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Sample records for chemical etching survey

  1. Analytical model of plasma-chemical etching in planar reactor

    Science.gov (United States)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.; Kireev, V. Yu; Vasileva, O. V.

    2016-09-01

    The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.

  2. Chemical etching of deformation sub-structures in quartz

    Science.gov (United States)

    Wegner, M. W.; Christie, J. M.

    1983-02-01

    Chemical etching of dislocations has been studied in natural and synthetic quartz single crystals, in deformed synthetic quartz and in naturally and experimentally deformed quartzites. The ability of different etchants to produce polished or preferentially etched surfaces on quartz is described. Dislocation etching was achieved on all crystal planes examined by using a saturated solution of ammonium bifluoride as the etchant. Appropriate etching times were determined for etching quartzites for grain size, subgrain boundaries, deformation lamellae, dislocations and twins. Growth and polished surfaces of synthetic single crystal quartz were similarly etched and dislocation etch pits, characteristic of various orientations were found. The use of ammonium bifluoride proved to be expecially advantageous for the basal plane, producing a polished surface with etch pits, suitable for dislocation etch pit counting. “Double” etch pits have been found on Dauphiné twin boundaries on the basal plane and the first order prism, using this etchant. Slip lines and deformation bands were suitably etched on deformed synthetic crystal surfaces for identification of the slip planes. Other acidic etchants have been explored and their application to the study of deformation structures in quartz crystals is discussed.

  3. Silicon nanowire photodetectors made by metal-assisted chemical etching

    Science.gov (United States)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  4. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h‑1) is in reasonable agreement with that detected in the experiments (24 µm · h‑1).

  5. Synthesis and chemical etching of Te/C nanocables

    Indian Academy of Sciences (India)

    Guang Sheng Cao; Yong Gang Liu; Wen Wu Yang; Chang Tan; Hui Li; Xiao Juan Zhang

    2011-10-01

    In this paper, Te/C nanocables were fabricated by a hydrothermal method in the presence of cetyltrimethylammonium bromide (CTAB). The products were characterized in detail by multiform techniques: transmission electron microscopy, X-ray diffraction, energy-dispersive X-ray analysis and Fourier transform infrared (FTIR) spectroscopy. The results showed that the products were nanocables with lengths of several microns, core about 20 nm in diameter, and a surrounding sheath of about 60–80 nm in thickness. Te/C nanocables were tailored freely by chemical etching. Carbonaceous nanotubes and Te/C nanocables with fragmentary Te core were obtained by adjusting time of chemical etching.

  6. Chemical etching to dissolve dislocation cores in multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gregori, N.J. [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom); Murphy, J.D., E-mail: john.murphy@materials.ox.ac.uk [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom); Sykes, J.M.; Wilshaw, P.R. [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom)

    2012-08-01

    Multicrystalline silicon wafers are used for approximately half of all solar cells produced at present. These wafers typically have dislocation densities of up to {approx}10{sup 6} cm{sup -2}. Dislocations and associated impurities act as strong recombination centres for electron-hole pairs and are one of the major limiting factors in multicrystalline silicon substrate performance. In this work we have explored the possibility of using chemical methods to etch out the cores of dislocations from mc-Si wafers. We aim to maximise the aspect ratio of the depth of the etched structure to its diameter. We first investigate the Secco etch (1K{sub 2}Cr{sub 2}O{sub 7} (0.15 M): 2HF (49%)) as a function of time and temperature. This etch removes material from dislocation cores much faster than grain boundaries or the bulk, and produces tubular holes at dislocations. Aspect ratios of up to {approx}7:1 are achieved for {approx}15 {mu}m deep tubes. The aspect ratio decreases with tube depth and for {approx}40 {mu}m deep tubes is just {approx}2:1, which is not suitable for use in bulk multicrystalline silicon photovoltaics. We have also investigated a range of etches based on weaker oxidising agents. An etch comprising 1I{sub 2} (0.01 M): 2HF (49%) attacked dislocation cores, but its etching behaviour was extremely slow (<0.1 {mu}m/h) and the pits produced had a low aspect ratio (<2:1).

  7. Surface Modification of Nitinol by Chemical and Electrochemical Etching

    Science.gov (United States)

    Yang, Zhendi; Wei, Xiaojin; Cao, Peng; Gao, Wei

    2013-07-01

    In this paper, Nitinol, an equiatomic binary alloy of nickel and titanium, was surface modified for its potential biomedical applications by chemical and electrochemical etching. The main objective of the surface modification is to reduce the nickel content on the surface of Nitinol and simultaneously to a rough surface microstructure. As a result, better biocompatibility and better cell attachment would be achieved. The effect of the etching parameters was investigated, using scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometry (EDX) and X-ray photoelectron spectrometry (XPS). The corrosion property of modified Nitinol surfaces was investigated by electrochemical work station. After etching, the Ni content in the surface layer has been reduced and the oxidation of Ti has been enhanced.

  8. Results from modeling and simulation of chemical downstream etch systems

    Energy Technology Data Exchange (ETDEWEB)

    Meeks, E.; Vosen, S.R.; Shon, J.W.; Larson, R.S.; Fox, C.A.; Buchenauer

    1996-05-01

    This report summarizes modeling work performed at Sandia in support of Chemical Downstream Etch (CDE) benchmark and tool development programs under a Cooperative Research and Development Agreement (CRADA) with SEMATECH. The Chemical Downstream Etch (CDE) Modeling Project supports SEMATECH Joint Development Projects (JDPs) with Matrix Integrated Systems, Applied Materials, and Astex Corporation in the development of new CDE reactors for wafer cleaning and stripping processes. These dry-etch reactors replace wet-etch steps in microelectronics fabrication, enabling compatibility with other process steps and reducing the use of hazardous chemicals. Models were developed at Sandia to simulate the gas flow, chemistry and transport in CDE reactors. These models address the essential components of the CDE system: a microwave source, a transport tube, a showerhead/gas inlet, and a downstream etch chamber. The models have been used in tandem to determine the evolution of reactive species throughout the system, and to make recommendations for process and tool optimization. A significant part of this task has been in the assembly of a reasonable set of chemical rate constants and species data necessary for successful use of the models. Often the kinetic parameters were uncertain or unknown. For this reason, a significant effort was placed on model validation to obtain industry confidence in the model predictions. Data for model validation were obtained from the Sandia Molecular Beam Mass Spectrometry (MBMS) experiments, from the literature, from the CDE Benchmark Project (also part of the Sandia/SEMATECH CRADA), and from the JDP partners. The validated models were used to evaluate process behavior as a function of microwave-source operating parameters, transport-tube geometry, system pressure, and downstream chamber geometry. In addition, quantitative correlations were developed between CDE tool performance and operation set points.

  9. Microelectrode array fabrication by electrical discharge machining and chemical etching.

    Science.gov (United States)

    Fofonoff, Timothy A; Martel, Sylvain M; Hatsopoulos, Nicholas G; Donoghue, John P; Hunter, Ian W

    2004-06-01

    Wire electrical discharge machining (EDM), with a complementary chemical etching process, is explored and assessed as a method for developing microelectrode array assemblies for intracortically recording brain activity. Assembly processes based on these methods are highlighted, and results showing neural activity successfully recorded from the brain of a mouse using an EDM-based device are presented. Several structures relevant to the fabrication of microelectrode arrays are also offered in order to demonstrate the capabilities of EDM.

  10. Chemical-mechanical planarization aided dimple etching for self alignment.

    Science.gov (United States)

    Jeong, Moonki; Choi, Sungha; Guo, Yongchang; Park, Jaehong; Jeong, Haedo

    2012-04-01

    Through silicon via (TSV) technology is becoming a mainstream method of building 3-dimensional integrated circuits (3D IC). In particular, TSV Cu CMP is a critical process to remove excess Cu and makes a planar surface which requires a removal rate higher than 5 microm/min and a dishing lower than 0.3 microm. This paper focuses on the development of a new self-alignment method using dimples on the TSV Cu back surface. We tried to find an application potential of a bump-dimple structure for self alignment using a pretest tool of a solder ball array structure. Chemical-mechanical planarization (CMP) aided dimple etching is carefully studied as a key solution for deep and uniform dimple formation. The experiment shows that CMP is an excellent process to generate a clean oxide surface and a clear dishing on the Cu TSV, resulting in a seed for etching. Finally, etching realizes a uniform dimple depth of 7 microm to 9 microm in spite of changes of via diameter from 10 microm to 50 microm after only 15 sec etching.

  11. Non-Lithographic Silicon Micromachining Using Inkjet and Chemical Etching

    Directory of Open Access Journals (Sweden)

    Sasha Hoshian

    2016-12-01

    Full Text Available We introduce a non-lithographical and vacuum-free method to pattern silicon. The method combines inkjet printing and metal assisted chemical etching (MaCE; we call this method “INKMAC”. A commercial silver ink is printed on top of a silicon surface to create the catalytic patterns for MaCE. The MaCE process leaves behind a set of silicon nanowires in the shape of the inkjet printed micrometer scale pattern. We further show how a potassium hydroxide (KOH wet etching process can be used to rapidly etch away the nanowires, producing fully opened cavities and channels in the shape of the original printed pattern. We show how the printed lines (width 50–100 µm can be etched into functional silicon microfluidic channels with different depths (10–40 µm with aspect ratios close to one. We also used individual droplets (minimum diameter 30 µm to produce cavities with a depth of 60 µm and an aspect ratio of two. Further, we discuss using the structured silicon substrate as a template for polymer replication to produce superhydrophobic surfaces.

  12. The wettability between etching solutions and the surface of multicrystalline silicon wafer during metal-assisted chemical etching process

    Science.gov (United States)

    Niu, Y. C.; Liu, Z.; Liu, X. J.; Gao, Y.; Lin, W. L.; Liu, H. T.; Jiang, Y. S.; Ren, X. K.

    2017-01-01

    In order to investigate the wettability of multicrystalline silicon (mc-Si) with the etching solutions during metal-assisted chemical etching process, different surface structures were fabricated on the p-type multi-wire slurry sawn mc-Si wafers, such as as-cut wafers, polished wafers, and wafers etched in different solutions. The contact angles of different etching solutions on the surfaces of the wafers were measured. It was noted that all contact angles of etching solutions were smaller than the corresponding ones of deionized water, but the contact angles of different etching solutions were quite different. Among the contact angles of the etching solutions of AgNO3-HF, H2O2-HF, TMAH and HNO3-HF, the contact angle of TMAH solution was much larger than the others and that of HNO3-HF solution was much smaller. It is suggested that the larger contact angle may lead to an unevenly etching of silicon wafer due to the long retention of big bubbles on the wafers in the etching reaction, which should be paid attention to and overcome.

  13. Etching and Chemical Control of the Silicon Nitride Surface.

    Science.gov (United States)

    Brunet, Marine; Aureau, Damien; Chantraine, Paul; Guillemot, François; Etcheberry, Arnaud; Gouget-Laemmel, Anne Chantal; Ozanam, François

    2017-01-25

    Silicon nitride is used for many technological applications, but a quantitative knowledge of its surface chemistry is still lacking. Native oxynitride at the surface is generally removed using fluorinated etchants, but the chemical composition of surfaces still needs to be determined. In this work, the thinning (etching efficiency) of the layers after treatments in HF and NH4F solutions has been followed by using spectroscopic ellipsometry. A quantitative estimation of the chemical bonds found on the surface is obtained by a combination of infrared absorption spectroscopy in ATR mode, X-ray photoelectron spectroscopy, and colorimetry. Si-F bonds are the majority species present at the surface after silicon nitride etching; some Si-OH and a few Si-NHx bonds are also present. No Si-H bonds are present, an unfavorable feature for surface functionalization in view of the interest of such mildly reactive groups for achieving stable covalent grafting. Mechanisms are described to support the experimental results, and two methods are proposed for generating surface SiH species: enriching the material in silicon, or submitting the etched surface to a H2 plasma treatment.

  14. Etch selectivity of a wet chemical formulation for premetal cleaning

    Science.gov (United States)

    Epton, Jeremy W.; Jarrett, Deborah L.; Doohan, Ian J.

    2001-04-01

    This paper examines the relative etching rates of doped and thermal silicon dioxide when using NSSL etchant, comprising of a mixture of ammonium fluoride, water and ammonium dihydrogen phosphate [(NH4)H2PO4] and investigates their dependence on both temperature and mixture composition. The possible reaction mechanism is discussed and compared with the known mechanism for standard buffered oxide etchants (BOE). The observed etch selectivity and mechanisms of BOE and NSSL are also compared with the behavior of a third chemical formulation, referred to as mixed oxide etchant, which comprises of ammonium fluoride (NH4F) solution, diammonium hydrogen phosphate [(NH4)2HPO4] and orthophosphoric acid (H3PO4). It is concluded that no major change in oxide selectivity is observed if either BOE or NSSL etchants are used in the metal pre-clean process.

  15. Optimization of nanopores obtained by chemical etching on swift-ion irradiated lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Crespillo, M.L.; Otto, M.; Munoz-Martin, A. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Olivares, J. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Instituto de Optica, CSIC, C/Serrano 121, E-28006 Madrid (Spain)], E-mail: j.olivares@io.cfmac.csic.es; Agullo-Lopez, F. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de Materiales, Universidad Autonoma de Madrid (UAM) Cantoblanco, 28049 Madrid (Spain); Seibt, M. [IV. Physikalisches Institut, Universitaet Goettingen, Institut fuer Halbleiterphysik, Tammannstr. 1, D-37077 Goettingen (Germany); Toulemonde, M. [Centre Interdisciplinaire de Recherche Ions-Lasers, UMR 11 CEA-CNRS, 14040 Caen Cedex (France); Trautmann, C. [Gesellschaft fuer Schwerionenforschung (GSI), Materialforschung, Planckstrasse 1, 64291 Darmstadt (Germany)

    2009-03-15

    The morphology of the nanopores obtained by chemical etching on ion-beam irradiated LiNbO{sub 3} has been investigated for a variety of ions (F, Br, Kr, Cu, Pb), energies (up to 2300 MeV), and stopping powers (up to 35 keV/nm) in the electronic energy loss regime. The role of etching time and etching agent on the pore morphology, diameter, depth, and shape has also been studied. The transversal and depth profiles of the pore have been found to be quite sensitive to both irradiation and etching parameters. Moreover, two etching regimes with different morphologies and etching rates have been identified.

  16. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gosalvez, M.A.; Foster, A.S.; Nieminen, R.M

    2002-12-30

    Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches a maximum. The dependence of the anisotropy of the etching process on coverage, including the dependence of the fastest-etched plane orientation, is implicitly contained in the model and predictions of convex corner under-etching structures are made. We show that the whole etching process is controlled by only a few surface configurations involving a particular type of next-nearest neighbours. The relative value of the removal probabilities of these confitions determines the balance in the occurrence of step propagation and etch pitting for all surface orientations.

  17. Superhydrophobic coatings for aluminium surfaces synthesized by chemical etching process

    Directory of Open Access Journals (Sweden)

    Priya Varshney

    2016-10-01

    Full Text Available In this paper, the superhydrophobic coatings on aluminium surfaces were prepared by two-step (chemical etching followed by coating and one-step (chemical etching and coating in a single step processes using potassium hydroxide and lauric acid. Besides, surface immersion time in solutions was varied in both processes. Wettability and surface morphologies of treated aluminium surfaces were characterized using contact angle measurement technique and scanning electron microscopy, respectively. Microstructures are formed on the treated aluminium surfaces which lead to increase in contact angle of the surface (>150°. Also on increasing immersion time, contact angle further increases due to increase in size and depth of microstructures. Additionally, these superhydrophobic coatings show excellent self-cleaning and corrosion-resistant behavior. Water jet impact, floatation on water surface, and low temperature condensation tests assert the excellent water-repellent nature of coatings. Further, coatings are to be found mechanically, thermally, and ultraviolet stable. Along with, these coatings are found to be excellent regeneration ability as verified experimentally. Although aforesaid both processes generate durable and regenerable superhydrophobic aluminium surfaces with excellent self-cleaning, corrosion-resistant, and water-repellent characteristics, but one-step process is proved more efficient and less time consuming than two-step process and promises to produce superhydrophobic coatings for industrial applications.

  18. Deep and vertical silicon bulk micromachining using metal assisted chemical etching

    Science.gov (United States)

    Zahedinejad, Mohammad; Delaram Farimani, Saeed; Khaje, Mahdi; Mehrara, Hamed; Erfanian, Alireza; Zeinali, Firooz

    2013-05-01

    In this paper, a newfound and simple silicon bulk micromachining process based on metal-assisted chemical etching (MaCE) is proposed which opens a whole new field of research in MEMS technology. This method is anisotropic and by controlling the etching parameters, deep vertical etching, relative to substrate surface, can be achieved in micrometer size for oriented Si wafer. By utilizing gold as a catalyst and a photoresist layer as the single mask layer for etching, 60 µm deep gyroscope micromachined structures have been fabricated for 2 µm features. The results indicate that MaCE could be the only wet etching method comparable to conventional dry etching recipes in terms of achievable etch rate, aspect ratio, verticality and side wall roughness. It also does not need a vacuum chamber and the other costly instruments associated with dry etching techniques.

  19. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    Science.gov (United States)

    Kakati, A.; Maji, D.; Das, S.

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µm thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C16H36FN) and tetra-n-butylammonium fluoride (C5H9NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µm min-1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5-15 gm l-1 of silicic acid (SiO2x H2O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µm etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures.

  20. Synthesis and Characterization of Chemically Etched Nanostructured Silicon

    KAUST Repository

    Mughal, Asad Jahangir

    2012-05-01

    Silicon is an essential element in today’s modern world. Nanostructured Si is a more recently studied variant, which has currently garnered much attention. When its spatial dimensions are confined below a certain limit, its optical properties change dramatically. It transforms from an indirect bandgap material that does not absorb or emit light efficiently into one which can emit visible light at room temperatures. Although much work has been conducted in understanding the properties of nanostructured Si, in particular porous Si surfaces, a clear understanding of the origin of photoluminescence has not yet been produced. Typical synthesis approaches used to produce nanostructured Si, in particular porous Si and nanocrystalline Si have involved complex preparations used at high temperatures, pressures, or currents. The purpose of this thesis is to develop an easier synthesis approach to produce nanostructured Si as well as arrive at a clearer understanding of the origin of photoluminescence in these systems. We used a simple chemical etching technique followed by sonication to produce nanostructured Si suspensions. The etching process involved producing pores on the surface of a Si substrate in a solution containing hydrofluoric acid and an oxidant. Nanocrystalline Si as well as nanoscale amorphous porous Si suspensions were successfully synthesized using this process. We probed into the phase, composition, and origin of photoluminescence in these materials, through the use of several characterization techniques. TEM and SEM were used to determine morphology and phase. FT-IR and XPS were employed to study chemical compositions, and steady state and time resolved optical spectroscopy techniques were applied to resolve their photoluminescent properties. Our work has revealed that the type of oxidant utilized during etching had a significant impact on the final product. When using nitric acid as the oxidant, we formed nanocrystalline Si suspensions composed of

  1. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    Science.gov (United States)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  2. Confined Chemical Etching for Electrochemical Machining with Nanoscale Accuracy.

    Science.gov (United States)

    Zhan, Dongping; Han, Lianhuan; Zhang, Jie; Shi, Kang; Zhou, Jian-Zhang; Tian, Zhao-Wu; Tian, Zhong-Qun

    2016-11-15

    and the photo- or electrogenerated etchant in the electrolyte solution, the diffusion distance of the etchant is confined to micro- or nanometer scale, which ensures the nanoscale accuracy of electrochemical machining. To focus on the "confinement" of chemical etching reactions, external physical-field modulations have recently been introduced into CELT by introducing various factors such as light field, force field, hydrodynamics, and so on. Meanwhile, kinetic investigations of the confined chemical etching (CCE) systems are established based on the finite element analysis and simulations. Based on the obtained kinetic parameters, the machining accuracy is tunable and well controlled. CELT is now applicable for 1D milling, 2D polishing, and 3D microfabrication with an accuracy at nanometer scale. CELT not only inherits all the advantages of electrochemical machining but also provides advantages over photolithography and nanoimprint for its applicability to different functional materials without involving any photocuring and thermoplastic resists. Although there are some technical problems, for example, mass transfer and balance, which need to be solved, CELT has shown its prospective competitiveness in electrochemical micromachining, especially in the semiconductor industry.

  3. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    Science.gov (United States)

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  4. Structural and light-emission modification in chemically-etched porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Navarro-Urrios, D.; Oton, C.J. [Departamento de Fisica Basica, University of La Laguna, Avda. Astrofisico Fco. Sanchez, La Laguna (Spain); INFM and Dipartimento di Fisica, University of Trento, Via Sommarive 14, Povo, Trento (Italy); Perez-Padron, C.; Lorenzo, E.; Capuj, N.E. [Departamento de Fisica Basica, University of La Laguna, Avda. Astrofisico Fco. Sanchez, La Laguna (Spain); Gaburro, Z.; Pavesi, L. [INFM and Dipartimento di Fisica, University of Trento, Via Sommarive 14, Povo, Trento (Italy)

    2005-06-01

    After electrochemical etching, we have made a study of the effects generated on p{sup +}-type porous silicon layers when they are left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we have monitored the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of photoluminescence and transmission electron microscopy measurements for different post-etching times. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  6. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

    Directory of Open Access Journals (Sweden)

    N. Okada

    2017-06-01

    Full Text Available We focused on inductively coupled plasma and reactive ion etching (ICP–RIE for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions. To determine the optimum chemical etching conditions, the flow rates of Ar and Cl2, ICP power, and chamber pressure were varied in the etching of c-plane GaN layers with stripe patterns. It was determined that the combination of Ar and Cl2 flow rates of 100 sccm, chamber pressure of 7 Pa, and ICP power of 800 W resulted in the most enhanced reaction, yielding distinctive GaN structures such as pillars with inverted mesa structures for c-plane GaN and a semipolar GaN layer with asymmetric inclined sidewalls. The selectivity and etching rate were also investigated.

  7. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

    Science.gov (United States)

    Okada, N.; Nojima, K.; Ishibashi, N.; Nagatoshi, K.; Itagaki, N.; Inomoto, R.; Motoyama, S.; Kobayashi, T.; Tadatomo, K.

    2017-06-01

    We focused on inductively coupled plasma and reactive ion etching (ICP-RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions. To determine the optimum chemical etching conditions, the flow rates of Ar and Cl2, ICP power, and chamber pressure were varied in the etching of c-plane GaN layers with stripe patterns. It was determined that the combination of Ar and Cl2 flow rates of 100 sccm, chamber pressure of 7 Pa, and ICP power of 800 W resulted in the most enhanced reaction, yielding distinctive GaN structures such as pillars with inverted mesa structures for c-plane GaN and a semipolar GaN layer with asymmetric inclined sidewalls. The selectivity and etching rate were also investigated.

  8. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

    Science.gov (United States)

    Jung, Younghun; Baik, Kwang Hyeon; Mastro, Michael A; Hite, Jennifer K; Eddy, Charles R; Kim, Jihyun

    2014-08-14

    Wet chemical etching using hot KOH and H3PO4 solutions was performed on semipolar (11̄22) and nonpolar (11̄20) GaN films grown on sapphire substrates. An alternating KOH/H3PO4/KOH etch process was developed to control the orientation of the facets on the thin-film surface. The initial etch step in KOH produced c- and m-plane facets on the surface of both semipolar (11̄22) and nonpolar (11̄20) GaN thin-films. A second etch step in H3PO4 solution additionally exposed a (̄1̄12̄2) plane, which is chemically stable in H3PO4 solution. By repeating the chemical etch with KOH solution, the m-plane facets as seen in the original KOH etch step were recovered. The etching methods developed in our work can be used to control the surface morphologies of nonpolar and semipolar GaN-based optoelectronic devices such as light-emitting diodes and solar cells.

  9. Restoration of obliterated engraved marks on steel surfaces by chemical etching reagent.

    Science.gov (United States)

    Song, Qingfang

    2015-05-01

    Chemical etching technique is widely used for restoration of obliterated engraved marks on steel surface in the field of public security. The consumed thickness of steel surface during restoration process is considered as a major criterion for evaluating the efficiency of the chemical etching reagent. The thinner the consumed thickness, the higher the restoration efficiency. According to chemical principles, maintaining the continuous oxidative capabilities of etching reagents and increasing the kinetic rate difference of the reaction between the engraved and non-engraved area with the chemical etching reagent can effectively reduce the consumed steel thickness. The study employed steel surface from the engine case of motorcycle and the car frame of automobile. The chemical etching reagents are composed of nitric acid as the oxidizer, hydrofluoric acid as the coordination agent and mixed with glacial acetic acid or acetone as the solvents. Based on the performance evaluation of three different etching reagents, the one composed of HNO3, HF and acetone gave the best result.

  10. Chemical banding revealed by chemical etching in a cold-rolled metastable stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Celada, C., E-mail: c.celada@cenim.csic.es [MATERALIA Research Group, Department of Physical Metallurgy, Centro Nacional de Investigaciones Metalúrgicas (CENIM-CSIC), Av. Gregorio del Amo 8, 28040 Madrid (Spain); Toda-Caraballo, I., E-mail: it247@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Kim, B., E-mail: bnk20@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); San Martín, D., E-mail: dsm@cenim.csic.es [MATERALIA Research Group, Department of Physical Metallurgy, Centro Nacional de Investigaciones Metalúrgicas (CENIM-CSIC), Av. Gregorio del Amo 8, 28040 Madrid (Spain)

    2013-10-15

    The current work describes the metallographic characterization of the initial microstructure of a cold rolled precipitation hardening semi-austenitic stainless steel (12Cr–9Ni–4Mo–2Cu–1Ti, in wt.%). The use of the Lichtenegger and Blöch (L–B) color etching solution has been shown to reveal not only the phases present in the microstructure, but also the existence of chemical banding along the rolling direction. The L–B reagent has been found to color the microstructure in bands depending on what alloying elements have segregated to each band. Two-dimensional electron probe microanalysis (EPMA) maps have shown that Ni, Cu and Ti segregate together in the bands, while Cr has an opposite behavior. Mo has a mixed segregation behavior although much weaker than the other elements and more prompt to segregate like Ni does. A direct comparison of light optical micrographs with the EPMA maps of the same area of the microstructure has enable to establish a direct relationship between the alloying element band concentration and the resulting etching color contrast obtained with the L–B reagent. Thermodynamic calculations predict that solidification in this steel takes place with ferrite as the primary phase. Equilibrium partitioning coefficient calculations seem to support the observed segregation patterns. - Highlights: • A cold rolled metastable stainless steel has been characterized thoroughly. • EPMA shows that Ni, Cu and Ti segregate together; Cr in an opposite way. • L–B color etching is sensitive to the segregation of these chemical elements. • This chemical banding has been reduced by applying a homogenization heat treatment. • Partitioning coefficient calculations agree with the observed segregation patterns.

  11. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Science.gov (United States)

    Tamulevičius, Tomas; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-01

    We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6-12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet-visible light (UV-VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2-6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined processing employing aluminum mask resulted in nanocomposite material (DLC:Ag) micropatterns.

  12. Effects of chemical etching and functionalization times on the properties of Cu/polyimide films

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Kisoo; Hwang, Soomin; Lee, Changmin; Kim, Won; Lee, Seungmuk; Park, Geunchul; Jung, Seungboo; Joo, Jinho [Sungkyunkwan University, Suwon (Korea, Republic of); Lim, Junhyung [Stanford University, Stanford, CA (United States)

    2010-12-15

    We fabricated flexible Cu/Polyimide (PI) films by electroless- and electro-Cu plating on surface modified PI via chemical etching and functionalization, and investigated the effects of the modification time on the contact angle, surface energy and morphology, Pd catalyst amount on PI, and resultant peel strength between Cu/PI layers. Chemical etching and successive functionalization were performed on PI surfaces for 0 - 10 min, followed by electroless- and electro-Cu plating. Chemical etching effectively modified the PI surface from a hydrophobic to a hydrophilic state. In addition, chemical functionalization significantly increased the amount of Pd absorption on PI, which consequently enhanced the peel strength between Cu/PI. The peel strength of the resulting Cu/PI film processed by both chemical etching and functionalization for 5 min increased to 5.08 N/cm, which was 4.2 and 2.8 times higher than films processed with functionalization and etching alone, respectively. The highest strength that was achieved was a result of the combined effects of the increased work of adhesion and the increased Pd amount for both treatments; however, the amount of Pd was likely to be the more critical factor for the high level of adhesion between Cu/PI, rather than the work of adhesion.

  13. Fabrication of superhydrophobic and oleophobic Al surfaces by chemical etching and surface fluorination

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hak-Jong; Shin, Ju-Hyeon; Choo, Soyoung; Ryu, Sang-Woo; Kim, Yang-Doo; Lee, Heon, E-mail: heonlee@korea.ac.kr

    2015-06-30

    Hierarchical Al surfaces were fabricated using three different kinds of alkaline-based chemical etching processes. The surface morphology changes to a needle-like microstructure or to nanoscale flakes on a microscale porous structure depending on the chemical solution used. These surfaces were characterized by field-emission scanning electron microscopy, X-ray diffraction analysis, X-ray photoelectron spectroscopy, and contact angle measurements. After the hydrophobic treatment, the etched Al surface shows non-wetting properties, exhibiting a static contact angle over 150° and a dynamic contact angle less than 5° for deionized water. Oleophobic properties for diiodomethane and N,N-dimethylformamide are exhibited by all etched Al surfaces. - Highlights: • This research fabricated and analyzed the etched Al surface via a simple wet etching process. • The morphology of Al surface is changed according to the presence of Zn ions. • The wettability of Al surface is controlled by roughness and surface treatment. • Superhydrophobicity and superoleophobicity are achieved on the wet etched Al mesh.

  14. Effect of etchant concentration on microwave induced chemical etching (MICE) of CR-39 detector

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, G.S. [Health Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Tripathy, S.P., E-mail: sam.tripathy@gmail.com [Health Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Sharma, S.D. [Radiological Physics and Advisor Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Homi Bhabha National Institute, Mumbai 400094 (India); Bandyopadhyay, T. [Health Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Homi Bhabha National Institute, Mumbai 400094 (India)

    2015-11-11

    The recently introduced microwave induced chemical etching (MICE) has been found to be a fast and effective etching technique for CR-39 detector. In the present work, the MICE technique was used to develop the neutron induced recoil tracks in CR-39 detectors. Special attention was paid in carrying out a systematic investigation to study the effect of etchant concentration and microwave power on the development of tracks and various track parameters. NaOH solution of different concentrations, viz. 3–8 N was tested at 300, 450, 600 and 900 W of microwave power. Temperature profiles for 200 ml solution of each concentration were generated to maintain a fixed operating condition for all concentrations at each microwave power. The bulk etch rate was found to increase with the microwave power as well as with the etchant concentration. Empirical relations were established to relate the variation of bulk etch rate with microwave power and etchant concentration.

  15. Wet Etching of Heat Treated Atomic Layer Chemical Vapor Deposited Zirconium Oxide in HF Based Solutions

    Science.gov (United States)

    Balasubramanian, Sriram; Raghavan, Srini

    2008-06-01

    Alternative materials are being considered to replace silicon dioxide as gate dielectric material. Of these, the oxides of hafnium and zirconium show the most promise. However, integrating these new high-k materials into the existing complementary metal-oxide-semiconductor (CMOS) process remains a challenge. One particular area of concern is the wet etching of heat treated high-k dielectrics. In this paper, work done on the wet etching of heat treated atomic layer chemical vapor deposited (ALCVD) zirconium oxide in HF based solutions is presented. It was found that heat treated material, while refractory to wet etching at room temperature, is more amenable to etching at higher temperatures when methane sulfonic acid is added to dilute HF solutions. Selectivity over SiO2 is still a concern.

  16. The influence of chemical etching time on efficiency of radon detection using CR-39

    Energy Technology Data Exchange (ETDEWEB)

    Reway, Adriana P.; Kappke, Jaqueline; Narloch, Danielle C., E-mail: adrireway@hotmail.com, E-mail: jaquelinekappke@gmail.com, E-mail: daninarloch@hotmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Departamento Academico de Fisica; Del Claro, Flavia; Paschuk, Sergei A., E-mail: flaviadelclaro@gmail.com, E-mail: spaschuk@gmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Programa de Pos-Graduaca em Engenharia Eletrica e Informatica Industrial; Correa, Janine N., E-mail: janine_nicolosi@hotmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Departamento Academico de Construcao Civil

    2015-07-01

    Natural radiation is the principal source of human exposure to ionizing radiation. Radon is noble radioactive gas that emanates from the soil and rocks entering the atmosphere of dwellings where it could be accumulated. The inhalation of {sup 222}Rn represents a significant health risk. Solid-State Nuclear Track Detectors (SSNTD) represents an efficient method for alpha particle detection and measurements of the activity concentration of {sup 222}Rn. The aim of present work was to study the etching time impact on CR-39 efficiency in radon activity measurements. The investigation was performed using 80 CR-39 detectors, which were exposed to a source of radon. After the exposition, alpha particle tracks development was achieved by chemical etching using 6.25M NaOH solution and ethanol (2%) at 70°C. Etching alpha particle tracks were identified and counted manually using the optical microscope with magnification of 100x and glass overlay mask. The etching time ranged from 7 to 14 hours. The results show that there is an increase in the number of visible tracks with increased etching time. The number of traces obtained for 7 hours and 8 hours of revelation was 1430 +/- 90 and 2090 +/- 160, respectively. However, for etching time of 13 and 14 hours was not observed statistical increase in the number of visible tracks. The number of tracks in this situation was 3630 +/- 180 and 3870 +/- 160 to 13 and 14 hours etching. Thus, for assumed etching parameters, the etching optimal time was observed 14 hours. (author)

  17. Intrinsic Fabry-Perot Interferometeric Sensor Based on Microfiber Created by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Ruohui Wang

    2014-09-01

    Full Text Available An intrinsic Fabry-Perot interferometeric sensor based on a microfiber has been demonstrated. The micro-size suspended core is created by chemical etching a photonics crystal fiber, of which the cladding has a micrometer-spaced, hexagonal array of air holes. The sensing head is fabricated by chemical etching a short section of photonics crystal fiber spliced with a single mode fiber. The temperature sensing characteristic of the interferometer has also been demonstrated and a sensitivity 14.3 pm/°C is obtained.

  18. Surface passivation of silicon nanowires based metal nano-particle assisted chemical etching for photovoltaic applications

    Science.gov (United States)

    Ben Rabha, Mohamed; Khezami, Lotfi; Jemai, Abdelbasset Bessadok; Alhathlool, Raed; Ajbar, Abdelhamid

    2017-03-01

    Metal Nano-particle Assisted Chemical Etching (MNpACE) is an extraordinary developed wet etching method for producing uniform semiconductor nanostructure (silicon nanowires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs).The creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. The combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties especially a PL response at 640 nm are presented. As a results, the effective lifetime (τeff) and surface recombination velocity (Seff) evolution of SiNWs after stain etching treatment showed significant improvements and less than 1% reflectance was achieved over the wavelength range of 400-800 nm and more than 36% reduction was observed compared to untreated surface. It has, thus, been demonstrated that all these factors may lead to improved energy efficiency from 8% to nearly 14.2% for a cell with SiNWs treated in acid (HF/HNO3/H2O) solution.

  19. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    Science.gov (United States)

    Köllensperger, P. A.; Karl, W. J.; Ahmad, M. M.; Pike, W. T.; Green, M.

    2012-06-01

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant.

  20. Single crystal Fe elements patterned by one-step selective chemical wet etching

    NARCIS (Netherlands)

    Sun, Li; Wong, P.K.J.; Niu, Daxin; Zou, Xiao; Zhai, Ya; Wu, Jing; Xu, Yongbing; Zhai, Hongru

    2010-01-01

    A technique has been developed to pattern single crystal ultrathin Fe films by selective chemical wet etching of the Au capping layer and then simultaneous oxidization of the ferromagnetic Fe layer underneath. The focused magneto-optical Kerr effect and ferromagnetic resonance measurements demonstra

  1. NCMS PWB program report surface finishes team task WBS No. 3.1.1: Phase 1, Etching Studies: Chemical etching of copper for improved solderability

    Energy Technology Data Exchange (ETDEWEB)

    Stevenson, J.O.; Guilinger, T.R.; Hosking, F.M.; Yost, F.G.; Sorensen, N.R.

    1995-06-01

    Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in the area of printed wiring board materials and surface finishes. Improved solderability of copper substrates is an important component of the Sandia-NCMS program. We are investigating the effects of surface roughness on the wettability and solderability behavior of several different types of copper board finishes. In this paper, we present roughness and solderability characterizations for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable improvements in solder wettability were observed to accompany increases in roughness. A number of different algorithms and measures of roughness were used to gain insight into surface morphologies that lead to improved solderability.

  2. Use of chemical etching of CR-39 foils at elevated temperature for fast neutron personnel monitoring in India

    Science.gov (United States)

    Sathian, Deepa; Rohatgi, Rupali; Jayalakshmi, V.; Marathe, P. K.; Nair, Sarala; Kolekar, R. V.; Chourasiya, G.; Kannan, S.

    2009-06-01

    CR-39 Solid State Nuclear Track Detecting foils (SSNTD), along with 1 mm thick polyethylene radiator, sealed in triple laminated pouches, are used for country wide Fast Neutron Personnel Monitoring in India. With the present system of processing by elevated temperature electrochemical etching (ETECE) and evaluation using automatic image analysis, only 16 foils are processed at a time and it is useful over the dose equivalent range 0.2 mSv to 10 mSv. It has been reported that, by processing CR-39 of good detection efficiency by chemical etching at elevated temperature, more numbers of foils can be processed simultaneously. In the present study, CR-39 foils from Pershore Moulding (UK) have been chemically etched using 7 N KOH under various conditions of temperature and etching durations and evaluated using high magnification microscope. The duration of chemical etching, has been optimized at a constant temperature of 60°C for chemical etching process. The characteristics of the chemically etched CR-39 foils are compared with the characteristics of the CR-39 foils processed by the existing system of ETECE and the detailed results are presented in the full text of the paper. It has been observed that by chemical etching process, the dose equivalent range of CR-39 foils can be extended above 60 mSv.

  3. Evaluation of Cu Ion Concentration Effects on Cu Etching Rate in Chemical-Mechanical Polishing Slurry

    Science.gov (United States)

    Nishizawa, Hideaki; Sugiura, Osamu; Matsumura, Yoshiyuki; Kinoshita, Masaharu

    2007-04-01

    The effects of Cu ion concentration of the different solutions on Cu etching rate were investigated. From the dipping experiment of Cu substrates in different solutions of malic acid, hydrogen peroxide (H2O2), benzotriazole (BTA), and Cu ions, it was revealed that Cu etching rate is increased if the concentration of Cu(II) ions added in the solution is high. This is considered to be caused by the effect of Cu(II) ions on H2O2 molecules. In the solution of pH 7, the Cu etching rate increased markedly between 1.7× 10-4 and 3.4× 10-4 M Cu(II) ion concentrations. The maximum increase in the etching rate was from 990 to 2200 nm/min at a H2O2 concentration of 2 wt %. In the solution of pH 3, a marked change in the etching rate was not observed. Our results show that the concentration of Cu ions on the polishing pad in chemical-mechanical polishing (CMP) process is very important.

  4. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

    Science.gov (United States)

    Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

    2013-08-23

    Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

  5. Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon

    OpenAIRE

    Lingyu Kong; Binayak Dasgupta; Yi Ren; Parsian K. Mohseni; Minghui Hong; Xiuling Li; Wai Kin Chim; Sing Yang Chiam

    2016-01-01

    In this work, we investigate the transport processes governing the metal-assisted chemical etching (MacEtch) of silicon (Si). We show that in the oxidation of Si during the MacEtch process, the transport of the hole charges can be accomplished by the diffusion of metal ions. The oxidation of Si is subsequently governed by a redox reaction between the ions and Si. This represents a fundamentally different proposition in MacEtch whereby such transport is understood to occur through hole carrier...

  6. Metal-assisted chemical etching of CIGS thin films for grain size analysis

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

    2016-09-15

    Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Chemically Etched Silicon Nanowires as Anodes for Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    West, Hannah Elise [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This study focused on silicon as a high capacity replacement anode for Lithium-ion batteries. The challenge of silicon is that it expands ~270% upon lithium insertion which causes particles of silicon to fracture, causing the capacity to fade rapidly. To account for this expansion chemically etched silicon nanowires from the University of Maine were studied as anodes. They were built into electrochemical half-cells and cycled continuously to measure the capacity and capacity fade.

  8. Fabrication of ordered arrays of InP microstructures by wet chemical etching with Au masks.

    Science.gov (United States)

    Su, G; Guo, Q; Palmer, R E

    2002-12-01

    Ordered arrays of InP microstructures have been fabricated on InP(001) substrates by wet chemical etching in aqueous HCl with patterned Au masks. The masks were produced by Au deposition through copper grids or a monolayer of polystyrene microspheres. Square InP mesas (20 x 20 microns) and pillars (approximately 100 nm in both diameter and height) were both produced and characterized by scanning electron microscopy and atomic force microscopy.

  9. Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    R. W. Wu

    2016-02-01

    Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

  10. Fibre Laser Cutting and Chemical Etching of AZ31 for Manufacturing Biodegradable Stents

    Directory of Open Access Journals (Sweden)

    Ali Gökhan Demir

    2013-01-01

    Full Text Available The use of magnesium-alloy stents shows promise as a less intrusive solution for the treatment of cardiovascular pathologies as a result of the high biocompatibility of the material and its intrinsic dissolution in body fluids. However, in addition to requiring innovative solutions in material choice and design, these stents also require a greater understanding of the manufacturing process to achieve the desired quality with improved productivity. The present study demonstrates the manufacturing steps for the realisation of biodegradable stents in AZ31 magnesium alloy. These steps include laser microcutting with a Q-switched fibre laser for the generation of the stent mesh and subsequent chemical etching for the cleaning of kerf and surface finish. Specifically, for the laser microcutting step, inert and reactive gas cutting conditions were compared. The effect of chemical etching on the reduction in material thickness, as well as on spatter removal, was also evaluated. Prototype stents were produced, and the material composition and surface quality were characterised. The potentialities of combining nanosecond laser microcutting and chemical etching are shown and discussed.

  11. Nitric-phosphoric acid etching effects on the surface chemical composition of CdTe thin film.

    Science.gov (United States)

    Irfan, Irfan; Ding, Huanjun; Xia, Wei; Lin, Hao; Tang, Ching W.; Gao, Yongli

    2009-03-01

    Nitric-phosphoric (NP) acid etching has been regarded as one of the most successful methods for the formation of low resistance back contact with the metal electrode in CdTe based solar cells. We report back surface chemical composition for eight different durations of NP etching of CdTe polycrystalline thin film. We studied the surfaces with x-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IEPS) and atomic force microscopy (AFM). Etching dependence on the back surface composition and electronic structure was observed. Valence and conduction band shifts relative to the Fermi level of the system with different etching duration were analyzed. The sample was left in open ambient condition for three weeks and XPS data were obtained again in order to study the difference in surface chemical composition with the pristine CdTe film. Unetched and highly etched part of the sample were sputtered and the depth profile analyzed.

  12. Electrochemical nanoimprint lithography: when nanoimprint lithography meets metal assisted chemical etching.

    Science.gov (United States)

    Zhang, Jie; Zhang, Lin; Han, Lianhuan; Tian, Zhao-Wu; Tian, Zhong-Qun; Zhan, Dongping

    2017-06-08

    The functional three dimensional micro-nanostructures (3D-MNS) play crucial roles in integrated and miniaturized systems because of the excellent physical, mechanical, electric and optical properties. Nanoimprint lithography (NIL) has been versatile in the fabrication of 3D-MNS by pressing thermoplastic and photocuring resists into the imprint mold. However, direct nanoimprint on the semiconductor wafer still remains a great challenge. On the other hand, considered as a competitive fabrication method for erect high-aspect 3D-MNS, metal assisted chemical etching (MacEtch) can remove the semiconductor by spontaneous corrosion reaction at the metal/semiconductor/electrolyte 3-phase interface. Moreover, it was difficult for MacEtch to fabricate multilevel or continuously curved 3D-MNS. The question of the consequences of NIL meeting the MacEtch is yet to be answered. By employing a platinum (Pt) metalized imprint mode, we demonstrated that using electrochemical nanoimprint lithography (ECNL) it was possible to fabricate not only erect 3D-MNS, but also complex 3D-MNS with multilevel stages with continuously curved surface profiles on a gallium arsenide (GaAs) wafer. A concave microlens array with an average diameter of 58.4 μm and height of 1.5 μm was obtained on a ∼1 cm(2)-area GaAs wafer. An 8-phase microlens array was fabricated with a minimum stage of 57 nm and machining accuracy of 2 nm, presenting an excellent optical diffraction property. Inheriting all the advantages of both NIL and MacEtch, ECNL has prospective applications in the micro/nano-fabrications of semiconductors.

  13. Study of selective chemical downstream plasma etching of silicon nitride and silicon oxide for advanced patterning applications

    Science.gov (United States)

    Prévost, Emilie; Cunge, Gilles; De-Buttet, Côme; Lagrasta, Sebastien; Vallier, Laurent; Petit-Etienne, Camille

    2017-03-01

    The evolution of integrated components in the semiconductors industry is nowadays looking for ultra-high selective etching processes in order to etch high aspect ratio structures in complicated stacks of ultrathin layers. For ultra-high selective processes, typical plasma etching show limitations, while wet etching processes reach limitations due to capillary forces. For these reasons there is a great regain of interest today in chemical downstream etching systems (CDE), which combine the advantages of plasma and wet treatments. The absence of photons and ions allow to minimize damages and to achieve very high selectivity (in isotropic etching). In this work we investigated the parameters enabling to etch selectively the Si3N4 to the SiO2 by CDE. We shown that the correlation between the gas mixture and the wafer temperature is the key to obtain the desired selectivity. In order to optimize the processing window, the mixture composition (NF3/N2/O2/He) and the temperatures were screened by several DOE (Designs Of Experiments). Conditions are found in which the etching selectivity between the two silicon alloys is higher than 100, which allowed us to clean out sacrificial Si3N4 layers in very high aspect ratio (about 100) silicon trenches of nanometric size (60nm) without damaging the 10nm thin SiO2 caping layer (between the Si and the Si3N4). This demonstrates that downstream plasma etching can perform better than wet treatments in this case.

  14. KCN Chemical Etch for Interface Engineering in Cu2ZnSnSe4 Solar Cells

    OpenAIRE

    Buffiere, Marie; Brammertz, Guy; Sahayaraj, Sylvester; Batuk, Maria; KHELIFI, SAMIRA; Mangin, Denis; El Mel, Abdel-Aziz; Arzel, Ludovic; Hadermann, Joke; Meuris, Marc; Poortmans, Jef

    2015-01-01

    The removal of secondary phases from the surface of the kesterite crystals is one of the major challenges to improve the performances of Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells. In this Contribution, the KCN/KOH Chemical etching approach, originally developed for the removal of CuxSe phases in Cu(In,Ga)(S,Se)(2) thin films) is applied to CZTSe absorbers exhibiting various chemical compositions. Two distinct electrical behaviors were observed on CZTSe/CdS solar cells after treatment: (...

  15. Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Shiuh-Chuan HER

    2015-11-01

    Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

  16. 3D electrostatic actuator fabricated by non-ablative femtosecond laser exposure and chemical etching

    Directory of Open Access Journals (Sweden)

    Yang Tao

    2015-01-01

    Full Text Available We demonstrate the novel design of an electrostatic micro-actuator based on monolithic three-dimensional (3D shapes fabricated by non-ablative femtosecond laser exposure combined with chemical etching. Further, we present a single-scan stacking approach exploited in the fabrication of the 3D actuator to create crack-free, highcontrast, high fidelity and integrated micro-structures. Influential parameters: energy per pulse, polarization, scanning spacing and stacking directionwere systematically studied to predict and control the etching rate of 3D planes.Finally, we report the characterization of the actuator and its potential application in optomechanics to show a complete scenario of femtosecond laser machined integrated 3D micro-systems incorporating multiple functionalities.

  17. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  18. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

    Science.gov (United States)

    Bioud, Youcef A.; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-10-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  19. Characterization and Wettability of ZnO Film Prepared by Chemical Etching Method

    Institute of Scientific and Technical Information of China (English)

    GUO Hua-xi; JIA Hui-ying; ZENG Jian-bo; CONG Qian; REN Lu-quan

    2013-01-01

    ZnO thin films were prepared by a chemical etching method and their wettability was investigated.The structure and surface composition structure were characterized by means of scanning electron microscopy,X-ray photoelectronic spectrometry(XPS),X-ray diffraction(XRD) and Raman spectrometry.These analyses reveal that the etched films were large-scale micro-nanohierarchical structures composed of a Zn core and a ZnO coating.Superhydrophobic surfaces with water contact angles of over 150° were obtained by n-octadecanethiol(ODT) modification.The XPS and Raman results indicate that ODT molecules were bound to the ZnO surface with the S head group by forming Zn—S bond.

  20. KCN Chemical Etch for Interface Engineering in Cu2ZnSnSe4 Solar Cells.

    Science.gov (United States)

    Buffière, Marie; Brammertz, Guy; Sahayaraj, Sylvester; Batuk, Maria; Khelifi, Samira; Mangin, Denis; El Mel, Abdel-Aziz; Arzel, Ludovic; Hadermann, Joke; Meuris, Marc; Poortmans, Jef

    2015-07-15

    The removal of secondary phases from the surface of the kesterite crystals is one of the major challenges to improve the performances of Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells. In this contribution, the KCN/KOH chemical etching approach, originally developed for the removal of CuxSe phases in Cu(In,Ga)(S,Se)2 thin films, is applied to CZTSe absorbers exhibiting various chemical compositions. Two distinct electrical behaviors were observed on CZTSe/CdS solar cells after treatment: (i) the improvement of the fill factor (FF) after 30 s of etching for the CZTSe absorbers showing initially a distortion of the electrical characteristic; (ii) the progressive degradation of the FF after long treatment time for all Cu-poor CZTSe solar cell samples. The first effect can be attributed to the action of KCN on the absorber, that is found to clean the absorber free surface from most of the secondary phases surrounding the kesterite grains (e.g., Se0, CuxSe, SnSex, SnO2, Cu2SnSe3 phases, excepting the ZnSe-based phases). The second observation was identified as a consequence of the preferential etching of Se, Sn, and Zn from the CZTSe surface by the KOH solution, combined with the modification of the alkali content of the absorber. The formation of a Cu-rich shell at the absorber/buffer layer interface, leading to the increase of the recombination rate at the interface, and the increase in the doping of the absorber layer after etching are found to be at the origin of the deterioration of the FF of the solar cells.

  1. Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    陆敏; 常昕; 黎子兰; 杨志坚; 张国义; 章蓓

    2003-01-01

    High quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and threading dislocations in GaN films is studied by a scanning electron microscope (SEM) and a transmission-electron microscope (TEM). The SEM images of GaN films, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3) and molten KOH exhibit notably different, etching pit densities of 5 × 108/cm2 and 4 × 107/cm2, respectively, which probably indicate that more kinds of, etching pits were revealed when, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3). Cross section TEM of GaN films with different g vectors showed the portions of different threading dislocations. Theoretical calculation indicates that the lattice and thermal expansion coefficient mismatch may be the main origins of pure edge threading dislocations.

  2. 3D spirals with controlled chirality fabricated using metal-assisted chemical etching of silicon.

    Science.gov (United States)

    Hildreth, Owen J; Fedorov, Andrei G; Wong, Ching Ping

    2012-11-27

    The ability to fabricate 3D spiraling structures using metal-assisted chemical etching (MaCE) is one of the unique advantages of MaCE over traditional etching methods. However, control over the chirality of the spiraling structures has not been established. In this work, a systematic parametric study was undertaken for MaCE of star-shaped catalysts, examining the influence of arm shape, arm length, number of arms, center core diameter, and catalyst thickness on the rotation direction. This data was used to identify a set of geometric parameters that reliably induce rotation in a predefined direction such that large arrays of 3D spiraling structures can be fabricated with the same chirality. Electroless deposition into the MaCE template was used to examine the full etch path of the catalyst and an experimental fit was established to control rotation angle by adjusting the catalyst's center core diameter. The ability to fabricate large arrays of 3D spiraling structures with predefined chirality could have important applications in photonics and optoelectronics.

  3. Retention of proteins and metalloproteins in open tubular capillary electrochromatography with etched chemically modified columns.

    Science.gov (United States)

    Pesek, Joseph J; Matyska, Maria T; Salgotra, Vasudha

    2008-09-01

    Etched chemically modified capillaries with two different bonded groups (pentyl and octadecyl) are compared for their migration behavior of several common proteins and metalloproteins as well as metalloproteinases. Migration times, efficiency and peak shape are evaluated over the pH range of 2.1-8.1 to determine any effects of the bonded group on the electrochromatographic behavior of these compounds. One goal was to determine if the relative hydrophobicity of the stationary phase has a significant effect on proteins in the open tubular format of capillary electrochromatography as it does in HPLC. Reproducibility of the migration times is also investigated.

  4. Retention of Proteins and Metalloproteins in Open Tubular Capillary Electrochromatography with Etched Chemically Modified Columns

    Science.gov (United States)

    Pesek, Joseph J.; Matyska, Maria T.; Salgotra, Vasudha

    2010-01-01

    Etched chemically modified capillaries with two different bonded groups (pentyl and octadecyl) are compared for their migration behavior of several common proteins and metalloproteins as well as metalloproteinases. Migration times, efficiency and peak shape are evaluated over the pH range of 2.1 to 8.1 to determine any effects of the bonded group on the electrochromatographic behavior of these compounds. One goal was to determine if the relative hydrophobicity of the stationary phase has a significant effect on proteins in the open tubular format of capillary electrochromatography as it does in HPLC. Reproducibility of the migration times is also investigated. PMID:18850653

  5. Rocking curve FWHM maps of a chemically etched (0 0 1) oriented HPHT type Ib diamond crystal plate

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Y; Macrander, A T; Krasnicki, S; Chu, Y S; Maj, J; Assoufid, L; Qian, J [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2007-09-07

    Synchrotron radiation and a CCD detector were employed to map the full width at half maximum (FWHM) of rocking curves for a synthetic (0 0 1) oriented type Ib diamond plate. The plate was sawed from a diamond grown in the high-pressure-high-temperature (HPHT) process. Maps for broadening relative to a reference point on the diamond for the (2 2 4) reflection at 12 keV are reported before and after chemical etching. Significant rocking curve narrowing over most of the diamond was found, and we conclude that the diffraction performance of (0 0 1) oriented type Ib diamonds can be significantly improved over a large area by chemical etching. Stripes in the map before etching corresponded to grooves formed in the process of sawing the plate out of the as-grown stone. The FWHM map did not correlate with the surface height profile measured after {approx}10 {mu}m were removed from the surface by etching.

