition.

    Science.gov (United States)

    Rajesh, P; Muraleedharan, C V; Sureshbabu, S; Komath, Manoj; Varma, Harikrishna

    2012-02-01

    Bioactive ceramic coatings based on calcium phosphates yield better functionality in the human body for a variety of metallic implant devices including orthopaedic and dental prostheses. In the present study chemically and hence functionally gradient bioceramic coating was obtained by pulsed laser deposition method. Calcium phosphate bioactive ceramic coatings based on hydroxyapatite (HA) and tricalcium phosphate (TCP) were deposited over titanium substrate to produce gradation in physico-chemical characteristics and in vitro dissolution behaviour. Sintered targets of HA and α-TCP were deposited in a multi target laser deposition system. The obtained deposits were characterized by X-ray diffraction, fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray analysis. Inductively coupled plasma spectroscopy was used to estimate the in vitro dissolution behaviour of coatings. The variation in mechanical property of the gradient layer was evaluated through scratch test and micro-indentation hardness. The bioactivity was examined in vitro with respect to the ability of HA layer to form on the surface as a result of contact with simulated body fluid. It could be inferred that chemically gradient functional bioceramic coating can be produced by laser deposition of multiple sintered targets with variable chemical composition.

  8. Characterization of amorphous yttria layers deposited by aqueous solutions of Y-chelate alkoxides complex

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young-Soon, E-mail: kyscjb@i-sunam.com; Lee, Yu-Ri; Kim, Byeong-Joo; Lee, Jae-Hun; Moon, Seung-Hyun; Lee, Hunju

    2015-01-15

    Highlights: • Economical method for crack-free amorphous yttria layer deposition by dip coating. • Simpler process for planar yttria film as a diffusion barrier and nucleation layer. • Easy control over the film properties with better characteristics. • Easy control over the thickness of the deposited films. • A feasible process that can be easily adopted by HTSCC industries. - Abstract: Crack-free amorphous yttria layers were deposited by dip coating in solutions of different Y-chelate alkoxides complex. Three Y-chelate solutions of different concentrations were prepared using yttrium acetate tetrahydrate, yttrium stearic acid as Y source materials. PEG, diethanolamine were used as chelating agents, while ethanol, methanol and tetradecane were used as solvent. Three different combinations of chelating and solvents were used to prepare solutions for Y{sub 2}O{sub 3} dip coating on SUS, electropolished and non-electropolished Hastelloy C-276 substrates. The thickness of the films was varied by changing the number of dipping cycles. At an optimized condition, the substrate surface roughness (rms) value was reduced from ∼50 nm to ∼1 nm over a 10 × 10 μm{sup 2} area. After Y{sub 2}O{sub 3} deposition, MgO was deposited using ion-beam assisted deposition (IBAD), then LaMnO{sub 3} (LMO) was deposited using sputtering and GdBCO was deposited using reactive co-evaporation by deposition and reaction (RCE-DR). Detailed X-ray study indicates that LMO/MgO/Y{sub 2}O{sub 3} and GdBCO/LMO/MgO/Y{sub 2}O{sub 3} stack films have good out-of-plane and in-plane textures with strong c-axis alignment. The critical current (Ic) of GdBCO/LMO/MgO/Y{sub 2}O{sub 3} multilayer structure varied from 190 to 420 A/cm with different solutions, when measured at 77 K. These results demonstrated that amorphous yttria can be easily deposited by dip coating using Y-chelates complex as a diffusion barrier and nucleation layer.

  9. Nanoparticle-electrode collision processes: the underpotential deposition of thallium on silver nanoparticles in aqueous solution.

    Science.gov (United States)

    Zhou, Yi-Ge; Rees, Neil V; Compton, Richard G

    2011-08-01

    The electrochemistry of collisions between metal nanoparticles (NPs) and electrode surfaces has been of recent interest with the development of anodic particle coulometry as a characterisation method. For the first time the underpotential deposition of metal ions from solution onto metal nanoparticles during collisions between the NPs and an inert electrode is reported.

  10. A direct solution deposition approach to CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Miskin, Caleb K.; Dubois-Camacho, Angela; Reese, Matthew O.; Agrawal, Rakesh

    2016-01-01

    A direct solution deposition approach to CdTe thin films is presented. The difficulty of co-dissolving Te and desirable Cd salts is overcome through a diamine-thiol solvent mixture. Thin films of densely-packed, micron-sized grains are achieved after annealing without the need for chalcogen or CdCl2 vapor treatments.

  11. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

    Science.gov (United States)

    Hazbun, Ramsey; Hart, John; Hickey, Ryan; Ghosh, Ayana; Fernando, Nalin; Zollner, Stefan; Adam, Thomas N.; Kolodzey, James

    2016-06-01

    The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

  12. Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    QU Quan-yan; QIU Wan-qi; ZENG De-chang; LIU Zhong-wu; DAI Ming-jiang; ZHOU Ke-song

    2009-01-01

    The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K-cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

  13. Effects of Buffer Salt Concentration on the Dominated Deposition Mechanism and Optical Characteristics of Chemically Deposited Cadmium Sulfide Thin Films

    Science.gov (United States)

    Kakhaki, Z. Makhdoumi; Youzbashi, A.; Sangpour, P.; Kazemzadeh, A.; Naderi, N.; Bazargan, A. M.

    2016-02-01

    Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH2)2) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv-visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20nm to 30nm by the increase of concentration of NH4NO3 from 0.5M to 2.5M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25-2.4eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400nm and 500nm which are attributed to violet and band-to-band emissions, respectively.

  14. Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Seung Wook [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Agawane, G.L.; Gang, Myeng Gil [Photonics Technology Research Institute, Department of Materials Science Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Moholkar, A.V. [Department of Physics, Shivaji University, Kolhapur 416-004 (India); Moon, Jong-Ha [Photonics Technology Research Institute, Department of Materials Science Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Kim, Jin Hyeok, E-mail: jinhyeok@chonnam.ac.kr [Photonics Technology Research Institute, Department of Materials Science Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Lee, Jeong Yong, E-mail: j.y.lee@kaist.ac.kr [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)

    2012-06-15

    Highlights: Black-Right-Pointing-Pointer Thick ZnS thin films were successfully prepared by chemical bath deposition in a basic medium using less toxic complexing agents. Black-Right-Pointing-Pointer Effect of different complexing agents such as no complexing agent, Na{sub 3}-citrate and a mixture of Na{sub 3}-citrate and EDTA on the properties of ZnS thin films was investigated. Black-Right-Pointing-Pointer ZnS thin film deposited using two complexing agent showed the outstanding characteristics as compared to those using no and one complexing agent. - Abstract: Zinc sulfide (ZnS) thin films were prepared on glass substrates by a chemical bath deposition technique using aqueous zinc acetate and thiourea solutions in a basic medium (pH {approx} 10) at 80 Degree-Sign C. The effects of different complexing agents, such as a non-complexing agent, Na{sub 3}-citrate, and a mixture of Na{sub 3}-citrate and ethylenediamine tetra-acetate (EDTA), on the structural, chemical, morphological, optical, and electrical properties of ZnS thin films were investigated. X-ray diffraction pattern showed that the ZnS thin film deposited without any complexing agent was grown on an amorphous phase. However, the ZnS thin films deposited with one or two complexing agents showed a polycrystalline hexagonal structure. No secondary phase (ZnO) was observed. X-ray photoelectron spectroscopy showed that all ZnS thin films exhibited both Zn-S and Zn-OH bindings. Field emission scanning electron microscopy (FE-SEM) images showed that ZnS thin films deposited with complexing agents had thicker thicknesses than that deposited without a complexing agent. The electrical resistivity of ZnS thin films was over 10{sup 5} {Omega} cm regardless of complexing agents. The average transmittance of the ZnS thin films deposited without a complexing agent, those with Na{sub 3}-citrate, and those with a mixture of Na{sub 3}-citrate and EDTA was approximately 85%, 65%, and 70%, respectively, while the band gap

  15. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition

    OpenAIRE

    Ponja, S. D.; Sehmi, S. K.; Allan, E.; MacRobert, A. J.; Parkin, I. P.; Carmalt, C. J.

    2015-01-01

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activit...

  16. TiOxNy coatings grown by atmospheric pressure metal organic chemical vapor deposition

    OpenAIRE

    Maury, Francis; Duminica, Florin-Daniel

    2010-01-01

    International audience; Titanium oxynitride coatings were deposited on various substrates by an original atmospheric pressure metal organic chemical vapor deposition (MOCVD) process using titanium tetra-iso-propoxide as titanium and oxygen precursors and hydrazine as a nitrogen source. The films composition was monitored by controlling the N2H4 mole fraction in the initial reactive gas phase. The variation of the N content in the films results in significant changes in morphological, structur...

  17. Electrochemical studies of nickel deposition from aqueous solution in super-gravity field

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The effect of super-gravity on electrochemical deposition of nickel from aqueous solution was studied. The SEM pictures show that the microstructure of nickel film deposited under the super-gravity condition is finer and more uniform compared with that obtained in normal gravity condition, and the crystal grains diminish with the increase of super-gravity coefficient. The XRD patterns indicate that the ar-rangement of crystalline grains of nickel film deposited under the super-gravity field is more regular, and the crystalline grain sizes decrease with the increase of super-gravity coefficient. Toughness, tensile stress and hardness of the nickel film are markedly raised with the increase of super-gravity coefficient, and hydrogen content in the nickel film decreases with the increase of super-gravity coefficient. From the polarization curves of hydrogen evolution reaction under the su-per-gravity condition, a significant reduction of over-potential on electrode was found when current density increased. The process of hydrogen evolution reaction was enhanced under the super-gravity condition. The electro-deposition rate, the microstructure and properties of deposited nickel film under super-gravity condi-tion were still affected by the relative orientation between inertia force and depos-iting surface. It is favorable to gain the nickel film with better mechanic properties when inertia force orientates vertically towards depositing surface.

  18. Electrochemical studies of nickel deposition from aqueous solution in super-gravity field

    Institute of Scientific and Technical Information of China (English)

    GUO ZhanCheng; GONG YingPeng; LU WeiChang

    2007-01-01

    The effect of super-gravity on electrochemical deposition of nickel from aqueous solution was studied. The SEM pictures show that the microstructure of nickel film deposited under the super-gravity condition is finer and more uniform compared with that obtained in normal gravity condition, and the crystal grains diminish with the increase of super-gravity coefficient. The XRD patterns indicate that the arrangement of crystalline grains of nickel film deposited under the super-gravity field is more regular, and the crystalline grain sizes decrease with the increase of super-gravity coefficient. Toughness, tensile stress and hardness of the nickel film are markedly raised with the increase of super-gravity coefficient, and hydrogen content in the nickel film decreases with the increase of super-gravity coefficient. From the polarization curves of hydrogen evolution reaction under the super-gravity condition, a significant reduction of over-potential on electrode was found when current density increased. The process of hydrogen evolution reaction was enhanced under the super-gravity condition. The electro-deposition rate, the microstructure and properties of deposited nickel film under super-gravity condition were still affected by the relative orientation between inertia force and depositing surface. It is favorable to gain the nickel film with better mechanic properties when inertia force orientates vertically towards depositing surface.

  19. Nucleation and growth of copper phthalocyanine aggregates deposited from solution on planar surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ghani, Fatemeh [Department of Theory & Bio-Systems, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1 Golm, 14476 Potsdam (Germany); Gojzewski, Hubert, E-mail: hubert.gojzewski@put.poznan.pl [Department of Theory & Bio-Systems, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1 Golm, 14476 Potsdam (Germany); Institute of Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznan (Poland); Riegler, Hans [Department of Theory & Bio-Systems, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1 Golm, 14476 Potsdam (Germany)

    2015-10-01

    Graphical abstract: - Highlights: • Copper phthalocyanine deposited on planar surfaces by 3 solution process methods. • Aggregate morphology examined for coverage extending over 3 orders of magnitude. • Morphologies vary from small individual domains to mesh-like multilayers. • Nucleation and growth model explains the observed deposit morphologies. - Abstract: Copper phthalocyanine (CuPc) dissolved in trifluoroacetic acid (TFA) is deposited on solid SiO{sub 2} surfaces by solvent evaporation. The deposited CuPc aggregates are investigated by atomic force microscopy (AFM). The CuPc deposits were prepared by spin casting, dip coating, and spray deposition. Depending on the amount of deposited CuPc the aggregate morphology ranges from small individual domains to mesh-like multilayers. Each domain/layer consists of many parallel stacks of CuPc molecules with the square, plate-like molecules piled face-wise within each stack. The parallel stacks are attached sideways (i.e., edgewise attachment molecularly) to the substrate forming “nanoribbons” with uniform thickness of about 1 nm and varying width. The thickness reflects the length of a molecular edge, the width the number of stacks. A nucleation and growth model is presented that explains the observed aggregate and multilayer morphologies as result of the combination of nucleation, transport processes and a consequence of the anisotropic intermolecular interactions due to the shape of the CuPc molecule.

  20. New chemical evolution analytical solutions including environment effects

    CERN Document Server

    Spitoni, E

    2015-01-01

    In the last years, more and more interest has been devoted to analytical solutions, including inflow and outflow, to study the metallicity enrichment in galaxies. In this framework, we assume a star formation rate which follows a linear Schmidt law, and we present new analytical solutions for the evolution of the metallicity (Z) in galaxies. In particular, we take into account environmental effects including primordial and enriched gas infall, outflow, different star formation efficiencies, and galactic fountains. The enriched infall is included to take into account galaxy-galaxy interactions. Our main results can be summarized as: i) when a linear Schmidt law of star formation is assumed, the resulting time evolution of the metallicity Z is the same either for a closed-box model or for an outflow model. ii) The mass-metallicity relation for galaxies which suffer a chemically enriched infall, originating from another evolved galaxy with no pre-enriched gas, is shifted down in parallel at lower Z values, if co...

  1. Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias

    Science.gov (United States)

    Zhang, Lei; Shen, Honglie; You, Jiayi

    2013-08-01

    We have investigated the effect of negative substrate bias on microcrystalline silicon films deposited on glass and stainless steel by hot-wire chemical vapor deposition (HWCVD) to gain insight into the effect of negative substrate bias on crystallization. Structural characterization of the silicon films was performed by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. It was found that the crystallinity of the films is obviously improved by applying the substrate bias, especially for films on stainless steel. At hot-wire temperature of 1800°C and negative substrate bias of -800 V, grain size as large as 200 nm was obtained on stainless-steel substrate with crystalline fraction 9% higher than that of films deposited on glass and 15% higher than that of films deposited without substrate bias. It is deduced that the improvement of the crystallinity is mainly related to the accelerated electrons emitted from the hot wires. The differences in this improvement between different substrates are caused by the different electrical potential of the substrates. A solar cell fabricated by HWCVD with -800 V substrate bias is demonstrated, showing an obviously higher conversion efficiency than that without substrate bias.

  2. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ozaydin-Ince, Gozde, E-mail: gozdeince@sabanciuniv.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Matin, Asif, E-mail: amatin@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Khan, Zafarullah, E-mail: zukhan@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Zaidi, S.M. Javaid, E-mail: zaidismj@kfupm.edu.sa [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gleason, Karen K., E-mail: kkgleasn@mit.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2013-07-31

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling.

  3. Adherent and Conformal Zn(S,O,OH) Thin Films by Rapid Chemical Bath Deposition with Hexamethylenetetramine Additive.

    Science.gov (United States)

    Opasanont, Borirak; Van, Khoa T; Kuba, Austin G; Choudhury, Kaushik Roy; Baxter, Jason B

    2015-06-03

    ZnS is a wide band gap semiconductor whose many applications, such as photovoltaic buffer layers, require uniform and continuous films down to several nanometers thick. Chemical bath deposition (CBD) is a simple, low-cost, and scalable technique to deposit such inorganic films. However, previous attempts at CBD of ZnS have often resulted in nodular noncontinuous films, slow growth rates at low pH, and high ratio of oxygen impurities at high pH. In this work, ZnS thin films were grown by adding hexamethylenetetramine (HMTA) to a conventional recipe that uses zinc sulfate, nitrilotriacetic acid trisodium salt, and thioacetamide. Dynamic bath characterization showed that HMTA helps the bath to maintain near-neutral pH and also acts as a catalyst, which leads to fast nucleation and deposition rates, continuous films, and less oxygen impurities in the films. Films deposited on glass from HMTA-containing bath were uniform, continuous, and 90 nm thick after 1 h, as opposed to films grown without HMTA that were ∼3 times thinner and more nodular. On Cu2(Zn,Sn)Se4, films grown with HMTA were continuous within 10 min. The films have comparatively few oxygen impurities, with S/(S+O) atomic ratio of 88%, and high optical transmission of 98% at 360 nm. The Zn(S,O,OH) films exhibit excellent adhesion to glass and high resistivity, which make them ideal nucleation layers for other metal sulfides. Their promise as a nucleation layer was demonstrated with the deposition of thin, continuous Sb2S3 overlayers. This novel HMTA chemistry enables rapid deposition of Zn(S,O,OH) thin films to serve as a nucleation layer, a photovoltaic buffer layer, or an extremely thin continuous coating for thin film applications. HMTA may also be applied in a similar manner for solution deposition of other metal chalcogenide and oxide thin films with superior properties.

  4. The Physico—Chemical Conditions for Mobilization of Gold in Mobin Gold Deposit,Southwest Hunan,China

    Institute of Scientific and Technical Information of China (English)

    谷俐; 杨华; 等

    2002-01-01

    Experiments on water-rock interaction were carried out on wall-rock samples fromtheMobin gold deposit,Southwest Hunan,China ,with the aim of determining the optimum physical and chemical conditions for the mobilization of gold in solution.Results indicate that gold is most easily mobilized from the wall rock-tuffaceous slate of the Mobin Deposit.Mobi-lization is optimized if fluids are neutral to slightly alkaline and contain both chlorine and sul-phur ions at the concentration and composition of about[0.25M(NH4)2+1M NaCl].The amount of gold leached from the tuffaceous slate increases with temperature although the effect decreases above about 200℃.

  5. Hot-Wire Chemical Vapor Deposition of Few-Layer Graphene on Copper Substrates

    Science.gov (United States)

    Soler, Víctor-Manuel Freire; Badia-Canal, Jordi; Roca, Carles Corbella; Miralles, Esther Pascual; Serra, Enric Bertran; Bella, José-Luís Andújar

    2013-01-01

    Chemical vapor deposition (CVD) of graphene on copper is an efficient technology for producing high-quality graphene for large areas. The objective of this work is to deposit graphene/few-layer graphene (FLG) using different types of copper substrate by a new hot-wire CVD process. We carried out the processes at temperatures below 1000 °C with acetylene (C2H2) as a precursor gas. After a general characterization of the samples, the results mostly indicate the formation of FLG on copper samples by this method. Nevertheless, the presence of pure, crystalline, and sufficiently flat surfaces is needed for depositing high-quality graphene layers.

  6. LASER-INDUCED DECOMPOSITION OF METAL CARBONYLS FOR CHEMICAL VAPOR DEPOSITION OF MICROSTRUCTURES

    OpenAIRE

    1989-01-01

    Tungsten and nickel carbonyls were used to produce metal microstructures by laser-induced chemical vapor deposition (CVD) on various substrates. The deposition rate of microstructures produced by thermodecomposition of W(CO)6 on Si substrates heated with a cw Ar+ laser beam was relatively low (10 to 30 nm/s) even at high temperatures (above 900°C). Ni microstructures were deposited on quartz substrates irradiated with a CO2 laser beam. Relatively high laser powers were needed to heat the Ni s...

  7. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    NI Jie; LI Zhengcao; ZHANG Zhengjun

    2007-01-01

    In this paper,we report a simple approach to synthesize silicon carbide(SiC)nanowires by solid phase source chemical vapor deposition(CVD) at relatively low temperatures.3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates,and the nanowires are 20-80 am in diameter and several μm in length,with a growth direction of[200].The growth of the nanowires agrees well on vapor-liquid-solid (VLS)process and the film deposited on the substrates plays an important role in the formation of nanowires.

  8. Regular growth combined with lateral etching in diamond deposited over silicon substrate by using hot filament chemical vapor deposition technique

    Science.gov (United States)

    Ali, M.; Ürgen, M.

    2013-05-01

    Hot filament chemical vapor deposition has proved to be an attractive method for growing diamond films with good quality and higher growth rate. Diamond films were produced at deposition parameters under which, it is possible to have regular growth combined with lateral etching (RGCLE). Fracture cross-section SEM images showed that RGCLE initiated over polycrystalline diamond film and proceeded by the growth of consecutive steps in each crystallite, which terminated with square/rectangle shaped facets. All the diamond films exhibit RGCLE but with different type of growth behavior. Present work discusses the cyclic formation of the steps in diamond crystallites and RGCLE modes. RGCLE in diamond film may find important applications where heat absorption and dissipation are key issues.

  9. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brunon, Celine [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Chadeau, Elise; Oulahal, Nadia [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Grossiord, Carol [Science et Surface, 64, Chemin des Mouilles, F-69130 Ecully (France); Dubost, Laurent [HEF, ZI SUD, Rue Benoit Fourneyron, F-42166 Andrezieux Boutheon (France); Bessueille, Francois [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Simon, Farida [TDV Industrie, 43 Rue du Bas des Bois, BP 121, F-53012 Laval Cedex (France); Degraeve, Pascal [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Leonard, Didier, E-mail: didier.leonard@univ-lyon1.fr [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France)

    2011-07-01

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of {approx} 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  10. Nano sized bismuth oxy chloride by metal organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jagdale, Pravin, E-mail: pravin.jagdale@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy); Castellino, Micaela [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Marrec, Françoise [Laboratory of Condensed Matter Physics, University of Picardie Jules Verne (UPJV), Amiens 80039 (France); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexicom (UNAM), Mexico D.F. 04510 (Mexico); Tagliaferro, Alberto [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy)

    2014-06-01

    Metal organic chemical vapour deposition (MOCVD) method was used to prepare thin films of bismuth based nano particles starting from bismuth salts. Nano sized bismuth oxy chloride (BiOCl) crystals were synthesized from solution containing bismuth chloride (BiCl{sub 3}) in acetone (CH{sub 3}-CO-CH{sub 3}). Self-assembly of nano sized BiOCl crystals were observed on the surface of silicon, fused silica, copper, carbon nanotubes and aluminium substrates. Various synthesis parameters and their significant impact onto the formation of self-assembled nano-crystalline BiOCl were investigated. BiOCl nano particles were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and Micro-Raman spectroscopy. These analyses confirm that bismuth nanometer-sized crystal structures showing a single tetragonal phase were indeed bismuth oxy chloride (BiOCl) square platelets 18–250 nm thick and a few micrometres wide.

  11. Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

    Science.gov (United States)

    Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

    2013-08-01

    Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments.

  12. Electroless Deposited Gold Nanoparticles on Glass Plates as Sensors for Measuring the Dielectric Constant of Solutions

    Directory of Open Access Journals (Sweden)

    Y. Kobayashi

    2013-01-01

    Full Text Available This work describes a method for the deposition of Au nanoparticles on glass plates (Au-glass. An electroless metal plating technique was extended to the Au nanoparticle deposition. The technique consisted of three steps that took place on the glass plate: (1 adsorption of Sn2+ ions, (2 deposition of metallic Ag nuclei generated by reducing Ag+ ions with Sn2+ ions on the Sn-adsorbed sites, and (3 deposition of Au nanoparticles by reducing Au+ ions on the Ag surface. TEM observation revealed that metallic Au nanoparticles with a size of  nm were formed on the glass surface. A surface plasmon resonance absorption peak was observed, and its peak wavelength redshifted by immersing the Au-glass into a solution with a large dielectric constant. The redshift corresponded qualitatively to the calculation by the Mie theory accompanying the Drude expression, which was based on the change of the dielectric constant of the solution. The obtained results indicated that the Au-glass functioned as a sensor for measuring the dielectric constant of the solution.

  13. Exact Solutions of Chemically Reactive Solute Distribution in MHD Boundary Layer Flow over a Shrinking Surface

    Institute of Scientific and Technical Information of China (English)

    Chandaneswar Midya

    2012-01-01

    An analytical study of the distribution of a reactant solute undergoing a first-order chemical reaction in the boundary layer flow of an electrically conducting incompressible Buid over a linearly shrinking surface is presented. The Row is permeated by an externally applied magnetic Geld normal to the plane of the flow. The equations governing the Row and concentration Reid are reduced into a set of nonlinear ordinary differential equations using similarity variables. Closed form exact solutions of the reduced concentration equation are obtained for both prescribed power-law surface concentration (PSC) and power-law wall mass flux (PMF) as boundary conditions. The study reveals that the concentration over a shrinking sheet is signiRcantly different from that of a stretching surface. It s found that te solute boundary layer thickness is enhanced with the increasing values of the Schmidt number and the power-law index parameter, but decreases with enhanced vaJues of magnetic and reaction rate parameters for the PSC case. For the PMF case, the solute boundary layer thickness decreases with the increase of the Schmidt number, magnetic and reaction rate parameter for power-law index parameter n = 0. Negative solute boundary layer thickness is observed for the PMF case when n = 1 and 2, and these facts may not be realized in real-world applications.%An analytical study of the distribution of a reactant solute undergoing a first-order chemical reaction in the boundary layer flow of an electrically conducting incompressible fluid over a linearly shrinking surface is presented.The flow is permeated by an externally applied magnetic field normal to the plane of the flow.The equations governing the flow and concentration field are reduced into a set of nonlinear ordinary differential equations using similarity variables.Closed form exact solutions of the reduced concentration equation are obtained for both prescribed power-law surface concentration (PSC) and power-law wall

  14. Copper selenide thin films by chemical bath deposition

    Science.gov (United States)

    García, V. M.; Nair, P. K.; Nair, M. T. S.

