WorldWideScience

Sample records for chemical films final

  1. Thin films under chemical stress. [Final Report], September 1, 1988--April 1, 1991

    Energy Technology Data Exchange (ETDEWEB)

    1991-12-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  2. Influence of the physical–chemical properties of polyaniline thin films on the final sensitivity of varied field effect sensors

    Energy Technology Data Exchange (ETDEWEB)

    Mello, Hugo José Nogueira Pedroza Dias, E-mail: hugodiasmello@usp.br; Heimfarth, Tobias; Mulato, Marcelo

    2015-06-15

    We investigated the use of electrodeposited polyaniline (PANI) thin sensing films in pH sensors. Two configurations of the Extended Gate Field Effect Transistor (EGFET) sensor were studied: the Single EGFET (S-EGFET) and the Instrumental Amplifier EGFET (IA-EGFET) setups. The films were analyzed in both systems and the sensitivity and linearity of each sensor were compared. Initial sensitivities (70–80 mV/pH) measured in the IA-EGFET were reduced due to polymer bulk protonation after a prior measurement in the S-EGFET system. Films with high amount of deposited polymer had their sensitivities least reduced. Bulk protonation occurred due to the step potential applied to the reference electrode in the S-EGFET system. These changes were also analyzed by scanning electron microscopy (SEM), visible reflectance spectroscopy and evaluation of CIE L*a*b* color scale. PANI pH EGFET sensors exhibited good linearity and stability that along with their high sensitivity, easy processing and low cost film production have large potential applications. - Highlights: • Electrodeposited polyaniline thin films were analyzed in two EGFET setups. • Polymer protonation provided changeable sensitivities. • Color and morphological variation confirm polymer aggregation and electrical changes.

  3. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  4. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  5. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  6. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  7. Nematic films at chemically structured surfaces

    Science.gov (United States)

    Silvestre, N. M.; Telo da Gama, M. M.; Tasinkevych, M.

    2017-02-01

    We investigate theoretically the morphology of a thin nematic film adsorbed at flat substrate patterned by stripes with alternating aligning properties, normal and tangential respectively. We construct a simple ‘exactly-solvable’ effective interfacial model where the liquid crystal distortions are accounted for via an effective interface potential. We find that chemically patterned substrates can strongly deform the nematic-air interface. The amplitude of this substrate-induced undulations increases with decreasing average film thickness and with increasing surface pattern pitch. We find a regime where the interfacial deformation may be described in terms of a material-independent universal scaling function. Surprisingly, the predictions of the effective interfacial model agree semi-quantitatively with the results of the numerical solution of a full model based on the Landau-de Gennes theory coupled to a square-gradient phase field free energy functional for a two phase system.

  8. High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-jun; ZHAO Bai-jun; FANG Xiu-jun; DU Guo-tong; LIU Da-li; GAO Chun-xiao; LIU Xi-zhe

    2005-01-01

    Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with (111) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.

  9. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  10. Chemical Reactions at Surfaces. Final Progress Report

    Energy Technology Data Exchange (ETDEWEB)

    None

    2003-02-21

    The Gordon Research Conference (GRC) on Chemical Reactions at Surfaces was held at Holiday Inn, Ventura, California, 2/16-21/03. Emphasis was placed on current unpublished research and discussion of the future target areas in this field.

  11. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    Science.gov (United States)

    Majoo, Sanjeev

    platinum CVD films showed little chemical response to carbon monoxide and propylene pulses, but exhibited a small response to oxygen and a significant response to hydrogen in vacuum. Finally, a finite difference FLUENT model for low pressure CVD of platinum films was developed and implemented. The process model predicts growth rate, thermal boundary layer profile and an insight into the reaction mechanism.

  12. Amineborane Based Chemical Hydrogen Storage - Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Sneddon, Larry G.

    2011-04-21

    The development of efficient and safe methods for hydrogen storage is a major hurdle that must be overcome to enable the use of hydrogen as an alternative energy carrier. The objectives of this project in the DOE Center of Excellence in Chemical Hydride Storage were both to develop new methods for on-demand, low temperature hydrogen release from chemical hydrides and to design high-conversion off-board methods for chemical hydride regeneration. Because of their reactive protic (N-H) and hydridic (B-H) hydrogens and high hydrogen contents, amineboranes such as ammonia borane, NH3BH3 (AB), 19.6-wt% H2, and ammonia triborane NH3B3H7 (AT), 17.7-wt% H2, were initially identified by the Center as promising, high-capacity chemical hydrogen storage materials with the potential to store and deliver molecular hydrogen through dehydrogenation and hydrolysis reactions. In collaboration with other Center partners, the Penn project focused both on new methods to induce amineborane H2-release and on new strategies for the regeneration the amineborane spent-fuel materials. The Penn approach to improving amineborane H2-release focused on the use of ionic liquids, base additives and metal catalysts to activate AB dehydrogenation and these studies successfully demonstrated that in ionic liquids the AB induction period that had been observed in the solid-state was eliminated and both the rate and extent of AB H2-release were significantly increased. These results have clearly shown that, while improvements are still necessary, many of these systems have the potential to achieve DOE hydrogen-storage goals. The high extent of their H2­-release, the tunability of both their H2 materials weight-percents and release rates, and their product control that is attained by either trapping or suppressing unwanted volatile side products, such as borazine, continue to make AB/ionic­-liquid based systems attractive candidates for chemical hydrogen storage applications. These studies also

  13. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  14. Long pulse chemical laser. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    Bardon, R.L.; Breidenthal, R.E.; Buonadonna, V.R. [and others] [Boeing Aerospace Co., Seattle, WA (United States)

    1989-02-01

    This report covers the technical effort through February, 1989. This effort was directed towards the technology associated with the development of a large scale, long pulse DF-CO{sub 2} chemical laser. Optics damage studies performed under Task 1 assessed damage thresholds for diamond-turned salt windows. Task 2 is a multi-faceted task involving the use of PHOCL-50 for laser gain measurements, LTI experiments, and detector testing by LANL personnel. To support these latter tests, PHOCL-50 was upgraded with Boeing funding to incorporate a full aperture outcoupler that increased its energy output by over a factor of 3, to a full kilojoule. The PHOCL-50 carbon block calorimeter was also recalibrated and compared with the LANL Scientech meter. Cloud clearing studies under Task 3 initially concentrated on delivering a Boeing built Cloud Simulation Facility to LANL, and currently involves design of a Cold Cloud Simulation Facility. A Boeing IRAD funded theoretical study on cold cloud clearing revealed that ice clouds may be easier to clear then warm clouds. Task 4 involves the theoretical and experimental study of flow system design as related to laser beam quality. Present efforts on this task are concentrating on temperature gradients induced by the gas filling process. General support for the LPCL field effort is listed under Task 5, with heavy emphasis on assuring reliable operation of the Boeing built Large Slide Valve and other device related tests. The modification of the PHOCL-50 system for testing long pulse DF (4{mu}m only) chemical laser operation is being done under Task 6.

  15. Surface roughness and chemical properties of porous inorganic films

    Energy Technology Data Exchange (ETDEWEB)

    Eggen, Carrie L.; McAfee, Paul M. [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287 (United States); Jin, Yi [China Electric Power Research Institute, Beijing 100192 (China); Lin, Y.S., E-mail: jerry.lin@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287 (United States)

    2015-09-30

    Porous inorganic films of different materials and pore architecture: mesoporous γ-alumina, mesoporous yttria stabilized zirconia (YSZ), macroporous YSZ and macroporous/microporous zeolite silicalite, were synthesized by the sol–gel spin-coating or dip-coating methods on silicon wafers of different surface roughness. Their surface chemical properties, pore and phase structure, and surface roughness were studied by various surface characterization methods. The pore sizes of these films are determined by their primary particle size. All the films studied are hydrophilic due to the presence of hydroxyl groups on the external crystallite surface, and their hydrophilicity increases in the order: macroporous YSZ < mesoporous YSZ < silicalite < γ-alumina. The γ-alumina films have highly smooth surfaces, while mesoporous YSZ, macroporous YSZ and silicalite films have similar surface roughness much rougher than γ-alumina films. The surface roughness of these coated films does not depend on the coating method, surface roughness of the substrate, surface chemistry or pore structure of the films. It is more controlled by the shape and size of the primary particles and aggregates in the sol or suspension from which the films are obtained. - Highlights: • Porous films of various pore structures are prepared by sol–gel methods. • γ-Alumina films have much smoother surface than thin films of other materials. • Film surface roughness is controlled by the shape and size of particles in the sols.

  16. Chemical protection against ionizing radiation. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Livesey, J.C.; Reed, D.J.; Adamson, L.F.

    1984-08-01

    The scientific literature on radiation-protective drugs is reviewed. Emphasis is placed on the mechanisms involved in determining the sensitivity of biological material to ionizing radiation and mechanisms of chemical radioprotection. In Section I, the types of radiation are described and the effects of ionizing radiation on biological systems are reviewed. The effects of ionizing radiation are briefly contrasted with the effects of non-ionizing radiation. Section II reviews the contributions of various natural factors which influence the inherent radiosensitivity of biological systems. Inlcuded in the list of these factors are water, oxygen, thiols, vitamins and antioxidants. Brief attention is given to the model describing competition between oxygen and natural radioprotective substances (principally, thiols) in determining the net cellular radiosensitivity. Several theories of the mechanism(s) of action of radioprotective drugs are described in Section III. These mechanisms include the production of hypoxia, detoxication of radiochemical reactive species, stabilization of the radiobiological target and the enhancement of damage repair processes. Section IV describes the current strategies for the treatment of radiation injury. Likely areas in which fruitful research might be performed are described in Section V. 495 references.

  17. CHEMICAL ANALYSES OF SODIUM SYSTEMS FINAL REPORT

    Energy Technology Data Exchange (ETDEWEB)

    Greenhalgh, W. O.; Yunker, W. H.; Scott, F. A.

    1970-06-01

    BNWL-1407 summarizes information gained from the Chemical Analyses of Sodium Systems Program pursued by Battelle- Northwest over the period from July 1967 through June 1969. Tasks included feasibility studies for performing coulometric titration and polarographic determinations of oxygen in sodium, and the development of new separation techniques for sodium impurities and their subsequent analyses. The program was terminated ahead of schedule so firm conclusions were not obtained in all areas of the work. At least 40 coulometric titrations were carried out and special test cells were developed for coulometric application. Data indicated that polarographic measurements are theoretically feasible, but practical application of the method was not verified. An emission spectrographic procedure for trace metal impurities was developed and published. Trace metal analysis by a neutron activation technique was shown to be feasible; key to the success of the activation technique was the application of a new ion exchange resin which provided a sodium separation factor of 10{sup 11}. Preliminary studies on direct scavenging of trace metals produced no conclusive results.

  18. Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

    KAUST Repository

    Trinh, Cong

    2012-07-10

    We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz), forming a film composed of the metal-ligand complex. Fast and quantitative formation of the complex leads to marked changes in the morphology and optical properties of the film. X-ray diffraction studies show that the chemical annealing process converts amorphous ZnTPP films to crystalline ZnTPP•ligand films, whose porphryin planes lie nearly parallel to the substrate (average deviation is 8° for the ZnTPP•pz film). Organic solar cells were prepared with ZnTPP donor and C 60 acceptor layers. Devices were prepared with and without chemical annealing of the ZnTPP layer with a pyrazine ligand. The devices with chemically annealed ZnTPP donor layer show an increase in short-circuit current (J SC) and fill factor (FF) relative to analogous unannealed devices, presumably because of enhanced exciton diffusion length and improved charge conductivity. The open circuit voltages (V OC) of the chemically annealed devices are lower than their unannealed counterpart because of enhanced polaron pair recombination at the donor/acceptor heterojunction. A net improvement of 5-20% in efficiency has been achieved, after chemical annealing of ZnTPP films with pyrazine. © 2012 American Chemical Society.

  19. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  20. 76 FR 9745 - Polyethylene Terephthalate Film, Sheet, and Strip From Taiwan: Final Results of Antidumping Duty...

    Science.gov (United States)

    2011-02-22

    ... Film from the People's Republic of China (PRC), for which the scope is essentially identical to the... International Trade Administration Polyethylene Terephthalate Film, Sheet, and Strip From Taiwan: Final Results... terephthalate film (PET Film) from Taiwan. See Polyethylene Terephthalate Film, Sheet, and Strip From...

  1. Thick film fabrication of aluminum nitride microcircuits. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  2. CHEMICALLY DEPOSITED SILVER FILM USED AS A SERS-ACTIVE OVER COATING LAYER FOR POLYMER FILM

    Institute of Scientific and Technical Information of China (English)

    Xiao-ning Liu; Gi Xue; Yun Lu; Jun Zhang; Fen-ting Li; Chen-chen Xue; Stephen Z.D. Cheng

    2001-01-01

    When colloidal silver particles were chemically deposited onto polymer film as an over-coating layer, surfaceenhanced Raman scattering (SERS) spectra could be collected for the surface analysis. SERS measurements of liquid crystal film were successfully performed without disturbing the surface morphology.

  3. Development of Low-cost Chemical and Micromechanical Sensors Based on Thick-film,Thin-film and Electroplated Films

    Institute of Scientific and Technical Information of China (English)

    Wenmin Qu; Kurt Drescher

    2000-01-01

    Various films could be used as sensing materials or as constructional materials for the fabrication of chemical and micromechanical sensors. To illustrate this potential, three sensors fabricated by very different film deposition technologies are given as examples. The sensors are a humidity sensor in thickfilm technology, a multi-functional gas sensor in thin-film technology and a three-dimensional acceleration sensor chip manufactured by electroplating techniques. Design, fabrication and characterisation of these sensors are described in this paper.

  4. 75 FR 6634 - Polyethylene Terephthalate Film, Sheet, and Strip from India: Final Results of Countervailing...

    Science.gov (United States)

    2010-02-10

    ... International Trade Administration Polyethylene Terephthalate Film, Sheet, and Strip from India: Final Results... terephthalate film, sheet, and strip (PET film) from India for the period January 1, 2007 through December 31, 2007. See Polyethylene Terephthalate Film, Sheet, and Strip from India: Preliminary Results...

  5. 76 FR 76943 - Polyethylene Terephthalate Film, Sheet, and Strip From India: Final Results of Antidumping Duty...

    Science.gov (United States)

    2011-12-09

    ... International Trade Administration Polyethylene Terephthalate Film, Sheet, and Strip From India: Final Results... terephthalate film (PET Film) from India.\\1\\ This review covers one producer/exporter of subject merchandise... Terephthalate Film, Sheet, and Strip From India: Preliminary Results of Antidumping Duty Administrative...

  6. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  7. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Science.gov (United States)

    Tamulevičius, Tomas; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-01

    We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6-12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet-visible light (UV-VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2-6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined processing employing aluminum mask resulted in nanocomposite material (DLC:Ag) micropatterns.

  8. Chemical characterization of a marine conditioning film

    Digital Repository Service at National Institute of Oceanography (India)

    Garg, A.; Jain, A.; Bhosle, N.B.

    . 2. Materials and Methods 2.1. Chemicals and reagents Glass cover slips were purchased from Blue Star, India. Standard sugars and, myo- inositol were obtained from Sigma (St. Louis, MO, USA). Sodium carbonate, NaOH, HCl and methanol were of high... purity AR grades and were purchased from s.d. Fine Chemicals, Mumbai. Methanol was double distilled before use. Distilled water was purified using UV- Milli-Q water purification system (Millipore, Bangalore, India). 2.2. Preparation and deployment...

  9. Annealing effects of chemically synthesized FePt nanocrystal films

    Science.gov (United States)

    Hyun, Changbae; Lee, Doh C.

    2005-03-01

    Chemically synthesized FePt nanocrystals can exhibit room temperature ferromagnetism after being annealed at temperatures above ˜500^oC[1]. The thermal annealing changes the crystal structure from face-centered cubic to the hard magnetic face-centered tetragonal phase. In thick nanocrystal films, the coercivity can be quite large, however, the coercivity of thin films has been found to decrease significantly with decreasing thickness, even losing the room temperature ferromagnetism in some cases[2]. In order to help determine how the microscopic magnetic structure in these thin films evolves with film thickness, we studied using magnetic force microscopy (MFM), under external applied fields, films consisting of 4 to 15 nanocrystal monolayers. We cast smooth films of 4 nm diameter FePt nanocrystals and annealed them at temperatures ranging from 400 to 650^oC, acquiring MFM images as a function of annealing temperature. Thin FePt films showed lower coercivity than thick films. To help interpret the MFM images, complementary magnetic and structural data was obtained using SQUID magnetometry, x-ray diffraction, and transmission electron microscopy (TEM). [1] S. Sun et al., Science 287, 1989 (2000). [2] G. A. Held et al., Journal of Applied Physics 95, 1481 (2004)

  10. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  11. Chemical solution deposition of YBCO thin film by different polymer additives

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.T.; Li, G.; Pu, M.H.; Sun, R.P.; Zhou, H.M.; Zhang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Yang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)], E-mail: yzhao@swjtu.edu.cn

    2008-09-15

    A polymer-assisted chemical solution deposition approach has been proposed for the preparation of YBCO thin film. Different additives like PVB (polyvinyl butyral), PEG (polyethylene glycol) and PVP (polyvinylpyrrolidone) have been used to adjust the final viscosity of the precursor solution and thus the film formation. In this fluorine-free approach, YBCO has been deposited on single crystal substrates with metal acetates being starting materials. Biaxially textured YBCO thin films have been obtained. However, different additives lead to different microstructure. Dense, smooth and crack-free YBCO film prepared with PVB as additive yields sharp superconducting transition around T{sub c} = 90 K as well as high J{sub c} (0 T, 77 K) over 3 MA/cm{sup 2}.

  12. Chemical solution deposition of YBCO thin film by different polymer additives

    Science.gov (United States)

    Wang, W. T.; Li, G.; Pu, M. H.; Sun, R. P.; Zhou, H. M.; Zhang, Y.; Zhang, H.; Yang, Y.; Cheng, C. H.; Zhao, Y.

    2008-09-01

    A polymer-assisted chemical solution deposition approach has been proposed for the preparation of YBCO thin film. Different additives like PVB (polyvinyl butyral), PEG (polyethylene glycol) and PVP (polyvinylpyrrolidone) have been used to adjust the final viscosity of the precursor solution and thus the film formation. In this fluorine-free approach, YBCO has been deposited on single crystal substrates with metal acetates being starting materials. Biaxially textured YBCO thin films have been obtained. However, different additives lead to different microstructure. Dense, smooth and crack-free YBCO film prepared with PVB as additive yields sharp superconducting transition around Tc = 90 K as well as high Jc (0 T, 77 K) over 3 MA/cm 2.

  13. Surface chemical studies of chemical vapour deposited diamond thin films

    CERN Document Server

    Proffitt, S

    2001-01-01

    could not easily be correlated to the bulk film properties. It is suggested that electron emission arises from the graphite component of graphite- diamond grain boundaries that are present in the nanocrystalline films. species. The adsorbed O and Cl species are more strongly bound to the K layer than they are to the diamond substrate, so thermal desorption of K from the K/CI/diamond or K/O/diamond surface results also in the simultaneous loss ofO and Cl. The phosphorus precursor trisdimethylaminophosphine (TDMAP) has a negligible reactive sticking probability on the clean diamond surface. This can be increased by thermal cracking of the gas phase precursor by a heated filament, resulting in non-activated adsorption to produce an adlayer containing a mixture of surface-bound ligands and phosphorus containing species. The ligands were readily lost upon heating, leaving P, some of which was lost from the surface at higher temperatures. Pre-hydrogenation of the diamond surface inhibited the uptake of cracked TDMA...

  14. Nanoscale chemical sensor based on organic thin-film transistors

    Science.gov (United States)

    Wang, Liang; Fine, Daniel; Dodabalapur, Ananth

    2004-12-01

    Nanoscale organic thin-film transistors were fabricated to investigate their chemical sensing properties. The use of a four-terminal geometry ensures that the sensor active area is truly nanoscale, and eliminates undesirable spreading currents. The sensor response was markedly different in nanoscale sensors compared to large-area sensors for the same analyte-semiconductor combination. The chemical sensing mechanisms in both microscale and nanoscale transistors are briefly discussed.

  15. Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory

    Science.gov (United States)

    Machida, Hideaki; Hamada, Seichi; Horiike, Takafumi; Ishikawa, Masato; Ogura, Atsushi; Ohshita, Yoshio; Ohba, Takayuki

    2010-05-01

    In this paper, we describe chemical vapor deposition (CVD) of GeSbTe (GST) films for fabricating phase change memory. A low-carbon-impurity GST film was deposited by CVD. Film composition and structure varied significantly depending on deposition temperature and pressure. The tendency of composition variation on a TiN substrate was the same as that on a SiO2 substrate. Finally, flat Ge2Sb2Te5 thin films were obtained below 300 °C using tert-butylgermanium, triisopropylantimony and diisopropyltellurium as precursors.

  16. Chemical Synthesis and Electrochemical Characterization of Nanoporous Gold films

    DEFF Research Database (Denmark)

    Christiansen, Mikkel U-B; Seselj, Nedjeljko; Engelbrekt, Christian

    Nanoporous gold (NPG) is conventionally made via dealloying methods1. We present an alternative method for bottom-up chemical synthesis of nanoporous gold film (cNPGF), with properties resembling those of dealloyed NPG. The developed procedure is simple and only benign chemicals are used....... Chloroauric acid is reduced to nanoparticles (NPs) by 2-(N-morpholino)ethanesulfonate, acting also as a protecting agent for the NPs and as a pH buffer, while potassium chloride is used to control ionic strength. The film formation is controlled by parameters such as temperature, ionic strength...... and protonation of the buffer. Therefore, it is possible to influence the trapping of nanoparticles at the air-liquid interface, yielding porous thin film structures, Figure 1A. The produced cNPGFs have been investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM) and cyclic...

  17. Waveguide Zeeman interferometry for thin-film chemical sensors

    Energy Technology Data Exchange (ETDEWEB)

    Grace, K.M.; Shrouf, K.; Johnston, R.G.; Yang, X.; Swanson, B. [Los Alamos National Lab., NM (United States); Honkanen, S.; Ayras, P.; Peyghambarian, N. [Optical Sciences Center, Univ. of Arizona, Tucson, AZ (United States); Katila, P.; Leppihalme, M. [VTT Electronics (Finland)

    1997-10-01

    A chemical sensor is demonstrated which is based on Si{sub 3}N{sub 4} optical waveguides coated with species-selective thin films and using Zeeman interferometry as the detection technique. Relative phase change between TE and TM modes is measured. Real time and reversible response to toluene is shown with ppm level sensitivity.

  18. CdS films deposited by chemical bath under rotation

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

    2010-08-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  19. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  20. Exempt chemical mixtures containing gamma-butyrolactone. Final rule.

    Science.gov (United States)

    2010-06-29

    This rulemaking finalizes a November 12, 2008, Notice of Proposed Rulemaking in which DEA proposed that chemical mixtures that are 70 percent or less gamma-butyrolactone (GBL), by weight or volume, be automatically exempt from regulatory controls under the Controlled Substances Act (CSA). DEA is seeking through this rulemaking to exempt only those chemical mixtures that do not represent a significant risk of diversion. This regulation makes GBL chemical mixtures, in concentrations greater than 70 percent, subject to List I chemical regulatory requirements of the CSA, except if exempted through an existing categorical exemption. DEA is taking this action because there is a serious threat to the public safety associated with the ease by which GBL is chemically converted to the schedule I controlled substance gamma-hydroxybutyric acid (GHB). DEA recognizes that concentration criteria alone cannot identify all mixtures that warrant exemption. As a result, DEA regulations provide for an application process by which manufacturers may obtain exemptions from CSA regulatory controls for those GBL chemical mixtures that are not automatically exempt under the concentration criteria.

  1. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  2. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  3. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  4. Copper selenide thin films by chemical bath deposition

    Science.gov (United States)

    García, V. M.; Nair, P. K.; Nair, M. T. S.

    1999-05-01

    We report the structural, optical, and electrical properties of thin films (0.05 to 0.25 μm) of copper selenide obtained from chemical baths using sodium selenosulfate or N,N-dimethylselenourea as a source of selenide ions. X-ray diffraction (XRD) studies on the films obtained from baths using sodium selenosulfate suggest a cubic structure as in berzelianite, Cu 2- xSe with x=0.15. Annealing the films at 400°C in nitrogen leads to a partial conversion of the film to Cu 2Se. In the case of films obtained from the baths containing dimethylselenourea, the XRD patterns match that of klockmannite, CuSe. Annealing these films in nitrogen at 400°C results in loss of selenium, and consequently a composition rich in copper, similar to Cu 2- xSe, is reached. Optical absorption in the films result from free carrier absorption in the near infrared region with absorption coefficient of ˜10 5 cm -1. Band-to-band transitions which gives rise to the optical absorption in the visible-ultraviolet region may be interpreted in terms of direct allowed transitions with band gap in the 2.1-2.3 eV range and indirect allowed transitions with band gap 1.2-1.4 eV. All the films, as prepared and annealed, show p-type conductivity, in the range of (1-5)×10 3 Ω -1 cm -1. This results in high near infrared reflectance, of 30-80%.

  5. [Reducing nutrients loss by plastic film covering chemical fertilizers].

    Science.gov (United States)

    Chen, Huo-jun; Wei, Ze-bin; Wu, Qi-tang; Zeng, Shu-cai

    2010-03-01

    With the low utilization rate of fertilizers by crop and the growing amount of fertilizer usage,the agricultural non-point source pollution in China is becoming more and more serious. The field experiments planting corns were conducted, in which the applied chemical fertilizers were recovered with plastic film to realize the separation of fertilizers from rain water. In the experiments, the influences of different fertilizing treatments on the growing and production of sweet corn were observed. The fertilizer utilization rate and the nutrient contents in surface run-off water with and without the film covering were also determined. Results showed that, with only 70% of the normal amount of fertilizers,the sweet corn could already get high yield under the experimental soil conditions. Soil analysis after corn crops showed that the amounts of available N, P and K in the soil increased obviously with the film-covering, and the decreasing order was: 100% fertilizers with film-covering > 70% fertilizers with film-covering > 100% fertilizers, 70% fertilizers > no fertilizer. The average utilization coefficients of fertilizers by the crop were 42%-87%, 0%-3%, 5%-15% respectively for N, P and K. It was higher with film-covering than that without covering, especially for the high fertilization treatment. Analysis of water samples collected for eight run-off events showed that, without film-covering, N, P and K average concentrations in the runoff waters with fertilizations were 27.72, 2.70 and 7.07 mg x L(-1), respectively. And they were reduced respectively by 39.54%, 28.05%, 43.74% with the film-covering. This can give significant benefits to the decrease of agricultural non-point source pollution and water eutrophication.

  6. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Shin Jinhong [Texas Materials Institute, University of Texas at Austin, Austin, TX 78750 (United States); Waheed, Abdul [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Winkenwerder, Wyatt A. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Kim, Hyun-Woo [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Agapiou, Kyriacos [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Jones, Richard A. [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Hwang, Gyeong S. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States)]. E-mail: ekerdt@che.utexas.edu

    2007-05-07

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO{sub 2} containing {approx} 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH{sub 2}(PMe{sub 3}){sub 4} (Me = CH{sub 3}) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

  7. Shallow bath chemical deposition of CdS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Y.S. [Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China); Choubey, R.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi, 835 215 (India); Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China); Yu, W.C. [Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China); Hsu, W.T. [Green Energy and Environmental Research Laboratory, Industrial Technology Research Institute, Hsin-Chu, Taiwan (China); Lan, C.W., E-mail: cwlan@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)

    2011-10-31

    Cadmium sulfide thin film was grown by shallow chemical bath deposition technique. This technique used a highly conducted hot plate to heat the substrate, while using a shallow bath for higher thermal gradients. As a result, large area uniformity could be achieved and the homogeneous nucleation was suppressed. More importantly, the solution used was greatly reduced, which is crucial for cost reduction in practice. The effects of temperature and shaking on the growth kinetics and film properties were investigated. The reaction activation energy was obtained to be 0.84 eV, and was not affected much by shaking indicating that the deposition is essentially reaction controlled. Furthermore, the films deposited at low or high temperature conditions had better photoconductivity.

  8. Effective conductivity of chemically deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Robles, M. [Universidad Autonoma del Estado de Morelos (UAEM), Cuernavaca (Mexico). Fac. de Ciencias; Tagueena-Martinez, J. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar; Del Rio, J.A. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar

    1997-01-30

    Chemically deposited thin films have multiple applications. However, as a result of their complex structure, their physical properties are very difficult to predict. In this paper, we use an effective medium approach to model these heterogeneous systems. We extend Thorpe`s formula for the effective electrical conductivity of elliptical holes randomly distributed in a matrix to a system composed of conducting ellipses in a conducting matrix. This extension is used to calculate the effective electrical conductivity of polycrystalline chemically deposited ZnO thin films. We compare experimental results obtained by two different deposition methods: spray pyrolysis and successive ion layer adsorption and reaction (SILAR) reported here. We select the elliptical geometric parameters from microstructural data. Good agreement between the experimental measurements and our calculation is obtained. In addition, we present a new proof of the reciprocity theorem used to derive the theoretical relation. (orig.)

  9. Preparation and chemical characterization of neodymium-doped molybdenum oxide films grown using spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Alfonso, J. E. [Universidad Nacional de Colombia, Departamento de Fisica, Grupo de Ciencia Materiales y Superficies, AA 5997 Bogota DC (Colombia); Moreno, L. C., E-mail: jealfonsoo@unal.edu.co [Universidad Nacional de Colombia, Departamento de Quimica, AA 5997 Bogota DC (Colombia)

    2014-07-01

    We studied the crystalline, morphology, and surface composition of Nd-doped molybdenum oxide films grown on glass slides through spray pyrolysis. After fabrication, the films were subjected to thermal treatment in oxygen for periods ranging from 2 to 20 hours. The films were structurally characterized though X-ray diffraction (XRD), their bulk chemical composition was determined using Energy-Dispersive X-ray analysis (EDX), and their surface composition was determined using X-ray Photoelectron Spectroscopy (XP S). The XRD results show that the films obtained from different dissolution volumes and at substrate temperature of 300 grades C exhibit the characteristics of the oxygen-deficient molybdenum trioxide Mo{sub 9}O{sub 26} phase. The films subjected to different thermal treatments exhibit a mixture of Mo{sub 9}O{sub 26} and Mo{sub 17}O{sub 47} phases. EDX study shows the energy belonging to the L line of Nd. Finally, films doped with Nd and subjected to a thermal treatment of 20 h were analyzed through XP S, showing the binding energies at the crystalline lattice correspond to Nd{sub 2} (MoO{sub 4}){sub 3} and Nd{sub 2}Mo{sub 2}O{sub 7}. (Author)

  10. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  11. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    Energy Technology Data Exchange (ETDEWEB)

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  12. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    Science.gov (United States)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  13. Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.

    Science.gov (United States)

    Corneille, Jason Stephen

    This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. Metallic magnesium films were grown and characterized as a preliminary study to the synthesis of magnesium oxide. Magnesium oxide (MgO(100)) was synthesized on Mo(100) by evaporating magnesium at a rate of one monolayer per minute in an oxygen background pressure of 1 times 10 ^{-6} Torr at room temperature. The resulting film was found to exhibit spectroscopic characteristics quite similar to those observed for bulk MgO. The acid/base characteristics of the films were studied using carbon monoxide, water and methanol as probe molecules. The film was found to exhibit essentially the same chemical properties as found in analogous powdered catalysts. Silicon dioxide was synthesized by evaporating silicon onto Mo(100) in an oxygen ambient. It is shown that the silicon oxide prepared at room temperature with a silicon deposition rate of {~ }{1.2}A/min and an oxygen pressure of 2 times 10^{ -8} Torr, consisted of predominantly silicon dioxide with a small fraction of suboxides. Annealing to

  14. Teflon films for chemically-inert microfluidic valves and pumps.

    Science.gov (United States)

    Grover, William H; von Muhlen, Marcio G; Manalis, Scott R

    2008-06-01

    We present a simple method for fabricating chemically-inert Teflon microfluidic valves and pumps in glass microfluidic devices. These structures are modeled after monolithic membrane valves and pumps that utilize a featureless polydimethylsiloxane (PDMS) membrane bonded between two etched glass wafers. The limited chemical compatibility of PDMS has necessitated research into alternative materials for microfluidic devices. Previous work has shown that spin-coated amorphous fluoropolymers and Teflon-fluoropolymer laminates can be fabricated and substituted for PDMS in monolithic membrane valves and pumps for space flight applications. However, the complex process for fabricating these spin-coated Teflon films and laminates may preclude their use in many research and manufacturing contexts. As an alternative, we show that commercially-available fluorinated ethylene-propylene (FEP) Teflon films can be used to fabricate chemically-inert monolithic membrane valves and pumps in glass microfluidic devices. The FEP Teflon valves and pumps presented here are simple to fabricate, function similarly to their PDMS counterparts, maintain their performance over extended use, and are resistant to virtually all chemicals. These structures should facilitate lab-on-a-chip research involving a vast array of chemistries that are incompatible with native PDMS microfluidic devices.

  15. Sheet resistances of composite films prepared from chemically-reduced graphite oxides and multiwalled carbon nanotubes

    Science.gov (United States)

    Oh, Weontae; Kim, Daehan; Jeong, Euh Duck; Bae, Jong-Seong

    2013-12-01

    Graphite oxides (GOs) were spray-coated on a glass substrate to prepare the GO film, and the film was soaked in a HI aqueous solution to make a chemically-reduced GO (rGO) film. The rGOs were successfully prepared by using a chemical reduction of as-made GOs, but their surfaces were seriously damaged during the chemical treatments. The Sheet resistances of rGO and rGO/multiwalled carbon nanotube (MWNT) films were characterized as functions of the film's thickness and the number of MWNTs added to the rGO films.

  16. Oxidative chemical vapor deposition of polyaniline thin films.

    Science.gov (United States)

    Smolin, Yuriy Y; Soroush, Masoud; Lau, Kenneth K S

    2017-01-01

    Polyaniline (PANI) is synthesized via oxidative chemical vapor deposition (oCVD) using aniline as monomer and antimony pentachloride as oxidant. Microscopy and spectroscopy indicate that oCVD processing conditions influence the PANI film chemistry, oxidation, and doping level. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) indicate that a substrate temperature of 90 °C is needed to minimize the formation of oligomers during polymerization. Lower substrate temperatures, such as 25 °C, lead to a film that mostly includes oligomers. Increasing the oxidant flowrate to nearly match the monomer flowrate favors the deposition of PANI in the emeraldine state, and varying the oxidant flowrate can directly influence the oxidation state of PANI. Changing the reactor pressure from 700 to 35 mTorr does not have a significant effect on the deposited film chemistry, indicating that the oCVD PANI process is not concentration dependent. This work shows that oCVD can be used for depositing PANI and for effectively controlling the chemical state of PANI.

  17. Short review on chemical bath deposition of thin film and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Mugle, Dhananjay, E-mail: dhananjayforu@gmail.com; Jadhav, Ghanshyam, E-mail: ghjadhav@rediffmail.com [Depertment of Physics, Shri Chhatrapati Shivaji College, Omerga-413606 (India)

    2016-05-06

    This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

  18. Electronic processes in thin-film PV materials. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P.C.; Chen, D.; Chen, S.L. [and others

    1998-07-01

    The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

  19. Epitaxial ternary nitride thin films prepared by a chemical solution method

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  20. Final Technical Report for SISGR: Ultrafast Molecular Scale Chemical Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Hersam, Mark C. [Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering; Guest, Jeffrey R. [Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Guisinger, Nathan P. [Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Hla, Saw Wai [Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Schatz, George C. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Seideman, Tamar [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Van Duyne, Richard P. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry

    2017-04-10

    The Northwestern-Argonne SISGR program utilized newly developed instrumentation and techniques including integrated ultra-high vacuum tip-enhanced Raman spectroscopy/scanning tunneling microscopy (UHV-TERS/STM) and surface-enhanced femtosecond stimulated Raman scattering (SE-FSRS) to advance the spatial and temporal resolution of chemical imaging for the study of photoinduced dynamics of molecules on plasmonically active surfaces. An accompanying theory program addressed modeling of charge transfer processes using constrained density functional theory (DFT) in addition to modeling of SE-FSRS, thereby providing a detailed description of the excited state dynamics. This interdisciplinary and highly collaborative research resulted in 62 publications with ~ 48% of them being co-authored by multiple SISGR team members. A summary of the scientific accomplishments from this SISGR program is provided in this final technical report.

  1. Control of a chemical precursor used in the illicit manufacture of fentanyl as a List I chemical. Final rule.

    Science.gov (United States)

    2008-07-25

    The Drug Enforcement Administration (DEA) is finalizing the Interim Rule with Request for Comment published in the Federal Register on April 23, 2007. The Interim Rule controlled the chemical N-phenethyl-4- piperidone (NPP) as a List I chemical under the Controlled Substances Act. Clandestine laboratories are using this chemical to illicitly manufacture the schedule II controlled substance fentanyl. No comments to the Interim Rule were received. This Final Rule finalizes the regulations without change.

  2. The preparation and chemical reaction kinetics of tungsten bronze thin films and nitrobenzene with and without a catalyst

    Science.gov (United States)

    Materer, Nicholas F.; Apblett, Allen; Kadossov, Evgueni B.; Khan, Kashif Rashid; Casper, Walter; Hays, Kevin; Shams, Eman F.

    2016-06-01

    Microcrystalline tungsten bronze thin films were prepared using wet chemical techniques to reduce a tungsten oxide thin film that was prepared by thermal oxidation of a sputter deposited tungsten metal film on a quartz substrate. The crystallinity of these films was determined by X-ray diffraction and the surface was characterized by X-ray and Ultra-Violet Photoelectron spectroscopy. The total amount of hydrogen incorporated in the film was monitored using absorbance spectroscopy at 900 nm. The oxidation kinetics of the film and the hydrogenation of nitrobenzene in hexane were measured as a function of film thickness. A satisfactory fit of the resulting kinetics was obtained using a model that involves two simultaneous processes. The first one is the proton diffusion from the bulk of the film to the surface, and the second is a reaction of the surface protons with the oxidants. Finally, the dependence of the reaction rates on the presence of catalytic amounts of first row transition metals on the surface of the film was explored.

  3. Central Florida Film Production Technology Training Program. Final Report.

    Science.gov (United States)

    Valencia Community Coll., Orlando, FL.

    The Central Florida Film Production Technology Training program provided training to prepare persons for employment in the motion picture industry. Students were trained in stagecraft, sound, set construction, camera/editing, and post production. The project also developed a curriculum model that could be used for establishing an Associate in…

  4. The physical and chemical properties of ultrathin oxide films.

    Science.gov (United States)

    Street, S C; Xu, C; Goodman, D W

    1997-01-01

    Thin oxide films (from one to tens of monolayers) of SiO2, MgO, NiO, Al2O3, FexOy, and TiO2 supported on refractory metal substrates have been prepared by depositing the oxide metal precursor in a background of oxygen (ca 1 x 10(-5) Torr). The thinness of these oxide samples facilitates investigation by an array of surface techniques, many of which are precluded when applied to the corresponding bulk oxide. Layered and mixed binary oxides have been prepared by sequential synthesis of dissimilar oxide layers or co-deposition of two different oxides. Recent work has shown that the underlying oxide substrate can markedly influence the electronic and chemical properties of the overlayer oxide. The structural, electronic, and chemical properties of these ultrathin oxide films have been probed using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (ELS), ion-scattering spectroscopy (ISS), high-resolution electron energy loss spectroscopy (HREELS), infrared reflectance absorption spectroscopy (IRAS), temperature-programmed desorption (TPD), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS).

  5. Thin liquid films with time-dependent chemical reactions sheared by an ambient gas flow

    Science.gov (United States)

    Bender, Achim; Stephan, Peter; Gambaryan-Roisman, Tatiana

    2017-08-01

    Chemical reactions in thin liquid films are found in many industrial applications, e.g., in combustion chambers of internal combustion engines where a fuel film can develop on pistons or cylinder walls. The reactions within the film and the turbulent outer gas flow influence film stability and lead to film breakup, which in turn can lead to deposit formation. In this work we examine the evolution and stability of a thin liquid film in the presence of a first-order chemical reaction and under the influence of a turbulent gas flow. Long-wave theory with a double perturbation analysis is used to reduce the complexity of the problem and obtain an evolution equation for the film thickness. The chemical reaction is assumed to be slow compared to film evolution and the amount of reactant in the film is limited, which means that the reaction rate decreases with time as the reactant is consumed. A linear stability analysis is performed to identify the influence of reaction parameters, material properties, and environmental conditions on the film stability limits. Results indicate that exothermic reactions have a stabilizing effect whereas endothermic reactions destabilize the film and can lead to rupture. It is shown that an initially unstable film can become stable with time as the reaction rate decreases. The shearing of the film by the external gas flow leads to the appearance of traveling waves. The shear stress magnitude has a nonmonotonic influence on film stability.

  6. Chemical bath deposition and characterization of Cu2O-CuxS thin films

    OpenAIRE

    EYA, D. D. O.

    2010-01-01

    Cu2O-CuxS thin films have been deposited on glass substrate by chemical bath deposition technique. The films were obtained by depositing Copper Sulphide (CuxS) on Copper (I) Oxide (Cu2O) and then Cu2O on CuxS. The peak solar transmittance across the thin films were found to be

  7. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  8. Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-27

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  9. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  10. Structural and Optical Study of Chemical Bath Deposited Nano-Structured CdS Thin Films

    Science.gov (United States)

    Kumar, Suresh; Sharma, Dheeraj; Sharma, Pankaj; Sharma, Vineet; Barman, P. B.; Katyal, S. C.

    2011-12-01

    CdS is commonly used as window layer in polycrystalline solar cells. The paper presents a structural and optical study of CdS nano-structured thin films. High quality CdS thin films are grown on commercial glass by means of chemical bath deposition. It involves an alkaline solution of cadmium salt, a complexant, a chalcogen source and a non-ionic surfactant. The films have been prepared under various process parameters. The chemically deposited films are annealed to estimate its effect on the structural and optical properties of films. These films (as -deposited and annealed) have been characterized by means of XRD, SEM and UV-Visible spectrophotometer. XRD of films show the nano-crystalline nature. The energy gap of films is found to be of direct in nature.

  11. Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

    OpenAIRE

    SALL, THIERNO; Marí Soucase, Bernabé; Mollar García, Miguel Alfonso; Hartitti, Bouchaib; Fahoume, Mounir

    2015-01-01

    In2S3 thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In2S3 thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optic...

  12. Liquid precursor films spreading on chemically patterned substrates

    Science.gov (United States)

    Checco, Antonio

    2008-03-01

    We study the spreading of nonvolatile liquid squalane on chemically patterned nanostripes by using non-contact Atomic Force Microscopy (NC-AFM). The substrates are octadecylthrichlorosilane(OTS)-coated silicon wafers chemically patterned on multiple length-scales using a combination of UV and AFM oxidative lithographies. This process allows us to locally convert the terminal methyl groups of the OTS surface (non-wettable) into carboxylic acid groups (wettable) without affecting considerably the substrate roughness (squalane spreads across this ``microfluidic network'' starting from the large lines eventually reaching the nanolines (50 to 500 nm-wide). NC-AFM is used to image the morphology of the liquid as it spreads across the nanolines. We find that the liquid thickness on the nanolines grows with time (up to ˜10 nm) according to a power-law with exponent ˜1. These preliminary results suggest that the spreading dynamics of laterally-confined liquids slightly differs, as expected, from the one of laterally homogeneous precursor films. We compare our findings to recent theoretical predictions of confined liquid flow and also discuss its relevance to nanofluidics.

  13. Laser diagnostics of chemical vapour deposition of diamond films

    CERN Document Server

    Wills, J B

    2002-01-01

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH sub 4 / H sub 2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH sub 3 , NH and C sub 2 H sub 2 in a hot filament (HF) activated gas mixture and CH, C sub 2 and C sub 2 H sub 2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH sub 3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O sub 2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (approx 10 sup 1 sup 3 molecules / cm...

  14. Chemical bath deposition of CdS thin films: An approach to the chemical mechanism through study of the film microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Many papers have been published lately on chemical bath deposition of CdS (CBD-CdS) thin films and related materials due to the promising results obtained using CBD-CdS for the fabrication of thin-film solar cells. In spite of this little of the research proposes a realistic chemical mechanism for the deposition process based on the determination of kinetic parameters. In this paper the authors present an exhaustive study of the CBD-CdS kinetic from which they propose a new chemical mechanism which agrees with the kinetic parameters determined supported by heterogeneous catalysis concepts. Simultaneously, the dependence of the deposited film structure on the kinetic variables is studied and the results obtained corroborate the proposed mechanism. These studies have allowed the authors to establish a standard set of conditions for the fabrication of homogeneous and continuous very thin CdS films.

  15. Elimination of exemptions for chemical mixtures containing the list I chemicals ephedrine and/or pseudoephedrine. Final rule.

    Science.gov (United States)

    2008-07-10

    The Drug Enforcement Administration (DEA) is finalizing, without change, the Interim Rule with Request for Comment published in the Federal Register on July 25, 2007 (72 FR 40738). The Interim Rule removed the Controlled Substances Act (CSA) exemptions for chemical mixtures containing ephedrine and/or pseudoephedrine with concentration limits at or below five percent. Upon the effective date of the Interim Rule, all ephedrine and pseudoephedrine chemical mixtures, regardless of concentration and form, became subject to the regulatory provisions of the CSA. DEA regulated the importation, exportation, manufacture, and distribution of these chemical mixtures by requiring persons who handle these chemical mixtures to register with DEA, maintain certain records common to business practice, and file certain reports, regarding these chemical mixtures. No comments to the Interim Rule were received. This Final Rule finalizes the Interim Rule without change.

  16. Thin Films with Low Zn Content Prepared by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Caijuan Tian

    2012-01-01

    Full Text Available Chemical bath deposition (CBD was used for the growth of thin films with low Zn content. The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated. The chemical growth mechanism of thin films was analyzed, and optimized growth conditions for the thin films were established. The fill factor and short-circuit current were improved while was used to replace CdS as the window layer in CdTe solar cells.

  17. Environmental assessment of advanced thin film manufacturing process. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Cunningham, D.W.; Mopas, E.; Skinner, D. [BP Solar, Inc., Fairfield, CA (United States); McGuire, L.; Strehlow, M. [Radian International, Walnut Creek, CA (United States)

    1998-09-01

    This report describes work performed by BP Solar, Inc., to provide an extensive preproduction analysis of waste-stream abatement at its plant in Fairfield, California. During the study, numerous technologies were thoroughly evaluated, which allowed BP Solar to select systems that outperformed the stringent federal and state regulations. The main issues were originally perceived to be controlling cadmium compound releases to both air and wastewater to acceptable levels and adopting technologies for air and water waste streams in an efficient, cost-effective manner. BP Solar proposed high-efficiency, reliable control equipment that would reduce air-contaminant emission levels below levels of concern. Cadmium telluride dust is successfully controlled with high-efficiency (>99.9%) bag-in/bag-out filters. For air abatement, carbon canisters provide efficient VOC reduction, and wastewater pretreatment is required per federal pretreatment standards. BP Solar installed a cadmium-scavenging ion exchange system and electrowinning system capable of removing cadmium to <10 ppb (local publicly-owned-treatment-works limits for cadmium is 30 ppb). BP Solar plans to maximize potential reuse of rinse waters by phasing in additional wastewater treatment technologies. Finally, the work to date has identified the areas that need to be revisited as production scales up to ensure that all health, safety, and environmental goals are met.

  18. 78 FR 62443 - Perfluoroalkyl Sulfonates and Long-Chain Perfluoroalkyl Carboxylate Chemical Substances; Final...

    Science.gov (United States)

    2013-10-22

    ... AGENCY 40 CFR Parts 9 and 721 RIN 2070-AJ95 Perfluoroalkyl Sulfonates and Long-Chain Perfluoroalkyl... new use rule (SNUR) for perfluoroalkyl sulfonate (PFAS) chemical substances to add PFAS chemical.... EPA is also finalizing a SNUR for long-chain perfluoroalkyl carboxylate (LCPFAC) chemical...

  19. Chemically modified cellulose paper as a thin film microextraction phase.

    Science.gov (United States)

    Saraji, Mohammad; Farajmand, Bahman

    2013-11-01

    In this paper, chemically modified cellulose paper was introduced as a novel extracting phase for thin film microextraction (TFME). Different reagents (Octadecyltrichlorosilane, diphenyldichlorosilane, cyclohexyl isocyanate and phenyl isocyanate) were used to modify the cellulose papers. The modified papers were evaluated as a sorbent for the extraction of some synthetic and natural estrogenic hormones (17α-ethynylestradiol, estriol and estradiol) from aqueous samples. Liquid chromatography-fluorescence detection was used for the quantification of the extracted compounds. The cellulose paper modified with phenyl isocyanate showed the best affinity to the target compounds. TEME parameters such as desorption condition, shaking rate, sample ionic strength and extraction time were investigated and optimized. Limit of detections were between 0.05 and 0.23μgL(-1) and relative standard deviations were less than 11.1% under the optimized condition. The calibration curves were obtained in the range of 0.2-100μgL(-1) with a good linearity (r(2)>0.9935). Wastewater, human urine, pool and river water samples were studied as real samples for the evaluation of the method. Relative recoveries were found to be between 75% and 101%.

  20. Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

    Science.gov (United States)

    Andrade, E.; García, V. M.; Nair, P. K.; Nair, M. T. S.; Zavala, E. P.; Huerta, L.; Rocha, M. F.

    2000-03-01

    Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of Cu xSe thin film to Cu 2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

  1. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  2. Electrocatalytic Organic-Inorganic Hybrid Films and Their Applications in Chemical Sensors and Biosensors

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    @@ In this report, we will present the organic-inorganic hybrid molecular films prepared in our group and their applications in chemical sensors and biosensors.Many types of multi-layered films have been prepared in an alternatively assembled organic-inorganic and layer-by-layer manner. We will focus on the alternatively organized organic surfactant and metal-complex films and their conversion into electrocatalytically active films. Especially, we will demonstrate the preparation of bifunctional films for the detection of two different but correlated species, such as nitric oxide and oxygen, in biomedia.

