WorldWideScience

Sample records for chemical bath deposition

  1. CdS films deposited by chemical bath under rotation

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

    2010-08-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  2. Water Condensation on Zinc Surfaces Treated by Chemical Bath Deposition

    OpenAIRE

    Narhe, R.D. (Ramchandra D.); González-Viñas, W.; Beysens, D.A. (Daniel A.)

    2010-01-01

    Water condensation, a complex and challenging process, is investigated on a metallic (Zn) surface, regularly used as anticorrosive surface. The Zn surface is coated with hydroxide zinc carbonate by chemical bath deposition, a very simple, low-cost and easily applicable process. As the deposition time increases, the surface roughness augments and the contact angle with water can be varied from 75º to 150º , corresponding to changing the surface properties from hydrophobic to ultrahydrophobic a...

  3. Bath parameter dependence of chemically deposited Copper Selenide thin film

    International Nuclear Information System (INIS)

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation Of Cu2-xSe thin films on to glass substrate. Different thin fms (0.2-0.6/μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that completing the Cu2+ ions with EA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu2-xSe. (author)

  4. Chemical bath deposition of II-VI compound thin films

    Science.gov (United States)

    Oladeji, Isaiah Olatunde

    II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice. Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films. In this study, the zinc tetraammine complex ([Zn(NH3) 4]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH3)3]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film

  5. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  6. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  7. Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-08-31

    Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

  8. Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Lazcano, Y. [Department of Solar Energy Materials, Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos-62580 (Mexico); Pena, Yolanda [Department of Solar Energy Materials, Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos-62580 (Mexico); Nair, M.T.S. [Department of Solar Energy Materials, Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos-62580 (Mexico)]. E-mail: mtsn@cie.unam.mx; Nair, P.K. [Department of Solar Energy Materials, Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos-62580 (Mexico)

    2005-12-22

    We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb{sub 2}Se{sub 3}. Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10{sup -8} ({omega} cm){sup -1} and photoconductivity, about 10{sup -6} ({omega} cm){sup -1} under tungsten halogen lamp illumination with intensity of 700 W m{sup -2}. An estimate for the mobility life time product for the film is 4 x 10{sup -9} cm{sup 2} V{sup -1}.

  9. Structural, electrical and optical properties of copper selenide thin films deposited by chemical bath deposition technique

    International Nuclear Information System (INIS)

    A low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films on glass substrates. Structural, electrical and optical properties of these films were investigated. X-ray diffraction (XRD) study of the Cu2-xSe films annealed at 523K suggests a cubic structure with a lattice constant of 5.697A. Chemical composition was investigated by X-ray photoelectron spectroscopy (XPS). It reveals that absorbed oxygen in the film decreases remarkably on annealing above 423K. The Cu/Se ratio was observed to be the same in as-deposited and annealed films. Both as- deposited and annealed films show very low resistivity in the range of (0.04- 0.15) x 10-5 Ω-m. Transmittance and Reflectance were found in the range of 5-50% and 2-20% respectively. Optical absorption of the films results from free carrier absorption in the near infrared region with absorption coefficient of ∼108 m-1. The band gap for direct transition, Eg.dir varies in the range of 2.0-2.3eV and that for indirect transition Eg.indir is in the range of 1.25-1.5eV.1. (author)

  10. Influence of Triethanolamine on the Chemical Bath Deposited NiS Thin Films

    OpenAIRE

    Anuar Kassim; Ho S. Min; Tan W. Tee; Ngai C. Fei

    2011-01-01

    Problem statement: Recently, many scientists looking for new chalcogenide materials for the solar cell applications. Nowadays, silicon-based solar cell became dominant products in the market. Because of expensive silicon-based solar cells, scientists hope replaces it with cheaper chalcogenide materials. Approach: The binary chalcogenide materials were deposited onto microscope glass slide using simple chemical bath deposition method. Here, we study the influence of complex...

  11. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  12. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  13. Chemical bath deposited CdS films using magnetic treated solutions

    International Nuclear Information System (INIS)

    CdS thin films were obtained by chemical bath deposition onto corning glass slides using precursor solutions previously treated in a steady magnetic field. The kinetic growth was affected in dependence of the magnetic field intensity used in the solution treatments. The growth rate is slower when magnetized solutions are used; however, the reaction exhaustion is more delayed. The magnetic treatments improve the conversion of starting materials in thin films. Thus, the bath is more efficient and thicker films can be obtained. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  15. CdS thin films growth by ammonia free chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Jaber, A.Y.; Alamri, S.N.; Aida, M.S., E-mail: aida_salah2@yahoo.fr

    2012-02-29

    Cadmium Sulfide CdS thin films were deposited by chemical bath deposition technique using ethanolamine as complexing agent instead of commonly used ammonia to avoid its toxicity and volatility during film preparation. In order to investigate the film growth mechanism samples were prepared with different deposition times. A set of substrates were dropped in the same bath and each 30 minutes a sample is withdrawn from the bath, by this way all the obtained films were grown in the same condition. The films structure was analyzed by X rays diffraction. In early stage of growth the obtained films are amorphous, with increasing the deposition time, the films exhibits a pure hexagonal structure with (101) preferential orientation. The film surface morphology was studied by atomic force microscopy. From these observations we concluded that the early growth stage starts in the 3D Volmer-Weber mode, followed by a transition to the Stransky-Krastanov mode with increasing deposition time. The critical thickness of this transition is 120 nm. CdS quantum dots were formed at end of the film growth. The optical transmittance characterization in the UV-Visible range shows that the prepared films have a high transparency ranging from 60 to 80% for photons having wavelength greater than 600 nm. - Highlights: Black-Right-Pointing-Pointer CdS thin films are deposited by ammonia-free chemical bath deposition. Black-Right-Pointing-Pointer Films have hexagonal structure with (101) preferential orientation. Black-Right-Pointing-Pointer Growth begins in the Volmer-Weber mode and changes to the Stransky-Krastanov mode. Black-Right-Pointing-Pointer CdS quantum dots are formed in the late stage of growth.

  16. Chemical bath deposition for the fabrication of antireflective coating of spherical silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro [College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

    2006-12-15

    A CdS film as an antireflective (AR) coating has been successfully deposited on spherical silicon solar cells by chemical bath deposition, which is a novel deposition method of AR coatings for spherical silicon solar cells. The CBD method is a growth method in an aqueous solution and enables film formation for electronic devices with arbitrary shapes. The solar cell performance of the cell with the CdS film showed a 16% increase in short circuit current compared to that without an ARC. The result confirms that the CBD method is useful for the ARC fabrication of spherical silicon solar cells. (author)

  17. Comprehensive optical studies on SnS layers synthesized by chemical bath deposition

    Science.gov (United States)

    Gedi, Sreedevi; Minnam Reddy, Vasudeva Reddy; Park, Chinho; Chan-Wook, Jeon; Ramakrishna Reddy, K. T.

    2015-04-01

    A simple non-vacuum and cost effective wet chemical technique, chemical bath deposition was used to prepare tin sulphide (SnS) layers on glass substrates. The layers were formed by varying bath temperature in the range, 40-80 °C, keeping other deposition parameters as constant. An exhaustive investigation on their optical properties with bath temperature was made using the transmittance and reflectance measurements. The absorption coefficient was evaluated from the optical transmittance data utilizing Lambert's principle and is >104 cm-1 for all the as-prepared layers. The energy band gap of the layers was determined from the differential reflectance spectra that varied from 1.41 eV to 1.30 eV. Consequently, refractive index and extinction coefficient were obtained from Pankov relations and dispersion constants were calculated using Wemple-Didomenico method. In addition, other optical parameters such as the optical conductivity, dielectric constants, dissipation factor, high frequency dielectric constant and relaxation time were also calculated. Finally electrical parameters such as resistivity, carrier mobility and carrier density of as-prepared layers were estimated using optical data. A detailed analysis of the dependence of all above mentioned parameters on bath temperature is reported and discussed for a clean understanding of electronic characteristics of SnS layers.

  18. Studies on chemical bath deposited zinc sulphide thin films with special optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Ladar, Maria [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); ' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Popovici, Elisabeth-Jeanne [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania)]. E-mail: jennypopovici@yahoo.com; Baldea, Ioan [Faculty of Chemistry and Chemical Engineering, ' Babes-Bolyai' University, 400028 Cluj-Napoca (Romania); Grecu, Rodica [' Raluca Ripan' Institute for Research in Chemistry, 30 Fantanele, 400294 Cluj-Napoca (Romania); Indrea, Emil [National Institute for R and D of Isotopic and Molecular Technology, Donath 71-103, 400293 Cluj-Napoca (Romania)

    2007-05-31

    Adherent and uniform zinc sulphide thin films were deposited on optical glass platelets from chemical bath containing thiourea, zinc acetate, ammonia and sodium citrate. The samples, as they were prepared were investigated by UV-vis absorption/reflection spectroscopy, fluorescence spectroscopy and X-ray diffraction. The effects of growth conditions such as reagent concentration and deposition technique (mono- and multi-layer) on optical and structural properties of the ZnS thin films have been studied. The ability of ZnS films to exhibit luminescent properties has also been investigated.

  19. High quality antireflective ZnS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tec-Yam, S.; Rojas, J.; Rejon, V. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico); Oliva, A.I., E-mail: oliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico)

    2012-10-15

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl{sub 2}, NH{sub 4}NO{sub 3}, and CS(NH{sub 2}){sub 2} were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 Degree-Sign C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300-800 nm wavelength range, and a reflectance below 25% in the UV-Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: Black-Right-Pointing-Pointer High quality ZnS thin films were prepared by chemical bath deposition (CBD). Black-Right-Pointing-Pointer Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. Black-Right-Pointing-Pointer Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  20. Optical and Structural Properties of Nanocrystalline CdS Thin Films Grown by Chemical Bath Deposition

    International Nuclear Information System (INIS)

    Nanocrystalline cadmium sulfide thin films are prepared using chemical bath deposition (CBD) technique in aqueous alkaline bath at 60 degree Celsius and their subsequent condensation on glass substrates. Effects of annealing on structural, morphological and optical properties are presented and discussed. The best annealing temperature for CBD grown CdS films is found to be 350 degree Celsius from optical properties. The optical and structural properties of CdS films are found to be sensitive to annealing temperature and are described in terms of XRD, SEM, transmission spectra and optical studies. The structural parameters such as crystallite size have been evaluated through XRD while SEM micrographs exhibit ordering of grains after annealing. The transmission spectra shift towards higher wavelength upon annealing indicating increase in crystallinity. Annealing over 350 degree Celsius is found to degrade the external structure and optical properties of the film. (author)

  1. Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Lately, there has been a sharp increase in the publication of papers on chemical bath deposition of CdS thin films and related materials due to successful results obtained using this method to fabricate CdS thin-film buffer layers for CuInSe{sub 2}- and CdTe-based polycrystalline thin-film solar cells. Generally, these papers focus on previously proposed methods of studying film characteristics without a systematic study of the influence of deposition conditions on film characteristics. In this paper the authors present an exhaustive study of the chemical bath-deposited CdS thin films electro-optical properties dependence on deposition variables. The authors propose not only a set of conditions for obtaining CdS thin films by this method but additionally, suitable deposition process conditions for certain application requirements, such as buffer layers for thin-film solar cells. The observed electro-optical characteristics dependence on the deposition variables corroborates the chemical mechanism that they proposed previously for this process.

  2. Chemical Bath Deposition of PbS:Hg2+ Nanocrystalline Thin Films

    OpenAIRE

    R. Palomino-Merino; O. Portillo-Moreno; L. A. Chaltel-Lima; Gutiérrez Pérez, R.; de Icaza-Herrera, M.; V. M. Castaño

    2013-01-01

    Nanocrystalline PbS thin films were prepared by Chemical Bath Deposition (CBD) at 40 ± 2°C onto glass substrates and their structural and optical properties modified by in-situ doping with Hg. The morphological changes of the layers were analyzed using SEM and the X-rays spectra showing growth on the zinc blende (ZB) face. The grain size determined by using X-rays spectra for undoped samples was found to be ~36 nm, whereas with the doped sample was 32–20 nm. Optical absorption spectra were us...

  3. Low-temperature chemical bath deposition of crystalline ZnO

    Science.gov (United States)

    Jacobs, Klaus; Balitsky, Denis; Armand, Pascale; Papet, Philippe

    2010-03-01

    ZnO crystals can be grown from alkaline aqueous solution not only by the standard hydrothermal technique at temperatures between 350 °C and 400 °C, but also by chemical bath deposition (CBD) at temperatures below 100 °C. In the presence of ZnO and ScAlMgO 4 (SCAM) substrates almost all ZnO deposits on the substrate, with different habits, however. Under optimized conditions even homoepitaxial layers can be obtained, while rod-like structures are obtained on SCAM substrates. The chemistry and the driving forces behind the two processes are considered in detail and the temperature dependence of the solution composition has been calculated. The driving force for the ZnO crystal growth in the standard hydrothermal technique is the difference in the ZnO solubility in alkaline solutions at different temperatures. In contrast, the driving force for the chemical bath deposition of ZnO at low temperatures is the decay of zinc ion complex molecules with increasing temperature.

  4. Fabrication of ZnO nanorod using spray-pyrolysis and chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Ramadhani, Muhammad F., E-mail: brian@tf.itb.ac.id; Pasaribu, Maruli A. H., E-mail: brian@tf.itb.ac.id; Yuliarto, Brian, E-mail: brian@tf.itb.ac.id; Nugraha, E-mail: brian@tf.itb.ac.id [Advanced Functional Materials Laboratory, Engineering Physics Department Faculty of Industrial Technology, Institut Teknologi Bandung (Indonesia)

    2014-02-24

    ZnO thin films with nanorod structure were deposited using Ultrasonic Spray Pyrolysis method for seed growth, and Chemical Bath Deposition (CBD) for nanorod growth. High purity Zn-hydrate and Urea are used to control Ph were dissolved in ethanol and aqua bidest in Ultrasonic Spray Pyrolysis process. Glass substrate was placed above the heater plate of reaction chamber, and subsequently sprayed with the range duration of 5, 10 and 20 minutes at the temperatures of 3500 C. As for the Chemical Bath Deposition, the glass substrate with ZnO seed on the surface was immerse to Zn-hydrate, HMTA (Hexa Methylene Tetra Amine) and deionized water solution for duration of 3, 5 and 7 hour and temperatures of 600 C, washed in distilled water, dried, and annealed at 3500 C for an hour. The characterization of samples was carried out to reveal the surface morphology using Scanning Electron Microscopy (SEM). From the data, the combination of 5 minutes of Ultrasonic Spray Pyrolysis process and 3 hour of CBD has showed the best structure of nanorod. Meanwhile the longer Spraying process and CBD yield the bigger nanorod structure that have been made, and it makes the films more dense which make the nanorod collide each other and as a result produce unsymetric nanorod structure.

  5. Cu2ZnSn(S,Se)4 solar cells based on chemical bath deposited precursors

    International Nuclear Information System (INIS)

    A low-cost method has been developed to fabricate Cu2ZnSn(S,Se)4 solar cells. By this method, firstly SnS, CuS, and ZnS layers are successively deposited on a molybdenum/soda lime glass (Mo/SLG) substrate by chemical bath deposition. The Cu2ZnSn(S,Se)4 thin films are obtained by annealing the precursor in a selenium atmosphere utilizing a graphite box in the furnace. The obtained Cu2ZnSn(S,Se)4 thin films show large crystalline grains. By optimizing the preparation process, Cu2ZnSn(S,Se)4 solar cells with efficiencies up to 4.5% are obtained. The results imply that the Cu2ZnSn(S,Se)4/CdS interface and the back contact may be limiting factors for solar cell efficiency. - Highlights: • A chemical bath deposition method is developed to prepare Cu2ZnSn(S,Se)4 thin films. • The Cu2ZnSn(S,Se)4 thin films show good crystallization. • Solar cells with efficiencies up to 4.5% can be prepared based on the Cu2ZnSn(S,Se)4 layer. • The limiting factors for the solar cell efficiency are analyzed

  6. Fabrication of ZnO nanorod using spray-pyrolysis and chemical bath deposition method

    International Nuclear Information System (INIS)

    ZnO thin films with nanorod structure were deposited using Ultrasonic Spray Pyrolysis method for seed growth, and Chemical Bath Deposition (CBD) for nanorod growth. High purity Zn-hydrate and Urea are used to control Ph were dissolved in ethanol and aqua bidest in Ultrasonic Spray Pyrolysis process. Glass substrate was placed above the heater plate of reaction chamber, and subsequently sprayed with the range duration of 5, 10 and 20 minutes at the temperatures of 3500 C. As for the Chemical Bath Deposition, the glass substrate with ZnO seed on the surface was immerse to Zn-hydrate, HMTA (Hexa Methylene Tetra Amine) and deionized water solution for duration of 3, 5 and 7 hour and temperatures of 600 C, washed in distilled water, dried, and annealed at 3500 C for an hour. The characterization of samples was carried out to reveal the surface morphology using Scanning Electron Microscopy (SEM). From the data, the combination of 5 minutes of Ultrasonic Spray Pyrolysis process and 3 hour of CBD has showed the best structure of nanorod. Meanwhile the longer Spraying process and CBD yield the bigger nanorod structure that have been made, and it makes the films more dense which make the nanorod collide each other and as a result produce unsymetric nanorod structure

  7. Chemical Bath Deposition of Aluminum Oxide Buffer on Curved Surfaces for Growing Aligned Carbon Nanotube Arrays.

    Science.gov (United States)

    Wang, Haitao; Na, Chongzheng

    2015-07-01

    Direct growth of vertically aligned carbon nanotube (CNT) arrays on substrates requires the deposition of an aluminum oxide buffer (AOB) layer to prevent the diffusion and coalescence of catalyst nanoparticles. Although AOB layers can be readily created on flat substrates using a variety of physical and chemical methods, the preparation of AOB layers on substrates with highly curved surfaces remains challenging. Here, we report a new solution-based method for preparing uniform layers of AOB on highly curved surfaces by the chemical bath deposition of basic aluminum sulfate and annealing. We show that the thickness of AOB layer can be increased by extending the immersion time of a substrate in the chemical bath, following the classical Johnson-Mehl-Avrami-Kolmogorov crystallization kinetics. The increase of AOB thickness in turn leads to the increase of CNT length and the reduction of CNT curviness. Using this method, we have successfully synthesized dense aligned CNT arrays of micrometers in length on substrates with highly curved surfaces including glass fibers, stainless steel mesh, and porous ceramic foam. PMID:26053766

  8. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    A I Oliva; J E Corona; R Patiño; A I Oliva-Avilés

    2014-04-01

    Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical properties of CdS films were investigated. The morphology, thickness, bandgap energy, crystalline structure and elemental composition of Zn- and Cu-doped CdS films were investigated and compared to the undoped CdS films properties. Both Zn- and Cu-doped CdS films presented a cubic crystalline structure with (1 1 1) as the preferential orientation. Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped CdS films. Zn-doped CdS films presented higher thickness and roughness values than those of Cu-doped CdS films. From the photoluminescence results, it is suggested that the inclusion of Zn and Cu into CdS crystalline structure promotes the formation of acceptor levels above the CdS valence band, resulting in lower bandgap energy values for the doped CdS films.

  9. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  10. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    Science.gov (United States)

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

  11. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics.

    Science.gov (United States)

    Mokurala, Krishnaiah; Baranowski, Lauryn L; de Souza Lucas, Francisco W; Siol, Sebastian; van Hest, Maikel F A M; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers. PMID:27479495

  12. Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Mokurala, Krishnaiah; Baranowski, Lauryn L.; de Souza Lucas, Francisco W.; Siol, Sebastian; van Hest, Maikel F. A. M.; Mallick, Sudhanshu; Bhargava, Parag; Zakutayev, Andriy

    2016-09-12

    Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

  13. Influence of Triethanolamine on the Chemical Bath Deposited NiS Thin Films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2011-01-01

    Full Text Available Problem statement: Recently, many scientists looking for new chalcogenide materials for the solar cell applications. Nowadays, silicon-based solar cell became dominant products in the market. Because of expensive silicon-based solar cells, scientists hope replaces it with cheaper chalcogenide materials. Approach: The binary chalcogenide materials were deposited onto microscope glass slide using simple chemical bath deposition method. Here, we study the influence of complexing agent in the preparation of thin films. The structural and morphological of the deposited films have been studied using X-ray diffraction and scanning electron microscopy, respectively. Results: The X-ray diffraction data showed that the films had polycrystalline in nature with hexagonal structure. The films deposited using 0.1 M of triethanolamine showed more NiS peaks and larger grain sizes as compared with 0.05M and 0.2 M triethanolamine based on the X-ray diffraction and scanning electron microscopy analysis, respectively. Conclusion: The complexing agent played important role during the deposition process.

  14. Chemical Bath Deposition of PbS:Hg2+ Nanocrystalline Thin Films

    Directory of Open Access Journals (Sweden)

    R. Palomino-Merino

    2013-01-01

    Full Text Available Nanocrystalline PbS thin films were prepared by Chemical Bath Deposition (CBD at 40 ± 2°C onto glass substrates and their structural and optical properties modified by in-situ doping with Hg. The morphological changes of the layers were analyzed using SEM and the X-rays spectra showing growth on the zinc blende (ZB face. The grain size determined by using X-rays spectra for undoped samples was found to be ~36 nm, whereas with the doped sample was 32–20 nm. Optical absorption spectra were used to calculate the Eg, showing a shift in the range 1.4–2.4 eV. Raman spectroscopy exhibited an absorption band ~135 cm−1 displaying only a PbS ZB structure.

  15. Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Oluwafemi, O.S. [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI, 5117 (South Africa); Dangbegnon, J.K. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Botha, J.R., E-mail: Reinhardt.Botha@nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 Degree-Sign C is hereby reported. By annealing in O{sub 2} environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.

  16. Surface characterization of ZnO nanorods grown by chemical bath deposition

    Science.gov (United States)

    Mbulanga, C. M.; Urgessa, Z. N.; Tankio Djiokap, S. R.; Botha, J. R.; Duvenhage, M. M.; Swart, H. C.

    2016-01-01

    The surface composition of as-grown and annealed ZnO nanorods (ZNs) grown by a two-step chemical bath deposition method is investigated by the following surface-sensitive techniques: Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The presence of H on the surface and throughout the entire thickness of ZNs is confirmed by TOF-SIMS. Based on TOF-SIMS results, the O2 XPS peak mostly observable at ~531.5 is assigned to O bound to H. Furthermore, it is found that the near surface region of as-grown ZNs is Zn-rich, and annealing at high temperature (~850 °C) removes H-related defects from the surface of ZNs and affect the balance of zinc and oxygen concentrations.

  17. Superhydrophobic poly(vinylidene fluoride) film fabricated by alkali treatment enhancing chemical bath deposition

    Science.gov (United States)

    Zheng, Zhenrong; Gu, Zhenya; Huo, Ruiting; Luo, Zhishan

    2010-01-01

    Based on the lotus effect principle, the superhydrophobic poly(vinylidene fluoride) (PVDF) film was successfully prepared by the method of alkali treatment enhancing chemical bath deposition. The surface of PVDF film prepared in this work was constructed by many smooth and regular microreliefs. Oxygen-containing functional groups were introduced in PVDF film by treatment with aqueous NaOH solution. The nano-scale peaks on the top of the microreliefs were implemented by the reaction between dimethyldichlorosilane/methyltrichlorosilane solution and the oxygen-containing functional groups of PVDF film. The micro- and nano-scale structures, similar to the lotus leaf, was clearly observed on PVDF film surface by scanning electronic microscopy (SEM) and atomic force microscope (AFM). The water contact angle and sliding angle on the fabricated lotus-leaf-like PVDF film surface were 157° and 1°, respectively, exhibiting superhydrophobic property and self-cleaning property.

  18. A simple method for chemical bath deposition of electrochromic tungsten oxide films

    International Nuclear Information System (INIS)

    A simple, economical, chemical bath method for depositing tungsten oxide films has been developed. The films have been prepared from aqueous solution containing Na2WO4.2H2O and diethyl sulfate in slightly acidic media at 90-95 deg. C on fluoride doped tin oxide substrates (FTO). The X-ray analysis clearly showed that the films do not correspond to any known tungsten oxide with its experimental d-values and in the text the composition is denoted as WO x. The thin films durability was tested in aqueous solution of LiClO4 (0.1 mol dm-3) for about 7000 cycles followed by cyclic voltammetry which confirmed that the coated material is highly stable. The optical transmittance spectra of colored and bleached states showed significant change in the transmittance, which make these films favorable for electrochromic devices

  19. A simple method for chemical bath deposition of electrochromic tungsten oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Najdoski, Metodija Z. [Institute of Chemistry, Faculty of Natural Sciences and Mathematics, Sts. Cyril and Methodius University, P.O. Box 162, Arhimedova 5, 1000 Skopje (Macedonia, The Former Yugoslav Republic of)], E-mail: metonajd@iunona.pmf.ukim.edu.mk; Todorovski, Toni [Institute of Chemistry, Faculty of Natural Sciences and Mathematics, Sts. Cyril and Methodius University, P.O. Box 162, Arhimedova 5, 1000 Skopje (Macedonia, The Former Yugoslav Republic of)

    2007-08-15

    A simple, economical, chemical bath method for depositing tungsten oxide films has been developed. The films have been prepared from aqueous solution containing Na{sub 2}WO{sub 4}.2H{sub 2}O and diethyl sulfate in slightly acidic media at 90-95 deg. C on fluoride doped tin oxide substrates (FTO). The X-ray analysis clearly showed that the films do not correspond to any known tungsten oxide with its experimental d-values and in the text the composition is denoted as WO {sub x}. The thin films durability was tested in aqueous solution of LiClO{sub 4} (0.1 mol dm{sup -3}) for about 7000 cycles followed by cyclic voltammetry which confirmed that the coated material is highly stable. The optical transmittance spectra of colored and bleached states showed significant change in the transmittance, which make these films favorable for electrochromic devices.

  20. Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

    International Nuclear Information System (INIS)

    The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 °C is hereby reported. By annealing in O2 environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.

  1. Superhydrophobic poly(vinylidene fluoride) film fabricated by alkali treatment enhancing chemical bath deposition

    International Nuclear Information System (INIS)

    Based on the lotus effect principle, the superhydrophobic poly(vinylidene fluoride) (PVDF) film was successfully prepared by the method of alkali treatment enhancing chemical bath deposition. The surface of PVDF film prepared in this work was constructed by many smooth and regular microreliefs. Oxygen-containing functional groups were introduced in PVDF film by treatment with aqueous NaOH solution. The nano-scale peaks on the top of the microreliefs were implemented by the reaction between dimethyldichlorosilane/methyltrichlorosilane solution and the oxygen-containing functional groups of PVDF film. The micro- and nano-scale structures, similar to the lotus leaf, was clearly observed on PVDF film surface by scanning electronic microscopy (SEM) and atomic force microscope (AFM). The water contact angle and sliding angle on the fabricated lotus-leaf-like PVDF film surface were 157 deg. and 1 deg., respectively, exhibiting superhydrophobic property and self-cleaning property.

  2. Fabrication and characterization of indium sulfide thin films deposited on SAMs modified substrates surfaces by chemical bath deposition

    International Nuclear Information System (INIS)

    In an effort to explore the optoelectronic properties of nanostructured indium sulfide (In2S3) thin films for a wide range of applications, the In2S3 thin films were successfully deposited on the APTS layers (-NH2-terminated) modified ITO glass substrates using the chemical bath deposition technique. The surface morphology, structure and composition of the resultant In2S3 thin films were characterized by FESEM, XRD, and XPS, respectively. Also, the correlations between the optical properties, photocurrent response and the thickness of thin films were established. According to the different deposition mechanisms on the varying SAMs terminational groups, the positive and negative micropatterned In2S3 thin films were successfully fabricated on modified Si substrates surface combining with the ultraviolet lithography process. This offers an attractive opportunity to fabricate patterned In2S3 thin films for controlling the spatial positioning of functional materials in microsystems.

  3. Morphology of CdSe films prepared by chemical bath deposition: The role of substrate

    Energy Technology Data Exchange (ETDEWEB)

    Simurda, M. [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Nemec, P. [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic)]. E-mail: nemec@karlov.mff.cuni.cz; Formanek, P. [Institut fuer Strukturphysik, Technische Universitaet Dresden, Zellescher Weg 16, D-01062 Dresden (Germany); Nemec, I. [Charles University in Prague, Faculty of Science, Albertov 6, 128 43 Prague 2 (Czech Republic); Nemcova, Y. [Charles University in Prague, Faculty of Science, Albertov 6, 128 43 Prague 2 (Czech Republic); Maly, P. [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic)

    2006-07-26

    We combine optical spectroscopy and transmission electron microscopy to study the growth and the structural morphology of CdSe films prepared by chemical bath deposition (CBD) on two considerably different substrates. The films grown on glass are compact and strongly adherent to the substrate. On the contrary, the films deposited on carbon-coated glass (with approx. 20 nm thick amorphous carbon layer) are only loosely adherent to the substrate. Using transmission electron microscopy we revealed that even though the films grown on both substrates are assembled from closely spaced nanocrystals with diameter of about 5 nm, the films morphology on the sub-micrometer scale is considerably different in the two cases. While the films deposited on glass are rather compact, the films prepared on carbon layer have high porosity and are formed by interconnected spheres which size is dependent on the duration of deposition (e.g. 155 nm for 6 h and 350 nm for 24 h). This shows that the choice of the substrate for CBD has a stronger influence on the sub-micrometer film morphology than on the properties of individual nanocrystals forming the film.

  4. Morphology of CdSe films prepared by chemical bath deposition: The role of substrate

    International Nuclear Information System (INIS)

    We combine optical spectroscopy and transmission electron microscopy to study the growth and the structural morphology of CdSe films prepared by chemical bath deposition (CBD) on two considerably different substrates. The films grown on glass are compact and strongly adherent to the substrate. On the contrary, the films deposited on carbon-coated glass (with approx. 20 nm thick amorphous carbon layer) are only loosely adherent to the substrate. Using transmission electron microscopy we revealed that even though the films grown on both substrates are assembled from closely spaced nanocrystals with diameter of about 5 nm, the films morphology on the sub-micrometer scale is considerably different in the two cases. While the films deposited on glass are rather compact, the films prepared on carbon layer have high porosity and are formed by interconnected spheres which size is dependent on the duration of deposition (e.g. 155 nm for 6 h and 350 nm for 24 h). This shows that the choice of the substrate for CBD has a stronger influence on the sub-micrometer film morphology than on the properties of individual nanocrystals forming the film

  5. Preparation and characterization of ZnS thin films by the chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Iwashita, Taisuke [Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science 1-14-6 Kudankita, Chiyoda, Tokyo 102-0073 (Japan); Ando, Shizutoshi, E-mail: ando_shi@rs.kagu.tus.ac.jp [Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science 1-14-6 Kudankita, Chiyoda, Tokyo 102-0073 (Japan); Research Institute for Science and Technology, Advanced Device Laboratories (ADL), Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601 (Japan); Research Institute for Science and Technology, Photovoltaic Science and Technology Research Division, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601 (Japan)

    2012-10-01

    ZnS thin films prepared on quartz substrates by the chemical bath deposition (CBD) method with three type temperature profile processes have been investigated by X-ray diffraction, scanning electron microscope, energy dispersive X-ray analysis and light transmission. One is a 1-step growth process, and the other is 2-steps growth and self-catalyst growth processes. The surface morphology of CBD-ZnS thin films prepared by the CBD method with the self-catalyst growth process is flat and smooth compared with that prepared by the 1-step and 2-steps growth processes. The self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement in crystallinity of ZnS thin films prepared by CBD. ZnS thin films prepared by CBD method with self-catalyst growth process can be expected for improvement in the conversion efficiency of Cu(InGa)Se{sub 2}-based thin film solar cells by using it for the buffer layer. - Highlights: Black-Right-Pointing-Pointer ZnS thin films were prepared by chemical bath deposition (CBD) method. Black-Right-Pointing-Pointer The crystallization of CBD-ZnS films was further improved. Black-Right-Pointing-Pointer The crystallinity of CBD-ZnS thin films is dependent on the zinc source material. Black-Right-Pointing-Pointer Self-catalyst growth process is useful for the growth of thin films by CBD method. Black-Right-Pointing-Pointer It is expected to improve the conversion efficiency of CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells.

  6. Femtosecond Transient Absorption Studies in Cadmium Selenide Nanocrystal Thin Films Prepared by Chemical Bath Deposition Method

    Directory of Open Access Journals (Sweden)

    M. C. Rath

    2007-01-01

    Full Text Available Dynamics of photo-excited carrier relaxation processes in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method have been studied by nondegenerate femtosecond transient pump-probe spectroscopy. The carriers were generated by exciting at 400 nm laser light and monitored by several other wavelengths. The induced absorption followed by a fast bleach recovery observed near and above the bandgap indicates that the photo-excited carriers (electrons are first trapped by the available traps and then the trapped electrons absorb the probe light to show a delayed absorption process. The transient decay kinetics was found to be multiexponential in nature. The short time constant, <1 picosecond, was attributed to the trapping of electrons by the surface and/or deep traps and the long time constant, ≥20 picoseconds, was due to the recombination of the trapped carriers. A very little difference in the relaxation processes was observed in the samples prepared at bath temperatures from 25∘C to 60∘C.

  7. Study of Chemical Bath Deposition of ZnS Thin Films with Substrate Vibration

    Science.gov (United States)

    Bian, Z. Q.; Xu, X. B.; Chu, J. B.; Sun, Z.; Chen, Y. W.; Huang, S. M.

    An improved chemical bath deposition (CBD) technique has been provided to prepare zinc sulfide (ZnS) thin films on glass substrates deposited at 80-82°C using a mixed aqueous solution of zinc sulfate, ammonium sulfate, thiourea, hydrazine hydrate, and ammonia at the alkaline conditions. Both the traditional magnetic agitation and the substrates vibration by hand frequently were done simultaneously during the deposition. The substrates vibration reduced the formation and residence of gas bubbles on the glass substrates during growth and resulted in growth of clean ZnS thin films with high quality. Ammonia and hydrazine hydrate were used as complexing agents. It is found that hydrazine hydrate played an important role in growth of ZnS films. The structure and microstructure of ZnS films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-vis spectroscopic methods. The XRD showed a hexagonal structure. The formed ZnS films exhibited good optical properties with high transmittance in the visible region and the band gap value was estimated to be 3.5-3.70 eV.

  8. Chemical bath deposition of semiconductor thin films & nanostructures in novel microreactors

    Science.gov (United States)

    McPeak, Kevin M.

    Chemical bath deposition (CBD) offers a simple and inexpensive route to deposit semiconductor nanostructures and thin films, but lack of fundamental understanding and control of the underlying chemistry has limited its versatility. CBD is traditionally performed in a batch reactor, requiring only a substrate to be immersed in a supersaturated solution of aqueous precursors such as metal salts, complexing agents, and pH buffers. Highlights of CBD include low cost, operation at low temperature and atmospheric pressure, and scalability to large area substrates. In this dissertation, I explore CBD of semiconductor thin films and nanowire arrays in batch and continuous flow microreactors. Microreactors offer many advantages over traditional reactor designs including a reduction in mass transport limitations, precise temperature control and ease of production scale-up by "numbering up". Continuous flow micoreactors offer the unique advantage of providing reaction conditions that are time-invariant but change smoothly as a function of distance down the reaction channel. Growth from a bath whose composition changes along the reactor length results in deposited materials whose properties vary as a function of position on the substrate, essentially creating a combinatorial library. These substrates can be rapidly characterized to identify relationships between growth conditions and material properties or growth mechanisms. I have used CBD in a continuous flow microreactor to deposit ZnO nanowire arrays and CdZnS films whose optoelectronic properties vary as a function of position. The spatially-dependent optoelectronic properties of these materials have been correlated to changes in the composition, structure or growth mechanisms of the materials and ultimately their growth conditions by rigorous spatial characterization. CBD in a continuous flow microreactor, coupled with spatial characterization, provides a new route to understanding the connection between CBD growth

  9. Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

    Science.gov (United States)

    Kim, Hye Jin; Kim, Chae-Woong; Jung, Duk Young; Jeong, Chaehwan

    2016-05-01

    This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells. Room temperature time-resolved photoluminescence (TR-PL) measurements were performed on the Cu(In,Ga)Se2 (CIGS) thin film and CdS/CIGS samples to determine the recombination process of the photo-generated minority carrier. The device performance was found to be dependent on the thickness of the CdS layer. As the thickness of the CdS increases, the fill factor and the series resistance increased to 61.66% and decreased to 8.35 Ω, respectively. The best condition was observed at a reaction temperature of 60 degrees C, and its conversion efficiency was 12.20%.

  10. Electrochromic properties of porous NiO thin films prepared by a chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xia, X.H.; Tu, J.P.; Zhang, J.; Wang, X.L. [Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, W.K.; Huang, H. [College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310032 (China)

    2008-06-15

    Highly porous nickel oxide thin films were prepared on ITO glass by a simple chemical bath deposition (CBD) method in combination with a following heat-treatment process. XRD analysis revealed that the as-deposited precursor film contained {beta}-Ni(OH){sub 2} and {gamma}-NiOOH, and they changed to cubic polycrystalline NiO after annealing. The FTIR results showed presence of free hydroxyl ion and water in the NiO thin films. The electrochromic properties of NiO thin films were investigated in an aqueous alkaline electrolyte (1 M KOH) by means of transmittance, cyclic voltammetry (CV) and chronoamperometry (CA) measurements. The NiO thin film annealed at 300 C exhibited a noticeable electrochromism and good memory effect. The coloration efficiency was calculated to be 42 cm{sup 2} C{sup -1} at 550 nm, with a variation of transmittance up to 82%. The porous NiO thin films also showed good reaction kinetics with fast switching speed, and the coloration and bleaching time were 8 and 10 s, respectively. (author)

  11. Synthesis of CdS nanostructures using template-assisted ammonia-free chemical bath deposition

    Science.gov (United States)

    Preda, N.; Enculescu, M.; Gherendi, F.; Matei, E.; Toimil-Molares, M. E.; Enculescu, I.

    2012-09-01

    CdS micro- and nano-structures (micro/nanotubes and nanostructured films) were obtained by ammonia-free chemical bath deposition using polymer templates (ion track-etched polycarbonate membranes and poly(styrene-hydroxyethyl methacrylate) nanosphere arrays). The semiconductor structures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoluminescence and electrical measurements. The diameters of CdS tubes are between 300 nm and few microns and the lengths are up to tens of micrometers. The SEM images prove that the CdS films are nanostructured due to the deposition on the polymer nanosphere arrays. For both CdS structures (tubes and films) the XRD patterns show a hexagonal phase. The optical studies reveal a band gap value of about 2.5-2.6 eV and a red luminescence at ˜1.77 eV. A higher increase of conductivity is observed for illuminating the CdS nanostructured film when compared to the simple semiconductor film. This is a consequence of the periodic patterning induced by the polymer nanosphere array.

  12. Optical Characteristics of La-Doped ZnS Thin Films Prepared by Chemical Bath Deposition

    Institute of Scientific and Technical Information of China (English)

    XIE Hai-Qing; CHEN Yuan; HUANG Wei-Qing; HUANG Gui-Fang; PENG Ping; PENG Li; WANG Tai-Hang; ZENG Yun

    2011-01-01

    Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O3. Composition of the films is analyzed using an energy-dispersive x-ray spectroscopy (EDS). Absorption spectra and spectral transmittances of the films are measured using a double beam UV-VIS spectrophotometer (TU-1901). It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum. Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin films. Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS. These results indicate that La-doped ZnS thin films could be valuably adopted as transparent electrodes.%@@ Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O2.Composition of the 61ms is analyzed using an energy-dispersive x-ray spectroscopy (EDS).Absorption spectra and spectral tra.nsmitta.nces of the 61ms are measured using a double beam UV-VIS spectrophotometer (TU-1901).It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum.Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin 61ms.Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS.These results indicate that La-doped ZnS thin 6hns could be valuably adopted as transparent electrodes.

  13. Shape controllability and photoluminescence properties of ZnO nanorods grown by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Terasako, Tomoaki, E-mail: terasako.tomoaki.mz@ehime-u.ac.jp [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Murakami, Toshihiro [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Yagi, Masakazu [Kagawa National College of Technology, 551 Koda, Takuma-cho, Mitoyo-shi, Kagawa 769-1192 (Japan); Shirakata, Sho [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan)

    2013-12-31

    Zinc oxide (ZnO) nanorods (NRs) were synthesized on glass substrates and Au seed layers by chemical bath deposition from the aqueous solution of ZnCl{sub 2} and the mixed aqueous solution of zinc acetate dihydrate (ZnAc) and hexamethylenetetramine (HMT) at a low temperature of ∼ 90 °C. Vertically aligned NRs were successfully grown on the Au seed layers. For the NRs synthesized from the ZnCl{sub 2} solution of 0.17 M, when the growth time increased from 15 to 180 min, the average diameter and length increase from ∼ 350 to ∼ 1020 nm and from ∼ 1000 to ∼ 5600 nm, respectively. The increase in average diameter with the concentration of solution was observed on the NRs synthesized from the mixed solution of ZnAc and HMT. The influence of additional HMT was found on the shapes and density of the NRs. Photoluminescence (PL) spectra of the NRs synthesized from the solutions of ZnCl{sub 2} exhibited a dominant orange band (OB) emission at ∼ 640 nm associated with the excess-oxygen atoms. On the other hand, the NRs synthesized from the mixed solution of ZnAc and HMT exhibited a strong near-band-edge (NBE) emission at ∼ 380 nm, suggesting their high crystalline quality. For the NRs synthesized from the mixed solution of ZnAc and HMT, the OB emission is effectively excited at the photon energy corresponding to the A free exciton emission. For the NRs synthesized from the solution of ZnCl{sub 2}, however, the secondary phase Zn(OH){sub 2} formed at the surface regions of the NRs contributes to the excitation process for the OB emission. Photoacoustic (PA) measurements revealed that the intra-band-gap absorption band extending from 400 to 660 nm responsible for nonradiative transitions were suppressed in the NRs synthesized from the mixed solutions of ZnAc and HMT in comparison with those from the ZnCl{sub 2} solutions. - Highlights: • ZnO nanorods (NRs) were grown by Chemical bath deposition. • ZnCl{sub 2} and Zinc acetate dihydrate were used as Zn

  14. Chemical bath deposition and characterization of electrochromic thin films of sodium vanadium bronzes

    Energy Technology Data Exchange (ETDEWEB)

    Najdoski, Metodija, E-mail: metonajd@yahoo.com [Institute of Chemistry, Faculty of Natural Sciences and Mathematics, Sts. Cyril and Methodius University, POB 162, Arhimedova 5, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of); Koleva, Violeta [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Demiri, Sani [Institute of Chemistry, Faculty of Natural Sciences and Mathematics, Sts. Cyril and Methodius University, POB 162, Arhimedova 5, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We report a new chemical bath method for the deposition of vanadium bronze thin films. Black-Right-Pointing-Pointer The films are phase mixture of NaV{sub 6}O{sub 15} and Na{sub 1.1}V{sub 3}O{sub 7.9} with 10.58% lattice water. Black-Right-Pointing-Pointer The as-deposited vanadium bronze films exhibit two-step electrochromism. Black-Right-Pointing-Pointer They change their yellow-orange color to green and then from green to blue color. Black-Right-Pointing-Pointer The method allows the preparation of films on substrates with low melting point. -- Abstract: Thin yellow-orange films of sodium vanadium oxide bronzes have been prepared from a sodium-vanadium solution (1:1) at 75 Degree-Sign C and pH = 3. The composition, structure and morphology of the films have been studied by XRD, IR spectroscopy, TG and SEM-EDX analyses. It has been established that the prepared films are a phase mixture of hydrated NaV{sub 6}O{sub 15} (predominant component) and Na{sub 1.1}V{sub 3}O{sub 7.9} with total water content of 10.58%. The sodium vanadium bronze thin films exhibit two-step electrochromism followed by color change from yellow-orange to green, and then from green to blue. The cyclic voltammetry measurements on the as-deposited and annealed vanadium bronze films reveal the existence of different oxidation/reduction vanadium sites which make these films suitable for electrochromic devices. The annealing of the films at 400 Degree-Sign C changes the composition, optical and electrochemical properties.

  15. Chemical bath deposition and characterization of electrochromic thin films of sodium vanadium bronzes

    International Nuclear Information System (INIS)

    Highlights: ► We report a new chemical bath method for the deposition of vanadium bronze thin films. ► The films are phase mixture of NaV6O15 and Na1.1V3O7.9 with 10.58% lattice water. ► The as-deposited vanadium bronze films exhibit two-step electrochromism. ► They change their yellow-orange color to green and then from green to blue color. ► The method allows the preparation of films on substrates with low melting point. -- Abstract: Thin yellow-orange films of sodium vanadium oxide bronzes have been prepared from a sodium–vanadium solution (1:1) at 75 °C and pH = 3. The composition, structure and morphology of the films have been studied by XRD, IR spectroscopy, TG and SEM–EDX analyses. It has been established that the prepared films are a phase mixture of hydrated NaV6O15 (predominant component) and Na1.1V3O7.9 with total water content of 10.58%. The sodium vanadium bronze thin films exhibit two-step electrochromism followed by color change from yellow-orange to green, and then from green to blue. The cyclic voltammetry measurements on the as-deposited and annealed vanadium bronze films reveal the existence of different oxidation/reduction vanadium sites which make these films suitable for electrochromic devices. The annealing of the films at 400 °C changes the composition, optical and electrochemical properties

  16. Investigation of chemical bath deposition of CdO thin films using three different complexing agents

    Energy Technology Data Exchange (ETDEWEB)

    Khallaf, Hani [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Chen, Chia-Ta; Chang, Liann-Be [Graduate Institute of Electro-Optical Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan (China); Green Technology Research Center, Chang Gung University, Kweishan, Taoyuan 333, Taiwan (China); Lupan, Oleg [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Boulevard, MD-2004 Chisinau, Republic of Moldova (Moldova, Republic of); Dutta, Aniruddha; Heinrich, Helge [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States); Shenouda, A. [Central Metallurgical R and D Institute (CMRDI), Tebbin, P.O. Box 87, Helwan (Egypt); Chow, Lee, E-mail: Lee.Chow@ucf.edu [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States)

    2011-09-01

    Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO{sub 4} is used as Cd precursor, while H{sub 2}O{sub 2} is used as an oxidation agent. As-grown films are mainly cubic CdO{sub 2}, with some Cd(OH){sub 2} as well as CdO phases being detected. Annealing at 400 deg. C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 {+-} 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 x 10{sup 20} cm{sup -3} and a resistivity as low as 1.04 x 10{sup -2} {Omega}-cm are obtained.

  17. Fabrication and characterization of indium sulfide thin films deposited on SAMs modified substrates surfaces by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng Xu [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Lu Yongjuan; Zhang Xiaoliang [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Graduate School of Chinese Academy of Sciences, Beijing, 10049 (China); Yang Baoping [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Yi Gewen [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Jia Junhong, E-mail: jhjia@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)

    2011-11-01

    In an effort to explore the optoelectronic properties of nanostructured indium sulfide (In{sub 2}S{sub 3}) thin films for a wide range of applications, the In{sub 2}S{sub 3} thin films were successfully deposited on the APTS layers (-NH{sub 2}-terminated) modified ITO glass substrates using the chemical bath deposition technique. The surface morphology, structure and composition of the resultant In{sub 2}S{sub 3} thin films were characterized by FESEM, XRD, and XPS, respectively. Also, the correlations between the optical properties, photocurrent response and the thickness of thin films were established. According to the different deposition mechanisms on the varying SAMs terminational groups, the positive and negative micropatterned In{sub 2}S{sub 3} thin films were successfully fabricated on modified Si substrates surface combining with the ultraviolet lithography process. This offers an attractive opportunity to fabricate patterned In{sub 2}S{sub 3} thin films for controlling the spatial positioning of functional materials in microsystems.