    1999-05-01

    We report the structural, optical, and electrical properties of thin films (0.05 to 0.25 μm) of copper selenide obtained from chemical baths using sodium selenosulfate or N,N-dimethylselenourea as a source of selenide ions. X-ray diffraction (XRD) studies on the films obtained from baths using sodium selenosulfate suggest a cubic structure as in berzelianite, Cu 2- xSe with x=0.15. Annealing the films at 400°C in nitrogen leads to a partial conversion of the film to Cu 2Se. In the case of films obtained from the baths containing dimethylselenourea, the XRD patterns match that of klockmannite, CuSe. Annealing these films in nitrogen at 400°C results in loss of selenium, and consequently a composition rich in copper, similar to Cu 2- xSe, is reached. Optical absorption in the films result from free carrier absorption in the near infrared region with absorption coefficient of ˜10 5 cm -1. Band-to-band transitions which gives rise to the optical absorption in the visible-ultraviolet region may be interpreted in terms of direct allowed transitions with band gap in the 2.1-2.3 eV range and indirect allowed transitions with band gap 1.2-1.4 eV. All the films, as prepared and annealed, show p-type conductivity, in the range of (1-5)×10 3 Ω -1 cm -1. This results in high near infrared reflectance, of 30-80%.

  15. Stability increase of fuel clad with zirconium oxynitride thin film by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jee, Seung Hyun [Department of Materials Science and Engineering, Yonsei University, 134 Sinchon Dong, Seoul 120-749 (Korea, Republic of); Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 275 Wilmore Labs, AL 36849-5341 (United States); Kim, Jun Hwan; Baek, Jong Hyuk [Recycled Fuel Development Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon, 305-600 (Korea, Republic of); Kim, Dong-Joo [Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 275 Wilmore Labs, AL 36849-5341 (United States); Kang, Seong Sik [Regulatory Research Division, Korea Institute of Nuclear Safety, 19, Guseong-Dong, Yuseong-Gu, Daejeon, 305-338 (Korea, Republic of); Yoon, Young Soo, E-mail: yoonys@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 134 Sinchon Dong, Seoul 120-749 (Korea, Republic of)

    2012-06-01

    A zirconium oxynitride (ZON) thin film was deposited onto HT9 steel as a cladding material by a metalorganic chemical vapor deposition (MOCVD) in order to prevent a fuel-clad chemical interaction (FCCI) between a U-10 wt% Zr metal fuel and a clad material. X-ray diffraction spectrums indicated that the mixture of structures of zirconium nitride, oxide and carbide in the MOCVD grown ZON thin films. Also, typical equiaxial grain structures were found in plane and cross sectional images of the as-deposited ZON thin films with a thickness range of 250-500 nm. A depth profile using auger electron microscopy revealed that carbon and oxygen atoms were decreased in the ZON thin film deposited with hydrogen gas flow. Diffusion couple tests at 800 Degree-Sign C for 25 hours showed that the as-deposited ZON thin films had low carbon and oxygen content, confirmed by the Energy Dispersive X-ray Spectroscopy, which showed a barrier behavior for FCCI between the metal fuel and the clad. This result suggested that ZON thin film cladding by MOCVD, even with the thickness below the micro-meter level, has a high possibility as an effective FCCI barrier. - Highlights: Black-Right-Pointing-Pointer Zirconium oxynitride (ZON) deposited by metal organic chemical vapor deposition. Black-Right-Pointing-Pointer Prevention of fuel cladding chemical interaction (FCCI) investigated. Black-Right-Pointing-Pointer Interfusion reduced by between metal fuel (U-10 wt% Zr) and a HT9 cladding material. Black-Right-Pointing-Pointer Hydrogenation of the ZON during growth improved the FCCI barrier performance.

  16. Chemical vapor deposition of ceramic coatings on metals and ceramic fibers

    Science.gov (United States)

    Nable, Jun Co

    2005-07-01

    The research presented in this study consists of two major parts. The first part is about the development of ceramic coatings on metals by chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD). Ceramics such as Al2O3 and Cr2O3, are used as protective coatings for materials used at elevated temperatures (>700°C). These metal oxides either exhibit oxidation resistance or have been used as environmental bond coats. Conventional methods of coating by chemical vapor deposition requires deposition temperatures of >950°C which could damage the substrate material during the coating process. Lower deposition temperatures (400 to 600°C) by MOCVD of these metal oxides were successful on Ni metal substrates. Surface modification such as pre-oxidation and etching were also investigated. In addition, a novel approach for the CVD of TiN on metals was developed. This new approach utilizes ambient pressure conditions which lead to deposition temperatures of 800°C or lower compared to conventional CVD of TiN at 1000°C. Titanium nitride can be used as an abrasive and wear coating on cutting and grinding tools. This nitride can also serve as a diffusion coating in metals. The second major part of this research involves the synthesis of interfacial coatings on ceramic reinforcing fibers for ceramic matrix composites. Aluminum and chromium oxides were deposited onto SiC, and Al2O3-SiO 2 fibers by MOCVD. The effects of the interface coatings on the tensile strength of ceramic fibers are also discussed. New duplex interface coatings consisting of BN or TiN together with Al2O3 or ZrO 2 were also successfully deposited and evaluated on SiC fibers.

  17. Effects of Thermal Annealing on the Optical Properties of Titanium Oxide Thin Films Prepared by Chemical Bath Deposition Technique

    Directory of Open Access Journals (Sweden)

    H.U. Igwe

    2010-08-01

    Full Text Available A titanium oxide thin film was prepared by chemical bath deposition technique, deposited on glass substrates using TiO2 and NaOH solution with triethanolamine (TEA as the complexing agent. The films w ere subjected to post deposition annealing under various temperatures, 100, 150, 200, 300 and 399ºC. The thermal treatment streamlined the properties of the oxide films. The films are transparent in the entire regions of the electromagnetic spectrum, firmly adhered to the substrate and resistant to chemicals. The transmittance is between 20 and 95% while the reflectance is between 0.95 and 1%. The band gaps obtained under various thermal treatments are between 2.50 and 3.0 ev. The refractive index is between 1.52 and 2.55. The thickness achieved is in the range of 0.12-0.14 :m.These properties of the oxide film make it suitable for application in solar cells: Liquid and solid dye-sensitized photoelectrochemical solar cells, photo induced water splitting, dye synthesized solar cells, environmental purifications, gas sensors, display devices, batteries, as well as, solar cells with an organic or inorganic extremely thin absorber. These thin films are also of interest for the photooxidation of water, photocatalysis, electro chromic devices and other uses.

  18. Silver deposition on stainless steel container surfaces in contact with disinfectant silver aqueous solutions

    Science.gov (United States)

    Petala, M.; Tsiridis, V.; Mintsouli, I.; Pliatsikas, N.; Spanos, Th.; Rebeyre, P.; Darakas, E.; Patsalas, P.; Vourlias, G.; Kostoglou, M.; Sotiropoulos, S.; Karapantsios, Th.

    2017-02-01

    Silver is the preservative used on the Russian segment of the International Space Station (ISS) to prevent microbial proliferation within potable water supplies. Yet, in the frame of the European Automated Transfer Vehicle (ATV) missions to ISS, silver depletion from water has been detected during ground transportation of this water to launch site, thereby indicating a degradation of water quality. This study investigates the silver loss from water when in contact with stainless steel surfaces. Experiments are conducted with several types of stainless steel surfaces being exposed to water containing 10 or 0.5 mg/L silver ions. Results show that silver deposits on stainless steel surfaces even when a passivation layer protects the metallic surface. The highest protection to silver deposition is offered by acid passivated and electropolished SS 316L. SEM and XPS experiments were carried out at several locations of the sample area that was in contact with the Ag solution and found similar morphological (SEM) and compositional (sputter-etch XPS) results. The results reveal that silver deposits uniformly across the wetted surface to a thickness larger than 3 nm. Moreover, evidence is provided that silver deposits in its metallic form on all stainless steel surfaces, in line with a galvanic deposition mechanism. Combination of ICP-MS and XPS results suggests a mechanism for Ag deposition/reduction with simultaneous substrate oxidation resulting in oxide growth at the exposed stainless steel surface.

  19. The Unusual Colour of Copper Deposited on a Graphite Electrode in an Aqueous Solution of CuSO[subscript 4

    Science.gov (United States)

    Petrusevski, Vladimir M.; Stojanovska, Marina

    2010-01-01

    The colour of the copper layer deposited on a graphite electrode during electrolysis of an aqueous solution of copper(II) sulfate looks whitish-grey when inspected in situ. Taking the electrode out of the solution reveals the familiar orange-red colour of deposited copper. The explanation is found in terms of the almost ideal complementary colours…

  20. Effect of Thermal Annealing on the Band GAP and Optical Properties of Chemical Bath Deposited ZnSe Thin Films

    Science.gov (United States)

    Ezema, F. I.; Ekwealor, A. B. C.; Osuji, R. U.

    2006-05-01

    Zinc selenide (ZnSe) thin films were deposited on glass substrate using the chemical bath deposition method at room temperature from aqueous solutions of zinc sulphate and sodium selenosulfate in which sodium hydroxide was employed as complexing agents. The `as-deposited' ZnSe thin films are red in color and annealed in oven at 473 K for 1 hour and on a hot plate in open air at 333 K for 5 minutes, affecting the morphological and optical properties. Optical properties such as absorption coefficient a and extinction coefficient k, were determined using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. The films have transmittance in VIS-NIR regions that range between 26 and 87%. From absorbance and transmittance spectra, the band gap energy determined ranged between 1.60 eV and 1.75 for the `as deposited' samples, and the annealed samples exhibited a band gap shift of 0.15 eV. The high transmittance of the films together with its large band gap made them good materials for selective coatings for solar cells.

  1. Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    陆敏; 常昕; 黎子兰; 杨志坚; 张国义; 章蓓

    2003-01-01

    High quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and threading dislocations in GaN films is studied by a scanning electron microscope (SEM) and a transmission-electron microscope (TEM). The SEM images of GaN films, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3) and molten KOH exhibit notably different, etching pit densities of 5 × 108/cm2 and 4 × 107/cm2, respectively, which probably indicate that more kinds of, etching pits were revealed when, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3). Cross section TEM of GaN films with different g vectors showed the portions of different threading dislocations. Theoretical calculation indicates that the lattice and thermal expansion coefficient mismatch may be the main origins of pure edge threading dislocations.

  2. In situ X-ray diffraction based investigation of crystallization in solution deposited PZT thin films

    Science.gov (United States)

    Nittala, Krishna

    Solution deposited PZT based thin films have potential applications in embedded decoupling capacitors and pulse discharge capacitors. During solution deposition, precursor solution is deposited onto a substrate to obtain an amorphous film. The film is then crystallized by heating it at a high temperature (˜600 - 700°C). Conditions during the crystallization anneal such as precursor stoichiometry in solution, heating rate and adhesion layer in the substrate are known to influence phase and texture evolution in these films. However, a mechanistic understanding of the changes taking place in these thin films during crystallization is lacking. A better understanding of the crystallization processes in these thin films could enable tailoring the properties of thin films to suit specific applications. To explore the crystallization process in solution deposited PZT thin films, high temperature in situ laboratory and synchrotron X-ray diffraction based techniques were developed. Taking advantage of the high X-ray flux available at synchrotron facilities such as beamline 6-ID-B, Advanced Photon Source, Argonne National Laboratory, crystalline phases formed in the thin films during crystallization at the high heating rates (0.5 -- 60°C/s) typically used during film processing could be measured. Using a 2-D detector for these measurements allowed the simultaneous measurement of both phase and texture information during crystallization. Analytical treatment of the unconventional diffraction geometry used during the synchrotron based measurements was performed to develop methodologies for quantitative estimation of texture components. The nominal lead content in the starting solutions and the heating rate used during crystallization was observed to influence the sequence of phases formed during crystallization of the films. In films crystallized at fast heating rates, titanium segregation, probably due to diffusion of titanium from the adhesion layer, was observed. To

  3. Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Well-aligned ZnO nanowires were grown on Si substrate by chemical vapor deposition.The experimental results showed that the density of nanowires was related to the heating process and growth temperature.High-density ZnO nanowires were obtained under optimal conditions.The growth mechanism of the ZnO nanowires was presented as well.

  4. In situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper

    DEFF Research Database (Denmark)

    Kidambi, Piran R.; Blume, Raoul; Kling, Jens

    2014-01-01

    Using a combination of complementary in situ X-ray photoelectron spectroscopy and X-ray diffraction, we study the fundamental mechanisms underlying the chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) on polycrystalline Cu. The nucleation and growth of h-BN layers is found to occ...

  5. Growth Process Conditions of Tungsten Oxide Thin Films Using Hot-Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Houweling, Z.S.; Geus, J.W.; de Jong, M.; Harks, P.P.R.M.L.; van der Werf, C.H.M.; Schropp, R.E.I.

    2011-01-01

    We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was

  6. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    Science.gov (United States)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  7. Tip-based chemical vapor deposition with a scanning nano-heater

    NARCIS (Netherlands)

    Gaitas, A.

    2013-01-01

    In this preliminary effort, a moving nano-heater directs a chemical vapor deposition reaction (nano-CVD) demonstrating a tip-based nanofabrication (TBN) method. Localized nano-CVD of copper (Cu) and copper oxide (CuO) on a silicon (Si) and silicon oxide (SiO2) substrate from gasses, namely sublimate

  8. Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling

    NARCIS (Netherlands)

    Kovalgin, A.Y.; Boogaard, A.; Brunets, I.; Aarnink, A.A.I.; Wolters, R.A.M.

    2009-01-01

    Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited

  9. CHEMICALLY DEPOSITED SILVER FILM USED AS A SERS-ACTIVE OVER COATING LAYER FOR POLYMER FILM

    Institute of Scientific and Technical Information of China (English)

    Xiao-ning Liu; Gi Xue; Yun Lu; Jun Zhang; Fen-ting Li; Chen-chen Xue; Stephen Z.D. Cheng

    2001-01-01

    When colloidal silver particles were chemically deposited onto polymer film as an over-coating layer, surfaceenhanced Raman scattering (SERS) spectra could be collected for the surface analysis. SERS measurements of liquid crystal film were successfully performed without disturbing the surface morphology.

  10. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2)

    Science.gov (United States)

    2015-03-01

    photoluminescence. 15. SUBJECT TERMS Chemical vapor deposition (CVD) Nanotechnology Molybdenum disulfide (MoS2) Raman spectroscopy 16...by ANSI Std. Z39.18 UNCLASSIFIED Approved for public release; distribution is unlimited. i CONTENTS Page Introduction 1...UNCLASSIFIED Approved for public release; distribution is unlimited. 1 INTRODUCTION Recently, an explosion of interest in low-dimensional

  11. A Study on Medium Temperature Chemical Vapor Deposition (MT-CVD) Technology and Super Coating Materials

    Institute of Scientific and Technical Information of China (English)

    GAO Jian; LI Jian-ping; ZENG Xiang-cai; MA Wen-cun

    2004-01-01

    In this paper, the dense and columnar crystalline TiCN coating layers with very good bonding strength between a layer and another layer was deposited using Medium Temperature Chemical Vapor Deposition (MT-CVD) where CH3CN organic composite with C/N atomic clusters etc. was utilized at 700 ~ 900 ℃. Effect of coating processing parameters, such as coating temperature, pressure and different gas flow quantity on structures and properties of TiCN coating layers were investigated. The super coating mechanis mand structures were analyzed. The new coating processing parameters and properties of carbide inserts with super coating layers were gained by using the improved high temperature chemical vapor deposition (HTCVD) equipment and HT-CVD, in combination with MT-CVD technology.

  12. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  13. A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias.

    Science.gov (United States)

    Lisker, Marco; Marschmeyer, Steffen; Kaynak, Mehmet; Tekin, Ibrahim

    2011-09-01

    The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 microm depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

  14. Ultrasonic Spray-Assisted Solution-Based Vapor-Deposition of Aluminum Tris(8-hydroxyquinoline) Thin Films

    Science.gov (United States)

    Piao, Jinchun; Katori, Shigetaka; Ikenoue, Takumi; Fujita, Shizuo

    2011-02-01

    Aluminum tris(8-hydroxyquinoline) (Alq3) thin films were fabricated by a vapor-deposition technique from its methanol solution, that is, by the ultrasonic-assisted mist deposition technique. The application of high ultrasonic power to the Alq3-methanol mixture resulted in a stable and transparent solution. Mist particles formed by ultrasonic atomization of the solution were used as the source for vapor-deposition at the substrate temperature of 100-200 °C. Optical absorption and photoluminescence characteristics indicated the formation of Alq3 thin films. The results promise the formation of thin films of a variety of organic materials by the solution-based technique.

  15. Characteristics of zinc oxide nanorod array/titanium oxide film heterojunction prepared by aqueous solution deposition

    Science.gov (United States)

    Lee, Ming-Kwei; Hong, Min-Hsuan; Li, Bo-Wei

    2016-07-01

    The characteristics of a ZnO nanorod array/TiO2 film heterojunction were investigated. A TiO2 film was prepared on glass by aqueous solution deposition with precursors of ammonium hexafluorotitanate and boric acid at 40 °C. Then, a ZnO seed layer was prepared on a TiO2 film/glass substrate by RF sputtering. A vertically oriented ZnO nanorod array was grown on a ZnO seed layer/TiO2 film/glass substrate by aqueous solution deposition with precursors of zinc nitrate and hexamethylenetetramine (HMT) at 70 °C. After thermal annealing in N2O ambient at 300 °C, this heterojunction used as an oxygen gas sensor shows much better rise time, decay time, and on/off current ratio than as-grown and annealed ZnO nanorods.

  16. Influence of gas phase equilibria on the chemical vapor deposition of graphene.

    Science.gov (United States)

    Lewis, Amanda M; Derby, Brian; Kinloch, Ian A

    2013-04-23

    We have investigated the influence of gas phase chemistry on the chemical vapor deposition of graphene in a hot wall reactor. A new extended parameter space for graphene growth was defined through literature review and experimentation at low pressures (≥0.001 mbar). The deposited films were characterized by scanning electron microscopy, Raman spectroscopy, and dark field optical microscopy, with the latter showing promise as a rapid and nondestructive characterization technique for graphene films. The equilibrium gas compositions have been calculated across this parameter space. Correlations between the graphene films grown and prevalent species in the equilibrium gas phase revealed that deposition conditions associated with a high acetylene equilibrium concentration lead to good quality graphene deposition, and conditions that stabilize large hydrocarbon molecules in the gas phase result in films with multiple defects. The transition between lobed and hexagonal graphene islands was found to be linked to the concentration of the monatomic hydrogen radical, with low concentrations associated with hexagonal islands.

  17. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  18. Automated nanoliter solution deposition for total reflection X-ray fluorescence analysis of semiconductor samples

    Energy Technology Data Exchange (ETDEWEB)

    Sparks, Chris M. [Process Characterization Laboratory, ATDF, Austin, TX 78741 (United States)]. E-mail: chris.sparks@atdf.com; Gondran, Carolyn H. [Process Characterization Laboratory, ATDF, Austin, TX 78741 (United States); Havrilla, George J. [Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Hastings, Elizabeth P. [Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-11-15

    In this study, a BioDot BioJet dispensing system was investigated as a nanoliter sample deposition method for total reflection X-ray fluorescence (TXRF) analysis. The BioDot system was programmed to dispense arrays of 20 nL droplets of sample solution on Si wafers. Each 20 nL droplet was approximately 100 {mu}m in diameter. A 10 x 10 array (100 droplets) was deposited and dried in less than 2 min at room temperature and pressure, demonstrating the efficiency of the automated deposition method. Solutions of various concentrations of Ni and Ni in different matrices were made from stock trace element standards to investigate of the effect of the matrix on the TXRF signal. The concentrations were such that the levels of TXRF signal saturation could be examined. Arrays were deposited to demonstrate the capability of drying 100 {mu}L of vapor phase decomposition-like residue in the area of a typical TXRF detector.

  19. Sputter deposition of transition-metal carbide films — A critical review from a chemical perspective

    Energy Technology Data Exchange (ETDEWEB)

    Jansson, Ulf, E-mail: ulf.jansson@kemi.uu.se [Department of Chemistry, Ångström, Uppsala Universitet (Sweden); Lewin, Erik [Laboratory for Nanoscale Materials Science, Empa (Switzerland); Department of Chemistry, Ångström, Uppsala Universitet (Sweden)

    2013-06-01

    Thin films based on transition-metal carbides exhibit many interesting physical and chemical properties making them attractive for a variety of applications. The most widely used method to produce metal carbide films with specific properties at reduced deposition temperatures is sputter deposition. A large number of papers in this field have been published during the last decades, showing that large variations in structure and properties can be obtained. This review will summarise the literature on sputter-deposited carbide films based on chemical aspects of the various elements in the films. By considering the chemical affinities (primarily towards carbon) and structural preferences of different elements, it is possible to understand trends in structure of binary transition-metal carbides and the ternary materials based on these carbides. These trends in chemical affinity and structure will also directly affect the growth process during sputter deposition. A fundamental chemical perspective of the transition-metal carbides and their alloying elements is essential to obtain control of the material structure (from the atomic level), and thereby its properties and performance. This review covers a wide range of materials: binary transition-metal carbides and their nanocomposites with amorphous carbon; the effect of alloying carbide-based materials with a third element (mainly elements from groups 3 through 14); as well as the amorphous binary and ternary materials from these elements deposited under specific conditions or at certain compositional ranges. Furthermore, the review will also emphasise important aspects regarding materials characterisation which may affect the interpretation of data such as beam-induced crystallisation and sputter-damage during surface analysis.

  20. Optical properties of TiO{sub 2} thin films prepared by chemical spray pyrolysis from aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Ayouchi, R.; Casteleiro, C.; Schwarz, R. [Departamento de Fisica, Instituto Superior Tecnico, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Barrado, J.R.; Martin, F. [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Departamento de Fisica Aplicada I e Departamento de Ingenieria Quimica, Universidad de Malaga, 29071 Malaga (Spain)

    2010-04-15

    Titanium dioxide (TiO{sub 2}) is known to have three different kinds of polymorphous crystalline forms: rutile, anatase, and brookite. The rutile phase is always formed at higher temperatures, while the anatase phase is formed at lower temperatures and transformed into rutile phase above 800 C. Various deposition techniques have been developed for depositing TiO{sub 2} thin films, including evaporation, sputtering, chemical vapour deposition and thermal oxidation of titanium. Among them, the Chemical Spray Pyrolysis (CSP) technique has many advantages, such as good conformal coverage, the possibility of epitaxial growth and the application to large area deposition. Also, this method is low cost and it is easy to control the deposition growth parameters. In the present work, TiO{sub 2} thin films have been deposited on p-Si(001) and fused silica substrates by Chemical Spray Pyrolysis (CSP) method from aqueous solution containing titanium (IV) isopropoxide (Ti[OCH(CH{sub 3}){sub 2}]{sub 4}). As-deposited thin films show anatase polycrystalline structure, and rutile phase formed for films annealed at 750 C. SEM images have confirmed a smooth and crack-free surface with low surface roughness. X-ray photoelectron spectroscopy (XPS) combined with 4 keV Ar{sup +} depth profiling has shown that crystallized films correspond to TiO{sub 2}. Residual carbon coming from the organic precursor solution is only detected at the surface of the film. Thin films deposited on fused silica were highly transparent (more than 85%), with an indirect optical band gap of 3,43 and 3,33 eV for as-deposited and annealed films, respectively, and refractive indexes in the range between 2.01-2.29. Spectroscopic Ellipsometry (SE) also has been used to extract optical parameters. SE data fitted to triple-layer physical model revealed the same tendency to increase refractive index in annealed films. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Peng-Fei; DING Shi-Jin; ZHANG Wei; ZHANG Jian-Yun; WANGJi-Tao; WEI William Lee

    2000-01-01

    Fluorine doped silicon dioxide (SiOF) thin films have been prepared by plasma enhanced chemical vapor depo sition. The Fourier transform infrared spectrometry (FTIR) spectra of SiOF films are deliberated to reveal the structure change of SiO2 and the mechanism of dielectric constant reduction after doping fluorine. When F is doped in SiO2 films, the Si-O stretching absorption peak will have a blue-shift due to increase of the partial charge of the O atom. The FTIR spectra indicate that some Si-OH components in the thin film can be removed after doping fluorine. These changes reduce the ionic and orientational polarization, and result in the reduction in dielectric constant of the film. According to Gaussian fitting, it is found that the Si-F2 bonds will appear in the SiOF film with increase of the fluorine content. The Si-F2 structures are liable to react with water, and cause the same increase of absorbed moisture in the film.