  3. Electrocatalytic Organic-Inorganic Hybrid Films and Their Applications in Chemical Sensors and Biosensors

    Institute of Scientific and Technical Information of China (English)

    LI; XiaoYuan

    2001-01-01

    In this report, we will present the organic-inorganic hybrid molecular films prepared in our group and their applications in chemical sensors and biosensors.Many types of multi-layered films have been prepared in an alternatively assembled organic-inorganic and layer-by-layer manner. We will focus on the alternatively organized organic surfactant and metal-complex films and their conversion into electrocatalytically active films. Especially, we will demonstrate the preparation of bifunctional films for the detection of two different but correlated species, such as nitric oxide and oxygen, in biomedia.  ……

  4. Chemical Profiles of Microalgae with Emphasis on Lipids: Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Benemann, J. R.; Tillett, D. M.; Suen, Y.; Hubbard, J.; Tornabene, T. G.

    1986-02-01

    This final report details progress during the third year of this subcontract. The overall objective of this subcontract was two fold: to provide the analytical capability required for selecting microalgae strains with high energy contents and to develop fundamental knowledge required for optimizing the energy yield from microalgae cultures. The progress made towards these objectives during this year is detailed in this report.

  5. In Situ Sensors for the Chemical Industry- Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Tate, J D; Knittel, Trevor

    2006-06-30

    The project focused on analytical techniques that can be applied in situ. The innovative component of this project is the focus on achieving a significant breakthrough in two of the three primary Process Analytical (PA) fields. PA measurements can roughly be broken down into:Single component measurements, Multiple component measurements and Multiple component isomer analysis. This project targeted single component measurements and multiple component measurements with two basic technologies, and to move these measurements to the process, achieving many of the process control needs. During the project the following achievements were made: Development of a low cost Tunable Diode Laser (TDL) Analyzer system for measurement of 1) Oxygen in process and combustion applications, 2) part per million (ppm) H2O impurities in aggressive service, 3) ppm CO in large scale combustion systems. This product is now commercially available Development of a process pathlength enhanced (high sensitivity) Laser Based Analyzer for measurement of product impurities. This product is now commercially available. Development of signal processing methods to eliminate measurement errors in complex and changing backgrounds (critical to chemical industry measurements). This development is incorporated into 2 commercially available products. Development of signal processing methods to allow multi-component measurements in complex chemical streams. This development is incorporated into 2 commercially available products. Development of process interface designs to allow in-situ application of TDL technology in aggressive (corrosive, high temperature, high pressure) commonly found in chemical processes. This development is incorporated in the commercially available ASI TDL analyzer. Field proving of 3 laser-based analyzer systems in process control and combustion applications at Dow Chemical. Laser based analyzers have been available for >5yrs, however significant product price/performance issues have

  6. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    OpenAIRE

    2015-01-01

    To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition): SILAR (Successive Ionic Layer Adsorption and Reaction) and PCBD (Photo Chemical Bath Deposition), all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap ...

  7. PWR steam generator chemical cleaning, Phase I. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Rothstein, S.

    1978-07-01

    United Nuclear Industries (UNI) entered into a subcontract with Consolidated Edison Company of New York (Con Ed) on August 8, 1977, for the purpose of developing methods to chemically clean the secondary side tube to tube support crevices of the steam generators of Indian Point Nos. 1 and 2 PWR plants. This document represents the first reporting on activities performed for Phase I of this effort. Specifically, this report contains the results of a literature search performed by UNI for the purpose of determining state-of-the-art chemical solvents and methods for decontaminating nuclear reactor steam generators. The results of the search sought to accomplish two objectives: (1) identify solvents beyond those proposed at present by UNI and Con Ed for the test program, and (2) confirm the appropriateness of solvents and methods of decontamination currently in use by UNI.

  8. Chemical Bath Deposition of Nickel Sulphide (Ni4S3 Thin Films

    Directory of Open Access Journals (Sweden)

    Darren TEO

    2010-12-01

    Full Text Available Thin films of nickel sulphide were deposited from aqueous baths on indium tin oxide glass substrate. The chemical bath contained nickel sulphate, sodium thiosulfate and triethanolamine solutions. The aim of the present study was to analyze the different experimental conditions to prepare Ni4S3 thin films using chemical bath deposition technique. The structural, morphological and optical properties of nickel sulphide thin films were obtained by X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer will be presented. The properties of the films varied with the variation in the deposition parameters. The films deposited at longer deposition time using lower concentration in more acidic medium showed improved crystallinity, good uniformity and better adhesion to the substrate. Films showed band gap of 0.35 eV and exhibited p-type semiconductor behaviour.

  9. Imprint Control of BaTiO3 Thin Films via Chemically Induced Surface Polarization Pinning.

    Science.gov (United States)

    Lee, Hyungwoo; Kim, Tae Heon; Patzner, Jacob J; Lu, Haidong; Lee, Jung-Woo; Zhou, Hua; Chang, Wansoo; Mahanthappa, Mahesh K; Tsymbal, Evgeny Y; Gruverman, Alexei; Eom, Chang-Beom

    2016-04-13

    Surface-adsorbed polar molecules can significantly alter the ferroelectric properties of oxide thin films. Thus, fundamental understanding and controlling the effect of surface adsorbates are crucial for the implementation of ferroelectric thin film devices, such as ferroelectric tunnel junctions. Herein, we report an imprint control of BaTiO3 (BTO) thin films by chemically induced surface polarization pinning in the top few atomic layers of the water-exposed BTO films. Our studies based on synchrotron X-ray scattering and coherent Bragg rod analysis demonstrate that the chemically induced surface polarization is not switchable but reduces the polarization imprint and improves the bistability of ferroelectric phase in BTO tunnel junctions. We conclude that the chemical treatment of ferroelectric thin films with polar molecules may serve as a simple yet powerful strategy to enhance functional properties of ferroelectric tunnel junctions for their practical applications.

  10. Chemical production from industrial by-product gases: Final report

    Energy Technology Data Exchange (ETDEWEB)

    Lyke, S.E.; Moore, R.H.

    1981-04-01

    The potential for conservation of natural gas is studied and the technical and economic feasibility and the implementation of ventures to produce such chemicals using carbon monoxide and hydrogen from byproduct gases are determined. A survey was performed of potential chemical products and byproduct gas sources. Byproduct gases from the elemental phosphorus and the iron and steel industries were selected for detailed study. Gas sampling, preliminary design, market surveys, and economic analyses were performed for specific sources in the selected industries. The study showed that production of methanol or ammonia from byproduct gas at the sites studied in the elemental phosphorus and the iron and steel industries is technically feasible but not economically viable under current conditions. Several other applications are identified as having the potential for better economics. The survey performed identified a need for an improved method of recovering carbon monoxide from dilute gases. A modest experimental program was directed toward the development of a permselective membrane to fulfill that need. A practical membrane was not developed but further investigation along the same lines is recommended. (MCW)

  11. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Science.gov (United States)

    Shaji, S.; Garcia, L. V.; Loredo, S. L.; Krishnan, B.; Aguilar Martinez, J. A.; Das Roy, T. K.; Avellaneda, D. A.

    2017-01-01

    Antimony sulfide (Sb2S3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb2S3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb2S3 thin films for optoelectronic applications.

  12. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization.

    Science.gov (United States)

    Güzeldir, Betül; Sağlam, Mustafa

    2015-11-05

    Different chemical methods such as Successive Ionic Layer Adsorption and Reaction (SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide thin films on the glass substrates. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) spectroscopy and UV-vis spectrophotometry. The XRD and SEM studies showed that all the films exhibit polycrystalline nature and crystallinity of copper selenide thin films prepared with spray pyrolysis greater than spin coating and SILAR methods. From SEM and AFM images, it was observed copper selenide films were uniform on the glass substrates without any visible cracks or pores. The EDX spectra showed that the expected elements exist in the thin films. Optical absorption studies showed that the band gaps of copper selenide thin films were in the range 2.84-2.93 eV depending on different chemical methods. The refractive index (n), optical static and high frequency dielectric constants (ε0, ε∞) values were calculated by using the energy bandgap values for each deposition method. The obtained results from different chemical methods revealed that the spray pyrolysis technique is the best chemical deposition method to fabricate copper selenide thin films. This absolute advantage was lead to play key roles on performance and efficiency electrochromic and photovoltaic devices.

  13. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  14. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying substrat

  15. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Gellings, P.J.; Vendel, van de D.; Metselaar, H.S.C.; Corbach, van H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical pro

  16. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    Science.gov (United States)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  17. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    Directory of Open Access Journals (Sweden)

    Florian Waltz

    2015-03-01

    Full Text Available In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps, a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step. In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  18. Chemical bath deposition of indium sulphide thin films: preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Ennaoui, A.; Patil, P.S.; Giersig, M.; Diesner, K.; Muller, M.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1999-02-26

    Indium sulphide (In{sub 2}S{sub 3}) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In{sub 2}S{sub 3} thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (element of phase). The optical band gap of In{sub 2}S{sub 3} thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. (orig.) 27 refs.

  19. MgB{sub 2} thin films by hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xi, X.X. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]. E-mail: xxx4@psu.edu; Pogrebnyakov, A.V. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Zhuang, C.G. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Physics, Peking University, Beijing 100871 (China); Li, Qi [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D.R. [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Y.B.; Tian, W.; Pan, X.Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Cybart, S.A. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Dynes, R.C. [Department of Physics, University of California, Berkeley, CA 94720 (United States)

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB{sub 2} thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB{sub 2} films. The epitaxial pure MgB{sub 2} films grown by HPCVD show higher-than-bulk T {sub c} due to tensile strain in the films. The HPCVD films are the cleanest MgB{sub 2} materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB{sub 2}. The carbon-alloyed HPCVD films demonstrate record-high H {sub c2} values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB{sub 2} Josephson junctions.

  20. Effect of indium doping on zinc oxide films prepared by chemical spray pyrolysis technique

    Indian Academy of Sciences (India)

    Girjesh Singh; S B Shrivastava; Deepti Jain; Swati Pandya; T Shripathi; V Ganesan

    2010-10-01

    We report the conducting and transparent In doped ZnO films fabricated by a homemade chemical spray pyrolysis system (CSPT). The effect of In concentration on the structural, morphological, electrical and optical properties have been studied. These films are found to show (0 0 2) preferential growth at low indium concentrations. An increase in In concentration causes a decrease in crystalline quality of films as confirmed by X-ray diffraction technique which leads to the introduction of defects in ZnO. Indium doping also significantly increased the electron concentrations, making the films heavily type. However, the crystallinity and surface roughness of the films decreases with increase in indium doping content likely as a result of the formation of smaller grain size, which is clearly displayed in AFM images. Typical optical transmittance values in the order of (80%) were obtained for all films. The lowest resistivity value of 0.045 -m was obtained for film with 5% indium doping.

  1. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    A I Oliva; J E Corona; R Patiño; A I Oliva-Avilés

    2014-04-01

    Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical properties of CdS films were investigated. The morphology, thickness, bandgap energy, crystalline structure and elemental composition of Zn- and Cu-doped CdS films were investigated and compared to the undoped CdS films properties. Both Zn- and Cu-doped CdS films presented a cubic crystalline structure with (1 1 1) as the preferential orientation. Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped CdS films. Zn-doped CdS films presented higher thickness and roughness values than those of Cu-doped CdS films. From the photoluminescence results, it is suggested that the inclusion of Zn and Cu into CdS crystalline structure promotes the formation of acceptor levels above the CdS valence band, resulting in lower bandgap energy values for the doped CdS films.

  2. Magnetic and magneto-optical properties of Co-P films prepared by chemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chzhan, A.V., E-mail: avchz@mail.ru [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, Krasnoyarsk 660041 (Russian Federation); Patrin, G.S. [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, Krasnoyarsk 660041 (Russian Federation); Kiparisov, S.Ya.; Seredkin, V.A.; Burkova, L.V.; Velikanov, D.A. [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation)

    2011-10-15

    Features in the formation of chemically deposited polycrystalline Co-P films with thicknesses of a few nanometers are established by analyzing film surface morphology and variation in the film magnetization. It is shown that in the thickness range below 30 nm the polar Kerr effect value {theta}{sub K} changes nonmonotonically and depends on a wavelength of the incident light. For the films thicker than 30 nm, this value depends weakly on both the thickness and the wavelength. These features in the {theta}{sub K} behavior are attributed to the Faraday effect, which is revealed at small thicknesses upon light reflection from the lower surface of a magnetic layer. It is found that the Faraday effect in the Co-P films exceeds that in the Co films by a factor of more than two. This effect is assumed to be caused by the presence of a Pd underlayer in the samples under study. - Highlights: > Chemically deposited Co-P films are investigated. > Features of the polar Kerr effect in these films with thickness from 1 to 50 nm are considered. > It is shown that the Faraday rotation angle in the Co-P films exceeds that in the Co films by a factor of two. > Hysteresis loops and magnetization values are presented.

  3. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  4. Chemical temperature indicators for geothermal applications. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gaven, J.V. Jr.; Bak, C.S.; Jones, V.V.; Grow, B.

    1978-03-01

    The objective of this program was the development of a simple, reliable method for temperaure measurement in geotherml wells duing drilling operations. The method of choice involves the use of a series of chemical temperature indicator materials, with sharply defined melting temperatures over the temperature range 80/sup 0/C less than or equal to T less than or equal to 350/sup 0/C. The most promising candidate temperature indicator materials were selected for laboratory experimentation. Differential Scanning Calorimeter measurements were used to determine normal melting point, sharpness of melting point and heat of fusion of the candidate materials. As a result of these experiments, 42 alloys and 9 organic compounds were demonstrated to be acceptable temperature indicators. Since 7 organics had melting temperatures close to corresponding alloys, the useful series of temperature indicators is comprised of 44 materials. Experiments were carried out to develop a configuraion for the indicators compatible with direct addition to drilling muds. Preliminary experimentation was performed on stress resistance and hydrodynamic characteristics of the indicator configuration. The temperature indicators can be made in production quantities at an average of $1.00/each or less. Recommendations are made for testing the indicator configurations at elevated pressures in drilling fluid and for carrying out full scale field testing of the indicators under a variety of geothermal conditions.

  5. Volatile organic chemical emissions from carpets. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Hodgson, A.T.; Wooley, J.D.; Daisey, J.M.

    1992-04-01

    The primary objective of this research, was to measure the emission rates of selected individual VOC, including low molecular-weight aldehydes, released by samples of four new carpets that are typical of the major types of carpets used in residences, schools and offices. The carpet samples were collected directly from the manufacturers` mills and packaged to preserve their chemical integrity. The measurements of the concentrations and emission rates of these compounds were made under simulated indoor conditions in a 20-M{sup 3} environmental chamber designed specifically for investigations of VOC. The measurements were conducted over a period of one week following the installation of the carpet samples in the chamber. Duplicate experiments were conducted for one carpet. In addition, the concentrations and emission rates of VOC resulting from the installation of a new carpet in a residence were measured over a period of seven weeks. The stabilities of the week-long ventilation rates and temperatures were one percent relative standard deviation. The four carpets emitted a variety of VOC, 40 of which were positively identified. Eight of these were considered to be dominant. They were (in order of chromatographic retention time) formaldehyde, vinyl acetate, 2,2,4-trimethylpentane (isooctane), 1,2-propanediol (propylene glycol), styrene, 2-ethyl-l-hexanol, 4-phenylcyclohexene (4-PCH), and 2,6 di-tert-butyl-4-methylphenol (BHT). With the exception of formaldehyde, only limited data are available on the toxicity and irritancy of these compounds at low concentrations. Therefore, it is difficult to determine at this time the potential magnitude of the health and comfort effects that may occur among the population from exposures to emissions from new carpets. The concentrations and emission rates of most compounds decreased rapidly over the first 12 h of the experiments.

  6. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  7. Photoluminescence of amorphous carbon films fabricated by layer-by-layer hydrogen plasma chemical annealing method

    Institute of Scientific and Technical Information of China (English)

    徐骏; 黄晓辉; 李伟; 王立; 陈坤基

    2002-01-01

    A method in which nanometre-thick film deposition was alternated with hydrogen plasma annealing (layer-by-layermethod) was applied to fabricate hydrogenated amorphous carbon films in a conventional plasma-enhanced chemicalvapour deposition system. It was found that the hydrogen plasma treatment could decrease the hydrogen concentrationin the films and change the sp2/sp3 ratio to some extent by chemical etching. Blue photoluminescence was observed atroom temperature, as a result of the reduction of sp2 clusters in the films.

  8. Atomic Force Microscopy Studies on The Surface Morphologies of Chemical Bath Deposited Cus Thin Films

    Directory of Open Access Journals (Sweden)

    Ho Soonmin

    2016-06-01

    Full Text Available In this work, copper sulphide thin films were deposited onto microscope glass slide by chemical bath deposition technique. The tartaric acid was served as complexing agent to chelate with Cu2+ to obtain complex solution. The influence of pH value on the surface morphologies of the films has been particularly investigated using the atomic force microscopy technique. The atomic force microscopy results indicate that the CuS films deposited at pH 1 were uniform, compact and pinhole free. However, the incomplete surface coverage observed for the films prepared at high pH (pH 2 and 2.5 values.

  9. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  10. Electrical properties of chemically prepared nonstoichiometric CuIn(S,Se)2 thin films

    Indian Academy of Sciences (India)

    R H Bari; L A Patil; A Soni; G S Okram

    2007-04-01

    Polycrystalline thin films of copper indium sulphoselenide [CuIn(S,Se)2] were deposited on glass substrate by chemical bath deposition technique. The deposition parameters such as pH, temperature and time were optimized. A set of films having different elemental compositions was prepared by varying Cu/In ratio from 1.87–12.15. The films were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX). The chemical composition of the CuIn(S,Se)2 was found to be nonstoichiometric. The d.c. conductivities of the films were studied below and near room temperature. The thermo-electric power of the films was also measured and type of semiconductivity was ascertained.

  11. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  12. Tank 40 Final SB7b Chemical Characterization Results

    Energy Technology Data Exchange (ETDEWEB)

    Bannochie, C. J.

    2012-11-06

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass ? 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma ? atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma ? mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH-/other base analyses. Activities for U-233, U-235

  13. Tank 40 Final Sludge Batch 8 Chemical Characterization Results

    Energy Technology Data Exchange (ETDEWEB)

    Bannochie, Christopher J.

    2013-09-19

    A sample of Sludge Batch 8 (SB8) was pulled from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB8 WAPS sample was also analyzed for chemical composition, including noble metals, and fissile constituents, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to the Defense Waste Processing Facility (DWPF) as SB8. At SRNL, the 3-L Tank 40 SB8 sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 553 g sub-sample was removed. This sub-sample was then utilized for all subsequent slurry sample preparations. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon(r) vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass - 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB8 supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH-/other base, total inorganic carbon/total organic

  14. Synthesis of chiral polyaniline films via chemical vapor phase polymerization

    DEFF Research Database (Denmark)

    Chen, J.; Winther-Jensen, B.; Pornputtkul, Y.

    2006-01-01

    methods, such as cyclic voltammetry (CV), UV- vis spectroscopy, four- point probe conductivity measurement, Raman spectroscopy, circular dichroism spectroscopy, and scanning electron microscopy. The polyaniline films grown by this method not only showed high electrochemical activity, supported by CV...

  15. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  16. Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India); Panchal, A.K. [Department of Electrical Engineering, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India)

    2016-05-06

    First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the order of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.

  17. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  18. Final Hazard Categorization for the Remediation of the 116-C-3 Chemical Waste Tanks

    Energy Technology Data Exchange (ETDEWEB)

    T. M. Blakley; W. D. Schofield

    2007-09-10

    This final hazard categorization (FHC) document examines the hazards, identifies appropriate controls to manage the hazards, and documents the commitments for the 116-C-3 Chemical Waste Tanks Remediation Project. The remediation activities analyzed in this FHC are based on recommended treatment and disposal alternatives described in the Engineering Evaluation for the Remediation to the 116-C-3 Chemical Waste Tanks (BHI 2005e).

  19. High-temperature conductivity in chemical bath deposited copper selenide thin films

    Science.gov (United States)

    Dhanam, M.; Manoj, P. K.; Prabhu, Rajeev. R.

    2005-07-01

    This paper reports high-temperature (305-523 K) electrical studies of chemical bath deposited copper (I) selenide (Cu 2-xSe) and copper (II) selenide (Cu 3Se 2) thin films. Cu 2-xSe and Cu 3Se 2 have been prepared on glass substrates from the same chemical bath at room temperature by controlling the pH. From X-ray diffraction (XRD) profiles, it has been found that Cu 2-xSe and Cu 3Se 2 have cubic and tetragonal structures, respectively. The composition of the chemical constituent in the films has been confirmed from XRD data and energy-dispersive X-ray analysis (EDAX). It has been found that both phases of copper selenide thin films have thermally activated conduction in the high-temperature range. In this paper we also report the variation of electrical parameters with film thickness and the applied voltage.

  20. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  1. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Pérez-García Claudia Elena

    2015-01-01

    Full Text Available To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition: SILAR (Successive Ionic Layer Adsorption and Reaction and PCBD (Photo Chemical Bath Deposition, all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap of PbS films can be monitored by deposition process due to porosity-induced quantum confinement which depends on the parameters of the process. We expect that the techniques employed can be successfully used for production of optoelectronic devices.

  2. Analysis of gas absorption to a thin liquid film in the presence of a zero-order chemical reaction

    Science.gov (United States)

    Rajagopalan, S.; Rahman, M. M.

    1995-01-01

    The paper presents a detailed theoretical analysis of the process of gas absorption to a thin liquid film adjacent to a horizontal rotating disk. The film is formed by the impingement of a controlled liquid jet at the center of the disk and subsequent radial spreading of liquid along the disk. The chemical reaction between the gas and the liquid film can be expressed as a zero-order homogeneous reaction. The process was modeled by establishing equations for the conservation of mass, momentum, and species concentration and solving them analytically. A scaling analysis was used to determine dominant transport processes. Appropriate boundary conditions were used to solve these equations to develop expressions for the local concentration of gas across the thickness of the film and distributions of film height, bulk concentration, and Sherwood number along the radius of the disk. The partial differential equation for species concentration was solved using the separation of variables technique along with the Duhamel's theorem and the final analytical solution was expressed using confluent hypergeometric functions. Tables for eigenvalues and eigenfunctions are presented for a number of reaction rate constants. A parametric study was performed using Reynolds number, Ekman number, and dimensionless reaction rate as parameters. At all radial locations, Sherwood number increased with Reynolds number (flow rate) as well as Ekman number (rate of rotation). The enhancement of mass transfer due to chemical reaction was found to be small when compared to the case of no reaction (pure absorption), but the enhancement factor was very significant when compared to pure absorption in a stagnant liquid film. The zero-order reaction processes considered in the present investigation included the absorption of oxygen in aqueous alkaline solutions of sodiumdithionite and rhodium complex catalyzed carbonylation of methanol. Present analytical results were compared to previous theoretical

  3. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    Science.gov (United States)

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-08-01

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100-200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  4. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  5. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Hua [Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11790 (United States); Chou, Kang Wei [Henkel Ibérica S. A. Edificio Eureka, 08193, Campus UAB, Barcelona (Spain); Petrash, Stanislas [Henkel Corporation, 10 Finderne Avenue, Bridgewater, New Jersey 08807 (United States); Williams, Garth; Thieme, Juergen; Li, Li; Chen-Wiegart, Yu-chen Karen, E-mail: ycchen@bnl.gov [National Synchrotron Light Source II, Brookhaven National Laboratory, 743 Brookhaven Avenue, Upton, New York 11973-5000 (United States); Nykypanchuk, Dmytro [Center for Functional Nanomaterials, Brookhaven National Laboratory, 735 Brookhaven Avenue, Upton, New York 11973-5000 (United States); Muto, Atsushi [Hitachi High Technologies America, 22610 Gateway Center Drive, Clarksburg, Maryland 20871 (United States)

    2016-08-29

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  6. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  7. Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD)

    Institute of Scientific and Technical Information of China (English)

    MA Yu-tian; GONG Zhu-Qing; XU Wei-Hong; HUANG Jian

    2006-01-01

    Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron microscopy, FTIR transmission,UV/VIS/NIR transmission and reflectance. The results show that the films structural and optical properties are influenced by many factors such as film thickness, crystallite size and substrate temperature. The films as thick as 111-133 nm have high IR transmission across the full 8-13 μm band and highly blocking in the solar spectral region elsewhere, which indicates that Te films thickness in this region can be used as good solar radiation shields in radiative cooling devices.

  8. Structural and Optical Properties of CdS Thin Film Grown by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    S. Rajpal

    2013-07-01

    Full Text Available In this work we report synthesis and optical characterization of CdS thin films coated on glass substrate. The films were deposited using chemical bath deposition method. Scanning Electron microscopy shows a uniform film of CdS film at particular concentration and dipping time. The Energy Dispersive spectroscopy reveals the presence of Cd and S in the CdS film. X-Ray diffraction confirms the cubic structure of CdS deposited on glass and amorphous nature of glass. Optical and photoluminescence studies were done using UV-Visible spectroscopy and Photoluminescence spectroscopy respectively. We have determined bandgap by analyzing UV-Visible spectra results. Wettability studies were done using Optical Contact Angle, which confirms the hydrophobic nature of the CdS films.

  9. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  10. Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

    2010-02-24

    Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

  11. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  12. TANK 40 FINAL SB7B CHEMICAL CHARACTERIZATION RESULTS

    Energy Technology Data Exchange (ETDEWEB)

    Bannochie, C.

    2012-03-15

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to the Defense Waste Processing Facility (DWPF) as SB7b. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass - 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base

  13. Chemically deposited thin films of sulfides and selenides of antimony and bismuth as solar energy materials

    Science.gov (United States)

    Nair, M. T. S.; Nair, Padmanabhan K.; Garcia, Victor M.; Pena, Y.; Arenas, O. L.; Garcia, J. C.; Gomez-Daza, O.

    1997-10-01

    Chemical bath deposition techniques for bismuth sulfide, bismuth selenide, antimony sulfide, and antimony selenide thin films of about 0.20 - 0.25 micrometer thickness are reported. All these materials may be considered as solar absorber films: strong optical absorption edges, with absorption coefficient, (alpha) , greater than 104 cm-1, are located at 1.31 eV for Bi2Se3, 1.33 eV for Bi2S3, 1.8 eV for Sb2S3, and 1.35 eV for Sb2Se3. As deposited, all the films are nearly amorphous. However, well defined crystalline peaks matching bismuthinite (JCPDS 17- 0320), paraguanajuatite (JCPDS 33-0214), and stibnite (JCPDS 6-0474) and antimony selenide (JCPDS 15-0861) for Bi2S3, Bi2Se3, Sb2S3 and Sb2Se3 respectively, are observed when the films are annealed in nitrogen at 300 degrees Celsius. This is accompanied by a substantial modification of the electrical conductivity in the films: from 10-7 (Omega) -1 cm-1 (in as prepared films) to 10 (Omega) -1 cm-1 in the case of bismuth sulfide and selenide films, and enhancement of photosensitivity in the case of antimony sulfide films. The chemical deposition of a CuS/CuxSe film on these Vx- VIy films and subsequent annealing at 300 degrees Celsius for 1 h at 1 torr of nitrogen leads to the formation of p-type films (conductivity of 1 - 100 (Omega) -1 cm-1) of multinary composition. Among these, the formation of Cu3BiS3 (JCPDS 9-0488) and Cu3SbS4 (JCPDS 35- 0581), CuSbS2 (JCPDS 35-0413) have been clearly detected. Solar energy applications of these films are suggested.

  14. Ligand field effect at oxide-metal interface on the chemical reactivity of ultrathin oxide film surface.

    Science.gov (United States)

    Jung, Jaehoon; Shin, Hyung-Joon; Kim, Yousoo; Kawai, Maki

    2012-06-27

    Ultrathin oxide film is currently one of the paramount candidates for a heterogeneous catalyst because it provides an additional dimension, i.e., film thickness, to control chemical reactivity. Here, we demonstrate that the chemical reactivity of ultrathin MgO film grown on Ag(100) substrate for the dissociation of individual water molecules can be systematically controlled by interface dopants over the film thickness. Density functional theory calculations revealed that adhesion at the oxide-metal interface can be addressed by the ligand field effect and is linearly correlated with the chemical reactivity of the oxide film. In addition, our results indicate that the concentration of dopant at the interface can be controlled by tuning the drawing effect of oxide film. Our study provides not only profound insight into chemical reactivity control of ultrathin oxide film supported by a metal substrate but also an impetus for investigating ultrathin oxide films for a wider range of applications.

  15. Investigation of chemical bath deposition of ZnO thin films using six different complexing agents

    Energy Technology Data Exchange (ETDEWEB)

    Khallaf, Hani; Chai, Guangyu; Lupan, Oleg; Heinrich, Helge; Park, Sanghoon; Schulte, Alfons; Chow, Lee, E-mail: chow@mail.ucf.ed [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States)

    2009-07-07

    Chemical bath deposition of ZnO thin films using six different complexing agents, namely ammonia, hydrazine, ethanolamine, methylamine, triethanolamine and dimethylamine, is investigated. As-grown films were mainly ZnO{sub 2} with a band gap around 4.3 eV. Films annealed at 400 deg. C were identified as ZnO with a band gap around 3.3 eV. X-ray diffraction and micro-Raman spectroscopy revealed that as-grown films consist mainly of cubic zinc peroxide that was transformed into hexagonal ZnO after annealing. Rutherford backscattering spectroscopy (RBS) detected excess oxygen content in ZnO films after annealing. Fourier transform infrared spectroscopy of as-grown films showed a broad absorption band around 3300 cm{sup -1} suggesting that the as-grown films may consist of a mixture of zinc peroxide and zinc hydroxide. X-ray photoelectron spectroscopy multiplex spectra of the O 1s peak were found to be consistent with film stoichiometry revealed by RBS. High-resolution transmission electron micrographs showed small variations of the order of 10 nm in film thickness which corresponds to the average grain size. A carrier density as high as 2.24x10{sup 19} cm{sup -3} and a resistivity as low as 6.48 x 10{sup -1} OMEGA cm were obtained for films annealed at 500 deg. C in argon ambient.

  16. High quality antireflective ZnS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tec-Yam, S.; Rojas, J.; Rejon, V. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico); Oliva, A.I., E-mail: oliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico)

    2012-10-15

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl{sub 2}, NH{sub 4}NO{sub 3}, and CS(NH{sub 2}){sub 2} were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 Degree-Sign C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300-800 nm wavelength range, and a reflectance below 25% in the UV-Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: Black-Right-Pointing-Pointer High quality ZnS thin films were prepared by chemical bath deposition (CBD). Black-Right-Pointing-Pointer Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. Black-Right-Pointing-Pointer Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  17. Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Shiuh-Chuan HER

    2015-11-01

    Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

  18. Characteristic comparison of metal films coated onto the cenosphere by chemical and magnetron sputtering methods

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Metal-coated cenospheres have been widely used in Industries. Different coating methods result in different characteristic metal films. Hie metal film on the cenosphere by chemical coating does not appear to be very smooth, exhibiting metal piled up and pin holes on the surface and leaving some spots uncoated. Meanwhile, the metal film is not tightly absorbed onto cenospheres and is easy to peel off. However, the metal film prepared by magnetron sputtering is compact, smooth and without pin holes. The film has good affinity to the cenosphere surface. Such films do not separate with it even when the cenosphere is crushed. Both the metal films give the same XRD patterns, indicating tnat the crystal structure of the metal films by these two methods is the same. Chemical coating is a complex process and harmful to the environment, but it fits ultrafine powder coating (the particle size can be less than 2 μm). The magnetron sputtering method is environmental friendly and works quickly, but this method requires specially designed equipment and does not work for ultrafine powders. If the particle size is less than 30 μm, the coating process is hard to carry on.

  19. Closed loop chemical systems for energy storage and transmission (chemical heat pipe). Final report

    Energy Technology Data Exchange (ETDEWEB)

    Vakil, H.B.; Flock, J.W.

    1978-02-01

    The work documents the anlaysis of closed loop chemical systems for energy storage and transmission, commonly referred to as the Chemical Heat Pipe (CHP). Among the various chemical reaction systems and sources investigated, the two best systems were determined to be the high temperature methane/steam reforming reaction (HTCHP) coupled to a Very High Temperature Gas Cooled Reactor (VHTR) and the lower temperature, cyclohexane dehydrogenation reaction (LTCHP) coupled to existing sources such as coal or light water reactors. Solar and other developing technologies can best be coupled to the LTCHP. The preliminary economic and technical analyses show that both systems could transport heat at an incremental cost of approximately $1.50/GJ/160 km (in excess of the primary heat cost of $2.50/GJ), at system efficiencies above 80%. Solar heat can be transported at an incremental cost of $3/GJ/160 km. The use of the mixed feed evaporator concept developed in this work contributes significantly to reducing the transportation cost and increasing the efficiency of the system. The LTCHP shows the most promise of the two systems if the technical feasibility of the cyclic closed loop chemical reaction system can be established. An experimental program for establishing this feasibility is recommended. Since the VHTR is several years away from commercial demonstration and the HTCHP chemical technology is well developed, future HTCHP programs should be aimed at VHTR and interface problems.

  20. Alloy Thin-films and Surfaces for New Materials. Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Sprunger, P.T.

    2003-08-10

    Within the framework of a DOE National Laboratory/EPSCoR state partnership, investigations by researchers at Louisiana State University and Oak Ridge National Laboratory were focused on revealing the unique nanophase properties of alloy thin-films and bimetallic surfaces. Employing a number of experimental preparation techniques and characterization probes (synchrotron-based angle-resolved and valence/core-level PES and variable-temperature STM/STS), the goal of this program was to elucidate of the interconnecting physical and chemical properties of a variety of alloy surfaces and thin-films, specifically, determining the correlation between atomic structure/composition, electronic structure, and catalytic/chemisorption properties of these nanoscale.

  1. High haze textured surface B-doped ZnO-TCO films on wet-chemically etched glass substrates for thin film solar cells

    Science.gov (United States)

    Xinliang, Chen; Jieming, Liu; Jia, Fang; Ze, Chen; Ying, Zhao; Xiaodan, Zhang

    2016-08-01

    Textured glass substrates with crater-like feature sizes of ˜5-30 μm were obtained using the chemical etching method through adjusting the treatment round (R). Pyramid-like boron-doped zinc oxide (ZnO:B) films with feature sizes of ˜300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition (MOCVD) technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO:B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO:B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO:B exhibited a high root mean square (RMS) roughness of ˜160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO:B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO:B was applied in the silicon (Si) based thin film solar cells. The high haze etched glass/ZnO:B substrates have potential merits for thin film solar cells. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

  2. Luminescent thin films by the chemical aerosol deposition technology (CADT)

    NARCIS (Netherlands)

    Martin, F.J.; Martin, F.J.; Albers, H.; Lambeck, Paul; Popma, T.J.A.; van de Velde, G.M.H.

    1992-01-01

    Zinc sulphide thin films have been deposited with CART using zinc chlorideand zinc acetylacetonate as Zn compounds and thiourea and 1,1,3,3-tetramethylthiourea as S compounds soluted in methanol, ethanol, isopropanol and cellosolve. After optimalization of the deposition process homogeneous layers

  3. Doping graphene films via chemically mediated charge transfer

    Directory of Open Access Journals (Sweden)

    Ishikawa Ryousuke

    2011-01-01

    Full Text Available Abstract Transparent conductive films (TCFs are critical components of a myriad of technologies including flat panel displays, light-emitting diodes, and solar cells. Graphene-based TCFs have attracted a lot of attention because of their high electrical conductivity, transparency, and low cost. Carrier doping of graphene would potentially improve the properties of graphene-based TCFs for practical industrial applications. However, controlling the carrier type and concentration of dopants in graphene films is challenging, especially for the synthesis of p-type films. In this article, a new method for doping graphene using the conjugated organic molecule, tetracyanoquinodimethane (TCNQ, is described. Notably, TCNQ is well known as a powerful electron accepter and is expected to favor electron transfer from graphene into TCNQ molecules, thereby leading to p-type doping of graphene films. Small amounts of TCNQ drastically improved the resistivity without degradation of optical transparency. Our carrier doping method based on charge transfer has a huge potential for graphene-based TCFs.

  4. Structural, Mechanical and Optical Properties of Plasma-chemical Si-C-N Films

    Directory of Open Access Journals (Sweden)

    A.O. Kozak

    2014-11-01

    Full Text Available An influence of the substrate temperature in the range of 40-400 °C on the properties of the Si-C-N films deposited by plasma enhanced chemical vapor deposition (PECVD technique using hexamethyldisilazane is analyzed. Study of the structure, chemical bonding, surface morphology, mechanical properties and energy gap of the obtained films was carried out using X-ray diffraction, infrared spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, optical measurements and nanoindentation. It was established that all the films were X-ray amorphous and had low surface roughness. Intensive hydrogen effusion from the films takes place, when substrate temperature increases up to 400 °C, which promotes a decrease of roughness and an increase in hardness and Young modules more than twice.

  5. Analysis of chemically deposited CdSe and CdS thin films

    CERN Document Server

    Osuji, R U

    2002-01-01

    We have successfully deposited quality polycrystalline thin films of CdSe and CdS on Corning 7059 glass slides by the electroless chemical bath technique at room temperature (~27 $^\\circ$C). X-ray analysis confirmed the successful deposition of CdSe and CdS thin films. Our grown CdSe film thickness ranged from 0.10 $\\mu$m. to 0.80 $\\pm$ 0.01 $\\mu$m and the CdS film thickness ranged from 0.10 $\\mu$m to 1.00 $\\pm$ 0.01 $\\mu$m. The scanning electron micrograph of the films reveals uniform film surface. The energy gaps, $E_g$ determined for our CdSe and CdS films have average values of 1.70 $\\pm$ 0.04 eV and 2.15 $\\pm$ 0.04 eV respectively. The films have high absorbance in the 0.35 $\\mu$m - 0.85 $\\mu$m range. These qualities make them suitable for use in thin film solar cell technology.

  6. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  7. (001) Oriented piezoelectric films prepared by chemical solution deposition on Ni foils

    Energy Technology Data Exchange (ETDEWEB)

    Yeo, Hong Goo, E-mail: hxy162@psu.edu; Trolier-McKinstry, Susan [Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    Flexible metal foil substrates are useful in some microelectromechanical systems applications including wearable piezoelectric sensors or energy harvesters based on Pb(Zr,Ti)O₃ (PZT) thin films. Full utilization of the potential of piezoelectrics on metal foils requires control of the film crystallographic texture. In this study, (001) oriented PZT thin films were grown by chemical solution deposition (CSD) on Ni foil and Si substrates. Ni foils were passivated using HfO₂ grown by atomic layer deposition in order to suppress substrate oxidation during subsequent thermal treatment. To obtain the desired orientation of PZT film, strongly (100) oriented LaNiO₃ films were integrated by CSD on the HfO₂ coated substrates. A high level of (001) LaNiO₃ and PZT film orientation were confirmed by X-ray diffraction patterns. Before poling, the low field dielectric permittivity and loss tangents of (001) oriented PZT films on Ni are near 780 and 0.04 at 1 kHz; the permittivity drops significantly on poling due to in-plane to out-of-plane domain switching. (001) oriented PZT film on Ni displayed a well-saturated hysteresis loop with a large remanent polarization ~36 μC/cm², while (100) oriented PZT on Si showed slanted P-E hysteresis loops with much lower remanent polarizations. The |e{sub 31,f}| piezoelectric coefficient was around 10.6 C/m² for hot-poled (001) oriented PZT film on Ni.

  8. Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

    Indian Academy of Sciences (India)

    R H Bari; L A Patil; P P Patil

    2006-10-01

    Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted.

  9. Characterization of nano-scale protective oxide films: application on metal chemical mechanical planarization

    OpenAIRE

    Karagöz, Ayşe; Craciun, V.; Başım, Gül Bahar

    2015-01-01

    This study focuses on the characterization of nano-scale metal oxide films for chemical mechanical planarization (CMP) applications. The protective nature of the self-grown metal oxide layers in the CMP slurry environment enable topographic selectivity required for metallization of interconnects. Tungsten was selected as the model metal film to study the formation and characteristics of the metal oxide nano-layers since tungsten CMP is very well-established in conventional semiconductor manuf...

  10. Fabrication of a molecular-level multilayer film on organic polymer surfaces via chemical bonding assembly.

    Science.gov (United States)

    Zhao, Hongchi; Yang, Peng; Deng, Jianping; Liu, Lianying; Zhu, Jianwu; Sui, Yuan; Lu, Jiaoming; Yang, Wantai

    2007-02-13

    A fresh multilayer film was fabricated on a molecular level and successfully tethered to the surface of a hydroxylated organic substrate via chemical bonding assembly (CBA). Sulfate anion groups (SO4-) were preintroduced onto the surface of biaxially oriented polypropylene (BOPP) films via a reference method. Upon hydrolysis of the SO4- groups, hydroxyl groups (--OH) were formed that subsequently acted as initial reagents for a series of alternate reactions with terephthalyl chloride (TPC) and bisphenol A (BPA). A stable and well-defined multilayer film was thus fabricated via the CBA method. As a result of the nanoscale multilayer fresh film being abundant with reactive groups, it is believed that the film and its fabrication method should provide a fundamental platform for further surface functionalization and direct the design of advanced materials with desired properties.

  11. Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

    KAUST Repository

    Barasheed, Abeer Z.

    2013-01-01

    In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.

  12. Synthesis and Characterization of SnO2 Thin Films by Chemical Bath Deposition

    Science.gov (United States)

    Rifai, Aditia; Iqbal, Muhammad; Nugraha; Nuruddin, Ahmad; Suyatman; Yuliarto, Brian

    2011-12-01

    SnO2 thin films were deposited on glass substrate by chemical bath deposition (CBD) with stannous chloride (SnCl2..2H2O) as a precursor and urea (CO(NH2)2) as a buffer. X-Ray Diffraction (XRD) are used to characterize the structure of the films; the surface morphology of the films were observed by Scanning Electron Microscope (SEM). Using this techniques, we specify the effect of stannous chloride concentration and weight ratio of urea/H2O on the crystallinity and morphology of these films. The rutile structure corresponding (110), (101) and (211) planes of SnO2 is obtained. The increasing of stannous chloride concentration and the decreasing weight ratio of urea/H2O is found to improve the crystallinity of the film. The average diameter of grain size is about 96 nm.

  13. Ethanol Sensing Properties of Nanosheets ZnO Thin Films Prepared by Chemical Bath Deposition

    Science.gov (United States)

    Julia, Sri; Nururddin, Ahmad; Nugraha, Suyatman; Yuliarto, Brian

    2011-12-01

    Nanosheets ZnO thin films were successfully fabricated on alumina substrate by chemical bath deposition method using Zinc Nitrate Tetra hydrate as precursor. Films were annealed at 300 °C for 30 minutes and observed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive X-Ray Spectroscopy (EDS) to know crystal phase and structure, surface morphology, and elemental composition respectively. The gas sensing performance of ZnO thin films was studied on exposure to ethanol gas sensing in various concentration (300 and 600 ppm). The films showed higher response towards ethanol gas sensing at optimized temperature of 250 °C and exhibited excellent sensitivity of 62.45% upon exposure 300 ppm and 69% upon exposure of 600 ppm ethanol gas sensing. Further, the response and recovery times of ZnO thin films to ethanol become shorter at higher operating temperatures. A possible mechanism of ethanol sensing has been explained.

  14. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  15. Influence of substrates on the structural and optical properties of chemically deposited CdS films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hyeong [School of Electronic and Information Engineering, Kunsan National University, San 68, Miryong-dong, Kunsan, Jeollabuk-do, 573-701 (Korea, Republic of)]. E-mail: jhyi@kunsan.ac.kr

    2007-05-31

    Cadmium sulfide (CdS) films were chemically deposited on glass, polycarbonate (PC), polyethylene terephthalate (PET), and Si wafer. Effects of substrate types on the structural and optical properties of the films were investigated. There is a preferential orientation of the crystallites in the film grown on the glass along the c-axis (perpendicular to the plane of the substrate) producing a strong hexagonal (0 0 2) or cubic (1 1 1) peak, regardless of the presence of ITO coating. However, such preferential orientation decreases or disappears when the deposition was made onto PC or PET substrates. The crystallinity of CdS films on glass and Si is better than that of the other ones. The average transmittance of the films on PC and PET is about 50% and 55%, respectively, and increases up to 70% for glass substrate. The improvement of the transmittance was obtained from ITO-coated substrates.

  16. Nanocrystalline Diamond Films Deposited by Electron Assisted Hot Filament Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.

  17. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Viswanathan S Saji; Han Cheol Choe

    2010-06-01

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was ∼ 2000 and tan ∼ 0.05.

  18. Enhancing Chemical Stability of Electroplated Cu Films by Engineering Electrolyte Chemistry and Twinning Structure

    Science.gov (United States)

    Yang, Chih-Jie; Huang, Chun-Lung; Liao, Chien-Neng

    2015-07-01

    The effects of an electrolyte additive and twinning structure on the corrosion characteristics of electroplated Cu films have been investigated. Four different Cu films were individually deposited with and without benzotriazole (BTA) in the electrolyte using the direct-current (DC) and pulsed-current (PC) plating techniques. The Cu films plated with BTA additive showed improved corrosion resistance according to electrochemical polarization testing and postetching morphological inspection. Moreover, the PC-plated films that had dense nanoscale twin boundaries appeared to have higher chemical stability than the DC-plated ones. It is proposed that the presence of twin-modified grain boundary segments suppresses corrosion along the grain boundary network and improves the corrosion resistance of electroplated Cu films.

  19. A novel chemical synthesis and characterization of Mn 3O 4 thin films for supercapacitor application

    Science.gov (United States)

    Dubal, D. P.; Dhawale, D. S.; Salunkhe, R. R.; Pawar, S. M.; Lokhande, C. D.

    2010-05-01

    Mn 3O 4 thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), field emission scanning electron microscopy (FESEM), wettability test and optical absorption studies. The XRD pattern showed that the Mn 3O 4 films exhibit tetragonal hausmannite structure. Formation of manganese oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.30 eV. Mn 3O 4 film surface showed hydrophilic nature with water contact angle of 55°. The supercapacitive properties of Mn 3O 4 thin film investigated in 1 M Na 2SO 4 electrolyte showed maximum supercapacitance of 314 F g -1 at scan rate 5 mV s -1.

  20. Novel chemical synthetic route and characterization of zinc selenide thin films

    Science.gov (United States)

    Hankare, P. P.; Chate, P. A.; Delekar, S. D.; Asabe, M. R.; Mulla, I. S.

    2006-11-01

    Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap ‘Eg’ for the film was found to be 2.81 eV and electrical conductivity in the order of 10-8(Ω cm)-1 with n-type conduction mechanism.

  1. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    Science.gov (United States)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  2. Surface morphology stabilization by chemical sputtering in carbon nitride film growth

    Energy Technology Data Exchange (ETDEWEB)

    Buijnsters, J G [Institute for Molecules and Materials (IMM), Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Vazquez, L [Instituto de Ciencia de Materiales de Madrid (CSIC), C/Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2008-01-07

    We have studied the influence of chemical sputtering effects on the morphology of carbon nitride films grown on silicon substrates by electron cyclotron resonance chemical vapour deposition. This study has been performed by comparing the evolution of their morphology with that of hydrogenated amorphous carbon films grown under similar conditions, where these effects are not present. When chemical sputtering effects operate we observe a film surface stabilization for length scales in the 60-750 nm range after a threshold roughness of about 3-4 nm has been developed. This stabilization is explained on the basis of the re-emission of nitrogen etching species, which is confirmed by growth experiments on microstructured substrates. (fast track communication)

  3. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  4. Physical properties of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ximello-Quiebras, J.N.; Contreras-Puente, G.; Aguilar-Hernandez, J. [Escuela Superior de Fisica y Matematicas-Instituto Politecnico Nacional, Edificio 9, U.P.A.L.M. 07738 DF (Mexico); Santana-Rodriguez, G.; Arias-Carbajal Readigos, A. [Facultad de Fisica IMRE, Universidad de la Habana, 10400 La Habana (Cuba)

    2004-05-01

    Cadmium sulfide films of different thicknesses were deposited by chemical bath deposition (CBD) from a bath containing cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea. The XRD patterns show that the films have a hexagonal phase with a preferential (002) orientation. The photoluminescence spectra show a defect structure, characteristics of the CdS films obtained by CBD. The electrical behavior in dark and under illumination, the optical properties and the band gap value reported in this work is in agreement with that reported in the literature.

  5. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Science.gov (United States)

    Acharya, Narendra; Wolak, Matthäus A.; Tan, Teng; Lee, Namhoon; Lang, Andrew C.; Taheri, Mitra; Cunnane, Dan; Karasik, Boris. S.; Xi, X. X.

    2016-08-01

    In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc) and high critical current density (Jc). The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  6. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ndiege, Nicholas [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: ndiege@uiuc.edu; Subramanian, Vaidyanathan [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: ravisv@unr.edu; Shannon, Mark A. [Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green street, Urbana, IL 61801 (United States)], E-mail: mshannon@uiuc.edu; Masel, Richard I. [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: r-masel@uiuc.edu

    2008-10-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 {mu}m using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC{sub 2}H{sub 5}){sub 5}) vapor on the deposition surface.

  7. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Directory of Open Access Journals (Sweden)

    Narendra Acharya

    2016-08-01

    Full Text Available In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc and high critical current density (Jc. The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  8. Studies on chemical bath deposited zinc sulphide thin films with special optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Ladar, Maria [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); ' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Popovici, Elisabeth-Jeanne [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania)]. E-mail: jennypopovici@yahoo.com; Baldea, Ioan [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); Grecu, Rodica [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Indrea, Emil [National Institute for R and D of Isotopic and Molecular Technology, Donath 71-103, 400293 Cluj-Napoca (Romania)

    2007-05-31

    Adherent and uniform zinc sulphide thin films were deposited on optical glass platelets from chemical bath containing thiourea, zinc acetate, ammonia and sodium citrate. The samples, as they were prepared were investigated by UV-vis absorption/reflection spectroscopy, fluorescence spectroscopy and X-ray diffraction. The effects of growth conditions such as reagent concentration and deposition technique (mono- and multi-layer) on optical and structural properties of the ZnS thin films have been studied. The ability of ZnS films to exhibit luminescent properties has also been investigated.