  18. ZnS thin film deposited with chemical bath deposition process directed by different stirring speeds

    International Nuclear Information System (INIS)

    In this combined film thickness, scanning electron microscopy (SEM), X-ray diffraction and optical properties study, we explore the effects of different stirring speeds on the growth and optical properties of ZnS film deposited by CBD method. From the disclosed changes of thickness of ZnS film, we conclude that film thickness is independent of the stirring speeds in the heterogeneous process (deposition time less than 40 min), but increases with the stirring speeds and/or deposition time increasing in the homogeneous process. Grazing incident X-ray diffraction (GIXRD) and the study of optical properties disclosed that the ZnS films grown with different stirring speeds show partially crystallized film and exhibit good transmittance (70-88% in the visible region), but the stirring speeds cannot give much effects on the structure and optical properties in the homogeneous process.

  19. The effect of heteropolyacids and isopolyacids on the properties of chemically bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lejmi, N.; Savadogo, O. [Laboratoire d' Electrochimie et de Materiaux Energetiques, Ecole Polytechnique de Montreal, C.P. 6079, succ. Centre-ville, P.O. Box 6079, Qc, H3C 3A7 Montreal (Canada)

    2001-12-01

    The deposition of CdS films on ITO/glass substrates from a chemical bath containing cadmium acetate, ammonia, ammonium acetate and thiourea has been carried out with and without small amounts of heteropolyacids (HPA) (phosphotungstic acid (PTA): H{sub 3}[PW{sub 12}O{sub 40}], silicotungstic acid (STA): H{sub 4}[SiW{sub 12}O{sub 40}], phosphomolybdic acid (PMA): H{sub 3}[PMo{sub 12}O{sub 40}]) and isopolyacids (IPA) (tungstic acid (TA): H{sub 2}WO{sub 4} and molybdic acid (MA): H{sub 2}MoO{sub 4}) for different deposition times. The chemical, morphological, structural and optical properties of the films have been determined. The composition in sulphur and in cadmium of the films' surface and volume was determined for various HPA and IPA used in the deposition bath. The HPA and IPA which give the thickest film with the biggest grain size were deduced. The optical transmission at 400nm of CdS films deposited with STA at short time (20min) (50%) is higher than those of CdS deposited at longer time (6h) (7%). The optical transmission of CdS deposited with STA at short time is higher (50%) than that of CdS deposited without STA (20%). The performances of heterojunctions CdS/CdTe solar cells fabricated from CdS films deposited with and without STA and CdTe films deposited without STA have been determined. It was shown that the CdS/CdTe heterojunction solar cells fabricated from CdS films deposited with STA exhibited better photon collection efficiency and solar cell efficiency ({eta}=6%) than CdS/CdTe heterojunction solar cells fabricated from CdS films deposited without STA ({eta}=3.3%)

  20. Physical Property Characterization of Pb2+-Doped CdS Nanofilms Deposited by Chemical-Bath Deposition at Low Temperature

    Science.gov (United States)

    Díaz-Reyes, J.; Contreras-Rascón, J. I.; Galván-Arellano, M.; Arias-Cerón, J. S.; Gutiérrez-Arias, J. E. M.; Flores-Mena, J. E.; Morín-Castillo, M. M.

    2016-08-01

    Pb2 +-doped CdS nanofilms are prepared using the growth technique chemical bath deposition (CBD) under optimum conditions lead acetate at the reservoir temperature of 20 ± 2 °C. The Pb2+ molar concentration was in the range 0.0 ≤ x ≤ 0.19.67, which was determined by energy-dispersive X-ray spectroscopy (EDS). The X-ray diffraction results show that the films are of PbS-CdS composites with individual CdS and PbS planes. The X-ray diffraction (XRD) analysis and Raman scattering reveal that CdS-deposited films showed the zincblende (ZB) crystalline phase. The average grain size of the CdS films ranged from 1.21 to 6.67 nm that was determined by the Debye-Scherrer equation from ZB (111) direction, and it was confirmed by high-resolution transmission electron microscopy (HRTEM). Raman scattering shows that the lattice dynamics is characteristic of bimodal behaviour and the multipeaks adjust of the first optical longitudinal mode for the Pb2+-doped CdS denotes the Raman shift of the characteristic peak in the range of 305-298 cm-1 of the CdS crystals, which is associated with the lead ion incorporation. The films exhibit three direct bandgaps, ~2.44 eV attributed to CdS; the other varies continuously from 1.67 to 1.99 eV and another disappears as Pb2+ molar fraction increases.

  1. Structure and composition of Zn(x)Cd(1-xS) films synthesized through chemical bath deposition.

    Science.gov (United States)

    Tosun, B Selin; Pettit, Chelsea; Campbell, Stephen A; Aydil, Eray S

    2012-07-25

    Zinc cadmium sulfide (ZnxCd1-xS) thin films grown through chemical bath deposition are used in chalcopyrite solar cells as the buffer layer between the n-type zinc oxide and the p-type light absorbing chalcopyrite film. To optimize energetic band alignment and optical absorption, advanced solar cell architectures require the ability to manipulate x as a function of distance from the absorber-ZnCdS interface. Herein, we investigate the fundamental factors that govern the evolution of the composition as a function of depth in the film. By changing the initial concentrations of Zn and Cd salts in the bath, the entire range of overall compositions ranging from primarily cubic ZnS to primarily hexagonal CdS could be deposited. However, films are inhomogeneous and x varies significantly as function of distance from the film-substrate interface. Films with high overall Zn concentration (x > 0.5) exhibit a Cd-rich layer near the film-substrate interface because Cd is more reactive than Zn. This layer is typically beneath a nearly pure ZnS film that forms after the Cd-rich layers are deposited and Cd is depleted in the bath. In films with high overall Cd concentration (x < 0.5) the Zn concentration rises towards the film's surface. Fortunately, these gradients are favorable for solar cells based on low band gap chalcopyrite films.

  2. Cu{sub 2}ZnSn(S,Se){sub 4} solar cells based on chemical bath deposited precursors

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao, E-mail: chao.gao@kit.edu [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Schnabel, Thomas; Abzieher, Tobias [Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Krämmer, Christoph [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Powalla, Michael [Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Light Technology Institute (LTI), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Kalt, Heinz; Hetterich, Michael [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany)

    2014-07-01

    A low-cost method has been developed to fabricate Cu{sub 2}ZnSn(S,Se){sub 4} solar cells. By this method, firstly SnS, CuS, and ZnS layers are successively deposited on a molybdenum/soda lime glass (Mo/SLG) substrate by chemical bath deposition. The Cu{sub 2}ZnSn(S,Se){sub 4} thin films are obtained by annealing the precursor in a selenium atmosphere utilizing a graphite box in the furnace. The obtained Cu{sub 2}ZnSn(S,Se){sub 4} thin films show large crystalline grains. By optimizing the preparation process, Cu{sub 2}ZnSn(S,Se){sub 4} solar cells with efficiencies up to 4.5% are obtained. The results imply that the Cu{sub 2}ZnSn(S,Se){sub 4}/CdS interface and the back contact may be limiting factors for solar cell efficiency. - Highlights: • A chemical bath deposition method is developed to prepare Cu{sub 2}ZnSn(S,Se){sub 4} thin films. • The Cu{sub 2}ZnSn(S,Se){sub 4} thin films show good crystallization. • Solar cells with efficiencies up to 4.5% can be prepared based on the Cu{sub 2}ZnSn(S,Se){sub 4} layer. • The limiting factors for the solar cell efficiency are analyzed.

  3. Effect of different complexing agents on the properties of chemical-bath-deposited ZnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun; Wei, Aixiang, E-mail: weiax@gdut.edu.cn; Zhao, Yu

    2014-03-05

    Highlights: • To fabricate high quality ZnS films need to promote the ion-by-ion process and restrain cluster-by-cluster process. • The complexation ability of tri-sodium citrate is stronger than that of hydrazine hydrate. • The nucleation density of nuclei determine the performance of ZnS thin films. -- Abstract: Zinc sulfide (ZnS) thin films were deposited on glass substrates using the chemical bath deposition (CBD) technique. The effects of different complexing agents (tri-sodium citrate, hydrazine hydrate) and their concentrations on the structure, composition, morphology, optical properties and growth mechanism of ZnS thin films were investigated. The results indicated that the chemical-bath-deposited ZnS thin films exhibit poor crystallinity and a high Zn/S atomic ratio with an average transmittance of 75% in the range of visible light. The ZnS thin films prepared using hydrazine hydrate as the complexing agent present a more compact surface, a smaller average particle size, and a sharper absorption edge at 300–340 nm compared with those prepared using tri-sodium citrate. Based on our experimental observations and analysis, we conclude that the predominant growth mechanism of ZnS thin films is an ion-by-ion process. The nucleation density of Zn(OH){sub 2} nuclei on the substrate in the initial stage produces the different morphologies and properties of the ZnS thin films prepared using the two complexing agents.

  4. Influence of humidity on the growth characteristics and properties of chemical bath-deposited ZnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yi-Cheng; Chao, Yen-Tai [Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan (China); Yao, Pin-Chuan, E-mail: pcyao@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Dacun, Changhua 51591, Taiwan (China)

    2014-07-01

    In this study, the effect of humidity on the growth characteristics and properties of chemical bath-deposited ZnS thin films was systematically investigated. All deposition was conducted by an open CBD system under various relative humidity levels (RH) or by a hermetic CBD system as a comparison. It shows, for films deposited by an open system, the ambient humidity plays an important role in the quality of the resultant films. Damp environments lead to powdery films. Generally, all films prepared in this study using NH{sub 3} and hydrazine hydrate as the complexing agents were amorphous or poorly crystalline. For an open system, the [H{sup +}] from the dissolved carbon dioxide in the air competes with the ammonium ions in the bath solution. According to Le Châtelier's principle, more ammonia was consumed, which favors the free [Zn{sup +2}] in the solution, facilitating the homogeneous precipitation of Zn(OH){sub 2} and giving rise to a powdery film. The x-ray photoelectron spectrum shows, for an open system, the content of Zn–O compounds in the form of Zn(OH){sub 2} and ZnO, etc., is increased by the relative humidity of the environment. The visible transmittance is reduced by RH. The higher optical band gap of the as-deposited films could be attributed to the quantum confinement effects due to the small grain size of the polycrystalline ZnS films over the substrates.

  5. Dynamic scaling and optical properties of Zn(S, O,OH) thin film grown by chemical bath deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Yi; Li Bo-Yan; Dang Xiang-Yu; Wu Li; Jin Jing; Li Feng-Yan; Ao Jian-Ping; Sun Yun

    2011-01-01

    The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.From the scaling behaviour,the value of growth scaling exponent β,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.

  6. Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution

    Science.gov (United States)

    Sandoval-Paz, M. G.; Rodríguez, C. A.; Porcile-Saavedra, P. F.; Trejo-Cruz, C.

    2016-07-01

    Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films.

  7. Optimization of synthesis conditions of PbS thin films grown by chemical bath deposition using response surface methodology

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, Ersin, E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Yücel, Yasin; Beleli, Buse [Department of Chemistry, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-09-05

    Highlights: • For the first time, RSM and CCD used for optimization of PbS thin film. • Tri-sodium citrate, deposition time and temperature were independent variables. • PbS thin film band gap value was 2.20 eV under the optimum conditions. • Quality of the film was improved after chemometrics optimization. - Abstract: In this study, PbS thin films were synthesized by chemical bath deposition (CBD) under different deposition parameters. Response surface methodology (RSM) was used to optimize synthesis parameters including amount of tri-sodium citrate (0.2–0.8 mL), deposition time (14–34 h) and deposition temperature (26.6–43.4 °C) for deposition of the films. 5-level-3-factor central composite design (CCD) was employed to evaluate effects of the deposition parameters on the response (optical band gap of the films). The significant level of both the main effects and the interaction are investigated by analysis of variance (ANOVA). The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV–visible spectrophotometer. The optimum amount of tri-sodium citrate, deposition time and deposition temperature were found to be 0.7 mL, 18.07 h and 30 °C respectively. Under these conditions, the experimental band gap of PbS was 2.20 eV, which is quite good correlation with value (1.98 eV) predicted by the model.

  8. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    International Nuclear Information System (INIS)

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface

  9. Effects of Thermal Annealing on the Optical Properties of Titanium Oxide Thin Films Prepared by Chemical Bath Deposition Technique

    Directory of Open Access Journals (Sweden)

    H.U. Igwe

    2010-08-01

    Full Text Available A titanium oxide thin film was prepared by chemical bath deposition technique, deposited on glass substrates using TiO2 and NaOH solution with triethanolamine (TEA as the complexing agent. The films w ere subjected to post deposition annealing under various temperatures, 100, 150, 200, 300 and 399ºC. The thermal treatment streamlined the properties of the oxide films. The films are transparent in the entire regions of the electromagnetic spectrum, firmly adhered to the substrate and resistant to chemicals. The transmittance is between 20 and 95% while the reflectance is between 0.95 and 1%. The band gaps obtained under various thermal treatments are between 2.50 and 3.0 ev. The refractive index is between 1.52 and 2.55. The thickness achieved is in the range of 0.12-0.14 :m.These properties of the oxide film make it suitable for application in solar cells: Liquid and solid dye-sensitized photoelectrochemical solar cells, photo induced water splitting, dye synthesized solar cells, environmental purifications, gas sensors, display devices, batteries, as well as, solar cells with an organic or inorganic extremely thin absorber. These thin films are also of interest for the photooxidation of water, photocatalysis, electro chromic devices and other uses.

  10. Role of VI/II ratio on the growth of ZnO nanostructures using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N., E-mail: zelalem.urgessa@nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Oluwafemi, O.S. [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI, 5117 (South Africa); Botha, J.R. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    In this paper the growth process and morphological evolution of ZnO nanostructures were investigated in a series of experiments using chemical bath deposition. The experimental results indicate that the morphological evolution depends on the reaction conditions, particularly on OH{sup -} to Zn{sup 2+} ratio (which directly affects the pH). For low VI/II ratios, quasi-spherical nanoparticles of an average diameter 30 nm are obtained, whereas for larger VI/II ratios, nanorods with an average diameter less than 100 nm are produced, which indicates that by systematically controlling the VI/II ratio, it is possible to produce different shapes and sizes of ZnO nanostructures. A possible mechanism for the nanostructural change of the as-synthesized ZnO from particle to rod was elucidated based on the relative densities of H{sup +} and OH{sup -} in the solution.

  11. Role of VI/II ratio on the growth of ZnO nanostructures using chemical bath deposition

    International Nuclear Information System (INIS)

    In this paper the growth process and morphological evolution of ZnO nanostructures were investigated in a series of experiments using chemical bath deposition. The experimental results indicate that the morphological evolution depends on the reaction conditions, particularly on OH− to Zn2+ ratio (which directly affects the pH). For low VI/II ratios, quasi-spherical nanoparticles of an average diameter 30 nm are obtained, whereas for larger VI/II ratios, nanorods with an average diameter less than 100 nm are produced, which indicates that by systematically controlling the VI/II ratio, it is possible to produce different shapes and sizes of ZnO nanostructures. A possible mechanism for the nanostructural change of the as-synthesized ZnO from particle to rod was elucidated based on the relative densities of H+ and OH− in the solution.

  12. Formation of Hierarchical CuO Nanostructures on Copper Foil by Chemical Bath Deposition for Applications in Superhydrophobic Surfaces

    Directory of Open Access Journals (Sweden)

    Felizco Jenichi Clairvaux

    2016-01-01

    Full Text Available Hierarchical CuO nanostructures (urchin-like and grassy island structure were successfully synthesized by a simple chemical bath deposition method at low temperature of 70°C in a short reaction time of 1h. XRD analysis revealed the presence of pure crystalline monoclinic CuO. Morphological analysis revealed the formation of spherical structures composed of numerous hair-like structures. The pH of the solution was also investigated to have a great effect on the morphology of the CuO nanostructures. At lower pH, the structures tend to form urchin-like structures; while at higher pH, the structures tend to form grass-like islands. A growth mechanism was also proposed in this paper. Lastly, wettability test proved the stable superhydrophobic property of the CuO nanostructured thin film surface.

  13. Effect of Thermal Annealing on the Band GAP and Optical Properties of Chemical Bath Deposited ZnSe Thin Films

    Science.gov (United States)

    Ezema, F. I.; Ekwealor, A. B. C.; Osuji, R. U.

    2006-05-01

    Zinc selenide (ZnSe) thin films were deposited on glass substrate using the chemical bath deposition method at room temperature from aqueous solutions of zinc sulphate and sodium selenosulfate in which sodium hydroxide was employed as complexing agents. The `as-deposited' ZnSe thin films are red in color and annealed in oven at 473 K for 1 hour and on a hot plate in open air at 333 K for 5 minutes, affecting the morphological and optical properties. Optical properties such as absorption coefficient a and extinction coefficient k, were determined using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. The films have transmittance in VIS-NIR regions that range between 26 and 87%. From absorbance and transmittance spectra, the band gap energy determined ranged between 1.60 eV and 1.75 for the `as deposited' samples, and the annealed samples exhibited a band gap shift of 0.15 eV. The high transmittance of the films together with its large band gap made them good materials for selective coatings for solar cells.

  14. Role of the conducting layer substrate on TiO2 nucleation when using microwave activated chemical bath deposition

    Science.gov (United States)

    Zumeta, I.; Espinosa, R.; Ayllón, J. A.; Vigil, E.

    2002-12-01

    Nanostructured TiO2 is used in novel dye sensitized solar cells. Because of their interaction with light, thin TiO2 films are also used as coatings for self-cleaning glasses and tiles. Microwave activated chemical bath deposition represents a simple and cost-effective way to obtain nanostructured TiO2 films. It is important to study, in this technique, the role of the conducting layer used as the substrate. The influence of microwave-substrate interactions on TiO2 deposition is analysed using different substrate positions, employing substrates with different conductivities, and also using different microwave radiation powers for film deposition. We prove that a common domestic microwave oven with a large cavity and inhomogeneous radiation field can be used with equally satisfactory results. The transmittance spectra of the obtained films were studied and used to analyse film thickness and to obtain gap energy values. The results, regarding different indium-tin oxide resistivities and different substrate positions in the oven cavity, show that the interaction of the microwave field with the conducting layer is determinant in layer deposition. It has also been found that film thickness increases with the power of the applied radiation while the gap energies of the TiO2 films decrease approaching the 3.2 eV value reported for bulk anatase. This indicates that these films are not crystalline and it agrees with x-ray spectra that do not reveal any peak.

  15. Chemical bath deposition of CdS thin films: An approach to the chemical mechanism through study of the film microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Many papers have been published lately on chemical bath deposition of CdS (CBD-CdS) thin films and related materials due to the promising results obtained using CBD-CdS for the fabrication of thin-film solar cells. In spite of this little of the research proposes a realistic chemical mechanism for the deposition process based on the determination of kinetic parameters. In this paper the authors present an exhaustive study of the CBD-CdS kinetic from which they propose a new chemical mechanism which agrees with the kinetic parameters determined supported by heterogeneous catalysis concepts. Simultaneously, the dependence of the deposited film structure on the kinetic variables is studied and the results obtained corroborate the proposed mechanism. These studies have allowed the authors to establish a standard set of conditions for the fabrication of homogeneous and continuous very thin CdS films.

  16. Characterization of CuInS{sub 2} thin films prepared by chemical bath deposition and their implementation in a solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lugo, S.; López, I. [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Peña, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Calixto, M. [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, C.P. 62580, Temixco, Morelos, México (Mexico); Hernández, T. [Universidad Autónoma de Nuevo León, UANL, Facultad de Ciencias Químicas, Laboratorio de Materiales I, Av. Universidad, Cd. Universitaria 66451, San Nicolás de los Garza, Nuevo León, México (Mexico); Messina, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo”, S/N C.P. 63155, Tepic, Nayarit, México (Mexico); and others

    2014-10-31

    CuInS{sub 2} thin films were formed by the sequential deposition of In{sub 2}S{sub 3}–CuS layers on glass substrates, by chemical bath deposition technique, and heating these multilayer 1 h at 350 °C and 400 mPa. The morphology and thickness of the CuInS{sub 2} thin films were analysed by scanning electron microscopy, showing particles with elongated shape and length about 40 nm, and thickness of 267 and 348 nm for samples from 15 and 24 h of deposition time in the chemical bath of In{sub 2}S{sub 3}, respectively. The energy band gap values of the films were around 1.4 eV, whereas the electrical conductivity showed values from 64.91 to 4.11 × 10{sup −3} Ω{sup −1} cm{sup −1} for the samples of 15 and 24 h of In{sub 2}S{sub 3} deposition bath, respectively. The obtained CuInS{sub 2} films showed appropriate values for their application as an absorbing layer in photovoltaic structures of the type: glass/SnO{sub 2}:F/CdS/Sb{sub 2}S{sub 3}/CuInS{sub 2}/PbS/C/Ag. The whole structure was obtained through chemical bath deposition technique. The solar cell corresponding to 15 h of In{sub 2}S{sub 3} deposition duration bath showed energy-conversion efficiency (η) of 0.53% with open circuit voltage (V{sub oc}) of 530 mV, short circuit current density (J{sub sc}) of 2.43 mA cm{sup −2}, and fill factor (FF) of 0.41. In the case of the structure with 24 h of deposition of In{sub 2}S{sub 3} bath, η = 0.43% was measured with the following parameters: V{sub oc} = 330 mV, J{sub sc} = 4.78 mA cm{sup −2} and FF = 0.27. - Highlights: • CuInS{sub 2} films were formed by chemical bath deposition followed by a heat treatment. • Prepared CuInS{sub 2} thin films can work as an effective absorbing layer in a solar cell. • A complete solar cell structure was made by a chemical bath deposition method.

  17. Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

    Science.gov (United States)

    Wilson, K. C.; Basheer Ahamed, M.

    2016-01-01

    Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like "plum pudding". Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

  18. Chemical bath deposition and electrochromic properties of NiO{sub x} films

    Energy Technology Data Exchange (ETDEWEB)

    Ristova, M.; Velevska, J. [Physics Department, Faculty of Science, P. O. Box 162, Skopje (Macedonia); Ristov, M. [Macedonian Academy of Sciences and Arts, Skopje (Macedonia)

    2002-02-01

    Nickel oxide (NiO{sub x}) thin films were prepared by the chemical deposition method (solution growth) on two kinds of substrates: (1) glass and (2) glass/SnO{sub 2}:F. Films were thermally treated at 200C for 10min in atmosphere. The texture, microstructure and composition were examined by optical microscopy, X-ray diffraction patterns (XRD) and X-ray photoelectron spectroscopy (XPS) analysis of the surface layer. The films exhibited anode electrochromism. The optical properties of the bleached and colored state were examined with transmittance spectroscopy in the visible region and reflectance FTIR spectroscopy. An electrochromic test device (ECTD), consisting of SnO{sub 2}/NiO{sub x}/NaOH-H{sub 2}O/SnO{sub 2}, was assembled and tested by cyclic voltammetry combined with a simultaneous recording of the change of transparency at {lambda}=670nm. The coloration efficiency was evaluated to be 24.3cm{sup 2}/C. The spontaneous ex-situ change of coloration with time of the colored and bleached NiO{sub x}/SnO{sub 2}/glass was also examined.

  19. Effect of [Zn]/[S] ratios on the properties of chemical bath deposited zinc sulfide thin films

    International Nuclear Information System (INIS)

    ZnS thin films have been prepared by chemical bath deposition (CBD) technique onto glass substrates deposited at about 80 deg. C using aqueous solution of zinc sulfate hepta-hydrate, ammonium sulfate, thiourea, ammonia and hydrazine hydrate. Ammonia and hydrazine hydrate were used as complexing agents. The influence of the ratio of [Zn]/[S] on formation and properties of ZnS thin films has been investigated. The ratio of [Zn]/[S] was changed from 3:1 to 1:9 by varying volumes and/or concentrations of zinc sulfate hepta-hydrate and thiourea in the deposition solution. The structural and morphological characteristics of films have been investigated by X-ray diffraction (XRD), scanning electron microscope and UV-vis spectroscopic analysis. ZnS films were obtained with the [Zn]/[S] ratio ranged from1:1 to 1:6. In the cases of [Zn]/[S] ratio ≥ 3:1 or ≤1:9, no deposition was found. Transparent and polycrystalline ZnS film was obtained with pure-wurtzite structure at the [S]/[Zn] ratio of 1:6. The related formation mechanisms of CBD ZnS are discussed. The deposited ZnS films show good optical transmission (80-90%) in the visible region and the band gap is found to be in the range of 3.65-3.74 eV. The result is useful to further develop the CBD ZnS technology.

  20. ZnO/CdS/CuInSe{sub 2} photovoltaic cells fabricated using chemical bath deposited CdS buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, S.N.; Lam, W.W.; Qiu, C.X.; Shih, I. [Department of Electrical Engineering, McGill University, Montreal, PQ (Canada)

    1997-04-14

    CdS thin films have been prepared by using chemical bath deposition. The effects of bath temperature and concentration of NH{sub 4}OH were studied. Optimum deposition conditions were established. The resulted CdS thin films exhibit optical transmissions in excess of 90 over the majority of the solar spectrum. ZnO/CdS/CuInSe{sub 2} solar cells were fabricated on electrodeposited CuInSe{sub 2} thin films. A conversion efficiency of 6.3 was obtained with an active area of 7.8 mm{sup 2} (no AR coating)

  1. Characterization of nanostructured As{sub 2}S{sub 3} thin films synthesized at room temperature by chemical bath deposition method using various complexing agents

    Energy Technology Data Exchange (ETDEWEB)

    Ubale, Ashok U., E-mail: ashokuu@yahoo.com; Kantale, J.S.; Choudhari, D.M.; Mitkari, V.N.; Nikam, M.S.; Belkhedkar, M.R.

    2013-09-02

    Nanostructured binary As{sub 2}S{sub 3} thin films were deposited onto glass substrates by chemical bath deposition method from complexed and uncomplexed baths using complexing agents acetic acid, ethylenediaminetetraacetic acid, oxalic acid and tartaric acid. The effect of complexing agent on structural, electrical, morphological and optical properties of As{sub 2}S{sub 3} is reported. The synthesized films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrical resistivity and optical absorption measurements. The deposited films are nanocrystalline in nature with monoclinic lattice. The films deposited from uncomplexed bath and from ethylenediaminetetraacetic acid complexes are non-porous and become porous for other complexes. The electrical resistivity and optical band gap is also found complex dependent. - Highlights: • Nanocrystalline n-type As{sub 2}S{sub 3} films were grown by chemical bath deposition method. • Effect of complex on structural, electrical and optical properties was reported. • The film morphology highly depends on complex used in deposition process.

  2. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    International Nuclear Information System (INIS)

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  3. Electrochromic and electrochemical capacitive properties of tungsten oxide and its polyaniline nanocomposite films obtained by chemical bath deposition method

    International Nuclear Information System (INIS)

    Polyanine and its nanocomposite WO3/PANI films were deposited on fluorine doped tin oxide (FTO) glass slides by simple chemical bath deposition method. The morphology structure of the composite film was studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM), while the electrochemical capacitive properties were determined using cyclic voltammetry (CV), chronopotentiometry (CP) and electrochemical impedance spectroscopy (EIS). The WO3/PANI nano-composite exhibited multiple colors (electrochromism) during the CV scans, from brownish green to transparent to light green then back to brownish green. Surprisingly, the integration of the PANI with the WO3 led to synergistic performance of nanohybrid wherein a true electrochemical double layer capacitor was obtained. Also, interestingly and unlike literature reports, the CBD method led to excellent capacitance retention (>98%) of the PANI even at 1000 continuous cycles. This work demonstrates that simple CBD can be used to get WO3/PANI films that give good electrochromism and pseudo-capacitance comparable to the ones obtained by other methods. Hence the obtained nanocomposite film of WO3/PANI can be a promising material for electrochromic and energy storage applications

  4. Cu(In,Ga)Se{sub 2} solar cells with double layered buffers grown by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.Q.; Shi, J.H.; Zhang, D.W.; Liu, Q.Q.; Sun, Z.; Chen, Y.W. [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062 (China); Yang, Z. [Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240 (China); Huang, S.M., E-mail: engp5591@yahoo.com [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062 (China)

    2011-10-31

    In based mixture In{sub x}(OH,S){sub y} buffer layers deposited by chemical bath deposition technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. We report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)Se{sub 2} (CIGS) absorber and CdS or ZnS buffer by addition of a thin In based mixture layer. It is shown that the presence of thin In{sub x}(OH,S){sub y} at the CIGS absorber/CdS or ZnS buffer interfaces greatly improve the solar cell performances. The performances of CIGS cells using dual buffer layers composed of In{sub x}(OH,S){sub y}/CdS or In{sub x}(OH,S){sub y}/ZnS increased by 22.4% and 51.6%, as compared to the single and standard CdS or ZnS buffered cells, respectively.

  5. Conformal coating of Ni(OH)2 nanoflakes on carbon fibers by chemical bath deposition for efficient supercapacitor electrodes

    KAUST Repository

    Alhebshi, Nuha

    2013-01-01

    A novel supercapacitor electrode structure has been developed in which a uniform and conformal coating of nanostructured Ni(OH)2 flakes on carbon microfibers is deposited in situ by a simple chemical bath deposition process at room temperature. The microfibers conformally coated with Ni(OH) 2 nanoflakes exhibit five times higher specific capacitance compared to planar (non-conformal) Ni(OH)2 nanoflake electrodes prepared by drop casting of Ni(OH)2 powder on the carbon microfibers (1416 F g-1vs. 275 F g-1). This improvement in supercapacitor performance can be ascribed to the preservation of the three-dimensional structure of the current collector, which is a fibrous carbon fabric, even after the conformal coating of Ni(OH)2 nanoflakes. The 3-D network morphology of the fibrous carbon fabric leads to more efficient electrolyte penetration into the conformal electrode, allowing the ions to have greater access to active reaction sites. Cyclic stability testing of the conformal and planar Ni(OH)2 nanoflake electrodes, respectively, reveals 34% and 62% drop in specific capacitance after 10 000 cycles. The present study demonstrates the crucial effect that electrolyte penetration plays in determining the pseudocapacitive properties of the supercapacitor electrodes. © 2013 The Royal Society of Chemistry.

  6. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  7. Characterization of annealed Eu3+-doped ZnO flower-like morphology synthesized by chemical bath deposition method

    Science.gov (United States)

    Koao, L. F.; Dejene, B. F.; Swart, H. C.; Motloung, S. V.; Motaung, T. E.

    2016-10-01

    Undoped and europium ion (Eu3+) doped ZnO nanostructures were synthesized via the chemical bath deposition method and annealed afterwards in air at 700 °C. The X-ray diffraction measurements confirmed the hexagonal wurtzite structure for all samples. The scanning electron microscopy (SEM) revealed that the nanopowder samples were assembled in flower-like shapes for undoped and hexagonal-shaped for Eu3+-doped ZnO. Elemental energy dispersive (EDS) analysis mapping conducted on the samples revealed homogeneous distribution of Zn, O, and Eu ions. The Ultraviolet-visible (UV-vis) diffusion reflectance spectroscopy showed a decrease in the band gap with an increasing Eu3+ concentration. The photoluminescence (PL) results showed that by exciting Eu3+ (4 mol%) doped ZnO with different excitation wavelength the highest luminescence intensity was observed at an excitation wavelength of 395 nm but no emissions were observed from Eu3+. By exciting further with 465 nm the Eu3+ emissions were observed and emission from undoped ZnO was found for the first time.

  8. Studies on Hall Effect and DC Conductivity Measurements of Semiconductor Thin films Prepared by Chemical Bath Deposition (CBD method

    Directory of Open Access Journals (Sweden)

    S. Thirumavalavana

    2015-12-01

    Full Text Available Semiconductors have various useful properties that can be exploited for the realization of a large number of high performance devices in fields such as electronics and optoelectronics. Many novel semiconductors, especially in the form of thin films, are continually being developed. Thin films have drawn the attention of many researchers because of their numerous applications. As the film becomes thinner, the properties acquire greater importance in the miniaturization of elements such as resistors, transistors, capacitors, and solar cells. In the present work, copper selenide (CuSe, cadmium selenide (CdSe, zinc selenide (ZnSe, lead sulphide (PbS, zinc sulphide (ZnS, and cadmium sulphide (CdS thin films were prepared by chemical bath deposition (CBD method. The prepared thin films were analyzed by using Hall measurements in Van Der Pauw configuration (ECOPIA HMS-3000 at room temperature. The Hall parameters such as Hall mobility of the material, resistivity, carrier concentration, Hall coefficient and conductivity were determined. The DC electrical conductivity measurements were also carried out for the thin films using the conventional two – probe technique. The activation energies were also calculated from DC conductivity studies.

  9. Thermal annealing effect on structural and electrical properties of chemical bath-deposited CdS films

    Energy Technology Data Exchange (ETDEWEB)

    Hiie, J. [Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5, 19086 Tallinn (Estonia)], E-mail: jhiie@datanet.ee; Muska, K.; Valdna, V. [Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, V. [Tallinn University of Technology, Centre for Materials Research, Ehitajate tee 5, 19086 Tallinn (Estonia); Taklaja, A. [Tallinn University of Technology, Department of Radio and Communication Engineering, Ehitajate tee 5, 19086 Tallinn (Estonia); Gavrilov, A. [Tallinn University of Technology, Department of Physics, Ehitajate tee 5, 19086 Tallinn (Estonia)

    2008-08-30

    X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and electrical investigations of CdCl{sub 2}-thiourea-ammonia bath-deposited (CBD) CdS films on glass before and after post-deposition annealing have been carried out. The thiourea (TU) concentration, temperature and H{sub 2}, vacuum and isothermal ambient have been varied at low concentration of cadmium 1 mM. Coverage on glass, resistivity of CdS and mobility of charge carriers could be controlled by temperature, time and ambient of heat-treatment, and by thiourea concentration in bath. It is concluded that sintering of CdS, slow diffusion, incorporation in lattice and vaporization of cadmium chloride are the main factors of the heat-treatment process, responsible for changes in resistivity of CBD CdS.

  10. On the structure, morphology, and optical properties of chemical bath deposited Sb{sub 2}S{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico)], E-mail: kbindu_k@yahoo.com; Arato, A.; Cardenas, E.; Roy, T.K. Das; Castillo, G.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico)

    2008-03-15

    In the present paper, we have reported the room temperature growth of antimony sulphide (Sb{sub 2}S{sub 3}) thin films by chemical bath deposition and detailed characterization of these films. The films were deposited from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 deg. C. We have analysed the structure, morphology, composition and optical properties of as deposited Sb{sub 2}S{sub 3} films as well as those subjected to annealing in nitrogen atmosphere or in air. As-deposited films are amorphous to X-ray diffraction (XRD). However, the diffused rings in the electron diffraction pattern revealed the existence of nanocrystalline grains in these films. XRD analysis showed that upon annealing in nitrogen atmosphere these films transformed into polycrystalline with orthorhombic structure. Also, we have observed that during heating in air, Sb{sub 2}S{sub 3} first converts into orthorhombic form and then further heating results in the formation of Sb{sub 2}O{sub 3} crystallites. Optical bandgap energy of as deposited and annealed films was evaluated from UV-vis absorption spectra. The values obtained were 2.57 and 1.73 eV for the as-deposited and the annealed films respectively.

  11. Synthesis of Nanocrystalline SnOx (x = 1–2 Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2011-09-01

    Full Text Available Nanocrystalline SnOx (x = 1–2 thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light.

  12. Effect of Ph on the Physical Properties of ZnIn2Se4 Thin Films Grown by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    P. Babu

    2011-01-01

    Full Text Available ZnIn2Se4 (ZIS due to its potential applications in various fields, particularly as a buffer layer in the fabrication of heterojuction solar cells. In the present work, thin films of ZIS have been synthesized by a simple and economic method, chemical bath deposition at different pH values that vary from 9 to 11. The deposition was carried out for a fixed bath temperature (Tb of 90 °C and constant reaction time of 60 min. Ammonia and hydrazine hydrate were used as complexing agents. The chemical and physical properties of the deposited ZIS films were analyzed using appropriate techniques. The X-ray diffraction analysis revealed that the deposited films were polycrystalline and showed (112 peak as the preferred orientation. Scanning electron micrographs revealed that the samples had large number of granule like particles in different sizes. The optical transmittance of these samples was found to be > 75 % in the visible region and the evaluated energy band gap varied from 2.15 eV to 2.64 eV with the change of pH value in the range, 9 - 11. The detailed study of these results were presented and discussed.

  13. A chemical bath deposition route to facet-controlled Ag3PO4 thin films with improved visible light photocatalytic activity

    Science.gov (United States)

    Gunjakar, Jayavant L.; Jo, Yun Kyung; Kim, In Young; Lee, Jang Mee; Patil, Sharad B.; Pyun, Jae.-Chul.; Hwang, Seong-Ju

    2016-08-01

    A facile, economic, and reproducible chemical bath deposition (CBD) method is developed for the fabrication of facet-controlled Ag3PO4 thin films with enhanced visible light photocatalytic activity. The fine-control of bath temperature, precursor, complexing agent, substrate, and solution pH is fairly crucial in preparing the facet-selective thin film of Ag3PO4 nanocrystal. The change of precursor from silver nitrate to silver acetate makes possible the tailoring of the crystal shape of Ag3PO4 from cube to rhombic dodecahedron and also the bandgap tuning of the deposited films. The control of [Ag+]/[phosphate] ratio enables to maximize the loading amount of Ag3PO4 crystals per the unit area of the deposited film. All the fabricated Ag3PO4 thin films show high photocatalytic activity for visible light-induced degradation of organic molecules, which can be optimized by tailoring the crystal shape of the deposited crystals. This CBD method is also useful in preparing the facet-controlled hybrid film of Ag3PO4-ZnO photocatalyst. The present study clearly demonstrates the usefulness of the present CBD method for fabricating facet-controlled thin films of metal oxosalt and its nanohybrid.

  14. Performance and Loss Analyses of High-Efficiency Chemical Bath Deposition (CBD)-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells

    Science.gov (United States)

    Pudov, Alexei; Sites, James; Nakada, Tokio

    2002-06-01

    Chemically deposited ZnS has been investigated as a buffer layer alternative to cadmium sulfide (CdS) in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency of up to 18.1% based on chemical bath deposition (CBD)-ZnS{\\slash}CIGS heterostructures have been fabricated. This paper presents the performance and loss analyses of these cells based on the current-voltage (J-V) and spectral response curves, as well as comparisons with high efficiency CBD-CdS/CIGS and crystalline silicon counterparts. The CBD-ZnS/CIGS devices have effectively reached the efficiency of the current record CBD-CdS/CIGS cell. The effects of the superior current of the CBD-ZnS/CIGS cell and the superior junction quality of the CBD-CdS/CIGS cell on overall performance nearly cancel each other.

  15. Chemical bath deposition route for the synthesis of ultra-thin CuIn(S,Se){sub 2} based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo, S. [Universidad Autónoma de Nuevo León (UANL), Fac. de Ciencias Químicas, Av. Universidad S/N, Ciudad Universitaria, San Nicolás de Los Garza, Nuevo León C.P. 66451 (Mexico); Sánchez, Y.; Neuschitzer, M.; Xie, H.; Insignares-Cuello, C.; Izquierdo-Roca, V. [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona (Spain); Peña, Y. [Universidad Autónoma de Nuevo León (UANL), Fac. de Ciencias Químicas, Av. Universidad S/N, Ciudad Universitaria, San Nicolás de Los Garza, Nuevo León C.P. 66451 (Mexico); Saucedo, E., E-mail: esaucedo@irec.cat [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona (Spain)

    2015-05-01

    CuIn(S,Se){sub 2} (CISSe) photovoltaic grade thin films are usually grown by expensive vacuum based methods or chemical routes that require highly toxic precursors. In this work, we present the synthesis of CISSe absorbers by a simple chemical bath deposition (CBD) route. In the first step, In{sub 2}S{sub 3}/Cu{sub 2−x}S stack was deposited as a precursor by CBD on Mo-coated soda lime glass substrates, using respectively thioacetamide and N,N′-dimethylthiourea as S source. Then the CISSe thin films were synthesized by the precursor's selenization at 450 °C. The obtained films were characterized by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The tetragonal chalcopyrite structure of CISSe was identified by XRD and Raman, confirming that the major part of S was replaced by Se. SEM images show a compact and homogeneous film and by cross-section the thickness was estimated to be around 700 nm. Solar cells prepared with these absorbers exhibit an open circuit voltage of 369 mV, a short circuit current density of 13.7 mA/cm{sup 2}, a fill factor of 45% and an efficiency of 2.3%. - Highlights: • Deposition of In{sub 2}S{sub 3}/Cu{sub 2−x}S multi-stacks by chemical bath deposition • Synthesis of CuIn(S,Se){sub 2} via a two stage process • Demonstration of the viability of this low cost method to produce photovoltaic grade CuIn(S,Se){sub 2}.

  16. Cd{sub 1−x}Zn{sub x}S thin films with low Zn content obtained by an ammonia-free chemical bath deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Carreón-Moncada, I. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); González, L.A., E-mail: luis.gonzalez@cinvestav.edu.mx [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); Pech-Canul, M.I. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); Ramírez-Bon, R. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apartado Postal 1-798, CP. 76001 Querétaro, Qro., México (Mexico)

    2013-12-02

    Cd{sub 1−x}Zn{sub x}S films with low Zn content were obtained on glass substrates by an ammonia-free chemical bath deposition process. Alkaline reaction solutions were prepared using cadmium chloride, zinc chloride, sodium citrate, thiourea and potassium hydroxide. As a result of varying the mixture ratio between Cd and Zn precursors, microstructural studies from X-ray diffraction reveal that the resulting films have hexagonal, wurzite type, crystalline structure with changes in the preferential growth orientation. Important changes on the surface morphology and thickness of the Cd{sub 1−x}Zn{sub x}S films were also observed as effects of adding Zn to the CdS lattice. Optical studies show that Cd{sub 1−x}Zn{sub x}S thin films with energy band gaps in the range from 2.48 to 2.65 eV were obtained. - Highlights: • Cd{sub 1−x}Zn{sub x}S layers were grown on glass by ammonia-free chemical bath deposition • Films with low Zn content were obtained using reaction solutions with pH11.5 • Zn addition produced changes on the orientation growth and morphology of the films • Cd{sub 1−x}Zn{sub x}S films have energy band gap values from 2.48 to 2.65 eV.

  17. Growth and characterization of ZnO films deposited by chemical bath and annealed by microwaves (CBD-A{mu}W)

    Energy Technology Data Exchange (ETDEWEB)

    DIaz-Reyes, J [CIBA-IPN, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Martinez-Juarez, J; Garcia, M L; Galeazzi, R [CIDS-ICUAP, BUAP, 14 Sur y San Claudio S/N, CU. Edif. No. 137, Col. San Manuel, Puebla, Puebla 72570 (Mexico); Juarez, G, E-mail: jdiazr2001@yahoo.com [DIE-SEES, CINVESTAV-IPN, A. P. 14-740, Mexico, D. F. 07000 (Mexico)

    2010-06-15

    A study of the growth and the physical properties of ZnO films deposited by chemical bath technique and annealed by microwave are presented. For the deposition solution the molar ratio between zinc nitrate and urea is varied in a range of 1:1... 1:10. By X-ray obtains that layers have hexagonal polycrystalline wurtzite type unitary cell. The Raman spectra show the first order experimental Raman spectra of ZnO. The first order Raman modes are identified in the ZnO Raman spectra. The 300K photoluminescence shows radiative bands labelled by red, yellow, green and violet bands, which are associated to defects of oxygen and zinc vacancies. By EDS measurements determined their stoichiometry, which allows relating it with the intensity of radiative bands associated to oxygen and zinc vacancies.

  18. Preparation of nanocrystalline Ni doped ZnS thin films by ammonia-free chemical bath deposition method and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Sahraei, Reza, E-mail: r.sahraei@ilam.ac.ir; Darafarin, Soraya

    2014-05-01

    Nanocrystalline Ni doped ZnS thin films were deposited on quartz, silicon, and glass substrates using chemical bath deposition method in a weak acidic solution containing ethylenediamine tetra acetic acid disodium salt (Na{sub 2}EDTA) as a complexing agent for zinc ions and thioacetamide (TAA) as a sulfide source at 80 °C. The films were characterized by energy-dispersive X-ray spectrometer (EDX), inductively coupled plasma atomic emission spectroscopy (ICP-AES), Fourier transform-infrared (FT-IR) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet–visible spectrophotometry, and photoluminescence (PL) spectroscopy. UV–vis transmission data showed that the films were transparent in the visible region. The X-ray diffraction analysis showed a cubic zinc blend structure. FE-SEM revealed a homogeneous morphology and dense nanostructures. The PL spectra of the ZnS:Ni films showed two characteristic bands, one broad band centered at 430 and another narrow band at 523 nm. Furthermore, concentration quenching effect on the photoluminescence intensity has been observed. - Highlights: • Nanocrystalline ZnS:Ni thin films were prepared by the chemical bath deposition method. • The size of ZnS:Ni nanocrystals was less than 10 nm showing quantum size effect. • SEM images demonstrated a dense and uniform surface that was free of pinholes. • The deposited films were highly transparent (>70%) in the visible region. • The PL spectra of ZnS:Ni thin films showed two emission peaks at 430 and 523 nm.

  19. Sensitization of CdS nanoparticles onto reduced graphene oxide (RGO) fabricated by chemical bath deposition method for effective removal of Cr(VI)

    Energy Technology Data Exchange (ETDEWEB)

    Pawar, Rajendra C.; Lee, Caroline Sunyong, E-mail: sunyong523@gmail.com

    2013-09-16

    RGO (Reduced Graphene Oxide)–CdS composites were successfully synthesized by chemical bath deposition (CBD) method onto soda lime glass substrate at low temperature (70 °C). Their structural, optical and morphological properties were studied using X-ray diffraction, UV–Vis spectrophotometer, Raman spectroscopy, Brunauer–Emmett–Teller, Field emission scanning electron microscope and transmission electron microscope. It is clearly seen that spherically shaped CdS nanoparticles with an average diameter 30 nm are uniformly coated over the entire graphene sheet. Further, synthesized CdS nanoparticles and RGO–CdS nanocomposites were investigated for the reduction of Cr(VI) under visible light. The photocatalytic results show that photodegradation rate of RGO–CdS composites is two times higher than that of CdS nanoparticles toward reduction of Cr(VI). The improved photocatalytic performance by combining RGO with CdS nanoparticles, is attributed to its increased specific surface area (47.44 m{sup 2} g{sup −1}), efficient transportation of photoelectrons and improved absorbance of CdS nanoparticles. Therefore, it was found that RGO in RGO–CdS composites makes a significant impact on photocatalytic activity toward reduction of Cr(VI), making an excellent candidate for water refiner. - Graphical abstract: Display Omitted - Highlights: • Chemical bath deposition was used to deposit CdS nanoparticles over graphene sheets. • RGO/CdS shows effective photocatalytic reduction of Cr(VI) under visible light. • High photocurrent of RGO/CdS proved reduction in recombination due to graphene. • High specific surface area (47.44 m{sup 2} g{sup −1}) of RGO/CdS improves Cr(VI) adsorption.

  20. Optimization of the ZnS Buffer Layer by Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cells.

    Science.gov (United States)

    Jeon, Dong-Hwan; Hwang, Dae-Kue; Kim, Dae-Hwan; Kang, Jin-Kyu; Lee, Chang-Seop

    2016-05-01

    We evaluated a ZnS buffer layer prepared using a chemical bath deposition (CBD) process for application in cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells. The ZnS buffer layer showed good transmittance (above 90%) in the spectral range from 300 to 800 nm and was non-toxic compared with the CdS buffer layers normally used in CIGS solar cells. The CBD process was affected by several deposition conditions. The deposition rate was dependent on the ammonia concentration (complexing agent). When the ammonia concentration was either too high or low, a decrease in the deposition rate was observed. In addition, post heat treatments at high temperatures had detrimental influences on the ZnS buffer layers because portions of the ZnS thin films were transformed into ZnO. With optimized deposition conditions, a CIGS solar cell with a ZnS buffer layer showed an efficiency of 14.18% with a 0.23 cm2 active area under 100 mW/cm2 illumination.