  2. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  3. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  4. Heart rate effects of intraosseous injections using slow and fast rates of anesthetic solution deposition.

    Science.gov (United States)

    Susi, Louis; Reader, Al; Nusstein, John; Beck, Mike; Weaver, Joel; Drum, Melissa

    2008-01-01

    The authors, using a crossover design, randomly administered, in a single-blind manner, 3 primary intraosseous injections to 61 subjects using: the Wand local anesthetic system at a deposition rate of 45 seconds (fast injection); the Wand local anesthetic system at a deposition rate of 4 minutes and 45 seconds (slow injection); a conventional syringe injection at a deposition rate of 4 minutes and 45 seconds (slow injection), in 3 separate appointments spaced at least 3 weeks apart. A pulse oximeter measured heart rate (pulse). The results demonstrated the mean maximum heart rate was statistically higher with the fast intraosseous injection (average 21 to 28 beats/min increase) than either of the 2 slow intraosseous injections (average 10 to 12 beats/min increase). There was no statistically significant difference between the 2 slow injections. We concluded that an intraosseous injection of 1.4 mL of 2% lidocaine with 1 : 100,000 epinephrine with the Wand at a 45-second rate of anesthetic deposition resulted in a significantly higher heart rate when compared with a 4-minute and 45-second anesthetic solution deposition using either the Wand or traditional syringe.

  5. Solution-deposited Li4Ti5O12 thin films as anode for lithium ion battery

    Institute of Scientific and Technical Information of China (English)

    WU Xian-ming; XIAO Zhuo-bing; MA Ming-you; CHEN Shang; HE Ze-qiang; LIU Jian-ben

    2006-01-01

    The technique of solution deposition was employed to prepare Li4Ti5O12 thin film using lithium acetate and TiO(C4H9)4 as starting materials. The structural and electrochemical properties of the thin films were studied by X-ray diffraction, cyclic voltammetry, galvanostatic charge-discharge experiments, and potential step technique. The results show that the thin film prepared by this method is of pure phase with a spinel framework structure. The capacity of the thin film annealed at 750 ℃ for 1 h is approximately 57 μA·h/(cm2·μm). The film possesses excellent cycling behavior with a 0.08% capacity loss per cycle after being cycled 50 times. Potential step technique shows that the average chemical diffusion coefficient of lithium ion in the thin film is approximately 4.5×10-11 cm2/s.

  6. The influence of methanol addition during the film growth of SnO 2 by atmospheric pressure chemical vapor deposition

    NARCIS (Netherlands)

    Volintiru, I.; Graaf, A. de; Deelen, J. van; Poodt, P.W.G.

    2011-01-01

    Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor from a water/tin tetrachloride mixture. By adding methanol during the deposition process the film electrical properties change significantly: ten times more conductive SnO 2 films are o

  7. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista-UNESP, Avenida Tres de Marco, 511, Alto da Boa Vista, 18087-180, Soracaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Rouxinol, Francisco P.M.; Gelamo, Rogerio V. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Trasferetti, B. Claudio [Present address: Superintendencia Regional da Policia Federal em Sao Paulo, Setor Tecnico-Cientifico, Rua Hugo d' Antola 95/10o Andar, Lapa de Baixo, 05038-090 Sao Paulo, SP (Brazil); Davanzo, C.U. [Instituto de Quimica, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Bica de Moraes, Mario A. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil)

    2008-01-15

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V{sub S}) and of the proportion of TEOS in the mixture (X{sub T}) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V{sub S} and X{sub T} are presented.

  8. Chemically deposited TiO2/CdS bilayer system for photoelectrochemical properties

    Indian Academy of Sciences (India)

    P R Deshmukh; U M Patil; K V Gurav; S B Kulkarni; C D Lokhande

    2012-12-01

    In the present investigation, TiO2, CdS and TiO2/CdS bilayer system have been deposited on the fluorine doped tin oxide (FTO) coated glass substrate by chemical methods. Nanograined TiO2 was deposited on FTO coated glass substrates by successive ionic layers adsorption and reaction (SILAR) method. Chemical bath deposition (CBD)method was employed to deposit CdS thin film on pre-deposited TiO2 film. A further study has beenmade for structural, surface morphological, optical and photoelectrochemical (PEC) properties of FTO/TiO2, FTO/CdS and FTO/TiO2/CdS bilayers system. PEC behaviour of FTO/TiO2/CdS bilayers was studied and compared with FTO/CdS single system. FTO/TiO2/CdS bilayers system showed improved performance of PEC properties over individual FTO/CdS thin films.

  9. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  10. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    Directory of Open Access Journals (Sweden)

    Florian Waltz

    2015-03-01

    Full Text Available In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps, a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step. In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  11. Synthesis of Nanocrystalline SnOx (x = 1–2 Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2011-09-01

    Full Text Available Nanocrystalline SnOx (x = 1–2 thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light.

  12. Microstructural characterization and chemical compatibility of pulsed laser deposited yttria coatings on high density graphite

    Energy Technology Data Exchange (ETDEWEB)

    Sure, Jagadeesh [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Mishra, Maneesha [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Tarini, M. [SRM University, Kattankulathur-603 203 (India); Shankar, A. Ravi; Krishna, Nanda Gopala [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Kuppusami, P. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Mallika, C. [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Mudali, U. Kamachi, E-mail: kamachi@igcar.gov.in [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India)

    2013-10-01

    Yttria coatings were deposited on high density (HD) graphite substrate by pulsed laser deposition method and subsequently annealing in vacuum at 1373 K was carried out to evaluate the thermal stability of the coatings. Yttria deposited on HD graphite samples were exposed to molten LiCl–KCl salt at 873 K for 3 h to evaluate the corrosion behavior of the coating for the purpose of pyrochemical reprocessing applications. The microstructure and the corrosion behavior of the yttria coating deposited on HD graphite in molten LiCl–KCl salt were evaluated by several characterization techniques. X-ray diffraction and Laser Raman patterns confirmed the presence of cubic phase of yttria in the coating. The surface morphology of yttria coating on HD graphite examined by scanning electron microscope and atomic force microscopy revealed the agglomeration of oxide particles and formation of clusters. After annealing at 1373 K, no appreciable grain growth of yttria particles could be observed. X-ray photoelectron spectroscopy analysis was carried out for elemental analysis before and after chemical compatibility test of the coated samples in molten LiCl–KCl salt to identify the corrosive elements present on the yttria coatings. The chemical compatibility and thermal stability of the yttria coating on HD graphite in molten LiCl–KCl salt medium have been established. - Highlights: • Y{sub 2}O{sub 3} coating was deposited on graphite by pulsed laser deposition method. • Chemical compatibility of Y{sub 2}O{sub 3} coating in LiCl–KCl salt at 873 K was studied. • Gibbs free energy change was positive for Y{sub 2}O{sub 3} reaction with Cl{sub 2}, U and UCl{sub 3}. • Y{sub 2}O{sub 3} coating exhibited better corrosion performance in molten LiCl–KCl salt.

  13. Chemical deposition of La0.7Ca0.3MnO3±δ films on ceramic substrates

    Directory of Open Access Journals (Sweden)

    Cássio Morilla-Santos

    2011-01-01

    Full Text Available In this paper, it is reported the growth of La0.7Ca0.3MnO3±δ films using a chemical solution deposition method (CSD by the spin-coating technique. Such solution was prepared through a route based on modified polymeric precursor method. Spin-coating deposition on different ceramic substrates was performed and analyzed by X-ray diffraction (XRD, scanning electron microscopy (SEM and X-ray photoelectron spectroscopy (XPS. The magnetic response of the prepared specimens was studied using a SQUID magnetometer. The obtained results indicated uniform deposition on SrTiO3 and LaAlO3 substrates with similar characteristics. Furthermore, significant differences were detected in the Mn3+/Mn4+ valence ratio and a corresponding diverse magnetic response was observed. The sample prepared on SrTiO3 and LaAlO3 presented a critical temperature around 270 K as expected.

  14. Physical properties of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ximello-Quiebras, J.N.; Contreras-Puente, G.; Aguilar-Hernandez, J. [Escuela Superior de Fisica y Matematicas-Instituto Politecnico Nacional, Edificio 9, U.P.A.L.M. 07738 DF (Mexico); Santana-Rodriguez, G.; Arias-Carbajal Readigos, A. [Facultad de Fisica IMRE, Universidad de la Habana, 10400 La Habana (Cuba)

    2004-05-01

    Cadmium sulfide films of different thicknesses were deposited by chemical bath deposition (CBD) from a bath containing cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea. The XRD patterns show that the films have a hexagonal phase with a preferential (002) orientation. The photoluminescence spectra show a defect structure, characteristics of the CdS films obtained by CBD. The electrical behavior in dark and under illumination, the optical properties and the band gap value reported in this work is in agreement with that reported in the literature.

  15. Preparation of Dispersed Platinum Nanoparticles on a Carbon Nanostructured Surface Using Supercritical Fluid Chemical Deposition

    Directory of Open Access Journals (Sweden)

    Mineo Hiramatsu

    2010-03-01

    Full Text Available We have developed a method of forming platinum (Pt nanoparticles using a metal organic chemical fluid deposition (MOCFD process employing a supercritical fluid (SCF, and have demonstrated the synthesis of dispersed Pt nanoparticles on the surfaces of carbon nanowalls (CNWs, two-dimensional carbon nanostructures, and carbon nanotubes (CNTs. By using SCF-MOCFD with supercritical carbon dioxide as a solvent of metal-organic compounds, highly dispersed Pt nanoparticles of 2 nm diameter were deposited on the entire surface of CNWs and CNTs. The SCF-MOCFD process proved to be effective for the synthesis of Pt nanoparticles on the entire surface of intricate carbon nanostructures with narrow interspaces.

  16. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  17. Studies on chemical bath deposited zinc sulphide thin films with special optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Ladar, Maria [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); ' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Popovici, Elisabeth-Jeanne [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania)]. E-mail: jennypopovici@yahoo.com; Baldea, Ioan [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); Grecu, Rodica [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Indrea, Emil [National Institute for R and D of Isotopic and Molecular Technology, Donath 71-103, 400293 Cluj-Napoca (Romania)

    2007-05-31

    Adherent and uniform zinc sulphide thin films were deposited on optical glass platelets from chemical bath containing thiourea, zinc acetate, ammonia and sodium citrate. The samples, as they were prepared were investigated by UV-vis absorption/reflection spectroscopy, fluorescence spectroscopy and X-ray diffraction. The effects of growth conditions such as reagent concentration and deposition technique (mono- and multi-layer) on optical and structural properties of the ZnS thin films have been studied. The ability of ZnS films to exhibit luminescent properties has also been investigated.

  18. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  19. Photoinitiated chemical vapor deposition of polymeric thin films using a volatile photoinitiator.

    Science.gov (United States)

    Chan, Kelvin; Gleason, Karen K

    2005-12-06

    Photoinitiated chemical vapor deposition (piCVD) is an evolutionary CVD technique for depositing polymeric thin films in one step without using any solvents. The technique requires no pre- or post-treatment and uses a volatile photoinitiator to initiate free-radical polymerization of gaseous monomers under UV irradiation. Glycidyl methacrylate (GMA) was used as a test monomer for its ability to undergo free-radical polymerization, and 2,2'-azobis(2-methylpropane) (ABMP) was used as the photoinitiator, as it is known to produce radicals when excited by photons. GMA and ABMP vapors were fed into a vacuum chamber in which film growth was observed on a substrate exposed to UV irradiation. The resulting poly(glycidyl methacrylate) (PGMA) thin films were comprised of linear chains and had high structural resemblance to conventionally polymerized PGMA, as shown by the high solubility in tetrahydrofuran and the infrared and X-ray photoelectron spectroscopy measurements. The introduction of ABMP into the vacuum chamber significantly increased growth rates. The maximum growth rate achieved was approximately 140 nm/min and represents a 7-fold enhancement over the case without ABMP. The molecular weight was found to increase with increasing monomer-to-initiator (M/I) feed ratio, and the polydispersity indexes (PDIs) of the samples were between 1.8 and 2.2, lower than the values obtained in conventional batch polymerization but in agreement with the theoretical expressions developed for low-conversion solution-phase polymerization, which are applicable to continuous processes such as piCVD. Molecular-weight distributions can be narrowed by filtering out wavelengths shorter than 300 nm, which induce branching and/or cross-linking. The strong dependence of the molecular weight on the M/I ratio, the rate enhancement due to the use of a radical photoinitiator, the good agreement between the experimental, and the theoretical PDIs provide evidence of a free-radical mechanism in pi

  20. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization.

    Science.gov (United States)

    Güzeldir, Betül; Sağlam, Mustafa

    2015-11-05

    Different chemical methods such as Successive Ionic Layer Adsorption and Reaction (SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide thin films on the glass substrates. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) spectroscopy and UV-vis spectrophotometry. The XRD and SEM studies showed that all the films exhibit polycrystalline nature and crystallinity of copper selenide thin films prepared with spray pyrolysis greater than spin coating and SILAR methods. From SEM and AFM images, it was observed copper selenide films were uniform on the glass substrates without any visible cracks or pores. The EDX spectra showed that the expected elements exist in the thin films. Optical absorption studies showed that the band gaps of copper selenide thin films were in the range 2.84-2.93 eV depending on different chemical methods. The refractive index (n), optical static and high frequency dielectric constants (ε0, ε∞) values were calculated by using the energy bandgap values for each deposition method. The obtained results from different chemical methods revealed that the spray pyrolysis technique is the best chemical deposition method to fabricate copper selenide thin films. This absolute advantage was lead to play key roles on performance and efficiency electrochromic and photovoltaic devices.

  1. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  2. Chemical vapor deposition fabrication and characterization of silica-coated carbon fiber ultramicroelectrodes.

    Science.gov (United States)

    Zhao, G; Giolando, D M; Kirchhoff, J R

    1995-08-01

    Carbon fiber disk ultramicroelectrodes (UMEs) with well-defined geometries were prepared by chemical vapor deposition techniques. Transparent silica films with thicknesses from 1 to 600 microns were deposited on the cylindrical length of 5 and 10 microns carbon fibers from a SiCl4, H2, and O2 ternary precursor system at 850-1150 degrees C or sequential deposition from Si(OEt)4 as a single source precursor at 700 degrees C followed by the SiCl4, H2, and O2 precursor system. Film thickness, film adhesion to the fiber substrate, and the overall dimensions of the silica-coated carbon fiber were studied and found to be a function of the precursor system, precursor concentrations, fiber diameter, deposition time, and fiber temperature. The silica films were found to be free of microcracks and characterized by a quality seal between the carbon fiber and the coating. As a result, the silica-coated disk UME exhibits an excellent electrochemical response without the need to use an epoxy sealant at the electrode tip. Furthermore, the deposition of hard and inert ceramic materials imparts durability to fragile carbon fibers and facilitates the handling of UMEs in microenvironments. Finally, the advantage of concentric deposition about the fibers to produce a disk UME in the center of an insulating plane was used to examine the effect of the thickness of the insulating coating on the limiting current response.

  3. Conformal encapsulation of three-dimensional, bioresorbable polymeric scaffolds using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Hawker, Morgan J; Pegalajar-Jurado, Adoracion; Fisher, Ellen R

    2014-10-21

    Bioresorbable polymers such as poly(ε-caprolactone) (PCL) have a multitude of potential biomaterial applications such as controlled-release drug delivery and regenerative tissue engineering. For such biological applications, the fabrication of porous three-dimensional bioresorbable materials with tunable surface chemistry is critical to maximize their surface-to-volume ratio, mimic the extracellular matrix, and increase drug-loading capacity. Here, two different fluorocarbon (FC) precursors (octofluoropropane (C3F8) and hexafluoropropylene oxide (HFPO)) were used to deposit FC films on PCL scaffolds using plasma-enhanced chemical vapor deposition (PECVD). These two coating systems were chosen with the intent of modifying the scaffold surfaces to be bio-nonreactive while maintaining desirable bulk properties of the scaffold. X-ray photoelectron spectroscopy showed high-CF2 content films were deposited on both the exterior and interior of PCL scaffolds and that deposition behavior is PECVD system specific. Scanning electron microscopy data confirmed that FC film deposition yielded conformal rather than blanket coatings as the porous scaffold structure was maintained after plasma treatment. Treated scaffolds seeded with human dermal fibroblasts (HDF) demonstrate that the cells do not attach after 72 h and that the scaffolds are noncytotoxic to HDF. This work demonstrates conformal FC coatings can be deposited on 3D polymeric scaffolds using PECVD to fabricate 3D bio-nonreactive materials.

  4. Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li Junsheng, E-mail: charlesljs@163.com [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha, 410073 (China); Zhang Changrui; Li Bin [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha, 410073 (China)

    2011-06-15

    Boron nitride (BN) coatings were deposited on carbon fibers by chemical vapor deposition (CVD) using borazine as single source precursor. The deposited coatings were characterized by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The effect of temperatures on growth kinetics, morphology, composition and structure of the coatings was investigated. In the low temperature range of 900 deg. C-1000 deg. C, the growth rate increased with increasing temperature complying with Arrhenius law, and an apparent active energy of 72 kJ/mol was calculated. The coating surface was smooth and compact, and the coatings uniformly deposited on individual fibers of carbon fiber bundles. The growth was controlled by surface reaction. At 1000 deg. C, the deposition rate reached a maximum (2.5 {mu}m/h). At the same time, the limiting step of the growth translated to be mass-transportation. Above 1100 deg. C, the growth rate decreased drastically due to the occurrence of gas-phase nucleation. Moreover, the coating surface became loose and rough. Composition and structure examinations revealed that stoichiometric BN coatings with turbostratic structure were obtained below 1000 deg. C, while hexagonal BN coatings were deposited above 1100 deg. C. A penetration of carbon element from the fibers to the coatings was observed.

  5. CdS/FTO thin film electrodes deposited by chemical bath deposition and by electrochemical deposition: A comparative assessment of photo-electrochemical characteristics

    Science.gov (United States)

    Zyoud, Ahed; Saa'deddin, Iyad; Khudruj, Sahar; Hawash, Zafer M.; Park, DaeHoon; Campet, Guy; Hilal, Hikmat S.

    2013-04-01

    CdS thin films have been deposited onto FTO/glass substrates by two different techniques, electrochemical deposition (ECD) and chemical bath deposition (CBD). Feasibility of using these two film types in photoelectrochemical processes has been critically investigated here. The films were comparatively characterized by a number of techniques (solid state absorption spectra, solid state photoluminescence spectra, XRD and SEM). PEC characteristics of the electrodes, including current density-voltage (J-V) plots, conversion efficiency (η), stability and fill-factor (FF) were then studied. The results show that both systems involved nano-sized CdS particles living in coagulates. The ECD was thinner and more uniform than the CBD system. The CBD films were more effective in PEC processes than the ECD counterparts. Effect of annealing on characteristics of both electrode systems has been investigated. Annealing enhanced both film characteristics, but the CBD was affected to a higher extent, and the annealed CBD film was more effective than the ECD counterpart.

  6. CalloseMeasurer: a novel software solution to measure callose deposition and recognise spreading callose patterns

    Directory of Open Access Journals (Sweden)

    Zhou Ji

    2012-12-01

    Full Text Available Abstract Background Quantification of callose deposits is a useful measure for the activities of plant immunity and pathogen growth by fluorescence imaging. For robust scoring of differences, this normally requires many technical and biological replicates and manual or automated quantification of the callose deposits. However, previously available software tools for quantifying callose deposits from bioimages were limited, making batch processing of callose image data problematic. In particular, it is challenging to perform large-scale analysis on images with high background noise and fused callose deposition signals. Results We developed CalloseMeasurer, an easy-to-use application that quantifies callose deposition, a plant immune response triggered by potentially pathogenic microbes. Additionally, by tracking identified callose deposits between multiple images, the software can recognise patterns of how a given filamentous pathogen grows in plant leaves. The software has been evaluated with typical noisy experimental images and can be automatically executed without the need for user intervention. The automated analysis is achieved by using standard image analysis functions such as image enhancement, adaptive thresholding, and object segmentation, supplemented by several novel methods which filter background noise, split fused signals, perform edge-based detection, and construct networks and skeletons for extracting pathogen growth patterns. To efficiently batch process callose images, we implemented the algorithm in C/C++ within the Acapella™ framework. Using the tool we can robustly score significant differences between different plant genotypes when activating the immune response. We also provide examples for measuring the in planta hyphal growth of filamentous pathogens. Conclusions CalloseMeasurer is a new software solution for batch-processing large image data sets to quantify callose deposition in plants. We demonstrate its high

  7. Method for Non-Invasive Determination of Chemical Properties of Aqueous Solutions

    Science.gov (United States)

    Todd, Paul W. (Inventor); Jones, Alan (Inventor); Thomas, Nathan A. (Inventor)

    2016-01-01

    A method for non-invasively determining a chemical property of an aqueous solution is provided. The method provides the steps of providing a colored solute having a light absorbance spectrum and transmitting light through the colored solute at two different wavelengths. The method further provides the steps of measuring light absorbance of the colored solute at the two different transmitted light wavelengths, and comparing the light absorbance of the colored solute at the two different wavelengths to determine a chemical property of an aqueous solution.

  8. Corrosion behaviour and bioactivity of electrophoretically deposited hydroxyapatite on titanium in physiological media (Hanks' solution)

    Science.gov (United States)

    Mohamed, S. G.; Abdeltawab, A. A.; Shoeib, M. A.

    2012-09-01

    Hydroxyapatite (HA) coatings were developed on titanium by electrophoretic deposition at various deposition potentials from 30 to 60 V and at a constant deposition time of 5 minutes using the synthetic HA (Ca10(PO4)6(OH)2,) powder in a suspension of dimethyleformamide (DMF, HCON(CH3)2). The electrochemical corrosion behavior of the HA coatings in simulated body fluid (SBF Hanks' solution) at 37 °C and pH 7.4 was investigated by means of open-circuit potential (OCP) measurement and potentiodynamic polarization tests. The OCP test showed that the values OCP for the coated samples shifted to more noble potential than for uncoated titanium, especially after addition of dispersants. The polarization test revealed that all HA coated specimens had a corrosion resistance higher than that of the substrate, especially after addition of dispersants such as polyvinyl butyral (PVB), polyethylene glycol (PEG) and triethanolamine (TEA) to the suspension. The coating morphology after polarization, characterized by scanning electron microscopy (SEM), showed penetration of electrolyte into the HA coats. Bone bioactivity of the coatings was also studied by immersion of coated specimens in Hanks' solution for 3 and 7 days. Apatite granules growth on the surface of the HA layers was observed.

  9. Solutions of the chemical kinetic equations for initially inhomogeneous mixtures.

    Science.gov (United States)

    Hilst, G. R.

    1973-01-01

    Following the recent discussions by O'Brien (1971) and Donaldson and Hilst (1972) of the effects of inhomogeneous mixing and turbulent diffusion on simple chemical reaction rates, the present report provides a more extensive analysis of when inhomogeneous mixing has a significant effect on chemical reaction rates. The analysis is then extended to the development of an approximate chemical sub-model which provides much improved predictions of chemical reaction rates over a wide range of inhomogeneities and pathological distributions of the concentrations of the reacting chemical species. In particular, the development of an approximate representation of the third-order correlations of the joint concentration fluctuations permits closure of the chemical sub-model at the level of the second-order moments of these fluctuations and the mean concentrations.

  10. Composition and structural study of solution-processed Zn(S,O,OH) thin films grown using H{sub 2}O{sub 2} based deposition route

    Energy Technology Data Exchange (ETDEWEB)

    Buffière, M., E-mail: marie.buffiere@imec.be [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); 44Solar, 14 rue Kepler, 44240 La Chapelle-sur-Erdre (France); Gautron, E. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Hildebrandt, T. [Institut de Recherche et Développement sur l' Energie Photovoltaïque (IRDEP)-UMR 7174 EDF-CNRS-ENSCP, 6 quai Watier-78401 Chatou Cedex (France); Harel, S.; Guillot-Deudon, C.; Arzel, L. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Naghavi, N. [Institut de Recherche et Développement sur l' Energie Photovoltaïque (IRDEP)-UMR 7174 EDF-CNRS-ENSCP, 6 quai Watier-78401 Chatou Cedex (France); Barreau, N. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Kessler, J. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); 44Solar, 14 rue Kepler, 44240 La Chapelle-sur-Erdre (France)

    2013-05-01

    Recent results have revealed that the low deposition time issue of chemical bath deposited (CBD) Zn(S,O,OH) buffer layer used in Cu(In,Ga)Se{sub 2} (CIGSe) solar cells could be resolved using H{sub 2}O{sub 2} as an additive in the chemical bath solution. Although the use of this additive does not hinder the electrical properties of the resulting Zn(S,O,OH)-buffered CIGSe solar cells, the impact of H{sub 2}O{sub 2} on the Zn(S,O,OH) properties remains unclear. The present contribution aims at determining the chemical composition and the microstructure of Zn(S,O,OH) film deposited by CBD using the alternative deposition bath containing the standard zinc sulfate, thiourea, ammonia but also H{sub 2}O{sub 2} additive. Both X-ray photoemission spectroscopy and energy dispersive X-ray spectroscopy analyses reveal higher sulfur content in alternatively deposited Zn(S,O,OH), since the first step growth of the layer. According to transmission electron microscopy analyses, another consequence of the higher deposition rate achieved when adding H{sub 2}O{sub 2} in the bath is the modification of the absorber/buffer interface. This could be explained by the enhancement of the cluster growth mechanism of the layer. - Highlights: ► The Zn(S,O,OH) layer composition can vary with the chemical bath process used. ► The alternative process leads to a faster incorporation of sulfur in the layer. ► No ZnS epitaxial layer has been found at absorber/alternative buffer interface. ► The use of H{sub 2}O{sub 2} enhances the cluster-by-cluster growth mechanism.