  9. Chemical surface deposition of cds thin films from CdI2 aqueous solution

    Directory of Open Access Journals (Sweden)

    G. Il’chuk

    2009-01-01

    Full Text Available For the first time using CdI2 solution CdS films on glass and ITO coated glass substrates were produced by the method of layerwise chemical surface deposition (ChSD. CdS thin films with the widths from 40 nm to 100 nm were obtained for windows in solar cells based on CdS/CdTe heterojunctions. Changes of the structural and optical properties of CdS films due to air annealing are shown.

  10. Structural, optical and electrical properties of chemically deposited copper selenide films

    Indian Academy of Sciences (India)

    R H Bari; V Ganesan; S Potadar; L A Patil

    2009-02-01

    Stoichiometric and nonstoichiometric thin films of copper selenide have been prepared by chemical bath deposition technique at temperature below 60°C on glass substrate. The effect of nonstoichiometry on the optical, electrical and structural properties of the film was studied. The bandgap energy was observed to increase with the increase in at % of copper in composition. The grain size was also observed to increase with the decrease of at % of copper in composition. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), absorption spectroscopy, and AFM. The results are discussed and interpreted.

  11. Magnetic property and recording performance of chemical deposition CoP thin films

    Institute of Scientific and Technical Information of China (English)

    2012-01-01

    The thickness of CoP thin films prepared by wet chemical deposition is of crucial importance on magnetic property and recording perform-ance. The coercivity of CoP films decreased with increasing film thickness. The coercivity was 45.37 kA m 1 at the thickness of 300 nm, and decreased to 21.65 kA m 1 at 5.7 μm. Recording performance tests indicate that, for drums with the same size, different recorded magnetic pole density have different thickness requirements. For 40 mm diameter magnetic drum, the optimal ...

  12. Size dependent optical characteristics of chemically deposited nanostructured ZnS thin films

    Indian Academy of Sciences (India)

    A U Ubale; V S Sangawar; D K Kulkarni

    2007-04-01

    ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S2- and Zn2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the wavelength range 250–750 nm show that band gap energy of ZnS increases from 3.68–4.10 eV as thickness varied from 332–76 nm. The structural estimation shows variation in grain size from 6.9–17.8 nm with thickness. The thermoemf measurement indicates that films prepared by this method are of -type.

  13. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  14. Optical and structural properties of PbI2 thin film produced via chemical dipping method

    Science.gov (United States)

    Kariper, İ. A.

    2016-06-01

    PbI2 thin films were deposited on glass substrates via chemical bath deposition. The characteristics of PbI2 thin films were examined through their structural and optical properties. X-ray diffraction spectra showed the presence of rhombohedral structure and atom planes were subject to change with the pH of the bath. Scanning electron microscope indicated uniform distribution of grains. Optical properties were examined via UV-VIS; optical spectrum of the thin films was measured at the range of 200-1100 nm wavelength. Optimum pH levels for producing thin films were found to be pH 4-5. It has been observed that transmission and optical band gap ( E g) increased with the pH of the bath, which varied between 66-95 and 2.24-2.50 %, respectively; on the other hand film thickness of PbI2 thin films was decreased with the pH of the bath. Energy-dispersive X-ray spectroscopy analysis were in accordance with theoretical value of PbI2 at pH = 4 and 5. Refractive index was negatively correlated with pH of the chemical bath; it has been calculated as 1.97, 1.40, 1.29 and 1.24 for the films produced at pH 2, 3, 4 and 5. The results of the study were compared with similar studies in the literature.

  15. Chemical Stability of Titania and Alumina Thin Films Formed by Atomic Layer Deposition.

    Science.gov (United States)

    Correa, Gabriela C; Bao, Bo; Strandwitz, Nicholas C

    2015-07-15

    Thin films formed by atomic layer deposition (ALD) are being examined for a variety of chemical protection and diffusion barrier applications, yet their stability in various fluid environments is not well characterized. The chemical stability of titania and alumina thin films in air, 18 MΩ water, 1 M KCl, 1 M HNO3, 1 M H2SO4, 1 M HCl, 1 M KOH, and mercury was studied. Films were deposited at 150 °C using trimethylaluminum-H2O and tetrakis(dimethylamido)titanium-H2O chemistries for alumina and titania, respectively. A subset of samples were heated to 450 and 900 °C in inert atmosphere. Films were examined using spectroscopic ellipsometry, atomic force microscopy, optical microscopy, scanning electron microscopy, and X-ray diffraction. Notably, alumina samples were found to be unstable in pure water, acid, and basic environments in the as-synthesized state and after 450 °C thermal treatment. In pure water, a dissolution-precipitation mechanism is hypothesized to cause surface roughening. The stability of alumina films was greatly enhanced after annealing at 900 °C in acidic and basic solutions. Titania films were found to be stable in acid after annealing at or above 450 °C. All films showed a composition-independent increase in measured thickness when immersed in mercury. These results provide stability-processing relationships that are important for controlled etching and protective barrier layers.

  16. Chemical ordering at low temperatures in FePd films

    Science.gov (United States)

    Ravelosona, D.; Chappert, C.; Bernas, H.; Halley, D.; Samson, Y.; Marty, A.

    2002-05-01

    We demonstrate that, if a high degree of short range order is present in FePd disordered films, a high value of the long range order parameter S can be obtained by using postgrowth ion irradiation at very low processing temperatures. FePd films deposited monolayer by monolayer at room temperature on MgO(001) substrates exhibit a very low degree of long range order (S˜0.1) but a high degree of short range order as demonstrated by extended x-ray absorption fine structure measurements. Irradiation with 130 keV He+ ions at low fluences (2.0×1016 ions/cm2) leads to a large increase in the long range order parameter and to a large increase in perpendicular anisotropy for irradiation at substrate temperatures lower than 200 °C. This could have a great impact on the current race toward high magnetic recording density media.

  17. Perovskite type nanopowders and thin films obtained by chemical methods

    Directory of Open Access Journals (Sweden)

    Viktor Fruth

    2010-09-01

    Full Text Available The review presents the contribution of the authors, to the preparation of two types of perovskites, namely BiFeO3 and LaCoO3, by innovative methods. The studied perovskites were obtained as powders, films and sintered bodies. Their complex structural and morphological characterization is also presented. The obtained results have underlined the important influence of the method of preparation on the properties of the synthesized perovskites.

  18. Laboratory analogues simulating Titan's atmospheric aerosols: Compared chemical compositions of grains and thin films

    Science.gov (United States)

    Carrasco, Nathalie; Jomard, François; Vigneron, Jackie; Etcheberry, Arnaud; Cernogora, Guy

    2016-09-01

    Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan's atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan's atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan's atmosphere. The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. The main parameter probed is the CH4/N2 ratio to explore various possible chemical regimes. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions could be explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes. The higher nitrogen content in the grains possibly involves a higher optical absorption than the one measured on the films, with a possible impact on Titan's radiative models.

  19. Fixed-film columnar bioreactors for the production of chemicals and fuels from biomass

    Science.gov (United States)

    Scott, C. D.; Shumate, S. E. W., II; Arcuri, E. J.

    1982-12-01

    Fixed films of an active biological agent are maintained on solid surfaces within bioreactor systems to allow high productivity without agent washout during continuous operation. This, coupled with a stagewise columnar arrangement, may allow higher overall reaction rates. Fluidized bed and fixed bed bioreactors with fixed films of microorganisms are studied for the production of chemicals and fuels from biomass derived feed materials. Ethanol production at high rates has been demonstrated with glucose as the feed material; methane and other chemicals are also produced in these advanced systems.

  20. Effect of surface treatment on hot-filament chemical vapour deposition grown diamond films

    Science.gov (United States)

    Ali, M.; Ürgen, M.; Atta, M. A.

    2012-02-01

    Diamond film growth without seeding treatment has been the subject of numerous studies. In this study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely ‘dry ultrasonic treatment’, was introduced in which full coverage of the diamond film was achieved over the substrate having no prior seeding treatment. For comparison purposes, two substrates were seeded with different sizes of diamond particles, 5 µm by hand and 30-40 µm by ultrasonic agitation, prior to deposition. The produced diamond films were examined through standard characterization tools and distinct features were observed in each film. The diamond film grown without the seeding treatment shows slightly lower growth rate (1 µm h-1) but bigger grain size up to 8 µm compared with seeded films. Here we show the growth of uniform and high-purity diamond films free from nano-sized grains, which are grown without any seeding treatment.

  1. Optical and electrical properties of chemical bath deposited cobalt sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Govindasamy, Geetha [R& D Centre, Bharathiar University, Coimbatore (India); Murugasen, Priya, E-mail: priyamurugasen15@gmail.com [Department of Physics, Saveetha Engineering, Chennai, Tamil Nadu (India); Sagadevan, Suresh [Department of Physics, AMET University, Chennai, Tamil Nadu (India)

    2017-01-15

    Cobalt sulphide (CoS) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and the crystallite size of CoS thin film. Scanning Electron Microscope (SEM) studies reveal the surface morphology of these films. The optical properties of the CoS thin films were determined using UV-Visible absorption spectrum. The optical band gap of the thin films was found to be 1.6 eV. Optical constants such as the refractive index, the extinction coefficient and the electric susceptibility were determined. The dielectric studies were carried out at different frequencies and at different temperatures for the prepared CoS thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the thin films were determined. The AC electrical conductivity measurement was also carried out for the thin films. The activation energy was determined by using DC electrical conductivity measurement. (author)

  2. Wet chemical methods for producing mixing crystalline phase ZrO2 thin film

    Science.gov (United States)

    Pakma, Osman; Özdemir, Cengiz; Kariper, İ. Afşin; Özaydın, Cihat; Güllü, Ömer

    2016-07-01

    The aim of the study is to develop a more economical and easier method for obtaining ZrO2 thin films at lower temperature, unlike the ones mentioned in the literature. For this purpose, wet chemical synthesis methods have been tested and XRD, UV-VIS and SEM analysis of ZrO2 thin films have been performed. At the end of the analysis, we identified the best method and it has been found that the features of the films produced with this method were better than the films produced by using different reagents, as well as the films reported in the literature. Especially it has been observed that the transmittance of the film produced with this method were higher and better than the films in the literature and the others. In addition, refractive index of the film produced with this method was observed to be lower. Moreover, by using the same method Al/ZrO2/p-Si structure has been obtained and it has been compared with Al/p-Si reference structure in terms of electrical parameters.

  3. Nanoparticulate platinum films on gold using dendrimer-based wet chemical method

    Indian Academy of Sciences (India)

    S Raghu; Sheela Berchmans; K L N Phani; V Yegnaraman

    2005-11-01

    There is a growing interest in devising wet chemical alternatives for physical deposition methods for applications involving thin films, e.g., catalysis. Deposition of platinum on thin gold films is often a problem leading to incomplete coverage and improper adhesion to solid surfaces. Gold substrates often need pre-activation for achieving complete coverage. We demonstrate here that dendrimers with proper functionalities and size work as well-defined nucleating agents and adhesion promoters. This feature is demonstrated using an amine-terminated dendrimer of generation 4.0. This approach allows one to obtain adherent nanoparticulate films of platinum on gold. Unlike other nucleating agents and adhesion promoting compounds, dendrimers have a well-defined ordered structure in terms of their space filling ability. The stability of the films obtained with adsorbed dendrimers is emonstrated using the electrocatalytic reactions of fuels like methanol. The films formed without dendrimers cannot sustain the electro-oxidation currents due to the instability of the films while the films formed with dendrimers can sustain currents for longer duration and for several cycles. The dendrimer-derived Pt films exhibit higher catalytic activity compared to other methods.

  4. Characterization of ZnS thin films synthesized through a non-toxic precursors chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez, C.A. [Department of Materials Engineering, Faculty of Engineering, University of Concepción, Edmundo Larenas 270, Concepción 4070409 (Chile); Sandoval-Paz, M.G. [Department of Physics, Faculty of Physics and Mathematics, University of Concepción, Concepción (Chile); Cabello, G. [Department of Basic Sciences, Faculty of Sciences, University of Bío-Bío, Campus Fernando May, Chillán (Chile); Flores, M.; Fernández, H. [Department of Physics, Faculty of Physics and Mathematics, University of Chile, Beauchef 850, Santiago (Chile); Carrasco, C., E-mail: ccarrascoc@udec.cl [Department of Materials Engineering, Faculty of Engineering, University of Concepción, Edmundo Larenas 270, Concepción 4070409 (Chile)

    2014-12-15

    Highlights: • High quality ZnS thin films have been deposited by chemical bath deposition technique from a non-toxic precursor’s solution. • Nanocrystalline ZnS thin films with large band gap energy were synthesized without using ammonia. • Evidence that the growing of the thin films is carried out by means of hydroxide mechanism was found. • The properties of these ZnS thin films are similar and in some cases better than the corresponding ones produced using toxic precursors such as ammonia. - Abstract: In solar cells, ZnS window layer deposited by chemical bath technique can reach the highest conversion efficiency; however, precursors used in the process normally are materials highly volatile, toxic and harmful to the environment and health (typically ammonia and hydrazine). In this work the characterization of ZnS thin films deposited by chemical bath in a non-toxic alkaline solution is reported. The effect of deposition technique (growth in several times) on the properties of the ZnS thin film was studied. The films exhibited a high percentage of optical transmission (greater than 80%); as the deposition time increased a decreasing in the band gap values from 3.83 eV to 3.71 eV was observed. From chemical analysis, the presence of ZnS and Zn(OH){sub 2} was identified and X-ray diffraction patterns exhibited a clear peak corresponding to ZnS hexagonal phase (1 0 3) plane, which was confirmed by electron diffraction patterns. From morphological studies, compact samples with well-defined particles, low roughness, homogeneous and pinhole-free in the surface were observed. From obtained results, it is evident that deposits of ZnS–CBD using a non-toxic solution are suitable as window layer for TFSC.

  5. Polycrystalline thin film materials and devices. Final subcontract report, 16 January 1990--15 January 1993

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.; Yokimcus, T.A. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion

    1993-08-01

    This report describes results and conclusions of the final phase (III) of a three-year research program on polycrystalline thin-film heterojunction solar cells. The research consisted of the investigation of the relationships between processing, materials properties, and device performance. This relationship was quantified by device modeling and analysis. The analysis of thin-film polycrystalline heterojunction solar cells explains how minority-carrier recombination at the metallurgical interface and at grain boundaries can be greatly reduced by the proper doping of the window and absorber layers. Additional analysis and measurements show that the present solar cells are limited by the magnitude of the diode current, which appears to be caused by recombination in the space charge region. Developing an efficient commercial-scale process for fabricating large-area polycrystalline, thin-film solar cells from a research process requires a detailed understanding of the individual steps in making the solar cell, and their relationship to device performance and reliability. The complexities involved in characterizing a process are demonstrated with results from our research program on CuInSe{sub 2}, and CdTe processes.

  6. Thin film silicon solar cells: advanced processing and characterization - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Ballif, Ch.

    2008-04-15

    This final report elaborated for the Swiss Federal Office of Energy (SFOE) takes a look at the results of a project carried out at the photovoltaics laboratory at the University of Neuchatel in Switzerland. The project aimed to demonstrate the production of high-efficiency thin-film silicon devices on flexible substrates using low cost processes. New ways of improving processing and characterisation are examined. The process and manufacturing know-how necessary to provide support for industrial partners within the framework of further projects is discussed. The authors state that the efficiency of most devices was significantly improved, both on glass substrates and on flexible plastic foils. The process reproducibility was also improved and the interactions between the different layers in the device are now said to be better understood. The report presents the results obtained and discusses substrate materials, transparent conductors, defect analyses and new characterisation tools. Finally, the laboratory infrastructure is described.

  7. Novel thin film field emission electron source laboratory directed research and development final report

    Energy Technology Data Exchange (ETDEWEB)

    Walko, R.J.; Fleming, J.G.; Hubbs, J.W.

    1997-04-01

    The objective of this project was to demonstrate proof of concept of a thin film field emission electron source based on electron tunneling between discrete metal islands on an insulating substrate. An electron source of this type should be more easily fabricated permitting the use of a wider range of materials, and be less prone to damage and erratic behavior than the patterned field emitter arrays currently under development for flat panel displays and other vacuum microelectronic applications. This report describes the results of the studies of electron and light emission from such structures, and the subsequent discovery of a source of light emission from conductive paths across thin insulating gaps of the semiconductor-insulator-semiconductor (SIS) and metal-insulator-semiconductor (MIS) structures. The substrates consisted of silicon nitride and silicon dioxide on silicon wafers, Kapton{reg_sign}, quartz, and cut slabs of silica aerogels. The conductive film samples were prepared by chemical vapor deposition (CVD) and sputtering, while the MIS and SIS samples were prepared by CVD followed by cleaving, grinding, mechanical indentation, erosion by a sputter Auger beam, electrical arcing and chemical etching. Electron emission measurements were conducted in high and ultra high vacuum systems at SNL, NM as well as at SNL, CA. Optical emission measurements were made in air under an optical microscope as well as in the above vacuum environments. Sample morphology was investigated using both scanning electron microscopy (SEM) and transmission electron microscopy (TEM).

  8. New crosslinked cast films based on poly(vinyl alcohol: Preparation and physico-chemical properties

    Directory of Open Access Journals (Sweden)

    C. Birck

    2014-12-01

    Full Text Available In this paper, we propose a green route to prepare insoluble poly(vinyl alcohol (PVOH cast films with potential application as antimicrobial packaging. First PVOH films were cast from different aqueous solutions and analyzed by Differential Scanning Calorimetry (DSC and Dynamic Mechanical Analysis (DMA to determine their physical properties under two storage conditions. In order to obtain insoluble films, PVOH was then crosslinked by citric acid (CTR as confirmed by Nuclear Magnetic Resonance (NMR analyses. The crosslinking reaction parameters (curing time, crosslinker content were studied by comparing the characteristics of PVOH/CTR films, such as free COOH content and glass transition temperature (Tg value, as well as the impact of the crosslinking reaction on mechanical properties. It was found that for 40 and 10 wt% CTR contents, 120 and 40 min of crosslinking times were necessary to bind all CTR respectively. Brittle films were obtained for 40 wt% CTR whereas 10 wt% CTR content led to ductile films. Finally, films containing hydroxypropyl-β-cyclodextrin (HPβCD, chosen as a potential vector of antimicrobial agent, were prepared. The obtained results show that the incorporation of HPβCD in the PVOH matrix does not mainly influence the physical and mechanical properties of the films.

  9. Fabrication of cuprous chloride films on copper substrate by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Ting; Ci, Ji-Wei; Tu, Wei-Chen [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Lan, Shan-Ming [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Shen, Chin-Chang; Wu, Chih-Hung [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China)

    2015-09-30

    Polycrystalline CuCl films were fabricated by chemical bath deposition (CBD) on a Cu substrate at a low solution temperature of 90 °C. Continuous CuCl films were prepared using the copper (II) chloride (CuCl{sub 2}) compound as the precursor for both the Cu{sup 2+} and Cl{sup −} sources, together with repeated HCl dip treatments. An HCl dip pretreatment of the substrate favored the nucleation of CuCl crystallites. Further, interrupting the film deposition and including an HCl dip treatment of the film growth surface facilitated the deposition of a full-coverage CuCl film. A dual beam (FIB/SEM) system with energy dispersive spectrometry facilities attached revealed a homogeneous CuCl layer with a flat-top surface and an average thickness of about 1 μm. Both the excitonic and biexcitonic emission lines were well-resolved in the 6.4 K photoluminescence spectra. In particular, the free exciton emission line was observable at room temperature, indicating the good quality of the CuCl films prepared by CBD. - Highlights: • Cuprous chloride (CuCl) was prepared on Cu substrate by chemical bath deposition. • HCl dip treatments facilitated the deposition of a full-coverage CuCl film. • A homogeneous elemental distribution was recognized for the deposited CuCl layer. • Excitonic and biexcitonic photoluminescence lines of CuCl films were well-resolved. • The free exciton emission line of CuCl films was observable at room temperature.

  10. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  11. Control of crystallite size in diamond film chemical vapor deposition

    Science.gov (United States)

    Moran, Mark B.; Johnson, Linda F.; Klemm, Karl A.

    1992-12-01

    In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.

  12. The influence of methanol addition during the film growth of SnO 2 by atmospheric pressure chemical vapor deposition

    NARCIS (Netherlands)

    Volintiru, I.; Graaf, A. de; Deelen, J. van; Poodt, P.W.G.

    2011-01-01

    Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor from a water/tin tetrachloride mixture. By adding methanol during the deposition process the film electrical properties change significantly: ten times more conductive SnO 2 films are o

  13. EPA Releases Final Risk Assessment for Chemical used for Paint and Coating Removal

    Science.gov (United States)

    WASHINGTON - Today, the U.S. EPA released the final risk assessment for N-Methylpyrrolidone (NMP), a chemical commonly used to remove paint and other coatings. The assessment identified risks to pregnant women and women of childbearing age, who have

  14. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  15. Antimony sulphide thin film as an absorber in chemically deposited solar cells

    Science.gov (United States)

    Messina, Sarah; Nair, M. T. S.; Nair, P. K.

    2008-05-01

    Antimony sulfide thin films (thickness, 500 nm) were deposited on chemically deposited CdS thin films (100 nm) obtained on 3 mm glass substrates coated with a transparent conductive coating of SnO2:F (TEC-15 with 15 Ω sheet resistance). Two different chemical formulations were used for depositing antimony sulfide films. These contained (i) antimony trichloride dissolved in acetone and sodium thiosulfate, and (ii) potassium antimony tartrate, triethanolamine, ammonia, thioacetamide and small concentrations of silicotungstic acid. The films were heated at 250 °C in nitrogen. The cell structure was completed by depositing a 200 nm p-type PbS thin film. Graphite paint applied on the PbS thin film and a subsequent layer of silver paint served as the p-side contact. The cell structure: SnO2:F/CdS/Sb2S3 (i or ii)/PbS showed open circuit voltage (Voc) of 640 mV and short circuit current density (Jsc) above 1 mA cm-2 under 1 kW m-2 tungsten-halogen radiation. Four cells, each of 1.7 cm2 area, were series-connected to give Voc of 1.6 V and a short circuit current of 4.1 mA under sunlight (1060 W m-2).

  16. Plasma Enhanced Chemical Vapor Deposition Nanocrystalline Tungsten Carbide Thin Film and Its Electro-catalytic Activity

    Institute of Scientific and Technical Information of China (English)

    Huajun ZHENG; Chunan MA; Jianguo HUANG; Guohua LI

    2005-01-01

    Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results show that the film prepared at CH4/WF6concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20~35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V (vs SCE).

  17. Conducting Graphite/Cellulose Composite Film as a Candidate for Chemical Vapor-Sensing Material

    Directory of Open Access Journals (Sweden)

    Kaihua Liu

    2014-07-01

    Full Text Available A type of conductive graphite/cellulose composite film used for chemical vapor-sensing material was prepared at room temperature in the ionic liquid 1-butyl-3-methylimidazolium chloride ([BMIm]Cl. Graphite was pretreated with both oxidation and reduction processes. Due to the use of N,N-carbonyldiimidazole (CDI, as a covalent cross-linking agent in [BMIm]Cl, there were limited chemical bonds between the graphite and cellulose. The composite film was analyzed using Fourier transform infrared spectroscopy (FT-IR, Raman spectroscopy, and X-ray photoelectron spectroscopy (XRD. When these conducting films were exposed to certain organic vapors, their electrical resistances quickly changed, showing gas sensitivity. The percolation threshold of the conducting film was about 5 wt%. The gas-sensing behavior of these films in solvent were the opposite of those gas-sensing materials based on a non-polar polymer matrix. A typical negative vapor coefficient (NVC was observed when the film was placed in polar organic solvents such as methanol, ethanol, and acetone.

  18. Thin alumina and silica films by chemical vapor deposition (CVD)

    NARCIS (Netherlands)

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ce

  19. Simultaneous Chemical and Optical Patterning of Polyacrylonitrile Film by Vapor-Based Reaction.

    Science.gov (United States)

    Shin, Jae-Won; Lee, Choonghyeon; Cha, Sang-Ho; Jang, Jyongsik; Lee, Kyung Jin

    2015-06-01

    The surface of polyacrylonitrile (PAN) film is treated with ethyleneamines (EDA) in a simple chemical vapor phase reaction. Successful introduction of amine functional groups on the cyano group of PAN backbone is verified by FT-IR and NMR measurements. Further UV-vis and photoluminescence analyses show a red shift of the emission peak after repeated EDA treatment, which might be attributed to the formation of imine conjugation from newly formed carbon-nitrogen bonds on the PAN backbone. Further confocal laser scanning microscopy reveals that selective patterning of EDA on PAN films is possible via local polydimethylsiloxane masking. The results indicate that both chemical and optical patterning on PAN film can be realized via a single reaction and show the potential of this novel methodology in selective patterning.

  20. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    Science.gov (United States)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  1. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method.

    Science.gov (United States)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-07-08

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]n(RS)[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures.

  2. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  3. Bath Parameter Dependence of Chemically-Deposited Copper Selenide Thin Film

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films on to glass substrate. Different thin films (0.2-0.6 μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that complexing the Cu2+ ions with TEA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu2-xSe.

  4. Growth inhibition to enhance conformal coverage in thin film chemical vapor deposition.

    Science.gov (United States)

    Kumar, Navneet; Yanguas-Gil, Angel; Daly, Scott R; Girolami, Gregory S; Abelson, John R

    2008-12-31

    We introduce the use of a growth inhibitor to enhance thin film conformality in low temperature chemical vapor deposition. Films of TiB(2) grown from the single source precursor Ti(BH(4))(3)(dme) are much more highly conformal when grown in the presence of one of the film growth byproducts, 1,2-dimethoxyethane (dme). This effect can be explained in terms of two alternative inhibitory mechanisms: one involving blocking of surface reactive sites, which is equivalent to reducing the rate of the forward reaction leading to film growth, the other analogous to Le Chatelier's principle, in which the addition of a reaction product increases the rate of the back reaction. The reduction in growth rate corresponds to a reduction in the sticking probability of the precursor, which enhances conformality by enabling the precursor to diffuse deeper into a recessed feature before it reacts.

  5. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  6. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  7. Chemically robust carbon nanotube – PTFE superhydrophobic thin films with enhanced ability of wear resistance

    Directory of Open Access Journals (Sweden)

    Kewei Wang

    2017-06-01

    Full Text Available A chemically robust superhydrophobic nanocomposite thin film with enhanced wear resistance is prepared from a composite comprising polytetrafluoroethylene (PTFE and carbon nanotubes. The superhydrophobic thin films with hierarchical structure are fabricated by spraying an environmentally friendly aqueous dispersion containing carbon nanotubes and PTFE resin on silicon wafer. Thin films with a contact angle of 154.1°±2° and a sliding angle less than 2° remain superhydrophobic after abrading over 500 times under a pressure of 50 g/cm2. The thin film is also extremely stable even under much stress conditions. To further the understanding of the enhancement of wear resistance, we investigated the formation of microsized structure and their effects. The growth of microbumps is caused by attracting solution droplet to the hydrophilic islands on hydrophobic surface.

  8. Fabrication of FeSe superconducting films with chemical transport deposition process

    Science.gov (United States)

    Feng, J. Q.; Zhang, S. N.; Liu, J. X.; Hao, Q. B.; Li, C. S.; Zhang, P. X.

    2017-07-01

    FeSe Superconducting films were fabricated with a chemical transport deposition process. During the fabrication process, Fe foils were adopted as substrates and Se powders were put at one end of the tube furnace. During the heating process, Se powders were vaporized, and vaporized atoms were carried by Ar flow and deposited on the Fe substrates. With a heat treatment process under proper temperature, superconducting tetragonal β-FeSe phase can be obtained. The effects of key parameters, including the sintering temperatures and the distances between Fe substrates and Se source on the phase composition and morphology of the obtained films were systematically investigated. The superconducting transition temperature of 7.8 K was obtained on the optimized film. By further optimization of the heat treatment process, it is promising to fabricate FeSe films with higher superconducting phase content and better superconducting properties.

  9. Characteristics and Mechanisms in Ion-Conducting Polymer Films as Chemical Sensors

    Energy Technology Data Exchange (ETDEWEB)

    HUGHES,ROBERT C.; YELTON,WILLIAM G.; PFEIFER,KENT B.; PATEL,SANJAY V.

    2000-07-12

    Solid Polymer Electrolytes (SPE) are widely used in batteries and fuel cells because of the high ionic conductivity that can be achieved at room temperature. The ions are usually Li or protons, although other ions can be shown to conduct in these polymer films. There has been very little published work on SPE films used as chemical sensors. The authors have found that thin films of polymers like polyethylene oxide (PEO) are very sensitive to low concentrations of volatile organic compounds (VOCs) such as common solvents. Evidence of a new sensing mechanism involving the percolation of ions through narrow channels of amorphous polymer is presented. They present impedance spectroscopy of PEO films in the frequency range 0.0001 Hz to 1 MHz for different concentrations of VOCs and relative humidity. They find that the measurement frequency is important for distinguishing ionic conductivity from the double layer capacitance and the parasitic capacitance.

  10. Growth Process Conditions of Tungsten Oxide Thin Films Using Hot-Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Houweling, Z.S.; Geus, J.W.; de Jong, M.; Harks, P.P.R.M.L.; van der Werf, C.H.M.; Schropp, R.E.I.

    2011-01-01

    We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was

  11. Divacancies and the hydrogenation of Mg-Ti films with short range chemical order

    NARCIS (Netherlands)

    Leegwater, H.; Schut, H.; Egger, W.; Baldi, A.; Dam, B.; Eijt, S.W.H.

    2010-01-01

    We obtained evidence for the partial chemical segregation of as-deposited and hydrogenated Mg1−yTiy films (0 ≤ y ≤ 0.30) into nanoscale Ti and Mg domains using positron Doppler-broadening. We exclusively monitor the hydrogenation of Mg domains, owing to the large difference in positron affinity for

  12. Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films

    Directory of Open Access Journals (Sweden)

    Ho Soonmin

    2014-09-01

    Full Text Available Ni3Pb2S2 thin films were prepared by chemical bath deposition method. Here, the objective of this research was to investigate the influence of complexing agent on the properties of films.These films were characterized using atomic force microscopy, UV-Visible spectro photometer and X-ray diffraction. It was found that, as the concentration of tartaric acid increased, film thickness increased, but, the band gap reduced. For the films prepared using 0.1M of tartaric acid, the films were uniform and completely covered the substrates.

  13. Dealloyed Ruthenium Film Catalysts for Hydrogen Generation from Chemical Hydrides

    Directory of Open Access Journals (Sweden)

    Ramis B. Serin

    2017-07-01

    Full Text Available Thin-film ruthenium (Ru and copper (Cu binary alloys have been prepared on a Teflon™ backing layer by cosputtering of the precious and nonprecious metals, respectively. Alloys were then selectively dealloyed by sulfuric acid as an etchant, and their hydrogen generation catalysts performances were evaluated. Sputtering time and power of Cu atoms have been varied in order to tailor the hydrogen generation performances. Similarly, dealloying time and the sulfuric acid concentration have also been altered to tune the morphologies of the resulted films. A maximum hydrogen generation rate of 35 mL min−1 was achieved when Cu sputtering power and time were 200 W and 60 min and while acid concentration and dealloying time were 18 M and 90 min, respectively. It has also been demonstrated that the Ru content in the alloy after dealloying gradually increased with the increasing the sputtering power of Cu. After 90 min dealloying, the Ru to Cu ratio increased to about 190 times that of bare alloy. This is the key issue for observing higher catalytic activity. Interestingly, we have also presented template-free nanoforest-like structure formation within the context of one-step alloying and dealloying used in this study. Last but not least, the long-time hydrogen generation performances of the catalysts system have also been evaluated along 3600 min. During the first 600 min, the catalytic activity was quite stable, while about 24% of the catalytic activity decayed after 3000 min, which still makes these systems available for the development of robust catalyst systems in the area of hydrogen generation.

  14. Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen

    Institute of Scientific and Technical Information of China (English)

    马志斌; 汪建华; 王传新; 满卫东

    2003-01-01

    Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film.

  15. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  16. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Peng-Fei; DING Shi-Jin; ZHANG Wei; ZHANG Jian-Yun; WANGJi-Tao; WEI William Lee

    2000-01-01

    Fluorine doped silicon dioxide (SiOF) thin films have been prepared by plasma enhanced chemical vapor depo sition. The Fourier transform infrared spectrometry (FTIR) spectra of SiOF films are deliberated to reveal the structure change of SiO2 and the mechanism of dielectric constant reduction after doping fluorine. When F is doped in SiO2 films, the Si-O stretching absorption peak will have a blue-shift due to increase of the partial charge of the O atom. The FTIR spectra indicate that some Si-OH components in the thin film can be removed after doping fluorine. These changes reduce the ionic and orientational polarization, and result in the reduction in dielectric constant of the film. According to Gaussian fitting, it is found that the Si-F2 bonds will appear in the SiOF film with increase of the fluorine content. The Si-F2 structures are liable to react with water, and cause the same increase of absorbed moisture in the film.

  17. Effect of starch type on the physico-chemical properties of edible films.

    Science.gov (United States)

    Basiak, Ewelina; Lenart, Andrzej; Debeaufort, Frédéric

    2017-05-01

    Food preservation is mostly related to packaging in oil-based plastics, inducing environmental problems, but this drawback could be limited by using edible/biodegradable films and coatings. Physical and chemical properties were assessed and reflect the role of the starch type (wheat, corn or potato) and thus that of the amylose/amylopectin ratio, which influences thickness, colour, moisture, wettability, thermal, surface and mechanical properties. Higher amylose content in films induces higher moisture sensitivity, and thus affects the mechanical and barrier properties. Films made from potato starch constitute a greater barrier for oxygen and water vapour though they have weaker mechanical properties than wheat and corn starch films. Starch species with higher amylose content have lower wettability properties, and better mechanical resistance, which strongly depends on the water content due to the hydrophilic nature of starch films, so they could be used for products with higher water activity, such as cheese, fruits and vegetables. It especially concerns wheat starch systems, and the contact angle indicates less hydrophilic surfaces (above 90°) than those of corn and potato starch films (below 90°). The starch origin influences optical properties and thickness: with more amylose, films are opalescent and thicker; with less, they are transparent and thinner.

  18. Stability increase of fuel clad with zirconium oxynitride thin film by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jee, Seung Hyun [Department of Materials Science and Engineering, Yonsei University, 134 Sinchon Dong, Seoul 120-749 (Korea, Republic of); Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 275 Wilmore Labs, AL 36849-5341 (United States); Kim, Jun Hwan; Baek, Jong Hyuk [Recycled Fuel Development Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon, 305-600 (Korea, Republic of); Kim, Dong-Joo [Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 275 Wilmore Labs, AL 36849-5341 (United States); Kang, Seong Sik [Regulatory Research Division, Korea Institute of Nuclear Safety, 19, Guseong-Dong, Yuseong-Gu, Daejeon, 305-338 (Korea, Republic of); Yoon, Young Soo, E-mail: yoonys@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 134 Sinchon Dong, Seoul 120-749 (Korea, Republic of)

    2012-06-01

    A zirconium oxynitride (ZON) thin film was deposited onto HT9 steel as a cladding material by a metalorganic chemical vapor deposition (MOCVD) in order to prevent a fuel-clad chemical interaction (FCCI) between a U-10 wt% Zr metal fuel and a clad material. X-ray diffraction spectrums indicated that the mixture of structures of zirconium nitride, oxide and carbide in the MOCVD grown ZON thin films. Also, typical equiaxial grain structures were found in plane and cross sectional images of the as-deposited ZON thin films with a thickness range of 250-500 nm. A depth profile using auger electron microscopy revealed that carbon and oxygen atoms were decreased in the ZON thin film deposited with hydrogen gas flow. Diffusion couple tests at 800 Degree-Sign C for 25 hours showed that the as-deposited ZON thin films had low carbon and oxygen content, confirmed by the Energy Dispersive X-ray Spectroscopy, which showed a barrier behavior for FCCI between the metal fuel and the clad. This result suggested that ZON thin film cladding by MOCVD, even with the thickness below the micro-meter level, has a high possibility as an effective FCCI barrier. - Highlights: Black-Right-Pointing-Pointer Zirconium oxynitride (ZON) deposited by metal organic chemical vapor deposition. Black-Right-Pointing-Pointer Prevention of fuel cladding chemical interaction (FCCI) investigated. Black-Right-Pointing-Pointer Interfusion reduced by between metal fuel (U-10 wt% Zr) and a HT9 cladding material. Black-Right-Pointing-Pointer Hydrogenation of the ZON during growth improved the FCCI barrier performance.

  19. Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Houweling, Z. Silvester, E-mail: Z.S.Houweling@uu.nl [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CB Utrecht (Netherlands); Geus, John W. [Electron Microscopy, Utrecht University, Padualaan 8, 3584 CH Utrecht (Netherlands); Jong, Michiel de; Harks, Peter-Paul R.M.L.; Werf, Karine H.M. van der; Schropp, Ruud E.I. [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CB Utrecht (Netherlands)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Process parameters to control hot-wire CVD of WO{sub 3-x} are categorized. Black-Right-Pointing-Pointer Growth time, oxygen partial pressure, filament and substrate temperature are varied. Black-Right-Pointing-Pointer Chemical and crystal structure, optical bandgap and morphology are determined. Black-Right-Pointing-Pointer Oxygen partial pressure determines the deposition rate up to as high as 36 {mu}m min{sup -1}. Black-Right-Pointing-Pointer Nanostructures, viz. wires, crystallites and closed crystallite films, are controllably deposited. - Abstract: We report the growth conditions of nanostructured tungsten oxide (WO{sub 3-x}) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was varied from 6.0 Multiplication-Sign 10{sup -6} to 1.0 mbar and the current through the filaments was varied from 4.0 to 9.0 A, which constitutes a filament temperature of 1390-2340 Degree-Sign C in vacuum. It is observed that the deposition rate of the films is predominantly determined by the oxygen partial pressure; it changes from about 1 to about 36,000 nm min{sup -1} in the investigated range. Regardless of the oxygen partial pressure and filament temperature used, thin films with a nanogranular morphology are obtained, provided that the depositions last for 30 min or shorter. The films consist either of amorphous or partially crystallized WO{sub 3-x} with high averaged transparencies of over 70% and an indirect optical band gap of 3.3 {+-} 0.1 eV. A prolonged deposition time entails an extended exposure of the films to thermal radiation from the filaments, which causes crystallization to monoclinic WO{sub 3} with diffraction maxima due to the (0 0 2), (2 0 0) and (0 2 0) crystallographic planes, furthermore the nanograins sinter and the films exhibit a cone

  20. Optical and structural properties of chemically deposited CdS thin films on polyethylene naphthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Concepcion, Casilla 160-C, Concepcion (Chile); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)

    2011-11-30

    CdS thin films were deposited on polyethylene naphthalate substrates by means of the chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. Three sets of CdS films were grown in precursor solutions with different contents of Cd and thiourea maintaining constant the concentration ratios [Cd]/[thiourea] and [Cd]/[sodium citrate] at 0.2 and 0.1 M/M, respectively. The concentrations of cadmium in the reaction solutions were 0.01, 7.5 Multiplication-Sign 10{sup -3} and 6.8 Multiplication-Sign 10{sup -3} M, respectively. The three sets of CdS films were homogeneous, hard, specularly reflecting, yellowish and adhered very well to the plastic substrates, quite similar to those deposited on glass substrates. The structural and optical properties of the CdS films were determined from X-ray diffraction, optical transmission and reflection spectroscopy and atomic force microscopy measurements. We found that the properties of the films depend on both the amount of Cd in the growth solutions and on the deposition time. The increasing of Cd concentration in the reaction solution yield to thicker CdS films with smaller grain size, shorter lattice constant, and higher energy band gap. The energy band gap of the CdS films varied in the range 2.42-2.54 eV depending on the precursor solution. The properties of the films were analyzed in terms of the growth mechanisms during the chemical deposition of CdS layers.

  1. Thin alumina and silica films by chemical vapor deposition (CVD)

    OpenAIRE

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ceramic coatings. The influence of several process steps on the deposition rate and surface morphology is discussed. The deposition of SiO2 at atmospheric pressure is kinetically limited below 833 K ...

  2. Tailoring exchange bias through chemical order in epitaxial FePt3 films

    Science.gov (United States)

    Saerbeck, T.; Zhu, H.; Lott, D.; Lee, H.; LeClair, P. R.; Mankey, G. J.; Stampfl, A. P. J.; Klose, F.

    2013-07-01

    Intentional introduction of chemical disorder into mono-stoichiometric epitaxial FePt3 films allows to create a ferro-/antiferromagnetic two-phase system, which shows a pronounced and controllable exchange bias effect. In contrast to conventional exchange bias systems, granular magnetic interfaces are created within the same crystallographic structure by local variation of chemical order. The amount of the exchange bias can be controlled by the relative amount and size of ferromagnetic and antiferromagnetic volume fractions and the interface between them. The tailoring of the magnetic composition alone, without affecting the chemical and structural compositions, opens the way to study granular magnetic exchange bias concepts separated from structural artifacts.

  3. Effects of chemical etching and functionalization times on the properties of Cu/polyimide films

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Kisoo; Hwang, Soomin; Lee, Changmin; Kim, Won; Lee, Seungmuk; Park, Geunchul; Jung, Seungboo; Joo, Jinho [Sungkyunkwan University, Suwon (Korea, Republic of); Lim, Junhyung [Stanford University, Stanford, CA (United States)

    2010-12-15

    We fabricated flexible Cu/Polyimide (PI) films by electroless- and electro-Cu plating on surface modified PI via chemical etching and functionalization, and investigated the effects of the modification time on the contact angle, surface energy and morphology, Pd catalyst amount on PI, and resultant peel strength between Cu/PI layers. Chemical etching and successive functionalization were performed on PI surfaces for 0 - 10 min, followed by electroless- and electro-Cu plating. Chemical etching effectively modified the PI surface from a hydrophobic to a hydrophilic state. In addition, chemical functionalization significantly increased the amount of Pd absorption on PI, which consequently enhanced the peel strength between Cu/PI. The peel strength of the resulting Cu/PI film processed by both chemical etching and functionalization for 5 min increased to 5.08 N/cm, which was 4.2 and 2.8 times higher than films processed with functionalization and etching alone, respectively. The highest strength that was achieved was a result of the combined effects of the increased work of adhesion and the increased Pd amount for both treatments; however, the amount of Pd was likely to be the more critical factor for the high level of adhesion between Cu/PI, rather than the work of adhesion.

  4. Effect of the initial structure on the electrical property of crystalline silicon films deposited on glass by hot-wire chemical vapor deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Lee, Sang-Hoon; Bae, Sung-Hwan; Park, Hyung-Ki; Jung, Jae-Soo; Hwang, Nong-Moon

    2012-07-01

    Crystalline silicon films on an inexpensive glass substrate are currently prepared by depositing an amorphous silicon film and then crystallizing it by excimer laser annealing, rapid thermal annealing, or metal-induced crystallization because crystalline silicon films cannot be directly deposited on glass at a low temperature. It was recently shown that by adding HCI gas in the hot-wire chemical vapor deposition (HWCVD) process, the crystalline silicon film can be directly deposited on a glass substrate without additional annealing. The electrical properties of silicon films prepared using a gas mixture of SiH4 and HCl in the HWCVD process could be further improved by controlling the initial structure, which was achieved by adjusting the delay time in deposition. The size of the silicon particles in the initial structure increased with increasing delay time, which increased the mobility and decreased the resistivity of the deposited films. The 0 and 5 min delay times produced the silicon particle sizes of approximately 10 and approximately 28 nm, respectively, in the initial microstructure, which produced the final films, after deposition for 300 sec, of resistivities of 0.32 and 0.13 Omega-cm, mobilities of 1.06 and 1.48 cm2 V(-1) S(-1), and relative densities of 0.87 and 0.92, respectively.

  5. Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

    Energy Technology Data Exchange (ETDEWEB)

    Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Reguig, B.A.; Khelil, A. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Benchouk, K. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France)], E-mail: Jean-Christian.Bernede@univ-nantes.fr

    2008-07-15

    NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl{sub 2}.6H{sub 2}O), nickel nitrate hexahydrate (Ni(NO{sub 3}){sub 2}.6H{sub 2}O), nickel hydroxide hexahydrate (Ni(OH){sub 2}.6H{sub 2}O), nickel sulfate tetrahydrate (NiSO{sub 4}.4H{sub 2}O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 deg. C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl{sub 2} and Ni(NO{sub 3}){sub 2} precursors. These films have been post-annealed at 425 deg. C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10{sup -2} Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

  6. Chemical Mechanical Polishing of Ruthenium, Cobalt, and Black Diamond Films

    Science.gov (United States)

    Peethala, Brown Cornelius

    Ta/TaN bilayer serves as the diffusion barrier as well as the adhesion promoter between Cu and the dielectric in 32 nm technology devices. A key concern of future technology devices (sustain the diffusion barrier performance without forming voids and meeting the requirements of low resistivity. These are very challenging requirements for the Ta/TaN bilayer at a thickness of 50 nm/min) Ru removal rates (RRs) are required and as a stop layer in magnetic recording head fabrication where low (Diamond (BD) is a SiCOH type material with a dielectric constant of ˜2.9 and here, polishing of BD was investigated in order to understand the polishing behavior of SiCOH-based materials using the barrier slurries. The slurries that were developed for polishing Co and Ru in this work and Ta/TaN (earlier) were investigated for polishing the Black Diamond (BD) films. Here, it was found that ionic salts play a major role in enhancing the BD RRs to ˜65 nm/min compared to no removal rates in the absence of additives. A removal mechanism in the presence of ionic salts is proposed.

  7. Chemical synthesis of Fe{sub 2}O{sub 3} thin films for supercapacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Kulal, P.M.; Dubal, D.P.; Lokhande, C.D. [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Fulari, V.J., E-mail: vijayfulari@gmail.com [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2011-02-03

    Research highlights: > Simple chemical synthesis of Fe{sub 2}O{sub 3}. > Formation of amorphous and hydrous Fe{sub 2}O{sub 3}. > Potential candidate for supercapacitors. - Abstract: Fe{sub 2}O{sub 3} thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, scanning electron microscopy (SEM), wettability test and optical absorption studies. The XRD pattern showed that the Fe{sub 2}O{sub 3} films exhibit amorphous in nature. Formation of iron oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.2 eV. Fe{sub 2}O{sub 3} film surface showed superhydrophilic nature with water contact angle less than 10{sup o}. The supercapacitive properties of Fe{sub 2}O{sub 3} thin film investigated in 1 M NaOH electrolyte showed supercapacitance of 178 F g{sup -1} at scan rate 5 mV/s.

  8. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista-UNESP, Avenida Tres de Marco, 511, Alto da Boa Vista, 18087-180, Soracaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Rouxinol, Francisco P.M.; Gelamo, Rogerio V. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Trasferetti, B. Claudio [Present address: Superintendencia Regional da Policia Federal em Sao Paulo, Setor Tecnico-Cientifico, Rua Hugo d' Antola 95/10o Andar, Lapa de Baixo, 05038-090 Sao Paulo, SP (Brazil); Davanzo, C.U. [Instituto de Quimica, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Bica de Moraes, Mario A. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil)

    2008-01-15

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V{sub S}) and of the proportion of TEOS in the mixture (X{sub T}) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V{sub S} and X{sub T} are presented.

  9. Percolation via Combined Electrostatic and Chemical Doping in Complex Oxide Films

    Science.gov (United States)

    Orth, Peter P.; Fernandes, Rafael M.; Walter, Jeff; Leighton, C.; Shklovskii, B. I.

    2017-03-01

    Stimulated by experimental advances in electrolyte gating methods, we investigate theoretically percolation in thin films of inhomogeneous complex oxides, such as La1 -xSrxCoO3 (LSCO), induced by a combination of bulk chemical and surface electrostatic doping. Using numerical and analytical methods, we identify two mechanisms that describe how bulk dopants reduce the amount of electrostatic surface charge required to reach percolation: (i) bulk-assisted surface percolation and (ii) surface-assisted bulk percolation. We show that the critical surface charge strongly depends on the film thickness when the film is close to the chemical percolation threshold. In particular, thin films can be driven across the percolation transition by modest surface charge densities. If percolation is associated with the onset of ferromagnetism, as in LSCO, we further demonstrate that the presence of critical magnetic clusters extending from the film surface into the bulk results in considerable enhancement of the saturation magnetization, with pronounced experimental consequences. These results should significantly guide experimental work seeking to verify gate-induced percolation transitions in such materials.

  10. "Final all possible steps"approach for accelerating stochastic simulation of coupled chemical reactions

    Institute of Scientific and Technical Information of China (English)

    ZHOU Wen; PENG Xin-jun; LIU Xiang; YAN Zheng-lou; WANG Yi-fei

    2008-01-01

    In this paper,we develop a modified accelerated stochastic simulation method for chemically reacting systems,called the "final all possible steps"(FAPS)method,which obtains the reliable statistics of all species in any time during the time course with fewer simulation times.Moreover,the FAPS method can be incorporated into the leap methods,which makes the simulation of larger systems more efficient.Numerical results indicate that the proposed methods can be applied to a wide range of chemically reacting systems with a high-precision level and obtain a significant improvement on efficiency over the existing methods.