  1. Thermoluminescence of Zn O thin films deposited by chemical bath; Termoluminiscencia de peliculas delgadas de ZnO depositadas por bano quimico

    Energy Technology Data Exchange (ETDEWEB)

    Camacho A, M. C.; Cruz V, C. [Universidad de Sonora, Departamento de Investigacion en Polimeros y Materiales, Apdo. Postal 130, 83000 Hermosillo, Sonora (Mexico); Bernal H, R.; Berman M, D. [Universidad de Sonora, Departamento de Investigacion en Fisica, Apdo. Postal 5-088, 83190 Hermosillo, Sonora (Mexico); Castano M, V. M., E-mail: carmencamacho@gimmunison.com [UNAM, Instituto de Fisica, Centro de Fisica Aplicada y Tecnologia Avanzada, Apdo. Postal 1-1010, 76000 Queretaro, Qro. (Mexico)

    2015-10-15

    Full text: Zn O films on Si were synthesized using a deposition method by chemical bath and thermally treated at 900 degrees C for 12 h in air. The morphological characterization by scanning electron microscopy reveals that uniform films were obtained. To investigate the thermoluminescent properties of the films were exposed to irradiation with beta particles with doses in the range from 0.5 to 128 Gy. The brightness curves obtained using a heating rate of 5 degrees C have two peaks, one at 124 and another at 270 degrees C, and a linear dependence of the integrated thermoluminescence as a function of dose. The second maximum reveals the existence of localized trapping states of potential utility in thermoluminescent dosimetry. (Author)

  2. Investigations on the synthesis, optical and electrical properties of TiO{sub 2} thin films by Chemical Bath Deposition (CBD) method

    Energy Technology Data Exchange (ETDEWEB)

    Govindasamy, Geetha [Bharathiar University, Coimbatore (India); Murugasen, Priya [Department of Physics, Saveetha Engineering College (India); Sagadevan, Suresh [Department of Physics, AMET University, Chennai (India)

    2016-03-15

    Titanium dioxide (TiO{sub 2} ) thin films were prepared by Chemical Bath Deposition (CBD) method. The X-ray diffraction (XRD) analysis was used to examine the structure and to determine the crystallite size of TiO{sub 2} thin film. The surface morphology of the film was studied using Scanning Electron Microscopy (SEM).The optical properties were studied using the UV-Visible and photoluminescence (PL) spectrum. Optical constants such as band gap, refractive index, extinction coefficient and electric susceptibility were determined. The FTIR spectrum revealed the strong presence of TiO{sub 2} . The dielectric properties of TiO{sub 2} thin films were studied for different frequencies and different temperatures. The AC electrical conductivity test revealed that the conduction depended both on the frequency and the temperature. Photoconductivity study was carried out in order to ascertain the positive photoconductivity of the TiO{sub 2} thin films. (author)

  3. Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

    Science.gov (United States)

    Blumenstein, Nina J; Hofmeister, Caroline G; Lindemann, Peter; Huang, Cheng; Baier, Johannes; Leineweber, Andreas; Wöll, Christof; Schimmel, Thomas

    2016-01-01

    Summary In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiOx surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002) texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). Infrared spectroscopy (IR) measurements were used to investigate the polystyrene brushes before and after modification. PMID:26925358

  4. Photoluminescence characteristics of CdS layers deposited in a chemical bath and their correlation to CdS/CdTe solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Perez, R.; Aguilar-Hernandez, J.; Sastre-Hernandez, J.; Ximello-Quiebras, N.; Contreras-Puente, G.; Vigil-Galan, O.; Moreno-Garcia, E. [Escuela Superior de Fisica y Matematicas del IPN, Edificio 9, UPALM, DF 07738 (Mexico); Santana-Rodriguez, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Coyoacan 04510, DF (Mexico); Morales-Acevedo, A. [CINVESTAV-IPN, Depto. de Ingenieria Electrica, Avenida IPN No. 2508, DF 07360 (Mexico)

    2006-06-15

    In this work, we study CdS films processed by chemical bath deposition (CBD) using different thiourea concentrations in the bath solution with post-thermal treatments using CdCl{sub 2}. We study the effects of the thiourea concentration on the photovoltaic performance of the CdS/CdTe solar cells, by the analysis of the I-V curve, for S/Cd ratios in the CBD solution from 3 to 8. In this range of S/Cd ratios the CdS/CdTe solar cells show variations of the open circuit voltage (V{sub oc}), the short circuit current (J{sub sc}) and the fill factor (FF). Other experimental data such as the optical transmittance and photoluminescence were obtained in order to correlate to the I-V characteristics of the solar cells. The best performance of CdS-CdTe solar cells made with CdS films obtained with a S/Cd ratio of 6 is explained in terms of the sulfur vacancies to sulfur interstitials ratio in the CBD-CdS layers. (author)

  5. The effect of thermal annealing on the optical band gap of cadmium sulphide thin films, prepared by the chemical bath deposition technique

    International Nuclear Information System (INIS)

    Cadmium sulphide thin films have been prepared by the chemical bath deposition technique (ph 11, 70 degree centigrade). Two different sets of films were prepared under varied conditions and concentrations of their ions sources (Cd2+ from cadmium nitrate, S2- from thiourea) and Na2EDTA as a complexing agent. A UV mini-Schimazu UV-VIS Spectrophotometer was used to determine the optical absorbance of the films as a function of wavelength at room temperature over the wavelength range 200 - 600 nm. The samples were then thermally annealed for thirty minutes, at temperatures of 100 degree centigrade, and 200 degree centigrade, after which the absorbance of the films were again recorded. The band gap values obtained for the sample with 0.5 M CdS as deposited, annealed at 100 degree centigrade and 200 degree centigrade were 2.1 eV, 2.2 eV and 2.3 eV respectively. Whilst the values obtained for the sample 0.15 CdS as deposited, annealed at 100 degree centigrade and annealed at 200 degree centigrade were 2.0 eV, 2.01 eV and 2.02 eV respectively. The increase in band gap with annealing temperature might be attributed to the improvement in crystallinity in the films. (au)

  6. Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS sub 2 thin film solar cells

    CERN Document Server

    Kaufmann, C A

    2002-01-01

    different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS sub 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) sub x S sub y or In(OH,O) sub x S sub y. In the case of In(OH,O) sub x S sub y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell characteristics could be developed. A CulnS sub 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS sub 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering...

  7. Preparation of Cauliflower-like ZnO Films by Chemical Bath Deposition:Photovoltaic Performance and Equivalent Circuit of Dye-sensitized Solar Cells

    Institute of Scientific and Technical Information of China (English)

    Yuqiao Wang; Xia Cui; Yuan Zhang; Xiaorui Gao; Yueming Sun

    2013-01-01

    The uniform cauliflower-like ZnO films were deposited on the conducting substrate by a chemical bath deposition in urea/water solution.The film structure and morphology were characterized by X-ray diffraction,thermogravimetric differential thermal analysis,energy dispersive spectroscopy,selected area electron diffraction,field emission scanning electron microscopy and high resolution transmission electron microscopy.The average diameter of ZnO nanoparticles and the petal thickness were 25 nm and 8 μm,respectively.Dyesensitized solar cells based on the cauliflower-like ZnO film electrode showed the short-circuit current density of 6.08 mA/cm2,the open-circuit photovoltage of 0.66 V,the fill factor of 0.55 and the overall conversion efficiency of 2.18%.The equivalent circuit of cells based on the ZnO film electrodes was measured by the electrochemical impedance spectroscopy.Furthermore,the analysis of equivalent circuit provided the relationship between the cell performance and the interfacial resistance,such as the shunt resistance and the series resistance.

  8. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    Science.gov (United States)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  9. Low-Temperature Growth of Well-Aligned ZnO Nanorod Arrays by Chemical Bath Deposition for Schottky Diode Application

    Science.gov (United States)

    Yuan, Zhaolin

    2015-04-01

    A well-aligned ZnO nanorod array (ZNRA) was successfully grown on an indium tin oxide (ITO) substrate by chemical bath deposition at low temperature. The morphology, crystalline structure, transmittance spectrum and photoluminescence spectrum of as-grown ZNRA were investigated by field emission scanning electron microscopy, x-ray diffraction, ultraviolet-visible spectroscopy and spectrophotometer, respectively. The results of these measurements showed that the ZNRA contained densely packed, aligned nanorods with diameters from 30 nm to 40 nm and a wurtzite structure. The ZNRA exhibited good optical transparency within the visible spectral range, with >80% transmission. Gold (Au) was deposited on top of the ZNRA, and the current-voltage characteristics of the resulting ITO/ZNRA/Au device in the dark were evaluated in detail. The ITO/ZNRA/Au device acted as a Schottky barrier diode with rectifying behaviour, low turn-on voltage (0.6 V), small reverse-bias saturation current (3.73 × 10-6 A), a high ideality factor (3.75), and a reasonable barrier height (0.65 V) between the ZNRA and Au.

  10. Microstructure, optical and structural characterization of Cd0.98Fe0.02S thin films co-doped with Zn by chemical bath deposition method

    Science.gov (United States)

    Pitchaimani, K.; Amalraj, L.; Muthukumaran, S.

    2016-04-01

    Fe-doped CdS (Cd0.98Fe0.02S) and Fe, Zn co-doped CdS (Cd0.98-xZnxFe0.02S (x=0.02, 0.04, and 0.06)) thin films have been successfully deposited on glass substrate by chemical bath deposition technique using aqueous ammonia solution at pH = 9.5. Phase purity of the samples having cubic structure with (111) as the preferential orientation was confirmed by X-ray diffraction technique. Shift of X-ray diffraction peak position towards higher angle side and decrease of lattice parameters, volume and crystallite size confirmed the proper incorporation of Zn into Cd-Fe-S except Zn=6%. The compositional analysis (EDX) showed that Cd, Fe, Zn and S are present in the films. The enhanced band gap and higher transmittance observed in Cd0.94Zn0.04Fe0.02S films are the effective way to use solar energy and enhance its photocatalytic activity under visible light. The enhanced green band emission than blue band by Zn-doping evidenced the existence of higher defect states.

  11. Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells.

    Science.gov (United States)

    Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

    2015-09-23

    Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

  12. A highly porous NiO/polyaniline composite film prepared by combining chemical bath deposition and electro-polymerization and its electrochromic performance

    Science.gov (United States)

    Xia, X. H.; Tu, J. P.; Zhang, J.; Wang, X. L.; Zhang, W. K.; Huang, H.

    2008-11-01

    A highly porous NiO/polyaniline (PANI) composite film was prepared on ITO glass by combining the chemical bath deposition and electro-polymerization methods, successively. The porous NiO film acts as a template for the preferential growth of PANI along NiO flakes, and the NiO/PANI composite film has an intercrossing net-like morphology. The electrochromic performance of the NiO/PANI composite film was investigated in 1 M LiClO4+1 mM HClO4/propylene carbonate (PC) by means of transmittance, cyclic voltammetry (CV) and chronoamperometry (CA) measurements. The NiO/PANI thin film exhibits a noticeable electrochromism with reversible color changes from transparent yellow to purple and presents quite good transmittance modulation with a variation of transmittance up to 56% at 550 nm. The porous NiO/polyaniline (PANI) composite film also shows good reaction kinetics with fast switching speed, and the response time for oxidation and reduction is 90 and 110 ms, respectively.

  13. A highly porous NiO/polyaniline composite film prepared by combining chemical bath deposition and electro-polymerization and its electrochromic performance

    International Nuclear Information System (INIS)

    A highly porous NiO/polyaniline (PANI) composite film was prepared on ITO glass by combining the chemical bath deposition and electro-polymerization methods, successively. The porous NiO film acts as a template for the preferential growth of PANI along NiO flakes, and the NiO/PANI composite film has an intercrossing net-like morphology. The electrochromic performance of the NiO/PANI composite film was investigated in 1 M LiClO4+1 mM HClO4/propylene carbonate (PC) by means of transmittance, cyclic voltammetry (CV) and chronoamperometry (CA) measurements. The NiO/PANI thin film exhibits a noticeable electrochromism with reversible color changes from transparent yellow to purple and presents quite good transmittance modulation with a variation of transmittance up to 56% at 550 nm. The porous NiO/polyaniline (PANI) composite film also shows good reaction kinetics with fast switching speed, and the response time for oxidation and reduction is 90 and 110 ms, respectively.

  14. Effect of reaction time on structural, morphology and optical properties of ZnO nanoflakes prepared by chemical bath deposition method

    International Nuclear Information System (INIS)

    ZnO nanoflakes have been successfully synthesized by the chemical bath deposition (CBD) method for different reaction times. X-ray diffraction (XRD) results confirm the initial formation of the cubic ZnO structure. However, increasing the reaction time resulted into the emergence of the well-known hexagonal wurtzite structure of ZnO. Scanning electron microscopy images showed the presence of agglomerated nanoflakes. The morphology was found not to depend on synthesis time. UV–vis spectra showed a partially increase in the percentage reflectance and the absorption edges red shifted to the higher wavelength with an increase in synthesis time. The highest band gap energy was obtained for ZnO synthesized for 1 min, with its estimated band gap energy of 3.91±0.08 eV. The estimated band gap decreased with an increase in the reaction time. The photoluminescent intensity of the emission peak at 473 nm decreased with an increase in reaction time.

  15. The effect of Cu2+ on structure, morphology and optical properties of flower-like ZnO synthesized using the chemical bath deposition method

    International Nuclear Information System (INIS)

    In this work undoped and Cu2+-doped ZnO nanostructures were prepared by the chemical bath deposition (CBD) method at 80 °C. The structural, optical and luminescence properties of the undoped and Cu2+-doped ZnO nanostructures were determined by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), UV–Visible Spectroscopy (UV) and Photoluminescence spectroscopy (PL) analyses. XRD analysis showed the sample prepared were hexagonal ZnO with grain sizes in the order of 46±1 nm. The estimated grain size was found not to dependent on the concentration of the Cu2+ ions used. The SEM analysis revealed that the shapes of the particles were flower-like and the addition of Cu2+ ions influenced the morphology of the samples. In the UV–Visible study the reflectance intensity decreased with an increase in the molar concentration of Cu2+ and there was no shift in the absorption edges. The PL analyses revealed that the highest luminescence intensity was obtained for the undoped ZnO. Thus Cu incorporated into the ZnO resulted in the change in its morphological, structural, and optical and luminescence properties.

  16. Effect of copper doping on structural, optical and electrical properties of Cd0.8Zn0.2S films prepared by chemical bath deposition

    Indian Academy of Sciences (India)

    K Hadasa; G Yellaiah; M Nagabhushanam

    2014-02-01

    Cd0.8Zn0.2S:Cu films of 1.3–6.1 mole percentage of copper have been grown on mica substrate by using chemical bath deposition technique. The films have been characterized by using XRD, SEM and UV spectrophotometer. X-ray diffraction studies have shown that the films are polycrystalline. The average crystallite size as measured from XRD data is in the range of 125–130 nm. The activation energies of Cd0.8Zn0.2S:Cu films, as observed from d.c. conductivity studies in the temperature range (77–300 K) studied, decreased with the increase in Cu concentration. The optical absorption studies have revealed that the energy gap increases gradually with an increase in Cu concentration, whereas conductivity studies have shown an anomalous increase in conductivity in films of 3.8 mole percentage of Cu. SEM pictures have revealed the presence of defects with spherical structure having fibre network. The variation of electrical conductivity is explained based on the defects present and by adopting tunneling mechanism.

  17. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    Science.gov (United States)

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-01

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV). PMID:26855162

  18. Low-temperature selective catalytic reduction of NO with NH3 over nanoflaky MnOx on carbon nanotubes in situ prepared via a chemical bath deposition route

    Science.gov (United States)

    Fang, Cheng; Zhang, Dengsong; Cai, Sixiang; Zhang, Lei; Huang, Lei; Li, Hongrui; Maitarad, Phornphimon; Shi, Liyi; Gao, Ruihua; Zhang, Jianping

    2013-09-01

    Nanoflaky MnOx on carbon nanotubes (nf-MnOx@CNTs) was in situ synthesized by a facile chemical bath deposition route for low-temperature selective catalytic reduction (SCR) of NO with NH3. This catalyst was mainly characterized by the techniques of X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), N2 adsorption-desorption analysis, X-ray photoelectron spectroscopy (XPS), H2 temperature-programmed reduction (H2-TPR) and NH3 temperature-programmed desorption (NH3-TPD). The SEM, TEM, XRD results and N2 adsorption-desorption analysis indicated that the CNTs were surrounded by nanoflaky MnOx and the obtained catalyst exhibited a large surface area as well. Compared with the MnOx/CNT and MnOx/TiO2 catalysts prepared by an impregnation method, the nf-MnOx@CNTs presented better NH3-SCR activity at low temperature and a more extensive operating temperature window. The XPS results showed that a higher atomic concentration of Mn4+ and more chemisorbed oxygen species existed on the surface of CNTs for nf-MnOx@CNTs. The H2-TPR and NH3-TPD results demonstrated that the nf-MnOx@CNTs possessed stronger reducing ability, more acid sites and stronger acid strength than the other two catalysts. Based on the above mentioned favourable properties, the nf-MnOx@CNT catalyst has an excellent performance in the low-temperature SCR of NO to N2 with NH3. In addition, the nf-MnOx@CNT catalyst also presented favourable stability and H2O resistance.Nanoflaky MnOx on carbon nanotubes (nf-MnOx@CNTs) was in situ synthesized by a facile chemical bath deposition route for low-temperature selective catalytic reduction (SCR) of NO with NH3. This catalyst was mainly characterized by the techniques of X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), N2 adsorption-desorption analysis, X-ray photoelectron spectroscopy (XPS), H2 temperature-programmed reduction (H2-TPR) and NH3 temperature

  19. Electrical characterization of annealed chemical-bath-deposited CdS films and their application in superstrate configuration CdTe/CdS solar cells

    International Nuclear Information System (INIS)

    Application of chemical-bath-deposited CdS in the superstrate configuration of CdTe/CdS solar cells involving CdCl2:O2 heat treatment of CdTe/CdS structures at about 400 °C is problematic. Namely, the vertical capillary surfaces (grain boundaries) between the columnar CdS grains perform as fast diffusion channels leading to the emergence of short circuits between the absorber and front contact. It was assumed that the grain boundaries contain residual hydroxy-oxide type compounds and form electrical barriers between columnar grains in the lateral direction of the CdS layer and that the electrical methods should be indicative of the behavior of grain boundaries in the annealing process. All samples were characterized by temperature dependence of DC conductivity in a temperature range of 50-300 K, X-ray diffraction, and scanning electron microscope. It has been found that the deeper layers of H2 and N2 annealed CdS preserve residual hydroxide, which released the gas phase in the recrystallization process of the chloride processing and created porosity on the CdTe/CdS interface. - Highlights: • We examine interface of CdS/CdTe structures after chloride heat treatment. • The mechanism of the formation of porosity in the CdS/CdTe interface is suggested. • Chloride heat treatment causes also recrystallization of CdS. • The gap between CdS and CdTe is minimal due to CdO on the grain boundaries of CdS

  20. Electrical characterization of annealed chemical-bath-deposited CdS films and their application in superstrate configuration CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Graf, A., E-mail: aleksandr.graf@gmail.com [Department of Physics, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Department of Materials Science, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Maticiuc, N.; Spalatu, N.; Mikli, V. [Department of Materials Science, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Mere, A. [Department of Physics, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Department of Materials Science, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Gavrilov, A. [Department of Physics, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia); Hiie, J. [Department of Materials Science, Tallinn University of Technology, 5 Ehitajate tee, 19086 Tallinn (Estonia)

    2015-05-01

    Application of chemical-bath-deposited CdS in the superstrate configuration of CdTe/CdS solar cells involving CdCl{sub 2}:O{sub 2} heat treatment of CdTe/CdS structures at about 400 °C is problematic. Namely, the vertical capillary surfaces (grain boundaries) between the columnar CdS grains perform as fast diffusion channels leading to the emergence of short circuits between the absorber and front contact. It was assumed that the grain boundaries contain residual hydroxy-oxide type compounds and form electrical barriers between columnar grains in the lateral direction of the CdS layer and that the electrical methods should be indicative of the behavior of grain boundaries in the annealing process. All samples were characterized by temperature dependence of DC conductivity in a temperature range of 50-300 K, X-ray diffraction, and scanning electron microscope. It has been found that the deeper layers of H{sub 2} and N{sub 2} annealed CdS preserve residual hydroxide, which released the gas phase in the recrystallization process of the chloride processing and created porosity on the CdTe/CdS interface. - Highlights: • We examine interface of CdS/CdTe structures after chloride heat treatment. • The mechanism of the formation of porosity in the CdS/CdTe interface is suggested. • Chloride heat treatment causes also recrystallization of CdS. • The gap between CdS and CdTe is minimal due to CdO on the grain boundaries of CdS.

  1. Preparation of highly photocatalytic active CdS/TiO{sub 2} nanocomposites by combining chemical bath deposition and microwave-assisted hydrothermal synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Li, Li, E-mail: qqhrll@163.com [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Key Laboratory of Composite Modified Material of Colleges in Heilongjiang Province, Qiqihar 161006 (China); Wang, Lili [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Hu, Tianyu [College of Environment and Resources, Jilin University, Changchun 130024 (China); Zhang, Wenzhi; Zhang, Xiuli; Chen, Xi [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China)

    2014-10-15

    CdS/TiO{sub 2} nanocomposites were prepared from Cd and Ti (1:1 M ratio) using cetyltrimethylammonium bromide by a two-step chemical bath deposition (CBD) and microwave-assisted hydrothermal synthesis (MAHS) method. A series of nanocomposites with different morphologies and activities were prepared by varying the reaction time in the MAHS (2, 4, and 6 h). The crystal structure, morphology, and surface physicochemical properties of the nanocomposites were characterized by X-ray diffraction, UV–visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and N{sub 2} adsorption–desorption measurements. The results show that the CdS/TiO{sub 2} nanocomposites were composed of anatase TiO{sub 2} and hexagonal CdS phases with strong absorption in the visible region. The surface morphologies changed slightly with increasing microwave irradiation time, while the Brunauer–Emmett–Teller surface area increased remarkably. The photocatalytic degradation of methyl orange (MO) was investigated under UV light and simulated sunlight irradiation. The photocatalytic activity of the CdS/TiO{sub 2} (6 h) composites prepared by the MAHS method was higher than those of CdS, P25, and other CdS/TiO{sub 2} nanocomposites. The CdS/TiO{sub 2} (6 h) nanocomposites significantly affected the UV and microwave-assisted photocatalytic degradation of different dyes. To elucidate the photocatalytic reaction mechanism for the CdS/TiO{sub 2} nanocomposites, controlled experiments were performed by adding different radical scavengers. - Graphical abstract: CdS/TiO{sub 2} nanocomposites were prepared using CTAB by CBD combined with MAHS method. In addition, with increasing microwave irradiation time, the morphology of CdS/TiO{sub 2} changed from popcorn-like to wedge-like structure. - Highlights: • The CdS/TiO{sub 2} was prepared by CBD combined with MAHS two-step method under CTAB. • The morphologies of as-samples were different with the time of

  2. Preparation of highly photocatalytic active CdS/TiO2 nanocomposites by combining chemical bath deposition and microwave-assisted hydrothermal synthesis

    International Nuclear Information System (INIS)

    CdS/TiO2 nanocomposites were prepared from Cd and Ti (1:1 M ratio) using cetyltrimethylammonium bromide by a two-step chemical bath deposition (CBD) and microwave-assisted hydrothermal synthesis (MAHS) method. A series of nanocomposites with different morphologies and activities were prepared by varying the reaction time in the MAHS (2, 4, and 6 h). The crystal structure, morphology, and surface physicochemical properties of the nanocomposites were characterized by X-ray diffraction, UV–visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and N2 adsorption–desorption measurements. The results show that the CdS/TiO2 nanocomposites were composed of anatase TiO2 and hexagonal CdS phases with strong absorption in the visible region. The surface morphologies changed slightly with increasing microwave irradiation time, while the Brunauer–Emmett–Teller surface area increased remarkably. The photocatalytic degradation of methyl orange (MO) was investigated under UV light and simulated sunlight irradiation. The photocatalytic activity of the CdS/TiO2 (6 h) composites prepared by the MAHS method was higher than those of CdS, P25, and other CdS/TiO2 nanocomposites. The CdS/TiO2 (6 h) nanocomposites significantly affected the UV and microwave-assisted photocatalytic degradation of different dyes. To elucidate the photocatalytic reaction mechanism for the CdS/TiO2 nanocomposites, controlled experiments were performed by adding different radical scavengers. - Graphical abstract: CdS/TiO2 nanocomposites were prepared using CTAB by CBD combined with MAHS method. In addition, with increasing microwave irradiation time, the morphology of CdS/TiO2 changed from popcorn-like to wedge-like structure. - Highlights: • The CdS/TiO2 was prepared by CBD combined with MAHS two-step method under CTAB. • The morphologies of as-samples were different with the time of microwave increased. • Compared with TiO2, as-samples show

  3. Enhancing the photovoltaic performance and stability of QDSSCs using surface reinforced Pt nanostructures with controllable morphology and superior electrocatalysis via cost-effective chemical bath deposition.

    Science.gov (United States)

    Rao, S Srinivasa; Durga, Ikkurthi Kanaka; Kang, Tae-Su; Kim, Soo-Kyoung; Punnoose, Dinah; Gopi, Chandu V V M; Eswar Reddy, Araveeti; Krishna, T N V; Kim, Hee-Je

    2016-02-28

    To make quantum-dot sensitized solar cells (QDSSCs) competitive, photovoltaic parameters such as the power conversion efficiency (PCE) and fill factor (FF) must become comparable to those of other emerging solar cell technologies. In the present study, a novel strategy has been successfully developed for a highly efficient surface-modified platinum (Pt) counter electrode (CE) with high catalytic activity and long-term stability in a polysulfide redox electrolyte. The reinforcement of the Pt surface was performed using a thin passivating layer of CuS, NiS, or CoS by simple chemical bath deposition techniques. This method was a more efficient method for reducing the electron recombination in QDSSCs. The optimized Pt/CuS CE shows a very low charge transfer resistance of 37.01 Ω, which is an order of magnitude lower than those of bare Pt (86.32 Ω), Pt/NiS (53.83 Ω), and Pt/CoS (73.51 Ω) CEs. Therefore, the Pt/CuS CEs show much greater catalytic activity in the polysulfide redox electrolyte than Pt, Pt/NiS and Pt/CoS CEs. As a result, under one-sun illumination (AM 1.5G, 100 mW cm(-2)), the Pt/CuS CE exhibits a PCE of 4.32%, which is higher than the values of 1.77%, 2.95%, and 3.25% obtained with bare Pt, Pt/CoS, and Pt/NiS CEs, respectively. The performance of the Pt/CuS CE was enhanced by the improved current density, Cu vacancies with increased S composition, and surface morphology, which enable rapid electron transport and lower the electron recombination rate for the polysulfide electrolyte redox couple. Electrochemical impedance spectroscopy and Tafel polarization revealed that the hybrid CEs reduce interfacial recombination and exhibit better electrochemical and photovoltaic performance compared with a bare Pt CE. The Pt/CuS CE also shows superior stability in the polysulfide electrolyte in a working state for over 10 h, resulting in a long-term electrode stability than Pt CE. PMID:26796086

  4. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    Science.gov (United States)

    Sheeba, N. H.; Naduvath, J.; Abraham, A.; Weiss, M. P.; Diener, Z. J.; Remillard, S. K.; DeYoung, P. A.; Philip, R. R.

    2014-10-01

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  5. Structural analysis of CdS thin films obtained by multiple dips of oscillating chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez Lazos, C.D. [Seccion de Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Rosendo, E., E-mail: erosendo@siu.buap.m [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico); Ortega, M. [Seccion de Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Oliva, A.I. [Departamento de Fisica Aplicada, Centro de Investigacion y de Estudios Avanzados, Unidad Merida, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico); Tapia, O.; Diaz, T.; Juarez, H.; Garcia, G. [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico); Rubin, M. [Facultad de Ciencias de la Computacion, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico)

    2009-11-25

    Highly oriented CdS thin films with thicknesses greater than 1 mum were deposited by multiple dips, using oscillating chemical bath deposition (OCBD) at the bath temperature of 75 deg. C, and deposition time ranging from 15 to 75 min for a single dip. Samples with different thickness were prepared by repeating the deposition process for two and three times. The films deposited by a single dip have the alpha-greenockite structure showing the (0 0 2) as preferred orientation, as indicated by the X-ray diffraction measurements. This notable characteristic is preserved in the samples obtained from two or three dips. The crystallite size for the samples deposited by a single dip depends on the deposition time, because it varied from 23 to 37 nm as the deposition time increased. Nevertheless for samples deposited by two and three dips, the grain size shows no noticeable change, being about 22 nm.

  6. Use of different Zn precursors for the deposition of Zn(S,O) buffer layers by chemical bath for chalcopyrite based Cd-free thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saez-Araoz, R.; Lux-Steiner, M.C. [Hahn Meitner Institut, Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Ennaoui, A.; Kropp, T.; Veryaeva, E. [Hahn Meitner Institut, Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co. KG, Munich (Germany)

    2008-10-15

    Progress in fabricating Cu(In,Ga)(S,Se){sub 2} (CIGSSe) solar cells with Zn(S,O) buffer layers prepared by chemical bath deposition (CBD) is discussed. The effect of different Zn salt precursors on solar cell device performance is investigated using production scale CIGSSe absorbers provided by AVANCIS GmbH and Co. KG. The CBD process has been developed at the Hahn-Meitner-Institut (HMI) using zinc nitrate, zinc sulphate or zinc chloride as zinc precursor. An average efficiency of 14.2{+-}0.8% is obtained by using one-layer CBD Zn(S,O) The dominant recombination path for well performing solar cells is discussed based on the results obtained from temperature dependent J(V) analysis. The structure and morphology of buffer layers deposited using zinc nitrate and zinc sulphate has been studied by means of transmission electron micrographs of glass/Mo/CIGSSe/Zn(S,O) structures. Results show a conformal coverage of the absorber by a Zn(S,O) layer of 15-25 nm consisting of nanocrystals with radii of {proportional_to}5 nm. XAES analysis of the buffer layer reveals a similar surface composition for buffer layers deposited with zinc nitrate and zinc sulphate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Optical and structural study of In{sub 2}S{sub 3} thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu{sub 3}BiS{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mesa, F., E-mail: fgmesar@unal.edu.co [Unidad de Estudios Universitarios, Colegio Mayor de Nuestra Señora del Rosario, Cra. 24 N° 63C-69, Bogotá (Colombia); Chamorro, W. [Université de Lorraine, Institut Jean Lamour, Nancy (France); Hurtado, M. [Departamento de Quimica, Universidad Nacional de Colombia, Cra. 30 N° 45-03, Bogotá (Colombia); Departamento de Física, Universidad de los Andes, Calle 21 No. 1-20, Bogotá (Colombia)

    2015-09-30

    Highlights: • In{sub 2}S{sub 3} thin films usually grow like an ultrathin. • Samples grown by CBD have a higher degree of coverage of the substrate unlike co-evaporation method. • Solar cells of Al/TCO/In{sub 2}S{sub 3}/Cu{sub 3}BiS{sub 3}/Mo structure. • In{sub 2}S{sub 3} thin films were deposited on Cu{sub 3}BiS{sub 3} (CBS), with of In{sub 2}S{sub 3} β-phase with tetragonal structure. - Abstract: We present the growth of In{sub 2}S{sub 3} onto Cu{sub 3}BiS{sub 3} layers and soda-lime glass (SLG) substrates by using chemical bath deposition (CBD) and physical co-evaporation. The results reveal that the microstructure and the optical properties of the In{sub 2}S{sub 3} films are highly dependent on the growth method. X-ray diffractrograms show that In{sub 2}S{sub 3} films have a higher crystallinity when growing by co-evaporation than by CBD. In{sub 2}S{sub 3} thin films grown by CBD with a thickness below 170 nm have an amorphous structure however when increasing the thickness the films exhibit two diffraction peaks associated to the (1 0 3) and (1 0 7) planes of the β-In{sub 2}S{sub 3} tetragonal structure. It was also found that the In{sub 2}S{sub 3} films present an energy bandgap (E{sub g}) of about 2.75 eV, regardless of the thickness of the samples.

  8. In{sub 6}Se{sub 7} thin films by heating thermally evaporated indium and chemical bath deposited selenium multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas, R.E.; Avellaneda, D. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Shaji, S. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico); Castillo, G.A.; Roy, T.K. Das [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico)

    2012-05-15

    Indium selenide (In{sub 6}Se{sub 7}) thin films were prepared via selenization of thermally evaporated indium thin films by dipping in sodium selenosulphate solution followed by annealing in nitrogen atmosphere. First, indium was thermally evaporated on glass substrate. Then, the indium coated glass substrates were dipped in a solution containing 80 ml 0.125 M sodium selenosulphate and 1.5 ml dilute acetic acid (25%) for 5 min. Glass/In-Se layers were annealed at 200-400 Degree-Sign C in nitrogen atmosphere (0.1 Torr) for 30 min. X-ray diffraction studies showed the formation of monoclinic In{sub 6}Se{sub 7}. Morphology of the thin films formed at different conditions was analyzed using Scanning electron microscopy. The elemental analysis was done using Energy dispersive X-ray detection. Electrical conductivity under dark and illumination conditions was evaluated. Optical band gap was computed using transmittance and reflectance spectra. The band gap value was in the range 1.8-2.6 eV corresponding to a direct allowed transition. We studied the effect of indium layer thickness and selenium deposition time on the structure, electrical and optical properties of In{sub 6}Se{sub 7} thin films.

  9. Electrodeposition of gold from formaldehyde-sulfite baths: bath stability and deposits characterization

    OpenAIRE

    Juliana L. Cardoso; Sebastião G. dos Santos Filho

    2011-01-01

    It was investigated Au(I)-sulfite baths containing formaldehyde. As a result, high stability was achieved for baths containing formaldehyde concentration close to 10 mL L-1 with a lifetime superior to 600 days. On the other hand, cyclic voltammograms indicated that the increase of formaldehyde concentration in the bath promotes decreasing of the maximum cathodic current, so that, if the formaldehyde concentration is high, the surface areal concentration of gold will be low. Also, the lowest s...

  10. Enhanced photovoltaic performance and time varied controllable growth of a CuS nanoplatelet structured thin film and its application as an efficient counter electrode for quantum dot-sensitized solar cells via a cost-effective chemical bath deposition.

    Science.gov (United States)

    Thulasi-Varma, Chebrolu Venkata; Rao, S Srinivasa; Kumar, Challa Shesha Sai Pavan; Gopi, Chandu V V M; Durga, I Kanaka; Kim, Soo-Kyoung; Punnoose, Dinah; Kim, Hee-Je

    2015-11-28

    For the first time we report a simple synthetic strategy to prepare copper sulfide counter electrodes on fluorine-doped tin oxide (FTO) substrates using the inexpensive chemical bath deposition method in the presence of hydrochloric acid (HCl) at different deposition times. CuS nanoplatelet structures were uniformly grown on the FTO substrate with a good dispersion and optimized conditions. The growth process of the CuS nanoplatelets can be controlled by changing the deposition time in the presence of HCl. HCl acts as a complexing agent as well as improving S(2-) concentration against S atoms in this one-step preparation. The photovoltaic performance was significantly improved in terms of the power conversion efficiency (PCE), short-circuit density (J(sc)), open-circuit voltage (V(oc)), and the fill factor (FF). The optimized deposition time of CuS 60 min resulted in a higher PCE of 4.06%, J(sc) of 12.92 mA cm(-2), V(oc) of 0.60 V, and a FF of 0.52 compared to CuS 50 min, CuS 70 min, and a Pt CE. The superior performance of the 60 min sample is due to the greater electrocatalytic activity and low charge transfer resistance at the interface of the CE and the polysulfide electrolyte. The concentration of Cu/S also had an important role in the formation of the CuS nanoplatelet structures. The optical bandgaps for the CuS with different morphologies were measured to be in the range of 1.98-2.28 eV. This improved photovoltaic performance is mainly attributed to the greater number of active reaction sites created by the CuS layer on the FTO substrate, which results large specific surface, superior electrical conductivity, low charge transfer resistance, and faster electron transport in the presence of HCl. Cyclic voltammetry, electrochemical impedance spectroscopy and Tafel-polarization measurements were used to investigate the electrocatalytic activity of the CuS and Pt CEs. This synthetic procedure not only provides high electrocatalytic activity for QDSSCs but could

  11. Enhanced photovoltaic performance and time varied controllable growth of a CuS nanoplatelet structured thin film and its application as an efficient counter electrode for quantum dot-sensitized solar cells via a cost-effective chemical bath deposition.

    Science.gov (United States)

    Thulasi-Varma, Chebrolu Venkata; Rao, S Srinivasa; Kumar, Challa Shesha Sai Pavan; Gopi, Chandu V V M; Durga, I Kanaka; Kim, Soo-Kyoung; Punnoose, Dinah; Kim, Hee-Je

    2015-11-28

    For the first time we report a simple synthetic strategy to prepare copper sulfide counter electrodes on fluorine-doped tin oxide (FTO) substrates using the inexpensive chemical bath deposition method in the presence of hydrochloric acid (HCl) at different deposition times. CuS nanoplatelet structures were uniformly grown on the FTO substrate with a good dispersion and optimized conditions. The growth process of the CuS nanoplatelets can be controlled by changing the deposition time in the presence of HCl. HCl acts as a complexing agent as well as improving S(2-) concentration against S atoms in this one-step preparation. The photovoltaic performance was significantly improved in terms of the power conversion efficiency (PCE), short-circuit density (J(sc)), open-circuit voltage (V(oc)), and the fill factor (FF). The optimized deposition time of CuS 60 min resulted in a higher PCE of 4.06%, J(sc) of 12.92 mA cm(-2), V(oc) of 0.60 V, and a FF of 0.52 compared to CuS 50 min, CuS 70 min, and a Pt CE. The superior performance of the 60 min sample is due to the greater electrocatalytic activity and low charge transfer resistance at the interface of the CE and the polysulfide electrolyte. The concentration of Cu/S also had an important role in the formation of the CuS nanoplatelet structures. The optical bandgaps for the CuS with different morphologies were measured to be in the range of 1.98-2.28 eV. This improved photovoltaic performance is mainly attributed to the greater number of active reaction sites created by the CuS layer on the FTO substrate, which results large specific surface, superior electrical conductivity, low charge transfer resistance, and faster electron transport in the presence of HCl. Cyclic voltammetry, electrochemical impedance spectroscopy and Tafel-polarization measurements were used to investigate the electrocatalytic activity of the CuS and Pt CEs. This synthetic procedure not only provides high electrocatalytic activity for QDSSCs but could

  12. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  13. Nanocrystalline CdS{sub 1−x}Se{sub x} alloys as thin films prepared by chemical bath deposition: Effect of x on the structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Ramirez, E.A. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Hernandez-Perez, M.A., E-mail: mhernandezp0606@ipn.mx [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Rangel-Salinas, E. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico)

    2014-12-05

    Highlights: • CdS1−xSe{sub x} films with tunable structural and optical properties were grown by CBD. • Thin films are composed by a solid solution of the CdS{sub 1−x}Se{sub x} ternary alloy. • Crystal size, band gap and photoluminescence signal, decrease with the composition. • Ternary alloys show hexagonal phase with preferential orientation on (0 0 2) plane. • Films with x ⩾ 0.5 show semi-spherical grains composed by nanoworms structures. - Abstract: CdS{sub 1−x}Se{sub x} thin films were deposited on Corning glass substrates at 75 °C by chemical bath deposition (CBD) varying the composition “x” from 0 to 1 at a constant deposition time of 120 min. The composition of the films was adjusted by modifying the concentration as well as the ratio of the precursors. The morphological, compositional, structural and optical properties of the films were analyzed using several techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), UV–Vis Spectroscopy (UV–Vis) and Photoluminescence (PL). The films grow as layers following the ion by ion mechanism, the density of the films decreases with x. Films are constituted by clusters (100–600 nm in diameter) of semispherical particles with sizes fluctuating from 10 to 20 nm. For x ⩾ 0.5 the particles are well-arranged in a “worm-like” structure. All the films are polycrystalline, to x = 0 (CdS) the cubic phase is present, the increase of composition promotes the formation of hexagonal phase or a mixture of both cubic and hexagonal phases. Preferential orientation in the (1 0 0) or (0 0 2) plane is observed. The crystal size decreases from 20 to 6 nm when x is increased. The optical properties can be easily tuned by adjusting the composition. Optical absorption analysis shows that the band gap (E{sub g}) value shifts to red in function of x (from 2.47 to 1.99 eV). Photoluminescence signal changes as “x” varies showing a regular behavior

  14. Characterization of ZnS thin films synthesized through a non-toxic precursors chemical bath

    International Nuclear Information System (INIS)

    Highlights: • High quality ZnS thin films have been deposited by chemical bath deposition technique from a non-toxic precursor’s solution. • Nanocrystalline ZnS thin films with large band gap energy were synthesized without using ammonia. • Evidence that the growing of the thin films is carried out by means of hydroxide mechanism was found. • The properties of these ZnS thin films are similar and in some cases better than the corresponding ones produced using toxic precursors such as ammonia. - Abstract: In solar cells, ZnS window layer deposited by chemical bath technique can reach the highest conversion efficiency; however, precursors used in the process normally are materials highly volatile, toxic and harmful to the environment and health (typically ammonia and hydrazine). In this work the characterization of ZnS thin films deposited by chemical bath in a non-toxic alkaline solution is reported. The effect of deposition technique (growth in several times) on the properties of the ZnS thin film was studied. The films exhibited a high percentage of optical transmission (greater than 80%); as the deposition time increased a decreasing in the band gap values from 3.83 eV to 3.71 eV was observed. From chemical analysis, the presence of ZnS and Zn(OH)2 was identified and X-ray diffraction patterns exhibited a clear peak corresponding to ZnS hexagonal phase (1 0 3) plane, which was confirmed by electron diffraction patterns. From morphological studies, compact samples with well-defined particles, low roughness, homogeneous and pinhole-free in the surface were observed. From obtained results, it is evident that deposits of ZnS–CBD using a non-toxic solution are suitable as window layer for TFSC

  15. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    OpenAIRE

    Zulkarnain Zainal; Mohd Norizam Md Daud; Azmi Zakaria; Mohd Sabri Mohd Ghazali; Atefeh Jafari; Wan Rafizah Wan Abdullah

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the ...

  16. Effects of Sodium Citrate Concentration on Electroless Ni-Fe Bath Stability and Deposition

    Science.gov (United States)

    Jung, Myung-Won; Kang, Sung K.; Lee, Jae-Ho

    2014-01-01

    In this research, electroless Ni-Fe bath stability and deposition characteristics were investigated for various sodium citrate concentrations. Complexing agents such as sodium citrate are one of the main components of such electroless plating baths. Since they could play various roles such as maintaining pH stability, preventing precipitation of metal salts, and reducing the concentrations of free metal ions, the concentration of complexing agents in the plating bath is an important parameter for electroless deposition processes. In this research, unstable baths were obtained for insufficient sodium citrate concentrations, and these phenomena were analyzed with ChemEQL. Moreover, the deposition characteristics of electroless Ni-Fe for under bump metallurgy diffusion barriers were also investigated using energy-dispersive spectroscopy and field-emission scanning electron microscopy.

  17. PREPARATION AND ANALYSIS OF Ni-P-Zn ELECTROLESS DEPOSITION FROM ALKALT BATH

    Institute of Scientific and Technical Information of China (English)

    Y.S. Huang; F.Z. Cui

    2005-01-01

    Electroless Ni-P-Zn alloys deposited from alkali bath were investigated in this paper. The deposition bath contained nickel sulfate, zinc chloride and hypophosphate. The process parameters, such as temperature, pH and zinc salt concentration were presented and discussed.The microstructure of the coatings was studied by XRD and SEM. The cathode glowing discharge characters of Ni-P-Zn depositions were studied with luminous Neon lamps. Electrodes deposited by electroless Ni-P alloys were apt to sputter during luminous working hours. Electroless Ni-P-Zn depositions improved the discharge characters of the electrodes.With the concentration of zinc in the deposition rising to 4wt%, electrode sputter was largely restrained. The thickness of the deposition also influenced the discharge characters of the electrode. To avoid electrode sputter, the concentration of zinc has to rise with the thickness of the depositions.

  18. Dual Bath Electrodeposition of Alternate Multilayer Coatings of Zinc and Nickel Deposits

    Institute of Scientific and Technical Information of China (English)

    XINWen-li; FEIJing-yin; LIANGGuo-zheng

    2004-01-01

    The synthesis of zinc and nickel alternate multilayer coatings produced by successive deposition from dual baths containing a revised zinc sulphate electrolyte and a new developed nickel bath has been investigated. Smooth and uniform zinc-nickel compositionally modulated multilayered (CMM) coatings with different multilayer configurations were obtained. The surface and cross-sectional morphologies of samples were examined using scanning electron microscopy (SEM). Cross-sectional morphology showed the layered structure of the coatings clearly.

  19. Spectral response of CdS/CdTe solar cells obtained with different S/Cd ratios for the CdS chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O.; Sastre-Hernandez, J.; Contreras-Puente, G.; Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico D. F. (Mexico); Arias-Carbajal, A. [Facultad de Quimica, IMRE, Universidad de La Habana, 10400 La Habana (Cuba); Mendoza-Perez, R. [Universidad Autonoma de la Ciudad de Mexico, 09970 Mexico, D. F. (Mexico); Santana, G. [Instituto de Investigacion en Materiales, UNAM, 04510 Mexico, D. F. (Mexico); Morales-Acevedo, A. [Departamento de Ingenieria Electrica, CINVESTAV-IPN, 07360 Mexico, D. F. (Mexico)

    2006-09-22

    In this work, the influence of the variation of chemical bath thiourea concentration in the solution for depositing CdS layers upon the spectral response of chemical bath deposition (CBD)-CdS/CdTe solar cells is studied. Although changes in the short and long wavelength range for the spectral response of the cells were observed in dependence of the thiourea concentration, no significant changes were observed in the diffusion length of minority carriers in the CdTe layer, as determined from the constant photocurrent method, when the thiourea concentration is increased in the CdS deposition solution. (author)

  20. Direct electroless Ni-P deposition on AM50 magnesium alloy from sulfate bath

    Institute of Scientific and Technical Information of China (English)

    LI Guang-yu; NIU Li-yuan; JIANG Zhong-hao; GU Chang-dong; LIAN Jian-she

    2006-01-01

    A bright electroless Ni-P deposition on AM50 magnesium alloy in a sulfate plating bath was proposed by using direct plating process with non-chromate pretreatment. The electroless Ni-P plating on AM50 magnesium alloy has an admirable appearance and good adhesion. The results indicate that the electroless Ni-P deposition with non-chromate pretreatment has better adhesion than that of zinc immersion coating. Anodic polarization curves indicate that the electroless Ni-P deposition obtained from the sulfate bath has similar corrosion-resistance to that obtained from basic nickel carbonate bath. The deposition process generates less pollutant by a non-chromate plating bath and is suitable for the magnesium alloys manufacture because of its low cost. The hardness of the electroless Ni-P plated AM50 is about HV 720.6 and HV 969.7 after heat treatments at 180 ℃ for 2 h. The wear resistance of Ni-P plated magnesium alloy specimens is about 5 to 9 times as high as that of bare magnesium alloys.

  1. Dual Bath Electrodeposition of Alternate Multilayer Coatings of Zinc and Nickel Deposits

    Institute of Scientific and Technical Information of China (English)

    XIN Wen-li; FEI Jing-yin; LIANG Guo-zheng

    2004-01-01

    The synthesis of zinc and nickel alternate multilayer coatings produced by successive deposition from dual baths containing a revised zinc sulphate electrolyte and a new developed nickel bath has been investigated. Smooth and uniform zinc-nickel compositionally modulated multilayered (CMM) coatings with different multilayer configurations were obtained. The surface and cross-sectional morphologies of samples were examined using scanning electron microscopy (SEM). Cross-sectional morphology showed the layered structure of the coatings clearly.Key Words: multilayer coating, electrodeposited zinc and nickel, electrodeposition

  2. Kinetics of electroless Ni-Cu-P deposits on silicon in a basic hypophosphite-type bath

    Institute of Scientific and Technical Information of China (English)

    Wei-Long Liu; Shu-Huei Hsieh; Wen-Jauh Chen

    2009-01-01

    Eleetroless Ni-Cu-P deposits were deposited on the Si substrate in a basic hypophosphite-type plating bath.The effects ofpH value and the metal source composition, Ni and Cu, in the plating bath on the kinetics of the Ni-Cu-P deposition were studied.The electroless Ni-Cu-P deposits were characterized by a scanning electron microscope, a transmission electron microscope, an en-ergy dispersive X-ray spectroscope, and an X-ray diffractometer.The results showed that the pH value of the plating bath had no ob- vious effect on the morphology and composition of electroless Ni-Cu-P deposits.However, the composition of the metal source, Ni and Cu, in the plating bath had great effect on the kinetics of electroless Ni-Cu-P deposition.