  11. Chemical characterisation of rainwater at Stromboli Island (Italy): The effect of post-depositional processes

    Science.gov (United States)

    Cangemi, Marianna; Madonia, Paolo; Favara, Rocco

    2017-04-01

    Volcanoes emit fluids and solid particles into the atmosphere that modify the chemical composition of natural precipitation. We have investigated the geochemistry of Stromboli's rainfall during the period from November 2014 to March 2016 using a network of a new type of sampler specifically designed for operations on volcanic islands. We found that most of the chemical modifications are due to processes occurring after the storage of rainwater in the sampling bottles. These processes include dissolution of volcanogenic soluble salts encrusting volcanic ash and a variable contribution of sea spray aerosol. Our data showed noticeably less scatter than has previously been achieved with a different sampling system that was more open to the atmosphere. This demonstrates the improved efficacy of the new sampler design. The data showed that post-depositional chemical alteration of rain samples dominates over processes occurring during droplet formation ad precipitation. This has important implications for the calculation of fluxes of chemicals from rainfall in volcanic regions.

  12. Chemical bath deposited rutile TiO2 compact layer toward efficient planar heterojunction perovskite solar cells

    Science.gov (United States)

    Liang, Chao; Wu, Zhenhua; Li, Pengwei; Fan, Jiajie; Zhang, Yiqiang; Shao, Guosheng

    2017-01-01

    TiO2 is a best choice of electron transport layers in perovskite solar cells, due to its high electron mobility and stability. However, traditional TiO2 processing method requires rather high annealing temperature (>500 °C), preventing it from application to flexible devices. Here, we show that TiO2 thin films can be synthesized via chemical bath deposition below 100 °C. Typically, a compact layer of rutile TiO2 is deposited onto fluorine-doped tin oxide (FTO) coated substrates, in an aqueous TiCl4 solution at 70 °C. Through the optimization of precursor concentration and ultraviolet-ozone surface modification, over 12% power conversion efficiency can be achieved for CH3NH3PbI3 based perovskite solar cells. These findings offer a potential low-temperature technical solution in using TiO2 thin film as an effective transport layer for flexible perovskite solar cells.

  13. DEPOSITION TANK CORROSION TESTING FOR ENHANCED CHEMICAL CLEANING POST OXALIC ACID DESTRUCTION

    Energy Technology Data Exchange (ETDEWEB)

    Mickalonis, J.

    2011-08-29

    An Enhanced Chemical Cleaning (ECC) process is being developed to aid in the high level waste tank closure at the Savannah River Site. The ECC process uses an advanced oxidation process (AOP) to destroy the oxalic acid that is used to remove residual sludge from a waste tank prior to closure. The AOP process treats the dissolved sludge with ozone to decompose the oxalic acid through reactions with hydroxyl radicals. The effluent from this oxalic acid decomposition is to be sent to a Type III waste tank and may be corrosive to these tanks. As part of the hazardous simulant testing that was conducted at the ECC vendor location, corrosion testing was conducted to determine the general corrosion rate for the deposition tank and to assess the susceptibility to localized corrosion, especially pitting. Both of these factors impact the calculation of hydrogen gas generation and the structural integrity of the tanks, which are considered safety class functions. The testing consisted of immersion and electrochemical testing of A537 carbon steel, the material of construction of Type III tanks, and 304L stainless steel, the material of construction for transfer piping. Tests were conducted in solutions removed from the destruction loop of the prototype ECC set up. Hazardous simulants, which were manufactured at SRNL, were used as representative sludges for F-area and H-area waste tanks. Oxalic acid concentrations of 1 and 2.5% were used to dissolve the sludge as a feed to the ECC process. Test solutions included the uninhibited effluent, as well as the effluent treated for corrosion control. The corrosion control options included mixing with an inhibited supernate and the addition of hydroxide. Evaporation of the uninhibited effluent was also tested since it may have a positive impact on reducing corrosion. All corrosion testing was conducted at 50 C. The uninhibited effluent was found to increase the corrosion rate by an order of magnitude from less than 1 mil per year (mpy

  14. FABRICATION OF DIAMOND TUBES IN BIAS-ENHANCED HOT-FILAMENT CHEMICAL VAPOR DEPOSITION SYSTEM

    Institute of Scientific and Technical Information of China (English)

    CHEN Ming; MA Yuping; XIANG Daohui; SUN Fanghong

    2007-01-01

    Deposition of diamond thin films on tungsten wire Substrate with the gas mixture of acetone and hydrogen by using bias-enhanced hol filament chemical vapor deposition (CVD) with the tantalum wires being optimized arranged is investigated. The self-supported diamond tubes are obtained by etching away the tungsten Substrates. The quality of the diamond film before and after the removal of Substrates is observed by scanning electron microscope (SEM) and Raman spectrum. The results show that the cylindrical diamond tubes with good quality and uniform thickness are obtained on tungsten wires by using bias enhanced hot filament CVD. The compressive stress in diamond film formed during the deposition is released after the Substrate etches away by mixture of H202 and NH4OH. There is no residual stress in diamond tube after Substrate removal.

  15. Characterization of chemical bath deposited buffer layers for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Dwyer, D.; Efstathiadis, H.; Haldar, P. [College of Nanoscale Science and Engineering, University at Albany - State University of New York, 257 Fuller Rd., Albany, NY 12203 (United States); Sun, R. [Angstrom Sun Technologies Inc., 33 Nagog Park, Acton, MA 01720 (United States)

    2010-10-15

    Cadmium sulfide (CdS), indium sulfide (In{sub 2}S{sub 3}) and zinc sulfide (ZnS) thin films have been deposited by chemical bath deposition (CBD) for buffer layer applications in Cu-chalcopyrite-based thin film solar cells. Films were characterized by scanning electron microscopy (SEM), UV-Vis transmission, X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXRD), and spectroscopic ellipsometry. Results indicate CdS can be deposited with low oxygen content and high light transmission over 245-1700 nm. CBD-ZnS and CBD-InS both exhibit 5-10% less light transmission than CdS in the same thickness range. In terms of light transmission and degree of impurities CdS appears to be a better buffer material than CBD-ZnS or CBD-InS. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  17. Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition

    Science.gov (United States)

    Jung, Jae-Soo; Lee, Sang-Hoon; Kim, Da-Seul; Kim, Kun-Su; Park, Soon-Won; Hwang, Nong-Moon

    2017-01-01

    The deposition behavior of silicon films by hot wire chemical vapor deposition (HWCVD) was approached by non-classical crystallization, where the building block of deposition is a nanoparticle generated in the gas phase of the reactor. The puzzling phenomenon of the formation of an amorphous incubation layer on glass could be explained by the liquid-like property of small charged nanoparticles (CNPs), which are generated in the initial stage of the HWCVD process. Using the liquid-like property of small CNPs, homo-epitaxial growth as thick as 150 nm could be successfully grown on a silicon wafer at 600 °C under the processing condition where CNPs as small as possible could be supplied steadily by a cyclic process which periodically resets the process. The size of CNPs turned out to be an important parameter in the microstructure evolution of thin films.

  18. Simultaneous growth of diamond and nanostructured graphite thin films by hot-filament chemical vapor deposition

    Science.gov (United States)

    Ali, M.; Ürgen, M.

    2012-01-01

    Diamond and graphite films on silicon wafer were simultaneously synthesized at 850 °C without any additional catalyst. The synthesis was achieved in hot-filament chemical vapor deposition reactor by changing distance among filaments in traditional gas mixture. The inter-wire distance for diamond and graphite deposition was kept 5 and 15 mm, whereas kept constant from the substrate. The Raman spectroscopic analyses show that film deposited at 5 mm is good quality diamond and at 15 mm is nanostructured graphite and respective growths confirm by scanning auger electron microscopy. The scanning electron microscope results exhibit that black soot graphite is composed of needle-like nanostructures, whereas diamond with pyramidal featured structure. Transformation of diamond into graphite mainly attributes lacking in atomic hydrogen. The present study develops new trend in the field of carbon based coatings, where single substrate incorporate dual application can be utilized.

  19. Structural and Optical Properties of CdS Thin Film Grown by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    S. Rajpal

    2013-07-01

    Full Text Available In this work we report synthesis and optical characterization of CdS thin films coated on glass substrate. The films were deposited using chemical bath deposition method. Scanning Electron microscopy shows a uniform film of CdS film at particular concentration and dipping time. The Energy Dispersive spectroscopy reveals the presence of Cd and S in the CdS film. X-Ray diffraction confirms the cubic structure of CdS deposited on glass and amorphous nature of glass. Optical and photoluminescence studies were done using UV-Visible spectroscopy and Photoluminescence spectroscopy respectively. We have determined bandgap by analyzing UV-Visible spectra results. Wettability studies were done using Optical Contact Angle, which confirms the hydrophobic nature of the CdS films.

  20. High quality antireflective ZnS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tec-Yam, S.; Rojas, J.; Rejon, V. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico); Oliva, A.I., E-mail: oliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico)

    2012-10-15

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl{sub 2}, NH{sub 4}NO{sub 3}, and CS(NH{sub 2}){sub 2} were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 Degree-Sign C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300-800 nm wavelength range, and a reflectance below 25% in the UV-Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: Black-Right-Pointing-Pointer High quality ZnS thin films were prepared by chemical bath deposition (CBD). Black-Right-Pointing-Pointer Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. Black-Right-Pointing-Pointer Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  1. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Study of planar heterojunction perovskite photovoltaic cells using compact titanium oxide by chemical bath deposition

    Science.gov (United States)

    Yamamoto, Kouhei; Kuwabara, Takayuki; Takahashi, Kohshin; Taima, Tetsuya

    2015-08-01

    Spin-coated perovskite solar cells from sol-gels result in high processing costs because of the need for high temperatures. Here, we report a low-temperature spin-coating route to fabricate planar heterojunction perovskite solar cells using chemical bath deposition of compact-TiOx layers. Comparison of the solar cell properties of compact-TiOx and compact-TiO2 layers show that the power conversion efficiency of the planar heterojunction perovskite solar cell fabricated by the low-temperature, compact-TiOx route is comparable to that of conventional TiO2. The chemical bath deposition method requires heating to 150 °C only to form amorphous compact-TiOx films compared with the 450 °C required for crystalline anatase compact-TiO2 films.

  3. Low Temperature Growth of Vertically Aligned Carbon Nanotubes via Floating Catalyst Chemical Vapor Deposition Method

    Institute of Scientific and Technical Information of China (English)

    M.R. Atiyan; D.R. Awang Biak; F. Ahmadun; I.S. Ahamad; F. Mohd Yasin; H. Mohamed Yusoff

    2011-01-01

    Synthesis of carbon nanotubes (CNTs) below 600℃ using supporting catalyst chemical vapor deposition method was reported by many research groups. However, the floating catalyst chemical vapor deposition received less attention due to imperfect nanotubes produced. In this work, the effects of varying the preheating temperature on the synthesis of CNT were investigated. The reaction temperature was set at 570℃. The preheating set temperature was varied from 150 to 400℃ at 50℃ interval. Three O-ring shape heating mantels were used as heating source for the preheater. In situ monitoring device was used to observe the temperature profile in the reactor. Benzene and ferrocene were used as the carbon source and catalyst precursor, respectively. Vertically aligned CNTs were synthesized when the preheating temperature was set at 400℃. When the preheating temperature was increased up to 400℃, both the length and the alignment of CNTs produced were improved.

  4. Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

    Energy Technology Data Exchange (ETDEWEB)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Vangelista, S.; Kutrzeba-Kotowska, B.; Cocco, S.; Lamperti, A.; Tallarida, G. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Mameli, D. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Dipartimento di Scienze Chimiche, Universita di Cagliari, Cittadella Universitaria, 09042 Monserrato, Cagliari (Italy); Fanciulli, M. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, Universita degli studi Milano-Bicocca, Via R Cozzi 53, 20125 Milano (Italy)

    2012-05-01

    Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions.

  5. Thin Films with Low Zn Content Prepared by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Caijuan Tian

    2012-01-01

    Full Text Available Chemical bath deposition (CBD was used for the growth of thin films with low Zn content. The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated. The chemical growth mechanism of thin films was analyzed, and optimized growth conditions for the thin films were established. The fill factor and short-circuit current were improved while was used to replace CdS as the window layer in CdTe solar cells.

  6. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  7. Magnetic field effects on copper metal deposition from copper sulfate aqueous solution.

    Science.gov (United States)

    Udagawa, Chikako; Maeda, Aya; Katsuki, Akio; Maki, Syou; Morimoto, Shotaro; Tanimoto, Yoshifumi

    2014-05-01

    Effects of a magnetic field (≤0.5 T) on electroless copper metal deposition from the reaction of a copper sulfate aqueous solution and a zinc thin plate were examined in this study. In a zero field, a smooth copper thin film grew steadily on the plate. In a 0.38 T field, a smooth copper thin film deposited on a zinc plate within about 1 min. Then, it peeled off repeatedly from the plate. The yield of consumed copper ions increased about 2.1 times compared with that in a zero field. Mechanism of this magnetic field effect was discussed in terms of Lorentz force- and magnetic force-induced convection and local volta cell formation.

  8. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  9. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    Science.gov (United States)

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi; Koizumi, Satoshi

    2014-12-01

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  10. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs.

  11. Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

    Indian Academy of Sciences (India)

    R H Bari; L A Patil; P P Patil

    2006-10-01

    Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted.

  12. Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

    OpenAIRE

    SALL, THIERNO; Marí Soucase, Bernabé; Mollar García, Miguel Alfonso; Hartitti, Bouchaib; Fahoume, Mounir

    2015-01-01

    In2S3 thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In2S3 thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optic...

  13. Theoretical Descriptions of Carbon Nanotubes Synthesis in a Chemical Vapor Deposition Reactor: A Review

    OpenAIRE

    Lubej, M.; Plazl, I.

    2012-01-01

    The mechanisms by which carbon nanotubes nucleate and grow are still poorly understood. Understanding and mathematically describing the process is crucial for its optimization. This paper reviews different models which have been proposed to explain carbon nanotube growth in the chemical vapor deposition process. The review is divided into two sections, the first section describes some nucleation, growth and termination simulations based on molecular dynamics, and the second section describes ...

  14. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    OpenAIRE

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from R...

  15. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  16. Fabrication of Rare Earth-Doped Transparent Glass Ceramic Optical Fibers by Modified Chemical Vapor Deposition

    OpenAIRE

    2011-01-01

    International audience; Rare earth (RE) doped silica-based optical fibers with transparent glass ceramic (TGC) core was fabricated through the well-known modified chemical vapor deposition (MCVD) process without going through the commonly used stage of post-ceramming. The main characteristics of the RE-doped oxyde nanoparticles namely, their density and mean diameter in the fibers are dictated by the concentration of alkaline earth element used as phase separating agent. Magnesium and erbium ...

  17. Growth of Aligned Carbon Nanotubes through Microwave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    王升高; 汪建华; 马志斌; 王传新; 满卫东

    2005-01-01

    Aligned carbon nanotubes (CNTs) were synthesized on glass by microwave plasma chemical vapor deposition (MWPCVD) with a mixture of methane and hydrogen gases at the low temperature of 550 ℃. The experimental results show that both the self-bias potential and the density of the catalyst particles are responsible for the alignment of CNTs. When the catalyst particle density is high enough, strong interactions among the CNTs can inhibit CNTs from growing randomly and result in parallel alignment.

  18. Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Houweling, Z. Silvester, E-mail: Z.S.Houweling@uu.nl [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CB Utrecht (Netherlands); Geus, John W. [Electron Microscopy, Utrecht University, Padualaan 8, 3584 CH Utrecht (Netherlands); Jong, Michiel de; Harks, Peter-Paul R.M.L.; Werf, Karine H.M. van der; Schropp, Ruud E.I. [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CB Utrecht (Netherlands)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Process parameters to control hot-wire CVD of WO{sub 3-x} are categorized. Black-Right-Pointing-Pointer Growth time, oxygen partial pressure, filament and substrate temperature are varied. Black-Right-Pointing-Pointer Chemical and crystal structure, optical bandgap and morphology are determined. Black-Right-Pointing-Pointer Oxygen partial pressure determines the deposition rate up to as high as 36 {mu}m min{sup -1}. Black-Right-Pointing-Pointer Nanostructures, viz. wires, crystallites and closed crystallite films, are controllably deposited. - Abstract: We report the growth conditions of nanostructured tungsten oxide (WO{sub 3-x}) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was varied from 6.0 Multiplication-Sign 10{sup -6} to 1.0 mbar and the current through the filaments was varied from 4.0 to 9.0 A, which constitutes a filament temperature of 1390-2340 Degree-Sign C in vacuum. It is observed that the deposition rate of the films is predominantly determined by the oxygen partial pressure; it changes from about 1 to about 36,000 nm min{sup -1} in the investigated range. Regardless of the oxygen partial pressure and filament temperature used, thin films with a nanogranular morphology are obtained, provided that the depositions last for 30 min or shorter. The films consist either of amorphous or partially crystallized WO{sub 3-x} with high averaged transparencies of over 70% and an indirect optical band gap of 3.3 {+-} 0.1 eV. A prolonged deposition time entails an extended exposure of the films to thermal radiation from the filaments, which causes crystallization to monoclinic WO{sub 3} with diffraction maxima due to the (0 0 2), (2 0 0) and (0 2 0) crystallographic planes, furthermore the nanograins sinter and the films exhibit a cone

  19. Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ying; Frank Leung-Yuk Lam; HU Xijun; YAN Zifeng

    2006-01-01

    Copper nanorods have been synthesized in mesoporous SBA-15 by a low-temperature metal organic chemical vapor deposition (MOCVD)employing copper (Ⅱ) acetylacetonate, Cu(acac)2,and hydrogen as a precursor and reactant gas, respectively. The hydrogen plays an important role in chemical reduction of oganometallic precursor which enhances mass transfer in the interior of the SBA-15 porous substrate. Such copper nanostructures are of great potentials in the semiconductor due to their unusual optical, magnetic and electronic properties.In addition, it has been found that chemically modifying the substrate surface by carbon deposition is crucial to such synthesis of copper nanostructures in the interior of the SBA-15, which is able to change the surface properties of SBA-15 from hydrophilic to hydrophobic to promote the adsorption of organic cupric precursor. It has also been found that the copper nanoparticles deposited on the external surface are almost eliminated and the copper nanorods are more distinct while the product was treated with ammonia. This approach could be achieved under a mild condition: a low temperature (400℃) and vacuum (2 kPa) which is extremely milder than the conventional method. It actually sounds as a foundation which is the first time to synthesize a copper nanorod at a mild condition of a low reaction temperature and pressure.

  20. Chemical milling solution reveals stress corrosion cracks in titanium alloy

    Science.gov (United States)

    Braski, D. N.

    1967-01-01

    Solution of hydrogen flouride, hydrogen peroxide, and water reveals hot salt stress corrosion cracks in various titanium alloys. After the surface is rinsed in water, dried, and swabbed with the solution, it can be observed by the naked eye or at low magnification.

  1. Anodic deposition of colloidal iridium oxide thin films from hexahydroxyiridate(IV) solutions.

    Science.gov (United States)

    Zhao, Yixin; Vargas-Barbosa, Nella M; Hernandez-Pagan, Emil A; Mallouk, Thomas E

    2011-07-18

    A facile, in-situ deposition route to stable iridium oxide (IrO(x)·nH(2)O) nanoparticle thin films from [Ir(OH)(6)](2-) solutions is reported. The [Ir(OH)(6)](2-) solution, made by alkaline hydrolysis of [IrCl(6)](2-), is colorless and stable near neutral pH, and forms blue IrO(x)·nH(2)O nanoparticle suspensions once it is adjusted to acidic or basic conditions. IrO(x)·nH(2)O nanoparticle thin films are grown anodically on glassy carbon, fluorine-doped tin oxide, and gold electrodes by electrolyzing [Ir(OH)(6)](2-) solutions at +1.0-1.3 V versus Ag/AgCl. The thickness of the IrO(x)·nH(2)O films can be controlled by varying the concentration of [Ir(OH)(6)](2-) , the deposition potential, and/or the deposition time. These thin films are stable between pH 1 and 13 and have the lowest overpotential (η) for the oxygen evolution reaction (OER) of any yet reported. Near neutral pH, the Tafel slope for the OER at a IrO(x)·nH(2)O film/Au rotating disk electrode was 37-39 mV per decade. The exchange current density for the OER was 4-8 × 10(-10) A cm(-2) at a 4 mC cm(-2) coverage of electroactive Ir.

  2. Growth of nanocrystalline silicon carbide thin films by plasma enhanced chemical vapor deposition

    CERN Document Server

    Lee, S W; Moon, J Y; Ahn, S S; Kim, H Y; Shin, D H

    1999-01-01

    Nanocrystalline silicon carbide thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiH sub 4 , CH sub 4 , and H sub 2 gases. The effects of gas mixing ratio (CH sub 4 /SiH sub 4), deposition temperature, and RF power on the film properties have been studied. The growth rate, refractive index, and the optical energy gap depends critically on the growth conditions. The dependence of the growth rate on the gas flow ratio is quite different from the results obtained for the growth using C sub 2 H sub 2 gas instead of CH sub 4. As the deposition temperature is increased from 300 .deg. C to 600 .deg. C, hydrogen and carbon content in the film decreases and as a result the optical gap decreases. At the deposition temperature of 600 .deg. C and RF power of 150 W, the film structure si nanocrystalline, As the result of the nanocrystallization the dark conductivity is greatly improved. The nanocrystalline silicon carbide thin films may be used for large area optoelectronic devices...

  3. Controllable preparation of a nano-hydroxyapatite coating on carbon fibers by electrochemical deposition and chemical treatment.

    Science.gov (United States)

    Wang, Xudong; Zhao, Xueni; Wang, Wanying; Zhang, Jing; Zhang, Li; He, Fuzhen; Yang, Jianjun

    2016-06-01

    A nano-hydroxyapatite (HA) coating with appropriate thickness and morphology similar to that of human bone tissue was directly prepared onto the surfaces of carbon fibers (CFs). A mixed solution of nitric acid, hydrochloric acid, sulfuric acid, and hydrogen peroxide (NHSH) was used in the preparation process. The coating was fabricated by combining NHSH treatment and electrochemical deposition (ECD). NHSH treatment is easy to operate, produces rapid reaction, and highly effective. This method was first used to induce the nucleation and growth of HA crystals on the CF surfaces. Numerous O-containing functional groups, such as hydroxyl (-OH) and carboxyl (-COOH) groups, were grafted onto the CF surfaces by NHSH treatment (NHSH-CFs); as such, the amounts of these groups on the functionalized CFs increased by nearly 8- and 12-fold, respectively, compared with those on untreated CFs. After treatment, the NHSH-CFs not only acquired larger specific surface areas but retained surfaces free from serious corrosion or breakage. Hence, NHSH-CFs are ideal depositional substrates of HA coating during ECD. ECD was successfully used to prepare a nano-rod-like HA coating on the NHSH-CF surfaces. The elemental composition, structure, and morphology of the HA coating were effectively controlled by adjusting various technological parameters, such as the current density, deposition time, and temperature. The average central diameter of HA crystals and the coating density increased with increasing deposition time. The average central diameter of most HA crystals on the NHSH-CFs varied from approximately 60 nm to 210 nm as the deposition time increased from 60 min to 180 min. Further studies on a possible deposition mechanism revealed that numerous O-containing functional groups on the NHSH-CF surfaces could associate with electrolyte ions (Ca(2+)) to form special chemical bonds. These bonds can induce HA coating deposition and improve the interfacial bonding strength between the HA

  4. Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

    Science.gov (United States)

    Blumenstein, Nina J; Hofmeister, Caroline G; Lindemann, Peter; Huang, Cheng; Baier, Johannes; Leineweber, Andreas; Wöll, Christof; Schimmel, Thomas

    2016-01-01

    Summary In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiOx surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002) texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). Infrared spectroscopy (IR) measurements were used to investigate the polystyrene brushes before and after modification. PMID:26925358

  5. Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    Science.gov (United States)

    Gogoi, Paragjyoti; Saikia, Rajib; Changmai, Sanjib

    2015-04-01

    ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

  6. a Design of Experiment Study of the Nucleation of Chemical Vapor Deposited Diamond Films.