  11. Modified chemical synthesis of porous α-Sm{sub 2}S{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumbhar, V.S.; Jagadale, A.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, (M.S.) 416004 (India); Gaikwad, N.S. [Rayat Shikshan Sanstha, Satara, (M.S.) 415 001 (India); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, (M.S.) 416004 (India)

    2014-08-15

    Highlights: • A novel chemical route to prepare α-Sm{sub 2}S{sub 3} thin films. • A porous honeycomb like morphology of the α-Sm{sub 2}S{sub 3} thin film. • An application of α-Sm{sub 2}S{sub 3} thin film toward its supercapacitive behaviour. - Abstract: The paper reports synthesis of porous α-Sm{sub 2}S{sub 3} thin films using modified chemical synthesis, also known as successive ionic layer adsorption and reaction (SILAR) method. The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), wettability and ultraviolet–visible spectroscopy (UV–vis) techniques are used for the study of structural, elemental, morphological and optical properties of α-Sm{sub 2}S{sub 3} films. An orthorhombic crystal structure of α-Sm{sub 2}S{sub 3} is resulted from XRD study. The SEM and AFM observations showed highly porous α-Sm{sub 2}S{sub 3} film surface. An optical band gap of 2.50 eV is estimated from optical absorption spectrum. The porous α-Sm{sub 2}S{sub 3} thin film tuned for supercapacitive behaviour using cyclic voltammetry and galvanostatic charge discharge showed a specific capacitance and energy density of 294 Fg{sup –1} and 48.9 kW kg{sup –1}, respectively in 1 M LiClO{sub 4}–propylene carbonate electrolyte.

  12. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  13. Plasma enhanced chemical vapor deposition of iron doped thin dioxide films, their structure and photowetting effect

    Energy Technology Data Exchange (ETDEWEB)

    Sobczyk-Guzenda, A., E-mail: anna.sobczyk-guzenda@p.lodz.pl [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Owczarek, S.; Szymanowski, H. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Wypych-Puszkarz, A. [Department of Molecular Physics, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland); Volesky, L. [Technical University of Liberec, Institute for Nanomaterials, Advanced Technologies and Innovation, Studentska 1402/2, 461 17 Liberec 1 (Czech Republic); Gazicki-Lipman, M. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland)

    2015-08-31

    Radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique was applied for the purpose of deposition of iron doped titanium dioxide coatings from a gaseous mixture of oxygen with titanium (IV) chloride and iron (0) pentacarbonyl. Glass slides and silicon wafers were used as substrates. The coatings morphology was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental and chemical composition was studied with the help of X-ray energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy, respectively, while their phase composition was analyzed with the Raman spectroscopy. For the determination of the film optical properties, ultraviolet (UV–Vis) spectroscopy techniques were used. Iron content in the range of 0.07 to 11.5 at.% was found in the coatings. FTIR studies showed that iron was built-in in the structure of TiO{sub 2} matrix. Surface roughness, assessed with the SEM and AFM techniques, increases with an increasing content of this element. Trace amounts of iron resulted in a lowering of an absorption threshold of the films and their optical gap, but the tendency was reversed for high concentrations of that element. The effect of iron doping on UV photowettability of the films was also studied and, for coatings containing up to 5% of iron, it was stronger than that exhibited by pure TiO{sub 2}. - Highlights: • Iron doped TiO{sub 2} films were deposited with the PECVD method. • Differences of surface morphology of the films with different iron content were shown. • Depending on the iron content, the film structure is either amorphous or crystalline. • A parabolic character of the optical gap dependence on the concentration of iron was observed. • Up to a concentration of 5% of iron, doped TiO{sub 2} films exhibit a super-hydrophilic effect.

  14. Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

    Science.gov (United States)

    Jeong, Yesul; Pearson, Christopher; Lee, Yong Uk; Winchester, Lee; Hwang, Jaeeun; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C.

    2014-11-01

    We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140°C. The saturation mobility of the TFTs was 2 cm2/Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150°C. The devices also had an on/off ratio of 104 and a threshold voltage of -3.5 V. These values were found to depend reversibly on measurement conditions.

  15. Investigation of chemical bath deposition of CdO thin films using three different complexing agents

    Energy Technology Data Exchange (ETDEWEB)

    Khallaf, Hani [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Chen, Chia-Ta; Chang, Liann-Be [Graduate Institute of Electro-Optical Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan (China); Green Technology Research Center, Chang Gung University, Kweishan, Taoyuan 333, Taiwan (China); Lupan, Oleg [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Boulevard, MD-2004 Chisinau, Republic of Moldova (Moldova, Republic of); Dutta, Aniruddha; Heinrich, Helge [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States); Shenouda, A. [Central Metallurgical R and D Institute (CMRDI), Tebbin, P.O. Box 87, Helwan (Egypt); Chow, Lee, E-mail: Lee.Chow@ucf.edu [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States)

    2011-09-01

    Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO{sub 4} is used as Cd precursor, while H{sub 2}O{sub 2} is used as an oxidation agent. As-grown films are mainly cubic CdO{sub 2}, with some Cd(OH){sub 2} as well as CdO phases being detected. Annealing at 400 deg. C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 {+-} 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 x 10{sup 20} cm{sup -3} and a resistivity as low as 1.04 x 10{sup -2} {Omega}-cm are obtained.

  16. Effects of deposition time in chemically deposited ZnS films in acidic solution

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

    2015-08-31

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

  17. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ulutas, Cemal, E-mail: cemalulutas@hakkari.edu.tr [Faculty of Education, Hakkari Universty, 30000, Hakkari (Turkey); Gumus, Cebrail [Faculty of Science and Letters, Cukurova University, 01330, Adana (Turkey)

    2016-03-25

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E{sub g}) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn{sub 3}O{sub 4} phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  18. Epitaxial film growth of chromium dioxide by low pressure chemical vapor deposition using chromium carbonyl

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jinwen [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States); Pathak, Manjit [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Department of Physics and Astronomy, University of Alabama, Tuscaloosa, AL 35487 (United States); Zhong Xing [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Department of Electrical and Computer Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States); LeClair, Patrick [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Department of Physics and Astronomy, University of Alabama, Tuscaloosa, AL 35487 (United States); Klein, Tonya M. [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States); Gupta, Arunava, E-mail: agupta@mint.ua.ed [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States)

    2010-09-30

    Epitaxial chromium dioxide (CrO{sub 2}) thin films have been deposited by low pressure chemical vapor deposition (LPCVD) on (100) TiO{sub 2} substrates using the precursor chromium hexacarbonyl (Cr(CO){sub 6}) within a narrow temperature window of 380-400 {sup o}C. Normal {theta}-2{theta} Bragg x-ray diffraction results show that the predominant phase is CrO{sub 2} with only a small amount of Cr{sub 2}O{sub 3} present, mostly at the film surface. The LPCVD films have a reasonably smooth surface morphology with a root mean square roughness of 4 nm on a scale of 5 {mu}m. Raman spectroscopy confirms the existence of rutile CrO{sub 2} in the deposited films, while transmission electron microscopy confirms the single-crystalline nature of the films. The LPCVD films showing a dominant CrO{sub 2} phase exhibit clear uniaxial magnetic anisotropy with the easy axis oriented along the c direction.

  19. The Tribological Behaviors of Three Films Coated on Biomedical Titanium Alloy by Chemical Vapor Deposition

    Science.gov (United States)

    Wang, Song; Liao, Zhenhua; Liu, Yuhong; Liu, Weiqiang

    2015-11-01

    Three thin films (DLC, a-C, and TiN) were performed on Ti6Al4V by chemical vapor deposition. Carbon ion implantation was pretreated for DLC and a-C films while Ti transition layer was pretreated for TiN film to strengthen the bonding strength. X-ray diffraction, Raman measurement, nano-hardness and nano-scratch tester, and cross-section etching by FIB method were used to analyze film characteristics. Tribological behaviors of these coatings were studied by articulation with both ZrO2 and UHMWPE balls using ball-on-disk sliding. The thickness values reached ~0.46, ~0.33, and ~1.67 μm for DLC, a-C, and TiN film, respectively. Nano-hardness of the coatings compared with that of untreated and bonding strength (critical load in nano-scratch test) values of composite coatings compared with that of monolayer film all increased significantly, respectively. Under destructive test (ZrO2 ball conterface) in bovine serum lubrication, TiN coating revealed the best wear resistance while DLC showed the worst. Film failure was mainly attributed to the plowing by hard ZrO2 ball characterized by abrasive and adhesive wear. Under normal test (UHMWPE ball conterface), all coatings showed significant improvement in wear resistance both in dry sliding and bovine serum lubrication. Both DLC and a-C films showed less surface damage than TiN film due to the self-lubricating phenomenon in dry sliding. TiN film showed the largest friction coefficient both in destructive and normal tests, devoting to the big TiN grains thus leading to much rougher surface and then a higher value. The self-lubricating film formed on DLC and a-C coating could also decrease their friction coefficients. The results indicated that three coatings revealed different wear mechanisms, and thick DLC or a-C film was more promising in application in lower stress conditions such as artificial cervical disk.

  20. Crystalline silicon thin-film solar cells. Final report; Duennschicht-Solarzellen aus kristallinem Silizium. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Raeuber, A.; Wettling, W.; Eyer, A.; Faller, F.; Hebling, C.; Hurrle, A.; Lautenschlager, H.; Luedemann, R.; Lutz, F.; Reber, S.; Schetter, C.; Schillinger, N.; Schindler, R.; Schumacher, J.O.; Warta, W.

    1998-09-01

    Activities under the project covered all the processes involved in the fabrication of a crystalline silicon thin-film solar cell applying the high-temperature method, so that R and D work was carried out from testing of materials suitable for the dielectric and semiconductive layers required, development of the process sequences for fabrication of the solar cells, simulation and optimisation of the cell design through to final characterisation of the thin films and solar cells. Several cell designs were tested in parallel for intercomparison. Several high-temperature resistant materials were tested for their suitability to serve as substrate materials.The final project report presents the basic research work and studies on the physical and technological aspects of the crystalline thin-film solar cell as well as the major results of specific development work. The report shows that significant progress could be achieved. The efficiencies of all solar cell designs developed under the project are between 9 and 11%, including those using substrate materials easily available in industry, and it could be demonstrated that the solar cells are equal in potential to the wafer-based silicon cell. (orig./CB) [Deutsch] Es wurden alle wesentlichen Teilprozesse, die fuer die Entwicklung einer kristallinen Silicium Duennschicht-Solarzelle nach dem Hochtemperaturverfahren wichtig sind, bearbeitet. Der Projektrahmen reichte von der Materialentwicklung fuer die dielektrischen und halbleitenden Schichten ueber die Entwicklung der Solarzellenprozessschritte, die Simulation und Optimierung des Zellendesigns bis zur Charakterisierung von Schichten und Solarzellen. Dabei wurden mehrere verschiedene Zellentypen parallel untersucht und miteinander verglichen. In einer Studie wurden verschiedene hochtemperaturfeste Materialien auf ihre Eignung als Substrate hin untersucht. In dem hier vorgelegten Abschlussbericht werden die erarbeiteten Grundlagen zur Physik und Technologie der kristallinen

  1. Sputter deposition of transition-metal carbide films — A critical review from a chemical perspective

    Energy Technology Data Exchange (ETDEWEB)

    Jansson, Ulf, E-mail: ulf.jansson@kemi.uu.se [Department of Chemistry, Ångström, Uppsala Universitet (Sweden); Lewin, Erik [Laboratory for Nanoscale Materials Science, Empa (Switzerland); Department of Chemistry, Ångström, Uppsala Universitet (Sweden)

    2013-06-01

    Thin films based on transition-metal carbides exhibit many interesting physical and chemical properties making them attractive for a variety of applications. The most widely used method to produce metal carbide films with specific properties at reduced deposition temperatures is sputter deposition. A large number of papers in this field have been published during the last decades, showing that large variations in structure and properties can be obtained. This review will summarise the literature on sputter-deposited carbide films based on chemical aspects of the various elements in the films. By considering the chemical affinities (primarily towards carbon) and structural preferences of different elements, it is possible to understand trends in structure of binary transition-metal carbides and the ternary materials based on these carbides. These trends in chemical affinity and structure will also directly affect the growth process during sputter deposition. A fundamental chemical perspective of the transition-metal carbides and their alloying elements is essential to obtain control of the material structure (from the atomic level), and thereby its properties and performance. This review covers a wide range of materials: binary transition-metal carbides and their nanocomposites with amorphous carbon; the effect of alloying carbide-based materials with a third element (mainly elements from groups 3 through 14); as well as the amorphous binary and ternary materials from these elements deposited under specific conditions or at certain compositional ranges. Furthermore, the review will also emphasise important aspects regarding materials characterisation which may affect the interpretation of data such as beam-induced crystallisation and sputter-damage during surface analysis.

  2. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  3. Final Technical Report: A Paradigm Shift in Chemical Processing: New Sustainable Chemistries for Low-VOC Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Kenneth F.

    2006-07-26

    The project employed new processes to make emulsion polymers from reduced levels of petroleum-derived chemical feedstocks. Most waterborne paints contain spherical, emulsion polymer particles that serve as the film-forming binder phase. Our goal was to make emulsion polymer particles containing 30 percent feedstock that would function as effectively as commercial emulsions made from higher level feedstock. The processes developed yielded particles maintained their film formation capability and binding capacity while preserving the structural integrity of the particles after film formation. Rohm and Haas Company (ROH) and Archer Daniels Midland Company (ADM) worked together to employ novel polymer binders (ROH) and new, non-volatile, biomass-derived coalescing agents (ADM). The University of Minnesota Department of Chemical Engineering and Material Science utilized its unique microscopy capabilities to characterize films made from the New Emulsion Polymers (NEP).

  4. Use of modified chemical route for ZnSe nanocrystalline thin films growth: Study on surface morphology and physical properties

    Science.gov (United States)

    Kale, R. B.; Lokhande, C. D.; Mane, R. S.; Han, Sung-Hwan

    2006-06-01

    The zinc selenide thin films have been deposited using modified chemical bath deposition (M-CBD) method. Zinc acetate and sodium selenosulphate were used as Zn 2+ and Se 2- ion sources, respectively. The preparative parameters such as concentration, pH, number of deposition cycles have been optimized in order to deposit ZnSe thin films. The as-deposited ZnSe thin films are specularly reflective and faint yellowish in color. The as-deposited ZnSe films are annealed in an air atmosphere at 473 K for 2 h. The films are characterized using structural, morphological, compositional, optical and electrical properties.

  5. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Science.gov (United States)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  6. Preparation and characterization of nanostructured copper bismuth diselenide thin films from a chemical route

    Indian Academy of Sciences (India)

    R H Bari; L A Patil

    2010-12-01

    Thin films of copper bismuth diselenide were prepared by chemical bath deposition technique onto glass substrate below 60°C. The deposition parameters such as time, temperature of deposition and pH of the solution, were optimized. The set of films having different elemental compositions was prepared by varying Cu/Bi ratio from 0.13–1.74. Studies on structure, composition, morphology, optical absorption and electrical conductivity of the films were carried out and discussed. Characterization includes X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX), absorption spectroscopy, and electrical conductivity. The results are discussed and interpreted.

  7. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

    2005-12-22

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

  8. Thin film CdS/Cu/sub 2/S solar cells by chemical spraying

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, J.F.

    1976-12-15

    This project involves further work on a process developed to make very thin film CdS/Cu/sub 2/S solar cells. The process is adapted to the float glass process and consists of spraying suitable chemicals on a moving ribbon of glass which floats on a bath of molten metal. The spraying produces the necessary thin films (with suitable optical and electrical properties) of SnO/sub 2/, CdS and Cu/sub 2/S. The CdS films produced are two to three microns thick, thus conserving the use of cadmium. The estimated cost per peak watt is approximately 7 cents (1975 costs) at 5 percent efficiency and an output of 37.6 x 10/sup 6/ square meters annually. The cells are blackwall cells. A float glass plant modified for the process is shown schematically. Research progress is described.

  9. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  10. Inducing Changes in Surface Topography of Copper Thin Films: Implications for Chemical Mechanical Polishing

    Science.gov (United States)

    Smith, C. L.; Mitchell, E. J. R.; Koeck, D. C.; Galloway, H. C.

    2000-10-01

    We have investigated the effects of pH and corrosion inhibitors on the surface of Cu films when exposed and polished in H_2O2 based slurries. Acetic Acid was used to buffer H_2O2 into the acidic range necessary to keep the corrosion inhibitor, benzotriazole (BTA) in solution. Surface characteristics were examined using atomic force microscopy and profilometry. Some conditions cause dramatic changes in the surface topography of the Cu films. The original small "grains" that give the film a uniform roughness, disappear and leave large crystalline appearing structures with terrace widths of up to 600 Åand heights of 200-1000 ÅWe believe these changes have strong implications for Chemical Mechanical Polishing processes used to manufacture integrated circuits and will discuss how these changes in surface topography may be occurring.

  11. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambade, Swapnil B. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Mane, R.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Kale, S.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Sonawane, S.H. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Shaikh, Arif V. [Department of Electronic Science, AKI' s Poona College of Arts, Science and Commerce, Camp, Pune 411 001 (India); Han, Sung-Hwan [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of)]. E-mail: shhan@hanyang.ac.kr

    2006-12-15

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 deg. C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu{sub 2-x}Se phase was confirmed by XRD pattern and spherical grains of 30 {+-} 4 - 40 {+-} 4 nm in size aggregated over about 130 {+-} 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm{sup 2} light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  12. Characterization of chemical bath deposited buffer layers for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Dwyer, D.; Efstathiadis, H.; Haldar, P. [College of Nanoscale Science and Engineering, University at Albany - State University of New York, 257 Fuller Rd., Albany, NY 12203 (United States); Sun, R. [Angstrom Sun Technologies Inc., 33 Nagog Park, Acton, MA 01720 (United States)

    2010-10-15

    Cadmium sulfide (CdS), indium sulfide (In{sub 2}S{sub 3}) and zinc sulfide (ZnS) thin films have been deposited by chemical bath deposition (CBD) for buffer layer applications in Cu-chalcopyrite-based thin film solar cells. Films were characterized by scanning electron microscopy (SEM), UV-Vis transmission, X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXRD), and spectroscopic ellipsometry. Results indicate CdS can be deposited with low oxygen content and high light transmission over 245-1700 nm. CBD-ZnS and CBD-InS both exhibit 5-10% less light transmission than CdS in the same thickness range. In terms of light transmission and degree of impurities CdS appears to be a better buffer material than CBD-ZnS or CBD-InS. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  13. Robust large-gap quantum spin Hall insulators in chemically decorated arsenene films

    Science.gov (United States)

    Wang, Dongchao; Chen, Li; Shi, Changmin; Wang, Xiaoli; Cui, Guangliang; Zhang, Pinhua; Chen, Yeqing

    2016-03-01

    Based on first-principles calculations, we propose one new category of two-dimensional topological insulators (2D TIs) in chemically functionalized (-CH3 and -OH) arsenene films. The results show that the surface decorated arsenene (AsCH3 and AsOH) films are intrinsic 2D TIs with sizeable bulk gap. The bulk energy gaps are 0.184 eV, and 0.304 eV in AsCH3 and AsOH films, respectively. Such large bulk gaps make them suitable to realize quantum spin Hall effect in an experimentally accessible temperature regime. Topologically helical edge states in these systems are desirable for dissipationless transport. Moreover, we find that the topological properties in these systems are robust against mechanical deformation by exerting biaxial strain. These novel 2D TIs with large bulk gaps are potential candidate in future electronic devices with ultralow dissipation.

  14. Chemically ordered face-centred tetragonal Fe–Pt nanoparticles embedded SiO2 films

    Indian Academy of Sciences (India)

    Sourav Pramanik; Goutam De

    2012-12-01

    Chemically ordered face-centred tetragonal (fct) Fe–Pt alloy nanoparticles (NPs) embedded SiO2 films were synthesized on glass substrate by in situ hybrid sol–gel approach followed by heating at 450–900 °C in air and reducing (10% H2–90% Ar) atmospheres. Heat treatment of Fe/Pt co-doped films in air caused generation of Pt NPs first. At this stage, Fe remained in ionic state covalently bonded with silica network. Further heat treatment at 800–900 °C in reducing atmosphere facilitated the formation of uniformly dispersed fct Fe–Pt alloy NPs in amorphous SiO2 film matrix. The generated alloy composition was estimated by grazing incidence X-ray diffraction and TEM analysis to be Fe0.42Pt0.58 which is close to the nominal value.

  15. Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Wang Jin-Liang; Wu Er-Xing

    2007-01-01

    The B-and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD) .The microstructures of doped nc-Si:H films are carefully and systematically char acterized by using high resolution electron microscopy (HREM) ,Raman scattering,x-ray diffraction (XRD) ,Auger electron spectroscopy (AES) ,and resonant nucleus reaction (RNR) .The results show that as the doping concentration of PH3 increases,the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously.For the B-doped samples,as the doping concentration of B2H6 increases,no obvious change in the value of d is observed,but the value of Xc is found to decrease.This is especially apparent in the case of heavy B2H6 doped samples,where the films change from nanocrystalline to amorphous.

  16. Synthesis and characterization of chemically deposited CdS thin films without toxic precursors.

    Science.gov (United States)

    Fernández-Pérez, A.; Sandoval-Paz, M. G.

    2016-05-01

    Al doped and undoped CdS thin films (CdS:Al) were deposited on glass, copper and bronze substrates by chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. The structural and optical properties of the CdS films were determined by X-ray diffraction (XRD), scanning electron microscope (SEM), and simultaneous transmission- reflection spectroscopy. It was found that the properties of the films depend on the amount of Al in the growth solutions and deposition time. The increase in Al content in the reaction solution led to a smaller crystallite size and higher energy band gap that varies in the range 2.42 eV - 2.59 eV depending on the Al content.

  17. Faraday effect of polycrystalline bismuth iron garnet thin film prepared by mist chemical vapor deposition method

    Science.gov (United States)

    Yao, Situ; Kamakura, Ryosuke; Murai, Shunsuke; Fujita, Koji; Tanaka, Katsuhisa

    2017-01-01

    We have synthesized polycrystalline thin film composed of a single phase of metastable bismuth iron garnet, Bi3Fe5O12, on a fused silica substrate, one of the most widely utilized substrates in the solid-state electronics, by using mist chemical vapor deposition (mist CVD) method. The phase purity and stoichiometry are confirmed by X-ray diffraction and Rutherford backscattering spectrometry. The resultant thin film shows a small surface roughness of 3.251 nm. The saturation magnetization at room temperature is 1200 G, and the Faraday rotation angle at 633 nm reaches -5.2 deg/μm. Both the magnetization and the Faraday rotation angles are somewhat higher than those of polycrystalline BIG thin films prepared by other methods.

  18. Metal-assisted chemical etching of CIGS thin films for grain size analysis

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

    2016-09-15

    Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

  20. CuInS 2 thin films obtained through the annealing of chemically deposited In 2S 3-CuS thin films

    Science.gov (United States)

    Peña, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vázquez, A.; Gómez, I.; Elizondo, P.

    2011-01-01

    In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2S 3) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  1. Increased Surface Roughness in Polydimethylsiloxane Films by Physical and Chemical Methods

    Directory of Open Access Journals (Sweden)

    Jorge Nicolás Cabrera

    2017-08-01

    Full Text Available Two methods, the first physical and the other chemical, were investigated to modify the surface roughness of polydimethylsiloxane (PDMS films. The physical method consisted of dispersing multi-walled carbon nanotubes (MWCNTs and magnetic cobalt ferrites (CoFe2O4 prior to thermal cross-linking, and curing the composite system in the presence of a uniform magnetic field H. The chemical method was based on exposing the films to bromine vapours and then UV-irradiating. The characterizing techniques included scanning electron microscopy (SEM, energy-dispersive spectroscopy (EDS, Fourier transform infrared (FTIR spectroscopy, optical microscopy, atomic force microscopy (AFM and magnetic force microscopy (MFM. The surface roughness was quantitatively analyzed by AFM. In the physical method, the random dispersion of MWCNTs (1% w/w and magnetic nanoparticles (2% w/w generated a roughness increase of about 200% (with respect to PDMS films without any treatment, but that change was 400% for films cured in the presence of H perpendicular to the surface. SEM, AFM and MFM showed that the magnetic particles always remained attached to the carbon nanotubes, and the effect on the roughness was interpreted as being due to a rupture of dispersion randomness and a possible induction of structuring in the direction of H. In the chemical method, the increase in roughness was even greater (1000%. Wells were generated with surface areas that were close to 100 μm2 and depths of up to 500 nm. The observations of AFM images and FTIR spectra were in agreement with the hypothesis of etching by Br radicals generated by UV on the polymer chains. Both methods induced important changes in the surface roughness (the chemical method generated the greatest changes due to the formation of surface wells, which are of great importance in superficial technological processes.

  2. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs.

  3. Chemical and physical properties of poly (vinyl alcohol) hydrogel films formed by irradiation

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    Chemical and physical properties of poly(vinyl alcohol)(PVA) hydrogel films were investigated as a function of production factors.The experimental results show that the gel fraction dependsstrongly on the radiation dose, the degree of swelling is inverselydependent on the concentration of PVA solution, the tensile strengthdepends mainly on the PVA blending ratio and the elongation at breakis inversely dependent on the radiation dose.

  4. Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Kirlin, Peter S.; Binder, R.; Gardiner, R.; Brown, Duncan W.

    1990-03-01

    Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

  5. A New Method of Photopatterning with LB Films Based on a Chemically Amplified Mechanism

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A new approach to introducing a photoacid generator(PAG) into Langmuir-Blodgett(LB) films to draw photopatterns as a lithographic process is described here. The chemically amplified positive-tone resist system used here consists of two components: a copolymer, poly(dodecrylacrylamide-co-4-t-butyloxylvinyl-phenylcarbonate)[P(DDA-t-BVPC53)] and a PAG, tri(2,3-dibromopropyl) isocyanurate(TDBPIC). In the two-component system, the acid generated by the PAG catalyzes the deprotection reaction of P(DDA-t-BVPC53), to remove the tert-butoxycarbonyl group(t-BOC) in the exposed region during the postexposure baking process, thus rendering the exposed region soluble to alkaline aqueous solvents to form a positive tone. Photolithographic properties of the LB films have been evaluated. The patterns can be resolved with a resolution of 1 μm line width by UV irradiation, followed by development with an alkaline solution. The LB films can be used to generate etched gold relief images on a glass substrate via an aqueous iodide, like ammonium iodide, in alcohol/water as the etchant. The etch resistance of such LB films is sufficiently good, allowing patterning of a gold film suitable for photomask fabrication.

  6. Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

    Science.gov (United States)

    Sall, Thierno; Marí Soucase, Bernabé; Mollar, Miguel; Hartitti, Bouchaib; Fahoume, Mounir

    2015-01-01

    In2S3 thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In2S3 thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In2S3 phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.

  7. Preparation of YBCO-BYTO and YBCO-BZO nanostructured superconducting films by chemical method

    Science.gov (United States)

    Garcés, P.; Coll, M.; Castro, H.; Puig, T.; Obradors, X.

    2017-01-01

    YBCO-BYTO6% and YBCO-BZO10% YBa2Cu3O7-d-Ba2YTaO6 6% (YBCO-BYTO6%) and YBa2Cu3O7--BaZrO3 10% (YBCO-BZO 10%) nanostructured films were grown by the Chemical Solution Deposition method, and compared with YBCO pure films. Films were deposited on YSZ substrates, with Ce0.9Zr0.1O2 and Ce0.6Zr0.4O2 buffer layers. They were characterized by GADDS X-ray diffraction, scanning electron microscopy (SEM) and inductive (SQUID) measurements of the critical temperature (Tc) and critical current density (Jc). It was found that YBCO-BZO10% films presented better superconducting properties (Tc=89.2K and Jc=1.3MA/cm2), probably due to an enhanced pinning force, originated by BZO nanoparticles. Additionally, it was found that these films have lower reactivity with the buffer layer.

  8. Chemical Bonding States of TiC Films before and after Hydrogen Ion Irradiation

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    TiC films deposited by rf magnetron sputtering followed by Ar+ ion bombardment were irradiated with a hydrogen ion beam. X-ray photoelectron spectroscopy (XPS) was used for characterization of the chemical bonding states of C and Ti elements of the TiC films before and after hydrogen ion irradiation, in order to understand the effect of hydrogen ion irradiation on the films and to study the mechanism of hydrogen resistance of TiC films. Conclusions can be drawn that ion bombardment at moderate energy can cause preferential physical sputtering of carbon atoms from the surface of low atomic number (Z) material. This means that ion beam bombardment leads to the formation of a non-stoichiometric composition of TiC on the surface.TiC films prepared by ion beam mixing have the more excellent characteristic of hydrogen resistance. One important cause, in addition to TiC itself, is that there are many vacant sites in TiC created by ion beam mixing.These defects can easily trap hydrogen and effectively enhance the effect of hydrogen resistance.

  9. Cadmium Sulfide Thin Films Deposited onto MWCNT/Polysulfone Substrates by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    M. Moreno

    2016-01-01

    Full Text Available Cadmium sulfide (CdS thin films were deposited by chemical bath deposition (CBD onto polymeric composites with electric field-aligned multiwall carbon nanotubes (MWCNTs. MWCNT/polysulfone composites were prepared by dispersing low concentrations of MWCNTs within dissolved polysulfone (PSF. An alternating current electric field was “in situ” applied to align the MWCNTs within the dissolved polymer along the field direction until the solvent was evaporated. 80 μm thick solid MWCNT/PSF composites with an electrical conductivity 13 orders of magnitude higher than the conductivity of the neat PSF were obtained. The MWCNT/PSF composites were subsequently used as flexible substrates for the deposition of CdS thin films by CBD. Transparent and adherent CdS thin films with an average thickness of 475 nm were obtained. The values of the energy band gap, average grain size, rms roughness, crystalline structure, and preferential orientation of the CdS films deposited onto the polymeric substrate were very similar to the corresponding values of the CdS deposited onto glass (conventional substrate. These results show that the MWCNT/PSF composites with electric field-tailored MWCNTs represent a suitable option to be used as flexible conducting substrate for CdS thin films, which represents an important step towards the developing of flexible systems for photovoltaic applications.

  10. Effects of rf power on chemical composition and surface roughness of glow discharge polymer films

    Science.gov (United States)

    Zhang, Ling; He, Xiaoshan; Chen, Guo; Wang, Tao; Tang, Yongjian; He, Zhibing

    2016-03-01

    The glow discharge polymer (GDP) films for laser fusion targets were successfully fabricated by plasma enhanced chemical vapor deposition (PECVD) at different radio frequency (rf) powers. The films were deposited using trans-2-butene (T2B) mixed with hydrogen as gas sources. The composition and state of plasma were diagnosed by quadrupole mass spectrometer (QMS) and Langmuir probe during the deposition process. The composition, surface morphology and roughness were investigated by Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and white-light interferometer (WLI), respectively. Based on these observation and analyses, the growth mechanism of defects in GDP films were studied. The results show that, at low rf power, there is a larger probability for secondary polymerization and formation of multi-carbon C-H species in the plasma. In this case, the surface of GDP film turns to be cauliflower-like. With the increase of rf power, the degree of ionization is high, the relative concentration of smaller-mass hydrocarbon species increases, while the relative concentration of larger-mass hydrocarbon species decreases. At higher rf power, the energy of smaller-mass species are high and the etching effects are strong correspondingly. The GDP film's surface roughness shows a trend of decrease firstly and then increase with the increasing rf power. At rf power of 30 W, the surface root-mean-square roughness (Rq) drops to the lowest value of 12.8 nm, and no "void" defect was observed.

  11. Poly(vinyl alcohol) nanocomposite films containing chemically exfoliated molybdenum disulfide

    Energy Technology Data Exchange (ETDEWEB)

    Batista Mancinelli, Ketlin Cristine; Lisboa, Fabio da Silva [Centro de Pesquisa em Quimica Aplicada - CEPESQ, Laboratorio de Quimica de Materiais Avancados, Universidade Federal do Parana, Departamento de Quimica, Caixa Postal 19081, 81531-980 Curitiba, PR (Brazil); Soares, Jaisa Fernandes [Laboratorio de Quimica Bioinorganica, Universidade Federal do Parana, Departamento de Quimica, Caixa Postal 19081, 81531-980 Curitiba, PR (Brazil); Zawadzki, Sonia Faria [Laboratorio de Polimeros Sinteticos, Universidade Federal do Parana, Departamento de Quimica, Caixa Postal 19081, 81531-980 Curitiba, PR (Brazil); Wypych, Fernando, E-mail: wypych@ufpr.br [Centro de Pesquisa em Quimica Aplicada - CEPESQ, Laboratorio de Quimica de Materiais Avancados, Universidade Federal do Parana, Departamento de Quimica, Caixa Postal 19081, 81531-980 Curitiba, PR (Brazil)

    2013-01-15

    Molybdenum disulfide (2H-MoS{sub 2}) was exfoliated in water after reaction with n-butyl-lithium. Using either alkaline or neutral conditions, different amounts of the resulting single-layer suspension were employed as filler for the production of poly(vinyl alcohol) films containing distinct disulfide contents. These nanocomposite films were obtained by wet casting and were further characterized by powder X-ray diffraction (XRD), differential scanning calorimetry (DSC), and Fourier transform infrared (FTIR) and Raman spectroscopies. The mechanical properties of the films were also evaluated. Characterization studies revealed the attainment of homogeneous nanocomposite films in both alkaline and neutral conditions, indicating good distribution and interaction of the hydrophilic filler with the polyhydroxylated polymer. Improved Young's (tensile) modulus (+57%) and tensile strength (+9%) as well as reduced elongation (-78%) were achieved only when the neutral suspension of single layers was utilized. Increased MoS{sub 2} content diminished the crystallinity of the polymer, while enhanced mechanical properties were obtained in the presence of intermediate filler content (around 1 wt%). Highlights: Black-Right-Pointing-Pointer Molybdenum disulfide (2H-MoS{sub 2}) was chemically exfoliated in water. Black-Right-Pointing-Pointer MoS{sub 2} single-layer suspension was used as filler for poly(vinyl alcohol) films. Black-Right-Pointing-Pointer Increased MoS{sub 2} content diminished the crystallinity of the polymer. Black-Right-Pointing-Pointer Enhanced mechanical properties were obtained with intermediate filler content.

  12. Kinetics of diamond-like film growth using filament-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gorsuch, G.; Jin, Y.; Ingle, N.K.; Mountziaris, T.J.; Yu, W.Y.; Petrou, A. [State Univ. of New York, Buffalo, NY (United States)

    1995-08-01

    A detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The model includes both gas-phase and surface reactions. The surface kinetics include adsorption of CH{sub 3}{center_dot} and H{center_dot}, abstraction reactions by gas phase radicals, desorption, and two pathways for diamond (sp{sup 3}) and graphitic carbon (sp{sup 2}) growth. It is postulated that adsorbed CH{sub 2}{center_dot} species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. Diamond-like films were deposited on preceded Si substrates in such a reactor as a pressure of 26 Torr, inlet gas composition ranging from 0.5% to 1.5% methane in hydrogen and substrate temperatures ranging from 600 to 950 C. The best films were obtained at low methane concentrations and substrate temperature of 700 C. The films were characterized using Scanning Electron Microscopy (SEM) and Raman spectroscopy. Observations from their experiments and growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

  13. Growth of nanocrystalline silicon carbide thin films by plasma enhanced chemical vapor deposition

    CERN Document Server

    Lee, S W; Moon, J Y; Ahn, S S; Kim, H Y; Shin, D H

    1999-01-01

    Nanocrystalline silicon carbide thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiH sub 4 , CH sub 4 , and H sub 2 gases. The effects of gas mixing ratio (CH sub 4 /SiH sub 4), deposition temperature, and RF power on the film properties have been studied. The growth rate, refractive index, and the optical energy gap depends critically on the growth conditions. The dependence of the growth rate on the gas flow ratio is quite different from the results obtained for the growth using C sub 2 H sub 2 gas instead of CH sub 4. As the deposition temperature is increased from 300 .deg. C to 600 .deg. C, hydrogen and carbon content in the film decreases and as a result the optical gap decreases. At the deposition temperature of 600 .deg. C and RF power of 150 W, the film structure si nanocrystalline, As the result of the nanocrystallization the dark conductivity is greatly improved. The nanocrystalline silicon carbide thin films may be used for large area optoelectronic devices...

  14. Controlled cadmium telluride thin films for solar-cell applications. Final technical report, June 1, 1980-May 31, 1981

    Energy Technology Data Exchange (ETDEWEB)

    Das, M.B.; Krishnaswamy, S.V.

    1981-06-01

    The objectives of this contract were to carry out a systematic study on the preparation and characterization of rf-sputtered CdTe thin films in order to establish reproducibility of the films with good electrical characteristics and to demonstrate the feasibility of fabricating various types of junctions and ohmic contacts with reproducible characteristics and finally to optimize the most promising solar cell structure in order to achieve an efficiency of 6% or higher. Efforts have been directed to the control of various sputtering parameters in order to obtain good quality films. The structure, crystallographic, compositional and electrical properties of cadmium telluride films sputtered over a wide range of conditions have been evaluated. A series of doping experiments have been carried out using primarily Cd, Te, In, as the n-type dopants and Cu as the p-type dopant. Of these dopants, indium doping provided films with which S.B. junctions can be obtained for further electrical characterization. Use of cadmium overpressure during CdTe:In sputtering has improved the film characteristics. Ion Beam Sputtering was attempted as an alternative technique for film preparation. For lack of time and due to a number of mechanical failures, no significant results could be obtained.

  15. Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis

    Science.gov (United States)

    Juma, A.; Oja Acik, I.; Oluwabi, A. T.; Mere, A.; Mikli, V.; Danilson, M.; Krunks, M.

    2016-11-01

    Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO2 thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO2 thin films were uniform and homogeneous showing much smaller grains than the undoped TiO2 films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO2 film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO4 phase started forming after annealing at 800 °C. The optical band gap for TiO2 decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO2:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

  16. The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

    Science.gov (United States)

    Aliev, V. S.; Gerasimova, A. K.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Badmaeva, I. A.

    2016-08-01

    Non-stoichiometric HfOx films of different chemical composition (x partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf4O7 suboxide and stoichiometric HfO2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf4O7 suboxide concentration is maximal at x = 1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO2, when annealed at high temperature.

  17. Surface reactivity and layer analysis of chemisorbed reaction films in the surface-chemical environment of alkyl octadecenoates

    Indian Academy of Sciences (India)

    R B Choudhary; O N Anand; O S Tyagi

    2009-05-01

    Studies on surface reactivity of substrate iron (Fe-particles) were made in the tribo-chemical environment of alkyl octadecenoates. Two alkyl octadecenoates namely ethyl octadecenoate and methyl 12-hydroxy octadecenoate, slightly different in their chemical nature, were taken for preparing the chemisorbed reaction films (CRF) at the temperature 100 ± 5°C. The reaction products collected in the composite (amorphous) phase were isolated into three different solvent-soluble fractions (sub-layer films) using polar solvents of increasing polar strength. The FTIR analysis of these films showed that these were primarily organic in nature and were composed of alkyl and/or aryl hydroxy ethers, unsaturated hydroxy ketones, and aromatic structures chemically linked with iron surface. These reaction films also contained large amount of iron (Fe). Further, these film fractions also showed varying thermal behaviour during thermal decomposition in the temperature range of 50-800°C when thermally evaluated in the nitrogen environment.

  18. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

    Science.gov (United States)

    Jung, Younghun; Baik, Kwang Hyeon; Mastro, Michael A; Hite, Jennifer K; Eddy, Charles R; Kim, Jihyun

    2014-08-14

    Wet chemical etching using hot KOH and H3PO4 solutions was performed on semipolar (11̄22) and nonpolar (11̄20) GaN films grown on sapphire substrates. An alternating KOH/H3PO4/KOH etch process was developed to control the orientation of the facets on the thin-film surface. The initial etch step in KOH produced c- and m-plane facets on the surface of both semipolar (11̄22) and nonpolar (11̄20) GaN thin-films. A second etch step in H3PO4 solution additionally exposed a (̄1̄12̄2) plane, which is chemically stable in H3PO4 solution. By repeating the chemical etch with KOH solution, the m-plane facets as seen in the original KOH etch step were recovered. The etching methods developed in our work can be used to control the surface morphologies of nonpolar and semipolar GaN-based optoelectronic devices such as light-emitting diodes and solar cells.

  19. Zirconium doped TiO{sub 2} thin films deposited by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Juma, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Department of Physics and Astronomy, Botswana International University of Science and Technology, Private bag 16, Palapye (Botswana); Oja Acik, I., E-mail: ilona.oja@ttu.ee [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Oluwabi, A.T.; Mere, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, V.; Danilson, M. [Chair of Semiconductor Materials Technology, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, M. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

    2016-11-30

    Highlights: • Mean crystallite size of TiO{sub 2}:Zr film decreases with increasing [Zr] in the solution. • Zr doping supresses the anatase to rutile transformation process in TiO{sub 2} films. • Band gap of TiO{sub 2}:Zr film is 3.4 eV irrespective of the annealing temperature. - Abstract: Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO{sub 2} thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO{sub 2} thin films were uniform and homogeneous showing much smaller grains than the undoped TiO{sub 2} films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO{sub 2} film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO{sub 4} phase started forming after annealing at 800 °C. The optical band gap for TiO{sub 2} decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO{sub 2}:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

  20. TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition

    Directory of Open Access Journals (Sweden)

    Zorica Branković

    2012-06-01

    Full Text Available Lanthanum nickelate (LNO is a perovskite oxide material with metallic conductivity in a wide temperature range which makes it suitable for application as electrode material for thin films. In this paper LNO thin films were prepared by polymerizable complex method from the diluted citrate solutions. Precursor solutions were spin coated onto Si-substrates with amorphous layer of SiO2. Deposited layers were thermally treated from the substrate side with low heating rate (1 °/min up to 700 °C and finally annealed for 10 hours. Results of AFM and FESEM showed that films are very smooth (Ra = 4 nm, dense, crack-free and with large square-shaped grains (170 nm. According to FESEM and TEM results the obtained four-layered film was only 65 nm thin. EBSD and XRD analyses confirmed polycrystalline microstructure of the films without preferential orientation. It was concluded that the presence of SiO2 layer on Si substrate prevents epitaxial or oriented growth of LNO.

  1. Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Chang; YAN Yun-Jie; ZHU Jing

    2007-01-01

    Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.

  2. An Evaluative Investigation of Silent Loop Films in the Teaching of Anatomy, Final Report.

    Science.gov (United States)

    Welser, John R.

    Investigated were (1) the acceptance and effectiveness of silent film loops as a teaching and review aid, (2) the possible substitution of loop films for prosected and/or fresh dissection materials, and (3) the comparative costs of loop films used in the presentation of five units of a gross anatomy course and six units of an applied anatomy…

  3. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  4. Development of a new laser heating system for thin film growth by chemical vapor deposition.

    Science.gov (United States)

    Fujimoto, Eiji; Sumiya, Masatomo; Ohnishi, Tsuyoshi; Lippmaa, Mikk; Takeguchi, Masaki; Koinuma, Hideomi; Matsumoto, Yuji

    2012-09-01

    We have developed a new laser heating system for thin film growth by chemical vapor deposition (CVD). A collimated beam from a high-power continuous-wave 808 nm semiconductor laser was directly introduced into a CVD growth chamber without an optical fiber. The light path of the heating laser inside the chamber was isolated mechanically from the growth area by bellows to protect the optics from film coating. Three types of heat absorbers, (10 × 10 × 2 mm(3)) consisting of SiC, Ni/NiO(x), or pyrolytic graphite covered with pyrolytic BN (PG/PBN), located at the backside of the substrate, were tested for heating performance. It was confirmed that the substrate temperature could reach higher than 1500 °C in vacuum when a PG/PBN absorber was used. A wide-range temperature response between 400 °C and 1000 °C was achieved at high heating and cooling rates. Although the thermal energy loss increased in a H(2) gas ambient due to the higher thermal conductivity, temperatures up to 1000 °C were achieved even in 200 Torr H(2). We have demonstrated the capabilities of this laser heating system by growing ZnO films by metalorganic chemical vapor deposition. The growth mode of ZnO films was changed from columnar to lateral growth by repeated temperature modulation in this laser heating system, and consequently atomically smooth epitaxial ZnO films were successfully grown on an a-plane sapphire substrate.

  5. Industrialization of Hot Wire Chemical Vapor Deposition for thin film applications

    Energy Technology Data Exchange (ETDEWEB)

    Schropp, R.E.I., E-mail: r.e.i.schropp@tue.nl

    2015-11-30

    The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical Vapor Deposition. The most important consequences are the technical consequences and the economic consequences, which are both discussed. The technical consequences are adaptations needed to the hardware and to the processing sequences due to the different interaction of the HWCVD process with the substrate and already deposited layers. The economic consequences are the reduced investments in radio frequency (RF) supplies and RF components. This is partially offset by investments that have to be made in higher capacity pumping systems. The most mature applications of HWCVD are moisture barrier coatings for thin film flexible devices such as Organic Light Emitting Diodes and Organic Photovoltaics, and passivation layers for multicrystalline Si solar cells, high mobility field effect transistors, and silicon heterojunction cells (also known as heterojunction cells with intrinsic thin film layers). Another example is the use of Si in thin film photovoltaics. The cost perspective per unit of thin film photovoltaic product using HWCVD is estimated at 0.07 €/Wp for the Si thin film component. - Highlights: • Review of consequences of implementing Hot Wire CVD into a manufacturing plant • Aspects of scaling up to large area and continuous manufacturing are discussed • Economic advantage of introducing a HWCVD process in a production system is estimated • Using HWCVD, the cost for the Si layers in photovoltaic products is 0.08 €/Wp.

  6. Optical and Chemical Properties of Mixed-valent Rhenium Oxide Films Synthesized by Reactive DC Magnetron Sputtering

    Science.gov (United States)

    2015-04-03

    AFRL-RX-WP-JA-2015-0178 OPTICAL AND CHEMICAL PROPERTIES OF MIXED- VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE DC MAGNETRON...To) 06 May 2010 – 16 March 2015 4. TITLE AND SUBTITLE OPTICAL AND CHEMICAL PROPERTIES OF MIXED-VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE ...DC MAGNETRON SPUTTERING (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62102F 6. AUTHOR(S) (see

  7. Replacement of chemical intensive water treatment processes with energy saving membrane. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Mickley, M.C.; Goering, S.W.

    1983-11-01

    The project investigated the use of charged ultrafiltration membranes to treat hard water. More specifically, the work was undertaken to (1) make charged ultrafiltration membranes to demonstrate the technical feasibility of the chemical grafting approach; (2) evaluate the market potential for charged ultrafiltration membranes; and (3) evaluate the cost and energy savings for using charged ultrafiltration as compared to lime-based clarification and other treatment methods. The results suggest that chemical grafting is a relatively simple, reproducible and low-cost way to modify existing substrate materials to give them enhanced transport performance. Process studies lead to the identification of good market potential for membrane processes using charged ultrafiltration membranes. Capital and operating costs relative to lime-based clarification are favorable for low- and medium-sized treatment plants. Finally, substantial energy savings are apparent as compared to lime-based precipitation systems which incur substantial energy consumption in the lime production and transportation steps.

  8. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D., E-mail: l_chandrakant@yahoo.com

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

  9. Assessment of uncertainties in risk analysis of chemical establishments. The ASSURANCE project. Final summary report

    DEFF Research Database (Denmark)

    Lauridsen, K.; Kozine, Igor; Markert, Frank;

    2002-01-01

    This report summarises the results obtained in the ASSURANCE project (EU contract number ENV4-CT97-0627). Seven teams have performed risk analyses for the same chemical facility, an ammonia storage. The EC's Joint Research Centre at Ispra and RisøNational Laboratory co-ordinated the exercise...... on the ranking among the adherents of the probabilistic approach. Breaking down the modelling of both frequencyand consequence assessments into suitably small elements and conducting case studies allowed identifying root causes of uncertainty in the final risk assessments. Large differences were found in both...... the frequency assessments and in the assessment ofconsequences. The report gives a qualitative assessment of the importance to the final calculated risk of uncertainties in assumptions made, in the data and the calculation methods used. This assessment can serve as a guide to areas where, in particular...

  10. Effects of rf power on chemical composition and surface roughness of glow discharge polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ling; He, Xiaoshan; Chen, Guo; Wang, Tao; Tang, Yongjian; He, Zhibing, E-mail: hezhibing802@163.com

    2016-03-15

    Graphical abstract: - Highlights: • The growth mechanism of defects in GDP films was studied upon plasma diagnosis. • Increasing rf power enhanced the etching effects of smaller-mass species. • The “void” defect was caused by high energy hydrocarbons bombardment on the surface. • The surface roughness was only 12.76 nm, and no “void” defect was observed at 30 W. - Abstract: The glow discharge polymer (GDP) films for laser fusion targets were successfully fabricated by plasma enhanced chemical vapor deposition (PECVD) at different radio frequency (rf) powers. The films were deposited using trans-2-butene (T{sub 2}B) mixed with hydrogen as gas sources. The composition and state of plasma were diagnosed by quadrupole mass spectrometer (QMS) and Langmuir probe during the deposition process. The composition, surface morphology and roughness were investigated by Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and white-light interferometer (WLI), respectively. Based on these observation and analyses, the growth mechanism of defects in GDP films were studied. The results show that, at low rf power, there is a larger probability for secondary polymerization and formation of multi-carbon C-H species in the plasma. In this case, the surface of GDP film turns to be cauliflower-like. With the increase of rf power, the degree of ionization is high, the relative concentration of smaller-mass hydrocarbon species increases, while the relative concentration of larger-mass hydrocarbon species decreases. At higher rf power, the energy of smaller-mass species are high and the etching effects are strong correspondingly. The GDP film's surface roughness shows a trend of decrease firstly and then increase with the increasing rf power. At rf power of 30 W, the surface root-mean-square roughness (Rq) drops to the lowest value of 12.8 nm, and no “void” defect was observed.