  6. A survey on the reactive ion etching of silicon in microtechnology

    NARCIS (Netherlands)

    Jansen, Henricus V.; Gardeniers, Johannes G.E.; de Boer, Meint J.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system

  7. Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon

    Science.gov (United States)

    Kong, Lingyu; Dasgupta, Binayak; Ren, Yi; Mohseni, Parsian K.; Hong, Minghui; Li, Xiuling; Chim, Wai Kin; Chiam, Sing Yang

    2016-11-01

    In this work, we investigate the transport processes governing the metal-assisted chemical etching (MacEtch) of silicon (Si). We show that in the oxidation of Si during the MacEtch process, the transport of the hole charges can be accomplished by the diffusion of metal ions. The oxidation of Si is subsequently governed by a redox reaction between the ions and Si. This represents a fundamentally different proposition in MacEtch whereby such transport is understood to occur through hole carrier conduction followed by hole injection into (or electron extraction from) Si. Consistent with the ion transport model introduced, we showed the possibility in the dynamic redistribution of the metal atoms that resulted in the formation of pores/cracks for catalyst thin films that are ≲30 nm thick. As such, the transport of the reagents and by-products are accomplished via these pores/cracks for the thin catalyst films. For thicker films, we show a saturation in the etch rate demonstrating a transport process that is dominated by diffusion via metal/Si boundaries. The new understanding in transport processes described in this work reconcile competing models in reagents/by-products transport, and also solution ions and thin film etching, which can form the foundation of future studies in the MacEtch process.

  8. Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma.

    Science.gov (United States)

    Ito, Hiroshi; Kuwahara, Takuya; Kawaguchi, Kentaro; Higuchi, Yuji; Ozawa, Nobuki; Kubo, Momoji

    2016-03-21

    We used our etching simulator [H. Ito et al., J. Phys. Chem. C, 2014, 118, 21580-21588] based on tight-binding quantum chemical molecular dynamics (TB-QCMD) to elucidate SiC etching mechanisms. First, the SiC surface is irradiated with SF5 radicals, which are the dominant etchant species in experiments, with the irradiation energy of 300 eV. After SF5 radicals bombard the SiC surface, Si-C bonds dissociate, generating Si-F, C-F, Si-S, and C-S bonds. Then, etching products, such as SiS, CS, SiFx, and CFx (x = 1-4) molecules, are generated and evaporated. In particular, SiFx is the main generated species, and Si atoms are more likely to vaporize than C atoms. The remaining C atoms on SiC generate C-C bonds that may decrease the etching rate. Interestingly, far fewer Si-Si bonds than C-C bonds are generated. We also simulated SiC etching with SF3 radicals. Although the chemical reaction dynamics are similar to etching with SF5 radicals, the etching rate is lower. Next, to clarify the effect of O atom addition on the etching mechanism, we also simulated SiC etching with SF5 and O radicals/atoms. After bombardment with SF5 radicals, Si-C bonds dissociate in a similar way to the etching without O atoms. In addition, O atoms generate many C-O bonds and COy (y = 1-2) molecules, inhibiting the generation of C-C bonds. This indicates that O atom addition improves the removal of C atoms from SiC. However, for a high O concentration, many C-C and Si-Si bonds are generated. When the O atoms dissociate the Si-C bonds and generate dangling bonds, the O atoms terminate only one or two dangling bonds. Moreover, at high O concentrations there are fewer S and F atoms to terminate the dangling bonds than at low O concentration. Therefore, few dangling bonds of dissociated Si and C atoms are terminated, and they form many Si-Si and C-C bonds. Furthermore, we propose that the optimal O concentration is 50-60% because both Si and C atoms generate many etching products producing fewer C

  9. Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation

    Science.gov (United States)

    Liu, Zecheng; Imamura, Masato; Asano, Atsuki; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

    2017-08-01

    Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl2 plasma emissions with wavelengths of 258 and 306 nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors.

  10. Constructing submicron textures on mc-Si solar cells via copper-catalyzed chemical etching

    Science.gov (United States)

    Zha, Jiawei; Wang, Ting; Pan, Chengfeng; Chen, Kexun; Hu, Fenqin; Pi, Xiaodong; Su, Xiaodong

    2017-02-01

    Mass production of diamond-wire-sawn (DWS) multicrystalline silicon (mc-Si) solar cells reached a significant point of maturity through utilization of metal-catalyzed chemical etching (MCCE). However, nanotextured DWS mc-Si solar cells usually produced with Ag-MCCE still suffer from certain drawbacks, such as remaining saw marks, color differences among grains, and slight decreases in the open-circuit voltage (Voc). In this work, we show that unoriented Cu-based MCCE (Cu-MCCE) not only depresses the saw marks and color differences but also introduces random shallow pits, which act as artificial defects that can be easily converted into a submicron texture using conventional HNO3/HF etching. Moreover, we demonstrate that the efficiency of DWS mc-Si solar cells produced with the Cu-MCCE process is greater than 19%, with improved Voc resulting from better surface passivation. This cost-effective Cu-MCCE method is, therefore, of significant potential for the photovoltaic industry.

  11. Micro-collimators fabricated by chemical etching of thin polyallyldiglycol carbonate polymer films exposed to oxygen ions

    Energy Technology Data Exchange (ETDEWEB)

    Choi, V.W.Y.; Ng, C.K.M.; Nikezic, D. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Konishi, T. [National Institute of Radiological Sciences, Department of Technical Support and Development, Chiba 263-8555 (Japan); Yu, K.N., E-mail: peter.yu@cityu.edu.h [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2011-03-01

    One approach for {alpha} particle radiobiological experiments is to use solid-state nuclear track detectors (SSNTDs) as support substrates to record the {alpha} particle hit positions on the targets. To facilitate accurate characterization of the hit positions as well as the incident {alpha} particle energies, micro-collimators are required in these experiments to restrict the incident {alpha} particles to those with small deviations from normal incidence with respect to the collimator. In the present paper, we fabricated micro-collimators, which restricted {alpha} particles to those with deviations as low as 12{sup o}. Specially etched polyallyldiglycol carbonate (PADC) films, which are a kind of SSNTD, with a thickness 70 {mu}m were prepared from commercially available PADC films. These were then irradiated by 4.83 MeV/n oxygen ions generated from the heavy-ion medical accelerator in Chiba (HIMAC), Japan. The irradiated films were chemically etched for at least 2.7 h to achieve etched-through air channels to form the micro-collimators. The micro-collimators formed by etching the irradiated films for 2.7, 3.0 and 4.0 h were experimentally shown to be able to restrict {alpha} particles to those very close to normal incidence. In contrast, the micro-collimator formed by etching the irradiated film for 4.5 h started to allow {alpha} particles with larger deviations from normal incidence to pass through, which is likely due to overlapping of air channels from excessive etching.

  12. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    Science.gov (United States)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  13. Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

    Institute of Scientific and Technical Information of China (English)

    ZHONG Min; SONG Zhi-Tang; LIU Bo; FENG Song-Lin; CHEN Bomy

    2008-01-01

    In order to improve nano-scale phase change memory performance,a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge2Sb2Te5 phase change films.We use reactive ion etching (RIE) as the cleaning method.The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer.The results show that particle residue on the surface has been removed.Meanwhile,Ge2 Sb2 Te5 material stoichiometric content ratios are unchanged.After the top electrode is deposited,currentvoltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1 mA to 0.025 mA.Furthermore,we analyse the RIE cleaning principle and compare it with the ultrasonic method.

  14. A novel colloid probe preparation method based on chemical etching technique

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Several fundamental problems in hydrophobic force measurements using atomic force microscope (AFM) are discussed in this paper. A novel method for colloid probe preparation based on chemical etching technology is proposed, which is specially fit for the unique demands of hydrophobic force measurements by AFM. The features of three different approaches for determining spring constants of rectangular cantilevers, including geometric dimension, Cleveland and Sader methods are compared. The influences of the sizes of the colloids on the measurements of the hydrophobic force curves are investigated. Our experimental results showed that by selecting colloid probe with proper spring constant and tip size, the hydrophobic force and the complete hydrophobic interaction force curve can be measured by using AFM.

  15. An automated neutron dosimetry system based on the chemical etch of CR-39

    Energy Technology Data Exchange (ETDEWEB)

    Harvey, J.R.; French, A.P.; Jackson, M. [Ministry of Defence, Gosport (United Kingdom). Defence Radiological Protection Service; Renouf, M.C. [BICRON NE, Reading (United Kingdom); Weeks, A.R. [Magnox Electric plca, Berkeley (United Kingdom)

    1997-09-01

    The dosimetric characteristics of two types of personal neutron dosemeter have recently been extensively assessed. The effects of exposure to various extreme environments have also been studied. Both types of dosemeter utilise chemically etched elements which are read in an automated reader, the Autoscan 60, which uses an edge illumination system to increase the pit image size. One type of dosemeter contains three elements in a pyramid structure. The other uses one or two elements in a planar structure. The results indicate that both types of dosemeter can be used to assess accurately the personal dose from neutrons in a range of harsh environments. Formal approval for the operational use of the system has been received. (author).

  16. Dynamics of wicking in silicon nanopillars fabricated with interference lithography and metal-assisted chemical etching.

    Science.gov (United States)

    Mai, Trong Thi; Lai, Chang Quan; Zheng, H; Balasubramanian, Karthik; Leong, K C; Lee, P S; Lee, Chengkuo; Choi, W K

    2012-08-07

    The capillary rise of liquid on a surface, or "wicking", has potential applications in biological and industrial processes such as drug delivery, oil recovery, and integrated circuit chip cooling. This paper presents a theoretical study on the dynamics of wicking on silicon nanopillars based on a balance between the driving capillary forces and viscous dissipation forces. Our model predicts that the invasion of the liquid front follows a diffusion process and strongly depends on the structural geometry. The model is validated against experimental observations of wicking in silicon nanopillars with different heights synthesized by interference lithography and metal-assisted chemical etching techniques. Excellent agreement between theoretical and experimental results, from both our samples and data published in the literature, was achieved.

  17. Mathematical modeling of chemical composition modification and etching of polymers under the atomic oxygen influence

    Science.gov (United States)

    Chirskaia, Natalia; Novikov, Lev; Voronina, Ekaterina

    2016-07-01

    Atomic oxygen (AO) of the upper atmosphere is one of the most important space factors that can cause degradation of spacecraft surface. In our previous mathematical model the Monte Carlo method and the "large particles" approximation were used for simulating processes of polymer etching under the influence of AO [1]. The interaction of enlarged AO particles with the polymer was described in terms of probabilities of reactions such as etching of polymer and specular and diffuse scattering of the AO particles on polymer. The effects of atomic oxygen on protected polymers and microfiller containing composites were simulated. The simulation results were in quite good agreement with the results of laboratory experiments on magnetoplasmadynamic accelerator of the oxygen plasma of SINP MSU [2]. In this paper we present a new model that describes the reactions of AO interactions with polymeric materials in more detail. Reactions of formation and further emission of chemical compounds such as CO, CO _{2}, H _{2}O, etc. cause the modification of the chemical composition of the polymer and change the probabilities of its consequent interaction with the AO. The simulation results are compared with the results of previous simulation and with the results of laboratory experiments. The reasons for the differences between the results of natural experiments on spacecraft, laboratory experiments and simulations are discussed. N. Chirskaya, M. Samokhina, Computer modeling of polymer structures degradation under the atomic oxygen exposure, WDS'12 Proceedings of Contributed Papers: Part III - Physics, Matfyzpress Prague, 2012, pp. 30-35. E. Voronina, L. Novikov, V. Chernik, N. Chirskaya, K. Vernigorov, G. Bondarenko, and A. Gaidar, Mathematical and experimental simulation of impact of atomic oxygen of the earth's upper atmosphere on nanostructures and polymer composites, Inorganic Materials: Applied Research, 2012, vol. 3, no. 2, pp. 95-101.

  18. In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.

    Science.gov (United States)

    Wilkins, Stewart J; Greenough, Michelle; Arellano, Consuelo; Paskova, Tania; Ivanisevic, Albena

    2014-03-04

    In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored through surface characterization with atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL), inductively coupled plasma-mass spectrometry, and water contact angle. The use of (3-bromopropyl) phosphonic acid and propyl phosphonic acid in phosphoric acid demonstrated lower amounts of gallium oxide formation and greater hydrophobicity for both sample sets, while also improving PL emission of polar GaN samples. In addition to crystal orientation, growth-related factors such as defect density in bulk GaN versus thin GaN films residing on sapphire substrates were investigated as well as their responses to in situ functionalization. Thin nonpolar GaN layers were the most sensitive to etching treatments due in part to higher defect densities (stacking faults and threading dislocations), which accounts for large surface depressions. High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation. Room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. The chemical methods applied to tune optical and physical properties of GaN provide a quantitative framework for future novel chemical and biochemical sensor development.

  19. Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

    Science.gov (United States)

    Sun, Jingchang; Zhao, Ting; Ma, Zhangwei; Li, Ming; Chang, Cheng; Liang, Hongwei; Bian, Jiming; Li, Chengren

    2015-09-01

    The well-aligned ZnO nano-arrays/rods synthesized by a chemical bath deposition method on a highly conductive Si substrate were chemically etched in an ammonia chloride aqueous solution. An obvious end shape modification of ZnO nano-arrays/rods was realized in this report. The hexagonal frustum end of ZnO nano-arrays/rods changed into a pyramid and the diameter of ZnO nano-arrays/rods decreased gradually with the increasing etching time. The evolution mechanism of the wet etching process was discussed based on a proposed evolution model. Photoluminescence measurements indicated that the near band edge emissions of ZnO nano-arrays/rods increased greatly after wet etching. The controllable end shape modification of ZnO nano-arrays/rods on a highly conductive Si substrate by this simple wet etching technique will further explore the application of ZnO in field emission devices and 1D based nano-devices with various end shapes.

  20. Light-emitting silicon nanowires obtained by metal-assisted chemical etching

    Science.gov (United States)

    Irrera, Alessia; Josè Lo Faro, Maria; D’Andrea, Cristiano; Alessio Leonardi, Antonio; Artoni, Pietro; Fazio, Barbara; Picca, Rosaria Anna; Cioffi, Nicola; Trusso, Sebastiano; Franzò, Giorgia; Musumeci, Paolo; Priolo, Francesco; Iacona, Fabio

    2017-04-01

    This review reports on a new process for the synthesis of Si nanowires (NWs), based on the wet etching of Si substrates assisted by a thin metal film. The approach exploits the thickness-dependent morphology of the metal layers to define uncovered nanometric Si regions, which behave as precursor sites for the formation of very dense (up to 1 × 1012 NW cm‑2) arrays of long (up to several μm) and ultrathin (diameter of 5–9 nm) NWs. Intense photoluminescence (PL) peaks, characterized by maxima in the 640–750 nm range and by an external quantum efficiency of 0.5%, are observed when the Si NWs are excited at room temperature. The spectra show a blueshift if the size of the NW is decreased, in agreement with the occurrence of quantum confinement effects. The same etching process can be used to obtain ultrathin Si/Ge NWs from a Si/Ge multi-quantum well. The Si/Ge NWs exhibit—in addition to the Si-related PL peak—a signal at about 1240 nm due to Ge nanostructures. The huge surface area of the Si NW arrays can be exploited for sensing and analytical applications. The dependence of the PL intensity on the chemical composition of the surface indeed suggests interesting perspectives for the detection of gaseous molecules. Moreover, Si NWs decorated with Ag nanoparticles can be effectively employed in the interference-free laser desorption-ionization mass spectrometry of low-molecular-weight analytes. A device based on conductive Si NWs, showing intense and stable electroluminescence at an excitation voltage as low as 2 V, is also presented. The unique features of the proposed synthesis (the process is cheap, fast, maskless and compatible with Si technology) and the unusual optical properties of the material open the route towards new and unexpected perspectives for semiconductor NWs in photonics.

  1. Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer

    Science.gov (United States)

    Kicin, S.; Cambel, V.; Kuliffayová, M.; Gregušová, D.; Kováčová, E.; Novák, J.; Kostič, I.; Förster, A.

    2002-01-01

    We present a wet-chemical-etching method developed for the preparation of GaAs four-sided pyramid-shaped mesas. The method uses a fast lateral etching of AlAs interlayer that influences the cross-sectional profiles of etched structures. We have tested the method using H3PO4:H2O2:H2O etchant for the (100) GaAs patterning. The sidewalls of the prepared pyramidal structures together with the (100) bottom facet formed the cross-sectional angles 25° and 42° for mask edges parallel, resp. perpendicular to {011} cleavage planes. For mask edges turned in 45° according to the cleavage planes, 42° cross-sectional angles were obtained. Using the method, symmetric and more than 10-μm-high GaAs "Egyptian" pyramids with smooth tilted facets were prepared.

  2. Optical Characterization of Chemically Etched Nanoporous Silicon Embedded in Sol-Gel Matrix

    Directory of Open Access Journals (Sweden)

    A. S. Al Dwayyan

    2012-01-01

    Full Text Available Nanoporous (NPs silicon fabricated by chemical etching process in HF acid was first separated in tetrahydrofuran (THF solvent and then incorporated into SiO2 matrix. The matrix was prepared by sol gel process in which dimethylformamide (DMF was used as drying chemical control additive (DCCA to form crack-free dried sample. We examined the optical properties of NPs in three medium which are solvent, sol, and dried sol gel. Our observations reveal that absorption spectra of NPs silicon in THF are modified with respect to the spectra in sol gel. Significant stability in PL of NPs silicon in the sol gel is observed. Influence of matrix environment on peaks of NPs is also discussed. Surface morphology is characterized by field emission scanning electron microscopy (FESEM which shows that the NPs silicon in THF is similar to the sol gel but becomes aggregation particle to particle. Presence of Si nanoparticles in THF and sol is confirmed by Transmission electron microscopy (TEM. The NPs silicons have mono dispersive and high crystalline nature with spherical shape of around 5 nm in sizes.

  3. Patterned Au/poly(dimethylsiloxane) substrate fabricated by chemical plating coupled with electrochemical etching for cell patterning.

    Science.gov (United States)

    Bai, Hai-Jing; Shao, Min-Ling; Gou, Hong-Lei; Xu, Jing-Juan; Chen, Hong-Yuan

    2009-09-01

    In this paper, we present a novel approach for preparing patterned Au/poly(dimethylsiloxane) (PDMS) substrate. Chemical gold plating instead of conventional metal evaporation or sputtering was introduced to achieve a homogeneous gold layer on native PDMS for the first time, which possesses low-cost and simple operation. An electrochemical oxidation reaction accompanied by the coordination of gold and chloride anion was then exploited to etch gold across the region covered by electrolyte. On the basis of such an electrochemical etching, heterogeneous Au/PDMS substrate which has a gold "island" pattern or PDMS dots pattern was fabricated. Hydrogen bubbles which were generated in the etching process due to water electrolysis were used to produce a safe region under the Pt auxiliary electrode. The safe region would protect gold film from etching and lead to the formation of the gold "island" pattern. In virtue of a PDMS stencil with holes array, gold could be etched from the exposed region and take on the PDMS dots pattern which was selected to for protein and cell patterning. This patterned Au/PDMS substrate is very convenient to construct cytophobic and cytophilic regions. Self-assembled surface modification of (1-mercaptoundec-11-yl)hexa(ethylene glycol) on gold and adsorption of fibronectin on PDMS are suitable for effective protein and cell patterning. This patterned Au/PDMS substrate would be a potentially versatile platform for fabricating biosensing arrays.

  4. Preparation of Chemically Etched Tips for Ambient Instructional Scanning Tunneling Microscopy

    Science.gov (United States)

    Zaccardi, Margot J.; Winkelmann, Kurt; Olson, Joel A.

    2010-01-01

    A first-year laboratory experiment that utilizes concepts of electrochemical tip etching for scanning tunneling microscopy (STM) is described. This experiment can be used in conjunction with any STM experiment. Students electrochemically etch gold STM tips using a time-efficient method, which can then be used in an instructional grade STM that…

  5. Biomimetic hydrophobic surface fabricated by chemical etching method from hierarchically structured magnesium alloy substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yan; Yin, Xiaoming; Zhang, Jijia [Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun 130022 (China); Wang, Yaming [Institute for Advanced Ceramics, Harbin Institute of Technology, Harbin 150001 (China); Han, Zhiwu, E-mail: zwhan@jlu.edu.cn [Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun 130022 (China); Ren, Luquan [Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun 130022 (China)

    2013-09-01

    As one of the lightest metal materials, magnesium alloy plays an important role in industry such as automobile, airplane and electronic product. However, magnesium alloy is hindered due to its high chemical activity and easily corroded. Here, inspired by typical plant surfaces such as lotus leaves and petals of red rose with super-hydrophobic character, the new hydrophobic surface is fabricated on magnesium alloy to improve anti-corrosion by two-step methodology. The procedure is that the samples are processed by laser first and then immersed and etched in the aqueous AgNO{sub 3} solution concentrations of 0.1 mol/L, 0.3 mol/L and 0.5 mol/L for different times of 15 s, 40 s and 60 s, respectively, finally modified by DTS (CH{sub 3}(CH{sub 2}){sub 11}Si(OCH{sub 3}){sub 3}). The microstructure, chemical composition, wettability and anti-corrosion are characterized by means of SEM, XPS, water contact angle measurement and electrochemical method. The hydrophobic surfaces with microscale crater-like and nanoscale flower-like binary structure are obtained. The low-energy material is contained in surface after DTS treatment. The contact angles could reach up to 138.4 ± 2°, which hydrophobic property is both related to the micro–nano binary structure and chemical composition. The results of electrochemical measurements show that anti-corrosion property of magnesium alloy is improved. Furthermore, our research is expected to create some ideas from natural enlightenment to improve anti-corrosion property of magnesium alloy while this method can be easily extended to other metal materials.

  6. Post-synthetic Anisotropic Wet-Chemical Etching of Colloidal Sodalite ZIF Crystals

    Science.gov (United States)

    Avci, Civan; Ariñez-Soriano, Javier; Carné-Sánchez, Arnau; Guillerm, Vincent; Carbonell, Carlos; Imaz, Inhar; Maspoch, Daniel

    2016-01-01

    Controlling the shape of metal-organic framework (MOF) crystals is important for understanding their crystallization and useful for myriad applications. However, despite the many advances in shaping of inorganic nanoparticles, post-synthetic shape control of MOFs and, in general, molecular crystals remains embryonic. Herein we report using a simple wet-chemistry process at room temperature to control the anisotropic etching of colloidal ZIF-8 and ZIF-67 crystals. Our work enables uniform reshaping of these porous materials into unprecedented morphologies, including cubic and tetrahedral crystals, and even hollow boxes, via acid-base reaction and subsequent sequestration of leached metal ions. Etching tests on these ZIFs reveal that etching occurs preferentially in the crystallographic directions richer in metal-ligand bonds; that, among these directions, the etching rate tends to be faster on the crystal surfaces of higher dimensionality; and that the etching can be modulated by adjusting the pH of the etchant solution. PMID:26458081

  7. Investigation of textured Al-doped ZnO thin films using chemical wet-etching methods

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Wei-Lun; Huang, Kuo-Chan [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Yeh, Chih-Hung [R and D Center, NexPower Technology Corporation, Taichung 421, Taiwan (China); Hung, Chen-I [Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2011-05-16

    Research highlights: {yields} The effects of deposition temperature on the electrical properties of ZnO:Al film is revealed in this study. {yields} The optical properties of textured ZnO:Al films etched in diluted HCl, H{sub 3}PO{sub 4} and HNO{sub 3} were studied. {yields} The effects of etching parameters on the optical and electrical properties of ZnO:Al film are investigated in this study. {yields} The diluted HNO{sub 3} is the best candidate to fabricate excellent textured surface with the highest haze ratio in this study. - Abstract: In this study, the optical properties and morphologies of Al-doped ZnO (AZO) films textured by the chemical wet-etching method with three different acid species are investigated. An initial AZO film is sputtered on a glass substrate by rf magnetron sputtering. The film surface was then textured by wet-etching using diluted HCl, HNO{sub 3} or H{sub 3}PO{sub 4}. The average transmittance of all the post-treated ZnO:Al films remains around 75-80% as measured by a UV-vis analyzer. A haze ratio calculation shows that the light scattering properties can be significantly controlled by varying the etchant species, acid concentration, and etching time. Atomic force microscopy (AFM) was used to find the average roughness of the textured AZO films. In this study, the HNO{sub 3} etchant gives the highest haze ratio of 49.2% at a wavelength of 550 nm. The textured ZnO:Al films with an electrical resistivity of 5.47 x 10{sup -4} {Omega}-cm, carrier concentrations of 3.98 x 10{sup 20} cm{sup -3} and mobility of 28.7 cm{sup 2} V{sup -1} s{sup -1}, can be obtained when etched in diluted HNO{sub 3} for 60 s. It is found that the chemical wet-etched AZO glass substrate appears to be helpful in enhancing the short circuit current (J{sub sc}) when applied on silicon thin film solar cells.

  8. Dislocation substructure of mantle-derived olivine as revealed by selective chemical etching and transmission electron microscopy

    Science.gov (United States)

    Kirby, S.H.; Wegner, M.W.

    1978-01-01

    Cleaved and mechanically polished surfaces of olivine from peridotite xenoliths from San Carlos, Arizona, were chemically etched using the techniques of Wegner and Christie (1974). Dislocation etch pits are produced on all surface orientations and they tend to be preferentially aligned along the traces of subgrain boundaries, which are approximately parallel to (100), (010), and (001). Shallow channels were also produced on (010) surfaces and represent dislocations near the surface that are etched out along their lengths. The dislocation etch channel loops are often concentric, and emanate from (100) subgrain boundaries, which suggests that dislocation sources are in the boundaries. Data on subgrain misorientation and dislocation line orientation and arguments based on subgrain boundary energy minimization are used to characterize the dislocation structures of the subgrain boundaries. (010) subgrain boundaries are of the twist type, composed of networks of [100] and [001] screw dislocations. Both (100) and (001) subgrain boundaries are tilt walls composed of arrays of edge dislocation with Burgers vectors b=[100] and [001], respectively. The inferred slip systems are {001} ???100???, {100} ???001???, and {010} ???100??? in order of diminishing importance. Exploratory transmission electron microscopy is in accord with these identifications. The flow stresses associated with the development of the subgrain structure are estimated from the densities of free dislocations and from the subgrain dimensions. Inferred stresses range from 35 to 75 bars using the free dislocation densities and 20 to 100 bars using the subgrain sizes. ?? 1978 Springer-Verlag.

  9. Three-dimensional structuring of sapphire by sequential He sup + ion-beam implantation and wet chemical etching

    CERN Document Server

    Crunteanu, A; Hoffmann, P; Pollnau, M; Buchal, C; Petraru, A; Eason, R W; Shepherd, D P

    2003-01-01

    We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 mu m and subsequent selective wet chemical etching of the damaged regions by hot H sub 3 PO sub 4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1 x 10 sup 1 sup 6 to 5 x 10 sup 1 sup 7 He sup + /cm sup 2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. (orig.)

  10. Chemical etching investigation of polycrystalline p-type 6H-SiC in HF/Na{sub 2}O{sub 2} solutions

    Energy Technology Data Exchange (ETDEWEB)

    Gabouze, Noureddine [Silicon Technology Development Unit (UDTS), 2 Bd Frantz Fanon, B.P. 140, Algiers (Algeria); Keffous, Aissa, E-mail: ngabouze@yahoo.fr [Silicon Technology Development Unit (UDTS), 2 Bd Frantz Fanon, B.P. 140, Algiers (Algeria); Kerdja, Tahar; Belaroussi, Yasmine [Advanced Techniques Development Center (CDTA), Haouch Loukil, Baba Hassen, Algiers (Algeria)

    2009-05-15

    In this work, an experimental study on the chemical etching reaction of polycrystalline p-type 6H-SiC was carried out in HF/Na{sub 2}O{sub 2} solutions. The morphology of the etched surface was examined with varying Na{sub 2}O{sub 2} concentration, etching time, agitation speed and temperature. The surfaces of the etched samples were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) Fourier transform infrared spectroscopy (FT-IR) and photoluminescence. The surface morphology of samples etched in HF/Na{sub 2}O{sub 2} is shown to depend on the solution composition and bath temperature. The investigation of the HF/Na{sub 2}O{sub 2} solutions on 6H-SiC surface shows that as Na{sub 2}O{sub 2} concentration increases, the etch rate increases to reach a maximum value at about 0.5 M and then decreases. A similar behaviour has been observed when temperature of the solution is increased. The maximum etch rate is found for 80 deg. C. In addition, a new polishing etching solution of 6H-SiC has been developed. This result is very interesting since to date no chemical polishing solution has been developed on the material.

  11. On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium

    CERN Document Server

    Kartopu, G; Karavanskij, V A; Curry, R J; Turan, R; Sapelkin, A V

    2003-01-01

    The photoluminescence (PL) at approx 2.2-2.3 eV from Ge-based nanocrystalline materials is described in the literature as nanocrystal size-independent. We have observed visible luminescence from two different types of stain-etched Ge samples, one prepared after Sendova-Vassileva et al. (Thin Solid Films 255 (1995) 282) in a solution of H sub 2 O sub 2 :HF at 50:1 volume ratio, and the other in a solution of HF:H sub 3 PO sub 4 :H sub 2 O sub 2 at 34:17:1 volume ratio. Energy dispersive X-ray analysis (EDX), Raman and FTIR spectroscopy, and the near edge X-ray absorption structure (XANES), indicate that the chemically etched Ge layers of the former type of samples are composed of non-stoichometric Ge oxides, i.e. GeO sub x (0chemically etched Ge samples comprise 8-9 nm nanocrystals of Ge, surface-covered with mainly oxygen. Photoluminescence occurred at approx 2.3 eV for all samples. The PL behavior of ...

  12. The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching

    Science.gov (United States)

    Zhong, Hao; Guo, Anran; Guo, Guohui; Li, Wei; Jiang, Yadong

    2016-07-01

    We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

  13. Fabrication of nano-gap electrode arrays by the construction and selective chemical etching of nano-crosswire stacks

    Science.gov (United States)

    Son, Kyung-Ah (Inventor); Prokopuk, Nicholas (Inventor)

    2008-01-01

    Methods of fabricating nano-gap electrode structures in array configurations, and the structures so produced. The fabrication method involves depositing first and second pluralities of electrodes comprising nanowires using processes such as lithography, deposition of metals, lift-off processes, and chemical etching that can be performed using conventional processing tools applicable to electronic materials processing. The gap spacing in the nano-gap electrode array is defined by the thickness of a sacrificial spacer layer that is deposited between the first and second pluralities of electrodes. The sacrificial spacer layer is removed by etching, thereby leaving a structure in which the distance between pairs of electrodes is substantially equal to the thickness of the sacrificial spacer layer. Electrode arrays with gaps measured in units of nanometers are produced. In one embodiment, the first and second pluralities of electrodes are aligned in mutually orthogonal orientations.

  14. A DLVO model for catalyst motion in metal-assisted chemical etching based upon controlled out-of-plane rotational etching and force-displacement measurements.

    Science.gov (United States)

    Hildreth, Owen J; Rykaczewski, Konrad; Fedorov, Andrei G; Wong, Ching P

    2013-02-07

    Metal-assisted Chemical Etching of silicon has recently emerged as a powerful technique to fabricate 1D, 2D, and 3D nanostructures in silicon with high feature fidelity. This work demonstrates that out-of-plane rotational catalysts utilizing polymer pinning structures can be designed with excellent control over rotation angle. A plastic deformation model was developed establishing that the catalyst is driven into the silicon substrate with a minimum pressure differential across the catalyst thickness of 0.4-0.6 MPa. Force-displacement curves were gathered between an Au tip and Si or SiO(2) substrates under acidic conditions to show that Derjaguin and Landau, Verwey and Overbeek (DLVO) based forces are capable of providing restorative forces on the order of 0.2-0.3 nN with a calculated 11-18 MPa pressure differential across the catalyst. This work illustrates that out-of-plane rotational structures can be designed with controllable rotation and also suggests a new model for the driving force for catalyst motion based on DLVO theory. This process enables the facile fabrication of vertically aligned thin-film metallic structures and scalloped nanostructures in silicon for applications in 3D micro/nano-electromechanical systems, photonic devices, nanofluidics, etc.

  15. Method for protecting chip corners in wet chemical etching of wafers

    Science.gov (United States)

    Hui, Wing C.

    1994-01-01

    The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible.

  16. Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

    Energy Technology Data Exchange (ETDEWEB)

    Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

    2016-08-01

    Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

  17. Single-Crystalline Silicon Solar Cell with Selective Emitter Formed by Screen Printing and Chemical Etching Method: A Feasibility Study

    Directory of Open Access Journals (Sweden)

    Yen-Po Chen

    2013-01-01

    Full Text Available A new method for fabricating crystalline silicon solar cells with selective emitters is presented. In this method, shallow trenches corresponding to metal contact area are first formed by screen printing and chemical etching, followed by heavy doping over the whole front surface of the silicon wafer. After a polymer mask is pasted by aligned screen-printing to cover the shallow trenches, the silicon wafer is etched such that the heavy doping remains at the shallow trench area, while other areas become lightly doped. With the presented method, two screening printing steps are required for obtaining a selective emitter structure on a solar wafer. Compared with existing etch-back methods, the presented one is believed to be able to easily conform with present industrial process. Experimental results show that optical responses at the short and long wavelengths were both improved by applying the proposed selective emitter technique to fabricate solar cells with an a-Si:H film deposited on the back surface. The selective emitter cell with a-Si:H back surface deposition had improvements of 1.66 mA/cm2 and 1.23% absolute in Jsc and conversion efficiency, respectively, compared to the reference cell that had a homogeneous emitter and no a-Si:H on the back surface.

  18. Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

    Science.gov (United States)

    Dawood, M. K.; Tripathy, S.; Dolmanan, S. B.; Ng, T. H.; Tan, H.; Lam, J.

    2012-10-01

    We report on the structural and vibrational characterization of silicon (Si) nanowire arrays synthesized by metal-assisted chemical etching (MACE) of Si deposited with metal nanoparticles. Gold (Au) and silver (Ag) metal nanoparticles were synthesized by glancing angle deposition, and MACE was performed in a mixture of H2O2 and HF solution. We studied the structural differences between Au and Ag-etched Si nanowires. The morphology of the synthesized nanowires was characterized by scanning electron microscopy and transmission electron microscopy. The optical and vibrational properties of the Si nanostructures were studied by photoluminescence and Raman spectroscopy using three different excitation sources (UV, visible, and near-infrared) and are correlated to their microstructures. The structural differences between Au-etched and Ag-etched nanowires are due to the higher degree of hole injection by the Au nanoparticle and diffusion into the Si nanowires, causing enhanced Si etching by HF on the nanowire surface. Au-etched nanowires were observed to be mesoporous throughout the nanowire while Ag-etched nanowires consisted of a thin porous layer around the crystalline core. In addition, the surface-enhanced resonant Raman scattering observed is attributed to the presence of the sunken metal nanoparticles. Such Si nanostructures may be useful for a wide range of applications such as photovoltaic and biological and chemical sensing.

  19. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    Science.gov (United States)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  20. Fabrication of honeycomb texture on poly-Si by laser interference and chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bogeum; Lee, Myeongkyu, E-mail: myeong@yonsei.ac.kr

    2013-11-01

    In this paper, we present a laser-interference method to fabricate honeycomb textures on poly-Si wafer for reflection reduction. When exposed to three interfering pulsed laser beams at 532 nm, the Si surface was periodically melted in accordance with the interference pattern. As a result, concave holes were generated on the surface because the melted material overflowed and condensed at the periphery. Subsequent acid etching revealed uniform and clean honeycomb textures. The texture depth could be controlled by varying the irradiation condition and a minimum reflectance of 10% was obtained. Transmission electron microscopy analysis showed that no irradiation-induced damage remained after etching. This approach can be a cost-effective alternative to lithographic processes for fabricating high-efficiency poly-Si solar cells.

  1. Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching

    Science.gov (United States)

    Wei, Zhengfei; Newman, Michael J.; Tsoi, Wing C.; Watson, Trystan M.

    2016-09-01

    Raman spectroscopy has been widely used as a non-destructive surface characterization method for the Cu2ZnSnS4 (CZTS) thin films. Secondary phases, which often co-exist with CZTS, are detrimental to the device performance. In this work, removal of the secondary phases using sodium sulfide (Na2S) aqueous solution etching in various time durations was investigated. Raman scattering mapping provides a direct visualization of phase distribution in CZTS-based materials on a relatively large scale (1 mm × 10 mm). Both as-grown and etched CZTS absorber layers were examined by Raman spectroscopy with a 532 nm excitation laser light in the range of 50-500 cm-1. A clear reduction of the secondary phases (mainly SnS) at the surface after etching was confirmed by Raman spectroscopy and scanning electron microscopy. Room temperature photoluminescence (PL) reveals a pronounced correlation between the amount of secondary phases and photoluminescence peak position. The PL spectra of the regions with more Sn-rich secondary phases show clearly a shift to high wavelength of the peak position, in comparison with regions with less Sn-rich secondary phases. These observed PL changes could be due to Sn-rich defects which may cause recombination processes.

  2. ECE laboratory in the Vinča institute: Its basic characteristics and fundamentals of electrochemic etching on polycarbonate

    Directory of Open Access Journals (Sweden)

    Žunić Zora S.

    2003-01-01

    Full Text Available This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINČA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up^ i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings.

  3. High-Performance Black Multicrystalline Silicon Solar Cells by a Highly Simplified Metal-Catalyzed Chemical Etching Method

    KAUST Repository

    Ying, Zhiqin

    2016-05-20

    A wet-chemical surface texturing technique, including a two-step metal-catalyzed chemical etching (MCCE) and an extra alkaline treatment, has been proven as an efficient way to fabricate high-efficiency black multicrystalline (mc) silicon solar cells, whereas it is limited by the production capacity and the cost cutting due to the complicated process. Here, we demonstrated that with careful control of the composition in etching solution, low-aspect-ratio bowl-like nanostructures with atomically smooth surfaces could be directly achieved by improved one-step MCCE and with no posttreatment, like alkali solution. The doublet surface texture of implementing this nanobowl structure upon the industrialized acidic-textured surface showed concurrent improvement in optical and electrical properties for realizing 18.23% efficiency mc-Si solar cells (156 mm × 156 mm), which is sufficiently higher than 17.7% of the solely acidic-textured cells in the same batch. The one-step MCCE method demonstrated in this study may provide a cost-effective way to manufacture high-performance mc-Si solar cells for the present photovoltaic industry. © 2016 IEEE.

  4. A model of chemical etching of olivine in the vicinity of the trajectory of a swift heavy ion

    Energy Technology Data Exchange (ETDEWEB)

    Gorbunov, S.A., E-mail: s.a.gorbunov@mail.ru [Lebedev Physical Institute of the Russian Academy of Sciences, Leninskij pr. 53, 119991 Moscow (Russian Federation); Rymzhanov, R.A. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); Starkov, N.I. [Lebedev Physical Institute of the Russian Academy of Sciences, Leninskij pr. 53, 119991 Moscow (Russian Federation); Volkov, A.E. [Lebedev Physical Institute of the Russian Academy of Sciences, Leninskij pr. 53, 119991 Moscow (Russian Federation); Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); National Research Centre ‘Kurchatov Institute’, Kurchatov Sq. 1, 123182 Moscow (Russian Federation); Malakhov, A.I. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation)

    2015-12-15

    Searching of superheavy elements, the charge spectra of heavy nuclei in Galactic Cosmic Rays was investigated within the OLYMPIA experiment using the database of etched ion tracks in meteorite olivine. Etching results in the formation of hollow syringe-like channels with diameters of 1–10 μm along the trajectories of these swift heavy ions (SHI). According to the activated complex theory, the local chemical activity is determined by an increase of the specific Gibbs energy of the lattice stimulated by structure transformations, long-range elastic fields, and interatomic bonds breaking generated in the vicinity of the ion trajectory. To determine the dependencies of the Gibbs free energy increase in SHI tracks in olivine on the mass, energy and charge of a projectile, we apply a multiscale model of excitation and relaxation of materials in the vicinity of the SHI trajectory (SHI tracks). Effect of spreading of fast electrons from the ion trajectory causing neutralization of metallic atoms resulting in an increase of the chemical activity of olivine at long distances from the ion trajectory (up to 5 μm) is estimated and discussed.

  5. A model of chemical etching of olivine in the vicinity of the trajectory of a swift heavy ion

    Science.gov (United States)

    Gorbunov, S. A.; Rymzhanov, R. A.; Starkov, N. I.; Volkov, A. E.; Malakhov, A. I.

    2015-12-01

    Searching of superheavy elements, the charge spectra of heavy nuclei in Galactic Cosmic Rays was investigated within the OLYMPIA experiment using the database of etched ion tracks in meteorite olivine. Etching results in the formation of hollow syringe-like channels with diameters of 1-10 μm along the trajectories of these swift heavy ions (SHI). According to the activated complex theory, the local chemical activity is determined by an increase of the specific Gibbs energy of the lattice stimulated by structure transformations, long-range elastic fields, and interatomic bonds breaking generated in the vicinity of the ion trajectory. To determine the dependencies of the Gibbs free energy increase in SHI tracks in olivine on the mass, energy and charge of a projectile, we apply a multiscale model of excitation and relaxation of materials in the vicinity of the SHI trajectory (SHI tracks). Effect of spreading of fast electrons from the ion trajectory causing neutralization of metallic atoms resulting in an increase of the chemical activity of olivine at long distances from the ion trajectory (up to 5 μm) is estimated and discussed.

  6. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  7. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications.

    Science.gov (United States)

    Alias, Mohd S; Yang, Yang; Ng, Tien K; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I; Priante, Davide; Bakr, Osman M; Ooi, Boon S

    2016-01-01

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  8. Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD

    Directory of Open Access Journals (Sweden)

    Denis V. Nazarov

    2015-12-01

    Full Text Available In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD, chemical etching and atomic layer deposition (ALD. For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions and the etching time have a significant qualitative impact on the nanotitanium surface structure both at the nano- and microscale. The etched samples were coated with crystalline biocompatible TiO2 films with a thickness of 20 nm by Atomic Layer Deposition (ALD. Comparative study of the adhesive and spreading properties of human osteoblasts MG-63 has demonstrated that presence of nano- and microscale structures and crystalline titanium oxide on the surface of nanotitanium improve bioactive properties of the material.

  9. Fabrication of Solid State Nanopore in Thin Silicon Membrane Using Low Cost Multistep Chemical Etching

    Directory of Open Access Journals (Sweden)

    Muhammad Shuja Khan

    2015-11-01

    Full Text Available Nanopore-based analysis is currently an area of great interest in many disciplines with the potential for exceptionally versatile applications in medicine. This work presents a novel step towards fabrication of a single solid-state nanopore (SSSN in a thin silicon membrane. Silicon nanopores are realized using multistep processes on both sides of n-type silicon-on-insulator (SOI <100> wafer with resistivity 1–4 Ω·cm. An electrochemical HF etch with low current density (0.47 mA/cm2 is employed to produce SSSN. Blue LED is considered to emit light in a narrow band region which facilitates the etching procedure in a unilateral direction. This helps in production of straight nanopores in n-type Si. Additionally, a variety of pore diameters are demonstrated using different HF concentrations. Atomic force microscopy is used to demonstrate the surface morphology of the fabricated pores in non-contact mode. Pore edges exhibit a pronounced rounded shape and can offer high stability to fluidic artificial lipid bilayer to study membrane proteins. Electrochemically-fabricated SSSN has excellent smoothness and potential applications in diagnostics and pharmaceutical research on transmembrane proteins and label free detection.

  10. Studies of CR-39 etch rates

    CERN Document Server

    Rana, M A

    2002-01-01

    A series of chemical etching experiments have been carried out on CR-39 detectors irradiated with fission fragments of sup 2 sup 5 sup 2 Cf to study the bulk and track etching characteristics. Experimental data has been analyzed to find out important track etch parameters. Both bulk and track etch rates are found to follow the Arrhenius equation which gives the variation of etch rate with temperature for a specific set of etching conditions. Activation energies for bulk and track etching have been determined by fitting Arrhenius equation to the experimental data. Other track etch parameters, e.g. critical angle of etching and track registration efficiency have also been determined using experimental data. Track etch parameters depend on properties of incident ion and etching conditions. Results describing the dependence of track etch parameters on etching conditions have been presented. These results are useful in the interpretation of track data.

  11. A Sliding-Mode Triboelectric Nanogenerator with Chemical Group Grated Structure by Shadow Mask Reactive Ion Etching.

    Science.gov (United States)

    Shang, Wanyu; Gu, Guang Qin; Yang, Feng; Zhao, Lei; Cheng, Gang; Du, Zu-Liang; Wang, Zhong Lin

    2017-08-25

    The sliding-mode triboelectric nanogenerator (S-TENG) with grated structure has important applications in energy harvest and active sensors; however its concavo-convex structure leads to large frictional resistance and abrasion. Here, we developed a S-TENG with a chemical group grated structure (S-TENG-CGG), in which the triboelectric layer's triboelectric potential has a positive-negative alternating charged structure. The triboelectric layer of the S-TENG-CGG was fabricated through a reactive ion etching process with a metal shadow mask with grated structure. In the etched region, the nylon film, originally positively charged as in friction with stainless steel, gained opposite triboelectric potential and became negatively charged because of the change of surface functional groups. The output signals of the S-TENG-CGG are alternating and the frequency is determined by both the segment numbers and the moving speed. The applications of the S-TENG-CGG in the charging capacitor and driving calculator are demonstrated. In the S-TENG-CGG, since there is no concavo-convex structure, the frictional resistance and abrasion are largely reduced, which enhances its performances in better stability and longer working time.

  12. Antireflective porous-silicon coatings for multicrystalline solar cells: the effects of chemical etching and rapid thermal processing

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Palma, R.J.; Martinez-Duart, J.M. [Universidad Autonoma de Madrid (Spain). Dept. de Fisica Aplicada; Instituto de Ciencia des Materiales de Madrid (CSIC) (Spain); Vazquez, L. [Instituto de Ciencia des Materiales de Madrid (CSIC) (Spain); Schnell, M.; Schaefer, S. [Fraunhofer Institute for Solar Energy Systems, Freiburg (Germany)

    2001-08-01

    In this paper, the emitter of multicrystalline silicon solar cells has been chemically etched in order to form porous silicon (PS) layers, usually known as stain-etched PS, to be used at the same time as a selective emitter and as an effective antireflective layer. The optical behaviour of the solar cells in the 250-850 nm wavelength range (5-1.45 eV range) was determined before and after PS formation, resulting in a notable reduction of reflectance after PS formation and a corresponding increase in cell efficiency. The different morphologies of the silicon emitter and metallic contacts, before and after PS formation were analysed by scanning electron microscopy and atomic force microscopy. Furthermore, the electrical properties of both the emitter region and the contacts were investigated, as well as the most significant solar cell parameters before and after PS formation. Finally, the effect of rapid thermal processing in nitrogen and oxygen atmospheres on both the surface morphology and the optical behaviour of PS was studied. (Author)

  13. Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Papet, P.; Nichiporuk, O.; Kaminski, A.; Rozier, Y.; Kraiem, J.; Lelievre, J.-F.; Chaumartin, A.; Fave, A.; Lemiti, M. [Laboratoire de Physique de la Matiere, UMR-CNRS 5511, Institut National des Sciences Appliquees de Lyon, Bat Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2006-09-22

    High-efficiency silicon solar cells need a textured front surface to reduce reflectance and to improve light trapping. Texturing of monocrystalline silicon is usually done in alkaline solutions. These solutions are cheaper, but are pollutants of silicon technologies. In this paper, we investigate an alternative solution containing tetramethyl ammonium hydroxide ((CH{sub 3}){sub 4}NOH, TMAH ). This study shows the influence of different parameters (concentration, agitation, duration and temperature), to obtain uniform and reliable pyramidal texturization on different silicon surfaces (as cut, etched and polished). Under optimized conditions, TMAH-textured surface led to an average weighted reflectance of 13%, without any antireflection coating independent of the initial silicon surface. Unlike potassium hydroxide (KOH) texturing solution, characterization of silicon oxide layer contamination after TMAH texturing process revealed no pollution, and passivation is less affected by TMAH than by KOH texturization. (author)

  14. The influence of H2O2 concentration to the structure of silicon nanowire growth by metal-assisted chemical etching

    Science.gov (United States)

    Omar, Hafsa; Jani, Abdul Mutalib Md.; Rusop, Mohamad; Abdullah, Saifollah

    2016-07-01

    A simple and low cost method to produce well aligned silicon nanowires at large areas using Ag-assisted chemical etching at room temperature were presented. The structure of silicon nanowires growth by metal-assisted chemical etching was observed. Prior to the etching, the silicon nanowires were prepared by electroless metal deposited (EMD) in solution containing hydrofluoric acid and hydrogen peroxide in Teflon vessel. The silver particle was deposited on substrate by immersion in hydrofluoric acid and silver nitrate solution for sixty second. The silicon nanowires were growth in different hydrogen peroxide concentration which are 0.3M, 0.4M, 0.5M and 0.6M and 0.7M.The influence of hydrogen peroxide concentration to the formation of silicon nanowires was studied. The morphological properties of silicon nanowires were investigated using field emission scanning electron microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDS).

  15. Regular growth combined with lateral etching in diamond deposited over silicon substrate by using hot filament chemical vapor deposition technique

    Science.gov (United States)

    Ali, M.; Ürgen, M.

    2013-05-01

    Hot filament chemical vapor deposition has proved to be an attractive method for growing diamond films with good quality and higher growth rate. Diamond films were produced at deposition parameters under which, it is possible to have regular growth combined with lateral etching (RGCLE). Fracture cross-section SEM images showed that RGCLE initiated over polycrystalline diamond film and proceeded by the growth of consecutive steps in each crystallite, which terminated with square/rectangle shaped facets. All the diamond films exhibit RGCLE but with different type of growth behavior. Present work discusses the cyclic formation of the steps in diamond crystallites and RGCLE modes. RGCLE in diamond film may find important applications where heat absorption and dissipation are key issues.

  16. Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers

    Energy Technology Data Exchange (ETDEWEB)

    Gonchar, K. A., E-mail: k.a.gonchar@gmail.com; Osminkina, L. A. [Moscow State University, Faculty of Physics (Russian Federation); Sivakov, V. [Leibniz Institute of Photonic Technology (Germany); Lysenko, V. [Institut National des Sciences Appliquées (INSA) de Lyon, Nanotechnology Institute of Lyon (France); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

    2014-12-15

    Layers of Si nanowires produced by the metal-assisted chemical etching of (100)-oriented single-crystal p-Si wafers with a resistivity of 1–20 Ω · cm are studied by reflectance spectroscopy, Raman spectros-copy, and photoluminescence measurements. The nanowire diameters are 20–200 nm. The wafers are supplied by three manufacturing companies and distinguished by their different lifetimes of photoexcited charge carriers. It is established that the Raman intensity for nanowires longer than 1 μm is 3–5 times higher than that for the substrates. The interband photoluminescence intensity of nanowires at the wavelength 1.12 μm is substantially higher than that of the substrates and reaches a maximum for samples with the longest bulk lifetime, suggesting a low nonradiative recombination rate at the nanowire surfaces.

  17. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  18. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4 and SiO2

    Science.gov (United States)

    Liu, Li-Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D.; Zuilhof, Han; Chabal, Yves J.

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  19. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

    Science.gov (United States)

    Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J

    2016-03-09

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  20. High haze textured surface B-doped ZnO-TCO films on wet-chemically etched glass substrates for thin film solar cells

    Science.gov (United States)

    Xinliang, Chen; Jieming, Liu; Jia, Fang; Ze, Chen; Ying, Zhao; Xiaodan, Zhang

    2016-08-01

    Textured glass substrates with crater-like feature sizes of ˜5-30 μm were obtained using the chemical etching method through adjusting the treatment round (R). Pyramid-like boron-doped zinc oxide (ZnO:B) films with feature sizes of ˜300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition (MOCVD) technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO:B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO:B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO:B exhibited a high root mean square (RMS) roughness of ˜160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO:B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO:B was applied in the silicon (Si) based thin film solar cells. The high haze etched glass/ZnO:B substrates have potential merits for thin film solar cells. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

  1. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide - Selective functionalization of Si

    NARCIS (Netherlands)

    Liu, Li Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Zuilhof, Han

    2016-01-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be careful

  2. SEMICONDUCTOR MATERIALS: Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

    Science.gov (United States)

    Xiaofeng, Chen; Nuofu, Chen; Jinliang, Wu; Xiulan, Zhang; Chunlin, Chai; Yude, Yu

    2009-08-01

    A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.

  3. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching.

    Science.gov (United States)

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-12-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

  4. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

    Science.gov (United States)

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-01-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

  5. Near-infrared absorptance enhancement and device application of nanostructured black silicon fabricated by metal-assist chemical etching

    Science.gov (United States)

    Huang, Lieyun; Zhong, Hao; Liao, Naiman; Long, Fei; Guo, Guohui; Li, Wei

    2016-11-01

    We use metal-assist chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. In our MCE process, a chemical reduction reaction of silver cation (Ag+) will happen on the surface of silicon substrate, and at the same time the silicon atoms around Ag particles are oxidized and dissolved, generating nanopores and finally forming a layer called black silicon on the top of the substrates. The nanopores have diameter and depth of about 400 nm and 2 μm, respectively. Furthermore, these modified surfaces show higher light absorptance in near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the maximum light absorptance increases significantly up to 95% in the wavelength region of 400 to 2500 nm. The Si-PIN photoelectronic detector based on this type of black silicon, in which the black silicon layer is directly set as the photosensitive surface, has a substantial increase in responsivity with about 80 nm red shift of peak responsivity, particularly at near-infrared wavelengths, rising to 0.57 A/W at 1060 nm and 0.37 A/W at 1100 nm, respectively. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has a potential application in near-infrared photoelectronic detectors.

  6. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  7. 生物电阻抗铜片电极的化学刻蚀工艺%Chemical etching process of copper electrode for bioelectrical impedance technology

    Institute of Scientific and Technical Information of China (English)

    周伟; 宋嵘; 蒋乐伦; 许文平; 梁国开; 程德才; 刘灵蛟

    2012-01-01

    为获得具有强稳定性能的生物电阻抗电极,采用化学刻蚀加工方法,制造出表面具有一系列微结构的金属铜片电极.通过改变加工工艺参数的方法,着重分析刻蚀时间、刻蚀温度、刻蚀液体浓度、样品尺寸等刻蚀工艺参数对铜片电极的蚀刻速率和表面微结构的影响.结果表明:刻蚀速率将随着刻蚀时间的延长而逐渐降低,随着刻蚀温度的升高而逐渐升高,而刻蚀样本尺寸对刻蚀速率的影响不大.选用合适的刻蚀液体浓度(组分3),在室温条件下刻蚀20 min,可以获得具有丰富表面微结构的铜片电极.另外,进行24 h电极对接的连续性交流阻抗测试,与心电电极相比,利用化学刻蚀加工的铜片电极,由于表面具有丰富的表面微结构,可以形成可靠的表面接触,从而具有稳定的交流阻抗值.%In order to obtain bioelectrical impedance electrodes with high stability,the chemical etching process was used to fabricate the copper electrode with a series of surface microstructures.By changing the etching processing parameters,some comparison experiments were performed to reveal the influence of etching time,etching temperature,etching liquid concentration,and sample sizes on the etching rate and surface microstructures of copper electrode.The result shows that the etching rate is decreased with increasing etching time,and is increased with increasing etching temperature.Moreover,it is found that the sample size has little influence on the etching rate.After choosing the reasonable etching liquid composition (formulation 3),the copper electrode with many surface microstructures can be obtained by chemical etching process at room temperature for 20 min.In addition,using the alternating current impedance test of electrode-electrode for 24 h,the copper electrode with a series of surface microstructures fabricated by the etching process presents a more stable impedance value compared with the

  8. Bi-assisted chemical etching of silicon in HF/Co(NO{sub 3}){sub 2} solution

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, N. [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Hadjersi, T. [Unite de Developpement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria)], E-mail: hadjersi@yahoo.com; Elkechai, O.; Douani, R. [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Guerbous, L. [Centre de Recherche Nucleaire d' Alger (CRNA) COMENA 2, Bd. Frantz Fanon, Alger (Algeria)

    2009-03-15

    The morphology and the photoluminescence (PL) of Bi-assisted electroless etched p-type silicon in HF-Co(NO{sub 3}){sub 2}-H{sub 2}O solution as a function of etching time were studied. The scanning electron microscopy (SEM) observations have shown that the morphology of etched layers strongly depends on the etching time and it was observed that macropores filled with silicon crystallites are formed for etching time higher than 50 min. Moreover, it was found that the PL spectra show a red emission with a peak centred at 640 nm. The PL peak intensity reaches a maximum for etching time of 50 min, and then it decreases with increasing etching time. The Fourier transform infrared (FTIR) measurements have shown a strong increase in intensities of the relevant Si-H and in the amount of oxide (absorption band at 1070 cm{sup -1}) for long etching time which was ascribed to an increase in the number of Si crystallites formed in the macropores.