  3. Effect of Bath ph on Electroless Ni-P Coating Deposited on Open-Cell Aluminum Foams

    Science.gov (United States)

    Liu, Jiaan; Si, Fujian; Li, Dong; Liu, Yan; Cao, Zheng; Wang, Guoyong

    2015-09-01

    Different electroless Ni-P coatings were deposited on open-cell aluminum foams at various bath pH. The effect of bath pH on the morphology, structure, components, phases and corrosion resistance of the Ni-P coating was studied by scanning electron microscopy (SEM), confocal laser scanning microscope (CLSM), energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), immersion test and electrochemical polarization measurement, respectively. The experimental results show that the bath pH not only changed the reactivity of the bath, but also had a influence on the microstructure and anticorrosive property of electroless Ni-P coating. The high pH bath raises the thickness of Ni-P coating but decreases the content of phosphorus element in the Ni-P coating. The corrosion resistance of the coated aluminum foams increases when the bath pH rises.

  4. Dynamics of surface evolution in semiconductor thin films grown from a chemical bath.

    Science.gov (United States)

    Gupta, Indu; Mohanty, Bhaskar Chandra

    2016-01-01

    Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents αloc = 0.78 ± 0.07, α = 2.20 ± 0.08, αs = 1.49 ± 0.22, β = 0.86 ± 0.05 and βloc = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability. PMID:27615367

  5. Continuous High-Aligned Polyacrylonitrile Electrospun Nanofibers Yarns via Circular Deposition on Water Bath.

    Science.gov (United States)

    Bin, Yu; Hao, Yu; Zhu, Meifang; Wang, Hongzhi

    2016-06-01

    A novel strategy for preparing high-aligned continuous Polyacrylonitrile (PAN) electrospun nanofibers yarns is introduced. The yarn is rolled up from circular deposition, which can be changed by controlling the humidity of spinning environment. High-aligned yarn is obtained with the rolling speed of 57 m/min. Very few defects are found in the received yarn. Also the as-spun yarn is drawn in hot water bath to improve its mechanical properties further. The mechanical properties and X-Ray Diffraction (XRD) tests are systematically investigated. The tensile strength of the as-spun yarn rolled with 57 m/min can reach 240 MPa, close to that of as-spun fibers from wet spinning. Furthermore, after drawn of 5 ratios, tensile strength of yarn comes to 580 MPa, which broaden the applied fields of electrospun nanofibers. In addition, the forming mechanism of yarn in the water bath is analyzed and compared with the previous work. Actually, it can be testified experimentally that PAN nanofibers yarn has the same mechanical properties as that prepared with the other approaches with the same testing conditions in this work. The continuous high-aligned electrospun nanofibers PAN yarn via circular deposition in this paper is capable of meeting the requirement of the more applications needing of high mechanical properties and alignment degree. PMID:27427608

  6. Electroless Ni-P Deposition on Magnesium Alloy from a Sulfate Bath

    Institute of Scientific and Technical Information of China (English)

    LI Guangyu; NIU Liyuan; JIANG Qing; JIANG Zhonghao; LIAN Jianshe

    2008-01-01

    A technology for electroless Ni-P deposition on AZ91D from a low cost plating bath containing sulfate nickel was proposed.The seal pretreatment was employed before the electroless Ni-P deposition for the sake of occluding the micro holes of the cast magnesium alloy and interdicting the bubble formation in the Ni-P coating during plating process.And pickling pretreatment can provide a better adhesion between the Ni-P deposition and AZ91D substrate.The deposition speed of the Ni-P coating is 29 um/h.The technology is employed to AZ91D magnesium alloy automobile parts and can provide high hardness and high wear-resistant.The weight losses of Ni-P plated and heat-treated Ni-P plated magnesium alloy specimen are only about I/6 and 1/10 that of bare magnesium alloy specimen after l0 min abrasion wear,respectively.The hardness of the electroless Ni-P plated brake pedal support brackets is 674.1 VHN and 935.7 VHN after 2 hours heat treatments at 180 C.The adhesion of Ni-P coatings on magnesium alloy substrates meets the demands of ISO Standards 2819.The technology is environment friendly and cannot cause hazard to environment because of absence of chromate in the whole process.

  7. Simple Chemical Vapor Deposition Experiment

    Science.gov (United States)

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  8. Effect of plating time on growth of nanocrystalline Ni–P from sulphate/glycine bath by electroless deposition method

    Indian Academy of Sciences (India)

    N Latha; V Raj; M Selvam

    2013-08-01

    Nanocrystalline nickel phosphorus (NC-Ni–P) deposits from sulphate/glycine bath using a simple electroless deposition process is demonstrated. In the present investigation, nanoporous alumina films are formed on the aluminium surface by anodization process followed by deposition of nickel onto the pores by electroless plating method. Anodic aluminium oxide surface was first sensitized and activated by using palladium chloride solution before immersing into the electroless nickel bath. Electroless nickel plating was carried out from the optimized bath by changing the deposition time from 20 to 1800 s at a constant temperature of 80 °C and a pH of 4.0. Surface morphology, elemental composition, structure and reflectance of the deposits have been analysed by using scanning electron microscopy, atomic force microscopy, energy dispersive X-ray analysis, X-ray diffractometry and UV-visible spectroscopic studies, respectively. Electroless nickel deposits formed at an early stage produces dense uniform nanocrystals containing higher percentage of atomic phosphorus with cubic Ni (111) structure. As the deposition time increased, nanocrystalline sharp peak became amorphous and dimension of the crystal size varied from 54 to 72 nm.

  9. Effect of complexing agent on the photoelectrochemical properties of bath deposited CdS thin films

    International Nuclear Information System (INIS)

    In the present paper photoelectrochemical (PEC) performance of bath deposited CdS thin films based on complexing agents i.e. ammonia and triethanolamine (TEA) has been discussed. Effect of annealing has also been analyzed. The as-deposited and annealed (at 523 K for 1 h in air) films were characterized by X-ray diffraction (XRD), ultraviolet-visible (UV-vis) absorption spectroscopy, SEM, electrochemical impedance spectroscopy (EIS), and PEC properties. XRD studies revealed that the films were nanocrystalline in nature with mixed hexagonal and cubic phases. TEA complex resulted in better crystallinity. Further improvement in the crystallinity of the films was observed after air annealing. The marigold flower-like structure, in addition to flakes morphology, was observed with TEA complex, whereas for ammonia complex only flakes morphology was observed. The UV-vis absorption studies revealed that the optical absorption edge for the films with ammonia and TEA complex was around 475 nm and 500 nm, respectively. Annealing of the films resulted in red shift in the UV-vis absorption. The PEC cell performance of CdS films was found to be strongly affected by crystallinity and morphology of the films resulted due to complexing agent and annealing. The air annealed film deposited using TEA complex showed maximum short circuit current density (Jsc) and open circuit voltage (Voc) i.e. 99 μA/cm2 and 376 mV respectively, under 10 mW/cm2 of illumination. The films deposited using TEA complex showed good stability under PEC cell conditions.

  10. Electrolytic deposition and corrosion resistance of Zn–Ni coatings obtained from sulphate-chloride bath

    Indian Academy of Sciences (India)

    Katarzyna Wykpis; Magdalena Popczyk; Antoni Budniok

    2011-07-01

    Zn–Ni coatings were deposited under galvanostatic conditions on steel substrate (OH18N9). The influence of current density of deposition on the surface morphology, chemical and phase composition was investigated. The corrosion resistance of Zn–Ni coatings obtained at current density 10–25 mA cm-2 are measured, and are compared with that of metallic cadmium coating. Structural investigations were performed by the X-ray diffraction (XRD) method. The surface morphology and chemical composition of deposited coatings were studied using a scanning electron microscope (JEOL JSM-6480) with EDS attachment. Studies of electrochemical corrosion resistance were carried out in the 5% NaCl, using potentiodynamic and electrochemical impedance spectroscopy (EIS) methods. On the ground of these research, the possibility of deposition of Zn–Ni coatings contained 24–26% at. Ni was exhibited. It was stated, that surface morphology, chemical and phase composition of these coatings are practically independent on current density of deposition. On the basis of electrochemical investigations it was found that corrosion resistance of these Zn–Ni coatings is also independent of current density. These coatings are more corrosion resistant in 5% NaCl solution than metallic cadmium. It was suggested that the Zn–Ni coating may be used as a substitute for toxic cadmium.

  11. Influence of Ammonia Concentration on Morphology, Structure and Properties of Zn( O, S) Films Prepared by Chemical Bath Deposition%氨水浓度对化学浴沉积的Zn(O,S)薄膜形貌、结构和性能的影响

    Institute of Scientific and Technical Information of China (English)

    刘军; 魏爱香; 招瑜; 刘俊; 庄米雪

    2012-01-01

    The Zn(O,S) thin films were prepared by chemical bath deposition (CBD) using ZnSO4 o 7H2O and SC(NH2)2 as the precursors, C6H5O7Na3 o 2H2O as the complexing agent, NH3 o H2O as the auxiliary complexing agent and buffer agent. The obtained thin films were characterized by scanning electron microscopy (SEM) , energy dispersive spectrometer (EDS) , X-ray diffraction (XRD) and UV-Vis spectrophotometry. The morphology, structure and optical properties of Zn (O, S) thin films were investigated as a function of ammonia concentration in precursors. The results reveal that Zn( O,S) films are composed of ZnO nano-particles and ZnS nano-particles. ZnO is wurtzite structure and ZnS is amorphous. As the ammonia concentration decreasing, the proportion of ZnO decreases while that of ZnS increases gradually. In the meanwhile, S/Zn atom ratios, transmission and optical band gap all increase.%采用化学浴法,以ZnSO4·7H2O和SC( NH2)2作为反应前驱物,C6H5O7 Na3·2H2O作为络合剂,NH3·H2O 作为辅助络合剂和缓冲剂制备Zn(O,S)薄膜.采用SEM、EDS、XPS、XRD和透射光谱分析方法,研究氨水浓度对化学浴法制备的Zn(O,S)薄膜形貌、成分、结构和光学性能的影响以及Zn(O,S)薄膜的形成机理.结果表明:Zn(O,S)薄膜是由ZnO和ZnS纳米颗粒混合组成的,ZnO具有纤锌矿结构,ZnS是以非晶相存在.随着反应溶液中氨水浓度的降低,薄膜中所包含的ZnO逐渐减少,ZnS逐渐增加,S/Zn原子比逐渐增加,透射率和光学带隙也逐渐增大.

  12. Chemical deposition and characterization of thorium-alloyed lead sulfide thin films

    International Nuclear Information System (INIS)

    We present a chemical bath deposition process for alloying PbS thin films with 232Th, a stable isotope of thorium, to provide a model system for radiation damage studies. Variation of deposition parameters such as temperature, reagent concentrations and time allows controlling the properties of the resulting films. Small amounts of incorporated thorium (0.5%) strongly affected the surface topography and the orientation of the films and slowed down the growth rate. The Th appears to be incorporated as substitutional ions in the PbS lattice. - Highlights: • Chemical bath deposition has been used for alloying lead sulfide films with 232Th. • The effect of Th on the structural and optical properties of the films was studied. • Incorporation of Th affected surface topography, orientation, Eg and growth rate

  13. Flexural strength of acrylic resin repairs processed by different methods: water bath, microwave energy and chemical polymerization

    Science.gov (United States)

    ARIOLI FILHO, João Neudenir; BUTIGNON, Luís Eduardo; PEREIRA, Rodrigo de Paula; LUCAS, Matheus Guilherme; MOLLO JUNIOR, Francisco de Assis

    2011-01-01

    Denture fractures are common in daily practice, causing inconvenience to the patient and to the dentists. Denture repairs should have adequate strength, dimensional stability and color match, and should be easily and quickly performed as well as relatively inexpensive. Objective The aim of this study was to evaluate the flexural strength of acrylic resin repairs processed by different methods: warm water-bath, microwave energy, and chemical polymerization. Material and methods Sixty rectangular specimens (31x10x2.5 mm) were made with warm water-bath acrylic resin (Lucitone 550) and grouped (15 specimens per group) according to the resin type used to make repair procedure: 1) specimens of warm water-bath resin (Lucitone 550) without repair (control group); 2) specimens of warm water-bath resin repaired with warm water-bath; 3) specimens of warm water-bath resin repaired with microwave resin (Acron MC); 4) specimens of warm water-bath resin repaired with autopolymerized acrylic resin (Simplex). Flexural strength was measured with the three-point bending in a universal testing machine (MTS 810 Material Test System) with load cell of 100 kgf under constant speed of 5 mm/min. Data were analyzed statistically by Kruskal-Wallis test (p<0.05). Results The control group showed the best result (156.04±1.82 MPa). Significant differences were found among repaired specimens and the results were decreasing as follows: group 3 (43.02±2.25 MPa), group 2 (36.21±1.20 MPa) and group 4 (6.74±0.85 MPa). Conclusion All repaired specimens demonstrated lower flexural strength than the control group. Repairs with autopolymerized acrylic resin showed the lowest flexural strength. PMID:21625742

  14. Flexural strength of acrylic resin repairs processed by different methods: water bath, microwave energy and chemical polymerization

    Directory of Open Access Journals (Sweden)

    João Neudenir Arioli Filho

    2011-06-01

    Full Text Available Denture fractures are common in daily practice, causing inconvenience to the patient and to the dentists. Denture repairs should have adequate strength, dimensional stability and color match, and should be easily and quickly performed as well as relatively inexpensive. OBJECTIVE: The aim of this study was to evaluate the flexural strength of acrylic resin repairs processed by different methods: warm water-bath, microwave energy, and chemical polymerization. MATERIAL AND METHODS: Sixty rectangular specimens (31x10x2.5 mm were made with warm water-bath acrylic resin (Lucitone 550 and grouped (15 specimens per group according to the resin type used to make repair procedure: 1 specimens of warm water-bath resin (Lucitone 550 without repair (control group; 2 specimens of warm water-bath resin repaired with warm water-bath; 3 specimens of warm water-bath resin repaired with microwave resin (Acron MC; 4 specimens of warm water-bath resin repaired with autopolymerized acrylic resin (Simplex. Flexural strength was measured with the three-point bending in a universal testing machine (MTS 810 Material Test System with load cell of 100 kgf under constant speed of 5 mm/min. Data were analyzed statistically by Kruskal-Wallis test (p<0.05. RESULTS: The control group showed the best result (156.04±1.82 MPa. Significant differences were found among repaired specimens and the results were decreasing as follows: group 3 (43.02±2.25 MPa, group 2 (36.21±1.20 MPa and group 4 (6.74±0.85 MPa. CONCLUSION: All repaired specimens demonstrated lower flexural strength than the control group. Repairs with autopolymerized acrylic resin showed the lowest flexural strength.

  15. Research and Analysis on the Physical and Chemical Properties of Molten Bath with Bottom-Blowing in EAF Steelmaking Process

    Science.gov (United States)

    Wei, Guangsheng; Zhu, Rong; Dong, Kai; Ma, Guohong; Cheng, Ting

    2016-06-01

    Bottom-blowing technology is widely adopted in electric arc furnace (EAF) steelmaking to promote the molten bath fluid flow, accelerate the metallurgical reaction, and improve the quality of molten steel. In this study, a water model experiment and a computational fluid dynamics model were established to investigate the effects of bottom-blowing gas flow rate on the fluid flow characteristics in the EAF molten bath. The results show that the interaction among the bottom-blowing gas streams influences the molten bath flow field, and increasing the bottom-blowing gas flow rate can accelerate the fluid flow and decrease the volume of the dead zone. Based on industrial application research, the physical and chemical properties of the molten bath with bottom-blowing were analyzed. Compared with traditional melting conditions without bottom-blowing, bottom-blowing technology demonstrates obvious advantages in promoting the heat transfer and metallurgical reactions in the molten bath. With the bottom-blowing arrangement, the dephosphorization and decarburization rates are accelerated, the contents of FeO and T. Fe in endpoint slag are decreased, and the endpoint carbon-oxygen equilibrium of molten steel is improved.

  16. Research and Analysis on the Physical and Chemical Properties of Molten Bath with Bottom-Blowing in EAF Steelmaking Process

    Science.gov (United States)

    Wei, Guangsheng; Zhu, Rong; Dong, Kai; Ma, Guohong; Cheng, Ting

    2016-10-01

    Bottom-blowing technology is widely adopted in electric arc furnace (EAF) steelmaking to promote the molten bath fluid flow, accelerate the metallurgical reaction, and improve the quality of molten steel. In this study, a water model experiment and a computational fluid dynamics model were established to investigate the effects of bottom-blowing gas flow rate on the fluid flow characteristics in the EAF molten bath. The results show that the interaction among the bottom-blowing gas streams influences the molten bath flow field, and increasing the bottom-blowing gas flow rate can accelerate the fluid flow and decrease the volume of the dead zone. Based on industrial application research, the physical and chemical properties of the molten bath with bottom-blowing were analyzed. Compared with traditional melting conditions without bottom-blowing, bottom-blowing technology demonstrates obvious advantages in promoting the heat transfer and metallurgical reactions in the molten bath. With the bottom-blowing arrangement, the dephosphorization and decarburization rates are accelerated, the contents of FeO and T. Fe in endpoint slag are decreased, and the endpoint carbon-oxygen equilibrium of molten steel is improved.

  17. Chemical-vapor-deposition reactor

    Science.gov (United States)

    Chern, S.

    1979-01-01

    Reactor utilizes multiple stacked trays compactly arranged in paths of horizontally channeled reactant gas streams. Design allows faster and more efficient deposits of film on substrates, and reduces gas and energy consumption. Lack of dead spots that trap reactive gases reduces reactor purge time.

  18. Characterization of CBD-CdS layers with different S/Cd ratios in the chemical bath and their relation with the efficiency of CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    In previous papers we have reported the improvement of the efficiency of CdS/CdTe solar cells by varying the thiourea/CdCl2 ratio (R tc) in the chemical bath solution used for the deposition of the CdS layers. In this work, a more complete study concerning the physical properties of Chemical Bath Deposited (CBD) CdS layers studied by photoluminescence, X-ray diffraction and optical spectroscopy are correlated to the I-V characteristics under AM 1.5 sunlight and the spectral response of CdS/CdTe solar cells. It is confirmed that the optimum R tc for the CBD CdS films is R tc = 5, since in this case the best solar cells were obtained and these films show the better optical and structural characteristics

  19. Characterization of CBD-CdS layers with different S/Cd ratios in the chemical bath and their relation with the efficiency of CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio No. 9 U.P.A.L.M. 07738 Mexico D. F. (Mexico)]. E-mail: osvaldo@esfm.ipn.mx; Morales-Acevedo, A. [CINVESTAV-IPN, Electrical Engineering Departament, Av. IPN No 2508, 07360 Mexico D. F. (Mexico); Cruz-Gandarilla, F. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio No. 9 U.P.A.L.M. 07738 Mexico D. F. (Mexico); Jimenez-Escamilla, M.G. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio No. 9 U.P.A.L.M. 07738 Mexico D. F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio No. 9 U.P.A.L.M. 07738 Mexico D. F. (Mexico); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio No. 9 U.P.A.L.M. 07738 Mexico D. F. (Mexico); Sastre-Hernandez, J. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio No. 9 U.P.A.L.M. 07738 Mexico D. F. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio No. 9 U.P.A.L.M. 07738 Mexico D. F. (Mexico); Ramon-Garcia, M.L. [Centro de Investigaciones en Energia.UNAM. Privada Xochicalco s/n Col. Centro Temixco. CP. 62580 Morelos (Mexico)

    2007-05-31

    In previous papers we have reported the improvement of the efficiency of CdS/CdTe solar cells by varying the thiourea/CdCl{sub 2} ratio (R {sub tc}) in the chemical bath solution used for the deposition of the CdS layers. In this work, a more complete study concerning the physical properties of Chemical Bath Deposited (CBD) CdS layers studied by photoluminescence, X-ray diffraction and optical spectroscopy are correlated to the I-V characteristics under AM 1.5 sunlight and the spectral response of CdS/CdTe solar cells. It is confirmed that the optimum R {sub tc} for the CBD CdS films is R {sub tc} = 5, since in this case the best solar cells were obtained and these films show the better optical and structural characteristics.

  20. Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

    Indian Academy of Sciences (India)

    R H Bari; L A Patil; P P Patil

    2006-10-01

    Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted.

  1. Paraffin wax deposits and chemical inhibitors

    Energy Technology Data Exchange (ETDEWEB)

    Mendell, J.L.

    1970-01-01

    Solutions to this problem becomes necessary with the advent of extremely deep production, offshore production, and the probability of ocean-floor completions. The reasons for paraffin-wax accumulations are many and difficult to pinpoint. Inhibition of these paraffin deposits appears to be the best solution. Paraffin solvents and inhibitors are as follows: solvents, wetting agents, dispersants, and crystal modifiers. Solvents are effective, but can harm a refinery catalyst and create health hazards. Wetting agents and dispersants comprise the majority of chemicals used as paraffin wax inhibitors. Crystal modifiers are relatively new and may provide the most efficient means of reducing deposition. Evaluations of chemical paraffin inhibitors are outlined. Field test results which consider the various chemicals tested may give satisfactory results in determining which particular chemical can solve the problem of the particular situation. (38 refs.)

  2. Low-pressure, chemical vapor deposition polysilicon

    Science.gov (United States)

    Gallagher, B. D.; Crotty, G. C.

    1986-01-01

    The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system.

  3. Chemical vapor deposition coating for micromachines

    Energy Technology Data Exchange (ETDEWEB)

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  4. Bilayer ZnO nanostructure fabricated by chemical bath and its application in quantum dot sensitized solar cell

    International Nuclear Information System (INIS)

    Chemical bath method was used to synthesize bilayer ZnO nanostructure on ITO glass in the alkaline solution. As revealed by X-ray diffraction (XRD) and scanning electron microscopy (SEM), the product consists of a layered structure of ZnO nanorods at the bottom and nanoflower atop. The as-prepared sample was assembled in quantum dot sensitized solar cell (QDSSC), which obtained the incident photon to current conversion efficiency (IPCE) of 15% at 400 nm and power conversion efficiency (PCE) of 0.45%. Therefore, this novel bilayer ZnO nanostructure has the potential for application in solar cell device as the photoelectrode.

  5. Indium sulfide thin films as window layer in chemically deposited solar cells

    International Nuclear Information System (INIS)

    Indium sulfide (In2S3) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO3)3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In2S3. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In2S3 thin films are photosensitive with an electrical conductivity value in the range of 10−3–10−7 (Ω cm)−1, depending on the film preparation conditions. We have demonstrated that the In2S3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO2:F/In2S3/Sb2S3/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm2. - Highlights: • In2S3 thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In2S3 films. • We made chemically deposited solar cells using the In2S3 thin films

  6. Metallization on FDM Parts Using the Chemical Deposition Technique

    Directory of Open Access Journals (Sweden)

    Azhar Equbal

    2014-08-01

    Full Text Available Metallization of ABS (acrylonitrile-butadiene-styrene parts has been studied on flat part surfaces. These parts are fabricated on an FDM (fused deposition modeling machine using the layer-wise deposition principle using ABS as a part material. Electroless copper deposition on ABS parts was performed using two different surface preparation processes, namely ABS parts prepared using chromic acid for etching and ABS parts prepared using a solution mixture of sulphuric acid and hydrogen peroxide (H2SO4/H2O2 for etching. After surface preparations using these routes, copper (Cu is deposited electrolessly using four different acidic baths. The acidic baths used are 5 wt% CuSO4 (copper sulfate with 15 wt% of individual acids, namely HF (hydrofluoric acid, H2SO4 (sulphuric acid, H3PO4 (phosphoric acid and CH3COOH (acetic acid. Cu deposition under different acidic baths used for both the routes is presented and compared based on their electrical performance, scanning electron microscopy (SEM and energy dispersive X-ray spectrometry (EDS. The result shows that chromic acid etched samples show better electrical performance and Cu deposition in comparison to samples etched via H2SO4/H2O2.

  7. Electrowinning of Nickel from ammonical sulphate bath and effect of acetone on morphology of nickel deposit and its correlation with kinetic parameters

    Directory of Open Access Journals (Sweden)

    Borikar, D. K.

    2006-01-01

    Full Text Available The electrodeposition of nickel from nickel sulphate bath was studied in ammonia medium. The electrolytic conditions for nickel deposition was optimized at room temperature. The effect of acetone on current efficiency, morphology, stability and particle size of deposited nickel powder was studied. The effect of organic additive Tribenzyl ammonium chloride (TBAC on the morphology of nickel powder was also studied. The kinetics of electrodeposition was studied and the results were utilized in developing mathematical model. During electrodeposition the current efficiency was found to increase with increase in acetone concentration up to 15% V/V in bath solution. On further increase of acetone concentration in bath solution current efficiency decreases. The stability of the electrowon deposited nickel powder was found to be in the range of 85 to 89 %. Powder morphology was found to be dentritic, porous and irregular. The morphology was also found to be underdeveloped dentritic to rounded aggregate as the concentration of organic additive TBAC increases. The average particle size of the deposited powder was found to be decreasing as the concentration of the acetone increases. The average size of the particle is in the range of 13-16 m.

  8. Determination of electroless deposition by chemical nickeling

    Directory of Open Access Journals (Sweden)

    M. Badida

    2013-07-01

    Full Text Available Increasing of technical level and reliability of machine products in compliance with the economical and ecological terms belongs to the main trends of the industrial development. During the utilisation of these products there arise their each other contacts and the interaction with the environment. That is the reason for their surface degradation by wear effect, corrosion and other influences. The chemical nickel-plating allows autocatalytic deposition of nickel from water solutions in the form of coherent, technically very profitable coating without usage of external source of electric current. The research was aimed at evaluating the surface changes after chemical nickel-plating at various changes of technological parameters.

  9. Chemical Vapour Deposition of Large Area Graphene

    OpenAIRE

    Larsen, Martin Benjamin Barbour Spanget; Bøggild, Peter; Booth, Tim; Jørgensen, Anders Michael

    2015-01-01

    Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, ...

  10. Determination of electroless deposition by chemical nickeling

    OpenAIRE

    Badida, M.; M. Gombár; L. Sobotová; J. Kmec

    2013-01-01

    Increasing of technical level and reliability of machine products in compliance with the economical and ecological terms belongs to the main trends of the industrial development. During the utilisation of these products there arise their each other contacts and the interaction with the environment. That is the reason for their surface degradation by wear effect, corrosion and other influences. The chemical nickel-plating allows autocatalytic deposition of nickel from water solutions in the fo...

  11. Radiative transfer modeling of surface chemical deposits

    Science.gov (United States)

    Reichardt, Thomas A.; Kulp, Thomas J.

    2016-05-01

    Remote detection of a surface-bound chemical relies on the recognition of a pattern, or "signature," that is distinct from the background. Such signatures are a function of a chemical's fundamental optical properties, but also depend upon its specific morphology. Importantly, the same chemical can exhibit vastly different signatures depending on the size of particles composing the deposit. We present a parameterized model to account for such morphological effects on surface-deposited chemical signatures. This model leverages computational tools developed within the planetary and atmospheric science communities, beginning with T-matrix and ray-tracing approaches for evaluating the scattering and extinction properties of individual particles based on their size and shape, and the complex refractive index of the material itself. These individual-particle properties then serve as input to the Ambartsumian invariant imbedding solution for the reflectance of a particulate surface composed of these particles. The inputs to the model include parameters associated with a functionalized form of the particle size distribution (PSD) as well as parameters associated with the particle packing density and surface roughness. The model is numerically inverted via Sandia's Dakota package, optimizing agreement between modeled and measured reflectance spectra, which we demonstrate on data acquired on five size-selected silica powders over the 4-16 μm wavelength range. Agreements between modeled and measured reflectance spectra are assessed, while the optimized PSDs resulting from the spectral fitting are then compared to PSD data acquired from independent particle size measurements.

  12. Physical-chemical conditions of ore deposition

    Science.gov (United States)

    Barton, Paul B.

    Ore deposits form under a wide range of physical and chemical conditions, but those precipitating from hot, aqueous fluids-i.e. the hydrothermal deposits-form generally below 700°C and at pressures of only 1 or 2 kbar or less. Natural aqueous fluids in rocks may extract metal and sulfur from a variety of rock types or may acquire them as a residual heritage from a crystallizing silicate magma. Ore-forming hydrothermal fluids never appear as hot springs (except in deep, submarine situations) because they boil, mix with surface waters, and cool, thereby losing their ore-bearing ability before reaching the surface. Mineral systems function as chemical buffers and indicators just as buffers and indicators function in a chemical laboratory. By reading the record written in the buffer/indicator assemblages of minerals one can reconstruct many aspects of the former chemical environment. By studying the record of changing conditions one may deduce information regarding the processes functioning to create the succession of chemical environments and the ore deposits they represent. The example of the OH vein at Creede, Colorado, shows a pH buffered by the K-feldspar + muscovite + quartz assemblage and the covariation of S 2 and O 2 buffered by the assemblage chlorite + pyrite + quartz. Boiling of the ore fluid led to its oxidation to hematite-bearing assemblages and simultaneously produced an intensely altered, sericitic capping over the vein in response to the condensation of vapors bearing acidic components. The solubility of metals as calculated from experimental and theoretical studies of mineral solubility appears too low by at least one or two powers of ten to explain the mineralization at Creede. In contrast to Creede where the mineral stabilities all point to a relatively consistent chemistry, the Mississippi Valley type deposits present a puzzle of conflicting chemical clues that are impossible to reconcile with any single equilibrium situation. Thus we must

  13. Biocompatibility of chemical-vapour-deposited diamond.

    Science.gov (United States)

    Tang, L; Tsai, C; Gerberich, W W; Kruckeberg, L; Kania, D R

    1995-04-01

    The biocompatibility of chemical-vapour-deposited (CVD) diamond surfaces has been assessed. Our results indicate that CVD diamond is as biocompatible as titanium (Ti) and 316 stainless steel (SS). First, the amount of adsorbed and 'denatured' fibrinogen on CVD diamond was very close to that of Ti and SS. Second, both in vitro and in vivo there appears to be less cellular adhesion and activation on the surface of CVD diamond surfaces compared to Ti and SS. This evident biocompatibility, coupled with the corrosion resistance and notable mechanical integrity of CVD diamond, suggests that diamond-coated surfaces may be highly desirable in a number of biomedical applications. PMID:7654876

  14. Structural, optical and electrical properties of chemically deposited copper selenide films

    Indian Academy of Sciences (India)

    R H Bari; V Ganesan; S Potadar; L A Patil

    2009-02-01

    Stoichiometric and nonstoichiometric thin films of copper selenide have been prepared by chemical bath deposition technique at temperature below 60°C on glass substrate. The effect of nonstoichiometry on the optical, electrical and structural properties of the film was studied. The bandgap energy was observed to increase with the increase in at % of copper in composition. The grain size was also observed to increase with the decrease of at % of copper in composition. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), absorption spectroscopy, and AFM. The results are discussed and interpreted.

  15. Size dependent optical characteristics of chemically deposited nanostructured ZnS thin films

    Indian Academy of Sciences (India)

    A U Ubale; V S Sangawar; D K Kulkarni

    2007-04-01

    ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S2- and Zn2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the wavelength range 250–750 nm show that band gap energy of ZnS increases from 3.68–4.10 eV as thickness varied from 332–76 nm. The structural estimation shows variation in grain size from 6.9–17.8 nm with thickness. The thermoemf measurement indicates that films prepared by this method are of -type.

  16. Synthesis and characterization of chemically deposited CdS thin films without toxic precursors.

    Science.gov (United States)

    Fernández-Pérez, A.; Sandoval-Paz, M. G.

    2016-05-01

    Al doped and undoped CdS thin films (CdS:Al) were deposited on glass, copper and bronze substrates by chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. The structural and optical properties of the CdS films were determined by X-ray diffraction (XRD), scanning electron microscope (SEM), and simultaneous transmission- reflection spectroscopy. It was found that the properties of the films depend on the amount of Al in the growth solutions and deposition time. The increase in Al content in the reaction solution led to a smaller crystallite size and higher energy band gap that varies in the range 2.42 eV - 2.59 eV depending on the Al content.

  17. Chemical Vapor Deposition Of Silicon Carbide

    Science.gov (United States)

    Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

    1993-01-01

    Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

  18. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  19. Influence of bath PH value on microstructure and corrosion resistance of phosphate chemical conversion coating on sintered Nd-Fe-B permanent magnets

    Science.gov (United States)

    Ding, Xia; Xue, Long-fei; Wang, Xiu-chun; Ding, Kai-hong; Cui, Sheng-li; Sun, Yong-cong; Li, Mu-sen

    2016-10-01

    The effect of bath PH value on formation, microstructure and corrosion resistance of the phosphate chemical conversion (PCC) coatings as well as the effect on the magnetic property of the magnets is investigated in this paper. The results show that the coating mass and thickness increase with the decrease of the bath PH value. Scanning electron microscopy observation demonstrates that the PCC coatings are in a blocky structure with different grain size. Transmission electron microscope and X-ray diffractometer tests reveal the coatings are polycomponent and are mainly composed of neodymium phosphate hydrate and praseodymium phosphate hydrate. The electrochemical analysis and static immersion corrosion test show the corrosion resistance of the PCC coatings prepared at bath PH value of 0.52 is worst. Afterwards the corrosion resistance increases first and then decreases with the increasing of the bath PH values. The magnetic properties of all the samples with PCC treatment are decreased. The biggest loss is occurred when the bath PH value is 0.52. Taken together, the optimum PH range of 1.00-1.50 for the phosphate solution has been determined.

  20. Chemically deposited TiO2/CdS bilayer system for photoelectrochemical properties

    Indian Academy of Sciences (India)

    P R Deshmukh; U M Patil; K V Gurav; S B Kulkarni; C D Lokhande

    2012-12-01

    In the present investigation, TiO2, CdS and TiO2/CdS bilayer system have been deposited on the fluorine doped tin oxide (FTO) coated glass substrate by chemical methods. Nanograined TiO2 was deposited on FTO coated glass substrates by successive ionic layers adsorption and reaction (SILAR) method. Chemical bath deposition (CBD)method was employed to deposit CdS thin film on pre-deposited TiO2 film. A further study has beenmade for structural, surface morphological, optical and photoelectrochemical (PEC) properties of FTO/TiO2, FTO/CdS and FTO/TiO2/CdS bilayers system. PEC behaviour of FTO/TiO2/CdS bilayers was studied and compared with FTO/CdS single system. FTO/TiO2/CdS bilayers system showed improved performance of PEC properties over individual FTO/CdS thin films.

  1. Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

    2010-02-24

    Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

  2. Studying chemical vapor deposition processes with theoretical chemistry

    OpenAIRE

    Pedersen, Henrik; Elliott, Simon D.

    2014-01-01

    In a chemical vapor deposition (CVD) process, a thin film of some material is deposited onto a surface via the chemical reactions of gaseous molecules that contain the atoms needed for the film material. These chemical reactions take place on the surface and in many cases also in the gas phase. To fully understand the chemistry in the process and thereby also have the best starting point for optimizing the process, theoretical chemical modeling is an invaluable tool for providing atomic-scale...

  3. Chemical deposition methods for Cd-free buffer layers in CI(G)S solar cells: Role of window layers

    International Nuclear Information System (INIS)

    It is currently possible to prepare Cd-free Cu(In,Ga)Se2-based solar cells with efficiencies similar or higher than their CdS references. In these cells, higher efficiencies are generally obtained from soft chemical-based techniques giving conformal depositions such as chemical bath deposition (CBD), ion layer gas reaction (ILGAR) or atomic layer deposition (ALD). However most of these devices are characterized by their pronounced transient behaviour. The aim of this paper is to compare these different chemical-based methods (CBD, ALD, ILGAR...) and to try to provide evidence for the dominant influence of the interface between the Cd-free buffer layer and the window layer on the performance and on the metastable electronic behaviour of these solar cells.

  4. Preparation of polycrystalline CdS thin films by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, E.A.; Kim, B.S.; Shin, S.H.; Park, J.I.; Park, K.J. [National Industrial Technology Inst., Kwacheon (Korea, Republic of). Div. of Inorganic Chemistry

    1996-12-31

    CdS has been recognized as a promising n-type window material for CdTe/CdS and CuInSe{sub 2}/CdS heterojunction thin film solar cells. The authors prepared CdS thin films from a solution containing cadmium acetate, thiourea, ammonia, and ammonium acetate. They varied fabrication conditions such as the concentrations of reactants, reaction temperature, and heat treatment, to investigate the changes in structural and optical properties of the film. Effects of substrate on the properties were also investigated.

  5. Ultrafast optical nonlinearities in CdS nanocrystalline thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nemec, P.; Formanek, P.; Mikes, D.; Trojanek, F.; Maly, P. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics; Nemec, I. [Charles Univ., Prague (Czech Republic). Faculty of Science

    2001-03-08

    The dynamics of absorption bleaching in CdS nanocrystalline thin films were studied in the temperature interval 10-300 K and three distinct decay time constants (sub-ps, ps, and ns) were identified. We interpreted the dynamics in terms of three groups of nanocrystals with specific defects and showed that two of them are related. A close link between the temperature behaviour of the photoluminescence efficiency and that of the relative amplitude of the nanosecond component was observed and an explanation based on a microscopical model was proposed. The optical nonlinearities were studied by self-diffraction technique. A dephasing time constant shorter than 80 fs and a value of vertical stroke {chi}{sup 3} vertical stroke {approx} 6 x 10{sup -16} m{sup 2} V{sup -2} were obtained. (orig.)

  6. Variation in chemical wet deposition with meteorological conditions

    Science.gov (United States)

    Raynor, Gilbert S.; Hayes, Janet V.

    Analysis of hourly sequential precipitation samples collected at Brookhaven National Laboratory over a 4-y period shows systematic relationships between amounts of chemicals deposited in precipitation and meteorological conditions. Samples were taken by an automatic, sequential sampler and measured for pH, conductivity and the concentrations of major ions. Concurrent measurements and observations were made of the synoptic situation, precipitation type and rate, wind speed and direction, and temperature. Deposition per unit area was computed for subsets of the data classified by meteorological and time parameters. Results demonstrate that precipitation amount alone is not an adequate predictor of chemical wet deposition because of the variability of concentration in precipitation which is a complex function of emission rates and atmospheric processes. Results, however, document those conditions under which most material is deposited and those circumstances in which deposition occurs at the greatest rate. When classified by season, hydrogen and sulfate ion deposition are greatest in the summer when precipitation is lowest and least in the winter when precipitation is greatest. Nitrogen in both nitrate and ammonium has a similar but less extreme pattern. By synoptic type, all chemicals are deposited most heavily in warm front precipitation but the fraction of hydrogen and sulfate deposited in cold front and squall line hours is greater than the fraction of precipitation. All chemicals are deposited most heavily in steady rain when examined by precipitation type but thundershowers deposit chemicals of anthropogenic origin in amounts disproportionate to precipitation amounts. Results are also presented from data classified by other parameters.

  7. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Gellings, P.J.; Vendel, van de D.; Metselaar, H.S.C.; Corbach, van H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical pro

  8. Anion Effect of Zinc Source on Chemically Deposited ZnS(O,OH Films

    Directory of Open Access Journals (Sweden)

    K. Ernits

    2009-01-01

    Full Text Available The study on the anion effect of different Zn sources—Zn(CH3COO2, ZnCl2, ZnI2, Zn(NO32 and ZnSO4—on the chemical deposition of ZnS(O,OH films revealed that the growth rate and composition of the ZnS(O,OH layer depend on the instability constant (pK value of the corresponding Zn-complex Zn(Ln in the chemical bath solution. In the region of pKZn(NH32+>pKZn(Ln the ZnS(O,OH film's growth rate and ZnS concentration in films increased with the increasing pK value of the used Zn salt complex up to the pK value of the Zn[NH3]2+ complex and decreased in the region where pKZn(NH32+deposited ZnS(O,OH films did not depend on the Zn precursor's instability constant, the ZnS(O,OH film from zinc nitrate containing bath has higher band gap energy (Eg = 3.8 eV. The maximum efficiency of CISSe and CZTSSe monograin layer solar cells was gained with ZnS(O,OH buffer layer deposited from CBD solution containing Zn(CH3COO2 as Zn source, which provided the highest growth rate and ZnS concentration in the ZnS(O,OH film on glass substrates.

  9. Application of design of experiment on electrophoretic deposition of glass-ceramic coating materials from an aqueous bath

    Indian Academy of Sciences (India)

    Someswar Datta

    2000-04-01

    A process for application of abrasion- or corrosion-resistant glass-ceramic coating materials on metal substrate by electrophoretic deposition technique in an aqueous medium has been described. The effects of various process parameters, e.g. coating material concentration, time of deposition, applied current, pH of the suspension and concentration of the polymeric dispersant on the deposition efficiency have been studied. The process has been studied using a 23-factorial design technique of three independent variables; i.e. coating material concentration, applied current, and the time taken to achieve the best combination. The regression equation obtained explains the experimental results satisfactorily.

  10. Chemical vapor deposition of graphene single crystals.

    Science.gov (United States)

    Yan, Zheng; Peng, Zhiwei; Tour, James M

    2014-04-15

    As a two-dimensional (2D) sp(2)-bonded carbon allotrope, graphene has attracted enormous interest over the past decade due to its unique properties, such as ultrahigh electron mobility, uniform broadband optical absorption and high tensile strength. In the initial research, graphene was isolated from natural graphite, and limited to small sizes and low yields. Recently developed chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene for various applications. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next critical step of graphene growth relies on the synthesis of large graphene single crystals. In this Account, we first discuss graphene grain boundaries and their influence on graphene's properties. Mechanical and electrical behaviors of CVD-derived polycrystalline graphene are greatly reduced when compared to that of exfoliated graphene. We then review four representative pathways of pretreating Cu substrates to make millimeter-sized monolayer graphene grains: electrochemical polishing and high-pressure annealing of Cu substrate, adding of additional Cu enclosures, melting and resolidfying Cu substrates, and oxygen-rich Cu substrates. Due to these pretreatments, the nucleation site density on Cu substrates is greatly reduced, resulting in hexagonal-shaped graphene grains that show increased grain domain size and comparable electrical properties as to exfoliated graphene. Also, the properties of graphene can be engineered by its shape, thickness and spatial structure. Thus, we further discuss recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings. The fundamental growth mechanism and practical applications of these well-shaped graphene structures should be interesting topics and

  11. The chemical/physical and microbiological characteristics of typical bath and laundry waste waters. [waste water reclamation during manned space flight

    Science.gov (United States)

    Hypes, W. D.; Batten, C. E.; Wilkins, J. R.

    1974-01-01

    Chemical/physical and microbiological characteristics are studied of typical bath and laundry waters collected during a 12 day test in which the untreated waste waters were reused for toilet flush. Most significant changes were found for ammonia, color, methylene blue active substances, phosphates, sodium, sulfates, total organic carbon, total solids, and turbidity in comparison with tap water baseline. The mean total number of microorganisms detected in the waste waters ranged from 1 million to 10 to the 7th power cells/m1 and the mean number of possible coliforms ranged from 10 to the 5th power to 1 million. An accumulation of particulates and an objectible odor were detected in the tankage used during the 12 day reuse of the untreated waste waters. The combined bath and laundry waste waters from a family of four provided 91 percent of the toilet flush water for the same family.

  12. Chemical vapour deposition of metal oxides and phosphides.

    OpenAIRE

    Binions, R.

    2006-01-01

    This thesis investigates the deposition of thin films of main group metal phosphide and main group metal oxide compounds on glass substrates by the use of dual source atmospheric pressure chemical vapour deposition. Binary phosphide systems with tin, germanium, silicon, antimony, copper or boron have been examined. Binary oxide systems of gallium, antimony, tin or niobium have also been investigated. Additionally these systems were deposited on gas sensor substrates and evaluated as metal oxi...

  13. Structural, Optical and Electrical Properties of Nanocrystalline Cuprous Oxide Thin Film Deposited By Chemical Method

    Directory of Open Access Journals (Sweden)

    Prakash Bansilal Ahirrao

    2010-06-01

    Full Text Available Cuprous oxide (Cu2O is an interesting p-type semiconductor material used in solar cell applications.  The Modified Chemical Bath Deposition (M-CBD method is suitable for growing thin multilayer structure due to low deposition temperature. This method does not require any sophisticated instrument and substrate need not to be conductive. The nanocrystalline Cu2O thin films were deposited on glass substrates by M-CBD method. The deposited films were characterized by different characterization techniques to study structural, surface morphological, optical and electrical properties. The structural studies show that, the formation of Cu2O thin films with an average crystallite size of 14 nm. Optical studies show a direct band gap 2.48 eV. The room temperature electrical resistivity is of the order of 1.3 kW-cm and activation energy 0.33 eV. The films exhibit p-type electrical conductivity as seen by thermo-emf measurements.

  14. Physical properties of chemically deposited Bi2S3 thin films using two post-deposition treatments

    International Nuclear Information System (INIS)

    Highlights: • The post-deposition treatment by Ar plasma is a viable alternative to enhance the optical, electrical, morphological and structural properties of Bi2S3 semiconductor thin films. • The plasma treatment avoids the loss in thickness of the chemically deposited Bi2S3 thin films. • The Eg values were 1.60 eV for the thermally annealed samples and 1.56 eV for the Ar plasma treated samples. • The highest value obtained for the electrical conductivity was 7.7 × 10−2 (Ω cm)−1 in plasma treated samples. - Abstract: As-deposited bismuth sulfide (Bi2S3) thin films prepared by chemical bath deposition technique were treated with thermal annealed in air atmosphere and argon AC plasma. The as-deposited, thermally annealing and plasma treatment Bi2S3 thin films have been characterized by X-ray diffraction (XRD) analysis, atomic force microscopy analysis (AFM), transmission, specular reflectance and electrical measurements. The structural, morphological, optical and electrical properties of the films are compared. The XRD analysis showed that both post-deposition treatments, transform the thin films from amorphous to a crystalline phase. The atomic force microscopy (AFM) measurement showed a reduction of roughness for the films treated in plasma. The energy band gap value of the as-prepared film was Eg = 1.61 eV, while for the film thermally annealed was Eg = 1.60 eV and Eg = 1.56 eV for film treated with Plasma. The electrical conductivity under illumination of the as-prepared films was 3.6 × 10−5 (Ω cm)−1, whereas the conductivity value for the thermally annealed films was 2.0 × 10−3 (Ω cm)−1 and for the plasma treated films the electrical conductivity increases up to 7.7 × 10−2 (Ω cm)−1

  15. Surface chemical studies of chemical vapour deposited diamond thin films

    International Nuclear Information System (INIS)

    Polycrystalime diamond grown by low pressure chemical vapour deposition (CVD) techniques has emerged in recent years as a new material with applications in such areas as optics, electronics, radiation detectors, chemical sensors and electrochemistry. A main aim of this thesis has been to advance current knowledge of the surface chemical properties of CVD diamond to underpin the development of our understanding of the properties and potential applications of this material. Cl2 is found to adsorb dissociatively on the clean, hydrogen-free diamond surface up to sub-monolayer coverage with a sticking probability of ∼1.2x10-3. Adsorption is a non-activated process, and the sticking probability and extent of coverage decreased with increasing temperature. This was shown to contrast with the behaviour found for the interaction of chlorine with the hydrogenated diamond surface where increased sticking probabilities and saturation surface coverages were observed, and where the reactivity also increased with temperature. Thermal desorption of atomic Cl occurred over a broad temperature range m both chemisorption systems, indicating the presence of more than one binding state. Atomic hydrogen was successful in efficiently etching the bound Cl from the surface. XeF2 was found to adsorb dissociatively onto the clean diamond surface to give up to monolayer coverages of F, which formed two distinct binding states. The first state, populated at low coverage, was predominantly covalent in character, while the second state, occurring at high surface coverages, had more ionic bonding character. Pre-hydrogenation of the diamond surface increased the reactive sticking probability observed, but decreased the extent of coverage by blocking reactive sites. The semi-ionic F was readily etched by atomic hydrogen, and underwent thermal desorption at temperatures as low as 300 deg C. The covalent form was more stable, being seemingly resistant to etching and persistent to high temperatures

  16. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    Science.gov (United States)

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-04-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

  17. Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films

    Directory of Open Access Journals (Sweden)

    Ho Soonmin

    2014-09-01

    Full Text Available Ni3Pb2S2 thin films were prepared by chemical bath deposition method. Here, the objective of this research was to investigate the influence of complexing agent on the properties of films.These films were characterized using atomic force microscopy, UV-Visible spectro photometer and X-ray diffraction. It was found that, as the concentration of tartaric acid increased, film thickness increased, but, the band gap reduced. For the films prepared using 0.1M of tartaric acid, the films were uniform and completely covered the substrates.