  11. Comments on: 'Gallium-doped ZnO thin films deposited by chemical spray'

    Energy Technology Data Exchange (ETDEWEB)

    Tiburcio-Silver, Arturo [Instituto Tecnologico de Toluca, Department of Electric and Electronic Engineering, Apdo. postal 20, 52172 Metepec 3, Edo. Mexico (Mexico)

    2007-01-23

    In this communication, I will discuss some aspects concerning a paper recently published by H. Gomez et al. on the properties of gallium-doped ZnO thin films deposited by chemical spray methods [H. Gomez, A. Maldonado, M. de la L. Olvera, D.R. Acosta, Sol. Energy Mater. Sol. Cells 87 (2005) 107.]. I believe that there are some wrong considerations of basic principles, some incorrect experimental procedures and inconsistencies on the analysis and throughout the paper. The 'Introduction' reflects some knowledge on the subject, but it seems that the authors of the aforementioned paper use outdated background sources in some cases, and inconsistently apply prior research in others. The 'Experimental procedure' shows some serious lack of knowledge concerning thin films that are potentially applicable as transparent electrodes in photovoltaic devices. In the 'Results and discussion', I found some of the arguments and statements contradictory, mainly when the effects of their vacuum annealing were being discussed. Considerations on the 'Structural properties' are necessary, as they are not appropriate for comparative purposes. Finally, a last point, but not less important than the others, is the 'Conclusions' of the paper. Some suggestions are made below for the improvement of this, and several others, aspects of the paper. (author)

  12. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dabirian, Ali [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Kuzminykh, Yury, E-mail: yury.kuzminykh@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Wagner, Estelle; Benvenuti, Giacomo [3D-Oxides, 70 Rue G. Eiffel Technoparc, 01630 St Genis Pouilly (France); ABCD Technology, 12 route de Champ-Colin, 1260 Nyon (Switzerland); Rushworth, Simon [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork (Ireland); Hoffmann, Patrik, E-mail: patrik.hoffmann@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland)

    2014-11-28

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb{sub 2}(OEt){sub 10} does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt){sub 5} acts as an octahedral field completing entity and leads to Nb(OEt){sub 4}(dmae). We show that Nb(OEt){sub 4}(dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h{sup −1} to values larger than 400 nm·h{sup −1} can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt){sub 4}(dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt){sub 4}(dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an

  13. Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

    Institute of Scientific and Technical Information of China (English)

    C.U. Mordi; M.A. Eleruja; B.A. Taleatu; G.O. Egharevba; A.V. Adedeji; 0.0. Akinwunmi; B. Olofinjana; C. Jeynes; E.O.B. Ajayi

    2009-01-01

    The single solid source precursor, cobalt (Ⅱ) acetylacetonate was prepared and characterized by infrared spec-troscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis (metal organic chemical vapour deposition (MOCVD)) of single solid source precursor, cobalt acetylaceto-nate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction (XRD), showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2.15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron mi-croscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than 1 micron for the deposited thin films of cobalt oxide.

  14. Structural, Optical and Electrical Properties of Nanocrystalline Cuprous Oxide Thin Film Deposited By Chemical Method

    Directory of Open Access Journals (Sweden)

    Prakash Bansilal Ahirrao

    2010-06-01

    Full Text Available Cuprous oxide (Cu2O is an interesting p-type semiconductor material used in solar cell applications.  The Modified Chemical Bath Deposition (M-CBD method is suitable for growing thin multilayer structure due to low deposition temperature. This method does not require any sophisticated instrument and substrate need not to be conductive. The nanocrystalline Cu2O thin films were deposited on glass substrates by M-CBD method. The deposited films were characterized by different characterization techniques to study structural, surface morphological, optical and electrical properties. The structural studies show that, the formation of Cu2O thin films with an average crystallite size of 14 nm. Optical studies show a direct band gap 2.48 eV. The room temperature electrical resistivity is of the order of 1.3 kW-cm and activation energy 0.33 eV. The films exhibit p-type electrical conductivity as seen by thermo-emf measurements.

  15. Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

    CERN Document Server

    Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

    2002-01-01

    The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

  16. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  17. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  18. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  19. Eggshell- and fur-like microstructures of yttrium silicate film prepared by laser chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Akihiko, E-mail: itonium@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Miyagi (Japan); Endo, Jun; Kimura, Teiichi; Goto, Takashi [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Miyagi (Japan)

    2011-01-01

    Yttrium silicate (Y-Si-O) films with eggshell- and fur-like microstructures were prepared by laser chemical vapor deposition using a Nd:YAG laser, and tetraethyl orthosilicate (TEOS) and yttrium dipivaloylmethane (Y(dpm){sub 3}) precursors. Amorphous Y-Si-O films were prepared at deposition temperature below 1200 K. The crystalline Y-Si-O films with mixtures of Y{sub 4.67}(SiO{sub 4}){sub 3}O and {alpha}-Y{sub 2}Si{sub 2}O{sub 7} phases were obtained at deposition temperature above 1200 K. y-Y{sub 2}Si{sub 2}O{sub 7} and X1-Y{sub 2}SiO{sub 5} minor phases were also formed at a higher deposition temperature. At deposition temperature ranging between 1285 and 1355 K, a dome-like structure covered with fine fur-like projections was formed under a total pressure of 3.5 kPa, whereas an eggshell-like structure 200-300 {mu}m in diameter and 10-20 {mu}m in shell thickness was formed at 7.5 kPa. The deposition rate for the Y-Si-O films with fur- and eggshell-like microstructures reached 300 and 1000 {mu}m h{sup -1}, respectively.

  20. Changes in chemical composition and nanostructure of SiC thin films prepared by PECVD during thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kuenle, Matthias; Janz, Stefan [Fraunhofer Institute of Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Nickel, Klaus Georg [Applied Mineralogy, Institute for Geosciences, Eberhard-Karl-University Tuebingen, Wilhelmstr. 52, 72074 Tuebingen (Germany); Eibl, Oliver [Institute for Applied Physics, Eberhard-Karls-University Tuebingen, Auf der Morgenstelle 10, 72074 Tuebingen (Germany)

    2011-08-15

    Silicon carbide (SiC) thin films were deposited on silicon (Si) using plasma enhanced chemical vapor deposition (PECVD). Annealing was done in a rapid thermal annealing furnace at a temperature of 1300 C. As-deposited and annealed Si-rich and stoichiometric SiC thin films were investigated by analytical transmission electron microscopy (AEM). TEM-energy-dispersive X-ray spectroscopy was used to quantify the chemical composition of the SiC thin films with high accuracy. The chemical composition of the near stoichiometric SiC thin film changed during annealing from Si{sub 0.4}C{sub 0.6} to Si{sub 0.5}C{sub 0.5} due to diffusion of Si from the Si substrate into the film. The Si-rich Si{sub 1-x}C{sub x} film had the identical chemical composition of Si{sub 0.8}C{sub 0.2} before and after annealing. As-deposited films show nanoporosity within the bulk film. During annealing, v-shaped defect structures were formed at the interface of the stoichiometric SiC thin film to the Si substrate. Diffraction patterns revealed that as-deposited films were amorphous. During annealing the crystallization of 3C-SiC occurred in near-stoichiometric SiC thin films, whereas in Si-rich Si{sub 1-x}C{sub x} thin films two phases, namely Si and 3C-SiC, crystallized. Low-loss and core-loss electron energy loss spectroscopy (EELS) verified the diffraction results. In the low-loss spectra of the near stoichiometric SiC thin film, a plasmon peak located at 20.2 eV before and at 22.3 eV after annealing was detected. The low-loss spectra of the Si-rich Si{sub 1-x}C{sub x} thin film showed an asymmetric plasmon peak with two maxima located at 18.5 and 25.0 eV in the as-deposited film and 18.6 and 24.3 eV in the annealed Si-rich Si{sub 1-x}C{sub x} film. The 18.5 eV plasmon peaks is assigned to Si and the 25 eV plasmon peak is attributed to the SiC phase. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Preparation of Nano-Particles (Pb,La)TiO3 Thin Films by Liquid Source Misted Chemical Deposition

    Institute of Scientific and Technical Information of China (English)

    张之圣; 曾建平; 李小图

    2004-01-01

    Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60 nm. The deposition speed is 3 nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300 ℃ for 10 min and anneal at 600 ℃ for 1 h.

  2. Tribological and thermal stability study of nanoporous amorphous boron carbide films prepared by pulsed plasma chemical vapor deposition

    Science.gov (United States)

    Liza, Shahira; Ohtake, Naoto; Akasaka, Hiroki; Munoz-Guijosa, Juan M.

    2015-06-01

    In this work, the thermal stability and the oxidation and tribological behavior of nanoporous a-BC:H films are studied and compared with those in conventional diamond-like carbon (DLC) films. a-BC:H films were deposited by pulsed plasma chemical vapor deposition using B(CH3)3 gas as the boron source. A DLC interlayer was used to prevent the a-BC:H film delamination produced by oxidation. Thermal stability of a-BC:H films, with no delamination signs after annealing at 500 °C for 1 h, is better than that of the DLC films, which completely disappeared under the same conditions. Tribological test results indicate that the a-BC:H films, even with lower nanoindentation hardness than the DLC films, show an excellent boundary oil lubricated behavior, with lower friction coefficient and reduce the wear rate of counter materials than those on the DLC film. The good materials properties such as low modulus of elasticity and the formation of micropores from the original nanopores during boundary regimes explain this better performance. Results show that porous a-BC:H films may be an alternative for segmented DLC films in applications where severe tribological conditions and complex shapes exist, so surface patterning is unfeasible.

  3. Structure and composition of Zn(x)Cd(1-xS) films synthesized through chemical bath deposition.

    Science.gov (United States)

    Tosun, B Selin; Pettit, Chelsea; Campbell, Stephen A; Aydil, Eray S

    2012-07-25

    Zinc cadmium sulfide (ZnxCd1-xS) thin films grown through chemical bath deposition are used in chalcopyrite solar cells as the buffer layer between the n-type zinc oxide and the p-type light absorbing chalcopyrite film. To optimize energetic band alignment and optical absorption, advanced solar cell architectures require the ability to manipulate x as a function of distance from the absorber-ZnCdS interface. Herein, we investigate the fundamental factors that govern the evolution of the composition as a function of depth in the film. By changing the initial concentrations of Zn and Cd salts in the bath, the entire range of overall compositions ranging from primarily cubic ZnS to primarily hexagonal CdS could be deposited. However, films are inhomogeneous and x varies significantly as function of distance from the film-substrate interface. Films with high overall Zn concentration (x > 0.5) exhibit a Cd-rich layer near the film-substrate interface because Cd is more reactive than Zn. This layer is typically beneath a nearly pure ZnS film that forms after the Cd-rich layers are deposited and Cd is depleted in the bath. In films with high overall Cd concentration (x < 0.5) the Zn concentration rises towards the film's surface. Fortunately, these gradients are favorable for solar cells based on low band gap chalcopyrite films.

  4. Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Lately, there has been a sharp increase in the publication of papers on chemical bath deposition of CdS thin films and related materials due to successful results obtained using this method to fabricate CdS thin-film buffer layers for CuInSe{sub 2}- and CdTe-based polycrystalline thin-film solar cells. Generally, these papers focus on previously proposed methods of studying film characteristics without a systematic study of the influence of deposition conditions on film characteristics. In this paper the authors present an exhaustive study of the chemical bath-deposited CdS thin films electro-optical properties dependence on deposition variables. The authors propose not only a set of conditions for obtaining CdS thin films by this method but additionally, suitable deposition process conditions for certain application requirements, such as buffer layers for thin-film solar cells. The observed electro-optical characteristics dependence on the deposition variables corroborates the chemical mechanism that they proposed previously for this process.

  5. Structural, morphology and optical properties of chemically deposited Sb{sub 2}S{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Maghraoui-Meherzi, H., E-mail: hajer.maghraoui@laposte.ne [Laboratoire de chimie Analytique et Electrochimie, Faculte des Sciences de Tunis, Campus universitaire 2092 Tunis El Manar (Tunisia); Ben Nasr, T.; Kamoun, N. [Laboratoire de physique de la Matiere Condensee, Faculte des Sciences de Tunis, Campus universitaire 2092 Tunis El Manar (Tunisia); Dachraoui, M. [Laboratoire de chimie Analytique et Electrochimie, Faculte des Sciences de Tunis, Campus universitaire 2092 Tunis El Manar (Tunisia)

    2010-08-01

    Metal chalcogenide thin films prepared by chemical methods are currently attracting considerable attention, as they are relatively inexpensive, simple and convenient for large area deposition. Antimony sulphide (Sb{sub 2}S{sub 3}) films were deposited on glass substrate by chemical bath deposition from solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Characterization of the films was carried out with X-ray diffraction (XRD), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and UV-Vis spectrophotometry. Using these techniques, we have specified the effect of temperature and time deposition on the crystallinity structure of antimony sulphide films. Homogeneous films were found to be crystallized on orthorhombic structure, and indicate a direct band gap of 2.24 eV.

  6. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1996-01-01

    This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

  7. Impact of the De-Alloying Kinetics and Alloy Microstructure on the Final Morphology of De-Alloyed Meso-Porous Metal Films

    Directory of Open Access Journals (Sweden)

    Bao Lin

    2014-10-01

    Full Text Available Nano-textured porous metal materials present unique surface properties due to their enhanced surface energy with potential applications in sensing, molecular separation and catalysis. In this paper, commercial alloy foils, including brass (Cu85Zn15 and Cu70Zn30 and white gold (Au50Ag50 foils have been chemically de-alloyed to form nano-porous thin films. The impact of the initial alloy micro-structure and number of phases, as well as chemical de-alloying (DA parameters, including etchant concentration, time and solution temperature on the final nano-porous thin film morphology and properties were investigated by electron microscopy (EM. Furthermore, the penetration depth of the pores across the alloys were evaluated through the preparation of cross sections by focus ion beam (FIB milling. It is demonstrated that ordered pores ranging between 100 nm and 600 nm in diameter and 2–5 μm in depth can be successfully formed for the range of materials tested. The microstructure of the foils were obtained by electron back-scattered diffraction (EBSD and linked to development of pits across the material thickness and surface during DA. The role of selective etching of both noble and sacrificial metal phases of the alloy were discussed in light of the competitive surface etching across the range of microstructures and materials tested.

  8. Plasma environment during hot cathode direct current discharge plasma chemical vapor deposition of diamond films

    Institute of Scientific and Technical Information of China (English)

    朱晓东; 詹如娟; 周海洋; 胡敏; 温晓辉; 周贵恩; 李凡庆

    1999-01-01

    The plasma characteristics have been investigated in situ by using optical emission spectroscopy (OES) and the Langmuir probe during hot cathode direct current discharge plasma chemical vapor deposition of diamond films. The changes of atomic H and CH radical in the ground state have been calculated quantitatively according to the results of OES and the Langmuir probe measurement as discharge current density varied. It is shown that atomic H and CH radicals both in the ground state and in the excited state increase with the enhancement of the discharge current density in the plasma. The electron density and CH emission intensity increase linearly with the enhancement of discharge current densities. The generation of different carbon-containing radicals is related to the elevation of electron temperature. Combining the growth process of diamond films and the diagnostic results, it is shown that atomic H in the excited state may improve the diamond growth efficiently, and the increase of electron temperat

  9. Structural analysis of CdS thin films obtained by multiple dips of oscillating chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez Lazos, C.D. [Seccion de Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Rosendo, E., E-mail: erosendo@siu.buap.m [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico); Ortega, M. [Seccion de Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Oliva, A.I. [Departamento de Fisica Aplicada, Centro de Investigacion y de Estudios Avanzados, Unidad Merida, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico); Tapia, O.; Diaz, T.; Juarez, H.; Garcia, G. [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico); Rubin, M. [Facultad de Ciencias de la Computacion, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico)

    2009-11-25

    Highly oriented CdS thin films with thicknesses greater than 1 mum were deposited by multiple dips, using oscillating chemical bath deposition (OCBD) at the bath temperature of 75 deg. C, and deposition time ranging from 15 to 75 min for a single dip. Samples with different thickness were prepared by repeating the deposition process for two and three times. The films deposited by a single dip have the alpha-greenockite structure showing the (0 0 2) as preferred orientation, as indicated by the X-ray diffraction measurements. This notable characteristic is preserved in the samples obtained from two or three dips. The crystallite size for the samples deposited by a single dip depends on the deposition time, because it varied from 23 to 37 nm as the deposition time increased. Nevertheless for samples deposited by two and three dips, the grain size shows no noticeable change, being about 22 nm.

  10. Simultaneous growth of diamond and nanostructured graphite thin films by hot-filament chemical vapor deposition

    Science.gov (United States)

    Ali, M.; Ürgen, M.

    2012-01-01

    Diamond and graphite films on silicon wafer were simultaneously synthesized at 850 °C without any additional catalyst. The synthesis was achieved in hot-filament chemical vapor deposition reactor by changing distance among filaments in traditional gas mixture. The inter-wire distance for diamond and graphite deposition was kept 5 and 15 mm, whereas kept constant from the substrate. The Raman spectroscopic analyses show that film deposited at 5 mm is good quality diamond and at 15 mm is nanostructured graphite and respective growths confirm by scanning auger electron microscopy. The scanning electron microscope results exhibit that black soot graphite is composed of needle-like nanostructures, whereas diamond with pyramidal featured structure. Transformation of diamond into graphite mainly attributes lacking in atomic hydrogen. The present study develops new trend in the field of carbon based coatings, where single substrate incorporate dual application can be utilized.

  11. Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Shuang-Bao

    2000-01-01

    Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120keV H+ to dose of 5 × 1014 ~ 5 × 1016cm-2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases. In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.

  12. Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Jun-Shuai; WANG Jin-Xiao; YIN Min; GAO Ping-Qi; HE De-Yan

    2006-01-01

    Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350 C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of Al atoms are detected in Si layer within the limit (< 0.01 at. %) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.

  13. Wet Chemical Synthesis and Screening of Thick Porous Oxide Films for Resistive Gas Sensing Applications

    Directory of Open Access Journals (Sweden)

    Wilhelm F. Maier

    2006-11-01

    Full Text Available A method of wet chemical synthesis suitable for high throughput and combinatorial applications has been developed for the synthesis of porous resistive thick-film gas sensors. This method is based on the robot-controlled application of unstable metal oxide suspensions on an array of 64 inter-digital electrodes positioned on an Al2O3 substrate. SnO2, WO3, ZrO2, TiO2, CeO2, In2O3 and Bi2O3 were chosen as base oxides, and were optimised by doping or mixed oxide formation. The parallel synthesis of mixed oxide sensors is illustrated by representative examples. The electrical characteristics and the sensor performance of the films were measured by high-throughput impedance spectroscopy while supplying various test gases (H2, CO, NO, NO2, propene. Data collection, data mining techniques applied and the best potential sensor materials discovered are presented.

  14. Characterization and Wettability of ZnO Film Prepared by Chemical Etching Method

    Institute of Scientific and Technical Information of China (English)

    GUO Hua-xi; JIA Hui-ying; ZENG Jian-bo; CONG Qian; REN Lu-quan

    2013-01-01

    ZnO thin films were prepared by a chemical etching method and their wettability was investigated.The structure and surface composition structure were characterized by means of scanning electron microscopy,X-ray photoelectronic spectrometry(XPS),X-ray diffraction(XRD) and Raman spectrometry.These analyses reveal that the etched films were large-scale micro-nanohierarchical structures composed of a Zn core and a ZnO coating.Superhydrophobic surfaces with water contact angles of over 150° were obtained by n-octadecanethiol(ODT) modification.The XPS and Raman results indicate that ODT molecules were bound to the ZnO surface with the S head group by forming Zn—S bond.

  15. Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition

    Science.gov (United States)

    Jung, Jae-Soo; Lee, Sang-Hoon; Kim, Da-Seul; Kim, Kun-Su; Park, Soon-Won; Hwang, Nong-Moon

    2017-01-01

    The deposition behavior of silicon films by hot wire chemical vapor deposition (HWCVD) was approached by non-classical crystallization, where the building block of deposition is a nanoparticle generated in the gas phase of the reactor. The puzzling phenomenon of the formation of an amorphous incubation layer on glass could be explained by the liquid-like property of small charged nanoparticles (CNPs), which are generated in the initial stage of the HWCVD process. Using the liquid-like property of small CNPs, homo-epitaxial growth as thick as 150 nm could be successfully grown on a silicon wafer at 600 °C under the processing condition where CNPs as small as possible could be supplied steadily by a cyclic process which periodically resets the process. The size of CNPs turned out to be an important parameter in the microstructure evolution of thin films.

  16. Note: Setup for chemical atmospheric control during in situ grazing incidence X-ray scattering of printed thin films

    Science.gov (United States)

    Pröller, Stephan; Moseguí González, Daniel; Zhu, Chenhuii; Schaible, Eric; Wang, Cheng; Müller-Buschbaum, Peter; Hexemer, Alexander; Herzig, Eva M.

    2017-06-01

    In order to tailor the assembling of polymers and organic molecules, a deeper understanding of the kinetics involved in thin film production is necessary. While post-production characterization only provides insight on the final film structure, more sophisticated experimental setups are needed to probe the structure formation processes in situ during deposition. The drying kinetics of a deposited organic thin film strongly influences the assembling process on the nanometer scale. This work presents an experimental setup that enables fine control of the atmosphere composition surrounding the sample during slot die coating, while simultaneously probing the film formation kinetics using in situ grazing incidence X-ray scattering and spectroscopy.

  17. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  18. Chemical Frustration. A Design Principle for the Discovery of New Complex Alloy and Intermetallic Phases, Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Fredrickson, Daniel C [Univ. of Wisconsin, Madison, WI (United States)

    2015-06-23

    Final technical report for "Chemical Frustration: A Design Principle for the Discovery of New Complex Alloy and Intermetallic Phases" funded by the Office of Science through the Materials Chemistry Program of the Office of Basic Energy Sciences.

  19. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Chikoidze, E.; Dumont, Y. [GEMaC, Université de Versailles St. Quentin en Yvelines-CNRS, Versailles (France); Fanciulli, M. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano (Italy)

    2014-05-07

    R-Fe-O (R = rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850 °C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  20. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    Science.gov (United States)

    Mantovan, R.; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G.; Chikoidze, E.; Dumont, Y.; Fanciulli, M.

    2014-05-01

    R-Fe-O (R = rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er2O3 and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO3 and ErFe2O4 phases develop following subsequent thermal annealing processes at 850 °C in air and N2. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  1. A comparative study of thin films of Zn(O;OH)S and In(O;OH)S deposited on CuInS2 by chemical bath deposition method

    Science.gov (United States)

    Vallejo, W.; Quiñones, C.; Gordillo, G.

    2012-04-01

    In this work, a study of synthesis of thin films of Zn(O;OH)S and In(O;OH)S deposited by chemical bath deposition (CBD) is presented. The thin films of Zn(O;OH)S and In(O;OH)S were deposited from different chemical bath systems on absorber layers of CuInS2 (CIS), indium tin oxide substrates (ITO) and soda lime glass substrates (SL). The differences on the growth rate, optical, morphological and structural properties of the thin films Zn(O;OH)S and In(O;OH)S are studied. The Growth studies showed that thin films of Zn(O;OH)S and In(O;OH)S grown faster on CIS than on SL and ITO substrates. The optical and morphological studies showed that both thin films present high transmittance in visible electromagnetic spectrum and covered uniformly the surface of the substrate, furthermore it was observed that thin films of Zn(O;OH)S and In(O;OH)S were polycrystalline. Finally, the results suggest that thin films of Zn(O;OH)S and In(O;OH)S obtained in this work could be used as buffer layer to replace the thin films of CdS, which are conventionally used as buffer layer in chalcopyrite based solar cells.

  2. Properties of MgB{sub 2} films grown at various temperatures by hybrid physical-chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ke; Veldhorst, Menno; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, Che-Hui; Lamborn, Daniel R; DeFrain, Raymond; Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2008-09-15

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB{sub 2} thin films and thick films at various temperatures. We are able to grow superconducting MgB{sub 2} thin films at temperatures as low as 350 deg. C with a T{sub c0} of 35.5 K. MgB{sub 2} films up to 4 {mu}m in thickness grown at 550 deg. C have J{sub c} over 10{sup 6} A cm{sup -2} at 5 K and zero applied field. The low deposition temperature of MgB{sub 2} films is desirable for all-MgB{sub 2} tunnel junctions and MgB{sub 2} thick films are important for applications in coated conductors.

  3. Optical Characteristics of La-Doped ZnS Thin Films Prepared by Chemical Bath Deposition

    Institute of Scientific and Technical Information of China (English)

    XIE Hai-Qing; CHEN Yuan; HUANG Wei-Qing; HUANG Gui-Fang; PENG Ping; PENG Li; WANG Tai-Hang; ZENG Yun

    2011-01-01

    Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O3. Composition of the films is analyzed using an energy-dispersive x-ray spectroscopy (EDS). Absorption spectra and spectral transmittances of the films are measured using a double beam UV-VIS spectrophotometer (TU-1901). It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum. Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin films. Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS. These results indicate that La-doped ZnS thin films could be valuably adopted as transparent electrodes.%@@ Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O2.Composition of the 61ms is analyzed using an energy-dispersive x-ray spectroscopy (EDS).Absorption spectra and spectral tra.nsmitta.nces of the 61ms are measured using a double beam UV-VIS spectrophotometer (TU-1901).It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum.Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin 61ms.Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS.These results indicate that La-doped ZnS thin 6hns could be valuably adopted as transparent electrodes.

  4. The production of fuels and chemicals from food processing wastes & cellulosics. Final research report

    Energy Technology Data Exchange (ETDEWEB)

    Dale, M.C.; Okos, M.; Burgos, N. [and others

    1997-06-15

    High strength food wastes of about 15-20 billion pounds solids are produced annually by US food producers. Low strength food wastes of 5-10 billion pounds/yr. are produced. Estimates of the various components of these waste streams are shown in Table 1. Waste paper/lignocellulosic crops could produce 2 to 5 billion gallons of ethanol per year or other valuable chemicals. Current oil imports cost the US about $60 billion dollars/yr. in out-going balance of trade costs. Many organic chemicals that are currently derived from petroleum can be produced through fermentation processes. Petroleum based processes have been preferred over biotechnology processes because they were typically cheaper, easier, and more efficient. The technologies developed during the course of this project are designed to allow fermentation based chemicals and fuels to compete favorably with petroleum based chemicals. Our goals in this project have been to: (1) develop continuous fermentation processes as compared to batch operations; (2) combine separation of the product with the fermentation, thus accomplishing the twin goals of achieving a purified product from a fermentation broth and speeding the conversion of substrate to product in the fermentation broth; (3) utilize food or cellulosic waste streams which pose a current cost or disposal problem as compared to high cost grains or sugar substrates; (4) develop low energy recovery methods for fermentation products; and finally (5) demonstrate successful lab scale technologies on a pilot/production scale and try to commercialize the processes. The scale of the wastes force consideration of {open_quotes}bulk commodity{close_quotes} type products if a high fraction of the wastes are to be utilized.

  5. Adherent and Conformal Zn(S,O,OH) Thin Films by Rapid Chemical Bath Deposition with Hexamethylenetetramine Additive.

    Science.gov (United States)

    Opasanont, Borirak; Van, Khoa T; Kuba, Austin G; Choudhury, Kaushik Roy; Baxter, Jason B

    2015-06-03

    ZnS is a wide band gap semiconductor whose many applications, such as photovoltaic buffer layers, require uniform and continuous films down to several nanometers thick. Chemical bath deposition (CBD) is a simple, low-cost, and scalable technique to deposit such inorganic films. However, previous attempts at CBD of ZnS have often resulted in nodular noncontinuous films, slow growth rates at low pH, and high ratio of oxygen impurities at high pH. In this work, ZnS thin films were grown by adding hexamethylenetetramine (HMTA) to a conventional recipe that uses zinc sulfate, nitrilotriacetic acid trisodium salt, and thioacetamide. Dynamic bath characterization showed that HMTA helps the bath to maintain near-neutral pH and also acts as a catalyst, which leads to fast nucleation and deposition rates, continuous films, and less oxygen impurities in the films. Films deposited on glass from HMTA-containing bath were uniform, continuous, and 90 nm thick after 1 h, as opposed to films grown without HMTA that were ∼3 times thinner and more nodular. On Cu2(Zn,Sn)Se4, films grown with HMTA were continuous within 10 min. The films have comparatively few oxygen impurities, with S/(S+O) atomic ratio of 88%, and high optical transmission of 98% at 360 nm. The Zn(S,O,OH) films exhibit excellent adhesion to glass and high resistivity, which make them ideal nucleation layers for other metal sulfides. Their promise as a nucleation layer was demonstrated with the deposition of thin, continuous Sb2S3 overlayers. This novel HMTA chemistry enables rapid deposition of Zn(S,O,OH) thin films to serve as a nucleation layer, a photovoltaic buffer layer, or an extremely thin continuous coating for thin film applications. HMTA may also be applied in a similar manner for solution deposition of other metal chalcogenide and oxide thin films with superior properties.

  6. Designation of Alpha-Phenylacetoacetonitrile (APAAN), a Precursor Chemical Used in the Illicit Manufacture of Phenylacetone, Methamphetamine, and Amphetamine, as a List I Chemical. Final rule.

    Science.gov (United States)

    2017-07-14

    The Drug Enforcement Administration (DEA) is finalizing the designation of the chemical alpha-phenylacetoacetonitrile (APAAN) and its salts, optical isomers, and salts of optical isomers, as a list I chemical under the Controlled Substances Act (CSA). The DEA proposed control of APAAN, due to its use in clandestine laboratories to illicitly manufacture the schedule II controlled substances phenylacetone (also known as phenyl-2-propanone or P2P), methamphetamine, and amphetamine. This rulemaking finalizes, without change, the control of APAAN as a list I chemical. This action does not establish a threshold for domestic and international transactions of APAAN. As such, all transactions involving APAAN, regardless of size, shall be regulated. In addition, chemical mixtures containing APAAN are not exempt from regulatory requirements at any concentration. Therefore, all transactions of chemical mixtures containing any quantity of APAAN shall be regulated pursuant to the CSA. However, manufacturers may submit an application for exemption for those mixtures that do not qualify for automatic exemption.

  7. Transparent heat insulating coatings on polyester film using chemically-prepared dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Chiba, K.; Sobajima, S.; Yatabe, T.

    1983-03-01

    Dielectric/metal/dielectric coatings have been formed on a polyethylene terephthalate (polyester) film using chemical and physical preparation techniques. Hydrolysis of tetra n-butyl titanate followed by condensation gave rise to a uniform transparent dielectric layer with relatively high refractive index. The metal layer was prepared by vacuum evaporation or dc-magnetron sputtering. Effects of coating parameters including solvents, thickness uniformity and carbon residues on optical properties are discussed. Prepared coatings have exhibited good spectral selectivities, i.e., transparent heat mirror characteristics; solar energy transmittance is 55-76%, and ir-reflectance at 10 micrometer wavelength is 72-97%.

  8. Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gálvez, S. [SpLine, Spanish CRG Beamline at the European Synchrotron Radiation Facility, B.P. 200, F-38043 Grenoble (France); Rubio-Zuazo, J., E-mail: rubio@esrf.fr; Salas-Colera, E.; Muñoz-Noval, A.; Castro, G. R. [SpLine, Spanish CRG Beamline at the European Synchrotron Radiation Facility, B.P. 200, F-38043 Grenoble (France); ICMM-CSIC Cantoblanco, E-28049 Madrid (Spain)

    2014-12-15

    Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

  9. High-purity cobalt thin films with perpendicular magnetic anisotropy prepared by chemical vapor deposition

    Science.gov (United States)

    Ootera, Yasuaki; Shimada, Takuya; Kado, Masaki; Quinsat, Michael; Morise, Hirofumi; Nakamura, Shiho; Kondo, Tsuyoshi

    2015-11-01

    A study of the chemical vapor deposition (CVD) of high-purity cobalt thin films is described. The Co layer prepared by a thermal CVD technique with a Pt/Ta underlayer and a Pt cap layer shows a saturation magnetization (Ms) of ∼1.8 T and perpendicular magnetic anisotropy (PMA) with an anisotropy energy (Ku) of ∼105 J/m3. The cobalt thickness dependence of Ku reveals that the interfacial anisotropy at the Pt/Co interface is most likely the origin of the obtained PMA.

  10. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Manasevit, H. M.; Ruth, R. P.; Moudy, L. A.; Yang, J. J.J.; Johnson, R. E.

    1980-08-01

    Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)

  11. Production of HfO2 thin films using different methods: chemical bath deposition, SILAR and sol-gel process

    Science.gov (United States)

    Kariper, İ. A.

    2014-08-01

    Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The optical properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

  12. LET dependence of the response of EBT2 films in proton dosimetry modeled as a bimolecular chemical reaction

    Science.gov (United States)

    Perles, L. A.; Mirkovic, D.; Anand, A.; Titt, U.; Mohan, R.

    2013-12-01

    The dose response for films exposed to clinical x-ray beams is not linear and a calibration curve based on absorbed dose can be used to account for this effect. However for proton dosimetry the dose response of films exhibits an additional dependence because of the variation of the linear energy transfer (LET) as the protons penetrate matter. In the present study, we hypothesized that the dose response for EBT2 films can be mathematically described as a bimolecular chemical reaction. Furthermore, we have shown that the LET effect can be incorporated in the dose-response curve. A set of EBT2 films was exposed to pristine 161.6 MeV proton beams. The films were exposed to doses ranging from 0.93 to 14.82 Gy at a depth of 2 cm in water. The procedure was repeated with one film exposed to a lower energy beam (85.6 MeV). We also computed the LET and dose to water in the sensitive layer of the films with a validated Monte Carlo system, taking into account the film construction (polyester, adhesive and sensitive layers). The bimolecular model was able to accurately fit the experimental data with a correlation factor of 0.9998, and the LET correction factor was determined and incorporated into the dose-response function. We also concluded that the film orientation is important when determining the LET correction factor because of the asymmetric construction of the film.

  13. Cinema audiences reproducibly vary the chemical composition of air during films, by broadcasting scene specific emissions on breath

    Science.gov (United States)

    Williams, Jonathan; Stönner, Christof; Wicker, Jörg; Krauter, Nicolas; Derstroff, Bettina; Bourtsoukidis, Efstratios; Klüpfel, Thomas; Kramer, Stefan

    2016-05-01

    Human beings continuously emit chemicals into the air by breath and through the skin. In order to determine whether these emissions vary predictably in response to audiovisual stimuli, we have continuously monitored carbon dioxide and over one hundred volatile organic compounds in a cinema. It was found that many airborne chemicals in cinema air varied distinctively and reproducibly with time for a particular film, even in different screenings to different audiences. Application of scene labels and advanced data mining methods revealed that specific film events, namely “suspense” or “comedy” caused audiences to change their emission of specific chemicals. These event-type synchronous, broadcasted human chemosignals open the possibility for objective and non-invasive assessment of a human group response to stimuli by continuous measurement of chemicals in air. Such methods can be applied to research fields such as psychology and biology, and be valuable to industries such as film making and advertising.

  14. Cinema audiences reproducibly vary the chemical composition of air during films, by broadcasting scene specific emissions on breath.

    Science.gov (United States)

    Williams, Jonathan; Stönner, Christof; Wicker, Jörg; Krauter, Nicolas; Derstroff, Bettina; Bourtsoukidis, Efstratios; Klüpfel, Thomas; Kramer, Stefan

    2016-05-10

    Human beings continuously emit chemicals into the air by breath and through the skin. In order to determine whether these emissions vary predictably in response to audiovisual stimuli, we have continuously monitored carbon dioxide and over one hundred volatile organic compounds in a cinema. It was found that many airborne chemicals in cinema air varied distinctively and reproducibly with time for a particular film, even in different screenings to different audiences. Application of scene labels and advanced data mining methods revealed that specific film events, namely "suspense" or "comedy" caused audiences to change their emission of specific chemicals. These event-type synchronous, broadcasted human chemosignals open the possibility for objective and non-invasive assessment of a human group response to stimuli by continuous measurement of chemicals in air. Such methods can be applied to research fields such as psychology and biology, and be valuable to industries such as film making and advertising.

  15. Processing and modeling issues for thin-film solar cell devices. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

    1997-11-01

    During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

  16. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    Science.gov (United States)

    Horsley, Kimberly Anne

    a wide surface band gap, as seen in Cu-poor films. A novel absorber was prepared Cu-rich with a final In-Se treatment to produce a Cu-poor surface, and compared directly to Cu-poor and Cu-rich produced samples. Despite reduced Cu at the surface, the novel absorber was found to have a surface band gap similar to that of traditional, Cu-poor grown absorbers. Furthermore, estimation of the near-surface bulk band gap suggests a narrowing of the band gap away from the surface, similar to highly efficient, Cu-poor grown absorbers. Long-term degradation is another concern facing solar cells, as heat and moistures stress can result in reduced efficiencies over time. The interface of the back contact material and absorber layer in (Au/Cu)/CdTe/CdS thin-film structures from the University of Toledo were investigated after a variety of accelerated stress treatments with the aim of further understanding the chemical and/or electronic degradation of this interface. Sulfur migration to the back contact was observed, along with the formation of Au-S and Cu-S bonds. A correlation between heat stress under illumination and the formation of Cu-Cl bonds was also found. Nanocomposite materials hold promise as a next-generation photovoltaic material and for use in LED devices, due in part to the unique ability to tune the absorption edge of the film by adjusting the semiconductor particle size, and the prospective for long-range charge-carrier (exciton) transport through the wide band gap matrix material. Thin films of CdTe were sputter deposited onto ZnO substrates at the University of Arizona and studied before and after a short, high temperature annealing to further understand the effects of annealing on the CdTe/ZnO interface. A clumping of the CdTe layer and the formation of Cd- and Te-oxides was observed using surface microscopy and photoelectron spectroscopy techniques. These findings help to evaluate post-deposition annealing as a treatment to adjust the final crystallinity and

  17. Surface morphology engineering of metal-oxide films by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, J.; Solis, J.L.; Estrada, W. [Instituto Peruano de Energia Nuclear, Av. Canada 1470, San Borja, Lima (Peru); Facultad de Ciencias, Universidad Nacional de Ingenieria, P.O. Box 31-139, Lima (Peru); Gomez, M. [Facultad de Ciencias, Universidad Nacional de Ingenieria, P.O. Box 31-139, Lima (Peru)

    2007-07-01

    The Chemical Spray Pyrolysis technique and a combination of sol-gel and spray pyrolysis techniques have been used in order to monitor the morphology of metal-oxide-based thin films to be used as functional materials. We can obtain surfaces from specular to rough-porous according to the physico-chemical conditions of the precursor/spraying solution. We have produced coatings of ZnO-based and NiO{sub x}-based coatings from alcoholic and aqueous solutions. A single glass, ITO-precoated glass or alumina was used as the substrate. Porous materials of WO{sub 3}, WO{sub 3}-SnO{sub 2} and SnO{sub 2} have been produced by spraying either inorganic or metal alkoxide gels over a hot substrate. The morphologies of coatings were evaluated by either SEM or optical measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  19. Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Science.gov (United States)

    Uno, Kazuyuki; Yamasaki, Yuichiro; Tanaka, Ichiro

    2017-01-01

    The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

  20. Final Report: "Collaborative Project. Understanding the Chemical Processes That Affect Growth Rates of Freshly Nucleated Particles"

    Energy Technology Data Exchange (ETDEWEB)

    Smith, James N. [NCAR, Boulder, CO (United States); McMurry, Peter H. [NCAR, Boulder, CO (United States)

    2015-11-12

    This final technical report describes our research activities that have, as the ultimate goal, the development of a model that explains growth rates of freshly nucleated particles. The research activities, which combine field observations with laboratory experiments, explore the relationship between concentrations of gas-phase species that contribute to growth and the rates at which those species are taken up. We also describe measurements of the chemical composition of freshly nucleated particles in a variety of locales, as well as properties (especially hygroscopicity) that influence their effects on climate. Our measurements include a self-organized, DOE-ARM funded project at the Southern Great Plains site, the New Particle Formation Study (NPFS), which took place during spring 2013. NPFS data are available to the research community on the ARM data archive, providing a unique suite observations of trace gas and aerosols that are associated with the formation and growth of atmospheric aerosol particles.

  1. Effect of different complexing agents on the properties of chemical-bath-deposited ZnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun; Wei, Aixiang, E-mail: weiax@gdut.edu.cn; Zhao, Yu

    2014-03-05

    Highlights: • To fabricate high quality ZnS films need to promote the ion-by-ion process and restrain cluster-by-cluster process. • The complexation ability of tri-sodium citrate is stronger than that of hydrazine hydrate. • The nucleation density of nuclei determine the performance of ZnS thin films. -- Abstract: Zinc sulfide (ZnS) thin films were deposited on glass substrates using the chemical bath deposition (CBD) technique. The effects of different complexing agents (tri-sodium citrate, hydrazine hydrate) and their concentrations on the structure, composition, morphology, optical properties and growth mechanism of ZnS thin films were investigated. The results indicated that the chemical-bath-deposited ZnS thin films exhibit poor crystallinity and a high Zn/S atomic ratio with an average transmittance of 75% in the range of visible light. The ZnS thin films prepared using hydrazine hydrate as the complexing agent present a more compact surface, a smaller average particle size, and a sharper absorption edge at 300–340 nm compared with those prepared using tri-sodium citrate. Based on our experimental observations and analysis, we conclude that the predominant growth mechanism of ZnS thin films is an ion-by-ion process. The nucleation density of Zn(OH){sub 2} nuclei on the substrate in the initial stage produces the different morphologies and properties of the ZnS thin films prepared using the two complexing agents.

  2. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    Science.gov (United States)

    Köllensperger, P. A.; Karl, W. J.; Ahmad, M. M.; Pike, W. T.; Green, M.

    2012-06-01

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant.

  3. Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

    KAUST Repository

    Hussain, Aftab M.

    2013-04-01

    Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.

  4. Impedance spectroscopy of manganite films prepared by metalorganic chemical vapor deposition.

    Science.gov (United States)

    Nakamura, Toshihiro; Homma, Kohei; Tachibana, Kunihide

    2011-09-01

    Polycrystalline Pr(1-x)CaxMnO3 (PCMO) films were prepared by liquid source metalorganic chemical vapor deposition using in situ infrared spectroscopic monitoring. The electric properties of the PCMO-based devices with Ni and Al electrodes (Ni-PCMO-Ni and Al-PCMO-Al devices) were studied by dc current-voltage (I-V) measurements and ac impedance spectroscopy. The current varied linearly with the applied voltage in Ni-PCMO-Ni devices, while nonlinear behavior was observed in I-V curves for Al-PCMO-Al devices. Impedance spectra were also different between Ni-PCMO-Ni and Al-PCMO-Al devices. The Cole-Cole plots for the Ni-PCMO-Ni devices showed only a single semicircular arc, which was assigned to the PCMO bulk impedance. Impedance spectra for the Al-PCMO-Al devices had two distinct components, which could be attributed to the PCMO bulk and to the interface between the PCMO film and the Al electrode, respectively. The bias dependence of the impedance spectra suggested that the resistance switching in the Al-PCMO-Al devices was mainly due to the resistance change in the interface between the film and the electrode. The metal electrode plays an important role in the resistance switching in the PCMO-based devices. The choice of the optimum metal electrodes is essential to the ReRAM application of the manganite-based devices.

  5. A reliable control system for measurement on film thickness in copper chemical mechanical planarization system.

    Science.gov (United States)

    Li, Hongkai; Qu, Zilian; Zhao, Qian; Tian, Fangxin; Zhao, Dewen; Meng, Yonggang; Lu, Xinchun

    2013-12-01

    In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules' GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

  6. A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongkai; Qu, Zilian; Zhao, Qian; Tian, Fangxin; Zhao, Dewen; Meng, Yonggang; Lu, Xinchun [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2013-12-15

    In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules’ GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

  7. Maximizing the dielectric response of molecular thin films via quantum chemical design.

    Science.gov (United States)

    Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

    2014-12-23

    Developing high-capacitance organic gate dielectrics is critical for advances in electronic circuitry based on unconventional semiconductors. While high-dielectric constant molecular substances are known, the mechanism of dielectric response and the fundamental chemical design principles are not well understood. Using a plane-wave density functional theory formalism, we show that it is possible to map the atomic-scale dielectric profiles of molecule-based materials while capturing important bulk characteristics. For molecular films, this approach reveals how basic materials properties such as surface coverage density, molecular tilt angle, and π-system planarity can dramatically influence dielectric response. Additionally, relatively modest molecular backbone and substituent variations can be employed to substantially enhance film dielectric response. For dense surface coverages and proper molecular alignment, conjugated hydrocarbon chains can achieve dielectric constants of >8.0, more than 3 times that of analogous saturated chains, ∼2.5. However, this conjugation-related dielectric enhancement depends on proper molecular orientation and planarization, with enhancements up to 60% for proper molecular alignment with the applied field and an additional 30% for conformations such as coplanarity in extended π-systems. Conjugation length is not the only determinant of dielectric response, and appended polarizable high-Z substituents can increase molecular film response more than 2-fold, affording estimated capacitances of >9.0 μF/cm2. However, in large π-systems, polar substituent effects are substantially attenuated.

  8. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    Science.gov (United States)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  9. Synthesis and Characterization of Vanadium Doped Zinc Oxide Thick Film for Chemical Sensor Application

    Directory of Open Access Journals (Sweden)

    Rayees Ahmad Zargar

    2015-01-01

    Full Text Available Zinc oxide and vanadium pentoxide nanoparticles derived by chemical coprecipitation route were used to cast Zn0.96V0.04O thick film by screen printing method. The structural, morphological, optical, and electrical properties of the film were characterized by powder XRD, SEM, Raman, UV-VIS, and DC conductivity techniques. XRD pattern, SEM image, and Raman spectrum of the film confirm the single phase formation of Wurtzite structure with preferential orientation along [101] plane, minor variation in lattice parameters, and vanadium ions substitution at zinc sites. Zn0.96V0.04O pellet has been used for sensing ammonia vapor concentrations in 20–50°C temperature range which exhibits maximum responsiveness and sensitivity at 30°C. The minor variations in resistance are observed with ammonia vapor concentration. The adsorption of ammonia vapors through weak hydrogen bonding and its insertion into lattice by nitrogen lone pairs donation at vacant/defect sites in lattice caused by vanadium doping are considered to explain gas sensing mechanism.

  10. Growth of TiO2 nanosheet-array thin films by quick chemical bath deposition for dye-sensitized solar cells

    Science.gov (United States)

    Zhu, Hu; Yang, Junyou; Feng, Shuanglong; Liu, Ming; Zhang, Jiansheng; Li, Gen

    2011-11-01

    Rutile TiO2 nanofilms, which were composed of many nanosheet-array domains with different orientations, were synthesized directly on fluorine-doped SnO2 conductive glass (FTO) substrates by a chemical deposition method in a short time in this paper. The average thickness of the nanosheets is about 10 nm; the nanosheets in each domain were parallel to each other and perpendicular to the substrate. The size and profile of the domains have a good correspondence to those of the FTO grains of the substrate, indicating a coherent nucleating and epitaxial growing nature of the films. The nanosheets split gradually and finally developed into nanofibers on prolonging the growing time to 20 h. Dye-sensitized solar cells, which were fabricated with the films, present an open-circuit voltage of 0.63 V and a short-circuit current of 7.02 mA/cm2, respectively.

  11. Probing nanoscale chemical segregation and surface properties of antifouling hybrid xerogel films.

    Science.gov (United States)

    Destino, Joel F; Gatley, Caitlyn M; Craft, Andrew K; Detty, Michael R; Bright, Frank V

    2015-03-24

    Over the past decade there has been significant development in hybrid polymer coatings exhibiting tunable surface morphology, surface charge, and chemical segregation-all believed to be key properties in antifouling (AF) coating performance. While a large body of research exists on these materials, there have yet to be studies on all the aforementioned properties in a colocalized manner with nanoscale spatial resolution. Here, we report colocalized atomic force microscopy, scanning Kelvin probe microscopy, and confocal Raman microscopy on a model AF xerogel film composed of 1:9:9 (mol:mol:mol) 3-aminopropyltriethoxysilane (APTES), n-octyltriethoxysilane (C8), and tetraethoxysilane (TEOS) formed on Al2O3. This AF film is found to consist of three regions that are chemically and physically unique in 2D and 3D across multiple length scales: (i) a 1.5 μm thick base layer derived from all three precursors; (ii) 2-4 μm diameter mesa-like features that are enriched in free amine (from APTES), depleted in the other species and that extend 150-400 nm above the base layer; and (iii) 1-2 μm diameter subsurface inclusions within the base layer that are enriched in hydrogen-bonded amine (from APTES) and depleted in the other species.

  12. The Process of Plasma Chemical Photoresist Film Ashing from the Surface of Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Siarhei Bordusau

    2013-01-01

    Full Text Available At present, the research for finding new technical methods of treating materials with plasma, including the development of energy and resource saving technologies for microelectronic manufacturing, is particularly actual.In order to improve the efficiency of microwave plasma chemical ashing of photoresist films from the surface of silicon wafers a two-stage process of treating was developed. The idea of the developed process is that wafers coated with photoresist are pre-heated by microwave energy. This occurs because the microwave energy initially is not spent on the excitation and maintenance of a microwave discharge but it is absorbed by silicon wafers which have a high tangent of dielectric losses. During the next step after the excitation of the microwave discharge the interaction of oxygen plasma with a pre-heated photoresist films proceeds more intensively. The delay of the start of plasma forming process in the vacuum chamber of a plasmatron with respect to the beginning of microwave energy generation by a magnetron leads to the increase of the total rate of photoresist ashing from the surface of silicon wafers approximately 1.7 times. The advantage of this method of microwave plasma chemical processing of semi-conductor wafers is the possibility of intensifying the process without changing the design of microwave discharge module and without increasing the input microwave power supplied into the discharge.