  9. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    Production of large-area flat panel displays (FPDs) involves several pattern transfer and device fabrication steps that can be performed with dry etching technologies. Even though the dry etching using capacitively coupled plasma is generally used to maintain high etch uniformity, due to the need...... for the higher processing rates in FPDs, high-density plasma processing tools that can handle larger-area substrate uniformly are more intensively studied especially for the dry etching of polysilicon thin films. In the case of FPD processing, the current substrate size ranges from 730 × 920 mm (fourth...... generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  10. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process.

  11. Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics

    Science.gov (United States)

    Srivastava, Sanjay K.; Kumar, Dinesh; Schmitt, S. W.; Sood, K. N.; Christiansen, S. H.; Singh, P. K.

    2014-05-01

    Vertically aligned silicon nanowire (SiNW) arrays have been fabricated over a large area using a silver-assisted single-step electroless wet chemical etching (EWCE) method, which involves the etching of silicon wafers in aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. A comprehensive systematic investigation on the influence of different parameters, such as the etching time (up to 15 h), solution temperature (10-80 °C), AgNO3 (5-200 mM) and HF (2-22 M) concentrations, and properties of the multi-crystalline silicon (mc-Si) wafers, is presented to establish a relationship of these parameters with the SiNW morphology. A linear dependence of the NW length on the etch time is obtained even at higher temperature (10-50 °C). The activation energy for the formation of SiNWs on Si(100) has been found to be equal to ˜0.51 eV . It has been shown for the first time that the surface area of the Si wafer exposed to the etching solution is an important parameter in determining the etching kinetics in the single-step process. Our results establish that single-step EWCE offers a wide range of parameters by means of which high quality vertical SiNWs can be produced in a very simple and controlled manner. A mechanism for explaining the influence of various parameters on the evolution of the NW structure is discussed. Furthermore, the SiNW arrays have extremely low reflectance (as low as <3% for Si(100) NWs and <12% for mc-Si NWs) compared to ˜35% for the polished surface in the 350-1000 nm wavelength range. The remarkably low reflection surface of SiNW arrays has great potential for use as an effective light absorber material in novel photovoltaic architectures, and other optoelectronic and photonic devices.

  12. Fabrication of substrates with curvature for cell cultivation by alpha-particle irradiation and chemical etching of PADC films

    Energy Technology Data Exchange (ETDEWEB)

    Ng, C.K.M.; Tjhin, V.T. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Lin, A.C.C.; Cheng, J.P.; Cheng, S.H. [Department of Biology and Chemistry, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Yu, K.N., E-mail: peter.yu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2012-05-01

    In the present paper, we developed a microfabrication technology to generate cell-culture substrates with identical chemistry and well-defined curvature. Micrometer-sized pits with curved surfaces were created on a two-dimensional surface of a polymer known as polyallyldiglycol carbonate (PADC). A PADC film was first irradiated by alpha particles and then chemically etched under specific conditions to generate pits with well-defined curvature at the incident positions of the alpha particles. The surface with these pits was employed as a model system for studying the effects of substrate curvature on cell behavior. As an application, the present work studied mechanosensing of substrate curvature by epithelial cells (HeLa cells) through regulation of microtubule (MT) dynamics. We used end-binding protein 3-green fluorescent protein (EB3-GFP) as a marker of MT growth to show that epithelial cells having migrated into the pits with curved surfaces had significantly smaller MT growth speeds than those having stayed on flat surfaces without the pits.

  13. Inverted organic solar cells with ZnO nanowalls prepared using wet chemical etching in a KOH solution.

    Science.gov (United States)

    Shin, Kyung-Sik; Park, Hye-Jeong; Kumar, Brijesh; Kim, Kwon-Ho; Kim, Sang-Hyeob; Kim, Sang-Woo

    2012-02-01

    We report on the photovoltaic (PV) performances of inverted organic solar cells (IOSCs) that were fabricated from PCBM:P3HT polymer with a ZnO thin film and ZnO nanowalls as electron transport and hole block layers. ZnO thin film on ITO/glass substrate was deposited using a simply aqueous solution route. ZnO nanowall structures were obtained via wet chemical etching of ZnO thin films in a KOH solution. The power conversion efficiency (PCE) of the IOSC with ZnO nanowalls was significantly improved by 44% from 1.254% to 1.811% compared to that of the IOSC with ZnO thin film. The short circuit current in IOSCs fabricated with the ZnO nanowalls was increased mainly due to the increase in the charge transport interface area, as a result of enhancement in the PCE. This work suggests a method for fabricating efficient PV devices with a larger charge transport area for future prospects.

  14. Fabrication of silicon nanowire arrays by near-field laser ablation and metal-assisted chemical etching

    Science.gov (United States)

    Brodoceanu, D.; Alhmoud, H. Z.; Elnathan, R.; Delalat, B.; Voelcker, N. H.; Kraus, T.

    2016-02-01

    We present an elegant route for the fabrication of ordered arrays of vertically-aligned silicon nanowires with tunable geometry at controlled locations on a silicon wafer. A monolayer of transparent microspheres convectively assembled onto a gold-coated silicon wafer acts as a microlens array. Irradiation with a single nanosecond laser pulse removes the gold beneath each focusing microsphere, leaving behind a hexagonal pattern of holes in the gold layer. Owing to the near-field effects, the diameter of the holes can be at least five times smaller than the laser wavelength. The patterned gold layer is used as catalyst in a metal-assisted chemical etching to produce an array of vertically-aligned silicon nanowires. This approach combines the advantages of direct laser writing with the benefits of parallel laser processing, yielding nanowire arrays with controlled geometry at predefined locations on the silicon surface. The fabricated VA-SiNW arrays can effectively transfect human cells with a plasmid encoding for green fluorescent protein.

  15. GALAH Survey: Chemically Tagging the Thick Disk

    CERN Document Server

    Bland-Hawthorn, J; Freeman, K

    2015-01-01

    The GALAH survey targets one million stars in the southern hemisphere down to a limiting magnitude of V = 14 at the Anglo- Australian Telescope. The project aims to measure up to 30 elemental abundances and radial velocities (~1 km/s accuracy) for each star at a resolution of R = 28000. These elements fall into 8 independent groups (e.g. alpha, Fe peak, r-process). For all stars, Gaia will provide distances to 1% and transverse velocities to 1 km/s or better, giving us a 14D set of parameters for each star, i.e. 6D phase space and 8D abundance space. There are many scientic applications but here we focus on the prospect of chemically tagging the thick disk and making a direct measurement of how stellar migration evolves with cosmic time.

  16. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

    Institute of Scientific and Technical Information of China (English)

    Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude

    2009-01-01

    uring crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.

  17. Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hossain,A.; Babalola, S.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Yang, G.; Guo, M.; Kochanowska, D.; Mycielski, A.; Burger, A.; James, R.B.

    2008-08-11

    Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 {micro}m and/or lower grits of Al{sub 2}O{sub 3} abrasive papers including final polishing with 0.05-{micro}m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO{sub 3}:H{sub 2}O:Cr{sub 2}O{sub 7}). The material removal rate (etching rate) from the crystals was found to be 10 {micro}m, 30 {micro}m, and 15 {micro}m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing.

  18. Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions

    Science.gov (United States)

    Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

    2017-04-01

    Indium arsenide (InAs) is the candidate of choice as a new channel material for application in future technologies beyond the Si-based electronic devices because it has a much higher electron mobility than silicon. In this study, the oxidation and etching behaviors of InAs (100) in various acidic and basic solutions, such as HF, HCl, H2SO4, NaOH, KOH, and NH4OH, were investigated. In addition, the effect of pH on the oxidation and etching reactions taking place on the InAs surface was studied using solutions with a pH ranging from 1 to 13. It was observed that the oxidation of the InAs surface was hindered in acidic solutions, which was attributed to the dissolution of the oxidized surface layer. In particular, the treatment of the InAs surface using a strongly acidic solution with a pH of less than 3 produced an oxide-free surface due to the predominant etching of the InAs surface. The addition of H2O2 to the acidic solutions greatly increased the etching rate of the InAs surface, which suggests that the oxidation process is the rate-limiting step in the sequence of reactions that occur during the etching of the InAs surface in acidic solutions. The etching of InAs was suppressed in neutral solutions, which resulted in the formation of a relatively thicker oxide layer on the surface, and mild etching of the InAs surface took place in basic solutions. However, in basic solutions, the addition of H2O2 did not significantly contribute to the increase of the oxidation state of the InAs surface; thus, its effect on the etching rate of InAs was smaller than in acidic solutions.

  19. Research Progress in Wet Chemical Etching of Silicate Glass%硅酸盐玻璃的化学处理研究进展

    Institute of Scientific and Technical Information of China (English)

    成惠峰; 李要辉; 吴云龙; 傅国英; 纪毅璞

    2011-01-01

    氢氟酸溶液常用于硅酸盐玻璃的表面处理,其化学反应机理一直备受关注.本文从氢氟酸电离反应出发,全面归纳氢氟酸稀溶液电离机理、平衡常数以及各电离产物的作用,重点总结了HF-SiO2反应动力学、各研究理论模型、反应速率公式和反应机理.针对目前硅酸盐玻璃的化学处理研究现状,认为硅酸盐玻璃在高浓度氢氟酸溶液和氢氟酸/强酸混合溶液中化学处理的应用将是未来的研究方向.%The reaction mechanism of wet chemical etching of silicate glass in hydrofluoric acid has attracted extensive attention over many years. Ionization reaction in dilute HF solution was introduced. The ionization equation and equilibrium constants and the function of components in dilute HF solution were reviewed. And the reaction kinetics, model, reaction rate formula and etching mechanism of HF-SiO2 reaction were summarized. In the future the application of wet chemical etching in concentrated HF solution and HF-strong acid mixture of wet chemical etching of silicate glass would be studied.

  20. Array of chemically etched fused-silica emitters for improving the sensitivity and quantitation of electrospray ionization mass spectrometry.

    Science.gov (United States)

    Kelly, Ryan T; Page, Jason S; Tang, Keqi; Smith, Richard D

    2007-06-01

    An array of emitters has been developed for increasing the sensitivity of electrospray ionization mass spectrometry (ESI-MS). The linear array consists of 19 chemically etched fused-silica capillaries arranged with 500 microm (center-to-center) spacing. The multiemitter device has a low dead volume to facilitate coupling to capillary liquid chromatography (LC) separations. The high aspect ratio of the emitters enables operation at flow rates as low as 20 nL/min/emitter, effectively extending the benefits of nanoelectrospray to higher flow rate analyses. To accommodate the larger ion current produced by the emitter array, a multicapillary inlet to the mass spectrometer was also constructed. The inlet, which matched the dimensions of the emitter array, preserved ion transmission efficiency. Standard reserpine solutions of varying concentration were electrosprayed at 1 microL/min using the multiemitter/multi-inlet combination, and the results were compared to those from a standard, single-emitter configuration. A 9-fold sensitivity enhancement was observed for the multiemitter relative to the single emitter. A bovine serum albumin tryptic digest was also analyzed, and a sensitivity increase ranging from 2.4- to 12.3-fold for the detected tryptic peptides resulted; the varying response was attributed to reduced ion suppression under the nanoESI conditions afforded by the emitter array. An equimolar mixture of leucine enkephalin and maltopentaose was studied to verify that ion suppression is indeed reduced for the multiplexed ESI (multi-ESI) array relative to a single emitter over a range of flow rates.

  1. GALAH Survey: Chemical tagging and disk reconstruction

    Science.gov (United States)

    Bland-Hawthorn, J.; Sharma, S.

    2016-09-01

    The GALAH survey is now in its second year of a five-year campaign to observe roughly one million stars in the southern hemisphere down to a limiting magnitude of {V=14}. The project exploits the HERMES 400-fibre échelle spectrograph at the Anglo-Australian Telescope to measure up to 30 elemental abundances and radial velocities (≈1 km s-1 accuracy) for each star at a resolution of {R=28 000}. These elements fall into 8 independent groups (e.g. α, Fe peak, s-process). For all GALAH stars, Gaia will provide distances to 1% and transverse velocities to 1 km s-1 or better, giving us a 14D set of parameters for each star, i.e. 6D phase space and 8D abundance space. A few percent of GALAH stars will also have Kepler K2 seismological data. Here we focus on the prospect of chemically tagging the old stellar disk and making a direct measurement of how stellar migration evolves with cosmic time.

  2. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    Science.gov (United States)

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films.

  3. Ordered silicon nanowire arrays prepared by an improved nanospheres self-assembly in combination with Ag-assisted wet chemical etching

    Science.gov (United States)

    Jia, Guobin; Westphalen, Jasper; Drexler, Jan; Plentz, Jonathan; Dellith, Jan; Dellith, Andrea; Andrä, Gudrun; Falk, Fritz

    2016-04-01

    An improved Langmuir-Blodgett self-assembly process combined with Ag-assisted wet chemical etching for the preparation of ordered silicon nanowire arrays is presented in this paper. The new process is independent of the surface conditions (hydrophilic or hydrophobic) of the substrate, allowing for depositing a monolayer of closely packed polystyrene nanospheres onto any flat surface. A full control of the morphology of the silicon nanowire is achieved. Furthermore, it is observed that the formation of porous-Si at the tips of the nanowires is closely related to the release of Ag nanoparticles from the Ag mask during the etching, which subsequently redeposit on the surface initially free of Ag, and these Ag nanoparticles catalyze the etching of the tips and lead to the porous-Si formation. This finding will help to improve the resulting nano- and microstructures to get them free of pores, and renders it a promising technology for low-cost high throughput fabrication of specific optical devices, photonic crystals, sensors, MEMS, and NEMS by substituting the costly BOSCH process. It is shown that ordered nanowire arrays free of porous structures can be produced if all sources of Ag nanoparticles are excluded, and structures with aspect ratio more than 100 can be produced.

  4. 化学气相沉积法制备的石墨烯晶畴的氢气刻蚀∗%Hydrogen etching of chemical vap or dep osition-grown graphene domains

    Institute of Scientific and Technical Information of China (English)

    王彬; 冯雅辉; 王秋实; 张伟; 张丽娜; 马晋文; 张浩然; 于广辉; 王桂强

    2016-01-01

    In this paper we analyze the reason of the etching trenches in chemical vapor deposition (CVD) graphene domain and study the influence factor in the distribution and morphology of wrinkles. Graphene is synthesized on Cu substrate. The Cu substrate is annealed at 1050 ◦C for 60 min with 1000 sccm Ar and 200 sccm H2. After annealing, 500 sccm Ar, 20 sccm H2, and 1 sccm dilute CH4 (mixed with Ar) are introduced into the CVD system for graphene growth. Hydrogen etchings of graphene are conducted with flows of 500 sccm Ar and 200 sccm H2 at atmospheric pressure, and etching are performed at 950 and 1050 ◦C. The striated and reticular etching trenches are observed after etching via optical microscope and scanning electron microscope. Every graphene domain is divided into island structures by these etching trenches. However, the edge of graphene domain is not etched and the size of domain is not changed. Electron backscatter diffraction (EBSD) is conducted to analyze the different morphologies of etching trenches. According to the EBSD analysis, the etching trench is closely associated with the Cu crystal orientation. Different Cu planes result in differences in mode, shape, and density of the etching trench. We conduct a verification experiment to judge whether the etching trenches are caused by the gaps between graphene and Cu substrate or by the hydrogenation of wrinkles. The graphene domains grown on Cu substrate with the same growth condition are etched immediately after growth without cooling process. We select graphene which grows across the Cu grain boundary, via optical microscope. A small number of regular hexagons are observed in graphene surface and the region of Cu boundary, but no etching trench is found. As the graphene growing across Cu boundary is the suspending graphene and there is no etching trench, we consider that the gap between graphene and Cu species is not a significant factor of forming etching trench. For comparison, the etching trenches

  5. Etching zircon age standards for fission-track analysis

    Energy Technology Data Exchange (ETDEWEB)

    Garver, J.I. E-mail: garverj@union.edu

    2003-02-01

    Nineteen laboratories that routinely measure fission-track ages in zircon were surveyed as to their principal methodology used for track revelation using chemical attack and counting procedures. The survey results show the following: (a) researchers in most labs count fission tracks with a optical microscope using at a total magnification between 1250x and 1600x ({approx}80%) with about an equal number using either a dry or oil objective (b) the majority of laboratories etch zircon with a KOH:NaOH eutectic heated in an oven between temperatures of 210 deg. C and 230 deg. C; (c) ag standards in zircon analysis do not have uniformly accepted etch times. Etching times for the widely used 28 Ma Fish Canyon Tuff (FCT) (4-60 h) and the lesser-used 16 Ma Buluk Tuff (13-55 h) vary significantly from lab to lab. Between {approx}220 deg. C and 230 deg. C, the principal range fo etching times for the FCT is between 20 and 30 h, and the mode for the Buluk Tuff is between 30 and 55 h. Three or fewer labs report etching times for the Tardee Rhyolite (22-40 h), the Bishop Tuff (10-46 h), and the Mt. Dromedary Banite (5-24 h). Variation in etching times may result in a bias in U-content which affects counting statistics. If etching is successful, strict criteria must be followed to ensure that the analyst only counts well-etched grains and that all tracks are successfully identified.

  6. Novel Folding Large-Scale Optical Switch Matrix with Total Internal Reflection Mirrors on Silicon-on-Insulator by Anisotropy Chemical Etching

    Institute of Scientific and Technical Information of China (English)

    LIU Jing-Wei; YU Jin-Zhong; CHEN Shao-Wu

    2005-01-01

    A compact optical switch matrix was designed, in which light circuits were folded by total internal reflective (TIR) mirrors. Two key elements, 2 × 2 switch and TIR mirror, have been fabricated on silicon-on-insulator wafer by anisotropy chemical etching. The 2 × 2 switch showed very low power consumption of 140mW and avery high speed of 8 ± 1 μs. An improved design for the TIR mirror was developed, and the fabricated mirror with smooth and vertical reflective facet showed low excess loss of 0.7 ± 0.3 dB at 1.55μm.

  7. Survey of chemical constituents of Tehran's groundwater.

    Science.gov (United States)

    Shariatpanahi, M; Anderson, A C

    1987-12-01

    One hundred and forty wells throughout the City of Tehran and its environs were sampled to determine the chemical quality of the groundwater. Total alkalinity, pH, conductivity, total dissolved solids, hardness and detergent concentrations were determined as well as levels of bicarbonate, calcium, magnesium, sulphate, chloride, sodium, potassium, fluoride, iodide and nitrate. Generally, chemical pollution of the water supplies was low. There were, however, regional elevations in nitrate, chloride and fluoride. Elevated fluoride levels were primarily in the northern regions of the city while high nitrates and chlorides were found primariiy in industrial areas. The health implications of chemical constituents in drinking water are discussed.

  8. Silver-Assisted Chemical Etching of Semiconductor Materials%银辅助化学刻蚀半导体材料

    Institute of Scientific and Technical Information of China (English)

    耿学文; 贺春林; 徐仕翀; 李俊刚; 朱丽娟; 赵连城

    2012-01-01

    微电子器件的发展趋势是小型化和多功能化,这就对半导体材料的加工技术提出了更高的要求。与传统的加工技术相比,近年发展起来的贵金属粒子辅助化学刻蚀半导体材料制备微结构技术因操作简单、不需要精密设备、反应迅速和可批量生产等优点引起了国内外学者的广泛关注。本文以Si为主,详细介绍了Ag辅助化学刻蚀半导体材料的机理、反应现象及影响因素,总结了各种微结构的制备技术及其应用。此外,对Ge,Si1-xGex和GaAs等其他半导体材料的贵金属粒子辅助化学刻蚀技术也进行了综述。同时分析了贵金属粒子辅助化学刻蚀半导体目前存在的问题,并对未来的研究方向进行了展望。%Semiconductors with various structural morphologies are widely used in areas of electronics, optoelectronics, photovohaics, sensors and thermoelectrics. The fabrication of solid-state micro/nanostructures has been motivated by the miniaturization and multi-functionality of microelectronic devices. Although some traditional methods can be used for texturization treatment of semiconductors, their applications are limited to some extent owing to their intrinsic disadvantages. Recently, the technologies of noble metal-assisted chemical etching (MacEtch) of semiconductors to produce micro/nanostructures have been paid much attention due to their relatively simple processes, fast reacting rate, low cost, and applicability for mass production etc. In this review, firstly, the MacEtch mechanisms, reaction phenomena and effect factors (including the depositing methods, distribution, sizes, shape of Ag particles, and the composition of etchants) of Ag-assisted chemical etching of Si semiconductor are discussed in detail. And then the fabrication technologies of various microstructures such as porous Si, Si nanostructures, silicon nanowire arrays, and quasi-ordered micro/nanostructures are introduced to

  9. A study on the fabrication of superhydrophobic iron surfaces by chemical etching and galvanic replacement methods and their anti-icing properties

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kunquan, E-mail: likunquan1987@gmail.com; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Li, Hongqiang, E-mail: hqli1979@gmail.com; Lai, Xuejun, E-mail: msxjlai@scut.edu.cn

    2015-08-15

    Graphical abstract: - Highlights: • Superhydrophobic iron surfaces were prepared by etching and replacement method. • The fabrication process was simple, time-saving and inexpensive. • Galvanic replacement method was more favorable to create roughness on iron surface. • The superhydrophobic iron surface showed excellent anti-icing properties. - Abstract: Hierarchical structures on iron surfaces were constructed by means of chemical etching by hydrochloric acid (HCl) solution or the galvanic replacement by silver nitrate (AgNO{sub 3}) solution. The superhydrophobic iron surfaces were successfully prepared by subsequent hydrophobic modification with stearic acid. The superhydrophobic iron surfaces were characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and water contact angle (WCA). The effects of reactive concentration and time on the microstructure and the wetting behavior were investigated. In addition, the anti-icing properties of the superhydrophobic iron surfaces were also studied. The FTIR study showed that the stearic acid was chemically bonded onto the iron surface. With the HCl concentration increase from 4 mol/L to 8 mol/L, the iron surface became rougher with a WCA ranging from 127° to 152°. The AgNO{sub 3} concentration had little effect on the wetting behavior, but a high AgNO{sub 3} concentration caused Ag particle aggregates to transform from flower-like formations into dendritic crystals, owing to the preferential growth direction of the Ag particles. Compared with the etching method, the galvanic replacement method on the iron surface more favorably created roughness required for achieving superhydrophobicity. The superhydrophobic iron surface showed excellent anti-icing properties in comparison with the untreated iron. The icing time of water droplets on the superhydrophobic surface was delayed to 500 s, which was longer than that of 295 s for

  10. Selective Laser Sintering And Melting Of Pristine Titanium And Titanium Ti6Al4V Alloy Powders And Selection Of Chemical Environment For Etching Of Such Materials

    Directory of Open Access Journals (Sweden)

    Dobrzański L.A.

    2015-09-01

    Full Text Available The aim of the investigations described in this article is to present a selective laser sintering and melting technology to fabricate metallic scaffolds made of pristine titanium and titanium Ti6Al4V alloy powders. Titanium scaffolds with different properties and structure were manufactured with this technique using appropriate conditions, notably laser power and laser beam size. The purpose of such elements is to replace the missing pieces of bones, mainly cranial and facial bones in the implantation treatment process. All the samples for the investigations were designed in CAD/CAM (3D MARCARM ENGINEERING AutoFab (Software for Manufacturing Applications software suitably integrated with an SLS/SLM system. Cube-shaped test samples dimensioned 10×10×10 mm were designed for the investigations using a hexagon-shaped base cell. The so designed 3D models were transferred to the machine software and the actual rapid manufacturing process was commenced. The samples produced according to the laser sintering technology were subjected to chemical processing consisting of etching the scaffolds’ surface in different chemical mediums. Etching was carried out to remove the loosely bound powder from the surface of scaffolds, which might detach from their surface during implantation treatment and travel elsewhere in an organism. The scaffolds created were subjected to micro- and spectroscopic examinations

  11. Results of the 2010 Survey on Teaching Chemical Reaction Engineering

    Science.gov (United States)

    Silverstein, David L.; Vigeant, Margot A. S.

    2012-01-01

    A survey of faculty teaching the chemical reaction engineering course or sequence during the 2009-2010 academic year at chemical engineering programs in the United States and Canada reveals change in terms of content, timing, and approaches to teaching. The report consists of two parts: first, a statistical and demographic characterization of the…

  12. Results of the 2010 Survey on Teaching Chemical Reaction Engineering

    Science.gov (United States)

    Silverstein, David L.; Vigeant, Margot A. S.

    2012-01-01

    A survey of faculty teaching the chemical reaction engineering course or sequence during the 2009-2010 academic year at chemical engineering programs in the United States and Canada reveals change in terms of content, timing, and approaches to teaching. The report consists of two parts: first, a statistical and demographic characterization of the…

  13. Stellar Abundance and Galactic Chemical Evolution through LAMOST Spectroscopic Survey

    Institute of Scientific and Technical Information of China (English)

    Gang Zhao; Yu-Qin Chen; Jian-RongShi; Yan-Chun Liang; Jin-Liang Hou; Li Chen; Hua-Wei Zhang; Ai-Gen Li

    2006-01-01

    A project of a spectroscopic survey of Galactic structure and evolution with a Large sky Area Multi-Object fiber Spectroscopic Telescope (LAMOST) is presented. The spectroscopic survey consists of two observational modes for various targets in our Galaxy. One is a major survey of the Milky Way aimed at a systematic study of the stellar abundance and Galactic chemical evolution through low resolution (R=1000 - 2000) spectroscopy.Another is a follow-up observation with medium resolution (R=10000) spectrographs aimed at detailed studies of the selected stars with different chemical composition, kinematicsand dynamics.

  14. The Open Cluster Chemical Abundances from Spanish Observatories Survey (OCCASO)

    Science.gov (United States)

    Carrera, R.; Casamiquela, L.; Balaguer-Núñez, L.; Jordi, C.; Pancino, E.; Allende-Prieto, C.; Blanco-Cuaresma, S.; Martínez-Vázquez, C. E.; Murabito, S.; del Pino, A.; Aparicio, A.; Gallart, C.; Recio-Blanco, A.

    2016-10-01

    We present the motivation, design and current status of the Open Cluster Chemical Abundances from Spanish Observatories survey (OCCASO). Using the high resolution spectroscopic facilities available at Spanish observatories, OCCASO will derive chemical abundances in a sample of 20 to 25 OCs older than 0.5 Gyr. This sample will be used to study in detail the formation and evolution of the Galactic disk using OCs as tracers.

  15. The Open Cluster Chemical Abundances from Spanish Observatories survey (OCCASO)

    CERN Document Server

    Carrera, R; Balaguer-Núñez, L; Jordi, C; Pancino, E; Allende-Prieto, C; Blanco-Cuaresma, S; Mártinez-Vázquez, C E; Murabito, S; del Pino, A; Aparicio, A; Gallart, C; Recio-Blanco, A

    2014-01-01

    We present the motivation, design and current status of the Open Cluster Chemical Abundances from Spanish Observatories survey (OCCASO). Using the high resolution spectroscopic facilities available at Spanish observatories, OCCASO will derive chemical abundances in a sample of 20 to 25 open clusters older than 0.5 Gyr. This sample will be used to study in detail the formation and evolution of the Galactic disc using open clusters as tracers.

  16. PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method

    Science.gov (United States)

    van Ngoc, Huynh; Qian, Yongteng; Han, Suk Kil; Kang, Dae Joon

    2016-09-01

    We have explored a facile technique to transfer large area 2-Dimensional (2D) materials grown by chemical vapor deposition method onto various substrates by adding a water-soluble Polyvinyl Alcohol (PVA) layer between the polymethyl-methacrylate (PMMA) and the 2D material film. This technique not only allows the effective transfer to an arbitrary target substrate with a high degree of freedom, but also avoids PMMA etching thereby maintaining the high quality of the transferred 2D materials with minimum contamination. We applied this method to transfer various 2D materials grown on different rigid substrates of general interest, such as graphene on copper foil, h-BN on platinum and MoS2 on SiO2/Si. This facile transfer technique has great potential for future research towards the application of 2D materials in high performance optical, mechanical and electronic devices.

  17. Cobalt hydroxide/oxide hexagonal ring-graphene hybrids through chemical etching of metal hydroxide platelets by graphene oxide: energy storage applications.

    Science.gov (United States)

    Nethravathi, C; Rajamathi, Catherine R; Rajamathi, Michael; Wang, Xi; Gautam, Ujjal K; Golberg, Dmitri; Bando, Yoshio

    2014-03-25

    The reaction of β-Co(OH)2 hexagonal platelets with graphite oxide in an aqueous colloidal dispersion results in the formation of β-Co(OH)2 hexagonal rings anchored to graphene oxide layers. The interaction between the basic hydroxide layers and the acidic groups on graphene oxide induces chemical etching of the hexagonal platelets, forming β-Co(OH)2 hexagonal rings. On heating in air or N2, the hydroxide hybrid is morphotactically converted to porous Co3O4/CoO hexagonal ring-graphene hybrids. Porous NiCo2O4 hexagonal ring-graphene hybrid is also obtained through a similar process starting from β-Ni0.33Co0.67(OH)2 platelets. As electrode materials for supercapacitors or lithium-ion batteries, these materials exhibit a large capacity, high rate capability, and excellent cycling stability.

  18. Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

    Energy Technology Data Exchange (ETDEWEB)

    Georgobiani, V. A., E-mail: v.georgobiani@gmail.com; Gonchar, K. A.; Osminkina, L. A.; Timoshenko, V. Yu. [Lomonosov Moscow State University, Faculty of Physics (Russian Federation)

    2015-08-15

    Silicon-nanowire layers grown by the metal-assisted chemical etching of (100)-oriented p-type monocrystalline silicon substrates with a resistivity of 10 and 0.001 Ω · cm are studied by electron microscopy, Raman scattering, and photoluminescence measurements. It is established that nanowires grown on lightly doped substrates are structurally nonporous and formed as crystalline cores covered by nanocrystals 3–5 nm in dimensions. Nanowires grown on heavily doped substrates are structurally porous and contain both small nanocrystals and coarser crystallites with equilibrium charge carriers that influence interband radiative recombination. It is found that the photoluminescence intensity of nanowires in the spectral range 1.3–2.0 eV depends on the presence of molecular oxygen.

  19. Structural and XPS studies of PSi/TiO{sub 2} nanocomposites prepared by ALD and Ag-assisted chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Iatsunskyi, Igor, E-mail: yatsunskiy@gmail.com [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Kempiński, Mateusz [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 (Poland); Nowaczyk, Grzegorz; Jancelewicz, Mariusz [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Pavlenko, Mykola [Department of Experimental Physics, Odessa National I.I. Mechnikov University, 42, Pastera Str., 65023 Odessa (Ukraine); Załęski, Karol [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Jurga, Stefan [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska Str., 61-614 Poznan (Poland); Department of Macromolecular Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznan (Poland)

    2015-08-30

    Highlights: • Porous silicon/TiO{sub 2} nanocomposites have been investigated. • Morphology and chemical composition of PSi/TiO{sub 2} nanocomposites were established. • Valence-band XPS maximums for PSi/TiO{sub 2} nanocomposites were found and analyzed. - Abstract: PSi/TiO{sub 2} nanocomposites fabricated by atomic layer deposition (ALD) and metal-assisted chemical etching (MACE) were investigated. The morphology and phase structure of PSi/TiO{sub 2} nanocomposites were studied by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) with an energy dispersive X-ray spectroscopy (EDX) and Raman spectroscopy. The mean size of TiO{sub 2} nanocrystals was determined by TEM and Raman spectroscopy. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical elemental composition by observing the behavior of the Ti 2p, O 1s and Si 2p lines. TEM, Raman spectroscopy and XPS binding energy analysis confirmed the formation of TiO{sub 2} anatase phase inside the PSi matrix. The XPS valence band analysis was performed in order to investigate the modification of PSi/TiO{sub 2} nanocomposites electronic structure. Surface defects states of Ti{sup 3+} at PSi/TiO{sub 2} nanocomposites were identified by analyzing of XPS valence band spectra.

  20. Preparation of multifunctional Al-Mg alloy surface with hierarchical micro/nanostructures by selective chemical etching processes

    Science.gov (United States)

    Shi, Tian; Kong, Jianyi; Wang, Xingdong; Li, Xuewu

    2016-12-01

    A superamphiphobic aluminum magnesium alloy surface with enhanced anticorrosion behavior has been prepared in this work via a simple and low-cost method. By successively polishing, etching and boiling treatments, the multifunctional hierarchical binary structures composed of the labyrinth-like concave-convex microstructures and twisty nanoflakes have been prepared. Results indicate that a superhydrophobic contact angle of 160.5° and superoleophobic contact angle larger than 150° as well as low adhesive property to liquids are achieved after such structures being modified with fluoroalkyl-silane. Furthermore, the anticorrosion behaviors in seawater of as-prepared samples are characterized by electrochemical tests including the impedance spectroscopies, equivalent circuits fittings and polarization curves. It is found that the hierarchical micro/nanostructures accompanying with the modified coating are proved to possess the maximal coating coverage rate of 90.0% larger than microstructures of 85.9%, nanostructures of 83.8% and bare polished surface of 67.1% suggesting the optimal anticorrosion. Finally, a great potential application in concentrators for surface-enhanced Raman scattering (SERS) analysis of toxic and pollutive ions on the superamphiphobic surface is also confirmed. This work has wider significance in extending further applications of alloys in engineering and environmental detecting fields.

  1. Chemical dosing for sulfide control in Australia: An industry survey.

    Science.gov (United States)

    Ganigue, Ramon; Gutierrez, Oriol; Rootsey, Ray; Yuan, Zhiguo

    2011-12-01

    Controlling sulfide (H(2)S) production and emission in sewer systems is critical due to the corrosion and malodour problems that sulfide causes. Chemical dosing is one of the most commonly used measures to mitigate these problems. Many chemicals have been reported to be effective for sulfide control, but the extent of success varies between chemicals and is also dependent on how they are applied. This industry survey aims to summarise the current practice in Australia with the view to assist the water industry to further improve their practices and to identify new research questions. Results showed that dosing is mainly undertaken in pressure mains. Magnesium hydroxide, sodium hydroxide and nitrate are the most commonly used chemicals for sewers with low flows. In comparison, iron salts are preferentially used for sulfide control in large systems. The use of oxygen injection has declined dramatically in the past few years. Chemical dosing is mainly conducted at wet wells and pumping stations, except for oxygen, which is injected into the pipe. The dosing rates are normally linked to the control mechanisms of the chemicals and the dosing locations, with constant or profiled dosing rates usually applied. Finally, key opportunities for improvement are the use of mathematical models for the selection of chemicals and dosing locations, on-line dynamic control of the dosing rates and the development of more cost-effective chemicals for sulfide control.

  2. Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)Etching-Monitoring Using Quadrupole Mass Spectrometry

    Science.gov (United States)

    Takahashi, Satoshi; Horie, Tomoyuki; Shirayama, Yuya; Yokosuka, Shuntaro; Kashimura, Kenta; Hayashi, Akihiro; Iwase, Chikatsu; Shimbori, Shun'ichiro; Tokumoto, Hiroshi; Naitoh, Yasuhisa; Shimizu, Tetsuo

    Quadrupole mass spectrometry (QMS) has been applied to monitor the etching processes in a localized plasma etching system. An inward plasma was employed for etching in which the etching gas was discharged in the narrow gap between the etched sample and the entrance of an evacuating capillary tube. As the etching products are immediately evacuated through the capillary, a QMS system equipped at the capillary exit is able to analyze the products without any loss in concentration via diffusion into the chamber. Two kinds of samples, thermally grown SiO2 on Si and spin-coated polyimide film on Si, were etched, and the chemical species in the evacuated etching gas were analyzed with QMS, which enables monitoring of the composition of the surface being etched. Samples of thermal SiO2 were etched with CF4 plasma. The peak height of the SiF3+ signal during the SiO2 etching was lower than that observed during etching of the silicon substrate, leading to endpoint detection. The endpoint detection of the polyimide film etching was conducted using two etching gases: pure O2 and pure CF4. When O2 was used, the endpoint was detected by the decrease of the mass peak attributed to CO. When CF4 was employed, the plasma was able to etch both the polyimide film and Si substrate. Then the endpoint was detected by the increase of the mass peak of SiF3+ produced by the etching of the Si substrate.

  3. Biomechanical evaluation of laser-etched Ti implant surfaces vs. chemically modified SLA Ti implant surfaces: Removal torque and resonance frequency analysis in rabbit tibias.

    Science.gov (United States)

    Lee, Jung-Tae; Cho, Sung-Am

    2016-08-01

    To compare osseointegration and implant stability of two types of laser-etched (LE) Ti implants with a chemically-modified, sandblasted, large-grit and acid-etched (SLA) Ti implant (SLActive(®), Straumann, Basel, Switzerland), by evaluating removal torque and resonance frequency between the implant surface and rabbit tibia bones. We used conventional LE Ti implants (conventional LE implant, CSM implant, Daegu, Korea) and LE Ti implants that had been chemically activated with 0.9% NaCl solution (LE active implant) for comparison with SLActive(®) implants Two types of 3.3×8mm laser-etched Ti implants - conventional LE implants and LE active implants were prepared. LE implants and SLActive(®) implants were installed on the left and right tibias of 10 adult rabbits weighing approximately 3.0kg LE active implants and SLActive(®) implants were installed on the left and right tibias of 11 adult rabbits. After installation, we measured insertion torque (ITQ) and resonance frequency (ISQ). Three weeks (LE active) or 4 weeks (conventional LE) after installation, we measured removal torque (RTQ) and ISQ. In the conventional LE experiment, the mean ITQ was 16.99±6.35Ncm for conventional LE implants and 16.11±7.36Ncm for SLActive(®) implants (p=0.778>0.05). After 4 weeks, the mean of RTQ was 39.49±17.3Ncm for LE and 42.27±20.5Ncm for SLActive(®) (p=0.747>0.05). Right after insertion of the implants, the mean ISQ was 74.8±4.98 for conventional LE and 70.1±9.15 for SLActive(®) implants (p=0.169>0.05). After 4 weeks, the mean ISQ was 64.40±6.95 for LE and 67.70±9.83 for SLActive(®) (p=0.397>0.05). In the LE active experiment, the mean ITQ was 16.24±7.49Ncm for LE active implants and 14.33±5.06Ncm for SLActive(®) implants (p=0.491>0.05). After 3 weeks, the mean RTQ was 39.25±16.41Ncm for LE active and 41.56±10.41Ncm for SLActive(®) implants (p=0.698>0.05). Right after insertion of the implants, the mean ISQ was 58.64±10.51 for LE active implants and 53.82

  4. Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid

    Indian Academy of Sciences (India)

    A Mefoued; M Fathi; J Bhatt; A Messaoud; B Palahouane; N Benrekaa

    2011-12-01

    In this study, we have improved electrical characteristics such as the efficiency () and the fill factor (FF) of finished multicrystalline silicon (-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These -Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on -type -Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

  5. Study of morphological characteristic of por-Si formed using metal-assisted chemical etching by BET-method and fractal geometry

    Science.gov (United States)

    Boyko, Anton N.; Pyatilova, Olga V.; Kalmykov, Rustam M.; Gaev, Dahir S.; Timoshenkov, Sergei P.; Gavrilov, Sergei A.

    2016-12-01

    Study of new materials and composites based on porous silicon is of great interest for electronics and microelectronics industry. Functional characteristics of structured layers are closely associated with their morphology properties and treatment conditions correspondently. In this work a porous silicon layers formed by metal-assisted chemical etching (MACE) with the use of gas adsorption-desorption method, scanning electron microscopy (SEM) and fractal geometry have been examined. Specific surface area given by multi-point BET method was about of 7 m2/g and 13 m2/g for n-Si and p-Si specimens correspondently. Surface fractal dimension Ds was estimated for p-type mesoporous silicon from BET results using Neimark's thermodynamic approach, the value is Ds=2.86. "Slit islands" Mandelbrot's algorithm was applied for analysis of SEM images and calculations of surface fractal dimension Ds, computation gives Ds = 2.52 for n-Si sample and Ds = 2.84 for p-Si sample. The study testified the fractal nature of porous layers formed by MACE and exhibits correlation between different methods of fractal dimension estimation. The results can be applied for improvement of methods of structured solids characterization.

  6. Controlled Synthesis of Si Nanowire Arrays through Metal Assisted Silicon Chemical Etching%金属援助硅化学刻蚀法可控制备硅纳米线阵列

    Institute of Scientific and Technical Information of China (English)

    吕文辉; 张帅

    2011-01-01

    A reasonable method is developed for synthesis of Si nanowire(SiNW) arrays with controlled morphology on the basis of the mechanism of metal-assisted silicon chemical etching. In this method, SiNW arrays have been synthesized by metal (a discontiguous Ag thin film) assisted silicon chemical etching and the morphology of the arrays is controlled by the structure of discontiguous Ag thin film and Si chemical etching time. Detailed scanning electron microscopy(SEM) observations demonstrate that the array density depends on morphology of the Ag thin film and the array height depends on the etching time. The investigation results provid a simple and efficient way to controllable preparation of silicon nanowire arrays for various nano-electron devices, such as silicon nanowire solar cells.%基于金属援助硅化学刻蚀机理,成功地发展了一种形貌可控地制备硅纳米线阵列的有效方法.在该方法中,通过银纳米颗粒催化层的微结构和硅化学刻蚀的时间来调控硅纳米线阵列的形貌.扫描电子显微镜(SEM)形貌表征的实验结果证实:硅纳米线阵列的孔隙率依赖银纳米颗粒催化层的微结构,硅纳米线阵列的高度依赖于硅的刻蚀时间.这种形貌可控地制备单晶硅纳米线阵列的方法简单、有效,可用于构筑硅纳米线光伏电池等各种硅基纳米电子器件.

  7. Graphene nanoribbons: Relevance of etching process

    Energy Technology Data Exchange (ETDEWEB)

    Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, Zurich 8093 (Switzerland)

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  8. A survey of respirators usage for airborne chemicals in Korea.

    Science.gov (United States)

    Han, Don-Hee; Kang, Min-Sun

    2009-10-01

    A questionnaire survey was undertaken to identify the current status of respirator usage in manufacturing work environments subject to gas/vapor chemicals exposure in Korea and to suggest improvements to enhance the effectiveness of respirator usage. The number of target companies included 17 big companies, 110 small & mid-size companies, and 5 foreign companies, and the number of respondents included 601 workers and 69 persons in charge of respirators (PCR). The results explained clearly that respirator programs in practice were extremely poor in small & mid-sized companies. The findings indicated that the selection of respirators was not appropriate. Quarter mask including filtering facepiece was the most common facepiece form for respirator and was worn by sixty-four percent. Not a little proportion of respondents (33%) complained about the fit: faceseal leakage between the face and facepiece. A filtering facepiece with carbon fiber filter was used as a substitution for a gas/vapor respirator. Another result was that the PCR respondents' perception of the administration of respirators was very low. The results of this survey suggest that regal enforcement of respiratory protection programs should be established in Korea. On the basis of these findings, respiratory protection programs should include respirator selection, maintenance, training, and fit testing.

  9. Pharmaceutical and chemical pediatric poisoning in Kuwait: a retrospective survey

    Directory of Open Access Journals (Sweden)

    Abahussain EA

    2010-03-01

    Full Text Available Past studies of pediatric poisoning in Kuwait have suggested differences at hospital level which could impact on the implementation of public health interventions. The objective was to compare pediatric poisoning admissions at general hospitals in Kuwait. Methods: Retrospective survey of all pediatric poisoning cases at the six general hospitals from January 2004 to December 2005. Case data were documented using ICD-10 criteria and the poisoning severity score. Aggregated data was also obtained from five private hospitals.Results: 978 children were admitted in public hospitals over 2004 and 2005 (no fatalities being 1.8% and 1.6% of all pediatric admissions (private hospitals admitted 293 cases. The majority of the poisoning cases came from Jahra hospital (>35%, the median age was 2.3 yrs, 93% of cases were under 6 yrs old and 71% were Kuwaiti. Two thirds of cases involved pharmaceuticals although this varied between hospitals with a tendency for more severe cases with chemical poisoning (p=0.011. Kerosene was an important problem at Jahra hospital (34.7% of chemical exposures. Non-opioid analgesics constituted 22.3% of medication exposures with hormones and drugs affecting the autonomic nervous system also common with some difference in pattern between institutions.Conclusion: Case demographics do not vary significantly between the hospitals but there are differences in the nature of toxic agents to which children are exposed suggesting that preventive and educational programs could be targeted to specific areas for maximal effect particularly with regard to household chemical and kerosene exposures.

  10. Surface engineering of SiC via sublimation etching

    Science.gov (United States)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  11. Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw

    2015-06-15

    In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H{sub 3}PO{sub 4}, HCl, and HNO{sub 3} are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO{sub 3} exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10{sup −4} Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H{sub 3}PO{sub 4}, HCl and HNO{sub 3} were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm{sup 2} and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO{sub 3}-etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%.

  12. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  13. Modification of etching patterns in bovine dental enamel.

    Science.gov (United States)

    Lees, S; Trombly, P L; Skobe, Z; Gariepy, E E; Trull, A F

    1979-08-01

    It is presumed that the etching pattern is controlled by the residual organic content of dental enamel. Pretreatment with 1.ON NaOH sould remove the organic material and modify the etching pattern. SEM studies and other tests for physical and chemical properties show that the predicted modification of the etching pattern, when the tooth surface is pretreated with NaOH solution, occurs apparently without other changes or properties.

  14. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  15. White spot lesions: Does etching really matter?

    Science.gov (United States)

    Abufarwa, Moufida; Voorhees, Robert D; Varanasi, Venu G; Campbell, Phillip M; Buschang, Peter H

    2017-08-01

    The clinical significance of acid etching prior to orthodontic bonding is controversial. In the present study, we evaluated the effect of 15 seconds of acid etching on enamel demineralization. Twenty-seven human molars were sectioned and assigned to two groups. Under standardized conditions, the enamel surfaces were imaged using FluoreCam to obtain baseline data. Group 1 was etched using 37% phosphoric acid for 15 seconds, rinsed with water, and then imaged again; group 2 was only rinsed with water. Water rinse was collected for calcium chemical analysis using inductively-coupled plasma auger electron spectrometry. Both groups were subjected to 9 days of pH cycling, after which final FluoreCam images were obtained. Group 1 showed a significant increase in lesion area (P=.012), decrease in light intensity (P=.009), and decrease in impact (P=.007) after acid etching. The amount of calcium that leached out over the 15 seconds was 14 ppm ±2.4 (0.35 mmol/L±0.06). Following pH cycling, there was no statistically-significant between-group difference in overall enamel demineralization. Initial demineralization caused by 15 seconds of acid etching does not increase enamel susceptibility to further demineralization. This suggests that acid etching does not increase the risk of developing white spot lesions during orthodontics. © 2017 John Wiley & Sons Australia, Ltd.

  16. TrackEtching - A Java based code for etched track profile calculations in SSNTDs

    Science.gov (United States)

    Muraleedhara Varier, K.; Sankar, V.; Gangadathan, M. P.

    2017-09-01

    A java code incorporating a user friendly GUI has been developed to calculate the parameters of chemically etched track profiles of ion-irradiated solid state nuclear track detectors. Huygen's construction of wavefronts based on secondary wavelets has been used to numerically calculate the etched track profile as a function of the etching time. Provision for normal incidence and oblique incidence on the detector surface has been incorporated. Results in typical cases are presented and compared with experimental data. Different expressions for the variation of track etch rate as a function of the ion energy have been utilized. The best set of values of the parameters in the expressions can be obtained by comparing with available experimental data. Critical angle for track development can also be calculated using the present code.

  17. Survey of Alternative Feedstocks for Commodity Chemical Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    McFarlane, Joanna [ORNL; Robinson, Sharon M [ORNL

    2008-02-01

    The current high prices for petroleum and natural gas have spurred the chemical industry to examine alternative feedstocks for the production of commodity chemicals. High feedstock prices have driven methanol and ammonia production offshore. The U.S. Chemical Industry is the largest user of natural gas in the country. Over the last 30 years, alternatives to conventional petroleum and natural gas feedstocks have been developed, but have limited, if any, commercial implementation in the United States. Alternative feedstocks under consideration include coal from unconventional processing technologies, such as gasification and liquefaction, novel resources such as biomass, stranded natural gas from unconventional reserves, and heavy oil from tar sands or oil shale. These feedstock sources have been evaluated with respect to the feasibility and readiness for production of the highest volume commodity chemicals in the United States. Sources of organic compounds, such as ethanol from sugar fermentation and bitumen-derived heavy crude are now being primarily exploited for fuels, rather than for chemical feedstocks. Overall, government-sponsored research into the use of alternatives to petroleum feedstocks focuses on use for power and transportation fuels rather than for chemical feedstocks. Research is needed to reduce cost and technical risk. Use of alternative feedstocks is more common outside the United States R&D efforts are needed to make these processes more efficient and less risky before becoming more common domestically. The status of alternative feedstock technology is summarized.

  18. The influence on the performanceof hybrid tantalum capacitor by chemical etching on Tantalum foil%钽箔表面化学腐蚀对混合钽电容器性能的影响

    Institute of Scientific and Technical Information of China (English)

    冯庆; 贾波

    2016-01-01

    The Tantalum foil was etched by chemical method which was used to prepare the cathode of capacitor with RuO2·nH2O.The hybrid tantalum capacitor was assembled with the cathode prepared and an tantalum anode with 8000μF nominal capacity. The test results indicate that compared to the capacitor with no chemical etching treatment, the capacity increased from 7533.2μF to 7895.6μF, the losses tangent decrease from 54% to 41%, and the equivalent series resistance reduced from 85mΩ to 70mΩ.%通过化学腐蚀的方法,对混合钽电容器阴极用基体钽箔进行处理,将腐蚀后的钽箔与RuO2·nH2O活性物质使用粘结剂法制备成电容器阴极,与标称电容量为8000μF的钽阳极组装成电容器并进行性能检测,测试表明,与未进行化学腐蚀处理的钽箔制备的钽电容器相比,电容器的电容量从7533.2μF提高到了7895.6μF,损耗角正切值(tgδ)从54%降低到41%,等效串联电阻(ESR)从85mΩ降低到70mΩ,漏电流从76μA降低到了46μA,电容器的电性能得到了改善。

  19. Chemical rocket propulsion a comprehensive survey of energetic materials

    CERN Document Server

    Shimada, Toru; Sinditskii, Valery; Calabro, Max

    2017-01-01

    Developed and expanded from the work presented at the New Energetic Materials and Propulsion Techniques for Space Exploration workshop in June 2014, this book contains new scientific results, up-to-date reviews, and inspiring perspectives in a number of areas related to the energetic aspects of chemical rocket propulsion. This collection covers the entire life of energetic materials from their conceptual formulation to practical manufacturing; it includes coverage of theoretical and experimental ballistics, performance properties, as well as laboratory-scale and full system-scale, handling, hazards, environment, ageing, and disposal. Chemical Rocket Propulsion is a unique work, where a selection of accomplished experts from the pioneering era of space propulsion and current technologists from the most advanced international laboratories discuss the future of chemical rocket propulsion for access to, and exploration of, space. It will be of interest to both postgraduate and final-year undergraduate students in...

  20. Review of micromachining of ceramics by etching

    Institute of Scientific and Technical Information of China (English)

    H.T.TING; K.A.ABOU-EL-HOSSEIN; H.B.CHUA

    2009-01-01

    In the last two decades, there has been an enormous surge in interest in ceramic materials and, as a result, there have been significant advances in their development and applications. Their inherent properties, such as capability of operating at temperatures far above metals, high level of hardness and toughness, low coefficient of thermal expansion and high thermal conductivity rendered ceramics to be one of the leading engineering materials. Many research works have been conducted in the past few years on machining of advanced ceramics using different processing methods in order to obtain a better surface roughness, higher material removal rate and improved tool life. Micromachining using chemical etching is one of those methods that do not involve the problem of tool life and direct tool-work piece contact. However, only a few research works have been done on micromachining of ceramics using chemical etching. Hence, study of chemical machining of advanced ceramics is still needed as the process has found wide application in the industry because of its relative low operating costs. In this work, we summarize the recent progresses in machining of different types of advanced ceramics, material processing methods such as wet etching and dry etching, and finally the prospects for control of material removal rate and surface quality in the process of ceramic micromachining.

  1. Synthesis, growth, structural, spectral, thermal, chemical etching, linear and nonlinear optical and mechanical studies of an organic single crystal 4-chloro 4-nitrostilbene (CONS): a potential NLO material.

    Science.gov (United States)

    Dinakaran, Paul M; Kalainathan, S

    2013-07-01

    4-Chloro 4-nitrostilbene (CONS) a new organic nonlinear optical material has been synthesized. Employing slow evaporation method, good optical quality single crystals (dimensions up to 6×2×3 mm(3)) have been grown using ethyl methyl ketone (EMK) as a solvent. The grown crystals have been subjected to various characterizations such as single crystal X-ray diffraction, powder XRD, Fourier Transform Infrared spectroscopy (FTIR), proton NMR, solid UV absorption, SHG studies. Single crystal X-ray diffraction reveals that the crystal system belongs to monoclinic with noncentrosymmetric space group P21. The UV-Vis absorption spectrum has been recorded and found that the cut off wavelength is 380 nm. Functional groups and the structure of the title compound have been confirmed by FTIR and (1)H NMR spectroscopic analyses respectively. Molecular mass of the CONS confirmed by the high resolution mass spectral analysis .The thermal behavior of the grown crystal has been studied by TG/DTA analysis and it shows the melting point is at 188.66 °C. Dislocations and growth pattern present in the grown crystal revealed by the etching study. The mechanical strength of the CONS crystal has been studied by Vicker's hardness measurement. The SHG efficiency of the grown crystal has been determined by Kurtz and Perry powder test which revealed that the CONS crystal (327 mV) has 15 times greater efficiency than that of KDP (21.7 mV).