    Science.gov (United States)

    Tang, Chi

    1995-01-01

    Because of its property, diamond has a unique role in the semiconductor and tool industry. As diamond synthesis technology advances, more and more applications are emerging. However, in order to take advantage of its exceptional property, reliable control of nucleation and growth must be accomplished. In this study, the author systematically studies the nucleation process in chemical vapor deposition (CVD) of diamonds. Among many important intricacies concerning diamond nucleation on foreign surfaces, this study addresses the following issues: the role of ultrasonic pre-treatment in CVD; the correlation between hot filament chemical vapor deposition (HFCVD) and microwave assisted chemical vapor deposition (MACVD) control parameters and the nucleation processes; the role of biasing substrates on the nucleation density in MACVD; the correlation between parameters of biasing substrates and the nucleation density; the reliable control of nucleation in CVD diamond synthesis. To achieve the goal of this research, a multi -purpose deposition system was built enabling the author to eliminate unnecessary variables in the deposition process. To ensure the accuracy of the nucleation effects of parameters investigated, great effort was made to calibrate measurement instruments so that noise or fluctuations in the experiments were minimized. The implementation of design of experiments (DOE), a systematic investigating technique, vastly improved the efficiency of this study over the less sophisticated empirical approach. In addition, DOE allowed the author to quantitatively estimate the effects of control parameters. Finally, diamond deposition was confirmed by Scanning Electron microscope, Micro Raman Scattering and Rutherford Backscattering. This research has successfully implemented DOE in estimating the effects of diamond nucleation quantitatively. The mechanism of ultrasonic pre-treatment is explained, and its effects are ascribed to seeding. The effects of primary CVD

  7. Temporal and spatial trends of chemical composition of wet deposition samples collected in Austria

    Science.gov (United States)

    Schreiner, Elisabeth; Kasper-Giebl, Anne; Lohninger, Hans

    2016-04-01

    Triggered by the occurrence of acid rain a sampling network for the collection of wet deposition samples was initiated in Austria in the early 1980s. Now the data set covers a time period of slightly more than 30 years for the stations being operable since the beginning. Sampling of rain water and snow was and is performed with Wet and Dry Only Samplers (WADOS) on a daily basis. Chemical analysis of rain water and snow samples comprised anions (chloride, nitrate, sulfate) and cations (sodium, ammonium, potassium, calcium and magnesium) as well as pH and electrical conductivity. Here we evaluate and discuss temporal trends of both, ion concentrations and wet deposition data for twelve sampling stations, which were operable for most of the observation period of 30 years. As expected concentrations and wet deposition loads of sulfate and acidity decreased significantly during the last three decades - which is also reflected by a strong decrease of sulfur emissions in Austria and neighboring countries. Regarding nitrate the decrease of concentrations and wet deposition loads is less pronounced. Again this is in accordance with changes in emission data. In case of ammonium even less stations showed a significant decrease of annual average concentrations and depositions. Reasons for that might be twofold. On one hand emissions of ammonia did not decrease as strongly as e.g. sulfur emissions. Furthermore local sources will be more dominant and can influence the year to year variability. Seasonality of ion concentrations and deposition loads were investigated using Fourier analysis. Sulfate, nitrate, ammonium, acidity and also precipitation amount showed characteristic seasonal patterns for most of the sites and for concentrations as well as deposition loads. However the maxima in ion concentrations and deposition loads were observed during different times of the year. Concentrations of basic cations and chloride, on the contrary, hardly showed any seasonality. However, as

  8. Detecting Chemical Weapons: Threats, Requirements, Solutions, and Future Challenges

    Science.gov (United States)

    Boso, Brian

    2011-03-01

    Although chemicals have been reportedly used as weapons for thousands of years, it was not until 1915 at Ypres, France that an industrial chemical, chlorine, was used in World War I as an offensive weapon in significant quantity, causing mass casualties. From that point until today the development, detection, production and protection from chemical weapons has be an organized endeavor of many of the world's armed forces and in more recent times, non-governmental terrorist organizations. The number of Chemical Warfare Agents (CWAs) has steadily increased as research into more toxic substances continued for most of the 20 th century. Today there are over 70 substances including harassing agents like tear gas, incapacitating agents, and lethal agents like blister, blood, chocking, and nerve agents. The requirements for detecting chemical weapons vary depending on the context in which they are encountered and the concept of operation of the organization deploying the detection equipment. The US DoD, for example, has as a requirement, that US forces be able to continue their mission, even in the event of a chemical attack. This places stringent requirements on detection equipment. It must be lightweight (<2 lbs), detect a large array of chemical warfare agents and toxic industrial chemicals, detect and warn at concentration levels and time duration to prevent acute health effects, meet military ruggedness specifications and work over a wide range of temperature and humidity, and have a very high probability of detection with a similarly low probability of false positives. The current technology of choice to meet these stringent requirements is Ion Mobility Spectrometry. Many technologies are capable of detecting chemicals at the trace levels required and have been extensively developed for this application, including, but not limited to: mass spectroscopy, IR spectroscopy, RAMAN spectroscopy, MEMs micro-cantilever sensors, surface acoustic wave sensors, differential

  9. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  10. Physical Property Characterization of Pb2+-Doped CdS Nanofilms Deposited by Chemical-Bath Deposition at Low Temperature

    Science.gov (United States)

    Díaz-Reyes, J.; Contreras-Rascón, J. I.; Galván-Arellano, M.; Arias-Cerón, J. S.; Gutiérrez-Arias, J. E. M.; Flores-Mena, J. E.; Morín-Castillo, M. M.

    2016-08-01

    Pb2 +-doped CdS nanofilms are prepared using the growth technique chemical bath deposition (CBD) under optimum conditions lead acetate at the reservoir temperature of 20 ± 2 °C. The Pb2+ molar concentration was in the range 0.0 ≤ x ≤ 0.19.67, which was determined by energy-dispersive X-ray spectroscopy (EDS). The X-ray diffraction results show that the films are of PbS-CdS composites with individual CdS and PbS planes. The X-ray diffraction (XRD) analysis and Raman scattering reveal that CdS-deposited films showed the zincblende (ZB) crystalline phase. The average grain size of the CdS films ranged from 1.21 to 6.67 nm that was determined by the Debye-Scherrer equation from ZB (111) direction, and it was confirmed by high-resolution transmission electron microscopy (HRTEM). Raman scattering shows that the lattice dynamics is characteristic of bimodal behaviour and the multipeaks adjust of the first optical longitudinal mode for the Pb2+-doped CdS denotes the Raman shift of the characteristic peak in the range of 305-298 cm-1 of the CdS crystals, which is associated with the lead ion incorporation. The films exhibit three direct bandgaps, ~2.44 eV attributed to CdS; the other varies continuously from 1.67 to 1.99 eV and another disappears as Pb2+ molar fraction increases.

  11. Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method.

    Science.gov (United States)

    Waman, V S; Kamble, M M; Ghosh, S S; Mayabadi, Azam; Sathe, V G; Amalnekar, D P; Pathan, H M; Jadkar, S R

    2012-11-01

    In this paper, we report the synthesis of highly conducting phosphorous doped hydrogenated nanocrystalline silicon (nc-Si:H) films at substantially low substrate temperature (200 degrees C) by hot-wire chemical vapor deposition (HW-CVD) method using pure silane (SiH4) and phosphine (PH3) gas mixture without hydrogen dilution. Structural, optical and electrical properties of these films were investigated as a function of PH3 gas-phase ratio. The characterization of these films by low-angle X-ray diffraction, Raman spectroscopy and atomic force microscopy revealed that, the incorporation of phosphorous in nc-Si:H induces an amorphization in the nc-Si:H film structure. Fourier transform infrared spectroscopy analysis indicates that hydrogen predominately incorporated in phosphorous doped n-type nc-Si:H films mainly in di-hydrogen species (Si-H2) and poly-hydrogen (Si-H2)n bonded species signifying that the films become porous, and micro-void rich. We have observed high band gap (1.97-2.37 eV) in the films, though the hydrogen content is low (< 1.4 at.%) over the entire range of PH3 gas-phase ratio studied. Under the optimum deposition conditions, phosphorous doped nc-Si:H films with high dark conductivity (sigma Dark -5.3 S/cm), low charge-carrier activation energy (E(act) - 132 meV) and high band gap (- 2.01 eV), low hydrogen content (- 0.74 at.%) were obtained at high deposition rate (12.9 angstroms/s).

  12. Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

    Science.gov (United States)

    Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

    2010-09-01

    We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

  13. Supercritical fluid chemical deposition of Pd nanoparticles on magnesium–scandium alloy for hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Couillaud, Samuel; Kirikova, Marina [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Zaïdi, Warda; Bonnet, Jean-Pierre [LRCS, UMR CNRS 6007, 33 rue Saint-Leu, 80039-Amiens (France); Marre, Samuel; Aymonier, Cyril [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Zhang, Junxian; Cuevas, Fermin; Latroche, Michel [ICMPE, CNRS-UPEC, UMR 7182, 2-8 rue Henri Dunant, 94320-Thiais (France); Aymard, Luc [LRCS, UMR CNRS 6007, 33 rue Saint-Leu, 80039-Amiens (France); Bobet, Jean-Louis, E-mail: bobet@icmcb-bordeaux.cnrs.fr [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2013-10-15

    Highlights: •Nanoparticles of Pd were deposed on the binary compound Mg{sub 0.65}Sc{sub 0.35} using the Supercritical Fluid Chemical Deposition (SFCD) method. •Numerous parameters were tested and optimized in order to obtain a homogeneous deposition. •At the first step, Pd@Mg0.65Sc0.35 decomposes into ScH{sub 2} and MgH{sub 2} under hydrogen pressure (1 MPa) at 330 °C. •The mixture, after decomposition absorbs hydrogen reversibly on Mg/MgH{sub 2} couple with good kinetics. -- Abstract: The deposition of Pd nanoparticles on the binary compound Mg{sub 0.65}Sc{sub 0.35} using the Supercritical Fluid Chemical Deposition (SFCD) method was performed. There, the SFCD operating parameters (co-solvent, temperature, CO{sub 2} and hydrogen pressure, reaction time) have been optimized to obtain homogeneous deposition of Pd nanoparticles (around 10 nm). The hydrogenation properties of the optimized Pd@Mg{sub 0.65}Sc{sub 0.35} material were determined and compared to those of Mg{sub 0.65}Sc{sub 0.35}Pd{sub 0.024}. The latter compound forms at 300 °C and 1 MPa of H{sub 2} a hydride that crystallizes in the fluorite structure, absorbs reversibly 1.5 wt.% hydrogen and exhibits fast kinetics. In contrast, Pd@Mg{sub 0.65}Sc{sub 0.35} compound decomposes into ScH{sub 2} and MgH{sub 2} during hydrogen absorption under the same conditions. However, reversible sorption reaches 3.3 wt.% of hydrogen while keeping good kinetics. The possible roles of Pd on the hydrogen-induced alloy decomposition are discussed.

  14. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  15. High-temperature conductivity in chemical bath deposited copper selenide thin films

    Science.gov (United States)

    Dhanam, M.; Manoj, P. K.; Prabhu, Rajeev. R.

    2005-07-01

    This paper reports high-temperature (305-523 K) electrical studies of chemical bath deposited copper (I) selenide (Cu 2-xSe) and copper (II) selenide (Cu 3Se 2) thin films. Cu 2-xSe and Cu 3Se 2 have been prepared on glass substrates from the same chemical bath at room temperature by controlling the pH. From X-ray diffraction (XRD) profiles, it has been found that Cu 2-xSe and Cu 3Se 2 have cubic and tetragonal structures, respectively. The composition of the chemical constituent in the films has been confirmed from XRD data and energy-dispersive X-ray analysis (EDAX). It has been found that both phases of copper selenide thin films have thermally activated conduction in the high-temperature range. In this paper we also report the variation of electrical parameters with film thickness and the applied voltage.

  16. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  17. Improved growth of solution-deposited thin films on polycrystalline Cu(In,Ga)Se{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), 70565, Stuttgart (Germany); Abou-Ras, Daniel [Helmholtz-Zentrum Berlin fuer Materialien und Energie, 14109, Berlin (Germany)

    2016-04-15

    CdS and Zn(O,S) grown by chemical bath deposition (CBD) are well established buffer materials for Cu(In,Ga)Se{sub 2} (CIGS) solar cells. As recently reported, a non-contiguous coverage of CBD buffers on CIGS grains with {112} surfaces can be detected, which was explained in terms of low surface energies of the {112} facets, leading to deteriorated wetting of the chemical solution on the CIGS surface. In the present contribution, we report on the effect of air annealing of CIGS thin films prior to the CBD of CdS and Zn(O,S) layers. In contrast to the growth on the as-grown CIGS layers, these buffer lay- ers grow densely on the annealed CIGS layer, even on grains with {112} surfaces. We explain the different growth behavior by increased surface energies of CIGS grains due to the annealing step, i.e., due to oxidation of the CIGS surface. Reference solar cells were processed and completed by i-ZnO/ZnO:Al layers for CdS and by (Zn,Mg)O/ZnO:Al for Zn(O,S) buffers. For solar cells with both, CdS and Zn(O,S) buffers, air-annealed CIGS films with improved buffer coverage resulted in higher power-conversion efficiencies, as compared with the devices containing as-grown CIGS layers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Determination of solute organic concentration in contaminated soils using a chemical-equilibrium soil column system

    DEFF Research Database (Denmark)

    Gamst, Jesper; Kjeldsen, Peter; Christensen, Thomas Højlund

    2007-01-01

    Groundwater risk assessment of contaminated soils implies determination of the solute concentration leaching out of the soil. Determination based on estimation techniques or simple experimental batch approach has proven inadequate. Two chemical equilibrium soil column leaching tests...... for determination of solute concentration in a contaminated soil were developed; (1) a chemical Equilibrium and Recirculation column test for Volatile organic chemicals (ER-V) and (2) a chemical Equilibrium and Recirculation column test for Hydrophobic organic chemicals (ER-H). The two test systems were evaluated...... to measure solute phase concentration of PAHs in contaminated soils. Overall a reliable and reproducable system for determining solute concentration of a wide range of organic compounds in contaminated soils has been developed....

  19. Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Lan; ZHAO De-Gang; YANG Hui; LIANG Jun-Wu

    2007-01-01

    A high-Al-content AlCaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire bylow pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity,and twisted mosaicity on the conditions of the AlCaN epilayer deposition is evaluated. An AlCaN epilayer withfavourable surface morphology and crystal quality is deposited on a 20nm low-temperature-deposited AlN buffer at a low Ⅴ/Ⅲ flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.

  20. MBMS studies of gas-phase kinetics in diamond chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fox, C.A. [Stanford Univ., CA (United States); McMaster, M.C. [IBM San Jose, CA (United States); Tung, D.M. [Sandia National Labs., Livermore, CA (United States)] [and others

    1995-03-01

    A molecular beam mass spectrometer system (MBMS) has been used to determine the near-surface gaseous composition involved in the low pressure chemical vapor deposition of diamond. With this system, radical and stable species can be detected with a sensitivity better than 10 ppm. Threshold ionization techniques have been employed to distinguish between radical species in the deposition environment from radical species generated by parent molecule cracking. An extensive calibration procedure was used to enable the quantitative determination of H-atom and CH{sub 3} radical mole fractions. Using the MBMS system, the gaseous composition involved in LPCVD of diamond has been measured for a wide variety of deposition conditions, including hot-filament gas activation, microwave-plasma gas activation, and a variety of precursor feed mixtures (ex: CH{sub 4}/H{sub 2}, C{sub 2}H{sub 2}/H{sub 2}). For microwave-plasma activation (MPCVD), the radical concentrations (H-atom and CH{sub 3} radicals) are independent of the identity of the precursor feed gas provided the input carbon mole fraction is constant. However, in hot-filament diamond deposition (HFCVD), the atomic hydrogen concentration decreased by an order of magnitude as the mole fraction of carbon in the precursor mixture is increased to .07; this sharp reduction has been attributed to filament poisoning of the catalytic tungsten surface via hydrocarbon deposition. Additionally, the authors find that the H-atom concentration is independent of the substrate temperature for both hot-filament and microwave plasma deposition; radial H-atom diffusion is invoked to explain this observation.

  1. Deposition of carbon nanotubes onto aramid fibers using as-received and chemically modified fibers

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez-Uicab, O. [Centro de Investigación Científica de Yucatán A.C., Unidad de Materiales, Calle 43 No.130, Col. Chuburna de Hidalgo, C.P. 97200 Mérida, Yucatán (Mexico); Avilés, F., E-mail: faviles@cicy.mx [Centro de Investigación Científica de Yucatán A.C., Unidad de Materiales, Calle 43 No.130, Col. Chuburna de Hidalgo, C.P. 97200 Mérida, Yucatán (Mexico); Gonzalez-Chi, P.I; Canché-Escamilla, G.; Duarte-Aranda, S. [Centro de Investigación Científica de Yucatán A.C., Unidad de Materiales, Calle 43 No.130, Col. Chuburna de Hidalgo, C.P. 97200 Mérida, Yucatán (Mexico); Yazdani-Pedram, M. [Facultad de Ciencias Químicas y Farmacéuticas, Universidad de Chile, S. Livingstone 1007, Independencia, Santiago (Chile); Toro, P. [Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Beauchef 850, Santiago (Chile); Gamboa, F. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Mérida, Depto. de Física Aplicada, Km. 6 Antigua Carretera a Progreso, 97310 Mérida, Yucatán (Mexico); Mazo, M.A.; Nistal, A.; Rubio, J. [Instituto de Cerámica y Vidrio (ICV-CSIC), Kelsen 5, 28049 Madrid (Spain)

    2016-11-01

    Highlights: • The surface of aramid fibers was functionalized by two acid treatments. • The treatment based on HNO{sub 3}/H{sub 2}SO{sub 4} reduced the mechanical properties of the fibers. • CNTs were deposited on the aramid fibers, reaching electrical conductivity. • Homogeneous CNT distribution was achieved by using pristine fibers or chlorosulfonic acid. - Abstract: Multiwall carbon nanotubes (MWCNTs) oxidized by an acid treatment were deposited on the surface of as-received commercial aramid fibers containing a surface coating (“sizing”), and fibers modified by either a chlorosulfonic treatment or a mixture of nitric and sulfuric acids. The surface of the aramid fiber activated by the chemical treatments presents increasing density of CO, COOH and OH functional groups. However, these chemical treatments reduced the tensile mechanical properties of the fibers, especially when the nitric and sulfuric acid mixture was used. Characterization of the MWCNTs deposited on the fiber surface was conducted by scanning electron microscopy, Raman spectroscopy mapping and X-ray photoelectron spectroscopy. These characterizations showed higher areal concentration and more homogeneous distribution of MWCNTs over the aramid fibers for as-received fibers and for those modified with chlorosulfonic acid, suggesting the existence of interaction between the oxidized MWCNTs and the fiber coating. The electrical resistance of the MWCNT-modified aramid yarns comprising ∼1000 individual fibers was in the order of MΩ/cm, which renders multifunctional properties.

  2. Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Sharma

    2014-01-01

    Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

  3. Chemically deposited CdS by an ammonia-free process for solar cells window layers

    Energy Technology Data Exchange (ETDEWEB)

    Ochoa-Landin, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico); Departamento de Fisica, Universidad de Sonora, Apdo. Postal 88, 83190 Hermosillo, Son. (Mexico); Sastre-Hernandez, J.; Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional UP Adolfo Lopez Mateos, Edif. 9, 07738 Mexico, DF (Mexico); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)

    2010-02-15

    Chemically deposited CdS window layers were studied on two different transparent conductive substrates, namely indium tin oxide (ITO) and fluorine doped tin oxide (FTO), to determine the influence of their properties on CdS/CdTe solar cells performance. Three types of CdS films obtained from different chemical bath deposition (CBD) processes were studied. The three CBD processes employed sodium citrate as the complexing agent in partial or full substitution of ammonia. The CdS films were studied by X-ray diffraction, optical transmission spectroscopy and atomic force microscopy. CdS/CdTe devices were completed by depositing 3 {mu}m thick CdTe absorbent layers by means of the close-spaced vapor transport technique (CSVT). Evaporated Cu-Au was used as the back contact in all the solar cells. Dark and under illumination J-V characteristic and quantum efficiency measurements were done on the CdS/CdTe devices to determine their conversion efficiency and spectral response. The efficiency of the cells depended on the window layer and on the transparent contact with values between 5.7% and 8.7%. (author)

  4. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

    Science.gov (United States)

    Knorr, Daniel B., Jr.; Williams, Kristen S.; Baril, Neil F.; Weiland, Conan; Andzelm, Jan W.; Lenhart, Joseph L.; Woicik, Joseph C.; Fischer, Daniel A.; Tidrow, Meimei Z.; Bandara, Sumith V.; Henry, Nathan C.

    2014-11-01

    Focal plane arrays of strained layer superlattices (SLSs) composed of InAs/GaSb are excellent candidates for infrared imaging, but one key factor limiting their utility is the lack of a surface passivation technique capable of protecting the mesa sidewall from degradation. Along these lines, we demonstrate the use of aqueous 3-aminopropyl triethoxysilane (APTES) deposited as a surface functionalizing agent for subsequent polymer passivation on InAs and GaSb surfaces following a HCl/citric acid procedure to remove the conductive oxide In2O3. Using atomic force microscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and modeling with density functional theory (DFT), we demonstrate that APTES films can successfully be deposited on III-V substrates by spin coating and directly compare these films to those deposited on silicon substrates. The HCl/citric acid surface preparation treatment is particularly effective at removing In2O3 without the surface segregation of In oxides observed from use of HCl alone. However, HCl/citric acid surface treatment method does result in heavy oxidation of both Ga and Sb, accompanied by segregation of Ga oxide to the surface. Deposited APTES layer thickness did not depend on the substrate choice, and thicknesses between 1 and 20 nm were obtained for APTES solution concentrations ranging from 0.1 to 2.5 vol %. XPS results for the N1s band of APTES showed that the content of ionic nitrogen was high (∼50%) for the thinnest films (∼1 nm), and decreased with increasing film thickness. These results indicate that APTES can indeed be used to form a silane surface layer to cover III-V materials substrates. Such APTES silane layers may prove useful in surface passivation of these materials alone, or as surface functionalizing agents for subsequent covalent binding with polymer overlayers like polyimide.

  5. Modeling preferential flow and its consequences on solute transfer in a strongly heterogeneous deposit

    Science.gov (United States)

    Ben Slimene, Erij; Lassabatere, Laurent; Winiarski, Thierry; Gourdon, Remy

    2016-04-01

    The understanding of the fate of pollutants in the vadose zone is a prerequisite to manage soil and groundwater quality. Water infiltrates into the soil and carries a large amount of pollutants (heavy metals, organic compounds, etc.). The quality of groundwater depends on the capability of soils to remove pollutants while water infiltrates. The capability of soils to remove pollutants depends not only on their geochemical properties and affinity with pollutants but also on the quality of the contact between the reactive particles of the soil and pollutants. In such a context, preferential flows are the worst scenario since they prevent pollutants from reaching large parts of the soil including reactive zones that could serve for pollutant removal. The negative effects of preferential flow have already been pointed out by several studies. In this paper, we investigate numerically the effect of the establishment of preferential flow in a numerical section (13.5m long and 2.5m deep) that mimics a strongly heterogeneous deposit. The modelled deposit is made of several lithofacies with contrasting hydraulic properties. The numerical study proves that this strong contrast in hydraulic properties triggers the establishment of preferential flow (capillary barriers and funneled flow). Preferential flow develops mainly for low initial water contents and low fluxes imposed at the soil surface. The impact of these flows on solute transfer is also investigated as a function of solute reactivity and affinity to soil sorption sites. Modeled results clearly show that solute transport is greatly impacted by flow heterogeneity. Funneled flows have the same impacts as water fractionation into mobile and immobile transfer with a fast transport of solutes by preferential flow and solute diffusion to zones where the flow is slower. Such a pattern greatly impacts retention and reduces the access of pollutants into large parts of the soil. Retention is thus greatly reduced at the section

  6. Effect of 20 % EDTA Aqueous Solution on Defective Tubes (Alloy600) in High Temperature Chemical Cleaning Environments

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Hyuk Chul [KHNP-CRI, Daejeon (Korea, Republic of)

    2016-04-15

    The transport and deposition of corrosion products in pressurized water nuclear reactor (PWR) steam generators have led to corrosion (SCC, denting etc.) problems. Lancing, mechanical cleaning and chemical cleaning have been used to reduce these problems. The methods of lancing and mechanical cleaning have limitations in removing corrosion products due to the structure of steam generator tubes. But high temperature chemical cleaning (HTCC) with EDTA is the most effective method to remove corrosion products regardless of the structure. However, EDTA in chemical cleaning aqueous solution and chemical cleaning environments affects the integrity of materials used in steam generators. The nuclear power plants have to perform the pre-test (also called as qualification test (QT)) that confirms the effect on the integrity of materials after HTCC. This is one of the series studies that assess the effect, and this study determines the effects of 20 % EDTA aqueous solution on defective tubes in high temperature chemical cleaning environments. The depth and magnitude of defects in steam generator (SG) tubes were measured by eddy current test (ECT) signals. Surface analysis and magnitude of defects were performed by using SEM/EDS. Corrosion rate was assessed by weight loss of specimens. The ECT signals (potential and depth %) of defective tubes increased marginally. But the lengths of defects, oxides on the surface and weights of specimens did not change. The average corrosion rate of standard corrosion specimens was negligible. But the surfaces on specimens showed traces of etching. The depth of etching showed a range on the nanometer. After comprehensive evaluation of all the results, it is concluded that 20 % EDTA aqueous solution in high temperature chemical cleaning environments does not have a negative effect on defective tubes.