  13. Chemical nature of alkaline polyphosphate boundary film at heated rubbing surfaces

    Science.gov (United States)

    Wan, Shanhong; Tieu, A. Kiet; Zhu, Qiang; Zhu, Hongtao; Cui, Shaogang; Mitchell, David R. G.; Kong, Charlie; Cowie, Bruce; Denman, John A.; Liu, Rong

    2016-05-01

    Alkaline polyphosphate has been demonstrated to be able to reduce significant wear and friction of sliding interfaces under heavy loads (>1 GPa) and elevated temperature (800 °C and above) conditions, e.g. hot metal manufacturing. The chemical composition and fine structure of polyphosphate lubricating film is not well understood as well as the role of alkaline elements within the reaction film at hot rubbing surface. This work makes use of the coupling surface analytical techniques on the alkaline polyphosphate tribofilm, XANES, TOF-SIMS and FIB/TEM. The data show the composition in gradient distribution and trilaminar structure of tribofilm: a shorter chain phosphate overlying a long chain polyphosphate that adheres onto oxide steel base through a short chain phosphate. The chemical hardness model well explains the anti-abrasive mechanism of alkaline polyphosphate at elevated temperatures and also predicts a depolymerisation and simultaneous cross-linking of the polyphosphate glass. The role of alkaline elements in the lubrication mechanism is especially explained. This work firstly serves as a basis for a detailed study of alkaline polyphosphate tribofilm at temperature over 600 °C.

  14. Multiple depositions of Ag nanoparticles on chemically modified agarose films for surface-enhanced Raman spectroscopy

    Science.gov (United States)

    Zhai, Wen-Lei; Li, Da-Wei; Qu, Lu-Lu; Fossey, John S.; Long, Yi-Tao

    2011-12-01

    A facile and cost-effective approach for the preparation of a surface-enhanced Raman spectroscopy (SERS) substrate through constructing silver nanoparticle/3-aminopropyltriethoxysilane/agarose films (Ag NPs/APTES/Agar film) on various solid supports is described. The SERS performance of the substrate was systematically investigated, revealing a maximum SERS intensity with four layers of the Ag NP deposition. The enhancement factor of the developed substrate was calculated as 1.5 × 107 using rhodamine 6G (R6G) as the probe molecule, and the reproducibility of the SERS signals was established. A high throughput screening platform was designed, manufactured and implemented which utilised the ability to cast agarose to assemble arrays. Quantitative analysis of 4-aminobenzoic acid (4-ABA) and 4-aminothiophenol (4-ATP) was achieved over a ~0.5 nM-0.1 μM range.A facile and cost-effective approach for the preparation of a surface-enhanced Raman spectroscopy (SERS) substrate through constructing silver nanoparticle/3-aminopropyltriethoxysilane/agarose films (Ag NPs/APTES/Agar film) on various solid supports is described. The SERS performance of the substrate was systematically investigated, revealing a maximum SERS intensity with four layers of the Ag NP deposition. The enhancement factor of the developed substrate was calculated as 1.5 × 107 using rhodamine 6G (R6G) as the probe molecule, and the reproducibility of the SERS signals was established. A high throughput screening platform was designed, manufactured and implemented which utilised the ability to cast agarose to assemble arrays. Quantitative analysis of 4-aminobenzoic acid (4-ABA) and 4-aminothiophenol (4-ATP) was achieved over a ~0.5 nM-0.1 μM range. Electronic supplementary information (ESI) available: the chemical structure of agarose, the SEM characterization of the synthesised Ag NPs, the calculation of the EF, the stability of the SERS substrate. See DOI: 10.1039/c1nr10956a

  15. Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition.

    Science.gov (United States)

    Baek, Seung Hyun; Choi, Yura; Choi, Woong

    2015-12-01

    We report the largest-size thin films of uniform single-layer MoS2 on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO3 and S evaporated from solid sources. The as-grown thin films of single-layer MoS2 were continuous and uniform in thickness for more than 4 cm without the existence of triangular-shaped MoS2 clusters. Compared to mechanically exfoliated crystals, the as-grown single-layer MoS2 thin films possessed consistent chemical valence states and crystal structure along with strong photoluminescence emission and optical absorbance at high energy. These results demonstrate that it is possible to scale up the growth of uniform single-layer MoS2 thin films, providing potentially important implications on realizing high-performance MoS2 devices.

  16. Structural and optical studies on hot wire chemical vapour deposited hydrogenated silicon films at low substrate temperature

    Energy Technology Data Exchange (ETDEWEB)

    Gogoi, Purabi; Agarwal, Pratima [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039, Assam (India)

    2009-02-15

    Thin films of hydrogenated silicon are deposited by hot wire chemical vapour deposition technique, as an alternative of plasma enhanced chemical vapour deposition technique. By varying the hydrogen and silane flow rate, we deposited the films ranging from pure amorphous to nanocrystallite-embedded amorphous in nature. In this paper we report extensively studied structural and optical properties of these films. It is observed that the rms bond angle deviation decreases with increase in hydrogen flow rate, which is an indication of improved order in the films. We discuss this under the light of breaking of weak Si-Si bonds and subsequent formation of strong Si-Si bonds and coverage of the growing surface by atomic hydrogen. (author)

  17. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    Science.gov (United States)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  18. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

    Energy Technology Data Exchange (ETDEWEB)

    Lad, Robert J.

    1999-12-14

    This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with film microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.

  19. Metal-organic chemical vapour deposition of lithium manganese oxide thin films via single solid source precursor

    Directory of Open Access Journals (Sweden)

    Oyedotun K.O.

    2015-12-01

    Full Text Available Lithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS, UV-Vis spectrophotometry, X-ray diffraction (XRD spectroscopy, atomic force microscopy (AFM and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2 and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.

  20. Chemical Interactions and Their Role in the Microphase Separation of Block Copolymer Thin Films

    Directory of Open Access Journals (Sweden)

    Richard A. Farrell

    2009-08-01

    Full Text Available The thermodynamics of self-assembling systems are discussed in terms of the chemical interactions and the intermolecular forces between species. It is clear that there are both theoretical and practical limitations on the dimensions and the structural regularity of these systems. These considerations are made with reference to the microphase separation that occurs in block copolymer (BCP systems. BCP systems self-assemble via a thermodynamic driven process where chemical dis-affinity between the blocks driving them part is balanced by a restorative force deriving from the chemical bond between the blocks. These systems are attracting much interest because of their possible role in nanoelectronic fabrication. This form of self-assembly can obtain highly regular nanopatterns in certain circumstances where the orientation and alignment of chemically distinct blocks can be guided through molecular interactions between the polymer and the surrounding interfaces. However, for this to be possible, great care must be taken to properly engineer the interactions between the surfaces and the polymer blocks. The optimum methods of structure directing are chemical pre-patterning (defining regions on the substrate of different chemistry and graphoepitaxy (topographical alignment but both centre on generating alignment through favourable chemical interactions. As in all self-assembling systems, the problems of defect formation must be considered and the origin of defects in these systems is explored. It is argued that in these nanostructures equilibrium defects are relatively few and largely originate from kinetic effects arising during film growth. Many defects also arise from the confinement of the systems when they are ‘directed’ by topography. The potential applications of these materials in electronics are discussed.

  1. Chemical interactions and their role in the microphase separation of block copolymer thin films.

    Science.gov (United States)

    Farrell, Richard A; Fitzgerald, Thomas G; Borah, Dipu; Holmes, Justin D; Morris, Michael A

    2009-08-25

    The thermodynamics of self-assembling systems are discussed in terms of the chemical interactions and the intermolecular forces between species. It is clear that there are both theoretical and practical limitations on the dimensions and the structural regularity of these systems. These considerations are made with reference to the microphase separation that occurs in block copolymer (BCP) systems. BCP systems self-assemble via a thermodynamic driven process where chemical dis-affinity between the blocks driving them part is balanced by a restorative force deriving from the chemical bond between the blocks. These systems are attracting much interest because of their possible role in nanoelectronic fabrication. This form of self-assembly can obtain highly regular nanopatterns in certain circumstances where the orientation and alignment of chemically distinct blocks can be guided through molecular interactions between the polymer and the surrounding interfaces. However, for this to be possible, great care must be taken to properly engineer the interactions between the surfaces and the polymer blocks. The optimum methods of structure directing are chemical pre-patterning (defining regions on the substrate of different chemistry) and graphoepitaxy (topographical alignment) but both centre on generating alignment through favourable chemical interactions. As in all self-assembling systems, the problems of defect formation must be considered and the origin of defects in these systems is explored. It is argued that in these nanostructures equilibrium defects are relatively few and largely originate from kinetic effects arising during film growth. Many defects also arise from the confinement of the systems when they are 'directed' by topography. The potential applications of these materials in electronics are discussed.

  2. Photography - Determination of thiosulphate and other residual chemicals in processed photographic films, plates and papers - Methylene blue photometric method and silver sulphide densitometric method

    CERN Document Server

    International Organization for Standardization. Geneva

    1977-01-01

    Photography - Determination of thiosulphate and other residual chemicals in processed photographic films, plates and papers - Methylene blue photometric method and silver sulphide densitometric method

  3. Stable dropwise condensation for enhancing heat transfer via the initiated chemical vapor deposition (iCVD) of grafted polymer films.

    Science.gov (United States)

    Paxson, Adam T; Yagüe, Jose L; Gleason, Karen K; Varanasi, Kripa K

    2014-01-22

    Ultra-thin copolymer films are deposited by initiated chemical deposition (iCVD) to investigate their performance under the condensation of water vapor. By forming a grafted interface between the coating and the substrate, the films exhibit stable dropwise condensation even when subjected to 100 °C steam. The applicability of the iCVD to complex substrate geometries is demonstrated on a copper condenser coil.

  4. Growth of thick MgB{sub 2} films by impinging-jet hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lamborn, D.R. [Department of Chemical Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Wilke, R.H.T.; Li, Q. [Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Xi, X. [Department of Physics, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States); Snyder, D.W. [Applied Research Laboratory, The Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States)

    2008-01-18

    Thick MgB{sub 2} films are grown using a novel impinging-jet hybrid physical-chemical vapor deposition process. An increased amount of the boron source gas generates high growth rates. Superconducting properties of the thick films are comparable to previous results from other processes, which indicate that this is a promising new process for MgB{sub 2} deposition for coated conductor applications, such as wires and tapes for MRI magnets. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  5. Intertwisted fibrillar diamond-like carbon films prepared by electron cyclotron resonance microwave plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    杨武保; 王久丽; 张谷令; 范松华; 刘赤子; 杨思泽

    2003-01-01

    In this paper, the structures, optical and mechanical properties of diamond-like carbon films are studied, which are prepared by a self-fabricated electron cyclotron resonance microwave plasma chemical vapour deposition method at room temperature in the ambient gases of mixed acetylene and nitrogen. The morphology and microstructure of the processed film are characterized by the atomic force microscope image, Raman spectra and middle Fourier transform infrared transmittance spectra, which reveal that there is an intertwisted fibrillar diamond-like structure in the film and the film is mainly composed of sp3 CH, sp3 C-C, sp2 C=C, C=N and C60. The film micro-hardness and bulk modulus are measured by a nano-indenter and the refractive constant and deposition rate are also calculated.

  6. Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process

    Directory of Open Access Journals (Sweden)

    S. N. Heo

    2016-03-01

    Full Text Available We established a process for growing highly ordered MoS2 thin films. The process consists of four steps: MoO3 thermal evaporation, first annealing, sulfurization, and second annealing. The main feature of this process is that thermally deposited MoO3 thin films are employed as a precursor for the MoS2 films. The first deposition step enabled us to achieve precise control of the resulting thickness of the MoS2 films with high uniformity. The crystalline structures, surface morphologies, and chemical states at each step were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Based on these characterizations and a careful optimization of the growth conditions, we successfully produced a highly oriented MoS2 thin film with a thickness of five monolayers over an entire one-centimeter-square sapphire substrate.

  7. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Science.gov (United States)

    Tari, Alireza; Lee, Czang-Ho; Wong, William S.

    2015-07-01

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO2, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiNx, and (3) a PECVD SiOx/SiNx dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the Vo concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiNx (high Vo) and SiO2 (low Vo) had the highest and lowest conductivity, respectively. A PECVD SiOx/SiNx dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  8. Composition and morphological characteristics of chemically sprayed fluorine-doped zinc oxide thin films deposited on Si(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Castaneda, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510 D. F. (Mexico); Departamento de Fisica y Matematicas, Division de Ciencia, Arte y Tecnologia, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D. F. (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Apartado Postal 14740, Mexico, D.F. 07000 (Mexico); Cheang-Wong, J.C. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Apartado Postal 20-364, Mexico, D.F. 01000 (Mexico); Terrones, M. [Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas, 4a. seccion, San Luis Potosi, 78216 (Mexico); Departamento de Fisica y Matematicas, Division de Ciencia, Arte y Tecnologia, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D. F. (Mexico); Olvera, M. de la L [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Apartado Postal 14740, Mexico, D.F. 07000 (Mexico)]. E-mail: molvera@cinvestav.mx

    2007-03-01

    Fluorine-doped zinc oxide thin films (ZnO:F) were deposited on Si(1 0 0) substrates by the chemical spray technique (CST) from an aged-solution. The effect of the substrate temperature on the morphology and composition of the ZnO:F thin films was studied. The films were polycrystalline, with a preferential growth along the ZnO (0 0 2) plane, irrespective of the deposition temperature. The average crystal size within the films was ca. 35 nm and the morphology of the surface was found to be dependent on the substrate temperature. At low substrate temperatures irregular-shaped grains were observed, whereas at higher temperatures uniform flat grains were obtained. Elemental analysis showed that the composition of the films is close to stoichiometric ZnO and that samples contain quite a low fluorine concentration, which decreases as a function of the deposition temperature.

  9. Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Rekha, E-mail: rekha.mittal07@gmail.com; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

    2016-05-06

    Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

  10. Dynamic scaling and optical properties of Zn(S, O,OH) thin film grown by chemical bath deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Yi; Li Bo-Yan; Dang Xiang-Yu; Wu Li; Jin Jing; Li Feng-Yan; Ao Jian-Ping; Sun Yun

    2011-01-01

    The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.From the scaling behaviour,the value of growth scaling exponent β,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.

  11. Study on Physical and Chemical Behaviors of Rare Earths in Preparing Ceramic Tube Supported Palladium Film by Electroless Plating

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The rare earths of ytterbium, lanthanum, praseodymium, neodymium and their binary mixtures were respectively added into the traditional electroless plating solution to prepare thin palladium film on the inner surface of porous ceramic tube. The experimental results shows that the addition of rare earths increases palladium deposition rates and the binary mixtures are superior to the single rare earths and the mixture of ytterbium-lanthanum is the most efficient. Adding the mixture of ytterbium-lanthanum can also reduce the plating temperature by 10~20 ℃, shrink the metal crystal size and improve the film densification compared to those by traditional electroless plating. A thin palladium film with 5 μm was prepared and the film made a highly pure hydrogen with a molar fraction of more than 99.97% from a H2-N2 gas mixture. More attentions were paid to analyze the physical and chemical behaviors of the rare earths in palladium film preparation.

  12. Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

    Energy Technology Data Exchange (ETDEWEB)

    Murali, K.V., E-mail: kvmuralikv@gmail.com [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Ragina, A.J. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Preetha, K.C. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Sree Narayana College, Kannur, Kerala 670007 (India); Deepa, K.; Remadevi, T.L. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Pazhassi Raja N.S.S. College, Mattannur, Kerala 670702 (India)

    2013-09-01

    Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup −1} Ω cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

  13. Role of the buffer solution in the chemical deposition of CdS films for CIGS solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sooho; Kim, Donguk; Baek, Dohyun; Hong, Byoungyou; Yi, Junsin; Lee, Jaehyeong [Sungkyunkwan University, Suwon (Korea, Republic of); Park, Yongseob [Chosun College of Science and and Technology, Gwangju (Korea, Republic of); Choi, Wonseok [Hanbat National University, Daejeon (Korea, Republic of)

    2014-05-15

    In this work, the effects of NH{sub 4}Ac on the structural and the electro-optical properties of CdS films were investigated. CdS thin films were deposited on soda-lime glass and indium-tin-oxide (ITO) coated glass from a chemical bath containing 0.025 M cadmium acetate, 0 M ∼ 0.2 M ammonium acetate, 0.5 M thiourea, and ammonia. Cadmium acetate was the cadmium source, ammonium acetate served as a buffer, ammonia was the complexing agent, and thiourea was the source of sulfur. A commonly- available chemical bath deposition system was successfully modified to obtain precise control over the pH of the solution at 75 .deg. C during the deposition. Chemically deposited CdS films were studied by using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), optical transmittance, and electrical resistivity measurements.

  14. Thin film chemical sensors based on chalcogenide glasses for ''electronic tongue'' application

    Energy Technology Data Exchange (ETDEWEB)

    Mourzina, Yu.; Legin, A.V.; Vlasov, Yu.G. [Sankt-Peterburgskij Univ., St. Petersburg (Russian Federation). Kafedra Khimii; Schoening, M.J. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz]|[Univ. of Applied Sciences Aachen, Juelich (Germany); Schubert, J.; Zander, W.; Lueth, H. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz

    2001-07-01

    A novel thin film preparation method, a pulsed laser deposition (PLD) technique, has been used in the present investigation to realise thin film chalcogenide layers for chemical sensor membranes. This technique is compatible with silicon technology and was aimed at fabrication of primary devices for analytical microsystems for the needs of fast analysis and in-situ measurements. The combination of the new type of the potentiometric thin film sensor array based on chalcogenide glass materials and artificial neural network for the experimental data processing is also presented. (orig.)

  15. Influence of the chemical composition and the surface structure imperfection of metal substrates on the zeolite film formation

    Energy Technology Data Exchange (ETDEWEB)

    Valtchev, V.; Mintova, S. [Institute of Applied Mineralogy, Sofia (Bulgaria)

    1995-12-01

    There are several attractive features of zeolites that make-them useful in designing molecular thin films, coatings and membranes. Metal supports axe especially convenient for zeolite containing composite materials due to their high thermal stability, acid resistance and the possibility to form micropore modules of an arbitrary shape. There axe, however, no systematic studies on the effect of the substrate chemical composition and surface structure imperfections on the zeolite film formation. This study is concerned with: (1) the effect of the metal substrate and surface imperfections on the process of film formation; (2) the effect of the surface pretreatment.

  16. Effect of acetylene flow rate on morphology and structure of carbon nanotube thick films grown by thermal chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    CAO Zhangyi; SUN Zhuo; GUO Pingsheng; CHEN Yiwei

    2007-01-01

    Carbon nanotube (CNT) films were grown on nickel foil substrates by thermal chemical vapor deposition (CVD) with acetylene and hydrogen as the precursors. The morphology and structure of CNTs depending on the acetylene flow rate were characterized by a scanning electron microscope (SEM),a transmission electron microscope (TEM) and a Raman spectrometer,respectively.The effect of acetylene flow rate on the morphology and structure of CNT films was investigated.By increasing the acetylene flow rate from 10 to 90 sccm (standard cubic centimeter perminute),the yield and the diameter of CNTs increase.Also, the defects and amorphous phase in CNT films increase with increasing acetylene flow rate.

  17. PENGARUH TEMPERATUR DEPOSISI PADA PENUMBUHAN FILM TIPIS SILIKON KARBIDA DENGAN METODE HOMEMADE HOT-MESH CHEMICAL VAPOR DEPOSITION

    Directory of Open Access Journals (Sweden)

    B Astuti

    2016-03-01

    Full Text Available Film tipis silikon karbida (SiC telah ditumbuhkan di atas substrate graphene/SiO2/Si dengan metode Homemade Hot-mesh chemical vapor deposition (Hot-Mesh CVD. Pengaruh dari temperature deposisi pada struktur dan morfologi film tipis SiC telah dipelajari dengan menggunakan X-Ray diffractometer (XRD, FESEM dan EDX, dan spektroskopi Raman. Karakterisasi XRD menunjukkan bahwa film tipis SiC memiliki struktur polikristal tipe kubik dengan orientasi (111. Kualitas film tipis SiC, dan ukuran butir kristal dari morfologi film yang dihasilkan meningkat dengan peningkatan temperatur deposisi. Dari karakterisasi spektroskopi Raman, dapati terdapat dua puncak pergeseran Raman yang dominan pada daerah sekitar 780 - 800 cm-1 dan  950 – 980 cm-1 yang merupakan mode fonon SiC-TO dan SiC-LO. Puncak pergeseran Raman tersebut bergeser ke bilangan gelombang yang lebih pendek dengan peningkatan temperature deposisi.Silicon carbide (SiC thin film grown on graphene/SiO2/Si substrate using homemade hot mesh chemical vapor deposition (Hot-Mesh SVD method has been done. Effect of  deposition temperature on structure and morphology of the thin film was studied by using X-ray diffractometer (XRD, FESEM and EDX, and Raman spectroscopy. XRD characteristics shows that SiC thin film has cubic polycrystalline structure with (111 orientation. Quality of the SiC thin film, and crystallite grain size from the film morphology was resulted increases with the increase of the deposition temperature. Based on the characterization of Raman spectroscopy, shows that two peak Raman shift in the range of 780 - 800 cm-1 and  950 – 980 cm-1 was attributed to SiC-TO and SiC-LO phonon mode.  The Raman shift peak was shifted toward the lower wavenumber with the increase of deposition temperature.

  18. PENGARUH TEMPERATUR DEPOSISI PADA PENUMBUHAN FILM TIPIS SILIKON KARBIDA DENGAN METODE HOMEMADE HOT-MESH CHEMICAL VAPOR DEPOSITION

    Directory of Open Access Journals (Sweden)

    B Astuti

    2016-03-01

    Full Text Available Film tipis silikon karbida (SiC telah ditumbuhkan di atas substrate graphene/SiO2/Si dengan metode Homemade Hot-mesh chemical vapor deposition (Hot-Mesh CVD. Pengaruh dari temperature deposisi pada struktur dan morfologi film tipis SiC telah dipelajari dengan menggunakan X-Ray diffractometer (XRD, FESEM dan EDX, dan spektroskopi Raman. Karakterisasi XRD menunjukkan bahwa film tipis SiC memiliki struktur polikristal tipe kubik dengan orientasi (111. Kualitas film tipis SiC, dan ukuran butir kristal dari morfologi film yang dihasilkan meningkat dengan peningkatan temperatur deposisi. Dari karakterisasi spektroskopi Raman, dapati terdapat dua puncak pergeseran Raman yang dominan pada daerah sekitar 780 - 800 cm-1 dan  950 – 980 cm-1 yang merupakan mode fonon SiC-TO dan SiC-LO. Puncak pergeseran Raman tersebut bergeser ke bilangan gelombang yang lebih pendek dengan peningkatan temperature deposisi.Silicon carbide (SiC thin film grown on graphene/SiO2/Si substrate using homemade hot mesh chemical vapor deposition (Hot-Mesh SVD method has been done. Effect of  deposition temperature on structure and morphology of the thin film was studied by using X-ray diffractometer (XRD, FESEM and EDX, and Raman spectroscopy. XRD characteristics shows that SiC thin film has cubic polycrystalline structure with (111 orientation. Quality of the SiC thin film, and crystallite grain size from the film morphology was resulted increases with the increase of the deposition temperature. Based on the characterization of Raman spectroscopy, shows that two peak Raman shift in the range of 780 - 800 cm-1 and  950 – 980 cm-1 was attributed to SiC-TO and SiC-LO phonon mode.  The Raman shift peak was shifted toward the lower wavenumber with the increase of deposition temperature.

  19. A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2015-03-01

    Full Text Available The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H thin film transistors (TFTs has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD and hot-wire chemical vapor deposition (HW-CVD at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50% can be deposited by HW-CVD all the way down to room temperature.

  20. Morphology and Optical Properties of Zinc Oxide Films Grown on Metal Coated Glass Substrates by Aqueous Chemical Growth

    Science.gov (United States)

    Bakar, M. A.; Hamid, M. A. A.; Jalar, A.; Shamsudin, R.

    2013-04-01

    Zinc oxide films were deposited on three different metal coated substrates (gold, nickel and platinum) by aqueous chemical growth method. This paper discusses the effect of metal coated substrates on the morphology and optical properties of grown ZnO films. X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FE-SEM) and UV-visible spectroscopy (UV-vis) were employed to characterize the samples. All the as-deposited ZnO films exhibit crystalline hexagonal wurzite structure. The crystallite size of the ZnO films were in the range of 29 to 32 nm. FESEM micrographs revealed hexagonal rod, oval-like and flower-like ZnO structures formed on all metal coated substrates. The Pt coated film contains higher density hexagonal rod as compared to others metal coated substrate. Most probably the Pt lattice parameter is the nearest to ZnO compared to nickel and gold. The optical band gap energy, Eg of ZnO films were estimated to be 3.30 eV which is near to bulk Eg, 3.37 eV. This indicates that the ZnO grown by aqueous chemical growth is able to produce similar quality properties to other conventional method either films or bulk size.

  1. Effect of applied dc bias voltage on composition, chemical bonding and mechanical properties of carbon nitride films prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    LI Hong-xuan; XU Tao; HAO Jun-ying; CHEN Jian-min; ZHOU Hui-di; XUE Qun-ji; LIU Hui-wen

    2004-01-01

    Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.

  2. Impact of In doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process

    Science.gov (United States)

    Szkutnik, P. D.; Aoukar, M.; Todorova, V.; Angélidès, L.; Pelissier, B.; Jourde, D.; Michallon, P.; Vallée, C.; Noé, P.

    2017-03-01

    We investigated the deposition and the phase-change properties of In-doped GeTe thin films obtained by plasma enhanced metalorganic chemical vapor deposition and doped with indium using a solid delivery system. The sublimated indium precursor flow rate was calculated as a function of sublimation and deposition parameters. Indium related optical emission recorded by means of optical emission spectroscopy during deposition plasma allowed proposing the dissociation mechanisms of the [In(CH3)2N(CH3)2]2 solid precursor. In particular, using an Ar + H2 + NH3 deposition plasma, sublimated indium molecules are completely dissociated and do not induce by-product contamination by addition of nitrogen or carbon in the films. X-ray photoelectron spectroscopy evidences the formation of In-Te bonds in amorphous as-deposited In-doped GeTe films. The formation of an InTe phase after 400 °C annealing is also evidenced by means of X-ray diffraction analysis. The crystallization temperature Tx, deduced from monitoring of optical reflectivity of In-doped GeTe films with doping up to 11 at. % slightly varies as a function of the In dopant level with a decrease of Tx down to a minimum value for an In doping level of about 6-8 at. %. In this In doping range, the structure of crystallized In-GeTe films changes and is dominated by the presence of a crystalline In2Te3 phase. Finally, the Kissinger activation energy for crystallization Ea is showing to monotonically decrease as the indium content in the GeTe film is increased indicating a promising effect of In doping on crystallization speed in memory devices while keeping a good thermal stability for data retention.

  3. Chemical vapour deposition of tungsten oxide thin films from single-source precursors

    Science.gov (United States)

    Cross, Warren Bradley

    This thesis describes the chemical vapour deposition (CVD) of tungsten oxide thin films on glass from a wide range of single-source precursors. Chapter 1 describes previous work that has motivated this research. Chapter 2 discusses the synthesis of conventional style candidates for single-source precursors. Reactions of WOCl4 with 3-methyl salicylic acid (MesaliH2) and 3,5-di-iso-propyl salicylic acid (di-i-PrsaliH2) yielded the ditungsten complexes [WO(Mesali)(MesaliH)2(mu-O)], 1, and [WO(di-i-Prsali)(di-i-PrsaliH)2(mu-O)], 2, and the monotungsten complex [WO(di-i-Pr sali)(di-i-PrsaliH)Cl], 3. Tungsten(VI) dioxo complexes were prepared by ligand exchange reactions of [WO2(acac)2], 4, yielding [WO2(catH)2], 5, and [WO2(malt)2], 6, (catH2 = 3,5-di-tert-butyl-catechol; maltH = maltol). Chapter 3 describes thermal analyses of the complexes 1 - 6 and tungsten hexaphenoxide, and consequently their suitability for CVD. The use of [W(OPh)6] and 2 - 6 in aerosol assisted CVD is reported in Chapter 4. Brown tungsten oxide was deposited from 2 and 3 at 600 °C; blue partially-reduced WO3-x thin films were deposited from [W(OPh)6] from 300 to 500 °C, from 4 at 600 °C and 6 at 620 °C. Sintering all of the coatings in air at 550 °C afforded yellow films of stoichiometric WO3. Raman spectroscopy and glancing angle XRD showed that coatings deposited from [W(OPh)6] at 300 °C were amorphous, whereas all the other films were the monoclinic phase gamma-tungsten oxide. Taking full advantage of the aerosol vaporisation technique led to the CVD of tungsten oxide films from polyoxometalate single-source precursors, as described in Chapter 5. The isopolyanion [nBu4N]2[W6O19], 7, afforded WO3 at 410 °C; the heteropolyanions [nBu4N]4H3[PW11O39], 8, and [nBu4N]4[PNbW11O40], 9, were used to deposit doped WO3 thin films in a highly-controlled manner at 480 °C. Thus, the unprecedented use of large, charged clusters for CVD was demonstrated. Chapter 6 describes investigations of the

  4. Amorphous thin films for solar cell application. Final technical report, March 15, 1979-February 29, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Jonath, A D; Anderson, W W; Crowley, J L; MacMillan, H F; Junga, F A; Knudsen, J F; Monahan, K M; Thornton, J A

    1980-03-01

    Magnetron sputtering, a deposition method in which magnetic confinement of a plasma encourages high deposition rates at low working gas partial pressures, is under investigation in this program as a candidate production technology for large-scale manufacture of high-efficiency, thin-film amorphous silicon solar photovoltaic cells. The approach uses two dc magnetron geometries: (1) a low-cost planar magnetron (PM) system for exploratory and detailed examination of deposition parameter space; and (2) a cylindrical magnetron (CM) system, scalable to production sizes, for deposition of homogeneous films over large areas. Detailed descriptions of these two systems are included. During this first-year effort, amorphous silicon films and device structures were sputtered in both PM and CM systems under a wide range of deposition conditions (i.e., T/sub s/, P/sub Ar/, P/sub H/sub 2//) using both doped and undoped sputter targets. Measured electrical and optical film properties indicate that control over a wide range of conductivity, photoconductivity, conductivity activation energy, and optical and infrared absorption behavior is achievable. Multiple depositions to fabricate simple MIS device structures and simultaneously to deposit monitor samples of individual constituent layers have been successful. Other program highlights are: (1) deposition rates as great as 1500 A/min were achieved in high-power dc magnetron operation at practical substrate-target spacings; (2) p-type and n-type a-Si:H consistently deposited from p- and n-type targets, respectively; (3) demonstrated correlation of argon and hydrogen partial pressure variations with optical, electronic, and structural properties of magnetron-sputtered a-Si:H films; and (4) initial depositions have achieved properties comparable to those in films made by rf sputtering and glow-discharge methods.

  5. Tuning anomalous Hall conductivity in L1[sub 0] FePt films by long range chemical ordering

    KAUST Repository

    Chen, M.

    2011-02-24

    For L10 FePt films, the anomalous Hall conductivity σ xy=-a σxx-b, where a=a0f(T), b=b 0f(T), and f (T) is the temperature dependence factor of the spontaneous magnetization. With increasing chemical long range ordering S, a0 changes its sign accompanied by a reduction of its magnitude and b0 increases monotonically. The spin-orbit coupling strength is suggested to increase with increasing S. As an approach, the long range chemical ordering can be used to control the anomalous Hall effect in ferromagnetic alloy films. © 2011 American Institute of Physics.

  6. Selective-Area Growth of Thick Diamond Films Using Chemically Stable Masks of Ru/Au and Mo/Au

    Science.gov (United States)

    Nagase, Masanori; Watanabe, Katsumi; Umezawa, Hitoshi; Shikata, Shinichi

    2012-07-01

    Selective-area growth of diamond films in microwave-plasma chemical vapor deposition was performed using newly developed masks. By forming chemically stable masks made of Ru/Au or Mo/Au, which have high melting points, good adhesion to diamond, and difficulty in forming carbide compounds, patterned diamond films with a large thickness of 50 µm, a large area of 5 mm2, and a high orientation in the [001] direction were successfully grown on (001) diamond substrates without degradation of the crystal quality of masked areas.

  7. Photoinitiated chemical vapor deposition of polymeric thin films using a volatile photoinitiator.

    Science.gov (United States)

    Chan, Kelvin; Gleason, Karen K

    2005-12-06

    Photoinitiated chemical vapor deposition (piCVD) is an evolutionary CVD technique for depositing polymeric thin films in one step without using any solvents. The technique requires no pre- or post-treatment and uses a volatile photoinitiator to initiate free-radical polymerization of gaseous monomers under UV irradiation. Glycidyl methacrylate (GMA) was used as a test monomer for its ability to undergo free-radical polymerization, and 2,2'-azobis(2-methylpropane) (ABMP) was used as the photoinitiator, as it is known to produce radicals when excited by photons. GMA and ABMP vapors were fed into a vacuum chamber in which film growth was observed on a substrate exposed to UV irradiation. The resulting poly(glycidyl methacrylate) (PGMA) thin films were comprised of linear chains and had high structural resemblance to conventionally polymerized PGMA, as shown by the high solubility in tetrahydrofuran and the infrared and X-ray photoelectron spectroscopy measurements. The introduction of ABMP into the vacuum chamber significantly increased growth rates. The maximum growth rate achieved was approximately 140 nm/min and represents a 7-fold enhancement over the case without ABMP. The molecular weight was found to increase with increasing monomer-to-initiator (M/I) feed ratio, and the polydispersity indexes (PDIs) of the samples were between 1.8 and 2.2, lower than the values obtained in conventional batch polymerization but in agreement with the theoretical expressions developed for low-conversion solution-phase polymerization, which are applicable to continuous processes such as piCVD. Molecular-weight distributions can be narrowed by filtering out wavelengths shorter than 300 nm, which induce branching and/or cross-linking. The strong dependence of the molecular weight on the M/I ratio, the rate enhancement due to the use of a radical photoinitiator, the good agreement between the experimental, and the theoretical PDIs provide evidence of a free-radical mechanism in pi

  8. Novel wide band gap materials for highly efficient thin film tandem solar cells. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Hardin, Brian E.; Connor, Stephen T.; Peters, Craig H.

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949 mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV's goal in Phase I of the DOE SBIR was to (1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and (2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS

  9. Structural and optical studied of nano structured lead sulfide thin films prepared by the chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Al Din, Nasser Saad, E-mail: nsaadaldin@yahoo.com; Hussain, Nabiha, E-mail: nabihahssin@yahoo.com [Damascus University Faculty of Science, Department of physics, Homs (Syrian Arab Republic); Jandow, Nidhal, E-mail: nidhaljandow@yahoo.com [Al –Mustansiriyah University, College of Education, Department of physics, Baghdad (Iraq)

    2016-07-25

    Lead (II) Sulfide PbS thin films were deposited on glass substrates at 25°C by chemical bath deposition (CBD) method. The structural properties of the films were studied as a function of the concentration of Thiourea (CS (NH{sub 2}){sub 2}) as Source of Sulfide and deposition time. The surface morphology of the films was characterized by X-ray diffraction and SEM. The obtained results showed that the as-deposited films Polycrystalline had cubic crystalline phase that belong to S.G: Fm3m. We found that they have preferred orientation [200]. Also the thickness of thin films decrease with deposition time after certain value and, it observed free sulfide had orthorhombic phase. Optical properties showed that the thin films have high transmission at visible range and low transmission at UV, IR range. The films of PbS have direct band gap (I.68 - 2.32 ev) at 300 K the values of band energy decreases with increases thickness of the Lead (II) Sulfide films.

  10. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    Science.gov (United States)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  11. Selective adhesion of intestinal epithelial cells on patterned films with amine functionalities formed by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyung Seop; Choi, Changrok; Kim, Soo Heon; Choi, Kun oh [Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Jeong Min [Department of Molecular Biology and Institute of Nanosensor and Biotechnology, BK21 Graduate Program for RNA Biology, Dankook University, Yongin 448-701 (Korea, Republic of); Kim, Hong Ja [Department of Internal Medicine, Dankook University College of Medicine, Cheonan 330-715 (Korea, Republic of); Yeo, Sanghak [R and D Center, ELBIO Incorporation, 426-5 Gasan-dong Geumchun-gu, Seoul (Korea, Republic of); Park, Heonyong [Department of Molecular Biology and Institute of Nanosensor and Biotechnology, BK21 Graduate Program for RNA Biology, Dankook University, Yongin 448-701 (Korea, Republic of); Jung, Donggeun, E-mail: djung@skku.ac.kr [Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2010-11-01

    Control of cell adhesion to surfaces is important to develop analytical tools in the areas of biomedical engineering. To control cell adhesiveness of the surface, we constructed a variety of plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films deposited at the plasma power range of 10-100 W by plasma enhanced chemical vapor deposition (PECVD). The PPHMDSO film that was formed at 10 W was revealed to be resistant to cell adhesion. The resistance to cell adhesion is closely related to physicochemical properties of the film. Atomic force microscopic data show an increase in surface roughness from 0.52 nm to 0.74 nm with increasing plasma power. From Fourier transform infrared (FT-IR) absorption spectroscopy data, it was also determined that the methyl (-CH{sub 3}) peak intensity increases with increasing plasma power, whereas the hydroxyl (-OH) peak decreases. X-ray photoelectron spectroscopy data reveal an increase in C-O bonding with increasing plasma power. These results suggest that C-O bonding and hydroxyl (-OH) and methyl (-CH{sub 3}) functional groups play a critical part in cell adhesion. Furthermore, to enhance a diversity of film surface, we accumulated the patterned plasma polymerized ethylenediamine (PPEDA) thin film on the top of the PPHMDSO thin film. The PPEDA film is established to be strongly cell-adherent. This patterned two-layer film stacking method can be used to form the selectively limited cell-adhesive PPEDA spots over the adhesion-resistant surface.

  12. Effect of Solution Spray Rate on the Properties of Chemically Sprayed ZnO:In Thin Films

    Directory of Open Access Journals (Sweden)

    Merike Kriisa

    2013-01-01

    Full Text Available ZnO:In thin films were grown from 100 mL of spray solution on glass substrates by chemical spray at Ts=400°C using solution spray rates of 0.5–6.7 mL/min. Zinc acetate and indium(IIIchloride were used as Zn and In sources, respectively, with [In]/[Zn] = 3 at.%. Independent of solution spray rate, the crystallites in ZnO:In films grow preferentially in the (101 plane parallel to the substrate. The solution spray rate influences the surface morphology, grain size, film thickness, and electrical and optical properties. According to SEM and AFM studies, sharp-edged pyramidal grains and canvas-resembling surfaces are characteristic of films grown at spray rates of 0.5 and 3.3 mL/min, respectively. To obtain films with comparable film thickness and grain size, more spray solution should be used at low spray rates. The electrical resistivity of sprayed ZnO:In films is controlled by the solution spray rate. The carrier concentration increases from 2·1019 cm−3 to 1·1020 cm−3 when spray rate is increased from 0.5 mL/min to 3.3 mL/min independent of the film thickness; the carrier mobilities are always lower in slowly grown films. Sprayed ZnO:In films transmit 75–80% of the visible light while the increase in solution spray rate from 0.5 mL/min to 3.3 mL/min decreases the transmittance in the NIR region and increases the band gap in accordance with the increase in carrier concentration. Lower carrier concentration in slowly sprayed films is likely due to the indium oxidation.

  13. Robust, functionalizable, nanometer-thick poly(acrylic acid) films spontaneously assembled on oxidized aluminum substrates: structures and chemical properties.

    Science.gov (United States)

    Koo, Eunhae; Yoon, Sungho; Atre, Sundar V; Allara, David L

    2011-04-05

    Immersion of oxidized aluminum substrates in ethanol solutions of poly(acrylic acid) (PAA), followed by extensive solvent immersion, results in tenaciously chemisorbed, nanometer scale, controllable thickness films for a wide range of solution concentrations and molecular weights. Atomic force microscope images reveal isolated polymer globules from adsorption in low-concentration solutions with crossover to conformal, highly uniform, nanometer-thickness films at higher concentrations, an indication that the chemisorbing chains start to overlap and trap underlying segments to form planar chemisorbed films only two or three chains in thickness. Quantitative IR reflection spectroscopy in combination with chemical derivitization on a standard set of 1.0(±0.2) nm thick films reveals a film structure with 5.5(±1) chemisorbed -CO(-)(2) groups/nm(2) and 6.3 unattached -CO(2)H groups/nm(2), with up to ∼3.6/nm(2) available for chemical derivitization, a comparable number to typical self-assembled monolayer coverages of ∼4-5 molecules/nm(2). Thermal treatment of the ∼1 nm chemisorbed films, at even extreme temperatures of ∼150 °C, results in almost no anhydride formation via adjacent -CO(2)H condensation, in strong contrast to bulk PAA, a clear indication that the films have a frozen glass structure with effectively no segment and side group mobility. Overall, these results demonstrate that these limiting thickness nanometer films provide a model surface for understanding the behavior of strongly bound polymer chains at substrates and show potential as a path to creating highly stable, chemically functionalized inorganic substrates with highly variable surface properties.

  14. 76 FR 9753 - Polyethylene Terephthalate Film, Sheet, and Strip From the People's Republic of China: Final...

    Science.gov (United States)

    2011-02-22

    ... Xiangyu Green Packing Co., Ltd. (``Green Packing''), and Tianjin Wanhua Co., Ltd. (``Wanhua... an error, as the Department had actually averaged all tax-exclusive rates for electricity for small... mandatory respondents, Fuwei Films and Green Packing, have estimated weighted-average dumping margins...

  15. Hot-wire chemical vapor deposition of WO{sub 3−x} thin films of various oxygen contents

    Energy Technology Data Exchange (ETDEWEB)

    Houweling, Z. Silvester, E-mail: Silvester.Houweling@asml.com [Section Nanophotonics – Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CC Utrecht (Netherlands); Geus, John W. [Inorganic Chemistry and Catalysis, Utrecht University, Padualaan 8, 3584 CH Utrecht (Netherlands); Schropp, Ruud E.I. [Section Nanophotonics – Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CC Utrecht (Netherlands)

    2013-06-15

    We present the synthesis of tungsten oxide (WO{sub 3−x}) thin films consisting of layers of varying oxygen content. Configurations of layered thin films comprised of W, W/WO{sub 3−x}, WO{sub 3}/W and WO{sub 3}/W/WO{sub 3−x} are obtained in a single continuous hot-wire chemical vapor deposition process using only ambient air and hydrogen. The air oxidizes resistively heated tungsten filaments and produces the tungsten oxide species, which deposit on a substrate and are subsequently reduced by the hydrogen. The reduction of tungsten oxides to oxides of lower oxygen content (suboxides) depends on the local water vapor pressure and temperature. In this work, the substrate temperature is either below 250 °C or is kept at 750 °C. A number of films are synthesized using a combined air/hydrogen flow at various total process pressures. Rutherford backscattering spectrometry is employed to measure the number of tungsten and oxygen atoms deposited, revealing the average atomic compositions and the oxygen profiles of the films. High-resolution scanning electron microscopy is performed to measure the physical thicknesses and display the internal morphologies of the films. The chemical structure and crystallinity are investigated with Raman spectroscopy and X-ray diffraction, respectively. - Highlights: • Synthesis of tungsten oxide thin films of controllable oxygen content. • Partial reduction of WO{sub 3−x} thin films during deposition. • Deposition of layered films with configurations of W, W/WO{sub 3−x}, WO{sub 3}/W/WO{sub 3−x}. • Synthesis of WO{sub 3−x} films with atomic oxygen-to-tungsten ratios between 0.3 and 3.

  16. Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

    Science.gov (United States)

    Starschich, S.; Griesche, D.; Schneller, T.; Waser, R.; Böttger, U.

    2014-05-01

    Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm2. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO2.

  17. MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    MA ZHI-XUN; LIAO XIAN-BO; KONG GUANG-LIN; CHU JUN-HAO

    2000-01-01

    The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx :H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

  18. New Hydrodynamic Electrochemical Arrangement for Cadmium Ions Detection Using Thick-Film Chemical Sensor Electrodes

    Directory of Open Access Journals (Sweden)

    Rene Kizek

    2006-11-01

    Full Text Available Miniaturization and integration of chemical devices into modules that aredimensionally comparable with electronic chips (Lab on Chip is nowadays developingworldwide. The aim of our work was to suggest and optimize the best conditions forfabrication of TFT sensor due to its sensitivity and low experimental deviations. Newelectrochemical analytical device was developed to ensure certain known mass transport toelectrodes, which is the most limiting process that influencing the response quality of thesensor. The device consists from rotating conic vessel for measured sample and stick-inthick-film sensor. The sensors responses were tested under trace analysis of cadmium.Measurements were done also with the others electrochemical arrangements to comparewith the new one. The sensor output current response dependence on the liquid velocity andgeometrical arrangement within using standard electrochemical couple of potassiumferrocyanide-ferricyanide is presented. We found out that the new device with controlledflow of electrolyte to sensor worked properly and gave satisfactory results.

  19. Chemically modified STM tips for atomic-resolution imaging of ultrathin NaCI films

    Institute of Scientific and Technical Information of China (English)

    Zhe Li[1; Koen Schouteden[1; Violeta lancu[1; Ewald Janssens[1; Peter Lievens[1; Chris Van Haesendonck[1; Jorge I. Cerda[2

    2015-01-01

    Cl-functionalized scanning tunneling microscopy (STM) tips are fabricated by modifying a tungsten STM tip in situ on islands of ultrathin NaCI(100) films on Au(111) surfaces. The functionalized tips are used to achieve clear atomic- resolution imaging of NaCI(100) islands. In comparison with bare metal tips, the chemically modified tips yield drastically enhanced spatial resolution as well as contrast reversal in STM topographs, implying that Na atoms, rather than C1 atoms, are imaged as protrusions. STM simulations based on a Green's function formalism reveal that the experimentally observed contrast reversal in the STM topographs is due to the highly localized character of the Cl-pz states at the tip apex. An additional remarkable characteristic of the modified tips is that in dI/dV maps, a Na atom appears as a ring with a diameter that depends crucially on the tip-sample distance.

  20. Chemical Bath Deposition of PbS:Hg2+ Nanocrystalline Thin Films

    Directory of Open Access Journals (Sweden)

    R. Palomino-Merino

    2013-01-01

    Full Text Available Nanocrystalline PbS thin films were prepared by Chemical Bath Deposition (CBD at 40 ± 2°C onto glass substrates and their structural and optical properties modified by in-situ doping with Hg. The morphological changes of the layers were analyzed using SEM and the X-rays spectra showing growth on the zinc blende (ZB face. The grain size determined by using X-rays spectra for undoped samples was found to be ~36 nm, whereas with the doped sample was 32–20 nm. Optical absorption spectra were used to calculate the Eg, showing a shift in the range 1.4–2.4 eV. Raman spectroscopy exhibited an absorption band ~135 cm−1 displaying only a PbS ZB structure.

  1. Composition analysis of oxide films formed on titanium surface under pulsed laser action by method of chemical thermodynamics

    Science.gov (United States)

    Ageev, E. I.; Andreeva, Ya M.; Karlagina, Yu Yu; Kolobov, Yu R.; Manokhin, S. S.; Odintsova, G. V.; Slobodov, A. A.; Veiko, V. P.

    2017-04-01

    A pulsed fiber laser with a wavelength of 1.06 µm was used to treat a commercial pure titanium surface in the air at intensities below the ablation threshold to provide oxide formation. Laser oxidation results are predicted by the chemical thermodynamic method and confirmed by experimental techniques (x-ray diffraction, energy dispersive x-ray spectroscopy). For the first time, the chemical thermodynamic method was used for determining the qualitative and quantitative phase-chemical composition of the compounds formed by a pulsed laser heating of commercial titanium in the air, and its applicability is proven. The simulation shows that multilayered composite film appears on a surface, the lower layers of which consist of Ti2O3 and TiO oxides with the addition of titanium nitride; and the thin upper layer consists of transparent titanium dioxide. Also, the chemical composition of films remains unchanged within a temperature range of 881-2000 K.

  2. An active film-coating approach to enhance chemical stability of a potent drug molecule.

    Science.gov (United States)

    Desai, Divyakant; Rao, Venkatramana; Guo, Hang; Li, Danping; Stein, Daniel; Hu, Frank Y; Kiesnowski, Chris

    2012-01-01

    Peliglitazar, a PPAR α/γ agonist, was found to undergo acid as well as base catalyzed degradation. The acid catalyzed degradation led to the formation of benzylic alcohol and glycine carbamate and the base catalyzed degradation led to formation of p-hydroxyanisole and an amine degradant. In capsule formulations, the capsules with the lowest drug-loading exhibited maximum instability even at 25 °C/60% RH storage condition. Incorporation of pH-modifiers to maintain 'micro-environmental pH' acidic did not prevent the formation of the base-catalyzed degradants. Traditional dry granulated tablet formulation which is qualitatively similar to the capsule formulations showed the presence of acid-catalyzed degradants even without the presence of an acidifying agent. On the other hand, traditional wet granulated tablet formulation showed mainly base-catalyzed degradants. Stability problems of the tablet formulation were aggravated because the potent molecule required low tablet strengths which resulted in low drug to excipient ratio. To stabilize the molecule, an active film-coating approach was explored. In this approach, the drug was sprayed with the coating material onto non-active containing tablet cores. This approach of trapping the drug particles into the coating material provided tablets with satisfactory chemical stability. The stability enhancement observed in the active coating approach is attributed to the higher drug to excipient ratio in the film coat of non-reactive coating material compared to that in the traditional dry or wet granulated formulations.

  3. Preparation of Superhydrophobic ZnO Films on Zinc Substrate by Chemical Solution Method

    Institute of Scientific and Technical Information of China (English)

    XU Wen-guo; LI Ji-hong; LU Shi-xiang; DUAN Ya-qiong; MA Cheng-xiang; SHI Xiao-feng; CHEN Yi-ling; YANG Yan-bo

    2012-01-01

    Superhydrophobic surface was prepared on the zinc substrate by chemical solution method via immersing clean pure zinc substrate into a water solution of zinc nitrate hexahydrate[Zn(NO3)2.6H2O] and hexamethylenetetraamine(C6H12N4) at 95℃ in water bath for 1.5 h,then modified with 18 alkanethiol.The best resulting surface shows superhydrophobic properties with a water contact angle of about 158° and a low water roll-off angle of around 3°.The prepared samples were characterize.d by powder X-ray diffraction(XRD),X-ray photoelectron spectroscopy (XPS),energy-dispersive X-ray spectroscopy(EDX),transmission electron microscopy(TEM),and scanning electron microscopy(SEM).SEM images of the films show that the resulting surface exhibits flower-shaped micro- and nano-structure.The surfaces of the prepared films were composed of ZnO nanorods which were wurtzite structure.The special flower-like micro- and nano-structure along with the low surface energy leads to the surface superhydrophobicity.