  2. Synthesis, growth, structural, spectral, thermal, chemical etching, linear and nonlinear optical and mechanical studies of an organic single crystal 4-chloro 4-nitrostilbene (CONS): A potential NLO material

    Science.gov (United States)

    Dinakaran, Paul M.; Kalainathan, S.

    2013-07-01

    4-Chloro 4-nitrostilbene (CONS) a new organic nonlinear optical material has been synthesized. Employing slow evaporation method, good optical quality single crystals (dimensions up to 6 × 2 × 3 mm3) have been grown using ethyl methyl ketone (EMK) as a solvent. The grown crystals have been subjected to various characterizations such as single crystal X-ray diffraction, powder XRD, Fourier Transform Infrared spectroscopy (FTIR), proton NMR, solid UV absorption, SHG studies. Single crystal X-ray diffraction reveals that the crystal system belongs to monoclinic with noncentrosymmetric space group P21. The UV-Vis absorption spectrum has been recorded and found that the cut off wavelength is 380 nm. Functional groups and the structure of the title compound have been confirmed by FTIR and 1H NMR spectroscopic analyses respectively. Molecular mass of the CONS confirmed by the high resolution mass spectral analysis .The thermal behavior of the grown crystal has been studied by TG/DTA analysis and it shows the melting point is at 188.66 °C. Dislocations and growth pattern present in the grown crystal revealed by the etching study. The mechanical strength of the CONS crystal has been studied by Vicker's hardness measurement. The SHG efficiency of the grown crystal has been determined by Kurtz and Perry powder test which revealed that the CONS crystal (327 mV) has 15 times greater efficiency than that of KDP (21.7 mV).

  3. Communicating serum chemical concentrations to study participants: follow up survey

    Directory of Open Access Journals (Sweden)

    Louis Germaine M

    2010-05-01

    Full Text Available Abstract Background A considerable literature now supports the importance of effective communication with study participants, including how best to develop communication plans focusing on the uncertainty of health risks associated with particular environmental exposures. Strategies for communicating individual concentrations of environmental chemicals in human biological samples in the absence of clearly established safe or hazardous levels have been discussed from a conceptual basis and to a lesser extent from an empirical basis. We designed and evaluated an empirically based communication strategy for women of reproductive age who previously participated in a prospective study focusing on persistent environmental chemicals and reproductive outcomes. Methods A cohort of women followed from preconception through pregnancy or up to 12 menstrual cycles without pregnancy was given their individual serum concentrations for lead, dichloro-2,2-bisp-chlorophenyl ethylene, and select polychlorinated biphenyl congeners. Two versions of standardized letters were prepared depending upon women's exposure status, which was characterized as low or high. Letters included an introduction, individual concentrations, population reference values and guidance for minimizing future exposures. Participants were actively monitored for any questions or concerns following receipt of letters. Results Ninety-eight women were sent letters informing them of their individual concentrations to select study chemicals. None of the 89 (91% participating women irrespective of exposure status contacted the research team with questions or concerns about communicated exposures despite an invitation to do so. Conclusions Our findings suggest that study participants can be informed about their individual serum concentrations without generating unnecessary concern.

  4. A Survey of Chemical Separation in Accreting Neutron Stars

    Science.gov (United States)

    Mckinven, Ryan; Cumming, Andrew; Medin, Zach; Schatz, Hendrik

    2016-06-01

    The heavy element ashes of rp-process hydrogen and helium burning in accreting neutron stars are compressed to high density where they freeze, forming the outer crust of the star. We calculate the chemical separation on freezing for a number of different nuclear mixtures resulting from a range of burning conditions for the rp-process. We confirm the generic result that light nuclei are preferentially retained in the liquid and heavy nuclei in the solid. This is in agreement with the previous study of a 17-component mixture of rp-process ashes by Horowitz et al., but extends that result to a much larger range of compositions. We also find an alternative phase separation regime for the lightest ash mixtures which does not demonstrate this generic behavior. With a few exceptions, we find that chemical separation reduces the expected {Q}{{imp}} in the outer crust compared to the initial rp-process ash, where {Q}{{imp}} measures the mean-square dispersion in atomic number Z of the nuclei in the mixture. We find that the fractional spread of Z plays a role in setting the amount of chemical separation and is strongly correlated to the divergence between the two/three-component approximations and the full component model. The contrast in Y e between the initial rp-process ashes and the equilibrium liquid composition is similar to that assumed in earlier two-component models of compositionally driven convection, except for very light compositions which produce nearly negligible convective driving. We discuss the implications of these results for observations of accreting neutron stars.

  5. A Survey of Chemical Separation in Accreting Neutron Stars

    CERN Document Server

    Mckinven, Ryan; Medin, Zach; Schatz, Hendrik

    2016-01-01

    The heavy element ashes of rp-process hydrogen and helium burning in accreting neutron stars are compressed to high density where they freeze, forming the outer crust of the star. We calculate the chemical separation on freezing for a number of different nuclear mixtures resulting from a range of burning conditions for the rp-process. We confirm the generic result that light nuclei are preferentially retained in the liquid and heavy nuclei in the solid. This is in agreement with the previous study of a 17-component mixture of rp-process ashes by Horowitz et al. (2007), but extends that result to a much larger range of compositions. We also find an alternate phase separation regime for the lightest ash mixtures which does not demonstrate this generic behaviour. With a few exceptions, we find that chemical separation reduces the expected $Q_{\\rm imp}$ in the outer crust compared to the initial rp-process ash, where $Q_{\\rm imp}$ measures the mean-square dispersion in atomic number $Z$ of the nuclei in the mixtu...

  6. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  7. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  8. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  9. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1987-03-10

    A method is described of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap E/sub g1/ in the presence of a second semiconductor material of a different composition and direct bandgap E/sub g2/, wherein E/sub g2/>E/sub g1/. The second semiconductor material is not substantially etched during the method, comprising subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons are not present, the photons being of an energy greater than E/sub g1/ but less than E/sub g2/, whereby the first semiconductor material is photochemically etched and the second material is substantially not etched.

  10. Survey on the Use of LCA in European Chemical Industry

    DEFF Research Database (Denmark)

    Olsen, Stig Irving

    1999-01-01

    During 1997 a questionnaire was sent to 40 European chemical manufacturers representing different positions in the supply chain. 25 companies (62.5%) responded, of which 23 had been involved in LCA to some degree. The questionnaire consisted of 30 questions divided into four parts dealing...... industry has taken up the LCA methodology and is testing its applicability for their purposes, although they still feel the methodology is a bit immature. The resources devoted to LCA depends to a great extent on the company's position in the supply chain and on the size of the company. Many of the LCA......'s has been undertaken to comply with customers' requirements for LCA data, but also process development and marketing were important purposes of the work. Interestingly, in about 40% of the companies the LCA's actually revealed results that would not have been anticipated without doing the LCA...

  11. Anisotropy of synthetic diamond in catalytic etching using iron powder

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junsha [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan); Wan, Long, E-mail: wanlong1799@163.com [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Chen, Jing [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Yan, Jiwang [Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan)

    2015-08-15

    Highlights: • Synthetic diamond crystallites were etched using iron without requiring hydrogen. • The effect of temperature on the etching behaviour was demonstrated. • The anisotropy of etching on different crystal planes was investigated. • The extent of etching on diamond surface was examined quantitatively. • A schematic model for diamond etching by iron is being proposed. - Abstract: This paper demonstrated a novel technique for catalytic etching of synthetic diamond crystallites using iron (Fe) powder without flowing gas. The effect of temperature on the etching behaviour on different crystal planes of diamond was investigated. The surface morphology and surface roughness of the processed diamond were examined by scanning electron microscope (SEM) and laser-probe surface profiling. In addition, the material composition of the Fe-treated diamond was characterized using micro-Raman spectroscopy and the distribution of chemical elements and structural changes on Fe-loaded diamond surfaces were analyzed by energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD), respectively. Results showed that at the same temperature the {1 0 0} plane was etched faster than the {1 1 1} plane, and that the etching rate of both {1 0 0} and {1 1 1} plane increased with temperature. The etch pits on {1 0 0} plane were reversed pyramid with flat {1 1 1} walls, while the etch holes on {1 1 1} plane were characterized with flat bottom. It was also demonstrated that graphitization of diamond and subsequent carbon diffusion in molten iron were two main factors resulting in the removal of carbon from the diamond surface.

  12. Microstructure, composition, and etching topography of dental ceramics.

    Science.gov (United States)

    Della Bona, Alvaro; Anusavice, Kenneth J

    2002-01-01

    Topographic analysis of etched ceramics provides qualitative surface structure information that affects micromechanical retention mechanisms. This study tested the hypothesis that the etching mechanism changes according to the type of etchant and the ceramic microstructure and composition. Quantitative and qualitative analyses of 15 dental ceramics were performed using scanning electron microscopy, back-scattered imaging, X-ray diffraction, optical profilometry, and wavelength dispersive spectroscopy based on Phi-Rho-Z correction. All ceramic specimens were polished to 1 micron with diamond compound, and the following etchants and etching times were used: ammonium bifluoride (ABF) for 1 minute, 9.6% hydrofluoric acid (HF) for 2 minutes, and 4% acidulated phosphate fluoride (APF) for 2 minutes. HF produced an irregular etching pattern in which pores were the characteristic topographic feature. ABF-etched ceramic surfaces showed mostly grooves, and APF etchant caused a buildup of surface precipitate. Core ceramics showed less topographic change after etching because of their high alumina content and low chemical reactivity. The observations suggest that the etching mechanism is different for the three etchants, with HF producing the most prominent etching pattern on all dental ceramics examined.

  13. Survey of groundwater chemical pollution in the Borazjan plain

    Directory of Open Access Journals (Sweden)

    Jaber Mozafarizadeh

    2014-11-01

    Full Text Available Background: Nitrate due to its high water solubility, poor absorption and having stable composition in the water, has been studied as the best index to indicate groundwater contamination. Borazjan, located in the north of Bushehr province, is one of fertile plains which nitrate contamination of groundwater has occurred in the most parts of it. Detecting the source of pollution and the most vulnerable areas were the aims of this study. Material and Methods: In this study, hydrochemical quality, especially in terms of nitrate, sulfate, chloride sodium, spatial and temporal variations and the origin of them in the groundwater of Borazjan plain, are studied. Groundwater samples from 12 wells were collected in April and August 2012 and assessed to determine the parameters of hydrochemistry and pollution. Results: Based on these results, severe nitrate contamination of groundwater, especially in the southern part of the plain, by agricultural activities, cesspool wells, domestic sewage and livestock and poultry wastewater the influence of the effluent from the aviculture, were occurred. Also, the quality of groundwater resources showed that concentration of Cl- , Na+, SO42- , and NO3- are more than standard limit and only in some areas of plain, concentration of ions such as NO3- and Na+ is less than the standard limit. Conclusion: According to the results of this study, using chemical fertilizers in terms of time period and amount of consumption should be properly managed. Furthermore, domestic wastewater, livestock and poultry wastewater should be controlled and the monitoring system for measuring the exact quantity and quality of groundwater resources must be completed.

  14. Parametric study on the solderability of etched PWB copper

    Energy Technology Data Exchange (ETDEWEB)

    Hosking, F.M.; Stevenson, J.O.; Hernandez, C.L.

    1996-10-01

    The rapid advancement of interconnect technology has resulted in a more engineered approach to designing and fabricating printed wiring board (PWB) surface features. Recent research at Sandia National Laboratories has demonstrated the importance of surface roughness on solder flow. This paper describes how chemical etching was used to enhance the solderability of surfaces that were normally difficult to wet. The effects of circuit geometry, etch concentration, and etching time on solder flow are discussed. Surface roughness and solder flow data are presented. The results clearly demonstrate the importance of surface roughness on the solderability of fine PWB surface mount features.

  15. Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

    DEFF Research Database (Denmark)

    Andersen, Bo Asp Møller; Hansen, Ole; Kristensen, Martin

    1997-01-01

    The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber. It was ......The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber....... It was found that, for a constant load of silicon exposed to the plasma, the etch rate variation can be controlled through the applied rf power, the chamber pressure, and the gas mixture. It was also found that the etch rate uniformity varies with the load of silicon exposed to the plasma. The result...... is a balance between the flux of neutral radicals and the flux of energetic ions to the surface. This balance is due to the RIE etch mechanism, which involves synergism between the two fluxes. (C) 1997 American Vacuum Society....

  16. Low-temperature and damage-free transition metal and magnetic material etching using a new metallic complex reaction

    Science.gov (United States)

    Nozawa, Toshihisa; Miyama, Ryo; Kubota, Shinji; Moyama, Kazuki; Kubota, Tomihiro; Samukawa, Seiji

    2015-03-01

    A neutral beam etching process has been developed that achieves damage- free (chemically and physically) etching. Recently, it was found that transition metals could be etched using neutral beam etching through metallic complex reactions. In this process, a neutral beam is extracted from a plasma generation region into a reaction chamber. Complex reactant gases are injected into a reaction chamber which is screened from the plasma during neutral beam etching. In this paper, etching of Pt and CoFeB, candidate materials for MRAM structures by a neutral beam system is described. It was found that etch rate enhancement of Pt/CoFeB surfaces resulted from their exposure to a neutral beam from Ar/O2 plasma with simultaneous injection of EtOH /acetic acid into the reaction chamber. Etching damage was also evaluated and no magnetic hysteresis degradation has been observed. Neutral beam etching technology has the capability to make breakthrough for fabricating MRAM device.

  17. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes with chemically assisted ion beam etched facets

    Science.gov (United States)

    Becerra, Daniel L.; Kuritzky, Leah Y.; Nedy, Joseph; Saud Abbas, Arwa; Pourhashemi, Arash; Farrell, Robert M.; Cohen, Daniel A.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

    2016-02-01

    Continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.

  18. The Open Cluster Chemical Abundances and Mapping (OCCAM) Survey: Optical Extension for Neutron Capture Elements

    Science.gov (United States)

    Melendez, Matthew; O'Connell, Julia; Frinchaboy, Peter M.; Donor, John; Cunha, Katia M. L.; Shetrone, Matthew D.; Majewski, Steven R.; Zasowski, Gail; Pinsonneault, Marc H.; Roman-Lopes, Alexandre; Stassun, Keivan G.; APOGEE Team

    2017-01-01

    The Open Cluster Chemical Abundance & Mapping (OCCAM) survey is a systematic survey of Galactic open clusters using data primarily from the SDSS-III/APOGEE-1 survey. However, neutron capture elements are very limited in the IR region covered by APOGEE. In an effort to fully study detailed Galactic chemical evolution, we are conducting a high resolution (R~60,000) spectroscopic abundance analysis of neutron capture elements for OCCAM clusters in the optical regime to complement the APOGEE results. As part of this effort, we present Ba II, La II, Ce II and Eu II results for a few open clusters without previous abundance measurements using data obtained at McDonald Observatory with the 2.1m Otto Struve telescope and Sandiford Echelle Spectrograph.This work is supported by an NSF AAG grant AST-1311835.

  19. Freeze fracture and freeze etching.

    Science.gov (United States)

    Chandler, Douglas E; Sharp, William P

    2014-01-01

    Freeze fracture depends on the property of frozen tissues or cells, when cracked open, to split along the hydrophobic interior of membranes, thus revealing broad panoramas of membrane interior. These large panoramas reveal the three-dimensional contours of membranes making the methods well suited to studying changes in membrane architecture. Freshly split membrane faces are visualized by platinum or tungsten shadowing and carbon backing to form a replica that is then cleaned of tissue and imaged by TEM. Etching, i.e., removal of ice from the frozen fractured specimen by sublimation prior to shadowing, can also reveal the true surfaces of the membrane as well as the extracellular matrix and cytoskeletal networks that contact the membranes. Since the resolution of detail in the metal replicas formed is 1-2 nm, these methods can also be used to visualize macromolecules or macromolecular assemblies either in situ or displayed on a mica surface. These methods are available for either specimens that have been chemically fixed or specimens that have been rapidly frozen without chemical intervention.

  20. Block copolymer templated etching on silicon.

    Science.gov (United States)

    Qiao, Yinghong; Wang, Dong; Buriak, Jillian M

    2007-02-01

    The use of self-assembled polymer structures to direct the formation of mesoscopic (1-100 nm) features on silicon could provide a fabrication-compatible means to produce nanoscale patterns, supplementing conventional lithographic techniques. Here we demonstrate nanoscale etching of silicon, applying standard aqueous-based fluoride etchants, to produce three-dimensional nanoscale features with controllable shapes, sizes, average spacing, and chemical functionalization. The block copolymers serve to direct the silicon surface chemistry by controlling the spatial location of the reaction as well as concentration of reagents. The interiors of the resulting etched nanoscale features may be selectively functionalized with organic monolayers, metal nanoparticles, and other materials, leading to a range of ordered arrays on silicon.

  1. Cryogenic rf test of the first plasma etched SRF cavity

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Im, D; Phillips, L; Vušković, L

    2016-01-01

    Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity is then plasma processed. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  2. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Su Min; Garay, Adrian Adalberto; Lee, Wan In; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH{sub 3}OH/Ar gas mixture. As the CH{sub 3}OH concentration in CH{sub 3}OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH{sub 3}OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO{sub 2} and RuO{sub 3} compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH{sub 3}OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO{sub 2} and RuO{sub 3} can be easily sputtered off.

  3. A Survey of Commercially Available Chemical Agent Instrumentation for Use in the Field

    Energy Technology Data Exchange (ETDEWEB)

    Haas, J S; Alcaraz, A; Andresen, B D; Pruneda, C O

    2002-03-01

    Lawrence Livermore National Laboratory's (LLNL) Forensic Science Center (FSC) has extensive experience and capabilities in the analysis of chemical agents (CA) and related compounds as well as experience in identifying these materials in the field (i.e. samples such as those found in soils, liquids, gases). An open source survey was performed to determine viable, commercially available technology that can detect, in situ, CA and also meet field-use performance criteria as specified by the Program Management Consultant (PMC). The performance requirements of the technology include accuracy, reliability, integration onto robotics, and chemical detection sensitivities that meet required specifications. Not included in this survey are technologies and methodologies to detect CA decomposition products and related waste streams.

  4. Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3

    Science.gov (United States)

    Zhang, Liheng; Verma, Amit; (Grace Xing, Huili; Jena, Debdeep

    2017-03-01

    Dry etching behavior of unintentionally-doped (\\bar{2}01) β-Ga2O3 has been studied in a BCl3/Ar chemistry using inductively-coupled-plasma reactive ion etching (ICP-RIE). The effects of various etch parameters like ICP and RIE powers, BCl3/Ar gas ratio and chamber pressure on etch rate are studied systematically. Higher ICP, RIE powers and lower pressure conditions are found to enhance the etch rate. A synergic etching mechanism between chemical and physical components is proposed and used to obtain fast Ga2O3 etch rates more than 160 nm/min, nearly-vertical sidewalls and smooth etched surfaces. The findings of this work will enable Ga2O3 vertical devices for power electronics.

  5. Crystallographic orientation dependent etching of graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Nemes-Incze, Peter; Biro, Laszlo Peter [Research Institute for Technical Physics and Materials Science, PO. Box 49, 1525 Budapest (Hungary); Magda, Gabor [Budapest University of Technology and Economics (BME), PO Box 91, 1521 Budapest (Hungary); Kamaras, Katalin [Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, 1525, Budapest (Hungary)

    2010-04-15

    Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO{sub 2} support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples. This etching technique opens up new possibilities in graphene patterning and modification. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Kamlendra Awasthi; Vaibhav Kulshreshtha; B Tripathi; N K Acharya; M Singh; Y K Vijay

    2006-06-01

    Polymer blends of polycarbonate (PC) and polysulphone (PSF) having thickness, 27 m, are prepared by solution cast method. The transport properties of pores in a blend membrane are examined. The pores were produced in this membrane by a track etching technique. For this purpose, a thin polymer membrane was penetrated by a single heavy ion of Ni7+ of 100 MeV, followed by preferential chemical etching of the ion track. Ion permeation measurements show that pores in polymeric membrane are charged or neutralized, which depends upon the variation in concentration of the solvent. The – curve at concentration, N/10, shows that the pores are negatively charged, whereas at concentration, N/20, the linear nature of – curve indicates that the pores approach towards neutralized state and on further concentration, N/40, the pores become fully neutralized, consequently the rectifier behaviour of pores has been omitted. The gas permeability of hydrogen and carbon dioxide of this membrane was measured with increasing etching time. The permeability was measured from both the sides. Permeability at the front was larger than the permeability at the back which shows asymmetric behaviour of membranes.

  7. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas.

    Science.gov (United States)

    Li, Yang; Wang, Cong; Yao, Zhao; Kim, Hong-Ki; Kim, Nam-Young

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology.

  8. Preliminary results of the radiological survey at the former Dow Chemical Company site, Madison, Illinois

    Energy Technology Data Exchange (ETDEWEB)

    Cottrell, W.D.; Williams, J.K.

    1990-12-01

    During the late 1950s and early 1960s, the former Dow Chemical Company plant, now owned and operated by Spectrulite Consortium Inc., supplied materials and provided services for the Atomic Energy Commission (AEC) under purchase orders issued by the Mallinckrodt Chemical Company, a primary AEC contractor. Information indicates that research and development work involving gamma-phase extrusion of uranium metal was conducted at the Dow Chemical plant. Because documentation establishing the current radiological condition of the property was unavailable, a radiological survey was conducted by members of the Measurement Applications and Development Group of the Oak Ridge National Laboratory in March 1989. The survey included: measurement of indoor gamma exposure rates; collection and radionuclide analysis of dust and debris samples; and measurements to determine alpha and beta-gamma surface contamination. The results of the survey demonstrate that Building 6, the area uranium extrusion and rod-straightening work occurred, is generally free of radioactive residuals originating from former DOE-sponsored activities. However, {sup 238}U- and {sup 232}Th-contaminated dust was found on overhead beams at the south end of Building 6. These findings suggest that past DOE-supported operations were responsible for uranium-contaminated beam dust in excess of guidelines in Building 6. However, the contamination is localized and limited in extent, rendering it highly unlikely that under present use an individual working in or frequenting these remote areas would receive a significant radiation exposure. We recommend that additional scoping survey measurements and sampling be performed to further define the extent of indoor uranium contamination southward to include Building 4 and northward throughout Building 6. 5 refs., 11 figs., 4 tabs.

  9. Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

    Science.gov (United States)

    Miura, Yutaka; Kasahara, Yu; Habuka, Hitoshi; Takechi, Naoto; Fukae, Katsuya

    2009-02-01

    The etching rate behavior of silicon dioxide (SiO2, fused silica) using chlorine trifluoride (ClF3) gas is studied at substrate temperatures between 573 and 1273 K at atmospheric pressure in a horizontal cold-wall reactor. The etching rate increases with the ClF3 gas concentration, and the overall reaction is recognized to be of the first order. The change of the etching rate with increasing substrate temperature is nonlinear, and the etching rate tends to approach a constant value at temperatures exceeding 1173 K. The overall rate constant is estimated by numerical calculation, taking into account the transport phenomena in the reactor, including the chemical reaction at the substrate surface. The activation energy obtained in this study is 45.8 kJ mol-1, and the rate constant is consistent with the measured etching rate behavior. A reactor system in which there is minimum etching of the fused silica chamber by ClF3 gas can be achieved using an IR lamp heating unit and a chamber cooling unit to maintain a sufficiently low temperature of the chamber wall.

  10. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Science.gov (United States)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal catalyst crystallographic structure.

  11. Postoperative sensitivity of self etch versus total etch adhesive.

    Science.gov (United States)

    Yousaf, Ajmal; Aman, Nadia; Manzoor, Manzoor Ahmed; Shah, Jawad Ali; Dilrasheed

    2014-06-01

    To compare postoperative sensitivity following composite restoration placed in supra gingival class-V cavities using self etch adhesive and total etch adhesive. A randomized clinical trial. Operative Dentistry Department of Armed Forces Institute of Dentistry, Rawalpindi, from July to December 2009. A total of 70 patients having class-V supra gingival carious lesions were divided into two groups. Classes-V cavities not exceeding 3 mm were prepared. One treatment group was treated with self etch adhesive (adhe SE one Ivoclar) and the control group was treated with total-etch adhesive (Eco-Etch Ivoclar) after acid etching with 37% phosphoric acid. Light cured composite (Te-Econom Ivoclar) restoration was placed for both groups and evaluated for postoperative sensitivity immediately after restoration, after 24 hours and after one week. Data was recorded on visual analogue scale. Comparison of sensitivity between the two treatment groups on application cold stimulus after 24 hours of restoration showed significant difference; however, no statistically significant difference was observed at baseline, immediately after restoration and at 1 week follow-up with cold stimulus or compressed air application. Less postoperative sensitivity was observed at postoperative 24 hours assessment in restoration placed using SE adhesives compared to TE adhesives. Thus, the use of SE adhesives may be helpful in reducing postoperative sensitivity during 24 hours after restoration placement.

  12. Revealing of defects in CdTe crystals by DSL etching

    NARCIS (Netherlands)

    Bissoli, F.; Weyher, J.L.; Zappettini, A.; Zha, M.; Zanotti, L.

    2005-01-01

    The effect of DS(L) (Diluited Sirtl with or without Light) solution on CadmiumTelluride crystals has been studied in comparison with the actions due to Inoue and Nakagawa etching solutions. The use of chemical etching to reveal extended defects is a fast and useful technique for characterizing the

  13. Velocity sources as an explanation for experimentally observed variations in Si{111} etch rates

    NARCIS (Netherlands)

    Nijdam, A.J.; Berenschot, Johan W.; van Suchtelen, J.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt

    In anisotropic wet-chemical etching of silicon the etch rate ratio of [Left Angle Bracket] 100 [Right Angle Bracket] to [Left Angle Bracket] 111 [Right Angle Bracket] orientations is an important parameter that determines the reproducibility and accuracy of microstructures. Up to now, it is not

  14. Revealing of defects in CdTe crystals by DSL etching

    NARCIS (Netherlands)

    Bissoli, F.; Weyher, J.L.; Zappettini, A.; Zha, M.; Zanotti, L.

    2005-01-01

    The effect of DS(L) (Diluited Sirtl with or without Light) solution on CadmiumTelluride crystals has been studied in comparison with the actions due to Inoue and Nakagawa etching solutions. The use of chemical etching to reveal extended defects is a fast and useful technique for characterizing the c

  15. Influence of etching and annealing on evolution of surface structure of metallic glass

    Science.gov (United States)

    Ushakov, Ivan V.; Feodorov, Victor A.; Permyakova, Inga J.

    2004-04-01

    Evolution of surface structure of metallic glass subjected to etching was investigated. The changes of surface structure of metallic glass 82K3XCP after chemical etching and different modes of annealing were studied. Samples of metallic glass were etched in solutions of sulphurous acid with different concentration. Corrosion-resistance was determined. The dependence of corrosion rate on acid concentration was found. Characteristic concentric circumferences on the etching surface were investigated. Their formation mechanism is discussed. Crystallization on surface stimulated by both acid and annealing was examined. The formation of first dendrites on surface of annealed metallic glass and their evolution were investigated.

  16. Numerical and experimental studies of the carbon etching in EUV-induced plasma

    CERN Document Server

    Astakhov, D I; Lee, C J; Ivanov, V V; Krivtsun, V M; Yakushev, O; Koshelev, K N; Lopaev, D V; Bijkerk, F

    2015-01-01

    We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate.

  17. Chemical cartography of the milky way disk with the SDSS-III/Apogee survey

    Science.gov (United States)

    Hayden, Michael R.

    In this thesis I discuss the chemical structure of the Milky Way disk. Much of our knowledge of the Milky Way is restricted to the solar neighborhood due to the significant dust extinction directly in the plane of the Galaxy. SDSS-III/APOGEE is a high-resolution spectroscopic survey of more than 100,000 giant stars operating in the infrared, where extinction is ~ 1/6 compared to visual wavelengths. Individual stars are useful tracers for studying the chemical and kinematic history of the Galaxy, as they contain the chemical imprint of the gas from which they formed. I develop a Bayesian method to determine distances to every star in the APOGEE survey by comparing the observed stellar parameters from APOGEE to theoretical stellar isochrones. Using observations taken during the first year of APOGEE operations, I made mean metallicity maps and characterized radial and vertical chemical abundance gradients across the entire disk of the Galaxy at a range of heights about the plane, from 0 < R < 15 kpc and 0 < ∣z∣ < 3 kpc. Different stellar populations can be separated using [ a/Fe] abundance, and I analyze the stellar distribution in the [ a/Fe] vs. [Fe/H] plane across the disk from 3 < R < 15 kpc and at a range of heights above the plane (∣z∣ < 2 kpc) using the full three years of APOGEE observations. The metallicity distribution function (MDF) is a primary constraint for chemical evolution models, and I measure the MDF across the disk of the Milky Way. I find that the peak metallicity and shape of the MDF is a strong function of location within the Galaxy. Close to the plane, the inner disk is peaked at super-solar metallicities with a long tail towards lower metallicities (negative skewness), while the outer disk is peaked at sub-solar metallicities and a tail towards higher metallicities (positive skewness). The change in skewness with radius is difficult to explain using traditional chemical evolution models, and I made a simple model of the dynamics of the

  18. Electron Beam Etching of CaO Crystals Observed Atom by Atom.

    Science.gov (United States)

    Shen, Yuting; Xu, Tao; Tan, Xiaodong; Sun, Jun; He, Longbing; Yin, Kuibo; Zhou, Yilong; Banhart, Florian; Sun, Litao

    2017-08-09

    With the rapid development of nanoscale structuring technology, the precision in the etching reaches the sub-10 nm scale today. However, with the ongoing development of nanofabrication the etching mechanisms with atomic precision still have to be understood in detail and improved. Here we observe, atom by atom, how preferential facets form in CaO crystals that are etched by an electron beam in an in situ high-resolution transmission electron microscope (HRTEM). An etching mechanism under electron beam irradiation is observed that is surprisingly similar to chemical etching and results in the formation of nanofacets. The observations also explain the dynamics of surface roughening. Our findings show how electron beam etching technology can be developed to ultimately realize tailoring of the facets of various crystalline materials with atomic precision.

  19. Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Yin, W. T.; Huang, J.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2011-08-01

    A novel mask technique utilizing patterned silicon dioxide films has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal-plane arrays (IRFPAs). High-density silicon dioxide films were deposited at temperature of 80°C, and a procedure for patterning and etching of HgCdTe was developed by standard photolithography and wet chemical etching. Scanning electron microscopy (SEM) showed that the surfaces of inductively coupled plasma (ICP) etched samples were quite clean and smooth. Root-mean-square (RMS) roughness characterized by atomic force microscopy (AFM) was less than 1.5 nm. The etching selectivity between a silicon dioxide film and HgCdTe in the samples masked with patterned silicon dioxide films was greater than 30:1. These results show that the new masking technique is readily available and promising for HgCdTe mesa etching.

  20. Silicon Deep Etching Techniques for MEMS Devices

    Institute of Scientific and Technical Information of China (English)

    WU Ying; OU Yi-hong; JIANG Yong-qing; LI Bin

    2003-01-01

    Silicon deep etching technique is the key fabrication step in the development of MEMS. The mask selectivity and the lateral etching control are the two primary factors that decide the result of deep etching process. These two factors are studied in this paper. The experimental results show that the higher selectivity can be gotten when F- gas is used as etching gas and Al is introduced as mask layer. The lateral etching problems can be solved by adjusting the etching condition, such as increasing the RF power, changing the gas composition and flow volume of etching machine.

  1. Chemical Evolution in High-Mass Star-Forming Regions: Results from the MALT90 Survey

    CERN Document Server

    Hoq, Sadia; Foster, Jonathan B; Sanhueza, Patricio; Guzman, Andres; Whitaker, J Scott; Claysmith, Christopher; Rathborne, Jill M; Vasyunina, Tatiana; Vasyunin, Anton

    2013-01-01

    The chemical changes of high-mass star-forming regions provide a potential method for classifying their evolutionary stages and, ultimately, ages. In this study, we search for correlations between molecular abundances and the evolutionary stages of dense molecular clumps associated with high-mass star formation. We use the molecular line maps from Year 1 of the Millimetre Astronomy Legacy Team 90 GHz (MALT90) Survey. The survey mapped several hundred individual star-forming clumps chosen from the ATLASGAL survey to span the complete range of evolution, from prestellar to protostellar to H II regions. The evolutionary stage of each clump is classified using the Spitzer GLIMPSE/MIPSGAL mid-IR surveys. Where possible, we determine the dust temperatures and H2 column densities for each clump from Herschel Hi-GAL continuum data. From MALT90 data, we measure the integrated intensities of the N2H+, HCO+, HCN and HNC (1-0) lines, and derive the column densities and abundances of N2H+ and HCO+. The Herschel dust tempe...

  2. Normal growth kinetics of L-alanine doped ZTS crystals and chemical etching studies%L-丙氨酸掺杂下ZTS晶体法向生长动力学及化学侵蚀研究

    Institute of Scientific and Technical Information of China (English)

    曹亚超; 李明伟; 潘翠连; 朱廷霞; 尹华伟; 程旻

    2014-01-01

    通过对 L-丙氨酸掺杂下 ZTS(100)、(010)及(001)面法向生长速度的研究发现,各晶面法向生长速度随过饱和度的增加而线性增加;随掺杂浓度的增加,(100)面的法向生长速度先增大后减小,而(010)及(001)面的法向生长速度先减小,接着增大,然后又减小。分析表明(100)面以位错生长机制为主,(010)及(001)面以连续生长机制为主。利用光学显微镜在侵蚀后的(100)面观察到矩形位错蚀坑,蚀坑密度为33~308 mm-2;掺杂浓度为1%(摩尔分数)时,蚀坑密度最小。%Via studying the normal growth rates of the (100),(010)and (001)faces of ZTS crystal under differ-ent doping concentrations of L-alanine,we found that the normal growth rate of ZTS crystal increased linearly with the increase of supersaturation.With increase of doping concentration,L-alanine addition led to an initial increase and then a decrease of the normal growth rate of the (100)face.However,L-alanine doping led to a de-crease first,followed by an increase and then a decrease again of the normal growth rates of the (0 1 0 )and (001)faces.The growth of (100)face was featured mainly by the dislocation mechanism,and the growth of (010)and (001)faces are,however,featured by the continuous growth model as supported by the experimental results.Well-defined dislocation pits of rectangular shape were observed on the chemical etching (100)face of ZTS crystal by using optical microscopy.The dislocation density of (100)face was 33-308 mm-2 .Study results indicated that dislocation density could be minimized when L-alanine concentration was set at 1 mol%.

  3. A Survey of the Role of Thermodynamics and Transport Properties in Chemical Engineering University Education in Europe and the USA

    Science.gov (United States)

    Ahlstrom, Peter; Aim, Karel; Dohrn, Ralf; Elliott, J. Richard; Jackson, George; Jaubert, Jean-Noel; Macedo, Eugenia A.; Pokki, Juha-Pekka; Reczey, Kati; Victorov, Alexey; Zilnik, Ljudmila Fele; Economou, Ioannis G.

    2010-01-01

    A survey on the teaching of thermodynamics and transport phenomena in chemical engineering curricula in European and US Universities was performed and results are presented here. Overall, 136 universities and colleges responded to the survey, out of which 81 from Europe and 55 from the USA. In most of the institutions responding at least two…

  4. A Survey of the Role of Thermodynamics and Transport Properties in Chemical Engineering University Education in Europe and the USA

    Science.gov (United States)

    Ahlstrom, Peter; Aim, Karel; Dohrn, Ralf; Elliott, J. Richard; Jackson, George; Jaubert, Jean-Noel; Macedo, Eugenia A.; Pokki, Juha-Pekka; Reczey, Kati; Victorov, Alexey; Zilnik, Ljudmila Fele; Economou, Ioannis G.

    2010-01-01

    A survey on the teaching of thermodynamics and transport phenomena in chemical engineering curricula in European and US Universities was performed and results are presented here. Overall, 136 universities and colleges responded to the survey, out of which 81 from Europe and 55 from the USA. In most of the institutions responding at least two…

  5. A Survey of Industrial Organic Chemists: Understanding the Chemical Industry's Needs of Current Bachelor-Level Graduates

    Science.gov (United States)

    Fair, Justin D.; Kleist, Elyse M.; Stoy, Dylan M.

    2014-01-01

    A survey was conducted of companies from the chemical industry with an emphasis on the organic division. The data include results from 377 respondents from more than 100 different companies. More than half of all undergraduates gain fulltime work in the chemical industry or government after graduating with a bachelor's degree in chemistry.…

  6. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1987-03-10

    A method is described of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from the first material. The second material is not substantially etched during the method which comprises: subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons not present, the conditions also being such that the resultant electronic structure of the first semiconductor material under the photon flux is sufficient for the first material to undergo substantial photochemical etching under the conditions. The conditions also are such that the resultant electronic structure of the second semiconductor material under the photon flux is not sufficient for the second material to undergo substantial photochemical etching under the conditions.

  7. The Nainital-Cape Survey-III : A Search for Pulsational Variability in Chemically Peculiar Stars

    CERN Document Server

    Joshi, S; Chakradhari, N K; Tiwari, S K; Billaud, C

    2009-01-01

    The Nainital-Cape survey is a dedicated research programme to search and study pulsational variability in chemically peculiar stars in the Northern Hemisphere. The aim of the survey is to search such chemically peculiar stars which are pulsationally unstable. The observations of the sample stars were carried out in high-speed photometric mode using a three-channel fast photometer attached to the 1.04-m Sampurnanand telescope at ARIES. The new photometric observations confirmed that the pulsational period of star HD25515 is 2.78-hrs. The repeated time-series observations of HD113878 and HD118660 revealed that previously known frequencies are indeed present in the new data sets. We have estimated the distances, absolute magnitudes, effective temperatures and luminosities of these stars. Their positions in the H-R diagram indicate that HD25515 and HD118660 lie near the main-sequence while HD113878 is an evolved star. We also present a catalogue of 61 stars classified as null results, along with the corresponding...

  8. Comment on the paper "Synthesis, growth, structural, spectral, thermal, chemical etching, linear and nonlinear optical and mechanical studies of an organic single crystal 4-chloro 4-nitrostilbene (CONS): a potential NLO material" by P.M. Dinakaran, S. Kalainathan [Spectrochim. Acta A 111 (2013) 123-130].

    Science.gov (United States)

    Srinivasan, Bikshandarkoil R; Dhuri, Sunder N; Nadkarni, V S

    2014-01-03

    We argue that (trans)-4-chloro-4'-nitrostilbene is not a new organic nonlinear optical material as claimed by Dinakaran and Kalainathan [P.M. Dinakaran, S. Kalainathan, Synthesis, growth, structural, spectral, thermal, chemical etching, linear and nonlinear optical and mechanical studies of an organic single crystal 4-Chloro 4-Nitrostilbene (CONS): a potential NLO material, Spectrochim. Acta A 111 (2013) 123-130], but instead a well-known compound whose synthesis, spectral data, single crystal structure and second harmonic generation (SHG) efficiency are well documented in the literature. The title paper is completely erroneous. Copyright © 2013 Elsevier B.V. All rights reserved.

  9. The Gaia-ESO Survey: Separating disk chemical substructures with cluster models

    CERN Document Server

    Rojas-Arriagada, A; de Laverny, P; Schultheis, M; Guiglion, G; Mikolaitis, Š; Kordopatis, G; Hill, V; Gilmore, G; Randich, S; Alfaro, E J; Bensby, T; Koposov, S E; Costado, M T; Franciosini, E; Hourihane, A; Jofré, P; Lardo, C; Lewis, J; Lind, K; Magrini, L; Monaco, L; Morbidelli, L; Sacco, G G; Worley, C C; Zaggia, S; Chiappini, C

    2015-01-01

    (Abridged) Recent spectroscopic surveys have begun to explore the Galactic disk system outside the solar neighborhood on the basis of large data samples. In this way, they provide valuable information for testing spatial and temporal variations of disk structure kinematics and chemical evolution. We used a Gaussian mixture model algorithm, as a rigurous mathematical approach, to separate in the [Mg/Fe] vs. [Fe/H] plane a clean disk star subsample from the Gaia-ESO survey internal data release 2. We find that the sample is separated into five groups associated with major Galactic components; the metal-rich end of the halo, the thick disk, and three subgroups for the thin disk sequence. This is confirmed with a sample of red clump stars from the Apache Point Observatory Galactic Evolution Experiment (APOGEE) survey. The two metal-intermediate and metal-rich groups of the thin disk decomposition ([Fe/H]>-0.25 dex) highlight a change in the slope at solar metallicity. This holds true at different radial regions. ...

  10. Etched track radiometers in radon measurements: a review

    CERN Document Server

    Nikolaev, V A

    1999-01-01

    Passive radon radiometers, based on alpha particle etched track detectors, are very attractive for the assessment of radon exposure. The present review considers various devices used for measurement of the volume activity of radon isotopes and their daughters and determination of equilibrium coefficients. Such devices can be classified into 8 groups: (i) open or 'bare' detectors, (ii) open chambers, (iii) sup 2 sup 2 sup 2 Rn chambers with an inlet filter, (iv) advanced sup 2 sup 2 sup 2 Rn radiometers, (v) multipurpose radiometers, (vi) radiometers based on a combination of etched track detectors and an electrostatic field, (vii) radiometers based on etched track detectors and activated charcoal and (viii) devices for the measurement of radon isotopes and/or radon daughters by means of track parameter measurements. Some of them such as the open detector and the chamber with an inlet filter have a variety of modifications and are applied widely both in geophysical research and radon dosimetric surveys. At the...

  11. Award-Winning Etching Process Cuts Solar Cell Costs (Revised) (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2011-05-01

    The NREL "black silicon" nanocatalytic wet-chemical etch is an inexpensive, one-step method to minimize reflections from crystalline silicon solar cells. The technology enables high-efficiency solar cells without the use of expensive antireflection coatings.

  12. Novel diamantane polymer platform for enhanced etch resistance

    Science.gov (United States)

    Padmanaban, Munirathna; Chakrapani, Srinivasan; Lin, Guanyang; Kudo, Takanori; Parthasarathy, Deepa; Rahman, Dalil; Anyadiegwu, Clement; Antonio, Charito; Dammel, Ralph R.; Liu, Shenggao; Lam, Frederick; Waitz, Anthony; Yamagchi, Masao; Maehara, Takayuki

    2007-03-01

    The dominant current 193 nm photoresist platform is based on adamantane derivatives. This paper reports on the use of derivatives of diamantane, the next higher homolog of adamantane, in the diamondoid series, as monomers in photoresists. Due to their low Ohnishi number and incremental structural parameter (ISP), such molecules are expected to enhance dry etch stability when incorporated into polymers for resist applications. Starting from the diamantane parent, cleavable and non-cleavable acrylate/methacrylate derivatives of diamantane were obtained using similar chemical steps as for adamantane derivatization. This paper reports on the lithographic and etch performance obtained with a number of diamantane-containing monomers, such as 9-hydroxy-4-diamantyl methacrylate (HDiMA), 2-ethyl-2- diamantyl methacrylate (EDiMA), and 2-methyl-2-diamantyl methacrylate (MDiMA). The etch advantage, dry and wet lithographic performance of some of the polymers obtained from these diamantane-containing polymers are discussed.

  13. Change in surface morphology of polytetrafluoroethylene by reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Tomohiro, E-mail: tmhr_tkhs.d01@ruri.waseda.j [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Hirano, Yuki; Takasawa, Yuya; Gowa, Tomoko; Fukutake, Naoyuki [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Oshima, Akihiro [The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Tagawa, Seiichi [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Washio, Masakazu [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan)

    2011-02-15

    Polytetrafluoroethylene (PTFE) was exposed to Ar, CF{sub 4}, N{sub 2} and O{sub 2} plasmas using a reactive ion etching facility. After the exposure, the change in the surface morphology of PTFE was examined and characterization studies were performed for the etching rate, surface roughness, radical yields, chemical structures, water repellency and so on. The etching rates of Ar, CF{sub 4}, N{sub 2} and O{sub 2} plasmas were 0.58, 7.2, 4.4 and 17 {mu}m/h, respectively. It was observed that needle-like nano-fiber structures on the surface were irregularly fabricated by the CF{sub 4} plasma. In addition, when the water repellency of exposed samples was evaluated by contact angle, they showed super-hydrophobic properties: contact angle over 150{sup o}.

  14. Anisotropic fluorocarbon plasma etching of silicon/silicon germanide heterostructures and plasma etching-induced sidewall damage

    Science.gov (United States)

    Ding, Ruhang

    Plasma etching is a critical tool in the fabrication of Si/SiGe heterostructure quantum devices, but with challenges addressed herein, including (1) control of etch profiles and (2) damage to etched feature sidewalls that affects device performance. (1) Fluorocarbon-based plasma etching often results in device profiles with undercuts due to preferential etching of SiGe over silicon. A C4F8/N2/Ar etch plasma gas mixture introduced here has been successfully used to achieve straight sidewalls through heterostructure layers by formation of a fluorocarbon inhibitor film on feature sidewalls to prevent undercutting. (2) Chemical and structural changes in the semiconductor at feature sidewalls associated with plasma-surface interactions are considered damage, as they affect band structure and electrical conduction in the active region of the device, known as the 2-dimensional electron gas (2DEG). In experiments designed to better understand the mechanisms of plasma-induced sidewall damage, damage to straight wires was characterized both by the width of a non-conductive "sidewall depletion" region at the device sidewall, and by the noise level factor, gamma H/N, determined from spectra of low frequency noise. Observed increases in sidewall depletion width with increasing etch depth are tentatively attributed to the increase in total number of defects with increased plasma exposure time. Excess negative charge incorporated into the fluorocarbon inhibitor film could be another contributing factor. Other factors considered, including defects at the bottom of etched features as well as leakage current bypassing the wire, are ruled out as their contribution is expected to diminish as the distance between the 2DEG and feature bottom increases. The noise level factor, gammaH /N, shows a maximum with increasing etch depth, possibly the result of two competing effects: increasing ion dose and decreasing leakage current. The noise level shows a minimum at an ion bombardment energy

  15. Regenerative Electroless Etching of Silicon.

    Science.gov (United States)

    Kolasinski, Kurt W; Gimbar, Nathan J; Yu, Haibo; Aindow, Mark; Mäkilä, Ermei; Salonen, Jarno

    2017-01-09

    Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox1 ) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox2 ) that would be unreactive in the primary reaction. Ox2 is used to regenerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox2 added, and the rate of reaction is controlled by the injection rate of Ox2 . This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2 O5 in HF(aq) as Ox1 and H2 O2 (aq) as Ox2 with Si powder and wafers.

  16. Chemical Evolution in High-mass Star-forming Regions: Results from the MALT90 Survey

    Science.gov (United States)

    Hoq, Sadia; Jackson, James M.; Foster, Jonathan B.; Sanhueza, Patricio; Guzmán, Andrés; Whitaker, J. Scott; Claysmith, Christopher; Rathborne, Jill M.; Vasyunina, Tatiana; Vasyunin, Anton

    2013-11-01

    The chemical changes of high-mass star-forming regions provide a potential method for classifying their evolutionary stages and, ultimately, ages. In this study, we search for correlations between molecular abundances and the evolutionary stages of dense molecular clumps associated with high-mass star formation. We use the molecular line maps from Year 1 of the Millimetre Astronomy Legacy Team 90 GHz (MALT90) Survey. The survey mapped several hundred individual star-forming clumps chosen from the ATLASGAL survey to span the complete range of evolution, from prestellar to protostellar to H II regions. The evolutionary stage of each clump is classified using the Spitzer GLIMPSE/MIPSGAL mid-IR surveys. Where possible, we determine the dust temperatures and H2 column densities for each clump from Herschel/Hi-GAL continuum data. From MALT90 data, we measure the integrated intensities of the N2H+, HCO+, HCN and HNC (1-0) lines, and derive the column densities and abundances of N2H+ and HCO+. The Herschel dust temperatures increase as a function of the IR-based Spitzer evolutionary classification scheme, with the youngest clumps being the coldest, which gives confidence that this classification method provides a reliable way to assign evolutionary stages to clumps. Both N2H+ and HCO+ abundances increase as a function of evolutionary stage, whereas the N2H+ (1-0) to HCO+ (1-0) integrated intensity ratios show no discernable trend. The HCN (1-0) to HNC(1-0) integrated intensity ratios show marginal evidence of an increase as the clumps evolve.

  17. Innovative, Inexpensive Etching Technique Developed for Polymer Electro- Optical Structures

    Science.gov (United States)

    Nguyen, Hung D.

    1999-01-01

    Electro-optic, polymer-based integrated optic devices for high-speed communication and computing applications offer potentially significant advantages over conventional inorganic electro-optic crystals. One key area of integrated optical technology--primary processing and fabrication--may particularly benefit from the use of polymer materials. However, as efforts concentrate on the miniaturization of electro-integrated circuit pattern geometries, the ability to etch fine features and smoothly sloped sidewalls is essential to make polymers useful for electro-integrated circuit applications. There are many existing processes available to etch polymer materials, but they all yield nearly vertical sidewalls. Vertical sidewalls are too difficult to reliably cover with a metal layer, and incomplete metalization degrades microwave performance, particularly at high frequency. However, obtaining a very sloped sidewall greatly improves the deposition of metal on the sidewall, leading to low-loss characteristics, which are essential to integrating these devices in highspeed electro-optic modulators. The NASA Lewis Research Center has developed in-house an inexpensive etching technique that uses a photolithography method followed by a simple, wet chemical etching process to etch through polymer layers. In addition to being simpler and inexpensive, this process can be used to fabricate smoothly sloped sidewalls by using a commercial none rodible mask: Spin-On-Glass. A commercial transparent material, Spin-On-Glass, uses processes and equipment similar to that for photoresist techniques.

  18. Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops

    Energy Technology Data Exchange (ETDEWEB)

    English, Timothy S., E-mail: englisht@stanford.edu [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Provine, J [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Marshall, Ann F.; Koh, Ai Leen [Stanford Nano Shared Facilities, Stanford University, Stanford, CA 94305 (United States); Kenny, Thomas W. [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States)

    2016-07-15

    Specimen preparation remains a practical challenge in transmission electron microscopy and frequently limits the quality of structural and chemical characterization data obtained. Prevailing methods for thinning of specimens to electron transparency are serial in nature, time consuming, and prone to producing artifacts and specimen failure. This work presents an alternative method for the preparation of plan-view specimens using isotropic vapor-phase etching with integrated etch stops. An ultrathin amorphous etch-stop layer simultaneously serves as an electron transparent support membrane whose thickness is defined by a controlled growth process such as atomic layer deposition with sub-nanometer precision. This approach eliminates the need for mechanical polishing or ion milling to achieve electron transparency, and reduces the occurrence of preparation induced artifacts. Furthermore, multiple specimens from a plurality of samples can be thinned in parallel due to high selectivity of the vapor-phase etching process. These features enable dramatic reductions in preparation time and cost without sacrificing specimen quality and provide advantages over wet etching techniques. Finally, we demonstrate a platform for high-throughput transmission electron microscopy of plan-view specimens by combining the parallel preparation capabilities of vapor-phase etching with wafer-scale micro- and nanofabrication. - Highlights: • Parallel thinning of plan-view specimens enables high-throughput microscopy studies. • The support membrane thickness is controlled with sub-nanometer precision. • No physical etching (polishing, dimpling, or ion milling) is required. • Large area and uniformly thin specimens are suitable for Cs-corrected HRTEM. • Wafer-scale integration enables custom specimens for in situ experiments.

  19. Quantificational Etching of AAO Template

    Institute of Scientific and Technical Information of China (English)

    Guojun SONG; Dong CHEN; Zhi PENG; Xilin SHE; Jianjiang LI; Ping HAN

    2007-01-01

    Ni nanowires were prepared by electrodeposition in porous anodized aluminum oxide (AAO) template from a composite electrolyte solution. Well-ordered Ni nanowire arrays with controllable length were then made by the partial removal of AAO using a mixture of phosphoric acid and chromic acid (6 wt pct H3PO4:1.8 wt pct H3CrO4). The images of Ni nanowire arrays were studied by scanning electron microscopy (SEM) to determine the relationship between etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed from the template can be accurately controlled by controlling etching time.

  20. Homogeneous luminescent stain etched porous silicon elaborated by a new multi-step stain etching method

    Energy Technology Data Exchange (ETDEWEB)

    Hajji, M., E-mail: mhajji2001@yahoo.fr [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia); Institut Supérieur d’Electronique et de Communication de Sfax, route Menzel Chaker Km 0.5, BP 868, Sfax 3018 (Tunisia); Khalifa, M.; Slama, S. Ben; Ezzaouia, H. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia)

    2013-11-01

    This paper presents a new method to produce porous silicon which derived from the conventional stain etching (SE) method. But instead of one etching step that leads to formation of porous layer, the substrate is subjected to an initial etching step with a duration Δt{sub 0} followed by a number of supplementary short steps that differs from a layer to another. The duration of the initial step is just the necessary time to have a homogenous porous layer on the whole surface of the substrate. It was found that this duration is largely dependent of the doping type and level of the silicon substrate. The duration of supplementary steps was kept as short as possible to prevent the formation of bubbles on the silicon surface during silicon dissolution which leads generally to inhomogeneous porous layers. It is found from surface investigation by atomic force microscopy (AFM) that multistep stain etching (MS-SE) method allows to produce homogeneous porous silicon nanostructures compared to the conventional SE method. The chemical composition of the obtained porous layers has been evaluated using Fourier transform infrared spectroscopy (FTIR). Photoluminescence (PL) measurement shows that porous layers produced by SE and MS-SE methods have comparable spectra indicating that those layers are composed of nanocrystallites with comparable sizes. But the intensity of photoluminescence of layer elaborated by MS-SE method is higher than that elaborated by the SE method. Total reflectance characteristics show that the presented method allows the production of porous silicon layers with controllable thicknesses and optical properties. Results for porous silicon layers elaborated on heavily doped n-type silicon show that the reflectance can be reduced to values less than 3% in the major part of the spectrum.

  1. Growth of carbon nanotubes on Si/SiO{sub 2} wafer etched by hydrofluoric acid under different etching durations

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Lling-Lling [Chemical Engineering Discipline, School of Engineering, Monash University, Jalan Lagoon Selatan, 46150 Bandar Sunway, Selangor (Malaysia); Chai, Siang-Piao, E-mail: chai.siang.piao@monash.edu [Chemical Engineering Discipline, School of Engineering, Monash University, Jalan Lagoon Selatan, 46150 Bandar Sunway, Selangor (Malaysia); Mohamed, Abdul Rahman [School of Chemical Engineering, Universiti Sains Malaysia, Engineering Campus, Seri Ampangan, 14300 NibongTebal, Pulau Pinang (Malaysia)

    2012-05-15

    The preparation of SiO{sub 2} nanoparticles for the metal-free catalyst growth of carbon nanotubes (CNTs) was investigated. SiO{sub 2} nanoparticles were generated by etching Si/SiO{sub 2} wafers with 48-50% hydrofluoric acid. Etching duration was varied to study its effects on the generation of the SiO{sub 2} nanoparticles. Atomic force microscopy characterization showed that etching at 1 min was the most effective considering the significant numbers of SiO{sub 2} nanoparticles obtained under this condition. The wafer etched at 1 min after chemical vapor deposition at 900 Degree-Sign C for 1 h demonstrated a low I{sub D}/I{sub G} from Raman analysis which establishes that CNTs with highly ordered graphitic structures were grown. Raman analysis also showed a strong radial breathing mode peak in the low-frequency range for the substrate following the 1 min etching process after the reaction.