  7. Nucleation and growth of single layer graphene on electrodeposited Cu by cold wall chemical vapor deposition

    Science.gov (United States)

    Das, Shantanu; Drucker, Jeff

    2017-03-01

    The nucleation density and average size of graphene crystallites grown using cold wall chemical vapor deposition (CVD) on 4 μm thick Cu films electrodeposited on W substrates can be tuned by varying growth parameters. Growth at a fixed substrate temperature of 1000 °C and total pressure of 700 Torr using Ar, H2 and CH4 mixtures enabled the contribution of total flow rate, CH4:H2 ratio and dilution of the CH4/H2 mixture by Ar to be identified. The largest variation in nucleation density was obtained by varying the CH4:H2 ratio. The observed morphological changes are analogous to those that would be expected if the deposition rate were varied at fixed substrate temperature for physical deposition using thermal evaporation. The graphene crystallite boundary morphology progresses from irregular/jagged through convex hexagonal to regular hexagonal as the effective C deposition rate decreases. This observation suggests that edge diffusion of C atoms along the crystallite boundaries, in addition to H2 etching, may contribute to shape evolution of the graphene crystallites. These results demonstrate that graphene grown using cold wall CVD follows a nucleation and growth mechanism similar to hot wall CVD. As a consequence, the vast knowledge base relevant to hot wall CVD may be exploited for graphene synthesis by the industrially preferable cold wall method.

  8. Nucleation and growth of chemically vapor deposited tungsten on various substrate materials: A review

    Energy Technology Data Exchange (ETDEWEB)

    Broadbent, E.K.

    1987-11-01

    W films produced by chemical-vapor deposition (CVD), typically via reduction of WF/sub 6/, are being used for numerous applications in very large scale integrated circuit technology. Blanket and selectively deposited films require nucleation and growth on a specific underlayer material: Si, metal, or metal silicide. The compatibility of CVD W with various underlayers is reviewed for the device applications of contact/via fill, diffusion barrier, metal interconnect, and source/drain coating. Nucleation of W directly on single crystal Si can sometimes produce tunnel-defect structures at the edges or along the entire interface of the deposit. Sputtered Mo and W, and to some extent TiW and TiN, have been shown to be suitable nucleation layers for CVD W, yielding a fluorine-free interface with low-electrical contact resistance. A sputtered W/Ti adhesion bilayer is demonstrated for a blanket W deposition+etchback process. CoSi/sub 2/ appears an appropriate choice where CVD W and salicide technologies are combined.

  9. Structure and mechanical properties of pyrolytic carbon produced by fluidized bed chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Honorato, E.; Meadows, P.J. [Manchester Materials Science Centre, School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom); Xiao, P. [Manchester Materials Science Centre, School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom)], E-mail: Ping.Xiao@manchester.ac.uk; Marsh, G.; Abram, T.J. [Nexia Solutions Ltd., Springfields PR4 0XJ (United Kingdom)

    2008-11-15

    Pyrolytic carbon was deposited on spherical particles using a multi-spout fluidized bed chemical vapor deposition reactor to fabricate TRISO fuel for the High Temperature Reactor (HTR). Modern techniques such as Raman spectroscopy and nanoindentation supported by porosimetry, scanning electron microscopy and transmission electron microscopy were employed to analyze the particle coatings directly. Raman spectroscopy and nanoindentation were given special attention due to their capacity to provide information on the internal structure of pyrolytic carbon and its mechanical properties without the necessity of complex sample preparation. The results obtained were used to study the relationship deposition conditions-microstructure-mechanical properties in more detail. Increasing the deposition temperature reduced the density and Young's modulus as porosity and in-plane disorder of carbon domains increased. There was also a change from a laminar microstructure of PyC to that containing more spherical particles. It appeared that anisotropy, domain size and level of graphitization (examined by Raman and TEM) had a strong influence on the mechanical properties. Clear differences were observed between acetylene and the acetylene/propylene mixture as precursor gases.

  10. Structural, Optical and Electrical Properties of Nanocrystalline Cuprous Oxide Thin Film Deposited By Chemical Method

    Directory of Open Access Journals (Sweden)

    Prakash Bansilal Ahirrao

    2010-06-01

    Full Text Available Cuprous oxide (Cu2O is an interesting p-type semiconductor material used in solar cell applications.  The Modified Chemical Bath Deposition (M-CBD method is suitable for growing thin multilayer structure due to low deposition temperature. This method does not require any sophisticated instrument and substrate need not to be conductive. The nanocrystalline Cu2O thin films were deposited on glass substrates by M-CBD method. The deposited films were characterized by different characterization techniques to study structural, surface morphological, optical and electrical properties. The structural studies show that, the formation of Cu2O thin films with an average crystallite size of 14 nm. Optical studies show a direct band gap 2.48 eV. The room temperature electrical resistivity is of the order of 1.3 kW-cm and activation energy 0.33 eV. The films exhibit p-type electrical conductivity as seen by thermo-emf measurements.

  11. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  12. Electrochemical metal speciation analysis of chemically heterogeneous samples: the outstanding features of stripping chronopotentiometry at scanned deposition potential

    NARCIS (Netherlands)

    Leeuwen, van H.P.; Town, R.M.

    2003-01-01

    The application of depletive stripping chronopotentiometry at scanned deposition potential (SSCP) to metal ion speciation analysis of chemically heterogeneous complex systems is described. In this electroanalytical stripping technique, metal which is accumulated in the electrode during the depositio

  13. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Chikoidze, E.; Dumont, Y. [GEMaC, Université de Versailles St. Quentin en Yvelines-CNRS, Versailles (France); Fanciulli, M. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano (Italy)

    2014-05-07

    R-Fe-O (R = rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850 °C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  14. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    Science.gov (United States)

    Mantovan, R.; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G.; Chikoidze, E.; Dumont, Y.; Fanciulli, M.

    2014-05-01

    R-Fe-O (R = rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er2O3 and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO3 and ErFe2O4 phases develop following subsequent thermal annealing processes at 850 °C in air and N2. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  15. The effect of ultrasonic pre-treatment on nucleation density of chemical vapor deposition diamond

    Science.gov (United States)

    Tang, Chi; Ingram, David C.

    1995-11-01

    Using statistical design of experiments, the effect of ultrasonic pre-treatment on the nucleation density of diamond was studied. The parameters investigated included ultrasonic excitation power, concentration of diamond powder in water, duration of ultrasonic excitation, and duration of cleaning with water after ultrasonic excitation. Diamond films were deposited on silicon (100) substrates using microwave assisted plasma chemical vapor deposition. The nucleation density varied from 106 nuclei/cm2 to 109 nuclei/cm2. The results illustrated that the dominant effect in ultrasonic pre-treatment was seeding. Moreover, scratches caused by the seeds during the treatment enabled more seeds to be retained on the surface. Based on these results, an optimized ultrasonic pretreatment has been developed. The new procedure yields a uniform nucleation density of 109 nuclei/cm2 on silicon (100) substrates.

  16. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    Science.gov (United States)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  17. Synthesis of zirconia (ZrO2) nanowires via chemical vapor deposition

    Science.gov (United States)

    Baek, M. K.; Park, S. J.; Choi, D. J.

    2017-02-01

    Monoclinic zirconia nanowires were synthesized by chemical vapor deposition using ZrCl4 powder as a starting material at 1200 °C and 760 Torr. Graphite was employed as a substrate, and an Au thin film was pre-deposited on the graphite as a catalyst. The zirconia nanostructure morphology was observed through scanning electron microscopy and transmission electron microscopy. Based on X-ray diffraction, selected area electron diffraction, and Raman spectroscopy data, the resulting crystal structure was found to be single crystalline monoclinic zirconia. The homogeneous distributions of Zr, O and Au were studied by scanning transmission electron microscopy with energy dispersive X-ray spectroscopy mapping, and there was no metal droplet at the nanowire tips despite the use of an Au metal catalyst. This result is apart from that of conventional metal catalyzed nanowires.

  18. Preparation of diamond/Cu microchannel heat sink by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    刘学璋; 罗浩; 苏栩; 余志明

    2015-01-01

    A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition (HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray detector (EDX). Results show that the nucleation density is found to be up to 1010 cm−2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.

  19. Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

    Science.gov (United States)

    Lupina, G.; Strobel, C.; Dabrowski, J.; Lippert, G.; Kitzmann, J.; Krause, H. M.; Wenger, Ch.; Lukosius, M.; Wolff, A.; Albert, M.; Bartha, J. W.

    2016-05-01

    Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing, the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film, whereby a high crystalline quality of graphene is preserved.

  20. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  1. Synthesis and Characterization of SnO2 Thin Films by Chemical Bath Deposition

    Science.gov (United States)

    Rifai, Aditia; Iqbal, Muhammad; Nugraha; Nuruddin, Ahmad; Suyatman; Yuliarto, Brian

    2011-12-01

    SnO2 thin films were deposited on glass substrate by chemical bath deposition (CBD) with stannous chloride (SnCl2..2H2O) as a precursor and urea (CO(NH2)2) as a buffer. X-Ray Diffraction (XRD) are used to characterize the structure of the films; the surface morphology of the films were observed by Scanning Electron Microscope (SEM). Using this techniques, we specify the effect of stannous chloride concentration and weight ratio of urea/H2O on the crystallinity and morphology of these films. The rutile structure corresponding (110), (101) and (211) planes of SnO2 is obtained. The increasing of stannous chloride concentration and the decreasing weight ratio of urea/H2O is found to improve the crystallinity of the film. The average diameter of grain size is about 96 nm.

  2. MgB{sub 2} thin films by hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xi, X.X. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]. E-mail: xxx4@psu.edu; Pogrebnyakov, A.V. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Zhuang, C.G. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Physics, Peking University, Beijing 100871 (China); Li, Qi [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D.R. [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Y.B.; Tian, W.; Pan, X.Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Cybart, S.A. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Dynes, R.C. [Department of Physics, University of California, Berkeley, CA 94720 (United States)

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB{sub 2} thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB{sub 2} films. The epitaxial pure MgB{sub 2} films grown by HPCVD show higher-than-bulk T {sub c} due to tensile strain in the films. The HPCVD films are the cleanest MgB{sub 2} materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB{sub 2}. The carbon-alloyed HPCVD films demonstrate record-high H {sub c2} values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB{sub 2} Josephson junctions.

  3. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

    Science.gov (United States)

    Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

    2016-01-01

    Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

  4. Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

    Directory of Open Access Journals (Sweden)

    J.K. Rath

    2010-01-01

    Full Text Available Nanostructured thin silicon-based films have been deposited using the hot-wire chemical vapour deposition (HWCVD technique at the University of the Western Cape. A variety of techniques including optical and infrared spectroscopy, Raman scattering spectroscopy, X-rays diffraction (XRD and transmission electron microscopy (TEM have been used for characterisation of the films. The electrical measurements show that the films have good values of photoresponse, and the photocurrent remains stable after several hours of light soaking. This contribution will discuss the characteristics of the hydrogenated nanocrystalline silicon thin films deposited using increased process chamber pressure at a fixed hydrogen dilution ratio in monosilane gas.

  5. In Situ X-ray Absorption Near-Edge Structure Spectroscopy of ZnO Nanowire Growth During Chemical Bath Deposition

    Energy Technology Data Exchange (ETDEWEB)

    McPeak, Kevin M.; Becker, Matthew A.; Britton, Nathan G.; Majidi, Hasti; Bunker, Bruce A.; Baxter, Jason B. (Drexel); (Notre)

    2010-12-03

    Chemical bath deposition (CBD) offers a simple and inexpensive route to deposit semiconductor nanostructures, but lack of fundamental understanding and control of the underlying chemistry has limited its versatility. Here we report the first use of in situ X-ray absorption spectroscopy during CBD, enabling detailed investigation of both reaction mechanisms and kinetics of ZnO nanowire growth from zinc nitrate and hexamethylenetetramine (HMTA) precursors. Time-resolved X-ray absorption near-edge structure (XANES) spectra were used to quantify Zn(II) speciation in both solution and solid phases. ZnO crystallizes directly from [Zn(H{sub 2}O){sub 6}]{sup 2+} without long-lived intermediates. Using ZnO nanowire deposition as an example, this study establishes in situ XANES spectroscopy as an excellent quantitative tool to understand CBD of nanomaterials.

  6. The chemical composition and fluxes of atmospheric wet deposition at four sites in South Africa

    Science.gov (United States)

    Conradie, E. H.; Van Zyl, P. G.; Pienaar, J. J.; Beukes, J. P.; Galy-Lacaux, C.; Venter, A. D.; Mkhatshwa, G. V.

    2016-12-01

    South Africa is the economic hub of southern Africa and is regarded as an important source region of atmospheric pollutants. A nitrogen dioxide (NO2) hotspot is clearly visible from space over the South African Mpumalanga Highveld, while South Africa is also regarded as the 9th largest anthropogenic sulphur (S) emitting country. Notwithstanding the importance of South Africa with regard to nitrogen (N) and S emissions, very limited data has been published on the chemical composition of wet deposition for this region. This paper presents the concentrations of sodium (Na+), ammonium (NH4+), potassium (K+), calcium (Ca2+), magnesium (Mg2+), nitrate (NO3-), chloride (Cl-), sulphate (SO42-) and water-soluble organic acids (OA) in the wet deposition samples collected between 2009 and 2014 at four South African IDAF (IGAC DEBITS Africa) sites, which are regarded as regional representatives of the north-eastern interior. Also, wet deposition fluxes of the ten ions are calculated and presented in this paper. The results show that the total ionic concentrations and fluxes of wet deposition were much higher at the two sites closer to anthropogenic emissions, while the pH of wet deposition at these two sites were lower compared to that of the two sites that were less impacted by anthropogenic emissions. . The major sources of the ten ions included marine, terrigenous (crust), fossil fuel combustion, agriculture and biomass burning. Significant contributions from fossil fuel combustion were determined for the two sites in close proximity to anthropogenic source regions. The results of back trajectory analysis, however, did indicate that the two remote sites are also affected by air masses passing over the source region through anti-cyclonic recirculation. The largest contributions at the two sites distant from the anthropogenic source regions were marine sources, while the impact of biomass burning was also more significant at the remote sites. Comparison to previous wet

  7. Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

    Science.gov (United States)

    Shinoda, Nao; Itokawa, Hiroshi; Fujitsuka, Ryota; Sekine, Katsuyuki; Onoue, Seiji; Tonotani, Junichi

    2016-04-01

    The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N-Si3, N-Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules and H in the SiO2 film with subsequent oxide deposition using O3 as an oxidant. The capacitance-voltage (C-V) curves of metal-oxide-semiconductor (MOS) capacitors are obtained. The negative shift of the C-V curve is caused by the increase in the density of positive fix charge traps in CVD-SiO2 induced by plasma nitridation. The C-V curve of plasma-nitrided SiO2 subjected to annealing shifts to the positive direction and that subjected to the subsequent oxide deposition shifts markedly to the negative direction. It is clarified that the density of positive charge fixed traps in plasma-nitrided SiO2 films decrease because the amount of N2 molecules is decreased by annealing, and that the density of traps increases because NH species are generated and move to the interface between SiO2 and the Si substrate with the subsequent oxide deposition.

  8. Corrosion resistant coatings (Al2O3) produced by metal organic chemical vapour deposition using aluminium-tri-sec-butoxide

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1993-01-01

    The metal organic chemical vapour deposition (MOCVD) of amorphous alumina films on steel was performed in nitrogen at atmospheric pressure. This MOCVD process is based on the thermal decomposition of aluminium-tri-sec-butoxide (ATSB). The effect of the deposition temperature (within the range 290–42

  9. Effect of chemical treatment on surface characteristics of sputter deposited Ti-rich NiTi shape memory alloy thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K., E-mail: drsudhirsharma@gmail.com; Mohan, S.

    2014-04-01

    Graphical abstract: FTIR spectra recorded for sputter deposited (a) untreated and (b) chemically treated NiTi SMA thin-films. - Highlights: • The effect of chemical treatment on surface properties of NiTi films demonstrated. • Chemically treated films offer strong ability to form protective TiO{sub 2} layer. • TiO{sub 2} layer formation offer great application prospects in biomedical fields. - Abstract: NiTi thin-films were deposited by DC magnetron sputtering from single alloy target (Ni/Ti:45/55 at.%). The rate of deposition and thickness of sputter deposited films were maintained to ∼35 nm min{sup −1} and 4 μm respectively. A set of sputter deposited NiTi films were selected for specific chemical treatment with the solution comprising of de-ionized water, HF and HNO{sub 3} respectively. The influence of chemical treatment on surface characteristics of NiTi films before and after chemical treatment was investigated for their structure, micro-structure and composition using different analytical techniques. Prior to chemical treatment, the composition of NiTi films using energy dispersive X-ray dispersive spectroscopy (EDS), were found to be 51.8 atomic percent of Ti and 48.2 atomic percent of Ni. The structure and morphology of these films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD investigations, demonstrated the presence of dominant Austenite (1 1 0) phase along with Martensite phase, for untreated NiTi films whereas some additional diffraction peaks viz. (1 0 0), (1 0 1), and (2 0 0) corresponding to Rutile and Anatase phase of Titanium dioxide (TiO{sub 2}) along with parent Austenite (1 1 0) phase were observed for chemically treated NiTi films. FTIR studies, it can be concluded that chemically treated films have higher tendency to form metal oxide/hydroxide than the untreated NiTi films. XPS investigations, demonstrated the presence of Ni-free surface and formation of a protective metal oxide (TiO{sub 2

  10. Study on CexLa1-xO2 Buffer Layer used in Coated Conductors by Chemical Solution Method

    DEFF Research Database (Denmark)

    Zhao, Yue; Suo, Hongli; Grivel, Jean-Claude

    2009-01-01

    Developing multi-functional single buffer layer is one of the most important challenges for simplification of coated conductors configuration. Ladoped CeO2 films were prepared by chemical solution method. And surface morphology and texture quality of the La-doped CeO2 films were investigated...... method. It suggects that Ce0.9La0.1O2 film prepared by chemical solution route have a promising prospect for the simplification of coated conductors configuration....... in details. The results show that the as-obtained pore-free Ce0.9La0.1O2 film are epitaxially deposited on the textured NiW substrate. The 120nm thickness Ce0.9La0.1O2 film is obtained though multi-coating route. The YBCO film with Tco=90.5K, which is deposited on Ce0.9La0.1O2/NiW metallic template by PLD...

  11. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  12. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dabirian, Ali [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Kuzminykh, Yury, E-mail: yury.kuzminykh@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Wagner, Estelle; Benvenuti, Giacomo [3D-Oxides, 70 Rue G. Eiffel Technoparc, 01630 St Genis Pouilly (France); ABCD Technology, 12 route de Champ-Colin, 1260 Nyon (Switzerland); Rushworth, Simon [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork (Ireland); Hoffmann, Patrik, E-mail: patrik.hoffmann@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland)

    2014-11-28

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb{sub 2}(OEt){sub 10} does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt){sub 5} acts as an octahedral field completing entity and leads to Nb(OEt){sub 4}(dmae). We show that Nb(OEt){sub 4}(dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h{sup −1} to values larger than 400 nm·h{sup −1} can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt){sub 4}(dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt){sub 4}(dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an

  13. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

    Energy Technology Data Exchange (ETDEWEB)

    Knorr Jr, Daniel B., E-mail: daniel.knorr.civ@mail.mil [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Williams, Kristen S. [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Baril, Neil F. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Weiland, Conan [National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America (United States); Andzelm, Jan W. [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Lenhart, Joseph L., E-mail: joseph.l.lenhart.civ@mail.mil [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Woicik, Joseph C.; Fischer, Daniel A. [National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America (United States); Tidrow, Meimei Z.; Bandara, Sumith V. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Henry, Nathan C. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Corbin Company, Alexandria, VA 22314, United States of America (United States)

    2014-11-30

    Graphical abstract: - Highlights: • HCl and citric acid showed excellent oxide removal on III/V surfaces. • Aminosilane (APTES) passivation coatings were deposited at 1–20 nm on InAs and GaSb. • These coatings showed high ionic nitrogen levels near the interface via XPS. • DFT was used to find adsorption energies of APTES with and without -OH groups. • DFT modeling showed APTES–NH{sub 3}{sup +} hydrogen abstraction to form surface -OH groups. - Abstract: Focal plane arrays of strained layer superlattices (SLSs) composed of InAs/GaSb are excellent candidates for infrared imaging, but one key factor limiting their utility is the lack of a surface passivation technique capable of protecting the mesa sidewall from degradation. Along these lines, we demonstrate the use of aqueous 3-aminopropyl triethoxysilane (APTES) deposited as a surface functionalizing agent for subsequent polymer passivation on InAs and GaSb surfaces following a HCl/citric acid procedure to remove the conductive oxide In{sub 2}O{sub 3}. Using atomic force microscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and modeling with density functional theory (DFT), we demonstrate that APTES films can successfully be deposited on III-V substrates by spin coating and directly compare these films to those deposited on silicon substrates. The HCl/citric acid surface preparation treatment is particularly effective at removing In{sub 2}O{sub 3} without the surface segregation of In oxides observed from use of HCl alone. However, HCl/citric acid surface treatment method does result in heavy oxidation of both Ga and Sb, accompanied by segregation of Ga oxide to the surface. Deposited APTES layer thickness did not depend on the substrate choice, and thicknesses between 1 and 20 nm were obtained for APTES solution concentrations ranging from 0.1 to 2.5 vol %. XPS results for the N1s band of APTES showed that

  14. MgB2 superconducting whiskers synthesized by using the hybrid physical-chemical vapor deposition.

    Science.gov (United States)

    Wang, Yazhou; Zhuang, Chenggang; Gao, Jingyun; Shan, Xudong; Zhang, Jingmin; Liao, Zhimin; Xu, Hongjun; Yu, Dapeng; Feng, Qingrong

    2009-02-25

    In this work, MgB(2) whiskers were fabricated on a copper substrate by using the hybrid physical-chemical vapor deposition, which was one of the most effective ways to make high quality pure MgB(2) films, with the possible growth mechanism discussed. The whiskers are hexagonal and conelike and grow along the [0001] direction with a single-crystal structure. The onset transition temperature is approximately 39 K, which is among the best in the published nanostructure MgB(2) papers. Fabrication of nanoscale MgB(2) whiskers provides the fundamental understanding of the effect of dimensionality and size on superconductivity.

  15. Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

    Science.gov (United States)

    Andrade, E.; García, V. M.; Nair, P. K.; Nair, M. T. S.; Zavala, E. P.; Huerta, L.; Rocha, M. F.

    2000-03-01

    Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of Cu xSe thin film to Cu 2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

  16. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

    Science.gov (United States)

    Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

    2016-07-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  17. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

    OpenAIRE

    Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

    2016-01-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parame...

  18. Magnetic property and recording performance of chemical deposition CoP thin films

    Institute of Scientific and Technical Information of China (English)

    2012-01-01

    The thickness of CoP thin films prepared by wet chemical deposition is of crucial importance on magnetic property and recording perform-ance. The coercivity of CoP films decreased with increasing film thickness. The coercivity was 45.37 kA m 1 at the thickness of 300 nm, and decreased to 21.65 kA m 1 at 5.7 μm. Recording performance tests indicate that, for drums with the same size, different recorded magnetic pole density have different thickness requirements. For 40 mm diameter magnetic drum, the optimal ...

  19. Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom. The characterization results by the scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy indicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 -m, and the carbon nanotubes are mainly restrained within the channels of templates.

  20. Growth of straight carbon nanotubes by simple thermal chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    ZOU Xiao-ping; H. ABE; T. SHIMIZU; A. ANDO; H. TOKUMOTO; ZHU Shen-ming; ZHOU Hao-shen

    2006-01-01

    Straight carbon nanotubes (CNTs) were achieved by simple thermal chemical vapor deposition(STCVD) catalyzed by Mo-Fe alloy catalyst on silica supporting substrate at 700 ℃. High-resolution transmission electron microscopy images show that the straight CNTs are well graphitized with no attached amorphous carbon. Mo-Fe alloy catalyst particles play a very crucial role in the growth of straight CNTs. The straight carbon nanotubes contain much less defects than the curved nanotubes and might have potential applications for nanoelectrical devices in the future. The simple synthesis of straight CNTs may have benefit for large-scale productions.