  4. Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

    Science.gov (United States)

    Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

    2013-08-01

    Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments.

  5. Electrical properties of GaAsN film grown by chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, K. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)], E-mail: sd05501@toyota-ti.ac.jp; Suzuki, H.; Saito, K.; Ohshita, Y.; Kojima, N.; Yamaguchi, M. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2007-12-15

    The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied, and the influence of the nitrogen-hydrogen bond (N-H) concentration on the hole concentration was investigated. The absorption peak around 936 cm{sup -1} is suggested to be the second harmonic mode of the substitutional N, N{sub As}, LVM around 469 cm{sup -1}. The absorption peak around 960 cm{sup -1} is suggested to be the wagging mode of the N-H, where the stretch mode is observed around 3098 cm{sup -1}. The hole concentration linearly increases with increasing N-H concentration, and the slope increases with increasing growth temperature. It indicates that the hole concentration in GaAsN film is determined by both the number of the N-H and unknown defect, such as impurities, vacancies, and interstitials. This defect concentration increases with increasing growth temperature, suggesting that it is determined by Arrhenius type reaction.

  6. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  7. Chemical gas sensor application of open-pore mesoporous thin films based on integrated optical polarimetric interferometry.

    Science.gov (United States)

    Qi, Zhi-Mei; Honma, Itaru; Zhou, Haoshen

    2006-02-15

    Chemical gas sensors that employ integrated optical polarimetric interferometry were fabricated by the sol-gel synthesis of transparent mesoporous thin films of TiO2-P2O5 nanocomposite on tapered layers of TiO2 sputtered on tin-diffused glass waveguides. Atomic force microscopy images of the mesoporous thin film clearly show the open pore mouths on the film surface that favor rapid diffusion and adsorption of gas-phase analytes within the entire film. Adsorption of gas and vapor induces changes (Deltan) in the refractive index of the mesoporous thin film that lead to shifts in the phase difference between the fundamental transverse electric and magnetic modes simultaneously excited in the glass waveguide via single-beam incidence. Upon exposure to NH3 gas at concentrations as low as 100 ppb in dry air at room temperature, the sensor exhibits a reversible change in the phase difference with the response and recovery times of less than 60 and 90 s, respectively. It is unexpected that the sensor is unresponsive to either NO2 or C6H6 vapor, leading to a somewhat selective sensitivity to NH3. Determination of Deltan was carried out with a combination of the experimental results and the theoretical calculations. The sensor design represents a novel, effective, and easily accessible approach to mesoporous thin-film-based integrated optical chemical sensors.

  8. Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

    Science.gov (United States)

    Park, Seungil; Parida, Bhaskar; Kim, Keunjoo

    2013-05-01

    We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures. The film samples showed the different infrared absorption spectra of 2,000 and 2,100 cm(-1), which are corresponding to the chemical bonds of SiH and SiH2, respectively. The a-Si:H sample with the relatively high silane concentration provides the absorption peak of SiH bond, but the microc-Si:H sample with the relatively low silane concentration provides the absorption peak of SiH2 bond as well as SiH bond. Furthermore, the microc-Si:H sample showed the Raman spectral shift of 520 cm(-1) for crystalline phase Si bonds as well as the 480 cm(-1) for the amorphous phase Si bonds. These bonding structures are very consistent with the further analysis of the long-wavelength photoconduction tail and the formation of nanocrystalline Si structures. The microc-Si:H thin film solar cell has the photovoltaic behavior of open circuit voltage similar to crystalline silicon thin film solar cell, indicating that microc-Si:H thin film with the mixed phase of amorphous and nanocrystalline structures show the carrier transportation through the channel of nanocrystallites.

  9. Effects of Thermal Annealing on the Optical Properties of Titanium Oxide Thin Films Prepared by Chemical Bath Deposition Technique

    Directory of Open Access Journals (Sweden)

    H.U. Igwe

    2010-08-01

    Full Text Available A titanium oxide thin film was prepared by chemical bath deposition technique, deposited on glass substrates using TiO2 and NaOH solution with triethanolamine (TEA as the complexing agent. The films w ere subjected to post deposition annealing under various temperatures, 100, 150, 200, 300 and 399ºC. The thermal treatment streamlined the properties of the oxide films. The films are transparent in the entire regions of the electromagnetic spectrum, firmly adhered to the substrate and resistant to chemicals. The transmittance is between 20 and 95% while the reflectance is between 0.95 and 1%. The band gaps obtained under various thermal treatments are between 2.50 and 3.0 ev. The refractive index is between 1.52 and 2.55. The thickness achieved is in the range of 0.12-0.14 :m.These properties of the oxide film make it suitable for application in solar cells: Liquid and solid dye-sensitized photoelectrochemical solar cells, photo induced water splitting, dye synthesized solar cells, environmental purifications, gas sensors, display devices, batteries, as well as, solar cells with an organic or inorganic extremely thin absorber. These thin films are also of interest for the photooxidation of water, photocatalysis, electro chromic devices and other uses.

  10. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  11. Formation of indium-doped zinc oxide thin films using chemical spray techniques: The importance of acetic acid content in the aerosol solution and the substrate temperature for enhancing electrical transport

    Energy Technology Data Exchange (ETDEWEB)

    Castaneda, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510, D.F. (Mexico); Departamento de Fisica y Matematicas, Division de Estudios Disciplinares, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D.F. (Mexico); Garcia-Valenzuela, A. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510, D.F. (Mexico); Zironi, E.P. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Apartado Postal 20-364, 01000, D.F. (Mexico); Canetas-Ortega, J. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Apartado Postal 20-364, 01000, D.F. (Mexico); Terrones, M. [Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas 4a. seccion, San Luis Potosi 78216 (Mexico) and Departamento de Fisica y Matematicas, Division de Estudios Disciplinares, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D.F. (Mexico)]. E-mail: mterrones@ipicyt.edu.mx; Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Ap. Postal 14740, Mexico D.F. 07000 (Mexico)

    2006-05-01

    Indium-doped zinc oxide (ZnO:In) thin films were grown on glass substrates using the chemical spray technique. The effects of the acetic acid content in the starting solution (c {sub AA}), as well as the substrate temperature (T {sub S}), were studied. Our results demonstrate that when c {sub AA} is extremely low, the resistivity values of the zinc oxide (ZnO) thin films become relatively high (in the order of 4 x 10{sup -2} {omega} cm). When the c {sub AA} is increased at a fixed temperature, the resistivity of the films decreases, reaching values as low as 4 x 10{sup -3} {omega} cm for thin films deposited at 525 deg. C. The electron mobility could also increase to a maximum value of 10.5 cm{sup 2}/(V s) for films deposited at 500 deg. C. We also observed an enhancement in the electrical transport properties of the films by varying T {sub S}; the lowest resistivity values occurred in films deposited at T {sub S} between 475 and 525 deg. C. In addition, the relative intensity of the diffraction peaks associated with the crystallographic planes is strongly affected by the c {sub AA} concentration. X-ray diffraction studies reveal the polycrystalline nature of the films exhibiting a hexagonal wurtzite type, with a preferential orientation of the film depending on the acetic acid concentration. Film morphology was also affected by varying c {sub AA}, as grains with distinct geometrical shapes were observed. Finally, the optical transmittance of all these films was found to be higher than 85%.

  12. Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Seung Wook [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Agawane, G.L.; Gang, Myeng Gil [Photonics Technology Research Institute, Department of Materials Science Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Moholkar, A.V. [Department of Physics, Shivaji University, Kolhapur 416-004 (India); Moon, Jong-Ha [Photonics Technology Research Institute, Department of Materials Science Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Kim, Jin Hyeok, E-mail: jinhyeok@chonnam.ac.kr [Photonics Technology Research Institute, Department of Materials Science Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Lee, Jeong Yong, E-mail: j.y.lee@kaist.ac.kr [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)

    2012-06-15

    Highlights: Black-Right-Pointing-Pointer Thick ZnS thin films were successfully prepared by chemical bath deposition in a basic medium using less toxic complexing agents. Black-Right-Pointing-Pointer Effect of different complexing agents such as no complexing agent, Na{sub 3}-citrate and a mixture of Na{sub 3}-citrate and EDTA on the properties of ZnS thin films was investigated. Black-Right-Pointing-Pointer ZnS thin film deposited using two complexing agent showed the outstanding characteristics as compared to those using no and one complexing agent. - Abstract: Zinc sulfide (ZnS) thin films were prepared on glass substrates by a chemical bath deposition technique using aqueous zinc acetate and thiourea solutions in a basic medium (pH {approx} 10) at 80 Degree-Sign C. The effects of different complexing agents, such as a non-complexing agent, Na{sub 3}-citrate, and a mixture of Na{sub 3}-citrate and ethylenediamine tetra-acetate (EDTA), on the structural, chemical, morphological, optical, and electrical properties of ZnS thin films were investigated. X-ray diffraction pattern showed that the ZnS thin film deposited without any complexing agent was grown on an amorphous phase. However, the ZnS thin films deposited with one or two complexing agents showed a polycrystalline hexagonal structure. No secondary phase (ZnO) was observed. X-ray photoelectron spectroscopy showed that all ZnS thin films exhibited both Zn-S and Zn-OH bindings. Field emission scanning electron microscopy (FE-SEM) images showed that ZnS thin films deposited with complexing agents had thicker thicknesses than that deposited without a complexing agent. The electrical resistivity of ZnS thin films was over 10{sup 5} {Omega} cm regardless of complexing agents. The average transmittance of the ZnS thin films deposited without a complexing agent, those with Na{sub 3}-citrate, and those with a mixture of Na{sub 3}-citrate and EDTA was approximately 85%, 65%, and 70%, respectively, while the band gap

  13. Friction Behaviors of the Hot Filament Chemical Vapor Deposition Diamond Film under Ambient Air and Water Lubricating Conditions

    Institute of Scientific and Technical Information of China (English)

    SHEN Bin; SUN Fanghong

    2009-01-01

    The friction behavior of the hot filament chemical vapor deposition(HFCVD) diamond film plays a critical role on its applications in mechanical fields and largely depends on the environment. Studies on the tribological properties of HFCVD diamond films coated on Co-cemented tungsten carbide (WC-Co) substrates are rarely reported in available literatures, especially in the water lubricating conditions. In this paper, conventional microcrystalline diamond(MCD) and fine-grained diamond(FGD) films are deposited on WC-Co substrates and their friction properties are evaluated on a reciprocating ball-on-plate tribometer, where they are brought to slide against ball-bearing steel and copper balls in dry and water lubricating conditions. Scanning electron microscopy(SEM), atomic force microscopy(AFM), surface profilometer and Raman spectroscopy are adopted to characterize as-deposited diamond films;SEM and energy dispersive X-ray(EDX) are used to investigate the worn region on the surfaces of both counterface balls and diamond films. The research results show that the friction coefficient of HFCVD diamond films always starts with a high initial value, and then gradually transits to a relative stable state. For a given counterface and a sliding condition, the FGD film presents lower stable friction coefficients by 0.02-0.03 than MCD film. The transferred materials adhered on sliding interface are supposed to have predominate effect on the friction behaviors of HFCVD diamond films. Furthermore, the effect of water lubricating on reducing friction coefficient is significant. For a given counterpart, the stable friction coefficients of MCD or FGD films reduce by about 0.07-0.08 while sliding in the water lubricating condition, relative to in dry sliding condition. This study is beneficial for widespread applications of HFCVD diamond coated mechanical components and adopting water lubricating system, replacing of oil lubricating, in a variety of mechanical processing fields to

  14. 76 FR 30910 - Polyethylene Terephthalate Film, Sheet, and Strip From India: Final Results of Countervailing...

    Science.gov (United States)

    2011-05-27

    ... final subsidy rate for the reviewed company is listed below in the section titled ``Final Results of New... SRF on February 11, 2011, requesting information about the company's shipments after the POR of PET...- denominated short-term benchmark. In the Preliminary Results we allocated loan fees due on the...

  15. Low Cost Production of Thin-Film Photovoltaic Cells Final Report

    Energy Technology Data Exchange (ETDEWEB)

    McCamy, James [PPG Industries, Inc. Glass R& D, Cheswick, PA (United States); Hung, Cheng-Hung [PPG Industries, Inc. Glass R& D, Cheswick, PA (United States); Ma, Zhixun [PPG Industries, Inc. Glass R& D, Cheswick, PA (United States)

    2015-06-04

    The objective of this project was to determine the feasibility of online deposition of the active layer for thin-film PV modules. The envisioned PV online manufacturing process has a number of discrete unit operations integrated into a single process. Demonstration of feasibility would be deemed successful with the individual demonstration of each of these unit operations and development of the integrated process was not within the scope of this phase.

  16. Chemical synthesis and characterization of hydrous tin oxide (SnO2:H2O) thin films

    Indian Academy of Sciences (India)

    S N Pusawale; P R Deshmukh; C D Lokhande

    2011-10-01

    In the present investigation, we report chemical synthesis of hydrous tin oxide (SnO2:H2O) thin films by successive ionic layer adsorption and reaction (SILAR) method at room temperature (∼300 K). The films are characterized for their structural and surface morphological properties. The formation of nanocrystalline SnO2 with porous and agglomerated particle morphology is revealed from X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies, respectively. The Fourier transform infrared spectroscopy (FTIR) study confirmed the formation of Sn–O phase and hydrous nature of the deposited film. Static water contact angle studies showed the hydrophilic nature of SnO2:H2O thin film. Electrical resistivity showed the semiconducting behaviour with room temperature electrical resistivity of 105 cm. The electrochemical properties studied in 0.5 M Na2SO4 electrolyte showed a specific capacitance of 25 F g-1 at 5 mVs-1 scan rate.

  17. Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material

    Directory of Open Access Journals (Sweden)

    Prashanta Dhoj Adhikari

    2014-01-01

    Full Text Available We report the surface functionalization of graphene films grown by chemical vapor deposition and fabrication of a hybrid material combining multi-walled carbon nanotubes and graphene (CNT–G. Amine-terminated self-assembled monolayers were prepared on graphene by the UV-modification of oxidized groups introduced onto the film surface. Amine-termination led to effective interaction with functionalized CNTs to assemble a CNT–G hybrid through covalent bonding. Characterization clearly showed no defects of the graphene film after the immobilization reaction with CNT. In addition, the hybrid graphene material revealed a distinctive CNT–G structure and p–n type electrical properties. The introduction of functional groups on the graphene film surface and fabrication of CNT–G hybrids with the present technique could provide an efficient, novel route to device fabrication.

  18. Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    陆敏; 常昕; 黎子兰; 杨志坚; 张国义; 章蓓

    2003-01-01

    High quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and threading dislocations in GaN films is studied by a scanning electron microscope (SEM) and a transmission-electron microscope (TEM). The SEM images of GaN films, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3) and molten KOH exhibit notably different, etching pit densities of 5 × 108/cm2 and 4 × 107/cm2, respectively, which probably indicate that more kinds of, etching pits were revealed when, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3). Cross section TEM of GaN films with different g vectors showed the portions of different threading dislocations. Theoretical calculation indicates that the lattice and thermal expansion coefficient mismatch may be the main origins of pure edge threading dislocations.

  19. Characterization of the ZnO thin film prepared by single source chemical vapor deposition under low vacuum condition

    Institute of Scientific and Technical Information of China (English)

    DENG; Hong(邓宏); B.; GONG; A.; J.; Petrella; J.; J.; Russell; R.; N.; Lamb

    2003-01-01

    A novel technique is developed for growing high quality ZnO thin films by means of single source chemical vapor deposition (SS CVD) under low vacuum conditions with the precursor of zinc carbamate Zn4O(CO2Net2)6. SEM, AFM and XRD studies show that the resultant thin films have high density, smooth surface, uniform polycrystalline structure and excellent c-axis orientation. XPS investigation indicates that the ZnO films are free of decomposed precursor residues in the bulk. Careful quantitative XPS analysis reveals that the ZnO films are stoichiometric with O/Zn atomic ratio very close to that of ZnO single crystal.

  20. Growth of selective tungsten films on self-aligned CoSi/sub 2/ by low pressure chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    van der Putte, P.; Sadana, D.K.; Broadbent, E.K.; Morgan, A.E.

    1986-12-22

    The selective deposition of tungsten films onto CoSi/sub 2/ and onto Co by low pressure chemical vapor deposition and their material properties have been investigated with Auger electron spectroscopy, transmission electron microscopy, and Rutherford backscattering. When using WF/sub 6/ and H/sub 2/, uniformly thick tungsten films can be deposited onto CoSi/sub 2/ without substrate alteration. In patterned structures, however, void formation was found at the perimeters of CoSi/sub 2/ contacts to silicon, indicating encroachment of WF/sub 6/ down the edge of the silicide-Si interface. In WF/sub 6/ and Ar, the film thickness was limited to 10 nm and some Si was locally consumed from the upper part of the CoSi/sub 2/ film. Transmission electron diffraction showed evidence of Co/sub 2/Si formation in these areas.

  1. Influence of air annealing on the structural, morphological, optical and electrical properties of chemically deposited ZnSe thin films

    Science.gov (United States)

    Kale, R. B.; Lokhande, C. D.

    2005-11-01

    Zinc selenide nanocrystalline thin films are grown onto amorphous glass substrate from an aqueous alkaline medium, using chemical bath deposition (CBD) method. The ZnSe thin films are annealed in air for 4 h at various temperatures and characterized by structural, morphological, optical and electrical properties. The as-deposited ZnSe film grew with nanocrystalline cubic phase alongwith some amorphous phase present in it. After annealing metastable nanocrystalline cubic phase was transformed into stable polycrystalline hexagonal phase with partial conversion of ZnSe into ZnO. The optical band gap, Eg, of as-deposited film is 2.85 eV and electrical resistivity of the order of 10 6-10 7 Ω cm. Depending upon annealing temperature, decrease up to 0.15 eV and 10 2 Ω cm were observed in the optical band gap, Eg, and electrical resistivity, respectively.

  2. Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

    Institute of Scientific and Technical Information of China (English)

    LIN Ying-Bin; ZHANG Feng-Ming; DU You-Wei; HUANG Zhi-Gao; ZHENG Jian-Guo; LU Zhi-Hai; ZOU Wen-Qin; LU Zhong-Lin; XU Jian-Ping; JI Jian-Ti; LIU Xing-Chong; WANG Jian-Feng; LV Li-Ya

    2007-01-01

    Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si (001) substrates by plasma enhanced chemical vapour deposition (PECVD). X-ray diffraction measurements reveal that the Zn1-xMnxO films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn2+ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device (SQUID) measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.

  3. 77 FR 76419 - Health and Safety Data Reporting; Addition of Certain Chemicals; Withdrawal of Final Rule

    Science.gov (United States)

    2012-12-28

    ... technical information contact: Mark Seltzer, Chemical Control Division (7405M), Office of Pollution...; telephone number: (202) 564-2901; email address: seltzer.mark@epa.gov or Mike Mattheisen, Chemical...

  4. Smart chemical sensors using ZnO semiconducting thin films for freshness detection of foods and beverages

    Science.gov (United States)

    Nanto, Hidehito; Kobayashi, Toshiki; Dougami, Naganori; Habara, Masaaki; Yamamoto, Hajime; Kusano, Eiji; Kinbara, Akira; Douguchi, Yoshiteru

    1998-07-01

    The sensitivity of the chemical sensor, based on the resistance change of Al2O3-doped and SnO2-doped ZnO (ZnO:Al and ZnO:SnO2) thin film, is studied for exposure to various gases. It is found that the ZnO:Al and ZnO:Sn thin film chemical sensor has a high sensitivity and excellent selectivity for amine (TMA and DMA) gas and ethanol gas, respectively. The ZnO:Al (5.0 wt%) thin film chemical sensor which exhibit a high sensitivity for exposure to odors from rotten sea foods, such as salmon, sea bream, oyster, squid and sardine, responds to the freshness change of these sea foods. The ZnO:SnO2 (78 wt%) thin film chemical sensor which exhibit a high sensitivity for exposure to aroma from alcohols, such as wine, Japanese sake, and whisky, responds to the freshness change of these alcohols.

  5. Chemical and radiation crosslinked polymer electrolyte membranes prepared from radiation-grafted ETFE films for DMFC applications

    Science.gov (United States)

    Chen, Jinhua; Asano, Masaharu; Yamaki, Tetsuya; Yoshida, Masaru

    To develop a highly chemically stable polymer electrolyte membrane for application in a direct methanol fuel cell (DMFC), doubly crosslinked membranes were prepared by chemical crosslinking using bifunctional monomers, such as divinylbenzene (DVB) and bis(p, p-vinyl phenyl) ethane (BVPE), and by radiation crosslinking. The membranes were prepared by grafting of m, p-methylstyrene (MeSt) and p-tert-butylstyrene (tBuSt) into poly(ethylene- co-tetrafluoroethylene) (ETFE) films and subsequent sulfonation. The effects of the DVB and BVPE crosslinkers on the grafting kinetics and the properties of the prepared membranes, such as water uptake, proton conductivity and chemical stability were investigated. Radiation crosslinking was introduced by irradiation of the ETFE base film, the grafted film or the sulfonated membrane. The membrane crosslinked by DVB and BVPE crosslinkers and post-crosslinked by γ-ray irradiation of the corresponding grafted film possessed the highest chemical stability among the prepared membranes, a significantly lower methanol permeability compared to Nafion ® membranes, and a better DMFC performance for high methanol feed concentration. Therefore, this doubly crosslinked membrane was promising for application in a DMFC where relatively high methanol concentration could be fed.

  6. Chemical and radiation crosslinked polymer electrolyte membranes prepared from radiation-grafted ETFE films for DMFC applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jinhua; Asano, Masaharu; Yamaki, Tetsuya; Yoshida, Masaru [Department of Material Development, Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

    2006-07-14

    To develop a highly chemically stable polymer electrolyte membrane for application in a direct methanol fuel cell (DMFC), doubly crosslinked membranes were prepared by chemical crosslinking using bifunctional monomers, such as divinylbenzene (DVB) and bis(p,p-vinyl phenyl) ethane (BVPE), and by radiation crosslinking. The membranes were prepared by grafting of m,p-methylstyrene (MeSt) and p-tert-butylstyrene (tBuSt) into poly(ethylene-co-tetrafluoroethylene) (ETFE) films and subsequent sulfonation. The effects of the DVB and BVPE crosslinkers on the grafting kinetics and the properties of the prepared membranes, such as water uptake, proton conductivity and chemical stability were investigated. Radiation crosslinking was introduced by irradiation of the ETFE base film, the grafted film or the sulfonated membrane. The membrane crosslinked by DVB and BVPE crosslinkers and post-crosslinked by {gamma}-ray irradiation of the corresponding grafted film possessed the highest chemical stability among the prepared membranes, a significantly lower methanol permeability compared to Nafion{sup R} membranes, and a better DMFC performance for high methanol feed concentration. Therefore, this doubly crosslinked membrane was promising for application in a DMFC where relatively high methanol concentration could be fed. (author)

  7. Magnetization distribution at the surface of Co-Cr films:magneto-optical, chemical and structural characterization

    NARCIS (Netherlands)

    Geerts, Wilhelmus Johannes Maria Arnoldu

    1992-01-01

    In magnetic high density recording media, the Wonnation is stared in the domain structure at the surface of thin films. Chemical, structural and magnetic properties at the surface plar an important role in the reading and writing process. In this thesis the results of an investigation on sputtered C

  8. Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution

    Science.gov (United States)

    Sandoval-Paz, M. G.; Rodríguez, C. A.; Porcile-Saavedra, P. F.; Trejo-Cruz, C.

    2016-07-01

    Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films.

  9. Effect of Annealing Temperature on Flowerlike Cu3BiS3 Thin Films Grown by Chemical Bath Deposition

    Science.gov (United States)

    Deshmukh, S. G.; Patel, S. J.; Patel, K. K.; Panchal, A. K.; Kheraj, Vipul

    2017-10-01

    For widespread application of thin-film photovoltaic solar cells, synthesis of inexpensive absorber material is essential. In this work, deposition of ternary Cu3BiS3 absorber material, which contains abundant and environmentally benign elements, was carried out on glass substrate. Flowerlike Cu3BiS3 thin films with nanoflakes as building block were formed on glass substrate by chemical bath deposition. These films were annealed at 573 K and 673 K in sulfur ambient for structural improvement. Their structure was characterized using Raman spectroscopy, as well as their surface morphological and optical properties. The x-ray diffraction profile of as-deposited Cu3BiS3 thin film revealed amorphous structure, which transformed to orthorhombic phase after annealing. The Raman spectrum exhibited a characteristic peak at 290 cm-1. Scanning electron microscopy of as-deposited Cu3BiS3 film confirmed formation of nanoflowers with diameter of around 1052 nm. Wettability testing of as-deposited Cu3BiS3 thin film demonstrated hydrophobic nature, which became hydrophilic after annealing. The measured ultraviolet-visible (UV-Vis) absorption spectra of the Cu3BiS3 thin films gave an absorption coefficient of 105 cm-1 and direct optical bandgap of about 1.42 eV after annealing treatment. Based on all these results, such Cu3BiS3 material may have potential applications in the photovoltaic field as an absorber layer.

  10. Atmospheric pressure chemical vapour deposition of SnSe and SnSe{sub 2} thin films on glass

    Energy Technology Data Exchange (ETDEWEB)

    Boscher, Nicolas D.; Carmalt, Claire J.; Palgrave, Robert G. [Department of Chemistry, University College London, 20 Gordon Street, London, WC1H OAJ (United Kingdom); Parkin, Ivan P. [Department of Chemistry, University College London, 20 Gordon Street, London, WC1H OAJ (United Kingdom)], E-mail: i.p.parkin@ucl.ac.uk

    2008-06-02

    Atmospheric pressure chemical vapour deposition of tin monoselenide and tin diselenide films on glass substrate was achieved by reaction of diethyl selenide with tin tetrachloride at 350-650 {sup o}C. X-ray diffraction showed that all the films were crystalline and matched the reported pattern for SnSe and/or SnSe{sub 2}. Wavelength dispersive analysis by X-rays show a variable Sn:Se ratio from 1:1 to 1:2 depending on conditions. The deposition temperature, flow rates and position on the substrate determined whether mixed SnSe-SnSe{sub 2}, pure SnSe or pure SnSe{sub 2} thin films could be obtained. SnSe films were obtained at 650 {sup o}C with a SnCl{sub 4} to Et{sub 2}Se ratio greater than 10. The SnSe films were silver-black in appearance and adhesive. SnSe{sub 2} films were obtained at 600-650 {sup o}C they had a black appearance and were composed of 10 to 80 {mu}m sized adherent crystals. Films of SnSe only 100 nm thick showed complete absorbtion at 300-1100 nm.

  11. The incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Salauen, A., E-mail: amelie.salaun@tyndall.i [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Hamilton, J.A.; Iacopino, D. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Newcomb, S.B. [Glebe Scientific Ltd., Newport, County Tipperary (Ireland); Nolan, M.G.; Padmanabhan, S.C.; Povey, I.M.; Salauen, M.; Pemble, M.E. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)

    2010-09-30

    The feasibility of Aerosol Assisted Chemical Vapour Deposition (AA-CVD) has been investigated for the growth of zinc oxide (ZnO) films containing preformed metal nanoparticles. The deposition parameters were first established for ZnO thin films, by varying the heating configuration, substrate temperature and deposition time. Films were characterised using Scanning Electron Microscopy and X-Ray Diffraction. As-deposited films, grown at 250 {sup o}C, were mostly amorphous and transformed to highly crystalline Wurtzite ZnO at higher substrate temperatures (400-450 {sup o}C). A change in the preferential orientation of the films was observed upon changing (i), the substrate temperature or (ii), the heating configuration. Following this, the applicability of the AA-CVD process for the incorporation of preformed nanoparticles (platinum and gold) in ZnO thin films was investigated. It was found that surface agglomeration occurred, such that the ZnO films were capped with an inhomogeneous coverage of the metal. These layers were characterised using Transmission Electron Microscopy and Electron Diffraction. A possible mechanism for the formation of these metal surface clusters is presented.

  12. Chemical and mechanical properties of silica hybrid films from NaOH catalyzed sols for micromachining with diamond cutting tools

    Energy Technology Data Exchange (ETDEWEB)

    Prenzel, T., E-mail: tprenzel@uni-bremen.de [Stiftung Institut für Werkstofftechnik, Badgasteiner Str. 3, 28359 Bremen (Germany); Mehner, A. [Stiftung Institut für Werkstofftechnik, Badgasteiner Str. 3, 28359 Bremen (Germany); Lucca, D.A.; Qi, Y.; Harriman, T.A. [School of Mechanical and Aerospace Engineering, 218 Engineering North, Oklahoma State University, Stillwater, OK 74078 (United States); Mutlugünes, Y. [Labor für Mikrozerspanung — LFM, Badgasteiner Str. 2, 28359 Bremen (Germany); Shojaee, S.A. [School of Mechanical and Aerospace Engineering, 218 Engineering North, Oklahoma State University, Stillwater, OK 74078 (United States); Wang, Y.Q.; Williams, D. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Nastasi, M. [Nebraska Center for Energy Sciences Research, University of Nebraska, 230 Whittier Research Center, 2200 Vine Street Lincoln, NE 68583-0857 (United States); Zoch, H.-W. [Stiftung Institut für Werkstofftechnik, Badgasteiner Str. 3, 28359 Bremen (Germany); Swiderek, P. [Institute of Applied and Physical Chemistry, University of Bremen, Leobener Straße, 28359 Bremen (Germany)

    2013-03-01

    Manufacturing of microstructured mold surfaces was realized by the micromachining of thick sol–gel silica hybrid coatings. The films were deposited onto pre-machined steel molds by spin coating using NaOH-catalyzed sols from organosilicate precursors. The effect of the sol synthesis and the heat treatment on the mechanical and chemical properties of these films was studied in order to develop thick and crack-free films with appropriate properties for micromachining with diamond cutting tools. The hardness was measured by nanoindentation as a function of the heat treatment temperature. The transition from soft organic gel films to hard glass-like films due to the thermal treatment was characterized by X-ray photoelectron spectroscopy, elastic recoil detection, and Raman and infrared spectroscopies. The films from NaOH catalyzed sols showed a complex transition from aliphatic carbon originating from hydrocarbon groups to carbonates, carboxylates and disordered carbon clusters. - Highlights: ► Thick silica hybrid films were micromachined with diamond cutting tools. ► The nanoindentation hardness increased with the heat treatment temperature. ► The role of sodium hydroxide in base catalyzed silica sols was studied. ► Formation of carbonates, carboxylates and disordered carbon was observed.

  13. Electrochemical codeposition of sol-gel films on stainless steel: controlling the chemical and physical coating properties of biomedical implants.

    Science.gov (United States)

    Okner, Regina; Favaro, Gregory; Radko, Anna; Domb, Abraham Jacob; Mandler, Daniel

    2010-12-14

    The electrochemically assisted codeposition of sol-gel thin films on stainless steel is described. Specifically, electrodeposition of films based on aminopropyltriethoxysilane (APTS), and its codeposition with propyltrimethoxysilane (PrTMOS) and phenyltrimethoxysilane (PhTMOS) has been accomplished by applying negative potentials. The latter increases the concentration of hydroxyl ions on the stainless steel surface and thus catalyzes the condensation and deposition of the sol-gel films. The films were characterized by profilometry, electrochemical impedance spectroscopy (EIS), alternating current voltammetry (ACV), goniometry, atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM and SEM analysis of codeposited APTS:PrTMOS films disclosed the structural changes induced by altering the deposition solution composition and the applied potential. Codeposited APTS:PhTMOS did not show any structural differences from their electrodeposited homopolymers, while Nano Scratch Test clearly revealed the changes in the elastic and adhesion properties, suggesting the formation of an APTS:PhTMOS composite. EIS of the films showed good resistance towards penetration of hydrophilic species, such as hexacyanoferrate. ACV measurements of the homo and codeposits showed the decrease of the interfacial capacity as a result of the electrochemical deposition. In essence, controllable sol-gel films with tunable chemical and physical properties based on controlling the combination of the precursors, pH and electrochemical properties can be electrodeposited on conducting surfaces. The application of this approach has been demonstrated by coating a stainless steel coronary stent.

  14. High-removal selectivity through interaction between polyacrylamide and SiO2 film in poly isolation chemical mechanical planarization.

    Science.gov (United States)

    Kim, Ye-Hwan; Lee, Kee-June; Park, Jea-Gun; Paik, Ungyu

    2009-06-01

    The interaction between polyacrylamide (PAM) and SiO2 film was investigated in order to elucidate the removal polycrystalline silicon (poly Si) to SiO2 selectivity in poly isolation chemical mechanical planarization (CMP). The hydrophilic characteristics of poly Si and SiO2 were analyzed by the X-ray photoelectron spectroscopy (XPS) and contact angle measurement. The surface of SiO2 is more hydrophilic than that of poly Si due to the siloxane (triple bond Si-O-Si triple bond) bonding. The adsorption behavior of PAM on poly Si and SiO2 film was determined by adsorption isotherms and force measurements using atomic force microscopy (AFM). Interaction between siloxane bonding of SiO2 film and the amine group along the backbone of PAM results in the adsorption of PAM on SiO2 film. Consequently, the passivation layer of PAM on the SiO2 film prevented abrasives from approaching the surface of SiO2 film, which led to suppression of the removal rate of SiO2 film from 82 to 12 A/min in poly isolation CMP process.

  15. Crystalline silicon for thin film solar cells. Final report; Kristallines Silizium fuer Duennschichtsolarzellen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, H.

    2001-07-01

    Thin film solar cells based on silicon are of great interest for cost-effective conversion of solar energy into electric power. In order to reach this goal, intensive research is still necessary, pointing, e.g., to a further enhancement of the conversion efficiency, an improvement of stability and a reduction of the production time. Aim of the project work was the achievement of knowledge on microcrystalline silicon and its application in thin film solar cells by means of a broad research and development program. Material research focused on growth processes of the microcrystalline material, the incorporation and stability of hydrogen, the electronic transport and defects. In particular the transition from amorphous to microcrystalline material which is obtained for the present deposition methods by minor variations of the deposition parameters as well as the enhancement of the deposition rate were intensively studies. Another focus of research aimed toward the development and improvement of zinc oxide films which are of central importance for this type of solar cells for the application as transparent contacts. A comprehensive understanding was achieved. The films were incorporated in thin film solar cells and with conversion efficiencies >8% for single cells (at relatively high deposition rate) and 10% (stable) for tandem cells with amorphous silicon, top values were achieved by international standards. The project achievements serve as a base for a further development of this type of solar cell and for the transfer of this technology to industry. (orig.) [German] Duennschichtsolarzellen auf der Basis von Silizium sind von grossem Interesse fuer eine kostenguenstige Umwandlung von Sonnenenergie in elektrischen Strom. Um dieses Ziel zu erreichen, ist jedoch noch intensive Forschung, u.a. zur weiteren Steigerung des Wirkungsgrades, zur Verbesserung der Stabilitaet und zur Verkuerzung des Produktionsprozesses erforderlich. Ziel der Projektarbeiten war, durch ein

  16. Gel for simultaneous chemical imaging of anionic and cationic solutes using diffusive gradients in thin films.

    Science.gov (United States)

    Kreuzeder, Andreas; Santner, Jakob; Prohaska, Thomas; Wenzel, Walter W

    2013-12-17

    We report on a novel gel based on diffusive gradients in thin films (DGT) for the simultaneous measurement of cations and anions and its suitability for high resolution chemical imaging by using laser ablation inductively coupled plasma mass spectrometry (LA-ICPMS). The new high resolution mixed binding gel (HR-MBG) is based on zirconium-hydroxide and suspended particulate reagent-iminodiacetate (SPR-IDA) as resin materials which are embedded in an ether-based urethane polymer hydrogel. The use of this polymer hydrogel material allows the production of ultrathin, highly stable and tear-proof resin gel layers with superior handling properties compared to existing ultrathin polyacrylamide gels. The gel was characterized regarding its uptake kinetics, the anion and cation capacities, and the effects of pH, ionic strength, and aging on the performance of the HR-MBG. Our results demonstrate the capability of this novel gel for concomitant sampling of anions and cations. The suitability of this new gel type for DGT chemical imaging at submm spatial resolution in soils using LA-ICPMS is shown. 2D images of P, As, Co, Cu, Mn, and Zn distributions around roots of Zea mays L. demonstrate the new opportunities offered by the HR-MBG for high-resolution mapping of solute dynamics in soil and sediment hotspots, such as the rhizosphere, by simultaneous observation of anionic and cationic solute species.

  17. Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

    Science.gov (United States)

    Miyoshi, Kazuhisa

    2000-01-01

    The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

  18. Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

    Directory of Open Access Journals (Sweden)

    M. M. Kamble

    2014-01-01

    Full Text Available Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H films, deposited from silane (SiH4 and methane (CH4 gas mixture by HW-CVD method, were investigated. Film properties are carefully and systematically studied as function of deposition pressure which is varied between 200 mTorr and 500 mTorr. The deposition rate is found to be reasonably high (9.4 nm/s films is confirmed by FTIR, Raman, and XPS analysis. XRD and Raman analysis revealed that with increasing deposition pressure amorphization occurs in SiC:H films. FTIR spectroscopy analysis shows that bond density of C–H decreases while Si–C and Si–H bond densities increase with increasing deposition pressure. Total hydrogen content increases with increasing deposition pressure and was found to be <20 at.%. The absence of band ~1300–1600 cm−1 in the Raman spectra implies negligible C–C bond concentration and formation of nearly stoichiometric SiC:H films. The band gap shows increasing trend with increasing deposition pressure. The high value of Urbach energy suggests increased structural disorder in SiC:H films. Finally, it has been concluded that CH4 can be used as effective carbon source in HW-CVD method to prepare stoichiometric SiC:H films.

  19. High quality MgB{sub 2} thick films and large-area films fabricated by hybrid physical-chemical vapor deposition with a pocket heater

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S F; Chen, Ke; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, C-H; Soukiassian, A; DeFrain, R; Redwing, J M; Schlom, D G [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D R [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States)], E-mail: suw16@psu.edu

    2008-08-15

    A hybrid physical-chemical vapor deposition process using a pocket heater was developed for the growth of high quality epitaxial large-area MgB{sub 2} thin films and c-axis textured MgB{sub 2} thick films. This technique is able to independently control the substrate and Mg source temperatures and maintain sufficient Mg overpressure to ensure phase stability. The two-inch large-area MgB{sub 2} thin films showed uniform superconducting properties with the superconducting transition temperature T{sub c} of about 40 K, residual resistivity ratio (RRR) of about 10, and critical current density J{sub c} of about 10{sup 7} A cm{sup -2} (0 T, 5 K). The thick films ({approx}10 {mu}m) on sapphire substrates showed a maximum T{sub c} of 40 K and RRR of 15, and a J{sub c} of 1.6 x 10{sup 6} A cm{sup -2} at low applied magnetic fields even at 20 K. High quality thick films also have been obtained on metal substrates.

  20. Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-02-10

    Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

  1. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    Science.gov (United States)

    Kakati, A.; Maji, D.; Das, S.

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µm thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C16H36FN) and tetra-n-butylammonium fluoride (C5H9NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µm min-1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5-15 gm l-1 of silicic acid (SiO2x H2O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µm etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures.

  2. Surface-complex films of guanidine on tantalum nitride electrochemically characterized for applications in chemical mechanical planarization

    Energy Technology Data Exchange (ETDEWEB)

    Rock, S.E.; Crain, D.J. [Department of Physics, Clarkson University, Potsdam, NY 13699-5820 (United States); Pettit, C.M. [Department of Physics, Emporia State University, Emporia, KS 66801-5087 (United States); Roy, D., E-mail: samoy@clarkson.edu [Department of Physics, Clarkson University, Potsdam, NY 13699-5820 (United States)

    2012-01-31

    Chemical mechanical planarization (CMP) of tantalum nitride is an essential step of material processing in the fabrication of integrated circuits. This CMP step often involves the chemical formation of a structurally weak oxide-complex film on the wafer surface, followed by selective removal of the film with mechanical abrasion under reduced loading. The present work investigates certain chemical aspects of this strategy of TaN-CMP by using guanidine carbonate (GC) as a surface complexing agent, and employing electrochemical experiments. The experiments are designed to study the chemical and electrochemical origins of the CMP-specific surface complex films formed on a TaN wafer in acidic solutions of GC and hydrogen peroxide. Open circuit potential, polarization resistance, and electrochemical impedance measurements are employed to probe the surface effects that facilitate material removal in chemically prevailing CMP of TaN. The results are discussed in view of designing slurry variables to support barrier layer planarization with reduced roles of mechanical abrasion.

  3. Optimization of synthesis conditions of PbS thin films grown by chemical bath deposition using response surface methodology

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, Ersin, E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Yücel, Yasin; Beleli, Buse [Department of Chemistry, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-09-05

    Highlights: • For the first time, RSM and CCD used for optimization of PbS thin film. • Tri-sodium citrate, deposition time and temperature were independent variables. • PbS thin film band gap value was 2.20 eV under the optimum conditions. • Quality of the film was improved after chemometrics optimization. - Abstract: In this study, PbS thin films were synthesized by chemical bath deposition (CBD) under different deposition parameters. Response surface methodology (RSM) was used to optimize synthesis parameters including amount of tri-sodium citrate (0.2–0.8 mL), deposition time (14–34 h) and deposition temperature (26.6–43.4 °C) for deposition of the films. 5-level-3-factor central composite design (CCD) was employed to evaluate effects of the deposition parameters on the response (optical band gap of the films). The significant level of both the main effects and the interaction are investigated by analysis of variance (ANOVA). The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV–visible spectrophotometer. The optimum amount of tri-sodium citrate, deposition time and deposition temperature were found to be 0.7 mL, 18.07 h and 30 °C respectively. Under these conditions, the experimental band gap of PbS was 2.20 eV, which is quite good correlation with value (1.98 eV) predicted by the model.

  4. Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition

    Science.gov (United States)

    Alema, Fikadu; Ledyaev, Oleg; Miller, Ross; Beletsky, Valeria; Osinsky, Andrei; Schoenfeld, Winston V.

    2016-02-01

    We report on the growth of high Mg content, high quality, wurtzite MgxZn1-xO (MgZnO) epitaxial films using a pulsed metal organic chemical vapor deposition (PMOCVD) method. Series of MgZnO films with variable Mg concentration were deposited on bare and AlN coated sapphire substrates. The band gap of the films estimated using UV-visible transmission spectra ranges from 3.24 eV to 4.49 eV, corresponding to fraction of Mg between x=0.0 and x=0.51, as determined by Rutherford backscattering spectroscopy. The cathodoluminescence (CL) measurement has shown a blue-shift in the peak position of MgZnO with an increasing Mg content. No multi-absorption edges and CL band splitting were observed, suggesting the absence of phase segregation in the as grown films. The crystal structure and phase purity of the films were also confirmed by XRD analysis. Hall effect measurement in van der Pauw configuration was employed to evaluate the electrical properties of the films. With a rise in Mg incorporation into the ZnO lattice, the films became very resistive, consistent with the widening of the band gap. The AFM measurement on the films has shown a decreasing surface roughness with an Mg content. To the best of our knowledge, the current result shows the highest Mg content (x=0.51), high quality, wurtzite MgZnO epitaxial film ever grown by MOCVD. The high Mg incorporation without phase separation is believed to be due to the non-equilibrium behavior of the PMOCVD in which the kinetic processes dominate the thermodynamic one.

  5. Ferromagnetic response of multiferroic TbMnO{sub 3} films mediated by epitaxial strain and chemical pressure

    Energy Technology Data Exchange (ETDEWEB)

    Izquierdo, J.; Morán, O., E-mail: omoranc@unal.edu.co [Universidad Nacional de Colombia, Campus Medellín, Departamento de Física, Laboratorio de Materiales Cerámicos y Vítreos, A.A. 568, Medellín Colombia (Colombia); Astudillo, A.; Bolaños, G. [Low Temperature Laboratory, Department of Physics, University of Cauca, Calle 5 No. 4-70, Popayán (Colombia); Arnache, O. [Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia, Calle 70 No. 52-21, A.A. 1226, Medellín (Colombia)

    2014-05-07

    High quality Tb{sub 1−x}Al{sub x}MnO{sub 3} (x = 0, 0.3) films have been grown under different values of compressive/tensile strain using (001)-oriented SrTiO{sub 3} and MgO substrates. The films were grown by means of rf sputtering at substrate temperature of 800  °C. X-ray diffraction analysis shows that films are single phase, preferentially oriented in the (111) and (122) directions for films deposited on SrTiO{sub 3} and MgO substrates, respectively. Although the TbMnO{sub 3} target shows antiferromagnetic order, the films deposited on both substrates show weak ferromagnetic phase at low temperature coexisting with the antiferromagnetic phase. The introduction of Al in the films clearly enhances their ferromagnetic behavior, improving the magnetic performance of this material. Indeed, M(H) measurements at 5 K show a well-defined hysteresis for films grown on both substrates. However, a stronger magnetic signal (larger values of remanence and coercive field) is observed for films deposited on MgO substrates. The chemical pressure generated by Al doping together with the substrate-induced strain seem to modify the subtle competition between magnetic interactions in the system. It is speculated that such modification could lead to a non-collinear magnetic state that may be tuned by strain modifications. This may be performed by varying the thickness of the films and/or considering other substrate materials.

  6. Initiated Chemical Vapor Deposition (iCVD) Polymer Thin Films: Structure-Property Effects on Thermal Degradation and Adhesion

    Science.gov (United States)

    Bharamaiah Jeevendrakumar, Vijay Jain

    Opportunities and challenges for chemical vapor deposition (CVD) of polymer thin films stems from their applications in electronics, sensors, and adhesives with demands for control over film composition, conformity and stability. Initiated chemical vapor deposition (iCVD) is a subset of the CVD technique that conjoins bulk free-radical polymerization chemistry with gas-phase processing. The novelty of iCVD technique stems from the use of an initiator that can be activated at low energies (150 -- 300 °C) to react with surface adsorbed monomer to form a polymer film. This reduces risk for potential unwarranted side-reactions. Until recently, majority of iCVD research was limited to understanding the deposition kinetics with monomer properties being the principal parameters. However, there is a lack of study on the properties of deposited films which is critical for utilizing the technique in any real-world applications. The work presented here aims to advance investigation in this direction by characterizing the thermal properties of iCVD polymer films with primary focus on the initiators. A detailed characterization of custom-built iCVD system served as ground work for following investigations. Poly(neopentyl methacrylate) (PnPMA) thin films were deposited with tert-butyl peroxide (TBPO) initiators and their Tg, CTE and thermal degradation properties were investigated. iCVD PnPMA films presented low-temperature degradation peaks attributed to weak linkages from H-abstraction and beta-scission reactions of TBPO. To test this hypothesis, PnPMA films were deposited with tert-butyl peroxybenzoate (TBPOB) which is selective towards vinyl addition. Contrary to expected results, TBPOB initiated films showed degradation at lower temperatures compared to TBPO initiated films. It is postulated that with TBPOB, the surface initiator concentration is higher and consequently small oligomeric molecules were formed that degraded easily. Following these investigations, poly

  7. Investigating the effect of capping layers on final thin film morphology after a dewetting process

    Science.gov (United States)

    White, Benjamin C.

    Nanoparticles on a substrate have numerous applications in nanotechnology, from enhancements to solar cell efficiency to improvements in carbon nanotube growth. Producing nanoparticles in a cheap fashion with some control over size and spacing is difficult to do, but desired. This work presents a novel method for altering the radius and pitch distributions of nickel and gold nanoparticles in a scalable fashion. The introduction of alumina capping layers to thin nickel films during a pulsed laser-induced dewetting process has yielded reductions in the mean and standard deviation of radii and pitch for dewet nanoparticles. Carbon nanotube mats grown on these samples show a much thicker mat for the capped case. The same capping layers have produced an opposite effect of increased nanoparticle size and spacing during a solid state dewetting process of a gold film. These results also show a decrease in the magnitude of the effect as the capping layer thickness increases. Since the subject of research interest for using these nanoparticles has shifted towards producing ordered arrays with size and spacing control, the uncertainty in the values of these distributions needs to be quantified for any form of meaningful comparison to be made between fabrication methods. Presented here is a first step in the uncertainty analysis of such samples via synthetic images producing error distributions.

  8. Wear-resisting oxide films for 900{degree}C. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Peterson, M.B. [Wear Sciences Corp., Arnold, MD (United States); Li, S.Z. [Inst. of Metal Research, Shenyang (China); Murray, S.F. [Rensselaer Polytechnic Inst., Troy, NY (United States)

    1994-03-01

    For the past 50 years, temperatures in advanced heat engines have been increasing. New-generating engines will require lubricants for 1,000 C and higher. One of the most critical applications is the regenerator seals on the automotive gas turbine. In this seal, a metal plate slides against a porous ceramic surface for several thousand hours at speeds on the order of 10 cm/sec. For long-term usage above 900 C it will probably be necessary to use oxide lubricants. If effective ones can be found, then a simple solution would be available for an application like the regenerator seal: fabricate it with an alloy which forms a lubricating oxide. The objective of this study was to explore this concept for the regenerator seal. A study was conducted to develop low-friction, wear-resistant surfaces on high-temperature alloys for the temperature range 26 C to 900 C. The approach investigated consisted of modifying the naturally occurring oxide film in order to improve its tribological properties. Improvement was needed at low temperatures where the oxide film, previously formed at high-temperature, spalls due to stresses induced by sliding. Experiments with titanium, tungsten, and tantalum additions showed a beneficial effect when added to nickel and nickel alloys. Low friction was maintained down to 100 C from 900 C. For unalloyed nickel friction and surface damage increased at 400 C to 500 C. Other approaches proved less successful and require further study.