  2. Survey of reproductive hazards among oil, chemical, and atomic workers exposed to halogenated hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Savitz, D.A.; Harley, B.; Krekel, S.; Marshall, J.; Bondy, J.; Orleans, M.

    1984-01-01

    Several halogenated hydrocarbons are suspected of causing adverse reproductive effects. Because of such concerns, the Oil, Chemical, and Atomic Workers International Union surveyed the reproductive histories of two groups of workers. One group worked at plants engaged in the production or use of halogenated hydrocarbons (exposed) whereas the others had no such opportunity for exposure (nonexposed). Although a low response rate precludes firm conclusions, the 1,280 completed questionnaires provide useful data for generating hypotheses in this developing field of interest. A history of diagnosed cancer was reported more frequently among exposed workers. The infant mortality rate was also significantly elevated among the offspring of exposed workers. No risk gradient was observed for episodes of infertility, fetal loss, congenital defects, or low-birthweight offspring. Concerns with nonresponse, exposure characterization, possible confounding factors, and limited statistical power are addressed. The results provide further suggestions which help to direct studies of occupational reproductive risks.

  3. A NEW BIOGENIC SULFIDE CHEMICAL SENSOR FOR MARINE ENVIRONMENTAL MONITORING AND SURVEY

    Institute of Scientific and Technical Information of China (English)

    宋金明; 赵卫东

    2001-01-01

    A new convenient sulfide electrochemical sensor for marine environmental insitumonitoring and real time survey was developed. The new sensor based on a solid Ag2 S membrane electrode has outstanding chemical sensitivity and stability. It responds to the activity of sulfide ions according to a Nernsfian slope of - 31mV/decade. The sensor can be used to determine the total concentration of sulfides ( CT ) by calibrating the pH value of the solution to a standard pH. The practical measurement range for total sulfide concentration is 0.1 - 10 mg/L in seawater. The sensor has a very low potential drift ( < 4mV) during two months in 0.1 mg/L sulfide seawater. This paper describes the preparation of the sensitive membrane and some main properties of the sensor.

  4. A NEW BIOGENIC SULFIDE CHEMICAL SENSOR FOR MARINE ENVIRONMENTAL MONITORING AND SURVEY

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A new convenient sulfide electrochemical sensor for marine environmental in-situ monitoring and real time survey was developed. The new sensor based on a solid Ag2S membrane electrode has outstanding chemical sensitivity and stability. It responds to the activity of sulfide ions according to a Nernstian slope of -31mV/decade. The sensor can be used to determine the total concentration of sulfides (CT) by calibrating the pH value of the solution to a standard pH. The practical measurement range for total sulfide concentration is 0.1-10 mg/L in seawater. The sensor has a very low potential drift (<4mV) during two months in 0.1 mg/L sulfide seawater. This paper describes the preparation of the sensitive membrane and some main properties of the sensor.

  5. Etching high aspect ratio structures in silicon using sulfur hexafluoride/oxygen plasma

    Science.gov (United States)

    Belen, Rodolfo Jun

    Plasma etching of high aspect ratio structures in Si is an important step in manufacturing capacitors for memory devices and integrated components of microelectromechanical systems. In these applications, the goal is to etch deep features anisotropically with high etch rates and selectivities to the mask while maintaining good uniformity and reproducibility. This study investigates the etching of deep sub-half-micron diameter holes in Si using SF6/O 2 plasma. Etching experiments and plasma diagnostics are combined with modeling to gain a fundamental understanding of the etching and passivation kinetics and mechanism necessary in developing and scaling-up processes. Etching experiments are conducted in an inductively coupled plasma reactor with a planar coil. The substrate electrode is biased with a separate rf power supply to achieve independent control of the ion flux and energy. The effects of pressure, rf-bias and SF6-to-O2 ratio in the feed gas on the etch rate, selectivity and feature profile shape are studied using Si wafers patterned with 0.35 mum-diameter holes in a SiO2 mask. Visualization of profiles using scanning electron microscopy is complemented by plasma diagnostics such as mass spectrometry and actinometry. Simultaneous with experiments, reactor-scale and feature-scale models are developed to quantify the etching and passivation kinetics and identify the important kinetic parameters that affect feature profile evolution. Information from plasma diagnostics and previously published data are used to reduce the degrees of freedom in the model. Experiments are designed to directly measure kinetic parameters such as the chemical etch rate constant and the incidence angle dependence of the etching yield. Experimentally inaccessible parameters such as the sticking coefficients, etching yield and ion scattering parameters are determined through feature profile simulation. The key internal plasma parameters that affect profile evolution are the F-to-O and F

  6. Plasma Etching Improves Solar Cells

    Science.gov (United States)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  7. Chemical abundance gradients from open clusters in the Milky Way disk: results from the APOGEE survey

    CERN Document Server

    Cunha, Katia; Souto, Diogo; Thompson, Benjamin; Zasowski, Gail; Prieto, Carlos Allende; Carrera, Ricardo; Chiappini, Cristina; Donor, John; Garcia-Hernandez, Anibal; Perez, Ana Elia Garcia; Hayden, Michael R; Holtzman, Jon; Jackson, Kelly M; Johnson, Jennifer A; Majewski, Steven R; Meszaros, Szabolcs; Meyer, Brianne; Nidever, David L; O'Connell, Julia; Schiavon, Ricardo P; Schultheis, Mathias; Shetrone, Matthew; Simmons, Audrey; Smith, Verne V; Zamora, Olga

    2016-01-01

    Metallicity gradients provide strong constraints for understanding the chemical evolution of the Galaxy. We report on radial abundance gradients of Fe, Ni, Ca, Si, and Mg obtained from a sample of 304 red-giant members of 29 disk open clusters, mostly concentrated at galactocentric distances between ~8 - 15 kpc, but including two open clusters in the outer disk. The observations are from the APOGEE survey. The chemical abundances were derived automatically by the ASPCAP pipeline and these are part of the SDSS III Data Release 12. The gradients, obtained from least squares fits to the data, are relatively flat, with slopes ranging from -0.026 to -0.033 dex/kpc for the alpha-elements [O/H], [Ca/H], [Si/H] and [Mg/H] and -0.035 dex/kpc and -0.040 dex/kpc for [Fe/H] and [Ni/H], respectively. Our results are not at odds with the possibility that metallicity ([Fe/H]) gradients are steeper in the inner disk (R_GC ~7 - 12 kpc) and flatter towards the outer disk. The open cluster sample studied spans a significant ran...

  8. Description of Survey Data Regarding the Chemical Repackaging Plant Accident West Helena, Arkansas

    Energy Technology Data Exchange (ETDEWEB)

    Sorensen, J.H.; Vogt, B.M.

    1999-03-01

    Shortly after 1:00 p.m. on Thursday, May 8, 1997, clouds of foul-smelling smoke began pouring from an herbicide and pesticide packaging plant in West Helena, Arkansas. An alert was sounded, employees evacuated, and the West Helena fire department was called. As three firefighters prepared to enter the plant, the chemical compounds exploded, collapsing a solid concrete block wall, and killing all three firefighters. As the odorous smoky cloud drifted away from the plant, authorities ordered residents in a 2-mile area downwind of the plant to evacuate and those in the 2- to 3-mile zone to shelter in place. This study examines and compares the responses to a mail survey of those ordered to evacuate and those told to shelter in place. Among the variables examined are compliance with official orders and perceived warnings, threat perception, time and source of first warning, response times, and behavior characteristics for both populations. The findings indicate that 90% of those that were told to evacuate did so but only 27% of those told to shelter-in-place did so, with 68% opting to evacuate instead. The implications of these findings for emergency managers is that people will likely choose to evacuate when both warnings to evacuate and warnings to shelter are issued to residents in close proximity to each other. The findings on warning times closely resemble other findings from evacuations when chemical accidents occur and route notification is used for warning residents.

  9. Roughness kinetic and multiaffinity of anisotropic etched silicon

    Science.gov (United States)

    Hosseinabadi, S.; Rajabi, M.

    2017-02-01

    The effect of etching time (20-200 min) on surface roughness, statistical and fractal properties of silicon wafers during anisotropic chemical etching by KOH is investigated experimentally and theoretically. The evolution of surface morphology of silicon wafers during an anisotropic chemical etching is investigated by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and statistical methods. FESEM investigation shows the formation of pyramid like silicon micro structures that disappear in large time scales. The surface roughness increases and decreases periodically in time with a decreasing exponentially trend. The statistical analysis were performed by calculating the roughness and correlation length, distribution of height fluctuations and two-dimensional multifractal detrending moving average (MFDMA). The fractal nature of silicon wafer changes from mono fractal to multi fractal scaling by etching process and formation of pyramid like silicon nanostructures on it. The strength of multi-fractallity has not an increasing monotonic behavior. The enhancement of irregularities could be a reason for reduction of surface roughness and structure downfall.

  10. Surface characterization after subaperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

    2010-07-01

    In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

  11. Methods for dry etching semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

    2016-11-01

    The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

  12. 铝箔表面化学镀锌对其在HCl-H 2 SO 4体系中电蚀性能的影响%Effect of chemical plating Zn on DC-etching behavior of Al foil in HCl-H2SO4

    Institute of Scientific and Technical Information of China (English)

    班朝磊; 何业东; 邵鑫; 杜鹃; 王利平

    2013-01-01

    The Al foil for high voltage Al electrolytic capacitor usage was immersed in 5.0%NaOH solution containing trace amount of Zn2+and Zn was chemically plated on its surface through an immersion-reduction reaction. Such Zn-deposited Al foil was quickly transferred into HCl-H 2 SO 4 solution for DC-etching. The effects of Zn impurity on the surface and cross-section etching morphologies and electrochemical behavior of Al foil were investigated by SEM, polarization curve (PC) and electrochemical impedance spectroscopy (EIS). The special capacitance of 100 V formation voltage of etched foil was measured. The results show that the chemical plating Zn on Al substrate in alkali solution can reduce the pitting corrosion resistance, enhance the pitting current density and improve the density and uniform distribution of pits and tunnels due to formation of the micro Zn-Al galvanic local cells. The special capacitance of etched foil grows with the increase of Zn2+concentration.%将高压铝电解电容器用电子铝箔在含Zn2+的5.0%NaOH溶液中实施化学镀锌处理,然后在HCl+H2SO4电解液中进行直流电解扩面腐蚀得到腐蚀箔;采用极化曲线研究化学镀锌处理对扩面腐蚀时铝箔点蚀电流、点蚀电位的影响,利用电化学交流阻抗(EIS)研究化学镀锌处理对铝箔电解腐蚀时电化学特征的影响;使用扫描电镜(SEM)观察化学镀锌处理对腐蚀箔表面和横截面形貌的影响;测试100 V形成电压下腐蚀箔的比电容。结果表明:铝箔表面化学镀锌形成的Zn-Al微电偶有助于电蚀时降低点蚀电极反应的阻力,提高点蚀电流密度,增加铝箔表面蚀孔密度和蚀孔分布的均匀性;随着碱液中Zn2+浓度的提高,腐蚀箔的比电容逐渐增加。

  13. Fabrication of nanostructures on polyethylene terephthalate substrate by interference lithography and plasma etching.

    Science.gov (United States)

    Zhu, Mei; Li, Bihan; Choi, W K

    2013-08-01

    We report results of an attempt to create nanostructures on polyethylene terephthalate substrate using the interference lithography and plasma etching technique. Methods to create nanogrooves, nanopillars, nanofins and nanoholes have been presented. The effects of chemical and physical etching associated with plasma etching on the synthesis of nanostructures were examined in detail. Different etch rates and anisotropy as a function of plasma power and pressure were reported and explained, offering good understanding of the physics of the etching process. Ways to improve anisotropy have been suggested and experimentally verified. We show that this method can produce nanostructured substrate with wide surface coverage and good uniformity. The flexibility of this method was demonstrated in that the period and shapes of the nanopattern can be varied easily without resorting to complicated fabrication processes and machinery. Our method brings forth an easy and cost-effective way to create uniform nanostructures on a large area in a controllable fashion.

  14. Fast patterning and dry-etch of SiNχ for high resolution nanoimprint templates

    Institute of Scientific and Technical Information of China (English)

    Shu Zhen; Wan Jing; Lu Bingrui; Xie Shenqi; Chen Yifang; Qu Xinping; Liu Ran

    2009-01-01

    We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography (EBL) and a dry etch technique on a SiNx substrate, intended for large area manufacturing. To this end,the highly sensitive chemically amplified resist (CAR), NEB-22, with negative tone was used. The EBL process first defines the template pattern in NEB-22, which is then directly used as an etching mask in the subsequent reactive ion etching (RIE) on the SiNx to form the desired templates. The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied, indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask. Nevertheless, our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.

  15. Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixtures

    Science.gov (United States)

    Choi, Yong-Hee; Jang, Ho-Kyun; Jin, Jun-Eon; Joo, Min-Kyu; Piao, Mingxing; Shin, Jong Mok; Kim, Jae-Sung; Na, Junhong; Kim, Gyu Tae

    2014-04-01

    We report the etching characteristics of a stacked hafnium-indium-zinc oxide (HIZO) with a photoresist using the gas mixture of chlorine and argon (Cl2/Ar). The etching behaviors of HIZO have been investigated in terms of a source power, a bias power and a chamber pressure. As the concentration of Cl2 was increased compared to pure Ar, the etch rate of HIZO film was found slightly different from that of indium-zinc oxide (IZO) film. Moreover, to investigate the etching mechanism systematically, various inspections were carried out such as atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) depending on the portion of Cl2. Additionally, we compared the etching mechanism of HIZO film with IZO film to confirm the difference of chemical bonds caused by the influence of hafnium doping.

  16. One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution

    Institute of Scientific and Technical Information of China (English)

    Ye-hua Tang; Chun-lan Zhou; Su Zhou; Yan Zhao; Wen-jing Wang; Jian-ming Fei; Hong-bin Cao

    2013-01-01

    Currently,a conventional two-step method has been used to generate black silicon (BS)surfaces on silicon substrates for solar cell manufacturing.However,the performances of the solar cell made with such surface generation method are poor,because of the high surface recombination caused by deep etching in the conventional surface generation method for BS.In this work,a modified wet chemical etching solution with additives was developed.A zhomogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature.The BS layer had low reflectivity and shallow etching depth.The additive in the etch solution performs the function of pH-modulation.After 16-min etching,the etching depth in the samples was approximately 200 nm,and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%,BS solar cells were fabricated in the production line.The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination.An efficiency of 15,63% for the modified etching BS solar cells was achieved on a large area,ptype single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88%fill factor.

  17. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  18. Comparison of bonding performance of self-etching and etch-and-rinse adhesives on human dentin using reliability analysis.

    Science.gov (United States)

    Bradna, Pavel; Vrbova, Radka; Dudek, Michal; Roubickova, Adela; Housova, Devana

    2008-12-01

    To estimate the in vitro reliability of typical self-etching and etch-and-rinse adhesives of various application protocols. The following adhesives were applied on flat dentin surfaces of extracted human teeth (n = 223): self-etching two-step adhesives: AdheSE (AH), Clearfil SE Bond (CL), OptiBond SE (OS); one-step adhesives: Adper Prompt L-Pop (ADP), Adper Prompt (AD), and Xeno III (XE); all-in-one adhesive: iBond (IB); etch-and-rinse three-step adhesives: OptiBond FL (OF), two-step Gluma Comfort Bond (G), Excite (E) and Prime & Bond NT (PB). Composite buildups were prepared using a microhybrid composite, Opticor New. Shear bond strength was determined after 24 h of storage at 37 degrees C in distilled water. The results were analyzed with a nested ANOVA (adhesive, type of adhesive) followed by the Fisher post-hoc tests of group homogeneity at alpha = 0.05. A two-parameter Weibull distribution was used to calculate the critical shear bond strength corresponding to 5% probability of failure as a measure of system reliability. ANOVA revealed a significant decrease (p AD=IB=XE>PB=ADP, but no significant difference (p > 0.48) between the etch-and-rinse and self-etching adhesives. The corresponding characteristic bond strength of Weibull distribution ranged between 24.1 and 12.1 MPa, Weibull modulus between 8.3 and 2.1, and the critical shear bond strength varied from 16.0 to 3.0 MPa. Pronounced differences in the critical shear bond strength suggest reliability variations in the adhesive systems tested, which originate from chemical composition rather than type of adhesive.

  19. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  20. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.R.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

  1. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

  2. Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface.

    Science.gov (United States)

    Nichkalo, Stepan; Druzhinin, Anatoly; Evtukh, Anatoliy; Bratus', Oleg; Steblova, Olga

    2017-12-01

    This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this purpose, we made different Au catalyst patterns on the surface of Si substrate. This modification allowed to obtain the close-packed Au nanodrop (ND) pattern that generates the nanowires (NWs) and the well-separated Au NDs, which induce the nanopore (NP) formation. The antireflective properties of these structures in comparison with NWs produced by the conventional Ag-MacEtch method were analysed. The total surface reflectance of 1~7% for SiNWs and ~17% for SiNPs was observed over the entire Si-absorbing region. Moreover, SiNWs prepared by Au-MacEtch demonstrate better antireflective properties in contrast to those formed by conventional Ag-assisted chemical etching. So, the use of SiNWs produced by the modified Au-MacEtch method as the antireflective material is favored over those prepared by Ag-MacEtch due to their higher light absorption and lower reflectance. The possible reason of these findings is discussed.

  3. An Analysis and Research on the Transmission Ratio of Dye Sensitized Solar Cell Photoelectrodes by Using Different Etching Process

    Directory of Open Access Journals (Sweden)

    Chin-Guo Kuo

    2013-01-01

    Full Text Available Classical photoelectrodes for Dye Sensitized Solar Cells (DSSCs were fabricated by using the electrochemical method on the titanium (Ti template, for that the fabrication process would influence the characteristics of the DSSCs. In this study, at first three different methods were used to etch Ti templates from 10 to 17 min, (1 polishing-chemical etching: Ti template was annealed at 450°C for 1 h, abraded using number 80 to 1500 SiC sheet, and then etched in a solution of 5% HF + 95% H2O; (2 electrochemical polishing-chemical etching: Ti template was annealed at 450°C for 1 h, electrolytic polishing with 42% CH3OH + 5% HClO4 + 53% HOCH2CH2OC4H9 solution, and the chemical-etching in a solution of 5% HF + 95% H2O; (3 chemical etching: Ti template was etched in a solution of 5% HF + 95% H2O and annealed at 450°C for 1 h. When the etching time was changed from 10 to 17 min, the thicknesses of Ti templates decreased from 75.3 μm to 14.8 μm, depending on the etching method. After etching process, the TiO2 nanotube arrays were fabricated as the photoelectrode of DSSCs by electrochemical process, in which the Ti as anode and platinum (Pt as cathode. The electrolyte solution included C2H4(OH2, NH4F, and deionized water. After annealing the grown TiO2 nanotube arrays at 450°C for 3 h, we would show that the etching process had large effect on the structure and transmittance ratio of the TiO2 nanotube arrays.

  4. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  5. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching.

    Science.gov (United States)

    Zhan, Zhan; Li, Wei; Yu, Lingke; Wang, Lingyun; Sun, Daoheng

    2017-02-10

    In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  6. N2 plasma etching processes of microscopic single crystals of cubic boron nitride

    Science.gov (United States)

    Tamura, Takahiro; Takami, Takuya; Yanase, Takashi; Nagahama, Taro; Shimada, Toshihiro

    2017-06-01

    We studied the N2 plasma etching of cubic boron nitride (cBN). We have developed experimental techniques for handling 200-µm-size single crystals for the preparation of surfaces with arbitrary crystal indexes, plasma processes, and surface analyses. We successfully prepared smooth surfaces of cBN with roughness smaller than 10 nm and found that the etching behavior was strongly influenced by the surface indexes. The morphology of the etched surfaces can be explained by the chemical stability of (111)B surfaces.

  7. Chemical tagging in the SDSS-III/APOGEE survey: new identifications of halo stars with globular cluster origins

    CERN Document Server

    Martell, Sarah; Lucatello, Sara; Schiavon, Ricardo; Meszaros, Szabolcs; Prieto, Carlos Allende; Hernandez, Anibal Garcia; Beers, Tim; Nidever, David

    2016-01-01

    We present new identifications of five red giant stars in the Galactic halo with chemical abundance patterns that indicate they originally formed in globular clusters. Using data from the Apache Point Observatory Galactic Evolution Experiment (APOGEE) Survey available through Sloan Digital Sky Survey Data Release 12 (DR12), we first identify likely halo giants, and then search those for the well-known chemical tags associated with globular clusters, specifically enrichment in nitrogen and aluminum. We find that 2% of the halo giants in our sample have this chemical signature, in agreement with previous results. Following the interpretation in our previous work on this topic, this would imply that at least 13% of halo stars originally formed in globular clusters. Recent developments in the theoretical understanding of globular cluster formation raise questions about that interpretation, and we concede the possibility that these migrants represent a small fraction of the halo field. There are roughly as many st...

  8. Survey of marine natural product structure revisions: a synergy of spectroscopy and chemical synthesis.

    Science.gov (United States)

    Suyama, Takashi L; Gerwick, William H; McPhail, Kerry L

    2011-11-15

    The structural assignment of new natural product molecules supports research in a multitude of disciplines that may lead to new therapeutic agents and or new understanding of disease biology. However, reports of numerous structural revisions, even of recently elucidated natural products, inspired the present survey of techniques used in structural misassignments and subsequent revisions in the context of constitutional or configurational errors. Given the comparatively recent development of marine natural products chemistry, coincident with modern spectroscopy, it is of interest to consider the relative roles of spectroscopy and chemical synthesis in the structure elucidation and revision of those marine natural products that were initially misassigned. Thus, a tabulated review of all marine natural product structural revisions from 2005 to 2010 is organized according to structural motif revised. Misassignments of constitution are more frequent than perhaps anticipated by reliance on HMBC and other advanced NMR experiments, especially when considering the full complement of all natural products. However, these techniques also feature prominently in structural revisions, specifically of marine natural products. Nevertheless, as is the case for revision of relative and absolute configuration, total synthesis is a proven partner for marine, as well as terrestrial, natural products structure elucidation. It also becomes apparent that considerable 'detective work' remains in structure elucidation, in spite of the spectacular advances in spectroscopic techniques.

  9. Conceptual hydrogeological model of volcanic Easter Island (Chile) after chemical and isotopic surveys

    Science.gov (United States)

    Herrera, Christian; Custodio, Emilio

    2008-11-01

    Most human activities and hydrogeological information on small young volcanic islands are near the coastal area. There are almost no hydrological data from inland areas, where permanent springs and/or boreholes may be rare or nonexistent. A major concern is the excessive salinity of near-the-coast wells. Obtaining a conceptual hydrogeological model is crucial for groundwater resources development and management. Surveys of water seepages and rain for chemical and environmental isotope contents may provide information on the whole island groundwater flow conditions, in spite of remaining geological and hydrogeological uncertainties. New data from Easter Island (Isla de Pascua), in the Pacific Ocean, are considered. Whether Easter Island has a central low permeability volcanic “core” sustaining an elevated water table remains unknown. Average recharge is estimated at 300-400 mm/year, with a low salinity of 15-50 mg/L Cl. There is an apron of highly permeable volcanics that extends to the coast. The salinity of near-the-coast wells, >1,000 mg/L Cl, is marine in origin. This is the result of a thick mixing zone of island groundwater and encroached seawater, locally enhanced by upconings below pumping wells. This conceptual model explains what is observed, in the absence of inland boreholes and springs.

  10. Controlled MoS₂ layer etching using CF₄ plasma.

    Science.gov (United States)

    Jeon, Min Hwan; Ahn, Chisung; Kim, HyeongU; Kim, Kyong Nam; LiN, Tai Zhe; Qin, Hongyi; Kim, Yeongseok; Lee, Sehan; Kim, Taesung; Yeom, Geun Young

    2015-09-04

    A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS2 was etched by exposure to a CF4 plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS2 layers could be controlled by exposure to the CF4 plasma for a certain processing time. However, XPS data showed that exposure to CF4 plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS2 surface. After exposure to a H2S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS2 surface could be effectively removed.

  11. Micro-Etched Platforms for Thermal Inactivation of Bacillus Anthracis and Bacillus Thuringiensis Spores

    Science.gov (United States)

    2008-03-01

    furnace. A silicon nitride base provided a uniformly heated surface which ensured a uniform temperature exposure for the entire platform surface ...holding spores was wet chemical etching. This procedure entailed several steps in order to prepare the glass surface to be etched. Cleanliness of the...inspected by light microscopy at multiple intervals for surface cleanliness . 40 Figure 17. 400x magnification of Cover slip after the surface has

  12. Survey on methodologies in the risk assessment of chemical exposures in emergency response situations in Europe

    DEFF Research Database (Denmark)

    Heinälä, Milla; Gundert-Remy, Ursula; Wood, Maureen Heraty

    2013-01-01

    A scientifically sound assessment of the risk to human health resulting from acute chemical releases is the cornerstone for chemical incident prevention, preparedness and response. Although the general methodology to identify acute toxicity of chemicals has not substantially changed in the last....../corrosive chemicals will remain serious risks also in future the development of plausible scenarios for potential emerging risks is also needed. This includes risks from new mixtures and chemicals (e.g. nanoparticles)....

  13. Laser etching of austenitic stainless steels for micro-structural evaluation

    Science.gov (United States)

    Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

    2015-06-01

    Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

  14. Nonhomogeneous surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air

    Science.gov (United States)

    Wang, Tao; Yang, Bin; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng; Liu, Jingquan

    2016-10-01

    Surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air were investigated. The morphologies and chemical compositions of the etched surface were analyzed by optical microscopy, SEM, EDS, XPS and ATR-FTIR. The microscopy and SEM images showed the etched surface was nonhomogeneous with six discernable ring patterns from the center to the outside domain, which were composed of (I) a central region; (II) an effective etching region, where almost all of the parylene-C film was removed by the plasma jet with only a little residual parylene-C being functionalized with carboxyl groups (Cdbnd O, Osbnd Cdbnd O-); (III) an inner etching boundary; (IV) a middle etching region, where the film surface was smooth and partially removed; (V) an outer etching boundary, where the surface was decorated with clusters of debris, and (VI) a pristine parylene-C film region. The analysis of the different morphologies and chemical compositions illustrated the different localized etching process in the distinct regions. Besides, the influence of O2 flow rate on the surface properties of the etched parylene-C film was also investigated. Higher volume of O2 tended to weaken the nonhomogeneous characteristics of the etched surface and improve the etched surface quality.

  15. CHESS, Chemical Herschel surveys of star forming regions:Peering into the protostellar shock L1157-B1

    CERN Document Server

    Lefloch, B; Codella, C; Melnick, G; Cernicharo, J; Caux, E; Benedettini, M; Boogert, A; Caselli, P; Ceccarelli, C; Gueth, F; Hily-Blant, P; Lorenzani, A; Neufeld, D; Nisini, B; Pacheco, S; Pagani, L; Pardo, J R; Parise, B; Salez, M; Schuster, K; Viti, S; Bacmann, A; Baudry, A; Bell, T; Bergin, E A; Blake, G; Bottinelli, S; Castets, A; Comito, C; Coutens, A; Crimier, N; Dominik, C; Demyk, K; Encrenaz, P; Falgarone, E; Fuente, A; Gerin, M; Goldsmith, P; Helmich, F; Hennebelle, P; Henning, T; Herbst, E; Jacq, T; Kahane, C; Kama, M; Klotz, A; Langer, W; Lis, D; Lord, S; Maret, S; Pearson, J; Phillips, T; Saraceno, P; Schilke, P; Tielens, X; van der Tak, F; van der Wiel, M; Vastel, C; Wakelam, V; Walters, A; Wyrowski, F; Yorke, H; Bachiller, R; Borys, C; De Lange, G; Delorme, Y; Kramer, C; Larsson, B; Lai, R; Maiwald, F W; Martin-Pintado, J; Mehdi, I; Ossenkopf, V; Siegel, P; Stutzki, J; Wunsch, J H

    2010-01-01

    The outflow driven by the low-mass class 0 protostar L1157 is the prototype of the so-called chemically active outflows. The bright bowshock B1 in the southern outflow lobe is a privileged testbed of magneto-hydrodynamical (MHD) shock models, for which dynamical and chemical processes are strongly interdependent. We present the first results of the unbiased spectral survey of the L1157-B1 bowshock, obtained in the framework of the key program "Chemical Herschel Surveys of Star Forming Regions" (CHESS). The main aim is to trace the warm and chemically enriched gas and to infer the excitation conditions in the shock region. The CO 5-4 and H2O lines have been detected at high-spectral resolution in the unbiased spectral survey of the HIFI-Band 1b spectral window (555-636 GHz), presented by Codella et al. in this volume. Complementary ground-based observations in the submm window help establish the origin of the emission detected in the main-beam of HIFI, and the physical conditions in the shock.}{Both lines exhi...

  16. SF6 plasma etching of silicon nanocrystals.

    Science.gov (United States)

    Liptak, R W; Devetter, B; Thomas, J H; Kortshagen, U; Campbell, S A

    2009-01-21

    An SF(6)-based plasma has been employed to perform in-flight etching of silicon nanocrystals (Si-NCs) after they were synthesized in an SiH(4)-based plasma. The photoluminescence of the Si-NCs blue-shifts after etching, indicating an etching-induced size reduction of the Si-NCs. It is shown that both the SF(6) plasma power and the flow rate can be utilized to control the etch rate (and thus the size reduction) of the Si-NCs. The SF(6) etched Si-NCs show only low concentrations of residual impurities other than fluorine. Quantum yields as high as 50% have been observed from these SF(6) etched Si-NCs despite oxidation.

  17. Etching of glass microchips with supercritical water.

    Science.gov (United States)

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-07

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  18. Selective etching of silicon carbide films

    Science.gov (United States)

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  19. AI AND SAR APPROACHES FOR PREDICTING CHEMICAL CARCINOGENICITY: SURVEY AND STATUS REPORT

    Science.gov (United States)

    A wide variety of artificial intelligence (AI) and structure-activity relationship (SAR approaches have been applied to tackling the general problem of predicting rodent chemical carcinogenicity. Given the diversity of chemical structures and mechanisms relative to this endpoin...

  20. Survey of knowledge of hazards of chemicals potentially associated with the advanced isotope separation processes

    Energy Technology Data Exchange (ETDEWEB)

    Chester, R.O.; Kirkscey, K.A.; Randolph, M.L.

    1979-09-01

    Hazards of chemical potentially associated with the advanced isotope separation processes are estimated based on open literature references. The tentative quantity of each chemical associated with the processes and the toxicity of the chemical are used to estimate this hazard. The chemicals thus estimated to be the most potentially hazardous to health are fluorine, nitric acid, uranium metal, uranium hexafluoride, and uranium dust. The estimated next most hazardous chemicals are bromine, hydrobromic acid, hydrochloric acid, and hydrofluoric acid. For each of these chemicals and for a number of other process-associated chemicals the following information is presented: (1) any applicable standards, recommended standards and their basis; (2) a brief discussion to toxic effects including short exposure tolerance, atmospheric concentration immediately hazardous to life, evaluation of exposures, recommended control procedures, chemical properties, and a list of any toxicology reviews; and (3) recommendations for future research.

  1. AI AND SAR APPROACHES FOR PREDICTING CHEMICAL CARCINOGENICITY: SURVEY AND STATUS REPORT

    Science.gov (United States)

    A wide variety of artificial intelligence (AI) and structure-activity relationship (SAR approaches have been applied to tackling the general problem of predicting rodent chemical carcinogenicity. Given the diversity of chemical structures and mechanisms relative to this endpoin...

  2. Etching.

    Science.gov (United States)

    1980-09-01

    4U c Z . CC 0.0 V 0-01w.0 OCMCC.Ca 0 II 4- 00 La-1 e - .- 0 04’ . £0 tO4 -u 41 ’ Dato C 5-4-00LLi1 c-1 C- - E-1 4-C0 V) -OU1 I~ rC ŔE 0 *z 0 LW 04 c...Z&.. 4.-c o x *C L )P0 A0 0 a54. U * 0 3 i;- L )I.. l C C -44.0 0 2 o; c 0. ama a- .u OE Voz 0 UL 0f ja - .a r DC L _j4 5c .,R r- C *.-* 0 - )W- . 0

  3. Black Germanium fabricated by reactive ion etching

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  4. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  5. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  6. Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays

    Science.gov (United States)

    Scheeler, Sebastian P.; Ullrich, Simon; Kudera, Stefan; Pacholski, Claudia

    2012-08-01

    A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in HF solution containing H2O2. The quality of the pattern transfer depended on the chosen preparation conditions for the gold nanoparticle etching mask. The influence of the Si surface properties was investigated by using either hydrophilic or hydrophobic Si substrates resulting from piranha solution or HF treatment, respectively. The polymer-coated gold nanoparticles had to be thermally treated in order to provide a direct contact at the metal/Si interface which is required for the following metal-assisted etching. Plasma treatment as well as flame annealing was successfully applied. The best results were obtained for Si substrates which were flame annealed in order to remove the polymer matrix - independent of the substrate surface properties prior to spin-coating (hydrophilic or hydrophobic). The presented method opens up new resources for the fabrication of porous silicon by metal-assisted etching. Here, a vast variety of metal nanoparticles accessible by well-established wet-chemical synthesis can be employed for the fabrication of the etching masks.

  7. Localized etching of polymer films using an atmospheric pressure air microplasma jet

    Science.gov (United States)

    Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

    2015-01-01

    A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min-1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ.

  8. Optical Characterization of Plasma Generated in a Commercial Grade Plasma Etching System

    Science.gov (United States)

    Hardy, Ashley; Drake, Dereth

    2015-11-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academics use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  9. Level set simulations of the anisotropic wet etching process for device fabrication in nanotechnologies

    Directory of Open Access Journals (Sweden)

    Rađenović Branislav

    2010-01-01

    Full Text Available Chemical etching is employed as micromachining manufacturing process to produce micron-size components. As a semiconductor wafer is extremely expensive due to many processing steps involved in the making thereof, the need to critically control the etching end point in an etching process is highly desirable. It was found that not only the etchant and temperature determine the exact anisotropy of etched silicon. The angle between the silicon surface and the mask was also shown to play an important role. In this paper, angular dependence of the etching rate is calculated on the base of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal <100>, <110>, <111> directions in KOH solutions. The calculations are performed using an extension of the sparse field method for solving three dimensional (3D level set equations that describe the morphological surface evolution during etching process. The analysis of the obtained results confirm that regardless of the initial shape the profile evolution ends with the crystal form composed of the fastest etching planes, {110} in our model.

  10. Fountain pen nanochemistry: Atomic force control of chrome etching

    Science.gov (United States)

    Lewis, Aaron; Kheifetz, Yuri; Shambrodt, Efim; Radko, Anna; Khatchatryan, Edward; Sukenik, Chaim

    1999-10-01

    In this report we demonstrate a general method for affecting chemical reactions with a high degree of spatial control that has potentially wide applicability in science and technology. Our technique is based on complexing the delivery of liquid or gaseous materials through a cantilevered micropipette with an atomic force microscope that is totally integrated into a conventional optical microscope. Controlled etching of chrome is demonstrated without detectable effects on the underlying glass substrate. This simple combination allows for the nanometric spatial control of the whole world of chemical reactions in defined regions of surfaces. Applications of the technique in critical areas such as mask repair are likely.

  11. The Effect of HF/NH4F Etching on the Morphology of Surface Fractures on Fused Silica

    Energy Technology Data Exchange (ETDEWEB)

    Wong, L; Suratwala, T; Feit, M D; Miller, P E; Steele, R A

    2008-04-03

    The effects of HF/NH{sub 4}F, wet chemical etching on the morphology of individual surface fractures (indentations, scratches) and of an ensemble of surface fractures (ground surfaces) on fused silica glass has been characterized. For the individual surface fractures, a series of static or dynamic (sliding) Vickers and Brinnell indenters were used to create radial, lateral, Hertzian cone and trailing indentation fractures on a set of polished fused silica substrates which were subsequently etched. After short etch times, the visibility of both surface and subsurface cracks is significantly enhanced when observed by optical microscopy. This is attributed to the removal of the polishing-induced Bielby layer and the increased width of the cracks following etching allowing for greater optical scatter at the fracture interface. The removal of material during etching was found to be isotropic except in areas where the etchant has difficulty penetrating or in areas that exhibit significant plastic deformation/densification. Isolated fractures continue to etch, but will never be completely removed since the bottom and top of the crack both etch at the same rate. The etching behavior of ensembles of closely spaced cracks, such as those produced during grinding, has also been characterized. This was done using a second set of fused silica samples that were ground using either fixed or loose abrasives. The resulting samples were etched and both the etch rate and the morphology of the surfaces were monitored as a function of time. Etching results in the formation of a series of open cracks or cusps, each corresponding to the individual fractures originally on the surface of the substrate. During extended etching, the individual cusps coalesce with one another, providing a means of reducing the depth of subsurface damage and the peak-to-valley roughness. In addition, the material removal rate of the ground surfaces was found to scale with the surface area of the cracks as a

  12. A Comparative Evaluation of the Efficacy of Etching by the Total Etch and Self-etch Dentin Bonding Systems in the Primary Teeth: An in vitro Study

    Science.gov (United States)

    Chaugule, Vishwas; Katge, Farhin; Poojari, Manohar; Pujari, Prashant; Pammi, Thejokrishna

    2015-01-01

    ABSTRACT Objective: Early childhood caries is now affecting the children in dangerous proportions. There is a wide spread loss of the tooth material irrespective of the type of the carious lesion. Restoration of such lesions with a strong permanent bond between the dental tissues and the restorative dental materials would be a highly desirable requisite. Ultramorphological characterizations show that the interfacial morphology and the chemical characterization of the bonding systems appear to be strongly associated with each other and, therefore, observing and understanding the interfacial phenomenon and its quality would be of great importance in the selection of a dental adhesive for its use in pediatric restorative dentistry. Study design: Human primary molars, which were indicated for extraction, for an array of reasons like caries, normal exfoliation, pathological root resorption, over-retained and serial extraction, were collected for the study purpose. Total number of teeth was then equally distributed into two subgroups, each namely A1 (Prime and Bond NT) and A2 (Xeno III). Results: The type of etching pattern that was observed in group A1 (Prime and Bond NT) of Silverstone’s type II compared to the Silverstone’s type III observed in group A2 (Xeno III). Conclusion: Results of this study indicate that the use of an etchant separately followed by the application of the bonding system–Prime and Bond NT–would provide a better quality of adhesion thus improving the quality and longevity of the restoration done within the limits of enamel in primary dentition. How to cite this article: Mithiborwala SH, Chaugule V, Katge F, Poojari M, Pujari P, Pammi T. A Comparative Evaluation of the Efficacy of Etching by the Total Etch and Self-etch Dentin Bonding Systems in the Primary Teeth: An in vitro Study. Int J Clin Pediatr Dent 2015;8(1):30-36. PMID:26124578

  13. Aerosol chemistry in Titan's ionosphere: simultaneous growth and etching processes

    Science.gov (United States)

    Carrasco, Nathalie; Cernogora, Guy; Jomard, François; Etcheberry, Arnaud; Vigneron, Jackie

    2016-10-01

    Since the Cassini-CAPS measurements, organic aerosols are known to be present and formed at high altitudes in the diluted and partially ionized medium that is Titan's ionosphere [1]. This unexpected chemistry can be further investigated in the laboratory with plasma experiments simulating the complex ion-neutral chemistry starting from N2-CH4 [2]. Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan's atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan's atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan's atmosphere.The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions is explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes [3]. The impact for our understanding of Titan's aerosols chemical composition is important. Our study shows that chemical growth and etching process are simultaneously at stake in Titan's ionosphere. The more the aerosols stay in the ionosphere, the more graphitized they get through etching process. In order to infer Titan's aerosols composition, our work highlights a need for constraints on the residence time of aerosols in Titan's ionosphere. [1] Waite et al. (2009) Science , 316, p. 870[2] Szopa et al. (2006) PSS, 54, p. 394[3] Carrasco et al. (2016) PSS, 128, p. 52

  14. Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching

    Directory of Open Access Journals (Sweden)

    Yunata Ersyzario Edo

    2015-01-01

    Full Text Available Diamond-Like Carbon (DLC and Chemical Vapor Deposition (CVD-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS. Micro-texturing into these hard coated molds and dies provides a productive tool to duplicate the original mother micro-patterns onto various work materials and to construct any tailored micro-textures for sensors and actuators. In the present paper, the high density oxygen plasma etching method is utilized to make micro-line and micro-groove patterns onto the DLC and diamond coatings. Our developing oxygen plasma etching system is introduced together with characterization on the plasma state during etching. In this quantitative plasma diagnosis, both the population of activated species and the electron and ion densities are identified through the emissive light spectroscopy and the Langmuir probe method. In addition, the on-line monitoring of the plasmas helps to describe the etching process. DLC coated WC (Co specimen is first employed to describe the etching mechanism by the present method. Chemical Vapor Deposition (CVD diamond coated WC (Co is also employed to demonstrate the reliable capacity of the present high density oxygen plasma etching. This oxygen plasma etching performance is discussed by comparison of the etching rates.

  15. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    OpenAIRE

    SABATINI, Camila

    2013-01-01

    Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS) of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II) and a one-step self-etch adhesive (BeautiBond) were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned t...

  16. Anisotropic textured silicon obtained by stain-etching at low etching rates

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-DIaz, B [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Guerrero-Lemus, R [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Marrero, N [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-RodrIguez, C [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Ben-Hander, F A [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain); MartInez-Duart, J M [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-02-21

    The structure, luminescence and etching kinetics for porous silicon stain-etched at different temperatures are studied. The results reveal that for temperatures below 10 deg. C and for short etching times, a novel anisotropic structure based on surface roughness preferentially oriented in the (100) direction is observed. At temperatures higher than 10 deg. C or large etching times, typical macropores and mesopores with non-preferential pore wall orientation are detected. The luminescence spectra of the samples with preferential surface roughness orientation are red-shifted with respect to the samples with typical isotropic orientation. The results are interpreted in terms of average etching rates and pore growth.

  17. Note: electrochemical etching of sharp iridium tips.

    Science.gov (United States)

    Lalanne, Jean-Benoît; Paul, William; Oliver, David; Grütter, Peter H

    2011-11-01

    We describe an etching procedure for the production of sharp iridium tips with apex radii of 15-70 nm, as determined by scanning electron microscopy, field ion microscopy, and field emission measurements. A coarse electrochemical etch followed by zone electropolishing is performed in a relatively harmless calcium chloride solution with high success rate.

  18. Survey of transportation of liquid bulk chemicals in the Baltic Sea

    Energy Technology Data Exchange (ETDEWEB)

    Posti, A.; Hakkinen, J.

    2012-07-01

    This study is made as a part of the Chembaltic (Risks of Maritime Transportation of Chemicals in Baltic Sea) project which gathers information on the chemicals transported in the Baltic Sea. The purpose of this study is to provide an overview of handling volumes of liquid bulk chemicals (including liquefied gases) in the Baltic Sea ports and to find out what the most transported liquid bulk chemicals in the Baltic Sea are. Oil and oil products are also viewed in this study but only in a general level. Oils and oil products may also include chemical-related substances (e.g. certain bio-fuels which belong to MARPOL annex II category) in some cargo statistics. Chemicals in packaged form are excluded from the study. Most of the facts about the transport volumes of chemicals presented in this study are based on secondary written sources of Scandinavian, Russian, Baltic and international origin. Furthermore, statistical sources, academic journals, periodicals, newspapers and in later years also different homepages on the Internet have been used as sources of information. Chemical handling volumes in Finnish ports were examined in more detail by using a nationwide vessel traffic system called PortNet. Many previous studies have shown that the Baltic Sea ports are annually handling more than 11 million tonnes of liquid chemicals transported in bulk. Based on this study, it appears that the number may be even higher. The liquid bulk chemicals account for approximately 4 % of the total amount of liquid bulk cargoes handled in the Baltic Sea ports. Most of the liquid bulk chemicals are handled in Finnish and Swedish ports and their proportion of all liquid chemicals handled in the Baltic Sea is altogether over 50 %. The most handled chemicals in the Baltic Sea ports are methanol, sodium hydroxide solution, ammonia, sulphuric and phosphoric acid, pentanes, aromatic free solvents, xylenes, methyl tert-butyl ether (MTBE) and ethanol and ethanol solutions. All of these chemicals

  19. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  20. Applications of total-etch adhesive bonding.

    Science.gov (United States)

    Strassler, Howard E

    2003-06-01

    The concept of total-etch adhesion for enamel and dentin is well accepted. Although new techniques with self-etching adhesives have been introduced, there needs to be more reported clinical trials before making a complete switch to these systems. Currently, the only adhesive systems with long-term data to support confidence and success with their clinical use are total-etch systems. Applications for using a total-etch adhesive bonding technique include sealants, orthodontic brackets, anterior composite resins, posterior composite resins, bonded dental silver amalgam, resin cementation with posts, all-metal, porcelain-metal, composite resin, and ceramic restorations, splinting, core foundations, and conservative treatment of the worn dentition. This article will review the concepts for clinical success with total-etch adhesion for a wide range of clinical applications.

  1. CHEMICALS

    CERN Document Server

    Medical Service

    2002-01-01

    It is reminded that all persons who use chemicals must inform CERN's Chemistry Service (TIS-GS-GC) and the CERN Medical Service (TIS-ME). Information concerning their toxicity or other hazards as well as the necessary individual and collective protection measures will be provided by these two services. Users must be in possession of a material safety data sheet (MSDS) for each chemical used. These can be obtained by one of several means : the manufacturer of the chemical (legally obliged to supply an MSDS for each chemical delivered) ; CERN's Chemistry Service of the General Safety Group of TIS ; for chemicals and gases available in the CERN Stores the MSDS has been made available via EDH either in pdf format or else via a link to the supplier's web site. Training courses in chemical safety are available for registration via HR-TD. CERN Medical Service : TIS-ME :73186 or service.medical@cern.ch Chemistry Service : TIS-GS-GC : 78546

  2. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    Directory of Open Access Journals (Sweden)

    Sabine Geerts

    2012-01-01

    interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1 and 2-step (ADSE Self-Etch adhesives.

  3. Downstream oxygen etching of low dielectric polymers using a microwave plasma

    Science.gov (United States)

    Callahan, Russell Rosaire Austin

    As dictated by the International Technology Roadmap for Semiconductors, there is an immediate need to develop low dielectric materials for use in metalization schemes in integrated circuits. Low dielectric materials are needed in order to reduce resistance-capacitance time delays, cross-talk and power. This dissertation is focused on studying the etching characteristics of a family of low dielectric polymers, the parylenes. Three types of parylene are studied: parylene-N, parylene-C, and AF4. Parylene films on silicon substrates were etched in a downstream microwave oxygen plasma system. The goal was to characterize the chemical reactions that occurred on the parylene in an oxygen radical atmosphere. First, the effects of pressure and temperature on the etch characteristics of parylene-N were studied. X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy analyses were performed on the parylene films pre- and post-etch. It was determined that hydrogen abstraction and carbonyl formation are key steps during the etch process. Next, a model was generated to describe the reactive species concentrations throughout the reactor volume, including the generation of oxygen radicals in the plasma cavity, their transport to the parylene surface, and their reaction with the parylene. The predicted results were compared to experimental etch data. Good agreement between the model and experimental data was achieved when a model consisting of data from Bell, the Joint Institute for Laboratory Astrophysics and cross-sections published by Cosby and an overall reaction order of 0.5 is compared. Other models included cross-sections published by Phelps and Lieberman. In order to further understand the etching process, the two other parylenes, parylene-C and AF-4, were etched and analyzed. The etching characteristics as a function of temperature are reported. X-ray photoelectron and infrared spectroscopic analysis of these films is also reported. The apparent activation energy

  4. Influence of intermittently etching on quality of CVD diamond thin films

    Institute of Scientific and Technical Information of China (English)

    YANG Kan-cheng; XIA Yi-ben; WANG Lin-jun; LIU Jian-min; SU Qing-feng; XU Run; PENG Hong-yan; SHI Wei-min

    2006-01-01

    A new method,called growing-etching repetitional process based on hot filament chemical vapor deposition,was proposed to improve the quality of diamond film. During the deposition carbon source was intermittently closed letting hydrogen etch the surface of the diamond film from time to time. In order to find whether it is helpful to the films' quality,a series of experiments were done. The results show that the new method can enhance the orientation of the chemical vapor deposition diamond films,reduce the graphite phase and increase the film's surface resistivity.

  5. Quantitative Survey and Structural Classification of Fracking Chemicals Reported in Unconventional Gas Exploitation

    Science.gov (United States)

    Elsner, Martin; Schreglmann, Kathrin

    2015-04-01

    Few technologies are being discussed in such controversial terms as hydraulic fracturing ("fracking") in the recovery of unconventional gas. Particular concern regards the chemicals that may return to the surface as a result of hydraulic fracturing. These are either "fracking chemicals" - chemicals that are injected together with the fracking fluid to optimize the fracturing performance or geogenic substances which may turn up during gas production, in the so-called produced water originating from the target formation. Knowledge about them is warranted for several reasons. (1) Monitoring. Air emissions are reported to arise from well drilling, the gas itself or condensate tanks. In addition, potential spills and accidents bear the danger of surface and shallow groundwater contaminations. Monitoring strategies are therefore warranted to screen for "indicator" substances of potential impacts. (2) Chemical Analysis. To meet these analytical demands, target substances must be defined so that adequate sampling approaches and analytical methods can be developed. (3) Transformation in the Subsurface. Identification and classification of fracking chemicals (aromatics vs. alcohols vs. acids, esters, etc.) is further important to assess the possibility of subsurface reactions which may potentially generate new, as yet unidentified transformation products. (4) Wastewater Treatment. For the same reason chemical knowledge is important for optimized wastewater treatment strategies. (5) Human and Ecosystem Health. Knowledge of the most frequent fracking chemicals is further essential for risk assessment (environmental behavior, toxicity) (6) Public Discussions. Finally, an overview of reported fracking chemicals can provide unbiased scientific into current public debates and enable critical reviews of Green Chemistry approaches. Presently, however, such information is not readily available. We aim to close this knowledge gap by providing a quantitative overview of chemical

  6. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

    Science.gov (United States)

    Liebes, Yael; Hadad, Binyamin; Ashkenasy, Nurit

    2011-07-01

    The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

  7. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Liebes, Yael; Ashkenasy, Nurit [Department of Materials Engineering, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel); Hadad, Binyamin, E-mail: nurita@bgu.ac.il [The Ilze Kaz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel)

    2011-07-15

    The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

  8. Physical, chemical, net haul, bird surveys, and other observations (BIOMASS data) from the British Antarctic Survey FIBEX and SIBEX Projects from 01 November 1980 to 30 April 1985 (NODC Accession 9400053)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This accession includes observations of physical, chemical, and biomass properties from three field experiments conducted by the British Antarctic Survey: the First...

  9. Etch characteristics of magnetic tunnel junction materials using bias pulsing in the CH4/N2O inductively coupled plasma.

    Science.gov (United States)

    Jeon, Min Hwan; Youn, Ji Youn; Yang, Kyung Chae; Yun, Deok Hyun; Lee, Du Yeong; Shim, Tae Hun; Park, Jea Gun; Yeom, Geun Young

    2014-12-01

    The etch characteristics of magnetic tunneling junction (MTJ) related materials such as CoFeB, MgO, FePt, Ru, and W as hard mask have been investigated as functions of rf pulse biasing, substrate heating, and CH4/N2O gas combination in an inductively coupled plasma system. When CH4/N2O gas ratio was varied, at CH4/N2O gas ratio of 2:1, not only the highest etch rates but also the highest etch selectivity over W could be obtained. By increasing the substrate temperature, the linear increase of both the etch rates of MTJ materials and the etch selectivity over W could be obtained. The use of the rf pulse biasing improved the etch selectivity of the MTJ materials over hard mask such as W further. The surface roughness and residual thickness remaining on the etched surface of the CoFeB were also decreased by using rf pulse biasing and with the decrease of rf duty percentage. The improvement of etch characteristics by substrate heating and rf pulse biasing was possibly related to the formation of more stable and volatile etch compounds and the removal of chemically reacted compounds more easily on the etched CoFeB surface. Highly selective etching of MTJ materials over the hard mask could be obtained by using the rf pulse biasing of 30% of duty ratio and by increasing the substrate temperature to 200 degrees C in the CH4/N2O (2:1) plasmas.

  10. Nanoparticle-based etching of silicon surfaces

    Science.gov (United States)

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  11. Electroless epitaxial etching for semiconductor applications

    Science.gov (United States)

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  12. Catalyst-referred etching of silicon

    Directory of Open Access Journals (Sweden)

    Hideyuki Hara et al

    2007-01-01

    Full Text Available A Si wafer and polysilicon deposited on a Si wafer were planarized using catalyst-referred etching (CARE. Two apparatuses were produced for local etching and for planarization. The local etching apparatus was used to planarize polysilicon and the planarization apparatus was used to planarize Si wafers. Platinum and hydrofluoric acid were used as the catalytic plate and the source of reactive species, respectively. The processed surfaces were observed by optical interferometry, atomic force microscopy (AFM and scanning electron microscopy (SEM. The results indicate that the CARE-processed surface is flat and undamaged.

  13. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Boukezzata, A., E-mail: assiab2006@yahoo.fr [Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers (Algeria); Keffous, A., E-mail: keffousa@yahoo.fr [Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers (Algeria); Cheriet, A.; Belkacem, Y.; Gabouze, N.; Manseri, A. [Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers (Algeria); Nezzal, G. [Houari Boumediene University (USTHB), Chemical Faculty, Algiers (Algeria); Kechouane, M.; Bright, A. [Houari Boumediene University, Physical Faculty, Algiers (Algeria); Guerbous, L. [Algerian Nuclear Research Center (CRNA), Algiers (Algeria); Menari, H. [Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers (Algeria)

    2010-07-01

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K{sub 2}S{sub 2}O{sub 8} solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 M{Omega} cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K{sub 2}S{sub 2}O{sub 8} solution has been proposed.

  14. Anisotropic etching on Si{1 1 0}: experiment and simulation for the formation of microstructures with convex corners

    Science.gov (United States)

    Pal, Prem; Gosalvez, Miguel A.; Sato, Kazuo; Hida, H.; Xing, Yan

    2014-12-01

    We combine experiment, theory and simulation to design and fabricate 3D structures with protected edges and corners on Si{1 1 0} using anisotropic wet chemical etching in 25 wt% tetramethylammonium hydroxide (TMAH) at 71 °C. In order to protect the convex corners formed by and directions, two methods are considered, namely, corner compensation and two-step etching. The mask design methodology for corner compensation is explained for various microstructures whose edges are aligned along different directions. The detailed geometry of each compensation pattern is shown to depend on the desired etch depth. The two-step wet etching process is explored in order to realize improved sharp convex corners. Using the same etchant concentration and temperature, the second etching is carried out after mask inversion from silicon nitride (Si3N4) to silicon dioxide (SiO2), obtained by local oxidation of silicon (LOCOS) followed by nitride etching. Based on the use of the continuous cellular automaton (CCA), the simulation results for both corner undercutting and two-step etching show that the CCA is suitable for the analysis and prediction of anisotropic etching on Si{1 1 0} wafers.