  18. Light-induced chemical vapour deposition painting with titanium dioxide

    Science.gov (United States)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P.

    2003-03-01

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  19. The effect of Ce{sup 3+} on structure, morphology and optical properties of flower-like ZnO synthesized using the chemical bath method

    Energy Technology Data Exchange (ETDEWEB)

    Koao, L.F. [Department of Physics, University of the Free State, Qwaqwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Dejene, F.B., E-mail: dejenebf@qwa.ufs.ac.za [Department of Physics, University of the Free State, Qwaqwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa); Botha, J.R. [Physics Department, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2013-11-15

    Ce{sup 3+} doped ZnO flower-like structures were synthesized by the chemical bath deposition method (CBD). The influence of Ce{sup 3+} as a dopant on the crystallization, surface morphology, optical and luminescent properties of ZnO flowers-like structures were investigated. The X-ray diffraction (XRD) spectra of the ZnO:Ce{sup 3+}nanostructures correspond to the various planes of a single hexagonal ZnO phase for the lower Ce concentration samples. The estimated grain sizes calculated using the XRD spectra were found to be in order of 42±2 nm. The grain size was found to be not dependent on the concentration of the Ce{sup 3+} ions used up to 3 mol% of Ce. Scanning Auger electron microscopy and scanning electron micrographs indicate that the addition of Ce{sup 3+} influence the morphology of the samples. The flower-like structures obtained for the undoped and low concentration Ce doped ZnO changed into a mixed structure with the emergence of pyramid shapes for higher concentration Ce doped samples. The solid undoped and low concentration Ce doped powder showed good optical properties with a high reflectance in the visible regions. The properties, however, diminished at higher Ce concentration. The band gap energies decreased linearly with concentration from 3.0±0.1 to 2.4±0.3 eV for ZnO:0 mol% Ce{sup 3+} up to ZnO:10 mol% Ce{sup 3+}. Under 248 nm excitation, the undoped and low concentration Ce doped ZnO flower-like rods exhibited a green emission, peaking at about 559 nm. The higher Ce concentration (0.3 mol% and above) was emitted at 436 and 503 nm due to the Ce transitions. The intensity of these emission spectra of the ZnO:Ce{sup 3+} decreased with the addition of more Ce{sup 3+} ions. -- Highlights: • Ce{sup 3+} doped ZnO flower-like structures were synthesized by CBD. • Flower-like hexagonal ZnO:Ce{sup 3+}nanostructures were obtained for undoped and low mol% Ce. • ZnO changed into a mixed structure with emergence of pyramid shapes for higher mol% Ce

  20. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    OpenAIRE

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-01-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality compar...

  1. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    OpenAIRE

    Sun, Jie; Sun, Yingchun

    2007-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system pH value played an important role in this experiment. The growth rate is 12 nm/h at room temperature. Post-growth annealing not only densifies and purifies the films, but results in film crystallization a...

  2. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  3. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  4. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik;

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...... of CVD processes; however very little information on the process and its characteristics can be found. This work presents the state of the art on the CVD of tantalum in long narrow channels and a reaction mechanism is suggested based on a rudimentary model. The effects of the system pressure, temperature...... and process-setup on the deposition rates and material distribution are also presented....

  5. Chemical vapor deposition (CVD) of uranium for alpha spectrometry

    International Nuclear Information System (INIS)

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  6. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef;

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi...... increased the barrier property of the modified low-density polyethylene, polyethylene terephthalate, and polylactide by 96.48%, 99.69%, and 99.25%, respectively....

  7. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  8. A novel induction heater for chemical vapor deposition

    Science.gov (United States)

    Ong, C. W.; Wong, H. K.; Sin, K. S.; Yip, S. T.; Chik, K. P.

    1989-06-01

    We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.

  9. Deposition of diamond and boron nitride films by plasma chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Albella, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Gomez-Aleixandre, C. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Sanchez-Garrido, O. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Vazquez, L. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Martinez-Duart, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.

    1995-01-01

    The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters (i.e. gas mixture, substrate conditioning, plasma discharges etc.) which favour the formation of the cubic phase. Most of the work is devoted to diamond owing to the large progress attained in this material. In fact, the use of diamond as a hard protective coating is now on a commercial scale. By contrast, the preparation of c-BN layers with good characteristics still needs of further research. ((orig.))

  10. The atmospheric chemical vapour deposition of coatings on glass

    CERN Document Server

    Sanderson, K D

    1996-01-01

    The deposition of thin films of indium oxide, tin doped indium oxide (ITO) and titanium nitride for solar control applications have been investigated by Atmospheric Chemical Vapour Deposition (APCVD). Experimental details of the deposition system and the techniques used to characterise the films are presented. Results from investigations into the deposition parameters, the film microstructure and film material properties are discussed. A range of precursors were investigated for the deposition of indium oxide. The effect of pro-mixing the vaporised precursor with an oxidant source and the deposition temperature has been studied. Polycrystalline In sub 2 O sub 3 films with a resistivity of 1.1 - 3x10 sup - sup 3 OMEGA cm were obtained with ln(thd) sub 3 , oxygen and nitrogen. The growth of ITO films from ln(thd) sub 3 , oxygen and a range of tin dopants is also presented. The effect of the dopant precursor, the doping concentration, deposition temperature and the effect of additives on film growth and microstr...

  11. Fundamental studies of chemical vapor deposition diamond growth processes

    International Nuclear Information System (INIS)

    We are developing laser spectroscopic techniques to foster a fundamental understanding of diamond film growth by hot filament chemical vapor deposition (CVD). Several spectroscopic techniques are under investigation to identify intermediate species present in the bulk reactor volume, the thin active volume immediately above the growing film, and the actual growing surface. Such a comprehensive examination of the overall deposition process is necessary because a combination of gas phase and surface chemistry is probably operating. Resonantly enhanced multiphoton ionization (REMPI) techniques have been emphasized. A growth rector that permits through-the-substrate gas sampling for REMPI/time-of-flight mass spectroscopy has been developed. 7 refs., 2 figs

  12. Combustion chemical vapor deposited coatings for thermal barrier coating systems

    Energy Technology Data Exchange (ETDEWEB)

    Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering

    1995-12-31

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

  13. The power source effect on SiOx coating deposition by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    SiOx coatings were prepared by capacitively coupled plasma enhanced chemical vapor deposition on polyethyleneterephtalate substrates in 23 kHz middle-frequency and radio frequency power supplies, respectively, where hexamethyldisiloxane was used as gas source. The influences of discharge conditions on gas phase intermediate species and active radicals for SiOx formation was investigated by mass spectrometry as real-time in-situ diagnosis. The deposited SiOx coating chemical structures were also analyzed by Fourier transform infrared spectroscopy. Meanwhile, the film barrier property, oxygen transmission rate, was measured at 23 oC and 50% humidity circumstance. The better barrier property was obtained in the MF power source depositing SiOx coated PET.

  14. Deposition of Lead Sulfide Nanostructure Films on TiO2 Surface via Different Chemical Methods due to Improving Dye-Sensitized Solar Cells Efficiency

    International Nuclear Information System (INIS)

    Graphical abstract: Display Omitted -- Highlights: • TiO2 surface was fabricated by electrophoresis deposition method. • PbS nanostructure layers were deposited on the TiO2 surface via different chemical methods. • The effects of chemical deposition methods on the optical properties of fabricated surfaces were studied. • Dye-sensitized solar cells (DSSCs) were made with the fabricated TiO2/PbS surfaces. • The effects of different deposition methods on DSSC performance were investigated. -- Abstract: In this work TiO2 P25 was deposited successfully on the FTO glass by electrophoresis method. Different chemical methods were served for deposition of nanosized PbS such as chemical bath deposition (CBD) and successive ion layer adsorption and reaction (SILAR). Also in this paper, nanosized lead sulfide was successfully deposited on TiO2 surface by hydrothermal (HT) and microwave (MW) methods. Also TiO2/PbS nanocomposite was synthesized via a simple hydrothermal method and deposited on FTO glass by doctor blade (DB) technique. Dye sensitized solar cells were fabricated from prepared electrodes, Pt as counter electrode, dye solution and electrolyte. The effect of chemical deposition methods were investigated on surface quality, optical properties and solar cell efficiency. The observation showed that using different chemical methods for deposition of PbS on TiO2 surface is led to fabrication solar cells with different efficiencies and performances. The electrodes were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), cross-section SEM, UV–vis diffuse reflectance spectroscopy (DRS), energy dispersive X-ray analysis (EDX) spectroscopy, atomic force microscopy (AFM), cyclic voltammetry (CV) and UV–Vis spectroscopy. Dye-sensitized solar cells (DSSC) made by the fabricated electrodes as working electrode and then were investigated by current density-voltage (J-V) curve and electrochemical

  15. The versatility of hot-filament activated chemical vapor deposition

    International Nuclear Information System (INIS)

    In the field of activated chemical vapor deposition (CVD) of polycrystalline diamond films, hot-filament activation (HF-CVD) is widely used for applications where large deposition areas are needed or three-dimensional substrates have to be coated. We have developed processes for the deposition of conductive, boron-doped diamond films as well as for tribological crystalline diamond coatings on deposition areas up to 50 cm x 100 cm. Such multi-filament processes are used to produce diamond electrodes for advanced electrochemical processes or large batches of diamond-coated tools and parts, respectively. These processes demonstrate the high degree of uniformity and reproducibility of hot-filament CVD. The usability of hot-filament CVD for diamond deposition on three-dimensional substrates is well known for CVD diamond shaft tools. We also develop interior diamond coatings for drawing dies, nozzles, and thread guides. Hot-filament CVD also enables the deposition of diamond film modifications with tailored properties. In order to adjust the surface topography to specific applications, we apply processes for smooth, fine-grained or textured diamond films for cutting tools and tribological applications. Rough diamond is employed for grinding applications. Multilayers of fine-grained and coarse-grained diamond have been developed, showing increased shock resistance due to reduced crack propagation. Hot-filament CVD is also used for in situ deposition of carbide coatings and diamond-carbide composites, and the deposition of non-diamond, silicon-based films. These coatings are suitable as diffusion barriers and are also applied for adhesion and stress engineering and for semiconductor applications, respectively

  16. Coating of metals with titanium diboride by chemical vapor deposition

    International Nuclear Information System (INIS)

    This study is an experimental investigation of the chemical vapor deposition of titanium diboride on metallic substrates by the hydrogen reduction of TiCl4 and BCl3 at temperatures between 8500C and 11000C. Kovar, tantalum, and several stainless steels were found to be suitable substrates since they could withstand the deposition temperature, had adequate resistance to HCl, a by-product of the deposition reaction, and had thermal expansion coefficients sufficiently close to that of TiB2 (less than or equal to10 x 10-6/0C). The TiB2 coatings produced were 68.2% Ti and thus near stoichiometry and had very low impurity content. They had Knoop hardnesses averaging 3300 kg/mm2 and exhibited extraordinary erosion resistance

  17. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    Institute of Scientific and Technical Information of China (English)

    SUN,Jie(孙捷); SUN,Ying-Chun(孙迎春)

    2004-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al2(SO4)3]=0.0837 mol·L-1, [NaHCO3]=0.214 mol·L-1, 15 ℃. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well, Excellent quality of A12O3 films in this work is supported by electron dispersion spectroscopy,Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

  18. Self-organization and nanostructure formation in chemical vapor deposition

    Science.gov (United States)

    Walgraef, Daniel

    2013-10-01

    When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monatomic layers, such models describe the evolution of atomic coverage due to the combined effect of reaction terms representing adsorption-desorption and chemical processes and nonlinear diffusion terms that are of the Cahn-Hilliard type. This combination may lead, below a critical temperature, to the instability of uniform deposited layers. This instability triggers the formation of nanostructures corresponding to regular spatial variations of substrate coverage. Patterns wavelengths and symmetries are selected by dynamical variables and not by variational arguments. According to the balance between reaction- and diffusion-induced nonlinearities, a succession of nanostructures including hexagonal arrays of dots, stripes, and localized structures of various types may be obtained. These structures may initiate different growth mechanisms, including Volmer-Weber and Frank-Van der Merwe types of growth. The relevance of this approach to the study of deposited layers of different species is discussed.

  19. Carbon nanostructures and networks produced by chemical vapor deposition

    OpenAIRE

    Kowlgi, N.K.K.; Koper, G.J.M.; Raalten, R.A.D.

    2012-01-01

    The invention pertains to a method for manufacturing crystalline carbon nanostructures and/or a network of crystalline carbon nanostructures, comprising: (i) providing a bicontinuous micro-emulsion containing metal nanoparticles having an average particle size between 1and 100nm; (ii) bringing said bicontinuous micro-emulsion into contact with a substrate; and (iii) subjecting said metal nanoparticles and a gaseous carbon source to chemical vapor deposition, thus forming carbon nanostructures...

  20. Chemical vapour deposition synthetic diamond: materials, technology and applications

    OpenAIRE

    Balmer, R. S.; Brandon, J R; Clewes, S L; Dhillon, H. K.; Dodson, J M; Friel, I.; Inglis, P. N.; Madgwick, T D; Markham, M. L.; Mollart, T P; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A J; Wilman, J J

    2009-01-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synt...

  1. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    OpenAIRE

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-01-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comp...

  2. Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride

    OpenAIRE

    Besling, W.; van der Put, P.; Schoonman, J.

    1995-01-01

    Laser-induced Chemical Vapour Deposition of silicon carbonitride coatings and powders has been investigated using hexamethyldisilazane (HMDS) and ammonia as reactants. An industrial CW CO2-laser in parallel configuration has been used to heat up the reactant gases. HMDS dissociates in the laser beam and reactive radicals are formed which increase rapidly in molecular weight by an addition mechanism. Dense polymer-like silicon carbonitride thin films and nanosized powders are formed depending ...

  3. High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases,the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good,and the underlying SiGe/Si heterointerface is sharply defined.

  4. Turkish Bath Museum and Henna Bath exhibition

    Directory of Open Access Journals (Sweden)

    Sema Demir

    2013-12-01

    Full Text Available Beypazarı henna baths (bridal baths of a tradition lost since the mid-Twentieth Century, are today a part of our cultural memory. A practice of a time when wedding ceremonies in Beypazarı lasted seven days, the henna bath culture has been made into a book, based on the reminiscences of locals, which has become a permanent exhibit of Turkey’s first-ever bath museum inaugurated in Beypazarı in 2012. This study takes up the Beypazarı henna baths as a brief evaluation of Jean Baudrillard’s thoughts on simulation, Anthony Giddens’ thoughts on modernism, and the theories of nostalgia put forward by Svetlana Boym.

  5. Morphological and chemical study of the initial growth of CdS thin films deposited using an ammonia-free chemical process

    Energy Technology Data Exchange (ETDEWEB)

    Mazon-Montijo, D.A.; Sotelo-Lerma, M.; Quevedo-Lopez, M. [Centro de Investigacion en Polimeros y Materiales, Universidad de Sonora, Apdo. Postal 130, 83190 Hermosillo, Son. (Mexico); El-Bouanani, M. [Department of Materials Science and Engineering, University of North Texas, P.O. Box 305310 Denton, TX 76203-5310 (United States); Alshareef, H.N. [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Espinoza-Beltran, F.J. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)], E-mail: rrbon@qro.cinvestav.mx

    2007-11-15

    We study the initial growth stages of CdS thin films deposited by an ammonia-free chemical bath deposition process. This ammonia-free process is more environmentally benign because it reduces potential ammonia release to the environment due to its high volatility. Instead of ammonia, sodium citrate was used as the complexing agent. We used atomic force microscopy (AFM), Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS) to investigate the morphological and chemical modifications at the substrate surface during the first initial stages of the CdS deposition process. Additionally, X-ray diffraction (XRD) and optical transmission spectroscopy measurements were carried out to compliment the study. XPS results show that the first nucleation centers are composed by Cd(OH){sub 2} which agglomerate in patterns of bands, as demonstrated by AFM results. It is also observed that the conversion to CdS (by anionic exchange) of the first nucleus begins before the substrate surface is completely covered by a homogenous film.

  6. Nickel electrodeposition from novel citrate bath

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new type of electroplating bath suitable for nickel electrodeposition was developed. Trisodium citrate was used as a complexing agent and a buffer in the bath. The buffering capacity between trisodium citrate and boric acid were compared. The effects were investigated under different conditions of bath composition, current density, pH and temperature on the potentiodynamic cathodic polarization curves, cathodic current efficiency and throwing index, as well as the electrical conductivity of these baths. The optimum conditions for producing sound and satisfactory nickel deposits were: NiSO4·6H2O 350 g/L, NiC12·6H2O 45 g/L and Na3C6H5O7 30 g/L at pH=4 and 55 ℃. The surface morphology of the as-plated Ni deposit was examined by SEM. The results reveal that the nickel deposition obtained from the optimum conditions are composed of compact, non-porous fine grains covering the entire surface. X-ray analysis shows that nickel deposits obtained from the citrate bath have a fine crystal structure compared with deposits from the Watts bath.

  7. Characterization of nanocarbon deposited on insulator substrate by alcohol chemical vapor deposition

    Science.gov (United States)

    Tsujimoto, Marina; Murata, Hidenobu; Tachibana, Masaru

    2016-10-01

    Single-layer-graphene-like nanocarbon materials were directly deposited on c-plane sapphire substrates by thermal chemical vapor deposition with ethanol as a carbon source. Scanning electron microscopy (SEM) images show that the deposited materials have sheetlike grains of around 100 nm diameter. Most of them have “hills” with 32 nm diameter on the grains. According to atomic force microscopy (AFM) observation, the height of the sheetlike grains is below 1 nm, which is comparable to that of single-layer graphene, while the hills have a height of several nm. Raman spectra show that the material is similar to graphitic nanocarbon, which has a strong D band. This result implies that there are a number of defects in the nanocarbon materials.

  8. Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition

    CERN Document Server

    Kang, S Y; Lee, S K; Hwang, C S; Kim, H J

    2000-01-01

    Ru thin films were deposited at 300 approx 400 .deg. C by using Ru(C sub 5 H sub 4 C sub 2 H sub 5) sub 2 (Ru(EtCp) sub 2) as a precursor and low-pressure metalorganic chemical vapor deposition. The addition of O sub 2 gas was essential to form Ru thin films. The deposition rates of the films were about 200 A/min. For low oxygen addition and high substrate temperature, RuO sub 2 phases were formed. Also, thermodynamic calculations showed that all the supplied oxygen was consumed to oxidize carbon and hydrogen, cracked from the precursor ligand, rather than Ru. Thus, metal films could be obtained There was an optimum oxygen to precursor ratio at which the pure Ru phase could be obtained with minimum generation of carbon and RuO sub 2

  9. Bath temperature impact on morphological evolution of Ni(OH)2 thin films and their supercapacitive behaviour

    Indian Academy of Sciences (India)

    U M Patil; K V Gurav; J H Kim; C D Lokhande; S C Jun

    2014-02-01

    Nanostructured Ni(OH)2 thin films were deposited over stainless steel (SS) and glass substrate via simple chemical bath deposition (CBD) method. NiCl2 :6H2O were used as source of nickel and aqueous ammonia as a complexing agent. The coating process of Ni(OH)2 material over substrate is based on the decomposition of ammonia complexed nickel ions at two different bath temperatures. The changes in structural, morphological and electro-chemical properties are examined as an impact of bath temperature. XRD studies reveal formation of mixed phase of and at lower bath temperature (313 K) while, pure phase of Ni(OH)2 thin films deposited was observed at higher bath temperature (353 K). The morphological evolution from honeycomb structure to vertically aligned flakes over the substrate is observed as the influence of bath temperature. The supercapacitive performance based on the morphology examined by using cyclic voltammetric measurements in 1 M KOH. The maximum specific capacitances of 610 and 460 F/g were observed for the vertical flake and honeycomb structured Ni(OH)2 thin films, respectively.

  10. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  11. Characterisation of TiO 2 deposited by photo-induced chemical vapour deposition

    Science.gov (United States)

    Kaliwoh, Never; Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We report the deposition of thin TiO 2 films on crystalline Si and quartz by photo-induced chemical vapour deposition (CVD) using UV excimer lamps employing a dielectric barrier discharge in krypton chloride (KrCl ∗) to provide intense narrow band radiation at λ=222 nm. The precursor used was titanium isopropoxide (TTIP). Films from around 20-510 nm in thickness with refractive indices from 2.20 to 2.54 were grown at temperatures between 50 and 350 °C. The higher refractive index values compare favourably with the value of 2.58 recorded for the bulk material. The measured deposition rate was around 50 nm/min at 350 °C. Fourier transform infrared spectroscopy (FTIR) revealed the presence of TiO 2 through the observation of a Ti-O absorption peak and the absence of OH in films deposited at 250-350 °C indicated relatively good quality films. The phase of films deposited at 200-350 °C was anatase as determined by X-ray diffraction.

  12. Synthesis of Aligned Carbon Nanotubes by Thermal Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Gang; ZHOU Ming; MA Weiwei; CAI Lan

    2009-01-01

    Single crystal silicon was found to be very beneficial to the growth of aligned carbon nanotubes by chemical vapor deposition with C2H2 as carbon source. A thin film of Ni served as catalyst was deposited on the Si substrate by the K575X Peltier Cooled High Resolution Sputter Coater before growth. The growth properties of carbon nanotubes were studied as a function of the Ni catalyst layer thickness. The diameter, growth rate and areal density of the carbon nanotubes were controlled by the initial thickness of the catalyst layer. Steric hindrance between nanotubes forces them to grow in well-aligned manner at an initial stage of growth. Transmission electron microscope analysis revealed that nanotubes grew by a tip growth mechanism.

  13. Coloration efficiency of chemically deposited electrochromic thin films

    International Nuclear Information System (INIS)

    Transparent nickel oxide and copper oxide thin films were produced by very simple and economic method of chemical deposition. Those films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates. Electrochromic test device (ECTD) was constructed by using these films as working electrodes, together with the FTO as a counter electrode in alkaline environment (0,1 M NaOH aqueous solution). All the obtained films exhibited electrochromic behavior. Nichel oxide films were transparent for visible light in the reduced state, and displayed a dark brown color in the oxidised state and displayed a very dark brown color in the reduced state. The coloration efficiency (CE) at wavelength λ=670 nm was estimated from the slope of the graphical presentation of the optical density as a function of the charge density, during the charge extraction (nickel oxide films) and charge insertion (copper oxide films). (Author)

  14. Electrospray deposition of isolated chemically synthesized magnetic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Agostini, Pierre; Meffre, Anca; Lacroix, Lise-Marie; Ugnati, Damien [Université de Toulouse (France); INSA, UPS, CNRS, Laboratoire de Physique et Chimie des Nano-objets (LPCNO) (France); Ondarçuhu, Thierry [Centre d’Elaboration de Matériaux et d’Etudes Structurales (CEMES-CNRS) (France); Respaud, Marc; Lassagne, Benjamin, E-mail: lassagne@insa-toulouse.fr [Université de Toulouse (France); INSA, UPS, CNRS, Laboratoire de Physique et Chimie des Nano-objets (LPCNO) (France)

    2016-01-15

    The deposition of isolated magnetic nanoparticles onto a substrate was performed using electrohydrodynamic spraying. Two kinds of nanoparticles were sprayed, 11 nm CoFe carbide nanospheres and 10.5 nm Fe nanocubes. By studying carefully the evolution of the sprayed charged droplets and the mechanism of nanoparticle dispersion in them, we could optimize the nanoparticle concentration within the initial nanoparticle solution (i) to reduce the magnetic interaction and therefore prevent agglomeration and (ii) to obtain in a relatively short period (1 h) a deposit of isolated magnetic nanoparticles with a density of up to 400 nanoparticles per µm{sup 2}. These results open great perspectives for magnetic measurements on single objects using advanced magnetometry techniques as long as spintronics applications based on single chemically synthesized magnetic nanoparticles.

  15. Chemical Vapour Deposition of Gas Sensitive Metal Oxides

    Directory of Open Access Journals (Sweden)

    Stella Vallejos

    2016-03-01

    Full Text Available This article presents a review of recent research efforts and developments for the fabrication of metal-oxide gas sensors using chemical vapour deposition (CVD, presenting its potential advantages as a materials synthesis technique for gas sensors along with a discussion of their sensing performance. Thin films typically have poorer gas sensing performance compared to traditional screen printed equivalents, attributed to reduced porosity, but the ability to integrate materials directly with the sensor platform provides important process benefits compared to competing synthetic techniques. We conclude that these advantages are likely to drive increased interest in the use of CVD for gas sensor materials over the next decade, whilst the ability to manipulate deposition conditions to alter microstructure can help mitigate the potentially reduced performance in thin films, hence the current prospects for use of CVD in this field look excellent.

  16. Synthesis of mullite coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  17. Handbook of chemical vapor deposition principles, technology and applications

    CERN Document Server

    Pierson, Hugh O

    1999-01-01

    Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

  18. Microwave transmission properties of chemical vapor deposition graphene

    Science.gov (United States)

    Wu, Yunqiu; Xu, Yuehang; Wang, Zegao; Xu, Cao; Tang, Zongxi; Chen, Yuanfu; Xu, Ruimin

    2012-07-01

    In this letter, the microwave transmission properties of graphene grown by the chemical vapor deposition are studied by using a multiple-layer coplanar-waveguide transmission-line based measurement method. Remarkable energy loss and phase shift have been observed in graphene from the measured scattering parameters through vector network analyzer. The effective permittivity is deduced by partial-capacitance technique, and the complex permittivity of graphene are extracted in the frequency range of 500 MHz to 6 GHz. Different from conventional dielectric material, the permittivity of graphene shows frequency-dependent below 4 GHz and has an magnitude larger than 104 for both real and imaginary parts.

  19. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    International Nuclear Information System (INIS)

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used

  20. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  1. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    Science.gov (United States)

    Bignardi, Luca; van Dorp, Willem F.; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-09-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer.

  2. Microscopic characterisation of suspended graphene grown by chemical vapour deposition.

    Science.gov (United States)

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; De Hosson, Jeff Th M; Stöhr, Meike; Rudolf, Petra

    2013-10-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer. PMID:23945527

  3. Ballistic transport in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene

  4. Bathing a patient in bed

    Science.gov (United States)

    Bed bath; Sponge bath ... Some patients cannot safely leave their beds to bathe. For these people, daily bed baths can help keep their skin healthy, control odor, and increase comfort. If moving the ...

  5. MANSION BATHS OF CYPRUS

    Directory of Open Access Journals (Sweden)

    Enes Kavalçalan

    2015-12-01

    Full Text Available From the very beginning of the human history, body cleanliness is one of the basic needs. At first, human beings have supplied the needs of cleaning from rivers and lakes. With the development of civilizations they have started to build baths. In Roman Period these baths have been combined with Gymnasiums and become a part of the social life while they were merely small places of bathing in Ancient Greek. In the course of time, bath architecture which gained new functions and typologies with the effects of different nations and geographic places has maintained its own existence in Turkish culture as a popular ingredient in it. In this paper, mansion baths that were built in Ottoman period in Cyprus are studied. Firstly all locations of baths were determinated, photographed and measured during the research. Then, the determinated baths have been tried to being described comprehensively in the light of the documents and knowledges that are achievable. Main plan in mansion baths was built on the basis of “dressing” and “hotness” sections. Also, there are installation parts like “water tank” and “boiler room”. The baths which have a peculiar schema in itself constitute the exceptional examples of bath typology. With this paper, introduction to science world of mansion baths which are generally ignored in most of the researches because of the small sizes, are aimed.

  6. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki

    use as a construction material for process equipment, with the cheaper alternative being the construction of equipment from steel and then protecting it with a thin but efficacious layer of tantalum. Chemical Vapour Deposition (CVD) is chosen as the most effective process to apply thin corrosion......Tantalum’s resistance to corrosion in hot acidic environments and its superior metallic properties have made it a prime solution as a construction material or protective coating to equipment intended for use in such harsh chemical and physical conditions. The high price of tantalum metal limits its...... protective layers of tantalum because of the process’ ability to coat complex geometries and its relative ease to control. This work focuses on studying the CVD of tantalum in long narrow channels with the view that the knowledge gained during the project can be used to optimise the commercial coating...

  7. Chemical vapor deposition of conformal, functional, and responsive polymer films.

    Science.gov (United States)

    Alf, Mahriah E; Asatekin, Ayse; Barr, Miles C; Baxamusa, Salmaan H; Chelawat, Hitesh; Ozaydin-Ince, Gozde; Petruczok, Christy D; Sreenivasan, Ramaswamy; Tenhaeff, Wyatt E; Trujillo, Nathan J; Vaddiraju, Sreeram; Xu, Jingjing; Gleason, Karen K

    2010-05-11

    Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed. PMID:20544886

  8. Neutron detectors made from chemically vapor deposited semiconductors

    International Nuclear Information System (INIS)

    In this paper, the authors present the results of investigations on the use of semiconductors deposited by chemical vapor deposition (CVD) for the fabrication of neutron detectors. For this purpose, 20 microm thick hydrogenated amorphous silicon (a-Si:H) pin diodes and 100 microm thick polycrystalline diamond resistive detectors were fabricated. The detectors were coupled to a neutron-charged particle converter: a layer of either gadolinium or boron (isotope 10 enriched) deposited by evaporation. They have demonstrated the capability of such neutron detectors to operate at neutron fluxes ranging from 101 to 106 neutrons/cm2.s. The fabrication of large area detectors for neutron counting or cartography through the use of multichannel reading circuits is discussed. The advantages of these detectors include the ability to produce large area detectors at low cost, radiation hardness (∼ 4 Mrad for a-Si:H and ∼ 100 Mrad for diamond), and for diamond, operation at temperatures up to 500 C. These properties enable the use of these devices for neutron detection in harsh environments. Thermal neutron detection efficiency up to 22% and 3% are expected by coupling a-Si:H diodes and diamond detectors to 3 microm thick gadolinium (isotope 157) and 2 microm thick boron layers, respectively

  9. Thin films of barium fluoride scintillator deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    We have used metal-organic chemical vapor deposition (MOCVD) technology to coat optical substrates with thin (≅ 1-10 μm thick) films of inorganic BaF2 scintillator. Scanning electron microscope (SEM) photographs indicate that high-quality epitaxial crystalline film growth was achieved, with surface defects typically smaller than optical wavelengths. The scintillation light created by the deposition of ionizing radiation in the scintillating films was measured with a photomultiplier and shown to be similar to bulk melt-grown crystals. The results demonstrate the potential of these composite optical materials for planar and fiber scintillation radiation detectors in high energy and nuclear physics, synchrotron radiation research, and in radiation and X-ray imaging and monitoring. (orig.)

  10. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  11. Finite size bath in qubit thermodynamics

    OpenAIRE

    Pekola, J. P.; Suomela, S.; Galperin, Y. M.

    2016-01-01

    We discuss a qubit weakly coupled to a finite-size heat bath (calorimeter) from the point of view of quantum thermodynamics. The energy deposited to this environment together with the state of the qubit provides a basis to analyze the heat and work statistics of this closed combined system. We present results on two representative models, where the bath is composed of two-level systems or harmonic oscillators, respectively. Finally, we derive results for an open quantum system composed of the...

  12. Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

    OpenAIRE

    Temple Boyer, Pierre; Jalabert, L.; Masarotto, L.; Alay, Josep Lluís; Morante i Lleonart, Joan Ramon

    2000-01-01

    Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane SiH4 and ammonia NH3 at high temperature (750°C) and the influences of the NH3/SiH4 gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene SiH2 into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich...

  13. Structural properties of zinc oxide deposited using atmospheric pressure combustion chemical vapour deposition

    International Nuclear Information System (INIS)

    In this study the deposition of thin zinc oxide (ZnO) films under atmospheric pressure conditions was investigated. The deposition technique applied was combustion chemical vapour deposition (CCVD), at which a propane–air mixture was combusted in a burner. Dissolved zinc nitrate was used as precursor, which was guided as aerosol droplets by the processing gas flow directly into the reaction zone. Fundamental investigations were performed to form undoped ZnO. The structural properties of the films were analysed in dependence of the substrate temperature during the coating process. The presence of crystalline ZnO structures was proved and differences in film growth and crystallite sizes are revealed. Additionally, the particles generated by the CCVD-flame are characterised. The thin films showed a slight excess of Zn and several states of binding energy could be observed by fitting the core level spectra. Scanning and transmission electron microscopy also indicated ordered structures and additionally different orientations of crystallites were observed. - Highlights: • Columnar growth structures of ZnO by CCVD were observed. • The presence of polycrystalline ZnO with (002) as main orientation was confirmed. • Initial particles significantly differ from crystallite sizes of the resulting films. • The films show an excess of Zn with a Zn-to-O ratio of around 1.7

  14. Structural properties of zinc oxide deposited using atmospheric pressure combustion chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zunke, I., E-mail: iz@innovent-jena.de [Innovent e.V. Technology Development, Department of Surface Engineering, Prüssingstr. 27B, 07745 Jena (Germany); Wolf, S. [University of Jena, Institute for Solid State Physics, Helmholtzweg 3/5, 07745 Jena (Germany); Heft, A.; Schimanski, A.; Grünler, B. [Innovent e.V. Technology Development, Department of Surface Engineering, Prüssingstr. 27B, 07745 Jena (Germany); Ronning, C.; Seidel, P. [University of Jena, Institute for Solid State Physics, Helmholtzweg 3/5, 07745 Jena (Germany)

    2014-08-28

    In this study the deposition of thin zinc oxide (ZnO) films under atmospheric pressure conditions was investigated. The deposition technique applied was combustion chemical vapour deposition (CCVD), at which a propane–air mixture was combusted in a burner. Dissolved zinc nitrate was used as precursor, which was guided as aerosol droplets by the processing gas flow directly into the reaction zone. Fundamental investigations were performed to form undoped ZnO. The structural properties of the films were analysed in dependence of the substrate temperature during the coating process. The presence of crystalline ZnO structures was proved and differences in film growth and crystallite sizes are revealed. Additionally, the particles generated by the CCVD-flame are characterised. The thin films showed a slight excess of Zn and several states of binding energy could be observed by fitting the core level spectra. Scanning and transmission electron microscopy also indicated ordered structures and additionally different orientations of crystallites were observed. - Highlights: • Columnar growth structures of ZnO by CCVD were observed. • The presence of polycrystalline ZnO with (002) as main orientation was confirmed. • Initial particles significantly differ from crystallite sizes of the resulting films. • The films show an excess of Zn with a Zn-to-O ratio of around 1.7.

  15. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers.

  16. Physical properties of chemically deposited Bi{sub 2}S{sub 3} thin films using two post-deposition treatments

    Energy Technology Data Exchange (ETDEWEB)

    Moreno-García, H., E-mail: hamog@ier.unam.mx [Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos (Mexico); Messina, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63155 Tepic, Nayarit (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Martínez, H. [Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos (Mexico)

    2014-08-30

    Highlights: • The post-deposition treatment by Ar plasma is a viable alternative to enhance the optical, electrical, morphological and structural properties of Bi{sub 2}S{sub 3} semiconductor thin films. • The plasma treatment avoids the loss in thickness of the chemically deposited Bi{sub 2}S{sub 3} thin films. • The E{sub g} values were 1.60 eV for the thermally annealed samples and 1.56 eV for the Ar plasma treated samples. • The highest value obtained for the electrical conductivity was 7.7 × 10{sup −2} (Ω cm){sup −1} in plasma treated samples. - Abstract: As-deposited bismuth sulfide (Bi{sub 2}S{sub 3}) thin films prepared by chemical bath deposition technique were treated with thermal annealed in air atmosphere and argon AC plasma. The as-deposited, thermally annealing and plasma treatment Bi{sub 2}S{sub 3} thin films have been characterized by X-ray diffraction (XRD) analysis, atomic force microscopy analysis (AFM), transmission, specular reflectance and electrical measurements. The structural, morphological, optical and electrical properties of the films are compared. The XRD analysis showed that both post-deposition treatments, transform the thin films from amorphous to a crystalline phase. The atomic force microscopy (AFM) measurement showed a reduction of roughness for the films treated in plasma. The energy band gap value of the as-prepared film was E{sub g} = 1.61 eV, while for the film thermally annealed was E{sub g} = 1.60 eV and E{sub g} = 1.56 eV for film treated with Plasma. The electrical conductivity under illumination of the as-prepared films was 3.6 × 10{sup −5} (Ω cm){sup −1}, whereas the conductivity value for the thermally annealed films was 2.0 × 10{sup −3} (Ω cm){sup −1} and for the plasma treated films the electrical conductivity increases up to 7.7 × 10{sup −2} (Ω cm){sup −1}.

  17. Strain relaxation in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

    2013-12-07

    The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

  18. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Shin Jinhong [Texas Materials Institute, University of Texas at Austin, Austin, TX 78750 (United States); Waheed, Abdul [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Winkenwerder, Wyatt A. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Kim, Hyun-Woo [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Agapiou, Kyriacos [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Jones, Richard A. [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Hwang, Gyeong S. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States)]. E-mail: ekerdt@che.utexas.edu

    2007-05-07

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO{sub 2} containing {approx} 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH{sub 2}(PMe{sub 3}){sub 4} (Me = CH{sub 3}) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

  19. Field emission properties of chemical vapor deposited individual graphene

    Energy Technology Data Exchange (ETDEWEB)

    Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

    2014-03-03

    Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10 nA current were found to be 515, 610, and 870 V/μm for vacuum gap of 400, 300, and 200 nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

  20. Chemical vapour deposition synthetic diamond: materials, technology and applications

    Science.gov (United States)

    Balmer, R. S.; Brandon, J. R.; Clewes, S. L.; Dhillon, H. K.; Dodson, J. M.; Friel, I.; Inglis, P. N.; Madgwick, T. D.; Markham, M. L.; Mollart, T. P.; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A. J.; Wilman, J. J.; Woollard, S. M.

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

  1. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  2. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  3. Advanced titania buffer layer architectures prepared by chemical solution deposition

    Science.gov (United States)

    Kunert, J.; Bäcker, M.; Brunkahl, O.; Wesolowski, D.; Edney, C.; Clem, P.; Thomas, N.; Liersch, A.

    2011-08-01

    Chemical solution deposition (CSD) was used to grow high-quality (100) oriented films of SrTiO3 (STO) on CSD CaTiO3 (CTO), Ba0.1Ca0.9TiO3 (BCT) and STO seed and template layers. These template films bridge the lattice misfit between STO and the nickel-tungsten (NiW) substrate, assisting in dense growth of textured STO. Additional niobium (Nb) doping of the STO buffer layer reduces oxygen diffusion which is necessary to avoid undesired oxidation of the NiW. The investigated templates offer suitable alternatives to established standard buffer systems like La2Zr2O7 (LZO) and CeO2 for coated conductors.

  4. Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Scholtes, T.L.M.; Nanver, L.K.

    2012-01-01

    The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and

  5. An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Nanver, L.K.

    2012-01-01

    In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon waf

  6. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  7. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    Science.gov (United States)

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  8. Chemical vapor deposition coatings for oxidation protection of titanium alloys

    Science.gov (United States)

    Cunnington, G. R.; Robinson, J. C.; Clark, R. K.

    1991-01-01

    Results of an experimental investigation of the oxidation protection afforded to Ti-14Al-21Nb and Ti-14Al-23Nb-2V titanium aluminides and Ti-17Mo-3Al-3Nb titanium alloy by aluminum-boron-silicon and boron-silicon coatings are presented. These coatings are applied by a combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. The former is for the application of aluminum, and the latter is for codeposition of boron and silicon. Coating thickness is in the range of 2 to 7 microns, and coating weights are 0.6 to 2.0 mg/sq cm. Oxidation testing was performed in air at temperatures to 1255 K in both static and hypersonic flow environments. The degree of oxidation protection provided by the coatings is determined from weight change measurements made during the testing and post test compositional analyses. Temperature-dependent total normal emittance data are also presented for four coating/substrate combinations. Both types of coatings provided excellent oxidation protection for the exposure conditions of this investigation. Total normal emittances were greater than 0.80 in all cases.

  9. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    Science.gov (United States)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  10. Laser diagnostics of chemical vapour deposition of diamond films

    CERN Document Server

    Wills, J B

    2002-01-01

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH sub 4 / H sub 2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH sub 3 , NH and C sub 2 H sub 2 in a hot filament (HF) activated gas mixture and CH, C sub 2 and C sub 2 H sub 2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH sub 3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O sub 2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (approx 10 sup 1 sup 3 molecules / cm...

  11. Vertically aligned peptide nanostructures using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Vasudev, Milana C; Koerner, Hilmar; Singh, Kristi M; Partlow, Benjamin P; Kaplan, David L; Gazit, Ehud; Bunning, Timothy J; Naik, Rajesh R

    2014-02-10

    In this study, we utilize plasma-enhanced chemical vapor deposition (PECVD) for the deposition of nanostructures composed of diphenylalanine. PECVD is a solvent-free approach and allows sublimation of the peptide to form dense, uniform arrays of peptide nanostructures on a variety of substrates. The PECVD deposited d-diphenylalanine nanostructures have a range of chemical and physical properties depending on the specific discharge parameters used during the deposition process. PMID:24400716

  12. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  13. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  14. Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

  15. Thermogravimetric analysis of cobalt-filled carbon nanotubes deposited by chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh, Babu P. [Materials Ireland Polymer Research Centre, Trinity College, Dublin-1 (Ireland); Blau, W.J. [Materials Ireland Polymer Research Centre, Trinity College, Dublin-1 (Ireland); Tyagi, P.K. [Department of Physics, Indian Institute of Technology, Bombay (India); Misra, D.S. [Department of Physics, Indian Institute of Technology, Bombay (India); Ali, N. [Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Gracio, J. [Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Cabral, G. [Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Titus, E. [Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal)]. E-mail: elby@mec.ua.pt

    2006-01-03

    In this paper, we report results from an investigation studying the purification of Co-filled carbon nanotubes (CNTs) using Thermogravimetric analysis (TGA). The as-grown CNTs were prepared using Microwave Plasma Chemical Vapour Deposition (MPCVD). Transmission electron microscopy (TEM), Fourier Transform Infrared (FTIR) and Raman spectroscopy were used to characterise the CNT samples. The CNTs produced by MPCVD were filled with cobalt and consisted of thick multi-walls. After TGA purification at 900 deg. C, 30 wt.% Co-filled CNTs remained in the TGA pan. However, while investigating the un-filled commercial CNTs (thin multiwalled), the sample completely burnt out at around 650 deg. C in the TGA furnace. The high thermal stability and the ability of thick-walled CNTs to act as an effective protective shield which prevents the oxidation of encapsulated cobalt have been demonstrated.

  16. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  17. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  18. Grain boundaries in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    The scientific literature on grain boundaries (GBs) in graphene was reviewed. The review focuses mainly on the experimental findings on graphene grown by chemical vapor deposition (CVD) under a very wide range of experimental conditions (temperature, pressure hydrogen/hydrocarbon ratio, gas flow velocity and substrates). Differences were found in the GBs depending on the origin of graphene: in micro-mechanically cleaved graphene (produced using graphite originating from high-temperature, high-pressure synthesis), rows of non-hexagonal rings separating two perfect graphene crystallites are found more frequently, while in graphene produced by CVD—despite the very wide range of growth conditions used in different laboratories—GBs with more pronounced disorder are more frequent. In connection with the observed disorder, the stability of two-dimensional amorphous carbon is discussed and the growth conditions that may impact on the structure of the GBs are reviewed. The most frequently used methods for the atomic scale characterization of the GB structures, their possibilities and limitations and the alterations of the GBs in CVD graphene during the investigation (e.g. under e-beam irradiation) are discussed. The effects of GB disorder on electric and thermal transport are reviewed and the relatively scarce data available on the chemical properties of the GBs are summarized. GBs are complex enough nanoobjects so that it may be unlikely that two experimentally produced GBs of several microns in length could be completely identical in all of their atomic scale details. Despite this, certain generalized conclusions may be formulated, which may be helpful for experimentalists in interpreting the results and in planning new experiments, leading to a more systematic picture of GBs in CVD graphene. (paper)

  19. Growth of graphene underlayers by chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Mopeli Fabiane

    2013-11-01

    Full Text Available We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD. Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT to yield poly (methyl methacrylate (PMMA/graphene/glass or (2 inverted transfer (IT to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM and atomic force microscopy (AFM were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  20. Development of microforming process combined with selective chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Koshimizu Kazushi

    2015-01-01

    Full Text Available Microforming has been received much attention in the recent decades due to the wide use of microparts in electronics and medical purpose. For the further functionalization of these micro devices, high functional surface with noble metals and nanomaterials are strongly required in bio- and medical fields, such as bio-sensors. To realize the efficient manufacturing process, which can deform the submillimeter scale bulk structure and can construct the micro to nanometer scale structures in one process, the present study proposes a combined process of microforming for metal foils with a selective chemical vapor deposition (SCVD on the active surface of work materials. To clarify the availability of this proposed process, the feasibility of SCVD of functional materials to active surface of titanium (Ti was investigated. CVD of iron (Fe and carbon nanotubes (CNTs which construct CNTs on the patterned surface of active Ti and non-active oxidation layer were conducted. Ti thin films on silicon substrate and Fe were used as work materials and functional materials, respectively. CNTs were grown on only Ti surface. Consequently, the selectivity of the active surface of Ti to the synthesis of Fe particles in CVD process was confirmed.

  1. Growth of graphene underlayers by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  2. Structure of chemical vapor deposition titania/silica gel

    Energy Technology Data Exchange (ETDEWEB)

    Leboda, R.; Gun' ko, V.M.; Marciniak, M.; Malygin, A.A.; Malkin, A.A.; Grzegorczyk, W.; Trznadel, B.J.; Pakhlov, E.M.; Voronin, E.F.

    1999-10-01

    The structure of porous silica gel/titania synthesized using chemical vapor deposition (CVD) of titania via repeated reactions of TiCl{sub 4} with the surface and subsequent hydrolysis of residual Ti-Cl bonds at different temperatures was investigated by means of low-temperature nitrogen adsorption-desorption, X-ray diffraction (XRD), IR spectroscopy, and theoretical methods. A globular model of porous solids with corpuscular structure was applied to estimate the porosity parameters of titania/silica gel adsorbents. The utilization of this model is useful, for example, to predict conditions for synthesis of titania/silica with a specified structure. Analysis of pore parameters and fractal dimension suggests that the porosity and fractality of samples decrease with increasing amount of TiO{sub 2} covering the silica gel surface in a nonuniform layer, which represents small particles embedded in pores and larger particles formed at the outer surface of silica globules. Theoretical simulation shows that the Si-O-Ti linkages between the cover and the substrate can be easily hydrolyzed, which is in agreement with the IR data corresponding to the absence of a band at 950 cm {sup {minus}1} (characteristic of Si-O-Ti bridges) independent of the concentration of CVD-titania.

  3. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity.