  1. High-purity cobalt thin films with perpendicular magnetic anisotropy prepared by chemical vapor deposition

    Science.gov (United States)

    Ootera, Yasuaki; Shimada, Takuya; Kado, Masaki; Quinsat, Michael; Morise, Hirofumi; Nakamura, Shiho; Kondo, Tsuyoshi

    2015-11-01

    A study of the chemical vapor deposition (CVD) of high-purity cobalt thin films is described. The Co layer prepared by a thermal CVD technique with a Pt/Ta underlayer and a Pt cap layer shows a saturation magnetization (Ms) of ∼1.8 T and perpendicular magnetic anisotropy (PMA) with an anisotropy energy (Ku) of ∼105 J/m3. The cobalt thickness dependence of Ku reveals that the interfacial anisotropy at the Pt/Co interface is most likely the origin of the obtained PMA.

  2. Studies on non-oxide coating on carbon fibers using plasma enhanced chemical vapor deposition technique

    Science.gov (United States)

    Patel, R. H.; Sharma, S.; Prajapati, K. K.; Vyas, M. M.; Batra, N. M.

    2016-05-01

    A new way of improving the oxidative behavior of carbon fibers coated with SiC through Plasma Enhanced Chemical Vapor Deposition technique. The complete study includes coating of SiC on glass slab and Stainless steel specimen as a starting test subjects but the major focus was to increase the oxidation temperature of carbon fibers by PECVD technique. This method uses relatively lower substrate temperature and guarantees better stoichiometry than other coating methods and hence the substrate shows higher resistance towards mechanical and thermal stresses along with increase in oxidation temperature.

  3. High efficiency AIGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition

    OpenAIRE

    Tetsuo, Soga; T.", "Kato; M., Yang; Masayoshi, Umeno; Takashi, Jimbo

    1995-01-01

    The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active‐area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active‐area conversion efficiency of 19.9%...

  4. Synthesis and oxidation behavior of boron-substituted carbon powders by hot filament chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Boron-substituted carbon powder, BxC1-x with x up to 0.17, has been successfully synthesized by hot filament chemical vapor deposition. The boron concentration in prepared BxC1-x samples can be controlled by varying the relative proportions of methane and diborane. X-ray diffraction, transmission electron microscopy, and electron energy loss spectrum confirm the successful synthesis of an amorphous BC5 compound, which consists of 10―20 nm particles with disk-like morphology. Thermogravimetry measurement shows that BC5 compound starts to oxidize ap-proximately at 620℃ and has a higher oxidation resistance than carbon.

  5. Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

    KAUST Repository

    Qaisi, Ramy M.

    2013-04-01

    Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.

  6. Structural, optical and electrical properties of chemically deposited copper selenide films

    Indian Academy of Sciences (India)

    R H Bari; V Ganesan; S Potadar; L A Patil

    2009-02-01

    Stoichiometric and nonstoichiometric thin films of copper selenide have been prepared by chemical bath deposition technique at temperature below 60°C on glass substrate. The effect of nonstoichiometry on the optical, electrical and structural properties of the film was studied. The bandgap energy was observed to increase with the increase in at % of copper in composition. The grain size was also observed to increase with the decrease of at % of copper in composition. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), absorption spectroscopy, and AFM. The results are discussed and interpreted.

  7. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Directory of Open Access Journals (Sweden)

    Narendra Acharya

    2016-08-01

    Full Text Available In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc and high critical current density (Jc. The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  8. Electro-chemical deposition of zinc oxide nanostructures by using two electrodes

    Directory of Open Access Journals (Sweden)

    B. A. Taleatu

    2011-09-01

    Full Text Available One of the most viable ways to grow nanostructures is electro deposition. However, most electrodeposited samples are obtained by three-electrode electrochemical cell. We successfully use a much simpler two-electrode cell to grow different ZnO nanostructures from common chemical reagents. Concentration, pH of the electrolytes and growth parameters like potentials at the electrodes, are tailored to allow fast growth without complexity. Morphology and surface roughness are investigated by Scanning Electron and Air Force Microscopy (SEM and AFM respectively, crystal structure by X-Ray Diffraction measurements (XRD and ZnO stoichiometry by core level photoemission spectroscopy (XPS.

  9. Synthesis and characterization of well-aligned carbon nitrogen nanotubes by microwave plasma chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Well-aligned carbon nitrogen nanotube films have been synthesized successfully on mesoporous silica substrates by microwave plasma chemical vapor deposition (MWPCVD) method. Studies on their morphology, structure, and composition by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX), respectively, indicate that these nanotubes consist of linearly polymerized carbon nitrogen nanobells, and the nitrogen atoms have been doped into carbon netweork to form a new structure C1-xNx (x=0.16±0.01). X-ray photoelectron spectroscopy (XPS) results of the samples further demonstrate that carbon bonds covalently with nitrogen in all the carbon nitrogen nanotube films.

  10. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Science.gov (United States)

    Acharya, Narendra; Wolak, Matthäus A.; Tan, Teng; Lee, Namhoon; Lang, Andrew C.; Taheri, Mitra; Cunnane, Dan; Karasik, Boris. S.; Xi, X. X.

    2016-08-01

    In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc) and high critical current density (Jc). The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  11. An Investigation on the Formation of Carbon Nanotubes by Two-Stage Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. S. Shamsudin

    2012-01-01

    Full Text Available High density of carbon nanotubes (CNTs has been synthesized from agricultural hydrocarbon: camphor oil using a one-hour synthesis time and a titanium dioxide sol gel catalyst. The pyrolysis temperature is studied in the range of 700–900°C at increments of 50°C. The synthesis process is done using a custom-made two-stage catalytic chemical vapor deposition apparatus. The CNT characteristics are investigated by field emission scanning electron microscopy and micro-Raman spectroscopy. The experimental results showed that structural properties of CNT are highly dependent on pyrolysis temperature changes.

  12. Size dependent optical characteristics of chemically deposited nanostructured ZnS thin films

    Indian Academy of Sciences (India)

    A U Ubale; V S Sangawar; D K Kulkarni

    2007-04-01

    ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S2- and Zn2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the wavelength range 250–750 nm show that band gap energy of ZnS increases from 3.68–4.10 eV as thickness varied from 332–76 nm. The structural estimation shows variation in grain size from 6.9–17.8 nm with thickness. The thermoemf measurement indicates that films prepared by this method are of -type.

  13. NiS/ZnS multilayer thinfilm prepared by chemical bath deposition method

    Science.gov (United States)

    Yuvaloshini, J.; Ravi, G.; Shanmugavadivu, Ra.

    2013-06-01

    NiS/ZnS multilayer thin films were prepared by Chemical Bath Deposition (CBD) technique by successive coatings of nickel, zinc and sulphur. The X-ray diffraction was used to obtain structural characterization for the multilayer thinfilms, the crystalline size of 50 nm. The Scanning Electron Microscope techniques were employed to study the internal structure and indentified as of hexagonal structure. An EDAX spectrum confirms the compositional analysis of nickel, zinc and sulphur in nominal composition. The photoluminescence behaviour of NiS/ZnS multilayered system consists in the superposition independent photoluminescence emission in blue shift.

  14. Development of Diffusion barrier coatings and Deposition Technologies for Mitigating Fuel Cladding Chemical Interactions (FCCI)

    Energy Technology Data Exchange (ETDEWEB)

    Sridharan, Kumar; Allen, Todd; Cole, James

    2013-02-27

    The goal of this project is to develop diffusion barrier coatings on the inner cladding surface to mitigate fuel-cladding chemical interaction (FCCI). FCCI occurs due to thermal and radiation enhanced inter-diffusion between the cladding and fuel materials, and can have the detrimental effects of reducing the effective cladding wall thickness and lowering the melting points of the fuel and cladding. The research is aimed at the Advanced Burner Reactor (ABR), a sodium-cooled fast reactor, in which higher burn-ups will exacerbate the FCCI problem. This project will study both diffusion barrier coating materials and deposition technologies. Researchers will investigate pure vanadium, zirconium, and titanium metals, along with their respective oxides, on substrates of HT-9, T91, and oxide dispersion-strengthened (ODS) steels; these materials are leading candidates for ABR fuel cladding. To test the efficacy of the coating materials, the research team will perform high-temperature diffusion couple studies using both a prototypic metallic uranium fuel and a surrogate the rare-earth element lanthanum. Ion irradiation experiments will test the stability of the coating and the coating-cladding interface. A critical technological challenge is the ability to deposit uniform coatings on the inner surface of cladding. The team will develop a promising non-line-of-sight approach that uses nanofluids . Recent research has shown the feasibility of this simple yet novel approach to deposit coatings on test flats and inside small sections of claddings. Two approaches will be investigated: 1) modified electrophoretic deposition (MEPD) and 2) boiling nanofluids. The coatings will be evaluated in the as-deposited condition and after sintering.

  15. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  16. Studies on preparation and characterization of indium doped zinc oxide films by chemical spray deposition

    Indian Academy of Sciences (India)

    Benny Joseph; P K Manoj; V K Vaidyan

    2005-08-01

    The preparation of indium doped zinc oxide films is discussed. Variation of structural, electrical and optical properties of the films with zinc acetate concentration and indium concentration in the solution are investigated. XRD studies have shown a change in preferential orientation from (002) to (101) crystal plane with increase in indium dopant concentration. Films deposited at optimum conditions have a low resistivity of 1.33 × 10-4 m with 94% transmittance at 550 nm. SEM studies have shown smooth polycrystalline morphology of the films. Figure of merit is evaluated from electrical resistivity and transmittance data.

  17. Structure and chemical characteristics of natural mineral deposit Terbunskaya (Lipetsk region, Russia)

    Energy Technology Data Exchange (ETDEWEB)

    Motyleva, S., E-mail: motyleva-svetlana@mail.ru; Mertvishcheva, M. [All-Russian Horticular Institute for Breeding, Agrotechnology and Nursery Russian Academy of Agricultural Sciences, Moskow (Russian Federation); Shchuchka, R.; Gulidova, V. [Yelets state university named after I. A. Bunin, Yelets (Russian Federation)

    2015-07-22

    New knowledge about the mineralogical features Terbunsky mineral. Investigated 5 fractions isolated from the incision (2-2,5 m). Terbunskaya deposit belongs to minerals Santonian age. Scanning electron microscopy and energy dispersive analysis of fractions isolated studied in detail. In the coarse fractions found ancient organic remains of algae and micro-organisms that have been sedimented together with the mineral component during geological periods. The share of organic inclusions does not exceed 1.5%. Chemical composition confirms the presence of silicon and carbonate organisms. Advantageously proportion of minerals having a layered structure with a plurality of micro and nano pore size 600 - 80-nm and an average chemical composition (wt%): Na (0,64), Mg (0,54), Al (13.48), Si (27 57), K (2.39) Ca (0.75)

  18. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan

    2016-10-31

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

  19. Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD with TEOS/N2/O2

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2013-12-01

    Full Text Available The purpose of this study was to examine how certain parameters like temperature, pressure, and gas composition affect the characteristics of SiO2 film by Plasma Enhanced Chemical Vapor Deposition (PECVD. We used of low temperature and an inductively coupled plasma (ICP for various with gas mixtures of TEOS/N2/O2 at a given RF power and dc bias voltage. For the gas mixture with 40 sccm of N2 in TEOS, 100 standard cubic centimeters per minute (sccm of N2, and 500 sccm of O2, transparent and scratch-resistant SiO2 could be deposited with a deposition rate of 30 nm/min when RF power of 500 W and a dc-bias voltage of 350V were applied. The characteristics of the deposited SiO2, such as the composition, the binding energy, etc. were compared with the SiO2 deposited by using thermal CVD and evaporation. It was found that the SiO2 deposited by PECVD with TEOS/N2/O2 exhibited properties typical of SiO2 deposited applying thermal CVD and evaporation. The surface roughness of the 100 nm-thick SiO2 deposited by PECVD was similar to that of the substrate.

  20. Properties of silicon nitride thin overlays deposited on optical fibers — Effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactor

    Energy Technology Data Exchange (ETDEWEB)

    Śmietana, M., E-mail: M.Smietana@elka.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662 (Poland); Dominik, M.; Myśliwiec, M.; Kwietniewski, N. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662 (Poland); Mikulic, P. [Centre de Recherche en Photonique, Université du Québec en Outaouais, 101 rue Saint-Jean-Bosco, Gatineau, J8X 3X7, Québec (Canada); Witkowski, B.S. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw 02-666 (Poland); Bock, W.J. [Centre de Recherche en Photonique, Université du Québec en Outaouais, 101 rue Saint-Jean-Bosco, Gatineau, J8X 3X7, Québec (Canada)

    2016-03-31

    This work discusses the effect of sample suspension in radio frequency plasma-enhanced chemical vapor deposition process on properties of the obtained overlays. Silicon nitride (SiN{sub x}) overlays were deposited on flat silicon wafers and cylindrical fused silica optical fibers. The influence of the suspension height and fiber diameter on SiN{sub x} deposition rate is investigated. It has been found that thickness of the SiN{sub x} overlay significantly increases with suspension height, and the deposition rate depends on fiber dimensions. Moreover, the SiN{sub x} overlays were also deposited on long-period gratings (LPGs) induced in optical fiber. Measurements of the LPG spectral response combined with its numerical simulations allowed for a discussion on properties of the deposited overlay. The measurements have proven higher overlay deposition rate on the suspended fiber than on flat Si wafer placed on the electrode. Results of this work are essential for precise tuning of the functional properties of new generations of optical devices such as optical sensors, filters and resonators, which typically are based on optical fibers and require the overlays with well defined properties. - Highlights: • The effect of optical fiber suspension in plasma process is discussed. • The deposition rate of silicon nitride (SiN{sub x}) overlay depends on fiber dimensions. • Thickness of the SiN{sub x} overlay strongly increases with suspension height. • Measurements and simulations of long-period grating confirms experimental results.

  1. Melanin-containing films: growth from dopamine solutions versus layer-by-layer deposition.

    Science.gov (United States)

    Bernsmann, Falk; Ersen, Ovidiu; Voegel, Jean-Claude; Jan, Edward; Kotov, Nicholas A; Ball, Vincent

    2010-10-25

    Films formed by oxidation of dopamine are of interest for functionalisation of solid-liquid interfaces owing to their versatility. However, the ability to modulate the properties of such films, for example, permeability to ionic species and the absorption coefficient, is urgently needed. Indeed, melanin films produced by oxidation of dopamine absorb strongly over the whole UV/Vis part of the electromagnetic spectrum and are impermeable to anions even for a film thickness as low as a few nanometers. Herein we combine oxidation of dopamine to produce a solution containing dopamine-melanin particles and their alternating deposition with poly(diallyldimethylammonium chloride) to produce films which have nearly the same morphology as pure dopamine-melanin films but are less compact, more transparent and more permeable to ferrocyanide anions.

  2. Particle size analysis of prepared solutions and fingerprint deposits of high explosive materials

    Energy Technology Data Exchange (ETDEWEB)

    Carmack, W.J.; Hembree, P.B.

    1998-03-01

    The Idaho National Engineering and Environmental Laboratory (INEEL) managed and operated by Lockheed Martin Idaho Technologies Company (LMITCO) was tasked via the Federal Aviation Administration (FAA) and US Department of Energy (DOE) to conduct various studies involving the detection and measurement of explosive materials and their associated residues. This report details the results of an investigation to determine the particle size characteristics of the explosive materials used in the design, development, and testing of trace explosives detection systems. These materials, in the form of water suspensions of plastic explosives, are used to provide a quantitative means of monitoring the performance characteristics of the detection systems. The purpose of this investigation is to provide data that allows a comparison between the particles deposited using the suspension standards and the particles deposited from fingerprints. This information may support the development of quality control aids, measurement methods, or performance criteria specifications for the use of trace explosives detection systems. For this report, particle size analyses were completed on explosives standard suspensions/solutions for composition C-4, Semtex-H, and Detasheet and fingerprints for C-4, Detasheet, and pentolite. Because of the difficulty in collecting microscopic images of the particles in the suspensions from test protocol surfaces, this paper discusses the characteristics of the particles as they are found on metal, glass, and paper. The results of the particle characterization analyses indicate that the water suspensions contain particulate composed of binder materials and dissolved portions of the explosive compounds. Upon drying of the water suspensions, significant particle nucleation and growth is observed. The nucleated particulate is comparable to the particulate deposited by fingerprints.

  3. Computational Protocols for Prediction of Solute NMR Relative Chemical Shifts

    DEFF Research Database (Denmark)

    Eriksen, Janus Juul; Olsen, Jógvan Magnus Haugaard; Aidas, Kestutis;

    2011-01-01

    In this study, we have applied two different spanning protocols for obtaining the molecular conformations of L-tryptophan in aqueous solution, namely a molecular dynamics simulation and a molecular mechanics conformational search with subsequent geometry re-optimization of the stable conformers...... using a quantum mechanically based method. These spanning protocols represent standard ways of obtaining a set of conformations on which NMR calculations may be performed. The results stemming from the solute–solvent configurations extracted from the MD simulation at 300 K are found to be inferior...

  4. PLD deposition of tungsten carbide contact for diamond photodiodes. Influence of process conditions on electronic and chemical aspects

    Science.gov (United States)

    Cappelli, E.; Bellucci, A.; Orlando, S.; Trucchi, D. M.; Mezzi, A.; Valentini, V.

    2013-08-01

    Tungsten carbide, WC, contacts behave as very reliable Schottky contacts for opto-electronic diamond devices. Diamond is characterized by superior properties in high-power, high frequency and high-temperature applications, provided that thermally stable electrode contacts will be realized. Ohmic contacts can be easily achieved by using carbide-forming metals, while is difficult to get stable Schottky contacts at elevated temperatures, due to the interface reaction and/or inter-diffusion between metals and diamond. Novel type of contacts, made of tungsten carbide, WC, seem to be the best solution, for their excellent thermal stability, high melting point, oxidation and radiation resistance and good electrical conductivity. Our research was aimed at using pulsed laser deposition for WC thin film deposition, optimizing experimental parameters, to obtain a final device characterized by excellent electronic properties, as a detector for radiation in deep UV or as X-ray dosimeter. We deposited our films by laser ablation from a target of pure WC, using different reaction conditions (i.e., substrate heating, vacuum or reactive atmosphere (CH4/Ar), RF plasma activated), to optimize both the stoichiometry of the film and its structure. Trying to obtain a material with the best electronic response, we used also two sources of laser radiation for target ablation, i.e., nano-second pulsed excimer laser ArF, and ultra-short fs Ti:Sapphire laser. The structure and chemical aspects have been evaluated by Raman and X-ray photoelectron spectroscopy (XPS), while the dosimeter photodiode response has been tested by the I-V measurements, under soft X-ray irradiation.

  5. PLD deposition of tungsten carbide contact for diamond photodiodes. Influence of process conditions on electronic and chemical aspects

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, E., E-mail: emilia.cappelli@imip.cnr.it [CNR-IMIP, Montelibretti, via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-IMIP, Montelibretti, via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Orlando, S. [CNR-IMIP sez. Potenza, 85050 Tito Scalo, Potenza (Italy); Trucchi, D.M. [CNR-IMIP, Montelibretti, via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Mezzi, A. [CNR-ISMN, Montelibretti, via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Valentini, V. [CNR-IMIP, Montelibretti, via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

    2013-08-01

    Tungsten carbide, WC, contacts behave as very reliable Schottky contacts for opto-electronic diamond devices. Diamond is characterized by superior properties in high-power, high frequency and high-temperature applications, provided that thermally stable electrode contacts will be realized. Ohmic contacts can be easily achieved by using carbide-forming metals, while is difficult to get stable Schottky contacts at elevated temperatures, due to the interface reaction and/or inter-diffusion between metals and diamond. Novel type of contacts, made of tungsten carbide, WC, seem to be the best solution, for their excellent thermal stability, high melting point, oxidation and radiation resistance and good electrical conductivity. Our research was aimed at using pulsed laser deposition for WC thin film deposition, optimizing experimental parameters, to obtain a final device characterized by excellent electronic properties, as a detector for radiation in deep UV or as X-ray dosimeter. We deposited our films by laser ablation from a target of pure WC, using different reaction conditions (i.e., substrate heating, vacuum or reactive atmosphere (CH{sub 4}/Ar), RF plasma activated), to optimize both the stoichiometry of the film and its structure. Trying to obtain a material with the best electronic response, we used also two sources of laser radiation for target ablation, i.e., nano-second pulsed excimer laser ArF, and ultra-short fs Ti:Sapphire laser. The structure and chemical aspects have been evaluated by Raman and X-ray photoelectron spectroscopy (XPS), while the dosimeter photodiode response has been tested by the I–V measurements, under soft X-ray irradiation.

  6. Quantifying solute transport processes: are chemically "conservative" tracers electrically conservative?

    Science.gov (United States)

    Singha, Kamini; Li, Li; Day-Lewis, Frederick D.; Regberg, Aaron B.

    2012-01-01

    The concept of a nonreactive or conservative tracer, commonly invoked in investigations of solute transport, requires additional study in the context of electrical geophysical monitoring. Tracers that are commonly considered conservative may undergo reactive processes, such as ion exchange, thus changing the aqueous composition of the system. As a result, the measured electrical conductivity may reflect not only solute transport but also reactive processes. We have evaluated the impacts of ion exchange reactions, rate-limited mass transfer, and surface conduction on quantifying tracer mass, mean arrival time, and temporal variance in laboratory-scale column experiments. Numerical examples showed that (1) ion exchange can lead to resistivity-estimated tracer mass, velocity, and dispersivity that may be inaccurate; (2) mass transfer leads to an overestimate in the mobile tracer mass and an underestimate in velocity when using electrical methods; and (3) surface conductance does not notably affect estimated moments when high-concentration tracers are used, although this phenomenon may be important at low concentrations or in sediments with high and/or spatially variable cation-exchange capacity. In all cases, colocated groundwater concentration measurements are of high importance for interpreting geophysical data with respect to the controlling transport processes of interest.

  7. Predicting of bactericidal activity of chemical disinfectants using disinfection activity coefficient of solution

    OpenAIRE

    Gjorgjeska, Biljana

    2011-01-01

    There is the need for defining standard technique for quantitative determination of bactericidal activity of chemical disinfectant substances, as well as the need for defining parameter for comparing various chemical disinfectants. The methods which are usually used for evaluation of antiseptic activity of disinfectant aqueous solutions are microbiological.

  8. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  9. Enhancement of the electrical properties of graphene grown by chemical vapor deposition via controlling the effects of polymer residue.

    Science.gov (United States)

    Suk, Ji Won; Lee, Wi Hyoung; Lee, Jongho; Chou, Harry; Piner, Richard D; Hao, Yufeng; Akinwande, Deji; Ruoff, Rodney S

    2013-04-10

    Residual polymer (here, poly(methyl methacrylate), PMMA) left on graphene from transfer from metals or device fabrication processes affects its electrical and thermal properties. We have found that the amount of polymer residue left after the transfer of chemical vapor deposited (CVD) graphene varies depending on the initial concentration of the polymer solution, and this residue influences the electrical performance of graphene field-effect transistors fabricated on SiO2/Si. A PMMA solution with lower concentration gave less residue after exposure to acetone, resulting in less p-type doping in graphene and higher charge carrier mobility. The electrical properties of the weakly p-doped graphene could be further enhanced by exposure to formamide with the Dirac point at nearly zero gate voltage and a more than 50% increase of the room-temperature charge carrier mobility in air. This can be attributed to electron donation to graphene by the -NH2 functional group in formamide that is absorbed in the polymer residue. This work provides a route to enhancing the electrical properties of CVD-grown graphene even when it has a thin polymer coating.

  10. Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Kirlin, Peter S.; Binder, R.; Gardiner, R.; Brown, Duncan W.

    1990-03-01

    Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

  11. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J. [Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Rd., NW, Washington, DC 20015 (United States)

    2015-11-02

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  12. Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

    Institute of Scientific and Technical Information of China (English)

    C.U. Mordi; M.A. Eleruja; B.A. Taleatu; G.O. Egharevba; A.V. Adedeji; 0.0. Akinwunmi; B. Olofinjana; C. Jeynes; E.O.B. Ajayi

    2009-01-01

    The single solid source precursor, cobalt (Ⅱ) acetylacetonate was prepared and characterized by infrared spec-troscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis (metal organic chemical vapour deposition (MOCVD)) of single solid source precursor, cobalt acetylaceto-nate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction (XRD), showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2.15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron mi-croscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than 1 micron for the deposited thin films of cobalt oxide.

  13. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  14. Fluctuation theory of solutions applications in chemistry, chemical engineering, and biophysics

    CERN Document Server

    Smith, Paul E

    2013-01-01

    There are essentially two theories of solutions that can be considered exact: the McMillan-Mayer theory and Fluctuation Solution Theory (FST). The first is mostly limited to solutes at low concentrations, while FST has no such issue. It is an exact theory that can be applied to any stable solution regardless of the number of components and their concentrations, and the types of molecules and their sizes. Fluctuation Theory of Solutions: Applications in Chemistry, Chemical Engineering, and Biophysics outlines the general concepts and theoretical basis of FST and provides a range of applications

  15. Preparation of Nano-Particles (Pb,La)TiO3 Thin Films by Liquid Source Misted Chemical Deposition

    Institute of Scientific and Technical Information of China (English)

    张之圣; 曾建平; 李小图

    2004-01-01

    Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60 nm. The deposition speed is 3 nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300 ℃ for 10 min and anneal at 600 ℃ for 1 h.