  15. Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Cigang; Deng, Ligang; Holder, Adam; Bailey, Louise R.; Proudfoot, Gary; Thomas, Owain; Gunn, Robert; Cooke, Mike [Oxford Instruments Plasma Technology, Bristol (United Kingdom); Leendertz, Caspar [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut fuer Silizium Photovoltaik, Berlin (Germany); Bergmann, Joachim [Leibniz Institute of Photonic Technology, Jena (Germany)

    2015-01-01

    Au nanoparticles and polystyrene nanospheres were used as mask for plasma etching of indium tin oxide (ITO) layer. By reactive ion etching (RIE) processes, the morphology of polystyrene nanospheres can be tuned through chemical or physical etching, and Au nanoparticle mask can result in ITO nanostructures with larger aspect ratio than nanosphere mask. During inductively coupled plasma (ICP) processes, Au nanoparticle mask was not affected by the thermal effect of plasma, whereas temperature of the substrate was essential to protect nanospheres from the damaging effect of plasma. Physical bombardment in the plasma can also modify the nanospheres. It was observed that under the same process conditions, the ratio of CH{sub 4} and H{sub 2} in the process gas can affect the etching rate of ITO without completely etching the nanospheres. The morphology of ITO nanostructures also depends on process conditions. The resulting ITO nanostructures show lower reflection in a spectral range of 400-1000 nm than c-Si and conventional antireflection layer of SiN{sub x} film. ITO nanostructures obtained after etching (scale bar = 200 nm). (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Effect of post-annealing on the plasma etching of graphene-coated-copper.

    Science.gov (United States)

    Hui, L S; Whiteway, E; Hilke, M; Turak, A

    2014-01-01

    High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resistance to etching under plasma was examined to assess the mechanical robustness of the graphene on the Cu surface, analyzed using optical and Raman microscopies. We found a correlation between the post-annealing time and etching time for the complete removal of graphene from Cu. Etching rates, minimum etch times, and surface appearance were observed to vary depending on the etching plasma (air, oxygen or nitrogen). Oxygen plasmas were found to be the least aggressive, emphasizing the improved adhesion with post-annealing treatments. Our results imply that the etching of graphene on Cu, and hence the adhesion of graphene, can be controlled by proper annealing and choice of plasma gas.

  17. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    Energy Technology Data Exchange (ETDEWEB)

    Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L [Complex Photonic Systems (COPS), MESA Institute for Nanotechnology and Department of Science and Technology, University of Twente, PO Box 217, NL-7500 AE Enschede (Netherlands); Jansen, Henri V [Transducers Science and Technology (TST), MESA Institute for Nanotechnology and Department of Electrical Engineering, Mathematics and Computer Science, University of Twente, PO Box 217, NL-7500 AE Enschede (Netherlands); Setija, Irwan D [ASML Netherlands B V, De Run 6501, NL-5504 DR Veldhoven (Netherlands)], E-mail: l.a.woldering@utwente.nl

    2008-04-09

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF{sub 6}, optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips.

  18. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

    Energy Technology Data Exchange (ETDEWEB)

    Aureau, D., E-mail: damien.aureau@chimie.uvsq.fr [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Chaghi, R.; Gerard, I. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Sik, H.; Fleury, J. [Sagem Defense Sécurité, 72-74, rue de la tour Billy, 95101, Argenteuil Cedex (France); Etcheberry, A. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France)

    2013-07-01

    This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br{sub 2} and H{sub 2}O{sub 2} and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III–V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr–Br{sub 2}:H{sub 2}O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H{sub 3}PO{sub 4}–H{sub 2}O{sub 2}:H{sub 2}O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction.

  19. Electron microscopy analysis of structural changes within white etching areas

    DEFF Research Database (Denmark)

    Diederichs, Annika Martina; Schwedt, A.; Mayer, J.

    2016-01-01

    In the present work, crack networks with white etching areas (WEAs) in cross-sections of bearings were investigated by a complementary use of SEM and TEM with the focus on the use of orientation contrast imaging and electron backscatter diffraction (EBSD). Orientation contrast imaging was used...... observed within WEAs. Using EBSD analysis, evidence was obtained that WEA formation and accompanying crack growth are without relation microstructural features. In addition, an inhomogeneous chemical structure of WEA as a result of carbide dissolution is revealed by analytical investigations....

  20. The CHESS spectral survey of star forming regions : Peering into the protostellar shock L1157-B1. I. Shock chemical complexity

    NARCIS (Netherlands)

    Codella, C.; Lefloch, B.; Ceccarelli, C.; Cernicharo, J.; Caux, E.; Lorenzani, A.; Viti, S.; Hily-Blant, P.; Parise, B.; Maret, S.; Nisini, B.; Caselli, P.; Cabrit, S.; Pagani, L.; Benedettini, M.; Boogert, A.; Gueth, F.; Melnick, G.; Neufeld, D.; Pacheco, S.; Salez, M.; Schuster, K.; Bacmann, A.; Baudry, A.; Bell, T.; Bergin, E. A.; Blake, G.; Bottinelli, S.; Castets, A.; Comito, C.; Coutens, A.; Crimier, N.; Dominik, C.; Demyk, K.; Encrenaz, P.; Falgarone, E.; Fuente, A.; Gerin, M.; Goldsmith, P.; Helmich, F.; Hennebelle, P.; Henning, Th; Herbst, E.; Jacq, T.; Kahane, C.; Kama, M.; Klotz, A.; Langer, W.; Lis, D.; Lord, S.; Pearson, J.; Phillips, T.; Saraceno, P.; Schilke, P.; Tielens, X.; van der Tak, F.; van der Wiel, M.; Vastel, C.; Wakelam, V.; Walters, A.; Wyrowski, F.; Yorke, H.; Borys, C.; Delorme, Y.; Kramer, C.; Larsson, B.; Mehdi, I.; Ossenkopf, V.; Stutzki, J.

    2010-01-01

    We present the first results of the unbiased survey of the L1157-B1 bow shock, obtained with HIFI in the framework of the key program Chemical HErschel Survey of Star forming regions (CHESS). The L1157 outflow is driven by a low-mass Class 0 protostar and is considered the prototype

  1. Hydrolytic stability of self-etch adhesives bonded to dentin.

    Science.gov (United States)

    Inoue, S; Koshiro, K; Yoshida, Y; De Munck, J; Nagakane, K; Suzuki, K; Sano, H; Van Meerbeek, B

    2005-12-01

    Functional monomers chemically interact with hydroxyapatite that remains within submicron hybrid layers produced by mild self-etch adhesives. The functional monomer 10-MDP interacts most intensively with hydroxyapatite, and its calcium salt appeared most hydrolytically stable, as compared with 4-MET and phenyl-P. We investigated the hypothesis that additional chemical interaction of self-etch adhesives improves bond stability. The micro-tensile bond strength (muTBS) of the 10-MDP-based adhesive did not decrease significantly after 100,000 cycles, but did after 50,000 and 30,000 cycles, respectively, for the 4-MET-based and the phenyl-P-based adhesives. Likewise, the interfacial ultrastructure was unchanged after 100,000 thermocycles for the 10-MDP-based adhesive, while that of both the 4-MET- and phenyl-P-based adhesives contained voids and less-defined collagen. The findings of this study support the concept that long-term durability of adhesive-dentin bonds depends on the chemical bonding potential of the functional monomer.

  2. Control technology assessment of hazardous waste disposal operations in chemicals manufacturing: walk-through survey report of Chemical Waste Management, Inc. , Emelle, Alabama

    Energy Technology Data Exchange (ETDEWEB)

    Anastas, M.

    1982-08-01

    A walk through survey was conducted to assess hazardous waste disposal operations at Chemical Waste Management, Incorporated (SIC-4953), Emelle, Alabama in February 1982. Hazardous waste treatment and disposal operations included landfilling, fixation, solar evaporation, and incineration. The incinerator was a liquid injection unit used for combustible liquids containing up to 10 percent chlorine. Polychlorinated biphenyls and other chlorine containing wastes not treated on site were temporarily stored before shipment for at sea incineration. In-situ fixation was carried out on corrosive, acidic, and heavy metal containing liquids. Liquid wastes were removed and eventually pumped into a pit where they were mixed with cement kiln dust. Drum stored wastes intended for landfilling were transported by front end loaders to the site. Heavy equipment operators were protected from exposure to dust by environmental cabs. Air and medical monitoring were performed on landfill, laboratory, and maintenance shop workers. Hard hats, goggles, and safety shoes were required at the landfill. Respirators and other protective equipment and clothing were available. The author concludes that the company management is concerned about the health and safety of the employees. An in depth survey is recommended.

  3. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  4. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  5. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Camila SABATINI

    2013-01-01

    Full Text Available Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II and a one-step self-etch adhesive (BeautiBond were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12 as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100 were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37°C, 100% humidity with a testing machine (Ultra-tester at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of p<0.05. A field emission scanning electron microscope was used for the failure mode analysis. Results Both adhesives evidenced a significant decrease in the dentin SBS with the use of an optional phosphoric acid-etching step (p<0.05. Preliminary phosphoric acid etching yielded significantly higher enamel SBS for FL-Bond II (p<0.05 only, but not for BeautiBond. FL-Bond II applied to un-etched dentin demonstrated the highest mean bond strength (37.7±3.2 MPa and BeautiBond applied to etched dentin showed the lowest mean bond strength (18.3±6.7 MPa among all tested groups (p<0.05. Conclusion The use of a preliminary acid-etching step with 37.5% phosphoric acid had a significant adverse effect on the dentin bond strength of the self-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin.

  6. A survey on the microbiological and chemical composition of buffalo milk in China

    NARCIS (Netherlands)

    Han, B.Z.; Meng, Y.; Li, M.; Yang, Y.; Ren, F.; Zeng, Q.; Nout, M.J.R.

    2007-01-01

    One hundred and twelve samples of raw buffalo milk were collected at four locations in China, and their microbiological and chemical composition was analyzed. Average levels of major components were: fat 7.59% (v/v), crude protein 4.86% (w/w), lactose 4.74% (w/w), total solids 18.44% (w/w), ash 0.85

  7. Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

    Science.gov (United States)

    Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

    2017-10-01

    Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

  8. Design and analysis of questionnaires for survey skills in chemical engineering

    Directory of Open Access Journals (Sweden)

    Susana Lucas

    2011-09-01

    Full Text Available 800x600 Normal 0 21 false false false CA X-NONE X-NONE The new reorganization of university education has involved relevant changes in teaching and learning methodologies in order to help students to learn more effectively and to develop important skills and competences demanded by the professional world. In this sense the new configuration of the degree in Chemical Engineering required the identification of the main general and transferable skills, the implementation of the new teaching and learning strategies necessary to achieve them and, in addition, an evaluation procedure for determining the importance and the degree of development of a student´s skills and competences. In this exercise, two obligatory chemical reactor engineering subjects of the still in effect Chemical Engineering degree were chosen as examples of competence-based learning disciplines. For each one, a significant group of transferable and specific skills were selected to be developed. The identification and selection of skills was made according to the recommendations of the European Federation of Chemical Engineering (EFCE together with the established requirements in the ministerial order for the new Chemical Engineering Degree (Ministerial order CIN/351/2009. In order to check the effectiveness of teaching strategies in helping students to acquire these abilities, specific questionnaires were designed. These tests allowed for the utility of the competences in question to be evaluated in terms of the students´ professional work as future chemical engineering graduates and also facilitated the perception of skill development acquired through the methodology implemented in these subjects. The results of the skill evaluation questionnaires revealed the importance that both university collectives (students and professors give to the development of transferable skills. These skills included the ability to communicate effectively (including in English, to work in

  9. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  10. Dislocation Etching Solutions for Mercury Cadmium Selenide

    Science.gov (United States)

    2014-09-01

    manufacturer’s or trade names does not constitute an official endorsement or approval of the use thereof. Destroy this report when it is no longer...dislocation—thus enabling EPD measurement of Hg1-xCdxSe. 15. SUBJECT TERMS Mercury cadmium selenide, etch pits, dislocations, preferential etching...by the US Army Research Laboratory and was accomplished under Cooperative Agreement # W911NF-12-2-0019. vi

  11. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  12. Survey of renewable chemicals produced from lignocellulosic biomass during ionic liquid pretreatment

    Directory of Open Access Journals (Sweden)

    Varanasi Patanjali

    2013-01-01

    Full Text Available Abstract Background Lignin is often overlooked in the valorization of lignocellulosic biomass, but lignin-based materials and chemicals represent potential value-added products for biorefineries that could significantly improve the economics of a biorefinery. Fluctuating crude oil prices and changing fuel specifications are some of the driving factors to develop new technologies that could be used to convert polymeric lignin into low molecular weight lignin and or monomeric aromatic feedstocks to assist in the displacement of the current products associated with the conversion of a whole barrel of oil. We present an approach to produce these chemicals based on the selective breakdown of lignin during ionic liquid pretreatment. Results The lignin breakdown products generated are found to be dependent on the starting biomass, and significant levels were generated on dissolution at 160°C for 6 hrs. Guaiacol was produced on dissolution of biomass and technical lignins. Vanillin was produced on dissolution of kraft lignin and eucalytpus. Syringol and allyl guaiacol were the major products observed on dissolution of switchgrass and pine, respectively, whereas syringol and allyl syringol were obtained by dissolution of eucalyptus. Furthermore, it was observed that different lignin-derived products could be generated by tuning the process conditions. Conclusions We have developed an ionic liquid based process that depolymerizes lignin and converts the low molecular weight lignin fractions into a variety of renewable chemicals from biomass. The generated chemicals (phenols, guaiacols, syringols, eugenol, catechols, their oxidized products (vanillin, vanillic acid, syringaldehyde and their easily derivatized hydrocarbons (benzene, toluene, xylene, styrene, biphenyls and cyclohexane already have relatively high market value as commodity and specialty chemicals, green building materials, nylons, and resins.

  13. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    Dry etching is a collective term used for controlled material removal by means of plasma generated ions. Dry etching includes several techniques, with reactive ion etching as one of the most used of its many derivatives. In this work inductively coupled plasma reactive ion etching has been applied...... beam etching in a boron trichloride plasma. The etch rates of sapphire in such a plasma can be up to a hundred times faster than rates in ion beam etching. The anisotropy of the etch can be controlled by changing the plasma conditions and fabrication of sloped sidewalls can be achieved. Reactive ion...... etching of polymers can be used for several purposes, such as polymer removal, surface properties alternation, or polymer structuring. For material removal any polymer can be etched in an oxygen plasma, including all the polymers used in this project, which include, SU-8, TOPAS®, PLLA, PCL, and PMMA...

  14. Fabrication of quantum wires by in-situ ion etching and MBE overgrowth

    Science.gov (United States)

    Heyn, Ch; Klein, C.; Kramp, S.; Beyer, S.; Günther, S.; Heitmann, D.; Hansen, W.

    2001-07-01

    We fabricate GaAs quantum wires (QW) that are completely embedded in epitaxial material. Here we report about an in-vacuo fabrication process, in which an ex-situ pre-patterned GaAlAs/GaAs heterostructure is in-situ etched and subsequently transferred under ultra high vacuum conditions into the growth chamber for epitaxial overgrowth. The in-situ etching step involves a chemical assisted ion beam etching with subsequent chemical gas etching. The aim of our investigations is to optimize the in-vacuo process for the reduction of interface states between the etched and overgrown material. We have studied structural properties of such processed samples with cross-sectional scanning-electron microscopy and transmission-electron microscopy. The optical and electronic properties of overgrown QW are investigated with magneto-transport measurements and far-infrared transmission spectroscopy. Overgrown QW show in comparison to conventional QW without overgrowth clearly increased carrier densities and a reduced depletion zone at the QW side-walls. These results indicate the successful reduction of surface states and establish the potential of the suggested in-situ technique for the fabrication of quantum structures.

  15. SURVEY

    DEFF Research Database (Denmark)

    SURVEY er en udbredt metode og benyttes inden for bl.a. samfundsvidenskab, humaniora, psykologi og sundhedsforskning. Også uden for forskningsverdenen er der mange organisationer som f.eks. konsulentfirmaer og offentlige institutioner samt marketingsafdelinger i private virksomheder, der arbejder...... med surveys. Denne bog gennemgår alle surveyarbejdets faser og giver en praktisk indføring i: • design af undersøgelsen og udvælgelse af stikprøver, • formulering af spørgeskemaer samt indsamling og kodning af data, • metoder til at analysere resultaterne...

  16. Integrated Light Chemical Abundance Analyses of 7 M31 Outer Halo Globular Clusters from the Pan-Andromeda Archaeological Survey

    Science.gov (United States)

    Sakari, Charli; Venn, Kim; Mackey, Dougal; Shetrone, Matthew D.; Dotter, Aaron L.; Wallerstein, George

    2015-01-01

    Detailed chemical abundances of globular clusters provide insight into the formation and evolution of galaxies and their globular cluster systems. This talk presents detailed chemical abundances for seven M31 outer halo globular clusters (with projected radii greater than 30 kpc), as derived from high resolution integrated light spectra. Five of these clusters were recently discovered in the Pan-Andromeda Archaeological Survey (PAndAS). The integrated abundances show that 4 of these clusters are metal-poor ([Fe/H] < -1.5) while the other 3 are more metal-rich. The most metal-poor globular clusters are α-enhanced, though 3 of the 4 are possibly less α-enhanced than MW stars (at the 1σ level). Other chemical abundance ratios ([Ba/Eu], [Eu/Ca], and [Ni/Fe]) are consistent with origins in low mass dwarf galaxies (similar to Fornax). The most metal-rich cluster ([Fe/H] ~ -1) stands out as being chemically distinct from Milky Way field stars of the same metallicity---its chemical abundance ratios agree best with the stars and clusters in the Large Magellanic Cloud (LMC) and the Sagittarius dwarf spheroidal (Sgr) than with the Milky Way field stars. The other metal-rich clusters, H10 and H23, look similar to the LMC and Milky Way field stars in all abundance ratios. These results indicate that M31's outer halo is being at least partially built up by the accretion of dwarf satellites, in agreement with previous observations.

  17. Comparative Study of Surface Chemical Composition and Oxide Layer Modification upon Oxygen Plasma Cleaning and Piranha Etching on a Novel Low Elastic Modulus Ti25Nb21Hf Alloy

    Science.gov (United States)

    Paredes, Virginia; Salvagni, Emiliano; Rodríguez-Castellón, Enrique; Manero, José María

    2017-08-01

    Metals are widely employed for many biological artificial replacements, and it is known that the quality and the physical/chemical properties of the surface are crucial for the success of the implant. Therefore, control over surface implant materials and their elastic moduli may be crucial to avoid undesired effects. In this study, surface modification upon cleaning and activation of a low elastic modulus Ti alloy (Ti25Hf21Nb) was investigated. Two different methods, oxygen plasma (OP) cleaning and piranha (PI) solution, were studied and compared. Both surface treatments were effective for organic contaminant removal and to increase the Ti-oxide layer thickness rather than other metal-oxides present at the surface, which is beneficial for biocompatibility of the material. Furthermore, both techniques drastically increased hydrophilicity and introduced oxidation and hydroxylation (OH)-functional groups at the surface that may be beneficial for further chemical modifications. However, these treatments did not alter the surface roughness and bulk material properties. The surfaces were fully characterized in terms of surface roughness, wettability, oxide layer composition, and hydroxyl surface density through analytical techniques (interferometry, X-ray photoelectron spectroscopy (XPS), contact angle, and zinc complexation). These findings provide essential information when planning surface modifications for cleanliness, oxide layer thickness, and surface hydroxyl density, as control over these factors is essential for many applications, especially in biomaterials.

  18. Concentration of mycotoxins and chemical composition of corn silage: a farm survey using infrared thermography.

    Science.gov (United States)

    Schmidt, P; Novinski, C O; Junges, D; Almeida, R; de Souza, C M

    2015-09-01

    This work evaluated the chemical composition and mycotoxin incidence in corn silage from 5 Brazilian dairy-producing regions: Castro, in central-eastern Paraná State (n=32); Toledo, in southwestern Paraná (n=20); southeastern Goiás (n=14); southern Minas Gerais (n=23); and western Santa Catarina (n=20). On each dairy farm, an infrared thermography camera was used to identify 3 sampling sites that exhibited the highest temperature, a moderate temperature, and the lowest temperature on the silo face, and 1 sample was collected from each site. The chemical composition and concentrations of mycotoxins were evaluated, including the levels of aflatoxins B1, B2, G1, and G2; zearalenone; ochratoxin A; deoxynivalenol; and fumonisins B1 and B2. The corn silage showed a highly variable chemical composition, containing, on average, 7.1±1.1%, 52.5±5.4%, and 65.2±3.6% crude protein, neutral detergent fiber, and total digestible nutrients, respectively. Mycotoxins were found in more than 91% of the samples, with zearalenone being the most prevalent (72.8%). All samples from the Castro region contained zearalenone at a high average concentration (334±374µg/kg), even in well-preserved silage. The incidence of aflatoxin B1 was low (0.92%). Silage temperature and the presence of mycotoxins were not correlated; similarly, differences were not observed in the concentration or incidence of mycotoxins across silage locations with different temperatures. Infrared thermography is an accurate tool for identifying heat sites, but temperature cannot be used to predict the chemical composition or the incidence of mycotoxins that have been analyzed, within the silage. The pre-harvest phase of the ensiling process is most likely the main source of mycotoxins in silage.

  19. Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond

    Science.gov (United States)

    Dunn, Derren; Sporre, John R.; Deshpande, Vaibhav; Oulmane, Mohamed; Gull, Ronald; Ventzek, Peter; Ranjan, Alok

    2017-03-01

    Increasingly, advanced process nodes such as 7nm (N7) are fundamentally 3D and require stringent control of critical dimensions over high aspect ratio features. Process integration in these nodes requires a deep understanding of complex physical mechanisms to control critical dimensions from lithography through final etch. Polysilicon gate etch processes are critical steps in several device architectures for advanced nodes that rely on self-aligned patterning approaches to gate definition. These processes are required to meet several key metrics: (a) vertical etch profiles over high aspect ratios; (b) clean gate sidewalls free of etch process residue; (c) minimal erosion of liner oxide films protecting key architectural elements such as fins; and (e) residue free corners at gate interfaces with critical device elements. In this study, we explore how hybrid modeling approaches can be used to model a multi-step finFET polysilicon gate etch process. Initial parts of the patterning process through hardmask assembly are modeled using process emulation. Important aspects of gate definition are then modeled using a particle Monte Carlo (PMC) feature scale model that incorporates surface chemical reactions.1 When necessary, species and energy flux inputs to the PMC model are derived from simulations of the etch chamber. The modeled polysilicon gate etch process consists of several steps including a hard mask breakthrough step (BT), main feature etch steps (ME), and over-etch steps (OE) that control gate profiles at the gate fin interface. An additional constraint on this etch flow is that fin spacer oxides are left intact after final profile tuning steps. A natural optimization required from these processes is to maximize vertical gate profiles while minimizing erosion of fin spacer films.2

  20. Selective etching of semicrystalline polymers CF4 gas plasma treatment of poly(ethylene)

    NARCIS (Netherlands)

    Olde riekerink, M.B.; Terlingen, J.G.A.; Terlingen, J.G.A.; Engbers, G.H.M.; Feijen, Jan

    1999-01-01

    A series of poly(ethylene) (PE) films with different degrees of crystallinity was treated with a radio-frequency tetrafluoromethane (CF4) gas plasma (48-49 W, 0.06-0.07 mbar, and continuous vs pulsed treatment). The etching behavior and surface chemical and structural changes of the PE films were

  1. Selective Etching of Semicrystalline Polymers: CF4 Gas Plasma Treatment of Poly(ethylene)

    NARCIS (Netherlands)

    Olde Riekerink, M.B.; Terlingen, J.G.A.; Engbers, G.H.M.; Feijen, J.

    1999-01-01

    A series of poly(ethylene) (PE) films with different degrees of crystallinity was treated with a radio-frequency tetrafluoromethane (CF4) gas plasma (48-49 W, 0.06-0.07 mbar, and continuous vs pulsed treatment). The etching behavior and surface chemical and structural changes of the PE films were st

  2. Survey on bio-chemical complex harmonized with global environment. 3; Kankyo chowagata seibutsu kagaku konbinato ni kansuru chosa. 3

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    A survey was conducted of bio-chemical complex harmonized with the global environment for the purpose of constructing the material production process harmonized with the environment by the process fusion between biological conversion and chemical reaction. Palm oil was taken up as renewable raw material plant resource. The process utilizing bio-chemical reaction advances at normal temperature and pressure and is high in reaction specificity and selectivity. This is a recycling, circulation and environmental harmony type production technology which brings high yield, energy conservation, resource conservation, and low environmental loads. Waste water treatment and production of useful substances from sludge were thought as elementary technology. A possibility was studied of enzyme production by culturing solid waste, and the enzyme was applied to the hydrolysis process. The paper indicated trace components in the palm oil and the extraction method and proposed the production process of new derivatives for adding value to hydrolysate. A study was also made of the overall process flow which integrated these new processes and the material balance. The comprehensive evaluation of this new process was made from the aspect of the product structure, the market, construction cost, economical efficiency, and the environment. 133 refs., 65 figs., 56 tabs.

  3. Chemical Abundances of M-dwarfs from the APOGEE Survey. I. The Exoplanet Hosting Stars Kepler-138 and Kepler-186

    Science.gov (United States)

    Souto, D.; Cunha, K.; García-Hernández, D. A.; Zamora, O.; Allende Prieto, C.; Smith, V. V.; Mahadevan, S.; Blake, C.; Johnson, J. A.; Jönsson, H.; Pinsonneault, M.; Holtzman, J.; Majewski, S. R.; Shetrone, M.; Teske, J.; Nidever, D.; Schiavon, R.; Sobeck, J.; García Pérez, A. E.; Gómez Maqueo Chew, Y.; Stassun, K.

    2017-02-01

    We report the first detailed chemical abundance analysis of the exoplanet-hosting M-dwarf stars Kepler-138 and Kepler-186 from the analysis of high-resolution (R ∼ 22,500) H-band spectra from the SDSS-IV–APOGEE survey. Chemical abundances of 13 elements—C, O, Na, Mg, Al, Si, K, Ca, Ti, V, Cr, Mn, and Fe—are extracted from the APOGEE spectra of these early M-dwarfs via spectrum syntheses computed with an improved line list that takes into account H2O and FeH lines. This paper demonstrates that APOGEE spectra can be analyzed to determine detailed chemical compositions of M-dwarfs. Both exoplanet-hosting M-dwarfs display modest sub-solar metallicities: [Fe/H]Kepler-138 = ‑0.09 ± 0.09 dex and [Fe/H]Kepler-186 = ‑0.08 ± 0.10 dex. The measured metallicities resulting from this high-resolution analysis are found to be higher by ∼0.1–0.2 dex than previous estimates from lower-resolution spectra. The C/O ratios obtained for the two planet-hosting stars are near-solar, with values of 0.55 ± 0.10 for Kepler-138 and 0.52 ± 0.12 for Kepler-186. Kepler-186 exhibits a marginally enhanced [Si/Fe] ratio.

  4. A new generation of self-etching adhesives: comparison with traditional acid etch technique.

    Science.gov (United States)

    Holzmeier, Marcus; Schaubmayr, Martin; Dasch, Walter; Hirschfelder, Ursula

    2008-03-01

    The aim of this study was to determine the shear bond strength (SBS), etching pattern and depth, and debonding performance of several market-leading, self-etching (SE) adhesives primarily used in restorative dentistry (iBond, Clearfil S(3) Bond, Clearfil Protect Bond, AdheSE, XenoIII), two experimental self-etching adhesives (exp. Bond 1, exp. Bond 2) and one experimental self-etching cement (SE Zement) used with and without prior phosphoric acid-etching, and to compare them to an orthodontic self-etching product (Transbond Plus SE Primer) and to traditional acid-etch technique (Transbond XT Primer, phosphoric acid) All adhesives were applied on pumiced and embedded bovine incisors following the manufacturers' instructions. Then one bracket each (coated with Transbond XT composite) was bonded (n = 20). Transbond XT was polymerized for 20 s from the incisal and gingival sides using a halogen device positioned at a constant 5 mm from and a 45 degrees angle to the specimen. The specimens were stored in distilled water for 24 h at 37 degrees C before measuring SBS. The ARI (adhesive remnant index) for all specimens was determined from the sheared-off brackets of each. After conditioning, the surface texture was morphologically evaluated from scanning electron microscope (SEM) images, while the etching depth was determined using a confocal laser-scanning microscope (CLSM). All groups were tested for normal distribution and analyzed by applying ANOVA, Kruskal-Wallis or the t test. In addition, a Bonferroni correction was used. The median values of the SBS tests were: SE Zement 3.0 MPa, SE Zement preceded by phosphoric acid etching 11.2 MPa, experimental bond 1: 7.4 MPa, experimental bond 2: 5.6 MPa, iBond 8.1 MPa, Clearfil S(3) Bond 14.1 MPa, Clearfil Protect Bond 16.6 MPa, Clearfil SE Bond 15.9 MPa, AdheSE 16.0 MPa, XenoIII 16.1 MPa, Transbond SE Primer 20.7 MPa, acid-etching+Transbond XT Primer 21.0 MPa. With the exception of iBond, we observed no significant

  5. Polymerization monitoring in plasma etching systems

    Science.gov (United States)

    Kim, Jinsoo

    1999-11-01

    In plasma etching processes, the polymers used to enhance etch anisotropy and selectivity also deposit on various parts of the reaction chamber. This polymerization on reactor surface not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. This thesis explores the development of a direct in-situ polymerization monitoring sensor to minimize the drifts in plasma etching processes. In addition, polymerization dependencies on basic processing parameters and polymerization effects on etching characteristics have been explored for the first time using a direct in-situ sensor. The polymer buildup process is a strong function of parameters such as power, base pressure, and flow rate, and is also dependent on the reactor materials used, temperature, and the hydrogen/oxygen concentrations present. Experiments performed in an Applied Materials 8300 plasma etcher show a significant increase in polymerization with increased pressure and flow rates and a decrease as a function of power. These experiments provide insight into how the chamber state changes under the different processing recipes used for etching specific material layers and also suggest how the chamber seasoning process can best be carried out. The reactor surface, which serves as both a source and a sink for reactive gas species, not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. The etch rate and selectivity variations for specific silicon dioxide and silicon nitride etching recipes have been explored as a function of the polymer thickness on the reactor walls. The etch rates of nitride and polysilicon decrease dramatically with polymer thickness up to a thickness of 60nm, while the oxide etch rate remains virtually constant due to the polymerization

  6. Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 2: SF6 / O2 Modeling of the chemical processes in the plasma of gaseous mixtures used in the etching of silicon. Part 2: SF6 / O2

    Directory of Open Access Journals (Sweden)

    G. F. Bauerfeldt

    1998-02-01

    Full Text Available In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes and the effect of the parameters' uncertainties were determined. The model was compared with experimental data for the plasma etching of silicon and with the calculated results for the CF4 / O2 system. In both systems the main etching agent is the fluorine atom and the concentration of the major species depends on the composition of the mixture. The etching rate is greater for SF6 / O2.

  7. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  8. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  9. Effect of pre-etching enamel on fatigue of self-etch adhesive bonds

    NARCIS (Netherlands)

    Erickson, R.L.; de Gee, A.J.; Feilzer, A.J.

    2008-01-01

    Objective. A previous study found that the shear bond strength (SBS) to bovine enamel for the self-etching adhesive Adper Prompt-L-Pop (PLP) was 75% of that found with the etch-and-rinse material SingleBond, while the comparative value for the shear fatigue limit (SFL) was only 58% at 10(5) load

  10. Anisotropic etching of monocrystalline silicon under subcritical conditions

    Science.gov (United States)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  11. [A survey of utilization of and problems with the MSDS in chemical substances management at workplaces in Kanagawa Prefecture].

    Science.gov (United States)

    Koshi, Kimiko; Mouri, Tetuo; Sugimori, Hiroki; Numano, Takashi; Ashida, Toshifumi; Hiro, Hisanori; Miyake, Hitoshi; Fukushima, Michiko; Ishiwata, Kouichi

    2002-09-01

    Kanagawa Occupational Health Promotion Center conducted a survey on how the MSDS is utilized at workplaces with more than 50 employees handling chemical substances, and what measures are taken to help employees to thoroughly understand information in the Material Safety Data Sheet (MSDS). Questionnaires were sent out to 265 enterprises in Kanagawa prefecture, putting questions to industrial physicians and industrial hygiene supervisors. The objective of the survey was to find out how MSDS is adopted in the system to manage occupational health, what improvements the survey respondents want in MSDS and what expectations the respondents have of our center. 193 enterprises (72.8%) returned answers to the questionnaire. The major findings are as follows. (1) In many companies, information on hazardous/toxic materials is "controlled by a division using such materials", and roughly half of the companies have compiled a common list shared throughout the company. (2) For the most part suppliers submit to the MSDS. Larger companies have a higher rate of posting up or filing the MSDS at their workplaces. Only 25.8% of the companies "rewrite the MSDS so that workers can understand it." (3) Companies that carry out a hazard/toxicity assessment before introducing a new chemical substance account for 72.1%, which is higher than we expected. It indicates that even though the companies don't manage the MSDS adequately, they are highly concerned about hazard control of chemical substances. (4) The rate of answering that "the current MSDS is not easy to understand" is higher among large-sized enterprises and lower among enterprises with fewer than 300 employees. (5) Asked what improvement needs to be made on the MSDS, the industrial physicians and industrial hygiene supervisors gave same answers such as "Workers find the terminology difficult to understand." and "Levels of toxicity can't be clearly identified." (6) The respondents expect our center to provide information for the MSDS

  12. Magnetic, chemically peculiar (CP2) stars in the SuperWASP survey

    Science.gov (United States)

    Bernhard, K.; Hümmerich, S.; Paunzen, E.

    2015-12-01

    The magnetic chemically peculiar (CP2) stars of the upper main sequence are well-suited for investigating the impact of magnetic fields on the surface layers of stars, which leads to abundance inhomogeneities (spots) resulting in photometric variability. The light changes are explained in terms of the oblique rotator model; the derived photometric periods thus correlate with the rotational periods of the stars. CP2 stars exhibiting this kind of variability are classified as α2 Canum Venaticorum (ACV) variables. We have analysed around 3 850 000 individual photometric WASP measurements of magnetic chemically peculiar (CP2) stars and candidates selected from the catalogue of Ap, HgMn, and Am stars, with the ultimate goal of detecting new ACV variables. In total, we found 80 variables, from which 74 are reported here for the first time. The data allowed us to establish variability for 23 stars which had been reported as probably constant in the literature before. Light curve parameters were obtained for all stars by a least-squares fit with the fundamental sine wave and its first harmonic. Because of the scarcity of Strömgren uvbyβ measurements and the lack of parallax measurements with an accuracy better than 20%, we are not able to give reliable astrophysical parameters for the investigated objects.

  13. Magnetic, chemically peculiar (CP2) stars in the SuperWASP survey

    CERN Document Server

    Bernhard, K; Paunzen, E

    2015-01-01

    The magnetic chemically peculiar (CP2) stars of the upper main sequence are well-suited for investigating the impact of magnetic fields on the surface layers of stars, which leads to abundance inhomogeneities (spots) resulting in photometric variability. The light changes are explained in terms of the oblique rotator model; the derived photometric periods thus correlate with the rotational periods of the stars. CP2 stars exhibiting this kind of variability are classified as alpha2 Canum Venaticorum (ACV) variables. We have analysed around 3 850 000 individual photometric WASP measurements of magnetic chemically peculiar (CP2) stars and candidates selected from the Catalogue of Ap, HgMn, and Am stars, with the ultimate goal of detecting new ACV variables. In total, we found 80 variables, from which 74 are reported here for the first time. The data allowed us to establish variability for 23 stars which had been reported as probably constant in the literature before. Light curve parameters were obtained for all ...

  14. The HIFI spectral survey of AFGL 2591 (CHESS). III. Chemical structure of the protostellar envelope

    CERN Document Server

    Kazmierczak-Barthel, Maja; van der Tak, Floris; Chavarría, Luis; van der Wiel, Matthijs

    2014-01-01

    We aim to understand the rich chemical composition of AFGL 2591, a prototypical isolated high-mass star-forming region. Based on HIFI and JCMT data, the molecular abundances of species found in the protostellar envelope of AFGL 2591 were derived with the Monte Carlo radiative transfer code RATRAN, assuming either constant values or 1D stepwise radial profiles as abundance distributions. The reconstructed 1D abundances were compared with the results of time-dependent gas-grain chemical modeling, considering ages of 10,000 to 50,000 years, cosmic-ray ionization rates of 0.5 to 50 times 10^-16 s^-1, uniformly-sized 0.1-1 micron dust grains, a dust/gas ratio of 1%, and several sets of initial molecular abundances with C/O 1. Constant abundance models give good fits to the data for CO, CN, CS, HCO+, H2CO, N2H+, C2H, NO, OCS, OH, H2CS, O, C, C+, and CH. Models with an abundance jump at 100 K give good fits to the data for NH3, SO, SO2, H2S, H2O, HCl, and CH3OH. For HCN and HNC, the best models have an abundance jum...

  15. Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching

    Science.gov (United States)

    Tiginyanu, I. M.; Ursaki, V. V.; Zalamai, V. V.; Langa, S.; Hubbard, S.; Pavlidis, D.; Föll, H.

    2003-08-01

    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence spectroscopy characterization shows that the as-grown bulk GaN layers suffer from compressive biaxial strain of 0.5 GPa. The majority of nanocolumns are fully relaxed from strain, and the room-temperature luminescence is free excitonic. The high quality of the columnar nanostructures evidenced by the enhanced intensity of the exciton luminescence and by the decrease of the yellow luminescence is explained by the peculiarities of the anodic etching processing.

  16. Metal assisted catalyzed etched (MACE) black Si: optics and device physics.

    Science.gov (United States)

    Toor, Fatima; Miller, Jeffrey B; Davidson, Lauren M; Duan, Wenqi; Jura, Michael P; Yim, Joanne; Forziati, Joanne; Black, Marcie R

    2016-08-25

    Metal-assisted catalyzed etching (MACE) of silicon (Si) is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features, including nanowires (NWs), that can be tuned to achieve various useful engineering goals, in particular with respect to Si solar cells. In this review, we introduce the science and technology of MACE from the literature, and provide an in-depth analysis of MACE to enhance Si solar cells, including the outlook for commercial applications of this technology.

  17. Ion-stimulated Gas Desorption Yields of Electropolished, Chemically Etched, and Coated (Au, Ag, Pd, TiZrV) Stainless Steel Vacuum Chambers and St707 Getter Strips Irradiated with 4.2 MeV/u lead ions

    CERN Document Server

    Mahner, E; Küchler, D; Malabaila, M; Taborelli, M

    2005-01-01

    The ion-induced desorption experiment, installed in the CERN Heavy Ion Accelerator LINAC 3, has been used to measure molecular desorption yields for 4.2 MeV/u lead ions impacting under grazing incidence on different accelerator-type vacuum chambers. Desorption yields for H2, CH4, CO, and CO2, which are of fundamental interest for future accelerator applications, are reported for different stainless steel surface treatments. In order to study the effect of the surface oxide layer on the gas desorption, gold-, silver-, palladium-, and getter-coated 316 LN stainless steel chambers and similarly prepared samples were tested for desorption at LINAC 3 and analysed for chemical composition by X-ray Photoemission Spectroscopy (XPS). The large effective desorption yield of 2 x 104 molecules/Pb53+ ion, previously measured for uncoated, vacuum fired stainless steel, was reduced after noble-metal coating by up to 2 orders of magnitude. In addition, pressure rise measurements, the effectiveness of beam scrubbing with le...

  18. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  19. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  20. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  1. Facet selective etching of Au microcrystallites

    Institute of Scientific and Technical Information of China (English)

    Gangaiah Mettela and Giridhar U. Kulkarni

    2015-01-01

    High-symmetry crystals exhibit isotropic properties. Inducing anisotropy, e.g., by facet selective etching, is considered implausible in face-centered cubic (FCC) metals, particularly gold, which, in addition to being an FCC, is noble. We report for the first time the facet selective etching of Au microcrystals obtained in the form of cuboctahedra and pentagonal rods from the thermolysis of a gold- organic precursor. The selective etching of {111} and {100} facets was achieved using a capping method in which tetraoctylammonium cations selectively cap the {111} facets while Br- ions protect the {100} facets. The exposed facets are oxidized by O2/C1-, yielding a variety of interesting geometries. The facet selective etching of the Au microcrystallites is governed only by the nature of the facets; the geometry of the microcystallite does not appear to play a significant role. The etched surfaces appear rough, but a closer examination reveals well-defined corrugations that are indexable to high hkl values. Such surfaces exhibit enhanced Raman activity.

  2. Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor

    Science.gov (United States)

    Luan, P.; Knoll, A. J.; Wang, H.; Kondeti, V. S. S. K.; Bruggeman, P. J.; Oehrlein, G. S.

    2017-01-01

    The surface interaction of a well-characterized time modulated radio frequency (RF) plasma jet with polystyrene, poly(methyl methacrylate) and poly(vinyl alcohol) as model polymers is investigated. The RF plasma jet shows fast polymer etching but mild chemical modification with a characteristic carbonate ester and NO formation on the etched surface. By varying the plasma treatment conditions including feed gas composition, environment gaseous composition, and treatment distance, we find that short lived species, especially atomic O for Ar/1% O2 and 1% air plasma and OH for Ar/1% H2O plasma, play an essential role for polymer etching. For O2 containing plasma, we find that atomic O initiates polymer etching and the etching depth mirrors the measured decay of O atoms in the gas phase as the nozzle-surface distance increases. The etching reaction probability of an O atom ranging from 10-4 to 10-3 is consistent with low pressure plasma research. We also find that adding O2 and H2O simultaneously into Ar feed gas quenches polymer etching compared to adding them separately which suggests the reduction of O and OH density in Ar/O2/H2O plasma.

  3. Sub-5 nm graphene nanopore fabrication by nitrogen ion etching induced by a low-energy electron beam.

    Science.gov (United States)

    Fox, Daniel S; Maguire, Pierce; Zhou, Yangbo; Rodenburg, Cornelia; O'Neill, Arlene; Coleman, Jonathan N; Zhang, Hongzhou

    2016-05-13

    A flexible and efficient method to fabricate nanopores in graphene has been developed. A focused, low-energy (5 keV) electron beam was used to locally activate etching of a graphene surface in a low pressure (0.3 Pa) N2 environment. Nanopores with sub-5 nm diameters were fabricated. The lattice structure of the graphene was observed to recover within 20 nm of the nanopore edge. Nanopore growth rates were investigated systematically. The effects of nitrogen pressure, electron beam dwell time and beam current were characterised in order to understand the etching mechanism and enable optimisation of the etching parameters. A model was developed which describes how the diffusion of ionised nitrogen affects the nanopore growth rate. Etching of other two-dimensional materials was attempted as demonstrated with MoS2. The lack of etching observed supports our model of a chemical reaction-based mechanism. The understanding of the etching mechanism will allow more materials to be etched by selection of an appropriate ion species.

  4. The Gaia-ESO Survey: chemical signatures of rocky accretion in a young solar-type star

    CERN Document Server

    Spina, L; Randich, S; Sacco, G G; Jeffries, R; Magrini, L; Franciosini, E; Meyer, M R; Tautvaišienė, G; Gilmore, G; Alfaro, E J; Prieto, C Allende; Bensby, T; Bragaglia, A; Flaccomio, E; Koposov, S E; Lanzafame, A C; Costado, M T; Hourihane, A; Lardo, C; Lewis, J; Monaco, L; Morbidelli, L; Sousa, S G; Worley, C C; Zaggia, S

    2015-01-01

    It is well known that newly formed planetary systems undergo processes of orbital reconfiguration and planetary migration. As a result, planets or protoplanetary objects may accrete onto the central star, being fused and mixed into its external layers. If the accreted mass is sufficiently high and the star has a sufficiently thin convective envelope, such events may result in a modification of the chemical composition of the stellar photosphere in an observable way, enhancing it with elements that were abundant in the accreted mass. The recent Gaia-ESO Survey observations of the 10-20 Myr old Gamma Velorum cluster have enabled identifying a star that is significantly enriched in iron with respect to other cluster members. In this Letter we further investigate the abundance pattern of this star, showing that its abundance anomaly is not limited to iron, but is also present in the refractory elements, whose overabundances are correlated with the condensation temperature. This finding strongly supports the hypot...

  5. Quantum confinement effect in cheese like silicon nano structure fabricated by metal induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Shailendra K., E-mail: phd1211512@iiti.ac.in; Sahu, Gayatri; Sagdeo, Pankaj R.; Kumar, Rajesh [Material Research Laboratory, Discipline of Physics & MSEG, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India)

    2015-08-28

    Quantum confinement effect has been studied in cheese like silicon nano-structures (Ch-SiNS) fabricated by metal induced chemical etching using different etching times. Scanning electron microscopy is used for the morphological study of these Ch-SiNS. A visible photoluminescence (PL) emission is observed from the samples under UV excitation at room temperature due to quantum confinement effect. The average size of Silicon Nanostructures (SiNS) present in the samples has been estimated by bond polarizability model using Raman Spectroscopy from the red-shift observed from SiNSs as compared to its bulk counterpart. The sizes of SiNS present in the samples decreases as etching time increase from 45 to 75 mintunes.

  6. Applications of porous silicon formed by electrochemical etching using an electrolyte based on HF:formaldehyde

    Science.gov (United States)

    De La Luz Merino, S.; Morales-Morales, F.; Méndez-Blas, A.; Calixto, M. E.; Nieto-Caballero, F. G.; García-Salgado, G.

    2013-06-01

    In this work, we report the experimental results on the formation of porous silicon (PSi) monolayers by electrochemical etching using a formaldehyde based electrolyte. The results were compared with PSi monolayers obtained with the traditional electrolyte (HF:ethanol). Both electrolytes facilitate the removal of H2 generated as a subproduct during the electrochemical etching process in the surface of the c-Si substrate. Formaldehyde presents a good affinity to surfaces and interfaces and the excess of water in the electrolyte reduces the pore sizes of PSi samples. The porosity and etching rate values are similar than those obtained using HF:et solutions. The refractive index values are the same in both cases at the same porosity in the visible range. The results have shown that the chemical characteristics of the ethanol and formaldehyde can give some different advantages to the PSi process and its applications.

  7. Nanopores in track-etched polymer membranes characterized by small-angle x-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Cornelius, T W; Schiedt, B; Severin, D; Trautmann, C [GSI Helmholtz Centre for Heavy Ion Research, Planckstrasse 1, 64291 Darmstadt (Germany); Pepy, G [Institute for Solid State Physics, SzFKI, POB 49, H-1525 Budapest (Hungary); Toulemonde, M [Center of Research on Ions Materials and Photonics (CIMAP), CEA, CNRS, ENSICAEN, University of Caen, BP 5133, Bd H Becquerel, 14070 Caen Cedex 5 (France); Apel, P Yu [Joint Institute for Nuclear Research, Joliot-Curie Street 6, Dubna (Russian Federation); Boesecke, P, E-mail: thomas.cornelius@esrf.fr [European Synchrotron Radiation Facility (ESRF), BP 220, 38043 Grenoble Cedex (France)

    2010-04-16

    Nanochannels and nanowires with diameters ranging from 30 to 400 nm were produced by etching ion tracks in thin polyarylate and polycarbonate foils. The shape and the size distribution of dry and wet nanochannels, as well as of nanowires grown therein, were examined by small-angle x-ray scattering. The x-ray intensity as a function of the scattering vector exhibits pronounced oscillations showing that both the channels and the wires have a highly cylindrical geometry and a very narrow size distribution. UV exposure before chemical etching significantly improves the monodispersity of the nanopores. For fixed etching conditions, the scattering patterns provide evidence that the diameter of dry and water-filled channels as well as for embedded nanowires are identical, demonstrating that the pores in the polymer are completely filled.

  8. Oxygen plasma etching of silver-incorporated diamond-like carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Marciano, F.R., E-mail: fernanda@las.inpe.b [Instituto Nacional de Pesquisas Espaciais (INPE), Laboratorio Associado de Sensores e Materiais (LAS), Av. dos Astronautas 1758, Sao Jose dos Campos, 12227-010, SP (Brazil); Instituto Tecnologico de Aeronautica (ITA), Centro Tecnico Aeroespacial (CTA), Pca. Marechal Eduardo Gomes, 50-Sao Jose dos Campos, 12228-900, SP (Brazil); Bonetti, L.F. [Clorovale Diamantes Industria e Comercio Ltda, Estr. do Torrao de Ouro, 500-Sao Jose dos Campos, 12229-390, SP (Brazil); Pessoa, R.S.; Massi, M. [Instituto Tecnologico de Aeronautica (ITA), Centro Tecnico Aeroespacial (CTA), Pca. Marechal Eduardo Gomes, 50-Sao Jose dos Campos, 12228-900, SP (Brazil); Santos, L.V.; Trava-Airoldi, V.J. [Instituto Nacional de Pesquisas Espaciais (INPE), Laboratorio Associado de Sensores e Materiais (LAS), Av. dos Astronautas 1758, Sao Jose dos Campos, 12227-010, SP (Brazil)

    2009-08-03

    Diamond-like carbon (DLC) film as a solid lubricant coating represents an important area of investigation related to space devices. The environment for such devices involves high vacuum and high concentration of atomic oxygen. The purpose of this paper is to study the behavior of silver-incorporated DLC thin films against oxygen plasma etching. Silver nanoparticles were produced through an electrochemical process and incorporated into DLC bulk during the deposition process using plasma enhanced chemical vapor deposition technique. The presence of silver does not affect significantly DLC quality and reduces by more than 50% the oxygen plasma etching. Our results demonstrated that silver nanoparticles protect DLC films against etching process, which may increase their lifetime in low earth orbit environment.

  9. An etched multilayer as a dispersive element in a curved-crystal spectrometer: implementation and performance

    CERN Document Server

    Jonnard, Philippe; André, Jean-Michel; Coudevylle, Jean-René; Isac, Nathalie; 10.1002/xrs.2398

    2012-01-01

    Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer mirrors are used in the soft x-ray range to improve the spectral resolution of wavelength dispersive spectrometers equipped with periodic multilayers. We describe the fabrication process of such an etched multilayer dispersive element, its characterization through reflectivity measurement and simulations, and its implementation in a high-resolution Johann-type spectrometer. The specially designed patterning of a Mo/B4C multilayer is found fruitful in the range of the C K emission as the diffraction pattern narrows by a factor 4 with respect to the non-etched structure. This dispersive element with an improved spectral resolution was successfully implemented for electronic structure study with an improved spectral resolution by x-ray emission spectroscopy. As first results we present the distinction between the chemical states of carbon atoms in various compounds, such as graphite, SiC and B4C, by the different sh...

  10. Preparing superhydrophobic copper surfaces with rose petal or lotus leaf property using a simple etching approach

    Science.gov (United States)

    Talesh Bahrami, H. R.; Ahmadi, B.; Saffari, H.

    2017-05-01

    A facile chemical etching process is developed to fabricate superhydrophobic copper surfaces. In the first step, cleaned copper surfaces immersed in ferric chloride (FeCl3) solutions with specific concentrations for different times. Etched surfaces exhibit the maximum contact angle of 140°. They have large sliding angle and water droplets stuck to the surface even if they were turned upside down which is well-known as rose petal effect. After stearic acid modification of etched surfaces, their contact angle slightly increased to above 150° and sliding angle decreased to smaller than 10° in some cases, which is same as lotus plant leaves property against water. Inspecting SEM images of etched surfaces reveals that many micro-nano structures forming blossom like buildings with curved petals of nanoscale thicknesses are formed. The micro-nano structures sizes and shapes affecting surface hydrophobicity are regulated by controlling reaction times and etchant solution concentrations. X-ray diffraction (XRD) analysis is done on a sample before and after of the etching process where patterns indicate that the same compositions present on the sample.

  11. General fabrication of ordered nanocone arrays by one-step selective plasma etching.

    Science.gov (United States)

    Wang, Qiang; Tian, Zhaoshuo; Li, Yunlong; Tian, Shibing; Li, Yunming; Ren, Shoutian; Gu, Changzhi; Li, Junjie

    2014-03-21

    One-step selective direct current (DC) plasma etching technology is employed to fabricate large-area well-aligned nanocone arrays on various functional materials including semiconductor, insulator and metal. The cones have nanoscale apexes (∼2 nm) with high aspect ratios, which were achieved by a selective plasma etching process using only CH4 and H2 in a bias-assisted hot filament chemical vapor deposition (HFCVD) system without any masked process. The CH(3)(+) ions play a major role to etch the roughened surface into a conical structure under the auxiliary of H(+) ions. Randomly formed nano-carbon may act as an original mask on the smooth surface to initiate the following selective ions sputtering. Physical impinging of energetic ions onto the concave regions is predominant in comparison with the etching of convex parts on the surface, which is identified as the key mechanism for the formation of conical nanostructures. This one-step maskless plasma etching technology enables the universal formation of uniform nanocone structures on versatile substrates for many promising applications.

  12. Effect of ammonia gas etching on growth of vertically aligned carbon nanotubes/nanofibers

    Institute of Scientific and Technical Information of China (English)

    Sang-Gook KIM; Sooh-Yung KIM; Hytmg-Woo LEE

    2011-01-01

    The etching effect of ammonia (NH3) on the growth of vertically aligned nanotubes/nanofibers (CNTs) was investigated by direct-current plasma enhanced chemical vapor deposition (DC-PECVD). NH3 gas etches Ni catalyst layer to form nanoscale islands while NH3 plasma etches the deposited amorphous carbon. Based on the etching effect of NH3 gas on Ni catalyst, the differences of growing bundles of CNTs and single strand CNTs were discussed; specifically, the amount of optimal NH3 gas etchingis different between bundles of CNTs and single strand CNTs. In contrast to the CNT carpet growth. the single strand CNT growth requires shorter etching time (5 min) than large catalytic patterns (10 min) since nano dots already form catalyst islands for CNT growth. Through removing the plasma pretreatment process, the damage from being exposed at high temperature substrate occurring during the plasma generation time is minimized. High resolution transmission electron microscopy (HTEM) shows fishbone structure of CNTs grown by PECVD.

  13. Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air

    Science.gov (United States)

    Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H.

    2017-04-01

    Many studies proved that non-equilibrium discharges generated at atmospheric pressure are highly effective for the bio-decontamination of surfaces of various materials. One of the key processes that leads to a desired result is plasma etching and thus the evaluation of etching rates of organic materials is of high importance. However, the comparison of reported results is rather difficult if impossible as different authors use diverse sources of atmospheric plasma that are operated at significantly different operational parameters. Therefore, we report here on the systematic study of the etching of nine different common polymers that mimic the different structures of more complicated biological systems, bovine serum albumin (BSA) selected as the model protein and spores of Bacillus subtilis taken as a representative of highly resistant micro-organisms. The treatment of these materials was performed by means of atmospheric pressure dielectric barrier discharge (DBD) sustained in open air at constant conditions. All tested polymers, BSA and spores, were readily etched by DBD plasma. However, the measured etching rates were found to be dependent on the chemical structure of treated materials, namely on the presence of oxygen in the structure of polymers.