    Science.gov (United States)

    Bérard, Ariane; Patience, Gregory S; Chouinard, Gérald; Tavares, Jason R

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  4. Characterization of Defects in Chemical Vapour Deposited Diamonds

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ming-Long; XIA Yi-Ben; WANG Lin-Jun; GU Bei-Bei

    2005-01-01

    @@ Room-temperature Raman and PL spectra, photocurrent (PC) and thermally stimulated current (TSC) were measured to investigate the mid-gap defects in diamonds grown by using a hot-filament chemical vapour deposition (CVD) technique. The [Si-V]0 centres caused by the Si-C bonds in diamond grains and at grain boundaries are located at 1.68eV. We firstly detect the level 1.55eV by using PL and it is tentatively attributed to the zero-phonon luminescence line or vibronic band of the [Si-V]0 induced by the Si-O bonds. The 2.7-3.2eV and 1.9-2.1 eV PC peaks were detected and discussed. The [N-V] complex may be attributed to these defect levels.Some shallow energy levels lower than 1.0eV were also observed in the CVD diamond.

  5. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity

    Science.gov (United States)

    Bérard, Ariane; Patience, Gregory S.; Chouinard, Gérald; Tavares, Jason R.

    2016-08-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle.

  6. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  7. Charged impurity-induced scatterings in chemical vapor deposited graphene

    Science.gov (United States)

    Li, Ming-Yang; Tang, Chiu-Chun; Ling, D. C.; Li, L. J.; Chi, C. C.; Chen, Jeng-Chung

    2013-12-01

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  8. Effect of tri-sodium citrate concentration on structural, optical and electrical properties of chemically deposited tin sulfide films

    Science.gov (United States)

    Gode, F.; Guneri, E.; Baglayan, O.

    2014-11-01

    Tin sulfide thin films were deposited onto glass substrates by chemical bath deposition. The effects of molar concentration of the complexing agent, tri-sodium citrate, on the structural, morphological, optical and electrical properties of the films were investigated. The films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and Hall effect measurements. Polycrystalline film structure in orthorhombic phase was determined. Flower-like spherical grains are observed on the surface. While their average size increased from 345 nm to 750 nm when the tri-sodium citrate concentration was increased from 6.4 × 10-3 M to 8.0 × 10-3 M, the surface roughness varied in an opposite manner from approximately 120.18 nm to 29.36 nm. For these concentrations, optical band gap of the films decreased from 1.40 eV to 1.17 eV, whereas the Hall conductivity, mobility and carrier concentration of the films increased slightly from 5.91 × 10-5 to 8.78 × 10-5 (Ω cm)-1, from 148 to 228 cm2 V-1 s-1 and from 1.73 × 1012 to 3.59 × 1012 cm-1, respectively.

  9. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  10. Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

    NARCIS (Netherlands)

    Aresta, G.; Palmans, J.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Organosilicon layers have been deposited from 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3) by means of the initiated-chemical vapor deposition (i-CVD) technique in a deposition setup, ad hoc designed for the engineering of multilayer moisture permeation barriers. The application of Fourier

  11. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying substrat

  12. What Are Bath Salts?

    Science.gov (United States)

    ... Blog Team Concert festivals are all about good music, good friends, and big crowds. But for some ... school, North Carolina: Are bath salts becoming more popular? Marsha Lopez Hi, Lauren. Nope! Actually quite the ...

  13. Corrosion deposits removal from Kozloduy NPP VVER-440 steam generator tubing by chemical cleaning

    International Nuclear Information System (INIS)

    A strict control of primary and secondary circuits metal equipment corrosion of VVER-440 Kozloduy NPP units has been performed for the whole period of operation. This is carried out following a specific program including visual inspection and chemical analysis of equipment corrosion deposits. During their migration, the corrosion products deposit on the metal surface in the so-called standstill zones. One of these is the steam generator. The process results in: deterioration of thermal exchange; deterioration of corrosion conditions under deposits corrosion, pitting corrosion, etc. Using quantity deposits data and deposits chemical consistence, chemical cleaning of steam generator surfaces is performed. Decision for such chemical treatment of secondary circuit equipment is taken when the amount of deposits on the steam generator tubing is greater than 150 g/m2. This limit is based on operational experience and manufacturer requirements. (R.P.)

  14. ANOMALOUS ELECTRODEPOSITION OF Fe-Ni ALLOY COATING FROM SIMPLE AND COMPLEX BATHS AND ITS MAGNETIC PROPERTY

    Directory of Open Access Journals (Sweden)

    M A Islam

    2010-03-01

    Full Text Available Electrodeposition of Fe-Ni thin films has been carried on copper substrate under various electrodeposition conditions from two simple and six complex baths. Sulfate baths composing of NiSO4. 7H2O, FeSO4.7H2O, H3BO3 and Na2SO4KEYWORDS: Anomalous Electrodeposition, Fe-Ni Coating, Complexing agent, Current Density, Magnetic Property. 1. INTRODUCTION Alloy electrodeposition technologies can extend tremendously the potential of electrochemical deposition processes to provide coatings that require unique mechanical, chemical and physical properties [1]. There has been a great research interest in the development and characterization of iron-nickel (Fe-Ni thin films due to their operational capacity, economic interest, magnetic and other properties [2]. Due to their unique low coefficient of thermal expansion (CTE and soft magnetic properties, Fe-Ni alloys have been used in industrial applications for over 100 years [3]. Typical examples of applications that are based on the low CTE of Fe-Ni alloys include: thermostatic bimetals, glass sealing, integrated circuit packaging, cathode ray tube, shadow masks, membranes for liquid natural gas tankers; applications based on the soft magnetic properties include: read-write heads for magnetic storage, magnetic actuators, magnetic shielding, high performance transformer cores. comprise the simple baths whereas complex baths were prepared by adding ascorbic acid, saccharin and citric acid in simple baths. The effect of bath composition, pH and applied current density on coating appearance, composition, morphology and magnetic property were studied. Wet chemical analysis technique was used to analyze the coating composition whereas SEM and VSM were used to study the deposit morphology and magnetic property respectively. Addition of complexing agents in plating baths suppressed the anomalous nature of Fe-Ni alloy electrodeposition. Coatings obtained from simple baths were characterized by coarse grained non

  15. Electrical and magnetoresistivity studies in chemical solution deposited La

    Energy Technology Data Exchange (ETDEWEB)

    Angappane, S.; Murugaraj, P.; Sethupathi, K.; Rangarajan, G.; Sastry, V. S.; Chakkaravarthi, A. Arul; Ramasamy, P.

    2001-06-01

    High quality magnetoresistive La{sub (1{minus}x)}Ca{sub x}MnO{sub 3} thin films have been prepared by the chemical solution deposition technique. A solution of propionate precursors of lanthanum, calcium, and manganese in propionic acid was used for this purpose. Films of varying compositions (x varying from 0.1 to 0.4) were spin coated on to LaAlO{sub 3}(100) and SrTiO{sub 3}(100) substrates at room temperature and pyrolyzed in the temperature range 600{endash}850{degree}C. For fixed compositions, annealing at higher temperatures shifts the insulator{endash}metal transition temperature (T{sub I{endash}M}) to higher values accompanied by a reduction in the resistivity values. The T{sub I{endash}M} variation for different x values was found to be less pronounced in the compositions x=0.2, 0.3, and 0.4. Typical T{sub I{endash}M} values of 283 K and 290 K were obtained for La{sub 0.7}Ca{sub 0.3}MnO{sub 3} coated on LaAlO{sub 3} and SrTiO{sub 3} substrates, respectively, when annealed at 850{degree}C. The substrate effect was found to be more pronounced for the x value 0.1 which showed two peaks (one at 271 K and another at 122 K) in the {rho}-T curve. The roles of substrate mismatch, composition variation, and annealing temperatures are discussed. {copyright} 2001 American Institute of Physics.

  16. Review of chemical vapor deposition of graphene and related applications.

    Science.gov (United States)

    Zhang, Yi; Zhang, Luyao; Zhou, Chongwu

    2013-10-15

    Since its debut in 2004, graphene has attracted enormous interest because of its unique properties. Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications since the method was first reported in 2008/2009. In this Account, we review graphene CVD on various metal substrates with an emphasis on Ni and Cu. In addition, we discuss important and representative applications of graphene formed by CVD, including as flexible transparent conductors for organic photovoltaic cells and in field effect transistors. Growth on polycrystalline Ni films leads to both monolayer and few-layer graphene with multiple layers because of the grain boundaries on Ni films. We can greatly increase the percentage of monolayer graphene by using single-crystalline Ni(111) substrates, which have smooth surface and no grain boundaries. Due to the extremely low solubility of carbon in Cu, Cu has emerged as an even better catalyst for the growth of monolayer graphene with a high percentage of single layers. The growth of graphene on Cu is a surface reaction. As a result, only one layer of graphene can form on a Cu surface, in contrast with Ni, where more than one layer can form through carbon segregation and precipitation. We also describe a method for transferring graphene sheets from the metal using polymethyl methacrylate (PMMA). CVD graphene has electronic properties that are potentially valuable in a number of applications. For example, few-layer graphene grown on Ni can function as flexible transparent conductive electrodes for organic photovoltaic cells. In addition, because we can synthesize large-grain graphene on Cu foil, such large-grain graphene has electronic properties suitable for use in field effect transistors. PMID:23480816

  17. Molecular designing of precursors for chemical vapor deposition

    International Nuclear Information System (INIS)

    Both tin oxide and antimony oxide, can act as gas sensing material whose activity/selectivity is enhanced by the incorporation of a second metal. We are interested in the formation of bimetallic and trimetallic carboxylates and alkoxides which can be used as single source precursors for such mixed metal oxides. Sb(dmae)/sub 3/ (dmae=OCH/sub 2/CH/sub 2/(CH/sub 3/)sub 2/ has been prepared from Sb(OC/sub 2/H/sub 5/)/sub 3/ and Hdmae and used to generate the bimetallic materials Sb(dmae)/sub 3/Cd(acac)/sub 2/. Sn(acac)/sub 2/ hydrolyses to yield crystalline cage Sn/sub 4/O/sub 6/(dmae)/sub 4/. Sn(dmae)/sub 2/ can also be used to generate bimetallic materials such as [Sn(dmae)/sub 2/ Cd(acac)/sub 2/]/sub 2/]. Bimetallic and trimetallic carboxylates of general formula [R/sub 3/Ge-CHRCH/sub 2/COO]/sub 4-n/SnRn. [Where R=CH/sub 3/, C/sub 2/H/sub 5/, C/sub 6/H/sub 5/, tolyl, cyclohexyl, (CH/sub 3/)/sub 3/ Si CH/sub 2/-etc.] have been prepared and characterized by various analytic techniques. Chemical vapor deposition using Sb(dmae)/sub 3/ Cd(acac)/sub 2/ and various bimetallic carboxylates yield thin films of Cd/sub 2/Sb/sub 2/O/sub 7/ and SnOGeO respectively. (author)

  18. Polyimide (PI) films by chemical vapor deposition (CVD): Novel design, experiments and characterization

    OpenAIRE

    Puig-Pey González, Jaime; Lamure, Alain; Senocq, François

    2007-01-01

    International audience Polyimide (PI) has been deposited by chemical vapor deposition (CVD) under vacuum over the past 20 years. In the early nineties, studies, experiences and characterization were mostly studied as depositions from the co-evaporation of the dianhydride and diamine monomers. Later on, several studies about its different applications due to its interesting mechanical and electrical properties enhanced its development. Nowadays, not many researches around PI deposition are ...

  19. Pulling bubbles from a bath

    Science.gov (United States)

    Kao, Justin C. T.; Blakemore, Andrea L.; Hosoi, A. E.

    2010-06-01

    Deposition of bubbles on a wall withdrawn from a liquid bath is a phenomenon observed in many everyday situations—the foam lacing left behind in an emptied glass of beer, for instance. It is also of importance to the many industrial processes where uniformity of coating is desirable. We report work on an idealized version of this situation, the drag-out of a single bubble in Landau-Levich-Derjaguin flow. We find that a well-defined critical wall speed exists, separating the two regimes of bubble persistence at the meniscus and bubble deposition on the moving wall. Experiments show that this transition occurs at Ca∗˜Bo0.73. A similar result is obtained theoretically by balancing viscous stresses and gravity.

  20. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO2 based thin film catalysts is discussed.

  1. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  2. Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    Science.gov (United States)

    Sheikholeslami, M. Z.; Jasinski, T.; Fretz, K. W.

    1988-01-01

    In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.

  3. Water Evaporation in Swimming Baths

    DEFF Research Database (Denmark)

    Hyldgård, Carl-Erik

    This paper is publishing measuring results from models and full-scale baths of the evaporation in swimming baths, both public baths and retraining baths. Moreover, the heat balance of the basin water is measured. In addition the full-scale measurements have given many experiences which are repres......This paper is publishing measuring results from models and full-scale baths of the evaporation in swimming baths, both public baths and retraining baths. Moreover, the heat balance of the basin water is measured. In addition the full-scale measurements have given many experiences which...... are represented in instructions for carrying out and running swimming baths. If you follow the instructions you can achieve less investments, less heat consumption and a better comfort to the bathers....

  4. The power source effect on SiO{sub x} coating deposition by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Junfeng [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China); Chen Qiang, E-mail: chenqiang@bigc.edu.c [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China); Zhang Yuefei; Liu Fuping; Liu Zhongwei [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China)

    2009-05-29

    SiOx coatings were prepared by capacitively coupled plasma enhanced chemical vapor deposition on polyethyleneterephtalate substrates in 23 kHz middle-frequency and radio frequency power supplies, respectively, where hexamethyldisiloxane was used as gas source. The influences of discharge conditions on gas phase intermediate species and active radicals for SiOx formation was investigated by mass spectrometry as real-time in-situ diagnosis. The deposited SiOx coating chemical structures were also analyzed by Fourier transform infrared spectroscopy. Meanwhile, the film barrier property, oxygen transmission rate, was measured at 23 {sup o}C and 50% humidity circumstance. The better barrier property was obtained in the MF power source depositing SiOx coated PET.

  5. Fabrication of Isotropic Pyrocarbon at 1400℃ by Thermal Gradient Chemical Vapor Deposition Apparatus

    Institute of Scientific and Technical Information of China (English)

    GUO Lingjun; ZHANG Dongsheng; LI Kezhi; LI Hejun

    2009-01-01

    An experiment was designed to prepare isotropic pyrocarbon by thermal gradient chemical vapor deposition apparatus.The deposition was performed under ambient atmosphere at 1400℃,with natural gas volume flow of 3.5 m~3/h for 80 h.The results show that the thickness and the bulk density of the deposit are about 1.95 g/cm~3 and 10 mm,respectively.The microstructure of the deposit was examined by polarized light microscopy and scanning electron microscopy,which shows that the deposit is constituted of sphere isotropic pyrocarbon,pebble pyrocarbon and laminar pyrocarbon.

  6. Structural and optical properties of chemically deposited Cd(S–Se) : CdCl2, Sm films

    Indian Academy of Sciences (India)

    R S Singh; S Bhushan

    2009-04-01

    Results of SEM and XRD studies, optical absorption and photoluminescence (PL) emission spectra and photoconductivity (PC), rise and decay studies are reported for Cd(S–Se) : CdCl2, Sm films prepared by chemical deposition method on glass substrates at 60°C in a water bath. SEM studies show ball-type structures along with voids which are related to layered growth. XRD studies show prominent diffraction lines of CdS and CdSe along with some peaks of CdCl2 and impurity Sm. The values of strain (), grain size () and dislocation density () are evaluated from XRD studies and the nature of crystallinity of the films are discussed. Optical absorption spectra also show the presence of Sm in the lattice. From the results of optical absorption spectra, the band gaps are determined. PL emission spectra of Cd(S–Se) consist of two peaks which are related to the edge emission of CdS and CdSe involving excitons. In Sm-doped emissions corresponding to transitions ${}^{4}G_{5/2}$ to ${}^{6}H_{5/2}$, ${}^{6}H_{7/2}$ and ${}^{6}H_{9/2}$ are observed. Sufficiently high photo current (pc) to dark current (dc) ratios with a maximum value of the order of 106 are also obtained in some special cases. This high photosensitization is related to increase in mobility and life time of carriers due to photo excitation.

  7. Effect of annealing temperature on the crystalline quality and phase transformation of chemically deposited CdSe films

    International Nuclear Information System (INIS)

    Polycrystalline CdSe thin films were grown on glass substrates by chemical bath deposition at 50 C. The samples were annealed in air atmosphere at different temperatures and characterized by X-ray diffraction and Raman spectroscopy. It was found that the as-grown films have cubic structure. These samples maintain their cubic structure for annealing temperatures between 60 C and 300 C. For annealing temperatures higher than 300 C we obtain a mixture of cubic and hexagonal phases. The analysis made by X-ray diffraction and Raman dispersion show that the samples annealed at temperatures under the phase-transition temperature increase their crystalline quality. In order to determinate the temperature for the complete transition of the cubic phase, we used the precipitated material obtained during the grown of the CdSe films. This material was annealed on air atmosphere between 300 C and 500 C with 50 intervals. The samples were measured by X-ray diffraction. The samples maintained the cubic structure if the annealing temperature is under 300 C. For temperatures between 300 C and 450 C we found a mixture of cubic and hexagonal phase. For an annealing temperature of 500 C we obtain only the hexagonal phase. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Low pressure chemical vapor deposition of niobium coating on silicon carbide

    International Nuclear Information System (INIS)

    Nb coatings were prepared on a SiC substrate by low pressure chemical vapor deposition using NbCl5. Thermodynamic calculations were performed to study the effect of temperature and partial pressure of NbCl5 on the final products. The as-deposited coatings were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy. The Nb coatings are oriented and grow in the preferred (2 0 0) plane and (2 1 1) plane, at 1173 K and 1223-1423 K, respectively. At 1123-1273 K, the deposition is controlled by the surface kinetic processes. The activation energy is found to be 133 kJ/mol. At 1273-1373 K, the deposition is controlled by the mass transport processes. The activation energy is found to be 46 kJ/mol. The growth mechanism of the chemical vapor deposited Nb is also discussed based on the morphologies and the deposition rates.

  9. Experimental study on the formation and growth of electroless nickel-boron coatings from borohydride-reduced bath on mild steel

    Energy Technology Data Exchange (ETDEWEB)

    Vitry, Veronique, E-mail: veronique.vitry@umons.ac.be [Service de Metallurgie, Universite de Mons, Rue de l' Epargne 56, 7000 Mons (Belgium); Sens, Adeline [Service de Metallurgie, Universite de Mons, Rue de l' Epargne 56, 7000 Mons (Belgium); Kanta, Abdoul-Fatah [Service de Sciences des Materiaux, Universite de Mons, Rue de l' Epargne 56, 7000 Mons (Belgium); Delaunois, Fabienne [Service de Metallurgie, Universite de Mons, Rue de l' Epargne 56, 7000 Mons (Belgium)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Initiation mechanism of electroless Ni-B on St-37 steel has been identified. Black-Right-Pointing-Pointer Different phases of the plating process were observed and identified. Black-Right-Pointing-Pointer Influence of chemical heterogeneity on coating morphology was revealed. Black-Right-Pointing-Pointer Batch replenishment of the plating bath induces new germination phase. - Abstract: Quality and homogeneity of electroless nickel-boron coatings are very important for applications in corrosion and electronics and are completely dependent on the formation of the deposit. The growth and formation process of electroless nickel-boron was investigated by immersing mild steel (St-37) samples in an un-replenished bath for various periods of time (from 5 s to 1 h). The coatings obtained at the different stages of the process were then characterized: thickness was measured by SEM, morphology was observed, weight gain was recorded and top composition of the coatings was obtained from XPS. Three main phases were identified during the coating formation and links between plating time, instantaneous deposition rate, chemistry of last formed deposit and morphology were established. The mechanism for initial deposition on steel substrate for borohydride-reduced electroless nickel bath was also observed. Those results were confronted with chemistry evolution in the unreplenished plating bath during the process. This allowed getting insight about phenomena occurring in the plating bath and their influence on coating formation.

  10. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    Science.gov (United States)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  11. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  12. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  13. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    International Nuclear Information System (INIS)

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/min were obtained. The reaction kinetics were studied and detailed process modeling based on a reaction mechanism that includes the formation of an alkylzinc alkoxide intermediate product is discussed. This mechanism can explain the temperature dependent variety in deposition profiles observed in the static deposition experiments. The capability of modeling to gain insight in the local process conditions inside a reactor is demonstrated. - Highlights: • ZnO deposition at high rates of 800 nm/min • Modeling based on two step mechanism gives good fit. • Modeling gives insight in the inside of the reactor. • Modeling can even predict static deposition profiles

  14. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  15. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor depositionDeposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  16. Effect of tri-sodium citrate concentration on structural, optical and electrical properties of chemically deposited tin sulfide films

    Energy Technology Data Exchange (ETDEWEB)

    Gode, F., E-mail: ftmgode@gmail.com [Department of Physics, Mehmet Akif Ersoy University, 15030 Burdur (Turkey); Guneri, E. [Department of Primary Education, Erciyes University, 38039 Kayseri (Turkey); Baglayan, O. [Department of Physics, Anadolu University, 26470 Eskisehir (Turkey)

    2014-11-01

    Graphical abstract: - Highlights: • SnS thin films grown by CBD in different concentration of tri-sodium citrate. • Grain size increases, while surface roughness decreases, with concentration. • Optical band gap decreases from 1.40 eV to 1.17 eV with increasing concentration. • Electrical conductivity improves with increasing concentration. - Abstract: Tin sulfide thin films were deposited onto glass substrates by chemical bath deposition. The effects of molar concentration of the complexing agent, tri-sodium citrate, on the structural, morphological, optical and electrical properties of the films were investigated. The films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and Hall effect measurements. Polycrystalline film structure in orthorhombic phase was determined. Flower-like spherical grains are observed on the surface. While their average size increased from 345 nm to 750 nm when the tri-sodium citrate concentration was increased from 6.4 × 10{sup −3} M to 8.0 × 10{sup −3} M, the surface roughness varied in an opposite manner from approximately 120.18 nm to 29.36 nm. For these concentrations, optical band gap of the films decreased from 1.40 eV to 1.17 eV, whereas the Hall conductivity, mobility and carrier concentration of the films increased slightly from 5.91 × 10{sup −5} to 8.78 × 10{sup −5} (Ω cm){sup −1}, from 148 to 228 cm{sup 2} V{sup −1} s{sup −1} and from 1.73 × 10{sup 12} to 3.59 × 10{sup 12} cm{sup −1}, respectively.

  17. Effect of Reaction Time and Temperature on Chemical, Structural, Optical, and Photoelectrical Properties of PbS Thin Films Chemically Deposited from the Pb(OAc)2-NaOH-TU-TEA Aqueous System

    Science.gov (United States)

    Castelo-González, O. A.; Sotelo-Lerma, M.; García-Valenzuela, J. A.

    2016-08-01

    Lead sulfide (PbS) thin films have been deposited on float glass substrates by the chemical bath deposition technique using a Pb(CH3COO)2-NaOH-(NH2)2CS-N(CH2CH2OH)3 definite aqueous system. The chemical and structural characteristics, as well as the variation of the optical and photoelectrical properties, were studied as functions of reaction time and temperature. For this purpose, the following characterization techniques were employed: x-ray diffraction analysis, x-ray photoelectron spectroscopy, ultraviolet-visible-near infrared spectrophotometry, and dark and light current measurements. Based on the results, it was observed that increase in the reaction temperature increased the deposition rate of the PbS thin film (associated with the cubic crystalline structure); increase of this parameter from 40°C to 70°C (with reaction time of 60 min) led to an increase of the thickness from ˜129 nm to ˜459 nm and the crystallite size (D) from 15.3 nm to 20.2 nm; on the other hand, increase in temperature decreased the energy bandgap (E g) from 1.66 eV to 0.51 eV and the relative photosensitivity factor (S ph) from 0.468 to 0.032. A similar effect was obtained with increase of the reaction time for given temperature.

  18. Graphene growth with giant domains using chemical vapor deposition

    OpenAIRE

    Yong, Virginia; Hahn, H. Thomas

    2011-01-01

    We report the first demonstration of the growth of giant graphene domains on platinum (Pt), which results in a uniform bilayer graphene film with domain sizes of millimetre scale. These giant graphene domains are attributed to the giant Pt grains attained in post-deposition annealed Pt thin films that exhibit a strong dependency on the Pt film thickness. Giant grains have been claimed to occur in other metallic materials under appropriate film thicknesses and processing conditions. Our findin...

  19. Chemical vapor deposition of silicon carbide for large area mirrors

    Science.gov (United States)

    Gentilman, R. L.; Maguire, E. A.

    1982-05-01

    CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/alpha ratio and its ability to be super-polished to less than or equal to 10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.

  20. Metal organic chemical vapor deposition of environmental barrier coatings for the inhibition of solid deposit formation from heated jet fuel

    Science.gov (United States)

    Mohan, Arun Ram

    Solid deposit formation from jet fuel compromises the fuel handling system of an aviation turbine engine and increases the maintenance downtime of an aircraft. The deposit formation process depends upon the composition of the fuel, the nature of metal surfaces that come in contact with the heated fuel and the operating conditions of the engine. The objective of the study is to investigate the effect of substrate surfaces on the amount and nature of solid deposits in the intermediate regime where both autoxidation and pyrolysis play an important role in deposit formation. A particular focus has been directed to examining the effectiveness of barrier coatings produced by metal organic chemical vapor deposition (MOCVD) on metal surfaces for inhibiting the solid deposit formation from jet fuel degradation. In the first part of the experimental study, a commercial Jet-A sample was stressed in a flow reactor on seven different metal surfaces: AISI316, AISI 321, AISI 304, AISI 347, Inconel 600, Inconel 718, Inconel 750X and FecrAlloy. Examination of deposits by thermal and microscopic analysis shows that the solid deposit formation is influenced by the interaction of organosulfur compounds and autoxidation products with the metal surfaces. The nature of metal sulfides was predicted by Fe-Ni-S ternary phase diagram. Thermal stressing on uncoated surfaces produced coke deposits with varying degree of structural order. They are hydrogen-rich and structurally disordered deposits, spherulitic deposits, small carbon particles with relatively ordered structures and large platelets of ordered carbon structures formed by metal catalysis. In the second part of the study, environmental barrier coatings were deposited on tube surfaces to inhibit solid deposit formation from the heated fuel. A new CVD system was configured by the proper choice of components for mass flow, pressure and temperature control in the reactor. A bubbler was designed to deliver the precursor into the reactor

  1. Physical properties of nitrogen-doped diamond-like amorphous carbon films deposited by supermagnetron plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Diamond-like amorphous carbon films doped with nitrogen (DAC:N) were deposited on Si and glass wafers intermittently using i-C4H10/N2 repetitive supermagnetron plasma chemical vapor deposition. Deposition duration, which is equal to a plasma heating time of wafer, was selected to be 40 or 60 s, and several layers were deposited repetitively to form one thick film. DAC:N films were deposited at a lower-electrode temperature of 100 deg. C as a function of upper- and lower-electrode rf powers (200 W/200 W-1 kW/1 kW) and N2 concentration (0%-80%). With an increase in N2 concentration and rf power, the resistivity and the optical band gap decreased monotonously. With increase of the deposition duration from 40 to 60 s, resistivity decreased to 0.03Ω cm and optical band gap decreased to 0.02 eV (substantially equal to 0 eV within the range of experimental error), at an N2 concentration of 80% and rf power of 1 kW(/1 kW)

  2. Aluminium nitride coatings preparation using a chemical vapour deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Armas, B.; Combescure, C.; Icaza Herrera, M. de; Sibieude, F. [Centre National de la Recherche Scientifique (CNRS), 66 - Font-Romeu (France). Inst. de Science et du Genie des Materiaux et des Procedes

    2000-07-01

    Aluminium nitride was obtained in a cold wall reactor using AlCl{sub 3} and NH{sub 3} as precursors and N{sub 2} as a carrier gas. AlCl{sub 3} was synthesized << in situ >> by means of an original method based on the reaction of SiCl{sub 4(g)} with Al{sub (S)}. The substrate used was a cylinder of graphite coated with SiC and heated by high frequency induction. The deposition rate was studied as a function of temperature in the range 900 - 1500 C, the total pressure varying from 2 to 180 hPa. At low temperatures an Arrhenius type representation of the kinetics for several pressures indicated a thermally activated process with an apparent activation energy of about 80 kJ.mol{sup -1}. At high deposition temperatures, the deposition rate was almost constant, indicating that the growth was controlled by a diffusion process. The influence of gas composition and total AlCl{sub 3} flow rate was also discussed. The different layers were characterised particularly by means of X-ray diffraction and SEM. The influence of temperature and total pressure on crystallization and morphology was studied. (orig.)

  3. Chemical vapor deposition and characterization of titanium dioxide thin films

    Science.gov (United States)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  4. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    Science.gov (United States)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  5. PARTICLE COATING BY CHEMICAL VAPOR DEPOSITION IN A FLUIDI7ED BED REACTOR

    Institute of Scientific and Technical Information of China (English)

    Gregor; Czok; Joachim; Werther

    2005-01-01

    Aluminum coatings were created onto glass beads by chemical vapor deposition in a fluidized bed reactor at different temperatures. Nitrogen was enriched with Triisobutylaluminum (TIBA) vapor and the latter was thermally decomposed inside the fluidized bed to deposit the elemental aluminum. To ensure homogeneous coating on the bed material, the fluidizing conditions necessary to avoid agglomeration were investigated for a broad range of temperatures.The deposition reaction was modeled on the basis of a discrete particle simulation to gain insight into homogeneity and thickness of the coating throughout the bed material. In particular, the take-up of aluminum was traced for selected particles that exhibited a large mass of deposited aluminum.

  6. Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor

    Energy Technology Data Exchange (ETDEWEB)

    Song Xuemei; Gopireddy, Deepthi [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G. [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)], E-mail: takoudis@uic.edu

    2008-07-31

    In this study, we investigate the use of an amide-based Ti-containing precursor, namely tetrakis(diethylamido)titanium (TDEAT), for TiN{sub x}O{sub y} film deposition at low temperature. Traditionally, alkoxide-based Ti-containing precursor, such as titanium tetra-isopropoxide (TTIP), along with NH{sub 3} is used for titanium oxynitride (TiN{sub x}O{sub y}) film deposition. When TTIP is used, at low temperatures it is difficult to form TiN{sub x}O{sub y} films with high N/O ratios. In this study, by using TDEAT, TiN{sub x}O{sub y} films are deposited on H-passivated Si (100) substrates in a cold wall reactor at 300 {sup o}C and 106 Pa. Rutherford backscattering spectroscopy analysis shows nitrogen incorporation in the TiN{sub x}O{sub y} films to be as high as 28 at.%. X-ray photoelectron spectroscopy analysis of as-deposited films confirms the formation of{sub .} TiN{sub x}O{sub y}, while Fourier transform infrared and Raman spectra indicate that the films have amorphous structure. Moreover, there is no detectable bulk carbon impurity and no SiO{sub 2} formation at the TiN{sub x}O{sub y}/Si interface. Upon annealing the as-deposited films in air at 750 deg. C for 30 min, they oxidize to TiO{sub 2} and crystallize to form a rutile structure with a small amount of anatase phase. Based on these results, TDEAT appears to be a promising precursor for both TiN{sub x}O{sub y} and TiO{sub 2} film deposition.

  7. An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chu Juan [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); Jin Zhengguo, E-mail: zhgjin@tju.edu.cn [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Cai Shu [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Yang Jingxia [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Hong Zhanglian, E-mail: hong_zhanglian@zju.edu.cn [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2012-01-01

    Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV-Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm-19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.

  8. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    Science.gov (United States)

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  9. A new modular multichamber plasma enhanced chemical vapor deposition system

    Science.gov (United States)

    Madan, A.; Rava, P.; Schropp, R. E. I.; von Roedern, B.

    1993-06-01

    The present work reports on a new modular UHV multichamber PECVD system with characteristics which prevent both the incorporation of residual impurities and cross contamination between different layers. A wide range of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) materials have been produced and single junction pin solar cells with an efficiency greater than 10% have been readily obtained with little optimization. The system contains three UHV modular process zones (MPZ's); the MPZ's and a load lock chamber are located around a central isolation and transfer zone which contains the transport mechanism consisting of an arm with radial and linear movement. This configuration allows for introduction of the substrate into the MPZ's in any sequence so that any type of multilayer device can be produced. The interelectrode distance in the MPZ's can be adjusted between 1 and 5 cm. This has been found to be an important parameter in the optimisation of the deposition rate and of the uniformity. The multichamber concept also allows individually optimized deposition temperatures and interelectrode distances for the various layers. The system installed in Utrecht will be employed for further optimization of single junction solar cells and for research and development of stable a-Si:H tandem cells.

  10. Comparison of optical coatings deposited by novel physical and chemical techniques

    International Nuclear Information System (INIS)

    The authors have undertaken a systematic study of various methods of depositing good quality thin films of optically interesting materials by different physical and chemical methods in an effort to identify promising techniques for producing low-absorbing, low-scatter, high damage-threshold coatings. The deposition methods studied include e-beam deposition in a UHV environment, sol-gel processes utilizing hot isostatic pressing (HIP) to densify the films, photochemical deposition using organometallic reagents entrained in inert or potentially reactive gas flows, and ion-beam deposition in a reactive environment. The deposited single-layer films were analyzed using various surface analysis techniques to provide information on film composition, stoichiometry, and impurity level

  11. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  12. Two dimensional transition metal dichalcogenides grown by chemical vapor deposition

    OpenAIRE

    Tsang, Ka-yi; 曾家懿

    2014-01-01

    An atomically thin film of semiconducting transition metal dichalcogenides (TMDCs) is emerging as a class of key materials in chemistry and physics due to their remarkable chemical and electronic properties. The TMDCs are layered materials with weak out-of-plane van der Waals (vdW) interaction and strong in-plane covalent bonding enabling scalable exfoliation into two-dimensional (2D) layers of atomic thickness. The growth techniques to prepare these 2D TMDC materials in high yield and large ...

  13. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    Science.gov (United States)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  14. Chemical Weathering of New Pyroclastic Deposits from Mt. Merapi (Java), Indonesia

    Energy Technology Data Exchange (ETDEWEB)

    Fiantis, Dian; Nelson, Malik; Van Ranst, Eric; Shamshudin, Josup; Qafoku, Nikolla

    2009-09-01

    Java Island, Indonesia with abundant amount of pyroclastic deposits is located in the very active and dynamic Pacific Ring of Fires. Studying the geochemical weathering indices of these pyroclastic deposits is important to get a clear picture about weathering profiles on deposits resulting from the eruption of Mt. Merapi. Immediately after the first phase of the eruption (March to June 2006), moist and leached pyroclastic deposits were collected. These pyroclastic deposits were found to be composed of volcanic glass, plagioclase feldspar in various proportions, orthopyroxene, clinopyroxene, olivine, amphibole, and titanomagnetite. Total elemental composition of the bulk samples (including trace elements and heavy metals) were determined by wet chemical methods and X-ray fluorescence (XRF) analyses. Weathering of the pyroclastic deposits was studied using various weathering indices. The Ruxton ratio, weathering index of Parker, Vought resudual index and chemical index of weathering of moist pyroclastic are lower than the leached sample but the alteration indices (chemical and plagioclase) are slightly higher in the moist compared to the leached pyroclastic deposits.

  15. Ag2S deposited on oxidized polypropylene as composite material for solar light absorption

    NARCIS (Netherlands)

    Krylovaa, V.; Milbrat, A.; Embrachts, A.; Baltrusaitis, J.

    2014-01-01

    Thin film metal chalcogenides are superior solar light absorbers and can be combined into a functional material when deposited on polymeric substrates. Ag2S composite materials were synthesized on oxidized polypropylene using chemical bath deposition method and their properties were explored using X

  16. Metastable phase formation during chemical vapor deposition of niobium-germanium films

    International Nuclear Information System (INIS)

    Regularities of different metastable phase formation during chemical vapor deposition of niobium-germanium coatings were investigated. These coatings were deposited on wire and band metal substrates by method of chemical transport reactions with the use of iodine as transporting agent. It was shown that it was possible to deposite the metastable Nb5Ge3 phase with structure of T2 type and X phase with cubic structure and hypothetical Nb2Ge composition during iodide process using Nb3Ge alloy as initial material together with phases existing at state diagram. Metastable T2 and X phases are formed only at high total pressure (more 250-500 Pa) and deposition rate less 1 μm/min. Coatings on the base of Nb3Ge with germanium content from 11 to 23 at.% were obtained

  17. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

    Science.gov (United States)

    Hazbun, Ramsey; Hart, John; Hickey, Ryan; Ghosh, Ayana; Fernando, Nalin; Zollner, Stefan; Adam, Thomas N.; Kolodzey, James

    2016-06-01

    The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

  18. Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    QU Quan-yan; QIU Wan-qi; ZENG De-chang; LIU Zhong-wu; DAI Ming-jiang; ZHOU Ke-song

    2009-01-01

    The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K-cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

  19. [Immersion in a bath despite a safety bath chair].

    Science.gov (United States)

    Christensen, H B; Lange, A

    1989-01-01

    A case of submersion is described. A mother left her child aged 8 1/2 months sitting in a "safety bath chair" in a full bath and found the child lying under the water shortly afterwards. The infant was hypotonic for a brief period but rapidly recovered without sequelae. Use of a "safety bath chair" gives a false sense of security and its use is warned against. PMID:2911907

  20. Super-Hydrophobic and Oloephobic Crystalline Coatings by Initiated Chemical Vapor Deposition

    OpenAIRE

    Coclite, Anna Maria; Shi, Yujun; Gleason, Karen K.

    2013-01-01

    Preferred crystallographic orientation (texture) in thin films frequently has a strong effect on the properties of the materials and it is important for stable surface properties. Organized molecular films of poly-perfluorodecylacrylate p(PFDA) were deposited by initiated Chemical Vapor Deposition (iCVD). The high tendency of p(PFDA) to crystallize has been fully retained in the polymers prepared by iCVD. The degree of crystallinity and the preferred orientation of the perfluoro side chains, ...

  1. Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure

    OpenAIRE

    Croonen, Y.; Verspui, G.

    1993-01-01

    Laser induced Chemical Vapour Deposition of a wide variety of materials has been studied extensively at reduced pressures. However, for this technique to be economically and industrially applicable, processes at atmospheric pressure are preferred. A model study was made on the substrate-coating system molybdenum-titaniumnitride focussing on the feasibility to deposit TiN films locally at atmospheric pressure. The results of this study turned out to be very promising. A Nd-YAG laser beam ([MAT...

  2. Physico-chemical study of the focused electron beam induced deposition process

    OpenAIRE

    Bret, Tristan; Hoffmann, Patrik

    2007-01-01

    The focused electron beam induced deposition process is a promising technique for nano and micro patterning. Electrons can be focused in sub-angström dimensions, which allows atomic-scale resolution imaging, analysis, and processing techniques. Before the process can be used in controlled applications, the precise nature of the deposition mechanism must be described and modelled. The aim of this research work is to present a physical and chemical description of the focused electron beam induc...

  3. Discrete formulation of mixed finite element methods for vapor deposition chemical reaction equations

    Institute of Scientific and Technical Information of China (English)

    LUO Zhen-dong; ZHOU Yan-jie; ZHU Jiang

    2007-01-01

    The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical modes by the following governing nonlinear partial differential equations containing velocity vector,temperature field,pressure field,and gas mass field.The mixed finite element(MFE)method is employed to study the system of equations for the vapor deposition chemical reaction processes.The semidiscrete and fully discrete MFE formulations are derived.And the existence and convergence(error estimate)of the semidiscrete and fully discrete MFE solutions are deposition chemical reaction processes,the numerical solutions of the velocity vector,the temperature field,the pressure field,and the gas mass field can be found out simultaneonsly.Thus,these researches are not only of important theoretical means,but also of extremely extensive applied vistas.

  4. Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD)

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Min; Blackman, Chris [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

    2015-07-15

    Aerosol assisted chemical vapour deposition (AACVD) is used to deposit tungsten oxide thin films from tungsten hexacarbonyl (W(CO){sub 6}) at 339 to 358 C on quartz substrate. The morphologies of as-deposited thin films, which are comprised of two phases (W{sub 25}O{sub 73} and W{sub 17}O{sub 47}), vary from planar to nanorod (NR) structures as the distance from the inlet towards the outlet of the reactor is traversed. This is related to variation of the actual temperature on the substrate surface (ΔT = 19 C), which result in a change in growth mode due to competition between growth rate (perpendicular to substrate) and nucleation rate (parallel to substrate). When the ratio of perpendicular growth rate to growth rate contributed by nucleation is higher than 7.1, the as-deposited tungsten oxide thin film forms as NR. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    International Nuclear Information System (INIS)

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling

  6. Surface transformations of carbon (graphene, graphite, diamond, carbide), deposited on polycrystalline nickel by hot filaments chemical vapour deposition

    International Nuclear Information System (INIS)

    The deposition of carbon has been studied at high temperature on polycrystalline nickel by hot filaments activated chemical vapor deposition (HFCVD). The sequences of carbon deposition are studied by surface analyses: Auger electron spectroscopy (AES), electron loss spectroscopy (ELS), X-ray photoelectron spectroscopy (XPS) in a chamber directly connected to the growth chamber. A general scale law of the (C/Ni) intensity lines is obtained with a reduced time. Both, shape analysis of the AES C KVV line and the C1s relative intensity suggest a three-step process: first formation of graphene and a highly graphitic layer, then multiphase formation with graphitic, carbidic and diamond-like carbon and finally at a critical temperature that strongly depends on the pretreatment of the polycrystalline nickel surface, a rapid transition to diamond island formation. Whatever the substrate diamond is always the final product and some graphene layers the initial product. Moreover it is possible to stabilize a few graphene layers at the initial sequences of carbon deposition. The duration of this stabilization step is strongly depending however on the pre-treatment of the Ni surface.

  7. Surface modification of reverse osmosis desalination membranes by thin-film coatings deposited by initiated chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ozaydin-Ince, Gozde, E-mail: gozdeince@sabanciuniv.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Matin, Asif, E-mail: amatin@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Khan, Zafarullah, E-mail: zukhan@mit.edu [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Zaidi, S.M. Javaid, E-mail: zaidismj@kfupm.edu.sa [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gleason, Karen K., E-mail: kkgleasn@mit.edu [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2013-07-31

    Thin-film polymeric reverse osmosis membranes, due to their high permeation rates and good salt rejection capabilities, are widely used for seawater desalination. However, these membranes are prone to biofouling, which affects their performance and efficiency. In this work, we report a method to modify the membrane surface without damaging the active layer or significantly affecting the performance of the membrane. Amphiphilic copolymer films of hydrophilic hydroxyethylmethacrylate and hydrophobic perfluorodecylacrylate (PFA) were synthesized and deposited on commercial RO membranes using an initiated chemical vapor deposition technique which is a polymer deposition technique that involves free-radical polymerization initiated by gas-phase radicals. Relevant surface characteristics such as hydrophilicity and roughness could be systematically controlled by varying the polymer chemistry. Increasing the hydrophobic PFA content in the films leads to an increase in the surface roughness and hydrophobicity. Furthermore, the surface morphology studies performed using the atomic force microscopy show that as the thickness of the coating increases average surface roughness increases. Using this knowledge, the coating thickness and chemistry were optimized to achieve high permeate flux and to reduce cell attachment. Results of the static bacterial adhesion tests show that the attachment of bacterial cells is significantly reduced on the coated membranes. - Highlights: • Thin films are deposited on reverse osmosis membranes. • Amphiphilic thin films are resistant to protein attachment. • The permeation performance of the membranes is not affected by the coating. • The thin film coatings delayed the biofouling.

  8. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    Science.gov (United States)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  9. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.

    1999-10-20

    This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

  10. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    NI Jie; LI Zhengcao; ZHANG Zhengjun

    2007-01-01

    In this paper,we report a simple approach to synthesize silicon carbide(SiC)nanowires by solid phase source chemical vapor deposition(CVD) at relatively low temperatures.3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates,and the nanowires are 20-80 am in diameter and several μm in length,with a growth direction of[200].The growth of the nanowires agrees well on vapor-liquid-solid (VLS)process and the film deposited on the substrates plays an important role in the formation of nanowires.

  11. LASER-INDUCED DECOMPOSITION OF METAL CARBONYLS FOR CHEMICAL VAPOR DEPOSITION OF MICROSTRUCTURES

    OpenAIRE

    Tonneau, D.; Auvert, G.; Pauleau, Y.

    1989-01-01

    Tungsten and nickel carbonyls were used to produce metal microstructures by laser-induced chemical vapor deposition (CVD) on various substrates. The deposition rate of microstructures produced by thermodecomposition of W(CO)6 on Si substrates heated with a cw Ar+ laser beam was relatively low (10 to 30 nm/s) even at high temperatures (above 900°C). Ni microstructures were deposited on quartz substrates irradiated with a CO2 laser beam. Relatively high laser powers were needed to heat the Ni s...

  12. Deposition of air-borne 238Pu near a chemical separation facility

    International Nuclear Information System (INIS)

    Three methods were compared to measure deposition of 238Pu released from a chemical separation facility at the Savannah River Plant, Aiken, SC. The following methods were used: adhesive paper; a collector of rain and dryfall; and soil samples. Excellent agreement among the three methods was found. The measured deposition for the particular source term and meteorological conditions at the Savannah River Plant is described by y proportional to x/sup -1.36/ where y is the pCi of 238Pu deposited per square meter per mC: 238Pu released, and x is distance in meters from the source

  13. The chemical evolution of a travertine-depositing stream: geochemical processes and mass transfer reactions

    Science.gov (United States)

    Lorah, M.M.; Herman, J.S.

    1988-01-01

    Focuses on quantiatively defining the chemical changes occurring in Falling Spring Creek, a travertine-depositing stream located in Alleghany County, Virgina. The processes of CO2 outgassing and calcite precipitation or dissolution control the chemical evolution of the stream. Physical evidence for calcite precipitation exists in the travertine deposits which are first observed immediately above the waterfall and extend for at least 1.0 km below the falls. Net calcite precipitation occurs at all times of the year but is greatest during low-flow conditions in the summer and early fall. -from Authors

  14. Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

    OpenAIRE

    Sharma, Subash; Kalita, Golap; Vishwakarma, Riteshkumar; Zulkifli, Zurita; Tanemura, Masaki

    2015-01-01

    In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal w...

  15. Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHAO Guo-Liang; LIN Bi-Xia; HONG Liang; MENG Xiang-Dong; FU Zhu-Xi

    2004-01-01

    ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source used here is zinc acetate, (CHsCOO)2Zn, and the carrier gas is nitrogen. The sample, which was prepared at 550℃ during growth and then annealed in air at 900℃ , has only a ZnO (002) diffraction peak at 34.6° with its FWHM of 0.23° in the XRD pattern. The room-temperature PL spectrum shows a strong ultraviolet emission with the peak centred at 380nm. We analysed the effects of many factors, such as the source, substrates, growth and annealing temperatures, and annealing ambience, on the structural and optical properties of our prepared ZnO films.

  16. Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Gu Guang-Rui; Wu Bao-Jia; Jin Zhe; Ito Toshimichi

    2008-01-01

    This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture.The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy,respectively.The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm2 and a current density of 3.2mA/cm2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%.The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

  17. Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

    Science.gov (United States)

    Gu, Guang-Rui; Wu, Bao-Jia; Jin, Zhe; Ito, Toshimichi

    2008-02-01

    This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm2 and a current density of 3.2mA/cm2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

  18. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    International Nuclear Information System (INIS)

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of ∼ 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  19. Tunable optoelectronic properties of CBD-CdS thin films via bath temperature alterations

    Science.gov (United States)

    Kumarage, W. G. C.; Wijesundera, R. P.; Seneviratne, V. A.; Jayalath, C. P.; Dassanayake, B. S.