  9. Thin film CIGS solar cells with a novel low cost process - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, A. N.; Romanyuk, Y.

    2010-01-15

    Novel manufacturing routes for efficient and low-cost Cu(In,Ga)Se{sub 2} (called CIGS) thin film solar cells are explored and patented. CIGS has proven its suitability for highly efficient and extremely stable solar cells. The low-cost methods allow impurity free material synthesis, fast large-area deposition, high material utilization and a very short energy payback time with drastically lower manufacturing costs. Two non-vacuum, solution-based approaches are investigated to deposit thin layers of CIGS. The first approach considers incorporation of copper into indium gallium selenide precursor layers by ion-exchange from aqueous or organic solutions. Organic solutions provide faster copper incorporation and do not corrode the metal back contact. Solar cells processed from selenized precursor films exhibit efficiencies of up to 4.1%. The second approach with paste coating of inorganic salt solution results in a solar cell efficiency of 4% (record 6.7%), where further improvements are hindered by the presence of the residual carbon layer. Using alternative organic binders, pre-deposited selenium layers, non-binder recipes helps to avoid the carbon layer although the obtained layers are inhomogeneous and contain impurity phases. A patent for the ion-exchange approach is pending, and the obtained research results on the paste coating approach will be scrutinized during new European FP7 project 'NOVA-CIGS'. (authors)

  10. Nanostructured Thin Film Synthesis by Aerosol Chemical Vapor Deposition for Energy Storage Applications

    Science.gov (United States)

    Chadha, Tandeep S.

    Renewable energy sources offer a viable solution to the growing energy demand while mitigating concerns for greenhouse gas emissions and climate change. This has led to a tremendous momentum towards solar and wind-based energy harvesting technologies driving efficiencies higher and costs lower. However, the intermittent nature of these energy sources necessitates energy storage technologies, which remain the Achilles heel in meeting the renewable energy goals. This dissertation focusses on two approaches for addressing the needs of energy storage: first, targeting direct solar to fuel conversion via photoelectrochemical water-splitting and second, improving the performance of current rechargeable batteries by developing new electrode architectures and synthesis processes. The aerosol chemical vapor deposition (ACVD) process has emerged as a promising single-step approach for nanostructured thin film synthesis directly on substrates. The relationship between the morphology and the operating parameters in the process is complex. In this work, a simulation based approach has been developed to understand the relationship and acquire the ability of predicting the morphology. These controlled nanostructured morphologies of TiO2 , compounded with gold nanoparticles of various shapes, are used for solar water-splitting applications. Tuning of light absorption in the visible-light range along with reduced electron-hole recombination in the composite structures has been demonstrated. The ACVD process is further extended to a novel single-step synthesis of nanostructured TiO2 electrodes directly on the current collector for applications as anodes in lithium-ion batteries, mainly for electric vehicles and hybrid electric vehicles. The effect of morphology of the nanostructures has been investigated via experimental studies and electrochemical transport modelling. Results demonstrate the exceptional performance of the single crystal one-dimensional nanostructures over granular

  11. Chemical systems for electrochemical mechanical planarization of copper and tantalum films

    Science.gov (United States)

    Muthukumaran, Ashok Kumar

    Electro-Chemical Mechanical Planarization (ECMP) is a new and highly promising technology just reaching industrial application; investigation of chemistries, consumables, and tool/control approaches are needed to overcome technological limitations. Development of chemical formulations for ECMP presents several challenges. Unlike conventional CMP, formulations for ECMP may not need an oxidant. Organic additives, especially inhibitors used to control planarity (i.e. to protect recessed regions), need to be stable under applied anodic potential. To have a high current efficiency, the applied current should not induce decomposition of the formulations. In addition, to enable clearing of the copper film, the interactions between multiple exposed materials (barrier material as well as copper) must be considered. Development of a full sequence ECMP process would require the removal of the barrier layer as well. Chemical systems that exhibit a 1:1 selectivity between the barrier layer and copper would be ideal for the barrier removal step of ECMP. The main goal of this research is to investigate the chemistries suitable for ECMP of copper and tantalum films. Copper was electroplated onto the gold electrode of quartz crystals, and its dissolution/passivation behavior in hydroxylamine solutions was studied at different applied potential values. The dissolution rate of copper is pH dependent and exhibits a maximum in the vicinity of pH 6. Copper dissolution increases with respect to overpotential (eta) and dissolution rates as high as 6000 A/min have been obtained at overpotential of 750mV. While both benzotriazole (BTA) and salicylhydroxamic acid (SHA) serve as good inhibitors at lower overpotentials, their effectiveness decreases at higher overpotentials. A fundamental study was undertaken to evaluate the usefulness of a sulfonic acid based chemical system for the removal of tantalum under ECMP conditions. Tantalum as well as copper samples were polished at low pressures (

  12. Investigations of chemical modifications of amino-terminated organic films on silicon substrates and controlled protein immobilization.

    Science.gov (United States)

    Kim, Joonyeong; Cho, Joungmo; Seidler, Paul M; Kurland, Nicholas E; Yadavalli, Vamsi K

    2010-02-16

    Fourier transform infrared spectroscopy by grazing-angle attenuated total reflection (FTIR-GATR), ellipsometry, atomic force microscopy (AFM), UV-visible spectroscopy, and fluorescence microscopy were employed to investigate chemical modifications of amino-terminated organic thin films on silicon substrates, protein immobilization, and the biological activity and hydrolytic stability of immobilized proteins. Amino-terminated organic films were prepared on silicon wafers by self-assembling 3-aminopropyltriethoxysilane (APTES) in anhydrous toluene. Surface amino groups were derivatized into three different linkers: N-hydroxysuccinimide (NHS) ester, hydrazide, and maleimide ester groups. UV-visible absorption measurements and fluorescence microscopy revealed that more than 40% of surface amino groups were chemically modified. Protein immobilization was carried out on modified APTES films containing these linkers via coupling with primary amines (-NH(2)) in intact monoclonal rabbit immunoglobulin G (IgG), the aldehyde (-CHO) of an oxidized carbohydrate residue in IgG, or the sulfhydryl (-SH) of fragmented half-IgG, respectively. FTIR spectra contain vibrational signatures of these functional groups present in modified APTES films and immobilized IgGs. Changes in the APTES film thickness after chemical modifications and protein immobilization were also observed by ellipsometric measurements. The biological activity and long-term hydrolytic stability of immobilized IgGs on modified APTES films were estimated by fluorescence measurements of an adsorbed antigen, fluorescein isothiocyanate (FITC)-labeled goat anti-rabbit IgG (FITC-Ab). Our results indicate that the FITC-Ab binding capacity of half-IgG immobilized via maleimide groups is greater than that of the oxidized IgG and the intact IgG immobilized via hydrazide and NHS ester groups, respectively. In addition, IgGs immobilized using all coupling chemistries were hydrolytically stable in phosphate-buffered saline (PBS).

  13. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  14. Effect of chemical treatment on surface characteristics of sputter deposited Ti-rich NiTi shape memory alloy thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K., E-mail: drsudhirsharma@gmail.com; Mohan, S.

    2014-04-01

    Graphical abstract: FTIR spectra recorded for sputter deposited (a) untreated and (b) chemically treated NiTi SMA thin-films. - Highlights: • The effect of chemical treatment on surface properties of NiTi films demonstrated. • Chemically treated films offer strong ability to form protective TiO{sub 2} layer. • TiO{sub 2} layer formation offer great application prospects in biomedical fields. - Abstract: NiTi thin-films were deposited by DC magnetron sputtering from single alloy target (Ni/Ti:45/55 at.%). The rate of deposition and thickness of sputter deposited films were maintained to ∼35 nm min{sup −1} and 4 μm respectively. A set of sputter deposited NiTi films were selected for specific chemical treatment with the solution comprising of de-ionized water, HF and HNO{sub 3} respectively. The influence of chemical treatment on surface characteristics of NiTi films before and after chemical treatment was investigated for their structure, micro-structure and composition using different analytical techniques. Prior to chemical treatment, the composition of NiTi films using energy dispersive X-ray dispersive spectroscopy (EDS), were found to be 51.8 atomic percent of Ti and 48.2 atomic percent of Ni. The structure and morphology of these films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD investigations, demonstrated the presence of dominant Austenite (1 1 0) phase along with Martensite phase, for untreated NiTi films whereas some additional diffraction peaks viz. (1 0 0), (1 0 1), and (2 0 0) corresponding to Rutile and Anatase phase of Titanium dioxide (TiO{sub 2}) along with parent Austenite (1 1 0) phase were observed for chemically treated NiTi films. FTIR studies, it can be concluded that chemically treated films have higher tendency to form metal oxide/hydroxide than the untreated NiTi films. XPS investigations, demonstrated the presence of Ni-free surface and formation of a protective metal oxide (TiO{sub 2

  15. Chemical rate model for the surface pyrolysis of tetrakis(dimethylamido)titanium to form titanium nitride films

    Science.gov (United States)

    Toprac, Anthony J.; Iacoponi, John A.; Littau, Karl A.

    1998-09-01

    A chemical kinetic rate model for the deposition of titanium nitride films from the surface reaction of tetrakis(dimethyl-amido)titanium (TDMAT) was developed. Without ammonia addition, TDMAT forms a titanium nitride film by pyrolyzing on the hot substrate surface. Experimental data from the applied materials 5000 deposition tool was modeled using a CSTR formulation. With the parameters of the surface reaction model regressed to fit portions of the experimental results, reasonably accurate model predictions over the entire domain of experimental data were obtained.

  16. Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures

    Institute of Scientific and Technical Information of China (English)

    Fan Hai-Bo; Zheng Xin-Liang; Wu Si-Cheng; Liu Zhi-Gang; Yao He-Bao

    2012-01-01

    ZnO nanocrystalline films are prepared on Si substrates at different temperatures by using metal-organic chemical vapour deposition (MOCVD).It is observed that when the growth temperature is low,the stoichiometric ratio between Zn and O atoms has a large deviation from the ideal ratio of 1:1.The ZnO grains in the film have small sizes and are not well crystallized,resulting in a poor photoluminescence (PL) property.When the temperature is increased to an appropriate value,the Zn/O ratio becomes optimized,and most of Zn and O atoms are combined into Zn-O bonds.Then the film has good crystal quality and good PL property.If the temperature is fairly high,the interfacial mutual diffusion of atoms between the substrate and the epitaxial film appears,and the desorption process of the oxygen atoms is enhanced.However,it has no effect on the film property.The film still has the best crystal quality and PL property.

  17. Growth mechanism of single-crystalline NiO thin films grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Roffi, Teuku Muhammad; Nozaki, Shinji; Uchida, Kazuo

    2016-10-01

    Nickel oxide (NiO) thin films were grown by atmospheric-pressure metal organic chemical vapor deposition (APMOCVD). Growth was carried out using various growth parameters, including the growth temperature, the input precursor (O2/Ni) ratio, and the type of substrate material. Effects of the growth parameters on the structural and electrical properties of the films were investigated. X-ray diffraction analysis revealed that the crystal structure and quality were strongly affected by the growth temperature and the type of substrate material. At an optimized growth temperature, single-crystalline NiO films were grown on MgO(100) and MgO(111) substrates in a cube-on-cube orientation relationship, while on an Al2O3(001) substrate, the film was grown in the NiO[111] direction. The use of MgO substrates successfully suppressed the formation of twin defects, which have been frequently reported in the growth of NiO. The difference in the formation of the twin defects on MgO and Al2O3 substrates was discussed. It was observed that the resistivity dependence on crystal quality was affected by the choice of substrate material. The effects of the precursor ratio on the transmittance and resistivity of the films were also investigated. Improved transparency in the visible wavelength region and higher conductivity were found in films grown with higher O2/Ni ratios.

  18. Investigation of the interrelation between the chemical state and the electric properties in Al-doped ZnO films

    Science.gov (United States)

    Wang, Jinzhao; Ni, Dongfang; Zhang, Tianjin; Wang, Duofa; Liang, Kun

    2015-09-01

    Transparent conducting Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio frequency magnetron sputtering in pure Ar. The influence of the annealing atmosphere on the microstructure, chemical state, electric and optical properties of the AZO films was investigated with X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy and Hall measurements. The AZO thin films annealed under vacuum had the highest carrier concentration of 2.488 × 1020 cm-3 and a Hall mobility of 16.35 cm2 V-1 s-1, while the AZO thin films annealed in air had the lowest carrier concentration of 4.182 × 1017 cm-3 and a Hall mobility of 2.375 cm2 V-1 s-1. The fitted narrow-scan O1 s spectra revealed that O1 s was composed of three components. The AZO thin films annealed under vacuum appeared to have a higher proportion of medium binding energy which correspond to O2- ions in the oxygen-deficient regions within the ZnO matrix, and have a lower proportion of high binding energy component which correspond to loosely bound chemisorbed oxygen. It believed that the oxygen vacancies and chemisorbed oxygen of the films played an important role in the electrical conductance. The carrier concentration increased with the formation of oxygen vacancies. The Hall mobility increased with desorption of the loosely bound oxygen.

  19. Wetting, Solubility and Chemical Characteristics of Plasma-Polymerized 1-Isopropyl-4-Methyl-1,4-Cyclohexadiene Thin Films

    Directory of Open Access Journals (Sweden)

    Jakaria Ahmad

    2014-07-01

    Full Text Available Investigations on the wetting, solubility and chemical composition of plasma polymer thin films provide an insight into the feasibility of implementing these polymeric materials in organic electronics, particularly where wet solution processing is involved. In this study, thin films were prepared from 1-isopropyl-4-methyl-1,4-cyclohexadiene (γ-Terpinene using radio frequency (RF plasma polymerization. FTIR showed the polymers to be structurally dissimilar to the original monomer and highly cross-linked, where the loss of original functional groups and the degree of cross-linking increased with deposition power. The polymer surfaces were hydrocarbon-rich, with oxygen present in the form of O–H and C=O functional groups. The oxygen content decreased with deposition power, with films becoming more hydrophobic and, thus, less wettable. The advancing and receding contact angles were investigated, and the water advancing contact angle was found to increase from 63.14° to 73.53° for thin films prepared with an RF power of 10 W to 75 W. The wetting envelopes for the surfaces were constructed to enable the prediction of the surfaces’ wettability for other solvents. The effect of roughness on the wetting behaviour of the films was insignificant. The polymers were determined to resist solubilization in solvents commonly used in the deposition of organic semiconducting layers, including chloroform and chlorobenzene, with higher stability observed in films fabricated at higher RF power.

  20. Synthesis, Structural and Optoelectronic Properties of Nanocrystalline CdSe Thin Films Prepared By Chemical Bath Deposition Route

    Directory of Open Access Journals (Sweden)

    C. P. Nikam

    2015-12-01

    Full Text Available Cadmium Selenide (CdSe thin films were deposited onto glass substrates by simple and low cost chemical bath deposition (CBD technique. Aqueous ammonia was used as a complexing agent for the synthesis of these films. Deposition parameters were optimised and the crystal structure and morphology of the films were characterized by x-ray diffraction (XRD and field emission scanning electron microscopy (FE-SEM, respectively. XRD pattern revealed that the as-prepared CdSe thin films are polycrystalline with hexagonal structure. The average crystallite size of CdSe thin film was found to be in the range of 12-16 nm. FE-SEM image revealed that deposited thin films were consisting of nanocrystalline grains, which were coalesced to form bigger grains that are in cluster form distributed over the substrate surface. Transmission spectra showed high transmittance in the visible region and direct optical band gap energy was found to be a function of deposition time.

  1. Effects of temperature on the morphology and optical properties of ZnS thin films deposited by chemical bath

    Science.gov (United States)

    Martín-Várguez, P. E.; Ceh, O.; González-Panzo, I. J.; Tec-Yam, S.; Patiño, R.; Oliva, A. I.

    2013-06-01

    Zinc sulphide thin films were deposited on Corning glass substrates by the chemical bath deposition technique at different temperatures. The influence of the bath temperature and deposition time on the morphological and optical properties of the ZnS films are herein investigated. ZnS films were deposited by changing the bath-temperature from 50 °C to 90 °C, and deposition times from 60 to 160 min. Thin and transparent films were obtained with thicknesses from 10 to 90 nm with the increment of the bath temperature, meanwhile the band gap energy Eg values diminishes from 4.15 to 3.4 eV. The quality of the ZnS film surfaces was also influenced by increasing the bath temperature, as showed by the reduced grain size and the increase of roughness, obtained from atomic force microscopy images. ZnS films of good optical quality were obtained at 90 °C with a mean value of Eg = 3.56 ± 0.03 eV.

  2. Synthesis and characterization of flower-like ZnSe nanostructured thin films by chemical bath deposition (CBD) method

    Science.gov (United States)

    Bakiyaraj, G.; Dhanasekaran, R.

    2013-04-01

    Flower-like zinc selenide nanostructured thin films were successfully prepared by a chemical bath deposition method on non-conducting glass substrate in an aqueous alkaline medium using sodium selenosulphate as Se2- ion source. The as-deposited films have been characterized by X-ray diffraction (XRD), high resolution scanning electron microscopy (HRSEM), energy-dispersive X-ray analysis (EDX), optical absorption, and photoluminescence spectroscopy (PL). The XRD studies reveal that the as-deposited ZnSe thin film is nanocrystalline with a face-centered cubic phase. SEM image shows the tens to hundreds of petals are self-assembled within a single nanoflower. The direct optical band gap ` E g' for as-deposited flower-like ZnSe thin films is found to be 2.80 eV. Room temperature PL measurement indicates that the as-deposited cubic ZnSe thin films have a near band edge (NBE) emission peaked at around 440 nm (2.81 eV) and broad weak band emission peak from 552 nm (2.24 eV) to 658 nm (1.88 eV). The strong NBE emission from the flower-like ZnSe nanostructured thin films reveals their potential as building for optoelectronic devices.

  3. Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias

    Science.gov (United States)

    Zhang, Lei; Shen, Honglie; You, Jiayi

    2013-08-01

    We have investigated the effect of negative substrate bias on microcrystalline silicon films deposited on glass and stainless steel by hot-wire chemical vapor deposition (HWCVD) to gain insight into the effect of negative substrate bias on crystallization. Structural characterization of the silicon films was performed by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. It was found that the crystallinity of the films is obviously improved by applying the substrate bias, especially for films on stainless steel. At hot-wire temperature of 1800°C and negative substrate bias of -800 V, grain size as large as 200 nm was obtained on stainless-steel substrate with crystalline fraction 9% higher than that of films deposited on glass and 15% higher than that of films deposited without substrate bias. It is deduced that the improvement of the crystallinity is mainly related to the accelerated electrons emitted from the hot wires. The differences in this improvement between different substrates are caused by the different electrical potential of the substrates. A solar cell fabricated by HWCVD with -800 V substrate bias is demonstrated, showing an obviously higher conversion efficiency than that without substrate bias.

  4. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ozaydin-Ince, Gozde, E-mail: gozdeince@sabanciuniv.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Matin, Asif, E-mail: amatin@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Khan, Zafarullah, E-mail: zukhan@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Zaidi, S.M. Javaid, E-mail: zaidismj@kfupm.edu.sa [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gleason, Karen K., E-mail: kkgleasn@mit.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2013-07-31

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling.

  5. Studies on Hall Effect and DC Conductivity Measurements of Semiconductor Thin films Prepared by Chemical Bath Deposition (CBD method

    Directory of Open Access Journals (Sweden)

    S. Thirumavalavana

    2015-12-01

    Full Text Available Semiconductors have various useful properties that can be exploited for the realization of a large number of high performance devices in fields such as electronics and optoelectronics. Many novel semiconductors, especially in the form of thin films, are continually being developed. Thin films have drawn the attention of many researchers because of their numerous applications. As the film becomes thinner, the properties acquire greater importance in the miniaturization of elements such as resistors, transistors, capacitors, and solar cells. In the present work, copper selenide (CuSe, cadmium selenide (CdSe, zinc selenide (ZnSe, lead sulphide (PbS, zinc sulphide (ZnS, and cadmium sulphide (CdS thin films were prepared by chemical bath deposition (CBD method. The prepared thin films were analyzed by using Hall measurements in Van Der Pauw configuration (ECOPIA HMS-3000 at room temperature. The Hall parameters such as Hall mobility of the material, resistivity, carrier concentration, Hall coefficient and conductivity were determined. The DC electrical conductivity measurements were also carried out for the thin films using the conventional two – probe technique. The activation energies were also calculated from DC conductivity studies.

  6. Effect of tri-sodium citrate concentration on structural, optical and electrical properties of chemically deposited tin sulfide films

    Science.gov (United States)

    Gode, F.; Guneri, E.; Baglayan, O.

    2014-11-01

    Tin sulfide thin films were deposited onto glass substrates by chemical bath deposition. The effects of molar concentration of the complexing agent, tri-sodium citrate, on the structural, morphological, optical and electrical properties of the films were investigated. The films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and Hall effect measurements. Polycrystalline film structure in orthorhombic phase was determined. Flower-like spherical grains are observed on the surface. While their average size increased from 345 nm to 750 nm when the tri-sodium citrate concentration was increased from 6.4 × 10-3 M to 8.0 × 10-3 M, the surface roughness varied in an opposite manner from approximately 120.18 nm to 29.36 nm. For these concentrations, optical band gap of the films decreased from 1.40 eV to 1.17 eV, whereas the Hall conductivity, mobility and carrier concentration of the films increased slightly from 5.91 × 10-5 to 8.78 × 10-5 (Ω cm)-1, from 148 to 228 cm2 V-1 s-1 and from 1.73 × 1012 to 3.59 × 1012 cm-1, respectively.

  7. Optical properties of TiO{sub 2} thin films prepared by chemical spray pyrolysis from aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Ayouchi, R.; Casteleiro, C.; Schwarz, R. [Departamento de Fisica, Instituto Superior Tecnico, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Barrado, J.R.; Martin, F. [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Departamento de Fisica Aplicada I e Departamento de Ingenieria Quimica, Universidad de Malaga, 29071 Malaga (Spain)

    2010-04-15

    Titanium dioxide (TiO{sub 2}) is known to have three different kinds of polymorphous crystalline forms: rutile, anatase, and brookite. The rutile phase is always formed at higher temperatures, while the anatase phase is formed at lower temperatures and transformed into rutile phase above 800 C. Various deposition techniques have been developed for depositing TiO{sub 2} thin films, including evaporation, sputtering, chemical vapour deposition and thermal oxidation of titanium. Among them, the Chemical Spray Pyrolysis (CSP) technique has many advantages, such as good conformal coverage, the possibility of epitaxial growth and the application to large area deposition. Also, this method is low cost and it is easy to control the deposition growth parameters. In the present work, TiO{sub 2} thin films have been deposited on p-Si(001) and fused silica substrates by Chemical Spray Pyrolysis (CSP) method from aqueous solution containing titanium (IV) isopropoxide (Ti[OCH(CH{sub 3}){sub 2}]{sub 4}). As-deposited thin films show anatase polycrystalline structure, and rutile phase formed for films annealed at 750 C. SEM images have confirmed a smooth and crack-free surface with low surface roughness. X-ray photoelectron spectroscopy (XPS) combined with 4 keV Ar{sup +} depth profiling has shown that crystallized films correspond to TiO{sub 2}. Residual carbon coming from the organic precursor solution is only detected at the surface of the film. Thin films deposited on fused silica were highly transparent (more than 85%), with an indirect optical band gap of 3,43 and 3,33 eV for as-deposited and annealed films, respectively, and refractive indexes in the range between 2.01-2.29. Spectroscopic Ellipsometry (SE) also has been used to extract optical parameters. SE data fitted to triple-layer physical model revealed the same tendency to increase refractive index in annealed films. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. 77 FR 14493 - Polyethylene Terephthalate Film, Sheet, and Strip From the People's Republic of China: Final...

    Science.gov (United States)

    2012-03-12

    ... the Final Results Surrogate Country Selection and Surrogate Financial Ratios Issue 1: Whether the... should have selected the financial statement of JBF Industries Ltd. to calculate financial ratios. Issue... Administrative Review, 76 FR 68140 (November 3, 2011) (``Preliminary Results''). DATES: Effective Date: March...

  9. Influence of thin film nickel pretreatment on catalytic thermal chemical vapor deposition of carbon nanofibers

    NARCIS (Netherlands)

    Tiggelaar, R.M.; Thakur, D.B.; Nair, H.; Lefferts, L.; Seshan, K.; Gardeniers, J.G.E.

    2013-01-01

    Nickel and other metal nanoparticles are known to be active as catalysts in the synthesis of carbon nanofibers. In this paper we investigate how dewetting and break-up of nickel thin films depends on film thickness, film–substrate interaction and pretreatment conditions. This is evaluated for films

  10. Mechanical, physico-chemical, and antimicrobial properties of gelatin-based film incorporated with catechin-lysozyme

    Directory of Open Access Journals (Sweden)

    Rawdkuen Saroat

    2012-11-01

    Full Text Available Abstract Background Microbial activity is a primary cause of deterioration in many foods and is often responsible for reduced quality and safety. Food-borne illnesses associated with E. coli O157:H7, S. aureus, S. enteritidis and L. monocytogenes are a major public health concern throughout the world. A number of methods have been employed to control or prevent the growth of these microorganisms in food. Antimicrobial packaging is one of the most promising active packaging systems for effectively retarding the growth of food spoilage and pathogenic microorganisms. The aim of this study was to determine the mechanical, physico-chemical properties and inhibitory effects of the fish gelatin films against selected food spoilage microorganisms when incorporated with catechin-lysozyme. Results The effect of the catechin-lysozyme combination addition (CLC: 0, 0.125, 0.25, and 0.5%, w/v on fish gelatin film properties was monitored. At the level of 0.5% addition, the CLC showed the greatest elongation at break (EAB at 143.17% with 0.039 mm thickness, and the lowest water vapor permeability (WVP at 6.5 x 10−8 g·mm·h-1·cm-2·Pa-1, whereas the control showed high tensile strength (TS and the highest WVP. Regarding color attributes, the gelatin film without CLC addition gave the highest lightness (L* 91.95 but lowest in redness (a*-1.29 and yellowness (b* 2.25 values. The light transmission of the film did not significantly decrease and nor did film transparency (p>0.05 with increased CLC. Incorporating CLC could not affect the film microstructure. The solubility of the gelatin based film incorporated with CLC was not affected, especially at a high level of addition (p>0.05. Inhibitory activity of the fish gelatin film against E.coli, S.aureus, L. innocua and S. cerevisiae was concentration dependent. Conclusions These findings suggested that CLC incorporation can improve mechanical, physico-chemical, and antimicrobial properties of the resulting films

  11. Investigation of textured Al-doped ZnO thin films using chemical wet-etching methods

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Wei-Lun; Huang, Kuo-Chan [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Yeh, Chih-Hung [R and D Center, NexPower Technology Corporation, Taichung 421, Taiwan (China); Hung, Chen-I [Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2011-05-16

    Research highlights: {yields} The effects of deposition temperature on the electrical properties of ZnO:Al film is revealed in this study. {yields} The optical properties of textured ZnO:Al films etched in diluted HCl, H{sub 3}PO{sub 4} and HNO{sub 3} were studied. {yields} The effects of etching parameters on the optical and electrical properties of ZnO:Al film are investigated in this study. {yields} The diluted HNO{sub 3} is the best candidate to fabricate excellent textured surface with the highest haze ratio in this study. - Abstract: In this study, the optical properties and morphologies of Al-doped ZnO (AZO) films textured by the chemical wet-etching method with three different acid species are investigated. An initial AZO film is sputtered on a glass substrate by rf magnetron sputtering. The film surface was then textured by wet-etching using diluted HCl, HNO{sub 3} or H{sub 3}PO{sub 4}. The average transmittance of all the post-treated ZnO:Al films remains around 75-80% as measured by a UV-vis analyzer. A haze ratio calculation shows that the light scattering properties can be significantly controlled by varying the etchant species, acid concentration, and etching time. Atomic force microscopy (AFM) was used to find the average roughness of the textured AZO films. In this study, the HNO{sub 3} etchant gives the highest haze ratio of 49.2% at a wavelength of 550 nm. The textured ZnO:Al films with an electrical resistivity of 5.47 x 10{sup -4} {Omega}-cm, carrier concentrations of 3.98 x 10{sup 20} cm{sup -3} and mobility of 28.7 cm{sup 2} V{sup -1} s{sup -1}, can be obtained when etched in diluted HNO{sub 3} for 60 s. It is found that the chemical wet-etched AZO glass substrate appears to be helpful in enhancing the short circuit current (J{sub sc}) when applied on silicon thin film solar cells.

  12. Corrosion protection of solar-collctor heat exchangers with electrochemically deposited films. Final report, 15 May 1978-15 November 1979. [Polymers

    Energy Technology Data Exchange (ETDEWEB)

    Koch, V.R.; Schnaper, G.H.; Brummer, S.B.

    1980-05-01

    The goal of this program was the demonstration of a novel corrosion protection technique for the common solar collector metals: Al, Cu, and Fe as mild steel. This involves the electrochemical deposition of thin, adherent polymer films on the interior of heat-exchanger tubes by application of a current in the presence of a suitable organic monomer. Polyphenylene oxide (PPO) films were anodically deposited onto Cu and Fe coupons from methanolic media. However, defects in these films afforded poor corrosion protection. In an attempt to circumvent this problem, suitably functionalized PPO films were cross-linked via Schiff base formation in a subsequent chemical step. While these chemically modified PPO films were demonstrably more resistant to ethylene glycol H/sub 2/O media at elevated temperatures, they were eventually undetermined by the thermal transfer fluid. Cinnamaldehyde, a styrene-type monomre, has been successfully electrodeposited onto Al coupons. This process involved a constant, albeit unreferenced potential technique in which the Al is made the negative electrode. Cathodic deposition onto Al avoids passivating Al/sub 2/O/sub 3/ barrier coating formation, and is amenable to the cross-linking technique. Filmed and cross-linked Al samples stored at elevated temperatures resisted corrosive processes compared to unfilmed control samples. Pitting, however, was the ultimate fate of all filmed samples.

  13. Thin films of gallium arsenide on low-cost substrates. Final report, July 5, 1976--July 2, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Campbell, A.G.; Johnson, R.E.; Manasevit, H.M.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.

    1977-08-01

    The metalorganic chemical vapor deposition (MO-CVD) technique has been applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, alumina ceramics, and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium (TMG), arsine (AsH/sub 3/), and trimethylaluminum (TMAl) are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperature in the range 600 to 800/sup 0/C, to produce the desired film composition and properties. Of ten candidate low-cost substrates initially identified for investigation, Corning Code 0317 glass and composites of CVD Ge/glass and sputtered Mo/glass were found to be the most satisfactory, the latter eventually serving as a reference substrate against which to compare the performance of other substrates. Single-crystal window-type solar cells, polycrystalline Schottky-barrier cells, and deposited-junction polycrystalline cells have been grown, fabricated, and characterized. Epitaxial GaAlAs/GaAs p-n junction cells with thin (approx. 500A) Ga/sub 0/ /sub 2/Al/sub 0/ /sub 8/As windows and GaAs:Zn - GaAs:Se junctions were made with AMO efficiencies as high as 12.8 percent with no AR coating. Schottky barrier cells with efficiencies of 2.25 percent AMO (no AR coating) have been made on n/n polycrystalline GaAs structures on Mo/glass composite substrates, with short-circuit current densities up to 12.5 mA/cm/sup 2/. Also, results of analyses of material and processing costs associated with fabrication of thin-film GaAlAs/GaAs solar cells by the MO-CVD process are discussed.

  14. In-Situ Synchrotron X-ray Study of the Phase and Texture Evolution of Ceria and Superconductor Films Deposited by Chemical Solution Method

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; He, Dong

    2012-01-01

    In situ synchrotron x-ray diffraction is used to study the phase and texture formation of ceria based films and superconductor films deposited by the chemical solution method on technical substrates. Combined analysis using in situ synchrotron x-ray diffraction, thermogravimetry/differential ther......In situ synchrotron x-ray diffraction is used to study the phase and texture formation of ceria based films and superconductor films deposited by the chemical solution method on technical substrates. Combined analysis using in situ synchrotron x-ray diffraction, thermogravimetry...

  15. SnS Thin Films Prepared by Chemical Spray Pyrolysis at Different Substrate Temperatures for Photovoltaic Applications

    Science.gov (United States)

    Sall, Thierno; Soucase, Bernabé Marí; Mollar, Miguel; Sans, Juan Angel

    2017-03-01

    The preparation and analysis of morphological, structural, optical, vibrational and compositional properties of tin monosulfide (SnS) thin films deposited on glass substrate by chemical spray pyrolysis is reported herein. The growth conditions were evaluated to reduce the presence of residual phases different to the SnS orthorhombic phase. X-ray diffraction spectra revealed the polycrystalline nature of the SnS films with orthorhombic structure and a preferential grain orientation along the (111) direction. At high substrate temperature (450°C), a crystalline phase corresponding to the Sn2S3 phase was observed. Raman spectroscopy confirmed the dominance of the SnS phase and the presence of an additional Sn2S3 phase. Scanning electron microscopy (SEM) images reveal that the SnS film morphology depends on the substrate temperature. Between 250°C and 350°C, SnS films were shaped as rounded grains with some cracks between them, while at substrate temperatures above 400°C, films were denser and more compact. Energy-dispersive x-ray spectroscopy (EDS) analysis showed that the stoichiometry of sprayed SnS films improved with the increase of substrate temperature and atomic force microscopy micrographs showed films well covered at 350°C resulting in a rougher and bigger grain size. Optical and electrical measurements showed that the optical bandgap and the resistivity decreased when the substrate temperature increased, and smaller values, 1.46 eV and 60 Ω cm, respectively, were attained at 450°C. These SnS thin films could be used as an absorber layer for the development of tandem solar cell devices due to their high absorbability in the visible region with optimum bandgap energy.

  16. Chemical modifications of polymer films induced by high energy heavy ions

    Science.gov (United States)

    Zhu, Zhiyong; Sun, Youmei; Liu, Changlong; Liu, Jie; Jin, Yunfan

    2002-06-01

    Polymer films including polyethylene terephthalate (PET), polystyrene (PS) and polycarbonate (PC) were irradiated at room temperature with ions of 35 MeV/u 40Ar, 25 MeV/u 84Kr, 15.1 MeV/u 136Xe and 11.4 MeV/u 238U to fluences ranging from 9×10 9 to 5.5×10 12 ions/cm 2. The radiation-induced chemical changes of the materials were investigated by Fourier-transform infrared (FTIR) and ultraviolet/visible spectroscopies. It is found that the absorbance in the ultraviolet and visible range induced by all irradiations follows a linear relationship with fluence. The radiation-induced absorbance normalized to one particle increases slowly with increasing of electronic energy loss below about 8 keV/nm followed by a sharp increase up to about 15 keV/nm above which saturation is reached. FTIR measurements reveal that the materials suffer serious degradation through bond breaking. The absorbance of the typical infrared bands decays exponentially with increase of ion fluence and the bond-disruption cross-section shows a sigmoid variation with electronic energy loss. In PET loss of crystallinity is attributed to the configuration transformation of the ethylene glycol residue from trans into the gauche. Alkyne end groups are induced in all the materials above certain electronic energy loss threshold, which is found to be about 0.8 keV/nm for PS and 0.4 keV/nm for PC. The production cross-section of alkyne end group increases with increasing of electronic energy loss and shows saturation at high electronic energy loss values. It is concluded that not only the physical processes but also the chemical processes of the energy deposition determine the modification of polymer.

  17. Chemical modifications of polymer films induced by high energy heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Zhiyong E-mail: zyzhu@impcas.ac.cn; Sun Youmei; Liu Changlong; Liu Jie; Jin Yunfan

    2002-06-01

    Polymer films including polyethylene terephthalate (PET), polystyrene (PS) and polycarbonate (PC) were irradiated at room temperature with ions of 35 MeV/u {sup 40}Ar, 25 MeV/u {sup 84}Kr, 15.1 MeV/u {sup 136}Xe and 11.4 MeV/u {sup 238}U to fluences ranging from 9x10{sup 9} to 5.5x10{sup 12} ions/cm{sup 2}. The radiation-induced chemical changes of the materials were investigated by Fourier-transform infrared (FTIR) and ultraviolet/visible spectroscopies. It is found that the absorbance in the ultraviolet and visible range induced by all irradiations follows a linear relationship with fluence. The radiation-induced absorbance normalized to one particle increases slowly with increasing of electronic energy loss below about 8 keV/nm followed by a sharp increase up to about 15 keV/nm above which saturation is reached. FTIR measurements reveal that the materials suffer serious degradation through bond breaking. The absorbance of the typical infrared bands decays exponentially with increase of ion fluence and the bond-disruption cross-section shows a sigmoid variation with electronic energy loss. In PET loss of crystallinity is attributed to the configuration transformation of the ethylene glycol residue from trans into the gauche. Alkyne end groups are induced in all the materials above certain electronic energy loss threshold, which is found to be about 0.8 keV/nm for PS and 0.4 keV/nm for PC. The production cross-section of alkyne end group increases with increasing of electronic energy loss and shows saturation at high electronic energy loss values. It is concluded that not only the physical processes but also the chemical processes of the energy deposition determine the modification of polymer.

  18. Interface chemical states of NiO/NiFe films and their effects on magnetic properties

    Institute of Scientific and Technical Information of China (English)

    于广华; 柴春林; 朱逢吾; 赖武彦

    2002-01-01

    Ta/NiOx/Ni81Fe19/Ta multilayers were prepared by rf reactive and dc magnetron sputtering.The exchange coupling field (Hex) and the coercivity (Hc) of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied.The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that the ratio of Ar to O2 has great effect on the nickel chemical states in NiOx film.When the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa,the x value is approximately 1 and the valence of nickel is +2.At this point,NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7,the exchange coupling field (Hex) will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx/NiFe,while the coercivity (Hc) will increase due to the metallic Ni.XPS studies also show that there are two thermodynamically favorable reactions at the NiO/NiFe interface: NiO+Fe=Ni+FeO and 3NiO+2Fe=3Ni+Fe2O3.These interface reaction products are magnetic impurities at the interface region of NiO/NiFe.It is believed that these magnetic impurities would have effect on the exchange coupling field (Hex) and the coercivity (Hc) of NiO/NiFe.

  19. Optimization of processing and modeling issues for thin film solar cell devices: Final report, February 3, 1997--September 1, 1998

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    2000-02-28

    This final report describes results achieved under a 20-month NREL subcontract to develop and understand thin-film solar cell technology associated to CuInSe{sub 2} and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE's long-range efficiency, reliability and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development and improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to device structure and module encapsulation.

  20. Characterization and application of PBA fiber optic chemical film sensor based on fluorescence multiple quenching

    Institute of Scientific and Technical Information of China (English)

    陈坚; 李伟; 阎超; 袁立懋; 郭炬亮; 周新继

    1997-01-01

    The three types of structure of the pyrenebutyric acid of fiber optic chemical film sensor were stud-ied by fluorescence multiple quenching. They are, for different test samples and purposes, respectively general, three-way and combined. A tri-cup method was designed to demonstrate the multiple quenching of response mechanism, and a relationship formula of mathematical approach was established. The response mechanism was shown to include the dynamic quenching , inner-filter effects and/or resonance energy transfer. To show the response characterization in a series of organic and inorganic quenchers, a new concept of apparent quenching coefficient Kq was advanced. This kind of sensor has been used in continuous and in situ monitoring of the dissolution rate of drug tablets, on line and in situ monitoring of some organic therapeutic drugs in biological fluid and Cr( VI ) in industrial waste water. The measured data were examined and compared with HPLC or HPTLCS. Test results show that the sensors and appa

  1. Femtosecond Transient Absorption Studies in Cadmium Selenide Nanocrystal Thin Films Prepared by Chemical Bath Deposition Method

    Directory of Open Access Journals (Sweden)

    M. C. Rath

    2007-01-01

    Full Text Available Dynamics of photo-excited carrier relaxation processes in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method have been studied by nondegenerate femtosecond transient pump-probe spectroscopy. The carriers were generated by exciting at 400 nm laser light and monitored by several other wavelengths. The induced absorption followed by a fast bleach recovery observed near and above the bandgap indicates that the photo-excited carriers (electrons are first trapped by the available traps and then the trapped electrons absorb the probe light to show a delayed absorption process. The transient decay kinetics was found to be multiexponential in nature. The short time constant, <1 picosecond, was attributed to the trapping of electrons by the surface and/or deep traps and the long time constant, ≥20 picoseconds, was due to the recombination of the trapped carriers. A very little difference in the relaxation processes was observed in the samples prepared at bath temperatures from 25∘C to 60∘C.

  2. Microstructure and chemical bond evolution of diamond-like carbon films machined by femtosecond laser

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing; Wang, Chunhui [Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072 (China); Liu, Yongsheng, E-mail: yongshengliu@nwpu.edu.cn [Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072 (China); Cheng, Laifei [Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072 (China); Li, Weinan [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 10068 (China); Zhang, Qing [Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072 (China); Yang, Xiaojun [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 10068 (China)

    2015-06-15

    Highlights: • The machining depth was essentially proportional to the laser power. • The well patterned microgrooves and ripple structures with nanoparticles were formed distinctly in the channels. And the number of nanoparticles increased with the processing power as well. • It revealed a conversion from amorphous carbon to nanocrystalline graphite after laser treated with increasing laser power. • It showed that a great decrease of sp{sup 3}/sp{sup 2} after laser treatment. - Abstract: Femtosecond laser is of great interest for machining high melting point and hardness materials such as diamond-like carbon, SiC ceramic, et al. In present work, the microstructural and chemical bond evolution of diamond-like carbon films were investigated using electron microscopy and spectroscopy techniques after machined by diverse femtosecond laser power in air. The results showed the machining depth was essentially proportional to the laser power. The well patterned microgrooves and ripple structures with nanoparticles were formed distinctly in the channels. Considering the D and G Raman band parameters on the laser irradiation, it revealed a conversion from amorphous carbon to nanocrystalline graphite after laser treated with increasing laser power. X-ray photoelectron spectroscopy analysis showed a great decrease of sp{sup 3}/sp{sup 2} after laser treatment.

  3. Continuous production of carbon nanotubes and diamond films by swirled floating catalyst chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    S.E. Iyuke

    2010-01-01

    Full Text Available Various techniques for the synthesis of carbon nanotubes (CNTs are being developed to meet an increasing demand as a result of their versatile applications. Swirled floating catalyst chemical vapour deposition (SFCCVD is one of these techniques. This method was used to synthesise CNTs on a continuous basis using acetylene gas as a carbon source, ferrocene dissolved in xylene as a catalyst precursor, and both hydrogen and argon as carrier gases. Transmission electron microscopy analyses revealed that a mixture of single and multi-wall carbon nanotubes and other carbon nanomaterials were produced within the pyrolytic temperature range of 900–1 100°C and acetylene flow rate range of 118–370 ml min–1. Image comparison of raw and purified products showed that low contents of iron particles and amorphous carbon were contained in the synthesised carbon nanotubes. Diamond films were produced at high ferrocene concentration, hydrogen flow rate and pyrolysis temperatures, while carbon nanoballs were formed and attached to the surface of theCNTs at low ferrocene content and low pyrolysis temperature.

  4. Effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kwong, Philip; Seidel, Scott; Gupta, Malancha, E-mail: malanchg@usc.edu [Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089 (United States)

    2015-05-15

    In this work, the effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films was studied using x-ray photoelectron spectroscopy. The polymerizations of 4-vinyl pyridine and 1H,1H,2H,2H-perfluorodecyl acrylate were studied using copper(II) chloride (CuCl{sub 2}) and iron(III) chloride (FeCl{sub 3}) as the transition metal salts. It was found that the surface coverages of both poly(4-vinyl pyridine) (P4VP) and poly(1H,1H,2H,2H-perfluorodecyl acrylate) were decreased on CuCl{sub 2}, while the surface coverage of only P4VP was decreased on FeCl{sub 3}. The decreased polymer surface coverage was found to be due to quenching of the propagating radicals by the salt, which led to a reduction of the oxidation state of the metal. The identification of this reaction mechanism allowed for tuning of the effectiveness of the salts to decrease the polymer surface coverage through the adjustment of processing parameters such as the filament temperature. Additionally, it was demonstrated that the ability of transition metal salts to decrease the polymer surface coverage could be extended to the fabrication of patterned cross-linked coatings, which is important for many practical applications such as sensors and microelectronics.

  5. Biodegradable films and spray coatings as eco-friendly alternative to petro-chemical derived mulching films

    Directory of Open Access Journals (Sweden)

    G. Vox

    2013-09-01

    Full Text Available The use of plastic mulching films in horticulture causes the serious drawback of huge amount of wastes to be disposed of at the end of their lifetime. Several pre-competitive research products based on raw materials coming from renewable sources were recently developed to be used as biodegradable materials for soil mulching. Biodegradable materials are designed in order both to retain their mechanical and physical properties during their using time and to degrade at the end of their lifetime. These materials can be integrated directly in the soil in order to biodegrade because the bacterial flora transforms them in carbon dioxide or methane, water and biomass. The innovative materials can be obtained using natural polymers, such as starch, cellulose, chitosan, alginate and glucomannan. Biodegradable extruded mulching films were performed by means of thermo-plasticizing process. Spray mulch coatings were realized directly in field, by spraying water solutions based on natural polysaccharides, thus covering the cultivated soil with a protective thin geo-membrane. In this paper an overview on the formulation development, processing understanding, field performance, mechanical and radiometric properties of these innovative materials for soil mulching is presented. In field the biodegradable mulching films showed suitable mechanical properties if compared to the low density polyethylene films. The radiometric properties and their effect on the temperature condition and on weed control in the mulched soil were evaluated too. At the end of their lifetime the biodegradable materials were shattered and buried into the soil together with plants.

  6. Chemical modification of chitosan film via surface grafting of citric acid molecular to promote the biomineralization

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang, E-mail: liuyang@cczu.edu.cn [Institute of Biomedical Engineering and Health Sciences, Changzhou University, Changzhou 213164 (China); Engineering Research Center of Nano-Geo Materials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Shen, Xin; Zhou, Huan [Institute of Biomedical Engineering and Health Sciences, Changzhou University, Changzhou 213164 (China); Wang, Yingjun [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Deng, Linhong, E-mail: dlh@cczu.edu.cn [Institute of Biomedical Engineering and Health Sciences, Changzhou University, Changzhou 213164 (China)

    2016-05-01

    Graphical abstract: - Highlights: • Chitosan film was modified by surface grafting of citric acid. • The modified film has good hydrophilicity and moisture-retaining capacity. • The citric acid grafting treatment significantly promote the biomineralization. • MC3T3-E1 osteoblasts research confirms the biocompatibility of the film. - Abstract: We develop a novel chitosan–citric acid film (abbreviated as CS–CA) suitable for biomedical applications in this study. In this CS–CA film, the citric acid, which is a harmless organic acid has been extensively investigated as a modifying agent on carbohydrate polymers, was cross-linked by 1-Ethyl-3-(3-dimethyl aminopropyl) carbodiimide (EDC) and N-hydroxysuccinimide (NHS) onto the surface of chitosan (CS) film. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) confirms the graft copolymerization of the modified chitosan film (CS–CA). Surface wettability, moisturizing performance, the capacity of mineralization in vitro and biocompatibility of the films were characterized. After modification, this CS–CA film has good hydrophilicity. It is very evident that the citric acid grafting treatment significantly promotes the biomineralization of the chitosan based substrates. Cell experiments show that the MC3T3-E1 osteoblasts can adhere and proliferate well on the surface of CS–CA film. This CS–CA film, which can be prepared in large quantities and at low cost, should have potential application in bone tissue engineering.

  7. Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

    Science.gov (United States)

    Blumenstein, Nina J; Hofmeister, Caroline G; Lindemann, Peter; Huang, Cheng; Baier, Johannes; Leineweber, Andreas; Wöll, Christof; Schimmel, Thomas

    2016-01-01

    Summary In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiOx surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002) texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). Infrared spectroscopy (IR) measurements were used to investigate the polystyrene brushes before and after modification. PMID:26925358

  8. Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films

    Science.gov (United States)

    Heinselman, Karen N.; Brown, Richard J.; Shealy, James R.

    2017-10-01

    Hot-wall low pressure chemical vapor deposition (LPCVD) of highly crystalline epitaxial thin-film AlN grown on silicon (1 1 1) substrates is reported for the first time. Deposition was carried out in a modified commercial LPCVD at 1000 °C and 2 torr. Preflow time for the aluminum precursor, trimethylaluminum, was varied to nucleate Al, and the resulting variation in X-ray diffraction (XRD) crystalline AlN peaks is presented. With a 30 s dichlorosilane (SiH2Cl2) pretreatment at 700 °C and the optimal TMAl preflow time, the FWHM of the resulting film was 1116 arcsec for the AlN (0 0 2) 2 θ - ω peak, and the AlN (0 0 2) peak had an omega rocking curve FWHM of 1.6°. This AlN film was shown to be epitaxially aligned to the Si (1 1 1) substrate.

  9. Microstructural modification of nc-Si/SiO{sub x} films during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.W. [State Key Laboratory of Silicon Materials Science, Zhejiang University, Hangzhou 310027 (China)

    2005-07-01

    Nanocrystalline-silicon embedded silicon oxide films are prepared by plasma-enhanced chemical vapor deposition (PECVD) at 300 C without post-heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film deposition. The silica network with a high oxide state is suggested to be formed directly under the abduction of the former deposited layer, rather than processing repeatedly from the original low-oxide state of silica. Nanocrystalline silicon particles with a size of 6-10 nm are embedded in the SiO{sub x} film matrix, indicating the potential application in Si-based optoelectronic integrity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Strain and chemical function decoration induced quantum spin Hall effect in 2D silicene and Sn film

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Guohua; Zhang, Yun; Cao, Juexian, E-mail: jxcao@xtu.edu.cn

    2015-07-17

    The topologi