  14. Chemical abundances of damped Lyman alpha systems in the XQ-100 survey

    CERN Document Server

    Berg, T A M; Sanchez-Ramirez, R; Prochaska, J X; Lopez, S; D'Odorico, V; Becker, G; Christensen, L; Cupani, G; Denney, K; Worsek, G

    2016-01-01

    The XQ-100 survey has provided high signal-noise spectra of 100 redshift 3-4.5 quasars with the X-Shooter spectrograph. The metal abundances for 13 elements in the 41 damped Lyman alpha systems (DLAs) identified in the XQ-100 sample are presented, and an investigation into abundances of a variety of DLA classes is conducted. The XQ-100 DLA sample contains five DLAs within 5000 km/s of their host quasar (proximate DLAs; PDLAs) as well as three sightlines which contain two DLAs within 10,000 km/s of each other along the same line-of-sight (multiple DLAs; MDLAs). Combined with previous observations in the literature, we demonstrate that PDLAs with logN(HI)21.0. These abundance discrepancies are independent of their line-of-sight velocity separation from the host quasar, and the velocity width of the metal lines (v90). Contrary to previous studies, MDLAs show no difference in [alpha/Fe] relative to single DLAs matched in metallicity and redshift. In addition, we present follow-up UVES data of J0034+1639, a sightl...

  15. Integrated Light Chemical Tagging Analyses of Seven M31 Outer Halo Globular Clusters from the Pan-Andromeda Archaeological Survey

    CERN Document Server

    Sakari, Charli M; Mackey, Dougal; Shetrone, Matthew D; Dotter, Aaron; Ferguson, Annette M N; Huxor, Avon

    2015-01-01

    Detailed chemical abundances are presented for seven M31 outer halo globular clusters (with projected distances from M31 greater than 30 kpc), as derived from high resolution integrated light spectra taken with the Hobby Eberly Telescope. Five of these clusters were recently discovered in the Pan-Andromeda Archaeological Survey (PAndAS)---this paper presents the first determinations of integrated Fe, Na, Mg, Ca, Ti, Ni, Ba, and Eu abundances for these clusters. Four of the target clusters (PA06, PA53, PA54, and PA56) are metal-poor ([Fe/H] < -1.5), alpha-enhanced (though they are possibly less alpha-enhanced than Milky Way stars at the 1 sigma level), and show signs of star-to-star Na and Mg variations. The other three globular clusters (H10, H23, and PA17) are more metal rich, with metallicities ranging from [Fe/H] = -1.4 to -0.9. While H23 is chemically similar to Milky Way field stars, Milky Way globular clusters, and other M31 clusters, H10 and PA17 have moderately low [Ca/Fe], compared to Milky Way fi...

  16. Chemical Abundances of Seven Outer Halo M31 Globular Clusters from the Pan-Andromeda Archaeological Survey

    CERN Document Server

    Sakari, Charli M

    2016-01-01

    Observations of stellar streams in M31's outer halo suggest that M31 is actively accreting several dwarf galaxies and their globular clusters (GCs). Detailed abundances can chemically link clusters to their birth environments, establishing whether or not a GC has been accreted from a satellite dwarf galaxy. This talk presents the detailed chemical abundances of seven M31 outer halo GCs (with projected distances from M31 greater than 30 kpc), as derived from high-resolution integrated-light spectra taken with the Hobby Eberly Telescope. Five of these clusters were recently discovered in the Pan-Andromeda Archaeological Survey (PAndAS)---this talk presents the first determinations of integrated Fe, Na, Mg, Ca, Ti, Ni, Ba, and Eu abundances for these clusters. Four of the target clusters (PA06, PA53, PA54, and PA56) are metal-poor ($[\\rm{Fe/H}] < -1.5$), $\\alpha$-enhanced (though they are possibly less alpha-enhanced than Milky Way stars at the 1 sigma level), and show signs of star-to-star Na and Mg variatio...

  17. The chemical composition of smokeless tobacco: a survey of products sold in the United States in 2006 and 2007.

    Science.gov (United States)

    Borgerding, M F; Bodnar, J A; Curtin, G M; Swauger, J E

    2012-12-01

    Selected toxicant concentrations and other chemical measures have been determined for 43 U.S. smokeless tobacco products sold in 2006 and 2007. Products evaluated included moist snuff, dry snuff, loose leaf, plug, dissolvable and snus tobacco brands. Reference products available for scientific research purposes and eleven Swedish products were also evaluated and compared to the commercial products studied. Chemical endpoints determined included benzo[a]pyrene (B[a]P), N'-nitrosonornicotine (NNN), N'-nitrosoanatabine (NAT), N'-nitrosoanabasine (NAB), 4-(methylnitrosamino)-1-(3-pyridyl)-1-butanone (NNK), N-Nitrosodimethylamine (NDMA), nitrite, cadmium, lead, arsenic, nickel, chromium, chloride, water, pH and nicotine. Different toxicant profiles were observed for the products studied, with snus tobacco brands generally containing relatively low concentrations of B[a]P and tobacco specific nitrosamines (TSNAs) compared to other moist snuffs. Smokeless tobacco reference product toxicant profiles were similar to corresponding commercial products, with the exception of the TSNA content of the dry snuff reference material. TSNA concentrations observed for all commercial products were lower than historically reported values, likely reflecting changes in product shelf life, tobacco curing practices and, possibly, product blend formulations during the last 20-30 years. The survey results summarized provide a temporal point of comparison with future data anticipated from FDA "harmful and potentially harmful constituents in tobacco products" reporting.

  18. A Chemical Composition Survey of the Iron-Complex Globular Cluster NGC 6273 (M 19)

    CERN Document Server

    Johnson, Christian I; Rich, R Michael; Mateo, Mario; Bailey, John I; Clarkson, William I; Olszewski, Edward W; Walker, Matthew G

    2016-01-01

    Recent observations have shown that a growing number of the most massive Galactic globular clusters contain multiple populations of stars with different [Fe/H] and neutron-capture element abundances. NGC 6273 has only recently been recognized as a member of this "iron-complex" cluster class, and we provide here a chemical and kinematic analysis of > 300 red giant branch (RGB) and asymptotic giant branch (AGB) member stars using high resolution spectra obtained with the Magellan-M2FS and VLT-FLAMES instruments. Multiple lines of evidence indicate that NGC 6273 possesses an intrinsic metallicity spread that ranges from about [Fe/H] = -2 to -1 dex, and may include at least three populations with different [Fe/H] values. The three populations identified here contain separate first (Na/Al-poor) and second (Na/Al-rich) generation stars, but a Mg-Al anti-correlation may only be present in stars with [Fe/H] > -1.65. The strong correlation between [La/Eu] and [Fe/H] suggests that the s-process must have dominated the ...

  19. Survey on Physical, Chemical and Microbiological Characteristics of PAH-Contaminated Soils in Iran

    Directory of Open Access Journals (Sweden)

    M Arbabi, S Nasseri, A Mesdaghinia, S Rezaie, K Naddafi, Gh Omrani, M Yunesian

    2004-07-01

    Full Text Available Polycyclic aromatic hydrocarbons (PAHs are one of the important groups of organic micro pollutants (Xenobiotics due to their widespread distribution and low degradability in the environment (atmosphere, water and soil. Some PAHs exhibit carcinogenic and/or mutagenic properties and are listed by the United States Environmental Protection Agency (USEPA and European Commission (EC as priority pollutants. In this research three petroleum contaminated sites in Iran were selected in order to separate and classify PAH-degrading microorganisms. Samples were analysed for: soil physico-chemical properties, soil particle size distribution, Ultrasonic extraction of PAH (phenanthrene and microbial analysis. Ultrasonic extraction method was shown to be a reliable procedure to extract a wide range of PAH concentrations from different soils, e.g. clay, silt, and clay-silt mixtures. Results showed that the extraction rate of phenanthreen in mentioned different soils was in the range of 85 – 100 percent. Results showed that two of three selected sites were contaminated with phenanthrene in the range of 10 – 100 mg/kg of soil, and had a reasonable population of PAH-degrading bacteria, which were enable to adaptate and degradate a concentration range of phenanthrene between 10 and 1000 mg/kg of soil. According to results, it can conclude that, the bioremediation of contaminated soils in Iran may be considered as a feasible practice.

  20. Single beam determination of porosity and etch rate in situ during etching of porous silicon

    Science.gov (United States)

    Foss, S. E.; Kan, P. Y. Y.; Finstad, T. G.

    2005-06-01

    A laser reflection method has been developed and tested for analyzing the etching of porous silicon (PS) films. It allows in situ measurement and analysis of the time dependency of the etch rate, the thickness, the average porosity, the porosity profile, and the interface roughness. The interaction of an infrared laser beam with a layered system consisting of a PS layer and a substrate during etching results in interferences in the reflected beam which is analyzed by the short-time Fourier transform. This method is used for analysis of samples prepared with etching solutions containing different concentrations of HF and glycerol and at different current densities and temperatures. Variations in the etch rate and porosity during etching are observed, which are important effects to account for when optical elements in PS are made. The method enables feedback control of the etching so that PS films with a well-controlled porosity are obtainable. By using different beam diameters it is possible to probe interface roughness at different length scales. Obtained porosity, thickness, and roughness values are in agreement with values measured with standard methods.

  1. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik;

    2014-01-01

    in a liquid reacts with material from the substrate is the ability to fine‐tune the etch process. In wet processing the removal of material generally occurs indiscriminately of direction in the substrate ‐ hence in all directions. This puts a strong limitation on what may be achieved in terms of designs...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  2. Confined Etching within 2D and 3D Colloidal Crystals for Tunable Nanostructured Templates: Local Environment Matters.

    Science.gov (United States)

    Wendisch, Fedja J; Oberreiter, Richard; Salihovic, Miralem; Elsaesser, Michael S; Bourret, Gilles R

    2017-02-01

    We report the isotropic etching of 2D and 3D polystyrene (PS) nanosphere hcp arrays using a benchtop O2 radio frequency plasma cleaner. Unexpectedly, this slow isotropic etching allows tuning of both particle diameter and shape. Due to a suppressed etching rate at the point of contact between the PS particles originating from their arrangement in 2D and 3D crystals, the spherical PS templates are converted into polyhedral structures with well-defined hexagonal cross sections in directions parallel and normal to the crystal c-axis. Additionally, we found that particles located at the edge (surface) of the hcp 2D (3D) crystals showed increased etch rates compared to those of the particles within the crystals. This indicates that 2D and 3D order affect how nanostructures chemically interact with their surroundings. This work also shows that the morphology of nanostructures periodically arranged in 2D and 3D supercrystals can be modified via gas-phase etching and programmed by the superlattice symmetry. To show the potential applications of this approach, we demonstrate the lithographic transfer of the PS template hexagonal cross section into Si substrates to generate Si nanowires with well-defined hexagonal cross sections using a combination of nanosphere lithography and metal-assisted chemical etching.

  3. Electrical field-induced faceting of etched features using plasma etching of fused silica

    Science.gov (United States)

    Huff, M.; Pedersen, M.

    2017-07-01

    This paper reports a previously unreported anomaly that occurs when attempting to perform deep, highly anisotropic etches into fused silica using an Inductively-Coupled Plasma (ICP) etch process. Specifically, it was observed that the top portion of the etched features exhibited a substantially different angle compared to the vertical sidewalls that would be expected in a typical highly anisotropic etch process. This anomaly has been termed as "faceting." A possible explanation of the mechanism that causes this effect and a method to eradicate it has been developed. Additionally, the method to eliminate the faceting is demonstrated. It is theorized that this faceting is a result of the interaction of the electro-potential electrical fields that surround the patterned nickel layers used as a hard mask and the electrical fields directing the high-energy ions from the plasma to the substrate surface. Based on this theory, an equation for calculating the minimum hard mask thickness required for a desired etch depth into fused silica to avoid faceting was derived. As validation, test samples were fabricated employing hard masks of thicknesses calculated based on the derived equation, and it was found that no faceting was observed on these samples, thereby demonstrating that the solution performed as predicted. Deep highly anisotropic etching of fused silica, as well as other forms of silicon dioxide, including crystalline quartz, using plasma etching, has an important application in the fabrication of several MEMS, NEMS, microelectronic, and photonic devices. Therefore, a method to eliminate faceting is an important development for the accurate control of the dimensions of deep and anisotropic etched features of these devices using ICP etch technology.

  4. Chemical abundances of the damped Lyman α systems in the XQ-100 survey

    Science.gov (United States)

    Berg, T. A. M.; Ellison, S. L.; Sánchez-Ramírez, R.; Prochaska, J. X.; Lopez, S.; D'Odorico, V.; Becker, G.; Christensen, L.; Cupani, G.; Denney, K.; Worseck, G.

    2016-12-01

    The XQ-100 survey has provided high signal-noise spectra of 100 redshift 3-4.5 quasars with the X-Shooter spectrograph. The metal abundances for 13 elements in the 41 damped Ly α systems (DLAs) identified in the XQ-100 sample are presented, and an investigation into abundances of a variety of DLA classes is conducted. The XQ-100 DLA sample contains five DLAs within 5000 km s-1 of their host quasar (proximate DLAs; PDLAs) as well as three sightlines which contain two DLAs within 10 000 km s-1 of each other along the same line of sight (multiple DLAs; MDLAs). Combined with previous observations in the literature, we demonstrate that PDLAs with log N(H I) systems with similar redshift and N(H I)], whilst higher [S/H] and [Si/H] are seen in PDLAs with log N(H I) > 21.0. These abundance discrepancies are independent of their line-of-sight velocity separation from the host quasar, and the velocity width of the metal lines (v90). Contrary to previous studies, MDLAs show no difference in [α/Fe] relative to single DLAs matched in metallicity and redshift. In addition, we present follow-up UVES data of J0034+1639, a sightline containing three DLAs, including a metal-poor DLA with [Fe/H] = -2.82 (the third lowest [Fe/H] in DLAs identified to date) at zabs = 4.25. Lastly we study the dust-corrected [Zn/Fe], emphasizing that near-IR coverage of X-Shooter provides unprecedented access to Mg II, Ca II and Ti II lines (at redshifts 3-4) to provide additional evidence for subsolar [Zn/Fe] ratio in DLAs.

  5. Selectivity on Etching: Creation of High-Energy Facets on Copper Nanocrystals for CO2 Electrochemical Reduction.

    Science.gov (United States)

    Wang, Zhenni; Yang, Guang; Zhang, Zhaorui; Jin, Mingshang; Yin, Yadong

    2016-04-26

    Creating high-energy facets on the surface of catalyst nanocrystals represents a promising method for enhancing their catalytic activity. Herein we show that crystal etching as the reverse process of crystal growth can directly endow nanocrystal surfaces with high-energy facets. The key is to avoid significant modification of the surface energies of the nanocrystal facets by capping effects from solvents, ions, and ligands. Using Cu nanocubes as the starting material, we have successfully demonstrated the creation of high-energy facets in metal nanocrystals by controlled chemical etching. The etched Cu nanocrystals with enriched high-energy {110} facets showed significantly enhanced activity toward CO2 reduction. We believe the etching-based strategy could be extended to the synthesis of nanocrystals of many other catalysts with more active high-energy facets.

  6. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  7. A preliminary study on the etching behavior of SiO sub 2 aerogel film with CHF sub 3 gas

    CERN Document Server

    Wang, S J; Yeom, G Y

    1998-01-01

    Etching behavior of SiO sub 2 aerogel film has been investigated in order to examine the feasibility of its application to an interlevel dielectric material. Low dielectric property of SiO sub 2 aerogel film is simply originated from its highly porous structure, but interconnected particles are covered with surface chemical bondings (-OH, -OC sub 2 H sub 5 , etc). Etching experiments have been performed with high density inductively coupled CHF sub 3 plasma. The effects of porous structure and surface chemical bondings on the etching of SiO sub 2 aerogel film have been analyzed. The changes of surface morphology were observed using scanning electron microscopy. X-ray photoelectron spectroscopic analyses revealed compositions and chemical bonding states of reaction layer. From the analyses, 3-dimensional etching was not feasible macroscopically in SiO sub 2 aerogel film even with its porous nature because network structure was maintained through the etching process. Internal surface chemicals seemed to act an ...

  8. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  9. In vitro short-term bonding performance of zirconia treated with hot acid etching and primer conditioning etching and primer conditioning.

    Science.gov (United States)

    Xie, Haifeng; Chen, Chen; Dai, Wenyong; Chen, Gang; Zhang, Feimin

    2013-01-01

    This study aimed to investigate and compare the resin bond strengths of zirconia conditioned as follows: alumina sandblasting; alumina sandblasting+application of 10-MDP-containing primer; alumina sandblasting+application of Z-Prime Plus or Metal/Zirconia Primer (new zirconia primers); tribochemical silica coating+silanization; hot acid etching in three different combinations [H2SO4/(NH4)2SO4, HF/HNO3, H2SO4/HF/HNO3]+application of 10-MDP-containing primer. Shear bond strengths (SBS) after water storage for 24 h and 40 days were measured to assess resin bonding performance. Surface and chemical properties of conditioned zirconia surfaces and primers were characterized using scanning electron microscopy, energy dispersive X-ray spectrometry, Fourier transform infrared spectroscopy, and atomic force microscopy. Surface roughness ranked in descending order was: hot acid etching > tribochemical silica coating > alumina sandblasting. Combination of tribochemical silica coating and silanization showed the highest initial SBS (12.46±2.13 MPa) (P<0.01). Etching with H2SO4/(NH4)2SO4 (13.15±3.24 MPa) and HF/HNO3 (13.48±2.15 MPa) showed significantly better bond durability (P<0.01). Hot acid etching seemed to be a promising surface roughening treatment to improve resin-zirconia bonding.

  10. Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

    Science.gov (United States)

    2014-01-01

    Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively. PMID:25249824

  11. Dislocation in heteroepitaxial diamond visualized by hydrogen plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, K.; Kodama, H. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan); Suzuki, K. [TOPLAS ENGINEERING Co., Ltd., Chofu, Tokyo 182-0006 (Japan); Sawabe, A. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan)

    2016-02-01

    The classification of etch pits formed by hydrogen plasma etching on heteroepitaxial diamond has been done by cross-sectional transmission electron microscope (TEM). We demonstrated that the origin of etch pit was mainly [001] threading dislocation. From invisibility criterion of dislocation contrast in TEM observation, this dislocation was identified as edge and 45° mixed dislocation. The correlation between dislocation types and etch pit shape was discussed. - Highlights: • The etch pits formed by plasma etching on heteroepitaxial diamond have been clarified by TEM. • The origin of etch pit was mainly [001] threading dislocation. • These dislocations were identified as edge and 45° mixed type. • The correlation between dislocation types and etch pit shape.

  12. Irregular shaping of polystyrene nanosphere array by plasma etching

    National Research Council Canada - National Science Library

    Luo, Hao; Liu, Tingting; Ma, Jun; Wang, Wei; Li, Heng; Wang, Pengwei; Bai, Jintao; Jing, Guangyin

    2013-01-01

    .... Here, by plasma etching, the controllable tailoring of the nanosphere is realized and its morphology dependence on the initial shape, microscopic roughness, and the etching conditions is investigated quantitatively...

  13. Effect of enamel etching time on roughness and bond strength

    National Research Council Canada - National Science Library

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra...

  14. Measurements of the high energy neutron component of cosmic radiation fields in aircraft using etched track dosemeters

    CERN Document Server

    Bartlett, D T; Tanner, R J; Steele, J D

    2001-01-01

    Measurements of the complex cosmic radiation field in aircraft at altitude are made with a passive survey meter comprising routine-use thermoluminescent detectors and etched track detectors. The energy dependence of response of the etched track detectors used to determine the neutron component has been characterized, partly, up to a neutron energy of 180 MeV. The neutron detectors are routinely calibrated in the CERN EC Ref.Field. The 15% determination level for total dose equivalent is 100 mu Sv. The evidence is that the passive survey meter provides a reliable determination of route dose. (41 refs).

  15. Incorporating transgenerational testing and epigenetic mechanisms into chemical testing and risk assessment: A survey of transgenerational responses in environmental chemical studies

    Science.gov (United States)

    A number of environmental chemicals have been shown to alter markers of epigenetic change. Some published multi-generation rodent studies have identified effects on F2 and greater generations after chemical exposures solely to F0 dams, but were not focused on chemical safety. We ...

  16. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (p<0.001) of bond strength with surface roughness of enamel. Conclusion All groups might show clinically

  17. Dopant Selective Reactive Ion Etching of Silicon Carbide

    Science.gov (United States)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  18. Comparative Analysis of in vitro Performance of Total-Etch and Self-Etch Adhesives

    Directory of Open Access Journals (Sweden)

    Timur V. Melkumyan

    2016-12-01

    Full Text Available The aim of the study was in vitro assessment of shear bond strength and micro-leakage after application of total-etch and self-etch adhesive systems. Materials and Methods: Four adhesive systems were chosen for assessment of adhesion performance: Contax (DMG, GmbH, Bond Force (Tokuyama Dental Corp. Japan Mfr, Te-Econom Bond (Ivoclar Vivadent, Liechtenstein and Swisstec SL Bond (Coltene, Switzerland. The assessment of bond strength was performed on 20 tooth samples, which were prepared in accordance with the UltraTest technique for shear bond strength (SBS estimation. The test was conducted at a crosshead speed of 1.0 mm/min and results were fixed in kilograms. The assessment of SBS was performed on enamel and dentin separately. Microleakage assessment of self-etch and total-etch adhesive systems was performed on 20 extracted non-carious upper human premolars with immersion in 1% methylene blue solution after thermocycling. Results: Good SBS results and microleakage values on the dentin substrate were obtained after application of the Contax self-etch bonding agent. But the values of bond strength to enamel and the extent of dye penetration within the composite-enamel interface were still better with the total-etch approach.

  19. Microtensile bond strength of etch and rinse versus self-etch adhesive systems.

    Science.gov (United States)

    Hamouda, Ibrahim M; Samra, Nagia R; Badawi, Manal F

    2011-04-01

    The aim of this study was to compare the microtensile bond strength of the etch and rinse adhesive versus one-component or two-component self-etch adhesives. Twelve intact human molar teeth were cleaned and the occlusal enamel of the teeth was removed. The exposed dentin surfaces were polished and rinsed, and the adhesives were applied. A microhybride composite resin was applied to form specimens of 4 mm height and 6 mm diameter. The specimens were sectioned perpendicular to the adhesive interface to produce dentin-resin composite sticks, with an adhesive area of approximately 1.4 mm(2). The sticks were subjected to tensile loading until failure occurred. The debonded areas were examined with a scanning electron microscope to determine the site of failure. The results showed that the microtensile bond strength of the etch and rinse adhesive was higher than that of one-component or two-component self-etch adhesives. The scanning electron microscope examination of the dentin surfaces revealed adhesive and mixed modes of failure. The adhesive mode of failure occurred at the adhesive/dentin interface, while the mixed mode of failure occurred partially in the composite and partially at the adhesive/dentin interface. It was concluded that the etch and rinse adhesive had higher microtensile bond strength when compared to that of the self-etch adhesives.

  20. Dentin diffusion of HEMA released from etch-and-rinse and self-etch bonding systems.

    Science.gov (United States)

    Rathke, Andreas; Alt, Andreas; Gambin, Nadin; Haller, Bernd

    2007-12-01

    The aim of this in vitro study was to determine the diffusion of 2-hydroxyethyl methacrylate (HEMA) released from different bonding systems (BS) through dentin. Occlusal cavities with a remaining dentin thickness (RDT) of 0.5 mm (n=90) and 0.25 mm (n=80), respectively, were prepared in dentin discs of non-carious human molars. Artificial pulp chambers were attached to the pulpal side of each dentin disc. Bonding systems were applied with (Clearfil SE Bond, OptiBond FL, OptiBond Solo Plus) or without (AdheSE, Adper Prompt L-Pop, Clearfil SE Bond, OptiBond FL, OptiBond Solo Plus Self Etch, Xeno III) prior phosphoric acid etching. HEMA was detected by gas chromatography/mass spectrometry (n=10 per BS and RDT). The highest mean HEMA concentration was found in the 0.25 mm RDT group treated with OptiBond FL (13.3 microg) and the lowest mean HEMA concentration was detected in the 0.5 mm RDT group treated with AdheSE (0.5 microg). At 0.25 mm RDT the quantities of HEMA recovered in the artificial pulp chambers were significantly higher than at 0.5 mm RDT, except for Clearfil SE Bond. Etching with phosphoric acid increased the detected HEMA quantities compared with self-etch BS. In deep cavity preparations, etching with phosphoric acid should be avoided in favor of the use of self-etch BS.

  1. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    A.I. Abdalla; A.J. Feilzer

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid Bond’

  2. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

  3. Sidewall damage in plasma etching of Si/SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ding, R.; Klein, L. J.; Friesen, Mark G.; Eriksson, M. A.; Wendt, A. E. [Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); IBM TJ Watson Research Center, Yorktown Heights, New York 10598 (United States); Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2009-07-15

    Plasma etching is a critical tool in the fabrication of Si/SiGe heterostructure quantum devices, but it also presents challenges, including damage to etched feature sidewalls that affects device performance. Chemical and structural changes in device feature sidewalls associated with plasma-surface interactions are considered damage, as they affect band structure and electrical conduction in the active region of the device. Here the authors report the results of experiments designed to better understand the mechanisms of plasma-induced sidewall damage in modulation-doped Si/SiGe heterostructures containing a two-dimensional electron gas. Damage to straight wires fabricated in the heterostructure using plasma etching was characterized both by measuring the width of the nonconductive ''sidewall depletion'' region at the device sidewall and by measuring the noise level factor {gamma}{sub H}/N determined from spectra of the low frequency noise. Observed increases in sidewall depletion width with increasing etch depth are tentatively attributed to the increase in total number of sidewall defects with increased plasma exposure time. Excess negative charge trapped on the feature sidewall could be another contributing factor. Defects at the bottom of etched features appear to contribute minimally. The noise level shows a minimum at an ion bombardment energy of {approx}100 eV, while the sidewall depletion width is independent of bias voltage, within experimental uncertainty. A proposed explanation of the noise trend involves two competing effects as ion energy increases: the increase in damage caused by each bombarding ion and the reduction in total number of incident ions due to shorter etch times.

  4. Chemical Abundances of Seven Outer Halo M31 Globular Clusters from the Pan-Andromeda Archaeological Survey

    Science.gov (United States)

    Sakari, Charli M.

    2017-03-01

    Observations of stellar streams in M31's outer halo suggest that M31 is actively accreting several dwarf galaxies and their globular clusters (GCs). Detailed abundances can chemically link clusters to their birth environments, establishing whether or not a GC has been accreted from a satellite dwarf galaxy. This talk presents the detailed chemical abundances of seven M31 outer halo GCs (with projected distances from M31 greater than 30 kpc), as derived from high-resolution integrated-light spectra taken with the Hobby Eberly Telescope. Five of these clusters were recently discovered in the Pan-Andromeda Archaeological Survey (PAndAS)-this talk presents the first determinations of integrated Fe, Na, Mg, Ca, Ti, Ni, Ba, and Eu abundances for these clusters. Four of the target clusters (PA06, PA53, PA54, and PA56) are metal-poor ([Fe/H] stars at the 1 sigma level), and show signs of star-to-star Na and Mg variations. The other three GCs (H10, H23, and PA17) are more metal-rich, with metallicities ranging from [Fe/H] = -1.4 to -0.9. While H23 is chemically similar to Milky Way field stars, Milky Way GCs, and other M31 clusters, H10 and PA17 have moderately-low [Ca/Fe], compared to Milky Way field stars and clusters. Additionally, PA17's high [Mg/Ca] and [Ba/Eu] ratios are distinct from Milky Way stars, and are in better agreement with the stars and clusters in the Large Magellanic Cloud (LMC). None of the clusters studied here can be conclusively linked to any of the identified streams from PAndAS; however, based on their locations, kinematics, metallicities, and detailed abundances, the most metal-rich PAndAS clusters H23 and PA17 may be associated with the progenitor of the Giant Stellar Stream, H10 may be associated with the SW Cloud, and PA53 and PA56 may be associated with the Eastern Cloud.

  5. Physical and chemical variations within the W3 star-forming region. II. The 345 GHz spectral line survey.

    Science.gov (United States)

    Helmich, F. P.; van Dishoeck, E. F.

    1997-08-01

    Results are presented of the 345 GHz spectral survey toward three sources in the W3 Giant Molecular Cloud: W3 IRS4, W3 IRS5 and W3(H_2O). Nearly 90% of the atmospheric window between 334 and 365 GHz has been scanned using the James Clerk Maxwell Telescope down to a noise level of ~80 mK per resolution element. These observations are complemented by a large amount of data in the 230 GHz atmospheric window. From this data set physical conditions and beam-averaged column densities are derived for more than 14 chemically different species (over 24 different isotopes). The physical parameters derived in Paper I (\\cite[Helmich et al. 1994]{ref36}) are confirmed by the analysis of the excitation of other species, although there is evidence that the silicon- and sulfur-bearing molecules exist in a somewhat denser and warmer environment. The densities are high, >= 10^6 cm^{-3}, in the three sources and the kinetic temperatures for the bulk of the gas range from 55 K for IRS4 to 220 K for W3(H_2O). The chemical differences between the three sources are very striking: silicon- and sulfur-bearing molecules such as SiO and SO_2 are prominent toward IRS5, whereas organic molecules like CH_3OH, CH_3OCH_3 and CH_3OCHO are at least an order of magnitude more abundant toward W3(H_2O). Vibrationally excited molecules are also detected toward this source. Only simple molecules are found toward IRS4. The data provide constraints on the amount of deuterium fractionation and the ionization fraction in the observed regions as well. These chemical characteristics are discussed in the context of an evolutionary sequence, in which IRS5 is the youngest, W3(H_2O) somewhat older and IRS4, although still enigmatic, the oldest. The James Clerk Maxwell Telescope is operated by the The Joint Astronomy Centre on behalf of the Particle Physics and Astronomy Research Council of the United Kingdom, the Netherlands Organisation for Scientific Research, and the National Research Council of Canada

  6. The Gaia-ESO Survey: the chemical structure of the Galactic discs from the first internal data release

    CERN Document Server

    Mikolaitis, Š; Recio-Blanco, A; de Laverny, P; Prieto, C Allende; Kordopatis, G; Tautvaišiene, G; Romano, D; Gilmore, G; Randich, S; Feltzing, S; Micela, G; Vallenari, A; Alfaro, E J; Bensby, T; Bragaglia, A; Flaccomio, E; Lanzafame, A C; Pancino, E; Smiljanic, R; Bergemann, M; Carraro, G; Costado, M T; Damiani, F; Hourihane, A; Jofré, P; Lardo, C; Magrini, L; Maiorca, E; Morbidelli, L; Sbordone, L; Sousa, S G; Worley, C C; Zaggia, S

    2014-01-01

    Most high-resolution spectroscopic studies of the Galactic discs were mostly confined to objects in the solar vicinity. Here we aim at enlarging the volume in which individual chemical abundances are used to characterise both discs, using the first internal data release of the Gaia-ESO survey. We derive and discuss the abundances of eight elements (Mg, Al, Si, Ca, Ti, Fe, Cr, Ni, and Y). The trends of these elemental abundances with iron are very similar to those in the solar neighbourhood. We find a natural division between alpha-rich and alpha-poor stars, best seen in the bimodality of the [Mg/M] distributions in bins of metallicity, which we attribute to thick- and thin-disc sequences, respectively. With the possible exception of Al, the observed dispersion around the trends is well described by the expected errors, leaving little room for astrophysical dispersion. Using previously derived distances from Recio-Blanco et al. (2014b), we further find that the thick-disc is more extended vertically and is mor...

  7. Survey of chemical quality and corrosion and scaling potential of drinking water distribution network of Bushehr city

    Directory of Open Access Journals (Sweden)

    Ghorban Asgari

    2015-05-01

    Full Text Available Background: Determination of water corrosion indexes is one of the affecting approaches on drinking water management. Corrosion can causes economical problems, reduce the useful life of water facilities, and health damages to consumers. The aim of this study was to survey of chemical quality and determination of the corrosion potential of the water distribution system in Bushehr city. Materials and Methods: In this cross sectional study, the sampling was carried out during one year from 7 stations. Values of Langelier, Ryznar, corrosivity and Puckorius indexes were calculated by using such parameters as pH, total dissolved solids, temperature, permanent and temporary hardness, and alkalinity. Results: The average values for pH, total dissolved solids, temperature, and alkalinity was obtained 7.5, 586.82 mg/L, 66.92 mg/L CaCO3. The corrosion indexes were calculated Langelier 0.28, Ryznar 7.24, corrosivity 12.02, and Puckorius 7.81. Conclusion: Bushehr city water is tends to be slightly scaling based on Ryznar index and corrosive based on other studied indexes. Overall, the water quality was tending to corrosive and, therefore, recommended to use corrosion resistance pipes in water transmission and network or lining the inner wall of pipes or correction the water quality.

  8. The Gaia-ESO Survey: Sodium and aluminium abundances in giants and dwarfs - Implications for stellar and Galactic chemical evolution

    CERN Document Server

    Smiljanic, R; Bragaglia, A; Donati, P; Magrini, L; Friel, E; Jacobson, H; Randich, S; Ventura, P; Lind, K; Bergemann, M; Nordlander, T; Morel, T; Pancino, E; Tautvaisiene, G; Adibekyan, V; Tosi, M; Vallenari, A; Gilmore, G; Bensby, T; Francois, P; Koposov, S; Lanzafame, A C; Recio-Blanco, A; Bayo, A; Carraro, G; Casey, A R; Costado, M T; Franciosini, E; Heiter, U; Hill, V; Hourihane, A; Jofre, P; Lardo, C; de Laverny, P; Lewis, J; Monaco, L; Morbidelli, L; Sacco, G G; Sbordone, L; Sousa, S G; Worley, C C; Zaggia, S

    2016-01-01

    Stellar evolution models predict that internal mixing should cause some sodium overabundance at the surface of red giants more massive than ~ 1.5--2.0 Msun. The surface aluminium abundance should not be affected. Nevertheless, observational results disagree about the presence and/or the degree of the Na and Al overabundances. In addition, Galactic chemical evolution models adopting different stellar yields lead to quite different predictions for the behavior of [Na/Fe] and [Al/Fe] versus [Fe/H]. Overall, the observed trends of these abundances with metallicity are not well reproduced. We readdress both issues, using new Na and Al abundances determined within the Gaia-ESO Survey, using two samples: i) more than 600 dwarfs of the solar neighborhood and of open clusters and ii) low- and intermediate-mass clump giants in six open clusters. Abundances of Na in giants with mass below ~2.0 Msun, and of Al in giants below ~3.0 Msun, seem to be unaffected by internal mixing processes. For more massive giants, the Na o...

  9. The Gaia-ESO Survey: New constraints on the Galactic disc velocity dispersion and its chemical dependencies

    CERN Document Server

    Guiglion, G; de Laverny, P; Kordopatis, G; Hill, V; Mikolaitis, Š; Minchev, I; Chiappini, C; Wyse, R F G; Gilmore, G; Randich, S; Feltzing, S; Bensby, T; Flaccomio, E; Koposov, S E; Pancino, E; Bayo, A; Costado, M T; Franciosini, E; Hourihane, A; Jofré, P; Lardo, C; Lewis, J; Lind, K; Magrini, L; Morbidelli, L; Sacco, G G; Ruchti, G; Worley, C C; Zaggia, S

    2015-01-01

    Understanding the history and the evolution of the Milky Way disc is one of the main goals of modern astrophysics. We study the velocity dispersion behaviour of Galactic disc stars as a function of the [Mg/Fe] ratio, which can be used as a proxy of relative age. This key relation is essential to constrain the formation mechanisms of the disc stellar populations as well as the cooling processes. We used the recommended parameters and chemical abundances of 7800 FGK Milky Way field stars from the second internal data release of the Gaia-ESO Survey. These stars were observed with the GIRAFFE spectrograph, and cover a large spatial volume (6+0.2dex. First, the velocity dispersion increases with [Mg/Fe] at all [Fe/H] ratios for the thin-disc stars, and then it decreases for the thick-disc at the highest [Mg/Fe] abundances. Similar trends are observed within the errors for the azimuthal velocity dispersion, while a continuous increase with [Mg/Fe] is observed for the vertical velocity dispersion. The velocity dispe...

  10. The research on conformal acid etching process of glass ceramic

    Science.gov (United States)

    Wang, Kepeng; Guo, Peiji

    2014-08-01

    A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

  11. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  12. Effect of plasma dissociation on fluorocarbon layers formed under C4F8/Ar pulsed plasma for SiO2 etching

    Science.gov (United States)

    Matsui, Miyako; Usui, Tatehito; Ono, Tetsuo

    2017-06-01

    We investigated the effects of gas pressure on the dissociation of C4F8/Ar plasma and the formations of fluorocarbon layers on etched materials by SiO2 etching using pulsed-microwave electron-cyclotron-resonance plasma. Dissociated radicals and molecules of C x F y and CF x species generated from C4F8/Ar plasma were measured by ion attachment mass spectrometry, which is a fragment-free method. The thickness and chemical state of the fluorocarbon layers formed on the etched materials were analyzed by X-ray photoelectron spectroscopy. Higher selective etching of SiO2 relative to Si3N4 was possible at 2.0 Pa but not at 0.5 Pa. Thick fluorocarbon layers, which protect etched materials from ion bombardment, formed on both SiO2 and Si3N4 surfaces; thus, both the SiO2 and Si3N4 etching rates were reduced at a high pressure. However, the CF2 flux ratio increased while the flux ratio of C2F2 decreased as the pressure increased. The increased flux of CF2 enhanced SiO2 etching because CF2 is the main etchant of SiO2. This CF2-rich plasma formed CF2-rich fluorocarbon layers, enhancing the SiO2 etching reaction.

  13. Superior Pre-Osteoblast Cell Response of Etched Ultrafine-Grained Titanium with a Controlled Crystallographic Orientation

    Science.gov (United States)

    Baek, Seung Mi; Shin, Myeong Hwan; Moon, Jongun; Jung, Ho Sang; Lee, See Am; Hwang, Woonbong; Yeom, Jong Taek; Hahn, Sei Kwang; Kim, Hyoung Seop

    2017-03-01

    Ultrafine-grained (UFG) Ti for improved mechanical performance as well as its surface modification enhancing biofunctions has attracted much attention in medical industries. Most of the studies on the surface etching of metallic biomaterials have focused on surface topography and wettability but not crystallographic orientation, i.e., texture, which influences the chemical as well as the physical properties. In this paper, the influences of texture and grain size on roughness, wettability, and pre-osteoblast cell response were investigated in vitro after HF etching treatment. The surface characteristics and cell behaviors of ultrafine, fine, and coarse-grained Ti were examined after the HF etching. The surface roughness during the etching treatment was significantly increased as the orientation angle from the basal pole was increased. The cell adhesion tendency of the rough surface was promoted. The UFG Ti substrate exhibited a higher texture energy state, rougher surface, enhanced hydrophilic wettability, and better cell adhesion and proliferation behaviors after etching than those of the coarse- and fine-grained Ti substrates. These results provide a new route for enhancing both mechanical and biological performances using etching after grain refinement of Ti.

  14. The Gaia-ESO Survey: Sodium and aluminium abundances in giants and dwarfs. Implications for stellar and Galactic chemical evolution

    Science.gov (United States)

    Smiljanic, R.; Romano, D.; Bragaglia, A.; Donati, P.; Magrini, L.; Friel, E.; Jacobson, H.; Randich, S.; Ventura, P.; Lind, K.; Bergemann, M.; Nordlander, T.; Morel, T.; Pancino, E.; Tautvaišienė, G.; Adibekyan, V.; Tosi, M.; Vallenari, A.; Gilmore, G.; Bensby, T.; François, P.; Koposov, S.; Lanzafame, A. C.; Recio-Blanco, A.; Bayo, A.; Carraro, G.; Casey, A. R.; Costado, M. T.; Franciosini, E.; Heiter, U.; Hill, V.; Hourihane, A.; Jofré, P.; Lardo, C.; de Laverny, P.; Lewis, J.; Monaco, L.; Morbidelli, L.; Sacco, G. G.; Sbordone, L.; Sousa, S. G.; Worley, C. C.; Zaggia, S.

    2016-05-01

    Context. Stellar evolution models predict that internal mixing should cause some sodium overabundance at the surface of red giants more massive than ~1.5-2.0 M⊙. The surface aluminium abundance should not be affected. Nevertheless, observational results disagree about the presence and/or the degree of Na and Al overabundances. In addition, Galactic chemical evolution models adopting different stellar yields lead to very different predictions for the behavior of [Na/Fe] and [Al/Fe] versus [Fe/H]. Overall, the observed trends of these abundances with metallicity are not well reproduced. Aims: We readdress both issues, using new Na and Al abundances determined within the Gaia-ESO Survey. Our aim is to obtain better observational constraints on the behavior of these elements using two samples: i) more than 600 dwarfs of the solar neighborhood and of open clusters and ii) low- and intermediate-mass clump giants in six open clusters. Methods: Abundances were determined using high-resolution UVES spectra. The individual Na abundances were corrected for nonlocal thermodynamic equilibrium effects. For the Al abundances, the order of magnitude of the corrections was estimated for a few representative cases. For giants, the abundance trends with stellar mass are compared to stellar evolution models. For dwarfs, the abundance trends with metallicity and age are compared to detailed chemical evolution models. Results: Abundances of Na in stars with mass below ~2.0 M⊙, and of Al in stars below ~3.0 M⊙, seem to be unaffected by internal mixing processes. For more massive stars, the Na overabundance increases with stellar mass. This trend agrees well with predictions of stellar evolutionary models. For Al, our only cluster with giants more massive than 3.0 M⊙, NGC 6705, is Al enriched. However, this might be related to the environment where the cluster was formed. Chemical evolution models that well fit the observed [Na/Fe] vs. [Fe/H] trend in solar neighborhood dwarfs

  15. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    Science.gov (United States)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2017-02-01

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen

  16. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma.

    Science.gov (United States)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L; Joseph, Eric A; Oehrlein, Gottlieb S

    2017-02-07

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar(+) ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar(+) ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen

  17. Methods of removal of defects arising at liquid etching of polycrystalline silicon

    Directory of Open Access Journals (Sweden)

    Ivanchykou A. E.

    2008-02-01

    Full Text Available The paper presents a model of generation of defects having the form of spots on the surface of the polycrystalline silicon during processing of semiconductor wafers with hydrofluoric acid based etchant, and a model of removal of such defects in chemical solutions. The authors investigate how the centrifuge speed during drying and the relief of structures, produced on the plate, effect the number of defects. It is shown that there is a possibility to remove defects by chemical treatment in the peroxide-ammonia solutions (PAS and also by sequence of chemical cleaning in Karo mixture, SiO2 etching and treatment in PAS.

  18. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Taeseung; Kim, Younghee; Chen, Jack Kun-Chieh; Chang, Jane P., E-mail: jpchang@seas.ucla.edu [Department of Chemical and Biomolecular Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)

    2015-03-15

    A reactive ion etching process with alternating Cl{sub 2} and H{sub 2} exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl{sub 2} and H{sub 2} plasmas, in comparison with the use of only Cl{sub 2} plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl{sub 2} plasma were eliminated with H{sub 2} plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices.

  19. Wafer scale oblique angle plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  20. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  1. Synthesis of Platinum Nanotubes and Nanorings via Simultaneous Metal Alloying and Etching

    KAUST Repository

    Huang, Zhiqi

    2016-04-19

    Metallic nanotubes represent a class of hollow nanostructures with unique catalytic properties. However, the wet-chemical synthesis of metallic nanotubes remains a substantial challenge, especially for those with dimensions below 50 nm. This communication describes a simultaneous alloying-etching strategy for the synthesis of Pt nanotubes with open ends by selective etching Au core from coaxial Au/Pt nanorods. This approach can be extended for the preparation of Pt nanorings when Saturn-like Au core/Pt shell nanoparticles are used. The diameter and wall thickness of both nanotubes and nanorings can be readily controlled in the range of 14-37 nm and 2-32 nm, respectively. We further demonstrated that the nanotubes with ultrathin side walls showed superior catalytic performance in oxygen reduction reaction. © 2016 American Chemical Society.

  2. Characterization of aluminum surfaces: Sorption and etching

    Science.gov (United States)

    Polkinghorne, Jeannette Clera

    Aluminum, due to its low density and low cost, is a key material for future lightweight applications. However, like other structural materials, aluminum is subject to various forms of corrosion damage that annually costs the United States approximately 5% of its GNP [1]. The main goal is to investigate the effects of various solution anions on aluminum surfaces, and specifically probe pit initiation and inhibition. Using surface analysis techniques including X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy, results have been correlated with those obtained from electrochemical methods and a radiolabeling technique developed in the Wieckowski laboratory. Analysis of data has indicated that important variables include type of anion, solution pH, and applied electrode potential. While aggressive anions such as chloride are usually studied to elucidate corrosion processes to work ultimately toward inhibition, its corrosive properties can be successfully utilized in the drive for higher energy and smaller-scale storage devices. Fundamental information gained regarding anion interaction with the aluminum surface can be applied to tailor etch processes. Standard electrochemical techniques and SEM are respectively used to etch and analyze the aluminum substrate. Aluminum electrolytic capacitors are comprised of aluminum anode foil covered by an anodically grown aluminum oxide dielectric film, electrolytic paper impregnated with electrolyte, and aluminum cathode foil. Two main processes are involved in the fabrication of aluminum electrolytic capacitors, namely etching and anodic oxide formation. Etching of the anode foil results in a higher surface area (up to 20 times area enlargement compared to unetched foil) that translates into a higher capacitance gain, permitting more compact and lighter capacitor manufacture. Anodic oxide formation on the anode, creates the required dielectric to withstand high voltage operation. A

  3. Track etching technique in membrane technology

    Energy Technology Data Exchange (ETDEWEB)

    Apel, P. E-mail: apel@lnr.jinr.ru

    2001-06-01

    Track membrane (TM) technology is an example of industrial application of track etching technique. Track-etch membranes offer distinct advantages over conventional membranes due to their precisely determined structure. Their pore size, shape and density can be varied in a controllable manner so that a membrane with the required transport and retention characteristics can be produced. The use of heavy ion accelerators made it possible to vary LET of track-forming particles, angle distribution of pore channels and pore lengths. So far the track formation and etching process has been studied in much detail for several polymeric materials. Today we understand determining factors and have numerous empirical data enabling us to manufacture any particular product based on polyethylene terephthalate (PET) or polycarbonate (PC) films. Pore shape can be made cylindrical, conical, funnel-like, or cigar-like at will. A number of modification methods has been developed for creating TMs with special properties and functions. Applications of 'conventional' track membranes can be categorized into three groups: process filtration, cell culture, and laboratory filtration. The use in biology stands out among other areas. Nuclear track pores find diverse applications as model systems and as templates for the synthesis of micro- and nanostructures.

  4. ZERODUR: bending strength data for etched surfaces

    Science.gov (United States)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  5. Gold core@silver semishell Janus nanoparticles prepared by interfacial etching

    Science.gov (United States)

    Chen, Limei; Deming, Christopher P.; Peng, Yi; Hu, Peiguang; Stofan, Jake; Chen, Shaowei

    2016-07-01

    Gold core@silver semishell Janus nanoparticles were prepared by chemical etching of Au@Ag core-shell nanoparticles at the air/water interface. Au@Ag core-shell nanoparticles were synthesized by chemical deposition of a silver shell onto gold seed colloids followed by the self-assembly of 1-dodecanethiol onto the nanoparticle surface. The nanoparticles then formed a monolayer on the water surface of a Langmuir-Blodgett trough, and part of the silver shell was selectively etched away by the mixture of hydrogen peroxide and ammonia in the water subphase, where the etching was limited to the side of the nanoparticles that was in direct contact with water. The resulting Janus nanoparticles exhibited an asymmetrical distribution of silver on the surface of the gold cores, as manifested in transmission electron microscopy, UV-vis absorption, and X-ray photoelectron spectroscopy measurements. Interestingly, the Au@Ag semishell Janus nanoparticles exhibited enhanced electrocatalytic activity in oxygen reduction reactions, as compared to their Au@Ag and Ag@Au core-shell counterparts, likely due to a synergistic effect between the gold cores and silver semishells that optimized oxygen binding to the nanoparticle surface.Gold core@silver semishell Janus nanoparticles were prepared by chemical etching of Au@Ag core-shell nanoparticles at the air/water interface. Au@Ag core-shell nanoparticles were synthesized by chemical deposition of a silver shell onto gold seed colloids followed by the self-assembly of 1-dodecanethiol onto the nanoparticle surface. The nanoparticles then formed a monolayer on the water surface of a Langmuir-Blodgett trough, and part of the silver shell was selectively etched away by the mixture of hydrogen peroxide and ammonia in the water subphase, where the etching was limited to the side of the nanoparticles that was in direct contact with water. The resulting Janus nanoparticles exhibited an asymmetrical distribution of silver on the surface of the gold

  6. Plasma-etching of 2D-poled glasses: A route to dry lithography

    Science.gov (United States)

    Alexandrov, S. E.; Lipovskii, A. A.; Osipov, A. A.; Reduto, I. V.; Tagantsev, D. K.

    2017-09-01

    The basis of a lithographic technique for producing glassy structures of diffractive optics, integrated optics, microfluidics, plasmonics, etc., is presented. The technique is based on the integration of two "dry" procedures: (1) glass polarization with structured (with relief surface) anodic electrode and (2) plasma-chemical etching of the poled glass. A pilot relief structure (that is, relief pattern 0.5 μm in depth) on the glass surface has been produced with the proposed technique.

  7. Morphology of latent and etched heavy ion tracks in radiation resistant polymers polyimide and poly(ethylene naphthalate)

    Science.gov (United States)

    Apel, P. Yu.; Blonskaya, I. V.; Oganessian, V. R.; Orelovitch, O. L.; Trautmann, C.

    2001-12-01

    The initial phase of chemical etching of ion tracks was studied in the radiation resistant polymers polyimide (PI) and poly(ethylene naphthalate) (PEN). Stacks of thin films were irradiated with Kr, Xe and Bi ions with energies of several MeV per nucleon. During the etching process, the evolution of the pore growth was monitored by conductometric measurements. Similar to earlier observations in other polymers, the etching process revealed the existence of two different radial damage zones, namely, a track core and a track halo. Compared to the virgin polymer, the etching rate in the core region is largely increased, whereas the halo exhibits a higher resistance to the chemical attack indicating radiation-induced cross-linking effects. Typical diameter of the central part of the latent track is measured for different stopping powers of the projectiles. The track to bulk etch ratio is found to reach 500-600 in PI and ˜10 000 in PEN. Due to this property, both materials seem to be suitable for producing micro- and even nanostructures with high aspect ratios.

  8. A 3-dimensional model for inductively coupled plasma etching reactors: Coil generated plasma asymmetries

    Energy Technology Data Exchange (ETDEWEB)

    Kushner, M.J.; Collison, W.Z.; Grapperhaus, M.J. [Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering

    1996-12-31

    Inductively Coupled Plasma (ICP) reactors are being developed as high plasma density, low gas pressure sources for etching and deposition of semiconductor materials. In this paper, the authors describe a 3-dimensional, time dependent model for ICP reactors whose intent is to provide an infrastructure to investigate asymmetries in plasma etching and deposition tools. The model is a 3-dimensional extension of a previously described 2-dimensional simulation called the Hybrid Plasma Equipment Model (HPEM). HPEM-3D consists of an electromagnetics module (EMM), a Boltzmann-electron energy module (BEM) and a fluid-chemical kinetics simulation (FKS). The inductively coupled electromagnetic fields are produced by the EMM. Results from HPEM-3D will be discussed for reactors using etching (Cl{sub 2}, BCl{sub 3}) and non-etching (Ar, Ar/N{sub 2}) gas mixtures, and which have geometrical asymmetries such as wafer clamps and load-lock bays. The authors show how details in the design of the coil, such as the value of the termination capacitance or number of turns, lead to azimuthal variations in the inductive electric field.

  9. Double hexagonal graphene ring synthesized using a growth-etching method

    Science.gov (United States)

    Liu, Jinyang; Xu, Yangyang; Cai, Hongbing; Zuo, Chuandong; Huang, Zhigao; Lin, Limei; Guo, Xiaomin; Chen, Zhendong; Lai, Fachun

    2016-07-01

    Precisely controlling the layer number, stacking order, edge configuration, shape and structure of graphene is extremely challenging but highly desirable in scientific research. In this report, a new concept named the growth-etching method has been explored to synthesize a graphene ring using the chemical vapor deposition process. The graphene ring is a hexagonal structure, which contains a hexagonal exterior edge and a hexagonal hole in the centre region. The most important concept introduced here is that the oxide nanoparticle derived from annealing is found to play a dual role. Firstly, it acts as a nucleation site to grow the hexagonal graphene domain and then it works as a defect for etching to form a hole. The evolution process of the graphene ring with the etching time was carefully studied. In addition, a double hexagonal graphene ring was successfully synthesized for the first time by repeating the growth-etching process, which not only confirms the validity and repeatability of the method developed here but may also be further extended to grow unique graphene nanostructures with three, four, or even tens of graphene rings. Finally, a schematic model was drawn to illustrate how the double hexagonal graphene ring is generated and propagated. The results shown here may provide valuable guidance for the design and growth of unique nanostructures of graphene and other two-dimensional materials.

  10. THE COMPARATIVE CHEMICAL EVOLUTION OF AN ISOLATED DWARF GALAXY: A VLT AND KECK SPECTROSCOPIC SURVEY OF WLM

    Energy Technology Data Exchange (ETDEWEB)

    Leaman, Ryan; Venn, Kim A.; Mendel, J. Trevor [Department of Physics and Astronomy, University of Victoria, Victoria, BC V8P 1A1 (Canada); Brooks, Alyson M. [California Institute of Technology, M/C 350-17, Pasadena, CA 91125 (United States); Battaglia, Giuseppina [INAF-Osservatorio Astronomico di Bologna, via Ranzani 1, I-40127 Bologna (Italy); Cole, Andrew A. [School of Mathematics and Physics, University of Tasmania, Private Bag 37, Hobart, TAS (Australia); Ibata, Rodrigo A. [Observatoire Astronomique, Universite de Strasbourg, CNRS, 11 rue de l' Universite, F-67000 Strasbourg (France); Irwin, Mike J. [Institute of Astronomy, University of Cambridge, Madingley Road, Cambridge CB3 0HA (United Kingdom); McConnachie, Alan W. [National Research Council of Canada, Herzberg Institute of Astrophysics, 5071 West Saanich Road, Victoria BC V9E 2E7 (Canada); Starkenburg, Else; Tolstoy, Eline, E-mail: rleaman@iac.es [Kapteyn Institute, University of Groningen, Postbus 800, 9700 AV Groningen (Netherlands)

    2013-04-20

    Building on our previous spectroscopic and photometric analysis of the isolated Local Group dwarf irregular (dIrr) galaxy WLM, we present a comparison of the metallicities of its red giant branch stars with respect to the well-studied Local Group dwarf spheroidal galaxies (dSphs) and Magellanic Clouds. We calculate a mean metallicity of [Fe/H] =-1.28 {+-} 0.02 and an intrinsic spread in metallicity of {sigma} = 0.38 {+-} 0.04 dex, similar to the mean and spread observed in the massive dSph Fornax and the Small Magellanic Cloud. Thus, despite WLM's isolated environment, its global metallicity still follows expectations for mass and its global chemical evolution is similar to other nearby luminous dwarf galaxies (gas-rich or gas-poor). The data also show a radial gradient in [Fe/H] of d[Fe/H]/dr{sub c} = -0.04 {+-} 0.04 dex r{sub c}{sup -1}, which is flatter than that seen in the unbiased and spatially extended surveys of dSphs. Comparison of the spatial distribution of [Fe/H] in WLM, the Magellanic Clouds, and a sample of Local Group dSphs shows an apparent dichotomy in the sense that the dIrrs have statistically flatter radial [Fe/H] gradients than the low angular momentum dSphs. The correlation between angular momentum and radial metallicity gradient is further supported when considering the Local Group dEs. This chemodynamic relationship offers a new and useful constraint for environment-driven dwarf galaxy evolution models in the Local Group.