    2016-03-01

    The tunability of the band-gap value and electron affinity of the n-CdS by adjusting the growth parameters is very important as it paves the way to improve the efficiency of CdS-based solar cells by adjusting the band lineup with other p-type semiconductors. In this respect, polycrystalline n-CdS thin films were grown on FTO glass substrates at different bath temperatures (40-80 °C) by the chemical bath deposition technique. The structural, morphological and optoelectronic properties of CdS thin films were studied using x-ray diffraction, scanning electron microscopy, UV-Vis spectrometry, profilometry, atomic force microscopy, photoelectrochemical and Mott-Schottky measurements. Absorption measurements reveal that an energy-gap value of n-CdS can be adjusted from 2.27 to 2.57 eV and Mott-Schottky measurements indicate that the flat-band potential is increased from  -699 to  -835 V with respect to a Ag/AgCl electrode by decreasing the deposition bath temperature from 60 to 40 °C. This tunability of optoelectronic properties of n-CdS is very useful for applications in thin film solar cells and other devices.

  20. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

    OpenAIRE

    Zhu, Wenjuan; Low, Tony; Lee, Yi-Hsien; Wang, Han; Farmer, Damon B.; Kong, Jing; Xia, Fengnian; Avouris, Phaedon

    2013-01-01

    Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic pr...

  1. Growth and properties of few-layer graphene prepared by chemical vapor deposition

    OpenAIRE

    Park, Hye Jin; Meyer, Jannik; Roth, Siegmar; Skakalova, Viera

    2009-01-01

    The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM) images show highly crystalline single layer parts of the sample changing to multilayer domains where crystal boundaries are connected by chemical bonds. This suggests two different growth mechanisms. CVD and carbon segregation participate in the growth process ...

  2. CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    Zhang Yong-ping; Gu You-song; Chang Xiang-rong; Tian Zhong-zhuo; Shi Dong-xia; Zhang Xiu-fang; Yuan lei

    2000-01-01

    The crystalline carbon nitride thin films have beenprepared on Si (100) substrates using microwave plasma chemical vapordeposition technique. The experimental X-ray diffractionpattern of the films prepared contain all the strongpeaks of -C3N4 and -C3N4, but most of thepeaks are overlapped.The films are composed of -C3N4 and -C3N4.The N/C atomic ratio isclose to the stoichiometric value 1.33. X-ray photoelectronspectroscopic analysis indicated that thebinding energies of C 1s and N 1s are 286.43eV and 399.08 eV respectively.The shifts are attributed to the polarization of C-N bond. Bothobserved Raman and Fourier transform infrared spectra werecompared with the theoretical calculations. The results support theexistence of C-N covalent bond in - and -C3N4 mixture.

  3. Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

    International Nuclear Information System (INIS)

    Thin films of Pt-doped CeO2 were grown by direct liquid injection chemical vapor deposition on silicon wafer covered by native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to the deposition way. For platinum deposited on top of cerium oxide thin films previously grown, metallic platinum particles were obtained. Cerium and platinum codeposition allowed obtaining a Pt0 and Pt2+ mixture with the Pt2+ to Pt ratio strongly dependent on the platinum flow rate during the deposition. Indeed, the lower the platinum precursor flow rate is, the higher the Pt2+ to Pt ratio is. Moreover, surface and cross-sectional morphologies obtained by scanning electron microscopy evidenced porous layers in any case. - Highlights: • Pt-doped ceria were synthesized. • Films were obtained by direct liquid injection chemical vapor deposition. • Simultaneous deposition of Pt and Ce was used to obtain homogeneous films. • Pt2+ was revealed through X-ray photoelectron spectroscopy. • Different routes were used to exalt Pt2+/Pt ratio

  4. Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zanfoni, N.; Avril, L.; Imhoff, L.; Domenichini, B., E-mail: bruno.domenichini@u-bourgogne.fr; Bourgeois, S.

    2015-08-31

    Thin films of Pt-doped CeO{sub 2} were grown by direct liquid injection chemical vapor deposition on silicon wafer covered by native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to the deposition way. For platinum deposited on top of cerium oxide thin films previously grown, metallic platinum particles were obtained. Cerium and platinum codeposition allowed obtaining a Pt{sup 0} and Pt{sup 2+} mixture with the Pt{sup 2+} to Pt ratio strongly dependent on the platinum flow rate during the deposition. Indeed, the lower the platinum precursor flow rate is, the higher the Pt{sup 2+} to Pt ratio is. Moreover, surface and cross-sectional morphologies obtained by scanning electron microscopy evidenced porous layers in any case. - Highlights: • Pt-doped ceria were synthesized. • Films were obtained by direct liquid injection chemical vapor deposition. • Simultaneous deposition of Pt and Ce was used to obtain homogeneous films. • Pt{sup 2+} was revealed through X-ray photoelectron spectroscopy. • Different routes were used to exalt Pt{sup 2+}/Pt ratio.

  5. Thermoluminescence Characteristics of a New Production of Chemical Vapour Deposition Diamond

    Energy Technology Data Exchange (ETDEWEB)

    Furetta, C.; Kitis, G.; Brambilla, A.; Jany, C.; Bergonzo, P.; Foulon, F

    1999-07-01

    The dosimetric properties are presented of a recent production of chemical vapour deposition diamond growth. Experimental data concerning the TL response as a function of dose, the energy response and fading behaviour are reported. Very preliminary results suggest that diamond can be used in TL mode as well as an activation detector. (author)

  6. Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina;

    2016-01-01

    A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar...

  7. Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

    OpenAIRE

    Cao, H. L.; Yu, Q. K.; Jauregui, L. A.; Tian, J; Wu, W.; Z. Liu; Jalilian, R.; Benjamin, D. K.; Jiang, Z.; J. Bao; Pei, S S; Chen, Y P

    2009-01-01

    We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field ...

  8. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.;

    2005-01-01

    investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

  9. Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Well-aligned ZnO nanowires were grown on Si substrate by chemical vapor deposition.The experimental results showed that the density of nanowires was related to the heating process and growth temperature.High-density ZnO nanowires were obtained under optimal conditions.The growth mechanism of the ZnO nanowires was presented as well.

  10. CHEMICALLY DEPOSITED SILVER FILM USED AS A SERS-ACTIVE OVER COATING LAYER FOR POLYMER FILM

    Institute of Scientific and Technical Information of China (English)

    Xiao-ning Liu; Gi Xue; Yun Lu; Jun Zhang; Fen-ting Li; Chen-chen Xue; Stephen Z.D. Cheng

    2001-01-01

    When colloidal silver particles were chemically deposited onto polymer film as an over-coating layer, surfaceenhanced Raman scattering (SERS) spectra could be collected for the surface analysis. SERS measurements of liquid crystal film were successfully performed without disturbing the surface morphology.

  11. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    Energy Technology Data Exchange (ETDEWEB)

    Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London, WC1H 0AJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London, WC1H 0NN (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS (United Kingdom)

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research. - Graphical abstract: Schematic demonstration of the effect of thermochromic glazing on solar radiation (red arrow represents IR radiation, black arrow represents all other solar radiation). - Highlights: • Vanadium dioxide thin films for energy efficient glazing. • Reviews chemical vapour deposition techniques. • Latest results for thin film deposition for vanadium dioxide.

  12. Chemical vapor deposition of ZrC within a spouted bed by bromide process

    Science.gov (United States)

    Ogawa, T.; Ikawa, K.; Iwamoto, K.

    1981-03-01

    ZrC coatings by chemical vapor deposition were applied to particles of ThO 2, UO 2 and Al 2O 3 at 1623-1873 K. The feed gas mixture consisted of ZrBr 4, CH 4, H 2 and Ar. The results were compared with the calculated chemical equilibria in the Zr-C-H-Br system. It was shown that the weight and composition of the deposit can be calculated by thermochemical analysis after correcting the methane flow rate for a pyrolysis efficiency. Predominant reaction presumably occurring were derived by a mass balance consideration on the calculated equilibrium species. A simplified model of the ZrC deposition was proposed.

  13. A Study on Medium Temperature Chemical Vapor Deposition (MT-CVD) Technology and Super Coating Materials

    Institute of Scientific and Technical Information of China (English)

    GAO Jian; LI Jian-ping; ZENG Xiang-cai; MA Wen-cun

    2004-01-01

    In this paper, the dense and columnar crystalline TiCN coating layers with very good bonding strength between a layer and another layer was deposited using Medium Temperature Chemical Vapor Deposition (MT-CVD) where CH3CN organic composite with C/N atomic clusters etc. was utilized at 700 ~ 900 ℃. Effect of coating processing parameters, such as coating temperature, pressure and different gas flow quantity on structures and properties of TiCN coating layers were investigated. The super coating mechanis mand structures were analyzed. The new coating processing parameters and properties of carbide inserts with super coating layers were gained by using the improved high temperature chemical vapor deposition (HTCVD) equipment and HT-CVD, in combination with MT-CVD technology.

  14. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  15. Deposition kinetics and characterization of stable ionomers from hexamethyldisiloxane and methacrylic acid by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Urstöger, Georg; Resel, Roland; Koller, Georg; Coclite, Anna Maria

    2016-04-01

    A novel ionomer of hexamethyldisiloxane and methacrylic acid was synthesized by plasma enhanced chemical vapor deposition (PECVD). The PECVD process, being solventless, allows mixing of monomers with very different solubilities, and for polymers formed at high deposition rates and with high structural stability (due to the high number of cross-links and covalent bonding to the substrate) to be obtained. A kinetic study over a large set of parameters was run with the aim of determining the optimal conditions for high stability and proton conductivity of the polymer layer. Copolymers with good stability over 6 months' time in air and water were obtained, as demonstrated by ellipsometry, X-Ray reflectivity, and FT-IR spectroscopy. Stable coatings showed also proton conductivity as high as 1.1 ± 0.1 mS cm-1. Chemical analysis showed that due to the high molecular weight of the chosen precursors, it was possible to keep the plasma energy-input-per-mass low. This allowed limited precursor fragmentation and the functional groups of both monomers to be retained during the plasma polymerization.

  16. Chemical Alteration Pathways Resulting in High-Silica Deposits on Mars

    Science.gov (United States)

    Yen, A. S.; Gellert, R.; Clark, B. C.; Ming, D. W.; Morris, R. V.; Mittlefehldt, D. W.

    2015-12-01

    The chemical compositions of nearly 1000 targets at the surface of Mars have been established by the cross-calibrated Alpha-Particle X-ray Spectrometers (APXS) onboard the Mars Science Laboratory (MSL) and the two Mars Exploration Rovers (MER). Comparing and contrasting these measurements provides greater insight into martian surface processes than the standalone use of data from an individual mission. For example, the combination of MER and MSL APXS data indicate two distinct pathways for silicate weathering: 1. Open system alteration at circumneutral pH. Fracture-filling deposits in impact breccias at the rim of Endeavour Crater analyzed by the Opportunity rover show the highest SiO2 concentrations at Meridiani Planum (62 wt%) with correlated Si and Al (Si:Al ~0.3). These Mg and Fe-depleted veins have chemical signatures consistent with an Al-rich smectite and likely formed as a precipitate from non-acidic aqueous solutions. Similar high Si and Al deposits found at the Gusev landing site by the Spirit rover were interpreted as montmorillonite. 2. Open system, acid-sulfate alteration. In sharp contrast to Si and Al-rich deposits, a group of high-Si targets have low concentrations of Al. Deposits in Gusev Crater near "Home Plate," a hydrothermal locale with nearby fumarolic deposits, fall into this category. Acid-sulfate processes are likely responsible for mobilizing most other elements, including Al, leaving behind a Si-rich, and generally Ti-rich, residue. Recent high-Si samples (up to 72 wt% SiO2) analyzed by the Curiosity rover exhibit similar chemical patterns, including elevated TiO2 concentrations, suggestive that acidic leaching may also have been an important process in the development of deposits found within Gale Crater. The framework of chemical analyses established through years of Mars surface operations provides the basis against which future measurements by Opportunity, Curiosity and the Mars 2020 rover can be compared.

  17. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  18. Synthesis of low leakage current chemical vapour deposited (CVD) diamond films for particle detection

    International Nuclear Information System (INIS)

    We report on synthesis of diamond films by direct current glow discharge chemical vapour deposition (CVD) prepared at different deposition conditions, for application in high energy physics. The synthesis apparatus is briefly described. Continuous undoped diamond samples have been grown onto Mo substrates with a deposition area up to 1 cm2 and an electrical resistivity as high as 1013 Ωcm. The deposition parameters are related to the material properties of the diamonds, investigated by optical spectroscopy, electron microscopy and diffraction analysis. Decreasing the linear growth rate results in good quality films with small remnants of graphite-like phases. The high crystalline quality and phase purity of the films are related to very low values of leakage currents. The particle induced conductivity of these samples is also studied and preliminary results on charge collection efficiency are presented. (orig.)

  19. Processes and environmental significance of the subglacial chemical deposits in Tianshan Mountains

    Institute of Scientific and Technical Information of China (English)

    LIU; Gengnian; LUO; Risheng; CAO; Jun

    2005-01-01

    On the bedrock surface of Glacier No.1 in the headwater of Urumqi River, Tianshan Mts., well layered and crystallized subglacial calcite precipitations were discovered. Based on observations and analysis of the surface form, sedimentary texture and structure, and chemical composition of the deposits, clues about the subglacial processes and environment are deduced. The radial-growth crustation texture of the deposits, which builds up in the saturated CaCO3 solution, proves the existence of pressure melting water and water films under Glacier No.1; and their rhythmic beddings, dissolved planes and unconformable contacts show that the water films responsible for the formation of these structures were in a wide range of spatial as well as temporal variations. Though formed under continental glacier in non-limestone area, the deposits are quite similar to those formed under temperate glaciers in limestone areas, a fact that shows a similar process of chemical precipitation between the two. Hence the enrichment of calcium in the subglacial melting water and the process of precipitation have actually little to do with the bedrock lithology and the glacier types. The cemented detritus in the deposits are rich in Fe and Al while depleted in K, Na and Si; also the included clay mineral consists mainly of illite, which reveals some weak chemical weathering under the continental glacier. The subglacial CaCO3 precipitates when plenty of Ca++ melt into the subglacial melting water on a comparatively enclosed ice-bedrock interface under a high CO2 partial pressure, the forming of subglacial chemical deposits therefore offers unequivocal evidence for the ongoing of subglacial chemical reactions.

  20. Sputter deposition of transition-metal carbide films — A critical review from a chemical perspective

    Energy Technology Data Exchange (ETDEWEB)

    Jansson, Ulf, E-mail: ulf.jansson@kemi.uu.se [Department of Chemistry, Ångström, Uppsala Universitet (Sweden); Lewin, Erik [Laboratory for Nanoscale Materials Science, Empa (Switzerland); Department of Chemistry, Ångström, Uppsala Universitet (Sweden)

    2013-06-01

    Thin films based on transition-metal carbides exhibit many interesting physical and chemical properties making them attractive for a variety of applications. The most widely used method to produce metal carbide films with specific properties at reduced deposition temperatures is sputter deposition. A large number of papers in this field have been published during the last decades, showing that large variations in structure and properties can be obtained. This review will summarise the literature on sputter-deposited carbide films based on chemical aspects of the various elements in the films. By considering the chemical affinities (primarily towards carbon) and structural preferences of different elements, it is possible to understand trends in structure of binary transition-metal carbides and the ternary materials based on these carbides. These trends in chemical affinity and structure will also directly affect the growth process during sputter deposition. A fundamental chemical perspective of the transition-metal carbides and their alloying elements is essential to obtain control of the material structure (from the atomic level), and thereby its properties and performance. This review covers a wide range of materials: binary transition-metal carbides and their nanocomposites with amorphous carbon; the effect of alloying carbide-based materials with a third element (mainly elements from groups 3 through 14); as well as the amorphous binary and ternary materials from these elements deposited under specific conditions or at certain compositional ranges. Furthermore, the review will also emphasise important aspects regarding materials characterisation which may affect the interpretation of data such as beam-induced crystallisation and sputter-damage during surface analysis.

  1. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  2. On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Handuja Sangeeta

    2010-01-01

    Full Text Available Abstract Carbon nanotubes (CNTs were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.

  3. Chemical vapor deposition of atomically thin materials for membrane dialysis applications

    Science.gov (United States)

    Kidambi, Piran; Mok, Alexander; Jang, Doojoon; Boutilier, Michael; Wang, Luda; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Atomically thin 2D materials like graphene and h-BN represent a new class of membranes materials. They offer the possibility of minimum theoretical membrane transport resistance along with the opportunity to tune pore sizes at the nanometer scale. Chemical vapor deposition has emerged as the preferable route towards scalable, cost effective synthesis of 2D materials. Here we show selective molecular transport through sub-nanometer diameter pores in graphene grown via chemical vapor deposition processes. A combination of pressure driven and diffusive transport measurements shows evidence for size selective transport behavior which can be used for separation by dialysis for applications such as desalting of biomolecular or chemical solutions. Principal Investigator

  4. Influence of bath temperature and bath composition on Co-Ag electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Torres, Jose; Valles, Elisa [Electrodep, Departament de Quimica Fisica and Institut de Nanociencia i Nanotecnologia (IN' ' 2UB) de la Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Gomez, Elvira, E-mail: e.gomez@ub.ed [Electrodep, Departament de Quimica Fisica and Institut de Nanociencia i Nanotecnologia (IN' ' 2UB) de la Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)

    2010-08-01

    A study of the best conditions to prepare smooth heterogeneous Co-Ag films with low amounts of S from a thiourea-based electrolytic bath has been performed. Using a 0.01 M AgClO{sub 4} + 0.1 M Co(ClO{sub 4}){sub 2} + 0.1 M thiourea + 0.1 M sodium gluconate + 0.3 M H{sub 3}BO{sub 3} + 0.1 M NaClO{sub 4} bath, low temperature (10 {sup o}C) allowed obtaining compact and smooth deposits containing 2 wt.% sulphur. Decreasing thiourea content 0.06 M and increasing gluconate concentration up to 0.3 M, better deposits (more compact with lower sulphur content (1.2 wt.%)) were obtained. A clear influence of the species present in the bath on the film quality was observed: while gluconate favoured film cohesion, boric acid hindered hydrogen adsorption. For all films, fcc-Ag, hcp-Co and hcp-CoAg{sub 3} phases were always detected by XRD, TEM and electron diffraction, their proportions varying with the electrodeposition conditions. Magnetic measurements revealed that the increase in the CoAg{sub 3} led to an increase in the film coercivity. GMR values were only measured at cryogenic temperatures, they being higher for the deposits with the lowest sulphur content revealing that sulphur exerts a negative effect on magnetoresistance.

  5. Influence of precursor solution parameters on chemical properties of calcium phosphate coatings prepared using Electrostatic Spray Deposition (ESD).

    NARCIS (Netherlands)

    Leeuwenburgh, S.C.G.; Wolke, J.G.C.; Schoonman, J.; Jansen, J.A.

    2004-01-01

    A novel coating technique, referred to as Electrostatic Spray Deposition (ESD), was used to deposit calcium phosphate (CaP) coatings with a variety of chemical properties. The relationship between the composition of the precursor solutions and the crystal and molecular structure of the deposited coa

  6. Electric field assisted aerosol assisted chemical vapour deposition of nanostructured metal oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Naik, Anupriya J.T.; Bowman, Christopher; Panjwani, Naitik [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); Warwick, Michael E.A. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); UCL Energy Institute, Central House, 14 Upper Woburn Place, London WC1H 0HY (United Kingdom); Binions, Russell, E-mail: r.binions@qmul.ac.uk [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H OAJ (United Kingdom); School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2013-10-01

    Nanostructured thin films of tungsten, vanadium and titanium oxides were deposited on gas sensor substrates from the electric field assisted chemical vapour deposition reaction of tungsten hexaphenoxide, vanadyl acetylacetonate and titanium tetraisopropoxide respectively. The electric fields were generated by applying a potential difference between the inter-digitated electrodes of the gas sensor substrates during the deposition. The deposited films were characterised using scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The application of an electric field, encouraged the formation of interesting and unusual nanostructured morphologies, with a change in scale length and island packing. It was also noted that crystallographic orientation of the films could be controlled as a function of electric field type and strength. The gas sensor properties of the films were also examined; it was found that a two to three fold enhancement in the gas response could be observed from sensors with enhanced morphologies compared to control sensors grown without application of an electric field. - Highlights: • Electric field assisted chemical vapour deposition method • Ability to create high surface area film architectures • Can produce enhanced sensor response • Good control over film properties.

  7. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  8. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista-UNESP, Avenida Tres de Marco, 511, Alto da Boa Vista, 18087-180, Soracaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Rouxinol, Francisco P.M.; Gelamo, Rogerio V. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Trasferetti, B. Claudio [Present address: Superintendencia Regional da Policia Federal em Sao Paulo, Setor Tecnico-Cientifico, Rua Hugo d' Antola 95/10o Andar, Lapa de Baixo, 05038-090 Sao Paulo, SP (Brazil); Davanzo, C.U. [Instituto de Quimica, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Bica de Moraes, Mario A. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil)

    2008-01-15

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V{sub S}) and of the proportion of TEOS in the mixture (X{sub T}) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V{sub S} and X{sub T} are presented.

  9. Characterization of Boron Carbonitride (BCN Thin Films Deposited by Radiofrequency and Microwave Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. A. Mannan

    2008-01-01

    Full Text Available Boron carbonitride (BCN thin films with a thickness of ~4 µ­m were synthesized on Si (100 substrate by radiofrequency and microwave plasma enhanced chemical vapor deposition using trimethylamine borane [(CH33N.BH3] as a molecular precursor. The microstructures of the films were evaluated using field emission scanning electron microscopy (FE-SEM and X-ray diffractometry (XRD. Fourier transform infrared spectroscopy (FT-IR and X-ray photoelectron spectroscopy (XPS were used to analyze the chemical bonding state and composition of the films. It has been observed that the films were adhered well to the silicon substrate even after being broken mechanically. XRD and FE-SEM results showed that the films were x-ray amorphous, rough surface with inhomogeneous microstructure. The micro hardness was measured by nano-indentation tester and was found to be approximately 2~7 GPa. FT-IR suggested the formation of the hexagonal boron carbonitride (h-BCN phase in the films. Broadening of the XPS peaks revealed that B, C and N atoms have different chemical bonds such as B-N, B-C and C-N. The impurity oxygen was detected (13~15 at.% as B-O and/or N-O.

  10. The protective properties of thin alumina films deposited by metal organic chemical vapour deposition against high-temperature corrosion of stainless steels

    NARCIS (Netherlands)

    Morssinkhof, R.W.J.; Fransen, T.; Heusinkveld, M.M.D.; Gellings, P.J.

    1989-01-01

    Coatings of Al2O3 were deposited on Incoloy 800H and AISI 304 by means of metal organic chemical vapour deposition. Diffusion limitation was the rate-determining step above 420 °C. Below this temperature, the activation energy of the reaction appeared to be 30 kJ mol−1. Coating with Al2O3 increases

  11. Microstructural characterization and chemical compatibility of pulsed laser deposited yttria coatings on high density graphite

    International Nuclear Information System (INIS)

    Yttria coatings were deposited on high density (HD) graphite substrate by pulsed laser deposition method and subsequently annealing in vacuum at 1373 K was carried out to evaluate the thermal stability of the coatings. Yttria deposited on HD graphite samples were exposed to molten LiCl–KCl salt at 873 K for 3 h to evaluate the corrosion behavior of the coating for the purpose of pyrochemical reprocessing applications. The microstructure and the corrosion behavior of the yttria coating deposited on HD graphite in molten LiCl–KCl salt were evaluated by several characterization techniques. X-ray diffraction and Laser Raman patterns confirmed the presence of cubic phase of yttria in the coating. The surface morphology of yttria coating on HD graphite examined by scanning electron microscope and atomic force microscopy revealed the agglomeration of oxide particles and formation of clusters. After annealing at 1373 K, no appreciable grain growth of yttria particles could be observed. X-ray photoelectron spectroscopy analysis was carried out for elemental analysis before and after chemical compatibility test of the coated samples in molten LiCl–KCl salt to identify the corrosive elements present on the yttria coatings. The chemical compatibility and thermal stability of the yttria coating on HD graphite in molten LiCl–KCl salt medium have been established. - Highlights: • Y2O3 coating was deposited on graphite by pulsed laser deposition method. • Chemical compatibility of Y2O3 coating in LiCl–KCl salt at 873 K was studied. • Gibbs free energy change was positive for Y2O3 reaction with Cl2, U and UCl3. • Y2O3 coating exhibited better corrosion performance in molten LiCl–KCl salt

  12. Microstructural characterization and chemical compatibility of pulsed laser deposited yttria coatings on high density graphite

    Energy Technology Data Exchange (ETDEWEB)

    Sure, Jagadeesh [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Mishra, Maneesha [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Tarini, M. [SRM University, Kattankulathur-603 203 (India); Shankar, A. Ravi; Krishna, Nanda Gopala [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Kuppusami, P. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Mallika, C. [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India); Mudali, U. Kamachi, E-mail: kamachi@igcar.gov.in [Corrosion Science and Technology Group, Indira Gandhi Centre for Atomic Research, Kalpakkam — 603 102 (India)

    2013-10-01

    Yttria coatings were deposited on high density (HD) graphite substrate by pulsed laser deposition method and subsequently annealing in vacuum at 1373 K was carried out to evaluate the thermal stability of the coatings. Yttria deposited on HD graphite samples were exposed to molten LiCl–KCl salt at 873 K for 3 h to evaluate the corrosion behavior of the coating for the purpose of pyrochemical reprocessing applications. The microstructure and the corrosion behavior of the yttria coating deposited on HD graphite in molten LiCl–KCl salt were evaluated by several characterization techniques. X-ray diffraction and Laser Raman patterns confirmed the presence of cubic phase of yttria in the coating. The surface morphology of yttria coating on HD graphite examined by scanning electron microscope and atomic force microscopy revealed the agglomeration of oxide particles and formation of clusters. After annealing at 1373 K, no appreciable grain growth of yttria particles could be observed. X-ray photoelectron spectroscopy analysis was carried out for elemental analysis before and after chemical compatibility test of the coated samples in molten LiCl–KCl salt to identify the corrosive elements present on the yttria coatings. The chemical compatibility and thermal stability of the yttria coating on HD graphite in molten LiCl–KCl salt medium have been established. - Highlights: • Y{sub 2}O{sub 3} coating was deposited on graphite by pulsed laser deposition method. • Chemical compatibility of Y{sub 2}O{sub 3} coating in LiCl–KCl salt at 873 K was studied. • Gibbs free energy change was positive for Y{sub 2}O{sub 3} reaction with Cl{sub 2}, U and UCl{sub 3}. • Y{sub 2}O{sub 3} coating exhibited better corrosion performance in molten LiCl–KCl salt.

  13. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  14. Chemical vapor deposition of tungsten (CVD W) as submicron interconnection and via stud

    International Nuclear Information System (INIS)

    Blanket-deposited chemical vapor deposition of tungsten (CVD W) has been developed and implemented in a 4-Mbit DRAM and equivalent submicron VLSI technologies. CVD W was applied as contact stud, interconnect, and interlevel via stud. The technologies have been proven reliable under several reliability stress conditions. Major technical problems involved in CVD W processing, such as adhesion, contact resistance, etchability, and hole fill are discussed. A novel technique that uses TiN as a contact and adhesion layer is presented. This technique has lead to the resolution of the above technical problem and significantly improved the manufacturability of blanket CVD W processes

  15. Preparation of Dispersed Platinum Nanoparticles on a Carbon Nanostructured Surface Using Supercritical Fluid Chemical Deposition

    Directory of Open Access Journals (Sweden)

    Mineo Hiramatsu

    2010-03-01

    Full Text Available We have developed a method of forming platinum (Pt nanoparticles using a metal organic chemical fluid deposition (MOCFD process employing a supercritical fluid (SCF, and have demonstrated the synthesis of dispersed Pt nanoparticles on the surfaces of carbon nanowalls (CNWs, two-dimensional carbon nanostructures, and carbon nanotubes (CNTs. By using SCF-MOCFD with supercritical carbon dioxide as a solvent of metal-organic compounds, highly dispersed Pt nanoparticles of 2 nm diameter were deposited on the entire surface of CNWs and CNTs. The SCF-MOCFD process proved to be effective for the synthesis of Pt nanoparticles on the entire surface of intricate carbon nanostructures with narrow interspaces.

  16. The pyrolytic decomposition of ATSB during chemical vapour deposition of thin alumina films

    OpenAIRE

    Haanappel, V.A.C.; Corbach, van, H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    The effect of the deposition temperature and the partial pressure of water on the thermal decomposition chemistry of aluminium-tri-sec-butoxide (ATSB) during metal organic chemical vapour deposition (MOCVD) is reported. The MOCVD experiments were performed in nitrogen at atmospheric pressure. The partial pressure of ATSB was 0.026 kPa (0.20 mmHg) and that of water was between 0 and 0.026 kPa (0–0.20 mmHg). The pyrolytic decomposition chemistry of ATSB was studied by mass spectrometry at tempe...

  17. Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

    International Nuclear Information System (INIS)

    We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis due to its high heat and mass transfer efficiency and well-controlled flow parameters. Experimental studies of CVD microreactor technology are slow and expensive. Analytical solution of the governing equations is impossible due to the complexity of intertwined non-linear physical and chemical processes. Computer simulation is the most effective tool for design and optimization of microreactors. Our computational fluid dynamics model employs mass, momentum and energy balance equations for a laminar transient flow of a chemically reacting gas mixture at low Reynolds number. Simulation results show the influence of microreactor configuration and process parameters on SiO2 deposition rate and uniformity. We simulated three microreactors with the central channel diameter of 5, 10, 20 micrometers, varying gas flow rate in the range of 5-100 microliters per hour and temperature in the range of 300-800 °C. For each microchannel diameter we found an optimal set of process parameters providing the best quality of deposited material. The model will be used for optimization of the microreactor configuration and technological parameters to facilitate the experimental stage of this research

  18. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization.

    Science.gov (United States)

    Güzeldir, Betül; Sağlam, Mustafa

    2015-11-01

    Different chemical methods such as Successive Ionic Layer Adsorption and Reaction (SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide thin films on the glass substrates. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) spectroscopy and UV-vis spectrophotometry. The XRD and SEM studies showed that all the films exhibit polycrystalline nature and crystallinity of copper selenide thin films prepared with spray pyrolysis greater than spin coating and SILAR methods. From SEM and AFM images, it was observed copper selenide films were uniform on the glass substrates without any visible cracks or pores. The EDX spectra showed that the expected elements exist in the thin films. Optical absorption studies showed that the band gaps of copper selenide thin films were in the range 2.84-2.93 eV depending on different chemical methods. The refractive index (n), optical static and high frequency dielectric constants (ε0, ε∞) values were calculated by using the energy bandgap values for each deposition method. The obtained results from different chemical methods revealed that the spray pyrolysis technique is the best chemical deposition method to fabricate copper selenide thin films. This absolute advantage was lead to play key roles on performance and efficiency electrochromic and photovoltaic devices. PMID:26037495

  19. The effects of chemical oxide on the deposition of tungsten by the silicon reduction of tungsten hexaflouride

    International Nuclear Information System (INIS)

    The effects of thin (chemical) oxide grown during the chemical cleaning of silicon wafers on the silicon reduction of tungsten hexaflouride have been investigated. Unlike tungsten deposition on samples without the chemical oxide, deposition thickness on those with the chemical oxide was found to be substantially thicker. Inspection by cross sectional SEM and TEM revealed the existence of micro-channels penetrating the tungsten film, reaching all the way from the surface of the film to the tungsten/silicon interface. These channels enable tungsten hexaflouride to reach the substrate, thus causing unlimited tungsten growth. Because the silicon surface participates directly in the reaction, it should be expected that the reaction itself be influenced by the chemical treatment of the surface prior to tungsten deposition. Under certain deposition conditions, and for properly prepared silicon surfaces, silicon reduction is known to result in self limiting tungsten deposition

  20. Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition

    OpenAIRE

    Alpuim, P.; Chu, Virginia; Conde, João Pedro

    1999-01-01

    The effect of hydrogen dilution on the optical, transport, and structural properties of amorphous and microcrystalline silicon thin films deposited by hot-wire (HW) chemical vapor deposition and radio-frequency (rf) plasma-enhanced chemical vapor deposition using substrate temperatures (T-sub) of 100 and 25 degrees C is reported. Microcrystalline silicon (mu c-Si:H) is obtained using HW with a large crystalline fraction and a crystallite size of similar to 30 nm for hydrogen dilutions above 8...

  1. Thin film cadmium telluride solar cells by two chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.

    1988-01-15

    Cadmium telluride (CdTe) has long been recognized as a promising thin film photovoltaic material. In this work, polycrystalline p-CdTe films have been deposited by two chemical vapor deposition techniques, namely the combination of vapors of elements (CVE) and close-spaced sublimation (CSS). The CVE technique is more flexible in controlling the composition of deposited films while the CSS technique can provide very high deposition rates. The resistivity of p-CdTe films deposited by the CVE and CSS techniques can be controlled by intrinsic (cadmium vacancies) or extrinsic (arsenic or antimony) doping, and the lowest resistivity obtainable is about 200 ..cap omega.. cm. Both front-wall (CdTe/TCS/glass) and back-wall (TCS/CdTe/substrate) cells have been prepared. The back-wall cells are less efficient because of the high and irreproducible p-CdTe-substrate interface resistance. The CSS technique is superior to the CVE technique because of its simplicity and high deposition rates; however, the cleaning of the substrate in situ is more difficult. The interface cleanliness is an important factor determining the electrical and photovoltaic characteristics of the heterojunction. Heterojunction CdS/CdTe solar cells of area 1 cm/sup 2/ with conversion efficiencies higher than 10% have been prepared and junction properties characterized.

  2. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    Science.gov (United States)

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-01

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films. PMID:16448130

  3. Chlorhexidine gluconate: to bathe or not to bathe?

    Science.gov (United States)

    Rubin, Caroline; Louthan, Rufina Bavin; Wessels, Erica; McGowan, Mary-Bridgid; Downer, Shantee; Maiden, Jeanne

    2013-01-01

    Despite infection-prevention initiatives, hospital-acquired infections (HAIs) are still a common occurrence. Chlorhexidine gluconate (CHG) is an important antibacterial agent. Research indicates that the intervention of bathing with CHG can reduce the number of HAIs. Chlorhexidine gluconate is known to reduce the bioload of several bacteria, including multiple strains of methicillin-resistant Staphylococcus aureus. Research regarding the intervention of bathing with CHG was assessed and found to reduce central line-related blood stream infections, ventilator-associated pneumonia, and vancomycin-resistant enterococci. The reduction in HAIs was found to be greater as compared to bathing with soap and water. The reduction of these HAIs will allow for a saving of resources, finances and staff time, which may ultimately be passed on to the patient. While further research is indicated, a strong conclusion is drawn that bathing with CHG reduces the number of HAIs. PMID:23470709

  4. Mechanical properties of carbon-modified silicon oxide barrier films deposited by plasma enhanced chemical vapor deposition on polymer substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bieder, A. [Institute of Process Engineering, ETH Zurich, CH-8092 Zurich (Switzerland); Gondoin, V. [Institute of Process Engineering, ETH Zurich, CH-8092 Zurich (Switzerland); Leterrier, Y. [Laboratoire de Technologie des Composites et Polymeres (LTC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Tornare, G. [Laboratoire de Technologie des Composites et Polymeres (LTC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Rohr, Ph. Rudolf von [Institute of Process Engineering, ETH Zurich, CH-8092 Zurich (Switzerland)]. E-mail: vonrohr@ipe.mavt.ethz.ch; Manson, J.-A. E. [Laboratoire de Technologie des Composites et Polymeres (LTC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2007-05-07

    Cohesive and adhesive properties of silicon oxide barrier coatings deposited from an oxygen/hexamethyldisiloxane gas mixture by plasma enhanced chemical vapor deposition, with controlled incorporation of carbon on 12 {mu}m thick polyethylene terephtalate films were investigated. The reactor was equipped with a 2.45 GHz slot antenna plasma source and a 13.56 MHz-biased substrate holder. The two plasma sources were operated separately or in a dual mode. It was found that no or negligible internal stresses were introduced in the silicon oxide coatings as long as the increase of energy experienced by the film was compensated by the densification of the oxide. For a range of process parameters and carbon content on the changes of the crack onset strain, adhesion, and cohesion were found to be similar. Generally a high crack onset strain or good adhesion and cohesion were measured for films with an increased carbon content, although this was obtained at the expense of the gas barrier performance. Promising approaches towards high-barrier thin films with good mechanical integrity are proposed, based on coatings with a gradient in the carbon content and in the mechanical properties, on nano-composite laminates, and on organo-silane treatments.

  5. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    International Nuclear Information System (INIS)

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiNX) and silicon dioxide (SiO2), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiNX buffer layer is wider than SiO2 and the maximum grain size slightly increased

  6. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Park, Joong-Hyun [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Han, Sang-Myeon [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Park, Sang-Geun [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Han, Min-Koo [School of Electrical Engineering (50), Seoul National University, Shinlim-Dong, Gwanak-Gu, Seoul (Korea, Republic of); Shin, Moon-Young [LTPS Team, AMLCD Business, Samsung Electronics Co., Giheung, Yongin City (Korea, Republic of)

    2006-09-01

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN{sub X}) and silicon dioxide (SiO{sub 2}), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,{lambda}=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN{sub X} buffer layer is wider than SiO{sub 2} and the maximum grain size slightly increased.

  7. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. PMID:27442970

  8. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes

    International Nuclear Information System (INIS)

    Silicon (Si) thin films were produced using an aerosol assisted atmospheric pressure chemical vapor deposition technique with liquid hydrosilane precursors cyclopentasilane (CPS, Si5H10) and cyclohexasilane (CHS, Si6H12). Thin films were deposited at temperatures between 300 and 500 °C, with maximum observed deposition rates of 55 and 47 nm/s for CPS and CHS, respectively, at 500 °C. Atomic force microscopic analyses of the films depict smooth surfaces with roughness of 4–8 nm. Raman spectroscopic analysis indicates that the Si films deposited at 300 °C and 350 °C consist of a hydrogenated amorphous Si (a-Si:H) phase while the films deposited at 400, 450, and 500 °C are comprised predominantly of a hydrogenated nanocrystalline Si (nc-Si:H) phase. The wide optical bandgaps of 2–2.28 eV for films deposited at 350–400 °C and 1.7–1.8 eV for those deposited at 450–500 °C support the Raman data and depict a transition from a-Si:H to nc-Si:H. Films deposited at 450 oC possess the highest photosensitivity of 102–103 under AM 1.5G illumination. Based on the growth model developed for other silanes, we suggest a mechanism that governs the film growth using CPS and CHS. - Highlights: • Si films via AA-APCVD are realized using cyclopentasilane (CPS) and cyclohexasilane (CHS). • Low activation energies of CPS and CHS allow Si thin films at low temperatures (300 °C). • High growth rates of 47–55 nm/s were obtained at 500 °C • Near device quality Si thin films with 2–3 orders of photosensitivity • Si thin films via AA-APCVD are amenable to continuous roll-to-roll manufacturing

  9. Synthesis and Growth Mechanism of Carbon Filaments by Chemical Vapor Deposition without Catalyst

    Institute of Scientific and Technical Information of China (English)

    Shuhe Liu; Feng Li; Shuo Bai

    2009-01-01

    Carbon filaments with diameter from several to hundreds micrometers were synthesized by chemical vapor deposition of methane without catalyst. The morphology, microstructure and mechanical properties of the carbon filament were investigated by scanning electronic microscopy, optical microscopy, X-ray diffraction and mechanical testing. The results show that the carbon filament is inverted cone shape and grows up along the gas flow direction. The stem of it is formed of annular carbon layers arranged in a tree ring structure while the head is made up of concentrical layers. The tensile strength of the carbon filament is increased after graphitization for the restructuring and growing large of graphene. The growth mechanism of carbon filament was proposed according to the results of two series of experiments with different deposition time and intermittent deposition cycles.

  10. The Synthesized of Carbon Nano tubes from Palm Oil by Topas Atomizer Chemical Vapor Deposition Method

    International Nuclear Information System (INIS)

    This paper focused on preparation of Carbon Nano tubes (CNTs) based on palm oil as a natural resource precursor. The Topas Atomizer was utilized to vapor up the carbon gas into the reaction chamber of Chemical Vapor Deposition (CVD) to yield the CNTs in powder form at the inner wall of the Quartz tube. The purpose of this work was to investigate the effects of deposition temperature from 650 - 850 degree Celsius. The samples characteristics were analyzed by Raman spectroscopy. The results revealed that the increasing of the deposition temperature, the ID/IG ratio decreased from 650 - 850 degree Celsius. The results of Field Emission Scanning Electron Microscopy (FESEM) are also presented. (author)

  11. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm−1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm

  12. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Viswanathan S Saji; Han Cheol Choe

    2010-06-01

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was ∼ 2000 and tan ∼ 0.05.

  13. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    International Nuclear Information System (INIS)

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 deg. C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs

  15. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Ferroelectric thin films of lead zirconate titanate Pb(ZrxTi1-x)O3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  16. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    Science.gov (United States)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  17. High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

    Science.gov (United States)

    Zhang, W. J.; Jiang, X.; Matsumoto, S.

    2001-12-01

    Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface.

  18. LOW PRESSURE CHEMICAL VAPOR DEPOSITION (CVD) ON OXIDE AND NONOXIDE CERAMIC CUTTING TOOLS

    OpenAIRE

    Layyous, A.; Wertheim, R.

    1989-01-01

    Cutting tools made of Al2O3+TiC, silicon nitride, carbide, and stabilized ZrO2 were coated by chemical vapor deposition (CVD) with a multilayer of TiN, TiCN, TiC and Al2O3 in different combinations. The adhesion of the coated layers to the substrate, and the structure of the layers were investigated by optical microscopy, scanning electron microscopy (SEM) and Auger spectroscopy. This made it possible to analyze the chemical interaction between the substrate and the TiN at 1000°C. The cutting...

  19. Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

    Science.gov (United States)

    Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

    2006-01-01

    Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

  20. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    International Nuclear Information System (INIS)

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects

  1. Spectroscopy of Individual Single-Walled Carbon Nanotubes and their Synthesis via Chemical Vapor Deposition

    OpenAIRE

    Kiowski, Oliver

    2008-01-01

    A chemical vapor deposition (CVD) reactor was designed, built and used to grow vertically and horizontally aligned carbon nanotube arrays. The as-grown nanotubes were investigated on a single tube level using nearinfrared photoluminescence (PL) microscopy as well as Raman, atomic force and scanning electron microscopy (SEM). For photoluminescence excitation (PLE) spectroscopy of individual, semiconducting single-walled carbon nanotubes (SWNTs), a specialized PL set-up was constructed.

  2. Corrosion resistant chemical vapor deposited coatings for SiC and Si3N4

    OpenAIRE

    Graham, David W

    1993-01-01

    Silicon carbide and silicon nitride turbine engine components are susceptible to hot corrosion by molten sodium sulfate salts which are formed from impurities in the engine's fuel and air intake. Several oxide materials were identified which may be able to protect these components from corrosion and preserve their structural properties. Ta20, coatings were identified as one of the most promising candidates. Thermochemical calculations showed that the chemical vapor deposition(CVD) of tantalum...

  3. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    OpenAIRE

    Sung-Jin Chang; Moon Seop Hyun; Sung Myung; Min-A Kang; Jung Ho Yoo; Lee, Kyoung G.; Bong Gill Choi; Youngji Cho; Gaehang Lee; Tae Jung Park

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from R...

  4. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition

    OpenAIRE

    Friel, I.; Clewes, S L; Dhillon, H. K.; Perkins, N.; Twitchen, D. J.; Scarsbrook, G. A.

    2009-01-01

    In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers, control over surface and bulk crystalline quality is of great importance. Inductively coupled plasma (ICP) etching using an Ar/Cl gas mixture is demonstrated to remove sub-surface damage of mechanically processed surfaces, whilst maintaining macro...

  5. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    P. Haniam

    2014-01-01

    Full Text Available Thin films of cobalt oxides (CoO and Co3O4 fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures.

  6. Fundamental Studies of the Chemical Vapour Deposition of Graphene on Copper

    OpenAIRE

    Lewis, Amanda

    2014-01-01

    The chemical vapour deposition (CVD) of graphene is the most promising route for production of large-area graphene films. However there are still major challenges faced by the field, including control of the graphene coverage, quality, and the number of layers. These challenges can be overcome by developing a fundamental understanding of the graphene growth process. This thesis contributes to the growing body of work on graphene CVD by uniquely exploring the gas phas...

  7. Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition.

    Science.gov (United States)

    Wang, Huan; Zhou, Yu; Wu, Di; Liao, Lei; Zhao, Shuli; Peng, Hailin; Liu, Zhongfan

    2013-04-22

    Substitutionally boron-doped monolayer graphene film is grown on a large scale by using a sole phenylboronic acid as the source in a low-pressure chemical vapor deposition system. The B-doped graphene film is a homogeneous monolayer with high crystalline quality, which exhibits a stable p-type doping behavior with a considerably high room-temperature carrier mobility of about 800 cm(2) V(-1) s(-1) . PMID:23463717

  8. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    OpenAIRE

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C; Jung, W.; Kim, M.; Park, C. -Y.

    2011-01-01

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall trans...

  9. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition

    OpenAIRE

    Ma, Teng; Ren, Wencai; Zhang, Xiuyun; Liu, Zhibo; Gao, Yang; Yin, Li-Chang; Ma, Xiu-Liang; Ding, Feng; Cheng, Hui-Ming

    2013-01-01

    Controlled synthesis of wafer-sized single crystalline high-quality graphene is a great challenge of graphene growth by chemical vapor deposition because of the complicated kinetics at edges that govern the growth process. Here we report the synthesis of single-crystal graphene domains with tunable edges from zigzag to armchair via a growth–etching–regrowth process. Both growth and etching of graphene are strongly dependent on the edge structure. This growth/etching behavior is well explained...

  10. Fabrication of efficient planar perovskite solar cells using a one-step chemical vapor deposition method

    OpenAIRE

    Mohammad Mahdi Tavakoli; Leilei Gu; Yuan Gao; Claas Reckmeier; Jin He; Rogach, Andrey L; Yan Yao; Zhiyong Fan

    2015-01-01

    Organometallic trihalide perovskites are promising materials for photovoltaic applications, which have demonstrated a rapid rise in photovoltaic performance in a short period of time. We report a facile one-step method to fabricate planar heterojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conversion efficiency of up to 11.1%. We performed a systematic optimization of CVD parameters such as temperature and growth time to obtain high quality films of CH...

  11. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  12. Growth of Aligned Carbon Nanotubes through Microwave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    王升高; 汪建华; 马志斌; 王传新; 满卫东

    2005-01-01

    Aligned carbon nanotubes (CNTs) were synthesized on glass by microwave plasma chemical vapor deposition (MWPCVD) with a mixture of methane and hydrogen gases at the low temperature of 550 ℃. The experimental results show that both the self-bias potential and the density of the catalyst particles are responsible for the alignment of CNTs. When the catalyst particle density is high enough, strong interactions among the CNTs can inhibit CNTs from growing randomly and result in parallel alignment.

  13. Laser-assisted chemical liquid-phase deposition of metals for micro- and optoelectronics

    OpenAIRE

    Kordás, K. (Krisztián)

    2002-01-01

    Abstract The demands toward the development of simple and cost-effective fabrication methods of metallic structures with high lateral resolution on different substrates - applied in many fields of technology, such as in microelectronics, optoelectronics, micromechanics as well as in sensor and actuator applications - gave the idea to perform this research. Due to its simplicity, laser-assisted chemical liquid-phase deposition (LCLD) has been investigated and applied for the metallization o...

  14. High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

    OpenAIRE

    Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of...

  15. Fluidized bed as a solid precursor delivery system in a chemical vapor deposition reactor

    OpenAIRE

    Vahlas, Constantin; Caussat, Brigitte; Senocq, François; Gladfelter, Wayne L.; Sarantopoulos, Christos; Toro, David; Moersch, Tyler

    2005-01-01

    Chemical vapor deposition (CVD) using precursors that are solids at operating temperatures and pressures, presents challenges due to their relatively low vapor pressures. In addition, the sublimation rates of solid state precursors in fixed bed reactors vary with particle and bed morphology. In a recent patent application, the use of fluidized bed (FB) technology has been proposed to provide high, reliable, and reproducible flux of such precursors in CVD processes. In the present contribution...