  16. Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Gautron, E., E-mail: eric.gautron@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Buffière, M. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); 44solar, 14 rue Kepler, 44240 La Chapelle sur Erdre (France); Harel, S.; Assmann, L.; Arzel, L.; Brohan, L. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Kessler, J. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); 44solar, 14 rue Kepler, 44240 La Chapelle sur Erdre (France); Barreau, N. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2013-05-01

    The present work aims at investigating the microstructure of Zn(O,S) buffer layers relative to their deposition route, namely either chemical bath deposition (CBD) or RF co-sputtering process (PVD) under pure Ar. The core of the study consists of cross-sectional transmission electron microscopy (TEM) characterization of the differently grown Zn(O,S) thin films on co-evaporated Cu(In,Ga)Se{sub 2} (CIGSe) absorbers. It shows that the morphology of Zn(O,S) layer deposited on CIGSe using CBD process is made of a thin layer of well oriented ZnS sphalerite-(111) and/or ZnS wurtzite-(0002) planes parallel to CIGSe chalcopyrite-(112) planes at the interface with CIGSe followed by misoriented nanometer-sized ZnS crystallites in an amorphous phase. As far as (PVD)Zn(O,S) is concerned, the TEM analyses reveal two different microstructures depending on the S-content in the films: for [S] / ([O] + [S]) = 0.6, the buffer layer is made of ZnO zincite and ZnS wurtzite crystallites grown nearly coherently to each other, with (0002) planes nearly parallel with CIGSe-(112) planes, while for [S] / ([O] + [S]) = 0.3, it is made of ZnO zincite type crystals with O atoms substituted by S atoms, with (0002) planes perfectly aligned with CIGSe-(112) planes. Such microstructural differences can explain why photovoltaic performances are dependent on the Zn(O,S) buffer layer deposition route. - Highlights: ► Zn(O,S) layers were grown by chemical bath (CBD) or physical vapor (PVD) deposition. ► For CBD, a 3 nm ZnS layer is followed by ZnS nano-crystallites in an amorphous phase. ► For PVD with [S] / ([O] + [S]) = 0.3, the layer has a Zn(O,S) zincite structure. ► For PVD with [S] / ([O] + [S]) = 0.6, ZnS wurtzite and ZnO zincite phases are mixed.

  17. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    Science.gov (United States)

    Stern, E.; Cheng, G.; Guthrie, S.; Turner-Evans, D.; Broomfield, E.; Lei, B.; Li, C.; Zhang, D.; Zhou, C.; Reed, M. A.

    2006-06-01

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 °C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs.

  18. Deposition of carbon nanotubes onto aramid fibers using as-received and chemically modified fibers

    Science.gov (United States)

    Rodríguez-Uicab, O.; Avilés, F.; Gonzalez-Chi, P. I.; Canché-Escamilla, G.; Duarte-Aranda, S.; Yazdani-Pedram, M.; Toro, P.; Gamboa, F.; Mazo, M. A.; Nistal, A.; Rubio, J.

    2016-11-01

    Multiwall carbon nanotubes (MWCNTs) oxidized by an acid treatment were deposited on the surface of as-received commercial aramid fibers containing a surface coating ("sizing"), and fibers modified by either a chlorosulfonic treatment or a mixture of nitric and sulfuric acids. The surface of the aramid fiber activated by the chemical treatments presents increasing density of CO, COOH and OH functional groups. However, these chemical treatments reduced the tensile mechanical properties of the fibers, especially when the nitric and sulfuric acid mixture was used. Characterization of the MWCNTs deposited on the fiber surface was conducted by scanning electron microscopy, Raman spectroscopy mapping and X-ray photoelectron spectroscopy. These characterizations showed higher areal concentration and more homogeneous distribution of MWCNTs over the aramid fibers for as-received fibers and for those modified with chlorosulfonic acid, suggesting the existence of interaction between the oxidized MWCNTs and the fiber coating. The electrical resistance of the MWCNT-modified aramid yarns comprising ∼1000 individual fibers was in the order of MΩ/cm, which renders multifunctional properties.

  19. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Science.gov (United States)

    Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

    2016-04-01

    In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

  20. Comprehensive optical studies on SnS layers synthesized by chemical bath deposition

    Science.gov (United States)

    Gedi, Sreedevi; Minnam Reddy, Vasudeva Reddy; Park, Chinho; Chan-Wook, Jeon; Ramakrishna Reddy, K. T.

    2015-04-01

    A simple non-vacuum and cost effective wet chemical technique, chemical bath deposition was used to prepare tin sulphide (SnS) layers on glass substrates. The layers were formed by varying bath temperature in the range, 40-80 °C, keeping other deposition parameters as constant. An exhaustive investigation on their optical properties with bath temperature was made using the transmittance and reflectance measurements. The absorption coefficient was evaluated from the optical transmittance data utilizing Lambert's principle and is >104 cm-1 for all the as-prepared layers. The energy band gap of the layers was determined from the differential reflectance spectra that varied from 1.41 eV to 1.30 eV. Consequently, refractive index and extinction coefficient were obtained from Pankov relations and dispersion constants were calculated using Wemple-Didomenico method. In addition, other optical parameters such as the optical conductivity, dielectric constants, dissipation factor, high frequency dielectric constant and relaxation time were also calculated. Finally electrical parameters such as resistivity, carrier mobility and carrier density of as-prepared layers were estimated using optical data. A detailed analysis of the dependence of all above mentioned parameters on bath temperature is reported and discussed for a clean understanding of electronic characteristics of SnS layers.

  1. Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

    Science.gov (United States)

    Miyoshi, Kazuhisa

    2000-01-01

    The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

  2. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    A I Oliva; J E Corona; R Patiño; A I Oliva-Avilés

    2014-04-01

    Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical properties of CdS films were investigated. The morphology, thickness, bandgap energy, crystalline structure and elemental composition of Zn- and Cu-doped CdS films were investigated and compared to the undoped CdS films properties. Both Zn- and Cu-doped CdS films presented a cubic crystalline structure with (1 1 1) as the preferential orientation. Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped CdS films. Zn-doped CdS films presented higher thickness and roughness values than those of Cu-doped CdS films. From the photoluminescence results, it is suggested that the inclusion of Zn and Cu into CdS crystalline structure promotes the formation of acceptor levels above the CdS valence band, resulting in lower bandgap energy values for the doped CdS films.

  3. Magnetic and magneto-optical properties of Co-P films prepared by chemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chzhan, A.V., E-mail: avchz@mail.ru [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, Krasnoyarsk 660041 (Russian Federation); Patrin, G.S. [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, Krasnoyarsk 660041 (Russian Federation); Kiparisov, S.Ya.; Seredkin, V.A.; Burkova, L.V.; Velikanov, D.A. [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation)

    2011-10-15

    Features in the formation of chemically deposited polycrystalline Co-P films with thicknesses of a few nanometers are established by analyzing film surface morphology and variation in the film magnetization. It is shown that in the thickness range below 30 nm the polar Kerr effect value {theta}{sub K} changes nonmonotonically and depends on a wavelength of the incident light. For the films thicker than 30 nm, this value depends weakly on both the thickness and the wavelength. These features in the {theta}{sub K} behavior are attributed to the Faraday effect, which is revealed at small thicknesses upon light reflection from the lower surface of a magnetic layer. It is found that the Faraday effect in the Co-P films exceeds that in the Co films by a factor of more than two. This effect is assumed to be caused by the presence of a Pd underlayer in the samples under study. - Highlights: > Chemically deposited Co-P films are investigated. > Features of the polar Kerr effect in these films with thickness from 1 to 50 nm are considered. > It is shown that the Faraday rotation angle in the Co-P films exceeds that in the Co films by a factor of two. > Hysteresis loops and magnetization values are presented.

  4. Chemically Reactive Solute Distribution in a Steady MHD Boundary Layer Flow over a Stretching Surface

    Directory of Open Access Journals (Sweden)

    M.S Uddin

    2011-01-01

    Full Text Available The paper is concerned to find the distribution of the chemically reactant solute in the MHD flow of an electrically conducting viscous incompressible fluid over a stretching surface. The first order chemical reaction and the variable solute distribution along the surface are taken into consideration. The governing partial differential equations along with appropriate boundary conditions for flow field and reactive solute are transformed into a set of non-linear self-similar ordinary differential equations by using scaling group of transformations. An exact analytic solution is obtained for the velocity field. Using this velocity field, we obtain numerical solution for the reactant concentration field. It reveals from the study that the values of concentration profile enhances with the increase of the magnetic field and decreases with increase of Schmidt number as well as the reaction rate parameter. Most importantly, when the solute distribution along the surface increases then the concentration profile decreases.

  5. Interfacial structure of tungsten layers formed by selective low pressure chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Stacy, W.T.; Broadbent, E.K.; Norcott, M.H.

    1985-02-01

    We have analyzed the interfacial structure of selectively deposited LPCVD tungsten on monocrystalline silicon, polycrystalline silicon, and polycrystalline aluminum substrates. Cross-sectional specimens were examined by transmission electron microscopy to determine the amount of substrate consumed by the selective deposition process and to assess the degree of lateral encroachment under masking SiO/sub 2/ layers for different conditions of deposition and surface preparation. The tungsten-silicon interfacial structure was found to depend strongly on the initia surface preparation. Immersion in a dilute HF solution resulted in a smooth interface, while a glow-discharge treatment (CF/sub 4/ + O/sub 2/) led to highly irregular interfaces, which, in extreme cases, contained tunnels extending 1 ..mu..m or more into the silicon substrate. Layers formed in WF/sub 6/ plus H/sub 2/ were found to consist of two layers, of which the lower layer i formed by the substrate reduction of WF/sub 6/.

  6. Controlled growth of epitaxial CeO2 thin films with self-organized nanostructure by chemical solution method

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude

    2013-01-01

    Chemical solution deposition is a versatile technique to grow oxide thin films with self-organized nanostructures. Morphology and crystallographic orientation control of CeO2 thin films grown on technical NiW substrates by a chemical solution deposition method are achieved in this work. Based...... a fluorite structure but exhibits an alternative in-plane texture with eight fold symmetry on the surface. According to phase and texture stability studies, these off-stoichiometric phases gradually transform back to fully oxidized CeO2 with a 45° rotated cube texture during storage in ambient air. Moreover...... on an enhanced understanding of the effect of oxygen partial pressure during film crystallization, a strong texture can be obtained on the surface of the CeO2 films annealed at temperatures as low as 900 °C followed by a two-step annealing procedure. Crystallization at high temperature (e.g., 1100 °C...

  7. Chemically deposited thin films of sulfides and selenides of antimony and bismuth as solar energy materials

    Science.gov (United States)

    Nair, M. T. S.; Nair, Padmanabhan K.; Garcia, Victor M.; Pena, Y.; Arenas, O. L.; Garcia, J. C.; Gomez-Daza, O.

    1997-10-01

    Chemical bath deposition techniques for bismuth sulfide, bismuth selenide, antimony sulfide, and antimony selenide thin films of about 0.20 - 0.25 micrometer thickness are reported. All these materials may be considered as solar absorber films: strong optical absorption edges, with absorption coefficient, (alpha) , greater than 104 cm-1, are located at 1.31 eV for Bi2Se3, 1.33 eV for Bi2S3, 1.8 eV for Sb2S3, and 1.35 eV for Sb2Se3. As deposited, all the films are nearly amorphous. However, well defined crystalline peaks matching bismuthinite (JCPDS 17- 0320), paraguanajuatite (JCPDS 33-0214), and stibnite (JCPDS 6-0474) and antimony selenide (JCPDS 15-0861) for Bi2S3, Bi2Se3, Sb2S3 and Sb2Se3 respectively, are observed when the films are annealed in nitrogen at 300 degrees Celsius. This is accompanied by a substantial modification of the electrical conductivity in the films: from 10-7 (Omega) -1 cm-1 (in as prepared films) to 10 (Omega) -1 cm-1 in the case of bismuth sulfide and selenide films, and enhancement of photosensitivity in the case of antimony sulfide films. The chemical deposition of a CuS/CuxSe film on these Vx- VIy films and subsequent annealing at 300 degrees Celsius for 1 h at 1 torr of nitrogen leads to the formation of p-type films (conductivity of 1 - 100 (Omega) -1 cm-1) of multinary composition. Among these, the formation of Cu3BiS3 (JCPDS 9-0488) and Cu3SbS4 (JCPDS 35- 0581), CuSbS2 (JCPDS 35-0413) have been clearly detected. Solar energy applications of these films are suggested.

  8. Plasma enhanced chemical vapor deposition of iron doped thin dioxide films, their structure and photowetting effect

    Energy Technology Data Exchange (ETDEWEB)

    Sobczyk-Guzenda, A., E-mail: anna.sobczyk-guzenda@p.lodz.pl [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Owczarek, S.; Szymanowski, H. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Wypych-Puszkarz, A. [Department of Molecular Physics, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland); Volesky, L. [Technical University of Liberec, Institute for Nanomaterials, Advanced Technologies and Innovation, Studentska 1402/2, 461 17 Liberec 1 (Czech Republic); Gazicki-Lipman, M. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland)

    2015-08-31

    Radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique was applied for the purpose of deposition of iron doped titanium dioxide coatings from a gaseous mixture of oxygen with titanium (IV) chloride and iron (0) pentacarbonyl. Glass slides and silicon wafers were used as substrates. The coatings morphology was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental and chemical composition was studied with the help of X-ray energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy, respectively, while their phase composition was analyzed with the Raman spectroscopy. For the determination of the film optical properties, ultraviolet (UV–Vis) spectroscopy techniques were used. Iron content in the range of 0.07 to 11.5 at.% was found in the coatings. FTIR studies showed that iron was built-in in the structure of TiO{sub 2} matrix. Surface roughness, assessed with the SEM and AFM techniques, increases with an increasing content of this element. Trace amounts of iron resulted in a lowering of an absorption threshold of the films and their optical gap, but the tendency was reversed for high concentrations of that element. The effect of iron doping on UV photowettability of the films was also studied and, for coatings containing up to 5% of iron, it was stronger than that exhibited by pure TiO{sub 2}. - Highlights: • Iron doped TiO{sub 2} films were deposited with the PECVD method. • Differences of surface morphology of the films with different iron content were shown. • Depending on the iron content, the film structure is either amorphous or crystalline. • A parabolic character of the optical gap dependence on the concentration of iron was observed. • Up to a concentration of 5% of iron, doped TiO{sub 2} films exhibit a super-hydrophilic effect.

  9. Industrialization of Hot Wire Chemical Vapor Deposition for thin film applications

    Energy Technology Data Exchange (ETDEWEB)

    Schropp, R.E.I., E-mail: r.e.i.schropp@tue.nl

    2015-11-30

    The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical Vapor Deposition. The most important consequences are the technical consequences and the economic consequences, which are both discussed. The technical consequences are adaptations needed to the hardware and to the processing sequences due to the different interaction of the HWCVD process with the substrate and already deposited layers. The economic consequences are the reduced investments in radio frequency (RF) supplies and RF components. This is partially offset by investments that have to be made in higher capacity pumping systems. The most mature applications of HWCVD are moisture barrier coatings for thin film flexible devices such as Organic Light Emitting Diodes and Organic Photovoltaics, and passivation layers for multicrystalline Si solar cells, high mobility field effect transistors, and silicon heterojunction cells (also known as heterojunction cells with intrinsic thin film layers). Another example is the use of Si in thin film photovoltaics. The cost perspective per unit of thin film photovoltaic product using HWCVD is estimated at 0.07 €/Wp for the Si thin film component. - Highlights: • Review of consequences of implementing Hot Wire CVD into a manufacturing plant • Aspects of scaling up to large area and continuous manufacturing are discussed • Economic advantage of introducing a HWCVD process in a production system is estimated • Using HWCVD, the cost for the Si layers in photovoltaic products is 0.08 €/Wp.

  10. Nanofiltration and sensing of picomolar chemical residues in aqueous solution using an optical porous resonator in a microelectrofluidic channel

    Science.gov (United States)

    Huang, Lei; Guo, Zhixiong

    2012-02-01

    For the first time the use of a porous microresonator placed in a microelectrofluidic system for integrated functions of nanofiltration and sensing of small biomolecules and chemical analytes in extremely dilute solution was proposed and investigated. As an example, aminoglycosides in drug residues in food and livestock products were considered as the trace chemical analyte. The filtration process of the charged analyte in aqueous solution driven by an applied electrical field and the accompanying optical whispering-gallery modes in the resonator are modeled. The dynamic process of adsorption and desorption of the analyte onto the porous matrix is studied. Deposition of the analyte inside the porous structure will alter the material refractive index of the resonator, and thus induce an optical resonance frequency shift. By measuring the optical frequency shift, the analyte concentration as well as the absorption/desorption process can be analyzed. Through an intensive numerical study, a correlation between the frequency shift and the analyte concentration and the applied electrical voltage gradient was obtained. This reveals a linear relationship between the resonance frequency shift and the analyte concentration. The applied electrical voltage substantially enhances the filtration capability and the magnitude of the optical frequency shift, pushing the porous resonator-based sensor to function at the extremely dilute picomolar concentration level for small bio/chemical molecules down to the sub-nanometer scale. Moreover, use of the second-order whispering-gallery mode is found to provide better sensitivity compared with the first-order mode.

  11. State estimation of chemical engineering systems tending to multiple solutions

    Directory of Open Access Journals (Sweden)

    N. P. G. Salau

    2014-09-01

    Full Text Available A well-evaluated state covariance matrix avoids error propagation due to divergence issues and, thereby, it is crucial for a successful state estimator design. In this paper we investigate the performance of the state covariance matrices used in three unconstrained Extended Kalman Filter (EKF formulations and one constrained EKF formulation (CEKF. As benchmark case studies we have chosen: a a batch chemical reactor with reversible reactions whose system model and measurement are such that multiple states satisfy the equilibrium condition and b a CSTR with exothermic irreversible reactions and cooling jacket energy balance whose nonlinear behavior includes multiple steady-states and limit cycles. The results have shown that CEKF is in general the best choice of EKF formulations (even if they are constrained with an ad hoc clipping strategy which avoids undesired states for such case studies. Contrary to a clipped EKF formulation, CEKF incorporates constraints into an optimization problem, which minimizes the noise in a least square sense preventing a bad noise distribution. It is also shown that, although the Moving Horizon Estimation (MHE provides greater robustness to a poor guess of the initial state, converging in less steps to the actual states, it is not justified for our examples due to the high additional computational effort.

  12. Effect of the initial structure on the electrical property of crystalline silicon films deposited on glass by hot-wire chemical vapor deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Lee, Sang-Hoon; Bae, Sung-Hwan; Park, Hyung-Ki; Jung, Jae-Soo; Hwang, Nong-Moon

    2012-07-01

    Crystalline silicon films on an inexpensive glass substrate are currently prepared by depositing an amorphous silicon film and then crystallizing it by excimer laser annealing, rapid thermal annealing, or metal-induced crystallization because crystalline silicon films cannot be directly deposited on glass at a low temperature. It was recently shown that by adding HCI gas in the hot-wire chemical vapor deposition (HWCVD) process, the crystalline silicon film can be directly deposited on a glass substrate without additional annealing. The electrical properties of silicon films prepared using a gas mixture of SiH4 and HCl in the HWCVD process could be further improved by controlling the initial structure, which was achieved by adjusting the delay time in deposition. The size of the silicon particles in the initial structure increased with increasing delay time, which increased the mobility and decreased the resistivity of the deposited films. The 0 and 5 min delay times produced the silicon particle sizes of approximately 10 and approximately 28 nm, respectively, in the initial microstructure, which produced the final films, after deposition for 300 sec, of resistivities of 0.32 and 0.13 Omega-cm, mobilities of 1.06 and 1.48 cm2 V(-1) S(-1), and relative densities of 0.87 and 0.92, respectively.

  13. CYCLIC VOLTAMMETRY STUDIES OF COPPER (II AND TELLURIUM (IV IONS IN ACIDIC AQUEOUS SOLUTIONS FOR THIN FILM DEPOSITION

    Directory of Open Access Journals (Sweden)

    SARAVANAN NAGALINGAM

    2014-05-01

    Full Text Available Cyclic voltammetry studies of copper (II and tellurium (IV ions in acidic aqueous solutions were carried out to determine the optimum condition for copper telluride thin film deposition. The voltammetry studies include reversible scans at different solution pH. Based on the voltammogram, suitable deposition conditions was determined to be in the range of -0.35 V to -0.45 V versus Ag/AgCl at pH values between 2.0 to 2.2 under non diffusion-limited conditions.

  14. Nanostructured Thin Film Synthesis by Aerosol Chemical Vapor Deposition for Energy Storage Applications

    Science.gov (United States)

    Chadha, Tandeep S.

    Renewable energy sources offer a viable solution to the growing energy demand while mitigating concerns for greenhouse gas emissions and climate change. This has led to a tremendous momentum towards solar and wind-based energy harvesting technologies driving efficiencies higher and costs lower. However, the intermittent nature of these energy sources necessitates energy storage technologies, which remain the Achilles heel in meeting the renewable energy goals. This dissertation focusses on two approaches for addressing the needs of energy storage: first, targeting direct solar to fuel conversion via photoelectrochemical water-splitting and second, improving the performance of current rechargeable batteries by developing new electrode architectures and synthesis processes. The aerosol chemical vapor deposition (ACVD) process has emerged as a promising single-step approach for nanostructured thin film synthesis directly on substrates. The relationship between the morphology and the operating parameters in the process is complex. In this work, a simulation based approach has been developed to understand the relationship and acquire the ability of predicting the morphology. These controlled nanostructured morphologies of TiO2 , compounded with gold nanoparticles of various shapes, are used for solar water-splitting applications. Tuning of light absorption in the visible-light range along with reduced electron-hole recombination in the composite structures has been demonstrated. The ACVD process is further extended to a novel single-step synthesis of nanostructured TiO2 electrodes directly on the current collector for applications as anodes in lithium-ion batteries, mainly for electric vehicles and hybrid electric vehicles. The effect of morphology of the nanostructures has been investigated via experimental studies and electrochemical transport modelling. Results demonstrate the exceptional performance of the single crystal one-dimensional nanostructures over granular

  15. Chemical bath deposition of CdS thin films: An approach to the chemical mechanism through study of the film microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Many papers have been published lately on chemical bath deposition of CdS (CBD-CdS) thin films and related materials due to the promising results obtained using CBD-CdS for the fabrication of thin-film solar cells. In spite of this little of the research proposes a realistic chemical mechanism for the deposition process based on the determination of kinetic parameters. In this paper the authors present an exhaustive study of the CBD-CdS kinetic from which they propose a new chemical mechanism which agrees with the kinetic parameters determined supported by heterogeneous catalysis concepts. Simultaneously, the dependence of the deposited film structure on the kinetic variables is studied and the results obtained corroborate the proposed mechanism. These studies have allowed the authors to establish a standard set of conditions for the fabrication of homogeneous and continuous very thin CdS films.

  16. SiO{sub 2} coating of silver nanoparticles by photoinduced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Boies, Adam M; Girshick, Steven L [Department of Mechanical Engineering, University of Minnesota, 111 Church Street SE, Minneapolis, MN 55455 (United States); Roberts, Jeffrey T [Department of Chemistry, University of Minnesota, 207 Pleasant Street SE, Minneapolis, MN 55455 (United States); Zhang Bin; Nakamura, Toshitaka; Mochizuki, Amane, E-mail: jtrob@umn.ed, E-mail: slg@umn.ed [Nitto Denko Technical Corporation, 501 Via Del Monte, Oceanside, CA 92058 (United States)

    2009-07-22

    Gas-phase silver nanoparticles were coated with silicon dioxide (SiO{sub 2}) by photoinduced chemical vapor deposition (photo-CVD). Silver nanoparticles, produced by inert gas condensation, and a SiO{sub 2} precursor, tetraethylorthosilicate (TEOS), were exposed to vacuum ultraviolet (VUV) radiation at atmospheric pressure and varying temperatures. The VUV photons dissociate the TEOS precursor, initiating a chemical reaction that forms SiO{sub 2} coatings on the particle surfaces. Coating thicknesses were measured for a variety of operation parameters using tandem differential mobility analysis and transmission electron microscopy. The chemical composition of the particle coatings was analyzed using energy dispersive x-ray spectrometry and Fourier transform infrared spectroscopy. The highest purity films were produced at 300-400 {sup 0}C with low flow rates of additional oxygen. The photo-CVD coating technique was shown to effectively coat nanoparticles and limit core particle agglomeration at concentrations up to 10{sup 7} particles cm{sup -3}.

  17. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are

  18. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Karamat, S., E-mail: shumailakaramat@gmail.com [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); COMSATS Institute of Information Technology, Islamabad 54000 (Pakistan); Sonuşen, S. [Sabancı Üniversitesi (SUNUM), İstanbul 34956 (Turkey); Çelik, Ü. [Nanomagnetics Instruments, Ankara (Turkey); Uysallı, Y. [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); Oral, A., E-mail: orahmet@metu.edu.tr [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey)

    2016-04-15

    Graphical abstract: - Highlights: • Gr