  11. [Restoration of composite on etched stainless steel crowns. (1)].

    Science.gov (United States)

    Goto, G; Zang, Y; Hosoya, Y

    1990-01-01

    Object of investigation The retention of composite resin to etched stainless steel crowns was tested as a possible method for restoring primary anterior teeth. Method employed 1) SEM observation Stainless steel crowns (Sankin Manufacture Co.) were etched with an aqua resia to create surface roughness and undercut to retain the composite resin to the crowns. Etching times were 1, 2, 3, 5, 8, 10 and 20 minutes, then washed in a 70% alcohol solution using an ultrasonic washer and dried. A total of 96 etched samples and non etched control samples were observed through the scanning electron microscope (Hitachi 520). 2) Shear bond strength test Stainless steel crowns were etched in an aqua resia from 1 to 20 minutes, then washed and dried. Composite resin (Photo Clearfil A, Kuraray Co.) with the bonding agent was placed on the crowns and the shear bond strength was tested in 56 samples using an Autograph (DCS-500, Shimazu). Results 1) SEM observation showed that the etching surface of stainless steel crowns created surface roughness and undercut. The most desirable surface was obtained in the 3 to 5 minute etching time specimens. 2) The highest bond strength was obtained in a 3 minute etching specimen. It was 42.12 MPa, although 29.26 MPa in mean value. Conclusion Etching with an aqua resia increased the adherence of composite resin to the surface of stainless steel crowns.

  12. Pattern transfer on fused silica samples using sub-aperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

    2012-07-01

    In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using a Kaufman-typed ion source with NF{sub 3} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot and a layer formation of silicon nitride, handicaps the etching process mainly in the beam periphery where the sputtering contribution decrease. These side effects influence the pattern transfer of trench structures, produced in AZ MIR 701 photoresist by lithography on a 2'' fused silica plate, by changing the selectivity due to modified chemical reactions of the resist layer. Concerning this we investigate a RF-Ion source for sub aperture reactive ion beam applications and finally we examine the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

  13. Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Mogoda, A.S., E-mail: awad_mogoda@hotmail.com [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt); Ahmad, Y.H.; Badawy, W.A. [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt)

    2011-04-15

    Research highlights: {yields} Stain etching of p-Si in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4} was investigated. {yields} The electrical conductivity of the etched Si surfaces was measured using impedance technique. {yields} Scanning electron microscope and energy disperse X-ray were used to analyze the etched surfaces. {yields} Etching in aqueous HF solution containing HNO{sub 3} led to formation of a porous silicon layer. {yields} The formation of the porous silicon layer in HF/KMnO{sub 4} was accompanied by deposition of K{sub 2}SiF{sub 6} on the pores surfaces. - Abstract: Stain etching of p-type silicon in hydrofluoric acid solutions containing nitric acid or potassium permanganate as an oxidizing agent has been examined. The effects of etching time, oxidizing agent and HF concentrations on the electrochemical behavior of etched silicon surfaces have been investigated by electrochemical impedance spectroscopy (EIS). An electrical equivalent circuit was used for fitting the impedance data. The morphology and the chemical composition of the etched Si surface were studied using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) techniques, respectively. A porous silicon layer was formed on Si etched in HF solutions containing HNO{sub 3}, while etching in HF solutions containing KMnO{sub 4} led to the formation of a porous layer and simultaneous deposition of K{sub 2}SiF{sub 6} inside the pores. The thickness of K{sub 2}SiF{sub 6} layer increases with increasing the KMnO{sub 4} concentration and decreases as the concentration of HF increases.

  14. Direct evidence of reactive ion etching induced damages in Ge{sub 2}Sb{sub 2}Te{sub 5} based on different halogen plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Li, Juntao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Microsystem Technology Laboratory, Microsystem & Terahertz Research Center, Sichuan Province 610200 (China); Xia, Yangyang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China); Liu, Bo, E-mail: liubo@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Feng, Gaoming [United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China); Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Dan; Xu, Zhen; Wang, Weiwei [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China); Chan, Yipeng [United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China); Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2016-08-15

    Highlights: • The results of SEM and AFM directly showed that the surface of Cl2 etched samples were roughest with a Ge deficient damaged layer. • The XPS of Te 3d revealed the electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on CF4 etching GST films. • The sidewall of HBr etching GST is nearly vertical compared with others. • HBr is promising gas for GST etching in the fabrication of high-density memory devices. - Abstract: Chalcogenide glasses based on Ge-Te-Sb are processed using reactive ion etching (RIE) in the fabrication of phase change memory (PCM). These materials are known to be halogenated easily and apt to be damaged when exposed to halogen gas based plasmas which can cause severe halogenation-induced degradation. In this paper, we investigate the RIE induced damage of popular phase change material Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) in different halogen based plasmas (CF{sub 4}, Cl{sub 2} and HBr) highly diluted by argon. After blanket etching, results of scanning electron microscopy and atomic force microscopy directly showed that the surface of Cl{sub 2} etched samples were roughest with a Ge deficient damaged layer. X-ray photoelectron spectroscopy was performed to investigate the chemical shift of constituent elements. Selected scans over the valence band peaks of Te 3d revealed that electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on the GST etched by CF{sub 4}. The GST films masked with patterned TiN were also etched. High-resolution transmission electron microscopy and surface scan directly showed the line profile and the damaged layer. Almost vertical and smooth sidewall without damaged layer makes HBr a promising gas for GST etch in the fabrication of high-density memory devices.

  15. Histologic Evaluation of Human Pulp Response to Total Etch and Self Etch Adhesive Systems

    OpenAIRE

    Malekipour, Mohammad Reza; Razavi, Sayed Mohammad; Khazaei, Saber; Kazemi, Shantia; Behnamanesh, Maryam; Shirani, Farzaneh

    2013-01-01

    Background To investigate pulp response to the application of two types adhesive systems (total-etch and self-etch) in human premolar teeth. Materials and Methods Cavities limited to enamel walls in all margins with 2.5 mm depth were prepared on buccal surfaces of thirty three human premolars. The cavities were treated with the following adhesive. Single Bond (SB) and Prompt L-Pop (PLP). The teeth were extracted after 30 days and prepared due to histological technique. Results Pulp responses ...

  16. Extreme ultraviolet lithography mask etch study and overview

    Science.gov (United States)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  17. Er:YAG laser radiation etching of enamel

    Science.gov (United States)

    Dostalova, Tatjana; Jelinkova, Helena; Krejsa, Otakar; Hamal, Karel; Kubelka, Jiri; Prochazka, Stanislav

    1996-12-01

    This study compares the effects of acid treatment and Er:YAG laser radiation on the enamel. The permanent human molars were used. Oval cavities in the buccal surface were prepared and the edges of cavities were irradiated by Er:YAG radiation. The energy of laser was 105 mJ and repetition rate 1 Hz. The radiation was focused by CaF2 lens and the sample was placed in the focus. Ten samples were etched by 35 percent phosphoric acid during 60 s. Than cavities were filled with composite resin following manufacturers directions. By laser etching the structure enamel in section was rougher. The optimal connection between the enamel and composite resin was achieved in 75 percent by acid etching and in 79.2 percent by Er:YAG laser etching. Er:YAG laser etching could be alternative method for etching of enamel.

  18. Spin-on metal oxide materials with high etch selectivity and wet strippability

    Science.gov (United States)

    Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; McKenzie, Douglas; Rahman, Dalil; Cho, JoonYeon; Padmanaban, Munirathna; Petermann, Claire; Hong, SungEun; Her, YoungJun

    2016-03-01

    Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process.

  19. Track-etched membrane: dynamics of pore formation

    Science.gov (United States)

    Ferain, E.; Legras, R.

    1994-02-01

    The dynamics of pore formation during etching of heavy ion (Ar 9+ - 4.5 MeV/amu) irradiated bisphenol-A polycarbonate (PC) and polyethylene terephthalate (PET) films is determined by a conductivity cell. This work presents the theoretical basis of this method and describes the experimental procedure. The obtained results allow the determination of the track ( Vt) and bulk ( Vg) etch rates, and an estimate of the damage zone diameter in PC before etching.

  20. Bulk molybdenum field emitters by inductively coupled plasma etching.

    Science.gov (United States)

    Zhu, Ningli; Cole, Matthew T; Milne, William I; Chen, Jing

    2016-12-07

    In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.

  1. Dosimetry and microdosimetry using LET spectrometer based on the track-etch detector: radiotherapy Bremsstrahlung beam, onboard aircraft radiation field

    Energy Technology Data Exchange (ETDEWEB)

    Jadrnickova, I. [Dept. of Radiation Dosimetry, Nuclear Physics Institute AS CR, Na Truhlarce 39/64, 180 86 Prague 8 (Czech Republic); Dept. of Dosimetry and Application of Ionizing Radiation, Czech Technical University, Brehova 7, 115 19 Prague 1 (Czech Republic); Spurny, F. [Dept. of Radiation Dosimetry, Nuclear Physics Institute AS CR, Na Truhlarce 39/64, 180 86 Prague 8 (Czech Republic)

    2006-07-01

    The spectrometer of linear energy transfer (Let) based on the chemically etched poly-allyl-diglycol-carbonate (P.A.D.C.) track-etch detector was developed several years ago in our institute. This Let spectrometer enables determining Let of particles approximately from 10 to 700 keV/{mu}m. From the Let spectra, dose characteristics can be calculated. The contribution presents the Let spectra and other dosimetric characteristics obtained onboard a commercial aircraft during more than 6 months long exposure and in the 18 MV radiotherapy Bremsstrahlung beam. (authors)

  2. Influence of ageing on self-etch adhesives: one-step vs. two-step systems.

    Science.gov (United States)

    Marchesi, Giulio; Frassetto, Andrea; Visintini, Erika; Diolosà, Marina; Turco, Gianluca; Salgarello, Stefano; Di Lenarda, Roberto; Cadenaro, Milena; Breschi, Lorenzo

    2013-02-01

    The aim of this study was to evaluate microtensile bond strength (μTBS) to dentine, interfacial nanoleakage expression, and stability after ageing, of two-step vs. one-step self-etch adhesives. Human molars were cut to expose middle/deep dentine, assigned to groups (n = 15), and treated with the following bonding systems: (i) Optibond XTR (a two-step self-etch adhesive; Kerr), (ii) Clearfil SE Bond (a two-step self-etch adhesive; Kuraray), (iii) Adper Easy Bond (a one-step self-etch adhesive; 3M ESPE), and (iv) Bond Force (a one-step self-etch adhesive; Tokuyama). Specimens were processed for μTBS testing after 24 h, 6 months, or 1 yr of storage in artificial saliva at 37°C. Nanoleakage expression was examined in similarly processed additional specimens. At baseline the μTBS results ranked in the following order: Adper Easy Bond = Optibond XTR ≥Clearfil SE = Bond Force, and interfacial nanoleakage analysis showed Clearfil SE Bond = Adper Easy Bond = Optibond XTR> Bond Force. After 1 yr of storage, Optibond XTR, Clearfil SE Bond, and Adper Easy Bond showed higher μTBS and lower interfacial nanoleakage expression compared with Bond Force. In conclusion, immediate bond strength, nanoleakage expression, and stability over time were not related to the number of steps of the bonding systems, but to their chemical formulations. © 2012 Eur J Oral Sci.

  3. Lateral electrochemical etching of III-nitride materials for microfabrication

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jung

    2017-02-28

    Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

  4. Advanced plasma etching processes for dielectric materials in VLSI technology

    Science.gov (United States)

    Wang, Juan Juan

    Manufacturable plasma etching processes for dielectric materials have played an important role in the Integrated Circuits (IC) industry in recent decades. Dielectric materials such as SiO2 and SiN are widely used to electrically isolate the active device regions (like the gate, source and drain from the first level of metallic interconnects) and to isolate different metallic interconnect levels from each other. However, development of new state-of-the-art etching processes is urgently needed for higher aspect ratio (oxide depth/hole diameter---6:1) in Very Large Scale Integrated (VLSI) circuits technology. The smaller features can provide greater packing density of devices on a single chip and greater number of chips on a single wafer. This dissertation focuses on understanding and optimizing of several key aspects of etching processes for dielectric materials. The challenges are how to get higher selectivity of oxide/Si for contact and oxide/TiN for vias; tight Critical Dimension (CD) control; wide process margin (enough over-etch); uniformity and repeatability. By exploring all of the parameters for the plasma etch process, the key variables are found and studied extensively. The parameters investigated here are Power, Pressure, Gas ratio, and Temperature. In particular, the novel gases such as C4F8, C5F8, and C4F6 were studied in order to meet the requirements of the design rules. We also studied CF4 that is used frequently for dielectric material etching in the industry. Advanced etch equipment was used for the above applications: the medium-density plasma tools (like Magnet-Enhanced Reactive Ion Etching (MERIE) tool) and the high-density plasma tools. By applying the Design of Experiments (DOE) method, we found the key factors needed to predict the trend of the etch process (such as how to increase the etch rates, selectivity, etc.; and how to control the stability of the etch process). We used JMP software to analyze the DOE data. The characterization of the

  5. State of the art etch-and-rinse adhesives

    OpenAIRE

    Pashley, David H.; Tay, Franklin R.; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M.; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2010-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti...

  6. Effects of etching time on enamel bond strengths.

    Science.gov (United States)

    Triolo, P T; Swift, E J; Mudgil, A; Levine, A

    1993-12-01

    This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

  7. Pre-etching vs. grinding in promotion of adhesion to intact enamel using self-etch adhesives.

    Science.gov (United States)

    Nazari, Amir; Shimada, Yasushi; Sadr, Alireza; Tagami, Junji

    2012-01-01

    This study was aimed to determine the effectiveness of grinding and pre-etching in promotion of adhesion to human intact enamel using the self-etch adhesive (SEA) Adper Easy Bond (3M ESPE). Etch-and-rinse adhesive Adper Single Bond (3M ESPE) served as control. Composite cylinders (AP-X Kuraray) were built and after 24 h micro-shear bond strengths (MSBS) were measured. Bonding interfaces were evaluated under scanning electron microscope (SEM). For evaluation of average roughness (Ra) and morphological analysis, treated enamel surfaces were observed under SEM and confocal laser scanning microscope (CLSM) with 3D surface profiling. Highest bond strengths were obtained by pre-etching and grinding showed a less significant role. Phosphoric acid (PA) etching compare to grinding created significantly rougher surface (Ra: 0.72 and 0.43 µm respectively). Therefore, this study recommends pre-etching the intact enamel prior to application of the adhesive instead of grinding.

  8. Studies on a novel mask technique with high selectivity and aspect-ratio patterns for HgCdTe trenches ICP etching

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Li, Y.; Huang, J.; Yin, W. T.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2012-06-01

    A novel mask technique, combining high selectivity silicon dioxide patterns over high aspect-ratio photoresist (PR) patterns has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal plane arrays (IRFPAs). High-density silicon dioxide film covering high aspect-ratio PR patterns was deposited at the temperature of 80°C and silicon dioxide film patterns over high aspect-ratio PR patterns of HgCdTe etching samples was developed by standard photolithography and wet chemical etch. Scanning electron microscopy (SEM) shows that the surfaces of inductively coupled plasma (ICP) etched samples are quite clean and smooth. The etching selectivity between the novel mask and HgCdTe of the samples is increased to above 32: 1 while the side-wall impact of etching plasma is suppressed by the high aspect ratio patterns. These results show that the combined patterning of silicon dioxide film and thick PR film is a readily available and promising masking technique for HgCdTe mesa etching.

  9. A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

    NARCIS (Netherlands)

    Roozeboom, F.; Kniknie, B.J.; Lankhorst, A.M.; Winands, G.; Knaapen, R.; Smets, M.; Poodt, P.W.G.; Dingemans, G.; Keuning, W.; Kessels, W.M.M.

    2012-01-01

    Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In

  10. Development of Polysulfone Hollow Fiber Porous Supports for High Flux Composite Membranes: Air Plasma and Piranha Etching

    OpenAIRE

    Ilya Borisov; Anna Ovcharova; Danila Bakhtin; Stepan Bazhenov; Alexey Volkov; Rustem Ibragimov; Rustem Gallyamov; Galina Bondarenko; Rais Mozhchil; Alexandr Bildyukevich; Vladimir Volkov

    2017-01-01

    For the development of high efficiency porous supports for composite membrane preparation, polysulfone (PSf) hollow fiber membranes (outer diameter 1.57 mm, inner diameter 1.12 mm) were modified by air plasma using the low temperature plasma treatment pilot plant which is easily scalable to industrial level and the Piranha etch (H2O2 + H2SO4). Chemical and plasma modification affected only surface layers and did not cause PSf chemical structure change. The modifications led to surface roughne...

  11. Real-time monitoring of reactive species in downstream etch reactor by VUV broad-band absorption spectroscopy

    Science.gov (United States)

    Soriano, R.; Vallier, L.; Cunge, G.; Sadeghi, N.

    2016-09-01

    Plasma etching of nanometric size, high aspect-ratio structures is more challenging at each new technological node. Remote plasmas are beginning to find use when damages on nanostructures by ion bombardment become critical or when etching with high selectivity on different materials present on the wafer is necessary (i . e . tungsten oxide etching with fluorine and hydrogen containing plasmas in remote reactor from AMAT). Furthermore, it is expected that downstream plasma will replace many wet chemical etching processes to alleviate the issue of pattern collapses caused by capillary forces when nanometer size high aspect ratio structures are immersed in liquids. In these downstream plasmas, radicals are the main active species and a control of their density is of prime importance. Most of gases used and radicals produced in etching plasmas (HBr, BrCl, Br2, NF3, CH2F2,...) have strong absorption bands in the vacuum UV spectral region and we have shown that very low concentration of these species can be detected by VUV absorption. We have recently improved the technique by using a VUV CCD camera, instead of the PMT, which render possible the Broad-Band absorption spectroscopy in the 120-200 nm range, with a deuterium lamp, or a laser produced xenon arc lamp as light source. The multi-spectral detection ability of the CCD reduces the acquisition time to less than 1 second and can permit the real time control of the process control.

  12. Etching with atomic precision by using low electron temperature plasma

    Science.gov (United States)

    Dorf, L.; Wang, J.-C.; Rauf, S.; Monroy, G. A.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2017-07-01

    There has been a steady increase in sub-nm precision requirement for many critical plasma etching processes in the semiconductor industry. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in conventional radio-frequency (RF) plasma processing systems, even during layer-by-layer or ‘atomic layer’ etch. To meet these increasingly stringent requirements, it is necessary to have an accurate control over ion energy and ion/radical composition during plasma processing. In this work, a new plasma etch system designed to facilitate atomic precision plasma processing is presented. An electron sheet beam parallel to the substrate surface is used to produce a plasma in this system. This plasma has a significantly lower electron temperature T e ~ 0.3 eV and ion energy E i  plasmas. Electron beam plasmas also have a higher ion-to-radical ratio compared to RF plasmas, so this plasma etch system employs an independent radical source for accurate control over relative ion and radical concentrations. A low frequency RF bias capability that allows control of ion energy in the 2-50 eV range is another important component of this plasma etch system. The results of etching of a variety of materials and structures in this low-electron temperature plasma system are presented in this study: (1) layer-by-layer etching of p-Si at E i ~ 25-50 eV using electrical and gas cycling is demonstrated; (2) continuous etching of epi-grown µ-Si in Cl2-based plasmas is performed, showing that surface damage can be minimized by keeping E i  etching at low E i.

  13. Numerical study of capacitive coupled HBr/Cl2 plasma discharge for dry etch applications

    Science.gov (United States)

    Gul, Banat; Ahmad, Iftikhar; Zia, Gulfam; Aman-ur-Rehman

    2016-09-01

    HBr/Cl2 plasma discharge is investigated to study the etchant chemistry of this discharge by using the self-consistent fluid model. A comprehensive set of gas phase reactions (83 reactions) including primary processes such as excitation, dissociation, and ionization are considered in the model along with 24 species. Our findings illustrate that the densities of neutral species (i.e., Br, HCl, Cl, H, and H2) produced in the reactor are higher than charged species (i.e., Cl2+, Cl-, HBr+, and Cl+). Density profile of neutral and charged species followed bell shaped and double humped distributions, respectively. Increasing Cl2 fraction in the feedback gases (HBr/Cl2 from 90/10 to 10/90) promoted the production of Cl, Cl+, and Cl2+ in the plasma, indicating that chemical etching pathway may be preferred at high Cl-environment. These findings pave the way towards controlling/optimizing the Si-etching process.

  14. Improvement of silicon nanowire solar cells made by metal catalyzed electroless etching and nano imprint lithography

    Science.gov (United States)

    Chen, Junyi; Subramani, Thiyagu; Jevasuwan, Wipakorn; Fukata, Naoki

    2017-04-01

    Silicon nanowires were fabricated by metal catalyzed electroless etching (MCEE) and nano imprint lithography (NIL), then a shell p-type layer was grown by thermal chemical vapor deposition (CVD) techniques. To reduce back surface recombination and also to activate the dopant, we used two techniques, back surface field (BSF) treatment and rapid thermal annealing (RTA), to improve device performance. In this study, we investigated BSF and RTA treatments in silicon nanowire solar cells, and improved the device performance and efficiency from 4.1 to 7.4% (MCEE device) and from 1.1 to 6.6% (NIL device) after introducing BSF and RTA treatments. Moreover, to achieve better metal contact without sacrificing the reflectance after the shell formation, the selective-area etching method was investigated. Finally, after combining all processes, silicon nanowire solar cells fabricated via the MCEE process exhibited 8.7% efficiency.

  15. Wet-Etch Figuring Optical Figuring by Controlled Application of Liquid Etchant

    Energy Technology Data Exchange (ETDEWEB)

    Britten, J

    2001-02-13

    WET-ETCH FIGURING (WEF) is an automated method of precisely figuring optical materials by the controlled application of aqueous etchant solution. This technology uses surface-tension-gradient-driven flow to confine and stabilize a wetted zone of an etchant solution or other aqueous processing fluid on the surface of an object. This wetted zone can be translated on the surface in a computer-controlled fashion for precise spatial control of the surface reactions occurring (e.g. chemical etching). WEF is particularly suitable for figuring very thin optical materials because it applies no thermal or mechanical stress to the material. Also, because the process is stress-free the workpiece can be monitored during figuring using interferometric metrology, and the measurements obtained can be used to control the figuring process in real-time--something that cannot be done with traditional figuring methods.

  16. Etched FBG coated with polyimide for simultaneous detection the salinity and temperature

    Science.gov (United States)

    Luo, Dong; Ma, Jianxun; Ibrahim, Zainah; Ismail, Zubaidah

    2017-06-01

    In marine environment, concrete structures can corrode because of the PH alkalinity of concrete paste; and the salinity PH is heavily related with the concentration of salt in aqueous solutions. In this study, an optical fiber salinity sensor is proposed on the basis of an etched FBG (EFBG) coated with a layer of polyimide. Chemical etching is employed to reduce the diameter of FBG and to excite Cladding Mode Resonance Wavelengths (CMRWs). CMRW and Fundamental Mode Resonance Wavelength (FMRW) can be used to measure the Refractive index (RI) and temperature of salinity. The proposed sensor is then characterized with a matrix equation. Experimental results show that FMRW and 5th CMRW have the detection sensitivities of 15.407 and 125.92 nm/RIU for RI and 0.0312 and 0.0435 nm/°C for temperature, respectively. The proposed sensor can measure salinity and temperature simultaneously.

  17. In situ definition of semiconductor structures by selective area growth and etching

    Science.gov (United States)

    Colas, E.; Caneau, C.; Frei, M.; Clausen, E. M., Jr.; Quinn, W. E.; Kim, M. S.

    1991-10-01

    Selective area growth (etching) by low-pressure organometallic chemical vapor deposition (LP-OMCVD) is utilized to intentionally modulate the local growth (etch) rate by choosing the pattern of dielectric-masked areas, thereby defining III-V semiconductor structures in situ. This technique is applied to tune the emission wavelength of a GaAs/AlGaAs quantum well structure, and to obtain InP/InGaAs superlattice structures tapered in thickness with growth rate increases as high as 800%, suitable for integrated optics applications. In contrast, selective deposition by organometallic molecular beam epitaxy (OMMBE) does not produce growth rate enhancements, thereby preventing similar in situ definition schemes but allowing to integrate structures with optimized nominal thicknesses.

  18. [INVITED] On the mechanisms of single-pulse laser-induced backside wet etching

    Science.gov (United States)

    Tsvetkov, M. Yu.; Yusupov, V. I.; Minaev, N. V.; Akovantseva, A. A.; Timashev, P. S.; Golant, K. M.; Chichkov, B. N.; Bagratashvili, V. N.

    2017-02-01

    Laser-induced backside wet etching (LIBWE) of a silicate glass surface at interface with a strongly absorbing aqueous dye solution is studied. The process of crater formation and the generated optoacoustic signals under the action of single 5 ns laser pulses at the wavelength of 527 nm are investigated. The single-pulse mode is used to avoid effects of incubation and saturation of the etched depth. Significant differences in the mechanisms of crater formation in the "soft" mode of laser action (at laser fluencies smaller than 150-170 J/cm2) and in the "hard" mode (at higher laser fluencies) are observed. In the "soft" single-pulse mode, LIBWE produces accurate craters with the depth of several hundred nanometers, good shape reproducibility and smooth walls. Estimates of temperature and pressure of the dye solution heated by a single laser pulse indicate that these parameters can significantly exceed the corresponding critical values for water. We consider that chemical etching of glass surface (or molten glass) by supercritical water, produced by laser heating of the aqueous dye solution, is the dominant mechanism responsible for the formation of crater in the "soft" mode. In the "hard" mode, the produced craters have ragged shape and poor pulse-to-pulse reproducibility. Outside the laser exposed area, cracks and splits are formed, which provide evidence for the shock induced glass fracture. By measuring the amplitude and spectrum of the generated optoacoustic signals it is possible to conclude that in the "hard" mode of laser action, intense hydrodynamic processes induced by the formation and cavitation collapse of vapor-gas bubbles at solid-liquid interface are leading to the mechanical fracture of glass. The LIBWE material processing in the "soft" mode, based on chemical etching in supercritical fluids (in particular, supercritical water) is very promising for structuring of optical materials.

  19. Electronegativity-dependent tin etching from thin films

    NARCIS (Netherlands)

    Pachecka, M.; Sturm, J.M.; Kruijs, van de R.W.E.; Lee, C.J.; Bijkerk, F.

    2016-01-01

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electron

  20. Orthodox etching of HVPE-grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  1. Reactive ion etching of quartz and Pyrex for microelectronic applications

    Science.gov (United States)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

  2. Versatile apparatus for etching scanning tunneling microscope tips

    Science.gov (United States)

    Fiering, J. O.; Ellis, F. M.

    1990-12-01

    We have developed an apparatus for easy and consistent etching of small tips suitable for use with a scanning tunneling microscope. Its unique features are free access to the etching region and a continuous supply of electrolyte for the production of many tips in succession.

  3. Study of the reduction in detection limits of track detectors used for {sup 10}B(n,α){sup 7}Li reaction rate measure through annealing and chemical etching experiments; Estudo da reducao nos limites de deteccao de detectores de tracos utilizados na medida de taxa de reacao {sup 10}B(n, α){sup 7}Li atraves de experimentos de annealing e ataque quimico

    Energy Technology Data Exchange (ETDEWEB)

    Vasconcellos, Herminiane L.; Smilgys, Barbara; Guedes, Sandro, E-mail: hluizav@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil). Instituto de Fisica Gleb Wataghin; Castro, Vinicius A. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Engenharia Nuclear

    2013-08-15

    The Boron Neutron Capture Therapy (BNCT) is an experimental radiotherapy for cancer treatment. It is based on {sup 10}B(n, α){sup 7}Li reaction, which can be measured by track detectors capable of recording events that strike them. With this recording, it is possible to determine the number of alpha particles and recoiling Lithium-7 nucleus, reaction products, and from this information, which amount of radiation dose a patient is exposed to. In this work, PADC detectors were characterized, irradiated at the IEA-R1 IPEN/CNEN reactor to assess the contribution of the{sup 10}B(n, α){sup 7}Li reaction and protons from fast neutron scattering with the elements that compounds the tissue. With the aim of reducing the proton background, the detectors were subjected to heating experiments at 80°C for periods in the range 0-100 hours. This was done in order to restore partially modified structure of the detector, causing a reduction in the size and density of tracks. This effect is known as annealing. For the visualization of tracks at microscope, detectors were made three chemical attacks with sodium hydroxide (NaOH) for 30, 60 and 90 minutes at 70°C. It was observed a reduction in the track density achieving a plateau heating time of 50 hours. For detectors that have not undergone annealing and were etched with another etchant, PEW solution, a reduction of 87% in track density was obtained. (author)

  4. A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

    Energy Technology Data Exchange (ETDEWEB)

    Gul, Banat, E-mail: banatgul@gmail.com [Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650 (Pakistan); Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp (Belgium); Aman-ur-Rehman, E-mail: amansadiq@gmail.com [Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650 (Pakistan)

    2015-10-15

    Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBr by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.

  5. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    Directory of Open Access Journals (Sweden)

    Ajay Kumar

    2014-02-01

    Full Text Available This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that the light transmission through etched fiber at 1550 nm wavelength optical source becomes highly temperature sensitive, compared to the temperature insensitive behavior observed in un-etched fiber for the range on 30ºC to 100ºC at 1550 nm. The sensor response under temperature cycling is repeatable and, proposed to be useful for low frequency analogue signal transmission over optical fiber by means of inline thermal modulation approach.

  6. Effects of Etch-and-Rinse and Self-etch Adhesives on Dentin MMP-2 and MMP-9

    Science.gov (United States)

    Mazzoni, A.; Scaffa, P.; Carrilho, M.; Tjäderhane, L.; Di Lenarda, R.; Polimeni, A.; Tezvergil-Mutluay, A.; Tay, F.R.; Pashley, D.H.; Breschi, L.

    2013-01-01

    Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives. PMID:23128110

  7. Clinical effectiveness of self-etching adhesives with or without selective enamel etching in noncarious cervical lesions: A systematic review

    Directory of Open Access Journals (Sweden)

    Wei Qin

    2014-12-01

    Conclusion: Previous enamel etching resulted in fewer marginal defects and marginal discoloration, compared with using the SE approach alone. For restoration retention, the differences between the two groups were not significant. Additional longer follow ups and large-scale investigations are expected to assess possible advantages of selective enamel etching in NCCL restorations.

  8. Thermal neutron dosimetry using electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Su, S.J.; Sanders, M.E.; Morgan, K.Z.

    1979-07-10

    This study demonstrates the feasibility of using high LET particle radiators to determine the thermal neutron dose by reaction particle registration in low background polycarbonate foils using electrochemical etching. When used in conjunction with the already proven fast neutron recoil particle track registration technique, a viable fast and thermal neutron dosimeter is realized with the advantages of being: non-fading, insensitive to low LET radiation reactions, inexpensive in both processing and materials, useable over a wide dose range, a permanant record and good reproducibility, highly sensitive, and tissue equivalent and a dose equivalent response over a wide range. Most importantly, it finally provides a simple and reliable dosimeter for both the fast and thermal neutron components.

  9. Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2016-07-15

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si

  10. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    Science.gov (United States)

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  11. Microsensors based on a whispering gallery mode in AlGaN microdisks undercut by hydrogen-environment thermal etching.

    Science.gov (United States)

    Kouno, Tetsuya; Sakai, Masaru; Takeshima, Hoshi; Suzuki, Sho; Kikuchi, Akihiko; Kishino, Katsumi; Hara, Kazuhiko

    2017-04-20

    AlGaN microdisks were fabricated via a top-down process using electron-beam lithography, inductively coupled plasma reactive-ion etching, and hydrogen-environment thermal etching from commercial epitaxial wafers with a 100-300 nm thick AlGaN layer grown on a c-plane GaN layer by metal-organic chemical vapor deposition. The hydrogen-environment thermal etching performed well in undercutting the AlGaN microdisks owing to the selective etching for the GaN layer. The AlGaN microdisks acted as the whispering gallery mode (WGM) optical microresonators, exhibiting sharp resonant peaks in room temperature photoluminescence spectra. The evanescent component of the whispering gallery mode (WGM) is influenced by the ambient condition of the microdisk, resulting in the shift of the resonant peaks. The phenomenon is considered to be used for microsensors. Using the WGM in the AlGaN microdisks, we demonstrated microsensors and a microsensor system, which can potentially be used to evaluate biological and chemical actions in a microscale area in real time.

  12. Methods of analysis by the U.S. Geological Survey National Water Quality Laboratory : determination of nonpurgeable suspended organic carbon by wet-chemical oxidation and infrared spectrometry

    Science.gov (United States)

    Burkhardt, Mark R.; Kammer, James A.; Jha, Virendra K.; O'Mara-Lopez, Peggy G.; Woodworth, Mark T.

    1997-01-01

    Precision and accuracy results are described for the determination of nonpurgeable suspended organic carbon (SOC) by silver-filter filtration, wet-chemical oxidation, and infrared determination of hte resulting carbon dioxide (CO2) used at the U.S. Geological Survey's nationalWater Quality Laboratory. An aliquot of raw water isfiltered through a 0.45-micrometer silver filter. The trapped organic material is oxidized using phosphoric acid and potassium persulfate in a scaled glass ampule,and the rseulting CO2 is measured by an infrared CO2 detector. The amount of CO3 is proportional to the concentration of chemically oxidizable nonpurgeable organic carbon in the sample. The SOC method detection limit for routine analysis is 0.2 milligram per liter. The average percent recovery is 97.1 percent and the average standard deviation is 11 percent.

  13. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  14. E-beam inspection of EUV mask defects: To etch or not to etch?

    Science.gov (United States)

    Bonam, Ravi; Tien, Hung-Yu; Park, Chanro; Halle, Scott; Wang, Fei; Corliss, Daniel; Fang, Wei; Jau, Jack

    2014-04-01

    EUV Lithography is aimed to be inserted into mainstream production for sub-20nm pattern fabrication. Unlike conventional optical lithography, frequent defectivity monitors (adders, repeaters etc.) are required in EUV lithography. Due to sub-20nm pattern and defect dimensions e-beam inspection of critical pattern areas is essential for yield monitor. In previous work we showed sub-10nm defect detection sensitivity1 on patterned resist wafers. In this work we report 8-10× improvement in scan rates of etched patterns compared to resist patterns without loss in defect detection sensitivity. We observed good etch transfer of sub-10nm resist features. A combination of smart scan strategies with improved etched pattern scan rates can further improve throughput of e-beam inspection. An EUV programmed defect mask with Line/Space, Contact patterns was used to evaluate printability of defects and defect detection (Die-Die and Die-Database) capability of the e-beam inspection tool. Defect inspection tool parameters such as averaging, threshold value were varied to assess its detection capability and were compared to previously obtained results on resist patterns.

  15. Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver

    Science.gov (United States)

    Chen, Chia-Yun; Wong, Ching-Ping

    2014-12-01

    Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag+-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag+ and NO3- ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag

  16. Chemical Composition of Ferromanganese Crusts in the World Ocean: A Review and Comprehensive Database. U.S. Geological Survey.

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The USGS Ferromanganese Crust data set was compiled by F.T. Manheim and C.M. Lane-Bostwick of the U.S. Geological Survey, Woods Hole, MA. The data set consists of...

  17. Nanoporous Gallium Nitride Through Anisotropic Metal-Assisted Electroless Photochemical Wet Etching Technique

    Science.gov (United States)

    Perumal, R.; Hassan, Z.

    2016-12-01

    Nanoporous gallium nitride (GaN) has many potential applications in light-emitting diodes (LEDs), photovoltaics, templates and chemical sensors. This article reports the porosification of GaN through UV enhanced metal-assisted electroless photochemical wet etching technique using three different acid-based etchants and platinum served as catalyst for porosification. The etching process was conducted at room temperature for a duration of 90min. The morphological, structural, spectral and optical features of the developed porous GaN were studied with appropriate characterization techniques and the obtained results were presented. Field emission scanning electron micrographs exhibited the porosity nature along with excellent porous network of the etched samples. Structural studies confirmed the mono crystalline quality of the porous nanostructures. Raman spectral analyzes inferred the presenting phonon modes such as E2 (TO) and A1 (LO) in fabricated nanoporous structures. The resulted porous nanostructures hold the substantially enhanced photoluminescence intensity compared with the pristine GaN epitaxial film that is interesting and desirable for several advances in the applications of Nano-optoelectronic devices.

  18. Plasma etching on large-area mono-, multi- and quasi-mono crystalline silicon

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk; Boisen, Anja

    2013-01-01

    We use plasma etched Black Si (BS)[1][2] nanostructures to achieve low reflectance due to the resulting graded refractive index at the Si-air interface. The goal of this investigation is to develop a suitable texturing method for Si solar cells. Branz et al. [3]report below 3% average reflectance...... for their 16.8% efficient black Si cell using a metal-assisted, chemical etching method on FZ mono-crystalline Si substrates. Yoo et al. [4] use RIE similar to this work on large-area, multi-crystalline Si cells and achieve a 16.1% efficiency despite a relatively high reflectance of 13.3%. Despite several...... advantages such as; (i) excellent light trapping, (ii) dry, single-sided and scalable process method and (iii) etch independence on crystallinity of Si, RIE-texturing has so far not been proven superior to standard wet texturing, primarily as a result of lower power conversion efficiency due to increased...

  19. Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching.

    Science.gov (United States)

    Yamin, Tony; Wissberg, Shai; Cohen, Hagai; Cohen-Taguri, Gili; Sharoni, Amos

    2016-06-15

    The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change.

  20. Growing and Etching MoS2 on Carbon Nanotube Film for Enhanced Electrochemical Performance

    Directory of Open Access Journals (Sweden)

    Weiyu Xu

    2016-09-01

    Full Text Available In this work we directly synthesized molybdenum disulfide (MoS2 nanosheets on carbon nanotube film (MoS2@CNT via a two-step chemical vapor deposition method (CVD. By etching the obtained MoS2@CNT into 10% wt HNO3, the morphology of MoS2 decorated on CNT bundles was modulated, resulting in more catalytic active MoS2 edges being exposed for significantly enhanced electrochemical performance. Our results revealed that an 8 h acid etching sample exhibited the best performance for the oxygen evolution reaction, i.e., the current density reached 10 mA/cm2 under 375 mV over-potential, and the tafel slope was as low as 94 mV/dec. The enhanced behavior was mainly originated from the more catalytic sites in MoS2 induced by the acid etching treatment and the higher conductivity from the supporting CNT films. Our study provides a new route to produce two-dimensional layers on CNT films with tunable morphology, and thus may open a window for exploring its promising applications in the fields of catalytic-, electronic-, and electrochemical-related fields.

  1. Improving the catalytic activity of semiconductor nanocrystals through selective domain etching.

    Science.gov (United States)

    Khon, Elena; Lambright, Kelly; Khnayzer, Rony S; Moroz, Pavel; Perera, Dimuthu; Butaeva, Evgeniia; Lambright, Scott; Castellano, Felix N; Zamkov, Mikhail

    2013-05-01

    Colloidal chemistry offers an assortment of synthetic tools for tuning the shape of semiconductor nanocrystals. While many nanocrystal architectures can be obtained directly via colloidal growth, other nanoparticle morphologies require alternative processing strategies. Here, we show that chemical etching of colloidal nanoparticles can facilitate the realization of nanocrystal shapes that are topologically inaccessible by hot-injection techniques alone. The present methodology is demonstrated by synthesizing a two-component CdSe/CdS nanoparticle dimer, constructed in a way that both CdSe and CdS semiconductor domains are exposed to the external environment. This structural morphology is highly desirable for catalytic applications as it enables both reductive and oxidative reactions to occur simultaneously on dissimilar nanoparticle surfaces. Hydrogen production tests confirmed the improved catalytic activity of CdSe/CdS dimers, which was enhanced 3-4 times upon etching treatment. We expect that the demonstrated application of etching to shaping of colloidal heteronanocrystals can become a common methodology in the synthesis of charge-separating nanocrystals, leading to advanced nanoparticles architectures for applications in areas of photocatalysis, photovoltaics, and light detection.

  2. Generation of Air Microplasma Jet and Its Application to Local Etching of Polyimide Films

    Science.gov (United States)

    Yoshiki, Hiroyuki

    2006-06-01

    An air microplasma jet (air μ-PJ) was generated at the tip of a stainless steel surgical needle with outer diameters of 0.4-0.7 mm at air flow rates of 0.3-1.0 l/min and RF (13.56 MHz) powers of 4-14 W, in which the air μ-PJ was operated without generating arc discharge at atmospheric pressure. The needle acts as both a powered electrode and a narrow gas nozzle. The peak-to-peak voltages Vpp were 1.5-1.7 kV and the temperatures of the plasma-irradiated spot (φetching of polyimide films with a thickness of 0.025 mm. A polyimide etch rate of approximately 5 μm/s was attained using a 0.4-mm-φ needle electrode at a RF power of 8 W. The etching mechanism was not based on a thermal effect but on a chemical reaction of oxygen atoms. Furthermore, the local removal of a polyamide-imide insulator film coated on a copper winding wire (φfilm to a copper wire was achieved at a RF power of 7 W and plasma irradiation times of 5-20 s.

  3. Fabry-Perot interferometer based on etched side-hole fiber for microfluidic refractive index sensing

    Science.gov (United States)

    Wu, Shengnan; Yan, Guofeng; Zhou, Bin; He, Sailing

    2015-08-01

    In this paper, we present a novel fiber-optic open-cavity Fabry-Perot interferometer (FPI), which is specially designed for microfluidic refractive index (RI) sensing. An etching Side-hole fiber (SHF) was sandwiched between in two single-mode-fibers (SMF) and then a cavity was opened up by chemical etching method in the SHF. The minute order of the etching process endow such FPIs with low cost and ease of fabrication. For further microfluidic sensing test, the FPI was integrated with a cross microfluidic slit that was fabricated through photolithography. The refractive index response of the FPI was characterized using sodium hydroxide solution with RI range from 1.3400 to 1.3470. Experimental results show that FPIs with different length of open-cavity have the similar liner RI response with different RI sensitivities. The optimal RI sensitivity of more than 1138 nm/RI can be achieved with open-cavity length of 56 μm. The temperature response was also investigated, which shows that FPIs exhibit a very low temperature cross-sensitivities of 4.00 pm/ °C and 1.95 pm/ °C corresponding FPIs with cavity length of 123 μm and 56 μm, respectively. Such good performance renders the FPI a promising in-line microfluidic sensor for temperature-insensitive RI sensing.

  4. Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching

    Science.gov (United States)

    Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

    2016-06-01

    Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm-2 due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

  5. Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching.

    Science.gov (United States)

    Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

    2016-06-24

    Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm(-2) due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

  6. Patterned Platinum Etching Studies in an Argon High Density Plasma

    Science.gov (United States)

    Delprat, Sébastien; Chaker, Mohamed; Margot, Joëlle; Pépin, Henri; Tan, Liang; Smy, Tom

    1998-10-01

    A high-density surface-wave Ar plasma operated in the low pressure regime is used to study pure physical etching characteristics of platinum thin films. The platinum samples are RF biased so as to obtain a maximum DC self-bias voltage of 150 V. The sputter-etching characteristics are investigated as a function of the magnetic field intensity, the self-bias voltage and the gas pressure. At 1 mtorr, the etch rate is found to be a unique linear function of both the self-bias voltage and the ion density, independently of the magnetic field intensity value. However, even though the ion density increases, the etch rate is found to decrease with increasing pressure. In the low pressure regime, etch rates as high as 2000 A/min are obtained with a good selectivity over resist. Without any optimization of the etching process, we were able to etch 0.5 micron Pt trenches, 0.6 micron thick yielding fence-free profiles and sidewall angles (75º) that already meets the present industrial requirements of NVRAM technology.

  7. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi...... of the change in free energy of adsorption, the Pourbaix diagram, the electrochemical double- layer thickness and silicon dopant type, and concentration. (C) 2004 The Electrochemical Society.......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...

  8. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  9. Sealing effectiveness of etch-and-rinse vs self-etching adhesives after water aging: influence of acid etching and NaOCl dentin pretreatment.

    Science.gov (United States)

    Monticelli, Francesca; Toledano, Manuel; Silva, Ana Simoes; Osorio, Estrella; Osorio, Raquel

    2008-06-01

    To determine the marginal leakage of Class V restorations bonded with etch-and-rinse and self-etching adhesives applied after different dentin pretreatments over a maximum storage time of 24 months. Standardized mixed Class V cavities (5 mm x 3 mm and 2 mm deep) were cut on the buccal and lingual surfaces of 180 human molars. Two self-etching adhesive systems, Adper Prompt L-Pop (3M ESPE) and Clearfil SE Bond (Kuraray), and one etch-and-rinse bonding agent (One Step, Bisco) were applied as follows: 1. according to manufacturers' instructions; 2. after 37% H3PO4 etching for 15 s; 3. after 37% H3PO4 etching for 15 s and 5% NaOCl aq application for 2 min. Teeth were stored for 24 h, 6, 12, and 24 months in saline solution at 37 degrees C before being stained in 0.5% solution of basic fuchsine. Dye penetration was scored on a 0 to 3 ordinal scale and analyzed with the Kruskal-Wallis H test (p < 0.05), Mann-Whitney U-test (p < 0.01), and Wilcoxon paired test (p < 0.05). Significant differences exist after using the tested adhesives at dentin and enamel margins. Adhesive type and substrate pretreatment had a significant effect on the long-term sealing of Class V restorations, and aging increased leakage overtime. The extent of leakage at the enamel margins was lower than that at dentin margins. One Step recorded the best results after 24 months. Optimal adhesion of restorative materials to enamel and dentin is hampered by a reduction in marginal seal over time. Alternative dentinal treatments (etching or collagen removal) might increase bonding efficacy, depending on the adhesive system used.

  10. Adhesion performance of new hydrolytically stable one-component self-etching enamel/dentin adhesives.

    Science.gov (United States)

    Salz, Ulrich; Bock, Thorsten

    2010-02-01

    To demonstrate that hydrolytically stable methacrylamide monomers allow one-component self-etching adhesives with comparable adhesive properties and better storage stability than hitherto available methyacrylate-based adhesive formulations. The shear bond strength and storage stability of the new one-component self-etching, methacrylamide-based adhesive AdheSE One F (Ivoclar Vivadent) to enamel and dentin was compared to the methacrylate-based Clearfil S3 Bond (Kuraray), G-Bond (GC), Hybrid Bond (Sun Medical), iBond (Heraeus Kulzer), Optibond All In One (Sybron-Kerr), and the methacrylamide-based Xeno V (Dentsply). Hydrolytic stability and adhesive performance of these adhesives was evaluated by accelerated aging at 42 degrees C over 16 weeks and monthly assessment of shear bond strength to dentin. The null hypothesis was that the bond strength of one-bottle self-etching dental adhesives is independent of storage duration and that, disregarding their higher stability against hydrolysis, methacrylamide- based materials offer performance beyond shelf-life time, comparable to methacrylate-based adhesives. Statistical analysis included 1-way-ANOVA and the Tukey-B post-hoc test (p AdheSE One F) to 16.6 MPa (iBond) and on dentin from 36.1 MPa (Optibond All In One) to 20.5 MPa (G-Bond). During accelerated aging, methacrylate-based adhesives with a pH AdheSE One F and Xeno V were stable for 16 weeks regarding shear bond strength to dentin. The shelf life of one-component self-etching adhesives is determined by their chemical composition. In conventional methacrylate-based adhesives, the inherently acidic environment of such formulations leads to monomer degradation due to hydrolysis. In contrast, methacrylamide-based adhesives are stable to aqueous acid and exhibit much superior storage stability without monomer degradation-related losses in adhesion performance.

  11. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  12. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  13. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Anglin, Kevin, E-mail: kevin.r.anglin@gmail.com; Goodhue, William D. [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 and Department of Physics and Applied Physics, University of Massachusetts Lowell, 1 University Ave., Lowell, Massachusetts 01854 (United States); Swint, Reuel B.; Porter, Jeanne [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 (United States)

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  14. Investigation of the giant step bunching induced by the etching of 4H-SiC in Ar-H2 mix gases

    Science.gov (United States)

    Ishida, Yuuki; Yoshida, Sadafumi

    2016-09-01

    We have investigated the etching of 4H-SiC by H2 and the occurrence of giant step bunching (GSB) on SiC surfaces in an Ar-H2 gas system. In this paper, we propose a new method of determining the rate-limiting process under a certain etching condition and a new chemical kinetics model of SiC etching at the mass transfer limit in the Ar-H2 gas system. Using the new determination method, we have found that GSB occurs only at the mass transfer limit. Combining the new chemical kinetics model with the cluster effect model of the GSB occurrence mechanism, we have derived the theoretical boundary line for the temperature dependence of H2 concentration on GSB occurrence and shown the good agreement between the theoretical boundary line and the line derived from experimental results.

  15. Survey report on an environmental harmony type production system of chemical products; Kankyo chowagata kagaku seihin seizo system ni kansuru chosa hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    As part of establishing an environmental harmony type production system of chemical products, study and survey were made on PET bottles. Using the life cycle analysis method (LCA), a study was made for proposing a material recycle (MR) method which is environmentally and economically excellent in the stage of recycling waste PET bottles. The total cost of recycling can be reduced by 34% supported by a decrease in equipment cost and improvement in yield if there is no mixture of foreign substances such as aluminum caps and PVC bottles. However, the ratio of the amount obtained from the reduction to the total production cost is small, and it is necessary to take measures from a viewpoint of the cost in a total production process and environmental loads. In a survey in Kawaguchi city, PET bottles discharged from the business sector occupied 41% of all the discharge amount. In a survey in Yokohama city, very important data were obtained on PET bottles appointed as the second type under the recycle law. The quality of PET bottles to be brought to the recycling plant is important for effectively processing PET bottles in MR method. For achievement of MR which is low in cost and small in environmental load, needed were cooperation by citizens, the shipping management system in autonomous government, and changes in design and material quality to be made by the industrial circle. 8 refs., 64 figs., 68 tabs.

  16. Microscopic model for chemical etchability along radiation damage paths in solids

    Institute of Scientific and Technical Information of China (English)

    Mukhtar Ahmed RANA

    2008-01-01

    It would be very interesting to develop a picture about removal of atoms from the radiation damaged paths or latent nuclear tracks and undamaged bulk material in track detectors. Here, theory of chemical etching is described briefly and a new model for chemical etching along radiation damaged paths in solids is developed based on basic scientific facts and valid assumptions. Dependence of chemical etching on radiation damage intensity and etching conditions is discussed. A new parameter for etching along radiation damaged paths is introduced, which is useful for investigation of relationship between chemical etchability and radiation damage in a solid. Results and discussion presented here are also useful for further development of nuclear waste immobilization.

  17. Nanochannel arrays etched into hexagonal boron nitride mesa-membranes by focused ion beam

    Science.gov (United States)

    Fulcrand, Remy; Linas, Sébastien; Cauwet, François; Poinsot, Blaise; Brioude, Arnaud

    2016-11-01

    Meso-membranes with highly ordered nano channel arrays have been fabricated by patterning hexagonal boron nitride (h-BN) films using a focused ion beam. The complete experimental procedure will be given in detail form the chemical vapor deposition for h-BN synthesis to its patterning and the final membrane design for nanofluidic experiments. The membranes obtained are characterized at each experimental step by electron microscopy and Raman spectroscopy. The technique is finally applied to fabricate devices in which the only passage for a fluid is a nano channel array etched into a h-BN film.

  18. Applicability of Polyimide Films as Etched-Track Detectors for Ultra-Heavy Cosmic Ray Components

    Science.gov (United States)

    Yamauchi, Tomoya; Matsukawa, Kenya; Mori, Yutaka; Kanasaki, Masato; Hattori, Atsuto; Matai, Yuri; Kusumoto, Tamon; Tao, Akira; Oda, Keiji; Kodaira, Satoshi; Konishi, Teruaki; Kitamura, Hisashi; Yasuda, Nakahiro; Barillon, Rémi

    2013-04-01

    The track registration property in polyimide Kapton has been examined for heavy ions, including 2.3 GeV Fe and 24 GeV Xe ions. Conventional track formation criteria fail to predict the thresholds of etch pit formation, while a chemical criterion stating that etchable tracks are formed when two adjacent diphenyl ethers are broken in the vicinity of the ion's trajectory should be more appropriate. Discriminative detections of ultra-heavy components in cosmic rays, such as Bi, Th, and U ions, are possible by measuring the recorded track length.

  19. Polarization insensitive graphene saturable absorbers using etched fiber for highly stable ultrafast fiber lasers.

    Science.gov (United States)

    Lee, Hyub; Kwon, Won Sik; Kim, Jin Hwan; Kang, Daewon; Kim, Soohyun

    2015-08-24

    In this paper, we introduce a graphene-based saturable absorber (GSA) with high damage threshold employing symmetrical evanescent wave interaction for highly stable mode-locking of ultrafast fiber lasers. To enhance the evanescent wave interaction between the graphene layer and the propagating light, graphene flakes are mixed with polydimethylsiloxane (PDMS), and the graphene/PDMS composite is coated onto a chemically etched fiber. The GSA exhibits polarization insensitivity due to its symmetric cross-section, which enables stable operation against environmental disturbance such as stress, bending, and temperature variation. Finally, we demonstrate a fiber laser generating 216 fs pulses with an 80 dB signal-to-noise ratio.

  20. Etched glass self-assembles into micron-size hollow platonic solids

    KAUST Repository

    Boukhalfa, Sofiane

    2012-10-03

    The interaction between the spreading of a hydrofluoric acid-based drop on a glass surface and its etching rate gives rise to hollow crystals of various shapes, including cubes, triangles, and icosahedra. These geometries are dependent on their position with respect to the contact line, where a rim forms by agglutination, similar to the formation of a coffee stain. Atomic force microscopy indentation and transmission electron microscopy observations revealed that these crystals are hollow ammonium-fluosilicate-based cryptohalite shells. © 2012 American Chemical Society.