  16. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  17. Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition

    International Nuclear Information System (INIS)

    Highlights: ► Process parameters to control hot-wire CVD of WO3−x are categorized. ► Growth time, oxygen partial pressure, filament and substrate temperature are varied. ► Chemical and crystal structure, optical bandgap and morphology are determined. ► Oxygen partial pressure determines the deposition rate up to as high as 36 μm min−1. ► Nanostructures, viz. wires, crystallites and closed crystallite films, are controllably deposited. - Abstract: We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was varied from 6.0 × 10−6 to 1.0 mbar and the current through the filaments was varied from 4.0 to 9.0 A, which constitutes a filament temperature of 1390–2340 °C in vacuum. It is observed that the deposition rate of the films is predominantly determined by the oxygen partial pressure; it changes from about 1 to about 36,000 nm min−1 in the investigated range. Regardless of the oxygen partial pressure and filament temperature used, thin films with a nanogranular morphology are obtained, provided that the depositions last for 30 min or shorter. The films consist either of amorphous or partially crystallized WO3−x with high averaged transparencies of over 70% and an indirect optical band gap of 3.3 ± 0.1 eV. A prolonged deposition time entails an extended exposure of the films to thermal radiation from the filaments, which causes crystallization to monoclinic WO3 with diffraction maxima due to the (0 0 2), (2 0 0) and (0 2 0) crystallographic planes, furthermore the nanograins sinter and the films exhibit a cone-shaped growth. By simultaneously influencing the surface mobility, by heating the substrates to Tsurface = 700 ± 100 °C, and the deposition rate, a very good control of the morphology of the

  18. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  19. Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ying; Frank Leung-Yuk Lam; HU Xijun; YAN Zifeng

    2006-01-01

    Copper nanorods have been synthesized in mesoporous SBA-15 by a low-temperature metal organic chemical vapor deposition (MOCVD)employing copper (Ⅱ) acetylacetonate, Cu(acac)2,and hydrogen as a precursor and reactant gas, respectively. The hydrogen plays an important role in chemical reduction of oganometallic precursor which enhances mass transfer in the interior of the SBA-15 porous substrate. Such copper nanostructures are of great potentials in the semiconductor due to their unusual optical, magnetic and electronic properties.In addition, it has been found that chemically modifying the substrate surface by carbon deposition is crucial to such synthesis of copper nanostructures in the interior of the SBA-15, which is able to change the surface properties of SBA-15 from hydrophilic to hydrophobic to promote the adsorption of organic cupric precursor. It has also been found that the copper nanoparticles deposited on the external surface are almost eliminated and the copper nanorods are more distinct while the product was treated with ammonia. This approach could be achieved under a mild condition: a low temperature (400℃) and vacuum (2 kPa) which is extremely milder than the conventional method. It actually sounds as a foundation which is the first time to synthesize a copper nanorod at a mild condition of a low reaction temperature and pressure.

  20. Silica-titania composite aerogel photocatalysts by chemical liquid deposition of titania onto nanoporous silica scaffolds.

    Science.gov (United States)

    Zu, Guoqing; Shen, Jun; Wang, Wenqin; Zou, Liping; Lian, Ya; Zhang, Zhihua

    2015-03-11

    Silica-titania composite aerogels were synthesized by chemical liquid deposition of titania onto nanoporous silica scaffolds. This novel deposition process was based on chemisorption of partially hydrolyzed titanium alkoxides from solution onto silica nanoparticle surfaces and subsequent hydrolysis and condensation to afford titania nanoparticles on the silica surface. The titania is homogeneously distributed in the silica-titania composite aerogels, and the titania content can be effectively controlled by regulating the deposition cycles. The resultant composite aerogel with 15 deposition cycles possessed a high specific surface area (SSA) of 425 m(2)/g, a small particle size of 5-14 nm, and a large pore volume and pore size of 2.41 cm(3)/g and 18.1 nm, respectively, after heat treatment at 600 °C and showed high photocatalytic activity in the photodegradation of methylene blue under UV-light irradiation. Its photocatalytic activity highly depends on the deposition cycles and heat treatment. The combination of small particle size, high SSA, and enhanced crystallinity after heat treatment at 600 °C contributes to the excellent photocatalytic property of the silica-titania composite aerogel. The higher SSAs compared to those of the reported titania aerogels (aerogels promising candidates as photocatalysts.

  1. Self-assembly of octadecyltrichlorosilane monolayers on silicon-based substrates by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dong Jinping [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Wang Anfeng [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Ng, K.Y. Simon [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Mao Guangzhao [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States)]. E-mail: gzmao@eng.wayne.edu

    2006-12-05

    Increasingly, organosilane self-assembled monolayers (SAMs) are used to modify the surfaces of silicon-based sensors and atomic force microscope (AFM) probes. Organosilane SAMs are preferred due to their fast and easy preparation, stability, and applicability to a wide range of substrates. The traditional dip coating method from solution often yields ill-defined particulate aggregates on the two-dimensional SAM. The presence of such three-dimensional aggregates seriously reduces the performance of miniaturized biosensor devices and AFM probes. It is difficult to control the amount of water in solution-based deposition. This paper describes a chemical vapor deposition (CVD) method to deposit octadecyltrichlorosilane (OTS) monolayers on silicon wafers and AFM probes under vacuum condition. OTS coated surfaces with static water contact angle ranging from 20{sup o} to 107{sup o} can be obtained by controlling the deposition conditions. The silicon substrates and AFM probes after CVD are characterized by AFM, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and contact angle goniometry. The OTS monolayer is in a uniform low-density state below 65%. Above 65%, densely packed crystalline-like domains start to form. It takes 24 h to reach the adsorption saturation. The time span in the CVD deposition is much longer than the solution case and thus allowing precise variation of the substrate hydrophobicity for biosensor applications.

  2. Incorporation of Nitrogen into Amorphous Carbon Films Produced by Surface-Wave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    Wu Yuxiang(吴玉祥); Zhu Xiaodong(朱晓东); Zhan Rujuan(詹如娟)

    2003-01-01

    In order to study the influence of nitrogen incorporated into amorphous carbon films,nitrogenated amorphous carbon films have been deposited by using surface wave plasma chemical vapor deposition under various ratios of N2/CH4 gas flow. Optical emission spectroscopy has been used to monitor plasma features near the deposition zone. After deposition, the samples are checked by Raman spectroscopy and x-ray photo spectroscopy (XPS). Optical emission intensities of CH and N atom in the plasma are found to be enhanced with the increase in the N2/CH4 gas flow ratio, and then reach their maximums when the N2/CH4 gas flow ratio is 5%. A contrary variation is found in Raman spectra of deposited films. The intensity ratio of the D band to the G band (ID/IG) and the peak positions of the G and D bands all reach their minimums when the N2/CH4 gas flow ratio is 5%. These show that the structure of amorphous carbon films has been significantly modified by introduction of nitrogen.

  3. Latest innovations in large area web coating technology via plasma enhanced chemical vapor deposition source technology

    International Nuclear Information System (INIS)

    In this article, the authors discuss the latest results of our development of large area plasma enhanced chemical vapor deposition (PECVD) source technologies for flexible substrates. A significant challenge is the economical application of thin films for use as vapor barriers, transparent conductive oxides, and optical interference thin films. Here at General Plasma the authors have developed two innovative PECVD source technologies that provide an economical alternative to low temperature sputtering technologies and enable some thin film materials not accessible by sputtering. The Penning Discharge Plasma (PDP trade mark sign ) source is designed for high rate direct PECVD deposition on insulating, temperature sensitive web [J. Modocks, Proceedings of the Society of Vacuum Coaters, 2003 (unpublished), p. 187]. This technology has been utilized to deposit SiO2 and SiC:H for barrier applications [V. Shamamian et al. Proceedings of the Flexible Displays and Manufacturing Conferrence, 2006 (unpublished)]. The Plasma Beam Source (PBS trade mark sign ) is a remote plasma source that is more versatile for deposition on not only insulating flexible substrates but also conductive or rigid substrates for deposition of thin films that are sensitive to the high ion bombardment flux inherent to the PDP trade mark sign technology. The authors have developed PBS thin film processes in our laboratory for deposition of SiO2, SiC:O, SiN:C, SiN:H, ZnO, FeOx, and Al2O3. [M. A. George, Conference Proceedings of the Association of Industrial Metallizers, Coaters, and Laminators (AIMCAL), 2007 (unpublished)]. The authors discuss the design of the patented sources, plasma physics, and chemistry of the deposited thin films.

  4. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  5. Temporal and spatial trends of chemical composition of wet deposition samples collected in Austria

    Science.gov (United States)

    Schreiner, Elisabeth; Kasper-Giebl, Anne; Lohninger, Hans

    2016-04-01

    Triggered by the occurrence of acid rain a sampling network for the collection of wet deposition samples was initiated in Austria in the early 1980s. Now the data set covers a time period of slightly more than 30 years for the stations being operable since the beginning. Sampling of rain water and snow was and is performed with Wet and Dry Only Samplers (WADOS) on a daily basis. Chemical analysis of rain water and snow samples comprised anions (chloride, nitrate, sulfate) and cations (sodium, ammonium, potassium, calcium and magnesium) as well as pH and electrical conductivity. Here we evaluate and discuss temporal trends of both, ion concentrations and wet deposition data for twelve sampling stations, which were operable for most of the observation period of 30 years. As expected concentrations and wet deposition loads of sulfate and acidity decreased significantly during the last three decades - which is also reflected by a strong decrease of sulfur emissions in Austria and neighboring countries. Regarding nitrate the decrease of concentrations and wet deposition loads is less pronounced. Again this is in accordance with changes in emission data. In case of ammonium even less stations showed a significant decrease of annual average concentrations and depositions. Reasons for that might be twofold. On one hand emissions of ammonia did not decrease as strongly as e.g. sulfur emissions. Furthermore local sources will be more dominant and can influence the year to year variability. Seasonality of ion concentrations and deposition loads were investigated using Fourier analysis. Sulfate, nitrate, ammonium, acidity and also precipitation amount showed characteristic seasonal patterns for most of the sites and for concentrations as well as deposition loads. However the maxima in ion concentrations and deposition loads were observed during different times of the year. Concentrations of basic cations and chloride, on the contrary, hardly showed any seasonality. However, as

  6. Green wet chemical route to synthesize capped CdSe quantum dots

    Indian Academy of Sciences (India)

    A Oudhia; P Bichpuria

    2014-02-01

    In the present work, we report green synthesis of tartaric acid (TA) and triethanolamine (TEA) capped cadmium selenide quantum dots (CdSe QDs) employing chemical bath deposition (CBD) method. The mechanism of capping using non-toxic binary capping agents is also discussed. Stable QDs of various sizes were obtained by varying pH of the bath. The structural, morphological and spectroscopic characterization of the as-prepared samples by XRD, SEM, optical absorption and photoluminescence (PL) is also reported.

  7. Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Alloying elemental high-k metal oxides (such as HfO2) with other metals is seen as an effective method of controlling the properties of the dielectric based on the concentration of cations in the mixture; in particular, mixing HfO2 with Al2O3, and forming hafnium aluminate layers which will still have a relatively high dielectric constant (typically k ∼ 15) and remain amorphous up to high processing temperatures. This paper summarizes the results of physical and electrical characterisation of hafnium aluminate (HfAl xO y) films prepared by Metal-Organic Chemical Vapour Deposition. We show how, using ultraviolet-visible, single angle ellipsometry, the thickness and composition of the deposited and of the transition/interfacial layers can be extracted, and further used for the estimation of the relative dielectric constant. Moreover, a methodology for extracting the band gap of these materials and its dependence on the aluminium concentration is presented. This has been achieved by using a simple parameterization model (Wemple-Di Domenico) to account for the optical dispersion of the films. Preparing thin films with a relatively high dielectric constant and with an amorphous structure even at high processing temperatures, are not the only requirements to be achieved when such layers are to be used as gate dielectrics. The electrical characteristics - such as leakage current, density of interface states, fixed charge in the oxide - are extremely important. The results obtained through capacitance-voltage and current-voltage measurements show the possibility of adjusting the relative dielectric constant of the layers in a wide range (9-16), when the aluminium concentration varies between 4% and 38%. The minimum leakage current occurs for Al concentrations up to 9%. The thinner films show Fowler-Nordheim conduction even at higher concentrations of Al into the film, while thicker films show a higher hysteresis due to an increased number of slow trapping centres in the

  8. Supercritical fluid chemical deposition of Pd nanoparticles on magnesium–scandium alloy for hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Couillaud, Samuel; Kirikova, Marina [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Zaïdi, Warda; Bonnet, Jean-Pierre [LRCS, UMR CNRS 6007, 33 rue Saint-Leu, 80039-Amiens (France); Marre, Samuel; Aymonier, Cyril [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Zhang, Junxian; Cuevas, Fermin; Latroche, Michel [ICMPE, CNRS-UPEC, UMR 7182, 2-8 rue Henri Dunant, 94320-Thiais (France); Aymard, Luc [LRCS, UMR CNRS 6007, 33 rue Saint-Leu, 80039-Amiens (France); Bobet, Jean-Louis, E-mail: bobet@icmcb-bordeaux.cnrs.fr [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2013-10-15

    Highlights: •Nanoparticles of Pd were deposed on the binary compound Mg{sub 0.65}Sc{sub 0.35} using the Supercritical Fluid Chemical Deposition (SFCD) method. •Numerous parameters were tested and optimized in order to obtain a homogeneous deposition. •At the first step, Pd@Mg0.65Sc0.35 decomposes into ScH{sub 2} and MgH{sub 2} under hydrogen pressure (1 MPa) at 330 °C. •The mixture, after decomposition absorbs hydrogen reversibly on Mg/MgH{sub 2} couple with good kinetics. -- Abstract: The deposition of Pd nanoparticles on the binary compound Mg{sub 0.65}Sc{sub 0.35} using the Supercritical Fluid Chemical Deposition (SFCD) method was performed. There, the SFCD operating parameters (co-solvent, temperature, CO{sub 2} and hydrogen pressure, reaction time) have been optimized to obtain homogeneous deposition of Pd nanoparticles (around 10 nm). The hydrogenation properties of the optimized Pd@Mg{sub 0.65}Sc{sub 0.35} material were determined and compared to those of Mg{sub 0.65}Sc{sub 0.35}Pd{sub 0.024}. The latter compound forms at 300 °C and 1 MPa of H{sub 2} a hydride that crystallizes in the fluorite structure, absorbs reversibly 1.5 wt.% hydrogen and exhibits fast kinetics. In contrast, Pd@Mg{sub 0.65}Sc{sub 0.35} compound decomposes into ScH{sub 2} and MgH{sub 2} during hydrogen absorption under the same conditions. However, reversible sorption reaches 3.3 wt.% of hydrogen while keeping good kinetics. The possible roles of Pd on the hydrogen-induced alloy decomposition are discussed.

  9. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Highlights: • Carbon nitride films were prepared by using radio frequency plasma enhanced chemical vapour deposition system by altering the electrode distance. • The effect of electrode distance on surface morphology, surface roughness, chemical bonding and hydrophobic behaviour has been studied. • Hydrophobic behaviour were studied by measuring contact angle and calculating surface energy. • CNx nanostructures show super-hydrophobic behaviour. • We report a tunable transition of hydrophilic to super-hydrophobic behaviour of film as electrode distance is reduced. - Abstract: Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films’ structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films’ surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of C=N to C=C and N−H to O−H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films’ characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface

  10. A new sampler for collecting separate dry and wet atmospheric depositions of trace organic chemicals

    Science.gov (United States)

    Waite, Don T.; Cessna, Allan J.; Gurprasad, Narine P.; Banner, James

    Studies conducted in Saskatchewan and elsewhere have demonstrated the atmospheric transport of agricultural pesticides and other organic contaminants and their deposition into aquatic ecosystems. To date these studies have focused on ambient concentrations in the atmosphere and in wet precipitation. To measure the dry deposition of organic chemicals, a new sampler was designed which uses a moving sheet of water to passively trap dry particles and gasses. The moving sheet of water drains into a reservoir and, during recirculation through the sampler, is passed through an XAD-2 resin column which adsorbs the trapped organic contaminants. All surfaces which contact the process water are stainless steel or Teflon. Chemicals collected can be related to airborne materials depositing into aquatic ecosystems. The sampler has received a United States patent (number 5,413,003 - 9 May 1996) with the Canadian patent pending. XAD-2 resin adsorption efficiencies for 10 or 50 μg fortifications of ten pesticides ranged from 76% for atrazine (2-chloro-4-ethylamino-6-isopropylamino- S-triazine) to 110% for triallate [ S-(2,3,3-trichloro-2-phenyl)bis(1-methylethyl)carbamothioate], dicamba (2-methoxy-3,6-dichlorobenzoic acid) and toxaphene (chlorinated camphene mixture). Field testing using duplicate samplers showed good reproducibility and amounts trapped were consistent with those from high volume and bulk pan samplers located on the same site. Average atmospheric dry deposition rates of three chemicals, collected for 5 weeks in May and June, were: dicamba, 69 ng m -2 da -1; 2,4-D (2,4-dichlorophenoxyacetic acid), 276 ng m -2 da -1: and, γ-HCH ( γ-1, 2, 3, 4, 5, 6-hexachlorocyclohexane), 327 ng m -2 da -1.

  11. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  12. Chemical bath deposition of CdSe and CdS nanocrystalline films: tailoring of morphology, optical properties and carrier dynamics

    International Nuclear Information System (INIS)

    We review the results of our research towards tailoring morphology and optical properties of films consisting of closely-spaced nanocrystals of CdSe and CdS whose optical band-gap can be tuned to cover the whole visible spectral range. On basis of the obtained results, in particular of photoexcited carrier dynamics, we have proposed a microscopic model that describes well the optical properties of the films. We have also showed that the spin relaxation of electrons in these nanocrystalline films is different than that in mutually isolated nanocrystals of the same size. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Chemical bath deposition of CdSe and CdS nanocrystalline films: tailoring of morphology, optical properties and carrier dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Nemec, P.; Simurda, M.; Sprinzl, D.; Trojanek, F.; Maly, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Nemec, I.; Nemcova, Y. [Faculty of Science, Charles University in Prague, Albertov 6, 128 43 Prague 2 (Czech Republic); Formanek, P. [Institut fuer Strukturphysik, Technische Universitaet Dresden, Zellescher Weg 16, 01062 Dresden (Germany)

    2008-10-15

    We review the results of our research towards tailoring morphology and optical properties of films consisting of closely-spaced nanocrystals of CdSe and CdS whose optical band-gap can be tuned to cover the whole visible spectral range. On basis of the obtained results, in particular of photoexcited carrier dynamics, we have proposed a microscopic model that describes well the optical properties of the films. We have also showed that the spin relaxation of electrons in these nanocrystalline films is different than that in mutually isolated nanocrystals of the same size. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Lan; ZHAO De-Gang; YANG Hui; LIANG Jun-Wu

    2007-01-01

    A high-Al-content AlCaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire bylow pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity,and twisted mosaicity on the conditions of the AlCaN epilayer deposition is evaluated. An AlCaN epilayer withfavourable surface morphology and crystal quality is deposited on a 20nm low-temperature-deposited AlN buffer at a low Ⅴ/Ⅲ flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.

  15. MBMS studies of gas-phase kinetics in diamond chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fox, C.A. [Stanford Univ., CA (United States); McMaster, M.C. [IBM San Jose, CA (United States); Tung, D.M. [Sandia National Labs., Livermore, CA (United States)] [and others

    1995-03-01

    A molecular beam mass spectrometer system (MBMS) has been used to determine the near-surface gaseous composition involved in the low pressure chemical vapor deposition of diamond. With this system, radical and stable species can be detected with a sensitivity better than 10 ppm. Threshold ionization techniques have been employed to distinguish between radical species in the deposition environment from radical species generated by parent molecule cracking. An extensive calibration procedure was used to enable the quantitative determination of H-atom and CH{sub 3} radical mole fractions. Using the MBMS system, the gaseous composition involved in LPCVD of diamond has been measured for a wide variety of deposition conditions, including hot-filament gas activation, microwave-plasma gas activation, and a variety of precursor feed mixtures (ex: CH{sub 4}/H{sub 2}, C{sub 2}H{sub 2}/H{sub 2}). For microwave-plasma activation (MPCVD), the radical concentrations (H-atom and CH{sub 3} radicals) are independent of the identity of the precursor feed gas provided the input carbon mole fraction is constant. However, in hot-filament diamond deposition (HFCVD), the atomic hydrogen concentration decreased by an order of magnitude as the mole fraction of carbon in the precursor mixture is increased to .07; this sharp reduction has been attributed to filament poisoning of the catalytic tungsten surface via hydrocarbon deposition. Additionally, the authors find that the H-atom concentration is independent of the substrate temperature for both hot-filament and microwave plasma deposition; radial H-atom diffusion is invoked to explain this observation.

  16. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Elen, Ken [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Strategisch Initiatief Materialen (SIM), SoPPoM Program (Belgium); Capon, Boris [Strategisch Initiatief Materialen (SIM), SoPPoM Programm (Belgium); Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); De Dobbelaere, Christopher [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Dewulf, Daan [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Peys, Nick [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Kapeldreef 75, B-3001 Heverlee (Belgium); Detavernier, Christophe [Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); Hardy, An [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium)

    2014-03-31

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum.

  17. YBCO coated conductors prepared by chemical solution deposition: A TEM study

    International Nuclear Information System (INIS)

    Recently large attention has been devoted to chemical solution deposition (CSD) as a promising method for fabricating low-cost YBCO coated conductors. We present an extensive transmission electron microscopy (TEM) cross-section analysis of CSD grown La2Zr2O7 (LZO) buffer layers on flexible Ni-5at%W substrates. The high performance of these chemical solution derived buffer layers was confirmed by a YBCO critical current density Jc of 0.84 MA/cm2 achieved for a coated conductor sample with a layer sequence Ni-5at%W/LZO (CSD)/CeO2 (CSD)/YBCO, where the YBCO film was deposited by pulsed laser deposition (PLD). TEM sample preparation was carried out by conventional mechanical polishing and ion milling techniques. TEM bright-field images of the LZO films and nickel substrates were acquired under two-beam conditions. The layer thicknesses and nanovoid size were determined for the LZO buffer layers. Moreover, the interfaces between the different layers were investigated and identified. Electron diffraction patterns were obtained in order to determine the microscopic texture of the samples. Despite the presence of nanovoids in the LZO buffer layers, they act as efficient Ni diffusion barriers

  18. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    International Nuclear Information System (INIS)

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum

  19. Functional metal oxide coatings by molecule-based thermal and plasma chemical vapor deposition techniques.

    Science.gov (United States)

    Mathur, S; Ruegamer, T; Donia, N; Shen, H

    2008-05-01

    Deposition of thin films through vaccum processes plays an important role in industrial processing of decorative and functional coatings. Many metal oxides have been prepared as thin films using different techniques, however obtaining compositionally uniform phases with a control over grain size and distribution remains an enduring challenge. The difficulties are largely related to complex compositions of functional oxide materials, which makes a control over kinetics of nucleation and growth processes rather difficult to control thus resulting in non-uniform material and inhomogeneous grain size distribution. Application of tailor-made molecular precursors in low pressure or plasma-enhanced chemical vapor deposition (CVD) techniques offers a viable solution for overcoming thermodynamic impediments involved in thin film growth. In this paper molecule-based CVD of functional coatings is demonstrated for iron oxide (Fe2O3, Fe3O4), vanadium oxide (V2O5, VO2) and hafnium oxide (HfO2) phases followed by the characterization of their microstructural, compositional and functional properties which support the advantages of chemical design in simplifying deposition processes and optimizing functional behavior. PMID:18572690

  20. Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Sharma

    2014-01-01

    Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

  1. Nanocomposite Coatings Codeposited with Nanoparticles Using Aerosol-Assisted Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Xianghui Hou

    2013-01-01

    Full Text Available Incorporating nanoscale materials into suitable matrices is an effective route to produce nanocomposites with unique properties for practical applications. Due to the flexibility in precursor atomization and delivery, aerosol-assisted chemical vapour deposition (AACVD process is a promising way to synthesize desired nanocomposite coatings incorporating with preformed nanoscale materials. The presence of nanoscale materials in AACVD process would significantly influence deposition mechanism and thus affect microstructure and properties of the nanocomposites. In the present work, inorganic fullerene-like tungsten disulfide (IF-WS2 has been codeposited with Cr2O3 coatings using AACVD. In order to understand the codeposition process for the nanocomposite coatings, chemical reactions of the precursor and the deposition mechanism have been studied. The correlation between microstructure of the nanocomposite coatings and the codeposition mechanism in the AACVD process has been investigated. The heterogeneous reaction on the surface of IF-WS2 nanoparticles, before reaching the substrate surface, is the key feature of the codeposition in the AACVD process. The agglomeration of nanoparticles in the nanocomposite coatings is also discussed.

  2. Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure

    International Nuclear Information System (INIS)

    Metal-organic chemical vapour deposition (MOCVD) of various phases in PrOx system has been studied in relation with deposition temperature (450-750 deg. C) and oxygen partial pressure (0.027-100 Pa or 0.2-750 mTorr). Depositions were carried out by pulsed liquid injection MOCVD using Pr(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) precursor dissolved in toluene or monoglyme. By varying deposition temperature and oxygen partial pressure amorphous films or various crystalline PrOx phases (Pr2O3, Pr7O12, Pr6O11) and their mixtures can be grown. The pure crystalline Pr2O3 phase grows only in a narrow range of partial oxygen pressure and temperature, while high oxygen pressure (40-100 Pa) always leads to the most stable Pr6O11 phase. The influence of annealing under vacuum at 750 deg. C on film phase composition was also studied. Near 90% step coverage conformity was achieved for PrOx films on structured silicon substrates with aspect ratio 1:10. In air degradation of Pr2O3 films with transformation to Pr(OH)3 was observed in contrast to Pr6O11 films

  3. Photocatalytic Functional Coating of TiO2 Thin Film Deposited by Cyclic Plasma Chemical Vapor Deposition at Atmospheric Pressure

    Science.gov (United States)

    Kwon, Jung-Dae; Rha, Jong-Joo; Nam, Kee-Seok; Park, Jin-Seong

    2011-08-01

    Photocatalytic TiO2 thin films were prepared with titanium tetraisopropoxide (TTIP) using cyclic plasma chemical vapor deposition (CPCVD) at atmospheric pressure. The CPCVD TiO2 films contain carbon-free impurities up to 100 °C and polycrystalline anatase phases up to 200 °C, due to the radicals and ion-bombardments. The CPCVD TiO2 films have high transparency in the visible wavelength region and absorb wavelengths below 400 nm (>3.2 eV). The photocatalytic effects of the CPCVD TiO2 and commercial sprayed TiO2 films were measured by decomposing methylene blue (MB) solution under UV irradiation. The smooth CPCVD TiO2 films showed a relatively lower photocatalytic efficiency, but superior catalyst-recycling efficiency, due to their high adhesion strength on the substrates. This CPCVD technique may provide the means to produce photocatalytic thin films with low cost and high efficiency, which would be a reasonable candidate for practical photocatalytic applications, because of the reliability and stability of their photocatalytic efficiency in a practical environment.

  4. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    Science.gov (United States)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  5. Computational Study of Fluid Flow in a Rotational Chemical Vapor Deposition (CVD) Reactor

    Science.gov (United States)

    Wong, Sun; Jaluria, Yogesh

    2015-11-01

    In a typical Chemical Vapor Deposition (CVD) reactor, the flow of the reacting gases is one of the most important considerations that must be precisely controlled in order to obtain desired film quality. In general, the fluids enter the reactor chamber, travel over to the heated substrate area, where chemical reactions lead to deposition, and then exit the chamber. However, the flow inside the reactor chamber is not that simple. It would often develop recirculation at various locations inside the reactor due to reactor geometry, flow conditions, buoyancy effects from temperature differences and rotational effects cause by the rotating substrate. This recirculation causes hot spots and affects the overall performance of the reactor. A recirculation fluid packet experiences a longer residence time inside the reactor and, thus, it heats up to higher temperatures causing unwanted chemical reactions and decomposition. It decreases the grow rate and uniformity on the substrate. A mathematical and computational model has been developed to help identify these unwanted hot spots occurring inside the CVD reactor. The model can help identify the user parameters needed to reduce the recirculation effects and better control the flow. Flow rates, pressures, rotational speeds and temperatures can all affect the severity of the recirculation within the reactor. The model can also help assist future designs as the geometry plays a big role in controlling fluid flow. The model and the results obtained are discussed in detail.

  6. Preparation of diamond/Cu microchannel heat sink by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    刘学璋; 罗浩; 苏栩; 余志明

    2015-01-01

    A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition (HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray detector (EDX). Results show that the nucleation density is found to be up to 1010 cm−2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.

  7. The Physico-Chemical Conditions for Mobilization of Gold in Mobin Gold Deposit, Southwest Hunan, China

    Institute of Scientific and Technical Information of China (English)

    谷俐; 杨华; 戴塔根; 刘利萍

    2002-01-01

    Experiments on water-rock interaction were carried out on wall-rock samples from the Mobin gold deposit, Southwest Hunan, China, with the aim of determining the optimum physical and chemical conditions for the mobilization of gold in solution. Results indicate that gold is most easily mobilized from the wall rock-tuffaceous slate of the Mobin Deposit. Mobi lization is optimized if fluids are neutral to slightly alkaline and contain both chlorine and sulphur ions at the concentration and composition of about [0.25M (NH4)2S + 1M NaCl]. The amount of gold leached from the tuffaceous slate increases with temperature although the effect decreases above about 200℃ .

  8. MgB{sub 2} thin films by hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xi, X.X. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]. E-mail: xxx4@psu.edu; Pogrebnyakov, A.V. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Zhuang, C.G. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Physics, Peking University, Beijing 100871 (China); Li, Qi [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D.R. [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Y.B.; Tian, W.; Pan, X.Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Cybart, S.A. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Dynes, R.C. [Department of Physics, University of California, Berkeley, CA 94720 (United States)

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB{sub 2} thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB{sub 2} films. The epitaxial pure MgB{sub 2} films grown by HPCVD show higher-than-bulk T {sub c} due to tensile strain in the films. The HPCVD films are the cleanest MgB{sub 2} materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB{sub 2}. The carbon-alloyed HPCVD films demonstrate record-high H {sub c2} values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB{sub 2} Josephson junctions.

  9. Tribological properties of diamond films grown by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Uniform and continuous diamond films have been deposited on Si, Mo, and many other substrates by plasma-enhanced chemical vapor deposition. We have developed processes to enhance the adhesion of diamond films to metal substrates for tribological applications. The tribological properties of the diamond films are found to be significantly different depending on their morphology, grain size, and roughness. However, under all cases tested using a ring-on-block tribotester, it is found that for diamond films with a small grain size of 1--3 μm, the coefficient of friction of the diamond films sliding against a steel ring under lubrication of a jet of mineral oil is about 0.04

  10. Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K., E-mail: JulienKouadio.Dangbegnon@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Talla, K.; Roro, K.T.; Botha, J.R. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-01

    Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

  11. Functional ZnO/polymer core-shell nanowires fabricated by oxidative chemical vapour deposition

    International Nuclear Information System (INIS)

    Functional ZnO-nanowire/polymer core-shell heterostructures were realized using oxidative chemical vapour deposition (oCVD). This dry and versatile technique allows uniform coating of semiconductor nanowires with polymers and simultaneous doping control of the shell. Here, 100 nm thick, p-doped shells of poly(3,4-ethylenedioxythiophene) (PEDOT) were deposited around n-conductive ZnO nanowires. Energy-dispersive x-ray spectroscopy confirms the incorporation of Br dopants into the PEDOT shell, and the resulting p-conductivity of the polymer shell is demonstrated by electrical measurements on nanowire arrays. Photoluminescence spectroscopy points to reactions of Br with the ZnO surface but proves that the nanowires show only little degradation of their optical properties. (paper)

  12. Electron behaviour in CH4/H2 gas mixture in electron-assisted chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Dong Li-Fang; Ma Bo-Qin; Wang Zhi-Jun

    2004-01-01

    The behaviour of electrons in CH4/H2 gas mixture in electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron drift velocity in gas mixture is obtained over a wide range of E/P (the ratio of the electric field to gas pressure) from 1500 to 300000 (V/m kPa-1). The electron energy distribution and average energy under different gas pressure (0.1-20kPa) and CH4 concentration (0.5%-10.0%) are calculated. Their effects on the diamond growth are also discussed. It is believed that these results will be helpful to the selection of optimum experimental conditions for high quality diamond film deposition.

  13. Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

    International Nuclear Information System (INIS)

    Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

  14. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shengnan, E-mail: wang.shengnan@lab.ntt.co.jp; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

    2013-12-16

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11} cm{sup −2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

  15. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    International Nuclear Information System (INIS)

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO2 of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO2 are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO2 substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 1011 cm−2. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups

  16. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    Science.gov (United States)

    Wang, Shengnan; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki

    2013-12-01

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO2 of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO2 are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO2 substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 1011 cm-2. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

  17. Formation of high T/sub c/ superconducting films by organometallic chemical vapor deposition

    International Nuclear Information System (INIS)

    The first growth of superconducting YBaCuO films by organometallic chemical vapor deposition is described. Metal β-diketonates were decomposed thermally on MgO substrates in an oxygen-rich atmosphere to produce amorphous brown films. Subsequent annealing in oxygen yielded dull gray films whose thickness corresponded to deposition rates of approximately 8 nm min-1. These films showed semiconductor-like behavior at higher temperatures, followed by a broad resistive transition from 80 to 36 K with the resistance becoming zero at ∼20 K. Analysis of x-ray data indicated the presence of the orthorhombic superconducting phase and various other metal oxides. Profilometer measurements yielded film thicknesses up to 950 nm, and scanning electron microscopy revealed faceted grains from 0.5 to 1.0 μm in size

  18. Technical Challenges and Progress in Fluidized Bed Chemical Vapor Deposition of Polysilicon

    Institute of Scientific and Technical Information of China (English)

    李建隆; 陈光辉; 张攀; 王伟文; 段继海

    2011-01-01

    Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition (FBCVD) method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor.

  19. Growth of well-oriented VACNTs using thermal chemical vapor deposition method

    Science.gov (United States)

    Yousefi, Amin Termeh; Mahmood, Mohamad Rusop; Ikeda, Shoichiro

    2016-07-01

    The remarkable properties of carbon nanotubes (CNTs) make them attractive for biosensor applications, especially for medical detecting devices. In this paper, we describe a process to grow high oriented ratio CNT arrays to improve the electrical properties of the devices based on CNTs. Chemical vapor deposition (CVD) was used to grow highly oriented CNT using camphor as the carbon source, and argon and hydrogen as carrier gases to grow perpendicular CNTs on the surface of the silicon substrate in presence of ferrocene as a metallic catalyst. Images were revealed by FESEM indicates that the formation mechanism of oriented CNTs with high morphological purity nanotubes, which is depends significantly on deposition time and applied temperature to the furnaces. This method might be an effective method to produce oriented MWCNT in different length.

  20. Chemical solution deposition of YBCO thin film by different polymer additives

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.T.; Li, G.; Pu, M.H.; Sun, R.P.; Zhou, H.M.; Zhang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Yang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)], E-mail: yzhao@swjtu.edu.cn

    2008-09-15

    A polymer-assisted chemical solution deposition approach has been proposed for the preparation of YBCO thin film. Different additives like PVB (polyvinyl butyral), PEG (polyethylene glycol) and PVP (polyvinylpyrrolidone) have been used to adjust the final viscosity of the precursor solution and thus the film formation. In this fluorine-free approach, YBCO has been deposited on single crystal substrates with metal acetates being starting materials. Biaxially textured YBCO thin films have been obtained. However, different additives lead to different microstructure. Dense, smooth and crack-free YBCO film prepared with PVB as additive yields sharp superconducting transition around T{sub c} = 90 K as well as high J{sub c} (0 T, 77 K) over 3 MA/cm{sup 2}.

  1. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

    Science.gov (United States)

    Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

    2016-01-01

    Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

  2. Electrochemical metal speciation analysis of chemically heterogeneous samples: the outstanding features of stripping chronopotentiometry at scanned deposition potential

    NARCIS (Netherlands)

    Leeuwen, van H.P.; Town, R.M.

    2003-01-01

    The application of depletive stripping chronopotentiometry at scanned deposition potential (SSCP) to metal ion speciation analysis of chemically heterogeneous complex systems is described. In this electroanalytical stripping technique, metal which is accumulated in the electrode during the depositio

  3. Chemical treatment of deposits of junctions 'collector-tube' of horizontal steam generators

    International Nuclear Information System (INIS)

    A method of chemical treatment of deposits of junctions 'collector - tube' of horizontal steam generators of NPP with reactor VVER has been developed at the department of NPP of the Moscow Power Engineering Institute (Russia). The underexpanding zones of heat-exchanger tubes (HET) in the collector casing, forming fricative gaps with mass-transfer decrease plays a special role in corrosion damage of steam generator collectors. Moreover, if they are filled with porous deposit, then it can become an ideal place of potential concentration of aggressive impurity in the least thermal loading zone: just an accumulation of slime takes place in this zone most intensively. At present, there are series of methods for treating the deposits and for fighting against their formulation. One of the most effective widely used treatment methods is the chemical dissolution. Morpholine or Trilon-B can be used as reagents. The artificially created protective film of ceramic structures made of lithium ferrite on the surfaces of HETs reduces the corrosion-fatigue cracking process rate in the water with the parameters of the second contour. The stability of this film towards dissolution in contact with morpholine was experimentally tested and also a sufficiently durational presence of the film on the pipes' surfaces HETs and ring cracks has been verified by a repeated test. For reinforcing the protective effect, it is needed to maintain the film uniformity in the working process (microdosage of lithium hydroxide-LiOH). On the surface oxidized or polluted with deposits, first of all the LiOH is utilized for interaction with magnetite, then a formation of a coating of a mixed structure of lithium ferrite plus magnetite takes place. Since the combination of magnetite and lithium ferrite is insoluble in water then there is also no transfer of corrosion products in water from the protected surface. This circumstance strongly slows down the deposit formation process. Thus, iron-oxide deposits in

  4. Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

    Science.gov (United States)

    Shinoda, Nao; Itokawa, Hiroshi; Fujitsuka, Ryota; Sekine, Katsuyuki; Onoue, Seiji; Tonotani, Junichi

    2016-04-01

    The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N-Si3, N-Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules and H in the SiO2 film with subsequent oxide deposition using O3 as an oxidant. The capacitance-voltage (C-V) curves of metal-oxide-semiconductor (MOS) capacitors are obtained. The negative shift of the C-V curve is caused by the increase in the density of positive fix charge traps in CVD-SiO2 induced by plasma nitridation. The C-V curve of plasma-nitrided SiO2 subjected to annealing shifts to the positive direction and that subjected to the subsequent oxide deposition shifts markedly to the negative direction. It is clarified that the density of positive charge fixed traps in plasma-nitrided SiO2 films decrease because the amount of N2 molecules is decreased by annealing, and that the density of traps increases because NH species are generated and move to the interface between SiO2 and the Si substrate with the subsequent oxide deposition.

  5. Microreactor-Assisted Solution Deposition for Compound Semiconductor Thin Films

    Directory of Open Access Journals (Sweden)

    Chang-Ho Choi

    2014-05-01

    Full Text Available State-of-the-art techniques for the fabrication of compound semiconductors are mostly vacuum-based physical vapor or chemical vapor deposition processes. These vacuum-based techniques typically operate at high temperatures and normally require higher capital costs. Solution-based techniques offer opportunities to fabricate compound semiconductors at lower temperatures and lower capital costs. Among many solution-based deposition processes, chemical bath deposition is an attractive technique for depositing semiconductor films, owing to its low temperature, low cost and large area deposition capability. Chemical bath deposition processes are mainly performed using batch reactors, where all reactants are fed into the reactor simultaneously and products are removed after the processing is finished. Consequently, reaction selectivity is difficult, which can lead to unwanted secondary reactions. Microreactor-assisted solution deposition processes can overcome this limitation by producing short-life molecular intermediates used for heterogeneous thin film synthesis and quenching the reaction prior to homogeneous reactions. In this paper, we present progress in the synthesis and deposition of semiconductor thin films with a focus on CdS using microreactor-assisted solution deposition and provide an overview of its prospect for scale-up.

  6. Experimentation and simulation of tin oxide deposition on glass based on the SnCl4 hydrolysis in an in-line atmospheric pressure chemical vapor deposition reactor

    International Nuclear Information System (INIS)

    Tin oxide thin films were deposited on glass substrates in an in-line atmospheric pressure chemical vapor deposition reactor under various conditions, which were numerically simulated using a commercial package. A soda-lime glass sheet was used as a deposition substrate, and SnCl4 and H2O in gas phase were separately supplied as the precursor and the oxidizer, respectively. By assuming that the main chemical reactions followed the Rideal–Eley mechanism, the experimentally determined deposition rates were fitted to obtain the reaction factors needed to describe the deposition process. The role of barrier gas injection for minimizing unwanted surface reaction or particle generation inside of the reactor, and not on the target (glass backplane itself) has been elucidated. Furthermore, the optimal operating conditions for the deposition on glass with the additives such as CH3OH and HF have been investigated. - Highlights: • Tin oxide deposition on glass based on the SnCl4 hydrolysis in an in-line reactor • Simulations using Rideal–Eley mechanism were compared to experimental observations. • Results: activation energy—79.3 kJ/mol and frequency factor—1.93 × 1010 m4/kmol·s • Influences of additives on transmittances, hazes, and electrical resistivities

  7. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    Crystalline silicon surface passivation by amorphous silicon deposited by three different chemical vapor deposition (CVD) techniques at low (T ∼ 130 °C) temperatures is compared. For all three techniques, surface recombination velocities (SRVs) are reduced by two orders of magnitude after prolonged

  8. Scalable route to CH3NH3PbI3 perovskite thin films by aerosol assisted chemical vapour deposition

    OpenAIRE

    Bhachu, D. S.; Scanlon, D. O.; Saban, E. J.; Bronstein, H.; Parkin, I. P.; Carmalt, C. J.; Palgrave, R. G.

    2015-01-01

    Methyl-ammonium lead iodide is the archetypal perovskite solar cell material. Phase pure, compositionally uniform methyl-ammonium lead iodide thin films on large glass substrates were deposited using ambient pressure aerosol assisted chemical vapour deposition. This opens up a route to efficient scale up of hybrid perovskite film growth towards industrial deployment.

  9. Corrosion resistant coatings (Al2O3) produced by metal organic chemical vapour deposition using aluminium-tri-sec-butoxide

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1993-01-01

    The metal organic chemical vapour deposition (MOCVD) of amorphous alumina films on steel was performed in nitrogen at atmospheric pressure. This MOCVD process is based on the thermal decomposition of aluminium-tri-sec-butoxide (ATSB). The effect of the deposition temperature (within the range 290–42

  10. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    International Nuclear Information System (INIS)

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb2(OEt)10 does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt)5 acts as an octahedral field completing entity and leads to Nb(OEt)4(dmae). We show that Nb(OEt)4(dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h−1 to values larger than 400 nm·h−1 can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt)4(dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt)4(dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an atomic layer deposition (ALD) process indicating that HV

  11. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dabirian, Ali [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Kuzminykh, Yury, E-mail: yury.kuzminykh@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Wagner, Estelle; Benvenuti, Giacomo [3D-Oxides, 70 Rue G. Eiffel Technoparc, 01630 St Genis Pouilly (France); ABCD Technology, 12 route de Champ-Colin, 1260 Nyon (Switzerland); Rushworth, Simon [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork (Ireland); Hoffmann, Patrik, E-mail: patrik.hoffmann@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland)

    2014-11-28

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb{sub 2}(OEt){sub 10} does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt){sub 5} acts as an octahedral field completing entity and leads to Nb(OEt){sub 4}(dmae). We show that Nb(OEt){sub 4}(dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h{sup −1} to values larger than 400 nm·h{sup −1} can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt){sub 4}(dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt){sub 4}(dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an

  12. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    Science.gov (United States)

    Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  13. Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

    KAUST Repository

    Qaisi, Ramy M.

    2013-04-01

    Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.

  14. Growth of straight carbon nanotubes by simple thermal chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    ZOU Xiao-ping; H. ABE; T. SHIMIZU; A. ANDO; H. TOKUMOTO; ZHU Shen-ming; ZHOU Hao-shen

    2006-01-01

    Straight carbon nanotubes (CNTs) were achieved by simple thermal chemical vapor deposition(STCVD) catalyzed by Mo-Fe alloy catalyst on silica supporting substrate at 700 ℃. High-resolution transmission electron microscopy images show that the straight CNTs are well graphitized with no attached amorphous carbon. Mo-Fe alloy catalyst particles play a very crucial role in the growth of straight CNTs. The straight carbon nanotubes contain much less defects than the curved nanotubes and might have potential applications for nanoelectrical devices in the future. The simple synthesis of straight CNTs may have benefit for large-scale productions.

  15. An Investigation on the Formation of Carbon Nanotubes by Two-Stage Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. S. Shamsudin

    2012-01-01

    Full Text Available High density of carbon nanotubes (CNTs has been synthesized from agricultural hydrocarbon: camphor oil using a one-hour synthesis time and a titanium dioxide sol gel catalyst. The pyrolysis temperature is studied in the range of 700–900°C at increments of 50°C. The synthesis process is done using a custom-made two-stage catalytic chemical vapor deposition apparatus. The CNT characteristics are investigated by field emission scanning electron microscopy and micro-Raman spectroscopy. The experimental results showed that structural properties of CNT are highly dependent on pyrolysis temperature changes.

  16. Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom. The characterization results by the scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy indicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 -m, and the carbon nanotubes are mainly restrained within the channels of templates.

  17. Electro-chemical deposition of zinc oxide nanostructures by using two electrodes

    Directory of Open Access Journals (Sweden)

    B. A. Taleatu

    2011-09-01

    Full Text Available One of the most viable ways to grow nanostructures is electro deposition. However, most electrodeposited samples are obtained by three-electrode electrochemical cell. We successfully use a much simpler two-electrode cell to grow different ZnO nanostructures from common chemical reagents. Concentration, pH of the electrolytes and growth parameters like potentials at the electrodes, are tailored to allow fast growth without complexity. Morphology and surface roughness are investigated by Scanning Electron and Air Force Microscopy (SEM and AFM respectively, crystal structure by X-Ray Diffraction measurements (XRD and ZnO stoichiometry by core level photoemission spectroscopy (XPS.

  18. Magnetic property and recording performance of chemical deposition CoP thin films

    Institute of Scientific and Technical Information of China (English)

    2012-01-01

    The thickness of CoP thin films prepared by wet chemical deposition is of crucial importance on magnetic property and recording perform-ance. The coercivity of CoP films decreased with increasing film thickness. The coercivity was 45.37 kA m 1 at the thickness of 300 nm, and decreased to 21.65 kA m 1 at 5.7 μm. Recording performance tests indicate that, for drums with the same size, different recorded magnetic pole density have different thickness requirements. For 40 mm diameter magnetic drum, the optimal ...

  19. Atmospheric pressure chemical vapor deposition of CdTe—reactor design considerations

    Science.gov (United States)

    Meyers, Peter V.; Kee, Robert J.; Raja, Laxminarayan; Wolden, Colin A.; Aire, Michael

    1999-03-01

    Atmospheric Pressure Chemical Vapor Deposition (APCVD) of polycrystalline thin-film CdTe appears to offer several practical advantages over state-of-the-art manufacturing techniques. APCVD employs the same reaction chemistry utilized to produce 16% efficient CdTe cells (i.e., same reaction chemistry as Close Spaced Sublimation), avoids use of vacuum equipment, allows for physical separation of the source and substrate, and employs forced convection to ensure uniform delivery of source material over large-area substrates. Reactor design considerations and preliminary numerical simulations of mass transport are presented.

  20. Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

    Science.gov (United States)

    Shen, Tian; Wu, Wei; Yu, Qingkai; Richter, Curt; Elmquist, Randolph; Newell, David; Chen, Yong

    2012-02-01

    We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm by 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO2/Si substrates, with typical carrier mobilities 4000 cm^2/Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.